TW201900939A - Electrolytic copper foil, copper-clad laminate, printed wiring board, production method therefor, electronic device, and production method therefor - Google Patents

Electrolytic copper foil, copper-clad laminate, printed wiring board, production method therefor, electronic device, and production method therefor Download PDF

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TW201900939A
TW201900939A TW107114974A TW107114974A TW201900939A TW 201900939 A TW201900939 A TW 201900939A TW 107114974 A TW107114974 A TW 107114974A TW 107114974 A TW107114974 A TW 107114974A TW 201900939 A TW201900939 A TW 201900939A
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copper foil
less
layer
foil according
height
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TW107114974A
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犬飼賢二
小林洋介
飯田一彦
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日商Jx金屬股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60Electroplating characterised by the structure or texture of the layers
    • C25D5/605Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00Electroforming
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00Electroforming
    • C25D1/04Wires; Strips; Foils
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10Electroplating with more than one layer of the same or of different metals
    • C25D5/12Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
    • C25D5/14Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/06Wires; Strips; Foils
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern

Abstract

An electrolytic copper foil having a glossy surface and a deposition surface. This electrolytic copper foil has a roughened layer on the glossy surface side thereof. The root mean square height Sq of the glossy surface is no more than 0.550 [mu]m. The deposition surface side fulfills at least one condition among the following: (a) the surface roughness Sa is at least 0.115 [mu]m; (b) the root mean square height Sq is at least 0.120 [mu]m; (c) the maximum peak height Sp is at least 0.900 [mu]m; (d) the maximum valley depth Sv is at least 0.600 [mu]m; the maximum height Sz is at least 1.500 [mu]m; (f) the kurtosis Sku is 2.75-4.00; and (g) the skewness Ssk is 0.00-0.35.

Description

電解銅箔、覆銅積層板、印刷配線板及其製造方法、以及電子機器及其製造方法  Electrolytic copper foil, copper-clad laminate, printed wiring board, and manufacturing method thereof, and electronic device and manufacturing method thereof  

本發明係關於一種電解銅箔及其製造方法、覆銅積層板、印刷配線板及其製造方法、以及電子機器及其製造方法。 The present invention relates to an electrolytic copper foil, a method for producing the same, a copper clad laminate, a printed wiring board, a method of manufacturing the same, an electronic device, and a method of manufacturing the same.

印刷配線板一般經如下步驟而製造:使絕緣基板(例如樹脂基板)接著於銅箔而製成覆銅積層板之後,藉由蝕刻而於銅箔形成導體圖案(電路)。 The printed wiring board is generally manufactured by forming an insulating substrate (for example, a resin substrate) on a copper clad laminate after the copper foil, and then forming a conductor pattern (circuit) on the copper foil by etching.

近年來,伴隨著電子機器之小型化及高性能化需求之增大,搭載零件之高密度封裝化或信號之高頻化等不斷進展,對於印刷配線板,亦要求導體圖案之微細化(微間距化)或對應高頻等。 In recent years, with the increase in the demand for miniaturization and high performance of electronic devices, high-density encapsulation of mounted components, high-frequency signals, and the like have been progressing, and the printed wiring boards are required to be miniaturized. Spacing) or corresponding to high frequency.

因此,為了使用電解銅箔實現導體圖案之微細化,於專利文獻1中提出有將作為光澤劑而發揮作用之含硫化合物等添加劑添加至電解液而製作析出面側之表面平滑之電解銅箔之後,於電解銅箔形成電路。 Therefore, in order to refine the conductor pattern by using the electrolytic copper foil, it is proposed to add an additive such as a sulfur-containing compound that acts as a brightening agent to the electrolytic solution to prepare a surface-smoothed electrolytic copper foil on the side of the deposition surface. Thereafter, an electric circuit is formed on the electrolytic copper foil.

[先前技術文獻] [Previous Technical Literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本特開2004-162172號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2004-162172

然而,專利文獻1之方法於電解液中包含之添加劑之影響下,於製造電解銅箔時,因常溫下之再結晶及伴隨其之收縮而銅箔容易產生皺褶。並且,於產生此種皺褶之情形時,其後使電解銅箔與絕緣基板(樹脂基板)接著時亦會產生皺褶。如此,若電解銅箔產生了皺褶,則於電解銅箔形成導體圖案時,微間距化變得困難,故而電路形成性難謂充分。另外,專利文獻1之電解銅箔亦存在如下問題:於添加至電解液之添加劑之影響下,機械特性(例如抗拉強度或高溫伸長率等)容易發生變化。 However, in the method of Patent Document 1, under the influence of the additive contained in the electrolytic solution, in the production of the electrolytic copper foil, the copper foil is likely to wrinkle due to recrystallization at normal temperature and shrinkage thereof. Further, when such wrinkles are generated, the electrolytic copper foil and the insulating substrate (resin substrate) are subsequently wrinkled. When the electrodeposited copper foil is wrinkled, the fine pitch becomes difficult when the conductor pattern is formed on the electrodeposited copper foil, and thus the circuit formation property is difficult to be sufficient. Further, the electrolytic copper foil of Patent Document 1 also has a problem that mechanical properties (for example, tensile strength, high-temperature elongation, etc.) are likely to change under the influence of an additive added to the electrolytic solution.

另一方面,為了確保絕緣性而防止短路,於導體圖案塗佈阻焊劑,故而對於成為導體圖案之電解銅箔之表面亦要求與阻焊劑之密接性良好。然而,若成為導體圖案之電解銅箔之表面平滑,則存在與阻焊劑之密接性降低之問題。因此,成為導體圖案之電解銅箔之表面需要一定程度之粗糙度。 On the other hand, in order to ensure insulation and prevent short-circuiting, a solder resist is applied to the conductor pattern, and therefore, the surface of the electrodeposited copper foil to be a conductor pattern is required to have good adhesion to the solder resist. However, if the surface of the electrodeposited copper foil to be a conductor pattern is smooth, there is a problem that the adhesion to the solder resist is lowered. Therefore, the surface of the electrodeposited copper foil to be a conductor pattern requires a certain degree of roughness.

如此,關於電解銅箔,為了提高與絕緣基板之接著性而進行微間距化,對於與絕緣基板接著之面要求平滑性,另一方面,為了確保阻焊劑之密接性,對於成為導體圖案之面要求一定程度之粗糙度。 In order to improve the adhesion to the insulating substrate, the electrodeposited copper foil is required to have a smoother surface in contact with the insulating substrate, and the surface of the conductor pattern is required to ensure the adhesion of the solder resist. A certain degree of roughness is required.

本發明之若干個實施形態係為了解決如上所述之問題而成者,其課題在於提供一種電路形成性及阻焊劑之密接性優異之電解銅箔。 In order to solve the above-mentioned problems, a plurality of embodiments of the present invention have been made to provide an electrolytic copper foil excellent in circuit formability and adhesion of a solder resist.

另外,本發明之若干個實施形態之課題在於提供一種使用電路形成性及阻焊劑之密接性優異之電解銅箔之覆銅積層板、印刷配線板及其製造方法、以及電子機器及其製造方法。 In addition, it is an object of the present invention to provide a copper clad laminate for an electrolytic copper foil which is excellent in adhesion between a circuit formation property and a solder resist, a printed wiring board, a method for producing the same, and an electronic device and a method for producing the same .

本發明人等為了解決上述問題而努力進行了研究,結果發現,將電解銅箔之光澤面側之表面粗糙度Sa及/或均方根高度Sq控制為特定之範圍,並且將電解銅箔之析出面側之表面粗糙度Sa、均方根高度Sq、最大峰高度Sp、最大谷深度Sv、最大高度Sz、峰度Sku及偏斜度Ssk中之至少一者控制為特定之 範圍,藉此,光澤面成為與絕緣基板之接著性優異之表面狀態,且析出面成為阻焊劑之密接性優異之表面狀態,其結果為,可實現電路形成性與阻焊劑之密接性之兼顧,從而完成了本發明之若干個實施形態。 The inventors of the present invention have made an effort to solve the above problems, and have found that the surface roughness Sa and/or the root mean square height Sq of the shiny side of the electrodeposited copper foil are controlled to a specific range, and the electrolytic copper foil is At least one of the surface roughness Sa, the root mean square height Sq, the maximum peak height Sp, the maximum valley depth Sv, the maximum height Sz, the kurtosis Sku, and the skewness Ssk on the deposition surface side is controlled to a specific range, whereby The shiny surface is in a surface state excellent in adhesion to the insulating substrate, and the deposited surface is in a surface state excellent in adhesion of the solder resist. As a result, the circuit formation property and the solder resist adhesion can be achieved. Several embodiments of the invention.

即,本發明之實施形態之電解銅箔具有光澤面及析出面,且於上述光澤面側具有粗化處理層,上述光澤面之均方根高度Sq為0.550μm以下,上述析出面側滿足下述條件中之至少一者: In other words, the electrodeposited copper foil according to the embodiment of the present invention has a shiny surface and a precipitated surface, and has a roughened layer on the glossy surface side, and the root mean square height Sq of the shiny surface is 0.550 μm or less, and the deposition surface side satisfies the lower side. At least one of the conditions stated:

(a)表面粗糙度Sa為0.115μm以上 (a) Surface roughness Sa is 0.115 μm or more

(b)均方根高度Sq為0.120μm以上 (b) The root mean square height Sq is 0.120 μm or more

(c)最大峰高度Sp為0.900μm以上 (c) The maximum peak height Sp is 0.900 μm or more

(d)最大谷深度Sv為0.600μm以上 (d) The maximum valley depth Sv is 0.600 μm or more

(e)最大高度Sz為1.500μm以上 (e) The maximum height Sz is 1.500 μm or more

(f)峰度Sku為2.75以上且4.00以下 (f) The kurtosis Sku is 2.75 or more and 4.00 or less

(g)偏斜度Ssk為0.00以上且0.35以下。 (g) The skewness Ssk is 0.00 or more and 0.35 or less.

另外,本發明之另一實施形態之電解銅箔具有光澤面及析出面,且於上述光澤面側具有粗化處理層,上述光澤面側之表面粗糙度Sa為0.470μm以下,上述析出面側滿足下述條件中之至少一者: Further, the electrodeposited copper foil according to another embodiment of the present invention has a shiny surface and a precipitated surface, and has a roughened layer on the shiny side, and the surface roughness Sa on the shiny side is 0.470 μm or less, and the deposited surface side Meet at least one of the following conditions:

(a)表面粗糙度Sa為0.115μm以上 (a) Surface roughness Sa is 0.115 μm or more

(b)均方根高度Sq為0.120μm以上 (b) The root mean square height Sq is 0.120 μm or more

(c)最大峰高度Sp為0.900μm以上 (c) The maximum peak height Sp is 0.900 μm or more

(d)最大谷深度Sv為0.600μm以上 (d) The maximum valley depth Sv is 0.600 μm or more

(e)最大高度Sz為1.500μm以上 (e) The maximum height Sz is 1.500 μm or more

(f)峰度Sku為2.75以上且4.00以下 (f) The kurtosis Sku is 2.75 or more and 4.00 or less

(g)偏斜度Ssk為0.00以上且0.35以下。 (g) The skewness Ssk is 0.00 or more and 0.35 or less.

另外,本發明之另一實施形態之電解銅箔具有光澤面及析出面,且於上述光澤面側不具有粗化處理層,上述光澤面側之表面粗糙度Sa為0.270μm以下,上述析出面側滿足下述條件中之至少一者: Further, the electrodeposited copper foil according to another embodiment of the present invention has a shiny surface and a precipitated surface, and has no roughening treatment layer on the gloss surface side, and the surface roughness Sa on the gloss surface side is 0.270 μm or less. The side meets at least one of the following conditions:

(a)表面粗糙度Sa為0.115μm以上 (a) Surface roughness Sa is 0.115 μm or more

(b)均方根高度Sq為0.120μm以上 (b) The root mean square height Sq is 0.120 μm or more

(c)最大峰高度Sp為0.900μm以上 (c) The maximum peak height Sp is 0.900 μm or more

(d)最大谷深度Sv為0.600μm以上 (d) The maximum valley depth Sv is 0.600 μm or more

(e)最大高度Sz為1.500μm以上 (e) The maximum height Sz is 1.500 μm or more

(f)峰度Sku為2.75以上且4.00以下 (f) The kurtosis Sku is 2.75 or more and 4.00 or less

(g)偏斜度Ssk為0.00以上且0.35以下。 (g) The skewness Ssk is 0.00 or more and 0.35 or less.

另外,本發明之另一實施形態之電解銅箔具有光澤面及析出面,且於上述光澤面側不具有粗化處理層,上述光澤面側之均方根高度Sq為0.315μm以下,上述析出面側滿足下述條件中之至少一者: Further, the electrodeposited copper foil according to another embodiment of the present invention has a shiny surface and a precipitated surface, and has no roughening treatment layer on the glossy surface side, and the root mean square height Sq of the gloss surface side is 0.315 μm or less, and the precipitation is performed. The face side satisfies at least one of the following conditions:

(a)表面粗糙度Sa為0.115μm以上 (a) Surface roughness Sa is 0.115 μm or more

(b)均方根高度Sq為0.120μm以上 (b) The root mean square height Sq is 0.120 μm or more

(c)最大峰高度Sp為0.900μm以上 (c) The maximum peak height Sp is 0.900 μm or more

(d)最大谷深度Sv為0.600μm以上 (d) The maximum valley depth Sv is 0.600 μm or more

(e)最大高度Sz為1.500μm以上 (e) The maximum height Sz is 1.500 μm or more

(f)峰度Sku為2.75以上且4.00以下 (f) The kurtosis Sku is 2.75 or more and 4.00 or less

(g)偏斜度Ssk為0.00以上且0.35以下。 (g) The skewness Ssk is 0.00 or more and 0.35 or less.

另外,本發明之實施形態之覆銅積層板具有上述電解銅箔。 Moreover, the copper clad laminate of the embodiment of the present invention has the above-described electrolytic copper foil.

另外,本發明之實施形態之印刷配線板具有上述電解銅箔。 Moreover, the printed wiring board according to the embodiment of the present invention has the above-described electrolytic copper foil.

另外,本發明之實施形態之印刷配線板之製造方法使用上述電解銅箔。 Moreover, the method for producing a printed wiring board according to the embodiment of the present invention uses the above-described electrolytic copper foil.

另外,本發明之另一實施形態之印刷配線板之製造方法包含如下步驟:將上述電解銅箔與絕緣基板積層而製作覆銅積層板之後,藉由半加成法、減成法、部分加成法或改良半加成法中之任一方法而形成電路。 Further, a method of manufacturing a printed wiring board according to another embodiment of the present invention includes the steps of: laminating the electrolytic copper foil and an insulating substrate to form a copper clad laminate, and then adding, subtracting, and partially adding the copper clad laminate. The circuit is formed by either the method of forming or improving the semi-additive method.

另外,本發明之實施形態之電子機器具有上述印刷配線板。 Moreover, an electronic device according to an embodiment of the present invention includes the above printed wiring board.

進而,本發明之實施形態之電子機器之製造方法使用上述印刷配線板。 Further, in the method of manufacturing an electronic device according to the embodiment of the present invention, the printed wiring board is used.

根據本發明之若干個實施形態,可提供一種電路形成性及阻焊劑之密接性優異之電解銅箔。另外,根據本發明之若干個實施形態,可提供一種使用電路形成性及阻焊劑之密接性優異之電解銅箔之覆銅積層板、印刷配線板及其製造方法、以及電子機器及其製造方法。 According to some embodiments of the present invention, an electrolytic copper foil excellent in circuit formability and adhesion of a solder resist can be provided. Further, according to some embodiments of the present invention, a copper clad laminate for an electrolytic copper foil excellent in circuit formability and solder resist adhesion, a printed wiring board, a method for producing the same, and an electronic device and a method of manufacturing the same can be provided .

圖1(a)係形成粗化處理層及表面處理層前之實施例2之電解銅箔的光澤面之SEM圖像,(b)係形成粗化處理層及表面處理層前之實施例10之電解銅箔的光澤面之SEM圖像。 Fig. 1(a) is an SEM image of the shiny side of the electrolytic copper foil of Example 2 before forming the roughened layer and the surface treated layer, and (b) Example 10 before forming the roughened layer and the surface treated layer. SEM image of the shiny side of the electrolytic copper foil.

以下,對本發明之電解銅箔之實施形態進行說明。 Hereinafter, an embodiment of the electrolytic copper foil of the present invention will be described.

本發明之實施形態之電解銅箔具有光澤面及析出面。 The electrolytic copper foil according to the embodiment of the present invention has a shiny surface and a deposited surface.

此處,於本說明書中,「電解銅箔」意指利用電鍍之原理,使用電解轉筒而製作之銅箔及銅合金箔。 Here, in the present specification, "electrolytic copper foil" means a copper foil and a copper alloy foil produced by using an electrolytic drum by the principle of electroplating.

另外,於本說明書中,「電解銅箔之光澤面」意指製作電解銅箔時之轉筒側之表面(光亮(shiny)面:S面),另外,「電解銅箔之析出面」意指與製 作電解銅箔時之轉筒相反之側之表面(粗糙(mat)面:M面)。 In addition, in the present specification, the "glossy surface of the electrolytic copper foil" means the surface (shiny surface: S surface) on the side of the drum when the electrolytic copper foil is produced, and the "precipitation surface of the electrolytic copper foil" Refers to the surface (mat face: M side) opposite to the drum when the electrolytic copper foil is produced.

另外,於本說明書中,「光澤面側之表面粗糙度Sa」及「光澤面側之均方根高度Sq」於在電解銅箔(生箔)之光澤面設置粗化處理層及/或表面處理層之情形時,分別意指設置該層之後之表面(最外層之表面)之表面粗糙度Sa及均方根高度Sq。另外,「光澤面之表面粗糙度Sa」及「光澤面之均方根高度Sq」分別意指於光澤面側設置粗化處理層及/或表面處理層前之光澤面之表面(最外層之表面)之表面粗糙度Sa及均方根高度Sq。 In addition, in the present specification, the "surface roughness Sa of the glossy side" and the root mean square height Sq of the glossy side are provided with a roughened layer and/or surface on the shiny side of the electrolytic copper foil (raw foil). In the case of treating the layer, it means the surface roughness Sa and the root mean square height Sq of the surface (the outermost surface) after the layer is disposed, respectively. In addition, the "surface roughness Sa of the glossy surface" and the root mean square height Sq of the glossy surface mean the surface of the glossy surface before the roughening treatment layer and/or the surface treatment layer (the outermost layer) Surface roughness Sa and root mean square height Sq.

另外,於本說明書中,「析出面側之表面粗糙度Sa」、「析出面側之均方根高度Sq」、「析出面側之最大峰高度Sp」、「析出面側之最大谷深度Sv」、「析出面側之最大高度Sz」、「析出面側之峰度Sku」及「析出面側之偏斜度Ssk」於在電解銅箔(生箔)之析出面設置粗化處理層及/或表面處理層之情形時,分別意指設置該層之後之表面(最外層之表面)之表面粗糙度Sa、均方根高度Sq、最大峰高度Sp、最大谷深度Sv、最大高度Sz、峰度Sku及偏斜度Ssk。 In addition, in the present specification, "surface roughness Sa on the deposition surface side", "root mean square height Sq on the deposition surface side", "maximum peak height Sp on the deposition surface side", and "maximum valley depth Sv on the deposition surface side" The "maximum height Sz" on the side of the deposition surface, the kurtosis Sku on the side of the deposition surface, and the skewness Ssk on the side of the precipitation surface are provided on the deposition surface of the electrolytic copper foil (raw foil). In the case of the surface treatment layer, it means the surface roughness Sa, the root mean square height Sq, the maximum peak height Sp, the maximum valley depth Sv, the maximum height Sz, respectively, of the surface (the outermost surface) after the layer is disposed. Kurtosis Sku and skewness Ssk.

<於光澤面側不具有粗化處理層之電解銅箔> <Electrochemical copper foil having no roughened layer on the glossy side>

本發明之實施形態之電解銅箔於一態樣中,於光澤面側不具有粗化處理層,光澤面側之表面粗糙度Sa為0.270μm以下及/或光澤面側之均方根高度Sq為0.315μm以下。 In one aspect, the electrolytic copper foil according to the embodiment of the present invention does not have a roughened layer on the glossy side, and the surface roughness Sa on the glossy side is 0.270 μm or less and/or the root mean square height Sq of the glossy side. It is 0.315 μm or less.

此處,於本說明書中,「表面粗糙度Sa」係將Ra三維擴展之粗糙度之參數,表示相對於表面之平均表面,各點之高度差的絕對值之平均值。另外,「均方根高度Sq」係將Rq三維擴展之粗糙度之參數,表示距表面之平均表面之距離之標準偏差。 Here, in the present specification, the "surface roughness Sa" is a parameter indicating the roughness of the three-dimensional expansion of Ra, and represents an average value of the absolute values of the height differences of the respective points with respect to the average surface of the surface. In addition, the "root mean square height Sq" is a parameter indicating the roughness of the three-dimensional expansion of Rq, indicating the standard deviation of the distance from the average surface of the surface.

藉由將光澤面側之表面粗糙度Sa及/或光澤面側之均方根高度Sq控制為上述範圍,而提高與絕緣基板之接著性,並且關於使用電解銅箔而形成之電路之間 距,能夠實現L/S(線/間隙)=22μm以下/22μm以下、較佳為20μm以下/20μm以下之微間距化。 By controlling the surface roughness Sa of the glossy side and/or the root mean square height Sq of the glossy side to the above range, the adhesion to the insulating substrate is improved, and the distance between the circuits formed using the electrolytic copper foil is It is possible to achieve a fine pitch of L/S (line/gap) = 22 μm or less / 22 μm or less, preferably 20 μm or less / 20 μm or less.

電解銅箔之光澤面側之表面粗糙度Sa就提高微間距化之效果的觀點而言,較佳為0.230μm以下,更佳為0.180μm以下,進而較佳為0.150μm以下,最佳為0.133μm以下。此外,電解銅箔之光澤面側之表面粗糙度Sa之下限並無特別限定,一般為0.001μm以上,較佳為0.010μm以上,更佳為0.050μm以上,進而較佳為0.100μm以上。 The surface roughness Sa of the shiny side of the electrolytic copper foil is preferably 0.230 μm or less, more preferably 0.180 μm or less, still more preferably 0.150 μm or less, and most preferably 0.133, from the viewpoint of improving the effect of the fine pitch. Below μm. Further, the lower limit of the surface roughness Sa of the shiny side of the electrolytic copper foil is not particularly limited, but is generally 0.001 μm or more, preferably 0.010 μm or more, more preferably 0.050 μm or more, and still more preferably 0.100 μm or more.

另外,電解銅箔之光澤面側之均方根高度Sq就提高微間距化之效果的觀點而言,較佳為0.200μm以下,更佳為0.180μm以下。此外,電解銅箔之光澤面側之均方根高度Sq之下限並無特別限定,一般為0.001μm以上,較佳為0.010μm以上,更佳為0.050μm以上,進而較佳為0.100μm以上。 In addition, the root mean square height Sq of the shiny side of the electrolytic copper foil is preferably 0.200 μm or less, and more preferably 0.180 μm or less from the viewpoint of improving the effect of the fine pitch. Further, the lower limit of the root mean square height Sq of the shiny side of the electrolytic copper foil is not particularly limited, but is generally 0.001 μm or more, preferably 0.010 μm or more, more preferably 0.050 μm or more, and still more preferably 0.100 μm or more.

<於光澤面側具有粗化處理層之電解銅箔> <Electrochemical copper foil having a roughened treatment layer on the glossy side>

本發明之實施形態之電解銅箔於另一態樣中,於光澤面側具有粗化處理層,光澤面側之表面粗糙度Sa為0.470μm以下及/或光澤面側之均方根高度Sq為0.550μm以下。 In another aspect, the electrolytic copper foil according to the embodiment of the present invention has a roughened layer on the glossy side, and the surface roughness Sa on the glossy side is 0.470 μm or less and/or the root mean square height Sq on the glossy side. It is 0.550 μm or less.

一般而言,於光澤面側具有粗化處理層之電解銅箔存在微間距化降低之情況,但藉由將光澤面側之表面粗糙度及/或光澤面側之均方根高度Sq控制為上述範圍,而提高與絕緣基板之接著性,並且關於使用電解銅箔而形成之電路之間距,能夠實現L/S(線/間隙)=22μm以下/22μm以下、較佳為20μm以下/20μm以下之微間距化。 In general, the electrodeposited copper foil having the roughened layer on the shiny side has a fine pitch reduction, but the surface roughness of the glossy side and/or the root mean square height Sq of the glossy side are controlled to In the above range, the adhesion to the insulating substrate is improved, and the distance between the circuits formed using the electrolytic copper foil can be L/S (line/gap) = 22 μm or less / 22 μm or less, preferably 20 μm or less / 20 μm or less. The micro pitch.

電解銅箔之光澤面側之表面粗糙度Sa就提高微間距化之效果的觀點而言,較佳為0.385μm以下,更佳為0.380μm以下,更佳為0.355μm以下,進而較佳為0.340μm以下,進而較佳為0.300μm以下,另外,進而較佳為0.295μm以下,另外,進而較佳為0.230μm以下,最佳為0.200μm以下。此 外,電解銅箔之光澤面側之表面粗糙度Sa之下限並無特別限定,一般為0.001μm以上,較佳為0.010μm以上,更佳為0.050μm以上,進而較佳為0.100μm以上。 The surface roughness Sa of the shiny side of the electrolytic copper foil is preferably 0.385 μm or less, more preferably 0.380 μm or less, still more preferably 0.355 μm or less, and still more preferably 0.340, from the viewpoint of improving the effect of the fine pitch. It is preferably not more than 0.3 m, more preferably 0.300 μm or less, further preferably 0.295 μm or less, further preferably 0.230 μm or less, and most preferably 0.200 μm or less. Further, the lower limit of the surface roughness Sa of the shiny side of the electrolytic copper foil is not particularly limited, but is generally 0.001 μm or more, preferably 0.010 μm or more, more preferably 0.050 μm or more, and still more preferably 0.100 μm or more.

另外,電解銅箔之光澤面側之均方根高度Sq就提高微間距化之效果的觀點而言,較佳為0.490μm以下,更佳為0.450μm以下,更佳為0.435μm以下,進而較佳為0.400μm以下,進而較佳為0.395μm以下,另外,進而較佳為0.330μm以下,最佳為0.290μm以下。此外,電解銅箔之光澤面側之均方根高度Sq之下限並無特別限定,一般為0.001μm以上,較佳為0.010μm以上,更佳為0.050μm以上,進而較佳為0.100μm以上。 In addition, the root mean square height Sq of the shiny side of the electrolytic copper foil is preferably 0.490 μm or less, more preferably 0.450 μm or less, still more preferably 0.435 μm or less, from the viewpoint of improving the effect of the fine pitch. It is preferably 0.400 μm or less, more preferably 0.395 μm or less, further preferably 0.330 μm or less, and most preferably 0.290 μm or less. Further, the lower limit of the root mean square height Sq of the shiny side of the electrolytic copper foil is not particularly limited, but is generally 0.001 μm or more, preferably 0.010 μm or more, more preferably 0.050 μm or more, and still more preferably 0.100 μm or more.

具有如上所述之光澤面側之表面粗糙度Sa及/或均方根高度Sq之本發明之實施形態之電解銅箔可藉由控制在光澤面側設置粗化處理層及/或表面處理層前之光澤面之表面粗糙度Sa及/或均方根高度Sq而獲得。 The electrolytic copper foil of the embodiment of the present invention having the surface roughness Sa and/or the root mean square height Sq of the glossy surface side as described above can be provided with a roughening treatment layer and/or a surface treatment layer by controlling the gloss side. Obtained from the surface roughness Sa of the front gloss surface and/or the root mean square height Sq.

即,為了獲得本發明之實施形態之電解銅箔,只要將在光澤面側設置粗化處理層及/或表面處理層前之光澤面之表面粗糙度Sa控制為較佳為0.270μm以下,更佳為0.230μm以下,更佳為0.180μm以下,進而較佳為0.150μm以下,進而較佳為0.133μm以下,另外,進而較佳為0.130μm以下,最佳為0.120μm以下即可。此外,在光澤面側設置粗化處理層及/或表面處理層前之光澤面之表面粗糙度Sa之下限並無特別限定,一般為0.001μm以上,較佳為0.010μm以上,更佳為0.050μm以上,進而較佳為0.100μm以上。 In other words, in order to obtain the electrodeposited copper foil according to the embodiment of the present invention, the surface roughness Sa of the gloss surface before the roughening treatment layer and/or the surface treatment layer is provided on the gloss side is preferably controlled to 0.270 μm or less. The thickness is preferably 0.230 μm or less, more preferably 0.180 μm or less, further preferably 0.150 μm or less, further preferably 0.133 μm or less, and further preferably 0.130 μm or less, and most preferably 0.120 μm or less. Further, the lower limit of the surface roughness Sa of the shiny surface before the roughening treatment layer and/or the surface treatment layer is provided on the glossy side is not particularly limited, but is generally 0.001 μm or more, preferably 0.010 μm or more, and more preferably 0.050. It is preferably μm or more, and more preferably 0.100 μm or more.

藉由將在光澤面側設置粗化處理層及/或表面處理層前之光澤面之表面粗糙度Sa控制為上述範圍,可將設置粗化處理層及/或表面處理層之後之光澤面側之表面粗糙度Sa及/或均方根高度Sq控制為上述範圍,故而關於使用電解銅箔而形成之電路之間距,能夠實現L/S(線/間隙)=22μm以下/22μm以下、更佳為20μm以下/20μm以下之微間距化。 By controlling the surface roughness Sa of the shiny surface before the roughening treatment layer and/or the surface treatment layer on the glossy side to the above range, the gloss side after the roughening treatment layer and/or the surface treatment layer is provided Since the surface roughness Sa and/or the root mean square height Sq are controlled to the above range, L/S (line/gap) = 22 μm or less / 22 μm or less can be realized with respect to the distance between circuits formed using the electrolytic copper foil. It is a fine pitch of 20 μm or less / 20 μm or less.

另外,為了獲得本發明之實施形態之電解銅箔,只要將在光澤面側設置粗化處理層及/或表面處理層前之光澤面之均方根高度Sq控制為較佳為0.315μm以下,更佳為0.292μm以下,更佳為0.230μm以下,進而較佳為0.200μm以下,進而較佳為0.180μm以下,另外,進而較佳為0.120μm以下,最佳為0.115μm以下即可。此外,在光澤面側設置粗化處理層及/或表面處理層前之光澤面之均方根高度Sq之下限並無特別限定,一般為0.001μm以上,較佳為0.010μm以上,更佳為0.050μm以上,進而較佳為0.100μm以上。 In addition, in order to obtain the electrolytic copper foil according to the embodiment of the present invention, the root mean square height Sq of the shiny surface before the roughening treatment layer and/or the surface treatment layer is provided on the glossy surface side is preferably controlled to 0.315 μm or less. More preferably, it is 0.292 μm or less, more preferably 0.230 μm or less, further preferably 0.200 μm or less, further preferably 0.180 μm or less, and further preferably 0.120 μm or less, and most preferably 0.115 μm or less. Further, the lower limit of the root mean square height Sq of the shiny surface before the roughening treatment layer and/or the surface treatment layer is provided on the shiny side is not particularly limited, but is generally 0.001 μm or more, preferably 0.010 μm or more, and more preferably It is 0.050 μm or more, and more preferably 0.100 μm or more.

藉由將在光澤面側設置粗化處理層及/或表面處理層前之光澤面之均方根高度Sq控制為上述範圍,可將設置粗化處理層及/或表面處理層之後之光澤面側之表面粗糙度Sa及/或均方根高度Sq控制為上述範圍,故而關於使用電解銅箔而形成之電路之間距,能夠實現L/S(線/間隙)=22μm以下/22μm以下、更佳為20μm以下/20μm以下之微間距化。 By setting the root mean square height Sq of the glossy surface before the roughening treatment layer and/or the surface treatment layer on the glossy side to the above range, the gloss surface after the roughening treatment layer and/or the surface treatment layer can be provided Since the surface roughness Sa and/or the root mean square height Sq of the side are controlled to the above range, L/S (line/gap) = 22 μm or less / 22 μm or less, and more, can be realized with respect to the distance between circuits formed using the electrolytic copper foil. It is preferably a fine pitch of 20 μm or less / 20 μm or less.

關於本發明之實施形態之電解銅箔,析出面側滿足下述條件中之至少一者: In the electrodeposited copper foil according to the embodiment of the present invention, the deposition surface side satisfies at least one of the following conditions:

(a)表面粗糙度Sa為0.115μm以上 (a) Surface roughness Sa is 0.115 μm or more

(b)均方根高度Sq為0.120μm以上 (b) The root mean square height Sq is 0.120 μm or more

(c)最大峰高度Sp為0.900μm以上 (c) The maximum peak height Sp is 0.900 μm or more

(d)最大谷深度Sv為0.600μm以上 (d) The maximum valley depth Sv is 0.600 μm or more

(e)最大高度Sz為1.500μm以上 (e) The maximum height Sz is 1.500 μm or more

(f)峰度Sku為2.75以上且4.00以下 (f) The kurtosis Sku is 2.75 or more and 4.00 or less

(g)偏斜度Ssk為0.00以上且0.35以下。 (g) The skewness Ssk is 0.00 or more and 0.35 or less.

藉由使析出面側滿足上述條件中之至少一者,析出面側之表面成為適度之粗糙度,其結果為,可提高阻焊劑之密接性。 When the deposition surface side satisfies at least one of the above conditions, the surface on the deposition surface side has an appropriate roughness, and as a result, the adhesion of the solder resist can be improved.

此處,於本說明書中,「最大峰高度Sp」表示距表面之平均表 面之高度之最大值。另外,「最大谷深度Sv」表示距表面之平均表面之高度之最小值之絕對值。另外,「最大高度Sz」表示自表面之最高點至最低點之距離。另外,「峰度Sku」表示高度分佈之尖銳度,於Sku=3時,表示高度分佈為常態分佈,於Sku>3時,表示表面上尖銳之峰或谷較多,於Sku<3時,表示表面平坦。另外,「偏斜度Ssk」表示高度分佈之對稱性,於Ssk=0時,表示高度分佈上下對稱,於Ssk>0時,表示細小之峰較多之表面,於Ssk<0時,表示細小之谷較多之表面。 Here, in the present specification, "maximum peak height Sp" means the maximum value of the height from the average surface of the surface. Further, the "maximum valley depth Sv" represents the absolute value of the minimum value of the height from the average surface of the surface. In addition, the "maximum height Sz" represents the distance from the highest point to the lowest point of the surface. In addition, "kurtness Sku" indicates the sharpness of the height distribution. When Sku=3, it indicates that the height distribution is a normal distribution. When Sku>3, it indicates that there are many sharp peaks or valleys on the surface. When Sku<3, Indicates that the surface is flat. In addition, the "skewness Ssk" indicates the symmetry of the height distribution. When Ssk=0, it indicates that the height distribution is vertically symmetrical. When Ssk>0, it indicates that the surface of the small peak is large. When Ssk<0, it indicates smallness. The surface of the valley is more.

就穩定地確保阻焊劑之密接性之觀點而言,析出面側較佳為滿足至少2個條件,更佳為滿足至少3個條件,進而較佳為滿足至少4個條件,另外,進而較佳為滿足至少5個條件,尤佳為滿足至少6個條件,最佳為滿足7個所有條件較適當。 From the viewpoint of stably ensuring the adhesion of the solder resist, the deposition surface side preferably satisfies at least two conditions, more preferably satisfies at least three conditions, and further preferably satisfies at least four conditions, and further preferably In order to satisfy at least 5 conditions, it is preferable to satisfy at least 6 conditions, and it is preferable to satisfy all of the 7 conditions.

就穩定地確保阻焊劑之密接性之觀點而言,析出面側之表面粗糙度Sa較佳為0.120μm以上,更佳為0.130μm以上,進而較佳為0.140μm以上。此外,析出面側之表面粗糙度Sa之上限並無特別限定,一般為2.000μm以下,較佳為1.800μm以下,進而較佳為1.500μm以下,最佳為1.000μm以下。 The surface roughness Sa of the deposition surface side is preferably 0.120 μm or more, more preferably 0.130 μm or more, and still more preferably 0.140 μm or more from the viewpoint of stably ensuring the adhesion of the solder resist. Further, the upper limit of the surface roughness Sa of the deposition surface side is not particularly limited, but is generally 2.000 μm or less, preferably 1.800 μm or less, more preferably 1.500 μm or less, and most preferably 1.000 μm or less.

就穩定地確保阻焊劑之密接性之觀點而言,析出面側之均方根高度Sq較佳為0.130μm以上,更佳為0.140μm以上,進而較佳為0.150μm以上。此外,析出面側之均方根高度Sq之上限並無特別限定,一般為2.000μm以下,較佳為1.800μm以下,進而較佳為1.500μm以下,最佳為1.300μm以下。 The root mean square height Sq of the deposition surface side is preferably 0.130 μm or more, more preferably 0.140 μm or more, and still more preferably 0.150 μm or more from the viewpoint of stably ensuring the adhesion of the solder resist. Further, the upper limit of the root mean square height Sq on the deposition surface side is not particularly limited, but is generally 2.000 μm or less, preferably 1.800 μm or less, more preferably 1.500 μm or less, and most preferably 1.300 μm or less.

就穩定地確保阻焊劑之密接性之觀點而言,析出面側之最大峰高度Sp較佳為1.050μm以上,更佳為1.100μm以上,進而較佳為1.200μm以上。此外,析出面側之最大峰高度Sp之上限並無特別限定,一般為10.000μm以下,較佳為9.000μm以下,進而較佳為8.000μm以下,最佳為7.000μm以下。 The maximum peak height Sp on the deposition surface side is preferably 1.050 μm or more, more preferably 1.100 μm or more, and still more preferably 1.200 μm or more from the viewpoint of stably ensuring the adhesion of the solder resist. Further, the upper limit of the maximum peak height Sp on the deposition surface side is not particularly limited, but is generally 10.000 μm or less, preferably 9.000 μm or less, more preferably 8.000 μm or less, and most preferably 7.000 μm or less.

就穩定地確保阻焊劑之密接性之觀點而言,析出面側之最大谷 深度Sv較佳為0.740μm以上,更佳為0.800μm以上,進而較佳為0.900μm以上。此外,析出面側之最大谷深度Sv之上限並無特別限定,一般為10.000μm以下,較佳為9.000μm以下,進而較佳為8.000μm以下。 The maximum valley depth Sv on the deposition surface side is preferably 0.740 μm or more, more preferably 0.800 μm or more, and still more preferably 0.900 μm or more from the viewpoint of stably ensuring the adhesion of the solder resist. Further, the upper limit of the maximum valley depth Sv on the deposition surface side is not particularly limited, but is generally 10.000 μm or less, preferably 9.000 μm or less, and more preferably 8.000 μm or less.

就穩定地確保阻焊劑之密接性之觀點而言,析出面側之最大高度Sz較佳為1.800μm以上,更佳為1.900μm以上,進而較佳為2.000μm以上,最佳為2.200μm以上。此外,析出面側之最大高度Sz之上限並無特別限定,一般為20.000μm以下,較佳為18.000μm以下,進而較佳為15.000μm以下,最佳為14.000μm以下。 The maximum height Sz of the deposition surface side is preferably 1.800 μm or more, more preferably 1.000 μm or more, further preferably 2.000 μm or more, and most preferably 2.200 μm or more from the viewpoint of stably ensuring the adhesion of the solder resist. Further, the upper limit of the maximum height Sz on the deposition surface side is not particularly limited, but is generally 20.000 μm or less, preferably 18.000 μm or less, more preferably 15.000 μm or less, and most preferably 14.000 μm or less.

就穩定地確保阻焊劑之密接性之觀點而言,析出面側之峰度Sku較佳為2.80以上且4.00以下,更佳為2.85以上且3.90以下,進而較佳為2.90以上且3.80以下。 The kurtosis Sku of the deposition surface side is preferably 2.80 or more and 4.00 or less, more preferably 2.85 or more and 3.90 or less, and further preferably 2.90 or more and 3.80 or less from the viewpoint of stably ensuring the adhesion of the solder resist.

就穩定地確保阻焊劑之密接性之觀點而言,析出面側之偏斜度Ssk較佳為0.00以上且0.26以下,更佳為0.01以上且0.20以下。 The skewness Ssk of the deposition surface side is preferably 0.00 or more and 0.26 or less, and more preferably 0.01 or more and 0.20 or less from the viewpoint of stably ensuring the adhesion of the solder resist.

滿足如上所述之析出面側之條件之本發明之實施形態之電解銅箔可藉由控制電解銅箔之製造條件(例如電解液之線速度、電流密度、添加至電解液之成分之濃度等)而獲得。 The electrolytic copper foil according to the embodiment of the present invention which satisfies the conditions of the deposition surface side as described above can be controlled by the manufacturing conditions of the electrolytic copper foil (for example, the linear velocity of the electrolytic solution, the current density, the concentration of the component added to the electrolytic solution, etc.) ) and get.

關於本發明之實施形態之電解銅箔,常溫抗拉強度較佳為30kg/mm2以上。此處,於本說明書中,「常溫抗拉強度」係指室溫下之抗拉強度,意指依據IPC-TM-650而測得者。若常溫抗拉強度為30kg/mm2以上,則有操作時不易產生皺褶之效果。就穩定地獲得該效果之觀點而言,常溫抗拉強度更佳為35kg/mm2以上。 The electrolytic copper foil according to the embodiment of the present invention preferably has a tensile strength at room temperature of 30 kg/mm 2 or more. Here, in the present specification, "normal temperature tensile strength" means tensile strength at room temperature, which means measured according to IPC-TM-650. When the tensile strength at normal temperature is 30 kg/mm 2 or more, there is an effect that wrinkles are less likely to occur during handling. From the viewpoint of stably obtaining this effect, the normal temperature tensile strength is more preferably 35 kg/mm 2 or more.

關於本發明之實施形態之電解銅箔,常溫伸長率較佳為3%以上。此處,於本說明書中,「常溫伸長率」係指室溫下之伸長率,意指依據IPC-TM-650而測得者。若常溫伸長率為3%以上,則有不易斷裂之效果。就穩 定地獲得該效果之觀點而言,常溫伸長率更佳為4%以上。 The electrolytic copper foil according to the embodiment of the present invention preferably has a room temperature elongation of 3% or more. Here, in the present specification, "normal temperature elongation" means an elongation at room temperature, which means that it is measured in accordance with IPC-TM-650. If the room temperature elongation is 3% or more, there is an effect that it is not easily broken. From the viewpoint of stably obtaining this effect, the room temperature elongation is more preferably 4% or more.

關於本發明之實施形態之電解銅箔,高溫抗拉強度較佳為10kg/mm2以上。於本說明書中,「高溫抗拉強度」係指於180℃之抗拉強度,意指依據IPC-TM-650而測得者。若高溫抗拉強度為10kg/mm2以上,則有不易產生與樹脂之貼附時之皺褶之效果。就穩定地獲得該效果之觀點而言,高溫抗拉強度更佳為15kg/mm2以上。 The electrolytic copper foil according to the embodiment of the present invention preferably has a high tensile strength of 10 kg/mm 2 or more. In the present specification, "high temperature tensile strength" means a tensile strength at 180 ° C, which means that it is measured in accordance with IPC-TM-650. When the high-temperature tensile strength is 10 kg/mm 2 or more, the effect of wrinkles when attached to the resin is less likely to occur. From the viewpoint of stably obtaining this effect, the high-temperature tensile strength is more preferably 15 kg/mm 2 or more.

關於本發明之實施形態之電解銅箔,高溫伸長率較佳為2%以上。於本說明書中,「高溫伸長率」係指於180℃之伸長率,意指依據IPC-TM-650而測得者。若高溫伸長率為2%以上,則對防止電路產生龜裂有效果。就穩定地獲得該效果之觀點而言,高溫伸長率較佳為3%以上,更佳為6%以上,進而較佳為15%以上。 The electrolytic copper foil according to the embodiment of the present invention preferably has a high temperature elongation of 2% or more. In the present specification, "high temperature elongation" means an elongation at 180 ° C, which means that it is measured in accordance with IPC-TM-650. When the high temperature elongation is 2% or more, it is effective in preventing cracks in the circuit. The high temperature elongation is preferably 3% or more, more preferably 6% or more, and still more preferably 15% or more from the viewpoint of stably obtaining the effect.

作為本發明之實施形態之電解銅箔(生箔)之原材料即銅及銅合金之例,可列舉:純銅;摻Sn銅;摻Ag銅;添加了Ti、W、Mo、Cr、Zr、Mg、Ni、Sn、Ag、Co、Fe、As、P等之銅合金等。例如,由銅合金形成之電解銅箔可藉由在製造電解銅箔時使用之電解液中添加合金元素(例如,選自由Ti、W、Mo、Cr、Zr、Mg、Ni、Sn、Ag、Co、Fe、As及P所組成之群中之一種以上之元素)而製造。 Examples of the copper and copper alloy which are the raw materials of the electrolytic copper foil (raw foil) according to the embodiment of the present invention include pure copper; Sn-doped copper; Ag-doped copper; and Ti, W, Mo, Cr, Zr, and Mg are added. , copper alloys such as Ni, Sn, Ag, Co, Fe, As, P, and the like. For example, an electrolytic copper foil formed of a copper alloy may be added with an alloying element by an electrolytic solution used in the production of an electrolytic copper foil (for example, selected from the group consisting of Ti, W, Mo, Cr, Zr, Mg, Ni, Sn, Ag, Manufactured from one or more of the group consisting of Co, Fe, As, and P).

電解銅箔(生箔)之厚度並無特別限定,典型而言,為0.5μm~3000μm,較佳為1.0μm~1000μm,更佳為1.0μm~300μm,更佳為1.0μm~100μm,進而較佳為3.0μm~75μm,進而較佳為4μm~40μm,另外,進而較佳為5μm~37μm,另外,進而較佳為6μm~28μm,另外,進而較佳為7μm~25μm,最佳為8μm~19μm。 The thickness of the electrolytic copper foil (raw foil) is not particularly limited, and is typically 0.5 μm to 3000 μm, preferably 1.0 μm to 1000 μm, more preferably 1.0 μm to 300 μm, still more preferably 1.0 μm to 100 μm, and further It is preferably 3.0 μm to 75 μm, more preferably 4 μm to 40 μm, further preferably 5 μm to 37 μm, further preferably 6 μm to 28 μm, further preferably 7 μm to 25 μm, and most preferably 8 μm. 19 μm.

<電解銅箔(生箔)之製造方法> <Manufacturing method of electrolytic copper foil (raw foil)>

電解銅箔(生箔)係自硫酸銅鍍浴使銅電解析出至鈦或不鏽鋼製之轉筒上 而製造。以下,表示電解條件之例。 The electrolytic copper foil (raw foil) is produced by analyzing copper electricity from a copper sulfate plating bath onto a drum made of titanium or stainless steel. Hereinafter, an example of electrolysis conditions will be described.

(電解條件) (electrolysis conditions)

電解液組成:50~150g/L之Cu、60~150g/L之H2SO4 Electrolyte composition: 50~150g/L Cu, 60~150g/L H 2 SO 4

電流密度:30~120A/dm2 Current density: 30~120A/dm 2

電解液之線流速:1.5~5m/s Electrolytic line flow rate: 1.5~5m/s

電解液溫度:50~60℃ Electrolyte temperature: 50~60°C

添加物:20~80質量ppm之氯離子、0.01~5.0質量ppm之動物膠 Additive: 20~80ppm ppm of chloride ion, 0.01~5.0ppmppm of animal glue

此外,本說明書中記載之電解、蝕刻、表面處理或鍍覆等使用之處理液(蝕刻液、電解液等)之剩餘部分只要無特別明示,則為水。 In addition, the remainder of the treatment liquid (etching liquid, electrolyte solution, etc.) used for electrolysis, etching, surface treatment, plating, etc. which are described in this specification is water, unless it is not specifically mentioned.

關於所使用之電解轉筒,為了將所形成之電解銅箔(生箔)之光澤面之表面粗糙度Sa及/或均方根高度Sq控制為特定之範圍,將轉筒表面之表面粗糙度Sa設為0.270μm以下及/或將均方根高度Sq設為0.315μm以下。轉筒表面之表面粗糙度Sa較佳為0.150μm以下,轉筒表面之均方根高度Sq較佳為0.200μm以下。 Regarding the electrolytic drum to be used, in order to control the surface roughness Sa and/or the root mean square height Sq of the shiny surface of the formed electrolytic copper foil (raw foil) to a specific range, the surface roughness of the surface of the drum Sa is set to 0.270 μm or less and/or the root mean square height Sq is set to 0.315 μm or less. The surface roughness Sa of the surface of the drum is preferably 0.150 μm or less, and the root mean square height Sq of the surface of the drum is preferably 0.200 μm or less.

於表面具有特定之表面粗糙度Sa及/或均方根高度Sq之電解轉筒可以如下所示之方式製造。首先,利用粒度號數為300(P300)~500(P500)號之研磨帶對鈦或不鏽鋼製轉筒之表面進行研磨。此時,於轉筒之寬度方向按特定寬度捲繞研磨帶,同時以特定速度使研磨帶於轉筒之寬度方向上移動,並使轉筒旋轉,藉此進行研磨。研磨時之轉筒表面之旋轉速度係設為130m/分鐘~190m/分鐘。另外,研磨時間係設為研磨帶之1次道次中通過轉筒表面的(寬度方向之位置)1點之時間與道次次數之乘積。此外,上述1次道次中通過轉筒表面的1點之時間係設為研磨帶之寬度除以研磨帶的轉筒之寬度方向之移動速度而得之值。另外,研磨帶之1次道次意指自轉筒之軸(寬度)方向(電解銅箔之寬度方向)之一端部至另一端部,用研磨帶將轉筒之周方向之表面研磨1次。 即,研磨時間係以下述式表示。 An electrolysis drum having a specific surface roughness Sa and/or a root mean square height Sq on the surface can be produced in the following manner. First, the surface of a titanium or stainless steel drum is ground using a grinding belt having a particle size number of 300 (P300) to 500 (P500). At this time, the polishing tape is wound at a specific width in the width direction of the drum, and the polishing belt is moved in the width direction of the drum at a specific speed, and the drum is rotated to perform polishing. The rotational speed of the surface of the drum during grinding is set to be 130 m/min to 190 m/min. Further, the polishing time is a product of the time passing through the surface of the drum (the position in the width direction) at one point in the first pass of the polishing belt and the number of passes. Further, the time during which one point of the surface of the drum passes through the first pass is set to a value obtained by dividing the width of the polishing belt by the moving speed of the rotating belt in the width direction of the rotating belt. In addition, the primary pass of the polishing tape means one end to the other end of the shaft (width) direction of the rotating cylinder (the width direction of the electrolytic copper foil), and the surface of the rotating cylinder in the circumferential direction is ground once with a polishing tape. That is, the polishing time is represented by the following formula.

研磨時間(分鐘)=每1道次之研磨帶之寬度(cm/次)/研磨帶之移動速度(cm/分鐘)×道次次數(次) Grinding time (minutes) = width of grinding belt per pass (cm/time) / moving speed of grinding belt (cm/min) × number of passes (times)

於習知電解銅箔(生箔)之製造中,研磨時間係設為1.6分鐘~3分鐘,但於本發明之實施形態中,設為3.5分鐘~10分鐘,另外,於本發明之實施形態中,於研磨時用水潤濕轉筒表面之情形時,設為6分鐘~10分鐘。作為上述研磨時間之算出例,例如於為10cm寬度之研磨帶且將移動速度設為20cm/分鐘時,轉筒表面的1點之1道次之研磨時間成為0.5分鐘。可藉由將合計之道次次數乘以研磨時間而算出(例如,0.5分鐘×10道次=5分鐘)。藉由增大研磨帶之粒度號數、及/或提高轉筒表面之旋轉速度、及/或延長研磨時間、及/或研磨時用水潤濕轉筒表面,可減小轉筒表面之表面粗糙度Sa及轉筒表面之均方根高度Sq。反之,藉由減小研磨帶之粒度號數、及/或降低轉筒表面之旋轉速度、及/或縮短研磨時間、及/或研磨時使轉筒表面乾燥,可增大轉筒表面之表面粗糙度Sa及轉筒表面之均方根高度Sq。此外,藉由延長研磨時間,可減小表面粗糙度Sa,並且以較Sa變小之程度更大之程度減小均方根高度Sq。反之,藉由縮短研磨時間,可增大表面粗糙度Sa,並且以較表面粗糙度Sa變大之程度更大之程度增大均方根高度Sq。此外,上述研磨帶之粒度號數意指用於研磨帶之研磨材之粒度。並且,該研磨材之粒度係依據FEPA(Federation of European Producers of Abrasives(歐洲磨料生產商聯合會))-標準(standard)43-1:2006,43-2:2006。 In the manufacture of the conventional electrolytic copper foil (raw foil), the polishing time is set to 1.6 minutes to 3 minutes, but in the embodiment of the present invention, it is set to 3.5 minutes to 10 minutes, and in the embodiment of the present invention, In the case where the surface of the drum is wetted with water during grinding, it is set to 6 minutes to 10 minutes. As an example of the calculation of the polishing time, for example, when the polishing belt has a width of 10 cm and the moving speed is 20 cm/min, the polishing time of one turn of the surface of the drum is 0.5 minute. It can be calculated by multiplying the total number of passes by the polishing time (for example, 0.5 minute × 10 passes = 5 minutes). The surface roughness of the drum surface can be reduced by increasing the grain size of the abrasive belt, and/or increasing the rotational speed of the drum surface, and/or extending the grinding time, and/or wetting the surface of the drum with water during grinding. Degree Sa and the root mean square height Sq of the drum surface. Conversely, the surface of the drum surface can be increased by reducing the number of grain of the abrasive belt, and/or reducing the rotational speed of the surface of the drum, and/or shortening the grinding time, and/or drying the surface of the drum during grinding. The roughness Sa and the root mean square height Sq of the surface of the drum. Further, by extending the polishing time, the surface roughness Sa can be reduced, and the root mean square height Sq can be reduced to a greater extent than Sa. On the contrary, by shortening the polishing time, the surface roughness Sa can be increased, and the root mean square height Sq can be increased to a greater extent than the surface roughness Sa becomes larger. Further, the particle size number of the above-mentioned abrasive tape means the particle size of the abrasive for the abrasive tape. Further, the particle size of the abrasive material is based on FEPA (Federation of European Producers of Abrasives) - Standard 43-1: 2006, 43-2: 2006.

另外,藉由研磨時用水潤濕轉筒表面,可減小均方根高度Sq,並且以較均方根高度Sq變小之程度更大之程度減小表面粗糙度Sa。反之,藉由研磨時使轉筒表面乾燥,可增大均方根高度Sq,並且以較均方根高度Sq變大之程度更大之程度增大表面粗糙度Sa。 Further, by wetting the surface of the drum with water during grinding, the root mean square height Sq can be reduced, and the surface roughness Sa can be reduced to a greater extent than the root mean square height Sq becomes smaller. On the other hand, by drying the surface of the drum during grinding, the root mean square height Sq can be increased, and the surface roughness Sa can be increased to a greater extent than the root mean square height Sq.

藉由使用如上所述般製作之於表面具有特定之表面粗糙度Sa及/或均方根高度Sq之電解轉筒,可製造具有特定之光澤面之表面粗糙度Sa及/或均方根高度Sq之電解銅箔(生箔)。 By using an electrolytic drum having a specific surface roughness Sa and/or a root mean square height Sq as described above, a surface roughness Sa and/or a root mean square height having a specific glossy surface can be produced. Sq electrolytic copper foil (raw foil).

此外,電解轉筒表面之表面粗糙度Sa及均方根高度Sq可以如下方式進行測定。 Further, the surface roughness Sa and the root mean square height Sq of the surface of the electrolytic drum can be measured as follows.

‧將樹脂膜(聚氯乙烯)浸漬於溶劑(丙酮)中而使其膨潤。 ‧ The resin film (polyvinyl chloride) is immersed in a solvent (acetone) to swell.

‧使膨潤後之樹脂膜與電解轉筒之表面接觸,使丙酮自樹脂膜揮發之後將樹脂膜剝離,並採集電解轉筒表面之複製品。 ‧ The swollen resin film is brought into contact with the surface of the electrolysis drum, and after the acetone is volatilized from the resin film, the resin film is peeled off, and a replica of the surface of the electrolysis drum is collected.

‧利用雷射顯微鏡對複製品進行測定,測定表面粗糙度Sa及均方根高度Sq之值。 ‧ The replica was measured using a laser microscope, and the values of the surface roughness Sa and the root mean square height Sq were measured.

並且,將所獲得之複製品之表面粗糙度Sa及均方根高度Sq之值設為電解轉筒表面之表面粗糙度Sa及均方根高度Sq。 Further, the values of the surface roughness Sa and the root mean square height Sq of the obtained replica are set as the surface roughness Sa and the root mean square height Sq of the surface of the electrolytic drum.

另一方面,為了將電解銅箔之析出面側之表面粗糙度Sa、均方根高度Sq、最大峰高度Sp、最大谷深度Sv、最大高度Sz、峰度Sku及偏斜度Ssk之至少一者控制為特定之範圍,只要調整電解液之線速度、電流密度、添加至電解液之成分之濃度即可。 On the other hand, in order to at least one of the surface roughness Sa, the root mean square height Sq, the maximum peak height Sp, the maximum valley depth Sv, the maximum height Sz, the kurtosis Sku, and the skewness Ssk on the deposition surface side of the electrolytic copper foil. The control is a specific range, and it is only necessary to adjust the linear velocity of the electrolyte, the current density, and the concentration of the component added to the electrolyte.

一般而言,於欲增大電解銅箔之析出面側之表面粗糙度Sa、均方根高度Sq、最大峰高度Sp、最大谷深度Sv、最大高度Sz、峰度Sku及偏斜度Ssk之值之情形時,只要減小電解液之線流速,或提高電流密度,或提高電解液中之氯離子之濃度,或於0~數ppm之範圍內提高電解液中之動物膠之濃度,或將具有增加表面粗糙度之作用之添加物添加至電解液中即可。另外,有上述值隨著所使用之電解轉筒之粗糙度變大而增大之傾向。 In general, the surface roughness Sa, the root mean square height Sq, the maximum peak height Sp, the maximum valley depth Sv, the maximum height Sz, the kurtosis Sku, and the skewness Ssk of the deposition surface side of the electrolytic copper foil are to be increased. In the case of a value, it is only necessary to reduce the linear flow rate of the electrolyte, or to increase the current density, or to increase the concentration of chloride ions in the electrolyte, or to increase the concentration of the animal glue in the electrolyte in the range of 0 to several ppm, or It is sufficient to add an additive having an effect of increasing the surface roughness to the electrolytic solution. Further, the above value tends to increase as the roughness of the electrolytic drum to be used becomes larger.

反之,於欲減小電解銅箔之析出面側之表面粗糙度Sa、均方根高度Sq、最大峰高度Sp、最大谷深度Sv、最大高度Sz、峰度Sku及偏斜度Ssk之值之情形 時,添加具有使電解銅箔變平滑之作用之添加物,或使電解液中之氯離子之濃度低至0或極低,或於10ppm以上之範圍內提高電解液中之動物膠之濃度即可。另外,有上述值隨著所使用之電解轉筒之粗糙度變小而降低之傾向。 On the other hand, in order to reduce the surface roughness Sa, the root mean square height Sq, the maximum peak height Sp, the maximum valley depth Sv, the maximum height Sz, the kurtosis Sku, and the skewness Ssk of the deposition surface side of the electrolytic copper foil, In this case, an additive having a function of smoothing the electrolytic copper foil is added, or the concentration of the chloride ion in the electrolytic solution is lowered to 0 or extremely low, or the concentration of the animal glue in the electrolytic solution is increased in a range of 10 ppm or more. Just fine. Further, the above value tends to decrease as the roughness of the electrolytic drum to be used becomes smaller.

<粗化處理及表面處理> <Coarsening and surface treatment>

作為表面處理,並無特別限定,可列舉:耐熱處理、防銹處理、鉻酸鹽處理、矽烷偶合處理等。 The surface treatment is not particularly limited, and examples thereof include heat-resistant treatment, rust-preventing treatment, chromate treatment, and decane coupling treatment.

此處,於本說明書中,將藉由粗化處理而形成之層稱為「粗化處理層」,將藉由耐熱處理而形成之層稱為「耐熱層」,將藉由防銹處理而形成之層稱為「防銹層」,將藉由鉻酸鹽處理而形成之層稱為「鉻酸鹽處理層」,將藉由矽烷偶合處理而形成之層稱為「矽烷偶合處理層」。 Here, in the present specification, a layer formed by roughening treatment is referred to as a "roughening layer", and a layer formed by heat-resistant treatment is referred to as a "heat-resistant layer", and is treated by rust prevention. The layer formed is referred to as a "rust-proof layer", and the layer formed by the chromate treatment is referred to as a "chromate treatment layer", and the layer formed by the coupling treatment of decane is referred to as a "decane coupling treatment layer". .

為了提高與絕緣基板(樹脂基板)之接著性,可於本發明之實施形態之電解銅箔之光澤面及析出面之至少一表面設置粗化處理層。作為粗化處理,並無特別限定,可藉由使粗化粒子電沈積至電解銅箔之表面而進行。例如,只要使銅或銅合金之粗化粒子電沈積至電解銅箔之表面即可。粗化粒子可為微細者,另外,其形狀為針狀、棒狀或粒子狀均可。粗化處理層可為由選自由銅、鎳、磷、鎢、砷、鉬、鉻、鐵、釩、鈷及鋅所組成之群中之任一單質或含有任一種以上單質之合金所構成之層等。另外,使銅或銅合金之粗化粒子電沈積之後,亦可進行利用鎳、鈷、銅、鋅之單質或合金等使二次粒子或三次粒子進一步電沈積之粗化處理。 In order to improve the adhesion to the insulating substrate (resin substrate), at least one surface of the shiny surface and the deposited surface of the electrolytic copper foil according to the embodiment of the present invention may be provided with a roughened layer. The roughening treatment is not particularly limited, and it can be carried out by electrodepositing the roughened particles onto the surface of the electrolytic copper foil. For example, it is only necessary to electrodeposit the roughened particles of copper or copper alloy to the surface of the electrolytic copper foil. The roughened particles may be fine, and the shape may be needle-shaped, rod-shaped or particulate. The roughening treatment layer may be composed of any element selected from the group consisting of copper, nickel, phosphorus, tungsten, arsenic, molybdenum, chromium, iron, vanadium, cobalt, and zinc, or an alloy containing any one or more elemental substances. Layers, etc. Further, after the roughened particles of copper or a copper alloy are electrodeposited, a roughening treatment may be further performed by further electrodepositing secondary particles or tertiary particles using a simple substance such as nickel, cobalt, copper or zinc or an alloy.

於進行粗化處理之情形時,於粗化處理層之表面形成耐熱層或防銹層,進而,於其表面形成鉻酸鹽處理層或矽烷偶合處理層。 In the case of the roughening treatment, a heat-resistant layer or a rust-preventing layer is formed on the surface of the roughened layer, and further, a chromate-treated layer or a decane-coupled layer is formed on the surface.

於不進行作為表面處理之粗化處理之情形時,於電解銅箔之表面形成耐熱層或防銹層,進而,於其表面形成有鉻酸鹽處理層或矽烷偶合處理層。 When the roughening treatment as the surface treatment is not performed, a heat-resistant layer or a rust-preventing layer is formed on the surface of the electrolytic copper foil, and further, a chromate-treated layer or a decane coupling treatment layer is formed on the surface thereof.

此外,上述耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層均可為單 層,但亦能以多層形成(例如2層以上、3層以上等)。 Further, the heat-resistant layer, the rust-preventive layer, the chromate-treated layer, and the decane coupling treatment layer may each be a single layer, but may be formed in a plurality of layers (for example, two or more layers, three or more layers, or the like).

粗化處理層可使用由包含選自硫酸烷基酯鹽、鎢離子、砷離子中之物質之至少一種以上之硫酸-硫酸銅所構成之電解浴而形成。關於粗化處理層,為了防止落粉及提高剝離強度,較佳為利用由硫酸-硫酸銅所構成之電解浴進行鍍覆。 The roughening treatment layer can be formed using an electrolytic bath composed of at least one of sulfuric acid-copper sulfate containing at least one selected from the group consisting of an alkyl sulfate salt, a tungsten ion, and an arsenic ion. The roughening treatment layer is preferably plated by an electrolytic bath composed of sulfuric acid-copper sulfate in order to prevent falling powder and to improve peeling strength.

其具體之處理條件如下所述。 The specific processing conditions are as follows.

(液體組成1) (liquid composition 1)

CuSO4‧5H2O:39.3~120g/L CuSO 4 ‧5H 2 O: 39.3~120g/L

H2SO4:10~150g/L H 2 SO 4 : 10~150g/L

Na2WO4‧2H2O:0~90mg/L Na 2 WO 4 ‧2H 2 O: 0~90mg/L

W:0~50mg/L W: 0~50mg/L

十二烷基硫酸鈉:0~50mg Sodium lauryl sulfate: 0~50mg

As:0~2000mg/L As: 0~2000mg/L

(電鍍條件1) (plating condition 1)

溫度:30~70℃ Temperature: 30~70°C

(電流條件1) (current condition 1)

電流密度:25~110A/dm2 Current density: 25~110A/dm 2

鍍覆時間:0.5~20秒 Plating time: 0.5~20 seconds

(液體組成2) (liquid composition 2)

CuSO4‧5H2O:78~314g/L CuSO 4 ‧5H 2 O: 78~314g/L

H2SO4:50~200g/L H 2 SO 4 : 50~200g/L

(電鍍條件2) (plating condition 2)

溫度:30~70℃ Temperature: 30~70°C

(電流條件2) (current condition 2)

電流密度:5~50A/dm2 Current density: 5~50A/dm 2

粗化庫侖量:50~300As/dm2 Coarse coulomb amount: 50~300As/dm 2

鍍覆時間:1~60秒 Plating time: 1~60 seconds

於形成銅-鈷-鎳合金鍍覆層作為粗化處理層之情形時,較佳為藉由電鍍,而使其成為如含量為15mg/dm2~40mg/dm2之銅、含量為100μg/dm2~3000μg/dm2之鈷、及含量為100μg/dm2~1500μg/dm2之鎳般之3元系合金層。若Co含量未達100μg/dm2,則存在耐熱性及蝕刻性降低之情況。另一方面,若Co含量超過3000μg/dm2,則於必須考慮磁性之影響之情形時欠佳,存在產生蝕刻斑並且耐酸性及耐化學品性降低之情況。另外,若Ni含量未達100μg/dm2,則存在耐熱性降低之情況。另一方面,若Ni含量超過1500μg/dm2,則存在蝕刻殘留物變多之情況。較佳之Co含量為1000μg/dm2~2500μg/dm2,較佳之Ni含量為500μg/dm2~1200μg/dm2In the case of forming a copper-cobalt-nickel alloy plating layer as a roughening layer, it is preferably made into a copper content of 15 mg/dm 2 to 40 mg/dm 2 by electroplating, and the content is 100 μg/ dm 2 ~ 3000μg / dm 2 of cobalt, and the content is 100μg / dm 2 ~ 1500μg / dm 2 of Ni as the ternary alloy layer. When the Co content is less than 100 μg/dm 2 , heat resistance and etching property may be lowered. On the other hand, when the Co content exceeds 3000 μg/dm 2 , it is not preferable in the case where the influence of magnetism is necessary, and there is a case where an etching spot is generated and acid resistance and chemical resistance are lowered. Further, when the Ni content is less than 100 μg/dm 2 , the heat resistance may be lowered. On the other hand, when the Ni content exceeds 1500 μg/dm 2 , there is a case where the etching residue is increased. The preferred Co content is 1000μg / dm 2 ~ 2500μg / dm 2, Ni content is preferably of 500μg / dm 2 ~ 1200μg / dm 2.

此處,於本說明書中,「蝕刻斑」意指於利用氯化銅進行蝕刻之情形時,Co未溶解而殘留。另外,「蝕刻殘留物」意指於利用氯化銨進行鹼蝕刻之情形時,Ni未溶解而殘留。 Here, in the present specification, "etching spot" means that when etching is performed using copper chloride, Co remains without being dissolved. In addition, the "etching residue" means that when alkali etching is performed using ammonium chloride, Ni remains without being dissolved.

用以形成此種3元系銅-鈷-鎳合金鍍覆層之鍍浴及鍍覆條件之一例如下所述:鍍浴組成:10~20g/L之Cu、1~10g/L之Co、1~10g/L之Ni One of the plating baths and plating conditions for forming such a ternary copper-cobalt-nickel alloy plating layer is as follows: plating bath composition: 10 to 20 g/L of Cu, 1 to 10 g/L of Co, 1~10g/L of Ni

pH:1~4 pH: 1~4

溫度:30~50℃ Temperature: 30~50°C

電流密度:20~30A/dm2 Current density: 20~30A/dm 2

鍍覆時間:1~5秒 Plating time: 1~5 seconds

用以形成此種3元系銅-鈷-鎳合金鍍覆層之鍍浴及鍍覆條件之另一例如下所述: 鍍浴組成:10~20g/L之Cu、1~10g/L之Co、1~10g/L之Ni Another plating bath and plating conditions for forming such a ternary copper-cobalt-nickel alloy plating layer are as follows: plating bath composition: 10-20 g/L of Cu, 1 to 10 g/L of Co , 1~10g/L of Ni

pH:1~4 pH: 1~4

溫度:30~50℃ Temperature: 30~50°C

電流密度:30~45A/dm2 Current density: 30~45A/dm 2

鍍覆時間:0.1~2.0秒 Plating time: 0.1~2.0 seconds

此外,於形成上述粗化處理層之粗化處理中,藉由縮短鍍覆時間,可使光澤面側之表面粗糙度Sa及/或均方根高度Sq變小。另一方面,於形成上述粗化處理層之表面處理中,藉由延長鍍覆時間,可使光澤面側之表面粗糙度Sa及/或均方根高度Sq變大。 Further, in the roughening treatment for forming the roughened layer, the surface roughness Sa and/or the root mean square height Sq on the glossy surface side can be made small by shortening the plating time. On the other hand, in the surface treatment for forming the roughened layer, the surface roughness Sa and/or the root mean square height Sq on the glossy side can be increased by extending the plating time.

另外,於形成上述粗化處理層之粗化處理中,藉由提高電流密度且大幅縮短鍍覆時間,可使光澤面側之表面粗糙度Sa及/或均方根高度Sq變得更小。另一方面,於形成上述粗化處理層之處理中,藉由提高電流密度且延長鍍覆時間,可使光澤面側之表面粗糙度Sa及/或均方根高度Sq變得更大。 Further, in the roughening treatment for forming the roughened layer, the surface roughness Sa and/or the root mean square height Sq on the glossy surface side can be made smaller by increasing the current density and greatly shortening the plating time. On the other hand, in the process of forming the roughened layer, the surface roughness Sa and/or the root mean square height Sq on the glossy side can be made larger by increasing the current density and extending the plating time.

亦可於本發明之實施形態之電解銅箔之光澤面側及析出面側之至少一側設置表面處理層。作為表面處理層,並無特別限定,較佳為選自由耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中之1種以上之層。一般而言,於在電解銅箔之光澤面側及析出面側之至少一側形成有粗化處理層之情形時,於其表面形成耐熱層或防銹層,於其上形成鉻酸鹽處理層或矽烷偶合處理層。 Further, a surface treatment layer may be provided on at least one of the shiny side and the deposited side of the electrodeposited copper foil according to the embodiment of the present invention. The surface treatment layer is not particularly limited, and is preferably one or more layers selected from the group consisting of a heat-resistant layer, a rust-preventive layer, a chromate-treated layer, and a decane coupling treatment layer. In general, when a roughened layer is formed on at least one of the shiny side and the deposited side of the electrolytic copper foil, a heat-resistant layer or a rust-preventing layer is formed on the surface thereof, and chromate treatment is formed thereon. The layer or decane coupling treatment layer.

本發明之實施形態之電解銅箔亦可於光澤面側及析出面側之至少一側設置樹脂層。該樹脂層一般形成於粗化處理層或表面處理層上。作為樹脂層,並無特別限定,較佳為絕緣樹脂層。 In the electrodeposited copper foil according to the embodiment of the present invention, a resin layer may be provided on at least one side of the gloss side and the deposition side. The resin layer is generally formed on the roughened layer or the surface treated layer. The resin layer is not particularly limited, and is preferably an insulating resin layer.

作為耐熱層及/或防銹層,並無特別限定,可使用公知者。耐熱層及/或防銹層例如可為包含選自由鎳、鋅、錫、鈷、鉬、銅、鎢、磷、砷、 鉻、釩、鈦、鋁、金、銀、鉑族元素、鐵及鉭所組成之群中之1種以上之元素之層,亦可為由選自由鎳、鋅、錫、鈷、鉬、銅、鎢、磷、砷、鉻、釩、鈦、鋁、金、銀、鉑族元素、鐵及鉭所組成之群中之1種以上之元素所構成之金屬層或合金層。另外,耐熱層及/或防銹層亦可包含含有選自由鎳、鋅、錫、鈷、鉬、銅、鎢、磷、砷、鉻、釩、鈦、鋁、金、銀、鉑族元素、鐵及鉭所組成之群中之1種以上之元素之氧化物、氮化物或矽化物。另外,耐熱層及/或防銹層可為銅-鋅合金層、鋅-鎳合金層、鎳-鈷合金層、銅-鎳合金層、鉻-鋅合金層。另外,耐熱層及/或防銹層亦可為包含鎳-鋅合金之層。另外,耐熱層及/或防銹層亦可為鎳-鋅合金層。於鎳-鋅合金層之情形時,較佳為除了不可避免之雜質以外,含有50質量%~99質量%之鎳、50質量%~1質量%之鋅。鎳-鋅合金層之鋅及鎳之合計含量較佳為5mg/m2~1000mg/m2,更佳為10mg/m2~500mg/m2,進而較佳為20mg/m2~100mg/m2。另外,包含鎳-鋅合金之層或鎳-鋅合金層之鎳含量與鋅含量之比(=鎳含量/鋅含量)較佳為1.5~10。另外,包含鎳-鋅合金之層或鎳-鋅合金層之鎳含量較佳為0.5mg/m2~500mg/m2,更佳為1mg/m2~50mg/m2The heat-resistant layer and/or the rust-preventing layer are not particularly limited, and those known to the public can be used. The heat-resistant layer and/or the rust-proof layer may be, for example, selected from the group consisting of nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, silver, platinum group elements, iron, and The layer of one or more elements of the group of yttrium may also be selected from the group consisting of nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, silver. A metal layer or an alloy layer composed of one or more elements selected from the group consisting of a platinum group element, iron, and lanthanum. In addition, the heat-resistant layer and/or the rust-preventing layer may further comprise a component selected from the group consisting of nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, silver, and platinum. An oxide, a nitride or a telluride of one or more elements of the group consisting of iron and strontium. Further, the heat-resistant layer and/or the rust-preventive layer may be a copper-zinc alloy layer, a zinc-nickel alloy layer, a nickel-cobalt alloy layer, a copper-nickel alloy layer, or a chromium-zinc alloy layer. Further, the heat-resistant layer and/or the rust-preventive layer may be a layer containing a nickel-zinc alloy. Further, the heat resistant layer and/or the rustproof layer may be a nickel-zinc alloy layer. In the case of the nickel-zinc alloy layer, it is preferable to contain 50% by mass to 99% by mass of nickel and 50% by mass to 1% by mass of zinc in addition to unavoidable impurities. The total content of zinc and nickel in the nickel-zinc alloy layer is preferably from 5 mg/m 2 to 1000 mg/m 2 , more preferably from 10 mg/m 2 to 500 mg/m 2 , still more preferably from 20 mg/m 2 to 100 mg/m. 2 . Further, the ratio of the nickel content to the zinc content (=nickel content/zinc content) of the layer containing the nickel-zinc alloy or the nickel-zinc alloy layer is preferably 1.5 to 10. Further, the nickel content of the layer containing the nickel-zinc alloy or the nickel-zinc alloy layer is preferably from 0.5 mg/m 2 to 500 mg/m 2 , more preferably from 1 mg/m 2 to 50 mg/m 2 .

例如,耐熱層及/或防銹層可為將含量為1mg/m2~100mg/m2、較佳為5mg/m2~50mg/m2之鎳或鎳合金層、及含量為1mg/m2~80mg/m2、較佳為5mg/m2~40mg/m2之錫層依序積層而成者。鎳合金層可由鎳-鉬、鎳-鋅、鎳-鉬-鈷中之任一種所構成。另外,關於耐熱層及/或防銹層,鎳或鎳合金與錫之合計含量較佳為2mg/m2~150mg/m2,更佳為10mg/m2~70mg/m2。另外,耐熱層及/或防銹層較佳為[鎳或鎳合金中之鎳含量]/[錫含量]=0.25~10,更佳為0.33~3。 For example, the heat-resistant layer and/or the rust-preventive layer may be a nickel or nickel alloy layer having a content of 1 mg/m 2 to 100 mg/m 2 , preferably 5 mg/m 2 to 50 mg/m 2 , and a content of 1 mg/m. The tin layer of 2 to 80 mg/m 2 , preferably 5 mg/m 2 to 40 mg/m 2 , is sequentially laminated. The nickel alloy layer may be composed of any one of nickel-molybdenum, nickel-zinc, and nickel-molybdenum-cobalt. Further, the heat-resistant layer and/or the rust-preventive layer preferably have a total content of nickel or a nickel alloy and tin of from 2 mg/m 2 to 150 mg/m 2 , more preferably from 10 mg/m 2 to 70 mg/m 2 . Further, the heat-resistant layer and/or the rust-preventive layer is preferably [nickel content in nickel or nickel alloy] / [tin content] = 0.25 to 10, more preferably 0.33 to 3.

鉻酸鹽處理層係利用含有鉻酸酐、鉻酸、重鉻酸、鉻酸鹽或重鉻酸鹽之液體處理過之層。鉻酸鹽處理層亦可包含鈷、鐵、鎳、鉬、鋅、鉭、 銅、鋁、磷、鎢、錫、砷、鈦等元素(可為金屬、合金、氧化物、氮化物、硫化物等任何形態)。作為鉻酸鹽處理層之具體例,可列舉:利用鉻酸酐或重鉻酸鉀水溶液處理過之鉻酸鹽處理層、或利用含有鉻酸酐或重鉻酸鉀及鋅之處理液處理過之鉻酸鹽處理層等。 The chromate treatment layer is a layer treated with a liquid containing chromic anhydride, chromic acid, dichromic acid, chromate or dichromate. The chromate treatment layer may also contain elements such as cobalt, iron, nickel, molybdenum, zinc, bismuth, copper, aluminum, phosphorus, tungsten, tin, arsenic, titanium (may be metals, alloys, oxides, nitrides, sulfides). Any form). Specific examples of the chromate treatment layer include a chromate treatment layer treated with an aqueous solution of chromic anhydride or potassium dichromate, or a chromium treated with a treatment liquid containing chromic anhydride or potassium dichromate and zinc. Acid salt treatment layer, etc.

作為用於矽烷偶合處理之矽烷偶合劑,並無特別限定,可使用公知者。作為矽烷偶合劑之例,可列舉:胺基系矽烷偶合劑、環氧系矽烷偶合劑、甲基丙烯醯氧基系矽烷偶合劑、巰基系矽烷偶合劑等。具體而言,作為矽烷偶合劑,可使用:乙烯基三甲氧基矽烷、乙烯基苯基三甲氧基矽烷、γ-甲基丙烯醯氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、4-縮水甘油基丁基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、N-β-(胺基乙基)-γ-胺基丙基三甲氧基矽烷、N-3-(4-(3-胺基丙氧基)丁氧基)丙基-3-胺基丙基三甲氧基矽烷、咪唑矽烷、三矽烷、γ-巰基丙基三甲氧基矽烷等。此外,矽烷偶合劑可單獨使用或混合2種以上而使用。另外,上述各種矽烷偶合劑之中,較佳為使用胺基系矽烷偶合劑或環氧系矽烷偶合劑。 The decane coupling agent used for the decane coupling treatment is not particularly limited, and a known one can be used. Examples of the decane coupling agent include an amine decane coupling agent, an epoxy decane coupling agent, a methacryloxy decane coupling agent, and a fluorenyl decane coupling agent. Specifically, as the decane coupling agent, vinyl trimethoxy decane, vinyl phenyl trimethoxy decane, γ-methyl propylene methoxy propyl trimethoxy decane, γ-glycidoxy propyl propylene can be used. Trimethoxy decane, 4-glycidyl butyl trimethoxy decane, γ-aminopropyl triethoxy decane, N-β-(aminoethyl)-γ-aminopropyltrimethoxy Decane, N-3-(4-(3-aminopropoxy)butoxy)propyl-3-aminopropyltrimethoxydecane, imidazolium, three Decane, γ-mercaptopropyltrimethoxydecane, and the like. Further, the decane coupling agent may be used singly or in combination of two or more. Further, among the above various decane coupling agents, an amine decane coupling agent or an epoxy decane coupling agent is preferably used.

作為胺基系矽烷偶合劑之具體例,可列舉:N-(2-胺基乙基)-3-胺基丙基三甲氧基矽烷、3-(N-苯乙烯基甲基-2-胺基乙基胺基)丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、雙(2-羥基乙基)-3-胺基丙基三乙氧基矽烷、胺基丙基三甲氧基矽烷、N-甲基胺基丙基三甲氧基矽烷、N-苯基胺基丙基三甲氧基矽烷、N-(3-丙烯醯氧基-2-羥基丙基)-3-胺基丙基三乙氧基矽烷、4-胺基丁基三乙氧基矽烷、(胺基乙基胺基甲基)苯乙基三甲氧基矽烷、N-(2-胺基乙基-3-胺基丙基)三甲氧基矽烷、N-(2-胺基乙基-3-胺基丙基)三(2-乙基己氧基)矽烷、6-(胺基己基胺基丙基)三甲氧基矽烷、胺基苯基三甲氧基矽烷、3-(1-胺基丙氧基)-3,3-二甲基-1-丙烯基三甲氧基矽烷、3-胺基丙基三(甲氧基乙氧基乙氧基)矽烷、3-胺基丙基三乙氧基矽烷、3-胺基丙基三甲氧基矽烷、ω-胺基十一烷基三甲氧 基矽烷、3-(2-N-苄基胺基乙基胺基丙基)三甲氧基矽烷、雙(2-羥基乙基)-3-胺基丙基三乙氧基矽烷、(N,N-二乙基-3-胺基丙基)三甲氧基矽烷、(N,N-二甲基-3-胺基丙基)三甲氧基矽烷、N-甲基胺基丙基三甲氧基矽烷、N-苯基胺基丙基三甲氧基矽烷、3-(N-苯乙烯基甲基-2-胺基乙基胺基)丙基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、N-β-(胺基乙基)-γ-胺基丙基三甲氧基矽烷、N-3-(4-(3-胺基丙氧基)丁氧基)丙基-3-胺基丙基三甲氧基矽烷等。 Specific examples of the amine-based decane coupling agent include N-(2-aminoethyl)-3-aminopropyltrimethoxydecane and 3-(N-styrylmethyl-2-amine Ethylethylamino)propyltrimethoxydecane, 3-aminopropyltriethoxydecane, bis(2-hydroxyethyl)-3-aminopropyltriethoxydecane, aminopropyl Trimethoxydecane, N-methylaminopropyltrimethoxydecane, N-phenylaminopropyltrimethoxydecane, N-(3-propenyloxy-2-hydroxypropyl)-3- Aminopropyltriethoxydecane, 4-aminobutyltriethoxydecane, (aminoethylaminomethyl)phenethyltrimethoxydecane, N-(2-aminoethyl- 3-aminopropyl)trimethoxynonane, N-(2-aminoethyl-3-aminopropyl)tris(2-ethylhexyloxy)decane, 6-(aminohexylaminopropyl) Trimethoxy decane, aminophenyl trimethoxy decane, 3-(1-aminopropoxy)-3,3-dimethyl-1-propenyltrimethoxydecane, 3-aminopropyl Tris(methoxyethoxyethoxy)decane, 3-aminopropyltriethoxydecane, 3-aminopropyltrimethoxydecane, ω-aminoundecyltrimethoxydecane 3-(2-N-benzyl Aminoethylaminopropyl)trimethoxydecane, bis(2-hydroxyethyl)-3-aminopropyltriethoxydecane, (N,N-diethyl-3-aminopropyl) Trimethoxy decane, (N,N-dimethyl-3-aminopropyl)trimethoxynonane, N-methylaminopropyltrimethoxydecane, N-phenylaminopropyltrimethoxy Baseline, 3-(N-styrylmethyl-2-aminoethylamino)propyltrimethoxydecane, γ-aminopropyltriethoxydecane, N-β-(Amino B And γ-aminopropyltrimethoxydecane, N-3-(4-(3-aminopropoxy)butoxy)propyl-3-aminopropyltrimethoxydecane, and the like.

關於矽烷偶合處理層,適宜為於以矽原子換算計較佳為0.05mg/m2~200mg/m2、更佳為0.15mg/m2~20mg/m2、進而較佳為0.3mg/m2~2.0mg/m2之範圍內進行設定。於為該範圍之情形時,可進一步提高絕緣基板(樹脂基板)與電解銅箔之密接性。 The decane coupling treatment layer is preferably 0.05 mg/m 2 to 200 mg/m 2 , more preferably 0.15 mg/m 2 to 20 mg/m 2 , still more preferably 0.3 mg/m 2 in terms of ruthenium atom. Set within the range of ~2.0 mg/m 2 . In the case of this range, the adhesion between the insulating substrate (resin substrate) and the electrolytic copper foil can be further improved.

樹脂層可為接著劑之層,亦可為接著用之半硬化狀態(B階段狀態)之絕緣樹脂層。半硬化狀態(B階段狀態)包括即便用手指觸碰其表面亦無黏著感,可將該絕緣樹脂層重疊而保管,進而,若受到加熱處理,則會產生硬化反應之狀態。 The resin layer may be a layer of an adhesive or an insulating resin layer in a semi-hardened state (B-stage state) to be used next. The semi-hardened state (B-stage state) includes that the insulating resin layer can be stacked and stored even if it is touched by a finger, and the insulating resin layer can be stored in a state of hardening reaction.

另外,樹脂層可為包含熱硬化性樹脂或熱塑性樹脂之層。熱硬化性樹脂及熱塑性樹脂之種類並無特別限定,例如可列舉:環氧樹脂、聚醯亞胺樹脂、多官能性氰酸酯化合物、順丁烯二醯亞胺化合物、聚乙烯醇縮醛樹脂、聚胺酯樹脂(polyurethane resin)等。其等可單獨使用或混合2種以上而使用。 Further, the resin layer may be a layer containing a thermosetting resin or a thermoplastic resin. The type of the thermosetting resin and the thermoplastic resin is not particularly limited, and examples thereof include an epoxy resin, a polyimide resin, a polyfunctional cyanate compound, a maleimide compound, and a polyvinyl acetal. Resin, polyurethane resin, and the like. These can be used individually or in mixture of 2 or more types.

樹脂層由包含公知之樹脂、樹脂硬化劑、化合物、硬化促進劑、介電體(可使用包含無機化合物及/或有機化合物之介電體、包含金屬氧化物之介電體等任何介電體)、反應觸媒、交聯劑、聚合物、預浸體、骨架材料等之組成物形成為宜。另外,樹脂層例如亦可使用國際公開第2008/004399號、國際公開第2008/053878號、國際公開第2009/084533號、日本特開平11-5828號公報、日本特開平11-140281號公報、日本專利第3184485號公報、國際公開第 97/02728號、日本專利第3676375號公報、日本特開2000-43188號公報、日本專利第3612594號公報、日本特開2002-179772號公報、日本特開2002-359444號公報、日本特開2003-304068號公報、日本專利第3992225號公報、日本特開2003-249739號公報、日本專利第4136509號公報、日本特開2004-82687號公報、日本專利第4025177號公報、日本特開2004-349654號公報、日本專利第4286060號公報、日本特開2005-262506號公報、日本專利第4570070號公報、日本特開2005-53218號公報、日本專利第3949676號公報、日本專利第4178415號公報、國際公開第2004/005588號、日本特開2006-257153號公報、日本特開2007-326923號公報、日本特開2008-111169號公報、日本專利第5024930號公報、國際公開第2006/028207號、日本專利第4828427號公報、日本特開2009-67029號公報、國際公開第2006/134868號、日本專利第5046927號公報、日本特開2009-173017號公報、國際公開第2007/105635號、日本專利第5180815號公報、國際公開第2008/114858號、國際公開第2009/008471號、日本特開2011-14727號公報、國際公開第2009/001850號、國際公開第2009/145179號、國際公開第2011/068157號、日本特開2013-19056號公報中記載之物質(樹脂、樹脂硬化劑、化合物、硬化促進劑、介電體、反應觸媒、交聯劑、聚合物、預浸體、骨架材料等)及/或樹脂層之形成方法、形成裝置而形成。 The resin layer is composed of a known resin, a resin hardener, a compound, a hardening accelerator, a dielectric (a dielectric containing an inorganic compound and/or an organic compound, a dielectric containing a metal oxide, or the like) It is preferred to form a composition of a reaction catalyst, a crosslinking agent, a polymer, a prepreg, a skeleton material or the like. In addition, the resin layer may be, for example, International Publication No. 2008/004399, International Publication No. 2008/053878, International Publication No. 2009/084533, Japanese Laid-Open Patent Publication No. Hei No. Hei No. Hei. Japanese Patent No. 3,184,485, International Publication No. 97/02728, Japanese Patent No. 3676375, Japanese Patent Laid-Open No. 2000-43188, Japanese Patent No. 3612594, Japanese Patent Laid-Open No. 2002-179772, Japanese Patent Laid-Open Japanese Patent Publication No. 2003-359444, Japanese Patent Publication No. 2003-304068, Japanese Patent No. 3992225, Japanese Patent Laid-Open No. 2003-249739, Japanese Patent No. 4136509, Japanese Patent Application Publication No. 2004-82687, Japanese Patent No. Japanese Patent No. 4025177, Japanese Patent Publication No. 2004-349654, Japanese Patent No. 4,286,060, Japanese Patent Laid-Open Publication No. 2005-262506, Japanese Patent No. 4570070, Japanese Patent Laid-Open No. 2005-53218, Japanese Patent No. 3949676 Japanese Patent No. 4,174,415, International Publication No. 2004/005588, Japanese Laid-Open Patent Publication No. 2006-257153, Japanese Laid-Open Patent Publication No. 2007-326923 Japanese Patent No. 50-249169, Japanese Patent No. 5024930, International Publication No. 2006/028207, Japanese Patent No. 4828427, Japanese Patent Laid-Open No. 2009-67029, International Publication No. 2006/134868, Japanese Patent No. 5046927 Bulletin, Japanese Laid-Open Patent Publication No. 2009-173017, International Publication No. 2007/105635, Japanese Patent No. 5180815, International Publication No. 2008/114858, International Publication No. 2009/008471, Japanese Patent Laid-Open No. 2011-14727 Substances (resin, resin curing agent, compound, hardening accelerator, and the like) disclosed in Japanese Laid-Open Patent Publication No. 2009/001850, International Publication No. 2009/145179, International Publication No. 2011/068157, and JP-A-2013-19056 It is formed by a method of forming a dielectric body, a reaction catalyst, a crosslinking agent, a polymer, a prepreg, a skeleton material, and the like, and/or a resin layer.

例如,將樹脂溶解於甲基乙基酮(MEK)、甲苯等溶劑中而製成樹脂液,利用輥式塗佈法等公知之方法將其塗佈於電解銅箔、粗化處理層或表面處理層上,繼而,視需要進行加熱乾燥而將溶劑去除,藉此,使其成為B階段狀態。乾燥例如使用熱風乾燥爐即可,乾燥溫度為100℃~250℃、較佳為130℃~200℃即可。 For example, the resin is dissolved in a solvent such as methyl ethyl ketone (MEK) or toluene to prepare a resin liquid, which is applied to an electrolytic copper foil, a roughened layer or a surface by a known method such as a roll coating method. On the treatment layer, the solvent is removed by heating and drying as needed, thereby making it a B-stage state. Drying may be carried out, for example, using a hot air drying oven, and the drying temperature may be from 100 ° C to 250 ° C, preferably from 130 ° C to 200 ° C.

具有樹脂層之電解銅箔係以如下態樣使用:於使該樹脂層與絕緣基板(樹脂基板)重疊後,將整體熱壓接而使樹脂層熱硬化,其後,形成特 定之配線圖案。 The electrolytic copper foil having a resin layer is used in such a manner that after the resin layer and the insulating substrate (resin substrate) are superposed, the entire resin layer is thermocompression bonded to thermally cure the resin layer, and thereafter, a specific wiring pattern is formed.

若使用上述附樹脂層之電解銅箔,則可減少多層印刷配線基板之製造時之預浸體材料之使用片數。並且,可將樹脂層之厚度設為可確保層間絕緣之厚度,或者即便完全不使用預浸體材料,亦可製造覆銅積層板。另外,亦可將絕緣樹脂底漆塗佈於基材之表面而進一步改善表面之平滑性。 When the above-mentioned electrolytic copper foil with a resin layer is used, the number of sheets of the prepreg material used in the production of the multilayer printed wiring board can be reduced. Further, the thickness of the resin layer can be set to ensure the thickness of the interlayer insulation, or the copper-clad laminate can be produced even if the prepreg material is not used at all. Further, an insulating resin primer may be applied to the surface of the substrate to further improve the smoothness of the surface.

此外,於不使用預浸體材料之情形時,有如下優點:節約預浸體材料之材料成本,另外,積層步驟亦簡化,故而於經濟面有利,並且,僅以相當於預浸體材料之厚度製造之多層印刷配線基板之厚度變薄,可製造1層之厚度為100μm以下之極薄之多層印刷配線基板。 In addition, when the prepreg material is not used, the following advantages are obtained: the material cost of the prepreg material is saved, and the lamination step is also simplified, so that it is advantageous in the economical aspect, and is only equivalent to the prepreg material. The thickness of the multilayer printed wiring board manufactured by the thickness is reduced, and it is possible to manufacture a very thin multilayer printed wiring board having a thickness of 100 μm or less.

樹脂層之厚度並無特別限定,較佳為0.1μm~80μm。若樹脂層之厚度變得薄於0.1μm,則接著力降低,在不介置預浸體材料之情況下將附樹脂層之電解銅箔積層於具備內層材料之基材時,存在難以確保與內層材料之電路之間之層間絕緣之情況。另一方面,若使樹脂層之厚度厚於80μm,則難以利用1次塗佈步驟便形成目標厚度之樹脂層,耗費多餘之材料費及步驟數,故而於經濟面不利。進而,關於所形成之樹脂層,其可撓性較差,故而存在如下情況:於操作時易於發生龜裂等,另外,與內層材料之熱壓接時會導致過度之樹脂流動而難以順利地積層。 The thickness of the resin layer is not particularly limited, but is preferably 0.1 μm to 80 μm. When the thickness of the resin layer is made thinner than 0.1 μm, the adhesion force is lowered, and when the electrodeposited copper foil with the resin layer is laminated on the substrate having the inner layer material without interposing the prepreg material, it is difficult to ensure The case of interlayer insulation between the circuit and the inner layer material. On the other hand, when the thickness of the resin layer is made thicker than 80 μm, it is difficult to form the resin layer of the target thickness by one application step, and the extra material cost and the number of steps are consumed, which is disadvantageous in terms of economy. Further, since the resin layer formed is inferior in flexibility, cracking or the like is likely to occur during handling, and excessive pressure of the resin may cause excessive resin flow during the thermal pressure bonding of the inner layer material to make it difficult to smoothly Laminated.

另外,作為附樹脂層之電解銅箔之另一製品形態,亦可以將半硬化狀態之樹脂層形成於光澤面或表面處理層上之形式販售。 Further, as another form of the electrolytic copper foil with a resin layer, a resin layer in a semi-hardened state may be formed on a glossy surface or a surface treatment layer.

進而,藉由將電子零件類搭載於印刷配線板,而完成印刷電路板。於本說明書中,「印刷配線板」包括搭載有電子零件類之印刷配線板、印刷電路板、印刷基板、軟性印刷配線板及剛性印刷配線板。 Further, the printed circuit board is completed by mounting the electronic component on the printed wiring board. In the present specification, the "printed wiring board" includes a printed wiring board on which electronic components are mounted, a printed circuit board, a printed circuit board, a flexible printed wiring board, and a rigid printed wiring board.

另外,可使用印刷配線板製作電子機器,亦可使用搭載有電子零件類之印刷電路板製作電子機器,亦可使用搭載有電子零件類之印刷基板製作電子機 器。以下,示出若干個使用本發明之實施形態之電解銅箔之印刷配線板之製造步驟之例。 Further, an electronic device can be produced using a printed wiring board, or an electronic device can be manufactured using a printed circuit board on which electronic components are mounted, or an electronic device can be produced using a printed circuit board on which electronic components are mounted. Hereinafter, an example of a manufacturing procedure of a plurality of printed wiring boards using the electrolytic copper foil of the embodiment of the present invention will be described.

本發明之實施形態之印刷配線板之製造方法包含如下步驟:將本發明之實施形態之電解銅箔與絕緣基板積層而形成覆銅積層板之後,藉由半加成法、改良半加成法、部分加成法或減成法中之任一方法而形成電路。此處,絕緣基板亦可設為含內層電路者。 A method for producing a printed wiring board according to an embodiment of the present invention includes the steps of: forming a copper-clad laminate by laminating an electrolytic copper foil according to an embodiment of the present invention and an insulating substrate, and then improving the semi-additive method by a semi-additive method A circuit is formed by any of a partial addition method or a subtractive method. Here, the insulating substrate may be a circuit including an inner layer.

於本說明書中,「半加成法」意指如下方法:於絕緣基板或銅箔晶種層上進行較薄之無電解鍍覆,形成圖案之後,使用電鍍及蝕刻形成導體圖案。 In the present specification, the "semi-additive method" means a method in which thin electroless plating is performed on an insulating substrate or a copper foil seed layer, and after forming a pattern, a conductor pattern is formed by plating and etching.

因此,使用半加成法之本發明之實施形態之印刷配線板之製造方法於一態樣中包含如下步驟:將本發明之實施形態之電解銅箔與絕緣基板(樹脂基板)積層之步驟;藉由使用酸等腐蝕溶液之蝕刻或電漿等方法而將電解銅箔全部去除之步驟;於藉由利用蝕刻去除電解銅箔而露出之樹脂設置通孔及/或盲孔之步驟;對包含通孔及/或盲孔之區域進行除膠渣(desmear)處理之步驟;對於樹脂、以及包含通孔及/或盲孔之區域設置無電解鍍覆層之步驟;於無電解鍍覆層上設置抗鍍覆層之步驟;對抗鍍覆層進行曝光之後,將供形成電路之區域之抗鍍覆層去除之步驟;於去除了抗鍍覆層之供形成電路之區域設置電鍍層之步驟;去除抗鍍覆層之步驟;及藉由快速蝕刻(flash etching)等而將位於供形成電路之區域以外之區域之無電解鍍覆層去除之步驟。 Therefore, the method for producing a printed wiring board according to an embodiment of the present invention using a semi-additive method includes the following steps: a step of laminating an electrolytic copper foil according to an embodiment of the present invention and an insulating substrate (resin substrate); a step of removing all of the electrolytic copper foil by etching or plasma etching using an etching solution such as an acid; a step of providing a via hole and/or a blind via a resin exposed by etching to remove the electrolytic copper foil; a step of desmear treatment in the region of the through hole and/or the blind hole; a step of providing an electroless plating layer on the resin and a region including the through hole and/or the blind hole; on the electroless plating layer a step of providing a plating resist layer; a step of removing the plating resist layer for forming a region of the circuit after exposing the plating layer; and a step of disposing the plating layer in a region where the plating resist layer is formed for forming the circuit; a step of removing the plating resist layer; and a step of removing the electroless plating layer located in a region other than the region where the circuit is formed by flash etching or the like.

使用半加成法之本發明之實施形態之印刷配線板之製造方法於 另一態樣中包含如下步驟:將本發明之實施形態之電解銅箔與絕緣基板積層之步驟;於電解銅箔及絕緣基板(樹脂基板)設置通孔及/或盲孔之步驟;對包含通孔及/或盲孔之區域進行除膠渣處理之步驟;藉由使用酸等腐蝕溶液之蝕刻或電漿等方法而將電解銅箔全部去除之步驟;對於藉由利用蝕刻等去除電解銅箔而露出之樹脂、以及包含通孔及/或盲孔之區域設置無電解鍍覆層之步驟;於無電解鍍覆層上設置抗鍍覆層之步驟;對抗鍍覆層進行曝光之後,將供形成電路之區域之抗鍍覆層去除之步驟;於去除了抗鍍覆層之供形成電路之區域設置電鍍層之步驟;去除抗鍍覆層之步驟;及藉由快速蝕刻等而將位於供形成電路之區域以外之區域之無電解鍍覆層去除之步驟。 In another aspect, the method for producing a printed wiring board according to an embodiment of the present invention using a semi-additive method includes the steps of: laminating an electrolytic copper foil according to an embodiment of the present invention and an insulating substrate; and electrolytic copper foil and a step of providing a through hole and/or a blind hole in an insulating substrate (resin substrate); a step of removing a slag treatment on a region including the through hole and/or the blind hole; etching or plasma etching using an etching solution using an acid or the like a step of removing all of the electrolytic copper foil; a step of providing an electroless plating layer on a resin exposed by removing the electrolytic copper foil by etching or the like, and a region including the through hole and/or the blind hole; and electroless plating a step of providing a plating resist layer on the layer; a step of removing the plating resist layer for forming a region of the circuit after exposing the plating layer; and providing a plating layer in a region where the plating resist layer is formed to form a circuit a step of removing the plating resist layer; and a step of removing the electroless plating layer located in a region other than the region where the circuit is formed by rapid etching or the like.

使用半加成法之本發明之實施形態之印刷配線板之製造方法於另一態樣中包含如下步驟:將本發明之實施形態之電解銅箔與絕緣基板積層之步驟;於電解銅箔及絕緣基板(樹脂基板)設置通孔及/或盲孔之步驟;藉由使用酸等腐蝕溶液之蝕刻或電漿等方法而將電解銅箔全部去除之步驟;對包含通孔及/或盲孔之區域進行除膠渣處理之步驟;對於藉由利用蝕刻等去除電解銅箔而露出之樹脂、以及包含通孔及/或盲孔之區域設置無電解鍍覆層之步驟;於無電解鍍覆層上設置抗鍍覆層之步驟; 對抗鍍覆層進行曝光之後,將供形成電路之區域之抗鍍覆層去除之步驟;於去除了抗鍍覆層之供形成電路之區域設置電鍍層之步驟;去除抗鍍覆層之步驟;及藉由快速蝕刻等而將位於供形成電路之區域以外之區域之無電解鍍覆層去除之步驟。 In another aspect, the method for producing a printed wiring board according to an embodiment of the present invention using a semi-additive method includes the steps of: laminating an electrolytic copper foil according to an embodiment of the present invention and an insulating substrate; and electrolytic copper foil and a step of providing a through hole and/or a blind hole in an insulating substrate (resin substrate); a step of removing all of the electrolytic copper foil by etching or plasma etching using an acid or the like; and including through holes and/or blind holes a step of performing desmear treatment; a step of providing an electroless plating layer on a resin exposed by removing the electrolytic copper foil by etching or the like, and a region including the via hole and/or the blind hole; and electroless plating a step of providing a plating resist layer on the layer; a step of removing the plating resist layer for forming a circuit region after exposing the plating layer; and providing a plating layer in a region where the plating resist layer is formed to form a circuit a step of removing the plating resist layer; and a step of removing the electroless plating layer located in a region other than the region where the circuit is formed by rapid etching or the like.

使用半加成法之本發明之實施形態之印刷配線板之製造方法於另一態樣中包含如下步驟:將本發明之實施形態之電解銅箔與絕緣基板積層之步驟;藉由使用酸等腐蝕溶液之蝕刻或電漿等方法而將電解銅箔全部去除之步驟;對於藉由利用蝕刻去除電解銅箔而露出之樹脂之表面設置無電解鍍覆層之步驟;於無電解鍍覆層上設置抗鍍覆層之步驟;對抗鍍覆層進行曝光之後,將供形成電路之區域之抗鍍覆層去除之步驟;於去除了抗鍍覆層之供形成電路之區域設置電鍍層之步驟;去除抗鍍覆層之步驟;及藉由快速蝕刻等而將位於供形成電路之區域以外之區域之無電解鍍覆層及電解銅箔去除之步驟。 In another aspect of the method for producing a printed wiring board according to an embodiment of the present invention using a semi-additive method, the step of laminating an electrolytic copper foil according to an embodiment of the present invention and an insulating substrate; using acid or the like a step of removing all of the electrolytic copper foil by etching or etching of the etching solution; a step of providing an electroless plating layer on the surface of the resin exposed by removing the electrolytic copper foil by etching; on the electroless plating layer a step of providing a plating resist layer; a step of removing the plating resist layer for forming a region of the circuit after exposing the plating layer; and a step of disposing the plating layer in a region where the plating resist layer is formed for forming the circuit; a step of removing the plating resist layer; and a step of removing the electroless plating layer and the electrolytic copper foil located in a region other than the region where the circuit is formed by rapid etching or the like.

於本說明書中,「改良半加成法」意指如下方法:於絕緣基板上積層電解銅箔,利用抗鍍覆層保護非電路形成部,並藉由電鍍而進行電路形成部之厚銅覆層之後,將抗蝕劑去除,利用(快速)蝕刻將電路形成部以外之電解銅箔去除,藉此,於絕緣基板上形成電路。 In the present specification, the "modified semi-additive method" means a method of laminating an electrolytic copper foil on an insulating substrate, protecting the non-circuit forming portion with a plating resist layer, and performing thick copper plating on the circuit forming portion by electroplating. After the layer, the resist is removed, and the electrolytic copper foil other than the circuit forming portion is removed by (rapid) etching, whereby an electric circuit is formed on the insulating substrate.

因此,使用改良半加成法之本發明之實施形態之印刷配線板之製造方法於一態樣中包含如下步驟: 將本發明之實施形態之電解銅箔與絕緣基板積層之步驟;於電解銅箔及絕緣基板設置通孔及/或盲孔之步驟;對包含通孔及/或盲孔之區域進行除膠渣處理之步驟;對於包含通孔及/或盲孔之區域設置無電解鍍覆層之步驟;於電解銅箔設置抗鍍覆層之步驟;設置抗鍍覆層之後,藉由電鍍而形成電路之步驟;去除抗鍍覆層之步驟;及利用快速蝕刻將藉由去除抗鍍覆層而露出之電解銅箔去除之步驟。 Therefore, the method for producing a printed wiring board according to an embodiment of the present invention using the modified semi-additive method includes the following steps: a step of laminating an electrolytic copper foil according to an embodiment of the present invention and an insulating substrate; a step of providing a through hole and/or a blind hole in the foil and the insulating substrate; a step of removing the slag treatment on the region including the through hole and/or the blind hole; and providing an electroless plating on the region including the through hole and/or the blind hole a step of layering; a step of providing a plating resist layer on the electrolytic copper foil; a step of forming a circuit by electroplating after the plating resist layer is provided; a step of removing the plating resist layer; and removing the plating resist by rapid etching The step of removing the electrolytic copper foil exposed by the coating.

使用改良半加成法之本發明之實施形態之印刷配線板之製造方法於另一態樣中包含如下步驟:將本發明之實施形態之電解銅箔與絕緣基板積層之步驟;於電解銅箔上設置抗鍍覆層之步驟;對抗鍍覆層進行曝光之後,將供形成電路之區域之抗鍍覆層去除之步驟;於去除了抗鍍覆層之供形成電路之區域設置電鍍層之步驟;去除抗鍍覆層之步驟;及藉由快速蝕刻等而將位於供形成電路之區域以外之區域之無電解鍍覆層及電解銅箔去除之步驟。 In another aspect, the method for producing a printed wiring board according to an embodiment of the present invention using the modified semi-additive method includes the steps of: laminating an electrolytic copper foil according to an embodiment of the present invention and an insulating substrate; and electrolytic copper foil a step of providing a plating resist layer; a step of removing the plating resist layer for forming a region after the plating layer is exposed; and a step of providing a plating layer for removing the plating layer from the region for forming the circuit a step of removing the plating resist layer; and a step of removing the electroless plating layer and the electrolytic copper foil located in a region other than the region where the circuit is formed by rapid etching or the like.

於本說明書中,「部分加成法」意指如下方法:於設置導體層而成之基板、視需要穿有通孔或通路孔(via hole)用之孔而成之基板上賦予觸媒核,並進行蝕刻而形成導體電路,視需要設置阻焊劑或抗鍍覆層之後,藉由無電解鍍覆處理而於導體電路上、或通孔、通路孔等進行厚鍍覆,藉此製造印刷配線板。 In the present specification, the "partial addition method" means a method of providing a catalyst core on a substrate formed by providing a conductor layer, a hole formed by a via hole or a via hole as needed. And etching to form a conductor circuit, and if necessary, providing a solder resist or a plating resist layer, and then performing thick plating on a conductor circuit, a via hole, a via hole, or the like by electroless plating treatment, thereby manufacturing printing Wiring board.

因此,使用部分加成法之本發明之實施形態之印刷配線板之製造方法於一態樣中包含如下步驟: 將本發明之實施形態之電解銅箔與絕緣基板積層之步驟;於電解銅箔及絕緣基板設置通孔及/或盲孔之步驟;對包含通孔及/或盲孔之區域進行除膠渣處理之步驟;對包含通孔及/或盲孔之區域賦予觸媒核之步驟;於電解銅箔設置抗蝕刻層之步驟;對抗蝕刻層進行曝光,而形成電路圖案之步驟;藉由使用酸等腐蝕溶液之蝕刻或電漿等方法而將電解銅箔及上述觸媒核去除,而形成電路之步驟;去除抗蝕刻層之步驟;於藉由使用酸等腐蝕溶液之蝕刻或電漿等方法將電解銅箔及觸媒核去除而露出之上述絕緣基板表面設置阻焊劑或抗鍍覆層之步驟;及於未設置阻焊劑或抗鍍覆層之區域設置無電解鍍覆層之步驟。 Therefore, the method for producing a printed wiring board according to the embodiment of the present invention using the partial addition method includes the following steps: a step of laminating an electrolytic copper foil according to an embodiment of the present invention and an insulating substrate; and an electrolytic copper foil And a step of providing a through hole and/or a blind hole in the insulating substrate; a step of performing desmear treatment on the area including the through hole and/or the blind hole; and a step of giving the catalyst core to the area including the through hole and/or the blind hole a step of providing an anti-etching layer on the electrolytic copper foil; a step of exposing the etching layer to form a circuit pattern; removing the electrolytic copper foil and the catalyst core by etching or plasma etching using an acid or the like a step of forming a circuit; a step of removing the anti-etching layer; and providing a solder resist or an anti-etching agent on the surface of the insulating substrate exposed by removing the electrolytic copper foil and the catalyst core by etching or plasma etching using an acid or the like a step of plating a layer; and a step of providing an electroless plating layer in a region where no solder resist or anti-plating layer is provided.

於本說明書中,「減成法」意指如下方法:藉由蝕刻等而將覆銅積層板上之銅箔之不需要部分選擇性地去除,而形成導體圖案。 In the present specification, the "reduction method" means a method of selectively removing unnecessary portions of a copper foil on a copper clad laminate by etching or the like to form a conductor pattern.

因此,使用減成法之本發明之實施形態之印刷配線板之製造方法於一態樣中包含如下步驟:將本發明之實施形態之電解銅箔與絕緣基板積層之步驟;於電解銅箔及絕緣基板設置通孔及/或盲孔之步驟;對包含通孔及/或盲孔之區域進行除膠渣處理之步驟;對於包含通孔及/或盲孔之區域設置無電解鍍覆層之步驟;於無電解鍍覆層之表面設置電鍍層之步驟;於電解鍍覆層及/或電解銅箔之表面設置抗蝕刻層之步驟;對抗蝕刻層進行曝光,而形成電路圖案之步驟;藉由使用酸等腐蝕溶液之蝕刻或電漿等方法而將電解銅箔、無電解鍍覆層 及上述電解鍍覆層去除,而形成電路之步驟;及去除抗蝕刻層之步驟。 Therefore, the method for producing a printed wiring board according to the embodiment of the present invention using the subtractive method includes the following steps: a step of laminating an electrolytic copper foil according to an embodiment of the present invention and an insulating substrate; and an electrolytic copper foil and a step of providing a through hole and/or a blind hole in the insulating substrate; a step of removing the slag treatment on the area including the through hole and/or the blind hole; and providing an electroless plating layer on the area including the through hole and/or the blind hole a step of providing a plating layer on the surface of the electroless plating layer; a step of providing an etching resistant layer on the surface of the electrolytic plating layer and/or the electrolytic copper foil; and a step of exposing the etching layer to form a circuit pattern; The step of forming an electric circuit by removing an electrolytic copper foil, an electroless plating layer, and the above electrolytic plating layer by etching or plasma etching using an etching solution such as an acid; and removing the etching resistant layer.

使用減成法之本發明之實施形態之印刷配線板之製造方法於另一態樣中包含如下步驟:將本發明之實施形態之電解銅箔與絕緣基板積層之步驟;於電解銅箔及絕緣基板設置通孔及/或盲孔之步驟;對包含通孔及/或盲孔之區域進行除膠渣處理之步驟;對於包含通孔及/或盲孔之區域設置無電解鍍覆層之步驟;於無電解鍍覆層之表面形成遮罩之步驟;於未形成有遮罩之無電解鍍覆層之表面設置電鍍層之步驟;於電解鍍覆層及/或電解銅箔之表面設置抗蝕刻層之步驟;對抗蝕刻層進行曝光,而形成電路圖案之步驟;藉由使用酸等腐蝕溶液之蝕刻或電漿等方法而將電解銅箔及無電解鍍覆層去除,而形成電路之步驟;及去除抗蝕刻層之步驟。 In another aspect, the method for producing a printed wiring board according to the embodiment of the present invention using the subtractive method includes the steps of: laminating an electrolytic copper foil according to an embodiment of the present invention and an insulating substrate; and electrolytic copper foil and insulating a step of providing a through hole and/or a blind hole in the substrate; a step of removing the slag treatment on the area including the through hole and/or the blind hole; and an step of providing an electroless plating layer on the area including the through hole and/or the blind hole a step of forming a mask on the surface of the electroless plating layer; a step of providing a plating layer on the surface of the electroless plating layer on which the mask is not formed; and providing an anti-reflection on the surface of the electrolytic plating layer and/or the electrolytic copper foil a step of etching a layer; a step of exposing the etching layer to form a circuit pattern; and removing the electrolytic copper foil and the electroless plating layer by etching or plasma etching using an acid or the like to form a circuit And the step of removing the anti-etching layer.

此外,亦可不進行設置通孔及/或盲孔之步驟、及其後之除膠渣步驟。 Further, the step of providing a through hole and/or a blind hole, and the subsequent desmear step may not be performed.

[實施例] [Examples]

以下,藉由實施例及比較例而對本發明之實施形態詳細地進行說明,但本發明並不受該等限定。 Hereinafter, embodiments of the present invention will be described in detail by way of examples and comparative examples, but the invention is not limited thereto.

1.電解銅箔之製作(實施例1~18、比較例1及2) 1. Production of electrolytic copper foil (Examples 1 to 18, Comparative Examples 1 and 2)

準備鈦製之轉筒(電解轉筒)。其次,於表1中記載之條件下對電解轉筒之表面進行研磨,而製成具有特定之表面粗糙度Sa及均方根高度Sq之電解轉筒。具體而言,利用表1中記載之粒度號數之研磨帶對電解轉筒之表面進行研 磨。此時,於轉筒之寬度方向按特定寬度捲繞研磨帶,同時使研磨帶於轉筒之寬度方向上移動,並使轉筒旋轉,藉此進行研磨。將研磨時之轉筒表面之旋轉速度示於表1中。另外,研磨時間係設為由研磨帶之寬度及研磨帶之移動速度而得之1次道次中通過轉筒表面之1點之時間與道次次數之乘積。此處,研磨帶之1次道次意指自軸方向(電解銅箔之寬度方向)之一端部至另一端部,用研磨帶將轉筒之周方向之表面研磨1次。即,研磨時間以下述式表示。 Prepare a titanium drum (electrolytic drum). Next, the surface of the electrolytic drum was ground under the conditions described in Table 1, and an electrolytic drum having a specific surface roughness Sa and a root mean square height Sq was prepared. Specifically, the surface of the electrolysis drum was ground using the polishing tape of the number of the grain numbers described in Table 1. At this time, the polishing tape is wound at a specific width in the width direction of the drum, and the polishing belt is moved in the width direction of the drum, and the drum is rotated to perform polishing. The rotational speed of the surface of the drum at the time of grinding is shown in Table 1. Further, the polishing time is a product of the time passing through one point of the surface of the drum and the number of passes in one pass obtained by the width of the polishing tape and the moving speed of the polishing tape. Here, the primary pass of the polishing tape means one end portion to the other end portion in the axial direction (the width direction of the electrolytic copper foil), and the surface in the circumferential direction of the rotary cylinder is polished once by the polishing tape. That is, the polishing time is expressed by the following formula.

研磨時間(分鐘)=每1道次之研磨帶之寬度(cm/次)/研磨帶之移動速度(cm/分鐘)×道次次數(次) Grinding time (minutes) = width of grinding belt per pass (cm/time) / moving speed of grinding belt (cm/min) × number of passes (times)

其次,於電解槽中配置上述電解轉筒,並且於電解轉筒之周圍隔開特定之極間距離而配置電極。其次,於電解槽中,於下述條件下進行電解,同時使電解轉筒旋轉,並使銅析出至電解轉筒之表面直至其成為表2中記載之厚度。 Next, the electrolysis drum is placed in an electrolytic cell, and electrodes are disposed around the electrolysis drum with a specific interelectrode distance therebetween. Next, electrolysis was carried out in an electrolytic cell under the following conditions, and the electrolysis drum was rotated to deposit copper on the surface of the electrolysis drum until it became the thickness described in Table 2.

<電解條件> <Electrolysis conditions>

電解液組成:100g/L之Cu、100g/L之H2SO4 Composition of electrolyte: 100g/L of Cu, 100g/L of H 2 SO 4

電流密度:90A/dm2 Current density: 90A/dm 2

電解液流速:2.0m/秒 Electrolyte flow rate: 2.0m / sec

電解液溫度:60℃ Electrolyte temperature: 60 ° C

添加物:60質量ppm之氯離子、動物膠(於實施例1、2、5、6及10~12、以及比較例1中,設為0.02ppm,於實施例3、4、7~9及13~18中,設為4.5ppm)。 Additive: 60 ppm by mass of chloride ion, animal glue (in Examples 1, 2, 5, 6 and 10 to 12, and Comparative Example 1, set to 0.02 ppm, in Examples 3, 4, 7 to 9 and In 13~18, it is set to 4.5ppm).

於比較例2中,於下述條件下進行電解,使銅析出至電解轉筒之表面直至其成為表2中記載之厚度。 In Comparative Example 2, electrolysis was carried out under the following conditions to deposit copper on the surface of the electrolysis drum until it became the thickness described in Table 2.

<電解條件> <Electrolysis conditions>

電解液組成:50~150g/L之Cu、60~150g/L之H2SO4 Electrolyte composition: 50~150g/L Cu, 60~150g/L H 2 SO 4

電流密度:10~80A/dm2 Current density: 10~80A/dm 2

電解液流速:1.5~5m/秒 Electrolyte flow rate: 1.5~5m/sec

電解液溫度:50~60℃ Electrolyte temperature: 50~60°C

添加物:10~100質量ppm之氯離子、10~100質量ppm之雙(3-磺丙基)二硫醚、10~100質量ppm之三級胺化合物。 Additive: 10 to 100 ppm by mass of chloride ion, 10 to 100 ppm by mass of bis(3-sulfopropyl) disulfide, and 10 to 100 ppm by mass of a tertiary amine compound.

此外,使用以下之化合物作為上述三級胺化合物。 Further, the following compounds were used as the above tertiary amine compound.

於上述化學式中,R1及R2同為甲基。此外,上述三級胺化合物例如可藉由將長瀨化成股份有限公司製造之Denacol Ex-314及二甲基胺混合特定量,並於60℃使其反應3小時而獲得。 In the above chemical formula, R 1 and R 2 are both a methyl group. Further, the above tertiary amine compound can be obtained, for example, by mixing a certain amount of Denacol Ex-314 and dimethylamine manufactured by Nagase Co., Ltd., and reacting at 60 ° C for 3 hours.

其次,將析出至旋轉之電解轉筒之表面之銅剝取,而連續地製造電解銅箔。 Next, the copper which was deposited on the surface of the rotating electrolytic drum was peeled off, and the electrolytic copper foil was continuously produced.

關於實施例1~4及10以及比較例1及2,對以上述方式製作之電解銅箔(生箔)之電解轉筒側之表面(光澤面)依序實施以下之(1)~(4)所示之處理。另外,關於實施例1及2以及比較例1及2,對以上述方式製作之電解銅箔(生箔)之與電解轉筒側相反之表面(析出面)依序實施以下之(2)~(4)所示之處理。另外,關於實施例10,對以上述方式製作之電解銅箔(生箔)之與電解轉筒側相反之表面(析出面)依序實施以下之(1)~(4)所示之處理。另外,關於實施例3,對以上述方式製作之電解銅箔(生箔)之與電解轉筒側相反之表面(析出面)實施以下之(3)所示之處理。另外,關於實施例4,對以上述方式製作之電解銅箔(生箔)之與電解轉筒側相反之表面(析出面)實施以下之(4)所示之處理。 With respect to Examples 1 to 4 and 10 and Comparative Examples 1 and 2, the following (1) to (4) were sequentially applied to the surface (glossy surface) on the side of the electrolytic drum of the electrolytic copper foil (raw foil) produced as described above. ) The processing shown. Further, in Examples 1 and 2 and Comparative Examples 1 and 2, the surface (precipitation surface) opposite to the electrolysis drum side of the electrolytic copper foil (raw foil) produced as described above was sequentially subjected to the following (2)~ (4) The processing shown. In addition, in the example 10, the surface (precipitation surface) opposite to the electrolysis drum side of the electrolytic copper foil (raw foil) produced as described above was sequentially subjected to the treatments shown in the following (1) to (4). In addition, in the third embodiment, the surface (precipitation surface) opposite to the electrolysis drum side of the electrolytic copper foil (raw foil) produced as described above was subjected to the treatment shown in the following (3). In addition, in the fourth embodiment, the surface (precipitation surface) opposite to the electrolysis drum side of the electrolytic copper foil (raw foil) produced as described above was subjected to the treatment shown in the following (4).

(1)粗化處理 (1) roughening treatment

使用由Cu、H2SO4、As及W所構成之以下記載之銅粗化鍍浴,使粗化粒子電沈積至表面。 The roughened particles are electrodeposited to the surface using a copper roughening plating bath described below composed of Cu, H 2 SO 4 , As, and W.

(液體組成1) (liquid composition 1)

CuSO4‧5H2O:120g/L CuSO 4 ‧5H 2 O: 120g/L

H2SO4:120g/L H 2 SO 4 : 120g/L

Na2WO4‧2H2O:20mg/L Na 2 WO 4 ‧2H 2 O: 20 mg/L

十二烷基硫酸鈉:30mg Sodium lauryl sulfate: 30mg

As:1mg/L As: 1mg/L

(電鍍條件1) (plating condition 1)

溫度:40℃ Temperature: 40 ° C

(電流條件1) (current condition 1)

電流密度:70A/dm2 Current density: 70A/dm 2

鍍覆時間:2秒 Plating time: 2 seconds

(液體組成2) (liquid composition 2)

CuSO4‧5H2O:240g/L CuSO 4 ‧5H 2 O: 240g/L

H2SO4:120g/L H 2 SO 4 : 120g/L

(電鍍條件2) (plating condition 2)

溫度:55℃ Temperature: 55 ° C

(電流條件2) (current condition 2)

電流密度:20A/dm2 Current density: 20A/dm 2

鍍覆時間:7秒 Plating time: 7 seconds

(2)障壁處理(耐熱處理) (2) Barrier treatment (heat treatment)

進行鎳鋅合金鍍覆。 Nickel-zinc alloy plating is performed.

(液體組成) (liquid composition)

Ni:13g/L Ni: 13g/L

Zn:5g/L Zn: 5g/L

pH:2 pH: 2

(電鍍條件) (plating conditions)

溫度:40℃ Temperature: 40 ° C

電流密度:8A/dm2 Current density: 8A/dm 2

(3)鉻酸鹽處理 (3) chromate treatment

進行鉻酸鋅處理。 Treatment with zinc chromate.

(液體組成) (liquid composition)

CrO3:2.5g/L CrO 3 : 2.5g / L

Zn:0.7g/L Zn: 0.7g/L

Na2SO4:10g/L Na 2 SO 4 : 10g/L

pH:4.8 pH: 4.8

(鉻酸鋅條件) (zinc chromate condition)

溫度:54℃ Temperature: 54 ° C

電流密度:0.7A/dm2 Current density: 0.7A/dm 2

(4)矽烷偶合處理 (4) decane coupling treatment

(液體組成) (liquid composition)

四乙氧基矽烷含量:0.4vol% Tetraethoxydecane content: 0.4 vol%

pH:7.5 pH: 7.5

塗佈方法:溶液之噴霧 Coating method: spray of solution

關於實施例5~8及14~18,對以上述方式製作之電解銅箔(生箔)之電解轉筒側之表面(光澤面)依序實施以下之(1)~(5)所示之處理。另外,關於實施例5~8及15~18,對以上述方式製作之電解銅箔(生箔)之與電解轉筒側相反之表面(析出面)依序實施以下之(2)~(5)所示之處理。另外,關於實施例14,對以上述方式製作之電解銅箔(生箔)之與電解轉筒側相反之表面(析出面)依序實施以下之(4)及(5)所示之處理。 In the examples 5 to 8 and 14 to 18, the surface (glossy surface) on the side of the electrolysis cylinder of the electrolytic copper foil (raw foil) produced as described above was sequentially subjected to the following (1) to (5). deal with. In addition, in the examples 5 to 8 and 15 to 18, the surface (precipitation surface) opposite to the electrolysis drum side of the electrolytic copper foil (raw foil) produced as described above was sequentially subjected to the following (2) to (5). ) The processing shown. Further, in Example 14, the surface (precipitation surface) opposite to the electrolysis drum side of the electrolytic copper foil (raw foil) produced in the above manner was subjected to the treatments shown in the following (4) and (5) in order.

(1)粗化處理 (1) roughening treatment

為了使3元系銅-鈷-鎳合金鍍覆之粗化粒子電沈積至表面,於以下之鍍浴及鍍覆條件下進行粗化處理。 In order to electrodeposit the roughened particles of the ternary copper-cobalt-nickel alloy plating to the surface, the roughening treatment was carried out under the following plating bath and plating conditions.

鍍浴組成:16g/L之Cu、10g/L之Co、10g/L之Ni Plating bath composition: 16g/L of Cu, 10g/L of Co, 10g/L of Ni

pH:1~4 pH: 1~4

溫度:30℃ Temperature: 30 ° C

電流密度:30A/dm2 Current density: 30A/dm 2

鍍覆時間:2秒 Plating time: 2 seconds

(2)耐熱處理 (2) Heat treatment

進行Co-Ni合金鍍覆。將Co-Ni合金鍍覆條件記載於下文。 Co-Ni alloy plating was performed. The Co-Ni alloy plating conditions are described below.

(電解液組成) (electrolyte composition)

Co:10g/L Co: 10g/L

Ni:20g/L Ni: 20g/L

pH:1.0~3.5 pH: 1.0~3.5

(電解液溫度) (electrolyte temperature)

35℃ 35°C

(電流條件) (current condition)

電流密度:10A/dm2 Current density: 10A/dm 2

鍍覆時間:1秒 Plating time: 1 second

(3)防銹處理 (3) Anti-rust treatment

進行鋅-鎳合金鍍覆。 Zinc-nickel alloy plating is performed.

(液體組成) (liquid composition)

Ni:15g/L Ni: 15g/L

Zn:50g/L Zn: 50g/L

pH:3~4 pH: 3~4

(電鍍條件) (plating conditions)

溫度:50℃ Temperature: 50 ° C

電流密度:0.3A/dm2 Current density: 0.3A/dm 2

鍍覆時間:實施例5及8為2.43秒,實施例6為2.61秒,實施例7為2.32秒,實施例14~18為0.5~5秒 Plating time: Examples 5 and 8 are 2.43 seconds, Example 6 is 2.61 seconds, Example 7 is 2.32 seconds, and Examples 14 to 18 are 0.5 to 5 seconds.

(4)鉻酸鹽處理 (4) chromate treatment

進行鉻酸鋅處理。 Treatment with zinc chromate.

(液體組成) (liquid composition)

CrO3:2.5g/L CrO 3 : 2.5g / L

Zn:0.7g/L Zn: 0.7g/L

Na2SO4:10g/L Na 2 SO 4 : 10g/L

pH:4.8 pH: 4.8

(鉻酸鋅條件) (zinc chromate condition)

溫度:54℃ Temperature: 54 ° C

電流密度:0.7A/dm2 Current density: 0.7A/dm 2

(5)矽烷偶合處理 (5) decane coupling treatment

(液體組成) (liquid composition)

N-(2-胺基乙基)-3-胺基丙基三甲氧基矽烷含量:0.4vol% N-(2-Aminoethyl)-3-aminopropyltrimethoxydecane content: 0.4 vol%

pH:7.5 pH: 7.5

塗佈方法:溶液之噴霧 Coating method: spray of solution

關於實施例9,對以上述方式製作之電解銅箔(生箔)之電解轉筒側之表面(光澤面)及與電解轉筒側相反之表面(析出面)依序實施以下之(1)~(3)所示之處理。 In the ninth embodiment, the surface (gloss surface) on the electrorotation drum side and the surface (precipitation surface) opposite to the electrolysis drum side of the electrolytic copper foil (raw foil) produced in the above manner were sequentially subjected to the following (1). ~(3) shows the processing.

(1)障壁處理(耐熱處理) (1) Barrier treatment (heat treatment)

進行鎳-鋅合金鍍覆。 Nickel-zinc alloy plating is performed.

(液體組成) (liquid composition)

Ni:13g/L Ni: 13g/L

Zn:5g/L Zn: 5g/L

pH:2 pH: 2

(電鍍條件) (plating conditions)

溫度:40℃ Temperature: 40 ° C

電流密度:8A/dm2 Current density: 8A/dm 2

(2)鉻酸鹽處理 (2) chromate treatment

進行鉻酸鋅處理。 Treatment with zinc chromate.

(液體組成) (liquid composition)

CrO3:2.5g/L CrO 3 : 2.5g / L

Zn:0.7g/L Zn: 0.7g/L

Na2SO4:10g/L Na 2 SO 4 : 10g/L

pH:4.8 pH: 4.8

(鉻酸鋅條件) (zinc chromate condition)

溫度:54℃ Temperature: 54 ° C

電流密度:0.7A/dm2 Current density: 0.7A/dm 2

(3)矽烷偶合處理 (3) decane coupling treatment

(液體組成) (liquid composition)

四乙氧基矽烷含量:0.4vol% Tetraethoxydecane content: 0.4 vol%

pH:7.5 pH: 7.5

塗佈方法:溶液之噴霧 Coating method: spray of solution

上述處理之後,進而於下述條件下於表面處理層之表面形成樹脂層。 After the above treatment, a resin layer was formed on the surface of the surface treatment layer under the following conditions.

(樹脂合成例) (Resin Synthesis Example)

於附不鏽鋼製之錨式攪拌棒、氮氣導入管及活栓之閘上安裝具備球形冷凝管之回流冷卻器而成之2升之三頸瓶中添加3,4,3',4'-聯苯四羧酸二酐117.68g(400mmol)、1,3-雙(3-胺基苯氧基)苯87.7g(300mmol)、γ-戊內酯4.0g(40mmol)、吡啶4.8g(60mmol)、N-甲基-2-吡咯啶酮(以下,記為NMP)300g、及甲苯20g,以180℃加熱1小時並冷卻至室溫附近之後,添加3,4,3',4'-聯苯四羧酸二酐29.42g(100mmol)、2,2-雙{4-(4-胺基苯氧基)苯基}丙烷82.12g(200mmol)、NMP 200g、及甲苯40g,於室溫下混合1小時之後,以180℃加熱3小時,而獲得固形物成分為38%之嵌段共聚聚醯亞胺。關於該嵌段共聚聚醯亞胺,為下述所示之通式(1):通式(2)=3:2,數量平均分子量:70000,重量平均分子量:150000。 Add 3,4,3',4'-biphenyl to a 2-liter three-necked flask equipped with a stainless steel anchor stir bar, a nitrogen inlet pipe and a stopcock. 117.68 g (400 mmol) of tetracarboxylic dianhydride, 87.7 g (300 mmol) of 1,3-bis(3-aminophenoxy)benzene, 4.0 g (40 mmol) of γ-valerolactone, and 4.8 g (60 mmol) of pyridine. 300 g of N-methyl-2-pyrrolidone (hereinafter referred to as NMP) and 20 g of toluene were heated at 180 ° C for 1 hour and cooled to near room temperature, and then added 3,4,3',4'-biphenyl. 49.42g (100mmol) of tetracarboxylic dianhydride, 82.12g (200mmol) of 2,2-bis{4-(4-aminophenoxy)phenyl}propane, 200g of NMP, and 40g of toluene, mixed at room temperature After 1 hour, it was heated at 180 ° C for 3 hours to obtain a block copolymerized polyimine having a solid content of 38%. The block copolymerized polyimine is represented by the following formula (1): general formula (2) = 3:2, number average molecular weight: 70,000, and weight average molecular weight: 150,000.

利用NMP將合成例中所獲得之嵌段共聚聚醯亞胺溶液進一步稀釋,而製成固形物成分10%之嵌段共聚聚醯亞胺溶液。於該嵌段共聚聚醯亞胺溶液中,將雙(4-順丁烯二醯亞胺苯基)甲烷(BMI-H,K-I化成)之固形物成分重量比率設為35,將嵌段共聚聚醯亞胺之固形物成分重量比率設為65(即,樹脂溶液中包含之雙(4-順丁烯二醯亞胺苯基)甲烷之固形物成分重量:樹脂溶液 中包含之嵌段共聚聚醯亞胺之固形物成分重量=35:65),以60℃溶解混合20分鐘而製成樹脂溶液。其後,使用逆輥塗佈機將樹脂溶液塗佈於電解銅箔之表面處理層之表面,在氮氣環境下,以120℃、3分鐘以160℃、3分鐘進行乾燥處理之後,最後以300℃進行2分鐘之加熱處理,而製作具備樹脂層之電解銅箔。此外,樹脂層之厚度設為2μm。 The block copolymerized polyimine solution obtained in the synthesis example was further diluted with NMP to prepare a block copolymerized polyimine solution having a solid content of 10%. In the block copolymerized polyimine solution, the weight ratio of the solid component of bis(4-maleoximeiminophenyl)methane (BMI-H, KI formation) was set to 35, and the block copolymerization was carried out. The weight ratio of the solid content of the polyimine is set to 65 (that is, the weight of the solid component of the bis(4-methyleneiminephenyl)methane contained in the resin solution: the block copolymer contained in the resin solution The weight fraction of the solid content of the polyimine was 35:65), and the mixture was dissolved and mixed at 60 ° C for 20 minutes to prepare a resin solution. Thereafter, the resin solution was applied onto the surface of the surface treated layer of the electrolytic copper foil using a reverse roll coater, and dried at 120 ° C for 3 minutes at 160 ° C for 3 minutes in a nitrogen atmosphere, and finally 300. The electrolytic treatment was carried out for 2 minutes at ° C to prepare an electrolytic copper foil having a resin layer. Further, the thickness of the resin layer was set to 2 μm.

關於實施例11~13,對以上述方式製作之電解銅箔(生箔)之電解轉筒側之表面(光澤面)進行以下之(1)所示之粗化處理之後,依序實施與實施例5~8及14同樣之(2)~(5)之處理。另外,關於實施例11~13,對以上述方式製作之電解銅箔(生箔)之與電解轉筒側相反之表面(光澤面)依序實施與實施例5~8之(2)~(5)同樣之處理。 In the examples 11 to 13, the surface (glossy surface) on the side of the electrolysis drum of the electrolytic copper foil (raw foil) produced as described above was subjected to the roughening treatment shown in the following (1), and then sequentially carried out and carried out. Cases 5 to 8 and 14 are treated similarly to (2) to (5). Further, in Examples 11 to 13, the surface (glossy surface) of the electrolytic copper foil (raw foil) produced in the above manner opposite to the electrolytic drum side was sequentially carried out in the same manner as in Examples 5 to 8 (2) to (2) 5) The same process.

(1)粗化處理 (1) roughening treatment

為了使3元系銅-鈷-鎳合金鍍覆之粗化粒子電沈積至表面,於以下之鍍浴及鍍覆條件下進行粗化處理。 In order to electrodeposit the roughened particles of the ternary copper-cobalt-nickel alloy plating to the surface, the roughening treatment was carried out under the following plating bath and plating conditions.

鍍浴組成:10~20g/L之Cu、1~10g/L之Co、1~10g/L之Ni Plating bath composition: 10~20g/L of Cu, 1~10g/L of Co, 1~10g/L of Ni

pH:1~4 pH: 1~4

溫度:30~50℃ Temperature: 30~50°C

電流密度:30~45A/dm2 Current density: 30~45A/dm 2

鍍覆時間:0.1~1.5秒 Plating time: 0.1~1.5 seconds

2.電解銅箔之評價 2. Evaluation of electrolytic copper foil

<光澤面及光澤面側之表面粗糙度Sa及均方根高度Sq> <The surface roughness Sa and the root mean square height Sq of the glossy side and the glossy side

光澤面及光澤面側之表面粗糙度Sa及均方根高度Sq係針對進行粗化處理及/或表面處理之前後之電解銅箔之光澤面,依據ISO-25178-2:2012,使用Olympus公司製造之雷射顯微鏡OLS4100(LEXT OLS 4100)進行測定。此時,關於雷射顯微鏡,使用物鏡50倍進行3處之200μm×1000μm面積(具體而 言,為200000μm2)之測定,而算出表面粗糙度Sa及均方根高度Sq。分別將3處所獲得之表面粗糙度Sa及均方根高度Sq之算術平均值作為表面粗糙度Sa及均方根高度Sq之值。此外,於雷射顯微鏡測定中,於測定結果之測定面並非平面之情形時(成為曲面之情形),進行平面修正,其後算出表面粗糙度Sa及均方根高度Sq。另外,利用雷射顯微鏡測定表面粗糙度Sa時之環境溫度係設為23~25℃。 The surface roughness Sa and the root mean square height Sq on the shiny side and the glossy side are the shiny side of the electrolytic copper foil before and after the roughening treatment and/or the surface treatment, according to ISO-25178-2:2012, using Olympus Corporation The manufactured laser microscope OLS4100 (LEXT OLS 4100) was measured. At this time, with respect to the laser microscope, the measurement of the area of 200 μm × 1000 μm (specifically, 200,000 μm 2 ) of three places using 50 times of the objective lens was performed, and the surface roughness Sa and the root mean square height Sq were calculated. The arithmetic mean of the surface roughness Sa and the root mean square height Sq obtained at three places is taken as the value of the surface roughness Sa and the root mean square height Sq. Further, in the laser microscope measurement, when the measurement surface of the measurement result is not a flat surface (in the case of a curved surface), plane correction is performed, and then the surface roughness Sa and the root mean square height Sq are calculated. Further, the ambient temperature at which the surface roughness Sa was measured by a laser microscope was set to 23 to 25 °C.

<析出面側之表面粗糙度Sa、均方根高度Sq、最大峰高度Sp、最大谷深度Sv、最大高度Sz、峰度Sku及偏斜度Ssk> <surface roughness Sa, root mean square height Sq, maximum peak height Sp, maximum valley depth Sv, maximum height Sz, kurtosis Sku, and skewness Ssk> on the deposition surface side

析出面側之表面粗糙度Sa、均方根高度Sq、最大峰高度Sp、最大谷深度Sv、峰度Sku及偏斜度Ssk係針對進行粗化處理及/或表面處理後之電解銅箔之析出面,依據ISO-25178-2:2012,使用Olympus公司製造之雷射顯微鏡OLS4100(LEXT OLS 4100)進行測定。此時之測定條件設為與光澤面及光澤面側之表面粗糙度Sa及均方根高度Sq之測定條件相同。 The surface roughness Sa, the root mean square height Sq, the maximum peak height Sp, the maximum valley depth Sv, the kurtosis Sku, and the skewness Ssk on the deposition surface side are for the electrolytic copper foil after the roughening treatment and/or the surface treatment. The precipitate was measured according to ISO-25178-2:2012 using a laser microscope OLS4100 (LEXT OLS 4100) manufactured by Olympus. The measurement conditions at this time are the same as the measurement conditions of the surface roughness Sa and the root mean square height Sq on the shiny side and the shiny side.

<常溫抗拉強度、高溫抗拉強度> <Normal temperature tensile strength, high temperature tensile strength>

對於進行粗化處理及/或表面處理後之電解銅箔,依據IPC-TM-650對常溫抗拉強度及高溫抗拉強度進行測定。 For the electrolytic copper foil subjected to the roughening treatment and/or the surface treatment, the tensile strength at room temperature and the tensile strength at high temperature were measured in accordance with IPC-TM-650.

<常溫伸長率、高溫伸長率> <normal temperature elongation, high temperature elongation>

對於進行粗化處理及/或表面處理後之電解銅箔,依據IPC-TM-650對常溫伸長率及高溫伸長率進行測定。此外,如上所述,「高溫抗拉強度」意指於180℃之抗拉強度。另外,「高溫伸長率」意指於180℃之伸長率。 For the electrolytic copper foil subjected to the roughening treatment and/or the surface treatment, the room temperature elongation and the high temperature elongation were measured in accordance with IPC-TM-650. Further, as described above, "high temperature tensile strength" means a tensile strength at 180 °C. In addition, "high temperature elongation" means an elongation at 180 °C.

<電路形成性> <circuit formation>

藉由熱壓接而使進行粗化處理及/或表面處理後之電解銅箔分別自光澤面側貼合於雙順丁烯二醯亞胺三樹脂預浸體。其後,對貼合於預浸體之電解銅箔自析出面側進行蝕刻直至其厚度成為9μm。然後,於進行蝕刻之後之電解銅箔 之表面設置抗蝕刻層,進行曝光及顯影而形成抗蝕圖案。其後,利用氯化鐵進行蝕刻,以L/S=25μm/25μm、L/S=22μm/22μm、L/S=20μm/20μm、及L/S=15μm/15μm分別形成20根長度1mm之配線。繼而,測定自電路上表面觀察到之電路下端寬度之最大值與最小值之差(μm),將測定5處所得之平均值作為結果。若最大值與最小值之差為2μm以下,則判斷為具有良好之電路直線性,並設為◎。另外,將最大值與最小值之差超過2μm且為4μm以下時設為○。另外,將最大值與最小值之差超過4μm時設為×。 The electrolytic copper foil subjected to the roughening treatment and/or the surface treatment is bonded to the bis-m-butylene diimide three from the gloss side by thermocompression bonding Resin prepreg. Thereafter, the electrodeposited copper foil bonded to the prepreg was etched from the side of the deposition surface until the thickness thereof was 9 μm. Then, an anti-etching layer is provided on the surface of the electrolytic copper foil after the etching, and exposure and development are performed to form a resist pattern. Thereafter, etching was performed using ferric chloride, and 20 lengths of 1 mm were formed by L/S=25 μm/25 μm, L/S=22 μm/22 μm, L/S=20 μm/20 μm, and L/S=15 μm/15 μm, respectively. Wiring. Then, the difference (μm) between the maximum value and the minimum value of the width of the lower end of the circuit observed from the upper surface of the circuit was measured, and the average value obtained at 5 points was measured as a result. When the difference between the maximum value and the minimum value is 2 μm or less, it is judged that the circuit has good linearity and is set to ◎. In addition, when the difference between the maximum value and the minimum value is more than 2 μm and is 4 μm or less, it is set to ○. Further, when the difference between the maximum value and the minimum value exceeds 4 μm, it is set to ×.

<阻焊劑之密接性> <Adhesiveness of solder resist>

阻焊劑之密接性係以如下方式進行。首先,於進行表面處理後之電解銅箔之析出面側塗佈阻焊劑(太陽油墨製造股份有限公司製造,商品名「PSR-4000AUS308」),其後依序進行乾燥(80℃×30分鐘)、後硬化(150℃×60分鐘)及後UV(高壓水銀燈,1000mJ/cm2),而形成20~30μm厚之阻焊劑之樹脂層(塗膜),藉此製作試片。其次,使該試片漂浮於260℃之焊料槽20秒鐘之後,將其自焊料層取出,並對電解銅箔與阻焊劑之界面處之膨脹(電解銅箔與阻焊劑之剝離)進行觀察。於該評價中,將電解銅箔之5%以上之面積中存在由膨脹所導致之界面變色者設為×(不合格),將電解銅箔之2%以上且未達5%之面積中存在由膨脹所導致之界面變色者設為○,將完全未產生由膨脹所導致之界面變色、或者電解銅箔之未達2%之面積中存在由膨脹所導致之界面變色者設為◎,而進行評價。 The adhesion of the solder resist is performed in the following manner. First, a solder resist (manufactured by Sun Ink Manufacturing Co., Ltd., trade name "PSR-4000AUS308") was applied to the deposition surface side of the electrolytic copper foil after the surface treatment, and then dried sequentially (80 ° C × 30 minutes). After the curing (150 ° C × 60 minutes) and the rear UV (high pressure mercury lamp, 1000 mJ / cm 2 ), a resin layer (coating film) of a solder resist of 20 to 30 μm thick was formed, thereby preparing a test piece. Next, after the test piece was floated in a solder bath at 260 ° C for 20 seconds, it was taken out from the solder layer, and the expansion at the interface between the electrolytic copper foil and the solder resist (peeling of the electrolytic copper foil and the solder resist) was observed. . In this evaluation, in the area of 5% or more of the electrolytic copper foil, the interface discoloration caused by the expansion is set to × (failed), and the area of the electrolytic copper foil of 2% or more and less than 5% exists. The discoloration of the interface caused by the expansion is ○, and the interface discoloration caused by the expansion is not caused at all, or the interface discoloration due to the expansion in the area of less than 2% of the electrolytic copper foil is set to ◎. Conduct an evaluation.

將試驗條件及試驗結果示於表2及3中。另外,圖1(a)係形成粗化處理層及表面處理層前之實施例2之電解銅箔的光澤面之SEM圖像。圖1(b)係形成粗化處理層及表面處理層前之實施例10之電解銅箔的光澤面之SEM圖像。 The test conditions and test results are shown in Tables 2 and 3. Further, Fig. 1(a) is an SEM image of the shiny side of the electrolytic copper foil of Example 2 before the roughening treatment layer and the surface treatment layer were formed. Fig. 1(b) is an SEM image of the shiny side of the electrolytic copper foil of Example 10 before the roughening treatment layer and the surface treatment layer were formed.

<評價結果> <evaluation result>

關於在光澤面側不具有粗化處理層之實施例9之電解銅箔,光澤面側之表面粗糙度Sa為0.270μm以下及均方根高度Sq為0.315μm以下,關於析出面側,表面粗糙度Sa為0.115μm以上,均方根高度Sq為0.120μm以上,最大峰高度Sp為0.900μm以上,最大谷深度Sv為0.600μm以上,最大高度Sz為1.500μm以上,峰度Sku為2.75以上且4.00以下,偏斜度Ssk為0.00以上且0.35以下。並且,該電解銅箔之電路形成性及阻焊劑之密接性良好。另外,該電解銅箔之常溫抗拉強度、高溫抗拉強度、常溫伸長率及高溫伸長率之結果亦良好。 The electrodeposited copper foil of Example 9 which does not have a roughened layer on the shiny side, has a surface roughness Sa of 0.270 μm or less and a root mean square height Sq of 0.315 μm or less on the gloss surface side, and the surface roughness on the deposition surface side. The degree Sa is 0.115 μm or more, the root mean square height Sq is 0.120 μm or more, the maximum peak height Sp is 0.900 μm or more, the maximum valley depth Sv is 0.600 μm or more, the maximum height Sz is 1.500 μm or more, and the kurtosis Sku is 2.75 or more. 4.00 or less, the skewness Ssk is 0.00 or more and 0.35 or less. Further, the electrodepositive properties of the electrodeposited copper foil and the solder resist are good. Further, the electrolytic copper foil was also excellent in normal temperature tensile strength, high temperature tensile strength, normal temperature elongation, and high temperature elongation.

另外,關於在光澤面側具有粗化處理層之實施例1~8及10~14之電解銅 箔,光澤面側之表面粗糙度Sa為0.470μm以下及均方根高度Sq為0.550μm以下,關於析出面側,表面粗糙度Sa為0.115μm以上,均方根高度Sq為0.120μm以上,最大峰高度Sp為0.900μm以上,最大谷深度Sv為0.600μm以上,最大高度Sz為1.500μm以上,峰度Sku為2.75以上且4.00以下,偏斜度Ssk為0.00以上且0.35以下。並且,該電解銅箔之電路形成性及阻焊劑之密接性良好。另外,該電解銅箔之常溫抗拉強度、高溫抗拉強度、常溫伸長率及高溫伸長率之結果亦良好。 In addition, the electrodeposited copper foils of Examples 1 to 8 and 10 to 14 having a roughened layer on the shiny side have a surface roughness Sa of 0.470 μm or less and a root mean square height Sq of 0.550 μm or less. The surface roughness Sa is 0.115 μm or more, the root mean square height Sq is 0.120 μm or more, the maximum peak height Sp is 0.900 μm or more, the maximum valley depth Sv is 0.600 μm or more, and the maximum height Sz is 1.500 μm or more. The kurtosis Sku is 2.75 or more and 4.00 or less, and the skewness Ssk is 0.00 or more and 0.35 or less. Further, the electrodepositive properties of the electrodeposited copper foil and the solder resist are good. Further, the electrolytic copper foil was also excellent in normal temperature tensile strength, high temperature tensile strength, normal temperature elongation, and high temperature elongation.

與此相對,關於在光澤面側具有粗化處理層之比較例1之電解銅箔,光澤面側之表面粗糙度Sa超過0.470μm,並且均方根高度Sq亦超過0.550μm。因此,該電解銅箔之電路形成性不充分。 On the other hand, in the electrolytic copper foil of Comparative Example 1 having the roughened layer on the glossy side, the surface roughness Sa on the glossy side was more than 0.470 μm, and the root mean square height Sq was also more than 0.550 μm. Therefore, the circuit formation property of this electrolytic copper foil is inadequate.

另外,關於在光澤面側具有粗化處理層之比較例2之電解銅箔之析出面側,表面粗糙度Sa未達0.115μm,均方根高度Sq未達0.120μm,最大峰高度Sp未達0.900μm,最大谷深度Sv未達0.600μm,最大高度Sz未達1.500μm,峰度Sku為2.75以上且4.00以下之範圍外,偏斜度Ssk為0.00以上且0.35以下之範圍外。因此,該電解銅箔之阻焊劑之密接性不充分。 In addition, the surface roughness Sa of the electrodeposited copper foil of Comparative Example 2 having a roughened layer on the shiny side was less than 0.115 μm, the root mean square height Sq was less than 0.120 μm, and the maximum peak height Sp was not reached. 0.900 μm, the maximum valley depth Sv is less than 0.600 μm, the maximum height Sz is less than 1.500 μm, and the kurtosis Sku is outside the range of 2.75 or more and 4.00 or less, and the skewness Ssk is outside the range of 0.00 or more and 0.35 or less. Therefore, the adhesion of the solder resist of the electrolytic copper foil is insufficient.

由以上之結果可知,根據本發明之實施形態,可提供一種電路形成性及阻焊劑之密接性優異之電解銅箔。另外,根據本發明之實施形態,可提供一種使用電路形成性及阻焊劑之密接性優異之電解銅箔之覆銅積層板、印刷配線板及其製造方法、以及電子機器及其製造方法。 From the above results, according to the embodiment of the present invention, it is possible to provide an electrolytic copper foil excellent in circuit formability and adhesion of a solder resist. Further, according to the embodiment of the present invention, it is possible to provide a copper-clad laminate having an electrolytic copper foil excellent in circuit formability and solder resist adhesion, a printed wiring board, a method for producing the same, and an electronic device and a method for producing the same.

Claims (39)

一種電解銅箔,其具有光澤面及析出面,且於上述光澤面側具有粗化處理層,上述光澤面之均方根高度Sq為0.550μm以下,上述析出面側滿足下述條件中之至少一者:(a)表面粗糙度Sa為0.115μm以上(b)均方根高度Sq為0.120μm以上(c)最大峰高度Sp為0.900μm以上(d)最大谷深度Sv為0.600μm以上(e)最大高度Sz為1.500μm以上(f)峰度Sku為2.75以上且4.00以下(g)偏斜度Ssk為0.00以上且0.35以下。  An electrolytic copper foil having a shiny surface and a precipitation surface, and having a roughened layer on the glossy surface side, wherein the root surface height Sq of the shiny surface is 0.550 μm or less, and the deposition surface side satisfies at least the following conditions One: (a) the surface roughness Sa is 0.115 μm or more, (b) the root mean square height Sq is 0.120 μm or more, (c) the maximum peak height Sp is 0.900 μm or more, and (d) the maximum valley depth Sv is 0.600 μm or more (e). The maximum height Sz is 1.500 μm or more. (f) The kurtosis Sku is 2.75 or more and 4.00 or less (g) The skewness Ssk is 0.00 or more and 0.35 or less.   如請求項1所述之電解銅箔,其中,上述析出面側滿足下述條件中之至少一者:(a)表面粗糙度Sa為0.120μm以上(b)均方根高度Sq為0.130μm以上(c)最大峰高度Sp為1.050μm以上(d)最大谷深度Sv為0.740μm以上(e)最大高度Sz為1.800μm以上(f)峰度Sku為2.80以上且4.00以下(g)偏斜度Ssk為0.00以上且0.26以下。  The electrodeposited copper foil according to claim 1, wherein the deposition surface side satisfies at least one of the following conditions: (a) the surface roughness Sa is 0.120 μm or more, and (b) the root mean square height Sq is 0.130 μm or more. (c) maximum peak height Sp is 1.050 μm or more (d) maximum valley depth Sv is 0.740 μm or more (e) maximum height Sz is 1.800 μm or more (f) kurtosis Sku is 2.80 or more and 4.00 or less (g) skewness Ssk is 0.00 or more and 0.26 or less.   如請求項1或2所述之電解銅箔,其中,上述光澤面側之表面粗糙度Sa為0.380μm以下。  The electrodeposited copper foil according to claim 1 or 2, wherein the surface roughness Sa of the gloss surface side is 0.380 μm or less.   如請求項1至3中之任一項所述之電解銅箔,其中,上述光澤面側之表面粗糙度Sa為0.355μm以下。  The electrodeposited copper foil according to any one of claims 1 to 3, wherein the surface roughness Sa of the glossy surface side is 0.355 μm or less.   如請求項1至4中之任一項所述之電解銅箔,其中,上述光澤面側之表面粗糙度Sa為0.300μm以下。  The electrodeposited copper foil according to any one of claims 1 to 4, wherein the surface roughness Sa of the glossy surface side is 0.300 μm or less.   如請求項1至5中之任一項所述之電解銅箔,其中,上述光澤面側之表面粗糙度Sa為0.200μm以下。  The electrodeposited copper foil according to any one of claims 1 to 5, wherein the surface roughness Sa of the glossy surface side is 0.200 μm or less.   如請求項1至6中之任一項所述之電解銅箔,其中,上述光澤面側之均方根高度Sq為0.490μm以下。  The electrodeposited copper foil according to any one of claims 1 to 6, wherein the root mean square height Sq of the gloss side is 0.490 μm or less.   如請求項1至7中之任一項所述之電解銅箔,其中,上述光澤面側之均方根高度Sq為0.450μm以下。  The electrodeposited copper foil according to any one of claims 1 to 7, wherein the root mean square height Sq of the gloss side is 0.450 μm or less.   如請求項1至8中之任一項所述之電解銅箔,其中,上述光澤面側之均方根高度Sq為0.400μm以下。  The electrodeposited copper foil according to any one of claims 1 to 8, wherein the root mean square height Sq of the gloss side is 0.400 μm or less.   如請求項1至9中之任一項所述之電解銅箔,其中,上述光澤面側之均方根高度Sq為0.330μm以下。  The electrodeposited copper foil according to any one of claims 1 to 9, wherein the root mean square height Sq of the gloss side is 0.330 μm or less.   一種電解銅箔,其具有光澤面及析出面,且於上述光澤面側具有粗化處理層,上述光澤面側之表面粗糙度Sa為0.470μm以下,上述析出面側滿足下述條件中之至少一者:(a)表面粗糙度Sa為0.115μm以上(b)均方根高度Sq為0.120μm以上(c)最大峰高度Sp為0.900μm以上(d)最大谷深度Sv為0.600μm以上(e)最大高度Sz為1.500μm以上(f)峰度Sku為2.75以上且4.00以下(g)偏斜度Ssk為0.00以上且0.35以下。  An electrolytic copper foil having a shiny surface and a precipitated surface, and having a roughened layer on the shiny side, wherein the surface roughness Sa of the shiny surface side is 0.470 μm or less, and the deposition surface side satisfies at least the following conditions. One: (a) the surface roughness Sa is 0.115 μm or more, (b) the root mean square height Sq is 0.120 μm or more, (c) the maximum peak height Sp is 0.900 μm or more, and (d) the maximum valley depth Sv is 0.600 μm or more (e). The maximum height Sz is 1.500 μm or more. (f) The kurtosis Sku is 2.75 or more and 4.00 or less (g) The skewness Ssk is 0.00 or more and 0.35 or less.   如請求項11所述之電解銅箔,其中,上述光澤面側之均方根高度Sq為0.550μm以下。  The electrodeposited copper foil according to claim 11, wherein the root mean square height Sq of the gloss side is 0.550 μm or less.   如請求項1至12中之任一項所述之電解銅箔,其中,於上述光澤面側設置上述粗化處理層前之上述光澤面之表面粗糙度Sa為0.270μm以下。  The electrodeposited copper foil according to any one of claims 1 to 12, wherein the surface roughness Sa of the gloss surface before the roughening treatment layer is provided on the gloss surface side is 0.270 μm or less.   如請求項1至13中之任一項所述之電解銅箔,其中,於上述光澤面側設置上述粗化處理層前之上述光澤面之表面粗糙度Sa為0.130μm以下。  The electrodeposited copper foil according to any one of claims 1 to 13, wherein the surface roughness Sa of the gloss surface before the roughening treatment layer is provided on the gloss surface side is 0.130 μm or less.   如請求項1至14中之任一項所述之電解銅箔,其中,於上述光澤面側設置上述粗化處理層前之上述光澤面之均方根高度Sq為0.315μm以下。  The electrodeposited copper foil according to any one of claims 1 to 14, wherein a root mean square height Sq of the gloss surface before the roughening treatment layer is provided on the gloss surface side is 0.315 μm or less.   如請求項1至15中之任一項所述之電解銅箔,其中,於上述光澤面側設置上述粗化處理層前之上述光澤面之均方根高度Sq為0.120μm以下。  The electrodeposited copper foil according to any one of claims 1 to 15, wherein a root mean square height Sq of the gloss surface before the roughening treatment layer is provided on the gloss surface side is 0.120 μm or less.   一種電解銅箔,其具有光澤面及析出面,且於上述光澤面側不具有粗化處理層,上述光澤面側之表面粗糙度Sa為0.270μm以下,上述析出面側滿足下述條件中之至少一者:(a)表面粗糙度Sa為0.115μm以上(b)均方根高度Sq為0.120μm以上(c)最大峰高度Sp為0.900μm以上(d)最大谷深度Sv為0.600μm以上(e)最大高度Sz為1.500μm以上(f)峰度Sku為2.75以上且4.00以下(g)偏斜度Ssk為0.00以上且0.35以下。  An electrolytic copper foil having a glossy surface and a precipitation surface, and having no roughening treatment layer on the glossy surface side, and having a surface roughness Sa of 0.270 μm or less on the gloss surface side, wherein the deposition surface side satisfies the following conditions At least one of: (a) the surface roughness Sa is 0.115 μm or more, (b) the root mean square height Sq is 0.120 μm or more, (c) the maximum peak height Sp is 0.900 μm or more, and (d) the maximum valley depth Sv is 0.600 μm or more ( e) The maximum height Sz is 1.500 μm or more (f) The kurtosis Sku is 2.75 or more and 4.00 or less (g) The skewness Ssk is 0.00 or more and 0.35 or less.   如請求項17所述之電解銅箔,其中,上述光澤面側之均方根高度Sq為0.315μm以下。  The electrodeposited copper foil according to claim 17, wherein the root mean square height Sq of the gloss side is 0.315 μm or less.   一種電解銅箔,其具有光澤面及析出面,且於上述光澤面側不具有粗化處理層,上述光澤面側之均方根高度Sq為0.315μm以下,上述析出面側滿足下述條件中之至少一者:(a)表面粗糙度Sa為0.115μm以上 (b)均方根高度Sq為0.120μm以上(c)最大峰高度Sp為0.900μm以上(d)最大谷深度Sv為0.600μm以上(e)最大高度Sz為1.500μm以上(f)峰度Sku為2.75以上且4.00以下(g)偏斜度Ssk為0.00以上且0.35以下。  An electrolytic copper foil having a glossy surface and a precipitation surface, and having no roughening treatment layer on the glossy surface side, wherein the root mean square height Sq of the gloss surface side is 0.315 μm or less, and the deposition surface side satisfies the following conditions At least one of: (a) the surface roughness Sa is 0.115 μm or more, (b) the root mean square height Sq is 0.120 μm or more, (c) the maximum peak height Sp is 0.900 μm or more, and (d) the maximum valley depth Sv is 0.600 μm or more. (e) The maximum height Sz is 1.500 μm or more (f) The kurtosis Sku is 2.75 or more and 4.00 or less (g) The skewness Ssk is 0.00 or more and 0.35 or less.   如請求項17至19中之任一項所述之電解銅箔,其中,上述析出面側滿足下述條件中之至少一者:(a)表面粗糙度Sa為0.120μm以上(b)均方根高度Sq為0.130μm以上(c)最大峰高度Sp為1.050μm以上(d)最大谷深度Sv為0.740μm以上(e)最大高度Sz為1.800μm以上(f)峰度Sku為2.80以上且4.00以下(g)偏斜度Ssk為0.00以上且0.26以下。  The electrodeposited copper foil according to any one of the preceding claims, wherein the deposition surface side satisfies at least one of the following conditions: (a) the surface roughness Sa is 0.120 μm or more (b) mean square The root height Sq is 0.130 μm or more, (c) the maximum peak height Sp is 1.050 μm or more, (d) the maximum valley depth Sv is 0.740 μm or more, (e) the maximum height Sz is 1.800 μm or more, and (f) the kurtosis Sku is 2.80 or more and 4.00. The following (g) skewness Ssk is 0.00 or more and 0.26 or less.   如請求項17至20中之任一項所述之電解銅箔,其中,上述光澤面側之表面粗糙度Sa為0.150μm以下。  The electrodeposited copper foil according to any one of claims 17 to 20, wherein the surface roughness Sa of the glossy surface side is 0.150 μm or less.   如請求項17至21中之任一項所述之電解銅箔,其中,上述光澤面側之表面粗糙度Sa為0.130μm以下。  The electrodeposited copper foil according to any one of claims 17 to 21, wherein the surface roughness Sa of the glossy surface side is 0.130 μm or less.   如請求項17至22中之任一項所述之電解銅箔,其中,上述光澤面側之均方根高度Sq為0.200μm以下。  The electrodeposited copper foil according to any one of claims 17 to 22, wherein the root mean square height Sq of the gloss side is 0.200 μm or less.   如請求項17至23中之任一項所述之電解銅箔,其中,上述光澤面側之均方根高度Sq為0.120μm以下。  The electrodeposited copper foil according to any one of claims 17 to 23, wherein the root mean square height Sq of the gloss side is 0.120 μm or less.   如請求項1至24中之任一項所述之電解銅箔,其常溫抗拉強度 為30kg/mm 2以上。 The electrolytic copper foil according to any one of claims 1 to 24, which has a tensile strength at room temperature of 30 kg/mm 2 or more. 如請求項1至25中之任一項所述之電解銅箔,其常溫伸長率為3%以上。  The electrolytic copper foil according to any one of claims 1 to 25, which has a room temperature elongation of 3% or more.   如請求項1至26中之任一項所述之電解銅箔,其高溫抗拉強度為10kg/mm 2以上。 The electrolytic copper foil according to any one of claims 1 to 26, which has a high-temperature tensile strength of 10 kg/mm 2 or more. 如請求項1至27中之任一項所述之電解銅箔,其高溫伸長率為2%以上。  The electrolytic copper foil according to any one of claims 1 to 27, which has a high temperature elongation of 2% or more.   如請求項1至28中之任一項所述之電解銅箔,其於上述析出面側具有粗化處理層。  The electrodeposited copper foil according to any one of claims 1 to 28, which has a roughened layer on the side of the deposition surface.   如請求項1至16中之任一項所述之電解銅箔,其中,上述粗化處理層係由選自由銅、鎳、磷、鎢、砷、鉬、鉻、鐵、釩、鈷及鋅所組成之群中之任一單質或含有任一種以上單質之合金所構成之層。  The electrolytic copper foil according to any one of claims 1 to 16, wherein the roughening treatment layer is selected from the group consisting of copper, nickel, phosphorus, tungsten, arsenic, molybdenum, chromium, iron, vanadium, cobalt and zinc. Any of the constituents of the group or a layer composed of an alloy of any one or more of the simple substances.   如請求項1至16中之任一項所述之電解銅箔,其中,於上述電解銅箔之光澤面側及析出面側之至少一側之粗化處理層之表面具有選自由耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中之1種以上之表面處理層。  The electrodeposited copper foil according to any one of claims 1 to 16, wherein the surface of the roughened layer on at least one of the shiny side and the deposited side of the electrodeposited copper foil has a surface selected from the group consisting of a heat-resistant layer, One or more surface treatment layers of the group consisting of a rust preventive layer, a chromate treatment layer, and a decane coupling treatment layer.   如請求項1至31中之任一項所述之電解銅箔,其中,於上述電解銅箔之光澤面側及析出面側之至少一側具備樹脂層。  The electrodeposited copper foil according to any one of claims 1 to 3, wherein a resin layer is provided on at least one of a gloss side and a deposition surface side of the electrodeposited copper foil.   如請求項32所述之電解銅箔,其中,上述樹脂層設置於上述粗化處理層或上述表面處理層上。  The electrodeposited copper foil according to claim 32, wherein the resin layer is provided on the roughened layer or the surface treated layer.   一種覆銅積層板,其具有請求項1至33中之任一項所述之電解銅箔。  A copper clad laminate having the electrolytic copper foil according to any one of claims 1 to 33.   一種印刷配線板,其具有請求項1至33中之任一項所述之電解銅箔。  A printed wiring board having the electrolytic copper foil according to any one of claims 1 to 33.   一種印刷配線板之製造方法,其使用請求項1至33中之任一項所述之電解銅箔。  A method of producing a printed wiring board using the electrolytic copper foil according to any one of claims 1 to 33.   一種印刷配線板之製造方法,其包含如下步驟:將請求項1至33中之任一項所述之電解銅箔與絕緣基板積層而製作覆銅積層板之後,藉由半加成法、減成法、部分加成法或改良半加成法中之任一方法而形成電路。  A method of manufacturing a printed wiring board, comprising the steps of: laminating an electrolytic copper foil according to any one of claims 1 to 33 and an insulating substrate to form a copper clad laminate, and then semi-additively reducing The circuit is formed by any one of a method of forming, a partial addition, or a modified semi-additive.   一種電子機器,其具有請求項35所述之印刷配線板。  An electronic machine having the printed wiring board of claim 35.   一種電子機器之製造方法,其使用請求項35所述之印刷配線板。  A method of manufacturing an electronic device using the printed wiring board of claim 35.  
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