TW201806006A - 半導體元件及其製作方法 - Google Patents

半導體元件及其製作方法 Download PDF

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TW201806006A
TW201806006A TW105125383A TW105125383A TW201806006A TW 201806006 A TW201806006 A TW 201806006A TW 105125383 A TW105125383 A TW 105125383A TW 105125383 A TW105125383 A TW 105125383A TW 201806006 A TW201806006 A TW 201806006A
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TWI690984B (zh
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許智凱
傅思逸
洪裕祥
程偉麒
鄭志祥
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聯華電子股份有限公司
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Priority to US15/259,060 priority patent/US10008569B2/en
Publication of TW201806006A publication Critical patent/TW201806006A/zh
Priority to US15/983,077 priority patent/US10541304B2/en
Priority to US16/703,780 priority patent/US11189695B2/en
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Priority to US17/509,061 priority patent/US11948975B2/en
Priority to US18/587,981 priority patent/US20240194738A1/en

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Abstract

本發明揭露一種製作半導體元件的方法。首先提供一基底，然後形成一閘極結構於基底上，於閘極結構旁形成一凹槽，形成一緩衝層於凹槽內，接著再形成一磊晶層於緩衝層上。在本實施例中，緩衝層較佳包含一新月形狀。

Description

半導體元件及其製作方法
本發明是關於一種製作半導體元件的方法，尤指一種形成具有新月狀之緩衝層的方法。
為了能增加半導體結構的載子遷移率，可以選擇對於閘極通道施加壓縮應力或是伸張應力。舉例來說，若需要施加的是壓縮應力，習知技術常利用選擇性磊晶成長(selective epitaxial growth, SEG)技術於一矽基底內形成晶格排列與該矽基底相同之磊晶結構，例如矽鍺(silicon germanium, SiGe)磊晶結構。利用矽鍺磊晶結構之晶格常數(lattice constant)大於該矽基底晶格之特點，對P型金氧半導體電晶體的通道區產生應力，增加通道區的載子遷移率(carrier mobility)，並藉以增加金氧半導體電晶體的速度。反之，若是N型半導體電晶體則可選擇於矽基底內形成矽碳(silicon carbide, SiC)磊晶結構，對閘極通道區產生伸張應力。
現今以磊晶成長方式形成磊晶層的電晶體過程中通常會先於閘極結構兩側形成凹槽，再利用磊晶成長製程形成磊晶層於凹槽內。然而以磊晶成長方式所形成的磊晶層通常無法得到平整的表面輪廓並影響元件運作。因此，如何改良現有製程技術以解決現有瓶頸即為現今一重要課題。
本發明較佳實施例揭露一種製作半導體元件的方法。首先提供一基底，然後形成一閘極結構於基底上，於閘極結構旁形成一凹槽，形成一緩衝層於凹槽內，接著再形成一磊晶層於緩衝層上。在本實施例中，緩衝層較佳包含一新月形狀。
本發明另一實施例揭露一種半導體元件，其主要包含：一基底；一閘極結構設於基底上；一緩衝層設於閘極結構旁，該緩衝層包含一新月形狀；以及一磊晶層設於該衝層上。
請參照第1圖至第4圖，第1圖至第4圖為本發明較佳實施例製作一半導體元件之方法示意圖。如第1圖所示，首先提供一基底12，然後於基底上形成至少一閘極結構14、16。在本實施例中，形成閘極結構14、16的方式較佳依序形成一閘極介電層、一閘極材料層以及一硬遮罩於基底12上，並利用一圖案化光阻(圖未示)當作遮罩進行一圖案轉移製程，以單次蝕刻或逐次蝕刻步驟，去除部分硬遮罩、部分閘極材料層以及部分閘極介電層，然後剝除圖案化光阻，以於基底12上形成至少一由圖案化之閘極介電層18、圖案化之閘極材料層20以及圖案化之硬遮罩22所構成的閘極結構14、16。在本實施例中，閘極結構14、16的數量以兩顆為例，但不侷限於此，且為了凸顯後續於兩個閘極結構14、16之間所形成的緩衝層與磊晶層，本實施例僅顯示部分閘極結構14、16，例如僅顯示閘極結構14的右半部份與閘極結構16的左半部份。
在本實施例中，基底12例如是矽基底、磊晶矽基底、碳化矽基底或矽覆絕緣(silicon-on-insulator, SOI)基底等之半導體基底，但不以此為限。閘極介電層18可包含二氧化矽(SiO2 )、氮化矽(SiN)或高介電常數(high dielectric constant, high-k)材料；閘極材料層20可包含金屬材料、多晶矽或金屬矽化物(silicide)等導電材料；硬遮罩22可選自由氧化矽、氮化矽、碳化矽(SiC)以及氮氧化矽(SiON)所構成的群組，但不侷限於此。
此外，在一實施例中，還可選擇預先在基底12中形成複數個摻雜井(未繪示)或複數個作為電性隔離之用的淺溝渠隔離(shallow trench isolation, STI)。並且，本實施例雖以平面型電晶體為例，但在其他變化實施例中，本發明之半導體製程亦可應用於非平面電晶體，例如是鰭狀電晶體(Fin-FET)，此時，第1圖所標示之基底12即相對應代表為形成於一基底12上的鰭狀結構。
然後分別在閘極結構14、16側壁形成至少一側壁子24，並選擇性進行一輕摻雜離子佈植，利用約930℃溫度進行一快速升溫退火製程活化植入基底12的摻質，以於側壁子24兩側的基底12中分別形成一輕摻雜汲極26。在本實施例中，側壁子24可為單一側壁子或複合式側壁子，例如可細部包含一偏位側壁子(圖未示)以及一主側壁子(圖未示)，偏位側壁子與主側壁子較佳包含不同材料，且兩者均可選自由氧化矽、氮化矽、氮氧化矽以及氮碳化矽所構成的群組，但不侷限於此。
隨後進行一乾蝕刻及/或濕蝕刻製程，利用閘極結構14、16與側壁子24作為蝕刻遮罩，沿著側壁子24向下單次或多次蝕刻基底12，以於閘極結構14、16兩側的基底12中形成一凹槽28，並形成一緩衝層30於凹槽28內。
在本實施例中，形成緩衝層30的方式可先進行一沉積製程以形成一緩衝層30於閘極結構旁14、16的凹槽28內並同時進行一蝕刻製程去除部分緩衝層30，其中沉積製程較佳通入一含矽氣體，利用例如二氯矽甲烷(dichlorosilane, DCS)等氣體於凹槽28內成長出緩衝層30，之後的蝕刻製程則較佳通入含氯氣體，例如利用鹽酸(hydrochloric acid, HCl)來去除部分緩衝層30與緩衝層30中可能產生的差排缺陷。
值得注意的是，本發明較佳在通入上述氣體時將蝕刻製程所使用氣體(如二氯矽甲烷)與沉積製程所使用氣體(如鹽酸)之間的蝕刻沉積比(etch to deposition ratio)控制介於0.2至0.5或最佳約0.25，藉此避免所形成的緩衝層30頂部超過基底12表面並向上延伸成長出凹槽28至側壁子24側壁，且後續所形成的磊晶層上表面不致產生V型輪廓並可平整切齊基底12表面。依據本發明之較佳實施例，以此製程方式所形成的緩衝層30較佳具有一新月形狀，且新月形狀的兩個頂點較佳切齊基底12表面且不向上延伸至側壁子24側壁。
如第2圖所示，接著可重複進行前述之沉積與蝕刻製程，以於緩衝層30上形成一磊晶層32，其中磊晶層30中可具有摻質而形成一源極/汲極區域，且磊晶層32上表面較佳切齊基底12表面。然後可選擇性再形成一遮蓋層34於磊晶層32上。
在本實施例中，緩衝層30、磊晶層32以及遮蓋層34均較佳包含磷化矽(SiP)，其中磊晶層32的磷濃度較佳高於緩衝層30的磷濃度，而遮蓋層34的磷濃度則較佳低於磊晶層32的磷濃度。換句話說，磊晶層32的磷濃度較佳同時高於緩衝層30與遮蓋層34的磷濃度，但緩衝層30與遮蓋層34之間的磷濃度並無特別限制，例如緩衝層30的磷濃度可高於遮蓋層34的磷濃度，或遮蓋層34的磷濃度可高於緩衝層30的磷濃度，這些均屬本發明所涵蓋的範圍。
如第3圖所示，然後可選擇性形成一由氮化矽所構成的接觸洞蝕刻停止層(contact etch stop layer, CESL)36於基底12上並覆蓋閘極結構14、16與遮蓋層34，再形成一層間介電層38於CESL 36上。接著進行一平坦化製程，例如利用化學機械研磨(chemical mechanical polishing, CMP)去除部分層間介電層38、部分接觸洞蝕刻停止層36以及硬遮罩20並暴露出由多晶矽材料所構成的閘極材料層18，使閘極材料層18上表面與層間介電層38上表面齊平。
隨後進行一金屬閘極置換製程將閘極結構14、16轉換為金屬閘極。例如可先進行一選擇性之乾蝕刻或濕蝕刻製程，例如利用氨水(ammonium hydroxide, NH4 OH)或氫氧化四甲銨(Tetramethylammonium Hydroxide, TMAH)等蝕刻溶液來去除閘極結構14、16中的閘極材料層18，以於層間介電層38中形成凹槽(圖未示)。之後依序形成一高介電常數介電層40以及至少包含功函數金屬層42與低阻抗金屬層44的導電層於凹槽內，並再搭配進行一平坦化製程使U型高介電常數介電層40、U型功函數金屬層42與低阻抗金屬層44的表面與層間介電層38表面齊平。
在本實施例中，高介電常數介電層40包含介電常數大於4的介電材料，例如選自氧化鉿(hafnium oxide, HfO2 )、矽酸鉿氧化合物(hafnium silicon oxide, HfSiO4 )、矽酸鉿氮氧化合物(hafnium silicon oxynitride, HfSiON)、氧化鋁(aluminum oxide, Al2 O3 )、氧化鑭(lanthanum oxide, La2 O3 )、氧化鉭(tantalum oxide, Ta2 O5 )、氧化釔(yttrium oxide, Y2 O3 )、氧化鋯(zirconium oxide, ZrO2 )、鈦酸鍶（strontium titanate oxide, SrTiO3 ）、矽酸鋯氧化合物(zirconium silicon oxide, ZrSiO4 )、鋯酸鉿(hafnium zirconium oxide, HfZrO4 )、鍶鉍鉭氧化物(strontium bismuth tantalate, SrBi2 Ta2 O9 , SBT)、鋯鈦酸鉛(lead zirconate titanate, PbZrx Ti1-x O3 , PZT)、鈦酸鋇鍶(barium strontium titanate, Bax Sr1-x TiO3 , BST)、或其組合所組成之群組。
功函數金屬層42較佳用以調整形成金屬閘極之功函數，使其適用於N型電晶體(NMOS)或P型電晶體(PMOS)。若電晶體為N型電晶體，功函數金屬層42可選用功函數為3.9電子伏特(eV)～4.3 eV的金屬材料，如鋁化鈦(TiAl)、鋁化鋯(ZrAl)、鋁化鎢(WAl)、鋁化鉭(TaAl)、鋁化鉿(HfAl)或TiAlC (碳化鈦鋁)等，但不以此為限；若電晶體為P型電晶體，功函數金屬層42可選用功函數為4.8 eV～5.2 eV的金屬材料，如氮化鈦(TiN)、氮化鉭(TaN)或碳化鉭(TaC)等，但不以此為限。功函數金屬層42與低阻抗金屬層44之間可包含另一阻障層(圖未示)，其中阻障層的材料可包含鈦(Ti)、氮化鈦(TiN)、鉭(Ta)、氮化鉭(TaN)等材料。低阻抗金屬層44則可選自銅(Cu)、鋁(Al)、鎢(W)、鈦鋁合金(TiAl)、鈷鎢磷化物(cobalt tungsten phosphide，CoWP)等低電阻材料或其組合。由於依據金屬閘極置換製程將虛置閘極轉換為金屬閘極乃此領域者所熟知技藝，在此不另加贅述。接著可去除部分高介電常數介電層40、部分功函數金屬層42與部分低阻抗金屬層44形成凹槽(圖未示)，然後再填入一硬遮罩46於凹槽內並使硬遮罩46與層間介電層38表面齊平，其中硬遮罩46可選自由氧化矽、氮化矽、氮氧化矽以及氮碳化矽所構成的群組。
如第4圖所示，接著進行一接觸插塞製程搭配金屬矽化物製程形成一金屬矽化物54於遮蓋層34表面以及一接觸插塞48電連接閘極結構14、16兩側的磊晶層32或源極/汲極區域。在本實施例中，接觸插塞製程可利用圖案化遮罩進行一蝕刻製程，去除閘極結構14、16旁的部分層間介電層38以形成接觸洞(圖未示)暴露遮蓋層34表面。然後依序沉積一第一金屬層50與第二金屬層52於接觸洞中，其中第一金屬層50與第二金屬層52較佳共形地(conformally)形成於遮蓋層34表面及接觸洞的內側側壁。在本實施例中，第一金屬層50較佳選自鈦、鈷、鎳及鉑等所構成的群組，且最佳為鈦，第二金屬層52則較佳包含氮化鈦、氮化鉭等金屬化合物。
在連續沉積第一金屬層50與第二金屬層52之後，依序進行一第一熱處理製程與一第二熱處理製程以形成一金屬矽化物54於磊晶層32上。在本實施例中，第一熱處理製程包含一常溫退火(soak anneal)製程，其溫度較佳介於500℃至600℃，且最佳為550℃，而其處理時間則較佳介於10秒至60秒，且最佳為30秒。第二熱處理製程包含一峰值退火(spike anneal)製程，其溫度較佳介於600℃至950℃，且最佳為600℃，而其處理較佳時間則較佳介於100毫秒至5秒，且最佳為5秒。
迨進行兩次熱處理製程後，形成一第三金屬層56並填滿接觸洞。在本實施例中，第三金屬層56較佳包含鎢，但不侷限於此。最後進行一平坦化製程，例如以CMP製程部分去除第三金屬層56、部分第二金屬層52及部分第一金屬層50，甚至可視製程需求接著去除部分層間介電層38，以形成接觸插塞48電連接遮蓋層34與磊晶層32。至此即完成本發明較佳實施例一半導體元件的製作。
請再參照第4圖，其為本發明較佳實施例之一半導體元件之結構示意圖。如第4圖所示，半導體元件較佳包含至少一閘極結構14設於基底12上、一側壁子24設於閘極結構14旁、一緩衝層30設於側壁子24兩側的基底12中以及一磊晶層32設於緩衝層30上。
更具體而言，緩衝層30本身較佳呈現一新月形狀，其中新月形狀包含一第一寬度58以及一第二寬度60位於側壁子24正下方，且第二寬度60係大於第一寬度58。在本實施例中，第一寬度58較佳介於3奈米至7奈米或最佳約5奈米，第二寬度60則較佳介於該5奈米至9奈米或最佳約7奈米。從細部來看，呈新月形狀的緩衝層30具有一內圍弧線62以及一外圍弧線72，且內圍弧線62與外圍弧線72分別交錯並接觸於磊晶層32兩側之一頂點74上，且頂點74較佳與基底12表面切齊。
另外磊晶層32之底表面包含一弧線或上述緩衝層30之內圍弧線62，且緩衝層另包含一垂直厚度64設於弧線之一谷點66正下方。磊晶層32本身則又具有一較大之寬度68約略等於凹槽28沿著X方向之寬度大小以及另一寬度70略小於寬度68。在本實施例中，緩衝層30的垂直厚度64較佳介於7奈米至11奈米或最佳約9奈米，磊晶層32的寬度68較佳介於32奈米至35奈米或最佳約33.5奈米，寬度70則較佳介於28奈米至31奈米或最佳約29.5奈米。
請再參照第5圖，第5圖為本發明一實施例之一半導體元件之結構示意圖。如第5圖所示，相較於第4圖中緩衝層30的內圍弧線62與外圍弧線72分別交錯於磊晶層32兩側之頂點74，本實施例可選擇不交錯緩衝層30的內圍弧線62與外圍弧線72，而使內圍弧線62與外圍弧線72同時連接一頂面76，且頂面76與基底12表面切齊。 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。
12‧‧‧基底
14‧‧‧閘極結構
16‧‧‧閘極結構
18‧‧‧閘極介電層
20‧‧‧閘極材料層
22‧‧‧硬遮罩
24‧‧‧側壁子
26‧‧‧輕摻雜汲極
28‧‧‧凹槽
30‧‧‧緩衝層
32‧‧‧磊晶層
34‧‧‧遮蓋層
36‧‧‧接觸洞蝕刻停止層
38‧‧‧層間介電層
40‧‧‧高介電常數介電層
42‧‧‧功函數金屬層
44‧‧‧低阻抗金屬層
46‧‧‧硬遮罩
48‧‧‧接觸插塞
50‧‧‧第一金屬層
52‧‧‧第二金屬層
54‧‧‧金屬矽化物
56‧‧‧第三金屬層
58‧‧‧第一寬度
60‧‧‧第二寬度
62‧‧‧內圍弧線
64‧‧‧垂直厚度
66‧‧‧谷點
68‧‧‧寬度
70‧‧‧寬度
72‧‧‧外圍弧線
74‧‧‧頂點
76‧‧‧頂面
第1圖至第4圖為本發明較佳實施例製作一半導體元件之方法示意圖。 第5圖為本發明一實施例之一半導體元件之結構示意圖。
12‧‧‧基底
14‧‧‧閘極結構
16‧‧‧閘極結構
18‧‧‧閘極介電層
24‧‧‧側壁子
26‧‧‧輕摻雜汲極
30‧‧‧緩衝層
32‧‧‧磊晶層
34‧‧‧遮蓋層
36‧‧‧接觸洞蝕刻停止層
38‧‧‧層間介電層
40‧‧‧高介電常數介電層
42‧‧‧功函數金屬層
44‧‧‧低阻抗金屬層
46‧‧‧硬遮罩
48‧‧‧接觸插塞
50‧‧‧第一金屬層
52‧‧‧第二金屬層
54‧‧‧金屬矽化物
56‧‧‧第三金屬層
58‧‧‧第一寬度
60‧‧‧第二寬度
62‧‧‧內圍弧線
64‧‧‧垂直厚度
66‧‧‧谷點
68‧‧‧寬度
70‧‧‧寬度
72‧‧‧外圍弧線
74‧‧‧頂點

Claims (19)

  1. 一種製作半導體元件的方法，包含： 提供一基底； 形成一閘極結構於該基底上； 於該閘極結構旁形成一凹槽； 形成一緩衝層於該凹槽內，該緩衝層包含一新月形狀；以及 形成一磊晶層於該緩衝層上。
  2. 如申請專利範圍第1項所述之方法，另包含： 形成一側壁子於該閘極結構旁；以及 形成該凹槽於該側壁子旁。
  3. 如申請專利範圍第2項所述之方法，其中該緩衝層包含一第一寬度以及一第二寬度位於該側壁子正下方，且該第二寬度係大於該第一寬度。
  4. 如申請專利範圍第3項所述之方法，其中該第一寬度介於3奈米至7奈米。
  5. 如申請專利範圍第3項所述之方法，其中該第二寬度介於該5奈米至9奈米。
  6. 如申請專利範圍第1項所述之方法，其中該磊晶層之底表面包含一弧線。
  7. 如申請專利範圍第6項所述之方法，其中該緩衝層包含一垂直厚度設於該弧線之一谷點正下方。
  8. 如申請專利範圍第7項所述之方法，其中該垂直厚度介於7奈米至11奈米。
  9. 如申請專利範圍第1項所述之方法，其中該磊晶層之上表面切齊該基底之上表面。
  10. 如申請專利範圍第1項所述之方法，其中該緩衝層之蝕刻沉積比介於0.2至0.5。
  11. 一種半導體元件，包含： 一基底； 一閘極結構設於該基底上； 一緩衝層設於該閘極結構旁，該緩衝層包含一新月形狀；以及 一磊晶層設於該緩衝層上。
  12. 如申請專利範圍第11項所述之半導體元件，另包含： 一側壁子設於該閘極結構旁；以及 該緩衝層設於該側壁子旁。
  13. 如申請專利範圍第12項所述之半導體元件，其中該緩衝層包含一第一寬度以及一第二寬度位於該側壁子正下方，且該第二寬度係大於該第一寬度。
  14. 如申請專利範圍第13項所述之半導體元件，其中該第一寬度介於3奈米至7奈米。
  15. 如申請專利範圍第13項所述之半導體元件，其中該第二寬度介於該5奈米至9奈米。
  16. 如申請專利範圍第11項所述之半導體元件，其中該磊晶層之底表面包含一弧線。
  17. 如申請專利範圍第16項所述之半導體元件，其中該緩衝層包含一垂直厚度設於該弧線之一谷點正下方。
  18. 如申請專利範圍第17項所述之半導體元件，其中該垂直厚度介於7奈米至11奈米。
  19. 如申請專利範圍第11項所述之半導體元件，其中該磊晶層之上表面切齊該基底之上表面。
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