TW201708136A - Method of heat treating glass substrate and method of manufacturing thereof characterized in that the glass substrate arranged in a transverse posture is heated at a temperature equal to or lower than the strain point - Google Patents

Method of heat treating glass substrate and method of manufacturing thereof characterized in that the glass substrate arranged in a transverse posture is heated at a temperature equal to or lower than the strain point Download PDF

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TW201708136A
TW201708136A TW105122316A TW105122316A TW201708136A TW 201708136 A TW201708136 A TW 201708136A TW 105122316 A TW105122316 A TW 105122316A TW 105122316 A TW105122316 A TW 105122316A TW 201708136 A TW201708136 A TW 201708136A
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glass substrate
heat treatment
glass
heat
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TW105122316A
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TWI679174B (en
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Takahiro Kawaguchi
Naotoshi INAYAMA
Taiki Minari
Chao-Lin Wu
Chih-Wei Cheng
Fang-Yen Lu
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Nippon Electric Glass Co
Nippon Electric Glass Taiwan Co Ltd
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Abstract

Disclosed herein is a heat treatment method for reducing the heat shrinkage rate of a glass substrate 1 having a thickness of 300 micrometers or less, characterized in that the glass substrate 1 which is arranged in a transverse posture is heated at a temperature equal to or lower than the strain point under the condition that the central portion 1a of the glass substrate is located at a position higher than the peripheral portion 1b of the glass substrate. Preferably, the glass substrate before the heat treatment has a warp portion having a warpage amount of 300 micrometers or less, and the central portion of the glass substrate is located at a position within a range of 10 micrometers and 1000 micrometers higher than the peripheral portion of the glass substrate.

Description

玻璃基板的熱處理方法及玻璃基板的製造方法Heat treatment method for glass substrate and method for producing glass substrate

本發明是有關於一種玻璃(glass)基板的熱處理方法,尤其是有關於一種用以降低壁厚薄的玻璃基板的熱收縮率的熱處理方法。The present invention relates to a heat treatment method for a glass substrate, and more particularly to a heat treatment method for reducing the heat shrinkage rate of a glass substrate having a small wall thickness.

眾所周知,近年來,智慧型手機(smartphone)、輸入板(tablet)型終端機等行動終端機迅速普及,用以使行動終端機薄型化及輕量化、進而高性能化等的技術開發競爭的激烈程度在增加。伴隨於此,就作為行動終端機所搭載的液晶顯示器或有機電致發光(electroluminescence,EL)顯示器等平板顯示器(Flat Panel Display)(以下稱為「FPD」)的構成零件的玻璃基板而言,壁厚薄且熱收縮率低(熱尺寸穩定性優異)、而且形狀精度(尤其是平坦性)優異者變得必不可少。As we all know, in recent years, mobile terminals such as smart phones and tablet-type terminals have rapidly spread, and the competition for technology development such as thinning, lightweight, and high-performance mobile terminals is fierce. The degree is increasing. In this case, a glass substrate which is a component of a flat panel display (hereinafter referred to as "FPD") such as a liquid crystal display or an organic electroluminescence (EL) display mounted on a mobile terminal device is used. It is indispensable that the wall thickness is small, the heat shrinkage rate is low (excellent in thermal dimensional stability), and the shape accuracy (especially flatness) is excellent.

即,於FPD的製造步驟中,通常執行於玻璃基板的表面形成薄膜狀的電路(電路圖案)的成膜處理,但於成膜處理中,作為處理對象的玻璃基板會暴露於高溫下。因此,於玻璃基板的熱收縮率大的情況下或平坦性低的情況下,無法於玻璃基板的表面形成既定精度的電路圖案,其原因在於:無法確保所期望的電特性的可能性高。In other words, in the manufacturing process of the FPD, a film formation process of a film-like circuit (circuit pattern) is usually performed on the surface of the glass substrate. However, in the film formation process, the glass substrate to be processed is exposed to a high temperature. Therefore, when the heat shrinkage rate of the glass substrate is large or the flatness is low, a circuit pattern of a predetermined accuracy cannot be formed on the surface of the glass substrate because the possibility of ensuring desired electrical characteristics is high.

另外,對於玻璃基板,正研究其於形狀自由度優異的可撓性元件(flexible device)、或於佩戴的狀態下加以使用的隨身元件(wearable device)等中的應用。對於此種元件用玻璃基板,要求較FPD用玻璃基板而壁厚更薄。Further, the glass substrate is being studied for use in a flexible device having excellent shape freedom or a wearable device used in a worn state. The glass substrate for such a component is required to be thinner than the glass substrate for FPD.

且說,玻璃基板例如可藉由將利用溢流下拉(overflow downdraw)法所代表的下拉法成形而得的帶狀的玻璃帶(glass ribbon)切斷為既定尺寸而獲得,於所述下拉法中,越加快成形速度(板拉伸速度),可使玻璃帶的板厚越薄。然而,越加快板拉伸速度,徐冷時間變得越短,因而難以降低玻璃基板的熱收縮率。另外,越加快板拉伸速度,調整板形狀的時間亦變得越短,因而亦難以將玻璃帶加工為既定的形狀精度。In addition, the glass substrate can be obtained, for example, by cutting a strip-shaped glass ribbon obtained by a down-draw method represented by an overflow downdraw method into a predetermined size, in the down-draw method. The faster the forming speed (plate stretching speed), the thinner the thickness of the glass ribbon. However, the faster the sheet stretching speed is, the shorter the cooling time becomes, and thus it is difficult to lower the heat shrinkage rate of the glass substrate. Further, as the sheet stretching speed is increased, the time for adjusting the shape of the sheet is also shortened, so that it is difficult to process the glass ribbon to a predetermined shape accuracy.

因此,例如如下述專利文獻1所記載般,有時出於改善玻璃基板的熱尺寸穩定性或平坦性的目的而對玻璃基板施加熱處理。於專利文獻1中,於將作為熱處理對象的玻璃基板載置於平坦的支撐基板(耐熱性玻璃陶瓷板)的狀態下執行熱處理。再者,所述熱處理亦被稱為退火處理(annealing treatment)。 [現有技術文獻] [專利文獻]Therefore, for example, as described in Patent Document 1 below, heat treatment may be applied to the glass substrate for the purpose of improving the thermal dimensional stability or flatness of the glass substrate. In Patent Document 1, heat treatment is performed in a state where a glass substrate to be heat-treated is placed on a flat support substrate (heat-resistant glass ceramic plate). Furthermore, the heat treatment is also referred to as an annealing treatment. [Prior Art Document] [Patent Literature]

[專利文獻1]日本專利特開平5-330835號公報[Patent Document 1] Japanese Patent Laid-Open No. Hei 5-330835

[發明所欲解決之課題] 然而,本發明者等人進行檢驗的結果判明:於以專利文獻1所揭示的態樣對壁厚薄的玻璃基板(具體而言,板厚為300 μm以下的玻璃基板)施加熱處理的情況下,該玻璃基板中,尤其是包含其端面在內的既定區域(周緣部)容易高高翹起,多為無法確保所期望的平坦性的情況。[Problems to be Solved by the Invention] As a result of the examination by the inventors of the present invention, it has been found that a glass substrate having a small thickness is used in the aspect disclosed in Patent Document 1 (specifically, a glass having a thickness of 300 μm or less) In the case where the heat treatment is applied to the substrate, particularly in a predetermined region (peripheral portion) including the end surface thereof, the glass substrate is likely to be highly lifted, and it is often impossible to ensure desired flatness.

鑒於所述實際情況,本發明的目的在於:伴隨於對板厚為300 μm以下的玻璃基板施加用以降低熱收縮率的熱處理,能夠盡可能地避免玻璃基板的平坦性下降,藉此而能夠穩定地量產熱收縮率低、平坦性優異的玻璃基板。 [解決課題之手段]In view of the above, an object of the present invention is to provide a heat treatment for reducing a heat shrinkage rate on a glass substrate having a thickness of 300 μm or less, thereby preventing the flatness of the glass substrate from being lowered as much as possible, thereby stabilizing A glass substrate having a low heat shrinkage rate and excellent flatness. [Means for solving the problem]

為了達成所述目的而創造的本發明是一種用以降低板厚為300 μm以下的玻璃基板的熱收縮率的熱處理方法,其特徵在於:對以橫姿勢配置的所述玻璃基板,於使其中央部位於較其周緣部更高的位置的狀態下,以其應變點以下的溫度進行加熱。再者,本發明中所謂「橫姿勢」,含義與平置姿勢相同,另外,所謂「周緣部」是指包含玻璃基板的端面在內的既定區域。The present invention, which has been made to achieve the above object, is a heat treatment method for reducing the heat shrinkage rate of a glass substrate having a thickness of 300 μm or less, and is characterized in that the glass substrate disposed in a lateral position is subjected to The central portion is heated at a temperature lower than the strain point in a state where it is located higher than the peripheral portion. In the present invention, the term "lateral posture" has the same meaning as the flat posture, and the "peripheral portion" refers to a predetermined region including the end surface of the glass substrate.

若如上所述,於以橫姿勢配置板厚為300 μm以下的玻璃基板,並使該玻璃基板的中央部位於較其周緣部更高的位置的狀態下進行加熱(若施加熱處理),則伴隨於熱處理,玻璃基板的周緣部翹起,藉此,於中央部與周緣部之間預先設定的高低差減小,可於熱處理後獲得平坦性優異的玻璃基板。另外,若以高於玻璃基板的應變點的溫度對玻璃基板進行加熱,則存在於基板內的應變被釋放,與此同時,容易產生微小的形狀變化,但若以玻璃基板的應變點以下的溫度對玻璃基板進行加熱,則可一邊降低玻璃基板的熱收縮率,一邊減少伴隨於應變的釋放的形狀的變化量。藉由以上,可獲得熱收縮率低、平坦性優異的壁厚薄的玻璃基板。As described above, when a glass substrate having a thickness of 300 μm or less is placed in a lateral position and the central portion of the glass substrate is placed at a position higher than the peripheral portion thereof (heat treatment is applied), In the heat treatment, the peripheral portion of the glass substrate is lifted, whereby the difference in height between the center portion and the peripheral portion is reduced, and a glass substrate having excellent flatness can be obtained after the heat treatment. Further, when the glass substrate is heated at a temperature higher than the strain point of the glass substrate, the strain existing in the substrate is released, and at the same time, a slight shape change is likely to occur, but the strain of the glass substrate is not more than the strain point. When the glass substrate is heated at a temperature, the amount of change in shape accompanying the release of strain can be reduced while reducing the heat shrinkage rate of the glass substrate. According to the above, a glass substrate having a small thickness and a low heat shrinkage ratio and excellent flatness can be obtained.

所述構成中,可將熱處理前的玻璃基板設為具有翹曲量為300 μm以下的翹曲部者。In the above configuration, the glass substrate before the heat treatment can be a warped portion having a warpage amount of 300 μm or less.

即,本發明若為具有翹曲量為300 μm以下的翹曲部的玻璃基板,則就改善其平坦性的方面而言可較佳地採用。再者,此處所謂「翹曲量」,是指使用廣泛市售的非接觸式玻璃基板翹曲測定機進行測定而得的值。另外,此處所謂「翹曲部」,是指於玻璃基板的厚度方向發生變形的部分,未必存在於玻璃基板的周緣部,亦有時存在於玻璃基板的中央部等。In other words, in the present invention, a glass substrate having a warpage portion having a warpage amount of 300 μm or less can be preferably used in terms of improving flatness. In addition, the "warpage amount" here is a value measured by the non-contact glass substrate warpage measuring machine which is widely used commercially. In addition, the term "warping portion" as used herein refers to a portion that is deformed in the thickness direction of the glass substrate, and does not necessarily exist in the peripheral portion of the glass substrate, and may be present in the central portion of the glass substrate or the like.

以所述態樣供於熱處理的玻璃基板的中央部較佳為位於在10 μm以上且1000 μm以下的範圍內較該玻璃基板的周緣部更高的位置。The central portion of the glass substrate to be subjected to the heat treatment in the above-described manner is preferably located at a position higher than the peripheral portion of the glass substrate in a range of 10 μm or more and 1000 μm or less.

若如此,則可一邊伴隨於熱處理而改善各個玻璃基板的平坦性,一邊盡可能地避免在熱處理後的玻璃基板彼此間平坦性產生偏差。In this manner, the flatness of each of the glass substrates can be improved with heat treatment, and variations in flatness between the glass substrates after the heat treatment can be avoided as much as possible.

作為用以使玻璃基板的中央部位於較周緣部更高的位置的具體的手段,例如可考慮藉由具有形成為凸曲面狀的玻璃支撐面的支撐構件而自下方側支撐所述玻璃基板。As a specific means for positioning the central portion of the glass substrate at a higher position than the peripheral portion, for example, it is conceivable to support the glass substrate from the lower side by a support member having a glass supporting surface formed in a convex curved shape.

亦可使形成為凸曲面狀的玻璃支撐面較(應支撐的)玻璃基板小。若如此,則玻璃基板的周緣部的至少一部分超出至玻璃支撐面的外側,故若握持玻璃基板的伸出部而將玻璃基板緩緩拉起,則可將玻璃基板自支撐構件分離。因此,可效率良好地實施熱處理步驟。It is also possible to make the glass support surface formed into a convex curved shape smaller than the glass substrate (which should be supported). In this manner, at least a part of the peripheral portion of the glass substrate extends beyond the outer side of the glass supporting surface. Therefore, if the glass substrate is gradually pulled up while holding the protruding portion of the glass substrate, the glass substrate can be separated from the supporting member. Therefore, the heat treatment step can be performed efficiently.

另外,為了使玻璃基板的中央部位於較周緣部更高的位置,亦可藉由具有形成為平坦面、且較玻璃基板小的玻璃支撐面的支撐構件而自下方側加以支撐。Further, in order to position the central portion of the glass substrate at a higher position than the peripheral portion, it may be supported from the lower side by a support member having a flat surface and a glass supporting surface smaller than the glass substrate.

於該情況下,與利用形成為凸曲面狀的玻璃支撐面支撐玻璃基板的情況相比,可盡可能地減小熱處理的過程中玻璃基板相對於玻璃支撐面滑動的可能性,故於降低於玻璃基板的下表面(與玻璃支撐面接觸的面)產生微小缺陷的可能性的方面有利。In this case, as compared with the case where the glass substrate is supported by the glass supporting surface formed into a convex curved surface, the possibility that the glass substrate slides with respect to the glass supporting surface during the heat treatment can be reduced as much as possible, so that it is lowered. It is advantageous in that the lower surface of the glass substrate (the surface in contact with the glass supporting surface) is likely to cause minute defects.

本發明的玻璃基板的熱處理方法具有如上所述的優點,因此可於玻璃基板中,尤其是於對要求壁厚薄的可撓性元件用或者隨身元件用的玻璃基板施加熱處理時較佳地應用。Since the heat treatment method of the glass substrate of the present invention has the above-described advantages, it can be preferably applied to a glass substrate, particularly when a heat treatment is applied to a glass substrate for a flexible member or a body member having a small thickness.

若於包括成形具有300 μm以下的板厚的帶狀的玻璃膜,將該玻璃膜切斷,藉此獲得板厚為300 μm以下的玻璃基板的玻璃基板製作步驟;以及對該玻璃基板施加熱處理的熱處理步驟的玻璃基板的製造方法中,於所述熱處理步驟中應用本發明的玻璃基板的熱處理方法,則可穩定地量產熱收縮率低、平坦性優異的玻璃基板。 [發明的效果]The glass substrate is formed by cutting a glass film having a thickness of 300 μm or less, thereby obtaining a glass substrate having a thickness of 300 μm or less; and applying heat treatment to the glass substrate In the method of producing a glass substrate in the heat treatment step, the glass substrate having the low heat shrinkage ratio and excellent flatness can be stably mass-produced by applying the heat treatment method of the glass substrate of the present invention in the heat treatment step. [Effects of the Invention]

如以上所示,根據本發明,伴隨於對板厚為300 μm以下的玻璃基板施加用以降低熱收縮率的熱處理,可盡可能地避免玻璃基板的平坦性下降。藉此,能夠穩定地量產熱收縮率低、平坦性優異的玻璃基板。As described above, according to the present invention, as the heat treatment for reducing the heat shrinkage rate is applied to the glass substrate having a thickness of 300 μm or less, the flatness of the glass substrate can be prevented from being lowered as much as possible. Thereby, it is possible to stably mass-produce a glass substrate having a low heat shrinkage rate and excellent flatness.

以下,基於圖式對本發明的實施形態進行說明。再者,本發明是有關於一種藉由其後的熱處理步驟對藉由玻璃基板製作步驟所獲得的玻璃基板(詳細而言,板厚為300 μm以下的玻璃基板)進行熱處理時的具體的方法,於玻璃基板製作步驟中,例如將利用溢流下拉法等公知的方法成形而得的帶狀的玻璃膜切斷為既定尺寸,藉此而獲得玻璃基板。因此,省略與玻璃基板製作步驟相關的詳細說明,以下對熱處理步驟進行詳細說明。Hereinafter, embodiments of the present invention will be described based on the drawings. Furthermore, the present invention relates to a specific method for heat-treating a glass substrate (in detail, a glass substrate having a thickness of 300 μm or less) obtained by a glass substrate production step by a subsequent heat treatment step. In the glass substrate production step, for example, a strip-shaped glass film formed by a known method such as an overflow down-draw method is cut into a predetermined size to obtain a glass substrate. Therefore, the detailed description regarding the glass substrate fabrication step will be omitted, and the heat treatment step will be described in detail below.

於熱處理步驟中,一邊調整藉由玻璃基板製作步驟而獲得的玻璃基板1的形狀(使玻璃基板1平坦化),一邊執行用以降低玻璃基板1的熱收縮率的熱處理。於該熱處理步驟中,如圖1B所示,於載置於支撐構件2上的狀態下、即由支撐構件2自下方側加以支撐的狀態下,將作為熱處理對象的玻璃基板1導入至熱處理裝置(熱處理爐)來進行加熱。再者,於玻璃基板製作步驟與熱處理步驟之間亦可設置清洗玻璃基板1的清洗步驟。若預先設置此種清洗步驟,則可防止於獲得玻璃基板1的過程中附著於其表面的異物伴隨於熱處理而燒附於玻璃基板1的表面。In the heat treatment step, the heat treatment for lowering the heat shrinkage rate of the glass substrate 1 is performed while adjusting the shape of the glass substrate 1 obtained by the glass substrate production step (flattening the glass substrate 1). In the heat treatment step, as shown in FIG. 1B, the glass substrate 1 to be heat-treated is introduced into the heat treatment apparatus in a state of being placed on the support member 2, that is, in a state where the support member 2 is supported from the lower side. (heat treatment furnace) to perform heating. Further, a cleaning step of cleaning the glass substrate 1 may be provided between the glass substrate forming step and the heat treatment step. When such a cleaning step is provided in advance, it is possible to prevent foreign matter adhering to the surface of the glass substrate 1 from being attached to the surface of the glass substrate 1 in association with heat treatment.

以下,分別對作為熱處理對象的玻璃基板1、以及熱處理步驟中所使用的支撐構件2及熱處理裝置10進行詳述。Hereinafter, the glass substrate 1 to be heat-treated and the support member 2 and the heat treatment apparatus 10 used in the heat treatment step will be described in detail.

[玻璃基板] 如圖1A所示,玻璃基板1呈平面視矩形形狀,其尺寸較佳為300 mm見方以上,更佳為400 mm見方以上,進而更佳為500 mm見方以上,最佳為600 mm見方以上。[Glass substrate] As shown in FIG. 1A, the glass substrate 1 has a rectangular shape in plan view, and its size is preferably 300 mm square or more, more preferably 400 mm square or more, and further preferably 500 mm square or more, and most preferably 600. Mm see above.

玻璃基板1的板厚為300 μm以下,較佳為200 μm以下,更佳為150 μm以下,最佳為100 μm以下。玻璃基板1的板厚越小,對將玻璃基板1作為構成零件的製品(例如FPD)的薄型化或輕量化等的貢獻度越增加,並且越可賦予可撓性。但是,若玻璃基板1的板厚過小,則無法確保玻璃基板1的作為最低限度而所需的強度。因此,玻璃基板1的板厚較佳為設為5 μm以上。The thickness of the glass substrate 1 is 300 μm or less, preferably 200 μm or less, more preferably 150 μm or less, and most preferably 100 μm or less. The smaller the thickness of the glass substrate 1 is, the greater the contribution to the thinning or weight reduction of a product (for example, FPD) in which the glass substrate 1 is a component, and the flexibility can be imparted. However, if the thickness of the glass substrate 1 is too small, the strength required for the glass substrate 1 as a minimum cannot be ensured. Therefore, the thickness of the glass substrate 1 is preferably set to 5 μm or more.

玻璃基板1的應變點為600℃以上,較佳為650℃以上,更佳為680℃以上,最佳為700℃以上。再者,此處所謂的應變點,是基於美國材料與試驗學會(American Society for Testing and Materials,ASTM)C336中規定的方法測定而得的值。The strain point of the glass substrate 1 is 600 ° C or higher, preferably 650 ° C or higher, more preferably 680 ° C or higher, and most preferably 700 ° C or higher. Further, the strain point referred to herein is a value measured by a method defined in American Society for Testing and Materials (ASTM) C336.

具有所述尺寸、板厚及應變點的玻璃基板1例如可利用矽酸鹽玻璃、二氧化矽玻璃、硼矽酸玻璃、鈉玻璃、無鹼玻璃等而形成。本實施形態中,使用利用所述各種玻璃中最難產生經年劣化的無鹼玻璃而形成的玻璃基板1。此處,所謂無鹼玻璃,是指實質上不含鹼成分(鹼金屬氧化物)的玻璃,具體而言,是指鹼成分的含量為3000 ppm以下的玻璃。作為無鹼玻璃,使用鹼成分的含量較佳為1000 ppm以下、更佳為500 ppm以下、最佳為300 ppm以下者。The glass substrate 1 having the above-described dimensions, thickness, and strain point can be formed, for example, by using bismuth silicate glass, cerium oxide glass, borosilicate glass, soda glass, alkali-free glass, or the like. In the present embodiment, the glass substrate 1 formed by the alkali-free glass which is most difficult to cause deterioration over the years is used. Here, the alkali-free glass means a glass which does not substantially contain an alkali component (alkali metal oxide), and specifically refers to a glass having an alkali component content of 3,000 ppm or less. The alkali-based glass is preferably used in an amount of 1000 ppm or less, more preferably 500 ppm or less, and most preferably 300 ppm or less.

雖省略詳細的圖示,作為熱處理對象的玻璃基板1(熱處理前的玻璃基板1)例如於其一部分具有翹曲部。翹曲部的翹曲量較佳為300 μm以下,更佳為200 μm以下,進而更佳為150 μm以下,最佳為100 μm以下。Though the detailed illustration is omitted, the glass substrate 1 (the glass substrate 1 before heat treatment) which is a heat processing target has a warpage part, for example. The warpage amount of the warpage portion is preferably 300 μm or less, more preferably 200 μm or less, further preferably 150 μm or less, and most preferably 100 μm or less.

[支撐構件] 如圖1A及圖1B所示,支撐構件2為自下方側支撐(接觸支撐)以橫姿勢配置的作為熱處理對象的玻璃基板1者,本實施形態的支撐構件2包括:將上表面設為玻璃支撐面3的支撐部4、及設置於支撐部4的下方側且較支撐部4大的基底部5。本實施形態中,將玻璃支撐面3形成為自其周緣部向中央部緩緩過渡為更高位置的凸曲面(凸球面)狀,且設為與應支撐的玻璃基板1為相同程度的大小。因此,當將玻璃基板1載置於玻璃支撐面3上時,玻璃基板1的端面1c基本上不與基底部5接觸。玻璃支撐面3是以可使玻璃基板1的中央部1a位於在10 μm~1000 μm、較佳為20 μm~1000 μm、更佳為30 μm~1000 μm、最佳為50 μm~1000 μm的範圍內較周緣部1b更高的位置的方式形成。再者,圖1B中,為易於理解而誇大描述玻璃支撐面3的中央部(頂部)與周緣部的高低差。[Support member] As shown in FIG. 1A and FIG. 1B, the support member 2 is a glass substrate 1 to be heat-treated, which is disposed in a lateral position from the lower side (contact support), and the support member 2 of the present embodiment includes: The support portion 4 having the surface of the glass support surface 3 and the base portion 5 provided on the lower side of the support portion 4 and larger than the support portion 4 are provided. In the present embodiment, the glass support surface 3 is formed into a convex curved surface (convex spherical surface) that gradually transitions from the peripheral edge portion toward the central portion to a higher position, and is formed to have the same size as the glass substrate 1 to be supported. . Therefore, when the glass substrate 1 is placed on the glass supporting surface 3, the end surface 1c of the glass substrate 1 is not substantially in contact with the base portion 5. The glass supporting surface 3 is such that the central portion 1a of the glass substrate 1 is located at 10 μm to 1000 μm, preferably 20 μm to 1000 μm, more preferably 30 μm to 1000 μm, and most preferably 50 μm to 1000 μm. It is formed in a range higher than the peripheral portion 1b. Further, in FIG. 1B, the height difference between the central portion (top portion) and the peripheral portion of the glass supporting surface 3 is exaggerated for easy understanding.

本實施形態的支撐構件2是對一塊板狀構件進行加工而形成。於該情況下,若玻璃基板1與支撐構件2的線膨脹係數差大,則因熱處理時的玻璃基板1與支撐構件2的變形量差,而玻璃基板1會相對於支撐構件2(玻璃支撐面3)相對移動,於玻璃基板1(的下表面)產生劃傷等微小缺陷的可能性高。因此,支撐構件2較佳為利用具有與玻璃基板1同等的線膨脹係數的材料(具體而言,30℃~380℃下的與玻璃基板1的線膨脹係數差為5×10-7 /℃以內的材料)來形成,特佳為利用具有與玻璃基板1相同的組成的玻璃來形成。因此,本實施形態中,利用無鹼玻璃製板狀構件來形成支撐構件2。The support member 2 of the present embodiment is formed by processing one plate-shaped member. In this case, if the difference in linear expansion coefficient between the glass substrate 1 and the support member 2 is large, the amount of deformation of the glass substrate 1 and the support member 2 during heat treatment is poor, and the glass substrate 1 is opposed to the support member 2 (glass support) The surface 3) is relatively movable, and there is a high possibility that minute defects such as scratches are generated on the lower surface of the glass substrate 1. Therefore, the support member 2 is preferably made of a material having a linear expansion coefficient equivalent to that of the glass substrate 1 (specifically, the difference in linear expansion coefficient from the glass substrate 1 at 30 ° C to 380 ° C is 5 × 10 -7 / ° C It is formed by the material inside, and it is especially preferable to use the glass which has the same composition as the glass substrate 1. Therefore, in the present embodiment, the support member 2 is formed by a plate-like member made of an alkali-free glass.

再者,支撐構件2亦可利用矽酸鹽玻璃、二氧化矽玻璃、硼矽酸玻璃等其他玻璃材料來形成。當然,亦可利用玻璃以外的富耐熱性的材料、例如陶瓷或金屬等來形成支撐構件2。Further, the support member 2 may be formed using other glass materials such as bismuth silicate glass, ceria glass, or borosilicate glass. Of course, the support member 2 can also be formed using a heat-resistant material other than glass, such as ceramic or metal.

將支撐構件2的厚度(最大厚度)設為0.5 mm~3.0 mm的範圍內,且設為較佳為0.5 mm~2.5 mm、更佳為0.5 mm~2.0 mm、進而更佳為0.7 mm~2.0 mm、最佳為1.0 mm~2.0 mm的範圍內。其原因在於,於支撐構件2的板厚小於0.5 mm的情況下,支撐構件2發生熱變形等的可能性高;於支撐構件2的板厚大於3.0 mm的情況下,支撐構件2的熱容量變大,於熱處理時產生大的能量損失。因此,若將支撐構件2的厚度設定為所述範圍內,則可精度良好而且效率良好地進行玻璃基板1的熱處理。The thickness (maximum thickness) of the support member 2 is set in the range of 0.5 mm to 3.0 mm, and is preferably 0.5 mm to 2.5 mm, more preferably 0.5 mm to 2.0 mm, and still more preferably 0.7 mm to 2.0. Mm, preferably in the range of 1.0 mm to 2.0 mm. The reason for this is that, in the case where the thickness of the support member 2 is less than 0.5 mm, the possibility that the support member 2 is thermally deformed or the like is high; and in the case where the thickness of the support member 2 is more than 3.0 mm, the heat capacity of the support member 2 is changed. Large, resulting in large energy losses during heat treatment. Therefore, when the thickness of the support member 2 is set to the above range, the heat treatment of the glass substrate 1 can be performed with high precision and efficiency.

雖省略圖示,亦可利用無機皮膜構成支撐構件2的玻璃支撐面3。若如此,則於伴隨於熱處理而玻璃基板1成為高溫的情況下,亦可避免玻璃基板1對支撐構件2的接著。藉此,於熱處理後,可容易地將玻璃基板1與支撐構件2分離,故可伴隨於與支撐構件2的分離而盡可能地降低玻璃基板1出現破損等的可能性。再者,無機皮膜可藉由濺鍍法、真空蒸鍍法、化學氣相沈積(Chemical Vapor Deposition,CVD)法、溶膠凝膠法等公知的方法來形成。Although not shown in the drawings, the glass support surface 3 of the support member 2 may be configured by an inorganic film. In this case, when the glass substrate 1 is heated to a high temperature accompanying the heat treatment, the adhesion of the glass substrate 1 to the support member 2 can be avoided. Thereby, since the glass substrate 1 and the support member 2 can be easily separated after the heat treatment, the possibility that the glass substrate 1 is damaged or the like can be reduced as much as possible in association with the support member 2. Further, the inorganic film can be formed by a known method such as a sputtering method, a vacuum deposition method, a chemical vapor deposition (CVD) method, or a sol-gel method.

無機皮膜例如可利用使選自氧化銦錫(indium tin oxide,ITO)、Ti、Si、Au、Ag、Al、Cr、Cu、Mg、SiO2 、Al2 O3 、MgO、Y2 O3 、La2 O3 、Pr6 O11 、Sc2 O3 、WO3 、HfO2 、In2 O3 、ZrO2 、Nd2 O3 、Ta2 O5 、CeO2 、Nb2 O5 、TiO、TiO2 、Ti3 O5 、NiO、ZnO、SiN、AlN的群組中的任一種、或者兩種以上積層而成者來形成。其中,較佳為利用ITO等氧化物來形成無機皮膜。其原因在於,氧化物皮膜的熱穩定性優異,可重複使用。The inorganic film can be selected, for example, from indium tin oxide (ITO), Ti, Si, Au, Ag, Al, Cr, Cu, Mg, SiO 2 , Al 2 O 3 , MgO, Y 2 O 3 , La 2 O 3 , Pr 6 O 11 , Sc 2 O 3 , WO 3 , HfO 2 , In 2 O 3 , ZrO 2 , Nd 2 O 3 , Ta 2 O 5 , CeO 2 , Nb 2 O 5 , TiO, TiO 2 , one of Ti 3 O 5 , NiO, ZnO, SiN, AlN, or a combination of two or more layers. Among them, it is preferred to form an inorganic film by using an oxide such as ITO. The reason for this is that the oxide film is excellent in thermal stability and can be reused.

無機皮膜的表面粗糙度Ra(日本工業標準(Japanese Industrial Standards,JIS)B0601中規定的算出平均粗糙度Ra)較佳為100 nm以下,更佳為80 nm以下,進而更佳為50 nm以下,最佳為10 nm以下。其原因在於,若表面粗糙度Ra大於100 nm,則容易於玻璃基板1與玻璃支撐面3之間介存空氣層,於熱處理的過程中,玻璃基板1容易相對於玻璃支撐面3而滑動(玻璃基板1的支撐態樣容易不穩定化)。The surface roughness Ra of the inorganic film (the calculated average roughness Ra specified in Japanese Industrial Standards (JIS) B0601) is preferably 100 nm or less, more preferably 80 nm or less, and still more preferably 50 nm or less. The best is below 10 nm. The reason for this is that if the surface roughness Ra is larger than 100 nm, it is easy to interpose an air layer between the glass substrate 1 and the glass support surface 3, and during the heat treatment, the glass substrate 1 is easily slid relative to the glass support surface 3 ( The support state of the glass substrate 1 is easily destabilized).

但是,若無機皮膜的表面粗糙度Ra過小,則於熱處理時,玻璃基板1對無機皮膜的密接力過高,於熱處理後,難以將玻璃基板1自支撐構件2分離。因此,無機皮膜的表面粗糙度Ra較佳為設為1.0 nm以上,更佳為設為2.0 nm以上,進而更佳為設為3.0 nm以上。再者,無機皮膜的表面粗糙度Ra可使用觸針式表面粗糙度計或原子力顯微鏡(Atomic Force Microscope,AFM)等進行測定。However, when the surface roughness Ra of the inorganic film is too small, the adhesion of the glass substrate 1 to the inorganic film during the heat treatment is too high, and it is difficult to separate the glass substrate 1 from the support member 2 after the heat treatment. Therefore, the surface roughness Ra of the inorganic film is preferably 1.0 nm or more, more preferably 2.0 nm or more, and still more preferably 3.0 nm or more. Further, the surface roughness Ra of the inorganic film can be measured using a stylus type surface roughness meter or an atomic force microscope (AFM).

若考量無機皮膜的形成成本或強度,則無機皮膜的厚度較佳為500 nm以下,更佳為400 nm以下,最佳為300 nm以下。但是,若無機皮膜的厚度過小,則無法有效地享有相對於熱處理後的支撐構件2而言的玻璃基板1的分離性提高效果。因此,無機皮膜的厚度較佳為設為5 nm以上。When the formation cost or strength of the inorganic film is considered, the thickness of the inorganic film is preferably 500 nm or less, more preferably 400 nm or less, and most preferably 300 nm or less. However, if the thickness of the inorganic film is too small, the effect of improving the separation property of the glass substrate 1 with respect to the support member 2 after heat treatment cannot be effectively obtained. Therefore, the thickness of the inorganic film is preferably set to 5 nm or more.

[熱處理裝置] 如圖2所示,熱處理裝置10包括:玻璃腔室11、以載置玻璃架12的狀態相對於玻璃腔室11升降移動的升降台13、收納玻璃腔室11的爐壁14、及自外部對玻璃腔室11進行加熱的加熱器15。該熱處理裝置10配設於潔淨室(clean room)內。簡言之,於潔淨室內執行熱處理步驟。[Heat Treatment Apparatus] As shown in FIG. 2, the heat treatment apparatus 10 includes a glass chamber 11, a lifting table 13 that moves up and down with respect to the glass chamber 11 in a state in which the glass frame 12 is placed, and a furnace wall 14 that houses the glass chamber 11. And a heater 15 that heats the glass chamber 11 from the outside. The heat treatment apparatus 10 is disposed in a clean room. Briefly, the heat treatment step is performed in a clean room.

玻璃腔室11呈將下端開口的有蓋筒狀,其內部具有熱處理空間S。該玻璃腔室11是藉由將石英玻璃一體成形而形成為有蓋筒狀,由無接縫的連續的面劃分而形成熱處理空間S。The glass chamber 11 has a lid-shaped cylindrical shape with a lower end open, and has a heat treatment space S inside. The glass chamber 11 is formed into a cylindrical shape by integrally molding quartz glass, and is formed by a continuous surface having no joints to form a heat treatment space S.

玻璃架12具有於上下方向上設置為多段狀的多個收容部16,各收容部16是由立設於升降台13上的至少一對柱部12a、柱部12a及可相對於柱部12a、柱部12a裝卸地進行安裝的擱板12b劃分形成。柱部12a及擱板12b均是由石英玻璃形成。於本實施形態中,採用格子狀的框體作為擱板12b,於擱板12b的上表面設置有多個銷狀突起。並且,自下方側支撐著橫姿勢的玻璃基板1的支撐構件2(以下,亦將其稱為「組件(assembly)」)藉由銷狀突起而自下方側受到支撐。The glass frame 12 has a plurality of accommodating portions 16 that are provided in a plurality of stages in the vertical direction. Each of the accommodating portions 16 is formed by at least a pair of column portions 12a, column portions 12a, and column portions 12a that are erected on the lifting table 13. The shelf 12b to which the column portion 12a is detachably attached is formed. Both the column portion 12a and the shelf 12b are formed of quartz glass. In the present embodiment, a lattice-shaped frame is used as the shelf 12b, and a plurality of pin-shaped projections are provided on the upper surface of the shelf 12b. Further, the support member 2 (hereinafter also referred to as "assembly") of the glass substrate 1 supporting the lateral posture from the lower side is supported by the lower side from the pin-like projection.

升降台13具有載置玻璃架12的石英玻璃製的載置部13a,當該載置部13a位於上升位置時,玻璃腔室11的下端開口部被阻塞,而使玻璃架12配置於熱處理空間S內。另一方面,當載置部13a下降至圖示外的下降位置時,對載置於載置部13a的玻璃架12(的各收容部16)進行組件的裝載及卸載。The lifting table 13 has a mounting portion 13a made of quartz glass on which the glass frame 12 is placed. When the placing portion 13a is at the raised position, the lower end opening portion of the glass chamber 11 is blocked, and the glass frame 12 is disposed in the heat treatment space. S inside. On the other hand, when the placing portion 13a is lowered to the lowering position outside the drawing, the loading and unloading of the components is performed on (the respective housing portions 16) of the glass holder 12 placed on the placing portion 13a.

爐壁14呈將下端開口的有蓋筒狀,其整體是由耐火物構成。於爐壁14的側部內壁面及上部內壁面(頂面)分別安裝有加熱器15。作為加熱器15,例如使用鎳鉻合金(nichrome)系發熱體所代表的金屬系發熱體。The furnace wall 14 has a lid-shaped tubular shape with a lower end open, and the whole is made of a refractory. A heater 15 is attached to each of the side inner wall surface and the upper inner wall surface (top surface) of the furnace wall 14. As the heater 15, for example, a metal-based heating element represented by a nichrome-based heating element is used.

雖省略圖示,熱處理裝置10中亦可另行設置自外部對玻璃腔室11進行冷卻的冷卻單元(例如送風機)。藉由預先設置此種冷卻單元,可效率良好地對經加熱器15加熱的熱處理空間S的環境進行冷卻。Although not shown in the drawings, a cooling unit (for example, a blower) that cools the glass chamber 11 from the outside may be separately provided in the heat treatment apparatus 10. By providing such a cooling unit in advance, the environment of the heat treatment space S heated by the heater 15 can be efficiently cooled.

其次,對藉由具有以上構成的熱處理裝置10而執行的熱處理步驟進行說明。熱處理步驟中,依序實施升溫步驟(step)、保溫步驟及降溫步驟。Next, a heat treatment step performed by the heat treatment apparatus 10 having the above configuration will be described. In the heat treatment step, a temperature step, a heat retention step, and a temperature reduction step are sequentially performed.

在實施升溫步驟之前,使升降台13的載置部13a位於下降位置,將組件裝載於玻璃架12的各收容部16後,使升降台13上升移動而將玻璃架12配置於玻璃腔室11內的熱處理空間S。再者,組件相對於各收容部16的裝載(及熱處理後組件自各收容部16的卸載)例如是使用自下方側支撐著組件的機械叉臂(robot fork)來進行。此時,支撐構件2的下部是由面積大的基底部5構成,藉此而充分確保機械叉臂對支撐構件2的支撐面積。因此,可精度良好地執行組件相對於各收容部16的裝載及卸載。Before the temperature raising step is performed, the placing portion 13a of the lifting platform 13 is placed at the lowered position, and the assembly is placed on each of the housing portions 16 of the glass holder 12, and then the lifting table 13 is moved upward to arrange the glass frame 12 in the glass chamber 11 Heat treatment space S inside. Further, the loading of the components with respect to the respective housing portions 16 (and the unloading of the components after heat treatment from the respective housing portions 16) is performed, for example, using a robot fork that supports the assembly from the lower side. At this time, the lower portion of the support member 2 is constituted by the base portion 5 having a large area, whereby the support area of the mechanical fork arm to the support member 2 is sufficiently ensured. Therefore, the loading and unloading of the components with respect to the respective housing portions 16 can be performed with high precision.

升溫步驟是使玻璃基板1的溫度上升至既定溫度的步驟,此處,以玻璃基板1以3℃/min以上、較佳為5℃/min以上、進而佳為7℃/min以上的升溫速度進行升溫的方式調整加熱器15的輸出。但是,若玻璃基板1的升溫速度過快,則玻璃基板1出現破損等的可能性高,因此將升溫速度設為較佳為30℃/min以下、更佳為20℃/min以下。The temperature rising step is a step of raising the temperature of the glass substrate 1 to a predetermined temperature. Here, the temperature rise rate of the glass substrate 1 is 3° C./min or more, preferably 5° C./min or more, and more preferably 7° C./min or more. The output of the heater 15 is adjusted in such a manner as to increase the temperature. However, when the temperature rise rate of the glass substrate 1 is too fast, there is a high possibility that the glass substrate 1 is damaged or the like. Therefore, the temperature increase rate is preferably 30° C./min or less, more preferably 20° C./min or less.

並且,於升溫步驟中,自外部將玻璃腔室11(內的熱處理空間S)加熱至玻璃基板1的溫度成為玻璃基板1的應變點以下的溫度為止。具體而言,當將玻璃基板1的應變點設為T[單位:℃]時,將玻璃腔室11加熱至玻璃基板1的溫度成為較佳為(T-30℃)以下、更佳為(T-50℃)以下、進而更佳為(T-80℃)以下、最佳為(T-100℃)以下為止。藉此,可一邊盡可能地防止玻璃基板1產生不期望的形狀變化,一邊降低玻璃基板1的熱收縮率。但是,若玻璃基板1未得到充分加熱,則無法適當降低玻璃基板1的熱收縮率。因此,將玻璃腔室11加熱至玻璃基板1的溫度成為(T-200℃)以上為止。In the heating step, the glass chamber 11 (the heat treatment space S in the inside) is heated from the outside until the temperature of the glass substrate 1 becomes the temperature equal to or lower than the strain point of the glass substrate 1. Specifically, when the strain point of the glass substrate 1 is T [unit: ° C], the temperature at which the glass chamber 11 is heated to the glass substrate 1 is preferably (T-30 ° C) or less, more preferably ( T-50 ° C) or less, more preferably (T-80 ° C) or less, and most preferably (T-100 ° C) or less. Thereby, the heat shrinkage rate of the glass substrate 1 can be reduced while preventing the undesired shape change of the glass substrate 1 as much as possible. However, if the glass substrate 1 is not sufficiently heated, the heat shrinkage rate of the glass substrate 1 cannot be appropriately lowered. Therefore, the glass chamber 11 is heated until the temperature of the glass substrate 1 becomes (T-200 ° C) or more.

於保溫步驟中,將經加熱至既定溫度的玻璃基板1於維持所述既定溫度的狀態下保持既定時間(具體而言為5分鐘~120分鐘)。藉此,可一邊盡可能地降低於玻璃基板1彼此間產生形狀的偏差的可能性,一邊適當地降低各個玻璃基板1的熱收縮率。In the heat retention step, the glass substrate 1 heated to a predetermined temperature is maintained for a predetermined period of time (specifically, 5 minutes to 120 minutes) while maintaining the predetermined temperature. Thereby, it is possible to appropriately reduce the heat shrinkage ratio of each of the glass substrates 1 while reducing the possibility of variation in shape between the glass substrates 1 as much as possible.

於降溫步驟中,使玻璃基板1的溫度緩緩下降。降溫速度設為較佳為1℃/min以上,更佳為2℃/min以上,進而更佳為5℃/min以上。藉此,可一邊縮短降溫步驟的處理時間,一邊提高玻璃基板1的生產性。但是,若降溫速度過快,則無法充分降低玻璃基板1的熱收縮率,此外,玻璃基板1會產生翹曲等而玻璃基板1的形狀精度容易下降。因此,降溫速度較佳為20℃/min以下,進而佳為15℃/min以下。In the temperature lowering step, the temperature of the glass substrate 1 is gradually lowered. The cooling rate is preferably 1 ° C / min or more, more preferably 2 ° C / min or more, and still more preferably 5 ° C / min or more. Thereby, the productivity of the glass substrate 1 can be improved while shortening the processing time of the temperature decreasing step. However, if the temperature drop rate is too fast, the heat shrinkage rate of the glass substrate 1 cannot be sufficiently lowered, and the glass substrate 1 is warped or the like, and the shape accuracy of the glass substrate 1 is likely to be lowered. Therefore, the temperature drop rate is preferably 20 ° C / min or less, and more preferably 15 ° C / min or less.

於上述熱處理步驟中,尤其是降溫步驟中,因玻璃基板1的各部中的降溫速度差而容易於玻璃基板1的面內產生溫度分佈,伴隨於此,有玻璃基板1的周緣部1b翹起的傾向(參照圖3)。本發明中,於以橫姿勢配置的玻璃基板1中使中央部1a位於較周緣部1b更高的位置的狀態下對玻璃基板1施加熱處理,故若伴隨於熱處理而玻璃基板1的周緣部1b以所述態樣翹起,則可減小於中央部1a與周緣部1b之間預先設定的高低差,可於熱處理後獲得平坦性優異的玻璃基板1。In the heat treatment step, in particular, in the temperature lowering step, temperature distribution is likely to occur in the surface of the glass substrate 1 due to a difference in temperature drop rate in each portion of the glass substrate 1, and accordingly, the peripheral portion 1b of the glass substrate 1 is lifted up. The tendency (see Figure 3). In the present invention, in the glass substrate 1 disposed in the lateral position, the central portion 1a is placed in a higher position than the peripheral portion 1b, and heat treatment is applied to the glass substrate 1. Therefore, the peripheral portion 1b of the glass substrate 1 is accompanied by heat treatment. When the shape is lifted up, the height difference between the center portion 1a and the peripheral portion 1b can be reduced, and the glass substrate 1 having excellent flatness can be obtained after the heat treatment.

以上,對本發明的實施形態的玻璃基板1的熱處理方法進行了說明,但本發明的實施形態並非限定於此,能夠在不脫離本發明的主旨的範圍內施加各種變更。尤其是能夠對熱處理時的支撐構件2支撐玻璃基板1的態樣施加各種變更。Though the heat treatment method of the glass substrate 1 of the embodiment of the present invention has been described above, the embodiment of the present invention is not limited thereto, and various modifications can be made without departing from the scope of the invention. In particular, various modifications can be made to the aspect in which the support member 2 at the time of heat treatment supports the glass substrate 1.

例如,以上所說明的實施形態中,設為利用具有與作為熱處理對象的玻璃基板1相同程度的大小的玻璃支撐面3的支撐構件2而自下方側支撐玻璃基板1,但玻璃支撐面3亦可如圖4所示,較作為熱處理對象的玻璃基板1大,亦可如圖5所示,較作為熱處理對象的玻璃基板1小。For example, in the embodiment described above, the glass substrate 1 is supported from the lower side by the support member 2 having the glass support surface 3 having the same size as the glass substrate 1 to be heat-treated, but the glass support surface 3 is also As shown in FIG. 4, the glass substrate 1 which is a heat processing target is larger, and as shown in FIG. 5, it is smaller than the glass substrate 1 which is a heat processing target.

尤其,若如圖5(後述的圖6及圖7亦同樣)所示,設為利用具有較玻璃基板1小的玻璃支撐面3的支撐構件2自下方側支撐玻璃基板1,則玻璃基板1的周緣部1b伸出至玻璃支撐面3的外側,形成不與玻璃支撐面3接觸的伸出部P。該伸出部P可有效用作熱處理後將玻璃基板1自支撐構件2分離時的把手部,故可容易地將玻璃基板1自支撐構件2分離。因此,可減少作為熱處理對象的玻璃基板1相對於支撐構件2的設定(所述組件的製作)、組件相對於熱處理裝置10的裝載、熱處理、組件自熱處理裝置10的卸載、及玻璃基板1與支撐構件2的分離這一系列的熱處理製程所需要的週期時間(cycle time),從而效率良好地實施熱處理步驟。In particular, as shown in FIG. 5 (the same as FIG. 6 and FIG. 7 described later), the glass substrate 1 is supported by the support member 2 having the glass support surface 3 smaller than the glass substrate 1 from the lower side. The peripheral portion 1b protrudes to the outside of the glass supporting surface 3, and forms a projecting portion P that does not come into contact with the glass supporting surface 3. The projecting portion P can be effectively used as a handle portion when the glass substrate 1 is separated from the support member 2 after the heat treatment, so that the glass substrate 1 can be easily separated from the support member 2. Therefore, the setting of the glass substrate 1 as the heat treatment target relative to the support member 2 (the fabrication of the assembly), the loading of the assembly with respect to the heat treatment apparatus 10, the heat treatment, the unloading of the assembly from the heat treatment apparatus 10, and the glass substrate 1 can be reduced. The support member 2 separates the cycle time required for this series of heat treatment processes, thereby performing the heat treatment step efficiently.

另外,以上設為利用具有形成為凸曲面(凸球面)狀的玻璃支撐面3的支撐構件2自下方側支撐玻璃基板1,但亦可如圖6及圖7所示,設為利用具有形成為平坦面的玻璃支撐面3的支撐構件2自下方側支撐玻璃基板1。於該情況下,以玻璃基板1的中央部1a位於較周緣部1b更高的位置的方式(換言之,以玻璃基板1的周緣部1b向下方垂下的方式)使玻璃支撐面3較玻璃基板1小。如此,若利用形成為平坦面的玻璃支撐面3支撐玻璃基板1,則與利用形成為凸曲面狀的玻璃支撐面3支撐玻璃基板1的情況相比,可有效地減小熱處理的過程中玻璃基板1相對於玻璃支撐面3滑動,其結果於玻璃基板1的下表面產生劃傷等微小缺陷的可能性。In addition, although the glass substrate 1 is supported from the lower side by the support member 2 which has the glass support surface 3 formed in the convex curved surface (convex spherical surface), it can also be formed by the use as shown in FIG. The support member 2 which is the flat glass support surface 3 supports the glass substrate 1 from the lower side. In this case, the glass support surface 3 is made larger than the glass substrate 1 so that the central portion 1a of the glass substrate 1 is located higher than the peripheral edge portion 1b (in other words, the peripheral portion 1b of the glass substrate 1 is suspended downward). small. As described above, when the glass substrate 1 is supported by the glass supporting surface 3 formed as a flat surface, the glass can be effectively reduced in the process of heat treatment as compared with the case where the glass substrate 1 is supported by the glass supporting surface 3 formed in a convex curved shape. The substrate 1 slides with respect to the glass support surface 3, and as a result, there is a possibility that minute defects such as scratches are generated on the lower surface of the glass substrate 1.

再者,如圖5~圖7所示,於使玻璃基板1的周緣部1b伸出至玻璃支撐面3的外側來支撐玻璃基板1的情況下,較佳為以熱處理的過程中玻璃基板1的端面1c不與其他構件(玻璃架12的擱板12b、支撐構件2的基底部5等)接觸的方式來決定玻璃基板1的伸出量。其原因在於,若玻璃基板1的端面1c與其他構件接觸,則容易產生以端面1c為起點的破損等。Further, as shown in FIGS. 5 to 7 , when the peripheral edge portion 1 b of the glass substrate 1 is extended to the outside of the glass supporting surface 3 to support the glass substrate 1 , it is preferable to heat the glass substrate 1 during the heat treatment. The end surface 1c determines the amount of protrusion of the glass substrate 1 so as not to come into contact with other members (the shelf 12b of the glass holder 12, the base portion 5 of the support member 2, and the like). The reason for this is that when the end surface 1c of the glass substrate 1 is in contact with another member, breakage or the like starting from the end surface 1c is likely to occur.

於以上所說明的實施形態中,尤其是圖1及圖7所示的實施形態中,一體地形成構成支撐構件2的支撐部4與基底部5,亦可藉由利用適當的手段將個別地形成的支撐部4與基底部5結合使其一體化而形成支撐構件2。於該情況下,支撐部4與基底部5可利用相同種類的材料來形成,亦可利用彼此不同的材料來形成,具有玻璃支撐面3的支撐部4較佳為利用具有與玻璃基板1同等的線膨脹係數的材料(具體而言,30℃~380℃下的與玻璃基板1的線膨脹係數差為5×10-7 /℃以內的材料)來形成,特佳為利用具有與玻璃基板1相同的組成的玻璃來形成。In the embodiment described above, in particular, in the embodiment shown in FIGS. 1 and 7, the support portion 4 and the base portion 5 constituting the support member 2 are integrally formed, and may be individually used by appropriate means. The formed support portion 4 is joined to the base portion 5 to be integrated to form the support member 2. In this case, the support portion 4 and the base portion 5 may be formed of the same type of material, or may be formed of materials different from each other, and the support portion 4 having the glass support surface 3 preferably has the same function as the glass substrate 1. The material of the coefficient of linear expansion (specifically, a material having a difference in linear expansion coefficient from the glass substrate 1 of 5 × 10 -7 /° C. at 30 ° C to 380 ° C) is particularly preferably used with a glass substrate. A glass of the same composition is formed.

另外,本發明的玻璃基板1的熱處理方法於使用圖3所示的熱處理裝置10以外的熱處理裝置,例如具有輥式輸送機(roller conveyor)、帶式輸送機(belt conveyor)或者移動樑(walking beam)等搬送機構的線上型(on-line type)熱處理裝置,以及批次式、連續搬送式或者逐片方式等的熱處理裝置對玻璃基板1施加熱處理時亦可較佳地應用。再者,於使用搬送機構中採用了輥式搬送機的線上型熱處理裝置對玻璃基板1施加熱處理時,如圖1或圖7所示,較佳為利用具有較玻璃支撐面3大的基底部5的支撐構件2自下方側支撐作為熱處理對象的玻璃基板1。其原因在於,可增大構成輥式輸送機的輥的配置間距(減少輥的設置根數),故容易享有以下優點:可實現熱處理裝置的成本降低、可容易地進行輥彼此間的高度水準調整、可盡可能地防止搬送時的玻璃基板1(組件)的蜿蜒等。Further, the heat treatment method of the glass substrate 1 of the present invention is a heat treatment apparatus other than the heat treatment apparatus 10 shown in FIG. 3, for example, a roller conveyor, a belt conveyor, or a moving beam (walking) An on-line type heat treatment device such as a beam) and a heat treatment device such as a batch type, a continuous transfer type, or a sheet-by-chip method can also be preferably used when heat treatment is applied to the glass substrate 1. Further, when a heat treatment is applied to the glass substrate 1 by using an in-line heat treatment apparatus using a roller conveyor in the transport mechanism, as shown in FIG. 1 or FIG. 7, it is preferable to use a base portion having a larger glass support surface 3. The support member 2 of 5 supports the glass substrate 1 as a heat processing target from the lower side. The reason for this is that the arrangement pitch of the rollers constituting the roller conveyor can be increased (the number of the rollers is reduced), so that it is easy to enjoy the advantage that the cost of the heat treatment device can be reduced, and the height level between the rollers can be easily performed. The adjustment can prevent the flaw of the glass substrate 1 (component) at the time of conveyance as much as possible.

進而,本發明的玻璃基板1的熱處理方法於對如下的玻璃基板1施加熱處理時亦可較佳地應用,所述玻璃基板1是將藉由溢流下拉法以外的方法,例如流孔下拉(slot down draw)法、輥壓(roll out)法、浮式(float)法、上拉(updraw)法、再拉(redraw)法等而獲得的玻璃膜切斷為既定尺寸而成。 [實施例]Further, the heat treatment method of the glass substrate 1 of the present invention can also be preferably applied to a heat treatment of the glass substrate 1 which is to be pulled down by a method other than the overflow down-draw method, for example, a flow hole ( The glass film obtained by the slot down draw method, the roll out method, the float method, the updraw method, the redraw method, or the like is cut into a predetermined size. [Examples]

為了證實本發明的有用性,對於應用本發明的方法對玻璃基板施加熱處理的情況(具體而言為對以本申請案的圖7所示的態樣受到支撐的玻璃基板施加熱處理的情況,以下亦將其稱為「實施例」)、及利用專利文獻1所揭示的方法對玻璃基板施加熱處理的情況(以下亦將其稱為「比較例」),分別確認玻璃基板的翹曲量以哪種程度發生變化。In order to confirm the usefulness of the present invention, in the case where heat treatment is applied to the glass substrate by applying the method of the present invention (specifically, heat treatment is applied to the glass substrate supported by the aspect shown in FIG. 7 of the present application, In the case where heat treatment is applied to the glass substrate by the method disclosed in Patent Document 1 (hereinafter also referred to as "Comparative Example"), the amount of warpage of the glass substrate is confirmed. The degree of change has changed.

於實施確認試驗時,實施例及比較例均是各準備7個包含玻璃基板及自下方側支撐該基板的支撐構件的組件,使用圖3中示意性示出的熱處理裝置10對該些施加熱處理。熱處理條件為:以10℃/min的升溫速度使室溫程度的玻璃基板升溫至560℃後,以560℃保持60分鐘,進而,然後以3℃/min的降溫速度使玻璃基板降溫至室溫。In the case of carrying out the confirmation test, each of the examples and the comparative examples was prepared by assembling seven support members each including a glass substrate and supporting the substrate from the lower side, and applying heat treatment using the heat treatment apparatus 10 schematically shown in FIG. . The heat treatment conditions were such that the glass substrate at room temperature was heated to 560 ° C at a temperature increase rate of 10 ° C / min, and then held at 560 ° C for 60 minutes, and then the glass substrate was cooled to room temperature at a temperature drop rate of 3 ° C / min. .

作為確認試驗中使用的作為熱處理對象(測定對象)的玻璃基板,準備厚度100 μm的320 mm×400 nm的矩形形狀玻璃基板(具體而言,日本電氣硝子股份有限公司製造的無鹼玻璃基板OA-10G)。該玻璃基板的主要物性為30℃~380℃下的線膨脹係數:38×10-7 /℃、應變點:650℃、徐冷點:710℃。A rectangular glass substrate of 320 mm × 400 nm having a thickness of 100 μm is prepared as a glass substrate to be subjected to a heat treatment target (measurement target) used in the confirmation test (specifically, an alkali-free glass substrate OA manufactured by Nippon Electric Glass Co., Ltd.) -10G). The main physical properties of the glass substrate were linear expansion coefficients at 30 ° C to 380 ° C: 38 × 10 -7 / ° C, strain points: 650 ° C, and cold spots: 710 ° C.

作為實施例的支撐構件,準備利用與作為測定對象的玻璃基板同樣的無鹼玻璃基板(OA-10G)製作而成者。具體而言,準備藉由將厚度1.5 mm的300 mm×380 mm的矩形形狀玻璃基板固定於厚度0.5 mm的740 mm×940 mm的矩形形狀玻璃基板的上表面,而可於使作為測定對象的玻璃基板的中央部位於較周緣部更高的位置的狀態下自下方側加以支撐的剖面凸形狀的支撐構件。再者,作為配置於上側的矩形形狀玻璃基板,使用於其上表面(玻璃支撐面)藉由濺鍍法而形成有厚度180 nm的無機皮膜(ITO皮膜)者。The support member of the example was prepared by using an alkali-free glass substrate (OA-10G) similar to the glass substrate to be measured. Specifically, it is prepared to fix a rectangular-shaped glass substrate of 300 mm × 380 mm having a thickness of 1.5 mm on the upper surface of a 740 mm × 940 mm rectangular-shaped glass substrate having a thickness of 0.5 mm, thereby being able to be used as a measurement target. A support member having a convex shape having a convex shape supported from the lower side in a state where the central portion of the glass substrate is located higher than the peripheral portion. Further, as the rectangular glass substrate disposed on the upper side, an inorganic film (ITO film) having a thickness of 180 nm was formed on the upper surface (glass supporting surface) by sputtering.

與此相對,作為比較例的支撐構件,準備如下的矩形形狀玻璃基板(具體而言,厚度0.5 mm的740 mm×940 mm的玻璃基板(OA-10G)),其中,玻璃支撐面平坦,且玻璃支撐面的面積大於作為測定對象的玻璃基板,並且於玻璃支撐面藉由濺鍍法而形成有厚度180 nm的ITO皮膜。因此,比較例的玻璃基板是於其中央部與周緣部之間不存在高低差的狀態下施加熱處理。On the other hand, as a support member of a comparative example, a rectangular-shaped glass substrate (specifically, a 740 mm × 940 mm glass substrate (OA-10G) having a thickness of 0.5 mm) was prepared, in which the glass support surface was flat, and The glass support surface has a larger area than the glass substrate to be measured, and an ITO film having a thickness of 180 nm is formed on the glass support surface by a sputtering method. Therefore, the glass substrate of the comparative example is subjected to heat treatment in a state where there is no height difference between the central portion and the peripheral portion.

將所述確認試驗的試驗結果示於下述表1中。再者,表1中,將實施例的玻璃基板及比較例的玻璃基板分別表示為試樣No.1-No.7及試樣No.8-No.14。The test results of the confirmation test are shown in Table 1 below. In Table 1, the glass substrate of the example and the glass substrate of the comparative example are shown as sample No. 1-No. 7 and sample No. 8-No. 14, respectively.

[表1] [Table 1]

如根據表1亦明確般,實施例中,所有試樣的熱處理後的翹曲量的值小,為100 μm以下,翹曲量的平均值大大降低。另外,翹曲量的標准偏差亦大大降低。與此相對,比較例中,所有試樣於熱處理後翹曲量變大,另外,翹曲量的標准偏差亦增大。因此,本發明的熱處理方法可謂於改善各個玻璃基板的平坦性的方面、進而於抑制玻璃基板彼此間平坦性產生偏差的方面有用。As is also clear from Table 1, in the examples, the values of the amount of warpage after heat treatment of all the samples were as small as 100 μm or less, and the average value of the amount of warpage was greatly lowered. In addition, the standard deviation of the amount of warpage is also greatly reduced. On the other hand, in the comparative example, the amount of warpage of all the samples increased after heat treatment, and the standard deviation of the amount of warpage also increased. Therefore, the heat treatment method of the present invention is useful for improving the flatness of each glass substrate and further suppressing variations in flatness between the glass substrates.

與所述確認試驗一併,對伴隨於熱處理而玻璃基板以哪種程度熱收縮、即玻璃基板的熱收縮率進行評價。藉由以下的(1)-(5)所示的順序測定、算出玻璃基板的熱收縮率。 (1)如圖8A所示,準備160 mm×30 mm的長條狀試樣G作為玻璃基板的試樣。 (2)使用粒度1000的耐水研磨紙,於自長條狀試樣G的長邊方向的兩端部向長邊方向的中央部偏移20 mm~40 mm左右的位置形成沿短邊方向延伸的標記M、標記M。 (3)如圖8B所示,沿長邊方向將形成有標記M的長條狀試樣G一分為二,製作試樣片Ga、試樣片Gb。 (4)藉由熱處理裝置僅對兩試樣片Ga、試樣片Gb中任意一個試樣片(此處為試樣片Gb)進行熱處理。熱處理是藉由以5℃/min的升溫速度自常溫升溫至500℃→以500℃保持1小時→以5℃/min的降溫速度降溫至室溫的順序來實施。 (5)於以所述態樣對試樣片Gb施加熱處理後,如圖8C所示,將未施加熱處理的試樣片Ga、與施加了熱處理的試樣片Gb並列配置,利用雷射顯微鏡讀取兩試樣片Ga、試樣片Gb間的標記M的位置偏移量ΔL1 、位置偏移量ΔL2 ,基於下述數式算出熱收縮率[單位:ppm]。再者,下述數式中的L0 為熱處理前的標記M、標記M間的隔開距離。   熱收縮率=[{ΔL1 (μm)+ΔL2 (μm)}×103 ]/L0 (mm)In addition to the above-described confirmation test, the degree of thermal shrinkage of the glass substrate, that is, the heat shrinkage ratio of the glass substrate, was evaluated in accordance with the heat treatment. The heat shrinkage rate of the glass substrate was measured by the order shown by the following (1)-(5). (1) As shown in Fig. 8A, a long strip sample G of 160 mm × 30 mm was prepared as a sample of a glass substrate. (2) The water-resistant abrasive paper having a particle size of 1000 is formed to extend in the short-side direction at a position shifted from the both end portions in the longitudinal direction of the long-length sample G to the center portion in the longitudinal direction by about 20 mm to 40 mm. Mark M, mark M. (3) As shown in Fig. 8B, the long sample G on which the mark M is formed is divided into two in the longitudinal direction, and the sample piece Ga and the sample piece Gb are produced. (4) Only one of the two sample pieces Ga and the sample piece Gb (here, the sample piece Gb) is heat-treated by the heat treatment apparatus. The heat treatment was carried out by raising the temperature from normal temperature to 500 ° C at a temperature increase rate of 5 ° C / min → holding at 500 ° C for 1 hour → cooling to room temperature at a temperature drop rate of 5 ° C / min. (5) After heat treatment is applied to the sample piece Gb in the above-described manner, as shown in FIG. 8C, the sample piece Ga to which the heat treatment is not applied is placed in parallel with the sample piece Gb to which the heat treatment is applied, and the laser microscope is used. The positional shift amount ΔL 1 and the positional shift amount ΔL 2 of the mark M between the two sample pieces Ga and the sample piece Gb are read, and the heat shrinkage rate [unit: ppm] is calculated based on the following formula. Further, L 0 in the following formula is a distance between the mark M and the mark M before the heat treatment. Heat shrinkage rate = [{ΔL 1 (μm) + ΔL 2 (μm)} × 10 3 ] / L 0 (mm)

藉由所述順序測定、算出的玻璃基板的熱收縮率均為10 ppm以下而成為非常小的值。The heat shrinkage rate of the glass substrate measured and measured in the above-described order was 10 ppm or less and became a very small value.

藉由以上可知:本發明於一邊降低板厚為300 μm以下的玻璃基板的熱收縮率,一邊改善該玻璃基板的平坦性的方面有用。As described above, the present invention is useful in reducing the heat shrinkage rate of a glass substrate having a thickness of 300 μm or less while improving the flatness of the glass substrate.

1‧‧‧玻璃基板
1a‧‧‧中央部
1b‧‧‧周緣部
1c‧‧‧端面
2‧‧‧支撐構件
3‧‧‧玻璃支撐面
4‧‧‧支撐部
5‧‧‧基底部
10‧‧‧熱處理裝置
11‧‧‧玻璃腔室
12‧‧‧玻璃架
12a‧‧‧柱部
12b‧‧‧擱板
13‧‧‧升降台
13a‧‧‧載置部
14‧‧‧爐壁
15‧‧‧加熱器
16‧‧‧收容部
G‧‧‧長條狀試樣
Ga、Gb‧‧‧試樣片
L0‧‧‧熱處理前的標記M、標記M間的隔開距離
M‧‧‧標記
P‧‧‧伸出部
S‧‧‧熱處理空間
ΔL1、ΔL2‧‧‧位置偏移量
1‧‧‧ glass substrate
1a‧‧‧Central Department
1b‧‧‧The Peripheral Department
1c‧‧‧ end face
2‧‧‧Support members
3‧‧‧glass support surface
4‧‧‧Support
5‧‧‧ base
10‧‧‧ Heat treatment unit
11‧‧‧ glass chamber
12‧‧‧glass shelf
12a‧‧‧ pillar
12b‧‧‧Shelf
13‧‧‧ Lifting table
13a‧‧‧Loading Department
14‧‧‧ furnace wall
15‧‧‧heater
16‧‧‧Receiving Department
G‧‧‧Long strip sample
Ga, Gb‧‧‧ Samples
L 0 ‧‧‧ Separation distance between mark M and mark M before heat treatment
M‧‧‧ mark
P‧‧‧Outreach
S‧‧‧ Heat treatment space ΔL 1 , ΔL 2 ‧‧‧ position offset

圖1A是示意性地表示執行本發明的熱處理方法時的玻璃基板的支撐態樣的平面圖。 圖1B是沿著圖1A中示出的箭頭X-X線的剖面圖。 圖2是實施本發明的熱處理方法時所使用的熱處理裝置的概略剖面圖。 圖3是示意性地表示伴隨於熱處理而於玻璃基板的周緣部產生的變形的形態的放大圖。 圖4是表示執行本發明的熱處理方法時的玻璃基板的支撐態樣的變形例的剖面圖。 圖5是表示執行本發明的熱處理方法時的玻璃基板的支撐態樣的變形例的剖面圖。 圖6是表示執行本發明的熱處理方法時的玻璃基板的支撐態樣的變形例的剖面圖。 圖7是表示執行本發明的熱處理方法時的玻璃基板的支撐態樣的變形例的剖面圖。 圖8A是用以說明玻璃基板的熱收縮率的測定順序的概要圖。 圖8B是用以說明玻璃基板的熱收縮率的測定順序的概要圖。 圖8C是用以說明玻璃基板的熱收縮率的測定順序的概要圖。Fig. 1A is a plan view schematically showing a supporting state of a glass substrate when the heat treatment method of the present invention is performed. Fig. 1B is a cross-sectional view taken along the line X-X of Fig. 1A. Fig. 2 is a schematic cross-sectional view showing a heat treatment apparatus used in carrying out the heat treatment method of the present invention. 3 is an enlarged view schematically showing a form of deformation occurring in a peripheral portion of a glass substrate in accordance with heat treatment. 4 is a cross-sectional view showing a modification of the supporting state of the glass substrate when the heat treatment method of the present invention is performed. FIG. 5 is a cross-sectional view showing a modification of the supporting state of the glass substrate when the heat treatment method of the present invention is performed. Fig. 6 is a cross-sectional view showing a modification of the supporting state of the glass substrate when the heat treatment method of the present invention is performed. FIG. 7 is a cross-sectional view showing a modification of the supporting state of the glass substrate when the heat treatment method of the present invention is performed. 8A is a schematic view for explaining a procedure for measuring a heat shrinkage ratio of a glass substrate. 8B is a schematic view for explaining a procedure for measuring the heat shrinkage rate of the glass substrate. 8C is a schematic view for explaining a procedure for measuring the heat shrinkage rate of the glass substrate.

1‧‧‧玻璃基板 1‧‧‧ glass substrate

1a‧‧‧中央部 1a‧‧‧Central Department

1b‧‧‧周緣部 1b‧‧‧The Peripheral Department

1c‧‧‧端面 1c‧‧‧ end face

2‧‧‧支撐構件 2‧‧‧Support members

3‧‧‧玻璃支撐面 3‧‧‧glass support surface

4‧‧‧支撐部 4‧‧‧Support

5‧‧‧基底部 5‧‧‧ base

Claims (8)

一種玻璃基板的熱處理方法,其為用以降低板厚為300 μm以下的玻璃基板的熱收縮率的熱處理方法,所述玻璃基板的熱處理方法的特徵在於: 對以橫姿勢配置的所述玻璃基板,於使其中央部位於較其周緣部更高的位置的狀態下,以其應變點以下的溫度進行加熱。A heat treatment method for a glass substrate, which is a heat treatment method for reducing a heat shrinkage rate of a glass substrate having a thickness of 300 μm or less, wherein the glass substrate heat treatment method is characterized by: the glass substrate disposed in a lateral posture The heating is performed at a temperature lower than the strain point in a state where the central portion thereof is located at a position higher than the peripheral portion. 如申請專利範圍第1項所述的玻璃基板的熱處理方法,其中,熱處理前的所述玻璃基板具有翹曲量為300 μm以下的翹曲部。The method for heat-treating a glass substrate according to the first aspect of the invention, wherein the glass substrate before the heat treatment has a warpage portion having a warpage amount of 300 μm or less. 如申請專利範圍第1項或第2項所述的玻璃基板的熱處理方法,其中,使所述玻璃基板的中央部位於在10 μm以上且1000 μm以下的範圍內較所述玻璃基板的周緣部更高的位置。The method for heat-treating a glass substrate according to the first or second aspect of the invention, wherein the central portion of the glass substrate is located in a range of 10 μm or more and 1000 μm or less in comparison with a peripheral portion of the glass substrate Higher position. 如申請專利範圍第1項至第3項中任一項所述的玻璃基板的熱處理方法,其中,藉由具有凸曲面狀的玻璃支撐面的支撐構件而自下方側支撐所述玻璃基板。The method for heat-treating a glass substrate according to any one of the first aspect, wherein the glass substrate is supported from a lower side by a support member having a convex glass-shaped support surface. 如申請專利範圍第4項所述的玻璃基板的熱處理方法,其中,使所述玻璃支撐面較所述玻璃基板小。The method for heat-treating a glass substrate according to claim 4, wherein the glass supporting surface is made smaller than the glass substrate. 如申請專利範圍第1項至第3項中任一項所述的玻璃基板的熱處理方法,其中,藉由具有形成為平坦面、且較所述玻璃基板小的玻璃支撐面的支撐構件而自下方側支撐所述玻璃基板。The method for heat-treating a glass substrate according to any one of claims 1 to 3, wherein the method further comprises a support member having a flat surface and a glass support surface smaller than the glass substrate. The lower side supports the glass substrate. 如申請專利範圍第1項至第6項中任一項所述的玻璃基板的熱處理方法,其中,所述玻璃基板用於可撓性元件或者用於隨身元件。The method for heat-treating a glass substrate according to any one of claims 1 to 6, wherein the glass substrate is used for a flexible member or for a portable member. 一種玻璃基板的製造方法,其包括: 玻璃基板製作步驟,成形具有300 μm以下的板厚的帶狀的玻璃膜,將所述玻璃膜切斷,藉此獲得板厚為300 μm以下的玻璃基板;以及 熱處理步驟,藉由如申請專利範圍第1項至第7項中任一項所述的玻璃基板的熱處理方法,對所述玻璃基板施加熱處理。A method for producing a glass substrate, comprising: a step of preparing a glass substrate, forming a strip-shaped glass film having a thickness of 300 μm or less, and cutting the glass film to obtain a glass substrate having a thickness of 300 μm or less And a heat treatment step of applying heat treatment to the glass substrate by a heat treatment method of the glass substrate according to any one of claims 1 to 7.
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