TW201803050A - Heat dissipation package structure - Google Patents

Abstract

Provided is a heat dissipation package substrate, comprising a carrier member, an electronic element disposed on the carrier member, a pillar body disposed on the carrier member, and a heat sink disposed on the electronic element and the pillar body, thereby gaining support from the pillar body to prevent package warpage.

Description

Heat sink type package structure

The invention relates to a package structure, in particular to a heat dissipation type package structure.

As the demand for functions and processing speed of electronic products increases, semiconductor wafers, which are the core components of electronic products, require higher density electronic components and electronic circuits, so semiconductor wafers will operate. A larger amount of thermal energy is generated, and the encapsulant system covering the semiconductor wafer is a poor heat transfer material having a thermal conductivity of only 0.8 Wm ^-1 k ^-1 (that is, the heat dissipation efficiency is not good), and thus is not effective. The heat generated by the dissipation can cause damage to the semiconductor wafer or cause product reliability problems.

Therefore, in order to quickly dissipate thermal energy into the atmosphere, a heat sink (Heat Sink or Heat Spreader) is usually disposed in the semiconductor package structure, and the conventional heat sink is bonded to the back surface of the wafer by a heat sink adhesive to utilize the heat sink and the heat sink. The heat generated by the semiconductor wafer is dissipated. Further, it is generally preferred that the top surface of the heat sink is exposed to the encapsulant or directly exposed to the atmosphere, so that a better heat dissipation effect is obtained.

However, the thermal adhesive has not met the process requirements, so the development of thermal conduction The process of Thermal Interface Material (TIM).

The conventional TIM layer is a low-temperature melting heat conductive material (such as a solder material) disposed between the back surface of the semiconductor wafer and the heat sink, and in order to improve the bonding strength between the TIM layer and the back surface of the wafer, it is necessary to apply gold on the back surface of the wafer. (The so-called Coating Gold On Chip Back), and a flux is needed to facilitate the TIM layer to follow the gold layer.

As shown in FIG. 1A, the conventional heat dissipation type semiconductor package structure 1 is formed by first mounting a semiconductor wafer 11 on its active surface 11a by flip chip bonding (that is, through the conductive bump 110 and the underfill 111). On the package substrate 10, a gold layer (not shown) is formed on the non-active surface 11b of the semiconductor wafer 11, and a heat sink 13 is used as the top sheet 130 by the TIM layer 12 (which includes the solder layer and the help The flux is rebonded to the gold layer, and the support leg 131 of the heat sink 13 is mounted on the package substrate 10 by the adhesive layer 14. Next, a package stamping operation is performed to encapsulate the semiconductor wafer 11 and the heat sink 13 with a package colloid (not shown), and the top sheet 130 of the heat sink 13 is exposed to the encapsulant and directly in contact with the atmosphere.

During operation, the thermal energy generated by the semiconductor wafer 11 is conducted to the heat sink 13 via the non-active surface 11b, the gold layer, and the TIM layer 12 to dissipate heat to the outside of the semiconductor package structure 1.

However, when the thickness of the conventional semiconductor package structure 1 is thinned and its area is larger and larger, the coefficient of thermal expansion between the heat sink 13 and the TIM layer 12 is changed (CTE Mismatch) to cause deformation (ie, warping). The degree of curvature is more obvious, so when the amount of deformation is too large, delamination between the top sheet 130 of the heat sink 13 and the TIM layer 12' is liable to occur (such as the gap d shown in FIG. 1B). Not only the thermal conductivity is reduced, but also the appearance of the semiconductor package structure 1 is poor, thus seriously affecting the reliability of the product.

Therefore, how to overcome the above problems of the prior art has become a difficult problem to be overcome in the industry.

In view of the above-mentioned various deficiencies of the prior art, the present invention provides a heat-dissipating package structure, comprising: a carrier; an electronic component is disposed on the carrier; a cylinder is disposed on the carrier; and a heat sink, The system is disposed on the electronic component and the cylinder.

In the above heat dissipation type package structure, the heat dissipating member has a heat dissipating body and a supporting leg disposed on the heat dissipating body, the heat dissipating system is coupled to the column body, and the supporting leg is coupled to the carrier member, so that the column body is located The electronic component is between the support leg.

A first colloid is formed on the carrier to bond the heat sink. The height of the cylinder is greater than the height of the first colloid. A second colloid formed on the carrier is included. For example, the height of the pillar is greater than the height of the second gel: the first colloid is adjacent to the second gel system and is disposed on the carrier and located at a periphery of the carrier; or the material of the second gel Different from the material of the first colloid.

The invention provides a heat-dissipating package structure, comprising: a carrier; an electronic component is disposed on the carrier; a first colloid is disposed on the carrier; and a second colloid is disposed on the carrier And a heat dissipating component disposed on the electronic component and combining the first colloid and/or the second colloid.

In the foregoing heat dissipation package structure, the first colloid and the second colloid The adjacent spacing is disposed on the carrier and at a periphery of the carrier.

In the above heat dissipation type package structure, the material of the second gel is different from the material of the first gel.

In the above heat dissipation type package structure, the heat dissipating member has a heat dissipating body and a supporting leg disposed on the heat dissipating body, the heat dissipating system is combined with the electronic component, and the supporting leg is coupled to the first colloid and/or the second colloid .

In the above two heat dissipation type package structures, the carrier is a package substrate or a lead frame.

In the above two heat dissipation type package structures, the electronic component is coupled to the heat sink by a bonding layer.

As can be seen from the above, the heat-dissipating package structure of the present invention is mainly designed by using a column or a first colloid and a second colloid to thin the thickness of the heat-dissipating package structure, and the area of the heat-dissipating package structure is increased. When the height is increased, the column or the first colloid is combined with the second colloid to disperse the stress, so that excessive warpage can be avoided, so that the present invention can avoid the heat sink and the bonding layer compared with the prior art. The delamination occurs to enhance the thermal conductivity and enhance the reliability of the product.

1,2‧‧‧Package structure

10‧‧‧Package substrate

11‧‧‧Semiconductor wafer

11a, 21a‧‧‧ action surface

11b, 21b‧‧‧ non-active surface

110,210‧‧‧Electrical bumps

111,211‧‧‧ 底胶

12,12’‧‧‧TIM layer

13,23‧‧‧Solder parts

130‧‧‧Top film

131,231‧‧‧Support feet

14‧‧‧Adhesive layer

20‧‧‧Carrier

21‧‧‧Electronic components

22‧‧‧Combination layer

230‧‧‧ Heat sink

24a‧‧‧First colloid

24b‧‧‧Second colloid

25‧‧‧Cylinder

D‧‧‧ gap

h, t‧‧‧ height

1A is a schematic cross-sectional view of a conventional semiconductor package structure; FIG. 1B is a schematic view showing a delamination of the semiconductor package structure of FIG. 1A; and FIG. 2 is a cross-sectional view of the heat dissipation package structure of the present invention. 3A to 3H are top views of the heat dissipation type package structure of FIG. 2 omitting various aspects of the heat sink and the bonding layer; Figure 4 is a graph showing the material of the first colloid or the second colloid.

The other embodiments of the present invention will be readily understood by those skilled in the art from this disclosure.

It is to be understood that the structure, the proportions, the size, and the like of the present invention are intended to be used in conjunction with the disclosure of the specification, and are not intended to limit the invention. The conditions are limited, so it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should remain in this book without affecting the effects and the objectives that can be achieved by the present invention. The technical content disclosed in the invention can be covered. In the meantime, the terms "upper", "lower", "first", "second" and "one" are used in this specification for convenience of description and are not intended to limit the present invention. The scope of the invention, the change or adjustment of the relative relationship, is also considered to be within the scope of the invention.

2 is a heat dissipation package structure 2 of the present invention, comprising: a carrier member 20, an electronic component 21, a bonding layer 22, a plurality of pillars 25, and a heat sink 23.

The carrier 20 is, for example, a package substrate, and the type of the package substrate is not particularly limited. In other embodiments, the carrier 20 can also be a lead frame.

The electronic component 21 is disposed on the carrier 20, and the electronic component 21 is an active component, a passive component, a package component, or a group of the three. Hehe.

In this embodiment, the active component is, for example, a semiconductor chip, such as a resistor, a capacitor, and an inductor, and the package component includes a substrate, a wafer disposed on the substrate, and an encapsulation layer covering the wafer. For example, the electronic component 21 has an opposite active surface 21a and a non-active surface 21b, and the active surface 21a is provided with a plurality of conductive bumps 210, so that the electronic component 21 is combined and electrically connected by the conductive bumps 210. The carrier 20 is connected to the conductive member 210 and covered with a primer 211. In other embodiments, the electronic component 21 can be electrically connected to the carrier 20 by wire bonding.

The bonding layer 22 is a heat conducting interface material or a thermal conductive adhesive disposed on the non-active surface 21b of the electronic component 21.

The cylinder 25 is disposed on the carrier 20 and located at the periphery of the electronic component 21, for example, at a corner or a side of the electronic component 21, and the cylinder 25 is a cylinder of various shapes, such as A combination of L-shaped, circular or rectangular shapes as shown in FIGS. 3A to 3H, and may be disposed close to or away from the periphery of the electronic component 21, but is not limited thereto.

Furthermore, the height h of the cylinder 25 is greater than the height t of the first colloid 24a.

The heat dissipating member 23 is disposed on the bonding layer 22 and has a heat dissipating body 230 and a plurality of supporting legs 231 disposed on the lower side of the heat dissipating body 230. The heat dissipating body 230 is a heat sink and the lower side contacts the bonding layer. 22, and the support leg 231 is coupled to the carrier 20 by the first colloid 24a, and is located opposite to the upper surface of the carrier 20. Further, the post 25 is located at the electric The sub-element 21 is between the support leg 231.

In the embodiment, the pillar 25 may be made of a heat conductive or non-thermal conductive material, or a metal or an insulating material, and then the pillar 25 is adhered to the lower side of the heat sink 230 or The carrier 20 is on the upper side.

Furthermore, the material of the cylinder 25 may be the same or different from the material of the heat sink 230.

Further, the layout area of the first colloid 24a corresponds to the embossed shape of the support leg 231, as shown in Figs. 3A to 3H. In the process, the first colloid 24a is formed on the sole of the support leg 231, and the first colloid 24a is pressed onto the carrier 20 by the support leg 231.

The heat-dissipating package structure 2 of the present invention is closer to the periphery of the electronic component 21 than the support leg 231, so that the thickness of the heat-dissipating package structure 2 is thinned, and the area of the heat-dissipation package structure 2 is When the size is larger, the degree of warpage of the heat dissipation package structure 2 can be reduced compared with the conventional package structure, and the surface peeling stress of the electronic component 21 can be reduced. Stress).

Therefore, the column 25 can provide a bonding force to maintain the distance between the center of the heat sink 230 and the carrier 20, so that delamination between the heat sink 230 and the bonding layer 22 can be avoided, thereby not only improving the heat conduction effect. And can enhance the reliability of the product.

In another embodiment, as shown in FIGS. 3A to 3H, the heat dissipation package structure 2 further includes a second colloid 24b formed on the carrier 20, and the first colloid 24a is located on the carrier 20 An edge to surround the electronic component 21 and the periphery of the pillar 25 to reinforce the heat sink 23 and the carrier 20 combination. Specifically, the material of the second colloid 24b and the material of the first colloid 24a may be the same or different, and the material of the first colloid 24a and the material of the second colloid 24b may refer to the graph of FIG. 4, wherein The second colloid 24b can be disposed on the supporting leg 231 so that the supporting leg 231 can be combined with the first colloid 24a and the second colloid 24b on the carrier 20, or the second colloid 24b can be combined. The support leg 231 is supported, and the material of the second colloid 24b can be of a plurality of types, and is not limited to a single type. In addition, the height of the cylinder 25 may be greater than the height of the second colloid 24b.

In other embodiments, the present invention may also provide a heat dissipation type package structure as described above, but the column body 25 is omitted, and the second glue body 24b is disposed adjacent to the first glue body 24a at the carrier member 20. The heat sink 23 is disposed on the electronic component 21 and is coupled to the first colloid 24a and/or the second colloid 24b. Therefore, when the thickness of the heat dissipation package structure is thinned and the area of the heat dissipation package structure is larger, the degree of warpage of the heat dissipation package structure is still reduced, and the surface separation stress of the electronic component 21 is reduced. Will decrease. Therefore, the second colloid 24b and the first colloid 24a can disperse stress (preferably, the material of the first colloid 24a is different from the material of the second colloid 24b) to maintain the center of the heat sink 230 and the carrier. The distance between the two 20s can avoid delamination between the heat sink 230 and the bonding layer 22, thereby not only improving the heat conduction effect, but also improving the reliability of the product.

The above embodiments are intended to illustrate the principles of the invention and its effects, and are not intended to limit the invention. Anyone skilled in the art can modify the above embodiments without departing from the spirit and scope of the present invention. change. Therefore, the scope of protection of the present invention should be as set forth in the appended claims.

2‧‧‧Package structure

20‧‧‧Carrier

21‧‧‧Electronic components

21a‧‧‧Action surface

21b‧‧‧Non-active surface

210‧‧‧Electrical bumps

211‧‧‧Bottom glue

22‧‧‧Combination layer

23‧‧‧ Heat sink

230‧‧‧ Heat sink

231‧‧‧Support feet

24a‧‧‧First colloid

25‧‧‧Cylinder

h, t‧‧‧ height

Claims (15)

A heat-dissipating package structure includes: a carrier; an electronic component is disposed on the carrier; a pillar is disposed on the carrier; and a heat sink is disposed on the electronic component and the pillar. The heat-dissipating package structure of the first aspect of the invention, wherein the heat dissipating member has a heat dissipating body and a supporting leg disposed on the heat dissipating body, the heat dissipating system combining the column body and the electronic component, and the supporting leg The bracket is coupled to the carrier such that the post is located between the electronic component and the support leg. The heat-dissipating package structure according to claim 1, further comprising a first colloid disposed on the carrier and used to bond the heat sink. The heat-dissipating package structure according to claim 3, further comprising a second colloid disposed on the carrier, so that the heat sink is coupled to the first colloid and the second colloid. The heat-dissipating package structure of claim 4, wherein the first colloid and the second glue system are adjacently disposed on the carrier. The heat-dissipating package structure of claim 4, wherein the material of the second colloid is different from the material of the first colloid. The heat-dissipating package structure of claim 4, wherein the height of the cylinder is greater than the height of the second gel. The heat-dissipating package structure according to claim 3, wherein the height of the column is greater than the height of the first gel. The heat-dissipating package structure of claim 1, wherein the column system is located at a periphery of the electronic component. A heat-dissipating package structure includes: a carrier; an electronic component is disposed on the carrier; a first gel is disposed on the carrier; a second gel is disposed on the carrier; and the heat sink And being disposed on the electronic component and combining the first colloid and/or the second colloid. The heat-dissipating package structure of claim 10, wherein the first colloid and the second glue system are adjacently disposed on the carrier. The heat-dissipating package structure according to claim 10, wherein the material of the second colloid is different from the material of the first colloid. The heat-dissipating package structure according to claim 10, wherein the heat dissipating member has a heat dissipating body and a supporting leg disposed on the heat dissipating body, the heat dissipating system is combined with the electronic component, and the supporting leg is coupled with the first a colloid and/or the second colloid. The heat-dissipating package structure according to claim 1 or 10, wherein the carrier is a package substrate or a lead frame. The heat-dissipating package structure according to claim 1 or 10, wherein the electronic component is bonded to the heat sink by a bonding layer.