CN107765481A - Manufacturing method of panel and array substrate - Google Patents
Manufacturing method of panel and array substrate Download PDFInfo
- Publication number
- CN107765481A CN107765481A CN201711132897.3A CN201711132897A CN107765481A CN 107765481 A CN107765481 A CN 107765481A CN 201711132897 A CN201711132897 A CN 201711132897A CN 107765481 A CN107765481 A CN 107765481A
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- base palte
- array base
- slit
- polarisation pattern
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 title abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 61
- 230000003287 optical effect Effects 0.000 claims abstract 2
- 239000011159 matrix material Substances 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 37
- 239000004973 liquid crystal related substance Substances 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 2
- 230000010287 polarization Effects 0.000 abstract 3
- 230000004888 barrier function Effects 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 230000007812 deficiency Effects 0.000 description 8
- 238000009413 insulation Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000003854 Surface Print Methods 0.000 description 1
- FYQBHPUWNUUKIH-UHFFFAOYSA-N [Zn].[In].[Ge] Chemical compound [Zn].[In].[Ge] FYQBHPUWNUUKIH-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/13378—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation
- G02F1/133788—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation by light irradiation, e.g. linearly polarised light photo-polymerisation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
Abstract
A method of manufacturing a panel includes the steps of: providing an array substrate including a polarization pattern; forming an alignment material layer on the array substrate; providing a light source module, wherein the polarization pattern is located between the light source module and the alignment material layer, and the light rays emitted by the light source module pass through the polarization pattern to perform optical alignment on the alignment material layer. The invention provides an array substrate.
Description
Technical field
The invention relates to a kind of manufacture method of panel, and in particular to a kind of face for being related to light alignment technique
Plate and array base palte.
Background technology
In order to which the liquid crystal molecule in display panel to be made arranges along predetermined direction, generally require in manufacture display panel
During carry out orientation handling process.In orientation handling process, the orientation of brushing formula easily causes micronic dust, unbalanced stress etc.
Problems, therefore, light allocating process are another selections.In light allocating process, matching somebody with somebody on light irradiation substrate is utilized
To material layer, make the alignment materials layer on predetermined direction that chemical reaction occur and produce orientation, therefore, the liquid crystal being subsequently stuffed into point
Son can arrange along predetermined direction.
In current light alignment technique, it is necessary to using the polaroid on light orientation board come emitted by polarized light source module
Light, but because there is a segment distance between light orientation board and motherboard, therefore light orientation path is led there may be a little error
Orientation effect is caused not to be inconsistent expection, either, if light orientation board has used spliced polaroid, because the product light of stitching portion
Amount is often insufficient, and may cause discontinuous orientation flaw occur between the region of different time orientation.
The content of the invention
At least embodiment of the present invention provides a kind of manufacture method of panel, can solve in light alignment technique, part
There is the problem of product deficiency in light quantity in region.
At least embodiment of the present invention provides a kind of array base palte, can solve in light alignment technique, array base palte exists
There is the problem of orientation flaw in subregion.
At least embodiment of the present invention provides a kind of manufacture method of panel and comprised the following steps：Offer includes polarisation figure
The array base palte of case；Alignment materials layer is formed on array base palte；Light source module is provided, wherein polarisation pattern is located at light source module
Between alignment materials layer, the light that light source module projects is through polarisation pattern with to the progress light orientation of alignment materials layer.
At least embodiment of the present invention provides a kind of array base palte, including multi-strip scanning line, a plurality of data lines, Duo Gezhu
Dynamic element, multiple first electrodes and lower polarisation pattern.Multiple active members respectively with scan line and data line electrical connection.It is lower inclined
Light pattern overlaps with first electrode, and lower polarisation pattern has multiple parallel lower polarisation slits.One in scan line has
Scan line slit, and overlapped with lower polarisation pattern；And/or one in data wire has a data wire slit, and with lower polarisation figure
Case changes.
At least embodiment of the present invention provides a kind of array base palte, including black matrix" and upper polarisation pattern.Black
Matrix includes multiple first slits.Upper polarisation pattern includes multiple upper polarisation slits, and the of upper polarisation pattern and black matrix"
One slit overlaps.
The one of the purpose of the present invention is that need not set polaroid on light orientation board.
The one of the purpose of the present invention is to solve the problems, such as that panel occurs orientation flaw in subregion.
The one of the purpose of the present invention is to make can have preferable orientation quality around scan line and/or data wire.
The one of the purpose of the present invention is to make can have preferable orientation quality around black matrix".
For features described above of the invention and advantage can be become apparent, special embodiment below, and coordinate institute's accompanying drawings
It is described in detail below.
Brief description of the drawings
Figure 1A is the upper schematic diagram of the array base palte according to one embodiment of the invention.
Figure 1B is the diagrammatic cross-section in the Partial Perimeter area of Figure 1A Vertical Centre Lines AA ' and array base palte.
Fig. 2 is the diagrammatic cross-section of the array base palte according to one embodiment of the invention.
Fig. 3 is the diagrammatic cross-section of the array base palte according to one embodiment of the invention.
Fig. 4 is the upper schematic diagram of the array base palte according to one embodiment of the invention.
Fig. 5 A are the upper schematic diagrams of the array base palte according to one embodiment of the invention.
Fig. 5 B are Fig. 5 A Vertical Centre Lines BB ' diagrammatic cross-sections.
Fig. 6 is the diagrammatic cross-section of the array base palte according to one embodiment of the invention.
Fig. 7 is a kind of diagrammatic cross-section of panel according to one embodiment of the invention.
Wherein, reference：10、20、30、40、50：Array base palte
150、250：Alignment materials layer
100：Shielding layer
105、125、135、137、215：Insulating barrier
110：Semiconductor layer
115：Gate insulation layer
120：Grid
120O、130O、140O、P1O、P2O、200OA、200OB：Slit
132：Source electrode
134：Drain electrode
140A、140B：Electrode
200A、200B：Block
210：Color filter element
A1、A2、A3、A4、W1、W2、W3、W4、W5、W6：Width
B1、B2：Substrate
BM：Black matrix"
BR：Peripheral region
CL：Common line
D1、D2：Direction
DL：Data wire
LC：Liquid crystal molecule
O1、O2、O3、O4：Opening
P、PL、PU：Polarisation pattern
PR：Pixel region
P1、P2：Fine rule
S：Sealing
SL：Scan line
TFT：Active member
UV：Light
Embodiment
This paper schematic diagram is only the embodiment for illustrating part of the present invention.Therefore, each member shown in schematic diagram
Shape, quantity and the scale of part should not be taken as limiting the present invention.For example, the reality of the polarisation pattern in schematic diagram
Quantity, size and shape be intended merely to, as signal, not represent the actual quantity of the polarisation pattern of the present invention, size and
Shape must be as shown in FIG..
Figure 1A is the upper schematic diagram of the array base palte 10 according to one embodiment of the invention.Figure 1B is Figure 1A Vertical Centre Lines
The diagrammatic cross-section in the Partial Perimeter area of AA ' and array base palte.
It please also refer to Figure 1A and Figure 1B, array base palte 10 includes substrate B1, shielding layer 100, multi-strip scanning line SL, a plurality of
Data wire DL, multiple active member TFT, multiple first electrode 140A, multiple second electrode 140B and lower polarisation pattern P L.
In the present embodiment, array base palte 10 is, for example, active component array base board.
Shielding layer 100 is formed on substrate B1.In one embodiment, substrate B1 material can be glass, quartz, You Jiju
Compound or other can be with the material of printing opacity.In one embodiment, the material of shielding layer 100 can be metal, it is alloy, oxide, black
Chromoresin or the low material of other light transmittances.In the present embodiment, lower polarisation pattern P L is all formed at substrate B1 with shielding layer 100
On, and contacted with substrate B1.In one embodiment, lower polarisation pattern P L is for example simultaneously formed with shielding layer 100, and formation side
Method is, for example, nano-imprint process or exposure etch process.In one embodiment, lower polarisation pattern P L for example including it is a plurality of each other
Parallel fine rule P1, and these fine rules P1 line width is about between 25 nanometers and 125 nanometers.In one embodiment, lower polarisation figure
Case PL can have multiple parallel lower polarisation slit P1O, and these lower polarisation slit P1O width W1 is about between 15nm and 120nm
Between.In the present embodiment, the fine rule P1 on substrate B1 is all parallel to each other, and extends toward with a direction, but the present invention is not with this
It is limited.In certain embodiments, multiple pixel region PR with different designs each other, corresponding different pixels region PR it is lower partially
Fine rule P1 in light pattern PL can have different bearing of trends.
Active member TFT is formed on shielding layer 100.In one embodiment, between active member TFT and shielding layer 100
Accompany insulating barrier 105.Active member TFT includes semiconductor layer 110, gate insulation layer 115, grid 120, source electrode 132 and drain electrode
134.Semiconductor layer 110 is formed on insulating barrier 105.Semiconductor layer 110 is single or multiple lift structure, and it includes non-crystalline silicon, more
Crystal silicon, microcrystal silicon, monocrystalline silicon, organic semiconducting materials, oxide semiconductor material (such as：Indium-zinc oxide, the oxidation of indium germanium zinc
Thing or other suitable materials or combinations of the above) or other suitable materials or containing dopant (dopant) in upper
State in material or combinations of the above.Gate insulation layer 115 is formed on semiconductor layer 110 and insulating barrier 105.Grid 120 is formed
In on gate insulation layer 115, and gate insulation layer 115 is folded in semiconductor layer 110 between gate pole 120, grid 120 and scan line
SL is electrically connected with.Source electrode 132 is formed on semiconductor layer 110 with drain electrode 134, and is electrically connected with semiconductor layer 110.It is real one
Apply in example, insulating barrier 125 be formed at grid 120 with door insulating barrier 115, source electrode 132 134 is respectively filled in insulating barrier with drain electrode
Opening O1 in 125 is electrically connected with opening O2 and with semiconductor layer 110.Source electrode 132 and data wire DL is electrically connected with.
In the present embodiment, active member TFT is, for example, to utilize low-temperature polysilicon silicon technology LTPS (Low Temperature
Poly-silicon) make, but the present invention is not limited.The present invention can also use the active member TFT of other patterns
Or other manufacture active members TFT method.
In the present embodiment, scan line SL has a scan line slit 120O, and scan line SL scan line slit 120O with
Partial fine rule P1 overlaps.In the present embodiment, it is, for example, that there are multiple scan line slit 120O on every scan line SL, each
The corresponding pixel region PR of scan line slit 120O, but the present invention is not limited.It is in other embodiments, it can be more
A corresponding pixel region PR or scan line slit 120O of individual scan line slit 120O corresponds to multiple pixel regions
PR.In the present embodiment, bearing of trend of the scan line slit 120O bearing of trend substantially parallel to corresponding scan line SL
D2.In one embodiment, scan line SL width A1 is for example between 1 micron and 6 microns, scan line slit 120O width
W2 is for example between 0.2 micron and 0.6 micron.In one embodiment, scan line slit 120O width W2 is essentially pair
The 1% to 50% of the scan line SL answered width A1.Scan line slit 120O width W2 and scan line SL width A1 amount
It is identical to survey direction, is e.g. measured on vertical scan line SL bearing of trend D2 direction.
In the present embodiment, data wire DL has a data wire slit 130O, and data wire DL data wire slit 130O with
Partial fine rule P1 overlaps.In the present embodiment, per data line DL for example with multiple data wire slit 130O, each data
The corresponding pixel region PR of line slit 130O, but the present invention is not limited.In other embodiments, it can be more numbers
Multiple pixel region PR are corresponded to according to a corresponding pixel region PR or data wire slit 130O of line slit 130O.
In the present embodiment, bearing of trend D1 of the data wire slit 130O bearing of trend substantially parallel to corresponding data wire DL.
In one embodiment, data wire DL width A2 is for example between 1 micron and 6 microns, data wire slit 130O width W3
Such as between 0.2 micron and 0.6 micron.In one embodiment, data wire slit 130O width W3 is essentially corresponding
Data wire DL width A2 1% to 50%.Data wire slit 130O width W2 and data wire DL width A2 measurement
Direction is identical, is e.g. measured on vertical data line DL bearing of trend D1 direction.In one embodiment, data wire DL is in
Zigzag (zigzag), for example, the data wire DL of above and below each scan line SL both sides bearing of trend has angle, phase
Data wire DL corresponding to the pixel region PR of adjacent column has different bearing of trends, but the present invention is not limited.At some
In embodiment, data wire DL only has a bearing of trend, and bearing of trend D1 citings system is perpendicular to bearing of trend D2.
In the present embodiment, first electrode 140A is pixel electrode, and first electrode 140A is located in pixel region PR, and electricity
Property is connected to active member TFT drain electrode 134.In one embodiment, insulating barrier 135 is formed at source electrode 132 and drain electrode 134
On, and insulating barrier 135 has opening O3.First electrode 140A inserts opening O3 and is electrically connected with drain electrode 134.First electrode
140A and part fine rule P1 overlaps.First electrode 140A has multiple electrodes slit 140O.In the present embodiment, electrode narrow slit
140O bearing of trend is parallel to corresponding data wire DL bearing of trend D1, but the present invention is not limited.In other implementations
In example, there is angle between electrode narrow slit 140O bearing of trend and data wire DL bearing of trend D1.In one embodiment, it is electric
Pole slit 140O can have another bearing of trend different from bearing of trend D1 in the opening position close to scan line SL, and by
Electrode narrow slit 140O designs another bearing of trend close to scan line SL opening position can further help the orientation of liquid crystal.It is real one
Apply in example, lower polarisation slit P1O and corresponding electrode narrow slit 140O angle is between -15 degree and 15 degree or 75 degree and 105
Between degree.
In the present embodiment, array base palte 10 includes multiple second electrode 140B (omit and illustrate in Figure 1A).Second electrode
140B is overlapped in first electrode 140A, and insulating barrier 137 is accompanied between first electrode 140A.Second electrode 140B corresponding to
Opening O3 opening position has opening O4, and therefore, first electrode 140A will not contact with second electrode 140B.In the present embodiment
In, second electrode 140B is common electrode, and second electrode 140B is electrically connected at common line CL in peripheral region BR.Common line CL
Such as belong to same film layer with data wire DL, i.e., formed by same material pattern layers.In the present embodiment, first electrode 140A
Positioned at second electrode 140B top, but the present invention is not limited.In other embodiments, first electrode 140A is located at second
Electrode 140B lower section.
Form lower alignment materials layer 150, lower alignment materials layer 150 for example cover first electrode 140A, second electrode 140B,
Active member TFT and lower polarisation pattern P L.Lower alignment materials layer 150 is for example above lower polarisation pattern P L.Implement one
In example, the method for lower alignment materials layer 150 is formed for example including method of spin coating, the printing of male female plate or ink jet printing.It is real one
Apply in example, lower alignment materials layer 150 is for example including polyimides or other suitable high polymer materials.
Light source module (not illustrating) is provided, and lower polarisation pattern P L is located between light source module and lower alignment materials layer 150.
Light source module can for example project unpolarized light UV, and light UV is for example including ultraviolet light.In the present embodiment, light UV by
Under up irradiate, such as from substrate B1 side enter array base palte 10 inside.Light UV turns after passing through lower polarisation pattern P L
It is changed into polarised light, light orientation then is carried out to lower alignment materials layer 150, lower alignment materials layer 150 is changed into both alignment layers and (does not mark
Show).
The light UV that the present embodiment is sent using the lower polarisation pattern P L of array base palte 10 itself come polarized light source module,
Therefore polaroid can need not be set on light orientation board.Accordingly, it is capable to solve the problems, such as occur product deficiency in light quantity in subregion.
In the present embodiment, scan line SL and data wire DL all belongs to different film layers, and part of scanning line SL from lower polarisation pattern P L
And segment data line DL can overlap with fine rule P1.Therefore, scan line SL can be irradiated to through lower polarisation pattern P L light UV
And data wire DL.Due to scan line SL with scan line slit 120O and data wire DL is with data wire slit 130O.Therefore,
The light UV that light source module is sent can pass through scan line slit 120O and data wire slit 130O, make to be overlapped in scan line SL
And data wire DL lower alignment materials layer 150 can also improve scan line SL and data wire DL weeks by light UV to being irradiated to
The orientation quality enclosed.
Fig. 2 is the diagrammatic cross-section of the array base palte 20 according to one embodiment of the invention.It should be noted that, scheme herein
2 embodiment continues to use the element numbers and partial content of Figure 1A, Figure 1B embodiment, wherein using identical or approximate label come
Identical or approximate element is represented, and eliminates the explanation of constructed content.Before explanation on clipped refers to
Embodiment is stated, it is no longer repeated for following embodiments.
Fig. 2 is refer to, in the present embodiment, lower polarisation pattern P L is configured at substrate B1 outside.In other words, this implementation
Lower polarisation pattern P L and shielding layer 100 in example are located at the relative both sides of substrate B1, and lower polarisation pattern P L and shielding layer respectively
100 not form in a technique.
The array base palte 20 of the present embodiment includes lower polarisation pattern P L, utilizes the lower polarisation pattern P L of array base palte 20 itself
Carry out the light UV that polarized light source module is sent, it is not necessary to which polaroid is set on light orientation board.Accordingly, it is capable to solve in part
There is the problem of product deficiency in light quantity in region.In the present embodiment, scan line SL and data wire DL all belongs to lower polarisation pattern P L
In different film layers, and part of scanning line SL and segment data line DL can overlap with fine rule P1.Therefore, through lower polarisation pattern P L
Light UV can be irradiated to scan line SL and data wire DL.Because scan line SL has scan line slit 120O and data wire DL
With data wire slit 130O.Therefore, the light UV that light source module is sent can pass through scan line slit 120O and data wire
Slit 130O, the lower alignment materials layer 150 for being overlapped in scan line SL and data wire DL is set to be carried by light UV to being irradiated to
The orientation quality around scan line SL and data wire DL is risen.
Fig. 3 is the diagrammatic cross-section of the array base palte 30 according to one embodiment of the invention.It should be noted that, scheme herein
3 embodiment continues to use the element numbers and partial content of Figure 1A, Figure 1B embodiment, wherein using identical or approximate label come
Identical or approximate element is represented, and eliminates the explanation of constructed content.Before explanation on clipped refers to
Embodiment is stated, it is no longer repeated for following embodiments.
Fig. 3 is refer to, in the present embodiment, lower polarisation pattern P L and scan line SL with gate pole 120 to belong to a film layer.
In one embodiment, lower polarisation pattern P L and scan line SL is to be, for example, to be formed in a technique with gate pole 120, and formation side
Method is, for example, nano-imprint process or exposure etch process.In the present embodiment, due to the light UV through lower polarisation pattern P L
Scan line SL is not passed through, therefore, slit can be set on scan line SL without extra.
The array base palte 30 of the present embodiment includes lower polarisation pattern P L, utilizes the lower polarisation pattern P L of array base palte 30 itself
Carry out the light UV that polarized light source module is sent, it may be unnecessary to which polaroid is set on light orientation board.Accordingly, it is capable to solve in portion
There is the problem of product deficiency in light quantity in subregion.In the present embodiment, data wire DL belongs to different film layers from lower polarisation pattern P L, and
Part segment data line DL can overlap with fine rule P1.Therefore, data wire DL can be irradiated to through lower polarisation pattern P L light UV.
Because data wire DL has data wire slit 130O.Therefore, the light UV that light source module is sent can pass through data wire slit
130O, the lower alignment materials layer 150 for being overlapped in data wire DL is set to improve data wire DL weeks by light UV to being irradiated to
The orientation quality enclosed.
Fig. 4 is the upper schematic diagram of the array base palte 40 according to one embodiment of the invention.It should be noted that, scheme herein
4 embodiment continues to use the element numbers and partial content of Figure 1A, Figure 1B embodiment, wherein using identical or approximate label come
Identical or approximate element is represented, and eliminates the explanation of constructed content.Before explanation on clipped refers to
Embodiment is stated, it is no longer repeated for following embodiments.
Fig. 4 is refer to, in the present embodiment, there is a data wire slit 130O per data line DL, and data wire is narrow
Seam 130O bearing of trend is data wire DL bearing of trend D1.In one embodiment, data wire slit 130O can for example be passed through
Wear source electrode 132.In the present embodiment, every scan line SL has a scan line slit 120O, and scan line slit 120O
Bearing of trend is scan line SL bearing of trend D2.In one embodiment, scan line slit 120O can for example run through grid
120.Because the scan line slit 120O in the present embodiment and the area occupied by data wire slit 130O are larger therefore more
Light UV can through scan line SL and data wire DL slit and to lower alignment materials layer 150 carry out light orientation.
The array base palte 40 of the present embodiment includes lower polarisation pattern P L, utilizes the lower polarisation pattern P L of array base palte 40 itself
Carry out the light UV that polarized light source module is sent, it is not necessary to which polaroid is set on light orientation board.Exist accordingly, it is capable to solve panel
There is the problem of product deficiency in light quantity in subregion.In the present embodiment, scan line SL and data wire DL all with lower polarisation pattern
PL belongs to different film layers, and part of scanning line SL and segment data line DL can overlap with fine rule P1.Therefore, through lower polarisation figure
Case PL light UV can be irradiated to scan line SL and data wire DL.Because scan line SL has scan line slit 120O and data
Line DL has data wire slit 130O.Therefore, the light UV that light source module is sent can pass through scan line slit 120O and number
According to line slit 130O, make the lower alignment materials layer 150 for being overlapped in scan line SL and data wire DL can also be by light UV to irradiation
Arrive, improve the orientation quality around scan line SL and data wire DL.
Fig. 5 A are the upper schematic diagrams of the array base palte 50 according to one embodiment of the invention.Fig. 5 B are Fig. 5 A Vertical Centre Lines
BB ' diagrammatic cross-section.It should be noted that, Fig. 5 A and Fig. 5 B embodiment continues to use the member of Figure 1A, Figure 1B embodiment herein
Part label and partial content, wherein representing identical or approximate element using identical or approximate label, and eliminate phase
With the explanation of technology contents.Explanation on clipped refers to previous embodiment, and it is no longer repeated for following embodiments.
Please also refer to Fig. 5 A and Fig. 5 B, array base palte 50 include substrate B2, black matrix" BM, upper polarisation pattern P U and
Color filter element 210.
Black matrix" BM and color filter element 210 are formed on substrate B2.Color filter element 210 is for example including more
The filter pattern of individual different colours, such as filtered including red filter pattern, blue filter pattern, green filter pattern and yellow
Light pattern.Black matrix" BM is for example separated the filter pattern of different colours.In one embodiment, black matrix" BM bags
Include the first block 200A and the second block 200B along bearing of trend D1 extensions along bearing of trend D2 extensions, the firstth area
Block 200A intermeshes with the second block 200B.In one embodiment, black matrix" BM the first block 200A is for example corresponding sweeps
Line SL settings are retouched, black matrix" BM the second block 200B such as respective data lines DL are set.
In one embodiment, black matrix" BM the first block 200A has multiple first slit 200OA, black matrix" BM
The second block 200B there are multiple second slit 200OB.First slit 200OA bearing of trend is for example same as the first block
200A bearing of trend D2, the second slit 200OB bearing of trend are same as the second block 200B bearing of trend D1.Second slit
200OB bearing of trend crisscrosses the first slit 200OA bearing of trend.First block 200A width A3 is for example micro- between 1
Between rice and 8 microns, the first slit 200OA width W4 is for example between 0.2 micron and 0.6 micron.In one embodiment,
First slit 200OA width W4 is essentially the 1% to 50% of corresponding first block 200A width A3.First slit
200OA width W4 is identical with the first block 200A width A3 measurement direction, is e.g. extending vertically direction D2 side
Measure upwards.Second block 200B width A4 is for example between 1 micron and 8 microns, the second slit 200OB width W5 examples
As between 0.2 micron and 0.6 micron.In one embodiment, the second slit 200OB width W5 be essentially corresponding to the
The 1% to 50% of two block 200B width A4.Second slit 200OB width W5 and the second block 200B width A4 amount
It is identical to survey direction, is e.g. measured on the direction for extending vertically direction D1.
Polarisation pattern P U is gone up in being formed on substrate B2, in one embodiment, between upper polarisation pattern P U and black matrix" BM
It is separated with insulating barrier 215.In one embodiment, upper polarisation pattern P U is for example including a plurality of fine rule P2 parallel to each other.Implement one
In example, upper polarisation pattern P 2 has multiple parallel upper polarisation slit P2O, polarisation slit P2O width W6 width on these
About between 15nm and 120nm.At least part fine rule P2 is overlapped in black matrix" BM and color filter element 210.One
In embodiment, at least part fine rule P2 is overlapped in black matrix" BM the first slit 200OA and the second slit 200OB.
Alignment materials layer 250 in formation, upper alignment materials layer 250 for example cover polarisation pattern P U, black matrix" BM with
And color filter element 210.In one embodiment, in formation the method for alignment materials layer 250 be, for example, method of spin coating, it is recessed/
Surface printing or ink jet printing.In one embodiment, upper alignment materials layer 250 is for example including polyimides or other suitable height
Molecular material.
Light source module is provided, and upper polarisation pattern P U is located between light source module and upper alignment materials layer 250.Light source module
Such as unpolarized light UV can be projected, light UV is for example including ultraviolet light.In the present embodiment, light UV from top to bottom according to
Penetrate, such as enter array base palte 50 from substrate B2 outside.Light UV can be changed into polarised light after passing through upper polarisation pattern P U, connect
And light orientation is carried out to upper alignment materials layer 250, alignment materials layer 250 is changed into both alignment layers.
The array base palte 50 of the present embodiment includes upper polarisation pattern P U, utilizes the upper polarisation pattern P U of array base palte 50 itself
Carry out the light UV that polarized light source module is sent, it may be unnecessary to which polaroid is set on light orientation board.Accordingly, it is capable to solve in portion
There is the problem of product deficiency in light quantity in subregion.In the present embodiment, black matrix" BM belongs to different film layers from upper polarisation pattern P U,
And part black matrix" BM can overlap with fine rule P2.Therefore, black matrix" can be irradiated to through upper polarisation pattern P U light UV
BM.Because black matrix" BM has the first slit 200OA and the second slit 200OB.Therefore, the light that light source module is sent
UV can pass through the first slit 200OA and the second slit 200OB, make the upper alignment materials layer 250 for being overlapped in black matrix" BM
The orientation quality around black matrix" BM can also be improved by light UV to being irradiated to.
Fig. 6 is the diagrammatic cross-section of the array base palte 60 according to one embodiment of the invention.It should be noted that, scheme herein
6 embodiment continue to use Fig. 5 A, Fig. 5 B embodiment element numbers and partial content, wherein using identical or approximate label come
Identical or approximate element is represented, and eliminates the explanation of constructed content.Before explanation on clipped refers to
Embodiment is stated, it is no longer repeated for following embodiments.
Fig. 6 is refer to, in the present embodiment, upper polarisation pattern P U is configured at substrate B2 outside.In other words, this implementation
Upper polarisation pattern P U and black matrix" BM in example are located at the relative both sides of substrate B2 respectively.
The array base palte 60 of the present embodiment includes upper polarisation pattern P U, utilizes the upper polarisation pattern P U of array base palte 60 itself
Carry out the light UV that polarized light source module is sent, it may be unnecessary to which polaroid is set on light orientation board.Accordingly, it is capable to solve in portion
There is the problem of product deficiency in light quantity in subregion.In the present embodiment, black matrix" BM belongs to different film layers from upper polarisation pattern P U,
And part black matrix" BM can overlap with fine rule P2.Therefore, black matrix" can be irradiated to through upper polarisation pattern P U light UV
BM.Because black matrix" BM has the first slit 200OA and the second slit 200OB.Therefore, the light that light source module is sent
UV can pass through the first slit 200OA and the second slit 200OB, make the upper alignment materials layer 250 for being overlapped in black matrix" BM
The orientation quality around black matrix" BM can also be improved by light UV to being irradiated to.
Fig. 7 is a kind of diagrammatic cross-section of panel according to one embodiment of the invention.Herein it should be noted that, Fig. 7
Embodiment continue to use Figure 1A, Figure 1B, Fig. 5 A, Fig. 5 B embodiment element numbers and partial content, wherein using identical or near
As label represent identical or approximate element, and eliminate the explanation of constructed content.On saying for clipped
Bright to refer to previous embodiment, it is no longer repeated for following embodiments.
Fig. 7 is refer to, panel includes array base palte 10 and array base palte 60, but the present invention is not limited, in panel
Array base palte 10 can be replaced array base palte 20,30 or 40 in above-described embodiment, the array base palte 60 in panel is replaceable
For the array base palte 50 in above-described embodiment.Sealing S engaged arrays substrate 10 and array base palte 60.Sealing S is, for example, to be located at
The peripheral region BR of panel.In one embodiment, the black matrix" BM of array base palte 60 is overlapped in the scan line SL of array base palte 10
And data wire DL, black matrix" BM the first slit 200OA is substantially parallel to scan line SL bearing of trend D2, and black square
Bearing of trend D1 of battle array BM the second slit 200OB bearing of trend substantially parallel to data wire DL.
In one embodiment, there are multiple liquid crystal molecule LC between array base palte 10 and array base palte 60.In this implementation
Example in, liquid crystal molecule LC citing system can by horizontal component of electric field rotate or switch liquid crystal molecule either can by vertical electric field rotate or
The liquid crystal molecule of switching, but not limited to this.
Polarisation pattern P includes lower polarisation pattern P L and upper polarisation pattern P U, and alignment materials layer includes lower alignment materials layer
150 and upper alignment materials layer 250.In one embodiment, light UV is projected through lower polarisation pattern P L with right in light source module
Before lower alignment materials layer 150 carries out light orientation, and project light UV in light source module and pass through upper polarisation pattern P U with to upper
Before alignment materials layer 250 carries out light orientation, with sealing S engaged arrays substrate 10 and array base palte 60, but the present invention not with
This is limited.In other embodiments, light UV is projected through lower polarisation pattern P L with to lower alignment materials layer 150 in light source module
After carrying out light orientation, and project light UV in light source module and pass through upper polarisation pattern P U to enter upper alignment materials layer 250
Row light orientation and then with sealing S engaged arrays substrate 10 and array base palte 60.
In the present embodiment, array base palte 60 has black matrix" BM and a color filter element 210, but the present invention not with
This is limited.In other embodiments, black matrix" BM and color filter element 210 can be located on array base palte 10, to form
Color filter element can not wrap in the structure of (color filter on array, COA) on pel array, array base palte 60
Include black matrix" BM and color filter element 210.
The array base palte of at least embodiment of the present invention includes polarisation pattern, utilizes the polarisation pattern of array base palte in itself
Carry out the light that polarized light source module is sent, it may be unnecessary to which polaroid is set on light orientation board.Accordingly, it is capable to solve in part
There is the problem of product deficiency in light quantity in region.
In one embodiment, scan line and data wire all belong to different film layers from polarisation pattern, and part of scanning line with
And segment data line can overlap with the fine rule of polarisation pattern.Therefore, through polarisation pattern light can be irradiated to scan line and
Data wire.In the present embodiment, scan line with scan line slit and/or data wire with data wire slit.Therefore, light source die
The light that block is sent can pass through scan line slit and data wire slit, make the alignment materials for being overlapped in scan line and data wire
Layer can also improve the orientation quality around scan line and data wire by light to being irradiated to.
In one embodiment, black matrix" has the first slit and the second slit.Therefore, the light that light source module is sent
Line can pass through the first slit and the second slit, the alignment materials layer for being overlapped in black matrix" is irradiated by light,
Improve the orientation quality around black matrix".
Certainly, the present invention can also have other various embodiments, ripe in the case of without departing substantially from spirit of the invention and its essence
Various corresponding changes and deformation, but these corresponding changes and deformation can be made according to the present invention by knowing those skilled in the art
The protection domain of the claims in the present invention should all be belonged to.
Claims (19)
- A kind of 1. manufacture method of panel, it is characterised in that including：Array basal plate is provided, the array base palte includes a polarisation pattern；An alignment materials layer is formed on the array base palte；AndA light source module is provided, wherein the polarisation pattern is located between the light source module and the alignment materials layer, and the light source die The light that block projects is through the polarisation pattern with to alignment materials layer progress light orientation.
- 2. the manufacture method of panel according to claim 1, it is characterised in that the array base palte further includes：Multi-strip scanning line and a plurality of data lines；Multiple active members, respectively with those scan lines and those data line electrical connections；AndMultiple first electrodes, wherein the polarisation pattern include polarisation pattern, and at least those sweep the lower polarisation pattern with part Retouch line and/or those data wires of part and/or those first electrodes overlap, wherein the lower polarisation pattern has multiple lower polarisations narrow Seam, the alignment materials layer include alignment materials layer, and the light that the light source module projects is through the lower polarisation pattern with to this Lower alignment materials layer carries out light orientation.
- 3. the manufacture method of panel according to claim 2, it is characterised in that at least one in those scan lines has Scan line slit, parallel to the bearing of trend of the corresponding scan line, the scan line is narrow for the bearing of trend of the scan line slit The width of seam is the 1% to 50% of the width of the corresponding scan line, and the lower polarisation pattern belongs to different from those scan lines Film layer.
- 4. the manufacture method of the panel according to claim 2 or the 3rd, it is characterised in that at least one in those data wires Individual to have a data wire slit, the bearing of trend of the data wire slit is parallel to the bearing of trend of the corresponding data wire, the number Width according to line slit is the 1% to 50% of the width of the corresponding data wire, and the lower polarisation pattern and those data wire category In different film layers.
- 5. the manufacture method of panel according to claim 2, it is characterised in that passed through in the light that the light source module projects After the lower polarisation pattern to the lower alignment materials layer to carry out light orientation, further include with a sealing engage the array base palte and Another array base palte.
- 6. the manufacture method of panel according to claim 2, it is characterised in that passed through in the light that the light source module projects The lower polarisation pattern with before carrying out light orientation to the lower alignment materials layer, further include with a sealing engage the array base palte and Another array base palte.
- 7. the manufacture method of panel according to claim 2, it is characterised in that those first electrodes have multiple electrodes narrow Seam, those lower polarisation slits and the angle of those corresponding electrode narrow slits are -15 to spend to 15 degree or 75 degree to 105 degree.
- 8. the manufacture method of panel according to claim 7, it is characterised in that the array base palte further includes multiple second electricity Pole is electrically connected at an at least common line, and those first electrodes are electrically connected with the corresponding active member respectively.
- 9. the manufacture method of panel according to claim 1, it is characterised in that the array base palte further includes a black square Battle array, wherein the polarisation pattern include polarisation pattern on one, and polarisation pattern and the black matrix" at least partly overlap on this, on this partially Light pattern includes multiple upper polarisation slits, and the alignment materials layer includes alignment materials layer on one, and the light that the light source module projects Line is through polarisation pattern on this with to alignment materials layer progress light orientation on this.
- 10. the manufacture method of panel according to claim 9, it is characterised in that the array base palte further includes a colored filter Optical element, overlapped with polarisation pattern on this.
- 11. the manufacture method of panel according to claim 9, it is characterised in that the black matrix" has multiple first narrow Seam, the width of those the first slits is the 1% to 50% of the width of the black matrix".
- 12. the manufacture method of panel according to claim 9, it is characterised in that further include：Plural liquid crystal molecule is provided between the array base palte and another array base palte；AndThe array base palte and another array base palte are engaged with a sealing, another array base palte includes：Multi-strip scanning line and a plurality of data lines；AndMultiple active members, it is overlapped in this with those scan lines and those data line electrical connections, the wherein black matrix" respectively A little scan lines and those data wires, those first slits are parallel to the bearing of trend of those scan lines, and the black matrix" also has There are multiple second slits, the bearing of trend of the bearing of trends of those the second slits parallel to those data wires.
- A kind of 13. array base palte, it is characterised in that including：Multi-strip scanning line and a plurality of data lines；Multiple active members, respectively with those scan lines and those data line electrical connections；Multiple first electrodes and polarisation pattern once, the lower polarisation pattern overlaps with those first electrodes, and the lower polarisation pattern With multiple parallel lower polarisation slits, wherein：At least one in those scan lines has scan line slit, and is overlapped with the lower polarisation pattern；And/orOne in those data wires at least has a data wire slit, and is overlapped with the lower polarisation pattern.
- 14. array base palte according to claim 13, it is characterised in that those first electrodes have multiple electrodes slit, The angle that one of one of those lower polarisation slits and those corresponding electrode narrow slits are formed be -15 degree to 15 degree or 75 degree extremely 105 degree.
- 15. array base palte according to claim 13, it is characterised in that in those scan lines it is at least one have sweep Retouch line slit, the bearing of trend of the scan line slit parallel to the corresponding scan line bearing of trend, the scan line slit Width is the 1% to 50% of the width of the corresponding scan line, and the lower polarisation pattern belongs to different film layers from those scan lines.
- 16. according to the array base palte described in claim 13 or the 15th, it is characterised in that at least one tool in those data wires There is a data wire slit, the bearing of trend of the data wire slit is parallel to the bearing of trend of the corresponding data wire, the data wire The width of slit is the 1% to 50% of the width of the corresponding data wire, and the lower polarisation pattern belongs to not with those data wires Same film layer.
- A kind of 17. array base palte, it is characterised in that including：One black matrix", including multiple first slits；AndPolarisation pattern on one, including multiple upper polarisation slits, and those first slits of polarisation pattern and the black matrix" on this Overlap.
- 18. array base palte according to claim 17, it is characterised in that the black matrix" further includes and polarisation pattern on this Multiple second slits to overlap, the bearing of trend of those the second slits crisscross the bearing of trend of those the first slits.
- 19. array base palte according to claim 17, it is characterised in that the width of those the first slits is the black matrix" Width 1% to 50%, width of polarisation slit is about 15 nanometers to 120 nanometers on those.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW106123719A TWI628493B (en) | 2017-07-14 | 2017-07-14 | Manufacturing method of panel and array substrate |
| TW106123719 | 2017-07-14 |
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| Publication Number | Publication Date |
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| CN107765481A true CN107765481A (en) | 2018-03-06 |
| CN107765481B CN107765481B (en) | 2020-07-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201711132897.3A Active CN107765481B (en) | 2017-07-14 | 2017-11-15 | Manufacturing method of panel and array substrate |
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| TW (1) | TWI628493B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109557713A (en) * | 2019-01-14 | 2019-04-02 | 合肥京东方光电科技有限公司 | Display base plate and preparation method thereof, display panel |
| US11392003B2 (en) | 2020-02-06 | 2022-07-19 | Au Optronics Corporation | Active device substrate and method for manufacturing the same |
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| KR100862240B1 (en) * | 2002-07-31 | 2008-10-09 | 엘지디스플레이 주식회사 | Reflective liquid crystal display and fabrication method of the same |
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| JP4617102B2 (en) * | 2004-06-11 | 2011-01-19 | 大日本印刷株式会社 | Manufacturing method of liquid crystal display element |
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| JPH10170921A (en) * | 1996-12-13 | 1998-06-26 | Matsushita Electric Ind Co Ltd | Production of liquid crystal display panel |
| KR100862240B1 (en) * | 2002-07-31 | 2008-10-09 | 엘지디스플레이 주식회사 | Reflective liquid crystal display and fabrication method of the same |
| US20040263753A1 (en) * | 2003-06-30 | 2004-12-30 | Lg.Philips Lcd Co., Ltd. | In-plane switching mode liquid crystal display device and method of fabricating the same |
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| CN109557713A (en) * | 2019-01-14 | 2019-04-02 | 合肥京东方光电科技有限公司 | Display base plate and preparation method thereof, display panel |
| US11392003B2 (en) | 2020-02-06 | 2022-07-19 | Au Optronics Corporation | Active device substrate and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI628493B (en) | 2018-07-01 |
| TW201908831A (en) | 2019-03-01 |
| CN107765481B (en) | 2020-07-17 |
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