TW201734653A - Detection device, exposure device, and method of manufacturing devices - Google Patents
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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Abstract
Description
本發明關於檢測裝置、曝光裝置以及製造裝置的方法。 The present invention relates to a detecting device, an exposure device, and a method of manufacturing the device.
在作為用於半導體裝置等的製造方法之一的光刻製程中,使用曝光設備,曝光設備經由投影光學系統將原版(original)的圖案轉印到基板上的曝光區域上。為了正確地轉印圖案,必須正確地檢測基板的表面(曝光區域)在投影光學系統的光軸方向上的高度。因此,曝光設備包括檢測基板的表面的高度的檢測系統(檢測裝置)。 In a photolithography process which is one of manufacturing methods for a semiconductor device or the like, an exposure device is used, and an exposure device transfers an original pattern onto an exposed region on a substrate via a projection optical system. In order to correctly transfer the pattern, it is necessary to correctly detect the height of the surface (exposure area) of the substrate in the optical axis direction of the projection optical system. Therefore, the exposure apparatus includes a detection system (detection means) that detects the height of the surface of the substrate.
檢測系統包括投影系統及光接收系統,投影系統將檢測光投影到基板的表面上,光接收系統接收來自基板的反射光。如果透射檢測光的透明基板(例如,玻璃)被使用來作為基板,則來自基板的表面的反射光與來自基板的後表面的反射光相互重疊,並因此可能會使檢測精度劣化。這種不便隨著近年來對更輕更薄的基板的需求 而變得明顯。日本專利公開第2004-273828號揭露了一種方法,其從以上兩種反射光中確定來自表面的反射光。日本專利公開第2010-271603號揭露了一種設備,其將具有與基板相同的折射率的流體設置於基板的正下方,以使光接收系統不會接收來自後表面的反射光。 The detection system includes a projection system that projects the detection light onto a surface of the substrate, and a light receiving system that receives the reflected light from the substrate. If a transparent substrate (for example, glass) that transmits the detection light is used as the substrate, the reflected light from the surface of the substrate and the reflected light from the rear surface of the substrate overlap each other, and thus the detection accuracy may be deteriorated. This inconvenience has accompanied the demand for lighter and thinner substrates in recent years. And it became obvious. Japanese Patent Publication No. 2004-273828 discloses a method of determining reflected light from a surface from the above two kinds of reflected light. Japanese Patent Publication No. 2010-271603 discloses an apparatus in which a fluid having the same refractive index as a substrate is disposed directly under the substrate so that the light receiving system does not receive reflected light from the rear surface.
然而,依據於透明基板的厚度,日本專利公開第2004-273828號中所揭露的方法以及日本專利公開第2010-271603號中所揭露的設備可能難以區分這兩種反射光。 However, depending on the thickness of the transparent substrate, the method disclosed in Japanese Patent Laid-Open No. 2004-273828 and the apparatus disclosed in Japanese Patent Laid-Open No. 2010-271603 may be difficult to distinguish between the two kinds of reflected light.
本發明係用於,例如,提供一種檢測方法,其在基板的表面的高度之檢測上為有利的。 The present invention is used, for example, to provide a detection method that is advantageous in detecting the height of the surface of the substrate.
本發明為一種檢測裝置,其具有投影系統以及光接收系統,投影系統從相對於待檢測物體的待檢測表面的法線之傾斜方向投影檢測光,光接收系統接收由待檢測物體所反射的反射光,檢測裝置基於由光接收系統所獲得的數據來檢測待檢測表面的位置,反射光包括在待檢測表面上所反射的表面反射光、以及透射通過待檢測表面並在待檢測物體的後表面上反射的後表面反射光,光接收系統包括偏振光分離單元以及檢測單元,偏振光分離單元將反射光分離成第一偏振光分量和第二偏振光分量,檢測單元檢測第一偏振光分量和第二偏振光分量,投影系統或光接收系統被配置成使得由檢測單元所獲得的後表面反射光 的第一偏振光分量與後表面反射光的第二偏振光分量相等,且投影系統或光接收系統包括計算單元,計算單元基於由檢測單元所獲得的顯示第一偏振光分量的數據與顯示第二偏振光分量的數據之間的差分數據來計算位置。 The present invention is a detecting device having a projection system that projects a detection light from an oblique direction with respect to a normal to a surface to be detected of an object to be detected, and a light receiving system that receives the reflection reflected by the object to be detected The light detecting means detects the position of the surface to be inspected based on the data obtained by the light receiving system, the reflected light including the surface reflected light reflected on the surface to be inspected, and transmitted through the surface to be inspected and on the rear surface of the object to be inspected The upper reflective surface reflects light, the light receiving system includes a polarized light separating unit and a detecting unit, the polarized light separating unit separates the reflected light into a first polarized light component and a second polarized light component, and the detecting unit detects the first polarized light component and a second polarized light component, the projection system or the light receiving system is configured such that the rear surface reflected light obtained by the detecting unit The first polarized light component is equal to the second polarized light component of the rear surface reflected light, and the projection system or the light receiving system includes a calculation unit that calculates the data and display based on the first polarized light component obtained by the detecting unit The difference data between the data of the two polarized light components is used to calculate the position.
從例示性實施例參照所附圖式的以下描述,本發明的進一步特徵將變得清楚明瞭。 Further features of the present invention will become apparent from the following description of exemplary embodiments.
1‧‧‧原版 1‧‧‧ original
2‧‧‧曝光設備主體 2‧‧‧Exposure device body
3‧‧‧照明光學系統 3‧‧‧Lighting optical system
4‧‧‧投影光學系統 4‧‧‧Projection optical system
5‧‧‧基板 5‧‧‧Substrate
6‧‧‧基板保持單元 6‧‧‧Substrate holding unit
7‧‧‧基板台 7‧‧‧ substrate table
8‧‧‧鏡 8‧‧ ‧ mirror
9‧‧‧雷射干涉儀 9‧‧‧Laser Interferometer
10‧‧‧光源 10‧‧‧Light source
11‧‧‧測量狹縫 11‧‧‧Measurement slit
12‧‧‧偏振光調整單元 12‧‧‧Polarization unit
13‧‧‧光投影透鏡 13‧‧‧Light projection lens
14‧‧‧光接收透鏡 14‧‧‧Light receiving lens
15‧‧‧偏振光束分離器 15‧‧‧Polarized beam splitter
16‧‧‧位置感測器 16‧‧‧ position sensor
17‧‧‧位置感測器 17‧‧‧ position sensor
18‧‧‧計算單元 18‧‧‧Computation unit
19‧‧‧檢測光 19‧‧‧Detecting light
20‧‧‧接收光(前表面反射光) 20‧‧‧ Receiving light (front surface reflected light)
21‧‧‧接收光(後表面反射光) 21‧‧‧ Receiving light (back surface reflected light)
22‧‧‧投影系統 22‧‧‧Projection system
23‧‧‧光接收系統 23‧‧‧Light receiving system
θ‧‧‧入射角 Θ‧‧‧incident angle
As‧‧‧點 As‧‧‧
Ap‧‧‧點 Ap‧‧‧ points
Bs‧‧‧點 Bs‧‧ points
Bp‧‧‧點 Bp‧‧ points
d‧‧‧距離 D‧‧‧distance
圖1是顯示包括根據第一實施例的檢測裝置的曝光設備的配置的示意圖。 FIG. 1 is a schematic view showing a configuration of an exposure apparatus including the detecting device according to the first embodiment.
圖2是顯示在基板的表面上所反射的光的路徑以及在基板的後表面上所反射的光的路徑的示意圖。 2 is a schematic view showing a path of light reflected on a surface of a substrate and a path of light reflected on a rear surface of the substrate.
圖3是解釋位置感測器不受到後表面反射光影響的情況的示意圖。 Fig. 3 is a schematic view for explaining a case where the position sensor is not affected by the reflected light of the rear surface.
圖4顯示在圖3的情況下藉由位置感測器所輸出的光強度分佈。 Figure 4 shows the light intensity distribution output by the position sensor in the case of Figure 3.
圖5是解釋位置感測器受到後表面反射光影響的情況的示意圖。 Fig. 5 is a schematic view for explaining a case where the position sensor is affected by the reflected light of the rear surface.
圖6顯示在圖5的情況下藉由位置感測器所輸出的光強度分佈。 Fig. 6 shows the light intensity distribution output by the position sensor in the case of Fig. 5.
圖7顯示對於基板的檢測光的入射角與p偏振光的反射率以及s偏振光的反射率之間的關係。 Fig. 7 shows the relationship between the incident angle of the detection light for the substrate and the reflectance of the p-polarized light and the reflectance of the s-polarized light.
圖8顯示當入射角為78度時藉由位置感測器所輸出的s偏振光的光強度分佈。 Figure 8 shows the light intensity distribution of s-polarized light output by the position sensor when the incident angle is 78 degrees.
圖9顯示當入射角為78度時藉由位置感測器所輸出的p偏振光的光強度分佈。 Figure 9 shows the light intensity distribution of p-polarized light output by the position sensor when the incident angle is 78 degrees.
圖10顯示藉由計算單元對兩個輸出信號執行差分處理的結果。 Figure 10 shows the result of performing differential processing on the two output signals by the computing unit.
圖11是顯示根據第二實施例的檢測裝置的配置的示意圖。 Fig. 11 is a schematic view showing the configuration of a detecting device according to the second embodiment.
圖12顯示藉由位置感測器所輸出的s偏振光的光強度分佈。 Figure 12 shows the light intensity distribution of the s-polarized light output by the position sensor.
圖13顯示藉由位置感測器所輸出的p偏振光的光強度分佈。 Figure 13 shows the light intensity distribution of p-polarized light output by the position sensor.
圖14顯示藉由計算單元對兩個輸出信號執行差分處理的結果。 Figure 14 shows the result of performing differential processing on two output signals by a computing unit.
圖15顯示在調整了偏振光狀態之後藉由位置感測器所輸出的s偏振光的光強度分佈。 Figure 15 shows the light intensity distribution of s-polarized light output by the position sensor after the polarization state is adjusted.
圖16顯示在調整了偏振光狀態之後藉由位置感測器所輸出的p偏振光的光強度分佈。 Figure 16 shows the light intensity distribution of p-polarized light output by the position sensor after the polarization state is adjusted.
圖17顯示在調整了偏振光狀態之後藉由計算單元對兩個輸出信號執行差分處理的結果。 Figure 17 shows the result of performing differential processing on the two output signals by the calculation unit after the polarization state is adjusted.
圖18顯示對於基板的檢測光的入射角與p偏振光的反射率以及s偏振光的反射率之間的關係。 Fig. 18 shows the relationship between the incident angle of the detection light for the substrate and the reflectance of the p-polarized light and the reflectance of the s-polarized light.
圖19顯示當入射角為70度時藉由位置感測器所輸出的s偏振光的光強度分佈。 Figure 19 shows the light intensity distribution of s-polarized light output by the position sensor when the incident angle is 70 degrees.
圖20顯示當入射角為70度時藉由位置感測器所輸出的p偏振光的光強度分佈。 Figure 20 shows the light intensity distribution of p-polarized light output by the position sensor when the incident angle is 70 degrees.
圖21顯示當入射角為86度時藉由位置感測器所輸出的s偏振光的光強度分佈。 Figure 21 shows the light intensity distribution of s-polarized light output by the position sensor when the incident angle is 86 degrees.
圖22顯示當入射角為86度時藉由位置感測器所輸出的p偏振光的光強度分佈。 Figure 22 shows the light intensity distribution of p-polarized light output by the position sensor when the incident angle is 86 degrees.
圖23顯示當入射角為80度時藉由位置感測器所輸出的s偏振光的光強度分佈。 Figure 23 shows the light intensity distribution of s-polarized light output by the position sensor when the incident angle is 80 degrees.
圖24顯示當入射角為80度時藉由位置感測器所輸出的p偏振光的光強度分佈。 Fig. 24 shows the light intensity distribution of p-polarized light output by the position sensor when the incident angle is 80 degrees.
圖25顯示在藉由計算單元對兩個信號執行差分處理之前的光強度分佈。 Figure 25 shows the light intensity distribution before the differential processing is performed on the two signals by the calculation unit.
圖26顯示在使p偏振光的信號在+t方向上偏移的同時執行差分處理的結果。 Fig. 26 shows the result of performing differential processing while shifting the signal of p-polarized light in the +t direction.
圖27顯示在使p偏振光的信號在-t方向上偏移的同時執行差分處理的結果。 Fig. 27 shows the result of performing differential processing while shifting the signal of p-polarized light in the -t direction.
在下文中,將參照附圖等給出本發明的較佳實施例的詳細描述。 Hereinafter, a detailed description of a preferred embodiment of the present invention will be given with reference to the accompanying drawings and the like.
圖1是包括根據本發明的第一實施例的檢測裝置的曝光設備的示意圖。曝光設備包括照明光學系統3、投影光學系統4和基板台7。照明光學系統3照明原版1,原版1藉由對準機構(未顯示)被定位到曝光設備 主體2。原版1為,例如,其上繪製待曝光的精細圖案(例如,電路圖案)的玻璃原版。基板台7包括保持基板5的基板保持單元6,且在垂直於投影光學系統4的光軸(Z軸)的XY平面上移動。基板5為,例如,玻璃基板。原版1的圖案經由投影光學系統4轉印到基板5上的曝光區域上。基板台7可在Z方向以及X方向和Y方向上移動,且還用作為用於使基板5和原版1聚焦的驅動系統。此外,鏡8被放置於基板台7上,且藉由使用雷射干涉儀9來控制在X方向上的驅動。關於Y方向,亦採用與X方向上的配置相似的配置(未顯示),且執行在XY平面上的精確驅動控制。 1 is a schematic view of an exposure apparatus including a detecting device according to a first embodiment of the present invention. The exposure apparatus includes an illumination optical system 3, a projection optical system 4, and a substrate stage 7. Illumination optical system 3 illuminates the original 1, the original 1 is positioned to the exposure device by an alignment mechanism (not shown) Main body 2. The original 1 is, for example, a glass master on which a fine pattern (for example, a circuit pattern) to be exposed is drawn. The substrate stage 7 includes a substrate holding unit 6 that holds the substrate 5, and moves on an XY plane perpendicular to the optical axis (Z axis) of the projection optical system 4. The substrate 5 is, for example, a glass substrate. The pattern of the original 1 is transferred onto the exposed area on the substrate 5 via the projection optical system 4. The substrate stage 7 is movable in the Z direction as well as in the X direction and the Y direction, and is also used as a drive system for focusing the substrate 5 and the master 1. Further, the mirror 8 is placed on the substrate stage 7, and the driving in the X direction is controlled by using the laser interferometer 9. Regarding the Y direction, a configuration similar to that in the X direction (not shown) is also employed, and precise drive control on the XY plane is performed.
檢測裝置包括投影系統22和光接收系統23。投影系統22包括光源10、測量狹縫11、偏振光調整單元12和光投影透鏡13。光接收系統23包括光接收透鏡14、偏振光束分離器(偏振光分離單元)15、位置感測器(檢測單元)16和17、以及計算單元18。光源10發出具有p偏振光分量和s偏振光分量的光,例如,自然偏振光(natural polarized light)或圓偏振光(circular polarized light),其具有帶有大約500到1200nm的波長的光。從光源10發出的檢測光19以相對於基板(待檢測物體)的法線呈θ的入射角被導引通過會聚透鏡(未示出)、測量狹縫11、偏振光調整單元12和光投影透鏡13。檢測光19在基板5的表面(待檢測表面)上被反射,經由光接收透鏡14入射到偏振光束分離器15(反射 光被用作為接收光20),且被分離成p偏振光和s偏振光。隨後,p偏振光的光被導引至位置感測器16,且s偏振光的光被導引至位置感測器17。兩個位置感測器16和17之間的位置關係藉由已知的方法(例如,基準物體的測量)事先被校正,來自這兩個感測器的信號輸出(數據)被傳輸到計算單元18,並執行計算處理。注意,在圖1中,儘管計算單元18被設置於光接收系統23中,但它也可以被設置於光接收系統23之外。 The detection device includes a projection system 22 and a light receiving system 23. The projection system 22 includes a light source 10, a measurement slit 11, a polarization adjustment unit 12, and a light projection lens 13. The light receiving system 23 includes a light receiving lens 14, a polarization beam splitter (polarized light separating unit) 15, position sensors (detecting units) 16 and 17, and a calculating unit 18. The light source 10 emits light having a p-polarized light component and an s-polarized light component, for example, naturally polarized light or circular polarized light, which has light having a wavelength of about 500 to 1200 nm. The detection light 19 emitted from the light source 10 is guided through a converging lens (not shown), a measurement slit 11, a polarization adjusting unit 12, and a light projection lens at an incident angle of θ with respect to a normal to the substrate (object to be detected). 13. The detection light 19 is reflected on the surface (surface to be detected) of the substrate 5, and is incident to the polarization beam splitter 15 via the light receiving lens 14 (reflection Light is used as the received light 20) and is separated into p-polarized light and s-polarized light. Subsequently, the light of the p-polarized light is guided to the position sensor 16, and the light of the s-polarized light is guided to the position sensor 17. The positional relationship between the two position sensors 16 and 17 is previously corrected by a known method (for example, measurement of a reference object), and signal outputs (data) from the two sensors are transmitted to the calculation unit. 18, and perform calculation processing. Note that in FIG. 1, although the calculation unit 18 is provided in the light receiving system 23, it may be disposed outside the light receiving system 23.
圖2是顯示在基板5的表面(待檢測表面)上所反射的光的路徑以及在基板5的後表面上所反射的光的路徑的示意圖,其中,光藉由圖1的檢測裝置被接收。接收光(前表面反射光)20是在基板5的前表面上所反射的光,且接收光(後表面反射光)21是在基板5的後表面上所反射的光。這兩個光被導引至光接收系統23。前表面反射光20藉由偏振光束分離器15被分離成p偏振光和s偏振光,p偏振光的光入射到位置感測器16上的點Ap的位置,且s偏振光的光入射到位置感測器17上的點As的位置。投影光學系統4的焦點位置(基板5的法線方向上的表面位置)基於點Ap和點As來確定。 2 is a schematic view showing a path of light reflected on a surface (surface to be inspected) of the substrate 5 and a path of light reflected on a rear surface of the substrate 5, wherein light is received by the detecting means of FIG. . The received light (front surface reflected light) 20 is light reflected on the front surface of the substrate 5, and the received light (back surface reflected light) 21 is light reflected on the rear surface of the substrate 5. These two lights are directed to the light receiving system 23. The front surface reflected light 20 is separated into p-polarized light and s-polarized light by the polarization beam splitter 15, and the light of the p-polarized light is incident on the position of the point Ap on the position sensor 16, and the light of the s-polarized light is incident on The position of the point As on the position sensor 17. The focus position of the projection optical system 4 (the surface position in the normal direction of the substrate 5) is determined based on the point Ap and the point As.
然而,在依據基板5的厚度和入射角之後表面反射光21的影響下,位置感測器16和17可能難以正確地測量點Ap和點As。如圖2中所示,後表面反射光21類似於前表面反射光20那樣藉由偏振光束分離器15被分離成p偏振光和s偏振光,p偏振光的光入射到位置 感測器16上的點Bp的位置,且s偏振光的光入射到位置感測器17上的點Bs的位置。 However, under the influence of the surface reflected light 21 after the thickness of the substrate 5 and the incident angle, the position sensors 16 and 17 may have difficulty measuring the point Ap and the point As correctly. As shown in FIG. 2, the rear surface reflected light 21 is separated into p-polarized light and s-polarized light by the polarization beam splitter 15 like the front surface reflected light 20, and the light of the p-polarized light is incident on the position. The position of the point Bp on the sensor 16 and the light of the s-polarized light are incident on the position of the point Bs on the position sensor 17.
圖3是解釋位置感測器16和17不受到後表面反射光21影響的情況的示意圖。在圖3中所示的基板5的厚度和入射角θ的情況下,點Ap(點As)和點Bp(點Bs)變為彼此分離距離“d”的位置關係。位置感測器16和17的輸出對應到由測量狹縫11所形成的光強度分佈。在此,一個狹縫被設置於測量狹縫11中以便簡化描述。圖4顯示在圖3的情況下藉由位置感測器16或17所輸出的光強度分佈。水平軸表示在位置感測器16或17的光接收表面上的位置,且垂直軸表示待接收的光強度。如圖4中所示,前表面反射光20的p偏振光(s偏振光)在位置感測器16(17)的光接收表面上的光強度分佈的強度峰值為點Ap(As)。這同樣適用於後表面反射光21。在圖3的基板5的厚度和入射角θ的情況下,前表面反射光20和後表面反射光21的光強度分佈不會重疊,且位置感測器16和17可以檢測點Ap和點As,而不受到後表面反射光21的影響。 FIG. 3 is a diagram for explaining a case where the position sensors 16 and 17 are not affected by the back surface reflected light 21. In the case of the thickness of the substrate 5 and the incident angle θ shown in FIG. 3, the point Ap (point As) and the point Bp (point Bs) become positional relationships separated from each other by a distance "d". The outputs of the position sensors 16 and 17 correspond to the light intensity distribution formed by the measurement slits 11. Here, a slit is provided in the measurement slit 11 to simplify the description. FIG. 4 shows the light intensity distribution output by the position sensor 16 or 17 in the case of FIG. The horizontal axis represents the position on the light receiving surface of the position sensor 16 or 17, and the vertical axis represents the light intensity to be received. As shown in FIG. 4, the intensity peak of the light intensity distribution of the p-polarized light (s-polarized light) of the front surface reflected light 20 on the light receiving surface of the position sensor 16 (17) is a point Ap (As). The same applies to the back surface reflected light 21. In the case of the thickness of the substrate 5 of FIG. 3 and the incident angle θ, the light intensity distributions of the front surface reflected light 20 and the rear surface reflected light 21 do not overlap, and the position sensors 16 and 17 can detect the point Ap and the point As. Without being affected by the back surface reflected light 21.
圖5是解釋位置感測器16和17受到後表面反射光21影響的情況的示意圖。圖5中所示的基板5比圖3的基板5薄(例如,30μm),且入射角θ與圖3中的入射角θ相同。在此情況下,距離d比圖3中的距離d更窄。圖6顯示在圖5的情況下藉由位置感測器16或17所輸出的光強度分佈。如圖6中所示,在圖5的基板5的 厚度和入射角θ的情況下,前表面反射光20和後表面反射光21的光強度分佈重疊。因此,由於後表面反射光21的影響,位置感測器16和17可能難以正確地測量點Ap和點As。 FIG. 5 is a diagram for explaining a case where the position sensors 16 and 17 are affected by the back surface reflected light 21. The substrate 5 shown in FIG. 5 is thinner than the substrate 5 of FIG. 3 (for example, 30 μm), and the incident angle θ is the same as the incident angle θ in FIG. In this case, the distance d is narrower than the distance d in FIG. FIG. 6 shows the light intensity distribution output by the position sensor 16 or 17 in the case of FIG. As shown in FIG. 6, on the substrate 5 of FIG. In the case of the thickness and the incident angle θ, the light intensity distributions of the front surface reflected light 20 and the rear surface reflected light 21 overlap. Therefore, the position sensors 16 and 17 may have difficulty measuring the point Ap and the point As correctly due to the influence of the back surface reflected light 21.
圖7顯示對於基板5的檢測光19的入射角與p偏振光的反射率和s偏振光的反射率之間的關係。前表面反射光20的p偏振光由黑色輪廓的圓所顯示,前表面反射光20的s偏振光由黑色實心的圓所顯示,後表面反射光21的p偏振光由黑色輪廓的三角形所顯示,且後表面反射光21的s偏振光由黑色實心的三角形所顯示。從圖7中可以看出的是,在78度的入射角附近,後表面反射光21的p偏振光的反射率與後表面反射光21的s偏振光的反射率相等,且前表面反射光20的s偏振光的反射率與前表面反射光20的p偏振光的反射率相等或者大於其兩倍。 FIG. 7 shows the relationship between the incident angle of the detection light 19 for the substrate 5 and the reflectance of the p-polarized light and the reflectance of the s-polarized light. The p-polarized light of the front surface reflected light 20 is displayed by a circle of a black outline, the s-polarized light of the front surface reflected light 20 is displayed by a black solid circle, and the p-polarized light of the rear surface reflected light 21 is displayed by a triangle of a black outline And the s-polarized light of the back surface reflected light 21 is displayed by a black solid triangle. As can be seen from FIG. 7, the reflectance of the p-polarized light of the rear surface reflected light 21 is equal to the reflectance of the s-polarized light of the rear surface reflected light 21 in the vicinity of the incident angle of 78 degrees, and the front surface reflects light. The reflectance of the s-polarized light of 20 is equal to or greater than twice the reflectance of the p-polarized light of the front-surface reflected light 20.
圖8顯示,當入射角被設定為78度且基板5的厚度被作成為如圖6中所示的那樣薄時,從位置感測器17所輸出的s偏振光(波形數據)的光強度分佈。由位置感測器17所輸出的信號c1是藉由組合顯示前表面反射光20的s偏振光的信號a1與顯示後表面反射光21的s偏振光的信號b1所獲得的信號。圖9顯示,當入射角被設定為78度且基板5的厚度被作成為如圖6中所示的那樣薄時,由位置感測器16所輸出的p偏振光的光強度分佈。由位置感測器16所輸出的信號c1’是藉由組合顯示前表面 反射光20的p偏振光的信號a1’與顯示後表面反射光21的p偏振光的信號b1’所獲得的信號。 8 shows that when the incident angle is set to 78 degrees and the thickness of the substrate 5 is made thin as shown in FIG. 6, the light intensity of the s-polarized light (waveform data) output from the position sensor 17 is shown. distributed. The signal c 1 outputted by the position sensor 17 is a signal obtained by combining the signal a 1 of the s-polarized light that reflects the front surface reflected light 20 with the signal b 1 of the s-polarized light that reflects the back surface reflected light 21 . Fig. 9 shows a light intensity distribution of p-polarized light outputted from the position sensor 16 when the incident angle is set to 78 degrees and the thickness of the substrate 5 is made thin as shown in Fig. 6. The signal c 1 ' outputted by the position sensor 16 is obtained by combining the signal a 1 ' of the p-polarized light that reflects the front surface reflected light 20 with the signal b 1 ' of the p-polarized light that reflects the back surface reflected light 21. signal of.
藉由位置感測器16和17所檢測的後表面反射光21的反射率相等的事實意味著偏振光信號b1和b1’相等,這是因為從光源10所發出的光通過相同的路線抵達偏振光束分離器15。圖10顯示藉由計算單元18執行位置感測器17的輸出信號c1與位置感測器16的輸出信號c1’之間的差分處理的結果。由於信號b1和信號b1’相等,在差分處理之後保留的信號c1-c1’(差分數據)表示顯示前表面反射光20的p偏振光的信號a1與顯示前表面反射光20的s偏振光的信號a1’之間的差a1-a1’。 The fact that the reflectances of the back surface reflected light 21 detected by the position sensors 16 and 17 are equal means that the polarized light signals b 1 and b 1 ' are equal because the light emitted from the light source 10 passes through the same route. The polarizing beam splitter 15 is reached. FIG. 10 shows the result of the differential processing between the output signal c 1 of the position sensor 17 and the output signal c 1 ' of the position sensor 16 by the calculation unit 18. Since the signal b 1 and the signal b 1 ' are equal, the signal c 1 -c 1 ' (differential data) remaining after the differential processing represents the signal a 1 of the p-polarized light showing the front surface reflected light 20 and the reflected light of the front surface 20 The difference a 1 -a 1 ' between the signals a 1 ' of the s-polarized light.
由於信號a1和信號a1’為依據彼此間的反射率差的相似關係(similar relation),每個信號的重心的位置及其差分信號不會改變。因此,獲得差分信號(a1-a1’)的重心的位置相當於獲得基板5的表面位置。(然而,假設的是a1-a1’≠0。) Since the signal a 1 and the signal a 1 ' are similar relations based on the reflectance differences between each other, the position of the center of gravity of each signal and its differential signal do not change. Therefore, obtaining the position of the center of gravity of the differential signal (a 1 - a 1 ') corresponds to obtaining the surface position of the substrate 5. (However, it is assumed that a 1 -a 1 '≠0.)
如上所述,本實施例的檢測裝置(檢測方法)可以精確地檢測基板5的表面位置,而不管基板5的厚度如何,且根據本實施例,能夠提供有利於檢測基板的表面的高度的檢測方法。 As described above, the detecting device (detecting method) of the present embodiment can accurately detect the surface position of the substrate 5 regardless of the thickness of the substrate 5, and according to the present embodiment, it is possible to provide detection for facilitating detection of the height of the surface of the substrate method.
接下來,將給出對根據本發明的第二實施例的檢測方法的描述。以上所描述的第一實施例假設入射角 可以被設定為使得後表面反射光21的偏振光信號中的每個偏振光信號相等。相反地,本實施例可以處理在設定入射角方面沒有靈活性的情況,或是後表面反射光21的偏振光信號因為組分(材料)、調整裝配等的誤差的發生而無法為相等的情況。 Next, a description will be given of a detecting method according to a second embodiment of the present invention. The first embodiment described above assumes an incident angle It may be set such that each of the polarized light signals of the rear surface reflected light 21 is equal. Conversely, the present embodiment can deal with the case where there is no flexibility in setting the incident angle, or the polarized light signal of the back surface reflected light 21 cannot be equal due to the occurrence of errors in components (materials), adjustment assembly, and the like. .
例如,考慮入射角在圖7中被設定為θ1的情況。在此情況下,後表面反射光21的p偏振光的反射率和後表面反射光21的s偏振光的反射率不相等,且在這種狀態下即使執行差分處理,也不可能精確地獲得基板5的表面位置。 For example, consider a case where the incident angle is set to θ1 in FIG. In this case, the reflectance of the p-polarized light of the rear surface reflected light 21 and the reflectance of the s-polarized light of the rear surface reflected light 21 are not equal, and even in this state, even if differential processing is performed, it is impossible to accurately obtain The surface position of the substrate 5.
因此,在本實施例中,藉由使用圖2中所示的投影系統22的偏振光調整單元12、或者設置於圖11中所示的檢測裝置中的光接收系統23的偏振光調整單元12,光的偏振光狀態被調整為使得藉由位置感測器16和17所輸出的p偏振光的信號和s偏振光的信號相等。偏振光調整單元12可為具有包括像是偏振片(polarizing plate)、λ板或各向異性光學晶體(anisotropic optical crystal)之類的光學構件的調整機構的一種偏振光調整單元。如果它被設置於光接收系統23中,則較佳地使用像是ND濾光器(filter)之類的光量調整光學構件。 Therefore, in the present embodiment, the polarization adjusting unit 12 of the light receiving system 12 of the projection system 22 shown in Fig. 2 or the light receiving system 12 of the light receiving system 23 provided in the detecting device shown in Fig. 11 is used. The polarization state of the light is adjusted such that the signal of the p-polarized light and the signal of the s-polarized light output by the position sensors 16 and 17 are equal. The polarization adjusting unit 12 may be a polarization adjusting unit having an adjustment mechanism including an optical member such as a polarizing plate, a λ plate, or an anisotropic optical crystal. If it is provided in the light receiving system 23, it is preferable to use a light amount adjusting optical member such as an ND filter.
執行光的偏振光狀態的調整以在前表面反射光20的偏振光信號的每個偏振光信號的反射率中具有足夠的差異,並維持相似關係。另外,在調整之前,在入射角θ1的情況下的前表面反射光20和後表面反射光21的 偏振光的反射率被記錄,或者藉由位置感測器16和17被測量。藉由以上的調整,執行與在第一實施例中的差分處理相同的差分處理,且因此,可以獲得與第一實施例中的效果相似的效果。 The adjustment of the polarization state of the light is performed to have a sufficient difference in the reflectance of each polarized light signal of the polarized light signal of the front surface reflected light 20, and maintain a similar relationship. In addition, before the adjustment, the front surface reflected light 20 and the rear surface reflected light 21 in the case of the incident angle θ1 The reflectance of the polarized light is recorded or measured by position sensors 16 and 17. With the above adjustment, the same differential processing as that in the first embodiment is performed, and therefore, effects similar to those in the first embodiment can be obtained.
圖12顯示當入射角被設定為θ1時藉由位置感測器17所輸出的s偏振光的光強度分佈。由位置感測器17所輸出的信號c2是藉由組合顯示前表面反射光20的s偏振光的信號a2與顯示後表面反射光21的s偏振光的信號b2而獲得的信號。圖13顯示在相同情況下藉由位置感測器16所輸出的p偏振光的光強度分佈。由位置感測器16所輸出的信號c2’是藉由組合顯示前表面反射光20的p偏振光的信號a2’與顯示後表面反射光21的p偏振光的信號b2’而獲得的信號。 FIG. 12 shows the light intensity distribution of the s-polarized light output by the position sensor 17 when the incident angle is set to θ1. The signal c 2 outputted by the position sensor 17 is a signal obtained by combining the signal a 2 of the s-polarized light that reflects the front surface reflected light 20 with the signal b 2 of the s-polarized light that reflects the back surface reflected light 21 . FIG. 13 shows the light intensity distribution of p-polarized light output by the position sensor 16 in the same case. The signal c 2 ' outputted by the position sensor 16 is obtained by combining the signal a 2 ' of the p-polarized light that reflects the front surface reflected light 20 with the signal b 2 ' of the p-polarized light that reflects the back surface reflected light 21. signal of.
圖14顯示藉由計算單元18執行位置感測器17的輸出信號c2與位置感測器16的輸出信號c2’之間的差分處理的結果。由於信號b2和信號b2’是不同的,差分處理信號(c2-c2’)成為前表面反射光的偏振光差分信號(a2-a2’)與後表面反射光的偏振光差分信號(b2-b2’)的混合信號。因此,不可能精確地獲得基板5的表面位置。 FIG. 14 shows the result of the differential processing between the output signal c 2 of the position sensor 17 and the output signal c 2 ' of the position sensor 16 by the calculation unit 18. Since the signal b 2 and the signal b 2 ' are different, the differential processed signal (c 2 -c 2 ') becomes the polarized light differential signal (a 2 -a 2 ') of the front surface reflected light and the polarized light of the back surface reflected light. A mixed signal of differential signals (b 2 -b 2 '). Therefore, it is impossible to accurately obtain the surface position of the substrate 5.
基於如上所述之已經事先被記錄的反射率,偏振光調整單元12調整每個反射光的偏振光狀態,使得後表面反射光21的偏振光信號b2和b2’相等,並使得前表面反射光20的偏振光信號a2和a2’變為相似。圖15顯示在調整了偏振光狀態之後藉由位置感測器17所輸出的s 偏振光的光強度分佈。圖16顯示在調整了偏振光狀態之後藉由位置感測器16所輸出的p偏振光的光強度分佈。如圖15中所示,藉由將圖12中所示的每個信號設定為α倍來執行調整,且如圖16中所示,藉由將圖13中所示的每個信號設定為β倍來執行調整。每個信號在調整之後被表示如下:g=αa2,h=αb2,i=αc2,g’=βa2’,h’=βb2’,I’=βc2’。 Based on the reflectance that has been recorded in advance as described above, the polarization adjusting unit 12 adjusts the polarization state of each of the reflected lights such that the polarized light signals b 2 and b 2 ' of the back surface reflected light 21 are equal, and the front surface is made The polarized light signals a 2 and a 2 ' of the reflected light 20 become similar. Fig. 15 shows the light intensity distribution of the s-polarized light outputted by the position sensor 17 after the polarization state is adjusted. FIG. 16 shows the light intensity distribution of the p-polarized light output by the position sensor 16 after the polarization state is adjusted. As shown in FIG. 15, the adjustment is performed by setting each signal shown in FIG. 12 to α times, and as shown in FIG. 16, by setting each signal shown in FIG. 13 to β. Double to perform the adjustment. Each signal is represented after adjustment as follows: g = αa 2 , h = αb 2 , i = αc 2 , g' = βa 2 ', h' = βb 2 ', I' = βc 2 '.
圖17顯示在偏振光的調整之後藉由計算單元18執行位置感測器17的輸出信號i與位置感測器16的輸出信號i’之間的差分處理的結果。基於偏振光的調整,後表面反射光21的偏振光信號被表示如下:h=h’,即,αb2=βb2’;且其額外地被表示如下:i-i’=αc2-βc2’=αa2-βa2’≠0。因此,在差分處理之後保留的信號i-i’表示顯示前表面反射光20的p偏振光的信號a2與顯示前表面反射光20的s偏振光的信號a2’之間的差a2-a2’。 FIG. 17 shows the result of the differential processing between the output signal i of the position sensor 17 and the output signal i' of the position sensor 16 by the calculation unit 18 after the adjustment of the polarized light. Based on the adjustment of the polarized light, the polarized light signal of the back surface reflected light 21 is expressed as follows: h = h', that is, αb 2 = βb 2 '; and it is additionally expressed as follows: i-i' = αc 2 - βc 2 '=αa 2 -βa 2 '≠0. Therefore, the signal i-i' retained after the differential processing represents the difference a 2 between the signal a 2 showing the p-polarized light of the front surface reflected light 20 and the signal a 2 ' showing the s-polarized light of the front surface reflected light 20 -a 2 '.
由於信號a2和信號a2’為依據彼此之間的反射率差的相似關係,每個信號的重心的位置及其差分信號不會改變。因此,獲得差分信號(a2-a2’)的重心的位置相當於獲得基板5的表面位置。如上所述,本實施例的檢測方法亦達成與第一實施例中的效果類似的效果。 Since the signal a 2 and the signal a 2 ' are based on the similar relationship of the reflectance differences between each other, the position of the center of gravity of each signal and its differential signal do not change. Therefore, obtaining the position of the center of gravity of the differential signal (a 2 - a 2 ') corresponds to obtaining the surface position of the substrate 5. As described above, the detecting method of the present embodiment also achieves effects similar to those in the first embodiment.
接下來,將給出對根據本發明的第三實施例的檢測方法的描述。在第一實施例中,後表面反射光21 的p偏振光和s偏振光的條件被設定為相等。在本實施例中,基板5的表面位置可藉由設定條件而精確地被檢測,在該條件中,後表面反射光21的p偏振光與前表面反射光20的s偏振光相等,且後表面反射光21的s偏振光與前表面反射光20的p偏振光相等。 Next, a description will be given of a detecting method according to a third embodiment of the present invention. In the first embodiment, the rear surface reflects light 21 The conditions of the p-polarized light and the s-polarized light are set to be equal. In the present embodiment, the surface position of the substrate 5 can be accurately detected by setting conditions in which the p-polarized light of the rear surface reflected light 21 is equal to the s-polarized light of the front surface reflected light 20, and thereafter The s-polarized light of the surface reflected light 21 is equal to the p-polarized light of the front surface reflected light 20.
圖18顯示對於基板5之檢測光19的入射角與p偏振光和s偏振光的反射率之間的關係。前表面反射光20的p偏振光由黑色輪廓的圓所顯示,s偏振光由黑色實心的圓所顯示,後表面反射光21的p偏振光由黑色的三角形所顯示,且後表面反射光21的s偏振光由黑色實心的三角形所顯示。從圖18可以看出的是,在80度的入射角附近,後表面反射光21的p偏振光的反射率與前表面反射光20的s偏振光的反射率相等,且後表面反射光21的s偏振光的反射率與前表面反射光20的p偏振光的反射率相等。 Fig. 18 shows the relationship between the incident angle of the detection light 19 for the substrate 5 and the reflectance of the p-polarized light and the s-polarized light. The p-polarized light of the front surface reflected light 20 is displayed by a circle of a black outline, the s-polarized light is displayed by a black solid circle, the p-polarized light of the rear surface reflected light 21 is displayed by a black triangle, and the rear surface reflects the light 21 The s-polarized light is shown by a black solid triangle. As can be seen from Fig. 18, in the vicinity of the incident angle of 80 degrees, the reflectance of the p-polarized light of the rear surface reflected light 21 is equal to the reflectance of the s-polarized light of the front surface reflected light 20, and the back surface reflects the light 21 The reflectance of the s-polarized light is equal to the reflectance of the p-polarized light of the front-surface reflected light 20.
圖19顯示,當入射角被設定為70度且基板5的厚度被作成為薄時(如圖6中所示),藉由位置感測器17所輸出的s偏振光的光強度分佈。由位置感測器17所輸出的信號c3是藉由結合顯示前表面反射光20的s偏振光的信號a3與顯示後表面反射光21的s偏振光的信號b3而獲得的信號。圖20顯示,當入射角被設定為70度且基板5的厚度被作成為薄的時(如圖6所示),藉由位置感測器16所輸出的p偏振光的光強度分佈。由位置感測器16所輸出的信號c3’是藉由結合顯示前表面反射光20的p 偏振光的信號a3’與顯示後表面反射光21的p偏振光的信號b3’而獲得的信號。注意,在藉由每個位置感測器所檢測的信號中,在這些圖式中的波形被標準化(normalized )為具有大輸入的信號的峰值。亦即,b3=b3’成立。圖19的信號c3和圖20的信號c3’不是具有彼此對稱的關係的信號。 Fig. 19 shows the light intensity distribution of the s-polarized light outputted by the position sensor 17 when the incident angle is set to 70 degrees and the thickness of the substrate 5 is made thin (as shown in Fig. 6). The signal c 3 outputted from the position sensor 17 is a signal obtained by combining the signal a 3 of the s-polarized light that reflects the front surface reflected light 20 with the signal b 3 of the s-polarized light that reflects the back surface reflected light 21 . 20 shows the light intensity distribution of the p-polarized light outputted by the position sensor 16 when the incident angle is set to 70 degrees and the thickness of the substrate 5 is made thin (as shown in FIG. 6). The signal c 3 ' output by the position sensor 16 is obtained by combining the signal a 3 ' of the p-polarized light that reflects the front surface reflected light 20 with the signal b 3 ' of the p-polarized light that reflects the back surface reflected light 21. signal of. Note that in the signals detected by each position sensor, the waveforms in these patterns are normalized to the peaks of the signals with large inputs. That is, b 3 = b 3 ' is established. The signal c 3 of FIG. 19 and the signal c 3 ' of FIG. 20 are not signals having a symmetrical relationship with each other.
圖21顯示,當入射角被設定為86度且基板5的厚度被作成為薄的時(如圖6所示),藉由位置感測器17所輸出的s偏振光的光強度分佈。由位置感測器17所輸出的信號c4是藉由組合顯示前表面反射光20的s偏振光的信號a4與顯示後表面反射光21的s偏振光的信號b4而獲得的信號。圖22顯示,當入射角被設定為86度且基板5的厚度被作成為薄的時(如圖6所示),藉由位置感測器16所輸出的p偏振光的光強度分佈。由位置感測器16所輸出的信號c4’是藉由結合顯示前表面反射光20的p偏振光的信號a4’與顯示後表面反射光21的p偏振光的信號b4’而獲得的信號。注意,在藉由每個位置感測器所檢測的信號中,在這些圖式中的波形被標準化為具有大輸出的信號的峰值。亦即,a4=a4’成立。圖21的信號c4與圖22的信號c4’不是具有彼此對稱的關係的信號。 21 shows the light intensity distribution of the s-polarized light outputted by the position sensor 17 when the incident angle is set to 86 degrees and the thickness of the substrate 5 is made thin (as shown in FIG. 6). The signal c 4 outputted from the position sensor 17 is a signal obtained by combining the signal a 4 of the s-polarized light that reflects the front surface reflected light 20 with the signal b 4 of the s-polarized light that reflects the back surface reflected light 21 . Fig. 22 shows the light intensity distribution of the p-polarized light outputted by the position sensor 16 when the incident angle is set to 86 degrees and the thickness of the substrate 5 is made thin (as shown in Fig. 6). The signal c 4 ' outputted by the position sensor 16 is obtained by combining the signal a 4 ' of the p-polarized light that reflects the front surface reflected light 20 with the signal b 4 ' of the p-polarized light that reflects the back surface reflected light 21. signal of. Note that in the signals detected by each position sensor, the waveforms in these patterns are normalized to the peaks of the signals having large outputs. That is, a 4 = a 4 ' is established. The signal c 4 of Fig. 21 and the signal c 4 ' of Fig. 22 are not signals having a symmetrical relationship with each other.
圖23顯示,當入射角被設定為80度且基板5的厚度被作成為薄的時(如圖6所示),藉由位置感測器17所輸出的s偏振光的光強度分佈。由位置感測器17所輸出的信號c5是藉由組合顯示前表面反射光20的s偏振 光的信號a5與顯示後表面反射光21的s偏振光的信號b5而獲得的信號。圖24顯示,當入射角被設定為80度且基板5的厚度被作成為薄的時(如圖6所示),藉由位置感測器16所輸出的p偏振光的光強度分佈。由位置感測器16所輸出的信號c5’是藉由組合顯示前表面反射光20的p偏振光的信號a5’與顯示後表面反射光21的p偏振光的信號b5’而獲得的信號。注意,在藉由每個位置感測器所檢測的信號中,在這些圖式中的波形被標準化為在大的輸出的信號的峰值。亦即,a5=b5’成立。在此圖式中,a5=b5’、b5=a5’成立,使得信號c5和c5’是具有彼此之間的對稱關係的信號。 Fig. 23 shows the light intensity distribution of the s-polarized light outputted by the position sensor 17 when the incident angle is set to 80 degrees and the thickness of the substrate 5 is made thin (as shown in Fig. 6). The signal c 5 outputted from the position sensor 17 is a signal obtained by combining the signal a 5 of the s-polarized light that reflects the front surface reflected light 20 with the signal b 5 of the s-polarized light that reflects the back surface reflected light 21 . Fig. 24 shows the light intensity distribution of the p-polarized light outputted by the position sensor 16 when the incident angle is set to 80 degrees and the thickness of the substrate 5 is made thin (as shown in Fig. 6). The signal c 5 ' output by the position sensor 16 is obtained by combining the signal a 5 ' of the p-polarized light showing the front surface reflected light 20 and the signal b 5 ' of the p-polarized light showing the back surface reflected light 21 signal of. Note that in the signals detected by each position sensor, the waveforms in these patterns are normalized to the peak of the signal at the large output. That is, a 5 = b 5 ' is established. In this figure, a 5 = b 5 ', b 5 = a 5 ' holds, so that the signals c 5 and c 5 ' are signals having a symmetrical relationship with each other.
如上所述,顯示出以下特徵:取決於入射角θ,使得藉由位置感測器16和17所檢測的信號形狀具有彼此之間的對稱關係的設定是可能的。注意,這些信號形狀還可以依據在基板5與基板保持單元6之間的界面中的反射率而改變。另外,反射率亦可依據偏振光狀態而變化。因此,有必要在知道每種偏振光在基板5與基板保持單元6之間的界面上的反射率之後事先設定入射角θ。在上面的描述中,假設的是,對於每種偏振光,在界面中的反射率被設定為100%。當入射角θ藉由共同改變每種偏振光在界面上的反射率、或者藉由改變每種偏振光的反射率來設定時,其中藉由位置感測器16和17所檢測的信號形狀具有彼此之間的對稱關係的入射角θ會落在θ=60到80度的範圍內。 As described above, the following feature is exhibited: it is possible to make the setting of the signal shapes detected by the position sensors 16 and 17 having a symmetrical relationship with each other depending on the incident angle θ. Note that these signal shapes may also vary depending on the reflectance in the interface between the substrate 5 and the substrate holding unit 6. In addition, the reflectance may also vary depending on the state of the polarized light. Therefore, it is necessary to set the incident angle θ in advance after knowing the reflectance of each polarized light at the interface between the substrate 5 and the substrate holding unit 6. In the above description, it is assumed that the reflectance in the interface is set to 100% for each polarized light. When the incident angle θ is set by collectively changing the reflectance of each polarized light at the interface, or by changing the reflectance of each polarized light, the shape of the signal detected by the position sensors 16 and 17 has The incident angle θ of the symmetrical relationship between each other falls within the range of θ = 60 to 80 degrees.
圖25顯示在由計算單元18執行藉由位置感測器16和17所檢測的信號(a5、b5、a5’和b5’)的差分處理之前的信號。s偏振光由實線所顯示,且p偏振光由虛線所顯示。此外,P1和P2為與已經事先獲得的每種偏振光對應的輸出峰值。藉由使p偏振光的信號在+t方向或-t方向上相對於s偏振光的信號偏移,且藉由從s偏振光的信號減去p偏振光的信號,差分信號的計算被執行。 FIG. 25 shows signals before the differential processing of the signals (a 5 , b 5 , a 5 ', and b 5 ') detected by the position sensors 16 and 17 by the calculation unit 18. The s-polarized light is shown by the solid line, and the p-polarized light is shown by the broken line. Further, P1 and P2 are output peaks corresponding to each of the polarized lights that have been obtained in advance. The calculation of the differential signal is performed by shifting the signal of the p-polarized light with respect to the signal of the s-polarized light in the +t direction or the -t direction, and by subtracting the signal of the p-polarized light from the signal of the s-polarized light. .
圖26顯示在使p偏振光的信號在+t方向上偏移的同時基於s偏振光來執行p偏振光的信號的差分處理的結果。在差分處理之後的信號的波幅P等於P1時,最大位置t1變為前表面反射光20入射到位置感測器17中的位置As,且若此時的偏移量由Δt表示,則t1+Δt變為後表面反射光21入射到位置感測器17中的位置Bs。在此,當差分處理之後的信號的波幅P等於P1時,後表面反射光21的s偏振光和前表面反射光20的p偏振光相互抵消。 Fig. 26 shows the result of differential processing of a signal for performing p-polarized light based on s-polarized light while shifting the signal of p-polarized light in the +t direction. When the amplitude P of the signal after the differential processing is equal to P1, the maximum position t1 becomes the position As of the front surface reflected light 20 incident on the position sensor 17, and if the offset at this time is represented by Δt, then t1+ Δt becomes the position Bs at which the rear surface reflected light 21 is incident on the position sensor 17. Here, when the amplitude P of the signal after the differential processing is equal to P1, the s-polarized light of the rear surface reflected light 21 and the p-polarized light of the front surface reflected light 20 cancel each other.
圖27顯示在使p偏振光的信號在-t方向上偏移的同時基於s偏振光的信號來執行p偏振光的信號的差分處理的結果。當差分處理之後的信號的波幅P等於P2時,最大位置t2變為後表面反射光21入射到位置感測器16中的位置Bp,且若此時的偏移量由-Δt表示,則t2-Δt變為前表面反射光20入射到位置感測器16中的位置Ap。在此,當差分處理之後的信號的波幅P等於P2時,後表面反射光21的p偏振光和前表面反射光20的s偏振 光相互抵消。 FIG. 27 shows a result of differential processing of a signal for performing p-polarized light based on a signal of s-polarized light while shifting a signal of p-polarized light in the -t direction. When the amplitude P of the signal after the differential processing is equal to P2, the maximum position t2 becomes the position Bp at which the rear surface reflected light 21 is incident into the position sensor 16, and if the offset at this time is represented by -Δt, then t2 -Δt becomes the position Ap of the front surface reflected light 20 incident on the position sensor 16. Here, when the amplitude P of the signal after the differential processing is equal to P2, the s-polarized light of the rear surface reflected light 21 and the s-polarized light of the front surface reflected light 20 Light cancels each other.
如上所述,根據本實施例的檢測方法,藉由使由一個位置感測器所檢測的信號相對於由另一個位置感測器所檢測的信號向至少一個方向偏移,差分處理被執行,且基板5的表面位置因此可基於差分信號的最大位置和偏移量而被檢測。然而,當差分信號的波幅為P=P1時,最大位置t1處於在與偏移方向(+t)相反的方向上的位置,且當差分信號的波幅為P=P2時,最大位置t2處於在與偏移方向(-t)相反的方向上的位置。另外,差分處理可為從p偏振光信號(虛線)減去s偏振光信號(實線)的一種差分處理。 As described above, according to the detecting method of the present embodiment, the differential processing is performed by shifting the signal detected by one position sensor in at least one direction with respect to the signal detected by the other position sensor, And the surface position of the substrate 5 can thus be detected based on the maximum position and offset of the differential signal. However, when the amplitude of the differential signal is P=P1, the maximum position t1 is in a position opposite to the offset direction (+t), and when the amplitude of the differential signal is P=P2, the maximum position t2 is at The position in the opposite direction to the offset direction (-t). In addition, the differential processing may be a differential processing that subtracts the s-polarized optical signal (solid line) from the p-polarized optical signal (dashed line).
注意,即使發生部件(材料)、組裝、調整等的誤差且未展現出如圖18所示的反射率特性,本實施例的差分處理也可以如同在第二實施例中那樣藉由調整偏振光狀態來執行。 Note that even if an error of a component (material), assembly, adjustment, or the like occurs and does not exhibit the reflectance characteristic as shown in FIG. 18, the differential processing of the present embodiment can be adjusted by polarizing light as in the second embodiment. State to execute.
根據本發明的實施例的物品製造方法在製造像是微裝置(例如,半導體裝置等)、具有微結構的元件等之類的物品時為理想的。物品製造方法可包括使用前述曝光設備在物體上形成潛像圖案的步驟(例如,曝光過程);以及對其上已經在前一步驟中形成潛像圖案的物體進行顯影的步驟。此外,物品製造方法可包括其它的已知步驟(氧化、成膜、氣相沉積、摻雜、平坦化、蝕刻、抗 蝕劑剝離、切割、接合、封裝等)。相較於傳統的裝置製造方法,本實施例的裝置製造方法在裝置的性能、質量、生產率和生產成本中的至少一個方面為有利的。 The article manufacturing method according to an embodiment of the present invention is ideal when manufacturing an article such as a micro device (for example, a semiconductor device or the like), a member having a microstructure, or the like. The article manufacturing method may include a step of forming a latent image pattern on the object using the aforementioned exposure apparatus (for example, an exposure process); and a step of developing an object on which the latent image pattern has been formed in the previous step. In addition, the article manufacturing method may include other known steps (oxidation, film formation, vapor deposition, doping, planarization, etching, resistance). Etching, cutting, bonding, encapsulation, etc.). The device manufacturing method of the present embodiment is advantageous in at least one of performance, quality, productivity, and production cost of the device as compared with the conventional device manufacturing method.
雖然已經參照例示性實施例描述了本發明,但應理解的是,本發明不限於所揭露的例示性實施例。以下申請專利範圍的範疇應被賦予最寬廣的解釋,以涵蓋所有這類型的修改以及相等的結構和功能。 While the invention has been described with reference to the preferred embodiments thereof, it is understood that the invention is not limited to the illustrative embodiments disclosed. The scope of the following claims should be accorded the broadest interpretation to cover all such modifications and equivalent structures and functions.
本申請案要求於2015年12月25日提交的日本專利第2015-253117號申請案的權益,其全文在此藉由引用被併入。 The present application claims the benefit of Japanese Patent Application No. 2015-253117, filed on Dec. 25, 2015, which is hereby incorporated by reference.
1‧‧‧原版 1‧‧‧ original
2‧‧‧曝光設備主體 2‧‧‧Exposure device body
3‧‧‧照明光學系統 3‧‧‧Lighting optical system
4‧‧‧投影光學系統 4‧‧‧Projection optical system
5‧‧‧基板 5‧‧‧Substrate
6‧‧‧基板保持單元 6‧‧‧Substrate holding unit
7‧‧‧基板台 7‧‧‧ substrate table
8‧‧‧鏡 8‧‧ ‧ mirror
9‧‧‧雷射干涉儀 9‧‧‧Laser Interferometer
10‧‧‧光源 10‧‧‧Light source
11‧‧‧測量狹縫 11‧‧‧Measurement slit
12‧‧‧偏振光調整單元 12‧‧‧Polarization unit
13‧‧‧光投影透鏡 13‧‧‧Light projection lens
14‧‧‧光接收透鏡 14‧‧‧Light receiving lens
15‧‧‧偏振光束分離器 15‧‧‧Polarized beam splitter
16‧‧‧位置感測器 16‧‧‧ position sensor
17‧‧‧位置感測器 17‧‧‧ position sensor
18‧‧‧計算單元 18‧‧‧Computation unit
19‧‧‧檢測光 19‧‧‧Detecting light
20‧‧‧接收光(前表面反射光) 20‧‧‧ Receiving light (front surface reflected light)
22‧‧‧投影系統 22‧‧‧Projection system
23‧‧‧光接收系統 23‧‧‧Light receiving system
θ‧‧‧入射角 Θ‧‧‧incident angle
Claims (10)
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JP2015253117A JP6682263B2 (en) | 2015-12-25 | 2015-12-25 | Detecting apparatus, exposure apparatus, and article manufacturing method |
JP2015-253117 | 2015-12-25 |
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JP2019032378A (en) * | 2017-08-04 | 2019-02-28 | 株式会社オーク製作所 | Substrate position detection device, exposure apparatus and method for detecting substrate position |
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JPH0922868A (en) * | 1995-07-06 | 1997-01-21 | Canon Inc | Projection exposure device and manufacturing method for semiconductor device using it |
KR100242983B1 (en) * | 1996-10-28 | 2000-02-01 | 김영환 | An auto-focusing system using double reflection |
JP2004273828A (en) | 2003-03-10 | 2004-09-30 | Nikon Corp | Method and device for surface position detection, focusing device, aligner, and manufacturing method for device |
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JP2009206373A (en) * | 2008-02-28 | 2009-09-10 | Canon Inc | Exposure system and method for manufacturing device |
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EP2128701A1 (en) * | 2008-05-30 | 2009-12-02 | ASML Netherlands BV | Method of determining defects in a substrate and apparatus for exposing a substrate in a lithographic process |
JP5198980B2 (en) * | 2008-09-02 | 2013-05-15 | 株式会社モリテックス | Optical anisotropy parameter measuring method and measuring apparatus |
JP2011226939A (en) | 2010-04-21 | 2011-11-10 | Hitachi High-Technologies Corp | Method and device for inspecting substrate |
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