TW201816893A - Substrate processing apparatus and the method of substrate processing - Google Patents

Substrate processing apparatus and the method of substrate processing Download PDF

Info

Publication number
TW201816893A
TW201816893A TW106124217A TW106124217A TW201816893A TW 201816893 A TW201816893 A TW 201816893A TW 106124217 A TW106124217 A TW 106124217A TW 106124217 A TW106124217 A TW 106124217A TW 201816893 A TW201816893 A TW 201816893A
Authority
TW
Taiwan
Prior art keywords
substrate
processing chamber
guide
stage
base
Prior art date
Application number
TW106124217A
Other languages
Chinese (zh)
Other versions
TWI737774B (en
Inventor
沈亨基
金鎬岩
白種化
金戊一
Original Assignee
Ap系統股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ap系統股份有限公司 filed Critical Ap系統股份有限公司
Publication of TW201816893A publication Critical patent/TW201816893A/en
Application granted granted Critical
Publication of TWI737774B publication Critical patent/TWI737774B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67023Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67715Changing the direction of the conveying path
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

A substrate processing apparatus in accordance with an exemplary embodiment includes a seat on which a substrate is seated, a stage configured to support the seat, a processing chamber disposed on the stage to accommodate the seat therein, and a substrate moving unit disposed outside the processing chamber to support a lower portion of the stage and horizontally move the stage. Accordingly, in accordance with an exemplary embodiment, during a substrate heat treatment process, impurity particles generated by operation of a unit for moving the substrate may not be introduced into the processing chamber, and thus, the substrate may be prevented from being contaminated by the impurity particles.

Description

基底處理設備及基底處理方法Substrate processing equipment and substrate processing method

本發明是有關於一種基底處理設備,且特別是有關於一種能够减少由雜質粒子所造成的基底污染的基底處理設備。The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of reducing substrate contamination caused by impurity particles.

當製造液晶顯示設備、太陽能設備或類似者時,伴隨著用於使非晶形多晶薄膜(例如,非晶形多晶矽薄膜)結晶的熱處理工藝。此處,當將玻璃用作基底時,優選以雷射來使非晶形多晶薄膜結晶。When manufacturing a liquid crystal display device, a solar energy device, or the like, a heat treatment process for crystallizing an amorphous polycrystalline film (for example, an amorphous polycrystalline silicon film) is accompanied. Here, when glass is used as a substrate, the amorphous polycrystalline thin film is preferably crystallized by laser.

圖1爲雷射熱處理設備的示意圖。參看圖1,雷射熱處理設備包含:處理腔室10,其具有處理基底1的內部空間;透射窗40,其設置於處理腔室10的上部部分上以允許雷射8透射穿過其;基底移動裝置20,其設置於處理腔室10中對應發射窗40下的位置、且垂直移動和旋轉坐落於其上的基底1;以及光源30,其設置於處理腔室10外側的透射窗40上方,以輸出雷射8。根據以上描述的雷射熱處理設備,從光源30輸出的雷射8透射穿過透射窗40且輻射到水平移動的基底1。FIG. 1 is a schematic diagram of a laser heat treatment apparatus. Referring to FIG. 1, a laser heat treatment apparatus includes: a processing chamber 10 having an internal space of a processing substrate 1; a transmission window 40 provided on an upper portion of the processing chamber 10 to allow a laser 8 to transmit therethrough; a substrate A mobile device 20 is disposed in the processing chamber 10 under a corresponding emission window 40 and vertically moves and rotates the substrate 1 located thereon; and a light source 30 is disposed above the transmission window 40 outside the processing chamber 10 To output laser 8. According to the laser heat treatment apparatus described above, the laser 8 output from the light source 30 is transmitted through the transmission window 40 and radiated to the substrate 1 which is moved horizontally.

圖2爲用於解釋從圖1中的光源30輻射的雷射束的形狀的視圖,圖2(a)爲說明從其上看的基底的視圖。如圖2中所說明,雷射束8以綫形輻射到基底1上。隨著基底1在垂直於雷射束8的綫的方向(箭頭方向)上水平移動。FIG. 2 is a view for explaining a shape of a laser beam radiated from the light source 30 in FIG. 1, and FIG. 2 (a) is a view illustrating a substrate viewed therefrom. As illustrated in FIG. 2, the laser beam 8 is radiated onto the substrate 1 in a linear shape. As the substrate 1 moves horizontally in a direction (arrow direction) perpendicular to the line of the laser beam 8.

移動基底的基底移動裝置包含:導引件部分,其在X軸方向上延伸且包含LM導軌(guide rail);第一軸向移動平台,其在與導引件部分交叉的方向(即,Y軸方向)上延伸以沿著導引件部分水平移動;第一空氣軸承(air bearing),其安裝於第一軸向移動平台的下部部分上;第二軸向移動平台,其安裝於第一軸向移動平台上以沿著第一軸向移動平台的延伸方向移動;以及第二空氣軸承,其安裝於上第二軸向移動平台的下部部分上。並且,提供設置於第一移動平台的內中心部分上的旋轉軸導引件(rotation shaft guide),且將其上坐落基底的載台提供於旋轉軸導引件上。此處,第一和第二軸承中的每一個爲向下噴灑空氣以通過氣壓在非接觸狀態中浮動的單元。The substrate moving device for moving the substrate includes a guide part extending in the X-axis direction and including an LM guide rail, and a first axial moving platform in a direction crossing the guide part (ie, Y Axis direction) to move horizontally along the guide part; a first air bearing mounted on the lower portion of the first axial moving platform; a second axial moving platform mounted on the first The axially moving platform moves along the extending direction of the first axially moving platform; and a second air bearing is mounted on a lower portion of the upper second axially moving platform. In addition, a rotation shaft guide provided on an inner center portion of the first moving platform is provided, and a carrier on which a base is located is provided on the rotation shaft guide. Here, each of the first and second bearings is a unit that sprays air downward to float in a non-contact state by air pressure.

根據以上描述的基底移動裝置,當基底坐落於載台上時,第一軸向移動平台沿著導引件部分(也就是LM導軌)在X軸方向上水平移動,且第二軸杆水平移動平台在Y軸方向(也就是第一移動平台的延伸方向)上水平移動。並且,第二水平移動平台通過旋轉軸導引件旋轉。According to the substrate moving device described above, when the substrate is seated on the stage, the first axial moving platform moves horizontally in the X-axis direction along the guide part (ie, the LM guide), and the second shaft moves horizontally. The platform moves horizontally in the Y-axis direction (that is, the extension direction of the first moving platform). And, the second horizontal moving platform is rotated by a rotation shaft guide.

同時,第一和第一移動平台中的每一個通過空氣軸承移動,並且,在此時刻,由於粒子因噴灑的氣壓被吹到周圍而附著到基底,基底被污染。At the same time, each of the first and first moving platforms is moved by an air bearing, and, at this time, the substrate is contaminated because the particles are attached to the substrate due to the sprayed air pressure being blown to the surroundings.

然而,處理腔室覆蓋至少整個基底移動裝置。因此,驅動基底移動裝置的空氣軸承所産生的粒子被吹過整個處理腔室,且因此,粒子坐落於基底上而污染基底。However, the processing chamber covers at least the entire substrate moving device. Therefore, particles generated by the air bearing that drives the substrate moving device are blown through the entire processing chamber, and therefore, the particles are seated on the substrate and contaminate the substrate.

[先前文件] [專利文件] (專利文件1)韓國公開專利第2011-0010252號[Prior Documents] [Patent Documents] (Patent Document 1) Korean Published Patent No. 2011-0010252

本揭露內容提供一種基底處理設備,其能够减少由腔室中的粒子所產生的基底污染。The present disclosure provides a substrate processing apparatus capable of reducing substrate contamination caused by particles in a chamber.

本揭露內容還提供一種基底處理設備,其能够减少歸因於腔室的全部設備的重量所造成的製造成本的增加的。This disclosure also provides a substrate processing apparatus capable of reducing an increase in manufacturing costs due to the weight of the entire apparatus of the chamber.

本揭露內容還提供一種簡化的基底處理設備。The disclosure also provides a simplified substrate processing apparatus.

根據示範性實施例,一種基底處理設備包含:底座,基底坐落於其上;載台,其被配置以支撑所述底座;處理腔室,其設置於所述載台上以在其中容納所述底座;以及基底移動單元,其設置於所述處理腔室外側以支撑所述載台的下部部分且水平移動所述載台。According to an exemplary embodiment, a substrate processing apparatus includes: a base on which a substrate sits; a carrier configured to support the base; and a processing chamber provided on the carrier to receive the substrate therein. A base; and a base moving unit that is disposed outside the processing chamber to support a lower portion of the carrier and move the carrier horizontally.

所述基底移動單元可包含:導引件部分,其設置於所述處理腔室外側且在一個方向上延伸以提供水平移動力;以及轉移部分,所述載台設置於其上且其耦合到所述導引件部分以在所述導引件部分的延伸方向上水平移動。The substrate moving unit may include: a guide portion provided outside the processing chamber and extending in one direction to provide a horizontal moving force; and a transfer portion on which the stage is provided and coupled to The guide portion moves horizontally in an extending direction of the guide portion.

所述基底處理設備可更包含設置於所述導引件部分和所述轉移部分下方以支撑所述導引件部分的基底。The substrate processing apparatus may further include a substrate disposed under the guide portion and the transfer portion to support the guide portion.

所述導引件部分可包含一對導引件部分,其中的每一個在一個方向上延伸且相互並行地間隔開,所述轉移部分可在所述一對導引件部分相互間隔開所沿著的方向上延伸,且所述處理腔室可設置於所述一對導引件部分之間。The guide portion may include a pair of guide portions, each of which extends in one direction and is spaced apart from each other in parallel, and the transfer portion may be spaced apart from each other along the pair of guide portions. The processing chamber may be disposed between the pair of guide portions.

所述轉移部分可包含:轉移平台,其在所述一對導引件部分相互間隔開所沿著的所述方向上延伸,且具有連接到所述一對導引件部分的一端和另一端,以在所述一對導引件部分的所述延伸方向上水平移動,且所述載台安裝於其上;以及第一空氣軸承,其安裝於設置於所述處理腔室外側的所述轉移平台上以朝向所述基底噴灑空氣,使得所述轉移平台從所述基底浮動以滑動的方式移動。The transfer portion may include a transfer platform extending in the direction along which the pair of guide portions are spaced apart from each other, and having one end and the other end connected to the pair of guide portions, To move horizontally in the extension direction of the pair of guide parts, and the stage is mounted thereon; and a first air bearing installed to the transfer provided outside the processing chamber The platform is sprayed with air toward the substrate, so that the transfer platform floats from the substrate and moves in a sliding manner.

所述基底處理設備可更包含安裝於設置於所述處理腔室外側的所述轉移平台上以朝向所述導引件部分噴灑空氣的第二空氣軸承,使得所述轉移平台從所述導引件部分浮動以滑動的方式移動。The substrate processing apparatus may further include a second air bearing installed on the transfer platform provided outside the processing chamber to spray air toward the guide part, so that the transfer platform is guided from the guide The pieces float to move in a sliding manner.

所述轉移部分在對應於所述導引件部分的方向上可具有延伸長度,其小於所述導引件部分的延伸長度,且所述載台可具有延伸長度,在所述一對導引件部分相互間隔開所沿著的方向上,所述載台的延伸長度小於所述轉移部分的延伸長度,且在對應於所述導引件部分的方向上,所述載台的延伸長度等於或小於所述轉移部分的延伸長度的延伸長度。The transfer portion may have an extended length in a direction corresponding to the guide portion, which is smaller than the extended length of the guide portion, and the stage may have an extended length in the pair of guides. In the direction along which the parts are spaced apart from each other, the extension length of the carrier is smaller than the extension length of the transfer part, and in the direction corresponding to the guide part, the extension length of the carrier is equal to or An extension length smaller than the extension length of the transfer portion.

所述處理腔室可具有小於所述轉移部分的表面積且等於或大於所述載台的表面積的表面積。The processing chamber may have a surface area smaller than a surface area of the transfer portion and equal to or larger than a surface area of the stage.

所述基底處理設備可更包含管路部分,其具有設置於所述處理腔室中的一端和延伸以連接到幫浦的另一端,以通過使用所述幫浦的抽吸力調整所述處理腔室的內壓。The substrate processing apparatus may further include a pipe portion having one end provided in the processing chamber and the other end extending to be connected to a pump to adjust the processing by using a suction force of the pump Internal pressure of the chamber.

所述管路部分可包含:第一延伸部分,其從所述處理腔室的內部向下延伸;以及第一管路部件,其在對應於所述導引件部分的方向上延伸,且具有連接到所述第一延伸部分的一端和連接到所述幫浦的另一端,並通過從外面傳輸的力延伸和收縮,以變化其長度或形狀。The pipeline portion may include: a first extension portion extending downward from the inside of the processing chamber; and a first pipeline member extending in a direction corresponding to the guide portion, and having One end connected to the first extension portion and the other end connected to the pump are extended and contracted by a force transmitted from the outside to change its length or shape.

所述管路部分可包含第二管路部件,其連接到所述第一管路部件,且所述第一管路部件和所述第二管路部件中的每一個可被提供多個,使得所述第一管路部件與所述第二管路部件交替地設置若干次。The pipeline part may include a second pipeline part connected to the first pipeline part, and each of the first pipeline part and the second pipeline part may be provided in plurality, The first pipeline part and the second pipeline part are arranged alternately several times.

所述第二管路部件可包含波紋管(bellows)。The second pipeline part may include bellows.

根據另一示範性實施例,一種基底處理方法包含:讓基底坐落於設置在處理腔室中的底座上;朝所述基底輻射光;以及水平地移動設置於所述處理腔室外側以支撑所述處理腔室和所述底座的載台,以將所述處理腔室和所述底座與所述載台一起水平移動。According to another exemplary embodiment, a substrate processing method includes: arranging a substrate on a base disposed in a processing chamber; radiating light toward the substrate; and horizontally moving the substrate outside the processing chamber to support the substrate. The processing chamber and the carrier of the base to move the processing chamber and the base horizontally together with the carrier.

可通過操作安裝於所述載台下方的轉移部分的方式,使得所述載台沿著設置於所述處理腔室外側且在一個方向上延伸的導引件部分水平移動,以執行所述載台的所述水平地移動。The carrier can be moved horizontally along a guide portion provided outside the processing chamber and extending in one direction by operating a transfer portion installed below the carrier to execute the carrier. The table moves horizontally.

可通過從基底和導引件部分浮動所述載台的方式,使得被配置來朝向裝設於所述轉移部分下方的所述基底和所述導引件部分中的每一個噴灑空氣的空氣軸承水平移動,以執行所述載台的所述水平地移動。An air bearing configured to spray air toward each of the base and the guide portion provided below the transfer portion may be made by floating the stage from a base and a guide portion Horizontal movement to perform the horizontal movement of the stage.

所述基底處理方法可更包含在將光輻射到所述基底且水平移動所述處理腔室和所述底座的同時,調整所述處理腔室的內壓,其中可通過操作幫浦來抽吸延伸設置於所述處理腔室內部的管路部分的一端的方式,以執行所述處理腔室的所述內壓的所述調整,且當所述處理腔室和所述底座水平移動時,所述管路部分在所述處理腔室和所述底座的水平移動方向上延伸或收縮。The substrate processing method may further include adjusting the internal pressure of the processing chamber while radiating light to the substrate and horizontally moving the processing chamber and the base, wherein suction can be performed by operating a pump A manner of extending at one end of a pipe portion inside the processing chamber to perform the adjustment of the internal pressure of the processing chamber, and when the processing chamber and the base move horizontally, The pipeline portion extends or contracts in a horizontal moving direction of the processing chamber and the base.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.

下文,將詳細描述本發明的實施例。然而,本發明可以不同的形式來體現,且不應解釋爲限於本文中闡述的實施例。而是,提供這些實施例以使得本揭露內容將透徹且完整,並且這些實施例將向所屬領域的技術人員充分傳達本發明的範圍。Hereinafter, embodiments of the present invention will be described in detail. The invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and these embodiments will fully convey the scope of the invention to those skilled in the art.

圖3爲說明根據示範性實施例的包含處理腔室和大氣創造部分(atmosphere creating part)的基底處理設備的三維圖。圖4爲從轉移部分沿著導引件部分移動的方向(即,掃描方向)截取的橫截面圖。圖5爲從與掃描方向或轉移部分的延伸方向交叉的方向截取的橫截面圖。圖6爲說明根據示範性實施例的基底處理設備的主要部分的俯視圖。FIG. 3 is a three-dimensional view illustrating a substrate processing apparatus including a processing chamber and an atmosphere creating part according to an exemplary embodiment. FIG. 4 is a cross-sectional view taken from a direction in which the transfer portion moves along the guide portion (ie, a scanning direction). FIG. 5 is a cross-sectional view taken from a direction crossing the scanning direction or the extending direction of the transfer portion. FIG. 6 is a top view illustrating a main part of a substrate processing apparatus according to an exemplary embodiment.

根據示範性實施例的基底處理設備爲用於通過將雷射輻射在基底上來熱處理基底,或設置於基底上的薄膜的熱處理設備。更詳細地,根據示範性實施例的基底處理設備爲用於將雷射輻射在設置於基底上的非晶形薄膜上以使非晶形薄膜結晶的雷射結晶設備。The substrate processing apparatus according to an exemplary embodiment is a heat treatment apparatus for heat-treating a substrate by radiating laser light on the substrate, or a thin film provided on the substrate. In more detail, the substrate processing apparatus according to an exemplary embodiment is a laser crystallization apparatus for radiating laser light on an amorphous thin film provided on a substrate to crystallize the amorphous thin film.

下文,將參看圖3到圖6詳細地描述根據示範性實施例的基底處理設備。Hereinafter, a substrate processing apparatus according to an exemplary embodiment will be described in detail with reference to FIGS. 3 to 6.

參看圖3到圖6,根據示範性實施例的基底處理設備包含:底座300,基底S坐落於其上;載台500,其支撑設置於其上的底座300;基底移動單元400,其在水平方向上移動載台500且在旋轉載台500的同時來將其移動;處理腔室200,其具有具內部空間的薄容器形狀且設置於載台500上以包圍底座300;光源700,其設置於處理腔室200上方以在朝向底座300的方向上輻射雷射;大氣創造單元600,其延伸到處理腔室200的內部以創造用於在處理腔室200中處理基底的大氣;以及基底100,其被設置以支撑基底移動單元400的下部部分。3 to 6, a substrate processing apparatus according to an exemplary embodiment includes: a base 300 on which a substrate S sits; a stage 500 that supports the base 300 disposed thereon; and a substrate moving unit 400 that is horizontal The stage 500 is moved in the direction and is moved while the stage 500 is rotated; the processing chamber 200 has a thin container shape with an internal space and is disposed on the stage 500 to surround the base 300; the light source 700, which is provided Over the processing chamber 200 to radiate a laser in a direction toward the base 300; an atmosphere creating unit 600 extending to the inside of the processing chamber 200 to create an atmosphere for processing a substrate in the processing chamber 200; and the substrate 100 It is provided to support a lower portion of the substrate moving unit 400.

基底100被設置以支撑基底移動單元400的下部部分。此處,基底100具有等於或大於基底移動單元400的全部表面積的表面積,使得基底100能够穩定地支撑設置於其上的全部基底移動單元400。雖然根據示範性實施例的基底100具有大致矩形或板的橫截面形狀,但示範性實施例不限於此。舉例來說,基底100可具有能够支撑基底移動單元400的任何形狀。The substrate 100 is provided to support a lower portion of the substrate moving unit 400. Here, the substrate 100 has a surface area equal to or larger than the entire surface area of the substrate moving unit 400, so that the substrate 100 can stably support all the substrate moving units 400 provided thereon. Although the substrate 100 according to the exemplary embodiment has a substantially rectangular or plate cross-sectional shape, the exemplary embodiment is not limited thereto. For example, the substrate 100 may have any shape capable of supporting the substrate moving unit 400.

並且,稍後將描述的大氣創造單元600的一部分插入到的凹槽110(下文被稱作插入凹槽)界定於基底100中。此處,插入凹槽110在掃描方向或基底S水平地移動以用於熱處理所沿著的方向上延伸。And, a groove 110 (hereinafter referred to as an insertion groove) into which a part of the atmosphere creation unit 600 described later is inserted is defined in the substrate 100. Here, the insertion groove 110 extends horizontally in a scanning direction or a direction along which the substrate S is moved for the heat treatment.

根據示範性實施例的基底移動單元400允許載台500和設置於載台500上的處理腔室200水平移動和旋轉。以上描述的基底移動單元400包含:一對導引件部分410,其中的每一個在一個方向上(例如,Y軸方向)延伸且其相互面對;以及轉移部分420,其在與導引件部分410交叉的方向(例如,X軸方向)上延伸,且具有分別連接到導引件部分410的一端和另一端以便在導引件部分410的延伸方向上可移動。The substrate moving unit 400 according to the exemplary embodiment allows the stage 500 and the processing chamber 200 provided on the stage 500 to move and rotate horizontally. The substrate moving unit 400 described above includes: a pair of guide portions 410, each of which extends in one direction (eg, the Y-axis direction) and faces each other; and a transfer portion 420, which is in contact with the guide The portions 410 cross in a direction (for example, the X-axis direction) and have one end and the other end respectively connected to the guide portion 410 so as to be movable in the extending direction of the guide portion 410.

所述一對導引件部分410中的每一個在基底S水平移動以用於熱處理所沿著的方向(例如,Y軸方向)上延伸。並且,所述一對導引件部分410在X軸方向相互間隔開以相互面對。此處,如上所述,在熱處理過程期間,基底S在所述一對導引件部分410的延伸方向上延伸,其可由“掃描移動”來標示。並且,導引件部分的延伸方向(即,在Y軸方向上延伸的方向)可由掃描方向來標示。Each of the pair of guide portions 410 extends in a direction (for example, a Y-axis direction) along which the substrate S is horizontally moved for heat treatment. And, the pair of guide portions 410 are spaced apart from each other in the X-axis direction to face each other. Here, as described above, during the heat treatment process, the substrate S extends in the extending direction of the pair of guide portions 410, which can be marked by "scanning movement". And, the extending direction of the guide portion (that is, the direction extending in the Y-axis direction) can be indicated by the scanning direction.

根據示範性實施例的所述一對導引件部分410中的每一個在Y軸方向上具有延伸長度,其對應於基底100的延伸長度或比其小的預定長度。Each of the pair of guide portions 410 according to an exemplary embodiment has an extension length in the Y-axis direction, which corresponds to the extension length of the substrate 100 or a predetermined length smaller than the extension length.

導引件部分410包含在Y軸方向上延伸的導引件主體411,和在導引件主體411上在導引件主體411的延伸方向上延伸的導引部件412以導引稍後將描述的轉移部分的移動。The guide portion 410 includes a guide main body 411 extending in the Y-axis direction, and a guide member 412 extending on the guide main body 411 in an extending direction of the guide main body 411 to guide will be described later The moving part of the shift.

導引部件412設置於導引件主體411上以提供轉移部分420的水平移動力。導引部件412包含綫圈(未繪示),和稍後將描述的通過提供到綫圈的電流水平移動的轉移平台421。The guide member 412 is provided on the guide body 411 to provide a horizontal moving force of the transfer portion 420. The guide member 412 includes a coil (not shown), and a transfer platform 421 that is horizontally moved by a current supplied to the coil, which will be described later.

轉移部分420在所述一對導引件部分相互間隔開所沿著的方向(即,X軸方向)上延伸且被耦合以連接到所述一對導引件部分410以在導引件部分410的延伸方向上水平移動。轉移部分420包含:轉移平台421,其在X軸方向上延伸;可移動主體422,其設置在轉移平台421的兩端(於X軸延伸方向上的兩端)中的每一個上,以具有用於沿著導引部件412移動的驅動力;第一空氣軸承423a,其安裝於轉移平台421上以在朝向基底100的方向上噴灑空氣;和第二空氣軸承423b,其安裝於轉移平台421上以在朝嚮導引部件412的方向上噴灑空氣。The transfer portion 420 extends in a direction (ie, the X-axis direction) along which the pair of guide portions are spaced apart from each other and is coupled to be connected to the pair of guide portions 410 to be in the guide portions 410. Move horizontally in the direction of extension. The transfer portion 420 includes: a transfer platform 421 that extends in the X-axis direction; and a movable body 422 that is provided on each of both ends (both ends in the X-axis extension direction) of the transfer platform 421 to have A driving force for moving along the guide member 412; a first air bearing 423a mounted on the transfer platform 421 to spray air in a direction toward the substrate 100; and a second air bearing 423b mounted on the transfer platform 421 The upper part is sprayed with air in a direction toward the guide member 412.

轉移平台421具有預定表面積,載台500能够坐落於其上且在X軸方向(即,所述一對導引件部分410相互間隔開所沿著的方向)上延伸。並且,轉移平台421具有連接到所述一對導引件部分410中的一個的一端和連接到所述一對導引件部分410中的另一個的另一端。此處,在示範性實施例中,轉移平台421具有放在或擺置在導引件主體411的上部部分上且耦合到導引件主體411的一端和另一端。並且,轉移平台421可具有與基底100間隔開預定距離的下部部分。The transfer platform 421 has a predetermined surface area on which the stage 500 can be seated and extend in the X-axis direction (that is, a direction along which the pair of guide portions 410 are spaced apart from each other). And, the transfer platform 421 has one end connected to one of the pair of guide portions 410 and the other end connected to the other of the pair of guide portions 410. Here, in the exemplary embodiment, the transfer platform 421 has one end and the other end placed or placed on the upper portion of the guide body 411 and coupled to the guide body 411. And, the transfer platform 421 may have a lower portion spaced apart from the substrate 100 by a predetermined distance.

可移動主體422在轉移平台421的延伸方向或導引部件的延伸方向上延伸以沿著導引部件412水平移動。以上描述的可移動主體422耦合到導引部件412以具有插入到導引部件412內的至少一部分。舉例來說,將N極磁體與S極磁體多次交替地設置的磁體部分裝設於可移動主體422上。The movable body 422 extends in an extension direction of the transfer platform 421 or an extension direction of the guide member to move horizontally along the guide member 412. The movable body 422 described above is coupled to the guide member 412 to have at least a portion inserted into the guide member 412. For example, a magnet portion in which N-pole magnets and S-pole magnets are alternately disposed multiple times is mounted on the movable body 422.

根據可移動主體422和導引部件412,當將交變電流施加到設置於導引部件412上的綫圈時,可移動主體422通過信號沿著導引部件412前後移動。According to the movable body 422 and the guide member 412, when an alternating current is applied to a coil provided on the guide member 412, the movable body 422 moves back and forth along the guide member 412 by a signal.

在上文中,描述綫圈設置於導引部件上,且將N極與S極交替地設置於可移動主體中。然而,示範性實施例不限於此。舉例來說,可將能够水平地移動轉移平台的各種單元應用爲導引部件和可移動主體。舉例來說,導引部件爲LM導軌,且可移動主體可爲能够沿著LM導軌滑動的單元,例如,綫性電動機(linear motor)。In the above, it is described that the coil is provided on the guide member, and the N pole and the S pole are alternately provided in the movable body. However, the exemplary embodiment is not limited thereto. For example, various units capable of horizontally moving the transfer platform can be applied as a guide member and a movable body. For example, the guide member is an LM guide, and the movable body may be a unit capable of sliding along the LM guide, such as a linear motor.

第一空氣軸承423a允許轉移平台421在非接觸狀態中從基底浮動,且安裝於轉移平台421上以面對基底100。舉例來說,第一空氣軸承423a可被提供多個,且設置於轉移平台的Y軸延伸方向的側表面上。多個第一空氣軸承423a中的每一個向下噴灑空氣。此處,基底100的頂表面爲空氣噴灑的表面,且轉移部分420借助於噴灑到基底100的頂表面的空氣的壓力(即,氣壓)從基底100的頂表面浮動。The first air bearing 423a allows the transfer platform 421 to float from the substrate in a non-contact state, and is mounted on the transfer platform 421 to face the substrate 100. For example, a plurality of first air bearings 423a may be provided and disposed on a side surface in the Y-axis extension direction of the transfer platform. Each of the plurality of first air bearings 423a sprays air downward. Here, the top surface of the substrate 100 is an air-sprayed surface, and the transfer portion 420 floats from the top surface of the substrate 100 by the pressure (ie, air pressure) of the air sprayed onto the top surface of the substrate 100.

第二空氣軸承423b允許轉移平台421從導引部件412浮動且安裝於轉移平台421上以面對導引部件412。第二空氣軸承423b設置於轉移平台421的在X軸延伸方向上的兩個側表面中的每一個上,以朝向導引部件412噴灑空氣。此處,導引部件412的側表面爲空氣噴灑的表面,且轉移平台421借助於噴灑到導引部件412的側表面的空氣的壓力從導引部件412的側表面浮動。The second air bearing 423b allows the transfer platform 421 to float from the guide member 412 and is mounted on the transfer platform 421 to face the guide member 412. The second air bearing 423b is provided on each of two side surfaces of the transfer platform 421 in the X-axis extension direction to spray air toward the guide member 412. Here, the side surface of the guide member 412 is an air sprayed surface, and the transfer platform 421 floats from the side surface of the guide member 412 by the pressure of the air sprayed on the side surface of the guide member 412.

當可移動主體422在從第一空氣軸承423a和第二空氣軸承423b噴灑空氣的狀態中操作時,以上描述的轉移平台421沿著導引件部分水平移動。When the movable body 422 is operated in a state where air is sprayed from the first air bearing 423a and the second air bearing 423b, the above-described transfer platform 421 moves horizontally along the guide portion.

載台500設置於轉移部分420上,以在處理腔室200和底座300設置於其上的狀態中,與轉移部分420一起在掃描方向(即,Y軸方向)上水平移動。以上描述的載台500包含安裝於轉移部分420上且能够旋轉的旋轉主體520,和設置於旋轉主體520上且具有其上支撑和裝設底座300和處理腔室200的上部部分的支撑件510。The stage 500 is provided on the transfer portion 420 to move horizontally in the scanning direction (ie, the Y-axis direction) together with the transfer portion 420 in a state where the processing chamber 200 and the base 300 are provided thereon. The stage 500 described above includes the rotating body 520 mounted on the transfer portion 420 and capable of rotating, and the support 510 provided on the rotating body 520 and having an upper portion supporting and mounting the base 300 and the processing chamber 200 thereon. .

旋轉主體520設置於轉移部分420上以旋轉,且通過轉移部分420的操作,可水平地移動。以上描述的旋轉主體520可具有中空型板形狀,其具有打開的中心部分和其上裝設支撑件510的上部部分。旋轉主體520具有稍後將描述的大氣創造單元600的管路部分420通過的開口。The rotating body 520 is provided on the transfer portion 420 to rotate, and can be horizontally moved by an operation of the transfer portion 420. The rotating body 520 described above may have a hollow plate shape having an opened central portion and an upper portion on which the support 510 is mounted. The rotating body 520 has an opening through which the pipe section 420 of the atmosphere creating unit 600 will be described later.

雖然根據示範性實施例的旋轉主體520以交叉滾柱導引(cross-roller guide)方式旋轉,但示範性實施例不限於此。舉例來說,可將能够旋轉底座的各種單元應用爲旋轉主體。Although the rotating body 520 according to the exemplary embodiment is rotated in a cross-roller guide manner, the exemplary embodiment is not limited thereto. For example, various units capable of rotating a base can be applied as a rotating body.

安裝於旋轉主體520上的支撑件510能够由旋轉主體520旋轉且由轉移部分420水平移動。並且,支撑件510在掃描方向上與轉移部分420一起水平移動,同時將底座300和處理腔室安裝和裝設於支撑板510上方。根據示範性實施例支撑件510具有中空型板形狀,其具有管路部分420穿過的開口,和大於旋轉主體520的表面積的表面積。替代地,支撑件510可具有等於或小於旋轉主體的表面積的表面積。The support 510 mounted on the rotating body 520 can be rotated by the rotating body 520 and horizontally moved by the transfer portion 420. Also, the support 510 moves horizontally with the transfer portion 420 in the scanning direction, and simultaneously mounts and mounts the base 300 and the processing chamber above the support plate 510. According to an exemplary embodiment, the supporter 510 has a hollow plate shape having an opening through which the pipe portion 420 passes, and a surface area larger than that of the rotating body 520. Alternatively, the support 510 may have a surface area equal to or smaller than the surface area of the rotating body.

並且,根據示範性實施例的支撑件510安裝於轉移平台421上方或插入到轉移平台421內。And, the supporter 510 according to the exemplary embodiment is installed above or inserted into the transfer platform 421.

如上所述,以上描述的載台500裝設於轉移部分420上。根據示範性實施例的載台500具有小於轉移部分420的表面積的表面積。即,轉移部分420在相互間隔開的所述一對導引部件的間隔方向上延伸。因此,轉移部分420延伸至少多達在所述一對導引部件412之間的間隔距離(X軸方向)且小於導引件部分410的Y軸延伸長度。As described above, the carrier 500 described above is mounted on the transfer portion 420. The stage 500 according to the exemplary embodiment has a surface area smaller than that of the transfer portion 420. That is, the transfer portion 420 extends in the interval direction of the pair of guide members spaced apart from each other. Therefore, the transfer portion 420 extends at least as much as the separation distance (X-axis direction) between the pair of guide members 412 and is smaller than the Y-axis extension length of the guide portion 410.

載台500裝設於轉移部分420上且具有小於轉移部分420的表面積的表面積。即,載台500在X軸方向上小於轉移部分的延伸長度,且在Y軸方向上小於導引部件412的延伸長度。此處,載台500可具有等於或小於轉移部分420的Y軸延伸長度的Y軸延伸長度。The stage 500 is mounted on the transfer portion 420 and has a surface area smaller than the surface area of the transfer portion 420. That is, the stage 500 is smaller in the X-axis direction than the extended length of the transfer portion, and smaller than the extended length of the guide member 412 in the Y-axis direction. Here, the stage 500 may have a Y-axis extension length equal to or smaller than a Y-axis extension length of the transfer portion 420.

根據示範性實施例的載台500可包含旋轉主體520和裝設於旋轉主體520上的支撑件510,且支撑件510可具有大於旋轉主體的表面積的表面積。The stage 500 according to an exemplary embodiment may include a rotating body 520 and a supporter 510 installed on the rotating body 520, and the supporter 510 may have a surface area larger than a surface area of the rotating body.

載台500具有小於轉移部分420的表面積的表面積的狀態可表示支撑件510的X軸延伸長度小於轉移部分420的X軸延伸長度,且支撑件510的Y軸延伸長度等於或小於轉移部分420的Y軸延伸長度。A state where the stage 500 has a surface area smaller than the surface area of the transfer portion 420 may indicate that the X-axis extension length of the support 510 is smaller than the X-axis extension length of the transfer portion 420, and the Y-axis extension length of the support 510 is equal to or smaller than that of the transfer portion 420. Y-axis extension length.

替代地,支撑件510的Y軸延伸長度可大於轉移部分420的Y軸延伸長度,且小於導引件部分410的Y軸延伸長度。Alternatively, the Y-axis extension length of the support member 510 may be larger than the Y-axis extension length of the transfer portion 420 and smaller than the Y-axis extension length of the guide portion 410.

底座300裝設於載台500上,具有支撑基底S的頂表面,且與載台500一起水平移動或旋轉。底座300在對應於基底S的方向上延伸,且包含與支撑件510向上間隔開的底座部件310,和將底座部件310與支撑件510相互連接以支撑底座部件310,使得底座部件310設置於支撑件510上方的支撑部件320。底座部件310設置於窗W下方以對應於其,且底座部件310具有等於或大於基底S的表面積的表面積。底座部件310與載台500由支撑部件320向上間隔開。此處,底座部件310與載台500向上間隔開的原因是,稍後將描述的大氣創造單元600的一部分插入到載台500與底座部件310之間的空間內。The base 300 is mounted on the stage 500, has a top surface supporting the base S, and moves or rotates horizontally with the stage 500. The base 300 extends in a direction corresponding to the base S and includes a base member 310 spaced upward from the support 510 and interconnects the base member 310 and the support 510 to support the base member 310 so that the base member 310 is disposed on the support. Piece 510 above the support member 320. The base member 310 is disposed below the window W to correspond thereto, and the base member 310 has a surface area equal to or larger than that of the substrate S. The base member 310 and the stage 500 are spaced upward from the support member 320. Here, the reason why the base member 310 is spaced upward from the stage 500 is that a part of the atmosphere creation unit 600 which will be described later is inserted into the space between the stage 500 and the base member 310.

如上所述,底座300坐落於載台500上,且具有小於載台500的表面積的表面積。更詳細地,底座300具有小於支撑件510的表面積的表面積。自然地,底座300可具有大於支撑件的表面積的表面積。As described above, the base 300 is seated on the stage 500 and has a surface area smaller than the surface area of the stage 500. In more detail, the base 300 has a surface area smaller than that of the support 510. Naturally, the base 300 may have a surface area larger than that of the support.

當將底座300的表面積與轉移部分420的表面積比較時,底座300可具有小於轉移部分420的X軸延伸長度且等於或小於轉移部分420的Y軸延伸長度的X軸延伸長度。When comparing the surface area of the base 300 with the surface area of the transfer portion 420, the base 300 may have an X-axis extension length that is less than the X-axis extension length of the transfer portion 420 and equal to or less than the Y-axis extension length of the transfer portion 420.

處理腔室200設置於載台500上以覆蓋底座300。舉例來說,處理腔室200固定於支撑件510上,且根據轉移部分420的操作,沿著掃描方向水平移動。The processing chamber 200 is disposed on the stage 500 to cover the base 300. For example, the processing chamber 200 is fixed on the support 510 and moves horizontally along the scanning direction according to the operation of the transfer portion 420.

處理腔室200具有容器形狀,其具有內部空間,且窗W(從光源發射的光(例如,雷射)可透射穿過所述窗W)設置於光源與底座部件310之間。換句話說,窗裝設於處理腔室200上的底座300上方以對應於底座300。並且,基底S能够穿過其被插入和取出的門210界定於處理腔室200中。The processing chamber 200 has a container shape having an internal space, and a window W (light (for example, laser) emitted from the light source can be transmitted through the window W) is provided between the light source and the base member 310. In other words, a window is installed above the base 300 on the processing chamber 200 to correspond to the base 300. And, a door 210 through which the substrate S can be inserted and removed is defined in the processing chamber 200.

處理腔室200被製造以在X軸和Y軸方向中的每一個上具有等於載台500的延伸長度或比載台500的延伸長度小的預定長度的延伸長度。詳細地,處理腔室200安裝於支撑件510上而非載台500上。The processing chamber 200 is manufactured to have an extension length equal to or smaller than the extension length of the stage 500 in each of the X-axis and Y-axis directions. In detail, the processing chamber 200 is mounted on the support 510 instead of the stage 500.

因此,關於處理腔室200,轉移部分420的至少一部分和所述一對導引件部分410中的每一個設置於處理腔室200外側。並且,轉移部分420的第一空氣軸承423a和第二空氣軸承423b以及沿著導引件部分410移動的可移動主體422設置於處理腔室200外側。因此,根據示範性實施例的處理腔室200裝設於爲水平移動的可移動主體的載台500上,且具有小的尺寸(size)以緊凑地覆蓋底座和載台500的頂表面。Therefore, regarding the processing chamber 200, at least a portion of the transfer portion 420 and each of the pair of guide portions 410 are provided outside the processing chamber 200. Also, the first air bearing 423 a and the second air bearing 423 b of the transfer portion 420 and the movable body 422 moving along the guide portion 410 are disposed outside the processing chamber 200. Therefore, the processing chamber 200 according to the exemplary embodiment is mounted on a stage 500 of a movable body that is horizontally moved, and has a small size to compactly cover the base and the top surface of the stage 500.

與常規處理腔室相比,根據示範性實施例的以上描述的處理腔室200具有極少或不具有用於産生粒子的因素。即,雖然根據示範性實施例的處理腔室200固定於載台500上且在其中容納底座300,但由於允許載台水平移動的第一空氣軸承423a和第二空氣軸承423b、可移動主體422和導引部件412設置於處理腔室200外側,因此與常規處理腔室相比,粒子較少由用於水平移動的組件(例如,空氣軸承)産生。Compared to a conventional processing chamber, the processing chamber 200 described above according to an exemplary embodiment has little or no factors for generating particles. That is, although the processing chamber 200 according to the exemplary embodiment is fixed on the stage 500 and houses the base 300 therein, since the first air bearing 423a and the second air bearing 423b and the movable body 422 that allow the stage to move horizontally Since the guide member 412 is provided outside the processing chamber 200, particles are less generated by a component (for example, an air bearing) for horizontal movement compared to a conventional processing chamber.

並且,由於根據示範性實施例的處理腔室200具有小於常規處理腔室的內容積的內容積,因此粒子的量可减少多達减小的容積。Also, since the processing chamber 200 according to the exemplary embodiment has an inner volume smaller than that of a conventional processing chamber, the amount of particles may be reduced by as much as a reduced volume.

根據根據示範性實施例的基底處理設備,可防止基底被處理腔室中的粒子污染,這與常規處理腔室不同。According to the substrate processing apparatus according to the exemplary embodiment, it is possible to prevent the substrate from being contaminated by particles in the processing chamber, which is different from a conventional processing chamber.

大氣創造單元600爲用於創造用於在處理腔室200中實施熱處理工藝的工藝條件(即,真空氣氛)的單元。大氣創造單元600包含:幫浦610,其提供抽吸力以用於創造真空;管路部分620,其延伸以具有連接到處理腔室200的一端和連接到幫浦610的另一端,由此將幫浦610的抽吸力傳輸到處理腔室200;以及饋通(feed-through),其設置於處理腔室200中的管路部分620的另一端周圍。The atmosphere creation unit 600 is a unit for creating process conditions (ie, a vacuum atmosphere) for performing a heat treatment process in the processing chamber 200. The atmosphere creation unit 600 includes: a pump 610 that provides a suction force for creating a vacuum, and a pipe portion 620 that extends to have one end connected to the processing chamber 200 and the other end connected to the pump 610, thereby The suction force of the pump 610 is transmitted to the processing chamber 200; and a feed-through is provided around the other end of the pipe portion 620 in the processing chamber 200.

幫浦610設置於基底100外側或基底100上。雖然根據示範性實施例的基底爲旋轉幫浦,但示範性實施例不限於此,且可應用具有抽吸力以通過吸收處理腔室200的內部來創造真空氣氛的各種單元。The pump 610 is disposed outside or on the substrate 100. Although the substrate according to the exemplary embodiment is a rotary pump, the exemplary embodiment is not limited thereto, and various units having a suction force to create a vacuum atmosphere by absorbing the inside of the processing chamber 200 may be applied.

管路部分620延伸使得其另一端連接到幫浦,且其一端穿過基底100、轉移部分420和載台500且設置於處理腔室200中。此處,根據示範性實施例的管路部分620具有設置於處理腔室200中對應於底座部件310與載台500之間的間隔的空間的位置處的一端。The pipe portion 620 extends such that the other end thereof is connected to the pump, and one end thereof passes through the substrate 100, the transfer portion 420, and the stage 500 and is disposed in the processing chamber 200. Here, the pipe portion 620 according to the exemplary embodiment has one end provided at a position in the processing chamber 200 corresponding to a space between the base member 310 and the stage 500.

雖然管路部分620的一端設置於對應於底座部件310與載台500之間的間隔的空間的位置處,但示範性實施例不限於此,且管路部分620的一端可設置於處理腔室200中的任何位置處,例如,設置於處理腔室200中的底座300外側。Although one end of the pipeline portion 620 is disposed at a position corresponding to a space between the base member 310 and the stage 500, the exemplary embodiment is not limited thereto, and one end of the pipeline portion 620 may be disposed in the processing chamber At any position in 200, for example, provided outside the base 300 in the processing chamber 200.

如上所述,管路部分620延伸使得其至少一部分設置於處理腔室200中,且處理腔室200與載台500一起在處理腔室200安裝於載台500上的狀態中水平移動。因此,管路部分620有必要被設置以在處理腔室200的移動期間不阻止處理腔室200的移動。As described above, the pipeline portion 620 extends so that at least a part of it is disposed in the processing chamber 200, and the processing chamber 200 moves horizontally together with the stage 500 in a state where the processing chamber 200 is mounted on the stage 500. Therefore, it is necessary for the pipeline portion 620 to be provided so as not to prevent the movement of the processing chamber 200 during the movement of the processing chamber 200.

根據示範性實施例的管路部分620從處理腔室200的內部垂直延伸到基底100,且包含第一延伸部分621(包含管路部分620的一端)和第二延伸部分622,所述第二延伸部分在對應於載台的掃描方向的方向(即,Y軸方向)上延伸以具有連接到第一延伸部分621的一端和連接到幫浦610的另一端。The pipe portion 620 according to an exemplary embodiment extends vertically from the inside of the processing chamber 200 to the substrate 100 and includes a first extension portion 621 (including one end of the pipe portion 620) and a second extension portion 622, the second The extension portion extends in a direction (ie, the Y-axis direction) corresponding to the scanning direction of the stage to have one end connected to the first extension portion 621 and the other end connected to the pump 610.

第一延伸部分從處理腔室200的內部延伸以垂直穿過載台500和基底100的一部分。更詳細地,第一延伸部分621從處理腔室200的內部延伸以垂直穿過支撑件510、旋轉主體520、轉移平台421和基底100的部分。爲此,第一延伸部分621能够被插入以穿過的插入凹槽可界定於支撑件510、旋轉主體520、轉移平台421和基底100中的每一個中,且可同心地界定分別界定於支撑件510、旋轉主體520、轉移平台421和基底100中的插入凹槽。The first extension portion extends from the inside of the processing chamber 200 to vertically pass through the stage 500 and a portion of the substrate 100. In more detail, the first extension portion 621 extends from the inside of the processing chamber 200 to vertically pass through the support 510, the rotating body 520, the transfer platform 421, and the portion of the substrate 100. For this, an insertion groove through which the first extension portion 621 can be inserted to be passed may be defined in each of the support 510, the rotating body 520, the transfer platform 421, and the base 100, and may be concentrically defined respectively defined in the support The member 510, the rotating body 520, the transfer platform 421, and the insertion groove in the base 100.

以上描述的第一延伸部分621爲具有氣體移動通過的內部空間的管路,其可爲由(例如)金屬材料(例如,不銹鋼)製成的管路或管。此處,第一延伸部分621爲不能够延伸或接觸或在長度或形狀上不變化的管路。The first extension 621 described above is a pipe having an internal space through which a gas moves, which may be a pipe or a pipe made of, for example, a metal material (for example, stainless steel). Here, the first extension portion 621 is a pipe that cannot extend or contact or does not change in length or shape.

並且,第一延伸部分621具有對應於管路部分620的一端的一端,且第一延伸部分621的一端設置於底座部件310與旋轉主體520之間的間隔的空間中。此處,饋通630可設置於第一延伸部分621的設置於處理腔室200中的一端周圍,使得第一延伸部分621得以穩定地裝設,且饋通630安裝於底座部件310與旋轉主體520之間的旋轉主體520上,且具有中空形狀,所述中空形狀具有第一延伸部分621穿過的開口。Also, the first extension portion 621 has one end corresponding to one end of the pipe portion 620, and one end of the first extension portion 621 is disposed in a space between the base member 310 and the rotating body 520. Here, the feedthrough 630 may be disposed around an end of the first extension portion 621 provided in the processing chamber 200 so that the first extension portion 621 can be stably installed, and the feedthrough 630 is installed on the base member 310 and the rotating body The rotating body 520 between 520 has a hollow shape, and the hollow shape has an opening through which the first extension portion 621 passes.

第二延伸部分622在載台500的掃描方向(即,Y軸方向)上延伸且具有連接到第一延伸部分621的另一端的一端和連接到幫浦的另一端。此處,合乎需要地,第二延伸部分622的至少裝設於基底100內部的區域在Y軸方向上延伸。替代地,全部第二延伸部分622可在Y軸方向上延伸。The second extension portion 622 extends in the scanning direction (ie, the Y-axis direction) of the stage 500 and has one end connected to the other end of the first extension portion 621 and the other end connected to the pump. Here, desirably, at least a region of the second extension portion 622 installed inside the substrate 100 extends in the Y-axis direction. Alternatively, all the second extending portions 622 may extend in the Y-axis direction.

第二延伸部分622的延伸方向爲載台500在熱處理工藝期間水平移動所沿著的方向,且第二延伸部分622有必要對載台500的移動有可撓性。因此,在示範性實施例中,第二延伸部分622被配置以具有關於載台500的移動方向的可撓性。The extension direction of the second extension portion 622 is the direction along which the stage 500 moves horizontally during the heat treatment process, and the second extension portion 622 needs to be flexible to the movement of the stage 500. Therefore, in the exemplary embodiment, the second extension portion 622 is configured to have flexibility with respect to the moving direction of the stage 500.

即,第二延伸部分622具有提供第一管路部件622a和第二管路部件622b(其中的每一個具有內部空間且氣體能够穿過所述管路部件)的配置,且第一管路部件622a與第二管路部件622b交替地設置若干次。此處,第二延伸部分622b爲不能够延伸或接觸或在長度或形狀上不變化的管路。同時,第一管路部件622a可爲通過從外面傳輸的力延伸和收縮的管路,使得其長度或形狀有變化,例如,由金屬製成的波紋管型管路或波紋管。That is, the second extension portion 622 has a configuration that provides a first pipe member 622a and a second pipe member 622b (each of which has an internal space and gas can pass through the pipe member), and the first pipe member 622a and the second pipe member 622b are alternately provided several times. Here, the second extension portion 622b is a pipe that cannot extend or contact or does not change in length or shape. Meanwhile, the first pipe part 622a may be a pipe that is extended and contracted by a force transmitted from the outside, so that the length or shape thereof is changed, for example, a bellows-type pipe or bellows made of metal.

如上所述,因爲第二延伸部分622在Y軸方向上延伸且包含能够延伸且接觸的第一管路部件622,所以當處理腔室200和載台500在Y軸方向上移動時,大氣創造單元600可不中斷處理腔室200和載台的移動。As described above, because the second extension portion 622 extends in the Y-axis direction and includes the first pipe member 622 that can be extended and contacted, when the processing chamber 200 and the stage 500 move in the Y-axis direction, the atmosphere is created The unit 600 may not interrupt the movement of the processing chamber 200 and the stage.

即,當處理腔室200和載台500在基底熱處理工藝期間在掃描方向(Y軸方向)上移動時,相應地,管路部分620的第二延伸部分622接觸或延伸。換句話說,管路部分620根據處理腔室200和載台500在掃描方向(Y軸方向)上的移動和移動距離延伸或收縮以具有將變化的可撓性總長度。因此,管路部分620可可撓性地對應於處理腔室200的移動以創造或維持處於基底處理大氣的壓力下的處理腔室200的內部。That is, when the processing chamber 200 and the stage 500 are moved in the scanning direction (Y-axis direction) during the substrate heat treatment process, the second extension portion 622 of the pipe portion 620 contacts or extends accordingly. In other words, the pipe portion 620 is extended or contracted according to the moving and moving distance of the processing chamber 200 and the stage 500 in the scanning direction (Y-axis direction) to have a flexible total length that will change. Therefore, the pipeline portion 620 may flexibly correspond to the movement of the processing chamber 200 to create or maintain the inside of the processing chamber 200 under the pressure of the substrate processing atmosphere.

雖然如上所述通過將第一管路部件622a與第二管路部件622b交替地裝設若幹次來配置第二延伸部分622,但第二延伸部分622可只包含第一管路部件622a。Although the second extension portion 622 is configured by alternately mounting the first pipeline member 622a and the second pipeline member 622b several times as described above, the second extension portion 622 may include only the first pipeline member 622a.

並且,雖然第二延伸部分622包含如上所述的第一管路部件622a和第二管路部件622b,但示範性實施例不限於此,且第一延伸部分621可包含第一管路部件622a和第二管路部件622b。替代地,第一延伸部分621可只包含第一管路部件。Also, although the second extension portion 622 includes the first pipeline member 622a and the second pipeline member 622b as described above, the exemplary embodiment is not limited thereto, and the first extension portion 621 may include the first pipeline member 622a And the second pipe member 622b. Alternatively, the first extension portion 621 may include only the first pipe part.

如上所述,將第一延伸部分621的至少一部分和第二延伸部分622的至少一部分插入到基底內。因此,插入凹槽110界定於基底中,使得第一延伸部分621的至少所述部分和第二延伸部分622的至少一部分能够被插入。As described above, at least a portion of the first extension portion 621 and at least a portion of the second extension portion 622 are inserted into the substrate. Accordingly, the insertion groove 110 is defined in the base so that at least the portion of the first extension portion 621 and at least a portion of the second extension portion 622 can be inserted.

下文,將參看圖3到圖6描述根據示範性實施例的基底處理設備和基底處理方法的操作。此處,其上形成非晶矽薄膜的基底將被描述爲待處理的對象的實例。Hereinafter, operations of a substrate processing apparatus and a substrate processing method according to an exemplary embodiment will be described with reference to FIGS. 3 to 6. Here, the substrate on which the amorphous silicon thin film is formed will be described as an example of an object to be processed.

首先,待熱處理的基底S通過處理腔室200的門210被插入且坐落在底座300上。其後,轉移部分420水平移動,例如,沿著導引件部分410掃描,同時從光源700朝向基底S輻射雷射。從光源700發射的雷射穿過窗W,且輻射到設置於處理腔室200中的基底以通過根據基底S的掃描移動依序輻射雷射來使非晶形薄膜結晶。First, the substrate S to be heat-treated is inserted through the door 210 of the processing chamber 200 and sits on the base 300. Thereafter, the transfer portion 420 moves horizontally, for example, scans along the guide portion 410 while radiating a laser from the light source 700 toward the substrate S. The laser emitted from the light source 700 passes through the window W and is radiated to the substrate provided in the processing chamber 200 to crystallize the amorphous thin film by sequentially radiating the laser according to the scanning movement of the substrate S.

基底S坐落於其上的底座300坐落在載台500上以與載台500一起水平移動。並且,由於處理腔室200安裝於載台500上,因此底座300容納於處理腔室200中。因此,當載台500由轉移部分420轉移時,處理腔室200與載台500一起水平移動。The base 300 on which the base S sits is seated on the stage 500 to move horizontally with the stage 500. In addition, since the processing chamber 200 is mounted on the stage 500, the base 300 is accommodated in the processing chamber 200. Therefore, when the stage 500 is transferred by the transfer portion 420, the processing chamber 200 moves horizontally together with the stage 500.

並且,載台500由轉移部分420在掃描方向上轉移,且轉移轉移部分420的導引件部分、可移動主體和第一空氣軸承423a與第二空氣軸承423b裝設於處理腔室200外側。In addition, the stage 500 is transferred in the scanning direction by the transfer portion 420, and a guide portion, a movable body, and first and second air bearings 423a and 423b of the transfer and transfer portion 420 are installed outside the processing chamber 200.

即,當基底針對熱處理工藝水平移動時,用於産生驅動力以用於水平移動基底S的單元設置於處理腔室200外側且不設置於處理腔室200中。換句話說,處理腔室200覆蓋其上坐落基底S的底座300,且用於水平移動底座300的第一空氣軸承423a和第二空氣軸承423b設置於處理腔室200外側。That is, when the substrate is horizontally moved for the heat treatment process, a unit for generating a driving force for horizontally moving the substrate S is disposed outside the processing chamber 200 and is not disposed in the processing chamber 200. In other words, the processing chamber 200 covers the base 300 on which the substrate S is seated, and the first air bearing 423a and the second air bearing 423b for horizontally moving the base 300 are disposed outside the processing chamber 200.

因此,在基底熱處理工藝期間,由第一空氣軸承423a和第二空氣軸承423b産生的雜質粒子不會被引入到處理腔室200內,且因此,防止基底S受到雜質粒子污染。Therefore, during the substrate heat treatment process, the foreign particles generated by the first air bearing 423a and the second air bearing 423b are not introduced into the processing chamber 200, and therefore, the substrate S is prevented from being contaminated by the foreign particles.

並且,由於處理腔室具有小於常規處理腔室的容積的容積,因此,减小了熱處理設備的總重量。此外,由於在例如焊接的方法中處理腔室相互耦合到載台500上,因此用於將處理腔室200與載台500相互耦合到彼此的成本减少了,多達减小的容積。Also, since the processing chamber has a volume smaller than that of a conventional processing chamber, the total weight of the heat treatment equipment is reduced. In addition, since the processing chambers are coupled to each other on the stage 500 in a method such as welding, the cost for coupling the processing chamber 200 and the stage 500 to each other is reduced by as much as a reduced volume.

並且,常規地,裝設用於去除基底周圍的氧氣的氧氣部分除氣模塊以防止當將雷射輻射到基底時發生的氧化,且將氧氣部分除氣模塊裝設於處理腔室中的窗與底座之間。Also, conventionally, an oxygen partial degassing module for removing oxygen around the substrate is installed to prevent oxidation that occurs when laser is radiated to the substrate, and the oxygen partial degassing module is installed in a window in the processing chamber. And the base.

然而,根據示範性實施例,由於與常規處理腔室相比,處理腔室200在容積上减小了,因此可省略氧氣部分除氣模塊(oxygen partial degassing module;OPDM),且因此,可减少成本。However, according to an exemplary embodiment, since the processing chamber 200 is reduced in volume as compared to a conventional processing chamber, an oxygen partial degassing module (OPDM) may be omitted, and thus, it may be reduced cost.

儘管已經參考具體實施例描述了基底處理設備,但是其不限於此。因此,所屬技術領域中具有通常知識者將容易理解,在不脫離由所附申請專利範圍定義的本發明的精神和範圍的情况下,可以對其進行各種修改和改變。Although the substrate processing apparatus has been described with reference to specific embodiments, it is not limited thereto. Therefore, those having ordinary knowledge in the technical field will readily understand that various modifications and changes can be made to it without departing from the spirit and scope of the invention as defined by the scope of the appended application patents.

1‧‧‧基底1‧‧‧ substrate

8‧‧‧雷射8‧‧‧ laser

10‧‧‧處理腔室10‧‧‧Processing chamber

30‧‧‧光源30‧‧‧ light source

40‧‧‧透射窗40‧‧‧ transmission window

100‧‧‧基底100‧‧‧ substrate

110‧‧‧插入凹槽110‧‧‧ Insertion groove

200‧‧‧處理腔室200‧‧‧ treatment chamber

300‧‧‧底座300‧‧‧ base

310‧‧‧底座部件310‧‧‧base parts

320‧‧‧支撑部件320‧‧‧ support parts

400‧‧‧基底移動單元400‧‧‧ base movement unit

410‧‧‧導引件部分410‧‧‧Guide

411‧‧‧導引件主體411‧‧‧Guide body

412‧‧‧導引部件412‧‧‧Guide parts

420‧‧‧轉移部分420‧‧‧ transfer part

421‧‧‧轉移平台421‧‧‧ transfer platform

422‧‧‧可移動主體422‧‧‧movable subject

423a‧‧‧第一空氣軸承423a‧‧‧first air bearing

423b‧‧‧第二空氣軸承423b‧‧‧Second Air Bearing

500‧‧‧載台500‧‧‧ carrier

510‧‧‧支撑件510‧‧‧Support

520‧‧‧旋轉主體520‧‧‧rotating subject

600‧‧‧大氣創造單元600‧‧‧ Atmospheric Creation Unit

610‧‧‧幫浦610‧‧‧Pu

620‧‧‧管路部分620‧‧‧Piping section

621‧‧‧第一延伸部分621‧‧‧First extension

622‧‧‧第二延伸部分622‧‧‧second extension

622a‧‧‧第一管路部件622a‧‧‧first pipeline component

622b‧‧‧第二管路部件622b‧‧‧Second pipeline component

700‧‧‧光源700‧‧‧ light source

S‧‧‧基底S‧‧‧ substrate

W‧‧‧窗W‧‧‧ window

通過結合附圖進行的以下描述可更詳細地理解示範性實施例,其中: 圖1爲用於解釋常規雷射熱處理設備的視圖。 圖2爲用於解釋從圖1中的光源輻射的雷射束的形狀的視圖。 圖3爲說明根據示範性實施例的包含處理腔室和大氣創造部分的基底處理設備的三維圖。 圖4爲從轉移部分沿著導引件部分移動的方向(即,掃描方向)截取的橫截面圖。 圖5爲從與掃描方向或轉移部分的延伸方向交叉的方向截取的橫截面圖。 圖6爲說明根據示範性實施例的基底處理設備的主要部分的俯視圖。Exemplary embodiments can be understood in more detail through the following description taken in conjunction with the accompanying drawings, in which: FIG. 1 is a view for explaining a conventional laser heat treatment apparatus. FIG. 2 is a view for explaining a shape of a laser beam radiated from the light source in FIG. 1. FIG. 3 is a three-dimensional view illustrating a substrate processing apparatus including a processing chamber and an atmosphere creating portion according to an exemplary embodiment. FIG. 4 is a cross-sectional view taken from a direction in which the transfer portion moves along the guide portion (ie, a scanning direction). FIG. 5 is a cross-sectional view taken from a direction crossing the scanning direction or the extending direction of the transfer portion. FIG. 6 is a top view illustrating a main part of a substrate processing apparatus according to an exemplary embodiment.

Claims (16)

一種基底處理設備,包括: 底座,基底坐落於所述底座上;; 載台,被配置以支撑所述底座; 處理腔室,設置於所述載台上以在所述處理腔室中容納所述底座;以及 基底移動單元,設置於所述處理腔室外側以支撑所述載台的下部部分且水平移動所述載台。A substrate processing apparatus includes: a base, the substrate is seated on the base; a carrier configured to support the base; a processing chamber provided on the carrier to accommodate a housing in the processing chamber; The base; and a base moving unit, which is disposed outside the processing chamber to support a lower portion of the carrier and to move the carrier horizontally. 如申請專利範圍第1項所述的基底處理設備,其中所述基底移動單元包括: 導引件部分,設置於所述處理腔室外側且在一個方向上延伸以提供水平移動力;以及 轉移部分,所述載台設置於所述轉移部分上,且其耦合到所述導引件部分以在所述導引件部分的延伸方向上水平移動。The substrate processing apparatus according to item 1 of the scope of patent application, wherein the substrate moving unit includes: a guide portion provided outside the processing chamber and extending in one direction to provide a horizontal moving force; and a transfer portion The stage is disposed on the transfer portion, and is coupled to the guide portion to move horizontally in an extending direction of the guide portion. 如申請專利範圍第2項所述的基底處理設備,更包括設置於所述導引件部分和所述轉移部分下方以支撑所述導引件部分的基底。The substrate processing apparatus according to item 2 of the scope of patent application, further comprising a substrate provided below the guide portion and the transfer portion to support the guide portion. 如申請專利範圍第3項所述的基底處理設備,其中所述導引件部分包括一對導引件部分,所述一對導引件部分中的每一個在一個方向上延伸且相互並行地間隔開, 所述轉移部分在所述一對導引件部分相互間隔開所沿著的方向上延伸,且 所述處理腔室設置於所述一對導引件部分之間。The substrate processing apparatus according to item 3 of the patent application scope, wherein the guide portion includes a pair of guide portions, each of the pair of guide portions extending in one direction and in parallel with each other Spaced apart, the transfer portions extend in a direction along which the pair of guide portions are spaced apart from each other, and the processing chamber is disposed between the pair of guide portions. 如申請專利範圍第4項所述的基底處理設備,其中所述轉移部分包括: 轉移平台,所述轉移平台在所述一對導引件部分相互間隔開所沿著的所述方向上延伸,且具有連接到所述一對導引件部分的一端和另一端,以在所述一對導引件部分的所述延伸方向上水平移動,且所述載台安裝於所述轉移平台上;以及 第一空氣軸承,安裝於設置在所述處理腔室外側的所述轉移平台上以朝向所述基底噴灑空氣,使得所述轉移平台從所述基底浮動以滑動的方式移動。The substrate processing apparatus according to item 4 of the scope of patent application, wherein the transfer portion includes: a transfer platform extending in the direction along which the pair of guide portions are spaced apart from each other, and Having one end and the other end connected to the pair of guide portions to move horizontally in the extending direction of the pair of guide portions, and the stage is mounted on the transfer platform; and A first air bearing is installed on the transfer platform disposed outside the processing chamber to spray air toward the substrate, so that the transfer platform floats from the substrate and moves in a sliding manner. 如申請專利範圍第5項所述的基底處理設備,更包括安裝於設置在所述處理腔室外側的所述轉移平台上以朝向所述導引件部分噴灑空氣的第二空氣軸承,使得所述轉移平台從所述導引件部分浮動以滑動的方式移動。The substrate processing apparatus according to item 5 of the scope of patent application, further comprising a second air bearing installed on the transfer platform provided outside the processing chamber to spray air toward the guide part, so that The transfer platform floats from the guide part and moves in a sliding manner. 如申請專利範圍第2項所述的基底處理設備,其中所述轉移部分在對應於所述導引件部分的方向上具有延伸長度,所述轉移部分的延伸長度小於所述導引件部分的延伸長度,且 所述載台具有延伸長度,在所述一對導引件部分相互間隔開所沿著的方向上,所述載台的延伸長度小於所述轉移部分的延伸長度,且在對應於所述導引件部分的方向上,所述載台的延伸長度等於或小於所述轉移部分的延伸長度。The substrate processing apparatus according to item 2 of the scope of patent application, wherein the transfer portion has an extended length in a direction corresponding to the guide portion, and the extended length of the transfer portion is smaller than that of the guide portion An extension length, and the stage has an extension length, in a direction along which the pair of guide portions are spaced apart from each other, the extension length of the stage is smaller than that of the transfer portion, and corresponds to In the direction of the guide portion, an extension length of the stage is equal to or smaller than an extension length of the transfer portion. 如申請專利範圍第7項所述的基底處理設備,其中所述處理腔室具有小於所述轉移部分的表面積且等於或大於所述載台的表面積的表面積。The substrate processing apparatus according to item 7 of the patent application scope, wherein the processing chamber has a surface area smaller than a surface area of the transfer portion and equal to or larger than a surface area of the stage. 如申請專利範圍第3項至第8項中任一項所述的基底處理設備,更包括管路部分,所述管路部分具有設置於所述處理腔室中的一端和延伸以連接到幫浦的另一端,以通過使用所述幫浦的抽吸力調整所述處理腔室的內壓。The substrate processing apparatus according to any one of claims 3 to 8 of the scope of patent application, further comprising a pipeline portion having one end provided in the processing chamber and extending to be connected to a helper. The other end of the pump to adjust the internal pressure of the processing chamber by using the pumping force of the pump. 如申請專利範圍第9項所述的基底處理設備,其中所述管路部分包括: 第一延伸部分,所述第一延伸部分從所述處理腔室的內部向下延伸;以及 第一管路部件,所述第一管路部件在對應於所述導引件部分的方向上延伸,且具有連接到所述第一延伸部分的一端和連接到所述幫浦的另一端,並通過從外面傳輸的力延伸和收縮,以變化所述第一管路部件的長度或形狀。The substrate processing apparatus according to item 9 of the scope of patent application, wherein the pipeline portion includes: a first extension portion that extends downward from the inside of the processing chamber; and a first pipeline Component, the first pipeline component extends in a direction corresponding to the guide portion, and has one end connected to the first extension portion and the other end connected to the pump, and passes from the outside The transmitted force extends and contracts to change the length or shape of the first pipe part. 如申請專利範圍第10項所述的基底處理設備,其中所述管路部分包括第二管路部件,其連接到所述第一管路部件,且 所述第一管路部件和所述第二管路部件中的每一個被提供多個,使得所述第一管路部件與所述第二管路部件交替地設置若干次。The substrate processing apparatus according to claim 10, wherein the pipeline portion includes a second pipeline component connected to the first pipeline component, and the first pipeline component and the first pipeline component Each of the two pipeline members is provided in plural, so that the first pipeline member and the second pipeline member are alternately provided several times. 如申請專利範圍第11項所述的基底處理設備,其中所述第二管路部件包括波紋管。The substrate processing apparatus according to item 11 of the patent application scope, wherein the second pipeline component includes a bellows. 一種基底處理方法,包括: 讓基底坐落於設置在處理腔室中的底座上; 朝所述基底輻射光;以及 水平地移動設置於所述處理腔室外側以支撑所述處理腔室和所述底座的載台,以將所述處理腔室和所述底座與所述載台一起水平移動。A substrate processing method includes: arranging a substrate on a base provided in a processing chamber; radiating light toward the substrate; and horizontally moving and disposed outside the processing chamber to support the processing chamber and the substrate A carrier on a base to horizontally move the processing chamber and the base together with the carrier. 如申請專利範圍第13項所述的基底處理方法,其中通過操作安裝於所述載台下方的轉移部分的方式,使得所述載台沿著設置於所述處理腔室外側且在一個方向上延伸的導引件部分水平移動,以執行所述載台的所述水平地移動。The substrate processing method according to item 13 of the scope of patent application, wherein the carrier is arranged along the outside of the processing chamber and in one direction by operating a transfer portion installed below the carrier. The extended guide portion is moved horizontally to perform the horizontal movement of the stage. 如申請專利範圍第14項所述的基底處理方法,其中通過從基底和導引件部分浮動所述載台的方式,使得被配置來朝向裝設於所述轉移部分下方的所述基底和所述導引件部分中的每一個噴灑空氣的空氣軸承水平移動,以執行所述載台的所述水平地移動。The substrate processing method according to item 14 of the scope of patent application, wherein the substrate is floated from the substrate and the guide portion so as to be arranged to face the substrate and the substrate installed below the transfer portion. Each of the air-sprayed air bearings in the guide portion moves horizontally to perform the horizontal movement of the stage. 如申請專利範圍第14項所述的基底處理方法,更包括在將光輻射到所述基底且水平移動所述處理腔室和所述底座的同時,調整所述處理腔室的內壓, 其中通過操作幫浦來抽吸延伸設置於所述處理腔室內部的管路部分的一端的方式,調整所述處理腔室的壓力,以執行所述處理腔室的所述內壓的所述調整,且 當所述處理腔室和所述底座水平移動時,所述管路部分在所述處理腔室和所述底座的水平移動方向上延伸或收縮。The substrate processing method according to item 14 of the scope of patent application, further comprising adjusting the internal pressure of the processing chamber while radiating light to the substrate and horizontally moving the processing chamber and the base, wherein The pressure of the processing chamber is adjusted by suctioning one end of a pipe portion provided inside the processing chamber by operating a pump to perform the adjustment of the internal pressure of the processing chamber. And when the processing chamber and the base move horizontally, the pipeline portion extends or contracts in the horizontal movement direction of the processing chamber and the base.
TW106124217A 2016-07-26 2017-07-20 Substrate processing apparatus and the method of substrate processing TWI737774B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2016-0094909 2016-07-26
??10-2016-0094909 2016-07-26
KR1020160094909A KR101958715B1 (en) 2016-07-26 2016-07-26 Apparatus for processing substrate

Publications (2)

Publication Number Publication Date
TW201816893A true TW201816893A (en) 2018-05-01
TWI737774B TWI737774B (en) 2021-09-01

Family

ID=61127862

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106124217A TWI737774B (en) 2016-07-26 2017-07-20 Substrate processing apparatus and the method of substrate processing

Country Status (3)

Country Link
KR (1) KR101958715B1 (en)
CN (1) CN107658239B (en)
TW (1) TWI737774B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102267447B1 (en) * 2019-05-28 2021-06-21 디아이티 주식회사 Stage chamber for treating the surface of semiconductor device, and apparatus having the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070029032A (en) * 2005-09-08 2007-03-13 주성엔지니어링(주) Movable transfer chamber and substrate processing apparatus comprising the same
US7810723B2 (en) 2005-11-17 2010-10-12 Hypercom Corporation System and method to purchase applications by a point of sale terminal
KR101563380B1 (en) * 2007-12-28 2015-11-06 램 리써치 코포레이션 Wafer carrier drive apparatus and method for operating the same
KR101089626B1 (en) * 2009-07-24 2011-12-06 에이피시스템 주식회사 Laser annealing apparatus having air bearing for transferring substrate
KR101243743B1 (en) * 2010-02-18 2013-03-13 주식회사 아바코 Substrate transferring apparatus, substrate processing apparatus with it and substrate processing method using it
KR101701947B1 (en) * 2010-12-01 2017-02-02 주성엔지니어링(주) Substrate bonding apparatus and method of bonding the substrate
KR20140042337A (en) * 2012-09-28 2014-04-07 한미반도체 주식회사 Suction table device

Also Published As

Publication number Publication date
KR101958715B1 (en) 2019-03-18
KR20180012091A (en) 2018-02-05
CN107658239B (en) 2023-06-20
TWI737774B (en) 2021-09-01
CN107658239A (en) 2018-02-02

Similar Documents

Publication Publication Date Title
US10854491B2 (en) Dynamic leveling process heater lift
JP5141707B2 (en) SUPPORT MECHANISM AND SUPPORT METHOD FOR PROCESSED BODY AND CONVEYING SYSTEM HAVING THE SAME
TWI680196B (en) Apparatus and system for processing a substrate in a vacuum chamber, and method of aligning a substrate carrier relative to a mask carrier
TW201942405A (en) Apparatus for carrier alignment in a vacuum chamber, vacuum system and method of aligning a carrier in a vacuum chamber
KR20120051592A (en) Vacuum processing apparatus and assembly method thereof
TWI737774B (en) Substrate processing apparatus and the method of substrate processing
KR101190106B1 (en) Alignment device for vacuum deposition
TWI678421B (en) Apparatus and system for processing a substrate in a vacuum chamber, and method of transporting a carrier in a vacuum chamber
JP4596794B2 (en) Alignment equipment for vacuum deposition
US20180073143A1 (en) Plasma processing apparatus and plasma processing method
JP4314648B2 (en) Stage device and optical device equipped with the same
JP2015230927A (en) Mobile device and charged particle beam drawing device
CN110557953B (en) Device and vacuum system for alignment of a carrier in a vacuum chamber and method for aligning a carrier
KR102089350B1 (en) Apparatus for transferring substrate and Apparatus for processing substrate having the same
CN110557952A (en) Apparatus for processing a carrier in a vacuum chamber, vacuum deposition system and method of processing a carrier in a vacuum chamber
WO2022264287A1 (en) Stage device, charged particle beam device, and vacuum device
JP2023077326A (en) Vacuum processing apparatus
JP3318735B2 (en) Processing equipment with a processing container having a linear motion mechanism
JP3256895B2 (en) Processing equipment with a processing container having a linear motion mechanism
JP3684456B2 (en) Processing apparatus including a processing container having a linear motion mechanism
JP2023525244A (en) Apparatus and method for transferring devices in a vacuum processing system
JP2003217997A (en) Stage apparatus and aligner
JPH10286452A (en) Treating device equipped with treating container having direct action mechanism and rotational drive mechanism
JPH11545A (en) Treating device equipped with treating vessel having straight moving mechanism
KR20090068770A (en) Lid opening/closing apparatus