TW201829294A - 提供對準的奈米線之聚集體的方法 - Google Patents

提供對準的奈米線之聚集體的方法 Download PDF

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Publication number
TW201829294A
TW201829294A TW106145156A TW106145156A TW201829294A TW 201829294 A TW201829294 A TW 201829294A TW 106145156 A TW106145156 A TW 106145156A TW 106145156 A TW106145156 A TW 106145156A TW 201829294 A TW201829294 A TW 201829294A
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TW
Taiwan
Prior art keywords
nanowire
phase
nanowires
liquid
aggregate
Prior art date
Application number
TW106145156A
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English (en)
Chinese (zh)
Inventor
萊昂 熱姆 卡斯蒂略
米卡埃爾 碧玉
約翰 達爾克維斯特
蘇倫拉 芙蒂
寶莉娜 薇斯特琳德
迪爾哥 渥帕第
尼可拉斯 瑪爾堤森
Original Assignee
瑞典商索爾伏打電流公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 瑞典商索爾伏打電流公司 filed Critical 瑞典商索爾伏打電流公司
Publication of TW201829294A publication Critical patent/TW201829294A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Powder Metallurgy (AREA)
TW106145156A 2016-12-30 2017-12-21 提供對準的奈米線之聚集體的方法 TW201829294A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP16207532 2016-12-30
??16207532.9 2016-12-30

Publications (1)

Publication Number Publication Date
TW201829294A true TW201829294A (zh) 2018-08-16

Family

ID=57749776

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106145156A TW201829294A (zh) 2016-12-30 2017-12-21 提供對準的奈米線之聚集體的方法

Country Status (2)

Country Link
TW (1) TW201829294A (fr)
WO (1) WO2018122101A1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011087913A1 (fr) * 2010-01-14 2011-07-21 The Regents Of The University Of California Solution universelle pour procéder à la croissance de couches minces de nanostructures électroconductrices
WO2013154490A2 (fr) 2012-04-12 2013-10-17 Sol Voltaics Ab Procédés de fonctionnalisation, dispersion et fixation de nanofils
JP2017521265A (ja) 2014-04-29 2017-08-03 ソル ヴォルテイックス エービーＳｏｌ Ｖｏｌｔａｉｃｓ Ａｂ ナノワイヤの集合体を捕集および整列する方法
CN111725339A (zh) * 2014-11-07 2020-09-29 索尔伏打电流公司 密堆积胶体晶体膜的壳赋能垂直对准和精密组装
EP3260414A1 (fr) * 2016-06-21 2017-12-27 Sol Voltaics AB Procédé permettant de transférer des nanofils d'un fluide sur une surface de substrat

Also Published As

Publication number Publication date
WO2018122101A1 (fr) 2018-07-05

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