TW201741775A - Alignment method of mask and workpiece in double-sided photolithography device and double-sided photolithography device enabling alignment between a first mask and a second mask and alignment of a first mask and a second mask with a workpiece without moving or rotating the workpiece - Google Patents

Alignment method of mask and workpiece in double-sided photolithography device and double-sided photolithography device enabling alignment between a first mask and a second mask and alignment of a first mask and a second mask with a workpiece without moving or rotating the workpiece Download PDF

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TW201741775A
TW201741775A TW105139412A TW105139412A TW201741775A TW 201741775 A TW201741775 A TW 201741775A TW 105139412 A TW105139412 A TW 105139412A TW 105139412 A TW105139412 A TW 105139412A TW 201741775 A TW201741775 A TW 201741775A
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mask
workpiece
alignment
plane
double
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TW105139412A
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TWI616729B (en
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Kazuhiko Kato
Kenyu Yagi
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Beac Co Ltd
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2022Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2032Simultaneous exposure of the front side and the backside
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70733Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073Alignment marks and their environment
    • G03F9/7084Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels

Abstract

This invention discloses an alignment method of a mask and a workpiece in a double-sided photolithography device and a double-sided photolithography device, which enable alignment between a first mask and a second mask and alignment of a first mask and a second mask with a workpiece without moving and rotating the workpiece, comprising a first mask table which makes the first mask movable along the xy plane and rotatable along the xy plane simultaneously, and a second mask table which makes the second mask movable along the xy plane and rotatable along the xy plane simultaneously. The second mask table is movable and rotatable along the xy plane separately from the first mask table and, when the first mask table moves and rotates along the xy plane, moves and rotates along the xy plane together with the first mask table.

Description

雙面光刻裝置以及雙面光刻裝置中遮罩與工件的對準方法Double-sided lithography apparatus and method for aligning mask and workpiece in double-sided lithography apparatus

本發明有關於雙面光刻裝置以及雙面光刻裝置中遮罩與工件的對準方法。The present invention relates to a double lithography apparatus and a method of aligning a mask with a workpiece in a double lithography apparatus.

以往,對作為光刻對象的工件(電路基板等)的第一面、與該第一面相反側的第二面分別進行光刻的雙面光刻裝置已被廣泛使用。在這樣的雙面光刻裝置中,在將配置於工件的第一面側的第一遮罩與配置於工件的第二面側的第二遮罩進行對準後,再將第一遮罩以及第二遮罩與工件進行對準時,需要在第一遮罩與第二遮罩的位置關係保持不變的情況下,進行第一遮罩以及第二遮罩與工件的對準。Conventionally, a double-sided lithography apparatus that performs photolithography on a first surface of a workpiece (a circuit board or the like) to be lithographically coated and a second surface opposite to the first surface has been widely used. In such a double-sided lithography apparatus, after the first mask disposed on the first surface side of the workpiece is aligned with the second mask disposed on the second surface side of the workpiece, the first mask is placed And when the second mask is aligned with the workpiece, the first mask and the second mask are aligned with the workpiece when the positional relationship between the first mask and the second mask remains unchanged.

像這樣,作為使第一遮罩與第二遮罩的位置關係保持不變來進行第一遮罩以及第二遮罩與工件的對準的對準方法,可列舉的一例為:在將第一遮罩與第二遮罩進行對準後,先將第一遮罩按預先設定的量移動和轉動後,使該第一遮罩與工件進行對準,接著,在根據第一遮罩的移動量或轉動量來移動和轉動第二遮罩,從而使該第二遮罩與工件進行對準。In this way, as an alignment method for maintaining the alignment relationship between the first mask and the second mask and the workpiece while maintaining the positional relationship between the first mask and the second mask, an example of which is: After the mask is aligned with the second mask, the first mask is first moved and rotated by a predetermined amount to align the first mask with the workpiece, and then, according to the first mask The amount of movement or amount of rotation moves and rotates the second mask to align the second mask with the workpiece.

像這樣的對準控制,也就是軟體(Software)控制,其藉由預先構築用於進行對準控制的控制軟體來得以實現。然而,在像這樣的軟體控制過程中,即使是在用於將第一遮罩與工件進行對準控制的控制資料被恰當地設定的情況下,有時也會發生第一遮罩台(Table)驅動構造的運作與第二遮罩台驅動構造的運作間產生物理性偏差的情況。Alignment control like this, that is, software control, is realized by constructing a control software for performing alignment control in advance. However, in the software control process like this, even when the control data for performing the alignment control of the first mask and the workpiece is appropriately set, the first mask table sometimes occurs (Table). The physical deviation between the operation of the drive structure and the operation of the second mask stage drive structure.

因此,如果根據用於將第一遮罩與工件進行對準控制的控制資料,從而將第二遮罩與工件進行對準的話,有可能會在當初已完成對準的第一遮罩與第二遮罩之間產生位置偏移,其結果就是,第一遮罩與第二遮罩無法高精度的完成對準。Therefore, if the second mask is aligned with the workpiece according to the control data for performing the alignment control of the first mask and the workpiece, it is possible that the first mask and the first alignment have been completed. A positional shift occurs between the two masks, and as a result, the first mask and the second mask cannot be aligned with high precision.

另一方面,也有能夠在不使用上述的軟體控制,而是利用機械的運作保持第一遮罩與第二遮罩的位置關係不變,來完成第一遮罩以及第二遮罩與工件的對準的雙面光刻裝置被提出(例如,參照專利文獻1)。On the other hand, it is also possible to complete the first mask and the second mask and the workpiece by using the mechanical operation to maintain the positional relationship between the first mask and the second mask without using the above-described software control. An aligned double-sided lithography apparatus is proposed (for example, refer to Patent Document 1).

專利文獻1中記載的雙面光刻裝置為:在將第一遮罩與第二遮罩的進行對準後,在將已完成對準的第一遮罩以及第二遮罩與工件進行對準時,不將第一遮罩和第二遮罩分別移動和轉動,而是將工件一側在平面上進行移動和轉動。藉由這樣,就能夠在保持第一遮罩與第二遮罩的位置關係不變的情況下,將已完成對準的第一遮罩以及第二遮罩,與工件進行對準。The double-sided lithography apparatus described in Patent Document 1 is configured to align the first mask and the second mask that have been aligned with the workpiece after aligning the first mask and the second mask. On time, the first mask and the second mask are not moved and rotated, respectively, but one side of the workpiece is moved and rotated on a plane. By doing so, it is possible to align the aligned first mask and the second mask with the workpiece while maintaining the positional relationship of the first mask and the second mask unchanged.

先行技術文獻Advanced technical literature

專利文獻1:特開2013-142778號公報Patent Document 1: JP-A-2013-142778

但是,如專利文獻1中記載的雙面光刻裝置般,在將第一遮罩以及第二遮罩與工件進行對準時,使用將工件一側進行移動的方法,但這種方法根據工件種類的不同,有時會有不理想的情況產生。例如,像長條片狀的工件從輸送輥推進至收卷輥,也就是在被稱為卷對卷(Roll to Roll)方式的雙面光刻裝置中,如果要將工件一側在平面上進行移動和轉動的話,由於需要將用於將工件一側在平面上進行移動和轉動的構造組配進工件的輸送構造中,因此工件的輸送構造就會變得複雜,而且,一旦將工件一側在平面上進行移動和轉動,就有可能成為工件褶皺或扭曲的成因。這樣,就存在有一旦工件產生褶皺或扭曲,就無法進行高品質的雙面光刻的課題。However, as in the double-sided lithography apparatus described in Patent Document 1, when the first mask and the second mask are aligned with the workpiece, a method of moving the workpiece side is used, but this method is based on the type of the workpiece. Different, sometimes there will be unsatisfactory situations. For example, a workpiece such as a strip-like piece is advanced from a conveying roller to a winding roller, that is, in a double-sided lithography apparatus called a Roll to Roll method, if one side of the workpiece is to be on a flat surface When moving and rotating, since the structure for moving and rotating the workpiece on one side of the workpiece needs to be incorporated into the conveying structure of the workpiece, the conveying structure of the workpiece becomes complicated, and once the workpiece is The movement and rotation of the side on the plane may become a cause of wrinkles or distortion of the workpiece. Thus, there is a problem that high-quality double-sided lithography cannot be performed once the workpiece is wrinkled or twisted.

本發明鑒於以上課題,以提供一種不將工件移動和轉動,同時又能夠將第一遮罩與第二遮罩、第一遮罩以及第二遮罩與工件進行對準的雙面光刻裝置以及雙面光刻裝置中遮罩與工件的對準方法為目的。The present invention has been made in view of the above problems, and provides a double-sided lithography apparatus capable of aligning a first mask with a second mask, a first mask, and a second mask with a workpiece without moving and rotating the workpiece. And a method of aligning a mask with a workpiece in a double lithography apparatus.

(1)本發明的雙面光刻裝置是將作為光刻對象的工件的第一面藉由第一遮罩進行光刻,將與該第一面相反側的第二面藉由第二遮罩進行光刻,其特徵在於,在將與第一面以及第二面相平行的面定為包含有垂直相交的x軸以及y軸的xy平面時,包括:使第一遮罩可沿xy平面移動的同時沿xy平面轉動的第一遮罩台;以及使第二遮罩可沿xy平面移動的同時沿xy平面轉動的第二遮罩台,其中,第二遮罩台安裝在第一遮罩臺上,並且能夠在該第一遮罩臺上除該第一遮罩台之外沿xy平面移動的同時沿xy平面轉動,並且當第一遮罩台沿xy平面移動時,隨該第一遮罩台一同在xy平面上以相同方向移動相同的量,當第一遮罩台沿xy平面轉動時,隨該第一遮罩台一同在xy平面上以相同方向轉動相同的量。(1) In the double lithography apparatus of the present invention, the first surface of the workpiece to be lithographically coated is photolithographically patterned by the first mask, and the second surface opposite to the first surface is etched by the second mask The lithography is characterized in that, when the surface parallel to the first surface and the second surface is defined as an xy plane including the vertically intersecting x-axis and the y-axis, the method includes: making the first mask along the xy plane a first mask stage that moves while moving along the xy plane; and a second mask stage that rotates along the xy plane while the second mask is movable along the xy plane, wherein the second mask stage is mounted on the first cover a cover table, and is rotatable along the xy plane while moving along the xy plane except the first mask stage on the first mask stage, and when the first mask stage moves along the xy plane, A masking table is moved by the same amount in the same direction on the xy plane. When the first masking table is rotated along the xy plane, the first masking table is rotated by the same amount in the same direction on the xy plane.

像這樣,本發明的光刻裝置為第二遮罩台被載置在第一遮罩臺上,能夠在該第一遮罩臺上除該第一遮罩台之外沿xy平面移動的同時沿xy平面轉動,當第一遮罩台沿xy平面移動時,隨該第一遮罩台一同在xy平面上以相同方向移動相同的量,當第一遮罩台沿xy平面轉動時,隨該第一遮罩台一同在xy平面上以相同方向轉動相同的量。As such, the lithographic apparatus of the present invention has the second mask stage placed on the first mask stage, and is movable on the first mask stage along the xy plane except for the first mask stage. Rotating along the xy plane, when the first mask stage moves along the xy plane, the first mask stage moves in the same direction on the xy plane by the same amount, and when the first mask stage rotates along the xy plane, The first mask table is rotated by the same amount in the same direction on the xy plane.

由於本發明的光刻裝置是上述這樣的構成,因此能夠在不移動和不轉動工件的情況下,能夠將第一遮罩與第二遮罩、第一遮罩以及第二遮罩與工件進行對準。藉由這樣,就沒有必要將用於在工件一側的平面上進行移動和轉動的構造組配進工件的輸送構造中,也就不會使工件的輸送構造複雜化,另外,由於不會使工件產生褶皺或扭曲,因此就能夠進行高品質的雙面光刻。Since the lithographic apparatus of the present invention has such a configuration as described above, the first mask and the second mask, the first mask, and the second mask and the workpiece can be performed without moving or rotating the workpiece. alignment. In this way, it is not necessary to fit the structure for moving and rotating on the plane of one side of the workpiece into the conveying structure of the workpiece, so that the conveying structure of the workpiece is not complicated, and since The workpiece is wrinkled or twisted, so high-quality double-sided lithography can be performed.

另外,根據本發明的光刻裝置,不但能夠在第一遮罩與第二遮罩進行對準後,在第一遮罩與第二遮罩位置關係保持不變的情況下,進行第一遮罩以及第二遮罩與工件的對準,更能夠在第一遮罩與工件進行對準後,在第一遮罩與工件位置關係保持不變的情況下,進行第一遮罩與第二遮罩的對準。In addition, according to the lithographic apparatus of the present invention, not only after the first mask and the second mask are aligned, but also the first mask and the second mask position relationship remain unchanged, the first mask is performed. The hood and the alignment of the second mask and the workpiece are further capable of performing the first mask and the second after the first mask and the workpiece are aligned, and the first mask and the workpiece position relationship remain unchanged. The alignment of the mask.

(2)在本發明的雙面光刻裝置中,最好是具有:設置在工件的第一面側,並且能夠將第一遮罩自如地安裝和卸下的第一遮罩安裝板(Plate);以及設置在工件的第二面側,並且能夠將第二遮罩自如地安裝和卸下的第二遮罩安裝板,其中,第一遮罩安裝板藉由垂直設置於第一遮罩臺上的支撐部件從而被固定在第一遮罩臺上,第二遮罩安裝板藉由垂直設置於第二遮罩臺上的支撐部件從而被固定在第二遮罩臺上。(2) In the double lithography apparatus of the present invention, it is preferable to have a first mask mounting plate (Plate) which is provided on the first surface side of the workpiece and which is capable of freely attaching and detaching the first mask (Plate) And a second mask mounting plate disposed on the second side of the workpiece and capable of freely mounting and detaching the second mask, wherein the first mask mounting plate is vertically disposed on the first mask The support member on the table is thus fixed to the first mask table, and the second mask mounting plate is fixed to the second mask table by a support member vertically disposed on the second mask table.

由於是上述這樣的構成,因此當第一遮罩台沿xy平面移動時,第一遮罩安裝板會隨第一遮罩台一同在xy平面上以相同方向移動相同的量,當第一遮罩台沿xy平面轉動時,第一遮罩安裝板會隨第一遮罩台一同在xy平面上以相同方向轉動相同的量。藉由這樣,就能夠實現第一遮罩沿xy平面移動的同時沿xy平面轉動。同樣的,當第二遮罩台沿xy平面移動時,第二遮罩安裝板會隨第二遮罩台一同在xy平面上以相同方向移動相同的量,當第二遮罩台沿xy平面轉動時,第二遮罩安裝板會隨第二遮罩台一同在xy平面上以相同方向轉動相同的量。藉由這樣,就能夠實現第二遮罩沿xy平面移動的同時沿xy平面轉動。Because of the above configuration, when the first mask table moves along the xy plane, the first mask mounting plate moves the same amount in the same direction on the xy plane along with the first mask table, when the first cover When the cover is rotated along the xy plane, the first mask mounting plate is rotated by the same amount in the same direction on the xy plane along with the first mask table. By doing so, it is possible to rotate the first mask while moving along the xy plane while moving along the xy plane. Similarly, when the second mask table moves along the xy plane, the second mask mounting plate moves the same amount in the same direction on the xy plane along with the second mask table, when the second mask table is along the xy plane. When rotated, the second mask mounting plate rotates the same amount in the same direction on the xy plane along with the second mask table. By doing so, it is possible to rotate the second mask while moving along the xy plane while moving along the xy plane.

(3)在本發明的雙面光刻裝置中,可沿xy平面移動最好是指,可沿x軸移動的同時可沿y軸移動;可沿xy平面轉動最好是指,能夠在與xy平面相垂直的z軸周圍轉動。(3) In the double-sided lithography apparatus of the present invention, the movement along the xy plane preferably means that it can move along the y-axis while moving along the x-axis; the rotation along the xy plane preferably means that The xy plane rotates around the z-axis perpendicular to the axis.

藉由這樣,由於只要將用於驅動第一遮罩台以及第二遮罩台的驅動構造設置為能夠朝垂直相交的兩個軸(x軸以及y軸)移動(往返移動)、以及能夠在與xy平面垂直的z軸周圍轉動(順時針轉動以及逆時針轉動)即可,因此就能夠使驅動構造單純化。In this way, since the driving structure for driving the first mask stage and the second mask stage is set to be movable (reciprocating movement) to two axes (x-axis and y-axis) perpendicularly intersecting, and It is sufficient to rotate around the z-axis perpendicular to the xy plane (clockwise rotation and counterclockwise rotation), so that the drive structure can be simplified.

(4)在本發明的雙面光刻裝置中,最好是:用於第一遮罩與第二遮罩對準的遮罩對準標記(Mark)被分別設置於第一遮罩和第二遮罩上,同時,用於第一遮罩以及第二遮罩與工件對準的工件對準標記被分別設置於第一遮罩以及第二遮罩中至少一方的遮罩上和工件上。(4) In the double lithography apparatus of the present invention, preferably, the mask alignment marks (Mark) for aligning the first mask and the second mask are respectively disposed on the first mask and the And the workpiece alignment marks for the first mask and the second mask aligned with the workpiece are respectively disposed on the mask and the workpiece of at least one of the first mask and the second mask. .

藉由這樣,在進行第一遮罩與第二遮罩對準的同時,更能夠進行第一遮罩以及第二遮罩與工件的對準。By doing so, alignment of the first mask and the second mask with the workpiece can be performed while the first mask and the second mask are aligned.

(5)在本發明的雙面光刻裝置中,最好是進一步包括:能夠對遮罩對準標記以及工件對準標記進行攝像的攝像裝置;以及具備根據藉由該攝像裝置獲得的攝像資料,控制第二遮罩台使分別被設置於第一遮罩與第二遮罩處的遮罩對準標記一致,同時,控制第一遮罩台使分別被設置於第一遮罩以及第二遮罩中至少一方的遮罩處與工件處的工件對準標記一致功能的對準控制裝置。(5) In the double-sided lithography apparatus of the present invention, preferably, further comprising: an image pickup device capable of capturing a mask alignment mark and a workpiece alignment mark; and having image data obtained by the image pickup device Controlling the second mask table so that the mask alignment marks respectively disposed at the first mask and the second mask are consistent, and simultaneously controlling the first mask table to be respectively disposed on the first mask and the second An alignment control device that functions at least one of the masks at the mask and the workpiece alignment mark at the workpiece.

藉由具備像這樣的攝像裝置以及對準控制裝置,就能夠在不移動和不轉動工件的情況下,進行第一遮罩與第二遮罩、第一遮罩以及第二遮罩與工件的對準。例如,能夠將第二遮罩高精度地與第一遮罩對準,同時,在完成第一遮罩與第二遮罩高精度地對準後,在不移動工件的情況下進行第一遮罩以及第二遮罩與工件的高精度對準。By providing such an image pickup device and an alignment control device, the first mask and the second mask, the first mask, and the second mask and the workpiece can be performed without moving or rotating the workpiece. alignment. For example, the second mask can be aligned with the first mask with high precision, and at the same time, after the first mask and the second mask are aligned with high precision, the first mask is performed without moving the workpiece. High precision alignment of the cover and the second mask with the workpiece.

(6)在本發明的雙面光刻裝置中,最好是:進一步具有能夠控制用於移動攝像裝置的攝像裝置移動控制裝置,並且該攝像裝置移動控制裝置具備,至少在光刻時控制攝像裝置移動從而使攝像裝置位於離開工件上的光刻物件區域的位置上的功能。(6) In the double-sided lithography apparatus of the present invention, it is preferable to further have an imaging device movement control device capable of controlling a moving imaging device, and the imaging device movement control device is provided to control imaging at least during photolithography The device moves to position the camera at a location away from the area of the lithographic article on the workpiece.

藉由這樣,由於攝像裝置在光刻時位於離開工件上的光刻物件區域的位置上,因此在進行光刻時,就能夠防止攝像裝置遮擋來自於光源的光。In this way, since the image pickup device is located at a position away from the lithographic article region on the workpiece during photolithography, it is possible to prevent the image pickup device from blocking light from the light source during photolithography.

(7)在本發明的雙面光刻裝置中,最好是:遮罩對準標記在第一遮罩上的相互隔開的規定位置上設置m處(m為大於等於2的整數),並且在第二遮罩上的相互隔開的規定位置上與第一遮罩上設置的m處遮罩對準標記相對應地設置m處;工件對準標記在第一遮罩以及第二遮罩中至少一方的遮罩上的相互隔開的規定位置上設置n處(n為大於等於2的整數),並且在工件上的相互隔開的規定位置上與遮罩上設置的n處工件對準標記相對應地設置n處。(7) In the double-sided lithography apparatus of the present invention, it is preferable that the mask alignment marks are provided at positions m (m is an integer of 2 or more) at predetermined positions spaced apart from each other on the first mask, And at a predetermined position on the second mask at a mutually spaced predetermined position corresponding to the mask alignment mark disposed at the first mask, where m is disposed; the workpiece alignment mark is at the first mask and the second mask n at a predetermined position on the mask of at least one of the covers (n is an integer greater than or equal to 2), and n workpieces disposed on the mask at predetermined positions spaced apart from each other on the workpiece The alignment mark is correspondingly set to n.

遮罩對準標記藉由像這樣被設置在第一遮罩和第二遮罩上,就能夠高精度地進行第一遮罩與第二遮罩的對準。另外,工件對準標記藉由像這樣被設置在第一遮罩以及第二遮罩中至少一方的遮罩與工件上,就能夠高精度地進行第一遮罩以及第二遮罩與工件的對準。By providing the mask alignment marks on the first mask and the second mask as described above, the alignment of the first mask and the second mask can be performed with high precision. Further, since the workpiece alignment mark is provided on at least one of the first mask and the second mask as described above, the first mask and the second mask and the workpiece can be accurately performed. alignment.

(8)本發明的雙面光刻裝置中遮罩與工件的對準方法是在將作為光刻物件的工件的第一面藉由第一遮罩進行光刻,並且將與該第一面相反側的第二面藉由第二遮罩進行光刻的雙面光刻裝置中,在進行第一遮罩與第二遮罩對準的同時,進行第一遮罩以及第二遮罩與工件對準,其特徵在於:作為雙面光刻裝置,使用(1)至(7)中任意一個所記載的雙面光刻裝置,並且作為在進行第一遮罩與第二遮罩對準的同時,進行第一遮罩以及第二遮罩與工件對準的步驟,包括:遮罩對準步驟,藉由對第二遮罩台進行沿xy平面的移動以及沿xy平面的轉動中的至少一方來進行第一遮罩與第二遮罩的對準;以及遮罩・工件對準步驟,藉由對第一遮罩台進行沿xy平面的移動以及轉動中的至少一方來進行第一遮罩與工件的對準。(8) The method of aligning a mask with a workpiece in the double lithography apparatus of the present invention is to photolithography the first surface of the workpiece as a lithographic article by the first mask, and to be associated with the first surface In the double-sided lithography apparatus on which the second side of the opposite side is photolithographically patterned by the second mask, the first mask and the second mask are performed while the first mask and the second mask are aligned. The workpiece alignment is characterized in that, as the double-sided lithography apparatus, the double-sided lithography apparatus described in any one of (1) to (7) is used, and as the first mask and the second mask are aligned Simultaneously, the step of performing the first mask and the second mask to align with the workpiece comprises: a mask alignment step, by moving the second mask stage along the xy plane and rotating along the xy plane At least one of the first mask and the second mask is aligned; and the mask and the workpiece alignment step are performed by performing at least one of movement and rotation of the first mask table along the xy plane The alignment of the mask with the workpiece.

根據本發明的雙面光刻裝置中遮罩與工件的對準方法,由於作為雙面光刻裝置,使用的是(1)至(7)中任意一個所記載的雙面光刻裝置,因此能夠獲得與(1)至(7)中所記載的雙面光刻裝置所具有的效果相同的效果。According to the double-sided lithography apparatus of the present invention, the double-sided lithography apparatus described in any one of (1) to (7) is used as the double-sided lithography apparatus. The same effects as those of the double-sided lithography apparatus described in (1) to (7) can be obtained.

(9)在本發明的雙面光刻裝置中遮罩與工件的對準方法中,最好是在進行遮罩對準步驟後進行遮罩與工件對準步驟。(9) In the method of aligning a mask with a workpiece in the double lithography apparatus of the present invention, it is preferable to perform the step of aligning the mask with the workpiece after performing the mask alignment step.

該與工件的對準方法是先將第一遮罩與第二遮罩進行對準(遮罩對準步驟)後,再將第一遮罩以及第二遮罩與工件進行對準(遮罩與工件對準步驟),藉由將遮罩對準步驟、遮罩與工件對準步驟按此順序進行,就能夠在第一遮罩與第二遮罩位置關係保持不變的情況下,進行第一遮罩以及第二遮罩與工件的對準。The alignment with the workpiece is performed by aligning the first mask with the second mask (mask alignment step), and then aligning the first mask and the second mask with the workpiece (mask) In the step of aligning the workpiece with the step of aligning the mask, the step of masking and the step of aligning the workpiece, the relationship between the position of the first mask and the second mask can be maintained. The first mask and the second mask are aligned with the workpiece.

(10)在本發明的雙面光刻裝置中遮罩與工件的對準方法中,也能夠在進行遮罩與工件對準步驟後,進行遮罩對準步驟。(10) In the double-sided lithography apparatus of the present invention, in the method of aligning the mask with the workpiece, the mask alignment step may be performed after the mask and the workpiece alignment step.

該遮罩與工件的對準方法是先將第一遮罩與工件進行對準(遮罩與工件對準步驟)後,再將第一遮罩與第二遮罩進行對準(遮罩對準步驟),藉由將遮罩對準步驟、遮罩與工件對準步驟按此順序進行,就能夠在第一遮罩與工件位置關係保持不變的情況下,進行第一遮罩與第二遮罩的對準。The method of aligning the mask with the workpiece is to first align the first mask with the workpiece (the step of aligning the mask with the workpiece), and then align the first mask with the second mask (mask pair) In the order of mask alignment step, mask and workpiece alignment step, the first mask and the first mask can be performed while the first mask and the workpiece position relationship remain unchanged The alignment of the two masks.

以下,對本發明的實施方式進行說明。Hereinafter, embodiments of the present invention will be described.

第1圖是實施方式所涉及的雙面光刻裝置10的說明用斜視圖。Fig. 1 is a perspective view for explaining the double-sided lithography apparatus 10 according to the embodiment.

第2圖是實施方式所涉及的雙面光刻裝置10的說明用正面圖。另外,第2圖中有一部分作為截面圖展示。Fig. 2 is a front view for explaining the double-sided lithography apparatus 10 according to the embodiment. In addition, a part of Fig. 2 is shown as a sectional view.

實施形態所涉及的雙面光刻裝置10如第1圖以及第2圖所示,將作為光刻對象的工件W的第一面Wa藉由第一遮罩M1進行光刻,將與該第一面Wa相反側的第二面Wb藉由第二遮罩M2進行光刻。另外在實施形態所涉及的雙面光刻裝置10中,工件W定為長條片狀物,該長條片狀的工件W自輸送輥(未圖示)向收卷輥行進,即定為卷對卷方式的雙面光刻裝置。另外,工件W例如為柔性(Flexible)電路基板等,第一遮罩M1以及第二遮罩M2分別由形成為矩形的透明板材(例如玻璃板等)組成,並且分別形成有規定的圖形(定為電路圖形)。As shown in FIGS. 1 and 2, the double-sided lithography apparatus 10 according to the embodiment lithographs the first surface Wa of the workpiece W as a lithography target by the first mask M1. The second surface Wb on the opposite side of the Wa side is photolithographically patterned by the second mask M2. Further, in the double lithography apparatus 10 according to the embodiment, the workpiece W is defined as a long sheet, and the long sheet-shaped workpiece W travels from a conveying roller (not shown) to the winding roller, that is, A roll-to-roll double lithography apparatus. Further, the workpiece W is, for example, a flexible circuit substrate or the like, and the first mask M1 and the second mask M2 are each composed of a transparent plate material (for example, a glass plate or the like) formed in a rectangular shape, and each of which is formed with a predetermined pattern (determined) For circuit graphics).

再有,在實施方式中,將與工件W的第一面Wa以及第二面Wb相平行的面定為包含有垂直相交的兩個軸(x軸以及 y軸)的平面,x軸定為沿工件W的行進方向,y軸定為沿與工件W的行進方向垂直相交的方向來進行說明。Further, in the embodiment, the plane parallel to the first surface Wa and the second surface Wb of the workpiece W is defined as a plane including two axes (x-axis and y-axis) perpendicularly intersecting, and the x-axis is defined as The y-axis is defined along the direction in which the workpiece W travels in a direction perpendicular to the traveling direction of the workpiece W.

以下,對實施方式所涉及的雙面光刻裝置10進行詳細說明。Hereinafter, the double sided lithography apparatus 10 according to the embodiment will be described in detail.

實施方式所涉及的雙面光刻裝置10包括:使第一遮罩M1可沿xy平面移動的同時沿xy平面轉動的第一遮罩台100;以及使第二遮罩M2可沿xy平面移動的同時沿xy平面轉動的第二遮罩台200,另外,「可沿xy平面移動」是指,可沿x軸移動的同時沿y軸移動;「可沿xy平面轉動」是指,可在與xy平面垂直的z軸周圍轉動。The double-sided lithography apparatus 10 according to the embodiment includes: a first mask stage 100 that rotates along the xy plane while the first mask M1 is movable along the xy plane; and the second mask M2 is movable along the xy plane The second mask stage 200 that rotates along the xy plane at the same time, and the "movable along the xy plane" means that it can move along the y-axis while moving along the x-axis; "can be rotated along the xy plane" means that Rotate around the z-axis perpendicular to the xy plane.

另外,第二遮罩台200載置在第一遮罩台100上,並且能夠在該第一遮罩台100上除該第一遮罩台100之外沿xy平面移動的同時沿xy平面轉動。另外,當第一遮罩台100沿xy平面移動時,第二遮罩台200隨該第一遮罩台100一同在xy平面上以相同方向移動相同的量,當第一遮罩台100沿xy平面轉動時,第二遮罩台200隨該第一遮罩台100一同在xy平面上以相同方向轉動相同的量。In addition, the second mask stage 200 is placed on the first mask stage 100, and can be rotated along the xy plane while moving along the xy plane except the first mask stage 100 on the first mask stage 100. . In addition, when the first mask stage 100 moves along the xy plane, the second mask stage 200 moves the same amount in the same direction on the xy plane along with the first mask stage 100, when the first mask stage 100 is along When the xy plane is rotated, the second mask stage 200 is rotated by the same amount in the same direction on the xy plane as the first mask stage 100.

具體來說,當第一遮罩台100沿x軸向一個方向移動規定的量時,第二遮罩台200也沿x軸向一個方向移動相同的量;當第一遮罩台100沿x軸向另一個方向移動規定的量時,第二遮罩台200也沿x軸向另一個方向移動相同的量。另外,當第一遮罩台100沿y軸移動時也同樣如此。即:當第一遮罩台100沿y軸向一個方向移動規定的量時,第二遮罩台200也沿y軸向一個方向移動相同的量;當第一遮罩台100沿y軸向另一個方向移動規定的量時,第二遮罩台200也沿y軸向另一個方向移動相同的量。Specifically, when the first mask stage 100 is moved by a predetermined amount in one direction of the x-axis, the second mask stage 200 is also moved by the same amount in one direction of the x-axis; when the first mask stage 100 is along the x When the axial direction moves by a predetermined amount in the other direction, the second mask stage 200 is also moved by the same amount in the other direction of the x-axis. In addition, the same is true when the first mask stage 100 is moved along the y-axis. That is, when the first mask stage 100 is moved by a predetermined amount in one direction of the y-axis, the second mask stage 200 is also moved by the same amount in one direction of the y-axis; when the first mask stage 100 is along the y-axis When the other direction is moved by a prescribed amount, the second mask stage 200 is also moved by the same amount in the other direction of the y-axis.

另外,當第一遮罩台100在y軸周圍順時針轉動規定的量時,第二遮罩台200也在y軸周圍順時針轉動相同的量;當第一遮罩台100在y軸周圍逆時針轉動規定的量時,第二遮罩台200也在y軸周圍逆時針轉動相同的量。In addition, when the first mask stage 100 is rotated clockwise by a predetermined amount around the y-axis, the second mask stage 200 is also rotated clockwise by the same amount around the y-axis; when the first mask stage 100 is around the y-axis When the predetermined amount is rotated counterclockwise, the second mask table 200 is also rotated counterclockwise by the same amount around the y-axis.

像這樣,第二遮罩台200就能夠除第一遮罩台100之外沿xy平面移動和沿xy平面轉動,並且,當第一遮罩台100沿xy平面移動時,就會隨第一遮罩台100一同在xy平面上以相同方向移動相同的量,當第一遮罩台100沿xy平面轉動時,就會隨第一遮罩台100一同在xy平面上以相同方向轉動相同的量。再有,在第1圖以及第2圖中,用於驅動第一遮罩台100以及第二遮罩台200的驅動構造的圖示被省略。In this manner, the second mask stage 200 can move along the xy plane and rotate along the xy plane except for the first mask stage 100, and when the first mask stage 100 moves along the xy plane, it will follow the first The mask stage 100 is moved by the same amount in the same direction on the xy plane. When the first mask stage 100 is rotated along the xy plane, the first mask stage 100 rotates in the same direction on the xy plane in the same direction. the amount. In addition, in FIG. 1 and FIG. 2, illustration of the drive structure for driving the first mask stage 100 and the second mask stage 200 is omitted.

下面,將進一步地就第一遮罩台100以及第二遮罩台200進行說明。首先,對第一遮罩台100進行說明。第一遮罩台100的平面形狀大致呈矩形,並且該第一遮罩台100的幾乎中央部形成有用來透過來自於第一光源310的光的空間部101。Next, the first mask stage 100 and the second mask stage 200 will be further described. First, the first mask stage 100 will be described. The planar shape of the first mask stage 100 is substantially rectangular, and a space portion 101 for transmitting light from the first light source 310 is formed at almost the center portion of the first mask stage 100.

在這樣的第一遮罩台100的四個角落處,分別垂直設置有作為支撐部件的支柱111,各支柱111的前端部固定有可將第一遮罩M1自如裝卸的第一遮罩安裝板120。第一遮罩安裝板120被設置在工件W的第一面側。還有,第一遮罩安裝板120的幾乎中央部形成有用來透過來自於第二光源320的光的空間部121,該空間部121處可自如裝卸地安裝有第一遮罩M1來覆蓋該空間部121。At the four corners of the first mask stage 100, pillars 111 as support members are vertically disposed, and a front end portion of each pillar 111 is fixed with a first mask mounting plate that can freely attach and detach the first mask M1. 120. The first mask mounting plate 120 is disposed on the first face side of the workpiece W. Further, a space portion 121 for transmitting light from the second light source 320 is formed at a substantially central portion of the first mask mounting plate 120, and the first mask M1 is detachably attached to the space portion 121 to cover the space portion 121. Space portion 121.

由於第一遮罩安裝板120像這樣被固定在第一遮罩台100上,因此該第一遮罩安裝板120能夠在當第一遮罩台100沿xy平面移動時,隨第一遮罩台100一同在xy平面上以相同方向移動相同的量,並且當第一遮罩台100沿xy平面轉動時,隨第一遮罩台100一同在xy平面上以相同方向轉動相同的量。藉由這樣,第一遮罩M1的沿xy平面的移動以及沿xy平面的轉動,就依靠第一遮罩台100的沿xy平面的移動以及沿xy平面的轉動來進行。Since the first mask mounting plate 120 is fixed to the first mask table 100 as such, the first mask mounting plate 120 can follow the first mask when the first mask table 100 moves along the xy plane The stage 100 is moved by the same amount in the same direction on the xy plane, and when the first mask stage 100 is rotated along the xy plane, the first mask table 100 is rotated by the same amount in the same direction on the xy plane. By this, the movement of the first mask M1 along the xy plane and the rotation along the xy plane are performed by the movement of the first mask stage 100 along the xy plane and the rotation along the xy plane.

另外,第一遮罩安裝板120更藉由未圖示的驅動構造,可沿z軸方向(在第1圖以及第2圖中為上下方向)往返移動。因此,能夠對第一遮罩M1與工件W之間的間隔進行調整。Further, the first mask mounting plate 120 is reciprocally movable in the z-axis direction (upward and downward directions in the first drawing and the second drawing) by a driving structure (not shown). Therefore, the interval between the first mask M1 and the workpiece W can be adjusted.

接著,對第二遮罩台200進行說明,第二遮罩台200也與第一遮罩台100同樣,在平面形狀上大致呈矩形,但是在尺寸上要小於第一遮罩台100,並且第二遮罩台200在其四個邊緣部(邊)與第一遮罩台100分別對應的邊緣部(邊)之間在設置有規定的間隔的狀態下被載置在第一遮罩台100上。另外,第二遮罩台200的幾乎中央部形成有用來透過來自於第一光源310的光的空間部201。Next, the second mask stage 200 will be described. The second mask stage 200 is also substantially rectangular in plan shape like the first mask stage 100, but is smaller in size than the first mask stage 100, and The second mask stage 200 is placed on the first mask stage with a predetermined interval between the four edge portions (edges) and the edge portions (edges) corresponding to the first mask stage 100, respectively. 100 on. Further, a space portion 201 for transmitting light from the first light source 310 is formed at almost the center portion of the second mask stage 200.

在這樣的第二遮罩台200的四個角落處,分別垂直設置有作為支撐部件的支柱211,各支柱211的前端部固定有可將第二遮罩M2自如裝卸的第二遮罩安裝板220。第二遮罩安裝板220被設置在工件W的第二面側。還有,第二遮罩安裝板320的幾乎中央部形成有用來透過來自於第一光源310的光的空間部221,該空間部221處可自如裝卸地安裝有第二遮罩M2來覆蓋該空間部221。At the four corners of the second mask stage 200, pillars 211 as support members are vertically disposed, and a front end portion of each pillar 211 is fixed with a second mask mounting plate that can freely attach and detach the second mask M2. 220. The second mask mounting plate 220 is disposed on the second face side of the workpiece W. Further, a space portion 221 for transmitting light from the first light source 310 is formed at a substantially central portion of the second mask mounting plate 320, and the second mask M2 is detachably attached to the space portion 221 to cover the space portion 221 Space portion 221.

不過,在實施方式所涉及的雙面光刻裝置中,被設置在第一遮罩安裝板120上的空間部121,與被設置在第二遮罩安裝板220上的空間部221分別被定位相同尺寸。However, in the double lithography apparatus according to the embodiment, the space portion 121 provided on the first mask mounting plate 120 and the space portion 221 provided on the second mask mounting plate 220 are respectively positioned. Same size.

由於第二遮罩安裝板220像這樣被固定在第二遮罩台200上,因此該第二遮罩安裝板220能夠在當第二遮罩台200沿xy平面移動時,隨第二遮罩台200一同在xy平面上以相同方向移動相同的量,並且當第二遮罩台200沿xy平面轉動時,隨第二遮罩台200一同在xy平面上以相同方向轉動相同的量。藉由這樣,第二遮罩M2的沿xy平面的移動以及沿xy平面的轉動,就依靠第二遮罩台200的沿xy平面的移動以及沿xy平面的轉動來進行。Since the second mask mounting plate 220 is fixed to the second mask table 200 as such, the second mask mounting plate 220 can follow the second mask when the second mask table 200 moves along the xy plane The stage 200 is moved by the same amount in the same direction on the xy plane, and when the second mask stage 200 is rotated along the xy plane, the second mask stage 200 is rotated by the same amount in the same direction on the xy plane. By this, the movement of the second mask M2 along the xy plane and the rotation along the xy plane are performed by the movement of the second mask table 200 along the xy plane and the rotation along the xy plane.

另外,第二遮罩安裝板220更藉由未圖示的驅動構造,可沿z軸方向(在第1圖以及第2圖中為上下方向)往返移動。因此,能夠對第二遮罩M2與工件W之間的間隔進行調整。Further, the second mask mounting plate 220 can be reciprocated in the z-axis direction (the vertical direction in the first drawing and the second drawing) by a driving structure (not shown). Therefore, the interval between the second mask M2 and the workpiece W can be adjusted.

不過,在第一遮罩安裝板120與第二遮罩安裝板220之間設置有規定的間隔,並且在第一遮罩安裝板120與第二遮罩安裝板220之間更介入有工件W。However, a predetermined interval is provided between the first mask mounting plate 120 and the second mask mounting plate 220, and a workpiece W is further interposed between the first mask mounting plate 120 and the second mask mounting plate 220. .

另外,在第一光源310以及第二光源320中,第一光源310被設置為:在第一遮罩台100側,該第一光源310的光軸L1呈水準方向。並且,來自於第一光源310的光藉由反射鏡(Mirror)330折射90度後,對第二遮罩M2進行照射,從而使形成於該第二遮罩M2上的電路圖形在工件W的第二面Wb上成像。另一方面,第二光源320被設置為:在第一遮罩安裝板120側,該第二光源320的光軸L2呈水準方向。並且,來自於第二光源320的光藉由反射鏡340折射90度後,對第一遮罩M1進行照射,從而使形成於該第一遮罩M1上的電路圖形在工件W的第一面Wa上成像。In addition, among the first light source 310 and the second light source 320, the first light source 310 is disposed on the side of the first mask stage 100, and the optical axis L1 of the first light source 310 is in the horizontal direction. Moreover, after the light from the first light source 310 is refracted by the mirror 330 for 90 degrees, the second mask M2 is irradiated, so that the circuit pattern formed on the second mask M2 is on the workpiece W. Imaging on the second side Wb. On the other hand, the second light source 320 is disposed on the side of the first mask mounting plate 120, and the optical axis L2 of the second light source 320 is in the horizontal direction. Moreover, after the light from the second light source 320 is refracted by the mirror 340 by 90 degrees, the first mask M1 is irradiated, so that the circuit pattern formed on the first mask M1 is on the first side of the workpiece W. Imaging on Wa.

再有,第一遮罩安裝板120側以及第二遮罩安裝板220側的第一光源310以及第二光源320的配置方法並沒有被特別地限定,只要是能夠將分別形成於第一遮罩M1以及第二遮罩M2上的電路圖型適宜地成像在工件W的第一面Wa以及第二面Wb上即可。Further, the method of arranging the first light source 310 and the second light source 320 on the side of the first mask mounting plate 120 and the second mask mounting plate 220 is not particularly limited as long as it can be formed in the first cover. The circuit pattern on the cover M1 and the second mask M2 is suitably formed on the first surface Wa and the second surface Wb of the workpiece W.

另外,雖然在第1圖以及第2圖中並未圖示,但用於第一遮罩M1與第二遮罩M2對準的對準標記(也就是遮罩對準標記)被分別設置於第一遮罩M1和第二遮罩M2上,同時,用於第一遮罩M1以及第二遮罩M2與工件W對準的對準標記(也就是工件對準標記)被分別設置於第一遮罩M1以及第二遮罩M2中至少一方的遮罩(在實施方式所涉及的雙面光刻裝置10中定為第一遮罩M1)與工件W上。關於這些遮罩對準標記以及工件對準標記,將根據第4圖進行後述。In addition, although not shown in FIGS. 1 and 2, the alignment marks (that is, the mask alignment marks) for aligning the first mask M1 and the second mask M2 are respectively disposed on The first mask M1 and the second mask M2, at the same time, the alignment marks (ie, the workpiece alignment marks) for aligning the first mask M1 and the second mask M2 with the workpiece W are respectively set at the first A mask (at the first mask M1 in the double lithography apparatus 10 according to the embodiment) of at least one of the mask M1 and the second mask M2 is placed on the workpiece W. These mask alignment marks and workpiece alignment marks will be described later based on Fig. 4 .

另外,同樣雖然在第1圖以及第2圖中並未圖示,但設置有可對遮罩對準標記和工件對準標記進行攝像的攝像裝置;以及根據藉由該攝像裝置獲得的攝像資料,從而對第一遮罩台100進行控制的同時,對第二遮罩台200進行控制的對準控制裝置。關於這些攝像裝置以及對準控制裝置,將根據第4圖以及第5圖進行後述。Further, although not shown in FIGS. 1 and 2, an image pickup device that can image the mask alignment mark and the workpiece alignment mark is provided, and image data obtained by the image pickup device are provided. Thereby, the alignment control device that controls the second mask stage 200 while controlling the first mask stage 100. These imaging devices and alignment control devices will be described later based on FIGS. 4 and 5 .

第3圖是第一遮罩台100沿xy平面移動以及沿xy平面轉動的說明圖。另外,用於使第一遮罩台100沿xy平面移動以及沿xy平面轉動的驅動構造由於可以使用公知的技術,因此在第3圖中,省略了關於電機之外的構成要素的圖示以及說明,並且以模式化標示。另外,雖然在第3圖中對第一遮罩台100進行說明,但第二遮罩台200也可以幾乎同樣的方式實施。Figure 3 is an explanatory view of the first mask stage 100 moving along the xy plane and rotating along the xy plane. In addition, since the drive structure for moving the first mask stage 100 along the xy plane and rotating along the xy plane can use a well-known technique, in FIG. 3, illustration of components other than the motor and the illustration are omitted. Description, and marked with a pattern. Further, although the first mask stage 100 will be described in the third diagram, the second mask stage 200 can be implemented in almost the same manner.

如第3圖所示,用來給第一遮罩台100提供驅動力的三個或是四個(在實施方式所涉及的雙面光刻裝置中定為三個)電機(定為伺服電機(Servo motors))Sx11、Sx12、以及Sy13分別被設置在第一遮罩台100的四個角部中的三個角部附近,藉由選擇性地運行該三個電機Sx11、Sx12、以及Sy13,就能夠使第一遮罩台100在沿xy平面往返移動(沿x軸往返移動以及沿y軸往返移動)的同時,沿xy平面轉動(在z軸周圍順時針轉動或逆時針轉動)。As shown in FIG. 3, three or four motors (three in the double-sided lithography apparatus according to the embodiment) for supplying the driving force to the first mask stage 100 are set as servo motors. (Servo motors)) Sx11, Sx12, and Sy13 are respectively disposed near three corners of the four corners of the first mask stage 100 by selectively operating the three motors Sx11, Sx12, and Sy13 The first mask table 100 can be rotated along the xy plane (clockwise or counterclockwise around the z-axis) while reciprocating along the xy plane (reciprocating along the x-axis and reciprocating along the y-axis).

具體來說,藉由使電機Sx11或電機Sx12正方向轉動,就能夠使第一遮罩台100沿x軸向一個方向(第3圖中的左方向(x’方向))移動;藉由使電機Sx11或電機Sx12反方向轉動,就能夠使第一遮罩台100沿x軸向圖示的另一個方向(第3圖中的右方向(x方向))移動。Specifically, by rotating the motor Sx11 or the motor Sx12 in the forward direction, the first mask stage 100 can be moved in one direction (the left direction (x' direction) in FIG. 3) in the x-axis direction; When the motor Sx11 or the motor Sx12 rotates in the opposite direction, the first mask stage 100 can be moved in the other direction (the right direction (x direction) in FIG. 3) illustrated in the x-axis direction.

另外,藉由使電機Sy13正方向轉動,就能夠使第一遮罩台100沿y軸向一個方向(第3圖中的下方向(y’方向))移動;藉由使電機Sy13反方向轉動,就能夠使第一遮罩台100沿y軸向圖示的另一個方向(第3圖中的上方向(y方向))移動。Further, by rotating the motor Sy13 in the forward direction, the first mask stage 100 can be moved in one direction (the lower direction (y' direction) in FIG. 3) in the y-axis direction; by rotating the motor Sy13 in the reverse direction The first mask stage 100 can be moved in the other direction (upward direction (y direction) in FIG. 3) illustrated in the y-axis direction.

另外,藉由使電機Sx11、Sx12、以及Sy13同時正方向轉動相同的量,就能夠使第一遮罩台100以該第一遮罩台100未圖示的中心(空間部101的中心)為假設的轉動軸,在z軸周圍以逆時針方向(a’方向)轉動;藉由使電機Sx11、Sx12、以及Sy13同時反方向轉動相同的量,就能夠使第一遮罩台100以該第一遮罩台100未圖示的中心(空間部101的中心)為假設的轉動軸,沿xy平面在z軸周圍以順時針方向(a方向)轉動。Further, by rotating the motors Sx11, Sx12, and Sy13 in the same direction in the same direction, the first mask stage 100 can be made the center (the center of the space portion 101) not shown in the first mask stage 100. The assumed rotation axis is rotated counterclockwise (a' direction) around the z-axis; by rotating the motors Sx11, Sx12, and Sy13 in the opposite directions at the same time, the first mask table 100 can be made The center (the center of the space portion 101) not shown in the mask stage 100 is a hypothetical rotation axis, and rotates clockwise (a direction) around the z axis along the xy plane.

再有,要使第一遮罩台100沿該第一遮罩台的xy平面移動後,使該第一遮罩台100沿xy平面轉動規定的量時,則在保持第一遮罩台100的沿xy平面的移動量的狀態下沿xy平面轉動規定的量。另外,要使第一遮罩台100沿xy平面轉動規定的量後,使該第一遮罩台100沿xy平面移動規定的量時,則在保持第一遮罩台100的沿xy平面的轉動量的狀態下沿xy平面移動規定的量。Further, when the first mask stage 100 is moved along the xy plane of the first mask stage, and the first mask stage 100 is rotated by a predetermined amount along the xy plane, the first mask stage 100 is maintained. The amount of movement along the xy plane is rotated by a prescribed amount along the xy plane. In addition, when the first mask stage 100 is rotated by a predetermined amount along the xy plane, and the first mask stage 100 is moved by a predetermined amount along the xy plane, the first mask stage 100 is maintained along the xy plane. The predetermined amount is moved along the xy plane in the state of the amount of rotation.

另外,沿xy平面的移動也就是沿x軸方向或是沿y軸方向進行移動時的移動範圍(往返移動範圍)以及沿xy平面轉動時的轉動量(順時針方向或逆時針方向的轉動角度範圍)並不太大,在實施方式所涉及的雙面光刻裝置10中,作為往返移動範圍,例如為0至10mm程度即可,作為轉動角度範圍,例如為0至10度程度即可。不過,往返移動範圍以及轉動角度範圍並不被限定。In addition, the movement along the xy plane is the range of movement (reciprocating range) when moving in the x-axis direction or in the y-axis direction and the amount of rotation when rotating in the xy plane (clockwise or counterclockwise rotation angle) In the double-sided lithography apparatus 10 according to the embodiment, the reciprocating range is, for example, about 0 to 10 mm, and the rotation angle range is, for example, about 0 to 10 degrees. However, the range of the reciprocating movement and the range of the angle of rotation are not limited.

在第3圖中,雖然以電機為三個作為示例,但是也可以是在第一遮罩台100的四個角部附近分別設置電機。In the third drawing, although three motors are taken as an example, the motors may be provided in the vicinity of the four corners of the first mask stage 100.

另外,第二遮罩台200也同樣設置有用來給第二遮罩台200提供驅動力的三個或是四個(定為三個)電機(伺服電機),該三個電機(圖示雖省略但定為Sx21、Sx22、以及Sy23)與第一遮罩台100同樣分別被設置在第二遮罩台200的四個角部中的三個角部附近,藉由選擇性地運行該三個電機Sx21、Sx22、以及Sy23,就能夠使第二遮罩台200在沿xy平面往返移動(沿x軸往返移動以及沿y軸往返移動)的同時,沿xy平面轉動(在z軸周圍順時針轉動或逆時針轉動)。In addition, the second mask table 200 is also provided with three or four (three) motors (servo motors) for supplying the driving force to the second mask table 200. Omitted, but Sx21, Sx22, and Sy23) are disposed in the vicinity of the three corners of the four corners of the second mask stage 200, respectively, by selectively operating the three. Motors Sx21, Sx22, and Sy23 enable the second mask table 200 to rotate along the xy plane while moving back and forth along the xy plane (reciprocating along the x-axis and reciprocating along the y-axis) (around the z-axis) Hour hand or counterclockwise).

接下來,就第一遮罩M1與第二遮罩M2的對準以及第一遮罩M1以及第二遮罩M2與工件W的對準進行說明。Next, the alignment of the first mask M1 and the second mask M2 and the alignment of the first mask M1 and the second mask M2 with the workpiece W will be described.

第4圖是第一遮罩M1與第二遮罩M2的對準以及第一遮罩M1與工件W的對準的說明圖。第4圖中僅將用於就對準進行說明所必要的構成要素標示出,並模式化的進行圖示。其中,第4圖(a)為斜視圖,第4圖(b)為從上方沿z軸俯瞰第一遮罩M1的平面圖。4 is an explanatory view of the alignment of the first mask M1 and the second mask M2 and the alignment of the first mask M1 and the workpiece W. In Fig. 4, only the constituent elements necessary for the explanation of the alignment are indicated and graphically illustrated. 4(a) is a perspective view, and FIG. 4(b) is a plan view of the first mask M1 overlooking the z-axis from above.

另外,在第4圖中,第一遮罩M1上被矩形虛線所包圍的區域A1為對應被設置在第一遮罩安裝板120上的空間部121(參照第1圖以及第2圖)的區域,第二遮罩M2上被矩形虛線所包圍的區域A2為對應被設置在第二遮罩安裝板220上的空間部221(參照第1圖以及第2圖)的區域。In addition, in FIG. 4, the area A1 surrounded by the rectangular broken line on the first mask M1 corresponds to the space portion 121 (see FIG. 1 and FIG. 2) provided on the first mask mounting plate 120. In the region, the region A2 surrounded by the rectangular dotted line on the second mask M2 is a region corresponding to the space portion 221 (see FIGS. 1 and 2) provided on the second mask mounting plate 220.

第一遮罩M1以及第二遮罩M2上分別設有用於該第一遮罩M1與第二遮罩M2對準的遮罩對準標記。該遮罩對準標記在第一遮罩M1上的相互隔開的規定位置上設置m處(m為大於等於2的整數)。在第二遮罩M2上的相互隔開的規定位置上與第一遮罩M1上設置的m處遮罩對準標記相對應地設置m處。A mask alignment mark for alignment of the first mask M1 and the second mask M2 is respectively disposed on the first mask M1 and the second mask M2. The mask alignment marks are provided at positions m (m is an integer of 2 or more) at predetermined positions spaced apart from each other on the first mask M1. At a predetermined position spaced apart from each other on the second mask M2, m is disposed corresponding to the mask alignment mark at m provided on the first mask M1.

在實施方式所涉及的雙面光刻裝置10中,以m=2進行說明。因此,將第一遮罩M1上設置的兩處遮罩對準標記定為「遮罩對準標記P1、P2」;將第二遮罩M2上設置的兩處遮罩對準標記定為「遮罩對準標記P3、P4」。In the double sided lithography apparatus 10 according to the embodiment, description will be made with m=2. Therefore, the two mask alignment marks provided on the first mask M1 are defined as "mask alignment marks P1, P2"; the two mask alignment marks set on the second mask M2 are defined as " The mask is aligned with the marks P3, P4".

具體來說,在第一遮罩M1側,例如,在該第一遮罩M1的對角的兩個角部中的一方的角部的內側設置有遮罩對準標記P1;在另一方的角部的內側設置有遮罩對準標記P2。另外,在第二遮罩M2側,在第二遮罩M2的對角的兩個角部中的,一方的角部(對應第一遮罩M1上設置有遮罩對準標記P1的角部的角部)的內側設置有遮罩對準標記P3;另一方的角部(對應第一遮罩M1上設置有遮罩對準標記P2的角部的角部)的內側設置有遮罩對準標記P4。Specifically, on the side of the first mask M1, for example, a mask alignment mark P1 is provided inside the corners of one of the two corners of the diagonal of the first mask M1; A mask alignment mark P2 is provided on the inner side of the corner. Further, on the second mask M2 side, one of the two corner portions of the diagonal of the second mask M2 is provided with a corner portion of the mask alignment mark P1 corresponding to the first mask M1. The inside of the corner portion is provided with a mask alignment mark P3; and the other corner portion (corresponding to a corner portion of the corner portion of the first mask M1 on which the mask alignment mark P2 is provided) is provided with a mask pair Pre-marked P4.

當第一遮罩M1的遮罩對準標記P1與第二遮罩M2的遮罩對準標記P3一致,並且,當第一遮罩M1的遮罩對準標記P2與第二遮罩M2的遮罩對準標記P4一致時,則定為第一遮罩M1與第二遮罩M2被適宜地進行了對準。When the mask alignment mark P1 of the first mask M1 coincides with the mask alignment mark P3 of the second mask M2, and when the mask of the first mask M1 is aligned with the mark P2 and the second mask M2 When the mask alignment marks P4 coincide, it is determined that the first mask M1 and the second mask M2 are properly aligned.

遮罩對準標記P1、P2被設置在:第一遮罩M1上被虛線矩形框所包圍的區域A1(對應空間部121的區域)內,並且是離開工件W的第一面Wa上的當前光刻物件區域(第4圖(b)中以灰色標記的區域B1)。另一方面,遮罩對準標記P3、P4被設置在:第二遮罩M2上被虛線矩形框所包圍的區域A2(對應空間部221的區域)內,並且是離開工件W的第二面Wb上的當前光刻物件區域(第二面Wb上同樣為第4圖(b)中以灰色標記的區域B1)。再有,在實施方式所涉及的雙面光刻裝置10中,將「離開光刻物件區域的位置」定為:當將工件W如第1圖以及第2圖所示般安裝時,離開該工件W的寬度方向的位置。The mask alignment marks P1, P2 are disposed in the area A1 (the area corresponding to the space portion 121) surrounded by the dotted rectangular frame on the first mask M1, and are present on the first side Wa of the workpiece W. Photolithographic object area (area B1 marked in gray in Fig. 4(b)). On the other hand, the mask alignment marks P3, P4 are disposed in the area A2 (the area corresponding to the space portion 221) surrounded by the dotted rectangular frame on the second mask M2, and are the second side away from the workpiece W. The current lithographic object area on Wb (the second side Wb is also the area B1 marked in gray in Fig. 4(b)). Further, in the double-sided lithography apparatus 10 according to the embodiment, the "position away from the lithographic article region" is defined such that when the workpiece W is mounted as shown in FIGS. 1 and 2, the separation is performed. The position of the workpiece W in the width direction.

另外,用於第一遮罩M1以及第二遮罩M2與工件W對準的工件對準標記,被分別設置在第一遮罩M1和工件W上。工件對準標記在第一遮罩M1上的相互隔開的規定位置上設置有n處(n為大於等於2的整數),並且在工件上的相互隔開的規定位置上與第一遮罩M1上設置的n處工件對準標記相對應地設置有n處。Further, workpiece alignment marks for the first mask M1 and the second mask M2 aligned with the workpiece W are respectively disposed on the first mask M1 and the workpiece W. The workpiece alignment marks are provided at n spaced apart predetermined positions on the first mask M1 (n is an integer greater than or equal to 2), and are spaced apart from the first mask at predetermined positions on the workpiece The workpiece alignment marks at n set on M1 are correspondingly set at n places.

在實施方式所涉及的雙面光刻裝置10中,以n=2進行說明。因此,將第一遮罩M1上設置的兩處工件對準標記定為「工件對準標記P5、P6」;將第二遮罩M2上設置的兩處工件對準標記定為「工件對準標記P7、P8」。In the double sided lithography apparatus 10 according to the embodiment, description will be made with n=2. Therefore, the two workpiece alignment marks set on the first mask M1 are defined as "workpiece alignment marks P5, P6"; the two workpiece alignment marks set on the second mask M2 are defined as "workpiece alignment" Mark P7, P8".

當第一遮罩M1的工件對準標記P5與工件W的工件對準標記P7一致,並且,當第一遮罩M1的工件對準標記P6與工件W的工件對準標記P8一致時,則定為第一遮罩M1與工件W被適宜地進行了對準。再有,這些工件對準標記P5、P6被設置在第一遮罩M1上的被虛線矩形框所包圍的區域A1(對應空間部121的區域)內。When the workpiece alignment mark P5 of the first mask M1 coincides with the workpiece alignment mark P7 of the workpiece W, and when the workpiece alignment mark P6 of the first mask M1 coincides with the workpiece alignment mark P8 of the workpiece W, The first mask M1 and the workpiece W are suitably aligned. Further, these workpiece alignment marks P5 and P6 are provided in the area A1 (the area corresponding to the space portion 121) surrounded by the dotted rectangular frame on the first mask M1.

不過,第一遮罩M1與第二遮罩M2的位置是否一致以及第一遮罩M1與工件W的位置是否一致,則是根據攝像裝置對各個對準標記(遮罩對準標記P1至P4以及工件對準標記P5至P8)進行攝像後獲得的攝像資料來進行判斷。However, whether the positions of the first mask M1 and the second mask M2 coincide with each other and whether the positions of the first mask M1 and the workpiece W are identical are based on the respective alignment marks of the image pickup device (mask alignment marks P1 to P4). And the image data obtained after the workpiece alignment marks P5 to P8 are imaged to determine.

在實施方式所涉及的雙面光刻裝置10中,攝像裝置C具有:用於對遮罩對準標記P1、P3以及對工件對準標記P5、P7有時間差地進行攝像的攝像裝置C1;以及用於對遮罩對準標記P2、P4以及對工件對準標記P6、P8有時間差地進行攝像的攝像裝置C2。In the double lithography apparatus 10 according to the embodiment, the imaging apparatus C includes imaging means C1 for imaging the mask alignment marks P1, P3 and the workpiece alignment marks P5, P7 with a time difference; An imaging device C2 for capturing the mask alignment marks P2 and P4 and the workpiece alignment marks P6 and P8 with a time difference.

具體來說,攝像裝置C1(也稱為攝像機(Camera)C1)是用於對設置在第一遮罩M1上的遮罩對準標記P1與設置在第二遮罩M2上的遮罩對準標記P3進行攝像的同時,對設置在第一遮罩M1上的工件對準標記P5與設置在工件W上的工件對準標記P7進行攝像的裝置;攝像裝置C2(也稱為攝像機C2)是用於對設置在第一遮罩M1上的遮罩對準標記P2與設置在第二遮罩M2上的遮罩對準標記P4進行攝像的同時,對設置在第一遮罩M1上的工件對準標記P6與設置在工件W上的工件對準標記P8進行攝像的裝置。Specifically, the camera C1 (also referred to as a camera C1) is for aligning the mask alignment mark P1 disposed on the first mask M1 with the mask disposed on the second mask M2. While the image P3 is being imaged, the workpiece alignment mark P5 provided on the first mask M1 and the workpiece alignment mark P7 provided on the workpiece W are imaged; the image pickup device C2 (also referred to as the camera C2) is For photographing the mask alignment mark P2 disposed on the first mask M1 and the mask alignment mark P4 disposed on the second mask M2, the workpiece disposed on the first mask M1 A device for imaging the alignment mark P6 and the workpiece alignment mark P8 provided on the workpiece W.

再有,攝像機C1有時間差地對遮罩對準標記P1以及遮罩對準標記P3,並且對工件對準標記P5以及工件對準標記P7進行攝像;攝像機C2有時間差地對遮罩對準標記P2以及遮罩對準標記P4,並且對工件對準標記P6以及工件對準標記P8進行攝像。因此,攝像機C1、C2能夠:沿xy平面移動、在z軸周圍轉動、以及沿z軸上下移動。用於使攝像機C1、C2沿xy平面移動、在z軸周圍轉動、以及沿z軸上下移動的驅動構造由於可以藉由公知的技術來實現,因此省略了圖示以及說明。Further, the camera C1 has a time difference to the mask alignment mark P1 and the mask alignment mark P3, and images the workpiece alignment mark P5 and the workpiece alignment mark P7; the camera C2 has a time difference to the mask alignment mark P2 and the mask are aligned with the mark P4, and the workpiece alignment mark P6 and the workpiece alignment mark P8 are imaged. Therefore, the cameras C1, C2 can move along the xy plane, rotate around the z-axis, and move up and down along the z-axis. The driving structure for moving the cameras C1 and C2 along the xy plane, rotating around the z-axis, and moving up and down along the z-axis can be realized by a known technique, and thus the illustration and description are omitted.

第5圖是實施方式所涉及的雙面光刻裝置10中的對準控制裝置500以及攝像裝置移動控制裝置600的說明圖。對準控制裝置500如第5圖所示,包括:第一遮罩台驅動控制部510,藉由控制第一遮罩台100的電機Sx11、Sx12、以及Sy13從而對第一遮罩台100進行驅動;第二遮罩台驅動控制部520,藉由控制第二遮罩台200的電機(未圖示的Sx21、Sx22、以及Sy23)從而對第二遮罩台200進行驅動;以及控制部530,根據來自於攝像裝置C(攝像機C1、C2)的攝像資料,向第一遮罩台驅動控制部510以及第二遮罩台驅動控制部520中的至少一方提供控制資料。FIG. 5 is an explanatory diagram of the alignment control device 500 and the imaging device movement control device 600 in the double-sided lithography apparatus 10 according to the embodiment. As shown in FIG. 5, the alignment control device 500 includes a first mask stage drive control unit 510 that controls the first mask stage 100 by controlling the motors Sx11, Sx12, and Sy13 of the first mask stage 100. Driving; the second mask stage driving control unit 520 drives the second mask stage 200 by controlling motors (Sx21, Sx22, and Sy23 (not shown) of the second mask stage 200; and the control unit 530 The control data is supplied to at least one of the first mask stage drive control unit 510 and the second mask stage drive control unit 520 based on the imaging data from the imaging device C (cameras C1 and C2).

被像上述這樣構成的對準控制裝置500具有如下功能:根據獲得的來自於攝像機C1、C2的攝像資料,控制第二遮罩台200從而使分別設置在第一遮罩M1和第二遮罩M2上的遮罩對準標記一致(遮罩對準標記P1與P3一致,並且遮罩對準標記P2與P4一致)的同時,控制第一遮罩台100從而使分別設置在第一遮罩M1和工件W上的工件對準標記一致(工件對準標記P5與P7一致,並且工件對準標記P6與P8一致)。The alignment control device 500 configured as described above has a function of controlling the second mask table 200 so as to be disposed in the first mask M1 and the second mask, respectively, based on the obtained image data from the cameras C1, C2. While the mask alignment marks on M2 are identical (the mask alignment marks P1 and P3 coincide, and the mask alignment marks P2 coincide with P4), the first mask stage 100 is controlled so as to be respectively disposed in the first mask M1 is aligned with the workpiece alignment mark on the workpiece W (the workpiece alignment marks P5 coincide with P7, and the workpiece alignment marks P6 coincide with P8).

具體來說,藉由攝像機C1、C2獲得的攝像資料被提供給控制部530後,控制部530根據該攝像資料向第二遮罩台驅動控制部520提供控制資料從而使遮罩對準標記P1與P3一致,並且遮罩對準標記P2與P4一致。第二遮罩台驅動控制部520則根據控制資料對電機Sx21、Sx22、以及Sy23進行選擇性地驅動。藉由這樣,就能夠進行第一遮罩M1與第二遮罩M2的對準。Specifically, after the image data obtained by the cameras C1 and C2 is supplied to the control unit 530, the control unit 530 supplies the control data to the second mask stage drive control unit 520 based on the image data to make the mask alignment mark P1. Consistent with P3, and the mask alignment marks P2 coincide with P4. The second mask stage drive control unit 520 selectively drives the motors Sx21, Sx22, and Sy23 based on the control data. By doing so, alignment of the first mask M1 and the second mask M2 can be performed.

遮罩對準標記P1與P3一致,並且遮罩對準標記P2與P4一致後,移動攝像機C1、C2,對工件對準標記P5以及工件對準標記P7進行攝像的同時,對工件對準標記P6以及工件對準標記P8進行攝像。此時,再將藉由攝像機C1、C2獲得的攝像資料提供給控制部530後,控制部530根據該攝像資料向第一遮罩台驅動控制部510提供控制資料從而使工件對準標記P5與P7一致,並且工件對準標記P6與P8一致。第一遮罩台驅動控制部510則根據來自於控制部530的控制資料對電機Sx11、Sx12、以及Sy13進行選擇性地驅動。藉由這樣,就能夠進行第一遮罩M1與工件W的對準。The mask alignment marks P1 and P3 coincide with each other, and after the mask alignment marks P2 and P4 coincide, the cameras C1 and C2 are moved, the workpiece alignment mark P5 and the workpiece alignment mark P7 are imaged, and the workpiece alignment marks are aligned. P6 and the workpiece alignment mark P8 perform imaging. At this time, after the image data obtained by the cameras C1 and C2 is supplied to the control unit 530, the control unit 530 supplies the control data to the first mask stage drive control unit 510 based on the image data so that the workpiece alignment mark P5 and P7 is identical and the workpiece alignment marks P6 coincide with P8. The first mask stage drive control unit 510 selectively drives the motors Sx11, Sx12, and Sy13 based on the control data from the control unit 530. By doing so, alignment of the first mask M1 with the workpiece W can be performed.

藉由這樣的對準控制裝置500,就能夠對第一遮罩M1與第二遮罩M2進行對準的同時,對第一遮罩M1與工件W進行對準。再有,在進行第一遮罩M1與工件W的對準時,由於第二遮罩M2也會與第一遮罩M1同方向移動和轉動相同的量,因此在第一遮罩M1與第二遮罩M2完成對準的狀態下,來進行第一遮罩M1與工件W的對準的話,第二遮罩M2便會在第一遮罩M1與第二遮罩M2位置關係保持不變的情況下,被與工件W對準。With such an alignment control device 500, the first mask M1 and the second mask M2 can be aligned, and the first mask M1 and the workpiece W can be aligned. Further, when the alignment of the first mask M1 and the workpiece W is performed, since the second mask M2 is also moved and rotated by the same amount in the same direction as the first mask M1, the first mask M1 and the second When the mask M2 is aligned, the alignment of the first mask M1 and the workpiece W is performed, and the second mask M2 maintains the positional relationship between the first mask M1 and the second mask M2. In this case, it is aligned with the workpiece W.

而這,正是由於如下構成所帶來的結果:第二遮罩台200載置在第一遮罩台100上,並且能夠在該第一遮罩台100上除該第一遮罩台100之外沿xy平面移動的同時沿xy平面轉動,當第一遮罩台100沿xy平面移動時,則第二遮罩台200隨該第一遮罩台100一同在xy平面上以相同方向移動相同的量,當第一遮罩台100沿xy平面轉動時,則第二遮罩台200隨該第一遮罩台100一同在xy平面上以相同方向轉動相同的量。This is because of the result of the configuration in which the second mask stage 200 is placed on the first mask stage 100, and the first mask stage 100 can be removed from the first mask stage 100. When the first mask stage 100 moves along the xy plane while moving along the xy plane, the second mask stage 200 moves in the same direction on the xy plane along with the first mask stage 100. The same amount, when the first mask stage 100 is rotated along the xy plane, the second mask stage 200 is rotated by the same amount in the same direction on the xy plane as the first mask stage 100.

接下來,對攝像裝置移動控制裝置600進行說明。攝像裝置移動控制裝置600具有:用於使攝像機C1、C2移動的移動構造部610;以及用於控制該移動構造部610的移動控制部620。該攝像裝置移動控制裝置600更具備至少在光刻時控制攝像機C1、C2移動從而使攝像機C1、C2的位置位於離開工件W上的光刻物件區域B1的位置上的功能。藉由這樣,由於攝像機C1、C2的位置位於離開工件W上的光刻物件區域B1的位置上,因此在進行光刻時,就能夠防止攝像機C1、C2遮擋來自於光源310、320的光。Next, the imaging device movement control device 600 will be described. The imaging device movement control device 600 includes a movement structure unit 610 for moving the cameras C1 and C2, and a movement control unit 620 for controlling the movement structure unit 610. The image pickup device movement control device 600 further has a function of controlling the movement of the cameras C1, C2 at least during photolithography so that the positions of the cameras C1, C2 are located away from the position of the lithographic article region B1 on the workpiece W. Thus, since the positions of the cameras C1, C2 are located away from the lithographic article area B1 on the workpiece W, it is possible to prevent the cameras C1, C2 from blocking the light from the light sources 310, 320 during photolithography.

再有,在實施方式所涉及的雙面光刻裝置10中,是設定為:攝像機C1、C2位於可對遮罩對準標記P1、P2進行攝像的位置上的狀態時,攝像機C1、C2位於離開光刻物件區域B1的位置上。因此,預先使攝像機C1、C2可在箭頭y-y’方向上移動,在光刻時,控制攝像機C1、C2先朝y’方向移動後,再移動至可對遮罩對準標記P1、P2進行攝像的位置。Further, in the double lithography apparatus 10 according to the embodiment, when the cameras C1 and C2 are located at positions where the mask alignment marks P1 and P2 can be imaged, the cameras C1 and C2 are located. Leaving the position of the lithography object area B1. Therefore, the cameras C1 and C2 can be moved in the direction of the arrow y-y' in advance. During the photolithography, the control cameras C1 and C2 are moved in the y' direction, and then moved to the mask alignment marks P1 and P2. The location where the camera is taken.

如上述說明,在實施方式所涉及的雙面光刻裝置10中,第二遮罩台200載置在第一遮罩台100上,並且能夠在該第一遮罩台100上除該第一遮罩台100之外沿xy平面移動的同時沿xy平面轉動,當第一遮罩台100沿xy平面移動時,則第二遮罩台200隨該第一遮罩台100一同在xy平面上以相同方向移動相同的量,當第一遮罩台100沿xy平面轉動時,則第二遮罩台200隨該第一遮罩台100一同在xy平面上以相同方向轉動相同的量。As described above, in the double sided lithography apparatus 10 according to the embodiment, the second mask stage 200 is placed on the first mask stage 100, and the first mask stage 100 can be removed from the first mask stage 100. The mask stage 100 rotates along the xy plane while moving along the xy plane. When the first mask stage 100 moves along the xy plane, the second mask stage 200 is along with the first mask stage 100 on the xy plane. Moving the same amount in the same direction, when the first mask stage 100 is rotated along the xy plane, the second mask stage 200 is rotated by the same amount in the same direction on the xy plane as the first mask stage 100.

正因為實施方式所涉及的雙面光刻裝置10為這樣的構成,所以在配置於工件W的第一面Wa側的第一遮罩M1與配置第二面Wb側的第二遮罩M2完成對準後,在進行第一遮罩M1以及第二遮罩M2與工件W的對準時,能夠在不使工件W移動和轉動的情況下,在第一遮罩M1與第二遮罩M2位置關係保持不變的情況下,進行第一遮罩M1以及第二遮罩M2與工件W的對準。藉由這樣,就沒有必要將用於在工件W一側的平面上進行移動和轉動的構造組配進工件的輸送構造中,也就不會使工件的輸送構造複雜化,另外,由於不會使工件W產生褶皺或扭曲,因此能夠實現高品質的雙面光刻。Since the double-sided lithography apparatus 10 according to the embodiment has such a configuration, the first mask M1 disposed on the first surface Wa side of the workpiece W and the second mask M2 disposed on the second surface Wb side are completed. After the alignment, when the first mask M1 and the second mask M2 are aligned with the workpiece W, the first mask M1 and the second mask M2 can be positioned without moving and rotating the workpiece W. When the relationship remains unchanged, the alignment of the first mask M1 and the second mask M2 with the workpiece W is performed. In this way, it is not necessary to fit the structure for moving and rotating on the plane of the workpiece W into the conveying structure of the workpiece, so that the conveying structure of the workpiece is not complicated, and since The workpiece W is wrinkled or twisted, so that high-quality double-sided lithography can be realized.

接下來,對實施方式所涉及的雙面光刻裝置10中的遮罩與工件的對準方法進行說明。Next, a method of aligning the mask and the workpiece in the double lithography apparatus 10 according to the embodiment will be described.

第6圖是遮罩與工件進行對準時的各步驟的流程說明圖。首先,將第一遮罩M1安裝至第一遮罩安裝板120的同時,將第二遮罩M2安裝至第二遮罩安裝板220(步驟S1)。Fig. 6 is a flow explanatory diagram of each step when the mask is aligned with the workpiece. First, while the first mask M1 is attached to the first mask mounting plate 120, the second mask M2 is attached to the second mask mounting plate 220 (step S1).

並且,在第一遮罩台100上,藉由對第二遮罩台200進行沿xy平面移動以及沿xy平面轉動中的至少一方,來進行第一遮罩M1與第二遮罩M2對準的遮罩對準步驟(步驟S2)。在實施方式所涉及的雙面光刻裝置10中的遮罩與工件的對準方法中,在進行遮罩對準步驟時,工件W未被配置在第一遮罩M1與第二遮罩M2之間。不過,即便是在將工件W配置在第一遮罩M1與第二遮罩M2之間的狀態下,也能夠實施該遮罩對準步驟。And, on the first mask stage 100, the first mask M1 and the second mask M2 are aligned by performing at least one of moving along the xy plane and rotating along the xy plane of the second mask stage 200. The mask alignment step (step S2). In the method of aligning the mask and the workpiece in the double lithography apparatus 10 according to the embodiment, the workpiece W is not disposed in the first mask M1 and the second mask M2 in the mask alignment step. between. However, even in a state where the workpiece W is disposed between the first mask M1 and the second mask M2, the mask alignment step can be performed.

進行遮罩對準步驟時的控制,是由對準控制裝置500根據來自於攝像機C1、C2的攝像資料進行的。此時,攝像機C1、C2在可對遮罩對準標記P1、P2進行攝像的位置上進行攝像。再有,由於對準控制裝置500所進行的對準控制如前所述,因此其說明在此處省略。藉由進行該遮罩對準步驟,就會將第一遮罩M1與第二遮罩M2對準。The control at the time of performing the mask alignment step is performed by the alignment control device 500 based on the image data from the cameras C1 and C2. At this time, the cameras C1 and C2 image at positions where the mask alignment marks P1 and P2 can be imaged. Further, since the alignment control by the alignment control device 500 is as described above, the description thereof is omitted here. By performing the mask alignment step, the first mask M1 is aligned with the second mask M2.

接下來,藉由對第一遮罩台100進行沿xy平面移動以及沿xy平面轉動中的至少一方,來進行第一遮罩M1與工件W對準的遮罩與工件對準步驟(步驟S3)。在進行遮罩與工件對準步驟時,定為工件W被配置在第一遮罩M1與第二遮罩M2之間的狀態。另外,攝像機C1、C2已移動至可對遮罩對準標記P5、P6進行攝像的位置上。Next, the mask and workpiece alignment step of the first mask M1 and the workpiece W is performed by performing at least one of moving along the xy plane and rotating along the xy plane of the first mask stage 100 (step S3) ). When the mask and workpiece alignment step is performed, the workpiece W is placed in a state between the first mask M1 and the second mask M2. In addition, the cameras C1, C2 have moved to a position where the mask alignment marks P5, P6 can be imaged.

另外,進行遮罩與工件對準步驟時的控制,與遮罩對準步驟一樣,也是由對準控制裝置500根據來自於攝像機C1、C2的攝像資料進行的。由於對準控制裝置500所進行的第一遮罩M1與工件W的對準控制如前所述,因此其說明在此處省略。藉由進行該遮罩與工件對準步驟,就會將第一遮罩M1與工件W對準。Further, the control in the step of aligning the mask with the workpiece is performed by the alignment control device 500 based on the image data from the cameras C1 and C2 as in the mask alignment step. Since the alignment control of the first mask M1 and the workpiece W by the alignment control device 500 is as described above, the description thereof is omitted here. By performing the mask and workpiece alignment step, the first mask M1 is aligned with the workpiece W.

藉由依次進行上述的遮罩對準步驟以及遮罩與工件對準步驟,在第一遮罩M1與第二遮罩M2進行對準的同時,在第一遮罩與第二遮罩位置關係保持不變的情況下,第一遮罩M1與工件W以及第二遮罩M2與工件W就會被分別對準。By sequentially performing the above-described mask alignment step and the mask and workpiece alignment step, the first mask M1 and the second mask M2 are aligned while the first mask and the second mask are in positional relationship The first mask M1 and the workpiece W and the second mask M2 and the workpiece W are respectively aligned while remaining unchanged.

而且,藉由在規定的時間點點亮光源310、320,第一遮罩M1上形成的電路圖型就會在工件W的第一面Wa的合適的位置上被光刻;第二遮罩M2上形成的電路圖型就會在工件W的第二面Wb的合適的位置上被光刻。再有,在進行光刻時,攝像機C1、C2被藉由攝像裝置移動控制裝置600控制為位於離開光刻物件區域B1的位置上(在工件W上為位於離開B1的位置上,並且在實施方式所涉及的雙面光刻裝置10中為可對遮罩對準標記P1、P2進行攝像的位置上)上。Moreover, by lighting the light sources 310, 320 at a prescribed time point, the circuit pattern formed on the first mask M1 is photolithographically applied at a suitable position on the first side Wa of the workpiece W; the second mask M2 The circuit pattern formed thereon is photolithographically placed at a suitable location on the second side Wb of the workpiece W. Further, during photolithography, the cameras C1, C2 are controlled by the camera movement control device 600 to be located away from the lithographic article region B1 (on the workpiece W, at a position away from B1, and implemented In the double lithography apparatus 10 according to the aspect, the mask alignment marks P1 and P2 can be imaged.

在實施方式所涉及的雙面光刻裝置10中,由於是以使長條片狀的工件W以卷對卷方式在一個方向上行進的過程中來進行雙面光刻的情況來作為示例的,因此沿在一個方向上行進的工件W的長度方向設定的多個光刻物件區域中的每個光刻物件區域依次位於與雙面光刻裝置10的第一遮罩M1以及第二遮罩M2相對的位置上。The double-sided lithography apparatus 10 according to the embodiment is exemplified by a case where double-sided lithography is performed in a process in which a long sheet-like workpiece W travels in one direction in a roll-to-roll manner. Therefore, each of the plurality of lithographic article regions set along the length direction of the workpiece W traveling in one direction is sequentially located with the first mask M1 and the second mask of the double lithography apparatus 10 M2 is in the opposite position.

此時,在對某一個光刻物件進行光刻後,在下一個光刻物件位於與第一遮罩M1以及第二遮罩M2相對的位置上時,每當第一遮罩M1與第二遮罩M2進行對準、第一遮罩M1與工件W進行對準時,在第6圖中所示的流程中,一旦步驟S3結束後,就會如第6圖中的虛線R1所示進行返回步驟S2的處理。藉由這樣,就能夠在每個光刻物件區域上,進行第一遮罩M1與第二遮罩M2的對準,以及第一遮罩M1與工件W的對準。At this time, after photolithography of a certain lithography article, whenever the next lithography article is located opposite to the first mask M1 and the second mask M2, whenever the first mask M1 and the second mask When the cover M2 is aligned and the first mask M1 is aligned with the workpiece W, in the flow shown in FIG. 6, once the step S3 is completed, the return step is performed as indicated by the broken line R1 in FIG. Processing of S2. By doing so, alignment of the first mask M1 with the second mask M2 and alignment of the first mask M1 with the workpiece W can be performed on each of the lithographic article regions.

另外,只要將藉由第一遮罩M1與第二遮罩M2的對準(步驟S2)獲得的第一遮罩M1與第二遮罩M2位置關係進行固定,就能夠在不需要每次都對第一遮罩M1與第二遮罩M2進行對準的情況下,在第6圖中所示的流程中,如第6圖中虛線R2所示般對每個光刻物件區域重複進行步驟S3。藉由這樣,就能夠在每個光刻物件區域上,在第一遮罩M1與第二遮罩M2位置關係保持不變的情況下,進行第一遮罩M1與工件W的對準。In addition, as long as the positional relationship between the first mask M1 and the second mask M2 obtained by the alignment of the first mask M1 and the second mask M2 (step S2) is fixed, it is possible to In the case where the first mask M1 and the second mask M2 are aligned, in the flow shown in FIG. 6, steps are repeated for each of the lithographic object regions as indicated by a broken line R2 in FIG. S3. By doing so, alignment of the first mask M1 with the workpiece W can be performed on each of the lithographic article regions while the positional relationship of the first mask M1 and the second mask M2 remains unchanged.

在實施方式所涉及的雙面光刻裝置10中遮罩與工件的對準方法中,由於作為雙面光刻裝置,使用的也是實施方式所涉及雙面光刻裝置10,因此能夠獲得與實施方式所涉及的雙面光刻裝置10同樣的效果。In the double-sided lithography apparatus 10 according to the embodiment, in the method of aligning the mask with the workpiece, since the double-sided lithography apparatus 10 according to the embodiment is used as the double-sided lithography apparatus, it can be obtained and implemented. The double lithography apparatus 10 according to the aspect has the same effect.

再有,本發明不限於上述實施方式,只要不脫離本發明主旨範圍的情況下可實施各種變形。例如,可實施如下的變形。Further, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit and scope of the invention. For example, the following modifications can be implemented.

(1)在上述實施方式中,用於對遮罩對準標記以及工件對準標記進行攝像的攝像機C1、C2雖然以設置在第一遮罩M1側時為例進行了說明,但是也可以為攝像機C1、C2設置在第二遮罩M2側的構成。另外,也可以是在第一遮罩M1側以及第二遮罩M2側都設置攝像機,從而根據從各處的攝像機獲得的攝像圖像資料來對第一遮罩M1與第二遮罩M2進行對準的同時,對第一遮罩M1以及第二遮罩M2與工件W進行對準。(1) In the above embodiment, the cameras C1 and C2 for capturing the mask alignment mark and the workpiece alignment mark are described as being provided on the first mask M1 side, but may be The cameras C1 and C2 are disposed on the second mask M2 side. In addition, a camera may be disposed on both the first mask M1 side and the second mask M2 side to perform the first mask M1 and the second mask M2 based on the captured image data obtained from the cameras of the respective places. At the same time of alignment, the first mask M1 and the second mask M2 are aligned with the workpiece W.

(2)在上述實施方式中,第一遮罩M1與第二遮罩M2的對準、以及第一遮罩M1與工件W的對準,雖然以使用相同的攝像機C1、C2有時間差地進行攝像來進行示例說明,但是也可以分別對應設置在第一遮罩M1上的兩處遮罩對準標記P1、P2(在第二遮罩M2上則為遮罩對準標記P3、P4)設置兩台攝像機,同時,分別對應設置在第一遮罩M1上的兩處工件對準標記P5、P6(在工件W上則為工件對準標記P7、P8)設置兩台攝像機,從而根據從各處的攝像機獲得的攝像資料來進行第一遮罩M1與第二遮罩M2的對準、以及第一遮罩M1與工件W的對準。此情況下,在光刻時控制各個攝像機進行回避使其位於離開光刻物件區域的位置上。(2) In the above embodiment, the alignment of the first mask M1 and the second mask M2, and the alignment of the first mask M1 and the workpiece W are performed with time difference using the same cameras C1 and C2. The imaging is described as an example, but the two mask alignment marks P1 and P2 (the mask alignment marks P3 and P4 on the second mask M2) may be respectively set corresponding to the first mask M1. Two cameras are simultaneously provided with two cameras corresponding to the two workpiece alignment marks P5 and P6 (the workpiece alignment marks P7 and P8 on the workpiece W) corresponding to the first mask M1, thereby The camera data obtained by the camera at the location performs alignment of the first mask M1 with the second mask M2, and alignment of the first mask M1 with the workpiece W. In this case, each camera is controlled to evade at the position away from the lithography object area during lithography.

(3)在上述實施方式中,用於第一遮罩M1以及第二遮罩M2與工件W進行對準的工件對準標記P5、P6雖然在遮罩側是設置在了第一遮罩M1上,但是也可以設置在第二遮罩M2上,也可以在第一遮罩M1以及第二遮罩M2上都進行設置。再有,即便是用於第一遮罩M1以及第二遮罩M2與工件W進行對準的工件對準標記P5、P6設置在第二遮罩M2上時,在進行與工件W之間的對準時,也是藉由第一遮罩台100的移動來進行第一遮罩M1以及第二遮罩M2與工件W的對準。(3) In the above embodiment, the workpiece alignment marks P5 and P6 for aligning the first mask M1 and the second mask M2 with the workpiece W are disposed on the first mask M1 on the mask side. Upper, but it may be provided on the second mask M2, or may be provided on both the first mask M1 and the second mask M2. Further, even when the workpiece alignment marks P5, P6 for aligning the first mask M1 and the second mask M2 with the workpiece W are disposed on the second mask M2, between the workpiece W and the workpiece W In alignment, alignment of the first mask M1 and the second mask M2 with the workpiece W is also performed by the movement of the first mask table 100.

(4)在上述實施方式中,用於第一遮罩M1與第二遮罩M2對準的遮罩對準標記雖然在第一遮罩M1以及第二遮罩M2上分別設置有兩處,但是不限於兩處,也可以是大於等於三處。同樣的,用於第一遮罩M1與工件W對準的工件對準標記雖然在第一遮罩M1以及工件W上分別設置有兩處,但是不限於兩處,也可以是大於等於三處。(4) In the above embodiment, the mask alignment marks for aligning the first mask M1 with the second mask M2 are respectively provided at two places on the first mask M1 and the second mask M2. However, it is not limited to two places, and may be three or more. Similarly, the workpiece alignment marks for aligning the first mask M1 with the workpiece W are respectively provided at two places on the first mask M1 and the workpiece W, but are not limited to two places, and may be three or more. .

(5)在上述實施方式中,雖然是以如下構成的雙面光刻裝置進行了示例說明:對水準方向放置的工件W分別從上下方向進行光照射從而對該工件進行光刻。但是不限於此,例如可以是如下構成的雙面光刻裝置:對垂直方向放置的工件W分別從左右方向進行光照射從而對該工件進行光刻。(5) In the above embodiment, the double-sided lithography apparatus having the following configuration is exemplified: the workpiece W placed in the horizontal direction is irradiated with light from the vertical direction to lithography the workpiece. However, the present invention is not limited thereto. For example, the double-sided lithography apparatus may be configured such that the workpiece W placed in the vertical direction is irradiated with light from the left and right directions to lithography the workpiece.

(6)第1圖以及第2圖所示的雙面光刻裝置10的構成僅為一例,其構成並不限於第1圖以及第2圖所示的構成,例如,也可以為第7圖所示的構成。(6) The configuration of the double-sided lithography apparatus 10 shown in FIG. 1 and FIG. 2 is merely an example, and the configuration is not limited to the configuration shown in FIG. 1 and FIG. 2, and may be, for example, FIG. The composition shown.

第7圖是實施方式所涉及的雙面光刻裝置10的變形例的說明圖。再有,第7圖是實施方式所涉及的雙面光刻裝置10的變形例(定為雙面光刻裝置10’)的正面圖,並且是與第2圖對應的圖。第7圖中與第1圖相同的構成要素被附上了同一符號。還有,在第7圖中,在將工件W安裝至該雙面光刻裝置10’時,將該工件W的圖示下麵側定為第一面Wa,將該工件W的圖示上面側定為第二面Wb。Fig. 7 is an explanatory diagram of a modification of the double photographic lithography apparatus 10 according to the embodiment. In addition, Fig. 7 is a front view showing a modification (designed as double-sided lithography apparatus 10') of the double-sided lithography apparatus 10 according to the embodiment, and is a view corresponding to the second drawing. The same components in Fig. 7 as those in Fig. 1 are denoted by the same reference numerals. Further, in Fig. 7, when the workpiece W is attached to the double lithography apparatus 10', the lower surface side of the workpiece W is defined as the first surface Wa, and the upper side of the workpiece W is shown. It is designated as the second side Wb.

雙面光刻裝置10’基本上與實施方式涉及的雙面光刻裝置10為幾乎同樣的構成,不過如第7圖所示,第一遮罩M1與第二遮罩M2的位置是與實施方式涉及的雙面光刻裝置10相反的構成。如上述般,由於在第7圖中,將該工件W的圖示下麵側定為第一面Wa,將該工件W的圖示上面側定為第二面Wb,因此第一遮罩M1與第二遮罩M2的位置是與實施方式涉及的雙面光刻裝置10相反的構成,但是第一遮罩M1仍然位於工件W的第一面Wa側,第二遮罩M2仍然位於工件W的第二面Wb側。The double-sided lithography apparatus 10' basically has substantially the same configuration as the double-sided lithography apparatus 10 according to the embodiment, but as shown in FIG. 7, the positions of the first mask M1 and the second mask M2 are implemented. The double lithography apparatus 10 according to the aspect has the reverse configuration. As described above, in Fig. 7, the lower surface side of the workpiece W is defined as the first surface Wa, and the upper surface side of the workpiece W is defined as the second surface Wb, so the first mask M1 and The position of the second mask M2 is opposite to that of the double lithography apparatus 10 according to the embodiment, but the first mask M1 is still located on the first surface Wa side of the workpiece W, and the second mask M2 is still located on the workpiece W. The second side is on the Wb side.

由於設為了這樣的構成,因此在雙面光刻裝置10’中所得到的第二遮罩台200的空間部201就相較於實施方式涉及的雙面光刻裝置10中的第二遮罩台200的空間部201變得足夠的大,並且在第一遮罩台100的規定位置上垂直設置支柱111使其貫穿該空間部201,在該支柱111的前端部固定第一遮罩安裝板120。再有,第一遮罩安裝板120被設置為位於工件W的第一面Wa側,並且在該第一遮罩安裝板120上安裝有第一遮罩M1。With such a configuration, the space portion 201 of the second mask stage 200 obtained in the double-sided lithography apparatus 10' is compared to the second mask in the double-sided lithography apparatus 10 according to the embodiment. The space portion 201 of the stage 200 is sufficiently large, and the pillar 111 is vertically disposed at a predetermined position of the first mask table 100 so as to penetrate the space portion 201, and the first mask mounting plate is fixed to the front end portion of the pillar 111. 120. Further, the first mask mounting plate 120 is disposed on the first face Wa side of the workpiece W, and the first mask M1 is mounted on the first mask mounting plate 120.

另一方面,在第二遮罩台200的角落部垂直設置有支柱211,該支柱211的前端部固定有第二遮罩安裝板220。再有,第二遮罩安裝板220被設置為位於工件W的第二面Wb側,並且在該第二遮罩安裝板220上安裝有第二遮罩M2。On the other hand, a pillar 211 is vertically disposed at a corner portion of the second mask stage 200, and a second mask mounting plate 220 is fixed to a front end portion of the pillar 211. Further, the second mask mounting plate 220 is disposed on the second face Wb side of the workpiece W, and the second mask M2 is mounted on the second mask mounting plate 220.

雙面光刻裝置10’如第7圖所示,構成為:第一遮罩M1位於工件W的第一面Wa側;第二遮罩M2位於工件W的第二面Wb側。像這樣,在雙面光刻裝置10’中,雖然第一遮罩M1與第二遮罩M2的位置與與實施方式涉及的雙面光刻裝置10相反,但是在用於第一遮罩M1與第二遮罩M2的對準以及第一遮罩M1以及第二遮罩M2與工件W的對準的運作上說,能夠實施與實施方式涉及的雙面光刻裝置10同樣的方式,藉由這樣,就能夠獲得與實施方式涉及的雙面光刻裝置10同樣的效果。As shown in Fig. 7, the double-sided lithography apparatus 10' is configured such that the first mask M1 is located on the first surface Wa side of the workpiece W, and the second mask M2 is located on the second surface Wb side of the workpiece W. As such, in the double-sided lithography apparatus 10', although the positions of the first mask M1 and the second mask M2 are opposite to those of the double-sided lithography apparatus 10 according to the embodiment, they are used for the first mask M1. The alignment with the second mask M2 and the alignment of the first mask M1 and the second mask M2 with the workpiece W can be performed in the same manner as the double-sided lithography apparatus 10 according to the embodiment. Thus, the same effects as those of the double-sided lithography apparatus 10 according to the embodiment can be obtained.

(7)在上述實施方式中,作為在進行遮罩與工件的對準時的順序,如第6圖所示,是先進行第一遮罩M1與第二遮罩M2對準的遮罩對準步驟(步驟S2),然後,再進行第一遮罩M1與工件W對準的遮罩與工件對準步驟(步驟S3),但是並不限於此順序,也可以將各步驟的順序進行替換。即,也可以是在先進行第一遮罩M1與工件W對準的步驟(遮罩與工件對準步驟)後,再進行第一遮罩M1與第二遮罩M2對準的步驟(遮罩對準步驟)。(7) In the above embodiment, as the order in which the mask and the workpiece are aligned, as shown in Fig. 6, the mask alignment in which the first mask M1 and the second mask M2 are aligned is performed first. Step (step S2), and then the mask and workpiece alignment step of the first mask M1 and the workpiece W are performed (step S3), but the order is not limited thereto, and the order of the steps may be replaced. That is, the step of aligning the first mask M1 with the workpiece W (the mask and the workpiece alignment step) may be performed before the first mask M1 and the second mask M2 are aligned. Cover alignment step).

第8圖是遮罩與工件進行對準時將各步驟順序替換後的流程說明圖。如第8圖所示,將第一遮罩M1安裝至第一遮罩安裝板120上的同時將第二遮罩M2安裝至第二遮罩安裝板220上的步驟作為步驟S11進行後,將第一遮罩M1與工件W對準的遮罩與工件對準步驟作為步驟S12進行,然後,將第一遮罩M1與第二遮罩M2對準的遮罩對準步驟作為步驟S13進行。即便是這樣的順序也能夠獲得與第6圖同樣的效果。再有,關於如第8圖所示的遮罩與工件對準步驟(步驟S12)以及遮罩對準步驟(步驟S13)中的各個對準控制,基本上能夠與上述實施方式中所說明的對準控制同樣來實施。Fig. 8 is a flow explanatory diagram in which the steps are sequentially replaced when the mask is aligned with the workpiece. As shown in FIG. 8, the step of mounting the second mask M2 onto the second mask mounting plate 220 while the first mask M1 is mounted on the first mask mounting plate 120 is performed as step S11, The mask-to-workpiece alignment step in which the first mask M1 is aligned with the workpiece W is performed as step S12, and then the mask alignment step of aligning the first mask M1 with the second mask M2 is performed as step S13. Even in such a sequence, the same effect as in the sixth drawing can be obtained. Further, the respective alignment control in the mask-to-workpiece alignment step (step S12) and the mask alignment step (step S13) as shown in Fig. 8 can basically be described as described in the above embodiment. Alignment control is also implemented.

即使是以第8圖所示的順序進行對準時,在使長條片狀的工件W以卷對卷方式在一個方向上行進的過程中來進行雙面光刻的情況下,每個光刻物件區域依次會位於與第一遮罩M1以及第二遮罩M2相對的位置上,此情況下在第8圖所示的流程圖中,當步驟S13結束後,會如第8圖中虛線R1所示般返回步驟S12進行處理。藉由這樣,就能夠在每個光刻物件區域上,進行第一遮罩M1與工件W的對準,和第一遮罩M1與第二遮罩M2的對準。Even when alignment is performed in the order shown in Fig. 8, in the case where double-sided lithography is performed in a process of moving the long sheet-like workpiece W in one direction in a roll-to-roll manner, each lithography The object area will be located at a position opposite to the first mask M1 and the second mask M2 in this case. In this case, in the flowchart shown in FIG. 8, when the step S13 is finished, the line R1 will be as shown in FIG. Returning to step S12 as shown, processing is performed. By doing so, alignment of the first mask M1 with the workpiece W and alignment of the first mask M1 with the second mask M2 can be performed on each of the lithographic article regions.

另外,只要將藉由第一遮罩M1與工件W的對準(步驟S12)獲得的第一遮罩M1與工件W位置關係進行固定,就能夠在不需要每次都對第一遮罩M1與工件W進行對準的情況下,在第8圖所示的流程中,如第8圖中虛線R2所示般對每個光刻物件區域重複進行步驟S13。藉由這樣,就能夠在每個光刻物件區域上,在第一遮罩M1與工件W位置關係保持不變的情況下,進行第一遮罩M1與第二遮罩M2的對準。In addition, as long as the positional relationship between the first mask M1 and the workpiece W obtained by the alignment of the first mask M1 and the workpiece W (step S12) is fixed, it is possible to eliminate the need for the first mask M1 every time. In the case of alignment with the workpiece W, in the flow shown in Fig. 8, step S13 is repeated for each of the lithographic article regions as indicated by a broken line R2 in Fig. 8. By doing so, alignment of the first mask M1 and the second mask M2 can be performed on each of the lithographic article regions while the positional relationship between the first mask M1 and the workpiece W remains unchanged.

(8)在上述實施方式中,遮罩對準標記以及工件對準標記的形狀分別以定為圓點形狀為示例,但是其並且不限於圓點形狀,可以實施三角形或四角形等的多角形、星形等的各種變形。(8) In the above embodiment, the shapes of the mask alignment mark and the workpiece alignment mark are respectively exemplified as the dot shape, but the shape of the dot is not limited to the dot shape, and a polygon such as a triangle or a quadrangle may be implemented. Various deformations such as stars.

(9)在上述實施方式中,是以在設置用於第一遮罩M1與第二遮罩M2對準的遮罩對準標記的同時,設置用於第一遮罩M1以及第二遮罩M2與工件W對準的工件對準標記,從而進行第一遮罩M1與第二遮罩M2的對準的同時,進行第一遮罩M1以及第二遮罩M2與工件W的對準為示例,但是在進行遮罩之間的對準時和進行遮罩與工件的對準時,也能夠共用各對準標記中的一部分對準標記。(9) In the above embodiment, the first mask M1 and the second mask are provided while the mask alignment marks for the alignment of the first mask M1 and the second mask M2 are provided. M2 is aligned with the workpiece W by the workpiece alignment mark, so that the alignment of the first mask M1 and the second mask M2 is performed, and the alignment of the first mask M1 and the second mask M2 with the workpiece W is performed. For example, a part of the alignment marks of each alignment mark can also be shared when the alignment between the masks is performed and when the mask is aligned with the workpiece.

第9圖是遮罩之間進行對準時與遮罩與工件進行對準時共用各對準標記中的一部分對準標記時的說明圖。其中,第9圖(a)為例如將第一遮罩M1、第二遮罩M2以及工件W如第4圖所示般進行配置時,將第一遮罩M1、第二遮罩M2以及工件W的各自一部分沿x軸進行切割後的截面圖,第9圖(b)則是從第一遮罩M1側觀看第9圖(a)時的平面圖。Fig. 9 is an explanatory view showing a case where a part of the alignment marks of the respective alignment marks are shared when the masks are aligned with each other when the masks are aligned with the workpiece. Here, in the ninth diagram (a), for example, when the first mask M1, the second mask M2, and the workpiece W are arranged as shown in FIG. 4, the first mask M1, the second mask M2, and the workpiece are placed. A cross-sectional view of each of W is cut along the x-axis, and FIG. 9(b) is a plan view when the ninth figure (a) is viewed from the first mask M1 side.

再有,在第9圖中,第一遮罩M1、第二遮罩M2、工件W以及對準標記等是被誇張後標示的。另外,在上述實施方式中,雖然將用於第一遮罩M1與第二遮罩M2進行對準的標記定為「遮罩對準對準標記」;將用於第一遮罩M1以及第二遮罩M2與工件W進行對準的標記定為「工件對準對準標記」,但是在第9圖中,則將這些總稱為「對準標記」來進行說明。Further, in Fig. 9, the first mask M1, the second mask M2, the workpiece W, the alignment marks, and the like are marked and exaggerated. Further, in the above embodiment, the mark for aligning the first mask M1 and the second mask M2 is defined as "mask alignment alignment mark"; it will be used for the first mask M1 and the The mark in which the two masks M2 are aligned with the workpiece W is defined as "workpiece alignment alignment mark", but in Fig. 9, these are collectively referred to as "alignment marks".

如第9圖所示,設置在第一遮罩M1上的對準標記P11例如定為點狀標記,設置在第二遮罩M2上的對準標記P21定為能夠包含設置在第一遮罩M1上的對準標記P11的框形(在第9圖中定為圓形)標記,設置在工件W上的對準標記P31的內側為中空(孔)。像這樣的對準標記P11、P21、P31在第一遮罩M1、第二遮罩M2以及工件W上的規定位置上被分別設置有多處(例如兩處)。As shown in FIG. 9, the alignment mark P11 disposed on the first mask M1 is defined as a dot mark, for example, and the alignment mark P21 disposed on the second mask M2 is set to be included in the first mask. The frame shape of the alignment mark P11 on M1 (circular in FIG. 9) is marked, and the inner side of the alignment mark P31 provided on the workpiece W is hollow (hole). The alignment marks P11, P21, and P31 as described above are respectively provided at a plurality of positions (for example, two places) at predetermined positions on the first mask M1, the second mask M2, and the workpiece W.

此處,例如在第一遮罩M1與第二遮罩M2進行對準時,進行對準控制使設置在第一遮罩M1上的對準標記P11與設置在第二遮罩M2上的對準標記P21一致(對準標記P11位於對準標記P21的中心)。然後,在第一遮罩M1與第二遮罩M2完成對準的狀態下,在進行第一遮罩M1與工件W的對準時,進行對準控制使設置在第一遮罩M1上的對準標記P11與設置在工件W上的對準標記P31一致(對準標記P11位於對準標記P31的中心)。第9圖(b)展示的就是第一遮罩M1與第二遮罩M2完成對準,並且,第一遮罩M1與工件W完成對準的狀態。Here, for example, when the first mask M1 and the second mask M2 are aligned, the alignment control is performed such that the alignment mark P11 disposed on the first mask M1 and the alignment disposed on the second mask M2 are aligned. The mark P21 is identical (the alignment mark P11 is located at the center of the alignment mark P21). Then, in a state in which the first mask M1 and the second mask M2 are aligned, when the alignment of the first mask M1 and the workpiece W is performed, alignment control is performed to make the pair disposed on the first mask M1. The alignment mark P11 coincides with the alignment mark P31 provided on the workpiece W (the alignment mark P11 is located at the center of the alignment mark P31). Fig. 9(b) shows a state in which the first mask M1 and the second mask M2 are aligned, and the first mask M1 is aligned with the workpiece W.

再有,採用第9圖中所示發熱對準標記時的對準控制,能夠藉由第5圖所示的對準控制裝置500來進行。即,根據對分別設置有兩處的對準標記P11、P21、P31利用分別對應的攝像機C1、C2進行攝像後獲得的攝像資料,控制第二遮罩台200從而使分別設置在第一遮罩M1和第二遮罩M2上的對準標記P11、P21一致的同時,控制第一遮罩台100從而使分別設置在第一遮罩M1和工件W上的對準標記P11、P31一致。Further, the alignment control when the heat-provisioning mark shown in Fig. 9 is used can be performed by the alignment control device 500 shown in Fig. 5. That is, the second mask table 200 is controlled so as to be respectively disposed in the first mask, based on the image data obtained by imaging the respective cameras C1 and C2 with the alignment marks P11, P21, and P31 provided at two places respectively. While the alignment marks P11 and P21 on the second mask M2 coincide with each other, the first mask stage 100 is controlled so that the alignment marks P11 and P31 respectively disposed on the first mask M1 and the workpiece W coincide.

即使是在採用第9圖所示的對準標記的情況下,也能夠在不移動和不轉動工件的情況下,能夠將第一遮罩與第二遮罩、第一遮罩以及第二遮罩與工件進行對準。Even in the case where the alignment mark shown in FIG. 9 is employed, the first mask and the second mask, the first mask, and the second mask can be moved without moving or rotating the workpiece. The cover is aligned with the workpiece.

像這樣,藉由採用第9圖所示的對準標記P11、P21、P31,就能夠在遮罩之間進行對準時和遮罩與工件進行對準時共用各對準標記中的一部分對準標記。例如,在上述實施方式中第一遮罩M1的遮罩對準標記P1則相當於第9圖中的對準標記P11,同樣的,第二遮罩M2的遮罩對準標記P3則相當於第9圖中的對準標記P21。還有,在上述實施方式中第一遮罩M1的工件對準標記P5則相當於第9圖中的對準標記P11,同樣的,工件W的工件對準標記P7則相當於第9圖中的對準標記P31。像這樣,第9圖所示的對準標記P11就在遮罩之間進行對準時和遮罩與工件進行對準時作為共用的對準標記發揮了功能。By using the alignment marks P11, P21, and P31 shown in Fig. 9, it is possible to share a part of the alignment marks in the alignment marks when the alignment is performed between the masks and when the masks are aligned with the workpieces. . For example, in the above embodiment, the mask alignment mark P1 of the first mask M1 corresponds to the alignment mark P11 in FIG. 9, and similarly, the mask alignment mark P3 of the second mask M2 is equivalent to The alignment mark P21 in Fig. 9. Further, in the above embodiment, the workpiece alignment mark P5 of the first mask M1 corresponds to the alignment mark P11 in FIG. 9, and similarly, the workpiece alignment mark P7 of the workpiece W corresponds to FIG. Alignment mark P31. As described above, the alignment mark P11 shown in Fig. 9 functions as a common alignment mark when the masks are aligned between the masks and when the masks are aligned with the workpieces.

該情況下,對準標記P11、P21、P31被設置在第一遮罩M1、第二遮罩M2、以及工件W上,藉由這些對準標記P11、P21、P31能夠對第一遮罩M1與第二遮罩M2、第二遮罩M2以及第二遮罩M2與工件W進行對準的位置上。In this case, the alignment marks P11, P21, and P31 are disposed on the first mask M1, the second mask M2, and the workpiece W, and the alignment masks P11, P21, and P31 can be used to the first mask M1. The position is aligned with the second mask M2, the second mask M2, and the second mask M2 and the workpiece W.

即使是在採用第9圖所示的對準標記的情況下,也具有可控制攝像裝置C(攝像機C1、C2)移動的攝像裝置移動控制裝置600(參照第5圖),該攝像裝置移動控制裝置600至少在光刻時控制攝像裝置C(攝像機C1、C2)移動從而使攝像裝置C(攝像機C1、C2)位於離開工件W上的光刻物件區域B的位置上。另外,即使是在採用第9圖所示的對準標記的情況下,進行第一遮罩M1與第二遮罩M2對準的遮罩對準步驟以及進行第一遮罩M1與工件W對準的工件對準步驟,可以是按第6圖所示的順序進行,也可以是按第8圖所示的順序進行。Even when the alignment mark shown in FIG. 9 is employed, there is an imaging device movement control device 600 (refer to FIG. 5) that can control the movement of the imaging device C (cameras C1, C2), and the imaging device movement control The apparatus 600 controls the movement of the imaging apparatus C (cameras C1, C2) at least during photolithography so that the imaging apparatus C (cameras C1, C2) is located away from the lithographic object area B on the workpiece W. In addition, even in the case where the alignment mark shown in FIG. 9 is employed, the mask alignment step of aligning the first mask M1 with the second mask M2 and the first mask M1 and the workpiece W are performed. The order of the workpiece alignment may be performed in the order shown in Fig. 6, or in the order shown in Fig. 8.

(10)在上述實施方式中,雖然是以一邊使長條片狀的工件W在一個方向上行進,一邊依次進行雙面光刻,也就是以卷對卷方式的雙面光刻裝置來作為示例的,但是並不限於這樣的雙面光刻裝置,也可以是對短條片狀的工件W一片一片來進行光刻的雙面光刻裝置。(10) In the above embodiment, the double-sided lithography is sequentially performed while the long sheet-like workpiece W is traveling in one direction, that is, the double-sided lithography apparatus of the roll-to-roll type is used. For example, the present invention is not limited to such a double-sided lithography apparatus, and may be a double-sided lithography apparatus that performs lithography on a sheet-like workpiece W one by one.

(11)在上述實施方式中,雖然在將攝像裝置(攝像機C1、C2)設為位於離開光刻區域的位置上時,是以使攝像裝置(攝像機C1、C2)移動至位於可對遮罩對準標記P1、P2進行攝像的位置上來作為示例的,但是只要是位於離開光刻物件B1的位置上,就不必一定是要位於可對遮罩對準標記P1、P2進行攝像的位置上。例如,只要是將攝像裝置安裝在機械臂等上並可自在地移動,就能夠將攝像裝置移動至光刻物件區域B1外的任意位置上。(11) In the above embodiment, when the imaging device (cameras C1, C2) is placed at a position away from the lithographic area, the imaging device (cameras C1, C2) is moved to be located in the mask. The position at which the alignment marks P1, P2 are imaged is exemplified, but as long as it is located away from the lithographic article B1, it is not necessarily required to be located at a position where the mask alignment marks P1, P2 can be imaged. For example, the imaging device can be moved to an arbitrary position outside the lithographic article area B1 as long as the imaging device is mounted on a robot arm or the like and can be freely moved.

(12)在上述實施方式中,雖然是以第一遮罩M1如第1圖以及第2圖所示安裝在第一遮罩安裝板120的上方面側,同時,第二遮罩M2如第1圖以及第2圖所示安裝在第二遮罩安裝板220的下方面側的構成來進行示例的,但並不限於此,也可以是將第一遮罩M1安裝在第一遮罩安裝板120的下方面側,同時,第二遮罩M2安裝在第二遮罩安裝板220的上方面側的構成。這種情況在第7圖所示的雙面光刻裝置的變形例(雙面光刻裝置10’)中也一樣。即,在雙面光刻裝置10’中,也可以是第一遮罩M1安裝在第一遮罩安裝板120的上方面側,同時,第二遮罩M2安裝在第二遮罩安裝板220的下方面側的構成。(12) In the above embodiment, the first mask M1 is attached to the upper side of the first mask mounting plate 120 as shown in Figs. 1 and 2, and the second mask M2 is 1 and FIG. 2 are exemplified by the configuration of the lower side of the second mask mounting plate 220. However, the present invention is not limited thereto, and the first mask M1 may be mounted on the first mask. At the lower side of the plate 120, at the same time, the second mask M2 is mounted on the upper side of the second mask mounting plate 220. This case is also the same in the modification (double-sided lithography apparatus 10') of the double-sided lithography apparatus shown in Fig. 7. That is, in the double-sided lithography apparatus 10', the first mask M1 may be mounted on the upper side of the first mask mounting plate 120, and the second mask M2 may be mounted on the second mask mounting plate 220. The composition of the lower side.

10、10’‧‧‧雙面光刻裝置
100‧‧‧第一遮罩台
101、121、201、221‧‧‧空間部
111、211‧‧‧支柱
120‧‧‧第一遮罩安裝板
200‧‧‧第二遮罩台
220‧‧‧第二遮罩安裝板
310‧‧‧第一光源
320‧‧‧第二光源
330、340‧‧‧反射鏡
500‧‧‧對準控制裝置
510‧‧‧第一遮罩台驅動控制部
520‧‧‧第二遮罩台驅動控制部
530‧‧‧控制部
C、C1、C2、C3、C4‧‧‧攝像裝置(攝像機)
L1、L2‧‧‧光軸
M1‧‧‧第一遮罩
M2‧‧‧第二遮罩
P1、P2、P3、P4‧‧‧遮罩對準標記
P11、P21、P31‧‧‧對準標記
P5、P6、P7、P8‧‧‧工件對準標記
S1至S3、S11至S13‧‧‧步驟
Sx11、Sx12、Sy13、Sx21、Sx22、Sy23‧‧‧電機(伺服電機)
W‧‧‧工件
Wa‧‧‧工件的第一面
Wb‧‧‧工件的第二面
10, 10'‧‧‧Double-sided lithography apparatus
100‧‧‧First masking station
101, 121, 201, 221‧‧‧ Space Department
111, 211‧‧ ‧ pillar
120‧‧‧First mask mounting plate
200‧‧‧Second masking station
220‧‧‧Second mask mounting plate
310‧‧‧First light source
320‧‧‧Second light source
330, 340‧‧‧ mirror
500‧‧‧Alignment control device
510‧‧‧First Masking Drive Control Department
520‧‧‧Second mask station drive control unit
530‧‧‧Control Department
C, C1, C2, C3, C4‧‧‧ camera (camera)
L1, L2‧‧‧ optical axis
M1‧‧‧ first mask
M2‧‧‧ second mask
P1, P2, P3, P4‧‧‧ mask alignment marks
P11, P21, P31‧‧ Alignment marks
P5, P6, P7, P8‧‧‧ workpiece alignment marks
Steps S1 to S3, S11 to S13‧‧
Sx11, Sx12, Sy13, Sx21, Sx22, Sy23‧‧‧ motor (servo motor)
W‧‧‧Workpiece
The first side of the Wa‧‧‧ workpiece
Wb‧‧‧ second side of the workpiece

第1圖是實施方式所涉及的雙面光刻裝置10的說明用斜視圖。 第2圖是實施方式所涉及的雙面光刻裝置10的說明用正面圖。 第3圖是第一遮罩台100沿xy平面移動以及沿xy平面轉動的說明圖。 第4圖是第一遮罩M1與第二遮罩M2的對準以及第一遮罩M1與工件W的對準的說明圖。 第5圖是實施方式所涉及的雙面光刻裝置10中的對準控制裝置500以及攝像裝置移動控制裝置600的說明圖。 第6圖是遮罩與工件進行對準時的各步驟的流程說明圖。 第7圖是實施方式所涉及的雙面光刻裝置10的變形例的說明圖。 第8圖是遮罩與工件進行對準時將各步驟順序替換後的流程說明圖。 第9圖是遮罩之間進行對準時與遮罩與工件進行對準時共用各對準標記中的一部分對準標記時的說明圖。Fig. 1 is a perspective view for explaining the double-sided lithography apparatus 10 according to the embodiment. Fig. 2 is a front view for explaining the double-sided lithography apparatus 10 according to the embodiment. Figure 3 is an explanatory view of the first mask stage 100 moving along the xy plane and rotating along the xy plane. 4 is an explanatory view of the alignment of the first mask M1 and the second mask M2 and the alignment of the first mask M1 and the workpiece W. FIG. 5 is an explanatory diagram of the alignment control device 500 and the imaging device movement control device 600 in the double-sided lithography apparatus 10 according to the embodiment. Fig. 6 is a flow explanatory diagram of each step when the mask is aligned with the workpiece. Fig. 7 is an explanatory diagram of a modification of the double photographic lithography apparatus 10 according to the embodiment. Fig. 8 is a flow explanatory diagram in which the steps are sequentially replaced when the mask is aligned with the workpiece. Fig. 9 is an explanatory view showing a case where a part of the alignment marks of the respective alignment marks are shared when the masks are aligned with each other when the masks are aligned with the workpiece.

10‧‧‧雙面光刻裝置 10‧‧‧Double-sided lithography apparatus

100‧‧‧第一遮罩台 100‧‧‧First masking station

101、121、201、221‧‧‧空間部 101, 121, 201, 221‧‧‧ Space Department

111、211‧‧‧支柱 111, 211‧‧ ‧ pillar

120‧‧‧第一遮罩安裝板 120‧‧‧First mask mounting plate

200‧‧‧第二遮罩台 200‧‧‧Second masking station

220‧‧‧第二遮罩安裝板 220‧‧‧Second mask mounting plate

310‧‧‧第一光源 310‧‧‧First light source

320‧‧‧第二光源 320‧‧‧Second light source

330、340‧‧‧反射鏡 330, 340‧‧‧ mirror

L1、L2‧‧‧光軸 L1, L2‧‧‧ optical axis

M1‧‧‧第一遮罩 M1‧‧‧ first mask

M2‧‧‧第二遮罩 M2‧‧‧ second mask

W‧‧‧工件 W‧‧‧Workpiece

Wa‧‧‧工件的第一面 The first side of the Wa‧‧‧ workpiece

Claims (10)

一種雙面光刻裝置,將作為光刻對象的工件的第一面藉由第一遮罩進行光刻,將與該第一面相反側的第二面藉由第二遮罩進行光刻,其中在將與該第一面以及該第二面相平行的面定為包含有垂直相交的x軸以及y軸的xy平面時,該雙面光刻裝置包括: 第一遮罩台,使該第一遮罩可沿該xy平面移動的同時可沿該xy平面轉動;以及 第二遮罩台,使該第二遮罩可沿該xy平面移動的同時可沿該xy平面轉動; 其中,該第二遮罩台安裝在該第一遮罩臺上,並且能夠在該第一遮罩臺上除該第一遮罩台之外沿該xy平面移動的同時沿該xy平面轉動,當該第一遮罩台沿該xy平面移動時,隨該第一遮罩台一同在該xy平面上以相同方向移動相同的量,當該第一遮罩台沿該xy平面轉動時,隨該第一遮罩台一同在該xy平面上以相同方向轉動相同的量。A double-sided lithography apparatus, wherein a first surface of a workpiece as a lithography object is photolithographically patterned by a first mask, and a second surface opposite to the first surface is photolithographically patterned by a second mask Wherein when the surface parallel to the first surface and the second surface is defined as an xy plane including a vertically intersecting x-axis and a y-axis, the double-sided lithography apparatus comprises: a first mask stage, such that the surface a mask is rotatable along the xy plane while moving along the xy plane; and a second masking station is rotatable along the xy plane while the second mask is movable along the xy plane; wherein the a second mask stage mounted on the first mask stage and capable of rotating along the xy plane while moving along the xy plane except the first mask stage on the first mask stage, when the first When the mask table moves along the xy plane, the first mask table moves in the same direction on the xy plane by the same amount, and when the first mask table rotates along the xy plane, the first mask The hood is rotated by the same amount in the same direction on the xy plane. 如申請專利範圍第1項所述之雙面光刻裝置,其更包含: 第一遮罩安裝板,被設置在該工件的該第一面側,並且能夠將該第一遮罩自如地安裝和卸下;以及 第二遮罩安裝板,被設置在該工件的該第二面側,並且能夠將該第二遮罩自如地安裝和卸下; 其中,該第一遮罩安裝板藉由垂直設置於該第一遮罩臺上的支撐部件從而被固定在該第一遮罩臺上,該第二遮罩安裝板藉由垂直設置於該第二遮罩臺上的支撐部件從而被固定在該第二遮罩臺上。The double-sided lithography apparatus according to claim 1, further comprising: a first mask mounting plate disposed on the first surface side of the workpiece, and capable of freely mounting the first mask And removing; and a second mask mounting plate disposed on the second side of the workpiece and capable of freely mounting and detaching the second mask; wherein the first mask mounting plate is a support member vertically disposed on the first mask table is thereby fixed on the first mask table, and the second mask mounting plate is fixed by a support member vertically disposed on the second mask table On the second mask stand. 如申請專利範圍第1或2項所述之雙面光刻裝置,其中可沿該xy平面移動是指可沿該x軸移動的同時可沿該y軸移動,可沿該xy平面轉動是指可在與該xy平面相垂直的z軸周圍轉動。The double-sided lithography apparatus according to claim 1 or 2, wherein the movable along the xy plane means that the y-axis can be moved along the y-axis while the movement along the xy-plane is movable along the xy-plane. It is rotatable about the z-axis perpendicular to the xy plane. 如申請專利範圍第1至3項中之任意一項所述之雙面光刻裝置,其中用於該第一遮罩與該第二遮罩對準的遮罩對準標記,被分別設置於該第一遮罩和該第二遮罩上,同時,用於該第一遮罩以及該第二遮罩與該工件對準的工件對準標記被分別設置於該第一遮罩以及該第二遮罩中至少一方的遮罩上和該工件上。The double-sided lithographic apparatus according to any one of claims 1 to 3, wherein the mask alignment marks for aligning the first mask and the second mask are respectively disposed on And the first mask and the second mask, and the workpiece alignment marks for the first mask and the second mask aligned with the workpiece are respectively disposed on the first mask and the first mask At least one of the two masks is on the mask and on the workpiece. 如申請專利範圍第4項所述之雙面光刻裝置,其更包括: 攝像裝置,能夠對該遮罩對準標記以及該工件對準標記進行攝像;以及 對準控制裝置,具備根據藉由該攝像裝置獲得的攝像資料,控制該第二遮罩台使分別被設置於該第一遮罩與該第二遮罩處的該遮罩對準標記一致,同時,控制該第一遮罩台使分別被設置於該第一遮罩以及該第二遮罩中至少一方的遮罩處與該工件處的該工件對準標記一致的功能。The double-sided lithography apparatus according to claim 4, further comprising: an image pickup device capable of capturing the mask alignment mark and the workpiece alignment mark; and an alignment control device having The image data obtained by the camera device controls the second mask table to match the mask alignment marks respectively disposed at the first mask and the second mask, and simultaneously controls the first mask table And a function of aligning the workpiece alignment marks at the workpiece with the masks respectively disposed at at least one of the first mask and the second mask. 如申請專利範圍第5項所述之雙面光刻裝置,其更包括能夠控制用於移動該攝像裝置的攝像裝置移動控制裝置,該攝像裝置移動控制裝置具備至少在光刻時控制該攝像裝置移動從而使該攝像裝置位於離開該工件上的光刻物件區域的位置上的功能。The double-sided lithography apparatus according to claim 5, further comprising an image pickup device movement control device capable of controlling the image pickup device, wherein the image pickup device movement control device is provided to control the image pickup device at least during photolithography Moving to thereby position the camera device at a position away from the area of the lithographic article on the workpiece. 如申請專利範圍第4至6項中之任意一項所述之雙面光刻裝置,其中該遮罩對準標記在該第一遮罩上的相互隔開的規定位置上設置有m處,m為大於等於2的整數,並且在該第二遮罩上的相互隔開的規定位置上與該第一遮罩上設置的m處遮罩對準標記相對應地設置有m處,該工件對準標記在該第一遮罩以及該第二遮罩中至少一方的遮罩上的相互隔開的規定位置上設置有n處,n為大於等於2的整數,並且在該工件上的相互隔開的規定位置上與該遮罩上設置的n處工件對準標記相對應地設置有n處。The double-sided lithographic apparatus according to any one of claims 4 to 6, wherein the mask alignment mark is provided at m at a predetermined position spaced apart from each other on the first mask, m is an integer greater than or equal to 2, and is disposed at a position corresponding to the mask alignment mark at the m provided on the first mask at a predetermined position on the second mask at a distance from each other, the workpiece The alignment mark is provided at n at a predetermined position on the mask of at least one of the first mask and the second mask, n is an integer greater than or equal to 2, and mutual on the workpiece The spaced apart predetermined positions are provided with n corresponding to the workpiece alignment marks of n disposed on the mask. 一種雙面光刻裝置中遮罩與工件的對準方法,在將作為光刻物件的工件的第一面藉由第一遮罩進行光刻,將與該第一面相反側的第二面藉由第二遮罩進行光刻的雙面光刻裝置中,在進行該第一遮罩與該第二遮罩對準的同時,進行該第一遮罩以及該第二遮罩與該工件對準,該雙面光刻裝置中遮罩與工件的對準方法使用如申請專利範圍第1至7項中之任意一項所述之雙面光刻裝置來作為該雙面光刻裝置,作為在進行該第一遮罩與該第二遮罩對準的同時,進行該第一遮罩以及該第二遮罩與該工件對準的步驟,包括: 遮罩對準步驟,藉由對該第二遮罩台進行沿該xy平面的移動以及沿該xy平面的轉動中的至少一方來進行該第一遮罩與該第二遮罩的對準;以及 遮罩與工件對準步驟,藉由對該第一遮罩台進行沿該xy平面的移動以及轉動中的至少一方來進行該第一遮罩與該工件的對準。A method for aligning a mask and a workpiece in a double-sided lithography apparatus, wherein a first surface of a workpiece as a lithographic article is photolithographically patterned by a first mask, and a second surface opposite to the first surface is formed In the double-sided lithography apparatus for performing photolithography by the second mask, the first mask and the second mask and the workpiece are performed while the first mask and the second mask are aligned Alignment, the method of aligning the mask with the workpiece in the double-sided lithography apparatus, using the double-sided lithography apparatus according to any one of claims 1 to 7 as the double-sided lithography apparatus, And performing the step of aligning the first mask and the second mask with the workpiece while performing the alignment of the first mask and the second mask, comprising: a mask alignment step, by The second masking station performs at least one of movement along the xy plane and rotation along the xy plane to perform alignment of the first mask and the second mask; and a step of aligning the mask with the workpiece, Performing the first mask by performing at least one of movement and rotation of the first mask table along the xy plane Alignment with the workpiece. 如申請專利範圍第8項所述之雙面光刻裝置中遮罩與工件的對準方法,其中在進行該遮罩對準步驟後進行該遮罩與工件對準步驟。The method of aligning a mask with a workpiece in the double lithography apparatus of claim 8, wherein the masking and workpiece alignment step is performed after the mask alignment step. 如申請專利範圍第8項所述之雙面光刻裝置中遮罩與工件的對準方法,其中在進行該遮罩工件對準步驟後,進行該遮罩對準步驟。The method of aligning a mask with a workpiece in the double lithography apparatus of claim 8, wherein the mask alignment step is performed after the mask workpiece alignment step is performed.
TW105139412A 2016-05-26 2016-11-30 Double-sided lithographic apparatus and method for aligning mask and workpiece in double-sided lithographic apparatus TWI616729B (en)

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