TWI437369B - A positive type photosensitive composition and a permanent resist - Google Patents

A positive type photosensitive composition and a permanent resist Download PDF

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TWI437369B
TWI437369B TW98135477A TW98135477A TWI437369B TW I437369 B TWI437369 B TW I437369B TW 98135477 A TW98135477 A TW 98135477A TW 98135477 A TW98135477 A TW 98135477A TW I437369 B TWI437369 B TW I437369B
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group
compound
decane
carbon atoms
photosensitive composition
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TW201030468A (en
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Seiichi Saito
Hiroshi Morita
Hiromi Takenouchi
Atsushi Kobayashi
Jinichi Omi
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Adeka Corp
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/14Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/16Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/14Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/18Polysiloxanes containing silicon bound to oxygen-containing groups to alkoxy or aryloxy groups
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers

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  • Organic Chemistry (AREA)
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  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Silicon Polymers (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Description

正型感光性組合物及永久抗蝕劑Positive photosensitive composition and permanent resist

本發明係關於一種使用聚矽氧烷化合物之正型感光性組合物,進而係關於一種使用該正型感光性組合物之永久抗蝕劑及永久抗蝕劑之製造方法。The present invention relates to a positive photosensitive composition using a polyoxyalkylene compound, and further to a method for producing a permanent resist and a permanent resist using the positive photosensitive composition.

由於資訊化社會之進展與多媒體系統之普及,液晶顯示裝置、有機EL(Electro-Luminescence,電致發光)顯示裝置等之重要性越來越大。於該等顯示裝置中,使用每個像素具有薄膜電晶體(TFT,Thin Film Transistor)等之開關元件的主動矩陣基板。Due to the progress of the information society and the popularity of multimedia systems, liquid crystal display devices and organic EL (Electro-Luminescence) display devices are becoming more and more important. In these display devices, an active matrix substrate each having a switching element such as a thin film transistor (TFT) is used.

於主動矩陣基板上形成有多個掃描配線、及經由絕緣膜而與該等掃描配線交叉之信號配線。主動矩陣基板之掃描配線、信號配線、絕緣膜等係藉由將利用濺鍍法、CVD(Chemical Vapor Deposition,化學氣相沈積)法、塗佈法等所形成之導電膜或絕緣膜,利用光微影法反覆進行圖案化而形成(例如參照專利文獻1及2)。A plurality of scanning wirings and signal wirings crossing the scanning wirings via the insulating film are formed on the active matrix substrate. The scanning wiring, the signal wiring, the insulating film, and the like of the active matrix substrate are made of a conductive film or an insulating film formed by a sputtering method, a CVD (Chemical Vapor Deposition) method, a coating method, or the like. The lithography method is formed by repeating patterning (for example, refer to Patent Documents 1 and 2).

通常,於光微影法中使用光阻劑,亦正開發圖案化後亦不剝離而用作絕緣膜或保護膜之抗蝕劑(永久抗蝕劑),但於主動矩陣基板上使用永久抗蝕劑之情形時,不僅要求耐化學品性(耐酸性、耐鹼性及耐溶劑性),而且要求高度之耐熱性、及高熱歷程後之耐化學品性。Usually, a photoresist is used in the photolithography method, and a resist (permanent resist) which is used as an insulating film or a protective film after patterning is also being developed, but permanent resist is used on the active matrix substrate. In the case of an etchant, chemical resistance (acid resistance, alkali resistance, and solvent resistance) is required, and high heat resistance and chemical resistance after a high heat history are required.

主動矩陣基板存在如下問題:於作為絕緣基板之玻璃基板上形成以多晶矽薄膜作為活性層之TFT,利用絕緣膜覆蓋多晶矽薄膜,但容易於多晶矽內部、或者結晶矽薄膜與絕緣基板或絕緣膜之界面產生作為矽鍵之缺陷的懸鍵,電晶體之特性降低。The active matrix substrate has a problem in that a TFT having a polycrystalline germanium film as an active layer is formed on a glass substrate as an insulating substrate, and the polysilicon film is covered with an insulating film, but is easily formed inside the polycrystalline silicon or the interface between the crystalline germanium film and the insulating substrate or the insulating film. The dangling bond, which is a defect of the 矽 bond, is generated, and the characteristics of the transistor are lowered.

為了消除懸鍵之問題,必需於氮化矽(SiNx )等之防止氫之擴散的膜存在之狀態下,於300~400℃左右之溫度下進行氫化處理(例如參照專利文獻3)。所謂先前之永久抗蝕劑之耐熱性,係指可耐受印刷配線板中之焊接的耐熱性,即可於260℃下耐受數分鐘之程度的耐熱性(例如參照專利文獻4),與主動矩陣基板所要求之耐熱性及高熱歷程後之耐化學品性大為不同。In order to eliminate the problem of the dangling bonds, it is necessary to carry out hydrogenation treatment at a temperature of about 300 to 400 ° C in a state in which a film for preventing hydrogen diffusion such as tantalum nitride (SiN x ) is present (for example, see Patent Document 3). The heat resistance of the conventional permanent resist refers to heat resistance which can withstand the soldering in the printed wiring board, and can withstand heat resistance at 260 ° C for several minutes (for example, refer to Patent Document 4), and The heat resistance required for the active matrix substrate and the chemical resistance after the high thermal history are greatly different.

另一方面,矽氧樹脂之透明性、絕緣性、耐熱性、耐化學品性等優異,亦已知以矽氧樹脂為主劑之光阻劑,但先前之矽氧樹脂系光阻劑由於耐熱性及高熱歷程後之耐化學品性不充分,故於主動矩陣基板上僅應用作表面之平坦化膜(例如參照專利文獻5)。On the other hand, the epoxy resin is excellent in transparency, insulating properties, heat resistance, chemical resistance, and the like, and a photoresist which is mainly composed of a phthalocyanine resin is known, but the conventional oxirane-based photoresist is Since the chemical resistance after heat resistance and high heat history is insufficient, only a flattening film for the surface is applied to the active matrix substrate (see, for example, Patent Document 5).

先前技術文獻Prior technical literature 專利文獻Patent literature

專利文獻1:日本專利特開2004-281506號公報Patent Document 1: Japanese Patent Laid-Open Publication No. 2004-281506

專利文獻2:日本專利特開2007-225860號公報Patent Document 2: Japanese Patent Laid-Open Publication No. 2007-225860

專利文獻3:日本專利特開平6-77484號公報Patent Document 3: Japanese Patent Laid-Open No. Hei 6-77484

專利文獻4:日本專利特開2007-304543號公報Patent Document 4: Japanese Patent Laid-Open Publication No. 2007-304543

專利文獻5:日本專利特開2008-116785號公報Patent Document 5: Japanese Patent Laid-Open Publication No. 2008-116785

因此,本發明之目的在於提供一種正型感光性組合物以及使用該正型感光性組合物之永久抗蝕劑及其製造方法,上述正型感光性組合物可提供一種透明性優異且亦可用作主動矩陣基板之絕緣膜的具有高度之耐熱性、高熱歷程後之耐化學品性的永久抗蝕劑。Accordingly, an object of the present invention is to provide a positive photosensitive composition and a permanent resist using the positive photosensitive composition, and a method for producing the same, wherein the positive photosensitive composition can provide an excellent transparency and can also provide A permanent resist which is used as an insulating film of an active matrix substrate and has high heat resistance and chemical resistance after a high thermal history.

本發明者等人進行銳意研究,結果完成本發明。The inventors of the present invention conducted intensive studies and as a result completed the present invention.

即,本發明提供一種正型感光性組合物,其包含:作為(A)成分的於1分子中具有至少2個以下述通式(1)That is, the present invention provides a positive photosensitive composition comprising, as component (A), at least two of the following formula (1)

[化1][Chemical 1]

(式中,R1 表示可具有取代烴基之碳數1~10之伸烷基,R2 表示碳數1~4之烷基,a表示0或1~4之數,b表示1~3之數,但a+b不超過5。)(wherein R 1 represents an alkylene group having 1 to 10 carbon atoms which may have a substituted hydrocarbon group, R 2 represents an alkyl group having 1 to 4 carbon atoms, a represents 0 or 1 to 4, and b represents 1 to 3 Number, but a+b does not exceed 5.)

所表示之基的矽氧樹脂;作為(B)成分的具有縮水甘油基之矽氧烷化合物;作為(C)成分的重氮萘醌類;以及作為(D)成分的有機溶劑。An oxygen-containing resin of the group represented; a fluorinated alkane compound having a glycidyl group as the component (B); a diazonaphthoquinone as the component (C); and an organic solvent as the component (D).

又,本發明提供一種永久抗蝕劑,其特徵在於,其係由上述正型感光性組合物所得。Further, the present invention provides a permanent resist which is obtained from the above positive photosensitive composition.

又,本發明提供一種永久抗蝕劑之製造方法,其特徵在於,將上述正型感光性組合物塗佈於基材上,使塗佈物曝光,進行鹼性顯影後,於120~350℃之溫度下進行後烘烤(post-bake)。Moreover, the present invention provides a method for producing a permanent resist, which comprises applying the positive photosensitive composition to a substrate, exposing the coated article, and performing alkaline development at 120 to 350 ° C. Post-bake at the temperature.

又,本發明提供一種液晶顯示裝置,其包含將使用上述正型感光性組合物所得之永久抗蝕劑作為絕緣層或平坦化膜之主動矩陣基板。Moreover, the present invention provides a liquid crystal display device comprising an active matrix substrate using a permanent resist obtained by using the positive photosensitive composition as an insulating layer or a planarizing film.

又,本發明提供一種有機EL顯示裝置,其包含將使用上述正型感光性組合物所得之永久抗蝕劑作為絕緣層或平坦化膜之主動矩陣基板。Moreover, the present invention provides an organic EL display device comprising an active matrix substrate using a permanent resist obtained by using the positive photosensitive composition as an insulating layer or a planarizing film.

本發明之效果在於提供一種正型感光性組合物、以及使用該正型感光性組合物之永久抗蝕劑及其製造方法,上述正型感光性組合物可提供一種不僅透明性較高,而且可耐受基板製作時之溫度的耐熱性、耐溶劑性、進而作為永久抗蝕劑之耐經時變化性優異的絕緣層。An effect of the present invention is to provide a positive photosensitive composition, a permanent resist using the positive photosensitive composition, and a method for producing the same, which can provide not only high transparency but also high transparency It is resistant to the heat resistance at the time of substrate production, solvent resistance, and further excellent as a permanent resist.

以下,根據較好之實施形態,對本發明進行詳細說明。Hereinafter, the present invention will be described in detail based on preferred embodiments.

首先,對作為本發明之(A)成分之矽氧樹脂進行說明。First, the epoxy resin which is the component (A) of the present invention will be described.

作為本發明之(A)成分之矽氧樹脂於1分子中具有至少2個以上述通式(1)所表示之基。The oxime resin which is the component (A) of the present invention has at least two groups represented by the above formula (1) in one molecule.

於上述通式(1)中,R1 表示可具有取代烴基之碳數1~10之伸烷基。作為碳數1~10之伸烷基,可列舉:亞甲基、伸乙基、伸丙基、伸丁基、伸戊基、伸己基、伸庚基、伸辛基、伸壬基及伸癸基,就耐熱性而言,較好的是碳數少,就工業上獲得之容易程度而言,較好的是伸乙基、伸丙基及伸丁基,進而較好的是伸乙基及伸丁基,最好的是伸乙基。作為R1 中可具有之取代烴基,例如可列舉:甲基、乙基、丙基、異丙基、丁基、異丁基、第三丁基、苯基等,就耐熱性而言,較好的是不具有取代烴基。In the above formula (1), R 1 represents an alkylene group having 1 to 10 carbon atoms which may have a substituted hydrocarbon group. Examples of the alkylene group having a carbon number of 1 to 10 include a methylene group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, a decyl group, a hydrazine group, and a stretching group. In the case of heat resistance, it is preferred that the carbon number is small, and in terms of ease of industrial availability, it is preferred to extend ethyl, propyl and butyl, and more preferably Base and butyl, the best is extended ethyl. Examples of the substituted hydrocarbon group which may be contained in R 1 include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a t-butyl group, a phenyl group, and the like, and in terms of heat resistance, Preferably, it does not have a substituted hydrocarbon group.

R2 表示碳數1~4之烷基。作為碳數1~4之烷基,可列舉:甲基、乙基、丙基、異丙基、丁基、異丁基、第二丁基、第三丁基等。作為R2 ,就耐熱性而言,較好的是碳數1~3之烷基,進而較好的是甲基及乙基,最好的是甲基。R 2 represents an alkyl group having 1 to 4 carbon atoms. Examples of the alkyl group having 1 to 4 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a second butyl group, and a third butyl group. R 2 is preferably an alkyl group having 1 to 3 carbon atoms, more preferably a methyl group or an ethyl group, and most preferably a methyl group.

a表示0或1~4之數,b表示1~3之數,但a+b不超過5。於a為2~4之數時,R2 可為相同之烷基,亦可為不同之烷基。就耐熱性而言,a較好的是0或1之數,進而較好的是0。就工業上獲得之容易程度而言,b較好的是1或2之數,進而較好的是1。a represents 0 or 1~4, b represents 1~3, but a+b does not exceed 5. When a is a number from 2 to 4, R 2 may be the same alkyl group or a different alkyl group. In terms of heat resistance, a is preferably 0 or 1, and more preferably 0. In terms of the ease of industrial availability, b is preferably 1 or 2, and more preferably 1.

以上述通式(1)所表示之基之羧基的位置並無特別限定,就耐熱性提高之方面而言,較好的是1個羧基相對於R2 而位於對位。The position of the carboxyl group of the group represented by the above formula (1) is not particularly limited, and from the viewpoint of improving heat resistance, it is preferred that one carboxyl group is located in the para position with respect to R 2 .

本發明之於1分子中具有至少2個以通式(1)所表示之基的矽氧樹脂例如可藉由如下方法等而製造:使具有以通式(1)所表示之基之烷氧基矽烷化合物(以下稱作化合物1AS)或氯矽烷化合物(以下稱作化合物1CS)進行水解‧縮合反應;或者使含有具有與Si-H基之反應性之碳-碳雙鍵及芳香族羧基的化合物(以下稱作化合物DAC)與於1分子中具有至少2個Si-H基之化合物進行矽氫化反應。The oxime resin having at least two groups represented by the formula (1) in one molecule of the present invention can be produced, for example, by the following method or the like: an alkoxy group having a group represented by the formula (1) The decane compound (hereinafter referred to as the compound 1AS) or the chlorosilane compound (hereinafter referred to as the compound 1CS) undergoes a hydrolysis ‧ condensation reaction; or a carbon-carbon double bond having an reactivity with the Si—H group and an aromatic carboxyl group The compound (hereinafter referred to as compound DAC) is subjected to a hydrazine hydrogenation reaction with a compound having at least two Si-H groups in one molecule.

首先,對使化合物1AS或化合物1CS進行水解‧縮合反應之方法進行說明。First, a method of subjecting the compound 1AS or the compound 1CS to hydrolysis and condensation reaction will be described.

化合物1AS或化合物1CS之水解‧縮合反應若進行所謂溶膠-凝膠反應即可,具體可列舉於溶劑中使用酸或鹼等觸媒而進行水解‧縮合反應的方法。The hydrolysis/densation reaction of the compound 1AS or the compound 1CS may be carried out by a so-called sol-gel reaction, and specific examples thereof include a method of performing a hydrolysis and a condensation reaction using a catalyst such as an acid or a base in a solvent.

該情形時所使用之溶劑並無特別限定,具體可列舉:水、甲醇、乙醇、正丙醇、異丙醇、正丁醇、異丁醇、丙酮、甲基乙基酮、二烷、四氫呋喃等,可使用該等之1種,亦可混合使用2種以上。The solvent to be used in this case is not particularly limited, and specific examples thereof include water, methanol, ethanol, n-propanol, isopropanol, n-butanol, isobutanol, acetone, methyl ethyl ketone, and One type of these may be used for the alkane, tetrahydrofuran or the like, or two or more types may be used in combination.

烷氧基矽烷或氯矽烷之水解‧縮合反應係藉由如下方式進行:烷氧基矽烷或氯矽烷藉由水而水解,生成矽醇基(Si-OH基),該生成之矽醇基彼此、矽醇基與烷氧基矽烷基、或矽醇基與氯矽烷基進行縮合。The hydrolysis/condensation reaction of alkoxydecane or chlorodecane is carried out by hydrolyzing alkoxydecane or chlorodecane by water to form a sterol group (Si-OH group), and the resulting sterol groups are mutually The sterol group is condensed with an alkoxyalkyl group or a decyl group with a chloroalkyl group.

於水解‧縮合反應中,可使用烷氧基矽烷化合物與氯矽烷化合物中之任一者,亦可混合使用各化合物,由於容易控制反應及除去副產物,故較好的是使用作為烷氧基矽烷化合物之化合物1AS。In the hydrolysis/condensation reaction, any one of an alkoxydecane compound and a chlorodecane compound may be used, or each compound may be used in combination, and since it is easy to control the reaction and remove by-products, it is preferably used as an alkoxy group. Compound 1AS of a decane compound.

為了使該水解反應快速進行,較好的是添加適量之水,亦可將觸媒溶解於水中而添加。又,藉由空氣中之水分、或水以外之溶劑中亦含有之微量的水,亦可進行該水解反應。In order to carry out the hydrolysis reaction rapidly, it is preferred to add an appropriate amount of water or to add the catalyst in water. Further, the hydrolysis reaction can be carried out by water in the air or a trace amount of water contained in a solvent other than water.

該水解‧縮合反應中所使用之酸或鹼等觸媒若為促進水解‧縮合反應者即可,具體可列舉:鹽酸、磷酸、硫酸等無機酸類,甲酸、乙酸、草酸、檸檬酸、甲磺酸、苯磺酸、對甲苯磺酸、磷酸單異丙酯等有機酸類,氫氧化鈉、氫氧化鉀、氫氧化鋰、氨等無機鹼類,三甲胺、三乙胺、單乙醇胺、二乙醇胺等胺化合物(有機鹼)類等;可使用該等之1種,亦可併用2種以上。The catalyst such as an acid or a base used in the hydrolysis/condensation reaction may be a catalyst for promoting hydrolysis and condensation, and specific examples thereof include inorganic acids such as hydrochloric acid, phosphoric acid, and sulfuric acid, formic acid, acetic acid, oxalic acid, citric acid, and methanesulfonic acid. Organic acids such as acid, benzenesulfonic acid, p-toluenesulfonic acid, monoisopropyl phosphate, inorganic bases such as sodium hydroxide, potassium hydroxide, lithium hydroxide, ammonia, trimethylamine, triethylamine, monoethanolamine, diethanolamine An amine compound (organic base) or the like may be used, and one type of these may be used, or two or more types may be used in combination.

水解,縮合反應之溫度係根據溶劑之種類、觸媒之種類及量等而變化,較好的是0~80℃,進而較好的是5~50℃,最好的是8~30℃。The temperature of the hydrolysis and the condensation reaction varies depending on the kind of the solvent, the kind and amount of the catalyst, and the like, and is preferably 0 to 80 ° C, more preferably 5 to 50 ° C, and most preferably 8 to 30 ° C.

於化合物1AS中,作為R1 為伸乙基、a=0、b=1、且於對位含有羧基之化合物,例如可列舉:2-(4-羧基苯基)乙基三甲氧基矽烷、2-(4-羧基苯基)乙基三乙氧基矽烷等三烷氧基矽烷類;2-(4-羧基苯基)乙基二甲氧基甲基矽烷、2-(4-羧基苯基)乙基二乙氧基甲基矽烷、2-(4-羧基苯基)乙基二甲氧基乙基矽烷、2-(4-羧基苯基)乙基二乙氧基乙基矽烷、2-(4-羧基苯基)乙基二甲氧基丙基矽烷、2-(4-羧基苯基)乙基二乙氧基丙基矽烷、2-(4-羧基苯基)乙基二甲氧基丁基矽烷、2-(4-羧基苯基)乙基二乙氧基丁基矽烷、2-(4-羧基苯基)乙基二甲氧基異丁基矽烷、2-(4-羧基苯基)乙基二乙氧基異丁基矽烷、2-(4-羧基苯基)乙基二甲氧基環己基矽烷、2-(4-羧基苯基)乙基二乙氧基環己基矽烷等二烷氧基矽烷類;2-(4-羧基苯基)乙基甲氧基二甲基矽烷、2-(4-羧基苯基)乙基乙氧基二甲基矽烷、2-(4-羧基苯基)乙基甲氧基二乙基矽烷、2-(4-羧基苯基)乙基乙氧基二乙基矽烷、2-(4-羧基苯基)乙基甲氧基二丙基矽烷、2-(4-羧基苯基)乙基乙氧基二丙基矽烷、2-(4-羧基苯基)乙基甲氧基二丁基矽烷、2-(4-羧基苯基)乙基乙氧基二丁基矽烷、2-(4-羧基苯基)乙基甲氧基二異丁基矽烷、2-(4-羧基苯基)乙基乙氧基二異丁基矽烷、2-(4-羧基苯基)乙基甲氧基二環己基矽烷、2-(4-羧基苯基)乙基乙氧基二環己基矽烷等單烷氧基矽烷類。In the compound 1AS, examples of the compound in which R 1 is an exoethyl group, a=0, b=1, and a carboxyl group in the para position include 2-(4-carboxyphenyl)ethyltrimethoxynonane. Trialkoxy decanes such as 2-(4-carboxyphenyl)ethyltriethoxydecane; 2-(4-carboxyphenyl)ethyldimethoxymethylnonane, 2-(4-carboxybenzene Ethyl diethoxymethyl decane, 2-(4-carboxyphenyl)ethyldimethoxyethyl decane, 2-(4-carboxyphenyl)ethyldiethoxyethyl decane, 2-(4-carboxyphenyl)ethyldimethoxypropyl decane, 2-(4-carboxyphenyl)ethyldiethoxypropyl decane, 2-(4-carboxyphenyl)ethyldi Methoxybutyl decane, 2-(4-carboxyphenyl)ethyldiethoxybutyl decane, 2-(4-carboxyphenyl)ethyldimethoxyisobutyl decane, 2-(4 -carboxyphenyl)ethyldiethoxyisobutyldecane, 2-(4-carboxyphenyl)ethyldimethoxycyclohexyldecane, 2-(4-carboxyphenyl)ethyldiethoxy a dialkoxy decane such as cyclohexyldecane; 2-(4-carboxyphenyl)ethyl methoxy dimethyl decane, 2-(4-carboxyphenyl)ethyl ethoxy dimethyl decane, 2 -(4-carboxyphenyl)B Methoxy diethyl decane, 2-(4-carboxyphenyl)ethyl ethoxydiethyl decane, 2-(4-carboxyphenyl)ethyl methoxydipropyl decane, 2-(4 -carboxyphenyl)ethylethoxydipropylnonane, 2-(4-carboxyphenyl)ethylmethoxydibutylnonane, 2-(4-carboxyphenyl)ethylethoxydibutyl Base decane, 2-(4-carboxyphenyl)ethyl methoxy diisobutyl decane, 2-(4-carboxyphenyl)ethyl ethoxy diisobutyl decane, 2-(4-carboxybenzene Monoalkoxy decane such as ethyl methoxy dicyclohexyl decane or 2-(4-carboxyphenyl)ethyl ethoxy dicyclohexyl decane.

於該等化合物中,就反應性良好且耐熱性亦變得良好的方面而言,較好的是2-(4-羧基苯基)乙基三甲氧基矽烷、2-(4-羧基苯基)乙基三乙氧基矽烷、2-(4-羧基苯基)乙基二甲氧基甲基矽烷、2-(4-羧基苯基)乙基二乙氧基甲基矽烷、2-(4-羧基苯基)乙基二甲氧基乙基矽烷、2-(4-羧基苯基)乙基二乙氧基乙基矽烷、2-(4-羧基苯基)乙基三甲氧基矽烷、2-(4-羧基苯基)乙基三乙氧基矽烷,進而較好的是2-(4-羧基苯基)乙基三甲氧基矽烷、2-(4-羧基苯基)乙基二甲氧基甲基矽烷、2-(4-羧基苯基)乙基二甲氧基乙基矽烷,最好的是2-(4-羧基苯基)乙基三甲氧基矽烷、2-(4-羧基苯基)乙基二甲氧基甲基矽烷。化合物1AS可僅使用1種,亦可併用2種以上。Among these compounds, 2-(4-carboxyphenyl)ethyltrimethoxydecane and 2-(4-carboxyphenyl group are preferred in terms of good reactivity and good heat resistance. Ethyltriethoxydecane, 2-(4-carboxyphenyl)ethyldimethoxymethylnonane, 2-(4-carboxyphenyl)ethyldiethoxymethyldecane, 2-( 4-carboxyphenyl)ethyldimethoxyethyl decane, 2-(4-carboxyphenyl)ethyldiethoxyethyl decane, 2-(4-carboxyphenyl)ethyltrimethoxydecane 2-(4-carboxyphenyl)ethyltriethoxydecane, further preferably 2-(4-carboxyphenyl)ethyltrimethoxydecane, 2-(4-carboxyphenyl)ethyl Dimethoxymethyldecane, 2-(4-carboxyphenyl)ethyldimethoxyethyl decane, most preferably 2-(4-carboxyphenyl)ethyltrimethoxydecane, 2-( 4-carboxyphenyl)ethyldimethoxymethylnonane. The compound 1AS may be used alone or in combination of two or more.

於化合物1CS中,作為R1 為伸乙基、a=0、b=1、且於對位含有羧基之化合物,例如可列舉:2-(4-羧基苯基)乙基三氯矽烷等三氯矽烷類;2-(4-羧基苯基)乙基二氯甲基矽烷、2-(4-羧基苯基)乙基二氯乙基矽烷、2-(4-羧基苯基)乙基二氯丙基矽烷、2-(4-羧基苯基)乙基二氯丁基矽烷、2-(4-羧基苯基)乙基二氯異丁基矽烷、2-(4-羧基苯基)乙基二氯環己基矽烷等二氯矽烷類;2-(4-羧基苯基)乙基氯二甲基矽烷、2-(4-羧基苯基)乙基氯二乙基矽烷、2-(4-羧基苯基)乙基氯二丙基矽烷、2-(4-羧基苯基)乙基氯二丁基矽烷、2-(4-羧基苯基)乙基氯二異丁基矽烷、2-(4-羧基苯基)乙基氯二環己基矽烷等單氯矽烷類。In the compound 1CS, examples of the compound in which R 1 is an exoethyl group, a=0, b=1, and a carboxyl group is contained in the para position include, for example, 2-(4-carboxyphenyl)ethyltrichlorodecane. Chlorodecane; 2-(4-carboxyphenyl)ethyldichloromethylnonane, 2-(4-carboxyphenyl)ethyldichloroethyldecane, 2-(4-carboxyphenyl)ethyldi Chloropropyl decane, 2-(4-carboxyphenyl)ethyldichlorobutyl decane, 2-(4-carboxyphenyl)ethyldichloroisobutyl decane, 2-(4-carboxyphenyl) Dichlorodecanes such as dichlorocyclohexyldecane; 2-(4-carboxyphenyl)ethyl chlorodimethyl decane, 2-(4-carboxyphenyl)ethyl chlorodiethyl decane, 2-(4 -carboxyphenyl)ethyl chlorodipropyl decane, 2-(4-carboxyphenyl)ethyl chlorodibutyl decane, 2-(4-carboxyphenyl)ethyl chlorodiisobutyl decane, 2- Monochlorodecanes such as (4-carboxyphenyl)ethylchlorodicyclohexyldecane.

於該等化合物中,就反應性良好且耐熱性亦變得良好的方面而言,較好的是2-(4-羧基苯基)乙基三氯矽烷、2-(4-羧基苯基)乙基二氯甲基矽烷、2-(4-羧基苯基)乙基二氯乙基矽烷,進而較好的是2-(4-羧基苯基)乙基三氯矽烷、2-(4-羧基苯基)乙基二氯甲基矽烷。化合物1CS可僅使用1種,亦可併用2種以上。Among these compounds, 2-(4-carboxyphenyl)ethyltrichlorodecane and 2-(4-carboxyphenyl) are preferred in terms of good reactivity and good heat resistance. Ethyl dichloromethyl decane, 2-(4-carboxyphenyl)ethyl dichloroethyl decane, more preferably 2-(4-carboxyphenyl)ethyl trichloro decane, 2-(4- Carboxyphenyl)ethyldichloromethylnonane. The compound 1CS may be used alone or in combination of two or more.

上述化合物1AS及化合物1CS之羧基亦可經第三丁基等保護基所保護。例如化合物1AS及化合物1CS之以通式(1)所表示之基如下述通式(1a)The carboxyl group of the above compound 1AS and compound 1CS may also be protected by a protecting group such as a third butyl group. For example, the compound represented by the formula (1) of the compound 1AS and the compound 1CS is represented by the following formula (1a).

[化2][Chemical 2]

(式中,R1 、R2 、a及b與上述通式(1)中之含義相同。)(wherein R 1 , R 2 , a and b have the same meanings as in the above formula (1).)

所示般,羧基可經第三丁酯基所保護。As shown, the carboxyl group can be protected by a third butyl ester group.

上述經保護之化合物可與未經保護之化合物同樣地進行水解‧縮合反應。於保護基為第三丁基之情形時,可於上述水解‧縮合反應之後,於溶劑中視需要使用觸媒,而使第三丁基脫離。The above protected compound can be subjected to hydrolysis and condensation reaction in the same manner as the unprotected compound. In the case where the protecting group is a third butyl group, the third butyl group may be detached after the above hydrolysis/densation reaction, if necessary, using a catalyst in a solvent.

作為此情形時之觸媒,較好的是三氟化硼二乙醚錯合物。As a catalyst in this case, a boron trifluoride diethyl ether complex is preferred.

又,作為溶劑,較好的是於25℃下可溶解1質量%以上之水的有機溶劑。作為上述有機溶劑,例如可列舉:甲醇、乙醇、丙醇、異丙醇等醇類;1-甲氧基-乙醇、1-乙氧基-乙醇、1-丙氧基-乙醇、1-異丙氧基-乙醇、1-丁氧基-乙醇、1-甲氧基-2-丙醇、3-甲氧基-1-丁醇、3-甲氧基-3-甲基-1-丁醇等醚醇類;乙酸1-甲氧基-乙酯、乙酸1-乙氧基-乙酯、乙酸1-甲氧基-2-丙酯、乙酸3-甲氧基-1-丁酯、乙酸3-甲氧基-3-甲基-1-丁酯等醚醇之乙酸酯類;丙酮、甲基乙基酮等酮類;4-羥基-2-丁酮、3-羥基-3-甲基-2-丁酮、4-羥基-2-甲基-2-戊酮(二丙酮醇)等酮醇類;1,4-二烷、四氫呋喃、1,2-二甲氧基乙烷等醚類等。於該等溶劑中,較好的是甲醇、乙醇、丙醇、甲基乙基酮、1,4-二烷、四氫呋喃。Further, as the solvent, an organic solvent capable of dissolving 1% by mass or more of water at 25 ° C is preferred. Examples of the organic solvent include alcohols such as methanol, ethanol, propanol, and isopropanol; 1-methoxy-ethanol, 1-ethoxy-ethanol, 1-propoxy-ethanol, and 1-iso Propoxy-ethanol, 1-butoxy-ethanol, 1-methoxy-2-propanol, 3-methoxy-1-butanol, 3-methoxy-3-methyl-1-butene Ether alcohols such as alcohol; 1-methoxy-ethyl acetate, 1-ethoxy-ethyl acetate, 1-methoxy-2-propyl acetate, 3-methoxy-1-butyl acetate, Acetate of ether alcohols such as 3-methoxy-3-methyl-1-butyl acetate; ketones such as acetone and methyl ethyl ketone; 4-hydroxy-2-butanone, 3-hydroxy-3- Keto alcohols such as methyl-2-butanone and 4-hydroxy-2-methyl-2-pentanone (diacetone alcohol); 1,4-two An ether such as an alkane, tetrahydrofuran or 1,2-dimethoxyethane. Among these solvents, preferred are methanol, ethanol, propanol, methyl ethyl ketone, and 1,4-two. Alkane, tetrahydrofuran.

於使用經保護之化合物作為上述(A)成分之原料之情形時,需要脫離保護基之步驟,製造步驟變得繁雜,但具有難以產生副反應,本發明之永久抗蝕劑之耐熱性、耐化學品性等提高之優點。In the case where a protected compound is used as a raw material of the above component (A), a step of removing the protective group is required, and the production step becomes complicated, but it is difficult to cause a side reaction, and the heat resistance and resistance of the permanent resist of the present invention are resistant. The advantages of improved chemical properties.

繼而,對使含有具有與Si-H基之反應性之碳-碳雙鍵及芳香族羧基的化合物(化合物DAC)與於1分子中具有至少2個Si-H基之化合物進行矽氫化反應的方法進行說明。Then, a compound (compound DAC) containing a carbon-carbon double bond and an aromatic carboxyl group having reactivity with an Si-H group is subjected to a hydrazine hydrogenation reaction with a compound having at least two Si-H groups in one molecule. The method is explained.

作為於1分子中具有至少2個Si-H基之化合物,例如可列舉以下述通式(5)The compound having at least two Si—H groups in one molecule may, for example, be represented by the following formula (5).

[化3][Chemical 3]

(式中,X表示氫原子或甲基,R14 表示可相同亦可不同之甲基或苯基,R15 、R16 及R17 表示可相同亦可不同之碳數1~6之烷基、碳數5~6之環烷基或苯基,q表示0~1000之數,r表示0~1000之數。其中,q為0或1之情形時,X表示氫原子。)(wherein, X represents a hydrogen atom or a methyl group, R 14 represents a methyl group or a phenyl group which may be the same or different, and R 15 , R 16 and R 17 represent an alkyl group which may be the same or different and have a carbon number of 1 to 6 , a cycloalkyl group having a carbon number of 5 to 6 or a phenyl group, q represents a number from 0 to 1000, and r represents a number from 0 to 1000. Wherein, when q is 0 or 1, X represents a hydrogen atom.

所表示之線狀化合物、以及以下述通式(6)The linear compound represented by the following formula (6)

[化4][Chemical 4]

(式中,R18 、R19 及R20 表示可相同亦可不同之碳數1~6之烷基、碳數5~6之環烷基或苯基,S表示2~6之數,t表示s+t成為3~6的0~4之數。)(wherein R 18 , R 19 and R 20 represent an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 5 to 6 carbon atoms or a phenyl group which may be the same or different, and S represents a number of 2 to 6, t Indicates that s+t becomes the number of 0~4 of 3~6.)

所表示之環狀化合物等,就耐熱性提高之方面而言,較好的是以上述通式(6)所表示之環狀化合物。The cyclic compound represented by the above formula (6) is preferably a cyclic compound represented by the above formula (6) in terms of improvement in heat resistance.

於上述通式(5)中,X表示氫原子或甲基,R14 表示可相同亦可不同之甲基或苯基,R15 、R16 及R17 表示可相同亦可不同之碳數1~6之烷基、碳數5~6之環烷基或苯基。作為碳數1~6之烷基,例如可列舉:甲基、乙基、丙基、異丙基、丁基、異丁基、第二丁基、第三丁基、戊基、異戊基、第二戊基、第三戊基、己基、第二己基等,作為碳數5~6之環烷基,例如可列舉:環戊基、環己基、環戊基甲基、甲基環戊基等。In the above formula (5), X represents a hydrogen atom or a methyl group, R 14 represents a methyl group or a phenyl group which may be the same or different, and R 15 , R 16 and R 17 represent a carbon number which may be the same or different. ~6 alkyl, 5 to 6 cycloalkyl or phenyl. Examples of the alkyl group having 1 to 6 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a second butyl group, a third butyl group, a pentyl group, and an isopentyl group. And a second pentyl group, a third pentyl group, a hexyl group, a second hexyl group, etc., and a cycloalkyl group having 5 to 6 carbon atoms, for example, a cyclopentyl group, a cyclohexyl group, a cyclopentylmethyl group, a methylcyclopentane Base.

就於工業上容易獲得的方面而言,R14 較好的是甲基。就對矽氫化反應之影響較少的方面而言,R15 較好的是甲基及乙基,進而較好的是甲基。就本發明之永久抗蝕劑之耐熱性方面而言,R16 及R17 較好的是甲基、乙基及苯基,進而較好的是甲基及苯基,最好的是甲基。R 14 is preferably a methyl group in terms of industrially readily available. In the aspect which has less influence on the hydrogenation reaction, R 15 is preferably a methyl group and an ethyl group, and more preferably a methyl group. In terms of heat resistance of the permanent resist of the present invention, R 16 and R 17 are preferably a methyl group, an ethyl group and a phenyl group, more preferably a methyl group and a phenyl group, and most preferably a methyl group. .

X表示氫原子或甲基,q表示0~1000之數,r表示0~1000之數,於r為0之情形時,X表示氫原子。X represents a hydrogen atom or a methyl group, q represents a number from 0 to 1000, r represents a number from 0 to 1000, and when r is 0, X represents a hydrogen atom.

於上述通式(6)中,R18 、R19 及R20 表示可相同亦可不同之碳數1~6之烷基、碳數5~6之環烷基或苯基。作為碳數1~6之烷基及碳數5~6之環烷基,可列舉以R15 、R16 及R17 所例示之烷基及環烷基。In the above formula (6), R 18 , R 19 and R 20 represent an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 5 to 6 carbon atoms or a phenyl group which may be the same or different. Examples of the alkyl group having 1 to 6 carbon atoms and the cycloalkyl group having 5 to 6 carbon atoms include an alkyl group and a cycloalkyl group exemplified as R 15 , R 16 and R 17 .

就矽氫化之反應性良好的方面而言,R18 較好的是碳數1~6之烷基,進而較好的是甲基及乙基,最好的是甲基。又,就本發明之永久抗蝕劑之耐熱性方面而言,R19 及R20 較好的是甲基、乙基及苯基,進而較好的是甲基及苯基,最好的是甲基。R 18 is preferably an alkyl group having 1 to 6 carbon atoms, more preferably a methyl group and an ethyl group, and most preferably a methyl group. Further, in terms of heat resistance of the permanent resist of the present invention, R 19 and R 20 are preferably a methyl group, an ethyl group and a phenyl group, more preferably a methyl group and a phenyl group, and most preferably methyl.

s表示2~6之數,t表示s+t成為3~6的0~4之數。就工業上容易獲得的方面而言,s+t較好的是4~6,進而較好的是4~5,最好的是4。又,t較好的是0。s represents the number of 2~6, and t represents the number of 0~4 where s+t becomes 3~6. In terms of industrially readily available aspects, s+t is preferably 4-6, and more preferably 4-5, and most preferably 4. Also, t is preferably 0.

作為以上述通式(6)所表示之環狀矽氧烷化合物之具體例,可列舉:2,4,6-三甲基環三矽氧烷、2,4,6-三乙基環三矽氧烷、2,4,6-三苯基環三矽氧烷、2,4,6,8-四甲基環四矽氧烷、2,2,4,6,8-五甲基環四矽氧烷、2,2,4,4,6,8-六甲基環四矽氧烷、2,4,6,8-四乙基環四矽氧烷、2,4,6,8-四苯基環四矽氧烷、2-乙基-4,6,8-三甲基環四矽氧烷、2-苯基-4,6,8-三甲基環四矽氧烷、2,4,6,8,10-五甲基環五矽氧烷、2,4,6,8,10-五乙基環五矽氧烷、2,4,6,8,10-五苯基環五矽氧烷、2,4,6,8,10,12-六甲基環六矽氧烷、2,4,6,8,10,12-六乙基環六矽氧烷、2,4,6,8,10,12-六苯基環六矽氧烷等,就工業上容易獲得的方面而言,較好的是2,4,6,8-四甲基環四矽氧烷及2,4,6,8,10-五甲基環五矽氧烷,進而較好的是2,4,6,8-四甲基環四矽氧烷。Specific examples of the cyclic oxirane compound represented by the above formula (6) include 2,4,6-trimethylcyclotrioxane and 2,4,6-triethylcyclohexane. Oxane, 2,4,6-triphenylcyclotrioxane, 2,4,6,8-tetramethylcyclotetraoxane, 2,2,4,6,8-pentamethylcyclo Tetraoxane, 2,2,4,4,6,8-hexamethylcyclotetraoxane, 2,4,6,8-tetraethylcyclotetraoxane, 2,4,6,8 - tetraphenylcyclotetraoxane, 2-ethyl-4,6,8-trimethylcyclotetraoxane, 2-phenyl-4,6,8-trimethylcyclotetraoxane, 2,4,6,8,10-pentamethylcyclopentaoxane, 2,4,6,8,10-pentaethylcyclopentaoxane, 2,4,6,8,10-pentabenzene Base ring pentaoxane, 2,4,6,8,10,12-hexamethylcyclohexaoxane, 2,4,6,8,10,12-hexaethylcyclohexaoxane, 2 , 4,6,8,10,12-hexaphenylcyclohexaoxane, etc., in terms of industrially readily available, 2,4,6,8-tetramethylcyclotetrazepine is preferred. Alkane and 2,4,6,8,10-pentamethylcyclopentaoxane, and more preferably 2,4,6,8-tetramethylcyclotetraoxane.

繼而,對化合物DAC進行說明。作為化合物DAC,例如可列舉:2-乙烯基苯甲酸、3-乙烯基苯甲酸、4-乙烯基苯甲酸、4-(1-苯基乙烯基)苯甲酸、2-甲基-4-乙烯基苯甲酸、2-烯丙基苯甲酸、3-烯丙基苯甲酸、4-烯丙基苯甲酸、2-異丙烯基苯甲酸、3-異丙烯基苯甲酸、4-異丙烯基苯甲酸、4-(3-丁烯基)苯甲酸、4-(4-戊烯基)苯甲酸、4-(5-己烯基)苯甲酸、4-(6-庚烯基)苯甲酸、4-(7-辛烯基)苯甲酸、4-(8-壬烯基)苯甲酸、4-(9-癸烯基)苯甲酸、2-乙烯基-1,4-苯二甲酸、5-乙烯基-1,3-苯二甲酸等。Next, the compound DAC will be described. Examples of the compound DAC include 2-vinylbenzoic acid, 3-vinylbenzoic acid, 4-vinylbenzoic acid, 4-(1-phenylvinyl)benzoic acid, and 2-methyl-4-ethene. Benzoic acid, 2-allylbenzoic acid, 3-allylbenzoic acid, 4-allylbenzoic acid, 2-isopropenylbenzoic acid, 3-isopropenylbenzoic acid, 4-isopropenylbenzene Formic acid, 4-(3-butenyl)benzoic acid, 4-(4-pentenyl)benzoic acid, 4-(5-hexenyl)benzoic acid, 4-(6-heptenyl)benzoic acid, 4-(7-octenyl)benzoic acid, 4-(8-decenyl)benzoic acid, 4-(9-nonenyl)benzoic acid, 2-vinyl-1,4-phthalic acid, 5 - Vinyl-1,3-phthalic acid, and the like.

於該等化合物DAC中,就工業上容易獲得的方面、本發明之永久抗蝕劑之耐熱性方面而言,較好的是2-乙烯基苯甲酸、3-乙烯基苯甲酸、4-乙烯基苯甲酸、2-烯丙基苯甲酸、4-烯丙基苯甲酸、2-異丙烯基苯甲酸、4-異丙烯基苯甲酸,進而較好的是2-乙烯基苯甲酸、4-乙烯基苯甲酸,最好的是4-乙烯基苯甲酸。化合物DAC可僅使用1種,亦可使用2種以上。Among these compound DACs, 2-vinylbenzoic acid, 3-vinylbenzoic acid, 4-ethylene are preferred in terms of industrially readily available aspects and heat resistance of the permanent resist of the present invention. Benzoic acid, 2-allylbenzoic acid, 4-allylbenzoic acid, 2-isopropenylbenzoic acid, 4-isopropenylbenzoic acid, further preferably 2-vinylbenzoic acid, 4- Vinylbenzoic acid, the most preferred being 4-vinylbenzoic acid. The compound DAC may be used alone or in combination of two or more.

化合物DAC之芳香族羧基可視需要經第三丁基等保護基所保護。例如芳香族羧基於經第三丁基所保護之情形時,成為第三丁酯,於矽氫化反應之後,可藉由上述方法使第三丁基脫離。The aromatic carboxyl group of the compound DAC may be protected by a protecting group such as a third butyl group. For example, when the aromatic carboxyl group is protected by the third butyl group, it becomes a third butyl ester, and after the hydrogenation reaction, the third butyl group can be removed by the above method.

使化合物DAC與於1分子中具有至少2個Si-H基之化合物進行矽氫化反應之條件可以公知條件進行。例如可於甲苯、異丙醇、丙酮、甲基乙基酮、甲基異丁基酮、1,2-二甲氧基乙烷、1,4-二烷、1-甲氧基-2-丙醇乙酸酯等溶劑中,視需要以氯鉑酸、鉑-烯烴錯合物、鉑-羰基乙烯基甲基錯合物(Ossko觸媒)、鉑-二乙烯基四甲基二矽氧烷錯合物(Karstedt觸媒)等鉑系觸媒作為觸媒,於反應溫度20~130℃、較好的是50~80℃下進行反應,反應結束後,藉由對溶劑進行減壓蒸餾除去,而自反應液中獲得目標物。The conditions for subjecting the compound DAC to a hydrazine hydrogenation reaction with a compound having at least two Si-H groups in one molecule can be carried out under known conditions. For example, it can be used in toluene, isopropanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, 1,2-dimethoxyethane, 1,4-two In a solvent such as an alkane or 1-methoxy-2-propanol acetate, chloroplatinic acid, a platinum-olefin complex, a platinum-carbonylvinylmethyl complex (Ossko catalyst), or platinum may be used as needed. a platinum-based catalyst such as a divinyltetramethyldioxane complex (Karstedt catalyst) is used as a catalyst, and the reaction is carried out at a reaction temperature of 20 to 130 ° C, preferably 50 to 80 ° C, and the reaction is completed. Thereafter, the solvent was subjected to distillation under reduced pressure to obtain a target product from the reaction liquid.

化合物DAC之羧基可與化合物1AS及化合物1CS之情形同樣地,如上述通式(1a)所示般,經第三丁基等保護基所保護。又,經保護基所保護之化合物可與未經保護之化合物同樣地進行矽氫化反應,且可藉由與化合物1AS及化合物1CS之情形相同之方法而脫離保護基。The carboxyl group of the compound DAC can be protected by a protecting group such as a third butyl group as in the case of the compound 1AS and the compound 1CS, as shown in the above formula (1a). Further, the compound protected by the protecting group can be subjected to a hydrazine hydrogenation reaction in the same manner as the unprotected compound, and the protective group can be removed by the same method as in the case of the compound 1AS and the compound 1CS.

本發明之(A)成分之質量平均分子量過小時,存在使用正型感光性組合物來形成永久抗蝕劑時之成膜性變得不良之情形,過大時,存在對鹼性顯影液之溶解性或分散性降低,鹼性顯影後之基板表面之抗蝕劑殘渣增加之情形,又,就操作性及效率等工業化適應性之觀點而言,本發明之(A)成分之質量平均分子量較好的是600~50000,進而較好的是800~20000,最好的是1000~10000。再者,於本發明中,所謂質量平均分子量,係指以四氫呋喃(以下稱作THF(tetrahydrofuran))作為溶劑而進行GPC(Gel Permeation Chromatography,凝膠滲透層析)分析之情形時的聚苯乙烯換算之質量平均分子量。When the mass average molecular weight of the component (A) of the present invention is too small, the film forming property when the permanent photosensitive composition is formed by using the positive photosensitive composition becomes poor, and when it is too large, the alkaline developing solution is dissolved. The property or the dispersibility is lowered, the resist residue on the surface of the substrate after the alkali development is increased, and the mass average molecular weight of the component (A) of the present invention is higher in terms of industrial suitability such as workability and efficiency. The good is 600~50000, and then the better is 800~20000, and the best is 1000~10000. In the present invention, the mass average molecular weight refers to polystyrene in the case of GPC (Gel Permeation Chromatography) analysis using tetrahydrofuran (hereinafter referred to as THF (tetrahydrofuran)) as a solvent. The mass average molecular weight converted.

本發明之(A)成分中所含之以通式(1)所表示之基之個數較好的是每1分子中為2~300,進而較好的是4~250,最好的是6~200。The number of the groups represented by the formula (1) contained in the component (A) of the present invention is preferably from 2 to 300, more preferably from 4 to 250, per molecule. 6~200.

又,本發明之(A)成分中所含之以通式(1)所表示之基之量較好的是1~60質量%,進而較好的是3~55質量%,最好的是5~50質量%。Further, the amount of the group represented by the formula (1) contained in the component (A) of the present invention is preferably from 1 to 60% by mass, more preferably from 3 to 55% by mass, most preferably 5 to 50% by mass.

就本發明之永久抗蝕劑之密著性提高之方面而言,本發明之(A)成分較好的是進而於1分子中具有至少1個以下述通式(2)所表示之基:In the aspect of improving the adhesion of the permanent resist of the present invention, the component (A) of the present invention preferably further has at least one group represented by the following formula (2) in one molecule:

[化5][Chemical 5]

(式中,R3 表示可具有取代烴基之碳數1~10之伸烷基,R4 表示碳數1~4之烷基,c表示0或1~4之數,d表示1~3之數,但c+d不超過5)。(wherein R 3 represents an alkylene group having 1 to 10 carbon atoms which may have a substituted hydrocarbon group, R 4 represents an alkyl group having 1 to 4 carbon atoms, c represents 0 or 1 to 4, and d represents 1 to 3; Number, but c+d does not exceed 5).

於上述通式(2)中,R3 表示可具有取代烴基之碳數1~10之伸烷基。作為碳數1~10之伸烷基,可列舉以R1 所例示之伸烷基,就工業上獲得之容易程度而言,較好的是伸乙基、伸丙基及伸丁基,進而較好的是伸乙基及伸丁基,最好的是伸乙基。作為R3 中可具有之取代烴基,可列舉以R1 所例示之烴基等,但就耐熱性方面而言,較好的是不具有取代烴基。R1 與R3 可相同亦可不同。In the above formula (2), R 3 represents an alkylene group having 1 to 10 carbon atoms which may have a substituted hydrocarbon group. The alkylene group having a carbon number of 1 to 10 may, for example, be an alkylene group exemplified as R 1 , and in terms of ease of industrial availability, it is preferably an ethyl group, a propyl group and a butyl group. Preferred are ethyl and butyl groups, and the most preferred ones are ethyl groups. The substituted hydrocarbon group which may be contained in R 3 may, for example, be a hydrocarbon group exemplified as R 1 , but it is preferred to have no substituted hydrocarbon group in terms of heat resistance. R 1 and R 3 may be the same or different.

R4 表示碳數1~4之烷基。作為碳數1~4之烷基,可列舉以R2 所例示之烷基等。作為R4 ,就耐熱性方面而言,較好的是碳數1~3之烷基,進而較好的是甲基及乙基,最好的是甲基。R2 與R4 可相同亦可不同。R 4 represents an alkyl group having 1 to 4 carbon atoms. Examples of the alkyl group having 1 to 4 carbon atoms include an alkyl group exemplified as R 2 . As R 4 , in terms of heat resistance, an alkyl group having 1 to 3 carbon atoms is preferable, and a methyl group and an ethyl group are more preferable, and a methyl group is most preferable. R 2 and R 4 may be the same or different.

c表示0或1~4之數,d表示1~3之數,但c+d不超過5。c為2~4之數時,R4 可為相同之烷基,亦可為不同之烷基。就耐熱性方面而言,c較好的是0或1之數,進而較好的是0。就工業上獲得之容易程度而言,d較好的是1或2之數,進而較好的是1。c means 0 or 1~4, d means 1~3, but c+d does not exceed 5. When c is a number of 2 to 4, R 4 may be the same alkyl group or a different alkyl group. In terms of heat resistance, c is preferably 0 or 1, and more preferably 0. In terms of ease of industrial availability, d is preferably 1 or 2, and more preferably 1.

以上述通式(2)所表示之基之酚性羥基之位置並無特別限定,就耐熱性提高之方面而言,較好的是1個酚性羥基相對於R4 而位於對位。The position of the phenolic hydroxyl group of the group represented by the above formula (2) is not particularly limited, and in terms of improvement in heat resistance, it is preferred that one phenolic hydroxyl group is located in alignment with respect to R 4 .

具有以上述通式(2)所表示之基之(A)成分可藉由如下方法等而製造:使化合物1AS或化合物1CS與具有以上述通式(2)所表示之基之烷氧基矽烷化合物(以下稱作化合物2AS)或氯矽烷化合物(以下稱作化合物2CS)進行水解‧縮合反應;或者使化合物DAC、及含有具有與Si-H基之反應性之碳-碳雙鍵及酚性羥基的化合物(以下稱作化合物DAH),與於1分子中具有至少2個Si-H基之化合物進行矽氫化反應。The component (A) having a group represented by the above formula (2) can be produced by subjecting the compound 1AS or the compound 1CS to an alkoxydecane having a group represented by the above formula (2) The compound (hereinafter referred to as compound 2AS) or the chlorodecane compound (hereinafter referred to as compound 2CS) undergoes hydrolysis and condensation reaction; or the compound DAC and the carbon-carbon double bond having reactivity with the Si-H group and phenolic property The hydroxy compound (hereinafter referred to as compound DAH) is subjected to a hydrazine hydrogenation reaction with a compound having at least two Si-H groups in one molecule.

首先,對使化合物1AS或化合物1CS與化合物2AS或化合物2CS進行水解‧縮合反應之方法進行說明。First, a method of subjecting the compound 1AS or the compound 1CS to the hydrolysis or ‧ condensation reaction of the compound 2AS or the compound 2CS will be described.

於化合物2AS中,作為R3 為伸乙基、c=0、d=1、且於對位含有羥基者,例如可列舉:2-(4-羥基苯基)乙基三甲氧基矽烷、2-(4-羥基苯基)乙基三乙氧基矽烷等三烷氧基矽烷類;2-(4-羥基苯基)乙基二甲氧基甲基矽烷、2-(4-羥基苯基)乙基二乙氧基甲基矽烷、2-(4-羥基苯基)乙基二甲氧基乙基矽烷、2-(4-羥基苯基)乙基二乙氧基乙基矽烷、2-(4-羥基苯基)乙基二甲氧基丙基矽烷、2-(4-羥基苯基)乙基二乙氧基丙基矽烷、2-(4-羥基苯基)乙基二甲氧基丁基矽烷、2-(4-羥基苯基)乙基二乙氧基丁基矽烷、2-(4-羥基苯基)乙基二甲氧基異丁基矽烷、2-(4-羥基苯基)乙基二乙氧基異丁基矽烷、2-(4-羥基苯基)乙基二甲氧基環己基矽烷、2-(4-羥基苯基)乙基二乙氧基環己基矽烷等二烷氧基矽烷類;2-(4-羥基苯基)乙基甲氧基二甲基矽烷、2-(4-羥基苯基)乙基乙氧基二甲基矽烷、2-(4-羥基苯基)乙基甲氧基二乙基矽烷、2-(4-羥基苯基)乙基乙氧基二乙基矽烷、2-(4-羥基苯基)乙基甲氧基二丙基矽烷、2-(4-羥基苯基)乙基乙氧基二丙基矽烷、2-(4-羥基苯基)乙基甲氧基二丁基矽烷、2-(4-羥基苯基)乙基乙氧基二丁基矽烷、2-(4-羥基苯基)乙基甲氧基二異丁基矽烷、2-(4-羥基苯基)乙基乙氧基二異丁基矽烷、2-(4-羥基苯基)乙基甲氧基二環己基矽烷、2-(4-羥基苯基)乙基乙氧基二環己基矽烷等單烷氧基矽烷類。In the compound 2AS, as R 3 is an exoethyl group, c=0, d=1, and a hydroxyl group is contained in the para position, for example, 2-(4-hydroxyphenyl)ethyltrimethoxydecane, 2 is exemplified. a trialkoxynonane such as -(4-hydroxyphenyl)ethyltriethoxydecane; 2-(4-hydroxyphenyl)ethyldimethoxymethylnonane, 2-(4-hydroxyphenyl) Ethyldiethoxymethylnonane, 2-(4-hydroxyphenyl)ethyldimethoxyethyl decane, 2-(4-hydroxyphenyl)ethyldiethoxyethyl decane, 2 -(4-hydroxyphenyl)ethyldimethoxypropyl decane, 2-(4-hydroxyphenyl)ethyldiethoxypropyl decane, 2-(4-hydroxyphenyl)ethyl dimethyl Oxybutyl decane, 2-(4-hydroxyphenyl)ethyldiethoxybutyl decane, 2-(4-hydroxyphenyl)ethyldimethoxyisobutyl decane, 2-(4- Hydroxyphenyl)ethyldiethoxyisobutylnonane, 2-(4-hydroxyphenyl)ethyldimethoxycyclohexyldecane, 2-(4-hydroxyphenyl)ethyldiethoxycyclo a dialkoxy decane such as hexyl decane; 2-(4-hydroxyphenyl)ethyl methoxy dimethyl decane, 2-(4-hydroxyphenyl)ethyl ethoxy dimethyl decane, 2- (4-hydroxyphenyl)ethyl methoxy Diethyldecane, 2-(4-hydroxyphenyl)ethylethoxydiethyldecane, 2-(4-hydroxyphenyl)ethylmethoxydipropylnonane, 2-(4-hydroxybenzene Ethyl ethoxy dipropyl decane, 2-(4-hydroxyphenyl)ethyl methoxy dibutyl decane, 2-(4-hydroxyphenyl)ethyl ethoxy dibutyl decane, 2-(4-hydroxyphenyl)ethyl methoxy diisobutyl decane, 2-(4-hydroxyphenyl)ethyl ethoxy diisobutyl decane, 2-(4-hydroxyphenyl) Monoalkoxydecanes such as methoxycyclodicyclohexyldecane and 2-(4-hydroxyphenyl)ethylethoxydicyclohexyldecane.

於該等化合物中,就反應性良好且耐熱性亦變得良好的方面而言,較好的是2-(4-羥基苯基)乙基三甲氧基矽烷、2-(4-羥基苯基)乙基三乙氧基矽烷、2-(4-羥基苯基)乙基二甲氧基甲基矽烷、2-(4-羥基苯基)乙基二乙氧基甲基矽烷、2-(4-羥基苯基)乙基二甲氧基乙基矽烷、2-(4-羥基苯基)乙基二乙氧基乙基矽烷、2-(4-羥基苯基)乙基三甲氧基矽烷、2-(4-羥基苯基)乙基三乙氧基矽烷,進而較好的是2-(4-羥基苯基)乙基三甲氧基矽烷、2-(4-羥基苯基)乙基二甲氧基甲基矽烷、2-(4-羥基苯基)乙基二甲氧基乙基矽烷,最好的是2-(4-羥基苯基)乙基三甲氧基矽烷、2-(4-羥基苯基)乙基二甲氧基甲基矽烷。化合物2AS可僅使用1種,亦可使用2種以上。Among these compounds, 2-(4-hydroxyphenyl)ethyltrimethoxydecane and 2-(4-hydroxyphenyl group are preferred in terms of good reactivity and good heat resistance. Ethyltriethoxydecane, 2-(4-hydroxyphenyl)ethyldimethoxymethylnonane, 2-(4-hydroxyphenyl)ethyldiethoxymethyldecane, 2-( 4-hydroxyphenyl)ethyldimethoxyethyl decane, 2-(4-hydroxyphenyl)ethyldiethoxyethyl decane, 2-(4-hydroxyphenyl)ethyltrimethoxydecane 2-(4-hydroxyphenyl)ethyltriethoxydecane, further preferably 2-(4-hydroxyphenyl)ethyltrimethoxydecane, 2-(4-hydroxyphenyl)ethyl Dimethoxymethyldecane, 2-(4-hydroxyphenyl)ethyldimethoxyethyl decane, most preferably 2-(4-hydroxyphenyl)ethyltrimethoxydecane, 2-( 4-hydroxyphenyl)ethyldimethoxymethylnonane. The compound 2AS may be used alone or in combination of two or more.

於化合物2CS中,作為R3 為伸乙基、c=0、d=1、且於對位含有羥基者,例如可列舉:2-(4-羥基苯基)乙基三氯矽烷等三氯矽烷類;2-(4-羥基苯基)乙基二氯甲基矽烷、2-(4-羥基苯基)乙基二氯乙基矽烷、2-(4-羥基苯基)乙基二氯丙基矽烷、2-(4-羥基苯基)乙基二氯丁基矽烷、2-(4-羥基苯基)乙基二氯異丁基矽烷、2-(4-羥基苯基)乙基二氯環己基矽烷等二氯矽烷類;2-(4-羥基苯基)乙基氯二甲基矽烷、2-(4-羥基苯基)乙基氯二乙基矽烷、2-(4-羥基苯基)乙基氯二丙基矽烷、2-(4-羥基苯基)乙基氯二丁基矽烷、2-(4-羥基苯基)乙基氯二異丁基矽烷、2-(4-羥基苯基)乙基氯二環己基矽烷等單氯矽烷類。In the compound 2CS, as R 3 is an exoethyl group, c=0, d=1, and a hydroxyl group is contained in the para position, for example, trichlorobenzene such as 2-(4-hydroxyphenyl)ethyltrichlorodecane may be mentioned. Hydranes; 2-(4-hydroxyphenyl)ethyldichloromethyl decane, 2-(4-hydroxyphenyl)ethyldichloroethyl decane, 2-(4-hydroxyphenyl)ethyldichloride Propyl decane, 2-(4-hydroxyphenyl)ethyldichlorobutyl decane, 2-(4-hydroxyphenyl)ethyldichloroisobutyl decane, 2-(4-hydroxyphenyl)ethyl Dichlorodecane such as dichlorocyclohexyldecane; 2-(4-hydroxyphenyl)ethyl chlorodimethyl decane, 2-(4-hydroxyphenyl)ethyl chlorodiethyl decane, 2-(4- Hydroxyphenyl)ethyl chlorodipropyl decane, 2-(4-hydroxyphenyl)ethyl chlorodibutyl decane, 2-(4-hydroxyphenyl)ethyl chlorodiisobutyl decane, 2-( Monochlorodecanes such as 4-hydroxyphenyl)ethylchlorodicyclohexyldecane.

於該等化合物中,就反應性良好且耐熱性亦變得良好的方面而言,較好的是2-(4-羥基苯基)乙基三氯矽烷、2-(4-羥基苯基)乙基二氯甲基矽烷、2-(4-羥基苯基)乙基二氯乙基矽烷,進而較好的是2-(4-羥基苯基)乙基三氯矽烷、2-(4-羥基苯基)乙基二氯甲基矽烷。化合物2CS可僅使用1種,亦可使用2種以上。Among these compounds, 2-(4-hydroxyphenyl)ethyltrichlorodecane and 2-(4-hydroxyphenyl) are preferred in terms of good reactivity and good heat resistance. Ethyl dichloromethyl decane, 2-(4-hydroxyphenyl)ethyl dichloroethyl decane, more preferably 2-(4-hydroxyphenyl)ethyl trichloro decane, 2-(4- Hydroxyphenyl)ethyldichloromethylnonane. The compound 2CS may be used alone or in combination of two or more.

於化合物2AS或化合物2CS之水解‧縮合反應中,就容易控制反應及除去副產物的方面而言,較好的是使用作為烷氧基矽烷化合物之化合物2AS。化合物2AS或化合物2CS之反應之順序並無特別限定,可使化合物1AS或化合物1CS反應後,再使化合物2AS或化合物2CS反應,亦可為與此相反之順序,又,亦可將化合物1AS或化合物1CS與化合物2AS或化合物2CS加以混合後進行反應。In the hydrolysis/condensation reaction of the compound 2AS or the compound 2CS, in terms of easy control of the reaction and removal of by-products, it is preferred to use the compound 2AS as an alkoxydecane compound. The order of the reaction of the compound 2AS or the compound 2CS is not particularly limited, and the compound 1AS or the compound 1CS may be reacted, and then the compound 2AS or the compound 2CS may be reacted, or the reverse order may be used, or the compound 1AS or the compound 1AS may be used. Compound 1CS is mixed with Compound 2AS or Compound 2CS to carry out a reaction.

化合物2AS或化合物2CS之酚性羥基可視需要如下述通式(2a)The phenolic hydroxyl group of the compound 2AS or the compound 2CS may be as required in the following formula (2a).

[化6][Chemical 6]

(式中,R3 、R4 、c及d與上述通式(2)中之含義相同。)(wherein R 3 , R 4 , c and d have the same meanings as in the above formula (2).)

所示般,經作為保護基之第三丁醚基所保護。經保護基所保護之化合物可與未經保護之化合物同樣地進行矽氫化反應,可藉由與化合物1AS及化合物1CS之情形相同之方法而脫離保護基。As shown, it is protected by a third butyl ether group as a protecting group. The compound protected by the protecting group can be subjected to a hydrazine hydrogenation reaction in the same manner as the unprotected compound, and the protective group can be removed by the same method as in the case of the compound 1AS and the compound 1CS.

繼而,對使化合物DAC及化合物DAH與於1分子中具有至少2個Si-H基之化合物進行矽氫化反應之方法進行說明。Next, a method of subjecting the compound DAC and the compound DAH to a hydrazine hydrogenation reaction with a compound having at least two Si-H groups in one molecule will be described.

作為化合物DAH,例如可列舉:2-乙烯基苯酚、3-乙烯基苯酚、4-乙烯基苯酚、4-(1-苯基乙烯基)苯酚、2-甲基-4-乙烯基苯酚、2-烯丙基苯酚、3-烯丙基苯酚、4-烯丙基苯酚、2-異丙烯基苯酚、3-異丙烯基苯酚、4-異丙烯基苯酚、4-(3-丁烯基)苯酚、4-(4-戊烯基)苯酚、4-(5-己烯基)苯酚、4-(6-庚烯基)苯酚、4-(7-辛烯基)苯酚、4-(8-壬烯基)苯酚、4-(9-癸烯基)苯酚、2-乙烯基-1,4-二羥基苯、5-乙烯基-1,3-二羥基苯等。Examples of the compound DAH include 2-vinylphenol, 3-vinylphenol, 4-vinylphenol, 4-(1-phenylvinyl)phenol, 2-methyl-4-vinylphenol, and 2 -allylphenol, 3-allylphenol, 4-allylphenol, 2-isopropenylphenol, 3-isopropenylphenol, 4-isopropenylphenol, 4-(3-butenyl) Phenol, 4-(4-pentenyl)phenol, 4-(5-hexenyl)phenol, 4-(6-heptenyl)phenol, 4-(7-octenyl)phenol, 4-(8 -nonenyl)phenol, 4-(9-nonenyl)phenol, 2-vinyl-1,4-dihydroxybenzene, 5-vinyl-1,3-dihydroxybenzene, and the like.

於該等化合物中,就工業上容易獲得的方面、本發明之永久抗蝕劑之耐熱性方面而言,較好的是2-乙烯基苯酚、3-乙烯基苯酚、4-乙烯基苯酚、2-烯丙基苯酚、4-烯丙基苯酚、2-異丙烯基苯酚、4-異丙烯基苯酚,進而較好的是2-乙烯基苯酚、4-乙烯基苯酚,最好的是4-乙烯基苯酚。化合物DAH可僅使用1種,亦可使用2種以上。Among these compounds, 2-vinylphenol, 3-vinylphenol, 4-vinylphenol, and 2-vinylphenol, 4-vinylphenol, and 4-vinylphenol are preferred in terms of industrially readily available aspects and heat resistance of the permanent resist of the present invention. 2-allylphenol, 4-allylphenol, 2-isopropenylphenol, 4-isopropenylphenol, more preferably 2-vinylphenol, 4-vinylphenol, most preferably 4 -vinylphenol. The compound DAH may be used alone or in combination of two or more.

又,使化合物DAC及化合物DAH與於1分子中具有至少2個Si-H基之化合物進行矽氫化反應的順序並無特別限定,可以化合物DAC-化合物DAH之順序進行反應,亦可為與此相反之順序,又,亦可將化合物DAC與化合物DAH加以混合後進行反應。再者,化合物DAH之酚性羥基可視需要如上述通式(2a)所示般,經作為保護基之第三丁醚基所保護。經保護基所保護之化合物可與未經保護之化合物同樣地進行矽氫化反應,可藉由與化合物1AS及化合物1CS之情形相同之方法而脫離保護基。Further, the order of the hydrazine hydrogenation reaction of the compound DAC and the compound DAH with a compound having at least two Si-H groups in one molecule is not particularly limited, and the reaction may be carried out in the order of the compound DAC-compound DAH. In the reverse order, the compound DAC and the compound DAH may be mixed and reacted. Further, the phenolic hydroxyl group of the compound DAH may be protected by a third butyl ether group as a protective group as shown in the above formula (2a). The compound protected by the protecting group can be subjected to a hydrazine hydrogenation reaction in the same manner as the unprotected compound, and the protective group can be removed by the same method as in the case of the compound 1AS and the compound 1CS.

以相對於以上述通式(1)所表示之基的莫耳比計,以上述通式(2)所表示之基之含量較好的是0~80,進而較好的是1~70,最好的是2~60。The content of the group represented by the above formula (2) is preferably from 0 to 80, more preferably from 1 to 70, based on the molar ratio of the group represented by the above formula (1). The best is 2~60.

就本發明之正型感光性組合物之熱交聯性提高之方面而言,本發明之(A)成分較好的是進而具有矽醇基。In view of improving the thermal crosslinkability of the positive photosensitive composition of the present invention, the component (A) of the present invention preferably further has a decyl group.

作為導入矽醇基之方法,例如可列舉藉由使三烷氧基矽烷基化合物或三氯矽烷基化合物進行水解‧縮合反應而導入之方法。矽醇基存在容易產生縮合反應,且隨著操作,矽醇基之含量減少之情形,因此於溶劑中進行水解‧縮合反應之情形時,較好的是不對產物進行離析,而將溶劑濃縮或視需要置換成其他溶劑而使用。As a method of introducing a sterol group, for example, a method of introducing a trialkoxy sulfonium alkyl compound or a trichlorodecane alkyl compound by hydrolysis and ‧ condensation reaction can be mentioned. The sterol group is liable to cause a condensation reaction, and as the content of the sterol group decreases with the operation, when the hydrolysis/densation reaction is carried out in a solvent, it is preferred that the product is not isolated, and the solvent is concentrated or Use as needed to replace with other solvents.

以下,根據(A)成分之每種製造方法,對導入矽醇基之方法或提高矽醇基含量之方法進行說明。Hereinafter, a method of introducing a sterol group or a method of increasing the content of a sterol group will be described based on each production method of the component (A).

作為於利用使化合物1AS或化合物1CS進行水解‧縮合反應之方法來製造(A)成分之情形時導入矽醇基之方法,可藉由使用三烷氧基矽烷作為化合物1AS,且使用三氯矽烷化合物作為化合物1CS而導入矽醇基。於三烷氧基矽烷化合物中,2個烷氧基矽烷基進行水解‧縮合反應而形成Si-O-Si之鍵,1個烷氧基矽烷基成為矽醇基。同樣地,於三氯矽烷化合物中,2個氯矽烷基進行水解‧縮合反應而形成Si-O-Si之鍵,1個氯矽烷基成為矽醇基。The method of introducing a sterol group in the case of producing the component (A) by a method of subjecting the compound 1AS or the compound 1CS to a hydrolysis ‧ condensation reaction can be carried out by using a trialkoxy decane as the compound 1AS and using trichloromethane The compound is introduced as a compound 1CS into a sterol group. In the trialkoxy decane compound, two alkoxyalkylene groups undergo hydrolysis and ‧ condensation reaction to form a bond of Si-O-Si, and one alkoxyalkylene group becomes a sterol group. Similarly, in the trichloromethane compound, two chlorodecyl groups undergo hydrolysis and ‧ condensation reaction to form a bond of Si-O-Si, and one chlorodecyl group becomes a sterol group.

矽醇基含量較多之化合物若進行離析,則容易產生矽醇基之脫水反應而形成Si-O-Si之鍵,矽醇基含量降低,因此反應後,不對產物進行離析,而將溶劑濃縮或將溶劑置換成其溶劑,藉此可提高矽醇基含量。即便使用二烷氧基矽烷化合物作為化合物1AS,且使用二氯矽烷化合物作為化合物1CS,亦無法增加矽醇基之數,但可藉由增加(A)成分之分子量而減少揮發成分。又,於使化合物1AS或化合物1CS進行水解‧縮合反應時,併用其他三烷氧基矽烷基化合物可使矽醇基之含量提高,且使(A)成分之分子量增加,揮發成分減少,故較好。於此情形時,二烷氧基矽烷化合物雖然未使矽醇基增加,但由於(A)成分之分子量之增加而使揮發成分減少,故亦可併用。When a compound having a large sterol group content is isolated, a dehydration reaction of a decyl group is likely to occur to form a bond of Si-O-Si, and a sterol group content is lowered. Therefore, after the reaction, the product is not isolated, and the solvent is concentrated. Alternatively, the solvent may be replaced with a solvent thereof, whereby the sterol group content may be increased. Even if a dialkoxy decane compound is used as the compound 1AS and a dichlorosilane compound is used as the compound 1CS, the number of sterol groups cannot be increased, but the volatile component can be reduced by increasing the molecular weight of the component (A). Further, when the compound 1AS or the compound 1CS is subjected to hydrolysis and condensation reaction, the content of the sterol group can be increased by using another trialkoxysulfonyl group compound, and the molecular weight of the component (A) is increased, and the volatile component is decreased. it is good. In this case, although the dialkoxy decane compound does not increase the sterol group, the volatile component is reduced by the increase in the molecular weight of the component (A), so that it can be used in combination.

作為其他三烷氧基矽烷或二烷氧基矽烷,可列舉:烷基烷氧基矽烷化合物、環烷基烷氧基矽烷化合物、芳基烷氧基矽烷化合物、芳基烷基烷氧基矽烷化合物,就本發明之永久抗蝕劑之耐熱性及密著性提高之方面而言,較好的是芳基烷氧基矽烷化合物,進而較好的是以下述通式(4)所表示之芳基烷氧基矽烷化合物:Examples of the other trialkoxy decane or dialkoxy decane include an alkyl alkoxy decane compound, a cycloalkyl alkoxy decane compound, an aryl alkoxy decane compound, and an arylalkyl alkoxy decane. The compound is preferably an aryl alkoxydecane compound, and further preferably represented by the following formula (4), in terms of improvement of heat resistance and adhesion of the permanent resist of the present invention. Aryl alkoxy decane compounds:

[化7][Chemistry 7]

(式中,R11 表示可相同亦可不同之碳數1~6之烷基或環烷基,R12 表示碳數1~3之烷基,R13 表示可相同亦可不同之碳數1~4之烷基,f表示2~3之數,g表示0或1~5之數)。(wherein R 11 represents an alkyl group or a cycloalkyl group having 1 to 6 carbon atoms which may be the same or different, R 12 represents an alkyl group having 1 to 3 carbon atoms, and R 13 represents a carbon number which may be the same or different. ~4 alkyl, f represents the number of 2~3, g represents 0 or 1~5).

作為烷基烷氧基矽烷化合物,可列舉:甲基三甲氧基矽烷、甲基三乙氧基矽烷、乙基三甲氧基矽烷、乙基三乙氧基矽烷、丙基三甲氧基矽烷、丙基三乙氧基矽烷、異丙基三甲氧基矽烷、異丙基三乙氧基矽烷、丁基三甲氧基矽烷、丁基三乙氧基矽烷、異丁基三甲氧基矽烷、異丁基三乙氧基矽烷、第三丁基三甲氧基矽烷、第三丁基三乙氧基矽烷等烷基三烷氧基矽烷化合物,二甲基二甲氧基矽烷、二甲基二乙氧基矽烷、二乙基二甲氧基矽烷、二乙基二乙氧基矽烷、二丙基二甲氧基矽烷、二丙基二乙氧基矽烷、二異丙基二甲氧基矽烷、二異丙基二乙氧基矽烷、二丁基二甲氧基矽烷、二丁基二乙氧基矽烷、二異丁基二甲氧基矽烷、二異丁基二乙氧基矽烷、二(第三丁基)二甲氧基矽烷、二(第三丁基)二乙氧基矽烷等二烷基二烷氧基矽烷化合物;作為環烷基烷氧基矽烷化合物,可列舉:環己基三甲氧基矽烷、環己基三乙氧基矽烷等環烷基三烷氧基矽烷化合物,二環己基二甲氧基矽烷、二環己基二乙氧基矽烷、環己基(甲基)二乙氧基矽烷等環烷基二烷氧基矽烷化合物;作為芳基烷基烷氧基矽烷化合物,可列舉:苄基三甲氧基矽烷、苄基三乙氧基矽烷等芳基烷基三烷氧基矽烷化合物,二苄基二甲氧基矽烷、二苄基二乙氧基矽烷、苄基(甲基)二甲氧基矽烷等芳基烷基二烷氧基矽烷化合物。Examples of the alkyl alkoxydecane compound include methyltrimethoxydecane, methyltriethoxydecane, ethyltrimethoxydecane, ethyltriethoxydecane, propyltrimethoxydecane, and C. Triethoxy decane, isopropyl trimethoxy decane, isopropyl triethoxy decane, butyl trimethoxy decane, butyl triethoxy decane, isobutyl trimethoxy decane, isobutyl An alkyltrialkoxydecane compound such as triethoxydecane, tert-butyltrimethoxydecane or tert-butyltriethoxydecane, dimethyldimethoxydecane, dimethyldiethoxy Decane, diethyldimethoxydecane, diethyldiethoxydecane, dipropyldimethoxydecane, dipropyldiethoxydecane, diisopropyldimethoxydecane, diiso Propyl diethoxy decane, dibutyl dimethoxy decane, dibutyl diethoxy decane, diisobutyl dimethoxy decane, diisobutyl diethoxy decane, two (third a dialkyldialkoxydecane compound such as butyl)dimethoxydecane or di(t-butyl)diethoxydecane; as a cycloalkylalkoxy group; Examples of the decane compound include a cycloalkyltrialkoxydecane compound such as cyclohexyltrimethoxydecane or cyclohexyltriethoxydecane, dicyclohexyldimethoxydecane, dicyclohexyldiethoxydecane, and a ring. a cycloalkyl dialkoxy decane compound such as hexyl (methyl) diethoxy decane; and examples of the arylalkyl alkoxy decane compound include benzyltrimethoxydecane, benzyltriethoxydecane, and the like. Arylalkyltrialkoxydecane compounds, arylalkyldialkoxydecanes such as dibenzyldimethoxydecane, dibenzyldiethoxydecane, benzyl(methyl)dimethoxydecane Compound.

作為以上述通式(4)所表示之芳基烷氧基矽烷化合物,例如可列舉:苯基三甲氧基矽烷、苯基三乙氧基矽烷、甲苯甲醯基三甲氧基矽烷、二甲苯基三甲氧基矽烷、異丙苯基三甲氧基矽烷、第三丁基苯基三乙氧基矽烷、苯基甲基二甲氧基矽烷、苯基甲基二乙氧基矽烷、甲苯甲醯基甲基二甲氧基矽烷、二甲苯基甲基二甲氧基矽烷、異丙苯基甲基二甲氧基矽烷、苯基乙基二甲氧基矽烷、苯基丙基二甲氧基矽烷、苯基丁基二甲氧基矽烷、苯基己基二甲氧基矽烷、苯基環己基二甲氧基矽烷、苯基二甲基甲氧基矽烷等。Examples of the aryl alkoxydecane compound represented by the above formula (4) include phenyltrimethoxydecane, phenyltriethoxysilane, tolylmethyltrimethoxydecane, and xylyl group. Trimethoxydecane, cumyltrimethoxydecane, tert-butylphenyltriethoxydecane, phenylmethyldimethoxydecane, phenylmethyldiethoxydecane, tolylmethyl Methyldimethoxydecane, xylylmethyldimethoxydecane, cumylmethyldimethoxydecane, phenylethyldimethoxydecane, phenylpropyldimethoxydecane , phenylbutyl dimethoxy decane, phenylhexyl dimethoxy decane, phenylcyclohexyl dimethoxy decane, phenyl dimethyl methoxy decane, and the like.

於該等化合物中,就耐熱性與密著性提高之方面而言,較好的是苯基三甲氧基矽烷、苯基三乙氧基矽烷、苯基甲基二甲氧基矽烷及苯基甲基二乙氧基矽烷,進而較好的是苯基三甲氧基矽烷及苯基三乙氧基矽烷,最好的是苯基三甲氧基矽烷。Among these compounds, phenyltrimethoxydecane, phenyltriethoxydecane, phenylmethyldimethoxydecane, and phenyl are preferred in terms of heat resistance and adhesion. Methyldiethoxydecane is further preferably phenyltrimethoxydecane and phenyltriethoxydecane, and most preferably phenyltrimethoxydecane.

又,作為於利用使化合物DAC與於1分子中具有至少2個Si-H基之化合物進行矽氫化反應之方法來製造(A)成分之情形時導入矽醇基之方法,係將化合物DAC之一部分置換為含有具有與Si-H基之反應性之碳-碳雙鍵的其他烷氧基矽烷化合物(以下稱作化合物DS)而進行矽氫化反應,並使所得之產物與上述其他三烷氧基矽烷或二烷氧基矽烷(較好的是以上述通式(4)所表示之芳基烷氧基矽烷化合物)進行水解.縮合反應,藉此獲得具有矽醇基之(A)成分。為了提高矽醇基之含量,於水解.縮合反應後,不對產物進行離析,而將溶劑濃縮或將溶劑置換成其他溶劑即可。Further, as a method of producing a component (A) by a method in which a compound DAC is subjected to a hydrogenation reaction with a compound having at least two Si-H groups in one molecule, a method of introducing a sterol group is a method of introducing a compound DAC. Part of the substitution is carried out by a hydrazine hydrogenation reaction with another alkoxydecane compound having a carbon-carbon double bond having reactivity with a Si-H group (hereinafter referred to as a compound DS), and the obtained product and the above other trialkoxy The decyl or dialkoxy decane (preferably, the aryl alkoxy decane compound represented by the above formula (4)) is subjected to hydrolysis and condensation reaction, whereby a component (A) having a decyl group is obtained. In order to increase the content of the sterol group, after the hydrolysis and condensation reaction, the product is not isolated, and the solvent is concentrated or the solvent is replaced with another solvent.

作為化合物DS,可列舉:三甲氧基乙烯基矽烷、三甲氧基烯丙基矽烷、三甲氧基異丙烯基矽烷、三甲氧基-3-丁烯基矽烷、三甲氧基-4-戊烯基矽烷、三甲氧基-5-己烯基矽烷、三甲氧基-6-庚烯基矽烷、三甲氧基-7-辛烯基矽烷、三甲氧基-8-壬烯基矽烷、三甲氧基-9-癸烯基矽烷、三乙氧基乙烯基矽烷、三乙氧基烯丙基矽烷、三乙氧基異丙烯基矽烷、三乙氧基-3-丁烯基矽烷、三乙氧基-4-戊烯基矽烷、三乙氧基-5-己烯基矽烷、三乙氧基-6-庚烯基矽烷、三乙氧基-7-辛烯基矽烷、三乙氧基-8-壬烯基矽烷、三乙氧基-9-癸烯基矽烷、二甲氧基甲基乙烯基矽烷、二甲氧基乙基乙烯基矽烷、二甲氧基丙基乙烯基矽烷、二甲氧基異丙基乙烯基矽烷、甲氧基二甲基乙烯基矽烷、甲氧基二乙基乙烯基矽烷等。As the compound DS, trimethoxyvinyl decane, trimethoxy allyl decane, trimethoxy isopropenyl decane, trimethoxy-3-butenyl decane, trimethoxy-4-pentenyl may, for example, be mentioned. Decane, trimethoxy-5-hexenyl decane, trimethoxy-6-heptenyl decane, trimethoxy-7-octenyl decane, trimethoxy-8-nonenyl decane, trimethoxy- 9-nonenyl decane, triethoxyvinyl decane, triethoxy allyl decane, triethoxy isopropenyl decane, triethoxy-3-butenyl decane, triethoxy- 4-pentenyl decane, triethoxy-5-hexenyl decane, triethoxy-6-heptenyl decane, triethoxy-7-octenyl decane, triethoxy-8- Decenyl decane, triethoxy-9-nonenyl decane, dimethoxymethylvinyl decane, dimethoxyethyl vinyl decane, dimethoxypropyl vinyl decane, dimethoxy Isopropyl vinyl decane, methoxydimethyl vinyl decane, methoxy diethyl vinyl decane, and the like.

於該等化合物中,就耐熱性與密著性提高之方面而言,較好的是三甲氧基乙烯基矽烷、三乙氧基乙烯基矽烷、三甲氧基烯丙基矽烷及二甲氧基甲基乙烯基矽烷,進而較好的是三甲氧基乙烯基矽烷及三乙氧基乙烯基矽烷,最好的是三甲氧基乙烯基矽烷。化合物DS可僅使用1種,亦可使用2種以上。Among these compounds, preferred are trimethoxyvinyl decane, triethoxyvinyl decane, trimethoxyallyl decane, and dimethoxy group in terms of improvement in heat resistance and adhesion. Methyl vinyl decane is further preferably trimethoxyvinyl decane and triethoxy vinyl decane, and most preferably trimethoxy vinyl decane. The compound DS may be used alone or in combination of two or more.

(A)成分中之矽醇基之含量以OH之含量計,較好的是1~30質量%,進而較好的是3~25質量%,最好的是5~20質量%。The content of the sterol group in the component (A) is preferably from 1 to 30% by mass, more preferably from 3 to 25% by mass, most preferably from 5 to 20% by mass, based on the OH content.

作為本發明之(A)成分之矽醇基之定量方法,可列舉:利用三甲基氯矽烷等使矽醇基進行三甲基矽烷化,藉由反應前後之重量增加量來定量之方法(TMS(trimethylsilyl,三甲基矽烷基)化法);藉由使用近紅外線分光光度計(參照日本專利特開2001-208683號公報、日本專利特開2003-35667號公報等)或29 Si-NMR(參照日本專利特開2007-217249號公報等)之機器分析來定量之方法。The method for quantifying the sterol group of the component (A) of the present invention includes a method in which a sterol group is trimethylsulfonated by trimethylchloromethane or the like and quantified by weight increase before and after the reaction ( TMS (trimethylsilyl, trimethylsilyl); by using a near-infrared spectrophotometer (refer to Japanese Patent Laid-Open No. 2001-208683, Japanese Patent Laid-Open No. 2003-35667, etc.) or 29 Si-NMR (Method of quantitative analysis by machine analysis of Japanese Patent Laid-Open Publication No. 2007-217249, etc.).

作為本發明之(A)成分,最好的是使以下述通式(3)As the component (A) of the present invention, it is preferred to use the following formula (3)

[化8][化8]

(式中,R1 、R3 及R8 可相同亦可不同,表示可具有取代烴基之碳數1~10之伸烷基,R2 及R4 表示可相同亦可不同之碳數1~4之烷基,R5 、R6 及R7 表示可相同亦可不同之碳數1~10之烷基或苯基。a表示0或1~4之數,b表示1~3之數,但a+b不超過5。c表示0或1~4之數,d表示1~3之數,但c+d不超過5。R9 表示可相同亦可不同之碳數1~6之烷基或環烷基,R10 表示碳數1~3之烷基,e表示1~3之數。m、n及p表示m:n:p=1:0~2:0.5~3且m+n+p=3~6之數。)(wherein R 1 , R 3 and R 8 may be the same or different and each represents an alkylene group having 1 to 10 carbon atoms which may have a substituted hydrocarbon group, and R 2 and R 4 represent a carbon number which may be the same or different. An alkyl group of 4, R 5 , R 6 and R 7 represent an alkyl group or a phenyl group having 1 to 10 carbon atoms which may be the same or different. a represents a number of 0 or 1 to 4, and b represents a number of 1 to 3, However, a+b does not exceed 5. c represents 0 or 1~4, d represents the number of 1~3, but c+d does not exceed 5. R 9 represents the same or different carbon number 1~6. Or a cycloalkyl group, R 10 represents an alkyl group having 1 to 3 carbon atoms, and e represents a number of 1 to 3. m, n and p represent m: n: p = 1: 0 to 2: 0.5 to 3 and m + n+p=3~6.)

所表示之環狀矽氧烷化合物與以上述通式(4)所表示之芳基烷氧基矽烷化合物反應所得之矽氧樹脂。An anthracene resin obtained by reacting a cyclic siloxane compound represented by the above-mentioned aryl alkoxy decane compound represented by the above formula (4).

於上述通式(3)中,關於以上述通式(1)及通式(2)為來源之部分,即R1 、R2 、R3 及R4 以及a、b、c及d,通式(1)及通式(2)之說明適宜應用。R8 可相同亦可不同,表示可具有取代烴基之碳數1~10之伸烷基,R5 、R6 及R7 表示可相同亦可不同之碳數1~10之烷基或苯基。R9 表示可相同亦可不同之碳數1~6之烷基或環烷基,R10 表示碳數1~3之烷基。In the above formula (3), the parts derived from the above formula (1) and formula (2), that is, R 1 , R 2 , R 3 and R 4 and a, b, c and d, are passed. The description of the formula (1) and the formula (2) is suitably applied. R 8 may be the same or different and represents an alkylene group having 1 to 10 carbon atoms which may have a substituted hydrocarbon group, and R 5 , R 6 and R 7 represent an alkyl group or a phenyl group having 1 to 10 carbon atoms which may be the same or different. . R 9 represents an alkyl group or a cycloalkyl group having 1 to 6 carbon atoms which may be the same or different, and R 10 represents an alkyl group having 1 to 3 carbon atoms.

作為碳數1~10之伸烷基,可列舉以R1 所例示之伸烷基,作為R8 中可具有之取代烴基,可列舉以R1 所例示之烴基等,作為碳數1~10之烷基,可列舉:甲基、乙基、丙基、異丙基、丁基、異丁基、第二丁基、第三丁基、戊基、第二戊基、第三戊基、己基、庚基、辛基、異辛基、2-乙基己基、第三辛基、壬基、異壬基、癸基,作為碳數1~6之烷基,可列舉以R15 、R16 及R17 所例示之烷基,作為環烷基,可列舉:環戊基、環己基、甲基環戊基、環戊基甲基,作為碳數1~3之烷基,可列舉:甲基、乙基、丙基、異丙基。Examples of the alkylene group having 1 to 10 carbon atoms include an alkylene group exemplified as R 1 and a substituted hydrocarbon group which may be represented by R 8 . The hydrocarbon group exemplified as R 1 may be mentioned as the carbon number 1 to 10 The alkyl group may, for example, be a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a second butyl group, a third butyl group, a pentyl group, a second pentyl group or a third pentyl group. Hexyl, heptyl, octyl, isooctyl, 2-ethylhexyl, trioctyl, decyl, isodecyl, fluorenyl, as alkyl having 1 to 6 carbon atoms, may be exemplified by R 15 , R R 17 and 16 of the embodiment shown an alkyl group, cycloalkyl group, include: cyclopentyl, cyclohexyl, methylcyclopentyl, cyclopentylmethyl, 1 to 3 carbon atoms as the alkyl group include: Methyl, ethyl, propyl, isopropyl.

就工業上獲得之容易程度而言,R1 、R3 及R8 較好的是伸乙基、伸丙基及伸丁基,進而較好的是伸乙基及伸丁基,最好的是伸乙基。就工業上獲得之容易程度而言,R5 、R6 及R7 較好的是甲基、乙基、丙基、異丙基、丁基、異丁基、第三丁基及苯基,就耐熱性提高之方面而言,R5 、R6 及R7 進而較好的是甲基、乙基及苯基,最好的是甲基。就耐熱性提高之方面而言,R9 較好的是甲基或乙基,進而較好的是甲基。就耐熱性提高之方面而言,R10 較好的是甲基。In terms of ease of industrial availability, R 1 , R 3 and R 8 are preferably an ethyl group, a propyl group and a butyl group, and more preferably an ethyl group and a butyl group. It is an ethyl group. R 5 , R 6 and R 7 are preferably methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tert-butyl and phenyl, in terms of ease of industrial availability. In terms of improvement in heat resistance, R 5 , R 6 and R 7 are more preferably a methyl group, an ethyl group and a phenyl group, and most preferably a methyl group. In terms of improvement in heat resistance, R 9 is preferably a methyl group or an ethyl group, and more preferably a methyl group. In terms of improvement in heat resistance, R 10 is preferably a methyl group.

e表示1~3之數,m、n及p表示m:n:p=1:0~2:0.5~3且m+n+p=3~6之數。以通式(3)所表示之環狀矽氧烷化合物可僅使用一種,亦可組合使用2種以上。於組合使用2種以上之情形時,m、n及p之數為平均之數。例如m=1、n=0、p=3之化合物與m=1、n=1、p=2之化合物的等莫耳混合物可表示為m:n:p=1:0.5:2.5。就高溫熱歷程後之耐化學藥品性提高之方面而言,n相對於m之比較好的是0~1,進而較好的是0.01~0.7,最好的是0.02~0.5。又,就本發明之正型感光性組合物之熱交聯性提高之方面而言,p較好的是至少為2之數。e represents the number of 1~3, m, n and p represent the number of m:n:p=1:0~2:0.5~3 and m+n+p=3~6. The cyclic siloxane compound represented by the formula (3) may be used alone or in combination of two or more. When two or more types are used in combination, the number of m, n, and p is an average number. For example, an equimolar mixture of a compound of m=1, n=0, p=3 and a compound of m=1, n=1, p=2 can be expressed as m:n:p=1:0.5:2.5. In terms of improvement in chemical resistance after a high temperature heat history, n is preferably 0 to 1 with respect to m, more preferably 0.01 to 0.7, and most preferably 0.02 to 0.5. Further, in terms of improvement in thermal crosslinkability of the positive photosensitive composition of the present invention, p is preferably at least 2 in number.

以上述通式(3)所表示之環狀矽氧烷化合物如上所述般,可使以上述通式(6)所表示之環狀矽氧烷化合物、與化合物DS、化合物DAC、化合物DS及化合物DAH進行矽氫化而製造。以通式(3)所表示之環狀矽氧烷化合物可為相同者,亦可為若干種之混合物。於此情形時,於矽氧樹脂之分子中存在複數個源自以通式(3)所表示之環狀矽氧烷化合物之基,故通式(3)之m、n及p之值成為分子中之平均值。The cyclic siloxane compound represented by the above formula (3) can be a cyclic oxirane compound represented by the above formula (6), a compound DS, a compound DAC, a compound DS, and the like. The compound DAH was produced by hydrogenation of hydrazine. The cyclic siloxane compound represented by the formula (3) may be the same or a mixture of several kinds. In this case, a plurality of groups derived from the cyclic siloxane compound represented by the general formula (3) are present in the molecule of the oxirane resin, so that the values of m, n and p of the general formula (3) become The average value in the molecule.

可使用羧基或酚性羥基經第三丁基等所保護之化合物,例如以下述通式(3a)A compound in which a carboxyl group or a phenolic hydroxyl group is protected by a third butyl group or the like can be used, for example, the following formula (3a)

[化9][Chemistry 9]

(式中,R1 ~R10 、a、b、c、d、e、m、n及p與上述通式(3)中之含義相同。)(wherein R 1 to R 10 , a, b, c, d, e, m, n and p have the same meanings as in the above formula (3).)

所表示之環狀矽氧烷化合物,來替代以上述通式(3)所表示之環狀矽氧烷化合物(3),藉由使以上述通式(3a)所表示之環狀矽氧烷化合物與以上述通式(4)所表示之芳基烷氧基矽烷化合物反應後,脫離第三丁基,可製成作為本發明之(A)成分之矽氧樹脂。The cyclic oxoxane compound represented by the above formula (3) is substituted for the cyclic oxirane compound represented by the above formula (3), and the cyclic oxirane represented by the above formula (3a) is used. After reacting the compound with the arylalkoxydecane compound represented by the above formula (4), the tributyl group is removed, and the oxime resin which is the component (A) of the present invention can be obtained.

繼而,對作為本發明之(B)成分的具有縮水甘油基之矽氧烷化合物進行說明。Next, a heptane group having a glycidyl group as a component (B) of the present invention will be described.

作為本發明之(B)成分的具有縮水甘油基之矽氧烷化合物於1分子中具有至少1個縮水甘油基與至少1個矽氧烷基(以Si-O-Si所表示之基)。縮水甘油基之數較好的是於1分子中為至少2個,作為上述含有縮水甘油基之矽氧烷化合物,例如可列舉:以下述通式(7)The glycidyl group-containing oxirane compound as the component (B) of the present invention has at least one glycidyl group and at least one fluorenylalkyl group (a group represented by Si-O-Si) in one molecule. The number of the glycidyl groups is preferably at least two in one molecule, and examples of the glycidyl group-containing oxirane compound include the following formula (7).

[化10][化10]

(式中,Y表示具有縮水甘油基之基或甲基,G表示具有縮水甘油基之基,R21 表示可相同亦可不同之甲基或苯基,R22 、R23 及R24 表示可相同亦可不同之碳數1~6之烷基、碳數5~6之環烷基或苯基,u表示0~1000之數,w表示0~1000之數。其中,於u為0或1之情形時,Y表示氫原子。)(wherein, Y represents a group having a glycidyl group or a methyl group, G represents a group having a glycidyl group, R 21 represents a methyl group or a phenyl group which may be the same or different, and R 22 , R 23 and R 24 represent The same or different carbon number of 1~6 alkyl, carbon number 5~6 cycloalkyl or phenyl, u represents the number of 0~1000, w represents the number of 0~1000. Among them, u is 0 or In the case of 1, Y represents a hydrogen atom.)

所表示之線狀矽氧烷化合物、以下述通式(8)The linear siloxane compound represented by the following formula (8)

[化11][11]

(式中,R25 、R26 及R27 表示可相同亦可不同之碳數1~6之烷基、碳數5~6之環烷基或苯基,G表示具有縮水甘油基之基,x表示2~6之數,y表示x+y成為3~6的0~4之數。)(wherein R 25 , R 26 and R 27 represent an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 5 to 6 carbon atoms or a phenyl group which may be the same or different, and G represents a group having a glycidyl group, x represents the number of 2~6, and y represents the number of 0~4 where x+y becomes 3~6.)

所表示之環狀矽氧烷化合物、及具有縮水甘油基之烷氧基矽烷之水解縮合反應物等。A cyclic oxirane compound and a hydrolysis condensation reaction product of a glycidyl group-containing alkoxysilane.

首先,對以上述通式(7)所表示之線狀矽氧烷化合物進行說明。First, the linear siloxane compound represented by the above formula (7) will be described.

於上述通式(7)中,Y表示具有縮水甘油基之基或甲基,G表示具有縮水甘油基之基,R21 表示可相同亦可不同之甲基或苯基,R22 、R23 及R24 表示可相同亦可不同之碳數1~6之烷基、碳數5~6之環烷基或苯基。In the above formula (7), Y represents a group having a glycidyl group or a methyl group, G represents a group having a glycidyl group, and R 21 represents a methyl group or a phenyl group which may be the same or different, R 22 and R 23 And R 24 represents an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 5 to 6 carbon atoms or a phenyl group which may be the same or different.

就容易製造之方面而言,R21 較好的是甲基。作為碳數1~6之烷基、碳數5~6之環烷基,可列舉以R15 、R16 及R17 所例示之基。就容易製造之方面而言,R22 較好的是甲基及乙基,進而較好的是甲基。就本發明之永久抗蝕劑之耐熱性方面而言,R23 及R24 較好的是甲基、乙基及苯基,進而較好的是甲基及苯基,最好的是甲基。In terms of ease of manufacture, R 21 is preferably a methyl group. Examples of the alkyl group having 1 to 6 carbon atoms and the cycloalkyl group having 5 to 6 carbon atoms include those exemplified as R 15 , R 16 and R 17 . In terms of ease of manufacture, R 22 is preferably a methyl group and an ethyl group, and more preferably a methyl group. In terms of heat resistance of the permanent resist of the present invention, R 23 and R 24 are preferably a methyl group, an ethyl group and a phenyl group, more preferably a methyl group and a phenyl group, and most preferably a methyl group. .

X表示氫原子或甲基,u表示0~1000之數,w表示0~1000之數,於u為0或1之情形時,X表示氫原子。X represents a hydrogen atom or a methyl group, u represents a number from 0 to 1000, w represents a number from 0 to 1000, and when u is 0 or 1, X represents a hydrogen atom.

以上述通式(7)所表示之線狀矽氧烷化合物可藉由使含有具有與Si-H基之反應性之碳-碳雙鍵及縮水甘油基的化合物與以上述通式(5)所表示之線狀化合物進行矽氫化反應而製造。The linear siloxane compound represented by the above formula (7) can be obtained by the above formula (5) by using a compound having a carbon-carbon double bond and a glycidyl group having reactivity with a Si-H group. The linear compound shown is produced by a hydrazine hydrogenation reaction.

作為含有具有與Si-H基之反應性之碳-碳雙鍵及縮水甘油基之化合物,例如可列舉:乙烯基縮水甘油醚、烯丙基縮水甘油醚、5-縮水甘油氧基丙基-2-降艸伯烯等,就工業上獲得之容易程度與矽氫化之反應性而言,較好的是烯丙基縮水甘油醚。Examples of the compound containing a carbon-carbon double bond and a glycidyl group having reactivity with a Si-H group include vinyl glycidyl ether, allyl glycidyl ether, and 5-glycidoxypropyl group. 2-norbornurethane or the like is preferably an allyl glycidyl ether in terms of ease of industrial availability and reactivity with hydrazine hydrogenation.

以上述通式(7)所表示之線狀矽氧烷化合物之分子中之環氧基之比例過少時,交聯效果變少,本發明之永久抗蝕劑之物性降低,故以通式(7)所表示之線狀矽氧烷化合物之環氧當量較好的是1000以下,進而較好的是700以下,最好的是350以下。再者,所謂環氧當量,係指分子量除以環氧基之數所得之值,即與1個環氧基對應之分子量。When the ratio of the epoxy group in the molecule of the linear siloxane compound represented by the above formula (7) is too small, the crosslinking effect is small, and the physical properties of the permanent resist of the present invention are lowered, so 7) The epoxy equivalent of the linear azide compound represented by the catalyst is preferably 1,000 or less, more preferably 700 or less, and most preferably 350 or less. Further, the epoxy equivalent means a value obtained by dividing the molecular weight by the number of epoxy groups, that is, a molecular weight corresponding to one epoxy group.

以上述通式(7)所表示之線狀矽氧烷化合物之分子量並無特別限定,但於過大之情形時,存在對鹼性顯影液之溶解性或分散性降低而於鹼性顯影後之基板表面殘留抗蝕劑殘渣之情形,故質量平均分子量較好的是20000以下,進而較好的是15000以下,最好的是10000以下。The molecular weight of the linear siloxane compound represented by the above formula (7) is not particularly limited. However, when it is too large, the solubility or dispersibility of the alkaline developer is lowered, and after alkaline development. When the resist residue remains on the surface of the substrate, the mass average molecular weight is preferably 20,000 or less, more preferably 15,000 or less, and most preferably 10,000 or less.

繼而,對以上述通式(8)所表示之環狀矽氧烷化合物進行說明。Next, the cyclic siloxane compound represented by the above formula (8) will be described.

於上述通式(8)中,R25 、R26 及R27 表示可相同亦可不同之碳數1~6之烷基、碳數5~6之環烷基或苯基,G表示具有縮水甘油基之基。作為碳數1~6之烷基及碳數5~6之環烷基,可列舉以R15 、R16 及R17 所列舉之烷基及環烷基。In the above formula (8), R 25 , R 26 and R 27 represent an alkyl group having 1 to 6 carbon atoms or a cycloalkyl group having 5 to 6 carbon atoms which may be the same or different, and G represents a shrinkage. Glyceryl group. Examples of the alkyl group having 1 to 6 carbon atoms and the cycloalkyl group having 5 to 6 carbon atoms include an alkyl group and a cycloalkyl group exemplified as R 15 , R 16 and R 17 .

就容易製造之方面而言,R25 較好的是碳數1~6之烷基,進而較好的是甲基及乙基,最好的是甲基。又,就本發明之永久抗蝕劑之耐熱性方面而言,R26 及R27 較好的是甲基、乙基及苯基,進而較好的是甲基及苯基,最好的是甲基。In terms of ease of manufacture, R 25 is preferably an alkyl group having 1 to 6 carbon atoms, more preferably a methyl group and an ethyl group, and most preferably a methyl group. Further, in terms of heat resistance of the permanent resist of the present invention, R 26 and R 27 are preferably a methyl group, an ethyl group and a phenyl group, more preferably a methyl group and a phenyl group, and most preferably methyl.

x表示2~6之數,y表示x+y成為3~6的0~4之數。就工業上容易獲得之方面而言,x+y較好的是4~6,進而較好的是4~5,最好的是4。又,y較好的是0。x represents the number of 2~6, and y represents the number of 0~4 where x+y becomes 3~6. In terms of industrial availability, x+y is preferably 4-6, and more preferably 4-5, and most preferably 4. Also, y is preferably 0.

以上述通式(8)所表示之環狀矽氧烷化合物可藉由使含有具有與Si-H基之反應性之碳-碳雙鍵及縮水甘油基的化合物與以上述通式(6)所表示之環狀化合物進行矽氫化反應而製造。The cyclic oxirane compound represented by the above formula (8) can be obtained by reacting a compound having a carbon-carbon double bond and a glycidyl group having reactivity with a Si-H group with the above formula (6) The cyclic compound shown is produced by a hydrazine hydrogenation reaction.

繼而,對具有縮水甘油基之烷氧基矽烷之水解‧縮合反應物進行說明。Next, the hydrolysis/condensation reaction of the alkoxysilane having a glycidyl group will be described.

具有縮水甘油基之烷氧基矽烷之水解‧縮合反應物係利用公知方法,例如化合物1AS或化合物1CS之水解‧縮合反應中所說明之方法等,使具有縮水甘油基之烷氧基矽烷進行水解‧縮合反應所得之化合物。Hydrolysis/condensation reaction of a glycidyl group-containing alkoxy decane The hydrolysis of a glycidyl group-containing alkoxy decane is carried out by a known method, for example, the method described in the hydrolysis of the compound 1AS or the compound 1CS, the condensation reaction, and the like. ‧ compounds obtained by condensation reaction.

作為具有縮水甘油基之烷氧基矽烷,例如可列舉:縮水甘油基三甲氧基矽烷、縮水甘油基三乙氧基矽烷等縮水甘油基烷氧基矽烷化合物;2-縮水甘油氧基乙基三甲氧基矽烷、2-縮水甘油氧基乙基甲基二甲氧基矽烷等縮水甘油氧基乙基烷氧基矽烷化合物;3-縮水甘油氧基丙基三甲氧基矽烷、3-縮水甘油氧基丙基甲基二甲氧基矽烷、3-縮水甘油氧基丙基乙基二甲氧基矽烷、3-縮水甘油氧基丙基苯基二甲氧基矽烷、雙(3-縮水甘油氧基丙基)二甲氧基矽烷、3-縮水甘油氧基丙基三乙氧基矽烷、3-縮水甘油氧基丙基甲基二乙氧基矽烷、3-縮水甘油氧基丙基乙基二乙氧基矽烷、3-縮水甘油氧基丙基苯基二乙氧基矽烷、雙(3-縮水甘油氧基丙基)二乙氧基矽烷等3-縮水甘油氧基丙基烷氧基矽烷化合物;2-(4-縮水甘油氧基苯基)乙基三甲氧基矽烷、2-(4-縮水甘油氧基苯基)乙基三乙氧基矽烷等2-(4-縮水甘油氧基苯基)乙基烷氧基矽烷化合物;5-(縮水甘油氧基甲基)降艸伯基三甲氧基矽烷、6-(縮水甘油氧基甲基)降艸伯基三甲氧基矽烷等縮水甘油氧基甲基降艸伯基烷氧基矽烷化合物等。Examples of the alkoxydecane having a glycidyl group include a glycidyl alkoxydecane compound such as glycidyl trimethoxydecane or glycidyl triethoxysilane; 2-glycidoxyethyltrimethyl a glycidoxyethylalkoxydecane compound such as oxydecane or 2-glycidoxyethylmethyldimethoxydecane; 3-glycidoxypropyltrimethoxydecane, 3-glycidyloxy Propylmethyldimethoxydecane, 3-glycidoxypropylethyldimethoxydecane, 3-glycidoxypropylphenyldimethoxydecane, bis(3-glycidoxy) Propyl)dimethoxydecane, 3-glycidoxypropyltriethoxydecane, 3-glycidoxypropylmethyldiethoxydecane, 3-glycidoxypropylethyl 3-glycidoxypropyl alkoxy groups such as diethoxydecane, 3-glycidoxypropyl phenyl diethoxy decane, bis(3-glycidoxypropyl) diethoxy decane Decane compound; 2-(4-glycidoxyphenyl)ethyltrimethoxydecane, 2-(4-glycidoxyphenyl)ethyltriethyl 2-(4-glycidoxyphenyl)ethylalkoxydecane compound such as decane or the like; 5-(glycidoxymethyl)norbornyltrimethoxydecane, 6-(glycidyloxymethyl) A glycidyloxymethylnorbornyloxy alkane compound such as a thiol trimethoxydecane.

於該等化合物中,就水解‧縮合反應之反應性及工業上獲得之容易程度而言,較好的是3-縮水甘油氧基丙基烷氧基矽烷化合物。於3-縮水甘油氧基丙基烷氧基矽烷化合物中,進而較好的是3-縮水甘油氧基丙基三甲氧基矽烷、3-縮水甘油氧基丙基甲基二甲氧基矽烷、雙(3-縮水甘油氧基丙基)二甲氧基矽烷、3-縮水甘油氧基丙基三乙氧基矽烷,進而較好的是3-縮水甘油氧基丙基三甲氧基矽烷、3-縮水甘油氧基丙基三乙氧基矽烷,最好的是3-縮水甘油氧基丙基三甲氧基矽烷。Among these compounds, a 3-glycidoxypropyl alkoxydecane compound is preferred in terms of reactivity of the hydrolysis/condensation reaction and ease of industrial availability. Among the 3-glycidoxypropyl alkoxydecane compounds, more preferred are 3-glycidoxypropyltrimethoxydecane and 3-glycidoxypropylmethyldimethoxydecane. Bis(3-glycidoxypropyl)dimethoxydecane, 3-glycidoxypropyltriethoxydecane, more preferably 3-glycidoxypropyltrimethoxydecane, 3 - Glycidoxypropyltriethoxydecane, most preferably 3-glycidoxypropyltrimethoxydecane.

於製造具有縮水甘油基之烷氧基矽烷之水解‧縮合反應物之情形時,除了具有縮水甘油基之烷氧基矽烷以外,亦可併用不具有縮水甘油基之其他烷氧基矽烷化合物。作為上述其他烷氧基矽烷化合物,可列舉於上述導入矽醇基之方法或提高矽醇基含量之方法中,作為其他三烷氧基矽烷或二烷氧基矽烷所例示之化合物。In the case of producing a hydrolysis/condensation reactant of a glycidyl group-containing alkoxydecane, in addition to the glycidyl group-containing alkoxydecane, other alkoxydecane compounds having no glycidyl group may be used in combination. The other alkoxydecane compound may be exemplified as the other exemplified method of introducing a sterol group or a method of increasing the sterol group content as another trialkoxy decane or dialkoxy decane.

具有縮水甘油基之烷氧基矽烷之水解‧縮合反應物之分子中的環氧基之比例過少時,存在交聯效果較少,本發明之永久抗蝕劑之物性降低之情形,故環氧當量較好的是1000以下,進而較好的是700以下,最好的是350以下。When the ratio of the epoxy group in the molecule of the hydrolysis/densation reactant of the glycidyl group is too small, the crosslinking effect is small, and the physical properties of the permanent resist of the present invention are lowered, so epoxy The equivalent is preferably 1,000 or less, more preferably 700 or less, and most preferably 350 or less.

具有縮水甘油基之烷氧基矽烷之水解‧縮合反應物之分子量並無特別限定,但過大時,存在對鹼性顯影液之溶解性或分散性降低,於鹼性顯影後之基板表面殘留抗蝕劑殘渣之情形,故質量平均分子量較好的是20000以下,進而較好的是15000以下,最好的是10000以下。The molecular weight of the hydrolysis/densation reactant of the glycidyl group having a glycidyl group is not particularly limited, but when it is too large, the solubility or dispersibility of the alkaline developer is lowered, and the surface of the substrate after alkali development remains resistant. In the case of the etchant residue, the mass average molecular weight is preferably 20,000 or less, more preferably 15,000 or less, and most preferably 10,000 or less.

具有縮水甘油基之烷氧基矽烷之水解‧縮合反應物較好的是具有矽醇基。具有縮水甘油基之烷氧基矽烷之水解‧縮合反應物中之矽醇基之含量較好的是1~30質量%,進而較好的是3~25質量%。The hydrolysis/condensation reactant of the alkoxydecane having a glycidyl group preferably has a decyl group. The content of the sterol group in the hydrolysis/densation reaction of the glycidyl group having a glycidyl group is preferably from 1 to 30% by mass, more preferably from 3 to 25% by mass.

將三烷氧基矽烷化合物用於反應的具有縮水甘油基之烷氧基矽烷之水解‧縮合反應物存在具有由Si-O-Si鍵所引起之交聯結構之情形,亦存在由於該交聯結構而成為例如梯狀(ladder狀)、籠狀、環狀等結構之情形。將具有縮水甘油基之三烷氧基矽烷化合物及其他三烷氧基矽烷化合物用於反應中的具有縮水甘油基之烷氧基矽烷之水解‧縮合反應物例如可以下述通式(9)表示:The hydrolysis/densation reactant of a glycidyl group-containing alkoxysilane having a trialkoxy decane compound is used in the presence of a crosslinked structure caused by a Si—O—Si bond, and also due to the crosslinking. The structure is a structure such as a ladder shape, a cage shape, or a ring shape. The hydrolysis/densation reaction product of the glycidyl group-containing alkoxysilane having a glycidyl group-containing trialkoxy decane compound and other trialkoxy decane compound can be represented, for example, by the following formula (9). :

[化12][化12]

(式中,G表示具有縮水甘油基之基,R28 表示可相同亦可不同之碳數1~10之烷基或苯基,i表示2以上之數,k表示0或1以上之數,h表示0~2之數,j表示0~2之數。其中,h×i+j×k不超過h+i+2)。(wherein G represents a group having a glycidyl group, R 28 represents an alkyl group or a phenyl group having 1 to 10 carbon atoms which may be the same or different, i represents a number of 2 or more, and k represents a number of 0 or more, h represents the number of 0~2, and j represents the number of 0~2, where h×i+j×k does not exceed h+i+2).

於上述通式(9)中,G表示具有縮水甘油基之基,R28 表示可相同亦可不同之碳數1~10之烷基或苯基。就耐熱性方面而言,R28 較好的是甲基、乙基及苯基,進而較好的是甲基及苯基,最好的是甲基。In the above formula (9), G represents a group having a glycidyl group, and R 28 represents an alkyl group or a phenyl group having 1 to 10 carbon atoms which may be the same or different. In terms of heat resistance, R 28 is preferably a methyl group, an ethyl group or a phenyl group, more preferably a methyl group and a phenyl group, and most preferably a methyl group.

i表示2以上之數,k表示0或1以上之數,h表示0~2之數。h×i+j×k表示分子中之矽醇基之合計量,但其個數不超過h+i+2。i represents a number of 2 or more, k represents a number of 0 or more, and h represents a number of 0 to 2. h×i+j×k represents the total amount of sterol groups in the molecule, but the number does not exceed h+i+2.

上述通式(9)之前半部分The first half of the above formula (9)

[化13][Chemistry 13]

係源自具有縮水甘油基之三烷氧基矽烷化合物之部分,上述通式(9)之後半部分Is derived from a portion of a trialkoxy decane compound having a glycidyl group, the latter half of the above formula (9)

[化14][Chemistry 14]

係源自其他三烷氧基矽烷化合物之部分。It is derived from parts of other trialkoxy decane compounds.

就高溫熱歷程後之耐化學品性提高之方面而言,相對於(A)矽氧樹脂100質量份,作為(B)成分之具有縮水甘油基之矽氧烷化合物之含量較好的是1~100質量份,進而較好的是3~50質量份,最好的是5~20質量份。With respect to the improvement of the chemical resistance after the high-temperature heat history, the content of the glycidyl group-containing oxirane compound as the component (B) is preferably 100 parts by mass of the (A) oxime resin. 1 to 100 parts by mass, more preferably 3 to 50 parts by mass, most preferably 5 to 20 parts by mass.

繼而,對作為本發明之(C)成分之重氮萘醌類進行說明。Next, the diazonaphthoquinones which are the components (C) of the present invention will be described.

作為可用於本發明之重氮萘醌類,若為已知可用於感光性材料之重氮萘醌類化合物,則並無特別限定,其中較好的是具有酚性羥基之化合物之氫原子經下述式(10)The diazonaphthoquinone which can be used in the present invention is not particularly limited as long as it is a diazonaphthoquinone compound which is known to be used for a photosensitive material, and among them, a hydrogen atom having a phenolic hydroxyl group is preferred. The following formula (10)

[化15][化15]

所取代之化合物(4-重氮萘醌磺酸酯)或經下述式(11)The substituted compound (4-diazonaphthoquinone sulfonate) or the following formula (11)

[化16][Chemistry 16]

所取代之化合物(5-重氮萘醌磺酸酯)。Substituted compound (5-diazonaphthoquinone sulfonate).

作為上述重氮萘醌類之較佳具體例,例如可例示以下之式(12)~(17)所表示之化合物及該等之位置異構物等。Preferred examples of the diazonaphthoquinones include, for example, the compounds represented by the following formulas (12) to (17), and the positional isomers thereof.

[化17][化17]

(式中,Q為以上述式(10)或式(11)所表示之基或氫原子,且不全部為氫原子。)(wherein Q is a group represented by the above formula (10) or (11) or a hydrogen atom, and not all of them are hydrogen atoms.)

[化18][化18]

(式中,Q為以上述式(10)或式(11)所表示之基或氫原子,且不全部為氫原子。)(wherein Q is a group represented by the above formula (10) or (11) or a hydrogen atom, and not all of them are hydrogen atoms.)

[化19][Chemistry 19]

(式中,Q為以上述式(10)或式(11)所表示之基或氫原子,且不全部為氫原子。)(wherein Q is a group represented by the above formula (10) or (11) or a hydrogen atom, and not all of them are hydrogen atoms.)

[化20][Chemistry 20]

(式中,Q為以上述式(10)或式(11)所表示之基或氫原子,且不全部為氫原子。)(wherein Q is a group represented by the above formula (10) or (11) or a hydrogen atom, and not all of them are hydrogen atoms.)

[化21][Chem. 21]

(式中,Q為以上述式(10)或式(11)所表示之基或氫原子,且不全部為氫原子。)(wherein Q is a group represented by the above formula (10) or (11) or a hydrogen atom, and not all of them are hydrogen atoms.)

[化22][化22]

(式中,Q為以上述式(10)或式(11)所表示之基或氫原子,且不全部為氫原子。)(wherein Q is a group represented by the above formula (10) or (11) or a hydrogen atom, and not all of them are hydrogen atoms.)

以式(10)所表示之基在i線(波長為365nm)區域具有吸收,故適於i線曝光,以式(11)所表示之基在較廣範圍之波長區域存在吸收,故適於較廣範圍之波長下之曝光,因此較好的是根據曝光之波長而選擇以式(10)所表示之基、以式(11)所表示之基中之任一者。The base represented by the formula (10) has absorption in the i-line (wavelength: 365 nm) region, so it is suitable for i-line exposure, and the base represented by the formula (11) has absorption in a wide range of wavelength regions, so it is suitable for The exposure at a wide range of wavelengths is preferably selected from the group represented by the formula (10) and the group represented by the formula (11) depending on the wavelength of the exposure.

就本發明之永久抗蝕劑之顯影性、微細加工性方面而言,較好的是相對於(A)矽氧樹脂100質量份,作為(C)成分之重氮萘醌類之含量為0.1~10質量份,較好的是1~5質量份。In terms of developability and fine workability of the permanent resist of the present invention, it is preferred that the content of the diazonaphthoquinone as the component (C) is 0.1 part by mass based on 100 parts by mass of the (A) epoxy resin. ~10 parts by mass, preferably 1 to 5 parts by mass.

繼而,對作為本發明之(D)成分之有機溶劑進行說明。Next, an organic solvent which is the component (D) of the present invention will be described.

可用於本發明之(D)有機溶劑若為可溶解或分散上述(A)矽氧樹脂、(B)具有縮水甘油醚基之矽氧烷化合物、及(C)重氮萘醌類之有機溶劑,則並無特別限定,較好的是可於25℃下溶解1質量%以上之水的有機溶劑,作為上述有機溶劑,除了保護基第三丁基之脫離之說明中所例示之有機溶劑以外,亦可列舉:γ-丁內酯、γ-戊內酯、δ-戊內酯、碳酸乙二酯、碳酸丙二酯、碳酸二甲酯等。The organic solvent (D) which can be used in the present invention is an organic solvent which can dissolve or disperse the above (A) anthracene resin, (B) a glycidyl ether group-containing oxirane compound, and (C) a diazonaphthoquinone group. Further, it is not particularly limited, and an organic solvent capable of dissolving 1% by mass or more of water at 25 ° C is preferable as the organic solvent, except for the organic solvent exemplified in the description of the removal of the protective group of the third butyl group. Further, γ-butyrolactone, γ-valerolactone, δ-valerolactone, ethylene carbonate, propylene carbonate, dimethyl carbonate, and the like can be also exemplified.

於使用以上述通式(1)所表示之基中之羧基或以上述通式(2)所表示之基中之酚性羥基經保護之化合物,例如以上述通式(3a)所表示之環狀矽氧烷化合物之情形時,可將第三丁基之脫離反應中所使用之有機溶劑直接用作本發明之(D)成分之有機溶劑。A compound which is protected by a carboxyl group in the group represented by the above formula (1) or a phenolic hydroxyl group in the group represented by the above formula (2), for example, a ring represented by the above formula (3a) In the case of the oxirane compound, the organic solvent used in the desorption reaction of the third butyl group can be directly used as the organic solvent of the component (D) of the present invention.

就使用本發明之正型感光性組合物形成永久抗蝕劑時之形成性及所得之永久抗蝕劑之物性等方面而言,較好的是相對於(A)矽氧樹脂100質量份,作為(D)成分之有機溶劑之含量為10~10000質量份,更好的是100~1000質量份。The formability of the permanent resist formed by using the positive photosensitive composition of the present invention and the physical properties of the obtained permanent resist are preferably 100 parts by mass relative to (A) the epoxy resin. The content of the organic solvent as the component (D) is from 10 to 10,000 parts by mass, more preferably from 100 to 1,000 parts by mass.

本發明之正型感光性組合物係使(A)矽氧樹脂、(B)具有縮水甘油醚基之矽氧烷化合物、(C)重氮萘醌類及(D)有機溶劑溶解或分散者,亦可視需要例如利用孔徑為0.2μm左右之過濾器進行過濾後,再供於使用。The positive photosensitive composition of the present invention dissolves or disperses (A) an oxirane resin, (B) a glycidyl ether group-containing oxirane compound, (C) a diazonaphthoquinone, and (D) an organic solvent. It can also be filtered by a filter having a pore diameter of about 0.2 μm, for example, and then used.

本發明之正型感光性組合物除此以外,可視需要調配塑化劑、觸變性賦予劑、光酸產生劑、熱酸產生劑、分散劑、消泡劑、顏料、染料等。In addition to the positive photosensitive composition of the present invention, a plasticizer, a thixotropic imparting agent, a photoacid generator, a thermal acid generator, a dispersant, an antifoaming agent, a pigment, a dye, or the like may be blended as needed.

繼而,對本發明之永久抗蝕劑進行說明。本發明之永久抗蝕劑係使用上述正型感光性組合物而製作。以下,按步驟順序對本發明之永久抗蝕劑之較佳製造方法之一例進行說明。Next, the permanent resist of the present invention will be described. The permanent resist of the present invention is produced by using the above positive photosensitive composition. Hereinafter, an example of a preferred method for producing a permanent resist of the present invention will be described in order of steps.

(第1步驟)塗膜形成步驟(Step 1) Coating film forming step

塗膜形成步驟係將所製備之本發明之正型感光性組合物塗佈於作為對象之基材上而形成塗膜之步驟。作為對象之基材若為具有對正型感光性組合物中之有機溶劑等之耐化學品性、以及對第4步驟之藉由鹼性溶液之顯影及第6步驟之處理的耐熱性等之材料,則並無特別限定,可列舉玻璃、金屬、半導體等。尤其可列舉需要作為絕緣層之永久抗蝕劑的液晶顯示器之TFT表面等作為較佳者。The coating film forming step is a step of applying the prepared positive photosensitive composition of the present invention onto a target substrate to form a coating film. The substrate to be used is a chemical resistance to an organic solvent or the like in the positive photosensitive composition, and heat resistance in the fourth step by the development of the alkaline solution and the treatment in the sixth step. The material is not particularly limited, and examples thereof include glass, metal, and semiconductor. In particular, a TFT surface or the like of a liquid crystal display which is required as a permanent resist of an insulating layer is preferable.

塗佈之方法並無特別限定,例如可利用旋塗法、浸塗法、刀片塗佈法、輥塗法、噴塗法、狹縫塗佈法等各種方法。The method of coating is not particularly limited, and various methods such as a spin coating method, a dip coating method, a blade coating method, a roll coating method, a spray coating method, and a slit coating method can be used.

其後,為了自由塗佈於上述基材上之塗佈物所形成之正型感光性組合物層中除去(D)有機溶劑,而進行預烘烤(pre-bake)。經預烘烤之正型感光性組合物層對鹼性溶液具有難溶性,於下一曝光步驟中,藉由照射光而使經光照射之部分(以下,有時稱作曝光部分)成為鹼溶性。Thereafter, the (D) organic solvent is removed from the positive photosensitive composition layer formed by coating the coating material on the substrate, and pre-bake is performed. The pre-baked positive photosensitive composition layer is poorly soluble in an alkaline solution, and in the next exposure step, a portion irradiated with light (hereinafter, sometimes referred to as an exposed portion) becomes a base. Solubility.

預烘烤之溫度係根據所使用之有機溶劑之種類而不同,若溫度過低,則存在有機溶劑之殘留分變多,而成為曝光感光度或解像度降低原因之情形,又,若溫度過高,則存在藉由預烘烤而進行塗膜整體之硬化,經光照射之部分對鹼性顯影液之溶解性降低,結果曝光感光度或解像度降低之情形,故較好的是60~140℃,進而較好的是70~120℃。預烘烤之時間係根據所使用之有機溶劑之種類與預烘烤之溫度而不同,較好的是30秒鐘~10分鐘,進而較好的是1~5分鐘。The pre-baking temperature varies depending on the type of the organic solvent to be used. If the temperature is too low, there is a large residual variation of the organic solvent, which causes a decrease in exposure sensitivity or resolution, and if the temperature is too high. Further, the entire coating film is hardened by prebaking, and the solubility of the portion irradiated with light to the alkaline developing solution is lowered, and as a result, the exposure sensitivity or the resolution is lowered, so it is preferably 60 to 140 ° C. Further preferably 70 to 120 ° C. The prebaking time varies depending on the kind of the organic solvent to be used and the prebaking temperature, and is preferably from 30 seconds to 10 minutes, and more preferably from 1 to 5 minutes.

亦可於將本發明之正型感光性組合物塗佈於作為對象之基材上後,直接進行預烘烤,但就本發明之永久抗蝕劑之高熱歷程後之物性、耐化學品性等提高之方面而言,較好的是於預烘烤之前,於室溫~未達60℃之溫度、常壓或減壓下,以使正型感光性組合物層中之有機溶劑之濃度成為5質量%以下之方式使有機溶劑揮發後,再進行預烘烤。The positive photosensitive composition of the present invention may be directly pre-baked after being applied to a target substrate, but the physical properties and chemical resistance of the permanent resist of the present invention after the high heat history may be used. In terms of improvement, it is preferred to adjust the concentration of the organic solvent in the positive photosensitive composition layer at room temperature to below 60 ° C, at normal pressure or under reduced pressure before prebaking. After the organic solvent is volatilized to be 5% by mass or less, prebaking is performed.

預烘烤後之正型感光性組合物層之厚度係根據本發明之永久抗蝕劑所使用之用途而不同,但並無特別限定,為0.1μm~100μm,較好的是0.3μm~10μm即可。The thickness of the positive photosensitive composition layer after prebaking differs depending on the use of the permanent resist of the present invention, but is not particularly limited and is 0.1 μm to 100 μm, preferably 0.3 μm to 10 μm. Just fine.

(第2步驟)曝光步驟(Step 2) Exposure step

曝光步驟係對經預烘烤之正型感光性組合物層照射經圖案化之光,而提高曝光部分之鹼溶性的步驟。經預烘烤之正型感光性組合物層對鹼性溶液具有難溶性,但藉由光照射而使曝光部分之重氮萘醌類分解,變成茚甲酸,從而可溶解、分散於鹼性溶液中。The exposing step is a step of irradiating the pre-baked positive photosensitive composition layer with the patterned light to increase the alkali solubility of the exposed portion. The pre-baked positive photosensitive composition layer is poorly soluble in an alkaline solution, but the diazonaphthoquinone in the exposed portion is decomposed by light irradiation to become hydrazinecarboxylic acid, thereby being soluble and dispersible in an alkaline solution. in.

照射光並無特別限定,若為可提高經預烘烤之正型感光性組合物層之光照射部之鹼溶性的能量之光即可,例如為10~1000mJ/cm2 ,較好的是40~300mJ/cm2The light to be irradiated is not particularly limited, and may be light having an alkali solubility of the light-irradiated portion of the pre-baked positive photosensitive composition layer, and is preferably, for example, 10 to 1000 mJ/cm 2 . 40~300mJ/cm 2 .

又,照射光之波長可為可見光,亦可為紫外光,並無特別限定,使用高壓水銀燈、超高壓水銀燈等,於使用4-重氮萘醌磺酸酯類作為(C)重氮萘醌類之情形時照射以i線(365nm)為主體之窄波長之光即可,於使用5-重氮萘醌磺酸酯類作為(C)重氮萘醌類之情形時,照射包括i線(365nm)、h線(405nm)及g線(436nm)之寬波長之光即可。Further, the wavelength of the irradiation light may be visible light or ultraviolet light, and is not particularly limited, and a high pressure mercury lamp, an ultrahigh pressure mercury lamp, or the like is used, and 4-diazonaphthoquinone sulfonate is used as (C) diazonaphthoquinone. In the case of a class, a narrow-wavelength light mainly composed of an i-line (365 nm) may be irradiated, and when a 5-diazonaphthoquinone sulfonate is used as the (C) diazonaphthoquinone, the irradiation includes an i-line. Light of a wide wavelength (365 nm), h line (405 nm), and g line (436 nm) may be used.

上述照射光之圖案化之方法並無特別限定,可為先前已知之方法,例如經由光罩等之光照射方法,亦可為使用雷射光之選擇性光照射方法。The method of patterning the irradiation light is not particularly limited, and may be a previously known method, for example, a light irradiation method such as a photomask or a selective light irradiation method using laser light.

(第3步驟)顯影步驟(Step 3) development step

顯影步驟係藉由使用顯影液除去曝光步驟中經光照射而鹼溶性提高之部分,從而獲得特定之圖案的步驟。The developing step is a step of obtaining a specific pattern by removing a portion where the alkali solubility is improved by light irradiation in the exposure step by using a developing solution.

作為顯影方法,例如可使用淺灘式顯影法、浸漬法、噴淋法、噴霧法等中之任一方法。As the developing method, for example, any of a shoal development method, a dipping method, a shower method, a spray method, and the like can be used.

顯影時間係根據(A)矽氧樹脂或(B)具有縮水甘油醚基之矽氧烷化合物之種類及分子量、顯影液之溫度等而不同,通常為30~180秒鐘。The development time varies depending on the type and molecular weight of the (A) oxirane resin or (B) the glycidyl ether group having a glycidyl ether group, the temperature of the developer, and the like, and is usually 30 to 180 seconds.

顯影步驟中所使用之顯影液若為可將曝光部分溶解或分散於液中而除去者,則並無特別限定,例如可使用:氫氧化鈉、氫氧化鉀、碳酸鈉、碳酸鉀、矽酸鈉、氨等無機鹼類;乙胺、正丙胺等一級胺類;二乙胺、二正丙胺等二級胺類;三甲胺、甲基二乙胺、二甲基乙胺、三乙胺等三級胺類;二甲基乙醇胺、甲基二乙醇胺、三乙醇胺等三級烷醇胺類;吡咯、哌啶、N-甲基哌啶、N-甲基吡咯啶、1,8-二氮雜雙環[5.4.0]-7-十一烯、1,5-二氮雜雙環[4.3.0]-5-壬烯等環狀三級胺類;吡啶、三甲基吡啶、二甲基吡啶、喹啉等芳香族三級胺類;以及四甲基氫氧化銨、四乙基氫氧化銨等四級銨鹽之水溶液等鹼類之水溶液,其濃度較好的是先前之正型感光性組合物層之除去中所使用之顯影液之鹼濃度。該等鹼類之水溶液亦可進而含有適量之甲醇、乙醇等水溶性有機溶劑及/或界面活性劑。The developer to be used in the development step is not particularly limited as long as it can be dissolved or dispersed in the liquid, and can be used, for example, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate or citric acid. Inorganic bases such as sodium and ammonia; primary amines such as ethylamine and n-propylamine; secondary amines such as diethylamine and di-n-propylamine; trimethylamine, methyldiethylamine, dimethylethylamine, triethylamine, etc. Tertiary amines; tertiary alkanolamines such as dimethylethanolamine, methyldiethanolamine, triethanolamine; pyrrole, piperidine, N-methylpiperidine, N-methylpyrrolidine, 1,8-diaza a cyclic tertiary amine such as heterobicyclo[5.4.0]-7-undecene or 1,5-diazabicyclo[4.3.0]-5-nonene; pyridine, trimethylpyridine, dimethyl An aromatic tertiary amine such as pyridine or quinoline; and an aqueous solution of an alkali such as an aqueous solution of a tetra-ammonium salt such as tetramethylammonium hydroxide or tetraethylammonium hydroxide, the concentration of which is better than the previous positive photosensitive The alkali concentration of the developer used in the removal of the composition layer. The aqueous solution of the base may further contain an appropriate amount of a water-soluble organic solvent such as methanol or ethanol and/or a surfactant.

利用顯影液除去曝光部分後,較好的是藉由流水或噴淋而以水進行沖洗,亦可視需要於50~120℃之範圍內使其脫水乾燥。After the exposed portion is removed by the developer, it is preferred to rinse with water by running water or spraying, and it may be dehydrated and dried in the range of 50 to 120 °C as needed.

(第4步驟)漂白曝光步驟(Step 4) Bleach exposure step

漂白曝光步驟係對鹼溶液處理中所殘存之正型感光性組合物層(以下有時稱作抗蝕層)之整體照射光,而提高可見光穿透性的步驟。The bleaching exposure step is a step of irradiating light to the entire positive photosensitive composition layer (hereinafter sometimes referred to as a resist layer) remaining in the alkali solution treatment to improve visible light transmittance.

抗蝕層由於含有重氮萘醌類,故著色為淡黃色或淡褐色。藉由對抗蝕層照射光,殘存之未反應之(C)重氮萘醌類產生光分解,變成於可見光區域無吸收之茚甲酸,可見光穿透性提高,適合於用作液晶顯示裝置、有機EL顯示裝置等中所使用之主動矩陣基板用之永久抗蝕劑。Since the resist layer contains diazonaphthoquinone, it is colored yellowish or light brown. By irradiating the resist layer with light, the remaining unreacted (C) diazonaphthoquinones are photodecomposed, and become antimony formic acid which is not absorbed in the visible light region, and has improved visible light transmittance, and is suitable for use as a liquid crystal display device or organic A permanent resist for an active matrix substrate used in an EL display device or the like.

漂白曝光步驟中之照射光並無特別限定,例如照射10~1000mJ/cm2 、較好的是40~600mJ/cm2 之光即可。又,照射光之波長可為可見光,亦可為紫外光,並無特別限定,但較好的是與(第2步驟)曝光步驟同樣地,根據所使用之(C)重氮萘醌類而選擇照射光之波長。The irradiation light in the bleaching exposure step is not particularly limited, and for example, it is preferably irradiated with light of 10 to 1000 mJ/cm 2 , preferably 40 to 600 mJ/cm 2 . Further, the wavelength of the irradiation light may be visible light or ultraviolet light, and is not particularly limited, but it is preferably the same as the (second step) exposure step, depending on the (C) diazonaphthoquinone used. Select the wavelength of the illumination light.

(第5步驟)後烘烤步驟(Step 5) post-baking step

經漂白曝光之抗蝕層之可見光穿透性提高,鹼溶性亦提高。後烘烤步驟係對上述經漂白曝光之抗蝕層進行120℃以上之熱處理,使抗蝕層中之矽氧樹脂進行熱交聯,從而賦予永久抗蝕劑所要求之耐熱性、耐化學品性、耐經時變化性者。The bleached exposed resist layer has improved visible light transmittance and improved alkali solubility. In the post-baking step, the above-mentioned bleach-exposed resist layer is subjected to heat treatment at 120 ° C or higher to thermally crosslink the epoxy resin in the resist layer, thereby imparting heat resistance and chemical resistance required for the permanent resist. Sexual and time-changing.

一般認為,於本發明中,作為正型感光性組合物之(B)成分之具有縮水甘油醚基之矽氧烷化合物係發揮交聯劑之功能而獲得迄今為止未有之高熱歷程後之耐化學品性者。後烘烤較好的是於氮、氦、氬等惰性氣體環境下,於120~400℃之溫度下進行15分鐘~2小時,更好的是於120~350℃之溫度下進行15分鐘~2小時,進而較好的是於200~350℃之溫度下進行15分鐘~2小時。In the present invention, the glycidyl ether group having a glycidyl ether group as the component (B) of the positive photosensitive composition functions as a crosslinking agent to obtain a resistance after the high heat history which has not been hitherto. Chemically. The post-baking is preferably carried out in an inert gas atmosphere such as nitrogen, helium or argon at a temperature of 120 to 400 ° C for 15 minutes to 2 hours, more preferably at a temperature of 120 to 350 ° C for 15 minutes. 2 hours, and further preferably 15 minutes to 2 hours at a temperature of 200 to 350 °C.

本發明之永久抗蝕劑不僅透明性、絕緣性、耐熱性、耐化學品性優異,而且300~350℃左右之高溫下之熱歷程(高熱歷程)後之透明性、絕緣性、耐化學品性亦優異,故作為液晶顯示裝置、有機EL顯示裝置等中所使用之主動矩陣基板用之層間絕緣膜(層)或平坦化膜,尤其是其中包括以多晶矽薄膜為活性層之TFT的主動矩陣基板用之層間絕緣膜(層)或平坦化膜而極其有用。The permanent resist of the present invention is excellent not only in transparency, insulation, heat resistance, chemical resistance, but also in heat history (high heat history) at a high temperature of about 300 to 350 ° C, transparency, insulation, and chemical resistance. An interlayer insulating film (layer) or a planarizing film for an active matrix substrate used in a liquid crystal display device, an organic EL display device, or the like, in particular, an active matrix including a TFT having a polycrystalline germanium film as an active layer. It is extremely useful for an interlayer insulating film (layer) for a substrate or a planarizing film.

本發明之永久抗蝕劑亦可用於半導體元件之層間絕緣膜。又,亦可用於半導體元件之晶圓塗層材料(表面保護膜、凸塊保護膜、MCM(Multi-Chip Module,多晶片模組)層間保護膜、接面塗層)、封裝材(密封材、黏晶材)。The permanent resist of the present invention can also be used for an interlayer insulating film of a semiconductor element. Moreover, it can also be used for wafer coating materials for semiconductor devices (surface protection film, bump protection film, MCM (Multi-Chip Module) interlayer protection film, junction coating), and packaging material (sealing material) , bonded crystal).

本發明之永久抗蝕劑亦可用作半導體元件、多層配線板等之絕緣膜。作為半導體元件,可列舉:二極體、電晶體、化合物半導體、熱敏電阻、變阻器、閘流體等分離式半導體元件:DRAM(Dynamic Random Access Memory,動態隨機存取記憶體)、SRAM(Static Random Access Memory,靜態隨機存取記憶體)、EPROM(Erasable Programmable Read Only Memory,可抹除可程式化唯讀記憶體)、遮罩式ROM(Mask Read Only Memory,遮罩式唯讀記憶體)、EEPROM(Electrical Erasable Programmable Read Only Memory,電子可抹除可程式化唯讀記憶體)、快閃記憶體(flash memory)等記憶元件:微處理器、DSP(Digital Signal Processor,數位訊號處理器)、ASIC(Application Specific Integrated Circuit,特殊應用積體電路)等理論電路元件:MMIC(Monolithic Microwave Integrated Circuits,單晶微波積體電路)所代表之化合物半導體等積體電路元件;混成積體電路(hybrid IC)、發光二極體、電荷結合元件等光電轉換元件等。又,作為多層配線板,可列舉MCM等高密度配線板等。The permanent resist of the present invention can also be used as an insulating film for a semiconductor element, a multilayer wiring board or the like. Examples of the semiconductor element include discrete semiconductor elements such as a diode, a transistor, a compound semiconductor, a thermistor, a varistor, and a thyristor: DRAM (Dynamic Random Access Memory) and SRAM (Static Random) Access Memory, Static Random Access Memory, EPROM (Erasable Programmable Read Only Memory), Masked Only Memory (Mask Read Only Memory), Memory components such as EEPROM (Electrical Erasable Programmable Read Only Memory) and flash memory: microprocessor, DSP (Digital Signal Processor), Theoretical circuit components such as ASIC (Application Specific Integrated Circuit): integrated circuit components such as compound semiconductors represented by MMIC (Monolithic Microwave Integrated Circuits); hybrid integrated circuits (hybrid IC) ), a photoelectric conversion element such as a light-emitting diode or a charge-bonding element. Moreover, as a multilayer wiring board, a high-density wiring board, such as MCM, etc. are mentioned.

實施例Example

以下列舉實施例,對本發明進行進一步說明,但本發明並不限定於該等。The present invention will be further illustrated by the following examples, but the invention is not limited thereto.

再者,矽醇基之含量係於吡啶溶液中使試料與三甲基氯矽烷反應,使矽醇基變成三甲基矽烷醚基後,利用四甲基氫氧化銨((CH3 )4 NOH)水溶液進行處理,使C-O-Si鍵水解,由反應後之重量增加率進行倒算而求出。Further, the content of the sterol group is determined by reacting the sample with trimethylchlorosilane in a pyridine solution to convert the sterol group into a trimethyldecane ether group, and then using tetramethylammonium hydroxide ((CH 3 ) 4 NOH The aqueous solution is treated to hydrolyze the CO-Si bond, and is calculated by recalculating the weight increase rate after the reaction.

[(A)矽氧樹脂(a)之製造][(A) Manufacture of enamel resin (a)]

於甲苯300質量份中,添加2,4,6,8-四甲基環四矽氧烷100質量份、4-乙烯基苯甲酸-第三丁酯85質量份、4-第三丁氧基苯乙烯110質量份、三甲氧基乙烯基矽烷93質量份、及鉑-二乙烯基四甲基二矽氧烷錯合物(Karstedt觸媒)0.0001質量份,一面攪拌,一面於60℃下反應15小時。100 parts by mass of 2,4,6,8-tetramethylcyclotetraoxane, 85 parts by mass of 4-vinylbenzoic acid-t-butyl ester, and 4-tert-butoxy group are added to 300 parts by mass of toluene. 110 parts by mass of styrene, 93 parts by mass of trimethoxyvinyl decane, and 0.0001 parts by mass of a platinum-divinyltetramethyldioxane complex (Karstedt catalyst) were reacted at 60 ° C while stirring. 15 hours.

於60℃下,自該反應液中減壓蒸餾除去溶劑,從而獲得環狀矽氧烷化合物(a-1)(相當於上述通式(3a)之化合物)。環狀矽氧烷化合物(a-1)於25℃下為黏稠之液體,於藉由1 H-NMR之分析中未見源自Si-H基之氫原子的4.3~5.0ppm之波峰,藉由GPC之分析之結果,質量平均分子量為900(理論分子量為933.1),確認源自未反應之4-乙烯基苯甲酸-第三丁酯的峰面積比消失至0.5%以下。The solvent was distilled off under reduced pressure from the reaction mixture at 60 ° C to obtain a cyclic oxirane compound (a-1) (corresponding to the compound of the above formula (3a)). The cyclic siloxane compound (a-1) was a viscous liquid at 25 ° C, and no peak of 4.3 to 5.0 ppm derived from a hydrogen atom derived from Si-H group was observed by 1 H-NMR analysis. As a result of analysis by GPC, the mass average molecular weight was 900 (theoretical molecular weight was 933.1), and it was confirmed that the peak area ratio derived from unreacted 4-vinylbenzoic acid-t-butyl ester disappeared to 0.5% or less.

繼而,於上述環狀矽氧烷化合物(a-1)之100質量份中,添加苯基三甲氧基矽烷(相當於上述通式(4)之化合物)40質量份、甲苯200質量份,一面於10℃下進行冰浴冷卻攪拌,一面以30分鐘滴加5%之草酸水溶液50質量份。於使系統內溫度保持於10℃之狀態下攪拌15小時後,於50℃、減壓下進行回流脫水‧脫醇處理,於50℃、減壓下,進行溶劑交換而將溶劑甲苯換成1-甲氧基-2-丙醇乙酸酯(以下稱作PGMEA),從而獲得中間產物(a-2)之25%之PGMEA溶液。Then, 40 parts by mass of phenyltrimethoxydecane (corresponding to the compound of the above formula (4)) and 200 parts by mass of toluene are added to 100 parts by mass of the above cyclic siloxane compound (a-1). After cooling and stirring in an ice bath at 10 ° C, 50 parts by mass of a 5% aqueous oxalic acid solution was added dropwise over 30 minutes. After stirring for 15 hours while maintaining the temperature in the system at 10 ° C, the mixture was reflux-dehydrated and de-alcoholated at 50 ° C under reduced pressure, and solvent exchange was carried out at 50 ° C under reduced pressure to replace the solvent toluene. -Methoxy-2-propanol acetate (hereinafter referred to as PGMEA), thereby obtaining a 25% PGMEA solution of the intermediate product (a-2).

為了脫離第三丁基,添加中間產物(a-2)之25%之PGMEA溶液400質量份、三氟化硼二乙醚錯合物3質量份,於80℃下攪拌3小時之後,於減壓下進行100質量份之脫溶劑處理,添加酸性物質之吸附劑(協和化學工業製造,商品名:Kyowaad 500SH)10質量份後,於80℃下攪拌1小時而獲得漿料溶液,對於該漿料溶液,藉由過濾而除去固形物,從而獲得本發明之(A)矽氧樹脂(a)之30%之PGMEA溶液。矽氧樹脂(a)之藉由GPC分析而得之質量平均分子量為6400,矽醇基含量為5.4質量%。In order to remove the third butyl group, 400 parts by mass of a PGMEA solution of 25% of the intermediate product (a-2) and 3 parts by mass of a boron trifluoride diethyl ether complex were added, and the mixture was stirred at 80 ° C for 3 hours, followed by decompression. 100 parts by mass of the desolvation treatment was carried out, and after adding 10 parts by mass of an acidic adsorbent (manufactured by Kyowa Chemical Industry Co., Ltd., trade name: Kyowaad 500SH), the mixture was stirred at 80 ° C for 1 hour to obtain a slurry solution. The solution was removed by filtration to obtain a PGMEA solution of 30% of the (A) oxime resin (a) of the present invention. The mass average molecular weight of the epoxy resin (a) by GPC analysis was 6,400, and the sterol group content was 5.4% by mass.

[(A)矽氧樹脂(b)之製造][(A) Manufacture of epoxy resin (b)]

於上述環狀矽氧烷化合物(a-1)之100質量份中,添加苯基三甲氧基矽烷8質量份、甲苯200質量份,一面於10℃下進行冰浴冷卻攪拌,一面以30分鐘滴加5%之草酸水溶液50質量份。於使系統內溫度保持於10℃之狀態下攪拌15小時之後,於50℃、減壓下進行回流脫水‧脫醇處理,於50℃、減壓下進行甲苯與PGMEA之溶劑交換,從而獲得中間產物(b-2)之25%之PGMEA溶液。To 100 parts by mass of the above-mentioned cyclic siloxane compound (a-1), 8 parts by mass of phenyltrimethoxydecane and 200 parts by mass of toluene were added, and the mixture was stirred and cooled in an ice bath at 10 ° C for 30 minutes. 50 parts by mass of a 5% aqueous solution of oxalic acid was added dropwise. After stirring for 15 hours while maintaining the temperature in the system at 10 ° C, reflux dehydration and decoholization were carried out under reduced pressure at 50 ° C, and solvent exchange of toluene and PGMEA was carried out at 50 ° C under reduced pressure to obtain an intermediate portion. 25% of the PGMEA solution of product (b-2).

以下,進行與上述(A)矽氧樹脂(a)相同之操作,從而獲得本發明之(A)矽氧樹脂(b)之30%之PGMEA溶液。矽氧樹脂(b)之藉由GPC分析而得之質量平均分子量為9500,矽醇基含量為4.2質量%。Hereinafter, the same operation as the above (A) oxime resin (a) was carried out to obtain a PGMEA solution of 30% of the (A) oxime resin (b) of the present invention. The mass average molecular weight of the epoxy resin (b) by GPC analysis was 9,500, and the sterol group content was 4.2% by mass.

[(A)矽氧樹脂(c)之製造][(A) Manufacture of enamel resin (c)]

於甲苯200質量份中添加苯基三甲氧基矽烷40質量份,一面於10℃下進行冰浴冷卻攪拌,一面以1小時滴加5%之草酸水溶液50質量份後,進而於10℃下攪拌3小時。於該反應液中,一面於10℃下進行冰浴冷卻攪拌,一面以1小時滴加2-(4-第三丁氧基羰基苯基)乙基三甲氧基矽烷44質量份與2-(4-第三丁氧基苯基)乙基三甲氧基矽烷56質量份之混合物,然後於10℃下攪拌15小時後,於50℃、減壓下,進行回流脫水‧脫醇處理,於50℃、減壓下進行甲苯與PGMEA之溶劑交換,從而獲得中間產物(c-2)之25%之PGMEA溶液。40 parts by mass of phenyltrimethoxydecane was added to 200 parts by mass of toluene, and while cooling and stirring in an ice bath at 10 ° C, 50 parts by mass of a 5% aqueous oxalic acid solution was added dropwise thereto for 1 hour, and then stirred at 10 ° C. 3 hours. In the reaction mixture, while cooling and stirring in an ice bath at 10 ° C, 44 parts by mass of 2-(4-t-butoxycarbonylphenyl)ethyltrimethoxydecane was added dropwise thereto over 1 hour. a mixture of 4-tert-butoxyphenyl)ethyltrimethoxydecane in 56 parts by mass, and then stirred at 10 ° C for 15 hours, then subjected to reflux dehydration and de-alcohol treatment at 50 ° C under reduced pressure, at 50 The solvent exchange of toluene and PGMEA was carried out under reduced pressure at ° C to obtain a 25% PGMEA solution of the intermediate product (c-2).

以下,進行與矽氧樹脂(a)相同之操作,從而獲得本發明之(A)矽氧樹脂(c)之30%之PGMEA溶液。矽氧樹脂(c)之藉由GPC分析而得之質量平均分子量為6800,矽醇基含量為4.1質量%。Hereinafter, the same operation as the oxime resin (a) was carried out to obtain a PGMEA solution of 30% of the (A) oxime resin (c) of the present invention. The mass average molecular weight of the epoxy resin (c) by GPC analysis was 6,800, and the sterol group content was 4.1% by mass.

[(A)矽氧樹脂(d)之製造][(A) Manufacture of enamel resin (d)]

使用4-乙烯基苯甲酸-第三丁酯212.5質量份,來替代4-乙烯基苯甲酸-第三丁酯85質量份與4-第三丁氧基苯乙烯110質量份,除此以外,進行與上述(A)矽氧樹脂(a)之製造相同之操作,從而獲得本發明之(A)矽氧樹脂(d)之30%之PGMEA溶液。矽氧樹脂(d)之藉由GPC分析而得之質量平均分子量為6300,矽醇基含量為5.1質量%。In place of 21 parts by mass of 4-vinylbenzoic acid-t-butyl ester, 85 parts by mass of 4-vinylbenzoic acid-t-butyl ester and 110 parts by mass of 4-t-butoxystyrene were used. The same operation as in the production of the above (A) oxime resin (a) was carried out to obtain a PGMEA solution of 30% of the (A) oxime resin (d) of the present invention. The mass average molecular weight of the epoxy resin (d) by GPC analysis was 6,300, and the sterol group content was 5.1% by mass.

[(A)矽氧樹脂(e)之製造][(A) Manufacture of enamel resin (e)]

使用2-(4-第三丁氧基羰基苯基)乙基三甲氧基矽烷100質量份,來替代2-(4-第三丁氧基羰基苯基)乙基三甲氧基矽烷44質量份與2-(4-第三丁氧基苯基)乙基三甲氧基矽烷56質量份之混合物,除此以外,進行與上述(A)矽氧樹脂(c)之製造相同之操作,從而獲得本發明之(A)矽氧樹脂(e)之30%之PGMEA溶液。再者,矽氧樹脂(e)之藉由GPC分析而得之質量平均分子量為7200,矽醇基含量為10.1質量%。Using 100 parts by mass of 2-(4-t-butoxycarbonylphenyl)ethyltrimethoxydecane instead of 44 parts by mass of 2-(4-t-butoxycarbonylphenyl)ethyltrimethoxydecane Except for the mixture of 56 parts by mass of 2-(4-t-butoxyphenyl)ethyltrimethoxydecane, the same operation as in the production of the above (A) oxime resin (c) was carried out, thereby obtaining (A) A 30% PGMEA solution of the epoxy resin (e) of the present invention. Further, the mass average molecular weight of the epoxy resin (e) by GPC analysis was 7,200, and the sterol group content was 10.1% by mass.

[(A)矽氧樹脂(f)之製造][(A) Manufacture of oxime resin (f)]

使用4-乙烯基苯甲酸-第三丁酯170質量份與對第三丁氧基苯乙烯36.7質量份,來替代4-乙烯基苯甲酸-第三丁酯85質量份與4-第三丁氧基苯乙烯110質量份,除此以外,進行與上述(A)矽氧樹脂(a)之製造相同之操作,從而獲得本發明之(A)矽氧樹脂(f)之30%之PGMEA溶液。再者,矽氧樹脂(f)之藉由GPC分析而得之質量平均分子量為7800,矽醇基含量為5.1質量%。170 parts by mass of 4-vinylbenzoic acid-t-butyl ester and 36.7 parts by mass of p-tert-butoxystyrene were used instead of 4-vinylbenzoic acid-t-butyl ester 85 parts by mass and 4-third Except for 110 parts by mass of oxystyrene, the same operation as in the production of the above (A) oxime resin (a) is carried out to obtain a PGMEA solution of 30% of the (A) oxirane resin (f) of the present invention. . Further, the mass average molecular weight of the epoxy resin (f) by GPC analysis was 7,800, and the sterol group content was 5.1% by mass.

[比較之矽氧樹脂(g)之製造][Comparison of the manufacture of oxime resin (g)]

使用4-第三丁氧基苯乙烯184質量份,來替代4-乙烯基苯甲酸-第三丁酯85質量份與4-第三丁氧基苯乙烯110質量份,除此以外,進行與上述(A)矽氧樹脂(a)之製造相同之操作,從而獲得不具有以上述通式(1)所表示之基的比較之矽氧樹脂(g)之30%之PGMEA溶液。再者,矽氧樹脂(g)之藉由GPC分析而得之質量平均分子量為6700,矽醇基含量為4.8質量%。184 parts by mass of 4-tert-butoxy styrene was used instead of 85 parts by mass of 4-vinylbenzoic acid-t-butyl ester and 110 parts by mass of 4-t-butoxy styrene, and The above (A) oxirane resin (a) was produced in the same manner to obtain a PGMEA solution of 30% of the comparative oxime resin (g) having no group represented by the above formula (1). Further, the mass average molecular weight of the epoxy resin (g) by GPC analysis was 6,700, and the sterol group content was 4.8% by mass.

[比較之矽氧樹脂(h)之製造][Comparison of the manufacture of oxime resin (h)]

使用2-(4-第三丁氧基苯基)乙基三甲氧基矽烷100質量份,來替代2-(4-第三丁氧基羰基苯基)乙基三甲氧基矽烷44質量份與2-(4-第三丁氧基苯基)乙基三甲氧基矽烷56質量份之混合物,除此以外,進行與上述(A)矽氧樹脂(c)之製造相同之操作,從而獲得不具有以上述通式(1)所表示之基的比較之矽氧樹脂(h)之30%之PGMEA溶液。再者,矽氧樹脂(h)之藉由GPC分析而得之質量平均分子量為7400,矽醇基含量為10.4質量%。Using 100 parts by mass of 2-(4-t-butoxyphenyl)ethyltrimethoxydecane instead of 44 parts by mass of 2-(4-t-butoxycarbonylphenyl)ethyltrimethoxydecane In the same manner as the above-mentioned (A) oxirane resin (c), a mixture of 56 parts by mass of 2-(4-t-butoxyphenyl)ethyltrimethoxy decane was obtained, thereby obtaining no A PGMEA solution having 30% of the comparative oxime resin (h) represented by the above formula (1). Further, the mass average molecular weight of the epoxy resin (h) by GPC analysis was 7,400, and the sterol group content was 10.4% by mass.

[比較之矽氧樹脂(i)之製造][Comparison of the manufacture of oxime resin (i)]

根據日本專利特開2008-116785號公報之實施例之合成例1,於二丙酮醇(以下稱作DAA)157質量份中,添加甲基三甲氧基矽烷100質量份、苯基三甲氧基矽烷78質量份,一面於室溫下進行攪拌,一面以10分鐘滴加0.3%之磷酸水溶液61質量份。其後,於40℃下攪拌30分鐘後,以30分鐘升溫至105℃,進而於105℃下攪拌2小時,藉此獲得比較之矽氧樹脂(i)之DAA溶液。矽氧樹脂(i)之DAA溶液之固形物濃度為39質量%,含水率為1.8重量%,矽氧樹脂(i)之質量平均分子量為6000。According to Synthesis Example 1 of the example of JP-A-2008-116785, 100 parts by mass of methyltrimethoxydecane and phenyltrimethoxydecane are added to 157 parts by mass of diacetone alcohol (hereinafter referred to as DAA). 78 parts by mass, while stirring at room temperature, 61 parts by mass of a 0.3% aqueous phosphoric acid solution was added dropwise over 10 minutes. Thereafter, the mixture was stirred at 40 ° C for 30 minutes, and then heated to 105 ° C for 30 minutes, and further stirred at 105 ° C for 2 hours, thereby obtaining a comparative DAA solution of the epoxy resin (i). The DAA solution of the epoxy resin (i) had a solid content of 39% by mass, a water content of 1.8% by weight, and a mass average molecular weight of the oxime resin (i) of 6,000.

[(B)具有縮水甘油醚基之矽氧烷化合物(j)之製造][(B) Manufacture of a heptane compound (j) having a glycidyl ether group]

於甲苯300質量份中添加2,4,6,8-四甲基環四矽氧烷100質量份、烯丙基縮水甘油醚190質量份、及鉑-二乙烯基四甲基二矽氧烷錯合物(Karstedt觸媒)0.0001質量份,一面進行攪拌,一面於50~60℃下反應15小時。於60℃下自該反應液中減壓蒸餾除去溶劑,從而獲得本發明之(B)具有縮水甘油醚基之矽氧烷化合物(j)。矽氧烷化合物(j)於25℃下為黏稠之液體,環氧當量為174,於NMR分析中未見源自Si-H基之氫原子的波峰。又,藉由GPC分析而得之質量平均分子量為700,無法確認源自未反應之烯丙基縮水甘油醚的波峰。100 parts by mass of 2,4,6,8-tetramethylcyclotetraoxane, 190 parts by mass of allyl glycidyl ether, and platinum-divinyltetramethyldioxane are added to 300 parts by mass of toluene. 0.0001 part by mass of the complex compound (Karstedt catalyst) was reacted at 50 to 60 ° C for 15 hours while stirring. The solvent was distilled off under reduced pressure from the reaction mixture at 60 ° C to obtain (b) a glycidyl ether compound (j) having a glycidyl ether group of the present invention. The decane compound (j) was a viscous liquid at 25 ° C, and the epoxy equivalent was 174. No peak derived from a hydrogen atom of the Si-H group was observed in the NMR analysis. Further, the mass average molecular weight obtained by GPC analysis was 700, and the peak derived from unreacted allyl glycidyl ether could not be confirmed.

[(B)具有縮水甘油醚基之矽氧烷化合物(k)之製造][(B) Production of a heptane compound (k) having a glycidyl ether group]

於甲苯50質量份中添加1,1,3,3-四甲基二矽氧烷100質量份、烯丙基縮水甘油醚170份、及鉑-二乙烯基四甲基二矽氧烷錯合物(Karstedt觸媒)0.0005質量份,一面進行攪拌,一面於50~60℃下反應15小時。於60℃下自該反應液中減壓蒸餾除去溶劑,從而獲得本發明之(B)具有縮水甘油醚基之矽氧烷化合物(k)。矽氧烷化合物(k)之環氧當量為182,於NMR分析中未見源自Si-H基之氫原子的波峰。又,藉由GPC分析而得之質量平均分子量為360,無法確認源自未反應之烯丙基縮水甘油醚的波峰。100 parts by mass of 1,1,3,3-tetramethyldioxane, 170 parts of allyl glycidyl ether, and platinum-divinyltetramethyldioxane are added to 50 parts by mass of toluene. 0.0005 parts by mass of a substance (Karstedt catalyst) was reacted at 50 to 60 ° C for 15 hours while stirring. The solvent was distilled off under reduced pressure from the reaction mixture at 60 ° C to obtain (b) a glycidyl ether compound (k) having a glycidyl ether group of the present invention. The oxirane compound (k) had an epoxy equivalent of 182, and no peak derived from a hydrogen atom of the Si-H group was observed in the NMR analysis. Further, the mass average molecular weight obtained by GPC analysis was 360, and the peak derived from unreacted allyl glycidyl ether could not be confirmed.

[(B)具有縮水甘油醚基之矽氧烷化合物(l)之製造][(B) Manufacture of a phthalic acid compound (1) having a glycidyl ether group]

於甲苯150質量份中添加苯基三甲氧基矽烷100質量份、3-縮水甘油氧基丙基三甲氧基矽烷40質量份,一面於10℃下進行冰浴冷卻攪拌,一面以30分鐘滴加5質量%之甲酸50質量份。於使系統內溫度保持於10℃之狀態下攪拌15小時後,添加水,反覆進行水洗直至水層成為中性為止。一面於50℃、減壓下進行回流,一面除去水及藉由反應而生成之甲醇,然後於50℃、減壓下進行甲苯與PGMEA之溶劑交換,從而獲得本發明之(B)具有縮水甘油醚基之矽氧烷化合物溶液(1)之40%之PGMEA溶液。具有縮水甘油醚基之矽氧烷化合物溶液(1)於FT-IR(Fourier Transform Tnfrared,傅立葉轉換紅外線)分析中,於3100~3700cm-1 處確認到源自矽醇基之較廣之吸收,環氧當量為560,藉由GPC分析而得之質量平均分子量為4000,矽醇基含量為11.2質量%。100 parts by mass of phenyltrimethoxydecane and 40 parts by mass of 3-glycidoxypropyltrimethoxydecane were added to 150 parts by mass of toluene, and the mixture was stirred at 30 ° C for 30 minutes while being cooled in an ice bath. 5 parts by mass of formic acid 50 parts by mass. After stirring for 15 hours while maintaining the temperature in the system at 10 ° C, water was added and washed with water until the water layer became neutral. While refluxing at 50 ° C under reduced pressure, water and methanol formed by the reaction were removed, and then solvent exchange of toluene and PGMEA was carried out at 50 ° C under reduced pressure to obtain (B) glycidol of the present invention. A 40% PGMEA solution of an ether-based oxoxane compound solution (1). In the FT-IR (Fourier Transform Tnfrared) analysis, the glycidyl ether group-containing oxirane compound solution (1) was confirmed to have a broader absorption derived from a sterol group at 3100 to 3700 cm -1 . The epoxy equivalent was 560, and the mass average molecular weight obtained by GPC analysis was 4000, and the sterol group content was 11.2% by mass.

[比較之具有環氧基之矽氧烷化合物(m)之製造][Comparison of Preparation of Oxysiloxane Compound (m) Having Epoxy Group]

使用一氧化乙烯基環己烯207質量份來替代烯丙基縮水甘油醚190質量份,除此以外,進行與上述(B)具有縮水甘油醚基之矽氧烷化合物(j)相同之操作,從而獲得比較之具有環氧基之矽氧烷化合物(m)。矽氧烷化合物(m)於25℃下為黏稠之液體,環氧當量為183,於NMR分析中未見源自Si-H基之氫原子的波峰。又,藉由GPC分析而得之質量平均分子量為730,無法確認源自未反應之一氧化乙烯基環己烯的波峰。The operation similar to the above-mentioned (B) oxirane compound (j) having a glycidyl ether group is carried out, except that 207 parts by mass of propylene oxide cyclohexene is used instead of 190 parts by mass of allyl glycidyl ether. Thus, a comparative oxirane compound (m) having an epoxy group was obtained. The decane compound (m) was a viscous liquid at 25 ° C, and the epoxy equivalent was 183. No peak derived from a hydrogen atom of the Si-H group was observed in the NMR analysis. Further, the mass average molecular weight obtained by GPC analysis was 730, and it was not possible to confirm the peak derived from one of the unreacted oxyethylene cyclohexene.

比較之具有環氧基之化合物(n)Comparison of compounds with epoxy groups (n)

雙酚A之二縮水甘油醚(ADEKA公司製造,商品名:Adeka Resin EP-4100)Diglycidyl ether of bisphenol A (manufactured by ADEKA, trade name: Adeka Resin EP-4100)

比較之具有環氧基之化合物(p)Comparison of compounds with epoxy groups (p)

3,4-環氧環己烯基甲基-3',4'-環氧環己烯甲酸酯(Daicel化學工業公司製造,商品名:Celloxide 2021P)3,4-epoxycyclohexenylmethyl-3',4'-epoxycyclohexenecarboxylate (manufactured by Daicel Chemical Industry Co., Ltd., trade name: Celloxide 2021P)

(C)重氮萘醌類(DNQ)(C) Diazonaphthos (DNQ)

上述式(12)中所有之Q為以式(11)所表示之基的化合物(Daito Chemix公司製造,商品名:PA-6)All of the compounds of the above formula (12) wherein Q is a group represented by the formula (11) (manufactured by Daito Chemix Co., Ltd., trade name: PA-6)

[實施例1~11及比較例1-16]正型感光性組合物之製備[Examples 1 to 11 and Comparative Examples 1 to 16] Preparation of Positive Photosensitive Composition

以[表1]所示之比例進行調配後,利用孔徑為0.2μm之過濾器進行過濾,然後製備實施例1~11及比較例1~16之正型感光性組合物。再者,溶劑係追加成表中之值。After the preparation was carried out in the ratio shown in [Table 1], the mixture was filtered through a filter having a pore size of 0.2 μm, and then the positive photosensitive compositions of Examples 1 to 11 and Comparative Examples 1 to 16 were prepared. Further, the solvent is added to the value in the table.

對實施例1~11及比較例1~16之正型感光性組合物進行下述評價。將結果示於[表2]中。The positive photosensitive compositions of Examples 1 to 11 and Comparative Examples 1 to 16 were subjected to the following evaluations. The results are shown in [Table 2].

(試驗片之製備法)(Preparation method of test piece)

藉由旋塗法,將正型感光性組合物以厚度成為4~5μm之方式,塗佈於縱25mm、橫25mm之正方形之玻璃基板或ITO(Indium Tin Oxide,氧化銦錫)蒸鍍玻璃基板(ITO厚:100nm)上,然後使溶劑揮發,將其用於試驗片。再者,正型感光性組合物係於製備後,於23℃之恆溫槽中保存1日(24小時)後再使用。此外,為了用於保存穩定性試驗,對於在23℃之恆溫槽中保存7日及60日之正型感光性組合物,亦製備玻璃基板之試驗片。The positive photosensitive composition is applied to a square glass substrate of 25 mm in length and 25 mm in width or an ITO (Indium Tin Oxide) vapor-deposited glass substrate by a spin coating method to a thickness of 4 to 5 μm. (ITO thick: 100 nm), the solvent was then volatilized and used for the test piece. Further, the positive photosensitive composition was used after being stored in a thermostat at 23 ° C for 1 day (24 hours). Further, for the storage stability test, a test piece of a glass substrate was also prepared for a positive photosensitive composition which was stored for 7 days and 60 days in a thermostat at 23 °C.

於使用玻璃基板之試驗片之情形時,於80℃下對試驗片加熱處理2分鐘後,於玻璃基板上部設置繪有線寬5μm之光罩,藉由超高壓水銀燈以70mJ/cm2 (波長365nm曝光換算)照射紫外線。繼而,將該試驗片於液溫為23℃之2.38質量%之四甲基氫氧化銨水溶液中浸漬70秒鐘,然後進行清洗、風乾。對風乾之試驗片,藉由超高壓水銀燈以200mJ/cm2 (波長365nm曝光換算)照射紫外線,然後於大氣環境下,以230℃進行60分鐘之加熱處理,或者於氮氣環境下,以350℃進行30分鐘之加熱處理,從而形成永久抗蝕膜。In the case of using a test piece of a glass substrate, after heat-treating the test piece at 80 ° C for 2 minutes, a mask having a line width of 5 μm was placed on the upper portion of the glass substrate, and the ultrahigh pressure mercury lamp was 70 mJ/cm 2 (wavelength 365 nm). Exposure conversion) Irradiation of ultraviolet rays. Then, the test piece was immersed in an aqueous solution of 2.38 mass% of tetramethylammonium hydroxide at a liquid temperature of 23 ° C for 70 seconds, and then washed and air-dried. The air-dried test piece was irradiated with ultraviolet light by an ultrahigh pressure mercury lamp at 200 mJ/cm 2 (wavelength conversion of 365 nm), and then heated at 230 ° C for 60 minutes in an atmospheric environment, or at 350 ° C under a nitrogen atmosphere. A heat treatment was performed for 30 minutes to form a permanent resist film.

於使用ITO蒸鍍玻璃基板之試驗片之情形時,於80℃下,對試驗片加熱處理2分鐘後,不使用光罩,藉由超高壓水銀燈以200mJ/cm2 (波長365nm曝光換算)照射紫外線後,於大氣環境下以230℃進行60分鐘之加熱處理,或者於氮氣環境下以350℃進行30分鐘之加熱處理。利用蒸鍍法,於永久抗蝕膜上部形成A1之配線,從而製作介電常數測定用之試驗片。In the case of using a test piece in which an ITO vapor-deposited glass substrate was used, the test piece was heat-treated at 80 ° C for 2 minutes, and then irradiated with an ultrahigh pressure mercury lamp at 200 mJ/cm 2 (wavelength of 365 nm exposure) without using a photomask. After the ultraviolet ray, it was subjected to heat treatment at 230 ° C for 60 minutes in an atmospheric environment, or heat treatment at 350 ° C for 30 minutes in a nitrogen atmosphere. A wiring of A1 was formed on the upper portion of the permanent resist film by a vapor deposition method to prepare a test piece for measuring a dielectric constant.

(保存穩定性試驗)(storage stability test)

將於230℃下加熱處理60分鐘之玻璃基板之試驗片切斷後,使用掃描式電子顯微鏡來觀察除去鹼溶部之玻璃基板面的抗蝕劑殘渣之有無,根據下述<評價基準>來評價保存穩定性。抗蝕劑殘渣係由於正型感光性組合物之一部分高分子量化,對鹼性顯影液之溶解性或分散性降低而產生者。試驗係對在23℃下分別保存1日、7日及60日之正型感光性組合物之各試驗片進行。再者,於保存1日或7日之正型感光性組合物中,見到抗蝕劑殘渣之正型感光性組合物之試驗片未用於之後的試驗中。After the test piece of the glass substrate which was heat-treated at 230 ° C for 60 minutes was cut, the presence or absence of the resist residue on the surface of the glass substrate from which the alkali-soluble portion was removed was observed using a scanning electron microscope, and evaluated according to the following <Evaluation Criteria>. Save stability. The resist residue is produced by partially reducing the amount of the positive photosensitive composition and reducing the solubility or dispersibility of the alkaline developer. The test piece was carried out for each test piece of the positive photosensitive composition which was stored at 23 ° C for 1 day, 7 days, and 60 days, respectively. Further, in the positive photosensitive composition which was stored for 1 day or 7 days, the test piece of the positive photosensitive composition in which the resist residue was observed was not used in the subsequent test.

<評價基準><Evaluation criteria>

◎:即便為保存60日之正型感光性組合物,亦未見抗蝕劑殘渣,保存穩定性非常優異。◎: Even in the case of the positive photosensitive composition which was stored for 60 days, no resist residue was observed, and the storage stability was extremely excellent.

○:為保存7日之正型感光性組合物時,未見抗蝕劑殘渣,但為保存60日後之正型感光性組合物時,見到抗蝕劑殘渣,保存穩定性優異。○: In order to preserve the positive photosensitive composition for 7 days, no resist residue was observed. However, when the positive photosensitive composition was stored for 60 days, the resist residue was observed, and the storage stability was excellent.

△:為保存1日後之正型感光性組合物時,未見抗蝕劑殘渣,但為保存7日後之正型感光性組合物時,見到抗蝕劑殘渣,保存穩定性稍差。△: In the case of the positive photosensitive composition after one day of storage, no resist residue was observed. However, when the positive photosensitive composition was stored for 7 days, the resist residue was observed, and the storage stability was slightly inferior.

×:即便為保存1日後之正型感光性組合物,亦見到抗蝕劑殘渣,保存穩定性不良。X: Even in the case of the positive photosensitive composition after one day of storage, the resist residue was observed, and the storage stability was poor.

(解像性試驗)(resolution test)

對於上述保存穩定性試驗中切斷之試驗片,使用掃描式電子顯微鏡來觀察剖面,根據能否將5μm之線與間隙圖案形成為1比1之寬度,以下述<評價基準>來評價解像性。In the test piece cut in the storage stability test, the cross section was observed using a scanning electron microscope, and the resolution was evaluated by the following <evaluation criterion> according to whether the line of 5 μm and the gap pattern were formed to have a width of 1 to 1. Sex.

<評價基準><Evaluation criteria>

○:圖案可形成1比1之寬度,解像性優異。○: The pattern can be formed to have a width of 1 to 1, and is excellent in resolution.

×:圖案無法形成1比1之寬度,解像性差。×: The pattern cannot form a width of 1 to 1, and the resolution is poor.

(耐熱圖案化試驗)(heat-resistant patterning test)

對於上述解像性試驗中可將5μm之線與間隙圖案形成為1比1之寬度之試驗片,進而於氮氣環境下以350℃加熱30分鐘後,使用掃描式電子顯微鏡來觀察剖面,以下述<評價基準>來評價圖案化之耐熱性。In the above-described resolution test, a 5 μm line and a gap pattern were formed into a test piece having a width of 1 to 1, and further heated at 350 ° C for 30 minutes in a nitrogen atmosphere, and then the cross section was observed using a scanning electron microscope. <Evaluation Criteria> The heat resistance of the patterning was evaluated.

<評價基準><Evaluation criteria>

○:1比1之寬度之圖案化形狀得以維持,圖案化之耐熱性優異。×:由於表面粗糙,膜厚減量等,未維持1比1之寬度之圖案化形狀,圖案化之耐熱性差。○: The patterned shape of the width of 1 to 1 was maintained, and the heat resistance of the pattern was excellent. X: Since the surface was rough, the film thickness was reduced, and the like, the patterned shape having a width of 1 to 1 was not maintained, and the heat resistance of the pattern was poor.

(透明性試驗)(transparency test)

對於使用玻璃基板之各試驗片,測定波長為400nm之光之穿透率,以下述<評價基準>來評價透明性及耐熱性。再者,本試驗之透光率係指波長為400nm之光對4μm膜厚的穿透率。The transmittance of light having a wavelength of 400 nm was measured for each test piece using a glass substrate, and transparency and heat resistance were evaluated by the following <Evaluation criteria>. Furthermore, the light transmittance of this test refers to the transmittance of light having a wavelength of 400 nm to a film thickness of 4 μm.

<評價基準><Evaluation criteria>

○:於230℃下加熱處理之試驗片之透光率為96%以上,於350℃下加熱處理之試驗片之透光率為90%以上,透明性高熱歷程後之透明性優異。○: The light transmittance of the test piece heat-treated at 230 ° C was 96% or more, and the light transmittance of the test piece heat-treated at 350 ° C was 90% or more, and the transparency after the high heat history was excellent.

△:於230℃下加熱處理之試驗片之透光率為96%以上,但於350℃下加熱處理之試驗片之透光率未達90%,透明性優異,但高熱歷程後之透明性差。△: The light transmittance of the test piece heat-treated at 230 ° C was 96% or more, but the light transmittance of the test piece heat-treated at 350 ° C was less than 90%, and the transparency was excellent, but the transparency after the high heat history was poor. .

×:於230℃下加熱處理之試驗片之透光率未達96%,透明性差。X: The light transmittance of the test piece heat-treated at 230 ° C was less than 96%, and the transparency was poor.

(耐水試驗)(water resistance test)

對於使用玻璃基板之各試驗片,測定於60℃之離子交換水中浸漬24小時前後的波長為400nm之光之穿透率,且使用觸針式表面形狀測定器來測定抗蝕劑之膜厚,根據透光率之變化率與膜厚之變化率,以下述<評價基準>來評價耐水性。For each test piece using a glass substrate, the transmittance of light having a wavelength of 400 nm before and after immersion in ion-exchanged water at 60 ° C for 24 hours was measured, and the film thickness of the resist was measured using a stylus type surface shape measuring device. The water resistance was evaluated by the following <evaluation criteria> based on the rate of change of the light transmittance and the rate of change of the film thickness.

<評價基準><Evaluation criteria>

○:於350℃下加熱處理之試驗片的透光率之變化率未達1%,且膜厚之變化率未達10%,耐水性及高熱歷程後之耐水性優異。○: The rate of change of the light transmittance of the test piece which was heat-treated at 350 ° C was less than 1%, and the rate of change of the film thickness was less than 10%, and the water resistance and the water resistance after the high heat history were excellent.

△:於230℃下加熱處理之試驗片的透光率之變化率未達1%,且膜厚之變化率未達10%,但於350℃下加熱處理之試驗片的透光率之變化率為1%以上,或膜厚之變化率為10%以上,耐水性優異,但高熱歷程後之耐水性差。△: The change rate of the light transmittance of the test piece heat-treated at 230 ° C was less than 1%, and the change rate of the film thickness was less than 10%, but the change of the light transmittance of the test piece heat-treated at 350 ° C The rate is 1% or more, or the rate of change in film thickness is 10% or more, and the water resistance is excellent, but the water resistance after a high heat history is inferior.

×:於230℃下加熱處理之試驗片的透光率之變化率為1%以上,或膜厚之變化率為10%以上,耐水性差。X: The rate of change in light transmittance of the test piece heat-treated at 230 ° C was 1% or more, or the rate of change in film thickness was 10% or more, and the water resistance was poor.

(耐酸性試驗)(acid resistance test)

對於使用玻璃基板之各試驗片,測定於40℃之5質量%之鹽酸水溶液中浸漬1小時前後的波長為400nm之光之穿透率,且使用觸針式表面形狀測定器來測定抗蝕劑之膜厚,根據透光率之變化率與膜厚之變化率,以下述<評價基準>來評價耐酸性。For each test piece using a glass substrate, the transmittance of light having a wavelength of 400 nm before and after immersion in a 5 mass % aqueous hydrochloric acid solution at 40 ° C for 1 hour was measured, and the resist was measured using a stylus type surface shape measuring device. The film thickness was evaluated according to the rate of change of the light transmittance and the film thickness, and the acid resistance was evaluated by the following <Evaluation Criteria>.

<評價基準><Evaluation criteria>

○:於350℃下加熱處理之試驗片的透光率之變化率未達1%,且膜厚之變化率未達10%,耐酸性及高熱歷程後之耐酸性優異。○: The rate of change in light transmittance of the test piece heat-treated at 350 ° C was less than 1%, and the rate of change in film thickness was less than 10%, and the acid resistance after acid resistance and high heat history was excellent.

△:於230℃下加熱處理之試驗片的透光率之變化率未達1%,且膜厚之變化率未達10%,但於350℃下加熱處理之試驗片的透光率之變化率為1%以上,或膜厚之變化率為10%以上,耐酸性優異,但高熱歷程後之耐酸性差。△: The change rate of the light transmittance of the test piece heat-treated at 230 ° C was less than 1%, and the change rate of the film thickness was less than 10%, but the change of the light transmittance of the test piece heat-treated at 350 ° C The rate is 1% or more, or the rate of change in film thickness is 10% or more, and the acid resistance is excellent, but the acid resistance after the high heat history is poor.

×:於230℃下加熱處理之試驗片的透光率之變化率為1%以上,或膜厚之變化率為10%以上,耐酸性差。X: The rate of change in light transmittance of the test piece heat-treated at 230 ° C was 1% or more, or the rate of change in film thickness was 10% or more, and the acid resistance was poor.

(耐鹼性試驗)(Alkaline resistance test)

對於使用玻璃基板之各試驗片,測定於40℃之鹼溶液(單乙醇胺:N-甲基-2-吡咯啶酮:二乙二醇丁醚=10:30:60質量比)中浸漬30分鐘前後的波長為400nm之光之穿透率,且使用觸針式表面形狀測定器來測定抗蝕劑之膜厚,根據透光率之變化率與膜厚之變化率,以下述<評價基準>來評價耐鹼性。For each test piece using a glass substrate, immersing in an alkali solution (monoethanolamine: N-methyl-2-pyrrolidone: diethylene glycol butyl ether = 10:30:60 mass ratio) at 40 ° C for 30 minutes The transmittance of light having a wavelength of 400 nm before and after, and the film thickness of the resist was measured using a stylus type surface shape measuring device, and the rate of change of the light transmittance and the film thickness were determined by the following <evaluation criteria>. To evaluate alkali resistance.

<評價基準><Evaluation criteria>

○:於350℃下加熱處理之試驗片的透光率之變化率未達1%,且膜厚之變化率未達10%,耐鹼性及高熱歷程後之耐鹼性優異。○: The rate of change of the light transmittance of the test piece heat-treated at 350 ° C was less than 1%, and the rate of change of the film thickness was less than 10%, and the alkali resistance and the alkali resistance after the high heat history were excellent.

△:於230℃下加熱處理之試驗片的透光率之變化率未達1%,且膜厚之變化率未達10%,但於350℃下加熱處理之試驗片的透光率之變化率為1%以上,或膜厚之變化率為10%以上,耐鹼性優異,但高熱歷程後之耐鹼性差。△: The change rate of the light transmittance of the test piece heat-treated at 230 ° C was less than 1%, and the change rate of the film thickness was less than 10%, but the change of the light transmittance of the test piece heat-treated at 350 ° C The rate is 1% or more, or the rate of change in film thickness is 10% or more, and the alkali resistance is excellent, but the alkali resistance after a high heat history is poor.

×:於230℃下加熱處理之試驗片的透光率之變化率為1%以上,或膜厚之變化率為10%以上,耐鹼性差。X: The rate of change in light transmittance of the test piece heat-treated at 230 ° C was 1% or more, or the rate of change in film thickness was 10% or more, and the alkali resistance was poor.

(耐溶劑性試驗)(solvent resistance test)

對於使用玻璃基板之各試驗片,測定於80℃之二甲基亞碸(DMSO,dimethyl sulfoxide)中浸漬1小時前後的波長為400nm之光之穿透率,且使用觸針式表面形狀測定器來測定抗蝕劑之膜厚,根據透光率之變化率與膜厚之變化率,以下述<評價基準>來評價耐酸性。For each test piece using a glass substrate, the transmittance of light having a wavelength of 400 nm before and after immersion in dimethyl sulfoxide at 80 ° C for 1 hour was measured, and a stylus type surface shape measuring device was used. The film thickness of the resist was measured, and the acid resistance was evaluated by the following <Evaluation Criteria> based on the rate of change of the light transmittance and the rate of change of the film thickness.

<評價基準><Evaluation criteria>

○:於350℃下加熱處理之試驗片的透光率之變化率未達1%,且膜厚之變化率未達10%,耐溶劑性及高熱歷程後之耐溶劑性優異。○: The rate of change of the light transmittance of the test piece heat-treated at 350 ° C was less than 1%, and the rate of change of the film thickness was less than 10%, and the solvent resistance and the solvent resistance after the high heat history were excellent.

△:於230℃下加熱處理之試驗片的透光率之變化率未達1%,且膜厚之變化率未達10%,但於350℃下加熱處理之試驗片的透光率之變化率為1%以上,或膜厚之變化率為10%以上,耐溶劑性優異,但高熱歷程後之耐溶劑性差。△: The change rate of the light transmittance of the test piece heat-treated at 230 ° C was less than 1%, and the change rate of the film thickness was less than 10%, but the change of the light transmittance of the test piece heat-treated at 350 ° C The rate is 1% or more, or the rate of change in film thickness is 10% or more, and the solvent resistance is excellent, but the solvent resistance after a high heat history is inferior.

×:於230℃下加熱處理之試驗片的透光率之變化率為1%以上,或膜厚之變化率為10%以上,耐溶劑性差。X: The rate of change in light transmittance of the test piece heat-treated at 230 ° C was 1% or more, or the rate of change in film thickness was 10% or more, and the solvent resistance was poor.

(介電常數試驗)(dielectric constant test)

對於使用ITO蒸鍍玻璃基板之各試驗片,使用LCR測量儀(Inductance Capacitance Resistance Meter,電感電容電阻測量儀)測定介電常數,以下述<評價基準>來評價低介電常數特性。The dielectric constants of the test pieces using the ITO vapor-deposited glass substrate were measured using an LCR measuring instrument (Inductance Capacitance Resistance Meter), and the low dielectric constant characteristics were evaluated by the following <Evaluation Criteria>.

<評價基準><Evaluation criteria>

○:於230℃下加熱處理之試驗片之介電常數未達3.2,於230℃下加熱處理之試驗片與於350℃下加熱處理之試驗片之介電常數的差未達0.2,低介電常數特性及高熱歷程後之低介電常數特性優異。○: The dielectric constant of the test piece heat-treated at 230 ° C was less than 3.2, and the difference between the dielectric constant of the test piece heat-treated at 230 ° C and the test piece heat-treated at 350 ° C was less than 0.2, and the low dielectric It has excellent electrical constant characteristics and low dielectric constant characteristics after a high thermal history.

△:於230℃下加熱處理之試驗片之介電常數未達3.2,但於230℃下加熱處理之試驗片與於350℃下加熱處理之試驗片之介電常數的差為0.2以上,低介電常數特性優異,但高熱歷程後之低介電常數特性差。△: The dielectric constant of the test piece heat-treated at 230 ° C was less than 3.2, but the difference between the dielectric constant of the test piece heat-treated at 230 ° C and the test piece heat-treated at 350 ° C was 0.2 or more, low. The dielectric constant characteristics are excellent, but the low dielectric constant characteristics after a high thermal history are poor.

×:於230℃下加熱處理之試驗片之介電常數為3.2以上,低介電常數特性差。X: The test piece heat-treated at 230 ° C had a dielectric constant of 3.2 or more and a low dielectric constant characteristic.

Claims (8)

一種正型感光性組合物,其包含:作為(A)成分的於1分子中具有至少2個以下述通式(1)[化1] (式中,R1 表示可具有取代烴基之碳數1~10之伸烷基,R2 表示碳數1~4之烷基,a表示0或1~4之數,b表示1~3之數,但a+b不超過5)所表示之基的矽氧樹脂;作為(B)成分的具有縮水甘油基之矽氧烷化合物;作為(C)成分的重氮萘醌類;以及作為(D)成分的有機溶劑。A positive photosensitive composition comprising, as component (A), at least two of the following formulas (1) [Chemical Formula 1] (wherein R 1 represents an alkylene group having 1 to 10 carbon atoms which may have a substituted hydrocarbon group, R 2 represents an alkyl group having 1 to 4 carbon atoms, a represents 0 or 1 to 4, and b represents 1 to 3 a number, but a+b does not exceed 5) the base of the epoxy resin; as the component (B), a glycidyl group-containing alkoxylate compound; as the component (C), a diazonaphthoquinone; D) The organic solvent of the component. 如請求項1之正型感光性組合物,其中上述作為(A)成分之矽氧樹脂進而於1分子中具有至少1個以下述通式(2)[化2] (式中,R3 表示可具有取代烴基之碳數1~10之伸烷基,R4 表示碳數1~4之烷基,c表示0或1~4之數,d表示1~3之數,但c+d不超過5)所表示之基。The positive photosensitive composition of claim 1, wherein the above-mentioned oxygen-containing resin as the component (A) further has at least one of the following formula (2) [Chemical Formula 2] (wherein R 3 represents an alkylene group having 1 to 10 carbon atoms which may have a substituted hydrocarbon group, R 4 represents an alkyl group having 1 to 4 carbon atoms, c represents 0 or 1 to 4, and d represents 1 to 3; Number, but c+d does not exceed 5). 如請求項1之正型感光性組合物,其中上述作為(A)成分之矽氧樹脂進而含有矽醇基。The positive photosensitive composition of claim 1, wherein the oxime resin as the component (A) further contains a decyl group. 如請求項1之正型感光性組合物,其中上述作為(A)成分之矽氧樹脂係使以下述通式(3)[化3] (式中,R1 、R3 及R8 可相同亦可不同,表示可具有取代烴基之碳數1~10之伸烷基,R2 及R4 表示可相同亦可不同之碳數1~4之烷基,R5 、R6 及R7 表示可相同亦可不同之碳數1~10之烷基或苯基;a表示0或1~4之數,b表示1~3之數,但a+b不超過5;c表示0或1~4之數,d表示1~3之數,但c+d不超過5;R9 表示可相同亦可不同之碳數1~6之烷基或環烷基,R10 表示碳數1~3之烷基,e表示1~3之數;m、n及p表示m:n:p=1:0~2:0.5~3且m+n+p=3~6之數)所表示之環狀矽氧烷化合物、與以下述通式(4)[化4] (式中,R11 表示可相同亦可不同之碳數1~6之烷基或環烷基,R12 表示碳數1~3之烷基,R13 表示可相同亦可不同之碳數1~4之烷基,f表示2~3之數,g表示0或1~5之數)所表示之芳基烷氧基矽烷化合物進行反應所得者。The positive photosensitive composition of claim 1, wherein the above-mentioned oxime resin as the component (A) is represented by the following formula (3) [Chemical 3] (wherein R 1 , R 3 and R 8 may be the same or different and each represents an alkylene group having 1 to 10 carbon atoms which may have a substituted hydrocarbon group, and R 2 and R 4 represent a carbon number which may be the same or different. An alkyl group of 4, R 5 , R 6 and R 7 represent an alkyl group or a phenyl group having 1 to 10 carbon atoms which may be the same or different; a represents a number of 0 or 1 to 4, and b represents a number of 1 to 3, However, a + b does not exceed 5; c represents a number of 0 or 1 to 4, d represents a number of 1 to 3, c + d but does not exceed 5; R 9 represents identical or different alkyl having 1 to 6 carbon atoms the Or a cycloalkyl group, R 10 represents an alkyl group having 1 to 3 carbon atoms, and e represents a number of 1 to 3; m, n and p represent m: n: p = 1: 0 to 2: 0.5 to 3 and m + a cyclic oxirane compound represented by n+p=3~6) and the following general formula (4) [Chemical 4] (wherein R 11 represents an alkyl group or a cycloalkyl group having 1 to 6 carbon atoms which may be the same or different, R 12 represents an alkyl group having 1 to 3 carbon atoms, and R 13 represents a carbon number which may be the same or different. The alkyl group of ~4, f represents the number of 2 to 3, and g represents the number of aryl alkoxy decane compounds represented by 0 or 1 to 5). 一種永久抗蝕劑,其特徵在於,其係由如請求項1之正型感光性組合物所得。A permanent resist obtained by the positive photosensitive composition of claim 1. 一種永久抗蝕劑之製造方法,其特徵在於,將如請求項1之正型感光性組合物塗佈於基材上,使塗佈物曝光,進行鹼性顯影後,於120~350℃之溫度下進行後烘烤。A method for producing a permanent resist, comprising applying a positive photosensitive composition according to claim 1 to a substrate, exposing the coated article, and performing alkaline development at 120 to 350 ° C Post-baking at temperature. 一種液晶顯示裝置,其包含將使用如請求項1之正型感光性組合物所得之永久抗蝕劑作為絕緣層或平坦化膜的主動矩陣基板。A liquid crystal display device comprising an active matrix substrate using a permanent resist obtained by using the positive photosensitive composition of claim 1 as an insulating layer or a planarizing film. 一種有機EL顯示裝置,其包含將使用如請求項1之正型感光性組合物所得之永久抗蝕劑作為絕緣層或平坦化膜的主動矩陣基板。An organic EL display device comprising an active matrix substrate using a permanent resist obtained by using the positive photosensitive composition of claim 1 as an insulating layer or a planarizing film.
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