TW201735405A - LED chip encapsulation member comprising phosphor, LED package including the LED chip encapsulation member, and manufacturing method for the same - Google Patents

Abstract

The present invention relates to an LED chip sealing member and an LED package comprising the same, the LED chip sealing member according to one embodiment of the present invention comprising: a first glass having a groove formed on one surface thereof; a second glass which is disposed in contact with one surface of the first glass so as to cover the groove; a sealing joint for bonding the first glass and the second glass; and a phosphor inserted into the groove of the first glass.

Description

LED chip seal containing phosphor, LED package including the same, and manufacturing method thereof

The present invention relates to an LED chip seal including a phosphor, an LED package including the same, and a method of manufacturing the same, and more particularly to a phosphor capable of sealing a phosphor such as a KSF phosphor, a CASN phosphor, or a quantum dot. LED wafer-formed LED wafer seal, LED package including the same, and method of manufacturing the same.

A light emitting diode (hereinafter referred to as "LED") is a semiconductor made of a material such as gallium (Ga), phosphorus (P), or arsenic (As), and has a property of emitting light when energized. LEDs are widely used in light sources of various display devices because they have a long life and a fast response speed, and can be miniaturized and emit bright colors. For example, a light-emitting element in a backlight unit (BLU) that emits light behind a liquid crystal display of a liquid crystal display (LCD) employs an LED package including an LED chip.

In general, an LED package for a backlight unit or the like is formed by sealing a LED wafer on a printed circuit board with a sealing material and then adhering the lens. Here, the sealing material is basically used to protect the LED from external impact or the like. The wafer transmits light from the LED chip to emit the light to the outside. The above sealing materials are usually made of an epoxy resin and an anthracene resin.

In addition, a phosphor can be used in order to convert the luminescent color from the LED chip. For example, a method of converting light emitted from an LED through a yellow phosphor to convert the light into white light when using a cyan LED that emits cyan light through an LED wafer is known.

Among the phosphors, well-known red phosphors include K ₂ SiF ₆ :Mn (hereinafter referred to as "KSF") and CaAlSiN ₃ :Eu (hereinafter referred to as "CASN"). The KSF phosphor and the CASN phosphor exhibit red color through light of a narrow wavelength band, and have a good color reproduction rate, and thus are suitable for use in a display.

A technique of using a quantum dot (QD) as a phosphor has recently been known. A quantum dot is a semiconductor crystal in which particles composed of hundreds to thousands of atoms are synthesized into nanometer-scale semiconductors. Even if the particle components are the same, different colors are displayed according to their sizes, and the quantum dots have good color purity, light stability, etc., so Applications in displays have also received attention.

However, although the above KSF phosphor, CASN phosphor, and quantum dot have excellent characteristics as described above, they have disadvantages of poor heat resistance and moisture resistance.

In the case where the above-described phosphor is used in order to change the luminescent color of the LED wafer, it is conceivable to use an epoxy resin or a bismuth resin and a phosphor which are used as a sealing material as in the related art, but these resins are used. Not enough to prevent moisture penetration, resulting in a decrease in the characteristics of phosphors such as KSF phosphors, CASN phosphors, and quantum dots.

The present invention has been made to solve the above problems of the prior art, and an object thereof is to provide a seal for protecting a phosphor from heat and moisture in a seal of an LED wafer including a phosphor to prevent a decrease in characteristics of a phosphor. And its manufacturing method.

Further, it is another object of the present invention to provide an LED package having the above LED chip seal.

An LED wafer seal according to an embodiment of the present invention includes: a first glass having a groove formed on one side; a second glass disposed to be in contact with one surface of the first glass and covering the groove; sealing engagement a portion for engaging the first glass and the second glass; and a phosphor inserted into the groove of the first glass.

Here, the phosphor may include a KSF phosphor, a CASN phosphor, or a quantum dot.

According to this embodiment, one side of the first glass may be formed with a plurality of grooves, and a KSF phosphor or a CASN phosphor may be inserted into one of the plurality of grooves, which is different in color from the red phosphor. A phosphor may be inserted into the other of the plurality of grooves.

The LED wafer seal according to the present embodiment may further include a lower member that may be formed on a surface opposite to the grooved surface of the first glass, the lower member being configurable for insertion of the LED wafer and Surrounding the periphery of the LED wafer.

And, the lower member may be formed by dispersing a phosphor in the glass. PIG is formed.

The first glass of the LED wafer seal according to the present embodiment may have a thickness of 50 to 500 μm, and the second glass may have a thickness of 50 to 350 μm.

A method of manufacturing an LED wafer seal according to an embodiment of the present invention may include the steps of: preparing a glass substrate; forming a plurality of grooves on one side of the glass substrate; and applying a sealing material to the glass substrate Drying around the plurality of grooves; injecting the phosphor into a plurality of grooves formed on the glass substrate; placing the glass cover on a side of the glass substrate on which the plurality of grooves are formed; The sealing material applied to the glass substrate is irradiated with laser light to bond the glass substrate and the glass cover; and the bonded body of the glass substrate and the glass cover is cut.

Wherein, the step of preparing a glass substrate to form a plurality of grooves on one side of the glass substrate comprises the steps of: drying after molding and processing the glass paste to form a plurality of green sheet units; laminating and stamping a plurality of green sheets a unit to form a green sheet; a hole processing on the green sheet; a green sheet subjected to hole processing by pasting and a green sheet not subjected to hole processing to form a glass substrate; and sintering the glass substrate.

Here, the phosphor may include a KSF phosphor, a CASN phosphor, or a quantum dot.

The sealing material may be a glass powder that absorbs infrared rays, and the laser irradiated to the sealing material may be a laser of an infrared wavelength. Also, the sealing material may include V ₂ O ₅ , BaO, ZnO, P ₂ O ₅ , TeO ₂ , Cu ₂ O, Fe ₂ O _{3 ,} and SeO ₂ .

An LED package according to an embodiment of the present invention includes an LED chip and a A seal for an LED wafer. The LED wafer is mounted on the printed circuit board in a flip-chip form, and the sealing member is located on the opposite side of the surface of the LED chip mounted on the printed circuit board. And the sealing member includes: a first glass having a groove formed on one side; a second glass disposed to be in contact with one surface of the first glass and covering the groove; and a sealing joint for engaging the first a glass and the second glass; and a phosphor, inserted into the groove of the first glass.

Here, the phosphor may include a KSF phosphor, a CASN phosphor, or a quantum dot. Also, the seal can be arranged to be spaced apart from the LED wafer in a remote manner.

According to an embodiment of the present invention, moisture permeation can be prevented by isolating the phosphor in the LED wafer seal containing the phosphor from the external environment. Further, heat can be suppressed from being transferred to the phosphor by locally heating the sealing material by laser during the manufacturing process of the LED wafer seal. Therefore, it is possible to maintain high color reproduction ratio and color purity and achieve light stability by preventing degradation of the phosphor characteristics.

100, 100'‧‧‧LED package

110, 110', 210, 310, 410‧‧‧ LED chip seals

110h’‧‧‧ hole

111‧‧‧First glass, glass substrate

111h‧‧‧ Groove

113‧‧‧Second glass and glass cover

115‧‧‧Sealed joint

115s‧‧‧ Sealing material

117‧‧‧Fertior

120‧‧‧LED chip

121‧‧‧Laminated substrate

122‧‧‧n type nitride semiconductor layer (n-GaN)

123‧‧‧Active layer

124‧‧‧p-type nitride semiconductor layer (p-GaN)

125‧‧‧p-type electrode

126‧‧‧n type electrode

130‧‧‧Sidewall, circuit board

130’‧‧‧ Sidewall

130s’‧‧‧ joints

140‧‧‧ boards

150‧‧‧ solder balls

330‧‧‧ Lower parts

S110-S170‧‧‧Steps

1 is a drawing showing an LED wafer seal in accordance with a first embodiment of the present invention.

2 is a drawing schematically showing an LED package having an LED wafer seal according to a first embodiment of the present invention.

3 is a drawing schematically showing another LED package having an LED wafer seal in accordance with a first embodiment of the present invention.

4 is a view showing an LED chip in accordance with a first embodiment of the present invention in order A sequence diagram of the manufacturing process of the seal.

Fig. 5 is a schematic view showing a manufacturing process of an LED wafer seal according to a first embodiment of the present invention.

Fig. 6 is a schematic view showing a manufacturing process of a glass substrate of an LED wafer seal according to a first embodiment of the present invention.

Figure 7 is a drawing showing an LED wafer seal in accordance with a second embodiment of the present invention.

Figure 8 is a drawing showing an LED wafer seal in accordance with a third embodiment of the present invention.

Figure 9 is a drawing showing an LED wafer seal in accordance with a fourth embodiment of the present invention.

The preferred embodiments of the present invention are described in sufficient detail to enable those skilled in the art to practice the invention. For the sake of brevity of the description, components that are not related to the description are omitted in the drawings, and the same reference numerals are used throughout the drawings.

When a constituent element referred to in the present invention is "upper" or "above" of other constituent elements, it should be understood that it may be directly above another constituent element, and other constituent elements may also exist therebetween. The sizes and the like of the respective structures shown in the drawings are only for convenience of explanation, and thus the present invention is not necessarily limited thereto. That is, one embodiment of the specific shapes, structures, and features described herein may be modified in other embodiments without departing from the spirit and scope of the invention. Further, it should be understood that in each embodiment, without departing from the spirit and scope of the invention The location and settings of the individual components can also be modified. Therefore, the following detailed description is not to be taken in a limiting

LED chip seal containing phosphor and structure of LED package

1 is a view showing an LED wafer seal according to a first embodiment of the present invention, and FIG. 2 is a view schematically showing an LED package having an LED wafer seal according to a first embodiment of the present invention. .

First, referring to FIG. 1, the LED wafer seal 110 according to the present embodiment includes a first glass 111 and a second glass 113 whose bonding faces are formed with a sealing joint 115. A surface of the first glass 111 adjacent to the second glass 113 is formed with a groove into which the phosphor 117 is inserted. At this time, the thickness of the first glass 111 may be 50 to 500 μm, and the thickness of the second glass may be 50 to 350 μm.

In the present embodiment, the phosphor 117 may be a KSF phosphor, a CASN phosphor or a quantum dot, or a tantalum resin obtained by mixing a KSF phosphor, a CASN phosphor or a quantum dot and a ruthenium resin. In the form of a phosphor in silicone (PIS). For example, a PIS is formed by mixing a KSF phosphor as a red phosphor and a yellow phosphor and an anthracene resin, which are inserted into a groove of the first glass 111 in a powder form.

The color reproduction ratios of the KSF phosphor, the CASN phosphor, and the quantum dots described above are good, but they have a problem of poor heat resistance and moisture resistance. Therefore, in the present embodiment, in order to prevent moisture from penetrating the phosphor 117 completely, the first glass 111 and the second glass 113 are completely sealed, and in the above process, it is noted that heat is not transmitted to the phosphor 117. A more complete sealing method will be described below.

Referring to FIG. 2, the LED package 100 includes an LED wafer 120, a sealing member 110 covering the upper surface of the LED wafer 120, and a sidewall 130 surrounding the side of the LED wafer 120. In the present embodiment, a chip scale package (CSP) method in which the LED chip 120 is mounted in a flip-chip form and the package and the size of the wafer are the same is employed.

The LED wafer 120 according to the present embodiment has a laminated substrate 121, an n-type nitride semiconductor layer (n-GaN) 122, an active layer 123, a p-type nitride semiconductor layer (p-GaN) 124, p-type electrodes 125, and n. A typical LED wafer structure in which the electrode 126 is formed. The present invention is not characterized by the above-described LED wafer structure, and therefore, in the present invention, an LED package can be constructed using any form of LED wafer known in the art.

As described above, the LED wafer 120 according to the present embodiment is mounted on the printed circuit board 130 in a flip-chip form. That is, the LED chip 120 is mounted in such a manner that the substrate 121 is provided on the side opposite to the surface facing the printed circuit board 140 and the p-type electrode 125 and the n-type electrode 126 are directly bonded to the printed circuit board 140 by the solder ball 150. .

The sealing member 110 of the LED wafer is formed to cover the upper surface of the LED wafer 120 that is not in contact with the printed circuit board 140, and the side wall 130 surrounding the side portion of the LED wafer 120 may be formed of a reflective member such as TiO ₂ . Thereby, the light generated by the LED wafer 120 is emitted only by the LED chip seal 110 formed of glass to realize one side of light.

In the present embodiment, the first glass 111 including the phosphor 117 and the second glass 113 serving as a lid of the phosphor 117 are completely isolated from the external environment, that is, air and moisture, by the sealing joint 115, and thus Can prevent phosphors The characteristics of 117 are reduced.

Further, since the LED wafer seal 110 has an integral glass structure, the number of mediums through which light is transmitted is small, the brightness reduction can be minimized, and the stability against high temperature and high current is compared with the case where the ruthenium resin is used as a medium. Good, so reliability can be ensured when high current is applied.

FIG. 3 is a view schematically showing another LED package having the LED wafer seal according to the present embodiment. Referring to FIG. 3, the LED package 100' includes an LED wafer 120, a sealing member 110', and a sidewall 130'. The LED wafer 120 may be mounted on the printed circuit board 140 in a flip-chip form, and the sealing member 110' may be formed by a sidewall. The 130' is supported and arranged spaced apart from the LED wafer 120 (so-called remote mode). The seal 110' and the side wall 130' can be joined by a joint member 130s' such as an epoxy resin or a silicone resin.

In addition, the sealing member according to the present embodiment may have a structure in which the phosphor 117 or the PIS containing the phosphor may be injected through the lower portion of the sealing member. For example, referring to Fig. 3, the lower portion of the sealing member 110' is formed to have a hole 110h', whereby the phosphor 117 is injected through the hole 110h' to be solidified to perform sealing. At this time, the size of the hole 110h' is capable of being injected into the phosphor 117, and is not limited to a specific size and shape.

Method for manufacturing LED chip seal containing phosphor

4 and 5 are respectively a sequence diagram and a schematic view showing a manufacturing process of the LED wafer seal according to the first embodiment of the present invention. Next, a method of manufacturing the above-described phosphor-containing LED wafer seal 110 will be described with reference to FIGS. 4 and 5.

Referring to Figures 4 and 5, in order to form the LED wafer seal 110, first prepare Glass substrate 111 (S110).

Then, a plurality of grooves 111h are formed on the glass substrate 111 (S120).

A method of forming a groove on the groove 111h may employ a green sheet process. 6 is a schematic view showing a manufacturing process of a glass substrate of an LED wafer seal according to a first embodiment of the present invention, and a method of forming a groove on a glass substrate by a green sheet process will be described below with reference to FIG.

First, (a) a glass frit and a solvent binder are slurried, molded and processed, dried, and then cut into a predetermined size to form a green sheet unit. Next, (b) after laminating the green sheet unit in the vertical direction, (c) punching it into a desired thickness to form a laminate (green sheet). Next, (d) two green sheets are prepared, and (e) one of the holes is processed. For example, hole processing can be performed by using laser. Finally, (f) the green sheet subjected to the hole processing and the green sheet not subjected to the hole processing are adhered to each other and sintered to form a glass substrate 111 having a groove.

As described above, the method of forming the groove 111h on the glass substrate 111 may employ a green sheet process, but the present invention is not limited thereto, and sand blasting, acid etching, etc. using a mask may be employed. Additional techniques known in the art. Sandblasting and acid etching are processing methods for surface treatment. In the case of sandblasting, the surface layer is scraped by spraying ceramic powder such as sand, alumina, tantalum carbide, etc. to smooth the surface of the sintered body, and in acid In the case of etching, a desired shape can be obtained by removing unnecessary portions on the surface of the sintered body.

After the plurality of grooves 111h are formed on the glass substrate, the sealing material 115s is applied around the grooves 111h to be dried (S130).

In the present embodiment, the sealing material 115s may be a low-melting glass frit composition. In the present invention, the low-melting glass refers to a glass having a glass transition temperature (Tg) of less than or equal to 400 ° C, and the glass powder refers to a glass powder obtained by finely pulverizing.

More specifically, the composition of the low-melting glass frit used as the sealing material includes V ₂ O ₅ , BaO, ZnO, P ₂ O ₅ , TeO ₂ , Cu ₂ O, Fe ₂ O _{3 ,} and SeO ₂ . The above components function as a network former or a network modifier in forming glass.

V ₂ O ₅ , P ₂ O ₅ and TeO ₂ are network formers in which V ₂ O ₅ has a low melting point characteristic and is used for improving laser absorption ability, improving flow characteristics, and lowering glass transition temperature (Tg). P ₂ O _{5 is} used to lower the glass transition temperature (Tg) and thermal expansion coefficient, and TeO _{2 is} used to ensure water resistance and chemical resistance by increasing the bonding strength of the glass.

In the network former of the present embodiment, the content of V ₂ O ₅ is 30% by weight to 60% by weight, the content of P ₂ O ₅ is 10% by weight to 20% by weight, and the content of TeO ₂ is 10% by weight to 30%. weight%.

BaO, ZnO, Cu ₂ O, Fe ₂ O ₃ and SeO ₂ are network modifiers. Among them, BaO acts as a glass stabilizing effect by lowering the glass transition temperature (Tg), which is used to improve water resistance and flow characteristics, lower the coefficient of thermal expansion, and lower the softening temperature (Tdsp). Cu ₂ O is used to lower the coefficient of thermal expansion, and Fe ₂ O ₃ and SeO _{2 are} used to increase the infrared absorption rate.

In the network modification of the present embodiment, the content of BaO is 1% by weight to 10% by weight, the content of ZnO is 1% by weight to 10% by weight, and the content of Cu ₂ O is 1% by weight to 5% by weight, and Fe ₂ The content of O ₃ is less than or equal to 5% by weight, and the content of SeO ₂ is from 10% by weight to 30% by weight.

In the present embodiment, since the sealing material 115s is formed of the glass frit composition as described above, the glass transition temperature (Tg) is 300 to 400 ° C, and the softening temperature (Tdsp) is 400 to 500 ° C at 800. The infrared absorption rate of the ~820 nm wavelength band is greater than or equal to 80%. According to the above characteristics, the workpiece is less affected by heat due to its excellent low-temperature workability, and when the infrared laser is irradiated, the laser is easily absorbed, so that melting can be achieved at a low temperature. Thus, by melting the laser without heating the entire glass, the desired portion can be locally heated at a lower temperature equal to or lower than 400 ° C to effect sealing. Further, the sealing material 115s has a high water resistance of about 10 x 10 ^-7 g/m ² /day to 1 x 10 ^-4 g/m ² /day, so that high airtight maintenance can be ensured.

After the sealing material 115s is applied onto the glass substrate and dried, the phosphor 111 is injected into the groove 111h (S140).

The phosphor 117 in this embodiment may be a KSF phosphor, a CASN phosphor or a quantum dot as described above, or a mixed KSF phosphor, a CASN phosphor or a quantum dot and an anthracene resin. Into the PIS.

After the phosphor 117 is injected, the glass cover 113 is placed on the surface of the glass substrate 111 on which the plurality of grooves are formed (S150), and then the sealing material 115s coated on the glass substrate is irradiated with laser light (S160).

The laser may employ an infrared laser having a wavelength of about 800 to 820 nm, and the sealing material 115s is melted at a low temperature by the laser to form a sealing joint 115 to effect bonding of the glass substrate 111 and the glass cover 113.

In the present embodiment, the sealing is achieved by local heating by irradiation of laser light, so that the phosphor 117 is not affected by heat, thereby preventing the phosphor from being irradiated. 117 changes in characteristics.

Next, the bonded body of the glass substrate 111 and the glass cover 113 is cut (S170). The cutting may be performed along the sealing joint 115, but the invention is not limited to this manner.

By using the above-described process to form an LED chip seal containing a phosphor, in the case of using a phosphor having poor heat resistance and moisture resistance such as a KSF phosphor, a CASN phosphor, or a quantum dot, It is possible to suppress a decrease in characteristics and to realize a light-emitting element having high color reproduction ratio, good color purity, and light stability.

Modification of LED wafer seal structure

Various modifications can be made to the structure of the LED wafer seal. 7 to 9 are drawings showing LED chip seals according to second to fourth embodiments of the present invention, respectively. Various forms of the LED wafer seal will now be described with reference to Figs. 7 through 9.

Referring to Fig. 7, an LED wafer seal 210 according to a second embodiment of the present invention is formed into a shape in which a plurality of LED wafer seals 110 according to the first embodiment are connected. That is, in the LED wafer seal 210 of the present embodiment, the first glass is formed with a plurality of grooves to constitute a structure capable of accommodating a plurality of phosphors. Fluorescent bodies different from each other can be injected into a plurality of grooves. For example, a KSF phosphor or a CASN phosphor of a red phosphor may be injected in one groove, and a green phosphor may be injected in the other groove.

Referring to Fig. 8, an LED wafer seal 310 according to a third embodiment of the present invention is formed by further including a lower member 330 surrounding the LED wafer in the lower portion of the LED wafer seal 110 according to the first embodiment. Lower part 330 can be large Formed by a phosphor in glass (PIG) formed by mixing glass and a yellow phosphor, or a surface adjacent to the first glass and the second glass is formed of glass or PIG, and surrounds the LED A portion of the side of the wafer is formed by a reflective member.

As described above, the LED wafer seal according to the third embodiment is formed to surround the side of the LED wafer, so that the sealing process can be simplified after the LED wafer is mounted. That is, in the present embodiment, after mounting the LED wafer, it is not necessary to additionally perform a process and mounting for mounting a member for reflecting or shielding light emitted from the LED wafer (for example, the reflective member in the first embodiment) for mounting The process of the member that transmits light (for example, the sealing member in the first embodiment) can be performed by a process of covering with the seal 310 formed in advance, and therefore, the manufacturing process of the LED package can be greatly simplified.

Referring to Fig. 9, an LED wafer seal according to a fourth embodiment of the present invention is formed into a shape in which a plurality of LED wafer seals 310 according to the third embodiment are connected. That is, in the LED wafer seal 410 of the present embodiment, the first glass is formed with a plurality of grooves to accommodate a plurality of phosphors, and the lower end of the first glass is formed with a groove that can seal a plurality of LED chips . As in the second embodiment, phosphors different from each other can be injected into a plurality of grooves.

The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but those skilled in the art to which the present invention pertains can understand that they can be implemented as other without changing the technical idea or essential features of the present invention. Specific form. Therefore, it should be understood that the above-described embodiments are illustrative and non-restrictive in all aspects.

110‧‧‧LED chip seals

111‧‧‧First glass, glass substrate

113‧‧‧Second glass and glass cover

115‧‧‧Sealed joint

117‧‧‧Fertior

Claims (15)

An LED wafer seal, comprising: a first glass having a groove formed on one side; a second glass disposed to contact one surface of the first glass and covering the groove; sealing the joint, For engaging the first glass and the second glass; and a phosphor, inserted into a groove of the first glass. The LED wafer seal of claim 1, wherein the phosphor comprises a KSF phosphor, a CASN phosphor or a quantum dot. The LED wafer seal of claim 1, wherein one side of the first glass is formed with a plurality of grooves, and a KSF phosphor or a CASN phosphor is inserted into one of the plurality of grooves, red A phosphor and phosphors of different colors are inserted into the other of the plurality of grooves. The LED wafer seal of claim 1, further comprising a lower member formed on an opposite side of the grooved surface of the first glass, the lower member being configured for an LED chip Insert and surround the periphery of the LED wafer. The LED wafer seal of claim 4, wherein the lower member is formed of a PIG in which a phosphor is dispersed in the glass. The LED wafer seal of claim 4, wherein one side of the first glass is formed with a plurality of grooves, and a KSF phosphor or CASN phosphor is inserted into one of the plurality of grooves, green The phosphor is inserted into The other of the plurality of grooves. The LED wafer seal of claim 1, wherein the first glass has a thickness of 50 to 500 μm, and the second glass has a thickness of 50 to 350 μm. A method for manufacturing an LED wafer seal, comprising the steps of: preparing a glass substrate to form a plurality of grooves on one side of the glass substrate; and applying a sealing material to the plurality of glass substrates Around the grooves, drying; injecting the phosphor into a plurality of grooves formed on the glass substrate; placing the glass cover on a side of the glass substrate on which the plurality of grooves are formed; The sealing material on the glass substrate is irradiated with laser light to bond the glass substrate and the glass cover; and the bonded body of the glass substrate and the glass cover is cut. The method of manufacturing the LED wafer seal of claim 8, wherein the step of preparing the glass substrate to form a plurality of grooves on one side of the glass substrate comprises the steps of: drying after molding and processing the glass paste, Forming a plurality of green sheet units; laminating and stamping a plurality of green sheet units to form green sheets; and performing hole processing on the green sheets; The glass substrate is formed by bonding a green sheet subjected to hole processing and a green sheet not subjected to hole processing; and sintering the glass substrate. A method of fabricating an LED wafer seal according to claim 8, characterized in that the phosphor comprises a KSF phosphor, a CASN phosphor or a quantum dot. The method of manufacturing the LED wafer seal of claim 8, wherein the sealing material is a glass powder that absorbs infrared rays, and the laser that irradiates the sealing material is a laser of an infrared wavelength. A method of manufacturing an LED wafer seal according to claim 11, wherein the sealing material comprises V ₂ O ₅ , BaO, ZnO, P ₂ O ₅ , TeO ₂ , Cu ₂ O, Fe ₂ O ₃ and SeO _{2 .} . An LED package comprising an LED chip and a seal of the LED chip, wherein the LED chip is mounted on a printed circuit board in a flip-chip form, the seal being located on the printed circuit of the LED chip a face opposite the plate, and the seal comprises: a first glass formed with a groove on one side; a second glass disposed to contact one side of the first glass and covering the groove; sealing engagement a portion for engaging the first glass and the second glass; and a phosphor inserted into the groove of the first glass. The LED package of claim 13, wherein the phosphor comprises a KSF phosphor, a CASN phosphor or a quantum dot. The LED package of claim 13, wherein the seal is arranged to be spaced apart from the LED wafer in a remote manner.