TW201733935A - Glass substrate heat-processing method - Google Patents

Glass substrate heat-processing method Download PDF

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Publication number
TW201733935A
TW201733935A TW106105737A TW106105737A TW201733935A TW 201733935 A TW201733935 A TW 201733935A TW 106105737 A TW106105737 A TW 106105737A TW 106105737 A TW106105737 A TW 106105737A TW 201733935 A TW201733935 A TW 201733935A
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Taiwan
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glass substrate
cutting
end portion
heat
mother
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TW106105737A
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Chinese (zh)
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稲山尚利
川口貴弘
三成泰紀
吳昭霖
程致維
呂芳延
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日本電氣硝子股份有限公司
台灣電氣硝子股份有限公司
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Publication of TW201733935A publication Critical patent/TW201733935A/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B25/00Annealing glass products
    • C03B25/02Annealing glass products in a discontinuous way
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00Severing cooled glass
    • C03B33/02Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/023Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
    • C03B33/033Apparatus for opening score lines in glass sheets
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00Severing cooled glass
    • C03B33/08Severing cooled glass by fusing, i.e. by melting through the glass
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Laser Beam Processing (AREA)

Abstract

In this invention, the entirety of a glass substrate 2 having a thickness of 500 [mu]m or less is stacked onto a setter 1, and the glass substrate 2 is heat-processed in this state for the purpose of decreasing the heat-shrinking rate thereof. In this process, for the glass substrate 2, a substrate is used in which the edge portion strength when curved in such a manner that the front surface 2a side is convex and the edge portion strength when curved in such a manner that the back surface 2b side is convex are both 200 MPa or greater.

Description

玻璃基板的熱處理方法Glass substrate heat treatment method

本發明是有關於一種在使玻璃基板與托架(setter)重疊的狀態下,對玻璃基板實施用以使熱收縮率降低的熱處理的玻璃基板的熱處理方法。The present invention relates to a heat treatment method for a glass substrate which is subjected to heat treatment for lowering a heat shrinkage rate in a state in which a glass substrate and a setter are overlapped.

如眾所周知那樣,近年來,智慧型電話或平板型終端等行動終端正急速普及,用於其高性能化的技術開發正在推進。伴隨於此,對搭載於行動終端的液晶顯示器或有機電致發光(electroluminescence,EL)顯示器等平板顯示器(以下表述為FPD(flat panel display))而言,作為其性能之一,要求可顯示高精細圖像。As is well known, in recent years, mobile terminals such as smart phones and tablet terminals are rapidly spreading, and technology development for high performance is progressing. With this, a flat panel display (hereinafter referred to as an FPD (flat panel display)) such as a liquid crystal display or an organic electroluminescence (EL) display mounted on a mobile terminal is required to have a high display performance. Fine image.

在FPD的製造步驟中,通常,對作為其構成零件的玻璃基板的表面,執行將包含氧化銦錫(ITO)等的透明導電膜圖案形成的處理。此時,為了實現FPD的高精細化,需要在將玻璃基板暴露於高溫下的狀態下執行處理。因此,在以熱收縮率高的玻璃基板作為處理對象的情況下,有時會發生下述不良情況。In the manufacturing process of the FPD, generally, a process of forming a transparent conductive film pattern containing indium tin oxide (ITO) or the like is performed on the surface of the glass substrate as the constituent member. At this time, in order to achieve high definition of the FPD, it is necessary to perform processing in a state where the glass substrate is exposed to a high temperature. Therefore, when a glass substrate having a high heat shrinkage rate is used as a processing target, the following problems may occur.

即,因玻璃基板的相對於熱的尺寸穩定性低,故難以在基板形成如設計般的透明導電膜,有時所製造的FPD未發揮所需的高精細性。因此,為了避免此種不良情況的發生,要求在所述處理執行前,儘可能地降低玻璃基板的熱收縮率。That is, since the dimensional stability of the glass substrate with respect to heat is low, it is difficult to form a transparent conductive film as designed, and the manufactured FPD may not exhibit the required high definition. Therefore, in order to avoid the occurrence of such a problem, it is required to reduce the heat shrinkage rate of the glass substrate as much as possible before the process is performed.

此處,專利文獻1中揭示了一種用以使玻璃基板的熱收縮率降低的熱處理方法。該文獻所揭示的方法中,在高溫的緩冷爐內,在使玻璃基板整體與托架(該文獻中為耐熱性玻璃陶瓷板)重疊的狀態下,對玻璃基板實施熱處理。另外,該文獻中例示了一種板厚為1 mm的基板來作為成為熱處理對象的玻璃基板。Here, Patent Document 1 discloses a heat treatment method for lowering the heat shrinkage rate of a glass substrate. In the method disclosed in this document, the glass substrate is subjected to heat treatment in a state where the entire glass substrate and the carrier (the heat-resistant glass ceramic plate in this document) are overlapped in a high-temperature slow cooling furnace. Further, in this document, a substrate having a thickness of 1 mm is exemplified as a glass substrate to be subjected to heat treatment.

[先前技術文獻] [專利文獻] [專利文獻1] 日本專利特開平5-330835號公報[Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent Laid-Open No. Hei 5-330835

[發明所欲解決之課題] 然而,在利用所述方法對玻璃基板實施熱處理的情況下,會產生如下應解決的問題。[Problems to be Solved by the Invention] However, in the case where the glass substrate is subjected to heat treatment by the above method, the following problems are solved.

即,關於FPD所要求的性能,除可顯示高精細的圖像外,亦要求薄型且輕量。因此,關於作為FPD的構成零件的玻璃基板,現狀為其薄板化正在推進。然而,在對已薄板化至板厚為500 μm以下的玻璃基板利用所述方法實施熱處理的情況下,存在托架上的玻璃基板容易以端部為起點而破損的問題。That is, regarding the performance required for the FPD, in addition to displaying a high-definition image, it is also required to be thin and lightweight. Therefore, as for the glass substrate which is a component of the FPD, the thinning of the glass substrate is progressing. However, when the heat treatment is performed on the glass substrate which has been thinned to a thickness of 500 μm or less by the above method, there is a problem in that the glass substrate on the carrier is easily broken at the end portion.

另外,設想所述問題因下述(A)、(B)兩點而產生。(A)在熱處理後托架與玻璃基板冷卻時,有時兩者不可避免地密接而成為相互固定的狀態。(B)兩者冷卻時,玻璃基板的表層部與內部之間產生溫差,從而在基板內產生熱膨脹差。設想因上述兩點,藉由在固定於托架的狀態下的玻璃基板內產生熱膨脹差,而應力作用於基板,該應力會以強度弱的端部為起點導致基板發生破損。Further, it is assumed that the problem is caused by two points (A) and (B) below. (A) When the carrier and the glass substrate are cooled after the heat treatment, the two may inevitably adhere to each other and be in a state of being fixed to each other. (B) When both are cooled, a temperature difference occurs between the surface layer portion of the glass substrate and the inside, and a difference in thermal expansion occurs in the substrate. It is assumed that due to the above two points, a difference in thermal expansion occurs in the glass substrate fixed in the bracket, and stress acts on the substrate, and the stress causes the substrate to be damaged from the end portion having weak strength as a starting point.

基於所述情況而完成的本發明以如下為技術性課題,即,對板厚為500 μm以下的玻璃基板,在與托架重疊的狀態下實施用以使熱收縮率降低的熱處理時,防止基板的破損。The present invention has been made in view of the above-described problems, that is, a glass substrate having a thickness of 500 μm or less is subjected to heat treatment for reducing the heat shrinkage rate in a state of being overlapped with the carrier, and is prevented. Damage to the substrate.

[解決課題之手段] 為了解決所述課題而創作的本發明為一種玻璃基板的熱處理方法,在使板厚為500 μm以下的玻璃基板整體與托架重疊的狀態下,對玻璃基板實施用以使熱收縮率降低的熱處理,所述玻璃基板的熱處理方法的特徵在於:作為玻璃基板,使用表面側以凸出的方式彎曲的情況下的端部強度、與背面側以凸出的方式彎曲的情況下的端部強度均為200 MPa以上的基板。[Means for Solving the Problem] The present invention has been made in order to solve the above problems, and is a method for heat-treating a glass substrate. The glass substrate is used in a state in which the entire glass substrate having a thickness of 500 μm or less is overlapped with the carrier. In the heat treatment method for reducing the heat shrinkage rate, the glass substrate heat treatment method is characterized in that the glass substrate is bent at the end portion when the surface side is convexly curved and the back surface side is convex. In the case where the end strength is 200 MPa or more.

該方法中,關於成為熱處理對象的玻璃基板,使用在使表面側與背面側中的任一者以凸出的方式彎曲的情況下,其端部強度均為200 MPa以上的玻璃基板。即,使用具備儘管板厚薄至500 μm以下,亦可充分防止以端部為起點的破損的端部強度的玻璃基板。藉此,即便在使玻璃基板整體與托架重疊的狀態下,實施用以使熱收縮率降低的熱處理,亦能夠防止伴隨熱處理而玻璃基板破損之類的事態的發生。In the method, the glass substrate to be heat-treated is a glass substrate having an end portion strength of 200 MPa or more in a case where either one of the front side and the back side is curved. In other words, a glass substrate having a thickness at which the end portion is broken from the end portion can be sufficiently prevented even when the thickness is as small as 500 μm or less. By this means, even when the entire glass substrate is overlapped with the carrier, heat treatment for lowering the heat shrinkage rate is performed, and it is possible to prevent the occurrence of a situation in which the glass substrate is damaged by the heat treatment.

所述方法中,玻璃基板的板厚較佳為300 μm以下。In the method, the thickness of the glass substrate is preferably 300 μm or less.

對板厚為300 μm以下的玻璃基板,例如,難以藉由研削加工而將端部所包含的微裂紋去除,而實現端部強度的提高。其原因在於,由於玻璃基板的板厚極薄,故因伴隨研削加工而作用於端部的力導致玻璃基板破損的可能性高。然而,本發明的方法中,使用具備充分的端部強度的玻璃基板來作為成為熱處理對象的玻璃基板,因而無須對其端部重新實現強度的提高,當然亦無須進行研削加工。因此,若在玻璃基板的板厚為300 μm以下的情況下,應用本發明的方法,則可更有效地靈活應用其效果。For a glass substrate having a thickness of 300 μm or less, for example, it is difficult to remove microcracks included in the end portion by grinding, and the strength of the end portion can be improved. This is because the thickness of the glass substrate is extremely thin, so that the force acting on the end portion due to the grinding process is likely to cause damage to the glass substrate. However, in the method of the present invention, a glass substrate having sufficient end strength is used as the glass substrate to be heat-treated, so that it is not necessary to re-strengthen the strength of the end portion, and of course, no grinding processing is required. Therefore, when the thickness of the glass substrate is 300 μm or less, the effect of the method of the present invention can be applied more effectively and flexibly.

所述方法中,較佳為玻璃基板的端部為在將玻璃基板從母玻璃基板切下時,藉由雷射切割將母玻璃基板切割而形成的切割端部。In the above method, it is preferable that the end portion of the glass substrate is a cut end portion formed by cutting the mother glass substrate by laser cutting when the glass substrate is cut out from the mother glass substrate.

利用雷射切割而形成的切割端部的端部強度能夠設為200 MPa以上。因此,只要玻璃基板的端部為利用雷射切割而形成的切割端部,則對於防止玻璃基板的破損而言較佳。The end strength of the cut end portion formed by laser cutting can be set to 200 MPa or more. Therefore, as long as the end portion of the glass substrate is a cut end portion formed by laser cutting, it is preferable to prevent breakage of the glass substrate.

所述方法中,較佳為,使玻璃基板的表面與背面中的、未殘存作為母玻璃基板的切割起點的初始裂紋的痕跡的面與托架接觸。In the above method, it is preferable that the surface of the surface and the back surface of the glass substrate that does not remain as a trace of the initial crack of the cutting starting point of the mother glass substrate is in contact with the carrier.

玻璃基板中,殘存作為切割起點的初始裂紋的痕跡的部位(端部上的部位)的強度必然低於其他部位。而且,玻璃基板的表面與背面中的與托架接觸側的面,較之不接觸側的面,更容易伴隨熱處理而作用大的應力。因此,只要使未殘存初始裂紋的痕跡的面與托架接觸,使殘存痕跡的面不與托架接觸,則能夠儘可能地排除玻璃基板以強度低的初始裂紋的痕跡為起點而破損的可能性,從而可更確實地防止玻璃基板的破損。In the glass substrate, the portion (the portion on the end portion) where the trace of the initial crack as the starting point of the cutting remains is inevitably lower than the other portions. Further, the surface on the surface of the glass substrate and the surface on the back surface which is in contact with the carrier is more likely to exert a large stress accompanying the heat treatment than the surface on the side not contacting the side. Therefore, if the surface of the trace where the initial crack does not remain is brought into contact with the carrier, and the surface of the residual trace is not in contact with the carrier, the possibility that the glass substrate is broken as a starting point from the initial crack of the low strength can be excluded as much as possible. Therefore, the damage of the glass substrate can be prevented more reliably.

所述方法中,較佳為作為玻璃基板,使用通過母玻璃基板的切割而形成四邊的每一邊的矩形基板,並且使初始裂紋的痕跡在玻璃基板僅殘存一個。In the above method, it is preferable to use a rectangular substrate which is formed by cutting the mother glass substrate to form each of the four sides as the glass substrate, and to leave only one trace of the initial crack on the glass substrate.

據此,矩形的玻璃基板中的四邊分別成為利用雷射切割形成的切割端部,並且在玻璃基板殘存的初始裂紋的痕跡僅抑制為一個,因此可更確實地防止玻璃基板的破損。According to this, the four sides of the rectangular glass substrate are cut end portions formed by laser cutting, and the traces of the initial cracks remaining on the glass substrate are suppressed to only one, so that the glass substrate can be more reliably prevented from being damaged.

所述方法中,玻璃基板的端部亦可為:在將玻璃基板從母玻璃基板切下時,藉由雷射熔斷將母玻璃基板熔斷而形成的熔斷端部。In the above method, the end portion of the glass substrate may be a fuse end portion formed by fusing the mother glass substrate by laser fusing when the glass substrate is cut out from the mother glass substrate.

利用雷射熔斷形成的熔斷端部的端部強度能夠設為200 MPa以上。因此,只要玻璃基板的端部為利用雷射熔斷形成的熔斷端部,則對於防止玻璃基板的破損而言較佳。The end strength of the fusing end portion formed by the laser fusing can be set to 200 MPa or more. Therefore, as long as the end portion of the glass substrate is a fusing end portion formed by laser fusing, it is preferable to prevent breakage of the glass substrate.

所述方法中,玻璃基板的端部亦可為在將玻璃基板從母玻璃基板切下時,藉由執行沿著切斷預定線將母玻璃基板切斷的切斷步驟而形成的切斷端部,切斷步驟亦可包括:彎曲步驟,使母玻璃基板中的包含切斷預定線的部位彎曲;以及裂紋形成步驟,從母玻璃基板的凸彎曲面側,在切斷預定線上形成成為切斷起點的裂紋。In the above method, the end portion of the glass substrate may be a cut end formed by performing a cutting step of cutting the mother glass substrate along the line to cut when the glass substrate is cut from the mother glass substrate. The cutting step may further include: a bending step of bending a portion of the mother glass substrate including the planned cutting line; and a crack forming step of forming a cut from the convex curved surface side of the mother glass substrate Crack at the starting point.

利用切斷步驟的執行而形成的切斷端部的端部強度能夠設為200 MPa以上。因此,只要玻璃基板的端部為此種切斷端部,則對於防止玻璃基板的破損而言較佳。The strength of the end portion of the cut end portion formed by the execution of the cutting step can be set to 200 MPa or more. Therefore, as long as the end portion of the glass substrate is such a cut end portion, it is preferable to prevent breakage of the glass substrate.

所述方法中,較佳為,使玻璃基板的表面與背面中的、以凸出的方式彎曲的情況下,端部強度更高的面與托架接觸。In the above method, when the surface of the glass substrate and the back surface are bent in a convex manner, the surface having a higher end strength is preferably in contact with the carrier.

如所述那樣,玻璃基板的表面與背面中的與托架接觸側的面,較之不接觸側的面,更容易伴隨熱處理而作用大的應力。因此,若使以凸出的方式彎曲的情況下端部強度更高的面,即,可能使玻璃基板破損的缺陷更少的面與托架接觸,則可更確實地防止玻璃基板的破損。As described above, the surface on the side of the glass substrate and the surface on the back surface that is in contact with the carrier is more likely to exert a large stress accompanying the heat treatment than the surface on the non-contact side. Therefore, when the surface having a higher end strength when the film is bent is protruded, that is, the surface having less defects in which the glass substrate is broken can be brought into contact with the carrier, the damage of the glass substrate can be more reliably prevented.

[發明的效果] 本發明中,作為成為熱處理對象的玻璃基板,而使用如下玻璃基板,即,具備即便板厚薄至500 μm以下,亦可充分防止以端部為起點的破損的端部強度。藉此,對板厚為500 μm以下的玻璃基板,在與托架重疊的狀態下實施用以使熱收縮率降低的熱處理時,能夠防止基板的破損。[Effects of the Invention] In the present invention, as the glass substrate to be subjected to the heat treatment, the glass substrate is used, that is, the thickness of the end portion which is damaged at the end portion can be sufficiently prevented even when the thickness is as small as 500 μm or less. In this way, when the heat treatment for lowering the heat shrinkage rate is performed on the glass substrate having a thickness of 500 μm or less, the substrate can be prevented from being damaged.

以下,參照隨附的圖式對本發明的實施形態的玻璃基板的熱處理方法進行說明。Hereinafter, a heat treatment method of a glass substrate according to an embodiment of the present invention will be described with reference to the accompanying drawings.

如圖1所示,本發明的實施形態的玻璃基板的熱處理方法為如下方法,在將分別支持於托架1的多塊玻璃基板2在熱處理爐3內上下多層配置的狀態下,對各玻璃基板2實施用以使熱收縮率降低的熱處理。該熱處理方法中,作為各玻璃基板2,使用如下基板,即,板厚為500 μm以下,並且表面2a側以凸出的方式彎曲的情況下的端部強度(以下表述為表面凸彎曲時端部強度)、與背面2b側以凸出的方式彎曲的情況下的端部強度(以下表述為背面凸彎曲時端部強度)均為200 MPa以上。As shown in FIG. 1 , the heat treatment method of the glass substrate of the embodiment of the present invention is a method in which a plurality of glass substrates 2 supported by the carrier 1 are placed in a plurality of layers in the heat treatment furnace 3 in a plurality of layers. The substrate 2 is subjected to a heat treatment for lowering the heat shrinkage rate. In the heat treatment method, as each of the glass substrates 2, a substrate having a thickness of 500 μm or less and a surface of the surface 2a bent in a convex manner is used (hereinafter, the surface is convexly curved) The strength of the end portion when the back surface 2b side is convexly curved (hereinafter, the end portion strength when the back surface is convexly curved) is 200 MPa or more.

此處,所述熱處理方法中,「表面凸彎曲時端部強度與背面凸彎曲時端部強度均為200 MPa以上的玻璃基板2」是指,根據執行以下的「切出步驟」~「平均端部強度算出步驟」的各步驟的結果,視作表面凸彎曲時端部強度與背面凸彎曲時端部強度均為200 MPa以上的玻璃基板2。Here, in the heat treatment method, "the glass substrate 2 having an end portion strength at the time of surface convex bending and an end portion strength at a back surface convex bending of 200 MPa or more" means that the following "cutting step" to "average" are performed. As a result of each step of the end strength calculation step, the glass substrate 2 having an end strength at the time of surface convex bending and an end strength at the time of back convex bending was 200 MPa or more.

「切出步驟」:獲得從同一製造條件下製造的多塊母玻璃基板4中,利用同一切斷條件而切下的多塊玻璃基板2(圖2、圖3a~圖3f)。 「樣品採取步驟」:從由切出步驟獲得的多塊玻璃基板2中,隨機地採取40塊作為用於兩點彎曲試驗的樣品玻璃基板2X。 「試驗步驟」:對樣品採取步驟中所採取的40塊樣品玻璃基板2X的一半(以下表述為樣品A群),使其各自的表面2Xa側以凸出的方式彎曲而進行兩點彎曲試驗,並且對剩餘的一半(以下表述為樣品B群),使其各自的背面2Xb側以凸出的方式彎曲而進行兩點彎曲試驗(圖4a、圖4b)。 「平均端部強度算出步驟」:對於樣品A群及樣品B群的各者,僅抽出兩點彎曲試驗中以端部2Xc為起點發生破損的樣品玻璃基板2X,並且算出根據兩點彎曲試驗判明的各樣品玻璃基板2X的端部強度的平均值(以下分別表述為平均端部強度A、平均端部強度B)。 執行以上各步驟,在平均端部強度A與平均端部強度B均為200 MPa以上的情況下,對樣品採取步驟中未作為樣品玻璃基板2X而採取的玻璃基板2的各者,視作其表面凸彎曲時端部強度與背面凸彎曲時端部強度均為200 MPa以上者。"Cutting step": A plurality of glass substrates 2 (Fig. 2, Figs. 3a to 3f) cut out from the plurality of mother glass substrates 4 manufactured under the same manufacturing conditions and cut by the same cutting conditions are obtained. "Sample taking step": From the plurality of glass substrates 2 obtained by the cutting step, 40 pieces were randomly taken as the sample glass substrate 2X for the two-point bending test. "Testing procedure": half of the 40 sample glass substrates 2X (hereinafter referred to as sample group A) taken in the step of the sample, and the respective surface 2Xa sides are bent in a convex manner to perform a two-point bending test. Further, the remaining half (hereinafter referred to as sample B group) was bent in a convex manner on the respective back surface 2Xb sides to perform a two-point bending test (Fig. 4a, Fig. 4b). "Average end strength calculation step": For each of the sample A group and the sample B group, only the sample glass substrate 2X which was broken by the end portion 2Xc as a starting point in the two-point bending test was extracted, and the calculation was based on the two-point bending test. The average value of the end strengths of the respective sample glass substrates 2X (hereinafter referred to as the average end strength A and the average end strength B). When the average end strength A and the average end strength B are both 200 MPa or more, each of the glass substrates 2 which are not taken as the sample glass substrate 2X in the sample taking step is regarded as When the surface is convexly curved, the strength of the end portion and the strength of the end portion when the back surface is convexly curved are both 200 MPa or more.

以下,對所述切出步驟~平均端部強度算出步驟的各步驟進行詳細敘述。Hereinafter, each step of the cutting step to the average end portion strength calculating step will be described in detail.

<切出步驟> 切出步驟中,只要藉由將多塊母玻璃基板4的各者在同一切斷條件下進行切斷,而切下玻璃基板2,則可採用各種切斷方法。其中,限於將之後的平均端部強度算出步驟中算出的平均端部強度A及平均端部強度B,均能夠設為200 MPa以上的切斷方法。滿足該條件的切斷方法將於以後例示。而且,只要以同一形狀及同一尺寸切下,則可將切下的玻璃基板2設為任意的形狀及尺寸。本實施形態中,以如下情況為例進行說明,即,藉由雷射切割將各母玻璃基板4切斷,並從各母玻璃基板4切下矩形的玻璃基板2,由此執行切出步驟。<Cutting Step> In the cutting step, various cutting methods can be employed by cutting the glass substrate 2 by cutting each of the plurality of mother glass substrates 4 under the same cutting conditions. However, it is limited to a cutting method in which the average end strength A and the average end strength B calculated in the subsequent average end strength calculation step are both 200 MPa or more. A cutting method that satisfies this condition will be exemplified later. Further, the cut glass substrate 2 can have any shape and size as long as it is cut in the same shape and the same size. In the present embodiment, a description will be given of a case where the mother glass substrate 4 is cut by laser cutting, and the rectangular glass substrate 2 is cut out from each mother glass substrate 4, thereby performing a cutting step. .

以下,對用於母玻璃基板4的雷射切割的切割裝置5進行說明。Hereinafter, the cutting device 5 for laser cutting of the mother glass substrate 4 will be described.

如圖2所示,切割裝置5具備:能夠在從下方支持母玻璃基板4的狀態下水平移動的加工台6,對支持於加工台6的母玻璃基板4照射雷射7的雷射照射器8,以及對母玻璃基板4噴射冷媒9的冷媒噴射噴嘴10。As shown in FIG. 2, the cutting device 5 is provided with a processing table 6 that can horizontally move in a state in which the mother glass substrate 4 is supported from below, and a laser irradiator that irradiates the mother glass substrate 4 supported on the processing table 6 with the laser beam 7 8. The refrigerant injection nozzle 10 that injects the refrigerant 9 to the mother glass substrate 4.

加工台6能夠沿著圖2所示的X方向及與X方向正交的Y方向移動。雷射照射器8以固定於定點的狀態設置,伴隨加工台6在X方向或Y方向上移動,而沿著母玻璃基板4的切割預定線11照射雷射7,由此在母玻璃基板4形成利用雷射7的熱加熱的加熱部12(圖2中例示了使加工台6在X方向上移動的情況)。冷媒噴射噴嘴10與雷射照射器8同樣地,以固定於定點的狀態設置,將冷媒9朝向加熱部12噴射,而將加熱部12的一部分冷卻,由此在母玻璃基板4形成冷卻部13。The processing table 6 is movable in the X direction shown in FIG. 2 and the Y direction orthogonal to the X direction. The laser illuminator 8 is disposed in a state of being fixed at a fixed point, and the laser beam 7 is irradiated along the planned cutting line 11 of the mother glass substrate 4 as the processing table 6 moves in the X direction or the Y direction, thereby being on the mother glass substrate 4 The heating unit 12 that heats the laser 7 is formed (the case where the processing table 6 is moved in the X direction is illustrated in FIG. 2). Similarly to the laser illuminator 8, the refrigerant jetting nozzle 10 is provided in a state of being fixed at a fixed point, and ejects the refrigerant 9 toward the heating unit 12, and cools a part of the heating unit 12, thereby forming a cooling portion 13 on the mother glass substrate 4. .

該切割裝置5利用因鄰接而形成的加熱部12與冷卻部13的溫差所產生的熱應力,以形成於母玻璃基板4的端部4a的初始裂紋14為起點,沿著切割預定線11逐漸形成切割部15,由此將母玻璃基板4切割。The cutting device 5 uses the thermal stress generated by the temperature difference between the heating portion 12 and the cooling portion 13 which are formed adjacent to each other, and starts from the initial crack 14 formed on the end portion 4a of the mother glass substrate 4, along the planned cutting line 11. The cutting portion 15 is formed, thereby cutting the mother glass substrate 4.

此處,在從母玻璃基板4切下的玻璃基板2的形狀為矩形的情況下,該玻璃基板2的尺寸較佳為300 mm見方以上,更佳為400 mm見方以上,進而更佳為500 mm見方以上,最佳為600 mm見方以上。Here, in the case where the shape of the glass substrate 2 cut from the mother glass substrate 4 is a rectangle, the size of the glass substrate 2 is preferably 300 mm square or more, more preferably 400 mm square or more, and still more preferably 500. More than mm square, the best is 600 mm square.

而且,玻璃基板2的板厚較佳為300 μm以下,更佳為200 μm以下,進而更佳為150 μm以下,最佳為100 μm以下。玻璃基板2的板厚越小,對將玻璃基板2作為構成零件的製品(例如FPD)的薄型化、輕量化的貢獻度越大,並且能夠賦予可撓性。然而,若玻璃基板2的板厚過小,則無法確保玻璃基板2所需的最低限度的強度。因此,玻璃基板2的板厚較佳為5 μm以上。Further, the thickness of the glass substrate 2 is preferably 300 μm or less, more preferably 200 μm or less, still more preferably 150 μm or less, and most preferably 100 μm or less. The smaller the thickness of the glass substrate 2, the greater the contribution to the reduction and weight reduction of the product (for example, FPD) in which the glass substrate 2 is a component, and the flexibility can be imparted. However, if the thickness of the glass substrate 2 is too small, the minimum strength required for the glass substrate 2 cannot be ensured. Therefore, the thickness of the glass substrate 2 is preferably 5 μm or more.

進而,玻璃基板2的應變點較佳為600℃以上,更佳為650℃以上,進而更佳為680℃以上,最佳為700℃以上。另外,此處提及的應變點是基於美國材料與試驗協會(American Society for Testing and Materials,ASTM)C336規定的方法測定出的值。Further, the strain point of the glass substrate 2 is preferably 600 ° C or higher, more preferably 650 ° C or higher, still more preferably 680 ° C or higher, and most preferably 700 ° C or higher. In addition, the strain point referred to herein is a value measured based on the method specified by American Society for Testing and Materials (ASTM) C336.

具有所述尺寸、板厚及應變點的玻璃基板2例如可包含矽酸鹽玻璃、二氧化矽玻璃、硼矽玻璃、鈉玻璃、無鹼玻璃等。本實施形態中,使用包含所述各種玻璃中最不易產生經年劣化的無鹼玻璃的玻璃基板2。此處,無鹼玻璃是指實質不含鹼成分(鹼金屬氧化物)的玻璃,具體來說,是指鹼成分的含量為3000 ppm以下的玻璃。另外,鹼成分的含量較佳為1000 ppm以下,更佳為500 ppm以下,最佳為300 ppm以下。The glass substrate 2 having the size, the plate thickness, and the strain point may include, for example, bismuth silicate glass, cerium oxide glass, borosilicate glass, soda glass, alkali-free glass, or the like. In the present embodiment, a glass substrate 2 containing the alkali-free glass which is less likely to cause deterioration over the years is used. Here, the alkali-free glass means a glass which does not substantially contain an alkali component (alkali metal oxide), and specifically refers to a glass having an alkali component content of 3,000 ppm or less. Further, the content of the alkali component is preferably 1000 ppm or less, more preferably 500 ppm or less, and most preferably 300 ppm or less.

以下,參照圖3a~圖3f對使用所述切割裝置5從各母玻璃基板4切下玻璃基板2的形態進行說明。另外,圖3a~圖3f中,省略切割裝置5所具備的加工台6、雷射照射器8及冷媒噴射噴嘴10的圖示。Hereinafter, an aspect in which the glass substrate 2 is cut out from each mother glass substrate 4 by using the dicing apparatus 5 will be described with reference to FIGS. 3a to 3f. In addition, in FIGS. 3a to 3f, illustration of the processing table 6, the laser illuminator 8, and the refrigerant injection nozzle 10 which are provided in the cutting device 5 is abbreviate|omitted.

如圖3a所示,母玻璃基板4中包含作為切下對象的玻璃基板2(施加影線的部位)。玻璃基板2為具備一對長邊2c、長邊2d與一對短邊2e、短邊2f的四邊的矩形的基板。首先,如圖3b所示,相對於母玻璃基板4的端部4a形成第一初始裂紋16,以該第一初始裂紋16為起點,在沿著玻璃基板2的長邊2c延伸的第一切割預定線17上逐漸形成第一切割部18,由此將四邊中的長邊2c切下。As shown in FIG. 3a, the mother glass substrate 4 includes a glass substrate 2 (a portion to which a hatching is applied) as a target to be cut. The glass substrate 2 is a rectangular substrate having a pair of long sides 2c, long sides 2d, a pair of short sides 2e, and short sides 2f. First, as shown in FIG. 3b, a first initial crack 16 is formed with respect to the end portion 4a of the mother glass substrate 4, with the first initial crack 16 as a starting point, and a first cut extending along the long side 2c of the glass substrate 2. The first cutting portion 18 is gradually formed on the predetermined line 17, thereby cutting the long side 2c of the four sides.

接下來,如圖3c所示,相對於母玻璃基板4的端部4a形成第二初始裂紋19,以該第二初始裂紋19為起點,在沿著玻璃基板2的短邊2e延伸的第二切割預定線20上逐漸形成第二切割部21,由此切下短邊2e。另外,伴隨短邊2e的切下,從母玻璃基板4將包含第一初始裂紋16的痕跡的部位去除。接下來,如圖3d所示,相對於母玻璃基板4的端部4a形成第三初始裂紋22,以該第三初始裂紋22為起點,在沿著玻璃基板2的短邊2f延伸的第三切割預定線23上逐漸形成第三切割部24,由此將短邊2f切下。Next, as shown in FIG. 3c, a second initial crack 19 is formed with respect to the end portion 4a of the mother glass substrate 4, with the second initial crack 19 as a starting point, and a second extending along the short side 2e of the glass substrate 2. The second cutting portion 21 is gradually formed on the cutting planned line 20, whereby the short side 2e is cut. Further, the portion including the trace of the first initial crack 16 is removed from the mother glass substrate 4 as the short side 2e is cut. Next, as shown in FIG. 3d, a third initial crack 22 is formed with respect to the end portion 4a of the mother glass substrate 4, with the third initial crack 22 as a starting point, and a third extending along the short side 2f of the glass substrate 2. The third cutting portion 24 is gradually formed on the cutting planned line 23, thereby cutting the short side 2f.

最後,如圖3e所示,相對於母玻璃基板4的端部4a形成第四初始裂紋25,以該第四初始裂紋25為起點,在沿著玻璃基板2的長邊2d延伸的第四切割預定線26上逐漸形成第四切割部27,將四邊中的最後殘留的長邊2d切下。當長邊2d的切下完成時,如圖3f所示,利用母玻璃基板4的切割將形成著四邊的各邊的玻璃基板2切下。即,該玻璃基板2的端部2g為利用雷射切割形成的切割端部。另外,伴隨長邊2d的切下,從母玻璃基板4將包含第二初始裂紋19的痕跡及第三初始裂紋22的痕跡的部位去除。藉此,在玻璃基板2,僅殘留第一初始裂紋16的痕跡~第四初始裂紋25的痕跡中的第四初始裂紋25這一個痕跡。Finally, as shown in FIG. 3e, a fourth initial crack 25 is formed with respect to the end portion 4a of the mother glass substrate 4, with the fourth initial crack 25 as a starting point, and a fourth cut extending along the long side 2d of the glass substrate 2. The fourth cutting portion 27 is gradually formed on the predetermined line 26, and the last remaining long side 2d among the four sides is cut. When the cutting of the long side 2d is completed, as shown in FIG. 3f, the glass substrate 2 on each side of which the four sides are formed is cut by the cutting of the mother glass substrate 4. That is, the end portion 2g of the glass substrate 2 is a cut end portion formed by laser cutting. Further, the portion including the trace of the second initial crack 19 and the trace of the third initial crack 22 is removed from the mother glass substrate 4 with the cutting of the long side 2d. Thereby, only one trace of the fourth initial crack 25 among the traces of the first initial crack 16 to the fourth initial crack 25 remains in the glass substrate 2.

藉由對多塊母玻璃基板4的各者依次執行從所述母玻璃基板4切下玻璃基板2,而獲得同一切斷條件下切下的多塊玻璃基板2。藉由以上,切出步驟完成。By sequentially cutting the glass substrate 2 from the mother glass substrate 4 for each of the plurality of mother glass substrates 4, a plurality of glass substrates 2 cut under the same cutting conditions are obtained. With the above, the cutting step is completed.

<樣品採取步驟> 樣品採取步驟中,從多塊玻璃基板2中採取40塊作為樣品玻璃基板2X。將該些40塊樣品玻璃基板2X中的一半作為樣品A群,並且將剩餘的一半作為樣品B群。<Sample Taking Step> In the sample taking step, 40 pieces were taken from the plurality of glass substrates 2 as the sample glass substrate 2X. One half of the 40 sample glass substrates 2X was taken as the sample group A, and the remaining half was taken as the sample group B.

<試驗步驟> 如圖4a所示,關於屬於樣品A群的樣品玻璃基板2X的各者,使其表面2Xa側(第四初始裂紋25的痕跡未殘存的面側)以凸出的方式呈U字狀彎曲而進行試驗。另一方面,如圖4b所示,關於屬於樣品B群的樣品玻璃基板2X的各者,使其背面2Xb側(第四初始裂紋25的痕跡殘存的面側)以凸出的方式呈U字狀彎曲而進行試驗。<Testing procedure> As shown in FIG. 4a, each of the sample glass substrates 2X belonging to the sample A group has a surface 2Xa side (a surface side where the trace of the fourth initial crack 25 does not remain) is U in a convex manner. The test was performed by bending the characters. On the other hand, as shown in FIG. 4b, each of the sample glass substrates 2X belonging to the sample B group has a U-shaped convex side on the back surface 2Xb side (the surface side on which the traces of the fourth initial crack 25 remain). The test was performed by bending.

具體來說,在由上下一對板體28、板體28夾著樣品玻璃基板2X的狀態下,使上方側的板體28以50 mm/min的速度下降,由此逐漸增大樣品玻璃基板2X的彎曲的部位的曲率。上方側的板體28的下降繼續進行直至樣品玻璃基板2X破損。依次對屬於樣品A群的全部樣品玻璃基板2X及屬於樣品B群的全部樣品玻璃基板2X進行所述兩點彎曲試驗。根據以上,試驗步驟完成。Specifically, in a state in which the sample glass substrate 2X is sandwiched between the pair of upper and lower plates 28 and the plate body 28, the upper plate body 28 is lowered at a speed of 50 mm/min, thereby gradually increasing the sample glass substrate. The curvature of the 2X curved part. The lowering of the upper body 28 is continued until the sample glass substrate 2X is broken. The two-point bending test was performed on all of the sample glass substrates 2X belonging to the sample A group and all the sample glass substrates 2X belonging to the sample B group in this order. According to the above, the test procedure is completed.

另外,本實施形態中,以各樣品玻璃基板2X的一對長邊2c、長邊2d與一對短邊2e、短邊2f中的一對長邊2c、長邊2d彎曲的方式進行試驗。其原因在於,較之使一對短邊2e、短邊2f彎曲的情況,使一對長邊2c、長邊2d彎曲的情況下更容易維持樣品玻璃基板2X的曲率,從而可準確地掌握端部強度。因此,作為本實施形態的變形例,在使切出步驟中切下的玻璃基板2的形狀與矩形不同的情況下或切出步驟中利用與雷射切割不同的切斷方法切下玻璃基板2的情況下,為了準確地掌握端部強度,較佳為以容易利用一對板體28、板體28固定樣品玻璃基板2X的方式,使樣品玻璃基板2X彎曲而進行試驗。In the present embodiment, the test was performed such that the pair of long sides 2c and the long sides 2d of the sample glass substrate 2X and the pair of short sides 2e and the pair of long sides 2c and the long sides 2d of the short sides 2f were bent. This is because the curvature of the sample glass substrate 2X is more easily maintained when the pair of long sides 2c and the long sides 2d are curved than when the pair of short sides 2e and short sides 2f are bent, so that the ends can be accurately grasped. Strength. Therefore, as a modification of the present embodiment, when the shape of the glass substrate 2 cut in the cutting step is different from the rectangular shape or the cutting step, the glass substrate 2 is cut by a cutting method different from laser cutting. In order to accurately grasp the end strength, it is preferable to test the sample glass substrate 2X by bending the sample glass substrate 2X so that the pair of the plate body 28 and the plate body 28 are easily fixed.

<平均端部強度算出步驟> 平均端部強度算出步驟中,首先,對樣品A群及樣品B群的各者,僅抽出因兩點彎曲試驗而破損的樣品玻璃基板2X中的、以端部2Xc為起點而破損的樣品玻璃基板2X。即,僅抽出以一對長邊2c、長邊2d中的任一個為起點而破損的樣品玻璃基板2X。<Average End Strength Calculation Step> In the average end portion strength calculation step, first, only the sample glass group 2X that was damaged by the two-point bending test was extracted for each of the sample A group and the sample B group. 2Xc is the sample glass substrate 2X damaged by the starting point. In other words, only the sample glass substrate 2X which is broken by the pair of the long side 2c and the long side 2d as a starting point is extracted.

接下來,對樣品A群及樣品B群的各者,根據下述式1(參考文獻:S.T.古拉迪(Gulati),SID 11 摘要,652)算出所抽出的樣品玻璃基板2X的各者中的端部強度σ。另外,式1中,E表示樣品玻璃基板2X的楊氏模量,t表示樣品玻璃基板2X的板厚,D表示樣品玻璃基板2X以端部2Xc為起點破損時的一對板體28、板體28的間隔。Next, each of the sample A group and the sample B group is calculated from each of the extracted sample glass substrates 2X according to the following formula 1 (reference: ST Gulati, SID 11 abstract, 652). End strength σ. Further, in Formula 1, E represents the Young's modulus of the sample glass substrate 2X, t represents the thickness of the sample glass substrate 2X, and D represents a pair of plates 28 and plates when the sample glass substrate 2X is broken at the end 2Xc as a starting point. The spacing of the bodies 28.

σ=1.198[E・t/(D-t)]…(式1)σ=1.198[E・t/(D-t)]...(Formula 1)

最後,藉由對樣品A群及樣品B群的各者,算出根據所述式1算出的端部強度σ的平均值,而算出樣品A群中的作為端部強度σ的平均值的平均端部強度A及樣品B群中的作為端部強度σ的平均值的平均端部強度B。根據以上,平均端部強度算出步驟完成。Finally, the average value of the end portion strength σ calculated from the above formula 1 is calculated for each of the sample group A and the sample group B, and the average end of the average value of the end portion strength σ in the sample group A is calculated. The average end strength B as the average value of the end strengths σ in the portion strength A and the sample B group. According to the above, the average end strength calculation step is completed.

另外,在平均端部強度A與平均端部強度B均為200 MPa以上的情況下,對多塊玻璃基板2中的、未在樣品採取步驟中作為樣品玻璃基板2X而採取的各玻璃基板2,可視作其表面凸彎曲時端部強度與背面凸彎曲時端部強度均為200 MPa以上是基於以下的理由。即,其原因在於,兩點彎曲試驗中破損的樣品玻璃基板2X與成為熱處理對象的玻璃基板2是從利用彼此相同的製造條件製造的各母玻璃基板4利用同一切斷條件而切下的基板彼此,從而可視作處於大致均等狀態的基板彼此。Further, when the average end strength A and the average end strength B are both 200 MPa or more, each of the plurality of glass substrates 2 is taken as the sample glass substrate 2X in the sample taking step. It is considered that the end strength of the surface convex bending and the end strength of the back convex bending are both 200 MPa or more for the following reasons. In other words, the sample glass substrate 2X that has been damaged in the two-point bending test and the glass substrate 2 that is to be heat-treated are the substrates that are cut out from the respective mother glass substrates 4 manufactured under the same manufacturing conditions as each other by the same cutting conditions. They are thus considered to be substrates in substantially equal state with each other.

此處,所述切出步驟中,在採用了從母玻璃基板4切下玻璃基板2時所能夠採用的切斷方法中的雷射切割的情況下,能夠將平均端部強度A及平均端部強度B均設為200 MPa以上的切斷條件例示於下述表1中。另外,表1所示的各切斷條件是在從母玻璃基板4切下矩形的玻璃基板2時,四邊(一對長邊2c、長邊2d及一對短邊2e、短邊2f)的各邊的切下時所共用的切斷條件。而且,表1中的「板厚」、「雷射輸出」、「霧流量」、「空氣壓力」、「切割速度」、「光束長度」的各項目分別表示下述事項。 「板厚」:母玻璃基板4(日本電氣硝子公司製造的玻璃基板(製品名:OA-10G))及從母玻璃基板4切下的玻璃基板2的板厚 「雷射輸出」:雷射照射器8照射的雷射7的輸出 「霧流量」:冷媒噴射噴嘴10噴射的冷媒9(使空氣與水混合而成的霧)的每單位時間的流量 「空氣壓力」:冷媒9(霧)中所含的空氣的噴射壓力 「切割速度」:形成於母玻璃基板4的加熱部12及冷卻部13相對於母玻璃基板4而相對移動的速度(等於加工台6移動的速度) 「光束長度」:沿著切割預定線11的雷射7的光點的長度(圖2所示的長度尺寸L)Here, in the cutting step, in the case of laser cutting in the cutting method which can be employed when the glass substrate 2 is cut from the mother glass substrate 4, the average end strength A and the average end can be obtained. The cutting conditions in which the partial strength B is set to 200 MPa or more are exemplified in Table 1 below. In addition, each of the cutting conditions shown in Table 1 is a four-side (a pair of long sides 2c, a long side 2d, a pair of short sides 2e, and a short side 2f) when the rectangular glass substrate 2 is cut out from the mother glass substrate 4. Cutting conditions common to the cutting of each side. Further, each item of "plate thickness", "laser output", "mist flow rate", "air pressure", "cutting speed", and "beam length" in Table 1 indicates the following items. "Thickness": the thickness of the mother glass substrate 4 (glass substrate (product name: OA-10G) manufactured by Nippon Electric Glass Co., Ltd.) and the glass substrate 2 cut from the mother glass substrate 4: "laser output": laser The output "mist flow rate" of the laser beam 7 irradiated by the illuminator 8: the flow rate per unit time of the refrigerant 9 (the mist formed by mixing the air and water) by the refrigerant injection nozzle 10: the refrigerant 9 (fog) The ejection pressure "cutting speed" of the air contained in the air: the speed at which the heating portion 12 and the cooling portion 13 formed on the mother glass substrate 4 relatively move with respect to the mother glass substrate 4 (equal to the speed at which the processing table 6 moves) "beam length" ": the length of the spot of the laser 7 along the line to cut 11 (length dimension L shown in Fig. 2)

[表1] [Table 1]

在表1所示的四個切斷條件下,獲得平均端部強度A均為650 MPa、平均端部強度B均為600 Mpa的結果。即,平均端部強度A與平均端部強度B均為200 MPa以上。因此,藉由在該些四個切斷條件下執行切出步驟,對從各母玻璃基板4切下玻璃基板2所得的多塊玻璃基板2中的、未在樣品採取步驟中作為樣品玻璃基板2X而採取的玻璃基板2,執行熱處理。另外,表1所示的四個切斷條件下切下的玻璃基板2中,關於一對長邊2c、長邊2d及一對短邊2e、短邊2f的各者,每1 mm所含的缺陷(全長為1 μm以上的微裂紋)的個數為10個以下。關於該個數,與藉由進行使用了劃線輪(scribe wheel)的劃線切割,將一對長邊2c、長邊2d及一對短邊2e、短邊2f的各者切下的情況相比,為極少的個數,認為平均端部強度A及平均端部強度B是獲得大幅超過200 MPa的強度的因素。Under the four cutting conditions shown in Table 1, the average end strength A was 650 MPa, and the average end strength B was 600 Mpa. That is, the average end strength A and the average end strength B are both 200 MPa or more. Therefore, by performing the cutting step under the four cutting conditions, the plurality of glass substrates 2 obtained by cutting the glass substrate 2 from each of the mother glass substrates 4 are not used as the sample glass substrate in the sample taking step. The glass substrate 2 taken in 2X is subjected to heat treatment. In the glass substrate 2 cut under the four cutting conditions shown in Table 1, the pair of long sides 2c, long sides 2d, and a pair of short sides 2e and short sides 2f are included for every 1 mm. The number of defects (microcracks having a total length of 1 μm or more) is 10 or less. Regarding the number, each of the pair of long sides 2c, long sides 2d, and a pair of short sides 2e and short sides 2f is cut by scribing using a scribe wheel. In comparison, for a very small number, it is considered that the average end strength A and the average end strength B are factors which obtain a strength which greatly exceeds 200 MPa.

另外,切出步驟中能夠採用的切斷方法中的、能夠將平均端部強度A及平均端部強度B均設為200 MPa以上的切斷方法並不限於雷射切割。在除雷射切割外,採用雷射熔斷或彎曲應力切斷作為切斷方法的情況下,亦能夠將平均端部強度A與平均端部強度B均設為200 MPa以上。另外,該雷射熔斷或彎曲應力切斷較佳為用於母玻璃基板4的板厚為300 μm以下的情況。In addition, in the cutting method which can be used in the cutting step, the cutting method capable of setting the average end strength A and the average end strength B to 200 MPa or more is not limited to laser cutting. In the case of laser cutting or bending stress cutting as the cutting method in addition to the laser cutting, the average end strength A and the average end strength B can be set to 200 MPa or more. Further, the laser fusing or bending stress cutting is preferably performed when the thickness of the mother glass substrate 4 is 300 μm or less.

以下,對切出步驟中採用雷射熔斷或彎曲應力切斷作為切斷方法的情況下的形態進行說明。首先,對利用雷射熔斷執行切出步驟的情況下的形態進行說明。Hereinafter, a mode in the case where a laser fuse or a bending stress cut is used as the cutting method in the cutting step will be described. First, an embodiment in the case where the cutting step is performed by laser fusing will be described.

如圖5所示,母玻璃基板4的雷射熔斷中使用熔斷裝置29。熔斷裝置29包括:從下方支持母玻璃基板4的加工台6,對母玻璃基板4照射雷射7的雷射照射器8,以及輔助氣體噴射噴嘴32,該輔助氣體噴射噴嘴32噴射用以使利用雷射7的熱而熔融的熔融玻璃30飛散的第一輔助氣體31。As shown in FIG. 5, the fuse device 29 is used for the laser blow of the mother glass substrate 4. The fuse device 29 includes a processing table 6 that supports the mother glass substrate 4 from below, a laser illuminator 8 that irradiates the mother glass substrate 4 with the laser beam 7, and an auxiliary gas injection nozzle 32 that is sprayed to make The first auxiliary gas 31 scattered by the molten glass 30 melted by the heat of the laser beam 7 is used.

雷射照射器8以固定於定點的狀態設置,其內部安裝著用以使雷射7聚集而照射至母玻璃基板4的透鏡8a。該雷射照射器8上連結著氣體導入管8b,該氣體導入管8b用以將沿著雷射7的照射方向噴射的第二輔助氣體33導入至內部。而且,雷射照射器8中形成著用以分別照射及噴射雷射7及第二輔助氣體33的照噴射口8c。輔助氣體噴射噴嘴32成為相對於母玻璃基板4的表面4b傾斜的姿勢,並且以固定於定點的狀態設置。輔助氣體噴射噴嘴32形成為筒狀,能夠將通過其內部的第一輔助氣體31朝向雷射7的照射部34噴射。加工台6隔著雷射7的照射部34而設置一對。該一對加工台6、加工台6能夠在支持母玻璃基板4的狀態下,沿著與圖5中的紙面鉛垂的方向同步地移動。The laser illuminator 8 is provided in a state of being fixed at a fixed point, and a lens 8a for concentrating the laser beam 7 to be irradiated onto the mother glass substrate 4 is mounted inside. The laser illuminator 8 is connected to a gas introduction pipe 8b for introducing the second auxiliary gas 33 sprayed in the irradiation direction of the laser beam 7 to the inside. Further, the laser irradiator 8 is formed with a photographing ejection port 8c for respectively irradiating and ejecting the laser beam 7 and the second assist gas 33. The auxiliary gas injection nozzle 32 is inclined with respect to the surface 4b of the mother glass substrate 4, and is provided in a state of being fixed at a fixed point. The auxiliary gas injection nozzle 32 is formed in a tubular shape, and is capable of ejecting the first auxiliary gas 31 passing through the inside thereof toward the irradiation portion 34 of the laser beam 7. The processing table 6 is provided with a pair of the irradiation portions 34 of the laser beam 7. The pair of processing table 6 and the processing table 6 can move in synchronization with the direction perpendicular to the paper surface in FIG. 5 while supporting the mother glass substrate 4.

該熔斷裝置29伴隨支持母玻璃基板4的兩加工台6、加工台6的移動,從雷射照射器8朝向母玻璃基板4連續地照射雷射7。而且,利用從輔助氣體噴射噴嘴32噴射的第一輔助氣體31及從雷射照射器8噴射的第二輔助氣體33,使利用雷射7的照射部34熔融的熔融玻璃30飛散而去除,由此將母玻璃基板4熔斷。The fuse device 29 continuously irradiates the laser beam 7 from the laser irradiator 8 toward the mother glass substrate 4 with the movement of the two processing stages 6 and the processing table 6 supporting the mother glass substrate 4. Further, the first auxiliary gas 31 injected from the auxiliary gas injection nozzle 32 and the second auxiliary gas 33 injected from the laser illuminator 8 are used to disperse and remove the molten glass 30 melted by the irradiation unit 34 of the laser beam 7 by This melts the mother glass substrate 4.

作為一例,在利用所述熔斷裝置29,從板厚為100 μm的母玻璃基板4切下玻璃基板2時,若將雷射輸出設為14 W,雷射7的光點徑(母玻璃基板4的表面4b上的直徑)設為75 μm,脈衝週期/脈衝寬度設為1000/180 μm,熔斷速度(等於兩加工台6、加工台6移動的速度)設為20 mm/s,輔助氣體噴射噴嘴32相對於母玻璃基板4的表面4b的傾斜角度θ設為35°,第一輔助氣體31的流量設為20 L/min,第二輔助氣體33的流量設為10 L/min,則能夠將平均端部強度A與平均端部強度B均設為200 MPa以上。利用所述形態切下的玻璃基板2的端部2g成為藉由雷射熔斷形成的熔斷端部。As an example, when the glass substrate 2 is cut out from the mother glass substrate 4 having a thickness of 100 μm by the fuse device 29, if the laser output is 14 W, the spot diameter of the laser beam 7 (mother glass substrate) The diameter on the surface 4b of 4 is set to 75 μm, the pulse period/pulse width is set to 1000/180 μm, and the fusing speed (equal to the speed at which the two processing stations 6 and the processing table 6 move) is set to 20 mm/s, and the assist gas The inclination angle θ of the injection nozzle 32 with respect to the surface 4b of the mother glass substrate 4 is 35°, the flow rate of the first assist gas 31 is 20 L/min, and the flow rate of the second assist gas 33 is 10 L/min. Both the average end strength A and the average end strength B can be set to 200 MPa or more. The end portion 2g of the glass substrate 2 cut in the above-described manner is a fusing end portion formed by laser fusing.

接下來,對利用彎曲應力切斷執行切出步驟的情況下的形態進行說明。Next, an embodiment in the case where the cutting step is performed by bending stress cutting will be described.

如圖6所示,母玻璃基板4的彎曲應力切斷中使用切斷裝置35。切斷裝置35包括:支持構件36,形成著從下方支持母玻璃基板4的支持面36a;以及裂紋形成器38,在支持於支持構件36的母玻璃基板4的切斷預定線37(圖6中沿與紙面鉛垂的方向延伸)上形成裂紋。As shown in FIG. 6, the cutting device 35 is used for cutting the bending stress of the mother glass substrate 4. The cutting device 35 includes a support member 36 formed with a support surface 36a for supporting the mother glass substrate 4 from below, and a crack former 38 for cutting the predetermined line 37 of the mother glass substrate 4 supported by the support member 36 (FIG. 6) A crack is formed on the middle edge extending in the direction perpendicular to the paper surface.

形成於支持構件36的支持面36a形成於以相同曲率半徑R彎曲的部分圓筒面,使支持於支持構件36的母玻璃基板4的包含切斷預定線37的部位仿照部分圓筒面而彎曲,由此能夠對該部位賦予彎曲應力。裂紋形成器38藉由其前端部按壓母玻璃基板4,而能夠在切斷預定線37上形成裂紋。The support surface 36a formed on the support member 36 is formed on a partial cylindrical surface which is curved at the same radius of curvature R, and the portion including the planned cutting line 37 of the mother glass substrate 4 supported by the support member 36 is bent in accordance with the partial cylindrical surface. Thereby, it is possible to impart bending stress to the portion. The crack former 38 can form a crack on the line to cut 37 by pressing the mother glass substrate 4 at the tip end portion thereof.

使用了該切斷裝置35的母玻璃基板4的切斷步驟中,首先,執行如下的彎曲步驟,即,藉由在支持構件36上載置母玻璃基板4,而使母玻璃基板4中的包含切斷預定線37的部位仿照支持面36a彎曲。接下來,執行裂紋形成步驟,即,從母玻璃基板4的凸彎曲面4c側在切斷預定線37上形成成為切斷起點的裂紋。藉此,將裂紋作為切斷的起點,利用對包含切斷預定線37的部位賦予的彎曲應力,使切斷部沿著切斷預定線37的全長進展,由此將母玻璃基板4切斷。In the cutting step of the mother glass substrate 4 using the cutting device 35, first, a bending step is performed in which the mother glass substrate 4 is placed on the supporting member 36 to include the mother glass substrate 4 The portion where the predetermined line 37 is cut is bent in conformity with the support surface 36a. Next, a crack forming step is performed in which a crack which is a starting point of cutting is formed on the planned cutting line 37 from the convex curved surface 4c side of the mother glass substrate 4. By using the crack as the starting point of the cutting, the cutting portion is advanced along the entire length of the line to cut 37 by the bending stress applied to the portion including the line to cut 37, thereby cutting the mother glass substrate 4 .

作為一例,在利用所述切斷裝置35從板厚為200 μm的母玻璃基板4切下玻璃基板2時,若將支持面36a的曲率半徑R設為250 mm(對包含切斷預定線37的部位賦予約35 MPa的彎曲應力),則能夠將平均端部強度A及平均端部強度B均設為200 MPa以上。利用所述形態切下的玻璃基板2的端部2g成為藉由彎曲應力切斷形成的切斷端部。As an example, when the glass substrate 2 is cut out from the mother glass substrate 4 having a thickness of 200 μm by the cutting device 35, the radius of curvature R of the support surface 36a is set to 250 mm (for the line to cut 37) The average end strength A and the average end strength B can be set to 200 MPa or more by imparting a bending stress of about 35 MPa. The end portion 2g of the glass substrate 2 cut out in the above-described manner is a cut end portion which is cut by bending stress.

另外,除所述雷射熔斷或彎曲應力切斷外,在藉由使用了氟化氫(HF)等的蝕刻執行了切出步驟的情況下,亦能夠將平均端部強度A與平均端部強度B均設為200 MPa以上。Further, in addition to the laser blow or bending stress cut, even when the cutting step is performed by etching using hydrogen fluoride (HF) or the like, the average end strength A and the average end strength B can be also obtained. Both are set to 200 MPa or more.

<熱處理步驟> 以下,說明對玻璃基板2實施熱處理的熱處理步驟。首先,對玻璃基板2與支持該玻璃基板2的托架1的重疊的形態、及對於熱處理步驟中使用而言較佳的托架1進行說明。<Heat Treatment Step> Hereinafter, a heat treatment step of performing heat treatment on the glass substrate 2 will be described. First, the form in which the glass substrate 2 overlaps with the carrier 1 supporting the glass substrate 2 and the bracket 1 which is preferable for use in the heat treatment step will be described.

如圖7所示,熱處理步驟中,在使其端部2g作為切割端部的玻璃基板2整體,與較玻璃基板2大一圈的托架1重疊的狀態下,對玻璃基板2實施熱處理。關於玻璃基板2,使其表面與背面中的未殘存第四初始裂紋25的痕跡的面與托架1接觸。即,使以凸出的方式彎曲的情況下端部強度更高的面與托架1接觸。另外,玻璃基板2亦可在與托架1重疊前清洗。據此,可防止在獲得玻璃基板2的過程中附著的異物伴隨熱處理而燒付於玻璃基板2。As shown in FIG. 7, in the heat treatment step, the glass substrate 2 is heat-treated in a state in which the entire end of the glass substrate 2 having the end portion 2g as the cut end portion is overlapped with the carrier 1 which is slightly larger than the glass substrate 2. Regarding the glass substrate 2, the surface of the surface and the back surface where the trace of the fourth initial crack 25 does not remain is in contact with the carrier 1. That is, when the surface is bent in a convex manner, the surface having a higher end strength is brought into contact with the bracket 1. Further, the glass substrate 2 may be cleaned before being overlapped with the cradle 1. According to this, it is possible to prevent the foreign matter adhering during the process of obtaining the glass substrate 2 from being burned on the glass substrate 2 by the heat treatment.

此處,作為本實施形態的變形例,在使其端部2g作為熔斷端部的玻璃基板2與托架1重疊的情況下,使以凸出的方式彎曲的情況下端部強度更高的面與托架1接觸,因而是使雷射熔斷時位於雷射7的照射目標側的面與托架1接觸。而且,作為其他變形例,在使其端部2g作為切斷端部的玻璃基板2與托架1重疊的情況下,亦使以凸出的方式彎曲的情況下端部強度更高的面與托架1接觸,因而是使彎曲應力切斷時為凹彎曲面的面與托架1接觸。In the case of the modification of the present embodiment, when the glass substrate 2 having the end portion 2g as the fuse end portion is overlapped with the bracket 1, the surface having a higher end strength when the projection is bent in a convex manner The contact with the carrier 1 is such that the surface on the irradiation target side of the laser 7 is brought into contact with the carrier 1 when the laser is blown. Further, as another modification, when the glass substrate 2 having the end portion 2g as the cut end portion is overlapped with the bracket 1, the surface having a higher end strength and the support are also bent when the end portion 2g is bent. Since the frame 1 is in contact with each other, the surface which is a concave curved surface when the bending stress is cut is brought into contact with the bracket 1.

托架1為一塊板狀構件。此處,若玻璃基板2與托架1的兩者間熱膨脹係數之差大,則因熱處理時的玻璃基板2與托架1的膨脹差,而在玻璃基板2產生損傷等的可能性增高。因此,作為托架1的材質,較佳為使用具有與玻璃基板2同等的熱膨脹係數的材質。具體來說,較佳為使用30℃~380℃的溫度區域中的與玻璃基板2的熱膨脹係數之差為5×10- 7 /℃以內的材質。另外,最佳為,使用具有與玻璃基板2相同組成的玻璃。因此,本實施形態中,使托架1由無鹼玻璃製板狀構件構成。The bracket 1 is a plate-like member. When the difference in thermal expansion coefficient between the glass substrate 2 and the carrier 1 is large, the expansion of the glass substrate 2 and the carrier 1 during heat treatment is inferior, and the glass substrate 2 may be damaged or the like. Therefore, as the material of the bracket 1, it is preferable to use a material having a thermal expansion coefficient equivalent to that of the glass substrate 2. Specifically, it is preferable to use a material having a difference in thermal expansion coefficient from the glass substrate 2 in a temperature range of 30 ° C to 380 ° C of 5 × 10 - 7 / ° C or less. Further, it is preferable to use a glass having the same composition as that of the glass substrate 2. Therefore, in the present embodiment, the bracket 1 is made of a plate-like member made of an alkali-free glass.

另外,托架1亦可包含矽酸鹽玻璃、二氧化矽玻璃、硼矽玻璃等其他玻璃材料。而且,亦可使用包含玻璃以外的富耐熱性的材料,例如陶瓷或金屬等的托架1。In addition, the bracket 1 may also contain other glass materials such as bismuth silicate glass, bismuth oxide glass, and borosilicate glass. Further, a material containing a heat-resistant material other than glass, for example, a bracket 1 of ceramic or metal may be used.

托架1的板厚較佳為0.5 mm~3.0 mm,更佳為0.5 mm~2.5 mm,進而較佳為0.5 mm~2.0 mm,進而更佳為0.7 mm~2.0 mm,最佳為1.0 mm~2.0 mm。其原因在於,在托架1的板厚小於0.5 mm的情況下,托架1伴隨熱處理變形的可能性增高,在托架1的板厚大於3.0 mm的情況下,托架1的熱容量增大,而熱處理中熱能會不當地消失。因此,若將托架1的板厚設定於所述範圍內,則可高精度且有效率地進行玻璃基板2的熱處理。The thickness of the bracket 1 is preferably from 0.5 mm to 3.0 mm, more preferably from 0.5 mm to 2.5 mm, further preferably from 0.5 mm to 2.0 mm, further preferably from 0.7 mm to 2.0 mm, and most preferably from 1.0 mm to ~ 2.0 mm. The reason for this is that, in the case where the thickness of the bracket 1 is less than 0.5 mm, the possibility that the bracket 1 is deformed with heat treatment is increased, and in the case where the thickness of the bracket 1 is larger than 3.0 mm, the heat capacity of the bracket 1 is increased. And the heat energy in the heat treatment will not disappear. Therefore, when the thickness of the bracket 1 is set within the above range, the heat treatment of the glass substrate 2 can be performed with high precision and efficiency.

圖7中雖省略圖示,但托架1中的與玻璃基板2的接觸部亦可包含無機薄膜。據此,即便在伴隨熱處理而玻璃基板2達到高溫的情況下,亦能夠避免玻璃基板2相對於托架1黏著之類的事態的發生。因此,熱處理步驟後,能夠使玻璃基板2與托架1容易地分離,可儘可能地排除伴隨與托架1的分離,玻璃基板2破損的可能性。另外,無機薄膜能夠利用濺鍍法、真空蒸鍍法、化學氣相沈積(Chemical Vapor Deposition,CVD)法、溶膠凝膠法等公知的方法成膜。Although not shown in FIG. 7, the contact portion with the glass substrate 2 in the bracket 1 may include an inorganic thin film. According to this, even when the glass substrate 2 reaches a high temperature accompanying the heat treatment, it is possible to avoid the occurrence of a situation in which the glass substrate 2 adheres to the carrier 1. Therefore, after the heat treatment step, the glass substrate 2 and the carrier 1 can be easily separated, and the possibility of damage to the glass substrate 2 accompanying separation from the carrier 1 can be eliminated as much as possible. Further, the inorganic thin film can be formed by a known method such as a sputtering method, a vacuum deposition method, a chemical vapor deposition (CVD) method, or a sol-gel method.

無機薄膜例如可使選自ITO、Ti、Si、Au、Ag、Al、Cr、Cu、Mg、SiO2 、Al2 O3 、MgO、Y2 O3 、La2 O3 、Pr6 O11 、Sc2 O3 、WO3 、HfO2 、In2 O3 、ZrO2 、Nd2 O3 、Ta2 O5 、CeO2 、Nb2 O5 、TiO、TiO2 、Ti3 O5 、NiO、ZnO、SiN、AlN中的任一種的膜或者兩種以上的膜積層而構成。另外,尤佳為該些膜中的由ITO等氧化物構成的無機薄膜。其原因在於,包含氧化物的薄膜對熱的尺寸穩定性優異,因而能夠將形成該薄膜的托架1重複地用於熱處理步驟。The inorganic thin film may be, for example, selected from the group consisting of ITO, Ti, Si, Au, Ag, Al, Cr, Cu, Mg, SiO 2 , Al 2 O 3 , MgO, Y 2 O 3 , La 2 O 3 , and Pr 6 O 11 . Sc 2 O 3 , WO 3 , HfO 2 , In 2 O 3 , ZrO 2 , Nd 2 O 3 , Ta 2 O 5 , CeO 2 , Nb 2 O 5 , TiO, TiO 2 , Ti 3 O 5 , NiO, ZnO A film of any one of SiN and AlN or a film of two or more types is laminated. Further, an inorganic thin film made of an oxide such as ITO in the films is particularly preferable. The reason for this is that the film containing the oxide is excellent in dimensional stability of heat, and thus the carrier 1 forming the film can be repeatedly used for the heat treatment step.

無機薄膜的表面粗糙度Ra(日本工業標準(Japanese Industrial Standards,JIS)B0601中規定的算出平均粗糙度Ra)的值較佳為100 nm以下,更佳為80 nm以下,進而更佳為50 nm以下,最佳為10 nm以下。其原因在於,若表面粗糙度Ra的值大於100 nm,則氣泡容易介於玻璃基板2與托架1之間,熱處理的過程中玻璃基板2相對於托架1容易滑動,托架1難以穩定地支持玻璃基板2。The value of the surface roughness Ra of the inorganic thin film (the calculated average roughness Ra specified in Japanese Industrial Standards (JIS) B0601) is preferably 100 nm or less, more preferably 80 nm or less, and still more preferably 50 nm. Below, the best is below 10 nm. The reason is that if the value of the surface roughness Ra is larger than 100 nm, the bubbles are easily interposed between the glass substrate 2 and the carrier 1. During the heat treatment, the glass substrate 2 is easily slid with respect to the carrier 1, and the carrier 1 is difficult to stabilize. The glass substrate 2 is supported.

然而,若無機薄膜的表面粗糙度Ra的值過小,則熱處理中,玻璃基板2相對於無機薄膜的密接力變得過高,熱處理步驟後難以使玻璃基板2自托架1分離。因此,表面粗糙度Ra的值較佳設為1.0 nm以上,更佳設為2.0 nm以上,進而較佳設為3.0 nm以上。另外,無機薄膜的表面粗糙度Ra的值能夠使用觸針式表面粗糙度計或原子力顯微鏡(atomic force microscope,AFM)等測定。However, when the value of the surface roughness Ra of the inorganic thin film is too small, the adhesion between the glass substrate 2 and the inorganic thin film becomes too high during the heat treatment, and it is difficult to separate the glass substrate 2 from the carrier 1 after the heat treatment step. Therefore, the value of the surface roughness Ra is preferably 1.0 nm or more, more preferably 2.0 nm or more, further preferably 3.0 nm or more. Further, the value of the surface roughness Ra of the inorganic thin film can be measured using a stylus type surface roughness meter or an atomic force microscope (AFM).

另外,若考慮用以形成無機薄膜的成本或無機薄膜的強度,則其厚度較佳為500 nm以下,更佳為400 nm以下,最佳為300 nm以下。然而,若無機薄膜的厚度過小,則熱處理步驟後,難以使玻璃基板2自托架1分離。因此,無機薄膜的厚度較佳為5 nm以上。Further, in consideration of the cost of forming the inorganic thin film or the strength of the inorganic thin film, the thickness thereof is preferably 500 nm or less, more preferably 400 nm or less, and most preferably 300 nm or less. However, if the thickness of the inorganic thin film is too small, it is difficult to separate the glass substrate 2 from the carrier 1 after the heat treatment step. Therefore, the thickness of the inorganic thin film is preferably 5 nm or more.

而且,托架1中的與玻璃基板2的接觸部亦可粗化。據此,與如所述般使接觸部包含無機薄膜的情況同樣地,即便在伴隨熱處理而玻璃基板2達到高溫的情況下,亦能夠避免玻璃基板2相對於托架1黏著之類的事態的發生。作為粗化的方法,可利用以氟酸為首的酸處理或研磨等來進行。Further, the contact portion with the glass substrate 2 in the bracket 1 can also be roughened. According to this, in the case where the contact portion includes the inorganic thin film as described above, even when the glass substrate 2 reaches a high temperature due to the heat treatment, the state in which the glass substrate 2 adheres to the carrier 1 can be avoided. occur. As a method of roughening, it can carry out by acid-processing, grinding, etc., using a fluoric acid.

以下,對熱處理中使用的熱處理爐3進行說明。Hereinafter, the heat treatment furnace 3 used for the heat treatment will be described.

如圖1所示,熱處理爐3包括:玻璃腔室39,在載置著玻璃架40的狀態下相對於玻璃腔室39升降移動的升降台41,收容著玻璃腔室39的爐壁42,以及從外部加熱玻璃腔室39的加熱器43。該熱處理爐3配置於無塵室內,熱處理步驟在無塵室內執行。As shown in Fig. 1, the heat treatment furnace 3 includes a glass chamber 39, a lifting table 41 that moves up and down with respect to the glass chamber 39 in a state in which the glass frame 40 is placed, and a furnace wall 42 that houses the glass chamber 39. And a heater 43 that heats the glass chamber 39 from the outside. The heat treatment furnace 3 is placed in a clean room, and the heat treatment step is performed in a clean room.

玻璃腔室39形成為下端形成著開口部的有蓋筒狀體,其內部形成著熱處理空間S。該玻璃腔室39藉由將石英玻璃一體成形而形成,無接縫地形成熱處理空間S。The glass chamber 39 is formed as a covered cylindrical body having an opening formed at its lower end, and a heat treatment space S is formed inside thereof. The glass chamber 39 is formed by integrally molding quartz glass, and the heat treatment space S is formed without seams.

玻璃架40具有上下多層配置的收容部44,各收容部44具備設置於升降台41上的一對柱部40a、柱部40a及能夠相對於柱部40a、柱部40a裝卸的架板40b。柱部40a及架板40b均由石英玻璃形成。本實施形態中,使用格子狀的框體作為架板40b,在架板40b的上表面設置著多個銷狀的突起。而且,從下方側支持平放姿勢的玻璃基板2的托架1藉由銷狀的突起而從下方側受到支持。The glass holder 40 has a housing portion 44 that is disposed in a plurality of layers, and each of the housing portions 44 includes a pair of column portions 40a provided on the elevation table 41, a column portion 40a, and a shelf 40b that can be attached to and detached from the column portion 40a and the column portion 40a. Both the column portion 40a and the shelf plate 40b are formed of quartz glass. In the present embodiment, a lattice-shaped frame body is used as the shelf plate 40b, and a plurality of pin-shaped projections are provided on the upper surface of the shelf plate 40b. Further, the bracket 1 of the glass substrate 2 that supports the flat posture from the lower side is supported by the lower side from the pin-like projection.

升降台41具有載置著玻璃架40的石英玻璃製的載置部41a,當該載置部41a位於上升位置時,形成於玻璃腔室39的下端的開口部閉合,玻璃架40配置於熱處理空間S內。另一方面,當載置部41a下降至圖示省略的下降位置時,對載置於載置部41a的玻璃架40的各收容部44,進行托架1及玻璃基板2的裝載及卸載。The lifting table 41 has a mounting portion 41a made of quartz glass on which the glass frame 40 is placed. When the mounting portion 41a is at the raised position, the opening formed at the lower end of the glass chamber 39 is closed, and the glass holder 40 is placed in the heat treatment. Within space S. On the other hand, when the placing portion 41a is lowered to the lowering position shown in the drawing, loading and unloading of the bracket 1 and the glass substrate 2 are performed on the respective housing portions 44 of the glass holder 40 placed on the placing portion 41a.

爐壁42形成為下端形成著開口部的有蓋筒狀,其整體包含耐火物。爐壁42中的側壁的內壁面及頂壁的內壁面分別安裝著加熱器43。作為加熱器43,例如能夠使用以鎳鉻合金系發熱體為代表的金屬系發熱體。The furnace wall 42 is formed in a closed cylindrical shape having an opening at its lower end, and the entire body contains a refractory. A heater 43 is attached to the inner wall surface of the side wall of the furnace wall 42 and the inner wall surface of the top wall, respectively. As the heater 43, for example, a metal-based heating element typified by a nichrome-based heating element can be used.

圖1中雖省略圖示,但在熱處理爐3中設置著從外部將玻璃腔室39冷卻的冷卻機構(例如送風機)。藉由設置該冷卻機構,可效率佳地將經加熱器43加熱的熱處理空間S的環境冷卻。Although not shown in FIG. 1, the heat treatment furnace 3 is provided with a cooling mechanism (for example, a blower) that cools the glass chamber 39 from the outside. By providing the cooling mechanism, the environment of the heat treatment space S heated by the heater 43 can be efficiently cooled.

以下,對使用了所述熱處理爐3的熱處理步驟的形態進行說明。該熱處理步驟中,依次實施升溫步驟、保溫步驟、及降溫步驟。Hereinafter, a mode of the heat treatment step using the heat treatment furnace 3 will be described. In the heat treatment step, the temperature increasing step, the holding step, and the cooling step are sequentially performed.

在實施升溫步驟前,使升降台41的載置部41a位於下降位置,在玻璃架40的各收容部44裝載托架1及玻璃基板2後,使升降台41上升移動而將玻璃架40配置於玻璃腔室39內的熱處理空間S。另外,托架1及玻璃基板2對於各收容部44的裝載以及熱處理後的從各收容部44的卸載,例如可使用能夠從下方支持托架1的機械叉(robot fork)而進行。Before the temperature raising step is performed, the mounting portion 41a of the lifting platform 41 is placed at the lowered position, and after the bracket 1 and the glass substrate 2 are loaded in the respective housing portions 44 of the glass holder 40, the lifting table 41 is moved upward to arrange the glass holder 40. The heat treatment space S in the glass chamber 39. Further, the loading of the accommodating portion 44 and the unloading of the accommodating portion 44 after the heat treatment of the cradle 1 and the glass substrate 2 can be performed, for example, by using a robot fork that can support the cradle 1 from below.

升溫步驟為使玻璃基板2的溫度上升至規定的溫度的步驟,此處,以玻璃基板2按照3℃/min以上,較佳為5℃/min以上,更佳為7℃/min以上的升溫速度升溫的方式對加熱器43的輸出進行調整。然而,若玻璃基板2的升溫速度過快,則玻璃基板2破損的可能性增高,因而升溫速度較佳設為30℃/min以下,更佳設為20℃/min以下。The temperature rising step is a step of raising the temperature of the glass substrate 2 to a predetermined temperature. Here, the glass substrate 2 is heated at 3 ° C / min or more, preferably 5 ° C / min or more, more preferably 7 ° C / min or more. The output of the heater 43 is adjusted in such a manner that the speed is increased. However, if the temperature rise rate of the glass substrate 2 is too fast, the possibility of breakage of the glass substrate 2 is increased. Therefore, the temperature increase rate is preferably 30° C./min or less, and more preferably 20° C./min or less.

而且,升溫步驟中,從外部對玻璃腔室39內的熱處理空間S進行加熱,直至玻璃基板2的溫度達到玻璃基板2的應變點以下的溫度。具體來說,當將玻璃基板2的應變點設為[T]℃時,進行加熱直至玻璃基板2的溫度較佳為[T-30]℃以下,更佳為[T-50]℃以下,進而更佳為[T-80]℃以下,最佳為[T-100]℃以下。藉此,可防止玻璃基板2產生不當形狀的變化,且可降低玻璃基板2的熱收縮率。然而,若未充分加熱玻璃基板2,則無法使玻璃基板2的熱收縮率適當地降低,因而加熱直至玻璃基板2的溫度為[T-200]℃以上。Further, in the temperature increasing step, the heat treatment space S in the glass chamber 39 is heated from the outside until the temperature of the glass substrate 2 reaches a temperature equal to or lower than the strain point of the glass substrate 2. Specifically, when the strain point of the glass substrate 2 is set to [T] ° C, heating is performed until the temperature of the glass substrate 2 is preferably [T-30] ° C or less, more preferably [T-50] ° C or less. More preferably, it is [T-80] ° C or less, and most preferably [T-100] ° C or less. Thereby, variation in the improper shape of the glass substrate 2 can be prevented, and the heat shrinkage rate of the glass substrate 2 can be reduced. However, if the glass substrate 2 is not sufficiently heated, the heat shrinkage rate of the glass substrate 2 cannot be appropriately lowered, and thus the temperature until the glass substrate 2 is heated is [T-200] ° C or more.

保溫步驟中,將加熱直至成為規定的溫度的玻璃基板2,在維持為該規定的溫度的狀態下保持規定的時間(具體來說5分鐘~120分鐘)。藉此,可儘可能地抑制玻璃基板2的相互間產生形狀不均的可能性,且可適當地降低各個玻璃基板2的熱收縮率。In the heat retention step, the glass substrate 2 heated to a predetermined temperature is maintained for a predetermined period of time (specifically, 5 minutes to 120 minutes) while maintaining the predetermined temperature. Thereby, the possibility of occurrence of shape unevenness between the glass substrates 2 can be suppressed as much as possible, and the heat shrinkage rate of each of the glass substrates 2 can be appropriately reduced.

降溫步驟中,使玻璃基板2的溫度逐漸下降。降溫速度較佳為1℃/min以上,更佳為2℃/min以上,進而更佳為5℃/min以上。藉此,可縮短降溫步驟的處理時間,且可提高玻璃基板2的生產性。然而,若降溫速度過快,則無法充分地降低玻璃基板2的熱收縮率。而且,此外,在玻璃基板2產生翹曲等,玻璃基板2的形狀容易劣化。因此,降溫速度較佳為20℃/min以下,更佳為15℃/min以下。In the temperature lowering step, the temperature of the glass substrate 2 is gradually lowered. The cooling rate is preferably 1 ° C / min or more, more preferably 2 ° C / min or more, and still more preferably 5 ° C / min or more. Thereby, the processing time of the temperature lowering step can be shortened, and the productivity of the glass substrate 2 can be improved. However, if the temperature drop rate is too fast, the heat shrinkage rate of the glass substrate 2 cannot be sufficiently lowered. Further, in addition, warpage or the like occurs in the glass substrate 2, and the shape of the glass substrate 2 is easily deteriorated. Therefore, the temperature drop rate is preferably 20 ° C / min or less, more preferably 15 ° C / min or less.

[實施例] 作為本發明的實施例(實施例1~實施例4),對在所述表1所示的各條件下從母玻璃基板切下的矩形的玻璃基板,實施用以使熱收縮率降低的熱處理後,驗證玻璃基板破損的比例。另外,作為比較例(比較例1~比較例4),執行切割,該切割是利用對母玻璃基板的劃線的形成及對劃線周邊的彎曲應力的賦予而進行切斷,對藉由該切割從母玻璃基板切下的矩形的玻璃基板,實施用以使熱收縮率降低的熱處理後,驗證玻璃基板破損的比例。[Examples] As an example (Examples 1 to 4) of the present invention, a rectangular glass substrate cut out from a mother glass substrate under the respective conditions shown in Table 1 was subjected to heat shrinkage. After the heat treatment with a reduced rate, the ratio of breakage of the glass substrate was verified. Further, as a comparative example (Comparative Example 1 to Comparative Example 4), dicing was performed by cutting the scribe line of the mother glass substrate and applying bending stress to the periphery of the scribe line, thereby The rectangular glass substrate cut out from the mother glass substrate was cut, and the ratio of the damage of the glass substrate was verified after the heat treatment for lowering the heat shrinkage rate.

各實施例及各比較例中,玻璃基板的尺寸為730 mm×920 mm。關於托架,使用在與玻璃基板的接觸部製成ITO膜的托架(日本電氣硝子公司製造的玻璃基板(製品名:OA-10G))。托架的尺寸為750 mm×940 mm,板厚為1.6 mm。玻璃基板及托架分別在無塵室內清洗後乾燥。其後,將玻璃基板與托架重疊,在熱處理溫度:560℃、熱處理時間:60 min的條件下,對玻璃基板實施熱處理。In each of the examples and the comparative examples, the size of the glass substrate was 730 mm × 920 mm. For the bracket, a bracket (a glass substrate (product name: OA-10G) manufactured by Nippon Electric Glass Co., Ltd.) in which an ITO film is formed at a contact portion with a glass substrate is used. The bracket measures 750 mm x 940 mm and has a plate thickness of 1.6 mm. The glass substrate and the carrier are respectively dried in a clean room and then dried. Thereafter, the glass substrate and the carrier were stacked, and the glass substrate was subjected to heat treatment under the conditions of a heat treatment temperature of 560 ° C and a heat treatment time of 60 min.

在實施例1~實施例4的各者中,關於玻璃基板破損的比例,在使玻璃基板的表面(未殘存初始裂紋的痕跡的面)與托架接觸的情況下與使背面(殘存初始裂紋的痕跡的面)與托架接觸的情況下的兩種情況下均進行了驗證。此處,關於實施例1~實施例4的各者,將使表面與托架接觸的玻璃基板與使背面與托架接觸的玻璃基板分別各準備25塊。然後,藉由對25塊中的破損的基板的塊數進行計數而算出破損率。In each of the first to fourth embodiments, the ratio of the damage of the glass substrate was such that the surface of the glass substrate (the surface on which the trace of the initial crack did not remain) was brought into contact with the carrier and the back surface (the residual initial crack) The surface of the trace was verified in both cases in the case of contact with the bracket. Here, in each of the first to fourth embodiments, each of the glass substrate having the surface in contact with the carrier and the glass substrate having the back surface in contact with the carrier were prepared in two pieces. Then, the damage rate was calculated by counting the number of blocks of the damaged substrate in the 25 pieces.

在比較例1~比較例4的各者中,使玻璃基板的背面(形成著成為切割的起點的劃線的面)與托架接觸而進行驗證。另外,比較例1~比較例4的各者中,準備25塊玻璃基板。然後,藉由對25塊中破損的基板的塊數進行計數而算出破損率。而且,比較例1~比較例4中的玻璃基板的板厚分別與實施例1~實施例4中的玻璃基板的板厚對應。In each of Comparative Examples 1 to 4, the back surface of the glass substrate (the surface on which the scribe line which is the starting point of the dicing was formed) was brought into contact with the holder to be verified. Further, in each of Comparative Examples 1 to 4, 25 glass substrates were prepared. Then, the damage rate was calculated by counting the number of blocks of the damaged substrate in 25 pieces. Further, the thicknesses of the glass substrates in Comparative Examples 1 to 4 correspond to the thicknesses of the glass substrates in Examples 1 to 4.

下述表2中表示驗證的結果。此處,表2中括號內的值為成為熱處理對象的玻璃基板的板厚。The results of the verification are shown in Table 2 below. Here, the value in the parentheses in Table 2 is the thickness of the glass substrate to be heat-treated.

[表2] [Table 2]

根據表2所示的結果可知,實施例1~實施例4較之比較例1~比較例4而玻璃基板的破損率大幅降低。設想獲得該結果是因實施例1~實施例4中,玻璃基板的表面凸彎曲時端部強度與背面凸彎曲時端部強度均為200 MPa以上,較之比較例1~比較例4而端部強度增高。另外,比較例1~比較例4中,背面凸彎曲時端部強度(平均端部強度B)均為150 MPa。而且,比較例1~比較例4中,關於切下的玻璃基板的一對長邊及一對短邊的各者,每1 mm所含的缺陷(全長為1 μm以上的微裂紋)的個數為35個,包含了較10個以下的實施例1~實施例4更多的缺陷。According to the results shown in Table 2, in Examples 1 to 4, the breakage ratio of the glass substrate was significantly lowered as compared with Comparative Examples 1 to 4. It is assumed that the results are obtained in Examples 1 to 4, when the surface of the glass substrate is convexly curved, and the end strength at the time of the back surface convex bending is 200 MPa or more, which is compared with Comparative Examples 1 to 4. The strength of the department is increased. Further, in Comparative Examples 1 to 4, the end strength (average end strength B) when the back surface was convexly curved was 150 MPa. In each of Comparative Example 1 to Comparative Example 4, each of the pair of long sides and the pair of short sides of the cut glass substrate has a defect (a microcrack having a total length of 1 μm or more) per 1 mm. The number is 35, and more defects than the 10th to the following Examples 1 to 4 are included.

根據以上的結果推斷,根據本發明的玻璃基板的熱處理方法,對板厚為500 μm以下的玻璃基板,在與托架重疊的狀態下實施用以使熱收縮率降低的熱處理時,能夠防止基板的破損。In the heat treatment method of the glass substrate of the present invention, it is estimated that the glass substrate having a thickness of 500 μm or less can be prevented from being subjected to heat treatment for lowering the heat shrinkage rate in a state of being overlapped with the carrier. Broken.

1‧‧‧托架 2‧‧‧玻璃基板 2a‧‧‧表面 2b‧‧‧背面 2c、2d‧‧‧長邊 2e、2f‧‧‧短邊 2g、2Xc‧‧‧端部 2X‧‧‧樣品玻璃基板 2Xa‧‧‧樣品玻璃基板的表面 2Xb‧‧‧樣品玻璃基板的背面 3‧‧‧熱處理爐 4‧‧‧母玻璃基板 4a‧‧‧端部 4b‧‧‧表面 4c‧‧‧凸彎曲面 5‧‧‧切割裝置 6‧‧‧加工台 7‧‧‧雷射 8‧‧‧雷射照射器 8a‧‧‧透鏡 8b‧‧‧氣體導入管 8c‧‧‧照噴射口 9‧‧‧冷媒 10‧‧‧冷媒噴射噴嘴 11‧‧‧切割預定線 12‧‧‧加熱部 13‧‧‧冷卻部 14‧‧‧初始裂紋 15‧‧‧切割部 16‧‧‧第一初始裂紋 17‧‧‧第一切割預定線 18‧‧‧第一切割部 19‧‧‧第二初始裂紋 20‧‧‧第二切割預定線 21‧‧‧第二切割部 22‧‧‧第三初始裂紋 23‧‧‧第三切割預定線 24‧‧‧第三切割部 25‧‧‧第四初始裂紋 26‧‧‧第四切割預定線 27‧‧‧第四切割部 28‧‧‧板體 29‧‧‧熔斷裝置 30‧‧‧熔融玻璃 31‧‧‧第一輔助氣體 32‧‧‧輔助氣體噴射噴嘴 33‧‧‧第二輔助氣體 34‧‧‧照射部 35‧‧‧切斷裝置 36‧‧‧支持構件 36a‧‧‧支持面 37‧‧‧切斷預定線 38‧‧‧裂紋形成器 39‧‧‧玻璃腔室 40‧‧‧玻璃架 40a‧‧‧柱部 40b‧‧‧架板 41‧‧‧升降台 41a‧‧‧載置部 42‧‧‧爐壁 43‧‧‧加熱器 44‧‧‧收容部 D‧‧‧間隔 R‧‧‧曲率半徑 S‧‧‧熱處理空間 t‧‧‧板厚 X、Y‧‧‧方向 θ‧‧‧傾斜角度 L‧‧‧長度尺寸1‧‧‧ Bracket 2‧‧‧Glass substrate 2a‧‧‧Surface 2b‧‧‧Back 2c, 2d‧‧‧Long side 2e, 2f‧‧‧ Short side 2g, 2Xc‧‧‧End 2X‧‧‧ Sample glass substrate 2Xa‧‧ ‧ Sample glass substrate surface 2Xb‧‧‧ Sample glass substrate back 3.‧‧‧ Heat treatment furnace 4‧‧‧ Mother glass substrate 4a‧‧‧End 4b‧‧‧ Surface 4c‧‧‧ convex Curved surface 5‧‧‧Cutting device 6‧‧‧Processing table 7‧‧‧Laser 8‧‧‧Laser illuminator 8a‧‧‧Lens 8b‧‧‧ gas introduction tube 8c‧‧‧Photo ejection port 9‧‧ ‧Refrigerant 10‧‧‧Refrigerant Spraying Machine 11‧‧‧ Cutting Line 12‧‧‧Heating Department 13‧‧‧Cooling Unit 14‧‧‧Initial Crack 15‧‧‧ Cutting Section 16‧‧‧ First Initial Crack 17‧ ‧‧First cutting line 18‧‧‧First cutting section 19‧‧‧Second initial crack 20‧‧‧Second cutting line 21‧‧‧Second cutting part 22‧‧‧ Third initial crack 23‧ ‧‧The third cutting line 24‧‧ Third cutting section 25‧‧‧ Fourth initial crack 26‧‧‧ fourth Cutting line 27‧‧‧4th cutting section 28‧‧‧Board body 29‧‧‧Fusing device 30‧‧‧Solid glass 31‧‧‧First auxiliary gas 32‧‧‧Assistant gas injection nozzle 33‧‧‧ Second auxiliary gas 34‧‧‧ Irradiation unit 35‧‧‧ Cutting device 36‧‧‧Support member 36a‧‧‧Support surface 37‧‧‧ Cutting line 38‧‧‧ Crack former 39‧‧‧ Glass chamber 40‧‧‧glass frame 40a‧‧‧column 40b‧‧‧shelf 41‧‧‧lifting platform 41a‧‧‧mounting section 42‧‧‧wall 43‧‧‧heater 44‧‧‧ accommodating part D ‧ ‧ ‧ interval R‧ ‧ radius of curvature S‧ ‧ heat treatment space t‧ ‧ board thickness X, Y‧ ‧ direction θ‧‧‧ angle of inclination L‧‧‧ length dimension

圖1是表示本發明的實施形態的玻璃基板的熱處理方法中的熱處理步驟的縱剖正視圖。 圖2是表示本發明的實施形態的玻璃基板的熱處理方法中的切出步驟的立體圖。 圖3a是表示本發明的實施形態的玻璃基板的熱處理方法中的切出步驟的平面圖。 圖3b是表示本發明的實施形態的玻璃基板的熱處理方法中的切出步驟的平面圖。 圖3c是表示本發明的實施形態的玻璃基板的熱處理方法中的切出步驟的平面圖。 圖3d是表示本發明的實施形態的玻璃基板的熱處理方法中的切出步驟的平面圖。 圖3e是表示本發明的實施形態的玻璃基板的熱處理方法中的切出步驟的平面圖。 圖3f是表示本發明的實施形態的玻璃基板的熱處理方法中的切出步驟的平面圖。 圖4a是表示本發明的實施形態的玻璃基板的熱處理方法中的試驗步驟的側視圖。 圖4b是表示本發明的實施形態的玻璃基板的熱處理方法中的試驗步驟的側視圖。 圖5是表示本發明的實施形態的玻璃基板的熱處理方法中的切出步驟的變形例的縱剖正視圖。 圖6是表示本發明的實施形態的玻璃基板的熱處理方法中的切出步驟的變形例的縱剖正視圖。 圖7是表示本發明的實施形態的玻璃基板的熱處理方法中的熱處理步驟的立體圖。Fig. 1 is a vertical cross-sectional front view showing a heat treatment step in a method of heat-treating a glass substrate according to an embodiment of the present invention. 2 is a perspective view showing a cutting step in a method of heat-treating a glass substrate according to an embodiment of the present invention. Fig. 3a is a plan view showing a cutting step in a method of heat-treating a glass substrate according to an embodiment of the present invention. Fig. 3b is a plan view showing a cutting step in a method of heat-treating a glass substrate according to an embodiment of the present invention. Fig. 3c is a plan view showing a cutting step in a method of heat-treating a glass substrate according to an embodiment of the present invention. Fig. 3d is a plan view showing a cutting step in the heat treatment method of the glass substrate according to the embodiment of the present invention. Fig. 3e is a plan view showing a cutting step in a method of heat-treating a glass substrate according to an embodiment of the present invention. Fig. 3f is a plan view showing a cutting step in the heat treatment method of the glass substrate according to the embodiment of the present invention. Fig. 4a is a side view showing a test procedure in a method of heat-treating a glass substrate according to an embodiment of the present invention. Fig. 4b is a side view showing a test procedure in a method of heat-treating a glass substrate according to an embodiment of the present invention. FIG. 5 is a vertical cross-sectional front view showing a modification of the cutting step in the heat treatment method for a glass substrate according to the embodiment of the present invention. FIG. 6 is a vertical cross-sectional front view showing a modification of the cutting step in the heat treatment method for a glass substrate according to the embodiment of the present invention. FIG. 7 is a perspective view showing a heat treatment step in a heat treatment method for a glass substrate according to an embodiment of the present invention.

1‧‧‧托架 1‧‧‧ bracket

2‧‧‧玻璃基板 2‧‧‧ glass substrate

2a‧‧‧表面 2a‧‧‧ surface

2b‧‧‧背面 2b‧‧‧back

3‧‧‧熱處理爐 3‧‧‧heat treatment furnace

39‧‧‧玻璃腔室 39‧‧‧ glass chamber

40‧‧‧玻璃架 40‧‧‧glass shelf

40a‧‧‧柱部 40a‧‧‧ pillar

40b‧‧‧架板 40b‧‧‧ board

41‧‧‧升降台 41‧‧‧ Lifting table

41a‧‧‧載置部 41a‧‧‧Loading Department

42‧‧‧爐壁 42‧‧‧ furnace wall

43‧‧‧加熱器 43‧‧‧heater

44‧‧‧收容部 44‧‧‧ Housing Department

S‧‧‧熱處理空間 S‧‧‧ Heat treatment space

Claims (8)

一種玻璃基板的熱處理方法,在使板厚為500 μm以下的玻璃基板整體與托架重疊的狀態下,對所述玻璃基板實施用以使熱收縮率降低的熱處理,所述玻璃基板的熱處理方法的特徵在於: 作為所述玻璃基板,使用表面側以凸出的方式彎曲的情況下的端部強度、與背面側以凸出的方式彎曲的情況下的端部強度均為200 MPa以上的基板。In a method of heat-treating a glass substrate, a heat treatment for lowering a heat shrinkage rate of the glass substrate is performed in a state in which the entire glass substrate having a thickness of 500 μm or less is overlapped with the carrier, and the heat treatment method for the glass substrate The glass substrate is a substrate having an end portion strength when the surface side is convexly curved and an end portion strength when the back surface side is convexly curved is 200 MPa or more. . 如申請專利範圍第1項所述的玻璃基板的熱處理方法,其中, 所述玻璃基板的板厚為300 μm以下。The method for heat-treating a glass substrate according to claim 1, wherein the glass substrate has a thickness of 300 μm or less. 如申請專利範圍第1項或第2項所述的玻璃基板的熱處理方法,其中, 所述玻璃基板的端部為在將所述玻璃基板從母玻璃基板切下時,藉由雷射切割將所述母玻璃基板切割而形成的切割端部。The method for heat-treating a glass substrate according to claim 1 or 2, wherein the end portion of the glass substrate is cut by laser cutting when the glass substrate is cut from the mother glass substrate The cutting end portion formed by cutting the mother glass substrate. 如申請專利範圍第3項所述的玻璃基板的熱處理方法,其中, 使所述玻璃基板的表面與背面中的、未殘存作為所述母玻璃基板的切割起點的初始裂紋的痕跡的面與所述托架接觸。The method for heat-treating a glass substrate according to the third aspect of the invention, wherein a surface of the surface of the glass substrate and the back surface where no trace of the initial crack of the starting point of the mother glass substrate is not left remains. The bracket is in contact. 如申請專利範圍第4項所述的玻璃基板的熱處理方法,其中, 作為所述玻璃基板,使用通過所述母玻璃基板的切割而形成四邊的每一邊的矩形基板,並且使所述初始裂紋的痕跡在所述玻璃基板僅殘存一個。The method for heat-treating a glass substrate according to claim 4, wherein, as the glass substrate, a rectangular substrate formed by cutting the mother glass substrate to form each of four sides is used, and the initial crack is formed. Only one trace remains on the glass substrate. 如申請專利範圍第2項所述的玻璃基板的熱處理方法,其中, 所述玻璃基板的端部為在將所述玻璃基板從母玻璃基板切下時,藉由雷射熔斷將所述母玻璃基板熔斷而形成的熔斷端部。The method for heat-treating a glass substrate according to claim 2, wherein the end portion of the glass substrate is such that the glass substrate is cut by a laser to cut the mother glass A fuse end formed by the substrate being blown. 如申請專利範圍第2項所述的玻璃基板的熱處理方法,其中, 所述玻璃基板的端部為在將所述玻璃基板從母玻璃基板切下時,藉由執行沿著切斷預定線將所述母玻璃基板切斷的切斷步驟而形成的切斷端部, 所述切斷步驟包括: 彎曲步驟,使所述母玻璃基板中的包含所述切斷預定線的部位彎曲;以及 裂紋形成步驟,從所述母玻璃基板的凸彎曲面側,在所述切斷預定線上形成成為切斷起點的裂紋。The method for heat-treating a glass substrate according to claim 2, wherein the end portion of the glass substrate is formed by cutting along a line to cut when the glass substrate is cut from the mother glass substrate a cutting end portion formed by the cutting step of cutting the mother glass substrate, the cutting step comprising: a bending step of bending a portion of the mother glass substrate including the planned cutting line; and a crack In the forming step, a crack which is a starting point of the cutting is formed on the planned cutting line side from the side of the convex curved surface of the mother glass substrate. 如申請專利範圍第6項或第7項所述的玻璃基板的熱處理方法,其中, 使所述玻璃基板的表面與背面中的、以凸出的方式彎曲的情況下,所述端部強度更高的面與所述托架接觸。The method for heat-treating a glass substrate according to claim 6 or 7, wherein, in the case where the surface of the glass substrate and the back surface are curved in a convex manner, the strength of the end portion is further increased. The high face is in contact with the bracket.
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