TW201030468A - Positive photosensitive composition and permanent resist - Google Patents

Positive photosensitive composition and permanent resist Download PDF

Info

Publication number
TW201030468A
TW201030468A TW98135477A TW98135477A TW201030468A TW 201030468 A TW201030468 A TW 201030468A TW 98135477 A TW98135477 A TW 98135477A TW 98135477 A TW98135477 A TW 98135477A TW 201030468 A TW201030468 A TW 201030468A
Authority
TW
Taiwan
Prior art keywords
group
compound
decane
photosensitive composition
positive photosensitive
Prior art date
Application number
TW98135477A
Other languages
Chinese (zh)
Other versions
TWI437369B (en
Inventor
Seiichi Saito
Hiroshi Morita
Hiromi Takenouchi
Atsushi Kobayashi
Jinichi Omi
Original Assignee
Adeka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Adeka Corp filed Critical Adeka Corp
Publication of TW201030468A publication Critical patent/TW201030468A/en
Application granted granted Critical
Publication of TWI437369B publication Critical patent/TWI437369B/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/14Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/16Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/14Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/18Polysiloxanes containing silicon bound to oxygen-containing groups to alkoxy or aryloxy groups
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers

Abstract

A positive photosensitive composition which comprises (A) a silicone resin bearing, in one molecule, at least two groups represented by general formula (1) [wherein R1 is a C1-10 alkylene group which may have a substituent hydrocarbon group; R2 is a C1-4 alkyl group; a is a number of 0 or 1 to 4; and b is a number of 1 to 3, with the proviso that the sum of a and b does not exceed 5], (B) a siloxane compound bearing a glycidyl group, (C) a diazonaphthoquinone, and (D) an organic solvent. The permanent resist is produced by applying the positive photosensitive composition to a substrate, exposing the coated substrate to light, and then subjecting the resulting coated substrate to alkali development and then to post-baking at 120 to 350 DEG C.

Description

201030468 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種使用聚矽氧院化合物之正型感光性組 合物,進而係關於一種使用該正型感光性組合物之永久抗 蝕劑及永久抗蝕劑之製造方法。 【先前技術】 由於資訊化社會之進展與多媒體系統之普及,液晶顯示 裝置、有機EL(Electro-Luminescence,電致發光)顯示裝置 等之重要性越來越大。於該等顯示裝置中,使用每個像素 具有薄臈電晶體(TFT,Thin Film Transistor)等之開關元件 的主動矩陣基板。 於主動矩陣基板上形成有多個掃描配線、及經由絕緣媒 而與該等掃描配線交又之信號配線^主動矩陣基板之掃描 配線、信號配線、絕緣膜等係藉由將利用濺鍍法、CvD (Chemical Vapor Deposition,化學氣相沈積)法、塗佈法等 所形成之導電膜或絕緣膜,利用光微影法反覆進行圖案化 而形成(例如參照專利文獻1及2)。 通常,於光微影法中使用光阻劑,亦正開發圖案化後亦 不剝離而用作絕緣膜或保護膜之抗蝕劑(永久抗蝕劑),但 於主動矩陣基板上使用永久抗蝕劑之情形時,不僅要求耐 化學品性(耐酸性、耐鹼性及耐溶劑性),而且要求高度之 耐熱性、及高熱歷程後之耐化學品性。 主動矩陣基板存在如下問題:於作為絕緣基板之玻璃基 板上形成以多晶矽薄膜作為活性層之TFT,利用絕緣膜覆 144043.doc 201030468 蓋多晶矽薄膜’但容易於多晶矽内部、或者結晶矽薄膜與 絕緣基板或絕緣膜之界面產生作為矽鍵之缺陷的懸鍵,電 晶體之特性降低。 為了消除懸鍵之問題,必需於氮化矽(SiNx)等之防止氫 之擴散的膜存在之狀態下,於300〜40〇t左右之溫度下進 行氫化處理(例如參照專利文獻3) ^所謂先前之永久抗蝕劑 之耐熱性’係指可耐受印刷配線板中之焊接的耐熱性,即 可於260〇C下耐受數分鐘之程度的耐熱性(例如參照專利文 獻4)’與主動矩陣基板所要求之耐熱性及高熱歷程後之耐 化學品性大為不同。 另一方面,矽氧樹脂之透明性、絕緣性、耐熱性、耐化 學品性等優異,亦已知以矽氧樹脂為主劑之光阻劑,但先 月’J之矽氧樹脂系光阻劑由於耐熱性及高熱歷程後之耐化學 品性不充分,故於主動矩陣基板上僅應用作表面之平坦化 膜(例如參照專利文獻5 )。 先前技術文獻 專利文獻 專利文獻1 :日本專利特開2004_281506號公報 專利文獻2 .日本專利特開2007-225860號公報 專利文獻3:曰本專利特開平6_77484號公報 專利文獻4.曰本專利特開2007-304543號公報 專利文獻5.日本專利特開2008-116785號公報 【發明内容】 發明所欲解決之問題 144043.doc 201030468 因此’本發明之目的在於提供—種正型感光性組合物以 及使用該正型感光性組合物之永久抗钱劑及其製造方法, 上述正型感光性組合物可提供一種透明性優異且亦可用作 ±動料基板之絕緣膜的具有高度之耐熱性、高熱歷程後 之耐化學品性的永久抗蝕劑。 解決問題之技術手段 本發明者等人進行銳意研究,結果完成本發明。 0 即’本發明提供一種正型感光性組合物其包含: 作為(A)成分的於1分子中具有至少2個以下述通式(1) [化1]201030468 6. Technical Field of the Invention The present invention relates to a positive photosensitive composition using a polyoxo compound, and further relates to a permanent resist using the positive photosensitive composition and A method of manufacturing a permanent resist. [Prior Art] Due to the progress of the information society and the popularity of multimedia systems, liquid crystal display devices and organic EL (Electro-Luminescence) display devices are becoming more and more important. In these display devices, an active matrix substrate having a switching element such as a thin film transistor (TFT) for each pixel is used. A plurality of scanning lines are formed on the active matrix substrate, and a signal wiring, a signal wiring, an insulating film, and the like of the active matrix substrate are connected to the scanning wiring via the insulating medium, and the sputtering method is used. A conductive film or an insulating film formed by a CvD (Chemical Vapor Deposition) method or a coating method is formed by patterning by photolithography (see, for example, Patent Documents 1 and 2). Usually, a photoresist is used in the photolithography method, and a resist (permanent resist) which is used as an insulating film or a protective film after patterning is also being developed, but permanent resist is used on the active matrix substrate. In the case of an etchant, chemical resistance (acid resistance, alkali resistance, and solvent resistance) is required, and high heat resistance and chemical resistance after a high heat history are required. The active matrix substrate has a problem in that a TFT having a polycrystalline germanium film as an active layer is formed on a glass substrate as an insulating substrate, and a polysilicon film is covered by an insulating film 144043.doc 201030468, but it is easy to be inside the polycrystalline silicon, or a crystalline germanium film and an insulating substrate. Or the interface of the insulating film generates a dangling bond as a defect of the 矽 bond, and the characteristics of the transistor are lowered. In order to eliminate the problem of the dangling bonds, it is necessary to carry out a hydrogenation treatment at a temperature of about 300 to 40 Torr in a state in which a film for preventing diffusion of hydrogen such as tantalum nitride (SiNx) is present (for example, see Patent Document 3). The heat resistance of the prior permanent resist refers to heat resistance which can withstand the soldering in the printed wiring board, and can withstand heat resistance at a temperature of 260 〇C for several minutes (for example, refer to Patent Document 4). The heat resistance required for the active matrix substrate and the chemical resistance after the high thermal history are greatly different. On the other hand, the epoxy resin is excellent in transparency, insulation, heat resistance, chemical resistance, etc., and a photoresist which is mainly composed of a ruthenium oxide resin is known. Since the chemical resistance of the agent after the heat resistance and the high heat history is insufficient, only the surface flattening film is applied to the active matrix substrate (see, for example, Patent Document 5). CITATION LIST Patent Literature Patent Literature 1: Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. 2007-225860. SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION 144043.doc 201030468 Therefore, the object of the present invention is to provide a positive photosensitive composition and use thereof. The permanent anti-money agent of the positive photosensitive composition and the method for producing the same, the positive photosensitive composition can provide a high heat resistance and high heat which is excellent in transparency and can also be used as an insulating film of a ±-moving substrate A chemical resistant permanent resist after the course. Means for Solving the Problems The inventors of the present invention conducted intensive studies and as a result completed the present invention. 0. The present invention provides a positive photosensitive composition comprising: as component (A) having at least two of the following formula (1) [Chemical Formula 1]

(式中’ R1表示可具有取代烴基之碳數之伸烷基,R2 表示碳數1〜4之烷基,a表示〇或1〜4之數,b表示^之數, φ 但a+b不超過5。) 所表示之基的矽氧樹脂; 作為(B)成分的具有縮水甘油基之石夕氧烧化合物; 作為(C)成分的重氮萘醌類;以及 •作為(D)成分的有機溶劑。 又’本發明提供一種永久抗姓劑,其特徵在於,其係由 上述正型感光性組合物所得。 又,本發明提供一種永久抗姓劑之製造方法,其特徵在 I44043.doc 201030468 於,將上述正型感光性組合物塗佈於基材上,使塗佈物曝 光’進行驗性顯影後’於12〇〜350°C之溫度下進行後烘烤 (post-bake) ° 又,本發明提供一種液晶顯示裝置,其包含將使用上述 正型感光性組合物所得之永久抗蝕劑作為絕緣層或平坦化 膜之主動矩陣基板。 又,本發明提供一種有機EL·顯示裝置,其包含將使用上 述正型感光性組合物所得之永久抗蝕劑作為絕緣層或平坦 化膜之主動矩陣基板。 發明之效果 本發明之效果在於提供一種正型感光性組合物、以及使 用該正型感光性組合物之永久抗蝕劑及其製造方法上述 正型感光性組合物可提供一種不僅透明性較高,而且可耐 受基板製作時之溫度的耐熱性、耐溶劑性、進而作為永久 抗姓劑之耐經時變化性優異的絕緣層。 【實施方式】 以下,根據較好之實施形態,對本發明進行詳細說明。 首先,對作為本發明之(A)成分之矽氧樹脂進行說明。 作為本發明之(A)成分之矽氧樹脂於1分子中具有至少2 個以上述通式(1)所表示之基。 於上述通式(1)中,Ri表示可具有取代烴基之碳數丨〜1〇 之伸烷基。作為碳數卜10之伸烷基,可列舉:亞甲基、伸 乙基、伸丙基、伸丁基、伸戊基、伸己基、伸庚基、伸辛 基、伸壬基及伸癸基,就耐熱性而言,較好的是碳數少, 144043.doc 201030468 就工業上獲得之容易程度而言’較好的是伸乙基、伸丙基 及伸丁基’進而較好的是伸乙基及伸丁基,最好的是伸乙 基。作為Ri中可具有之取代烴基,例如可列舉:甲基、乙 基、丙基、異丙基、丁基、異丁基、第三丁基苯基等, 就耐熱性而言,較好的是不具有取代烴基。 R2表示碳數1〜4之烷基,作為碳數丨〜4之烷基,可列舉: 甲基、乙基、丙基、異丙基、丁基、異丁基第二丁基、 第三丁基等。作為R2,就耐熱性而言,較好的是碳數丨〜3 之烷基,進而較好的是甲基及乙基,最好的是甲基。 a表示0*^4之數,b表示卜3之數,但a+b不超過5。於3 為2〜4之數時,R2可為相同之烷基,亦可為不同之烷基。 就耐熱性而言,a較好的是〇或丨之數,進而較好的是〇。就 工業上獲得之容易程度而言,1?較好的是丨或2之數,進而 較好的是1。 以上述通式(1)所表示之基之羧基的位置並無特別限 Ο 定,就耐熱性提高之方面而言,較好的是i個羧基相對於 R2而位於對位。 本發明之於1分子中具有至少2個以通式(1)所表示之基 的矽氧樹脂例如可藉由如下方法等而製造:使具有以通式 (1)所表示之基之烷氧基矽烷化合物(以下稱作化合物1AS) 或氯矽烷化合物(以下稱作化合物1CS)進行水解·縮合反 應’或者使含有具有與Si-H基之反應性之碳-碳雙鍵及芳 香族羧基的化合物(以下稱作化合物DAC)與於1分子中具有 至少2個Si-H基之化合物進行妙氫化反應。 144043.doc 201030468 首先’對使化合物1 AS或化合物1CS進行水解.縮合反應 之方法進行說明。 化合物1AS或化合物1CS之水解·縮合反應若進行所謂溶 膠-凝膠反應即可,具體可列舉於溶劑中使用酸或驗等觸 媒而進行水解·縮合反應的方法。 該情形時所使用之溶劑並無特別限定,具體可列舉. 水、曱醇、乙醇、正丙醇、異丙醇、正丁醇、異丁醇、丙 酮、曱基乙基酮、二噚烷、四氫呋喃等,可使用該等之^ 種’亦可混合使用2種以上。 烷氧基矽烷或氣矽烷之水解.縮合反應係藉由如下方式 進行:燒氧基矽烷或氣矽烷藉由水而水解,生成石夕醇基 (Si-OH基),該生成之矽醇基彼此、矽醇基與烷氧基矽烷 基、或矽醇基與氣矽烷基進行縮合。 於水解·縮合反應中,可使用烷氧基矽烷化合物與氣矽 烷化合物中之任一者,亦可混合使用各化合物由於容易 控制反應及除去副產物,故較好的是使用作為烷氧基矽烷 化合物之化合物1AS。 為了使該水解反應快速進行,較好的是添加適量之水, 亦可將觸媒溶解於水中而添加。又,藉由空氣中之水分、 或水以外之溶劑中亦含有之微量的水’亦可進行該水解反 應。 該水解.縮合反應中所使用之酸或驗等觸媒若為促進水 解.縮合反應者即可,具體可列舉:鹽酸、鱗酸、硫酸等 無機酸類’曱酸、乙酸、草酸、檸樣酸、甲續酸、苯項 144043.doc 201030468 酸、對甲苯續酸、鱗酸單異 ^ . 哥有機酸類,氫氧化鈉、 單L:、氫氧化鐘、氨等無機驗類,三甲胺、三乙胺、 =:、二乙醇胺等胺化合物(有機驗)類等;可使用該 寻之1種,亦可併用2種以上。 轉.縮合反叙溫度係根㈣劑之種類、觸媒之種類 及篁等而變化,較好的县〇 衩好的疋0〜80C,進而較好的是5〜5〇〇c, 最好的是8〜30°C。 於化合物1AS中,作為R!為伸乙基 位含有叛基之化合物,例如可列舉:(wherein R1 represents an alkylene group which may have a carbon number of a substituted hydrocarbon group, R2 represents an alkyl group having 1 to 4 carbon atoms, a represents a number of hydrazine or 1 to 4, b represents a number of ^, φ but a+b Not more than 5.) the base of the epoxy resin; the component (B) having a glycidyl group; the diazonaphthoquinone as the component (C); and • as the component (D) Organic solvent. Further, the present invention provides a permanent anti-surname agent which is obtained from the above-mentioned positive photosensitive composition. Further, the present invention provides a method for producing a permanent anti-surname agent, which is characterized in that, in the case of I44043.doc 201030468, the positive-type photosensitive composition is applied onto a substrate, and the coated article is exposed to 'after inspection and development'. Post-bake is carried out at a temperature of 12 Torr to 350 ° C. Further, the present invention provides a liquid crystal display device comprising a permanent resist obtained by using the above positive photosensitive composition as an insulating layer. Or planarizing the active matrix substrate of the film. Moreover, the present invention provides an organic EL display device comprising an active matrix substrate using a permanent resist obtained by using the positive photosensitive composition as an insulating layer or a planarizing film. Advantageous Effects of Invention The present invention provides an positive photosensitive composition, a permanent resist using the positive photosensitive composition, and a method for producing the same. The positive photosensitive composition can provide a high transparency Moreover, it can withstand the heat resistance and solvent resistance of the temperature at the time of substrate production, and further, it is an insulating layer which is excellent in resistance to change over time as a permanent anti-surname agent. [Embodiment] Hereinafter, the present invention will be described in detail based on preferred embodiments. First, the epoxy resin which is the component (A) of the present invention will be described. The oxime resin which is the component (A) of the present invention has at least two groups represented by the above formula (1) in one molecule. In the above formula (1), Ri represents an alkylene group having a carbon number of 丨~1〇 which may have a substituted hydrocarbon group. Examples of the alkylene group of the carbon number are methylene, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, thiol and hydrazine Base, in terms of heat resistance, it is preferred that the carbon number is small, 144043.doc 201030468 In terms of the ease of industrial availability, 'better ethyl, propyl and butyl groups' are preferred. It is an ethyl group and a butyl group, and the most preferable one is an ethyl group. Examples of the substituted hydrocarbon group which may be contained in Ri may, for example, be a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group or a t-butylphenyl group, and are preferably in terms of heat resistance. It does not have a substituted hydrocarbon group. R2 represents an alkyl group having 1 to 4 carbon atoms, and examples of the alkyl group having a carbon number of 丨4 to 4 include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a second butyl group, and a third group. Butyl and the like. As R2, in terms of heat resistance, an alkyl group having a carbon number of 丨3 to 3 is preferable, and a methyl group and an ethyl group are more preferable, and a methyl group is most preferable. a represents the number of 0*^4, b represents the number of Bu 3, but a+b does not exceed 5. When 3 is a number of 2 to 4, R 2 may be the same alkyl group or a different alkyl group. In terms of heat resistance, a is preferably a number of ruthenium or osmium, and further preferably ruthenium. In terms of the ease of industrial acquisition, 1 is preferably 丨 or 2, and more preferably 1. The position of the carboxyl group of the group represented by the above formula (1) is not particularly limited, and in terms of improvement in heat resistance, it is preferred that i carboxyl groups are positioned opposite to R2. The oxime resin having at least two groups represented by the formula (1) in one molecule of the present invention can be produced, for example, by the following method or the like: an alkoxy group having a group represented by the formula (1) A hydrazine compound (hereinafter referred to as a compound 1AS) or a chlorosilane compound (hereinafter referred to as a compound 1CS) undergoes a hydrolysis/condensation reaction or a carbon-carbon double bond having an reactivity with a Si-H group and an aromatic carboxyl group. The compound (hereinafter referred to as compound DAC) undergoes a hydrogenation reaction with a compound having at least two Si-H groups in one molecule. 144043.doc 201030468 First, a method of subjecting Compound 1 AS or Compound 1CS to hydrolysis and condensation reaction will be described. In the hydrolysis/condensation reaction of the compound 1AS or the compound 1CS, a so-called sol-gel reaction may be carried out, and a method of performing a hydrolysis/condensation reaction using an acid or a catalyst such as a solvent in a solvent may be specifically mentioned. The solvent to be used in this case is not particularly limited, and specific examples thereof include water, decyl alcohol, ethanol, n-propanol, isopropanol, n-butanol, isobutanol, acetone, mercaptoethyl ketone, and dioxane. For example, tetrahydrofuran or the like can be used, and two or more kinds can be used in combination. Hydrolysis of alkoxy decane or gas oxime. The condensation reaction is carried out by hydrolyzing a oxydecane or a gas oxime by water to form a nicotinic alcohol group (Si-OH group), and the resulting sterol group Each of them, a sterol group and an alkoxyalkyl group, or a decyl group is condensed with a gas alkyl group. In the hydrolysis/condensation reaction, any one of an alkoxydecane compound and a gas oxane compound may be used, or each compound may be used in combination, since it is easy to control the reaction and remove by-products, it is preferably used as an alkoxydecane. Compound 1AS of the compound. In order to carry out the hydrolysis reaction rapidly, it is preferred to add an appropriate amount of water, or to add the catalyst in water. Further, the hydrolysis reaction can be carried out by water in the air or a trace amount of water contained in a solvent other than water. The hydrolysis or the catalyst used in the condensation reaction may be a hydrolysis reaction or a condensation reaction, and specific examples thereof include inorganic acids such as hydrochloric acid, scalylic acid, and sulfuric acid, such as citric acid, acetic acid, oxalic acid, and citric acid. , methyl acid, benzene 144043.doc 201030468 acid, p-toluene acid, squaric acid mono-^. Organic acid, sodium hydroxide, single L:, oxidation clock, ammonia and other inorganic tests, trimethylamine, three An amine compound (organic test) such as ethylamine, =:, diethanolamine or the like; one of the above-mentioned ones may be used, or two or more kinds may be used in combination. The condensation condensation reversal temperature is the type of the root (four) agent, the type of the catalyst, and the enthalpy, etc., and the better county is better than 0~80C, and then preferably 5~5〇〇c, preferably It is 8~30 °C. In the compound 1AS, R: is a compound having a tetyl group in the exoethyl group, and examples thereof include, for example,

、a=0、b=l、且於對 2-(4-羧基苯基)乙基 三甲氧基矽烷 氧基矽烷類; 2-(4-羧基苯基)乙基三乙氧基矽烷等三烷 2-(4-羧基苯基)乙基二甲氧基甲基矽烷、2_ (4-皴基苯基)乙基二乙氧基甲基石夕燒、2_(續基苯基)乙基 二甲氧基乙基矽烷、2-(4_羧基苯基)乙基二乙氧基乙基矽 烷、2-(4-羧基苯基)乙基二甲氧基丙基矽烷、2_(4_羧基苯 基)乙基二乙氧基丙基矽烷、2-(4-羧基苯基)乙基二甲氧基, a=0, b=l, and p-(2-carboxyphenyl)ethyltrimethoxydecaneoxydecane; 2-(4-carboxyphenyl)ethyltriethoxydecane, etc. Alkyl 2-(4-carboxyphenyl)ethyldimethoxymethylnonane, 2-(4-mercaptophenyl)ethyldiethoxymethyl sulphate, 2-(decylphenyl)ethyl Dimethoxyethyl decane, 2-(4-carboxyphenyl)ethyldiethoxyethyl decane, 2-(4-carboxyphenyl)ethyldimethoxypropyl decane, 2_(4_ Carboxyphenyl)ethyldiethoxypropyl decane, 2-(4-carboxyphenyl)ethyldimethoxy

丁基矽烷、2-(4-羧基苯基)乙基二乙氧基丁基矽烷、2_(4_ 羧基苯基)乙基二甲氧基異丁基矽烷、2(4•羧基苯基)乙基 二乙氧基異丁基矽烷、2-(4-羧基苯基)乙基二曱氧基環己 基矽烷、2-(4-羧基苯基)乙基二乙氧基環己基矽烷等二烷 氧基矽烷類;2-(4-羧基苯基)乙基曱氧基二曱基矽烷、2_ (4-羧基苯基)乙基乙氧基二曱基矽烷、2-(4-羧基苯基)乙基 曱氧基二乙基矽烷、2-(4-羧基苯基)乙基乙氧基二乙基矽 烷、2-(4-羧基苯基)乙基曱氧基二丙基矽烷、2-(4-羧基苯 基)乙基乙氧基二丙基矽烷、2-(4-羧基苯基)乙基甲氧基二 144043.doc 201030468 丁基石夕烷、2-(4-叛基苯基)乙基乙氧基二丁基石夕烷、2 (心 叛基苯基)乙基甲氧基二異丁基石夕烧、2_(4幾基苯基)乙基 乙氧基二異丁基矽烷、2-(4-羧基苯基)乙基曱氧基二環己 基矽烷、2-(4-羧基苯基)乙基乙氧基二環己基矽烷等單烷 氧基>6夕烧類。 於該等化合物中,就反應性良好且耐熱性亦變得良好的 方面而言,較好的是2-(4-羧基笨基)乙基三曱氧基矽烷、 2-(4-羧基苯基)乙基三乙氧基矽烷、2_(4羧基苯基)乙基二 曱氧基甲基矽烷' 2-(4-羧基苯基)乙基二乙氧基甲基矽 烷、2-(4-羧基苯基)乙基二甲氧基乙基矽烷、2_(4_羧基苯 基)乙基二乙氧基乙基矽烷、2-(4-羧基苯基)乙基三曱氧基 矽烷、2-(4-羧基苯基)乙基三乙氧基矽烷,進而較好的是 2-(4-羧基苯基)乙基三甲氧基矽烷、2_(4_羧基笨基)乙基二 甲氧基曱基矽烷、2-(4-羧基苯基)乙基二曱氧基乙基矽 烷,最好的是2-(4-羧基苯基)乙基三曱氧基矽烷、2 (4_羧 基笨基)乙基二甲氧基甲基石夕烧。化合物1AS可僅使用1 種,亦可併用2種以上。 於化合物1CS中’作為R1為伸乙基、a=〇、b=l、且於對 位含有羧基之化合物,例如可列舉:2-(4-羧基苯基)乙基 三氣矽烷等三氣矽烷類;2-(4·羧基苯基)乙基二氣甲基矽 烷、2-(4-羧基苯基)乙基二氣乙基矽烷、2_(4_羧基苯基)乙 基二氣丙基石夕垸、2-(4-缓基苯基)乙基二氣丁基石夕烧、2-(4-羧基苯基)乙基二氯異丁基矽烷、2-(4-羧基苯基)乙基二 氣環己基矽烷等二氣矽烷類;2-(4-羧基苯基)乙基氣二甲 144043.doc •10· 201030468 基矽烷、2-(4-羧基苯基)乙基氣二乙基矽烷、2_(4_羧基苯 基)乙基氣二丙基矽烷、2_(4_羧基苯基)乙基氯二丁基矽 烷、2-(4-鲮基苯基)乙基氣二異丁基矽烷、2_(4_羧基苯基) 乙基氣二環己基矽烷等單氣矽烷類。 於該等化合物中,就反應性良好且耐熱性亦變得良好的 方面而言’較好的是2-(4·羧基苯基)乙基三氣矽烷、2_(4_ 羧基笨基)乙基二氣甲基矽烷、2_(4_羧基苯基)乙基二氣乙 基矽烷,進而較好的是2-(4-羧基苯基)乙基三氣矽烷、2_ (4-羧基苯基)乙基二氣甲基矽烷。化合物1CS可僅使用1 種’亦可併用2種以上。 上述化合物1AS及化合物1CS之羧基亦可經第三丁基等 保護基所保護。例如化合物1AS及化合物lcs之以通式 所表示之基如下述通式(la) [化2]Butyl decane, 2-(4-carboxyphenyl)ethyldiethoxybutyl decane, 2-(4-carboxyphenyl)ethyldimethoxyisobutyl decane, 2(4•carboxyphenyl)B Dioxane such as diethoxybutyl isodecane, 2-(4-carboxyphenyl)ethyldimethoxycyclohexyldecane, 2-(4-carboxyphenyl)ethyldiethoxycyclohexyldecane Oxydecanes; 2-(4-carboxyphenyl)ethyloxydimethoxydecane, 2-(4-carboxyphenyl)ethylethoxydidecyldecane, 2-(4-carboxyphenyl Ethyl nonoxydiethyl decane, 2-(4-carboxyphenyl)ethyl ethoxydiethyl decane, 2-(4-carboxyphenyl)ethyl decyloxydipropyl decane, 2 -(4-carboxyphenyl)ethylethoxydipropylnonane, 2-(4-carboxyphenyl)ethylmethoxydi 144043.doc 201030468 butyl astaxane, 2-(4-reasterylbenzene Ethyl ethoxy dibutyl oxalate, 2 (heart-reactive phenyl) ethyl methoxy diisobutyl sulphate, 2 - (4 phenyl) ethyl ethoxy diisobutyl Decane, 2-(4-carboxyphenyl)ethyl decyloxydicyclohexyldecane, 2-(4-carboxyphenyl)ethylethoxydicyclohexyl Alkoxy and other monoalkoxy > 6 burning evening class. Among these compounds, 2-(4-carboxyphenyl)ethyltrimethoxy decane and 2-(4-carboxybenzene are preferred in terms of good reactivity and good heat resistance. Ethyltriethoxydecane, 2-(4-carboxyphenyl)ethyldimethoxyoxydecane' 2-(4-carboxyphenyl)ethyldiethoxymethyldecane, 2-(4 -carboxyphenyl)ethyldimethoxyethyl decane, 2-(4-carboxyphenyl)ethyldiethoxyethyl decane, 2-(4-carboxyphenyl)ethyltrimethoxy decane, 2-(4-carboxyphenyl)ethyltriethoxydecane, further preferably 2-(4-carboxyphenyl)ethyltrimethoxynonane, 2-(4-carboxyphenyl)ethyl dimethyl Oxydecyl decane, 2-(4-carboxyphenyl)ethyldimethoxyethyl decane, most preferably 2-(4-carboxyphenyl)ethyltrimethoxy decane, 2 (4_ Carboxyl) Ethyldimethoxymethyl. The compound 1AS may be used alone or in combination of two or more. In the compound 1CS, 'as a compound in which R1 is an ethyl group, a=〇, b=l, and a carboxyl group is contained in the para position, for example, three gases such as 2-(4-carboxyphenyl)ethyltrioxane may be mentioned. Hydranes; 2-(4.carboxyphenyl)ethyldioxamethylnonane, 2-(4-carboxyphenyl)ethyldiethyleneethyloxane, 2-(4-carboxyphenyl)ethyldipropane Basestone, 2-(4-carbophenyl)ethyldi-butylbutyl, 2-(4-carboxyphenyl)ethyldichloroisobutylnonane, 2-(4-carboxyphenyl) Dioxanes such as ethyl dicyclohexyldecane; 2-(4-carboxyphenyl)ethyl dimethyl 144043.doc •10· 201030468 decyl, 2-(4-carboxyphenyl)ethyl 2 Ethyl decane, 2-(4-carboxyphenyl)ethyl dipropylene decane, 2-(4-carboxyphenyl)ethyl chlorodibutyl decane, 2-(4-mercaptophenyl)ethyl hexane Monooxane such as isobutyl decane or 2-(4-carboxyphenyl)ethyl dicyclohexyldecane. Among these compounds, in terms of good reactivity and good heat resistance, '(2-carboxyphenyl)ethyltrioxane, 2-(4-carboxyl)ethyl) is preferred. Dioxomethyl decane, 2-(4-carboxyphenyl)ethyldiethyleneethyl decane, more preferably 2-(4-carboxyphenyl)ethyltrioxane, 2-(4-carboxyphenyl) Ethyl dioxomethyl decane. The compound 1CS may be used alone or in combination of two or more. The carboxyl group of the above compound 1AS and compound 1CS may also be protected by a protecting group such as a third butyl group. For example, the compound represented by the formula of the compound 1AS and the compound lcs is represented by the following formula (la) [Chemical 2]

(式中,R1、R2、a及b與上述通式(1)中之含義相同。) 所示般,羧基可經第三丁酯基所保護。 上述經保護之化合物可與未經保護之化合物同樣地進行 水解.縮合反應。於保護基為第三丁基之情形時,可於上 述水解.縮合反應之後’於溶劑中視需要使用觸媒而使 第三丁基脫離。 144043.doc -11 - 201030468 物 作為此情形時之觸媒,較好的是三氣化领 乙鱗錯合 又,作為溶#卜㈣的是於 々 之水的有機溶劑。作Α μ + 可洛解1質量。/。以上 剛作為上述有機溶劑 醇、乙醇、丙醇'盈$ # & 例如可列舉:甲 基-乙醇、1-丙氧美rt w 軋基·乙醇、卜乙氧 虱基-乙醇、異丙氧基_乙 醇、1-甲氣其设 鮮丁氧基-乙(wherein, R1, R2, a and b have the same meanings as in the above formula (1).) As shown, the carboxyl group can be protected by the third butyl ester group. The above protected compound can be hydrolyzed or condensed in the same manner as the unprotected compound. In the case where the protecting group is a tert-butyl group, the third butyl group may be detached after the above hydrolysis or condensation reaction, using a catalyst as needed. 144043.doc -11 - 201030468 As a catalyst in this case, it is preferable that the three gasification collars are inconsistent with each other, and that the solvent is the organic solvent of the water in the water. As Α μ + can solve 1 quality. /. The above-mentioned organic solvent alcohol, ethanol, and propanol are both exemplified by methyl-ethanol, 1-propoxy rt w-rolling base, ethanol, ethoxylated-ethanol, and isopropoxy. Base_ethanol, 1-methyl gas, which is set to fresh butoxy-B

氧基'2-丙醇、3-甲氧基小丁醇' 3m G 基-1-丁薛笼甲氧基-3 -甲 丞丄J醇等醚醇類;乙酸卜 r 乙妒、7絲1 日、乙酸1-乙氧其 T氧基-2-丙酯、乙酸3_甲氧 3-甲氧基-3-甲Λ·丨丁私梦 丁 S曰、乙酸 土 1 丁知等越醇之乙酸醋類.系細 乙基網等_類.、甲基 矛啊頬,4-爽基_2_ 丁酮、3_經基_3_ 4 -海其田悬·2-τ酮、 土 - 土 _2~戊酮(二丙酮醇)等酮醇類;14-二口号俨 四氫呋喃、1,2-二甲氧基乙烷等醚類等 較好的是甲醇、乙醇、丙醇、曱基乙基嗣、 亏烧、 於使用經保護之化合物作為上述(Α)成分之原料之情形 時,需要脫離保護基之步驟,製造步驟變得繁雜,但具有 難以產生副反應,本發明之永久抗蝕劑之耐熱性、耐化學 品性等提高之優點。 繼而’對使含有具有與Si-H基之反應性之碳_碳雙鍵及 芳香族鲮基的化合物(化合物DAC)與於1分子中具有至少2 個Si-H基之化合物進行矽氫化反應的方法進行說明。 作為於1分子中具有至少2個Si-H基之化合物,例如可列 舉以下述通式(5) 144043.doc •12- (5) 201030468 [化3]Ether alcohols such as oxy '2-propanol, 3-methoxybutanol' 3m G-based 1-butyryl carboxymethoxy-3-carbamyl alcohol; acetic acid br acetamidine, 7 silk 1st, 1-ethoxyxy T-oxy-2-propyl acetate, acetic acid 3-methoxy-3-methoxy-3-carboxamidine, butyl butyl sulfonate S 曰, acetate acetate 1 Acetate and vinegar. Fine ethyl net etc. _ class., methyl spear 頬 4-, 4-cool base 2_ butanone, 3_ carbyl _3_ 4 - haiqitian hang · 2-τ ketone, soil - soil Ketone alcohols such as 1-2~pentanone (diacetone alcohol); ethers such as 14-dione oxime tetrahydrofuran and 1,2-dimethoxyethane; methanol, ethanol, propanol, mercapto In the case of using a protected compound as a raw material of the above (Α) component, a step of removing the protective group is required, the manufacturing step becomes complicated, but it is difficult to generate a side reaction, and the permanent resist of the present invention The advantages of heat resistance, chemical resistance, etc. are improved. Then, the compound (compound DAC) containing a carbon-carbon double bond and an aromatic sulfhydryl group having reactivity with the Si-H group is subjected to hydrazine hydrogenation reaction with a compound having at least two Si-H groups in one molecule. The method is explained. As the compound having at least two Si-H groups in one molecule, for example, the following formula (5) 144043.doc • 12-(5) 201030468 [Chemical 3] can be cited.

(式中,X表7F虱原子或曱基’ R14表示可相同亦可不同之 甲基或苯基’ R15、R16及R17表示可相同亦可不同之碳數 1〜6之烧基、碟數5〜6之環烧基或苯基’ q表示〇〜之 數,r表示0〜1000之數。其中,q為〇或1之情形時,X表示 氫原子。) 所表示之線狀化合物、以及 以下述通式(6) [化4](In the formula, X, 7F, fluorenyl or fluorenyl group, R14, which may be the same or different methyl or phenyl group] R15, R16 and R17 represent the same or different carbon number of 1 to 6 5 to 6 of a cycloalkyl group or a phenyl group 'q represents a number of 〇~, and r represents a number of 0 to 1000. Wherein, when q is 〇 or 1, X represents a hydrogen atom.) The linear compound represented, And the following general formula (6) [Chemical 4]

(6)(6)

(式中,Ru、R19&R2〇表示可相同亦可不同之碳數卜6之烷 基、碳數5〜6之環垸基或苯基,s表示2〜6之數,t表示州成 為3~6的〇~4之數。) 所表示之環狀化合物等 的是以上述通式(6)所表 ’就耐熱性提高之方面而言,較好 示之環狀化合物。 ,叫π 丁砍γ巷,κ 衣π 同亦可不同之甲基或苯基’〜1R17表示可相同 =之碳數1〜6之燒基、碳數W之環烧基或苯基。竹 6之烷基,例如可列舉:甲基乙基丙基、 144043.doc -13· 201030468 基、丁基、異丁基、第二丁基、第三丁基、戊基、異戊 基、第二戊基、第三戊基、己基、第二己基等,作為碳數 5〜6之環烧基’例如可列叛.卢上* 』列舉·環戊基、環己基、環戊基甲 基、甲基環戊基等。 就於工業上容易獲得的方面而言,R14較好的是甲基。 就對石夕氫化反應之影響較少的方面而t,R15較好的是甲 基及乙基’進而較好的是甲基。就本發明之永久抗蝕劑之 对熱性方面而言’ R16及Rl7較好的是甲基、乙基及苯基, 進而較好的是甲基及苯基,最好的是曱基。 X表示氫原子或甲基,q表示Q〜1G⑽之數,『表示〇〜1〇〇〇 之數,於r為0之情形時,χ表示氫原子。 於上述通式(6)中,Ru、Rl9&R2〇表示可相同亦可不同 之碳數1〜6之燒基、碳數5〜6之環烧基或苯基。作為碳數 1〜6之烷基及碳數5〜6之環烷基,可列舉以Rls、Rl6及尺”所 例示之烷基及環烷基。 就矽氫化之反應性良好的方面而言,Rls較好的是碳數 1〜6之烷基,進而較好的是甲基及乙基,最好的是甲基。(wherein, Ru, R19&R2〇 represents an alkyl group having the same or different carbon number, a cycloalkyl group having a carbon number of 5 to 6 or a phenyl group, and s represents a number of 2 to 6, and t represents a state. The number of 〇~4 of 3 to 6. The cyclic compound represented by the above formula (6) is preferably a cyclic compound in terms of improvement in heat resistance. It is called π 砍 γ γ Lane, κ 衣 同 can also be different methyl or phenyl '~1R17 represents the same = carbon number 1~6 of the alkyl group, carbon number of the ring alkyl or phenyl. Examples of the alkyl group of the bamboo 6 include methyl ethyl propyl group, 144043.doc -13·201030468 group, butyl group, isobutyl group, second butyl group, tert-butyl group, pentyl group, isopentyl group, a second pentyl group, a third pentyl group, a hexyl group, a second hexyl group, etc., as a cycloalkyl group having a carbon number of 5 to 6, for example, can be listed as a reneg, a ruthenium, a cyclopentyl group, a cyclohexyl group, a cyclopentyl group. Base, methylcyclopentyl and the like. R14 is preferably a methyl group in terms of industrially readily available. In the case where the influence of the hydrogenation reaction is less, t15 is preferably a methyl group and an ethyl group, and more preferably a methyl group. With respect to the thermal resistance of the permanent resist of the present invention, R16 and Rl7 are preferably a methyl group, an ethyl group and a phenyl group, more preferably a methyl group and a phenyl group, and most preferably a mercapto group. X represents a hydrogen atom or a methyl group, q represents the number of Q~1G(10), and "is a number of 〇~1〇〇〇. When r is 0, χ represents a hydrogen atom. In the above formula (6), Ru, Rl9 & R2〇 represent a carbon group having 1 to 6 carbon atoms which may be the same or different, a cycloalkyl group having 5 to 6 carbon atoms or a phenyl group. Examples of the alkyl group having 1 to 6 carbon atoms and the cycloalkyl group having 5 to 6 carbon atoms include an alkyl group and a cycloalkyl group exemplified by Rls, R16 and a ruler. Rls is preferably an alkyl group having 1 to 6 carbon atoms, more preferably a methyl group and an ethyl group, and most preferably a methyl group.

又,就本發明之永久抗蝕劑之耐熱性方面而言,r1 9及rM 較好的是甲基、乙基及苯基,進而較好的是甲基及笨基, 最好的是甲基。 s表示2〜6之數,t表示s+t成為3〜6的〇〜4之數。就工業上 容易獲得的方面而言,s+t較好的是4〜6,進而較好的是 4〜5 ’最好的是4。又,t較好的是〇。 作為以上述通式(6)所表示之環狀矽氧烷化合物之具體 144043.doc -14· 201030468 例’可列舉:2,4,6-三甲基環三矽氧烷、2,4,6-三乙基環三 石夕氧燒、2,4,6-三苯基環三石夕氧炫、2,4,6,8四甲基環四石夕 氧烧、2,2,4,6,8-五曱基環四石夕氧烧、2,2,4,4,6,8-六甲基環 . 四石夕礼烧、2,4,6,8 -四乙基環四碎氧烧、2,4,6,8 -四苯基環 四石夕氧院、2-乙基_4,6,8-三甲基環四矽氧烷、2-苯基_ 4.6.8- 三曱基環四矽氧烷、2,4,6,8,10-五曱基環五矽氧烷、 2,4,6,8,10-五乙基環五矽氧烷、2,46,81〇_五苯基環五矽氧 φ 烷、2,4,6,8,10,12-六甲基環六矽氧烷、2,4,6,8,10,12-六乙 基環六矽氧烷、2,4,6,8,10,12-六苯基環六矽氧烷等,就工 業上容易獲得的方面而言,較好的是2,4,6,8-四甲基環四 矽氧烷及2,4,6,8,1〇-五甲基環五矽氧烷,進而較好的是 2.4.6.8- 四曱基環四石夕氧燒。 繼而,對化合物DAC進行說明。作為化合物DAC,例如 可列舉:2-乙烯基苯甲酸、3_乙烯基苯甲酸、4_乙烯基苯 甲酸、4-(1·笨基乙烯基)苯甲酸、2_甲基_4乙稀基苯甲 φ 酸、2_烯丙基苯甲酸、%烯丙基苯甲酸、4_烯丙基苯甲 酸、2·異丙烯基苯甲酸、3_異丙烯基苯甲酸、仁異丙烯基 苯甲酸、4-(3-丁烯基)苯甲酸、4_(4_戊烯基)苯甲酸、4_(5_ 己烯基)笨甲酸、4_(6·庚烯基)苯甲酸、4_(7_辛烯基)苯曱 酸、4-(8-壬烯基)苯甲酸、4_(9_癸烯基)苯甲酸、2_乙烯基_ 1,4-本一 F酸、5 -乙稀基- ΐ,3·苯二甲酸等。 於該等化合物DAC中,就工業上容易獲得的方面、本發 明之永久抗蝕劑之耐熱性方面而言,較好的是2_乙烯基苯 甲酸、3-乙烯基苯甲酸、‘乙烯基苯f酸、2·烯丙基苯甲 I44043.doc ltr 201030468 酸、4-烯丙基苯甲酸、2_異丙烯基苯曱酸、4_異丙烯基苯 甲酸,進而較好的是2-乙烯基苯甲酸' 4-乙烯基苯曱酸, 最好的是4-乙稀基苯甲酸。化合物j)AC可僅使用1種,亦 可使用2種以上。 化合物DAC之芳香族羧基可視需要經第三丁基等保護基 所保護。例如芳香族羧基於經第三丁基所保護之情形時, 成為第三丁酯,於矽氫化反應之後,可藉由上述方法使第 三丁基脫離。 使化合物DAC與於1分子中具有至少二個^七基之化合物 φ 進行石夕氫化反應之條件可以公知條件進行。例如可於甲 苯、異丙醇、丙酮、甲基乙基酮、曱基異丁基酮、12-二 曱氧基乙烷、1,4-二啰烷、丨_曱氧基_2_丙醇乙酸酯等溶劑 中,視需要以氣鉑酸、鉑-烯烴錯合物、鉑-羰基乙烯基甲 基錯合物(Ossko觸媒)、鉑-二乙烯基四曱基二矽氧烷錯合 物(Kamedt觸媒)等鉑系觸媒作為觸媒,於反應溫度 2〇〜130°C、較好的是5〇〜8〇它下進行反應,反應結束後, 藉由對溶劑進行減壓蒸㈣去,而自反應液中獲得目標 © 物。 化合物DAC之羧基可與化合物1AS及化合物1CS之情形 同樣地,如上述通式(la)所示般,經第三丁基等保護基所 保護。又,經保護基所保護之化合物可與未經保護之化合 . 物同樣地進行矽氫化反應,且可藉由與化合物ias及化合 物1CS之情形相同之方法而脫離保護基。 本發明之(A)成分之質量平均分子量過小時’存在使用 144043.doc •16· 201030468 正型感光性組合物來形成永久抗蝕劑時之成膜性變得不良 之情形,過大時,存在對鹼性顯影液之溶解性或分散性降 低,驗性顯影後之基板表面之抗勉劑殘逢增加之情形, 又,就操作性及效率等工業化適應性之觀點而言,本發明 之(A)成分之質量平均分子量較好的是600〜50000,進而較 好的是800〜20000,最好的是1000〜10000。再者,於本發 明中,所謂質量平均分子量,係指以四氫呋喃(以下稱作 THF(tetrahydrofuran))作為溶劑而進行 GPC(Gel Permeation Chromatography,凝膠滲透層析)分析之情形時的聚苯乙浠 換算之質量平均分子量。 本發明之(A)成分中所含之以通式(1)所表示之基之個數 較好的是每1分子中為2〜3 00,進而較好的是4〜250,最好 的是6〜200。 又,本發明之(A)成分中所含之以通式(1)所表示之基之 量較好的是1〜60質量%,進而較好的是3〜55質量%,最好 的是5〜50質量%。 就本發明之永久抗蝕劑之密著性提高之方面而言,本發 明之(A)成分較好的是進而於1分子中具有至少1個以下述 通式(2)所表示之基: [化5] (式中,R3表示可具有取代烴基之碳數1〜10之伸烷基,R4 144043.doc -17- 201030468 表示碳數1〜4之燒基’ c表示0或1〜4之數,d表示1〜3之數, 但c+d不超過5)。 於上述通式(2)中,R3表示可具有取代烴基之碳數丨〜切 之伸烧基。作為碳數1〜1〇之伸烷基,可列舉以Ri所例示之 伸烷基,就工業上獲得之容易程度而言,較好的是伸乙 基、伸丙基及伸丁基,進而較好的是伸乙基及伸丁基,最 好的是伸乙基。作為R3中可具有之取代烴基,可列舉以Rl 所例示之烴基等,但就耐熱性方面而言,較好的是不具有 取代烴基。R1與R3可相同亦可不同。 春 R4表示碳數1〜4之烷基。作為碳數丨〜4之烷基,可列舉以 R2所例示之烷基等。作為R4,就耐熱性方面而言,較好的 疋碳數1〜3之烷基,進而較好的是甲基及乙基,最好的是 甲基。R2與R4可相同亦可不同。 c表示0或1〜4之數,d表示卜3之數,但c+d不超過5。〇為 2〜4之數時,R4可為相同之烷基,亦可為不同之烷基。就 耐熱性方面而言,你好的是…之數,進而較好的是〇。 就工業上獲得之容易程度而言’ d較好的是Μ 2之數,進φ 而較好的是1。 以上述通式(2)所表示之基之紛性經基之位置並無特別 限定’就耐熱性提高之方面而言’較好的個酚性羥基 相對於R4而位於對位。 具有以上述通式(2)所表示之基之⑷成分可藉由如下方 法等而製造:使化合物1AS或化合物心與具有以上述通 式⑺所表示之基之燒氧基梦烧化合物(以下稱作化合物 144043.doc -18- 201030468 2AS)或氣石夕烧化合物(以下稱作化合物2cs)進行水解.縮合 反應;或者使化合物DAC、及含有具有與Si_H基之反應性 之碳-碳雙鍵及酚性羥基的化合物(以下稱作化合物DAH), 與於1分子中具有至少2個Si-H基之化合物進行石夕氫化反 應。 首先,對使化合物1AS或化合物1CS與化合物2AS或化合 物2CS進行水解·縮合反應之方法進行說明。 於化合物2AS中,作為R3為伸乙基、c=〇、d=l、且於對 位含有羥基者’例如可列舉:2-(4-羥基笨基)乙基三甲氧 基矽烧、2-(4-羥基苯基)乙基三乙氧基矽烷等三烷氧基矽 烷類;2-(4•羥基苯基)乙基二甲氧基甲基矽烷、2_(4_羥基 苯基)乙基二乙氧基甲基石夕烧、2-(4-經基苯基)乙基二甲氧 基乙基矽烷、2-(4-羥基苯基)乙基二乙氧基乙基矽烷、2_ (4-羥基苯基)乙基二甲氧基丙基矽烷、2-(4-羥基苯基)乙基 二乙氧基丙基矽烷、2-(4-羥基苯基)乙基二甲氧基丁基矽 烧、2-(4-羥基苯基)乙基二乙氧基丁基矽烷、2_(4_羥基苯 基)乙基二甲氧基異丁基石夕烧、2-(4-經基苯基)乙基二乙氧 基異丁基矽烷、2-(4-羥基苯基)乙基二甲氧基環己基矽 烷、2-(4-羥基苯基)乙基二乙氧基環己基矽烷等二烷氧基 矽烷類;2-(4-羥基苯基)乙基甲氧基二甲基矽烷、2-(4-羥 基苯基)乙基乙氧基二甲基矽烷、2-(4-羥基苯基)乙基甲氧 基二乙基矽烷、2-(4-羥基苯基)乙基乙氧基二乙基矽烷、 2-(4-羥基苯基)乙基甲氧基二丙基矽烷、2-(4-羥基苯基)乙 基乙氧基二丙基矽烷、2-(4-羥基苯基)乙基甲氧基二丁基 144043.doc •19- 201030468 矽烷、2-(4-羥基苯基)乙基乙氧基二丁基矽烷、2_(4_經基 苯基)乙基甲氧基二異丁基矽烷、2-(4-羥基苯基)乙基乙氧 基二異丁基矽烷、2-(4-羥基苯基)乙基曱氧基二環己基碎 烧、2-(4-經基苯基)乙基乙氧基二環己基石夕烧等單烧氧基 石夕烧類。 於該等化合物中’就反應性良好且对熱性亦變得良好的 方面而言,較好的是2_(4_羥基苯基)乙基三甲氧基矽烷、 2-(4-經基苯基)乙基三乙氧基石夕烧、2-(4-經基苯基)乙基二 甲氧基甲基矽烷、2-(4-羥基苯基)乙基二乙氧基甲基石夕 燒' 2-(4-羥基苯基)乙基二甲氧基乙基矽烷、2_(4_羥基苯 基)乙基二乙氧基乙基矽烷、2-(4·羥基苯基)乙基三曱氧基 石夕院、2-(4 -經基本基)乙基三乙氧基硬燒,進而較好的是 2-(4-經基苯基)乙基三曱氧基石夕烧、2-(4-經基苯基)乙基二 曱氧基曱基矽烷' 2-(4-羥基苯基)乙基二甲氧基乙基矽 烧’最好的是2-(4-羥基苯基)乙基三曱氧基矽烷、2_(4_經 基苯基)乙基二甲氧基曱基矽烷。化合物2AS可僅使用1 種,亦可使用2種以上。 於化合物2CS中’作為R3為伸乙基、c=〇、d=l '且於對 位含有羥基者,例如可列舉:2-(4-羥基苯基)乙基三氣矽 烧等三氣矽烷類;2-(4-羥基苯基)乙基二氣曱基矽烷、2_ (4-羥基苯基)乙基二氣乙基矽烷、2_(4_羥基苯基)乙基二氯 丙基妙烧、2-(4-羥基笨基)乙基二氣丁基矽烷、2·(4_羥基 笨基)乙基二氣異丁基石夕烧、2-(4-經基苯基)乙基二氣環己 基石夕烧等二氣矽烷類;2-(4-羥基苯基)乙基氣二甲基矽 144043.doc -20- 201030468 烷2 (4輕基笨基)乙基氣二乙基;^、2-(4-經基苯基)乙 基氯二:基錢、2•㈣基苯基)乙基氣二丁基找、2_ (4 &基苯基)乙基氣二異丁基碎烧、2_(4羥基苯基)乙基氣 二環己基石夕燒等單氣石夕院類。Further, in terms of heat resistance of the permanent resist of the present invention, r1 9 and rM are preferably a methyl group, an ethyl group and a phenyl group, and more preferably a methyl group and a stupid group, and most preferably a type A base. s represents the number of 2 to 6, and t represents the number of 〇~4 where s+t becomes 3 to 6. In terms of industrially readily available, s+t is preferably 4 to 6, and more preferably 4 to 5' is preferably 4. Also, t is better. Specific examples of the cyclic siloxane compound represented by the above formula (6) are 144043.doc -14· 201030468, which may be exemplified by 2,4,6-trimethylcyclotrioxane, 2,4. 6-triethylcyclotricarbazone, 2,4,6-triphenylcyclotricarbazone, 2,4,6,8 tetramethylcyclotetrazepine, 2,2,4,6 , 8-penta-based ring four-stone oxy-oxygen, 2,2,4,4,6,8-hexamethyl ring. Four stone ritual burning, 2,4,6,8-tetraethyl ring Oxygen, 2,4,6,8-tetraphenylcyclotetrazepine, 2-ethyl-4,6,8-trimethylcyclotetraoxane, 2-phenyl_ 4.6.8- Triterpene ring tetraoxane, 2,4,6,8,10-pentamethylcyclopentaoxane, 2,4,6,8,10-pentaethylcyclopentaoxane, 2,46 , 81〇_pentaphenylcyclopentaoxane φ alkane, 2,4,6,8,10,12-hexamethylcyclohexaoxane, 2,4,6,8,10,12-hexaethyl Cyclohexaoxane, 2,4,6,8,10,12-hexaphenylcyclohexaoxane, etc., in terms of industrially readily available, 2, 4, 6, 8- Tetramethylcyclotetraoxane and 2,4,6,8,1〇-pentamethylcyclopentaoxane, and more preferably 2.4.6.8-tetradecylcyclotetrazepine. Next, the compound DAC will be described. Examples of the compound DAC include 2-vinylbenzoic acid, 3-vinylbenzoic acid, 4-vinylbenzoic acid, 4-(1·phenylidenevinyl)benzoic acid, and 2-methyl-4-tetraethylene. Benzoic acid, 2-allenylbenzoic acid, allyl benzoic acid, 4-aldolylbenzoic acid, 2·isopropenylbenzoic acid, 3-isopropenylbenzoic acid, n-isopropenylbenzene Formic acid, 4-(3-butenyl)benzoic acid, 4-(4-pentenyl)benzoic acid, 4-(5-hexenyl) benzoic acid, 4-(6-heptenyl)benzoic acid, 4_(7_ Octenyl)benzoic acid, 4-(8-decenyl)benzoic acid, 4-(9-nonenyl)benzoic acid, 2-vinyl-1,4-1,4--F-acid, 5-ethylene - ΐ, 3·phthalic acid, etc. Among these compound DACs, 2 -vinylbenzoic acid, 3-vinylbenzoic acid, 'vinyl group' are preferred in terms of industrially readily available aspects and heat resistance of the permanent resist of the present invention. Benzene f acid, 2·allylbenzyl I44043.doc ltr 201030468 acid, 4-allylbenzoic acid, 2-isopropenylbenzoic acid, 4-isopropenylbenzoic acid, and more preferably 2- Vinylbenzoic acid '4-vinylbenzoic acid, the most preferred is 4-ethylenebenzoic acid. The compound j) may be used alone or in combination of two or more. The aromatic carboxyl group of the compound DAC may optionally be protected by a protecting group such as a third butyl group. For example, when the aromatic carboxyl group is protected by the third butyl group, it becomes a third butyl ester, and after the hydrogenation reaction, the tributyl group can be removed by the above method. The conditions for subjecting the compound DAC to the compound φ having at least two groups of seven groups in one molecule can be carried out under known conditions. For example, it can be used in toluene, isopropanol, acetone, methyl ethyl ketone, decyl isobutyl ketone, 12-dimethoxy ethane, 1,4-dioxane, 丨 曱 曱 oxy 2 _ In a solvent such as an alcohol acetate, if necessary, gas platinum acid, platinum-olefin complex, platinum-carbonyl vinyl methyl complex (Ossko catalyst), platinum-divinyl tetradecyldioxane A platinum-based catalyst such as a complex (Kamedt catalyst) is used as a catalyst, and the reaction is carried out at a reaction temperature of 2 Torr to 130 ° C, preferably 5 Torr to 8 Torr, and after the reaction is completed, the solvent is subjected to a solvent. Steam (4) under reduced pressure, and obtain the target from the reaction solution. The carboxyl group of the compound DAC can be protected by a protecting group such as a third butyl group as in the case of the compound 1AS and the compound 1CS, as shown in the above formula (la). Further, the compound protected by the protecting group can be subjected to the hydrazine hydrogenation reaction in the same manner as the unprotected compound, and the protective group can be removed by the same method as in the case of the compound ias and the compound 1CS. When the mass average molecular weight of the component (A) of the present invention is too small, there is a case where the film forming property is poor when a positive resist is formed by using a positive photosensitive composition of 144043.doc •16·201030468, and when it is too large, it exists. The solubility or dispersibility of the alkaline developing solution is lowered, and the anti-caries agent residue on the surface of the substrate after the in-situ development is increased, and the industrial applicability such as workability and efficiency is the present invention. The mass average molecular weight of the component A) is preferably from 600 to 50,000, more preferably from 800 to 20,000, most preferably from 1,000 to 10,000. In the present invention, the mass average molecular weight refers to polyphenylene when GPC (Gel Permeation Chromatography) analysis is carried out using tetrahydrofuran (hereinafter referred to as THF (tetrahydrofuran)) as a solvent.质量 Converted mass average molecular weight. The number of the groups represented by the formula (1) contained in the component (A) of the present invention is preferably from 2 to 300, more preferably from 4 to 250, per molecule. It is 6~200. Further, the amount of the group represented by the formula (1) contained in the component (A) of the present invention is preferably from 1 to 60% by mass, more preferably from 3 to 55% by mass, most preferably 5 to 50% by mass. In the aspect of improving the adhesion of the permanent resist of the present invention, the component (A) of the present invention preferably further has at least one group represented by the following formula (2) in one molecule: (wherein R3 represents an alkylene group having 1 to 10 carbon atoms which may have a substituted hydrocarbon group, and R4 144043.doc -17- 201030468 represents a burning group of carbon number 1 to 4 'c represents 0 or 1 to 4 The number, d represents the number of 1 to 3, but c + d does not exceed 5). In the above formula (2), R3 represents an alkylene group which may have a carbon number of the substituted hydrocarbon group. The alkylene group having a carbon number of 1 to 1 Å may, for example, be an alkylene group exemplified by Ri. In terms of ease of industrial availability, it is preferred to extend an ethyl group, a propyl group and a butyl group. Preferred are ethyl and butyl groups, and the most preferred ones are ethyl groups. The substituted hydrocarbon group which may be contained in R3 may, for example, be a hydrocarbon group exemplified as R1. However, in terms of heat resistance, it is preferred to have no substituted hydrocarbon group. R1 and R3 may be the same or different. Spring R4 represents an alkyl group having 1 to 4 carbon atoms. Examples of the alkyl group having a carbon number of 丨4 include an alkyl group exemplified by R2. R4 is preferably an alkyl group having 1 to 3 carbon atoms in terms of heat resistance, more preferably a methyl group and an ethyl group, and most preferably a methyl group. R2 and R4 may be the same or different. c represents 0 or 1 to 4, and d represents the number of Bu 3, but c + d does not exceed 5. When 〇 is a number of 2 to 4, R4 may be the same alkyl group or a different alkyl group. In terms of heat resistance, what is good is the number of... and then the better. In terms of the ease of industrial acquisition, 'd is preferably the number of Μ 2, and φ is preferably 1. The position of the divalent radical group represented by the above formula (2) is not particularly limited. The preferred phenolic hydroxyl group is located in the para position with respect to R4 in terms of improvement in heat resistance. The component (4) having a group represented by the above formula (2) can be produced by the following method or the like: a compound 1AS or a compound core and an alkoxylated compound having a group represented by the above formula (7) (below The compound 144043.doc -18-201030468 2AS) or the gas stone compound (hereinafter referred to as the compound 2cs) is subjected to hydrolysis and condensation reaction; or the compound DAC and the carbon-carbon double having reactivity with the Si_H group are contained. A compound having a bond and a phenolic hydroxyl group (hereinafter referred to as a compound DAH) is subjected to a hydrogenation reaction with a compound having at least two Si-H groups in one molecule. First, a method of subjecting the compound 1AS or the compound 1CS to the compound 2AS or the compound 2CS to carry out a hydrolysis/condensation reaction will be described. In the compound 2AS, R3 is an ethyl group, c=〇, d=l, and a hydroxyl group is contained in the para position. For example, 2-(4-hydroxyphenyl)ethyltrimethoxysulfonate is exemplified, a trialkoxynonane such as -(4-hydroxyphenyl)ethyltriethoxydecane; 2-(4•hydroxyphenyl)ethyldimethoxymethylnonane, 2_(4-hydroxyphenyl) Ethyldiethoxymethyl sinter, 2-(4-phenylphenyl)ethyldimethoxyethyl decane, 2-(4-hydroxyphenyl)ethyldiethoxyethyl decane , 2-(4-hydroxyphenyl)ethyldimethoxypropyl decane, 2-(4-hydroxyphenyl)ethyldiethoxypropyl decane, 2-(4-hydroxyphenyl)ethyl Methoxybutyl oxime, 2-(4-hydroxyphenyl)ethyldiethoxybutyl decane, 2-(4-hydroxyphenyl)ethyldimethoxyisobutyl sulphate, 2-( 4-Phenylphenyl)ethyldiethoxyisobutylnonane, 2-(4-hydroxyphenyl)ethyldimethoxycyclohexyldecane, 2-(4-hydroxyphenyl)ethyldiethyl a dialkoxy decane such as oxycyclohexyldecane; 2-(4-hydroxyphenyl)ethylmethoxydimethyl decane, 2-(4-hydroxyphenyl)ethyl B Dimethyldecane, 2-(4-hydroxyphenyl)ethylmethoxydiethyldecane, 2-(4-hydroxyphenyl)ethylethoxydiethyldecane, 2-(4-hydroxyl Phenyl)ethylmethoxydipropylnonane, 2-(4-hydroxyphenyl)ethylethoxydipropylnonane, 2-(4-hydroxyphenyl)ethylmethoxydibutyl 144043 .doc •19- 201030468 decane, 2-(4-hydroxyphenyl)ethylethoxydibutylnonane, 2-(4-diphenylphenyl)ethylmethoxydiisobutylnonane, 2-( 4-hydroxyphenyl)ethylethoxydiisobutyl decane, 2-(4-hydroxyphenyl)ethyl decyloxybicyclohexyl pulverization, 2-(4-phenylphenyl)ethyl b A single-burning oxygen-alkali burning type such as oxydicyclohexyl sulphate. Among these compounds, 2-(4-hydroxyphenyl)ethyltrimethoxydecane, 2-(4-pyridylphenyl) is preferred in terms of good reactivity and also good heat. Ethyl triethoxy zeoxime, 2-(4-phenylphenyl)ethyldimethoxymethyl decane, 2-(4-hydroxyphenyl)ethyldiethoxymethyl zeshi '2-(4-Hydroxyphenyl)ethyldimethoxyethyl decane, 2-(4-hydroxyphenyl)ethyldiethoxyethyl decane, 2-(4.hydroxyphenyl)ethyl three曱 石 夕 、, 2-(4-amino group-based) ethyl triethoxy oxy-burning, and further preferably 2-(4-pyridylphenyl)ethyl ruthenium oxylate, 2- (4-Phenylphenyl)ethyldimethoxyoxydecyl '' 2-(4-hydroxyphenyl)ethyldimethoxyethyl oxime 'The best is 2-(4-hydroxyphenyl) Ethyltrimethoxy decane, 2-(4-diphenylphenyl)ethyldimethoxydecyldecane. The compound 2AS may be used alone or in combination of two or more. In the compound 2CS, 'when R3 is an exoethyl group, c=〇, d=l', and a hydroxyl group is contained in the para position, for example, 2-(4-hydroxyphenyl)ethyl trioxane or the like may be mentioned. Hydranes; 2-(4-hydroxyphenyl)ethylbis gas decane, 2-(4-hydroxyphenyl)ethyldioxaethyl decane, 2-(4-hydroxyphenyl)ethyldichloropropyl Wonderful burning, 2-(4-hydroxyphenyl)ethyldicyclobutyl decane, 2·(4-hydroxyphenyl)ethyldiisobutylene, 2-(4-pyridylphenyl) Dioxanes such as dicyclohexyl ketone; 2-(4-hydroxyphenyl)ethyl dimethyl hydrazine 144043.doc -20- 201030468 alkane 2 (4 light base) ethyl urethane Ethyl; ^, 2-(4-phenylphenyl)ethyl chloride: hydroxy, 2, (tetra)phenyl) ethyl dibutyl, 2 (4 & phenyl) ethyl Diisobutyl ketone, 2_(4-hydroxyphenyl)ethyl, dicyclohexyl sulphate, etc.

於X專化σ物中,就反應性良好且财熱性亦變得良好的 方面而言’較好的是2·(4·羥基苯基)乙基三氣矽烷、2-(4-羥基苯基)乙基二氯曱基矽烷、2·(4_羥基苯基)乙基二氯乙 基矽烷,進而較好的是2_(4_羥基苯基)乙基三氣矽烷、2_ (4-經基本基)乙基二氣曱基石夕烧。化合物2CS可僅使用工 種,亦可使用2種以上。 於化合物2AS或化合物2CS之水解·縮合反應中,就容易 控制反應及除去副產物的方面而言,較好的是使用作為烷 氧基矽烷化合物之化合物2AS。化合物2AS或化合物2CS之 反應之順序並無特別限定,可使化合物丨AS或化合物iCS 反應後,再使化合物2AS或化合物2CS反應,亦可為與此 相反之順序,又’亦可將化合物1 AS或化合物1CS與化合 物2AS或化合物2CS加以混合後進行反應。 化合物2AS或化合物2CS之酚性羥基可視需要如下述通 式(2a) [化6]In the X-specialized σ, in terms of good reactivity and good thermal properties, 'better is 2·(4-hydroxyphenyl)ethyltrioxane, 2-(4-hydroxybenzene). Ethyldichlorodecyl decane, 2·(4-hydroxyphenyl)ethyldichloroethyl decane, more preferably 2_(4-hydroxyphenyl)ethyltrioxane, 2_(4- The basic base) ethyl dihistyl sulfite is burned. The compound 2CS may be used alone or in combination of two or more. In the hydrolysis/condensation reaction of the compound 2AS or the compound 2CS, it is preferred to use the compound 2AS as an alkoxydecane compound in terms of easy control of the reaction and removal of by-products. The order of the reaction of the compound 2AS or the compound 2CS is not particularly limited, and the compound ASAS or the compound iCS may be reacted, and then the compound 2AS or the compound 2CS may be reacted, or the reverse order may be used, and the compound 1 may also be used. The reaction is carried out by mixing AS or Compound 1CS with Compound 2AS or Compound 2CS. The phenolic hydroxyl group of the compound 2AS or the compound 2CS can be visually required as shown in the following formula (2a) [Chemical 6]

(2β) 144043.doc •21- 201030468 (式中,R3、R4、c^d與上述通式⑺中之含義相同。) 所示般,經作為保護基之第三丁醚基所保護。經保護基所 保美之化σ物可與未經保護之化合物同樣地進行碎氫化反 應,可藉由與化合物1AS及化合物iCS之情形相同之方法 而脫離保護基。 繼而’對使化合物DAC及化合物DAH與於1分子中具有 至少2個Si-H基之化合物進行矽氫化反應之方法進行說 明。 作為化合物DAH,例如可列舉:2-乙烯基笨酚、3·乙烯 基苯酚、4-乙稀基苯酚、4-(1-苯基乙烯基)苯酚、2_曱基_ 4-乙烯基苯酚、2-烯丙基苯酚、3-烯丙基苯酚、4_稀丙基 本紛、2 -異丙稀基苯盼、3 -異丙稀基苯紛、4 -異丙烯基苯 酚、4-(3-丁烯基)苯酚、4-(4-戊烯基)苯齡、4-(5-己烯基) 苯酚、4-(6-庚烯基)苯酚、4-(7-辛稀基)苯酚、4_(8_壬烯 基)苯紛、4-(9-癸稀基)苯盼、2-乙稀基-1,4-二經基笨、5· 乙烯基-1,3-二羥基苯等。 於該等化合物中,就工業上容易獲得的方面、本發明之 永久抗餘劑之耐熱性方面而言,較好的是2-乙稀基苯驗、 3 -乙稀基苯盼、4-乙烯基苯盼、2-彿丙基苯紛、4-稀丙基 苯盼、2-異丙烤基苯紛、4-異丙稀基苯盼,進而較好的是 2-乙稀基苯盼、4-乙烯基苯盼,最好的是4-乙烯基苯紛。 化合物DAH可僅使用1種,亦可使用2種以上。 又,使化合物DAC及化合物DAH與於1分子中具有至少2 個Si-H基之化合物進行矽氫化反應的順序並無特別限定, 144043.doc •22· 201030468 可以化合物DAC-化合物DAH之順序進行反應,亦可為與 此相反之順序,又,亦可將化合物DAC與化合物DAH加以 混合後進行反應。再者,化合物DAH之酚性羥基可視需要 如上述通式(2a)所示般,經作為保護基之第三丁醚基所保 護。經保護基所保護之化合物可與未經保護之化合物同樣 地進行矽氫化反應,可藉由與化合物1AS及化合物1CS之 情形相同之方法而脫離保護基。 以相對於以上述通式(1)所表示之基的莫耳比計,以上 a W 述通式(2)所表示之基之含量較好的是0〜80,進而較好的 是1〜70,最好的是2〜60。 就本發明之正型感光性組合物之熱交聯性提高之方面而 言,本發明之(A)成分較好的是進而具有矽醇基。 作為導入矽醇基之方法,例如可列舉藉由使三烷氧基矽 烷基化合物或三氣矽烷基化合物進行水解·縮合反應而導 入之方法。矽醇基存在容易產生縮合反應,且隨著操作, _ 矽醇基之含量減少之情形,因此於溶劑中進行水解·縮合 反應之情形時,較好的是不對產物進行離析,而將溶劑濃 縮或視需要置換成其他溶劑而使用。 • 以下,根據(A)成分之每種製造方法,對導入矽醇基之 . 方法或提高矽醇基含量之方法進行說明。 作為於利用使化合物1AS或化合物1CS進行水解·縮合反 應之方法來製造(A)成分之情形時導入矽醇基之方法,可 藉由使用三烷氧基矽烷作為化合物1 AS,且使用三氣矽烷 化合物作為化合物1CS而導入矽醇基。於三烷氧基矽烷化 144043.doc -23· 201030468 合物中,2個烷氧基矽烷基進行水解.縮合反應而形成si-〇_ Si之鍵,1個烷氧基矽烷基成為矽醇基。同樣地,於三氯 矽烷化合物中,2個氣矽烷基進行水解.縮合反應而形成Si_ O-Si之鍵,1個氣矽烷基成為矽醇基。 石夕醇基含量較多之化合物若進行離析,則容易產生石夕酵 基之脫水反應而形成Si-0-Si之鍵,矽醇基含量降低,因此 反應後,不對產物進行離析,而將溶劑濃縮或將溶劑置換 成其溶劑,藉此可提高矽醇基含量。即便使用二烷氧基石夕 烧化合物作為化合物1 AS,且使用二氣矽烷化合物作為化 合物1CS,亦無法增加矽醇基之數,但可藉由增加(A)成分 之分子量而減少揮發成分。又,於使化合物1AS或化合物 1CS進行水解·縮合反應時,併用其他三烷氧基矽烷基化合 物可使矽醇基之含量提高,且使(A)成分之分子量增加, 揮發成分減少,故較好。於此情形時,二烷氧基矽烷化合 物雖然未使矽醇基增加,但由於(A)成分之分子量之增加 而使揮發成分減少,故亦可併用。 作為其他三烷氧基矽烷或二烷氧基矽烷,可列舉:烷基 烷氧基矽烷化合物、環烷基烷氧基矽烷化合物、芳基烷氧 基矽烷化合物、芳基烷基烷氧基矽烷化合物’就本發明之 永久抗蝕劑之耐熱性及密著性提高之方面而言,較好的是 芳基烧氧基石夕院化合物’進而較好的是以下述通式⑷所表 示之芳基烷氧基矽烷化合物·· [化7] 144043.doc •24- 201030468 (,气:)> (式中,R11表示可相同亦可不同之碳數丨〜6之烷基或環烷 基,R12表示碳數卜3之烷基,Rn表示可相同亦可不同之碳 數1〜4之烷基,f表示2〜3之數,g表示〇或卜5之數)。(2β) 144043.doc • 21- 201030468 (wherein R3, R4, and c^d have the same meanings as in the above formula (7).) As shown, it is protected by a third butyl ether group as a protective group. The protected sigma can be subjected to a fragmentation hydrogenation reaction in the same manner as the unprotected compound, and the protective group can be removed by the same method as in the case of the compound 1AS and the compound iCS. Next, a method of subjecting the compound DAC and the compound DAH to a hydrazine hydrogenation reaction with a compound having at least two Si-H groups in one molecule will be described. Examples of the compound DAH include 2-vinyl phenol, 3·vinyl phenol, 4-ethylene phenol, 4-(1-phenylvinyl) phenol, and 2 fluorenyl 4-vinyl phenol. , 2-allylphenol, 3-allylphenol, 4-dipropyl propyl, 2-isopropylisoben, 3-isopropylthiophene, 4-isopropenylphenol, 4-( 3-butenyl)phenol, 4-(4-pentenyl)benzene, 4-(5-hexenyl)phenol, 4-(6-heptenyl)phenol, 4-(7-octyl) Phenol, 4_(8-decenyl)benzene, 4-(9-fluorenyl)benzene, 2-ethylene-1,4-dipyridyl, 5-vinyl-1,3- Dihydroxybenzene and the like. Among these compounds, in terms of industrially readily available aspects and heat resistance of the permanent anti-surplus agent of the present invention, 2-ethylene benzene is inspected, 3-ethene benzene is expected, and 4- Vinyl benzene, 2-propyl benzene, 4- propyl phenyl, 2-isopropyl benzophenone, 4-isopropyl benzophenone, and more preferably 2-ethenyl benzene Hope, 4-vinyl benzene, the best is 4-vinyl benzene. The compound DAH may be used alone or in combination of two or more. Further, the order of the hydrazine hydrogenation reaction of the compound DAC and the compound DAH with a compound having at least two Si-H groups in one molecule is not particularly limited, and 144043.doc •22· 201030468 can be carried out in the order of the compound DAC-compound DAH. The reaction may be carried out in the reverse order, and the compound DAC may be mixed with the compound DAH to carry out a reaction. Further, the phenolic hydroxyl group of the compound DAH may be protected by a third butyl ether group as a protective group as shown in the above formula (2a). The compound protected by the protecting group can be subjected to a hydrogenation reaction in the same manner as the unprotected compound, and the protecting group can be removed by the same method as in the case of the compound 1AS and the compound 1CS. The content of the base represented by the above formula (2) is preferably from 0 to 80, more preferably from 1 to 10, based on the molar ratio of the group represented by the above formula (1). 70, the best is 2~60. In the aspect of improving the thermal crosslinkability of the positive photosensitive composition of the present invention, the component (A) of the present invention preferably further has a decyl group. As a method of introducing a sterol group, for example, a method of introducing a trialkoxy sulfonium alkyl compound or a trihaloalkylene compound into a hydrolysis/condensation reaction can be mentioned. The sterol group is liable to cause a condensation reaction, and the content of the sterol group decreases as the operation proceeds. Therefore, when the hydrolysis/condensation reaction is carried out in a solvent, it is preferred that the product is not isolated and the solvent is concentrated. Or use it as needed to replace it with other solvents. • Hereinafter, a method of introducing a sterol group or a method of increasing the content of a sterol group will be described based on each production method of the component (A). In the case of producing the component (A) by a method of subjecting the compound 1AS or the compound 1CS to a hydrolysis/condensation reaction, a method of introducing a sterol group can be carried out by using a trialkoxydecane as the compound 1 AS and using three gases. The decane compound is introduced as a compound 1CS to a sterol group. In the trialkoxy decane 144043.doc -23· 201030468, two alkoxyfluorenyl groups are hydrolyzed. The condensation reaction forms a bond of si-〇-Si, and one alkoxyalkyl group becomes a sterol. base. Similarly, in the trichloromethane compound, two gas alkyl groups undergo hydrolysis and condensation reaction to form a bond of Si_O-Si, and one gas alkyl group becomes a sterol group. If the compound having a large content of the alcoholic group is isolated, the dehydration reaction of the lyophilized substrate is liable to form a bond of Si-0-Si, and the content of the sterol group is lowered. Therefore, after the reaction, the product is not isolated, but The solvent is concentrated or the solvent is replaced with a solvent thereof, whereby the sterol group content can be increased. Even if a dialkoxyzepine compound is used as the compound 1 AS and a dioxane compound is used as the compound 1CS, the number of sterol groups cannot be increased, but the volatile component can be reduced by increasing the molecular weight of the component (A). Further, when the compound 1AS or the compound 1CS is subjected to a hydrolysis/condensation reaction, the content of the sterol group can be increased by using another trialkoxysulfonyl group compound, and the molecular weight of the component (A) is increased, and the volatile component is decreased. it is good. In this case, although the dialkoxydecane compound does not increase the sterol group, the volatile component is reduced by the increase in the molecular weight of the component (A), so that it can be used in combination. Examples of the other trialkoxy decane or dialkoxy decane include an alkyl alkoxy decane compound, a cycloalkyl alkoxy decane compound, an aryl alkoxy decane compound, and an arylalkyl alkoxy decane. In the aspect of improving the heat resistance and the adhesion of the permanent resist of the present invention, the aryloxyalkyl oxalate compound is further preferably represented by the following formula (4). Alkoxy alkane compound···················· R12 represents an alkyl group of carbon number 3, Rn represents an alkyl group of 1 to 4 carbon atoms which may be the same or different, f represents a number of 2 to 3, and g represents a number of ruthenium or ruthenium.

作為烷基烷氧基矽烷化合物,可列舉:曱基三曱氡基矽 烷、甲基二乙氧基矽烷、乙基三甲氧基矽烷、乙基三乙氧 基矽烷、丙基三曱氧基矽烷、丙基三乙氧基矽烷、異丙基 二甲氧基矽烷、異丙基三乙氧基矽烷、丁基三曱氧基矽 烷、丁基三乙氧基矽烷、異丁基三甲氧基矽烷、異丁基三 乙氧基石夕烧、第二丁基二甲氧基石夕燒、第三丁基三乙氧基 矽烷等烷基三烷氧基矽烷化合物,二甲基二曱氧基石夕燒、 二曱基二乙氧基矽烷、二乙基二甲氧基矽烷、二乙基二乙 氧基矽烷、二丙基二甲氧基矽烷、二丙基二乙氧基矽烷、 二異丙基二甲氧基矽烷、二異丙基二乙氧基矽烷、二丁基 一曱氧基石夕烧、一 丁基二乙氧基妙烧、二異丁基二甲氧基 矽烷、二異丁基二乙氧基矽烷、二(第三丁基)二曱氧基矽 烷、二(第三丁基)二乙氧基矽烷等二烷基二烷氧基矽烷化 合物;作為環烧基烧氧基石夕烧化合物,可列舉··環己基= 曱氧基矽烧、環己基三乙氧基矽烷等環烷基三烷氧基矽烷 化合物,二環己基二甲氧基矽烷、二環己基二乙氧基石夕 烧、環己基(甲基)二乙氧基石夕烧等環烧基二烧氧基石夕烧化 合物;作為芳基烷基烷氧基矽烷化合物,可列舉:节基三 甲氧基矽烷、苄基三乙氧基矽烷等芳基烷基三烷氧基矽烷 144043.doc •25- 201030468 化合物,二苄基二曱氧基矽烷、二苄基二乙氧基矽烷、苄 基(曱基)二甲氧基矽烷等芳基烷基二烷氧基矽烷化合物。 作為以上述通式(4)所表示之芳基烷氧基矽烷化合物, 例如可列舉:苯基三甲氧基矽烷、苯基三乙氧基矽烷、曱 苯甲醯基三甲氧基矽烷、二曱苯基三曱氧基矽烷、異丙苯 基三甲氧基矽烷、第三丁基苯基三乙氧基矽烷、苯基曱基 二甲氧基矽烷、苯基甲基二乙氧基矽烷、曱苯曱醯基甲基 二曱氧基矽烷、二曱苯基甲基二曱氧基矽烷、異丙苯基甲 基二甲氧基矽烷、苯基乙基二曱氧基矽烷、苯基丙基二曱 氧基矽烷、苯基丁基二甲氧基矽烷、苯基己基二甲氧基矽 烷、苯基環己基二曱氧基矽烷、苯基二曱基甲氧基矽烷 等。 於該等化合物中,就耐熱性與密著性提高之方面而言, 較好的是苯基三甲氧基矽烷、苯基三乙氧基矽烷、苯基甲 基二甲氧基矽烷及苯基曱基二乙氧基矽烷,進而較好的是 苯基三甲氧基矽烷及苯基三乙氧基矽烷,最好的是苯基三 甲氧基矽烷。 又,作為於利用使化合物DAC與於1分子中具有至少2個 Si-H基之化合物進行矽氫化反應之方法來製造(A)成分之 情形時導入矽醇基之方法,係將化合物DAC之一部分置換 為含有具有與Si-H基之反應性之碳-碳雙鍵的其他烷氧基 矽烷化合物(以下稱作化合物DS)而進行矽氫化反應,並使 所得之產物與上述其他三烷氧基矽烷或二烷氧基矽烷(較 好的是以上述通式(4)所表示之芳基烷氧基矽烷化合物)進 144043.doc -26- 201030468 行水解.縮合反應,藉此獲得具有矽醇基之成分。為了 提高矽醇基之含量,於水解.縮合反應後,不對產物進行 離析,而將溶劑濃縮或將溶劑置換成其他溶劑即可。仃 #作為化合物DS,可列舉:三甲氧基乙烯基矽烷、三甲 氧基烯丙基矽烷、三甲氧基異丙烯基矽烷、三甲氧基+丁 稀基石夕垸、三f氧基_4_戊稀基㈣、三甲氧基_5_已稀基 矽烷、二甲氧基-6-庚烯基矽烷、三曱氧基-7-辛烯基矽 烷、二甲氧基-8-壬烯基矽烷、三甲氧基_9_癸烯基矽烷、 三乙氧基乙烯基矽烷、三乙氧基烯丙基矽烷、三乙氧基異 丙烯基矽烷、三乙氧基_3_丁烯基矽烷、三乙氧基戊烯 基矽烷、三乙氧基_5_己烯基矽烷、三乙氧基_6_庚烯基矽 烷、二乙氧基-7-辛烯基矽烷、三乙氧基_8_壬烯基矽烷、 三乙氧基-9-癸烯基矽烷、二曱氧基曱基乙烯基矽烷、二甲 氧基乙基乙烯基矽烷、二曱氧基丙基乙烯基矽烷、二甲氧 基異丙基乙烯基矽烷、甲氧基二甲基乙烯基矽烷、甲氧基 二乙基乙烯基矽烷等。 於該等化合物中,就耐熱性與密著性提高之方面而言, 較好的是三甲氧基乙烯基矽烷、三乙氧基乙烯基矽烷、三 甲氧基烯丙基矽烷及二甲氧基甲基乙烯基矽烷,進而較好 的是三甲氧基乙埽基矽烷及三乙氧基乙烯基矽烷,最好的 是二甲氧基乙烯基矽烷。化合物〇8可僅使用丨種亦可使 用2種以上。 (Α)成分中之矽醇基之含量以oh之含量計,較好的是 1〜3〇質量% ’進而較好的是3〜25質量。/〇,最好的是5〜2〇質 144043.doc -27- 201030468 量%。 作為本發明之(A)成分之矽醇基之定量方法,可列舉: 利用三甲基氣矽烷等使矽醇基進行三甲基矽烷化,藉由反 應前後之重量增加量來定量之方法(TMS(trimethylsilyl, 三曱基矽燒基)化法);藉由使用近紅外線分光光度計(參照 曰本專利特開2〇〇1_2〇8683號公報、曰本專利特開2003- 3 5667號公報等)或29si-NMR(參照日本專利特開2007- 217249號公報等)之機器分析來定量之方法。 作為本發明之(A)成分’最好的是使以下述通式(3) [化8]The alkyl alkoxydecane compound may, for example, be mercaptotridecyldecane, methyldiethoxydecane, ethyltrimethoxydecane, ethyltriethoxydecane or propyltrimethoxydecane. , propyl triethoxy decane, isopropyl dimethoxy decane, isopropyl triethoxy decane, butyl trimethoxy decane, butyl triethoxy decane, isobutyl trimethoxy decane , an alkyltrialkoxy decane compound such as isobutyltriethoxy sinter, a second butyl dimethoxy sinter, a third butyl triethoxy decane, or a dimethyl di decyl oxide , Dimercaptodiethoxydecane, diethyldimethoxydecane, diethyldiethoxydecane, dipropyldimethoxydecane, dipropyldiethoxydecane, diisopropyl Dimethoxy decane, diisopropyl diethoxy decane, dibutyl methoxy oxime, monobutyl diethoxy, diisobutyl dimethoxy decane, diisobutyl Dialkyldialkoxyalkylation of diethoxydecane, di(t-butyl)dimethoxy decane, di(t-butyl)diethoxydecane Examples of the cycloalkyl group-containing alkoxylated compound include a cycloalkyltrial alkoxy decane compound such as cyclohexyl group, anthracene oxime or cyclohexyltriethoxydecane, and dicyclohexyl dimethyl hydride. a cycloalkyl azolyl oxide compound such as oxydecane, dicyclohexyldiethoxy sinter, cyclohexyl (methyl) diethoxy sinter; as an arylalkyl alkoxy decane compound, Listed: arylalkyltrialkoxydecanes such as benzyl trimethoxydecane, benzyltriethoxydecane, 144043.doc •25- 201030468 Compound, dibenzyldimethoxy decane, dibenzyldiethoxy An arylalkyldialkoxydecane compound such as a decane or a benzyl (indenyl) dimethoxydecane. Examples of the aryl alkoxydecane compound represented by the above formula (4) include phenyltrimethoxydecane, phenyltriethoxynonane, fluorenyltrimethoxydecane, and diterpene. Phenyl trimethoxy decane, cumyl trimethoxy decane, tert-butylphenyl triethoxy decane, phenyl decyl dimethoxy decane, phenyl methyl diethoxy decane, hydrazine Phenylmethyl dimethyl decyl decane, diphenyl phenyl dimethyl decyl decane, cumyl methyl dimethoxy decane, phenyl ethyl decyl decane, phenyl propyl Dimethoxydecane, phenylbutyldimethoxydecane, phenylhexyldimethoxydecane, phenylcyclohexyldimethoxyoxydecane, phenyldianonylmethoxydecane, and the like. Among these compounds, phenyltrimethoxydecane, phenyltriethoxydecane, phenylmethyldimethoxydecane, and phenyl are preferred in terms of heat resistance and adhesion. Further, decyldiethoxydecane is further preferably phenyltrimethoxydecane and phenyltriethoxydecane, and most preferably phenyltrimethoxydecane. Further, as a method of producing a component (A) by a method in which a compound DAC is subjected to a hydrogenation reaction with a compound having at least two Si-H groups in one molecule, a method of introducing a sterol group is a method of introducing a compound DAC. Part of the substitution is carried out by a hydrazine hydrogenation reaction with another alkoxydecane compound having a carbon-carbon double bond having reactivity with a Si-H group (hereinafter referred to as a compound DS), and the obtained product and the above other trialkoxy A decane or a dialkoxy decane (preferably an aryl alkoxy decane compound represented by the above formula (4)) is subjected to hydrolysis and condensation reaction at 144043.doc -26 to 201030468, whereby a ruthenium is obtained. An alcohol-based component. In order to increase the content of the sterol group, after the hydrolysis and condensation reaction, the product is not isolated, and the solvent is concentrated or the solvent is replaced with another solvent.仃# As the compound DS, there may be mentioned: trimethoxyvinyl decane, trimethoxy allylic decane, trimethoxy isopropenyl decane, trimethoxy + butyl sulphate, trif oxy -4- _ Dilute (tetra), trimethoxy _5_ pentyl decane, dimethoxy-6-heptenyl decane, tridecyloxy-7-octenyl decane, dimethoxy-8-nonenyl decane , trimethoxy-9-nonenyl decane, triethoxy vinyl decane, triethoxy allylic decane, triethoxy isopropenyl decane, triethoxy -3- butylene decane, Triethoxypentenyl decane, triethoxy _5-hexenyl decane, triethoxy -6-heptenyl decane, diethoxy-7-octenyl decane, triethoxy _ 8_decenyl decane, triethoxy-9-nonenyl decane, dimethoxy fluorenyl vinyl decane, dimethoxyethyl vinyl decane, dimethoxy propyl vinyl decane, two Methoxyisopropyl vinyl decane, methoxy dimethyl vinyl decane, methoxy diethyl vinyl decane, and the like. Among these compounds, preferred are trimethoxyvinylnonane, triethoxyvinylnonane, trimethoxyallyldecane and dimethoxy in terms of heat resistance and adhesion. Methyl vinyl decane is further preferably trimethoxy ethane decane and triethoxy vinyl decane, and most preferred is dimethoxy vinyl decane. The compound 〇8 may be used alone or in combination of two or more. The content of the sterol group in the (Α) component is preferably from 1 to 3 % by mass based on the content of oh, and more preferably from 3 to 25 parts by mass. /〇, the best is 5~2 enamel 144043.doc -27- 201030468%. The method for quantifying the sterol group of the component (A) of the present invention is exemplified by a method in which a sterol group is subjected to trimethylsulfanization using trimethyl gas oxime or the like, and the amount of weight increase before and after the reaction is quantified ( TMS (trimethylsilyl, trimethylsilyl) method; by using a near-infrared spectrophotometer (refer to Japanese Patent Laid-Open No. Hei 2 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 The method of quantitative analysis by machine analysis of 29si-NMR (refer to Japanese Patent Laid-Open Publication No. 2007-217249, etc.). The component (A) of the present invention is preferably made by the following formula (3) [Chemical 8]

基之碳數1〜1〇之伸烧基,R2及R4表示可相同亦可不同之石炭 數1~4之燒基,R5、R6及R7表示可相同亦可不同之碳數 1〜10之烷基或苯基。a表示〇或1〜4之數,b表示1〜3之數, 但a+b不超過5。c表示0或1〜4之數,d表示1〜3之數’但c+d 不超過5。R9表示可相同亦可不同之碳數1〜6之烷基或環烷 基’ R G表示碳數1〜3之烷基,e表示i〜3之數。m、n&p表 示111 . 11 . P=1 : 0〜2 : 0.5~3&m+n+p=3~6之數。) 所表不之環狀矽氧烷化合物與以上述通式(4)所表示之芳基 144043.doc -28- 201030468 烷氧基矽烷化合物反應所得之矽氧樹脂。 於上述通式(3)中,關於以上述通式(1)及通式(2)為來源 之部分,即R1、R2、R3及R4以及a、b、c及d ’通式⑴及通 式(2)之說明適宜應用。R8可相同亦可不同’表示可具有取 代烴基之碳數1〜10之伸烷基,R5、R6及R7表示可相同亦可 不同之碳數1〜10之烷基或苯基。R9表示可相同亦可不同之 碳數1〜6之烷基或環烷基,R1Q表示碳數1〜3之烷基。The carbon number of the base is 1~1〇, and R2 and R4 are the same or different calcined carbon number 1~4, and R5, R6 and R7 are the same or different carbon numbers 1~10. Alkyl or phenyl. a represents 〇 or the number of 1 to 4, and b represents the number of 1 to 3, but a+b does not exceed 5. c represents 0 or 1 to 4, and d represents the number 1 to 3 'but c + d does not exceed 5. R9 represents an alkyl group or a cycloalkyl group having 1 to 6 carbon atoms which may be the same or different. ' R G represents an alkyl group having 1 to 3 carbon atoms, and e represents the number of i to 3. m, n &p represents 111 . 11 . P=1 : 0~2 : 0.5~3&m+n+p=3~6. An anthracene resin obtained by reacting a cyclic oxirane compound represented by the above aryl group 144043.doc -28-201030468 alkoxydecane compound represented by the above formula (4). In the above formula (3), the parts derived from the above formula (1) and formula (2), that is, R1, R2, R3 and R4 and a, b, c and d 'the formula (1) and The description of formula (2) is suitable for application. R8 may be the same or different and represents an alkylene group having 1 to 10 carbon atoms which may have a substituted hydrocarbon group, and R5, R6 and R7 represent an alkyl group or a phenyl group which may be the same or different and have a carbon number of 1 to 10. R9 represents an alkyl group or a cycloalkyl group having 1 to 6 carbon atoms which may be the same or different, and R1Q represents an alkyl group having 1 to 3 carbon atoms.

❹ 作為碳數1〜10之伸烷基,可列舉以R1所例示之伸烷基, 作為R8中可具有之取代烴基,可列舉以R1所例示之烴基 等,作為碳數1〜10之烷基,可列舉:甲基、乙基、丙基、 異丙基、丁基、異丁基、第二丁基、第三丁基、戊基、第 二戊基、第三戊基、己基、庚基、辛基、異辛基、2_乙基 己基、第二辛基、壬基、異壬基、癸基,作為碳數1〜6之 烷基,可列舉以R15、Ri6及所例示之烷基,作為環烷 基,可列舉:環戊基、環己基、甲基環戊基、環戊基曱 基’作為碳數1〜3之烷基’可列舉:甲基、乙基、丙基、 異丙基。 就工業上獲得之容易程度而言,Rl、r3&rS較好的是伸 乙基、伸丙基及伸丁基,進而較好的是伸乙基及伸丁基, 最料是伸乙基。就工業上獲得之容易程度而言,r5、r6 及R7較好的是甲基、乙基、丙基、異丙基、丁基、異丁 基、第三丁基及苯基’就耐熱性提高之方面而t,R5 r6 及f"而較好的是曱基、乙基及苯基,最好料甲基。就 提高之方面而言,R9較好的是甲基或乙基,進而較 144043.doc -29- 201030468 好的是甲基。就耐熱性提高之方面而言,R10較好的是甲 基。 尺 e表示1〜3之數,m、η及p表示m : ^ : p=1 : 〇〜2 : 〇 5~3 且m+n+p=3〜6之數。以通式(3)所表示之環狀矽氧烷化合物 可僅使用一種,亦可組合使用2種以上。於組合使用2種以 上之情形時,m、η及P之數為平均之數。例如m=l、n==〇、 P=3之化合物與m = 1、n=1、p=2之化合物的等莫耳混合物 可表示為m : n : p=l : 〇·5 : 2.5。就高溫熱歷程後之耐化 學藥品性提高之方面而言,η相對於m之比較好的是, 進而較好的是0.01〜0.7,最好的是〇.02〜〇·5。又,就本發 明之正型感光性組合物之熱交聯性提高之方面而言,ρ較 好的是至少為2之數。 以上述通式(3)所表示之環狀矽氧烷化合物如上所述 般,可使以上述通式(6)所表示之環狀矽氧烷化合物、與化 合物DS、化合物DAC、化合物DS及化合物DAH進行矽氫 化而製造。以通式(3)所表示之環狀矽氧烷化合物可為相同 者’亦可為若干種之混合物。於此情形時,於矽氧樹脂之 分子中存在複數個源自以通式(3)所表示之環狀矽氧烷化合 物之基’故通式(3)之m、η及ρ之值成為分子中之平均值。 可使用叛基或盼性羥基經第三丁基等所保護之化合物, 例如以下述通式(3a) [化9] 144043.doc -30- 201030468 述通式(3)❹ The alkylene group having a carbon number of 1 to 10 may, for example, be an alkylene group exemplified by R1, and the substituted hydrocarbon group which may be represented by R8, and a hydrocarbon group exemplified by R1 may be mentioned as an alkyl group having 1 to 10 carbon atoms. The base may, for example, be methyl, ethyl, propyl, isopropyl, butyl, isobutyl, t-butyl, tert-butyl, pentyl, second pentyl, third pentyl, hexyl, Heptyl, octyl, isooctyl, 2-ethylhexyl, second octyl, decyl, isodecyl, fluorenyl, as alkyl having 1 to 6 carbon atoms, exemplified by R15, Ri6 and exemplified The alkyl group may, for example, be a cyclopentyl group, a cyclohexyl group, a methylcyclopentyl group or a cyclopentyl fluorenyl group as the alkyl group having a carbon number of 1 to 3, and examples thereof include a methyl group and an ethyl group. Propyl, isopropyl. In terms of ease of industrial availability, Rl, r3 & rS are preferably ethyl, propyl and butyl, and more preferably ethyl and butyl, most preferably ethyl . In terms of ease of industrial availability, it is preferred that r5, r6 and R7 are methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tert-butyl and phenyl groups in terms of heat resistance. In terms of improvement, t, R5 r6 and f" and preferably thiol, ethyl and phenyl, preferably methyl. In terms of improvement, R9 is preferably a methyl group or an ethyl group, and is preferably a methyl group as compared with 144043.doc -29-201030468. In terms of improvement in heat resistance, R10 is preferably a methyl group. The ruler e represents the number of 1 to 3, and m, η and p represent m : ^ : p = 1: 〇 〜 2 : 〇 5~3 and m + n + p = 3 to 6. The cyclic siloxane compound represented by the formula (3) may be used alone or in combination of two or more. When two or more kinds are used in combination, the number of m, η, and P is an average number. For example, an equimolar mixture of a compound of m=l, n==〇, P=3 and a compound of m=1, n=1, p=2 can be expressed as m : n : p=l : 〇·5 : 2.5 . The η is preferably 0.01 to 0.7, more preferably 〇.02 to 〇·5, in terms of chemical resistance improvement after high temperature heat history. Further, in terms of improvement in thermal crosslinkability of the positive photosensitive composition of the present invention, ρ is preferably at least 2 in number. The cyclic siloxane compound represented by the above formula (3) can be a cyclic oxirane compound represented by the above formula (6), a compound DS, a compound DAC, a compound DS, and the like. The compound DAH was produced by hydrogenation of hydrazine. The cyclic siloxane compound represented by the formula (3) may be the same or a mixture of several kinds. In this case, a plurality of molecules derived from the cyclic siloxane compound represented by the general formula (3) are present in the molecule of the oxime resin, and the values of m, η, and ρ of the general formula (3) become The average value in the molecule. A compound which is protected by a tert-butyl group or a desired hydroxyl group by a third butyl group or the like can be used, for example, the following formula (3a) [Chemical Formula 9] 144043.doc -30- 201030468

所表示之環狀矽氧烷化合物,來替代以上述通式(3)所表示 之環狀矽氧烷化合物(3),藉由使以上述通式(3a)所表示2 環狀矽氧烷化合物與以上述通式(4)所表示之芳基烷氧基矽 烷化合物反應後,脫離第三丁基,可製成作為本發明之 (A)成分之矽氧樹脂。 繼而,對作為本發明之(B)成分的具有縮水甘油基之矽 氧烧化合物進行說明。The cyclic oxoxane compound represented by the above formula (3) is substituted for the cyclic oxirane compound (3) represented by the above formula (3), and the cyclic oxirane represented by the above formula (3a) is used. After reacting the compound with the arylalkoxydecane compound represented by the above formula (4), the tributyl group is removed, and the oxime resin which is the component (A) of the present invention can be obtained. Next, the oxyhydrogenated compound having a glycidyl group as the component (B) of the present invention will be described.

中之含義相同。) 作為本發明之(B)成分的具有縮水甘油基之石夕氧烧化合 物於1分子中具有至少1個縮水甘油基與至少1個矽氧烷基 (以Si-〇_Sl所表示之基)。縮水甘油基之數較好的是於1分 子中為至少2個,作為上述含有縮水甘油基之矽氧烷化合 物’例如可列舉:以下述通式 [化 10]The meaning is the same. The glycidyl group having a glycidyl group as the component (B) of the present invention has at least one glycidyl group and at least one nonoxylalkyl group in one molecule (the group represented by Si-〇_Sl) ). The number of glycidyl groups is preferably at least 2 in the range of 1 molecule, and the glycidyl group-containing oxirane compound is exemplified by the following formula:

(7) (式中 Y表示具有縮水甘油基之基或曱基,G表示具有縮 144043.doc -31 - 201030468 之曱基或苯基,(7) wherein Y represents a group having a glycidyl group or a fluorenyl group, and G represents a fluorenyl group or a phenyl group having a condensed 144043.doc -31 - 201030468,

^教,W表示〇〜1000 水甘油基之基’ R21表示可相同亦可不间 R22、R23 數5〜6之3 _ 之數。其中,於U為〇或1之情形時’ γ表示氫原子 所表示之線狀矽氧烷化合物、 以下述通式(8) [化 11]^Teach, W means 〇~1000 hydroglyceryl base' R21 means the same or no R22, R23 number 5~6 of 3 _. Wherein, when U is 〇 or 1, 'γ represents a linear siloxane compound represented by a hydrogen atom, and has the following general formula (8) [Chem. 11]

(式中,R25、R26及 R 表示可相同亦可不同之碳數之烷 基、碳數5〜6之環烷基或苯基,G表示具有縮水甘油基之 基,X表示2~6之數,y表示x + y成為3〜6的〇〜4之數。) 所表示之環狀矽氧烷化合物、及 具有縮水甘油基之烷氧基矽烷之水解‘縮合反應物等。 首先,對以上述通式(7)所表示之線狀矽氧烧化合物進 行說明。 於上述通式(7)中,γ表示具有縮水甘油基之基或曱基, G表示具有縮水甘油基之基,表示可相同亦可不同之曱 基或苯基’ R 、R23及R24表示可相同亦可不同之碳數1〜6 之烷基、碳數5〜6之環烷基或苯基。 就容易製造之方面而言,R21較好的是甲基。作為碳數 1〜6之烷基、碳數5〜6之環烷基,可列舉以R15、所 例示之基。就容易製造之方面而言,R22較好的是曱基及 144043.doc •32- 201030468 乙基,進而較好的是甲基。就本發明之永久抗蝕劑之耐熱 陡方面而5,R 3及r24較好的是甲基、乙基及苯基,進而 杈好的是甲基及笨基,最好的是甲基。 X表不氫原子或曱基’ U表示卜1000之數’ W表示〇〜1000 之數’於u為0或1之情形時,X表示氫原子。 、过通式(7)所表示之線狀^夕氧烧化合物可藉由使含 有具有與Si_H基之反應性之碳碳雙鍵及縮水甘油基的化 ❹ 鲁 口物與以上述通式(5)所表示之線狀化合物進行⑨氫化反應 而製造。 ’ 作為含有具有與Si_H基之反應性之碳·碳雙鍵及縮水甘 油基之化合物’例如可列舉:乙烯基縮水甘油喊、稀丙基 縮水甘油ϋ、5_縮水甘油氧基丙基_2_㈣伯烯等,就工業 上獲得之容易程度與梦氫化之反應性而言,較好的是浠丙 基縮水甘油趟。 一 〜/刊爪%令、物之分子中之 環氧基之比例過少時,交聪於里 如 乂聯效果變少,本發明之永久抗蝕 劑之物性降低,故以通式所 ()所表不之線狀矽氧烷化合物之 環氧當量較好的是】〇〇〇以下 卜進而較好的是700以下,最 好的是350以下。再者,所喟 ^ "月衣巩备篁,係指分子量除以 裒氧基之數所得之值,即虚1個 個環軋基對應之分子量。 以上述通式(7)所表示之線肤 緣狀碎氧烷化合物之分子量並 "、、特別限定,但於過大之情形 時’存在對鹼性顯影液之溶 解性或为散性降低而於驗性顯影 ^ ± 嘴办後之基板表面殘留抗蝕劑 殘造之情形,故質量平均分子 卞量較好的是20000以下,進 144043.doc •33· 201030468 而較好的是15000以下,最好的是10000以下。 繼而’對以上述通式(8)所表示之環狀矽氧烷化合物進 行說明。 於上述通式(8)中,R25、R26&R27表示可相同亦可不同 之碳數1〜6之烷基、碳數5〜6之環烷基或苯基,G表示具有 縮水甘油基之基。作為碳數丨〜6之烷基及碳數5〜6之環烷 基,可列舉以R15、R〗6及Rn所列舉之烷基及環烷基。 就容易製造之方面而言,R25較好的是碳數卜6之烷基, 進而較好的是甲基及乙基,最好的是甲基。又,就本發日月 _ 之永久抗蝕劑之耐熱性方面而言,R26及R27較好的是甲 基、乙基及苯基,進而較好的是曱基及苯基,最好的是曱 基。 X表不2〜6之數,y表示x+y成為3〜6的〇〜4之數。就工業上 容易獲得之方面而言,x+y較好的是4〜6,進而較好的是 4〜5,最好的是4。又,y較好的是〇。 以上述通式⑻所表示之環狀石夕氧烧化合物可藉由使含 有八有與Si Η基之反應性之碳_碳雙鍵及縮水甘油基的化❾ 合物與以上述通式(6)所表示之環狀化合物進行石夕氫化反應 而製造。 繼而’對具有縮水甘油基之烧氧基石夕烧之水解·縮合反' 應物進行說明。 . 八有縮水甘油基之烧氧基石夕院之水解縮合反應物係利 方法例如化合物1 AS或化合物1CS之水解·縮合反 應中所說明之方沐f .. a . 等,使具有縮水甘油基之烷氧基矽烷進 144043.doc -34· 201030468 行水解·縮合反應所得之化合物。 作為具有縮水甘油基之烧氧基碎烧,例如可列舉:縮水 甘油基三甲氧基矽烷、縮水甘油基三乙氧基矽烷等縮水甘 油基烷氧基矽烷化合物;2-縮水甘油氧基乙基三甲氡基石夕 燒、2-縮水甘油氧基乙基甲基二甲氧基矽烷等縮水甘油氧 基乙基院氧基碎炫•化合物,3 -縮水甘油氧基丙基三曱氧基 石夕烷、3-縮水甘油氧基丙基甲基二甲氧基矽烷、3_縮水甘 ❹ 油氧基丙基乙基二曱氧基矽烷、3-縮水甘油氧基丙基笨基 一甲氧基石夕燒、雙(3-縮水甘油氧基丙基)二曱氧基石夕烧、 3-縮水甘油氧基丙基三乙氧基石夕烧、3-縮水甘油氧基丙基 甲基二乙氧基矽烷、3-縮水甘油氧基丙基乙基二乙氧基石夕 烧、3-縮水甘油氧基丙基苯基二乙氧基矽烷、雙(3_縮水甘 油氧基丙基)二乙氧基矽烷等3_縮水甘油氧基丙基烷氧基矽 烧化合物;2-(4-縮水甘油氧基苯基)乙基三甲氧基碎烧、 2-(4-縮水甘油氧基苯基)乙基三乙氧基石夕烧等2_(4_縮水甘 _ ’由氧基笨基)乙基院氧基石夕烧化合物;5-(縮水甘油氧基甲 基)降钟伯基二甲氧基石夕烧、6-(縮水甘油氧基曱基)降艸伯 基二甲氧基矽烷等縮水甘油氧基甲基降艸伯基烷氧基矽烷 •化合物等。 於該等化合物中,就水解.縮合反應之反應性及工業上 獲传之容易程度而言,較好的是3-縮水甘油氧基丙基烷氧 基矽烷化合物。於3_縮水甘油氧基丙基烷氧基矽烷化合物 中,進而較好的是3·縮水甘油氧基丙基三甲氧基矽烷、3_ 縮水甘油氧基丙基甲基二曱氧基矽烷、雙(3-縮水甘油氧基 144043.doc -35· 201030468 丙基)二甲氧基矽烷、3'缩水甘油氧基丙基三乙氧基矽烷, 進而較好的是3-縮水甘油氧基丙基三甲氧基石夕烧、%縮水 甘油氧基丙基三乙氧基石夕燒,最好的是3'缩水甘油氧基丙 基三曱氧基矽烷。 於製造具有縮水甘油基之燒氧基石夕燒之水解.縮合反應 . 物之情形時’除了具有縮水甘油基之烷氧基矽烷以外,亦 可併用不具有縮水甘油基之其他烧氧基石夕烧化合物。作為 上述其他烷氧基矽烷化合物,可列舉於上述導入矽醇基之 方法或提高石夕醇基含量之方法中,作為其他三烧氧基石夕燒 _ 或二烷氧基矽烷所例示之化合物。 具有縮水甘油基之烷氧基矽烷之水解.縮合反應物之分 子中的環氧基之比例過少_ ’存在交聯效果較少,本發明 之永久抗蝕劑之物性降低之情形,故環氧當量較好的是 1000以下,進而較好的是700以下,最好的是35〇以下。 具有縮水甘油基之烷氧基矽烷之水解縮合反應物之分 子置並無特別限定,但過大時,存在對鹼性顯影液之溶解 佳或刀散性降低,於驗性顯影後之基板表面殘留抗蚀劑殘 © 渣之情形,故質量平均分子量較好的是20000以下,進而 較好的是15000以下,最好的是10000以下。 具有縮水甘油基之烷氧基矽烷之水解.縮合反應物較好 的是具有矽醇基。具有縮水甘油基之烷氧基矽烷之水解· 縮合反應物中之矽醇基之含量較好的是丨〜儿質量%,進而 較好的是3〜2 5質量%。 將二烷氧基矽烷化合物用於反應的具有縮水甘油基之烷 144043.doc •36- 201030468 氧基石夕院之水解.縮合反應物存在具有由Si-0-Si鍵所引起 之父聯結構之情形,亦存在由於該交聯結構而成為例如梯 狀(ladder狀)、籠狀、環狀等結構之情形。將具有縮水甘 油基之三烷氧基矽烷化合物及其他三烷氧基矽烷化合物用 於反應中的具有縮水甘油基之烷氧基矽烷之水解·縮合反 應物例如可以下述通式(9)表示: [化 12] ⑩ [G-SiO瞻叫丨卜⑽攀⑽丄⑻ (式中,G表示具有縮水甘油基之基,R28表示可相同亦可 不同之碳數1〜10之烷基或苯基,i表示2以上之數,k表示〇 或1以上之數,h表示〇〜2之數,』表示〇〜2之數。其中, hxi+jxk 不超過 h+i+2)。 於上述通式(9)中,G表示具有縮水甘油基之基,R28表 示可相同亦可不同之碳數i〜1〇之烷基或苯基。就耐熱性方 面而言,R28較好的是曱基、乙基及苯基,進而較好的是 甲基及苯基’最好的是甲基。 i表示2以上之數,k表示〇或1以上之數,h表示〇〜2之 數。hxi+jxk表示分子中之矽醇基之合計量,但其個數不 超過h+i+2。 上述通式(9)之前半部分 [化 13] {6_Si0(3>w/2<0H)hj 丨 係源自具有縮水甘油基之三烷氧基矽烷化合物之部分,上 144043.doc -37- 201030468 述通式(9)之後半部分 [化 14] [RLSiO㈣觸丄 係源自其他三烷氧基矽烷化合物之部分。 ,相對於 水甘油基 進而較好 就高溫熱歷程後之耐化學品性提高之方面而言 (A)矽氧樹脂100質量份,作為(B)成分之具有縮 之矽氧烷化合物之含量較好的是卜丨⑻質量份, 的疋3〜50質量份’最好的是5〜2〇質量份。 繼而,對作為本發明之(C)成分之重氮萘醌類進行 明。 。 作為可用於本發明之重氮萘醌類,若為已知可用於感光 性材料之重氮萘醌類化合物,則並無特別限定,其中較好 的是具有酚性羥基之化合物之氫原子經下述式(1〇) [化 15](wherein R25, R26 and R represent an alkyl group which may be the same or different carbon number, a cycloalkyl group having a carbon number of 5 to 6 or a phenyl group, G represents a group having a glycidyl group, and X represents a group of 2 to 6 The number y represents the number of 〇~4 in which x + y is 3 to 6). The cyclic oxirane compound represented by the above, and the hydrolysis 'condensation reaction product of the alkoxy decane having a glycidyl group. First, the linear oxy-oxygen compound represented by the above formula (7) will be described. In the above formula (7), γ represents a group having a glycidyl group or a fluorenyl group, and G represents a group having a glycidyl group, and represents a fluorenyl group or a phenyl group which may be the same or different, and R, R23 and R24 represent The same or different alkyl groups having 1 to 6 carbon atoms, cycloalkyl groups having 5 to 6 carbon atoms or phenyl groups. In terms of ease of manufacture, R21 is preferably a methyl group. Examples of the alkyl group having 1 to 6 carbon atoms and the cycloalkyl group having 5 to 6 carbon atoms include R15 and the exemplified groups. In terms of ease of manufacture, R22 is preferably fluorenyl and 144043.doc • 32- 201030468 ethyl, and more preferably methyl. With respect to the heat resistance of the permanent resist of the present invention, 5, R 3 and r 24 are preferably a methyl group, an ethyl group and a phenyl group, and further preferably a methyl group and a stupid group, and most preferably a methyl group. X represents no hydrogen atom or sulfhydryl group. U represents the number of bbs. 'W represents the number of 〇~1000'. When u is 0 or 1, X represents a hydrogen atom. The linear oxysulfide compound represented by the general formula (7) can be obtained by the above formula (by using a ruthenium ruthenium containing a carbon-carbon double bond having a reactivity with a Si_H group and a glycidyl group) 5) The linear compound shown is produced by a hydrogenation reaction of 9. 'Compounds containing a carbon-carbon double bond and a glycidyl group having reactivity with a Si_H group' include, for example, vinyl glycidol, propyl glycidyl hydrazide, and 5-glycidoxypropyl _2 (IV) Among the primary olefins and the like, it is preferred that propylene propyl glycidin is used in terms of ease of industrial availability and reactivity with dream hydrogenation. When the ratio of the epoxy group in the molecule of the material is too small, the effect of the cross-linking in the molecule is less, and the physical properties of the permanent resist of the present invention are lowered, so the formula () The epoxy equivalent of the linear siloxane compound is preferably hereinafter preferably more than 700, and most preferably 350 or less. Furthermore, 喟^ "月衣巩篁, refers to the value obtained by dividing the molecular weight by the number of decyl groups, that is, the molecular weight corresponding to one ring rolling base. The molecular weight of the linear peptide-like oxyalkylene compound represented by the above formula (7) is particularly limited, but when it is too large, the solubility or the dispersibility of the alkaline developer is lowered. In the case of in-situ development, the residual resist residue remains on the surface of the substrate after the nozzle is applied. Therefore, the mass average molecular weight is preferably 20,000 or less, and is preferably 144043.doc • 33· 201030468 and preferably 15,000 or less. The best is below 10,000. Then, the cyclic siloxane compound represented by the above formula (8) will be described. In the above formula (8), R25, R26 and R27 represent an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 5 to 6 carbon atoms or a phenyl group which may be the same or different, and G represents a glycidyl group. base. Examples of the alkyl group having a carbon number of 66 and the cycloalkyl group having 5 to 6 carbon atoms include an alkyl group and a cycloalkyl group exemplified by R15, R and 6 and Rn. In terms of ease of manufacture, R25 is preferably an alkyl group having a carbon number of 6, and more preferably a methyl group and an ethyl group, and most preferably a methyl group. Further, in terms of the heat resistance of the permanent resist of the present invention, R26 and R27 are preferably a methyl group, an ethyl group and a phenyl group, and more preferably a mercapto group and a phenyl group, and the most preferable. It is 曱基. The X table does not have a number of 2 to 6, and y indicates that x + y becomes 3 to 6 〇 ~ 4 number. In terms of industrially readily available, x + y is preferably 4 to 6, more preferably 4 to 5, and most preferably 4. Also, y is better. The cyclic oxime oxy-compound compound represented by the above formula (8) can be obtained by the above formula (2) by using a ruthenium complex having a carbon-carbon double bond and a glycidyl group having reactivity with an osmium group. 6) The cyclic compound shown is produced by a hydrogenation reaction. Next, the hydrolysis/condensation reaction of the alkoxylate having a glycidyl group will be described. . The hydrolysis-condensation reaction method of the ethoxylated group of the ethoxylated ethoxylates, for example, the compound described in the hydrolysis/condensation reaction of the compound 1 AS or the compound 1CS, has a glycidyl group. The alkoxy decane is introduced into 144043.doc -34· 201030468. The compound obtained by the hydrolysis/condensation reaction. Examples of the activating oxyalkyl group having a glycidyl group include glycidyl alkoxy decane compounds such as glycidyl trimethoxy decane and glycidyl triethoxy decane; and 2-glycidoxyethyl group; Triglycidyl sulphate, 2-glycidoxyethylmethyldimethoxydecane, etc., glycidyloxyethyl oxalate, compound, 3-glycidoxypropyltrimethoxy oxetane , 3-glycidoxypropylmethyldimethoxydecane, 3-glycolate, oxypropylethyldimethoxyoxydecane, 3-glycidoxypropyl stupyl-methoxyxide Calcined, bis(3-glycidoxypropyl) decyloxycarbazide, 3-glycidoxypropyltriethoxy sulphur, 3-glycidoxypropylmethyldiethoxydecane , 3-glycidoxypropylethyldiethoxylate, 3-glycidoxypropylphenyldiethoxydecane, bis(3-glycidoxypropyl)diethoxydecane 3_glycidoxypropyl alkoxy oxime compound; 2-(4-glycidoxyphenyl)ethyltrimethoxy chopped 2-(4-glycidoxyphenyl)ethyltriethoxy oxalate, etc. 2_(4_glycidyl _ 'from oxyphenyl)ethyl oxalate compound; 5-(glycidol) Oxymethyl) thiol-dimethoxy zeoxime, 6-(glycidyloxy fluorenyl) thiol-dimethoxy decane, etc. glycidyloxymethylnorbornyl alkoxy oxane Wait. Among these compounds, a 3-glycidoxypropyl alkoxydecane compound is preferred in terms of the reactivity of the hydrolysis, the condensation reaction, and the ease of industrial transfer. Among the 3 - glycidoxypropyl alkoxy decane compounds, more preferably 3 · glycidoxypropyl trimethoxy decane, 3 - glycidoxypropyl methyl decyloxy decane, double (3-glycidyloxy 144043.doc -35· 201030468 propyl)dimethoxydecane, 3' glycidoxypropyltriethoxydecane, and more preferably 3-glycidoxypropyl Trimethoxy zeoxime, % glycidoxypropyl triethoxy zeoxime, and most preferred is 3' glycidoxypropyl trimethoxy decane. In the case of producing a glycidyl group having a glycidyl group, hydrolysis or condensation reaction. In the case of the product, in addition to the alkoxy decane having a glycidyl group, other anthracene oxides having no glycidyl group may be used in combination. Compound. The other alkoxydecane compound may be exemplified as the other exemplified by the method of introducing a sterol group or the method of increasing the content of the linalool group, and the other three alkoxylates or a dialkoxy decane. Hydrolysis of glycidyl group-containing alkoxy decane. The proportion of epoxy groups in the molecule of the condensation reactant is too small _ 'There is less crosslinking effect, and the physical properties of the permanent resist of the present invention are lowered, so epoxy The equivalent is preferably 1,000 or less, more preferably 700 or less, and most preferably 35 or less. The molecular group of the hydrolysis-condensation reaction product of the glycidyl group-containing alkoxysilane is not particularly limited, but when it is too large, the dissolution of the alkaline developer is good or the knife-off property is lowered, and the surface of the substrate after the development is inspected. In the case where the resist remains as a slag, the mass average molecular weight is preferably 20,000 or less, more preferably 15,000 or less, and most preferably 10,000 or less. Hydrolysis of a glycidyl group having a glycidyl group. The condensation reactant preferably has a decyl group. The content of the sterol group in the hydrolysis/condensation reaction of the alkoxysilane having a glycidyl group is preferably 丨% by mass, more preferably 3 to 5% by mass. A glycidyl group-containing alkane having a dialkoxy decane compound for use in the reaction 144043.doc • 36- 201030468 Hydrolysis of a oxetium. The condensation reactant is present in a parent-linked structure caused by a Si-0-Si bond. In some cases, there are cases in which, for example, a ladder-like shape, a cage shape, a ring shape, or the like is formed due to the crosslinked structure. The hydrolysis/condensation reaction product of the glycidyl group-containing alkoxysilane having a glycidyl group-containing trialkoxy decane compound and another trialkoxy decane compound can be represented, for example, by the following formula (9). : [Chemical 12] 10 [G-SiOXi 丨 丨 ( (10) 攀 (10) 丄 (8) (wherein G represents a glycidyl group, and R28 represents an alkyl or benzene having the same or different carbon number of 1 to 10 Base, i represents a number of 2 or more, k represents 〇 or a number of 1 or more, h represents the number of 〇~2, and 』 represents the number of 〇~2, where hxi+jxk does not exceed h+i+2). In the above formula (9), G represents a group having a glycidyl group, and R28 represents an alkyl group or a phenyl group which may be the same or different in carbon number i to 1 Å. In terms of heat resistance, R28 is preferably a mercapto group, an ethyl group and a phenyl group, and further preferably a methyl group and a phenyl group are most preferably a methyl group. i represents a number of 2 or more, k represents 〇 or a number of 1 or more, and h represents the number of 〇~2. Hxi+jxk represents the total amount of sterol groups in the molecule, but the number does not exceed h+i+2. The first half of the above formula (9) [Chemical 13] {6_Si0(3>w/2<0H)hj is derived from a moiety having a glycidyl group of a trialkoxy decane compound, 144043.doc -37- 201030468 The latter part of the general formula (9) [Chem. 14] [RLSiO (tetra) contact system is derived from the other trialkyloxydecane compound. With respect to the glycerol group, it is preferred that the chemical resistance after the high temperature heat history is improved (A) 100 parts by mass of the oxime resin, and the content of the reduced siloxane compound as the component (B) Preferably, the dip is (8) parts by mass, and the 疋3 to 50 parts by mass is preferably 5 to 2 parts by mass. Next, the diazonaphthoquinones which are the components (C) of the present invention will be described. . The diazonaphthoquinone which can be used in the present invention is not particularly limited as long as it is a diazonaphthoquinone compound which is known to be used for a photosensitive material, and among them, a hydrogen atom having a phenolic hydroxyl group is preferred. The following formula (1〇) [Chem. 15]

所取代之化合物(4-重氮萘酿續酸酯)或經下述式(u) [化 16]Substituted compound (4-diazonaphthalene styrene) or by the following formula (u) [Chem. 16]

所取代之化合物(5-重氮萘醌磺酸酯)。 144043.doc • 38 - 201030468 作為上述重氮萘醌類之較佳具體例,例如可例示以下之 式(12)〜(17)所表示之化合物及該等之位置異構物等。 [化 17]Substituted compound (5-diazonaphthoquinone sulfonate). 144043.doc • 38 - 201030468 As a preferable specific example of the diazonaphthoquinones, for example, the compounds represented by the following formulas (12) to (17), the positional isomers, and the like can be exemplified. [Chem. 17]

0-Q (式中,Q為以上述式(10)或式(11)所表示之基或氫原子, ® 且不全部為氫原子。) [化 18]0-Q (wherein Q is a group represented by the above formula (10) or formula (11) or a hydrogen atom, and not all of them are hydrogen atoms.) [Chem. 18]

(13〉 (式中,Q為以上述式(10)或式⑴ 且不全部為氣原子。) 所表不之基或氮原子(13) (wherein Q is a formula (10) or a formula (1) and not all of them are a gas atom.) A base or a nitrogen atom

Ub 19]Ub 19]

(1 4) (式中’⑽以上述式(Η))或式( 且不全部為氫原子。) 表不之基或氫原子, [化 20] 144043.doc -39. 201030468(1 4) (wherein '(10) is in the above formula (Η)) or a formula (and not all of them are a hydrogen atom). A base or a hydrogen atom, [Chem. 20] 144043.doc -39. 201030468

(1 5> (式中,Q炎、 表示之基或氫原子 為以上述式(10)或式(U)所 且不全部為氫原子。) [化 21](1 5 > (wherein Q inflammation, a group or a hydrogen atom is represented by the above formula (10) or formula (U) and not all of them are hydrogen atoms.) [Chem. 21]

(1 6) 示之基或氫原子 弋中Q為以上述式(10)或式(11)戶斤表 且不全部為氫原子。) [化 22] q.0〇-C~^-0-Q (17) QO 〇-〇 (式中,Q為以上述式(10)或式⑴)所表示之基或氯原子, 且不全部為氫原子。) 以式(10)所表示之基在丨線(波長為365 nm)區域具有吸 收故適於1線曝光,以式(11)所表示之基在較廣範圍之波 長區域存在吸收,故適於較廣範圍之波長下之曝光,因此 較好的是根據曝光之波長而選擇以式(1〇)所表示之基、以 式(11)所表示之基中之任一者。 就本發明之永久抗姓劑之顯影性、微細加工性方面而 言’較好的是相對於(A)矽氧樹脂100質量份,作為(C)成 分之重氮萘醌類之含量為〇1〜1〇賀量份,較好的是1〜5質 144043.doc 201030468 繼而’對作為本發明之(D)成分之有機溶劑進行說明。 可用於本發明之(D)有機溶劑若為可溶解或分散上述 夕氧樹月日(B)具有縮水甘油醚基之石夕氧烧化合物、 重氮萘酿類之有機溶劑,則並無特別限定,較好的是可於(1 6) The base or hydrogen atom 弋 Q is in the above formula (10) or formula (11) and is not all hydrogen atoms. q.0〇-C~^-0-Q (17) QO 〇-〇 (wherein Q is a group represented by the above formula (10) or formula (1)) or a chlorine atom, and All are hydrogen atoms. The base represented by the formula (10) has absorption in the region of the 丨 line (wavelength of 365 nm) and is suitable for 1-line exposure, and the base represented by the formula (11) has absorption in a wide range of wavelength regions, so For exposure at a wide range of wavelengths, it is preferred to select one of the groups represented by the formula (1) and the group represented by the formula (11) depending on the wavelength of the exposure. In terms of developability and fine workability of the permanent anti-surname agent of the present invention, it is preferable that the content of the diazonaphthoquinone as the component (C) is 相对 with respect to 100 parts by mass of the (A) oxime resin. 1 to 1 〇 份 份, preferably 1 to 5 144043.doc 201030468 Next, the organic solvent which is the component (D) of the present invention will be described. The (D) organic solvent which can be used in the present invention is not particularly soluble in the organic solvent which can dissolve or disperse the above-mentioned Oxygen Tree Moon Day (B) having a glycidyl ether group, and the diazo naphthalene brewing type. Limited, it is better to

25C下溶解lf4%以上之水的有機溶劑,作為上述有機 溶劑’除了保護基第三丁基之脫離之說明中所例示之 溶劑以外,亦可列舉:γ_丁内醋、γ_戊内醋、s_戊内酉旨、 碳酸乙二酯、碳酸丙二酯、碳酸二甲酯等。 於使用以上述通式⑴所表示之基中之缓基或以上述通 式(2)所表示之基中之紛性經基經保護之化合物,例如以上 述通式(3a)所表示之環狀矽氧烷化合物之情形時,可將第 二丁基之脫離反應中所使用之有機溶劑直接用作本發明之 (D)成分之有機溶劑。 就使用本發明之正型感光性組合物形成永久抗蝕劑時之 形成性及所得之永久抗蝕劑之物性等方面而言,較好的是 相對於(A)矽氧樹脂1〇〇質量份,作為(D)成分之有機溶劑 之含1為10〜10000質量份,更好的是⑺卜丨〇〇〇質量份。 本發明之正型感光性組合物係使(A)矽氧樹脂、(B)具有 縮水甘油_基之石夕氧烷化合物、(c)重氮萘醌類及(D)有機 溶劑溶解或分散者,亦可視需要例如利用孔徑為〇 2叫^左 右之過濾器進行過濾後,再供於使用。 本發明之正型感光性組合物除此以外,可視需要調配塑 化劑、觸變性賦予劑、光酸產生劑、熱酸產生劑、分散 144043.doc 41 201030468 劑、消泡劑、顏料、染料等。 繼而,對本發明之永久抗㈣進行說明。本發明之永久 抗蝕劑係使用上述正型感光性組合物而製作。以下,按步 驟順序對本發明之永久抗㈣j之較佳製造方法之-例崎 說明。 (第1步驟)塗膜形成步驟 塗膜形成步驟係將所製備之本發明之正型感光性組合物 塗佈於作為對象之基材上而形成塗膜之步驟。作為對象之 基材若為具有對正型感光性組合物中之有機溶劑等之耐化 學品性、以及對第4步驟之藉由驗性溶液之顯影及第6步驟 之處理㈣熱性等之材料,則並無特別限定,可列舉玻 璃、金屬、半導體等。尤其可列舉需要作為絕緣層之永久 抗蝕劑的液晶顯示器之TFT表面等作為較佳者。 法 法 塗佈之方法並無特別限 、刀片塗佈法、報塗法、 定,例如可利用旋塗法、浸塗 噴塗法、狹縫塗佈法等各種方 其後,為了自由塗佈於上述基材上之塗佈物所形成之正 型感光性組合物層中除去(D)有機溶劑,而進行預烘烤 (pre-bake)。經預烘烤之正型感光性組合物層對驗性容液 具有難溶性,於下-曝光步驟中,藉由照射光而使經光照 射之部分(以下,有時稱作曝光部分)成為鹼溶性。 預烘烤之溫度係根據所使用之有機溶劑之種類而不同, 若溫度過低,則存在有機溶劑之殘留分變多,而成為曝光 感光度或解像度降低原因之情形,又,若溫度過高,則存 144043.doc 42- 201030468 在藉由預烘烤而進行塗膜整體之硬化,經光照射之部分對 鹼性顯影液之溶解性降低,結果曝光感光度或解像度降低 之情形,故較好的是60〜14(rc,進而較好的是7〇〜12〇1。 預供烤之時間係根據所使用之有機溶劑之種類與·預洪烤之 溫度而不同,較好的是3〇秒鐘〜1〇分鐘,進而較好的是丨〜5 分鐘。 亦可於將本發明之正型感光性組合物塗佈於作為對象之 基材上後,直接進行預烘烤,但就本發明之永久抗触劑之 咼熱歷程後之物性、耐化學品性等提高之方面而言,較好An organic solvent in which lf 4% or more of water is dissolved at 25 C, and as the solvent exemplified in the description of the removal of the protective group of the third butyl group, the γ-butyrolactone and the γ-pental vinegar may be mentioned. , s_ 戊内酉, ethylene carbonate, propylene carbonate, dimethyl carbonate, and the like. a compound which is protected by a group represented by the above formula (1) or a compound which is protected by a group represented by the above formula (2), for example, a ring represented by the above formula (3a) In the case of a cyclooxyalkylene compound, the organic solvent used in the desorption reaction of the second butyl group can be directly used as the organic solvent of the component (D) of the present invention. With regard to the formability when forming a permanent resist using the positive photosensitive composition of the present invention and the physical properties of the obtained permanent resist, it is preferred that the quality is relative to (A) oxime resin. The content of the organic solvent as the component (D) is 10 to 10,000 parts by mass, more preferably (7) by weight. The positive photosensitive composition of the present invention dissolves or disperses (A) an oxirane resin, (B) a glycidyl group-based oxalyl compound, (c) a diazonaphthoquinone, and (D) an organic solvent. Alternatively, it may be filtered by a filter having a hole diameter of about 2, for example, and then used for use. In addition to the positive photosensitive composition of the present invention, a plasticizer, a thixotropic imparting agent, a photoacid generator, a thermal acid generator, a dispersion 144043.doc 41 201030468, an antifoaming agent, a pigment, a dye may be blended as needed. Wait. Next, the permanent resistance (four) of the present invention will be described. The permanent resist of the present invention is produced by using the above positive photosensitive composition. Hereinafter, the preferred manufacturing method of the permanent anti-(4) j of the present invention will be described in the order of steps. (First Step) Coating Film Forming Step The coating film forming step is a step of applying the prepared positive photosensitive composition of the present invention onto a target substrate to form a coating film. The substrate to be used is a material having chemical resistance to an organic solvent or the like in the positive photosensitive composition, and development of the test solution in the fourth step and treatment of the sixth step (IV) heat and the like. Further, it is not particularly limited, and examples thereof include glass, metal, and semiconductor. In particular, a TFT surface or the like of a liquid crystal display which is required as a permanent resist of an insulating layer is preferable. The method of coating by the method is not particularly limited, and the blade coating method, the coating method, and the coating method may be, for example, a spin coating method, a dip coating method, a slit coating method, or the like, and then, for free application. The (D) organic solvent is removed from the positive photosensitive composition layer formed on the substrate by the coating material, and pre-bake is performed. The pre-baked positive photosensitive composition layer is insoluble in the test solution, and in the lower-exposure step, the portion irradiated with light (hereinafter sometimes referred to as an exposed portion) becomes Alkali soluble. The pre-baking temperature varies depending on the type of the organic solvent to be used. If the temperature is too low, there is a large residual variation of the organic solvent, which causes a decrease in exposure sensitivity or resolution, and if the temperature is too high. , 144043.doc 42- 201030468 The entire coating film is hardened by prebaking, and the solubility of the portion irradiated with light to the alkaline developing solution is lowered, and as a result, the exposure sensitivity or the resolution is lowered, so that Preferably, it is 60 to 14 (rc, and more preferably 7 to 12 〇 1. The pre-bake time varies depending on the type of organic solvent used and the temperature of the pre-boiled, preferably 3 〇 seconds to 1 minute, and more preferably 丨 to 5 minutes. The positive photosensitive composition of the present invention may be directly pre-baked after being applied to a target substrate. The permanent anti-contact agent of the present invention is preferably improved in terms of physical properties, chemical resistance, etc. after the thermal history.

的是於預烘烤之前,於室溫〜未達6旳之溫度、常壓或減 墨下,以使正型感光性組合物層中之有機溶劑之濃度成為 5質量%以下之方式使有機溶劑揮發後,再進行預烘烤。 預烘烤後之正型感光性組合物層之厚度係根據本發明之 永久抗㈣所使用之用途而不同,但並無特別限定,為 〇·1 μπι〜100 μπι,較好的是〇 3 μιη〜1〇 μηι即可。 (第2步驟)曝光步驟 曝光步驟係對經預供烤之正型感光性組合物層照射經圖 案化之光’而提高曝光部分之驗溶性的步驟。經預供烤之 正型感光性組合物層對鹼性溶液具有難溶性,但藉由光昭 射而使曝光部分之重氮蔡醒類分解,變成節甲冑,9從而 溶解、分散於驗性溶液_。 照射光並無特別限定,若為可提高經預烘烤之正型感光 性組合物層之光照射部之驗溶性的能量之光即可,例如為 10〜lOOOmJ/cm2’ 較好的是 4〇〜3〇〇mJ/cm2。 ” 144043.doc •43- 201030468 又’照射光之波長可為可見光’亦可為紫外光,並無特 別限定’使用高壓水銀燈、超高壓水银燈等,於使用4_重 氮秦酿績酸s旨類作為(c)重氮萘醒類之情形時照射以i線 (365 nm)為主體之窄波長之光即可’於使用5•重氮萘酿續 酸酯類作為(c)重氮萘醌類之情形時,照射包括丨線(365 nm)、h線(4〇5 nm)及g線(436 nm)之寬波長之光即可。 上述照射光之圖案化之方法並無特別限定,可為先前已The organic solvent in the positive photosensitive composition layer is made 5% by mass or less at room temperature to below 6 Torr, at normal temperature or under reduced ink, before the pre-baking, so that the organic solvent concentration in the positive photosensitive composition layer is 5% by mass or less. After the solvent is volatilized, pre-baking is performed. The thickness of the positive photosensitive composition layer after prebaking differs depending on the use of the permanent anti-(four) of the present invention, but is not particularly limited and is 〇1 μπι to 100 μπι, preferably 〇3. Ιιη~1〇μηι can be. (Second Step) Exposure Step The exposure step is a step of increasing the solubility of the exposed portion by irradiating the patterned photosensitive composition layer with the pre-baked positive photosensitive composition layer. The pre-baked positive-type photosensitive composition layer is insoluble in an alkaline solution, but the diazepam of the exposed portion is decomposed by the light emission to become a methylation, 9 to be dissolved and dispersed in the test solution. _. The irradiation light is not particularly limited, and may be light having an energy for improving the solubility of the light-irradiating portion of the pre-baked positive photosensitive composition layer, and is, for example, 10 to 100 mJ/cm 2 '. 〇~3〇〇mJ/cm2. 144043.doc •43- 201030468 And 'the wavelength of the light can be visible light' can also be ultraviolet light, there is no special limit 'use high pressure mercury lamp, ultra high pressure mercury lamp, etc., use 4_diazoxine acid s In the case of (c) diazonaphthalene awakening, the narrow-wavelength light with i-line (365 nm) as the main body can be used as the (c) diazo. In the case of naphthoquinones, it is sufficient to irradiate light of a wide wavelength including a ray line (365 nm), an h line (4 〇 5 nm), and a g line (436 nm). The method of patterning the above illuminating light is not particularly limited. Limited, can be previously

知之方法,例如經由光罩等之光照射方法,亦可為使用雷 射光之選擇性光照射方法。 (第3步驟)顯影步驟 顯影步驟係藉由使用顯影液除去曝光步驟中經光照射市 驗溶性提高之部分,從而獲得特定之圖案的步驟。 作為顯影方法,例如可击 巧划』使用淺灘式顯影法、浸潰法', 淋法、噴霧法等中之任—方法。 ,影時間絲據⑷”樹脂峰)具有縮水甘油醚基之A known method, for example, a light irradiation method using a mask or the like, may be a selective light irradiation method using laser light. (Step 3) Developing Step The developing step is a step of obtaining a specific pattern by removing the portion of the exposure step which is improved by the light irradiation in the exposure step by using a developing solution. As the developing method, for example, a method such as a shoal development method, a dipping method, a shower method, a spray method, or the like can be used. , shadow time silk according to (4) "resin peak" has a glycidyl ether group

合物之種類及分子量、顯影液之溫度等而不同, 通常為30〜18〇秒鐘。 顯影步驟中所使用之 勒仏.A丄 顯影液右為可將曝光部分溶解或矣 散於液中而除去者,則 則並無特別限定,例如可使用:氫挛 化鈉、虱氧化鉀、碳酸 *5 . - ^ 鈉、妷酸鉀、矽酸鈉、氨等無機起 ,乙胺、正丙胺等—绍 胺類級胺類;二乙胺、二正丙胺等二紹 职頌,二甲胺、甲基二 胺類;-甲美,硝 、二曱基乙胺、三乙胺等三紹 只,一〒基乙醇胺、甲 τ丞二乙醇胺、三乙醇胺等三級相 醇胺類,吡咯、哌啶 t …甲基哌啶、N-甲基吡咯啶、1,8 144043.doc -44- 201030468 氮雜雙環[5.4.〇]-7-十一烯、1,5_二氮雜雙環[4 3 〇]_5-壬 烤Γ等環2 狀二級胺類;吡咬、三甲基吡咬、二甲基0比。定、喹 啉等芳香族三級胺類;以及四甲基氫氧化銨、四乙基氫氧 b銨等四級銨鹽之水溶液等鹼類之水溶液,其濃度較好的 疋先則之正型感光性組合物層之除去中所使用之顯影液之 鹼濃度。該等鹼類之水溶液亦可進而含有適量之曱醇、乙 醇等水/谷性有機溶劑及/或界面活性劑。 φ 利用顯影液除去曝光部分後,較好的是藉由流水或噴淋 而以水進行沖洗,亦可視需要於50〜120°C之範圍内使其脫 水乾燥。 (第4步驟)漂白曝光步驟 漂白曝光步驟係對鹼溶液處理中所殘存之正型感光性組 合物層(以下有時稱作抗蝕層)之整體照射光,而提高可見 光穿透性的步驟。 抗姓層由於含有重氮萘醌類,故著色為淡黃色或淡褐 ❹ 色。藉由對抗蝕層照射光,殘存之未反應之(C)重氮萘醌 類產生光分解,變成於可見光區域無吸收之茚甲酸,可見 光穿透性提高,適合於用作液晶顯示裝置、有機EL顯示裝 • 置等中所使用之主動矩陣基板用之永久抗蝕劑。 • 漂白曝光步驟中之照射光並無特別限定,例如照射 10〜1000 mJ/cm2、較好的是40〜600 mj/cm2之光即可。又, 照射光之波長可為可見光,亦可為紫外光,並無特別限 定,但較好的是與(第2步驟)曝光步驟同樣地,根據所使用 之(C)重氮萘醌類而選擇照射光之波長。 144043.doc •45· 201030468 (第5步驟)後烘烤步驟 ▲經漂白曝光之抗蝕層之可見光穿透性提高,鹼溶性亦提 南。後烘烤步懸對上述經漂自曝光之抗餘層進行nc 以上之熱處理’使抗㈣中之梦氧樹脂進行熱交聯,從而 賦予永久抗姓劑所要求之耐熱性、耐化學品性、 化性者。 一般認為,於本發明中,作為正型感光性組合物之⑺) 成分之具有縮水甘㈣基之石夕氧院化合物係發揮交聯劑之 功能而獲得迄今為止未有之高熱歷程後之耐化學品性者。 後烘烤較好的是於氮、1、氬等惰性氣體環境下,於The type and molecular weight of the compound, the temperature of the developer, and the like are usually 30 to 18 seconds. The extracting agent used in the developing step is not particularly limited as long as it can be dissolved or dispersed in the liquid to be removed from the liquid, and for example, sodium hydroquinone or potassium strontium oxide can be used. Carbonic acid*5 . - ^ Sodium, potassium citrate, sodium citrate, ammonia, etc., ethylamine, n-propylamine, etc. - sulphamine-like amines; diethylamine, di-n-propylamine, etc. Amine, methyl diamine; - carbamide, nitrate, dimercaptoethylamine, triethylamine, etc., trisyl alcohol, aziridine diethanolamine, triethanolamine and other tertiary alcohol amines, pyrrole , piperidine t ... methyl piperidine, N-methyl pyrrolidine, 1,8 144043.doc -44- 201030468 azabicyclo[5.4.〇]-7-undecene, 1,5-diazabicyclo [4 3 〇]_5- 壬 roasted Γ and other ring-like secondary amines; pyridine bite, trimethyl pyridine bite, dimethyl 0 ratio. An aromatic tertiary amine such as a quinoline or a quinoline; and an aqueous solution of an alkali such as an aqueous solution of a tetra-ammonium salt such as tetramethylammonium hydroxide or tetraethylammonium hydroxide b-ammonium; The alkali concentration of the developer used in the removal of the photosensitive composition layer. The aqueous solution of the base may further contain an appropriate amount of a water/gluten organic solvent such as decyl alcohol or ethanol and/or a surfactant. φ After removing the exposed portion by the developing solution, it is preferred to rinse with water by running water or spraying, or it may be dehydrated and dried in the range of 50 to 120 °C as needed. (Step 4) Bleaching and Exposure Step The bleaching and exposing step is a step of irradiating light to the entire positive photosensitive composition layer (hereinafter sometimes referred to as a resist layer) remaining in the alkali solution treatment to improve visible light transmittance. . The anti-surname layer is colored yellowish or light brown because it contains diazonaphthoquinones. By irradiating the resist layer with light, the remaining unreacted (C) diazonaphthoquinones are photodecomposed, and become antimony formic acid which is not absorbed in the visible light region, and has improved visible light transmittance, and is suitable for use as a liquid crystal display device or organic The EL display is used as a permanent resist for active matrix substrates used in mounting and the like. The irradiation light in the bleaching exposure step is not particularly limited, and for example, it is possible to irradiate light of 10 to 1000 mJ/cm2, preferably 40 to 600 mj/cm2. Further, the wavelength of the irradiation light may be visible light or ultraviolet light, and is not particularly limited, but it is preferably the same as the (second step) exposure step, depending on the (C) diazonaphthoquinone used. Select the wavelength of the illumination light. 144043.doc •45· 201030468 (Step 5) Post-baking step ▲The visible light penetration of the bleach-exposed resist layer is improved, and the alkali solubility is also improved. The post-baking step suspends the above-mentioned bleached self-exposure resistant layer to a heat treatment of nc or more to thermally crosslink the anti-(4) dream oxygen resin, thereby imparting heat resistance and chemical resistance required for the permanent anti-surname agent. And the person. In the present invention, it is considered that the compound having a glycidyl group as the component (7)) of the positive photosensitive composition exhibits the function of a crosslinking agent and is resistant to a high heat history which has not been hitherto. Chemically. Post-baking is preferably carried out under an inert gas atmosphere such as nitrogen or argon.

120〜400°C之溫度下進行15分鐘〜2小時 更好的是於 120〜350°C之溫度下進行15分鐘〜2小時,進而較好的是於 200〜350 C之溫度下進行15分鐘〜2小時。 本發明之永久抗蝕劑不僅透明性、絕緣性、耐熱性、耐 化學品性優異,而且〜35()。(:左右之高溫下之熱歷程(高 熱歷程)後之透明性、絕緣性、耐化學品性亦優異,故作 為液晶顯示裝i、有機EL顯示裝置等中所使用《主動矩陣15 minutes to 2 hours at a temperature of 120 to 400 ° C. More preferably, it is carried out at a temperature of 120 to 350 ° C for 15 minutes to 2 hours, and more preferably at a temperature of 200 to 350 ° for 15 minutes. ~2 hours. The permanent resist of the present invention is excellent not only in transparency, insulation, heat resistance, and chemical resistance, but also 〜35 (). (: The heat history (high heat history) at the high temperature is excellent in transparency, insulation, and chemical resistance. Therefore, the active matrix is used as a liquid crystal display device i or an organic EL display device.

基板用之層間絕緣膜(層)或平坦化膜,尤其是其中包括以 多晶矽薄膜為活性層之TFT的主動矩陣基板用之層間絕緣 膜(層)或平坦化膜而極其有用。 本發明之永久抗蝕劑亦可用於半導體元件之層間絕緣 膜。又,亦可用於半導體元件之晶圓塗層材料(表面保護 獏、凸塊保護膜、MCM(Multi-Chip Module,多晶片模組) 層間保護膜 '接面塗層)、封裝材(密封材、黏晶材)。 144043.doc -46· 201030468 本發明之永久抗蝕劑亦可用作半導體元件、多層配線板 等之絕緣膜。作為半導體元件,可列舉:二極體、電晶 體、化合物半導體、熱敏電阻、變阻器、閘流體等分離式 半導體元件;DRAM(Dynamic Random Access Memory,動 態隨機存取記憶體)、SRAM(Static Random Access Memory,靜態隨機存取記憶體)、EPROM(Erasable Programmable Read Only Memory,可抹除可程式化唯讀記 憶體)、遮罩式R〇M(Mask Read Only Memory,遮罩式唯 讀記憶體)、EEPROM(Electrical Erasable Programmable Read Only Memory,電子可抹除可程式化唯讀記憶體)、 快閃記憶體(flash memory)等記憶元件;微處理器、 DSP(Digital Signal Processor,數位訊號處理器)、 ASIC(Application Specific Integrated Circuit,特殊應用積 體電路)等理論電路元件;MMIC(Monolithic Microwave Integrated Circuits,單晶微波積體電路)所代表之化合物半 導體等積體電路元件;混成積體電路(hybrid 1C)、發光二 極體、電荷結合元件等光電轉換元件等。又,作為多層配 線板,可列舉MCM等高密度配線板等。 實施例 以下列舉實施例,對本發明進行進一步說明,但本發明 並不限定於該等。 再者,矽醇基之含量係於吡啶溶液中使試料與三甲基氣 矽烷反應,使矽醇基變成三甲基矽烷醚基後,利用四曱基 氫氧化銨((CH3)4NOH)水溶液進行處理,使C-O-Si鍵水 144043.doc -47· 201030468 解’由反應後之重量增加率進行倒算而求出。 [(A)矽氧樹脂(a)之製造] 於曱苯300質量份中,添加2,4,68_四曱基環四矽氧烷 100質里伤、4 -乙稀基本甲酸-第三丁醋85質量份、4-第三 丁氧基苯乙烯110質量份、三甲氧基乙烯基矽烷93質量 份、及鉑-二乙烯基四甲基二矽氧烷錯合物(Karstedt觸 媒)0.0001質量份,一面攪拌,一面於6〇t下反應15小時。 於60 c下,自該反應液中減壓蒸餾除去溶劑,從而獲得 環狀矽氧烷化合物(a-1)(相當於上述通式(3a)之化合物)。 環狀石夕氧炫化合物(a-Ι)於25。(:下為黏稠之液體,於藉由 W-NMR之分析中未見源自Si_H基之氫原子的4 3〜5 〇 ppm 之波峰’藉由GPC之分析之結果,質量平均分子量為 900(理論分子量為933.1),確認源自未反應之4_乙烯基苯 曱酸-第三丁酯的峰面積比消失至0.5%以下。 繼而’於上述環狀石夕氧院化合物(a_l)之100質量份中, 添加苯基三甲氧基矽烷(相當於上述通式(4)之化合物)40質 量份、曱苯200質量份’ 一面於l〇°c下進行冰浴冷卻攪 拌,一面以30分鐘滴加5%之草酸水溶液5〇質量份。於使 系統内溫度保持於1 〇°C之狀態下攪拌15小時後,於50。(:、 減壓下進行回流脫水·脫醇處理,於50°C、減壓下,進行 溶劑交換而將溶劑曱苯換成1-甲氧基-2-丙醇乙酸酯(以下 稱作PGMEA),從而獲得中間產物(a_2)之25%之PGMEA溶 液。An interlayer insulating film (layer) or a planarizing film for a substrate is particularly useful as an interlayer insulating film (layer) or a planarizing film for an active matrix substrate including a TFT in which a polycrystalline germanium film is used as an active layer. The permanent resist of the present invention can also be used for an interlayer insulating film of a semiconductor element. Moreover, it can also be used for wafer coating materials for semiconductor devices (surface protection 貘, bump protection film, MCM (Multi-Chip Module) interlayer protection film 'junction coating), packaging material (sealing material) , bonded crystal). 144043.doc -46· 201030468 The permanent resist of the present invention can also be used as an insulating film for a semiconductor element, a multilayer wiring board or the like. Examples of the semiconductor element include a separate semiconductor element such as a diode, a transistor, a compound semiconductor, a thermistor, a varistor, and a thyristor; a DRAM (Dynamic Random Access Memory), and an SRAM (Static Random) Access Memory, Static Random Access Memory, EPROM (Erasable Programmable Read Only Memory), Masked Only Memory (Mask Read Only Memory) ), EEPROM (Electrical Erasable Programmable Read Only Memory), flash memory (memory memory) and other memory components; microprocessor, DSP (Digital Signal Processor, digital signal processor) Theoretical circuit components such as ASIC (Application Specific Integrated Circuit); integrated circuit components such as compound semiconductors represented by MMIC (Monolithic Microwave Integrated Circuits); hybrid integrated circuits ( Hybrid 1C), light-emitting diode, charge-coupled component, etc. Wait. Further, examples of the multilayer wiring board include a high-density wiring board such as MCM. EXAMPLES Hereinafter, the present invention will be further described by way of Examples, but the present invention is not limited thereto. Further, the content of the sterol group is determined by reacting the sample with trimethyl gas decane in a pyridine solution to convert the sterol group into a trimethyl decane ether group, and then using an aqueous solution of tetradecyl ammonium hydroxide ((CH3)4NOH). The treatment was carried out so that the CO-Si bond water 144043.doc -47· 201030468 solution was calculated by recalculating the weight increase rate after the reaction. [(A) Manufacture of oxime resin (a)] In 300 parts by mass of toluene, 2,4,68-tetradecylcyclotetraoxane 100-mass, 4-ethylene base formic acid-third 85 parts by mass of butyl vinegar, 110 parts by mass of 4-tert-butoxy styrene, 93 parts by mass of trimethoxyvinyl decane, and platinum-divinyltetramethyl dioxane complex (Karstedt catalyst) 0.0001 parts by mass, while stirring, was reacted at 6 Torr for 15 hours. The solvent was distilled off under reduced pressure from the reaction mixture at 60 c to obtain a cyclic oxirane compound (a-1) (corresponding to the compound of the above formula (3a)). The cyclic anthraquinone compound (a-Ι) is at 25. (The following is a viscous liquid. In the analysis by W-NMR, no peak of 4 3 to 5 〇 ppm derived from a hydrogen atom of the Si—H group is detected. As a result of analysis by GPC, the mass average molecular weight is 900 ( The theoretical molecular weight is 933.1), and it is confirmed that the peak area ratio derived from unreacted 4-vinylbenzoic acid-t-butyl ester disappears to 0.5% or less. Then, '100 of the above-mentioned cyclic stone compound (a-1)) In the parts by mass, 40 parts by mass of phenyltrimethoxydecane (corresponding to the compound of the above formula (4)) and 200 parts by mass of toluene were added, and the mixture was stirred and cooled in an ice bath at 10 ° C for 30 minutes. 5 parts by mass of a 5% aqueous solution of oxalic acid was added dropwise, and the mixture was stirred for 15 hours while maintaining the temperature in the system at 1 ° C, and then subjected to reflux dehydration and dealcoholization under reduced pressure at 50 ° Under a reduced pressure, a solvent exchange was carried out to replace the solvent benzene with 1-methoxy-2-propanol acetate (hereinafter referred to as PGMEA) to obtain a 25% PGMEA solution of the intermediate product (a_2). .

為了脫離第三丁基,添加中間產物(a-2)之25%之PGMEA 144043.doc •48- 201030468 溶液400質量份、三氟化硼二乙醚錯合物3質量份,於80°C 下攪拌3小時之後,於減壓下進行1 00質量份之脫溶劑處 理,添加酸性物質之吸附劑(協和化學工業製造,商品 名:Kyowaad 500SH)10質量份後,於80°C下攪拌1小時而 獲得漿料溶液,對於該漿料溶液,藉由過濾而除去固形 物,從而獲得本發明之(A)矽氧樹脂(a)之30%之PGMEA溶 液。矽氧樹脂(a)之藉由GPC分析而得之質量平均分子量為 6400,矽醇基含量為5.4質量%。 [(A)矽氧樹脂(b)之製造] 於上述環狀矽氧烷化合物(a-Ι)之100質量份中,添加苯 基三曱氧基矽烷8質量份、甲苯200質量份,一面於10°C下 進行冰浴冷卻攪拌,一面以30分鐘滴加5%之草酸水溶液 50質量份。於使系統内溫度保持於10°C之狀態下攪拌15小 時之後,於50°C、減壓下進行回流脫水.脫醇處理,於 50°C、減壓下進行甲苯與PGMEA之溶劑交換,從而獲得 中間產物(b-2)之25%之PGMEA溶液。 以下,進行與上述(A)矽氧樹脂(a)相同之操作,從而獲 得本發明之(A)矽氧樹脂(b)之30%之PGMEA溶液。矽氧樹 脂(b)之藉由GPC分析而得之質量平均分子量為9500,矽醇 基含量為4.2質量%。 [(A)矽氧樹脂(c)之製造] 於甲苯200質量份中添加苯基三甲氧基矽烷40質量份, 一面於10°C下進行冰浴冷卻攪拌,一面以1小時滴加5%之 草酸水溶液50質量份後,進而於10°C下攪拌3小時。於該 144043.doc -49- 201030468 反應液中,一面於1 〇°C下進行冰浴冷卻攪拌,一面以1小 時滴加2-(4-第三丁氧基羰基苯基)乙基三曱氧基矽烷44質 量份與2-(4-第三丁氧基苯基)乙基三曱氧基矽烷56質量份 之混合物,然後於l〇°C下攪拌15小時後,於50°C、減壓 下,進行回流脫水·脫醇處理,於50°C、減壓下進行曱苯 與PGMEA之溶劑交換,從而獲得中間產物(c-2)之25%之 PGMEA溶液。 以下,進行與矽氧樹脂(a)相同之操作,從而獲得本發明 之(A)矽氧樹脂(c)之30%之PGMEA溶液。矽氧樹脂(c)之藉 由GPC分析而得之質量平均分子量為6800,矽醇基含量為 4.1質量%。 [(A)矽氧樹脂(d)之製造] 使用4-乙烯基苯曱酸-第三丁酯212.5質量份,來替代4-乙烯基苯曱酸-第三丁酯85質量份與4-第三丁氧基苯乙烯 11 〇質量份,除此以外,進行與上述(A)矽氧樹脂(a)之製造 相同之操作,從而獲得本發明之(A)矽氧樹脂(d)之30%之 PGMEA溶液。矽氧樹脂(d)之藉由GPC分析而得之質量平 均分子量為6300,矽醇基含量為5.1質量%。 [(A)矽氧樹脂(e)之製造] 使用2-(4-第三丁氧基羰基苯基)乙基三曱氧基矽烷100質 量份,來替代2-(4-第三丁氧基羰基苯基)乙基三甲氧基矽 烷44質量份與2-(4-第三丁氧基苯基)乙基三甲氧基矽烷 56質量份之混合物,除此以外,進行與上述(A)矽氧樹 脂(c)之製造相同之操作,從而獲得本發明之(A)矽氧樹脂 144043.doc -50- 201030468 (e)之30%之PGMEA溶液。再者,矽氧樹脂(e)之藉由Gpc 分析而得之質量平均分子量為7200,矽醇基含量為1〇1質 量 〇/〇。 [(A)矽氧樹脂⑴之製造] 使用4-乙烯基苯曱酸-第三丁酯170質量份與對第三丁氧 基苯乙烯36.7質量份,來替代4-乙烯基苯甲酸_第三丁酯85 質量份與4-第三丁氧基苯乙烯110質量份,除此以外,進 行與上述(A)^氧樹脂(a)之製造相同之操作,從而獲得本 發明之(A)矽氧樹脂⑺之30%之PGMEA溶液。再者,碎氧 樹脂(f)之藉由GPC分析而得之質量平均分子量為78〇〇,矽 醇基含量為5.1質量%。 [比較之矽氧樹脂(g)之製造] 使用4-第三丁氧基苯乙烯184質量份,來替代‘乙烯基 苯甲酸-第三丁酯85質量份與4_第三丁氧基苯乙烯11〇質量 份,除此以外,進行與上述(A)矽氧樹脂(a)之製造相同之 操作,從而獲得不具有以上述通式(1)所表示之基的比較之 矽氧樹脂(g)之30%之PGMEA溶液。再者,矽氧樹脂(g)之 藉由GPC分析而得之質量平均分子量為67〇〇,矽醇基含量 為4.8質量%。 [比較之矽氧樹脂(h)之製造] 使用2 (4第二丁氧基苯基)乙基三甲氧基石夕烧質量 份’來替代2-(4-第三丁氧基幾基苯基)乙基三甲氧基錢 44質篁份與2-(4-第三丁氧基苯基)乙基三甲氧基矽烷“質 量份之混合物,除m卜’進行與上述(增氧樹脂⑷之 144043.doc -51 - 201030468 製1^相同之操作,從而獲得不具有以上述通式(1)所表示之 基的比較之矽氧樹脂(h)之30%之PGMEA溶液。再者,矽 氧樹知(h)之藉由gpc分析而得之質量平均分子量為74〇〇, 矽醇基含量為1(^4質量。/〇。 [比較之矽氧樹脂⑴之製造] 根據日本專利特開2008· 116785號公報之實施例之合成 例1,於二丙酮醇(以下稱作DAA)157質量份中,添加甲基 二甲氧基矽烷1〇〇質量份、苯基三曱氧基矽烷78質量份, 一面於室溫下進行攪拌,一面以1〇分鐘滴加〇3%之磷酸水 溶液61質量份。其後,於4〇。(:下攪拌30分鐘後,以30分鐘 升溫至105°C,進而於1〇5。(:下攪拌2小時,藉此獲得比較 之矽氧樹脂⑴之DAA溶液。矽氧樹脂⑴之DAA溶液之固形 物濃度為39質量❶/。,含水率為^重量%,矽氧樹脂⑴之質 量平均分子量為6000。 [(B)具有縮水甘油醚基之矽氧烷化合物⑴之製造] 於甲本300質量份中添加2,4,6,8-四甲基環四石夕氧炫1〇〇 質量份、烯丙基縮水甘油醚190質量份、及鉑-二乙烯基四 甲基二矽氧烷錯合物(Karstedt觸媒)〇.〇〇〇1質量份,一面進 行攪拌,一面於50〜60。(:下反應15小時。於60。(:下自該反 應液中減壓蒸餾除去溶劑,從而獲得本發明之具有縮 水甘油醚基之矽氧烷化合物。矽氧烷化合物⑴於25〇c下 為黏稠之液體’環氧當量為174,於NMR分析中未見源自 Si-Η基之氫原子的波峰。又,藉由ope分析而得之質量平 均分子量為700 ’無法確認源自未反應之烯丙基縮水甘油 144043.doc -52- 201030468 醚的波峰。 [(B)具有縮水甘油醚基之矽氧烷化合物(k)之製造]To remove the third butyl group, add 25% of the intermediate product (a-2) PGMEA 144043.doc • 48- 201030468 solution 400 parts by mass, boron trifluoride diethyl ether complex 3 parts by mass, at 80 ° C After stirring for 3 hours, 100 parts by mass of the desolvation treatment was carried out under reduced pressure, and 10 parts by mass of an acidic adsorbent (manufactured by Kyowa Chemical Industry Co., Ltd., trade name: Kyowaad 500SH) was added, and the mixture was stirred at 80 ° C for 1 hour. While a slurry solution was obtained, the solid matter was removed by filtration to obtain a PGMEA solution of 30% of the (A) oxime resin (a) of the present invention. The mass average molecular weight of the epoxy resin (a) by GPC analysis was 6,400, and the sterol group content was 5.4% by mass. [(A) Production of the oxime resin (b)] To 100 parts by mass of the above cyclic siloxane compound (a-fluorene), 8 parts by mass of phenyltrimethoxy decane and 200 parts by mass of toluene are added. After cooling and stirring in an ice bath at 10 ° C, 50 parts by mass of a 5% aqueous oxalic acid solution was added dropwise over 30 minutes. After stirring for 15 hours while maintaining the temperature in the system at 10 ° C, the mixture was subjected to reflux dehydration at 50 ° C under reduced pressure. The dealcoholization treatment was carried out, and solvent exchange of toluene and PGMEA was carried out at 50 ° C under reduced pressure. Thus, a 25% PGMEA solution of the intermediate product (b-2) was obtained. Next, the same operation as in the above (A) oxime resin (a) was carried out to obtain a PGMEA solution of 30% of the (A) oxime resin (b) of the present invention. The mass average molecular weight of the oxime resin (b) by GPC analysis was 9,500, and the sterol group content was 4.2% by mass. [(A) Production of the oxime resin (c)] 40 parts by mass of phenyltrimethoxy decane was added to 200 parts by mass of toluene, and the mixture was cooled and stirred at 10 ° C in an ice bath, and 5% was added dropwise over 1 hour. After 50 parts by mass of the aqueous oxalic acid solution, the mixture was further stirred at 10 ° C for 3 hours. In the reaction solution of 144043.doc -49- 201030468, the mixture was stirred and cooled in an ice bath at 1 ° C, and 2-(4-t-butoxycarbonylphenyl)ethyltriazine was added dropwise over 1 hour. a mixture of 44 parts by mass of oxydecane and 56 parts by mass of 2-(4-t-butoxyphenyl)ethyltrimethoxy oxane, and then stirred at 10 ° C for 15 hours, at 50 ° C, Under reduced pressure, reflux dehydration and dealcoholization were carried out, and solvent exchange of toluene with PGMEA was carried out at 50 ° C under reduced pressure to obtain a 25% PGMEA solution of the intermediate product (c-2). Hereinafter, the same operation as the oxime resin (a) was carried out to obtain a PGMEA solution of 30% of the (A) oxime resin (c) of the present invention. The mass average molecular weight of the epoxy resin (c) by GPC analysis was 6,800, and the sterol group content was 4.1% by mass. [(A) Production of Oxygen Resin (d)] Using 42.5 parts by mass of 4-vinylbenzoic acid-t-butyl ester instead of 4-vinylbenzoic acid-t-butyl ester 85 parts by mass and 4- The operation similar to the production of the above (A) oxime resin (a) is carried out, except that the third butoxy styrene is 11 parts by mass, thereby obtaining the (A) oxirane resin (d) of the present invention. % PGMEA solution. The mass average molecular weight of the epoxy resin (d) by GPC analysis was 6,300, and the sterol group content was 5.1% by mass. [(A) Production of Oxygen Resin (e)] Using 2-(4-tert-butoxycarbonylphenyl)ethyltrimethoxy decane in an amount of 100 parts by mass in place of 2-(4-t-butoxy) a mixture of 44 parts by mass of carbonylcarbonyl)ethyltrimethoxydecane and 56 parts by mass of 2-(4-t-butoxyphenyl)ethyltrimethoxynonane, and the above (A) The same operation was carried out for the production of the oxime resin (c), thereby obtaining a PGMEA solution of 30% of the (A) oxime resin 144043.doc - 50 - 201030468 (e) of the present invention. Further, the mass average molecular weight of the epoxy resin (e) by Gpc analysis was 7200, and the sterol group content was 1〇1 mass 〇/〇. [(A) Production of Oxygen Resin (1)] Using 70 parts by mass of 4-vinylbenzoic acid-t-butyl ester and 36.7 parts by mass of p-tert-butoxystyrene instead of 4-vinylbenzoic acid _ (A) The same operation as the above (A) oxy resin (a) is carried out, except that 85 parts by mass of tributyl acrylate and 110 parts by mass of 4-t-butoxy styrene are used, thereby obtaining (A) of the present invention. A 30% PGMEA solution of the epoxy resin (7). Further, the mass average molecular weight of the ground oxygen resin (f) by GPC analysis was 78 Å, and the sterol group content was 5.1% by mass. [Comparison of oxirane resin (g)] 184 parts by mass of 4-tert-butoxy styrene was used instead of 'vinyl benzoic acid-tert-butyl ester 85 parts by mass and 4_t-butoxybenzene In the same manner as in the production of the above (A) oxime oxy-resin (a), a comparative oxime resin having no base represented by the above formula (1) was obtained. g) 30% of PGMEA solution. Further, the mass average molecular weight of the epoxy resin (g) by GPC analysis was 67 Å, and the sterol group content was 4.8% by mass. [Comparison of the production of the oxime resin (h)] The use of 2 (4,2,2-butoxyphenyl)ethyltrimethoxy sulphide in part to replace 2-(4-t-butoxyphenyl)phenyl Ethyltrimethoxy ketone 44 hydrazine and 2-(4-t-butoxyphenyl)ethyltrimethoxy decane "mass portion of a mixture, except m b" and the above (oxygenated resin (4) 144043.doc -51 - 201030468 The same operation was carried out to obtain a PGMEA solution of 30% of the comparative oxime resin (h) having no base represented by the above formula (1). The mass average molecular weight of the tree (h) obtained by gpc analysis is 74 〇〇, and the sterol group content is 1 (^4 mass. / 〇. [Comparative production of oxime resin (1)] According to Japanese Patent Laid-Open In Synthesis Example 1 of the Example of JP-A-2008-785785, methyl methoxy decane was added in an amount of 1 part by mass, and phenyltrimethoxy decane 78 was added to 157 parts by mass of diacetone alcohol (hereinafter referred to as DAA). In a mass portion, while stirring at room temperature, 61 parts by mass of a 3% aqueous phosphoric acid solution was added dropwise thereto for 1 minute, and then, at 4 Torr. (: stirring for 30 minutes) The temperature was raised to 105 ° C in 30 minutes, and further stirred at 1 〇 5 ((:) for 2 hours, thereby obtaining a comparative DAA solution of the oxirane resin (1). The solid content concentration of the DAA solution of the oxirane resin (1) was 39 ❶. The water content is 5% by weight, and the mass average molecular weight of the oxime resin (1) is 6000. [(B) Manufacture of the oxirane compound (1) having a glycidyl ether group] 2, 4 is added to 300 parts by mass of the present invention , 6,8-tetramethylcyclotetrazepine, 1 part by mass, 190 parts by weight of allyl glycidyl ether, and platinum-divinyltetramethyldioxane complex (Karstedt catalyst) 1) parts by mass, while stirring, on the side of 50 to 60. (: 15 hours under reaction. On 60. (:: The solvent is distilled off under reduced pressure from the reaction liquid, thereby obtaining the present invention A glycidyl ether-based oxane compound. The oxirane compound (1) is a viscous liquid at 25 〇c with an epoxy equivalent of 174, and no peak of a hydrogen atom derived from a Si-fluorenyl group is observed in the NMR analysis. The mass average molecular weight obtained by ope analysis is 700 'cannot be confirmed from unreacted allyl glycidol 1 44043.doc -52- 201030468 The peak of ether. [(B) Manufacture of a heptane compound (k) having a glycidyl ether group]

於甲苯50質量份中添加1,1,3,3-四甲基二石夕氧燒質量 伤、稀丙基縮水甘油喊170份、及翻-二乙稀基四甲基_碎 氧烷錯合物(Karstedt觸媒)0.0005質量份,一面進行授掉, 一面於50〜6(TC下反應15小時。於6〇t下自該反應液中減 壓蒸館除去溶劑,從而獲得本發明之(B)具有縮水甘油喊 基之矽氧烧化合物(k)。石夕氧烧化合物(k)之環氧當量為 182,於NMR分析中未見源自si_H基之氫原子的波峰。 又,藉由GPC分析而得之質量平均分子量為36〇,無法確 認源自未反應之烯丙基縮水甘油醚的波峰。 [(B)具有縮水甘油醚基之矽氧烷化合物⑴之製造] 於甲苯150質量份中添加苯基三甲氧基矽烷1〇〇質量份、 3-縮水甘油氧基丙基三曱氧基矽烷4〇質量份,一面於⑺艽 下進行冰浴冷卻攪拌,一面以3〇分鐘滴加5質量%之甲酸 5〇質量份。於使系統内溫度保持於1〇χ:之狀態下攪拌。小 時後,添加水,反覆進行水洗直至水層成為中性為止。一 面於5〇°C、減壓下進行回流,—面除去水及藉由反應而生 成之甲醇’然後於50C、減壓下進行曱苯與pGMEA之溶 劑交換,從而獲得本發明之(B)具有縮水甘油醚基之矽氧 烧化合物溶液⑴之4()%2PGMEA溶液。具有縮水甘㈣基 之矽氧烷化合物溶液⑴於FT-IR(Fourier Transform ared傅立葉轉換紅外線)分析中,於ηcm-i 處確⑽到源自碎醇基之較廣之吸收,環氧當量為遍,藉 144043.doc •53· 201030468 由GPC分析而得之質量平均分子量為4〇〇〇,矽醇基含量為 11.2質量%。 [比較之具有環氧基之矽氧烷化合物(m)之製造] 使用一氧化乙烯基環己烯2〇7質量份來替代烯丙基縮水 甘油醚190質量份,除此以外,進行與上述(B)具有縮水甘 油鍵基之碎氧燒化合物⑴相同之操作,從而獲得比較之具 有環氧基之矽氧烷化合物。矽氧烷化合物下 為黏稠之液體’環氧當量為183,於NMR分析中未見源自 Si-H基之氫原子的波峰。又,藉由GPc分析而得之質量平 均分子量為730 ’無法確認源自未反應之一氧化乙烯基環 己稀的波峰。 比較之具有環氧基之化合物(n) 雙酚A之二縮水甘油醚(AdekA公司製造,商品名: Adeka Resin EP-4100) 比較之具有環氧基之化合物(p) 3,4-環氧環己烯基甲基_3,,4,_環氧環己烯甲酸酯(Daicel 化學工業公司製造,商品名:Celloxide 2021P) (C)重氮萘酿類(DNQ) 上述式(12)中所有之Q為以式(11)所表示之基的化合物 (Daito Chemix公司製造,商品名:PA-6) [實施例1〜11及比較例1-1 6]正型感光性組合物之製備 以[表1 ]所示之比例進行調配後,利用孔徑為〇.2 μπι之過 濾器進行過濾,然後製備實施例1〜11及比較例1〜16之正塑 感光性組合物。再者,溶劑係追加成表中之值。 144043.doc -54- 201030468 [表i] (Α)成分 (B)成分 (c)成分 (D)成分 實施例1 ⑻100 (m〇 DNQ,7 PGMEA,240 實施例2 (a) 100 (1)10 DNQ,7 PGMEA » 240 實施例3 (b)100 (k)l〇 DNQ,7 PGMEA,240 ΪΓ施例4 (c)100 0)10 DNQ,7 PGMEA,240 實施例5 (d)100 (l)i〇 DNQ,7 PGMEA,240 實施例6 (d)100 (m〇 DNQ,7 PGMEA,240 實施例7 ⑹100 0)10 DNQ,7 PGMEA,240 實施例8 ⑹100 (m〇 DNQ,7 PGMEA,240 實施例9 (f)100 (i)i〇 DNQ,7 PGMEA,240 實施例10 (f)100 〇〇 i〇 DNQ,7 PGMEA,240 實施例11 (f)100 0)10 DNQ,7 PGMEA , 240 比較例1 ⑻100 — DN〇 » 7 PGMEA , 240 . 比較例2 (b)100 — DNQ,7 PGMEA,240 比較例3 (c)100 — DNQ,7 PGMEA,240 比較例4 (d)100 — DNQ,7 PGMEA , 240 比較例5 (e)100 — DNQ,7 PGMEA,240 比較例6 ⑻100 (m)10 DNQ,7 PGMEA,240 比較例7 ⑻100 (n)l〇 DNQ,7 PGMEA,240 比較例8 (b)100 in) 10 DNQ,7 PGMEA,240 比較例9 ⑹100 (p)1〇 DNQ,7 PGMEA,240 比較例10 (d)100 (m)10 DNQ,7 PGMEA,240 比較例11 ⑹100 (m)10 DNQ,7 PGMEA,240 比較例12 (g)l〇〇 (i)i〇 DNQ,7 PGMEA,240 比較例13 (g)ioo (_ DNQ,7 PGMEA,240 比較例14 (h)100 (i)l〇 DNQ,7 PGMEA > 240 比較例15 (h)100 _ DNQ,7 PGMEA,240 比較例16 (i)100 — DNQ,7 DAA,173 GBL,20 水,7Adding 1,1,3,3-tetramethyldiazepine mass burn to the 50 parts by mass of toluene, 170 parts of dilute propyl glycidol, and turning-diethylene tetramethyl _ oxa hydride 0.0005 parts by mass of the compound (Karstedt catalyst) was transferred and reacted at 50 to 6 (TC for 15 hours). The solvent was evaporated from the reaction liquid under reduced pressure at 6 Torr to obtain the present invention. (B) an oxy-oxygen compound (k) having a glycidyl group. The epoxy equivalent of the oxalate compound (k) was 182, and no peak derived from a hydrogen atom of the si-H group was observed in the NMR analysis. The mass average molecular weight obtained by GPC analysis was 36 Å, and the peak derived from unreacted allyl glycidyl ether could not be confirmed. [(B) Production of a glycidyl ether group-containing oxane compound (1)] Toluene To 100 parts by mass, 1 part by mass of phenyltrimethoxydecane and 4 parts by mass of 3-glycidoxypropyltrimethoxy oxane were added, and the mixture was stirred and cooled in an ice bath under (7) Torr. 5 parts by mass of 5 parts by mass of formic acid was added dropwise in minutes, and the temperature in the system was maintained at 1 〇χ: After an hour, water was added and the water layer was washed repeatedly until the water layer became neutral. The mixture was refluxed under reduced pressure at 5 ° C, and water was removed from the surface and methanol formed by the reaction was then taken at 50 C under reduced pressure. Performing solvent exchange of toluene with pGMEA to obtain (B) a solution of the glycidyl ether group-containing oxy-oxygen compound solution (1) of 4()%2PGMEA of the present invention. The solution of the oxime compound having a glycidyl group (1) is In the analysis of FT-IR (Fourier Transform ared), it is confirmed at ηcm-i (10) to the wider absorption from the alcohol base, and the epoxy equivalent is repeated. By 144043.doc •53· 201030468 by GPC analysis The mass average molecular weight was 4 Å and the sterol group content was 11.2% by mass. [Comparison of the epoxy group-containing oxirane compound (m)] Using vinyl oxyethylene cyclohexene 2 〇 7 In the same manner as in the above (B) the oxyhydrogenated compound (1) having a glycidyl bond group, the same procedure as in the above (B) is carried out in order to obtain a comparative epoxy group having an epoxy group, in addition to 190 parts by mass of the allyl glycidyl ether. Alkane compound The compound was a viscous liquid with an epoxy equivalent of 183, and no peak derived from a hydrogen atom derived from Si-H group in the NMR analysis. Further, the mass average molecular weight obtained by GPC analysis was 730 'unconfirmed One of the unreacted oxidized vinyl cyclohexane peaks. Comparison of compounds having an epoxy group (n) Bisphenol A diglycidyl ether (manufactured by Adek A, trade name: Adeka Resin EP-4100) Oxygen compound (p) 3,4-epoxycyclohexenylmethyl_3,4,-epoxycyclohexenecarboxylate (manufactured by Daicel Chemical Industry Co., Ltd., trade name: Celloxide 2021P) (C) Diazo naphthalene (DNQ) All of the above formula (12) is a compound represented by the formula (11) (manufactured by Daito Chemix Co., Ltd., trade name: PA-6) [Examples 1 to 11 and comparison Example 1-1 6] Preparation of a positive photosensitive composition After blending in the ratio shown in [Table 1], filtration was carried out using a filter having a pore size of 〇.2 μm, and then Examples 1 to 11 and Comparative Examples were prepared. A positive photosensitive composition of 1 to 16. Further, the solvent is added to the value in the table. 144043.doc -54- 201030468 [Table i] (Α) component (B) component (c) component (D) component Example 1 (8) 100 (m〇DNQ, 7 PGMEA, 240 Example 2 (a) 100 (1) 10 DNQ,7 PGMEA » 240 Example 3 (b) 100 (k) l DNQ, 7 PGMEA, 240 ΪΓ Example 4 (c) 100 0) 10 DNQ, 7 PGMEA, 240 Example 5 (d) 100 ( l) i〇DNQ, 7 PGMEA, 240 Example 6 (d) 100 (m〇DNQ, 7 PGMEA, 240 Example 7 (6) 100 0) 10 DNQ, 7 PGMEA, 240 Example 8 (6) 100 (m〇DNQ, 7 PGMEA , 240 Example 9 (f) 100 (i) i 〇 DNQ, 7 PGMEA, 240 Example 10 (f) 100 〇〇i 〇 DNQ, 7 PGMEA, 240 Example 11 (f) 100 0) 10 DNQ, 7 PGMEA, 240 Comparative Example 1 (8) 100 - DN〇» 7 PGMEA , 240 . Comparative Example 2 (b) 100 - DNQ, 7 PGMEA, 240 Comparative Example 3 (c) 100 - DNQ, 7 PGMEA, 240 Comparative Example 4 (d) 100 — DNQ, 7 PGMEA , 240 Comparative Example 5 (e) 100 — DNQ, 7 PGMEA, 240 Comparative Example 6 (8) 100 (m) 10 DNQ, 7 PGMEA, 240 Comparative Example 7 (8) 100 (n) l〇DNQ, 7 PGMEA, 240 Comparative Example 8 (b) 100 in) 10 DNQ, 7 PGMEA, 240 Comparative Example 9 (6) 100 (p) 1 〇 DNQ, 7 PGMEA, 240 Comparative Example 10 (d) 100 (m) 10 DNQ, 7 PGMEA, 240 Comparative Example 11 (6) 100 (m) 10 DNQ, 7 PGMEA, 240 Comparative Example 12 (g) l 〇〇 (i) i 〇 DNQ, 7 PGMEA, 240 Comparative Example 13 (g) ioo (_ DNQ, 7 PGMEA, 240 Comparative Example 14 (h) 100 (i) l DNQ, 7 PGMEA > 240 Comparative Example 15 (h) 100 _ DNQ, 7 PGMEA, 240 Comparative Example 16 ( i) 100 — DNQ, 7 DAA, 173 GBL, 20 water, 7

溶劑PGMEA : 1 -甲氧基-2-丙醇乙酸酯 DAA :二丙酮醇 GBL : γ-丁内酯 對實施例1〜11及比較例1〜16之正型感光性組合物進行下 述評價。將結果示於[表2]中。 (試驗片之製備法) 藉由旋塗法,將正型感光性組合物以厚度成為4〜5 μηι之 方式,塗佈於縱25 mm、橫25 mm之正方形之玻璃基板或 ITO(Indium Tin Oxide,氧化銦錫)蒸鑛玻璃基板(ITO厚: 100 nm)上,然後使溶劑揮發,將其用於試驗片。再者, 正型感光性組合物係於製備後,於23 °C之恆溫槽中保存1 144043.doc -55- 201030468Solvent PGMEA: 1-methoxy-2-propanol acetate DAA: diacetone alcohol GBL: γ-butyrolactone The positive photosensitive compositions of Examples 1 to 11 and Comparative Examples 1 to 16 were subjected to the following Evaluation. The results are shown in [Table 2]. (Preparation method of test piece) The positive photosensitive composition was applied to a square glass substrate of 25 mm in length and 25 mm in width by a spin coating method to a thickness of 4 to 5 μm, or ITO (Indium Tin) Oxide, indium tin oxide) was evaporated on a glass substrate (ITO thickness: 100 nm), and then the solvent was volatilized and used for a test piece. Furthermore, the positive photosensitive composition is stored in a thermostat at 23 ° C after preparation. 1 144043.doc -55- 201030468

曰(24小時)後再使用。此外,為 對於在23°C 為了用於保存穩定性試驗,Use it after 曰 (24 hours). In addition, for the test at 23 ° C for preservation stability,

物,亦製備玻璃基板之試驗片。A test piece of a glass substrate was also prepared.

之四曱基氫氧化銨水溶液中浸潰70秒鐘,然後進行清洗、風 乾。對風乾之試驗片,藉由超高壓水銀燈以2〇〇 mj/cm2(波 長365 nm曝光換算)照射紫外線,然後於大氣環境下,以 230°C進行60分鐘之加熱處理,或者於氮氣環境下,以 350°C進行30分鐘之加熱處理,從而形成永久抗蝕膜。 於使用ιτο蒸鍍玻璃基板之試驗片之情形時,於 下’對試驗片加熱處理2分鐘後,不使用光罩,藉由超高 壓水銀燈以200 mJ/cm2(波長365 nm曝光換算)照射紫外線 後,於大氣環境下以230°C進行60分鐘之加熱處理,或者 於氮氣環境下以350°C進行30分鐘之加熱處理。利用蒸鍛 法,於永久抗蝕膜上部形成A1之配線,從而製作介電常數 測定用之試驗片。 (保存穩定性試驗) 將於23 0°C下加熱處理60分鐘之玻璃基板之試驗片切斷 後,使用掃描式電子顯微鏡來觀察除去鹼溶部之破填基板 面的抗蝕劑殘渣之有無,根據下述<評價基準>來評價保存 穩疋性。抗敍劑殘潰係由於正空感光性組合物之—部分高 144043.doc -56- 201030468 为量化,對鹼性顯影液之溶 者。試驗係對在抑下分別保存低而產生 光性組合物之各試驗片[_ 7曰及60曰之正型感 型感光性組合二=。再者,於保存1曰或7曰之正 中見到抗蝕劑殘渣之正型感光性έ人& 之試驗片未用於之後的試驗卜 組合物 <評價基準> ◎ •即便為保存6〇日之正型感 1欵元性組&物,亦未見抗蝕劑The tetradecyl ammonium hydroxide aqueous solution was immersed in the aqueous solution for 70 seconds, and then washed and air-dried. The test piece for air drying is irradiated with ultraviolet light by an ultrahigh pressure mercury lamp at 2 〇〇mj/cm 2 (wavelength conversion at 365 nm), and then heated at 230 ° C for 60 minutes in an atmosphere, or under a nitrogen atmosphere. The heat treatment was performed at 350 ° C for 30 minutes to form a permanent resist film. In the case of using a test piece for vapor-depositing a glass substrate using ιτο, after heat-treating the test piece for 2 minutes, the ultraviolet ray is irradiated by an ultrahigh pressure mercury lamp at 200 mJ/cm2 (wavelength conversion at 365 nm) without using a photomask. Thereafter, the mixture was heated at 230 ° C for 60 minutes in an atmospheric environment or at 350 ° C for 30 minutes in a nitrogen atmosphere. A wiring for A1 was formed on the upper portion of the permanent resist film by a steaming method to prepare a test piece for measuring the dielectric constant. (Storage Stability Test) After the test piece of the glass substrate which was heat-treated at 230 ° C for 60 minutes was cut, the presence or absence of the resist residue on the surface of the broken substrate on which the alkali-soluble portion was removed was observed using a scanning electron microscope. The storage stability was evaluated according to the following <Evaluation Criteria>. The anti-synthesis agent is due to the fact that the positive photosensitive composition is partially high 144043.doc -56- 201030468 is quantified as a solution to the alkaline developer. The test was carried out for each of the test pieces [_ 7 曰 and 60 曰 of the positive-type photosensitive sensitization combination = 2 which were respectively low in the production of the optical composition. In addition, the test piece of the positive photosensitive sensitizer which was found to have a resist residue in the middle of the storage of 1 曰 or 7 未 was not used for the subsequent test composition < evaluation criteria > ◎ • Even for preservation 6 days of positive type 1 elementary group & thing, no resist

殘/査’保存穩定性非常優異。 〇·為保存7日之正型感光性組合物時,未見抗钱劑殘 產’但為保存60日後之正型感光性組合物時,見到抗蝕劑 殘渣’保存穩定性優異。 △:為保存1曰後之正型感光性組合物時,未幻充钱劑殘 渣’但為保存7日後之正型感光性組合物時,見到抗钱劑 殘渣,保存穩定性稍差。 χ ·即便為保存1日後之正型感光性組合物,亦見到抗飯 劑殘渣,保存穩定性不良。 (解像性試驗) 對於上述保存穩定性試驗中切斷之試驗片,使用掃描式 電子顯微鏡來觀察剖面,根據能否將5 μιη之線與間隙圖案 形成為1比1之寬度,以下述 &lt;評價基準 &gt; 來評價解像性。 &lt;評價基準&gt; 〇:圖案可形成1比1之寬度,解像性優異。 χ :圖案無法形成1比1之寬度’解像性差。 (耐熱圖案化試驗) 144043.doc -57· 201030468 對於上述解像性試驗中可將5 μιη之線與間隙圖案形成為 1比1之寬度之試驗片,進而於氮氣環境下以3贼加熱3〇 分鐘後,使用掃描式電子顯微帛來觀察剖自,以下述〈評 價基準 &gt;來評價圖案化之耐熱性。 &lt;評價基準&gt; 〇· 1比1之寬度之圖案化形狀得以維持,圖案化之耐熱性 優異。X :由於表面粗縫,膜厚減量等,未維持uti之寬 度之圖案化形狀,圖案化之耐熱性差。 (透明性試驗) 對於使用玻璃基板之各試驗片,測定波長為400 nm之光 之穿透率,以下述&lt;評價基準&gt;來評價透明性及耐熱性。再 者,本試驗之透光率係指波長為400 nm之光對4 μιη膜厚的 穿透率。 &lt;評價基準&gt; 〇:於23(TC下加熱處理之試驗片之透光率為96%以上於 350 C下加熱處理之試驗片之透光率為9〇%以上,透明性. 高熱歷程後之透明性優異。 △:於230°C下加熱處理之試驗片之透光率為96%以上,但 於350C下加熱處理之試驗片之透光率未達9〇%,透明性 優異,但高熱歷程後之透明性差。 X :於23 0°C下加熱處理之試驗片之透光率未達96%,透明 性差。 (耐水試驗) 對於使用玻璃基板之各試驗片,測定於60°C之離子交換 144043.doc -58· 201030468 水中浸潰24小時前後的波長為々(jo nm之光之穿透率,且使 用觸針式表面形狀測定器來測定抗蝕劑之膜厚,根據透光 率之變化率與膜厚之變化率,以下述&lt;評價基準&gt;來評價耐 水性。 &lt;評價基準&gt; 〇:於35(TC下加熱處理之試驗片的透光率之變化率未達 1 %,且膜厚之變化率未達1〇%,耐水性及高熱歷程後之耐 水性優異。 △:於230°C下加熱處理之試驗片的透光率之變化率未達 1%,且膜厚之變化率未達1〇%,但於35〇〇c下加熱處理之 試驗片的透光率之變化率為1%以上,或膜厚之變化率為 100/。以上’耐水性優異,但高熱歷程後之耐水性差。 X :於23 0°C下加熱處理之試驗片的透光率之變化率為1% 以上,或膜厚之變化率為1〇%以上,耐水性差。 (耐酸性試驗) 對於使甩玻璃基板之各試驗片,測定於4〇°c之5質量0/〇 之鹽酸水溶液中浸潰1小時前後的波長為4〇〇 ηιη之光之穿 透率’且使用觸針式表面形狀測定器來測定抗蝕劑之膜 厚,根據透光率之變化率與膜厚之變化率,以下述 &lt;評價 基準 &gt; 來評價耐酸性。 &lt;評價基準&gt; 〇:於350°C下加熱處理之試驗片的透光率之變化率未達 1 % ’且膜厚之變化率未達丨〇%,耐酸性及高熱歷程後之耐 酸性優異。 144043.doc -59- 201030468 △.於230 C下加熱處理之試驗片的透光率之變化率未達 10/〇,且膜厚之變化率未達1〇%,但於wc下加熱處理之 試驗片的透光率之變化率為1%以上,或膜厚之變化率為 10%以上,耐酸性優異,但高熱歷程後之耐酸性差。 X ·於230 C下加熱處理之試驗片的透光率之變化率為1〇/〇 以上’或膜厚之變化率為1〇%以上,对酸性差。 (财驗性試驗) 對於使用玻璃基板之各試驗片,測定於4〇〇c之鹼溶液 (單乙醇胺· N-甲基吡咯啶酮:二乙二醇丁醚=1〇: 3〇: 60質量比)中&amp;潰3〇分鐘前後的波長為4〇〇 nm之光之穿透 率’且使用觸針式表面形狀測定器來測定抗蝕劑之膜厚, 根據透光率之變化率與膜厚之變化率,以下述&lt;評價基準&gt; 來評價封驗性。 &lt;評價基準&gt; 〇.於350。(:下加熱處理之試驗片的透光率之變化率未達 1%,且膜厚之變化率未達丨〇%,耐鹼性及高熱歷程後之耐 鹼性優異。 △:於230°C下加熱處理之試驗片的透光率之變化率未達 ,且膜厚之變化率未達1〇%,但於35〇^下加熱處理之 試驗片的透光率之變化率為1%以上,或膜厚之變化率為 1〇0/。以上,耐鹼性優異,但高熱歷程後之耐鹼性差。 χ :於230°C下加熱處理之試驗片的透光率之變化率為ι% 以上’或膜厚之變化率為1〇%以上,耐鹼性差。 (耐溶劑性試驗) 144043.doc 201030468 對於使用玻璃基板之各試驗片,測定於80〇c之二甲基亞 颯(DMSO,dimethyl sulfoxide)中浸潰工小時前後的波長為 400 nm之光之穿透率,且使用觸針式表面形狀測定器來測 疋抗姓劑之膜厚,根據透光率之變化率與膜厚之變化率, 以下述 &lt;評價基準 &gt; 來評價耐酸性。 &lt;評價基準&gt; 〇·於350 C下加熱處理之試驗片的透光率之變化率未達Residual/checking's storage stability is excellent. In the case of the positive photosensitive composition of the seventh day, the anti-money agent was not found. However, when the positive photosensitive composition was stored for 60 days, the resist residue was found to be excellent in storage stability. △: In the case of the positive photosensitive composition after storage for 1 ,, the imaginary photosensitive residue was not used. However, when the positive photosensitive composition was stored for 7 days, the anti-money residue was observed, and the storage stability was slightly inferior. χ Even in the case of the positive photosensitive composition after one day of storage, the anti-rice residue was observed and the storage stability was poor. (Resolution test) For the test piece cut in the storage stability test described above, the cross section was observed using a scanning electron microscope, and the line of 5 μm and the gap pattern were formed to have a width of 1 to 1, according to the following &lt; Evaluation criteria &gt; to evaluate the resolution. &lt;Evaluation Criteria&gt; 〇: The pattern can be formed to have a width of 1 to 1, and is excellent in resolution. χ : The pattern cannot form a width of 1 to 1 and the resolution is poor. (Heat-resistant patterning test) 144043.doc -57· 201030468 For the above-mentioned resolution test, a 5 μm line and a gap pattern can be formed into a test piece having a width of 1 to 1, and further heated in a nitrogen atmosphere by 3 thieves. After 〇 minutes, the scanning electron micrograph was used to observe the cross-section, and the heat resistance of the pattern was evaluated by the following <Evaluation Criteria>. &lt;Evaluation Criteria&gt; The patterned shape of the width of 〇·1 is maintained, and the heat resistance of the pattern is excellent. X: The patterned shape of the width of the uti is not maintained due to the rough surface crack, the film thickness reduction, etc., and the heat resistance of the pattern is poor. (Transparency test) For each test piece using a glass substrate, the transmittance of light having a wavelength of 400 nm was measured, and transparency and heat resistance were evaluated by the following &lt;Evaluation Criteria&gt;. Furthermore, the transmittance of the test refers to the transmittance of light having a wavelength of 400 nm to a film thickness of 4 μm. &lt;Evaluation Criteria&gt; 〇: The light transmittance of the test piece heat-treated at 23% under TC at 96% or more at 350 C was 9 % or more, transparency, high heat history The film was excellent in transparency. Δ: The light transmittance of the test piece heat-treated at 230 ° C was 96% or more, but the light transmittance of the test piece heat-treated at 350 ° C was less than 9 %, and the transparency was excellent. However, the transparency after the high heat history was poor. X: The light transmittance of the test piece heated at 23 ° C was less than 96%, and the transparency was poor. (Water resistance test) For each test piece using a glass substrate, it was measured at 60°. C ion exchange 144043.doc -58· 201030468 The wavelength before and after the water immersion for 24 hours is 々 (the penetration rate of the light of jo nm, and the film thickness of the resist is measured using a stylus type surface shape measuring device, according to The rate of change of the light transmittance and the rate of change of the film thickness were evaluated by the following <Evaluation Criteria>. <Evaluation Criteria> 〇: Change in light transmittance of the test piece heated at 35 (TC) The rate is less than 1%, and the rate of change of film thickness is less than 1%, water resistance and water resistance after high heat history △: The test piece of the test piece heat-treated at 230 ° C has a rate of change of less than 1%, and the rate of change of the film thickness is less than 1%, but the test piece heat-treated at 35 ° C The rate of change of the light transmittance is 1% or more, or the rate of change of the film thickness is 100%. The above is excellent in water resistance, but the water resistance after the high heat history is poor. X: The test piece heat-treated at 23 0 ° C The rate of change in light transmittance is 1% or more, or the rate of change in film thickness is 1% by weight or more, and the water resistance is poor. (Acid resistance test) For each test piece of the bismuth glass substrate, the mass is measured at 5 〇 ° C The transmittance of light having a wavelength of 4 〇〇ηηη before and after immersion in 0% aqueous solution of hydrochloric acid for 1 hour and measuring the film thickness of the resist using a stylus type surface shape measuring device according to the change in light transmittance The rate of change of the film thickness and the film thickness was evaluated by the following <Evaluation Criteria>. &lt;Evaluation Criteria&gt; 〇: The rate of change of the light transmittance of the test piece heat-treated at 350 ° C was less than 1%. 'And the film thickness change rate is less than 丨〇%, acid resistance and acid resistance after high heat history. 144043.doc -59- 20103046 8 △. The rate of change of the light transmittance of the test piece heated at 230 C is less than 10 / 〇, and the rate of change of the film thickness is less than 1%, but the transmittance of the test piece heat-treated under wc The rate of change is 1% or more, or the rate of change in film thickness is 10% or more, and the acid resistance is excellent, but the acid resistance after the high heat history is poor. X · The rate of change of the light transmittance of the test piece heat-treated at 230 C 1 〇 / 〇 or more ' or the film thickness change rate is 1% or more, and the acidity is poor. (Financial test) For each test piece using a glass substrate, the alkali solution of 4 〇〇c is measured (monoethanolamine· N-methylpyrrolidone: diethylene glycol butyl ether = 1 〇: 3 〇: 60 mass ratio) medium & collapsing rate of light having a wavelength of 4 〇〇 nm before and after 3 minutes of lapse and using The film thickness of the resist was measured by a pin type surface shape measuring device, and the sealing property was evaluated by the following &lt; evaluation criteria&gt; according to the rate of change of the light transmittance and the film thickness. &lt;Evaluation criteria&gt; 〇. at 350. (The rate of change of the light transmittance of the test piece subjected to the heat treatment was less than 1%, and the rate of change of the film thickness was less than 丨〇%, and the alkali resistance and the alkali resistance after the high heat history were excellent. △: at 230° The rate of change of the light transmittance of the test piece heated under C was not reached, and the rate of change of the film thickness was less than 1%, but the rate of change of the light transmittance of the test piece heat-treated at 35 〇^ was 1%. The above or the film thickness change rate is 1 〇 0 / or more, and the alkali resistance is excellent, but the alkali resistance after the high heat history is poor. χ : The rate of change of the light transmittance of the test piece heat-treated at 230 ° C ι% or more ' or the film thickness change rate is 1% or more, and the alkali resistance is poor. (Solvent resistance test) 144043.doc 201030468 For each test piece using a glass substrate, the dimethyl hydrazine at 80 〇 c is measured. (DMSO, dimethyl sulfoxide) The transmittance of light having a wavelength of 400 nm before and after the immersion hour, and using a stylus type surface shape measuring device to measure the film thickness of the anti-surname agent, according to the rate of change of light transmittance The rate of change in film thickness was evaluated by the following &lt;Evaluation Criteria&gt;. &lt;Evaluation Criteria&gt; 〇· at 350 C Rate of change of the light transmittance of the test piece heat treatment less than

1% ’且膜厚之變化率未達1G%,财溶劑性及高熱歷程後之 耐溶劑性優異。 △.於230C下加熱處理之試驗片的透光率之變化率未達 1%,且膜厚之變化率未達1〇%,但於3耽下加熱處理之 試驗片的透光率之變化率為1%以上,或膜厚之變化率為 10%以上’耐溶劑性優異,但高熱歷程後之耐溶劑性差。 X :於23(TC下加熱處理之試驗片的透光率之變化率為1% 以上,或m厚之變化率為10%以上,耐溶劑性差。 (介電常數試驗) 使用LCR測量 ,電感電容電 對於使用ITO蒸鍍玻璃基板之各試驗片, 儀(Inductance Capacitance Resistance Meter 以下述 &lt;評價基準 &gt;來評價低介 阻測量儀)測定介電常數, 電常數特性。 &lt;評價基準&gt; 〇:於減下加熱處理之試驗片之介電常數未達3.2,於 23代下加熱處理之試驗片與於3耽下加熱處理之試驗片 之介電常數的差未達G.2,低介電常數特性及高熱歷程後 144043.doc -61- 201030468 之低介電常數特性優異。 △:於230°C下加熱處理之試驗片之介電常數未達3.2,但 於230°C下加熱處理之試驗片與於35(TC下加熱處理之試驗 片之介電常數的差為0.2以上,低介電常數特性優異,但 高熱歷程後之低介電常數特性差。 X :於23 0°C下加熱處理之試驗片之介電常數為3.2以上, 低介電常數特性差。 [表2]1% ′ and the rate of change in film thickness is less than 1 G%, and the solvent resistance after the solvent and high heat history is excellent. △. The rate of change of the light transmittance of the test piece heated at 230 C was less than 1%, and the rate of change of the film thickness was less than 1%, but the change of the light transmittance of the test piece heat-treated at 3 Torr The rate is 1% or more, or the rate of change in film thickness is 10% or more. The solvent resistance is excellent, but the solvent resistance after a high heat history is inferior. X: The rate of change of light transmittance of the test piece heat-treated at 23 (TC) was 1% or more, or the rate of change of m-thickness was 10% or more, and the solvent resistance was poor. (Dielectric constant test) Measurement using LCR, inductance Capacitance Electricity The dielectric constant and the electric constant characteristics were measured for each test piece using an ITO vapor-deposited glass substrate, and the instrument (Inductance Capacitance Resistance Meter) was evaluated by the following <Evaluation Criteria>. &lt;Evaluation Criteria&gt; 〇: The dielectric constant of the test piece after the heat treatment was reduced to less than 3.2, and the difference between the dielectric constant of the test piece heat-treated under the 23rd generation and the test piece heat-treated at 3耽 was less than G.2, Low dielectric constant characteristics and high thermal history 144043.doc -61- 201030468 Excellent low dielectric constant characteristics △: The dielectric constant of the test piece heat treated at 230 ° C is less than 3.2, but at 230 ° C The heat-treated test piece and the test piece heat-treated at 35 (the test piece under TC have a difference of 0.2 or more, and have excellent low dielectric constant characteristics, but have poor low dielectric constant characteristics after a high heat history. X: at 23 0 The dielectric constant of the test piece heated at °C is 3 .2 or more, low dielectric constant characteristics are poor. [Table 2]

保存 穩定性 解像性 圖案化 财熱性 透明性 耐水性 耐酸性 对鹼性 财溶劑性 低介電常數 特性 實施例1 ◎ 〇 〇 〇 〇 〇 〇 〇 〇 實施例2 ◎ 〇 〇 〇 〇 〇 〇 〇 〇 實施例3 ◎ 〇 〇 〇 〇 〇 〇 〇 〇 實施例4 ◎ 〇 〇 〇 〇 〇 〇 〇 〇 實施例5 ◎ 〇 〇 〇 〇 〇 〇 〇 〇 實施例6 ◎ 〇 〇 〇 〇 〇 〇 〇 〇 實施例7 ◎ 〇 〇 〇 〇 〇 〇 〇 〇 實施例8 ◎ 〇 〇 〇 〇 〇 〇 〇 〇 實施例9 ◎ 〇 〇 〇 〇 〇 〇 〇 〇 實施例10 ◎ 〇 〇 〇 〇 〇 〇 〇 〇 實施例11 ◎ 〇 〇 〇 〇 〇 〇 〇 〇 比較例1 ◎ 〇 X 〇 Δ Δ Δ Δ Δ 比較例2 ◎ 〇 X Δ Δ △ Δ Δ Δ 比較例3 ◎ 〇 X Δ Δ △ Δ △ Δ 比較例4 ◎ 〇 X Δ Δ Δ △ Δ Δ 比較例5 ◎ 〇 X Δ Δ X Δ △ Δ 比較例6 △ 〇 〇 Δ Δ Δ Δ Δ X 比較例7 ◎ 〇 X Δ X △ Δ △ Δ 比較例8 ◎ 〇 X Δ Δ Δ Δ △ Δ 比較例9 X 〇 〇 Δ Δ Δ Δ Δ Δ 比較例10 〇 〇 X X Δ X Δ Δ X 比較例11 〇 〇 X Δ X X Δ Δ X 比較例12 ◎ 〇 X Δ Δ △ Δ Δ X 比較例13 ◎ 〇 X Δ Δ Δ Δ Δ △ 比較例14 ◎ 〇 X Δ Δ Δ Δ △ Δ 比較例15 ◎ 〇 X Δ Δ Δ Δ Δ Δ 比較例16 ◎ 〇 X X X Δ X X X -62- 144043.docStorage stability, resolution, patterning, heat, transparency, water resistance, acid resistance, alkalinity, solvent, low dielectric constant, Example 1, ◎ 〇〇〇〇〇〇〇〇 Example 2 ◎ 〇〇〇〇〇〇〇 〇Example 3 ◎ 〇〇〇〇〇〇〇〇 Example 4 ◎ 〇〇〇〇〇〇〇〇 Example 5 ◎ 〇〇〇〇〇〇〇〇 Example 6 ◎ 〇〇〇〇〇〇〇〇 Implementation Example 7 ◎ 〇〇〇〇〇〇〇〇 Example 8 ◎ 〇〇〇〇〇〇〇〇 Example 9 ◎ 〇〇〇〇〇〇〇〇 Example 10 ◎ 〇〇〇〇〇〇〇〇 Example 11 ◎ 〇〇〇〇〇〇〇〇Comparative Example 1 ◎ 〇X 〇Δ Δ Δ Δ Δ Comparative Example 2 ◎ 〇X Δ Δ Δ Δ Δ Δ Comparative Example 3 ◎ 〇X Δ Δ Δ Δ Δ Δ Comparative Example 4 ◎ 〇 X Δ Δ Δ Δ Δ Δ Comparative Example 5 ◎ 〇X Δ Δ X Δ Δ Δ Comparative Example 6 Δ 〇〇 Δ Δ Δ Δ Δ X Comparative Example 7 ◎ 〇X Δ X Δ Δ Δ Δ Comparative Example 8 ◎ 〇X Δ Δ Δ Δ Δ Δ Comparative Example 9 X 〇 Δ Δ Δ Δ Δ Δ Comparative Example 10 〇〇 XX Δ X Δ Δ X Comparative Example 11 〇〇X Δ XX Δ Δ X Comparative Example 12 ◎ 〇X Δ Δ Δ Δ Δ X Comparative Example 13 ◎ 〇X Δ Δ Δ Δ Δ △ Comparative Example 14 ◎ 〇X Δ Δ Δ Δ Δ Δ Comparative Example 15 ◎ 〇X Δ Δ Δ Δ Δ Δ Comparative Example 16 ◎ 〇XXX Δ XXX -62- 144043.doc

Claims (1)

201030468 七、申請專利範圍: 1 ·—種正型感光性組合物,其包含: 作為(A)成分的於1分子中具有至少2個以下述通式(1) [化1]201030468 VII. Patent application scope: 1 - a positive photosensitive composition comprising: as component (A) having at least two in one molecule of the following formula (1) [Chemical Formula 1] (1) (式中,R1表示可具有取代烴基之碳數卜1〇之伸烷基,R2 表示碳數1〜4之烷基,a表示〇或1〜4之數,b表示1〜3之 數,但a+b不超過5) 所表示之基的石夕氧樹脂; 作為(B)成分的具有縮水甘油基之矽氧烷化合物; 作為(C)成分的重氮萘酿類;以及 作為(D)成分的有機溶劑。 2_如請求項1之正型感光性組合物,其中上述作為(A)成分 之矽氧樹脂進而於1分子中具有至少1個以下述通式(2) [化2](1) (wherein R1 represents an alkylene group which may have a carbon number of a substituted hydrocarbon group, R2 represents an alkyl group having 1 to 4 carbon atoms, a represents a number of hydrazine or 1 to 4, and b represents a 1-3. a number, but a+b does not exceed 5) the base of the oxy-oxygen resin; a glycidyl group-containing oxirane compound as the component (B); and a diazo naphthalene as the component (C); An organic solvent as the component (D). The positive photosensitive composition of claim 1, wherein the above-mentioned oxime resin as the component (A) further has at least one of the following formula (2). (式中,R3表示可具有取代烴基之碳數丨〜1〇之伸垸基,Μ 表不碳數1〜4之院基’ c表示〇或1〜4之數,d车一 跃’ cl表不1〜3之 144043.doc 201030468 數,但c+d不超過5) 所表示之基。 3. 如請求項1之正型感光性組合物,其中上述作為(A)成分 之石夕氧樹脂進而含有石夕醇基。 4. 如请求項1之正型感光性組合物,其中上述作為成分 之石夕氧樹脂係使以下述通式(3) [化3](wherein R3 represents a carbon number of 取代~1〇 which may have a substituted hydrocarbon group, and 院 represents a non-carbon number of 1 to 4 of the hospital base 'c represents 〇 or 1 to 4, d car jumps 'cl The table is not 1 to 3 of the 144043.doc 201030468 number, but c+d does not exceed 5). 3. The positive photosensitive composition of claim 1, wherein the above-mentioned component (A) further contains a linaloyl group. 4. The positive photosensitive composition of claim 1, wherein the above-mentioned component is a compound of the following formula (3) [Chemical 3] 基之碳數1〜10之伸烷基,R2及R4表示可相同亦可不同之 碳數1〜4之烷基,R5、…及尺7表示可相同亦可不同之碳 數1〜10之烷基或苯基;a表示〇或1〜4之數,b表示1〜3之 數,但a+b不超過5 ; c表示〇或1〜4之數,d表示^之 數,但c+d不超過5 ; R9表示可相同亦可不同之碳數 之烧基或環烧基,R1G表示碳數1〜3之炫:基,e表示^之 數;m、η及 P表示 m : n : p = 1 ·‘ 〇〜2 : 0.5〜3 且 m+n+p=3〜6 之數) 所表示之環狀矽氧烷化合物、 與以下述通式(4) 144043.doc -2- 201030468 [化4]The alkyl group having a carbon number of 1 to 10, R 2 and R 4 are alkyl groups having the same or different carbon number of 1 to 4, and R 5 , ... and the size 7 are the same or different carbon numbers 1 to 10 Alkyl or phenyl; a represents 〇 or a number from 1 to 4, b represents a number from 1 to 3, but a+b does not exceed 5; c represents 〇 or a number from 1 to 4, and d represents the number of ^, but c +d does not exceed 5; R9 represents a carbon group or a ring-burning group which may be the same or different carbon number, R1G represents a carbon number of 1 to 3: base, and e represents a number of ^; m, η, and P represent m: n : p = 1 ·' 〇~2 : 0.5~3 and m+n+p=3~6) The cyclic siloxane compound represented by the following formula (4) 144043.doc -2 - 201030468 [Chem. 4] ⑷ a-t (式中’ R11表示可相同亦可不同之碳數卜6之院基或環烧 基,R12表示碳數卜3之烧基,R^3表示可相同亦可不同之 碳數1〜4之烷基,f表示2〜3之數,g表示〇或丨〜5之數)(4) at (where R11 represents the same or different carbon number of the hospital or ring group, R12 represents the carbon number 3, and R^3 means the same or different carbon number 1~ 4 alkyl, f represents the number of 2~3, g represents the number of 〇 or 丨~5) 所表示之芳基烷氧基矽烷化合物進行反應所得者。 5· 一種永久抗蝕劑,其特徵在於,其係由如請求項丨之正 型感光性組合物所得。 6· 一種永久抗蝕劑之製造方法,其特徵在於,將如請求項 1之正型感光性組合物塗佈於基材上,使塗佈物曝光, 進行鹼性顯影後,於120〜350°C之溫度下進行後烘烤。 7. 一種液晶顯示裝置,其包含將使用如請求項i之正型感 光性組合物所得之永久抗蝕劑作為絕緣層或平坦化膜的 主動矩陣基板。 8. 種有機EL顯示裝置’其包含將使用如請求項1之正型 感光性組合物所得之永久抗蝕劑作為絕緣層或平坦化膜 的主動矩陣基板。 144043.doc 201030468 四、指定代表圖: (一) 本案指定代表圖為:(無) (二) 本代表圖之元件符號簡單說明: 五、本案若有化學式時,請揭示最能顯示發明特徵的化學式:The aryl alkoxy decane compound represented by the reaction is obtained. A permanent resist which is obtained from a positive photosensitive composition as claimed in the claims. A method for producing a permanent resist, which comprises applying a positive photosensitive composition according to claim 1 to a substrate, exposing the coated article, and performing alkaline development at 120 to 350 Post-baking at a temperature of °C. A liquid crystal display device comprising an active matrix substrate using a permanent resist obtained by using a positive photosensitive composition of claim i as an insulating layer or a planarizing film. An organic EL display device comprising an active matrix substrate using a permanent resist obtained by using the positive photosensitive composition of claim 1 as an insulating layer or a planarizing film. 144043.doc 201030468 IV. Designation of representative drawings: (1) The representative representative of the case is: (none) (2) The symbol of the symbol of the representative figure is simple: 5. If there is a chemical formula in this case, please reveal the best indication of the characteristics of the invention. Chemical formula: 144043.doc144043.doc
TW98135477A 2008-10-21 2009-10-20 A positive type photosensitive composition and a permanent resist TWI437369B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008270972A JP4960330B2 (en) 2008-10-21 2008-10-21 Positive photosensitive composition and permanent resist

Publications (2)

Publication Number Publication Date
TW201030468A true TW201030468A (en) 2010-08-16
TWI437369B TWI437369B (en) 2014-05-11

Family

ID=42119289

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98135477A TWI437369B (en) 2008-10-21 2009-10-20 A positive type photosensitive composition and a permanent resist

Country Status (5)

Country Link
JP (1) JP4960330B2 (en)
KR (1) KR20110084493A (en)
CN (1) CN102112922B (en)
TW (1) TWI437369B (en)
WO (1) WO2010047248A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI468867B (en) * 2007-11-13 2015-01-11 Adeka Corp Positive photosensitive composition, positive permanent photoresist and positive permanent photoresist
TWI556062B (en) * 2011-10-25 2016-11-01 Adeka Corp Positive type minus composition

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5533232B2 (en) * 2009-06-29 2014-06-25 Jsr株式会社 Positive radiation sensitive composition, cured film, interlayer insulating film, method for forming interlayer insulating film, display element, and siloxane polymer for forming interlayer insulating film
JP5479993B2 (en) * 2010-04-20 2014-04-23 株式会社Adeka Positive photosensitive composition and permanent resist
JP5666266B2 (en) * 2010-11-25 2015-02-12 株式会社Adeka Positive photosensitive resin composition and permanent resist
JP5734629B2 (en) * 2010-11-25 2015-06-17 株式会社Adeka Positive photosensitive resin composition and permanent resist
JP5648518B2 (en) * 2011-02-10 2015-01-07 Jsr株式会社 Positive-type radiation-sensitive resin composition, interlayer insulating film for display element, and method for forming the same
JP5698070B2 (en) * 2011-05-11 2015-04-08 株式会社Adeka Positive photosensitive composition and cured product thereof
KR20130035779A (en) * 2011-09-30 2013-04-09 코오롱인더스트리 주식회사 Positive-type photoresist composition, insulating film and oled formed by using the same
US9063415B2 (en) 2011-10-25 2015-06-23 Adeka Corporation Photocurable resin composition and novel siloxane compound
KR101927979B1 (en) * 2011-10-25 2018-12-11 가부시키가이샤 아데카 Photocurable resin composition and novel siloxane compound
JP6013150B2 (en) * 2012-11-22 2016-10-25 メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 Method for producing positive photosensitive siloxane composition
JP6323225B2 (en) 2013-11-01 2018-05-16 セントラル硝子株式会社 Positive photosensitive resin composition, film production method using the same, and electronic component
KR20150068899A (en) * 2013-12-12 2015-06-22 제이엔씨 주식회사 Positive photosensitive compositions
TW201800860A (en) * 2015-12-17 2018-01-01 陶氏全球科技責任有限公司 Photo-imageable thin films with high dielectric constants

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61144639A (en) * 1984-12-19 1986-07-02 Hitachi Ltd Radiation sensitive composition and pattern forming method using its composition
JPS62239440A (en) * 1986-04-11 1987-10-20 Hitachi Ltd Information recording medium
JPS63239440A (en) * 1986-11-25 1988-10-05 Nippon Telegr & Teleph Corp <Ntt> Energy ray sensitive resin composition
TWI300516B (en) * 2001-07-24 2008-09-01 Jsr Corp
JP4382375B2 (en) * 2003-03-13 2009-12-09 Nec液晶テクノロジー株式会社 Thin film transistor manufacturing method
JP4494061B2 (en) * 2004-03-30 2010-06-30 東京応化工業株式会社 Positive resist composition
JP4784283B2 (en) * 2004-11-26 2011-10-05 東レ株式会社 Positive photosensitive siloxane composition, cured film formed therefrom, and device having cured film
JP2007304543A (en) * 2006-04-11 2007-11-22 Hitachi Chem Co Ltd Photosensitive resin composition, photosensitive film, resist pattern forming method, and printed wiring board and method for manufacturing the same
JP4910646B2 (en) * 2006-11-07 2012-04-04 東レ株式会社 Photosensitive siloxane composition and method for producing the same, cured film formed from photosensitive siloxane composition, and element having cured film
KR101428718B1 (en) * 2007-02-02 2014-09-24 삼성디스플레이 주식회사 Photo-resist composition, coating method thereof, method for patterning of organic film using the same and display device fabricated thereby
US8211619B2 (en) * 2007-11-13 2012-07-03 Adeka Corporation Positive photosensitive composition, positive permanent resist, and method for producing positive permanent resist

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI468867B (en) * 2007-11-13 2015-01-11 Adeka Corp Positive photosensitive composition, positive permanent photoresist and positive permanent photoresist
TWI556062B (en) * 2011-10-25 2016-11-01 Adeka Corp Positive type minus composition

Also Published As

Publication number Publication date
JP4960330B2 (en) 2012-06-27
JP2010101957A (en) 2010-05-06
WO2010047248A1 (en) 2010-04-29
KR20110084493A (en) 2011-07-25
CN102112922A (en) 2011-06-29
CN102112922B (en) 2012-12-26
TWI437369B (en) 2014-05-11

Similar Documents

Publication Publication Date Title
TW201030468A (en) Positive photosensitive composition and permanent resist
US7374856B2 (en) Positive type photo-sensitive siloxane composition, cured film formed from the composition and device incorporating the cured film
JP5105555B2 (en) Positive photosensitive composition, positive permanent resist, and method for producing positive permanent resist
JP4687250B2 (en) Photosensitive resin composition
JP5698070B2 (en) Positive photosensitive composition and cured product thereof
KR20120102090A (en) Positive photosensitive resin composition, cured film formed from same, and element having cured film
TWI482802B (en) Photosensitive siloxane composition, cured film formed by the sane, and element having the cured film
TWI556062B (en) Positive type minus composition
TW201005009A (en) Polyorganosiloxane, resin composition, and patterning process
TWI480334B (en) A silane-based composition and a hardened film thereof, and a method for forming a negative resist pattern using the same
JP5479993B2 (en) Positive photosensitive composition and permanent resist
JP2011123450A (en) Positive radiation-sensitive composition, interlayer insulating film, and forming method of the same
TW201231508A (en) Photosensitive resin composition
JP5734629B2 (en) Positive photosensitive resin composition and permanent resist
TW201144382A (en) Positive typed photosensitive composition
JP5666266B2 (en) Positive photosensitive resin composition and permanent resist
KR101631075B1 (en) Siloxane polymer composition
KR20140058847A (en) Organic-inorganic hybrid siloxane-based polymer and positive-type photosensitive resin composition comprising same
WO2021187324A1 (en) Negative photosensitive resin composition, pattern structure and method for producing patterned cured film
KR20120056773A (en) Positive photosensitive resin composition and permanent resist

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees