TW201742197A - Lead frame, method of manufacturing the same and semiconductor package - Google Patents
Lead frame, method of manufacturing the same and semiconductor package Download PDFInfo
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- TW201742197A TW201742197A TW106105053A TW106105053A TW201742197A TW 201742197 A TW201742197 A TW 201742197A TW 106105053 A TW106105053 A TW 106105053A TW 106105053 A TW106105053 A TW 106105053A TW 201742197 A TW201742197 A TW 201742197A
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- Prior art keywords
- lead frame
- pad
- smooth surface
- support rod
- wire
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- 239000004065 semiconductor Substances 0.000 title claims description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000007747 plating Methods 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 43
- 238000004080 punching Methods 0.000 claims description 37
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 30
- 229910052709 silver Inorganic materials 0.000 claims description 30
- 239000004332 silver Substances 0.000 claims description 30
- 238000007789 sealing Methods 0.000 claims description 29
- 229920005989 resin Polymers 0.000 claims description 25
- 239000011347 resin Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 22
- 238000003825 pressing Methods 0.000 claims description 20
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 15
- 239000005751 Copper oxide Substances 0.000 claims description 14
- 229910000431 copper oxide Inorganic materials 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- 229910000679 solder Inorganic materials 0.000 claims description 7
- 238000005476 soldering Methods 0.000 claims description 5
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 4
- 238000004381 surface treatment Methods 0.000 claims description 4
- 238000007788 roughening Methods 0.000 claims description 3
- 238000005452 bending Methods 0.000 description 42
- 239000002585 base Substances 0.000 description 16
- 239000013078 crystal Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000011342 resin composition Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 238000004873 anchoring Methods 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- 229940112669 cuprous oxide Drugs 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 229940098221 silver cyanide Drugs 0.000 description 1
- LFAGQMCIGQNPJG-UHFFFAOYSA-N silver cyanide Chemical compound [Ag+].N#[C-] LFAGQMCIGQNPJG-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4842—Mechanical treatment, e.g. punching, cutting, deforming, cold welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/49524—Additional leads the additional leads being a tape carrier or flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
- H01L23/49555—Cross section geometry characterised by bent parts the bent parts being the outer leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
本揭示內容係關於導線架及其製造方法，以及半導體封裝體。 The present disclosure relates to leadframes and methods of making the same, as well as semiconductor packages.
半導體封裝體，係具備：導線架、裝載於其上方之半導體晶片、以及密封半導體晶片之密封樹脂。半導體封裝體的製造中，係以熱硬化性樹脂覆蓋導線架及裝載於其上方之半導體晶片，並加熱此而使其硬化。為了確保半導體封裝體的可靠度，為人所知者有使導線架的表面粗糙化以提升導線架與密封樹脂之密著性之技術。 The semiconductor package includes a lead frame, a semiconductor wafer mounted thereon, and a sealing resin for sealing the semiconductor wafer. In the manufacture of a semiconductor package, a lead frame and a semiconductor wafer mounted thereon are covered with a thermosetting resin, and heated to be cured. In order to secure the reliability of the semiconductor package, it is known to have a technique of roughening the surface of the lead frame to improve the adhesion between the lead frame and the sealing resin.
專利文獻1(日本特開平3-295262號公報)中，為了提升密著性，已提出一種將導線架浸漬在氧化性的鹼溶液等，以使導線架表面的銅進行陽極氧化而形成針狀的氧化皮膜之方法。專利文獻2(日本特開2014-221941號公報)中，係記載一種於導線架的表面形成粗糙化電鍍層之方法。如此，探討使導線架的表面粗糙化，並藉由錨定效果提升與密封樹脂之密著性。 In order to improve the adhesion, it has been proposed to immerse a lead frame in an oxidizing alkali solution or the like to anodize copper on the surface of the lead frame to form a needle shape, as disclosed in Japanese Laid-Open Patent Publication No. Hei No. 3-295262. The method of oxide film. In the patent document 2 (JP-A-2014-221941), a method of forming a roughened plating layer on the surface of a lead frame is described. In this way, it is discussed that the surface of the lead frame is roughened, and the adhesion to the sealing resin is improved by the anchoring effect.
當製造焊墊與導線的高度位置不同之導線架時，對支撐焊墊之支撐桿進行彎曲加工。此彎曲加工，係一邊以衝壓模板壓制支撐桿，一邊以衝壓頭按壓而進行。根據本發明人的探討，專利文獻1、2之技術中，進行彎曲加工時，以衝壓頭所進行之按壓，有時會產生以衝壓模板壓制會滑動之現象，擔心此變成彎曲加工進一步的精度提升阻礙。 When a lead frame having a different height position of the bonding pad and the wire is manufactured, the support bar supporting the bonding pad is bent. This bending process is performed by pressing the support bar with a press die while pressing with a punch. According to the inventors of the present invention, in the techniques of Patent Documents 1 and 2, when the bending process is performed, the pressing by the punching head may cause a phenomenon in which the pressing is performed by pressing the punching plate, and this may become a further precision of the bending process. Raise obstacles.
因此，本發明中，在某一態樣中，係以提供一種形狀的精度優異之導線架作為目的。本發明在另一態樣中，係以提供一種具備該導線架之半導體封裝體作為目的。本發明，在再另一態樣中，係以提供一種可提升彎曲加工的精度之導線架的製造方法作為目的。 Therefore, in the present invention, in a certain aspect, it is an object to provide a lead frame excellent in the accuracy of one shape. In another aspect, the present invention is directed to providing a semiconductor package including the lead frame. The present invention, in still another aspect, aims to provide a method of manufacturing a lead frame which can improve the accuracy of bending processing.
本發明，在一態樣中，係提供一種導線架，其係具備：焊墊、配置在焊墊的周圍之導線、以及支撐焊墊之支撐桿之導線架；支撐桿及導線，分別具有粗糙面與平滑面，於一方的主面側，支撐桿的平滑面較導線的平滑面更接近於焊墊。 In one aspect, the present invention provides a lead frame comprising: a solder pad, a wire disposed around the pad, and a lead frame supporting the support bar of the pad; the support rod and the wire are respectively rough The surface and the smooth surface are on the main surface side of one side, and the smooth surface of the support rod is closer to the solder pad than the smooth surface of the wire.
根據上述導線架，在一邊以衝壓模板壓制支撐桿，一邊以衝壓頭按壓而進行彎曲加工時，可抑制該壓制產生滑動之現象。藉此，可構成形狀的精度優異之導線架。得到此效果之理由，可推測如下。 According to the lead frame described above, when the support rod is pressed by a press template on one side and the bending process is performed by pressing with a press head, the phenomenon of sliding by the press can be suppressed. Thereby, a lead frame excellent in shape accuracy can be formed. The reason for obtaining this effect is presumed as follows.
在導線架上的粗糙面，由於具有針狀的結晶等，故若以衝壓模板壓制粗糙面，結晶等被壓潰而粉化，認為此成為滑動的因素。另一方面，本發明之一態樣之導 線架中，由於支撐桿的平滑面較導線的平滑面更接近焊墊，故以衝壓頭按壓焊墊而進行彎曲加工時，可使衝壓模板接觸於支撐桿的平滑面。因此，與衝壓模板接觸於支撐桿的粗糙面時相比，認為可抑制滑動。此外，亦可減少因針狀結晶等的粉碎所產生之粉末。 Since the rough surface on the lead frame has needle-like crystals or the like, if the rough surface is pressed by a press template, crystals or the like are crushed and pulverized, which is considered to be a factor of sliding. On the other hand, an aspect of the invention In the wire frame, since the smooth surface of the support rod is closer to the welding pad than the smooth surface of the wire, when the punching is performed by pressing the pad with the punching head, the punching template can be brought into contact with the smooth surface of the support bar. Therefore, it is considered that the sliding can be suppressed as compared with when the punching die plate is in contact with the rough surface of the support bar. Further, it is also possible to reduce the powder generated by the pulverization of needle crystals or the like.
上述支撐桿較佳係具有：以使焊墊較導線朝另一主面側突出之方式彎折之彎折部；於一主面側，支撐桿較佳係於鄰接於彎折部的外側之平坦部具有平滑面。藉此，可充分地抑制彎曲加工時之衝壓模板的滑動。藉此，可充分地提升導線架之形狀的精度。 Preferably, the support rod has a bent portion that is bent in such a manner that the soldering pad protrudes toward the other main surface side; and on one main surface side, the support rod is preferably attached to the outer side of the bent portion. The flat portion has a smooth surface. Thereby, the sliding of the stamping stencil at the time of bending processing can be fully suppressed. Thereby, the accuracy of the shape of the lead frame can be sufficiently improved.
上述支撐桿之彎折部，以平行於支撐桿的長度方向且垂直於一主面之剖面來觀看時，較佳係具有水平部與夾住該水平部之傾斜部，於一主面側，支撐桿較佳係於水平部上具有平滑面。此彎折部係在進行複數次以上的彎曲加工時所形成。即使為進行複數次彎曲加工後之導線架，由於可抑制各彎曲加工時之衝壓模板的滑動，所以可充分地提升形狀的精度。 When the bent portion of the support rod is viewed in a cross section parallel to the longitudinal direction of the support rod and perpendicular to a main surface, it is preferable to have a horizontal portion and an inclined portion sandwiching the horizontal portion on one main surface side. The support rod preferably has a smooth surface on the horizontal portion. This bent portion is formed when a plurality of bending processes are performed. Even in the lead frame after the plurality of bending processes, the sliding of the punching template at each bending process can be suppressed, so that the accuracy of the shape can be sufficiently improved.
上述平滑面較佳係由銀電鍍膜所構成。銀電鍍膜之勻化性優異且具有高的平滑性。因此，可進一步抑制彎曲加工時的滑動，並可進一步提升導線架之形狀的精度。 The smooth surface is preferably made of a silver plating film. The silver plating film is excellent in homogenization property and has high smoothness. Therefore, the sliding during the bending process can be further suppressed, and the accuracy of the shape of the lead frame can be further improved.
支撐桿之平滑面的內緣，相較於連結相互鄰接之導線之平滑面的內緣彼此之第1虛擬框線，較佳係朝焊墊側延伸存在。藉此，可充分地抑制彎曲加工時之衝 壓模板的滑動，並可充分地提升導線架之形狀的精度。 The inner edge of the smooth surface of the support rod preferably extends toward the pad side as compared with the first virtual frame line connecting the inner edges of the smooth surfaces of the adjacent wires. Thereby, the punching during the bending process can be sufficiently suppressed The sliding of the die plate can fully improve the accuracy of the shape of the lead frame.
相對於由連結相互鄰接之導線之平滑面的內緣彼此之第1虛擬框線、與連結鄰接之導線之平滑面的外緣彼此之第2虛擬框線所夾之環狀區域，支撐桿的平滑面較佳係朝焊墊偏離。藉由將導線與支撐桿的平滑面之位置關係構成如上所述，即使不使支撐桿的平滑面延伸存在至外緣附近為止，亦可抑制彎曲加工時之衝壓模板的滑動。再者，由於可縮小支撐桿之平滑面的面積，故可充分地提高與密封樹脂之密著性，並提升形狀的精度。 The support rod is supported by an annular region sandwiched between the first virtual frame line connecting the inner edges of the smooth surfaces of the adjacent wires and the second virtual frame line connecting the outer edges of the smooth surfaces of the adjacent wires. The smooth surface is preferably offset toward the pad. By configuring the positional relationship between the wire and the smooth surface of the support rod as described above, even if the smooth surface of the support rod is not extended to the vicinity of the outer edge, the sliding of the punching template during the bending process can be suppressed. Further, since the area of the smooth surface of the support rod can be made small, the adhesion to the sealing resin can be sufficiently improved, and the accuracy of the shape can be improved.
上述粗糙面較佳係由氧化銅皮膜或粗糙化電鍍皮膜所構成。藉此，可以低成本充分地提高與密封樹脂之密著性。 The above rough surface is preferably composed of a copper oxide film or a roughened plating film. Thereby, the adhesion to the sealing resin can be sufficiently improved at low cost.
本發明，在其他之態樣，係提供一種半導體封裝體，其係具備：上述導線架，於導線架之一主面側，位於焊墊的表面上之半導體晶片，以及密封半導體晶片之密封樹脂；於導線架之另一主面側，密封樹脂以使焊墊的表面暴露出之方式設置。 According to another aspect of the invention, there is provided a semiconductor package comprising: the lead frame, a semiconductor wafer on a surface of one of the lead frames, a semiconductor wafer on a surface of the bonding pad, and a sealing resin for sealing the semiconductor wafer On the other main surface side of the lead frame, the sealing resin is disposed in such a manner that the surface of the bonding pad is exposed.
上述焊墊暴露形式的半導體封裝體所具備之導線架，即使對支撐桿施以彎曲加工，該形狀的精度亦優異。 The lead frame provided in the semiconductor package of the exposed pad type is excellent in precision of the shape even if the support bar is subjected to bending.
本發明係在另外之態樣，提供一種導線架的製造方法，該導線架具備：焊墊、配置在焊墊的周圍之導線、以及支撐焊墊之支撐桿；該方法具有：於導線架基材之一主面側，於支撐桿及導線上分別形成粗糙面與平滑 面之表面處理步驟；以及，一邊以衝壓模板壓制支撐桿的平滑面，一邊以衝壓頭按壓焊墊，將支撐桿彎折以形成彎折部，而使焊墊較導線朝之另一主面側突出之第1加工步驟。 In another aspect, the present invention provides a method of manufacturing a lead frame, the lead frame having: a bonding pad, a wire disposed around the bonding pad, and a support bar supporting the bonding pad; the method having: the lead frame base One of the main faces of the material forms a rough surface and smoothness on the support rod and the wire a surface treatment step of the surface; and, while pressing the smooth surface of the support rod with a stamping template, pressing the bonding pad with a punching head, bending the support rod to form a bent portion, and causing the bonding pad to face the other main surface of the wire The first processing step of the side protrusion.
此製造方法中，支撐桿中的粗糙面與平滑面中，一邊以衝壓模板壓制平滑面，一邊以衝壓頭按壓焊墊以將支撐桿彎折，使焊墊較導線朝另一主面側突出。因此，於衝壓模板與支撐桿之接觸面，可抑制該壓制產生滑動之現象。藉此，可提高彎曲加工的精度。此外，亦可進一步提升彎曲加工時的穩定性。 In the manufacturing method, in the rough surface and the smooth surface in the support rod, the smooth surface is pressed by the stamping template, and the soldering pad is pressed by the punching head to bend the supporting rod, so that the bonding pad protrudes toward the other main surface side than the wire. . Therefore, in the contact surface of the stamping template and the support rod, the phenomenon that the pressing is caused to slip can be suppressed. Thereby, the precision of the bending process can be improved. In addition, the stability during bending can be further improved.
上述之製造方法係可具有：一邊以衝壓模板壓制較上述彎折部更朝焊墊側的平滑面，一邊以衝壓頭按壓焊墊以將上述彎折部擴張，而使焊墊較導線更朝另一主面側突出之第2加工步驟。此時，於衝壓模板與支撐桿之接觸面上，亦可抑制該壓制產生滑動之現象。藉此，可提高彎曲加工的精度。此外，亦可進一步提升彎曲加工時的穩定性。 The manufacturing method described above may include: pressing a soldering pad with a punching head to press the bonding pad to press the bonding pad to press the bonding pad to press the bonding pad to make the bonding pad more toward the wire The second processing step in which the other main surface side protrudes. At this time, the phenomenon that the pressing is caused to slip can be suppressed on the contact surface between the stamping die plate and the support bar. Thereby, the precision of the bending process can be improved. In addition, the stability during bending can be further improved.
於上述製造方法中的表面處理步驟中，可藉由銀電鍍處理形成平滑面，藉由銅電鍍處理或粗糙化電鍍處理形成粗糙面。藉此，可充分地抑制衝壓模板與支撐桿之接觸面的滑動，並以低成本製造密封樹脂的密著性亦優異之導線架。 In the surface treatment step in the above manufacturing method, a smooth surface may be formed by a silver plating treatment, and a rough surface may be formed by a copper plating treatment or a roughening plating treatment. Thereby, the sliding of the contact surface of the press die plate and the support bar can be sufficiently suppressed, and the lead frame excellent in the sealing property of the sealing resin can be manufactured at low cost.
本發明中，在一態樣中，可提供一種形狀的精度優異之導線架。本發明在其他之態樣中，可提供一 種具備該導線架之半導體封裝體。本發明在另外之態樣上，可提供一種可提升彎曲加工的精度之導線架的製造方法。 In the present invention, in one aspect, a lead frame excellent in the shape accuracy can be provided. In other aspects of the present invention, a A semiconductor package having the lead frame. In another aspect, the present invention provides a method of manufacturing a lead frame that can improve the accuracy of bending processing.
10‧‧‧焊墊 10‧‧‧ solder pads
10a、10b、12a‧‧‧表面 10a, 10b, 12a‧‧‧ surface
11‧‧‧連設部 11‧‧‧Connected Department
12‧‧‧導線 12‧‧‧ wire
12A‧‧‧前端部 12A‧‧‧ front end
12B‧‧‧基端部 12B‧‧‧ base end
12x‧‧‧內導線部 12x‧‧‧Internal wire section
12y‧‧‧外導線部 12y‧‧‧External lead
14、14A、14B‧‧‧支撐桿 14, 14A, 14B‧‧‧ support rod
16‧‧‧連結桿 16‧‧‧ Connecting rod
17‧‧‧基端部 17‧‧‧ base end
20、20A‧‧‧彎折部 20, 20A‧‧‧ bends
21‧‧‧水平部 21‧‧‧ horizontal department
23、25‧‧‧傾斜部 23, 25‧‧‧ sloping section
28‧‧‧平坦部 28‧‧‧ Flat section
29‧‧‧連接部 29‧‧‧Connecting Department
30‧‧‧平滑面 30‧‧‧ Smooth surface
31‧‧‧銀電鍍皮膜 31‧‧‧Silver plating film
32‧‧‧粗糙面 32‧‧‧Rough surface
33‧‧‧氧化銅皮膜 33‧‧‧ Copper oxide film
33A‧‧‧粗糙化電鍍皮膜 33A‧‧‧Rough plating film
34‧‧‧遮罩 34‧‧‧ mask
40‧‧‧環狀區域 40‧‧‧Circular area
42‧‧‧第1虛擬框線 42‧‧‧1st virtual frame
44‧‧‧第2虛擬框線 44‧‧‧2nd virtual frame
50、51‧‧‧上衝壓頭 50, 51‧‧‧Up stamping head
52、53‧‧‧下衝壓頭 52, 53‧‧‧Under stamping head
52A、53A‧‧‧凹部 52A, 53A‧‧‧ recess
52B‧‧‧外周部 52B‧‧‧The outer part
53B‧‧‧第1外周部 53B‧‧‧1st peripheral part
53C‧‧‧第2外周部 53C‧‧‧2nd Week
54、55‧‧‧衝壓模板 54, 55‧‧‧ Stamping template
100、102、102A、103、104、105‧‧‧導線架 100, 102, 102A, 103, 104, 105‧‧‧ lead frame
70‧‧‧半導體晶片 70‧‧‧Semiconductor wafer
72‧‧‧接合線路 72‧‧‧Connected lines
80‧‧‧密封樹脂 80‧‧‧ sealing resin
100a、101a、102a、103a、105a、105b‧‧‧主面 100a, 101a, 102a, 103a, 105a, 105b‧‧‧ main faces
101‧‧‧導線架基材 101‧‧‧ lead frame substrate
300‧‧‧半導體封裝體 300‧‧‧Semiconductor package
第1圖係一實施形態之導線架之俯視圖。 Fig. 1 is a plan view of a lead frame of an embodiment.
第2圖係第1圖之II-II線剖面圖。 Fig. 2 is a sectional view taken along line II-II of Fig. 1.
第3圖(A)、第3圖(B)、第3圖(C)及第3圖(D)係用以說明將平滑面及粗糙面形成於導線架基材之方法的一例之圖。 3(A), 3(B), 3(C), and 3(D) are views for explaining an example of a method of forming a smooth surface and a rough surface on a lead frame substrate.
第4圖(A)、第4圖(B)及第4圖(C)係用以說明將平滑面及粗糙面形成於導線架基材之方法的其他例之圖。 4(A), 4(B) and 4(C) are views for explaining another example of a method of forming a smooth surface and a rough surface on a lead frame substrate.
第5圖(A)、第5圖(B)、第5圖(C)及第5圖(D)係用以說明第4圖(A)、第4圖(B)及第4圖(C)中所說明之方法的變形例之圖。 Figures 5(A), 5(B), 5(C) and 5(D) are used to illustrate Figures 4(A), 4(B) and 4(C). A diagram of a variation of the method described in the ).
第6圖係用以說明第1加工步驟之圖。 Figure 6 is a diagram for explaining the first processing step.
第7圖係用以說明第2加工步驟之圖。 Figure 7 is a diagram for explaining the second processing step.
第8圖係放大顯示於導線架的彎曲加工時之衝壓模板與支撐桿之接觸面附近之剖面圖。 Fig. 8 is an enlarged cross-sectional view showing the vicinity of the contact surface of the stamping die and the support bar during the bending process of the lead frame.
第9圖係其他實施形態之導線架之俯視圖。 Figure 9 is a plan view of a lead frame of another embodiment.
第10圖係另外實施形態之導線架之俯視圖。 Figure 10 is a plan view of a lead frame of another embodiment.
第11圖係另外實施形態之導線架之俯視圖。 Figure 11 is a plan view of a lead frame of another embodiment.
第12圖係一實施形態之半導體封裝體之剖面圖。 Figure 12 is a cross-sectional view showing a semiconductor package of an embodiment.
以下，視情況參考圖面，說明本發明之實施形態。惟以下的實施形態僅為用以說明本發明之例示，並非用以將本發明限定於以下之內容。於說明中，同一要素或具有同一功能之要素，係使用同一符號，並視情況來省略重複之說明。此外，上下左右等之位置關係，只要無特別言明，係設為根據圖面所示之位置關係者。再者，圖面的尺寸比率並不限於圖示的比率。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. The following embodiments are merely illustrative of the invention and are not intended to limit the invention to the following. In the description, the same elements or elements having the same function are denoted by the same reference numerals, and the description thereof will be omitted as appropriate. In addition, the positional relationship of up, down, left, and the like is set as the positional relationship according to the drawing, unless otherwise specified. Furthermore, the size ratio of the drawings is not limited to the illustrated ratio.
第1圖係本實施形態之導線架100之俯視圖。導線架100係具備：位於中央部分之焊墊10、配置在焊墊10的周圍之複數條導線12、以及支撐焊墊10之4根支撐桿14。支撐桿14的前端，係在焊墊10之角部的連設部11上連設，支撐桿14的基端係連設於配置在導線12的周圍之連結桿16。支撐桿14係從大致呈矩形狀之焊墊10的4個角落輻射狀地延伸存在，並藉由連設於連結桿16而支撐焊墊10。 Fig. 1 is a plan view of a lead frame 100 of the present embodiment. The lead frame 100 includes a pad 10 at a central portion, a plurality of wires 12 disposed around the pad 10, and four support bars 14 supporting the pads 10. The front end of the support rod 14 is connected to the connecting portion 11 at the corner of the pad 10, and the base end of the support rod 14 is connected to the connecting rod 16 disposed around the wire 12. The support bars 14 extend radially from the four corners of the substantially rectangular pad 10 and support the pads 10 by being connected to the tie bars 16.
導線架100係於一主面100a側，半導體晶片被裝載於焊墊10。6條導線12排列而配設於焊墊10的各邊，該前端部12A係透過預定的間隔而與焊墊10的各邊對向。導線12於主面100a側，係於前端部12A側具有平滑面30，於基端部12B側具有粗糙面32。 The lead frame 100 is mounted on a main surface 100a side, and the semiconductor wafer is mounted on the bonding pad 10. The six wires 12 are arranged to be disposed on each side of the bonding pad 10, and the front end portion 12A is passed through the predetermined interval and the bonding pad 10 The sides are opposite. The lead wire 12 has a smooth surface 30 on the side of the front end portion 12A and a rough surface 32 on the side of the base end portion 12B.
支撐桿14係於主面100a側，位於與焊墊10之連設部11附近的彎折部20，以及鄰接於彎折部20之平坦部28上，具有平滑面30，於連設部11及基端部17上具有粗糙面32。彎折部20例如為彎曲加工部。粗糙面 32含有針狀結晶。另一方面，平滑面30較粗糙面32更平滑，且不含針狀結晶。 The support rod 14 is disposed on the side of the main surface 100a, is located at a bent portion 20 adjacent to the connecting portion 11 of the bonding pad 10, and is adjacent to the flat portion 28 of the bent portion 20, and has a smooth surface 30 at the connecting portion 11 And the base end portion 17 has a rough surface 32. The bent portion 20 is, for example, a bent portion. Rough surface 32 contains needle crystals. On the other hand, the smooth surface 30 is smoother than the rough surface 32 and does not contain needle crystals.
第1圖中，焊墊10的表面10a係由粗糙面32所構成，但由於半導體晶片的接地接合等之線路接合，表面10a的一部分可具有由銀電鍍皮膜等所構成之平滑面30。粗糙面32係可僅形成於較由密封樹脂所密封之連結桿16更內側之區域。 In the first drawing, the surface 10a of the pad 10 is composed of a rough surface 32. However, a part of the surface 10a may have a smooth surface 30 made of a silver plating film or the like due to wire bonding such as ground bonding of a semiconductor wafer. The rough surface 32 may be formed only in a region further inside than the connecting rod 16 sealed by the sealing resin.
從製造成本降低及與密封樹脂之密著性提升之觀點來看，粗糙面32可由氧化銅皮膜或粗糙化電鍍皮膜所構成。從充分地抑制支撐桿14與衝壓模板之接觸面的滑動之觀點來看，平滑面30可由銀電鍍皮膜所構成。 The rough surface 32 may be composed of a copper oxide film or a roughened plating film from the viewpoint of a reduction in manufacturing cost and an increase in adhesion to the sealing resin. The smooth surface 30 can be composed of a silver plating film from the viewpoint of sufficiently suppressing the sliding of the contact surface of the support rod 14 and the stamping die.
如第1圖所示，導線架100從一主面100a側俯視觀看時，支撐桿14的平滑面30較導線12的平滑面30更接近焊墊10。亦即，支撐桿14的平滑面30較導線12的平滑面30更延伸存在至內側為止。此導線架100，在用以使焊墊10朝與主面100a相反側突出所進行之支撐桿14的彎曲加工時，可充分地抑制支撐桿14與衝壓模板之接觸面的滑動發生。因此，導線架100之形狀的精度優異。 As shown in FIG. 1, when the lead frame 100 is viewed from a side of the main surface 100a, the smooth surface 30 of the support rod 14 is closer to the bonding pad 10 than the smooth surface 30 of the wire 12. That is, the smooth surface 30 of the support rod 14 extends further to the inner side than the smooth surface 30 of the wire 12. In the lead frame 100, when the support pad 14 for projecting the bonding pad 10 toward the side opposite to the main surface 100a is bent, the sliding of the contact surface between the support bar 14 and the stamping die can be sufficiently suppressed. Therefore, the shape of the lead frame 100 is excellent in accuracy.
導線架100中，由連結相互鄰接之導線12之平滑面30的內緣(焊墊10側的緣)彼此之第1虛擬框線42、與連結相互鄰接之導線12之平滑面的外緣(連結桿16側的緣)彼此之第2虛擬框線44所夾之區域，如第1圖所示般，大致呈環狀。以下，將此區域稱為環狀區域40。 In the lead frame 100, the first virtual frame line 42 connecting the inner edges of the smooth surfaces 30 of the wires 12 adjacent to each other (the edges on the pad 10 side) and the outer edges of the smooth surfaces of the wires 12 adjacent to each other are connected ( The region sandwiched by the second virtual frame wires 44 on the side of the connecting rod 16 is substantially annular as shown in Fig. 1 . Hereinafter, this region will be referred to as an annular region 40.
第1虛擬框線42，係由：連結相互鄰接之 導線12之平滑面30的內緣之4條直線、以及連結該直線與支撐桿14的側緣之交叉點彼此之4條直線所構成。第2虛擬框線44係由：連結相互鄰接之導線12之平滑面30的外緣之4條直線狀的虛擬線、以及連結該直線與支撐桿14的側緣之交叉點彼此之4條直線狀的虛擬線所構成。第2虛擬框線44較第1虛擬框線42更大，第1虛擬框線42包含於第2虛擬框線44。因此，藉由兩者形成環狀區域40。第1虛擬框線42與第2虛擬框線44可為相似形。 The first virtual frame line 42 is connected to each other by a connection The four straight lines of the inner edge of the smooth surface 30 of the wire 12 and the four straight lines connecting the intersection of the straight line and the side edge of the support rod 14 are formed. The second virtual frame line 44 is composed of four linear virtual lines connecting the outer edges of the smooth surfaces 30 of the adjacent wires 12 and four straight lines connecting the intersections of the straight lines and the side edges of the support rods 14 The shape of the virtual line. The second virtual frame line 44 is larger than the first virtual frame line 42 , and the first virtual frame line 42 is included in the second virtual frame line 44 . Therefore, the annular region 40 is formed by both. The first virtual frame line 42 and the second virtual frame line 44 may be similar in shape.
支撐桿14之平滑面30的外緣係與第2虛擬框線44一致。相對於此，支撐桿14之平滑面30的內緣係較環狀區域40更朝焊墊10側延伸存在。如此，支撐桿14係於焊墊10的附近，平滑面30的面積變大。藉此，可充分地增大於彎曲加工時之支撐桿14與衝壓模板之接觸面之平滑面30的面積或面積比率。因此，可進一步抑制彎曲加工時的滑動。 The outer edge of the smooth surface 30 of the support rod 14 coincides with the second virtual frame line 44. On the other hand, the inner edge of the smooth surface 30 of the support rod 14 extends further toward the pad 10 side than the annular region 40. Thus, the support rod 14 is in the vicinity of the pad 10, and the area of the smooth surface 30 becomes large. Thereby, the area or area ratio of the smooth surface 30 of the contact surface of the support rod 14 and the stamping die at the time of bending processing can be sufficiently enlarged. Therefore, the sliding at the time of bending processing can be further suppressed.
彎折部20係設置在支撐桿14之與焊墊10的連設部11以及第1虛擬框線42之間(包含第1虛擬框線42上)。平滑面30係形成於從第2虛擬框線44至包含彎折部20的至少一部分之區域為止。惟平滑面30的區域並不限定於此，於主面100a上，可涵蓋彎折部20的全體而形成，或是延伸存在至連設部11為止。 The bent portion 20 is provided between the support portion 14 of the support bar 14 and the bonding pad 10 and the first virtual frame line 42 (including the first virtual frame line 42). The smooth surface 30 is formed from the second virtual frame line 44 to a region including at least a part of the bent portion 20. However, the region of the smooth surface 30 is not limited thereto, and may be formed on the main surface 100a so as to cover the entire portion of the bent portion 20 or extend to the connecting portion 11.
第2圖係第1圖之II-II線剖面圖。亦即為以平行於支撐桿14的長度方向且垂直於主面100a之面來切斷時之剖面圖。支撐桿14係具有：基端部17、以及以 使焊墊10相對於導線12朝主面100a側突出之方式所彎折之彎折部20。支撐桿14係於主面100a側，於彎折部20的一部分以及鄰接於彎折部20的外側之平坦部28具有平滑面30。亦即，支撐桿14係於第2圖所示之主面100a側的區域P中，具有平滑面30。另一方面，支撐桿14係於第2圖所示之主面100a側的區域P以外之區域中，具有粗糙面32。 Fig. 2 is a sectional view taken along line II-II of Fig. 1. That is, it is a cross-sectional view when it is cut in a direction parallel to the longitudinal direction of the support rod 14 and perpendicular to the main surface 100a. The support rod 14 has a base end portion 17, and The bent portion 20 bent so that the bonding pad 10 protrudes toward the main surface 100a side with respect to the wire 12. The support rod 14 is attached to the main surface 100a side, and has a smooth surface 30 on a part of the bent portion 20 and a flat portion 28 adjacent to the outer side of the bent portion 20. That is, the support rod 14 is in the region P on the side of the main surface 100a shown in FIG. 2, and has a smooth surface 30. On the other hand, the support rod 14 has a rough surface 32 in a region other than the region P on the main surface 100a side shown in Fig. 2 .
焊墊10的表面10a係由粗糙面32所構成。主面100a側之焊墊10、支撐桿14及導線12的表面，亦由粗糙面32所構成。惟當導線架100為焊墊暴露型式時，焊墊10的表面10b較佳係由平滑面30所構成。 The surface 10a of the pad 10 is composed of a rough surface 32. The surface of the pad 10, the support rod 14, and the wire 12 on the main surface 100a side is also composed of a rough surface 32. Preferably, the surface 10b of the pad 10 is formed by the smooth surface 30 when the leadframe 100 is in the exposed pattern of the pads.
彎折部20係具有：水平部21、以及夾住水平部21之傾斜部23、25。於第2圖所示之剖面圖中，水平部21係與焊墊10平行。另一方面，傾斜部23、25係於第2圖所示之剖面圖中，相對於水平部21及焊墊10呈傾斜。第2圖中，傾斜部23、25係朝向焊墊10朝下方傾斜。藉此，焊墊10於第2圖中朝下方傾斜。 The bent portion 20 has a horizontal portion 21 and inclined portions 23 and 25 that sandwich the horizontal portion 21. In the cross-sectional view shown in Fig. 2, the horizontal portion 21 is parallel to the pad 10. On the other hand, the inclined portions 23 and 25 are in the cross-sectional view shown in Fig. 2, and are inclined with respect to the horizontal portion 21 and the pad 10. In the second drawing, the inclined portions 23 and 25 are inclined downward toward the bonding pad 10. Thereby, the pad 10 is inclined downward in FIG. 2 .
彎折部20之中，較佳係至少水平部21具有平滑面30。藉此，可充分地抑制衝壓模板與支撐桿14之接觸面之滑動的產生。傾斜部23、25可為平滑面30及粗糙面32之任一者，惟若外側的傾斜部23為平滑面30，則可將平滑面30一體地形成於平坦部28、傾斜部23及水平部21。 Among the bent portions 20, at least the horizontal portion 21 preferably has a smooth surface 30. Thereby, the occurrence of the sliding of the contact surface between the punching die plate and the support rod 14 can be sufficiently suppressed. The inclined portions 23 and 25 may be either the smooth surface 30 or the rough surface 32. However, if the outer inclined portion 23 is the smooth surface 30, the smooth surface 30 can be integrally formed on the flat portion 28, the inclined portion 23, and the horizontal surface. Department 21.
本實施形態之導線架100中之支撐桿14的 彎折部20，分別具有1個水平部21以及夾住此水平部21之傾斜部23、25，但本發明並不限定於此。其他一些實施形態的彎折部，亦可為不具有水平部，而由1個傾斜部所構成者，或是具有2個以上的水平部以及連結各水平部之傾斜部者。 The support rod 14 in the lead frame 100 of the present embodiment Each of the bent portions 20 has one horizontal portion 21 and inclined portions 23 and 25 that sandwich the horizontal portion 21, but the present invention is not limited thereto. The bent portion of some other embodiments may be formed of one inclined portion without having a horizontal portion, or may have two or more horizontal portions and inclined portions connecting the horizontal portions.
以下，係說明導線架100之製造方法的一例。此製造方法係具有：藉由對成為母材之帶狀金屬板進行蝕刻或模鍛，而形成具有焊墊、配置在焊墊的周圍之導線、以及支撐焊墊之支撐桿之平板狀的導線架之製備步驟；於導線架基材之一主面，於支撐桿及導線上分別形成粗糙面與平滑面之表面處理步驟；一邊以衝壓模板壓制支撐桿的平滑面，一邊以衝壓頭按壓焊墊，將支撐桿彎折以形成彎折部，而使焊墊較導線朝導線架基材之另一主面側突出之第1加工步驟；以及一邊以衝壓模板壓制較上述彎折部更朝內側的平滑面，一邊以衝壓頭按壓焊墊以將彎折部擴張，而使焊墊較導線更朝另一主面側突出之第2加工步驟。 Hereinafter, an example of a method of manufacturing the lead frame 100 will be described. The manufacturing method includes: forming a flat wire having a bonding pad, a wire disposed around the bonding pad, and a support bar supporting the bonding pad by etching or swaging the strip-shaped metal plate to be a base material a preparation step of the frame; forming a rough surface and a smooth surface on the support rod and the wire on one main surface of the lead frame substrate; and pressing the smooth surface of the support rod with the stamping template while pressing the stamping head a pad, the first processing step of bending the support bar to form a bent portion to protrude the wire from the other main surface side of the lead frame substrate; and pressing the stamping template to the side of the bent portion The smooth surface on the inner side is a second processing step in which the bonding pad is pressed by the punching head to expand the bent portion, and the bonding pad protrudes toward the other main surface side from the lead wire.
在製備步驟中所形成之導線架基材，除了為平板狀以外，其他具有與導線架100同等之形狀。將粗糙面與平滑面形成於此導線架基材。第3圖係說明形成平滑面30及粗糙面32之方法的一例之圖。如第3圖(A)所示，於導線架基材101之一主面101a側，於成為粗糙面32之部分上設置遮罩34。接著對導線架基材101施以銀電鍍處理，如第3圖(B)所示，於未形成遮罩34之預定部分，形 成構成平滑面30之銀電鍍皮膜31。 The lead frame substrate formed in the preparation step has the same shape as the lead frame 100 except for a flat plate shape. A rough surface and a smooth surface are formed on the lead frame substrate. Fig. 3 is a view showing an example of a method of forming the smooth surface 30 and the rough surface 32. As shown in FIG. 3(A), a mask 34 is provided on a portion of the main surface 101a of the lead frame substrate 101 to be a rough surface 32. Next, the lead frame substrate 101 is subjected to a silver plating treatment, as shown in FIG. 3(B), in a predetermined portion where the mask 34 is not formed. The silver plating film 31 constituting the smooth surface 30 is formed.
銀電鍍皮膜31係於預定部分形成遮罩34後，可藉由進行採用DC電源或脈衝電源等之電解電鍍處理來形成。藉此，可於預定部分形成銀電鍍皮膜31。電解電鍍處理所使用之電鍍浴，例如可列舉出氰化銀電鍍浴。 After the silver plating film 31 is formed into a mask 34 at a predetermined portion, it can be formed by electrolytic plating treatment using a DC power source or a pulse power source. Thereby, the silver plating film 31 can be formed in a predetermined portion. The electroplating bath used in the electrolytic plating treatment may, for example, be a silver cyanide plating bath.
形成銀電鍍皮膜31後，如第3圖(C)所示，去除遮罩34。然後，施以氧化處理，如第3圖(D)所示，於未形成銀電鍍皮膜31之部分，形成構成了粗糙面32之氧化銅皮膜33。若依此順序來進行，則可不需以遮罩來遮蔽而形成氧化銅皮膜33，所以可簡化步驟。氧化銅皮膜33及銀電鍍皮膜31的膜厚並無特別限定。 After the silver plating film 31 is formed, as shown in FIG. 3(C), the mask 34 is removed. Then, an oxidation treatment is applied, and as shown in Fig. 3(D), a copper oxide film 33 constituting the rough surface 32 is formed in a portion where the silver plating film 31 is not formed. If it is carried out in this order, the copper oxide film 33 can be formed without being shielded by a mask, so that the steps can be simplified. The film thickness of the copper oxide film 33 and the silver plating film 31 is not particularly limited.
氧化銅皮膜33係可將形成有銀電鍍皮膜之導線架基材101浸漬在強氧化性的鹼溶液，將整流器的陽極側連接於導線架基材，將陰極側連接於配置在溶液槽內之電極板，並進行陽極氧化而形成。如此方式所形成之銀電鍍皮膜，係含有氧化亞銅(Cu2O)與氧化銅(CuO)，且亦可不具有層構造。 The copper oxide film 33 can immerse the lead frame substrate 101 on which the silver plating film is formed in a strong oxidizing alkali solution, connect the anode side of the rectifier to the lead frame substrate, and connect the cathode side to the solution tank. The electrode plate is formed by anodization. The silver plating film formed in this manner contains cuprous oxide (Cu 2 O) and copper oxide (CuO), and may not have a layer structure.
氧化銅皮膜33的表面，係成為密集地形成有針狀結晶之狀態。藉此，可充分地提高與密封樹脂之密著性。粗糙面32及平滑面30的形成方法並不限定於上述方法。例如，在形成銀電鍍皮膜31之前，可在將成為支撐桿14的彎折部20及平坦部28之部分以遮罩來遮蔽之狀態下，以上述步驟形成氧化銅皮膜33。然後，去除遮罩並進行銀電鍍處理而形成銀電鍍皮膜31。藉此，可將遮蔽後的 部分設為平滑面30，將形成有氧化銅皮膜33之部分設為粗糙面32。 The surface of the copper oxide film 33 is in a state in which needle crystals are densely formed. Thereby, the adhesion to the sealing resin can be sufficiently improved. The method of forming the rough surface 32 and the smooth surface 30 is not limited to the above method. For example, before the silver plating film 31 is formed, the copper oxide film 33 can be formed in the above-described manner in a state where the bent portion 20 and the flat portion 28 of the support rod 14 are shielded by a mask. Then, the mask is removed and subjected to silver plating treatment to form a silver plating film 31. By this, it can be shaded The portion is set to the smooth surface 30, and the portion where the copper oxide film 33 is formed is referred to as a rough surface 32.
粗糙面32係可不為氧化銅皮膜33，而可由粗糙化電鍍皮膜所構成。粗糙化電鍍皮膜可為銅電鍍皮膜，亦可為鎳電鍍皮膜。粗糙化電鍍皮膜可在鎳電鍍皮膜上依序具有鈀電鍍皮膜及金電鍍皮膜。此時，粗糙面32係由金電鍍皮膜所構成。 The rough surface 32 may not be the copper oxide film 33 but may be composed of a roughened plating film. The roughened plating film may be a copper plating film or a nickel plating film. The roughened plating film may have a palladium plating film and a gold plating film sequentially on the nickel plating film. At this time, the rough surface 32 is composed of a gold plating film.
第4圖係說明形成平滑面30及粗糙面32之方法的其他例之圖。如第4圖(A)所示，於導線架基材101的主面101a側，於成為平滑面30之部分設置遮罩34。然後進行粗糙化電鍍皮膜，如第4圖(B)所示，形成具有針狀結晶之粗糙化電鍍皮膜33A。粗糙化電鍍皮膜的形成方法因電鍍液的種類而異。例如，若為鎳電鍍皮膜，則以直流電源來進行電鍍處理。若為粗糙化銅電鍍皮膜，則使用極性反轉電源來進行電鍍處理。然後，去除遮罩34，進行銀電鍍處理，如第4圖(C)所示，形成構成平滑面30之銀電鍍皮膜31。粗糙化電鍍皮膜33A及銀電鍍皮膜31的膜厚並無特別限定。 Fig. 4 is a view showing another example of a method of forming the smooth surface 30 and the rough surface 32. As shown in FIG. 4(A), on the main surface 101a side of the lead frame base material 101, a mask 34 is provided on a portion which becomes the smooth surface 30. Then, the roughened plating film is formed, and as shown in Fig. 4(B), a roughened plating film 33A having needle crystals is formed. The method of forming the roughened plating film varies depending on the type of the plating solution. For example, in the case of a nickel plating film, plating treatment is performed by a DC power source. In the case of a roughened copper plating film, a polarity inversion power source is used for the plating treatment. Then, the mask 34 is removed and silver plating treatment is performed, and as shown in Fig. 4(C), the silver plating film 31 constituting the smooth surface 30 is formed. The film thickness of the roughened plating film 33A and the silver plating film 31 is not particularly limited.
第5圖係說明第4圖的變形例之圖。當粗糙化電鍍皮膜33A為粗糙化銅電鍍皮膜時，可藉由以下步驟形成平滑面30及粗糙面32。如第5圖(A)所示，於導線架基材101的主面101a側形成粗糙化銅電鍍皮膜33A。如第5圖(B)所示，於成為粗糙面32之部分設置遮罩34。然後，如第5圖(C)所示，進行銀電鍍處理，於成為平滑面30之 部分，以覆蓋粗糙化銅電鍍皮膜33A之方式形成銀電鍍皮膜31。形成銀電鍍皮膜31時，即使底層為粗糙化銅電鍍皮膜33A，由於銀電鍍皮膜31之勻化性佳且亦具有厚度，所以銀電鍍皮膜31的表面成為平滑面30。若去除遮罩34，如第5圖(D)所示，則可得到於一主面101a側具有平滑面30及粗糙面32之導線架基材101。於另一主面側，亦可進行同一或同樣的處理而形成平滑面30及粗糙面32。 Fig. 5 is a view for explaining a modification of Fig. 4. When the roughened plating film 33A is a roughened copper plating film, the smooth surface 30 and the rough surface 32 can be formed by the following steps. As shown in Fig. 5(A), a roughened copper plating film 33A is formed on the main surface 101a side of the lead frame substrate 101. As shown in FIG. 5(B), a mask 34 is provided in a portion which becomes the rough surface 32. Then, as shown in FIG. 5(C), silver plating treatment is performed to form a smooth surface 30. In part, the silver plating film 31 is formed in such a manner as to cover the roughened copper plating film 33A. When the silver plating film 31 is formed, even if the underlayer is the roughened copper plating film 33A, since the silver plating film 31 has good homogeneity and thickness, the surface of the silver plating film 31 becomes the smooth surface 30. When the mask 34 is removed, as shown in Fig. 5(D), the lead frame substrate 101 having the smooth surface 30 and the rough surface 32 on one main surface 101a side can be obtained. On the other main surface side, the same or the same treatment may be performed to form the smooth surface 30 and the rough surface 32.
於焊墊10的表面10b從密封樹脂暴露出之Exposed-Pad型式(焊墊暴露型式)的半導體封裝體，或是導線12的表面從密封樹脂中暴露出而成為外部端子之QFN封裝體中，若可提高導線架基材101之一主面101a側之粗糙面32的比率，則可提升與密封樹脂之密著性。 The semiconductor package of the Exposed-Pad type (pad exposed type) exposed on the surface 10b of the pad 10 from the sealing resin, or the QFN package in which the surface of the wire 12 is exposed from the sealing resin to become an external terminal, If the ratio of the rough surface 32 on the main surface 101a side of the lead frame substrate 101 can be increased, the adhesion to the sealing resin can be improved.
另一方面，導線架基材101之另一主面中從密封樹脂所暴露出的部分，較佳為平滑面30。將連接於極性反轉電源之電極板配置在導線架基材101之一主面101a側，將連接於脈衝電源之電極板配置在另一主面側，並同時對兩主面進行銅電鍍處理，藉此，可於一主面101a側形成粗糙面32，於另一主面側形成平滑面30。 On the other hand, the portion of the other main surface of the lead frame substrate 101 exposed from the sealing resin is preferably a smooth surface 30. The electrode plate connected to the polarity inversion power supply is disposed on one main surface 101a side of the lead frame substrate 101, and the electrode plate connected to the pulse power source is disposed on the other main surface side, and the two main surfaces are simultaneously subjected to copper plating treatment. Thereby, the rough surface 32 can be formed on one main surface 101a side, and the smooth surface 30 can be formed in the other main surface side.
以電鍍皮膜或氧化銅皮膜構成平滑面30及粗糙面32並非必要，亦可為其他之皮膜，或是導線架基材的表面可直接暴露出。此時，可將導線架基材之表面的一部分遮蔽，並於其他部分形成皮膜，藉此可得到於主面101a側具有平滑面30與粗糙面32之導線架基材101。此外，於導線架基材101的主面上，在形成銀電鍍皮膜、粗糙化 電鍍皮膜、氧化銅電鍍皮膜等之前，例如可形成平滑的銅電鍍皮膜作為底層電鍍皮膜。 It is not necessary to form the smooth surface 30 and the rough surface 32 with an electroplated film or a copper oxide film, and it may be other films, or the surface of the lead frame substrate may be directly exposed. At this time, a part of the surface of the lead frame base material can be shielded, and a film can be formed in other portions, whereby the lead frame base material 101 having the smooth surface 30 and the rough surface 32 on the main surface 101a side can be obtained. Further, on the main surface of the lead frame substrate 101, a silver plating film is formed and roughened. Before the plating film, the copper oxide plating film, or the like, for example, a smooth copper plating film can be formed as the underlying plating film.
第6圖係用以說明第1加工步驟之圖。將形成有平滑面30與粗糙面32之導線架基材101，如第6圖所示，配置在上衝壓頭50與下衝壓頭52之間。下衝壓頭52係形成有具有與上衝壓頭50的形狀呈互補之形狀之凹部52A。上衝壓頭50係一邊將導線架基材101朝下方按壓一邊插入於下衝壓頭52的凹部52A。此時，導線架基材101係藉由被夾於配置在上衝壓頭50的周圍之衝壓模板54、與形成下衝壓頭52的凹部52A之外周部52B之間而固定。 Figure 6 is a diagram for explaining the first processing step. The lead frame substrate 101 on which the smooth surface 30 and the rough surface 32 are formed, as shown in Fig. 6, is disposed between the upper punch 50 and the lower punch 52. The lower punching head 52 is formed with a recess 52A having a shape complementary to the shape of the upper punching head 50. The upper punching head 50 is inserted into the concave portion 52A of the lower punching head 52 while pressing the lead frame base material 101 downward. At this time, the lead frame base material 101 is fixed by being sandwiched between the press die plate 54 disposed around the upper punch head 50 and the outer peripheral portion 52B of the recess 52A forming the lower punch head 52.
伴隨著上衝壓頭50的下降，支撐桿14B彎折，使導線架基材101的焊墊10朝下方突出，而被壓制於下衝壓頭52之凹部52A的底部。藉由此彎曲加工，於支撐桿14B形成彎折部20A。亦可使下衝壓頭52上升而進行上述彎曲加工，以取代上衝壓頭50下降。或是使上衝壓頭50下降，同時使下衝壓頭52上升而進行上述彎曲加工。 As the upper punch 50 is lowered, the support rod 14B is bent, and the pad 10 of the lead frame substrate 101 is protruded downward, and is pressed against the bottom of the recess 52A of the lower punch 52. By this bending process, the bent portion 20A is formed on the support rod 14B. Alternatively, the lower punching head 52 may be raised to perform the above-described bending process instead of lowering the upper punching head 50. Alternatively, the upper punching head 50 is lowered, and the lower punching head 52 is raised to perform the above-described bending process.
如此方式，可得到具有焊墊10朝表面10b側突出之形狀之導線架102。導線架102的形狀，除了彎折部20A之外，其他與導線架100相同，亦即，導線架102的彎折部20A，不具有水平部，而由1個傾斜部所構成。 In this manner, the lead frame 102 having the shape in which the pad 10 protrudes toward the surface 10b side can be obtained. The shape of the lead frame 102 is the same as that of the lead frame 100 except for the bent portion 20A, that is, the bent portion 20A of the lead frame 102 does not have a horizontal portion but is constituted by one inclined portion.
如第6圖所示，彎曲加工時，導線架102(導線架基材101)係與衝壓模板54於鄰接於彎折部20A的外側之平坦部28的平滑面30接觸。因此，可抑制於衝壓模 板54與導線架102(導線架基材101)的平坦部28之接觸面上之滑動的產生。藉此，可得到彎曲加工的精度經提升後之導線架102。 As shown in Fig. 6, at the time of bending, the lead frame 102 (the lead frame base material 101) is in contact with the smooth surface 30 of the flat plate portion 28 adjacent to the outer side of the bent portion 20A. Therefore, it can be suppressed in the stamping die The sliding of the plate 54 and the flat surface 28 of the lead frame 102 (the lead frame substrate 101) is generated by sliding. Thereby, the lead frame 102 with improved precision of the bending process can be obtained.
第7圖係用以說明第2加工步驟之圖。將第1加工步驟中所得到之導線架102，配置在上衝壓頭51與下衝壓頭53之間。下衝壓頭53係形成具有與上衝壓頭51的形狀呈互補之形狀之凹部53A，上衝壓頭51係一邊按壓導線架102一邊插入於凹部53A。此時，導線架102係藉由被夾於配置在上衝壓頭51的周圍之衝壓模板55、與形成下衝壓頭53的凹部53A之第1外周部53B之間而固定。平坦部28係抵接於設置在第1外周部53B的周圍之第2外周部53C。 Figure 7 is a diagram for explaining the second processing step. The lead frame 102 obtained in the first processing step is disposed between the upper punch 51 and the lower punch 53. The lower punching head 53 is formed with a recessed portion 53A having a shape complementary to the shape of the upper punching head 51, and the upper punching head 51 is inserted into the recessed portion 53A while pressing the lead frame 102. At this time, the lead frame 102 is fixed by being sandwiched between the stamping die plate 55 disposed around the upper punching head 51 and the first outer peripheral portion 53B of the recess 53A forming the lower punching head 53. The flat portion 28 is in contact with the second outer peripheral portion 53C provided around the first outer peripheral portion 53B.
在第2加工步驟所使用之上衝壓頭51係具有比在第1加工步驟所使用之第6圖的上衝壓頭50更小一圈之下端面。在第2加工步驟所使用之下衝壓頭53的凹部53A係具有比在第1加工步驟所使用之第6圖的下衝壓頭52的凹部52A更小一圈之底面。 The upper punching head 51 used in the second processing step has a lower end surface than the upper punching head 50 of Fig. 6 used in the first processing step. The recess 53A of the punch head 53 used in the second processing step has a bottom surface which is smaller than the recess 52A of the lower punch 52 of the sixth drawing used in the first processing step.
伴隨上衝壓頭51的下降，支撐桿14進一步彎折，使導線架102的焊墊10更朝下方突出。於此彎曲加工時，較導線架102的彎曲部20A更內側的部分(第6圖之支撐桿14B與焊墊10之連接部29)被夾於衝壓模板55與下衝壓頭53的第1外周部53B之間。連接部29之主面100a側的表面係由平滑面30所構成。藉由此彎折加工，導線架102之支撐桿14B的彎折部20A，朝內側(焊墊10側)擴張， 而形成彎折部20A。亦可使下衝壓頭53上升而進行上述彎曲加工，以取代上衝壓頭51下降之動作。或是使上衝壓頭51下降，同時使下衝壓頭53上升而進行上述彎曲加工。 With the lowering of the upper punch 51, the support rod 14 is further bent, so that the pad 10 of the lead frame 102 protrudes downward. At the time of the bending process, the inner portion of the bent portion 20A of the lead frame 102 (the connecting portion 29 of the support rod 14B and the bonding pad 10 of FIG. 6) is sandwiched between the stamping die 55 and the first outer periphery of the lower punching head 53. Between the parts 53B. The surface on the main surface 100a side of the connecting portion 29 is composed of a smooth surface 30. By this bending process, the bent portion 20A of the support rod 14B of the lead frame 102 is expanded toward the inner side (the side of the pad 10). The bent portion 20A is formed. Alternatively, the lower punching head 53 may be raised to perform the above-described bending process instead of the lowering operation of the upper punching head 51. Alternatively, the upper punching head 51 is lowered, and the lower punching head 53 is raised to perform the above-described bending process.
第6圖所示之導線架102的連結部29，如第7圖所示，係成為導線架100之彎折部20的水平部21。亦即，彎折部20上的水平部21係對應於在衝壓模板55與形成下衝壓頭53的凹部53A之第1外周部53B之間所夾之部分。傾斜部23及傾斜部25分別對應於第1加工步驟及第2加工步驟中所形成之部分。 The connecting portion 29 of the lead frame 102 shown in Fig. 6 is the horizontal portion 21 of the bent portion 20 of the lead frame 100 as shown in Fig. 7. That is, the horizontal portion 21 on the bent portion 20 corresponds to a portion sandwiched between the stamping die plate 55 and the first outer peripheral portion 53B forming the recess 53A of the lower punching head 53. The inclined portion 23 and the inclined portion 25 correspond to portions formed in the first processing step and the second processing step, respectively.
如此方式，可得到如第1圖所示之具有焊墊10朝主面100b側突出之形狀之導線架100。彎曲加工時，導線架100(導線架102)係與衝壓模板55於水平部21(連結部29)的平滑面30上接觸。因此，可抑制於衝壓模板55與導線架100(導線架102)的水平部21(連結部29)之接觸面之滑動的產生。藉此可得到彎曲加工的精度經提升後之導線架100。 In this manner, the lead frame 100 having the shape in which the pad 10 protrudes toward the main surface 100b side as shown in Fig. 1 can be obtained. In the bending process, the lead frame 100 (the lead frame 102) is in contact with the stamping die plate 55 on the smooth surface 30 of the horizontal portion 21 (the connecting portion 29). Therefore, it is possible to suppress the occurrence of the sliding of the contact surface between the stamping die plate 55 and the horizontal portion 21 (the joint portion 29) of the lead frame 100 (the lead frame 102). Thereby, the lead frame 100 with improved precision of the bending process can be obtained.
第8圖係放大顯示於導線架的彎曲加工時之衝壓模板55(54)與支撐桿14(14B)之接觸面附近之剖面圖。於支撐桿14(14B)的彎曲加工時，於支撐桿14的彎折部20(20A)係產生朝下方之拉伸應力。伴隨於此，支撐桿14(14B)的水平部21(平坦部28)係於與衝壓模板55(54)之接觸面上滑動而欲朝箭頭A方向移動。本實施形態中，水平部21(平坦部28)由於在衝壓模板55(54)側具有平滑面，所以可充分地抑制於與衝壓模板55(54)之接觸面之滑動的產 生。 Fig. 8 is an enlarged cross-sectional view showing the vicinity of the contact surface of the stamping die plate 55 (54) and the support bar 14 (14B) during the bending process of the lead frame. At the time of bending of the support rod 14 (14B), a tensile stress is generated downward in the bent portion 20 (20A) of the support rod 14. Along with this, the horizontal portion 21 (flat portion 28) of the support rod 14 (14B) slides on the contact surface with the punching die plate 55 (54) to move in the direction of the arrow A. In the present embodiment, since the horizontal portion 21 (flat portion 28) has a smooth surface on the side of the press die plate 55 (54), it can sufficiently suppress the sliding of the contact surface with the stamping die plate 55 (54). Health.
第9圖係其他實施形態之導線架103之俯視圖。導線架103係該一主面103a之支撐桿14A之平滑面30及粗糙面32的位置與第1圖的導線架100不同。導線架103的其他構成係與導線架100相同，故在此省略該說明。 Fig. 9 is a plan view of the lead frame 103 of another embodiment. The position of the smooth surface 30 and the rough surface 32 of the lead frame 103 which is the support rod 14A of the one main surface 103a is different from that of the lead frame 100 of Fig. 1. The other configuration of the lead frame 103 is the same as that of the lead frame 100, and thus the description is omitted here.
如第9圖所示，導線架103係從主面103a側俯視觀看時，支撐桿14A的平滑面30較導線12的平滑面30更接近焊墊10。亦即，支撐桿14A的平滑面30較導線12的平滑面30更朝內側延伸存在，此平滑面30係形成至彎折部20為止。此導線架103係在用以使焊墊10朝與主面103a相反側突出所進行之支撐桿14的彎曲加工時，可充分地抑制支撐桿與衝壓模板之接觸面之滑動的產生。藉此可提高彎曲加工的精度，亦可進一步提升彎曲加工的穩定性。 As shown in FIG. 9, when the lead frame 103 is viewed from the side of the main surface 103a, the smooth surface 30 of the support rod 14A is closer to the pad 10 than the smooth surface 30 of the wire 12. That is, the smooth surface 30 of the support rod 14A extends more inward than the smooth surface 30 of the wire 12, and the smooth surface 30 is formed to the bent portion 20. When the lead frame 103 is used for bending the support rod 14 which is formed by projecting the bonding pad 10 toward the side opposite to the main surface 103a, the occurrence of sliding of the contact surface between the support rod and the stamping die can be sufficiently suppressed. Thereby, the precision of the bending process can be improved, and the stability of the bending process can be further improved.
支撐桿14A之平滑面30的外緣，較第2虛擬框線44更朝焊墊10側偏離。支撐桿14A之平滑面30的內緣，亦較第1虛擬框線42更朝焊墊10側偏離。亦即，支撐桿14A的平滑面30係相對於被第1虛擬框線42與第2虛擬框線44所夾之環狀區域40，朝焊墊10側(內側)偏離。此外，支撐桿14A的平滑面30係從環狀區域40之焊墊10側的部分延伸存在至彎折部20為止。支撐桿14A之平滑面30的面積係較第1圖中之支撐桿14之平滑面30的面積更小，該減少的量，使粗糙面32的面積增加。藉此可 提升支撐桿14A與密封樹脂之密著性。 The outer edge of the smooth surface 30 of the support rod 14A is offset from the second virtual frame line 44 toward the pad 10 side. The inner edge of the smooth surface 30 of the support rod 14A is also offset from the first virtual frame line 42 toward the pad 10 side. In other words, the smooth surface 30 of the support rod 14A is displaced toward the pad 10 side (inside) with respect to the annular region 40 sandwiched by the first virtual frame line 42 and the second virtual frame line 44. Further, the smooth surface 30 of the support rod 14A extends from the portion on the side of the pad 10 of the annular region 40 to the bent portion 20. The area of the smooth surface 30 of the support rod 14A is smaller than the area of the smooth surface 30 of the support rod 14 in Fig. 1, and the amount of reduction increases the area of the rough surface 32. Hereby The adhesion between the support rod 14A and the sealing resin is improved.
支撐桿14A的平滑面30係於主面103a，彎折部20的全部表面可為平滑面30，亦可彎折部20的一部分為平滑面30，其他部分為粗糙面32。從簡化平滑面30的形成之觀點來看，環狀區域40的平滑面30與彎折部20的平滑面30較佳係一體地形成。 The smooth surface 30 of the support rod 14A is attached to the main surface 103a, and the entire surface of the bent portion 20 may be the smooth surface 30, or a part of the bent portion 20 may be the smooth surface 30, and the other portion may be the rough surface 32. From the viewpoint of simplifying the formation of the smooth surface 30, the smooth surface 30 of the annular region 40 and the smooth surface 30 of the bent portion 20 are preferably integrally formed.
第10圖係另外之實施形態之導線架104之俯視圖。導線架104係導線12的前端部12A之平滑面30的面積，較第1圖的導線架100更小。導線12的前端部12A係於平滑面30的周圍具有粗糙面32。藉此可提升導線12的前端部12A之密封樹脂的密著性。導線架104的其他構成係與導線架100相同，故在此省略該說明。 Figure 10 is a plan view of a lead frame 104 of another embodiment. The area of the smooth surface 30 of the front end portion 12A of the lead frame 104-based wire 12 is smaller than that of the lead frame 100 of FIG. The front end portion 12A of the wire 12 has a rough surface 32 around the smooth surface 30. Thereby, the adhesion of the sealing resin of the front end portion 12A of the wire 12 can be improved. The other configuration of the lead frame 104 is the same as that of the lead frame 100, and thus the description is omitted here.
第11圖係再另外之實施形態之導線架102A之俯視圖。導線架102A係形成於支撐桿14B之彎折部20A的形狀與第1圖之導線架100之彎折部20的形狀不同。導線架102A例如藉由參考第6圖所說明之彎曲加工來形成。 Figure 11 is a plan view of a lead frame 102A in still another embodiment. The shape of the lead frame 102A formed on the bent portion 20A of the support rod 14B is different from the shape of the bent portion 20 of the lead frame 100 of Fig. 1 . The lead frame 102A is formed, for example, by bending processing as explained with reference to FIG.
導線架102A的彎折部20A，係由1個傾斜部所構成。第11圖中，於主面102a側，彎折部20A的表面全體成為平滑面30。惟彎折部20A的一部分或全體可為粗糙面32。如第6圖所說明般，於主面102a側，若平坦部28由平滑面30所構成，則可抑制彎曲加工時的滑動，而提升形狀的精度。導線架102A的其他構成係與導線架100相同，故在此省略該說明。 The bent portion 20A of the lead frame 102A is composed of one inclined portion. In the eleventh diagram, on the main surface 102a side, the entire surface of the bent portion 20A becomes the smooth surface 30. However, a part or the whole of the bent portion 20A may be a rough surface 32. As described in FIG. 6, when the flat portion 28 is formed of the smooth surface 30 on the main surface 102a side, the sliding during the bending process can be suppressed, and the accuracy of the shape can be improved. The other configuration of the lead frame 102A is the same as that of the lead frame 100, and thus the description is omitted here.
第12圖係一實施形態之半導體封裝體之剖 面圖。半導體封裝體300係所謂QFN封裝體，並具備焊墊暴露型式的導線架105。半導體封裝體300係具備：具有焊墊10及配置在焊墊10的周圍之導線12之導線架105、設置在焊墊10之一表面10a上之半導體晶片70、連接半導體晶片70與導線12之接合線路72、以及密封半導體晶片70及接合線路72之密封樹脂80。導線架105中的支撐桿，於彎折部中，係以使焊墊10較導線12的內導線部12x更朝主面105b側突出之方式彎折。密封樹脂80係以覆蓋導線架105之一主面105a之方式設置，並密封半導體晶片70。 Figure 12 is a cross-sectional view of a semiconductor package of an embodiment Surface map. The semiconductor package 300 is a so-called QFN package and includes a lead frame 105 of a pad exposed type. The semiconductor package 300 includes a lead frame 105 having a pad 10 and a wire 12 disposed around the pad 10, a semiconductor wafer 70 disposed on a surface 10a of the pad 10, and a semiconductor wafer 70 and a wire 12 connected thereto. The bonding line 72 and the sealing resin 80 that seals the semiconductor wafer 70 and the bonding line 72. The support rods in the lead frame 105 are bent in the bent portion so that the solder pads 10 protrude more toward the main surface 105b side than the inner lead portions 12x of the wires 12. The sealing resin 80 is provided to cover one main surface 105a of the lead frame 105, and seals the semiconductor wafer 70.
導線12之內導線部12x的表面12a，係於與接合導線72之連接部具有平滑面，於連接部以外的部分具有粗糙面。焊墊10的表面10a亦具有粗糙面。藉此可提高密封樹脂80與導線架105之密著性。另一方面，導線12之外導線部12y的表面12a可為平滑面。 The surface 12a of the lead portion 12x in the lead wire 12 has a smooth surface at the connection portion with the bonding wire 72, and has a rough surface at a portion other than the connecting portion. The surface 10a of the pad 10 also has a rough surface. Thereby, the adhesion of the sealing resin 80 to the lead frame 105 can be improved. On the other hand, the surface 12a of the lead portion 12y outside the wire 12 may be a smooth surface.
接著說明半導體封裝體300的製造方法。使用例如銀膏等之金屬膏，將半導體晶片70固定在第1圖所示之導線架100的焊墊10。接著，藉由接合導線72，將半導體晶片70的電極墊(無圖示)與導線12的內導線部12x之表面12a上的平滑面30連接。 Next, a method of manufacturing the semiconductor package 300 will be described. The semiconductor wafer 70 is fixed to the pad 10 of the lead frame 100 shown in Fig. 1 by using a metal paste such as silver paste. Next, an electrode pad (not shown) of the semiconductor wafer 70 is connected to the smooth surface 30 on the surface 12a of the inner lead portion 12x of the lead 12 by bonding the wires 72.
接著，將導線架100配置在模製模具內。然後，將樹脂組成物(例如環氧樹脂等之熱硬化性樹脂組成物)注入於模製模具內並加熱，使樹脂組成物硬化。之後，進行外導線部12y的彎曲加工，而形成外導線部12y的前端 較內導線部12x更朝主面105b側突出之導線架105。藉此可得到具備有裝載於焊墊10的表面10a之半導體晶片70、連接半導體晶片70與導線12的內導線部12x之接合線路72、以及密封此等之密封樹脂80之半導體封裝體300。 Next, the lead frame 100 is placed in a molding die. Then, a resin composition (for example, a thermosetting resin composition such as an epoxy resin) is injected into a molding die and heated to cure the resin composition. Thereafter, the outer lead portion 12y is bent to form the front end of the outer lead portion 12y. The lead frame 105 protrudes toward the main surface 105b side from the inner lead portion 12x. Thereby, the semiconductor wafer 70 having the surface 10a mounted on the pad 10, the bonding line 72 connecting the semiconductor wafer 70 and the inner lead portion 12x of the lead 12, and the semiconductor package 300 sealing the sealing resin 80 can be obtained.
上述半導體封裝體300，係使用形狀的精度優異之導線架100來形成。如此之形狀精度優異之效果，係在如半導體封裝體300般，焊墊暴露型式的導線架100時，可大幅地顯現。惟半導體封裝體300的構造並不限定於第12圖者，亦可為焊墊未暴露之型式，或是具有QFN、或DFN等之其他構造者。 The semiconductor package 300 is formed using a lead frame 100 having excellent shape accuracy. Such an effect of excellent shape accuracy can be largely exhibited when the pad is exposed to the lead frame 100 of the type like the semiconductor package 300. However, the structure of the semiconductor package 300 is not limited to the one shown in FIG. 12, and may be a pattern in which the pads are not exposed, or other structures having QFN or DFN.
以上係說明本發明之實施形態，但本發明並不限定於上述實施形態。 Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments.
10‧‧‧焊墊 10‧‧‧ solder pads
10a、12a‧‧‧表面 10a, 12a‧‧‧ surface
11‧‧‧連設部 11‧‧‧Connected Department
12‧‧‧導線 12‧‧‧ wire
12A‧‧‧前端部 12A‧‧‧ front end
12B‧‧‧基端部 12B‧‧‧ base end
14‧‧‧支撐桿 14‧‧‧Support rod
16‧‧‧連結桿 16‧‧‧ Connecting rod
17‧‧‧基端部 17‧‧‧ base end
20‧‧‧彎折部 20‧‧‧Bending
28‧‧‧平坦部 28‧‧‧ Flat section
30‧‧‧平滑面 30‧‧‧ Smooth surface
32‧‧‧粗糙面 32‧‧‧Rough surface
40‧‧‧環狀區域 40‧‧‧Circular area
42‧‧‧第1虛擬框線 42‧‧‧1st virtual frame
44‧‧‧第2虛擬框線 44‧‧‧2nd virtual frame
100‧‧‧導線架 100‧‧‧ lead frame
100a‧‧‧主面 100a‧‧‧ main face
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| TWI831943B (en) * | 2019-03-22 | 2024-02-11 | 長華科技股份有限公司 | Lead frame |
| TWI831944B (en) * | 2019-03-22 | 2024-02-11 | 長華科技股份有限公司 | Lead frame |
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| JPH03295262A (en) * | 1990-04-13 | 1991-12-26 | Mitsubishi Electric Corp | Lead frame and manufacture thereof |
| JP2000243889A (en) * | 1999-02-22 | 2000-09-08 | Sony Corp | Lead frame for semiconductor device and method and device for working its shape |
| JP3314754B2 (en) * | 1999-04-22 | 2002-08-12 | 松下電器産業株式会社 | Semiconductor device having lead-free tin-based solder film and method of manufacturing the same |
| JP3841768B2 (en) * | 2003-05-22 | 2006-11-01 | 新光電気工業株式会社 | Package parts and semiconductor packages |
| US7049683B1 (en) * | 2003-07-19 | 2006-05-23 | Ns Electronics Bangkok (1993) Ltd. | Semiconductor package including organo-metallic coating formed on surface of leadframe roughened using chemical etchant to prevent separation between leadframe and molding compound |
| US7838339B2 (en) * | 2008-04-04 | 2010-11-23 | Gem Services, Inc. | Semiconductor device package having features formed by stamping |
| KR101113891B1 (en) * | 2009-10-01 | 2012-02-29 | 삼성테크윈 주식회사 | Lead frame and method of manufacturing lead frame |
| JP5669495B2 (en) * | 2010-09-17 | 2015-02-12 | 株式会社大貫工業所 | Resin-encapsulated metal component, lead frame used therefor, and method of manufacturing metal component |
| JP2014007363A (en) * | 2012-06-27 | 2014-01-16 | Renesas Electronics Corp | Method of manufacturing semiconductor device and semiconductor device |
| JP2014093452A (en) * | 2012-11-05 | 2014-05-19 | Hitachi Cable Ltd | Punching die, lead frame, and method of manufacturing lead frame |
| JP6093646B2 (en) * | 2013-05-14 | 2017-03-08 | 新光電気工業株式会社 | Manufacturing method of plating film |
-
2016
- 2016-02-17 JP JP2016028068A patent/JP6621681B2/en active Active
-
2017
- 2017-02-14 CN CN201710078784.3A patent/CN107093594B/en active Active
- 2017-02-15 MY MYPI2017700493A patent/MY192355A/en unknown
- 2017-02-16 TW TW106105053A patent/TWI642146B/en active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI831943B (en) * | 2019-03-22 | 2024-02-11 | 長華科技股份有限公司 | Lead frame |
| TWI831944B (en) * | 2019-03-22 | 2024-02-11 | 長華科技股份有限公司 | Lead frame |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107093594A (en) | 2017-08-25 |
| JP6621681B2 (en) | 2019-12-18 |
| CN107093594B (en) | 2019-05-03 |
| TWI642146B (en) | 2018-11-21 |
| JP2017147332A (en) | 2017-08-24 |
| MY192355A (en) | 2022-08-17 |
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