TW201735213A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

To provide a substrate processing apparatus and a substrate processing method which allow for enhancement of substrate processing efficiency. A substrate processing apparatus includes a retreat chamber 31, a pair of processing chambers 21 provided with the retreat chamber 31 interposed therebetween, a heater 32 provided movably in the retreat chamber 31 and in the pair of processing chambers 21, and functioning as a processing section for supplying process liquid onto the substrate W in the processing chamber 21, and heating the process liquid on the substrate W, and a heater movement mechanism 33 functioning as a movement mechanism for moving the heater 32 in the retreat chamber 31 and in the pair of processing chambers 21.

Description

Substrate processing apparatus and substrate processing method

Embodiments of the present invention relate to a substrate processing apparatus and a substrate processing method.

The substrate processing apparatus is a device that performs various surface treatments (etching treatment, cleaning treatment, rinsing treatment, drying treatment, and the like) on various substrates such as a semiconductor wafer, a photomask glass substrate, and a liquid crystal glass substrate. In the substrate processing apparatus, in view of processing uniformity or reproducibility, a single leaf method in which one substrate is processed in a dedicated processing chamber is often used. Further, when the substrate to be processed is a dedicated cartridge, for example, when the substrate is a semiconductor wafer, it is housed in a FOUP (front open wafer cassette). Therefore, a dedicated unit for taking out and accommodating the substrate exclusively from the dedicated cassette is provided. As the dedicated unit, for example, EFEM (a combination of a FOUP opener and a transfer robot) is used.

The substrate in the dedicated cassette is taken out from the dedicated cassette by the transfer robot of the dedicated unit, transported to the processing chamber, and processed in the processing chamber. Since the treatment uses a chemical solution, in order to prevent the air in the treatment chamber from spreading to the surroundings, it is usually kept at a lower pressure than the surroundings in the treatment chamber. As a treatment, not just The liquid chemical treatment at room temperature is also treated with a chemical solution accompanying heating. Further, when the substrate to be processed needs to be subjected to another process, the substrate is transferred to the next processing chamber for processing. The final substrate is washed and dried, and is stored in the original dedicated cassette by the transfer robot, and then taken out from the substrate processing apparatus.

The size of the width or height of the dedicated cartridge or the dedicated unit used in the substrate processing apparatus is constant, and the size of each processing chamber tends to be the same. Therefore, depending on the number of processing chambers, the arrangement configuration of each processing chamber and the transfer robot has a similar tendency. When there are two processing chambers, more is the form of connecting the direct processing chamber to the EFEM. In addition, when there are four processing chambers, a transfer robot (a buffer table) is provided in the EFEM, and a transfer robot that transports the substrate to the processing chamber is further provided, and a processing chamber is often disposed around the transfer robot. .

Further, when the processing chamber is further increased, the above-described one more transport robot is linearly moved by the linear movement mechanism, and the processing chamber is often disposed on both sides of the robot movement path on which the transport robot moves. However, with this configuration, the movement speed of the transport robot moving from a straight line is limited, or the number of processing chambers is only 8 (from the robot movement path) from the limit of the internal movement of the clean room in which the substrate processing apparatus is installed. There are four sides on each side. Further, in order to increase the processing chamber, it is possible to add a transport method in which the processing chambers are superimposed and the substrate is transported to each level. That is to say, the processing chamber is not configured in a planar configuration and may be in a stereo configuration.

When the treatment using the same treatment liquid is performed individually in the plurality of treatment chambers, Since the processing time of each processing chamber is the same, a system with high transfer efficiency is used. On the other hand, when the treatment using the different treatment liquids is sequentially performed in the plurality of processing chambers, it is necessary to transport the substrates between the processing chambers. At this time, if the processing time of each processing chamber is different, substrate transfer waiting occurs in a certain processing project. Usually, in order to avoid substrate transfer waiting, the program is adjusted so that all processing projects are completed at the same processing time. However, since it is necessary to transport the substrate between the processing chambers, the substrate processing efficiency is lowered due to the interruption of the substrate transfer processing. Here, if the plural processing can be carried out in one processing chamber by the above-described different processing liquid, the substrate transfer between the processing chambers is not required. Thereby, it is possible to avoid interruption of processing caused by substrate transfer.

However, even if the plural processing using the above-described dissimilar processing liquid is carried out in one processing chamber, it is necessary to separate the processing chambers because of the difference in processing environment due to the type of the processing liquid. For example, in a processing chamber in which an etching process is performed, a chemical liquid (for example, a phosphoric acid liquid) supplied to a substrate is heated by a heater unit located above the substrate, and the substrate is etched by a high-temperature chemical liquid. In the processing chamber, as a secondary process, the substrate is subjected to a rinsing treatment of adding a rinsing liquid (for example, APM: ammonia hydrogen peroxide water). At this time, after the chemical solution in the environment and the rinsing liquid are processed, particles are generated, and particles may adhere to the heater unit. Further, since particles are attached to the heater unit, particles may adhere to the substrate during the substrate processing, and a defective product may occur. Therefore, it is difficult to remove the particles, and the maintenance time of the heater unit (for example, the heater washing time) tends to be long. In order to avoid this, although the treatment chambers are separated, it is necessary to carry out between the treatment chambers. Since the substrate is transferred, the substrate processing efficiency is lowered.

The problem to be solved by the present invention is to provide a substrate processing apparatus and a substrate processing method which improve substrate processing efficiency.

The substrate processing apparatus according to the embodiment includes a retreat chamber, a pair of processing chambers in which the evacuation chamber is provided, a movement chamber in the evacuation chamber, and a pair of processing chambers, and supplies the processing liquid to the substrate in the processing chamber. Further, a heater that functions as a processing unit that heats the processing liquid on the substrate, and a heater moving mechanism that functions as a moving mechanism that moves the heater between the evacuation chamber and the pair of processing chambers.

In the substrate processing method of the embodiment, the processing unit including the evacuation chamber, the pair of processing chambers provided between the evacuation chambers, and the processing liquid supplied to the substrate in the processing chamber and heating the processing liquid on the substrate is used. The substrate processing apparatus processes the substrate in the processing chamber, wherein the substrate processing method moves the processing unit between the evacuation chamber and the pair of processing chambers.

According to the substrate processing apparatus or the substrate processing method of the embodiment, the substrate processing efficiency can be improved.

10‧‧‧Substrate processing unit

21‧‧‧Processing room

22‧‧‧Rotating Maintenance Agency

24‧‧‧1st nozzle

25‧‧‧1st nozzle moving mechanism

26‧‧‧2nd nozzle

27‧‧‧2nd nozzle moving mechanism

31‧‧‧Retreat

32‧‧‧heater

32a‧‧‧Nozzles

33‧‧‧heater moving mechanism

34‧‧‧Cleaning Department

W‧‧‧Substrate

Fig. 1 is a plan view showing a schematic configuration of a substrate processing apparatus according to a first embodiment.

Fig. 2 is a perspective view showing a schematic configuration of a substrate processing unit according to the first embodiment.

Fig. 3 is a cross-sectional view showing a schematic configuration of a heater, a heater moving mechanism, and a cleaning unit according to the first embodiment (a cross-sectional view taken along line 3-3 of Fig. 1).

Fig. 4 is a plan view showing a comparative example of the substrate processing apparatus according to the first embodiment.

Fig. 5 is a timing chart showing the flow of the substrate processing operation of the substrate processing apparatus and the comparative example of the first embodiment.

Fig. 6 is a cross-sectional view showing a schematic configuration of a heater, a heater moving mechanism, and a cleaning unit according to the second embodiment.

(First embodiment)

The first embodiment will be described with reference to Figs. 1 to 5 .

(basic composition)

As shown in FIG. 1 , the substrate processing apparatus 10 according to the first embodiment includes a plurality of opening and closing units 11 , a first transfer robot 12 , a buffer unit 13 , a second transfer robot 14 , a plurality of substrate processing units 15 , and a device attachment unit 16 .

Each of the opening and closing units 11 is arranged side by side in a row. The opening and closing unit 11 opens and closes a door of a dedicated box (for example, FOUP) that functions as a transport container. That is, when the dedicated box is FOUP, the opening and closing unit 11 is referred to as a FOUP opener.

The first transfer robot 12 is the first along the parallel opening and closing unit 11 The mode in which the transport direction is moved is provided next to the column of each of the opening and closing units 11. The first transfer robot 12 takes out the substrate W from a dedicated cassette in which the door is opened by the opening and closing unit 11. Then, the first transport robot 12 moves the substrate W to the vicinity of the buffer unit 13 in the first transport direction as necessary, rotates at the stop, and carries the substrate W into the buffer unit 13. Further, the first transfer robot 12 takes out the processed substrate W from the buffer unit 13, and if necessary, moves the substrate W to the vicinity of the desired opening and closing unit 11 in the first conveyance direction, and rotates at the stop and processes the processed substrate. W moves into the desired special box. In addition, the first transfer robot 12 may move the substrate W into the buffer unit 13 without moving or moving, or carry the processed substrate W into a desired dedicated cassette. As the first transport robot 12, for example, a robot having a robot arm, a robot, a moving mechanism, or the like can be used.

The buffer unit 13 is located in the vicinity of the center of the first robot moving path that the first transfer robot 12 moves, and is provided on the side of the first robot moving path, that is, the side opposite to each of the opening and closing units 11. The buffer unit 13 functions as a buffer table (substrate receiving stage) for holding the substrate W between the first transfer robot 12 and the second transfer robot 14 .

The second transfer robot 14 is provided to move from the vicinity of the buffer unit 13 to the second transport direction (an example of a direction intersecting the first transport direction) perpendicular to the first transport direction. The second transfer robot 14 takes out the substrate W from the buffer unit 13, and moves the substrate W to the vicinity of the desired substrate processing unit 15 in the second transport direction as necessary, and rotates at the stop to carry the substrate W into the desired substrate. Processing unit 15. this In addition, the second transfer robot 14 takes out the processed substrate W from the substrate processing unit 15, and if necessary, moves the substrate W to the vicinity of the buffer unit 13 in the second transport direction, rotates at the stop, and carries the processed substrate W into place. Buffer unit 13. In addition, the second transfer robot 14 may move the substrate W into the desired substrate processing unit 15 or carry the processed substrate W into the buffer unit 13 without moving or rotating. As the second transfer robot 14, for example, a robot having a robot arm, a robot, a moving mechanism, or the like can be used.

The substrate processing unit 15 is located on both sides of the second robot moving path that the second transfer robot 14 moves, and is provided, for example, two. The substrate processing unit 15 has a pair of rotation processing units 15a and 15b and a heat treatment unit 15c. The heat treatment unit 15c is provided between the pair of rotation processing units 15a and 15b, and the pair of rotation processing units 15a and 15b function as a common processing unit (details will be described later).

The device attachment unit 16 is provided at one end of the second robot movement path, that is, the end opposite to the buffer unit 13. The unit attaching unit 16 accommodates the liquid supply unit 16a and the control unit 16b. The liquid supply unit 16a supplies various treatment liquids (for example, a chemical liquid, a rinse liquid, a rinse liquid, etc.) or a washing liquid to the pair of rotation processing units 15a and 15b and the heat treatment unit 15c. The control unit 16b includes a microcomputer that centrally controls each unit, a substrate processing information for storing the substrate-related processing, and various memory programs (not shown). The control unit 16b controls each of the opening and closing unit 11, the first transfer robot 12, the second transfer robot 14, and the substrate processing unit 15 in accordance with the substrate processing information or various programs.

(substrate processing unit)

Next, the substrate processing unit 15, that is, the pair of rotation processing units 15a and 15b and the heat treatment unit 15c will be described with reference to FIGS. 2 and 3. In FIG. 2, the internal structure of the substrate processing unit 15 can be seen. Further, the rotation processing units 15a and 15b basically have the same configuration, and the rotation processing unit 15a is explained as a representative.

(rotation processing unit)

As shown in Fig. 2, the rotation processing unit 15a includes a processing chamber 21, a rotation maintaining mechanism 22, a cup 23, a first head 24, a first head moving mechanism 25, a second head 26, a second head moving mechanism 27, and process control. Department 28. The rotation maintaining mechanism 22, the cup 23, the first head 24, the first head moving mechanism 25, the second head 26, and the second head moving mechanism 27 are provided in the processing chamber 21.

The processing chamber 21 is formed, for example, in a rectangular parallelepiped shape, and has a substrate shutter 21a and a maintenance port 21b. The substrate shutter 21a is formed to be openable and closable on the wall surface of the processing chamber 21 on the second robot moving path side. The maintenance port 21b is formed in a wall surface on the side opposite to the substrate shutter 21a of the processing chamber 21 in an openable and closable manner. Further, in the processing chamber 21, the degree of cleanness is maintained by the downward flow (vertical laminar flow), and further, it is maintained at a lower pressure than the outside.

The rotation maintaining mechanism 22 causes the substrate W to be processed to face upward, and maintains the substrate W in a horizontal state, and an axis perpendicular to the center of the processed surface of the substrate W (intersecting the axis of the processed surface of the substrate W) One Example) As a center of rotation, the substrate W is rotated in a horizontal plane. For example, the rotation maintaining mechanism 22 maintains the substrate W in a horizontal state in the cup 23 by a plurality of supporting members (not shown), and maintains the rotation mechanism (not shown) having a rotary shaft or a motor. The substrate W in the state is rotated.

The cup 23 is formed in a cylindrical shape from the periphery thereof so as to surround the substrate W held by the rotation maintaining mechanism 22. The upper opening of the cup 23 exposes the substrate W on the rotation maintaining mechanism 22, and the peripheral wall of the upper portion is inclined toward the inner side in the radial direction. The cup 23 receives a treatment liquid scattered from the rotating substrate W or a treatment liquid (for example, a chemical solution, a rinse solution, a rinse solution, or the like) that flows down. Further, a discharge port (not shown) for discharging the received processing liquid is formed on the bottom surface of the cup 23. The treatment liquid discharged from the discharge port is recovered by a recovery unit (not shown).

The first head 24 supplies a processing liquid (for example, APM: ammonia hydrogen peroxide water) to the surface to be processed of the substrate W on the rotation maintaining mechanism 22. The first head 24 is formed along the surface to be processed of the substrate W on the rotation maintaining mechanism 22 by the first head moving mechanism 25 in a swinging manner. Further, in the first head 24, the rinsing liquid is supplied from the liquid supply unit 16a through a pipe (not shown).

The first head moving mechanism 25 is a mechanism that swings the first head 24 along the processed surface of the substrate W on the rotation maintaining mechanism 22. The first head moving mechanism 25 has a movable arm 25a and a rotating mechanism 25b. The movable arm 25a maintains the first head 24 at the tip end in a horizontal state. The rotation mechanism 25b is provided around the cup 23 and supports the end of the movable arm 25a. The distal end serves as a center of rotation to rotate the movable arm 25a. The center of rotation of the movable arm 25a, that is, the swing center of the first head 24 is in the processing chamber 21, and the holding rotation maintaining mechanism 22 is provided for the wall on the side of the adjacent retracting chamber 31 (heat processing unit 15c) of the processing chamber 21. On the opposite side of the wall side. More specifically, the swing center of the first head 24 is provided on the side opposite to the wall on the side of the heat treatment unit 15c adjacent to the processing chamber 21, and is close to the position of the maintenance weir 21b. As an example, the rotation mechanism 25b is configured by a rotary shaft, a motor, or the like. For example, the first head moving mechanism 25 moves the first head 24 to the liquid supply position in the vicinity of the center of the processed surface of the substrate W facing the rotation maintaining mechanism 22, and retreats from the liquid supply position, and can perform the substrate W. The moving in or out, and the retracted position of the substrate W heat treatment.

The second head 26 supplies a rinse liquid (for example, pure water) to the surface to be processed of the substrate W on the rotation maintaining mechanism 22. The second head 26 is formed along the surface to be processed of the substrate W on the rotation maintaining mechanism 22 by the second head moving mechanism 27 in a swinging manner. Further, in the second head 26, the rinse liquid is supplied from the liquid supply unit 16a through a pipe (not shown).

The second head moving mechanism 27 is a mechanism that swings the second head 26 along the processed surface of the substrate W on the rotation maintaining mechanism 22. Similarly to the first head moving mechanism 25, the second head moving mechanism 27 has a movable arm 27a and a rotating mechanism 27b. The movable arm 27a maintains the second head 26 at the tip end in a horizontal state. The rotation mechanism 27b is provided around the cup 23, supports the end of the movable arm 27a, and rotates the movable arm 27a as the rotation center. The rotation center of the movable arm 27a, that is, the swing center of the second head 26 is in the processing chamber 21, and the retreat chamber adjacent to the processing chamber 21 The wall on the side of 31 (heat treatment unit 15c) and the holding rotation maintaining mechanism 22 are provided on the wall side on the opposite side. More specifically, the swing center of the second head 26 is provided on the side opposite to the wall on the side of the heat treatment unit 15c adjacent to the processing chamber 21, and is close to the position of the substrate shutter 21a. The rotating mechanism 27b is configured by a rotary shaft, a motor, or the like as an example. For example, the second head moving mechanism 27 moves the second head 26 to a liquid supply position in the vicinity of the center of the surface to be processed of the substrate W facing the rotation maintaining mechanism 22, and retreats from the liquid supply position, and can perform the substrate W. The moving in or out, and the retracted position of the substrate W heater.

The processing control unit 28 is electrically connected to the rotation maintaining mechanism 22 or the first head 24, the first head moving mechanism 25, the second head 26, the second head moving mechanism 27, and the like. The processing control unit 28 controls the maintenance or rotation of the substrate W caused by the rotation maintaining mechanism 22, the liquid supply by the first head 24, and the movement of the first head in response to an instruction from the control unit 16b (under the control of the control unit 16b). The movement of the head caused by the mechanism 25, the supply of the liquid by the second head 26, and the movement of the head by the second head moving mechanism 27.

(heat treatment unit)

The heat treatment unit 15c includes a evacuation chamber 31, a heater 32, a heater moving mechanism 33, a washing unit 34, and a washing control unit 35. The heater 32, the heater moving mechanism 33, and the washing unit 34 are provided in the evacuation chamber 31.

The evacuation chamber 31 is formed, for example, in a rectangular parallelepiped shape, and has a plurality of heating shutters 31a and maintenance ports 31b. The evacuation chamber 31 will pass the adjacent processing chamber 21 The walls are separated. Each of the heating gates 31a is formed to open and close individually on the two wall surfaces facing each other in the evacuation chamber 31, that is, on the wall surfaces on the two processing chambers 21 side of the evacuation chamber 31. For example, the heating shutter 31a is opened and closed by sliding movement in the vertical direction. The maintenance port 31b is formed such that the wall surface on the side opposite to the second robot moving path in the evacuation chamber 31 is opened and closed. The clean room is maintained in the evacuation chamber 31 in a down flow.

The heater 32 heats the processing liquid (for example, a chemical liquid) on the substrate W held by the rotation maintaining mechanism 22. In the heater 32, the surface facing the surface to be processed of the substrate W has a shape similar to the shape of the surface to be processed in the substrate W, and the size of the opposite surface is preferably a total coverage of the surface to be processed. size. For example, when the substrate is a circular wafer, it is preferable to form a circular shape in which the opposing faces of the heater 32 and the substrate W are larger than the diameter of the circular wafer. Next, the opposing surface of the heater 32 and the substrate W is set to a horizontal plane. This heater 32 has a nozzle 32a. The nozzle 32a is formed at a central position on the lower surface of the heater 32, and supplies a processing liquid (for example, a chemical liquid) to the surface to be processed of the substrate W on the rotation maintaining mechanism 22.

The heater moving mechanism 33 supports the heater 32 and is a mechanism that moves the heater 32 in the swing direction F1, the vertical direction (elevation direction) F2, and the left-right direction (lateral direction) F3. This heater moving mechanism 33 has a heating arm 33a and an arm moving mechanism 33b. The heater moving mechanism 33 is a moving mechanism of the moving heater 32 in the range between the evacuation chamber 31 and the pair of processing chambers 21, that is, in the evacuation chamber 31 and the pair of processing chambers 21 (for example, Swing mechanism) role.

The heating arm 33a maintains the heater 32 on the lower side of the front end side. The heating The arm 33a is formed by the arm moving mechanism 33b in such a manner as to be movable in a horizontal state. Further, the heating arm 33a has a liquid supply flow path 33a1. One end of the liquid supply flow path 33a1 is connected to the nozzle 32a, and the other end thereof is connected to the liquid supply unit 16a via a pipe (not shown). In the nozzle 32a, for example, a high-temperature chemical liquid (for example, a phosphoric acid liquid) is supplied from the liquid supply unit 16a through the liquid supply flow path 33a1 and the pipe. Thereby, the high-temperature chemical liquid is discharged from the nozzle 32a and supplied to the surface to be processed of the substrate W. The high-temperature chemical liquid supplied to the surface to be processed of the substrate W is subjected to an etching process by heating of the heater 32 to maintain a high temperature. The heater 32 supplies a processing liquid to the substrate W in the processing chamber 21, and functions as a processing unit that heats the processing liquid on the substrate W.

The arm moving mechanism 33b supports the end of the heating arm 33a and is a mechanism that moves the heating arm 33a in the swinging direction F1, the vertical direction F2, and the left-right direction F3. The arm moving mechanism 33b is configured by a combination of a rotating mechanism, a vertical movement mechanism, a right and left movement mechanism, and the like as an example. For example, the arm moving mechanism 33b moves the heating arm 33a in the swinging direction F1 in a state where the heating shutter 31a is opened, and moves the heater 32 to the opposite direction of the substrate W on the rotation maintaining mechanism 22 with respect to the processed surface. The position (heat treatment position) is retracted from the heat treatment position to the retracted position in the evacuation chamber 31. Further, the heater 32 is swung by the heating arm 33a by the arm moving mechanism 33b, and the axis of the arm moving mechanism 33b is used as a rotating shaft, and is rotated around the rotating shaft.

Here, in the present embodiment, the heater 32 is maintained on the distal end side of the heating arm 33a, and the heater 32 is oscillated by the rotation of the heating arm 33a. In the state, as shown in FIG. 1 and FIG. 3, the distance between the nozzle 32a provided at the center of the heater 32 and the swing center of the heater 32 (the center of rotation of the heating arm 33a, that is, the center of the rotation axis of the arm moving mechanism 33) is R1, when the distance between the swing center of the heater 32 and the rotation center of the rotation maintaining mechanism 22 of each of the pair of rotation processing units 15a and 15b is r2 and r3, respectively, the arm movement mechanism is established on the premise that r1=r2=r3 33 is preferred.

The cleaning unit 34 is provided below the heater 32 that is present at the retracted position. The cleaning unit 34 discharges a cleaning liquid (for example, pure water) toward the lower side of the heater 32 that is present at the retracted position, and washes the treatment liquid such as the chemical liquid adhering to the lower surface of the heater 32 with the cleaning liquid. As shown in FIG. 3, the cleaning unit 34 has a liquid receiving portion 34a and a scattering portion 34b.

The liquid receiving portion 34a has a box shape in which the upper portion is opened. The opening of the liquid receiving portion 34a has a shape similar to the shape of the lower surface of the heater 32, that is, the surface to be washed, and the size of the surface to be washed is preferably covered. When the lower surface of the heater 32 is circular, the liquid receiving portion 34a has a circular shape in plan view, and its diameter is larger than the diameter of the heater 32. The liquid receiving portion 34a receives the washing liquid dropped from the heater 32 existing at the retracted position or the washing liquid scattered by the scattering. A liquid supply flow path 41 is formed at the bottom of the liquid receiving portion 34a. This liquid supply flow path 41 is connected to the liquid supply unit 16a via a pipe (not shown). Further, a liquid discharge port 42 is formed at a bottom corner of the liquid receiving portion 34a. The washing liquid discharged from the liquid discharge port is recovered by a recovery unit (not shown).

The scattering portion 34b is provided on the bottom surface of the liquid receiving portion 34a avoiding the liquid discharge port 42. A plurality of nozzles 43 are formed in the scattering portion 34b. These nozzles 43 are arranged side by side in a plane, and are connected to the liquid supply flow path 41. In addition, each nozzle 43 It can also be configured in a circular shape. In the nozzle 43, a cleaning liquid (for example, pure water) is supplied from the liquid supply unit 16a through the liquid supply flow path 41 and a pipe (not shown). The scattering portion 34b discharges the cleaning liquid supplied from the liquid supply unit 16a upward from each of the nozzles 43. Further, in the stage before the discharge of the cleaning liquid from the nozzle 43, the heater 32 is lowered by the heater moving mechanism 33, and is stopped at a predetermined value washing position of the distance (gap) of the opposing distributing portion 34b. Therefore, the cleaning efficiency can be improved as compared with the case where the gap is larger than the predetermined value.

Further, since the exhaust of the processing environment gas in the evacuation chamber 31 is performed after the heating and washing, another exhaust system (not shown) different from the exhaust system of the adjacent processing chamber 21 is connected to the evacuation chamber 31. By the exhaust system, after heating and washing, the gas in the processing environment in the evacuation chamber 31 generated by the heating and washing can be exhausted.

Returning to Fig. 2, the washing control unit 35 is electrically connected to the heater 32 or the heater moving mechanism 33, the washing portion 34, and the like. The washing control unit 35 controls the driving or heating temperature of the heater 32 and the heater movement caused by the heater moving mechanism 33 in response to an instruction from the control unit 16b (under the control of the control unit 16b), which is caused by the cleaning unit 34. Washed and so on.

(substrate processing operation)

Next, the substrate processing operation of the substrate processing apparatus 10 will be described. In the relationship described above, the processing chamber 21 of the rotation processing unit 15a is referred to as a first processing chamber 21, and the processing chamber 21 of the rotation processing unit 15b is referred to as a second processing chamber 21.

First, the substrate W is taken out from the dedicated cassette in the opening and closing unit 11 by the first transfer robot 12. At this time, the door of the dedicated box is opened. The first transport robot 12 moves along the first robot moving path as necessary, rotates at the stop, and carries the substrate W into the buffer unit 13. Alternatively, the first transfer robot 12 rotates without moving, and the substrate W is carried into the buffer unit 13. Thereafter, the substrate W in the buffer unit 13 is taken out by the second transfer robot 14. The second transfer robot 14 moves to the vicinity of the first processing chamber 21 of the desired rotation processing unit 15a along the second robot movement path as necessary, and rotates at the stop to carry the substrate W into the desired first processing chamber 21. In addition, the second transfer robot 14 moves without moving and rotates the substrate W into the desired first processing chamber 21. At this time, the substrate shutter 21a of the first processing chamber 21 is opened.

The substrate W carried into the first processing chamber 21 is maintained by the rotation maintaining mechanism 22. After that, the second transfer robot 14 is retracted from the first processing chamber 21, the substrate shutter 21a is closed, and the heating shutter 31a on the first processing chamber 21 side of the evacuation chamber 31 is opened. The heater 32 in the evacuation chamber 31 moves in the swing direction F1 by the heater moving mechanism 33, enters the first processing chamber 21 together with the heating arm 33a, and stops processing of the substrate W on the rotation maintaining mechanism 22. Face to face. Then, the heater 32 is lowered by the heater moving mechanism 33, and stops at a position where the distance between the surfaces of the substrate W on the rotation maintaining mechanism 22 is a predetermined value (for example, about 1 mm). In this state, the substrate W is rotated at a lower speed (for example, 500 rpm or less) than the rotation maintaining mechanism 22, and a high-temperature chemical liquid (for example, phosphoric acid liquid) ejected from the nozzle 32a of the heater 32 is set at a predetermined time. The surface of the substrate W is discharged and the etching process is performed. Further, the heater 32 is driven in advance before the processing, that is, in the pre-stage of the etching process, that is, from the time of being located in the evacuation chamber 31, the heating temperature is maintained at a predetermined temperature (for example, 100 degrees or more).

The high-temperature chemical liquid discharged from the nozzle 32a is supplied between the lower surface of the heater 32 and the surface to be processed of the substrate W, and is diffused toward the outer periphery of the substrate W by the centrifugal force of the rotation of the substrate W. Thereby, the chemical liquid is filled in between the lower surface of the heater 32 and the surface to be processed of the substrate W. At this time, the heater 32 comes into contact with the chemical liquid on the surface to be processed of the rotating substrate W, and directly heats the chemical liquid. Further, although the heater 32 directly heats the chemical liquid with the chemical liquid on the surface to be processed of the substrate W, it is not limited thereto, and is heated in a non-contact manner with the surface to be processed of the substrate W to indirectly heat the chemical liquid. However, if the chemical liquid on the surface to be processed of the substrate W can be heated, direct heating and indirect heating are not simultaneously performed, and heating may be performed by only one of them.

After the etching process is completed, the heater 32 is lifted by the heater moving mechanism 33, and is evacuated from the processed surface of the substrate W. Next, the heater 32 is moved in the swing direction F1 by the heater moving mechanism 33, returns to the evacuation chamber 31 together with the heating arm 33a, and faces the washing portion 34 to stop. After the heater 32 is stopped above the cleaning unit 34, the heating shutter 31a on the first processing chamber 21 side is closed. Further, the heater 32 is lowered by the heater moving mechanism 33, and is stopped at a position where the distance between the scattering portions 34b in the liquid receiving portion 34a is a predetermined value. In this state, the cleaning liquid is ejected upward from the dispersing portion 34b for a predetermined time, and the lower surface of the heater 32 is washed by the cleaning liquid. a washing liquid dropped from under the heater 32 or by a spray booth The diffused cleaning liquid is received by the liquid receiving portion 34a, discharged from the liquid discharge port 42, and recovered by the collecting portion. After the washing of the heater 32 is completed, the heater 32 is raised by the heater moving mechanism 33 and stops at the standby position. The heating temperature of the heater 32 is maintained at the aforementioned predetermined temperature. Therefore, since the washed heater 32 is immediately dried, the heater 32 can be quickly used in the next process.

Further, after the etching process is completed for one substrate W, it is not necessary to wash the lower surface of the heater 32. For example, until the predetermined number of substrates W are finished, the cleaning process is not performed, and the etching process is continuously performed, and the etching process may be performed on the substrate W having a predetermined number of times. The heater 32 is washed.

On the other hand, the second transfer robot 14 transports the unprocessed substrate W to the second processing chamber 21 of the rotation processing unit 15b until the heater 32 in the evacuation chamber 31 is washed. At the time of this conveyance, the substrate shutter 21a of the second processing chamber 21 is opened, and the substrate W is maintained by the rotation maintaining mechanism 22. The second transfer robot 14 is retracted from the second processing chamber 21 after the conveyance is completed, and the substrate shutter 21a is closed. After the cleaning of the heater 32 is completed, the heating shutter 31a on the second processing chamber 21 side of the evacuation chamber 31 is opened. The heater 32 in the evacuation chamber 31 moves in the swing direction F1 by the heater moving mechanism 33, enters the second processing chamber 21 together with the heating arm 33a, and stops processing of the substrate W on the rotation maintaining mechanism 22. Face to face. Then, the heater 32 is lowered by the heater moving mechanism 33, and is stopped at a position at which the distance of the processed surface of the substrate W on the rotation maintaining mechanism 22 is a predetermined value. In this state, the substrate W is rotated by a specific ratio The holding mechanism 22 is also rotated at a low speed (for example, 500 rpm or less), and a high-temperature chemical liquid (for example, phosphoric acid liquid) ejected from the nozzle 32a of the heater 32 is discharged to the surface to be processed of the substrate W for a predetermined time, and is etched. deal with. Further, the heating temperature of the heater 32 is maintained at the aforementioned predetermined temperature.

In the first processing chamber 21, after the etching process is completed, the first head 24 is moved to the liquid supply position above the substrate W by the first head moving mechanism 25 in accordance with the retraction of the heater 32, and the first head 24 is moved from the first head 24 The rinsing liquid (for example, APM) is discharged at a predetermined time (first rinsing treatment). At this time, the rotation of the substrate W is maintained. Further, in the first flushing process, the first head 24 may be swung by the first head moving mechanism 25.

In the first processing chamber 21, after the first rinsing process is completed, the first head 24 is retracted from above the substrate W by the first head moving mechanism 25, and the second head 26 is moved to the upper side of the substrate W by the second head moving mechanism 27. The liquid supply location. In this state, the rinsing liquid (for example, pure water) is discharged from the second head 26 for a predetermined time (second rinsing process). At this time, the rotation of the substrate W is maintained. Further, in the second flushing process, the second head 26 may be swung by the second head moving mechanism 27.

In the first processing chamber 21, after the second rinsing process is completed, the second head 26 is retracted from above the substrate W by the second head moving mechanism 27. Thereafter, the substrate W is rotated at a high speed by the rotation maintaining mechanism 22 for a predetermined period of time, and the rinsing liquid is scattered from the substrate W by the centrifugal force of the rotation, and the substrate W is dried. After the drying process of the substrate W is finished, the rotation of the substrate W is stopped. stop. The substrate shutter 21a of the first processing chamber 21 is opened, and the processed substrate W is taken out by the second transfer robot 14. The second transfer robot 14 moves along the second robot movement path as necessary, rotates at the stop, and carries the processed substrate W into the buffer unit 13. In addition, the second transfer robot 14 rotates without moving, and carries the processed substrate W into the buffer unit 13. Thereafter, the substrate W in the buffer unit 13 is taken out by the first transfer robot 12. The first transfer robot 12 moves along the first robot movement path as necessary, rotates at the stop, and carries the processed substrate W into a desired dedicated cassette. Alternatively, the first transfer robot 12 does not move and rotates, and the processed substrate W is carried into a desired dedicated cassette. At this time, the door of the dedicated box is opened.

In the same manner as in the second processing chamber 21, after the etching process (for example, phosphoric acid treatment) is completed, the first processing (for example, APM processing) is performed in the same manner as in the first processing chamber 21. After the completion of the first rinsing process, a second rinsing process (for example, pure water treatment) is performed in the same manner as in the first processing chamber 21. After the completion of the second rinsing process, the drying process and the substrate transfer process are performed in the same manner as in the first processing chamber 21. Further, in the above embodiment, the substrate W may be washed with a hydrofluoric acid solution before the substrate W using the phosphoric acid solution, or may be subjected to, for example, pure water treatment between the treatment with the phosphoric acid solution and the APM treatment. Washing treatment.

In the substrate processing operation, the heater 32 is alternately moved in the first processing chamber 21 and the second processing chamber 21, and the etching process (chemical liquid processing) by the heater 32 is performed in the first processing chamber 21 and the second processing chamber. 21 interactions. For example, in the first processing chamber 21, the heater 32 is used. At the time of the etching process, the first rinsing process by the first head 24, the second rinsing process by the second head 26, and the spin drying process of the substrate W are performed in the second processing chamber 21. On the other hand, in the first processing chamber 21, when the first rinsing process by the first head 24, the second rinsing process by the second head 26, and the spin drying process of the substrate W are performed, the second processing chamber 21 is utilized. The heater 32 performs an etching process.

Therefore, each of the processing chambers 21 can continuously perform the processing from the chemical liquid processing to the drying processing without moving the substrate W. Thereby, the substrate transfer between the two processing chambers is not required as compared with the case where the plural processing using the different processing liquids is sequentially performed in the two processing chambers, and the substrate transfer time can be omitted. Further, when different treatments are continuously performed in the two processing chambers, in order to prevent solution penetration (for example, watermarking), it is necessary to transport the substrate W in a wet state, and high-speed conveyance is impossible. Therefore, the number of times of transfer of the substrate W by the transfer robot is increased, and the substrate transfer time is also long because of the low speed transfer. In the substrate processing operation, the substrate transfer time can be omitted, and the substrate processing efficiency can be greatly improved. Further, the heater 32 also functions as a common processing unit in the pair of processing chambers 21. By arranging the heater 32 and the heater moving mechanism 33 in each of the processing chambers 21, the configuration of the apparatus can be simplified and the cost can be reduced.

(substrate processing engineering)

Next, the substrate processing work performed by the substrate processing apparatus 10 described above will be described. Further, at the substrate of the substrate processing apparatus 10 described above Before the process, the substrate processing apparatus 100 as a comparative example will be described with reference to FIG. 4, and then the substrate processing work of the substrate processing apparatus 100 and the substrate processing apparatus 10 of the comparative example will be described with reference to FIG.

(Basic composition of the comparative example)

As shown in FIG. 4, the substrate processing apparatus 100 of the comparative example has a complex phosphoric acid processing chamber 101 and a plurality of APM processing chambers 102 instead of the plurality of substrate processing units 15 of the substrate processing apparatus 10. Here, the difference from the substrate processing apparatus 10 (each phosphoric acid processing chamber 101 and each APM processing chamber 102) will be described, and the other description will be omitted.

Each of the phosphoric acid processing chambers 101 is a processing chamber using phosphoric acid, and is arranged in a line along the second robot moving path. The phosphoric acid processing chamber 101 has a substrate shutter 101a, a rotation maintaining mechanism 101b, a cup 101c, a heater 101d, a heating arm 101e, and an arm lifting mechanism 101f. Further, when the substrate is loaded or unloaded, the heater 101d is moved back to the retracted position above the rotation maintaining mechanism 101b by the arm elevating mechanism 101f together with the heating arm 101e.

Further, basically, the substrate shutter 101a is the same as the above-described substrate shutter 21a, and the rotation maintaining mechanism 101b is also the same as the above-described rotation maintaining mechanism 22, and the cup 101c is also the same as the above-described cup 23. Further, the heater 101d is also the same as the heater 32 described above, and the heating arm 101e is also the same as the aforementioned heating arm 33a.

Each APM processing chamber 102 is a processing chamber using APM, and the second robot moving path is sandwiched by the respective phosphoric acid processing chambers 101 arranged in a line. In the meantime, they are arranged in a row along the second robot moving path. The APM processing chamber 102 includes a substrate shutter 102a, a rotation maintaining mechanism 102b, a cup 102c, a first head 102d, a first head moving mechanism 102e, a second head 102f, and a second head moving mechanism 102g.

Further, basically, the substrate shutter 102a is the same as the above-described substrate shutter 21a, and the rotation maintaining mechanism 102b is also the same as the above-described rotation maintaining mechanism 22, and the cup 102c is also the same as the aforementioned cup 23. Further, the first head 102d is also the same as the first head 24, and the first head moving mechanism 102e is also the same as the first head moving mechanism 25, and the second head 102f is also the same as the second head 26, and the second head moving mechanism is the same. 102g is also the same as the second head moving mechanism 27.

Here, the phosphoric acid processing chamber 101 and the APM processing chamber 102 having the heater 101d are separated by the type of the treatment liquid, and the two processing chambers which are subjected to the different treatment are continuously performed. In order to improve the substrate transport efficiency, the phosphoric acid processing chamber 101 is transported to the substrate of the APM processing chamber 102, and the second transport robot 14 is not moved in the horizontal direction, and only the second transport robot 14 is rotated. Therefore, substrate transfer is performed between the phosphoric acid processing chamber 101 and the APM processing chamber 102 that face each other with the second robot moving path interposed therebetween. The unprocessed substrate W in the buffer unit 13 is transported by the second transfer robot 14 in the order of the buffer unit 13 → the phosphoric acid processing chamber 101 → the APM processing chamber 102 → the buffer unit 13 . At this time, since the substrate transfer between the phosphoric acid processing chamber 101 and the APM processing chamber 102 is required, the substrate transfer causes the processing to be interrupted, and the substrate processing efficiency is lowered.

(Comparison of substrate processing engineering)

In FIG. 5, the elapsed time is the horizontal axis, and the upper drawing in FIG. 5 shows the substrate processing work (processing sequence and processing time) of the substrate processing apparatus 100 of the comparative example, and the lower drawing in FIG. 5 shows the above substrate processing apparatus. 10 substrate processing engineering (processing sequence and processing time). Further, by comparing the upper diagram and the lower diagram in FIG. 5, the processing capabilities of both the substrate processing apparatus 100 of the comparative example and the substrate processing apparatus 10 can be compared. For convenience of explanation, the processing chamber 21 of the substrate processing apparatus 10 described above is referred to as a phosphoric acid + APM processing chamber 21.

As shown in FIG. 5, in the comparative example, the phosphoric acid processing chamber 101 repeatedly performs a series of processing operations of the pretreatment engineering A1, the phosphoric acid supply engineering A2, the substrate, the heating and cleaning engineering A3, and the substrate exchange engineering A4. Further, after the substrate exchange, the APM processing chamber 102 repeats a series of processing operations of the rinse liquid supply engineering B1, the APM supply engineering B2, the rinse liquid supply engineering B3, the spin drying engineering B4, and the substrate exchange engineering B5. Here, the treatment process of the pretreatment engineering A1, the phosphoric acid supply engineering A2, the substrate, and the heating and cleaning engineering A3 is phosphoric acid treatment. Further, the processing work of the flushing liquid supply engineering B1, the APM supply engineering B2, the flushing liquid supply engineering B3, and the rotary drying engineering B4 is APM processing. In this comparative example, the substrate W (for example, a semiconductor wafer) is transferred from the phosphoric acid processing chamber 101 to the APM processing chamber 102, and the two processes of phosphoric acid treatment and APM processing are continuously performed in different processing chambers.

In the phosphoric acid processing chamber 101, the heater 101d is driven in advance before the treatment, that is, heating is performed from the previous stage of the etching treatment. In the state, the heating temperature becomes a predetermined temperature. First, in the pretreatment project A1, a hydrofluoric acid solution is supplied from a nozzle or a treatment liquid nozzle of a heater 101d (not shown) to a surface to be treated of the substrate W, and the substrate W is washed with a hydrofluoric acid solution. Further, in the phosphoric acid supply project A2, the high-temperature phosphoric acid is supplied from the nozzle of the heater 101d to the surface to be processed of the substrate W, and the substrate W is treated with a high-temperature phosphoric acid solution. In the substrate and the heating and cleaning process A3, after the phosphoric acid treatment is completed, the heater 101d used for the treatment is washed together with the substrate W, and the next substrate W is carried in. In the cleaning, a rinse liquid (for example, pure water) is supplied from the nozzle of the heater 101d to the space between the heater 101d and the substrate W instead of the phosphoric acid solution, and the heater 101d and the substrate W are washed. In the substrate exchange work A4, the substrate W subjected to the treatment with the phosphoric acid solution is exchanged with the substrate W which has not been subjected to the phosphoric acid treatment, and the processed substrate W is transferred to the APM processing chamber 102 of the next project. At the time of this conveyance, the substrate W is conveyed in a wet state. In other words, in the state in which the substrate W is placed in the state of the rinsing liquid, the surface to be treated is kept wet during transportation.

In the APM processing chamber 102, a rinse liquid (for example, pure water) is supplied from the second head 102f to the surface to be processed of the substrate W before the rinse liquid supply process B1 and the APM supply process B2. Here, in the middle of transporting the substrate W from the phosphoric acid processing chamber 101 to the APM processing chamber 102, particles adhering to the rinse liquid on the substrate W or particles adhering to the substrate W are removed before the APM treatment. In the APM supply project B2, the APM is supplied from the first head 102d to the processed surface of the substrate W, and the substrate W is processed by the APM. In the rinse liquid supply project B3, from the second nozzle 102f supplies a rinse liquid (for example, pure water) to the surface to be treated of the APM-treated substrate W, and the APM-processed substrate W is washed by the rinse liquid. In the spin drying process B4, the washed substrate W is dried by spin drying. In the substrate exchange project B5, the dried substrate W is exchanged with the APM unprocessed substrate W, and is transported to the buffer unit 13.

On the other hand, in the phosphoric acid + APM processing chamber 21, pretreatment engineering A1, phosphoric acid supply engineering A2, substrate cleaning engineering C1, APM supply engineering B2, rinsing liquid supply engineering B3, spin drying engineering B4, substrate exchange engineering B5. The heating and washing process C2 is performed in the evacuation chamber 31. Further, the pretreatment project A1, the phosphoric acid supply project A2, the APM supply project B2, the rinse liquid supply project B3, and the substrate exchange project B5 are the same processes as the comparative example.

In the phosphoric acid + APM processing chamber 21, after the pretreatment process A1 and the phosphoric acid supply process A2 are completed, the rinse liquid (for example, pure water) is supplied from the second head 26 to the processed surface of the substrate W in the substrate cleaning process C1. Then, the surface to be processed of the substrate W is washed. After the completion of the substrate cleaning process C1, in the APM supply process B2, the APM is supplied from the first head 24 to the surface to be processed of the substrate W, and the substrate W is processed by the APM. In the rinse liquid supply project B3, the rinse liquid (for example, pure water) is supplied from the second head 26 to the surface to be processed of the APM-treated substrate W, and the APM-processed substrate W is washed by the rinse liquid. Thereafter, spin drying engineering B4 and substrate exchange engineering B5 are performed.

In the evacuation chamber 31, after the phosphoric acid supply project A2 is completed, the cleaning process C2 is heated, and the heater 32 is washed by the cleaning unit 34. The heating The device 32 moves between the two processing chambers 21 of the nip retracting chamber 31, but in the heat treatment of the phosphoric acid supply project A2 in either of the two processing chambers 21, during the period in which the heater 32 is not used, the retraction is performed. The evacuation position (intermediate position) in the chamber 31 is washed by the washing unit 34. In this example, it is considered that the APM process is performed in the two processing chambers 21.

In the aforementioned substrate processing apparatus 10, the two processes of the phosphoric acid treatment and the APM treatment can be carried out in the same phosphoric acid + APM processing chamber 21. In other words, two processes (phosphoric acid treatment and APM treatment) which are the reasons for separating the two processing chambers (phosphoric acid processing chamber 101 and APM processing chamber 102) in the comparative example can be continuously performed in the phosphoric acid + APM processing chamber 21. . Thereby, the substrate transfer between the two processing chambers is not required, the substrate transfer time is omitted, and the substrate processing efficiency can be improved.

Further, when the substrate W is transferred between the two processing chambers in the comparative example, when the surface to be processed is exposed during the conveyance of the substrate W, the exposed portion is defective due to the adhesion of the particles. Therefore, the surface to be processed of the substrate W is conveyed in a state in which the cleaning liquid is held. However, the cleaning liquid contained in the substrate W may ooze out from the surface to be processed of the substrate W due to vibration of the transfer robot or the like, and may not be maintained. The state of the liquid. However, according to the present embodiment, it is not necessary to transport between the processing chambers, and since it is not necessary to contain a liquid, it is possible to prevent product defects from being caused during the processing of the substrate (during transportation).

In the comparative example, after the substrate and the heating and cleaning process A3 are completed, the substrate exchange process A4 and the rinse liquid supply process B1 are performed, and the APM supply process B2 is started. On the other hand, in the phosphoric acid + APM processing chamber 21, after the substrate cleaning process C1 is completed, the APM supply can be started immediately. For the project B2, the processing time can be significantly shortened compared with the comparative example. Further, in the substrate processing apparatus 100 of the comparative example, although there are four phosphoric acid processing chambers 101 and APM processing chambers 102, the substrate processing apparatus 10 has eight phosphoric acid + APM processing chambers 21. Since the processing chamber 21 that performs a series of processes can be added, the substrate processing efficiency can be greatly improved.

Further, the heater 32 is washed by the washing unit 34 in the evacuation chamber 31. At this time, since the heater 32 is not present in the phosphoric acid + APM processing chamber 21, in the phosphoric acid + APM processing chamber 21, only the substrate W can be washed in the substrate cleaning process C1, and the substrate of the comparative example can be omitted. Heat wash cleaning process A3 heating wash time. Therefore, compared with the comparative example, the processing time in the phosphoric acid + APM processing chamber 21 can be shortened, and the substrate processing efficiency can be further improved. Further, in the process of the phosphoric acid + APM processing chamber 21 (processing in parallel), the heater 32 can be cleaned by the cleaning portion 34.

Further, by retracting the heater 32 and the nozzle 32a into the evacuation chamber 31 outside the phosphoric acid + APM processing chamber 21, the downward flow of the phosphoric acid + APM processing chamber 21 before the APM treatment can be excluded from the phosphoric acid + APM processing chamber. Phosphoric acid gas within 21. Thereby, it is possible to prevent the phosphoric acid from being mixed with the APM in the phosphoric acid + APM processing chamber 21 when the APM is performed, and it is possible to suppress the generation of particles in which the phosphoric acid and the APM react are generated in the phosphoric acid + APM processing chamber 21.

Further, in FIG. 5, as an example, the phosphoric acid treatment time is the same as the APM treatment time, but it is not limited thereto, and there may be some difference. However, in the comparative example, the phosphoric acid treatment time in the phosphoric acid processing chamber 101 is When the APM processing time of the APM processing chamber 102 is different, the waiting time of substrate transfer occurs due to the difference in processing time, and the substrate processing efficiency is lowered.

As described above, according to the first embodiment, the heater 32 is disposed between the pair of processing chambers 21 and the evacuation chamber 31 in a movable manner, and the heater moving mechanism 33 is in the pair of processing chambers 21 The inside and the retreat chamber 31 move between. For example, when two different processes (for example, phosphoric acid treatment and APM treatment) are performed in one processing chamber 21, the heater 32 is present in the processing chamber 21 in the first processing (for example, phosphoric acid treatment), and then in the second processing. The heater 32 is retracted from the processing chamber 21 (for example, in the APM process). Thereby, even if particles are generated in the processing chamber 21 due to the first processing and the second processing, the heater 32 is present in the evacuation chamber 31 in the second processing. Therefore, it is possible to suppress the particles 32 generated in the processing chamber 21 from adhering to the heater 32 in the evacuation chamber 31, and it is possible to carry out the two processes using the dissimilar processing liquid in one processing chamber 21. Thereby, the substrate transfer between the processing chambers can be saved, and the substrate processing efficiency can be improved.

Further, since the heater 32 functions as a common processing unit in the pair of processing chambers 21, the device configuration can be simplified and compared with the case where the heater 32 and the heater moving mechanism 33 are provided in the respective processing chambers 21, respectively. Cost reduction. In addition, when the adhesion of the particles in the heater 32 is suppressed and the substrate W is processed by the heater 32, particles adhering to the heater 32 can be prevented from adhering to the substrate W, and product defects can be prevented from occurring in the substrate W.

(Second embodiment)

The second embodiment will be described with reference to Fig. 6 . In the second embodiment, only differences (washing portions) from the first embodiment will be described, and other descriptions will be omitted.

As shown in Fig. 6, the cleaning unit 34 according to the second embodiment includes a brush 34c and a brush rotating mechanism 34d in addition to the liquid receiving portion 34a and the scattering portion 34b.

The brush 34c is, for example, a roller brush, and is disposed in a horizontal state along the radial direction in the liquid receiving portion 34a. The brush 34c is attached to the brush rotating mechanism 34d in a rotatable manner with the axis of the extending direction as the rotating shaft. The length of the brush 34c is longer than the radius of the lower surface of the heater 32 existing at the retracted position.

The brush rotating mechanism 34d has a rotating portion 51 and a rotating mechanism 52. The rotating portion 51 supports one end of the brush 34c, and the brush 34c is rotated along its axis by a driving source (not shown) such as a motor. The rotating mechanism 52 supports the rotating portion 51 to rotate the rotating portion 51 in the horizontal plane. The rotating mechanism 52 penetrates the bottom of the liquid receiving portion 34a and is provided at a slightly center of the bottom portion. The rotating mechanism 52 is configured by, for example, a rotary shaft or a motor. The rotating portion 51 is rotated in the horizontal plane by the rotating mechanism 52, and the brush 34c supported by the rotating portion 51 also rotates in the horizontal plane.

Each of the nozzles 43 is disposed on the bottom surface of the liquid receiving portion 34a away from the brush rotating mechanism 34d. These nozzles 43 are formed so as to discharge the cleaning liquid toward the vicinity of the center of the lower surface of the heater 32 existing at the retracted position. For example, the nozzle 43 is formed in a cylindrical shape, and the nozzle 43 is heated toward the retracted position. The central region below the device 32 is formed in an inclined manner.

In the cleaning unit 34, the heater 32 is lowered by the heater moving mechanism 33, and stops at the position of the brush 34c that contacts the liquid receiving portion 34a. In this state, the cleaning liquid is ejected upward from the dispersing portion 34b, and the brush 34c, which is in a wet state by the cleaning liquid, starts to rotate about its axis. When the cleaning of the cleaning liquid is continued, the rotating portion 51 starts to rotate by the rotating mechanism 52, and the brush 34c in the wet state by the cleaning liquid rotates around the shaft, and the heater 32 is rotated by the rotating portion 51. The lower surface is relatively moved in the circumferential direction, and the lower surface of the heater 32 is rubbed and washed. In this manner, the entire lower surface of the heater 32 is washed by the brush 34c and the cleaning liquid. The cleaning liquid dropped from the lower side of the heater 32 or the cleaning liquid diffused by the brush is received by the liquid receiving portion 34a, discharged from the liquid discharge port 42, and recovered by the collecting portion.

As described above, according to the second embodiment, the same effects as those of the first embodiment can be obtained. Then, the brush 34c of the cleaning unit 34 directly contacts the heater 32 in a wet state by the cleaning liquid, and the heater 32 is rubbed and washed. Thereby, since the heater washing ability of the washing portion 34 is increased, the heater washing time can be shortened, and the substrate processing efficiency can be further improved.

(Other embodiments)

In the above-described embodiments, the heater 32 is exemplified as the processing unit. However, the heater 32 is not limited thereto. For example, a heater such as a lamp tube or an IH (induction heating) heater may be used. Further, the shape of the lamp can also be various shapes such as a straight tube shape or a circular shape or a spherical shape. In addition, the lamp or the IH heater uses electromagnetic waves (light is also electromagnetic waves) to heat the substrate W or A heater for a liquid (for example, a liquid).

In addition, in the above-described respective embodiments, the cleaning function of the cleaning method of the cleaning heater surface is exemplified by the cleaning unit 34 of the cleaning method of Fig. 3 or Fig. 6, but the cleaning liquid is not limited thereto. For example, high-temperature pure water is accumulated in the liquid receiving portion 34a, and the method of immersing the heater surface in the cleaning liquid is also effective. Further, the heater 32, the heater moving mechanism 33, and the respective portions of the cleaning unit 34 may be integrated, and an extraction mechanism that can be taken out from the evacuation chamber 31 to the side opposite to the second robot movement path may be added. In this case, each of the above-described portions is taken out from the evacuation chamber 31 by the take-up mechanism, and since the circumferential surface of the heater 32 is exposed, the maintenance work of the heater 32 can be easily performed.

Further, in the above embodiments, the length of the heating arm 33a is constant, but not limited thereto. For example, a mechanism for changing the length of the heating arm 33a (for example, a telescopic mechanism that expands and contracts the heating arm 33a) may be provided. By changing the length of the heating arm 33a, even if three or four processing chambers 21 are added, the processing chambers 21 can be made to correspond to one heater 32.

Further, in each of the above-described embodiments, an example of the processing project has been described, but the present invention is not limited thereto, and the substrate processing apparatus 10 according to each of the above embodiments may be applied to various processing projects. In one processing chamber 21, substrate processing efficiency can be improved with respect to continuous processing in which it is necessary to switch the processing environment or temperature.

The embodiments of the present invention have been described above, but the embodiments are merely illustrative and are not intended to limit the scope of the invention. The novel embodiments can be implemented in various other forms, and various omissions, substitutions and changes can be made without departing from the scope of the invention. more. The scope of the invention and the modifications thereof are included in the scope and gist of the invention, and also include the equivalent scope of the invention described in the claims.

15‧‧‧Multiple substrate processing unit

15a, 15b‧‧‧ Rotary processing unit

15c‧‧‧heat treatment unit

21‧‧‧Processing room

21a‧‧‧Substrate gate

21b‧‧‧Maintenance

22‧‧‧Rotating Maintenance Agency

23‧‧‧ cups

24‧‧‧1st nozzle

25‧‧‧1st nozzle moving mechanism

25a‧‧‧ movable arm

25b‧‧‧Rotating mechanism

26‧‧‧2nd nozzle

27‧‧‧2nd nozzle moving mechanism

27a‧‧‧ movable arm

27b‧‧‧Rotating mechanism

28‧‧‧Process Control Department

31‧‧‧Retreat

31a‧‧‧heating gate

31b‧‧‧Maintenance

32‧‧‧heater

32a‧‧‧Nozzles

33‧‧‧heater moving mechanism

33a‧‧‧heater arm

33a1‧‧‧Liquid supply flow path

33b‧‧‧arm moving mechanism

34‧‧‧Cleaning Department

35‧‧‧Clean Control Department

F1‧‧‧ swing direction

F2‧‧‧Up and down direction

F3‧‧‧ direction

W‧‧‧Substrate

Claims (12)

A substrate processing apparatus including: a retreat chamber, a pair of processing chambers in which the evacuation chambers are provided, and movement between the retreat chamber and the pair of processing chambers, and supplying the processing liquid to the foregoing a processing unit that heats the processing liquid on the substrate in the processing chamber, and a moving mechanism that moves the processing unit between the evacuation chamber and the pair of processing chambers. The substrate processing apparatus according to claim 1, wherein the moving mechanism is a swinging mechanism that swings the processing unit between the evacuation chamber and the pair of processing chambers. The substrate processing apparatus according to claim 1, wherein the moving mechanism moves the processing unit alternately in the pair of processing chambers. The substrate processing apparatus according to claim 1, further comprising: a cleaning unit that is provided in the evacuation chamber and that cleans the processing unit. The substrate processing apparatus according to any one of claims 1 to 4, wherein the processing unit is a heater that contacts the processing liquid on the substrate and heats the processing liquid on the substrate; and the heater has the substrate A nozzle for supplying the aforementioned treatment liquid. The substrate processing apparatus according to claim 5, wherein a surface of the heater facing the processed surface of the substrate is similar in shape to the surface to be processed of the substrate, and has a full coverage The size of the surface to be treated; the nozzle is provided at the center of the opposing surface. The substrate processing apparatus according to claim 2, wherein the processing unit is a heater that contacts the processing liquid on the substrate and heats the processing liquid on the substrate; and the heater has a nozzle that supplies the processing liquid to the substrate. The pair of processing chambers are respectively provided with a rotation maintaining mechanism for maintaining and rotating the substrate; and the distance between the nozzle and the swing center of the heater is r1, and the swing center of the heater and the pair of processing chambers are When the distances of the rotation centers of the rotation maintaining mechanisms provided respectively are r2 and r3, respectively, r1=r2=r3 is satisfied. The substrate processing apparatus according to claim 2, wherein the processing chamber is provided with a rotation maintaining mechanism that maintains the substrate and rotates, and a nozzle that supplies the processing liquid to the substrate held by the rotation maintaining mechanism, and a head moving mechanism that oscillates along a surface to be processed of the substrate; the swing center of the head in the processing chamber is opposite to the wall on the side of the evacuation chamber adjacent to the processing chamber, and the rotation maintaining mechanism is sandwiched Side wall side. A substrate processing method using a pair of processing chambers provided with a retreating chamber and a retreating chamber therebetween, and a substrate for supplying a processing liquid to the processing chamber, and heating the processing liquid on the substrate The substrate processing apparatus of the processing unit processes the substrate in the processing chamber; wherein the substrate processing method moves the processing unit between the evacuation chamber and the pair of processing chambers. The substrate processing method according to claim 9, wherein the processing unit is swung between the evacuation chamber and the pair of processing chambers. The substrate processing method according to claim 9, wherein the processing unit is moved in a moving manner in the pair of processing chambers. The substrate processing method according to any one of claims 1 to 11, wherein the processing unit is moved in the evacuation chamber, and the processing unit is washed in the evacuation chamber.