JP4516378B2 - Semiconductor light emitting device - Google Patents

Description

The present invention relates to, for example, a semiconductor light-emitting device using a light-emitting color conversion member for converting the light from the light source that emits ultraviolet light or blue light to white other colors of light. More particularly, with respect to light in the ultraviolet and a high output of the light source, in light emitting color conversion member is not discolored for a long time, a semiconductor light-emitting device using a light-emitting color conversion member having a stable quality.

  2. Description of the Related Art A light emitting device that converts the light emission color of a light source, such as a white light emitting device by providing a light emitting color conversion member on the surface of a blue light emitting or ultraviolet light emitting semiconductor light emitting element (hereinafter also referred to as LED), is used. Such a luminescent color conversion member is used, for example, by dispersing an yttrium, aluminum, garnet (YAG) -based fluorescent material in a translucent resin such as an epoxy resin so as to cover an LED chip or the like. . However, when the emission color of a light source such as an LED is converted using an emission color conversion member in which such a phosphor is dispersed in a translucent resin, light with a short wavelength such as ultraviolet light or luminance When converting light from a large light source, the temperature of the resin with poor heat dissipation characteristics rises, causing the translucent resin to change color, changing the color of the converted light, reducing the brightness, and changing the color of the emitted light. There is a problem that.

In order to solve such a problem, it is considered to disperse and sinter the oxide phosphor in glass. However, even in this case, if the fluorescent material is dispersed in the glass having a low softening point, the glass and the fluorescent material react with each other, so that the sintered body becomes dark and the luminous efficiency is greatly reduced. As shown in FIG. 6, the phosphor 32 is dispersed in a glass 31 such as a B ₂ O ₃ —SiO ₂ system having a softening point higher than 500 ° C. (preferably 600 ° C. or higher). It has been proposed to use a long-life luminescent color conversion member (see, for example, Patent Document 1).
JP 2003-258308 A

  As described above, when the emission color of the light source is converted by the emission color conversion member in which the phosphor is dispersed in the glass body, if the glass is dispersed in a glass having a low softening point containing PbO or the like, the glass changes color. Therefore, it can be dispersed only in glass having a softening point of at least 500 ° C. or higher. Therefore, for example, when an emission color conversion member is used so as to cover the LED chip, the emission color conversion member can be used at a low temperature such that the electrode of the LED chip cannot withstand the temperature and cannot be used. If you want to apply, there is a problem that you can not use.

  In addition, for example, when directly covering an LED chip or making contact over a wide area, if the thermal expansion coefficients of the LED chip and the luminescent color conversion member do not match, the counterpart component such as the LED chip is damaged. Or the glass is brittle, so that the glass may crack and impede the transmission of light. Therefore, it is necessary to consider the thermal expansion coefficient, etc., and together with the above-mentioned softening point, the use of the luminescent color conversion member is limited, and even when a semiconductor light emitting device is formed, it is necessary to devise its usage.

  Furthermore, for example, in sulfide-based phosphors, sulfur oxides and the like are scattered in the air by reacting with moisture in the air in a state of storage before being mixed with a resin or glass body, thereby releasing harmful substances. There is also a problem.

The present invention has been made to solve such problems, and even if a fluorescent material for luminescent color conversion made of sulfide is left in the air, it does not change at all and does not release harmful substances. Using stable phosphor powder for luminescent color conversion, even if the phosphor is dispersed in a glass body containing Pb or the like to lower the softening point, the glass does not react with the phosphor and the quality is stable. By using such a light emitting color conversion member , the light of the LED chip that emits light with a short wavelength such as ultraviolet light or light with high luminance is converted into light of a desired color such as white light. It is an object of the present invention to provide a semiconductor light emitting device having a structure capable of improving reliability with stable characteristics in which the color tone and emission color do not change over a long time even when converted, and the luminance does not decrease . The

A semiconductor light emitting device according to the present invention is a semiconductor light emitting device having a light emitting element chip and a light emitting color conversion member provided on at least a light emitting surface side of the light emitting element chip, wherein the light emitting color conversion member is phosphor particles. A porous material formed by using a phosphor-containing glass powder provided with a glass film made of silicate glass or borosilicate glass around the phosphor , and the luminous color conversion member agglomerates the phosphor-containing glass powder It is formed by filling the gap between the glass bodies with a resin resistant to ultraviolet light .

Contact name and back surface of the substrate means the surface opposite to the side where the semiconductor lamination portion of the substrate is provided.

According to the phosphor-containing glass powder used in the semiconductor light-emitting device of the present invention, since the glass film made of silicate glass or borosilicate glass is provided around the phosphor particles such as YAG, the phosphor is applied to the glass film. Pb and the like which are easy to react with the phosphor are not included, and the phosphor particles and the glass coating do not react and the glass coating is not discolored. This phosphor-containing glass powder contains Pb or the like having a low softening point. Even if dispersed in the glass body, the glass coating film becomes a barrier layer, so that the phosphor particles do not react with Pb or the like. Furthermore, since each phosphor particle is covered with a glass coating, even if the phosphor particle is a harmful substance such as a sulfide, It is stable, does not react at all, does not scatter harmful substances, and does not change in quality.

  In order to form such a glass film, for example, Si or B such as silicic acid or borosilicate is used as a metal alkoxide, an organic solvent such as ethanol, an inorganic base such as ammonia water, or hydrochloric acid or sulfuric acid. Mixing and stirring together with inorganic acid, etc., and mixing and stirring the phosphor particles in it, the silicate glass and borosilicate glass particles adhere to the outer periphery of the phosphor particles, and the outer periphery of the phosphor particles A glass coating can be formed. The glass coating can be formed thicker as the reaction time is longer, but the thickness is such that a material that reacts with a phosphor substance such as Pb does not penetrate, that is, several hundred nm to several μm. What is necessary is just to form in the thickness of a grade.

  Since such phosphor-containing glass powder is coated with phosphor particles with a glass film having a high softening point, even if this phosphor-containing glass powder is dispersed in a glass body having a low softening point containing Pb or the like. The glass film having a high softening point serves as a barrier layer, and Pb, Bi, etc. contained in the glass body having a low softening point do not react with the phosphor particles. That is, it is possible to form an emission color conversion member in which phosphor particles are dispersed in a glass body that can be sintered at a low temperature of about 300 ° C. or higher. As a result, it is possible to form a road sign having a stable luminescent color conversion member while sintering glass at a low temperature, for example, a road sign that is displayed in a color that is conspicuous by an automobile headlight. it can.

  In addition, according to the semiconductor light emitting device of the present invention, since the phosphor-containing glass powder in which the phosphor particles are coated with a glass film having a high softening point that does not contain Pb or the like is used, the glass reacts with the phosphor particles. The light emitting device does not change color and does not change color even when irradiated with ultraviolet light or high luminance light from the LED chip, and a light emitting device with very stable emission color and luminance can be obtained.

  By providing an emission color conversion member in which this phosphor-containing glass powder is dispersed in a glass body containing Pb or Bi on the one surface of the semiconductor laminate or the back surface of the substrate, the sintering temperature of the glass body can be lowered, and the LED Since the light emitting color conversion member can be provided before forming the electrode of the chip, there is no need to extremely lower the sintering temperature and there is no problem of reaction with the phosphor. It can form in the glass body of the component which united. As a result, the LED chip and the luminescent color conversion member in which the phosphor particles are dispersed in the glass body can be combined.

The fluorescent in the porous glass body by the phosphor-containing glass powder in its pores within even by filling resistance Noah Ru resin to ultraviolet light, such as a silicone resin, the LED chip and the glass body It is also possible to obtain a semiconductor light emitting device having a desired light emission color by combining with a light emission color conversion member in which body particles are dispersed. With such a configuration, since the porous gap is filled with a silicone resin having the same refractive index as that of the glass body without sintering the glass body, the light from the LED chip is converted into the phosphor. The contained glass powder can be emitted while being color-converted. In this case, silicone resin, etc. is elastic, so it can absorb the difference in thermal expansion coefficient, and even if it is elastic and soft, the outer shape is determined by the porous glass body, There is nothing to do.

Next, a phosphor-containing glass powder used semiconductor light-emitting device and that of the present invention with reference to the accompanying drawings, the description about the light emitting color conversion member. The semiconductor light emitting device phosphor-containing glass powder 3 that used in the present invention, as cross-sectional illustration of an example thereof is shown in FIG. 1, a glass coat 2 around the phosphor particles 1 contains no Pb or Bi It is characterized by being covered.

  The phosphor particle 1 is a fluorescent substance particle that emits light of different wavelengths in response to ultraviolet light or visible light, and has an average particle size of about 3 to 50 μm, preferably about 5 to 10 μm. ing. Fluorescent materials include yttrium, aluminum, garnet (YAG) activated by cerium, oxide fluorescent materials such as magnesium oxide and titanium activated by manganese, perylene derivatives, copper and aluminum. An activated sulfide fluorescent material such as zinc cadmium sulfide can be used.

Since the glass coating 2 forms a barrier so that a substance that easily reacts with a fluorescent material such as Pb or Bi does not come into contact with the fluorescent material, the glass coating 2 is formed with a thickness that does not allow impurities such as Pb and Bi to penetrate. If it is thick, there is no problem if it is too thick, but it takes time. For example, it is formed to a thickness of about several hundred nm to several μm. As a material for the glass coating, a silicate glass (1 wt% or less) such as PbO or Bi ₂ O ₃ that does not contain an element that has a low softening point and easily reacts with a fluorescent substance such as Pb or Bi as constituent elements is used. A material mainly composed of (SiO ₂ glass) or borosilicate glass (B ₂ O ₃ —SiO ₂ glass) can be used, and these may contain BaO, ZnO, or the like. However, when MnO, Fe ₂ O ₃ , CeO ₂ or the like is contained, the glass is discolored by ultraviolet light, so that it is preferable that the glass is not substantially contained (1000 ppm or less).

Such a phosphor powder can be produced by a sol-gel method called a so-called Stover method. That is, for example, in order to form a silicate glass film, a silicon alkoxide compound such as tetraethoxysilane (Si (OC ₂ H ₅ ) ₄ ), ethanol, water and ammonia are used at a molar ratio of 1: x: y: z. Mix in proportions (molar ratio; 20 ≦ x ≦ 400, 10 ≦ y ≦ 200, 10 ≦ z ≦ 40). The aforementioned phosphor particles 1 are mixed with this mixed liquid and reacted while stirring, whereby glass particles adhere to the periphery of the phosphor particles 1 to form a glass coating 2. By changing the ratio (y) of water and silicon described above, the size of the glass particles can be arbitrarily adjusted. The particle size of the silica glass is about 30 to 800 nm. Further, the longer the reaction time, the thicker the glass coating 2 can be made. Therefore, a desired dense film can be formed with a desired film thickness.

Even in the case of using other glass components, the desired metal alkoxide compound is formed in the same manner, and the mixture liquid mixed with ethanol, water and ammonia is mixed and the phosphor particles are mixed and stirred. It can manufacture similarly. For example, to form the above-mentioned borosilicate glass coating, instead of tetraethoxysilane described above _{(Si (OC 2 H 5)} 4), tetraethoxysilane _{(Si (OC 2 H 5)} 4) B (OCH (CH ₃ ) ₂ ) ₃ can be obtained in the same manner using a mixture of (CH ₃ ) ₂ ) ₃ in a molar ratio of 4: 1 to 2: 1.

  According to the phosphor powder of the present invention, it does not contain an element that easily reacts with a phosphor such as Pb or Bi, and has a high softening point (for example, 800 ° C. for silicate glass and 650 ° C. for borosilicate glass). Since it is a coated powder, it is very stable even when stored in the air, and even if the phosphor material is sulfide, it does not come into direct contact with moisture in the air, and sulfur oxides due to oxidation etc. Can be kept very stable without any occurrence. In addition, even in the case of a luminescent color conversion member described later, even if this powder is dispersed in glass containing PbO or the like having a low softening point, the phosphor substance itself is covered with a stable glass coating, The fluorescent substance does not react with Pb or the like to change or change color.

  The luminescent color conversion member 5 according to the present invention has a glass coating 2 that does not contain Pb or Bi around the phosphor particles 1, as shown in FIG. Is dispersed in a glass body 4 containing Pb. For example, as shown in FIG. 1 described above, the phosphor-containing glass powder 3 is provided with a glass coating 2 that does not contain Pb or Bi on the outer periphery of the phosphor particles 1. About 1 to 10 wt% is dispersed with respect to the weight.

  The glass body 4 is made of, for example, silicate glass or borosilicate glass mixed with about 5 to 85 wt% of lead glass (PbO). By mixing PbO with 50 wt% or more, the softening point is set to about 600 ° C. Can be lowered. In addition, since this glass body 4 will deteriorate resin used for adhesion | attachment or a mold, when an alkali metal oxide is contained, it is preferable not to contain.

  In order to manufacture such a light emitting color conversion member, a glass material that can obtain a desired thermal expansion coefficient or softening point, such as TEOS or TEOPb, which is an organic metal compound of a glass material, is used, such as ethanol, as described above. The mixture is mixed with an organic solvent while stirring, and a small amount of an inorganic base such as aqueous ammonia or an inorganic acid such as hydrochloric acid or sulfuric acid is further added and stirred, and heated to 20 to 80 ° C. Then, it gelatinizes by adding the above-mentioned fluorescent substance containing glass powder and stirring. This gelled product is put into a desired shape or in a desired container, dried by heating to 100 to 200 ° C., and further sintered at a sintering temperature corresponding to a glass component of about 300 to 800 ° C. It is done. As the glass material, TEOAl, TEOFe, TEOTi, and the like can be used as the low melting point glass material in addition to the above-described examples.

  According to the luminescent color conversion member of the present invention, since the fluorescent material is dispersed in the glass without using a resin, it can be discolored or deteriorated even with ultraviolet light or light with high luminance. In addition, a very stable luminescent color conversion member can be obtained without changing the luminance. Moreover, since the glass body contains lead glass having a low softening point, the softening point can be lowered to about 300 ° C. by adjusting the content and components thereof, and the use of the luminescent color conversion member, etc. Thus, the softening point can be lowered or the expansion coefficient can be adjusted. On the other hand, the fluorescent material has a high softening point and is covered with a glass coating that does not substantially contain an element that easily reacts with the fluorescent material such as Pb or Bi. Therefore, Pb for lowering the softening point in the glass body 4 is used. Even if it is contained, the fluorescent substance and Pb do not react. That is, it is possible to obtain a luminescent color conversion member having a very stable quality, which can be cured at a desired temperature according to the purpose, and does not change in quality even with respect to ultraviolet light or high luminance light.

  In addition, since the phosphor powder is solidified with a glass body instead of a resin, a very stable luminescent color conversion member can be obtained even when placed outdoors in a place with a lot of dust or a place where the temperature changes drastically. At the same time, since sintering can be performed at a low temperature of about 300 ° C., for example, a desired shape can be made very easily by using a mold or the like. As a result, for example, it can be used for road signs, etc., so that it can display and warn with colored signs when it receives a headlight of an automobile. is there.

  FIG. 3 is a cross-sectional view of an example in which this light emission color conversion member is applied to a semiconductor light emitting device and a partially enlarged explanatory view. That is, the example shown in FIG. 3A is an example of a white light semiconductor light emitting device, and blue light is turned white by a light emitting color conversion member 5 such as YAG (yttrium, aluminum, garnet) phosphor. An example is shown. The YAG phosphor absorbs the blue light emitted from the LED chip and converts it into yellow, and the yellow light is mixed with the blue light emitted from the LED chip to make it white, but it is not a YAG phosphor. However, for example, an LED chip that emits near-ultraviolet light and a phosphor that is excited by near-ultraviolet light and emits red, blue, and green light, respectively, may be configured to convert to white. A color conversion member for conversion can be used. Therefore, the light emitting element chip (LED chip 6; the state of the wafer before being divided into chips in FIG. 3 is shown, and two chips are shown) is formed of a nitride semiconductor, and its semiconductor laminated portion On one surface 17, a luminescent color conversion member 5 is provided in which a phosphor-containing glass powder 3 in which the glass coating 2 described above is formed around a YAG phosphor particle 1 is dispersed in a glass body 4 containing Pb. In addition, as a light emitting element, it is not restricted to the case where the LED chip 6 shown in FIG. 3 is one, but also in the case of a block LED chip using a plurality of chips as one unit.

  Here, the nitride semiconductor means a compound in which a group III element Ga and a group V element N or a part or all of a group III element Ga is substituted with other group III elements such as Al and In, and / or Alternatively, it refers to a semiconductor made of a compound (nitride) in which a part of N of the group V element is substituted with another group V element such as P or As.

As in the example shown in FIG. 2A, the luminescent color conversion member 5 is a YAG phosphor particle 1 that converts blue light into white, as shown in FIG. The phosphor-containing glass powder 3 in which the glass coating 2 is formed around is dispersed in a glass body 4 containing Pb in a weight ratio of about 5 to 70%. The YAG phosphor absorbs blue light emitted from the LED chip 3 and converts it into yellow, and the yellow light is mixed with the blue light emitted from the LED chip 3 to make white. The material of the glass body 4 is selected so that the thermal expansion coefficient can be matched with the thermal expansion coefficient of the LED chip 6. In this case, when the light emitting color conversion member is sintered on one surface of the semiconductor layer of the LED chip 6, the LED chip has the sapphire substrate 11, which is the thickest, and thus the thermal expansion coefficient of this sapphire substrate is 7.4 × 10 6. It is preferable to adjust the components so that the thermal expansion coefficient is about 7 to 7.8 × 10 ⁻⁶ / K in accordance with ⁻⁶ / K. Such a thermal expansion coefficient can be obtained, for example, by mixing PbO: SiO ₂ : B ₂ O ₃ at a molar ratio of 7: 2: 1.

  Further, as shown in FIG. 3C, the luminescent color conversion member 5 has a red conversion fluorescence in which a glass film 2 is formed around the phosphor particles 1a that convert ultraviolet light into red. The body-contained glass powder 3a, the green-converting phosphor-containing glass powder 3b in which the glass coating 2 is formed around the phosphor particles 1b that convert ultraviolet light into green, and the phosphor particles 1c that convert ultraviolet light into blue The blue-converted phosphor-containing glass powder 3c having the glass coating 2 formed around is mixed in such a ratio that the mixed color is just white, and the whole becomes the above-mentioned ratio in the glass body 4 containing Pb. It may be formed by dispersing in this manner.

  The manufacturing method of this semiconductor light emitting device will be described with reference to the manufacturing process diagram shown in FIG. In FIG. 4, only one chip is shown, but in reality, a large number of chips are formed simultaneously on the wafer and finally divided into each chip.

  First, as shown in FIG. 4A, on a sapphire substrate 11, for example, a low-temperature buffer layer 12 made of, for example, GaN is about 0.005 to 0.1 μm, and then a high-temperature buffer layer 13 made of undoped GaN is 1 The n-type layer 14 made of an AlGaN-based compound semiconductor layer doped with Si that becomes a barrier layer (a layer having a large band gap energy) is about 1 to 5 μm, and the band gap energy is higher than that of the barrier layer. An active layer 15 having a multiple quantum well (MQW) structure in which 3 to 8 pairs of a small material, for example, a well layer made of an InGaN-based compound of 1 to 3 nm and a barrier layer made of 10 to 20 nm of GaN is stacked. A p-type barrier layer (a layer having a large band gap energy) composed of a p-type AlGaN compound semiconductor layer and p-type Ga A p-type layer 16 composed of a contact layer composed of N is sequentially laminated to a thickness of about 0.2 to 1 μm, thereby forming a semiconductor multilayer portion 17.

  The undoped high-temperature buffer layer 13 is an undoped first layer grown at a high temperature in order to improve the crystallinity of the laminated gallium nitride compound semiconductor layer. When the substrate is conductive, Will not be undoped. The p-type layer 16 is preferably an AlGaN-based compound layer or a GaN layer, although a layer containing Al is preferably provided on the active layer 15 side from the viewpoint of the carrier confinement effect. The n-type layer 14 can also be formed of other gallium nitride compound semiconductor layers or multiple layers. Furthermore, in this example, the active layer 15 is sandwiched between the n-type layer 14 and the p-type layer 16, but a pn junction structure in which the n-type layer and the p-type layer are directly joined is also possible. Good.

  Thereafter, as shown in FIG. 4B, the aforementioned light emission color conversion member 5 is formed on the semiconductor stacked portion. That is, the above-mentioned glass material and phosphor-containing glass powder mixed and gelated are applied onto the p-type layer 16, dried by heating, and further sintered to luminescent color conversion member 5 on the semiconductor laminate. Form. The luminescent color conversion member 5 is formed to a thickness of about 50 to 200 μm so as to be a new substrate as will be described later.

  Thereafter, as shown in FIG. 4C, the front and back of the wafer are reversed and laser light is irradiated from the back side of the sapphire substrate 1 to heat the gallium nitride layer at the boundary between the sapphire substrate 1 and the semiconductor stack. Then, the sapphire substrate is peeled off. Thereafter, the peeled portion of the semiconductor layer is removed by polishing or etching to expose the n-type layer 14 as shown in FIG. When the emitted light is ultraviolet light, it is better to remove the GaN layer as much as possible because the GaN layer absorbs the ultraviolet light, but when it is blue, the high temperature buffer layer 13 is an n-type layer. The n-type layer may be used.

  Thereafter, as shown in FIG. 4E, a part of the semiconductor stacked portion 17 is removed by etching to expose the p-type layer 16. Thereafter, as shown in FIG. 4F, the p-side electrode 18 is formed on the exposed p-type layer 16, and the n-side electrode 19 is formed on the surface of the n-type layer 14. Then, the groove 5a is formed by half-cutting with a thick blade from the side of the light emitting color conversion member 5 in the portion divided into each chip, and the light emitting surface side is narrowed as shown in FIG. A convex light emitting device can be obtained. And it is divided | segmented into each chip | tip by cut | disconnecting at the bottom part of a ditch | groove. However, it is not always necessary to form such a concave groove 5a, and it may be directly cut into a square shape.

  In the above-described example, the n-side electrode 19 is exposed on the exposed surface of the n-type layer 14 exposed by removing the substrate and the buffer layer, and the p-type layer 16 exposed by etching away a part of the semiconductor stacked portion 17 is p-side. Although the electrode is formed, the substrate can be removed by this, so that it can be thinned, and when the emitted light is ultraviolet light, the buffer layer is formed of a GaN compound, Although it has the property of absorbing ultraviolet light, the GaN layer that absorbs the light can be removed, so that the light emission efficiency can be improved. However, such peeling is not necessarily required depending on the light emission color of the LED or the light absorption characteristics of the laminated semiconductor layer or substrate. In this case, a method similar to the method of forming the light emitting color conversion member 5 on the back surface of the sapphire substrate 11 after forming the above-described semiconductor stacked portion and then forming the electrode on the normal semiconductor stacked portion. Can be manufactured.

  According to the semiconductor light emitting device of the present invention, since the light emitting color conversion member is directly provided in the semiconductor laminated portion, a white light emitting LED chip having the same size as a normal LED chip can be obtained. Furthermore, with this configuration, since the light emitting color conversion member can be provided before the electrode is formed, it can be sintered at a sintering temperature corresponding to the components of the glass body, and the thermal expansion coefficient is adapted. The glass body can be a component. Further, since it is not necessary to extract light from the side where the electrodes are provided, the n-side electrode 19 and the p-side electrode 18 can be provided on almost the entire surface of the n-type layer 14 and the surface of the p-type layer 16 exposed by etching. In addition, the current can be efficiently spread over almost the entire surface of the light emitting portion of the LED chip, and there is nothing to block the light on the light emitting surface side, so that the light extraction efficiency is greatly improved. Furthermore, since it can be mounted in a flip-chip format, it is directly connected to the circuit board by an electrode near the side that emits light and generates heat, and since heat conduction is good, the heat dissipation effect is excellent and the reliability of the LED is improved. Can be improved. In the above-described example, the light emission color conversion member 5 is directly provided on the p-type layer 16. However, when current diffusion in the p-type layer 16 is not sufficiently performed, a ZnO layer, ITO, etc. The translucent conductive layer can also be interposed.

  As described above, there are various merits by providing the light emission color conversion member 5 directly on one surface of the semiconductor stacked portion 17, but even in the case of a semiconductor light emitting device, it is not limited to such a structure. For example, a lamp-type structure as shown in FIG. 5 can also be formed. That is, in FIG. 5A, the LED chip 23 is bonded in the recess 21a formed from the end surface of the plate-like body to the tip portion of the first lead 21 formed from the plate-like body, and one electrode thereof is The first lead 21 is electrically connected, and the other electrode is electrically connected to the tip of the second lead 22 similarly formed of a plate-like body by a wire 24, and the periphery of the second lead 22 is converted to light emission color. The structure is covered with the member 25. The light emission color conversion member 25 is gelled by the same method as in the case of manufacturing the light emission color conversion member shown in FIG. 2, and the LED chip 23 is formed by a lead frame in a mold in which a dome-shaped recess is formed. Is inserted, filled with the gel color of the luminescent color conversion member 25, and dried by heating, whereby the luminescent color conversion glass powder 3 and ordinary glass as shown in FIG. The porous glass body 25a is obtained by agglomerating the powder 5b, and thereafter, the void 7 is obtained by filling a resin 7 that is resistant to ultraviolet light such as a silicone resin.

  In order to fill the porous body with resin or the like, for example, after the porous glass body is formed in the mold, the resin is injected from one end of the mold and vacuumed from the other end of the mold. The voids can be filled by this method. By adopting such a structure, while using the phosphor-containing glass powder, a light emitting device can be formed without sintering at a high temperature, and the material of the glass powder can be freely selected, and the electrode can be used. Even after the formation, the light-emitting color conversion member can be covered. Further, since not only the glass body but also a resilient material such as silicone resin is interposed between the glass powders, elasticity is generated in the light emitting color conversion member itself, and the thermal expansion coefficient is between the LED chip and the LED chip. Even if there is a difference, cracks in the glass and wire breakage are less likely to occur.

  In each of the above-described examples, the ultraviolet light is white. However, the present invention is not limited to this example, and white light can be obtained by using phosphor particles having a color complementary to the light emission color of the LED. In addition, the emission color of the LED and the conversion color of the emission color conversion member can be set according to the desired emission color.

It is an enlarged cross-sectional illustration of an example of a phosphor powder that is used in a semiconductor light-emitting device of the present invention. It is a cross-sectional and partially enlarged illustration of a luminous color converting member that is used in a semiconductor light-emitting device of the present invention. It is sectional drawing which shows the cross-section which shows one Embodiment of the semiconductor light-emitting device by this invention, and the structural example of the luminescent color conversion member. It is a figure explaining the manufacturing process of the semiconductor light-emitting device of FIG. It is explanatory drawing which shows the other example of the semiconductor light-emitting device by this invention. It is sectional explanatory drawing which shows the structural example of the luminescent color conversion member using the conventional glass.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Phosphor particle 2 Glass coating 3 Phosphor containing glass powder 4 Glass body 5 Luminescent color conversion member 6 LED chip

Claims (1)

A semiconductor light emitting device having a light emitting element chip and a light emitting color conversion member provided on at least a light emitting surface side of the light emitting element chip, wherein the light emitting color conversion member is formed of silicate glass or borosilicate around phosphor particles. It is formed by using a phosphor-containing glass powder provided with a glass film made of an acid glass , and the luminescent color conversion member has ultraviolet light in a gap between the porous glass bodies in which the phosphor-containing glass powder is aggregated. Light-emitting device formed by filling a resin that is resistant to heat .

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