TW201829683A - Adhesive film, die dicing bond film, method for manufacturing semiconductor device, and semiconductor device in which voids disappear and an excessive protrusion of the adhesive film is suppressed - Google Patents

Adhesive film, die dicing bond film, method for manufacturing semiconductor device, and semiconductor device in which voids disappear and an excessive protrusion of the adhesive film is suppressed Download PDF

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Publication number
TW201829683A
TW201829683A TW106139430A TW106139430A TW201829683A TW 201829683 A TW201829683 A TW 201829683A TW 106139430 A TW106139430 A TW 106139430A TW 106139430 A TW106139430 A TW 106139430A TW 201829683 A TW201829683 A TW 201829683A
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Taiwan
Prior art keywords
film
semiconductor element
adhesive film
adhesive
semiconductor
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TW106139430A
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Chinese (zh)
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TWI745485B (en
Inventor
宍戶雄一郎
高本尚英
大西謙司
木村雄大
福井章洋
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日商日東電工股份有限公司
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Publication of TW201829683A publication Critical patent/TW201829683A/en
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Publication of TWI745485B publication Critical patent/TWI745485B/en

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074—Stacked arrangements of non-apertured devices
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • C09J4/06—Organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond in combination with a macromolecular compound other than an unsaturated polymer of groups C09J159/00 - C09J187/00
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • H—ELECTRICITY
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49883—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00—Polymer mixtures characterised by other features
    • C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2433/00—Presence of (meth)acrylic polymer
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    • C09J2461/00—Presence of condensation polymers of aldehydes or ketones
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    • C09J2463/00—Presence of epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The present invention provides an adhesive film capable of manufacturing a high-quality semiconductor device in which voids disappear and an excessive protrusion of the adhesive film is suppressed, and a use thereof. The adhesive film of the present invention is used for embedding a first semiconductor element fixed on a to-be-bonded object and fixing a second semiconductor element different from the first semiconductor element on a to-be-bonded object. The adhesive film of the present invention comprises a thermoplastic resin, a thermally curable resin and an inorganic filler, wherein the content of the inorganic filler is 35% by weight or more and 50% by weight or less based on the total content of solid components, the content of the thermoplastic resin is 10% by weight or more and 25% by weight or less based on the total content of solid components, and the viscosity at 120 DEG C before being thermally cured is 1300 Pa·s or more and 4,500 Pa·s or less.

Description

接著膜、切晶黏晶膜、半導體裝置之製造方法及半導體裝置Film, dicing die, film manufacturing method, and semiconductor device

本發明係關於一種接著膜、切晶黏晶膜、半導體裝置之製造方法及半導體裝置。The present invention relates to an adhesive film, a crystal cut crystal film, a method of manufacturing a semiconductor device, and a semiconductor device.

業界正更進一步地要求半導體裝置及其封裝之高功能化、薄型化、小型化。作為其一對策，開發出將半導體元件於其厚度方向上積層複數層而實現半導體元件之高密度積體化之三維安裝技術。 作為通常之三維安裝方法，採用如下程序：於基板等被接著體上固定半導體元件，在其最下層之半導體元件上依序積層半導體元件。於半導體元件間、及半導體元件與被接著體之間主要藉由接合線(以下亦稱為「導線」。)實現電性連接。另外，半導體元件之固定中廣泛使用膜狀之接著劑。 於此種半導體裝置中，為了實現控制複數個半導體元件各自之作動或控制半導體元件間之通信等，於最上層半導體元件之上配置控制用半導體元件(以下亦稱為「控制器」)(參照專利文獻1)。 與下層之半導體元件同樣地，控制器亦藉由導線來實現與被接著體之電性連接。然而，隨著半導體元件之積層層數增多，控制器與被接著體之距離變長，電性連接所需要之導線亦變長。其結果，存在產生半導體封裝之通信速度降低或因外部因素(熱、衝擊等)造成之導線之不良情況，使半導體封裝之品質降低，或者導線接合步驟變複雜，使半導體裝置製造之良率降低。 針對此種情況，提出有一種包埋用接著膜，其能夠將固定於被接著體之控制器包埋並且將其他半導體元件固定(參照專利文獻2)。藉由使用包埋用接著膜，控制器變為位於最下層，因此能夠消除上述不良情況。藉由使用包埋用接著膜作為兼具切晶功能及晶片固定功能之切晶黏晶膜之接著膜，能夠提高半導體裝置之製造效率及實現半導體裝置之高品質化。另外，不限於導線連接之控制器，亦可應用於覆晶連接之控制器，能夠實現用途之進一步拓展。 [先前技術文獻] [專利文獻] [專利文獻]日本專利特開2007-096071號公報 [專利文獻]日本專利特開2014-133823號公報The industry is increasingly demanding high functionality, thinness, and miniaturization of semiconductor devices and their packages. As a countermeasure against this, a three-dimensional mounting technique has been developed in which a plurality of layers are stacked in a thickness direction of a semiconductor element to realize high-density integration of semiconductor elements. As a general three-dimensional mounting method, a semiconductor element is fixed on a substrate such as a substrate, and a semiconductor element is sequentially laminated on the lowermost semiconductor element. Electrical connection is mainly made between the semiconductor elements and between the semiconductor element and the object to be bonded by a bonding wire (hereinafter also referred to as a "wire"). Further, a film-like adhesive is widely used for fixing semiconductor elements. In such a semiconductor device, a control semiconductor element (hereinafter also referred to as a "controller") is disposed on the uppermost semiconductor element in order to control the operation of each of the plurality of semiconductor elements or to control communication between the semiconductor elements. Patent Document 1). Similarly to the semiconductor element of the lower layer, the controller also electrically connects to the object to be bonded by means of a wire. However, as the number of layers of the semiconductor element increases, the distance between the controller and the object to be bonded becomes longer, and the wire required for electrical connection becomes longer. As a result, there is a problem that the communication speed of the semiconductor package is lowered or the wire is defective due to external factors (heat, impact, etc.), the quality of the semiconductor package is lowered, or the wire bonding step is complicated, and the yield of the semiconductor device is lowered. . In view of such a situation, there is proposed an adhesive film for embedding which can be embedded in a controller to be attached to a member and to fix other semiconductor elements (see Patent Document 2). By using the adhesive film for embedding, the controller becomes at the lowermost level, so that the above-described problems can be eliminated. By using the adhesive underlayer film as a bonding film of a dicing die-bonding film having a dicing function and a wafer fixing function, the manufacturing efficiency of the semiconductor device can be improved and the quality of the semiconductor device can be improved. In addition, it is not limited to the controller for wire connection, and can also be applied to a controller for flip chip connection, which can further expand the use. [Prior Art Document] [Patent Document] [Patent Document] Japanese Patent Laid-Open No. Hei. No. 2007-096071

[發明所欲解決之問題] 包含控制器之被接著體表面之結構物隨著器件整體之高功能化或微小化而不斷複雜化。將包埋用接著膜貼合於表面變複雜化之被接著體時，接著膜與被接著體之界面處之密接性變得不充分而會產生空隙，視情況有引起半導體裝置之可靠性降低之虞。因此，為了使空隙消失，嘗試於加壓條件下進行包埋用接著膜之熱硬化。為了使空隙消失，較佳為接著膜之流動性或黏性較低。然而，該接著膜之厚度基於與包埋被接著體上之半導體元件及周邊結構之用途之關係，而與先前之接著膜相比變厚，因此於接著膜與被接著體貼合時，變得容易自最初之貼合區域伸出。該傾向於接著膜之流動性降低時變得更顯著。當發生接著膜之過度伸出時，有發生半導體元件周圍之污染、引起半導體裝置之製造良率降低之虞。若為了抑制此種過度伸出而提高接著膜之流動性或黏性，則反之空隙消失變得不充分。為了良率良好地製造高品質之半導體裝置，必需兼顧空隙之消失及接著膜之伸出抑制此相悖之要求。 本發明係鑒於上述問題而完成，其目的在於提供一種可良率良好地製造空隙消失且接著膜之過度伸出得到抑制之高品質之半導體裝置的接著膜及其用途。 [解決問題之技術手段] 本案發明者等人為了解決上述先前之問題而進行了銳意研究。結果發現，藉由設為下述構成，能夠達成上述目的，從而完成了本發明。 即，本發明係關於一種接著膜，其係用於將固定於被接著體上之第1半導體元件包埋、且將與該第1半導體元件不同之第2半導體元件固定於被接著體者，且 含有熱塑性樹脂、熱硬化性樹脂及無機填充劑， 於上述熱塑性樹脂、上述熱硬化性樹脂及上述無機填充劑之合計重量中，上述無機填充劑之含量為30重量%以上且50重量%以下，且上述熱塑性樹脂之含量為10重量%以上且25重量%以下， 熱硬化前之於120℃下之黏度為1300 Pa・s以上且4500 Pa・s以下。 該接著膜中至少含有熱塑性樹脂、熱硬化性樹脂及無機填充劑之3種成分，且將無機填充劑之含量、熱塑性樹脂之含量及熱硬化前之於120℃下之黏度分別設為特定範圍。藉由此種具有特定構成之接著膜，能夠嵌埋第1半導體元件，於接著膜之加壓下之熱硬化(以下亦稱為「加壓硬化」)時，能夠使接著膜與被接著體之界面處之空隙充分消失，並且可防止接著膜自最初之貼合區域之過度伸出。若無機填充劑之含量、熱塑性樹脂之含量及熱硬化前之於120℃下之黏度中之任一者低於下限值，則會引起接著膜之過度伸出，反之，若超過上限值，則無法嵌埋第1半導體元件或空隙之消失變得不充分。 上述接著膜之熱硬化前之於150℃下之黏度較佳為500 Pa・s以上且2500 Pa・s以下。藉此，可更有效地使接著膜於加壓硬化時之空隙消失。 上述熱硬化性樹脂之軟化點較佳為80℃以下。藉此，加壓硬化時之接著膜之流動性提高，可以更高之水準使空隙消失。 又，本發明係關於一種切晶黏晶膜，其具備： 切晶膜，其具有基材及形成於該基材上之黏著劑層；及 接著膜，其積層於上述黏著劑層上。 本發明之切晶黏晶膜由於具備該接著膜，故而可良率良好地製造高品質之半導體裝置。 進而，本發明係關於一種半導體裝置之製造方法，其包括如下步驟： 被接著體準備步驟，其準備固定有第1半導體元件之被接著體； 貼合步驟，其上述切晶黏晶膜之接著膜與半導體晶圓貼合； 切晶步驟，其將上述半導體晶圓與上述接著膜一起切割而形成第2半導體元件； 拾取步驟，其將上述第2半導體元件與上述接著膜一起拾取； 固定步驟，其利用與上述第2半導體元件一起拾取之接著膜將固定於上述被接著體之上述第1半導體元件包埋，並且將上述第2半導體元件固定於該被接著體；及 加壓硬化步驟，其於上述固定步驟後在加壓下對上述接著膜進行加熱而使其熱硬化。 於本發明之製造方法中，使用具備特定之接著膜之該切晶黏晶膜，並經由加壓硬化步驟製造半導體裝置，因此可良率良好地製造接著膜之伸出得到抑制並且空隙充分消失之高品質之半導體裝置。[Problems to be Solved by the Invention] The structure including the surface of the adherend of the controller is complicated by the high functionality or miniaturization of the entire device. When the adhesive film for the embedding is bonded to the adherend having a complicated surface, the adhesiveness at the interface between the film and the adherend becomes insufficient, and voids are generated, which may cause deterioration of reliability of the semiconductor device as the case may be. After that. Therefore, in order to make the void disappear, it is attempted to perform thermal hardening of the film for embedding under pressure. In order to eliminate voids, it is preferred that the fluidity or viscosity of the film is low. However, the thickness of the adhesive film becomes thicker than that of the previous adhesive film based on the relationship with the use of the semiconductor element and the peripheral structure on the embedded body, so that when the adhesive film is bonded to the adherend, it becomes It is easy to extend from the initial fit area. This tends to become more pronounced as the fluidity of the film decreases. When the overhanging of the adhesive film occurs, contamination around the semiconductor element occurs, causing a decrease in the manufacturing yield of the semiconductor device. If the fluidity or viscosity of the adhesive film is increased in order to suppress such excessive protrusion, the void disappears. In order to manufacture a high-quality semiconductor device with good yield, it is necessary to take into consideration the disappearance of voids and the subsequent extension of the film to suppress such a requirement. The present invention has been made in view of the above problems, and it is an object of the invention to provide an adhesive film of a semiconductor device which can produce a high-quality semiconductor device which can be easily produced with a good yield and which is prevented from being excessively stretched. [Technical means for solving the problem] The inventors of the present invention conducted intensive studies in order to solve the above-mentioned problems. As a result, it has been found that the above object can be attained by the following constitution, and the present invention has been completed. In other words, the present invention relates to an adhesive film for embedding a first semiconductor element fixed on a substrate and fixing a second semiconductor element different from the first semiconductor element to a member to be bonded. Further, the thermoplastic resin, the thermosetting resin, and the inorganic filler are contained in the total weight of the thermoplastic resin, the thermosetting resin, and the inorganic filler, and the content of the inorganic filler is 30% by weight or more and 50% by weight or less. The content of the thermoplastic resin is 10% by weight or more and 25% by weight or less, and the viscosity at 120 ° C before the heat curing is 1300 Pa·s or more and 4,500 Pa·s or less. The adhesive film contains at least three components of a thermoplastic resin, a thermosetting resin, and an inorganic filler, and the content of the inorganic filler, the content of the thermoplastic resin, and the viscosity at 120 ° C before thermosetting are each set to a specific range. . By the above-described adhesive film having a specific structure, the first semiconductor element can be embedded, and when the film is thermally cured under pressure (hereinafter also referred to as "pressure hardening"), the adhesive film and the adherend can be formed. The void at the interface is sufficiently lost and the overhanging of the film from the initial conforming area can be prevented. If any of the content of the inorganic filler, the content of the thermoplastic resin, and the viscosity at 120 ° C before the thermal curing is lower than the lower limit, excessive protrusion of the adhesive film may be caused, and if the upper limit is exceeded However, the first semiconductor element cannot be embedded or the disappearance of the void is insufficient. The viscosity at 150 ° C before the thermal curing of the adhesive film is preferably 500 Pa·s or more and 2500 Pa·s or less. Thereby, the void of the adhesive film at the time of press hardening can be more effectively eliminated. The softening point of the above thermosetting resin is preferably 80 ° C or lower. Thereby, the fluidity of the adhesive film at the time of press hardening is improved, and the void can be eliminated at a higher level. Further, the present invention relates to a dicing die-bonding film comprising: a dicing film having a substrate and an adhesive layer formed on the substrate; and a film which is laminated on the adhesive layer. Since the dicing crystal film of the present invention includes the adhesive film, a high-quality semiconductor device can be manufactured with good yield. Furthermore, the present invention relates to a method of fabricating a semiconductor device comprising the steps of: preparing a substrate to be prepared, wherein a substrate to be bonded with a first semiconductor element is mounted; and a bonding step of: subsequently: dicing the die-cut film a film is bonded to the semiconductor wafer; a dicing step of cutting the semiconductor wafer together with the bonding film to form a second semiconductor element; and a picking step of picking up the second semiconductor element together with the bonding film; And affixing the first semiconductor element fixed to the adherend by the adhesive film picked up together with the second semiconductor element, and fixing the second semiconductor element to the adherend; and a press hardening step; After the fixing step, the adhesive film is heated and hardened under pressure. In the production method of the present invention, by using the dicing die-bonding film having a specific adhesive film and manufacturing the semiconductor device via the press hardening step, the adhesion of the adhesive film can be suppressed and the voids are sufficiently eliminated. High quality semiconductor devices.

[第1實施形態] 對於作為本發明之一實施形態之第1實施形態，以下一面參照圖一面進行說明。其中，於一部分或全部圖中，省略了說明中無需之部分，另外為了容易說明，存在進行放大或縮小等而圖示之部分。於第1實施形態中，以下以如圖1所示般在基材4上積層黏著劑層3而成之切晶膜5上積層有接著膜22之切晶黏晶膜之態樣為例進行說明。於本實施形態中，對藉由導線接合連接而實現被接著體與第1半導體元件之電性連接之態樣進行說明。 ＜接著膜＞ 接著膜22係具有接著功能之層狀物，作為其構成材料，可列舉含有熱塑性樹脂、熱硬化性樹脂及無機填充劑者。 (熱塑性樹脂) 於熱塑性樹脂、熱硬化性樹脂及無機填充劑之合計重量中，熱塑性樹脂之含量為10重量%以上，較佳為11重量%以上，更佳為12重量%以上。另一方面，上述含量為25重量%以下，較佳為22重量%以下，更佳為20重量%以下。藉由將熱塑性樹脂之含量設為上述範圍，能夠兼顧空隙消失性及伸出防止性。若上述含量過少，則伸出防止性降低，若過多，則空隙消失性降低。 作為上述熱塑性樹脂，可列舉：天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6-尼龍或6,6-尼龍等聚醯胺樹脂、苯氧基樹脂、丙烯酸系樹脂、PET(Polyethylene Terephthalate，聚對苯二甲酸乙二酯)或PBT(Polybutylene Terephthalate，聚對苯二甲酸丁二酯)等飽和聚酯樹脂、聚醯胺醯亞胺樹脂或氟樹脂等。該等熱塑性樹脂可單獨使用，或者併用2種以上。於該等熱塑性樹脂之中，尤佳為離子性雜質較少、耐熱性高且可確保半導體元件之可靠性之丙烯酸系樹脂。 作為上述丙烯酸系樹脂，並無特別限定，可列舉將具有碳數30以下、尤其是碳數4～18之直鏈或支鏈之烷基的丙烯酸或甲基丙烯酸之酯中之1種或2種以上作為成分之聚合物等。作為上述烷基，例如可列舉：甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基、或二十烷基等。 又，作為形成上述聚合物之其他單體，並無特別限定，例如可列舉：丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、伊康酸、馬來酸、富馬酸或丁烯酸等之類的含羧基單體；馬來酸酐或伊康酸酐等之類的酸酐單體；(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯或丙烯酸(4-羥基甲基環己基)甲酯等之類的含羥基單體；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯或(甲基)丙烯醯氧基萘磺酸等之類的含磺酸基單體；或者2-羥基乙基丙烯醯基磷酸酯等之類的含磷酸基單體。 (熱硬化性樹脂) 作為上述熱硬化性樹脂，可列舉：酚樹脂、胺基樹脂、不飽和聚酯樹脂、環氧樹脂、聚胺酯樹脂、矽酮樹脂或熱硬化性聚醯亞胺樹脂等。該等樹脂可單獨使用或者併用2種以上而使用。尤佳為會腐蝕半導體元件之離子性雜質等之含量較少之環氧樹脂。又，作為環氧樹脂之硬化劑，較佳為酚樹脂。 上述環氧樹脂只要為通常用作接著劑組合物者則並無特別限定，例如可使用雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、茀型、苯酚酚醛清漆型、鄰甲酚酚醛清漆型、三羥基苯基甲烷型、四酚基乙烷型等二官能環氧樹脂或多官能環氧樹脂；或者乙內醯脲型、異氰尿酸三縮水甘油酯型或縮水甘油胺型等環氧樹脂。該等可單獨使用或併用2種以上使用。該等環氧樹脂中，尤佳為酚醛清漆型環氧樹脂、聯苯型環氧樹脂、三羥基苯基甲烷型樹脂或四酚基乙烷型環氧樹脂。其原因在於，該等環氧樹脂富有與作為硬化劑之酚醛樹脂之反應性，且耐熱性等優異。 進而，上述酚醛樹脂係作為上述環氧樹脂之硬化劑起作用之物質，例如可列舉：苯酚酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、第三丁基苯酚酚醛清漆樹脂、壬基苯酚酚醛清漆樹脂等酚醛清漆型酚樹脂；可溶酚醛型酚樹脂、聚對羥基苯乙烯等聚氧苯乙烯等。該等可單獨使用，或者併用2種以上而使用。該等酚醛樹脂中，尤佳為苯酚酚醛清漆樹脂、苯酚芳烷基樹脂。其原因在於可使半導體裝置之連接可靠性提高。 熱硬化性樹脂之軟化點並無特別限定，較佳為80℃以下，更佳為75℃以下，進而較佳為70℃以下。藉由將熱硬化性樹脂之軟化點設為上述範圍，加壓硬化時之接著膜之流動性提高，可以更高之水準使空隙消失。熱硬化樹脂之軟化點之下限值並無特別限定，只要為常溫(25℃)下成為液狀之軟化點(例如10℃以上，較佳為15℃以上)即可。再者，於接著膜含有複數種熱硬化性樹脂之情形時，較佳為各熱硬化性樹脂之軟化點中之最高之軟化點成為上述範圍。 作為軟化點為80℃以下之熱硬化性樹脂，可適宜地使用市售品。作為軟化點為80℃以下之環氧樹脂之具體例，可列舉：YL-980(三菱化學公司製造，常溫下為液狀)、828(三菱化學公司製造，常溫下為液狀)、1001(三菱化學公司製造，64℃)、1002(三菱化學公司製造，78℃)、YX7700(三菱化學公司製造，65℃)、EPICLON 1050(DIC股份有限公司製造，62-73℃)、EPICLON N-660(DIC股份有限公司製造，61-69℃)、EPICLON N-665(DIC股份有限公司製造，64-72℃)、EPICLON N-670(DIC股份有限公司製造，68-76℃)、EPICLON N-770(DIC股份有限公司製造，65-75℃)、EPICLON HP-7200L(DIC股份有限公司製造，50-60℃)、EPICLON HP-7200(DIC股份有限公司製造，57-68℃)、EPICLON HP-4770(DIC股份有限公司製造，67-77℃)等(括號內之數值為軟化點(目錄值))，但並無特別限定。 作為軟化點為80℃以下之酚醛樹脂之具體例，可列舉：H-4(明和化成股份有限公司製造，67-75℃)、MEH-7800 4L(明和化成股份有限公司製造，60-63℃)、MEH-7800 SS(明和化成股份有限公司製造，64-69℃)、MEH-7800 3L(明和化成股份有限公司製造，70-73℃)、MEH-7800 S(明和化成股份有限公司製造，74-78℃)、MEH-7851 SS(明和化成股份有限公司製造，64-69℃)、MEH-7851 S(明和化成股份有限公司製造，70-74℃)、MEH-7851 M(明和化成股份有限公司製造，75-79℃)、MEH-8000-4L(明和化成股份有限公司製造，常溫下為液狀)、MEH-8000H(明和化成股份有限公司製造，常溫下為液狀)、MEH-8005(明和化成股份有限公司製造，常溫下為液狀)、GPNX 70(群榮化學工業，68-72℃)、PS 4271(群榮化學工業，69-73℃)等(括號內之數值為軟化點(目錄值))，但並無特別限定。 於包含環氧樹脂及酚樹脂作為熱硬化性樹脂之情形時，關於上述環氧樹脂與酚樹脂之調配比率，例如適宜為以酚樹脂中之羥基相對於上述環氧樹脂成分中之環氧基1當量為0.5～2.0當量之方式進行調配。更適宜為0.8～1.2當量。即，其原因在於，若兩者之調配比率偏離上述範圍，則不會進行充分之硬化反應，環氧樹脂硬化物之特性容易劣化。 再者，於本實施形態中，尤佳為含有環氧樹脂及酚樹脂作為熱硬化性樹脂、以及含有丙烯酸系樹脂作為熱塑性樹脂之接著膜。該等樹脂由於離子性雜質較少、耐熱性較高，因此可確保半導體元件之可靠性。此時之調配比為相對於丙烯酸系樹脂成分100重量份，環氧樹脂與酚樹脂之混合量為10～700重量份。 (交聯劑) 關於本實施形態之接著膜，為了預先使其進行某程度之交聯，製作時可預先添加與聚合物之分子鏈末端之官能基等反應之多官能性化合物作為交聯劑。藉此，可提高高溫下之接著特性，實現耐熱性之改善。 作為上述交聯劑，可採用先前公知之交聯劑。尤其更佳為甲苯二異氰酸酯、二苯基甲烷二異氰酸酯、對苯二異氰酸酯、1,5-萘二異氰酸酯、多元醇與二異氰酸酯之加成物等多異氰酸酯化合物。作為交聯劑之添加量，相對於上述聚合物100重量份，通常較佳為0.05～7重量份。若交聯劑之量多於7重量份，則接著力會降低，故而欠佳。另一方面，若少於0.05重量份，則凝集力不足，故而欠佳。又，亦可一併含有此種多異氰酸酯化合物以及視需要之環氧樹脂等其他多官能性化合物。 (無機填充劑) 上述無機填充劑之含量於熱塑性樹脂、熱硬化性樹脂及無機填充劑之合計重量中為30重量%以上且50重量%以下。上述含量之下限值較佳為31重量%，更佳為32重量%，進而較佳為33重量%，進而更佳為34重量%，尤佳為35重量%。上述含量之上限值較佳為49重量%，更佳為48重量%，進而較佳為47重量%，進而更佳為46重量%，尤佳為45重量%。藉由將無機填充劑之含量設為上述範圍，可兼顧空隙消失性及伸出防止性。若上述含量過少，則伸出防止性降低，若過多，則空隙消失性降低。 無機填充劑之調配能夠控制接著膜之流動性或黏性、賦予導電性、提高導熱性、調節彈性模數等。作為上述無機填充劑，例如可列舉包含二氧化矽、黏土、石膏、碳酸鈣、硫酸鋇、氧化鋁、氧化鈹、碳化矽、氮化矽等陶瓷類、鋁、銅、銀、金、鎳、鉻、錫、鋅、鈀、焊料等金屬或合金類、以及碳等之各種無機粉末。該等可單獨使用或併用2種以上而使用。其中，可適宜地使用二氧化矽、尤其是熔融二氧化矽。又，藉由添加包含鋁、銅、銀、金、鎳、鉻、錫、鋅等形成之導電性微粒子製成導電性接著膜，可抑制靜電之產生。再者，無機填充劑之平均粒徑較佳為0.1～80 μm之範圍內。 (熱硬化觸媒) 作為接著膜之構成材料，亦可使用熱硬化觸媒。作為其含量，相對於熱塑性樹脂、熱硬化性樹脂及無機填充劑之合計重量100重量份，較佳為0.01～1重量份，更佳為0.05～0.5重量份。藉由將含量設為上述下限以上，可使黏晶時未反應之環氧基彼此於後續步驟中聚合，使該未反應之環氧基減少或消失。其結果，能夠製造使半導體元件接著固定於被接著體上且無剝離之半導體裝置。另一方面，藉由將調配比率設為上述上限以下，可防止產生硬化阻礙。 作為上述熱硬化觸媒，並無特別限定，例如可列舉：咪唑系化合物、三苯基膦系化合物、胺系化合物、三苯基硼烷系化合物、三鹵代硼烷系化合物等。該等可單獨使用或併用2種以上而使用。 作為上述咪唑系化合物，可列舉：2-甲基咪唑(商品名：2MZ)、2-十一烷基咪唑(商品名：C11Z)、2-十七烷基咪唑(商品名：C17Z)、1,2-二甲基咪唑(商品名：1.2DMZ)、2-乙基-4-甲基咪唑(商品名：2E4MZ)、2-苯基咪唑(商品名：2PZ)、2-苯基-4-甲基咪唑(商品名：2P4MZ)、1-苄基-2-甲基咪唑(商品名：1B2MZ)、1-苄基-2-苯基咪唑(商品名：1B2PZ)、1-氰基乙基-2-甲基咪唑(商品名：2MZ-CN)、1-氰基乙基-2-十一烷基咪唑(商品名：C11Z-CN)、1-氰基乙基-2-苯基咪唑鎓偏苯三酸鹽(商品名：2PZCNS-PW)、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基均三𠯤(商品名：2MZ-A)、2,4-二胺基-6-[2'-十一烷基咪唑基-(1')]-乙基均三𠯤(商品名：C11Z-A)、2,4-二胺基-6-[2'-乙基-4'-甲基咪唑基-(1')]-乙基均三𠯤(商品名：2E4MZ-A)、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基均三𠯤異氰尿酸加成物(商品名：2MA-OK)、2-苯基-4,5-二羥基甲基咪唑(商品名：2PHZ-PW)、2-苯基-4-甲基-5-羥基甲基咪唑(商品名：2P4MHZ-PW)等(均為四國化成股份有限公司製造)。 作為上述三苯基膦系化合物，並無特別限定，例如可列舉：三苯基膦、三丁基膦、三(對甲基苯基)膦、三(壬基苯基)膦、二苯基甲苯基膦等三有機膦、四苯基溴化鏻(商品名：TPP-PB)、甲基三苯基鏻(商品名：TPP-MB)、甲基三苯基氯化鏻(商品名：TPP-MC)、甲氧基甲基三苯基鏻(商品名：TPP-MOC)、氯化苄基三苯基鏻(商品名：TPP-ZC)等(均為北興化學股份有限公司製造)。又，作為上述三苯基膦系化合物，較佳為實質上對環氧樹脂顯示非溶解性者。若對環氧樹脂為非溶解性，則可抑制熱硬化過度地進行。作為具有三苯基膦結構且實質上對環氧樹脂顯示非溶解性之熱硬化觸媒，例如可例示甲基三苯基鏻(商品名：TPP-MB)等。再者，上述「非溶解性」係指包含三苯基膦系化合物之熱硬化觸媒對包含環氧樹脂之溶劑為不溶性，更詳細而言，係指於溫度10～40℃之範圍內不溶解10重量%以上。 作為上述三苯基硼烷系化合物，並無特別限定，例如可列舉三(對甲基苯基)硼烷等。又，作為三苯基硼烷系化合物，可包含進而具有三苯基膦結構之化合物。作為該具有三苯基膦結構及三苯基硼烷結構之化合物，並無特別限定，例如可列舉：四苯基硼四苯基鏻(商品名：TPP-K)、四(對甲苯基硼)四苯基鏻(商品名：TPP-MK)、四苯基硼苄基三苯基鏻(商品名：TPP-ZK)、三苯基膦三苯基硼烷(商品名：TPP-S)等(均為北興化學股份有限公司製造)。 作為上述胺基系化合物，並無特別限定，例如可列舉：單乙醇胺三氟硼酸鹽(Stella Chemifa(股)製造)、雙氰胺(Nacalai Tesque(股)製造)等。 作為上述三鹵代硼烷系化合物，並無特別限定，例如可列舉三氯硼烷等。 (其他添加劑) 再者，於本實施形態之接著膜中，除上述無機填充劑以外，還可以視需要適當地調配其他添加劑。作為其他添加劑，例如可列舉阻燃劑、矽烷偶合劑或離子捕捉劑等。 作為上述阻燃劑，例如可列舉：三氧化二銻、五氧化二銻、溴化環氧樹脂等。該等可單獨使用或併用2種以上而使用。 作為上述矽烷偶合劑，例如可列舉：β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基甲基二乙氧基矽烷等。該等化合物可單獨使用或併用2種以上而使用。 作為上述離子捕捉劑，例如可列舉鋁碳酸鎂類、氫氧化鉍等。該等可單獨使用或併用2種以上。 上述接著膜之熱硬化前之於120℃下之黏度為1300 Pa・s以上且4500 Pa・s以下。上述黏度之下限較佳為1350 Pa・s，更佳為1400 Pa・s，進而較佳為1450 Pa・s，尤佳為1500 Pa・s。另一方面，上述黏度之上限較佳為4400 Pa・s，更佳為4300 Pa・s，進而較佳為4200 Pa・s，尤佳為4000 Pa・s。藉由將接著膜之熱硬化前之於120℃下之黏度設為上述範圍，能夠兼顧空隙消失性及伸出防止性。若上述黏度過低，則伸出防止性降低，若過高，則空隙消失性降低。 上述接著膜之熱硬化前之於150℃下之黏度較佳為500 Pa・s以上且2500 Pa・s以下。上述黏度之下限更佳為550 Pa・s，進而較佳為600 Pa・s，尤佳為700 Pa・s。另一方面，上述黏度之上限更佳為2400 Pa・s，進而較佳為2300 Pa・s，尤佳為2200 Pa・s。藉由將接著膜之熱硬化前之於150℃下之黏度設為上述範圍，可進一步提高加壓硬化步驟中之空隙消失性。 接著膜之層構成並無特別限定，例如可列舉：僅由接著膜單層構成之接著膜、於芯材料之單面或兩面形成有接著膜之多層結構之接著膜等。此處，作為上述芯材料，可列舉：膜(例如聚醯亞胺膜、聚酯膜、聚對苯二甲酸乙二酯膜、聚萘二甲酸乙二酯膜、聚碳酸酯膜等)、經玻璃纖維或塑膠製不織纖維強化之樹脂基板、矽基板或玻璃基板等。又，亦可作為將接著膜與切晶片材製成一體而得之一體型膜而使用。 (切晶膜) 作為上述切晶膜，例如可列舉於基材4上積層有黏著劑層3者。接著膜22係積層於黏著劑層3上。另外亦可為如圖2所示般僅於半導體晶圓貼附部分22a(參照圖1)形成有接著膜22'之構成。 (基材) 上述基材4係成為切晶黏晶膜10、10'之強度母體之材料。例如可列舉：低密度聚乙烯、直鏈狀聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚合聚丙烯、嵌段共聚合聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯等聚烯烴；乙烯-乙酸乙烯酯共聚物、離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(無規、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚胺酯、聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯等聚酯；聚碳酸酯、聚醯亞胺、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚苯硫醚、芳醯胺(紙)、玻璃、玻璃布、氟樹脂、聚氯乙烯、聚偏氯乙烯、纖維素系樹脂、矽酮樹脂、金屬(箔)、紙等。於黏著劑層3為紫外線硬化型之情形時，基材4較佳為對紫外線具有透過性者。 又，作為基材4之材料，可列舉上述樹脂之交聯體等聚合物。上述塑膠膜可以無拉伸之狀態使用，亦可視需要使用實施過單軸或雙軸之拉伸處理者。根據藉由拉伸處理等而賦予有熱收縮性之樹脂片，藉由於切晶後使該基材4熱收縮而減少黏著劑層3與接著膜22之接著面積，能夠實現半導體元件之容易回收。 為了提高與鄰接之層之密接性、保持性等，基材4之表面可實施慣用之表面處理，例如鉻酸處理、臭氧暴露、火焰暴露、高壓電擊暴露、離子化放射線處理等化學處理或物理處理、利用底塗劑(例如後述之黏著物質)之塗佈處理。 基材4可適當選擇使用同種或異種之基材，可視需要使用摻混有複數種者。又，為了對基材4賦予抗靜電性能，可於上述基材4上設置包含金屬、合金、該等之氧化物等之厚度30～500 Å左右之導電性物質之蒸鍍層。基材4可為單層或2種以上之複層。 基材4之厚度並無特別限定，可適當地決定，通常為5～200 μm左右。 再者，於無損本發明之效果等之範圍內，基材4中亦可含有各種添加劑(例如著色劑、填充劑、塑化劑、抗老化劑、抗氧化劑、界面活性劑、阻燃劑等)。 (黏著劑層) 用於形成黏著劑層3之黏著劑只要為能夠可剝離地控制接著膜3者則並無特別限制。例如，可使用丙烯酸系黏著劑、橡膠系黏著劑等通常之感壓性黏著劑。作為上述感壓性黏著劑，就半導體晶圓或玻璃等忌避污染之電子零件之利用超純水或醇等有機溶劑之清潔清洗性等方面而言，較佳為以丙烯酸系聚合物為基礎聚合物之丙烯酸系黏著劑。 作為上述丙烯酸系聚合物，可列舉使用丙烯酸酯作為主要單體成分之聚合物。例如可列舉：將作為上述丙烯酸酯之(甲基)丙烯酸烷基酯(例如甲酯、乙酯、丙酯、異丙酯、丁酯、異丁酯、第二丁酯、第三丁酯、戊酯、異戊酯、己酯、庚酯、辛酯、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一烷基酯、十二烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯、二十烷基酯等烷基之碳數為1～30、尤其是碳數為4～18之直鏈狀或支鏈狀之烷基酯等)以及(甲基)丙烯酸環烷基酯(例如環戊酯、環己酯等)中之1種或2種以上用作單體成分之丙烯酸系聚合物等。再者，(甲基)丙烯酸酯係指丙烯酸酯及/或甲基丙烯酸酯，本發明之(甲基)全部為相同之含義。 為了實現凝集力、耐熱性等之改質，上述丙烯酸系聚合物亦可視需要包含對應於能夠與上述(甲基)丙烯酸烷基酯或環烷基酯共聚合之其他單體成分的單元。作為此種單體成分，例如可列舉：丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧基乙酯、(甲基)丙烯酸羧基戊酯、伊康酸、馬來酸、富馬酸、丁烯酸等含羧基單體；馬來酸酐、伊康酸酐等酸酐單體；(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯、(甲基)丙烯酸(4-羥基甲基環己基)甲酯等含羥基單體；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯醯氧基萘磺酸等含磺酸基單體；2-羥基乙基丙烯醯基磷酸酯等含磷酸基單體；丙烯醯胺、丙烯腈等。該等能夠共聚合之單體成分可使用1種或2種以上。該等能夠共聚合之單體之使用量較佳為全部單體成分之40重量%以下。 進而，為了進行交聯，上述丙烯酸系聚合物亦可視需要包含多官能性單體等作為共聚合用單體成分。作為此種多官能性單體，例如可列舉：己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、環氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、(甲基)丙烯酸胺基甲酸酯等。該等多官能性單體亦可使用1種或2種以上。就黏著特性等方面而言，多官能性單體之使用量較佳為全部單體成分之30重量%以下。 上述丙烯酸系聚合物可藉由使單一單體或2種以上之單體混合物進行聚合而獲得。聚合亦可以溶液聚合、乳化聚合、塊狀聚合、懸浮聚合等任意方式進行。就防止對清潔之被接著體之污染等方面而言，較佳為低分子量物質之含量較少。就該方面而言，丙烯酸系聚合物之數量平均分子量較佳為30萬以上，進而較佳為40萬～300萬左右。 又，於上述黏著劑中，為了提高作為基礎聚合物之丙烯酸系聚合物等之數量平均分子量，亦可適當採用外部交聯劑。作為外部交聯方法之具體方法，可列舉如下方法：添加多異氰酸酯化合物、環氧化合物、氮丙啶化合物、三聚氰胺系交聯劑等所謂之交聯劑並使其反應之方法。於使用外部交聯劑之情形時，其用量根據應交聯之基礎聚合物之平衡性、進而根據作為黏著劑之使用用途而適當決定。通常較佳為相對於上述基礎聚合物100重量份，調配10重量份左右以下、進而0.1～10重量份。進而，於黏著劑中，視需要除上述成分以外，亦可使用先前公知之各種黏著賦予劑、抗老化劑等添加劑。 黏著劑層3可由放射線硬化型黏著劑而形成。放射線硬化型黏著劑可藉由照射紫外線等放射線而使交聯度增大，從而使其黏著力容易降低。例如，藉由僅對圖2所示之黏著劑層3之部分3a照射放射線，可設置與部分3b之黏著力差。 又，藉由與接著膜22'相應地使放射線硬化型黏著劑層3硬化，能夠容易地形成黏著力顯著降低之部分3a。由於在硬化且黏著力降低之部分3a貼附有接著膜22'，故而部分3a與接著膜22'之界面具有拾取時容易剝離之性質。另一方面，未照射放射線之部分具有充分之黏著力，形成部分3b。 如上所述，於圖1所示之切晶黏晶膜10之黏著劑層3中，由未硬化之放射線硬化型黏著劑所形成之上述部分3b與接著膜22黏著，可確保切晶時之保持力。如此，放射線硬化型黏著劑可接著/剝離之平衡性良好地支持用以將半導體晶片固定在基板等被接著體之接著膜22。於圖2所示之切晶黏晶膜10'之黏著劑層3中，上述部分3b可固定晶圓環。 放射線硬化型黏著劑只要具有碳-碳雙鍵等放射線硬化性官能基且顯示黏著性，則可並無特別限制地使用。作為放射線硬化型黏著劑，例如可例示於上述丙烯酸系黏著劑、橡膠系黏著劑等通常之感壓性黏著劑中調配有放射線硬化性單體成分或低聚物成分而成之添加型放射線硬化型黏著劑。 作為所調配之放射線硬化性單體成分，例如可列舉：胺基甲酸酯低聚物、(甲基)丙烯酸胺基甲酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。又，放射線硬化性低聚物成分可列舉：胺基甲酸酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各種低聚物，其重量平均分子量適宜為100～30000左右之範圍。放射線硬化性單體成分、低聚物成分之調配量可根據上述黏著劑層之種類而適當決定可降低黏著劑層之黏著力之量。通常，相對於構成黏著劑之丙烯酸系聚合物等基礎聚合物100重量份，例如為5～500重量份、較佳為40～150重量份左右。 又，作為放射線硬化型黏著劑，除了上述說明之添加型放射線硬化型黏著劑以外，還可列舉使用在聚合物側鏈或主鏈中或者主鏈末端具有碳-碳雙鍵者作為基礎聚合物之內在型放射線硬化型黏著劑。內在型放射線硬化型黏著劑無需含有作為低分子成分之低聚物成分等，或大多不含，因此，低聚物成分等不會經時地在黏著劑層中移動，能夠形成層結構穩定之黏著劑層，故而較佳。 上述具有碳-碳雙鍵之基礎聚合物可並無特別限制地使用具有碳-碳雙鍵且具有黏著性者。作為此種基礎聚合物，較佳為以丙烯酸系聚合物作為基本骨架者。作為丙烯酸系聚合物之基本骨架，可列舉上述例示之丙烯酸系聚合物。 對上述丙烯酸系聚合物導入碳-碳雙鍵之方法並無特別限定，可採用各種方法，但將碳-碳雙鍵導入至聚合物側鏈之分子設計較為容易。例如可列舉如下方法：預先使丙烯酸系聚合物與具有官能基之單體進行共聚合，然後使具有能夠與該官能基反應之官能基及碳-碳雙鍵之化合物在維持碳-碳雙鍵之放射線硬化性之狀態下進行縮聚或加成反應。 作為該等官能基之組合之例，可列舉：羧酸基與環氧基、羧酸基與氮丙啶基、羥基與異氰酸酯基等。該等官能基之組合中，就追蹤反應之容易性而言，適宜為羥基與異氰酸酯基之組合。又，只要為藉由該等官能基之組合而生成上述具有碳-碳雙鍵之丙烯酸系聚合物之組合，則官能基可位於丙烯酸系聚合物與上述化合物中之任一側，但在上述較佳之組合中，適宜為丙烯酸系聚合物具有羥基且上述化合物具有異氰酸酯基之情況。此時，作為具有碳-碳雙鍵之異氰酸酯化合物，例如可列舉：甲基丙烯醯基異氰酸酯、異氰酸2-甲基丙烯醯氧基乙酯、間-異丙烯基-α,α-二甲基苄基異氰酸酯等。又，作為丙烯酸系聚合物，可使用將上述例示之含羥基單體或2-羥基乙基乙烯基醚、4-羥基丁基乙烯基醚、二乙二醇單乙烯基醚之醚系化合物等共聚合而得者。 上述內在型放射線硬化型黏著劑可單獨使用上述具有碳-碳雙鍵之基礎聚合物(尤其是丙烯酸系聚合物)，亦可以不使特性惡化之程度調配上述放射線硬化性單體成分或低聚物成分。放射線硬化性之低聚物成分等通常相對於基礎聚合物100重量份為30重量份之範圍內，較佳為0～10重量份之範圍。 上述放射線硬化型黏著劑較佳為於藉由紫外線等進行硬化之情形時含有光聚合起始劑。作為光聚合起始劑，例如可列舉：4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、1-羥基環己基苯基酮等α-酮醇系化合物；甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)-苯基]-2-嗎啉基丙烷-1-酮等苯乙酮系化合物；安息香乙醚、安息香異丙醚、茴香偶姻甲醚等安息香醚系化合物；苯偶醯二甲基縮酮等縮酮系化合物；2-萘磺醯氯等芳香族磺醯氯系化合物；1-苯基-1,2-丙二醇-2-(O-乙氧基羰基)肟等光活性肟系化合物；二苯甲酮、苯甲醯苯甲酸、3,3'-二甲基-4-甲氧基二苯甲酮等二苯甲酮系化合物；9-氧硫𠮿、2-氯9-氧硫[𠮿、2-甲基9-氧硫𠮿、2,4-二甲基9-氧硫𠮿、異丙基9-氧硫𠮿、2,4-二氯9-氧硫𠮿、2,4-二乙基9-氧硫𠮿、2,4-二異丙基9-氧硫𠮿等9-氧硫𠮿系化合物；樟腦醌；鹵代酮；醯基氧化膦；醯基膦酸酯等。光聚合起始劑之調配量相對於構成黏著劑之丙烯酸系聚合物等基礎聚合物100重量份例如為0.05～20重量份左右。 於利用放射線硬化型黏著劑形成黏著劑層3之情形時，較佳為以使部分3a之黏著力＜部分3b之黏著力之方式對黏著劑層3之一部分照射放射線。於圖2之切晶黏晶膜中，例如使對於作為被接著體之SUS304板(#2000研磨)之關係成為部分3a之黏著力＜部分3b之黏著力。 作為於上述黏著劑層3上形成上述部分3a之方法，可列舉：於基材4上形成放射線硬化型黏著劑層3後，對上述部分3a局部照射放射線而使其硬化之方法。局部之放射線照射可隔著形成有如下圖案之光罩來進行，該圖案與對應於半導體晶圓貼附部分22a之黏著劑層3之部分3a以外的部分3b等相對應。又，可列舉點狀(spot)地照射紫外線而使其硬化之方法等。放射線硬化型黏著劑層3之形成可藉由將設置在隔離膜上者轉印至基材4上來進行。局部之放射線硬化亦可對設置在隔離膜上之放射線硬化型黏著劑層3進行。 又，於由放射線硬化型黏著劑形成黏著劑層3之情形時，使用對基材4之至少單面之除與半導體晶圓貼附部分22a對應之部分3a以外之部分之全部或一部分進行了遮光者，對其形成放射線硬化型黏著劑層3後照射放射線，使與半導體晶圓貼附部分22a對應之部分3a硬化，從而可形成使黏著力降低之上述部分3a。作為遮光材料，可藉由於支持膜上將能夠成為光罩之材料進行印刷或蒸鍍等而製作。根據該製造方法，能夠高效地製造本發明之切晶黏晶膜10。 再者，於照射放射線時發生因氧氣引起之硬化抑制之情況下，理想的是利用某種方法阻斷氧氣(空氣)使其遠離放射線硬化型黏著劑層3之表面。例如可列舉：將上述黏著劑層3之表面利用隔離膜被覆之方法、於氮氣環境中進行紫外線等放射線之照射之方法等。 對黏著劑層3之厚度並無特別限定，就防止晶片切斷面之缺損或接著層之固定保持之兼顧性等觀點而言，較佳為1～50 μm左右。較佳為2～30 μm，進而較佳為5～25 μm。 再者，於無損本發明之效果等之範圍內，黏著劑層3亦可以包含各種添加劑(例如著色劑、增黏劑、增量劑、填充劑、黏著賦予劑、塑化劑、抗老化劑、抗氧化劑、界面活性劑、交聯劑等)。 (接著膜之製造方法) 本實施形態之接著膜例如藉由如下方式製作。首先，製備接著膜形成用之接著劑組合物。作為製備方法，並無特別限定，例如可將在接著膜之項中說明之熱硬化性樹脂、熱塑性樹脂、其他添加劑等投入至容器，使其溶於有機溶劑中，並攪拌至均勻，從而以接著劑組合物溶液之形式獲得。 作為上述有機溶劑，只要為能夠將構成接著膜之成分均勻地溶解、混練或分散者則並無限制，可使用先前公知之溶劑。作為此種溶劑，例如可列舉：二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯啶酮、丙酮、甲基乙基酮、環己酮等酮系溶劑、甲苯、二甲苯等。就乾燥速度較快、可廉價地獲得之方面而言，較佳為使用甲基乙基酮、環己酮等。 將如上述般製備之接著劑組合物溶液以特定厚度塗佈於隔離膜上而形成塗佈膜後，使該塗佈膜於特定條件下乾燥。作為隔離膜，可使用聚對苯二甲酸乙二酯(PET)、聚乙烯、聚丙烯或由氟系剝離劑、丙烯酸長鏈烷基酯系剝離劑等剝離劑進行了表面塗佈之塑膠膜或紙等。又，作為塗佈方法，並無特別限定，例如可列舉輥塗敷、網版塗敷、凹版塗敷等。又，作為乾燥條件。例如可於乾燥溫度70～160℃、乾燥時間1～5分鐘之範圍內進行。藉此，可獲得本實施形態之接著膜。 (切晶黏晶膜之製造方法) 切晶黏晶膜10、10'例如可藉由預先分別製作切晶膜及接著膜，最後將該等貼合來製作。具體而言，可按照以下之程序製作。 首先，基材4可利用先前公知之製膜方法而製膜。作為該製膜方法，例如可例示壓延製膜法、有機溶劑中之澆鑄法、密閉系統中之吹脹擠出法、T模擠出法、共擠出法、乾式層壓法等。 繼而，製備黏著劑層形成用之黏著劑組合物。於黏著劑組合物中調配有在黏著劑層項中說明之樹脂或添加物等。於基材4上塗佈所製備之黏著劑組合物而形成塗佈膜後，使該塗佈膜在特定條件下乾燥(視需要進行加熱交聯)，而形成黏著劑層3。作為塗佈方法，並無特別限定，例如可列舉輥塗敷、網版塗敷、凹版塗敷等。又，作為乾燥條件，例如於乾燥溫度80～150℃、乾燥時間0.5～5分鐘之範圍內進行。又，亦可於隔離膜上塗佈黏著劑組合物而形成塗佈膜後，以上述乾燥條件使塗佈膜乾燥，而形成黏著劑層3。其後，將黏著劑層3與隔離膜一起貼合在基材4上。藉此，可製作具備基材4及黏著劑層3之切晶膜。 繼而，自切晶膜剝離隔離膜，以使接著膜與黏著劑層成為貼合面之方式將兩者貼合。貼合例如可藉由壓接來進行。此時，層壓溫度並無特別限定，例如較佳為30～70℃，更佳為40～60℃。又，線壓並無特別限定，例如較佳為0.1～20 kgf/cm，更佳為1～10 kgf/cm。其次，剝離接著膜上之隔離膜，獲得本實施形態之切晶黏晶膜。 (半導體裝置之製造方法) 於本實施形態之半導體裝置之製造方法中，經由第1固定步驟及第1導線接合步驟，預先準備安裝(固定)有至少1個第1半導體元件之被接著體(被接著體準備步驟)，對該第1半導體元件，藉由經過切晶及拾取之接著膜將上述第1半導體元件包埋並且將與上述第1半導體元件不同之第2半導體元件固定於上述被接著體。圖3A～圖3H係分別示意性地表示本發明之一實施形態之半導體裝置之製造方法之一步驟的剖視圖。 (第1固定步驟) 如圖3A所示，於第1固定步驟中，將至少1個第1半導體元件11固定於被接著體1上。第1半導體元件11經由第1接著膜21固定於被接著體1。在圖3A中，第1半導體元件11僅示出有1個，但根據目標半導體裝置之規格，亦可將2個、3個、4個或5個以上之複數個第1半導體元件11固定於被接著體1。 (第1半導體元件) 作為第1半導體元件11，只要為俯視尺寸小於積層於第2層之半導體元件(第2半導體元件12；參照圖3F)之元件，則並無特別限定，例如可適宜地使用作為半導體元件之一種之控制器或記憶體晶片、邏輯晶片(logic chip)。控制器控制所積層之各半導體元件之作動，故而通常連接多根導線。半導體封裝之通信速度受到導線長度之影響，但本實施形態中由於第1半導體元件11被固定於被接著體1並位於最下層，故而能夠縮短導線長度，藉此即使增加半導體元件之積層數，亦可抑制半導體封裝(半導體裝置)之通信速度之降低。 第1半導體元件11之厚度並無特別限定，但通常大多情況下為100 μm以下。又，隨著近年來之半導體封裝之薄型化，亦逐漸使用75 μm以下、進而50 μm以下之第1半導體元件11。 (被接著體) 作為被接著體1，可列舉基板或引線框架、其他半導體元件等。作為基板，可使用印刷配線基板等先前公知之基板。又，作為上述引線框架，可使用Cu引線框架、42合金引線框架等金屬引線框架、或包含玻璃環氧樹脂、BT(雙馬來醯亞胺-三𠯤)、聚醯亞胺等之有機基板。但是，本實施形態不限定於此，還包括能夠安裝半導體元件並與半導體元件電性連接而使用之電路基板。 (第1接著膜) 作為第1接著膜21，可使用上述包埋用接著膜，亦可使用先前公知之半導體元件固定用接著膜。其中，於使用包埋用接著膜之情形時，第1接著膜21無需包埋半導體元件，因此只要使厚度薄至5 μm～60 μm左右而使用即可。 (固定方法) 如圖3A所示，經由第1接著膜21將第1半導體元件11黏晶於被接著體1。作為將第1半導體元件11固定在被接著體1上之方法，例如可列舉如下方法：於被接著體1上積層第1接著膜21後，以使導線接合面為上側之方式在該第1接著膜21上積層第1半導體元件11。又，亦可將預先貼附有第1接著膜21之第1半導體元件11配置在被接著體1上進行積層。 第1接著膜21為半硬化狀態，因此向被接著體1上載置第1接著膜21後，進行特定條件下之熱處理，藉此使第1接著膜21熱硬化，而使第1半導體元件11固定於被接著體1上。進行熱處理時之溫度較佳為以100～200℃進行，更佳為於120℃～180℃之範圍內進行。又，熱處理時間較佳為以0.25～10小時進行，更佳為以0.5～8小時進行。 (第1導線接合步驟) 第1導線接合步驟係將被接著體1之端子部(例如內引線)之前端與第1半導體元件11上之電極墊(未圖示)利用接合線31進行電性連接之步驟(參照圖3B)。作為接合線31，例如可使用金線、銀線、鋁線或銅線等。進行導線接合時之溫度可於80～250℃、較佳為80～220℃之範圍內進行。又，其加熱時間係以數秒～數分鐘進行。接線可於加熱至上述溫度範圍內之狀態下藉由將超音波之振動能與施加加壓之壓接能加以併用而進行。 (晶圓貼合步驟) 另外如圖3C所示，將半導體晶圓2壓接在切晶黏晶膜10中之包埋用接著膜22上，並使其保持接著而固定(貼合步驟)。本步驟係利用壓接輥等按壓機構進行按壓之同時進行。 (切晶步驟) 其次，如圖3D所示，進行半導體晶圓2之切割。藉此，將半導體晶圓2切斷成特定之尺寸而單片化，製造半導體晶片12(切晶步驟)。切晶例如可自半導體晶圓2之電路面側按照常規方法來進行。又，本步驟中，例如可採用切入至切晶膜5之被稱為全切(full cut)之切斷方式等。作為本步驟中使用之切晶裝置，並無特別限定，可使用先前公知者。又，半導體晶圓由切晶黏晶膜10接著固定，因此可抑制晶片缺損或晶片飛散，並且亦可抑制半導體晶圓2之破損。又，由於使用包埋用接著膜22，故而可防止切晶後之再接著，可良好地進行接下來之拾取步驟。 (拾取步驟) 如圖3E所示，為了將接著固定於切晶黏晶膜10之半導體元件12剝離，而將包埋用接著膜22與半導體元件12一起拾取(拾取步驟)。作為拾取之方法，並無特別限定，可採用先前公知之各種方法。例如可列舉：用針自基材4側將各個半導體晶片12頂起，並利用拾取裝置拾取被頂起之半導體晶片12之方法等。 此處，於黏著劑層3為紫外線硬化型之情形時，拾取係於對該黏著劑層3照射紫外線後進行。藉此，黏著劑層3對接著膜22之黏著力降低，半導體元件12之剝離變得容易。其結果，可於無損半導體元件之情況下進行拾取。紫外線照射時之照射強度、照射時間等條件並無特別限定，只要視需要適當進行設定即可。又，作為用於紫外線照射之光源，可使用高壓水銀燈、微波激發型燈、化學燈等。 (第2固定步驟) 於第2固定步驟中，利用與第2半導體元件12一起拾取之包埋用接著膜22，將另外固定在被接著體1上之第1半導體元件11包埋並且將與上述第1半導體元件11不同之第2半導體元件12固定於上述被接著體1(參照圖3F)。包埋用接著膜22具有較上述第1半導體元件11之厚度T1 更厚之厚度T。本實施形態中，上述被接著體1與上述第1半導體元件11之電性連接係藉由導線接合連接而達成，因此上述厚度T與上述厚度T1 之差較佳為40 μm以上且260 μm以下。上述厚度T與上述厚度T1 之差之下限較佳為40 μm以上，但更佳為50 μm以上，進而較佳為60 μm以上。又，上述厚度T與上述厚度T1 之差之上限較佳為260 μm以下，但更佳為200 μm以下，進而較佳為150 μm以下。藉此，可實現半導體裝置整體之薄型化並且亦可防止第1半導體元件11與第2半導體元件12之接觸，且將第1半導體元件11整體包埋於包埋用接著膜22之內部，能夠使作為控制器之第1半導體元件11於被接著體1上之固定(即，於導線長度最短之最下層之固定)成為可能。 包埋用接著膜22之厚度T只要以能夠包埋第1半導體元件11之方式並考慮第1半導體元件11之厚度T1 及導線伸出量而適當設定即可，其下限較佳為80 μm以上，更佳為100 μm以上，進而較佳為120 μm以上。另一方面，厚度T之上限較佳為300 μm以下，更佳為200 μm以下，進而較佳為150 μm以下。藉由如此使接著膜較厚，可基本上覆蓋通常之控制器之厚度，能夠容易地進行第1半導體元件11於包埋用接著膜22中之包埋。 (第2半導體元件) 作為第2半導體元件12，並無特別限定，例如可使用受到作為控制器之第1半導體元件11之作動控制之記憶體晶片。 (固定方法) 作為將第2半導體元件12固定在被接著體1上之方法，與第1固定步驟同樣地，例如可列舉如下方法：於被接著體1上積層包埋用接著膜22後，以使導線接合面成為上側之方式在該包埋用接著膜22上積層第2半導體元件12。又，亦可將預先貼附有包埋用接著膜22之第2半導體元件12配置在被接著體1上進行積層。 為了使第1半導體元件11在包埋用接著膜22中之進入及包埋容易進行，可於黏晶時對包埋用接著膜22進行加熱處理。作為加熱溫度，只要為包埋用接著膜22軟化且未完全熱硬化之溫度即可，較佳為80℃以上且150℃以下，更佳為100℃以上且130℃以下。此時亦可以0.1 MPa以上且1.0 MPa以下進行加壓。 (加壓硬化步驟) 包埋用接著膜22由於為半硬化狀態，故而將包埋用接著膜22載置於被接著體1上後，進行加壓條件下之加熱處理，藉此使包埋用接著膜22熱硬化，完成第2半導體元件12於被接著體1上之固定。 作為於加壓下進行加熱之方法，例如可列舉將載置有包埋用接著膜22之被接著體1配置在填充有惰性氣體之加壓室內並進行加熱之方法。加壓環境之壓力較佳為1 kg/cm2 (9.8×10-2 MPa)以上，更佳為2 kg/cm2 (1.96×10-1 MPa)以上，進而較佳為3 kg/cm2 (2.94×10-1 MPa)以上。若為1 kg/cm2 以上，則可容易地使包埋用接著膜22與被接著體1之界面處之空隙消失。再者，壓力之上限越高越佳。雖然就裝置之通常之設定極限而言為10 kg/cm2 (9.8×10-1 MPa)左右，但只要技術上可實現則亦可高於該值。 加壓下進行加熱時之加熱溫度較佳為100℃以上，更佳為110℃以上，進而較佳為120℃以上，尤佳為140℃以上。若為100℃以上，則可將包埋用接著膜22設為適度之硬度，藉由加壓硬化能夠使空隙有效地消失。加熱溫度較佳為220℃以下，更佳為200℃以下，更佳為180℃以下。若為220℃以下，則可抑制空隙之急劇膨脹。 加熱時間較佳為0.1小時以上，更佳為0.2小時以上，進而較佳為0.5小時以上。若為0.1小時以上，則可充分獲得加壓之效果。加熱時間較佳為10小時以下，更佳為3小時以下，進而較佳為1小時以下。 此時，熱硬化後之包埋用接著膜22相對於被接著體1之剪切接著力在25～250℃下較佳為0.1 MPa以上，更佳為0.2～10 MPa。若將包埋用接著膜22之剪切接著力設為0.1 MPa以上，則可抑制因針對第2半導體元件12之導線接合步驟中之超音波振動或加熱而於包埋用接著膜22與第2半導體元件12或被接著體1之接著面產生剪切變形。即，可抑制第2半導體元件12因導線接合時之超音波振動而發生移動，藉此能夠防止導線接合之成功率降低。 (第3固定步驟) 於第3固定步驟中，將與該第2半導體元件同種或異種之第3半導體元件13固定於上述第2半導體元件12上(參照圖3G)。第3半導體元件13經由第3接著膜23固定於第2半導體元件12。 (第3半導體元件) 第3半導體元件13亦可為與第2半導體元件12同種之記憶體晶片、或與第2半導體元件12異種之記憶體晶片。第3半導體元件13之厚度亦可根據目標半導體裝置之規格而適當設定。 (第3接著膜) 作為第3接著膜23，可適宜地使用與第1固定步驟中之第1接著膜21同樣者。於使用包埋用接著膜22作為第3接著膜23之情形時，由於無需包埋其他半導體元件，故而只要將厚度減薄為5 μm～60 μm左右而使用即可。 (固定方法) 如圖3G所示，經由第3接著膜23將第3半導體元件13黏晶於第2半導體元件12。作為將第3半導體元件13固定於第2半導體元件12上之方法，例如可列舉如下方法：於第2半導體元件12上積層第3接著膜23後，以使導線接合面成為上側之方式在該第3接著膜23上積層第3半導體元件13。又，亦可將預先貼附有第3接著膜23之第3半導體元件13配置於第2半導體元件12上進行積層。其中，為了實現下述第2半導體元件12與第3半導體元件13之間之導線接合，存在以避開第2半導體元件12之導線接合面(上表面)之電極墊之方式將第3半導體元件13相對於第2半導體元件12錯開而固定之情況。此時，若預先將第3接著膜23貼附於第2半導體元件12之上表面，則第3接著膜23自第2半導體元件12之上表面伸出之部分(所謂懸突(overhang)部)彎折而附著於第2半導體元件12之側面或包埋用接著膜22之側面，有產生不可預期之不良情況之虞。因此，於第3固定步驟中，較佳為預先將第3接著膜23貼附於第3半導體元件13，將其配置於第2半導體元件12上進行積層。 由於第3接著膜23亦為半硬化狀態，故而向第2半導體元件12上載置第3接著膜23後，進行特定條件下之熱處理，藉此使第3接著膜23熱硬化，而使第3半導體元件13固定於第2半導體元件12上。再者，考慮到第3接著膜23之彈性模數或製程效率，亦可不進行熱處理而將第3半導體元件13固定。進行熱處理時之溫度較佳為以100～200℃進行，更佳為以120℃～180℃之範圍內進行。又，熱處理時間較佳為以0.25～10小時進行，更佳為以0.5～8小時進行。 (第2導線接合步驟) 第2導線接合步驟係將第2半導體元件12上之電極墊(未圖示)與第3半導體元件13上之電極墊(未圖示)利用接合線32進行電性連接之步驟(參照圖3H)。導線之材料或導線接合條件可適宜地採用與第1導線接合步驟同樣者。 (半導體裝置) 藉由以上步驟，可製造將3個半導體元件經由特定之接著膜進行多層積層之半導體裝置100。進而，藉由重複與第3固定步驟及第2導線接合步驟同樣之步驟，可製造積層有4個以上之半導體元件之半導體裝置。 (密封步驟) 積層所需數量之半導體元件後，亦可進行將半導體裝置100整體進行樹脂密封之密封步驟。密封步驟係利用密封樹脂密封半導體裝置100之步驟(未圖示)。本步驟係為了保護搭載於被接著體1之半導體元件或接合線而進行。本步驟例如藉由利用模具將封裝用樹脂成型而進行。作為密封樹脂，例如使用環氧系樹脂。關於樹脂密封時之加熱溫度，通常於175℃下進行60～90秒，但本實施形態不限定於此，例如可以於165～185℃下固化數分鐘。又，於本步驟中，樹脂密封時亦可進行加壓。此時，加壓之壓力較佳為1～15 MPa，更佳為3～10 MPa。 (後硬化步驟) 於本實施形態中，亦可於密封步驟之後進行將密封樹脂後硬化(after cure)之後硬化步驟。本步驟中，使上述密封步驟中硬化不足之密封樹脂完全硬化。本步驟中之加熱溫度因密封樹脂之種類而有所不同，例如於165～185℃之範圍內，加熱時間為0.5～8小時左右。藉由經由密封步驟或後硬化步驟，能夠製作半導體封裝。 [第2實施形態] 於第1實施形態中，藉由接著膜，進行第1半導體元件於被接著體上之固定，藉由導線接合實現兩者間之電性連接，但第2實施形態中，藉由使用設置於第1半導體元件之突起電極之覆晶連接而實現兩者間之固定及電性連接。因此，第2實施形態中，僅第1固定步驟中之固定方式與第1實施形態不同，因此以下主要對該不同點進行說明。 (第1固定步驟) 本實施形態中，於上述第1固定步驟中，藉由覆晶連接將第1半導體元件41固定於被接著體1(參照圖4A)。於覆晶連接中，成為第1半導體元件41之電路面與被接著體1相對向之所謂面朝下安裝。第1半導體元件41上設置有複數個凸塊等突起電極43，突起電極43與被接著體1上之電極(未圖示)連接。又，於被接著體1與第1半導體元件41之間，為了緩和兩者間之熱膨脹係數之差、或保護兩者間之空間，填充有底部填充材44。 作為連接方法，並無特別限定，可藉由先前公知之覆晶接合機連接。例如，藉由使形成於第1半導體元件41之凸塊等突起電極43與覆著於被接著體1之連接墊之接合用導電材(焊料等)接觸並按壓並且使導電材料熔融，可確保第1半導體元件41與被接著體1之電性導通，可使第1半導體元件41固定於被接著體1(覆晶接合)。通常，作為覆晶連接時之加熱條件，為240～300℃，作為加壓條件，為0.5～490 N。 關於形成凸塊作為突起電極43時之材質，並無特別限定，例如可列舉：錫-鉛系金屬材料、錫-銀系金屬材料、錫-銀-銅系金屬材料、錫-鋅系金屬材料、錫-鋅-鉍系金屬材料等焊料類(合金)、金系金屬材料、銅系金屬材料等。 作為底部填充材44，可使用先前公知之液狀或膜狀之底部填充材。 (第2固定步驟) 於第2固定步驟中，與第1實施形態同樣，利用包埋用接著膜22將上述第1半導體元件41包埋並且將與上述第1半導體元件41不同之第2半導體元件12固定於上述被接著體1(參照圖4B)。本步驟中之條件與第1實施形態中之第2固定步驟同樣。 包埋用接著膜22具有較上述第1半導體元件41之厚度T1 更厚之厚度T。本實施形態中，上述被接著體1與上述第1半導體元件41被覆晶連接，因此上述厚度T與上述厚度T1 之差較佳為10 μm以上且200 μm以下。上述厚度T與上述厚度T1 之差之下限較佳為10 μm以上，但更佳為20 μm以上，進而較佳為30 μm以上。又，上述厚度T與上述厚度T1 之差之上限較佳為200 μm以下，但更佳為150 μm以下，進而較佳為100 μm以下。藉由此種構成，可於實現半導體裝置整體之薄型化之同時，防止第1半導體元件41與第2半導體元件12之接觸並且將第1半導體元件41整體包埋於包埋用接著膜22之內部，能夠作為控制器之第1半導體元件41於被接著體1上之固定(即，於通信路徑長度成為最短之最下層之固定)成為可能。 包埋用接著膜22之厚度T只要以能夠包埋第1半導體元件41之方式考慮第1半導體元件41之厚度T1 及突起電極之高度而適當設定即可，其下限較佳為50 μm以上，更佳為60 μm以上，進而較佳為70 μm以上。另一方面，厚度T之上限較佳為250 μm以下，更佳為200 μm以下，進而較佳為150 μm以下。藉由如此使包埋用接著膜22相對較厚，可基本上覆蓋通常之控制器之厚度，能夠容易地進行第1半導體元件41於包埋用接著膜22中之包埋。 (加熱硬化步驟) 包埋用接著膜22由於為半硬化狀態，故而於被接著體1上載置包埋用接著膜22後進行加壓條件下之加熱處理，藉此使包埋用接著膜22熱硬化，結束第2半導體元件12於被接著體1上之固定。加熱硬化步驟中之各條件與第1實施形態中相同。 繼而，與第1實施形態同樣，藉由經由於第2半導體元件12上固定與該第2半導體元件12同種或異種之第3半導體元件13之第3固定步驟(參照圖4C)、及藉由接合線32將上述第2半導體元件12與上述第3半導體元件13電性連接之第2導線接合步驟(參照圖4D)，可製作於最下層積層有控制器、且於其上方積層有複數層半導體元件之半導體裝置200。 (其他實施形態) 於第1實施形態中，經由使用切晶黏晶膜之切晶步驟及拾取步驟製作第2半導體元件12。進而，第1半導體元件11亦可同樣地使用切晶黏晶膜製作。此時，只要另外準備用以切出第1半導體元件11之半導體晶圓，然後經由上述晶圓貼合步驟、切晶步驟、拾取步驟將第1半導體元件11固定於被接著體1即可。第3半導體元件13及積層於其更上層之半導體元件亦可同樣地製作。 於被接著體上三維安裝半導體元件之情形時，亦可於半導體元件之形成有電路之面側形成有緩衝塗膜。作為該緩衝塗膜，例如可列舉：氮化矽膜或包含聚醯亞胺樹脂等耐熱樹脂者。 於各實施形態中，對每次積層第2半導體元件以後之半導體元件時進行導線接合步驟之態樣進行了說明，但亦可於積層複數個半導體元件後一次地進行導線接合步驟。再者，第1半導體元件由於被包埋用接著膜包埋，故而無法作為一次導線接合之對象。 作為覆晶連接之態樣，並不限定於第2實施形態中說明之利用作為突起電極之凸塊之連接，亦可採用利用導電性接著劑組合物之連接、利用將凸塊與導電性接著劑組合物組合之突起結構之連接等。再者，本發明中，只要為第1半導體元件之電路面與被接著體對向連接之面朝下安裝，則即使突起電極或突起結構等連接方式不同，而均稱為覆晶連接。作為導電性接著劑組合物，可使用於環氧樹脂等熱硬化性樹脂中混合金、銀、銅等導電性填料而得之先前公知之導電性糊劑等。於使用導電性接著劑組合物之情形時，於被接著體上搭載第1半導體元件後，藉由於80～150℃下進行0.5～10小時左右之熱硬化處理，可將第1半導體元件固定。 [實施例] 以下，例示性地詳細說明本發明之適宜之實施例。但是，該實施例中記載之材料或調配量等只要無特別限定記載，則並非意圖將該發明之範圍僅限定於此，而只不過為說明例。 [實施例1～5及比較例1～6] (接著膜之製作)按照表1所示之比率，準備作為熱塑性樹脂之丙烯酸系樹脂、作為熱硬化性樹脂之環氧樹脂及酚樹脂、以及作為無機填充劑之二氧化矽填料，準備相對於熱塑性樹脂、熱硬化性樹脂及無機填充劑之合計重量100份為0.1份之熱硬化觸媒，將該等分散並溶解於甲基乙基酮，製備濃度為40～50重量%之接著劑組合物溶液。 再者，下述表1中之簡稱及成分之詳情如下所述。 熱塑性樹脂：Nagase ChemteX Corporation製造，丙烯酸系樹脂「SG-70L」環氧樹脂：三菱化學公司製造，「YL-980」(液狀)環氧樹脂：DIC公司製造，「N-660」(軟化點：66℃)酚樹脂：明和化成股份有限公司製造，「MEH-7851SS」(軟化點：67℃)酚樹脂：明和化成股份有限公司製造，「MEH-7800H」(軟化點：87℃)無機填充劑：Admatechs股份有限公司製造，二氧化矽填料「SE-2050MC」熱硬化觸媒：北興化學公司製造，「TPP-K」 將該接著劑組合物溶液塗佈於作為剝離襯墊之經矽酮脫模處理之厚度為50 μm之包含聚對苯二甲酸乙二酯膜的脫模處理膜上，然後於130℃乾燥2分鐘，藉此製作厚度40 μm之接著劑塗膜。又，以下述層壓條件將所製作之3片接著劑塗膜貼合，藉此製作厚度120 μm之接著膜。 ＜層壓條件＞ 層壓裝置：滾筒貼合機層壓速度：10 mm/min層壓壓力：0.15 MPa層壓溫度：60℃ (黏度之測定) 對於各實施例及比較例中製作之熱硬化前之各接著膜，分別測定120℃及150℃下之黏度。即，使用流變儀(HAAKE公司製造，MARS)，藉由平行板法進行測定。自各實施例或比較例中製作之接著膜採取0.1 g之試樣，將其添加至預先於120℃下加熱過之板。其次，將自測定開始起經過300秒後之值作為熔融黏度。板間之間隙設為0.1 mm。關於150℃下之黏度，除了將加熱溫度設為150℃以外亦同樣地進行測定。將結果示於下述表1。 (切晶膜之製作) 準備厚度為50 μm之聚對苯二甲酸乙二酯膜(PET膜)作為基材。 於具備冷凝管、氮氣導入管、溫度計及攪拌裝置之反應容器中加入丙烯酸2-乙基己酯(以下亦稱為「2EHA」)86.4份、丙烯酸2-羥基乙酯(以下亦稱為「HEA」)13.6份、過氧化苯甲醯0.2份及甲苯65份，於氮氣氣流中以61℃進行6小時之聚合處理，獲得丙烯酸系聚合物A。 於丙烯酸系聚合物A中加入異氰酸2-甲基丙烯醯氧基乙酯(以下亦稱為「MOI」)14.6份，於空氣氣流中以50℃進行48小時之加成反應處理，獲得丙烯酸系聚合物A'。 其次，相對於丙烯酸系聚合物A' 100份加入多異氰酸酯化合物(商品名「CORONATE L」，Nippon Polyurethane股份有限公司製造)8份及光聚合起始劑(商品名「IRGACURE 651」、Ciba Specialty Chemicals公司製造)5份，獲得黏著劑組合物溶液。 於所準備之上述基材上塗佈所獲得之黏著劑組合物溶液並進行乾燥，而形成厚度30 μm之黏著劑層，藉此獲得切晶膜。 (切晶黏晶膜之製作) 將各實施例及比較例中製作之接著膜轉印至上述切晶膜之黏著劑層上，獲得切晶黏晶膜。再者，層壓之條件如下所述。 ＜層壓條件＞ 層壓裝置：滾筒貼合機層壓速度：10 mm/min層壓壓力：0.15 MPa層壓溫度：40℃ (第1半導體元件之固定) 以10 μm厚度製作實施例1之組成之接著劑塗膜，作為半導體晶片(控制器晶片)用之接著膜。將其在溫度40℃之條件下貼附於俯視4 mm×6 mm、厚度30 μm之半導體晶片。進而，經由接著膜將半導體元件接著於BGA基板。此時之條件設為溫度120℃、壓力0.1 MPa、1秒。進而，將接著有控制器晶片之BGA基板用乾燥機以130℃進行4小時之熱處理，使接著膜熱硬化。藉此獲得控制器安裝基板。 (第2半導體元件之固定) 另外使用上述切晶黏晶膜，按照以下之要點實際進行半導體晶圓之切割，然後經由半導體晶片之拾取製作半導體裝置，並且評價此時之拾取性能以及包埋/固定性。 於半導體晶圓上，以接著膜作為貼合面來貼合實施例及比較例之切晶黏晶膜。 ＜貼合條件＞ 貼合裝置：滾筒貼合機層壓速度：10 mm/min層壓壓力：0.15 MPa層壓溫度：70℃ 貼合後，按照下述條件進行切晶。又，切晶時，以成為8 mm×12 mm之晶片尺寸之方式進行全切。 ＜切晶條件＞ 切晶裝置：商品名「DFD-6361」DISCO公司製造切晶環：「2-8-1」(DISCO公司製造)切晶速度：30mm/秒切晶刀：Z1：DISCO公司製造之「203O-SE 27HCDD」Z2：DISCO公司製造之「203O-SE 27HCBB」切晶刀轉數：Z1：40,000 rpmZ2：45,000 rpm切割方式：步進切割晶圓晶片尺寸：8 mm×12 mm 其次，自基材側照射紫外線而使黏著劑層硬化。紫外線照射時，使用紫外線照射裝置(製品名：UM810，製造商：日東精機股份有限公司製造)，紫外線放射量設為400 mJ/cm2 。 然後，自各切晶膜之基材側，以利用針頂起之方式拾取接著膜與半導體晶片之積層體。拾取條件如下所述。 ＜拾取條件＞ 黏晶裝置：新川股份有限公司製造，裝置名：SPA-300針之根數：9根針頂起量：400 μm(0.40 mm)針頂起速度：5 mm/秒吸附保持時間：1000 ms 繼而，藉由所拾取之積層體之接著膜將控制器安裝基板之控制器晶片包埋，並且將作為第2半導體元件之半導體元件(俯視8 mm×12 mm、厚度100 μm)接著於BGA基板。此時，以俯視下第1半導體元件與第2半導體元件之中心相同之方式、另外以第一半導體元件之長邊側與第二半導體元件之長邊側方向相同之方式進行接著。此時之接著條件設為溫度100℃、壓力25 N(0.26 MPa)、2秒。 進而，將接著有半導體晶片之BGA基板於加壓條件下進行加熱而使接著膜加壓硬化。詳細而言，作為具備加壓室之加壓加熱裝置，使用Chiyoda Electric公司製造之「ASC-450」，以加熱溫度150℃、環境壓力5 kg/cm2 (4.9×10-1 MPa)進行1小時之熱處理，使接著熱硬化而將第2半導體元件固定。藉此，獲得藉由接著膜包埋有控制器晶片、且基板上固定有半導體晶片之半導體裝置。 (空隙/伸出量之評價) 將在接著膜與基板之界面中空隙面積為1%以下之情況評價為「○」，將以超過1%之面積確認到空隙之情況評價為「×」。再者，空隙係使用圖像處理裝置(Hitachi Engineering & Services股份有限公司製造，商品名「FineSAT FS300III」)，自基板側以透射模式拍攝超音波圖像，對所獲得之圖像進行二值化，藉此區分空隙部位及其以外之部位。基於該二值化圖像，求出於包埋半導體元件並且使接著膜與基板完全貼合之情形時之所觀察到之空隙之面積相對於接著膜與基板之接觸面積(半導體晶片面積除外)所占的比率(%)。又，以自控制器晶片固定位置之中心通過之方式，將所製作之半導體裝置以平行於晶片之長邊及短邊之方式切斷，使用光學顯微鏡(200倍)觀察切斷面，測定接著膜之伸出量。將半導體晶片自各邊(共4處)之伸出量均為150 μm以下之情況評價為「○」，只要有1處超過150 μm則評價為「×」。將結果示於下述表1。 [表1] 可知根據具備實施例之接著膜之切晶黏晶膜，可防止接著膜之過度伸出並且空隙亦充分消失，能夠效率良好地生產高品質之半導體裝置。比較例成為無法滿足空隙消失性或伸出防止性之任一者或兩者之結果。[First Embodiment] A first embodiment of an embodiment of the present invention will be described below with reference to the drawings. In addition, in some or all of the drawings, the portions that are unnecessary in the description are omitted, and for the sake of easy explanation, there is a portion that is enlarged or reduced. In the first embodiment, the following is an example in which the dicing film of the adhesive film layer 3 is laminated on the substrate 4 as shown in FIG. Description. In the present embodiment, an aspect in which the connection between the adherend and the first semiconductor element is achieved by wire bonding is described. <Following Film> The film 22 is a layered material having a function as a function of the film, and examples of the constituent material include a thermoplastic resin, a thermosetting resin, and an inorganic filler. (The thermoplastic resin) The content of the thermoplastic resin is 10% by weight or more, preferably 11% by weight or more, and more preferably 12% by weight or more based on the total weight of the thermoplastic resin, the thermosetting resin, and the inorganic filler. On the other hand, the content is 25% by weight or less, preferably 22% by weight or less, more preferably 20% by weight or less. By setting the content of the thermoplastic resin to the above range, it is possible to achieve both void disappearance and stretch prevention. When the content is too small, the protrusion prevention property is lowered, and if it is too large, the void disappearability is lowered. Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, and polybutylene. Diene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon, phenoxy resin, acrylic resin, PET (Polyethylene Terephthalate, polyterephthalic acid) A saturated polyester resin such as ethylene glycol) or PBT (Polybutylene Terephthalate), a polyamidoximine resin or a fluororesin. These thermoplastic resins may be used singly or in combination of two or more. Among these thermoplastic resins, an acrylic resin having less ionic impurities, high heat resistance, and reliability of a semiconductor element is particularly preferable. The acrylic resin is not particularly limited, and one or two of acrylic acid or methacrylic acid ester having a linear or branched alkyl group having a carbon number of 30 or less, particularly a carbon number of 4 to 18, may be mentioned. A polymer or the like as a component. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a tert-butyl group, an isobutyl group, a pentyl group, an isopentyl group, a hexyl group, a heptyl group, and a cyclohexyl group. 2-ethylhexyl, octyl, isooctyl, decyl, isodecyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, ten Octaalkyl, or eicosyl, and the like. Further, the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid or butyl. a carboxyl group-containing monomer such as an enoic acid or the like; an acid anhydride monomer such as maleic anhydride or itaconic anhydride; 2-hydroxyethyl (meth)acrylate; 2-hydroxypropyl (meth)acrylate; 4-hydroxybutyl acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxy decyl (meth) acrylate, 12-hydroxy (meth) acrylate Hydroxy-containing monomer such as lauryl ester or (4-hydroxymethylcyclohexyl)methyl acrylate; styrene sulfonic acid, allyl sulfonic acid, 2-(methyl) acrylamide 2-methylpropane sulfonate a sulfonic acid group-containing monomer such as an acid, (meth) acrylamide, propanesulfonic acid, sulfopropyl (meth) acrylate or (meth) propylene phthaloxy naphthalene sulfonic acid; or 2-hydroxyethyl A phosphate-containing monomer such as acryloyl phosphate. (thermosetting resin) Examples of the thermosetting resin include a phenol resin, an amine resin, an unsaturated polyester resin, an epoxy resin, a polyurethane resin, an anthrone resin, and a thermosetting polyimide resin. These resins may be used singly or in combination of two or more. It is particularly preferable to use an epoxy resin which corrodes a small amount of ionic impurities such as semiconductor elements. Further, as the curing agent for the epoxy resin, a phenol resin is preferred. The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, and hydrogenated bisphenol A type can be used. Bisphenol AF, biphenyl, naphthalene, anthracene, phenol novolac, o-cresol novolac, trishydroxyphenylmethane, tetraphenol ethane, etc. Epoxy resin; or epoxy resin such as carbendazim type, triglycidyl isocyanurate type or glycidylamine type. These may be used alone or in combination of two or more. Among these epoxy resins, a novolak type epoxy resin, a biphenyl type epoxy resin, a trishydroxyphenylmethane type resin or a tetraphenol ethane type epoxy resin is particularly preferable. The reason for this is that these epoxy resins are rich in reactivity with a phenol resin as a curing agent, and are excellent in heat resistance and the like. Further, the phenol resin is a substance which acts as a curing agent for the epoxy resin, and examples thereof include a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a third butyl phenol novolak resin, and a hydrazine. A novolac type phenol resin such as a phenol novolac resin; a polyoxystyrene such as a novolac type phenol resin or polyparaxyl styrene. These may be used alone or in combination of two or more. Among these phenol resins, a phenol novolac resin and a phenol aralkyl resin are particularly preferable. The reason for this is that the connection reliability of the semiconductor device can be improved. The softening point of the thermosetting resin is not particularly limited, but is preferably 80 ° C or lower, more preferably 75 ° C or lower, and still more preferably 70 ° C or lower. By setting the softening point of the thermosetting resin to the above range, the fluidity of the adhesive film at the time of press hardening is improved, and the void can be eliminated at a higher level. The lower limit of the softening point of the thermosetting resin is not particularly limited, and may be a liquid softening point (for example, 10° C. or higher, preferably 15° C. or higher) at normal temperature (25° C.). In the case where the film contains a plurality of thermosetting resins, it is preferred that the softening point of the highest softening point of each of the thermosetting resins is within the above range. A commercially available product can be suitably used as the thermosetting resin having a softening point of 80 ° C or lower. Specific examples of the epoxy resin having a softening point of 80 ° C or less include YL-980 (manufactured by Mitsubishi Chemical Corporation, liquid at normal temperature), 828 (manufactured by Mitsubishi Chemical Corporation, liquid at normal temperature), and 1001 ( Manufactured by Mitsubishi Chemical Corporation, 64°C), 1002 (manufactured by Mitsubishi Chemical Corporation, 78°C), YX7700 (manufactured by Mitsubishi Chemical Corporation, 65°C), EPICLON 1050 (manufactured by DIC Corporation, 62-73°C), EPICLON N-660 (manufactured by DIC Corporation, 61-69 ° C), EPICLON N-665 (manufactured by DIC Corporation, 64-72 ° C), EPICLON N-670 (manufactured by DIC Corporation, 68-76 ° C), EPICLON N- 770 (manufactured by DIC Corporation, 65-75 ° C), EPICLON HP-7200L (manufactured by DIC Corporation, 50-60 ° C), EPICLON HP-7200 (manufactured by DIC Corporation, 57-68 ° C), EPICLON HP -4770 (manufactured by DIC Corporation, 67-77 ° C) or the like (the numerical value in the parentheses is the softening point (catalog value)), but is not particularly limited. Specific examples of the phenol resin having a softening point of 80 ° C or less include H-4 (manufactured by Minghe Chemical Co., Ltd., 67-75 ° C), MEH-7800 4L (manufactured by Minghe Chemical Co., Ltd., 60-63 ° C). ), MEH-7800 SS (manufactured by Minghe Chemical Co., Ltd., 64-69 ° C), MEH-7800 3L (manufactured by Minghe Chemical Co., Ltd., 70-73 ° C), MEH-7800 S (manufactured by Minghe Chemical Co., Ltd., 74-78°C), MEH-7851 SS (manufactured by Minghe Chemical Co., Ltd., 64-69°C), MEH-7851 S (manufactured by Minghe Chemical Co., Ltd., 70-74°C), MEH-7851 M (Minghe Chemicals Co., Ltd.) Co., Ltd., 75-79 ° C), MEH-8000-4L (manufactured by Minghe Chemical Co., Ltd., liquid at room temperature), MEH-8000H (manufactured by Minghe Chemical Co., Ltd., liquid at room temperature), MEH- 8005 (manufactured by Minghe Chemical Co., Ltd., liquid at room temperature), GPNX 70 (Group Rong Chemical Industry, 68-72 ° C), PS 4271 (Group Rong Chemical Industry, 69-73 ° C), etc. (the values in parentheses are Softening point (catalog value), but is not particularly limited. In the case where the epoxy resin and the phenol resin are contained as the thermosetting resin, the ratio of the epoxy resin to the phenol resin is, for example, preferably an epoxy group in the phenol resin relative to the epoxy group in the epoxy resin component. The formulation is carried out in such a manner that the equivalent amount is from 0.5 to 2.0 equivalents. More preferably, it is 0.8 to 1.2 equivalent. In other words, when the blending ratio of the two is out of the above range, a sufficient curing reaction is not performed, and the properties of the cured epoxy resin are likely to deteriorate. Further, in the present embodiment, it is particularly preferable to use an epoxy resin and a phenol resin as a thermosetting resin and an adhesive film containing an acrylic resin as a thermoplastic resin. These resins have low ionic impurities and high heat resistance, so that the reliability of the semiconductor element can be ensured. In this case, the blending ratio is 10 to 700 parts by weight based on 100 parts by weight of the acrylic resin component and the epoxy resin and the phenol resin. (Crosslinking agent) The binder film of the present embodiment can be preliminarily added to a certain degree of cross-linking, and a polyfunctional compound which reacts with a functional group at the end of the molecular chain of the polymer can be added as a crosslinking agent in advance. . Thereby, the adhesion characteristics at a high temperature can be improved, and the heat resistance can be improved. As the above crosslinking agent, a previously known crosslinking agent can be used. More preferably, it is preferably a polyisocyanate compound such as toluene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, or an adduct of a polyhydric alcohol and a diisocyanate. The amount of the crosslinking agent added is usually preferably 0.05 to 7 parts by weight based on 100 parts by weight of the polymer. If the amount of the crosslinking agent is more than 7 parts by weight, the subsequent force is lowered, which is not preferable. On the other hand, if it is less than 0.05 part by weight, the cohesive force is insufficient, which is not preferable. Further, such a polyisocyanate compound and other polyfunctional compounds such as an epoxy resin may be contained together. (Inorganic Filler) The content of the inorganic filler is 30% by weight or more and 50% by weight or less based on the total weight of the thermoplastic resin, the thermosetting resin, and the inorganic filler. The lower limit of the above content is preferably 31% by weight, more preferably 32% by weight, still more preferably 33% by weight, still more preferably 34% by weight, still more preferably 35% by weight. The upper limit of the above content is preferably 49% by weight, more preferably 48% by weight, still more preferably 47% by weight, still more preferably 46% by weight, still more preferably 45% by weight. By setting the content of the inorganic filler to the above range, it is possible to achieve both void disappearance and protrusion prevention. When the content is too small, the protrusion prevention property is lowered, and if it is too large, the void disappearability is lowered. The formulation of the inorganic filler can control the fluidity or viscosity of the adhesive film, impart conductivity, improve thermal conductivity, adjust the modulus of elasticity, and the like. Examples of the inorganic filler include ceramics such as cerium oxide, clay, gypsum, calcium carbonate, barium sulfate, aluminum oxide, cerium oxide, cerium carbide, and cerium nitride, aluminum, copper, silver, gold, and nickel. Metals or alloys such as chromium, tin, zinc, palladium, and solder, and various inorganic powders such as carbon. These may be used alone or in combination of two or more. Among them, cerium oxide, especially molten cerium oxide, can be suitably used. Further, by adding conductive fine particles formed of aluminum, copper, silver, gold, nickel, chromium, tin, zinc or the like to form a conductive adhesive film, generation of static electricity can be suppressed. Further, the average particle diameter of the inorganic filler is preferably in the range of 0.1 to 80 μm. (Thermal hardening catalyst) As a constituent material of the adhesive film, a heat curing catalyst can also be used. The content thereof is preferably 0.01 to 1 part by weight, more preferably 0.05 to 0.5 part by weight, based on 100 parts by weight of the total of the thermoplastic resin, the thermosetting resin, and the inorganic filler. By setting the content to the above lower limit or more, the epoxy groups which are not reacted at the time of die bonding can be polymerized in the subsequent step, and the unreacted epoxy group can be reduced or eliminated. As a result, it is possible to manufacture a semiconductor device in which the semiconductor element is subsequently fixed to the adherend without peeling off. On the other hand, by setting the blending ratio to be equal to or lower than the above upper limit, it is possible to prevent the occurrence of hardening inhibition. The thermosetting catalyst is not particularly limited, and examples thereof include an imidazole compound, a triphenylphosphine compound, an amine compound, a triphenylborane compound, and a trihaloborane compound. These may be used alone or in combination of two or more. Examples of the imidazole-based compound include 2-methylimidazole (trade name: 2MZ), 2-undecylimidazole (trade name: C11Z), and 2-heptadecylimidazole (trade name: C17Z), and , 2-dimethylimidazole (trade name: 1.2DMZ), 2-ethyl-4-methylimidazole (trade name: 2E4MZ), 2-phenylimidazole (trade name: 2PZ), 2-phenyl-4 -methylimidazole (trade name: 2P4MZ), 1-benzyl-2-methylimidazole (trade name: 1B2MZ), 1-benzyl-2-phenylimidazole (trade name: 1B2PZ), 1-cyanoethyl 2-methylimidazole (trade name: 2MZ-CN), 1-cyanoethyl-2-undecylimidazole (trade name: C11Z-CN), 1-cyanoethyl-2-phenyl Imidazolium trimellitate (trade name: 2PZCNS-PW), 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-tetrazine (trade name: 2MZ-A), 2,4-diamino-6-[2'-undecylimidazolyl-(1')]-ethyl-tetradecyl (trade name: C11Z-A), 2,4- Diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-tetradecyl (trade name: 2E4MZ-A), 2,4-diamino-6 -[2'-Methylimidazolyl-(1')]-ethyl-tetra-isoisocyanuric acid adduct (trade name: 2MA-OK), 2-phenyl-4,5-dihydroxymethylimidazole Business Product name: 2PHZ-PW), 2-phenyl-4-methyl-5-hydroxymethylimidazole (trade name: 2P4MHZ-PW), etc. (all manufactured by Shikoku Chemicals Co., Ltd.). The triphenylphosphine-based compound is not particularly limited, and examples thereof include triphenylphosphine, tributylphosphine, tris(p-methylphenyl)phosphine, tris(nonylphenyl)phosphine, and diphenyl. Triorganophosphine such as tolylphosphine, tetraphenylphosphonium bromide (trade name: TPP-PB), methyltriphenylphosphonium (trade name: TPP-MB), methyltriphenylphosphonium chloride (trade name: TPP-MC), methoxymethyltriphenylphosphonium (trade name: TPP-MOC), benzyltriphenylphosphonium chloride (trade name: TPP-ZC), etc. (all manufactured by Beixing Chemical Co., Ltd.) . Further, as the triphenylphosphine-based compound, it is preferred that the epoxy resin exhibits substantially no solubility. If the epoxy resin is insoluble, the thermal hardening can be suppressed from proceeding excessively. The thermosetting catalyst having a triphenylphosphine structure and exhibiting insolubility to the epoxy resin is, for example, methyltriphenylphosphonium (trade name: TPP-MB). In addition, the above-mentioned "non-solubility" means that the thermosetting catalyst containing a triphenylphosphine-based compound is insoluble to a solvent containing an epoxy resin, and more specifically, it is in a range of a temperature of 10 to 40 ° C. Dissolved in 10% by weight or more. The triphenylborane-based compound is not particularly limited, and examples thereof include tris(p-methylphenyl)borane. Further, the triphenylborane-based compound may further contain a compound having a triphenylphosphine structure. The compound having a triphenylphosphine structure and a triphenylborane structure is not particularly limited, and examples thereof include tetraphenylboron tetraphenylphosphonium (trade name: TPP-K) and tetrakis(p-tolylboron). Tetraphenylphosphonium (trade name: TPP-MK), tetraphenylboronyltriphenylphosphonium (trade name: TPP-ZK), triphenylphosphine triphenylborane (trade name: TPP-S) Etc. (all manufactured by Beixing Chemical Co., Ltd.). The above-mentioned amine-based compound is not particularly limited, and examples thereof include monoethanolamine trifluoroborate (manufactured by Stella Chemifa Co., Ltd.), dicyandiamide (manufactured by Nacalai Tesque Co., Ltd.), and the like. The trihalogenated borane-based compound is not particularly limited, and examples thereof include trichloroborane and the like. (Other Additives) Further, in the adhesive film of the present embodiment, in addition to the above inorganic filler, other additives may be appropriately blended as needed. Examples of other additives include a flame retardant, a decane coupling agent, and an ion scavenger. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. These may be used alone or in combination of two or more. Examples of the above decane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, γ-glycidoxypropyltrimethoxydecane, and γ-glycidoxypropyl group. Methyl diethoxy decane, and the like. These compounds may be used singly or in combination of two or more. Examples of the ion trapping agent include aluminum magnesium carbonate and barium hydroxide. These may be used alone or in combination of two or more. The viscosity at 120 ° C before the thermal curing of the adhesive film is 1300 Pa·s or more and 4500 Pa·s or less. The lower limit of the viscosity is preferably 1350 Pa·s, more preferably 1400 Pa·s, still more preferably 1450 Pa·s, and particularly preferably 1500 Pa·s. On the other hand, the upper limit of the viscosity is preferably 4,400 Pa·s, more preferably 4,300 Pa·s, still more preferably 4,200 Pa·s, and particularly preferably 4,000 Pa·s. By setting the viscosity at 120 ° C before the thermal curing of the adhesive film to the above range, it is possible to achieve both void disappearance and stretch prevention. When the viscosity is too low, the protrusion prevention property is lowered, and if it is too high, the void disappearability is lowered. The viscosity at 150 ° C before the thermal curing of the adhesive film is preferably 500 Pa·s or more and 2500 Pa·s or less. The lower limit of the viscosity is more preferably 550 Pa·s, further preferably 600 Pa·s, and particularly preferably 700 Pa·s. On the other hand, the upper limit of the viscosity is more preferably 2400 Pa·s, further preferably 2300 Pa·s, and particularly preferably 2200 Pa·s. By setting the viscosity at 150 ° C before the thermal curing of the adhesive film to the above range, the void disappearance in the press hardening step can be further improved. The layer structure of the film is not particularly limited, and examples thereof include an adhesive film composed of only a single film of the adhesive film, and a film having a multilayer structure in which a film is formed on one surface or both surfaces of the core material. Here, examples of the core material include a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polycarbonate film, etc.), A resin substrate, a ruthenium substrate, or a glass substrate reinforced with a non-woven fiber made of glass fiber or plastic. Further, it can also be used as a one-piece film obtained by integrating an adhesive film and a cut wafer material. (Cut crystal film) As the above-mentioned dicing film, for example, an adhesive layer 3 is laminated on the substrate 4. Next, the film 22 is laminated on the adhesive layer 3. Alternatively, as shown in FIG. 2, only the semiconductor wafer attaching portion 22a (see FIG. 1) may be formed with the adhesive film 22'. (Substrate) The base material 4 is a material which is a strength matrix of the crystal cut crystal films 10 and 10'. For example, low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, homopolypropylene, poly Polyolefin such as butene or polymethylpentene; ethylene-vinyl acetate copolymer, ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (random, alternating) copolymerization Polyesters such as ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate, etc.; polycarbonate, polyimine, polyether ether Ketones, polyimines, polyetherimine, polyamines, wholly aromatic polyamines, polyphenylene sulfides, linalylamines (paper), glass, glass cloth, fluororesin, polyvinyl chloride, polyethylene Vinyl chloride, cellulose resin, fluorenone resin, metal (foil), paper, and the like. In the case where the adhesive layer 3 is of an ultraviolet curing type, the substrate 4 is preferably transparent to ultraviolet rays. Moreover, as a material of the base material 4, a polymer such as a crosslinked body of the above resin may be mentioned. The plastic film may be used in a state of no stretching, and may be subjected to a stretching treatment of a single shaft or a double shaft as needed. According to the resin sheet which is heat-shrinkable by the stretching treatment or the like, the base material 4 is thermally shrunk after the dicing, and the adhesion area between the adhesive layer 3 and the adhesive film 22 is reduced, whereby the semiconductor element can be easily recovered. . In order to improve adhesion to adjacent layers, retention, etc., the surface of the substrate 4 can be subjected to conventional surface treatment such as chromic acid treatment, ozone exposure, flame exposure, high voltage electric shock exposure, ionizing radiation treatment, or the like. The coating treatment is performed by a primer (for example, an adhesive substance described later). The substrate 4 may be appropriately selected from the same or different kinds of substrates, and a plurality of kinds may be used as needed. Moreover, in order to impart antistatic performance to the base material 4, a vapor deposition layer containing a conductive material having a thickness of about 30 to 500 Å, such as a metal, an alloy, or the like, may be provided on the base material 4. The substrate 4 may be a single layer or a composite layer of two or more types. The thickness of the substrate 4 is not particularly limited, and can be appropriately determined, and is usually about 5 to 200 μm. Further, the substrate 4 may contain various additives (for example, a color former, a filler, a plasticizer, an anti-aging agent, an antioxidant, a surfactant, a flame retardant, etc.) within a range not impairing the effects of the present invention and the like. ). (Adhesive Layer) The adhesive for forming the adhesive layer 3 is not particularly limited as long as it can peelably control the adhesive film 3. For example, a usual pressure-sensitive adhesive such as an acrylic adhesive or a rubber-based adhesive can be used. As the pressure-sensitive adhesive, it is preferable to polymerize on the basis of an acrylic polymer in terms of cleaning and cleaning properties of an organic solvent such as a semiconductor wafer or glass which is resistant to contamination, such as ultrapure water or an organic solvent such as an alcohol. Acrylic adhesive for the substance. As the acrylic polymer, a polymer using acrylate as a main monomer component can be mentioned. For example, an alkyl (meth)acrylate which is the above acrylate (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, second butyl ester, and third butyl ester) may be mentioned. Amyl, isoamyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, decyl, decyl, isodecyl, undecyl, dodecyl, ten The alkyl group having a trialkyl ester, a tetradecyl ester, a hexadecyl ester, an octadecyl ester or an eicosyl ester has a carbon number of from 1 to 30, especially a linear chain having a carbon number of from 4 to 18. One or more of a cycloalkyl (meth) acrylate (such as a cyclopentyl ester, a cyclohexyl ester, etc.), or an acrylic polymer used as a monomer component Wait. Further, (meth) acrylate means acrylate and/or methacrylate, and all (meth) of the present invention have the same meaning. In order to achieve the modification of cohesive force, heat resistance and the like, the acrylic polymer may optionally contain a unit corresponding to another monomer component copolymerizable with the above alkyl (meth)acrylate or cycloalkyl ester. Examples of such a monomer component include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. And other carboxyl group-containing monomers; anhydride monomers such as maleic anhydride and itaconic anhydride; 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate , 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, (meth)acrylic acid a hydroxyl group-containing monomer such as (4-hydroxymethylcyclohexyl)methyl ester; styrenesulfonic acid, allylsulfonic acid, 2-(methyl)acrylamido-2-methylpropanesulfonic acid, (methyl) a sulfonic acid group-containing monomer such as acrylamide propyl sulfonic acid, sulfopropyl (meth) acrylate, (meth) propylene phthaloxy naphthalene sulfonic acid, or the like; Body; acrylamide, acrylonitrile, and the like. One or two or more kinds of the monomer components which can be copolymerized can be used. The amount of the monomers which can be copolymerized is preferably 40% by weight or less based on the total of the monomer components. Further, in order to carry out the crosslinking, the acrylic polymer may optionally contain a polyfunctional monomer or the like as a monomer component for copolymerization. Examples of such a polyfunctional monomer include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, and (poly)propylene glycol di(meth)acrylate. Neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(methyl) Acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, (meth) acrylate urethane, and the like. These polyfunctional monomers may be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less based on the total of the monomer components in terms of adhesion characteristics and the like. The above acrylic polymer can be obtained by polymerizing a single monomer or a mixture of two or more kinds of monomers. The polymerization can also be carried out in any manner such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization, or the like. In terms of preventing contamination of the cleaned adherend, etc., it is preferred that the content of the low molecular weight substance is small. In this respect, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, and more preferably about 400,000 to 3,000,000. Further, in the above-mentioned adhesive, in order to increase the number average molecular weight of the acrylic polymer or the like as the base polymer, an external crosslinking agent may be suitably used. Specific examples of the external crosslinking method include a method in which a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound or a melamine-based crosslinking agent is added and reacted. In the case of using an external crosslinking agent, the amount thereof is appropriately determined depending on the balance of the base polymer to be crosslinked and further depending on the use as the adhesive. It is usually preferably 10 parts by weight or less and further 0.1 to 10 parts by weight based on 100 parts by weight of the base polymer. Further, in the adhesive, if necessary, in addition to the above components, additives such as various conventionally known adhesion-imparting agents and anti-aging agents may be used. The adhesive layer 3 can be formed of a radiation hardening type adhesive. The radiation-curable adhesive can increase the degree of crosslinking by irradiating radiation such as ultraviolet rays, so that the adhesion is easily lowered. For example, by irradiating only the portion 3a of the adhesive layer 3 shown in Fig. 2 with radiation, a difference in adhesion to the portion 3b can be set. Moreover, by curing the radiation-curable adhesive layer 3 in accordance with the adhesive film 22', the portion 3a in which the adhesive force is remarkably lowered can be easily formed. Since the adhesive film 22' is attached to the portion 3a which is hardened and has a reduced adhesive force, the interface between the portion 3a and the adhesive film 22' has a property of being easily peeled off at the time of picking up. On the other hand, the portion where the radiation is not irradiated has a sufficient adhesive force to form the portion 3b. As described above, in the adhesive layer 3 of the dicing crystal film 10 shown in Fig. 1, the portion 3b formed of the uncured radiation-curable adhesive adheres to the adhesive film 22, thereby ensuring the crystal cutting time. Retentivity. In this manner, the radiation-curable adhesive can support the adhesion film 22 to fix the semiconductor wafer to the adhesive film 22 of the adherend such as the substrate. In the adhesive layer 3 of the diced crystal film 10' shown in Fig. 2, the above portion 3b can fix the wafer ring. The radiation-curable adhesive is not particularly limited as long as it has a radiation curable functional group such as a carbon-carbon double bond and exhibits adhesiveness. As the radiation-curable adhesive, for example, an addition type radiation hardening in which a radiation curable monomer component or an oligomer component is blended in a usual pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive can be exemplified. Type of adhesive. Examples of the radiation curable monomer component to be blended include a urethane oligomer, a (meth)acrylic acid urethane, a trimethylolpropane tri(meth)acrylate, and a tetrahydroxy group. Methyl methane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxy penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate , 1,4-butanediol di(meth)acrylate, and the like. In addition, examples of the radiation curable oligomer component include various oligomers such as a urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based polymer, and the weight average molecular weight thereof is preferably 100. ~ 30,000 or so range. The amount of the radiation-curable monomer component and the oligomer component can be appropriately determined depending on the type of the pressure-sensitive adhesive layer to reduce the adhesion of the pressure-sensitive adhesive layer. In general, it is, for example, 5 to 500 parts by weight, preferably 40 to 150 parts by weight, per 100 parts by weight of the base polymer such as the acrylic polymer constituting the pressure-sensitive adhesive. Further, as the radiation-curable adhesive, in addition to the above-described additive-type radiation-curable adhesive, a base polymer having a carbon-carbon double bond in a polymer side chain or a main chain or a main chain terminal may be used. An intrinsic type radiation hardening adhesive. The intrinsic type radiation curable adhesive does not need to contain an oligomer component or the like as a low molecular component, or is mostly not contained. Therefore, the oligomer component or the like does not move over the adhesive layer with time, and the layer structure can be stabilized. The adhesive layer is preferred. The base polymer having a carbon-carbon double bond described above can be used without any particular limitation, and has a carbon-carbon double bond and has adhesiveness. As such a base polymer, an acrylic polymer is preferably used as a basic skeleton. The basic skeleton of the acrylic polymer may, for example, be an acrylic polymer exemplified above. The method of introducing the carbon-carbon double bond to the acrylic polymer is not particularly limited, and various methods can be employed. However, it is easy to introduce a molecular structure in which a carbon-carbon double bond is introduced into a polymer side chain. For example, a method of copolymerizing an acrylic polymer with a monomer having a functional group, and then a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond in maintaining a carbon-carbon double bond may be mentioned. The polycondensation or addition reaction is carried out in the state of radiation hardenability. Examples of combinations of such functional groups include a carboxylic acid group, an epoxy group, a carboxylic acid group and an aziridine group, a hydroxyl group and an isocyanate group. In the combination of these functional groups, a combination of a hydroxyl group and an isocyanate group is suitable in terms of easiness of the reaction. Further, if a combination of the above-described acrylic polymer having a carbon-carbon double bond is produced by a combination of the functional groups, the functional group may be located on either side of the acrylic polymer and the above compound, but in the above In a preferred combination, it is preferred that the acrylic polymer has a hydroxyl group and the above compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacrylonitrile isocyanate, 2-methylpropenyloxyethyl isocyanate, and m-isopropenyl-α, α-di Methylbenzyl isocyanate and the like. Further, as the acrylic polymer, an ether compound such as the above-exemplified hydroxyl group-containing monomer, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether or diethylene glycol monovinyl ether can be used. Co-aggregation. The above-mentioned intrinsic radiation curable adhesive may be used alone as the base polymer (especially an acrylic polymer) having a carbon-carbon double bond, or may be prepared by disposing the above-mentioned radiation curable monomer component or oligomerization to such an extent that the properties are deteriorated. Composition. The radiation curable oligomer component or the like is usually in the range of 30 parts by weight, preferably 0 to 10 parts by weight, per 100 parts by weight of the base polymer. The radiation curable adhesive preferably contains a photopolymerization initiator when it is cured by ultraviolet rays or the like. As the photopolymerization initiator, for example, 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)one, α-hydroxy-α,α'-dimethylacetophenone can be exemplified. , an α-keto alcohol compound such as 2-methyl-2-hydroxypropiophenone or 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylbenzene Acetophenone-based compounds such as ketone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)-phenyl]-2-morpholinylpropan-1-one a benzoin ether compound such as benzoin ethyl ether, benzoin isopropyl ether, fennel acetoin methyl ether; a ketal compound such as benzoin dimethyl ketal; an aromatic sulfonium chloride compound such as 2-naphthalene sulfonium chloride; - Photoactive lanthanide compounds such as phenyl-1,2-propanediol-2-(O-ethoxycarbonyl)anthracene; benzophenone, benzamidine benzoic acid, 3,3'-dimethyl-4- Benzophenone-based compound such as methoxybenzophenone; 9-oxopurine 2-chloro 9-oxosulfur [𠮿 2-methyl 9-oxothione 2,4-Dimethyl 9-oxothione Isopropyl 9-oxopurine 2,4-Dichloro 9-oxosulfuron 2,4-Diethyl 9-oxothione 2,4-diisopropyl 9-oxothione 9-oxopurine a compound; camphorquinone; a halogenated ketone; a fluorenylphosphine oxide; a decylphosphonate. The amount of the photopolymerization initiator to be added is, for example, about 0.05 to 20 parts by weight based on 100 parts by weight of the base polymer such as the acrylic polymer constituting the pressure-sensitive adhesive. In the case where the adhesive layer 3 is formed by the radiation-curable adhesive, it is preferable to irradiate one portion of the adhesive layer 3 with radiation so that the adhesive force of the portion 3a < the adhesive force of the portion 3b. In the dicing die-bonding film of FIG. 2, for example, the relationship of the SUS304 plate (#2000 polishing) as the adherend is the adhesion force of the portion 3a to the portion 3b. The method of forming the above-described portion 3a on the above-mentioned adhesive layer 3 is a method in which the radiation-curable adhesive layer 3 is formed on the substrate 4, and the portion 3a is locally irradiated with radiation to be cured. The local radiation irradiation can be performed via a photomask formed with a pattern corresponding to a portion 3b or the like other than the portion 3a of the adhesive layer 3 of the semiconductor wafer attaching portion 22a. Further, a method of curing by spot irradiation with ultraviolet rays or the like can be mentioned. The formation of the radiation-curable adhesive layer 3 can be carried out by transferring the film provided on the separator to the substrate 4. The local radiation hardening can also be performed on the radiation-curable adhesive layer 3 provided on the separator. Further, in the case where the adhesive layer 3 is formed of a radiation-curable adhesive, all or a part of the portion other than the portion 3a corresponding to the semiconductor wafer attaching portion 22a of at least one side of the substrate 4 is used. When the radiation-shielding adhesive layer 3 is formed, the radiation is irradiated to the portion 3a corresponding to the semiconductor wafer attaching portion 22a, and the portion 3a for lowering the adhesive force can be formed. The light-shielding material can be produced by printing or vapor-depositing a material which can be used as a mask on a support film. According to this production method, the crystal cut crystal film 10 of the present invention can be efficiently produced. Further, in the case where the hardening by oxygen is suppressed when the radiation is irradiated, it is preferable to block the oxygen (air) from the surface of the radiation-curable adhesive layer 3 by some means. For example, a method of coating the surface of the pressure-sensitive adhesive layer 3 with a separator and a method of irradiating radiation such as ultraviolet rays in a nitrogen atmosphere may be mentioned. The thickness of the adhesive layer 3 is not particularly limited, and is preferably about 1 to 50 μm from the viewpoint of preventing the wafer cut surface from being damaged or the adhesion of the adhesive layer. It is preferably 2 to 30 μm, more preferably 5 to 25 μm. Further, the adhesive layer 3 may contain various additives (for example, coloring agents, tackifiers, extenders, fillers, adhesion-imparting agents, plasticizers, anti-aging agents) within the range not impairing the effects of the present invention and the like. , antioxidants, surfactants, crosslinkers, etc.). (Method of Producing Film Next) The adhesive film of the present embodiment is produced, for example, as follows. First, an adhesive composition for film formation is formed. The preparation method is not particularly limited. For example, a thermosetting resin, a thermoplastic resin, other additives, and the like described in the section of the film can be placed in a container, dissolved in an organic solvent, and stirred until uniform. It is obtained in the form of a solution of the subsequent composition. The organic solvent is not particularly limited as long as it can uniformly dissolve, knead or disperse the components constituting the adhesive film, and a conventionally known solvent can be used. Examples of such a solvent include ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, and cyclohexanone, toluene, and Toluene, etc. Methyl ethyl ketone, cyclohexanone or the like is preferably used in terms of a fast drying speed and a low cost. After the coating composition solution prepared as described above is applied to the separator at a specific thickness to form a coating film, the coating film is dried under specific conditions. As the separator, polyethylene terephthalate (PET), polyethylene, polypropylene, or a plastic film surface-coated with a release agent such as a fluorine-based release agent or an acrylic long-chain alkyl ester release agent can be used. Or paper, etc. Further, the coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. Also, as a drying condition. For example, it can be carried out at a drying temperature of 70 to 160 ° C and a drying time of 1 to 5 minutes. Thereby, the adhesive film of this embodiment can be obtained. (Manufacturing Method of Cleaved Muscle Film) The dicing film 10, 10' can be produced, for example, by separately preparing a dicing film and a bonding film in advance, and finally bonding them together. Specifically, it can be produced by the following procedure. First, the substrate 4 can be formed into a film by a conventionally known film forming method. Examples of the film forming method include a calender film forming method, a casting method in an organic solvent, an inflation extrusion method in a sealed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method. Then, an adhesive composition for forming an adhesive layer is prepared. A resin, an additive, and the like described in the adhesive layer are formulated in the adhesive composition. After the prepared adhesive composition is applied onto the substrate 4 to form a coating film, the coating film is dried under specific conditions (heat-crosslinking if necessary) to form the adhesive layer 3. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. Further, the drying conditions are carried out, for example, at a drying temperature of 80 to 150 ° C and a drying time of 0.5 to 5 minutes. Further, after the adhesive composition is applied onto the separator to form a coating film, the coating film is dried under the above drying conditions to form the adhesive layer 3. Thereafter, the adhesive layer 3 is attached to the substrate 4 together with the separator. Thereby, a dicing film including the substrate 4 and the adhesive layer 3 can be produced. Then, the separator is peeled off from the dicing film so that the adhesive film and the pressure-sensitive adhesive layer are bonded to each other. The bonding can be performed, for example, by crimping. In this case, the laminating temperature is not particularly limited, and is, for example, preferably 30 to 70 ° C, more preferably 40 to 60 ° C. Further, the linear pressure is not particularly limited, and is, for example, preferably 0.1 to 20 kgf/cm, more preferably 1 to 10 kgf/cm. Next, the separator on the film was peeled off to obtain a diced crystal film of the present embodiment. (Manufacturing Method of Semiconductor Device) In the method of manufacturing a semiconductor device according to the present embodiment, the adherend to which at least one first semiconductor element is mounted (fixed) is prepared in advance via the first fixing step and the first wire bonding step ( In the bonded body preparation step, the first semiconductor element is embedded in the first semiconductor element by the dicing and pick-up film, and the second semiconductor element different from the first semiconductor element is fixed to the Follow the body. 3A to 3H are each a cross-sectional view schematically showing one step of a method of manufacturing a semiconductor device according to an embodiment of the present invention. (First Fixing Step) As shown in FIG. 3A, at least one first semiconductor element 11 is fixed to the adherend 1 in the first fixing step. The first semiconductor element 11 is fixed to the adherend 1 via the first adhesive film 21 . In FIG. 3A, only one of the first semiconductor elements 11 is shown. However, two, three, four, or five or more plural first semiconductor elements 11 may be fixed to each other according to the specifications of the target semiconductor device. The body 1 is attached. (First semiconductor element) The first semiconductor element 11 is not particularly limited as long as it has a planar size smaller than that of the semiconductor element (the second semiconductor element 12; see FIG. 3F) laminated on the second layer. For example, it can be suitably used. A controller or a memory chip, a logic chip, which is one of semiconductor elements is used. The controller controls the operation of each of the stacked semiconductor elements, so that a plurality of wires are usually connected. The communication speed of the semiconductor package is affected by the length of the wire. However, in the present embodiment, since the first semiconductor element 11 is fixed to the object to be bonded 1 and is located at the lowermost layer, the length of the wire can be shortened, and thus the number of layers of the semiconductor element can be increased. It is also possible to suppress a decrease in the communication speed of the semiconductor package (semiconductor device). The thickness of the first semiconductor element 11 is not particularly limited, but is usually 100 μm or less in many cases. Moreover, with the thinning of the semiconductor package in recent years, the first semiconductor element 11 of 75 μm or less and further 50 μm or less is gradually used. (Battery to be bonded) Examples of the adherend 1 include a substrate, a lead frame, and other semiconductor elements. As the substrate, a conventionally known substrate such as a printed wiring board can be used. Further, as the lead frame, a metal lead frame such as a Cu lead frame or a 42 alloy lead frame or an organic substrate including a glass epoxy resin, BT (Bismaleimide-Triazine), or polyimine may be used. . However, the present embodiment is not limited thereto, and includes a circuit board that can be mounted with a semiconductor element and electrically connected to the semiconductor element. (First Adhesive Film) As the first adhesive film 21, the above-mentioned embedding adhesive film can be used, and a conventionally known adhesive film for fixing a semiconductor element can be used. In the case where the adhesive film for embedding is used, the first adhesive film 21 does not need to be embedded in the semiconductor element. Therefore, the thickness may be as small as about 5 μm to 60 μm. (Fixing Method) As shown in FIG. 3A, the first semiconductor element 11 is bonded to the adherend 1 via the first adhesive film 21. As a method of fixing the first semiconductor element 11 to the adherend 1, for example, a method in which the first adhesive film 21 is laminated on the adherend 1 and the wire bonding surface is the upper side is used in the first Next, the first semiconductor element 11 is laminated on the film 21. Moreover, the first semiconductor element 11 to which the first adhesive film 21 is attached in advance may be placed on the adherend 1 to be laminated. Since the first adhesive film 21 is in a semi-hardened state, the first adhesive film 21 is placed on the adherend 1 and then subjected to heat treatment under specific conditions to thermally cure the first adhesive film 21 to form the first semiconductor element 11 . It is fixed to the adherend 1 . The temperature at the time of heat treatment is preferably from 100 to 200 ° C, more preferably from 120 ° to 180 ° C. Further, the heat treatment time is preferably carried out at 0.25 to 10 hours, more preferably at 0.5 to 8 hours. (First Wire Bonding Step) The first wire bonding step electrically connects the front end of the terminal portion (for example, the inner lead) of the adherend 1 and the electrode pad (not shown) on the first semiconductor element 11 by the bonding wire 31. The step of connecting (refer to Figure 3B). As the bonding wire 31, for example, a gold wire, a silver wire, an aluminum wire, a copper wire, or the like can be used. The temperature at the time of wire bonding can be carried out at 80 to 250 ° C, preferably 80 to 220 ° C. Moreover, the heating time is performed in several seconds to several minutes. The wiring can be carried out by using a combination of the vibration energy of the ultrasonic wave and the pressure bonding force by applying pressure while being heated to the above temperature range. (Wafer Bonding Step) Further, as shown in FIG. 3C, the semiconductor wafer 2 is pressure-bonded to the embedding adhesive film 22 in the dicing die film 10, and is held and fixed (attachment step). . This step is performed while pressing with a pressing mechanism such as a pressure roller. (Cutting Step) Next, as shown in FIG. 3D, the semiconductor wafer 2 is cut. Thereby, the semiconductor wafer 2 is cut into a specific size and singulated, and the semiconductor wafer 12 is manufactured (the dicing step). The dicing can be performed, for example, from the circuit surface side of the semiconductor wafer 2 in accordance with a conventional method. Further, in this step, for example, a cutting method called a full cut which is cut into the crystal cutting film 5 or the like can be employed. The crystal cutting device used in this step is not particularly limited, and those known in the prior art can be used. Further, since the semiconductor wafer is subsequently fixed by the dicing die-bonding film 10, wafer defects or wafer scattering can be suppressed, and damage of the semiconductor wafer 2 can be suppressed. Moreover, since the adhesive film 22 for embedding is used, it is possible to prevent the subsequent dicing, and the subsequent pick-up step can be performed satisfactorily. (Pickup Step) As shown in FIG. 3E, in order to peel off the semiconductor element 12 which is subsequently fixed to the crystal cut film 10, the embedding film 22 is picked up together with the semiconductor element 12 (pickup step). The method of picking up is not particularly limited, and various methods known in the prior art can be employed. For example, a method in which the respective semiconductor wafers 12 are lifted up from the substrate 4 side by a needle, and the semiconductor wafer 12 to be lifted up by the pick-up device is picked up. Here, in the case where the adhesive layer 3 is of an ultraviolet curing type, the pickup is performed by irradiating the adhesive layer 3 with ultraviolet rays. Thereby, the adhesive force of the adhesive layer 3 to the adhesive film 22 is lowered, and peeling of the semiconductor element 12 becomes easy. As a result, pickup can be performed without loss of the semiconductor element. The conditions such as the irradiation intensity and the irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be appropriately set as necessary. Further, as a light source for ultraviolet irradiation, a high pressure mercury lamp, a microwave excitation type lamp, a chemical lamp or the like can be used. (Second fixing step) In the second fixing step, the first semiconductor element 11 additionally fixed to the adherend 1 is embedded by the embedding adhesive film 22 picked up together with the second semiconductor element 12 and The second semiconductor element 12 different in the first semiconductor element 11 is fixed to the object to be bonded 1 (see FIG. 3F). The embedding film 22 has a thickness T larger than that of the first semiconductor element 11 described above. 1 Thicker thickness T. In the present embodiment, the electrical connection between the adherend 1 and the first semiconductor element 11 is achieved by wire bonding, and thus the thickness T and the thickness T are 1 The difference is preferably 40 μm or more and 260 μm or less. The above thickness T and the above thickness T 1 The lower limit of the difference is preferably 40 μm or more, more preferably 50 μm or more, and still more preferably 60 μm or more. Further, the thickness T and the thickness T described above 1 The upper limit of the difference is preferably 260 μm or less, more preferably 200 μm or less, and still more preferably 150 μm or less. With this, it is possible to reduce the thickness of the entire semiconductor device and prevent the first semiconductor element 11 from coming into contact with the second semiconductor element 12, and to embed the entire first semiconductor element 11 in the interior of the embedding film 22, It is possible to fix the first semiconductor element 11 as a controller to the adherend 1 (that is, to fix the lowermost layer of the wire length). The thickness T of the adhesive underlayer film 22 is such that the thickness of the first semiconductor element 11 can be considered and the thickness T of the first semiconductor element 11 can be considered. 1 The wire extension amount may be appropriately set, and the lower limit thereof is preferably 80 μm or more, more preferably 100 μm or more, and still more preferably 120 μm or more. On the other hand, the upper limit of the thickness T is preferably 300 μm or less, more preferably 200 μm or less, still more preferably 150 μm or less. By making the adhesive film thicker in this manner, the thickness of the normal controller can be substantially covered, and the embedding of the first semiconductor element 11 in the embedding film 22 can be easily performed. (Second Semiconductor Element) The second semiconductor element 12 is not particularly limited. For example, a memory chip that is controlled by the operation of the first semiconductor element 11 as a controller can be used. (Fixed method) As a method of fixing the second semiconductor element 12 to the object to be bonded 1, as in the case of the first fixing step, for example, after the adhesive film 22 for lamination is laminated on the adherend 1, The second semiconductor element 12 is laminated on the embedding film 22 so that the wire bonding surface is on the upper side. Moreover, the second semiconductor element 12 to which the embedding adhesive film 22 is applied in advance may be placed on the adherend 1 to be laminated. In order to facilitate entry and embedding of the first semiconductor element 11 in the embedding film 22, the embedding film 22 can be heat-treated at the time of die bonding. The heating temperature is preferably a temperature at which the adhesive film 22 is softened and is not completely thermally cured, and is preferably 80° C. or higher and 150° C. or lower, more preferably 100° C. or higher and 130° C. or lower. At this time, it is also possible to pressurize at 0.1 MPa or more and 1.0 MPa or less. (Pressure-hardening step) Since the embedding adhesive film 22 is in a semi-hardened state, the embedding adhesive film 22 is placed on the adherend 1 and then subjected to heat treatment under pressure to embed the film. The second semiconductor element 12 is fixed to the adherend 1 by thermal curing with the adhesive film 22. The method of heating under pressure is, for example, a method in which the adherend 1 on which the embedding film 22 for embedding is placed is placed in a pressurized chamber filled with an inert gas and heated. The pressure in a pressurized environment is preferably 1 kg/cm 2 (9.8×10 -2 Above MPa), more preferably 2 kg/cm 2 (1.96×10 -1 MPa) or more, and further preferably 3 kg/cm 2 (2.94×10 -1 MPa) or more. If it is 1 kg/cm 2 As described above, the void at the interface between the adhesive film 22 and the adherend 1 can be easily eliminated. Furthermore, the higher the upper limit of the pressure, the better. Although 10 kg/cm in terms of the usual setting limit of the device 2 (9.8×10 -1 It is about MPa), but it can be higher than this value as long as it is technically achievable. The heating temperature at the time of heating under pressure is preferably 100 ° C or more, more preferably 110 ° C or more, further preferably 120 ° C or more, and particularly preferably 140 ° C or more. When it is 100 ° C or more, the embedding film 22 can be made to have a moderate hardness, and the voids can be effectively eliminated by press hardening. The heating temperature is preferably 220 ° C or lower, more preferably 200 ° C or lower, and still more preferably 180 ° C or lower. When it is 220 ° C or less, the rapid expansion of the void can be suppressed. The heating time is preferably 0.1 hour or longer, more preferably 0.2 hour or longer, and still more preferably 0.5 hour or longer. If it is 0.1 hour or more, the effect of pressurization can be fully obtained. The heating time is preferably 10 hours or shorter, more preferably 3 hours or shorter, and still more preferably 1 hour or shorter. At this time, the shearing adhesion force of the embedding film 22 for thermal embedding with respect to the adherend 1 is preferably 0.1 MPa or more, more preferably 0.2 to 10 MPa at 25 to 250 °C. When the shearing force of the embedding film 22 is set to 0.1 MPa or more, the film 24 and the embedding film for embedding due to ultrasonic vibration or heating in the wire bonding step of the second semiconductor element 12 can be suppressed. 2 The semiconductor element 12 or the bonding surface of the bonding body 1 is subjected to shear deformation. In other words, it is possible to prevent the second semiconductor element 12 from moving due to ultrasonic vibration during wire bonding, thereby preventing a decrease in the success rate of wire bonding. (Third Fixing Step) In the third fixing step, the third semiconductor element 13 of the same or different type as the second semiconductor element is fixed to the second semiconductor element 12 (see FIG. 3G). The third semiconductor element 13 is fixed to the second semiconductor element 12 via the third bonding film 23 . (Third Semiconductor Element) The third semiconductor element 13 may be a memory wafer of the same kind as the second semiconductor element 12 or a memory wafer of a different type from the second semiconductor element 12. The thickness of the third semiconductor element 13 can also be appropriately set according to the specifications of the target semiconductor device. (Third Next Film) As the third adhesive film 23, the same as the first adhesive film 21 in the first fixing step can be suitably used. When the embedding adhesive film 22 is used as the third adhesive film 23, since it is not necessary to embed other semiconductor elements, the thickness may be reduced to about 5 μm to 60 μm. (Fixing Method) As shown in FIG. 3G, the third semiconductor element 13 is bonded to the second semiconductor element 12 via the third bonding film 23. As a method of fixing the third semiconductor element 13 to the second semiconductor element 12, for example, after the third bonding film 23 is laminated on the second semiconductor element 12, the wire bonding surface is placed on the upper side. The third semiconductor element 13 is laminated on the third bonding film 23. Further, the third semiconductor element 13 to which the third adhesive film 23 is attached in advance may be placed on the second semiconductor element 12 to be laminated. In order to realize the wire bonding between the second semiconductor element 12 and the third semiconductor element 13 described below, the third semiconductor element is placed so as to avoid the electrode pad of the wire bonding surface (upper surface) of the second semiconductor element 12 13 is fixed to the second semiconductor element 12 by being shifted and fixed. In this case, when the third adhesive film 23 is attached to the upper surface of the second semiconductor element 12 in advance, the third adhesive film 23 protrudes from the upper surface of the second semiconductor element 12 (so-called overhang portion). When it is bent and adhered to the side surface of the second semiconductor element 12 or the side surface of the buried adhesive film 22, there is an unforeseen problem. Therefore, in the third fixing step, it is preferable that the third bonding film 23 is attached to the third semiconductor element 13 in advance, and is placed on the second semiconductor element 12 to be laminated. Since the third adhesive film 23 is also in a semi-hardened state, the third adhesive film 23 is placed on the second semiconductor element 12, and then heat treatment under specific conditions is performed, whereby the third adhesive film 23 is thermally cured, and the third adhesive film 23 is thermally cured. The semiconductor element 13 is fixed to the second semiconductor element 12. Further, in consideration of the elastic modulus or process efficiency of the third adhesive film 23, the third semiconductor element 13 may be fixed without heat treatment. The temperature at the time of heat treatment is preferably from 100 to 200 ° C, more preferably from 120 ° C to 180 ° C. Further, the heat treatment time is preferably carried out at 0.25 to 10 hours, more preferably at 0.5 to 8 hours. (Second Wire Bonding Step) The second wire bonding step electrically connects the electrode pads (not shown) on the second semiconductor element 12 and the electrode pads (not shown) on the third semiconductor element 13 by the bonding wires 32. The step of connecting (refer to Figure 3H). The material of the wire or the wire bonding condition can be suitably the same as the first wire bonding step. (Semiconductor Device) By the above steps, the semiconductor device 100 in which three semiconductor elements are stacked in a plurality of layers via a specific bonding film can be manufactured. Further, by repeating the same steps as the third fixing step and the second wire bonding step, a semiconductor device in which four or more semiconductor elements are laminated can be manufactured. (Sealing Step) After laminating a required number of semiconductor elements, a sealing step of resin-sealing the entire semiconductor device 100 may be performed. The sealing step is a step (not shown) of sealing the semiconductor device 100 with a sealing resin. This step is performed to protect the semiconductor element or bonding wire mounted on the adherend 1 . This step is performed, for example, by molding a resin for encapsulation using a mold. As the sealing resin, for example, an epoxy resin is used. The heating temperature at the time of resin sealing is usually 60 to 90 seconds at 175 ° C. However, the present embodiment is not limited thereto, and for example, it may be cured at 165 to 185 ° C for several minutes. Further, in this step, the resin may be pressurized at the time of sealing. At this time, the pressure of the pressurization is preferably from 1 to 15 MPa, more preferably from 3 to 10 MPa. (Post-hardening step) In the present embodiment, the hardening step after post-curing the sealing resin may be performed after the sealing step. In this step, the sealing resin which is insufficiently hardened in the sealing step described above is completely cured. The heating temperature in this step varies depending on the type of the sealing resin, and is, for example, in the range of 165 to 185 ° C, and the heating time is about 0.5 to 8 hours. The semiconductor package can be fabricated by a sealing step or a post-hardening step. [Second Embodiment] In the first embodiment, the first semiconductor element is fixed to the object to be bonded by the bonding film, and the electrical connection between the first semiconductor element is performed by wire bonding. However, in the second embodiment, The fixing and electrical connection between the two are performed by using a flip chip connection provided on the bump electrodes of the first semiconductor element. Therefore, in the second embodiment, only the fixing method in the first fixing step is different from that in the first embodiment. Therefore, the differences will be mainly described below. (First Fixing Step) In the first fixing step, the first semiconductor element 41 is fixed to the adherend 1 by flip chip connection (see FIG. 4A). In the flip chip connection, the circuit surface of the first semiconductor element 41 is mounted facing the object to be bonded 1 so as to face downward. The first semiconductor element 41 is provided with a plurality of bump electrodes 43 such as bumps, and the bump electrodes 43 are connected to electrodes (not shown) on the adherend 1. Further, between the adherend 1 and the first semiconductor element 41, the underfill material 44 is filled in order to relax the difference in thermal expansion coefficient between the two and to protect the space between the two. The connection method is not particularly limited, and it can be connected by a conventionally known flip chip bonding machine. For example, it is ensured that the protruding electrode 43 such as the bump formed on the first semiconductor element 41 is brought into contact with and pressed by the bonding conductive material (solder or the like) which is applied to the connection pad of the adherend 1 and the conductive material is melted. The first semiconductor element 41 is electrically connected to the adherend 1, and the first semiconductor element 41 can be fixed to the adherend 1 (clad bonded). Usually, the heating conditions at the time of flip chip bonding are 240 to 300 ° C, and the pressurization conditions are 0.5 to 490 N. The material for forming the bump as the bump electrode 43 is not particularly limited, and examples thereof include a tin-lead metal material, a tin-silver metal material, a tin-silver-copper metal material, and a tin-zinc metal material. Solder (alloy) such as tin-zinc-bismuth metal material, gold-based metal material, or copper-based metal material. As the underfill material 44, a previously known liquid or film-shaped underfill material can be used. (Second fixing step) In the second fixing step, the first semiconductor element 41 is embedded by the embedding adhesive film 22 and the second semiconductor different from the first semiconductor element 41 is formed in the same manner as in the first embodiment. The element 12 is fixed to the above-mentioned adherend 1 (refer to FIG. 4B). The conditions in this step are the same as those in the second fixing step in the first embodiment. The embedding film 22 has a thickness T larger than that of the first semiconductor element 41 described above. 1 Thicker thickness T. In the present embodiment, the adherend 1 and the first semiconductor element 41 are connected by a crystal, so the thickness T and the thickness T are 1 The difference is preferably 10 μm or more and 200 μm or less. The above thickness T and the above thickness T 1 The lower limit of the difference is preferably 10 μm or more, more preferably 20 μm or more, and still more preferably 30 μm or more. Further, the thickness T and the thickness T described above 1 The upper limit of the difference is preferably 200 μm or less, more preferably 150 μm or less, and still more preferably 100 μm or less. With such a configuration, the entire semiconductor device can be made thinner, and the first semiconductor element 41 can be prevented from coming into contact with the second semiconductor element 12, and the first semiconductor element 41 can be entirely embedded in the embedding film 22. Internally, it is possible to fix the first semiconductor element 41 as a controller to the adherend 1 (that is, to fix the lowermost layer of the communication path length). The thickness T of the buried adhesive film 22 is considered to be the thickness T of the first semiconductor element 41 so that the first semiconductor element 41 can be embedded. 1 The height of the bump electrode may be appropriately set, and the lower limit thereof is preferably 50 μm or more, more preferably 60 μm or more, and still more preferably 70 μm or more. On the other hand, the upper limit of the thickness T is preferably 250 μm or less, more preferably 200 μm or less, still more preferably 150 μm or less. By making the embedding adhesive film 22 relatively thick as described above, the thickness of the normal controller can be substantially covered, and the embedding of the first semiconductor element 41 in the embedding film 22 can be easily performed. (heat-hardening step) Since the adhesive film 22 is in a semi-hardened state, the adhesive film 22 is placed on the adhesive body 1 and then subjected to heat treatment under pressure, whereby the adhesive film 22 is used for embedding. The glass is thermally cured to terminate the fixing of the second semiconductor element 12 on the adherend 1 . The respective conditions in the heat curing step are the same as those in the first embodiment. Then, in the same manner as in the first embodiment, the third fixing step (see FIG. 4C) of the third semiconductor element 13 of the same or different type as the second semiconductor element 12 is fixed to the second semiconductor element 12, and The second wire bonding step (see FIG. 4D) in which the bonding wire 32 electrically connects the second semiconductor element 12 and the third semiconductor element 13 can be fabricated in a layered controller in the lowermost layer, and a plurality of layers are stacked thereon. A semiconductor device 200 of a semiconductor element. (Other Embodiments) In the first embodiment, the second semiconductor element 12 is produced through a dicing step and a picking step using a diced die film. Further, the first semiconductor element 11 can also be produced by using a diced die-bonding film in the same manner. In this case, the semiconductor wafer for cutting out the first semiconductor element 11 is separately prepared, and then the first semiconductor element 11 is fixed to the object to be bonded 1 via the wafer bonding step, the dicing step, and the pickup step. The third semiconductor element 13 and the semiconductor element laminated on the upper layer can also be fabricated in the same manner. When the semiconductor element is three-dimensionally mounted on the substrate, a buffer coating film may be formed on the side of the semiconductor element on which the circuit is formed. Examples of the buffer coating film include a tantalum nitride film or a heat resistant resin such as a polyimide resin. In each of the embodiments, the wire bonding step is performed every time the semiconductor element after the second semiconductor element is laminated. However, the wire bonding step may be performed once after stacking the plurality of semiconductor elements. Further, since the first semiconductor element is buried in the adhesive film for embedding, it cannot be used as a target for primary wire bonding. The aspect of the flip chip connection is not limited to the connection using the bumps as the bump electrodes described in the second embodiment, and the bumps and the conductivity may be used by the connection by the conductive adhesive composition. The combination of the protrusion structure of the composition of the agent composition, and the like. Further, in the present invention, as long as the circuit surface of the first semiconductor element and the surface of the substrate to be bonded are mounted face down, even if the connection modes of the bump electrode or the bump structure are different, they are referred to as flip chip connections. As the conductive adhesive composition, a conventionally known conductive paste obtained by mixing a conductive filler such as gold, silver or copper with a thermosetting resin such as an epoxy resin can be used. In the case of using the conductive adhesive composition, after the first semiconductor element is mounted on the object to be bonded, the first semiconductor element can be fixed by heat-hardening treatment at about 80 to 150 ° C for about 0.5 to 10 hours. [Examples] Hereinafter, preferred embodiments of the present invention will be exemplarily described in detail. However, the materials, the blending amounts, and the like described in the examples are not intended to limit the scope of the invention, and are merely illustrative examples, unless otherwise specified. [Examples 1 to 5 and Comparative Examples 1 to 6] (Preparation of the film) The acrylic resin as a thermoplastic resin, the epoxy resin and the phenol resin as a thermosetting resin, and the phenol resin were prepared at a ratio shown in Table 1. The cerium oxide filler as an inorganic filler is prepared by dissolving and dissolving the thermosetting catalyst in an amount of 0.1 part by weight based on 100 parts by weight of the total of the thermoplastic resin, the thermosetting resin, and the inorganic filler. A solution of an adhesive composition having a concentration of 40 to 50% by weight is prepared. Further, the details of the abbreviations and components in Table 1 below are as follows. Thermoplastic resin: manufactured by Nagase ChemteX Corporation, acrylic resin "SG-70L" Epoxy resin: manufactured by Mitsubishi Chemical Corporation, "YL-980" (liquid) epoxy resin: manufactured by DIC Corporation, "N-660" (softening point) : 66 ° C) Phenolic resin: manufactured by Minghe Chemical Co., Ltd., "MEH-7851SS" (softening point: 67 ° C) Phenol resin: manufactured by Minghe Chemical Co., Ltd., "MEH-7800H" (softening point: 87 ° C) inorganic filling Agent: manufactured by Admatechs Co., Ltd., cerium oxide filler "SE-2050MC" thermosetting catalyst: manufactured by Beixing Chemical Co., Ltd., "TPP-K" This solution of the adhesive composition is applied to the ketone as a release liner. The release treatment was carried out on a release-treated film containing a polyethylene terephthalate film having a thickness of 50 μm, and then dried at 130 ° C for 2 minutes to prepare an adhesive coating film having a thickness of 40 μm. Further, the three adhesive film coating films produced were bonded together under the following lamination conditions to prepare a film having a thickness of 120 μm. <Laminating conditions> Laminating device: Roller laminator laminating speed: 10 mm/min Laminating pressure: 0.15 MPa Lamination temperature: 60 ° C (measurement of viscosity) For the heat hardening produced in each of the examples and the comparative examples For each of the preceding films, the viscosity at 120 ° C and 150 ° C was measured. That is, the measurement was performed by a parallel plate method using a rheometer (manufactured by HAAKE Co., Ltd., MARS). A 0.1 g sample was taken from the adhesive film produced in each of the examples or the comparative examples, and this was added to a plate which was previously heated at 120 °C. Next, the value after 300 seconds from the start of the measurement was taken as the melt viscosity. The gap between the plates is set to 0.1 mm. The viscosity at 150 ° C was measured in the same manner except that the heating temperature was 150 ° C. The results are shown in Table 1 below. (Production of a diced film) A polyethylene terephthalate film (PET film) having a thickness of 50 μm was prepared as a substrate. 86.4 parts of 2-ethylhexyl acrylate (hereinafter also referred to as "2EHA") and 2-hydroxyethyl acrylate (hereinafter also referred to as "HEA") were added to a reaction vessel equipped with a condenser, a nitrogen gas introduction tube, a thermometer, and a stirring device. 13.6 parts, 0.2 parts of benzamidine peroxide and 65 parts of toluene were subjected to polymerization treatment at 61 ° C for 6 hours in a nitrogen gas stream to obtain an acrylic polymer A. To the acrylic polymer A, 14.6 parts of 2-methylpropenyloxyethyl isocyanate (hereinafter also referred to as "MOI") was added, and an addition reaction was carried out at 50 ° C for 48 hours in an air stream to obtain an addition reaction treatment. Acrylic polymer A'. Next, 8 parts of a polyisocyanate compound (trade name "CORONATE L", manufactured by Nippon Polyurethane Co., Ltd.) and a photopolymerization initiator (trade name "IRGACURE 651", Ciba Specialty Chemicals) were added to 100 parts of the acrylic polymer A'. The company made 5 parts to obtain a solution of the adhesive composition. The obtained adhesive composition solution was applied onto the above-prepared substrate prepared and dried to form an adhesive layer having a thickness of 30 μm, whereby a diced film was obtained. (Production of Cleaved Crystal Film) The adhesive films produced in the respective Examples and Comparative Examples were transferred onto the adhesive layer of the above-mentioned dicing film to obtain a diced crystal film. Further, the conditions for lamination are as follows. <Lamination conditions> Laminating device: Roller laminator laminating speed: 10 mm/min Laminating pressure: 0.15 MPa Lamination temperature: 40 ° C (fixing of the first semiconductor element) The thickness of Example 1 was made at a thickness of 10 μm. The adhesive film of the composition is used as an adhesive film for a semiconductor wafer (controller wafer). This was attached to a semiconductor wafer of 4 mm × 6 mm and a thickness of 30 μm in a plan view at a temperature of 40 °C. Further, the semiconductor element is attached to the BGA substrate via the bonding film. The conditions at this time were set to a temperature of 120 ° C, a pressure of 0.1 MPa, and 1 second. Further, the BGA substrate followed by the controller wafer was heat-treated at 130 ° C for 4 hours to thermally cure the adhesive film. Thereby the controller mounting substrate is obtained. (Fixation of the second semiconductor element) Using the above-described diced die-bonding film, the semiconductor wafer was actually diced according to the following points, and then the semiconductor device was fabricated by picking up the semiconductor wafer, and the pick-up performance and embedding at this time were evaluated. Fixed. The dicing die-bonding films of the examples and the comparative examples were bonded to the semiconductor wafer with the adhesive film as a bonding surface. <Adhesion conditions> Laminating device: Roller laminator laminating speed: 10 mm/min Laminating pressure: 0.15 MPa Laminating temperature: 70° C After bonding, dicing was carried out under the following conditions. Further, in the case of dicing, full cutting was performed so as to be a wafer size of 8 mm × 12 mm. <Cutting conditions> Crystal cutting device: The product name "DFD-6361" is manufactured by DISCO Corporation: "2-8-1" (manufactured by DISCO). Crystal cutting speed: 30 mm/sec. Crystal cutting knife: Z1: DISCO "203O-SE 27HCDD" manufactured by ZSCO: "203O-SE 27HCBB" dicing knife revolutions manufactured by DISCO: Z1: 40,000 rpm Z2: 45,000 rpm Cutting method: Step-cut wafer size: 8 mm × 12 mm The adhesive layer is cured by irradiating ultraviolet rays from the substrate side. In the case of ultraviolet irradiation, an ultraviolet irradiation device (product name: UM810, manufacturer: manufactured by Nitto Seiki Co., Ltd.) is used, and the amount of ultraviolet radiation is set to 400 mJ/cm. 2 . Then, a laminate of the adhesive film and the semiconductor wafer is picked up from the substrate side of each of the dicing films by the ejector. The pickup conditions are as follows. <Picking conditions> Bonding device: manufactured by Shinkawa Co., Ltd., device name: number of SPA-300 needles: 9 needle tops: 400 μm (0.40 mm) Needle jacking speed: 5 mm/sec adsorption holding time : 1000 ms Then, the controller chip of the controller mounting substrate is embedded by the adhesive film of the laminated body picked up, and the semiconductor element as the second semiconductor element (top view 8 mm × 12 mm, thickness 100 μm) is continued On the BGA substrate. In this case, the first semiconductor element is formed in the same manner as the center of the second semiconductor element in plan view, and the long side of the first semiconductor element is connected in the same direction as the long side of the second semiconductor element. The subsequent conditions at this time were set to a temperature of 100 ° C, a pressure of 25 N (0.26 MPa), and 2 seconds. Further, the BGA substrate with the semiconductor wafer next is heated under pressure to pressurize the adhesive film. Specifically, as a pressurization heating device equipped with a pressurizing chamber, "ASC-450" manufactured by Chiyoda Electric Co., Ltd. was used, with a heating temperature of 150 ° C and an ambient pressure of 5 kg / cm. 2 (4.9×10 -1 MPa) The heat treatment was performed for 1 hour, and then the second semiconductor element was fixed by thermal hardening. Thereby, a semiconductor device in which a controller wafer is embedded in a film and a semiconductor wafer is fixed on the substrate is obtained. (Evaluation of the gap/extension amount) The case where the void area was 1% or less at the interface between the film and the substrate was evaluated as "○", and the case where the void was confirmed in an area of more than 1% was evaluated as "x". In addition, an image processing device (manufactured by Hitachi Engineering & Services Co., Ltd., trade name "FineSAT FS300III") was used to capture an ultrasonic image in a transmission mode from the substrate side, and the obtained image was binarized. Thereby, the gap portion and the other portions are distinguished. Based on the binarized image, the area of the gap observed when the semiconductor element is embedded and the bonding film is completely bonded to the substrate is determined with respect to the contact area of the bonding film with the substrate (excluding the semiconductor wafer area). The ratio (%). Further, the fabricated semiconductor device was cut so as to be parallel to the long side and the short side of the wafer so as to pass through the center of the fixed position of the controller wafer, and the cut surface was observed using an optical microscope (200 times), and the measurement was continued. The amount of protrusion of the film. When the amount of protrusion of the semiconductor wafer from each side (four places in total) was 150 μm or less, it was evaluated as "○", and "x" was evaluated as long as one place exceeded 150 μm. The results are shown in Table 1 below. [Table 1] It is understood that the dicing die-bonding film having the adhesive film of the example can prevent the overhanging of the adhesive film and sufficiently eliminate the voids, and can efficiently produce a high-quality semiconductor device. The comparative example was found to be incapable of satisfying either or both of the void disappearance and the protrusion prevention.

1‧‧‧被接著體1‧‧‧Exposed body

2‧‧‧半導體晶圓2‧‧‧Semiconductor wafer

3‧‧‧黏著劑層3‧‧‧Adhesive layer

3a‧‧‧部分Section 3a‧‧‧

3b‧‧‧部分Section 3b‧‧‧

4‧‧‧基材4‧‧‧Substrate

5‧‧‧切晶膜5‧‧‧Cut film

10‧‧‧切晶黏晶膜10‧‧‧Cut crystal film

10'‧‧‧切晶黏晶膜10'‧‧‧Cut crystal film

11‧‧‧第1半導體元件11‧‧‧1st semiconductor component

12‧‧‧第2半導體元件12‧‧‧2nd semiconductor component

13‧‧‧第3半導體元件13‧‧‧3rd semiconductor component

21‧‧‧第1接著膜21‧‧‧1st film

22‧‧‧接著膜22‧‧‧Next film

22'‧‧‧接著膜22'‧‧‧Next film

22a‧‧‧半導體晶圓貼附部分22a‧‧‧Semiconductor Wafer Attachment

23‧‧‧第3接著膜23‧‧‧3rd follow-up film

31‧‧‧接合線31‧‧‧bonding line

32‧‧‧接合線32‧‧‧bonding line

41‧‧‧第1半導體元件41‧‧‧1st semiconductor component

43‧‧‧突起電極43‧‧‧ protruding electrode

44‧‧‧底部填充材44‧‧‧Bottom filler

100‧‧‧半導體裝置100‧‧‧Semiconductor device

200‧‧‧半導體裝置200‧‧‧Semiconductor device

T‧‧‧接著膜之厚度T‧‧‧The thickness of the film

T1‧‧‧第1半導體元件之厚度T 1 ‧‧‧The thickness of the first semiconductor component

圖1係模式性地表示本發明之一實施形態之切晶黏晶膜的剖視圖。 圖2係模式性地表示本發明之另一實施形態之切晶黏晶膜的剖視圖。 圖3A係模式性地表示本發明之一實施形態之半導體裝置之製造方法之一步驟的剖視圖。 圖3B係模式性地表示本發明之一實施形態之半導體裝置之製造方法之一步驟的剖視圖。 圖3C係模式性地表示本發明之一實施形態之半導體裝置之製造方法之一步驟的剖視圖。 圖3D係模式性地表示本發明之一實施形態之半導體裝置之製造方法之一步驟的剖視圖。 圖3E係模式性地表示本發明之一實施形態之半導體裝置之製造方法之一步驟的剖視圖。 圖3F係模式性地表示本發明之一實施形態之半導體裝置之製造方法之一步驟的剖視圖。 圖3G係模式性地表示本發明之一實施形態之半導體裝置之製造方法之一步驟的剖視圖。 圖3H係模式性地表示本發明之一實施形態之半導體裝置之製造方法之一步驟的剖視圖。 圖4A係模式性地表示本發明之另一實施形態之半導體裝置之製造方法之一步驟的剖視圖。 圖4B係模式性地表示本發明之另一實施形態之半導體裝置之製造方法之一步驟的剖視圖。 圖4C係模式性地表示本發明之另一實施形態之半導體裝置之製造方法之一步驟的剖視圖。 圖4D係模式性地表示本發明之另一實施形態之半導體裝置之製造方法之一步驟的剖視圖。Fig. 1 is a cross-sectional view schematically showing a crystal cut crystal film according to an embodiment of the present invention. Fig. 2 is a cross-sectional view schematically showing a crystal cut crystal film according to another embodiment of the present invention. Fig. 3A is a cross-sectional view schematically showing a step of a method of manufacturing a semiconductor device according to an embodiment of the present invention. Fig. 3B is a cross-sectional view schematically showing one step of a method of manufacturing a semiconductor device according to an embodiment of the present invention. Fig. 3C is a cross-sectional view schematically showing a step of a method of manufacturing a semiconductor device according to an embodiment of the present invention. Fig. 3D is a cross-sectional view schematically showing a step of a method of manufacturing a semiconductor device according to an embodiment of the present invention. Fig. 3E is a cross-sectional view schematically showing a step of a method of manufacturing a semiconductor device according to an embodiment of the present invention. Fig. 3F is a cross-sectional view schematically showing a step of a method of manufacturing a semiconductor device according to an embodiment of the present invention. Fig. 3G is a cross-sectional view schematically showing one step of a method of manufacturing a semiconductor device according to an embodiment of the present invention. Fig. 3H is a cross-sectional view schematically showing a step of a method of manufacturing a semiconductor device according to an embodiment of the present invention. 4A is a cross-sectional view schematically showing one step of a method of manufacturing a semiconductor device according to another embodiment of the present invention. 4B is a cross-sectional view schematically showing one step of a method of manufacturing a semiconductor device according to another embodiment of the present invention. 4C is a cross-sectional view schematically showing a step of a method of manufacturing a semiconductor device according to another embodiment of the present invention. 4D is a cross-sectional view schematically showing a step of a method of manufacturing a semiconductor device according to another embodiment of the present invention.

Claims (5)

一種接著膜，其係用於將固定於被接著體上之第1半導體元件包埋、且將與該第1半導體元件不同之第2半導體元件固定於被接著體者，且含有熱塑性樹脂、熱硬化性樹脂及無機填充劑，於上述熱塑性樹脂、上述熱硬化性樹脂及上述無機填充劑之合計重量中，上述無機填充劑之含量為30重量%以上且50重量%以下，且上述熱塑性樹脂之含量為10重量%以上且25重量%以下，熱硬化前之於120℃下之黏度為1300 Pa・s以上且4500 Pa・s以下。An adhesive film for embedding a first semiconductor element fixed on a substrate and fixing a second semiconductor element different from the first semiconductor element to a member to be bonded, and containing a thermoplastic resin and heat In the curable resin and the inorganic filler, the content of the inorganic filler is 30% by weight or more and 50% by weight or less based on the total weight of the thermoplastic resin, the thermosetting resin, and the inorganic filler, and the thermoplastic resin is The content is 10% by weight or more and 25% by weight or less, and the viscosity at 120 ° C before thermal curing is 1300 Pa·s or more and 4,500 Pa·s or less. 如請求項1之接著膜，其中熱硬化前之於150℃下之黏度為500 Pa・s以上且2500 Pa・s以下。The adhesive film according to claim 1, wherein the viscosity at 150 ° C before the heat curing is 500 Pa·s or more and 2500 Pa·s or less. 如請求項1或2之接著膜，其中上述熱硬化性樹脂之軟化點為80℃以下。An adhesive film according to claim 1 or 2, wherein the thermosetting resin has a softening point of 80 ° C or less. 一種切晶黏晶膜，其包含：具有基材及形成於該基材上之黏著劑層之切晶膜；及積層於上述黏著劑層上之如請求項1至3中之任一項之接著膜。A dicing die-bonding film comprising: a dicing film having a substrate and an adhesive layer formed on the substrate; and a layer deposited on the adhesive layer as claimed in any one of claims 1 to 3 Then the film. 一種半導體裝置之製造方法，其包括：被接著體準備步驟，其準備固定有第1半導體元件之被接著體；貼合步驟，其將如請求項4之切晶黏晶膜之接著膜與半導體晶圓貼合；切晶步驟，其將上述接著膜與上述半導體晶圓一起切割而形成第2半導體元件；拾取步驟，其將上述第2半導體元件與上述接著膜一起拾取；固定步驟，其藉由與上述第2半導體元件一起拾取之接著膜將固定於上述被接著體之上述第1半導體元件包埋，並且將上述第2半導體元件固定於該被接著體；及加壓硬化步驟，其於上述固定步驟後在加壓下對上述接著膜進行加熱而使其熱硬化。A method of manufacturing a semiconductor device, comprising: a substrate preparation step of preparing a substrate to which a first semiconductor element is fixed; and a bonding step of bonding a film of a dicing die film as claimed in claim 4 to a semiconductor Wafer bonding; a dicing step of cutting the bonding film together with the semiconductor wafer to form a second semiconductor element; and a picking step of picking up the second semiconductor element together with the bonding film; and fixing step An adhesive film picked up from the second semiconductor element is embedded in the first semiconductor element fixed to the adherend, and the second semiconductor element is fixed to the adherend; and a press hardening step is performed After the fixing step, the adhesive film is heated under heat to be thermally cured.
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