TWI707185B - Array substrate - Google Patents

Abstract

An array substrate includes a plurality of scan lines, a plurality of data lines, a plurality of active devices, a plurality of first electrodes, and a lower polarizer pattern. The active devices are electrically connected to the scan lines and the data lines, respectively. The lower polarizer pattern overlaps the first electrodes, and the lower polarizer pattern has a plurality of lower polarizer slits parallel to each other, wherein: at least one of the scan lines has a scan line slit and overlaps with the lower polarizer pattern; and/or at least one of the data lines has a data line slit and overlaps with the lower polarizer pattern.

Description

Array substrate

The present invention relates to an array substrate, and particularly relates to an array substrate involving optical alignment technology.

In order to arrange the liquid crystal molecules in the display panel along a predetermined direction, it is often necessary to perform an alignment process in the process of manufacturing the display panel. In the alignment processing process, the brush-grinding alignment is likely to cause many problems such as fine dust and uneven stress. Therefore, the optical alignment process is another option. In the photo-alignment process, light is used to irradiate the alignment material layer on the substrate to cause the alignment material layer in a predetermined direction to undergo a chemical reaction to produce alignment. Therefore, the subsequently filled liquid crystal molecules can be aligned along a predetermined direction.

In the current optical alignment technology, it is necessary to use the polarizer on the optical alignment machine to polarize the light emitted by the light source module, but because there is a certain distance between the optical alignment machine and the motherboard, the optical alignment path may produce a little Errors cause the alignment effect to not meet expectations, or if the optical alignment machine uses spliced polarizers, the amount of accumulated light at the splicing site is often insufficient, which may cause discontinuous alignment between areas aligned at different times defect.

At least one embodiment of the present invention provides a method for manufacturing a panel, which can solve the problem of insufficient light accumulation in some areas in the optical alignment technology.

At least one embodiment of the present invention provides an array substrate, which can solve the problem of alignment defects in a part of the array substrate in the optical alignment technology.

At least one embodiment of the present invention provides a method for manufacturing a panel including the following steps: providing an array substrate including a polarizing pattern; forming an alignment material layer on the array substrate; providing a light source module, wherein the polarizing pattern is located on the light source module and the alignment material layer In between, the light emitted by the light source module passes through the polarizing pattern to align the alignment material layer.

At least one embodiment of the present invention provides an array substrate including a plurality of scan lines, a plurality of data lines, a plurality of active devices, a plurality of first electrodes, and a lower polarizing pattern. A plurality of active components are electrically connected to the scan line and the data line respectively. The lower polarizing pattern overlaps the first electrode, and the lower polarizing pattern has a plurality of parallel lower polarizing slits. One of the scan lines has a scan line slit and overlaps the lower polarization pattern; and/or one of the data lines has a data line slit and overlaps the lower polarization pattern.

At least one embodiment of the present invention provides an array substrate including a black matrix and an upper polarizing pattern. The black matrix includes a plurality of first slits. The upper polarization pattern includes a plurality of upper polarization slits, and the upper polarization pattern overlaps the first slit of the black matrix.

One of the objectives of the present invention is that there is no need to install a polarizer on the optical alignment machine.

One of the objectives of the present invention is to solve the problem of alignment defects in some areas of the panel.

One of the objectives of the present invention is to enable better alignment quality around scan lines and/or data lines.

One of the objectives of the present invention is to enable better alignment quality around the black matrix.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

The schematic diagrams herein are only used to illustrate some embodiments of the present invention. Therefore, the shape, number, and ratio of each element shown in the schematic diagram should not be used to limit the present invention. For example, the actual number, size, and shape of the polarization patterns in the schematic diagram are only for illustration, and do not mean that the actual number, size, and shape of the polarization patterns of the present invention must be as shown in the figure.

FIG. 1A is a schematic top view of an array substrate 10 according to an embodiment of the invention. FIG. 1B is a schematic cross-sectional view of the section line AA' in FIG. 1A and a partial peripheral area of the array substrate.

1A and 1B at the same time, the array substrate 10 includes a base B1, a shielding layer 100, a plurality of scan lines SL, a plurality of data lines DL, a plurality of active device TFT, a plurality of first electrodes 140A, a plurality of second electrodes 140B, and the lower polarizing pattern PL. In this embodiment, the array substrate 10 is, for example, an active device array substrate.

The shielding layer 100 is formed on the substrate B1. In one embodiment, the material of the substrate B1 may be glass, quartz, organic polymer or other materials that can transmit light. In one embodiment, the material of the shielding layer 100 may be metal, alloy, oxide, black resin or other materials with low light transmittance. In this embodiment, both the lower polarizing pattern PL and the shielding layer 100 are formed on the substrate B1 and contact the substrate B1. In one embodiment, the lower polarizing pattern PL and the shielding layer 100 are formed at the same time, for example, and the forming method is, for example, a nanoimprinting process or an exposure etching process. In one embodiment, the lower polarizing pattern PL includes, for example, a plurality of thin lines P1 parallel to each other, and the line width of the thin lines P1 is approximately between 25 nm and 125 nm. In an embodiment, the lower polarizing pattern PL may have a plurality of parallel lower polarizing slits P10, and the width W1 of the lower polarizing slits P10 is approximately between 15 nm and 120 nm. In this embodiment, the thin lines P1 on the substrate B1 are all parallel to each other and extend in the same direction, but the invention is not limited thereto. In some embodiments, there are a plurality of pixel regions PR with different designs from each other, and the thin lines P1 in the lower polarization pattern PL corresponding to the different pixel regions PR may have different extension directions.

The active device TFT is formed on the shielding layer 100. In one embodiment, an insulating layer 105 is sandwiched between the active device TFT and the shielding layer 100. The active device TFT includes a semiconductor layer 110, a gate insulating layer 115, a gate electrode 120, a source electrode 132 and a drain electrode 134. The semiconductor layer 110 is formed on the insulating layer 105. The semiconductor layer 110 is a single-layer or multi-layer structure, which includes amorphous silicon, polycrystalline silicon, microcrystalline silicon, single crystal silicon, organic semiconductor materials, oxide semiconductor materials (for example: indium zinc oxide, indium germanium zinc oxide, or Other suitable materials, or a combination of the above), or other suitable materials, or containing dopants in the above materials or a combination of the above. The gate insulating layer 115 is formed on the semiconductor layer 110 and the insulating layer 105. The gate 120 is formed on the gate insulating layer 115, and the gate insulating layer 115 is sandwiched between the semiconductor layer 110 and the gate 120, and the gate 120 is electrically connected to the scan line SL. The source electrode 132 and the drain electrode 134 are formed on the semiconductor layer 110 and are electrically connected to the semiconductor layer 110. In one embodiment, the insulating layer 125 is formed on the gate electrode 120 and the gate insulating layer 115, and the source electrode 132 and the drain electrode 134 are respectively filled into the opening O1 and the opening O2 in the insulating layer 125 and electrically connected to the semiconductor layer 110. The source electrode 132 is electrically connected to the data line DL.

In this embodiment, the active device TFT is fabricated by, for example, LTPS (Low Temperature Poly-silicon) technology, but the invention is not limited to this. The present invention can also use other types of active device TFTs or other methods of manufacturing active device TFTs.

In this embodiment, the scan line SL has a scan line slit 120O, and the scan line slit 120O of the scan line SL overlaps a part of the thin line P1. In this embodiment, each scan line SL has a plurality of scan line slits 120O, and each scan line slit 120O corresponds to a pixel area PR, but the invention is not limited to this. In other embodiments, multiple scan line slits 120O may correspond to one pixel area PR, or one scan line slit 120O may correspond to multiple pixel areas PR. In this embodiment, the extension direction of the scan line slit 120O is substantially parallel to the extension direction D2 of the corresponding scan line SL. In one embodiment, the width A1 of the scan line SL is, for example, between 1 μm and 6 μm, and the width W2 of the scan line slit 120O is, for example, between 0.2 μm and 0.6 μm. In one embodiment, the width W2 of the scan line slit 120O is substantially 1% to 50% of the width A1 of the corresponding scan line SL. The width W2 of the scan line slit 120O is measured in the same direction as the width A1 of the scan line SL, for example, measured in a direction perpendicular to the extension direction D2 of the scan line SL.

In this embodiment, the data line DL has a data line slit 130O, and the data line slit 130O of the data line DL overlaps a part of the thin line P1. In this embodiment, each data line DL has, for example, a plurality of data line slits 130O, and each data line slit 130O corresponds to a pixel area PR, but the invention is not limited to this. In other embodiments, multiple data line slits 130O may correspond to one pixel area PR, or one data line slit 130O may correspond to multiple pixel areas PR. In this embodiment, the extending direction of the data line slit 130O is substantially parallel to the extending direction D1 of the corresponding data line DL. In one embodiment, the width A2 of the data line DL is, for example, between 1 μm and 6 μm, and the width W3 of the data line slit 130O is, for example, between 0.2 μm and 0.6 μm. In one embodiment, the width W3 of the data line slit 130O is substantially 1% to 50% of the width A2 of the corresponding data line DL. The width W2 of the data line slit 130O is measured in the same direction as the width A2 of the data line DL, for example, measured in a direction perpendicular to the extending direction D1 of the data line DL. In one embodiment, the data line DL is zigzag. For example, the extension direction of the data line DL on the upper and lower sides of each scan line SL has an angle, and the data corresponding to the pixel area PR in the adjacent row The lines DL have different extension directions, but the invention is not limited to this. In some embodiments, the data line DL has only one extension direction, and the extension direction D1 is, for example, perpendicular to the extension direction D2.

In this embodiment, the first electrode 140A is a pixel electrode. The first electrode 140A is located in the pixel region PR and is electrically connected to the drain electrode 134 of the active device TFT. In one embodiment, the insulating layer 135 is formed on the source electrode 132 and the drain electrode 134, and the insulating layer 135 has an opening O3. The first electrode 140A fills the opening O3 and is electrically connected to the drain electrode 134. The first electrode 140A overlaps a part of the thin line P1. The first electrode 140A has a plurality of electrode slits 140O. In this embodiment, the extending direction of the electrode slit 140O is parallel to the extending direction D1 of the corresponding data line DL, but the invention is not limited to this. In other embodiments, there is an angle between the extending direction of the electrode slit 140O and the extending direction D1 of the data line DL. In an embodiment, the electrode slit 140O may have another extension direction different from the extension direction D1 at a position close to the scan line SL, and another extension is designed at a position where the electrode slit 140O is close to the scan line SL. The direction can further help the alignment of the liquid crystal. In an embodiment, the included angle between the lower polarization slit P10 and the corresponding electrode slit 140O is between -15 degrees and 15 degrees or between 75 degrees and 105 degrees.

In this embodiment, the array substrate 10 includes a plurality of second electrodes 140B (illustration omitted in FIG. 1A). The second electrode 140B overlaps the first electrode 140A, and an insulating layer 137 is sandwiched between the second electrode 140A and the first electrode 140A. The second electrode 140B has an opening O4 at a position corresponding to the opening O3, and therefore, the first electrode 140A does not contact the second electrode 140B. In this embodiment, the second electrode 140B is a common electrode, and the second electrode 140B is electrically connected to the common line CL in the peripheral region BR. For example, the common line CL and the data line DL belong to the same film layer, that is, are formed by patterning the same material layer. In this embodiment, the first electrode 140A is located above the second electrode 140B, but the invention is not limited to this. In other embodiments, the first electrode 140A is located below the second electrode 140B.

A lower alignment material layer 150 is formed, and the lower alignment material layer 150 covers, for example, the first electrode 140A, the second electrode 140B, the active device TFT, and the lower polarization pattern PL. The lower alignment material layer 150 is located above the lower polarizing pattern PL, for example. In one embodiment, the method for forming the lower alignment material layer 150 includes, for example, a spin coating method, concave/convex plate printing, or inkjet printing. In one embodiment, the lower alignment material layer 150 includes, for example, polyimide or other suitable polymer materials.

A light source module (not shown) is provided, and the lower polarizing pattern PL is located between the light source module and the lower alignment material layer 150. The light source module can emit unpolarized light UV, for example, and the light UV includes ultraviolet light, for example. In this embodiment, the light UV is irradiated from bottom to top, for example, enters the inside of the array substrate 10 from one side of the substrate B1. The light UV is transformed into polarized light after passing through the lower polarizing pattern PL, and then the lower alignment material layer 150 is photo-aligned, so that the lower alignment material layer 150 is transformed into an alignment layer (not labeled).

In this embodiment, the lower polarizing pattern PL of the array substrate 10 itself is used to polarize the light UV emitted by the light source module, so there is no need to install a polarizer on the optical alignment machine. Therefore, the problem of insufficient accumulated light in some areas can be solved. In this embodiment, the scan line SL and the data line DL and the lower polarization pattern PL are in different layers, and part of the scan line SL and part of the data line DL overlap the thin line P1. Therefore, the light UV passing through the lower polarization pattern PL irradiates the scan line SL and the data line DL. Since the scan line SL has a scan line slit 120O and the data line DL has a data line slit 130O. Therefore, the light UV emitted by the light source module can pass through the scan line slit 120O and the data line slit 130O, so that the lower alignment material layer 150 overlapping the scan line SL and the data line DL can also be irradiated by the light UV. The alignment quality around the scan line SL and the data line DL is improved.

2 is a schematic cross-sectional view of an array substrate 20 according to an embodiment of the invention. It must be noted here that the embodiment of FIG. 2 uses the element numbers and part of the content of the embodiment of FIGS. 1A and 1B, wherein the same or similar reference numbers are used to indicate the same or similar elements, and the same technical content is omitted. Description. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.

Please refer to FIG. 2. In this embodiment, the lower polarization pattern PL is disposed on the outer side of the substrate B1. In other words, the lower polarizing pattern PL and the shielding layer 100 in this embodiment are respectively located on opposite sides of the substrate B1, and the lower polarizing pattern PL and the shielding layer 100 are not formed in the same process.

The array substrate 20 of the present embodiment includes a lower polarizing pattern PL, and the lower polarizing pattern PL of the array substrate 20 itself is used to polarize the light UV emitted by the light source module without a polarizer on the optical alignment machine. Therefore, the problem of insufficient accumulated light in some areas can be solved. In this embodiment, the scan line SL and the data line DL and the lower polarization pattern PL are in different layers, and part of the scan line SL and part of the data line DL overlap the thin line P1. Therefore, the light UV passing through the lower polarization pattern PL irradiates the scan line SL and the data line DL. Since the scan line SL has a scan line slit 120O and the data line DL has a data line slit 130O. Therefore, the light UV emitted by the light source module can pass through the scan line slit 120O and the data line slit 130O, so that the lower alignment material layer 150 overlapping the scan line SL and the data line DL can also be irradiated by the light UV. The alignment quality around the scan line SL and the data line DL is improved.

3 is a schematic cross-sectional view of an array substrate 30 according to an embodiment of the invention. It must be noted here that the embodiment of FIG. 3 uses the element numbers and part of the content of the embodiment of FIGS. 1A and 1B, wherein the same or similar reference numbers are used to represent the same or similar elements, and the same technical content is omitted. Description. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.

Please refer to FIG. 3, in this embodiment, the lower polarization pattern PL, the scan line SL and the gate 120 belong to the same film layer. In one embodiment, the lower polarizing pattern PL, the scan line SL and the gate electrode 120 are formed in the same process, for example, and the forming method is, for example, a nanoimprinting process or an exposure etching process. In this embodiment, since the light UV passing through the lower polarization pattern PL does not pass through the scan line SL, it is not necessary to additionally provide a slit on the scan line SL.

The array substrate 30 of this embodiment includes a lower polarizing pattern PL, and the lower polarizing pattern PL of the array substrate 30 itself is used to polarize the light UV emitted by the light source module, without the need to install a polarizer on the optical alignment machine. Therefore, the problem of insufficient accumulated light in some areas can be solved. In this embodiment, the data line DL and the lower polarizing pattern PL belong to different layers, and a part of the data line DL overlaps the thin line P1. Therefore, the light UV passing through the lower polarizing pattern PL irradiates the data line DL. The data line DL has a data line slit 130O. Therefore, the light UV emitted by the light source module can pass through the data line slit 130O, so that the lower alignment material layer 150 overlapping the data line DL can also be irradiated by the light UV, which improves the alignment quality around the data line DL.

4 is a schematic top view of an array substrate 40 according to an embodiment of the invention. It must be noted here that the embodiment of FIG. 4 uses the element numbers and part of the content of the embodiment of FIGS. 1A and 1B, wherein the same or similar numbers are used to represent the same or similar elements, and the same technical content is omitted. Description. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.

Referring to FIG. 4, in this embodiment, each data line DL has a data line slit 130O, and the extending direction of the data line slit 130O is the extending direction D1 of the data line DL. In one embodiment, the data line slit 130O penetrates the source electrode 132, for example. In this embodiment, each scan line SL has a scan line slit 120O, and the extension direction of the scan line slit 120O is the extension direction D2 of the scan line SL. In one embodiment, the scan line slit 120O passes through the gate 120, for example. Since the scan line slit 120O and the data line slit 130O in this embodiment occupy a larger area, more light UV can pass through the slits of the scan line SL and the data line DL and interact with the lower alignment material layer. 150 for optical alignment.

The array substrate 40 of this embodiment includes a lower polarizing pattern PL, and the lower polarizing pattern PL of the array substrate 40 itself is used to polarize the light UV emitted by the light source module, and no polarizer is required on the optical alignment machine. Therefore, the problem of insufficient light accumulation in some areas of the panel can be solved. In this embodiment, the scan line SL and the data line DL and the lower polarization pattern PL are in different layers, and part of the scan line SL and part of the data line DL overlap the thin line P1. Therefore, the light UV passing through the lower polarization pattern PL irradiates the scan line SL and the data line DL. Since the scan line SL has a scan line slit 120O and the data line DL has a data line slit 130O. Therefore, the light UV emitted by the light source module can pass through the scan line slit 120O and the data line slit 130O, so that the lower alignment material layer 150 overlapping the scan line SL and the data line DL can also be irradiated by the light UV. The alignment quality around the scan line SL and the data line DL is improved.

FIG. 5A is a schematic top view of an array substrate 50 according to an embodiment of the invention. Fig. 5B is a schematic cross-sectional view of the section line BB' in Fig. 5A. It must be noted here that the embodiments of FIGS. 5A and 5B use the element numbers and part of the content of the embodiments of FIGS. 1A and 1B, wherein the same or similar numbers are used to denote the same or similar elements, and the same elements are omitted. Description of technical content. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.

Referring to FIGS. 5A and 5B at the same time, the array substrate 50 includes a base B2, a black matrix BM, an upper polarization pattern PU, and a color filter element 210.

The black matrix BM and the color filter element 210 are formed on the substrate B2. The color filter element 210 includes, for example, a plurality of filter patterns of different colors, such as a red filter pattern, a blue filter pattern, a green filter pattern, and a yellow filter pattern. The black matrix BM separates filter patterns of different colors, for example. In one embodiment, the black matrix BM includes a first block 200A extending along the extension direction D2 and a second block 200B extending along the extension direction D1, and the first block 200A and the second block 200B are interlaced with each other. In an embodiment, the first block 200A of the black matrix BM is disposed corresponding to the scan line SL, and the second block 200B of the black matrix BM is disposed corresponding to the data line DL, for example.

In an embodiment, the first block 200A of the black matrix BM has a plurality of first slits 200OA, and the second block 200B of the black matrix BM has a plurality of second slits 200OB. The extending direction of the first slit 200OA is, for example, the same as the extending direction D2 of the first block 200A, and the extending direction of the second slit 200OB is the same as the extending direction D1 of the second block 200B. The extension direction of the second slit 200OB is staggered with the extension direction of the first slit 200OA. The width A3 of the first block 200A is, for example, between 1 μm and 8 μm, and the width W4 of the first slit 200OA is, for example, between 0.2 μm and 0.6 μm. In one embodiment, the width W4 of the first slit 200OA is substantially 1% to 50% of the width A3 of the corresponding first block 200A. The measuring direction of the width W4 of the first slit 200OA and the width A3 of the first block 200A is the same, for example, measured in the direction perpendicular to the extending direction D2. The width A4 of the second block 200B is, for example, between 1 μm and 8 μm, and the width W5 of the second slit 200OB is, for example, between 0.2 μm and 0.6 μm. In one embodiment, the width W5 of the second slit 200OB is substantially 1% to 50% of the width A4 of the corresponding second block 200B. The width W5 of the second slit 200OB is measured in the same direction as the width A4 of the second block 200B, for example, measured in the direction perpendicular to the extending direction D1.

An upper polarizing pattern PU is formed on the substrate B2. In one embodiment, an insulating layer 215 is provided between the upper polarizing pattern PU and the black matrix BM. In an embodiment, the upper polarization pattern PU includes a plurality of thin lines P2 parallel to each other, for example. In one embodiment, the upper polarization pattern P2 has a plurality of parallel upper polarization slits P2O, and the width W6 of the upper polarization slits P2O is approximately between 15 nm and 120 nm. At least part of the thin line P2 overlaps the black matrix BM and the color filter element 210. In an embodiment, at least part of the thin lines P2 overlaps the first slit 200OA and the second slit 200OB of the black matrix BM.

An upper alignment material layer 250 is formed, and the upper alignment material layer 250 covers, for example, the upper polarization pattern PU, the black matrix BM, and the color filter element 210. In an embodiment, the method for forming the upper alignment material layer 250 is, for example, spin coating, concave/convex printing, or inkjet printing. In one embodiment, the upper alignment material layer 250 includes polyimide or other suitable polymer materials, for example.

A light source module is provided, and the upper polarization pattern PU is located between the light source module and the upper alignment material layer 250. The light source module can emit unpolarized light UV, for example, and the light UV includes ultraviolet light, for example. In this embodiment, the light UV is irradiated from top to bottom, for example, enters the array substrate 50 from the outer side of the substrate B2. The light UV will be converted into polarized light after passing through the upper polarization pattern PU, and then the upper alignment material layer 250 is photo-aligned, so that the upper alignment material layer 250 is transformed into an alignment layer.

The array substrate 50 of this embodiment includes an upper polarizing pattern PU. The upper polarizing pattern PU of the array substrate 50 itself is used to polarize the light UV emitted by the light source module, and it is not necessary to install a polarizer on the optical alignment machine. Therefore, the problem of insufficient accumulated light in some areas can be solved. In this embodiment, the black matrix BM and the upper polarizing pattern PU belong to different film layers, and part of the black matrix BM overlaps the thin line P2. Therefore, the light UV passing through the upper polarization pattern PU irradiates the black matrix BM. Since the black matrix BM has a first slit 200OA and a second slit 200OB. Therefore, the light UV emitted by the light source module can pass through the first slit 200OA and the second slit 200OB, so that the upper alignment material layer 250 overlapping the black matrix BM can also be irradiated by the light UV, which improves the black matrix Alignment quality around BM.

FIG. 6 is a schematic cross-sectional view of an array substrate 60 according to an embodiment of the invention. It must be noted here that the embodiment of FIG. 6 uses the element numbers and part of the content of the embodiment of FIG. 5A and FIG. 5B, wherein the same or similar reference numbers are used to indicate the same or similar elements, and the same technical content is omitted. Description. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.

Please refer to FIG. 6. In this embodiment, the upper polarizing pattern PU is disposed on the outer side of the substrate B2. In other words, the upper polarization pattern PU and the black matrix BM in this embodiment are respectively located on opposite sides of the substrate B2.

The array substrate 60 of this embodiment includes an upper polarization pattern PU, and the upper polarization pattern PU of the array substrate 60 itself is used to polarize the light UV emitted by the light source module, without the need for a polarizer on the optical alignment machine. Therefore, the problem of insufficient accumulated light in some areas can be solved. In this embodiment, the black matrix BM and the upper polarizing pattern PU belong to different film layers, and part of the black matrix BM overlaps the thin line P2. Therefore, the light UV passing through the upper polarization pattern PU irradiates the black matrix BM. Since the black matrix BM has a first slit 200OA and a second slit 200OB. Therefore, the light UV emitted by the light source module can pass through the first slit 200OA and the second slit 200OB, so that the upper alignment material layer 250 overlapping the black matrix BM can also be irradiated by the light UV, which improves the black matrix Alignment quality around BM.

FIG. 7 is a schematic cross-sectional view of a panel according to an embodiment of the invention. It must be noted here that the embodiment of FIG. 7 follows the component numbers and part of the content of the embodiment of FIG. 1A, FIG. 1B, FIG. 5A, and FIG. 5B, wherein the same or similar reference numbers are used to indicate the same or similar components, and The description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.

Please refer to FIG. 7, the panel includes an array substrate 10 and an array substrate 60, but the present invention is not limited to this. The array substrate 10 in the panel can be replaced with the array substrate 20, 30 or 40 in the above-mentioned embodiment. The array in the panel The substrate 60 can be replaced with the array substrate 50 in the above-mentioned embodiment. The sealant S bonds the array substrate 10 and the array substrate 60. The sealant S is, for example, located in the peripheral area BR of the panel. In an embodiment, the black matrix BM of the array substrate 60 overlaps the scan line SL and the data line DL of the array substrate 10, and the first slit 200OA of the black matrix BM is substantially parallel to the extension direction D2 of the scan line SL, and is black The extension direction of the second slit 200OB of the matrix BM is substantially parallel to the extension direction D1 of the data line DL.

In an embodiment, there are a plurality of liquid crystal molecules LC between the array substrate 10 and the array substrate 60. In this embodiment, the liquid crystal molecules LC are exemplified by liquid crystal molecules that can be rotated or switched by a horizontal electric field, or liquid crystal molecules that can be rotated or switched by a vertical electric field, but are not limited thereto.

The polarization pattern P includes a lower polarization pattern PL and an upper polarization pattern PU, and the alignment material layer includes a lower alignment material layer 150 and an upper alignment material layer 250. In one embodiment, before the light UV emitted from the light source module passes through the lower polarizing pattern PL to align the lower alignment material layer 150, and before the light UV emitted from the light source module passes through the upper polarizing pattern PU to align the upper alignment material Before the layer 250 is photo-aligned, the array substrate 10 and the array substrate 60 are bonded with the sealant S, but the invention is not limited to this. In other embodiments, after the light UV emitted from the light source module passes through the lower polarizing pattern PL to photo-align the lower alignment material layer 150, and the light UV emitted from the light source module passes through the upper polarizing pattern PU to align the upper alignment material After the layer 250 is photo-aligned, the array substrate 10 and the array substrate 60 are bonded with the sealant S.

In this embodiment, the array substrate 60 has a black matrix BM and a color filter element 210, but the invention is not limited to this. In other embodiments, the black matrix BM and the color filter element 210 may be located on the array substrate 10 to form a color filter on array (COA) structure. The array substrate 60 may not include Black matrix BM and color filter element 210.

The array substrate of at least one embodiment of the present invention includes a polarizing pattern. The polarizing pattern of the array substrate itself is used to polarize the light emitted by the light source module, without the need for a polarizer on the optical alignment machine. Therefore, the problem of insufficient accumulated light in some areas can be solved.

In one embodiment, the scan lines and the data lines and the polarized patterns are in different layers, and some of the scan lines and some of the data lines overlap with the thin lines of the polarized patterns. Therefore, the light passing through the polarized pattern will irradiate the scan line and the data line. In this embodiment, the scan line has scan line slits and/or the data line has data line slits. Therefore, the light emitted by the light source module can pass through the scan line slit and the data line slit, so that the alignment material layer overlapping the scan line and the data line can also be irradiated by the light, which improves the periphery of the scan line and the data line The alignment quality.

In an embodiment, the black matrix has a first slit and a second slit. Therefore, the light emitted by the light source module can pass through the first slit and the second slit, so that the alignment material layer overlapping the black matrix can also be illuminated by the light, which improves the alignment quality around the black matrix.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.

10, 20, 30, 40, 50‧‧‧Array substrate 150、250‧‧‧Alignment material layer 100‧‧‧Shielding layer 105, 125, 135, 137, 215‧‧‧Insulation layer 110‧‧‧Semiconductor layer 115‧‧‧Gate insulation layer 120‧‧‧Gate 120O, 130O, 140O, P1O, P2O, 200OA, 200OB‧‧‧Slit 132‧‧‧Source 134‧‧‧Dip pole 140A, 140B‧‧‧electrode 200A, 200B‧‧‧block 210‧‧‧Color filter element A1, A2, A3, A4, W1, W2, W3, W4, W5, W6‧‧‧Width B1, B2‧‧‧Base BM‧‧‧Black matrix BR‧‧‧ Surrounding area CL‧‧‧Common Line D1, D2‧‧‧direction DL‧‧‧Data line LC‧‧‧Liquid crystal molecules O1, O2, O3, O4‧‧‧Opening P, PL, PU‧‧‧Polarized pattern PR‧‧‧Pixel area P1, P2‧‧‧Thin line S‧‧‧Sealant SL‧‧‧Scan line TFT‧‧‧Active component UV‧‧‧Light

FIG. 1A is a schematic top view of an array substrate according to an embodiment of the invention. FIG. 1B is a schematic cross-sectional view of the section line AA' in FIG. 1A and a partial peripheral area of the array substrate. 2 is a schematic cross-sectional view of an array substrate according to an embodiment of the invention. 3 is a schematic cross-sectional view of an array substrate according to an embodiment of the invention. FIG. 4 is a schematic top view of an array substrate according to an embodiment of the invention. FIG. 5A is a schematic top view of an array substrate according to an embodiment of the invention. Fig. 5B is a schematic cross-sectional view of the section line BB' in Fig. 5A. 6 is a schematic cross-sectional view of an array substrate according to an embodiment of the invention. FIG. 7 is a schematic cross-sectional view of a panel according to an embodiment of the invention.

10‧‧‧Array substrate

100‧‧‧Shielding layer

110‧‧‧Semiconductor layer

120‧‧‧Gate

120O, 130O, 140O, P1O‧‧‧Slit

132‧‧‧Source

134‧‧‧Dip pole

140A‧‧‧electrode

A1, A2, W1, W2, W3‧‧‧Width

D1, D2‧‧‧direction

DL‧‧‧Data line

O1, O2, O3‧‧‧Opening

P1‧‧‧Thin line

PL‧‧‧Polarized light pattern

PR‧‧‧Pixel area

SL‧‧‧Scan line

Claims (5)

An array substrate includes: a base; a plurality of scan lines and a plurality of data lines are located on the base; a plurality of active elements are respectively electrically connected to the scan lines and the data lines; a plurality of first electrodes and a bottom A polarization pattern, the lower polarization pattern overlaps the first electrodes, and the lower polarization pattern has a plurality of parallel lower polarization slits; and a lower alignment material layer overlaps the first electrodes, the active devices, and the The scan lines and the data lines, wherein: at least one of the scan lines has a scan line slit, the scan line slit does not overlap the data lines in a normal direction of the substrate, and The lower polarizing pattern overlaps, and the portion of the lower alignment material layer overlapping the scan line slit has been photo-aligned. The array substrate according to the first item of the scope of patent application, wherein the first electrodes have a plurality of electrode slits, and the angle formed by one of the lower polarization slits and the corresponding one of the electrode slits is − 15 degrees to 15 degrees or 75 degrees to 105 degrees. The array substrate according to claim 1, wherein at least one of the scan lines has the scan line slit, and the extension direction of the scan line slit is substantially parallel to the extension direction of the corresponding scan line, The width of the scan line slit is substantially 1% to 50% of the width of the scan line, and the lower polarized light pattern and the scan lines belong to different layers. The array substrate according to item 1 or item 3 of the scope of patent application, wherein at least one of the data lines has a data line slit, the data line slit overlaps the lower polarized light pattern, and the data line slit The extension direction of the data line is substantially parallel to the extension direction of the corresponding data line, the width of the data line slit is substantially 1% to 50% of the width of the corresponding data line, and the lower polarization pattern and the data lines Belong to different layers. An array substrate includes: a base; a plurality of scan lines and a plurality of data lines are located on the base; a plurality of active elements are respectively electrically connected to the scan lines and the data lines; a plurality of first electrodes and a bottom A polarization pattern, the lower polarization pattern overlaps the first electrodes, and the lower polarization pattern has a plurality of parallel lower polarization slits; and a lower alignment material layer overlaps the first electrodes, the active devices, and the The scan lines and the data lines, wherein: at least one of the scan lines has a scan line slit, the scan line slit does not overlap the data lines in a normal direction of the substrate, and The lower polarizing patterns overlap, and the scan line slit is suitable for letting light pass through to perform photo-alignment on the lower alignment material layer.

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