TW201812088A - 遠端電漿增強化學氣相沈積系統之電漿產生裝置 - Google Patents

遠端電漿增強化學氣相沈積系統之電漿產生裝置 Download PDF

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TW201812088A
TW201812088A TW105129774A TW105129774A TW201812088A TW 201812088 A TW201812088 A TW 201812088A TW 105129774 A TW105129774 A TW 105129774A TW 105129774 A TW105129774 A TW 105129774A TW 201812088 A TW201812088 A TW 201812088A
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張宇順
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Abstract

一種遠端電漿增強化學氣相沈積(PECVD)系統之電漿產生裝置，其係針對一遠端PECVD系統提供一電漿產生裝置，該電漿產生裝置係隔離地設置有一直流(DC)放電單元、一射頻(RF)放電單元及一微波放電單元，使該直流(DC)放電單元、該射頻(RF)放電單元及該微波放電單元得在使用該遠端電漿增強化學氣相沈積(PECVD)系統時能同步產生放電作用，藉以對進入該遠端電漿產生裝置之源材料或製程氣體進行作用以產生符合要求的電漿源，藉以提昇該遠端PECVD系統之使用效率及其製程效率。

Description

遠端電漿增強化學氣相沈積系統之電漿產生裝置
本發明係有關一種遠端電漿增強化學氣相沈積系統之電漿產生裝置，尤指一種在遠端電漿產生裝置上同時且隔離地設置一直流(DC)放電單元、一射頻(RF)放電單元及一微波放電單元，以使該直流放電單元、該射頻放電單元及該微波放電單元能同步產生放電作用，藉以對進入該遠端電漿產生裝置之製程氣體進行作用以產生符合要求的電漿源。
化學氣相沈積(CVD，Chemical Vapor Deposition)技術是將源材料(或稱薄膜先前物、反應源)以氣體形式(或稱製程氣體)引入反應室中，經由氧化、還原或與基片表面反應之方式進行化學反應，其生成物藉內擴散作用而沈積在基片表面上以形成薄膜。
電漿已廣泛應用於各種領域，如在半導體積體電路製造方面，舉凡不同材料薄膜的成長或電路的蝕刻普遍都是利用電漿技術來達成。電漿中的反應物是化學活性較高的離子或自由基，且基片表面受到離子的撞擊也會較高化學活性，故可促進基片表面的化學反應速率，因此在CVD技術領域中已存在一種電漿增強(輔助)CVD(PECVD，Plasma Enhanced CVD)技術，PECVD技術已廣泛應用於氧化物與氮化物薄膜沈積。PECVD技術的沈積原理與一般的CVD技術並無太大差異，但PECVD技術具有能在 較低溫度沈積薄膜的優點。此外，PECVD技術領域中亦存在一種遠端(Remote)PECVD技術，即在反應室外方設置一電漿產生室，在本案中稱為遠端電漿產生裝置，使源材料以氣體形式先通入該電漿產生裝置中，供可利用微波方式或射頻功率方式以形成電漿源，再將該電漿源引進反應室內供進行沈積成膜製程。
在CVD、PECVD或遠端PECVD等相關技術領域中，已存在一些先前技術，如US5,908,602、US6,444,945、US2006/0177599、US申請案號61/137,839(即TWI532414)等；其中，大多數習知的PECVD裝置係用於小規模(即小於1平方公尺)沈積，此乃因大多數電漿源極短而只可塗布小面積。其中US 6,444,945雖揭示一種基於平行電子發射表面(即二平行電極板)之電漿源，但消耗較多能量而相對提高製作成本；US申請案號61/137,839則揭示分別產生線性及二維電漿供適用於PECVD之電漿源。
在電漿技術中電漿源乃是PECVD系統的關鍵。以使用的功率源而言，目前產生電漿的方法存在有直流(DC)放電、低頻及中頻放電、射頻(RF)放電、及微波放電。然而，習知遠端PECVD系統所揭示的電漿產生裝置存有下列缺點：其一是，就一可實際運作之遠端PECVD系統而言，其電漿產生裝置所採用之電漿產生方法已被預先限定，即該電漿產生裝置常被限定於直流(DC)放電、射頻(RF)放電、微波放電中之一種，使製程氣體、源材料(或薄膜先前物)或沈積材及其所沈積形成之薄膜也相對受到限制，也就是電漿產生方法已被設定之電漿產生裝置勢必無法適用於不同族的沈積材；其二是，習知遠端PECVD系統中之電漿產生裝置一般只設一製程氣體入口，相對限制了源材料(或稱薄膜先前物、反應源)或製 程氣體之種類，因而使其一沈積製程也只能製作一層沈積材，相對減損該遠端PECVD系統之製程效率；其三是，當一遠端PECVD系統之電漿產生裝置已設定為直流(DC)放電、射頻(RF)放電、微波放電中之一種電漿產生方法時，相對使在該電漿產生裝置之室腔中所產生之電漿源，無法維持或符合該遠端PECVD製程之最佳要求，例如無法有效地控制電漿密度，以致容易造成電漿密度較低或電漿之空間分佈的均勻度不佳等缺點，相對減損該遠端PECVD系統之製程效率。
因此，對一遠端PECVD系統而言，如何提昇其電漿產生裝置所產生之電漿源的品質以符合製程需要，進而提昇該遠端PECVD系統之製程效率，此乃本發明主要解決的課題。
本發明主要目的乃在於提供一種遠端電漿增強化學氣相沈積(PECVD)系統之電漿產生裝置，其係針對一遠端PECVD系統提供一電漿產生裝置，該電漿產生裝置係同時且隔離地設置一直流(DC)放電單元、一射頻(RF)放電單元及一微波放電單元，並使該直流(DC)放電單元、該射頻(RF)放電單元及該微波放電單元得在使用該遠端電漿增強化學氣相沈積(PECVD)系統時能同步產生放電作用，藉以對進入該遠端電漿產生裝置之製程氣體進行作用以產生符合要求的電漿源，藉以提昇該遠端PECVD系統之使用效率及其製程效率。
為達成上述目的，本發明之遠端電漿增強化學氣相沈積(PECVD)系統之電漿產生裝置一優選實施例，乃係在該電漿產生裝置同時且隔離地設置三種放電單元，包含：一直流(DC)放電單元，其直流(DC) 強度為17KVA/m±20%；一射頻(RF)放電單元，其射頻(RF)強度為12000MHZ 130A/m±6%；及一微波放電單元，其射頻(RF)強度為150db/w，並使該直流(DC)放電單元、該射頻(RF)放電單元及該微波放電單元得在該遠端電漿增強化學氣相沈積(PECVD)系統在運作時能同步產生放電作用，藉以對進入該遠端電漿產生裝置之源材料(或稱薄膜先前物、反應源)或製程氣體進行放電作用以產生符合要求的電漿源，藉以提昇該遠端PECVD系統之使用效率及其製程效率。
在本發明一實施例中，本發明之電漿產生裝置進一步採用惰性氣體中之氬(Ar)作為製程氣體，其強度為3~20cc/min，藉以有利於產生符合要求的電漿源。
在本發明一實施例中，本發明之電漿產生裝置進一步可利用至少一製程氣體入口，如本發明之電漿產生裝置得利用二或三個製程氣體入口，使在一沈積製程中增加源材料(薄膜先前物、反應源)或製程氣體之種類，藉以使一沈積製程能同時製作至少一層之沈積材。
1‧‧‧遠端電漿增強化學氣相沈積(PECVD)系統
10‧‧‧反應室
11‧‧‧製程氣體入口
12‧‧‧副產品抽出口
13‧‧‧平台
14‧‧‧平台面
20‧‧‧基片
30‧‧‧電漿30
40‧‧‧第一電場裝置
50‧‧‧第二電場裝置
60‧‧‧射頻磁場裝置
70‧‧‧遠端電漿產生裝置
71‧‧‧射頻放電單元
72‧‧‧直流放電單元
73‧‧‧微波放電單元
第1圖係本發明之電漿產生裝置所應用之遠端電漿增強化學氣相沈積(PECVD)系統一優選實施例之結構剖面示意圖。
第2圖係本發明之電漿產生裝置一實施例之結構剖面示意圖。
為使本發明更加明確詳實，茲列舉較佳實施例並配合下列圖示，將本發明之結構及其技術特徵詳述如後；其中在圖式中各部件的尺 寸並非依實際比例繪示：參考第1圖所示，本發明之電漿產生裝置70係應用於一遠端電漿增強化學氣相沈積(PECVD)系統1中使用。該遠端PECVD系統1可利用習知的遠端PECVD系統來作成但非用以限制本發明。習知的遠端PECVD系統一般包含一反應室10及一遠端電漿產生裝置70，其中該反應室10一般包含：一製程氣體入口11，其中該製程氣體包含源材料(或稱反應源、薄膜先前物)之氣體形式；一副產品抽出口12，如利用真空泵浦以使氣體副產品流出於反應室10之外；一平台13，其可用於加熱；一平台面14，其設在該平台13上，供用以承置至少一基片20。其中該製程氣體入口11係連通至該遠端電漿產生裝置70，用以使該源材料或製程氣體先進入該遠端電漿產生裝置70中以產生電漿源30，再使所產生之電漿源30引入該反應室10中以進行沈積成膜製程。
參考第2圖所示，本發明係一種遠端PECVD系統1之電漿產生裝置70，其主要特徵在於：在該遠端電漿產生裝置70上同時且隔離地設置有一射頻(RF)放電單元71、一直流(DC)放電單元72、及一微波放電單元73，並使該射頻(RF)放電單元71、該直流(DC)放電單元72及該微波放電單元73能在該遠端PECVD系統1進行運作時同步產生放電作用，藉以對進入該遠端電漿產生裝置70之源材料或製程氣體進行放電作以產生符合要求的電漿源30，藉以提昇該遠端PECVD系統1之使用效率及其製程效率。至於該射頻(RF)放電單元71、該直流(DC)放電單元72及該微波放電單元73在第2圖中之設置位置及/或結構型態(如線圈結構)並非依實際結構或比例繪示，且該等放電單元(71、72、73)得依現有電子技術予以妥善安排並 完成，故第2圖所示並非用以限制本發明。
在本發明之電漿產生裝置70一實施例中，該射頻(RF)放電單元71之射頻(RF)強度可設定為12000MHZ 130A/m±6%；該直流(DC)放電單元72之直流(DC)強度可設定為17KVA/m±20%；該微波放電單元73之射頻(RF)強度可設定為150db/w，藉由上述功率源數據以對進入該遠端電漿產生裝置70之源材料(或稱薄膜先前物、反應源)或製程氣體能進行放電作用，藉以產生符合要求之較佳電漿源30。
在本發明之電漿產生裝置70一實施例中，該電漿產生裝置70進一步可採用惰性氣體中之氬(Ar)氣以作為製程氣體(如氬氣電漿)，且該氬(Ar)氣之強度可設定為3~20cc/min，藉以有利於使該電漿產生裝置70能產生符合要求的較佳電漿源30。
在本發明之電漿產生裝置70一實施例中，該電漿產生裝置70進一步設有至少一製程氣體入口11，如第2圖所示，該電漿產生裝置70係設有三個製程氣體入口11但不限制，用以分別引入不同之源材料(薄膜先前物、反應源)或製程氣體，供可在一沈積製程中增加源材料(薄膜先前物、反應源)或製程氣體之種類，藉以使一沈積製程能同時製作至少一層或以上之沈積材。
此外，為了配合該電漿產生裝置70以增進該遠端PECVD系統1之製程效率，可針對該反應室10進一步設置至少一輔助裝置。該反應室10所設之至少一輔助裝置係包含至少一電場裝置，其中該至少一電場裝置係包含一設在該反應室10之內腔的環周緣壁上的第一電場裝置40如第1圖所示，該第一電場裝置40係利用射頻電流通過線圈來形成電場，使其所形成 之電場可以對該反應室10中的電漿30產生電性吸力效應，使該電漿30中的源材料或薄膜先前物得在吸附並沈積於該基片20至少一表面上以形成薄膜之前，由該反應室10之中央(如第1圖中Z軸所示)朝外環周緣擴張移動，藉以增進沈積薄膜的均勻性。在本實施中，該第一電場裝置40係利用射頻電流通過線圈來形成電場，其中該射頻可依源材料密度而選用不同射頻，如包含：700v/m±6%、1300v/m±6%、或1900v/m±6%，但非用以限制本發明。
此外，該反應室10的輔助裝置更包含一設在該反應室10中該平台面14下方的第二電場裝置50，其係利用射頻電流通過一螺旋狀線圈(以Z軸為中心繞設如第1圖所示)來形成電場，使該第二電場裝置50所形成之電場可以對在反應室10內之電漿30產生電性吸力效應，使該電漿30中之源材料或薄膜先前物得藉該電性吸力效應而吸附並沈積於該基片20至少一表面上。通常在操作時，是先關閉該第一電場裝置40的電場效應後，再啟動該第二電場裝置50的電場效應，也就是，該第一電場裝置40及該第二電場裝置50得分別設置或實施。由於該第二電場裝置50在啟動後，其所形成之電場效應可以主動地對在反應室10內之電漿30產生電性吸力效應，可以迫使該電漿30中之源材料或薄膜先前物得加速或較快速地吸附並沈積於該基片20至少一表面上，故可以有效控制及減小沈積薄膜的厚度。此外，在本實施中，該第二電場裝置50係利用射頻電流通過一螺旋狀線圈(以Z軸為中心繞設)來形成電場，其中該射頻可依源材料氣相層濃度而選用不同射頻，如包含：90uv/m±4.5%、500uv/m±4.5%、或1100v/m±4.5%，但非用以限制本發明。
此外，該反應室10的輔助裝置更包含一射頻磁場裝置60，該射頻磁場裝置60係設在該反應室10中該平台面14的中央(如第1圖中Z軸所示)下方處，用以控制沈積於基片20至少一表面上之磊晶角度。
以上所述僅為本發明的優選實施例，對本發明而言僅是說明性的，而非限制性的；本領域普通技術人員理解，在本發明權利要求所限定的精神和範圍內可對其進行許多改變，修改，甚至等效變更，但都將落入本發明的保護範圍內。

Claims (9)

  1. 一種遠端電漿增強化學氣相沈積(PECVD)系統之遠端電漿產生裝置，該遠端PECVD系統係包含一反應室及一遠端電漿產生裝置，其中該反應室包含一製程氣體入口其中該製程氣體包含源材料膜先前物之氣體形式；一副產品抽出口其係利用真空泵浦以使氣體副產品流出於反應室之外；一平台其係用於加熱；一平台面，其設在該平台上供用以承置至少一基片；其中該製程氣體入口係連通至該遠端電漿產生裝置，用以使該源材料或製程氣體先進入該遠端電漿產生裝置中以產生電漿源，再使所產生之電漿源引入該反應室中以進行沈積成膜製程；其特徵在於：在該電漿產生裝置上同時且互相隔離地設置有一直流(DC)放電單元、一射頻(RF)放電單元及一微波放電單元，並使該直流(DC)放電單元、該射頻(RF)放電單元及該微波放電單元得在該遠端電漿增強化學氣相沈積(PECVD)系統進行運作時能同步產生放電作用，藉以對進入該遠端電漿產生裝置之製程氣體進行作用以產生電漿源。
  2. 如請求項1所述之遠端電漿產生裝置，其中該射頻(RF)放電單元之射頻(RF)強度係設定為12000MHZ 130A/m±6%。
  3. 如請求項1所述之遠端電漿產生裝置，其中該直流(DC)放電單元之直流(DC)強度係設定為17KVA/m±20%。
  4. 如請求項1所述之遠端電漿產生裝置，其中該微波放電單元之射頻(RF)強度係設定為150db/w。
  5. 如請求項1所述之遠端電漿產生裝置，其中該電漿產生裝置進一步採用惰性氣體氬(Ar)氣以作為製程氣體，且該氬氣之強度係設定為3~20 cc/min。
  6. 如請求項1所述之遠端電漿產生裝置，其中該電漿產生裝置進一步設有兩個或以上之製程氣體入口，供用以分別引入不同之源材料或製程氣體。
  7. 如請求項1所述之遠端電漿產生裝置，其中該遠端PECVD系統之反應室進一步設置有一電場裝置，其中該電場裝置係包含一設在該反應室之內腔的環周緣壁上的第一電場裝置，該第一電場裝置係利用射頻電流通過線圈來形成電場，使其所形成之電場可以對該反應室中的電漿源產生電性吸力效應，使該電漿源中的源材料或薄膜先前物得在吸附並沈積於該基片至少一表面上以形成薄膜之前，由該反應室之中央朝外環周緣擴張移動；其中該第一電場裝置係利用射頻電流通過線圈來形成電場，其中該射頻係依源材料密度而選用不同射頻，包含：700v/m±6%、1300v/m±6%、或1900v/m±6%。
  8. 如請求項1所述之遠端電漿產生裝置，其中該遠端PECVD系統之反應室進一步設置有一電場裝置，其中該電場裝置係包含一設在該反應室中該平台面下方的第二電場裝置，其係利用射頻電流通過一螺旋狀線圈來形成電場，使該第二電場裝置所形成之電場可以對在反應室內之電漿產生電性吸力效應，使該電漿中之源材料或薄膜先前物得藉該電性吸力效應而吸附並沈積於該基片至少一表面上；其中該第二電場裝置係利用射頻電流通過一螺旋狀線圈來形成電場，其中該射頻係依源材料氣相層濃度而選用不同射頻，包含：90uv/m±4.5%、500uv/m±4.5%、或1100v/m±4.5%。
  9. 如請求項1所述之遠端電漿產生裝置，其中該遠端PECVD系統之反應室進一步設置有一射頻磁場裝置，該射頻磁場裝置係設在該反應室中該平台面的中央下方處，用以控制沈積於基片至少一表面上之磊晶角度。
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