TWI611455B - Inductively coupled plasma processing device - Google Patents

Abstract

Provided is an inductively coupled plasma processing apparatus capable of performing uniform plasma processing on a large-sized substrate to be processed using a divided dielectric window.

An inductively coupled plasma processing device for inductively coupled plasma processing on a rectangular substrate, comprising: a processing chamber, a receiving substrate; and a high-frequency antenna for generating an inductively coupled plasma in an area where the substrate in the processing chamber is arranged. ; And the dielectric window, which is rectangular, is arranged between the plasma generating area where the inductively coupled plasma is generated and the high-frequency antenna, and is provided corresponding to the substrate, and the high-frequency antenna is provided in a manner corresponding to the dielectric. The dielectric window (2) is divided into a plurality of divided pieces by a metal supporting beam (6) to form a first divided piece including a long side (2a) ( 201) and the ratio a / of the second divided piece (202) including the short side (2b), and the radial width a of the second divided piece (202) to the radial width b of the first divided piece (201) b is divided into a range of 0.8 to 1.2.

Description

Inductively coupled plasma processing device

The present invention relates to an inductively coupled plasma processing apparatus for applying plasma processing to a substrate to be processed, such as a glass substrate for manufacturing a flat panel display (FPD).

In the process of manufacturing a flat panel display (FPD) such as a liquid crystal display device (LCD), there is a process of performing plasma processing such as plasma etching or film forming processing on a glass substrate. To perform the plasma processing, plasma etching is used. Equipment or various plasma processing equipment such as plasma CVD equipment. Although conventionally, a capacitively coupled plasma processing apparatus has been used as a plasma processing apparatus, an inductively coupled plasma (ICP) processing apparatus having the advantage of being able to obtain a high-density plasma with a high degree of vacuum has recently attracted attention.

An inductively coupled plasma processing device is configured by placing a high-frequency antenna on the upper side of a dielectric window constituting a top wall of a processing chamber that houses a substrate to be processed. By supplying a processing gas into the processing chamber and supplying high-frequency power to the high-frequency antenna, An inductive coupling plasma is generated in a processing chamber, and a predetermined plasma treatment is applied to a substrate to be processed by the inductive coupling plasma. Mostly flat A planar antenna with a predetermined pattern is used as a high-frequency antenna of the inductively coupled plasma processing device. As such an inductively coupled plasma processing apparatus, for example, a technique disclosed in Patent Document 1 is known.

Recently, the size of a substrate to be processed has increased. For a rectangular glass substrate for LCD, for example, a short side × long side has a length of about 1500 mm × 1800 mm to a size of about 2200 mm × 2400 mm, and a size of about 2800 mm × 3000 mm. Significantly larger.

Along with the increase in the size of such a substrate to be processed, the rectangular dielectric window constituting the ceiling wall of the inductively coupled plasma processing apparatus is also increased in size. Dielectric materials such as quartz and ceramic constituting the dielectric window are relatively brittle, and therefore are not suitable for large-scale. Therefore, for example, as described in Patent Document 2, a dielectric support beam (metal support beam) is used to divide the dielectric window into four or the like to cope with an increase in the size of the dielectric window.

However, the size of the substrate to be processed has progressed more significantly. Therefore, it is estimated that the number of divisions of the dielectric window portion is further increased. If the linear division method described in Patent Document 2 is used, the dielectric window is divided into each side. For example, if three high-frequency antennas are formed into a loop or vortex evenly when divided into three parts, the metal support beam separating the central division window will form a closed circuit parallel to the high-frequency antenna and generate a reaction in the metal support beam. The electromotive force causes the plasma under the metal support beam to weaken.

Therefore, Patent Document 3 discloses that a metal support beam does not form a closed circuit parallel to a high-frequency antenna, but instead supports a radial metal structure intersecting the high-frequency antenna at the central portion of the dielectric window. Beam to divide dielectric window technology.

For example, as shown in FIG. 17, when the three loop antennas 413 a, 413 b, and 413 c of the high-frequency antenna 413 are formed concentrically, the metal support beam 406 is provided from the center of the dielectric window 402. The radially extending portion is formed into 8 divisions so that the metal supporting beam 406 does not constitute a closed circuit parallel to the high-frequency antenna.

[Prior technical literature]

[Patent Literature]

[Patent Document 1] Japanese Patent No. 3077009

[Patent Document 2] Japanese Patent No. 3609985

[Patent Document 3] Japanese Patent Laid-Open No. 2012-227428

However, as shown in FIG. 17, when the metal supporting beam 406 is formed so as to extend radially from the center of the dielectric window 402, the rectangular-shaped dielectric window 402 includes long sides because it corresponds to a rectangular substrate. The long-side central segment 402a and the short-side central segment 402b including short sides have different radial widths, and the number of turns of the antenna line of the high-frequency antenna 413 is the same. The electric field strength of the induced electric field of the sheet 402b is different, and it is difficult to perform plasma treatment with high uniformity.

Problems like this do not create the problem of forming a closed circuit parallel to the high-frequency antenna on the metal support beam, even in the diagonal 4 This is also the case when a rectangular dielectric window 402 is divided, for example.

On the other hand, Patent Document 3 discloses a feature of supplying a processing gas using a metal support beam as a shower head frame. However, in the divided state shown in FIG. 17, the gas supply from the metal support beam may be insufficient. In this case, it is necessary to separately provide a ceramic shower member arranged in the center portion of the dielectric window 402 with a gas discharge hole in the shape of a Union Jack. In this case, since a ceramic shower member is expensive, the cost increases. In addition, since unevenness is formed in the processing chamber, by-products are liable to adhere and particles due to peeling are easily generated.

Therefore, as shown in FIG. 18, although it is considered that the metal support beam 406 itself is formed in the shape of a British flag and used as a shower head frame, the metal support beam 406 is concentrated in the center of the dielectric window 402. There is a concern that the plasma density decreases in the center of the processing chamber.

The present invention has been made by a developer in view of the above-mentioned circumstances, and it is an object of the present invention to provide an inductively-coupled plasma processing apparatus capable of performing uniform plasma processing on a large-sized substrate to be processed using a divided dielectric window.

In addition, when a divided type dielectric window is used for a large substrate to be processed, even if the metal supporting beam of the divided dielectric window is used as a shower head frame, the plasma density in the central portion does not decrease. The subject of inductively coupled plasma processing equipment.

In order to solve the above-mentioned problems, a first aspect of the present invention is to provide an inductively coupled plasma processing apparatus for inducing a rectangular substrate. The inductively-coupled plasma processing device for coupled plasma processing is characterized by comprising: a processing chamber, a receiving substrate; a high-frequency antenna for generating an inductively-coupled plasma in an area where the substrate in the processing chamber is arranged; and a dielectric window. Is rectangular and is arranged between the plasma generating area where the inductive coupling plasma is generated and the high-frequency antenna, and is provided corresponding to the substrate. The high-frequency antenna is provided in a position corresponding to the dielectric window. The dielectric window is divided into a plurality of divided pieces by a metal supporting beam, so that a first divided piece including a long side and a second divided piece including a short side are formed. The ratio a / b of the width a in the radial direction of the second divided piece to the width b in the radial direction of the first divided piece is divided into a range of 0.8 or more and 1.2 or less.

In the inductively-coupled plasma processing apparatus according to the first aspect, the dielectric window is a line extending from the four corners in a direction of 45 ° ± 6 °, and the first line is connected to the first line. When a line parallel to the long side is interposed between the two intersections intersected by the two short sides, the second line may be formed by following the first line and the second line. The metal support beam is configured to be divided into the first divided piece and the second divided piece.

In addition, the dielectric window is formed by dividing the long side and the short side by three or more, and the metal support beam may be formed without a closed-loop circuit generated along the high-frequency antenna. Composition.

In this case, a line extending from the four corners of the dielectric window in the direction of 45 ° ± 6 ° is set as the first line, and the two lines connecting the first line with the short sides are sandwiched therebetween. The 2 first intersections of the rendezvous are the same as above A line parallel to each other is set as a second line, a pair of lines separated by three long sides is set as a third line, a pair of lines separated by three short sides is set to a fourth line, and the first line and the first line are divided. When the intersection of the 3rd line and the 4th line is the second intersection, the dielectric window system includes: the 2nd first divided piece, the 2nd line extending from the long side of the first line by the second line; Line 3, the part between the first intersection point and the second intersection point of the first line is separated from each other, and includes the long side and is formed at the central part of the long side; It is divided from the part between the two aforementioned fourth lines extending from one of the aforementioned short sides, the aforementioned first intersection point of the aforementioned first line, and the aforementioned second intersection point, and includes the aforementioned short side and is formed on the aforementioned short side. A central portion; and four third divided pieces, which are separated by the third line and the fourth line, and are formed at corners of the dielectric window, and these divided pieces may be formed by the metal The support beam is divided.

According to a second aspect of the present invention, an inductively coupled plasma processing apparatus is provided. The inductively coupled plasma processing apparatus applies an inductively coupled plasma processing to a rectangular substrate, and is characterized by including a processing chamber and a substrate. ; A high-frequency antenna for generating an inductive coupling plasma in an area where the substrate in the processing chamber is arranged; a dielectric window, which is rectangular in shape, is arranged in the plasma generating area where the inductive coupling plasma is generated and the high And a gas supply unit that supplies a processing gas for forming a plasma to the processing chamber, and the high-frequency antenna surrounds a surface corresponding to the dielectric window. The dielectric window is first divided into a plurality of divided pieces by a first supporting beam made of metal, so that a first divided piece containing a long side and a second divided piece including a short side are formed. Minute Cut, and the ratio a / b of the radial width a of the second divided piece to the radial width b of the first divided piece is divided into a range of 0.8 or more and 1.2 or less. At least a part of the second support beam is made by a second support beam made of metal passing through the center of the dielectric window. The first support beam and the second support beam have a gas flow path through which a process gas flows. A plurality of gas discharge holes and a plurality of gas discharge holes for discharging the processing gas have the function of the gas supply unit.

In the inductively coupled plasma processing apparatus according to the second aspect, the second support beam system can be provided in a cross shape so as to pass through the center of the dielectric window.

The dielectric window is a line extending from the four corners in a direction of 45 ° ± 6 °, and the first line is intersected by two lines connecting the first line with the short sides interposed therebetween. When a line parallel to the two long intersections is set as the second line, the first support beam system may be formed along the first line and the second line, and the first support beam may be formed by the first support beam. Is divided into a structure of the first divided piece and the second divided piece.

In addition, the dielectric window may be formed by dividing the long side and the short side by three or more by the first supporting beam, and the first supporting beam and the second supporting beam may be formed so as not to exist. It has a configuration of a closed-loop circuit generated along the high-frequency antenna.

In this case, a line extending from the four corners of the dielectric window in the direction of 45 ° ± 6 ° is set as the first line, and the two lines connecting the first line with the short sides are sandwiched therebetween. A line that intersects the two first intersections and is parallel to the long side is referred to as a second line, and a pair of lines with three long sides respectively divided as the first line 3 lines, and a pair of 3 lines divided by a short side is set as a 4th line, and when the intersection of the 1st line, the 3rd line, and the 4th line is a 2nd intersection, the dielectric window system has : The two aforementioned first divisions are based on the aforementioned second line, two aforementioned third lines extending from one of the aforementioned long sides, and a portion between the aforementioned first intersection point and the aforementioned second intersection point of the aforementioned first line Is divided, and includes the long side and is formed at the center of the long side; the two second division pieces are formed by two of the fourth line and the first line of the first line extending from one of the short sides The part between the intersection point and the second intersection point is distinguished, and the short side is formed at the center of the short side including the short side; and 4 third divisions are divided by the 3rd line and the 4th line The partitions are formed at the corners of the dielectric window, and the divisions may be formed by the division by the first support beam.

In the inductively-coupled plasma processing apparatus according to the first and second aspects, the high-frequency antenna may be configured to surround a dielectric window in a plane corresponding to a circumferential direction of the dielectric window. The plurality of antenna portions are arranged concentrically. It is preferable that a high frequency of 1 MHz to 27 MHz is applied to the high frequency antenna.

According to the first aspect of the present invention, the rectangular dielectric window is divided into a plurality of divided pieces by a metal supporting beam, so that a first divided piece including a long side and a second divided portion including a short side are formed. And the ratio a / b of the width a in the radial direction of the second divided piece to the width b in the radial direction of the first divided piece is divided into a range of 0.8 or more and 1.2 or less. Therefore, it is possible to process large The substrate is uniformly plasma-treated using a divided dielectric window.

According to a second aspect of the present invention, the dielectric window having a rectangular shape is divided into a plurality of divided pieces by a first supporting beam made of metal, and a first divided piece including a long side and a first divided piece are formed. The second divided piece including the short side, and the ratio a / b of the radial width a of the second divided piece to the radial width b of the first divided piece is divided into a range of 0.8 or more and 1.2 or less. At least a part of each of the divided pieces is secondly divided by a second supporting beam made of metal provided through the center of the dielectric window, and the first supporting beam and the second supporting beam are configured to have a process gas flow. The flow path and a plurality of gas discharge holes through which the processing gas is discharged have the function of a gas supply unit. In this way, when a divided dielectric window is used, the first support beam does not cross the center of the dielectric window. Therefore, even if a sufficient processing gas is supplied from the support beam, the pass dielectric is provided. The second support beam in the center of the mass window can also prevent the plasma density from decreasing in the center.

1‧‧‧Body Container

2‧‧‧ Dielectric window

3‧‧‧ Antenna Room

4‧‧‧ treatment room

5‧‧‧ metal support scaffold

6, 6a, 6b ‧‧‧ metal support beam

13‧‧‧HF Antenna

13a‧‧‧outer antenna section

13b‧‧‧Intermediate antenna section

13c‧‧‧Inner antenna section

51‧‧‧line 1

52‧‧‧Line 2

53‧‧‧3rd line

54‧‧‧line 4

201‧‧‧ Long Side Side Split

202‧‧‧Short side split

203‧‧‧Long Side Central Segment

204‧‧‧ Short Side Central Segment

205‧‧‧corner split

G‧‧‧ substrate (rectangular substrate)

[FIG. 1] A cross-sectional view schematically showing an inductively coupled plasma processing apparatus according to a first embodiment of the present invention.

[Fig. 2] A plan view showing a dielectric window used in the inductively coupled plasma processing apparatus of Fig. 1. [Fig.

[Fig. 3] A plan view showing a dielectric window and a high-frequency antenna used in the inductively coupled plasma processing apparatus of Fig. 1. [Fig.

Fig. 4 is a schematic diagram showing a dielectric window divided into radial shapes.

[Fig. 5] Fig. 5 is a diagram showing an etching distribution when an eight-division dielectric window and a surrounding high-frequency antenna are formed by providing a metal support beam with a portion extending radially from the center.

[Fig. 6] A schematic diagram for explaining a division state of a dielectric window used in the inductively coupled plasma processing apparatus according to the first embodiment of the present invention.

[Fig. 7] A plan view showing another example of a dielectric window used in the inductively coupled plasma processing apparatus of Fig. 1. [Fig.

[Fig. 8] A plan view showing the dielectric window and the high-frequency antenna of Fig. 7. [Fig.

[Fig. 9] A plan view showing a dielectric window used in an inductively coupled plasma processing apparatus according to a second embodiment of the present invention.

10 is a plan view showing another example of a dielectric window used in an inductively coupled plasma processing apparatus according to a second embodiment of the present invention.

11 is a plan view showing another example of a high-frequency antenna.

[Fig. 12] (A) is a plan view showing a metal window of a reference example, and (B) to (D) are plan views showing an example of a dielectric window used in the embodiment of the present invention.

FIG. 13 is a graph showing dependency of an electric field intensity ratio and an angle window width ratio.

[Fig. 14] Figs. (A) to (C) are plan views showing still other examples of dielectric windows used in the inductively coupled plasma processing apparatus of Fig. 1. [Fig.

[Fig. 15] (A) to (C) are plan views showing other examples of the dielectric window used in the inductively coupled plasma processing apparatus of the second embodiment of the present invention.

[Fig. 16] (A) to (C) are planes showing other examples of the dielectric window used in the inductively coupled plasma processing apparatus of the second embodiment of the present invention. Illustration.

17 is a view showing a conventional dielectric window.

18 is a view showing an example of adding a metal support beam having a shower function to a conventional dielectric window.

Hereinafter, embodiments of the present invention will be described with reference to the attached drawings.

<First Embodiment>

Fig. 1 is a sectional view schematically showing an inductively coupled plasma processing apparatus according to a first embodiment of the present invention. The inductively coupled plasma processing apparatus shown in FIG. 1 can be used, for example, to etch a metal film, an ITO film, an oxide film, or the like when forming a thin-film transistor on a rectangular substrate such as a glass substrate for FPD, or the gray of a photoresist film Plasma treatment. Here, the FPD includes, for example, a liquid crystal display (LCD), an electroluminescence (EL) display, and a plasma display panel (PDP). In addition, the glass substrate for FPD is not limited, and the same plasma treatment may be applied to the glass substrate for solar cell panels.

This plasma processing apparatus is an airtight body container 1 having a rectangular tube shape made of a conductive material such as aluminum whose inner wall surface is anodized. The main body container 1 is assembled to be disassembled, and is electrically grounded through a ground wire 1a. The main body container 1 is a rectangular dielectric window 2 formed by being insulated from the main body container 1, and is partitioned into an antenna chamber 3 and a processing chamber 4. Dielectric The quality window 2 constitutes the top wall of the processing chamber 4.

Between the side wall 3a of the antenna chamber 3 and the side wall 4a of the processing chamber 4, a metal support scaffold (metal support scaffold) 5 and a metal support beam (metal support beam) protruding to the inside of the main body container 1 are provided. 6. The metal support scaffold 5 and the metal support beam 6 are made of, for example, aluminum. The dielectric window 2 is divided into dielectric windows formed by a dielectric such as ceramics such as alumina or a dielectric such as quartz, as described later, and in a divided state, it is supported by a metal frame 5 and a metal support beam 6 Supported by. The metal supporting beam 6 is suspended from the ceiling of the main body container 1 by a plurality of hangers (not shown). The metal supporting scaffold 5 and the metal supporting beam 6 may also be covered with a dielectric member.

The metal support beam 6 may also serve as a shower head frame for processing gas supply. When the metal support beam 6 also serves as the shower head frame, as shown in the figure, a gas flow path 8 is formed inside the metal support beam 6 and extends parallel to the processing surface of the substrate to be processed. A plurality of gas discharge holes 8 a are formed in the gas flow path 8 to discharge the processing gas into the processing chamber 4. The gas flow path 8 supplies a processing gas from the processing gas supply system 20 through a gas supply pipe 20a, and discharges the processing gas into the processing chamber 4 from the gas discharge hole 8a. In addition, the processing gas system can be replaced by a supply from the support beam 6 or a ceramic shower member provided separately from the dielectric window 2 at the same time to discharge the processing gas.

In the antenna chamber 3 on the dielectric window 2, a high-frequency antenna 13 facing the dielectric window 2 is arranged. The high-frequency antenna 13 is separated from the dielectric window 2 by a partition 14 made of an insulating member.

The high-frequency antenna 13 is connected via a power supply member 15, a power supply line 16, The matching device 17 is connected to a first high-frequency power supply 18. During the plasma processing, high-frequency power, such as 13.56 MHz, is supplied from the first high-frequency power source 18 to the high-frequency antenna 13 through the matcher 17, the power supply line 16, and the power supply member 15. An induced electric field is formed in the plasma generating region of the electrode, and the processing gas supplied from the plurality of gas discharge holes 8 a by the induced electric field is plasmatized in the plasma generating region in the processing chamber 4.

A rectangular glass substrate for FPD (hereinafter referred to as a substrate) G is disposed below the processing chamber 4 so as to face the high-frequency antenna 13 with the dielectric window 2 interposed therebetween. Mounting table 23. The mounting table 23 is made of a conductive material such as aluminum whose surface is anodized. The substrate G placed on the mounting table 23 is sucked and held by an electrostatic chuck (not shown).

The mounting table 23 is housed in the insulator frame 24 and is supported by a hollow pillar 25. The pillar 25 penetrates the bottom of the main body container 1 while maintaining an air-tight state, and is supported by a lifting mechanism (not shown) arranged outside the main body container 1. The mounting table 23 is driven in the vertical direction. In addition, a corrugated tube 26 is provided between the insulator frame 24 accommodating the mounting table 23 and the bottom of the main body container 1 so as to air-tightly surround the support post 25, so that the processing container can be secured even if the mounting table 23 is moved up and down. Air tightness within 4 Further, a side wall 4a of the processing chamber 4 is provided with a loading / unloading port 27a for loading and unloading the substrate G and a gate valve 27 for opening and closing.

The mounting table 23 is connected to a second high-frequency power source 29 via a power supply line 25 a provided in the hollow pillar 25 via a matching device 28. The second high-frequency power The source 29 is configured to apply high-frequency power for bias voltage, for example, high-frequency power having a frequency of 3.2 MHz, to the mounting table 23 during the plasma processing. By the self-supplied bias generated by the high-frequency power for the bias, ions in the plasma generated in the processing chamber 4 are efficiently introduced into the substrate G.

In addition, in the mounting table 23, in order to control the temperature of the substrate G, a temperature control mechanism including a heating means such as a ceramic heater, a refrigerant flow path, and the like, and a temperature sensor (both not shown) are provided. The piping or wiring of these mechanisms or components is led out of the main body container 1 through the hollow pillar 25.

An exhaust device 30 including a vacuum pump and the like is connected to the bottom of the processing chamber 4 via an exhaust pipe 31. The exhaust chamber 30 is used to exhaust the processing chamber 4. During the plasma processing, the inside of the processing chamber 4 is set to be maintained at a predetermined vacuum environment (for example, 1.33 Pa).

A cooling space (not shown) is formed on the back side of the substrate G placed on the mounting table 23, and a He gas flow path 41 for supplying He gas (a heat transfer gas as a constant pressure) is provided. By supplying the heat-transmitting gas to the back surface of the substrate G in this manner, it is possible to avoid a temperature rise or temperature change of the substrate G under vacuum.

Each component of the plasma processing apparatus is configured to be controlled by being connected to a control unit 100 including a microprocessor (computer). In addition, a user interface 101 including a keyboard or a display is connected to the control unit 100. The keyboard is used by an operator to perform input operations such as inputting instructions for managing a plasma processing apparatus. Visual display of operating conditions. The control unit 100 is connected to The memory unit 102 stores a control program for realizing various processes executed by the plasma processing apparatus under the control of the control unit 100, or is used to execute the process in the plasma process in accordance with the processing conditions. The program of each component of the device is the processing program. The processing program is a storage medium stored in the storage unit 102. The storage medium can also be a hard disk or semiconductor memory built into the computer, or it can be a portable device such as CDROM, DVD, flash memory, etc. The processing program may be appropriately transmitted from another device, for example, via a dedicated line. In addition, according to requirements, an instruction from the user interface 101 is used to call an arbitrary processing program from the memory unit 102, and the program is executed by the control unit 100, and is executed in the plasma processing apparatus under the control of the control unit 100. Expected processing.

Next, the dielectric window 2 and the high-frequency antenna 13 will be described with reference to FIGS. 2 and 3.

FIG. 2 shows a dielectric window, and FIG. 3 shows a plan view of the dielectric window and a high-frequency antenna.

As shown in FIG. 2, the rectangular dielectric window 2 has a long side 2 a and a short side 2 b. The dielectric window 2 is divided by the metal supporting beam 6 into two long-side-side divided pieces 201 including the long side 2a and two short-side-side divided pieces 202 including the short side 2b, and the long-side side divided pieces 201 and The short-side divided piece 202 is divided so that the widths in the radial direction are equal.

Specifically, the dielectric window 2 is a first line 51 with four lines extending in a direction of 45 ° from its four corners, and two short lines 2b are connected to the first line 51 respectively. When the two intersection points P intersected by the line and the line parallel to the long side are set as the second line 52, the first line 51 and the second line 52 are divided into two. The long-side divided piece 201 and the two short-side divided pieces 202. A metal support beam 6 exists at a predetermined width including the first line 51 and the second line 52, and the long-side divided piece 201 and the short-side divided piece 202 are supported by the metal supporting beam 6.

The high-frequency antenna 13 is provided so as to surround the dielectric window 2 in a circumferential direction. In this example, the outer antenna portion 13a and the intermediate antenna are arranged concentrically at three intervals in the radial direction. Each of the antenna portions of the portion 13 b and the inner antenna portion 13 c is formed in the same rectangular shape as the dielectric window 2. In this example, the antenna portions are formed in a loop shape.

Although plasma is generated in the space immediately below the antenna line of the high-frequency antenna 13 in the processing chamber 4, at this time, due to the electric field intensity in each position directly below the antenna line of the high-frequency antenna 13, it has a high level. The distribution of the plasma density area and the low plasma density area. Therefore, the high-frequency antenna 13 is formed as an antenna portion having an outer antenna portion 13a, a middle antenna portion 13b, and an inner antenna portion 13c that surrounds three turns in a radial interval. Alternatively, these impedances can be adjusted and the current value can be controlled independently, and the density distribution of the entire inductively coupled plasma can be controlled.

In addition, the divided form of the dielectric window 2 or the shape of the high-frequency antenna 13 is merely an example, and various forms may be used as described later.

Next, a description will be given of a processing operation when the substrate G is subjected to a plasma treatment, such as a plasma etching treatment, using the inductively-coupled plasma treatment apparatus configured as described above.

First, in a state where the gate valve 27 is opened, the substrate G is transferred into the processing chamber 4 from the loading / unloading port 27a by a transfer mechanism (not shown), and placed on the mounting surface of the mounting table 23, and then electrostatically charged. The chuck (not shown) will The substrate G is fixed on the mounting table 23. Next, the processing gas supplied into the processing chamber 4 from the processing gas supply system 20 is discharged into the processing chamber 4 from the gas discharge hole 8a of the metal supporting beam 6 which also serves as the shower head frame, and passes through the exhaust device. 30 evacuates the inside of the processing chamber 4 through the exhaust pipe 31, and maintains the processing chamber at a pressure environment of, for example, about 0.66 to 26.6 Pa.

At this time, in a cooling space on the rear surface side of the substrate G, in order to avoid temperature rise or temperature change of the substrate G, He gas as a heat transfer gas is supplied through the He gas flow path 41.

Next, a high frequency, such as 1 MHz to 27 MHz, is applied from the high frequency power source 18 to the high frequency antenna 13, thereby generating a uniform induced electric field in the processing chamber 4 through the dielectric window 2. In this way, with the generated induced electric field, the processing gas in the processing chamber 4 is plasmatized, and a high-density inductively coupled plasma is generated. With this plasma, the substrate G is subjected to a plasma treatment such as a plasma etching process.

In this case, it was found that, as the dielectric window 2 becomes larger, it is divided into a plurality of dielectric windows. However, at this time, if the dielectric window 2 is divided into radial shapes, the electric field is induced. The electric field intensity distribution becomes uneven and the uniformity of the plasma treatment becomes worse.

This point will be described with reference to the schematic diagram of FIG. 4. FIG. 4 is a schematic diagram showing a dielectric window divided into radial shapes. In FIG. 4, for convenience, the high-frequency antenna 13 is depicted as a two-loop loop antenna, and the metal support beam 6 is omitted. As shown in FIG. 4, in a case where the rectangular dielectric window 2 is subjected to a typical radial division, that is, a diagonal division, the radial width of the long-side-side divided piece 201 ′ including the long side 2 a ( I.e. from the center of dielectric window 2 The distance from the long side 2a) is B / 2 when the length of the short side 2b is set to B. On the other hand, the radial width of the short-side-side divided piece region 202 'including the short side 2b (that is, the distance from the center of the dielectric window 2 to the short side 2b) is the length of the long side 2a. When it is A, it becomes A / 2. Therefore, the width in the radial direction of the short-side-side divided piece 202 'is formed to be larger than the width in the radial direction of the long-side-side divided piece 201'. Here, since the number of turns of the high-frequency antenna 13 is the same in the long-side divided piece 201 ′ and the short-side divided piece 202 ′, the smaller the radial width, the more the corresponding length of the long-side divided piece will result. The electric field intensity of the 201 'part of the induced electric field becomes large. Therefore, the current density of the portion corresponding to the long-side-side divided piece 201 'becomes larger and the plasma becomes stronger, and the uniformity of the plasma decreases.

As described above, such a problem occurs as shown in FIG. 17 when the technology described in Patent Document 3 is formed. This Patent Document 3 is formed by providing a metal support beam with a portion extending radially from the center. The 8-dimension dielectric window does not constitute a closed circuit parallel to the high-frequency antenna.

Actually, when an etching process is performed in a plasma processing apparatus using the dielectric window and the high-frequency antenna shown in FIG. 17, the etching distribution of the substrate is formed as shown in FIG. 5. FIG. 5 shows a state in which the etching rate of the short side central portion of the inner side and the outer side of the substrate G is set to 1.00, and the short side central portion is lower than the long side central portion.

Here, in this embodiment, the rectangular dielectric window 2 is divided into a long-side divided piece 201 including a long side 2a and a short-side divided piece 202 including a short side 2b, and the long-side divided piece 201 and short side split 202 is divided in such a way that the radial width is equal. Specifically, as shown in FIG. 2, the dielectric window 2 has four first lines 51 extending from four corners in a direction of 45 °, and a second line 52 connecting the first line 51 respectively. The two intersection points P intersected by the two lines of the short side 2b are parallel to the long side 2a, and the first line 51 and the second line 52 are divided into the long-side split piece 201 and the short-side split piece. 202. Therefore, as shown in FIG. 6 which is schematically shown in FIG. 4, the width in the radial direction of the long-side divided piece 201 and the width in the radial direction of the short-side divided piece 202 are both formed as B / 2. Therefore, since the long-side divided piece 201 and the short-side divided piece 202 have the same number of turns of the high-frequency antenna 13 and the same width in the radial direction, the electric field strengths of the induced electric fields corresponding to those portions will be the same. Can form a uniform plasma.

FIG. 7 and FIG. 8 show examples of applying the present embodiment to a dielectric window that does not constitute a split circuit having a closed circuit parallel to a high-frequency antenna. FIG. 7 is a plan view showing a dielectric window, and FIG. 8 is a plan view showing a dielectric window and a high-frequency antenna. In this example, the long side 2a and the short side 2b are respectively divided into three, and the dielectric window 2 is formed into an 8-divided type. The 8-divided type is divided into two by a metal supporting beam 6: The center edge segment 203 is formed at a portion corresponding to the center of the long side; the two short edge center segments 204 are formed at a portion corresponding to the center of the short side; and the four corner segment pieces 205 include the long side ends. And short side ends. Further, the long-side central divided piece 203 and the short-side central divided piece 204 are divided such that the radial width is equal. The number of divisions of the long side 2a and the short side 2b may be three or more.

Specifically, the lines extending from the four corners of the dielectric window 2 in the direction of 45 ° are referred to as first lines 51, and the first lines 51 are connected to each other. A line parallel to the long side and at the two intersection points P intersected by the two lines of the short side 2b is set as the second line 52, and a pair of three lines divided by the long side 2a is set as the third line 53, respectively. When the short side 2b is divided into three lines, the fourth line 54 is used. When the intersection point of the first line 51, the third line 53, and the fourth line 54 is the intersection Q, the dielectric window 2 is divided into : The two long-side central division pieces 203 are separated by the second line 52, the portion between the intersection point P and the intersection point Q of the two third lines 53, the first line 51 extending from one long side 2a; The two short-side central segmentation segments 204 are separated by the portion between the intersection point P and the intersection point Q of the two fourth lines 54 and the first line 51 extending from one short side 2b; and the four corner divisions The side 205 is separated by a third line 53 and a fourth line 54. In the portion between the intersection point P and the intersection point Q of the second line 52, the third line 53, the fourth line 54, and the first line 51, that is, the divided portion, a metal support beam 6 exists with a predetermined width. The divided pieces are supported by the metal support beam 6.

The high-frequency antenna 13 is the same as that of FIG. 3, and has three antenna parts that concentrically surround the outer antenna part 13a, the middle antenna part 13b, and the inner antenna part 13c. Any contour is formed into the same rectangle as the dielectric window 2. shape.

In this example, the length in the radial direction of the long-side central divided piece 203 and the length in the radial direction of the short-side central divided piece 204 are both formed to be 1/2 of the length of the short side 2b to make them equal. Therefore, since the long-side central divided piece 203 and the short-side central divided piece 204 have the same number of turns of the high-frequency antenna 13 and the same width in the radial direction, the electric field strengths of the induced electric fields corresponding to those portions will be the same. Can form a uniform plasma.

In this way, even if the long side 2a and the short side 2b of the dielectric window 2 are divided into three divided forms, the metal supporting beam 6 does not constitute There is a closed circuit parallel to the high-frequency antenna 13. Therefore, no back electromotive force is generated at the metal support beam 6 and the plasma immediately below the metal support beam 6 does not weaken.

<Second Embodiment>

Next, a second embodiment of the present invention will be described.

In the first embodiment, the metal support beam 6 of the dielectric window 2 does not necessarily need to have the function of a shower head frame that discharges a processing gas, and even if the metal support beam 6 has the function of a shower head frame, it is allowed. In the present embodiment, the additional ceramic shower member is configured by using the metal support beam of the first embodiment as a shower head frame, and in addition to the additional metal support beam, it is configured to supply the processing gas only from the metal support beam. Dielectric window.

In the first embodiment, a metal support beam 6 is used in order to form the dielectric window 2 in a divided state in consideration of the uniformity of the plasma. Therefore, even if the metal supporting beam 6 is used as the shower head frame, the supply of the processing gas may be insufficient in a portion corresponding to the center of the dielectric window 2 in particular. In such a case, conventionally, a shower member made of ceramics has been separately provided as a British flag-shaped gas discharge hole.

However, since the ceramic shower member is expensive, the cost increases. In addition, since unevenness is formed in the processing chamber, by-products tend to adhere, and particles due to peeling are easily generated.

Therefore, in this embodiment, as shown in FIG. 9, a metal supporting beam is used as the shower head frame, and sufficient processing gas can be supplied only from the metal supporting beam, except for the dielectric materials shown in FIGS. 2 and 3. Metal support for window 2 The supporting beam 6 also uses a dielectric window 2 'provided with a cross-shaped metal supporting beam 6a passing through the center.

In this case, the long-side-side divided piece 201 is further divided into the first divided piece 201a and the second divided piece 201b by the metal supporting beam 6a, and the short-side divided piece 202 is further divided into the first divided piece. 202a and the second segment 202b.

In addition, FIG. 10 shows the dielectric support 2 of the dielectric window 2 shown in FIGS. 7 and 8 as another example of the first embodiment, and a dielectric provided with a cross-shaped metal support beam 6a passing through the center is also used. Example of window 2 '. In the example of FIG. 10, a metal support beam 6 b is further provided which connects the corners of the dielectric window 2 ′ from the intersection Q along the first line 51.

In the example of FIG. 10, the long-side central divided piece 203 is further divided into a first divided piece 203a and a second divided piece 203b by a metal supporting beam 6a, and the short-side central divided piece 204 is further divided into first pieces. The first divided piece 204a and the second divided piece 204b are further divided into a first divided piece 205a and a second divided piece 205b by a metal support beam 6b.

The dielectric window 2 of the first embodiment is such that the radial widths of the long-side divided pieces and the short-side divided pieces are the same in the radial direction, and the central portion is parallel to the long side 2a along the division line. The second line 52 is provided with a metal support beam 6, and there is no intersection portion of the metal support beam 6 at the center. Therefore, even if the metal support beam 6 of the dielectric window 2 is added with a cross-shaped metal support beam 6 a at the center to form the dielectric window 2 ′, the center metal support as shown in FIG. 18 is not generated. The beam is concentrated and the plasma density is not The central portion of the processing chamber 4 descends. In the example of FIG. 10, since the metal supporting beam 6 a is provided to cross the high-frequency antenna 13, there is no closed-loop circuit generated along the high-frequency antenna 13.

In addition, by adding the metal supporting beams 6a and 6b, the number of divisions of the dielectric window can be further increased, and it is easier to cope with the enlargement of the dielectric window due to the larger size of the device.

<Induced electric field strength ratio>

Next, the electric field intensity ratio of the induced electric field between the second divided piece 202 including the short side 2b and the first divided piece 201 including the long side 2a will be described.

The electric field strength E of the induced electric field is as shown in the following formula (1), which is proportional to the amount of current I of the antenna and the number of windings n, and inversely proportional to the window width (radial width) d.

From the expression (1), it can be seen that the electric field strength of the induced electric field changes in accordance with the width of the window width d. When the window width d becomes wider in the radial direction, compared with the case where the window width d is narrower, plasma must be generated more widely. Therefore, the electric field strength of the induced electric field E will weaken, and the plasma will weaken. Conversely, if the window width d becomes narrower in the radial direction, the electric field strength of the induced electric field E will increase.

For example, as shown in FIG. 12 (A), when the first line 51 ′ is diagonal, the electric field intensity of the induced electric field E of the second divided piece 202 ′ including the short side 2 b is the weakest. In the example shown in FIG. 12 (A), if the window width ratio a / b of the window width dB (= a) of the second divided piece 202 'and the window width dA (= b) of the first divided piece 201' is Set it to 1.3.

Hereinafter, when the window width ratio a / b is shortened to 1.1 as shown in FIG. 12 (B), the window width dB (= a) of the second divided piece 202 becomes narrower, and the electric field strength of the second divided piece 202 becomes smaller. Enhanced. Moreover, as shown in FIG. 12 (C), when the window width ratio a / b becomes 1, the electric field strength of the second divided piece 202 will be further enhanced, and both of the second divided piece 202 and the first divided piece 201 The electric field strengths of the induced electric field E will be equal. As shown in FIG. 12 (D), when the window width ratio a / b is less than 1, for example, 0.9, the electric field intensity of the induced electric field E is reversed in the second divided piece 202 and the first divided piece 201.

The electric field strength EA of the first divided pieces 201 'and 201 including the long side 2a shown in Figs. 12 (A) to (D) is EA = I × n / dA ... (2)

In addition, the electric field intensity EB of the second segment 202 'and 202 including the short side 2b is EB = I × n / dB ... (3)

The ratio "EB / EA" of the electric field strength EB of the second divided pieces 202 'and 202 to the electric field strength EA of the first divided pieces 201' and 201 is EB / EA = (I × n / dB) / (I × n /dA)...(4)

In the first divided pieces 201 'and 201 and the second divided pieces 202' and 202, since the amount of current I of the antenna and the number of windings n are equal, EB / EA = (1 / dB) / (1 / dA) is formed. = dA / dB ... (5)

The window width dA is the radial window width b of the first divided pieces 201 'and 201. Similarly, the window width dB is the radial window width a of the second divided pieces 202' and 202, so that EB / EA = b is formed. /a...(6)

As shown in (6), the electric field strength ratio "EB / EA" of the induced electric field E is the window width a of the radial direction of the first divided pieces 201 'and 201 and the radial direction of the second divided pieces 202' and 202. The window width b of the window width b is inversely proportional to "a / b".

Table 1 is a table showing a window width a, a window width b, a window width ratio a / b, an electric field intensity ratio EB / EA, and an angle θ of the first line 51 'or 51 and the long side 2a.

13 is a graph showing the dependence of the electric field intensity ratio and the window width ratio of the angle.

As shown in FIG. 13, as the value of the window width ratio a / b deviates from “1”, the value of the electric field intensity ratio EB / EA of the induced electric field also deviates from “1”. This indicates that the window width ratio a / b deviates from "1", and the deviation of the induced electric field EB generated in the second divided pieces 202 'and 202 from the induced electric field EA generated in the first divided pieces 201' and 201 becomes larger. Happening.

In actual processing, the difference between the induced electric field EB and the induced electric field EA is small (preferably, the difference between the induced electric field EB and the induced electric field EA is small to almost no), which is more effective for uniform processing. However, in fact, the difference between the induced electric field EB and the induced electric field EA can be estimated to a certain degree of allowable error. From a practical point of view, an example of the allowable error is about ± 20 ~ 25% of range. For example, if the difference between the induced electric field EB and the induced electric field EA is suppressed to within about ± 20 to 25%, the electric field intensity ratio EB / EA of the induced electric field may be suppressed to a range of about 0.8 to 1.2. Therefore, as shown by a range M1 in FIG. 13, the window width ratio a / b may be set to a range of 0.8 to 1.2, and the first divided piece 201 and the second divided piece 202 may be divided.

In addition, setting the window width ratio a / b to a range of 0.8 to 1.2 means that the angle θ where the first line 51 and the long side 2a of the first divided piece 201 are formed is also shifted from 45 °. For example, as shown in FIG. 13, even if the angle θ is set so that the angle θ is set to a range M2 with a deviation of about ± 6 ° from 45 ° (a range from about 39 ° to about 51 °), the induced electric field can be set The electric field intensity ratio EB / EA of E is suppressed in a range of about 0.8 to 1.2.

In addition, if the angle θ is set so as to deviate from a range of 45 ° by about ± 6 ° (a range from about 39 ° to about 51 °), the window width ratio a / b can also be set to a range from 0.8 to 1.2. .

In this way, the window width ratio a / b can be set to a range from 0.8 to 1.2 and / or the angle θ of the long side 2a where the first line 51 and the first divided piece 201 are formed can be set from 45 ° An inductively coupled plasma processing apparatus capable of suppressing the electric field intensity ratio EB / EA of the induced electric field to a range of about 0.8 to 1.2 is provided with a deviation of about ± 6 ° (a range from about 39 ° to about 51 °). .

The setting of the window width ratio a / b like this is also applicable to the dielectric window 2 as shown in FIGS. 14 (A) to (C), or as shown in FIG. 7 or FIG. 15 ( As shown in A) to (C), referring to the dielectric window 2 'described with reference to FIG. 9, and as shown in FIGS. 16 (A) to (C), referring to the dielectric window 2' described with reference to FIG.

The present invention is not limited to the embodiment described above, and various modifications are possible.

For example, in the above-mentioned embodiment, although the configuration in which the antenna portion is arranged concentrically to surround three turns is shown as a high-frequency antenna, the antenna portion may be only one turn, or the antenna portion may be two turns. It can also be 4 or more turns. By providing two or more antenna sections, the impedance of each antenna section can be adjusted and the current value can be controlled independently, thereby controlling the density distribution of the entire inductively coupled plasma. In addition, although the antenna portion constituting the high-frequency antenna has been described as an example of a loop shape, it may be provided in a circumferential direction in a plane corresponding to a dielectric window, and may be a spiral shape. Shape, etc., other shapes. For example, the multiple vortex antenna shown in FIG. 11 can be taken as an example. In the example of FIG. 11, four antenna wires 131, 132, 133, and 134 are wound at 90 ° positions to form a vortex-shaped multiple (quadruple) antenna. The arrangement area of the antenna wires is roughly framed. shape.

Moreover, although the said embodiment exemplifies an etching apparatus as an example of an inductively-coupled plasma processing apparatus, it is not limited to an etching apparatus, and can also be applied to other plasma processing apparatuses, such as CVD film-forming.

In addition, although an example in which a substrate for FPD is used as a substrate to be processed is shown, as long as it is a rectangular substrate, it can be applied to plasma processing of other substrates such as a substrate for a solar cell panel.

2‧‧‧ Dielectric window

6‧‧‧ metal support beam

2a‧‧‧long side

2b‧‧‧short side

51‧‧‧line 1

52‧‧‧Line 2

201‧‧‧ Long Side Side Split

202‧‧‧Short side split

P‧‧‧ intersection

Claims (8)

An inductively coupled plasma processing device is an inductively coupled plasma processing device that applies an inductively coupled plasma treatment to a rectangular substrate. The inductively coupled plasma processing device includes a processing chamber, a receiving substrate, and a high-frequency antenna. An area of the substrate in the processing chamber generates an inductive coupling plasma; and a dielectric window, which is rectangular in shape, is arranged between the plasma generating area where the inductive coupling plasma is generated and the high-frequency antenna, and has long sides and On the short side, the high-frequency antenna is provided so as to surround the surface corresponding to the dielectric window. The dielectric window is divided into a plurality of divided pieces by a metal supporting beam, so that A ratio a / b of the first divided piece including the long side and the second divided piece including the short side, and the ratio a / b of the radial width a of the second divided piece to the radial width b of the first divided piece is divided into In the range of 0.8 to 1.2, the dielectric window is a first line extending from the four corners of the dielectric window at 45 ° ± 6 ° to the central portion of the dielectric window, and connects the first The two lines intersected by the two short sides When two lines intersecting and parallel to the long side are set as the second line, the first split piece and the first split piece are divided by the metal support beam provided along the first line and the second line. The second divided piece. Inductively coupled plasma processing device for rectangular substrate The inductively coupled plasma processing device for applying the inductively coupled plasma processing is characterized by comprising: a processing chamber, a receiving substrate; and a high-frequency antenna for generating an inductively coupled plasma in an area where the substrate in the processing chamber is disposed; The electric mass window is rectangular and is arranged between the plasma generating area where the inductive coupling plasma is generated and the high-frequency antenna, and has long sides and short sides. The high-frequency antenna is provided in a position corresponding to the medium. The dielectric window is designed to be surrounded in a plane. The dielectric window is divided into a plurality of divided pieces by a metal supporting beam, so that a first divided piece including a long side and a first divided piece including a short side are formed. 2 divided pieces, and the ratio a / b of the radial width a of the second divided piece to the radial width b of the first divided piece is divided into a range of 0.8 or more and 1.2 or less. The long side and the short side are each set to 3 or more. In the metal support beam, there is no closed-loop circuit generated along the high-frequency antenna. Corners at 45 ° ± 6 ° toward the dielectric The line extending from the central portion of the line is the first line, and the line parallel to the long side is connected to the two first intersections that are intersected by the two lines that sandwich the short side. Let a pair of 3 long lines separate 3 lines, a pair of 3 short lines separate 4 lines, and intersections of the first line with the third line and the fourth line When set to the second intersection, The dielectric window includes: the two first divided pieces, the second line, the two third lines extending from one of the long sides, the first intersection point of the first line, and the first line. The part between 2 intersections is separated from each other, and includes the long side and is formed at the center of the long side; the two second segmented pieces are formed by the two fourth lines, The part between the first intersection point and the second intersection point of the first line is separated from each other, and includes the short side and is formed in the central part of the short side; and 4 third divisions, using the third The lines are separated from the fourth line, and are formed at the corners of the dielectric window. The division pieces are divided by the metal support beam. An inductively coupled plasma processing device is an inductively coupled plasma processing device that applies an inductively coupled plasma treatment to a rectangular substrate. The inductively coupled plasma processing device includes a processing chamber, a receiving substrate, and a high-frequency antenna. The area of the substrate in the processing chamber generates an inductive coupling plasma; the dielectric window is rectangular and is arranged between the plasma generating area where the inductive coupling plasma is generated and the high-frequency antenna, and has long sides and short lengths. And a gas supply unit that supplies a processing gas for forming a plasma to the processing chamber, and the high-frequency antenna surrounds a surface corresponding to the dielectric window. The dielectric window is divided into a plurality of divided pieces by a first supporting beam made of metal, so that a first divided piece including a long side and a first divided piece including a short side are formed. Two divided pieces, and the ratio a / b of the radial width a of the second divided piece to the radial width b of the first divided piece is divided into a range of 0.8 or more and 1.2 or less, and the plurality of divided pieces At least a part of the second division is performed by a second metal support beam provided through the center of the dielectric window. The first support beam and the second support beam are provided with a processing gas. The flow path and the plurality of gas discharge holes for discharging the processing gas have the function of the gas supply part. The dielectric window is located at the center of the dielectric window from 45 ° to 6 ° from its four corners. The partially extended line is set as the first line, and when the line parallel to the long side is connected to the two lines intersecting the two intersections of the two lines that sandwich the short side, the second line The 1 support beam is provided along the first line and the second line. Is divided into the first divided slice and the second divided slice. For example, the inductively-coupled plasma processing device of claim 3, wherein the second support beam is arranged in a cross shape to pass through the center of the dielectric window. An inductively coupled plasma processing device is an inductively coupled plasma processing device which applies an inductively coupled plasma processing to a rectangular substrate. The system is provided with a processing chamber and a substrate; a high-frequency antenna for generating an inductive coupling plasma in an area where the substrate in the processing chamber is arranged; and a dielectric window having a rectangular shape and configured to generate the inductive coupling plasma. The plasma generating area and the high-frequency antenna have long sides and short sides; and a gas supply unit supplies the processing chamber with a processing gas for forming a plasma. The high-frequency antenna corresponds to the high-frequency antenna. The dielectric window is provided with an in-plane circumscribing method. The aforementioned dielectric window is divided into a plurality of divided pieces by a first supporting beam made of metal, so that a first portion including a long side is formed. The ratio a / b of the divided piece and the second divided piece including the short side, and the radial width a of the second divided piece to the radial width b of the first divided piece is divided into a range of 0.8 or more and 1.2 or less. Moreover, at least a part of the plurality of divided pieces is secondly divided by a second supporting beam made of metal provided through the center of the dielectric window, the first supporting beam and the second supporting beam. , Is a gas flow with a process gas circulation And a plurality of gas discharge holes for discharging the processing gas, and having the function of the gas supply part, the dielectric window is the long side and the short side are respectively set to 3 or more by the first support beam, The first supporting beam and the second In the support beam, there is no closed loop circuit generated along the high-frequency antenna, and a line extending from the four corners of the dielectric window to the central portion of the dielectric window at 45 ° ± 6 ° Let the line be the first line, and connect the line parallel to the long side by connecting the two first intersections intersected by the two lines of the short side in the first line, and the pair of long sides. When the three-divided line is the third line, the pair of short-side three-divided lines is the fourth line, and the intersection of the first line, the third line, and the fourth line is the second intersection The dielectric window includes: the two first division pieces, the second line, the two third lines extending from one of the long sides, and the first intersection of the first line and the first line. The part between the second intersections is separated from each other, and is formed at the center of the long side including the long side; the two second segmented pieces are formed by the two fourth lines extending from one of the short sides. The part between the first intersection point and the second intersection point of the first line is separated from each other, and the short side is formed at the central part of the short side, including the short side; and 4 The third divided pieces are separated by the third line and the fourth line, and are formed at the corners of the dielectric window. These divided pieces are divided by the first supporting beam. For example, the inductively-coupled plasma processing device according to claim 5 of the application, wherein the second support beam is arranged in a cross shape so as to pass through the center of the dielectric window. For example, the inductively-coupled plasma processing device according to any one of claims 1 to 6, wherein the high-frequency antenna is configured to run along the dielectric window in a plane corresponding to the dielectric window. A plurality of antenna portions arranged in a circumferential direction are arranged concentrically. For example, the inductively-coupled plasma processing device according to any one of claims 1 to 6, wherein a high frequency of 1 MHz to 27 MHz is applied to the high-frequency antenna.