TW201737402A - 同軸遮罩對準裝置、光蝕刻設備及對準方法 - Google Patents

同軸遮罩對準裝置、光蝕刻設備及對準方法 Download PDF

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Publication number
TW201737402A
TW201737402A TW106111133A TW106111133A TW201737402A TW 201737402 A TW201737402 A TW 201737402A TW 106111133 A TW106111133 A TW 106111133A TW 106111133 A TW106111133 A TW 106111133A TW 201737402 A TW201737402 A TW 201737402A
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TW
Taiwan
Prior art keywords
mask
mark
alignment
mask alignment
reference mark
Prior art date
Application number
TW106111133A
Other languages
English (en)
Chinese (zh)
Inventor
張成爽
Original Assignee
上海微電子裝備（集團）股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 上海微電子裝備（集團）股份有限公司 filed Critical 上海微電子裝備（集團）股份有限公司
Publication of TW201737402A publication Critical patent/TW201737402A/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7015—Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Library & Information Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
TW106111133A 2016-03-31 2017-03-31 同軸遮罩對準裝置、光蝕刻設備及對準方法 TW201737402A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610200702.3A CN107290943B (zh) 2016-03-31 2016-03-31 同轴掩模对准装置、光刻设备及对准方法

Publications (1)

Publication Number Publication Date
TW201737402A true TW201737402A (zh) 2017-10-16

Family

ID=59962643

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106111133A TW201737402A (zh) 2016-03-31 2017-03-31 同軸遮罩對準裝置、光蝕刻設備及對準方法

Country Status (7)

Country Link
US (1) US10901331B2 (https=)
JP (1) JP6856263B2 (https=)
KR (1) KR102190328B1 (https=)
CN (1) CN107290943B (https=)
SG (1) SG11201808604XA (https=)
TW (1) TW201737402A (https=)
WO (1) WO2017167260A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11790511B2 (en) 2018-07-27 2023-10-17 Nec Corporation Information processing device, system, and method
CN109240047B (zh) * 2018-11-06 2023-11-21 苏州源卓光电科技有限公司 一种直写式曝光机及其标定方法
CN111380509B (zh) * 2018-12-28 2022-04-01 上海微电子装备（集团）股份有限公司 一种掩模版姿态监测方法、装置及掩模版颗粒度检测设备
CN113514477B (zh) * 2020-04-10 2024-06-11 深圳中科飞测科技股份有限公司 一种光学设备及其对准方法和检测方法
CN114323577B (zh) * 2021-12-10 2024-04-02 智慧星空(上海)工程技术有限公司 成像镜头性能检测系统
CN116466551A (zh) * 2023-04-17 2023-07-21 合肥芯碁微电子装备股份有限公司 背面对准装置及其方法和曝光设备

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2897330B2 (ja) * 1990-04-06 1999-05-31 キヤノン株式会社 マーク検出装置及び露光装置
JPH0950959A (ja) 1995-06-01 1997-02-18 Nikon Corp 投影露光装置
JPH09312251A (ja) * 1996-05-22 1997-12-02 Nikon Corp 投影露光装置
JPH1048845A (ja) * 1996-08-01 1998-02-20 Ushio Inc マスクとワークステージの位置合わせ方法および装置
JP3538073B2 (ja) * 1999-07-29 2004-06-14 Ｎｅｃ液晶テクノロジー株式会社 Ｔｆｔを搭載する基板側に色層を有するアクティブマトリクス型液晶表示装置及びその製造方法
US20050128449A1 (en) * 2003-12-12 2005-06-16 Nikon Corporation, A Japanese Corporation Utilities transfer system in a lithography system
JP2005175383A (ja) * 2003-12-15 2005-06-30 Canon Inc 露光装置、アライメント方法、及び、デバイスの製造方法
US8614830B2 (en) * 2004-09-27 2013-12-24 Hewlett-Packard Development Company, L.P. Pixel exposure as a function of subpixels
JP2006242722A (ja) * 2005-03-02 2006-09-14 Nikon Corp 位置計測方法、この位置計測方法を実施する位置計測装置、この位置計測方法を使用するデバイス製造方法、及びこの位置計測装置を装備する露光装置
CN1794095A (zh) * 2006-01-06 2006-06-28 上海微电子装备有限公司 投影曝光装置中的同轴位置对准系统和对准方法
JP2007250947A (ja) * 2006-03-17 2007-09-27 Canon Inc 露光装置および像面検出方法
CN100578369C (zh) * 2006-04-04 2010-01-06 上海微电子装备有限公司 用于投影曝光装置中的自动位置对准装置和位置对准方法
CN100526999C (zh) 2007-08-03 2009-08-12 上海微电子装备有限公司 光刻装置的对准方法及系统
JP2009200105A (ja) * 2008-02-19 2009-09-03 Canon Inc 露光装置
CN101382743B (zh) 2008-10-27 2011-12-21 上海微电子装备有限公司 同轴双面位置对准系统及位置对准方法
JP5445905B2 (ja) * 2009-03-18 2014-03-19 株式会社ニコン 位置合わせ方法及び装置、並びに露光方法及び装置
CN102081312B (zh) 2009-11-26 2012-08-29 上海微电子装备有限公司 双面对准装置及其对准方法
CN102540782A (zh) 2010-12-28 2012-07-04 上海微电子装备有限公司 用于光刻设备的对准装置及方法
CN102890422B (zh) 2011-07-20 2016-04-20 上海微电子装备有限公司 用于掩模对准的探测器系统及方法
CN103197518B (zh) 2012-01-05 2015-03-25 上海微电子装备有限公司 一种对准装置和方法
CN103365098B (zh) * 2012-03-27 2016-04-20 上海微电子装备有限公司 一种用于曝光装置的对准标记
CN103383531B (zh) * 2012-05-02 2016-07-06 上海微电子装备有限公司 掩模对准装置及使用该装置的光刻设备
CN104678720B (zh) 2013-12-03 2017-01-04 上海微电子装备有限公司 利用掩模对准系统进行工件台基准板旋转探测的方法
CN205608393U (zh) * 2016-03-31 2016-09-28 上海微电子装备有限公司 同轴掩模对准装置及光刻设备

Also Published As

Publication number Publication date
WO2017167260A1 (zh) 2017-10-05
JP2019511747A (ja) 2019-04-25
JP6856263B2 (ja) 2021-04-07
SG11201808604XA (en) 2018-10-30
CN107290943A (zh) 2017-10-24
US20190113856A1 (en) 2019-04-18
KR20180126544A (ko) 2018-11-27
KR102190328B1 (ko) 2020-12-11
US10901331B2 (en) 2021-01-26
CN107290943B (zh) 2019-01-29

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