CN107093594A - Lead frame and its manufacture method and semiconductor packages - Google Patents
Lead frame and its manufacture method and semiconductor packages Download PDFInfo
- Publication number
- CN107093594A CN107093594A CN201710078784.3A CN201710078784A CN107093594A CN 107093594 A CN107093594 A CN 107093594A CN 201710078784 A CN201710078784 A CN 201710078784A CN 107093594 A CN107093594 A CN 107093594A
- Authority
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- China
- Prior art keywords
- lead frame
- pad
- lead
- even surface
- support bar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 239000004065 semiconductor Substances 0.000 title claims description 37
- 238000005452 bending Methods 0.000 claims description 99
- 238000007747 plating Methods 0.000 claims description 34
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 30
- 229920005989 resin Polymers 0.000 claims description 25
- 239000011347 resin Substances 0.000 claims description 25
- 238000007789 sealing Methods 0.000 claims description 22
- 238000007788 roughening Methods 0.000 claims description 19
- 229960004643 cupric oxide Drugs 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- 238000004381 surface treatment Methods 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims description 3
- 238000003754 machining Methods 0.000 description 40
- 239000002585 base Substances 0.000 description 31
- 230000006978 adaptation Effects 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 241001442589 Convoluta Species 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229940112669 cuprous oxide Drugs 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006253 efflorescence Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 206010037844 rash Diseases 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4842—Mechanical treatment, e.g. punching, cutting, deforming, cold welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/49524—Additional leads the additional leads being a tape carrier or flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
- H01L23/49555—Cross section geometry characterised by bent parts the bent parts being the outer leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
The present invention provides a kind of lead frame (100), its lead (12), support bar (14) of supporting pad (10) for possessing pad (10), being configured at around pad (10), wherein, support bar (14) and lead (12) have mat surface (32) and even surface (30) respectively, in an interarea (100a) side, even surface (30) closer pad (10) of the even surface (30) than lead (12) of support bar (14).
Description
Technical field
The present invention relates to lead frame and its manufacture method and semiconductor packages.
Background technology
Semiconductor packages possesses lead frame (lead frame), carries semiconductor chip thereon and seal and partly lead
The sealing resin of body chip.In the manufacture of semiconductor packages, by the semiconductor chip thermosetting of lead frame and carrying thereon
Property resin covering, it is heated and solidifies it.In order to ensure the reliability of semiconductor packages, it is known to by the surface of lead frame
Roughening, improves the technology of the adaptation of lead frame and sealing resin.
In patent document 1 (Japanese Patent Publication 3-295262 publications), in order to improve adaptation, motion, which has, to draw
Wire frame is impregnated in aqueous slkali of oxidisability etc., is carried out anodic oxidation to the copper of leadframe surfaces, is formed the oxide film thereon of needle-like
Method.Record and formed slightly on the surface of lead frame in patent document 2 (Japanese Patent Publication 2014-221941 publications)
The method of roughening plating layer.So, the surface roughening by lead frame is improved by anchoring effect (anchor effect)
Inquired into the mode of the adaptation of sealing resin.
In the case of the manufacture pad lead frame different with the height and position of lead, the support bar for supporting pad is carried out
Bending machining.The bending machining compresses support bar by one side using ingot stripper, while being pressed it and being carried out with drift.
According to the research of the present inventor etc., in the technology of patent document 1,2, when carrying out bending machining, carried out sometimes because of drift
Press and produce the phenomenon that the compression of ingot stripper progress is slided, this is likely to become the further precision for improving bending machining
Obstacle.
The content of the invention
Therefore, in the present invention, the purpose of one side is that there is provided a kind of excellent lead frame of precision of shape.This hair
The purpose of bright other side is that there is provided the semiconductor packages for possessing this lead frame.The purpose of another aspect of the present invention
It is that there is provided a kind of manufacture method of the lead frame for the precision that can improve bending machining.
One aspect of the present invention provides a kind of lead frame, it possess pad, the lead being configured at around pad and
The support bar of pad is supported, wherein, support bar and lead have mat surface and even surface, in an interarea side, support bar respectively
Even surface than lead even surface closer to pad.
According to described lead frame, support bar is being compressed while being pressed and being carried out using drift using ingot stripper
During bending machining, it can suppress to compress the phenomenon for producing and sliding.Thereby, it is possible to the lead frame that the precision that shape is made is excellent.Obtain
The reasons why obtaining this effect speculates as follows.
Because the mat surface of lead frame has crystallization of needle-like etc., therefore, when compressing mat surface with ingot stripper, crystallization etc.
It is crushed and efflorescence, it is considered that this turns into the principal element slided.On the other hand, in the lead frame of an aspect of of the present present invention,
Because even surface of the even surface than lead of support bar is closer to pad, therefore bending machining is being carried out by bond pad with drift
When, ingot stripper can be made to be contacted with the even surface of support bar.Therefore, with the situation phase of ingot stripper and the asperity contact of support bar
Than, it is believed that slide and be suppressed.In addition, can also reduce the powder produced by the crushing of acicular crystal etc..
Preferably, the support bar has to make pad more curved than what the lead more mode prominent to another interarea side was bent
Pars convoluta, in an interarea side, support bar has even surface in the flat part adjacent with the outside of bending section.Thereby, it is possible to fully suppression
The slip of ingot stripper during bending machining processed.Thereby, it is possible to the precision for the shape for fully improving lead frame.
Preferably, the bending section of the support bar is with parallel with the long side direction of support bar and vertical with an interarea
When section is observed, with horizontal part and the rake for clipping the horizontal part, in an interarea side, support bar has in horizontal part
Even surface.Such bending section is formed in the case where carrying out the bending machining more than repeatedly.Even having carried out multiple bending
The lead frame of processing, the slip of ingot stripper when can also suppress each bending machining, therefore, it is possible to fully improve the essence of shape
Degree.
Preferably, the even surface is made up of plating silverskin.The levelability for plating silverskin is excellent, with high flatness.Cause
This, can further suppress slip during bending machining, can further improve the precision of the shape of lead frame.
Preferably, compared with the first imaginary wire that the inner edge of the even surface of mutually adjacent lead is connected to each other,
The inner edge of the even surface of support bar more extends to land side.Thereby, it is possible to fully suppress the slip of ingot stripper during bending machining,
Fully improve the precision of the shape of lead frame.
Preferably, relative to by by the inner edge of the mutually even surface of adjacent lead the first imaginary frame connected to each other
Line and by the annular section clamped by the outer rim of the even surface of adjacent lead the second imaginary wire connected to each other, support bar
Even surface deviation land side.By the way that the position relationship of lead and the even surface of support bar is set to as above, even if making branch
The even surface of strut is extended near outer rim, the slip of ingot stripper when can also suppress bending machining.And then, due to that can subtract
The area of the even surface of small support bar, therefore, it is possible to fully improve the adaptation with sealing resin, and improves the precision of shape.
The mat surface can also be made up of cupric oxide envelope or roughening plating envelope.Thereby, it is possible to be filled with low cost
Divide the adaptation improved with sealing resin.
Another aspect of the present invention provides a kind of semiconductor packages, and it possesses：The lead frame, the master in lead frame
Surface side be located at pad surface on semiconductor chip, by the sealed sealing resin of semiconductor chip, in another master of lead frame
Surface side, sealing resin is set in the way of the surface of pad is exposed.
The lead frame that the semiconductor packages of that above-mentioned pad exposed type possesses, adds even if implementing bending to support bar
Work, the precision of shape is also excellent.
Another aspect of the present invention provides a kind of manufacture method of lead frame, and lead frame possesses pad, is configured at pad
The lead of surrounding and the support bar for supporting pad, the manufacture method of lead frame have：Surface treatment procedure, in lead frame base
One interarea side of material, mat surface and even surface are formed on support bar and lead respectively；First manufacturing procedure, while utilizing the demoulding
Machine compresses the even surface of support bar, while pressing bond pad using drift, support rod bending is formed into bending section, draws pad ratio
Line is more prominent to another interarea side.
In the manufacture method, utilize ingot stripper compress support bar mat surface and even surface in even surface while
Bond pad is pressed using drift, rod bending will be supported, make pad more prominent more to another interarea side than lead.Therefore, it is possible to suppress
The phenomenon for producing and sliding is compressed on the contact surface of ingot stripper and support bar.Thereby, it is possible to improve the precision of bending machining.In addition,
Stability during bending machining also can be improved further.
The manufacture method can also have the second manufacturing procedure, more be leaned on than the bending section while being compressed using ingot stripper
The even surface of land side, while expanding the bending section by bond pad using drift, further makes pad than lead more to another
One interarea side is protruded.In this case, can suppress to compress the phenomenon for producing and sliding on the contact surface of ingot stripper and support bar.By
This, it is possible to increase the precision of bending machining.In addition, stability during bending machining also can be improved further.
In the surface treatment procedure of the manufacture method, copper facing can also be passed through by silver-plated process formation even surface
Processing or the processing of roughening plating form mat surface.Thereby, it is possible to manufacture on the contact surface for fully suppressing ingot stripper and support bar
Slip, the adaptation also excellent lead frame of low cost and sealing resin.
In the present invention, in an aspect, using the teaching of the invention it is possible to provide the excellent lead frame of the precision of shape.The present invention is in another side
In face, using the teaching of the invention it is possible to provide possess the semiconductor packages of this lead frame.The present invention is in a further aspect, using the teaching of the invention it is possible to provide can improve curved
The manufacture method of the lead frame of Qu Jiagong precision.
Brief description of the drawings
Fig. 1 is the top view of the lead frame of an embodiment.
Fig. 2 is Fig. 1 II-II line sectional views.
Fig. 3 (A), (B), (C) and (D) is the method for illustrating to form even surface and mat surface on lead frame base material
The figure of one.
Fig. 4 (A), (B) and (C) is for the another of the method that illustrates to form even surface and mat surface on lead frame base material
The figure of one.
Fig. 5 (A), (B), (C) and (D) is the deformation for illustrating the method for explanation in Fig. 4 (A), (B) and (C)
The figure of example.
Fig. 6 is the figure for illustrating the first manufacturing procedure.
Fig. 7 is the figure for illustrating the second manufacturing procedure.
Fig. 8 is by section of enlarged representation near the ingot stripper and the contact surface of support bar during the bending machining for carrying out lead frame
Face figure.
Fig. 9 is the top view of the lead frame of another embodiment.
Figure 10 is the top view of the lead frame of further embodiment.
Figure 11 is the top view of the lead frame of yet another embodiment.
Figure 12 is the sectional view of the semiconductor packages of an embodiment.
Embodiment
Hereinafter, according to circumstances, embodiments of the present invention are illustrated referring to the drawings.But, following embodiment
It is that, for the illustration that the present invention will be described, its purport is not to limit the invention to following content.It is same in explanation
Key element or key element with same function use same reference, according to circumstances and the repetitive description thereof will be omitted.In addition, upper bottom left
It is right to wait position relationship unless otherwise specified, then for based on position relationship shown in the drawings.Further, the size ratio of accompanying drawing
Rate is not limited to the ratio of diagram.
Fig. 1 is the top view of the lead frame 100 of present embodiment.Lead frame 100 possess centrally located part pad 10,
It is configured at a plurality of leads 12 around pad 10, supports four support bars 14 of pad 10.The front end of support bar 14 is in pad
The portion 11 that is connected with 10 corner is connected with, and the cardinal extremity of support bar 14 is connected with the tie-rod 16 being configured at around lead 12.Support bar 14
Extended radially from the corner of the pad 10 of substantially rectangular shape, by being connected with tie-rod 16, support pad 10.
Lead frame 100 carries semiconductor chip in an interarea 100a sides on pad 10.Relative to pad 10 each side simultaneously
Deploying is provided with six leads 12, and its leading section 12A is opposed with each side of pad 10 across defined interval.Lead 12 is in interarea
100a sides, have even surface 30 in leading section 12A sides, have mat surface 32 in base end part 12B sides.
Support bar 14 in interarea 100a sides, positioned at the bending section 20 being connected near portion 11 of pad 10 and and bending section
20 adjacent flat parts 28 have even surface 30, have mat surface 32 in the portion that is connected with 11 and base end part 17.Bending section 20 is, for example,
Bending machining portion.Mat surface 32 contains acicular crystal.On the other hand, even surface 30 is more smooth than mat surface 32, without acicular crystal.
In Fig. 1, the surface 10a of pad 10 is made up of mat surface 32, but the ground connection engagement in order to carry out semiconductor chip etc.
Wire bonding, a surface 10a part can also have the even surface 30 being made up of silver-plated envelope etc..In addition, mat surface 32
Only it can be formed in the region by sealing resin sealedly than tie-rod 16 in the inner part.
From the viewpoint of reduction manufacturing cost and the adaptation of raising and sealing resin, mat surface 32 can also be by aoxidizing
Copper envelope or roughening plating envelope are constituted.Go out from the viewpoint of the slip on the abundant contact surface for suppressing support bar 14 with ingot stripper
Hair, even surface 30 can also be made up of silver-plated envelope.
As shown in figure 1, lead frame 100 is when from an interarea 100a side top view, the ratio of even surface 30 of support bar 14 draws
The even surface 30 of line 12 is closer to pad 10.That is, the even surface 30 of support bar 14 more prolongs than the even surface 30 of lead 12 to inner side
Stretch.Such lead frame 100 carry out in order that the opposite side of from pad 10 to interarea 100a is prominents and the support bar 14 of progress
During bending machining, it can fully suppress support bar 14 and the generation of the slip on the contact surface of ingot stripper.Therefore, lead frame 100
Shape precision it is excellent.
On lead frame 100, by by the inner edge (edge of the side of pad 10) of the mutually even surface 30 of adjacent lead 12 each other
The first imaginary wire 42 for the linking and outer rim (edge of the side of tie-rod 16) of the even surface of mutually adjacent lead 12 is connected to each other
The region that clamps of the second imaginary wire 44 as shown in figure 1, in substantially a ring-shaped.Hereinafter, the region is referred to as annular section 40.
First imaginary wire 42 is by four straight lines for linking the inner edge of the even surface 30 of mutually adjacent lead 12 and general
The straight line is constituted with the intersection point of the lateral margin of support bar 14 four straight lines connected to each other.Second imaginary wire 44 will be mutually adjacent by inciting somebody to action
Lead 12 even surface 30 four linear imaginary lines linking of outer rim and by the lateral margin of the straight line and support bar 14
Intersection point four linear imaginary lines connected to each other are constituted.The second imaginary imaginary wire 42 of wire 44 to the first is big, and first is false
Think that wire 42 is contained in the second imaginary wire 44.Therefore, annular section 40 is formed by both.First imaginary wire 42 and the
Two imaginary wires 44 can also be similar figures.
The outer rim of the even surface 30 of support bar 14 is consistent with the second imaginary wire 44.In contrast, support bar 14 is smooth
The inner edge in face 30 more extends than annular section 40 to the side of pad 10.So, support bar 14 is in the vicinity of pad 10, even surface 30
Area increases.Support bar 14 during thereby, it is possible to fully increase bending machining and the even surface 30 on the contact surface of ingot stripper
Area or area ratio.Therefore, it is possible to further suppress slip during bending machining.
It is located at being connected between the imaginary wire 42 in portion 11 and first for support bar 14 and pad 10 and (includes first in bending section 20
In imaginary wire 42).Even surface 30 is formed at least one of region comprising bending section 20 from the second imaginary wire 44.But
It is, the region not limited to this of even surface 30 that can also be integrally formed throughout bending section 20, can also extend on interarea 100a
It is connected with portion 11.
Fig. 2 is Fig. 1 II-II line sectional views.That is, be with it is parallel with the long side direction of support bar 14 and with interarea 100a
Sectional view when vertical face is cut off.Support bar 14 has base end part 17 and relative to lead 12 so that pad 10 is to interarea
The bending section 20 that the mode that 100b sides are protruded is bent.Support bar 14 in interarea 100a sides, bending section 20 a part and with it is curved
The flat part 28 that the outside of pars convoluta 20 is adjacent has even surface 30.That is, region of the support bar 14 in the interarea 100a sides shown in Fig. 2
P has even surface 30.On the other hand, region of the support bar 14 beyond the region P of the interarea 100a sides shown in Fig. 2 has coarse
Face 32.
The surface 10a of pad 10 is made up of mat surface 32.The table of the pads 10 of interarea 100b sides, support bar 14 and lead 12
Face is also made up of mat surface 32.But, lead frame 100 be pad exposed type in the case of, the preferably surface 10b of pad 10 by
Even surface 30 is constituted.
Bending section 20 has horizontal part 21 and clips the rake 23,25 of horizontal part 21.In the sectional view shown in Fig. 2,
Horizontal part 21 is parallel with pad 10.On the other hand, rake 23,25 is in the sectional view shown in Fig. 2, relative to horizontal part 21 and
Pad 10 is tilted.In Fig. 2, rake 23,25 is tilted downwards towards pad 10.Thus, pad 10 is dashed forward downwards in fig. 2
Go out.
It is preferred that in bending section 20, at least horizontal part 21 has even surface 30.Thereby, it is possible to fully suppress ingot stripper and branch
The generation of slip on the contact surface of strut 14.Rake 23,25 can also be any one in even surface 30 and mat surface 32,
But if the rake 23 in outside is even surface 30, then it can be integrally formed in flat part 28, rake 23 and horizontal part 21
Even surface 30.
The bending section 20 of support bar 14 on the lead frame 100 of present embodiment has a horizontal part 21 and clipped respectively
The rake 23,25 of the horizontal part, but the invention is not restricted to this.The bending section of other several embodiments can also not had
Horizontal part 21 and the bending section that is made up of a rake or connect with more than two horizontal parts and by each horizontal part
The bending section of the rake of knot.
Illustrate one of the manufacture method of lead frame 100 example below.The manufacture method has：Preparatory process, by as
The metallic plate of the banding of mother metal is etched or punching press (stamping), is formed with pad, is configured at drawing around pad
The flat lead frame base material of line, the support bar of supporting pad；Surface treatment procedure, on an interarea of lead frame base material,
Mat surface and even surface are formed respectively on support bar and lead；First manufacturing procedure, while compressing support bar using ingot stripper
Even surface, while using drift press bond pad, will support rod bending and form bending section, make pad than lead more to lead frame
Another interarea side of base material is protruded；Second manufacturing procedure, while being compressed than above-mentioned bending section 20 more in the inner part using ingot stripper
Even surface 30, while expanding bending section by bond pad using drift, further makes pad than lead more to another interarea pleurapophysis
Go out.
The lead frame base material formed in preparatory process is in addition to for tabular, also with the shape equal with lead frame 100.
For lead frame base material formation mat surface and even surface.Fig. 3 is the one of the method that explanation forms even surface 30 and mat surface 32
The figure of example.As shown in Fig. 3 (A), in an interarea 101a sides of lead frame base material 101, set in the part as mat surface 32
Mask 34.Then, silver-plated process is implemented to lead frame base material 101, shown in such as Fig. 3 (B), is not forming the specified part of mask 34
Divide the silver-plated envelope 31 for being formed and constituting even surface 30.
Silver-plated envelope 31 can be by the way that after established part formation mask 34, progress have used D/C power or pulse power etc.
Electrolysis plating processing and formed.Thereby, it is possible to form silver-plated envelope 31 in established part.As for being electrolysed plating processing
Plating solution, for example, can enumerate cyaniding silver plating solution.
Formed after silver-plated envelope 31, such as shown in Fig. 3 (C), remove mask 34.Afterwards, oxidation processes are implemented, such as Fig. 3
(D) shown in, the cupric oxide envelope 33 for constituting mat surface 32 is formed in the part for not forming silver-plated envelope 31.If with such suitable
Sequence is carried out, then can form cupric oxide envelope 33 without sheltering, therefore, it is possible to simplify process.In addition, cupric oxide envelope 33
And the thickness of silver-plated envelope 31 is not particularly limited.
Cupric oxide envelope 33 can be by the way that the lead frame base material 101 for being formed with silver-plated envelope to be immersed in the alkali of strong oxidizing property
In solution, the anode-side of rectifier is connected with lead frame base material, cathode side is connected with the battery lead plate being configured in solution tank,
Carry out anodic oxidation and formed.The cupric oxide envelope so formed contains cuprous oxide (Cu2O) and cupric oxide (CuO), can also
Without layer construction.
The surface of cupric oxide envelope 33 is the state for being densely formed with acicular crystal.Thereby, it is possible to fully improve with it is close
Seal the adaptation of resin.In addition, the forming method of mat surface 32 and even surface 30 is not limited to above-mentioned method.For example, it is also possible to
Before silver-plated envelope 31 is formed, using bending section 20 and the part of flat part 28 as support bar 14 as the state of mask, press
Above-mentioned sequentially forms cupric oxide envelope 33.Afterwards, mask is removed, silver-plated process is carried out, silver-plated envelope 31 is formed.Thus, energy
Enough it regard the part for being formed with cupric oxide envelope 33 as the part sheltered as mat surface 32 as even surface 30.
Mat surface 32 can not also be made up of cupric oxide envelope 33, and be made up of roughening plating envelope.It is roughened plating
Envelope can be copper facing envelope or plating nickel flashing.Roughening plating envelope can also be plating nickel flashing in order
Envelope with plating palladium envelope and gold-plated envelope.In this case, mat surface 32 is made up of gold-plated envelope.
Fig. 4 is the figure of another of the method that explanation forms even surface 30 and mat surface 32.As shown in Fig. 4 (A), drawing
The interarea 101a sides of wire frame base material 101, mask 34 is set in the part as even surface 30.Afterwards, carry out at roughening plating
Reason, shown in such as Fig. 4 (B), forms the roughening plating envelope 33A with acicular crystal.It is roughened the formation side of plating envelope
Method is different according to the species of plating solution.For example, if plating nickel flashing, then carry out plating processing by dc source.If
Copper facing envelope is roughened, then carries out plating processing using polarity inversion power supply.Afterwards, mask 34 is removed, silver-plated process is carried out, such as
Shown in Fig. 4 (C), the silver-plated envelope 31 for constituting even surface 30 is formed.In addition, roughening plating envelope 33A and silver-plated envelope 31
Thickness be not particularly limited.
Fig. 5 is the figure for the variation for illustrating Fig. 4.In the case where roughening plating envelope 33A is roughening copper facing envelope,
Even surface 30 and mat surface 32 can also be sequentially formed according to following.As shown in Fig. 5 (A), in the master of lead frame base material 101
Face 101a sides form roughening copper facing envelope 33A.As shown in Fig. 5 (B), mask 34 is set in the part as mat surface 32.
Moreover, as shown in Fig. 5 (C), silver-plated process is carried out, in the part as even surface 30, to cover roughening copper facing envelope 33A
Mode form silver-plated envelope 31.When forming silver-plated envelope 31, even if substrate is roughening plating envelope 33A, due to silver-plated
The good leveling property of envelope 31, and also there is thickness, therefore the surface of silver-plated envelope 31 can also turn into even surface 30.If removing is covered
Mould 34, then as shown in Fig. 5 (D), acquisition has the lead frame base material of even surface 30 and mat surface 32 in an interarea 101a sides
101.Same or similar processing can also be carried out in another interarea side, form even surface 30 and mat surface 32.
In the semiconductor package of the surface 10b of the pad 10 Exposed-Pad types (pad exposed type) exposed from sealing resin
Dress or lead 12 surface from sealing resin expose and as outside terminal QFN encapsulation in, if improve lead frame base material
The ratio of the mat surface 32 of a 101 interarea 101a sides, then can improve the adaptation with sealing resin.
On the other hand, the part preferably even surface exposed from sealing resin in another interarea of lead frame base material 101
30.By configuring the battery lead plate being connected with polarity inversion power supply in an interarea 101a sides of lead frame base material 101, in another interarea
The battery lead plate that side configuration is connected with the pulse power, and copper plating treatment is carried out simultaneously to two interareas, can be in an interarea 101a sides shape
Into mat surface 32, even surface 30 is formed in another interarea side.
It is not required to constitute even surface 30 and mat surface 32 by plating envelope or cupric oxide envelope, or other quilts
Film, or the structure that the surface of lead frame base material is directly exposed.In this case, surface by sheltering lead frame base material
A part, in other parts formation envelope, results in the lead frame for having even surface 30 and mat surface 32 in interarea 101a sides
Base material 101.Alternatively, it is also possible to form silver-plated envelope, roughening plating envelope, cupric oxide on the interarea of lead frame base material 101
Before envelope etc., for example, smooth copper facing envelope is formed as substrate plating.
Fig. 6 is the figure for illustrating the first manufacturing procedure.The lead frame base material of even surface 30 and mat surface 32 will be formed with
101 are configured between upper punch 50 and low punch 52 as shown in Figure 6.Low punch 52 is formed with the shape phase with upper punch 50
The recess 52A of auxiliary shape.Upper punch 50 presses lead frame base material 101 downwards on one side while the recess of insertion low punch 52
52A.Now, lead frame base material 101 configures the shape of ingot stripper 54 and low punch 52 around upper punch 50 by being held on
Fixed between recess 52A peripheral part 52B.
With the decline of upper punch 50, support bar 14B bendings, the pad 10 of lead frame base material 101 is protruded downwards, by by
It is pressed on the recess 52A of low punch 52 bottom.By such bending machining, bending section 20A is formed on support bar 14B.This
Outside, rise instead of the decline or low punch 52 of upper punch 50 and carry out above-mentioned bending machining.Alternatively, it is also possible to be
Upper punch 50 declines, and low punch 52 rises and carries out above-mentioned bending machining.
So, the lead frame 102 for the shape that surface 10b sides are projected into pad 10 is obtained.The shape of lead frame 102 is removed
It is identical with lead frame 100 outside the 20A of bending section.That is, the bending section 20A of lead frame 102 does not have horizontal part, and by an inclination
Portion is constituted.
As shown in fig. 6, when carrying out bending machining, lead frame 102 (lead frame base material 101) is outer with bending section 20A
The even surface 30 of the adjacent flat part 28 in side is contacted with ingot stripper 54.(draw with lead frame 102 therefore, it is possible to suppress ingot stripper 54
Wire frame base material 101) flat part 28 contact surface on slip generation.Thereby, it is possible to obtain the essence for improving bending machining
The lead frame 102 of degree.
Fig. 7 is the figure for illustrating the second manufacturing procedure.The lead frame 102 obtained in first manufacturing procedure is configured at
Between drift 51 and low punch 53.Low punch 53 possesses with the recess 53A with the shape complementary shapes of upper punch 51, upper punching
First 51 press lead frame 102 while inserting recess 53A.Now, lead frame 102 is by being held on configuration in upper punch 51
It is fixed between the ingot stripper 55 of surrounding and the formation recess 53A of low punch 53 the first peripheral part 53B.Flat part 28
Abutted with the second peripheral part 53C being arranged at around the first peripheral part 53B.
The upper punch 51 used in second manufacturing procedure has the upper punch 50 of Fig. 6 than being used in the first manufacturing procedure small
The lower surface of one circle.The recess 53A of the low punch 53 used in second manufacturing procedure is with Fig. 6's than being used in the first process
The bottom surface of the small circles of recess 52A of low punch 52.
With the decline of upper punch 51, support bar 14 is further bent, and the pad 10 of lead frame 102 is further dashed forward downwards
Go out.When carrying out the bending machining, part (Fig. 6 support bar 14B and the weldering than bending section 20A more in the inner part of lead frame 102
The linking part 29 of disk 10) it is held between ingot stripper 55 and the first peripheral part 53B of low punch 53.The interarea of linking part 29
The surface of 100a sides is made up of even surface 30.By the bending machining, the support bar 14B of lead frame 102 bending section 20A is inside
Side (side of pad 10) is expanded, and forms bending section 20.In addition, rise instead of the decline or low punch 53 of upper punch 51 and
Carry out above-mentioned bending machining.Alternatively, it is also possible to be that upper punch 51 declines, and low punch 53 rises and carries out above-mentioned bending
Processing.
As shown in fig. 7, the linking part 29 of the lead frame 102 shown in Fig. 6 turns into the horizontal part of the bending section 20 of lead frame 100
21.That is, first peripheral part that forms recess 53A of the horizontal part 21 of bending section 20 with being held on ingot stripper 55 and low punch 53
Part between 53B is corresponding.Rake 23 and rake 25 in the first manufacturing procedure and the second manufacturing procedure respectively with forming
Part it is corresponding.
So, lead frame 100 shown in Fig. 1, with the further shape prominent to interarea 100b sides of pad 10 is obtained.
When carrying out bending machining, even surface 30 and ingot stripper 55 of the lead frame 100 (lead frame 102) in horizontal part 21 (linking part 29)
Contact.Therefore, it is possible to suppress the contact surface of ingot stripper 55 and the horizontal part 21 (linking part 29) of lead frame 100 (lead frame 102)
On slip generation.Thereby, it is possible to obtain the lead frame 100 for the precision for improving bending machining.
Fig. 8 is that the contact surface of ingot stripper 55 (54) and support bar 14 (14B) during the bending machining for carrying out lead frame is attached
The sectional view of nearly enlarged representation.When being supported the bending machining of bar 14 (14B), in the bending section 20 (20A) of support bar 14
Produce tensile stress downwards.Therewith, the horizontal part 21 (flat part 28) of support bar 14 (14B) will with ingot stripper 55 (54)
Contact surface on slide, to arrow A directions move.In present embodiment, because horizontal part 21 (flat part 28) is in ingot stripper 55
(54) side has even surface, therefore, it is possible to fully suppress the generation of the slip on the contact surface with ingot stripper 55 (54).
Fig. 9 is the top view of the lead frame 103 of another embodiment.Support on one interarea 103a of lead frame 103
Bar 14A even surface 30 and the position of mat surface 32 are different from Fig. 1 lead frame 100.The other structures and lead of lead frame 103
Frame 100 is identical, therefore, in this description will be omitted.
As shown in figure 9, when lead frame 103 carries out top view from interarea 103a sides, the support bar 14A ratio of even surface 30 draws
The even surface 30 of line 12 is closer to pad 10.That is, support bar 14A even surface 30 more prolongs than the even surface 30 of lead 12 to inner side
Stretch, the even surface 30 is formed to bending section 20.Such lead frame 103 is being carried out in order that pad 10 is to the opposite of interarea 103a
During the bending machining for the support bar 14 that side protrudes and carried out, it can fully suppress the slip on the contact surface of support bar and ingot stripper
Generation.Thus, the precision of bending machining is improved, and the stability of bending machining also can be improved further.
The outer rim of support bar 14A even surface 30 wire 44 more imaginary than second is more biased towards the side of pad 10.Support bar 14A's is flat
Also wire 42 more imaginary than first is more biased towards the side of pad 10 for the inner edge of sliding surface 30.That is, support bar 14A even surface 30 is relative to by
The deviation of annular section 40 side of pad 10 (inner side) that the one imaginary imaginary wire 44 of wire 42 and second is clamped.Moreover, support bar 14A
Even surface 30 extend partially into bending section 20 from the side of pad 10 of annular section 40.The face of support bar 14A even surface 30
The area of the even surface 30 of support bar 14 of the product than Fig. 1 is small, correspondingly, the area increase of mat surface 32.Thereby, it is possible to improve branch
Strut 14A and sealing resin adaptation.
Support bar 14A even surface 30 is on interarea 100a, and the full surface that can be bending section 20 is even surface 30, also may be used
Using be bending section 20 a part as even surface 30, other parts be mat surface 32.From the sight for the formation simplification for making even surface 30
Point is set out, and preferably the even surface 30 of annular section 40 and the even surface 30 of bending section 20 are integrally formed.
Figure 10 is the top view of the lead frame 104 of further embodiment.The lead frame 104 and Fig. 1 phase of lead frame 100
Than the area of the leading section 12A of lead 12 even surface 30 is small.The leading section 12A of lead 12 has around even surface 30
Mat surface 32.The adaptation of the sealing resin on the 12A of leading section thereby, it is possible to improve lead 12.Other knots of lead frame 104
Structure is identical with lead frame 100, therefore, in this description will be omitted.
Figure 11 is the lead frame 102A of yet another embodiment top view.Lead frame 102A's is formed at support bar 14B
Bending section 20A shape it is different from the shape of the bending section 20 of Fig. 1 lead frame 100.Lead frame 102A for example by referring to
Bending machining that Fig. 6 illustrates and formed.
Lead frame 102A bending section 20A is made up of a rake.In Figure 11, in interarea 102a sides, bending section 20A's
Whole surface turns into even surface 30.But, bending section 20A a part or entirety can also be mat surfaces 32.As described in Fig. 6
Bright, if in interarea 102a sides, flat part 28 is made up of even surface 30, then can suppress slip during bending machining, improves shape
The precision of shape.Lead frame 102A other structures are identical with lead frame 100, therefore, in this description will be omitted.
Figure 12 is the sectional view of the semiconductor packages of an embodiment.Semiconductor packages 300 is so-called QFP encapsulation,
Possesses the lead frame 105 of pad exposed type.Semiconductor packages 300 possesses：With pad 10 and it is configured at drawing around pad 10
The lead frame 105 of line 12, the semiconductor chip 70 being arranged on a surface 10a of pad 10, by semiconductor chip 70 and lead
The closing lines 72 of 12 connections, by semiconductor chip 70 and the sealed sealing resin 80 of closing line 72.The support bar of lead frame 105 exists
Bending section is to make pad 10 be bent than the inner lead part 12x more modes prominent to interarea 105b sides of lead 12.Sealing resin 80
To be set in the way of the interarea 105a for covering lead frame 105, semiconductor chip 70 is sealed.
The inner lead part 12x of lead 12 surface 12a has even surface in the connecting portion with closing line 72, connecting portion with
Outer part has mat surface.The surface 10a of pad 10 also has mat surface.Thereby, it is possible to improve sealing resin 80 and lead
The adaptation of frame 105.On the other hand, the outer lead part 12y of lead 12 surface 12a can also be even surface.
Secondly, the manufacture method to semiconductor packages 300 is illustrated.In the pad 10 of the lead frame 100 shown in Fig. 1
On, semiconductor chip 70 is fixed using the metal paste such as silver paste.Secondly, using closing line 72 by the electricity of semiconductor chip 70
The inner lead part 12x of pole pad (not shown) and lead 12 surface 12a even surface 30 is connected.
Then, lead frame 100 is configured in molding die.And then, by resin combination (for example, the heat such as epoxy resin
Thermosetting resin composition) heated in injection molding mould, make resin composition.Afterwards, carry out outer lead part 12y's
Bending machining, forms outer lead part 12y front end than the inner lead part 12x more lead frames 105 prominent to interarea 105b sides.By
This, obtains the semiconductor chip 70 for possessing the surface 10a for being equipped on pad 10, the lead by semiconductor chip 70 and lead 12
The closing line 72 of portion 12x connections and the semiconductor packages 300 by their sealed sealing resins 80.
Above-mentioned semiconductor packages 300 is formed using the excellent lead frame 100 of the precision of shape.The precision of so shape is excellent
Different this effect particularly obviously embodies as semiconductor packages 300 in the case of the lead frame 100 of pad exposed type
Out.But, the construction of semiconductor packages 300 is not limited to the type that Figure 12 construction or pad do not expose, can also
It is the type with other constructions such as QFN or DFN.
More than, embodiments of the present invention are illustrated, but the present invention is not by any restriction of above-mentioned embodiment.
Claims (12)
1. a kind of lead frame, it possesses the support of pad, the lead being configured at around the pad and the supporting pad
Bar, wherein,
The support bar and the lead have mat surface and even surface respectively,
In an interarea side, the even surface of the support bar than the lead the even surface closer to the pad.
2. lead frame according to claim 1, it is characterised in that
The support bar has to make the pad than the bending section that the lead more mode prominent to another interarea side is bent,
In the interarea side, the support bar has the even surface in the flat part adjacent with the outside of the bending section.
3. lead frame according to claim 2, it is characterised in that
Observed with and with an interarea vertical section parallel with the long side direction of the support bar bending section
When, with horizontal part and the rake for clipping the horizontal part,
In the interarea side, the support bar has the even surface in the horizontal part.
4. according to lead frame according to any one of claims 1 to 3, it is characterised in that
The even surface is made up of plating silverskin.
5. according to lead frame according to any one of claims 1 to 4, it is characterised in that
Compared with the first imaginary wire that the inner edge of the even surface of the mutually adjacent lead is connected to each other, the branch
The inner edge of the even surface of strut more extends to the land side.
6. according to lead frame according to any one of claims 1 to 5, it is characterised in that
Relative to by by the inner edge of the mutually even surface of the adjacent lead the first imaginary wire connected to each other and will
Annular section clamped by the outer rim of the even surface of the adjacent lead the second imaginary wire connected to each other, the branch
The even surface of strut is inclined to the land side.
7. according to lead frame according to any one of claims 1 to 6, it is characterised in that
The mat surface is made up of cupric oxide envelope.
8. according to lead frame according to any one of claims 1 to 6, it is characterised in that
The mat surface is made up of roughening plating envelope.
9. a kind of semiconductor packages, it possesses：
Lead frame according to any one of claims 1 to 8,
An interarea side of the lead frame be located at the pad surface on semiconductor chip,
By the sealed sealing resin of the semiconductor chip,
In another interarea side of the lead frame, the sealing resin is set in the way of the surface of the pad is exposed.
10. a kind of manufacture method of lead frame, the lead frame possess pad, the lead being configured at around the pad, with
And the support bar of the pad is supported, the manufacture method of the lead frame has：
Surface treatment procedure, in an interarea side of lead frame base material, forms coarse respectively on the support bar and the lead
Face and even surface；
First manufacturing procedure, while the even surface of the support bar is compressed using ingot stripper, while pressing institute using drift
Pad is stated, the support rod bending is formed into bending section, makes the pad than the lead more to the lead frame base material
Another interarea side is protruded.
11. the manufacture method of lead frame according to claim 10, it is characterised in that
With the second manufacturing procedure, while being compressed using ingot stripper than the bending section more by the described smooth of the land side
Face, while pressing the pad using drift and expanding bending section, further makes the pad than the lead more to described another
One interarea side is protruded.
12. the manufacture method of the lead frame according to claim 10 or 11, it is characterised in that
In the surface treatment procedure, the even surface is formed by silver-plated process, passes through copper plating treatment or roughening plating
Processing forms the mat surface.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016028068A JP6621681B2 (en) | 2016-02-17 | 2016-02-17 | Lead frame, manufacturing method thereof, and semiconductor package |
| JP2016-028068 | 2016-02-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107093594A true CN107093594A (en) | 2017-08-25 |
| CN107093594B CN107093594B (en) | 2019-05-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710078784.3A Active CN107093594B (en) | 2016-02-17 | 2017-02-14 | Lead frame and its manufacturing method and semiconductor packages |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6621681B2 (en) |
| CN (1) | CN107093594B (en) |
| MY (1) | MY192355A (en) |
| TW (1) | TWI642146B (en) |
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| JP7016677B2 (en) * | 2017-11-21 | 2022-02-07 | 新光電気工業株式会社 | Manufacturing method of lead frame, semiconductor device, lead frame |
| CN113261095A (en) * | 2019-01-18 | 2021-08-13 | 三菱电机株式会社 | Semiconductor device, method for manufacturing semiconductor device, and power conversion device |
| JP6741356B1 (en) * | 2019-03-22 | 2020-08-19 | 大口マテリアル株式会社 | Lead frame |
| JP6736716B1 (en) * | 2019-03-22 | 2020-08-05 | 大口マテリアル株式会社 | Lead frame |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03295262A (en) * | 1990-04-13 | 1991-12-26 | Mitsubishi Electric Corp | Lead frame and manufacture thereof |
| US6402009B1 (en) * | 1999-02-22 | 2002-06-11 | Sony Corporation | Apparatus and method for shaping lead frame for semiconductor device and lead frame for semiconductor device |
| US20110079887A1 (en) * | 2009-10-01 | 2011-04-07 | Samsung Techwin Co., Ltd. | Lead frame and method of manufacturing the same |
| CN103515261A (en) * | 2012-06-27 | 2014-01-15 | 瑞萨电子株式会社 | Method for manufacturing semiconductor device, and semiconductor device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3314754B2 (en) * | 1999-04-22 | 2002-08-12 | 松下電器産業株式会社 | Semiconductor device having lead-free tin-based solder film and method of manufacturing the same |
| JP3841768B2 (en) * | 2003-05-22 | 2006-11-01 | 新光電気工業株式会社 | Package parts and semiconductor packages |
| US7049683B1 (en) * | 2003-07-19 | 2006-05-23 | Ns Electronics Bangkok (1993) Ltd. | Semiconductor package including organo-metallic coating formed on surface of leadframe roughened using chemical etchant to prevent separation between leadframe and molding compound |
| US7838339B2 (en) * | 2008-04-04 | 2010-11-23 | Gem Services, Inc. | Semiconductor device package having features formed by stamping |
| JP5669495B2 (en) * | 2010-09-17 | 2015-02-12 | 株式会社大貫工業所 | Resin-encapsulated metal component, lead frame used therefor, and method of manufacturing metal component |
| JP2014093452A (en) * | 2012-11-05 | 2014-05-19 | Hitachi Cable Ltd | Punching die, lead frame, and method of manufacturing lead frame |
| JP6093646B2 (en) * | 2013-05-14 | 2017-03-08 | 新光電気工業株式会社 | Manufacturing method of plating film |
-
2016
- 2016-02-17 JP JP2016028068A patent/JP6621681B2/en active Active
-
2017
- 2017-02-14 CN CN201710078784.3A patent/CN107093594B/en active Active
- 2017-02-15 MY MYPI2017700493A patent/MY192355A/en unknown
- 2017-02-16 TW TW106105053A patent/TWI642146B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03295262A (en) * | 1990-04-13 | 1991-12-26 | Mitsubishi Electric Corp | Lead frame and manufacture thereof |
| US6402009B1 (en) * | 1999-02-22 | 2002-06-11 | Sony Corporation | Apparatus and method for shaping lead frame for semiconductor device and lead frame for semiconductor device |
| US20110079887A1 (en) * | 2009-10-01 | 2011-04-07 | Samsung Techwin Co., Ltd. | Lead frame and method of manufacturing the same |
| CN103515261A (en) * | 2012-06-27 | 2014-01-15 | 瑞萨电子株式会社 | Method for manufacturing semiconductor device, and semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6621681B2 (en) | 2019-12-18 |
| MY192355A (en) | 2022-08-17 |
| CN107093594B (en) | 2019-05-03 |
| TW201742197A (en) | 2017-12-01 |
| TWI642146B (en) | 2018-11-21 |
| JP2017147332A (en) | 2017-08-24 |
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