TW201843749A - 半導體裝置及藉由鐵磁性材料形成磁場屏蔽的方法 - Google Patents

半導體裝置及藉由鐵磁性材料形成磁場屏蔽的方法 Download PDF

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TW201843749A
TW201843749A TW107102718A TW107102718A TW201843749A TW 201843749 A TW201843749 A TW 201843749A TW 107102718 A TW107102718 A TW 107102718A TW 107102718 A TW107102718 A TW 107102718A TW 201843749 A TW201843749 A TW 201843749A
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semiconductor
substrate
ferromagnetic
ferromagnetic material
layer
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TW107102718A
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TWI786082B (zh
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曹成源
崔善弘
金昌伍
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新加坡商星科金朋有限公司
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    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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Abstract

一種半導體裝置係具有一基板以及一被設置在該基板之上的半導體構件。一離散的電性裝置可被設置在該基板之上。一密封劑係被沉積在該基板以及半導體構件之上。一鐵磁性材料係被設置在該密封劑之上。該鐵磁性材料係包含一或多種鐵氧體類型的材料、或是其它具有一呈現鐵磁性性質的晶體結構的材料。該鐵磁性材料係包含一鐵磁性膜，其係具有一聚對苯二甲酸乙二酯層、鐵氧體層、以及黏著層。該鐵磁性膜係從具有鐵磁性膜的板片來加以提供的。一屏蔽層係被形成在該鐵磁性材料之上以及在該半導體構件的周圍。該鐵磁性材料係提供磁性屏蔽以藉由形成一低磁阻的磁通量迴路以改變磁通量場的方向以遠離該半導體晶粒，來降低磁通量場在包含低頻干擾的所有頻帶上對於該半導體晶粒的影響。

Description

半導體裝置及藉由鐵磁性材料形成磁場屏蔽的方法
本發明係大致有關於半導體裝置，並且更具體而言係有關於一種半導體裝置以及利用鐵磁性材料形成磁場屏蔽的方法。
半導體裝置係常見於現代的電子產品中。半導體裝置係執行廣範圍的功能，例如是信號處理、高速的計算、發送及接收電磁信號、控制電子裝置、轉換太陽光成為電力、以及產生用於電視顯示器的視覺影像。半導體裝置係見於通訊、電力轉換、網路、電腦、娛樂、以及消費者產品的領域中。半導體裝置亦見於軍事的應用、航空、汽車、工業用的控制器、以及辦公室設備中。
尤其在例如是射頻(RF)無線通訊的高頻應用中，半導體裝置通常包含一或多個整合的被動裝置(IPD)以執行必要的電性功能。該些IPD係容易受到磁B場、電磁干擾(EMI)、射頻干擾(RFI)、諧波失真、或是其它裝置間的干擾，例如是電容性、電感性、或是導電性的耦合(亦以串音著稱)的影響，此可能會干擾到其操作。數位電路的高速的切換亦產生干擾。該半導體封裝可以利用金屬屏蔽而被封入，以隔離靈敏的電路。單獨該金屬屏蔽對於例如是低頻的磁B場的某些類型的干擾而言，通常是不太有效的。
根據本發明之一個態樣，其提供一種製造半導體裝置之方法，其 係包括：提供一基板；在該基板之上設置一半導體晶粒或構件；在該基板以及半導體晶粒或構件之上沉積一密封劑；在該密封劑之上設置一黏著的鐵磁性膜；以及在該黏著的鐵磁性膜之上以及在該半導體晶粒或構件的周圍形成一屏蔽層，其中該屏蔽層係接觸該密封劑的一側表面。
根據本發明之另一個態樣，其提供一種製造半導體裝置之方法，其係包括：提供一基板；在該基板之上設置一半導體構件；以及在該半導體構件之上設置一鐵磁性材料。
根據本發明之另一個態樣，其提供一種半導體裝置，其係包括：一基板；一半導體晶粒或構件，其係被設置在該基板之上；一密封劑，其係被沉積在該基板以及半導體晶粒或構件之上；一鐵磁性材料，其係被設置在該密封劑之上；以及一屏蔽層，其係被形成在該鐵磁性材料之上以及在該半導體晶粒或構件的周圍。
100‧‧‧半導體晶圓
102‧‧‧基底基板材料
104‧‧‧半導體晶粒(構件)
106‧‧‧切割道
108‧‧‧背表面(非主動表面)
110‧‧‧主動表面
112‧‧‧導電層
114‧‧‧凸塊
118‧‧‧鋸刀(雷射切割工具)
120‧‧‧基板
122‧‧‧導電層
124‧‧‧絕緣層
126‧‧‧表面
128‧‧‧表面
130‧‧‧核心材料
136‧‧‧離散的電性裝置
138‧‧‧凸塊(導電膏)
140‧‧‧密封劑(成型化合物)
142‧‧‧凸塊
150‧‧‧鐵磁性材料
152‧‧‧鐵磁性膜
153‧‧‧釋放層
154‧‧‧板片
155‧‧‧切割線
156‧‧‧聚對苯二甲酸乙二酯(PET)層
157‧‧‧鐵氧體層
158‧‧‧黏著層
160‧‧‧屏蔽層
162‧‧‧側表面
164‧‧‧側表面
170‧‧‧半導體封裝
172‧‧‧外部的磁通量B場
180‧‧‧半導體封裝
182‧‧‧表面
184‧‧‧外部的磁通量B場
200‧‧‧電子裝置
202‧‧‧PCB
204‧‧‧信號線路
206‧‧‧接合導線封裝
208‧‧‧覆晶
210‧‧‧球格陣列(BGA)
212‧‧‧凸塊晶片載體(BCC)
216‧‧‧平台柵格陣列(LGA)
218‧‧‧多晶片的模組(MCM)
220‧‧‧四邊扁平無引腳封裝(QFN)
222‧‧‧四邊扁平封裝
224‧‧‧嵌入式晶圓層級球格陣列(eWLB)
226‧‧‧晶圓級晶片尺寸封裝(WLCSP)
圖1a-1c係描繪一半導體晶圓，其中複數個半導體晶粒係藉由切割道來加以分開的；圖2a-2j係描繪一種利用一鐵磁性材料來形成磁場屏蔽的製程；圖3係描繪一具有利用一鐵磁性材料的磁場屏蔽的半導體封裝；圖4係描繪一具有利用一鐵磁性材料的磁場屏蔽的半導體封裝的另一實施例；以及圖5係描繪一印刷電路板(PCB)，其中不同類型的封裝係被安裝到該PCB的一表面。
本發明係在以下參考該些圖式的說明中，以一或多個實施例來加 以描述，其中相同的元件符號係代表相同或類似的元件。儘管本發明係以用於達成本發明之目的之最佳模式來加以描述，但熟習此項技術者將會體認到的是，其係欲涵蓋可內含在藉由以下的揭露內容及圖式所支持之所附的申請專利範圍及該些申請專利範圍的等同項所界定的本發明的精神與範疇內的替換物、修改以及等同物。如同在此所用的術語"半導體晶粒"係指該些字詞的單數及複數形兩者，並且於是可以指稱單一半導體裝置以及多個半導體裝置兩者。
半導體裝置一般是利用兩個複雜的製程：前端製造及後端製造來加以製造。前端製造係牽涉到複數個晶粒在一半導體晶圓的表面上的形成。在該晶圓上的每一個晶粒係包含電連接以形成功能電路的主動及被動電性構件。例如是電晶體及二極體的主動電性構件係具有控制電流流動的能力。例如是電容器、電感器及電阻器的被動電性構件係產生執行電路功能所必要的電壓及電流之間的一種關係。
後端製造係指切割或單粒化完成的晶圓成為個別的半導體晶粒，並且為了結構的支撐、電互連以及環境的隔離來封裝該半導體晶粒。為了單粒化該些半導體晶粒，晶圓係沿著該晶圓的非功能區域(稱為切割道或劃線)來加以劃線且截斷。該晶圓係利用一雷射切割工具或鋸刀而被單粒化。在單粒化之後，該個別的半導體晶粒係被安裝到一封裝基板，該封裝基板係包含用於和其它系統構件互連的接腳或接觸墊。形成在半導體晶粒之上的接觸墊係接著連接至該封裝內的接觸墊。該些電連接可以利用導電層、凸塊、柱形凸塊、導電膏、或是引線接合來做成。一密封劑或是其它成型材料係沉積在該封裝之上，以提供實體支撐及電性隔離。該完成的封裝係接著被插入一電性系統中，並且使得該半導體裝置的功能為可供其它系統構件利用的。
圖1a係展示一具有一種例如是矽、鍺、磷化鋁、砷化鋁、砷化鎵、氮化鎵、磷化銦、碳化矽、或是其它用於結構的支撐的基體材料的基底基板材 料102的半導體晶圓100。複數個半導體晶粒或構件104係被形成在晶圓100上，半導體晶粒104係藉由一非主動的晶粒間的晶圓區域或切割道106來加以分開。切割道106係提供切割區域以將半導體晶圓100單粒化成為個別的半導體晶粒104。在一實施例中，半導體晶圓100係具有一100-450毫米(mm)的寬度或直徑。
圖1b係展示半導體晶圓100的一部分的橫截面圖。每一個半導體晶粒104係具有一背表面或非主動表面108以及一包含類比或數位電路的主動表面110，該類比或數位電路係被實施為形成在該晶粒內並且根據該晶粒的電性設計及功能來電互連的主動元件、被動元件、導電層、以及介電層。例如，該電路可包含一或多個電晶體、二極體、以及其它的電路元件，其係被形成在主動表面110內以實施類比電路或數位電路，其例如是一數位信號處理器(DSP)、特殊應用積體電路(ASIC)、記憶體、或是其它的信號處理電路。半導體晶粒104亦可包含例如是電感器、電容器及電阻器之IPD，以用於RF信號處理。
一導電層112係利用PVD、CVD、電解的電鍍、無電的電鍍製程、或是其它適當的金屬沉積製程而被形成在主動表面110之上。導電層112可以是一或多層的鋁(Al)、銅(Cu)、錫(Sn)、鎳(Ni)、金(Au)、銀(Ag)、或是其它適當的導電材料。導電層112係運作為電連接至主動表面110上的電路的接觸墊。
一種導電的凸塊材料係利用一蒸鍍、電解的電鍍、無電的電鍍、球式滴落、或是網版印刷製程來沉積在導電層112之上。該凸塊材料可以是具有一選配的助熔溶劑的Al、Sn、Ni、Au、Ag、Pb、Bi、Cu、焊料、或是其之一組合。例如，該凸塊材料可以是共晶Sn/Pb、高鉛的焊料、或是無鉛的焊料。該凸塊材料係利用一適當的附接或是接合製程而被接合到導電層112。在一實施例中，該凸塊材料係藉由加熱該材料超過其熔點來加以回焊，以形成球或凸塊114。在一實施例中，凸塊114係被形成在具有一潤濕層、一阻障層、以及一黏著層的凸塊下金屬化(UBM)之上。凸塊114亦可被壓縮接合或是熱壓接合到導電 層112。凸塊114係代表可被形成在導電層112之上的一種類型的互連結構。該些互連結構亦可以使用接合線、導電膏、柱形凸塊、微凸塊、或是其它的電互連。
在圖1c中，半導體晶圓100係利用一鋸刀或雷射切割工具118，透過切割道106而被單粒化成為個別的半導體晶粒104。該些個別的半導體晶粒104可以在單粒化之後加以檢查及電性測試，以用於KGD的識別。
圖2a-2j係描繪一種利用鐵磁性材料來形成磁場屏蔽的製程。圖2a係展示包含導電層122及絕緣層124的基板120的橫截面圖。導電層122可以是一或多層的Al、Cu、Sn、Ni、Au、Ag、或是其它適當的導電材料。導電層122係提供橫跨基板120的水平的電互連、以及在基板120的表面126及表面128之間的垂直的電互連。根據半導體晶粒104的設計及功能，導電層122的部分可以是電性共通或是電性隔離的。絕緣層124係包含一或多層的二氧化矽(SiO2)、矽氮化物(Si3N4)、氮氧化矽(SiON)、五氧化二鉭(Ta2O5)、鋁氧化物(Al2O3)、阻焊劑、聚醯亞胺、苯環丁烯(BCB)、聚苯並噁唑(PBO)、以及其它具有類似絕緣及結構的性質之材料。絕緣層124係提供在導電層122之間的隔離。基板120進一步包含例如是玻璃纖維的核心材料130，以強化該基板並且降低翹曲。
在圖2b中，來自圖1c的半導體晶粒104係利用一拾放操作而被設置在基板120之上，其中主動表面110以及凸塊114係被定向朝向表面126。離散的電性裝置136亦被設置在基板120的表面126之上。在一實施例中，離散的電性裝置136是一半導體裝置或者例如是一電阻器、電容器及電感器的IPD。圖2c係展示半導體晶粒104藉由回焊凸塊114而被接合到基板120的導電層122的一第一部分。離散的電性裝置136係利用凸塊或導電膏138而被接合到基板120的導電層122的一第二部分。
一密封劑或成型化合物140係利用一膏印刷、壓縮成型、轉移成型、液體密封劑成型、真空疊層、旋轉塗覆、或是其它適當的施用器，而被沉 積在半導體晶粒104、離散的電性裝置136、以及基板120之上。密封劑140可以是聚合物複合材料，例如是具有填充物的環氧樹脂、具有填充物的環氧丙烯酸酯、或是具有適當的填充物的聚合物。密封劑140是非導電的，提供結構的支撐，並且在環境上保護該半導體裝置免於外部的元素及污染物。
一種導電的凸塊材料係利用一蒸鍍、電解的電鍍、無電的電鍍、球式滴落、或是網版印刷製程，而被沉積在基板120的表面128上的導電層122之上。該凸塊材料可以是具有一選配的助熔溶劑的Al、Sn、Ni、Au、Ag、Pb、Bi、Cu、焊料、以及其之組合。例如，該凸塊材料可以是共晶Sn/Pb、高鉛的焊料、或是無鉛的焊料。該凸塊材料係利用一適當的附接或接合製程而被接合到導電層122。在一實施例中，該凸塊材料係藉由加熱該材料超過其熔點來加以回焊，以形成球或凸塊142。在一實施例中，凸塊142係被形成在一具有一潤濕層、阻障層、以及黏著層的UBM之上。凸塊142亦可被壓縮接合或是熱壓接合到導電層122。凸塊142係代表一種可被形成在導電層122之上的互連結構的類型。該互連結構亦可以使用接合線、導電膏、柱形凸塊、微凸塊、或是其它的電互連。
半導體晶粒104可能會包含容易受磁通量B場、EMI、RFI、諧波失真、以及裝置間的干擾的影響的IPD。例如，內含在半導體晶粒104之內的IPD係提供例如是共振器、高通濾波器、低通濾波器、帶通濾波器、對稱的Hi-Q諧振的變壓器、以及調諧電容器之高頻的應用所需的電性特徵。
為了降低磁通量B場、EMI以及RFI的影響，如同在圖2d中所示，鐵磁性材料150係被設置在半導體晶粒104的背表面108之上。鐵磁性材料150係包含一或多種從鈷(Co)、鐵(Fe)、鐵氧化物(Fe2O3)、鎳(Ni)、鉻氧化物(CrO2)、釓(Gd)、鋱(Tb)、鏑(Dy)、MnBi、MnSb、MnAs、以及其它具有一呈現鐵磁性性質的晶體結構的鐵氧體(ferrite)或材料之群組選出的材料。鐵磁性材料150亦可以是具有鑭系元素的稀土材料，其係具有在良好定域化的f-軌域(orbital)中帶有大 磁矩的能力。
在一實施例中，如同在圖2e中所示，鐵磁性材料150係被實施為鐵磁性膜152，其係被黏貼至具有許多此種鐵磁性膜的板片154。鐵磁性膜152的板片154是一低成本且容易的選項，以在半導體晶粒104的背表面108之上形成鐵磁性材料150。在圖2f中，鐵磁性膜152係從板片154的釋放層153，沿著切割線155而被剝離或移除。圖2g係展示鐵磁性膜152的進一步的細節，其係包含聚對苯二甲酸乙二酯(PET)層156、鐵氧體層157、以及黏著層158。在一實施例中，PET層156係具有一0.01-0.05mm的厚度，鐵氧體層157係具有一0.05-0.30mm的厚度，並且黏著層158係具有一0.01-0.05mm的厚度。
在圖2h中，一如同從板片154被移除的鐵磁性膜152係被設置在半導體晶粒104的背表面108之上。每一個鐵磁性膜152係具有一長度以及一寬度是小於或等於密封劑140的一長度以及寬度。圖2i係展示鐵磁性膜152是利用黏著劑158而被接合到半導體晶粒104的背表面108。
在圖2j中，一屏蔽層160係被形成在鐵磁性材料150、密封劑140的側表面162、以及基板120的側表面164之上。屏蔽層160可以是一或多層的Al、Cu、Sn、Ni、Au、Ag、或是其它適當的導電材料。或者是，屏蔽層160可以是羰基鐵、不銹鋼、鎳銀、低碳鋼、矽鐵鋼、箔、導電樹脂、碳黑、鋁薄片、以及其它能夠降低磁通量B場、EMI、RFI、以及其它裝置間的干擾的影響的金屬及合成物。
圖3是描繪具有鐵磁性材料150及屏蔽層160的半導體封裝170，其係由於高磁導率以及低磁阻而將入射到該半導體封裝的外部的磁通量B場172感應流過該鐵磁性材料，而不是通過半導體晶粒104以及離散的電性裝置136。鐵磁性材料150係提供磁性屏蔽以藉由形成一低磁阻的磁通量迴路來改變磁通量B場的方向以遠離半導體晶粒104以及離散的電性裝置136，來降低磁通量B場172 在包含低頻干擾的所有頻帶上對於半導體晶粒104以及離散的電性裝置136的影響。鐵磁性材料150例如是藉由從板片154剝離的鐵磁性膜152的附接，來降低用以達成磁性屏蔽的製造成本。
圖4係描繪半導體封裝180，其中鐵磁性材料150係接觸半導體晶粒104的背表面108。為了露出背表面108，密封劑140係進行一背面研磨操作或蝕刻製程，以平坦化密封劑140的表面182與半導體晶粒104的背表面108。同樣地，鐵磁性材料150係由於高磁導率以及低磁阻而將入射到該半導體封裝的外部的磁通量B場184感應流過該鐵磁性材料，而不是通過半導體晶粒104以及離散的電性裝置136。鐵磁性材料150係提供磁性屏蔽以藉由形成一低磁阻的磁通量迴路來改變磁通量B場的方向以遠離半導體晶粒104以及離散的電性裝置136，來降低磁通量B場184在包含低頻干擾的所有頻帶上對於半導體晶粒104以及離散的電性裝置136的影響。鐵磁性材料150例如是藉由從板片154剝離的鐵磁性膜152的附接，來降低用以達成磁性屏蔽的製造成本。
圖5係描繪具有一晶片載體基板或PCB 202的電子裝置200，其中包含半導體封裝170或180的複數個半導體封裝係被安裝在PCB 202的一表面之上。電子裝置200根據應用而可以具有一種類型的半導體封裝、或是多種類型的半導體封裝。
電子裝置200可以是一獨立的系統，其係利用該些半導體封裝以執行一或多個電性功能。或者是，電子裝置200可以是一較大的系統的一子構件。例如，電子裝置200可以是一平板電腦、行動電話、數位相機、通訊系統、或是其它電子裝置的部分。或者是，電子裝置200可以是可被插入到一電腦中的一顯示卡、網路介面卡、或是其它的信號處理卡。該些半導體封裝可包含微處理器、記憶體、ASIC、邏輯電路、類比電路、RF電路、離散的裝置、或是其它半導體晶粒或電性構件。小型化及重量縮減對於欲被市場接受的產品而言是重 要的。在半導體裝置之間的距離可被縮短以達成較高的密度。
在圖5中，PCB 202係提供一個一般的基板，以用於被安裝在該PCB之上的半導體封裝的結構上的支撐及電互連。導電的信號線路204係利用蒸鍍、電解的電鍍、無電的電鍍、網版印刷、或是其它適當的金屬沉積製程而被形成在PCB 202的一表面之上、或是在PCB 202的層之內。信號線路204係提供用於在該些半導體封裝、所安裝的構件、以及其它外部的系統構件的每一個之間的電性通訊。線路204亦提供電源以及接地的連接至該些半導體封裝的每一個。
在某些實施例中，一種半導體裝置係具有兩個封裝層級。第一層級的封裝是一種用於機械式及電性地附接該半導體晶粒至一中間的基板的技術。第二層級的封裝係牽涉到機械式及電性地附接該中間的基板至該PCB。在其它實施例中，一種半導體裝置可以只有該第一層級的封裝，其中該晶粒係直接機械式及電性地被安裝至該PCB。
為了說明之目的，包含接合導線封裝206及覆晶208的數種類型的第一層級的封裝係被展示在PCB 202上。此外，數種類型的第二層級的封裝，其包含球格陣列(BGA)210、凸塊晶片載體(BCC)212、平台柵格陣列(LGA)216、多晶片的模組(MCM)218、四邊扁平無引腳封裝(QFN)220、四邊扁平封裝222、嵌入式晶圓層級球格陣列(eWLB)224、以及晶圓級晶片尺寸封裝(WLCSP)226係被展示安裝在PCB 202上。在一實施例中，eWLB 224是一扇出晶圓層級的封裝(Fo-WLP)，並且WLCSP 226是一扇入晶圓層級的封裝(Fi-WLP)。依據系統的需求，被配置有第一及第二層級的封裝類型的任意組合的半導體封裝以及其它電子構件的任意組合都可以連接至PCB 202。在某些實施例中，電子裝置200係包含單一附接的半導體封裝，而其它實施例則需要多個互連的封裝。藉由在單一基板之上組合一或多個半導體封裝，製造商可以將預製的構件納入到電子裝置及系統內。因為該些半導體封裝係包含複雜的功能，所以電子裝置可以利用較 不昂貴的構件以及一精簡的製程來加以製造。所產生的裝置是較不可能失效，而且製造起來是較不昂貴的，此係產生較低的成本給消費者。
儘管本發明的一或多個實施例已經詳細地描述，但是本領域技術人員將會體認到對於那些實施例可以做成修改及調適，而不脫離如同在以下的申請專利範圍中所闡述的本發明的範疇。

Claims (15)

  1. 一種製造半導體裝置之方法，其係包括：提供一基板；在該基板之上設置一半導體晶粒或構件；在該基板以及半導體晶粒或構件之上沉積一密封劑；在該密封劑之上設置一黏著的鐵磁性膜；以及在該黏著的鐵磁性膜之上以及在該半導體晶粒或構件的周圍形成一屏蔽層，其中該屏蔽層係接觸該密封劑的一側表面。
  2. 如申請專利範圍第1項之方法，其中該黏著的鐵磁性膜係包含一聚對苯二甲酸乙二酯層、鐵氧體層、以及黏著層。
  3. 如申請專利範圍第1項之方法，其進一步包含：提供一具有黏著的鐵磁性膜的板片；以及從該具有黏著的鐵磁性膜的板片移除該黏著的鐵磁性膜。
  4. 如申請專利範圍第1項之方法，其進一步包含設置該黏著的鐵磁性膜以接觸該半導體晶粒或構件的一表面。
  5. 如申請專利範圍第1項之方法，其進一步包含在該基板之上設置一離散的電性裝置。
  6. 一種製造半導體裝置之方法，其係包括：提供一基板；在該基板之上設置一半導體構件；以及在該半導體構件之上設置一鐵磁性材料。
  7. 如申請專利範圍第6項之方法，其進一步包含在該鐵磁性材料之上以及在該半導體構件的周圍形成一屏蔽層。
  8. 如申請專利範圍第6項之方法，其進一步包含在該基板以及半導 體構件之上沉積一密封劑，其中該鐵磁性材料係被設置在該密封劑之上。
  9. 如申請專利範圍第6項之方法，其中該鐵磁性材料係包含一鐵磁性膜。
  10. 如申請專利範圍第9項之方法，其中該鐵磁性膜係包含一聚對苯二甲酸乙二酯層、鐵氧體層、以及黏著層。
  11. 一種半導體裝置，其係包括：一基板；一半導體晶粒或構件，其係被設置在該基板之上；一密封劑，其係被沉積在該基板以及半導體晶粒或構件之上；一鐵磁性材料，其係被設置在該密封劑之上；以及一屏蔽層，其係被形成在該鐵磁性材料之上以及在該半導體晶粒或構件的周圍。
  12. 如申請專利範圍第11項之半導體裝置，其中該鐵磁性材料係包含一鐵磁性膜。
  13. 如申請專利範圍第12項之半導體裝置，其中該鐵磁性膜的一長度及寬度是與該密封劑的一長度及寬度一致的。
  14. 如申請專利範圍第11項之半導體裝置，其中該鐵磁性材料係接觸該半導體晶粒或構件的一表面。
  15. 如申請專利範圍第11項之半導體裝置，其進一步包含一被設置在該基板之上的離散的電性裝置。
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