CN108122726B - Plasma processing apparatus and showerhead - Google Patents
Plasma processing apparatus and showerhead Download PDFInfo
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- CN108122726B CN108122726B CN201711212072.2A CN201711212072A CN108122726B CN 108122726 B CN108122726 B CN 108122726B CN 201711212072 A CN201711212072 A CN 201711212072A CN 108122726 B CN108122726 B CN 108122726B
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Abstract
The invention provides a plasma processing apparatus and a shower head capable of performing uniform plasma processing on a substrate. The 24 divided heads (13 a-13 x) divided from the head (13) are divided into: a first divided head group composed of divided heads (13o, 13p, 13r, 13s, 13u, 13v, 13x, and 13m) located at corners; a second divided head group composed of divided heads (13n, 13q, 13t, 13w) located on the outer periphery; a third divided head group consisting of divided heads (13 a-13 d) located near the center; and a fourth divided shower head group including the third divided shower head group and the divided shower heads 13e to 13l sandwiched between the first divided shower head group or the second divided shower head group, wherein the flow rates of the process gases supplied to the respective divided shower head groups can be independently controlled.
Description
Technical Field
The present invention relates to a plasma processing apparatus having a plurality of divided showerheads and a showerhead.
Background
In a process of manufacturing a Flat Panel Display (FPD) such as a Liquid Crystal Display (LCD), a glass substrate having a rectangular shape in a plan view is subjected to plasma processing such as etching and film formation. In order to perform the plasma processing, various plasma processing apparatuses such as a plasma etching apparatus and a plasma CVD apparatus are used. As the plasma processing apparatus, an Inductively Coupled Plasma (ICP) processing apparatus capable of obtaining high-density plasma in a high vacuum degree is suitably used.
In a conventional inductively coupled plasma processing apparatus, a dielectric window having a rectangular shape in plan view corresponding to a glass substrate is disposed between a high-frequency antenna and a processing chamber, and an inductively coupled plasma is generated from a processing gas inside the processing chamber by transmitting a magnetic field from the high-frequency antenna to which high-frequency power is supplied through a metal window. However, in recent years, FPDs have been developed in generations, and glass substrates have been increased in size, and, for example, a glass substrate of about 2800mm × about 3000mm is subjected to plasma processing. The dielectric window is also increased in size, but the dielectric material such as quartz constituting the dielectric window is brittle, and therefore, the size increase is not suitable.
Therefore, there is provided an inductively coupled plasma processing apparatus in which a metal window formed of a metal of a ductile material and having a rectangular shape in a plan view is used as a ceiling portion of a processing chamber instead of a dielectric window, the metal window is divided by an insulating member serving as a spacer, a loop current is induced in each portion of the divided metal window to form an induced electric field in the processing chamber, and plasma is generated by the induced electric field (for example, see patent document 1).
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open No. 2012 and 227427
Disclosure of Invention
Technical problem to be solved by the invention
However, when the size of the processing chamber is increased in accordance with the increase in the size of the glass substrate, it is difficult to perform uniform plasma processing on the glass substrate due to various factors.
The invention aims to provide a plasma processing apparatus and a shower head capable of performing uniform plasma processing on a substrate.
Technical solution for solving technical problem
In order to achieve the above object, a plasma processing apparatus according to the present invention includes: the plasma processing apparatus includes a processing chamber for accommodating a substrate having a rectangular shape in a plan view, a high-frequency antenna for generating inductively coupled plasma, and a showerhead having a rectangular shape in a plan view, which operates as a metal window of the processing chamber, and is configured such that, when a direction from a center of the showerhead toward an outer periphery is a radial direction and a direction around the outer periphery of the showerhead is a circumferential direction, the showerhead is divided into a plurality of divided showerheads by an insulating member with respect to the radial direction and the circumferential direction, and each of the divided showerheads is capable of independently introducing a processing gas into the processing chamber; in the plasma processing apparatus, the plurality of divided nozzles are divided into a plurality of divided nozzle groups; the plurality of divided nozzle groups include: a first divided showerhead group including the divided showerheads located at corners of the showerhead; a second divided head group including the divided heads, the divided heads being located at an outer periphery of the heads and sandwiched by the divided heads of the first divided head group; a third divided head group including the divided heads existing at the center of the heads; and a fourth divided showerhead group including the divided showerhead, the divided showerhead being sandwiched by the third divided showerhead group and the first divided showerhead group or the second divided showerhead group, and flow rates of the process gas supplied to the respective divided showerhead groups being independently controlled.
In order to achieve the above object, a showerhead of the present invention is a showerhead that operates as a metal window of a processing chamber that houses a substrate having a rectangular shape in plan view, the showerhead including: the spray head is composed of: when a direction from a center to an outer periphery of the showerhead is a radial direction and a direction around the outer periphery of the showerhead is a circumferential direction, the showerhead is divided into a plurality of divided showerheads by an insulating member in the radial direction and the circumferential direction, and the divided showerheads are capable of independently introducing a process gas into the processing chamber; in the spray head, the plurality of divided spray heads are divided into a plurality of divided spray head groups; the plurality of divided nozzle groups include: a first divided showerhead group including the divided showerheads located at corners of the showerhead; a second divided head group including the divided heads, the divided heads being located at an outer periphery of the heads and sandwiched by the divided heads of the first divided head group; a third divided head group including the divided heads existing at the center of the heads; and a fourth divided showerhead group including the divided showerhead, the divided showerhead being sandwiched by the third divided showerhead group and the first divided showerhead group or the second divided showerhead group, and flow rates of the process gas supplied to the respective divided showerhead groups being independently controlled.
In order to achieve the above object, a plasma processing apparatus according to the present invention includes: the plasma processing apparatus is configured to: a shower head which is rectangular in a plan view and includes a processing chamber for housing a substrate having a rectangular shape in a plan view, a high-frequency antenna for generating inductively coupled plasma, and a metal window serving as the processing chamber, wherein when a direction from a center of the shower head to an outer periphery is a radial direction and a direction around the outer periphery of the shower head is a circumferential direction, the shower head is divided into a plurality of divided shower heads by an insulating member with respect to the radial direction and the circumferential direction, and a processing gas can be independently introduced into the processing chamber by each of the divided shower heads; in the plasma processing apparatus, the plurality of divided nozzles are divided into a plurality of divided nozzle groups; the plurality of divided nozzle groups include: a first divided showerhead group including the divided showerheads located at corners of the showerhead; a second divided head group including the divided heads, the divided heads being located at an outer periphery of the heads and sandwiched by the divided heads of the first divided head group; a third divided head group including the divided heads existing at the center of the heads; and a fourth divided showerhead group including the divided showerheads, the divided showerheads being sandwiched by the third divided showerhead group and the first divided showerhead group or the second divided showerhead group, the flow rates of the process gases supplied to the respective divided showerhead groups being independently controlled; configuring the high frequency antenna to independently control an induced electric field formed by the plurality of divisional showerhead groups in the interior of the processing chamber corresponding to each of the plurality of divisional showerhead groups; the flow rate of the process gas supplied to each of the plurality of divided showerhead groups and the induced electric field formed in the process chamber by each of the plurality of divided showerhead groups are controlled independently of each other.
In order to achieve the above object, a showerhead of the present invention is a showerhead that operates as a metal window of a processing chamber that houses a substrate having a rectangular shape in plan view, the showerhead including: a plurality of divided heads divided by an insulating member in the radial direction and the circumferential direction, the divided heads being capable of independently introducing a process gas into the processing chamber, the divided heads being arranged such that a direction from a center of the head to an outer periphery of the head is a radial direction and a direction around the outer periphery of the head is a circumferential direction; among the heads, the plurality of divided heads are divided into a plurality of divided head groups; the plurality of divided nozzle groups include: a first divided showerhead group including the divided showerheads located at corners of the showerhead; a second divided head group including the divided heads, the divided heads being located at an outer periphery of the heads and sandwiched by the divided heads of the first divided head group; a third divided head group including the divided heads existing at the center of the heads; and a fourth divided showerhead group including the divided showerheads, the divided showerheads being sandwiched by the third divided showerhead group and the first divided showerhead group or the second divided showerhead group, the flow rates of the process gases supplied to the respective divided showerhead groups being independently controlled; configuring the high frequency antenna to independently control an induced electric field formed by the plurality of divisional showerhead groups in the interior of the processing chamber corresponding to each of the plurality of divisional showerhead groups; the flow rate of the process gas supplied to each of the plurality of divided showerhead groups and the induced electric field formed in the process chamber by each of the plurality of divided showerhead groups are controlled independently of each other.
Effects of the invention
According to the present invention, since the flow rates of the process gases supplied to the respective plurality of divided head groups are independently controlled, the flow rates of the process gases introduced into the process chamber from the respective divided head groups can be independently controlled. This makes it possible to arbitrarily adjust the distribution of the process gas in the process chamber. In addition, by independently inducing a loop current in each of the plurality of divided showerhead groups functioning as the metal window to form an induced electric field in the processing chamber, the distribution of the processing gas in the processing chamber can be arbitrarily adjusted. That is, since the distribution of the process gas and the distribution of the induced electric field can be independently controlled in the process chamber, etching can be independently controlled at each location in order to cope with various situations, and uniform plasma processing can be performed on the substrate.
Drawings
Fig. 1 is a sectional view schematically showing the configuration of an inductively coupled plasma processing apparatus as a plasma processing apparatus according to a first embodiment of the present invention.
Fig. 2 is a plan view schematically showing the configuration of the high-frequency antenna of fig. 1.
Fig. 3 is a schematic plan view for explaining a division manner of the head of fig. 1.
Fig. 4 is a schematic diagram for explaining a mode of supplying a process gas to each of the divided showerheads in the inductively coupled plasma processing apparatus of fig. 1.
Fig. 5 is a schematic plan view for explaining a dividing mode of a showerhead in an inductively coupled plasma processing apparatus as a plasma processing apparatus according to a second embodiment of the present invention.
Fig. 6 is a schematic plan view for explaining a dividing mode of a showerhead in an inductively coupled plasma processing apparatus as a plasma processing apparatus according to a third embodiment of the present invention.
Description of the reference numerals
G substrate
10 inductively coupled plasma processing apparatus
11 treatment container
13 spray head
13a to 13x, 52a to 52p divided heads
15 treatment chamber
18 insulating member
20 gas supply pipe
22 high frequency antenna
44-47 gas supply branch pipe
48～51 FRC
Branch pipes 44 a-44 h, 45 a-45 d, 46 a-46 d, 47 a-47 h
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
First, a first embodiment of the present invention will be explained.
Fig. 1 is a sectional view schematically showing the configuration of an inductively coupled plasma processing apparatus as a plasma processing apparatus according to a first embodiment of the present invention.
The inductively coupled plasma processing apparatus 10 shown in fig. 1 performs plasma processing such as etching of a metal film, an ITO film, an oxide film, and the like, and ashing of a resist film, in forming a thin film transistor on a substrate having a rectangular shape in a plan view, for example, a glass substrate for an FPD. FPDs include Liquid Crystal Displays (LCDs), Electro Luminescence (EL) displays, Plasma Display Panels (PDPs), and the like.
The inductively coupled plasma processing apparatus 10 has a square-cylindrical airtight processing container 11 formed of a conductive material such as aluminum having an inner wall surface subjected to anodic oxidation treatment. The processing container 11 is configured to be detachable and electrically grounded via a ground line 12. The processing chamber 11 is partitioned into an antenna chamber 14 and a processing chamber 15 in the vertical direction in the drawing by a shower head 13 formed in a rectangular shape in plan view and insulated from the processing chamber 11. The showerhead 13 functions as a metal window and constitutes a ceiling wall of the processing chamber 15. The shower head 13 which becomes the metal window is composed of an electrically conductive metal such as a non-magnetic body, for example, aluminum or an alloy containing aluminum. In order to improve the plasma resistance of the showerhead 13, a dielectric film or a dielectric protective layer may be provided on the surface of the showerhead 13 on the processing chamber 15 side. The dielectric film is an anodic oxide film or a spraying ceramic film. The dielectric protective layer is a protective layer made of quartz or ceramic.
A support frame 16 protruding toward the inside of the processing container 11 is disposed between the side wall 14a of the antenna chamber 14 and the side wall 15a of the processing chamber 15. The carrier 16 is made of a conductive material such as metal, for example, aluminum. The head 13 is divided into a plurality of, for example, 24 divided heads 13a to 13x by an insulating member 18 as described later. The head 13 is supported by a support frame 16 through an insulating member 18. The process gas is supplied from a gas box 19 for supplying the process gas formed of the mixed gas to each of the divided showerheads 13a to 13x through a gas supply pipe 20, and is introduced into the inside of the process chamber 15 (the process space S) through gas discharge holes 21 formed in each of the divided showerheads 13a to 13 x. That is, the divided showerheads 13a to 13x independently introduce the process gas into the process space S. The mode of the process gas supplied to each of the divided showerheads 13a to 13x will be described in detail later.
In the antenna chamber 14 of the head 13, a high-frequency antenna 22 is disposed facing the head 13. The high-frequency antenna 22 is disposed apart from the head 13 by a spacer (not shown) formed of an insulating member, and is disposed so as to correspond to a first divided head group to a fourth divided head group, which will be described later. The high-frequency antenna 22 is formed in a spiral shape in a plan view as shown in fig. 2, for example, and includes a multiple (quadruple) wire in which 4 substantially L-shaped antennas 22a to 22d made of a conductive material such as copper are wound at intervals of 90 ° while being shifted in rotation angle to form a full spiral shape as a whole, and the arrangement region of each of the antennas 22a to 22d is formed in a substantially frame shape. The mode of the high-frequency antenna 22 is not limited to the example shown in fig. 2, and may be a loop antenna in which one or a plurality of antennas are formed in a loop shape.
The high-frequency antenna 22 is connected to a first high-frequency power supply 26 via a power supply line 24 and a matching unit 25. During the plasma processing, for example, a high-frequency power of 13.56MHz is supplied from the first high-frequency power supply 26 to the high-frequency electric wire 22 through the electric power supply line 24, whereby an induced electric field is formed in the processing space S of the processing chamber 15 by a loop current induced by the shower head 13 operating as a metal window, and a processing gas introduced from the shower head 13 into the processing space S is excited by the formed induced magnetic field, thereby generating plasma in the processing space S of the processing chamber 15.
A mounting table 27 on which a glass substrate for FPD (hereinafter simply referred to as "substrate") G is mounted is fixed to a bottom wall of the processing chamber 15 through an insulating member 28 so as to face the high-frequency antenna 22 with the showerhead 13 interposed therebetween. The mounting table 27 is made of a conductive material, for example, aluminum having an anodized surface, and the substrate G mounted on the mounting table 27 is held by suction on the mounting table 27 by an electrostatic chuck (not shown). An insulating shield ring 29 is disposed on the edge portion 30 of the mounting table 27, and the side surface of the mounting table 27 is covered with the insulating ring 30. A plurality of lift pins 31 for carrying in and out the substrate G are inserted through the mounting table 27 via the bottom wall of the processing chamber 15 and the insulating member 28. The lift pins 31 are driven to move up and down by a lift mechanism (not shown) disposed outside the processing container 11, and carry in and out the substrates G. Further, a matching box 32 and a second high-frequency power supply 33 are disposed below the outside of the processing container 11, and the mounting table 27 is connected to the second high-frequency power supply 33 through a power supply line 34 via the matching box 32. In the plasma processing, the second high-frequency power supply 33 supplies high-frequency power for bias, for example, high-frequency power having a frequency of 3.2MHz, to the stage 27. Ions in the plasma generated inside the processing chamber 15 are efficiently introduced into the substrate G by the self-bias generated by the high-frequency power for biasing.
Further, in the mounting table 27, a temperature control mechanism and a temperature sensor (both not shown) including a heating means such as a heater, a refrigerant flow path, and the like are disposed for controlling the temperature of the substrate G. The piping and wiring corresponding to the above-described mechanisms and components are led out of the processing container 11 through the opening 35 disposed on the bottom surface of the processing container 11 and the insulating member 28.
A transfer port 36 for transferring the substrate G and a gate valve 37 for opening and closing the transfer port 36 are disposed on the side wall 15a of the processing chamber 15. Further, an exhaust unit 39 including a vacuum pump and the like is connected to the bottom wall of the processing chamber 15 through an exhaust pipe 38. The inside of the processing chamber 15 is exhausted by the exhaust device 39, and the inside of the processing chamber 15 is set and maintained in a predetermined vacuum atmosphere (for example, 1.33Pa) during the plasma processing. An extremely thin cooling space (not shown) is formed on the inner surface side of the substrate G mounted on the mounting table 27, and a helium gas as a heat transfer gas at a constant pressure is supplied from the helium gas flow path 40 to the cooling space. By supplying the heat transfer gas to the inner surface side of the substrate G as described above, it is possible to suppress temperature increase or temperature change due to the plasma processing of the substrate G under vacuum.
Each component of the inductively coupled plasma processing apparatus 10 is connected to and controlled by a control unit formed of a microprocessor (computer). The control unit 41 is connected to a user interface 42 including a keyboard for performing an input operation such as an instruction input for an operator to manage the inductively coupled plasma processing apparatus 10, a display for visually displaying an operation status of the inductively coupled plasma processing apparatus 10, and the like. Next, the control unit 41 is connected to a storage unit 43, and the storage unit 43 stores a control program for realizing various processes to be executed in the inductively coupled plasma processing apparatus 10 by the control of the control unit 41, and a process recipe which is a program for causing each processing unit of the inductively coupled plasma processing apparatus 10 to execute the processes according to the processing conditions. Specifically, the processing schemes are stored in a storage medium in the storage section 43. The storage medium may be a hard disk or a semiconductor memory incorporated in a computer, or may be a removable storage medium such as a CD-ROM, a DVD, or a flash memory. In addition, the scheme may be suitably transmitted from other devices, for example, through a dedicated line. Then, by retrieving an arbitrary process recipe from the storage unit 43 and causing the control unit 41 to execute it in accordance with an instruction from the user interface 42 or the like as necessary, a desired process is performed by the inductively coupled plasma processing apparatus 10 under the control of the control unit 41.
The inductively coupled plasma is a plasma generated by passing a high-frequency current through a high-frequency antenna to generate a magnetic field around the antenna, generating a high-frequency discharge by an induced electric field caused by the magnetic field, and exciting a process gas by the high-frequency discharge. When a metal window is used as the ceiling wall of the processing chamber, the magnetic field from the high-frequency antenna does not penetrate the metal window, and the magnetic field does not reach the back surface side of the metal window, that is, the inside of the processing chamber, and plasma is not generated in the inside.
In the present embodiment, in response to the above, the showerhead 13 functioning as a metal window is divided into the divided showerheads 13a to 13x by the insulating member 18, so that a loop current is induced in each of the divided showerheads 13a to 13x to form an induced electric field in the processing space S of the processing chamber 15, and the processing gas introduced into the processing space S is excited by the induced electric field to generate plasma.
Fig. 3 is a schematic plan view for explaining a division manner of the head in fig. 1.
In fig. 3, when the direction from the center to the outer periphery of the head 13 is a radial direction and the direction around the outer periphery of the head 13 is a circumferential direction, the head 13 is divided into a plurality of divided heads 13a to 13x in the radial direction and the circumferential direction by the insulating member 18. Specifically, the head 13 is divided into 3 segments in the radial direction, and then the head 13 divided into 3 segments in the radial direction is divided into 4 segments, 8 segments, and 12 segments in the circumferential direction from the center toward the outer periphery. That is, in the present embodiment, the head 13 is divided into 24 divided heads 13a to 13 x.
The divided heads 13a to 13x are divided into 4 divided head groups. In fig. 3, the divided heads included in the same divided head group are denoted by the same hatching. Specifically, each of the divided heads 13a to 13x is divided into: a first divided head group composed of 8 divided heads 13o, 13p, 13r, 13s, 13u, 13v, 13x, and 13m located at the corners of the head 13; a second divided head group including 4 divided heads 13n, 13q, 13t, and 13w sandwiched by the respective divided heads of the first divided head group located on the outer periphery of the head 13; a third divided head group consisting of 4 divided heads 13a to 13d existing in the vicinity of the center of the head 13; and a fourth divided head group composed of 8 divided heads 13e to 13l sandwiched between the third divided head group and the first divided head group or the second divided head group. As described above, the high-frequency antenna 22 is disposed corresponding to each of the first to fourth divided head groups.
Fig. 4 is a schematic diagram for explaining a mode of supplying a process gas to each of the divided showerheads in the inductively coupled plasma processing apparatus of fig. 1.
In fig. 4, in the inductively coupled plasma processing apparatus 10, the gas supply pipe 20 from the gas box 19 is branched into 4 gas supply branch pipes 44 to 47 corresponding to the first to fourth divided nozzle groups, the gas supply branch pipe 44 supplies the process gas to the first divided nozzle group, the gas supply branch pipe 45 supplies the process gas to the second divided nozzle group, the gas supply branch pipe 46 supplies the process gas to the third divided nozzle group, and the gas supply branch pipe 47 supplies the process gas to the fourth divided nozzle group.
In the inductively coupled plasma processing apparatus 10, 4 Flow Ratio Controllers (FRCs) 48 to 51 are disposed corresponding to the gas supply branch pipes 44 to 47, and the FRCs 48 to 51 independently control the Flow rate of the processing gas flowing through the corresponding gas supply branch pipes 44 to 47. Thus, the flow rates of the process gases introduced into the process space S from the first to fourth divided showerhead groups can be independently controlled.
The gas supply branch pipes 44 to 47 branch downstream of the FRCs 48 to 51, and supply the process gases to the divided showerheads 13a to 13x independently. For example, as shown in fig. 4, the gas supply branch pipe 45 is branched into 4 branch pipes 45a to 45d (gas flow paths), and the branch pipes 45a to 45d are connected to the divided heads 13n, 13q, 13t, and 13w of the second divided head group, respectively. In the gas supply branch pipe 45, the length of the gas flow path from the FRC49 to the divided showerheads 13n, 13q, 13t, and 13w through the branch pipes 45a to 45d is uniform, and the cross-sectional area of the branch pipes 45a to 45d is uniform. Therefore, the gas flow paths from the FRC49 to the divided showerheads 13n, 13q, 13t, and 13w are conducted in the same manner, and the process gas is equally distributed to the divided showerheads 13n, 13q, 13t, and 13 w. As a result, the same amount of the process gas can be introduced into the process space S from the divided showerheads 13n, 13q, 13t, and 13 w.
The gas supply branch pipe 44 is branched into 8 branch pipes 44a to 44h, and the branch pipes 44a to 44h are connected to the split heads 13o, 13p, 13r, 13s, 13u, 13v, 13x, and 13m of the first split head group, respectively. In the gas supply branch pipe 44, the branch pipes 44a to 44h are uniform in length, and the cross-sectional areas of the branch pipes 44a to 44h are also uniform. Therefore, the same amount of the process gas can be introduced into the process space S from the divided showerheads 13o, 13p, 13r, 13S, 13u, 13v, 13x, and 13 m.
Further, the gas supply branch pipe 46 is branched into 4 branch pipes 46a to 46d, and the branch pipes 46a to 46d are connected to the divided heads 13a to 13d of the third divided head group, respectively. In the gas supply branch pipes 46, the lengths of the branch pipes 46a to 46d are uniform, and the cross-sectional areas of the branch pipes 46a to 46d are also uniform. Therefore, the same amount of the process gas can be introduced into the process space S from each of the divided showerheads 13a to 13 d.
The gas supply branch pipe 47 is branched into 8 branch pipes 47a to 47h, and the branch pipes 47a to 47h are connected to the divided heads 13e to 13l of the fourth divided head group, respectively. In the gas supply branch pipe 47, the branch pipes 47a to 47h are uniform in length, and the cross-sectional areas of the branch pipes 47a to 47h are also uniform. Therefore, the same amount of the process gas can be introduced into the process space S from each of the divided showerheads 13e to 13 l.
In the inductively coupled plasma processing apparatus 10, since the high-frequency antenna 22 is disposed so as to correspond to each of the first to fourth divided showerhead groups, the intensity of the induced electric field in the portion corresponding to the first to fourth divided showerhead groups can be controlled by the high-frequency antenna 22 in accordance with the flow rate of the process gas introduced into the portion facing the first to fourth divided showerhead groups in the processing space S.
According to the inductively coupled plasma processing apparatus 10, since the flow rates of the process gases supplied to the first to fourth divided showerhead groups can be independently controlled, the flow rates of the process gases introduced into the processing space S from the first to fourth divided showerhead groups can be independently controlled. This allows the distribution of the process gas in the process space S to be arbitrarily adjusted. In addition, the distribution of the induced electric field in the processing space S can be arbitrarily adjusted by causing the first to fourth divided shower head groups functioning as the metal windows to generate the loop currents independently from each other to form the induced electric field in the processing space S. That is, in the processing space S, since the distribution of the processing gas and the distribution of the induced electric field can be independently controlled, etching can be independently controlled at each location in order to cope with various situations, and uniform plasma processing can be performed on the substrate G.
Specifically, in the inductively coupled plasma processing apparatus 10, for example, when etching an aluminum (Al) film formed on the substrate G, chlorine gas is introduced as a processing gas from each of the divided showerheads 13a to 13x into the processing space S, an induced electric field is formed in the processing space S by the high-frequency antenna 22, and the chlorine gas is excited to generate inductively coupled plasma. At this time, the generated plasma contacts the side wall 15a and loses activity, and therefore, the toroidal current induced in the first divided head group including the divided heads 13o, 13p, 13r, 13s, 13u, 13v, 13x, and 13m positioned at the corners of the head 13 and the second divided head group including the divided heads 13n, 13q, 13t, and 13w positioned on the outer periphery of the head 13 is increased as compared with the toroidal current induced in the third divided head group including the divided heads 13a to 13d positioned in the vicinity of the center of the head 13 and the fourth divided head group including the divided heads 13e to 13l interposed between the third divided head group and the first divided head group or the second divided head group, and the induced electric field formed in the vicinity of the side wall 15a is enhanced. Thereby, the generated plasma in the vicinity of the side wall 15a is increased, and the plasma that has been brought into contact with the side wall 15a and has lost activity is replenished, so that a uniform distribution of the inductively coupled plasma is realized in the processing space S (more preferably, adjustment is made such that the amount of induced toroidal current is third divided nozzle group < fourth divided nozzle group < second divided nozzle group < first divided nozzle group). In addition, although a large amount of unreacted chlorine gas is present at the peripheral edge of the substrate G, the chemical reactivity of the aluminum film to be etched is high, and thus the etching rate around the substrate G is increased by the loading effect. In order to suppress the load effect, the amount of chlorine gas supplied to the first divided head group located at the corner of the head 13 and the second divided head group located at the outer periphery of the head 13 is made smaller than the amount of chlorine gas supplied to the third divided head group located near the center of the head 13 and the fourth divided head group sandwiched by the third divided head group and the first divided head group or the second divided head group (more preferably, adjustment is made so that the amount of chlorine gas supplied is the third divided head group > the second divided head group > the first divided head group.).
In addition, in the inductively coupled plasma processing apparatus 10, there are cases where: on the silicon oxide (SiO) formed on the substrate G2) Carbon tetrafluoride (CF) is used as the processing gas when the film is etched4) And oxygen (O)2) The mixed gas (2) is introduced into the processing space S from the divided showerheads 13a to 13x, and an induced electric field is formed in the processing space S by the high frequency antenna 22 to excite the processing gas and generate inductively coupled plasma. In this case, the silicon oxide film to be etched has strong bonding between silicon atoms and oxygen atoms and low chemical reactivity with the process gas, and thus, the loading effect is hardly exhibited. Therefore, in order to suppress the load effect, it is not necessary to make the process gas uneven in the process space S, and the flow rates of the process gas supplied to the first divided head group located at the corner of the showerhead 13, the annular current induced to the second divided head group located at the outer periphery of the showerhead 13, the third divided head group located near the center of the showerhead 13, and the fourth divided head group sandwiched by the third divided head group and the first divided head group or the second divided head group can be made equal. As described above, the first to fourth divided shower head groups can independently control the flow rate of the process gas supplied to the process space S and the flow rate of the process gas during the processSince the amount of the induced electric field formed in the space S is small, etching can be independently controlled at each part of the processing space S, and uniform plasma processing of the substrate G can be realized.
In the inductively coupled plasma processing apparatus 10, the gas supply branch pipe 45 has a uniform length of the gas flow path from the FRC49 to the divided heads 13n, 13q, 13t, and 13w through the branch pipes 45a to 45d, and the cross-sectional areas of the branch pipes 45a to 45d are uniform. Therefore, the gas flow paths from the FRC49 to the divided heads 13n, 13q, 13t, and 13w can be uniformly conducted, and the process gas can be uniformly distributed to the divided heads 13n, 13q, 13t, and 13 w. This eliminates the need to provide an FRC for uniformly distributing the process gas to the divided showerheads 13n, 13q, 13t, and 13w of the second divided showerhead group, and simplifies the configuration of the inductively coupled plasma processing apparatus 10. The same effect can be obtained for the first, third, and fourth divided head groups.
Further, in the inductively coupled plasma processing apparatus 10, since the high-frequency antennas 22 are disposed so as to correspond to the first to fourth divided showerhead groups, the intensity distribution of the induced electric field in the processing space S can be controlled in accordance with the distribution of the process gas, and the distribution of the inductively coupled plasma in the processing space S can be controlled in detail.
Next, a second embodiment of the present invention will be explained.
The second embodiment has basically the same configuration and operation as those of the first embodiment described above, and therefore, redundant description of the configuration and operation will be omitted, and different configurations and operations will be described below.
Fig. 5 is a schematic plan view for explaining a dividing mode of a showerhead in an inductively coupled plasma processing apparatus as a plasma processing apparatus according to a second embodiment of the present invention.
In fig. 5, each of the divided heads 13a to 13x is divided into 5 divided head groups. In fig. 5, the divided heads included in the same divided head group are denoted by the same hatching. Specifically, it is divided into: a first divided head group consisting of 8 divided heads 13o, 13p, 13r, 13s, 13u, 13v, 13x, and 13 m; a third divided head group consisting of 4 divided heads 13a to 13 d; a fourth divided head group consisting of 8 divided heads 13e to 13 l; a fifth divided head group consisting of 2 divided heads 13n, 13t located on the outer periphery of the head 13 and along the long sides of the head 13; and a sixth divided head group consisting of 2 divided heads 13w, 13q located on the outer periphery of the head 13 and along the short sides of the head 13. In the present embodiment, the high-frequency antenna 22 is disposed so as to correspond to the first divided head group, the third divided head group, and the sixth divided head group.
In the present embodiment, the gas supply pipe 20 from the gas box 19 is branched into 5 gas supply branch pipes corresponding to the first, third to sixth divided shower head groups, 5 FRCs are arranged corresponding to the gas supply branch pipes, and the FRCs independently control the flow rates of the process gases flowing through the corresponding gas supply branch pipes. Accordingly, the flow rates of the process gases introduced into the process space S from the first divided showerhead group, the third divided showerhead group, to the sixth divided showerhead group can be independently controlled.
In each gas supply branch pipe, the length of the gas flow path from the corresponding FRC to each divided showerhead of the same divided showerhead group via each branch pipe is uniform, and the cross-sectional area of each branch pipe is also uniform. Therefore, the gas flow paths from the FRC to the respective divided heads of the same divided head group are conducted in the same manner, and the process gas is equally distributed to the respective divided heads. As a result, the same amount of the process gas is introduced into the process space S from each of the divided heads of the same divided head group.
Next, a third embodiment of the present invention will be explained.
The third embodiment has basically the same configuration and operation as those of the first embodiment described above, and therefore, redundant description of the configuration and operation will be omitted, and different configurations and operations will be described below.
Fig. 6 is a schematic plan view for explaining a dividing mode of a showerhead in an inductively coupled plasma processing apparatus as a plasma processing apparatus according to a third embodiment of the present invention.
In fig. 6, the head 13 is divided into a plurality of divided heads 13a to 13x in the radial direction and the circumferential direction by an insulating member 18. Specifically, the head 13 is divided into 4 segments in the radial direction, and then the head 13 divided into 4 segments in the radial direction is divided into 4 segments, 8 segments, 12 segments, and 16 segments in the circumferential direction from the center toward the outer periphery. That is, in the present embodiment, the head 13 is divided into 40 divided heads 13a to 13x and 52a to 52 p.
The divided heads 13a to 13x and 52a to 52p are divided into 6 divided head groups. In fig. 6, the same hatching is applied to the divided heads included in the same divided head group. Specifically, the divided heads 13a to 13x and 52a to 52p are divided into: a seventh divided head group composed of 8 divided heads 52a, 52d, 52e, 52h, 52i, 52l, 52m, and 52p located at the corners of the head 13; an eighth divided head group including 8 divided heads 52b, 52c, 52f, 52g, 52j, 52k, 52n, and 52o located on the outer periphery of the divided head 13 and sandwiched by the respective divided heads of the first divided head group; a third divided head group consisting of 4 divided heads 13a to 13d existing in the vicinity of the center of the head 13; a fourth divided head group composed of 8 divided heads 13e to 13l radially adjacent to the divided heads 13a to 13d of the third divided head group; a first divided head group composed of 8 divided heads 13o, 13p, 13r, 13s, 13u, 13v, 13x, and 13m sandwiched by a seventh divided head group and a fourth divided head group; and a second divided head group including 4 divided heads 13n, 13q, 13t, and 13w sandwiched between the eighth divided head group and the fourth divided head group. In the present embodiment, the high-frequency antennas 22 are arranged so as to correspond to the first to fourth divided head groups, the seventh divided head group, and the eighth divided head group.
In the present embodiment, the gas supply pipe 20 from the gas box 19 is branched into 6 gas supply branch pipes corresponding to the first to fourth divided head groups, the seventh divided head group, and the eighth divided head group, and 6 FRCs are arranged corresponding to the respective gas supply branch pipes, and the respective FRCs independently control the flow rate of the process gas flowing through the corresponding gas supply branch pipes. Accordingly, the flow rates of the process gases introduced into the process space S from the first to fourth divided showerhead groups, the seventh divided showerhead group, and the eighth divided showerhead group can be independently controlled.
In addition, the lengths of the gas flow paths from the corresponding FRC to the respective divided showerheads of the same divided showerhead group through the respective branch pipes are uniform in the respective gas supply branch pipes, and the sectional areas of the respective branch pipes are also uniform. Therefore, the gas flow paths from the FRC to the respective divided heads of the same divided head group are conducted in the same manner, and the process gas is equally distributed to the respective divided heads. As a result, the same amount of the process gas is introduced into the process space S from each of the divided heads of the same divided head group.
The present invention has been described above with reference to the above embodiments, but the present invention is not limited to the above embodiments.
Claims (7)
1. A plasma processing apparatus, comprising:
a processing chamber for accommodating a substrate having a rectangular shape in a plan view;
a high frequency antenna for generating an inductively coupled plasma; and
a shower head having a rectangular shape in a plan view and functioning as a metal window of the processing chamber,
wherein the showerhead is divided into a plurality of divided showerheads by an insulating member in the radial direction and the circumferential direction when a direction from a center to an outer periphery of the showerhead is a radial direction and a direction around the outer periphery of the showerhead is a circumferential direction, and each of the divided showerheads is capable of independently introducing a process gas into the process chamber,
the plurality of divided heads are divided into a plurality of divided head groups,
the plurality of divided nozzle groups include:
a first divided showerhead group including a plurality of the divided showerheads located at corners of the showerhead;
a second divided head group including a plurality of the divided heads located on an outer periphery of the head and sandwiched by the respective divided heads of the first divided head group;
a third divided head group including a plurality of the divided heads which exist at a center of the heads and are divided in a circumferential direction; and
a fourth divided head group including a plurality of the divided heads that are sandwiched by the third divided head group and the first divided head group or the second divided head group and are divided in a circumferential direction,
the flow rate of the process gas supplied to each of the plurality of divided nozzle groups may be independently controlled for each of the divided nozzle groups.
2. The plasma processing apparatus according to claim 1, wherein:
each of the split heads of the second split head group is divided into:
a fifth divided showerhead group including the divided showerheads along the long sides of the showerhead; and
a sixth divided head group including the divided heads along a short side of the head,
the flow rates of the process gases supplied to the fifth and sixth divided shower head groups can be independently controlled.
3. The plasma processing apparatus according to claim 1 or 2, wherein:
each of the divided heads constituting each of the plurality of divided head groups is connected to a gas flow path branched from each of the flow rate ratio controllers corresponding to each of the divided head groups,
the length of the gas flow path from the flow rate ratio controller to each of the divided head positions is uniform in each of the plurality of divided head groups.
4. The plasma processing apparatus according to claim 1 or 2, wherein:
the high-frequency antenna is disposed corresponding to each of the plurality of divided head groups.
5. A shower head having a rectangular shape in plan view, which functions as a metal window of a processing chamber for housing a substrate having a rectangular shape in plan view, characterized in that:
wherein the showerhead is divided into a plurality of divided showerheads by an insulating member in the radial direction and the circumferential direction when a direction from a center to an outer periphery of the showerhead is a radial direction and a direction around the outer periphery of the showerhead is a circumferential direction, and each of the divided showerheads is capable of independently introducing a process gas into the process chamber,
the plurality of divided heads are divided into a plurality of divided head groups,
the plurality of divided nozzle groups include:
a first divided showerhead group including a plurality of the divided showerheads located at corners of the showerhead;
a second divided head group including a plurality of the divided heads located on an outer periphery of the head and sandwiched by the respective divided heads of the first divided head group;
a third divided head group including a plurality of the divided heads which exist at a center of the heads and are divided in a circumferential direction; and
a fourth divided head group including a plurality of the divided heads that are sandwiched by the third divided head group and the first divided head group or the second divided head group and are divided in a circumferential direction,
the flow rate of the process gas supplied to each of the plurality of divided nozzle groups may be independently controlled for each of the divided nozzle groups.
6. A plasma processing apparatus, comprising:
a processing chamber for accommodating a substrate having a rectangular shape in a plan view;
a high frequency antenna for generating an inductively coupled plasma; and
a shower head having a rectangular shape in a plan view and functioning as a metal window of the processing chamber,
wherein the showerhead is divided into a plurality of divided showerheads by an insulating member in the radial direction and the circumferential direction when a direction from a center to an outer periphery of the showerhead is a radial direction and a direction around the outer periphery of the showerhead is a circumferential direction, and each of the divided showerheads is capable of independently introducing a process gas into the process chamber,
the plurality of divided heads are divided into a plurality of divided head groups,
the plurality of divided nozzle groups include:
a first divided showerhead group including a plurality of the divided showerheads located at corners of the showerhead;
a second divided head group including a plurality of the divided heads located on an outer periphery of the head and sandwiched by the respective divided heads of the first divided head group;
a third divided head group including a plurality of the divided heads which exist at a center of the heads and are divided in a circumferential direction; and
a fourth divided head group including a plurality of the divided heads that are sandwiched by the third divided head group and the first divided head group or the second divided head group and are divided in a circumferential direction,
the flow rate of the process gas supplied to each of the plurality of divided nozzle groups can be independently controlled for each divided nozzle group,
the high-frequency antenna is disposed corresponding to each of the plurality of divided head groups, and an induced electric field formed in the processing chamber by each of the plurality of divided head groups can be independently controlled,
the flow rate of the process gas supplied to each of the plurality of divided showerhead groups and the induced electric field formed in the process chamber by each of the plurality of divided showerhead groups can be controlled independently of each other.
7. A shower head having a rectangular shape in plan view, which functions as a metal window of a processing chamber for housing a substrate having a rectangular shape in plan view, characterized in that:
wherein the showerhead is divided into a plurality of divided showerheads by an insulating member in the radial direction and the circumferential direction when the direction from the center to the outer periphery of the showerhead is a radial direction and the direction around the outer periphery of the showerhead is a circumferential direction, and each of the divided showerheads is capable of independently introducing a process gas into the process chamber,
the plurality of divided heads are divided into a plurality of divided head groups,
the plurality of divided nozzle groups include:
a first divided showerhead group including a plurality of the divided showerheads located at corners of the showerhead;
a second divided head group including a plurality of the divided heads located on an outer periphery of the head and sandwiched by the respective divided heads of the first divided head group;
a third divided head group including a plurality of the divided heads which exist at a center of the heads and are divided in a circumferential direction; and
a fourth divided head group including a plurality of the divided heads that are sandwiched by the third divided head group and the first divided head group or the second divided head group and are divided in a circumferential direction,
the flow rate of the process gas supplied to each of the plurality of divided nozzle groups can be independently controlled for each divided nozzle group,
a high frequency antenna for generating inductively coupled plasma is disposed corresponding to each of the plurality of divided showerhead groups, and an induced electric field formed in the processing chamber by each of the plurality of divided showerhead groups can be independently controlled,
the flow rate of the process gas supplied to each of the plurality of divided showerhead groups and the induced electric field formed in the process chamber by each of the plurality of divided showerhead groups can be controlled independently of each other.
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