TW201809689A - Method for acquiring data indicating electrostatic capacitance - Google Patents

Abstract

In a method for acquiring data indicating an electrostatic capacitance between a focus ring and a measuring device includes a disc-shaped base substrate, sensor units arranged along an edge of the base substrate and a circuit substrate mounted on the base substrate, a processor acquires one or more first data sets respectively including a plurality of digital values indicating an electrostatic capacitance of a corresponding sensor unit. The measuring device is transferred to a region on the mounting table surrounded by the focus ring. The processor acquires second data sets when one or more digital values or an average of the digital values included in each of said one or more first data sets exceeds a first threshold. The processor stores measurement data including the respective second data sets or averages of the digital values of each of the second data sets. The measuring device is unloaded from the chamber.

Description

Method for obtaining data representing electrostatic capacitance

An embodiment of the present invention relates to a method for obtaining data on an electrostatic capacitance between a measuring device and a focusing ring that are transported into a chamber by a transport device of a processing system.

In the manufacture of electronic components called semiconductor components, a processing system having a program module for processing a work piece is used. The program module generally includes a chamber body and a mounting table. In addition, the processing system is provided with a conveying device. The object to be processed is transferred into the chamber provided by the chamber body by the transfer device, and is placed on the mounting table. Then, the workpiece is processed in the chamber.

The position of the object to be processed on the mounting table is an important element for satisfying various requirements of the object to be processed called uniformity in the processing surface. Therefore, the transfer device needs to transfer the workpiece to an appropriate position on the mounting table. In the case where the processed object is not transferred to an appropriate position, it is necessary to correct the coordinate information of a specific transfer position of the transfer device.

In order to correct the coordinate information, it is necessary to detect the position of the workpiece on the mounting table. In the past, such a position was detected using a measuring device for measuring electrostatic capacitance. The detection system of the position where such a measuring device is used is described in, for example, Patent Document 1 described below. In addition, the measuring device described in Patent Document 1 wirelessly transmits the measured capacitance to a control unit provided outside the chamber.

In addition, Patent Document 2 describes a wireless sensor which is arranged in a chamber of a program module and wirelessly transmits data measured in the program to a receiver provided outside the chamber.

[Previous Technical Literature]

[Patent Literature]

Patent Document 1: Japanese Patent No. 4956328

Patent Document 2: Japanese Patent No. 4251814

In addition, since the chamber body is generally made of metal, the measurement devices arranged in the chamber and the machines arranged outside the chamber cannot perform wireless communication. Therefore, the measurement device needs to acquire the measurement data autonomously and memorize the measurement data while in the chamber. In order to perform the autonomous operation of such a measuring device, the measuring device needs to be provided with a power source called a battery. It is necessary to suppress the power consumption of this power supply.

In one aspect, a method is provided for obtaining data representing electrostatic capacitance. In this method, the electrostatic capacitance between the measuring device and the focus ring that are transported into the chamber by the transport device of the processing system is obtained. The processing system includes a program module, the transfer device, and a control unit. The program module includes a chamber body and a mounting table. The chamber body provides a chamber. The mounting table is set in the chamber, and a measuring device is placed on the mounting table. The control unit controls the conveying device.

The measuring device includes a base substrate, a plurality of sensing portions, and a circuit substrate. The base substrate has a disc shape. The plurality of sensing portions are arranged along the edge of the base substrate. The circuit board is mounted on a base substrate. Each of the plurality of sensing portions has a front surface extending along an edge of the base substrate. The circuit board has a high-frequency oscillator, a plurality of C / V conversion circuits, an A / D converter, a processor, a memory device, a communication device, and a power source. The high-frequency oscillator is configured to generate a high-frequency signal and is electrically connected to the sensing electrodes of each of the plurality of sensing portions. The complex C / V conversion circuit is configured to convert a voltage amplitude of a sensing electrode of a corresponding sensing portion of the complex sensing portion into a voltage signal representing an electrostatic capacitance. The A / D converter is configured to convert a voltage signal output from each complex C / V conversion circuit into a digital value. The processor is connected to the A / D converter. The memory device is connected to the processor. The communication device is configured to wirelessly transmit data stored in the memory device. The power supply system is configured to supply power to a processor, a high-frequency oscillator, and a communication device.

One aspect-related method includes: (i) the processor obtains more than one first data set at a preset time interval, and each of the more than one first data set includes using the first sampling period The process of obtaining the digital value indicating the electrostatic capacitance of the corresponding sensing part of one or more of the sensing parts included in the complex sensing part, and obtaining the complex digital value; (ii) transferring the measuring device to the mounting table by a transfer device The process of focusing on the area surrounded by the focus ring; (iii) responding to one or more of the plurality of digit values contained in each of the first data group or each of the more than one of the first data group The average value of the plurality of digit values will be above the first threshold, and the processor will obtain a plurality of second data sets during the measurement period, and each of the plurality of second data sets includes a second sampling during the measurement period. A process of obtaining a digital value representing the electrostatic capacitance of the corresponding sensing part of the complex sensing part periodically, and obtaining the complex digital value; (iv) the processor stores the measurement data in a memory device, and the measurement data includes A process of obtaining a complex mean value obtained by obtaining a complex mean value of the plurality of second data sets or the plurality of digit values included in each of the plurality of second data sets; and (v) a process of removing the measuring device from the chamber by a transfer device.

In one aspect-related method, a measuring device having a plurality of sensing electrodes arranged along the edge of a disc-shaped base substrate is used, and the distance between the inner edge of the focusing ring and the edge of the measuring device in a peripheral direction is obtained. Distributed measurement data. In addition, the digital value representing the electrostatic capacitance of each of the plurality of sensing electrodes becomes larger when the area surrounded by the focus ring has a measuring device. In this method, the measurement data is not always obtained, but more than one first data set is obtained at a preset time interval in a period before the measurement period. Then, when one or more of the plurality of digit values included in each of the first data group or the average of the plurality of digit values included in each of the first data group is equal to or greater than the first threshold, the measurement period Acquire the second data set, and then memorize the measurement data. In this way, in this method, the measuring device performs intermittent operations in a period before the measurement period, so that the power consumption of the measuring device can be suppressed.

In one embodiment, the method further includes: (vi) after the measurement period ends, the processor will obtain more than one third data set at a preset time interval, each of which is more than one third data set And (vii) responding to each step including obtaining a digital value of the electrostatic capacitance of the corresponding sensing part of one or more sensing parts included in the complex sensing part with a third sampling period; and (vii) responding to each One or more of the plural digit values included in the third data group or the average value of the plural digit values included in the third data group will become the second threshold or more, and the processor will measure the Data is transmitted wirelessly to the communication device.

The measuring instruments carried out of the chamber are stored in a container called a wafer transfer cassette (FOUP). When in this container, the electrostatic capacitance of the sensing electrodes of the plurality of sensing sections increases. Therefore, by responding to the situation where one or more of the plural digital digit values included in each of the third data sets or the plural digital digit values included in each of the third data sets becomes the second threshold or more, By wirelessly transmitting the measurement data to the communication device, the measurement device can automatically transmit the measurement data wirelessly when it is outside the chamber. In addition, according to this embodiment, it is possible to perform measurement after the measurement period. The meter performs intermittent operations, so it can further suppress the power consumption of the power supply of the meter.

In one embodiment, the supply of power from the power source to the high-frequency oscillator can be stopped between a period during which one or more first data sets are acquired and a period during which one or more first data sets are subsequently obtained. Further, in one embodiment, the supply of power from the power source to the high-frequency oscillator can be stopped between a period in which one or more third data sets are acquired and a period in which one or more third data sets are subsequently obtained.

In one embodiment, in the process of transporting the measuring device, the control unit controls the transporting device so that the measuring device is transported to a predetermined coordinate information transport position. The method of this embodiment mode further includes a process in which the control unit corrects the coordinate information in such a manner that the gap between the focus ring specified by the measurement data and the edge of the measuring device in the peripheral direction is reduced.

As described above, it is possible to suppress the power consumption of the power source of the measuring instrument in obtaining the measurement data indicating the electrostatic capacitance between the measuring instrument and the focus ring.

1‧‧‧treatment system

LM‧‧‧Loading Module

AN‧‧‧Positioner

LL1, LL2‧‧‧ with interlocking module

TF‧‧‧ Transfer Module

TU1, TU2‧‧‧ transporting device

PM1 ~ PM6‧‧‧program module

MC‧‧‧Control Department

10‧‧‧ Plasma treatment device

12‧‧‧ chamber body

30‧‧‧upper electrode

40‧‧‧Gas source group

50‧‧‧Exhaust

62‧‧‧The first high-frequency power supply

64‧‧‧ 2nd high frequency power supply

PD‧‧‧mounting table

LE‧‧‧Lower electrode

ESC‧‧‧ Electrostatic Fixture

FR‧‧‧Focus ring

P1‧‧‧Part 1

P2‧‧‧Part 2

100‧‧‧ measuring instrument

102‧‧‧ base substrate

104‧‧‧Induction Department

104A ~ 104H‧‧‧Sensor

104f‧‧‧Front end face

141‧‧‧electrode

141a‧‧‧Part 1

142‧‧‧electrode

142a‧‧‧Part 2

143‧‧‧electrode

143f‧‧‧ front

106‧‧‧circuit board

108, 108A ~ 108H‧‧‧Wiring Group

161‧‧‧High Frequency Oscillator

162‧‧‧C / V conversion circuit

162A ~ 162H‧‧‧C / V conversion circuit

163‧‧‧A / D converter

164‧‧‧Processor

165‧‧‧Memory device

167‧‧‧Power

GL‧‧‧Earth potential line

FIG. 1 is a flowchart showing a method for measuring an electrostatic capacitance according to an embodiment.

FIG. 2 is a diagram illustrating a processing system.

Fig. 3 is a sectional view illustrating a container.

FIG. 4 is a perspective view illustrating a positioner.

FIG. 5 is a diagram showing an example of a plasma processing apparatus.

Fig. 6 is a perspective view illustrating a measuring device.

FIG. 7 is a perspective view showing an example of the sensing portion.

FIG. 8 is a cross-sectional view taken along the line VIII-VIII of FIG. 7.

FIG. 9 is a cross-sectional view taken along the line IX-IX of FIG. 8.

FIG. 10 is a diagram illustrating a configuration of a circuit board of the measuring device.

FIG. 11 is a timing diagram related to the method shown in FIG. 1.

FIG. 12 is a longitudinal sectional view showing another example of the sensing portion.

FIG. 13 is a longitudinal sectional view showing still another example of the sensing portion.

FIG. 14 is a diagram illustrating a configuration of a circuit board of a measuring device according to another embodiment.

Hereinafter, various embodiments will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals.

FIG. 1 is a flowchart showing a method for measuring an electrostatic capacitance according to an embodiment. The method MT shown in FIG. 1 is a method of obtaining data representing the electrostatic capacitance between a measuring device and a focusing ring that are transported into a chamber by a transport device of a processing system. In one embodiment, the method MT uses the acquired data to correct the coordinate information of the transfer position of the transfer device.

FIG. 2 is a diagram illustrating a processing system. The processing system 1 shown in FIG. 2 is a processing system to which the method MT can be applied. The processing system 1 is provided with a table 2a to 2d, containers 4a to 4d, a load module LM, a positioner AN, a load interlock module LL1, LL2, a program module PM1 to PM6, a transfer module TF, and a control unit. MC. In addition, the number of stations 2a to 2d, the number of containers 4a to 4d, the number of interlocking modules LL1, LL2, and the number of program modules PM1 to PM6 are not limited, and may be any one or more number.

The tables 2a to 2d are arranged along one edge of the loading module LM. The containers 4a to 4d are mounted on the tables 2a to 2d, respectively. Each of the containers 4a to 4d is a container called a FOUP (Front Opening Unified Pod), for example. Each container 4a-4d is comprised so that the to-be-processed object W may be accommodated. The workpiece W has a slightly disc shape.

Fig. 3 is a sectional view illustrating a container. Fig. 3 is a longitudinal sectional view showing a container 4 which can be used for each of the containers 4a to 4d. As shown in FIG. 3, the container 4 includes a container body 4M and a pair of support members 4S. The container body 4M will provide space in its interior. A pair of support members 4S are provided along a pair of side walls of the container body 4M in a space provided by the container body 4M. A pair of support members 4S is provided with a plurality of slots 4L. The plurality of slots 4L are arranged in a vertical direction and extend toward the inside of the space provided by the container body 4M. Each of the plurality of slots 4L is capable of accommodating the workpiece W. Any workpiece W stored in the plurality of slots 4L is supported by a pair of support members 4S.

Returning to FIG. 2, the loading module LM is a chamber wall having a transfer space defining an atmospheric pressure state in its internal region. A transport device TU1 is provided in this transport space. The transfer device TU1 is, for example, a multi-joint robot, and is controlled by the control unit MC. The transfer device TU1 is configured between the containers 4a to 4d and the positioner AN, the positioner AN and the load interlocking module LL1 to LL2, and the load interlocking module LL1 to LL2 and the container 4a to 4d. The workpiece W is transported.

The positioner AN is connected to the loading module LM. The positioner AN is configured to adjust the position (position correction) of the workpiece W. FIG. 4 is a perspective view illustrating a positioner. Positioner AN system has support The stand 6T, the driving device 6D, and the sensor 6S. The support table 6T is a table rotatable along the axis center extending in the vertical direction, and is configured to support the workpiece W thereon. The supporting table 6T is rotated by the driving device 6D. The driving device 6D is controlled by the control unit MC. When the supporting table 6T is rotated by the power from the driving device 6D, the workpiece W placed on the supporting table 6T is also rotated.

The sensor 6S is an optical sensor that detects the edge of the workpiece W while the workpiece W is being rotated. The sensor 6S detects the deviation of the angular position of the notch WN (or other marks) of the workpiece W from the reference angular position from the detection result of the edge, and the center position of the workpiece W relative to the reference angle position. The offset of the reference position. The sensor 6S outputs the shift amount of the angular position of the notch WN and the shift amount of the center position of the workpiece W to the control unit MC. The control unit MC calculates the rotation amount of the support table 6T for correcting the angular position of the notch WN to the reference angular position based on the deviation of the angular position of the notch WN. The control unit MC controls the drive device 6D such that the support table 6T is rotated by a certain amount of this rotation amount. Thereby, the angular position of the notch WN can be corrected to the reference angular position. The control unit MC is configured so that the center position of the workpiece W coincides with a predetermined position on an end effector of the conveying device TU1, and is based on the offset of the center position of the workpiece W. Controls the position of the end effector of the transporting device TU1 when the workpiece W is received from the positioner AN.

Returning to FIG. 2, each of the loading interlocking module LL1 and the loading interlocking module LL2 is disposed between the loading module LM and the transfer module TF. Each load interlocking module LL1 and load interlocking module LL2 are provided with a preliminary decompression chamber. A gate valve is provided between the loading interlocking module LL1 and the loading module LM. The pre-compression chamber of the interlocking module LL1 and the transport space of the loading module LM are communicated by opening the gate valve, and are separated from each other by closing the gate valve. Further, another gate valve is provided between the load interlocking module LL2 and the load module LM. The pre-compression chamber of the interlocking module LL2 and the transfer space of the loading module LM are communicated by opening the gate valve, and are separated from each other by closing the gate valve.

The transfer module TF is connected to the load interlocking module LL1 and the load interlocking module LL2 through a gate valve. The transfer module TF provides a decompression chamber that can be decompressed. This decompression chamber is provided with a transport device TU2. The transport device TU2 is, for example, an articulated robot, and is controlled by the control unit MC. The transfer device TU2 is configured to transfer the object W between the load interlocking modules LL1 to LL2 and the program modules PM1 to PM6 and between any two program modules among the program modules PM1 to PM6.

Each program module PM1 ~ PM6 is connected to the transfer module TF through a gate valve. Program modules PM1 to PM6 are processing devices configured to perform a so-called plasma treatment on the workpiece W. The chambers of the program modules PM1 to PM6 and the decompression chamber of the transfer module TF are communicated by opening the gate valve, and are separated from each other by closing the gate valve.

A series of actions when processing the workpiece W in this processing system 1 is exemplified below. The transfer device TU1 of the loading module LM takes out the processed object W from any of the containers 4a to 4d, and transfers the processed object W to the positioner AN. Next, the transfer device TU1 takes out the processed object W after adjusting its position from the positioner AN, and transfers the processed object W to one of the load interlock module LL1 and the load interlock module LL2 Load the interlocking module. Then, one of the loading interlocking modules decompresses the pressure in the preliminary decompression chamber to a predetermined pressure. Next, the transfer device TU2 of the transfer module TF takes out the processed object W from one of the interlocking modules, and transfers the processed object W to any of the program modules PM1 to PM6. Then, one or more of the program modules PM1 to PM6 process the workpiece W. Then, the transfer device TU2 transfers the processed object W from the program module to the load interlock module of one of the load interlock module LL1 and the load interlock module LL2. Next, the transfer device TU1 transfers the workpiece W from one of the loading interlocking modules to any one of the containers 4a to 4d.

As described above, this processing system 1 includes a control unit MC. The control unit MC may be a computer including a processor, a memory device called a memory, a display device, an input / output device, a communication device, and the like. One of the series of actions of the processing system 1 described above is implemented according to the program stored in the memory device, and is controlled by each part of the processing system 1 caused by the control part MC.

FIG. 5 is a diagram showing an example of a plasma processing apparatus that can be used by any of the program modules PM1 to PM6. The plasma processing apparatus 10 shown in FIG. 5 is a capacitive coupling type plasma etching apparatus. The plasma processing apparatus 10 includes a chamber body 12 having a substantially cylindrical shape. The chamber body 12 is formed of, for example, aluminum, and an inner wall surface thereof may be anodized. The chamber body 12 is grounded.

A support portion 14 having a substantially cylindrical shape is provided on the bottom of the chamber body 12. The support portion 14 is made of, for example, an insulating material. The support portion 14 is disposed in the chamber body 12 and extends upward from the bottom of the chamber body 12. A mounting table PD is provided in the chamber S provided in the chamber body 12. The mounting table PD is supported by the support portion 14.

The mounting table PD includes a lower electrode LE and an electrostatic clamp ESC. The lower electrode LE includes a first plate 18a and a second plate 18b. The first plate body 18a and the second plate body 18b are made of, for example, a metal called aluminum, and have a substantially disc shape. The second plate body 18b is installed on the first plate body 18a, Sexually connected to the first plate 18a.

An electrostatic clamp ESC is provided on the second plate body 18b. The electrostatic clamp ESC has a structure in which an electrode that is a conductive film is disposed between a pair of insulating layers or insulating sheets, and has an approximately disc shape. The electrode of the electrostatic clamp ESC is electrically connected to a DC power source 22 through a switch 23. This electrostatic jig ESC adsorbs the workpiece W by an electrostatic force such as a Coulomb force generated by a DC voltage from the DC power source 22. This allows the electrostatic fixture ESC to hold the workpiece W.

A focus ring FR is provided on the peripheral portion of the second plate body 18b. This focusing ring FR is provided so as to surround the edge of the workpiece W and the electrostatic clamp ESC. The focus ring FR includes a first portion P1 and a second portion P2 (see FIG. 8). The first part P1 and the second part P2 have an annular plate shape. The second part P2 is provided on the first part P1. The inner edge P2i of the second portion P2 has a diameter larger than the diameter of the inner edge P1i of the first portion P1. The object to be processed W is placed on the electrostatic clamp ESC so that its edge region is located on the first part P1 of the focus ring FR. The focusing ring FR can be formed of any of various materials including silicon, silicon carbide, and silicon oxide.

A refrigerant flow path 24 is provided inside the second plate body 18b. The refrigerant flow path 24 constitutes a temperature control mechanism. The refrigerant passage 24 is supplied with a refrigerant through a cooler unit provided outside the chamber body 12. The refrigerant supplied to the refrigerant flow path 24 is returned to the cooler unit through the pipe 26b. In this way, refrigerant is circulated between the refrigerant flow path 24 and the cooler unit. By controlling the temperature of the refrigerant, the temperature of the workpiece W supported by the electrostatic clamp ESC is controlled.

The plasma processing apparatus 10 is provided with a gas supply line 28. The gas supply line 28 supplies a heat-conducting gas such as He gas from the heat-conducting gas supply mechanism between the upper surface of the electrostatic clamp ESC and the inner surface of the workpiece W.

The plasma processing apparatus 10 includes an upper electrode 30. The upper electrode 30 is disposed above the mounting table PD so as to face the mounting table PD. The upper electrode 30 is supported by the upper portion of the chamber body 12 through the insulating shielding member 32. The upper electrode 30 may include a top plate 34 and a support body 36. The top plate 34 faces the chamber S, and the top plate 34 is provided with a plurality of gas ejection holes 34a. The top plate 34 may be formed of silicon or quartz. Alternatively, the top plate 34 can be formed by forming a plasma-resistant film called yttrium oxide on the surface of an aluminum base material.

The support body 36 supports the top plate 34 in a detachable manner, and may be made of, for example, a conductive material called aluminum. The support body 36 may have a water-cooled structure. A gas diffusion chamber 36 a is provided inside the support body 36. From this gas diffusion chamber 36a, a plurality of gas flow holes 36b communicating with the gas ejection holes 34a. Will extend downward. In addition, the support body 36 is formed with a gas introduction port 36c for guiding a process gas to the gas diffusion chamber 36a, and the gas introduction port 36c is connected with a gas supply pipe 38.

The gas supply pipe 38 is connected to a gas source group 40 through a valve group 42 and a flow controller group 44. The gas source group 40 includes a plurality of gas sources for a plurality of types of gases. The valve group 44 includes a plurality of valves, and the flow controller group 44 includes a plurality of flow controllers called mass flow controllers. The plurality of gas sources of the gas source group 40 are connected to the gas supply pipe 38 through a valve corresponding to the valve group 42 and a flow controller corresponding to the flow controller group 44 respectively.

In addition, the plasma processing apparatus 10 is detachably provided with a deposition protection body 46 along the inner wall of the chamber body 12. The deposition protection body 46 is also provided on the outer periphery of the support portion 14. The deposition protector 46 prevents the etching by-products (deposits) from adhering to the chamber body 12, and can be formed by coating an aluminum material with ceramic such as Y ₂ O ₃ .

An exhaust plate 48 is provided between the bottom side of the chamber body 12 and the support portion 14 and the side wall of the chamber body 12. The exhaust plate 48 can be formed by, for example, coating ceramics such as Y ₂ O ₃ on an aluminum material. The exhaust plate 48 is formed with a plurality of holes passing through the plate thickness direction. An exhaust port 12e is provided below the exhaust plate 48 and the chamber body 12. The exhaust port 12e is connected to an exhaust device 50 through an exhaust pipe 52. The exhaust device 50 is a vacuum pump having a pressure regulating valve, a turbo molecular pump, and the like, and can decompress the space in the chamber body 12 to a desired vacuum degree. The side wall of the chamber body 12 is provided with a carrying-out inlet 12g of the workpiece W. The carrying-out inlet 12g can be opened and closed by a gate valve 54.

The plasma processing apparatus 10 further includes a first high-frequency power source 62 and a second high-frequency power source 64. The first high-frequency power source 62 is a power source that generates a first high-frequency for plasma generation, and generates a high-frequency having a frequency of 27 to 100 MHz, for example. The first high-frequency power source 62 is connected to the upper electrode 30 through the matching device 66. The matching unit 66 includes a circuit for matching the output impedance of the first high-frequency power source 62 and the input impedance of the load side (upper electrode 30 side). In addition, the first high-frequency power source 62 may be connected to the lower electrode LE through the matching unit 66.

The second high-frequency power source 64 is a power source that generates a second high-frequency power for attracting ions to the workpiece W. For example, the second high-frequency power source 64 generates a high frequency in a frequency range of 400 kHz to 13.56 MHz. The second high-frequency power supply 64 is connected to the lower electrode LE through the matching device 68. The matching device 68 has a circuit for matching the output impedance of the second high-frequency power supply 64 and the input impedance of the load side (the lower electrode LE side).

This plasma processing apparatus 10 supplies gas from one or more selected gas sources to the chamber S. The pressure in the chamber S is set to a predetermined value by the exhaust device 50. pressure. Further, the gas in the chamber S is excited by the first high frequency from the first high frequency power source 62. As a result, plasma is generated. Then, the processed object W is processed by the generated active group. In addition, the ions may be attracted to the workpiece W by a second high-frequency bias voltage of the second high-frequency power supply 64 as needed.

Hereinafter, the measuring device used in the method MT will be described. Fig. 6 is a perspective view illustrating a measuring device. The measuring instrument 100 shown in FIG. 6 includes a base substrate 102. The base substrate 102 is formed of, for example, silicon, and has the same shape as the shape of the object to be processed W, that is, a slightly disc shape. The diameter of the base substrate 102 is the same diameter as the workpiece W, and is 300 mm, for example. The shape and size of the measuring instrument 100 are limited by the shape and size of the workpiece W. Therefore, the measuring device 100 has the same shape as that of the workpiece W, and has the same size as that of the workpiece W. A notch 102N (or other mark) is formed on the edge of the base substrate 102.

The base substrate 102 includes a lower portion 102a and an upper portion 102b. The lower portion 102a is located at a portion closer to the electrostatic clamp ESC than the upper portion 102b when the measuring instrument 100 is disposed above the electrostatic clamp ESC. The lower portion 102a of the base substrate 102 is provided with a plurality of sensing portions 104A to 104H for measuring capacitance. In addition, the number of the sensing portions provided in the measuring device 100 may be any number of three or more. The plurality of sensing portions 104A to 104H are arranged along the edge of the base substrate 102, for example, at regular intervals throughout the edge. Specifically, each of the front-side end surfaces 104f of the plurality of sensing portions 104A to 104H is provided along the edge of the lower side portion 102a of the base substrate 102. In addition, among the plurality of sensing sections 104A to 104H, the sensing sections 104A to 104C can be observed in FIG. 6.

A recessed portion 102r is provided on the upper portion 102b of the base substrate 102. The recessed portion 102r includes a central region 102c and a plurality of radiation regions 102h. The central region 102c is a region that intersects the central axis AX100. The central axis AX100 is an axis that passes through the center of the base substrate 102 in the thickness direction. The central region 102c is provided with a circuit board 106. The plurality of radiation regions 102h extend from the center region 102c in the radiation direction with respect to the center axis AX100 and over the region where the plurality of sensing portions 104A to 104H are arranged. The plurality of radiation regions 102h are provided with wiring groups 108A to 108H for electrically connecting the plurality of sensing portions 104A to 104H and the circuit board 106, respectively. In addition, the plurality of sensing portions 104A to 104H may be provided on the upper portion 102 b of the base substrate 102.

Hereinafter, the sensing section will be described in detail. FIG. 7 is a perspective view showing an example of the sensing portion. FIG. 8 is a cross-sectional view taken along the line VIII-VIII in FIG. 7, and the base substrate and the focus ring of the measuring device are displayed together with the sensing portion. FIG. 9 is a cross-sectional view taken along the line IX-IX of FIG. 8. Figure 7 ~ Figure 9 The illustrated sensing section 104 is a sensing section used as a plurality of sensing sections 104A to 104H of the measuring device 100, and is configured as a wafer-shaped member in one example. In the following description, reference will be made to the XYZ rectangular coordinate system as appropriate. The X direction indicates the front direction of the sensing portion 104, the Y direction indicates a direction orthogonal to the X direction, and the width direction of the sensing portion 104 is displayed, the Z direction indicates a direction orthogonal to the Y direction, and the upper portion of the sensing portion 104 is displayed. direction.

As shown in FIG. 7 to FIG. 9, the sensing unit 104 includes a front end surface 104f, an upper surface 104t, a lower surface 104b, a pair of side surfaces 104s, and a rear end surface 104r. The front-side end surface 104f constitutes a front-side surface of the sensing portion 104 in the X direction. The sensing unit 104 is mounted on the base substrate 102 of the measuring instrument 100 such that the front end surface 104f faces the radiation direction with respect to the center axis AX100 (see FIG. 6). In addition, in a state where the sensing portion 104 is mounted on the base substrate 102, the front side surface 104 f is extended along the edge of the base substrate 102. Therefore, when the measuring instrument 100 is disposed on the electrostatic clamp ESC, the front end surface 104f faces the inner edge of the focus ring FR.

The rear-side end surface 104r constitutes the rear-side surface of the sensing portion 104 in the X direction. In a state where the sensing portion 104 is mounted on the base substrate 102, the rear end surface 104r is located closer to the center axis AX100 than the front end surface 104f. The upper surface 104t forms the upper side surface of the sensing portion 104 in the Z direction, and the lower surface 104b forms the lower side surface of the sensing portion 104 in the Z direction. The pair of side surfaces 104s constitute the surface of the sensing portion 104 in the Y direction.

The sensing unit 104 includes an electrode 143. The sensing unit 104 may further include an electrode 141 and an electrode 142. The electrode 141 is formed of a conductor. The electrode 141 includes a first portion 141a. As shown in FIGS. 7 and 8, the first portion 141 a extends in the X direction and the Y direction.

The electrode 142 is formed of a conductor. The electrode 142 has a second portion 142a. The second portion 142a extends from the first portion 141a. In the sensing portion 104, the electrode 142 is insulated from the electrode 141. As shown in FIGS. 7 and 8, the second portion 142 a extends in the X direction and the Y direction on the first portion 141 a.

The electrode 143 is an induction electrode formed by a conductor. The electrode 143 is provided on the first portion 141a of the electrode 141 and the second portion 142a of the electrode 142. The electrode 143 is insulated from the electrode 141 and the electrode 142 in the induction portion 104. The electrode 143 has a front surface 143f. The front face 143f extends in a direction where the first portion 141a and the second portion 142a cross. The front surface 143f extends along the front end side surface 104f of the sensing portion 104. In one embodiment, the front surface 143f constitutes a part of the front end side surface 104f of the sensing portion 104. Alternatively, the sensing portion 104 may have a cover on the front side of the front surface 143f of the electrode 143. The front surface 143f is covered with an insulating film.

As shown in FIG. 7 to FIG. 9, the electrode 141 and the electrode 142 may be opened on the area side (X direction) where the front surface 143f of the electrode 143 is arranged, and extended so as to surround the periphery of the electrode 143. That is, the electrode 141 and the electrode 142 may be extended on the upper surface, the rear surface, and the side surface of the electrode 143 so as to surround the electrode 143.

The front end surface 104f of the sensing portion 104 may be a curved surface having a predetermined curvature. In this case, the front end surface 104f may have a fixed curvature at any position on the front end surface. The curvature of the front end surface 104f may be the inverse of the distance between the center axis AX100 of the measuring device 100 and the front end surface 104f. The sensing portion 104 is mounted on the base substrate 102 such that the center of curvature of the front end surface 104f is aligned with the center axis AX100.

The sensing unit 104 may further include a substrate portion 144, insulating regions 146 to 148, spacer portions 151 to 153, and through-hole wiring 154. The substrate portion 144 includes a main body portion 144m and a surface layer portion 144f. The main body portion 144m is formed of, for example, silicon. The surface layer portion 144f covers the surface of the body portion 144m. The surface layer portion 144f is formed of an insulating material. The surface layer portion 144f is, for example, a thermal oxide film of silicon.

The second portion 142 a of the electrode 142 extends below the substrate portion 144, and an insulating region 146 is provided between the substrate portion 144 and the electrode 142. The insulating region 146 is formed of, for example, SiO ₂ , SiN, Al ₂ O _3, or polyimide.

The first portion 141a of the electrode 141 extends below the substrate portion 144 and the second portion 142a of the electrode 142. An insulating region 147 is provided between the electrode 141 and the electrode 142. The insulating region 147 is formed of, for example, SiO ₂ , SiN, Al ₂ O _3, or polyimide.

The insulating region 148 constitutes the upper surface 104 t of the sensing portion 104. The insulating region 148 is formed of, for example, SiO ₂ , SiN, Al ₂ O _3, or polyimide. The insulating region 148 is formed with spacer portions 151 to 153. The pad portion 153 is formed of a conductor and is connected to the electrode 143. Specifically, the electrode 143 and the spacer portion 153 are connected to each other by a through-hole wiring 154 that passes through the insulating region 146, the electrode 142, the insulating region 147, and the electrode 141. An insulator is provided around the through-hole wiring 154, and the through-hole wiring 154 is insulated from the electrode 141 and the electrode 142. The pad portion 153 is connected to the circuit substrate 106 through the through-hole wiring 123 provided in the base substrate 102 and the wiring 183 provided in the radiation region 102h of the recessed portion 102r. The shim portion 151 and the shim portion 152 are similarly formed of a conductor. The pad portion 151 and the pad portion 152 are respectively connected to the electrode 141 and the electrode 142 through corresponding through-hole wirings. In addition, the pad portion 151 and the pad portion 152 are connected to the circuit board 106 through corresponding through-hole wirings provided in the base substrate 102 and corresponding wirings provided in the radiation regions 102h of the recesses 102r.

The configuration of the circuit board 106 will be described below. FIG. 10 is a diagram illustrating a configuration of a circuit board of the measuring device. As shown in FIG. 10, the circuit board 106 includes a high-frequency oscillator 161, a plurality of C / V conversion circuits 162A to 162H, an A / D converter 163, a processor 164, a memory device 165, a communication device 166, and a power source 167.

Each of the plurality of sensing units 104A to 104H is connected to the circuit board 106 through a corresponding wiring group of the plurality of wiring groups 108A to 108H. In addition, each of the plurality of sensing units 104A to 104H is connected to a corresponding C / V conversion circuit of the plurality of C / V conversion circuits 162A to 162H through a plurality of wirings included in the corresponding wiring group. In the following, a single sensing unit 104 having the same configuration as each of the multiple sensing units 104A to 104H, a wiring group 108 having the same configuration as each of the multiple wiring groups 108A to 108H, and the same configuration as each of the multiple C / V conversion circuits 162A to 162H A C / V conversion circuit 162 will be described.

The wiring group 108 includes wirings 181 to 183. One end of the wiring 181 is connected to the pad portion 151 to which the electrode 141 is connected. This wiring 181 is connected to the ground potential line GL connected to the ground GC of the circuit board 106. In addition, the wiring 181 may be connected to the ground potential line GL through a switch SWG. One end of the wiring 182 is connected to the pad portion 152 to which the electrode 142 is connected, and the other end of the wiring 182 is connected to the C / V conversion circuit 162. One end of the wiring 183 is connected to the pad portion 153 connected to the electrode 143, and the other end of the wiring 183 is connected to the C / V conversion circuit 162.

The high-frequency oscillator 161 is connected to a power source 167 called a battery, and is configured to receive power from the power source 167 and generate a high-frequency signal. In addition, the power supply 167 is also connected to the processor 164, the memory device 165, and the communication device 166. The high-frequency oscillator 161 has a plurality of output lines. The high-frequency oscillator 161 transmits the generated high-frequency signals to the wiring 182 and the wiring 183 through a plurality of output lines. Therefore, the high-frequency oscillator 161 is electrically connected to the electrode 142 and the electrode 143 of the sensing portion 104, and the high-frequency signal from the high-frequency oscillator 161 is transmitted to the electrode 142 and the electrode 143.

The input of the C / V conversion circuit 162 is connected to a wiring 182 and a wiring 183. That is, the input of the C / V conversion circuit 162 is connected to the electrode 142 and the electrode 143 of the induction section 104. The C / V conversion circuit 162 is configured to generate a voltage signal representing the electrostatic capacitance of the electrode (electrode 143) connected to the input from the voltage amplitude of the input, and output the voltage signal. In addition, the larger the electrostatic capacitance of the electrode connected to the C / V conversion circuit 162 is, the larger the voltage of the voltage signal output by the C / V conversion circuit 162 is.

The input of the A / D converter 162 is connected to the outputs of the complex C / V conversion circuits 162A to 162H. The A / D converter 162 is connected to the processor 164. The A / D converter 163 is controlled by a control signal from the processor 164 to convert the output signals (voltage signals) of the complex C / V conversion circuits 162A to 162H into digital values. That is, the A / D converter 162 generates a digital value indicating the electrostatic capacitance of the electrode 143, and outputs the digital value to the processor 164.

The processor 164 is connected to a memory device 165. The memory device 165 is a memory device called a volatile memory, and is configured to memorize measurement data described later. The processor 164 is connected to another memory device 168. The memory device 168 is a memory device called a non-volatile memory, and stores a program executed by being read by the processor 164. In addition, the storage device 168 may store parameters described later.

The communication device 166 is a communication device that conforms to any wireless communication standard. For example, the communication device 166 may conform to Bluetooth (registered trademark). The communication device 166 is configured to wirelessly transmit measurement data stored in the memory device 165.

The processor 164 is configured to control each part of the measuring instrument 100 in the method MT by executing the above-mentioned program. For example, the processor 164 controls the power supply 167 to supply high-frequency signals to the electrodes 142 and 143, the power supply 167 to supply power to the memory device 165, the power supply 167 to supply power to the communication device 166, and the like. Further, the processor 164 executes the program to implement the acquisition of the digital value in the method MT, the storage of the measurement data in the memory device 165, and the transmission of the measurement data.

In the measuring device 100, the sensing portions 104A to 104H are arranged along the edge of the base substrate 102. Therefore, when the measuring device 100 is disposed on the electrostatic fixture ESC, a digital value indicating the electrostatic capacitance between the focus ring FR and each of the sensing portions 104A to 104H can be obtained. The capacitance C is expressed by C = ε S / d. The conductivity of the medium between the front face 143f of the ε series electrode 143 and the inner edge of the focusing ring FR, the area of the front face 143f of the S series electrode 143, and d can be regarded as the distance between the front face 143f of the electrode 143 and the inner edge of the focusing ring FR. Therefore, the larger the distance between the front face 143f of the electrode 143 and the inner edge of the focus ring FR obtained by the measuring device 100, the smaller the distance.

As described above, in the induction unit 104 mounted on the measuring instrument 100, an electrode 143 (induction electrode) is provided on the electrode 141, and a second portion of the electrode 142 is interposed between the electrode 141 and the electrode 143. When the sensing unit 104 is used, the switch SWG is turned off, the potential of the electrode 141 is set to the ground potential, and a high-frequency signal is supplied to the electrode 142 and the electrode 143. At this time, the voltage amplitude of the electrode 143 will not be affected by the direction in which the electrode 141 is provided with respect to the electrode 143, that is, the electrostatic capacitance below the sensing portion 104, and will reflect a specific direction, that is, toward the electrode 143 Front 143f The voltage amplitude of the electrostatic capacitance in the direction (X direction). Therefore, the electrostatic capacity can be measured with high directivity in a specific direction by the induction unit 104. In addition, when the switch SWG is turned on when the sensing section 104 is used, the C / V conversion circuit 162 outputs a voltage signal having a voltage corresponding to the combined capacitance of the electrostatic capacitance of the electrode 143 and the electrostatic capacitance of the electrode 142.

The electrodes 141 and 142 are opened on the side (X direction) of the area where the front surface of the electrode 143 is arranged, and are extended so as to surround the periphery of the electrode 143. Therefore, the electrode 143 is shielded by the electrode 141 and the electrode 142 in a direction other than the specific direction. Therefore, the directivity of the sensing portion 104 with respect to a specific direction can be further improved in the measurement of the electrostatic capacitance.

In addition, the front end surface 104f of the sensing portion 104 is configured as a curved surface having a predetermined curvature, and the front surface 143f of the electrode 143 extends along the front end surface 104f. Therefore, the radial distance between each position of the front surface 143f of the electrode 143 and the inner edge of the focus ring FR can be set to be approximately equal. Therefore, the measurement accuracy of electrostatic capacitance can be further improved.

Hereinafter, the method MT will be described in detail with reference to FIG. 1 again. In the following description, FIGS. 1 and 11 will be referred to together. FIG. 11 is a timing diagram related to the method shown in FIG. 1. As shown in FIG. 1, the method MT first executes step ST1. In step ST1, the power supply 167 of the measuring instrument 100 is set to ON. Then, the processor 164 starts to execute the program stored in the memory device 168. In the next step ST2, the measuring instrument 100 is stored in the slot of any of the containers 4a to 4d.

The next step ST3 is to input parameters to the measuring device 100. The parameters can be wirelessly transmitted from the control unit MC to the measuring device 100. The measuring device 100 stores the received parameters in the memory device 168. The parameter system includes the time length TA of the first monitoring period, time interval IA, the first sampling period, the time length TM of the measurement period, the second sampling period, the time length TB of the second monitoring period, the time interval IB, and the third sampling. Period, first threshold Th1, and second threshold Th2. In addition, the time length TA, the time interval IA, and the first sampling period may be common to the time length TB, the time interval IB, and the third sampling period, respectively. In this case, the parameter does not include the time length TB, the time interval IB, and the third sampling period. After that, the method MT processes them in parallel. The two processing flows depicted between the two double lines in FIG. 1 are processing flows executed in parallel.

Step ST4, which is subsequent to step ST3, conveys the measuring device 100 to the positioner AN by the conveying device TU1 under the control of the control unit MC. Then, under the control of the control unit MC, the positioner AN performs position adjustment, that is, position correction of the measuring device 100 in the same manner as the position adjustment of the workpiece W described above.

The next step ST5 is to transfer the measuring device 100 to the mounting table PD so as to surround the area surrounded by the focus ring FR. Specifically, under the control of the control unit MC, the measuring device 100 is transferred from the positioner AN to the load interlocking module LL1 and the load interlocking module LL2 by the transfer device TU1. Lock module. Then, the transfer device TU2 is used to transfer one of the load interlocking modules into the chamber of one of the program modules PM1 to PM6. In the chamber, the measuring device 100 is arranged on the mounting table PD in an area surrounded by the focusing ring FR. In addition, the transfer position (position on the mounting table PD) of the measuring device 100 using the transfer device TU2 is specified by preset coordinate information. After that, the gate valve between the one program module and the transfer module TF is closed.

Step ST6 following step ST5 is to carry out the measuring instrument 100 from the chamber. Specifically, under the control of the control unit MC, the gate valve between the above-mentioned one program module and the transfer module TF is opened, and then the measuring device 100 is taken out of the chamber by the transfer device TU2 and transferred To the load interlocking module of one of the load interlocking module LL1 and the load interlocking module LL2. In the next step ST7, the measuring instrument 100 is accommodated in a slot of one of the containers 4a to 4d. Specifically, under the control of the control unit MC, the measuring device 100 will be transferred from one loading module to the slot of one container by the transfer device TU1.

On the other hand, after step ST3, in step ST11, the processor 164 of the measuring device 100 acquires one or more first data sets. This step ST11 is performed during the first monitoring period of the time period TA. The time period TA is not limited, and is, for example, 1 second. Each of the one or more first data sets obtained in step ST11 can be obtained by the processor 164 using a first sampling cycle to indicate the corresponding one of the one or more of the plurality of sensing sections included in the plurality of sensing sections 104A to 104H. The digital value of the electrostatic capacitance of the electrode 143 is obtained. The first sampling period is not limited, and is, for example, 0.1 second. In addition, the sensing portion used in step ST11 may be all of the plurality of sensing portions 104A to 104H, or may be one or more sensing portions specified by the above parameters.

In the following step ST12, the processor 164 determines whether the average value of the plural digit values included in each of the one or more first data sets obtained in step ST11 is equal to or greater than the first threshold Th1. In addition, when the measuring device 100 is disposed in a region surrounded by the focus ring FR, the electrostatic capacitance of the electrode 143 of the one or more of the above-mentioned sensing portions becomes large. Therefore, by comparing the first threshold value Th1 with the average value of the plurality of digit values included in each of the one or more data groups, it can be determined whether the measuring device 100 is disposed in the area surrounded by the focus ring FR. When the processor 164 judges that the average value in step ST12 is not more than the first threshold Th1, it will determine in the following step ST13 whether there is a difference from the end of step ST11. Elapsed time interval IA. The time interval IA is not limited, and is, for example, 29 seconds. When the time interval IA has not elapsed from the end of the step ST11, the processor 164 performs the determination of the step ST13 again. On the other hand, when the time interval IA has elapsed from the end of the step ST11, the processor 164 again obtains one or more first data sets in the step ST11. In addition, the processor 164 may stop supplying power from the power source 167 to the high-frequency oscillator 161 during the time interval IA.

When the processor 164 determines in step ST12 that the average value is equal to or greater than the first threshold Th1, the processor 164 shifts to processing in step ST14. In addition, in step ST12, the first threshold value Th1 may be compared with one or more of the plurality of digit values included in each of the first data sets instead of the average value.

In step ST14, the processor 164 obtains a plurality of second data sets. This step ST14 is performed during the measurement period of the time length TM. The time period TM is not limited, and is, for example, 1 second. Each of the plurality of second data sets obtained in step ST14 includes a digital value indicating the electrostatic capacitance of the electrode 143 of the corresponding induction section 104A to 104H in the second sampling period during the measurement period. The complex digital value obtained. The second sampling period is not limited, and is, for example, 0.1 second.

In the next step ST15, the processor stores the measurement data in the storage device 165. The measurement data may be a plurality of second data sets. Alternatively, the measurement data may be a complex mean value obtained by averaging the complex digit values included in each complex second data set.

In the subsequent step ST16, the processor 164 obtains one or more third data sets. This step ST16 is performed during the second monitoring period of the time length TB. The time length TB of the second monitoring period may be the same as the time length TA as described above. Each of the one or more third data sets obtained in step ST16 can acquire the static electricity of the electrode 143 corresponding to one of the one or more sensing sections included in the plurality of sensing sections 104A to 104H by the third sampling cycle. The digital value of the capacitor is obtained. In addition, the sensing portion used in step ST16 may be all of the plurality of sensing portions 104A to 104H, or may be one or more sensing portions specified in the above parameters. The third sampling period may be common to the first sampling period.

In the next step ST17, the processor 164 determines whether the average value of the plural digit values included in each of the one or more third data sets obtained in step ST16 is equal to or greater than the second threshold Th2. In addition, when the measuring device 100 is stored in the slot of any one of the containers 4a to 4d, the electrostatic capacitance of the electrode 143 of the one or more of the above-mentioned sensing portions becomes large. Therefore, by comparing the second threshold value Th2 with the average value of the plural digital values included in each of the one or more data sets, it can be determined whether the measuring device 100 is stored in the slot of any of the containers 4a to 4d. When the measuring device 100 is stored in a container slot The electrostatic capacitance of the electrode 143 is smaller than the electrostatic capacitance of the electrode 143 when the measuring device 100 is disposed in the area surrounded by the focus ring FR. Therefore, the second threshold value Th2 is a value smaller than the first threshold value Th1.

When the processor 164 determines that the average value in step ST17 is not equal to or greater than the second threshold value Th2, it determines in the subsequent step ST18 whether there is an elapsed time interval IB from the end of step ST16. When the time interval IB has not elapsed from the end of the step ST16, the processor 164 performs the determination of the step ST18 again. On the other hand, when the time interval IB has elapsed from the end of the step ST16, the processor 164 again obtains one or more third data sets in the step ST16. In addition, the processor 164 may stop supplying power from the power source 167 to the high-frequency oscillator 161 in the time interval IB. The time interval between the second monitoring period and the next second monitoring period may be not the time interval IB but the time interval IA.

When the processor 164 determines that the average value is equal to or greater than the second threshold value Th2 in step ST17, the process proceeds to step ST19. In addition, in step ST17, the second threshold value Th2 may be compared with one or more of the plural digit values included in each of the third data sets instead of the average value.

In step ST19, the processor 164 wirelessly transmits the measurement data stored in the memory device 165 to a receiving unit connected to the control unit MC. When the control unit MC receives the measurement data, the control unit MC corrects the coordinate information of the transfer position of the transfer device TU2 in step ST8. Specifically, it is the focus ring FR specified by the measurement data and the edge of the measuring instrument 100. The gap between the gaps in the surrounding direction is reduced in such a way that the coordinate information is corrected. When this step ST19 is completed, the method MT is ended.

As described above, in the method MT, a measuring instrument 100 having a plurality of electrodes 143 (induction electrodes) arranged along the edge of the disc-shaped base substrate 102 is used to obtain the reflection of the inner edge of the focusing ring FR and the edge of the measuring instrument 100. The measurement data of the distribution of the interval in the surrounding direction. In addition, the digital value indicating the electrostatic capacitance of each of the plurality of electrodes 143 becomes larger when the measurement ring 100 is provided in the area surrounded by the focus ring FR. In the method MT, the measurement data is not always obtained, but one or more first data sets are obtained at a time interval IA in a period before the measurement period. Then, when one or more of the plurality of digit values included in each of the first data sets or the average value of the plurality of digit values included in each of the first data sets is above the first threshold Th1, the measurement period The second data set is acquired during the measurement, and then the measurement data is memorized. As described above, in the method MT, the measurement device 100 is intermittently operated in a period before the measurement period, so the power consumption of the power supply 167 of the measurement device 100 is suppressed.

In addition, in response to that the average value of one or more of the plurality of digit values included in each of the third data group or the one or more of the plurality of digit values included in the third data group is equal to or greater than the second threshold Th2, the processor 100 is By wirelessly transmitting the measurement data to the communication device 166, the measurement data can be wirelessly and autonomously transmitted outside the chamber of the program module. Therefore, since the intermittent operation is performed on the measuring instrument 100 even after the measurement period, the power consumption of the power source 167 of the measuring instrument 100 can be further suppressed.

In the following, other examples that can be mounted on the sensing section of the measuring device 100 will be described. FIG. 12 is a longitudinal sectional view showing another example of the sensing portion. The sensing portion 104A shown in FIG. 12 is a modification of the sensing portion 104 and differs from the sensing portion 104 in that the sensing portion 104A has a substrate portion 144A instead of the substrate portion 144. The substrate portion 144A is formed of an insulating material. For example, the substrate portion 144A is formed of borosilicate glass. The substrate portion 144A may be formed of silicon nitride.

The substrate portion 144A is a polyhedron and has a surface including a front surface 144a and a lower surface 144b. In one example, the surface of the substrate portion 144A further includes an upper surface 144c, a rear surface 144d, and a pair of side surfaces. The lower surface 144b and the upper surface 144c will extend in the X direction and the Y direction, and will face each other. The front surface 144a constitutes the front end surface of the substrate portion 144A in the X direction, and extends in a direction intersecting the lower surface 144b. The front face 144a may have a predetermined curvature. This curvature is the inverse of the distance between the central axis AX100 and the front surface 144a when the sensing portion 104A is mounted on the base substrate 102. The rear surface 144d constitutes the rear end surface of the substrate portion 144A in the X direction and faces the front surface 144a. In addition, a pair of side surfaces extend between one edge portion of the front surface 144a in the Y direction and one edge portion of the rear surface 144d in the Y direction, and the other edge portion of the front surface 144a in the Y direction and the rear surface 144d in the Y direction. Between the other edges.

The electrode 143 extends along the front surface 144a and the upper surface 144c of the substrate portion 144A. The insulating region 146 extends so as to cover the lower surface 144b, the upper surface 144c, the rear surface 144d, and a pair of side surfaces of the substrate portion 144A, and the electrodes 143 extending on the upper surface 144c. The electrode 142 is provided to cover the insulating region 146. The second portion 142a of the electrode 142 extends through the insulating region 146 along the lower surface 144b of the substrate portion 144A. The insulating region 147 is extended so as to cover the electrode 142. The electrode 141 is provided so as to cover the insulating region 147. In addition, the first portion 141a of the electrode 141 extends below the second portion 142a of the electrode 142 through the insulating region 147.

When the body portion 144m of the substrate portion 144 of the sensing portion 104 is formed of silicon, the sensing portion 104 has an internal electrostatic capacitance. For this internal electrostatic capacitance, high frequency oscillations are generated The output of the controller 161 is set to the need of a larger output. On the other hand, since the substrate portion 144A is formed of an insulating material in the induction portion 104A, the internal electrostatic capacitance is extremely small. Therefore, in the measuring device 100 having the sensing portion 104A, the output of the high-frequency oscillator 161 can be made small.

In addition, since the measuring device 100 can be used in a temperature range including a high temperature (for example, 20 ° C. to 80 ° C.) and a reduced pressure environment (for example, 1 Torr (133.3 Pa) or less), it is necessary to suppress the generation of gas from the substrate portion 144A. Therefore, the substrate portion 144A can be formed of borosilicate glass, silicon nitride, quartz, or aluminum oxide. With the substrate portion 144A in this manner, gas generation can be suppressed.

In addition, since the measuring device 100 can be used in a temperature range including a high temperature (for example, 20 ° C. to 80 ° C.), the substrate portion 144A preferably has a linear expansion coefficient that is close to a linear expansion coefficient of a constituent material of the base substrate 102. Therefore, when the base substrate 102 is formed of silicon, the substrate portion 144A can be formed of, for example, borosilicate glass or silicon nitride. Thus, the linear expansion coefficient of the substrate portion 144A is close to the linear expansion coefficient of the base substrate 102. Accordingly, it is possible to suppress damage to the induction portion 104A caused by the difference between the linear expansion coefficient of the substrate portion 144A and the linear expansion coefficient of the base substrate 102, and peeling of the induction portion 104A from the base substrate 102.

The weight of the measuring device 100 is preferably smaller. Therefore, the density (mass per unit volume) of the substrate portion 144A is preferably close to the density of the base substrate 102 or smaller than the density of the base substrate 102. Therefore, when the base substrate 102 is formed of silicon, the substrate portion 144A can be formed of, for example, borosilicate glass.

In the following, another example can be described for the sensing part that can be mounted on the measuring instrument 100. FIG. 13 is a longitudinal sectional view showing still another example of the sensing portion. FIG. 13 is a vertical cross-sectional view showing the sensing section 204, and a focusing ring FR is displayed together with the sensing section 204.

The sensing unit 204 includes an electrode 241, an electrode 242, and an electrode 243. The sensing portion 204 may further include a substrate portion 244 and an insulating region 247. The substrate portion 244 includes a main body portion 244m and a surface layer portion 244f. The main body portion 244m is formed of, for example, silicon. The surface layer portion 244f covers the surface of the main body portion 244m. The surface layer portion 244f is formed of an insulating material. The surface layer portion 244f is, for example, a thermal oxide film of silicon.

The substrate portion 244 has an upper surface 244a, a lower surface 244b, and a front end side surface 244c. The electrode 242 is disposed below the lower surface 244 b of the substrate portion 244 and extends in the X direction and the Y direction. In addition, the electrode 241 is disposed below the electrode 242 through the insulating region 247 and extends in the X direction and the Y direction.

The front end surface 244c of the substrate portion 244 is formed in a ladder shape. The lower side portion 244d of the front side end surface 244c protrudes toward the focus ring FR side than the upper side portion 244u of the front side end surface 244c. Electrode 243 It will extend along the upper part 244u of the front side surface 244c.

When this sensing section 204 is used as the sensing section of the measuring device 100, the electrode 241 is connected to the wiring 181, the electrode 242 is connected to the wiring 182, and the electrode 243 is connected to the wiring 183.

In the sensing portion 204, the electrode 243, which is a sensing electrode, is shielded from below the sensing portion 204 by the electrodes 241 and 242. Therefore, through the sensing portion 204, the electrostatic capacitance can be measured with a high directivity toward a specific direction, that is, the direction (X direction) of the front surface 243f of the electrode 243.

In the following, a measuring device according to another embodiment will be described. FIG. 14 is a diagram illustrating a circuit board configuration of a measuring device according to another embodiment. The measuring device 100A shown in FIG. 14 further includes an acceleration sensor 171, a temperature sensor 172, a humidity sensor 173, and a pressure sensor 174 except for the same components as those of the measuring device 100. The acceleration sensor 171, the temperature sensor 172, the humidity sensor 173, and the pressure sensor 174 are connected to the processor 164. The acceleration sensor 171 outputs acceleration data representing the measured acceleration of the measuring device 100A to the processor 164. The temperature sensor 172 outputs temperature data indicating the measured temperature around the measuring instrument 100A to the processor 164. The humidity sensor 173 outputs to the processor 164 humidity data indicating the humidity around the measured measuring instrument 100A. The pressure sensor 174 outputs pressure data indicating the measured pressure around the measuring device 100A to the processor 164.

The processor 164 performs abnormality detection processing based on acceleration data, temperature data, humidity data, and pressure data. The processor 164 compares the acceleration of the measuring device 100A and the acceleration threshold specified by the acceleration data. When the acceleration of the measuring device 100A is larger than the acceleration threshold, it determines that an abnormality occurs during the transportation of the measuring device 100A, and The first signal is wirelessly transmitted to the control unit MC. In addition, when the processor 164 judges from the acceleration of the measuring device 100A that abnormal vibration is generated in the measuring device 100A, it wirelessly transmits the second signal to the control unit MC. When the control unit MC receives the first signal and the second signal, it stops the transport of the measuring device 100A. In addition, the abnormality related to the first signal may also occur when the transfer device TU1 or the transfer device TU2 is in contact with another tool. In addition, an abnormality related to the second signal may cause a malfunction in the transfer device TU1 or the transfer device TU2.

In addition, the processor 164 wirelessly transmits the third signal to the control unit MC when the angle of the measuring device 100A specified by the acceleration data is larger than the angle threshold. The angle of the measuring instrument 100A is a scale indicating the level of the measuring instrument 100A. It is calculated based on the acceleration of the measuring instrument 100A. When the control unit MC receives the third signal, it performs control to recover the measuring device 100A toward any of the containers 4a to 4d. In addition, the abnormality related to the third signal may occur when a part of the measuring device 100A crosses the focus ring FR.

In addition, the processor 164 wirelessly transmits the fourth signal to the control unit MC when the temperature around the measuring device 100A specified by the temperature data is higher than the temperature threshold. When the control unit MC receives the fourth signal, it performs control for recovering the measuring instrument 100A. In addition, the abnormality related to the fourth signal is caused by the abnormality of the program module provided in the chamber with the measuring instrument 100A.

In addition, the processor 164 wirelessly transmits the fifth signal to the control unit MC when the humidity around the measuring device 100A specified by the humidity data is higher than the humidity threshold. When the control unit MC receives the 5th signal, the dehydration process is executed. The dehydration procedure can be achieved, for example, by venting. In addition, the abnormality related to the fifth signal may be caused by moisture absorption in the containers 4a to 4d, the loading module LM, the loading interlocking module LL1, or the loading interlocking module LL1.

In addition, the processor 164 wirelessly transmits the sixth signal to the control unit MC when the pressure around the measuring device 100A specified by the pressure data is higher than the pressure threshold. When the control unit MC receives the sixth signal, it performs control for exhaust gas treatment, flushing treatment, or recovery of the measuring instrument 100A. In addition, the abnormality related to the sixth signal may be caused by the precompression chamber for the interlocking module LL1, the precompression chamber for the interlocking module LL2, the decompression chamber for the transfer module, or the chamber for the program module. Caused by insufficient decompression. In addition, the abnormality related to the sixth signal may occur when the gas remains in the chamber of the program module.

In one embodiment, the method MT may further include the abnormality detection process. The abnormality detection processing can be performed in parallel with the two processing flows between the double lines shown in FIG. 1 after the execution of step ST3. In order to transmit the first to sixth signals in this abnormality detection process, the measurement device 100A and the control unit MC need to be in a wireless communication state. Therefore, each of the containers 4a to 4d, the loading module LM, the loading interlocking module LL1, the loading interlocking module LL2, and the transfer module TF may have a window region through which radio waves can pass. Alternatively, the individual internal space of each of the containers 4a to 4d, the transfer space of the loading module LM, the preliminary decompression chamber with the interlocking module LL1, the preliminary decompression chamber with the interlocking module LL2, and the transfer module TF The decompression chamber is connected to a window area through which radio waves can pass. The measuring device 100A is arranged in the individual internal spaces of the containers 4a to 4d, the transfer space of the loading module LM, the preliminary decompression chamber with the interlocking module LL1, the preliminary decompression chamber with the interlocking module LL2, and the transfer. Any one of the decompression chambers of the module TF can still wirelessly communicate with the control unit MC through the window area. Also, if you open the program module The gate valve between the transfer module TF and the measuring device 100A can wirelessly communicate with the control unit MC through the above window area even if it is arranged in the chamber of the program module.

In addition, in the abnormality detection process, at least one of the above-mentioned abnormalities may be detected. Therefore, the measuring device 100A only needs to have sensors required for detecting abnormalities among the acceleration sensor 171, the temperature sensor 172, the humidity sensor 173, and the pressure sensor 174.

Although various embodiments have been described above, various modifications are not limited to the above embodiments. For example, although the examples of the program modules PM1 to PM6 illustrate a plasma processing device, the program modules PM1 to PM6 may be any processing device as long as they are those using an electrostatic fixture and a focus ring. In addition, although the above-mentioned plasma processing apparatus 10 is a capacitive coupling type plasma processing apparatus, the plasma processing apparatus which can be used as the program modules PM1 to PM6 is an inductive coupling type plasma processing apparatus. Any plasma treatment device like a plasma treatment device for microwave surface waves.

ST1‧‧‧Power ON

ST2‧‧‧Store the measuring device in a container

ST3‧‧‧Input parameters

ST4‧‧‧ Calibration position

ST5‧‧‧ moved into the measuring device

ST6‧‧‧ Take out the measuring device

ST7‧‧‧Stored in a container

ST8‧‧‧Correct coordinate information

ST11‧‧‧ Obtained the first data set

ST12‧‧‧ Mean (or digital value) is above the 1st threshold?

ST13‧‧‧ End of the time interval?

ST14‧‧‧ Obtained 2nd data set

ST15‧‧‧Memory measurement data

ST16‧‧‧ Obtained 3rd data set

ST17‧‧‧ Mean (or digital value) is above the 2nd threshold?

ST18‧‧‧ End of time interval?

ST19‧‧‧Transfer measurement data

Claims (7)

A method is a method for obtaining data of an electrostatic capacitance between a measuring device and a focus ring which is transported into a chamber by a transporting device of the processing system; the processing system is provided with: a program module, which provides the chamber The chamber body of the chamber and a mounting table provided in the chamber and on which the measuring device is placed; the conveying device; and a control unit that controls the conveying device; the measuring device is provided with: a base substrate; It has a disc shape; a plurality of sensing portions are arranged along the edge of the base substrate; and a circuit substrate is mounted on the base substrate; each of the plurality of sensing portions has a sensing surface having a front surface extending along the edge of the base substrate. The circuit board has a high-frequency oscillator, which is a high-frequency oscillator that generates high-frequency signals, and is electrically connected to the sensing electrodes of each of the plurality of sensing portions; and a plurality of C / V conversion circuits, each of which Convert the voltage amplitude of the sensing electrode of the corresponding sensing part of the plurality of sensing parts into a voltage signal representing electrostatic capacitance; the A / D converter is to convert electricity from each of the plurality of C / Vs The output voltage signal is converted into a digital value; a processor is connected to the A / D converter; a memory device is connected to the processor; a communication device is used to wirelessly transmit data stored in the memory device; And a power supply for supplying power to the processor, the high-frequency oscillator, and the communication device; the method includes: the processor obtains more than one first data set at a preset time interval, one for each The above first data set includes a step of obtaining the digital value of the electrostatic capacitance of the corresponding sensing part of the one or more sensing parts included in the complex sensing part with the first sampling cycle, and obtaining the complex digital value ; A process of transporting the measuring device to the area surrounded by the focus ring by the transporting device; responding to one or more of the plurality of digit values included in each of the one or more first data sets The average value of the plurality of digit values included in the above first data group will become the first threshold or more, and the processor will obtain the plural second data group during the measurement period, and each of the plural second data groups includes A process of obtaining a complex digital value by obtaining a digital value representing an electrostatic capacitance of a corresponding sensing part of the complex sensing part with a second sampling period in the measurement period; the processor will memorize the measurement data in the A memory device, the measurement data includes a process of obtaining a complex average value by obtaining an average value of the plurality of digital data values contained in the plurality of second data sets or each of the plurality of second data sets; and A process for removing the measuring device from the chamber. For example, the method of applying for the first item of the patent scope further includes: after the measurement period is over, the processor will obtain more than one third data set at a preset time interval, each of which more than one The 3 data set includes a process of obtaining the digital value of the complex digital value by obtaining the digital value of the electrostatic capacitance of the corresponding sensing part among the one or more sensing parts included in the complex sensing part with the third sampling cycle; and responding; In the case where one or more of the plural digit values included in each of the one or more third data groups or the average of the plural digit values included in each of the one or more third data groups becomes the second threshold or more, The processor wirelessly transmits the measurement data to the communication device. For example, the method of applying for the first item of the patent scope is to stop the supply of electric power from the power source to the high level between the period during which the one or more first data sets are obtained and the period during which the one or more first data sets are subsequently obtained. Frequency oscillator. For example, the method of applying for the second item of the patent scope is to stop the supply of power from the power source to the high level between the period during which the one or more first data sets are obtained and the period during which the one or more first data sets are subsequently obtained. Frequency oscillator. For example, the method of any one of the scope of patent applications Nos. 1 to 4, it is to stop from the power supply between the period during which the one or more third data sets are acquired and the period during which the one or more third data sets are subsequently obtained. The electric power is supplied to the high-frequency oscillator. For example, the method in any one of claims 1 to 4 of the scope of patent application, wherein in the process of transferring the measuring device, the control unit is configured to transfer the measuring device to the preset coordinate information. Controlling the conveying device by means of sending position; further comprising: the control section corrects in a manner that reduces the gap in the peripheral direction between the focus ring and the edge of the measuring device specified from the measurement data The process of the coordinate information. For example, the method of claim 5 in the patent scope, wherein in the step of transferring the measuring device, the control unit controls the transferring device by transferring the measuring device to a transferring position specified by preset coordinate information. ; Further comprising: a process in which the control unit corrects the coordinate information in a manner that reduces a gap in a peripheral direction between the focus ring and the edge of the measuring device specified from the measurement data.