TW201813817A - Sheet for forming protective film in cutting substrate, method for preparing the same, circuit board including the same, and preparation method thereof capable of effectively forming a protective film on any surface of a cut semiconductor substrate, thereby promoting production efficiency - Google Patents

Sheet for forming protective film in cutting substrate, method for preparing the same, circuit board including the same, and preparation method thereof capable of effectively forming a protective film on any surface of a cut semiconductor substrate, thereby promoting production efficiency Download PDF

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TW201813817A
TW201813817A TW105132760A TW105132760A TW201813817A TW 201813817 A TW201813817 A TW 201813817A TW 105132760 A TW105132760 A TW 105132760A TW 105132760 A TW105132760 A TW 105132760A TW 201813817 A TW201813817 A TW 201813817A
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protective film
substrate
sheet
circuit
forming
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TW105132760A
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TWI642544B (en
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鄭憲徽
伍得
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武漢市三選科技有限公司
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Abstract

The present invention relates to a sheet for forming a protective film in cutting a substrate, comprising a first release sheet and a protective film forming layer formed on the peelable surface of the first release sheet, wherein the protection film forming layer includes silicon dioxide and epoxy resin modified with an amine-based silane coupling agent or an epoxy-oxonane coupling agent; and a method for preparing the same; and a circuit cutting substrate having the abovementioned protection film on any sides thereof. The silane coupling agent has the following structure: Si(R1)n(R2)4-n, in which R1 represents a cationic polymerizable functional group linked to a deuterium atom, for example, a functional group of cyclic ether group or vinyloxy group, R2 represents hydrogen attached to a silicon atom, a hydrocarbyl, an alkyl, or an alkoxy, and n is an integer from 1 to 4.

Description

形成切割基板保護膜之薄片及其製備方法、含其之電路基板及製備方法    Sheet for forming cutting substrate protective film and preparation method thereof, circuit substrate containing same and preparation method   

本發明係有關一種形成切割基板保護膜之薄片,其可於半導體用之電路切割基板任意面有效形成保護膜,因而促成切割基板生產效率的提昇。 The present invention relates to a sheet for forming a protective film for a dicing substrate, which can effectively form a protective film on any side of a circuit dicing substrate for a semiconductor, thereby promoting the production efficiency of the dicing substrate.

積體電路已廣泛運用於半導體技術中;製備電路基板中如半導體晶圓之形成的積體電路晶圓,其藉表列式的分割線(所謂的界道(streets))分隔。以界道分隔的各區域界定出半導體晶片。亦即,沿著界道切割晶圓,得到多個半導體晶片。 Integrated circuits have been widely used in semiconductor technology; integrated circuit wafers, such as semiconductor wafers formed in the preparation of circuit substrates, are separated by tabular dividing lines (so-called streets). The semiconductor wafers are defined by regions separated by boundary roads. That is, the wafer is cut along the boundary to obtain a plurality of semiconductor wafers.

電路切割基板沿著界道之切割通常係藉切割裝置(所謂的切割器)進行。此切割裝置包含用以固定電路基板(其為工作物件)的夾頭台(chuck table)、用以切割夾在夾頭台上的電路切割基板之切割構件及用以移動夾頭台和切割構件之相對位置之移動構件。此切割構件包括要於高速旋轉的轉軸及設於軸上的切割刀。此切割刀包含盤狀底部和設於該底部側表面之外圍部分上的環狀切割邊緣。此切割邊緣,例如,包含鑽石磨蝕粒,其晶粒尺寸約3微米,藉電成形(electroforming)而固定於底部側表面的外圍部分,形成之厚度約20微米。 The cutting of the circuit cutting substrate along the boundary is usually performed by a cutting device (so-called cutter). The cutting device includes a chuck table for fixing a circuit substrate (which is a work object), a cutting member for cutting a circuit cutting substrate clamped on the chuck table, and a chuck table and a cutting member for moving the chuck table. Relative position of the moving member. The cutting member includes a rotating shaft to be rotated at a high speed, and a cutting blade provided on the shaft. This cutting blade includes a disc-shaped bottom and an annular cutting edge provided on a peripheral portion of a side surface of the bottom. This cutting edge, for example, contains diamond abrasive grains, the grain size of which is about 3 micrometers, and is fixed to the peripheral portion of the bottom side surface by electroforming to form a thickness of about 20 micrometers.

前述之電路切割基板通常是脆度高的材料,且易因機械研磨造成背面形成微小刮擦。因此,在以切割刀(切割邊緣)將電路切割基板(如, 半導體晶圓)切成電路基板(如,半導體晶片)時,依據保護需求,常使用樹脂密封切割基板(如,晶片)於樹脂或使用樹脂塗覆切割基板背面,藉此獲得半導體元件。樹脂密封法之缺點為難以滴下適量樹脂,造成樹脂量過多,因此目前已有保護電路切割基板之保護膜之薄片,如臺灣發明專利公告第533532號,其方便形成高度均一保護膜於電路切割基板背面,免除刮擦造成的不良影響。 The aforementioned circuit cutting substrate is usually a material with high brittleness, and it is easy to cause micro scratches on the back surface due to mechanical grinding. Therefore, when a circuit cutting substrate (such as a semiconductor wafer) is cut into a circuit substrate (such as a semiconductor wafer) with a dicing blade (cutting edge), a resin is often used to seal the cutting substrate (such as a wafer) to the resin in accordance with protection requirements. Alternatively, the back surface of the dicing substrate is coated with a resin to obtain a semiconductor element. The disadvantage of the resin sealing method is that it is difficult to drip an appropriate amount of resin, resulting in too much resin. Therefore, there is currently a sheet of protective film for protecting a circuit cutting substrate, such as Taiwan Invention Patent Publication No. 533532, which is convenient for forming a highly uniform protective film on a circuit cutting substrate. On the backside, it avoids the bad effects caused by scratching.

然而,本發明人發現,上開臺灣發明專利公告第533532號所揭示之晶片保護膜之薄片,其包括一離型片及一保護膜形成層形成於該離型片之可脫離面上,其中該保護膜形成層包括一種熱固或能量射線可硬化組成分以及一種黏結劑聚合物組成分。然而,由於該保護膜形成層必須加入黏結劑聚合物,且透過熱固或能量射線硬化,因此當其貼附於晶圓背後,需要經過高溫加熱(如160℃)或能量射線(如紫外光)照射,方得以形成保護膜,因此,在使用上並不方便。 However, the present inventor has discovered that the wafer protective film sheet disclosed in Shangkai Taiwan Invention Patent Publication No. 533532 includes a release sheet and a protective film forming layer formed on the release surface of the release sheet, wherein The protective film forming layer includes a thermosetting or energy ray hardenable component and a binder polymer component. However, since the protective film-forming layer must be added with a binder polymer and hardened by thermosetting or energy rays, when it is attached to the back of the wafer, it needs to be heated at high temperature (such as 160 ° C) or energy rays (such as ultraviolet light). ) Irradiation to form a protective film, so it is not convenient to use.

因此,本發明人經多方測試後,驚訝的發現,若使用經胺基矽氧烷耦合劑或環氧矽氧烷耦合劑改質之二氧化矽及環氧樹脂形成保護膜,可免除如上開專利之保護膜形成層需要高溫加熱(如160℃)或能量射線(如紫外光)照射方得以形成保護膜之不便,而僅需經過烘烤即可形成保護膜,且不需添加黏結劑,即可黏著於切割基板背面。 Therefore, the inventors have surprisingly found that after using various tests, if the silicon dioxide and epoxy resin modified by the amine-based siloxane coupling agent or epoxy siloxane coupling agent are used to form the protective film, the above-mentioned protection can be avoided. The patented protective film forming layer requires high temperature heating (such as 160 ° C) or irradiation with energy rays (such as ultraviolet light) to form the inconvenience of the protective film, and only needs to be baked to form a protective film without adding an adhesive. Can be adhered to the back of the cutting substrate.

因此,本發明一方面係提供一種形成切割基板保護膜之薄片,包括一第一離形片及一保護膜層,該保護膜層係形成於該第一離形片之可剝離面上,其中該保護膜層包括經胺基矽氧烷耦合劑或環氧矽氧烷耦 合劑改質之二氧化矽及環氧樹脂。 Therefore, an aspect of the present invention is to provide a sheet for forming a cutting substrate protective film, including a first release sheet and a protective film layer, the protective film layer being formed on a peelable surface of the first release sheet, wherein The protective film layer includes silicon dioxide and epoxy resin modified by an amine-based siloxane coupling agent or an epoxy siloxane coupling agent.

本發明之另一方面係提供一種製備本發明之形成切割基板保護膜之薄片之方法,其包含下列步驟:(a)提供一第一離形片;(b)混合經胺基矽氧烷耦合劑或環氧矽氧烷耦合劑改質之二氧化矽及環氧樹脂,獲得一環氧樹脂/二氧化矽漿液;(c)將該環氧樹脂/二氧化矽漿液塗覆於該第一離形片之可剝離面上,形成一濕膜,並烘乾形成一保護膜層。 Another aspect of the present invention is to provide a method for preparing a sheet for forming a dicing substrate protective film according to the present invention, which comprises the following steps: (a) providing a first release sheet; (b) mixing and coupling via an aminosiloxane Agent or epoxy siloxane coupling agent modified silicon dioxide and epoxy resin to obtain an epoxy resin / silica dioxide slurry; (c) coating the epoxy resin / silica dioxide slurry on the first A wet film is formed on the peelable surface of the release sheet and dried to form a protective film layer.

本發明之再一方面係提供一種生產電路切割基板之方法,該電路切割基板具有保護膜於背面,該方法包含將本發明之形成切割基板保護膜之薄片之保護膜層黏著於表面具有電路之電路切割基板任意面,剝離該第一離形片,就各電路連同保護膜層切割該電路切割基板。 Another aspect of the present invention is to provide a method for producing a circuit-cut substrate. The circuit-cut substrate has a protective film on a back surface. The method includes adhering a protective film layer of the sheet forming the protective film of the dicing substrate of the present invention to a surface having a circuit. The circuit cuts the substrate on any side, peels off the first release sheet, and cuts the circuit cut substrate for each circuit together with the protective film layer.

本發明之又一方面係提供一種具有保護膜於背面之電路切割基板,其係由上述之方法製備而成,其中該保護膜係由經胺基矽氧烷耦合劑或環氧矽氧烷耦合劑改質之二氧化矽及環氧樹脂之保護膜層所組成。 Another aspect of the present invention is to provide a circuit-cut substrate with a protective film on the back surface, which is prepared by the method described above, wherein the protective film is coupled by an amine-based siloxane coupling agent or epoxy siloxane. It is composed of protective film layer of modified silica and epoxy resin.

10a、10b‧‧‧形成切割基板保護膜之薄片 10a, 10b ‧‧‧ forming a sheet for cutting substrate protection film

1a、1b‧‧‧第一離型片 1a, 1b ‧‧‧ the first release film

2a、2b‧‧‧保護膜層 2a, 2b‧‧‧protective film layer

3b‧‧‧第二離型片 3b‧‧‧Second Release Film

4a、4b‧‧‧電路切割基板 4a, 4b‧‧‧‧Circuit cutting substrate

圖1(a)係本發明之形成切割基板保護膜之薄片之第一實施態樣示意圖;圖1(b)係本發明之形成切割基板保護膜之薄片之第二實施態樣示意圖。 FIG. 1 (a) is a schematic view of a first embodiment of a sheet for forming a dicing substrate protective film of the present invention; FIG. 1 (b) is a schematic view of a second embodiment of a sheet for forming a dicing substrate protective film of the present invention.

圖2(a)係本發明之形成切割基板保護膜之薄片之第一實施態樣之製備流程圖;圖2(b)係本發明之形成切割基板保護膜之薄片之第二實施態樣之製備流程圖。 Fig. 2 (a) is a flow chart for preparing the first embodiment of the sheet for forming a dicing substrate protective film of the present invention; Fig. 2 (b) is a second embodiment of the sheet for forming the dicing substrate protective film of the present invention; Preparation flow chart.

圖3(a)係本發明之形成切割基板保護膜之薄片之第三實施態樣示意圖;圖1(b)係本發明之形成切割基板保護膜之薄片之第四實施態樣 示意圖。 FIG. 3 (a) is a schematic diagram of a third embodiment of a sheet for forming a dicing substrate protective film of the present invention; FIG. 1 (b) is a schematic diagram of a fourth embodiment of a sheet for forming a dicing substrate protective film of the present invention.

以下茲參照附圖說明本發明之細節。 The details of the present invention are described below with reference to the drawings.

圖1(a)為本發明之形成切割基板保護膜之薄片10a之第一實施態樣。該形成切割基板保護膜之薄片10a包括一第一離形片1a及一保護膜層2a,該保護膜層2a係形成於該第一離形片1a之可剝離面上,其中該保護膜層2a包括經胺基矽氧烷耦合劑或環氧矽氧烷耦合劑改質之二氧化矽及環氧樹脂。 FIG. 1 (a) is a first embodiment of a sheet 10a for forming a dicing substrate protective film according to the present invention. The sheet 10a for forming a cutting substrate protective film includes a first release sheet 1a and a protective film layer 2a. The protective film layer 2a is formed on a peelable surface of the first release sheet 1a, wherein the protective film layer 2a includes silicon dioxide and epoxy resin modified by amine-based siloxane coupling agent or epoxy siloxane coupling agent.

圖1(b)為本發明之形成切割基板保護膜之薄片10b之第二實施態樣。該形成切割基板保護膜之薄片10b包括一第一離形片1b及一保護膜層2a,該保護膜層2a係形成於該第一離形片1b之可剝離面上,其中該保護膜層2a包括經胺基矽氧烷耦合劑或環氧矽氧烷耦合劑改質之二氧化矽及環氧樹脂;及該保護膜層上進一步包含一第二離形片3b。 FIG. 1 (b) is a second embodiment of the sheet 10b for forming a cutting substrate protective film according to the present invention. The sheet 10b for forming a cutting substrate protective film includes a first release sheet 1b and a protective film layer 2a. The protective film layer 2a is formed on a peelable surface of the first release sheet 1b, wherein the protective film layer 2a includes silicon dioxide and epoxy resin modified by an amine-based siloxane coupling agent or an epoxy siloxane coupling agent; and the protective film layer further includes a second release sheet 3b.

第一離型片1a、1b及第二離形片3b可由下列材料製成之薄膜組成,例如聚乙烯、聚丙烯、聚丁烯、聚丁二烯、聚甲基戊烯、聚乙烯基氯、乙烯基氯共聚物、聚對苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、聚對苯二甲酸丁二酸酯、聚胺基甲酸酯、乙烯-乙酸乙烯酯、離子交聯聚合物樹脂、乙烯/(甲烯)丙烯酸共聚物、乙烯/(甲烯)丙烯酸酯共聚物、聚苯乙烯、聚碳酸酯、醋酸纖維素、三醋酸纖維素、聚醯亞胺及含氟樹脂。前述聚合物之交聯產物薄膜或前述薄膜之積層膜也可使用。於保護膜形成層硬化後脫離離型片時,以聚甲基戊烯、聚萘二甲酸乙二醇酯、三醋酸纖維素及聚醯亞胺薄膜為特佳,原因在於其具有絕佳耐熱性。 The first release sheet 1a, 1b and the second release sheet 3b may be composed of a film made of the following materials, such as polyethylene, polypropylene, polybutene, polybutadiene, polymethylpentene, polyvinyl chloride , Vinyl chloride copolymer, polyethylene terephthalate, polyethylene naphthalate, polysuccinate, polyurethane, ethylene-vinyl acetate, ion Crosslinked polymer resin, ethylene / (methene) acrylic copolymer, ethylene / (methene) acrylate copolymer, polystyrene, polycarbonate, cellulose acetate, cellulose triacetate, polyimide and containing Fluororesin. A crosslinked product film of the polymer or a laminated film of the film can also be used. When the protective film-forming layer is cured and released from the release sheet, polymethylpentene, polyethylene naphthalate, cellulose triacetate, and polyimide film are particularly preferable because of its excellent heat resistance Sex.

第一離型片1a、1b及第二離形片3b具有表面張力40毫牛頓/米或以下,較好為37毫牛頓/米或以下,更佳為35毫牛頓/米或以下。離型片1之低表面張力可經由適當選擇片材或經由塗覆矽樹脂於薄片1表面進行離型處理而達成。離型片1之厚度通常為5至300微米,較好為10至200微米,更佳為20至150微米。 The first release sheets 1a, 1b and the second release sheet 3b have a surface tension of 40 mN / m or less, preferably 37 mN / m or less, and more preferably 35 mN / m or less. The low surface tension of the release sheet 1 can be achieved by appropriately selecting a sheet material or by performing a release treatment on the surface of the sheet 1 by applying a silicone resin. The thickness of the release sheet 1 is usually 5 to 300 microns, preferably 10 to 200 microns, and more preferably 20 to 150 microns.

形成於該第一離形片1a、1b之可剝離面上的保護膜層2a、2b包括經胺基矽氧烷耦合劑或環氧矽氧烷耦合劑改質之二氧化矽及環氧樹脂。本文中所稱之改質之二氧化矽,係代表二氧化矽表面之Si-OH化學基及耦合劑上具與Si-O之相容性及化學性之官能基團形成二氧化矽表面有機化;利用二氧化矽表層之-OH基與耦合劑官能基團進行接枝反應而形成化學鍵結。 The protective film layers 2a, 2b formed on the peelable surface of the first release sheet 1a, 1b include silicon dioxide and epoxy resin modified by an amine-based siloxane coupling agent or an epoxy siloxane coupling agent. . The modified silicon dioxide referred to in this article refers to the Si-OH chemical group on the surface of silicon dioxide and functional groups on the coupling agent that have compatibility and chemical properties with Si-O to form the surface of silicon dioxide. The chemical bonding is formed by the graft reaction of the -OH group on the surface of the silicon dioxide with the functional group of the coupling agent.

本發明中所使用之環氧矽氧烷耦合劑具有如下式之結構:Si(R1)n(R2)4-n,其中R1代表一連接於一矽原子之陽離子可聚合官能基團,例如一含環醚基團(cyclic ether group)或乙烯氧基團(vinyloxy group)之官能基,R2代表連接於一矽原子之氫、一羥基、一烷基、或一烷氧基,為1至4之整數;舉例但不限於下列該矽氧烷耦合劑如:2-(3,4-環氧環己基)乙基三甲氧基矽烷(2-(3,4-epoxycyclohexyl)ethyl trimethoxy silane)、3-環氧丙基氧基丙基三甲氧基矽烷(3-glycidoxypropyl trimethoxy silane)、環氧丙基氧基丙基甲基二乙氧基矽烷(glycidoxypropyl methyldiethoxy silane)、環氧丙基氧基丙基三乙氧基矽烷(glycidoxypropyl triethoxy silane)、乙烯基三甲氧基矽烷(vinyltrimethoxy silane)或乙烯基三乙氧基矽烷(vinyltriethoxy silane)。 The epoxy siloxane coupling agent used in the present invention has a structure of the following formula: Si (R 1 ) n (R 2 ) 4-n , where R 1 represents a cationic polymerizable functional group connected to a silicon atom For example, a functional group containing a cyclic ether group or a vinyloxy group, and R 2 represents hydrogen, a hydroxyl group, an alkyl group, or an alkoxy group attached to a silicon atom, Is an integer from 1 to 4; examples but not limited to the following siloxane coupling agents such as: 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane (2- (3,4-epoxycyclohexyl) ethyl trimethoxy silane), 3-glycidoxypropyl trimethoxy silane, glycidoxypropyl methyldiethoxy silane, epoxypropyl Glycidoxypropyl triethoxy silane, vinyltrimethoxy silane or vinyltriethoxy silane.

本發明中所使用之胺基矽烷耦合劑,可舉例如:N-2(胺基乙 基)3-胺基丙基甲基二甲氧基矽烷、N-2(胺基乙基)-3-胺基丙基三甲氧基矽烷、N-2(胺基乙基)-3-胺基丙基三乙氧基矽烷、3-胺基丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、3-三乙氧矽基-N-(1,3-二甲基-亞丁基)丙胺、N-苯基-3-胺基丙基三甲氧基矽烷、N-(乙烯苯甲基)-2-胺基乙基-3-胺基丙基三甲氧基矽烷塩酸塩、3-脲基丙基三乙氧基矽烷、3-氯丙基三甲氧基矽烷、3-巰基丙基甲基二甲氧基矽烷、3-巰基丙基三甲氧基矽烷、四硫化雙(三乙氧矽基丙基)、3-異氰酸丙酯三乙氧基矽烷、咪唑矽烷等。 Examples of the aminosilane coupling agent used in the present invention include: N-2 (aminoethyl) 3-aminopropylmethyldimethoxysilane, N-2 (aminoethyl) -3 -Aminopropyltrimethoxysilane, N-2 (aminoethyl) -3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane Ethoxysilane, 3-triethoxysilyl-N- (1,3-dimethyl-butylene) propylamine, N-phenyl-3-aminopropyltrimethoxysilane, N- (vinylbenzene (Methyl) -2-aminoethyl-3-aminopropyltrimethoxysilamidine, 3-ureidopropyltriethoxysilane, 3-chloropropyltrimethoxysilane, 3-mercaptopropane Methylmethyldimethoxysilane, 3-mercaptopropyltrimethoxysilane, bis (triethoxysilylpropyl) tetrasulfide, 3-isocyanatopropyltriethoxysilane, imidazolesilane, and the like.

上述之該等胺基矽氧烷耦合劑或環氧矽氧烷耦合劑可單獨使用,亦可混合2種以上使用。 These amine-based siloxane coupling agents or epoxy siloxane coupling agents may be used alone or in combination of two or more.

本發明中之環氧樹脂並未特別設限,可用於封裝的環氧樹脂均可,例如雙酚A型環氧樹脂、溴化環氧樹脂、酚醛清漆型環氧樹脂、雙酚F型環氧樹脂、氫化雙酚A型環氧樹脂、縮水甘油基胺型環氧樹脂、乙內醯脲型環氧樹脂、脂環式環氧樹脂、三羥基苯基甲烷型環氧樹脂、雙-二甲酚型或雙酚型環氧樹脂或該些之混合物、雙酚S型環氧樹脂、雙酚A酚醛清漆型環氧樹脂、四苯基酚醇(PHENYLOL)乙烷型環氧樹脂、雜環式環氧樹脂、二縮水甘油基苯甲酸脂樹脂、四縮水甘油基二甲酚基乙烷樹脂、含有萘基之環氧樹脂、含氮之環氧樹脂、具有二環戊二烯骨架之環氧樹脂、縮水甘油基甲基丙烯酸酯共聚合系環氧樹脂、環己基馬來醯亞胺與縮水甘油基甲基丙烯酸酯之共聚合環氧樹脂;CTBN改質環氧樹脂等,但並不僅限定於該些內容。該些環氧樹脂可單獨或將2種以上組合使用。 The epoxy resin in the present invention is not particularly limited, and can be used for encapsulation, such as bisphenol A epoxy resin, brominated epoxy resin, novolac epoxy resin, and bisphenol F-ring. Oxygen resin, hydrogenated bisphenol A type epoxy resin, glycidylamine type epoxy resin, hydantoin type epoxy resin, alicyclic epoxy resin, trihydroxyphenylmethane type epoxy resin, bis-di Cresol-type or bisphenol-type epoxy resin or a mixture thereof, bisphenol S-type epoxy resin, bisphenol A novolac-type epoxy resin, tetraphenylphenol ethane-type epoxy resin, miscellaneous Cyclic epoxy resin, diglycidyl benzoate resin, tetraglycidyl xylenol ethane resin, naphthyl-containing epoxy resin, nitrogen-containing epoxy resin, dicyclopentadiene skeleton Epoxy resin, glycidyl methacrylate copolymer epoxy resin, cyclohexyl maleimide and glycidyl methacrylate copolymer epoxy resin; CTBN modified epoxy resin, etc. It is not limited to these contents. These epoxy resins can be used individually or in combination of 2 or more types.

上述環氧樹脂環氧樹脂於使用時最好與硬化劑一起使用,可使用的硬化劑可列舉例如,胺系硬化劑、胍胺系硬化劑、咪唑系硬化劑、 酚系硬化劑、萘酚系硬化劑、酸酐系硬化劑、或其環氧加成物等,於本發明中,硬化劑可為一種或併用二種以上亦可;樹脂與硬化劑的配合比率可根據樹脂、硬化劑之種類等而適當選擇,例如,環氧樹脂與硬化劑的配合比率於酚系硬化劑或萘酚系硬化劑的情形,此些硬化劑之酚性羥基當量相對於環氧樹脂的1環氧當量為0.4~2.0之範圍比率為佳,且以0.5~1.0之範圍比率為更佳。 The epoxy resin is preferably used together with a hardener during use. Examples of usable hardeners include amine-based hardeners, guanamine-based hardeners, imidazole-based hardeners, phenol-based hardeners, and naphthol. Type hardener, acid anhydride type hardener, or epoxy adduct thereof, etc. In the present invention, one kind of hardener may be used or two or more kinds may be used in combination; the blending ratio of resin and hardener may be based on the resin and hardener The type and the like are appropriately selected, for example, the mixing ratio of the epoxy resin and the hardener is the case of a phenol-based hardener or a naphthol-based hardener. The phenolic hydroxyl equivalent of these hardeners is 1 epoxy equivalent of the epoxy resin. A range ratio of 0.4 to 2.0 is preferable, and a range ratio of 0.5 to 1.0 is more preferable.

上述之胺基矽氧烷耦合劑或環氧矽氧烷耦合劑改質之二氧化矽及環氧樹脂兩者為10:90~90:10重量份,較佳的為45:55~75:25重量份。 The above-mentioned amine-based siloxane coupling agent or epoxy siloxane coupling agent modified silicon dioxide and epoxy resin are both 10:90 to 90:10 parts by weight, preferably 45:55 to 75: 25 parts by weight.

以下請參照圖2說明製備本發明之形成切割基板保護膜之薄片10a、10b,以及由該形成切割基板保護膜之薄片10a、10b以生產電路切割基板之方法。 Hereinafter, referring to FIG. 2, a method for preparing the dicing substrate protective film-forming sheets 10 a and 10 b of the present invention and the method for producing a circuit dicing substrate from the dicing substrate protective film-forming sheets 10 a and 10 b will be described.

圖2(a)係本發明之形成切割基板保護膜之薄片10a之第一實施態樣之製備流程圖,其係先提供一提供一第一離形片1a;混合經胺基矽氧烷耦合劑或環氧矽氧烷耦合劑改質之二氧化矽及環氧樹脂,獲得一環氧樹脂/二氧化矽漿液;將該環氧樹脂/二氧化矽漿液塗覆於該第一離形片1a之可剝離面上,形成一濕膜,並烘乾形成一保護膜層2a。 FIG. 2 (a) is a preparation flow chart of the first embodiment of the sheet 10a for forming a cutting substrate protective film according to the present invention, which first provides a first release sheet 1a; the mixture is coupled via an amine siloxane Agent or epoxy siloxane coupling agent modified silicon dioxide and epoxy resin to obtain an epoxy resin / silica dioxide slurry; coating the epoxy resin / silica dioxide slurry on the first release sheet A wet film is formed on the peelable surface of 1a, and a protective film layer 2a is formed by drying.

上述之將該環氧樹脂/二氧化矽漿液塗覆於該第一離形片1a之可剝離面上之步驟,可用習知塗覆機例如輥刀塗覆機、凹版塗覆機、壓模塗覆機及反向塗覆機直接塗覆於第一離型片1a之可脫離表面上,之後再以烘烤方式形成保護膜層2a,即可完成形成切割基板保護膜之薄片10a。其中該烘烤條件為70~120℃,5~12分鐘,例如70、75、80、85、90、95、100、110、120℃,5、6、7、8、9、10、11或12分鐘;較佳為90℃,10分鐘。低 於該溫度及時間,可能造成保護膜無法烘乾為乾膜,而高於該溫度及時間則可能使保護膜形成乾膜後,過熱造成乾膜捲曲或破裂。 The above steps of applying the epoxy resin / silica dioxide slurry to the peelable surface of the first release sheet 1a can be performed using a conventional coating machine such as a roll knife coating machine, a gravure coating machine, or a stamper. The coating machine and the reverse coating machine are directly coated on the detachable surface of the first release sheet 1a, and then the protective film layer 2a is formed by baking, and the sheet 10a for forming the protective film for the cutting substrate can be completed. The baking conditions are 70 ~ 120 ° C, 5 ~ 12 minutes, such as 70, 75, 80, 85, 90, 95, 100, 110, 120 ° C, 5, 6, 7, 8, 9, 10, 11 or 12 minutes; preferably 90 ° C for 10 minutes. Below this temperature and time, the protective film may not be dried into a dry film, and above this temperature and time may cause the protective film to form a dry film, and overheating may cause the dry film to curl or crack.

當獲得形成切割基板保護膜之薄片10a,即可進一步用於貼覆在電路切割基板4a之任意面,其步驟包含將形成切割基板保護膜之薄片10a之保護膜層2a黏著於表面具有電路之電路切割基板4a背面,剝離該第一離形片1a,即可獲得具保護膜層2a之電路切割基板4a,隨後可就各電路連同保護膜層切割該電路切割基板4a(圖未示)。 When the sheet 10a for forming the cutting substrate protective film is obtained, it can be further used for laminating on any side of the circuit cutting substrate 4a. The step includes adhering the protective film layer 2a of the sheet 10a for forming the cutting substrate protective film to the surface having the circuit. The circuit-cutting substrate 4a has a back surface, and the first release sheet 1a is peeled off to obtain a circuit-cutting substrate 4a with a protective film layer 2a. Then, the circuit-cutting substrate 4a (not shown) can be cut for each circuit together with the protective film layer.

圖2(b)係本發明之形成切割基板保護膜之薄片10b之第二實施態樣之製備流程圖,其係先提供一提供一第一離形片1b;混合經胺基矽氧烷耦合劑或環氧矽氧烷耦合劑改質之二氧化矽及環氧樹脂,獲得一環氧樹脂/二氧化矽漿液;將該環氧樹脂/二氧化矽漿液塗覆於該第一離形片1b之可剝離面上,形成一濕膜,並烘乾形成一保護膜層2b,並於該保護膜層2b上進一步貼覆一第二離形片3b,該第二離形片3b係同樣以可剝離面貼覆於保護膜層2b,即可獲得本發明之形成切割基板保護膜之薄片10b之第二實施態樣。 FIG. 2 (b) is a preparation flow chart of the second embodiment of the sheet 10b for forming a cutting substrate protective film according to the present invention, which first provides a first release sheet 1b; the mixture is coupled via an amine siloxane Agent or epoxy siloxane coupling agent modified silicon dioxide and epoxy resin to obtain an epoxy resin / silica dioxide slurry; coating the epoxy resin / silica dioxide slurry on the first release sheet A wet film is formed on the peelable surface of 1b, and a protective film layer 2b is formed by drying, and a second release sheet 3b is further pasted on the protective film layer 2b, and the second release sheet 3b is the same The peelable surface is pasted on the protective film layer 2b to obtain the second embodiment of the sheet 10b for forming a dicing substrate protective film of the present invention.

該第二實施態樣之形成切割基板保護膜之薄片10b即可進一步用於貼覆在電路切割基板4b之任意面,其步驟包含將形成切割基板保護膜之薄片10b之第二離形片3b剝離,將保護膜層2b黏著於表面具有電路之電路切割基板4b任意面,剝離該第一離形片1b,即可獲得具保護膜層2b之電路切割基板4b,隨後可就各電路連同保護膜層切割該電路切割基板4b(圖未示)。 In this second embodiment, the sheet 10b for forming a cutting substrate protective film can be further used to be attached to any side of the circuit cutting substrate 4b. The step includes forming a second release sheet 3b of the sheet 10b for forming a cutting substrate protective film. After peeling, the protective film layer 2b is adhered to any surface of the circuit-cutting substrate 4b having a circuit on the surface, and the first release sheet 1b is peeled off to obtain the circuit-cutting substrate 4b with the protective film layer 2b. Then, each circuit can be protected with The film cuts the circuit cutting substrate 4b (not shown).

圖3(a)本發明之第三實施態樣,其與第一實施態樣不同之處 僅在於該保護膜層2a並非全部塗覆於第一離型片1a上,而係具有間隔,即可形成預先剪裁(pre-cut)之狀態;圖3(b)本發明之第四實施態樣,其與第二實施態樣不同之處僅在於該保護膜層2b並非全部塗覆於第一離型片1b上,而係具有間隔,即可形成預先剪裁(pre-cut)之狀態;因此,於使用上,當保護膜層2a、2b貼覆在電路切割基板即可有對應之大小,而不須進一步裁切。 Fig. 3 (a) A third embodiment of the present invention is different from the first embodiment only in that the protective film layer 2a is not entirely coated on the first release sheet 1a, but has a space, that is, It can be in a pre-cut state; Fig. 3 (b) shows a fourth embodiment of the present invention, which differs from the second embodiment only in that the protective film layer 2b is not entirely applied to the first The release sheet 1b has a space to form a pre-cut state. Therefore, in use, when the protective film layers 2a and 2b are attached to the circuit cutting substrate, the corresponding size can be obtained. No further cutting is required.

[實施例] [Example]

於60℃四氫氟喃中,將10g的二氧化矽與0.3g的3-環氧丙基氧基丙基三甲氧基矽烷混合,進行反應4小時,獲得經3-環氧丙基氧基丙基三甲氧基矽烷改質之二氧化矽。 10 g of silicon dioxide was mixed with 0.3 g of 3-glycidoxypropyltrimethoxysilane in tetrahydrofluoran at 60 ° C, and the reaction was performed for 4 hours to obtain 3-glycidyloxy Silyl dioxide modified by propyltrimethoxysilane.

將5g之3-環氧丙基氧基丙基三甲氧基矽烷改質之二氧化矽與45g之CTBN改質環氧樹脂及45g之酚醛硬化劑混合形成漿液,塗覆於聚對苯二甲酸乙二醇酯之第一離型片上,以連續式烘箱烘烤90℃、10分鐘,形成保護膜層,即可獲得本發明之形成切割基板保護膜之薄片。 5g of 3-glycidoxypropyltrimethoxysilane modified silica was mixed with 45g of CTBN modified epoxy resin and 45g of phenolic hardener to form a slurry, which was coated on polyterephthalic acid On the first release sheet of the glycol ester, the protective film layer is formed by baking in a continuous oven at 90 ° C. for 10 minutes to obtain a sheet for forming a cutting substrate protective film according to the present invention.

[試驗例] [Test example]

將上述實施例之形成切割基板保護膜之薄片,貼覆於表面具有電路之電路切割基板任意面,並撕除第一離型片;將該具保護膜之電路切割基板使用切割裝置進形切割,獲得目標切割基板(10毫米X10毫米)。 The sheet forming the protective film for the cutting substrate of the above embodiment is affixed to any surface of the circuit cutting substrate having a circuit on the surface, and the first release sheet is torn off; the circuit cutting substrate with the protective film is cut into shape using a cutting device To obtain the target cutting substrate (10 mm x 10 mm).

Claims (11)

一種形成切割基板保護膜之薄片,包括一第一離形片及一保護膜層,該保護膜層係形成於該第一離形片之可剝離面上,其中該保護膜層包括經胺基矽氧烷耦合劑或環氧矽氧烷耦合劑改質之二氧化矽及環氧樹脂。     A sheet for forming a protective film for a cutting substrate includes a first release sheet and a protective film layer, the protective film layer is formed on a peelable surface of the first release sheet, wherein the protective film layer includes an amino group Silica coupling agent or epoxy silica coupling agent modified silicon dioxide and epoxy resin.     如請求項1之形成切割基板保護膜之薄片,其中該矽氧烷耦合劑具有如下式之結構:Si(R 1) n(R 2) 4-n,其中R 1代表一連接於一矽原子之陽離子可聚合官能基團,例如一含環醚基團(cyclic ether group)或乙烯氧基團(vinyloxy group)之官能基,R 2代表連接於一矽原子之氫、一羥基、一烷基、或一烷氧基,為1至4之整數。 For example, the sheet for forming a cutting substrate protective film as claimed in claim 1, wherein the siloxane coupling agent has a structure of the following formula: Si (R 1 ) n (R 2 ) 4-n , where R 1 represents a silicon atom A cationic polymerizable functional group, such as a functional group containing a cyclic ether group or a vinyloxy group, and R 2 represents hydrogen, a hydroxyl group, and an alkyl group attached to a silicon atom , Or an alkoxy group, is an integer from 1 to 4. 如請求項2之形成切割基板保護膜之薄片,其中該矽氧烷耦合劑係2-(3,4-環氧環己基)乙基三甲氧基矽烷(2-(3,4-epoxycyclohexyl)ethyl trimethoxy silane)、3-環氧丙基氧基丙基三甲氧基矽烷(3-glycidoxypropyl trimethoxy silane)、環氧丙基氧基丙基甲基二乙氧基矽烷(glycidoxypropyl methyldiethoxy silane)、環氧丙基氧基丙基三乙氧基矽烷(glycidoxypropyl triethoxy silane)、乙烯基三甲氧基矽烷(vinyltrimethoxy silane)或乙烯基三乙氧基矽烷(vinyltriethoxy silane)。     The sheet forming a protective film for a cutting substrate as claimed in claim 2, wherein the siloxane coupling agent is 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane (2- (3,4-epoxycyclohexyl) ethyl trimethoxy silane), 3-glycidoxypropyl trimethoxy silane, glycidoxypropyl methyldiethoxy silane, propylene oxide Glycidoxypropyl triethoxy silane, vinyltrimethoxy silane or vinyltriethoxy silane.     如請求項1之形成切割基板保護膜之薄片,其中該胺基矽烷耦合劑係N-2(胺基乙基)3-胺基丙基甲基二甲氧基矽烷、N-2(胺基乙基)-3-胺基丙基三甲氧基矽烷、N-2(胺基乙基)-3-胺基丙基三乙氧基矽烷、3-胺基丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、3-三乙氧矽基-N-(1,3-二甲基-亞丁基)丙胺、N-苯基-3-胺基丙基三甲氧基矽烷、N-(乙烯苯甲基)-2-胺基乙基-3-胺基丙基三甲氧基矽烷塩酸塩、3-脲基丙基三乙氧基矽烷、3-氯丙基三甲氧基 矽烷、3-巰基丙基甲基二甲氧基矽烷、3-巰基丙基三甲氧基矽烷、四硫化雙(三乙氧矽基丙基)、3-異氰酸丙酯三乙氧基矽烷、咪唑矽烷。     A sheet for forming a cutting substrate protective film as in claim 1, wherein the amine-based silane coupling agent is N-2 (aminoethyl) 3-aminopropylmethyldimethoxysilane, N-2 (amino (Ethyl) -3-aminopropyltrimethoxysilane, N-2 (aminoethyl) -3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3- Aminopropyltriethoxysilane, 3-triethoxysilyl-N- (1,3-dimethyl-butylene) propylamine, N-phenyl-3-aminopropyltrimethoxysilane, N- (vinylbenzyl) -2-aminoethyl-3-aminopropyltrimethoxysilamidine, 3-ureidopropyltriethoxysilane, 3-chloropropyltrimethoxysilane , 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltrimethoxysilane, bis (triethoxysilylpropyl) tetrasulfide, 3-isocyanatetriethoxysilane, Imidazole silane.     如請求項1之形成切割基板保護膜之薄片,其中該保護膜層上進一步包含一第二離形片。     The sheet for forming a protective film for a cutting substrate according to claim 1, wherein the protective film layer further includes a second release sheet.     一種製備如請求項1至5項任一項之形成切割基板保護膜之薄片之方法,其包含下列步驟:(a)提供一第一離形片;(b)混合經胺基矽氧烷耦合劑或環氧矽氧烷耦合劑改質之二氧化矽及環氧樹脂,獲得一環氧樹脂/二氧化矽漿液;(c)將該環氧樹脂/二氧化矽漿液塗覆於該第一離形片之可剝離面上,形成一濕膜,並烘烤形成一保護膜層。     A method for preparing a sheet for forming a cutting substrate protective film according to any one of claims 1 to 5, comprising the following steps: (a) providing a first release sheet; (b) mixing and coupling via an amine siloxane Agent or epoxy siloxane coupling agent modified silicon dioxide and epoxy resin to obtain an epoxy resin / silica dioxide slurry; (c) coating the epoxy resin / silica dioxide slurry on the first A wet film is formed on the peelable surface of the release sheet, and a protective film layer is formed by baking.     如請求項6之方法,其中該烘烤條件為70~120℃,5~12分鐘。     The method of claim 6, wherein the baking conditions are 70 to 120 ° C for 5 to 12 minutes.     如請求項7之方法,其進一步包含將一第二離形片之可剝離面附於該保護膜層上。     The method of claim 7, further comprising attaching a peelable surface of a second release sheet to the protective film layer.     一種生產電路切割基板之方法,該電路切割基板具有保護膜於任意面,該方法包含將請求項1至4任一項之形成切割基板保護膜之薄片之保護膜層黏著於表面具有電路之電路切割基板任意面,剝離該第一離形片,就各電路連同保護膜層切割該電路切割基板。     A method for producing a circuit-cut substrate, the circuit-cut substrate has a protective film on an arbitrary surface, and the method includes adhering a protective film layer of a sheet forming a protective film for a cutting substrate according to any one of claims 1 to 4 to a circuit having a circuit on a surface Cut any surface of the substrate, peel off the first release sheet, and cut the circuit cutting substrate for each circuit together with the protective film layer.     一種生產電路切割基板之方法,該電路切割基板具有保護膜於任意面,該方法包含將請求項5之形成切割基板保護膜之薄片去除第二離形片後之保護膜層,黏著於表面具有電路之電路切割基板背面,剝離該第一離形片,就各電路連同保護膜層切割該電路切割基板。     A method for producing a circuit-cut substrate, the circuit-cut substrate has a protective film on an arbitrary surface, and the method includes removing the second protective film layer of the sheet forming the protective film for the cutting substrate of claim 5 and adhering the surface with The circuit of the circuit cuts the back of the substrate, peels off the first release sheet, and cuts the circuit cut substrate for each circuit together with the protective film layer.     一種具有保護膜於任意面之電路切割基板,其係由請求項9或10之方法製備而成,其中該保護膜係由經胺基矽氧烷耦合劑或環氧矽氧烷耦合劑改質之二氧化矽及環氧樹脂之保護膜層所組成。     A circuit-cut substrate with a protective film on any side, which is prepared by the method of claim 9 or 10, wherein the protective film is modified by an amine-based siloxane coupling agent or an epoxy-based siloxane coupling agent. It is composed of a protective film layer of silicon dioxide and epoxy resin.    
TW105132760A 2016-10-11 2016-10-11 Sheet for forming cut-off substrate protective film, preparation method thereof, circuit board therewith and preparation method thereof TWI642544B (en)

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