KR100862240B1 - Reflective liquid crystal display and fabrication method of the same - Google Patents

Abstract

The present invention relates to a reflective liquid crystal display device in which a structure of data wiring is changed in a reflective liquid crystal display device. In reflective liquid crystal display devices requiring high luminance, a black matrix is generally used to increase the contrast ratio. On the other hand, the black matrix decreases the area of reflected light, thereby lowering the luminance.

In the present invention, the shape of the data wiring is improved to reduce or eliminate the area of the black matrix while maintaining the contrast ratio.

Reflective electrode (reflective plate), black matrix, data wiring

Description

Reflective liquid crystal display and its manufacturing method {Reflective liquid crystal display and fabrication method of the same}             

1 is an enlarged plan view showing a part of an array substrate for a general reflective liquid crystal display device;

FIG. 2 is a cross-sectional view of a conventional reflective liquid crystal display device taken along the line II-II ′ of FIG. 1;

3 is an enlarged cross-sectional view illustrating an enlarged area B of FIG. 2;

4 is a cross-sectional view schematically showing a part of an array substrate for a reflective liquid crystal display device according to the present invention;

5 is an enlarged plan view showing a part of an array substrate for a reflective liquid crystal display device according to the present invention;

6A to 6D are cross-sectional views taken along the line VV ′ of FIG. 5 and according to the process sequence of the present invention.

7 is an enlarged plan view illustrating a portion of an array substrate for a reflective liquid crystal display device according to a second embodiment of the present invention;

8 is an enlarged plan view illustrating an enlarged portion of an array substrate for a reflective liquid crystal display device according to a third embodiment of the present invention;

9 is an enlarged plan view illustrating an enlarged portion of an array substrate for a reflective liquid crystal display device according to a fourth embodiment of the present invention;

10A to 10E and FIGS. 11A to 11D are cross-sectional views illustrating the process sequence of the present invention, taken along the lines VII-VII` and VII-VII` of FIG. 9.

 <Brief description of symbols for the main parts of the drawings>

102 gate electrode 106 gate wiring

110: active layer 114: source electrode

116: drain electrode 118: data wiring

124: reflective electrode

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a reflective liquid crystal display device having an improved shape of a data line and a manufacturing method thereof.

In general, the liquid crystal display may be classified into a transmissive liquid crystal display using a backlight and a reflective liquid crystal display using an external light source according to a method of using a light source.

Transmissive liquid crystal displays consume more than two-thirds of the total power using the backlight as a light source, while reflective liquid crystal displays do not require a backlight, thereby reducing power and battery consumption. However, the reflective liquid crystal display has a problem in that the luminance is not sufficient and the contrast ratio is small because there is no external light source.

In order to increase the contrast ratio, a reflective matrix liquid crystal display generally uses a black matrix, which reduces the luminance of the light by reducing the reflection area of the light.

Hereinafter, a configuration of a general reflective liquid crystal display device will be described with reference to FIG. 1.

As shown in FIG. 1, in the liquid crystal panel, a first substrate (upper substrate) 23 and a second substrate (lower substrate) 6 are bonded to each other at a predetermined interval, and face the first substrate 23. On one surface of the second substrate 6, a data line 17 and a gate line 5 defining a pixel region P intersect each other perpendicularly to each other, and a thin film transistor T is formed at an intersection point of the two lines. Is composed.

In the pixel region P, a reflective electrode (pixel electrode) 18 in contact with the thin film transistor T is formed.

In this case, as the material for forming the reflective electrode 18, aluminum (Al) having excellent conductivity and reflectance and an alloy-type conductive material including the same are mainly used.

On the other hand, one surface of the first substrate 23 facing the second substrate 6 has a black matrix 21 having a lattice shape and an open portion inside the lattice, that is, a color corresponding to the pixel area P. Filter layers 22a, 22b, and 22c are formed, and a transparent common electrode 24 is formed on the entire surface of the first substrate 23 including the color filter and the black matrix.

The liquid crystal layer 20 is formed in spaced spaces between the first and second substrates 23 and 6.

In the above-described configuration, the black matrix 21 is configured in a region corresponding to the data line, the gate line and the thin film transistor, wherein the alignment margin is further given in consideration of the bonding error between the first substrate and the second substrate. Done.

As a result, the area occupied by the black matrix becomes large.

This will be described with reference to the cross-sectional views of FIGS. 2 and 3.

FIG. 2 is a cross-sectional view of a conventional reflective liquid crystal display device cut along II-II ′ of FIG. 1, and FIG. 3 is an enlarged cross-sectional view of region B of FIG. 2.

As shown in the drawing, a data line 17 is formed between the adjacent pixel areas P1 and P2 in the first substrate 6, and the second substrate 23 facing the first substrate 6 is formed. The color filters 22a, 22b, and 22c are formed in correspondence with the pixel areas P1 and P2, and the black matrix 21 is formed in correspondence with the data lines 17. In FIG.

In this case, when the distance between the adjacent reflective electrode 18 on the upper portion of the data line 17 is a, and the area where the both sides of the data line 17 and the adjacent reflective electrode 18 overlap each other is b, The width of the black matrix 21 should be composed of a width of a + 2b.

In this case, since the uniform electric field is not sufficiently applied to the liquid crystal (not shown) corresponding to the width of a, unlike the liquid crystal corresponding to the upper portion of the reflective electrode, the pixel region may apply a voltage showing a black state in the normally white mode. This part acts as a light leakage area. Therefore, this part must be covered by the black matrix 21, and 2b is an alignment margin value considering the bonding error of the first substrate 6 and the second substrate 23 in mind. to be. Therefore, as mentioned above, the area occupied by the black matrix 21 is very large.

Therefore, the effective reflection area is greatly reduced, which is not suitable for the reflection type liquid crystal display device requiring high brightness.

As described above, in the reflective liquid crystal display device, since the light reflected by the reflective electrode is used without using an external light source, it is important to increase the high brightness and the contrast ratio.

The black matrix is used to increase the contrast ratio, which prevents light leakage in the area where the data lines are formed, thereby increasing the contrast ratio, but the overlap of the data lines and the black matrix reduces the effective reflection area to lower the luminance.

An object of the present invention is to provide a high quality reflective liquid crystal display device by increasing the contrast ratio while improving the effective reflection area reduction due to the black matrix.

A reflective liquid crystal display device according to a first aspect of the present invention comprises: a plurality of pixel regions defined in a matrix form on a substrate; A gate wiring extending beyond one side of the pixel area neighboring in the one direction; A data line which intersects the gate line perpendicularly and extends beyond the other side of the pixel area not parallel to a portion where the gate line passes; A thin film transistor configured at an intersection point of the gate line and the data line, the thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode; And a reflective electrode formed in the pixel area while in contact with the drain electrode and covering all data lines passing through the pixel area.

The data line is divided into a first line and a second line at one end of the substrate, and is configured to extend vertically past each of the pixel areas adjacent in the horizontal direction.

In another example, the data line is bent in a vertical direction so as to be configured through a spaced area between pixel regions neighboring in the horizontal direction.

In this case, the lengths of the data lines passing through the adjacent pixel areas in parallel to each other are configured to be the same.

The gate line is connected to the gate electrode, and the data line is configured to be connected to the source electrode.

The reflective electrode is composed of one selected from the group of conductive metals including aluminum (Al) and an aluminum alloy.

The reflective electrode forms a portion corresponding to the pixel region in an uneven shape.

A method of manufacturing an array substrate for a reflective liquid crystal display device according to a first aspect of the present invention includes the steps of defining a pixel region in a matrix form on the substrate; Forming a gate line so as to extend in a horizontal direction through one side of the adjacent pixel area in the one direction; Forming a data line so as to intersect the gate line so as to extend beyond the other side of the pixel region that is not parallel to the portion through which the gate line passes; forming a data line inside the pixel region; Forming a thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode at an intersection point of the gate line and the data line; And forming a reflective electrode formed in the pixel area while in contact with the drain electrode and covering all of the data lines passing through the pixel area.

The data line is divided into a first line and a second line at one end of the substrate, and is formed to extend vertically past each of the pixel areas adjacent in the horizontal direction.

As another example, the data line is formed to be bent in a vertical direction so as to be configured through a spaced area between adjacent pixel areas in the horizontal direction.

At this time, the lengths of the data lines passing through the adjacent pixel areas in parallel are formed to be the same.

An array substrate for a reflective liquid crystal display device according to a second aspect of the present invention comprises: a plurality of pixel regions defined in matrix form on a substrate; A gate wiring extending beyond one side of the pixel region neighboring in the one direction, and a storage first electrode extending from the gate wiring to the pixel region; A data line extending beyond the other side of the pixel region that is not parallel to a portion through which the gate line passes, so as to vertically cross the gate line;                     

A data line divided into a first line and a second line at one end of the substrate and vertically extending to pass through adjacent pixel areas in parallel; A thin film transistor configured at an intersection point of the gate line and the data line, the thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode; A storage second electrode extending from the drain electrode to an upper portion of the first electrode through a pixel region; And a reflective electrode formed in the pixel area in contact with the second electrode and covering all of the data lines passing through the pixel area.

The first line and the second line of the data line are configured to be connected to each other at an upper portion of the gate line of a portion crossing the gate line, and the first line of the data line is connected between the gate line and the first electrode of the storage capacitor. It is configured to pass by overlapping extensions.

According to a second aspect of the present invention, there is provided a method of manufacturing an array substrate for a reflective liquid crystal display device, the method including: defining pixel regions in a matrix form on the substrate; Forming a gate wiring extending beyond one side of the pixel region neighboring in the one direction, and a storage first electrode extending from the gate wiring to the pixel region; Forming a data line extending perpendicularly to the gate line and extending through the other side of the pixel region that is not parallel to a portion through which the gate line passes; a first line and a second line at one end of the substrate Forming data lines vertically extended to pass through adjacent pixel areas in parallel with each other; Forming a thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode at an intersection point of the gate line and the data line; Forming a storage second electrode extending from the drain electrode to an upper portion of the storage first electrode through a pixel region; And forming a reflective electrode formed in the pixel area while in contact with the second electrode and covering all of the data lines passing through the pixel area.

In this case, the first line and the second line of the data line are formed to be connected to each other at an upper portion of the gate line at a portion that intersects the gate line, and the first line of the data line is an extension portion of the gate line and the first electrode. Form to pass through.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

First Embodiment

In the present embodiment, the black matrix is removed by modifying the shape of the data wiring to improve the reduction of the effective reflection area due to the overlap of the black matrix and the data wiring.

4 is a cross-sectional view showing a schematic configuration of a reflective liquid crystal display device according to a first embodiment of the present invention.

As shown in the drawing, the first substrate 100 and the second substrate 140 are configured to be spaced apart from each other by a predetermined distance, and the gate electrode 102 is disposed on one surface of the first substrate 100 facing the second substrate 140. And the thin film transistor T including the active layer 110, the source electrode 114, and the drain electrode 116, the data line 118 contacting the source electrode 114, and the gate electrode (not shown). A gate wiring (not shown) connected with the 102 is formed.

The two wires intersect to define a plurality of pixel areas P1 and P2.

A passivation layer 126 is formed on an entire surface of the substrate 100 including the thin film transistor T and the data line 118, and the drain electrode 116 is disposed in the pixel areas P1 and P2 on the passivation layer 126. And a reflective electrode 124 in contact with it.

In this case, the reflective electrode 124 may be formed in an uneven shape to increase luminance. Of course, the surface of the protective film is formed in an uneven shape, and in general, a method of expressing an uneven shape indirectly is common.

In the above-described configuration, the data line 118 is divided into both sides to constitute the first line 118a and the second line 118b, and the divided first line 118a and the second line 118b are each in the horizontal direction. As a result, it extends below the neighboring reflective electrode 124.

One surface of the second substrate 140 facing the first substrate 100 includes red, green, and blue color filters 134a, 134b, and 134c corresponding to each pixel area, and the color filter 134a. The transparent common electrode 132 is formed on the upper portions of 134b and 134c.

In the above-described configuration of the reflective liquid crystal display device, since light incident from the outside is reflected on the reflective electrode, the light is transmitted to the spaced space between the first line 118a and the second line 118b. Unlike, light leakage is not observed in the spaced area E of the neighboring reflective electrode 124.

Therefore, it is not necessary to form a black matrix (not shown) corresponding to the spaced apart regions of the adjacent reflective electrodes 124 in the parallel direction.                     

As a result, unlike the related art, since the black matrix is formed only in a portion corresponding to the gate wiring, the effective area occupied by the black matrix can be reduced, thereby obtaining high brightness and high contrast ratio.

Hereinafter, a planar configuration of an array substrate for a reflective liquid crystal display device according to a first embodiment of the present invention will be described in detail with reference to FIG. 5.

As shown in the figure, the gate wiring 106 and the data wiring 118 are formed to vertically intersect to define the pixel regions P1 and P2. The gate electrode 102 connected to the gate line 106 at the portion where the two wires 106 and 118 cross, the active layer 110, the source electrode 114 connected to the data line 118, and The thin film transistor T including the drain electrodes 116 spaced apart from each other is configured, and the reflective electrodes 124 contacting the drain electrodes 116 are formed in the pixel regions P1 and P2.

In this case, the data line 118 is composed of a first line 118a and a second line 118b which are split from ends, and each of the data lines 118 extends below the neighboring reflective electrode 124.

The sum of the widths of the first line 118a and the second line 118b should be equal to the width of the conventional data line in consideration of line resistance.

As described above, the data line for reflecting light does not exist in the area E between the parallelly spaced reflective electrodes 124, so that a black matrix does not have to be formed on the upper substrate corresponding to this portion. The black matrix 130 is formed only on the upper portion 106.                     

In this case, the first line and the second line 118a and 118b are configured to be connected at least once in a portion passing through the gate wiring 106, and the connection portion is configured to overlap the gate wiring.

6A to 6D, a method of manufacturing an array substrate for a reflective liquid crystal display device according to a first embodiment of the present invention will be described.

6A through 6D are cross-sectional views illustrating a process sequence of the present invention cut along the line VV ′ of FIG. 5.

First, as shown in FIG. 6A, a gate wiring (106 in FIG. 5) including the gate electrode 102 is formed on the substrate 100.

Since the gate material is important for the operation of the liquid crystal display, aluminum (Al) having a low resistance is mainly used to reduce the RC delay. However, pure aluminum has a weak chemical corrosion resistance, and is healed in a subsequent high temperature process. Since wiring defects are caused by hillock formation, a multilayer structure including aluminum wiring (Al / Mo) may be applied to aluminum wiring.

Next, as shown in FIG. 6B, an inorganic insulating material group including silicon nitride (SiN _x ), silicon oxide (SiO _x ), or the like is formed on the entire surface of the substrate 100 on which the gate electrode 102 and the like are formed. One is deposited to form a gate insulating film 108.

Next, an amorphous silicon (a-Si: H) active layer 110 and an amorphous silicon containing impurities are stacked on the gate insulating layer 108 on the gate electrode 102. An (n + a-Si: H) ohmic contact layer 112 is formed.

Next, as illustrated in FIG. 6C, one of conductive metal groups including chromium (Cr), molybdenum (Mo), antimony (Sb), and titanium (Ti) is deposited on the ohmic contact layer 112. After patterning, data connected to the source electrode 114 and the drain electrode 116 and the source electrode 114 and perpendicularly intersect the gate wiring (not shown) to define the pixel regions P1 and P2. The wiring 118 is formed.

In this case, the data line 420 is divided into a first line 118a and a second line 118b at one end of the substrate 100, and is configured in the pixel areas P1 and P2 neighboring in the horizontal direction. And vertically extending to form at least one connection at a portion that intersects the gate wiring (not shown), and the connection portion is configured to overlap the gate wiring.

Next, an organic insulating material including benzocyclobutene (BCB) and an acrylic resin is coated on the entire surface of the substrate 100 on which the source and drain electrodes 114 and 116 and the data line 118 are formed. The protective film 120 is formed.

Subsequently, the passivation layer 120 is etched to form a drain contact hole 122 that partially exposes the drain electrode 116.

In this case, the surface of the passivation layer 120 corresponding to the pixel region P is formed by concave and convex portions formed by convex portions and concave portions by a predetermined method.

Next, as shown in FIG. 6D, the reflective electrode 124 positioned in the pixel region P is formed while being in contact with the exposed drain electrode 116.

The reflective electrode 124 uses a conductive material having low resistance and excellent reflectance, such as aluminum (Al) or aluminum alloy.

At this time, the reflective electrode 124 is indirectly concave-convex due to the unevenness of the passivation layer 120. Therefore, high reflectance can be realized.

Through the above-described process, an array substrate for a reflective liquid crystal display device according to a first embodiment of the present invention can be manufactured.

Hereinafter, a modification of the present invention is proposed through the second embodiment.

Second Embodiment

7 is a plan view showing a part of an array substrate for a reflective liquid crystal display device according to a second embodiment of the present invention.

As shown in the drawing, the data line 217 and the gate line 205 that define the pixel regions P1 and P2 are vertically intersected, and the gate line 205 is formed at a portion where the two lines 217 and 205 cross each other. Thin film transistor (T) including a gate electrode 208 connected to the second electrode, an active layer 212, a source electrode 214 connected to the data line 217, and a drain electrode 215 spaced apart from the predetermined distance. ) And a reflective electrode 218 in contact with the drain electrode 215 in the pixel region P. Referring to FIG.

At this time, the data line 217 is configured to be bent in the vertical direction, the bend is a rectangular shape.                     

That is, the portion connected to the source electrode 214 is bent to the right, and the middle portion of the reflective electrode 218 is bent to the left. Accordingly, one data line 217 is symmetrically formed under the reflective electrodes 218 adjacent to each other in the horizontal direction.

Therefore, the data line 217 is always configured through the spaced space between the pixel electrodes 218 adjacent in the horizontal direction twice.

At this time, the length A + B of the data line 205 located under the pixel electrode on one side among the adjacent pixel electrodes 218 and the length C of the data line 217 located under the pixel electrode on the other side are Should be the same.

The reason for doing this is to minimize the influence of the reflection electrode 218 by the polarity (+ pole or-pole) of the signal flowing through the data line 221.

In the above-described configuration, the area where the data line 217 passes and the region where the gate line is formed in the space E between the reflective electrodes 124 adjacent in the horizontal direction are covered by the black matrix 221a, 221b, and 221c. give.

In this case, since the area of the data line 221 passing through the spaced space between the reflective electrodes 218 is small, the black matrix may not be formed.

The above-described configuration is less than that of the first embodiment, but can reduce the effective area occupied by the black matrix as compared with the prior art.

Hereinafter, a modification of the present invention is proposed through the third embodiment.

-Third Example-

8 is an enlarged plan view showing a part of an array substrate for a reflective liquid crystal display device according to a third embodiment of the present invention.

8 is a modified example of FIG.

As shown in the drawing, the data line 320 and the gate line 305 are formed to vertically intersect to define the pixel region P1.P2. A gate electrode 308 connected to the gate line 305, an active layer 312, a source electrode 314 connected to the data line 320, and a portion where the two wires 320 and 305 cross each other; The thin film transistor T including the drain electrodes 316 spaced by a predetermined interval is configured, and the reflective electrodes 318 contacting the drain electrodes 316 are formed in the pixel regions P1 and P2.

At this time, the data line 320 is configured to be bent in a vertical direction, the bending is a rectangular shape.

That is, the portion connected to the source electrode 314 is bent to the left side, and the middle portion of the reflective electrode 318 is bent to the right side. Accordingly, one data line 320 is symmetrically formed under the reflective electrodes 318 adjacent to each other in the horizontal direction.

Therefore, the data line 320 is configured through the spaced space between the reflective electrodes 318 adjacent in the horizontal direction twice.

In the above-described configuration, black matrices 321a, 321b, and 321c are formed in a portion corresponding to the data line 320 passing through the neighboring reflective electrodes 318 and a portion corresponding to the gate line 305.                     

In this case, the length of the data line 320 positioned on one side of the neighboring reflecting electrodes 318 is positioned below the reflective electrode 318 which is horizontally spaced apart from A + B. Must be equal to the length (C).

The reason for doing this is as described above.

The above-described configuration may be used in some cases although the source electrode 314 connected to the data line 320 of the thin film transistor T may be abnormally long.

In addition to the configuration of the second and third embodiments described above, when the data line is bent, the data line may be configured to pass through the adjacent pixel areas only once in parallel.

Such a configuration may be used in some cases, although the shape of the source electrode of the thin film transistor may be alternately changed for each pixel (ie, becomes long or short).

Hereinafter, with reference to the fourth embodiment, a novel reflective liquid crystal display device incorporating the configuration of the data wiring of the first embodiment will be proposed.

 Fourth Example

9 is an enlarged plan view showing a part of an array substrate for a reflective liquid crystal display device according to a fourth embodiment of the present invention.

As shown in the drawing, a plurality of gate lines 406 spaced apart from each other in parallel in one direction of the substrate 400 and vertically intersect with the plurality of pixel areas P1, P2, P3, and P4. A plurality of data lines 420 are defined defining.

The portion of the gate wiring 406 between the pixel regions P1 and P2 and P3 and P4 parallel in one direction constitutes a significantly smaller width.

The data line 420 is divided into a first line 420a and a second line 420b at one end of the substrate 400, and adjacent pixel areas P1 and P2, P3 and P4 in parallel with each other. It extends vertically past each of the.

At this time, the first line 420a and the second line 420b intersect with the gate wiring (some gate wiring having a significantly smaller width corresponding to the horizontally parallel pixel regions) 406. It is configured to be connected to each other, the connection portion is configured to overlap the gate wiring 406 on the upper portion of the gate wiring 406.

First protrusions 402 protruding from the gate wiring 406 to the upper first pixel regions P1 and P2 among the pixel regions P1 and P3, P2 and P4 that are vertically adjacent to the gate wiring 406. ) And a second protrusion 408 which protrudes and extends into the lower second pixel regions P3 and P4, wherein the first protrusion 402 is used as a gate electrode and the second protrusion 408 is a lower second. It is used as the storage first electrode 408 of the storage capacitor part C _ST which is comprised in pixel area P3, P4.

In the above-described configuration, the first line 420a of the data line 420 is configured to pass over the connection J between the gate line 406 and the second protrusion 408.

The thin film transistor T includes the gate electrode 402, the active layer 412, the source electrode 416 connected to the data line 420, and a drain electrode 418 spaced apart from the predetermined distance. It is comprised at the intersection of the gate wiring 406 and the data wiring (2nd line of a data wiring) 420. FIG.

In this case, the extension portion 424 extends from the drain electrode 418 to the upper portion of the storage first electrode 408 via the pixel areas P1, P2, P3, and P4, which is a storage capacitor C. _ST ) is used as the storage second electrode.

That is, the first story electrode 408, the storage second electrode 424, and an insulating film (dielectric layer) (not shown) interposed therebetween constitute the storage capacitor C _ST .

For convenience, a portion connecting the drain electrode 418 and the storage second electrode 424 is called a connection wiring 422.

The reflective electrode 430 is configured for each pixel region P1, P2, P3, and P4 including the thin film transistor T, the gate line 406, the data line 420, and the storage capacitor C _ST . , Which is in contact with the storage second electrode 424 of the storage capacitor C _ST to receive an image signal from the drain electrode 418.

In this case, the reflective electrode 430 formed in an arbitrary pixel region covers not only the data wiring 420 passing through the pixel region but also the gate wiring 406 connected to the gate electrode 402 belonging to the pixel region. Configure.

In the above-described configuration, since the data line 420 is positioned below the reflective electrode 430 spaced apart from each pixel area, a black matrix may not be formed to cover light reflected by the data line.

In addition, the region between the reflective electrodes 430 disposed in the vertically neighboring pixel regions P1 and P3 and P2 and P4 exposes the connection portion J between the gate line and the second protrusion, and the horizontal neighboring region. A portion of the gate line 406 passing through the reflective electrodes 430 positioned in the pixel areas P1 and P2 and P3 and P4 (that is, a portion where the connection part of the first line and the second line of the data line overlaps) is exposed. This is because the area is small, it is not necessary to form a black matrix.

If the first line 420a of the data line is not overlapped with the extension J between the gate line 406 and the storage first electrode 408, or the first line 420a and the second line are not configured. If the gate wiring 406 is not connected at the top, the area where light is reflected by the metal wiring becomes large, and thus a black matrix should be formed.

Therefore, since the structure according to the present invention does not necessarily need to form a black matrix on the upper substrate, high luminance and aperture ratio can be obtained.

However, the overlapping area between the connection portion J between the gate line 406 and the storage first electrode 408 and the first line 420a of the data line 420 may affect the storage unit C _ST . The storage value can be changed.

However, when such a structure is used in a small area reflective liquid crystal display device, there is an advantage in that the variation of the storage capacity C _ST value can be reduced.

Hereinafter, a manufacturing process of an array substrate for a liquid crystal display device according to a fourth embodiment of the present invention will be described with reference to FIGS. 9A to 9E, 10A, and 10D.

10A through 10E and 11A through 11D are cross-sectional views illustrating a process sequence according to the present invention.

First, as shown in FIGS. 10A and 11A, a gate wiring 406 including a gate electrode 402 is formed on a substrate 400.

At the same time, the storage first electrode 408 extending from the gate line 406 to a predetermined area is formed.

In this case, the gate electrode 402 is a portion protruding upward from the gate wiring 406, and the storage first electrode 408 is a portion protruding downward.

Since the gate material is important for the operation of the liquid crystal display, aluminum (Al) having a low resistance is mainly used to reduce the RC delay. Since wiring defects are caused by hillock formation, a laminated structure including aluminum wiring (Al / Mo) is applied to aluminum wiring.

Next, as shown in FIGS. 10B and 11B, an inorganic insulating material including silicon nitride (SiN _x ), silicon oxide (SiO _x ), or the like on the entire surface of the substrate 400 on which the gate wiring 406 and the like are formed. The gate insulating layer 410 is formed by depositing one selected from the group.

Next, an amorphous silicon (a-Si: H) active layer 412 (active layer) and an amorphous silicon containing impurities are stacked on the gate insulating layer 410 on the gate electrode 402. An (n + a-Si: H) ohmic contact layer 414 is formed.

Next, as shown in FIG. 10C, a selected one of conductive metal groups including chromium (Cr), molybdenum (Mo), antimony (Sb), and titanium (Ti) is deposited on the ohmic contact layer 414. After the pattern, a data line connected to the source electrode 416 and the drain electrode 418, and connected to the source electrode 416 and perpendicular to the gate line 406 to define the pixel regions P3 and P4. 420 is formed.

At the same time, the connection line 422 extending from the drain electrode 418 to the pixel region P4 and the storage second electrode 424 extending from the connection line 422 to the upper portion of the storage first electrode 408. To form. In this case, the storage first electrode 408, the storage second electrode 424, and the insulating layer 410 formed between the two electrodes form a storage capacitor C _{ST as a} storage capacitor.

In this case, the data line 420 is divided into a first line 420a and a second line 420b at one end of the substrate 400 and extends vertically to the lower portions of the reflective electrodes adjacent in the horizontal direction. The first line 420a and the second line 420b are connected to each other in the portion K intersecting the gate line 406.

The connecting portion of the first line 420a and the second line 420b is configured to overlap the gate line (not shown), and it is not necessary to connect both wires at every portion crossing the gate line (not shown).                     

The first line 420a extends to overlap the connection portion J between the gate line 406 and the storage first electrode 408. In this case, since the area of the connection portion J is not so large, it is not necessary to form the black matrix.

Next, as shown in FIGS. 10D and 11C, benzocyclobutene (BCB) is disposed on the entire surface of the substrate 400 including the source and drain electrodes 416 and 418, the data line 420, and the storage second electrode 424. ) And a protective film 426 is formed by applying an organic insulating material including an acrylic resin (resin) and.

Subsequently, the passivation layer 426 is etched to form a contact hole 428 exposing a portion of the storage second electrode 424.

Next, as illustrated in FIGS. 10E and 11D, the reflective electrode 430 positioned in the pixel region P4 is formed while contacting the storage second electrode 424 through the contact hole.

The reflective electrode 430 uses a conductive material having low resistance and excellent reflectance, such as aluminum (Al) or aluminum alloy.

In this case, when the array substrate for a liquid crystal display device is configured as a reflective type, a reflective plate to which a signal is not applied may be formed in the pixel area, and a transparent electrode contacting the storage second electrode may be formed on or below the reflective plate. have.

Through the above-described process, an array substrate for a reflective liquid crystal display device according to a fourth embodiment of the present invention can be manufactured.                     

In the above-described configuration, since the black matrix does not have to be formed corresponding to the spaced regions of the reflective electrode, the effective area occupied by the black matrix can be reduced, thereby improving the high luminance.

In addition, since external light simply passes between the neighboring reflective electrodes 430, the mixing of light between neighboring pixels may be minimized, thereby achieving high contrast.

Therefore, since the array substrate for a reflective liquid crystal display device according to the present invention forms a data line under the reflective electrode, external light is scattered by the data line so that light leakage does not occur. At this time, light passes through the space between the reflective electrodes as it is.

Therefore, it is not necessary to form a separate black matrix to cover this, since the area as much as the alignment margin required when designing the black matrix can be used as an opening, thereby achieving high brightness and high contrast.

Claims (26)

A plurality of pixel regions defined in matrix form on the substrate; A gate wiring extending beyond one side of the pixel area neighboring in the one direction; A data line extending perpendicularly to the gate line and extending past the other side of the pixel region that is not parallel to a portion through which the gate line passes; A data line formed inside the pixel area; A thin film transistor configured at an intersection point of the gate line and the data line, the thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode; A reflective electrode formed in the pixel region in contact with the drain electrode and covering all of the data lines passing through the pixel region Array substrate for a reflective liquid crystal display device comprising a. The method of claim 1, And the data line is divided into a first line and a second line at one end of the substrate, and configured to extend vertically past each of the adjacent pixel areas in a horizontal direction. The method of claim 1, And the data line is bent in a vertical direction to be configured to pass through a spaced area between pixel areas adjacent to each other in the horizontal direction. The method according to any one of claims 2 to 3, An array substrate for a reflective liquid crystal display device, wherein the lengths of data lines passing through adjacent pixel areas in parallel with each other are the same. The method of claim 1, And the gate line is connected to the gate electrode, and the data line is connected to the source electrode. The method of claim 1, And the reflective electrode is one selected from a group of conductive metals including aluminum (Al) and an aluminum alloy. The method of claim 1, The reflective electrode array substrate for a reflective liquid crystal display device, wherein a portion corresponding to the pixel region is irregular. Defining pixel regions on a substrate in a matrix; Forming a gate line to extend in a horizontal direction through one side of the pixel area neighboring in the one direction; Forming a data line so as to extend perpendicularly to the gate line so as to extend past the other side of the pixel region that is not parallel to the portion where the gate line passes; Forming a data line in the pixel area; Forming a thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode at an intersection point of the gate line and the data line; Forming a reflective electrode formed in the pixel area while in contact with the drain electrode and covering all data lines passing through the pixel area; Array substrate manufacturing method for a reflective liquid crystal display device comprising a. The method of claim 8, And the data line is divided into a first line and a second line at one end of the substrate so as to extend vertically past each of the adjacent pixel regions in a horizontal direction. The method of claim 8, And the data line is formed to be bent in a vertical direction so as to pass through a spaced area between adjacent pixel areas in the horizontal direction. The method according to any one of claims 9 to 10, And a data line passing through adjacent pixel areas in parallel with each other. The method of claim 8, And the gate line is connected to a gate electrode, and the data line is connected to the source electrode. The method of claim 8, And the reflective electrode is formed of one selected from the group of conductive metals including aluminum (Al) and an aluminum alloy. The method of claim 8, And the reflecting electrode has a concave-convex portion corresponding to the pixel region. A plurality of pixel regions defined in matrix form on the substrate; A gate wiring extending beyond one side of the pixel region neighboring in the one direction, and a first electrode extending from the gate wiring to the pixel region; A data line extending beyond the other side of the pixel region that is not parallel to a portion through which the gate line passes, so as to vertically cross the gate line; A data line divided into a first line and a second line at one end of the substrate and vertically extending to pass through the pixel regions parallel to each other; A thin film transistor configured at an intersection point of the gate line and the data line, the thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode; A second electrode extending from the drain electrode to an upper portion of the first electrode through a pixel region; A reflective electrode formed in the pixel region in contact with the second electrode and covering all of the data lines passing through the pixel region Array substrate for a reflective liquid crystal display device comprising a. The method of claim 15, And the gate line is connected to a gate electrode, and the second line of the data line is connected to the source electrode. The method of claim 15, And the reflective electrode is one selected from a group of conductive metals including aluminum (Al) and an aluminum alloy. The method of claim 15, And a first line and a second line of the data line are connected to each other at an upper portion of the gate line at an intersection with the gate line. The method of claim 15, And a first line of the data line passes through an extension of the gate line and the first electrode. The method of claim 15, And the first electrode and the second electrode constitute a storage capacitor. Defining a pixel region on the substrate in a matrix; Forming a gate wiring extending beyond one side of the pixel region adjacent to the one direction and a first electrode extending from the gate wiring to the pixel region; Forming a data line that crosses the gate line and extends through the other side of the pixel region that is not parallel to a portion through which the gate line passes; Forming a data line divided into a first line and a second line at one end of the substrate and vertically extending to pass through adjacent pixel areas in parallel; Forming a thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode at an intersection point of the gate line and the data line; Forming a second electrode extending from the drain electrode to an upper portion of the first electrode through a pixel region; A reflective electrode formed in the pixel region in contact with the second electrode and covering all of the data lines passing through the pixel region Forming steps Array substrate manufacturing method for a reflective liquid crystal display device comprising a. The method of claim 21, And the gate line is connected to the gate electrode, and the second line of the data line is connected to the source electrode. The method of claim 21, And the reflective electrode is formed of one selected from the group of conductive metals including aluminum (Al) and an aluminum alloy. The method of claim 21, And a first line and a second line of the data line are formed to be connected to each other at an upper portion of the gate line at a portion crossing the gate line. The method of claim 21, And a first line of the data line passes through an extension of the gate line and the first electrode. The method of claim 21, And the first electrode and the second electrode form a storage capacitor.

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