TW201833193A - Method for producing polysilane compound, composition, cured product and substrate, and anionic polymerization selective accelerator - Google Patents

Method for producing polysilane compound, composition, cured product and substrate, and anionic polymerization selective accelerator Download PDF

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TW201833193A
TW201833193A TW106146242A TW106146242A TW201833193A TW 201833193 A TW201833193 A TW 201833193A TW 106146242 A TW106146242 A TW 106146242A TW 106146242 A TW106146242 A TW 106146242A TW 201833193 A TW201833193 A TW 201833193A
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polydecane
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lanthanum
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染谷和也
野田国宏
千坂博樹
塩田大
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日商東京應化工業股份有限公司
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Abstract

The present invention provides: a method for producing a polysilane compound which is capable of suppressing the generation of an outgas and the occurrence of microcracks in a film that contains the polysilane compound; and an anionic polymerization selective accelerator that is used in the production of the polysilane compound, and a composition, a cured product and a substrate, each of which contains the polysilane compound. A method for producing a polysilane compound, which comprises a process for causing a reaction of a halosilane compound in the presence of a nitroxy compound. An anionic polymerization selective accelerator which is used in the production of a polysilane compound, and which contains a nitroxy compound that comprises a structure represented by general formula (A). (In formula (A), each of Ra1, Ra2, Ra3 and Ra4 independently represents a hydrogen atom or an organic group; Ra1 and Ra2 may combine with each other to form a ring; and Ra3 and Ra4 may combine with each other to form a ring.)

Description

聚矽烷化合物、組合物、硬化物及基板之製造方法、以及陰離子聚合選擇促進劑Polydecane compound, composition, cured product and method for producing substrate, and anionic polymerization selection accelerator

本發明係關於一種聚矽烷化合物、組合物、硬化物及基板之製造方法、以及聚矽烷化合物之製造中之陰離子聚合選擇促進劑。The present invention relates to a polydecane compound, a composition, a cured product, a method for producing a substrate, and an anionic polymerization selection accelerator in the production of a polydecane compound.

聚矽烷化合物係於陶瓷前驅物、光電子材料(例如光阻劑、有機感光體等光電子照相材料、光波導等光傳輸材料、光記憶體等光記錄材料、電致發光元件用材料)、各種元件中之層間絕緣膜、如LED(Light Emitting Diode,發光二極體)元件或有機EL(Electroluminescence,電致發光)元件般之發光元件之密封材料、用於向半導體基板擴散雜質之塗佈膜、及半導體製程用之間隙填充材料等用途中使用。 作為此種聚矽烷化合物之製造方法,例如於專利文獻1中揭示有如下之聚矽烷之製造方法:於在鋰化合物及特定之金屬鹵化物之存在下使鹵矽烷化合物與金屬鎂進行反應而生成聚矽烷之反應系中,向作為反應後殘留之固體成分之活性金屬鎂中新添加上述原料(鋰化合物、金屬鹵化物、及鹵矽烷化合物)而進行反應,生成聚矽烷。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利第4559642號公報The polydecane compound is a ceramic precursor, an optoelectronic material (for example, a photoreceptor such as a photoresist or an organic photoreceptor, an optical transmission material such as an optical waveguide, an optical recording material such as an optical memory, or a material for an electroluminescence device), and various components. An interlayer insulating film, a sealing material of a light-emitting element such as an LED (Light Emitting Diode) element or an organic EL (Electroluminescence) element, a coating film for diffusing impurities to a semiconductor substrate, It is used in applications such as gap fillers for semiconductor processes. As a method for producing such a polydecane compound, for example, Patent Document 1 discloses a method for producing polydecane which is produced by reacting a halodecane compound with magnesium metal in the presence of a lithium compound and a specific metal halide. In the reaction system of polydecane, the raw materials (lithium compound, metal halide, and halodecane compound) are newly added to the active metal magnesium which is a solid component remaining after the reaction, and reacted to form polydecane. [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent No. 4559642

[發明所欲解決之問題] 若使用含有聚矽烷化合物之組合物形成膜,則有產生微裂及釋氣之情形。 鑒於上述先前技術之問題,本發明之目的在於提供一種可抑制包含聚矽烷化合物之膜中之釋氣產生及微裂產生的聚矽烷化合物之製造方法、包含該聚矽烷化合物之組合物、硬化物及基板、以及聚矽烷化合物之製造中之陰離子聚合選擇促進劑。 [解決問題之技術手段] 本發明者等人發現:於聚矽烷化合物之製造方法中,藉由於硝醯基化合物之存在下使鹵矽烷化合物進行反應,可抑制釋氣產生及微裂產生,從而完成了本發明。 本發明之第1態樣係一種聚矽烷化合物之製造方法,其包括: 於硝醯基化合物之存在下使鹵矽烷化合物進行反應。 本發明之第2態樣係藉由第1態樣之製造方法所獲得之聚矽烷化合物。 本發明之第3態樣係包含第2態樣之聚矽烷化合物之組合物。 本發明之第4態樣係第3態樣之組合物之硬化物。 本發明之第5態樣係具備第4態樣之硬化物之基板。 本發明之第6態樣係一種含有包含下述通式(A)所表示之結構之硝醯基化合物的聚矽烷化合物之製造中之陰離子聚合選擇促進劑。 [化1](式(A)中,Ra1 、Ra2 、Ra3 及Ra4 分別獨立地為氫原子或有機基。Ra1 與Ra2 可相互鍵結而形成環。又,Ra3 與Ra4 可相互鍵結而形成環)。 本發明之第7態樣係一種包含聚矽烷化合物之組合物之製造方法,且上述聚矽烷化合物係藉由第1態樣之方法所製造。 本發明之第8態樣係一種組合物之硬化物之製造方法,且上述組合物係藉由第7態樣之方法所製造。 本發明之第9態樣係一種具備硬化物之基板之製造方法,且上述硬化物係藉由第8態樣之方法所製造。 [發明之效果] 根據本發明,可提供一種可抑制包含聚矽烷化合物之膜中之釋氣產生及微裂產生的聚矽烷化合物之製造方法、包含該聚矽烷化合物之組合物、硬化物及基板、以及聚矽烷化合物之製造中之陰離子聚合選擇促進劑。[Problems to be Solved by the Invention] When a film is formed using a composition containing a polydecane compound, microcracking and outgassing may occur. In view of the above problems of the prior art, an object of the present invention is to provide a process for producing a polydecane compound capable of suppressing generation of gas generation and microcracking in a film containing a polydecane compound, a composition comprising the polydecane compound, and a cured product. And an anionic polymerization selection accelerator in the production of a substrate and a polydecane compound. [Means for Solving the Problems] The present inventors have found that in the method for producing a polydecane compound, by reacting a halodecane compound in the presence of a nitroxide-based compound, generation of outgas and microcracking can be suppressed, thereby The present invention has been completed. A first aspect of the invention is a process for producing a polydecane compound, which comprises: reacting a halodecane compound in the presence of a nitrate-based compound. The second aspect of the present invention is a polydecane compound obtained by the production method of the first aspect. The third aspect of the present invention is a composition comprising the second aspect of the polydecane compound. The fourth aspect of the present invention is a cured product of the composition of the third aspect. A fifth aspect of the present invention is a substrate comprising a cured material of a fourth aspect. The sixth aspect of the present invention is an anionic polymerization selection accelerator in the production of a polydecane compound containing a nitroxide compound having a structure represented by the following formula (A). [Chemical 1] (In the formula (A), R a1 , R a2 , R a3 and R a4 are each independently a hydrogen atom or an organic group. R a1 and R a2 may be bonded to each other to form a ring. Further, R a3 and R a4 may mutually Bonding to form a ring). The seventh aspect of the present invention is a method for producing a composition comprising a polydecane compound, and the polydecane compound is produced by the method of the first aspect. The eighth aspect of the invention is a method for producing a cured product of the composition, and the composition is produced by the method of the seventh aspect. According to a ninth aspect of the invention, there is provided a method of producing a substrate having a cured product, wherein the cured product is produced by the method of the eighth aspect. [Effects of the Invention] According to the present invention, a method for producing a polydecane compound capable of suppressing generation of gas generation and microcracking in a film containing a polydecane compound, a composition comprising the polydecane compound, a cured product, and a substrate can be provided. And an anionic polymerization selection accelerator in the manufacture of a polydecane compound.

以下對本發明之實施態樣詳細地進行說明,但本發明不受以下實施態樣之任何限定,可於本發明之目的之範圍內適當地加以變更而實施。 又,於本說明書中,「~」只要未特別說明,則表示以上至以下。 <聚矽烷化合物之製造方法> 第1態樣之聚矽烷化合物之製造方法包括:於硝醯基化合物之存在下使鹵矽烷化合物進行反應。 於聚矽烷化合物之製造中,通常可產生矽烷基自由基陽離子、及矽烷基自由基陰離子(Electronic Structure of Radical Anions and Cations of Polysilanes with Structural Defects Seki, Shu; Yoshida, Yoichi; Tagawa, Seiichi; Asai, Keisuke, Macromolecules, 1999, 32 (4), pp1080 - 1086)。 矽烷基自由基陰離子可藉由陰離子聚合而供於聚矽烷化合物之製造,另一方面,有空氣中之水(H2 O)或氧氣(O2 )選擇性地與矽烷基自由基陽離子進行反應而生成矽氧烷鍵(Si-O)、矽烷醇基(Si-OH)等副反應物之情形。本發明者等人發現:若使用含有包含此種矽氧烷鍵、矽烷醇基等副反應物之聚矽烷化合物之組合物而形成膜,則上述矽氧烷鍵、矽烷醇基等會導致微裂。 又,認為矽烷基自由基陽離子較矽烷基自由基陰離子容易發生芳基、烷基等取代基(尤其是芳基)之脫離,從而導致釋氣。 相對於此,推定於第1態樣之聚矽烷化合物之製造方法中,硝醯基化合物使矽烷基自由基陽離子進行電荷自旋而使矽烷基自由基陽離子減少,藉此可選擇性地促進矽烷基自由基陰離子之陰離子聚合。推定藉此可抑制導致微裂之矽氧烷鍵、矽烷醇基等副反應物之生成,又,亦可抑制釋氣之產生。 (硝醯基化合物) 作為上述硝醯基化合物,只要為能夠以氮氧自由基之形式穩定地存在之化合物,則無特別限定,較佳為包含下述通式(A)所表示之結構之化合物。 [化2](式(A)中,Ra1 、Ra2 、Ra3 及Ra4 分別獨立地為氫原子或有機基。Ra1 與Ra2 可相互鍵結而形成環。又,Ra3 與Ra4 可相互鍵結而形成環)。 於式(A)中,作為Ra1 ~Ra4 所表示之有機基,可列舉碳原子數1~10之有機基,Ra1 、Ra2 、Ra3 及Ra4 較佳為分別獨立地為烷基或經雜原子取代之烷基。作為烷基,較佳為甲基、乙基、正丙基及異丙基。作為雜原子之較佳例,可列舉鹵素原子、氧原子、硫原子、及氮原子等。 作為硝醯基化合物之較佳之具體例,例如較佳為二-第三丁基氮氧化物、二-1,1-二甲基丙基氮氧化物、二-1,2-二甲基丙基氮氧化物、二-2,2-二甲基丙基氮氧化物,及下述式(A1)、(A2)、或(A3)所表示之化合物,更佳為下述式(A1)、(A2)、或(A3)所表示之化合物。 [化3]式(A1)、(A2)、及(A3)中,Ra5 表示氫原子、碳原子數1~12之烷基、羥基、胺基、羧基、氰基、經雜原子取代之烷基,或經由醚鍵、酯鍵、醯胺鍵或者胺基甲酸酯鍵而鍵結之1價有機基。 Ra6 表示2價或3價有機基。 n1及n2為滿足1≦n1+n2≦2之整數。 n3及n4為滿足1≦n3+n4≦2之整數。 n5及n6為滿足1≦n5+n6≦2之整數。 n7為2或3。 作為式(A1)所表示之化合物之較佳之具體例,可列舉下述化合物。下述式中,Ra7 分別獨立地表示可具有取代基之碳原子數1~20之烷基、可具有取代基之芳香族基、或可具有取代基之脂環式基。 [化4]作為式(A2)所表示之化合物之較佳之具體例,可列舉下述化合物。 [化5]作為式(A3)所表示之化合物之較佳之具體例,可列舉下述化合物。 [化6]作為進而較佳之硝醯基化合物,可列舉:2,2,6,6-四甲基哌啶1-烴氧基自由基(TEMPO)、4-羥基-2,2,6,6-四甲基哌啶1-烴氧基自由基、4-胺基-2,2,6,6-四甲基哌啶1-烴氧基自由基、4-羧基-2,2,6,6-四甲基哌啶1-烴氧基自由基、4-氰基-2,2,6,6-四甲基哌啶1-烴氧基自由基、4-甲基丙烯酸-2,2,6,6-四甲基哌啶1-烴氧基自由基、4-丙烯酸-2,2,6,6-四甲基哌啶1-烴氧基自由基、4-側氧基-2,2,6,6-四甲基哌啶1-烴氧基自由基、3-羧基-2,2,5,5-四甲基吡咯啶1-烴氧基自由基、4-乙醯胺-2,2,6,6-四甲基哌啶1-烴氧基自由基、4-(2-氯乙醯胺)-2,2,6,6-四甲基哌啶1-烴氧基自由基、4-羥基-2,2,6,6-四甲基哌啶苯甲酸1-烴氧酯自由基、4-異硫氰酸基-2,2,6,6-四甲基哌啶1-烴氧基自由基、4-(2-碘乙醯胺)-2,2,6,6-四甲基哌啶1-烴氧基自由基、及4-甲氧基-2,2,6,6-四甲基哌啶1-烴氧基自由基。 硝醯基化合物可單獨使用,亦可將2種以上組合而使用。 相對於鹵矽烷化合物,上述硝醯基化合物之使用量較佳為0.0001~10莫耳倍之範圍,更佳為0.0005~5莫耳倍之範圍,進而較佳為0.0008~1莫耳倍之範圍,尤佳為0.001~0.1莫耳倍之範圍。 (鹵矽烷化合物) 作為上述鹵矽烷化合物,較佳為下述式(1)所表示之化合物。 Xn SiR4 n (1) (式中,n為2~4之整數,n個X分別獨立地為鹵素原子,(4-n)個R分別獨立地為氫原子、有機基或矽烷基)。 作為X所表示之鹵素原子,可列舉氟原子、氯原子、溴原子或碘原子,較佳為氯原子或溴原子,更佳為氯原子。 作為R所表示之有機基,可列舉:烷基[甲基、乙基、丙基、異丙基、丁基及第三丁基等碳原子數1~10之烷基(較佳為碳原子數1~6之烷基,尤其是碳數1~4之烷基等)]、環烷基(環己基等碳原子數5~8之環烷基,尤其是碳原子數5~6之環烷基)、烯基[乙烯基、丙烯基、丁烯基等碳原子數2~10之烯基(較佳為碳原子數2~6之烯基,尤其是碳數2~4之烯基等)]、環烯基[1-環戊烯基、1-環己烯基等碳原子數5~10之環烯基(較佳為碳原子數5~8之環烯基,尤其是碳數5~7之環烯基等)]、芳基(苯基、萘基等碳原子數6~10之芳基、)、芳烷基[苄基、苯乙基等C6-10 芳基-C1-6 烷基(C6-10 芳基-C1-4 烷基等)]、胺基、N-取代胺基(經上述烷基、環烷基、芳基、芳烷基、醯基等取代之N-單或二取代胺基等)等。上述烷基、環烷基、芳基或構成芳烷基之芳基等可具有1個或複數個取代基。作為此種取代基,可列舉上述例示之烷基(尤其是碳原子數1~6之烷基等)等。作為具有此種取代基之有機基,例如可列舉:甲苯基(甲基苯基)、二甲苯基(二甲基苯基)、乙基苯基、甲基萘基等C1-6 烷基-C6-10 芳基(較佳為單、二或三C1-4 烷基-C6-10 芳基,尤其是單或二C1-4 烷基苯基等)等。 矽烷基可列舉經上述烷基、環烷基、烯基、環烯基、芳基、芳烷基及烷氧基等取代之取代矽烷基。 於n為2之情形(二鹵矽烷化合物)時,作為R,較佳為烷基、芳基等烴基。亦可至少1個R為芳基。 先前,於矽烷基自由基陽離子具有直接鍵結於矽原子之烷基、芳基等有機基(尤其是芳基)之情形時,容易發生上述有機基之脫離,從而會導致釋氣。 相對於此,推定於第1態樣之聚矽烷化合物之製造方法中,即便於矽烷基自由基陽離子具有直接鍵結於矽原子之有機基之情形時(R為有機基(尤其是芳基)之情形時),上述硝醯基化合物亦使矽烷基自由基陽離子進行電荷自旋而矽烷基自由基陽離子減少,藉此不易發生有機基之脫離而可抑制釋氣之產生。 作為代表性二鹵矽烷化合物,例如可列舉:二烷基二鹵矽烷(二甲基二氯矽烷等二C1-10 烷基二鹵矽烷,較佳為二C1-6 烷基二鹵矽烷,進而較佳為二C1-4 烷基二鹵矽烷等)、單烷基單芳基二鹵矽烷(甲基苯基二氯矽烷等單C1-10 烷基單C6-12 芳基二鹵矽烷,較佳為單C1-6 烷基單C6-10 芳基二鹵矽烷,進而較佳為單C1-4 烷基單C6-8 芳基二鹵矽烷等)、二芳基二鹵矽烷(二苯基二氯矽烷等二C6-12 芳基二鹵矽烷,較佳為二C6-10 芳基二鹵矽烷,進而較佳為二C6-8 芳基二鹵矽烷等)等。作為二鹵矽烷化合物,較佳為二烷基二鹵矽烷或單烷基單芳基二鹵矽烷。二鹵矽烷化合物可單獨或將兩種以上組合而使用。 於n為3之情形(三鹵矽烷化合物)時,作為R,較佳為烷基、環烷基、可具有取代基之芳基、芳烷基等烴基,尤佳為烷基或芳基,更佳為芳基。 如上所述,於第1態樣之聚矽烷化合物之製造方法中,即便於矽烷基自由基陽離子具有直接鍵結於矽原子之有機基之情形時(R為有機基(尤其是芳基)之情形時),藉由上述硝醯基化合物之作用,亦不易發生有機基之脫離而可抑制釋氣之產生。 作為代表性三鹵矽烷化合物,可列舉:烷基三鹵矽烷(甲基三氯矽烷、丁基三氯矽烷、第三丁基三氯矽烷、己基三氯矽烷等C1-10 烷基三鹵矽烷,較佳為C1-6 烷基三鹵矽烷,進而較佳為C1-4 烷基三鹵矽烷等)、環烷基三鹵矽烷(環己基三鹵矽烷等單C6-10 環烷基三鹵矽烷等)、芳基三鹵矽烷(苯基三氯矽烷、甲苯基三氯矽烷、二甲苯基三氯矽烷等C6-12 芳基三鹵矽烷,較佳為C6-10 芳基三鹵矽烷,進而較佳為C6-8 芳基三鹵矽烷等)等。三鹵矽烷化合物較佳為烷基三鹵矽烷或芳基三鹵矽烷。 三鹵矽烷化合物可單獨或將兩種以上組合而使用。 作為n為4之情形時(四鹵矽烷化合物)之具體例,例如可列舉:四氯矽烷、二溴二氯矽烷、四溴矽烷等。四鹵矽烷化合物可單獨或將2種以上組合而使用。 再者,四鹵矽烷化合物可與單、二或三鹵矽烷化合物組合使用。 又,作為鹵矽烷化合物,亦可為單鹵矽烷化合物。作為代表性單鹵矽烷,例如可列舉:三烷基單鹵矽烷(三甲基氯矽烷等三C1-10 烷基單鹵矽烷,較佳為三C1-6 烷基單鹵矽烷,進而較佳為三C1-4 烷基單鹵矽烷等)、二烷基單芳基單鹵矽烷(二甲基苯基氯矽烷等二C1-10 烷基單C6-12 芳基單鹵矽烷,較佳為二C1-6 烷基單C6-10 芳基單鹵矽烷,進而較佳為二C1-4 烷基單C6-8 芳基單鹵矽烷等)、單烷基二芳基單鹵矽烷(甲基二苯基氯矽烷等單C1-10 烷基二C6-12 芳基單鹵矽烷,較佳為單C1-6 烷基二C6-10 芳基單鹵矽烷,進而較佳為單C1-4 烷基二C6-8 芳基單鹵矽烷等)、三芳基單鹵矽烷(三苯基氯矽烷等三C6-12 芳基單鹵矽烷,較佳為三C6-10 芳基單鹵矽烷,進而較佳為三C6-8 芳基單鹵矽烷等)等。單鹵矽烷化合物可單獨或將兩種以上組合而使用。 該等鹵矽烷化合物可單獨或將2種以上組合而使用。 鹵矽烷化合物較佳為包含選自二鹵矽烷化合物及三鹵矽烷化合物中之至少1種。 再者,於鹵矽烷化合物包含三鹵矽烷化合物及/或四鹵矽烷化合物之情形時,可生成網路狀(網狀或支鏈狀)之聚矽烷化合物。於獲得網路狀之聚矽烷化合物之情形時,作為代表性鹵矽烷(或其組合),可列舉:(a)烷基三鹵矽烷(例如烷基三鹵矽烷單獨、甲基三鹵矽烷與C2-10 烷基三鹵矽烷之組合、C2-10 烷基三鹵矽烷等)、(b)芳基三鹵矽烷(例如芳基三鹵矽烷單獨)、(c)芳基三鹵矽烷與二鹵矽烷(例如單烷基單芳基二鹵矽烷等)之組合等。 於鹵矽烷化合物中,相對於鹵矽烷總體,選自二鹵矽烷化合物及三鹵矽烷化合物中之至少1種之比例(使用比例)可為50莫耳%以上(例如60莫耳%以上),較佳可為70莫耳%以上(例如80莫耳%以上),進而較佳可為90莫耳%以上(例如95莫耳%以上)。 再者,於獲得網路狀之聚矽烷之情形等時,三鹵矽烷化合物之比例(使用比例)可為鹵矽烷化合物總體之30莫耳%以上(例如40莫耳%以上),較佳可為50莫耳%以上(例如60莫耳%以上),進而較佳可為70莫耳%以上(例如75莫耳%以上),尤其可為80莫耳%以上。 又,於將二鹵矽烷化合物與三鹵矽烷化合物組合之情形時,該等之比率可為二鹵矽烷化合物/三鹵矽烷化合物(莫耳比)=99/1~1/99,較佳可為90/10~2/98(例如85/15~2/98),進而較佳可為80/20~3/97(例如70/30~4/96),尤其可為60/40~5/95(例如50/50~7/93),通常亦可為50/50~5/95(例如45/55~7/93,較佳為40/60~10/90,進而較佳為30/70~88/12)。 鹵矽烷化合物較佳為純度儘可能高。例如,對於液體之鹵矽烷化合物,較佳為使用氫化鈣等乾燥劑進行乾燥,並進行蒸餾而使用,對於固體之鹵矽烷化合物,較佳為藉由再結晶法等進行精製而使用。 再者,原料混合物(反應液)中之鹵矽烷化合物之濃度(基質濃度)例如可為0.05~20 mol/l左右,較佳可為0.1~15 mol/l左右,進而較佳可為0.2~5 mol/l左右。 第1態樣之聚矽烷化合物之製造方法可應用包括使鹵矽烷化合物進行反應之下述(a)~(c)等聚矽烷化合物之製造方法。 (a)將鎂作為還原劑而使鹵矽烷化合物進行脫鹵素縮聚之方法(「鎂還原法」,WO98/29476號公報、日本專利特開2003-277507號公報中所記載之方法等) (b)於金屬鈉、金屬鋰、金屬鉀等(較佳為金屬鈉)鹼金屬之存在下使鹵矽烷化合物進行脫鹵素縮聚之方法(「Kipping法」,J. Am. Chem. Soc., 110, 124 (1988)、Macromolecules, 23, 3423 (1990)等) (c)藉由電極還原使鹵矽烷化合物進行脫鹵素縮聚之方法(J. Chem. Soc., Chem. Commun., 1161 (1990)、J. Chem. Soc., Chem. Commun. 897 (1992)等) 第1態樣之聚矽烷化合物之製造方法較佳為於硝醯基化合物與鎂之存在下使上述鹵矽烷化合物進行反應之鎂還原法、或者於硝醯基化合物與金屬鈉、金屬鋰、金屬鉀等(較佳為金屬鈉)鹼金屬之存在下使上述鹵矽烷化合物進行反應之Kipping法,更佳為於硝醯基化合物與鎂之存在下使上述鹵矽烷化合物進行反應之鎂還原法。 作為鎂,可為金屬鎂(鎂單質)之形態、鎂合金之形態,亦可為該等之混合物等(以下亦稱作「鎂成分」)。 鎂合金之種類並無特別限制,可例示慣用之鎂合金,例如包含鋁、鋅、稀土元素(鈧、釔等)等成分之鎂合金。 作為鎂成分之形狀,只要不損及鹵矽烷化合物之反應,則無特別限定,可例示粉粒狀(粉體、粒狀體等)、帶狀體、切割片狀體、塊狀體、棒狀體、板狀體(平板狀等)等,尤佳為粉體、粒狀體、帶狀體、切割片狀體等。鎂(例如粉粒狀之鎂)之平均粒徑例如可為1~10000 μm,較佳可為10~7000 μm,進而較佳可為15~5000 μm(例如20~3000 μm)。 鎂成分及鹼金屬可單獨使用,亦可將2種以上組合而使用。 鎂成分或鹼金屬之使用量係相對於鹵矽烷化合物之鹵素原子以鎂換算或鹼金屬換算計較佳為1~20當量,更佳為1.1~14當量,進而較佳為1.2~10當量,尤佳為1.2~5當量。 又,鎂成分或鹼金屬之使用量係相對於鹵矽烷化合物以莫耳數計且以鎂或鹼金屬計較佳為1~20倍,更佳為1.1~14倍,進而較佳為1.2~10倍,尤佳為1.2~5倍。 第1態樣之聚矽烷化合物之製造方法亦可於硝醯基化合物、及鎂成分或鹼金屬、與進一步之下述通式(Z1)所表示之有機金屬錯合物之存在下使上述鹵矽烷化合物進行反應。 Mp Lp/q (Z1) (上述通式(Z1)中,Mp 表示p價金屬陽離子,L表示q價有機配位基,p及q分別獨立地表示1以上之整數)。 作為構成p價金屬陽離子Mp 之金屬原子,可列舉:選自由鐵、銀、鋁、鉍、鈰、鈷、銅、鏑、鉺、銪、鎵、釓、鉿、鈥、銦、銥、鑭、鎦、錳、鉬、釹、鎳、鋨、鈀、鉕、鐠、鉑、錸、銠、釕、釤、鈧、錫、鋱、鈦、銩、釩、鉻、鉭、鐿、金、汞、鎢、釔、鋅及鋯所組成之群中之金屬。 作為p,較佳為1~4之整數,更佳為1~3之整數,進而較佳為2或3。 作為q,較佳為1~4之整數,更佳為1~3之整數,進而較佳為1或2。 作為q價有機配位基L,可列舉:β-二酮配位基、烯烴、共軛酮、腈、胺、羧根基配位基、一氧化碳、膦、亞膦酸酯(phosphinite)、亞膦酸二酯(phosphonite)、亞磷酸酯(phosphite)等有機配位基。q價有機配位基L亦可為螯合配位基。 作為上述有機金屬錯合物,較佳為下述通式(Z2)所表示之有機金屬錯合物。 [化7](上述通式(Z2)中,M表示選自由鐵、銀、鋁、鉍、鈰、鈷、銅、鏑、鉺、銪、鎵、釓、鉿、鈥、銦、銥、鑭、鎦、錳、鉬、釹、鎳、鋨、鈀、鉕、鐠、鉑、錸、銠、釕、釤、鈧、錫、鋱、鈦、銩、釩、鉻、鉭、鐿、金、汞、鎢、釔、鋅及鋯所組成之群中之金屬,Rz1 分別獨立地表示飽和烴基、不飽和烴基、芳香族烴基、芳烷基、烷氧基、芳氧基、芳烷氧基或芳氧烷基,Rz2 表示氫原子、飽和烴基、不飽和烴基、芳香族烴基或上述芳烷基。p表示1以上之整數)。 作為Rz1 及Rz2 所表示之飽和烴基,可列舉:甲基、乙基、丙基、異丙基、丁基、異丁基、第二丁基、第三丁基、戊基、己基、庚基、辛基、壬基、癸基、十一烷基、十二烷基、十四烷基、十六烷基、十八烷基、二十烷基、二十二烷基、2-十二烷基十六烷基、三十烷基、三十二烷基、四十烷基等碳數1~40之直鏈狀或支鏈狀烷基,以及該等經鹵素原子(氟原子、氯原子、溴原子、碘原子)、烷氧基(下文將記載者等)、矽烷基(下文將記載者等)等取代基之1種或2種以上取代而成之烷基,例如氯丙基、3,3,3-三氟丙基、3,3,4,4,5,5,6,6,6-九氟己基、十三氟-1,1,2,2-四氫辛基、十七氟-1,1,2,2-四氫癸基、3-(七氟異丙氧基)丙基、三甲基矽烷基甲基等;環丙基、環丁基、環戊基、環己基、雙環庚基、環辛基、金剛烷基等碳數3~18之單環或二環以上之多環之環狀飽和烴基,以及該等環狀飽和烴基經烷基(上述者等)、芳基(上述者等)等取代基之1種或2種以上取代而成者,例如4-第三丁基環己基、4-苯基環己基等;或具有上述環狀飽和烴基之烷基(上述者等),例如環己基甲基、金剛烷基乙基等。 作為Rz1 及Rz2 所表示之不飽和烴基,可列舉:乙烯基、乙炔基、烯丙基、1-丙烯基、炔丙基、丁烯基、戊烯基、己烯基、辛烯基、癸烯基、十二烷烯基、十八烷烯基等碳數2~18之直鏈狀或支鏈狀烯基、炔基,以及該等不飽和烴基經鹵素原子(上述者等)、烷氧基(下文將記載者等)、矽烷基(下文將記載者等)、芳基(下文將記載者等)之取代基之1種或2種以上取代而成者,例如2-三氟甲基乙烯基、2-三氟甲基乙炔基、3-甲氧基-1-丙烯基、3-甲氧基-1-丙炔基、2-三甲基矽烷基乙烯基、2-三甲基矽烷基乙炔基、2-苯基乙烯基、2-苯基乙炔基等;環丙烯基、環己烯基、環辛烯基等碳數3~18之環狀不飽和烴基;具有上述環狀不飽和烴基之烷基(上述者等),例如環己烯基乙基等。 作為Rz1 及Rz2 所表示之芳香族烴基,可列舉:苯基,及甲苯基、丁基苯基、丁氧基苯基等經烷基、烷氧基、胺基等之1種或2種以上取代而成之取代苯基等。 作為Rz1 及Rz2 所表示之芳烷基,可列舉苄基、苯乙基、甲基苯乙基、丁基苯乙基、苯基丙基、甲氧基苯基丙基等,作為雜芳烷基,可列舉吡啶基甲基、吡啶基乙基等。 作為Rz1 所表示之烷氧基,可列舉甲氧基、乙氧基、丙氧基、丁氧基、己氧基、辛氧基等碳數1~18之烷氧基,作為芳氧基,可列舉苯氧基、及甲苯氧基、丁基苯氧基等經烷基等取代基取代而成之取代苯氧基等。 作為Rz1 所表示之芳烷氧基,可列舉苄氧基、苯乙氧基等,作為芳氧烷基,可列舉苯氧基丙基、苯氧基丁基等。 作為Rz1 ,較佳者係碳數為1~30之飽和烴基、芳香族烴基等,進而較佳者係碳數為1~15之烷基、苯基等,尤佳者係甲基。 作為Rz2 ,較佳者係氫原子、碳數為1~18之飽和烴基、芳香族烴基等,進而較佳者係氫原子、碳數為1~10之烷基、苯基、苯基乙基等,尤佳者係氫原子。 p之較佳例係如上所示。 作為金屬錯合物,根據上述金屬M與Rz1 及Rz2 之組合而可列舉各種金屬錯合物。若例示具體例,則可列舉:乙醯丙酮銀(I)、三(乙醯丙酮)鋁(III)、三(2,2,6,6-四甲基-3,5-庚二酮)鋁(III)、三(2,2,6,6-四甲基-3,5-庚二酮)鉍(III)、三(乙醯丙酮)鈰(III)、雙(乙醯丙酮)鈷(II)、三(乙醯丙酮)鈷(III)、三(1,3-二苯基-1,3-丙二酮)鈷(III)、三(3-甲基-2,4-戊二酮)鈷(III)、三(3-苯基-2,4-戊二酮)鈷(III)、三(3-(1-苯基乙基)-2,4-戊二酮)鈷(III)、雙(苯甲醯丙酮)鈷(II)雙(六氟乙醯丙酮)鈷(II)、三(2,2,6,6-四甲基-3,5-庚二酮)鈷(III)、雙(乙醯丙酮)銅(II)、雙(2,2,6,6-四甲基-3,5-庚二酮)銅(II)、三(2,2,4,6,6-五甲基-3,5-庚二酮)鈷(III)、三(2,2,6,6-四甲基-4-(1-苯基乙基)-3,5-庚二酮)鈷(III)、三(2,2,6,6-四甲基-4-苯基-3,5-庚二酮)鈷(III)、雙(六氟乙醯丙酮)銅(II)、雙(三氟乙醯丙酮)銅(II)、三(乙醯丙酮)鏑(III)、三(乙醯丙酮)鉺(III)、三(2,2,6,6,-四甲基-3,5-庚二酮)鉺(III)、三(乙醯丙酮)銪(III)、雙(乙醯丙酮)鐵(II)、三(乙醯丙酮)鐵(III)、三(1,3-二苯基-1,3-丙二酮)鐵(III)、三(3-甲基-2,4-戊二酮)鐵(III)、三(3-苯基-2,4-戊二酮)鐵(III)、三(3-(1-苯基乙基)-2,4-戊二酮)鐵(III)、三(2,2,6,6-四甲基-3,5-庚二酮)鐵(III)、三(2,2,4,6,6-五甲基-3,5-庚二酮)鐵(III)、三(2,2,6,6-四甲基-4-(1-苯基乙基)-3,5-庚二酮)鐵(III)、三(2,2,6,6-四甲基-4-苯基-3,5-庚二酮)鐵(III)、四(乙醯丙酮)鉿(IV)、三(乙醯丙酮)鎵(III)、三(乙醯丙酮)釓(III)、三(乙醯丙酮)鈥(III)、三(乙醯丙酮)銦(III)、三(乙醯丙酮)銥(III)、三(乙醯丙酮)鑭(III)、三(乙醯丙酮)鎦(III)、雙(乙醯丙酮)錳(II)、三(乙醯丙酮)錳(III)、雙(六氟乙醯丙酮)錳(II)、雙(乙醯丙酮)二側氧基鉬(IV)、三(乙醯丙酮)釹(III)、三(2,2,6,6-四甲基-3,5-庚二酮)釹(III)、雙(乙醯丙酮)鎳(II)、雙(2,2,6,6-四甲基-3,5-庚二酮)鎳(II)、雙(六氟乙醯丙酮)鎳(II)、雙(1,3-二苯基-1,3-丙二酮)鎳(II)、雙(3-甲基-2,4-戊二酮)鎳(II)、雙(3-苯基-2,4-戊二酮)鎳(II)、雙(3-(1-苯基乙基)-2,4-戊二酮)鎳(II)、雙(2,2,4,6,6-五甲基-3,5-庚二酮)鎳(II)、雙(2,2,6,6-四甲基-4-(1-苯基乙基)-3,5-庚二酮)鎳(II)、雙(2,2,6,6-四甲基-4-苯基-3,5-庚二酮)鎳(II)、雙(乙醯丙酮)鈀(II)、雙(六氟乙醯丙酮)鈀(II)、雙(1,3-二苯基-1,3-丙二酮)鈀(II)、雙(3-甲基-2,4-戊二酮)鈀(II)、雙(3-苯基-2,4-戊二酮)鈀(II)、雙(3-(1-苯基乙基)-2,4-戊二酮)鈀(II)、雙(2,2,4,6,6-五甲基-3,5-庚二酮)鈀(II)、雙(2,2,6,6-四甲基-4-(1-苯基乙基)-3,5-庚二酮)鈀(II)、雙(2,2,6,6-四甲基-4-苯基-3,5-庚二酮)鈀(II)、三(乙醯丙酮)鉕(III)、三(乙醯丙酮)鐠(III)、三(六氟乙醯丙酮)鐠(III)、雙(乙醯丙酮)鉑(II)、三(乙醯丙酮)銠(III)、三(乙醯丙酮)釕(III)、三(乙醯丙酮)鈧(III)、三(六氟乙醯丙酮)鈧(III)、三(2,2,6,6-四甲基-3,5-庚二酮)鈧(III)、三(乙醯丙酮)釤(III)、三(2,2,6,6-四甲基-3,5-庚二酮)釤(III)、雙(乙醯丙酮)錫(II)、三(乙醯丙酮)鋱(III)、三(2,2,6,6-四甲基-3,5-庚二酮)鋱(III)、三(2,2,6,6-四甲基-3,5-庚二酮)銩(III)、三(乙醯丙酮)釩(III)、三(乙醯丙酮)釔(III)、三(六氟乙醯丙酮)釔(III)、三(2,2,6,6-四甲基-3,5-庚二酮)釔(III)、雙(乙醯丙酮)鋅(II)、雙(六氟乙醯丙酮)鋅(II)、雙(2,2,6,6-四甲基-3,5-庚二酮)鋅(II)、四(乙醯丙酮)鋯(IV)、四(2,2,6,6-四甲基-3,5-庚二酮)鋯(IV)、四(三氟乙醯丙酮)鋯(IV)等。 該等有機金屬錯合物可單獨或將2種以上組合而使用。作為有機金屬錯合物,可使用預先合成之金屬錯合物,亦可使用於系中製造者。 相對於鹵矽烷化合物,上述有機金屬錯合物之使用量較佳為0.001~10莫耳倍之範圍,更佳為0.001~1莫耳倍之範圍,尤佳為0.001~0.1莫耳倍之範圍。 (金屬鹵化物) 第1態樣之聚矽烷化合物之製造方法亦可於硝醯基化合物、及鎂或鹼金屬、與進一步之金屬鹵化物之存在下使上述鹵矽烷化合物進行反應。 作為金屬鹵化物,可列舉:多價金屬鹵化物,例如過渡金屬(例如釤等週期表3A族元素,鈦等週期表4A族元素,釩等週期表5A族元素,鐵、鎳、鈷、鈀等週期表8族元素,銅等週期表1B族元素,鋅等週期表2B族元素等)、週期表3B族金屬(鋁等)、週期表4B族金屬(錫等)等金屬之鹵化物(氯化物、溴化物或碘化物等)。構成金屬鹵化物之上述金屬之價數並無特別限制,較佳為2~4價,尤其是2或3價。該等金屬鹵化物可單獨或將兩種以上組合而使用。 作為金屬鹵化物,較佳為選自鐵、鋁、鋅、銅、錫、鎳、鈷、釩、鈦、鈀、釤等中之至少一種金屬之氯化物或溴化物。 作為此種金屬鹵化物,例如可例示:氯化物(FeCl2 、FeCl3 等氯化鐵;AlCl3 、ZnCl2 、SnCl2 、CoCl2 、VCl2 、TiCl4 、PdCl2 、SmCl2 等)、溴化物(FeBr2 、FeBr3 等溴化鐵等)、碘化物(SmI2 等)等。該等金屬鹵化物中,較佳為氯化物(例如氯化鐵(II)、氯化鐵(III)等氯化鐵,氯化鋅等)及溴化物。通常使用氯化鐵及/或氯化鋅,尤其是氯化鋅等。 作為金屬鹵化物之使用量,相對於鹵矽烷化合物,較佳為0.001~10莫耳倍之範圍,更佳為0.001~1莫耳倍之範圍,尤佳為0.001~0.1莫耳倍之範圍。 又,溶劑(反應液)中之金屬鹵化物之濃度通常為0.001~6 mol/L左右,較佳可為0.005~4 mol/L,進而較佳可為0.01~3 mol/L左右。 (非質子性溶劑) 第1態樣之聚矽烷化合物之製造方法中之硝醯基化合物之存在下的鹵矽烷化合物之反應較佳為於溶劑(反應溶劑)中進行,更佳為於非質子性溶劑中進行。 作為溶劑(反應溶劑)之非質子性溶劑中例如包含:醚類(1,4-二㗁烷、四氫呋喃、四氫吡喃、二乙醚、二異丙醚、1,2-二甲氧基乙烷、雙(2-甲氧基乙基)醚等環狀或鏈狀C4-6 醚)、碳酸酯類(碳酸丙二酯等)、腈類(乙腈、苯甲腈等)、醯胺類(二甲基甲醯胺、二甲基乙醯胺等)、亞碸類(二甲基亞碸等)、芳香族烴類(苯、甲苯、二甲苯等)、脂肪族烴類(例如己烷、環己烷、辛烷、環辛烷等鏈狀或環狀烴類)等。 該等非質子性溶劑可單獨或將兩種以上組合而以混合溶劑之形式使用。該等溶劑中,較佳為至少使用極性溶劑[例如醚類[例如四氫呋喃、1,2-二甲氧基乙烷、雙(2-甲氧基乙基)醚、1,4-二㗁烷等(尤其是四氫呋喃、1,2-二甲氧基乙烷)]。極性溶劑可單獨或將兩種以上組合而使用,亦可將極性溶劑與非極性溶劑組合。 於第1態樣之聚矽烷化合物之製造方法中,亦可進而包括:使上述反應後之液(反應液)與包含選自由鹼及酸所組成之群中的至少1種之水溶液接觸而進行精製,藉此獲得上述聚矽烷化合物。 藉由使上述聚矽烷化合物與鹼或酸接觸而進行精製處理,可將鹵素原子(例如鹵離子(氯化物離子等)、聚矽烷化合物中殘留之Si-Cl)等夾雜物去除,又,可促進聚矽烷化合物之低分子量化,可提高上述聚矽烷化合物之溶劑溶解性。 又,酸亦可發揮作為上述鹵矽烷化合物之反應之淬滅劑之功能。 又,藉由使上述聚矽烷化合物與下述金屬鹵化物接觸而進行精製處理,可將聚矽烷化合物中殘留之金屬原子(例如Mg、Zn等)去除。 處理溫度較佳為-50℃~溶劑之沸點左右,進而較佳為室溫~100℃。 又,作為所使用之鹼,只要為呈鹼性之化合物,則可使用各種,例如可使用:氫氧化鈉、氫氧化鉀、氫氧化鋇、氨、氫氧化四甲基銨、碳酸鈉、碳酸氫鈉、碳酸鉀、氫化鋰、氫化鈉、氫化鉀、氫化鈣等無機鹼類;甲基鋰、正丁基鋰、氯化甲基鎂、溴化乙基鎂等烷基金屬類;包含Cr、Ga、Fe(Fe(II)、Fe(III))、Cd、Co、Ni、Sn、Pb、Cu(Cu(II)、Cu(I))、Ag、Pd、Pt、Au等金屬(或金屬離子)之金屬鹵化物;甲醇鈉、乙醇鈉、第三丁醇鉀等烷醇鹽類;三乙基胺、二異丙基乙基胺、N,N-二甲基苯胺、吡啶、4-二甲胺基吡啶、二氮雜雙環十一烯(DBU)等有機鹼類。 作為所使用之酸,可使用各種,可使用氯化氫等無機酸。 此處,作為用於上述鹼或酸處理之溶劑,可使用各種,例如可使用選自以下溶劑中之1種以上:苯、甲苯、二甲苯等烴系溶劑,丙二醇單甲醚、丙二醇單乙醚等二醇系溶劑,二乙醚、二異丙醚、二丁醚、四氫呋喃、1,4-二㗁烷等醚系溶劑,丙酮、甲基乙基酮、甲基異丁基酮、甲基戊基酮、環戊酮、環己酮等酮系溶劑,乙醇、異丙醇、丁醇等醇系溶劑。 又,含環狀骨架之乙酸酯化合物亦可較佳地用作上述鹼性條件下之處理所使用之溶劑。 作為含環狀骨架之乙酸酯化合物,只要為不損及本發明之效果的具有環狀骨架之乙酸酯系溶劑,則無特別限制,較佳為下述式(S1)所表示之乙酸環烷基酯。 [化8](式(S1)中,Rs1 分別獨立地為烷基,p為1~6之整數,q為0~(p+1)之整數)。 作為Rs1 所表示之烷基,可列舉碳原子數1~3之烷基,可列舉甲基、乙基、正丙基、異丙基。 作為式(S1)所表示之乙酸環烷基酯之具體例,可列舉乙酸環丙酯、乙酸環丁酯、乙酸環戊酯、乙酸環己酯、乙酸環庚酯、及乙酸環辛酯。 該等中,就獲取容易性等觀點而言,較佳為乙酸環己酯。 亦可藉由酸處理將上述鹵矽烷化合物之反應淬滅。 作為所使用之酸,可使用各種,可使用氯化氫等無機酸。 根據第1態樣之聚矽烷化合物之製造方法,能以產率50%以上獲得聚矽烷化合物,較佳為產率70%以上。 <聚矽烷化合物> 根據第1態樣之聚矽烷化合物之製造方法,如上所述,可抑制矽氧烷鍵、矽烷醇基等副反應物之生成,故而可減少聚矽氧烷化合物中之矽氧烷鍵(Si-O)之存在量。 根據第1態樣之聚矽烷化合物之製造方法,可將下述(2X)相對於下述(1X)及(2X)之波峰面積之和的比、即下述式(3X)所表示之比率設為0.4以下,上述(1X)及(2X)之波峰面積係將聚矽烷化合物中之藉由X射線光電子光譜法所測得的於99 eV以上且104 eV以下之鍵能範圍內具有最大檢測波峰高度之光譜進行波峰分離而求出,上述比率較佳為0.35以下,更佳為0.3以下,進而較佳為0.2以下,尤佳為0.1以下,最佳為0.05以下。 (1X)・・・於鍵能為99.0 eV以上且99.5 eV以下之範圍內具有最大波峰高度之波峰之面積 (2X)・・・於鍵能為100 eV以上且104 eV以下之範圍內具有最大波峰高度之波峰之面積 (3X)・・・(2X)/[(1X)+(2X)] 測定波峰之強度(Intensity),關於上述(1X)及(2X)之於各鍵能範圍內進行波峰分離而求出之波峰之面積,根據(2X)之於鍵能為100 eV以上且104 eV以下之範圍內具有最大波峰高度之波峰之面積可知Si-O及Si-C之含有比例。又,根據(1X)之於鍵能為99.0 eV以上且99.5 eV以下之範圍內具有最大波峰高度之波峰之面積可知Si-Si之含有比例。 認為於聚矽烷化合物不僅包含Si-C還包含Si-O之情形時,於100 eV以上且104 eV以下之範圍內,於波峰分離後重疊出現2個具有最大波峰高度之波峰,但第2態樣之聚矽烷化合物較佳為於100 eV以上且104 eV以下之範圍內,於波峰分離後僅出現1個具有最大波峰高度之波峰,由於較理想為僅出現1個波峰,故而實質上不含Si-O鍵。 又,於先前之聚矽烷化合物不僅包含Si-C還包含Si-O之情形時,於100 eV以上且104 eV以下之範圍內,於波峰分離後重疊出現2個具有最大波峰高度之波峰,故而面積比變大,因此上述式所表示之比率超過0.4。 第2態樣之聚矽烷化合物係藉由以上所說明之第1態樣之製造方法所製造之聚矽烷化合物。 作為藉由第1態樣之製造方法所製造之第2態樣之聚矽烷化合物,例如可列舉Si原子數3~40之聚矽烷化合物,較佳為Si原子數5~30之聚矽烷化合物。 上述聚矽烷化合物較佳為選自由下述通式(T-1)及(T-2)所表示之聚矽烷化合物所組成之群中之至少1種。 (Rt10 Rt11 Rt12 Si)t1 (Rt13 Rt14 Si)t2 (Rt15 Si)t3 (Si)t4 (T-1) (上述通式中,Rt10 、Rt11 、Rt12 、Rt13 、Rt14 及Rt15 分別獨立地為氫原子、羥基或有機基。t1、t2、t3及t4分別獨立地為莫耳分率,為t1+t2+t3+t4=1、0≦t1≦1、0≦t2≦1、0≦t3≦1及0≦t4≦1)。 [化9](上述通式(T-2)中,Rt16 及Rt17 分別獨立地表示氫原子、羥基或有機基。U表示3~20之整數) 作為Rt10 ~Rt17 所表示之有機基,可列舉與上文中作為R所表示之有機基所述之具體例及較佳例相同者。 作為Rt10 ~Rt17 所表示之有機基,例如亦可藉由日本專利特開2003-261681號公報第0031段中所記載之方法導入任意之有機基。 作為上述聚矽烷化合物之質量平均分子量(Mw),只要不妨礙本發明之目的,則無特別限制,較佳為500~10000,更佳為1000~7000,進而較佳為2000~5000。 於本說明書中,質量平均分子量(Mw)係藉由凝膠滲透層析法(GPC)之聚苯乙烯換算所得之測定值。 <組合物> 第3態樣之組合物係包含藉由第1態樣之製造方法所製造之第2態樣之聚矽烷化合物的組合物。 又,就抑制釋氣產生及微裂產生之觀點而言,第3態樣之組合物較佳為進而含有上述硝醯基化合物。 作為使第3態樣之組合物進而含有上述硝醯基化合物之方法,只要不損及本發明之效果,則無特別限制,可藉由使第1態樣之製造方法中所使用之上述硝醯基化合物殘留於第3態樣之組合物中而達成,亦可藉由向包含第2態樣之聚矽烷化合物之組合物中添加上述硝醯基化合物而達成。 上述硝醯基化合物可單獨使用,亦可將2種以上組合而使用。 相對於第3態樣之組合物之溶劑以外之成分的合計質量,第3態樣之組合物中之上述硝醯基化合物之含量較佳為0.005質量%以上,更佳為0.009質量%以上。 又,相對於第3態樣之組合物之溶劑以外之成分的合計質量,第3態樣之組合物中之上述硝醯基化合物之含量較佳為2質量%以下,更佳為1質量%以下。 又,第3態樣之組合物可為熱硬化性組合物,亦可不為熱硬化性組合物。 又,第3態樣之組合物可為輻射敏感性組合物,亦可不為輻射敏感性組合物,可為藉由曝光而對顯影液可溶化之正型輻射敏感性組合物,亦可為藉由曝光而對顯影液不溶化之負型輻射敏感性組合物。 作為上述放射線之光源,可列舉:紫外線、準分子雷射光等活性能量射線;高壓水銀燈、超高壓水銀燈、氙氣燈、碳弧燈等發出紫外線之光源等。 (溶劑) 第3態樣之組合物較佳為含有溶劑。作為溶劑,可列舉:上述式(S1)所表示之乙酸環烷基酯等上述含環狀骨架之乙酸酯化合物; 甲醇、乙醇、丙醇、正丁醇等醇類; 乙二醇、二乙二醇、丙二醇、二丙二醇等多元醇類; 丙酮、甲基乙基酮、環己酮、甲基正戊基酮、甲基異戊基酮、2-庚酮等酮類; γ-丁內酯等含內酯環之有機溶劑; 乙二醇單乙酸酯、二乙二醇單乙酸酯、丙二醇單乙酸酯、或二丙二醇單乙酸酯等具有酯鍵之化合物,上述多元醇類或上述具有酯鍵之化合物之單甲醚、單乙醚、單丙醚、單丁醚等單烷基醚或單苯基醚等具有醚鍵之化合物等多元醇類之衍生物; 如二㗁烷般之環式醚類,或乳酸甲酯、乳酸乙酯、乙酸甲酯、乙酸乙酯、乙酸丁酯、丙酮酸甲酯、丙酮酸乙酯、甲氧基丙酸甲酯、乙氧基丙酸乙酯等酯類; 苯甲醚、乙基苄基醚、甲苯酚基甲基醚、二苯基醚、二苄基醚、苯乙醚、丁基苯基醚、乙基苯、二乙基苯、戊基苯、異丙基苯、甲苯、二甲苯、異丙基甲苯、均三甲苯等芳香族系有機溶劑; N,N,N',N'-四甲基脲、N,N,2-三甲基丙醯胺、N,N-二甲基乙醯胺、N,N-二甲基甲醯胺、N,N-二乙基乙醯胺、N,N-二乙基甲醯胺、1,3-二甲基-2-咪唑啶酮、N-甲基吡咯啶酮、N-乙基吡咯啶酮等含氮之有機溶劑。 其中,較佳為上述式(S1)所表示之乙酸環烷基酯、丙二醇單甲醚乙酸酯(PGMEA)、丙二醇單甲醚(PGME)、N,N,N',N'-四甲基脲(TMU)、及丁醇,更佳為乙酸環丙酯、乙酸環丁酯、乙酸環戊酯、乙酸環己酯、乙酸環庚酯或乙酸環辛酯,進而較佳為乙酸環己酯。 該等溶劑亦可將2種以上組合而使用。 關於第3態樣之組合物,就抑制微裂之方面而言,第3態樣之組合物之水分量較佳為1.0質量%以下,更佳為0.5質量%以下,進而較佳為0.3質量%以下,尤佳為未達0.3質量%。再者,溶劑中之水分量可藉由卡氏測定法進行測定。 第3態樣之組合物之水分大多情況下來自溶劑。因此,較佳為以第3態樣之組合物之水分量成為上述量之方式將溶劑進行脫水。 關於溶劑之使用量,於不妨礙本發明之目的之範圍內並無特別限定。就製膜性之方面而言,溶劑係以第3態樣之組合物之固形物成分濃度較佳為成為1~50質量%、更佳為成為10~40質量%之方式使用。 (其他成分) 第3態樣之組合物亦可包含第2態樣之聚矽烷化合物以外之聚矽烷。例如,就提高耐化學品性等方面而言,可列舉Mw較高之聚矽烷化合物(以下亦簡稱為「高分子量聚矽烷」),作為高分子量聚矽烷之Mw,例如為超過5000且100000以下,較佳為6000~60000左右。 就提高加工性之方面而言,第3態樣之組合物亦可包含聚矽烷化合物以外之含矽樹脂。作為聚矽烷化合物以外之含矽樹脂,可列舉聚矽氧烷樹脂、或具有聚矽烷結構(I-1)及聚矽氧烷結構(I-2)之聚矽烷-聚矽氧烷樹脂。作為聚矽烷化合物以外之含矽樹脂之Mw,較佳為500~20000,更佳為1000~10000,進而較佳為2000~8000。 再者,上述聚矽烷-聚矽氧烷樹脂例如可藉由如下方式而製造:於溶劑中且上述鹼性條件下對第2態樣之聚矽烷化合物進行處理後,使其與選自由以下物質所組成之群中之至少1種進行水解縮合反應:選自由下述通式(A-1-1)~(A-1-4)所表示之矽化合物所組成之群中的至少1種矽化合物以及上述矽化合物之水解物、縮合物及水解縮合物。 R1 R2 R3 SiX1 (A-1-1) R4 R5 SiX2 2 (A-1-2) R6 SiX3 3 (A-1-3) SiX4 4 (A-1-4) (上述通式中,X1 ~X4 分別獨立地為水解性基,R1 、R2 、R3 、R4 、R5 及R6 分別獨立地為氫原子或有機基,該有機基中之氫原子亦可經鹵素原子取代)。 作為X1 ~X4 所表示之水解性基,可列舉烷氧基、鹵素原子或異氰酸基(NCO)等,較佳為烷氧基。 作為上述烷氧基,可列舉碳原子數1~6之烷氧基,具體而言可列舉:甲氧基、乙氧基、正丙氧基、異丙氧基、正丁氧基、第三丁氧基、戊氧基等。 作為上述鹵素原子,可列舉氟原子、氯原子、溴原子或碘原子,較佳為氯原子。 作為R1 ~R6 所表示之有機基,可列舉碳數1~30之有機基,可列舉:烷基[甲基、乙基、正丙基、異丙基、正丁基及第三丁基等碳原子數1~10之烷基(較佳為碳原子數1~6之烷基,尤其是碳數1~4之烷基等)]、環烷基(環己基等碳原子數5~8之環烷基,尤其是碳原子數5~6之環烷基)、烯基[乙烯基、丙烯基、丁烯基等碳原子數2~10之烯基(較佳為碳原子數2~6之烯基,尤其是碳數2~4之烯基等)]、環烯基[1-環戊烯基、1-環己烯基等碳原子數5~10之環烯基(較佳為碳原子數5~8之環烯基,尤其是碳數5~7之環烯基等)]、芳基(苯基、萘基等碳原子數6~10之芳基、)、芳烷基[苄基、苯乙基等C6-10 芳基-C1-6 烷基(C6-10 芳基-C1-4 烷基等)]、胺基、N-取代胺基(經上述烷基、環烷基、芳基、芳烷基、醯基等取代之N-單或二取代胺基等)等。上述烷基、環烷基、芳基或構成芳烷基之芳基等可具有1個或複數個取代基。作為此種取代基,可列舉上述例示之烷基(尤其是碳原子數1~6之烷基等)、上述例示之烷氧基等。作為具有此種取代基之有機基,例如可列舉:甲苯基、二甲苯基、乙基苯基、甲基萘基等C1-6 烷基-C6-10 芳基(較佳為單、二或三C1-4 烷基-C6-10 芳基,尤其是單或二C1-4 烷基苯基等);甲氧基苯基、乙氧基苯基、甲氧基萘基等C1-10 烷氧基C6-10 芳基(較佳為C1-6 烷氧基C6-10 芳基,尤其是C1-4 烷氧基苯基等)等。 又,上述通式(A-1-3)所表示之矽化合物亦可為下述式(A-3)所表示之矽化合物。 HOOC-U-Z-Y-Si(ORa )3 (A-3) (上述通式(A-3)中,U表示藉由自芳香族環基或脂環基中對2個環碳原子各去掉1個氫原子而生成之2價基、或可具有支鏈及/或雙鍵之伸烷基,Z表示-NHCO-或-CONH-,Y表示單鍵、伸烷基、伸芳基或-RY1 -NH-RY2 -(式中,RY1 及RY2 分別獨立地表示伸烷基),Ra 分別獨立地表示烴基。其中,U及/或Y可具有選自由(甲基)丙烯酸基、乙烯基及環氧基所組成之群中之至少1種基作為取代基)。 作為上述U中之芳香族環,可列舉可具有碳數1~2之取代基的碳數6~10之芳香環(例如苯環、萘環、甲苯基、二甲苯基等)。 作為上述U中之脂環,可列舉:碳數5~10之脂環(例如可列舉單環環烷基、單環環烯基、二環式烷基、籠型烷基等,具體而言,例如為環戊烷環、環己烷環、環庚烷環、環辛烷環、環壬烷環、環癸烷環、二環戊二烯環、降𦯉烷環、降𦯉烯環、立方烷環、籃烷環等)。 作為上述U中之可具有支鏈及/或雙鍵之伸烷基,可列舉碳數1~4之伸烷基,例如可列舉:亞甲基、伸乙基、伸丙基、伸乙烯基、(2-辛烯基)伸乙基、(2,4,6-三甲基-2-壬烯基)伸乙基等伸烷基、具有雙鍵之伸烷基或具有碳數1~9之支鏈之伸烷基。 作為上述Y中之伸烷基,可列舉碳數1~6之伸烷基,例如可列舉:亞甲基、伸乙基、伸丙基、伸丁基等。作為上述Y中之伸芳基,較佳為碳數6~10者。作為此種伸芳基,例如可列舉:伸苯基(鄰、間或對等)、伸萘基(1,4-、1,5-、2,6-等)等。作為上述Y中之-RY1 -NH-RY2 -,具體而言,例如可列舉:-CH2 -NH-CH2 -、-(CH2 )2 -NH-(CH2 )2 -、-(CH2 )3 -NH-(CH2 )3 -、-CH2 -NH-(CH2 )2 -、-(CH2 )2 -NH-CH2 -、-(CH2 )2 -NH-(CH2 )3 -、-(CH2 )3 -NH-(CH2 )2 -、-CH2 -NH-(CH2 )3 -、-(CH2 )3 -NH-CH2 -等。 作為聚矽氧烷樹脂,可列舉選自由以下物質所組成之群中之至少1種:選自由上述通式(A-1-1)~(A-1-4)所表示之矽化合物所組成之群中的至少1種矽化合物之水解物、縮合物及水解縮合物。 上述第1態樣之聚矽烷化合物以外之樹脂(以下稱作其他Si樹脂)可單獨使用,亦可將複數種組合而使用。 於包含上述其他Si樹脂之情形時,第3態樣之組合物中之第1態樣之聚矽烷化合物與其他Si樹脂的調配比(質量比)只要視用途而適當地變更即可,例如為1:99~99:1,較佳為10:90~90:10。 第3態樣之組合物亦可包含1分子中具有2個以上之羥基或羧基之有機化合物作為對鹼性水溶液或溶液之溶解促進劑。作為此種有機化合物,可列舉下述所示之化合物。 [化10][化11][化12]再者,上述結構式中之E為氫原子、甲基或羥甲基,R15 為亞甲基、羰基或伸苯基,n為3以上且未達100之整數。na表示1~3之自然數,nb表示1以上之自然數,nc表示2~4之自然數,nd表示2以上之自然數。 上述結構式中可能存在鏡像異構物(enantiomer)或非鏡像異構物(diastereomer),各結構式係代表性地表示該等立體異構物全部。該等立體異構物可單獨使用,亦可以混合物之形式而使用。 上述有機化合物可單獨使用1種或將2種以上組合而使用。相對於第3態樣之組合物之除溶劑以外之固形物成分總量,其使用量較佳為0.001~50質量%,更佳為0.01~30質量%。 藉由添加此種有機化合物,而於在製造製程中之加工時將樹脂組合物膜去除之情形或對樹脂組合物賦予有微影性能之情形時,使用上述組合物而形成之膜之崩解加速而剝離變得容易。 為了提高穩定性,第3態樣之組合物中亦可包含碳數為1~30之一元或二元以上之有機酸。作為此時添加之酸,可列舉:甲酸、乙酸、丙酸、丁酸、戊酸、己酸、庚酸、辛酸、壬酸、癸酸、油酸、硬脂酸、亞麻油酸、次亞麻油酸、苯甲酸、鄰苯二甲酸、間苯二甲酸、對苯二甲酸、水楊酸、三氟乙酸、單氯乙酸、二氯乙酸、三氯乙酸、草酸、丙二酸、甲基丙二酸、乙基丙二酸、丙基丙二酸、丁基丙二酸、二甲基丙二酸、二乙基丙二酸、琥珀酸、甲基琥珀酸、戊二酸、己二酸、伊康酸、馬來酸、富馬酸、檸康酸、檸檬酸等。該等中,尤佳為草酸、馬來酸、甲酸、乙酸、丙酸、檸檬酸等。又,為了保持穩定性,亦可將2種以上之酸混合而使用。較佳為以換算成組合物之pH值而較佳為成為0≦pH值≦7、更佳為成為0.3≦pH值≦6.5、進而較佳為成為0.5≦pH值≦6之方式調配上述有機酸。 又,第3態樣之組合物亦可包含具有環狀醚作為取代基之一元或二元以上之醇、或醚化合物作為穩定劑。作為可使用之穩定劑,具體而言可列舉日本專利特開2009-126940號公報之(0180)~(0184)段落所記載之穩定劑。 第3態樣之組合物亦可包含水。藉由添加水,微影性能提高。第3態樣之組合物之溶劑成分中之水之含有率較佳為超過0質量%且未達50質量%,更佳為0.3~30質量%,進而較佳為0.5~20質量%。 第3態樣之組合物亦可包含光酸產生劑。作為可使用之光酸產生劑,具體而言可列舉日本專利特開2009-126940號公報之(0160)~(0179)段落所記載之光酸產生劑。 第3態樣之組合物視需要亦可包含界面活性劑。作為可使用之界面活性劑,具體而言可列舉日本專利特開2009-126940號公報之(0185)段落所記載之界面活性劑。 第3態樣之組合物亦可包含熱交聯促進劑。作為可使用之熱交聯促進劑,具體而言可列舉日本專利特開2007-302873號公報中所記載之熱交聯促進劑。作為熱交聯促進劑,例如可列舉磷酸鹽化合物或硼酸鹽化合物。作為此種磷酸鹽化合物,例如可列舉:磷酸銨、磷酸四甲基銨、磷酸四丁基銨等銨鹽;磷酸三苯基鋶等鋶鹽。又,作為此種硼酸鹽化合物,例如可列舉:硼酸銨、硼酸四甲基銨、硼酸四丁基銨等銨鹽;硼酸三苯基鋶等鋶鹽。 再者,上述熱交聯促進劑可單獨使用1種或將2種以上組合而使用。又,相對於上述組合物之除溶劑以外之固形物成分總量,熱交聯促進劑之添加量較佳為0.01~50質量%,更佳為0.1~40質量%。 第3態樣之組合物亦可包含其他各種硬化劑。 作為硬化劑,例如可列舉:布忍斯特酸;咪唑類;有機胺類;有機磷化合物及其錯合物;路易斯酸之有機胺錯合物;脒類;藉由光或熱而產生鹼成分之硬化劑等。 (用途) 第3態樣之組合物可用作形成保護各種基板(包括含金屬氧化物之膜、含各種金屬之膜)之保護膜或層間膜之用途。 作為上述各種基板,可列舉:半導體基板、液晶顯示器、有機發光顯示器(OLED)、電泳顯示器(電子紙)、觸控面板、彩色濾光片、背光裝置等顯示器材料之基板(包括含金屬氧化物之膜、含各種金屬之膜)、太陽電池之基板(包括含金屬氧化物之膜、含各種金屬之膜)、光感測器等光電轉換元件之基板(包括含金屬氧化物之膜、含各種金屬之膜)、光電元件之基板(包括含金屬氧化物之膜、含各種金屬之膜)。 <硬化物及具備上述硬化物之基板> 第4態樣之硬化物係第3態樣之組合物之硬化物。 第5態樣之基板係具備第4態樣之硬化物之基板。 作為形成第4態樣之硬化物之方法,只要不損及本發明之效果,則無特別限制,可列舉如下方法:視需要使用輥式塗佈機、反向塗佈機、棒式塗佈機等接觸轉印型塗佈裝置或旋轉器(旋轉式塗佈裝置)、淋幕式塗佈機等非接觸型塗佈裝置塗佈於任意之基板上。 作為基板,並無特別限制,例如可列舉:玻璃基板、石英基板、透明或半透明之樹脂基板(例如聚碳酸酯、聚對苯二甲酸乙二酯、聚醚碸、聚醯亞胺、聚醯胺醯亞胺等耐熱性材料等)、金屬、矽基板等。 亦可為半導體基板、液晶顯示器、有機發光顯示器(OLED)、電泳顯示器(電子紙)、觸控面板、彩色濾光片、背光裝置等顯示器材料之基板(包括含金屬氧化物之膜、含各種金屬之膜)、太陽電池之基板(包括含金屬氧化物之膜、含各種金屬之膜)、光感測器等光電轉換元件之基板(包括含金屬氧化物之膜、含各種金屬之膜)、光電元件之基板(包括含金屬氧化物之膜、含各種金屬之膜)等各種基板。 基板之厚度並無特別限定,可根據圖案形成體之使用態樣而適當地選擇。 上述塗佈後之塗膜較佳為進行乾燥(預烘烤)。乾燥方法並無特別限定,例如可列舉:(1)利用加熱板於80~120℃、較佳為90~100℃之溫度下乾燥60~120秒之方法;(2)於室溫下放置數小時~數日之方法;(3)放入至熱風加熱器或紅外線加熱器中數十分鐘~數小時而將溶劑去除之方法等。 上述乾燥後之塗膜可照射紫外線、準分子雷射光等活性能量射線而進行曝光,亦可不進行曝光。所照射之能量射線量並無特別限制,例如可列舉30~2000 mJ/cm2 左右。曝光步驟亦可代替下述焙燒步驟或與焙燒步驟一併進行。又,於曝光步驟中,例如亦可選擇性地對所形成之塗佈膜進行曝光,於包括選擇性曝光步驟之情形時,亦可包括顯影步驟。又,例如亦可對所形成之塗佈膜進行壓印微影。於進行壓印微影之情形時,例如可列舉包括如下步驟之方法: 將第3態樣之組合物塗佈於基板上而形成塗佈膜之步驟; 對塗佈膜按壓形成有特定圖案之凹凸結構之模具之步驟;及 進行曝光之步驟。 進行曝光之步驟係於將模具按壓至塗佈膜之狀態下對包含第3態樣之組合物之塗佈膜進行。藉由曝光進行硬化後,將上述模具剝離,藉此可獲得根據模具之形狀而經圖案化之第4態樣之硬化物。 就提高膜物性之方面而言,上述乾燥後、曝光後或顯影後之塗膜較佳為進行焙燒(後烘烤)。 焙燒溫度亦取決於下層基板或使用用途,例如為200~1000℃之範圍,較佳為200℃~500℃,更佳為200~250℃。焙燒氛圍並無特別限定,可為氮氣氛圍或氬氣氛圍等惰性氣體氛圍下、真空下、或減壓下。亦可為大氣下,亦可適當地控制氧氣濃度。焙燒時間只要適當地進行變更即可,為10分鐘~120分鐘左右。 第4態樣之硬化物較佳為保護上述各種基板(包括含金屬氧化物之膜、含各種金屬之膜)之保護膜。 於硬化物為膜之情形時,厚度較佳為10 nm~10000 nm,更佳為50~5000 nm,進而較佳為100~3000 nm。 <聚矽烷化合物之製造中之陰離子聚合選擇促進劑> 第6態樣之陰離子聚合選擇促進劑係含有包含上述通式(A)所表示之結構之硝醯基化合物的聚矽烷化合物之製造中之陰離子聚合選擇促進劑。 第6態樣之陰離子聚合選擇促進劑可使製造聚矽烷化合物時所產生之矽烷基自由基陽離子進行電荷自旋而轉變為矽烷基自由基陰離子,從而選擇性地促進矽烷基自由基陰離子之陰離子聚合。藉此,可抑制導致微裂之矽氧烷鍵、矽烷醇基等副反應物之生成,又,亦可抑制釋氣之產生。 作為包含上述通式(A)所表示之結構之硝醯基化合物的具體例及較佳例,如第1態樣之聚矽烷化合物之製造方法中所述。 相對於聚矽烷化合物製造中所使用之鹵矽烷化合物,第6態樣之陰離子聚合選擇促進劑之使用量較佳為0.0001~10莫耳倍之範圍,更佳為0.001~5莫耳倍之範圍,進而較佳為0.001~1莫耳倍之範圍,尤佳為0.001~0.1莫耳倍之範圍。 [實施例] 以下根據實施例更詳細地對本發明進行說明,但本發明不受該等實施例之限定。 [實施例1]聚矽烷化合物之製造 向安裝有三通活栓之內容積1000 ml之圓型燒瓶中加入粒狀(粒徑20~1000 μm)之鎂25 g、作為觸媒之三(乙醯丙酮)鐵(III)2.1 g、4-羥基-TEMPO(4-羥基-2,2,6,6-四甲基哌啶1-烴氧基自由基)0.61毫莫耳(0.10 g),於50℃下加熱減壓至1 mmHg(=133 kPa),將反應器(燒瓶)內部進行乾燥後,向反應器內導入乾燥氬氣,添加預先經鈉-二苯甲酮羰自由基乾燥之四氫呋喃(THF)500 ml,於25℃下攪拌約60分鐘。利用注射器向該反應混合物中添加預先藉由蒸餾而精製之甲基苯基二氯矽烷63.5 g(0.3 mol),於25℃下攪拌約24小時。反應結束後,向反應混合物中投入1 N(=1 mol/L)之鹽酸1000 ml,繼而利用甲苯500 ml進行萃取。利用純水200 ml將甲苯層洗淨10次,利用無水硫酸鎂將甲苯層乾燥後,將甲苯蒸餾去除,藉此獲得甲基苯基矽烷聚合物(質量平均分子量2000)28.4 g(產率63%)。 [實施例2~4以及比較例1及2]聚矽烷化合物之製造 如下述表1所示般變更鹵矽烷化合物之種類、有機金屬錯合物或金屬鹵化物之種類、硝醯基化合物之有無及所製造之聚矽烷化合物之種類,除此以外,以與實施例1相同之方式進行實施例2~4以及比較例1及2之聚矽烷化合物之製造。再者,實施例5除了添加硝醯基化合物以外,依照JACS, 110, 124 (1998)及Macromolecules, 23, 3423 (1990)中所記載之方法進行製造。 [表1] [製備例1~4以及比較製備例1及2]組合物之製備 使上述實施例1~4以及比較例1及2中所獲得之各聚矽烷化合物以固形物成分濃度成為30質量%之方式溶解於表2所記載之種類之溶劑中,並利用孔徑0.1 μm之氟樹脂製之過濾器進行過濾,藉此製備製備例1~4以及比較製備例1及2之各組合物。 [覆膜之形成] 使用旋轉塗佈機將所獲得之各製備例及比較製備例之組合物塗佈於樣品基板上,形成可形成膜厚5.0 μm之覆膜的膜厚之塗佈膜。 於100℃下將塗佈膜預烘烤2分鐘後,使用立式烘烤爐(TS8000MB,東京應化工業股份有限公司製造)於350℃下將塗佈膜焙燒30分鐘,獲得膜厚5.0 μm之覆膜。 對於所形成之覆膜,依照下述方法對有無微裂及是否產生釋氣進行評價。 <微裂之評價> 使用光學顯微鏡(倍率100倍)觀察所形成之覆膜之放置24小時後之表面,評價微裂之有無。將結果示於表2。 <釋氣之評價> 又,根據升溫脫離氣體分析法(TDS)評價釋氣產生之程度。確認到使用比較製備例1及2之組合物所形成之覆膜之釋氣產生量多於使用含有實施例1~5之聚矽烷化合物之製備例1~5之組合物所形成之任一覆膜。 [表2] 由表2所示之結果表明:使用含有未使用硝醯基化合物而製造之比較例1及2之聚矽烷化合物的比較製備例1及2之組合物所形成之覆膜產生了微裂及釋氣。 另一方面,使用含有使用硝醯基化合物而製造之實施例1~5之聚矽烷化合物的製備例1~5之組合物所形成之覆膜均未見微裂,釋氣之產生亦得到抑制。The embodiments of the present invention are described in detail below, but the present invention is not limited to the following embodiments, and may be appropriately modified within the scope of the object of the present invention. In the present specification, "~" means the above or below unless otherwise specified. <Method for Producing Polydecane Compound> The method for producing a polydecane compound according to the first aspect includes reacting a halodecane compound in the presence of a nitrate-based compound. In the manufacture of polydecane compounds, a decyl radical cation and a decyl radical anion (Electronic Structure of Radical Anions and Cations of Polysilanes with Structural Defects Seki, Shu; Yoshida, Yoichi; Tagawa, Seiichi; Asai, are usually produced. Keisuke, Macromolecules, 1999, 32 (4), pp1080 - 1086). The decyl radical anion can be supplied to the production of the polydecane compound by anionic polymerization, and on the other hand, there is water in the air (H).2 O) or oxygen (O2 A case where a side reaction such as a siloxane chain (Si-O) or a stanol group (Si-OH) is selectively formed by a reaction with a decyl radical cation. The present inventors have found that when a film is formed using a composition containing a polydecane compound containing a side reaction such as a decane bond or a stanol group, the above-mentioned siloxane chain, stanol group or the like causes micro crack. Further, it is considered that the decyl radical cation is more likely to cause detachment of a substituent such as an aryl group or an alkyl group (particularly an aryl group) than the fluorenyl radical anion, thereby causing outgassing. On the other hand, in the method for producing a polydecane compound which is presumed to be the first aspect, the cerium-based compound can charge the decyl radical cation to reduce the decyl radical cation, thereby selectively promoting decane. Anionic polymerization of radical anions. It is presumed that the formation of side reactions such as a heptane bond or a stanol group which causes microcracking can be suppressed, and the generation of outgas can also be suppressed. (Nitrate-based compound) The above-mentioned nitrate-based compound is not particularly limited as long as it can be stably present as a nitroxide radical, and preferably contains a structure represented by the following formula (A). Compound. [Chemical 2](in formula (A), RA1 , RA2 , RA3 And RA4 Each is independently a hydrogen atom or an organic group. RA1 With RA2 They can be bonded to each other to form a ring. Also, RA3 With RA4 Can be bonded to each other to form a ring). In formula (A), as RA1 ~RA4 The organic group represented may be an organic group having 1 to 10 carbon atoms, RA1 , RA2 , RA3 And RA4 Preferred are each an alkyl group or an alkyl group substituted with a hetero atom. As the alkyl group, a methyl group, an ethyl group, a n-propyl group and an isopropyl group are preferred. Preferable examples of the hetero atom include a halogen atom, an oxygen atom, a sulfur atom, and a nitrogen atom. Preferred examples of the nitroxide-based compound are, for example, di-t-butyl oxynitride, di-1,1-dimethylpropyl oxynitride, and di-1,2-dimethylpropane. a base oxynitride, a di-2,2-dimethylpropyl oxynitride, and a compound represented by the following formula (A1), (A2), or (A3), more preferably the following formula (A1) A compound represented by (A2) or (A3). [Chemical 3]In the formulas (A1), (A2), and (A3), RA5 Represents a hydrogen atom, an alkyl group having 1 to 12 carbon atoms, a hydroxyl group, an amine group, a carboxyl group, a cyano group, an alkyl group substituted with a hetero atom, or an ether bond, an ester bond, a guanamine bond or a urethane bond And the bonded monovalent organic group. RA6 Indicates a divalent or trivalent organic group. N1 and n2 are integers satisfying 1≦n1+n2≦2. N3 and n4 are integers satisfying 1≦n3+n4≦2. N5 and n6 are integers satisfying 1≦n5+n6≦2. N7 is 2 or 3. Preferred examples of the compound represented by the formula (A1) include the following compounds. In the following formula, RA7 Each of them may independently represent an alkyl group having 1 to 20 carbon atoms which may have a substituent, an aromatic group which may have a substituent, or an alicyclic group which may have a substituent. [Chemical 4]Preferred examples of the compound represented by the formula (A2) include the following compounds. [Chemical 5]Preferred examples of the compound represented by the formula (A3) include the following compounds. [Chemical 6]Further preferred as the nitroxide-based compound, 2,2,6,6-tetramethylpiperidine 1-hydrocarbyloxy radical (TEMPO), 4-hydroxy-2,2,6,6-tetramethyl Isopiperidin-1-hydrocarbyloxy radical, 4-amino-2,2,6,6-tetramethylpiperidine 1-hydrocarbyloxy radical, 4-carboxy-2,2,6,6-tetra Methylpiperidine 1-hydrocarbyloxy radical, 4-cyano-2,2,6,6-tetramethylpiperidine 1-hydrocarbyloxy radical, 4-methacrylic acid-2,2,6, 6-tetramethylpiperidine 1-hydrocarbyloxy radical, 4-acrylic acid-2,2,6,6-tetramethylpiperidine 1-hydrocarbyloxy radical, 4-sided oxy-2,2, 6,6-tetramethylpiperidine 1-hydrocarbyloxy radical, 3-carboxy-2,2,5,5-tetramethylpyrrolidine 1-hydrocarbyloxy radical, 4-acetylamine-2, 2,6,6-tetramethylpiperidine 1-hydrocarbyloxy radical, 4-(2-chloroethylammonium)-2,2,6,6-tetramethylpiperidine 1-hydrocarbyloxy radical 4-hydroxy-2,2,6,6-tetramethylpiperidinebenzoic acid 1-hydroxyloxy ester free radical, 4-isothiocyanato-2,2,6,6-tetramethylpiperidine 1 Alkoxy radical, 4-(2-iodoethylamine)-2,2,6,6-tetramethylpiperidine 1-hydrocarbyloxy radical, and 4-methoxy-2,2, 6,6-Tetramethylpiperidine 1-hydrocarbyloxy radical. The nitroxide compound may be used singly or in combination of two or more. The amount of the above-mentioned nitrhydryl compound to be used is preferably in the range of 0.0001 to 10 mol times, more preferably in the range of 0.0005 to 5 mol, and further preferably in the range of 0.0008 to 1 mol per mol of the halodecane compound. It is particularly preferably in the range of 0.001 to 0.1 moles. (halodecane compound) The halodecane compound is preferably a compound represented by the following formula (1). Xn SiR4 - n (1) (wherein n is an integer of 2 to 4, and each of n X's are independently a halogen atom, and (4-n) R are each independently a hydrogen atom, an organic group or a decyl group). The halogen atom represented by X may, for example, be a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, preferably a chlorine atom or a bromine atom, and more preferably a chlorine atom. The organic group represented by R may, for example, be an alkyl group having 1 to 10 carbon atoms such as an alkyl group such as a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group or a third butyl group (preferably a carbon atom). a number of 1 to 6 alkyl groups, especially an alkyl group having 1 to 4 carbon atoms, etc.), a cycloalkyl group (a cycloalkyl group having 5 to 8 carbon atoms such as a cyclohexyl group, especially a ring having 5 to 6 carbon atoms) Alkenyl group, alkenyl group [alkenyl group having 2 to 10 carbon atoms such as a vinyl group, a propenyl group or a butenyl group (preferably an alkenyl group having 2 to 6 carbon atoms, particularly an alkenyl group having 2 to 4 carbon atoms; a cycloalkenyl group having 5 to 10 carbon atoms such as a cycloalkenyl group such as a cycloalkenyl group or a 1-cyclohexenyl group (preferably a cycloalkenyl group having 5 to 8 carbon atoms, particularly carbon) a cycloalkenyl group having 5 to 7 or the like), an aryl group (an aryl group having 6 to 10 carbon atoms such as a phenyl group or a naphthyl group), an aralkyl group such as a benzyl group or a phenethyl group;6-10 aryl-C1-6 Alkyl group (C6-10 aryl-C1-4 An alkyl group or the like], an amine group, an N-substituted amine group (an N-mono or disubstituted amino group substituted by the above alkyl group, a cycloalkyl group, an aryl group, an arylalkyl group, a fluorenyl group or the like). The above alkyl group, cycloalkyl group, aryl group or aryl group constituting the aralkyl group or the like may have one or a plurality of substituents. Examples of such a substituent include the above-exemplified alkyl groups (especially, an alkyl group having 1 to 6 carbon atoms). Examples of the organic group having such a substituent include a tolyl (methylphenyl) group, a xylyl (dimethylphenyl) group, an ethylphenyl group, and a methylnaphthyl group.1-6 alkyl-C6-10 Aryl (preferably single, two or three C1-4 alkyl-C6-10 Aryl, especially single or two C1-4 Alkylphenyl group, etc.). The decyl group may, for example, be a substituted fluorenyl group substituted with the above alkyl group, cycloalkyl group, alkenyl group, cycloalkenyl group, aryl group, aralkyl group or alkoxy group. When n is 2 (dihalodecane compound), R is preferably a hydrocarbon group such as an alkyl group or an aryl group. It is also possible that at least one R is an aryl group. In the case where the fluorenyl radical cation has an organic group (especially an aryl group) such as an alkyl group or an aryl group directly bonded to a ruthenium atom, detachment of the above organic group is liable to occur, thereby causing outgassing. On the other hand, in the production method of the polydecane compound estimated in the first aspect, even when the decyl radical cation has an organic group directly bonded to a ruthenium atom (R is an organic group (especially an aryl group) In this case, the nitroxide-based compound also causes charge-rotation of the decyl radical cation and decreases the decyl radical cation, whereby the detachment of the organic group is less likely to occur, and the generation of outgas can be suppressed. Examples of the representative dihalodecane compound include dialkyl dihalodecane (dimethyl dichlorodecane, etc.1-10 Alkyl dihalodecane, preferably two C1-6 Alkyl dihalodecane, and more preferably two C1-4 Alkyl dihalothane, etc., monoalkyl monoaryl dihalodecane (methylphenyl dichlorodecane, etc. single C1-10 Alkyl single C6-12 Aryl dihalodecane, preferably single C1-6 Alkyl single C6-10 Aryl dihalothane, and more preferably single C1-4 Alkyl single C6-8 Eryl dihalothane, etc., diaryl dihalodecane (diphenyldichlorodecane, etc.6-12 Aryl dihalodecane, preferably two C6-10 Aryl dihalodecane, and more preferably two C6-8 Aryl dihalothane, etc.). As the dihalodecane compound, a dialkyl dihalodecane or a monoalkyl monoaryl dihalodecane is preferred. The dihalodecane compound may be used singly or in combination of two or more. When n is 3 (trihalodecane compound), R is preferably an alkyl group, a cycloalkyl group, a aryl group which may have a substituent, a hydrocarbon group such as an aralkyl group, and more preferably an alkyl group or an aryl group. More preferably, it is an aryl group. As described above, in the method for producing a polydecane compound according to the first aspect, even when the decyl radical cation has an organic group directly bonded to a ruthenium atom (R is an organic group (especially an aryl group) In the case of the above, the action of the above-mentioned nitrate-based compound also makes it difficult to cause the detachment of the organic group to suppress the generation of outgas. The representative trihalodecane compound may, for example, be an alkyl trihalodecane (methyl trichlorodecane, butyl trichlorodecane, tert-butyl trichlorodecane or hexyltrichlorodecane).1-10 Alkyl trihalodecane, preferably C1-6 Alkyl trihalodecane, and more preferably C1-4 Alkyl trihalodecane, etc., cycloalkyl trihalodecane (cyclohexyl trihalodecane, etc. single C6-10 Cycloalkyltrihalothane, etc., aryltrihalothane (phenyl trichlorodecane, tolyltrichlorodecane, xylyltrichlorodecane, etc. C6-12 Aryl trihalodecane, preferably C6-10 Aryl trihalodecane, and more preferably C6-8 Aryl trihalodecane, etc.). The trihalodecane compound is preferably an alkyl trihalodecane or an aryl trihalodecane. The trihalodecane compound may be used singly or in combination of two or more. Specific examples of the case where n is 4 (tetrahalodecane compound) include tetrachlorosilane, dibromodichlorosilane, tetrabromodecane, and the like. The tetrahalodecane compound can be used singly or in combination of two or more kinds. Further, the tetrahalodecane compound can be used in combination with a mono-, di- or trihalodecane compound. Further, the halodecane compound may be a monohalodecane compound. Examples of the representative monohalodecane include a trialkylmonohalodecane (trimethylchlorodecane, etc., three C).1-10 Alkyl monohalodecane, preferably three C1-6 Alkyl monohalodecane, and more preferably three C1-4 Alkyl monohalodecane, etc., dialkyl monoaryl monohalodecane (dimethylphenyl chlorodecane, etc.1-10 Alkyl single C6-12 Aryl monohalodecane, preferably two C1-6 Alkyl single C6-10 Aryl monohalodecane, and more preferably two C1-4 Alkyl single C6-8 Aromatic monohalodecane, etc., monoalkyldiarylmonohalothane (methyldiphenylchlorodecane, etc., single C1-10 Alkyl di C6-12 Aryl monohalodecane, preferably single C1-6 Alkyl di C6-10 Aryl monohalodecane, and more preferably single C1-4 Alkyl di C6-8 Aryl monohalodecane, etc., triarylmonohalodecane (triphenylchlorodecane, etc., three C6-12 Aryl monohalodecane, preferably three C6-10 Aryl monohalodecane, and more preferably triple C6-8 Aryl monohalodecane, etc.). The monohalodecane compound may be used singly or in combination of two or more. These halodecane compounds may be used singly or in combination of two or more. The halodecane compound preferably contains at least one selected from the group consisting of a dihalodecane compound and a trihalodecane compound. Further, in the case where the halodecane compound contains a trihalodecane compound and/or a tetrahalodecane compound, a network-like (mesh or branched) polydecane compound can be produced. In the case of obtaining a network-like polydecane compound, as a representative halodecane (or a combination thereof), (a) an alkyl trihalodecane (for example, an alkyl trihalodecane alone, methyl trihalodecane) may be mentioned. C2-10 Combination of alkyl trihalodecane, C2-10 An alkyl trihalodecane or the like, (b) an aryl trihalodecane (for example, an aryl trihalodecane alone), (c) an aryl trihalodecane and a dihalodecane (for example, a monoalkyl monoaryl dihalodecane, etc.) a combination of the like. In the halodecane compound, the ratio (usage ratio) of at least one selected from the group consisting of a dihalodecane compound and a trihalodecane compound may be 50 mol% or more (for example, 60 mol% or more) with respect to the halodecane compound. It is preferably 70 mol% or more (for example, 80 mol% or more), and more preferably 90 mol% or more (for example, 95 mol% or more). Further, in the case of obtaining a network-like polydecane, the ratio (usage ratio) of the trihalodecane compound may be 30 mol% or more (for example, 40 mol% or more) of the total halodecane compound, preferably. It is 50 mol% or more (for example, 60 mol% or more), more preferably 70 mol% or more (for example, 75 mol% or more), and especially 80 mol% or more. Further, in the case of combining a dihalodecane compound and a trihalodecane compound, the ratio may be a dihalodecane compound/trihalothane compound (mole ratio) = 99/1 to 1/99, preferably. It is 90/10 to 2/98 (for example, 85/15 to 2/98), and further preferably 80/20 to 3/97 (for example, 70/30 to 4/96), and particularly 60/40 to 5 /95 (for example, 50/50 to 7/93), usually 50/50 to 5/95 (for example, 45/55 to 7/93, preferably 40/60 to 10/90, and further preferably 30) /70~88/12). The halodecane compound is preferably as pure as possible. For example, the liquid halodecane compound is preferably dried by using a desiccant such as calcium hydride and distilled, and the solid halocin compound is preferably purified by a recrystallization method or the like. Further, the concentration (base concentration) of the halodecane compound in the raw material mixture (reaction liquid) may be, for example, about 0.05 to 20 mol/l, preferably about 0.1 to 15 mol/l, and more preferably 0.2 to 0.2. 5 mol / l or so. In the method for producing a polydecane compound of the first aspect, a method for producing a polydecane compound such as the following (a) to (c) which comprises reacting a halodecane compound can be applied. (a) A method of dehalogenation and polycondensation of a halodecane compound using magnesium as a reducing agent ("magnesium reduction method", a method described in WO98/29476, JP-A-2003-277507, etc.) (b) A method for dehalogenation and polycondensation of a halodecane compound in the presence of an alkali metal such as sodium metal, lithium metal, potassium metal or the like (preferably sodium metal) ("Kipping Method", J. Am. Chem. Soc., 110, 124 (1988), Macromolecules, 23, 3423 (1990), etc.) (c) Method for dehalogenation polycondensation of halodecane compounds by electrode reduction (J. Chem. Soc., Chem. Commun., 1161 (1990), J. Chem. Soc., Chem. Commun. 897 (1992), etc.) The method for producing the polydecane compound of the first aspect is preferably magnesium which reacts the above halodecane compound in the presence of a nitroxide compound and magnesium. a reduction method or a Kipping method for reacting the above halodecane compound in the presence of an alkali metal such as sodium metal, lithium metal, potassium metal or the like (preferably sodium metal), more preferably a nitroxide compound A magnesium reduction method in which the above halodecane compound is reacted in the presence of magnesium. The magnesium may be in the form of a metal magnesium (magnesium element) or a magnesium alloy, or may be a mixture of the above (hereinafter also referred to as "magnesium component"). The type of the magnesium alloy is not particularly limited, and a conventional magnesium alloy such as a magnesium alloy containing aluminum, zinc, or a rare earth element (such as lanthanum, cerium, or the like) may be exemplified. The shape of the magnesium component is not particularly limited as long as it does not impair the reaction of the halodecane compound, and examples thereof include powdery particles (powder, granules, etc.), strips, diced sheets, lumps, and rods. The shape, the plate-like body (flat plate shape, etc.), etc. are especially preferable as a powder, a granular body, a strip shape, a cut sheet shape, etc.. The average particle diameter of magnesium (e.g., powdered magnesium) may be, for example, 1 to 10000 μm, preferably 10 to 7000 μm, and more preferably 15 to 5000 μm (e.g., 20 to 3000 μm). The magnesium component and the alkali metal may be used singly or in combination of two or more. The amount of the magnesium component or the alkali metal to be used is preferably from 1 to 20 equivalents, more preferably from 1.1 to 14 equivalents, still more preferably from 1.2 to 10 equivalents, more preferably from 1.2 to 10 equivalents, per mole of the halogen atom of the halodecane compound. Preferably 1.2 to 5 equivalents. Further, the amount of the magnesium component or the alkali metal used is preferably from 1 to 20 times, more preferably from 1.1 to 14 times, still more preferably from 1.2 to 10, based on the number of moles of the halodecane compound and the amount of magnesium or alkali metal. Times, especially preferably 1.2 to 5 times. The method for producing a polydecane compound according to the first aspect may be carried out in the presence of a nitronium compound, a magnesium component or an alkali metal, and further an organometallic complex represented by the following formula (Z1). The decane compound is reacted. Mp Lp/q (Z1) (in the above formula (Z1), Mp The p-valent metal cation is represented, L represents a q-valent organic ligand, and p and q each independently represent an integer of 1 or more). As a p-valent metal cation Mp The metal atom may be selected from the group consisting of iron, silver, aluminum, lanthanum, cerium, cobalt, copper, lanthanum, cerium, lanthanum, gallium, lanthanum, cerium, lanthanum, indium, cerium, lanthanum, cerium, manganese, molybdenum and lanthanum. , nickel, ruthenium, palladium, rhodium, iridium, platinum, rhodium, iridium, osmium, iridium, osmium, tin, antimony, titanium, antimony, vanadium, chromium, antimony, bismuth, gold, mercury, tungsten, antimony, zinc and zirconium The metal in the group formed. The p is preferably an integer of from 1 to 4, more preferably an integer of from 1 to 3, still more preferably 2 or 3. The q is preferably an integer of from 1 to 4, more preferably an integer of from 1 to 3, still more preferably 1 or 2. Examples of the q-valent organic ligand L include a β-diketone ligand, an olefin, a conjugated ketone, a nitrile, an amine, a carboxyl group ligand, carbon monoxide, a phosphine, a phosphinite, and a phosphine. An organic ligand such as a phosphonite or a phosphite. The q-valent organic ligand L may also be a chelating ligand. The organometallic complex is preferably an organometallic complex represented by the following formula (Z2). [Chemistry 7](In the above formula (Z2), M represents a group selected from the group consisting of iron, silver, aluminum, lanthanum, cerium, cobalt, copper, lanthanum, cerium, lanthanum, gallium, lanthanum, cerium, lanthanum, indium, lanthanum, cerium, lanthanum, manganese. , molybdenum, niobium, nickel, niobium, palladium, rhodium, iridium, platinum, rhodium, iridium, ruthenium, iridium, osmium, tin, antimony, titanium, antimony, vanadium, chromium, antimony, bismuth, gold, mercury, tungsten, antimony a metal in the group consisting of zinc and zirconium, RZ1 Respectively representing a saturated hydrocarbon group, an unsaturated hydrocarbon group, an aromatic hydrocarbon group, an aralkyl group, an alkoxy group, an aryloxy group, an aralkyloxy group or an aryloxyalkyl group, respectively, RZ2 It represents a hydrogen atom, a saturated hydrocarbon group, an unsaturated hydrocarbon group, an aromatic hydrocarbon group or the above aralkyl group. p represents an integer of 1 or more). As RZ1 And RZ2 The saturated hydrocarbon group represented by the formula includes methyl group, ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, second butyl group, tert-butyl group, pentyl group, hexyl group, heptyl group, and octyl group. Indenyl, fluorenyl, undecyl, dodecyl, tetradecyl, hexadecyl, octadecyl, eicosyl, behenyl, 2-dodecyl a linear or branched alkyl group having 1 to 40 carbon atoms such as an alkyl group, a triaconyl group, a dodecyl group or a tetradecyl group, and the halogen atom (a fluorine atom, a chlorine atom or a bromine atom) An alkyl group substituted with one or two or more substituents such as an iodine atom, an alkoxy group (hereinafter, etc.), or a decyl group (hereinafter, etc.), for example, a chloropropyl group, 3, 3 , 3-trifluoropropyl, 3,3,4,4,5,5,6,6,6-nonafluorohexyl, tridecafluoro-1,1,2,2-tetrahydrooctyl, heptafluoro -1,1,2,2-tetrahydroindenyl, 3-(heptafluoroisopropoxy)propyl, trimethyldecylmethyl, etc.; cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl a cyclic saturated hydrocarbon group having a monocyclic or polycyclic ring having 3 to 18 carbon atoms such as a bicycloheptyl group, a cyclooctyl group or an adamantyl group, and the cyclic saturated hydrocarbons One or two or more substituents such as an alkyl group (such as the above) and an aryl group (such as the above) may be substituted, for example, 4-tert-butylcyclohexyl or 4-phenylcyclohexyl; An alkyl group having the above cyclic saturated hydrocarbon group (such as the above), for example, a cyclohexylmethyl group, an adamantylethyl group or the like. As RZ1 And RZ2 The unsaturated hydrocarbon group represented by a vinyl group, an ethynyl group, an allyl group, a 1-propenyl group, a propargyl group, a butenyl group, a pentenyl group, a hexenyl group, an octenyl group, a nonenyl group, and a tenth a linear or branched alkenyl group having 2 to 18 carbon atoms such as a dialkylenyl group or a octadecyl group, and an alkynyl group, and a halogen atom (hereinafter, etc.), an alkoxy group (hereinafter, One or two or more substituents of a decyl group (hereinafter, etc.), an aryl group (hereinafter, etc., etc.), for example, 2-trifluoromethylvinyl group, 2-trifluoromethylethynyl, 3-methoxy-1-propenyl, 3-methoxy-1-propynyl, 2-trimethyldecylvinyl, 2-trimethyldecyl acetylene a cyclic, unsaturated hydrocarbon group having 3 to 18 carbon atoms such as a cyclopropenyl group, a cyclohexenyl group or a cyclooctenyl group; and the above cyclic unsaturated hydrocarbon group; An alkyl group (such as the above), for example, a cyclohexenylethyl group or the like. As RZ1 And RZ2 The aromatic hydrocarbon group to be represented by a phenyl group, a tolyl group, a butylphenyl group, a butoxyphenyl group, or the like, which is substituted with one or more of an alkyl group, an alkoxy group, and an amine group, etc. Substituting phenyl and the like. As RZ1 And RZ2 Examples of the aralkyl group represented include a benzyl group, a phenethyl group, a methylphenethyl group, a butylphenethyl group, a phenylpropyl group, and a methoxyphenylpropyl group. Examples of the heteroaralkyl group include a heteroaralkyl group. Pyridylmethyl, pyridylethyl and the like. As RZ1 The alkoxy group represented by the above may, for example, be an alkoxy group having 1 to 18 carbon atoms such as a methoxy group, an ethoxy group, a propoxy group, a butoxy group, a hexyloxy group or an octyloxy group. A substituted phenoxy group such as a phenoxy group, a tolyloxy group or a butylphenoxy group substituted with a substituent such as an alkyl group. As RZ1 Examples of the aralkyloxy group include a benzyloxy group and a phenethyloxy group. Examples of the aryloxyalkyl group include a phenoxypropyl group and a phenoxybutyl group. As RZ1 Preferably, it is a saturated hydrocarbon group having 1 to 30 carbon atoms, an aromatic hydrocarbon group or the like, and more preferably an alkyl group having 1 to 15 carbon atoms or a phenyl group, and more preferably a methyl group. As RZ2 Preferably, it is a hydrogen atom, a saturated hydrocarbon group having 1 to 18 carbon atoms, an aromatic hydrocarbon group, etc., and more preferably a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, a phenyl group or a phenylethyl group. Especially preferred are hydrogen atoms. A preferred example of p is as shown above. As a metal complex, according to the above metals M and RZ1 And RZ2 A combination of various metal complexes can be mentioned. Specific examples are exemplified by silver acetonate (I), tris(acetonitrile)aluminum (III), and tris(2,2,6,6-tetramethyl-3,5-heptanedione). Aluminum (III), tris(2,2,6,6-tetramethyl-3,5-heptanedione) ruthenium (III), tris(acetonitrile) ruthenium (III), bis(acetonitrile)cobalt (II), tris(acetonitrile)cobalt (III), tris(1,3-diphenyl-1,3-propanedione)cobalt (III), tris(3-methyl-2,4-pentyl) Diketone)cobalt(III), tris(3-phenyl-2,4-pentanedione)cobalt(III), tris(3-(1-phenylethyl)-2,4-pentanedione)cobalt (III), bis(benzaldehyde acetonide) cobalt (II) bis(hexafluoroacetamidine)cobalt (II), tris(2,2,6,6-tetramethyl-3,5-heptanedione) Cobalt (III), bis(acetonitrile) copper (II), bis(2,2,6,6-tetramethyl-3,5-heptanedion) copper (II), three (2, 2, 4) ,6,6-pentamethyl-3,5-heptanedione)cobalt(III), tris(2,2,6,6-tetramethyl-4-(1-phenylethyl)-3,5 -heptanedione)cobalt(III), tris(2,2,6,6-tetramethyl-4-phenyl-3,5-heptanedione)cobalt(III), bis(hexafluoroacetamidine) Copper (II), bis(trifluoroacetamidine) copper (II), tris(acetonitrile) ruthenium (III), tris(acetonitrile) ruthenium (III), three (2, 2, 6, 6 -tetramethyl-3,5-heptanedione) ruthenium (III), tris(acetonitrile) ruthenium (III), bis(acetonitrile) iron (I I), tris(acetonitrile)iron (III), tris(1,3-diphenyl-1,3-propanedione)iron (III), tris(3-methyl-2,4-pentane Ketone) iron (III), tris(3-phenyl-2,4-pentanedione) iron (III), tris(3-(1-phenylethyl)-2,4-pentanedione) iron ( III), tris(2,2,6,6-tetramethyl-3,5-heptanedione)iron (III), tris(2,2,4,6,6-pentamethyl-3,5- Heptanedione) iron (III), tris(2,2,6,6-tetramethyl-4-(1-phenylethyl)-3,5-heptanedion)iron (III), tris(2) , 2,6,6-tetramethyl-4-phenyl-3,5-heptanedione) iron (III), tetrakis(acetonitrile) ruthenium (IV), tris(acetonitrile) gallium (III) , tris(acetonitrile) ruthenium (III), tris(acetonitrile) ruthenium (III), tris(acetonitrile)indium (III), tris(acetonitrile) ruthenium (III), tris(acetonitrile) )镧(III), 三(乙醯酮)镏(III), bis(acetamidineacetone)manganese(II), tris(acetonitrile)manganese(III), bis(hexafluoroacetamidine)manganese (II) ), bis(acetamidine) two-sided molybdenum (IV), tris(acetonitrile) ruthenium (III), tris(2,2,6,6-tetramethyl-3,5-heptanedione)钕(III), bis(acetamidineacetone)nickel(II), bis(2,2,6,6-tetramethyl-3,5-heptanedone)nickel(II), bis(hexafluoroacetamidineacetone) Nickel (II), bis(1,3-diphenyl-1,3-propanedione) nickel (II), double (3-A) -2,4-pentanedione) nickel (II), bis(3-phenyl-2,4-pentanedione) nickel (II), bis(3-(1-phenylethyl)-2, 4-pentanedione) Nickel (II), bis(2,2,4,6,6-pentamethyl-3,5-heptanedione)nickel(II), bis(2,2,6,6- Tetramethyl-4-(1-phenylethyl)-3,5-heptanedione)nickel(II), bis(2,2,6,6-tetramethyl-4-phenyl-3,5 -heptanedione)nickel(II), bis(acetamidineacetone)palladium(II), bis(hexafluoroacetamidineacetone)palladium(II), bis(1,3-diphenyl-1,3-propane) Ketone) palladium (II), bis(3-methyl-2,4-pentanedione) palladium (II), bis(3-phenyl-2,4-pentanedione) palladium (II), double (3) -(1-phenylethyl)-2,4-pentanedione)palladium(II), bis(2,2,4,6,6-pentamethyl-3,5-heptanedione)palladium (II ), bis(2,2,6,6-tetramethyl-4-(1-phenylethyl)-3,5-heptanedione)palladium(II), bis(2,2,6,6- Tetramethyl-4-phenyl-3,5-heptanedione) palladium (II), tris(acetonitrile) ruthenium (III), tris(acetonitrile) ruthenium (III), tris(hexafluoroacetamidine) Acetone) ruthenium (III), bis(acetamidineacetone)platinum (II), tris(acetonitrile) ruthenium (III), tris(acetonitrile) ruthenium (III), tris(acetonitrile) ruthenium (III) , tris(hexafluoroacetamidine) ruthenium (III), tris(2,2,6,6-tetramethyl-3,5-heptanedione) ruthenium (III), tris(acetonitrile) ruthenium (III) ), three (2, 2, 6, 6-four -3,5-heptanedone) ruthenium (III), bis(acetonitrile) tin (II), tris(acetonitrile) ruthenium (III), tris(2,2,6,6-tetramethyl- 3,5-heptanedione) ruthenium (III), tris(2,2,6,6-tetramethyl-3,5-heptanedione) ruthenium (III), tris(acetonitrile) vanadium (III) , tris(acetonitrile) ruthenium (III), tris(hexafluoroacetamidineacetone) ruthenium (III), tris(2,2,6,6-tetramethyl-3,5-heptanedione) oxime (III) ), bis(acetonitrile)zinc (II), bis(hexafluoroacetamidine)zinc (II), bis(2,2,6,6-tetramethyl-3,5-heptanedone) zinc ( II), tetrakis(acetonitrile)zirconium (IV), tetrakis(2,2,6,6-tetramethyl-3,5-heptanedion) zirconium (IV), tetrakis(trifluoroacetamidine)zirconium (IV) and so on. These organic metal complexes may be used singly or in combination of two or more kinds. As the organometallic complex, a metal complex which is synthesized in advance can be used, and it can also be used as a manufacturer in the system. The amount of the above organometallic complex used is preferably in the range of 0.001 to 10 moles, more preferably in the range of 0.001 to 1 mole, and particularly preferably in the range of 0.001 to 0.1 moles, relative to the halodecane compound. . (Metal halide) The method for producing a polydecane compound according to the first aspect can also be carried out by reacting the above halodecane compound with a nitroxide compound, magnesium or an alkali metal, and a further metal halide. The metal halide may, for example, be a polyvalent metal halide such as a transition metal (for example, a group 3A element such as ruthenium, a group 4A element such as titanium or the like, a vanadium or the like, a group 5A element of the periodic table, iron, nickel, cobalt, palladium. Group 8 elements of the periodic table, elements such as Group 1B of the periodic table such as copper, elements of Group 2B of the periodic table such as zinc, etc.), metal halides such as metals of the Group 3B of the periodic table (aluminum, etc.), metals of the Group 4B of the periodic table (tin, etc.) Chloride, bromide or iodide, etc.). The valence of the above metal constituting the metal halide is not particularly limited, and is preferably 2 to 4, particularly 2 or 3. These metal halides may be used singly or in combination of two or more. The metal halide is preferably a chloride or a bromide of at least one metal selected from the group consisting of iron, aluminum, zinc, copper, tin, nickel, cobalt, vanadium, titanium, palladium, rhodium, and the like. As such a metal halide, for example, chloride (FeCl) can be exemplified2 FeCl3 Isoferric chloride; AlCl3 ZnCl2 , SnCl2 CoCl2 VCl2 TiCl4 PdCl2 , SmCl2 Et, bromide (FeBr)2 FeBr3 Ethyl bromide, etc., iodide (SmI2 and many more. Among the metal halides, preferred are chlorides (for example, ferric chloride (II), iron chloride (III), such as iron chloride, zinc chloride, etc.) and bromide. Ferric chloride and/or zinc chloride, especially zinc chloride, are usually used. The amount of the metal halide to be used is preferably in the range of 0.001 to 10 mol times, more preferably in the range of 0.001 to 1 mol, and particularly preferably in the range of 0.001 to 0.1 mol, based on the halodecane compound. Further, the concentration of the metal halide in the solvent (reaction liquid) is usually about 0.001 to 6 mol/L, preferably 0.005 to 4 mol/L, and more preferably about 0.01 to 3 mol/L. (Aprotic solvent) The reaction of the halodecane compound in the presence of the nitroxide compound in the method for producing a polydecane compound of the first aspect is preferably carried out in a solvent (reaction solvent), more preferably in the apron In a solvent. The aprotic solvent as a solvent (reaction solvent) includes, for example, an ether (1,4-dioxane, tetrahydrofuran, tetrahydropyran, diethyl ether, diisopropyl ether, 1,2-dimethoxyB). Cyclic or chain C such as alkane or bis(2-methoxyethyl)ether4-6 Ether), carbonates (such as propylene carbonate), nitriles (acetonitrile, benzonitrile, etc.), guanamines (dimethylformamide, dimethylacetamide, etc.), and fluorenes (II) Methyl hydrazine, etc., aromatic hydrocarbons (benzene, toluene, xylene, etc.), aliphatic hydrocarbons (such as chain or cyclic hydrocarbons such as hexane, cyclohexane, octane or cyclooctane) . These aprotic solvents may be used singly or in combination of two or more kinds in the form of a mixed solvent. Among these solvents, it is preferred to use at least a polar solvent [e.g., ethers [e.g., tetrahydrofuran, 1,2-dimethoxyethane, bis(2-methoxyethyl)ether, 1,4-dioxane). Etc. (especially tetrahydrofuran, 1,2-dimethoxyethane)]. The polar solvent may be used singly or in combination of two or more kinds, and a polar solvent may be combined with a non-polar solvent. In the method for producing a polydecane compound according to the first aspect, the liquid (reaction liquid) after the reaction may be further contacted with an aqueous solution containing at least one selected from the group consisting of a base and an acid. Purification, whereby the above polydecane compound is obtained. By performing the purification treatment by bringing the polydecane compound into contact with a base or an acid, inclusions such as halogen atoms (for example, halide ions (such as chloride ions) and Si-Cl remaining in the polydecane compound) can be removed, and The low molecular weight of the polydecane compound is promoted, and the solvent solubility of the above polydecane compound can be improved. Further, the acid also functions as a quencher for the reaction of the above halodecane compound. Further, by subjecting the polydecane compound to a metal halide to be subjected to a purification treatment, metal atoms (for example, Mg, Zn, or the like) remaining in the polydecane compound can be removed. The treatment temperature is preferably from -50 ° C to the boiling point of the solvent, and more preferably from room temperature to 100 ° C. Further, as the base to be used, various compounds can be used as long as they are basic, and for example, sodium hydroxide, potassium hydroxide, barium hydroxide, ammonia, tetramethylammonium hydroxide, sodium carbonate, or carbonic acid can be used. An inorganic base such as sodium hydrogencarbonate, potassium carbonate, lithium hydride, sodium hydride, potassium hydride or calcium hydride; alkyl metal such as methyl lithium, n-butyl lithium, methyl magnesium chloride or ethyl magnesium bromide; , Ga, Fe(Fe(II), Fe(III)), Cd, Co, Ni, Sn, Pb, Cu (Cu(II), Cu(I)), Ag, Pd, Pt, Au, etc. (or a metal halide; a metal alkoxide such as sodium methoxide, sodium ethoxide or potassium butoxide; triethylamine, diisopropylethylamine, N,N-dimethylaniline, pyridine, 4 An organic base such as dimethylaminopyridine or diazabicycloundecene (DBU). Various acids can be used as the acid to be used, and an inorganic acid such as hydrogen chloride can be used. Here, as the solvent to be used for the above-mentioned alkali or acid treatment, various types may be used. For example, one or more selected from the group consisting of hydrocarbon solvents such as benzene, toluene and xylene, propylene glycol monomethyl ether and propylene glycol monoethyl ether may be used. Ethylene glycol solvent, ether solvent such as diethyl ether, diisopropyl ether, dibutyl ether, tetrahydrofuran or 1,4-dioxane, acetone, methyl ethyl ketone, methyl isobutyl ketone, methyl pentyl A ketone solvent such as a ketone, a cyclopentanone or a cyclohexanone; an alcohol solvent such as ethanol, isopropyl alcohol or butanol. Further, the acetate compound containing a cyclic skeleton can also be preferably used as a solvent for the treatment under the above alkaline conditions. The acetate compound having a cyclic skeleton is not particularly limited as long as it is an acetate-based solvent having a cyclic skeleton which does not impair the effects of the present invention, and is preferably acetic acid represented by the following formula (S1). Cycloalkyl esters. [化8](in the formula (S1), RS1 Each is independently an alkyl group, p is an integer from 1 to 6, and q is an integer from 0 to (p+1). As RS1 The alkyl group represented by the alkyl group is an alkyl group having 1 to 3 carbon atoms, and examples thereof include a methyl group, an ethyl group, a n-propyl group and an isopropyl group. Specific examples of the cycloalkyl acetate represented by the formula (S1) include cyclopropyl acetate, cyclobutyl acetate, cyclopentyl acetate, cyclohexyl acetate, cycloheptyl acetate, and cyclooctyl acetate. Among these, from the viewpoint of availability, etc., cyclohexyl acetate is preferred. The reaction of the above halodecane compound can also be quenched by acid treatment. Various acids can be used as the acid to be used, and an inorganic acid such as hydrogen chloride can be used. According to the method for producing a polydecane compound of the first aspect, the polydecane compound can be obtained in a yield of 50% or more, preferably 70% or more. <Polydecane compound> According to the method for producing a polydecane compound according to the first aspect, as described above, formation of a side reaction product such as a decane bond or a stanol group can be suppressed, so that the ruthenium in the polyoxane compound can be reduced. The amount of oxygen chain bond (Si-O) present. According to the method for producing a polydecane compound according to the first aspect, the ratio of the following (2X) to the sum of the peak areas of the following (1X) and (2X), that is, the ratio represented by the following formula (3X) can be used. When the ratio is 0.4 or less, the peak areas of the above (1X) and (2X) are the maximum detection in the bond energy range of 99 eV or more and 104 eV or less as measured by X-ray photoelectron spectroscopy in the polydecane compound. The spectrum of the peak height is determined by peak separation, and the ratio is preferably 0.35 or less, more preferably 0.3 or less, still more preferably 0.2 or less, still more preferably 0.1 or less, and most preferably 0.05 or less. (1X)・・・ The area of the peak with the maximum peak height (2X) in the range of 99.0 eV or more and 99.5 eV or less in the key energy range is 100 eV or more and 104 eV or less. The area of the peak of the peak height (3X)・(2X)/[(1X)+(2X)] The intensity of the peak is measured, and the above (1X) and (2X) are performed in the respective bond energy ranges. The area of the peak obtained by peak separation is based on the area of the peak having the maximum peak height in the range of the bond energy of 100 eV or more and 104 eV or less, and the ratio of the content of Si-O and Si-C is known. Further, the content ratio of Si-Si is known from the area of the peak having the maximum peak height in the range of the bond energy of 99.0 eV or more and 99.5 eV or less (1X). It is considered that when the polydecane compound contains not only Si-C but also Si-O, in the range of 100 eV or more and 104 eV or less, two peaks having the largest peak height are overlapped after the peak separation, but the second state Preferably, the polydecane compound is in the range of 100 eV or more and 104 eV or less, and only one peak having the largest peak height appears after the peak separation, since it is preferable to have only one peak, it is substantially free Si-O bond. Further, in the case where the previous polydecane compound includes not only Si-C but also Si-O, in the range of 100 eV or more and 104 eV or less, two peaks having the largest peak height are overlapped after the peak separation, and thus, The area ratio becomes large, so the ratio expressed by the above formula exceeds 0.4. The polydecane compound of the second aspect is a polydecane compound produced by the production method of the first aspect described above. The polydecane compound of the second aspect produced by the production method of the first aspect is, for example, a polydecane compound having 3 to 40 Si atoms, preferably a polydecane compound having 5 to 30 Si atoms. The polydecane compound is preferably at least one selected from the group consisting of polydecane compounds represented by the following general formulae (T-1) and (T-2). (RT10 RT11 RT12 Si)T1 (RT13 RT14 Si)T2 (RT15 Si)T3 (Si)T4 (T-1) (in the above formula, RT10 , RT11 , RT12 , RT13 , RT14 And RT15 Each is independently a hydrogen atom, a hydroxyl group or an organic group. T1, t2, t3, and t4 are each independently a Mohr fraction, which is t1+t2+t3+t4=1, 0≦t1≦1, 0≦t2≦1, 0≦t3≦1, and 0≦t4≦1). [Chemistry 9](In the above formula (T-2), RT16 And RT17 Each independently represents a hydrogen atom, a hydroxyl group or an organic group. U represents an integer from 3 to 20) as RT10 ~RT17 The organic group represented by the above is the same as the specific examples and preferred examples described above as the organic group represented by R. As RT10 ~RT17 For the organic group to be represented, for example, any of the organic groups can be introduced by the method described in paragraph 0031 of JP-A-2003-261681. The mass average molecular weight (Mw) of the polydecane compound is not particularly limited as long as the object of the present invention is not impaired, and is preferably 500 to 10,000, more preferably 1,000 to 7,000, still more preferably 2,000 to 5,000. In the present specification, the mass average molecular weight (Mw) is a measured value obtained by polystyrene conversion by gel permeation chromatography (GPC). <Composition> The composition of the third aspect is a composition comprising the second aspect of the polydecane compound produced by the production method of the first aspect. Further, from the viewpoint of suppressing generation of outgassing and generation of microcracks, the composition of the third aspect preferably further contains the above-described nitroxide-based compound. The method of further including the above-described nitrate-based compound in the composition of the third aspect is not particularly limited as long as the effect of the present invention is not impaired, and the above-mentioned nitrate used in the production method of the first aspect can be used. The sulfhydryl compound may be obtained by remaining in the composition of the third aspect, or may be obtained by adding the above-described nitrhydryl compound to the composition containing the polydecane compound of the second aspect. These nitroxide compounds may be used singly or in combination of two or more. The content of the above-mentioned nitroxide-based compound in the composition of the third aspect is preferably 0.005% by mass or more, and more preferably 0.009% by mass or more, based on the total mass of the components other than the solvent of the composition of the third aspect. In addition, the content of the nitroxide-based compound in the composition of the third aspect is preferably 2% by mass or less, and more preferably 1% by mass, based on the total mass of the components other than the solvent of the composition of the third aspect. the following. Further, the composition of the third aspect may be a thermosetting composition or may not be a thermosetting composition. Further, the composition of the third aspect may be a radiation-sensitive composition, or may not be a radiation-sensitive composition, and may be a positive-type radiation-sensitive composition which is soluble in a developing solution by exposure, or may be borrowed. A negative-type radiation-sensitive composition that is insolubilized to a developer by exposure. Examples of the light source of the radiation include active energy rays such as ultraviolet rays and excimer laser light, and light sources such as a high pressure mercury lamp, an ultrahigh pressure mercury lamp, a xenon lamp, and a carbon arc lamp. (Solvent) The composition of the third aspect preferably contains a solvent. Examples of the solvent include the above-mentioned cyclic skeleton-containing acetate compound such as the cyclic alkyl acetate represented by the above formula (S1); alcohols such as methanol, ethanol, propanol and n-butanol; and ethylene glycol and Polyols such as ethylene glycol, propylene glycol, and dipropylene glycol; ketones such as acetone, methyl ethyl ketone, cyclohexanone, methyl n-amyl ketone, methyl isoamyl ketone, and 2-heptanone; γ-butyl An organic solvent containing a lactone ring such as a lactone; a compound having an ester bond such as ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate or dipropylene glycol monoacetate; a derivative of a polyol such as a monomethyl ether of a compound having an ester bond, a monoalkyl ether such as monoethyl ether, monopropyl ether or monobutyl ether; or a compound having an ether bond such as a monophenyl ether; Cyclohexane-like cyclic ethers, or methyl lactate, ethyl lactate, methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, ethoxy Esters such as ethyl propyl propionate; anisole, ethyl benzyl ether, cresyl methyl ether, diphenyl ether, dibenzyl ether, phenyl b An aromatic organic solvent such as ether, butylphenyl ether, ethylbenzene, diethylbenzene, pentylbenzene, cumene, toluene, xylene, isopropyl toluene or mesitylene; N, N, N',N'-tetramethylurea, N,N,2-trimethylpropionamide, N,N-dimethylacetamide, N,N-dimethylformamide, N,N- Nitrogen containing diethylacetamide, N,N-diethylformamide, 1,3-dimethyl-2-imidazolidinone, N-methylpyrrolidone, N-ethylpyrrolidone Organic solvent. Among them, preferred are the cycloalkyl acetate represented by the above formula (S1), propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), N, N, N', N'-four Base urea (TMU), and butanol, more preferably cyclopropyl acetate, cyclobutyl acetate, cyclopentyl acetate, cyclohexyl acetate, cycloheptyl acetate or cyclooctyl acetate, and more preferably cyclohexyl acetate ester. These solvents may be used in combination of two or more kinds. In the composition of the third aspect, the moisture content of the composition of the third aspect is preferably 1.0% by mass or less, more preferably 0.5% by mass or less, and further preferably 0.3% by mass. Below %, it is especially preferred that it is less than 0.3% by mass. Further, the amount of water in the solvent can be measured by a Karl Fischer method. The moisture of the composition of the third aspect is mostly derived from a solvent. Therefore, it is preferred to dehydrate the solvent in such a manner that the moisture content of the composition of the third aspect is the above amount. The amount of the solvent to be used is not particularly limited as long as it does not impair the object of the present invention. In the solvent-based composition, the concentration of the solid content of the composition of the third aspect is preferably from 1 to 50% by mass, more preferably from 10 to 40% by mass. (Other components) The composition of the third aspect may also contain a polydecane other than the polydecane compound of the second aspect. For example, in terms of improving chemical resistance, a polydecane compound having a high Mw (hereinafter also referred to as "high molecular weight polydecane"), and a Mw of a high molecular weight polydecane, for example, more than 5,000 and less than 100,000 are mentioned. Preferably, it is about 6,000 to 60,000. The composition of the third aspect may also contain an antimony resin other than the polydecane compound in terms of improving workability. Examples of the oxime-containing resin other than the polydecane compound include a polydecane oxide resin or a polydecane-polysiloxane resin having a polydecane structure (I-1) and a polyoxyalkylene structure (I-2). The Mw of the cerium-containing resin other than the polydecane compound is preferably 500 to 20,000, more preferably 1,000 to 10,000, still more preferably 2,000 to 8,000. Further, the polydecane-polydecane resin may be produced, for example, by treating the second aspect of the polydecane compound in a solvent under the above basic conditions, and then selecting from the following substances: At least one of the group consisting of hydrolytic condensation reaction: at least one selected from the group consisting of ruthenium compounds represented by the following general formulae (A-1-1) to (A-1-4) A compound, a hydrolyzate, a condensate, and a hydrolysis condensate of the above hydrazine compound. R1 R2 R3 SiX1 (A-1-1) R4 R5 SiX2 2 (A-1-2) R6 SiX3 3 (A-1-3) SiX4 4 (A-1-4) (in the above formula, X1 ~X4 Independently hydrolyzable, R1 , R2 , R3 , R4 , R5 And R6 Each of them is independently a hydrogen atom or an organic group, and a hydrogen atom in the organic group may be substituted by a halogen atom). As X1 ~X4 The hydrolyzable group represented by the above may, for example, be an alkoxy group, a halogen atom or an isocyanato group (NCO), and is preferably an alkoxy group. The alkoxy group may, for example, be an alkoxy group having 1 to 6 carbon atoms, and specific examples thereof include a methoxy group, an ethoxy group, a n-propoxy group, an isopropoxy group, a n-butoxy group, and a third group. Butoxy, pentyloxy, and the like. The halogen atom may, for example, be a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, and is preferably a chlorine atom. As R1 ~R6 The organic group represented by the carbon group is an organic group having 1 to 30 carbon atoms, and examples thereof include an alkyl group [methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, and tert-butyl group; An alkyl group of ~10 (preferably an alkyl group having 1 to 6 carbon atoms, particularly an alkyl group having 1 to 4 carbon atoms), a cycloalkyl group (a cycloalkyl group having 5 to 8 carbon atoms such as a cyclohexyl group) , especially a cycloalkyl group having 5 to 6 carbon atoms), an alkenyl group having 2 to 10 carbon atoms such as a vinyl group, a vinyl group, a propenyl group or a butenyl group (preferably an alkenyl group having 2 to 6 carbon atoms) a cycloalkenyl group having 5 to 10 carbon atoms such as a cycloalkenyl group such as a cycloalkenyl group or a 1-cyclohexenyl group (preferably a carbon number of 5 to 10 carbon atoms) a cycloalkenyl group of 5 to 8, particularly a cycloalkenyl group having 5 to 7 carbon atoms, etc.], an aryl group (an aryl group having 6 to 10 carbon atoms such as a phenyl group or a naphthyl group), and an aralkyl group [benzyl group] , phenethyl, etc.6-10 aryl-C1-6 Alkyl group (C6-10 aryl-C1-4 An alkyl group or the like], an amine group, an N-substituted amine group (an N-mono or disubstituted amino group substituted by the above alkyl group, a cycloalkyl group, an aryl group, an arylalkyl group, a fluorenyl group or the like). The above alkyl group, cycloalkyl group, aryl group or aryl group constituting the aralkyl group or the like may have one or a plurality of substituents. Examples of such a substituent include the above-exemplified alkyl groups (especially, an alkyl group having 1 to 6 carbon atoms), and the above-exemplified alkoxy groups. Examples of the organic group having such a substituent include a tolyl group, a xylyl group, an ethylphenyl group, and a methylnaphthyl group.1-6 alkyl-C6-10 Aryl (preferably single, two or three C1-4 alkyl-C6-10 Aryl, especially single or two C1-4 Alkylphenyl group, etc.; methoxyphenyl, ethoxyphenyl, methoxynaphthyl, etc.1-10 Alkoxy C6-10 Aryl (preferably C1-6 Alkoxy C6-10 Aryl, especially C1-4 Alkoxyphenyl group, etc.). Further, the hydrazine compound represented by the above formula (A-1-3) may be an anthracene compound represented by the following formula (A-3). HOOC-U-Z-Y-Si (ORa )3 (A-3) (In the above formula (A-3), U represents a divalent group formed by removing one hydrogen atom from each of two ring carbon atoms from an aromatic ring group or an alicyclic group, or An alkyl group which may have a branched chain and/or a double bond, Z represents -NHCO- or -CONH-, and Y represents a single bond, an alkylene group, an extended aryl group or a -RY1 -NH-RY2 -(where, RY1 And RY2 Respectively represent alkylene groups, Ra The hydrocarbon groups are each independently represented. Here, U and/or Y may have at least one selected from the group consisting of a (meth)acryl group, a vinyl group, and an epoxy group as a substituent). The aromatic ring in the above U may, for example, be an aromatic ring (for example, a benzene ring, a naphthalene ring, a tolyl group or a xylyl group) having 6 to 10 carbon atoms which may have a substituent of 1 to 2 carbon atoms. Examples of the alicyclic ring in the above-mentioned U include an alicyclic ring having 5 to 10 carbon atoms (for example, a monocyclic cycloalkyl group, a monocyclic cycloalkenyl group, a bicyclic alkyl group, a cage alkyl group, etc., specifically, , for example, a cyclopentane ring, a cyclohexane ring, a cycloheptane ring, a cyclooctane ring, a cyclodecane ring, a cyclodecane ring, a dicyclopentadiene ring, a norbornane ring, a norbornene ring, Cubic alkane ring, basket ring, etc.). Examples of the alkylene group which may have a branched chain and/or a double bond in the above U include an alkylene group having 1 to 4 carbon atoms, and examples thereof include a methylene group, an ethyl group, a stretching group, and a vinyl group. , (2-octenyl)-extended ethyl, (2,4,6-trimethyl-2-decenyl)-extended ethyl, etc., alkyl group having a double bond or having a carbon number of 1 to A branched alkyl group of 9 branches. Examples of the alkylene group in the above Y include an alkylene group having 1 to 6 carbon atoms, and examples thereof include a methylene group, an exoethyl group, a propyl group, and a butyl group. The above-mentioned aryl group in Y is preferably a carbon number of 6 to 10. Examples of such an aryl group include a stretched phenyl group (o-, m-, or equivalent), an anthranyl group (1,4-, 1,5-, 2,6-, etc.). As the above -R in YY1 -NH-RY2 -, specifically, for example, -CH2 -NH-CH2 -, - (CH2 )2 -NH-(CH2 )2 -, - (CH2 )3 -NH-(CH2 )3 -, -CH2 -NH-(CH2 )2 -, - (CH2 )2 -NH-CH2 -, - (CH2 )2 -NH-(CH2 )3 -, - (CH2 )3 -NH-(CH2 )2 -, -CH2 -NH-(CH2 )3 -, - (CH2 )3 -NH-CH2 -Wait. The polydecane oxide resin may be at least one selected from the group consisting of the following compounds selected from the group consisting of the above-described compounds (A-1-1) to (A-1-4); A hydrolyzate, a condensate, and a hydrolysis condensate of at least one hydrazine compound in the group. The resin other than the polydecane compound of the first aspect (hereinafter referred to as another Si resin) may be used singly or in combination of plural kinds. In the case where the other Si resin is contained, the mixing ratio (mass ratio) of the polydecane compound of the first aspect in the composition of the third aspect to the other Si resin may be appropriately changed depending on the use, for example, 1:99 to 99:1, preferably 10:90 to 90:10. The composition of the third aspect may also contain an organic compound having two or more hydroxyl groups or carboxyl groups in one molecule as a dissolution promoter for an alkaline aqueous solution or solution. Examples of such an organic compound include the compounds shown below. [化10][11][化12]Further, in the above structural formula, E is a hydrogen atom, a methyl group or a hydroxymethyl group, R15 Is a methylene group, a carbonyl group or a phenylene group, and n is an integer of 3 or more and less than 100. Na represents a natural number from 1 to 3, nb represents a natural number of 1 or more, nc represents a natural number of 2 to 4, and nd represents a natural number of 2 or more. An enantiomer or a diastereomer may be present in the above structural formula, and each structural formula representatively represents all of the stereoisomers. These stereoisomers may be used singly or in the form of a mixture. These organic compounds may be used alone or in combination of two or more. The amount of the solid content component other than the solvent is preferably 0.001 to 50% by mass, and more preferably 0.01 to 30% by mass based on the total amount of the solid content component of the composition of the third aspect. When the organic resin compound is added to remove the resin composition film during processing in the manufacturing process or to impart lithographic properties to the resin composition, the film formed by using the above composition is disintegrated. It is easy to accelerate and peel off. In order to improve the stability, the composition of the third aspect may further contain an organic acid having a carbon number of 1 to 30 or a divalent or higher. Examples of the acid to be added at this time include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, caproic acid, heptanoic acid, caprylic acid, capric acid, capric acid, oleic acid, stearic acid, linoleic acid, and sub-Asia. Sesic acid, benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, salicylic acid, trifluoroacetic acid, monochloroacetic acid, dichloroacetic acid, trichloroacetic acid, oxalic acid, malonic acid, methyl propyl Diacid, ethylmalonic acid, propylmalonic acid, butylmalonic acid, dimethylmalonic acid, diethylmalonic acid, succinic acid, methyl succinic acid, glutaric acid, adipic acid , itaconic acid, maleic acid, fumaric acid, citraconic acid, citric acid, and the like. Among these, oxalic acid, maleic acid, formic acid, acetic acid, propionic acid, citric acid and the like are particularly preferred. Further, in order to maintain stability, two or more kinds of acids may be mixed and used. Preferably, the organic substance is blended so as to have a pH of 组合7, more preferably 0.3 ≦pH ≦6.5, more preferably 0.5 ≦pH ≦6, in terms of the pH of the composition. acid. Further, the composition of the third aspect may further contain, as a stabilizer, a cyclic ether as a substituent or a divalent or higher alcohol or an ether compound. Specific examples of the stabilizing agent to be used include the stabilizers described in paragraphs (0180) to (0184) of JP-A-2009-126940. The composition of the third aspect may also comprise water. By adding water, the lithography performance is improved. The content of water in the solvent component of the composition of the third aspect is preferably more than 0% by mass and less than 50% by mass, more preferably from 0.3 to 30% by mass, still more preferably from 0.5 to 20% by mass. The composition of the third aspect may also comprise a photoacid generator. Specific examples of the photoacid generator that can be used include the photoacid generators described in paragraphs (0160) to (0179) of JP-A-2009-126940. The composition of the third aspect may also contain a surfactant as needed. Specific examples of the surfactant which can be used include the surfactant described in paragraph (0185) of JP-A-2009-126940. The composition of the third aspect may also comprise a thermal crosslinking accelerator. Specific examples of the heat crosslinking accelerator which can be used include the thermal crosslinking accelerator described in JP-A-2007-302873. Examples of the thermal crosslinking accelerator include a phosphate compound or a borate compound. Examples of such a phosphate compound include ammonium salts such as ammonium phosphate, tetramethylammonium phosphate, and tetrabutylammonium phosphate; and phosphonium salts such as triphenylsulfonium phosphate. Further, examples of such a borate compound include ammonium salts such as ammonium borate, tetramethylammonium borate, and tetrabutylammonium borate; and phosphonium salts such as triphenylphosphonium borate. In addition, the above-mentioned thermal crosslinking accelerator may be used alone or in combination of two or more. Further, the amount of the thermal crosslinking accelerator added is preferably from 0.01 to 50% by mass, more preferably from 0.1 to 40% by mass, based on the total amount of the solid content component other than the solvent. The composition of the third aspect may also contain various other hardeners. Examples of the curing agent include: Bronsted acid; imidazoles; organic amines; organophosphorus compounds and complexes thereof; organic amine complexes of Lewis acids; terpenes; alkali components produced by light or heat Hardener and the like. (Use) The composition of the third aspect can be used for forming a protective film or an interlayer film for protecting various substrates including a film containing a metal oxide and a film containing various metals. Examples of the various substrates include a substrate of a display material such as a semiconductor substrate, a liquid crystal display, an organic light emitting display (OLED), an electrophoretic display (electronic paper), a touch panel, a color filter, and a backlight (including a metal oxide). Substrate (including a film of various metals), a substrate of a solar cell (including a film containing a metal oxide, a film containing various metals), a substrate of a photoelectric conversion element such as a photosensor (including a film containing a metal oxide, including A film of various metals), a substrate of a photovoltaic element (including a film containing a metal oxide, a film containing various metals). <Cured material and substrate having the cured product> The cured product of the fourth aspect is a cured product of the composition of the third aspect. The substrate of the fifth aspect is a substrate having a cured material of the fourth aspect. The method of forming the cured product of the fourth aspect is not particularly limited as long as the effect of the present invention is not impaired, and a method of using a roll coater, a reverse coater, or a bar coat as needed is exemplified. A non-contact type coating device such as a contact transfer type coating device, a rotator (rotary coating device), or a curtain coater is applied to any substrate. The substrate is not particularly limited, and examples thereof include a glass substrate, a quartz substrate, and a transparent or translucent resin substrate (for example, polycarbonate, polyethylene terephthalate, polyether oxime, polyimine, poly A heat resistant material such as amidoxime or the like, a metal, a ruthenium substrate or the like. It can also be a substrate of a display material such as a semiconductor substrate, a liquid crystal display, an organic light emitting display (OLED), an electrophoretic display (electronic paper), a touch panel, a color filter, a backlight device, etc. (including a metal oxide-containing film, including various a metal film), a substrate of a solar cell (including a film containing a metal oxide, a film containing various metals), a substrate of a photoelectric conversion element such as a photo sensor (including a film containing a metal oxide, a film containing various metals) Various substrates such as a substrate of a photovoltaic element (including a film containing a metal oxide or a film containing various metals). The thickness of the substrate is not particularly limited, and can be appropriately selected depending on the use form of the pattern forming body. The coated film after the application is preferably dried (prebaked). The drying method is not particularly limited, and examples thereof include (1) drying at a temperature of 80 to 120 ° C, preferably 90 to 100 ° C for 60 to 120 seconds by using a hot plate; and (2) placing the number at room temperature. Method of hours to several days; (3) Method of removing the solvent by putting it into a hot air heater or an infrared heater for several tens of minutes to several hours. The dried coating film may be exposed to an active energy ray such as ultraviolet light or excimer laser light, or may be exposed. The amount of energy radiation to be irradiated is not particularly limited, and examples thereof include 30 to 2000 mJ/cm.2 about. The exposure step may also be carried out in place of or in addition to the calcination step described below. Further, in the exposure step, for example, the formed coating film may be selectively exposed, and in the case of the selective exposure step, a development step may be included. Further, for example, the formed coating film may be subjected to imprint lithography. In the case of performing imprint lithography, for example, a method comprising the steps of: applying a composition of the third aspect onto a substrate to form a coating film; and pressing the coating film to form a specific pattern a step of the mold of the relief structure; and a step of performing the exposure. The step of performing the exposure is performed on the coating film containing the composition of the third aspect in a state where the mold is pressed to the coating film. After hardening by exposure, the mold is peeled off, whereby a cured product of the fourth aspect patterned according to the shape of the mold can be obtained. In terms of improving the physical properties of the film, the coating film after the drying, after the exposure or after the development is preferably subjected to baking (post-baking). The calcination temperature is also dependent on the underlying substrate or the intended use, and is, for example, in the range of 200 to 1000 ° C, preferably 200 ° C to 500 ° C, more preferably 200 to 250 ° C. The baking atmosphere is not particularly limited, and may be an inert gas atmosphere such as a nitrogen atmosphere or an argon atmosphere, under vacuum, or under reduced pressure. It can also be in the atmosphere, and the oxygen concentration can be appropriately controlled. The baking time may be changed as appropriate, and is about 10 minutes to 120 minutes. The cured product of the fourth aspect is preferably a protective film for protecting the above various substrates (including a film containing a metal oxide and a film containing various metals). When the cured product is a film, the thickness is preferably from 10 nm to 10,000 nm, more preferably from 50 to 5,000 nm, and still more preferably from 100 to 3,000 nm. <Anionic polymerization selection promoter in the production of polydecane compound> The anionic polymerization selection accelerator of the sixth aspect is in the production of a polydecane compound containing a nitroxide compound having a structure represented by the above formula (A). Anionic polymerization selection accelerator. The anionic polymerization selection promoter of the sixth aspect converts the decyl radical cation generated in the production of the polydecane compound into a decyl radical anion by charge spinning, thereby selectively promoting an anion of the decyl radical anion polymerization. Thereby, formation of a side reaction substance such as a decane bond or a stanol group which causes microcracking can be suppressed, and generation of outgas can also be suppressed. Specific examples and preferred examples of the cerium-based compound containing the structure represented by the above formula (A) are as described in the method for producing a polydecane compound of the first aspect. The anionic polymerization selectivity promoter of the sixth aspect is preferably used in an amount of 0.0001 to 10 mol times, more preferably 0.001 to 5 mol times, relative to the halodecane compound used in the production of the polydecane compound. Further, it is preferably in the range of 0.001 to 1 mol, and particularly preferably in the range of 0.001 to 0.1 mol. [Examples] Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited by the examples. [Example 1] Production of polydecane compound To a round flask equipped with a three-way stopcock and a volume of 1000 ml, 25 g of magnesium (particle size: 20 to 1000 μm) was added as a catalyst (three acetone). Iron (III) 2.1 g, 4-hydroxy-TEMPO (4-hydroxy-2,2,6,6-tetramethylpiperidine 1-hydrocarbyloxy radical) 0.61 mmol (0.10 g), at 50 After heating and depressurizing to 1 mmHg (= 133 kPa) at ° C, the inside of the reactor (flask) was dried, and then dry argon gas was introduced into the reactor, and tetrahydrofuran previously dried by sodium-benzophenone carbonyl radical was added ( 500 ml of THF) and stirred at 25 ° C for about 60 minutes. To the reaction mixture, 63.5 g (0.3 mol) of methylphenyldichloromethane previously purified by distillation was added to the reaction mixture, and the mixture was stirred at 25 ° C for about 24 hours. After completion of the reaction, 1000 ml of 1 N (=1 mol/L) hydrochloric acid was added to the reaction mixture, followed by extraction with 500 ml of toluene. The toluene layer was washed 10 times with 200 ml of pure water, and the toluene layer was dried over anhydrous magnesium sulfate, and then toluene was distilled off, whereby a methylphenyl decane polymer (mass average molecular weight: 2000) of 28.4 g (yield 63) was obtained. %). [Examples 2 to 4 and Comparative Examples 1 and 2] Production of a polydecane compound The type of the halodecane compound, the type of the organometallic complex or the metal halide, and the presence or absence of the nitroxide compound were changed as shown in Table 1 below. The production of the polydecane compounds of Examples 2 to 4 and Comparative Examples 1 and 2 was carried out in the same manner as in Example 1 except that the type of the polydecane compound produced was the same. Further, Example 5 was produced in accordance with the method described in JACS, 110, 124 (1998) and Macromolecules, 23, 3423 (1990), in addition to the addition of a nitrate-based compound. [Table 1] [Preparation Examples 1 to 4 and Comparative Preparation Examples 1 and 2] Preparation of the respective polydecane compounds obtained in the above Examples 1 to 4 and Comparative Examples 1 and 2 in such a manner that the solid content concentration was 30% by mass Each of the compositions of Preparation Examples 1 to 4 and Comparative Preparation Examples 1 and 2 was prepared by dissolving in a solvent of the type described in Table 2 and filtering using a filter made of a fluororesin having a pore diameter of 0.1 μm. [Formation of Coating Film] The obtained compositions of the respective Preparation Examples and Comparative Preparation Examples were applied onto a sample substrate by a spin coater to form a coating film having a film thickness of a film having a film thickness of 5.0 μm. After the coating film was prebaked at 100 ° C for 2 minutes, the coating film was baked at 350 ° C for 30 minutes using a vertical baking oven (TS8000MB, manufactured by Tokyo Ohka Kogyo Co., Ltd.) to obtain a film thickness of 5.0 μm. The film. For the formed film, the presence or absence of microcracking and whether or not outgassing was evaluated were evaluated in accordance with the following methods. <Evaluation of microcracks> The surface of the formed film was observed for 24 hours using an optical microscope (magnification: 100 times), and the presence or absence of microcracks was evaluated. The results are shown in Table 2. <Evaluation of Outgassing> Further, the degree of outgas generation was evaluated based on the temperature-out gas analysis method (TDS). It was confirmed that the film formed by using the compositions of Comparative Preparation Examples 1 and 2 produced more outgassing than the composition of Preparation Examples 1 to 5 containing the polydecane compounds of Examples 1 to 5 membrane. [Table 2] The results shown in Table 2 show that the film formed by the compositions of Comparative Preparation Examples 1 and 2 using the polydecane compounds of Comparative Examples 1 and 2 produced without using the nitrate-based compound produced microcracks and release. gas. On the other hand, the film formed by the compositions of Preparation Examples 1 to 5 containing the polydecane compounds of Examples 1 to 5 produced using the nitrate-based compound showed no microcracking, and the generation of outgassing was also suppressed. .

Claims (12)

一種聚矽烷化合物之製造方法,其包括:於硝醯基化合物之存在下使鹵矽烷化合物進行反應。A method for producing a polydecane compound, which comprises reacting a halodecane compound in the presence of a nitrate-based compound. 如請求項1之製造方法,其中上述硝醯基化合物為包含下述通式(A)所表示之結構之化合物, [化1](式(A)中,Ra1 、Ra2 、Ra3 及Ra4 分別獨立地為氫原子或有機基;Ra1 與Ra2 可相互鍵結而形成環;又,Ra3 與Ra4 可相互鍵結而形成環)。The production method of claim 1, wherein the nitroxide compound is a compound comprising a structure represented by the following formula (A), [Chemical Formula 1] (In the formula (A), R a1 , R a2 , R a3 and R a4 are each independently a hydrogen atom or an organic group; R a1 and R a2 may be bonded to each other to form a ring; further, R a3 and R a4 may mutually Bonding to form a ring). 如請求項1或2之製造方法,其中進而於鹼金屬或鎂之存在下使上述鹵矽烷化合物進行反應。The production method according to claim 1 or 2, wherein the above halodecane compound is further reacted in the presence of an alkali metal or magnesium. 如請求項1或2之製造方法,其中上述鹵矽烷化合物為下述式(1)所表示之化合物, Xn SiR4 n (1) (式中,n為2~4之整數,n個X分別獨立地為鹵素原子,(4-n)個R分別獨立地為氫原子、有機基或矽烷基)。The production method according to claim 1 or 2, wherein the halodecane compound is a compound represented by the following formula (1), X n SiR 4 - n (1) (wherein n is an integer of 2 to 4, n X is independently a halogen atom, and (4-n) R are each independently a hydrogen atom, an organic group or a decyl group). 如請求項1或2之製造方法,其中進而於下述通式(B)所表示之有機金屬錯合物之存在下使上述鹵矽烷化合物進行反應, [化2](上述通式(B)中,M表示選自由鐵、銀、鋁、鉍、鈰、鈷、銅、鏑、鉺、銪、鎵、釓、鉿、鈥、銦、銥、鑭、鎦、錳、鉬、釹、鎳、鋨、鈀、鉕、鐠、鉑、錸、銠、釕、釤、鈧、錫、鋱、鈦、銩、釩、鉻、鉭、鐿、金、汞、鎢、釔、鋅及鋯所組成之群中之金屬,Rb1 分別獨立地表示飽和烴基、不飽和烴基、芳香族烴基、芳烷基、烷氧基、芳氧基、芳烷氧基或芳氧烷基,Rb2 表示氫原子、飽和烴基、不飽和烴基、芳香族烴基或芳烷基;p表示1以上之整數)。The production method according to claim 1 or 2, wherein the halodecane compound is further reacted in the presence of an organometallic complex represented by the following formula (B), [Chem. 2] (In the above formula (B), M represents a group selected from the group consisting of iron, silver, aluminum, lanthanum, cerium, cobalt, copper, lanthanum, cerium, lanthanum, gallium, lanthanum, cerium, lanthanum, indium, lanthanum, cerium, lanthanum, manganese. , molybdenum, niobium, nickel, niobium, palladium, rhodium, iridium, platinum, rhodium, iridium, ruthenium, iridium, osmium, tin, antimony, titanium, antimony, vanadium, chromium, antimony, bismuth, gold, mercury, tungsten, antimony a metal in the group consisting of zinc and zirconium, and R b1 independently represents a saturated hydrocarbon group, an unsaturated hydrocarbon group, an aromatic hydrocarbon group, an aralkyl group, an alkoxy group, an aryloxy group, an aralkyloxy group or an aryloxyalkyl group. R b2 represents a hydrogen atom, a saturated hydrocarbon group, an unsaturated hydrocarbon group, an aromatic hydrocarbon group or an aralkyl group; and p represents an integer of 1 or more). 一種包含聚矽烷化合物之組合物之製造方法,上述聚矽烷化合物係藉由如請求項1至5中任一項之方法所製造。A process for producing a composition comprising a polydecane compound, which is produced by the method of any one of claims 1 to 5. 如請求項6之方法,其中上述組合物進而包含硝醯基化合物。The method of claim 6, wherein the above composition further comprises a nitrate-based compound. 一種組合物之硬化物之製造方法,上述組合物係藉由如請求項6或7之方法所製造。A method of producing a cured product of the composition, which is produced by the method of claim 6 or 7. 一種具備硬化物之基板之製造方法,上述硬化物係藉由如請求項8之方法所製造。A method for producing a cured substrate, which is produced by the method of claim 8. 一種聚矽烷化合物之製造中之陰離子聚合選擇促進劑,其含有包含下述通式(A)所表示之結構之硝醯基化合物, [化3](式(A)中,Ra1 、Ra2 、Ra3 及Ra4 分別獨立地為氫原子或有機基;Ra1 與Ra2 可相互鍵結而形成環;又,Ra3 與Ra4 可相互鍵結而形成環)。An anionic polymerization selection accelerator in the production of a polydecane compound, which comprises a nitrate-based compound comprising a structure represented by the following formula (A), [Chem. 3] (In the formula (A), R a1 , R a2 , R a3 and R a4 are each independently a hydrogen atom or an organic group; R a1 and R a2 may be bonded to each other to form a ring; further, R a3 and R a4 may mutually Bonding to form a ring). 如請求項10之促進劑,其使製造聚矽烷化合物時所產生之矽烷基自由基陽離子進行電荷自旋。An accelerator according to claim 10 which causes charge spinning of a decyl radical cation produced in the production of a polydecane compound. 一種將包含下述通式(A)所表示之結構之硝醯基化合物用於選擇性促進聚矽烷化合物之製造中之陰離子聚合的應用, [化4](式(A)中,Ra1 、Ra2 、Ra3 及Ra4 分別獨立地為氫原子或有機基;Ra1 與Ra2 可相互鍵結而形成環;又,Ra3 與Ra4 可相互鍵結而形成環)。An application of an anthranyl compound containing a structure represented by the following formula (A) for selectively promoting anionic polymerization in the production of a polydecane compound, [Chemical 4] (In the formula (A), R a1 , R a2 , R a3 and R a4 are each independently a hydrogen atom or an organic group; R a1 and R a2 may be bonded to each other to form a ring; further, R a3 and R a4 may mutually Bonding to form a ring).
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