TW201901815A - 接合裝置與接合方法 - Google Patents

接合裝置與接合方法 Download PDF

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Publication number
TW201901815A
TW201901815A TW107117079A TW107117079A TW201901815A TW 201901815 A TW201901815 A TW 201901815A TW 107117079 A TW107117079 A TW 107117079A TW 107117079 A TW107117079 A TW 107117079A TW 201901815 A TW201901815 A TW 201901815A
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Taiwan
Prior art keywords
bonding
electronic component
semiconductor die
stage
push
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TW107117079A
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English (en)
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TWI755536B (zh
Inventor
大谷哲也
渡辺治
中村智宣
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日商新川股份有限公司
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Publication of TW201901815A publication Critical patent/TW201901815A/zh
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    • H—ELECTRICITY
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/023—Thermo-compression bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/16—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
    • B23K20/233—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer
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    • C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
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Abstract

本發明精度良好地交接電子零件，並且降低來自工具的熱的影響。接合裝置1將具有設有凸塊電極106的第1主面102a的半導體晶粒102，經由熱壓接薄膜103而熱壓接至基板101。接合裝置1具備：中間載台3，具有以與第1主面102a面對的方式來載置半導體晶粒102的晶粒載置面3a；以及接合工具12，可裝卸地保持被載置於中間載台3的半導體晶粒102的、與第1主面102a為相反側的第2主面102b。中間載台3具有上推機構33，所述上推機構33對半導體晶粒102的第1主面102a提供沿著晶粒載置面3a的法線方向（Z軸方向）而使半導體晶粒102分離的力。

Description

接合裝置與接合方法
本發明是有關於一種接合（bonding）裝置與接合方法。
已知有將半導體晶粒（die）等電子零件接合於基板的技術。在接合電子零件時，首先，藉由工具（tool）來保持被載置於載台（stage）的電子零件後，使其移動至塗佈有黏著材的基板上。繼而，工具一邊將電子零件按壓至基板，一邊經由電子零件來對黏著材進行加熱。藉由該按壓與加熱，將電子零件機械及電性連接至基板。 [現有技術文獻] 專利文獻
專利文獻1：日本專利特開2012-174861號公報
[發明所欲解決之問題]
在接合動作中，工具要重複進行保持電子零件的步驟與進行按壓及加熱的步驟。如此，有可能會在工具溫度仍高的狀態下進行保持下個電子零件的步驟。另一方面，電子零件有時在載台中被載置於具有柔軟性的薄膜（film）上。一旦高溫的工具接觸至被載置於載台的電子零件，則工具的熱會經由電子零件而傳至薄膜。由於薄膜易受到熱的影響，因此可能會因高溫的工具而對電子零件從載台向工具的交接造成影響。具體而言，由於工具的熱，薄膜會因熱而熔融，因而薄膜會黏附於載台而對交接造成影響。
例如，在專利文獻1中，揭示有一種較佳地交接半導體晶片的技術。該技術中，使作為工具的吸附部件靠近半導體晶片（chip）。此時，吸附部件不接觸至半導體晶片。繼而，藉由從設於吸附部件的抽吸孔抽吸空氣，從而吸起半導體晶片。
然而，若欲藉由吸附部件來吸起半導體晶片，則在吸起時可能發生半導體晶片的旋轉、位置偏離。藉由使工具與半導體晶粒靠近地吸附，可抑制半導體晶片的旋轉、位置偏離，但因靠近，來自工具的熱會傳至半導體晶片、薄膜及交接部，其結果，薄膜會黏附於交接部。另一方面，若為了抑制薄膜與交接部的黏附而加大工具與半導體晶粒的間隔，則半導體晶片的旋轉、位置偏離會變大，從而無法精度良好地進行半導體晶粒的交接。
本發明是有鑒於此種情況而完成，其目的在於提供一種接合裝置與接合方法，可精度良好地交接電子零件，並且可降低來自工具的熱的影響。 [解決問題之手段]
本發明的一形態是一種接合裝置，其將具有設有多個電極部的電極面的電子零件經由熱壓接薄膜，而熱壓接至基板或其他電子零件，所述接合裝置包括：載台，具有以與電極面面對的方式來載置電子零件的載置面；以及接合工具，可裝卸地保持被載置於載台的電子零件的、與電極面為相反側的主面，載台具有上推部，所述上推部對電子零件的電極面提供沿著載置面的法線方向而使電子零件分離的力。
接合裝置在將載置於載台的電子零件交給接合工具時，藉由上推部來從載台上推電子零件。該上推部對電子零件提供使電子零件朝向接合工具移動的力。借助基於此種力的電子零件的移動，可維持電子零件的姿勢並使其朝向接合工具移動。因而，可抑制電子零件的旋轉或位置偏離，從而精度良好地交接電子零件。進而，在電子零件離開載台的時機（timing），於接合工具與電子零件之間產生間隙。該間隙相對於從接合工具向電子零件的熱移動而成為熱阻。因而，可降低接合工具可能對電子零件造成的熱影響。 [發明之效果]
根據本發明，可精度良好地交接半導體晶片，並且可降低來自工具的熱的影響。
以下，一邊參照附圖，一邊詳細說明用於實施本發明的形態。在圖式的說明中，對於相同的元件標註相同的符號，並省略重複說明。
＜第1實施形態＞ 如圖1所示，接合裝置1在基板101的接合區域中，安裝作為電子零件的一例的半導體晶粒102。藉由該安裝，獲得具備基板101與半導體晶粒102的半導體裝置100。在以下的說明中，將彼此正交的X軸及Y軸設為與半導體晶粒102的主面（或任一載台的主面）平行的方向。Z軸是與X軸及Y軸這兩者垂直的方向。
首先，對藉由接合裝置1而裝配的半導體裝置100進行說明。如圖2所示，半導體裝置100具有基板101與半導體晶粒102。
基板101呈單片的板狀，具有第1主面101a與第2主面101b。在第1主面101a上，形成有搭載半導體晶粒102的至少一處搭載區域。因而，半導體晶粒102接合於基板101的第1主面101a。第2主面101b是第1主面101a的背面。基板101的材質例如為有機材料（例如環氧（epoxy）基板或聚醯亞胺（polyimide）基板）、無機材料（例如玻璃基板）或它們的複合材料（例如玻璃環氧基板）。基板101是所謂的轉接板（interposer）。
另外，搭載區域亦可在一片基板上設有多處。此時，將半導體晶粒102接合於基板的每個搭載區域。隨後，對應於每個搭載區域而將基板設為單片，藉此獲得多個半導體裝置100。而且，半導體裝置100亦可具有將多個半導體晶粒102積層而成的堆疊（stack）結構。堆疊型的半導體裝置亦可為二個以上的半導體晶粒102全部皆朝向相同的方向。而且，堆疊型的半導體裝置亦可為二個以上的半導體晶粒102朝向互不相同的方向。而且，半導體裝置100中，亦可將二個以上的半導體晶粒102接合於一處搭載區域。
半導體晶粒102是使用熱壓接薄膜103而固定於基板101。熱壓接薄膜103具有黏著於半導體晶粒102的晶粒黏著面103a、及接觸至基板101的基板黏著面103b。熱壓接薄膜103例如為熱固化性樹脂，是使半導體晶粒102的多個凸塊（bump）電極106間絕緣的絕緣性薄膜（Non-Conductive Film，NCF）。
半導體晶粒102俯視時呈比基板101小的單片的板狀，具有第1主面102a（電極面）及第2主面102b（主面）。在第1主面102a上，設有規定的電路圖案（pattern）。在第1主面102a上，進而設有多個電極墊（pad）104、多個凸塊電極106（多個電極部）及保護膜108。並且，第1主面102a是與基板101的第1主面101a面對。此種接合形態被稱作面朝下接合（face down bonding）。第2主面102b是與第1主面102a相反的背面。半導體晶粒102包含矽等半導體材料。
電極墊104是與形成於第1主面102a的電極墊107電性連接。凸塊電極106設於電極墊104上。保護膜108設於多個凸塊電極106的周圍。換言之，電極墊104的外周端部由保護膜108予以包覆。另一方面，電極墊104的中央部從保護膜108露出。該露出的部分是與凸塊電極106的電性連接部。作為電極墊104及凸塊電極106的材質，例示具有導電性的材料。例如，電極墊104可包含鋁或銅等。而且，例如，凸塊電極106可包含金等。
接下來，對接合裝置1進行說明。如圖1所示，接合裝置1具有晶圓載台2（wafer stage）、中間載台3、接合載台4、接合單元6（bonding unit）、XY載台7、接合控制部（以下簡稱作「控制部8」）以及攝像部9。
晶圓載台2暫時載置晶圓110。晶圓110被固定於晶圓載台2的搭載面2a。該晶圓110包含經單片化的多個半導體晶粒102。晶圓110具有第1主面110a與第2主面110b。第1主面110a具有規定的電路圖案，對應於半導體晶粒102的第1主面102a。第2主面102b是與第1主面110a相反的背面，對應於半導體晶粒102的第2主面102b。
在中間載台3上，暫時載置黏貼有熱壓接薄膜103的半導體晶粒102。中間載台3被配置在晶圓載台2與接合載台4之間。中間載台3亦可為可藉由線性馬達（linear motor）（未圖示）等驅動機構而沿X軸方向及Y軸方向移動地構成的旋轉頭夾頭（rotary head collet）的一部分。
進一步詳細說明中間載台3。如圖3所示，中間載台3具有底座31（base）及上推機構33。底座31是中間載台3的基體。該底座31的主面是中間載台3的晶粒載置面3a。晶粒載置面3a是與熱壓接薄膜103的基板黏著面103b面對。
上推機構33朝法線方向（正的Z軸方向）上推半導體晶粒102。換言之，如圖3所示，上推機構33使熱壓接薄膜103的基板黏著面103b與底座31的晶粒載置面3a之間形成間隙D。上推機構33具有上推框34（上頂構件）與驅動部36。上推框34呈具有貫穿孔的長方體狀，具有：底座配置部34a，其是配置底座31的貫穿孔；以及抵接面34b（抵接部），抵接於熱壓接薄膜103的外周緣。抵接面34b面對於熱壓接薄膜103的基板黏著面103b，且可抵接於基板黏著面103b的外周緣部。如此，根據上推框34的面接觸的構成，可減小每單位面積的按壓力。在上推框34上連結有驅動部36。驅動部36是使上推框34沿法線方向（Z軸方向）往復移動者，例如例示氣缸（air cylinder）。
上推機構33在上推框34位於第1位置的狀態、與上推框34位於第2位置的狀態之間相互切換。該狀態的切換是藉由驅動部36基於從控制部8提供的控制信號的動作來實現。
所謂上推框34位於第1位置的狀態，是指上推框34的抵接面34b較底座31的晶粒載置面3a而位於下方的狀態（參照圖5（a））、或者相對於底座31的晶粒載置面3a而齊平的狀態。根據上推框34位於第1位置的狀態，半導體晶粒102維持被載置於晶粒載置面3a的狀態。
所謂上推框34位於第2位置的狀態，是指上推框34的抵接面34b較底座31的晶粒載置面3a而位於上方的狀態（參照圖5（b））。在此狀態下，上推框34的抵接面34b接觸至熱壓接薄膜103的基板黏著面103b。即，在熱壓接薄膜103的基板黏著面103b與底座31的晶粒載置面3a之間形成間隙D。該間隙D是基於中間載台3與接合工具12的間隔而設定。例如，可將基板黏著面103b與晶粒載置面3a之間的間隙D設定為，半導體晶粒102的第2主面102b接觸至接合工具12的接合面24。例如，間隙D亦可設定為下述範圍，即，當從中間載台3向接合工具12交接時，不會發生半導體晶粒102的旋轉或位置偏離。另外，此處所說的不會發生位置偏離，是指從中間載台3向接合工具12交接時產生的半導體晶粒102的旋轉或位置偏離收斂在容許範圍內。
在使半導體晶粒102從晶圓載台2向接合載台4移動的步驟中，首先從晶圓載台2拾取（pickup）半導體晶粒102。接下來，將半導體晶粒102上下反轉。即，最初，第1主面102a為上側而第2主面102b為下側，但藉由上下反轉，第2主面102b為上側而成為第1主面102a。半導體晶粒102在此狀態下載置於中間載台3。因而，被載置於中間載台3的半導體晶粒102的第1主面102a與中間載台3的晶粒載置面3a面對。
如圖1所示，接合載台4暫時載置接合中的基板101。在接合載台4的搭載面4a上，藉由真空吸附來固定基板101。此時，基板101的第1主面101a與接合載台4的搭載面4a面對。接合載台4是可藉由包含導軌（guide rail）的驅動機構（未圖示）來使基板101沿X軸方向移動地構成。而且，接合載台4具有用於對基板101進行加熱的加熱器（heater）。
接合單元6具有接合頭11（bonding head）、接合工具12、Z軸驅動機構13及攝像部14。接合頭11被安裝於XY載台7，且可沿X軸方向及Y軸方向移動。接合工具12經由Z軸驅動機構13而安裝於接合頭11。而且，攝像部14亦被安裝於接合頭11。即，當接合頭11藉由XY載台7而移動時，被安裝於接合頭11的接合工具12及攝像部14亦同樣移動。
攝像部14從接合工具12朝Y軸方向隔開規定距離。攝像部14對被載置於中間載台3的半導體晶粒102的第2主面102b進行攝像。而且，攝像部14對被載置於接合載台4的半導體晶粒102的第2主面102b進行攝像。另外，攝像部14亦可不固定於接合頭11。攝像部14亦可與接合工具12獨立地移動。
接合工具12具有接合前端部16。接合前端部16可裝卸地保持半導體晶粒102。接合前端部16是沿著Z軸方向延伸的接合工具12中的接合載台4側的端部。而且，接合工具12具有抽真空（air vacuum）功能及/或鼓風（air blow）功能。藉由該些功能，接合工具12可吸附或脫離半導體晶粒102。
控制部8控制接合裝置1的構成零件的動作。具體而言，控制部8與接合單元6、XY載台7、攝像部9、攝像部14等各構成之間可收發信號地連接，藉此來控制他們的動作。例如，控制部8是具備中央處理單元（Central Processing Unit，CPU）及記憶體（memory）等的電腦（computer）裝置。在記憶體中，預先保存有用於進行接合所需的處理的接合程式（program）等。控制部8是可執行與後述的本實施形態的半導體晶粒的接合方法相關的各步驟地構成。在控制部8上，連接有用於輸入控制資訊的操作部8a、及用於輸出控制資訊的顯示部8b。
控制部8進行接合單元6的位置控制（XYZ軸）、接合工具12的位置控制（Z軸）、接合工具12繞Z軸的位置控制（θ）、接合工具12的傾斜（tilt）控制（相對於Z軸的傾斜）。進而，控制部8進行抽真空功能及/或鼓風功能的開啟（ON）或關閉（OFF）控制、將半導體晶粒102安裝至基板101時的負荷控制、接合載台4及接合工具12的熱供給控制、及上推機構33的動作控制等。
＜接合方法＞ 接下來，參照圖4、圖5（a）及圖5（b）、圖6（a）及圖6（b）與圖7（a）及圖7（b）來說明利用接合裝置1的接合方法。本實施形態的接合方法是使用圖1所示的接合裝置1來進行。通過本實施形態的接合方法來製造半導體裝置100（參照圖2）。
首先，在晶圓載台2上，準備被設為單片的多個半導體晶粒102（S10）。具體而言，在晶圓載台2上，準備包含黏貼有熱壓接薄膜103的多個半導體晶粒102的晶圓110。晶圓110是以下述方向載置於晶圓載台2上，即，多個半導體晶粒102各自的第1主面102a朝向上方，並且第2主面102b面對於晶圓載台2。
接下來，將半導體晶粒102移送至中間載台3（S11）。例如，藉由與吸附工具及拾取單元（均未圖示）的協調動作，將晶圓載台2上的多個半導體晶粒102逐個地移送至中間載台3。繼而，控制部8控制XY載台7，以使接合工具12移動至中間載台3上。
接下來，實施藉由接合工具12來保持被載置於中間載台3的半導體晶粒102的步驟（S12）。如圖5（a）所示，控制部8控制Z軸驅動機構13，以使接合工具12朝負的Z軸方向移動。控制部8在接合面24與半導體晶粒102的第2主面102b之間的間隙接近規定距離（例如1 mm）時，停止移動。接下來，如圖5（b）所示，控制部8控制上推機構33，以上推半導體晶粒102（S12a）。控制部8在半導體晶粒102的第2主面102b接觸至接合面24時，停止上推動作。繼而，控制部8控制空壓系統（未圖示），以開始使用抽吸孔28的抽吸（步驟S12b）。藉由該抽吸，半導體晶粒102被保持於接合工具12。繼而，控制部8控制Z軸驅動機構13，以使接合工具12朝正的Z軸方向移動。而且，控制部8如圖6（a）所示，控制上推機構33，以使上推框34朝負的Z軸方向移動。即，使抵接面34b從熱壓接薄膜103的基板黏著面103b分離。
接下來，藉由接合工具12，將半導體晶粒102經由熱壓接薄膜103而熱壓接至基板101（S13）。
具體而言，首先，如圖6（b）所示，控制部8控制XY載台7，以使吸附有半導體晶粒102的接合工具12移動至接合載台4上。在接合載台4上配置有基板101。
如圖7（a）所示，控制部8對Z軸驅動機構13發送控制信號，藉此，使接合工具12朝向接合載台4下降。該下降動作持續至凸塊電極106接觸至基板101的第1主面101a為止。控制部8在偵測到凸塊電極106對基板101的接觸時，將接合工具12的下降動作切換為負荷控制，將規定的負荷施加至凸塊電極106及熱壓接薄膜103。而且，控制部8對加熱器18發送控制信號，藉此開始加熱。該加熱動作既可在進行下降動作的期間開始，亦可在下降動作結束後開始。藉由該下降動作與加熱動作，熱經由半導體晶粒102而傳向熱壓接薄膜103。藉由該熱及負荷，熱壓接薄膜103熱固化而將半導體晶粒102黏著於基板101，並且將凸塊電極106接合於基板101的電極。
如此，實現半導體晶粒102的凸塊電極106與基板101的配線（未圖示）的電性接合，與此同時，可對半導體晶粒102與基板101之間進行樹脂密封。
在半導體晶粒102向基板101的熱壓接結束後，如圖7（b）所示，使半導體晶粒102從接合面24脫離（S14）。具體而言，首先，將抽吸孔28的抽吸動作設為關閉狀態。隨後，控制部8控制Z軸驅動機構13，以使接合工具12朝正的Z軸方向移動。藉由該些動作，可使半導體晶粒102從接合面24脫離。
以下，對本實施形態的接合裝置1與接合方法的作用效果進行說明。
接合裝置1在將載置於中間載台3的半導體晶粒102交給接合工具12時，藉由上推機構33來從中間載台3上推半導體晶粒102。該上推機構33對半導體晶粒102提供使半導體晶粒102朝向接合工具12移動的力。借助基於此種力的半導體晶粒102的移動，可維持半導體晶粒102的姿勢並使其朝向接合工具12移動。因而，可抑制半導體晶粒102的旋轉或位置偏離，從而精度良好地交接半導體晶粒102。進而，在半導體晶粒102離開中間載台3的時機，在接合工具12與半導體晶粒102之間產生間隙D。該間隙D相對於從接合工具12向半導體晶粒102的熱移動而成為熱阻。因而，可降低接合工具12可能對半導體晶粒102造成的熱影響。
換言之，在接合裝置1中，當半導體晶粒102被保持於接合工具12時，接合工具12的熱會經由半導體晶粒102而傳向熱壓接薄膜103。其結果，熱壓接薄膜103的黏（tack）性上升。然而，此時，半導體晶粒102已從中間載台3分離，因此半導體晶粒102不會黏附於中間載台3。因而，即使接合工具12為高溫，亦可進行以接合工具12來保持中間載台3上的半導體晶粒102的作業。藉此，可縮短用於冷卻接合工具12的時間，因此可縮短接合作業所需的時間。甚而，根據接合裝置1與接合方法，可提高半導體裝置100的生產性。
圖8（a）表示接合面24的溫度歷程。圖8（a）的圖表G1中的橫軸表示經過時間，縱軸表示接合面24的溫度。另外，圖表G1所示的溫度歷程為例示，本實施形態的接合裝置1的動作並不限定於圖表所示的溫度歷程。該圖表G1是包含將半導體晶粒102晶粒接合（die bond）至基板101的步驟（S13）的前後的期間內的、接合面24的溫度歷程。具體而言，在0秒時，接合工具12保持著半導體晶粒102（S12）。接下來，在從0秒至1秒為止的期間，將半導體晶粒102按壓至基板101並且進行加熱（S13）。接下來，在從1秒至3秒為止的期間，將接合面24維持為規定溫度（S13）。在此期間，將半導體晶粒102接合至基板101。接下來，在3秒以後的期間，從接合工具12分離半導體晶粒102（S14），並且停止加熱。即，在3秒以後的期間，半導體晶粒102未被保持於接合面24。而且，由於停止了加熱，因此接合面24的溫度逐漸下降。然後，接合工具12實施保持下個半導體晶粒102的步驟（S12）。
此處，藉由未圖示的搬送機構，將第1主面102a黏貼有熱壓接薄膜103的半導體晶粒102搬送至中間載台3。該半導體晶粒102是在將半導體晶粒102接合於基板101之後，由未經充分冷卻的接合工具12予以吸附保持。
因此，當為了利用接合工具12來保持半導體晶粒102而使接合面24接觸至半導體晶粒102時，接合工具12的熱會經由半導體晶粒102而傳至熱壓接薄膜103。因該熱移動，熱壓接薄膜103的黏性上升，熱壓接薄膜103黏附於底座31而變得難以剝離。因而，為了保持黏貼有熱壓接薄膜103的半導體晶粒102，考慮使接合工具12的溫度下降至不會對熱壓接薄膜103的黏性造成影響的程度。例如，若停止加熱器18的加熱，則接合工具12會自然冷卻。因此，考慮在步驟S14與步驟S12之間設置接合工具12的冷卻期間。然而，該冷卻期間會導致接合作業所需的時間延長。
為了縮短接合作業所需的時間，只要使得儘管接合工具12為高溫，但仍能保持半導體晶粒102即可。例如，於考慮到熱壓接薄膜103的黏性的情況下，設用於保持半導體晶粒102的溫度條件為50度。如此，根據圖表G1，停止加熱後必須待機至少3秒鐘。另一方面，若設溫度條件為比50度高的100度，則只要在停止加熱後待機1秒即可。即，待機時間縮短2秒。
圖8（b）表示從接合面24直至半導體晶粒102為止的距離、與半導體晶粒102的溫度的關係的一例。接合面24的溫度被設定為200℃。根據圖表G2可知，在從接合面24直至半導體晶粒102為止的距離為零（即接觸狀態）的情況下，半導體晶粒102的溫度與接合面24的溫度（200℃）相同。另一方面，若從接合面24直至半導體晶粒102為止的距離為1 mm以上，則半導體晶粒102的溫度下降至50℃以下。即，藉由控制上推機構33上推半導體晶粒102的高度（即間隙D），便可控制使接合面24靠近半導體晶粒102時的半導體晶粒102及熱壓接薄膜103的溫度。
因而，在接合面24與半導體晶粒102的間隔為1 mm以上的構成中，只要使半導體晶粒102從中間載台3隔開，便不會產生因黏性提高引起的黏附問題。如此，只要設為將半導體晶粒102抬起1 mm以上的構成，即便接合面24為200℃，亦可將半導體晶粒102保持於接合工具12。
另外，圖8（a）所示的圖表G1或圖8（b）所示的圖表G2為例示。本實施形態的接合裝置1並不限定於圖表G1、圖表G2或所述的數值。
＜第2實施形態＞ 如圖9所示，第2實施形態的接合裝置1A例如用於第1主面設有熱壓接薄膜103的半導體晶粒102的交接。接合裝置1A具備中間載台3A。中間載台3A具有上推部33A。第2實施形態的上推機構33是直接接觸半導體晶粒102而物理上推者。第1實施形態的上推部33A並非直接接觸半導體晶粒102，而是藉由將氣體GS（gas）噴吹至半導體晶粒102來上推半導體晶粒102。
具體而言，中間載台3A包含在晶粒載置面3a上具有開口的多個氣孔3b（噴吹部）。在氣孔3b的另一端側，連接有提供作為氣體GS的壓縮空氣等的壓縮機5（compressor）。壓縮機5基於從控制部8提供的控制信號，向氣孔3b提供具有規定壓力與流速的壓縮空氣。壓縮空氣衝撞至設於半導體晶粒102的熱壓接薄膜103，而朝向接合面24上推半導體晶粒102。當半導體晶粒102接觸至接合面24時，控制部8開始接合工具12的抽吸動作，從而將半導體晶粒102保持於接合面24。
此時，由於在半導體晶粒102上設有熱壓接薄膜103，因此接合工具12的熱會傳至熱壓接薄膜103。然而，在熱傳遞的狀態下，熱壓接薄膜103已從中間載台3分離。因而，可抑制受到熱的影響而黏性上升的熱壓接薄膜103黏附至中間載台3。
以上，基於該實施形態詳細說明了本發明。然而，本發明並不限定於所述實施形態。本發明可在不脫離其主旨的範圍內進行各種變形。
例如，在直接接觸半導體晶粒102而上推的情況下，並不限定於框狀的上頂構件。例如，上頂構件亦可為分別抵接於半導體晶粒102的四角的四個上頂棒。
1、1A‧‧‧接合裝置
2‧‧‧晶圓載台
2a、4a‧‧‧搭載面
3、3A‧‧‧中間載台（載台）
3a‧‧‧晶粒載置面
3b‧‧‧氣孔
4‧‧‧接合載台
5‧‧‧壓縮機
6‧‧‧接合單元
7‧‧‧XY載台
8‧‧‧控制部
8a‧‧‧操作部
8b‧‧‧顯示部
9、14‧‧‧攝像部
11‧‧‧接合頭
12‧‧‧接合工具
13‧‧‧Z軸驅動機構
16‧‧‧接合前端部
18‧‧‧加熱器
24‧‧‧接合面
28‧‧‧抽吸孔
31‧‧‧底座
33‧‧‧上推機構
33A‧‧‧上推部
34‧‧‧上推框
34a‧‧‧底座配置部
34b‧‧‧抵接面
36‧‧‧驅動部
100‧‧‧半導體裝置（電子零件）
101‧‧‧基板
101a、102a、110a‧‧‧第1主面
101b、102b、110b‧‧‧第2主面
102‧‧‧半導體晶粒
103‧‧‧熱壓接薄膜
103a‧‧‧晶粒黏著面
103b‧‧‧基板黏著面
104、107‧‧‧電極墊
106‧‧‧凸塊電極（電極部）
108‧‧‧保護膜
110‧‧‧晶圓
D‧‧‧間隙
G1、G2‧‧‧圖表
GS‧‧‧氣體
S10～S14‧‧‧步驟
X、Y、Z‧‧‧軸方向
圖1是表示第1實施形態的接合裝置的構成的概略圖。 圖2是表示藉由圖1的接合裝置而裝配的半導體裝置的剖面的圖。 圖3是表示圖1所示的接合工具與中間載台的立體圖。 圖4是表示使用圖1所示的接合裝置的接合方法的主要步驟的圖。 圖5（a）及圖5（b）是表示圖4所示的一步驟的圖。 圖6（a）及圖6（b）是表示緊跟著圖5（a）及圖5（b）所示的步驟的另一步驟的圖。 圖7（a）及圖7（b）是表示緊跟著圖6（a）及圖6（b）所示的步驟的又一步驟的圖。 圖8（a）及圖8（b）是用於說明第1實施形態的接合裝置的作用效果的圖表。 圖9是表示第2實施形態的接合工具與中間載台的剖面圖。

Claims (4)

  1. 一種接合裝置，其將具有設有多個電極部的電極面的電子零件經由黏貼於所述電極面的熱壓接薄膜，而熱壓接至基板或其他電子零件，所述接合裝置包括： 載台，具有經由所述熱壓接薄膜來載置所述電子零件的載置面；以及 接合工具，可裝卸地保持被載置於所述載台的所述電子零件的、與所述電極面為相反側的主面， 所述載台具有上推部，所述上推部對所述電子零件的所述電極面提供沿著所述載置面的法線方向而使所述電子零件分離的力。
  2. 如申請專利範圍第1項所述的接合裝置，其中 所述上推部具有上頂構件，所述上頂構件包含抵接至所述電極面的抵接部，且所述上推部藉由所述上頂構件沿著所述法線方向往復移動，從而在第1位置與第2位置之間相互切換，所述第1位置是所述抵接部未抵接至被載置於所述載置面的所述電極面的位置，所述第2位置是所述抵接部抵接至所述電極面而使所述電子零件沿著所述法線方向從所述載置面分離的位置。
  3. 如申請專利範圍第1項所述的接合裝置，其中 所述上推部具有對所述電極面噴吹氣體的噴吹部。
  4. 一種接合方法，其將具有設有多個電極部的電極面的電子零件經由黏貼於所述電極面的熱壓接薄膜，而熱壓接至基板或其他電子零件，所述接合方法包括下述步驟： 在具有經由所述熱壓接薄膜來載置所述電子零件的載置面的載台上，載置所述電子零件；以及 使用接合工具來保持所述電子零件，所述接合工具可裝卸地保持被載置於所述載台的所述電子零件的、與所述電極面為相反側的主面， 保持所述電子零件的步驟包括下述步驟： 對所述電極面提供沿著所述載置面的法線方向的力，從而使所述電子零件從所述載台分離；以及 藉由所述接合工具來保持從所述載台分離的所述電子零件。
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