TW201824530A - Display device - Google Patents

Abstract

A display device including a backplane, a plurality of light-emitting devices, a first distributed Bragg reflector structure and a second distributed Bragg reflector structure is provided. The light-emitting devices are arranged to be disposed on the backplane. The first distributed Bragg reflector structure is disposed between the backplane and the light-emitting devices. The light-emitting devices are disposed between the first distributed Bragg reflector structure and the second distributed Bragg reflector structure. A projected area of the first distributed Bragg reflector structure or the second distributed Bragg reflector structure on the backplane is larger than a projected area of a light-emitting device on the backplane.

Description

Display device

The present invention relates to a display device.

With the advancement of optoelectronic technology, the volume of many optoelectronic components has gradually grown to miniaturization. In recent years, due to the breakthrough in the size of light-emitting diodes (LEDs), micro-LED displays in which arrays of light-emitting diodes are arranged in an array have also been developed. The miniature light-emitting diode display is an active light-emitting element display, which has better contrast performance than the Organic Light-Emitting Diode (OLED) display. It can be visible in the sun. In addition, since the miniature light-emitting diode display uses an inorganic material, it has better reliability and a longer service life than the organic light-emitting diode display. Therefore, the current miniature light-emitting diode display has gradually proved its value in the market, and various development issues such as reducing the difficulty of production or improving brightness and color performance have also received considerable attention.

The present invention provides a display device having a high color purity of a display screen. In addition, the display device is easier to manufacture and is more cost effective.

The display device of the present invention includes a back plate, a plurality of light emitting elements, a first Bragg mirror structure, and a second Bragg mirror structure. A plurality of light emitting elements are arranged on the back plate. The first Bragg mirror structure is disposed between the back plate and the light emitting element. The light emitting element is disposed between the first Bragg mirror structure and the second Bragg mirror structure. The projected area of the first Bragg mirror structure or the second Bragg mirror structure on the backplane is larger than the projected area of the light emitting element on the backplane. Each of the light emitting elements includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer. The light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The first type doped semiconductor layer is disposed between the light emitting layer and the first Bragg mirror structure. The second type doped semiconductor layer is disposed between the second Bragg mirror structure and the light emitting layer. The first Bragg mirror structure is non-conductive and the second Bragg mirror structure is electrically conductive. The first Bragg mirror structure includes a plurality of first conductive vias. The first type doped semiconductor layer of each of the light emitting elements is connected to the first conductive via, and the second type doped semiconductor layer of the light emitting element is electrically connected to the second Bragg mirror structure.

In an embodiment of the invention, the second Bragg mirror structure comprises a plurality of sub-Bragd mirror structures separated from each other. The projected area of each sub-Bragd mirror structure on the backplane is greater than the projected area of the corresponding illuminating element on the backplane.

In an embodiment of the invention, the light-emitting element is a micro-light-emitting diode wafer having a horizontal structure. The first Bragg mirror structure further includes a plurality of second conductive vias. The second type doped semiconductor layer of each of the light emitting elements is connected to the second conductive via.

In an embodiment of the invention, the reflectivity of the first Bragg mirror structure is different from the reflectivity of the second Bragg mirror structure.

In an embodiment of the invention, each of the light-emitting elements is a micro-light-emitting diode wafer. The diagonal length of each of the light-emitting elements falls within the range of 2 micrometers to 150 micrometers.

The display device of the present invention includes a back plate, a plurality of light emitting elements, a first Bragg mirror structure, and a second Bragg mirror structure. The light emitting elements are arranged on the back plate. The first Bragg mirror structure is disposed between the back plate and the light emitting element. The second Bragg mirror structure light-emitting element is disposed between the first Bragg mirror structure and the second Bragg mirror structure. The projected area of the first Bragg mirror structure or the second Bragg mirror structure on the backplane is larger than the projected area of the light emitting element on the backplane. Each of the light emitting elements includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer. The light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The first type doped semiconductor layer is disposed between the light emitting layer and the first Bragg mirror structure. The second type doped semiconductor layer is disposed between the second Bragg mirror structure and the light emitting layer. The first Bragg mirror structure and the second Bragg mirror structure are non-conductive.

In an embodiment of the invention, the first Bragg mirror structure includes a plurality of first conductive vias and a plurality of second conductive vias. The first type doped semiconductor layer of each of the light emitting elements is connected to the first conductive via. The second type doped semiconductor layer of each of the light emitting elements is connected to the second conductive via.

In an embodiment of the invention, the second Bragg mirror structure includes a plurality of first conductive vias and a plurality of second conductive vias. The first type doped semiconductor layer of each of the light emitting elements is connected to the first conductive via. The second type doped semiconductor layer of each of the light emitting elements is connected to the second conductive via.

In an embodiment of the invention, the first Bragg mirror structure includes a plurality of first conductive vias. The first type doped semiconductor layer of each of the light emitting elements is electrically connected to the first conductive via. The second Bragg mirror structure includes a plurality of second conductive vias. The second type doped semiconductor layer of each of the light emitting elements is electrically connected to the second conductive via.

In an embodiment of the invention, each of the light-emitting elements is a micro-light-emitting diode wafer. The diagonal length of each of the light-emitting elements falls within the range of 2 micrometers to 150 micrometers.

Based on the above, the first Bragg mirror structure of the display device of the embodiment of the present invention is disposed between the back plate and the light emitting elements, and the light emitting elements are disposed between the first Bragg mirror structure and the second Bragg mirror structure. Since the light emitted by the light-emitting elements is reflected on the first Bragg mirror structure and the second Bragg mirror structure, the full width at half maximum of the spectrum is reduced, so that when the light emitted by the light-emitting elements leaves the display device, The color of the display screen formed by the light emitted by these light-emitting elements is high. In addition, the projected area of the first Bragg mirror structure or the second Bragg mirror structure on the backplane is larger than the projected area of the light-emitting element on the backplane, so that the first Bragg mirror structure or the second Bragg mirror structure can be performed over the entire surface. It is fabricated and directly used with these light-emitting elements for application without separately forming a first Bragg mirror structure or a second Bragg mirror structure on each of the light-emitting elements. Therefore, the display device is easier to manufacture and is more cost effective.

The above described features and advantages of the invention will be apparent from the following description.

FIG. 1A is a schematic cross-sectional view of a display device according to an embodiment of the invention. Please refer to FIG. 1A. In the present embodiment, the display device 100 includes a back plate 110, a plurality of light emitting elements 120, a first Bragg Reflector (DBR) 130, and a second Bragg mirror structure 140. The light emitting elements 120 are arranged on the back plate 110. The first Bragg reflector structure 130 is disposed between the back plate 110 and the light emitting elements 120, and the light emitting elements 120 are disposed between the first Bragg mirror structure 130 and the second Bragg mirror structure 140. Specifically, the projected area of the first Bragg mirror structure 130 or the second Bragg mirror structure 140 on the backplane 110 is larger than the projected area of the light-emitting element 120 on the backplane 110. In detail, the projected areas of the first Bragg reflector structure 130 and the second Bragg mirror structure 140 on the backplane 110 of the present embodiment are both larger than the projected area of the light-emitting component 120 on the backplane 110. In the present embodiment, the light-emitting elements 120 are interposed between the first Bragg mirror structure 130 and the entire second Bragg mirror structure 140.

In the present embodiment, these light emitting elements 120 are arranged on the back sheet 110 to form a plurality of pixels P of the display device 100. The display device 100 emits light by these light emitting elements 120 to display a display screen. In addition, these light-emitting elements 120 can also be applied to a projection system to project a color projection image in a projected manner. Specifically, the light-emitting elements 120 include a plurality of light-emitting elements 120a, light-emitting elements 120b, and light-emitting elements 120c, and one pixel P includes three sub-pixels, one light-emitting element 120a, one light-emitting element 120b, and one light-emitting element 120c are respectively located. Among the three sub-pixels, the light-emitting element 120a, the light-emitting element 120b, and the light-emitting element 120c have, for example, a plurality of different light-emitting colors. For example, the illuminating color of the illuminating element 120a, the illuminating color of the illuminating element 120b, and the illuminating color of the illuminating element 120c are, for example, red, green, and blue, respectively. However, in other embodiments, the light-emitting elements 120 in each pixel P may also include other colors, such as yellow, or the light-emitting elements 120 may be arranged in other order according to actual display requirements. Alternatively, in other embodiments, light of a single color may be emitted by a light-emitting element 120, or light of a different color may be emitted by a light-emitting element 120, and the invention is not limited thereto. In addition, each pixel P may also include other numbers of sub-pixels and other numbers of light-emitting elements 120 for implementing multi-color display, monochrome display or other display effects, and the present invention does not limit.

In the present embodiment, the light-emitting elements 120 (light-emitting elements 120a, 120a, 120c) are, for example, light-emitting diode (LED) wafers. Specifically, these light-emitting elements 120 are, for example, micro-LED (μLED) wafers having a small size, and the diagonal length of each of the light-emitting elements 120 falls within a range of 2 μm to 150 μm. In a related embodiment, these differently colored light-emitting elements 120 can achieve full color display or projection effects through proper alignment and color selection. The present invention does not limit the color selection and arrangement of the light-emitting elements 120. The color selection of these light-emitting elements 120, as well as their arrangement on the backsheet 110, can be adjusted according to different usage requirements, design specifications, and product positioning.

FIG. 1B is an enlarged schematic view of a region A1 of the embodiment of FIG. 1A. Please refer to FIG. 1B. In the present embodiment, the light-emitting element 120a, the light-emitting element 120b, and the light-emitting element 120c have similar structures, and these light-emitting elements 120 have different light-emitting colors based on the difference in material selection. Here, the light-emitting element 120a is taken as a representative to exemplarily describe the structure of each of the light-emitting elements 120 in the present embodiment. Specifically, each of the light emitting elements 120 includes a first type doped semiconductor layer 122, a light emitting layer 126, and a second type doped semiconductor layer 124, and the light emitting layer 126 is disposed on the first type doped semiconductor layer 122 and the second type doped Between the semiconductor layers 124. In detail, the materials of the first type doped semiconductor layer 122, the second type doped semiconductor layer 124, and the light emitting layer 126 may be, for example, a group II-VI material (eg, zinc selenide (ZnSe)) or III-V nitrogen. Grouping materials (eg, gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), or aluminum indium gallium nitride (AlInGaN) )) or other semiconductor materials suitable for electroluminescence, the invention is not limited thereto. In addition, one of the first type doped semiconductor layer 122 and the second type doped semiconductor layer 124 is a P type doped semiconductor layer, and the first type doped semiconductor layer 122 and the second type doped semiconductor layer 124 The other of them is an N-type doped semiconductor layer. That is, the first type doped semiconductor layer 122 and the second type doped semiconductor layer 124 are two semiconductor layers having different doping types. The first type doped semiconductor layer 122 and the second type doped semiconductor layer 124 have different thicknesses due to different doping patterns. In the present embodiment, the thinner layer is the first type doped semiconductor layer 122. The thicker one is the second type doped semiconductor layer 124. Thereby, the light-emitting layer 126 is closer to the back plate 110, so that the light-emitting element 120 has a better heat dissipation effect. For example, the first type doped semiconductor layer 122 is, for example, a P type doped semiconductor layer, and the second type doped semiconductor layer 124 is, for example, an N type doped semiconductor layer. In addition, the luminescent layer 126 includes, for example, a multiple quantum well ( MQW) structure or a quantum well (QW) structure, and the invention is not limited thereto.

Please refer to FIG. 1A and FIG. 1B at the same time. In this embodiment, the first type doped semiconductor layer 122 is disposed between the light emitting layer 126 and the first Bragg mirror structure 130, and the second type doped semiconductor layer 124 is disposed in the second Bragg mirror structure 140 and emits light. Between layers 126. The first Bragg mirror structure 130 is electrically conductive with at least one of the second Bragg reflector structures 140. Specifically, the first Bragg mirror structure 130 is electrically conductive, and the first Bragg mirror structure 130 includes a plurality of sub-Brag mirror structures 130a separated from each other, and a projected area of each sub-Bragd mirror structure 130a on the back plate 110 More than one projected area of the light emitting element 120 on the backing plate 110. The first type doped semiconductor layer 122 of each of the light emitting elements 120 is electrically connected to a sub-Bragd mirror structure 130a, that is, the light-emitting element 120 of each sub-pixel and the sub-Bragd mirror structure 130a underneath on the back plate 110. They are separated from each other. In addition, the gap between the light-emitting elements 120 and the gap between the sub-Brag mirror structures 130a are filled with a filler F, and the filler F is used to electrically insulate adjacent two light-emitting elements 120 and electrically insulated adjacent to each other. The two sub-Bragd mirror structures 130a, the filler F may be a light-transmitting, semi-transparent or opaque adhesive material, or may be a photoresist material, and the invention is not limited thereto.

In addition, in the present embodiment, the second Bragg mirror structure 140 is also electrically conductive, and the layers of the second type doped semiconductors 124 of the light-emitting elements 120 are electrically connected to the second Bragg mirror structure 140. In particular, the material of at least one of the first Bragg reflector structure 130 and the second Bragg mirror structure 140 comprises silver. Alternatively, the material of the first Bragg mirror structure 130 and the second Bragg mirror structure 140 may also be other conductive materials. In addition, in the embodiment, the backplane 110 includes a circuit structure (not shown), and the light-emitting elements 120 are electrically connected to the plurality of contacts on the circuit structure through the conductive sub-Brag mirror structures 130a. Additionally, the second Bragg reflector structure 140 can also be coupled to a circuit structure on the backplane 110. Therefore, the light-emitting layers 126 of the light-emitting elements 120 disposed on the backplane 110 can respectively drive light by the current transmitted by the circuit structure. Specifically, the backplane 110 having different circuit structure designs may be a semiconductor substrate, a submount, a complementary metal-oxide-semiconductor (CMOS) circuit substrate, and a germanium base. Liquid crystal on silicon (LCOS) substrates or other types of substrates. The form of the backplane 110 and the corresponding circuit structure of the backplane 110 can be adjusted according to different use requirements, design specifications, and product positioning, and the present invention is not limited thereto.

In this embodiment, the first Bragg mirror structure 130 and the second Bragg mirror structure 140 are respectively stacked by two materials having different refractive indices, and the reflectivity of the first Bragg mirror structure 130 is different from the second. The reflectivity of the Bragg mirror structure 140. In particular, the reflectivity of the first Bragg reflector structure 130 is greater than the reflectivity of the second Bragg mirror structure 140. For example, the reflectivity of the first Bragg reflector structure 130 is, for example, 99%, and the reflectivity of the second Bragg reflector structure 140 is, for example, 40%. Light emitted by these illuminating elements 120 is reflected between the first Bragg mirror structure 130 and the second Bragg mirror structure 140 and exits the display device 100 by the second Bragg mirror structure 140. The light emitted by the light emitting elements 120 is transmitted through the first Bragg mirror structure 130 and the second Bragg mirror structure 140 through the refractive index design and the thickness design of the stacked materials of the first Bragg reflector structure 130 and the second Bragg mirror structure 140. After the reflection occurs, its wavelength is adjusted. Specifically, the full width at half maximum of the spectrum of the light emitted by the light-emitting elements 120 is gradually reduced after one or more reflections. Therefore, when the light emitted by the light-emitting elements 120 leaves the display device 100, the full width at half maximum of the spectrum is narrow, and the color purity of the display screen formed by the light is high. For example, the full width at half maximum of the spectrum of the light emitted by these light-emitting elements 120 falls, for example, in the range of 30 nm to 40 nm. When the light emitted by the light-emitting elements 120 resonates between the first Bragg reflector structure 130 and the second Bragg mirror structure 140 and exits the display device 100, the measured light spectrum outside the display device 100 The full width at half maximum is, for example, reduced to fall within the range of 10 nm to 25 nm. In other words, by the first Bragg reflector structure 130 and the second Bragg mirror structure 140, the full width at half maximum of the spectrum of the light-emitting element 120 can be reduced by at least 16% to 75% to increase the direct light intensity and color of the light-emitting element 120. purity. In other embodiments, however, the full width at half maximum of the spectrum of the light emitted by the light-emitting elements 120 may have other values. Preferably, the first half-width of the spectrum of the light-emitting element 120 is reduced by at least 40% to 90% through the first Bragg mirror structure 130 and the second Bragg mirror structure 140, and in these embodiments, other suitable The structural design of the display device 100 adjusts the light output performance, and the invention is not limited thereto.

Specifically, the projected area of the first Bragg reflector structure 130 or the second Bragg mirror structure 140 of the display device 100 of the embodiment of the present invention on the backplane is larger than the projected area of the light-emitting element 120 on the backplane. That is, the first Bragg mirror structure 130 or the second Bragg mirror structure 140 is fabricated over the entire surface and directly applied with the light-emitting elements 120 without having to fabricate the first Bragg mirror structure 130 or the first A two Bragg mirror structure 140 is on each of the light emitting elements 120. Therefore, the display device 100 is easier to manufacture and has better cost effectiveness. In the present embodiment, the second Bragg reflector structure 140 is formed entirely on the light-emitting element 120 and the filler F. In addition, the projected area of each sub-Bragd mirror structure 130a on the backplane 110 is different from the projected area of the light-emitting elements 120a disposed on the sub-Bragd mirror structure 130a on the backplane 110. In particular, the projected area of the sub-Bragd mirror structure 130a on the backplane 110 will be greater than the projected area of the light-emitting element 120a on the backplane 110.

2 is a cross-sectional view of a display device according to another embodiment of the present invention. Please refer to FIG. 2 . The display device 200 of the embodiment of FIG. 2 is similar to the display device 100 of the embodiment of FIGS. 1A-1B. For the components of the display device 200 and related descriptions, reference may be made to the display device 100 of the embodiment of FIG. 1A to FIG. 1B, and details are not described herein again. The difference between the display device 200 and the display device 100 is as follows. In the present embodiment, the second Bragg mirror structure 240 of the display device 200 is not electrically conductive. The second Bragg reflector structure 240 includes a plurality of conductive vias 242 filled with a conductive material 244, and the second type doped semiconductor layer 124 of each of the light emitting elements 120 is electrically connected to the conductive material 244 in a conductive via 242. In addition, the conductive material 244 of the conductive vias 242 may be, for example, a circuit structure (not shown) that is electrically connected to the backplane 110 or other external circuitry.

Specifically, the light-emitting elements 120 of the display device 200 are electrically connected to the circuit structure of the back plate 110 through the conductive sub-Brag mirror structures 130a, and the light-emitting elements 120 also pass through the conductive vias 242 and the conductive material 244. The electrical structure of the backplane 110 is electrically connected. Therefore, the light-emitting layers 126 of the light-emitting elements 120 disposed on the backplane 110 can respectively drive light by the current transmitted by the circuit structure of the backplane 110. In the present embodiment, since the display device 200 includes the first Bragg mirror structure 130 and the second Bragg mirror structure 240, and the projection of the first Bragg mirror structure 130 or the second Bragg mirror structure 240 on the back plate 110 The area is larger than the projected area of the light-emitting element 120 on the back plate 110. Specifically, the projected area of the sub-Bragd mirror structure 130a on the back plate 110 is larger than the projected area of the corresponding light-emitting element 120 on the back plate 110. Accordingly, the display device 200 can at least achieve the effects described by the display device 100 of the embodiment of FIGS. 1A-1B. The display screen of the display device 200 has a higher color purity, is easier to manufacture, and is more cost effective.

3 is a cross-sectional view of a display device according to still another embodiment of the present invention. Please refer to FIG. 3. The display device 300 of the embodiment of FIG. 3 is similar to the display device 100 of the embodiment of FIGS. 1A-1B. For the components of the display device 300 and related descriptions, reference may be made to the display device 100 of the embodiment of FIG. 1A to FIG. 1B, and details are not described herein again. The difference between the display device 300 and the display device 100 is as follows. In the present embodiment, the first Bragg mirror structure 330 of the display device 300 is non-conductive and the second Bragg mirror structure 140 is electrically conductive. In addition, the first Bragg mirror structure 330 includes a plurality of spaced-apart conductive vias 332 respectively corresponding to the light-emitting elements 120, and the first-type doped semiconductor layer 122 of each of the light-emitting elements 120 and the conductive material in a conductive via 332. 334 electrical connection. In addition, the conductive material 334 of the conductive vias 332 is, for example, a circuit structure (not shown) electrically connected to the backplane 110, respectively.

Specifically, the light-emitting elements 120 of the display device 300 are electrically connected to the circuit structure of the back plate 110 through the conductive vias 332 and the conductive material 334, and the light-emitting elements 120 are also transmitted through the second Bragg mirror structure 140. The circuit structure of the backplane 110 is electrically connected. Therefore, the light-emitting layers 126 of the light-emitting elements 120 disposed on the backplane 110 can respectively drive light by the current transmitted by the circuit structure of the backplane 110. In the present embodiment, since the display device 300 includes the first Bragg mirror structure 330 and the second Bragg mirror structure 140, and the projected area of the first Bragg mirror structure 330 or the second Bragg mirror structure 140 on the back panel It is larger than the projected area of a light-emitting element 120 on the backplane. Accordingly, the display device 300 can at least achieve the effects described by the display device 100 of the embodiment of FIGS. 1A-1B. The display screen of the display device 300 has a higher color purity, is easier to manufacture, and is more cost effective.

4 is a cross-sectional view of a display device according to still another embodiment of the present invention. Please refer to FIG. 4 . The display device 400 of the embodiment of FIG. 4 is similar to the display device 300 of the embodiment of FIG. For the components of the display device 400 and related descriptions, reference may be made to the display device 300 of the embodiment of FIG. 3, and details are not described herein again. The difference between the display device 400 and the display device 300 is as follows. In the present embodiment, the first Bragg mirror structure 430 and the second Bragg mirror structure 440 of the display device 400 are not electrically conductive. Additionally, at least one of the first Bragg mirror structure 430 and the second Bragg mirror structure 440 includes a multilayer film. In some embodiments, the first Bragg reflector structure 430 and the second Bragg reflector structure 440 may also include other non-conductive materials or structures, and the invention is not limited thereto. In addition, in the embodiment, the first Bragg reflector structure 430 includes a plurality of first conductive vias 432, and the first type doped semiconductor layer 122 of each of the light emitting elements 120 and the first conductive via 432 are electrically conductive. Material 434 is electrically connected. The second Bragg reflector structure 440 includes a plurality of second conductive vias 442, and the second type doped semiconductor layer 124 of each of the light emitting elements 120 is electrically connected to the conductive material 444 in a second conductive via 442. In addition, the conductive material 434 of the first conductive vias 432 may be, for example, electrically connected to the circuit structure (not shown) on the backplane 110, and the conductive material 444 in the second conductive vias 442 may also be, for example. They are electrically connected to the circuit structure on the backplane 110, respectively.

Specifically, the light-emitting elements 120 of the display device 400 are electrically connected to the circuit structure of the back plate 110 through the first conductive vias 432 and the conductive material 434, and the light-emitting elements 120 also pass through the second conductive vias 442. And the conductive material 444 is electrically connected to the circuit structure of the back plate 110. Therefore, the light-emitting layers 126 of the light-emitting elements 120 disposed on the backplane 110 can respectively drive light by the current transmitted by the circuit structure of the backplane 110. In the present embodiment, since the display device 400 includes the first Bragg mirror structure 430 and the second Bragg mirror structure 440, the entire surface is formed and then opened. Therefore, it is not necessary to separately fabricate the first Bragg mirror structure 430 and the second Bragg mirror structure 440 on the light-emitting element 120, and then perform subsequent processes (for example, cutting or bonding the back sheet 110 and the like). In detail, the display device 400 can at least achieve the effects described by the display device 100 of the embodiment of FIGS. 1A-1B. The display screen of the display device 400 has a higher color purity, is easier to manufacture, and is more cost effective.

FIG. 5A is a schematic cross-sectional view of a display device according to another embodiment of the present invention, and FIG. 5B is an enlarged schematic view of a region A2 of the embodiment of FIG. 5A. The display device 500 of the embodiment of FIGS. 5A through 5B is similar to the display device 100 of the embodiment of FIGS. 1A through 1B. For the components of the display device 500 and related descriptions, reference may be made to the display device 100 of the embodiment of FIG. 1A to FIG. 1B, and details are not described herein again. The difference between the display device 500 and the display device 100 is as follows. In the present embodiment, the light-emitting elements 520 (including the light-emitting element 520a, the light-emitting element 520b, and the light-emitting element 520c) of the display device 500 include a first-type doped semiconductor layer 522, a light-emitting layer 526, and a second-type doped semiconductor layer 524. The light emitting layer 526 is disposed between the first type doped semiconductor layer 522 and the second type doped semiconductor layer 524. In addition, the light emitting element 520 further includes a first electrode 527, a second electrode 528, and an insulating layer IS. The first electrode 527 is in contact with and electrically connected to the first type doped semiconductor layer 522, and the second electrode 528 is in contact with and electrically connected to the second type doped semiconductor layer 524. In addition, the insulating layer IS is formed on the surfaces of the first type doped semiconductor layer 522, the light emitting layer 526, and the second type doped semiconductor layer 524 to electrically connect the first electrode 527 and the second type doped semiconductor layer 524 and the light emitting layer 526. Sexually isolated, the insulating layer IS may be formed of the same material as the filler F and formed separately or separately. In detail, the first type doped semiconductor layer 522 of each of the light emitting elements 520 has a surface S facing the light emitting layer 526. Surface S includes surface S1 and surface S2, surface S1 is the first portion of surface S, and surface S2 is the second portion of surface S. In addition, the light-emitting layer 526 covers the surface S1 (the first portion of the surface S) to expose the surface S2 (the second portion of the surface S). In the present embodiment, the light-emitting elements 520 are, for example, a horizontally structured micro-light-emitting diode wafer, and are different from the light-emitting element 120 (micro-light-emitting diode wafer) of the embodiment of FIGS. 1A to 1B. Vertical structured.

In the present embodiment, the second Bragg reflector structure 540 is non-conductive, and the second Bragg mirror structure 540 includes a plurality of first conductive vias 542 filled with conductive material 546 and a plurality of second conductive vias filled with conductive material 546. Hole 544. The first type doped semiconductor layer 522 of each of the light emitting elements 520 is electrically connected to the conductive material 546 of the first conductive via 542 through the first electrode 527, and the second type doped semiconductor layer 524 of each of the light emitting elements 520 passes through the first The two electrodes 528 are electrically connected to the conductive material 546 in the second conductive via 544. The arrangement of the first conductive vias 542 may be, for example, a circuit structure (not shown) electrically connecting the first electrodes 527 of the light-emitting elements 520 to the backplane 110, and the second conductive vias 544 The arrangement may also be, for example, a circuit structure in which the second electrodes 528 of the light-emitting elements 520 are electrically connected to the back plate 110, respectively. In addition, the first conductive vias 542 and the second conductive vias 544 are located on the same side of the light-emitting elements 520. In the present embodiment, the first Bragg mirror structure 530 on the other side of the light-emitting elements 520 is made of, for example, a non-conductive material. For example, the first Bragg reflector structure 530 may have a non-conductive multilayer film, and the invention is not limited thereto.

Specifically, the light-emitting elements 520 of the display device 500 are electrically connected to the circuit structure of the back plate 110 through the conductive material 546 of the first conductive vias 542, and the light-emitting elements 520 also pass through the second conductive vias. 544 is electrically connected to the circuit structure of the backplane 110. Therefore, the light-emitting layers 526 of the light-emitting elements 520 disposed on the back plate 110 can drive the light by the current transmitted by the circuit structure of the back plate 110, respectively. In the present embodiment, the display device 500 includes a first Bragg mirror structure 530 and a second Bragg mirror structure 540, and the first Bragg mirror structure 530 or the second Bragg mirror structure 540 is fabricated on the entire surface and disposed in the light. Both sides of element 520. Therefore, the projected area of the first Bragg mirror structure 530 or the second Bragg mirror structure 540 on the backplane 110 is larger than the projected area of the light-emitting element 520 on the backplane 110. Accordingly, the display device 500 can at least achieve the effects described by the display device 100 of the embodiment of FIGS. 1A-1B. The display screen of the display device 500 has a high color purity, is easier to manufacture, and is more cost effective.

FIG. 5C is an enlarged schematic view showing another structural aspect of the light-emitting element of the embodiment of FIG. 5A in an area, please refer to FIG. 5C. Light-emitting element 520' is similar to light-emitting element 520 depicted in Figure 5B. The difference between the light-emitting element 520' and the light-emitting element 520 is as follows. The light emitting element 520' includes a first type doped semiconductor layer 522', a light emitting layer 526', a second type doped semiconductor layer 524', a first electrode 527', a second electrode 528', and an insulating layer IS'. The insulating layer IS' serves to electrically isolate the first electrode 527' from the second type doped semiconductor layer 524' and the light emitting layer 526'. Specifically, the first electrode 527 ′ is electrically connected to the first type doped semiconductor layer 522 ′ through the through holes, such that the first type doped semiconductor layer 522 ′ passes through the first electrode 527 ′ and the first conductive through hole. The conductive material 546' in 542' is electrically connected. In addition, the second type doped semiconductor layer 524' is electrically connected to the conductive material 546' in the second conductive via 544' through the second electrode 528'.

FIG. 6A is a schematic cross-sectional view of a display device according to another embodiment of the present invention, and FIG. 6B is an enlarged schematic view of a region A3 of the embodiment of FIG. 6A. The display device 600 of the embodiment of Figures 6A-6B is similar to the display device 500 of the embodiment of Figures 5A-5B. For the components of the display device 600 and related descriptions, reference may be made to the display device 500 of the embodiment of FIG. 5A to FIG. 5B, and details are not described herein again. The difference between the display device 600 and the display device 500 is as follows. In the present embodiment, the light-emitting elements 620 (including the light-emitting element 620a, the light-emitting element 620b, and the light-emitting element 620c) of the display device 600 include a first-type doped semiconductor layer 622, a light-emitting layer 626, and a second-type doped semiconductor layer 624. The light emitting layer 626 is disposed between the first type doped semiconductor layer 622 and the second type doped semiconductor layer 624. In addition, the light emitting element 620 further includes a first electrode 627, a second electrode 628, and an insulating layer IS. The first electrode 627 is in contact with and electrically connected to the first type doped semiconductor layer 622, and the second electrode 628 is in contact with and electrically connected to the second type doped semiconductor layer 624. In addition, the insulating layer IS is formed on the surfaces of the first type doped semiconductor layer 622, the light emitting layer 626, and the second type doped semiconductor layer 624 to electrically connect the first electrode 627 and the second type doped semiconductor layer 624 and the light emitting layer 626. Sexual isolation. In detail, the first type doped semiconductor layer 622 of each of the light emitting elements 620 has a surface S facing the light emitting layer 626. Surface S includes surface S1 and surface S2, surface S1 is the first portion of surface S, and surface S2 is the second portion of surface S. In addition, the light-emitting layer 626 covers the surface S1 (the first portion of the surface S) to expose the surface S2 (the second portion of the surface S). In the present embodiment, the first Bragg mirror structure 630 is non-conductive, and the first Bragg mirror structure 630 includes a plurality of first conductive vias 632 filled with conductive material 636 and a plurality of second conductive vias filled with conductive material 636. Hole 634. The first type doped semiconductor layer 622 of each of the light emitting elements 620 is electrically connected to the first conductive via 632 through the first electrode 627, and the second type doped semiconductor 624 layer of each of the light emitting elements 620 is transmitted through the second electrode 628 and the first The two conductive through holes 634 are electrically connected. The arrangement of the first conductive vias 632 can be, for example, a circuit structure (not shown) for electrically connecting the first electrodes 627 of the light-emitting elements 620 to the back plate 110, and the settings of the second conductive vias 634. For example, the second electrode 628 of the light-emitting elements 620 can be electrically connected to the circuit structure on the back plate 110, respectively. In addition, the first conductive vias 632 and the second conductive vias 634 are located on the same side of the light-emitting elements 620. In the present embodiment, the second Bragg mirror structure 640 on the other side of the light-emitting elements 620 is made, for example, of a non-conductive material. For example, the second Bragg reflector structure 640 can have a multilayer film that is not electrically conductive, and the invention is not limited thereto.

Specifically, the light-emitting elements 620 of the display device 600 are electrically connected to the circuit structure of the back plate 110 through the conductive material 636 of the first conductive vias 632, and the light-emitting elements 620 also pass through the second conductive vias. The conductive material 636 in 634 is electrically connected to the circuit structure of the back plate 110. Therefore, the light-emitting layers 626 of the light-emitting elements 620 disposed on the backplane 110 can respectively drive light by the current transmitted by the circuit structure of the backplane 110. In the present embodiment, the display device 600 includes a first Bragg mirror structure 630 and a second Bragg mirror structure 640, and the first Bragg mirror structure 630 or the second Bragg mirror structure 640 is fabricated on the entire surface and disposed on the light. Both sides of the component 620. Therefore, the projected area of the first Bragg mirror structure 630 or the second Bragg mirror structure 640 on the backplane 110 is greater than the projected area of the light-emitting element 620 on the backplane 110. Accordingly, the display device 600 can at least achieve the effects described by the display device 100 of the embodiment of FIGS. 1A-1B. The display screen of the display device 600 has a higher color purity, is easier to manufacture, and is more cost effective.

FIG. 6C is an enlarged schematic view showing another structural aspect of the light-emitting element of the embodiment of FIG. 6A in an area, please refer to FIG. 6C. Light-emitting element 620' is similar to light-emitting element 620 depicted in Figure 6B. The difference between the light-emitting element 620' and the light-emitting element 620 is as follows. The light emitting element 620' includes a first type doped semiconductor layer 622', a light emitting layer 626', a second type doped semiconductor layer 624', a first electrode 627', a second electrode 628', and an insulating layer IS'. The insulating layer IS' serves to electrically isolate the first electrode 627' from the second type doped semiconductor layer 624' and the light emitting layer 626'. Specifically, the first electrode 627 ′ is electrically connected to the first type doped semiconductor layer 622 ′ through the through hole, such that the first type doped semiconductor layer 622 ′ passes through the first electrode 627 ′ and the first conductive through hole. The conductive material 636' in 632' is electrically connected. In addition, the second type doped semiconductor layer 624' is electrically connected to the conductive material 636' in the second conductive via 634' through the second electrode 628'.

In summary, the first Bragg mirror structure of the display device of the embodiment of the present invention is disposed between the back plate and the light emitting elements, and the light emitting elements are disposed in the first Bragg mirror structure and the second Bragg mirror structure. between. Since the light emitted by the light-emitting elements is reflected on the first Bragg mirror structure and the second Bragg mirror structure, the full width at half maximum of the spectrum is reduced, so that when the light emitted by the light-emitting elements leaves the display device, The color of the display screen formed by the light emitted by these light-emitting elements is high. In addition, the projected area of the first Bragg mirror structure or the second Bragg mirror structure on the backplane is larger than the projected area of the light-emitting element on the backplane, so that the first Bragg mirror structure or the second Bragg mirror structure can be completed. The fabrication is performed in a face-to-face manner and directly applied with these light-emitting elements without separately forming a first Bragg mirror structure or a second Bragg mirror structure on each of the light-emitting elements. Therefore, the display device is easier to manufacture and is more cost effective.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

100, 200, 300, 400, 500, 600‧‧‧ display devices

110‧‧‧ Backboard

120, 120a, 120b, 120c, 520, 520', 520a, 520b, 520c, 620, 620', 620a, 620b, 620c‧ ‧ luminescent elements

122, 522, 522', 622, 622'‧‧‧ first type doped semiconductor layer

124, 524, 524', 624, 624'‧‧‧ second type doped semiconductor layer

126, 526, 526', 626, 626' ‧ ‧ luminescent layer

130, 330, 430, 530, 630‧‧‧ first Bragg mirror structure

130a‧‧‧Sub-Bragd Mirror Structure

140, 240, 440, 540, 640‧‧‧second Bragg mirror structure

242, 332‧‧‧ conductive through holes

244, 334, 434, 444, 546, 546', 636, 636'‧‧‧ conductive materials

432, 542, 542', 632, 632'‧‧‧ first conductive through holes

442, 544, 544', 634, 634' ‧ ‧ second conductive through holes

527, 527', 627, 627' ‧ ‧ first electrode

528, 528', 628, 628' ‧ ‧ second electrode

A1, A2, A3‧‧‧ areas

F‧‧‧Filling materials

IS, IS’‧‧‧Insulation

P‧‧‧ pixels

S, S1, S2‧‧‧ surface

1A is a cross-sectional view of a display device in accordance with an embodiment of the present invention. FIG. 1B is an enlarged schematic view of a region A1 of the embodiment of FIG. 1A. 2 is a cross-sectional view showing a display device according to another embodiment of the present invention. 3 is a cross-sectional view showing a display device according to still another embodiment of the present invention. 4 is a cross-sectional view showing a display device according to still another embodiment of the present invention. FIG. 5A is a cross-sectional view of a display device according to another embodiment of the present invention. FIG. 5B is an enlarged schematic view of a region A2 of the embodiment of FIG. 5A. FIG. 5C is an enlarged schematic view showing another structural aspect of the embodiment of FIG. 5A in a region. 6A is a cross-sectional view of a display device according to still another embodiment of the present invention. FIG. 6B is an enlarged schematic view of a region A3 of the embodiment of FIG. 6A. FIG. 6C is an enlarged schematic view showing another structural aspect of the embodiment of FIG. 6A in a region.

Claims (10)

A display device comprising: a back plate; a plurality of light emitting elements arranged on the back plate; a first Bragg mirror structure disposed between the back plate and the light emitting elements; and a second Bragg reflection Mirror structure, the light emitting elements are disposed between the first Bragg mirror structure and the second Bragg mirror structure, wherein the first Bragg mirror structure or the projection of the second Bragg mirror structure on the back panel An area greater than a projected area of the light emitting element on the backplane, wherein each of the light emitting elements includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer, wherein the light emitting layer is disposed on the first Between the doped semiconductor layer and the second doped semiconductor layer, the first doped semiconductor layer is disposed between the luminescent layer and the first Bragg mirror structure, and the second doped semiconductor a layer is disposed between the second Bragg mirror structure and the light emitting layer, wherein the first Bragg mirror structure is non-conductive, and the second Bragg mirror structure is electrically conductive, the first The Rag mirror structure includes a plurality of first conductive vias, and the first type doped semiconductor layer of each of the light emitting elements is connected to a first conductive via, and the second type doping of the light emitting elements The semiconductor layers are electrically coupled to the second Bragg mirror structure. The display device of claim 1, wherein the second Bragg mirror structure comprises a plurality of sub-Brag mirror structures separated from each other, and a projected area of each sub-Brag mirror structure on the back plate is larger than corresponding The projected area of one of the light-emitting elements on the backplane. The display device of claim 1, wherein the light emitting elements are horizontally structured micro light emitting diode chips, the first Bragg mirror structure further comprising a plurality of second conductive through holes, each of the light emitting The second type doped semiconductor layer of the device is connected to a second conductive via. The display device of claim 1, wherein the reflectance of the first Bragg mirror structure is different from the reflectivity of the second Bragg mirror structure. The display device of claim 1, wherein each of the light-emitting elements is a micro-light-emitting diode wafer, and a diagonal length of each of the light-emitting elements falls within a range of 2 micrometers to 150 micrometers. A display device comprising: a back plate; a plurality of light emitting elements arranged on the back plate; a first Bragg mirror structure disposed between the back plate and the light emitting elements; and a second Bragg reflection Mirror structure, the light emitting elements are disposed between the first Bragg mirror structure and the second Bragg mirror structure, wherein the first Bragg mirror structure or the projection of the second Bragg mirror structure on the back panel An area greater than a projected area of the light emitting element on the backplane, wherein each of the light emitting elements includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer, wherein the light emitting layer is disposed on the first Between the doped semiconductor layer and the second doped semiconductor layer, the first doped semiconductor layer is disposed between the luminescent layer and the first Bragg mirror structure, and the second doped semiconductor A layer is disposed between the second Bragg mirror structure and the luminescent layer, wherein the first Bragg mirror structure and the second Bragg mirror structure are non-conductive. The display device of claim 6, wherein the first Bragg mirror structure comprises a plurality of first conductive vias and a plurality of second conductive vias, the first type doped semiconductor of each of the light emitting elements The layer is connected to the first conductive via, and the second doped semiconductor layer of each of the light emitting elements is connected to a second conductive via. The display device of claim 6, wherein the second Bragg mirror structure comprises a plurality of first conductive vias and a plurality of second conductive vias, the first type doped semiconductor of each of the light emitting elements The layer is connected to the first conductive via, and the second doped semiconductor layer of each of the light emitting elements is connected to a second conductive via. The display device of claim 6, wherein the first Bragg mirror structure comprises a plurality of first conductive vias, and the first type doped semiconductor layer of each of the light emitting elements and the first conductive layer The through-hole is electrically connected. The second Bragg mirror structure includes a plurality of second conductive vias, and the second-type doped semiconductor layer of each of the light-emitting elements is electrically connected to a second conductive via. The display device according to claim 6, wherein each of the light-emitting elements is a micro-light-emitting diode wafer, and a diagonal length of each of the light-emitting elements falls within a range of 2 micrometers to 150 micrometers.