TW201836438A - Plasma processing apparatus and shower head - Google Patents
Plasma processing apparatus and shower head Download PDFInfo
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- TW201836438A TW201836438A TW106139245A TW106139245A TW201836438A TW 201836438 A TW201836438 A TW 201836438A TW 106139245 A TW106139245 A TW 106139245A TW 106139245 A TW106139245 A TW 106139245A TW 201836438 A TW201836438 A TW 201836438A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Abstract
Description
[0001] 本發明，係關於具有複數個分割噴頭之電漿處理裝置及噴頭。[0001] The present invention relates to a plasma processing apparatus and a nozzle having a plurality of divided nozzles.
[0002] 在液晶顯示裝置(LCD)等的平板顯示器(FPD)製造工程中，係對平面視圖矩形之玻璃基板施予蝕刻處理或成膜處理等的電漿處理。為了進行像這樣的電漿處理，而使用電漿蝕刻裝置或電漿CVD裝置等的各種電漿處理裝置。作為電漿處理裝置，係可適當地使用能在高真空度下獲得高密度之電漿的感應耦合電漿(Inductively Coupled Plasma: ICP)處理裝置。 [0003] 在以往的感應耦合電漿處理裝置中，係在高頻天線與處理室之間配置有與玻璃基板對應之平面視圖矩形的介電質窗，使來自供給了高頻電力之高頻天線的磁場透過介電質窗，在處理之內部，從處理氣體生成感應耦合電漿。然而，近年來，隨著FPD之世代的進步，玻璃基板呈大型化例如對約2800mm×約3000mm之玻璃基板施予電漿處理。伴隨此，介電質窗亦大型化，但由於構成介電質窗之石英等的介電質材料為易脆，因此，不適合大型化。 [0004] 因此，提出如下述之感應耦合電漿處理裝置：使用由延性材料即金屬所構成之平面視圖矩形的金屬窗作為處理室之頂部而代替介電質窗，以作為分隔件之絕緣構件來分割金屬窗，在所分割之金屬窗的各部誘發循環電流，從而在處理室之內部形成感應電場，並藉由該感應電場產生電漿。 [先前技術文獻] [專利文獻] [0005] [專利文獻1]日本特開2012-227427號公報[0002] In a manufacturing process of a flat panel display (FPD) such as a liquid crystal display device (LCD), a plasma treatment such as an etching process or a film forming process is performed on a rectangular glass substrate in a plan view. In order to perform such a plasma processing, various plasma processing apparatuses, such as a plasma etching apparatus and a plasma CVD apparatus, are used. As the plasma processing device, an Inductively Coupled Plasma (ICP) processing device capable of obtaining a high-density plasma under high vacuum can be suitably used. [0003] In a conventional inductively-coupled plasma processing apparatus, a rectangular dielectric window in a plan view corresponding to a glass substrate is disposed between a high-frequency antenna and a processing chamber, so that high-frequency power from a high-frequency power source is supplied. The magnetic field of the antenna passes through the dielectric window, and inside the process, an inductively coupled plasma is generated from the process gas. However, in recent years, as the generation of FPD progresses, glass substrates have become larger. For example, plasma treatment has been performed on glass substrates of about 2800 mm × about 3000 mm. Along with this, the dielectric window is also enlarged. However, since a dielectric material such as quartz constituting the dielectric window is fragile, it is not suitable for the enlargement. [0004] Therefore, an inductively-coupled plasma processing device is proposed as follows: a rectangular metal window in a plan view made of a ductile material, that is, a metal, is used as the top of the processing chamber instead of the dielectric window as the insulating member of the partition The metal window is divided, and a circulating current is induced in each part of the divided metal window, so that an induced electric field is formed inside the processing chamber, and a plasma is generated by the induced electric field. [Prior Art Document] [Patent Document] [0005] [Patent Document 1] Japanese Patent Laid-Open No. 2012-227427
[本發明所欲解決之課題] [0006] 然而，當對應於玻璃基板之大型化而處理室亦大型化時，則因各種要因，難以對玻璃基板施予均勻的電漿處理。 [0007] 本發明之目的，係在於提供一種可對基板施予均勻的電漿處理之電漿處理裝置及噴頭。 [用以解決課題之手段] [0008] 為了達成上述目的，本發明之電漿處理裝置，係被構成為具備有：處理室，收容平面視圖矩形的基板；高頻天線，用以生成感應耦合電漿；及平面視圖矩形之噴頭，作為前述處理室之金屬窗而發揮功能，前述噴頭，係在將從前述噴頭之中央朝向外周的方向設成為徑方向，且將追隨前述噴頭之外周的方向設成為周方向時，在前述徑方向及前述周方向上，經由絕緣構件被分割成複數個分割噴頭，各前述分割噴頭，係可個別地將處理氣體導入前述處理室之內部，該電漿處理裝置，其特徵係，前述複數個分割噴頭，係被分成複數個分割噴頭群，前述複數個分割噴頭群，係包含有：第1分割噴頭群，包含位於前述噴頭之角部的前述分割噴頭；第2分割噴頭群，位於前述噴頭之外周，且包含被夾在前述第1分割噴頭群之各前述分割噴頭的前述分割噴頭；第3分割噴頭群，包含存在於前述噴頭之中央的前述分割噴頭；及第4噴頭群，包含被夾在前述第3分割噴頭群及前述第1分割噴頭群或前述第2分割噴頭群的前述分割噴頭，朝前述複數個分割噴頭群的每一個所供給之前述處理氣體的流量，係個別地被控制。 [0009] 為了達成上述目的，本發明之噴頭，係被構成為作為收容平面視圖矩形的基板之處理室之金屬窗而發揮功能的平面視圖矩形之噴頭，在將從前述噴頭之中央朝向外周的方向設成為徑方向，且將追隨前述噴頭之外周的方向設成為周方向時，在前述徑方向及前述周方向上，經由絕緣構件被分割成複數個分割噴頭，各前述分割噴頭，係可個別地將處理氣體導入前述處理室之內部，該噴頭，其特徵係，前述複數個分割噴頭，係被分成複數個分割噴頭群，前述複數個分割噴頭群，係包含有：第1分割噴頭群，包含位於前述噴頭之角部的前述分割噴頭；第2分割噴頭群，位於前述噴頭之外周，且包含被夾在前述第1分割噴頭群之各前述分割噴頭的前述分割噴頭；第3分割噴頭群，包含存在於前述噴頭之中央的前述分割噴頭；及第4噴頭群，包含被夾在前述第3分割噴頭群及前述第1分割噴頭群或前述第2分割噴頭群的前述分割噴頭，朝前述複數個分割噴頭群的每一個所供給之前述處理氣體的流量，係個別地被控制。 [0010] 為了達成上述目的，本發明之電漿處理裝置，係被構成為具備有：處理室，收容平面視圖矩形的基板；高頻天線，用以生成感應耦合電漿；及平面視圖矩形之噴頭，作為前述處理室之金屬窗而發揮功能，前述噴頭，係在將從前述噴頭之中央朝向外周的方向設成為徑方向，且將追隨前述噴頭之外周的方向設成為周方向時，在前述徑方向及前述周方向上，經由絕緣構件被分割成複數個分割噴頭，各前述分割噴頭，係可個別地將處理氣體導入前述處理室之內部，該電漿處理裝置，其特徵係，前述複數個分割噴頭，係被分成複數個分割噴頭群，前述複數個分割噴頭群，係包含有：第1分割噴頭群，包含位於前述噴頭之角部的前述分割噴頭；第2分割噴頭群，位於前述噴頭之外周，且包含被夾在前述第1分割噴頭群之各前述分割噴頭的前述分割噴頭；第3分割噴頭群，包含存在於前述噴頭之中央的前述分割噴頭；及第4噴頭群，包含被夾在前述第3分割噴頭群及前述第1分割噴頭群或前述第2分割噴頭群的前述分割噴頭，朝前述複數個分割噴頭群的每一個所供給之前述處理氣體的流量，係個別地被控制，前述高頻天線，係被配置為與前述複數個分割噴頭群的每一個對應，前述複數個分割噴頭群的每一個形成於前述處理室之內部的感應電場，係個別地被控制，「朝前述複數個分割噴頭群的每一個所供給之前述處理氣體的流量」及「前述複數個分割噴頭群的每一個形成於前述處理室之內部的感應電場」，係彼此獨立地被控制。 [0011] 為了達成上述目的，本發明之噴頭，係被構成為作為收容平面視圖矩形的基板之處理室之金屬窗而發揮功能的平面視圖矩形之噴頭，在將從前述噴頭之中央朝向外周的方向設成為徑方向，且將追隨前述噴頭之外周的方向設成為周方向時，在前述徑方向及前述周方向上，經由絕緣構件被分割成複數個分割噴頭，各前述分割噴頭，係可個別地將處理氣體導入前述處理室之內部，該噴頭，其特徵係，前述複數個分割噴頭，係被分成複數個分割噴頭群，前述複數個分割噴頭群，係包含有：第1分割噴頭群，包含位於前述噴頭之角部的前述分割噴頭；第2分割噴頭群，位於前述噴頭之外周，且包含被夾在前述第1分割噴頭群之各前述分割噴頭的前述分割噴頭；第3分割噴頭群，包含存在於前述噴頭之中央的前述分割噴頭；及第4噴頭群，包含被夾在前述第3分割噴頭群及前述第1分割噴頭群或前述第2分割噴頭群的前述分割噴頭，朝前述複數個分割噴頭群的每一個所供給之前述處理氣體的流量，係個別地被控制，高頻天線被配置為與前述複數個分割噴頭群的每一個對應，前述複數個分割噴頭群的每一個形成於前述處理室之內部的感應電場，係個別地被控制，「朝前述複數個分割噴頭群的每一個所供給之前述處理氣體的流量」及「前述複數個分割噴頭群的每一個形成於前述處理室之內部的感應電場」，係彼此獨立地被控制。 [發明之效果] [0012] 根據本發明，由於朝複數個分割噴頭群的每一個所供給之處理氣體的流量，係個別地被控制，因此，可個別地控制從各分割噴頭群被導入處理室之處理氣體的流量。藉此，可任意地調整處理室之內部之處理氣體的分布。又，朝作為金屬窗而發揮功能之複數個分割噴頭群的每一個個別地誘發循環電流，從而在處理室之內部形成感應電場，藉此，可任意地調整處理室之內部之感應電場的分布。亦即，由於可在處理室之內部獨立地控制處理氣體的分布與感應電場的分布，因此，為了與各種狀況對應，可在各處個別地控制蝕刻速率，從而，可對基板施予均勻的電漿處理。[Problems to be Solved by the Invention] 0006 [0006] However, when the processing chamber is also enlarged in accordance with the increase in the size of the glass substrate, it is difficult to apply uniform plasma treatment to the glass substrate due to various factors. [0007] An object of the present invention is to provide a plasma processing apparatus and a nozzle capable of applying uniform plasma processing to a substrate. [Means to Solve the Problems] [0008] In order to achieve the above-mentioned object, the plasma processing apparatus of the present invention is configured to include: a processing chamber, which houses a rectangular substrate in plan view, and a high-frequency antenna for generating inductive coupling. Plasma; and rectangular nozzle in plan view, which functions as the metal window of the processing chamber. The nozzle is set in a radial direction from the center of the nozzle to the outer periphery, and will follow the direction of the outer periphery of the nozzle. When it is set to the circumferential direction, the radial direction and the circumferential direction are divided into a plurality of divided nozzles through an insulating member, and each of the divided nozzles can individually introduce a processing gas into the inside of the processing chamber. The device is characterized in that the plurality of divided nozzles are divided into a plurality of divided nozzle groups, and the plurality of divided nozzle groups includes: a first divided nozzle group including the divided nozzles located at a corner of the nozzle; The second divided nozzle group is located on the outer periphery of the nozzle and includes each of the divided nozzles sandwiched by the first divided nozzle group. The third divided head group, the third divided head group including the divided head that is located in the center of the head, and the fourth head group, which includes the third divided head group and the first divided head group or the first divided head group. The divided nozzles of the two divided nozzle group are individually controlled in the flow rate of the processing gas supplied to each of the plurality of divided nozzle groups. [0009] In order to achieve the above object, the nozzle of the present invention is a rectangular nozzle of a plan view that functions as a metal window of a processing chamber that houses a rectangular substrate of a plan view. When the direction is set to the radial direction and the direction following the outer periphery of the nozzle is set to the circumferential direction, the radial direction and the circumferential direction are divided into a plurality of divided nozzles via an insulating member. Each of the divided nozzles can be individually The processing gas is introduced into the interior of the processing chamber. The nozzle is characterized in that the plurality of divided nozzles are divided into a plurality of divided nozzle groups, and the plurality of divided nozzle groups include: a first divided nozzle group, A second divided nozzle group including the divided nozzles located at a corner of the nozzle head; a second divided nozzle group located outside the nozzle and including the divided nozzles sandwiched by the divided nozzles of the first divided nozzle group; a third divided nozzle group Including the divided heads existing in the center of the head; and a fourth head group including the third head The flow rate of the processing gas supplied to each of the plurality of divided nozzle groups and the divided nozzle groups of the first divided nozzle group or the second divided nozzle group is individually controlled. [0010] In order to achieve the above-mentioned object, the plasma processing apparatus of the present invention is configured to include: a processing chamber that houses a rectangular substrate in a plan view; a high-frequency antenna for generating an inductively coupled plasma; and a rectangular plan view The shower head functions as a metal window of the processing chamber. When the shower head is set in a radial direction from the center of the print head toward the outer periphery, and when the direction following the outer circumference of the print head is set in the circumferential direction, The radial direction and the circumferential direction are divided into a plurality of divided nozzles through an insulating member, and each of the divided nozzles can individually introduce a processing gas into the inside of the processing chamber. The plasma processing apparatus is characterized in that the plurality of The divided nozzle heads are divided into a plurality of divided nozzle head groups. The plurality of divided nozzle head groups include: a first divided nozzle head group including the divided nozzle heads at the corners of the nozzle heads; and a second divided nozzle group located at the aforementioned heads. The outer periphery of the head includes the divided heads sandwiched between the divided heads of the first divided head group; The three-split head group includes the split heads that are located in the center of the head; and the fourth head group includes the split between the third split head group and the first split head group or the second split head group. The head is configured to individually control the flow rate of the processing gas supplied to each of the plurality of divided head groups, and the high-frequency antenna is configured to correspond to each of the plurality of divided head groups. The induced electric field formed in each of the plurality of divided nozzle groups is individually controlled, and the "flow rate of the processing gas supplied to each of the plurality of divided nozzle groups" and "the plurality of divisions" The induced electric field of each of the head groups formed inside the aforementioned processing chamber is controlled independently of each other. [0011] In order to achieve the above object, the showerhead of the present invention is a flat-view-rectangular showerhead that functions as a metal window of a processing chamber that houses a rectangular-shaped substrate in plan view. When the direction is set to the radial direction and the direction following the outer periphery of the nozzle is set to the circumferential direction, the radial direction and the circumferential direction are divided into a plurality of divided nozzles via an insulating member. Each of the divided nozzles can be individually The processing gas is introduced into the interior of the processing chamber. The nozzle is characterized in that the plurality of divided nozzles are divided into a plurality of divided nozzle groups, and the plurality of divided nozzle groups include: a first divided nozzle group, A second divided nozzle group including the divided nozzles located at a corner of the nozzle head; a second divided nozzle group located outside the nozzle and including the divided nozzles sandwiched by the divided nozzles of the first divided nozzle group; a third divided nozzle group Including the divided heads existing in the center of the head; and a fourth head group including the third head The divided nozzle groups and the divided nozzles of the first divided nozzle group or the second divided nozzle group, the flow rate of the processing gas supplied to each of the plurality of divided nozzle groups is individually controlled, and a high-frequency antenna is used. The induction electric field formed inside the processing chamber is configured to correspond to each of the plurality of divided nozzle groups, and each of the induced electric fields formed in the processing chamber is individually controlled, "toward the plurality of divided nozzle groups. The flow rate of each of the aforementioned processing gas supplied "and" the induced electric field of each of the plurality of divided nozzle groups formed in the aforementioned processing chamber "are controlled independently of each other. [Effects of the Invention] 001 [0012] According to the present invention, since the flow rate of the processing gas supplied to each of the plurality of divided nozzle groups is individually controlled, it is possible to individually control the introduction into the processing from each divided nozzle group. The flow of process gas in the chamber. Thereby, the distribution of the processing gas inside the processing chamber can be arbitrarily adjusted. In addition, a circulating current is individually induced toward each of the plurality of divided shower head groups functioning as a metal window, thereby forming an induced electric field inside the processing chamber, whereby the distribution of the induced electric field inside the processing chamber can be arbitrarily adjusted. . That is, since the distribution of the processing gas and the distribution of the induced electric field can be controlled independently within the processing chamber, the etching rate can be individually controlled in various places to correspond to various conditions, so that the substrate can be uniformly applied. Plasma treatment.
[0014] 以下，參照圖面，詳細地說明關於本發明之實施形態。 [0015] 首先，說明關於本發明之第1實施形態｡ [0016] 圖1，係概略地表示作為本發明之第1實施形態之電漿處理裝置之感應耦合電漿處理裝置之構成的剖面圖。 [0017] 圖1所示之感應耦合電漿處理裝置10，係進行在平面視圖矩形之基板例如FPD用玻璃基板上形成薄膜電晶體時之金屬膜、ITO膜、氧化膜等的蝕刻處理或光阻膜之灰化處理等的電漿處理。作為FPD，係符合有液晶顯示器(LCD)、電致發光(Electro Luminescence: EL)顯示器、電漿顯示器面板(PDP)等。 [0018] 感應耦合電漿處理裝置10，係具備有：角筒形狀之氣密的處理容器11，由導電性材料例如內壁面被陽極氧化處理的鋁所構成。處理容器11，係被構成為可分解，並藉由接地線12電性接地。處理容器11，係藉由與該處理容器11絕緣而形成之平面視圖矩形的噴頭13，在圖中上下方向上區隔成天線室14及處理室15。噴頭13，係作為金屬窗而發揮功能，構成處理室15之頂壁。由金屬窗所構成之噴頭13，係例如由非磁性體且導電性之金屬例如鋁或包含鋁的合金而構成。又，為了提升噴頭13之耐電漿性，亦可在噴頭13之處理室15側的表面設置介電質膜或介電質罩。作為介電質膜，係符合有陽極氧化膜、或熔射陶瓷膜。又，作為介電質罩，係符合有由石英或陶瓷所構成的蓋體。 [0019] 在天線室14的側壁14a與處理室15的側壁15a之間，係配置有往處理容器11之內側突出的支撐棚架16。支撐棚架16，係例如由鋁等的金屬而構成。噴頭13，係如後述，經由絕緣構件18被分割成例如24個分割噴頭13a~13x。噴頭13，係經由絕緣構件18被支撐於支撐棚架16。從供給由混合氣體所構成之處理氣體的氣體箱19經由氣體供給管20，將處理氣體供給至分割噴頭13a~13x的每一個，各分割噴頭13a~13x，係從分別形成的氣體吐出孔21將處理氣體導入處理室15之內部(處理空間S)。亦即，各分割噴頭13a~13x，係個別地將處理氣體導入處理空間S。另外，關於處理氣體對各分割噴頭13a~13x之供給形態的詳細內容，係如後述。 [0020] 在噴頭13上之天線室14內，係以面對噴頭13的方式，配置有高頻天線22。高頻天線22，係被配置為藉由以絕緣構件所構成的間隔件(未圖示)而與噴頭13間隔開，並被配置為與後述之第1分割噴頭群~第4分割噴頭群的每一個對應。高頻天線22，係例如如圖2所示，於俯視下被形成為螺旋狀，由多重(四重)天線所構成，各天線線22a~22d之配置區域形成大致框狀，該多重(四重)天線，係構成為每90°偏移旋轉角度的同時，捲繞導電性材料例如由銅等所構成之大致L字狀的4根天線線22a~22d，且使整體呈螺旋狀。另外，高頻天線22之形態，係不限於圖2所示的例子，亦可為使一根或複數個天線線成為環狀的環狀天線。 [0021] 在高頻天線22，係經由供電線24及匹配器25連接有第1高頻電源26。電漿處理的期間，從第1高頻電源26經由供電線24，將例如13.56MHz之高頻電力供給至高頻天線22，藉此，經由作為金屬窗而發揮功能之噴頭13所誘發的循環電流，在處理室15之處理空間S形成感應電場，並藉由所形成之感應電場激發從噴頭13被導入處理空間S的處理氣體，從而在處理室15之處理空間S生成電漿。 [0022] 在處理室15之底壁，係以夾著噴頭13而與高頻天線22對向的方式，經由絕緣構件28固定有用於載置FPD用玻璃基板(以下，僅稱為「基板」。)G之載置台27。載置台27，係由導電性材料例如表面被陽極氧化處理的鋁而構成，載置於載置台27之基板G，係藉由靜電夾具(未圖示)被吸附保持於載置台27。在載置台27之上部周緣部，係配置有絕緣性的遮蔽環29，載置台27之側面，係被絕緣環30覆蓋。在載置台27，係經由處理室15之底壁及絕緣構件28插通有用以搬入搬出基板G的複數個升降銷31。各升降銷31，係藉由被配置於處理容器11之外部的升降機構(未圖示)進行升降驅動，並進行基板G之搬入搬出。又，在處理容器11之外部的下方，係配置有匹配器32及第2高頻電源33，在載置台27，係藉由供電線34，經由匹配器32連接第2高頻電源33。第2高頻電源33，係在電漿處理中，將偏壓用高頻電力例如頻率為3.2MHz的高頻電力供給至載置台27。藉由以該偏壓用高頻電力所生成的自給偏壓，生成於處理室15之內部之電漿中的離子有效地被引入基板G。 [0023] 而且，在載置台27內，係為了控制基板G之溫度，而配置有由加熱器等的加熱手段或冷媒流路等所構成之溫度控制機構與溫度感測器(皆未圖示)。相對於該些機構或構件之配管或配線，係皆通過被配置於處理容器11之底面及絕緣構件28的開口部35，被導出至處理容器11的外部。 [0024] 在處理空間15之側壁15a，係配置有用以搬入搬出基板G的搬入搬出口36及對該搬入搬出口36進行開關的閘閥37。又，在處理室15之底壁，係經由排氣管38連接包含真空泵等的排氣裝置39。藉由排氣裝置39對處理室15之內部進行排氣，在電漿處理中，將處理室15之內部設定、維持為預定的真空氛圍(例如1.33Pa)。又，在被載置於載置台27之基板G的背面側，係形成有極薄的冷卻空間(未圖示)，作為一定壓力之熱傳達用氣體的氦氣從氦氣流路40被供給至冷卻空間。如此一來，藉由將熱傳達用氣體供至基板G之背面側的方式，可在真空下抑制基板G的電漿處理所致之溫度上昇或溫度變化。 [0025] 感應耦合電漿處理裝置10之各構成部，係被連接於由微處理器(電腦)所構成的控制部41而進行控制。又，在控制部41，係連接有由鍵盤或顯示器等所構成的使用者介面42，該鍵盤，係供操作員進行用以管理感應耦合電漿處理裝置10之指令輸入等的輸入操作，該顯示器，係將感應耦合電漿處理裝置10之運轉狀況可視化而顯示。而且，在控制部41，係連接有記憶部43，該記憶部43，係儲存有用以藉由控制部41之控制來實現在感應耦合電漿處理裝置10所執行之各種處理的控制程式，或用以因應處理條件使感應耦合電漿處理裝置10之各構成部執行處理的程式亦即處理配方。特別是，處理配方，係被記憶於記憶部43中的記憶媒體。記憶媒體，係亦可為被內建於電腦之硬碟或半導體記憶體，或亦可為CD-ROM、DVD、快閃記憶體等的可攜式者。又，亦可從其他裝置經由例如專用回線來適當地傳送配方。而且，因應所需，以來自使用者介面42之指示等，從記憶部43任意的處理程式而使控制部41執行，藉此，在控制部41之控制下，進行感應耦合電漿處理裝置10所致之所期望的處理。 [0026] 然而，感應耦合電漿，係「藉由高頻電流流通於高頻天線的方式，在其周圍發生磁場，利用藉由該磁場所誘發的感應電場產生高頻放電，並藉由該高頻放電激發處理氣體而產生」的電漿。在此，當使用金屬窗作為處理室之頂壁時，由於來自高頻天線的磁場不會透過金屬窗，因此，磁場不會到達金屬窗的背面側亦即處理室的內部，在該內部不會產生電漿。 [0027] 在本實施形態中，係對應於此，以絕緣構件18來將作為金屬窗而發揮功能之噴頭13分割成分割噴頭13a~13x，藉此，在各分割噴頭13a~13x中誘發循環電流，在處理室15之處理空間S形成感應電場，並藉由該感應電場激發被導入處理空間S的處理氣體而產生電漿。 [0028] 圖3，係用以說明圖1中之噴頭之分割形態的示意平面圖。 [0029] 在圖3中，在將從噴頭13之中央朝向外周的方向設成為徑方向，且將追隨噴頭13之外周的方向設成為周方向時，噴頭13，係在徑方向及周方向上，經由絕緣構件18被分割成複數個分割噴頭13a~13x。具體而言，噴頭13，係在徑方向上被3分割，進一步，在徑方向被3分割的噴頭13，係隨著從中央朝向外周，在周方向上被4分割、8分割及12分割。亦即，在本實施形態中，噴頭13被分割成24個分割噴頭13a~13x。 [0030] 又，各分割噴頭13a~13x，係被分成4個分割噴頭群。另外，在圖3中，係對相同分割噴頭群所包含之分割噴頭標記相同陰影線。具體而言，各分割噴頭13a~13x，係分成：第1分割噴頭群，由位於噴頭13之角部的8個分割噴頭13o，13p，13r，13s，13u，13v，13x及13m所構成；第2分割噴頭群，位於噴頭13之外周，且由被夾在第1分割噴頭群之各分割噴頭的4個分割噴頭13n，13q，13t，13w所構成；第3分割噴頭群，由存在於噴頭13之中央附近的4個分割噴頭13a~13d所構成；及第4分割噴頭群，由被夾在第3分割噴頭群及第1分割噴頭群或第2分割噴頭群的8個分割噴頭13e~13l所構成。另外，如上述，高頻天線22被配置為與第1分割噴頭群~第4分割噴頭群的每一個對應。 [0031] 圖4，係用以說明圖1的感應耦合電漿處理裝置中之處理氣體朝各分割噴頭之供給形態的示意圖。 [0032] 在圖4中，在感應耦合電漿處理裝置10中，來自氣體箱19之氣體供給管20與第1分割噴頭群~第4分割噴頭群對應地分歧成4個氣體供給支管44~47，氣體供給支管44，係朝第1分割噴頭群供給處理氣體，氣體供給支管45，係朝第2分割噴頭群供給處理氣體，氣體供給支管46，係朝第3分割噴頭群供給處理氣體，氣體供給支管47，係朝第4分割噴頭群供給處理氣體。 [0033] 在感應耦合電漿處理裝置10中，係與各氣體供給支管44~47對應地配置有4個流量比率控制器(Flow Ratio Controller: FRC)48~51，各FRC48~51，係個別地控制流經對應之各氣體供給支管44~47之處理氣體的流量。藉此，可個別地控制從第1分割噴頭群~第4分割噴頭群被導入處理空間S之處理氣體的流量。 [0034] 又，各氣體供給支管44~47在各FRC48~51之下游被分歧，朝各分割噴頭13a~13x個別地供給處理氣體。例如，如圖4所示，氣體供給支管45，係被分歧成4個分歧管45a~45d(氣體流路)，分歧管45a~45d的每一個，係被分別連接於第2分割噴頭群之分割噴頭13n，13q，13t，13w。在氣體供給支管45中，從FRC49經由各分歧管45a~45d至各分割噴頭13n，13q，13t，13w為止之氣體流路的長度被統一，各分歧管45a~45d之剖面面積亦被統一。因此，從FRC49至各分割噴頭13n，13q，13t，13w為止之氣體流路的傳導為相同，處理氣體被均等地分配至各分割噴頭13n，13q，13t，13w。其結果，相同量之處理氣體從各分割噴頭13n，13q，13t，13w被導入處理空間S。 [0035] 又，氣體供給支管44，係被分歧成8個分歧管44a~44h，分歧管44a~44h的每一個，係被分別連接於第1分割噴頭群之分割噴頭13o，13p，13r，13s，13u，13v，13x及13m。即便在氣體供給支管44中，各分歧管44a~44h的長度亦被統一，各分歧管44a~44h之剖面面積亦被統一。因此，相同量之處理氣體亦從各分割噴頭13o，13p，13r，13s，13u，13v，13x及13m被導入處理空間S。 [0036] 而且，氣體供給支管46，係被分歧成4個分歧管46a~46d，分歧管46a~46d的每一個，係被分別連接於第3分割噴頭群之分割噴頭13a~13d。即便在氣體供給支管46中，各分歧管46a~46d的長度亦被統一，各分歧管46a~46d之剖面面積亦被統一。因此，相同量之處理氣體亦從各分割噴頭13a~13d被導入處理空間S。 [0037] 又，氣體供給支管47，係被分歧成8個分歧管47a~47h，分歧管47a~47h的每一個，係被分別連接於第4分割噴頭群之分割噴頭13e~13l。即便在氣體供給支管47中，各分歧管47a~47h的長度亦被統一，各分歧管47a~47h之剖面面積亦被統一。因此，相同量之處理氣體亦從各分割噴頭13e~13l被導入處理空間S。 [0038] 另外，在感應耦合電漿處理裝置10中，係因高頻天線22被配置為與第1分割噴頭群~第4分割噴頭群的每一個對應，因此，亦可因應處理空間S中之被導入與第1分割噴頭群~第4分割噴頭群對向之部分的處理氣體之流量，藉由高頻天線22，控制與第1分割噴頭群~第4分割噴頭群對向之部分的感應電場之強度。 [0039] 根據感應耦合電漿處理裝置10，由於朝第1分割噴頭群~第4分割噴頭群所供給之處理氣體的流量，係個別地被控制，因此，可個別地控制從第1分割噴頭群~第4分割噴頭群被導入處理空間S之處理氣體的流量。藉此，可任意地調整處理空間S之處理氣體的分布。又，朝作為金屬窗而發揮功能之第1分割噴頭群~第4分割噴頭群的每一個個別地誘發循環電流，從而在處理空間S形成感應電場，藉此，可任意地調整處理空間S之感應電場的分布。亦即，由於可在處理空間S中獨立地控制處理氣體的分布與感應電場的分布，因此，為了與各種狀況對應，可在各處個別地控制蝕刻速率，從而，可對基板G施予均勻的電漿處理。 [0040] 具體而言，在感應耦合電漿處理裝置10中，係例如在對被成膜於基板G之鋁(Al)膜進行蝕刻之際，將作為處理氣體的氯氣從各分割噴頭13a~13x導入處理空間S，藉由高頻天線22，在處理空間S形成感應電場，並激發氯氣而產生電漿。在該情況下，由於所生成之電漿與側壁15a接觸而失去活性，因此，使在第1分割噴頭群、第2分割噴頭群所誘發之循環電流比在第3分割噴頭群、第4分割噴頭群所誘發之循環電流增大，從而增強被形成於側壁15a附近的感應電場，該第1分割噴頭群，係由位於噴頭13之角部的分割噴頭13o，13p，13r，13s，13u，13v，13x及13m所構成，該第2分割噴頭群，係由位於噴頭13之外周的分割噴頭13n，13q，13t，13w所構成，該第3分割噴頭群，係由存在於噴頭13之中央附近的分割噴頭13a~13d所構成，該第4分割噴頭群，係由被夾在第3分割噴頭群及第1分割噴頭群或第2分割噴頭群的分割噴頭13e~13l所構成。藉此，使在側壁15a附近所生成之電漿增大，彌補與側壁15a接觸而失去活性的電漿，在處理空間S中，實現感應耦合電漿之均勻的分布(更佳為將所誘發之循環電流的量調整成第3分割噴頭群＜第4分割噴頭群＜第2分割噴頭群＜第1分割噴頭群。)。又，在基板G之周緣部，雖係存在有多數未反應的氯氣，但由於蝕刻對象即鋁膜，係化學反應性高，因此，基板G之周緣部的蝕刻速率因負載效應而變高。為了抑制該負載效應，而使被供給至第1分割噴頭群與第2分割噴頭群之氯氣的量比被供給至第3分割噴頭群與第4分割噴頭群之氯氣的量減少，該第1分割噴頭群，係位於噴頭13之角部，該第2分割噴頭群，係位於噴頭13之外周，該第3分割噴頭群，係存在於噴頭13之中央附近，該第4分割噴頭群，係被夾在第3分割噴頭群及第1分割噴頭群或第2分割噴頭群。(更佳為將所供給之氯氣的量調整成第3分割噴頭群=第4分割噴頭群＞第2分割噴頭群＞第1分割噴頭群。)。 [0041] 又，亦有如下述之情形：在感應耦合電漿處理裝置10中，在對被成膜於基板G之氧化矽(SiO2 )膜進行蝕刻之際，將作為處理氣體之四氟化碳(CF4 )與氧(O2 )的混合氣體從各分割噴頭13a~13x導入處理空間S，藉由高頻天線22，在處理空間S形成感應電場，並激發處理氣體而產生電漿。在該情況下，由於蝕刻對象即氧化矽膜，係矽原子與氧原子之鍵結強且與處理氣體之化學反應性低，因此，負載效應難以發揮。因此，為了抑制負載效應，在處理空間S中，無需使處理氣體偏在，可使在第1分割噴頭群、第2分割噴頭群、第3分割噴頭群、第4分割噴頭群所供給之處理氣體的流量相等，該第1分割噴頭群，係位於噴頭13之角部，該第2分割噴頭群，係位於噴頭13之外周，該第3分割噴頭群，係存在於噴頭13之中央附近，該第4分割噴頭群，係被夾在第3分割噴頭群及第1分割噴頭群或第2分割噴頭群。如此一來，由於第1分割噴頭群~第4分割噴頭群的每一個可個別地控制朝處理空間S供給之處理氣體的流量與形成於處理空間S之感應電場的量，因此，可在處理空間S的各處個別地控制蝕刻速率，從而，可實現對基板G之均勻的電漿處理。 [0042] 又，在感應耦合電漿處理裝置10中，係由於在氣體供給支管45中，從FRC49經由各分歧管45a~45d至第2分割噴頭群之各分割噴頭13n，13q，13t，13w為止之氣體流路的長度被統一，各分歧管45a~45d之剖面面積亦被統一，因此，可統一從FRC49至各分割噴頭13n，13q，13t，13w為止之氣體流路的傳導，並可朝各分割噴頭13n，13q，13t，13w均等地分配處理氣體。藉此，可無需在第2分割噴頭群中，設置用以朝各分割噴頭13n，13q，13t，13w均等地分配處理氣體之FRC，從而，可使感應耦合電漿處理裝置10的構成簡化。另外，即便在第1分割噴頭群、第3分割噴頭群及第4分割噴頭群中，亦可發揮相同的效果。 [0043] 而且，在感應耦合電漿處理裝置10中，係由於與第1分割噴頭群~第4分割噴頭群對應地配置有高頻天線22，因此，可配合處理氣體之分布控制處理空間S之感應電場的強度分布，從而，可詳細地控制處理空間S中之感應耦合電漿的分布。 [0044] 其次，說明關於本發明之第2實施形態。 [0045] 由於第2實施形態，係基本上其構成、作用與上述的第1實施形態相同，因此，關於重複之構成、作用，係省略說明，在下述中，進行關於不同之構成、作用的說明。 [0046] 圖5，係用以說明作為本發明之第2實施形態之電漿處理裝置的感應耦合電漿處理裝置中之噴頭之分割形態的示意平面圖。 [0047] 在圖5中，各分割噴頭13a~13x，係被分成5個分割噴頭群。另外，在圖5中，亦對相同分割噴頭群所包含之分割噴頭標記相同陰影線。具體而言，分成：第1分割噴頭群，由8個分割噴頭13o，13p，13r，13s，13u，13v，13x及13m所構成；第3分割噴頭群，由4個分割噴頭13a~13d所構成；第4分割噴頭群，由8個分割噴頭13e~13l所構成；第5分割噴頭群，位於分割噴頭13之外周，且由沿著分割噴頭13之長邊的2個分割噴頭13n，13t所構成；及第6分割噴頭群，位於分割噴頭13之外周，且由沿著分割噴頭13之短邊的2個分割噴頭13w，13q所構成。另外，在本實施形態中，高頻天線22亦被配置為與第1分割噴頭群、第3分割噴頭群~第6分割噴頭群對應。 [0048] 又，在本實施形態中，來自氣體箱19之氣體供給管20亦與第1分割噴頭群、第3分割噴頭群~第6分割噴頭群對應地分歧成5個氣體供給支管，並與各氣體供給支管對應地配置有5個FRC，各FRC，係個別地控制流經所對應之各氣體供給支管之處理氣體的流量。藉此，可個別地控制從第1分割噴頭群、第3分割噴頭群~第6分割噴頭群被導入處理空間S之處理氣體的流量。 [0049] 又，在各氣體供給支管中，從FRC經由各分歧管至相同分割噴頭群之各分割噴頭為止之氣體流路的長度被統一，各分歧管之剖面面積亦被統一。因此，從FRC至相同分割噴頭群之各分割噴頭為止之氣體流路的傳導為相同，處理氣體被均等地分配至各分割噴頭。其結果，相同量之處理氣體從相同分割噴頭群之各分割噴頭被導入處理空間S。 [0050] 其次，說明關於本發明之第3實施形態。 [0051] 由於第3實施形態，係基本上其構成、作用與上述的第1實施形態相同，因此，關於重複之構成、作用，係省略說明，在下述中，進行關於不同之構成、作用的說明。 [0052] 圖6，係用以說明作為本發明之第3實施形態之電漿處理裝置的感應耦合電漿處理裝置中之噴頭之分割形態的示意平面圖。 [0053] 在圖6中，噴頭13，係在徑方向及周方向上，經由絕緣構件18被分割成複數個分割噴頭13a~13x、52a~52p。具體而言，噴頭13，係在徑方向上被4分割，進一步，在徑方向被4分割的噴頭13，係隨著從中央朝向外周，在周方向上被4分割、8分割、12分割及16分割。亦即，在本實施形態中，噴頭13被分割成40個分割噴頭13a~13x、52a~52p。 [0054] 又，各分割噴頭13a~13x、52a~52p，係被分成6個分割噴頭群。另外，在圖6中，亦對相同分割噴頭群所包含之分割噴頭標記相同陰影線。具體而言，各分割噴頭13a~13x、52a~52p，係分成：第7分割噴頭群，由位於噴頭13之角部的8個分割噴頭52a，52d，52e，52h，52i，52l，52m及52p所構成；第8分割噴頭群，位於噴頭13之外周，且由被夾在第1分割噴頭群之各分割噴頭的8個分割噴頭52b，52c，52f，52g，52j，52k，52n及52o所構成；第3分割噴頭群，由存在於噴頭13之中央附近的4個分割噴頭13a~13d所構成；第4分割噴頭群，由第3分割噴頭群之分割噴頭13a~13d與在徑方向上鄰接的8個分割噴頭13e~13l所構成；第1分割噴頭群，由被夾在第7分割噴頭群及第4分割噴頭群的8個分割噴頭13o，13p，13r，13s，13u，13v，13x及13m所構成；及第2分割噴頭群，由被夾在第8分割噴頭群及第4分割噴頭群的4個分割噴頭13n，13q，13t，13w所構成。另外，在本實施形態中，高頻天線22亦被配置為與第1分割噴頭群~第4分割噴頭群、第7分割噴頭群及第8分割噴頭群對應。 [0055] 又，在本實施形態中，來自氣體箱19之氣體供給管20與第1分割噴頭群~第4分割噴頭群、第7分割噴頭群及第8分割噴頭群對應分歧成6個氣體供給支管，並與各氣體供給支管對應地配置有6個FRC，各FRC，係個別地控制流經所對應之各氣體供給支管之處理氣體的流量。藉此，可個別地控制從第1分割噴頭群~第4分割噴頭群、第7分割噴頭群及第8分割噴頭群被導入處理空間S之處理氣體的流量。 [0056] 又，在各氣體供給支管中，從FRC經由各分歧管至相同分割噴頭群之各分割噴頭為止之氣體流路的長度被統一，各分歧管之剖面面積亦被統一。因此，從FRC至相同分割噴頭群之各分割噴頭為止之氣體流路的傳導為相同，處理氣體被均等地分配至各分割噴頭。其結果，相同量之處理氣體從相同分割噴頭群之各分割噴頭被導入處理空間S。 [0057] 以上，雖使用上述各實施形態說明了關於本發明，但本發明並不限定於上述各實施形態者。[0014] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. [0015] First, a first embodiment of the present invention will be described. [0016] FIG. 1 is a cross-sectional view schematically showing a configuration of an inductively coupled plasma processing apparatus as a plasma processing apparatus according to a first embodiment of the present invention. . [0017] The inductively-coupled plasma processing apparatus 10 shown in FIG. 1 performs an etching process or light treatment of a metal film, an ITO film, an oxide film, or the like when a thin-film transistor is formed on a rectangular substrate such as a glass substrate for FPD in a plan view. Plasma treatment such as ashing treatment of resist film. As the FPD, it conforms to a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), and the like. [0018] The inductively-coupled plasma processing apparatus 10 is provided with an airtight processing container 11 in the shape of a rectangular cylinder, and is composed of a conductive material such as aluminum whose inner wall surface is anodized. The processing container 11 is configured to be decomposable and is electrically grounded through a ground line 12. The processing container 11 is a rectangular shower head 13 in a plan view formed by being insulated from the processing container 11, and is divided into an antenna chamber 14 and a processing chamber 15 in the vertical direction in the figure. The shower head 13 functions as a metal window and constitutes a ceiling wall of the processing chamber 15. The shower head 13 made of a metal window is made of, for example, a non-magnetic and conductive metal such as aluminum or an alloy containing aluminum. In addition, in order to improve the plasma resistance of the shower head 13, a dielectric film or a dielectric cover may be provided on the surface of the processing chamber 15 side of the shower head 13. As the dielectric film, an anodized film or a thermal spray ceramic film is used. The dielectric cover is a cover made of quartz or ceramic. [0019] Between the side wall 14a of the antenna chamber 14 and the side wall 15a of the processing chamber 15, a support shelf 16 protruding toward the inside of the processing container 11 is arranged. The support scaffold 16 is made of metal such as aluminum. The shower head 13 is divided into, for example, 24 divided shower heads 13 a to 13 x via the insulating member 18 as described later. The shower head 13 is supported by a support shelf 16 via an insulating member 18. The processing gas is supplied from a gas tank 19 supplying a processing gas composed of a mixed gas to each of the divided nozzles 13a to 13x through a gas supply pipe 20. Each of the divided nozzles 13a to 13x is formed from a gas discharge hole 21 formed separately. The processing gas is introduced into the processing chamber 15 (processing space S). That is, each of the divided shower heads 13a to 13x individually introduces a processing gas into the processing space S. The details of the supply mode of the processing gas to each of the divided heads 13a to 13x will be described later. [0020] A high-frequency antenna 22 is disposed in the antenna chamber 14 on the shower head 13 so as to face the shower head 13. The high-frequency antenna 22 is arranged to be spaced apart from the shower head 13 by a spacer (not shown) made of an insulating member, and is arranged to be separated from the first divided shower head group to the fourth divided shower head group described later. Each one corresponds. The high-frequency antenna 22 is, for example, as shown in FIG. 2, formed into a spiral shape in a plan view, and is composed of multiple (quadruple) antennas. The arrangement areas of the antenna lines 22 a to 22 d are formed in a substantially frame shape. (F) The antenna is structured such that four antenna wires 22a to 22d of a substantially L shape made of conductive material such as copper are wound while the rotation angle is shifted every 90 °, and the whole is spiral. The form of the high-frequency antenna 22 is not limited to the example shown in FIG. 2, and may be a loop antenna in which one or a plurality of antenna lines are looped. [0021] The high-frequency antenna 22 is connected to a first high-frequency power source 26 via a power supply line 24 and a matching device 25. During the plasma processing, high-frequency power, for example, 13.56 MHz is supplied from the first high-frequency power source 26 to the high-frequency antenna 22 through the power supply line 24, thereby circulating through the shower head 13 functioning as a metal window. The electric current forms an induced electric field in the processing space S of the processing chamber 15 and excites the processing gas introduced into the processing space S from the shower head 13 by the formed induced electric field, thereby generating plasma in the processing space S of the processing chamber 15. [0022] On the bottom wall of the processing chamber 15, a glass substrate for FPD (hereinafter, simply referred to as a “substrate”) is fixed via an insulating member 28 so as to face the high-frequency antenna 22 with the shower head 13 interposed therebetween. .) G's mounting table 27. The mounting table 27 is made of a conductive material such as aluminum whose surface is anodized, and the substrate G mounted on the mounting table 27 is held and held on the mounting table 27 by an electrostatic clamp (not shown). An insulating shielding ring 29 is disposed on the peripheral edge portion of the upper portion of the mounting table 27, and the side surface of the mounting table 27 is covered with the insulating ring 30. A plurality of lift pins 31 for carrying in and out the substrate G are inserted into the mounting table 27 through the bottom wall of the processing chamber 15 and the insulating member 28. Each of the lifting pins 31 is driven by a lifting mechanism (not shown) arranged outside the processing container 11 to carry in and out the substrate G. A matching device 32 and a second high-frequency power supply 33 are arranged below the processing container 11, and a second high-frequency power supply 33 is connected to the mounting table 27 via a power supply line 34 via the matching device 32. The second high-frequency power source 33 supplies high-frequency power for bias voltage, for example, high-frequency power having a frequency of 3.2 MHz, to the mounting table 27 during plasma processing. By the self-supplied bias generated by the bias high-frequency power, ions generated in the plasma inside the processing chamber 15 are efficiently introduced into the substrate G. [0023] In the mounting table 27, in order to control the temperature of the substrate G, a temperature control mechanism including a heating means such as a heater or a refrigerant flow path, and a temperature sensor (not shown) ). The piping or wiring of these mechanisms or components is led out to the outside of the processing container 11 through the opening 35 arranged on the bottom surface of the processing container 11 and the insulating member 28. [0024] A side wall 15a of the processing space 15 is provided with a loading / unloading port 36 for loading and unloading the substrate G and a gate valve 37 for opening and closing the loading / unloading port 36. An exhaust device 39 including a vacuum pump and the like is connected to the bottom wall of the processing chamber 15 via an exhaust pipe 38. The inside of the processing chamber 15 is evacuated by the exhaust device 39, and the inside of the processing chamber 15 is set and maintained at a predetermined vacuum atmosphere (for example, 1.33 Pa) during the plasma processing. In addition, an extremely thin cooling space (not shown) is formed on the back side of the substrate G placed on the mounting table 27, and helium gas, which is a heat transfer gas at a constant pressure, is supplied from the helium gas flow path 40 to Cooling space. In this way, by supplying the heat transfer gas to the back surface side of the substrate G, it is possible to suppress a temperature increase or a temperature change caused by the plasma processing of the substrate G under vacuum. [0025] Each component of the inductively coupled plasma processing apparatus 10 is controlled by being connected to a control unit 41 composed of a microprocessor (computer). The control unit 41 is connected to a user interface 42 composed of a keyboard, a display, and the like. The keyboard is used by an operator to perform input operations such as command input for managing the inductively coupled plasma processing apparatus 10. The display visualizes and displays the operation status of the inductively coupled plasma processing apparatus 10. Further, the control unit 41 is connected with a memory unit 43 which stores a control program for realizing various processes executed by the inductively coupled plasma processing apparatus 10 under the control of the control unit 41, or A program for processing each component of the inductively coupled plasma processing apparatus 10 according to processing conditions, that is, a processing recipe. In particular, the processing recipe is a storage medium stored in the storage unit 43. The storage medium can also be a hard disk or semiconductor memory built into the computer, or it can be a portable device such as CD-ROM, DVD, and flash memory. In addition, the recipe may be appropriately transmitted from another device via, for example, a dedicated loop. In addition, as needed, the control unit 41 is executed by an arbitrary processing program from the memory unit 43 with an instruction from the user interface 42 or the like, thereby inductively coupling the plasma processing apparatus 10 under the control of the control unit 41. Caused by the desired treatment. [0026] However, the inductively coupled plasma is a method in which a high-frequency current flows through a high-frequency antenna, a magnetic field is generated around it, a high-frequency discharge is generated by using an induced electric field induced by the magnetic field, and The high-frequency discharge excites the processing gas and generates a plasma. Here, when a metal window is used as the top wall of the processing chamber, since the magnetic field from the high-frequency antenna does not pass through the metal window, the magnetic field does not reach the back side of the metal window, that is, the inside of the processing chamber. Will generate plasma. [0027] In this embodiment, the nozzle 13 functioning as a metal window is divided into the divided nozzles 13a to 13x by the insulating member 18, thereby inducing a cycle in each of the divided nozzles 13a to 13x. The electric current forms an induced electric field in the processing space S of the processing chamber 15, and the induced electric field excites the processing gas introduced into the processing space S to generate a plasma. [0028] FIG. 3 is a schematic plan view for explaining a division form of the showerhead in FIG. 1. [0029] In FIG. 3, when the direction from the center of the shower head 13 toward the outer periphery is set as the radial direction, and the direction following the outer circumference of the shower head 13 is set as the circumferential direction, the shower head 13 is in the radial direction and the circumferential direction. , Is divided into a plurality of divided shower heads 13 a to 13 x via the insulating member 18. Specifically, the nozzle head 13 is divided into three in the radial direction, and the nozzle head 13 divided into three in the radial direction is divided into four, eight, and twelve in the circumferential direction as it goes from the center to the outer periphery. That is, in this embodiment, the head 13 is divided into 24 divided heads 13a to 13x. [0030] Each of the divided heads 13a to 13x is divided into four divided head groups. In addition, in FIG. 3, the divisional heads included in the same divisional head group are marked with the same hatching. Specifically, each of the divided heads 13a to 13x is divided into: a first divided head group consisting of eight divided heads 13o, 13p, 13r, 13s, 13u, 13v, 13x, and 13m located at the corner of the head 13; The second divided nozzle group is located on the outer periphery of the nozzle head 13 and is composed of four divided nozzles 13n, 13q, 13t, and 13w sandwiched by the divided nozzles of the first divided nozzle group. The third divided nozzle group is composed of It consists of four divided nozzles 13a to 13d near the center of the nozzle head 13; and a fourth divided nozzle group consisting of eight divided nozzles 13e sandwiched between the third divided nozzle group and the first divided nozzle group or the second divided nozzle group ~ 13l. In addition, as described above, the high-frequency antenna 22 is disposed so as to correspond to each of the first divided nozzle group to the fourth divided nozzle group. [0031] FIG. 4 is a schematic diagram for explaining a supply form of a processing gas to each of the divided nozzles in the inductively coupled plasma processing apparatus of FIG. 1. [0032] In FIG. 4, in the inductively coupled plasma processing apparatus 10, the gas supply pipe 20 from the gas tank 19 is branched into four gas supply branch pipes 44 to the first divided nozzle group to the fourth divided nozzle group. 47. The gas supply branch pipe 44 supplies the processing gas to the first divided shower head group, the gas supply branch pipe 45 supplies the processing gas to the second divided shower head group, and the gas supply branch pipe 46 supplies the processing gas to the third divided shower head group. The gas supply branch pipe 47 supplies a processing gas to the fourth divided shower head group. [0033] In the inductively coupled plasma processing apparatus 10, four flow ratio controllers (FRC) 48 to 51 are arranged corresponding to each of the gas supply branch pipes 44 to 47, and each FRC 48 to 51 is an individual system. The flow rate of the processing gas flowing through the corresponding gas supply branch pipes 44 to 47 is controlled in a controlled manner. Thereby, it is possible to individually control the flow rate of the processing gas introduced into the processing space S from the first divided nozzle group to the fourth divided nozzle group. [0034] Each of the gas supply branch pipes 44 to 47 is branched downstream of each of the FRC 48 to 51, and supplies the processing gas to each of the divided shower heads 13a to 13x individually. For example, as shown in FIG. 4, the gas supply branch pipe 45 is branched into four branch pipes 45a to 45d (gas flow paths), and each of the branch pipes 45a to 45d is connected to each of the second divided shower head groups. Split nozzles 13n, 13q, 13t, 13w. In the gas supply branch pipe 45, the lengths of the gas flow paths from the FRC 49 through the branch pipes 45a to 45d to the divided nozzles 13n, 13q, 13t, and 13w are unified, and the sectional areas of the branch pipes 45a to 45d are also unified. Therefore, the conduction of the gas flow path from FRC49 to each of the divided nozzles 13n, 13q, 13t, and 13w is the same, and the processing gas is evenly distributed to each of the divided nozzles 13n, 13q, 13t, and 13w. As a result, the same amount of processing gas is introduced into the processing space S from each of the divided nozzles 13n, 13q, 13t, and 13w. [0035] The gas supply branch pipe 44 is divided into eight branch pipes 44a to 44h, and each of the branch pipes 44a to 44h is separately connected to the divided nozzles 13o, 13p, and 13r of the first divided nozzle group. 13s, 13u, 13v, 13x and 13m. Even in the gas supply branch pipe 44, the lengths of the branch pipes 44a to 44h are unified, and the cross-sectional areas of the branch pipes 44a to 44h are also unified. Therefore, the same amount of processing gas is also introduced into the processing space S from each of the divided nozzles 13o, 13p, 13r, 13s, 13u, 13v, 13x, and 13m. [0036] The gas supply branch pipe 46 is branched into four branch pipes 46a to 46d, and each of the branch pipes 46a to 46d is connected to the divided nozzles 13a to 13d of the third divided nozzle group, respectively. Even in the gas supply branch pipe 46, the lengths of the branch pipes 46a to 46d are unified, and the cross-sectional areas of the branch pipes 46a to 46d are also unified. Therefore, the same amount of processing gas is also introduced into the processing space S from each of the divided nozzles 13a to 13d. [0037] The gas supply branch pipe 47 is divided into eight branch pipes 47a to 47h, and each of the branch pipes 47a to 47h is connected to the divided nozzles 13e to 13l of the fourth divided nozzle group, respectively. Even in the gas supply branch pipe 47, the lengths of the branch pipes 47a to 47h are unified, and the cross-sectional areas of the branch pipes 47a to 47h are also unified. Therefore, the same amount of processing gas is also introduced into the processing space S from each of the divided nozzles 13e to 13l. [0038] In the inductively coupled plasma processing apparatus 10, since the high-frequency antenna 22 is arranged to correspond to each of the first divided nozzle group to the fourth divided nozzle group, it is possible to respond to the processing space S. The flow rate of the processing gas introduced into the portion facing the first divided nozzle group to the fourth divided nozzle group is controlled by the high-frequency antenna 22 to the portion facing the first divided nozzle group to the fourth divided nozzle group. The strength of the induced electric field. [0039] According to the inductively coupled plasma processing apparatus 10, since the flow rates of the processing gas supplied to the first divided nozzle group to the fourth divided nozzle group are individually controlled, the first divided nozzles can be individually controlled. Group-The fourth divided shower head group is introduced into the processing gas flow rate of the processing space S. Thereby, the distribution of the processing gas in the processing space S can be arbitrarily adjusted. In addition, a circulating current is individually induced toward each of the first divided print head group to the fourth divided print head group functioning as a metal window, thereby forming an induced electric field in the processing space S, whereby the processing space S can be arbitrarily adjusted. The distribution of the induced electric field. That is, since the distribution of the processing gas and the distribution of the induced electric field can be independently controlled in the processing space S, the etching rate can be individually controlled everywhere in accordance with various conditions, so that the substrate G can be uniformly applied. Plasma treatment. [0040] Specifically, in the inductively-coupled plasma processing apparatus 10, for example, when etching an aluminum (Al) film formed on the substrate G, chlorine gas as a processing gas is passed from each of the divided nozzles 13a to 13a. 13x is introduced into the processing space S, and an induction electric field is formed in the processing space S by the high-frequency antenna 22, and chlorine gas is excited to generate a plasma. In this case, since the generated plasma comes into contact with the side wall 15a and becomes inactive, the circulating current induced in the first divided nozzle group and the second divided nozzle group is set to be higher than that in the third divided nozzle group and the fourth divided nozzle group. The circulating current induced by the shower head group increases, thereby increasing the induced electric field formed near the side wall 15a. The first split shower head group is formed by the split shower heads 13o, 13p, 13r, 13s, 13u located at the corners of the shower head 13. 13v, 13x, and 13m. The second divided nozzle group is composed of divided nozzles 13n, 13q, 13t, and 13w located on the outer periphery of the nozzle 13. The third divided nozzle group is located in the center of the nozzle 13. The fourth divided head group is formed by the nearby divided heads 13a to 13d. The fourth divided head group is composed of the divided heads 13e to 13l sandwiched between the third divided head group and the first divided head group or the second divided head group. As a result, the plasma generated in the vicinity of the side wall 15a is increased to compensate for the inactivation of the plasma in contact with the side wall 15a. In the processing space S, a uniform distribution of the inductively coupled plasma is achieved (more preferably, the induced The amount of circulating current is adjusted so that the third divided head group <the fourth divided head group <the second divided head group <the first divided head group.). In addition, although a large amount of unreacted chlorine gas is present in the peripheral portion of the substrate G, since the aluminum film, which is an etching target, is highly chemically reactive, the etching rate of the peripheral portion of the substrate G is increased due to the load effect. In order to suppress this load effect, the amount of chlorine gas supplied to the first divided nozzle group and the second divided nozzle group is reduced compared to the amount of chlorine gas supplied to the third divided nozzle group and the fourth divided nozzle group. The divided nozzle group is located at the corner of the nozzle head 13, the second divided nozzle group is located outside the nozzle 13, the third divided nozzle group is located near the center of the nozzle 13, and the fourth divided nozzle group is It is sandwiched between the third divided print head group and the first divided print head group or the second divided print head group. (More preferably, the amount of chlorine gas to be supplied is adjusted to the third divided nozzle group = the fourth divided nozzle group> the second divided nozzle group> the first divided nozzle group.). [0041] There is also a case where, in the inductively coupled plasma processing apparatus 10, when etching a silicon oxide (SiO 2 ) film formed on the substrate G, tetrafluoro is used as a processing gas. A mixed gas of carbonized carbon (CF 4 ) and oxygen (O 2 ) is introduced into the processing space S from each of the divided nozzles 13 a to 13 x, and an induction electric field is formed in the processing space S by the high-frequency antenna 22, and the processing gas is excited to generate a plasma. . In this case, since the silicon oxide film, which is the object of etching, has strong bonding between silicon atoms and oxygen atoms and has low chemical reactivity with the processing gas, it is difficult to exert a load effect. Therefore, in order to suppress the load effect, it is not necessary to bias the processing gas in the processing space S. The processing gas supplied in the first divided nozzle group, the second divided nozzle group, the third divided nozzle group, and the fourth divided nozzle group can be used. The first divided nozzle group is located at the corner of the nozzle 13; the second divided nozzle group is located at the outer periphery of the nozzle 13; the third divided nozzle group is located near the center of the nozzle 13; The fourth divided print head group is sandwiched between the third divided print head group and the first divided print head group or the second divided print head group. In this way, each of the first divided nozzle group to the fourth divided nozzle group can individually control the flow rate of the processing gas supplied to the processing space S and the amount of the induced electric field formed in the processing space S. The etching rate is individually controlled in each of the spaces S, so that uniform plasma processing of the substrate G can be achieved. [0042] In the inductively coupled plasma processing apparatus 10, the gas supply branch pipe 45 passes from the FRC 49 through the branch pipes 45a to 45d to the divided nozzles 13n, 13q, 13t, and 13w of the second divided nozzle group. The lengths of the gas flow paths up to now are unified, and the cross-sectional areas of the branch pipes 45a to 45d are also unified. Therefore, the conduction of the gas flow paths from FRC49 to the divided nozzles 13n, 13q, 13t, and 13w can be unified, and The processing gas is evenly distributed to the divided shower heads 13n, 13q, 13t, and 13w. Thereby, it is not necessary to provide FRC for distributing the processing gas equally to each of the divided heads 13n, 13q, 13t, and 13w in the second divided head group, so that the configuration of the inductively coupled plasma processing apparatus 10 can be simplified. In addition, the same effect can be exhibited even in the first divided head group, the third divided head group, and the fourth divided head group. [0043] In the inductively coupled plasma processing apparatus 10, since the high-frequency antenna 22 is arranged corresponding to the first divided nozzle group to the fourth divided nozzle group, the processing space S can be controlled in accordance with the distribution of the processing gas. The intensity distribution of the induced electric field can be used to control the distribution of the inductively coupled plasma in the processing space S in detail. [0044] Next, a second embodiment of the present invention will be described. [0045] Since the second embodiment basically has the same structure and function as those of the first embodiment described above, the redundant structure and function will not be described. In the following description, the different structures and functions will be described. Instructions. [0046] FIG. 5 is a schematic plan view for explaining a divided form of a nozzle in an inductively coupled plasma processing apparatus of a plasma processing apparatus according to a second embodiment of the present invention. [0047] In FIG. 5, each of the divided heads 13a to 13x is divided into five divided head groups. In addition, in FIG. 5, the divisional heads included in the same divisional head group are also marked with the same hatching. Specifically, it is divided into: a first divided nozzle group consisting of eight divided nozzles 13o, 13p, 13r, 13s, 13u, 13v, 13x, and 13m; a third divided nozzle group consisting of four divided nozzles 13a to 13d Composition: The fourth divided nozzle group is composed of eight divided nozzles 13e to 13l; the fifth divided nozzle group is located outside the divided nozzle 13 and is composed of two divided nozzles 13n, 13t along the long side of the divided nozzle 13 And a sixth divided head group, which is located on the outer periphery of the divided head 13 and is composed of two divided heads 13w and 13q along the short sides of the divided head 13. In addition, in this embodiment, the high-frequency antenna 22 is also arranged so as to correspond to the first divided nozzle group, the third divided nozzle group to the sixth divided nozzle group. [0048] In this embodiment, the gas supply pipe 20 from the gas tank 19 also branches into five gas supply branch pipes corresponding to the first divided nozzle group, the third divided nozzle group to the sixth divided nozzle group, and Five FRCs are arranged corresponding to each gas supply branch pipe, and each FRC individually controls the flow rate of the process gas flowing through the corresponding gas supply branch pipe. Thereby, it is possible to individually control the flow rate of the processing gas introduced into the processing space S from the first divided head group, the third divided head group to the sixth divided head group. [0049] In each gas supply branch pipe, the lengths of the gas flow paths from the FRC through the branch pipes to the divided nozzles of the same divided nozzle group are unified, and the cross-sectional areas of the divided pipes are also unified. Therefore, the conduction of the gas flow path from the FRC to each of the divided heads of the same divided head group is the same, and the processing gas is equally distributed to the divided heads. As a result, the same amount of processing gas is introduced into the processing space S from each of the divided heads of the same divided head group. [0050] Next, a third embodiment of the present invention will be described. [0051] Since the third embodiment basically has the same structure and function as those of the first embodiment described above, the description of the repeated structure and function will be omitted. In the following description, different structures and functions will be described. Instructions. [0052] FIG. 6 is a schematic plan view for explaining a split form of a nozzle in an inductively coupled plasma processing apparatus as a plasma processing apparatus according to a third embodiment of the present invention. [0053] In FIG. 6, the shower head 13 is divided into a plurality of divided shower heads 13 a to 13 x and 52 a to 52 p in a radial direction and a circumferential direction via an insulating member 18. Specifically, the nozzle head 13 is divided into four in the radial direction, and the nozzle head 13 divided into four in the radial direction is divided into four, eight, and twelve in the circumferential direction as it goes from the center to the outer periphery. 16 divisions. That is, in this embodiment, the head 13 is divided into 40 divided heads 13a to 13x and 52a to 52p. [0054] Each of the divided heads 13a to 13x and 52a to 52p is divided into six divided head groups. In addition, in FIG. 6, the divisional heads included in the same divisional head group are also marked with the same hatching. Specifically, each of the divided heads 13a to 13x and 52a to 52p is divided into: a seventh divided head group consisting of eight divided heads 52a, 52d, 52e, 52h, 52i, 52l, 52m and It is composed of 52p; the 8th divided nozzle group is located outside the head 13 and is composed of 8 divided nozzles 52b, 52c, 52f, 52g, 52j, 52k, 52n, and 52o sandwiched by the divided nozzles of the first divided nozzle group. Structure; the third divided nozzle group is composed of four divided nozzles 13a to 13d existing near the center of the nozzle 13; the fourth divided nozzle group is composed of the divided nozzles 13a to 13d of the third divided nozzle group and the radial direction It consists of 8 adjacent divided nozzles 13e ~ 13l. The first divided nozzle group consists of 8 divided nozzles 13o, 13p, 13r, 13s, 13u, 13v sandwiched between the 7th divided nozzle group and the 4th divided nozzle group. , 13x and 13m; and the second divided nozzle group, which is composed of four divided nozzles 13n, 13q, 13t, and 13w sandwiched between the eighth divided nozzle group and the fourth divided nozzle group. In addition, in this embodiment, the high-frequency antenna 22 is also arranged to correspond to the first divided print head group to the fourth divided print head group, the seventh divided print head group, and the eighth divided print head group. [0055] In this embodiment, the gas supply pipe 20 from the gas tank 19 is divided into six gases corresponding to the first divided nozzle group to the fourth divided nozzle group, the seventh divided nozzle group, and the eighth divided nozzle group. The supply branch pipes are provided with six FRCs corresponding to the respective gas supply branch pipes. Each FRC individually controls the flow rate of the process gas flowing through the corresponding gas supply branch pipes. Thereby, the flow rate of the processing gas introduced into the processing space S from the first divided nozzle group to the fourth divided nozzle group, the seventh divided nozzle group, and the eighth divided nozzle group can be individually controlled. [0056] In each gas supply branch pipe, the lengths of the gas flow paths from the FRC through the branch pipes to the divided nozzles of the same divided nozzle group are unified, and the cross-sectional areas of the divided pipes are also unified. Therefore, the conduction of the gas flow path from the FRC to each of the divided heads of the same divided head group is the same, and the processing gas is evenly distributed to the divided heads. As a result, the same amount of processing gas is introduced into the processing space S from each of the divided heads of the same divided head group. [0057] Although the present invention has been described using the above embodiments, the present invention is not limited to the above embodiments.
[0058][0058]
G‧‧‧基板G‧‧‧ substrate
10‧‧‧感應耦合電漿處理裝置10‧‧‧ Inductively coupled plasma processing device
11‧‧‧處理容器11‧‧‧handling container
13‧‧‧噴頭13‧‧‧Nozzle
13a~13x，52a~52p‧‧‧分割噴頭13a ~ 13x, 52a ~ 52p‧‧‧Split nozzle
15‧‧‧處理室15‧‧‧treatment room
18‧‧‧絕緣構件18‧‧‧ insulating members
20‧‧‧氣體供給管20‧‧‧Gas supply pipe
22‧‧‧高頻天線22‧‧‧HF Antenna
44~47‧‧‧氣體供給支管44 ~ 47‧‧‧ gas supply branch pipe
48~51‧‧‧FRC48 ~ 51‧‧‧FRC
44a~44h，45a~45d，46a~46d，47a~47h‧‧‧分歧管44a ~ 44h, 45a ~ 45d, 46a ~ 46d, 47a ~ 47h
[0013] [圖1]概略地表示作為本發明之第1實施形態之電漿處理裝置之感應耦合電漿處理裝置之構成的剖面圖。 [圖2]概略地表示圖1中之高頻天線之構成的平面圖。 [圖3]用以說明圖1中之噴頭之分割形態的示意平面圖。 [圖4]用以說明圖1的感應耦合電漿處理裝置中之處理氣體朝各分割噴頭之供給形態的示意圖。 [圖5]用以說明作為本發明之第2實施形態之電漿處理裝置的感應耦合電漿處理裝置中之噴頭之分割形態的示意平面圖。 [圖6]用以說明作為本發明之第3實施形態之電漿處理裝置的感應耦合電漿處理裝置中之噴頭之分割形態的示意平面圖。[0013] [FIG. 1] A cross-sectional view schematically showing a configuration of an inductively coupled plasma processing apparatus as a plasma processing apparatus according to a first embodiment of the present invention. [Fig. 2] A plan view schematically showing the configuration of the high-frequency antenna in Fig. 1. [Fig. [Fig. 3] A schematic plan view for explaining the division form of the nozzle in Fig. 1. [Fig. [Fig. 4] A schematic diagram for explaining a supply form of the processing gas to each of the divided nozzles in the inductively coupled plasma processing apparatus of Fig. 1. [FIG. 5] A schematic plan view for explaining a split form of a nozzle in an inductively coupled plasma processing apparatus as a plasma processing apparatus according to a second embodiment of the present invention. [FIG. 6] A schematic plan view for explaining a split form of a nozzle in an inductively coupled plasma processing apparatus as a plasma processing apparatus according to a third embodiment of the present invention.
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| JP2016230545A JP6851188B2 (en) | 2016-11-28 | 2016-11-28 | Plasma processing equipment and shower head |
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| CN114093739B (en) * | 2020-08-24 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | Gas flow regulating device and regulating method and plasma processing device |
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| JP3360265B2 (en) * | 1996-04-26 | 2002-12-24 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing apparatus |
| JP4826483B2 (en) * | 2007-01-19 | 2011-11-30 | 東京エレクトロン株式会社 | Plasma processing equipment |
| KR101253296B1 (en) * | 2011-02-24 | 2013-04-10 | 엘아이지에이디피 주식회사 | Plasma Processing Apparatus |
| JP5727281B2 (en) * | 2011-04-21 | 2015-06-03 | 東京エレクトロン株式会社 | Inductively coupled plasma processing equipment |
| JP2013105664A (en) * | 2011-11-15 | 2013-05-30 | Tokyo Electron Ltd | High frequency antenna circuit and inductively coupled plasma treatment apparatus |
| JP6157061B2 (en) * | 2012-05-11 | 2017-07-05 | 東京エレクトロン株式会社 | Gas supply apparatus and substrate processing apparatus |
| JP6030994B2 (en) * | 2013-05-15 | 2016-11-24 | 東京エレクトロン株式会社 | Plasma etching apparatus and plasma etching method |
| JP6228400B2 (en) * | 2013-07-16 | 2017-11-08 | 東京エレクトロン株式会社 | Inductively coupled plasma processing equipment |
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2016
- 2016-11-28 JP JP2016230545A patent/JP6851188B2/en active Active
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2017
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| Publication number | Publication date |
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| KR20180061029A (en) | 2018-06-07 |
| CN108122726A (en) | 2018-06-05 |
| JP2018088336A (en) | 2018-06-07 |
| CN108122726B (en) | 2020-03-03 |
| KR102000363B1 (en) | 2019-07-15 |
| JP6851188B2 (en) | 2021-03-31 |
| TWI751224B (en) | 2022-01-01 |
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