TWI611455B - Inductively coupled plasma processing device - Google Patents
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- 238000009616 inductively coupled plasma Methods 0.000 title claims abstract description 60
- 229910052751 metal Inorganic materials 0.000 claims abstract description 90
- 239000002184 metal Substances 0.000 claims abstract description 90
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 238000000034 method Methods 0.000 claims description 14
- 230000001939 inductive effect Effects 0.000 claims description 13
- 230000008878 coupling Effects 0.000 claims description 12
- 238000010168 coupling process Methods 0.000 claims description 12
- 238000005859 coupling reaction Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 11
- 238000007599 discharging Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 description 61
- 239000000919 ceramic Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 7
- 238000009832 plasma treatment Methods 0.000 description 7
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- 238000005516 engineering process Methods 0.000 description 2
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- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- 238000005192 partition Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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Abstract
提供一種可對大型之被處理基板,使用分割型的介電質窗進行均勻之電漿處理的感應耦合電漿處理裝置。 Provided is an inductively coupled plasma processing apparatus capable of performing uniform plasma processing on a large-sized substrate to be processed using a divided dielectric window.
一種對矩形狀之基板施予感應耦合電漿處理之感應耦合電漿處理裝置,係具備:處理室,收容基板;高頻天線,用於在配置有處理室內之基板的區域產生感應耦合電漿;及介電質窗,呈矩形狀,被配置於產生有感應耦合電漿之電漿產生區域與高頻天線之間,並對應於基板而設,高頻天線係以在對應於介電質窗之面內環繞的方式而設,介電質窗(2)係藉由金屬製之支撐樑(6)分割為複數個分割片,使形成含有包含長邊(2a)的第1分割片(201)與包含短邊(2b)的第2分割片(202),且第2分割片(202)之徑向的寬度a與第1分割片(201)之徑向的寬度b之比a/b係分割為0.8以上1.2以下之範圍。 An inductively coupled plasma processing device for inductively coupled plasma processing on a rectangular substrate, comprising: a processing chamber, a receiving substrate; and a high-frequency antenna for generating an inductively coupled plasma in an area where the substrate in the processing chamber is arranged. ; And the dielectric window, which is rectangular, is arranged between the plasma generating area where the inductively coupled plasma is generated and the high-frequency antenna, and is provided corresponding to the substrate, and the high-frequency antenna is provided in a manner corresponding to the dielectric. The dielectric window (2) is divided into a plurality of divided pieces by a metal supporting beam (6) to form a first divided piece including a long side (2a) ( 201) and the ratio a / of the second divided piece (202) including the short side (2b), and the radial width a of the second divided piece (202) to the radial width b of the first divided piece (201) b is divided into a range of 0.8 to 1.2.
Description
本發明係有關對平板顯示器(FPD)製造用之玻璃基板等之被處理基板施予電漿處理的感應耦合電漿處理裝置。 The present invention relates to an inductively coupled plasma processing apparatus for applying plasma processing to a substrate to be processed, such as a glass substrate for manufacturing a flat panel display (FPD).
在液晶顯示裝置(LCD)等之平板顯示器(FPD)製造工程中,存在有對玻璃基板進行電漿蝕刻或成膜處理等之電漿處理的工程,為了進行該電漿處理而使用電漿蝕刻裝置或電漿CVD裝置等各種的電漿處理裝置。雖然以往大多使用電容耦合電漿處理裝置作為電漿處理裝置,但具有能夠以高真空度獲得高密度之電漿該優點的感應耦合電漿(Inductively Coupled Plasma:ICP)處理裝置最近受到注目。 In the process of manufacturing a flat panel display (FPD) such as a liquid crystal display device (LCD), there is a process of performing plasma processing such as plasma etching or film forming processing on a glass substrate. To perform the plasma processing, plasma etching is used. Equipment or various plasma processing equipment such as plasma CVD equipment. Although conventionally, a capacitively coupled plasma processing apparatus has been used as a plasma processing apparatus, an inductively coupled plasma (ICP) processing apparatus having the advantage of being able to obtain a high-density plasma with a high degree of vacuum has recently attracted attention.
感應耦合電漿處理裝置係在構成收容被處理基板之處理室頂壁之介電質窗的上側配置高頻天線,藉由對處理室內供給處理氣體並對該高頻天線供給高頻電力,使感應耦合電漿產生於處理室內,而藉由該感應耦合電漿對被處理基板施予預定的電漿處理。大多是使用呈平面狀 之預定圖案的平面天線來作為感應耦合電漿處理裝置的高頻天線。作為像這樣的感應耦合電漿處理裝置,已知有例如專利文獻1所揭示之技術。 An inductively coupled plasma processing device is configured by placing a high-frequency antenna on the upper side of a dielectric window constituting a top wall of a processing chamber that houses a substrate to be processed. By supplying a processing gas into the processing chamber and supplying high-frequency power to the high-frequency antenna, An inductive coupling plasma is generated in a processing chamber, and a predetermined plasma treatment is applied to a substrate to be processed by the inductive coupling plasma. Mostly flat A planar antenna with a predetermined pattern is used as a high-frequency antenna of the inductively coupled plasma processing device. As such an inductively coupled plasma processing apparatus, for example, a technique disclosed in Patent Document 1 is known.
近來,被處理基板之尺寸大型化,在例如LCD用之矩形狀玻璃基板中,短邊×長邊之長度約1500mm×1800mm的尺寸~約2200mm×2400mm的尺寸,且約2800mm×3000mm尺寸,其大型化顯著。 Recently, the size of a substrate to be processed has increased. For a rectangular glass substrate for LCD, for example, a short side × long side has a length of about 1500 mm × 1800 mm to a size of about 2200 mm × 2400 mm, and a size of about 2800 mm × 3000 mm. Significantly larger.
伴隨著這樣的被處理基板大型化,則構成感應耦合電漿處理裝置之頂壁的矩形狀介電質窗亦被大型化。構成介電質窗之石英或陶瓷等的介電質材料較脆,因此不適於大型化。因此,例如專利文獻2所記載般,以金屬製之支撐樑(金屬支撐樑)來將介電質窗予以4分割等,來應付介電質窗的大型化。 Along with the increase in the size of such a substrate to be processed, the rectangular dielectric window constituting the ceiling wall of the inductively coupled plasma processing apparatus is also increased in size. Dielectric materials such as quartz and ceramic constituting the dielectric window are relatively brittle, and therefore are not suitable for large-scale. Therefore, for example, as described in Patent Document 2, a dielectric support beam (metal support beam) is used to divide the dielectric window into four or the like to cope with an increase in the size of the dielectric window.
然而,被處理基板的大型化更明顯進展,因此,評估進一步增加介電質窗部的分割數,若利用專利文獻2所記載之直線性的分割之手法,將介電質窗分割成每一邊3個例如均等地9分割時,若使高頻天線形成環狀或漩渦狀,則區隔中央之分割窗的金屬支撐樑會構成平行於高頻天線的閉合電路,並在金屬支撐樑產生反電動勢而導致金屬支撐樑正下方的電漿變弱。 However, the size of the substrate to be processed has progressed more significantly. Therefore, it is estimated that the number of divisions of the dielectric window portion is further increased. If the linear division method described in Patent Document 2 is used, the dielectric window is divided into each side. For example, if three high-frequency antennas are formed into a loop or vortex evenly when divided into three parts, the metal support beam separating the central division window will form a closed circuit parallel to the high-frequency antenna and generate a reaction in the metal support beam. The electromotive force causes the plasma under the metal support beam to weaken.
因此,在專利文獻3中,揭示了在金屬支撐樑中不會構成平行於高頻天線的閉合電路,而是在介電質窗的中央部份以交叉於高頻天線之放射狀的金屬支撐樑來分割介電質窗的技術。 Therefore, Patent Document 3 discloses that a metal support beam does not form a closed circuit parallel to a high-frequency antenna, but instead supports a radial metal structure intersecting the high-frequency antenna at the central portion of the dielectric window. Beam to divide dielectric window technology.
例如,如圖17所示,使高頻天線413中的3個環狀天線413a,413b,413c形成為同心狀之樣態時,藉由在金屬支撐樑406設置從介電質窗402的中央放射狀延伸之部份而形成8分割,來使金屬支撐樑406不構成平行於高頻天線的閉合電路。 For example, as shown in FIG. 17, when the three loop antennas 413 a, 413 b, and 413 c of the high-frequency antenna 413 are formed concentrically, the metal support beam 406 is provided from the center of the dielectric window 402. The radially extending portion is formed into 8 divisions so that the metal supporting beam 406 does not constitute a closed circuit parallel to the high-frequency antenna.
[先前技術文獻] [Prior technical literature]
[專利文獻] [Patent Literature]
[專利文獻1]日本特許3077009號公報 [Patent Document 1] Japanese Patent No. 3077009
[專利文獻2]日本特許3609985號公報 [Patent Document 2] Japanese Patent No. 3609985
[專利文獻3]日本特開2012-227428號公報 [Patent Document 3] Japanese Patent Laid-Open No. 2012-227428
然而,如圖17所示,以從介電質窗402之中央放射狀延伸的方式形成金屬支撐樑406時,由於對應於矩形狀基板而形成為矩形狀的介電質窗402之包含長邊的長邊中央分割片402a與包含短邊的短邊中央分割片402b其徑向的寬度不同、高頻天線413之天線線的圈數相同,因此,長邊中央分割片402a與短邊中央分割片402b其感應電場的電場強度會不同,而難以進行均勻性高的電漿處理。 However, as shown in FIG. 17, when the metal supporting beam 406 is formed so as to extend radially from the center of the dielectric window 402, the rectangular-shaped dielectric window 402 includes long sides because it corresponds to a rectangular substrate. The long-side central segment 402a and the short-side central segment 402b including short sides have different radial widths, and the number of turns of the antenna line of the high-frequency antenna 413 is the same. The electric field strength of the induced electric field of the sheet 402b is different, and it is difficult to perform plasma treatment with high uniformity.
像這樣的問題並不會產生有在金屬支撐樑構成平行於高頻天線之閉合電路的問題,即使在以對角線4 分割例如矩形之介電質窗402的情況下亦同樣會產生。 Problems like this do not create the problem of forming a closed circuit parallel to the high-frequency antenna on the metal support beam, even in the diagonal 4 This is also the case when a rectangular dielectric window 402 is divided, for example.
另一方面,在專利文獻3中,揭示了以金屬支撐樑為淋浴頭框體供給處理氣體的特徵,但在圖17般之分割態樣中,有時會有從金屬支撐樑氣體供給不足夠的情形,在該情況下,則必須在介電質窗402的中央部個別設置配置成英國國旗(Union Jack)狀之氣體吐出孔之陶瓷製的淋浴構件。該情況下,由於陶瓷製的淋浴構件較昂貴,因此成本會上升。又,在處理室內會形成凹凸,故,副產物會容易附著且容易產生其剝落所致的微粒。 On the other hand, Patent Document 3 discloses a feature of supplying a processing gas using a metal support beam as a shower head frame. However, in the divided state shown in FIG. 17, the gas supply from the metal support beam may be insufficient. In this case, it is necessary to separately provide a ceramic shower member arranged in the center portion of the dielectric window 402 with a gas discharge hole in the shape of a Union Jack. In this case, since a ceramic shower member is expensive, the cost increases. In addition, since unevenness is formed in the processing chamber, by-products are liable to adhere and particles due to peeling are easily generated.
因此,如圖18所示,雖考慮了使金屬支撐樑406本身形成為英國國旗狀並將此使用來作為淋浴頭框體,但由於金屬支撐樑406集中於介電質窗402的中心,故,會有電漿密度在處理室的中央部下降之疑慮。 Therefore, as shown in FIG. 18, although it is considered that the metal support beam 406 itself is formed in the shape of a British flag and used as a shower head frame, the metal support beam 406 is concentrated in the center of the dielectric window 402. There is a concern that the plasma density decreases in the center of the processing chamber.
本發明係鑑於上述情形而研發者,以提供一種可對大型化之被處理基板,使用分割型的介電質窗進行均勻之電漿處理的感應耦合電漿處理裝置作為課題。 The present invention has been made by a developer in view of the above-mentioned circumstances, and it is an object of the present invention to provide an inductively-coupled plasma processing apparatus capable of performing uniform plasma processing on a large-sized substrate to be processed using a divided dielectric window.
又,以提供一種對大型被處理基板使用分割型的介電質窗時,即使將分割介電質窗的金屬支撐樑用來作為淋浴頭框體,亦不會產生中央部之電漿密度下降的感應耦合電漿處理裝置為課題。 In addition, when a divided type dielectric window is used for a large substrate to be processed, even if the metal supporting beam of the divided dielectric window is used as a shower head frame, the plasma density in the central portion does not decrease. The subject of inductively coupled plasma processing equipment.
為了解決上述課題,本發明的第1觀點係提供一種感應耦合電漿處理裝置,係對矩形狀之基板施予感應 耦合電漿處理的感應耦合電漿處理裝置,其特徵係具備:處理室,收容基板;高頻天線,用於在配置有前述處理室內之基板的區域產生感應耦合電漿;及介電質窗,呈矩形狀,被配置於產生有前述感應耦合電漿之電漿產生區域與前述高頻天線之間,並對應於基板而設,前述高頻天線係以在對應於前述介電質窗之面內環繞的方式而設,前述介電質窗係藉由金屬製之支撐樑被分割為複數個分割片,使形成含有包含長邊的第1分割片與包含短邊的第2分割片,且前述第2分割片之徑向的寬度a與前述第1分割片之徑向的寬度b之比a/b係分割為0.8以上1.2以下之範圍。 In order to solve the above-mentioned problems, a first aspect of the present invention is to provide an inductively coupled plasma processing apparatus for inducing a rectangular substrate. The inductively-coupled plasma processing device for coupled plasma processing is characterized by comprising: a processing chamber, a receiving substrate; a high-frequency antenna for generating an inductively-coupled plasma in an area where the substrate in the processing chamber is arranged; and a dielectric window. Is rectangular and is arranged between the plasma generating area where the inductive coupling plasma is generated and the high-frequency antenna, and is provided corresponding to the substrate. The high-frequency antenna is provided in a position corresponding to the dielectric window. The dielectric window is divided into a plurality of divided pieces by a metal supporting beam, so that a first divided piece including a long side and a second divided piece including a short side are formed. The ratio a / b of the width a in the radial direction of the second divided piece to the width b in the radial direction of the first divided piece is divided into a range of 0.8 or more and 1.2 or less.
在上述第1觀點之感應耦合電漿處理裝置中,前述介電質窗係在將從其4個角落朝向45°±6°方向延伸的線設為第1線,將連結前述第1線中分別夾著前述短邊之2條線所交會的2個交點且與前述長邊平行的線設為第2線時,可形成為藉由沿著前述第1線及前述第2線而設之前述金屬製的支撐樑,來分割為前述第1分割片與前述第2分割片的構成。 In the inductively-coupled plasma processing apparatus according to the first aspect, the dielectric window is a line extending from the four corners in a direction of 45 ° ± 6 °, and the first line is connected to the first line. When a line parallel to the long side is interposed between the two intersections intersected by the two short sides, the second line may be formed by following the first line and the second line. The metal support beam is configured to be divided into the first divided piece and the second divided piece.
又,前述介電質窗,係前述長邊及前述短邊被分別進行3分割以上,在前述金屬製的支撐樑中,可形成為不存在有沿著前述高頻天線而產生之閉迴路電路的構成。 In addition, the dielectric window is formed by dividing the long side and the short side by three or more, and the metal support beam may be formed without a closed-loop circuit generated along the high-frequency antenna. Composition.
該情況下,在將從前述介電質窗的4個角落朝向45°±6°方向延伸的線設為第1線,將連結前述第1線中分別夾著前述短邊之2條線所交會的2個第1交點且與前述長 邊平行的線設為第2線,將一對長邊分別3分割的線設為第3線,將一對短邊分別3分割的線設為第4線,將前述第1線與前述第3線與前述第4線的交點設為第2交點時,前述介電質窗係具有:2個前述第1分割片,以前述第2線、從一方之前述長邊延伸的2條前述第3線、前述第1線之前述第1交點與前述第2交點之間的部份來區隔,且包含前述長邊而形成於前述長邊的中央部;2個前述第2分割片,以從一方之前述短邊延伸的2條前述第4線、前述第1線之前述第1交點與前述第2交點之間的部份來區隔,且包含前述短邊而形成於前述短邊的中央部;及4個第3分割片,以前述第3線與前述第4線來區隔,形成於前述介電質窗的角部,該些分割片係可形成為藉由前述金屬製的支撐樑予以分割的構成。 In this case, a line extending from the four corners of the dielectric window in the direction of 45 ° ± 6 ° is set as the first line, and the two lines connecting the first line with the short sides are sandwiched therebetween. The 2 first intersections of the rendezvous are the same as above A line parallel to each other is set as a second line, a pair of lines separated by three long sides is set as a third line, a pair of lines separated by three short sides is set to a fourth line, and the first line and the first line are divided. When the intersection of the 3rd line and the 4th line is the second intersection, the dielectric window system includes: the 2nd first divided piece, the 2nd line extending from the long side of the first line by the second line; Line 3, the part between the first intersection point and the second intersection point of the first line is separated from each other, and includes the long side and is formed at the central part of the long side; It is divided from the part between the two aforementioned fourth lines extending from one of the aforementioned short sides, the aforementioned first intersection point of the aforementioned first line, and the aforementioned second intersection point, and includes the aforementioned short side and is formed on the aforementioned short side. A central portion; and four third divided pieces, which are separated by the third line and the fourth line, and are formed at corners of the dielectric window, and these divided pieces may be formed by the metal The support beam is divided.
在本發明的第2觀點中,係提供一種感應耦合電漿處理裝置,係對矩形狀之基板施予感應耦合電漿處理的感應耦合電漿處理裝置,其特徵係具備:處理室,收容基板;高頻天線,用於在配置有前述處理室內之基板的區域產生感應耦合電漿;介電質窗,呈矩形狀,被配置於產生有前述感應耦合電漿之電漿產生區域與前述高頻天線之間,並對應於基板而設;及氣體供給部,對前述處理室供給用於形成電漿的處理氣體,前述高頻天線係以在對應於前述介電質窗之面內環繞的方式而設,前述介電質窗係藉由金屬製之第1支撐樑來進行分割為複數個分割片的第1分割,使形成含有包含長邊之第1分割片與包含短邊之第2分 割片,且前述第2分割片之徑向的寬度a與前述第1分割片之徑向的寬度b之比a/b係分割為0.8以上1.2以下之範圍,而且,前述複數個分割片的至少一部份係藉由通過前述介電質窗中心而設之金屬製的第2支撐樑來進行第2分割,前述第1支撐樑及前述第2支撐樑係具有處理氣體流通的氣體流路與吐出處理氣體的複數個氣體吐出孔,且具有前述氣體供給部的功能。 According to a second aspect of the present invention, an inductively coupled plasma processing apparatus is provided. The inductively coupled plasma processing apparatus applies an inductively coupled plasma processing to a rectangular substrate, and is characterized by including a processing chamber and a substrate. ; A high-frequency antenna for generating an inductive coupling plasma in an area where the substrate in the processing chamber is arranged; a dielectric window, which is rectangular in shape, is arranged in the plasma generating area where the inductive coupling plasma is generated and the high And a gas supply unit that supplies a processing gas for forming a plasma to the processing chamber, and the high-frequency antenna surrounds a surface corresponding to the dielectric window. The dielectric window is first divided into a plurality of divided pieces by a first supporting beam made of metal, so that a first divided piece containing a long side and a second divided piece including a short side are formed. Minute Cut, and the ratio a / b of the radial width a of the second divided piece to the radial width b of the first divided piece is divided into a range of 0.8 or more and 1.2 or less. At least a part of the second support beam is made by a second support beam made of metal passing through the center of the dielectric window. The first support beam and the second support beam have a gas flow path through which a process gas flows. A plurality of gas discharge holes and a plurality of gas discharge holes for discharging the processing gas have the function of the gas supply unit.
在上述第2觀點之感應耦合電漿處理裝置中,前述第2支撐樑係能夠十字狀地設成通過前述介電質窗的中心。 In the inductively coupled plasma processing apparatus according to the second aspect, the second support beam system can be provided in a cross shape so as to pass through the center of the dielectric window.
又,前述介電質窗係在將從其4個角落朝向45°±6°方向延伸的線設為第1線,將連結前述第1線中分別夾著前述短邊之2條線所交會的2個交點且與前述長邊平行的線設為第2線時,前述第1支撐樑係可形成為沿著前述第1線及前述第2線而設,且藉由前述第1支撐樑,分割為前述第1分割片與前述第2分割片的構成。 The dielectric window is a line extending from the four corners in a direction of 45 ° ± 6 °, and the first line is intersected by two lines connecting the first line with the short sides interposed therebetween. When a line parallel to the two long intersections is set as the second line, the first support beam system may be formed along the first line and the second line, and the first support beam may be formed by the first support beam. Is divided into a structure of the first divided piece and the second divided piece.
又,前述介電質窗,係前述長邊及前述短邊藉由前述第1支撐樑分別設為3分割以上,在前述第1支撐樑及前述第2支撐樑中,可形成為不會存在有沿著前述高頻天線而產生之閉迴路電路的構成。 In addition, the dielectric window may be formed by dividing the long side and the short side by three or more by the first supporting beam, and the first supporting beam and the second supporting beam may be formed so as not to exist. It has a configuration of a closed-loop circuit generated along the high-frequency antenna.
該情況下,在將從前述介電質窗的4個角落朝向45°±6°方向延伸的線設為第1線,將連結前述第1線中分別夾著前述短邊之2條線所交會的2個第1交點且與前述長邊平行的線設為第2線,將一對長邊分別3分割的線設為第 3線,將一對短邊分別3分割的線設為第4線,將前述第1線與前述第3線與前述第4線的交點設為第2交點時,前述介電質窗係具有:2個前述第1分割片,以前述第2線、從一方之前述長邊延伸的2條前述第3線、前述第1線之前述第1交點與前述第2交點之間的部份來區隔,且包含前述長邊而形成於前述長邊的中央部;2個前述第2分割片,以從一方之前述短邊延伸的2條前述第4線、前述第1線之前述第1交點與前述第2交點之間的部份來區隔,且包含前述短邊而形成於前述短邊的中央部;及4個第3分割片,以前述第3線與前述第4線來區隔,形成於前述介電質窗的角部,該些分割係可形成為藉由前述第1支撐樑來予以分割的構成。 In this case, a line extending from the four corners of the dielectric window in the direction of 45 ° ± 6 ° is set as the first line, and the two lines connecting the first line with the short sides are sandwiched therebetween. A line that intersects the two first intersections and is parallel to the long side is referred to as a second line, and a pair of lines with three long sides respectively divided as the first line 3 lines, and a pair of 3 lines divided by a short side is set as a 4th line, and when the intersection of the 1st line, the 3rd line, and the 4th line is a 2nd intersection, the dielectric window system has : The two aforementioned first divisions are based on the aforementioned second line, two aforementioned third lines extending from one of the aforementioned long sides, and a portion between the aforementioned first intersection point and the aforementioned second intersection point of the aforementioned first line Is divided, and includes the long side and is formed at the center of the long side; the two second division pieces are formed by two of the fourth line and the first line of the first line extending from one of the short sides The part between the intersection point and the second intersection point is distinguished, and the short side is formed at the center of the short side including the short side; and 4 third divisions are divided by the 3rd line and the 4th line The partitions are formed at the corners of the dielectric window, and the divisions may be formed by the division by the first support beam.
在上述第1及第2觀點的感應耦合電漿處理裝置中,前述高頻天線係能夠構成將在對應於前述介電質窗之面內沿著前述介電質窗之周方向環繞而設的複數個天線部配置成同心狀。又,在前述高頻天線施加1MHz以上27MHz以下的高頻為較佳。 In the inductively-coupled plasma processing apparatus according to the first and second aspects, the high-frequency antenna may be configured to surround a dielectric window in a plane corresponding to a circumferential direction of the dielectric window. The plurality of antenna portions are arranged concentrically. It is preferable that a high frequency of 1 MHz to 27 MHz is applied to the high frequency antenna.
根據本發明之第1觀點,呈矩形狀的介電質窗係藉由金屬製之支撐樑分割為複數個分割片,使形成含有包含長邊之第1分割片與包含短邊之第2分割片,且第2分割片之徑向的寬度a與第1分割片之徑向的寬度b之比a/b係分割為0.8以上1.2以下之範圍。因此,能夠對大型被處理 基板使用分割型的介電質窗進行均勻的電漿處理。 According to the first aspect of the present invention, the rectangular dielectric window is divided into a plurality of divided pieces by a metal supporting beam, so that a first divided piece including a long side and a second divided portion including a short side are formed. And the ratio a / b of the width a in the radial direction of the second divided piece to the width b in the radial direction of the first divided piece is divided into a range of 0.8 or more and 1.2 or less. Therefore, it is possible to process large The substrate is uniformly plasma-treated using a divided dielectric window.
根據本發明之第2觀點,呈矩形狀的介電質窗係藉由金屬製之第1支撐樑進行分割成複數個分割片的第1分割,使形成含有包含長邊之第1分割片與包含短邊之第2分割片,且第2分割片之徑向的寬度a與第1分割片之徑向的寬度b之比a/b係被分割為0.8以上1.2以下的範圍,且,複數個分割片的至少一部份係藉由通過介電質窗中心而設的金屬製之第2支撐樑進行第2分割,第1支撐樑及第2支撐樑係構成為具有處理氣體流通的氣體流路與吐出處理氣體的複數個氣體吐出孔,且具有氣體供給部的功能。如此一來,在使用分割型的介電質窗時,由於第1支撐樑不會交叉於介電質窗的中心,因此,即使以從支撐樑供給足夠之處理氣體的方式來設置通過介電質窗之中心的第2支撐樑,亦能夠避免中央部的電漿密度下降。 According to a second aspect of the present invention, the dielectric window having a rectangular shape is divided into a plurality of divided pieces by a first supporting beam made of metal, and a first divided piece including a long side and a first divided piece are formed. The second divided piece including the short side, and the ratio a / b of the radial width a of the second divided piece to the radial width b of the first divided piece is divided into a range of 0.8 or more and 1.2 or less. At least a part of each of the divided pieces is secondly divided by a second supporting beam made of metal provided through the center of the dielectric window, and the first supporting beam and the second supporting beam are configured to have a process gas flow. The flow path and a plurality of gas discharge holes through which the processing gas is discharged have the function of a gas supply unit. In this way, when a divided dielectric window is used, the first support beam does not cross the center of the dielectric window. Therefore, even if a sufficient processing gas is supplied from the support beam, the pass dielectric is provided. The second support beam in the center of the mass window can also prevent the plasma density from decreasing in the center.
1‧‧‧本體容器 1‧‧‧Body Container
2‧‧‧介電質窗 2‧‧‧ Dielectric window
3‧‧‧天線室 3‧‧‧ Antenna Room
4‧‧‧處理室 4‧‧‧ treatment room
5‧‧‧金屬支撐棚架 5‧‧‧ metal support scaffold
6,6a,6b‧‧‧金屬支撐樑 6, 6a, 6b ‧‧‧ metal support beam
13‧‧‧高頻天線 13‧‧‧HF Antenna
13a‧‧‧外側天線部 13a‧‧‧outer antenna section
13b‧‧‧中間天線部 13b‧‧‧Intermediate antenna section
13c‧‧‧內側天線部 13c‧‧‧Inner antenna section
51‧‧‧第1線 51‧‧‧line 1
52‧‧‧第2線 52‧‧‧Line 2
53‧‧‧第3線 53‧‧‧3rd line
54‧‧‧第4線 54‧‧‧line 4
201‧‧‧長邊側分割片 201‧‧‧ Long Side Side Split
202‧‧‧短邊側分割片 202‧‧‧Short side split
203‧‧‧長邊中央分割片 203‧‧‧Long Side Central Segment
204‧‧‧短邊中央分割片 204‧‧‧ Short Side Central Segment
205‧‧‧角隅分割片 205‧‧‧corner split
G‧‧‧基板(矩形基板) G‧‧‧ substrate (rectangular substrate)
[圖1]概略地表示本發明之第1實施形態之感應耦合電漿處理裝置的剖面圖。 [FIG. 1] A cross-sectional view schematically showing an inductively coupled plasma processing apparatus according to a first embodiment of the present invention.
[圖2]表示使用於圖1之感應耦合電漿處理裝置之介電質窗的平面圖。 [Fig. 2] A plan view showing a dielectric window used in the inductively coupled plasma processing apparatus of Fig. 1. [Fig.
[圖3]表示使用於圖1之感應耦合電漿處理裝置之介電質窗及高頻天線的平面圖。 [Fig. 3] A plan view showing a dielectric window and a high-frequency antenna used in the inductively coupled plasma processing apparatus of Fig. 1. [Fig.
[圖4]表示分割為放射狀之介電質窗的模式圖。 Fig. 4 is a schematic diagram showing a dielectric window divided into radial shapes.
[圖5]表示使用在金屬支撐樑設置從中央放射狀延伸之部份而形成8分割的介電質窗及環繞的高頻天線進行蝕刻時之蝕刻分布的圖。 [Fig. 5] Fig. 5 is a diagram showing an etching distribution when an eight-division dielectric window and a surrounding high-frequency antenna are formed by providing a metal support beam with a portion extending radially from the center.
[圖6]用於說明使用於本發明之第1實施形態之感應耦合電漿處理裝置之介電質窗之分割狀態的模式圖。 [Fig. 6] A schematic diagram for explaining a division state of a dielectric window used in the inductively coupled plasma processing apparatus according to the first embodiment of the present invention.
[圖7]表示使用於圖1之感應耦合電漿處理裝置之介電質窗之其他例的平面圖。 [Fig. 7] A plan view showing another example of a dielectric window used in the inductively coupled plasma processing apparatus of Fig. 1. [Fig.
[圖8]表示圖7之介電質窗及高頻天線的平面圖。 [Fig. 8] A plan view showing the dielectric window and the high-frequency antenna of Fig. 7. [Fig.
[圖9]表示使用於本發明之第2實施形態之感應耦合電漿處理裝置之介電質窗的平面圖。 [Fig. 9] A plan view showing a dielectric window used in an inductively coupled plasma processing apparatus according to a second embodiment of the present invention.
[圖10]表示使用於本發明之第2實施形態之感應耦合電漿處理裝置之介電質窗之其他例的平面圖。 10 is a plan view showing another example of a dielectric window used in an inductively coupled plasma processing apparatus according to a second embodiment of the present invention.
[圖11]表示高頻天線之其他例的平面圖。 11 is a plan view showing another example of a high-frequency antenna.
[圖12](A)圖係表示參考例之金屬窗的平面圖,(B)~(D)圖係表示使用於本發明之實施形態之介電質窗之例子的平面圖。 [Fig. 12] (A) is a plan view showing a metal window of a reference example, and (B) to (D) are plan views showing an example of a dielectric window used in the embodiment of the present invention.
[圖13]表示電場強度比及角度之窗寬度比依存性的圖。 FIG. 13 is a graph showing dependency of an electric field intensity ratio and an angle window width ratio.
[圖14](A)~(C)圖係表示使用於圖1之感應耦合電漿處理裝置之介電質窗之另外其他例的平面圖。 [Fig. 14] Figs. (A) to (C) are plan views showing still other examples of dielectric windows used in the inductively coupled plasma processing apparatus of Fig. 1. [Fig.
[圖15](A)~(C)圖係表示使用於本發明之第2實施形態之感應耦合電漿處理裝置之介電質窗之其他例的平面圖。 [Fig. 15] (A) to (C) are plan views showing other examples of the dielectric window used in the inductively coupled plasma processing apparatus of the second embodiment of the present invention.
[圖16](A)~(C)圖係表示使用於本發明之第2實施形態之感應耦合電漿處理裝置之介電質窗之另外其他例的平面 圖。 [Fig. 16] (A) to (C) are planes showing other examples of the dielectric window used in the inductively coupled plasma processing apparatus of the second embodiment of the present invention. Illustration.
[圖17]表示以往之介電質窗的圖。 17 is a view showing a conventional dielectric window.
[圖18]表示在以往的介電質窗追加具有淋浴功能之金屬支撐樑之例子的圖。 18 is a view showing an example of adding a metal support beam having a shower function to a conventional dielectric window.
以下,參閱添加圖式對本發明之實施形態進行說明。 Hereinafter, embodiments of the present invention will be described with reference to the attached drawings.
<第1實施形態> <First Embodiment>
圖1係概略地表示本發明之第1實施形態之感應耦合電漿處理裝置的剖面圖。圖1所示之感應耦合電漿處理裝置,係例如可使用於在矩形基板例如FPD用玻璃基板上形成薄膜電晶體時的金屬膜、ITO膜、氧化膜等的蝕刻,或光阻膜的灰化處理等的電漿處理。在此,FPD例如有液晶顯示器(LCD)、電致發光(Electro Luminescence;EL)顯示器、電漿顯示器面板(PDP)等。又,並不限於FPD用玻璃基板,亦可對太陽電池面板用玻璃基板使用上述同樣的電漿處理。 Fig. 1 is a sectional view schematically showing an inductively coupled plasma processing apparatus according to a first embodiment of the present invention. The inductively coupled plasma processing apparatus shown in FIG. 1 can be used, for example, to etch a metal film, an ITO film, an oxide film, or the like when forming a thin-film transistor on a rectangular substrate such as a glass substrate for FPD, or the gray of a photoresist film Plasma treatment. Here, the FPD includes, for example, a liquid crystal display (LCD), an electroluminescence (EL) display, and a plasma display panel (PDP). In addition, the glass substrate for FPD is not limited, and the same plasma treatment may be applied to the glass substrate for solar cell panels.
該電漿處理裝置係具有由導電性材料例如內壁面被陽極氧化處理的鋁所構成的角筒形狀之氣密的本體容器1。該本體容器1係組裝成可分解,且藉由接地線1a進行電性接地。本體容器1係藉由與本體容器1絕緣而形成之矩形狀的介電質窗2上下區隔成天線室3及處理室4。介電 質窗2係構成處理室4的頂壁。 This plasma processing apparatus is an airtight body container 1 having a rectangular tube shape made of a conductive material such as aluminum whose inner wall surface is anodized. The main body container 1 is assembled to be disassembled, and is electrically grounded through a ground wire 1a. The main body container 1 is a rectangular dielectric window 2 formed by being insulated from the main body container 1, and is partitioned into an antenna chamber 3 and a processing chamber 4. Dielectric The quality window 2 constitutes the top wall of the processing chamber 4.
在天線室3的側壁3a與處理室4的側壁4a之間,設有突出至本體容器1內側之金屬製的支撐棚架(金屬支撐棚架)5及金屬製的支撐樑(金屬支撐樑)6。金屬支撐棚架5及金屬支撐樑6,係例如由鋁所構成。介電質窗2係如後述,分割成由氧化鋁等陶瓷或石英等的介電質所形成的介電質窗片,而在分割的狀態下,被金屬支撐棚架5及金屬支撐樑6所支撐。金屬支撐樑6,係藉由複數根懸吊具(未圖示)而成為吊掛在本體容器1之頂棚的狀態。金屬支撐棚架5及金屬支撐樑6,係亦可被介電質構件被覆。 Between the side wall 3a of the antenna chamber 3 and the side wall 4a of the processing chamber 4, a metal support scaffold (metal support scaffold) 5 and a metal support beam (metal support beam) protruding to the inside of the main body container 1 are provided. 6. The metal support scaffold 5 and the metal support beam 6 are made of, for example, aluminum. The dielectric window 2 is divided into dielectric windows formed by a dielectric such as ceramics such as alumina or a dielectric such as quartz, as described later, and in a divided state, it is supported by a metal frame 5 and a metal support beam 6 Supported by. The metal supporting beam 6 is suspended from the ceiling of the main body container 1 by a plurality of hangers (not shown). The metal supporting scaffold 5 and the metal supporting beam 6 may also be covered with a dielectric member.
金屬支撐樑6係亦可兼作為處理氣體供給用的淋浴頭框體。金屬支撐樑6兼作為淋浴頭框體時,如圖示般,在金屬支撐樑6的內部形成有平行於被處理基板之被處理面而延伸的氣體流路8。在氣體流路8中,形成有對處理室4內噴出處理氣體之複數個氣體吐出孔8a。氣體流路8係從處理氣體供給系統20經由氣體供給管20a來供給處理氣體,從氣體吐出孔8a對處理室4之內部吐出處理氣體。另外,處理氣體係亦能夠改用從支撐樑6予以供給,或同時設置與介電質窗2個別而設之陶瓷製的淋浴構件來吐出處理氣體。 The metal support beam 6 may also serve as a shower head frame for processing gas supply. When the metal support beam 6 also serves as the shower head frame, as shown in the figure, a gas flow path 8 is formed inside the metal support beam 6 and extends parallel to the processing surface of the substrate to be processed. A plurality of gas discharge holes 8 a are formed in the gas flow path 8 to discharge the processing gas into the processing chamber 4. The gas flow path 8 supplies a processing gas from the processing gas supply system 20 through a gas supply pipe 20a, and discharges the processing gas into the processing chamber 4 from the gas discharge hole 8a. In addition, the processing gas system can be replaced by a supply from the support beam 6 or a ceramic shower member provided separately from the dielectric window 2 at the same time to discharge the processing gas.
在介電質窗2上的天線室3內,配置有面對介電質窗2的高頻天線13。高頻天線13係藉由由絕緣構件所構成的隔板14來與介電質窗2隔開而配置。 In the antenna chamber 3 on the dielectric window 2, a high-frequency antenna 13 facing the dielectric window 2 is arranged. The high-frequency antenna 13 is separated from the dielectric window 2 by a partition 14 made of an insulating member.
高頻天線13係經由供電構件15、供電線16、 匹配器17,連接有第1高頻電源18。且,電漿處理的期間,從第1高頻電源18經由匹配器17、供電線16及供電構件15供給例如13.56MHz之高頻電力至高頻天線13,藉此,在處理室4內的電漿產生區域形成感應電場,藉由該感應電場從複數個氣體吐出孔8a供給的處理氣體會在處理室4內的電漿產生區域被電漿化。 The high-frequency antenna 13 is connected via a power supply member 15, a power supply line 16, The matching device 17 is connected to a first high-frequency power supply 18. During the plasma processing, high-frequency power, such as 13.56 MHz, is supplied from the first high-frequency power source 18 to the high-frequency antenna 13 through the matcher 17, the power supply line 16, and the power supply member 15. An induced electric field is formed in the plasma generating region of the electrode, and the processing gas supplied from the plurality of gas discharge holes 8 a by the induced electric field is plasmatized in the plasma generating region in the processing chamber 4.
在處理室4內的下方,以夾著介電質窗2且與高頻天線13對向的方式設有用於載置作為被處理基板之矩形狀的FPD用玻璃基板(以下簡稱基板)G的載置台23。載置台23係以導電性材料,例如表面被陽極氧化處理的鋁所構成。被載置於載置台23的基板G,係藉由靜電夾盤(未圖示)被吸附保持。 A rectangular glass substrate for FPD (hereinafter referred to as a substrate) G is disposed below the processing chamber 4 so as to face the high-frequency antenna 13 with the dielectric window 2 interposed therebetween. Mounting table 23. The mounting table 23 is made of a conductive material such as aluminum whose surface is anodized. The substrate G placed on the mounting table 23 is sucked and held by an electrostatic chuck (not shown).
載置台23是被收納於絕緣體框24內,且被中空的支柱25所支撐。支柱25係一面維持氣密狀態一面貫通本體容器1的底部,且被配設在本體容器1外的升降機構(未圖示)所支撐,在進行基板G的搬出入時藉由升降機構來將載置台23驅動於上下方向。另外,在收納載置台23的絕緣體框24與本體容器1的底部之間,配設有氣密地包圍支柱25的波紋管26,藉此,即使載置台23的上下動作,亦可保證處理容器4內的氣密性。並且,在處理室4的側壁4a設有用於搬入搬出基板G的搬入搬出口27a及予以開關的閘閥27。 The mounting table 23 is housed in the insulator frame 24 and is supported by a hollow pillar 25. The pillar 25 penetrates the bottom of the main body container 1 while maintaining an air-tight state, and is supported by a lifting mechanism (not shown) arranged outside the main body container 1. The mounting table 23 is driven in the vertical direction. In addition, a corrugated tube 26 is provided between the insulator frame 24 accommodating the mounting table 23 and the bottom of the main body container 1 so as to air-tightly surround the support post 25, so that the processing container can be secured even if the mounting table 23 is moved up and down. Air tightness within 4 Further, a side wall 4a of the processing chamber 4 is provided with a loading / unloading port 27a for loading and unloading the substrate G and a gate valve 27 for opening and closing.
載置台23係藉由設於中空之支柱25內的供電線25a經由匹配器28而連接第2高頻電源29。該第2高頻電 源29,係在進行電漿處理期間,將偏壓用的高頻電力例如頻率為3.2MHz的高頻電力施加於載置台23。藉由由該偏壓用的高頻電力產生的自給偏壓,使在處理室4內產生之電漿中的離子有效地被引入至基板G。 The mounting table 23 is connected to a second high-frequency power source 29 via a power supply line 25 a provided in the hollow pillar 25 via a matching device 28. The second high-frequency power The source 29 is configured to apply high-frequency power for bias voltage, for example, high-frequency power having a frequency of 3.2 MHz, to the mounting table 23 during the plasma processing. By the self-supplied bias generated by the high-frequency power for the bias, ions in the plasma generated in the processing chamber 4 are efficiently introduced into the substrate G.
而且,在載置台23內,為了控制基板G的溫度,而設有由陶瓷加熱器等的加熱手段或冷媒流路等所構成的溫度控制機構、及溫度感測器(皆未圖示)。對於該些機構或構件的配管或配線,皆通過中空的支柱25來導出至本體容器1外。 In addition, in the mounting table 23, in order to control the temperature of the substrate G, a temperature control mechanism including a heating means such as a ceramic heater, a refrigerant flow path, and the like, and a temperature sensor (both not shown) are provided. The piping or wiring of these mechanisms or components is led out of the main body container 1 through the hollow pillar 25.
在處理室4的底部,經由排氣管31來連接包含真空泵等的排氣裝置30。藉由該排氣裝置30來對處理室4進行排氣,電漿處理中,處理室4內會被設定維持於預定的真空環境(例如1.33Pa)。 An exhaust device 30 including a vacuum pump and the like is connected to the bottom of the processing chamber 4 via an exhaust pipe 31. The exhaust chamber 30 is used to exhaust the processing chamber 4. During the plasma processing, the inside of the processing chamber 4 is set to be maintained at a predetermined vacuum environment (for example, 1.33 Pa).
在被載置於載置台23之基板G的背面側形成有冷卻空間(未圖示),設有用於供給He氣體(作為一定之壓力的熱傳達用氣體)的He氣體流路41。藉由如此在基板G的背面側供給熱傳達用氣體,可在真空下迴避基板G的溫度上昇或溫度變化。 A cooling space (not shown) is formed on the back side of the substrate G placed on the mounting table 23, and a He gas flow path 41 for supplying He gas (a heat transfer gas as a constant pressure) is provided. By supplying the heat-transmitting gas to the back surface of the substrate G in this manner, it is possible to avoid a temperature rise or temperature change of the substrate G under vacuum.
該電漿處理裝置之各構成部,係形成為被連接至由微處理器(電腦)所構成的控制部100來予以控制的構成。又,在控制部100連接由鍵盤或顯示器等所構成之使用者介面101,該鍵盤是供操作員進行為了管理電漿處理裝置而輸入指令等的輸入操作,該顯示器是使電漿處理裝置的運轉狀況可視化顯示。而且,在控制部100連接有 記憶部102,該記憶部102是儲存有用於藉由控制部100的控制來實現在電漿處理裝置所被實行的各種處理之控制程式,或用於因應處理條件來使處理實行於電漿處理裝置的各構成部之程式亦即處理程式。處理程式係被記憶於記憶部102中的記憶媒體。記憶媒體係亦可為內藏於電腦之硬碟或半導體記憶體,或亦可為CDROM、DVD、快閃記憶體等的可攜帶性者。又,亦可從其他裝置例如經由專線來使處理程式適當傳送。且,因應所需,以來自使用者介面101的指示等,從記憶部102呼叫任意之處理程式,並使實行於控制部100,在控制部100的控制下,進行在電漿處理裝置中所期望的處理。 Each component of the plasma processing apparatus is configured to be controlled by being connected to a control unit 100 including a microprocessor (computer). In addition, a user interface 101 including a keyboard or a display is connected to the control unit 100. The keyboard is used by an operator to perform input operations such as inputting instructions for managing a plasma processing apparatus. Visual display of operating conditions. The control unit 100 is connected to The memory unit 102 stores a control program for realizing various processes executed by the plasma processing apparatus under the control of the control unit 100, or is used to execute the process in the plasma process in accordance with the processing conditions. The program of each component of the device is the processing program. The processing program is a storage medium stored in the storage unit 102. The storage medium can also be a hard disk or semiconductor memory built into the computer, or it can be a portable device such as CDROM, DVD, flash memory, etc. The processing program may be appropriately transmitted from another device, for example, via a dedicated line. In addition, according to requirements, an instruction from the user interface 101 is used to call an arbitrary processing program from the memory unit 102, and the program is executed by the control unit 100, and is executed in the plasma processing apparatus under the control of the control unit 100. Expected processing.
接下來,參閱圖2及圖3對介電質窗2及高頻天線13進行說明。 Next, the dielectric window 2 and the high-frequency antenna 13 will be described with reference to FIGS. 2 and 3.
圖2係表示介電質窗,圖3係表示介電質窗及高頻天線的平面圖。 FIG. 2 shows a dielectric window, and FIG. 3 shows a plan view of the dielectric window and a high-frequency antenna.
如圖2所示,矩形狀的介電質窗2係具有長邊2a與短邊2b。介電質窗2係藉由金屬支撐樑6分割成包含長邊2a之2個長邊側分割片201與包含短邊2b之2個短邊側分割片202,且長邊側分割片201與短邊側分割片202係以使徑向之寬度相等的方式來予以分割。 As shown in FIG. 2, the rectangular dielectric window 2 has a long side 2 a and a short side 2 b. The dielectric window 2 is divided by the metal supporting beam 6 into two long-side-side divided pieces 201 including the long side 2a and two short-side-side divided pieces 202 including the short side 2b, and the long-side side divided pieces 201 and The short-side divided piece 202 is divided so that the widths in the radial direction are equal.
具體而言,介電質窗2係在將從其4個角落朝向45°的方向延伸之4條線設為第1線51,將連結第1線51中分別夾著短邊2b之2條線所交會的2個交點P且與長邊平行的線設成第2線52時,藉由第1線51及第2線52分割為2個之 長邊側分割片201與2個之短邊側分割片202。在包含第1線51及第2線52的預定寬度存在有金屬支撐樑6,長邊側分割片201與短邊側分割片202係被金屬支撐樑6所支撐。 Specifically, the dielectric window 2 is a first line 51 with four lines extending in a direction of 45 ° from its four corners, and two short lines 2b are connected to the first line 51 respectively. When the two intersection points P intersected by the line and the line parallel to the long side are set as the second line 52, the first line 51 and the second line 52 are divided into two. The long-side divided piece 201 and the two short-side divided pieces 202. A metal support beam 6 exists at a predetermined width including the first line 51 and the second line 52, and the long-side divided piece 201 and the short-side divided piece 202 are supported by the metal supporting beam 6.
高頻天線13係以在介電質窗2的面內沿周方向環繞的方式予以設置,在本例中,在徑向隔著間隔同心狀地具有環繞3圈的外側天線部13a與中間天線部13b與內側天線部13c之天線部,任一輪廓皆形成與介電質窗2相同的矩形狀。在本例中,該些天線部係形成為環狀。 The high-frequency antenna 13 is provided so as to surround the dielectric window 2 in a circumferential direction. In this example, the outer antenna portion 13a and the intermediate antenna are arranged concentrically at three intervals in the radial direction. Each of the antenna portions of the portion 13 b and the inner antenna portion 13 c is formed in the same rectangular shape as the dielectric window 2. In this example, the antenna portions are formed in a loop shape.
在處理室4內,在高頻天線13之天線線正下方的空間雖產生有電漿,但此時,由於因應於高頻天線13之天線線正下方之各位置中的電場強度,具有高電漿密度區域與低電漿密度區域的分佈,因此,使高頻天線13形成為在徑向隔著間隔具有環繞3圈的外側天線部13a與中間天線部13b與內側天線部13c之天線部者,而能夠調整該些阻抗並獨立控制電流值,且控制作為感應耦合電漿之全體的密度分布。 Although plasma is generated in the space immediately below the antenna line of the high-frequency antenna 13 in the processing chamber 4, at this time, due to the electric field intensity in each position directly below the antenna line of the high-frequency antenna 13, it has a high level. The distribution of the plasma density area and the low plasma density area. Therefore, the high-frequency antenna 13 is formed as an antenna portion having an outer antenna portion 13a, a middle antenna portion 13b, and an inner antenna portion 13c that surrounds three turns in a radial interval. Alternatively, these impedances can be adjusted and the current value can be controlled independently, and the density distribution of the entire inductively coupled plasma can be controlled.
另外,介電質窗2的分割形態或高頻天線13的形狀只不過是例示,如後述,可使用各種樣態。 In addition, the divided form of the dielectric window 2 or the shape of the high-frequency antenna 13 is merely an example, and various forms may be used as described later.
接下來,說明使用如以上所構成之感應耦合電漿處理裝置,對基板G施予電漿處理例如電漿蝕刻處理時之處理動作。 Next, a description will be given of a processing operation when the substrate G is subjected to a plasma treatment, such as a plasma etching treatment, using the inductively-coupled plasma treatment apparatus configured as described above.
首先,在將閘閥27打開的狀態下,從搬入搬出口27a藉由搬送機構(未圖示)將基板G搬入至處理室4內並載置於載置台23之載置面後,藉由靜電夾盤(未圖示)將 基板G固定於載置台23上。接下來,使從處理氣體供給系統20供給至處理室4內的處理氣體從兼作為淋浴頭框體之金屬支撐樑6之氣體吐出孔8a吐出至處理室4內,並透過藉由排氣裝置30經由排氣管31對處理室4內進行真空排氣,將處理室內維持於例如0.66~26.6Pa左右之壓力環境。 First, in a state where the gate valve 27 is opened, the substrate G is transferred into the processing chamber 4 from the loading / unloading port 27a by a transfer mechanism (not shown), and placed on the mounting surface of the mounting table 23, and then electrostatically charged. The chuck (not shown) will The substrate G is fixed on the mounting table 23. Next, the processing gas supplied into the processing chamber 4 from the processing gas supply system 20 is discharged into the processing chamber 4 from the gas discharge hole 8a of the metal supporting beam 6 which also serves as the shower head frame, and passes through the exhaust device. 30 evacuates the inside of the processing chamber 4 through the exhaust pipe 31, and maintains the processing chamber at a pressure environment of, for example, about 0.66 to 26.6 Pa.
又,此時,在基板G之背面側的冷卻空間中,為了迴避基板G的溫度上昇或溫度變化,而經由He氣體流路41供給作為熱傳達用氣體之He氣體。 At this time, in a cooling space on the rear surface side of the substrate G, in order to avoid temperature rise or temperature change of the substrate G, He gas as a heat transfer gas is supplied through the He gas flow path 41.
接下來,從高頻電源18將例如1MHz以上27MHz以下之高頻施加至高頻天線13,藉此,經由介電質窗2在處理室4內產生均勻的感應電場。如此一來,藉由所產生的感應電場,在處理室4內的處理氣體會電漿化,而產生高密度的感應耦合電漿。藉由該電漿,對基板G進行作為電漿處理之例如電漿蝕刻處理。 Next, a high frequency, such as 1 MHz to 27 MHz, is applied from the high frequency power source 18 to the high frequency antenna 13, thereby generating a uniform induced electric field in the processing chamber 4 through the dielectric window 2. In this way, with the generated induced electric field, the processing gas in the processing chamber 4 is plasmatized, and a high-density inductively coupled plasma is generated. With this plasma, the substrate G is subjected to a plasma treatment such as a plasma etching process.
在該情況下發現了,隨著介電質窗2的大型化,雖被分割成複數個介電質窗片,但,此時若將介電質窗2分割成放射狀,則感應電場的電場強度分布會變得不均勻而電漿處理的均勻性會變差。 In this case, it was found that, as the dielectric window 2 becomes larger, it is divided into a plurality of dielectric windows. However, at this time, if the dielectric window 2 is divided into radial shapes, the electric field is induced. The electric field intensity distribution becomes uneven and the uniformity of the plasma treatment becomes worse.
關於該觀點,參照圖4之模式圖進行說明。圖4係表示分割為放射狀之介電質窗的模式圖。在圖4中,為了方便起見,將高頻天線13描繪成2圈環狀天線,省略金屬支撐樑6。如圖4所示,在將矩形狀的介電質窗2進行典型之放射狀分割亦即對角線分割的情況下,包含長邊2a之長邊側分割片201'之徑向的寬度(亦即從介電質窗2之中心 起至長邊2a的距離)係將短邊2b的長度設為B時形成為B/2。另一方面,包含短邊2b之短邊側分割片區域202'之徑向的寬度(亦即從介電質窗2之中心起至短邊2b的距離),係將長邊2a之長度設為A時形成為A/2。因此,使短邊側分割片202'之徑向的寬度形成為大於長邊側分割片201'之徑向的寬度。在此,由於高頻天線13的圈數在長邊側分割片201'及短邊側分割片202'中是相同的,因此,徑向的寬度越小,將導致對應於長邊側分割片201'之部份其感應電場的電場強度變大。因此,對應於長邊側分割片201'之部份其電流密度會變大且電漿會變強,而電漿的均勻性會下降。 This point will be described with reference to the schematic diagram of FIG. 4. FIG. 4 is a schematic diagram showing a dielectric window divided into radial shapes. In FIG. 4, for convenience, the high-frequency antenna 13 is depicted as a two-loop loop antenna, and the metal support beam 6 is omitted. As shown in FIG. 4, in a case where the rectangular dielectric window 2 is subjected to a typical radial division, that is, a diagonal division, the radial width of the long-side-side divided piece 201 ′ including the long side 2 a ( I.e. from the center of dielectric window 2 The distance from the long side 2a) is B / 2 when the length of the short side 2b is set to B. On the other hand, the radial width of the short-side-side divided piece region 202 'including the short side 2b (that is, the distance from the center of the dielectric window 2 to the short side 2b) is the length of the long side 2a. When it is A, it becomes A / 2. Therefore, the width in the radial direction of the short-side-side divided piece 202 'is formed to be larger than the width in the radial direction of the long-side-side divided piece 201'. Here, since the number of turns of the high-frequency antenna 13 is the same in the long-side divided piece 201 ′ and the short-side divided piece 202 ′, the smaller the radial width, the more the corresponding length of the long-side divided piece will result. The electric field intensity of the 201 'part of the induced electric field becomes large. Therefore, the current density of the portion corresponding to the long-side-side divided piece 201 'becomes larger and the plasma becomes stronger, and the uniformity of the plasma decreases.
如上述,像這樣的問題,係如圖17所示亦同樣會在記載於專利文獻3中的技術時產生,該專利文獻3係利用在金屬支撐樑設置從中央放射狀延伸之部份而形成8分割的介電質窗,使其不構成平行於高頻天線的閉合電路。 As described above, such a problem occurs as shown in FIG. 17 when the technology described in Patent Document 3 is formed. This Patent Document 3 is formed by providing a metal support beam with a portion extending radially from the center. The 8-dimension dielectric window does not constitute a closed circuit parallel to the high-frequency antenna.
實際上,在使用圖17所示之介電質窗及高頻天線的電漿處理裝置中進行蝕刻處理時,基板的蝕刻分布會形成為如圖5所示。圖5係表示將基板G之內側及外側短邊中央部的蝕刻速率分別設為1.00後之各部份之蝕刻速率的樣態,而短邊中央部的蝕刻速率係低於長邊中央部。 Actually, when an etching process is performed in a plasma processing apparatus using the dielectric window and the high-frequency antenna shown in FIG. 17, the etching distribution of the substrate is formed as shown in FIG. 5. FIG. 5 shows a state in which the etching rate of the short side central portion of the inner side and the outer side of the substrate G is set to 1.00, and the short side central portion is lower than the long side central portion.
於此,在本實施形態中,將矩形狀的介電質窗2分割成包含長邊2a之長邊側分割片201與包含短邊2b之短邊側分割片202,且長邊側分割片201與短邊側分割片 202係以徑向的寬度為相等的方式予以分割。具體而言,如圖2所示,介電質窗2係具有:4條第1線51,從其4個角落朝向45°的方向延伸;及第2線52,連結第1線51中分別夾著短邊2b之2條線所交會的2個交點P且與長邊2a平行,藉由該些第1線51及第2線52分割為長邊側分割片201與短邊側分割片202。因此,對應於圖4而模式地表示之圖6般,長邊側分割片201之徑向的寬度及短邊側分割片202之徑向的寬度,皆形成為B/2。因此,由於長邊側分割片201及短邊側分割片202其高頻天線13的圈數相同且徑向的寬度亦相同,因此對應於該些之部份的感應電場之電場強度會相同而能夠形成均勻的電漿。 Here, in this embodiment, the rectangular dielectric window 2 is divided into a long-side divided piece 201 including a long side 2a and a short-side divided piece 202 including a short side 2b, and the long-side divided piece 201 and short side split 202 is divided in such a way that the radial width is equal. Specifically, as shown in FIG. 2, the dielectric window 2 has four first lines 51 extending from four corners in a direction of 45 °, and a second line 52 connecting the first line 51 respectively. The two intersection points P intersected by the two lines of the short side 2b are parallel to the long side 2a, and the first line 51 and the second line 52 are divided into the long-side split piece 201 and the short-side split piece. 202. Therefore, as shown in FIG. 6 which is schematically shown in FIG. 4, the width in the radial direction of the long-side divided piece 201 and the width in the radial direction of the short-side divided piece 202 are both formed as B / 2. Therefore, since the long-side divided piece 201 and the short-side divided piece 202 have the same number of turns of the high-frequency antenna 13 and the same width in the radial direction, the electric field strengths of the induced electric fields corresponding to those portions will be the same. Can form a uniform plasma.
圖7、圖8,係表示使本實施形態應用於不構成有平行於高頻天線之閉合電路的分割態樣之介電質窗的例子。圖7係表示介電質窗的平面圖,圖8係表示介電質窗及高頻天線的平面圖。在該例中,長邊2a及短邊2b係分別被分割成3個,介電質窗2係形成為8分割型,該8分割型係藉由金屬支撐樑6被分割成:2個長邊中央分割片203,形成於相當於長邊中央的部份;2個短邊中央分割片204,形成於相當於短邊中央的部份;及4個角隅分割片205,包含長邊端部及短邊端部。且,長邊中央分割片203與短邊中央分割片204係以徑向的寬度為相等的方式予以分割。長邊2a及短邊2b的分割數係亦可為3個以上。 FIG. 7 and FIG. 8 show examples of applying the present embodiment to a dielectric window that does not constitute a split circuit having a closed circuit parallel to a high-frequency antenna. FIG. 7 is a plan view showing a dielectric window, and FIG. 8 is a plan view showing a dielectric window and a high-frequency antenna. In this example, the long side 2a and the short side 2b are respectively divided into three, and the dielectric window 2 is formed into an 8-divided type. The 8-divided type is divided into two by a metal supporting beam 6: The center edge segment 203 is formed at a portion corresponding to the center of the long side; the two short edge center segments 204 are formed at a portion corresponding to the center of the short side; and the four corner segment pieces 205 include the long side ends. And short side ends. Further, the long-side central divided piece 203 and the short-side central divided piece 204 are divided such that the radial width is equal. The number of divisions of the long side 2a and the short side 2b may be three or more.
具體而言,在將從介電質窗2的4個角落朝向45°方向延伸的線設為第1線51,將連結第1線51中分別夾 著短邊2b之2條線所交會的2個交點P且與長邊平行的線設成第2線52,將一對長邊2a分別3分割的線設為第3線53,將一對短邊2b分別3分割的線設為第4線54,將前述第1線51與前述第3線53與前述第4線54的交點設為交點Q時,介電質窗2係被分割成:2個長邊中央分割片203,以第2線52、從一方之長邊2a延伸的2條第3線53、第1線51之交點P與交點Q之間的部份來區隔;2個短邊中央分割片204,以從一方之短邊2b延伸的2條第4線54、第1線51之交點P與交點Q之間的部份來區隔;及4個角隅分割邊205,以第3線53與第4線54來區隔。在第2線52、第3線53、第4線54、及第1線51的交點P與交點Q之間的部份亦即分割部份中,以預定的寬度存在有金屬支撐樑6,該些分割片係被金屬支撐樑6所支撐。 Specifically, the lines extending from the four corners of the dielectric window 2 in the direction of 45 ° are referred to as first lines 51, and the first lines 51 are connected to each other. A line parallel to the long side and at the two intersection points P intersected by the two lines of the short side 2b is set as the second line 52, and a pair of three lines divided by the long side 2a is set as the third line 53, respectively. When the short side 2b is divided into three lines, the fourth line 54 is used. When the intersection point of the first line 51, the third line 53, and the fourth line 54 is the intersection Q, the dielectric window 2 is divided into : The two long-side central division pieces 203 are separated by the second line 52, the portion between the intersection point P and the intersection point Q of the two third lines 53, the first line 51 extending from one long side 2a; The two short-side central segmentation segments 204 are separated by the portion between the intersection point P and the intersection point Q of the two fourth lines 54 and the first line 51 extending from one short side 2b; and the four corner divisions The side 205 is separated by a third line 53 and a fourth line 54. In the portion between the intersection point P and the intersection point Q of the second line 52, the third line 53, the fourth line 54, and the first line 51, that is, the divided portion, a metal support beam 6 exists with a predetermined width. The divided pieces are supported by the metal support beam 6.
高頻天線13係與圖3相同,同心狀地具有環繞3圈的外側天線部13a與中間天線部13b與內側天線部13c之天線部,任一輪廓皆形成與介電質窗2相同的矩形狀。 The high-frequency antenna 13 is the same as that of FIG. 3, and has three antenna parts that concentrically surround the outer antenna part 13a, the middle antenna part 13b, and the inner antenna part 13c. Any contour is formed into the same rectangle as the dielectric window 2. shape.
在本例中,長邊中央分割片203之徑向的長度及短邊中央分割片204之徑向的長度,皆形成為短邊2b之長度的1/2而使兩者相等。因此,由於長邊中央分割片203及短邊中央分割片204其高頻天線13的圈數相同且徑向的寬度亦相同,因此對應於該些之部份的感應電場之電場強度會相同而能夠形成均勻的電漿。 In this example, the length in the radial direction of the long-side central divided piece 203 and the length in the radial direction of the short-side central divided piece 204 are both formed to be 1/2 of the length of the short side 2b to make them equal. Therefore, since the long-side central divided piece 203 and the short-side central divided piece 204 have the same number of turns of the high-frequency antenna 13 and the same width in the radial direction, the electric field strengths of the induced electric fields corresponding to those portions will be the same. Can form a uniform plasma.
又,如此一來,即使是將介電質窗2的長邊2a及短邊2b分割為3個的分割形態,金屬支撐樑6亦不會構成 有平行於高頻天線13的閉合電路,因此,在金屬支撐樑6並不會產生反電動勢且金屬支撐樑6正下方的電漿不會變弱。 In this way, even if the long side 2a and the short side 2b of the dielectric window 2 are divided into three divided forms, the metal supporting beam 6 does not constitute There is a closed circuit parallel to the high-frequency antenna 13. Therefore, no back electromotive force is generated at the metal support beam 6 and the plasma immediately below the metal support beam 6 does not weaken.
<第2實施形態> <Second Embodiment>
接下來,對本發明之第2實施形態進行說明。 Next, a second embodiment of the present invention will be described.
在第1實施形態中,介電質窗2的金屬支撐樑6並不一定需要具有吐出處理氣體之淋浴頭框體的功能,又,即使金屬支撐樑6具有淋浴頭框體的功能,亦容許附加之陶瓷製的淋浴構件,在本實施形態中,係使第1實施形態的金屬支撐樑構成為淋浴頭框體,且除了附加的金屬支撐樑亦具有構成為僅從金屬支撐樑供給處理氣體的介電質窗。 In the first embodiment, the metal support beam 6 of the dielectric window 2 does not necessarily need to have the function of a shower head frame that discharges a processing gas, and even if the metal support beam 6 has the function of a shower head frame, it is allowed. In the present embodiment, the additional ceramic shower member is configured by using the metal support beam of the first embodiment as a shower head frame, and in addition to the additional metal support beam, it is configured to supply the processing gas only from the metal support beam. Dielectric window.
在第1實施形態中,為了使介電質窗2形成為考慮電漿均勻性的分割態樣,而使用金屬支撐樑6。因此,即使將金屬支撐樑6使用來作為淋浴頭框體,特別是在對應於介電質窗2之中央的部份亦會有處理氣體的供給不足夠的情況。在像這樣的情況下,以往個別設置配置成英國國旗狀之氣體吐出孔之陶瓷製的淋浴構件。 In the first embodiment, a metal support beam 6 is used in order to form the dielectric window 2 in a divided state in consideration of the uniformity of the plasma. Therefore, even if the metal supporting beam 6 is used as the shower head frame, the supply of the processing gas may be insufficient in a portion corresponding to the center of the dielectric window 2 in particular. In such a case, conventionally, a shower member made of ceramics has been separately provided as a British flag-shaped gas discharge hole.
但是,由於陶瓷製的淋浴構件較昂貴,因此成本會上升。又,在處理室內形成有凹凸,故,副產物會變得容易附著且會變得容易產生其剝落所致的微粒。 However, since the ceramic shower member is expensive, the cost increases. In addition, since unevenness is formed in the processing chamber, by-products tend to adhere, and particles due to peeling are easily generated.
因此,在本實施形態中,如圖9所示,將金屬支撐樑使用來作為淋浴頭框體,並可僅從金屬支撐樑供給足夠的處理氣體,除了圖2、3所示之介電質窗2的金屬支 撐樑6,亦使用設置通過中心之十字狀之金屬支撐樑6a的介電質窗2'。 Therefore, in this embodiment, as shown in FIG. 9, a metal supporting beam is used as the shower head frame, and sufficient processing gas can be supplied only from the metal supporting beam, except for the dielectric materials shown in FIGS. 2 and 3. Metal support for window 2 The supporting beam 6 also uses a dielectric window 2 'provided with a cross-shaped metal supporting beam 6a passing through the center.
在該情況下,藉由金屬支撐樑6a,使長邊側分割片201進一步被分割成第1分割片201a及第2分割片201b,使短邊側分割片202進一步被分割成第1分割片202a及第2分割片202b。 In this case, the long-side-side divided piece 201 is further divided into the first divided piece 201a and the second divided piece 201b by the metal supporting beam 6a, and the short-side divided piece 202 is further divided into the first divided piece. 202a and the second segment 202b.
又,圖10係除了作為第1實施形態之其他例之圖7、8所示之介電質窗2的金屬支撐樑6,亦使用設置通過中心之十字狀之金屬支撐樑6a的介電質窗2'之例子。在圖10的例子中,進一步設置有沿著第1線51從交點Q連結介電質窗2'之角部的金屬支撐樑6b。 In addition, FIG. 10 shows the dielectric support 2 of the dielectric window 2 shown in FIGS. 7 and 8 as another example of the first embodiment, and a dielectric provided with a cross-shaped metal support beam 6a passing through the center is also used. Example of window 2 '. In the example of FIG. 10, a metal support beam 6 b is further provided which connects the corners of the dielectric window 2 ′ from the intersection Q along the first line 51.
在圖10的例子中,藉由金屬支撐樑6a,使長邊中央分割片203進一步被分割成第1分割片203a及第2分割片203b,且使短邊中央分割片204進一步被分割成第1分割片204a及第2分割片204b,又,藉由金屬支撐樑6b,使角隅分割片205進一步被分割成第1分割片205a及第2分割片205b。 In the example of FIG. 10, the long-side central divided piece 203 is further divided into a first divided piece 203a and a second divided piece 203b by a metal supporting beam 6a, and the short-side central divided piece 204 is further divided into first pieces. The first divided piece 204a and the second divided piece 204b are further divided into a first divided piece 205a and a second divided piece 205b by a metal support beam 6b.
第1實施形態的介電質窗2,係為使長邊側的分割片與短邊側的分割片之徑向的寬度相同,而在其中央部沿著作為分割線之平行於長邊2a的第2線52設有金屬支撐樑6,在中心處並不存在金屬支撐樑6的交叉部份。因此,即使在該介電質窗2的金屬支撐樑6追加通過中心之十字狀的金屬支撐樑6a而構成介電質窗2',亦不會產生圖18所示般之其中心之金屬支撐樑的集中,且電漿密度不會在 處理室4的中央部下降。又,在圖10的例子中,由於金屬支撐樑6a係被設於與高頻天線13交叉,因此,亦不存在有沿著高頻天線13所產生的閉迴路電路。 The dielectric window 2 of the first embodiment is such that the radial widths of the long-side divided pieces and the short-side divided pieces are the same in the radial direction, and the central portion is parallel to the long side 2a along the division line. The second line 52 is provided with a metal support beam 6, and there is no intersection portion of the metal support beam 6 at the center. Therefore, even if the metal support beam 6 of the dielectric window 2 is added with a cross-shaped metal support beam 6 a at the center to form the dielectric window 2 ′, the center metal support as shown in FIG. 18 is not generated. The beam is concentrated and the plasma density is not The central portion of the processing chamber 4 descends. In the example of FIG. 10, since the metal supporting beam 6 a is provided to cross the high-frequency antenna 13, there is no closed-loop circuit generated along the high-frequency antenna 13.
又,如此一來,藉由附加金屬支撐樑6a、6b,可進一步使介電質窗的分割數增加,而更容易對應伴隨著裝置更大型化所致之介電質窗的大型化。 In addition, by adding the metal supporting beams 6a and 6b, the number of divisions of the dielectric window can be further increased, and it is easier to cope with the enlargement of the dielectric window due to the larger size of the device.
<感應電場之電場強度比> <Induced electric field strength ratio>
接下來,對包含短邊2b之第2分割片202與包含長邊2a之第1分割片201之感應電場的電場強度比進行說明。 Next, the electric field intensity ratio of the induced electric field between the second divided piece 202 including the short side 2b and the first divided piece 201 including the long side 2a will be described.
感應電場之電場強度E係如下述第(1)式,與天線之電流量I與捲繞數n成比例,而與窗寬度(徑向之寬度)d成反比例。 The electric field strength E of the induced electric field is as shown in the following formula (1), which is proportional to the amount of current I of the antenna and the number of windings n, and inversely proportional to the window width (radial width) d.
從第(1)式,可知感應電場之電場強度係因應窗寬度d的寬度而變化。當窗寬度d沿徑向變寬時,與窗寬度d較窄的情況相比,則必須更廣泛地產生電漿。因此,感應電場E之電場強度會減弱,且電漿會減弱。相反地,若窗寬度d沿徑向變窄,則感應電場E之電場強度會增強。 From the expression (1), it can be seen that the electric field strength of the induced electric field changes in accordance with the width of the window width d. When the window width d becomes wider in the radial direction, compared with the case where the window width d is narrower, plasma must be generated more widely. Therefore, the electric field strength of the induced electric field E will weaken, and the plasma will weaken. Conversely, if the window width d becomes narrower in the radial direction, the electric field strength of the induced electric field E will increase.
例如,如圖12(A)所示,第1線51'為對角線狀時,包含短邊2b之第2分割片202'之感應電場E的電場強度為最弱。在圖12(A)所示的例子中,假如將第2分割片202'之窗寬度dB(=a)與第1分割片201'之窗寬度dA(=b)的窗寬度比a/b設為1.3。 For example, as shown in FIG. 12 (A), when the first line 51 ′ is diagonal, the electric field intensity of the induced electric field E of the second divided piece 202 ′ including the short side 2 b is the weakest. In the example shown in FIG. 12 (A), if the window width ratio a / b of the window width dB (= a) of the second divided piece 202 'and the window width dA (= b) of the first divided piece 201' is Set it to 1.3.
以下,將窗寬度比a/b如圖12(B)所示縮短為1.1時,則第2分割片202之窗寬度dB(=a)會變窄,且第2分割片202之電場強度會增強。且,如圖12(C)所示,當窗寬度比a/b變為1時,第2分割片202之電場強度會進一步增強,且第2分割片202及第1分割片201兩者之感應電場E的電場強度會相等。且,如圖12(D)所示,若窗寬度比a/b未滿1例如設為0.9時,則在第2分割片202與第1分割片201其感應電場E的電場強度將逆轉。 Hereinafter, when the window width ratio a / b is shortened to 1.1 as shown in FIG. 12 (B), the window width dB (= a) of the second divided piece 202 becomes narrower, and the electric field strength of the second divided piece 202 becomes smaller. Enhanced. Moreover, as shown in FIG. 12 (C), when the window width ratio a / b becomes 1, the electric field strength of the second divided piece 202 will be further enhanced, and both of the second divided piece 202 and the first divided piece 201 The electric field strengths of the induced electric field E will be equal. As shown in FIG. 12 (D), when the window width ratio a / b is less than 1, for example, 0.9, the electric field intensity of the induced electric field E is reversed in the second divided piece 202 and the first divided piece 201.
包含圖12(A)~(D)所示之長邊2a之第1分割片201'及201的電場強度EA,係EA=I×n/dA…(2) The electric field strength EA of the first divided pieces 201 'and 201 including the long side 2a shown in Figs. 12 (A) to (D) is EA = I × n / dA ... (2)
又,包含短邊2b之第2分割片202'及202的電場強度EB,係EB=I×n/dB…(3) In addition, the electric field intensity EB of the second segment 202 'and 202 including the short side 2b is EB = I × n / dB ... (3)
第2分割片202'及202之電場強度EB與第1分割片201'及201之電場強度EA的比“EB/EA”,係EB/EA=(I×n/dB)/(I×n/dA)…(4) The ratio "EB / EA" of the electric field strength EB of the second divided pieces 202 'and 202 to the electric field strength EA of the first divided pieces 201' and 201 is EB / EA = (I × n / dB) / (I × n /dA)...(4)
在第1分割片201'及201與第2分割片202'及202中,因為天線之電流量I與捲繞數n相等,從而形成EB/EA=(1/dB)/(1/dA)=dA/dB…(5) In the first divided pieces 201 'and 201 and the second divided pieces 202' and 202, since the amount of current I of the antenna and the number of windings n are equal, EB / EA = (1 / dB) / (1 / dA) is formed. = dA / dB ... (5)
從窗寬度dA為第1分割片201'及201之徑向的窗寬度b,相同地窗寬度dB為第2分割片202'及202之徑向的窗寬度a,從而形成EB/EA=b/a…(6) The window width dA is the radial window width b of the first divided pieces 201 'and 201. Similarly, the window width dB is the radial window width a of the second divided pieces 202' and 202, so that EB / EA = b is formed. /a...(6)
如第(6)所示,感應電場E之電場強度比“EB/EA”,係與第1分割片201'及201之徑向的窗寬度a和第2分割片202'及202之徑向之窗寬度b的窗寬度比“a/b”成反比例。 As shown in (6), the electric field strength ratio "EB / EA" of the induced electric field E is the window width a of the radial direction of the first divided pieces 201 'and 201 and the radial direction of the second divided pieces 202' and 202. The window width b of the window width b is inversely proportional to "a / b".
表1係表示形成有窗寬度a、窗寬度b、窗寬度比a/b、電場強度比EB/EA及第1線51'或51與長邊2a之角度θ的表。 Table 1 is a table showing a window width a, a window width b, a window width ratio a / b, an electric field intensity ratio EB / EA, and an angle θ of the first line 51 'or 51 and the long side 2a.
又,圖13係表示電場強度比及角度之窗寬度比依存性的圖。 13 is a graph showing the dependence of the electric field intensity ratio and the window width ratio of the angle.
如圖13所示,隨著窗寬度比a/b之值從“1”偏離,感應電場之電場強度比EB/EA的值亦從“1”偏離。這是表示窗寬度比a/b從“1”偏離,而在第2分割片202'及202產生之感應電場EB與在第1分割片201'及201產生之感應電場EA的偏離變大之情況。 As shown in FIG. 13, as the value of the window width ratio a / b deviates from “1”, the value of the electric field intensity ratio EB / EA of the induced electric field also deviates from “1”. This indicates that the window width ratio a / b deviates from "1", and the deviation of the induced electric field EB generated in the second divided pieces 202 'and 202 from the induced electric field EA generated in the first divided pieces 201' and 201 becomes larger. Happening.
實際進行處理時,感應電場EB與感應電場EA的差較小(較佳的是感應電場EB與感應電場EA的差小到幾乎沒有)係對均勻的處理較有效。但,實際上,感應電場EB與感應電場EA的差係可預估到某種程度上的容許誤差。若從實用之觀點來考慮,則容許誤差的一例約為±20 ~25%的範圍。例如,在使感應電場EB與感應電場EA的差抑制在約±20~25%以內,則將感應電場之電場強度比EB/EA抑制在約0.8以上1.2以下的範圍即可。為此,如圖13中的範圍M1所示,將窗寬度比a/b設定成0.8以上1.2以下的範圍,分割第1分割片201與第2分割片202即可。 In actual processing, the difference between the induced electric field EB and the induced electric field EA is small (preferably, the difference between the induced electric field EB and the induced electric field EA is small to almost no), which is more effective for uniform processing. However, in fact, the difference between the induced electric field EB and the induced electric field EA can be estimated to a certain degree of allowable error. From a practical point of view, an example of the allowable error is about ± 20 ~ 25% of range. For example, if the difference between the induced electric field EB and the induced electric field EA is suppressed to within about ± 20 to 25%, the electric field intensity ratio EB / EA of the induced electric field may be suppressed to a range of about 0.8 to 1.2. Therefore, as shown by a range M1 in FIG. 13, the window width ratio a / b may be set to a range of 0.8 to 1.2, and the first divided piece 201 and the second divided piece 202 may be divided.
又,將窗寬度比a/b設定在0.8以上1.2以下的範圍是指形成有第1線51與第1分割片201之長邊2a的角度θ亦從45°偏移。例如,如圖13所示,即使以將角度θ設為從45°偏差約±6°(約39°以上約51°以下的範圍)之範圍M2的方式來設定角度θ,亦能夠將感應電場E之電場強度比EB/EA抑制在約0.8以上1.2以下的範圍。 In addition, setting the window width ratio a / b to a range of 0.8 to 1.2 means that the angle θ where the first line 51 and the long side 2a of the first divided piece 201 are formed is also shifted from 45 °. For example, as shown in FIG. 13, even if the angle θ is set so that the angle θ is set to a range M2 with a deviation of about ± 6 ° from 45 ° (a range from about 39 ° to about 51 °), the induced electric field can be set The electric field intensity ratio EB / EA of E is suppressed in a range of about 0.8 to 1.2.
又,若以從45°偏差約±6°(約39°以上約51°以下的範圍)之範圍的方式來設定角度θ,亦能夠將窗寬度比a/b設定在0.8以上1.2以下的範圍。 In addition, if the angle θ is set so as to deviate from a range of 45 ° by about ± 6 ° (a range from about 39 ° to about 51 °), the window width ratio a / b can also be set to a range from 0.8 to 1.2. .
如此一來,能夠藉由將窗寬度比a/b設在0.8以上1.2以下之範圍及/或將形成有第1線51與第1分割片201之長邊2a之角度θ設在從45°偏差約±6°(約39°以上約51°以下的範圍)之範圍的方式,得到可將感應電場之電場強度比EB/EA抑制在約0.8以上1.2以下之範圍的感應耦合電漿處理裝置。 In this way, the window width ratio a / b can be set to a range from 0.8 to 1.2 and / or the angle θ of the long side 2a where the first line 51 and the first divided piece 201 are formed can be set from 45 ° An inductively coupled plasma processing apparatus capable of suppressing the electric field intensity ratio EB / EA of the induced electric field to a range of about 0.8 to 1.2 is provided with a deviation of about ± 6 ° (a range from about 39 ° to about 51 °). .
又,像這樣的窗寬度比a/b之設定,係亦適用於如圖14(A)~(C)所示,參閱圖7、圖8所說明的介電質窗2或如圖15(A)~(C)所示,參閱圖9所說明的介電質窗2'、如圖16(A)~(C)所示,參閱圖10所說明的介電質窗2'。 The setting of the window width ratio a / b like this is also applicable to the dielectric window 2 as shown in FIGS. 14 (A) to (C), or as shown in FIG. 7 or FIG. 15 ( As shown in A) to (C), referring to the dielectric window 2 'described with reference to FIG. 9, and as shown in FIGS. 16 (A) to (C), referring to the dielectric window 2' described with reference to FIG.
另外,本發明係不限定於上述實施形態,可進行各種變形。 The present invention is not limited to the embodiment described above, and various modifications are possible.
例如,在上述實施形態中,雖表示了將同心狀地設置環繞3圈之天線部的樣態作為高頻天線,但亦可為僅1圈的天線部,亦可為2圈的天線部,亦可為4圈以上。藉由設置2個以上的天線部,可調整各天線部之阻抗並獨立加以控制電流值,而控制作為感應耦合電漿全體的密度分布。又,作為構成高頻天線的天線部係以環狀之樣態為例進行了說明,但只要是在對應於介電質窗的面內沿著周方向環繞而設即可,亦可為螺旋狀等、其他形狀。例如,能夠以圖11所示之多重漩渦天線為例。在圖11的例子中,係將4條天線線131,132,133,134各錯開90°位置捲繞而形成全體為漩渦狀的多重(四重)天線,天線線之配置區域係大致呈框狀。 For example, in the above-mentioned embodiment, although the configuration in which the antenna portion is arranged concentrically to surround three turns is shown as a high-frequency antenna, the antenna portion may be only one turn, or the antenna portion may be two turns. It can also be 4 or more turns. By providing two or more antenna sections, the impedance of each antenna section can be adjusted and the current value can be controlled independently, thereby controlling the density distribution of the entire inductively coupled plasma. In addition, although the antenna portion constituting the high-frequency antenna has been described as an example of a loop shape, it may be provided in a circumferential direction in a plane corresponding to a dielectric window, and may be a spiral shape. Shape, etc., other shapes. For example, the multiple vortex antenna shown in FIG. 11 can be taken as an example. In the example of FIG. 11, four antenna wires 131, 132, 133, and 134 are wound at 90 ° positions to form a vortex-shaped multiple (quadruple) antenna. The arrangement area of the antenna wires is roughly framed. shape.
又,上述實施形態雖例示蝕刻裝置作為感應耦合電漿處理裝置的一例,但並不限於蝕刻裝置,亦可適用於CVD成膜等其他的電漿處理裝置。 Moreover, although the said embodiment exemplifies an etching apparatus as an example of an inductively-coupled plasma processing apparatus, it is not limited to an etching apparatus, and can also be applied to other plasma processing apparatuses, such as CVD film-forming.
又,雖表示使用FPD用基板作為被處理基板之例,但只要是矩形基板亦可適用於對太陽電池面板用基板等其他基板之電漿處理。 In addition, although an example in which a substrate for FPD is used as a substrate to be processed is shown, as long as it is a rectangular substrate, it can be applied to plasma processing of other substrates such as a substrate for a solar cell panel.
2‧‧‧介電質窗 2‧‧‧ Dielectric window
6‧‧‧金屬支撐樑 6‧‧‧ metal support beam
2a‧‧‧長邊 2a‧‧‧long side
2b‧‧‧短邊 2b‧‧‧short side
51‧‧‧第1線 51‧‧‧line 1
52‧‧‧第2線 52‧‧‧Line 2
201‧‧‧長邊側分割片 201‧‧‧ Long Side Side Split
202‧‧‧短邊側分割片 202‧‧‧Short side split
P‧‧‧交點 P‧‧‧ intersection
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