TW201731356A - Etching method of laminated body and method of manufacturing printed wiring substrate using the same can remove the metal residue between wiring at an inexpensive and simple steps in the semi-additive process of a two-layer flexible substrate - Google Patents

Etching method of laminated body and method of manufacturing printed wiring substrate using the same can remove the metal residue between wiring at an inexpensive and simple steps in the semi-additive process of a two-layer flexible substrate Download PDF

Info

Publication number
TW201731356A
TW201731356A TW105142053A TW105142053A TW201731356A TW 201731356 A TW201731356 A TW 201731356A TW 105142053 A TW105142053 A TW 105142053A TW 105142053 A TW105142053 A TW 105142053A TW 201731356 A TW201731356 A TW 201731356A
Authority
TW
Taiwan
Prior art keywords
metal layer
etching
copper
film
layer
Prior art date
Application number
TW105142053A
Other languages
Chinese (zh)
Other versions
TWI630855B (en
Inventor
淺川吉幸
永尾晴美
Original Assignee
住友金屬礦山股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 住友金屬礦山股份有限公司 filed Critical 住友金屬礦山股份有限公司
Publication of TW201731356A publication Critical patent/TW201731356A/en
Application granted granted Critical
Publication of TWI630855B publication Critical patent/TWI630855B/en

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067Etchants
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/18Acidic compositions for etching copper or alloys thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/26Acidic compositions for etching refractory metals
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/28Acidic compositions for etching iron group metals
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/44Compositions for etching metallic material from a metallic material substrate of different composition
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0137Materials
    • H05K2201/0145Polyester, e.g. polyethylene terephthalate [PET], polyethylene naphthalate [PEN]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0137Materials
    • H05K2201/0154Polyimide
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0779Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
    • H05K2203/0786Using an aqueous solution, e.g. for cleaning or during drilling of holes
    • H05K2203/0796Oxidant in aqueous solution, e.g. permanganate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

The present invention provides a method for manufacturing substrate. The method resolves the above issue of using a semi-additive method in the manufacture of two-layer flexible wiring boards. In the etching of a constituent comprising a substrate metal layer and a copper, the substrate metal layer is selectively dissolved without dissolving the copper, suppressing reduction of the wiring width of the copper wiring so as to provide the manufacturing method of substrate having high reliability without defects of broken and short circuits. The etching method of the laminated body is characterized in that at least one side of the insulating substrate is formed, without adhesive, with a substrate metal layer containing more than one metal alloys selected from nickel and chromium, and a laminated body of copper coating layer is formed on a surface of the substrate metal layer. After processing the exposed substrate metal layer after performing etching removal of the copper coating layer in an aqueous solution of a water-soluble organic solvent or the organic solvent having an amino group, the etching removal is carried out by using acidic oxidizing agents containing permanganates.

Description

積層體之蝕刻方法及使用其之印刷佈線基板之製造方法 Method for etching laminated body and method for manufacturing printed wiring substrate using same

本發明係關於積層體之蝕刻方法,進而,關於使用了該蝕刻方法而成為TAB帶、COF帶等電子零件之原料之印刷佈線基板之製造方法。 The present invention relates to a method of manufacturing a laminated body, and further relates to a method of manufacturing a printed wiring board which is a raw material of an electronic component such as a TAB tape or a COF tape by using the etching method.

更詳細地,是關於在印刷佈線基板之製造方法中使用半加成法之銅佈線的形成中,透過實施既定的蝕刻,可依廉價且簡單的步驟在銅層無側面蝕刻下除去佈線間的金屬殘留,且即便是微細佈線加工品也可形成具有足夠絕緣可靠性之圖案之印刷佈線基板之製造方法及透過該製造方法得到的印刷佈線基板。 More specifically, in the formation of a copper wiring using a semi-additive method in the method of manufacturing a printed wiring board, by performing a predetermined etching, it is possible to remove the wiring between the wiring layers without side etching in an inexpensive and simple procedure. A method of manufacturing a printed wiring board having a pattern having sufficient insulation reliability and a printed wiring board obtained by the manufacturing method can be formed even if it is a fine wiring processed product.

一般而言,為了製作可撓佈線板而使用的基板,大體上分為在絕緣體薄膜上使用黏合劑貼合了作為導體層之銅箔之3層可撓基板(例如,參照專利文獻1),以及在該絕緣體薄膜上不使用黏合劑地透過乾式鍍敷法或濕式鍍敷法在作為導體層的銅覆膜層上直接形成之2層可撓基板。 In general, a substrate to be used for the production of a flexible wiring board is generally divided into a three-layer flexible substrate in which a copper foil as a conductor layer is bonded to an insulating film using an adhesive (for example, see Patent Document 1). And a two-layer flexible substrate directly formed on the copper film layer as a conductor layer by a dry plating method or a wet plating method without using a binder on the insulator film.

隨著近年來電子設備的高密度化,進而追求佈線寬度亦窄間距化之佈線板,在這種情況下,於上述3層可撓基板的製造時,使用利用減成法之銅佈線形成。該製法是對作為基板的絕緣體薄膜上已形成之銅覆膜層按照所希望的佈線圖案透過氯化鐵溶液或含有鹽酸的氯化銅溶液進行蝕刻、進行佈線部的形成來製造佈線板的方 法,在透過該佈線部的蝕刻來製造的情況下,由於產生佈線部的側面被蝕刻亦即所謂側面蝕刻,佈線部的截面形狀容易變成底部擴展的梯形這一點成為問題。 In recent years, in order to increase the density of electronic devices, and to obtain a wiring board having a narrow wiring pitch, in this case, copper wiring by a subtractive method is used in the production of the above-described three-layer flexible substrate. In this method, a copper clad layer formed on an insulator film as a substrate is etched by a ferric chloride solution or a copper chloride solution containing hydrochloric acid in accordance with a desired wiring pattern, and a wiring portion is formed to fabricate a wiring board. In the case of manufacturing by the etching of the wiring portion, the side surface of the wiring portion is etched, that is, the side surface etching, and the cross-sectional shape of the wiring portion is likely to become a trapezoidal shape in which the bottom portion is expanded.

因此,為了滿足該要求,代替以往的貼合銅箔(3層可撓基板),銅厚度之薄的2層可撓基板正成為現在的主流。 Therefore, in order to satisfy this requirement, in place of the conventional laminated copper foil (three-layer flexible substrate), a two-layer flexible substrate having a small copper thickness is now in the mainstream.

為了製作2層可撓基板,作為在絕緣體薄膜上形成均一厚度的銅被覆層的方法,通常採用電鍍銅法。而且為了進行電鍍銅,一般在施予電鍍銅覆膜的絕緣體薄膜上形成薄膜金屬層而向表面全面賦予導電性,在其上進行電鍍銅處理(例如,參照專利文獻2)。另外,為了在絕緣體薄膜上得到薄膜金屬層,一般使用真空蒸鍍法、離子鍍法等乾式鍍敷法。 In order to produce a two-layer flexible substrate, as a method of forming a copper coating layer having a uniform thickness on an insulator film, a copper plating method is generally employed. Further, in order to perform copper plating, a thin film metal layer is generally formed on an insulating film to which an electroplated copper film is applied, and electrical conductivity is provided to the entire surface, and copper plating treatment is performed thereon (for example, see Patent Document 2). Further, in order to obtain a thin film metal layer on the insulating film, a dry plating method such as a vacuum deposition method or an ion plating method is generally used.

在這樣做的過程中,絕緣體薄膜和銅被覆層的密合性由於在其介面形成CuO或Cu2O等的脆弱層而非常的弱,為了維持印刷佈線板要求的與銅層的密合強度,在絕緣體薄膜和銅被覆層之間設置了Ni-Cr合金等基底金屬層(參照專利文獻3)。 In the process of doing so, the adhesion between the insulator film and the copper coating layer is extremely weak due to the formation of a fragile layer such as CuO or Cu 2 O on the interface thereof, and in order to maintain the adhesion strength to the copper layer required for the printed wiring board, An underlying metal layer such as a Ni-Cr alloy is provided between the insulator film and the copper coating layer (see Patent Document 3).

在最近的可撓基板中,為了對應伴隨著佈線圖案之更加高密度化之佈線的窄間距化,高密度佈線基板的製造中使用利用半加成法之銅佈線形成。在半加成法中,在絕緣體膜上已成膜之銅被覆層上透過光蝕刻法形成圖案抗蝕劑,進一步施行電鍍銅,最後剝離抗蝕劑,蝕刻除去不要的銅被覆層,形成銅佈線(以下,將這種蝕刻稱為閃蝕(Flash etching))。 In the recent flexible substrate, in order to reduce the narrow pitch of the wiring with higher density of the wiring pattern, a copper wiring using a semi-additive method is used for the production of the high-density wiring substrate. In the semi-additive method, a pattern resist is formed by photolithography on a copper coating layer formed on an insulator film, and copper plating is further performed, and finally the resist is removed, and an unnecessary copper coating layer is removed by etching to form copper. Wiring (hereinafter, such etching is referred to as flash etching).

於此種閃蝕中,使用例如硫酸/過氧化氫水溶液等作為蝕刻液。在半加成法中為了亦維持密合強度,作為絕緣體薄膜和銅被覆層之間的基底金屬層,廣泛使用了設置了Ni-Cr合金層的2 層鍍敷基板。這種情況下,由於Ni-Cr合金層難以溶解在硫酸/過氧化氫水溶液中,閃蝕步驟後僅銅被覆層被蝕刻除去,基底金屬層幾乎全部於溶解後殘留。雖然有與基底金屬層的除去步驟及蝕刻液相關的現有技術(參照專利文獻4、5),但由於皆為基底金屬層為鎳的技術,難以除去具有高耐蝕性的Ni-Cr合金層。 In such flashing, for example, an aqueous solution of sulfuric acid/hydrogen peroxide or the like is used as an etching liquid. In order to maintain the adhesion strength in the semi-additive method, as the underlying metal layer between the insulator film and the copper coating layer, the Ni-Cr alloy layer is widely used. Layer plating substrate. In this case, since the Ni-Cr alloy layer is hardly dissolved in the sulfuric acid/hydrogen peroxide aqueous solution, only the copper coating layer is removed by etching after the flash etching step, and the underlying metal layer remains almost completely after dissolution. Although there is a prior art relating to the removal step of the underlying metal layer and the etching liquid (see Patent Documents 4 and 5), since the base metal layer is made of nickel, it is difficult to remove the Ni-Cr alloy layer having high corrosion resistance.

作為除去該Ni-Cr合金層的方法,例如專利文獻6中,有著透過併用含有鹽酸和硫酸的市售鎳/鉻選擇蝕刻液和過錳酸鉀溶液等鹼性蝕刻液這2種進行處理,溶解Ni-Cr合金之蝕刻殘留的記載。 As a method of removing the Ni-Cr alloy layer, for example, Patent Document 6 has two types of alkaline etching liquids such as a commercially available nickel/chromium selective etching solution containing hydrochloric acid and sulfuric acid and a potassium permanganate solution. Description of the etching residue of the dissolved Ni-Cr alloy.

另外,用含有鹽酸和硫酸的市售酸性蝕刻液進行了處理的情況下,完全除去Cr是困難的,必須與適於Cr的除去的過錳酸鉀溶液等鹼性蝕刻液併用。用這種過錳酸溶液等鹼性蝕刻液進行處理對Cr的除去是有效的,但為了使用該蝕刻液,鹼性專用的處理設備是必要的,輕易地增加步驟這是困難的。另外,由於是強鹼溶液,因此已溶解之Cr成為有毒的六價鉻的形態的可能性很大,因此廢液的處理需要耗費充分的注意和成本。 Further, in the case of treatment with a commercially available acidic etching solution containing hydrochloric acid and sulfuric acid, it is difficult to completely remove Cr, and it is necessary to use it in combination with an alkaline etching solution such as a potassium permanganate solution suitable for removal of Cr. The treatment with an alkaline etching solution such as a permanganic acid solution is effective for removing Cr, but in order to use the etching liquid, an alkaline-dedicated processing apparatus is necessary, and it is difficult to easily increase the steps. Further, since it is a strong alkali solution, there is a high possibility that the dissolved Cr becomes a form of toxic hexavalent chromium, and therefore treatment of the waste liquid requires sufficient attention and cost.

另外由於酸性蝕刻液含有約10~20重量%的鹽酸,在這樣的狀態下會將銅溶解,因此必須含有一定量之抑制劑來抑制銅溶解,因此日常性的銅之溶解濃度和抑制劑濃度的管理是必要的。 Further, since the acidic etching solution contains about 10 to 20% by weight of hydrochloric acid, copper is dissolved in such a state, and therefore it is necessary to contain a certain amount of an inhibitor to suppress copper dissolution, so the daily copper dissolution concentration and inhibitor concentration Management is necessary.

目前為止,作為減成法中之Ni-Cr選擇蝕刻液,發明人等提案有使用酸性過錳酸溶液而能依廉價且簡單的步驟,並且對銅佈線側面蝕刻少的方法除去Ni-Cr合金之蝕刻殘留之方法(參照專利文獻7)。但是,此專利文獻7中揭示之技術是在減成法中透過銅的蝕刻除去Ni-Cr合金之蝕刻殘留的技術,要將在閃蝕等中未被 蝕刻而殘留的Ni-Cr合金亦除去是困難的。 As a Ni-Cr selective etching solution in the subtractive method, the inventors have proposed a method in which an acidic permanganic acid solution can be used in an inexpensive and simple manner, and the side surface of the copper wiring is less etched to remove the Ni-Cr alloy. A method of etching residue (refer to Patent Document 7). However, the technique disclosed in Patent Document 7 is a technique for removing the etching residue of the Ni-Cr alloy by etching of copper in the subtractive method, and is not to be in flash erosion or the like. It is difficult to remove the Ni-Cr alloy remaining by etching.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開平6-132628號公報 [Patent Document 1] Japanese Patent Laid-Open No. Hei 6-132628

[專利文獻2]日本專利特開平8-139448號公報 [Patent Document 2] Japanese Patent Laid-Open No. Hei 8-139448

[專利文獻3]日本專利特開平6-120630號公報 [Patent Document 3] Japanese Patent Laid-Open No. Hei 6-120630

[專利文獻4]日本專利特開2003-258411號公報 [Patent Document 4] Japanese Patent Laid-Open Publication No. 2003-258411

[專利文獻5]日本專利特開2006-294797號公報 [Patent Document 5] Japanese Patent Laid-Open Publication No. 2006-294797

[專利文獻6]日本專利特開2007-201216號公報 [Patent Document 6] Japanese Patent Laid-Open Publication No. 2007-201216

[專利文獻7]日本專利特開2010-13688號公報 [Patent Document 7] Japanese Patent Laid-Open Publication No. 2010-13688

但是,與除去作為減成法之基底金屬層之溶解殘留的Ni-Cr合金不同,在半加成法的情況下,必須除去閃蝕之後幾乎未被蝕刻的基底金屬層。即使是使用了可有效對這種Ni-Cr合金選擇性除去之酸性過錳酸溶液的情況下,對於閃蝕後之基底金屬層之除去必須耗費相對應的時間,由於蝕刻時間長,因而存在銅佈線之側面蝕刻的風險。另外,容易產生佈線間的基底金屬成分的溶解殘留,可靠性高的基板之製造係困難。 However, unlike the Ni-Cr alloy which removes the residual residue of the underlying metal layer as the subtractive method, in the case of the semi-additive method, it is necessary to remove the underlying metal layer which is hardly etched after the flash etching. Even in the case of using an acidic permanganic acid solution which is effective for selective removal of such a Ni-Cr alloy, the removal of the underlying metal layer after flashing must take a corresponding period of time, due to the long etching time. The risk of side etching of copper wiring. Further, it is easy to cause dissolution of the underlying metal component between wirings, and it is difficult to manufacture a substrate having high reliability.

鑒於這樣的情況,本發明提供一種解決在2層可撓佈線板的製造中使用半加成法的上述問題點,在包含基底金屬層和銅的構成體的蝕刻中,不溶解銅而選擇性地溶解基底金屬層、抑制銅佈線的佈線寬度的減少、沒有斷線、短路等缺陷之可靠性高的基板 製造方法。 In view of such circumstances, the present invention provides a solution to the above problem of using a semi-additive method in the manufacture of a two-layer flexible wiring board in which etching is not selectively dissolved in the etching of the constituent body including the underlying metal layer and copper. A highly reliable substrate that dissolves the underlying metal layer, suppresses reduction in wiring width of the copper wiring, and has no defects such as disconnection or short circuit Production method.

為了解決這樣的課題,本發明的發明人等作為用於在設置了基底金屬層的2層可撓基板用半加成法形成微細佈線之蝕刻方法進行了研究,其結果,發現為了除去基底金屬層,進行藉由包含具有一邊抑制銅的溶解一邊使基底金屬層成分溶解之效果之過錳酸鹽的酸性氧化劑進行處理的步驟,和在利用該氧化劑的處理之前,用包含親水性之溶劑的前處理液進行前處理,由該等具有迅速並且無溶解殘留地除去微細佈線之間的基底金屬層成分的效果,進而完成了本發明。 In order to solve such a problem, the inventors of the present invention have studied an etching method for forming a fine wiring by a semi-additive method for a two-layer flexible substrate provided with a base metal layer, and as a result, it has been found that in order to remove the base metal The layer is subjected to a step of treating an acidic oxidizing agent containing permanganate having an effect of dissolving the underlying metal layer component while suppressing dissolution of copper, and a solvent containing a hydrophilic solvent before the treatment with the oxidizing agent. The pretreatment liquid is pretreated, and the effect of removing the underlying metal layer component between the fine wirings quickly and without dissolution remains, and the present invention has been completed.

即,本發明之第1發明係積層體之蝕刻方法,其特徵在於,其係在絕緣基板的至少單面不透過黏合劑地以包含從鎳、鉻中選擇的1種以上金屬之合金所形成之基底金屬層、及在該基底金屬層的表面形成了銅覆膜層的積層體之蝕刻方法,對蝕刻除去銅覆膜層之後露出之基底金屬層,藉由具有胺基的水溶性有機溶劑或前述有機溶劑的水溶液進行處理之後,利用含過錳酸鹽之酸性之氧化劑進行蝕刻、除去。 In the first aspect of the invention, the method for etching a laminated body is characterized in that the insulating substrate is formed of an alloy containing one or more metals selected from the group consisting of nickel and chromium, at least one surface of the insulating substrate is not transmitted through the adhesive. a method for etching a base metal layer and a laminate having a copper coating layer formed on a surface of the base metal layer, and a base metal layer exposed after etching and removing the copper coating layer, by a water-soluble organic solvent having an amine group After the aqueous solution of the organic solvent is treated, it is etched and removed by using an acidic oxidizing agent containing permanganate.

本發明之第2發明係一種積層體之蝕刻方法,其特徵在於,於第1發明之利用酸性氧化劑的處理步驟之後,進一步施加了藉由錳殘渣除去液除去錳化合物的步驟。 According to a second aspect of the present invention, in the etching method of the laminated body, the step of removing the manganese compound by the manganese residue removing liquid is further applied after the step of treating the acidic oxidizing agent according to the first aspect of the invention.

本發明之第3發明係一種積層體之蝕刻方法,其特徵在於,第1及第2發明之氧化劑是含有0.01~10重量%過錳酸鹽和0.005~2重量%鹽酸的溶液。 According to a third aspect of the invention, the oxidizing agent according to the first or second aspect of the invention is the solution containing 0.01 to 10% by weight of permanganate and 0.005 to 2% by weight of hydrochloric acid.

本發明之第4發明係一種積層體之蝕刻方法,其特徵 在於,第1至第3發明的有機溶劑為烷醇胺。 A fourth invention of the present invention is a method of etching a laminate, which is characterized The organic solvent of the first to third inventions is an alkanolamine.

本發明之第5發明係印刷佈線基板之製造方法,其特徵在於,在絕緣基板的至少單面不透過黏合劑地以包含從鎳、鉻中選擇的1種以上金屬的合金所形成之基底金屬層、及在該基底金屬層的表面形成了銅覆膜層的積層體的表面,透過半加成法形成圖案的印刷佈線基板之製造方法中,對蝕刻除去了該銅覆膜層後露出之基底金屬層的除去,藉由具有胺基的水溶性有機溶劑或該有機溶劑的水溶液進行了處理之後,利用含過錳酸鹽的酸性的氧化劑進行蝕刻、除去。 According to a fifth aspect of the invention, there is provided a method of producing a printed wiring board, wherein the base metal formed of an alloy containing one or more metals selected from the group consisting of nickel and chromium is not transmitted through at least one surface of the insulating substrate. The layer and the surface of the layered body in which the copper film layer is formed on the surface of the underlying metal layer, and the method of manufacturing the printed wiring board formed by the semi-additive method, the copper film layer is removed by etching The removal of the underlying metal layer is carried out by a water-soluble organic solvent having an amine group or an aqueous solution of the organic solvent, followed by etching and removal using an acidic oxidizing agent containing permanganate.

本發明之第6發明係一種印刷佈線基板之製造方法,其特徵在於,第5發明之利用酸性的氧化劑之處理步驟之後,進一步施加了藉由錳殘渣除去液除去錳化合物的步驟。 According to a sixth aspect of the invention, in the method of producing a printed wiring board, after the step of treating the acidic oxidizing agent according to the fifth aspect of the invention, the step of removing the manganese compound by the manganese residue removing liquid is further applied.

本發明之第7發明係一種印刷佈線基板之製造方法,其特徵在於,第5及第6發明之酸性氧化劑係含有0.01~10重量%過錳酸鹽和0.005~2重量%鹽酸的溶液。 According to a seventh aspect of the invention, in the method of producing a printed wiring board, the acidic oxidizing agent according to the fifth or sixth aspect of the invention contains a solution of 0.01 to 10% by weight of permanganate and 0.005 to 2% by weight of hydrochloric acid.

本發明之第8發明係一種印刷佈線基板之製造方法,其特徵在於,第5至第7發明的有機溶劑為烷醇胺。 According to a ninth aspect of the invention, the organic solvent of the fifth to seventh inventions is an alkanolamine.

本發明之第9發明係一種印刷佈線基板之製造方法,其特徵在於,第5發明之絕緣基板是從聚醯亞胺系膜、聚醯胺系膜、聚酯系膜、聚四氟乙烯系膜、聚苯硫醚系膜、聚萘二甲酸乙二醇酯系膜、液晶聚合物系膜中選出之至少1種以上的樹脂膜。 According to a ninth aspect of the present invention, in a method of manufacturing a printed wiring board, the insulating substrate according to the fifth aspect of the invention is a polyimide film, a polyamide film, a polyester film, or a polytetrafluoroethylene system. At least one or more resin films selected from the group consisting of a film, a polyphenylene sulfide film, a polyethylene naphthalate film, and a liquid crystal polymer film.

根據本發明之印刷佈線基板之製造方法,透過採用利用本發明之蝕刻方法,在2層可撓基板的半加成法中,可以用廉價 且簡單的步驟於無銅層的側面蝕刻地除去佈線間的金屬殘留,另外,可以得到具有高絕緣可靠性的微細佈線,因此工業上的效果極大。 According to the method of manufacturing a printed wiring board of the present invention, it is possible to use an inexpensive etching method using the etching method of the present invention in a semi-additive method of a two-layer flexible substrate. In a simple procedure, the metal residue between the wirings is removed by etching on the side of the copper-free layer, and fine wiring having high insulation reliability can be obtained, so that the industrial effect is extremely large.

1‧‧‧絕緣體薄膜 1‧‧‧Insulator film

2‧‧‧基底金屬層 2‧‧‧Base metal layer

3‧‧‧銅覆膜層 3‧‧‧copper coating

4‧‧‧抗蝕劑圖案 4‧‧‧resist pattern

5‧‧‧佈線圖案 5‧‧‧ wiring pattern

6‧‧‧抗蝕劑圖案除去區域 6‧‧‧Resist pattern removal area

圖1為表示出可撓佈線基板的製造步驟之一系列的剖面圖,(a)係2層可撓基板、(b)係抗蝕劑圖案形成步驟、(c)係佈線圖案形成步驟、(d)係抗蝕劑除去步驟、(e)係閃蝕步驟、(f)係基底金屬層除去步驟。 1 is a cross-sectional view showing a series of manufacturing steps of a flexible wiring board, wherein (a) is a two-layer flexible substrate, (b) a resist pattern forming step, and (c) a wiring pattern forming step; d) a resist removal step, (e) a flashing step, and (f) a base metal layer removing step.

本發明係積層體之蝕刻方法,其特徵在於,其在絕緣基板的至少單面不透過黏合劑地用包含從鎳、鉻中選擇的1種以上金屬的合金形成了的基底金屬層、和在該基底金屬層的表面形成之銅覆膜層之積層體之蝕刻方法,對於蝕刻除去了銅覆膜層之後露出之基底金屬層的除去,用具有胺基的水溶性有機溶劑或前述有機溶劑的水溶液進行了處理之後,透過含過錳酸鹽之酸性氧化劑蝕刻除去。 The present invention is an etching method for a laminate, characterized in that the underlying metal layer formed of an alloy containing one or more metals selected from nickel and chromium is formed on at least one side of the insulating substrate without transmitting a binder, and An etching method of a laminate of a copper coating layer formed on a surface of the underlying metal layer, for removing a base metal layer exposed after etching the copper coating layer, using a water-soluble organic solvent having an amine group or the organic solvent After the aqueous solution has been treated, it is removed by etching through an acidic oxidant containing permanganate.

以下述為例對本發明的積層體之蝕刻方法進行說明:即,絕緣基板例如使用聚醯亞胺系絕緣體薄膜,在形成了基底金屬層和銅覆膜層之2層可撓基板的銅覆膜層之表面透過光刻形成圖案抗蝕劑,進一步實施電鍍銅,最後進行抗蝕劑的剝離,在利用閃蝕除去不要的銅覆膜層之後,進行對已形成的佈線間不需要之基底金屬層用含過錳酸鹽的酸性蝕刻液進行處理的步驟,和利用氧化劑的處理之前、用從具有胺基的有機溶劑或該有機溶劑的水溶液中選擇的前處理液進行前處理。 The etching method of the laminated body of the present invention will be described by taking the following as an example: the insulating substrate is, for example, a copper film layer of a flexible substrate in which a base metal layer and a copper film layer are formed, using a polyimide film. The surface is etched to form a pattern resist by photolithography, further electroplating copper is performed, and finally, the resist is peeled off, and after removing the unnecessary copper film layer by flash etching, an underlying metal layer which is not required between the formed wirings is performed. The step of treating with an acidic etching solution containing permanganate, and pretreatment with a pretreatment liquid selected from an organic solvent having an amine group or an aqueous solution of the organic solvent before the treatment with an oxidizing agent.

作為2層可撓基板,透過設置基底金屬層而進行了確保絕緣體薄膜和銅覆膜層之足耐實用的密合強度。 As the two-layer flexible substrate, the base metal layer is provided to ensure the practical adhesion strength between the insulator film and the copper film layer.

但是,認為透過蝕刻已形成之圖案之後,在引線和引線之間的間隙部分,即使透過蝕刻或之後的洗淨步驟,與絕緣體薄膜直接結合的極微量之基底金屬層之金屬成分也會殘留在絕緣體薄膜的表層部。 However, it is considered that after etching the formed pattern, the metal component of the extremely small amount of the underlying metal layer directly bonded to the insulator film remains in the gap portion between the lead and the lead even after the etching or the subsequent cleaning step. The surface layer portion of the insulator film.

本發明人等在進行了評價絕緣可靠性的恒溫恒濕偏差試驗(HHBT:High Temperature High Humidity Bias Test)之情況下,推斷該殘留在表層的金屬成分是引起遷移的原因之一。 When the inventors of the present invention performed the HHBT (High Temperature High Humidity Bias Test), it was estimated that the metal component remaining in the surface layer is one of the causes of migration.

(1)2層可撓基板 (1) 2 layers of flexible substrate a. 絕緣體薄膜 a. Insulator film

在本發明中,於絕緣基板使用了絕緣體薄膜的情況下可以形成2層可撓基板。 In the present invention, when an insulating film is used for the insulating substrate, a two-layer flexible substrate can be formed.

所使用之絕緣體薄膜,從耐熱性的觀點出發,較佳為從聚醯亞胺系膜、聚醯胺系膜、聚酯系膜、聚四氟乙烯系膜、聚苯硫醚系膜、聚萘二甲酸乙二醇酯系膜、液晶聚合物系膜中選出之至少1種以上的熱固化性樹脂膜。其中,聚醯亞胺系的膜及聚醯胺系的膜基於在回流焊等中適合需要高溫連接的用途方面,是特別較佳的膜。 The insulating film to be used is preferably a polyimide film, a polyamide film, a polyester film, a polytetrafluoroethylene film, a polyphenylene sulfide film, or a polymer, from the viewpoint of heat resistance. At least one or more thermosetting resin films selected from the group consisting of a naphthalate film and a liquid crystal polymer film. Among them, a polyimide film and a polyamide film are particularly preferable films for use in applications requiring high-temperature bonding in reflow soldering or the like.

另外,上述絕緣體薄膜膜厚度為8~75μm的膜可以適宜地使用。為了熱膨脹率的降低等,也可以向樹脂膜中適當地添加玻璃纖維、CNT等無機質材料。 Further, a film having a thickness of the insulator film of 8 to 75 μm can be suitably used. In order to reduce the coefficient of thermal expansion or the like, an inorganic material such as glass fiber or CNT may be appropriately added to the resin film.

b. 基底金屬層 b. base metal layer

作為在絕緣基板(絕緣體薄膜)上形成之基底金屬層的材質,係含有從鎳、鉻中所選擇之1種以上之金屬的合金。基底金屬層也可以採用進一步添加了從Mo、Ta、Ti、V、Co、W中選出之至少1種之金屬的合金。 The material of the underlying metal layer formed on the insulating substrate (insulating film) is an alloy containing one or more selected from the group consisting of nickel and chromium. As the base metal layer, an alloy in which at least one metal selected from Mo, Ta, Ti, V, Co, and W is further added may be used.

另外,基底金屬層較佳含有鉻7質量%以上25質量%以下,更佳含有鉻15質量%以上25質量%以下。基底金屬層的合金在具有高耐蝕性的同時,密合性高、具有耐熱性因而較佳。 Further, the base metal layer preferably contains 7% by mass or more and 25% by mass or less of chromium, and more preferably contains 15% by mass or more and 25% by mass or less of chromium. The alloy of the underlying metal layer is preferred because it has high corrosion resistance, high adhesion, and heat resistance.

進一步地,上述基底金屬層上也可以層疊該基底金屬層之金屬的氧化物。基底金屬層的組成可以考慮2層可撓基板及印刷佈線基板之HHBT試驗中的絕緣可靠性或對絕緣基板之密合性而進行適當選擇。 Further, an oxide of a metal of the underlying metal layer may be laminated on the underlying metal layer. The composition of the underlying metal layer can be appropriately selected in consideration of the insulation reliability in the HHBT test of the two-layer flexible substrate and the printed wiring board or the adhesion to the insulating substrate.

本發明的印刷佈線基板的基底金屬層的膜厚較佳為3~50nm。 The thickness of the underlying metal layer of the printed wiring board of the present invention is preferably from 3 to 50 nm.

當基底金屬層較3nm薄時,發生由於進行佈線加工時的蝕刻液滲入、佈線部浮起等佈線剝離強度顯著下降等問題,因而不佳。另外,該膜厚比50nm厚時,進行蝕刻變得困難,因而不佳。 When the underlying metal layer is thinner than 3 nm, problems such as infiltration of an etching solution during wiring processing and a decrease in wiring peeling strength such as floating of a wiring portion occur, which is not preferable. Further, when the film thickness is thicker than 50 nm, etching becomes difficult, which is not preferable.

c. 銅覆膜層 c. Copper coating

使用將銅靶裝入到濺射用陰極的濺射裝置,使銅覆膜層成膜。此時,較佳係基底金屬層和銅覆膜層在同一真空室內連續地形成。形成基底金屬層後,將膜取出至大氣中,於使用其他的濺射裝置形成銅覆膜層的情況下,有必要在成膜之前充分地進行脫水。 The copper coating layer was formed into a film by using a sputtering apparatus in which a copper target was placed in a cathode for sputtering. At this time, it is preferred that the base metal layer and the copper coating layer are continuously formed in the same vacuum chamber. After the underlying metal layer is formed, the film is taken out to the atmosphere, and when a copper coating layer is formed using another sputtering apparatus, it is necessary to sufficiently perform dehydration before film formation.

尚且,該銅覆膜層的層厚通常更佳為在10nm~500nm的範圍內。於該銅覆膜層之厚度係10nm以上的話,基板面上因針孔產生 的缺陷係可修復。於較10nm薄的情況下,形成圖案抗蝕劑,進一步實施電鍍銅處理時由於供電變得困難而不佳。另一方面,如果考慮利用閃蝕之除去步驟的效率,銅覆膜層的厚度可為500nm以下。 Further, the layer thickness of the copper coating layer is usually more preferably in the range of 10 nm to 500 nm. When the thickness of the copper coating layer is 10 nm or more, the surface of the substrate is generated by pinholes. The defects are repairable. When the film resist is thinner than 10 nm, the pattern resist is formed, and it is not preferable because the power supply becomes difficult when the copper plating process is further performed. On the other hand, if the efficiency of the removal step by flash erosion is considered, the thickness of the copper coating layer may be 500 nm or less.

(2)佈線圖案的形成 (2) Formation of wiring patterns

接下來一邊參照圖1一邊對佈線圖案的形成進行說明。 Next, the formation of the wiring pattern will be described with reference to Fig. 1 .

圖1係表示本發明的可撓佈線基板的製造步驟的一系列的剖面圖,(a)係2層可撓基板、(b)係抗蝕劑圖案形成步驟、(c)係佈線圖案形成步驟、(d)係抗蝕劑除去步驟、(e)係閃蝕步驟、(f)係基底金屬層除去步驟。 1 is a series of cross-sectional views showing a manufacturing step of a flexible wiring board of the present invention, wherein (a) is a two-layer flexible substrate, (b) a resist pattern forming step, and (c) a wiring pattern forming step. And (d) is a resist removal step, (e) is a flashing step, and (f) is a base metal layer removing step.

圖1中,1係絕緣體薄膜,2係基底金屬層,3係銅覆膜層,4係抗蝕劑圖案,5係佈線圖案,6係抗蝕劑圖案除去區域。 In Fig. 1, a 1-series insulator film, a 2-series base metal layer, a 3-series copper film layer, a 4-series resist pattern, a 5-series wiring pattern, and a 6-type resist pattern removal region are shown.

首先,透過光刻在銅覆膜層3上形成抗蝕劑圖案4(圖1(b))。形成抗蝕劑圖案4之後,在抗蝕劑圖案4內沒有形成抗蝕劑的區域(即,銅覆膜層3露出之區域)透過電解銅鍍覆法形成佈線圖案5(圖1(c))。 First, a resist pattern 4 is formed on the copper film layer 3 by photolithography (Fig. 1(b)). After the resist pattern 4 is formed, a region where the resist is not formed in the resist pattern 4 (that is, a region where the copper film layer 3 is exposed) is formed by the electrolytic copper plating method (FIG. 1(c) ).

該佈線圖案5由電解銅鍍覆層構成。 This wiring pattern 5 is composed of an electrolytic copper plating layer.

形成佈線圖案5之後,除去抗蝕劑圖案4。在除去了抗蝕劑圖案4的區域6,銅覆膜層3露出而顯現出來(圖1(d))。接下來,透過閃蝕除去在該區域6中露出了的銅覆膜層3。於使用閃蝕進行除去時之蝕刻液的組成,較佳為硫酸濃度係5~50g/L,過氧化氫濃度係10~60g/L。 After the wiring pattern 5 is formed, the resist pattern 4 is removed. In the region 6 where the resist pattern 4 is removed, the copper coating layer 3 is exposed and appears (Fig. 1 (d)). Next, the copper coating layer 3 exposed in the region 6 is removed by flashing. The composition of the etching liquid when removing by flash etching is preferably a sulfuric acid concentration of 5 to 50 g/L and a hydrogen peroxide concentration of 10 to 60 g/L.

透過閃蝕在銅覆膜層3被除去了的區域6露出基底金屬層2(圖1(e))。 The underlying metal layer 2 is exposed in the region 6 from which the copper clad layer 3 has been removed by flashing (Fig. 1(e)).

之後,將得到之2層可撓基板浸漬到(A)具有胺基之水溶性有機溶劑或前述有機溶劑之水溶液中,接著用(B)含過錳酸鹽的酸性的氧化劑液體進行處理以除去區域6中露出之基底金屬層2(圖1(f))。 Thereafter, the obtained two flexible substrates are impregnated into (A) an aqueous solution of an amine group-containing water-soluble organic solvent or the aforementioned organic solvent, followed by treatment with (B) a permanganate-containing acidic oxidizing agent liquid to remove The base metal layer 2 exposed in the region 6 (Fig. 1(f)).

此處,將2層可撓基板浸漬到(A)具有胺基的水溶性有機溶劑或該有機溶劑的水溶液中,是為了改善露出之基底金屬層對含過錳酸鹽之酸性的氧化劑液之潤濕性。 Here, the two layers of the flexible substrate are impregnated into (A) a water-soluble organic solvent having an amine group or an aqueous solution of the organic solvent in order to improve the exposed base metal layer to the permanganate-containing acidic oxidant liquid. Wettability.

對於該(A)處理而言,已知基底金屬層係含有從鎳、鉻中選擇之1種以上的合金,構成此基底金屬層的合金生成鈍態。即係如下的處理:在露出之基底金屬層表面,直至銅覆膜層的除去步驟中即使形成鈍態,透過浸漬到具有胺基的水溶性有機溶劑中,改善對含過錳酸鹽之酸性氧化劑液的潤濕性。 In the (A) treatment, it is known that the underlying metal layer contains one or more alloys selected from nickel and chromium, and the alloy constituting the underlying metal layer is passive. That is, the treatment is as follows: on the surface of the exposed base metal layer, even if a passivation state is formed in the removal step of the copper coating layer, the impregnation to the permanganate-containing acid is improved by impregnation into a water-soluble organic solvent having an amine group. Wettability of the oxidant solution.

(A)處理的具有胺基的水溶性有機溶劑較佳係烷醇胺。作為水溶性烷醇胺水溶液,可以列舉出單乙醇胺、二乙醇胺、三異丙醇胺等。進一步地,可以列舉出乙二胺或二亞乙基三胺的環氧乙烷或/和環氧丙烷加成物。 The (A) treated water-soluble organic solvent having an amine group is preferably an alkanolamine. Examples of the water-soluble alkanolamine aqueous solution include monoethanolamine, diethanolamine, and triisopropanolamine. Further, an ethylene oxide or/and a propylene oxide adduct of ethylenediamine or diethylenetriamine may be mentioned.

水溶性烷醇胺的濃度沒有特別限定,但是透過噴塗法噴附液體的情況下,從黏度的均衡角度出發較佳設為1~30wt%。如果黏度高,有進行充分水洗之必要。溶劑的溫度如果為室溫以上,則可以發揮除去性,但從縮短處理時間的意義上考慮較佳40℃~55℃附近。 The concentration of the water-soluble alkanolamine is not particularly limited. However, when the liquid is sprayed by a spray method, it is preferably from 1 to 30% by weight from the viewpoint of the balance of the viscosity. If the viscosity is high, it is necessary to wash it thoroughly. When the temperature of the solvent is at least room temperature, the removability can be exhibited. However, from the viewpoint of shortening the treatment time, it is preferably in the vicinity of 40 ° C to 55 ° C.

另外,浸漬到具有胺基的水溶性有機溶劑或該有機溶劑的水溶液中的時間較佳1秒以上,更佳10秒以上。但是,即使延長浸漬到具有胺基的水溶性有機溶劑或該有機溶劑的水溶液中 的時間,也不影響基底金屬層的除去。 Further, the time of immersion in a water-soluble organic solvent having an amine group or an aqueous solution of the organic solvent is preferably 1 second or longer, more preferably 10 seconds or longer. However, even if it is extended to be impregnated into a water-soluble organic solvent having an amine group or an aqueous solution of the organic solvent The time does not affect the removal of the base metal layer.

從生產性的觀點出發,浸漬到具有胺基的水溶性有機溶劑或該有機溶劑的水溶液中的時間即使較長也在1分鐘以內,更佳在30秒以內。 From the viewpoint of productivity, the time of immersion in a water-soluble organic solvent having an amine group or an aqueous solution of the organic solvent is even within 1 minute, more preferably within 30 seconds.

含過錳酸鹽的酸性的氧化劑較佳為含有0.01~10重量%過錳酸鹽和0.005~2重量%鹽酸的溶液。 The permanganate-containing acidic oxidizing agent is preferably a solution containing 0.01 to 10% by weight of permanganate and 0.005 to 2% by weight of hydrochloric acid.

過錳酸鹽濃度如果為低濃度,則蝕刻時間變緩慢,即使是高濃度效果也不改變,因此更佳係過錳酸鹽濃度為0.1~5重量%。另外,鹽酸濃度如果為高濃度,則變得容易溶解銅佈線,如果為低濃度則蝕刻速度緩慢、蝕刻時間增加,因此更佳係將鹽酸濃度設為0.01~0.5重量%。 If the permanganate concentration is a low concentration, the etching time becomes slow, and even if the high concentration effect does not change, it is more preferable that the permanganate concentration is 0.1 to 5% by weight. Further, when the concentration of hydrochloric acid is high, the copper wiring is easily dissolved, and if the concentration is low, the etching rate is slow and the etching time is increased. Therefore, the concentration of hydrochloric acid is preferably 0.01 to 0.5% by weight.

(B)處理之含過錳酸鹽之酸性氧化劑的處理方法,可以是噴塗法、浸漬法的任一個。酸性蝕刻液的處理溫度較佳係20℃~60℃,但如果溫度低,則鈍態層的除去容易變得不充分、蝕刻時間變長。另外,如果溫度高,則鹽酸煙霧的發生變多、銅的溶解量也增加,因此更佳為30℃~50℃。 (B) The treatment method of the permanganate-containing acidic oxidizing agent may be either a spraying method or a dipping method. The treatment temperature of the acidic etching solution is preferably from 20 ° C to 60 ° C. However, if the temperature is low, the removal of the passivation layer is likely to be insufficient, and the etching time is prolonged. Further, if the temperature is high, the occurrence of hydrochloric acid fumes increases, and the amount of dissolved copper increases, so that it is more preferably 30 ° C to 50 ° C.

含鹽酸的過錳酸鹽蝕刻液的處理時間較佳為20秒到3分鐘。 The treatment time of the permanganate etching solution containing hydrochloric acid is preferably from 20 seconds to 3 minutes.

若該時間短於20秒,對於除去基底金屬層的溶解殘留來說不充分;如果長於3分鐘,銅的溶解量增加。 If the time is shorter than 20 seconds, it is insufficient for removing the residual residue of the underlying metal layer; if it is longer than 3 minutes, the amount of copper dissolved increases.

進一步地,用上述含過錳酸鹽之酸性氧化劑處理之後,根據條件,存在著錳等附著在蝕刻面,形成氧化物等金屬化合物的情況,為了將其除去,較佳用具有還原性的草酸、抗壞血酸等有機酸水溶液、為了除去鹼性過錳酸鹽蝕刻液的錳殘渣而使用的市售錳殘渣除去液進行處理。 Further, after the treatment with the permanganate-containing acidic oxidizing agent, depending on the conditions, manganese or the like adheres to the etching surface to form a metal compound such as an oxide. In order to remove it, it is preferred to use a reducing oxalic acid. An organic acid aqueous solution such as ascorbic acid or a commercially available manganese residue removal liquid used to remove the manganese residue of the alkaline permanganate etching solution is treated.

用該錳殘渣除去液除去了錳化合物後,在佈線間起因於基底金屬層的殘渣未能完全除去的情況下,較佳為再次用含過錳酸鹽的酸性的氧化劑進行處理。 When the manganese compound is removed by the manganese residue removal liquid, and the residue due to the underlying metal layer is not completely removed between the wirings, it is preferred to treat it again with an acidic oxidizing agent containing permanganate.

如上述般,若使用本發明之印刷佈線基板之製造方法,可以在由側面蝕刻銅層所引起之引線變細不發生下,進行微細佈線加工。 As described above, according to the method for producing a printed wiring board of the present invention, it is possible to perform fine wiring processing without causing the lead thinning caused by the side etching of the copper layer.

至此,以由2層可撓基板用半加成法加工成印刷佈線基板之製造方法為例進行了說明。使用的絕緣基板,除了絕緣體薄膜外,可以使用陶瓷板、玻璃板、包含玻璃纖維等纖維和環氧樹脂的板或塑膠板等。 Thus far, a manufacturing method in which a two-layer flexible substrate is processed into a printed wiring board by a semi-additive method has been described as an example. As the insulating substrate to be used, in addition to the insulator film, a ceramic plate, a glass plate, a plate containing a fiber such as glass fiber, an epoxy resin, or a plastic plate can be used.

[實施例] [Examples]

以下,透過實施例和比較例對本發明進行更詳細地說明。 Hereinafter, the present invention will be described in more detail by way of examples and comparative examples.

[實施例1] [Example 1]

用半加成法製作了印刷佈線基板。表示其製作順序。 A printed wiring board was produced by a semi-additive method. Indicates the order in which they are made.

在聚醯亞胺膜(東麗‧杜邦公司製,膜厚50μm)上透過濺射法將20重量%Cr-Ni合金以厚度20~30nm的範圍形成基底金屬層。接著,在該基底金屬層上以200~350nm範圍形成銅覆膜層而製作2層可撓基板,在製作的2層可撓基板上透過光刻形成圖案抗蝕劑,進一步實施了電鍍銅後,剝離了抗蝕劑。 A 20 wt% Cr-Ni alloy was formed into a base metal layer in a thickness of 20 to 30 nm by a sputtering method on a polyimide film (manufactured by Toray DuPont Co., Ltd., film thickness: 50 μm). Next, a copper coating layer is formed on the underlying metal layer in a range of 200 to 350 nm to form a two-layer flexible substrate, and a pattern resist is formed by photolithography on the produced two-layer flexible substrate, and further copper plating is performed. The resist is peeled off.

之後,使用市售的硫酸/過氧化氫系的軟蝕刻液(菱江化學股份有限公司製,商品名:CPE800),進行閃蝕,製作銅佈線寬度/佈線間距為15μm/10μm的梳齒試驗基板。 Thereafter, a commercially available sulfuric acid/hydrogen peroxide-based soft etching liquid (manufactured by Lingjiang Chemical Co., Ltd., trade name: CPE800) was used for flash etching to prepare a comb-tooth test substrate having a copper wiring width/wiring pitch of 15 μm/10 μm. .

為了除去得到的試驗基板的佈線間露出了的基底金屬層,作為 其前處理,進行在加熱到50℃的5.0wt%單乙醇胺水溶液中浸漬10秒的(A)處理,水洗後,進行在含1.0wt%過錳酸鉀及0.3wt%鹽酸的水溶液中浸漬60秒的(B)處理。 In order to remove the underlying metal layer exposed between the wirings of the obtained test substrate, The pretreatment was carried out by immersing in a 5.0 wt% aqueous solution of monoethanolamine heated to 50 ° C for 10 seconds (A), and after washing with water, immersing in an aqueous solution containing 1.0 wt% of potassium permanganate and 0.3 wt% of hydrochloric acid. Second (B) processing.

將所得到之試驗基板以光學顯微鏡觀察,確認佈線間之基底金屬層之溶解。又,銅佈線之再度蝕刻之有無亦使用光學顯微鏡來確認。 The obtained test substrate was observed under an optical microscope to confirm the dissolution of the underlying metal layer between the wirings. Moreover, the presence or absence of re-etching of the copper wiring was also confirmed using an optical microscope.

進一步地,對於如此製造之試驗基板,依據JPCA-ET04(2007),在85℃且85%RH的環境下,在端子間施加DC60V,觀察1000小時的電阻。在電阻變為106Ω以下的時間點判斷為短路故障、如果經過1000小時後仍然為106Ω以上,則在判斷為合格的條件下進行HHBT。該佈線基板的目標HHBT耐久時間為1000小時。 Further, with respect to the test substrate thus manufactured, according to JPCA-ET04 (2007), DC 60 V was applied between the terminals in an environment of 85 ° C and 85% RH, and the electric resistance was observed for 1,000 hours. The resistance becomes a time point of 10 6 Ω or less short-circuit fault is determined, if after lapse of 1000 hours or more 10 6 Ω still, it is determined to be under acceptable conditions HHBT. The target HHBT endurance time of the wiring substrate was 1000 hours.

其試驗結果表示於表1。 The test results are shown in Table 1.

[實施例2] [Embodiment 2]

除了使單乙醇胺水溶液的濃度為25wt%以外,和實施例1同樣地進行了評價。其結果表示於表1。 The evaluation was carried out in the same manner as in Example 1 except that the concentration of the monoethanolamine aqueous solution was 25 wt%. The results are shown in Table 1.

[實施例3] [Example 3]

除了使單乙醇胺水溶液為三異丙醇胺水溶液以外,和實施例1同樣地進行了評價。其結果表示於表1。 The evaluation was carried out in the same manner as in Example 1 except that the aqueous monoethanolamine solution was an aqueous solution of triisopropanolamine. The results are shown in Table 1.

(比較例1) (Comparative Example 1)

實施例1中,除了設為在用含過錳酸鹽之酸性氧化劑的處理方法之前不實施水溶性烷醇胺處理以外,和實施例1同樣地,製作試驗基板,和實施例1同樣地進行了試驗基板的評價。 In the same manner as in Example 1, except that the water-soluble alkanolamine treatment was not carried out before the treatment with the permanganate-containing acidic oxidizing agent, the test substrate was produced in the same manner as in Example 1. The evaluation of the test substrate was carried out.

其結果表示於下述表1中。 The results are shown in Table 1 below.

(比較例2) (Comparative Example 2)

實施例1中,除了除去露出之基底金屬層的(A)(B)處理變為用市售的酸性蝕刻液CH-1920(MEC股份有限公司製,含鹽酸和硫酸的蝕刻液)的處理以外,和實施例1同樣地,製作試驗基板,進行了試驗基板的評價。 In the first embodiment, in addition to the treatment of removing the exposed underlying metal layer (A) (B), a commercially available acidic etching solution CH-1920 (an etching solution containing hydrochloric acid and sulfuric acid manufactured by MEC Co., Ltd.) was used. In the same manner as in Example 1, a test substrate was produced, and the test substrate was evaluated.

其結果表示於下述表1。 The results are shown in Table 1 below.

(比較例3) (Comparative Example 3)

除了除去閃蝕後露出之基底金屬層使用了過錳酸鉀1wt%、鹽酸5wt%、剩餘量為水的蝕刻液以外,和實施例1同樣地製作試驗基板並進行評價。 A test substrate was prepared and evaluated in the same manner as in Example 1 except that an etching liquid in which potassium permanganate was used in an amount of 1 wt% of potassium permanganate and 5 wt% of hydrochloric acid was removed.

其結果表示於下述表1。 The results are shown in Table 1 below.

(比較例4) (Comparative Example 4)

除了除去閃蝕後露出之基底金屬層使用了過錳酸鉀0.1wt%、鹽酸0.3wt%、剩餘量為水的蝕刻液以外,和實施例1同樣地製作試驗基板並進行了評價。 A test substrate was prepared and evaluated in the same manner as in Example 1 except that an etching liquid containing 0.1% by weight of potassium permanganate and 0.3% by weight of hydrochloric acid and the remaining amount of water was used as the underlying metal layer exposed after the flash etching.

其結果表示於下述表1。 The results are shown in Table 1 below.

(參考例1) (Reference example 1)

實施例1中,除了為除去露出之基底金屬層,以市售的酸性蝕刻液CH-1920(MEC股份有限公司製)進行處理,進一步地用含5 wt%過錳酸鉀和5wt%氫氧化鉀的鹼性過錳酸溶液進行了處理以外,與實施例1同樣地製作試驗基板並進行了評價。 In the first embodiment, in order to remove the exposed underlying metal layer, a commercially available acidic etching solution CH-1920 (manufactured by MEC Co., Ltd.) was used, and further, 5 was used. A test substrate was prepared and evaluated in the same manner as in Example 1 except that the alkaline permanganic acid solution of wt% potassium permanganate and 5 wt% potassium hydroxide was treated.

其結果表示於下述表1。 The results are shown in Table 1 below.

尚且,在表1的佈線間的觀察中,沒有基底金屬層之溶解殘留的例子表示為「O」,有溶解殘留的例子表示為「×」。 Further, in the observation between the wirings in Table 1, an example in which no dissolution of the underlying metal layer was present was indicated as "O", and an example in which dissolution remained was indicated as "X".

另外,針對HHBT的結果,1000小時以上沒有短路的例子表示為「O」,對於1000小時以內短路了的例子表示為「×」。 Further, as a result of HHBT, an example in which there is no short circuit for 1000 hours or more is indicated as “O”, and an example in which short circuit is performed within 1000 hours is indicated as “×”.

如由表1所表明般,僅使用了市售的酸性蝕刻液進行基底金屬的除去之比較例2中雖然可以除去佈線間的溶解殘留,但是HHBT中在1000小時以內短路了。於市售的酸性蝕刻液處理後,進一步地進行了鹼性過錳酸處理的比較例3之情況下,終於可在HHBT中達到目標時間。另外,比較例1的酸性過錳酸處理中,可以在佈線間看到基底金屬層的溶解殘留,基底金屬層的除去並不充 分,但是使用親水性的溶劑作為前處理而進行了酸性過錳酸處理的實施例1中,沒有佈線間的溶解殘留,HHBT也得到了良好的結果。 As shown in Table 1, in Comparative Example 2 in which the base metal was removed using only the commercially available acidic etching liquid, the dissolution residue between the wirings was removed, but the HHBT was short-circuited within 1000 hours. In the case of Comparative Example 3 in which the alkaline permanganic acid treatment was further carried out after the treatment of the commercially available acidic etching solution, the target time was finally reached in the HHBT. Further, in the acidic permanganic acid treatment of Comparative Example 1, the dissolution of the underlying metal layer was observed between the wirings, and the removal of the underlying metal layer was not performed. However, in Example 1 in which acidic permanganic acid treatment was carried out using a hydrophilic solvent as a pretreatment, there was no dissolution residue between wirings, and good results were also obtained for HHBT.

(產業上之可利用性) (industrial availability)

如上述般,根據本發明,利用半加成法形成銅佈線圖案時,特別是根據本發明的蝕刻液及蝕刻處理步驟,藉由廉價且簡單的步驟,快速地溶解以往之2層可撓基板利用半加成法的閃蝕處理後殘留之基底金屬層成分,並且由於可抑制銅的蝕刻,因此可於沒有側面蝕刻或損傷地情況下,容易地得到具有高絕緣電阻的微細佈線,這種效果極大。 As described above, according to the present invention, when a copper wiring pattern is formed by a semi-additive method, in particular, according to the etching liquid and the etching treatment step of the present invention, the conventional two-layer flexible substrate is quickly dissolved by an inexpensive and simple procedure. By using the base metal layer component remaining after the flash etching treatment by the semi-additive method, and since etching of copper can be suppressed, fine wiring having high insulation resistance can be easily obtained without side etching or damage. The effect is great.

另外,至此以將2層可撓基板用半加成法形成印刷佈線基板的步驟為例,對本發明進行了說明,透過絕緣基板的至少單面不透過黏合劑地形成了含有從鎳、鉻中選擇的1種以上金屬的合金形成之基底金屬層、和在上述基底金屬層之表面形成了銅覆膜層之積層體之蝕刻方法,蝕刻除去了前述銅覆膜層之後,可以容易地除去露出之基底金屬層,進而,可以用基底金屬層和銅覆膜層的積層體容易地形成回路等之圖案。 In addition, the present invention has been described above by taking a step of forming a printed wiring board by a semi-additive method for a two-layer flexible substrate. The at least one surface of the insulating substrate is formed to contain nickel and chromium from at least one side of the insulating substrate. An etching method of a base metal layer formed of an alloy of one or more selected metals and a laminate having a copper coating layer formed on a surface of the underlying metal layer, and the copper coating layer is removed by etching to be easily removed Further, the underlying metal layer can be easily formed into a pattern of a circuit or the like by using a laminate of the underlying metal layer and the copper film layer.

1‧‧‧絕緣體薄膜 1‧‧‧Insulator film

2‧‧‧基底金屬層 2‧‧‧Base metal layer

3‧‧‧銅覆膜層 3‧‧‧copper coating

4‧‧‧抗蝕劑圖案 4‧‧‧resist pattern

5‧‧‧佈線圖案 5‧‧‧ wiring pattern

6‧‧‧抗蝕劑圖案除去區域 6‧‧‧Resist pattern removal area

Claims (9)

一種積層體之蝕刻方法,其特徵在於:其係在絕緣基板的至少單面不透過黏合劑地形成了以包含從鎳、鉻中選擇之1種以上金屬之合金形成之基底金屬層、和在上述基底金屬層之表面形成了銅覆膜層之積層體之蝕刻方法,其中,對蝕刻除去了上述銅覆膜層後露出之基底金屬層,藉由具有胺基的水溶性有機溶劑或上述有機溶劑的水溶液進行了處理之後,利用含過錳酸鹽之酸性氧化劑進行蝕刻、除去。 An etching method for a laminated body, characterized in that an underlying metal layer formed of an alloy containing one or more metals selected from nickel and chromium is formed on at least one side of an insulating substrate without a binder; An etching method for forming a laminate of a copper coating layer on the surface of the underlying metal layer, wherein the underlying metal layer exposed after etching the copper coating layer is removed by a water-soluble organic solvent having an amine group or the organic After the aqueous solution of the solvent is treated, it is etched and removed by an acidic oxidizing agent containing permanganate. 如請求項1之積層體之蝕刻方法,其中,於上述利用酸性氧化劑之處理步驟之後,進而增加了藉由錳殘渣除去液除去錳化合物的步驟。 The etching method of the laminate according to claim 1, wherein the step of removing the manganese compound by the manganese residue removing liquid is further increased after the treatment step using the acidic oxidizing agent. 如請求項1或2之積層體之蝕刻方法,其中,上述氧化劑係含有0.01~10重量%過錳酸鹽和0.005~2重量%鹽酸的溶液。 The etching method of the laminate according to claim 1 or 2, wherein the oxidizing agent contains a solution of 0.01 to 10% by weight of permanganate and 0.005 to 2% by weight of hydrochloric acid. 如請求項1至3中任一項之積層體之蝕刻方法,其中,上述有機溶劑為烷醇胺。 The etching method of the laminate according to any one of claims 1 to 3, wherein the organic solvent is an alkanolamine. 一種印刷佈線基板之製造方法,其特徵在於:其係在絕緣基板的至少單面不透過黏合劑地形成了以包含從鎳、鉻中選擇之1種以上金屬之合金形成之基底金屬層、和在上述基底金屬層表面之銅覆膜層的積層體之表面,透過半加成法形成圖案的印刷佈線基板之製造方法,其中,對蝕刻除去了上述銅覆膜層後露出之基底金屬層,藉由具有胺基的水溶性有機溶劑或上述有機溶劑的水溶液進行處理之後,利用含過錳酸鹽的酸性的氧化劑進行蝕刻、除去。 A method of producing a printed wiring board, characterized in that an underlying metal layer formed of an alloy containing one or more metals selected from nickel and chromium is formed on at least one side of an insulating substrate without a binder; a method for producing a printed wiring board having a pattern formed by a semi-additive method on a surface of a laminate of a copper coating layer on a surface of the base metal layer, wherein the underlying metal layer is removed by etching the copper coating layer; After being treated with a water-soluble organic solvent having an amine group or an aqueous solution of the above organic solvent, it is etched and removed by an acidic oxidizing agent containing permanganate. 如請求項5之印刷佈線基板之製造方法,其中,於上述利用酸性氧化劑之處理步驟之後,進而增加了藉由錳殘渣除去液除去錳化合物的步驟。 The method for producing a printed wiring board according to claim 5, wherein after the treatment step using the acidic oxidizing agent, the step of removing the manganese compound by the manganese residue removing liquid is further increased. 如請求項5或6之印刷佈線基板之製造方法,其中,上述酸性氧化劑含有0.01~10重量%之過錳酸鹽和0.005~2重量%之鹽酸的溶液。 The method for producing a printed wiring board according to claim 5 or 6, wherein the acidic oxidizing agent contains a solution of 0.01 to 10% by weight of permanganate and 0.005 to 2% by weight of hydrochloric acid. 如請求項5至7中任一項之印刷佈線基板之製造方法,其中,上述有機溶劑為烷醇胺。 The method for producing a printed wiring board according to any one of claims 5 to 7, wherein the organic solvent is an alkanolamine. 如請求項5之印刷佈線基板之製造方法,其中,上述絕緣基板係從聚醯亞胺系膜、聚醯胺系膜、聚酯系膜、聚四氟乙烯系膜、聚苯硫醚系膜、聚萘二甲酸乙二醇酯系膜、液晶聚合物系膜中選出之至少1種以上的樹脂膜。 The method for producing a printed wiring board according to claim 5, wherein the insulating substrate is a polyimide film, a polyamide film, a polyester film, a polytetrafluoroethylene film, or a polyphenylene sulfide film. At least one or more resin films selected from the group consisting of polyethylene naphthalate film and liquid crystal polymer film.
TW105142053A 2016-02-26 2016-12-19 Laminated body etching method and printed wiring board manufacturing method using same TWI630855B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-036409 2016-02-26
JP2016036409A JP6646258B2 (en) 2016-02-26 2016-02-26 Laminated body etching method and printed wiring board manufacturing method using the same

Publications (2)

Publication Number Publication Date
TW201731356A true TW201731356A (en) 2017-09-01
TWI630855B TWI630855B (en) 2018-07-21

Family

ID=59721830

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105142053A TWI630855B (en) 2016-02-26 2016-12-19 Laminated body etching method and printed wiring board manufacturing method using same

Country Status (4)

Country Link
JP (1) JP6646258B2 (en)
KR (1) KR101917018B1 (en)
CN (1) CN107135608B (en)
TW (1) TWI630855B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108365096B (en) * 2018-02-02 2021-11-12 合肥工业大学 Preparation method and application of block copolymer semiconductor nanowire with spiral structure
CN111499915A (en) * 2019-12-30 2020-08-07 瑞声科技(新加坡)有限公司 Surface treatment method of L CP film

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4556449A (en) * 1984-10-15 1985-12-03 Psi Star Nickel etching process and solution
JP4063475B2 (en) * 1999-11-10 2008-03-19 メック株式会社 Copper or copper alloy etchant
JP4394477B2 (en) * 2003-03-27 2010-01-06 Dowaホールディングス株式会社 Method for producing metal / ceramic bonding substrate
JP2007165816A (en) * 2005-11-15 2007-06-28 Mitsui Mining & Smelting Co Ltd Printed wiring board, its manufacturing method, and its using method
CN101310571A (en) * 2005-11-15 2008-11-19 三井金属矿业株式会社 Printed wiring board, method for manufacturing same and use of same
WO2009008273A1 (en) * 2007-07-09 2009-01-15 Sumitomo Metal Mining Co., Ltd. Process for producing printed wiring board and printed wiring board produced by the production process
JP5573429B2 (en) * 2009-08-10 2014-08-20 住友ベークライト株式会社 Electroless nickel-palladium-gold plating method, plated product, printed wiring board, interposer, and semiconductor device
JP2011166028A (en) * 2010-02-12 2011-08-25 Sumitomo Metal Mining Co Ltd Method of manufacturing cof substrate
CN103589384B (en) * 2010-07-26 2016-03-02 日立化成株式会社 The manufacture method of adhesive composite, connection structural bodies, connection structural bodies and the application of adhesive composite
CN103002663B (en) * 2011-09-09 2015-07-15 深南电路有限公司 Printed circuit board processing method
CN102573315B (en) * 2012-01-31 2015-05-13 云南云天化股份有限公司 Process for forming circuit of epoxy resin circuit board

Also Published As

Publication number Publication date
KR20170101108A (en) 2017-09-05
CN107135608B (en) 2021-01-01
JP2017152659A (en) 2017-08-31
TWI630855B (en) 2018-07-21
KR101917018B1 (en) 2018-11-08
JP6646258B2 (en) 2020-02-14
CN107135608A (en) 2017-09-05

Similar Documents

Publication Publication Date Title
KR101522031B1 (en) Conductive layers, laminate using the same and method for producing the same
JP5724468B2 (en) Method for producing polyimide metal laminate
JP4986082B2 (en) Method for manufacturing printed wiring board
JP4986081B2 (en) Method for manufacturing printed wiring board
TWI630855B (en) Laminated body etching method and printed wiring board manufacturing method using same
JP2008028150A (en) Method of manufacturing printed wiring board, and printed wiring board obtained thereby
WO2011043881A1 (en) Nickel-chromium alloy stripper for flexible wiring boards
WO2010018790A1 (en) Multilayer laminated circuit board having multiple conduction part
JP5522617B2 (en) Adhesive layer forming liquid and adhesive layer forming method
JP7211571B2 (en) Etching solution for silver and method for manufacturing printed wiring board using the same
JP5317099B2 (en) Adhesive layer forming solution
JP4572363B2 (en) Adhesive layer forming liquid between copper and resin for wiring board and method for producing adhesive layer between copper and resin for wiring board using the liquid
JP5190780B2 (en) Etching solution, selective etching method, and method of manufacturing wiring board using the same
JP4877022B2 (en) Method for manufacturing printed wiring board
WO2020171051A1 (en) Etching liquid for silver, and method for producing printed wiring board using same
JP2018115373A (en) Method of etching laminate, and method of manufacturing printed wiring board using the same
JP5190779B2 (en) Etching solution, selective etching method, and method of manufacturing wiring board using the same
KR102161257B1 (en) Method of surface treatment for copper materials and their surface treatment liquids
JP2011176034A (en) Method of manufacturing flexible printed board and etching processing method