TW201801248A - 可變形的導電接觸件 - Google Patents
可變形的導電接觸件 Download PDFInfo
- Publication number
- TW201801248A TW201801248A TW106121277A TW106121277A TW201801248A TW 201801248 A TW201801248 A TW 201801248A TW 106121277 A TW106121277 A TW 106121277A TW 106121277 A TW106121277 A TW 106121277A TW 201801248 A TW201801248 A TW 201801248A
- Authority
- TW
- Taiwan
- Prior art keywords
- deformable
- conductive
- substrate
- contact
- conductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
- H01L24/09—Structure, shape, material or disposition of the bonding areas after the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1301—Shape
- H01L2224/13011—Shape comprising apertures or cavities, e.g. hollow bump
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1301—Shape
- H01L2224/13016—Shape in side view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13139—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/1316—Iron [Fe] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/13166—Titanium [Ti] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/13181—Tantalum [Ta] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/1319—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
- H01L2224/1405—Shape
- H01L2224/14051—Bump connectors having different shapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/1605—Shape
- H01L2224/16057—Shape in side view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
- H01L2224/1705—Shape
- H01L2224/17051—Bump connectors having different shapes
- H01L2224/17055—Bump connectors having different shapes of their bonding interfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/731—Location prior to the connecting process
- H01L2224/73101—Location prior to the connecting process on the same surface
- H01L2224/73103—Bump and layer connectors
- H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8134—Bonding interfaces of the bump connector
- H01L2224/81345—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/819—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector with the bump connector not providing any mechanical bonding
- H01L2224/81901—Pressing the bump connector against the bonding areas by means of another connector
- H01L2224/81903—Pressing the bump connector against the bonding areas by means of another connector by means of a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/8388—Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
Abstract
本發明提供可變形的導電接觸件。第一基板上的多個可變形接觸件可在晶粒級或晶圓級的微電子裝置的組裝期間被結合至第二基板上的多個導電襯墊。每一個可變形接觸件相對於第一基板和第二基板之間的結合壓力的量值在一定程度上是順應的。由於個別接觸件可在離目標襯墊一範圍的距離內形成導電性耦合,所以當結合的任一側上的導電元件的高度有一些變化時,可變形接觸件所組成的陣列可提供容忍性和順應性。可提供可流動的底部填充物以將可變形接觸件擠壓以抵靠在相對的襯墊上並且以固定的距離永久地使表面結合。可變形接觸件可包括擦拭特徵來清潔它們的目標襯墊,以改善金屬至金屬接合或熱壓縮接合。
Description
本發明涉及可變形的導電接觸件。
在三維積體電路的生產中或電子組件中的基板或表面一般可具有由電性接觸件所組成的陣列、接合墊或格狀陣列,以與第二基板或表面上的對應電性接觸件導電性結合。接觸件的均勻性並非總是完美的。習知而言,如果單一個電性接觸件太短或過高,則在兩個表面的結合中通常沒有任何餘地以允許短的接觸件符合其目標接合襯墊,或防止高的接觸件接合附近的接觸件。這是因為習知的接觸件都假定為理想的,並且存在於待結合表面之間的介電層是被計算以用一定的、單一的、固定的距離在兩個表面的結合中提供不變的止擋。在習知晶粒或晶圓級結合製程中所缺乏的順應性導致一定百分比的最終產品的是不可接受的,因為在結合期間可能有尚未連接的一些電性接觸件。
本發明提供可變形的導電接觸件。第一表面或基板上的多個順應的可變形接觸件可被結合至第二表面或基板上的多個導電襯墊。在形成導電性耦合時,每一個順應的可變形接觸件相對於第一基板和第二基板之間的結合壓力的量值會變形達到一定程度。由於個別接觸件可在離其目
標襯墊一範圍的距離內形成導電性耦合,所以在結合的任一側上的導電元件的高度有一些不可避免的變化時,可變形接觸件的陣列可提供容忍性和順應性。可提供可流動的底部填充物以將可變形接觸件擠壓以抵靠在相對的襯墊上並且以固定的距離永久地使表面結合。可變形接觸件可包括擦拭特徵來清潔目標襯墊以建立熱壓縮接合或至少改善金屬至金屬接合,並且可被退火至目標襯墊或備有一層焊料以使導電性耦合固定。
本發明內容並非旨在識別所要請求保護的主題的關鍵或必要特徵,也不旨在用於限制所要請求保護的主題的範圍。
100‧‧‧範例性系統
102‧‧‧接觸件
104‧‧‧接觸件
106‧‧‧基板
108‧‧‧導體
110‧‧‧導體
112‧‧‧基板
114‧‧‧襯墊
116‧‧‧襯墊
118‧‧‧底部填充材料
120‧‧‧壓縮/變形
122‧‧‧擴張
124‧‧‧接近量
302‧‧‧聚合物
304‧‧‧聚合物
402‧‧‧厚度
404‧‧‧斜面
406‧‧‧高度
502‧‧‧翼部
602‧‧‧水平面
604‧‧‧斜面
606‧‧‧氧化保護劑
608‧‧‧頂部
702‧‧‧焊料
800‧‧‧接觸件
802‧‧‧接觸件
804‧‧‧接觸件
806‧‧‧接觸件
808‧‧‧接觸件
810‧‧‧接觸件
812‧‧‧接觸件
814‧‧‧接觸件
816‧‧‧接觸件
818‧‧‧接觸件
820‧‧‧變形
以下將參考附圖描述本揭示的某些實施例,其中相同的附圖標記表示相同的元件。然而應當理解附圖示出了本文描述的各種實施方式,並不意味著限制本文描述的各種技術的範圍。
圖1是範例性系統的示意圖,其中第一基板上的多個可變形接觸件結合至第二基板上的多個導電襯墊。
圖2是圖1的範例性系統的範例結合狀態的示意圖。
圖3是範例性底部填充材料的示意圖,範例性底部填充材料具有多個構件的組合、多個層或不同材料的混合物。
圖4是具有範例性可變形的導電接觸件的範例性幾何特徵的示意圖。
圖5是具有翼部的範例性可變形的導電接觸件的示意圖。
圖6是範例性可變形的導電接觸件和範例性底部填充材料的額外實施方式的示意圖。
圖7是具有一薄膜或一層的焊料的範例性可變形的導電接觸件的範例性實施方式的示意圖。
圖8是可變形接觸件的額外範例的示意圖,該可變形接觸件係用於在兩個表面之間形成導電接觸件。
圖9是具有可變形的導電接觸件的電子組件的範例性方法的流程圖。
概述
本公開描述可變形的導電接觸件。本文所述的系統和方法可應用於當兩個表面結合在一起時,將具有要被形成以橫跨兩個表面的多個電性連接的多種類型的基板或表面結合在一起。本文廣泛使用基板來表示電子裝置或材料的表面。被結合的表面可以是晶粒、晶圓、基板等的表面,如同微電子裝置中所使用的。基板可由半導體所構成,但也可由玻璃、塑膠和許多其它材料所構成。「結合(joining)」表示組合在一起,並且可(舉例而言)包括通過中間黏合劑、層、焊料或元件的永久結合。本文所述的可變形的導電接觸件和支撐性底部填充材料提供順應性的晶粒、晶圓、基板、裝置和封裝組件,其可容許被結合的導體有一些變化,同時在兩個表面或基板之間提供一致的電性路徑。
可變形接觸件可用於晶粒級製程,諸如晶粒至晶粒製程、晶粒至晶圓製程、晶粒至基板製程及中間結構組件等。可變形接觸件也可在晶圓級製程中或在晶圓至晶圓接合期間被使用,其中晶圓為全單片式(full monolithic)半導體晶圓或重新組構晶圓。因此,本文所述的技術可在晶粒
或晶圓上執行,並且可在晶粒級和晶圓級製程期間使晶粒、晶圓和基板等結合。本文中廣泛使用的「基板(substrate)」是指微電子領域中使用的材料或裝置的任何表面。
待結合的基板或其它表面可由以下所構成:矽或另一種半導體、III-V族材料、玻璃、聚合物、塑膠、酚醛樹脂、環氧樹脂、玻璃環氧樹脂以及印刷電路板等。待結合的每一個表面具有與第二相對表面上的相對的電性導體耦合的電性導體。電性導體可以是積體電路的接合襯墊、互連件、連接點、直通矽穿孔、柱、凸塊、印刷電路、格狀陣列或其他在結合期間可以被導電性地從一表面連接到另一個表面的導電實體物。
範例性系統
圖1示出了範例性系統100。可變形的導電接觸件102、104被設置在第一基板106上,並且被導電性連接至第一基板106中的各別電性導體108、110,諸如積體電路的部件或直通矽穿孔。在實施方式中,範例性第一基板106(其被結合到第二基板112)具有多個可變形的導電接觸件102、104(下文中稱為「可變形接觸件」),其每一者用於每一個被形成以橫跨兩個基板106、112之間的接面的電性連接。如在本文中所使用的,可變形代表電性接觸件102改變形狀以順應其電性目標。在實施方式中,每一個可變形接觸件102、104隨著可變形接觸件102、104壓縮120以抵靠相對的目標襯墊114、116而擴張122以抵靠其各自的目標導電襯墊114、116。依據形式,可變形接觸件102可擴張122以依照本身形狀的擴張、彎折或彎曲通過彎曲、彎折、翹曲、凸起或鉸合(hinging)而與目標襯墊114導電性耦合。同樣地,可變形接觸件102可由葉片狀分枝(leaf-like arm)所形成,
葉狀分枝足夠薄以沿著它們的長度的擴張而彎折,以在通過結合力的施加被迫使往上120抵靠目標襯墊114時順應目標襯墊114。
底部填充材料118(諸如介電質或不同材料的組合)在多個可變形接觸件102、104下方或在多個可變形接觸件102、104下方流動,並且向接觸件102、104施加壓力以擠壓接觸件102、104以抵靠第二基板112的相對表面上的目標襯墊114、116。可變形接觸件102、104周圍的底部填充材料118亦決定了接觸件102、104抵靠它們在第二基板112的相對表面上的對應目標襯墊114、116的剛性和彈性。
圖2示出了範例性系統100的範例性結合狀態。在實施方式中,底部填充材料118亦可決定每一個接觸件102、104最大程度的變形、形狀變化或壓縮120,並且最後決定兩個經結合的表面106、112之間的永久距離124,因為底部填充材料118最終為結合動作提供了不可壓縮的止擋。底部填充材料118也可冷卻或硬化以將經結合的表面106、112保持、黏附或膠黏在一起。
每一個可變形接觸件102、104獨立地順應其各自的目標導電襯墊114、116,個別地順應120(舉例而言,擴張122)至由接觸件102和各別的目標襯墊114之間的個別距離所要求的程度,如同形成較佳導電性耦合所需要的。許多可變形接觸件102、104(其作為一組或多個)提供順應性系統100以用於橫跨許多電性接觸件102、104(包括可能不完美的接觸件以及可能不在所要高度的接觸件)形成成功的導電性耦合。
因此,範例性系統100可具有在第一基板106上的多個可變形接觸件102、104及在第二基板112上的多個導電襯墊114、116,每一個
可變形接觸件102、104能夠在第一基板106被結合至第二基板112時與對應的導電襯墊114、116導電性耦合。每一個可變形接觸件102、104被配置為相對於抵靠每一個對應的導電襯墊114、116的壓縮程度來順應(諸如,擴張122)。至少一底部填充材料118被設置在第一基板106和第二基板112之間,以使每一個可變形接觸件102、104抵靠每一個對應的導電襯墊114、116,並決定了第一基板106到第二基板112的最近的接近量124。
如圖3所示,範例性底部填充材料118可具有多個構件的組合(諸如,多個層),或可以是不同材料的混合物。在各種實施方式中,該至少一底部填充材料118可以是第一固體底部填充材料302而結合了第二可流動(液體或具延展性)304底部填充材料118。底部填充材料118可以是介電質,舉例而言單一個固體介電質或單一個可流動介電質。或者,底部填充材料118可以是由固體介電質302和可流動介電質304兩者所構成。又或者,範例性底部填充材料118可以是其它固體聚合物302和可流動聚合物304的混合物或多層組合。在實施方式中,底部填充材料118為固體或可流動的熱塑性聚醯亞胺(TPI)。
在實施方式中,至少一個底部填充材料118被設置在第一基板106上。在另一實施方式中,底部填充材料118反而被初始地設置在所述第二基板112上。在又另一實施方式中,底部填充材料118可以在第一基板106被結合至第二基板112之前被設置在第一基板106和第二基板112兩者上。如同上面所介紹的,底部填充材料118或多個底部填充材料118的組合可以冷卻或硬化,以將第一基板106與第二基板112彼此以固定距離124永久地結合。
範例性可變形的導電接觸件
圖4示出了範例性可變形的導電接觸件102和相對的目標導電襯墊114。儘管被示出為平坦的,但是目標導電襯墊可以是其它各種設計,諸如凹形、凸形、脊狀或環形(環狀)。此外,目標導電襯墊114可以與第二基板112的表面齊平,或是從第二基板112突出,或是凹入第二基板112中。
圖4示出了作為截錐體的範例性可變形的導電接觸件102的實施方式的截面圖。然而,可變形的導電接觸件102可用許多不同的設計、樣式和幾何形狀來實現。舉例而言,可變形接觸件102可被實現為具有導電材料的葉片、彈簧片、彈簧、可撓性杯體、具有導電材料的可彎折指狀物、彎曲構件、折疊構件、彎折構件、三葉片式或四葉片式的苜蓿葉形結構或苜蓿葉形的構件、V形構件、具有翼部的V形構件、U形構件、L形構件以及Y形構件,或如圖4所示的截錐體。
範例性可變形的導電接觸件102可由電子工業中使用的許多導電材料所製成。範例性建構材料包括銅合金、銅、青銅、磷青銅、鋼、鈦、銀、銀鎢、銀碳化鎢、銅鎢、銀石墨、銀碳化鎢石墨、銀鉬、銀鎳、銅石墨、鉭、導電聚合物及其他導電材料。
可變形的導電接觸件102可用許多不同的尺寸來實現,諸如相對大的尺寸以用於結合印刷電路板與離散構件(可變形的導電接觸件102為幾毫米),且可小到非常小的接觸件102(幾微米)以用於在晶粒級和晶圓級製程期間以更精細水準的組裝、堆疊和封裝晶圓、晶片、晶粒以及互連件的精細的電路、引線和跡線。
如圖4所示,可加以選擇厚度402(未按比例繪製)和可變形接觸件102的幾何形狀以及所用材料的特性、斜面404與垂直方向的結合力所夾的角度以及可變形接觸件102在底部填充材料118的固體層302上面的可擴展部分的高度406,以限定個別可變形接觸件102的順應性所需的力。因此,在基板106上的多個接觸件102中的個別可變形接觸件102的數量決定了當將基板106結合到第二基板112時,多個可變形接觸件102的順應性所需的總結合力。
範例性擦拭及接合功能
在實施方式中,可變形接觸件102的形狀或設計可以依據目標導電襯墊114而與其相互影響且橫跨而目標導電襯墊114的表面,以提供導電性接觸件或接合。舉例而言,可變形接觸件102橫跨襯墊114的擴張122或開口變形可在目標導電襯墊114上產生擦拭動作,增強了與襯墊114的電性耦合。
圖5示出了亦具有諸如輔助的附加物的一或多個翼部502的可變形接觸件102的實施方式,以便於促進電性接觸或物理性能。翼部502可以是穩定構件,以使可變形接觸件102在壓縮期間對齊,且翼部502可以是被添加以增加與目標襯墊114的導電性表面面積接觸的導電構件,且可以是增加上述擦拭效果的擦拭構件。無論可變形接觸件102是否具有翼部502,可變形接觸件102皆可壓縮、形變、改變形狀、或在結合運動的方向上變形120,並且可在垂直於或正交於結合運動方向的一或多個方向上擴張122或擴張開,以執行目標襯墊114的擦拭運動。
可變形接觸件102、翼部502、或其它擦拭構件可橫跨目標
導電襯墊114執行清潔或刮擦動作,而從目標襯墊114亦從其自身清潔非導電性薄膜或氧化物層,以在構件之間形成更明確的金屬至金屬的電性接觸件。
施加的結合壓力可導致可變形接觸件102或相關的擦拭構件、翼部502(舉例而言)冷焊至目標襯墊114或第二導體。可變形接觸件102和目標導電襯墊114之間的金屬至金屬接面可形成熱壓縮接合或以其他方式變成導電性耦合,其具有金屬至金屬接合區而在可變形接觸件102(或擦拭構件502)的第一金屬和目標襯墊114的第二金屬之間沒有可區分的邊界。為了形成此金屬擴散接合,兩個基板以足以使可變形接觸件102的導電性金屬和目標襯墊114在接面處通過原子擴散而焊接至彼此中的壓力和溫度而組合在一起,而接面成為固體結晶接合區。
在實施方式中,在結合期間,可變形接觸件102能夠在升高的溫度下、在超音波的施加下、或在升高的溫度下和在超音波的施加兩者下退火或燒結至目標導電襯墊114或第二導體。在實施方式中,同樣升高的溫度和超音波的施加也可使底部填充材料118固化或硬化,以完成兩個表面106、112之間的結合。
表面翼部502的幾何形狀可被選擇以增加翼部502的表面面積,並在翼部502和目標襯墊114之間提供與可變形接觸件114獨自與目標襯墊114的表面接觸面積將有的量值相比較高的表面接觸面積。所增加的翼部502表面接觸面積增加了可變形接觸件102的導電性翼展,並且能夠即使在可變形接觸件與目標襯墊114有稍微錯位時也使可變形接觸件102與目標導電襯墊114接觸。
額外的實施方式和特徵
圖6示出了可變形接觸件102和底部填充材料118的額外的實施方式。雖然在某些情況下兩個或更多個實施例可以在同一基板106上一起使用,但是圖6中所示的實施方式不必然會出現在相同的基板106上。
底部填充材料118可被放置以形成一或多個層直到可變形接觸件102的一選擇水平面602。由底部填充材料118直到初始填充的水平面602所提供的支撐可決定了可變形接觸件102的可變形性、可壓縮性、可擴展性或彈性。
底部填充材料118的凸緣、套環或斜面604可逐漸變細直到可變形接觸件102的接觸邊緣。聚合物或其它底部填充材料118的該斜面604可進一步加強或強化可變形接觸件102的可壓縮性和可打開性(openability)。底部填充材料118的凸緣或斜面604可增加基板上的多個可變形接觸件102上方所需的結合壓力量值,以壓縮和展開該多個可變形觸點102。然而,通過具有凸緣或斜面604來增加所需結合壓力量值的益處是,使得每一個可變形接觸件102在凸緣或斜面604存在時可以更大的力向對應的目標襯墊114擠壓。這防止了可變形接觸件102的變形、壓縮或展開不會出現過小的壓力,而可能損害電性耦合的品質。
氧化保護劑606可被添加到可變形接觸件102的導電接觸表面。氧化保護劑606可取決於可變形接觸件102的組成,諸如取決於是何種金屬、合金或其他導電材料被用來形成可變形接觸件102。在實施方式中,由金、鉑或其他貴金屬或惰性金屬所組成的薄層或薄膜可被沉積、電鍍或濺鍍到可變形接觸件102和/或目標襯墊114的接觸表面上,以確保金屬至
金屬接觸或熱壓縮接合和電性耦合有高品質。
在實施方式中,底部填充材料118(諸如介電質或其它聚合物)可最初地被沉積於可變形接觸件102的頂部608、接觸邊緣或翼部502附近。在此情形下的初始預結合狀態中,(舉例而言)底部填充材料118在翼部502的突出部下面沒有底切。在實施例608中,底部填充材料118可將翼部502的接觸表面面積擠壓(舉例而言)而直接進入目標襯墊114,由底部填充材料118直接支撐和支持而幾乎沒有或不允許導電接觸件102的彈性或變形性以產生耦合壓力。然而,可至少部分地使用可流動的底部填充材料118,以使得在底部填充材料118在結合的力下順應時,如果一些可變形接觸件102相對於其目標焊盤114比其他可變形接觸件102更短或更高,則個別可變形接觸件102接著能夠個別地順應。換句話說,第一基板106和第二基板112之間的空間可起始於相對滿的底部填充材料118,但是當底部填充材料118熔化或流動時,每一個個別可變形接觸件102皆能夠與各別的目標襯墊114形成牢固的導電接觸件,且在所有時間內以底部填充材料118支撐。
圖7示出了焊料702或其它接合或合金用劑所組成的膜或層,其被添至到圖6中所示的可變形接觸件102的每一個實施方式中。焊料702可在升高的溫度下是可流動的(舉例而言,在183℃到350℃範圍內的溫度下),以固定每一個導電性耦合中的導電接合。用以熔化焊料702的升高的溫度可在與使底部填充材料118是可流動的所施加的在相同的溫度範圍內。在實施方式中,一旦冷卻時,整個經結合的封裝會固化且硬化成經牢固地結合的基板106、112,而在多個可變形接觸件102和多個導電目標
襯墊114之間有經牢固地焊接的導電性耦合。
圖8示出了用於在電子組裝製程中形成導電接觸件的可變形接觸件800的額外範例。範例性可變形接觸件800的示出是為了說明可變形接觸件800可具有許多不同形狀。所示出的範例性可變形接觸件800的集合並不意味著限制性或排他性的。在圖8中示出的範例性可變形接觸件800的尺寸的制訂只是為了說明形狀和功能的不同,並不意味著要限制部件的尺度、尺寸或特徵。
所示出的可變形接觸件800的範例可用不同的尺寸來實現。可變形接觸件800可以是相對較大的,或者可以在微米尺度上被實現,而有一些尺寸僅是幾微米的長度、寬度、深度、高度或直徑。
在俯視圖中,範例性可變形接觸件802具有兩個沿著一線對稱的可撓性可變形葉片。在變形期間,兩個可撓性葉片804可彎折並展開至與目標導體形成順應性導電接觸件之所需要的各種程度,目標導體可落在離範例性可變形接觸件802的不同範圍的距離內。在單一個表面上的多個可變形接觸件802可各自展開並開起至不同程度以形成各自的導電性耦合。
在俯視圖中,另一範例性可變形接觸件806具有對於一點對稱的三個可撓性可變形葉片。在變形期間,三個可撓性葉片808可彼此彎折並展開至與目標導體形成順應性導電接觸件之所需要的各種相同或不同程度,目標導體可在離範例性可變形接觸件802的各種距離處,並且可在離三葉片式的可變形接觸件806的每一個葉片的不同距離處。在單一個表面上的多個可變形接觸件806可各自展開並開起至不同程度及不同形狀以
形成各自的導電性耦合。
在俯視圖中,另一範例性可變形接觸件810具有對於一點且橫跨不同線段對稱的四個可撓性可變形葉片。在變形期間,四個可撓性葉片812可彎折並彼此展開至與目標導體形成順應性導電接觸件之所需要的各種相同或不同程度,目標導體可在離範例性可變形接觸件810的各種距離處,並且可在離四葉片式的可變形接觸件806的每一個葉片的不同距離處。在單一個表面上的多個可變形接觸件806可各自展開並開起至不同程度及不同形狀以形成各自的電性耦合。
在俯視圖中,另一範例性可變形接觸件814具有截錐體形狀其具有狹縫、分割線或鋸齒以在變形期間(諸如,在壓縮期間)提供順應性可變形構件。在變形816期間,範例性可變形接觸件814可順應性地打開並且構件會展開以與目標導體形成順應性導電接觸件,目標導體可在離範例性可變形接觸件814的各種距離處。在單一個表面上的多個可變形接觸件8141可各自展開並開起至不同程度及不同形狀以形成各自的導電性耦合。
在俯視圖中,另一範例性可變形接觸件818具有對中心點對稱的淺碟形狀或杯體形狀。在變形820期間,範例性可變形接觸件818的碟形狀或杯體形狀可打開並擴大至與目標導體形成順應性導電接觸件所需要的各種程度,目標導體可在離範例性可變形接觸件818的各種距離處。在單一個表面上的多個可變形接觸件818可各自展開並開起至不同程度及不同形狀以形成各自的電性耦合。
許多其他形狀和尺寸的範例性可變形接觸件800可以在所
描述的主題的範圍內實施。舉例而言,所給定的範例性可變形觸點800也可具有如上面進一步描述的額外翼部或附加件。
範例性方法
圖9示出了在結合具有可變形的導電接觸件的兩個表面時形成導電性連接的範例性方法900。圖9的流程圖以個別的區塊示出了範例性方法900的操作。
在區塊902,多個可變形的導電接觸件被放置在第一基板上。在實施方式中,多個可變形的導電接觸件中的每一個可變形的導電接觸件具有擦拭特徵或擦拭構件,以清潔在目標導體上所存在的薄膜或碎屑並形成良好的金屬至金屬電性接觸。
在區塊904,將多個導體(諸如導電襯墊)被放置在第二基板上。
在區塊906,底部填充材料被提供在第一基板和第二基板之間,以將多個可變形的導電接觸件擠壓以抵靠多個導電襯墊。在實施方式中,底部填充材料可包括介電質或聚合物。在實施方式中,底部填充材料是由可流動材料或多種材料的組合所構成,以形成至少一個固體材料層和至少一個可流動材料層。
在區塊908,第一基板(舉例而言)通過中間層被結合到第二基板。如果使用可流動的底部填充材料,則可允許可流動的底部填充物固化、冷卻或硬化,從而提供經牢固地結合的封裝而在現在被結合的第一基板上的多個可變形接觸件和第二基板上的目標導電襯墊之間有一致的電性路徑。
在說明書和所附申請專利範圍中,術語「將…連接」、「連接」、「被…連接」、「與…連接」、「連接…」是用以表示「與…直接連接」或「經由一或多個元件與…連接」。術語「將…耦合」、「耦合…」、「被…耦合」、「被…耦合在一起」、「與…耦合」是用來表示「被…直接耦合在一起」或「通過一或多個元件被…耦合在一起」。
雖然已對於幾個實施例揭示了本發明,但是本領域的技術人員(即,看了本揭示有益處的人),將體會到在本說明書中可能的許多修改和變化。所附申請專利範圍旨在包涵落入本公開的真實精神和範圍內的此類修改和變化。
100‧‧‧範例性系統
102‧‧‧接觸件
104‧‧‧接觸件
106‧‧‧基板
108‧‧‧導體
110‧‧‧導體
112‧‧‧基板
114‧‧‧襯墊
116‧‧‧襯墊
118‧‧‧底部填充材料
120‧‧‧壓縮/變形
122‧‧‧擴張
Claims (20)
- 一種系統,其包括:在第一基板上的多個可變形接觸件;在第二基板上的多個導電襯墊;在所述第一基板結合至所述第二基板時,每一個可變形接觸件與對應的導電襯墊電性耦合;每一個可變形接觸件被配置以相對於抵靠每一個對應的導電襯墊的壓縮程度來改變形狀;在所述第一基板和所述第二基板之間的至少一底部填充材料,所述至少一底部填充材料使每一個可變形接觸件變形而抵靠每一個對應的導電襯墊並且決定所述第一基板至所述第二基板的最近的接近量。
- 如請求項1的系統,其中每一個可變形接觸件進一步包括在與對應的導電襯墊電性耦合時用於橫跨對應的導電襯墊的表面移動之至少一擦拭表面。
- 如請求項1的系統,其中每一個可變形接觸件包括能夠提供多個可變形程度的幾何形狀,以在所述多個可變形接觸件中的每一個可變形接觸件和所述多個導電襯墊中的每一個對應的導電襯墊之間提供對於接近量變化的順應性。
- 如請求項1的系統,其中所述至少一底部填充材料選自由以下所組成的群組:第一固體底部填充材料和第二可流動底部填充材料、可流動介電質、固體介電質、固體介電質和可流動介電質兩者、固體和可流動聚合物的混合物、以及熱塑性聚酰亞胺。
- 如請求項1的系統,其中在所述第一基板被結合至所述第二基板之前,所述至少一底部填充材料被設置在所述第一表面上、所述第二表面上、或是所述第一表面和所述第二表面兩者上;以及其中所述至少一底部填充材料冷卻或硬化,以將所述第一基板永久性地結合至所述第二基板。
- 如請求項1的系統,其中每一個可變形接觸件包括選自由以下所組成的群組的導電構件:可撓性導體、可撓性杯體、截錐體、具有導電材料的葉片、彈簧片、具有導電材料的苜蓿葉形結構、彈簧、具有導電材料的可彎折指狀物、彎曲構件、折疊構件、彎折構件、V形構件、具有翼部的V形構件、U形構件、L形構件、以及Y形構件。
- 一種裝置,其包括:可變形的電性接觸件,用以在第一表面接近第二表面時,在所述第一表面的第一導體和所述第二表面的第二導體之間形成導電性耦合;以及所述可變形的電性接觸件的擦拭表面,其被配置以在形成所述導電性耦合時橫跨所述第二導體移動。
- 如請求項7的裝置,進一步包括具有至少一底部填充材料的一或多個層,以填充所述第一表面和所述第二表面之間的至少一部分空間;其中具有至少一底部填充材料的所述一或多個層進一步包括聚合物材料或介電質,以在橫跨所述第二導體移動時為所述擦拭表面提供支撐力;以及其中所述聚合物材料或所述介電質決定所述擦拭表面的最大移動程度。
- 如請求項8的裝置,其中具有所述至少一底部填充材料的所述一或多個層中的至少一層在所述第一表面和所述第二表面的結合期間是可流動的。
- 如請求項7的裝置,其中所述可變形的電性接觸件包括選自由以下所組成的群組的導電構件:具有導電材料的葉片、彈簧片、具有導電材料的苜蓿葉形結構、彈簧、可撓性杯體、截錐體、具有導電材料的可彎折指狀物、彎曲構件、折疊構件、彎折構件、V形構件、具有翼部的V形構件、U形構件、L形構件、以及Y形構件。
- 如請求項7的裝置,其中所述可變形的電性接觸件的幾何形狀在結合方向上變形,並且在垂直於所述結合方向的一或多個方向上擴張或擴展開以執行所述第二導體的擦拭。
- 如請求項7的裝置,其中所述擦拭表面被配置以在所述第二導體的擦拭來形成所述電性耦合期間清潔所述第二導體上的非導電膜。
- 如請求項7的裝置,其中在結合期間的所述第一表面和所述第二表面之間的壓力使得所述可變形的電性接觸件焊接至所述第二導體,其中所述可變形的電性接觸件和所述第二導體之間的焊接包括熱壓縮接合、擴散接合、或金屬至金屬接合。
- 如請求項7的裝置,其中在結合期間,在升高的溫度下、或在超音波的施加下、或是在升高的溫度以及在超音波的施加兩者下,所述可變形的電性接觸件能夠進行退火或燒結至所述第二導體。
- 如請求項7的裝置,其中所述可變形的電性接觸件進一步包括至少一翼部,以在所述可變形的電性接觸件變形以抵靠所述第二導體時,維持 與所述第二導體有一固定量的表面面積接觸。
- 如請求項15的裝置,其中除了與所述可變形的電性接觸件的表面面積接觸之外,所述至少一翼部亦提供表面面積接觸的額外面積,所述額外面積能夠在所述可變形的電性接觸件與所述第二導體錯位時與所述第二導體形成接觸。
- 如請求項7的裝置,進一步包括所述可變形的電性接觸件上的至少一層焊料,以固定所述導電性耦合。
- 如請求項7的裝置,進一步包括在所述可變形的電性接觸件上之一薄膜或一層的氧化保護劑。
- 一種方法,其包括:將多個可變形的導電接觸件放置在第一基板上;將多個導體放置在第二基板上;在所述第一表面和所述第二表面之間提供底部填充材料,以使所述多個可變形的導電接觸件變形以抵靠所述多個導體;以及結合所述第一基板與所述第二基板,以使所述可變形的導電接觸件與所述第二基板的所述多個導體進行導電性耦合。
- 如請求項19的方法,進一步包括為每一個可變形的導電接觸件提供擦拭特徵;以及其中,提供所述底部填充材料進一步包括提供具有至少一聚合物固體層和至少一聚合物可流動層的混合物,以在給定壓力下將所述擦拭特徵擠壓到所述導體之中。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/195,617 | 2016-06-28 | ||
US15/195,617 US9947633B2 (en) | 2016-06-28 | 2016-06-28 | Deformable conductive contacts |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201801248A true TW201801248A (zh) | 2018-01-01 |
Family
ID=60675071
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW106121277A TW201801248A (zh) | 2016-06-28 | 2017-06-26 | 可變形的導電接觸件 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9947633B2 (zh) |
TW (1) | TW201801248A (zh) |
WO (1) | WO2018005152A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117936517A (zh) * | 2024-03-25 | 2024-04-26 | 江苏中科智芯集成科技有限公司 | 一种重布线层结构及其制备方法、半导体封装结构 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5414298A (en) * | 1993-03-26 | 1995-05-09 | Tessera, Inc. | Semiconductor chip assemblies and components with pressure contact |
WO1998026476A1 (en) * | 1996-12-13 | 1998-06-18 | Tessera, Inc. | Electrical connection with inwardly deformable contacts |
US7435108B1 (en) * | 1999-07-30 | 2008-10-14 | Formfactor, Inc. | Variable width resilient conductive contact structures |
US7189077B1 (en) * | 1999-07-30 | 2007-03-13 | Formfactor, Inc. | Lithographic type microelectronic spring structures with improved contours |
US7244125B2 (en) * | 2003-12-08 | 2007-07-17 | Neoconix, Inc. | Connector for making electrical contact at semiconductor scales |
JP5200306B2 (ja) * | 2008-10-17 | 2013-06-05 | 株式会社アドバンストシステムズジャパン | 導電性接合コンタクタ |
KR101147115B1 (ko) * | 2010-05-07 | 2012-05-30 | 한국과학기술원 | 경사진 전도성 범프를 갖는 칩 및 그 제조방법과, 칩을 구비한 전자부품의 제조방법 |
-
2016
- 2016-06-28 US US15/195,617 patent/US9947633B2/en active Active
-
2017
- 2017-06-19 WO PCT/US2017/038182 patent/WO2018005152A1/en active Application Filing
- 2017-06-26 TW TW106121277A patent/TW201801248A/zh unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117936517A (zh) * | 2024-03-25 | 2024-04-26 | 江苏中科智芯集成科技有限公司 | 一种重布线层结构及其制备方法、半导体封装结构 |
CN117936517B (zh) * | 2024-03-25 | 2024-06-04 | 江苏中科智芯集成科技有限公司 | 一种重布线层结构及其制备方法、半导体封装结构 |
Also Published As
Publication number | Publication date |
---|---|
US9947633B2 (en) | 2018-04-17 |
WO2018005152A1 (en) | 2018-01-04 |
US20170373033A1 (en) | 2017-12-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8207604B2 (en) | Microelectronic package comprising offset conductive posts on compliant layer | |
JP6975260B2 (ja) | 適合可能なターゲットパッドによる変形可能な電気接点 | |
US4998885A (en) | Elastomeric area array interposer | |
JP4728782B2 (ja) | 半導体装置およびその製造方法 | |
US8536047B2 (en) | Methods and systems for material bonding | |
CN103077936A (zh) | 布线基板及其制造方法 | |
US11810892B2 (en) | Method of direct bonding semiconductor components | |
CN101295692B (zh) | 半导体装置 | |
JP6261819B1 (ja) | 半導体装置および半導体装置の製造方法 | |
JP2020523790A5 (zh) | ||
TW201801248A (zh) | 可變形的導電接觸件 | |
JP4480417B2 (ja) | 電極バンプ及びその製造並びにその接続方法 | |
CN114270201A (zh) | 小间距集成刀刃临时结合微结构 | |
KR20090037819A (ko) | 웨이퍼 또는 회로 보드 및 웨이퍼 또는 회로 보드의 접합 구조 | |
JP6174473B2 (ja) | 実装方法 | |
JP2009026566A (ja) | 接触子の接合方法 | |
JP2004165391A (ja) | 半導体装置の製造装置 | |
JP2005203558A (ja) | 半導体装置及びその製造方法 | |
CN116564915A (zh) | 多层基板表面处理层结构 | |
JP2003045911A (ja) | 半導体素子の実装構造および実装用配線基板 | |
JPH1064954A (ja) | 半導体装置の製造方法および製造装置 | |
JP2002093854A (ja) | フリップチップ実装構造及びその製造方法 | |
JP2010103196A (ja) | 半導体チップの接合構造および半導体チップの接合方法 | |
JP2005353669A (ja) | バンプを有する構造体とその製造方法 | |
JP2005353668A (ja) | 構造体とその製造方法及び接合方法 |