TW201727698A - Substrate separating method characterized by preventing circuits formed on a substrate from being irradiated by light and separating a substrate from a laminated body quickly - Google Patents

Substrate separating method characterized by preventing circuits formed on a substrate from being irradiated by light and separating a substrate from a laminated body quickly Download PDF

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TW201727698A
TW201727698A TW105124467A TW105124467A TW201727698A TW 201727698 A TW201727698 A TW 201727698A TW 105124467 A TW105124467 A TW 105124467A TW 105124467 A TW105124467 A TW 105124467A TW 201727698 A TW201727698 A TW 201727698A
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substrate
light
support
laminate
separation layer
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TW105124467A
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TWI720004B (en
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石田信悟
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東京應化工業股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
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  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The present invention is to prevent circuits formed on a substrate from being irradiated by light and to separate a substrate by a laminated body quickly. The whole periphery of a surrounding-circuit-formation area in a substrate 1 that is formed with opposite circuits and at least a part of a separation layer 4 that is obtained by stacking in a specific area occupying an area of 65%~100% width of a non-circuit-formation area in a radius direction are irradiated by laser light L, so as to separate the substrate by laminated body 10.

Description

支撐體分離方法 Support separation method

本發明係關於支撐體分離方法。 The present invention relates to a method of separating a support.

近年來,一直要求IC卡、攜帶式電話等之電子機器之薄型化、小型化、輕量化等。為了滿足此等之要求,關於安裝的半導體晶片亦必需使用薄型之半導體晶片。因此,成為半導體晶片之基的晶圓基板之厚度(膜厚)係在現狀係125~150μm,但於次世代之晶片用係必需作成25μm~50μm。因而,為了得到上述膜厚之晶圓基板係晶圓基板之薄板化步驟為必要不可欠缺。 In recent years, electronic devices such as IC cards and portable telephones have been required to be thinner, smaller, and lighter. In order to meet these requirements, it is also necessary to use a thin semiconductor wafer with respect to the mounted semiconductor wafer. Therefore, the thickness (film thickness) of the wafer substrate which is the basis of the semiconductor wafer is 125 to 150 μm in the current state, but it is necessary to form 25 μm to 50 μm for the next generation wafer system. Therefore, in order to obtain the thin film formation step of the wafer substrate wafer substrate having the above film thickness, it is necessary to be indispensable.

晶圓基板係因為薄板化而強度下降,所以為了防止薄板化的晶圓基板之破損,故在製造製程中係於晶圓基板黏合支撐板的狀態進行自動搬送,同時於晶圓基板上安裝電路等之構造物。然後,於製造製程後,將晶圓基板由支撐板分離。因此,至今使用有由晶圓基板剝離支撐體的各式各樣的方法。 Since the wafer substrate is thinned and the strength is lowered, in order to prevent damage of the thinned wafer substrate, in the manufacturing process, the wafer substrate is bonded to the support plate and automatically transferred, and the circuit is mounted on the wafer substrate. Structures. Then, after the manufacturing process, the wafer substrate is separated from the support plate. Therefore, various methods of peeling off the support from the wafer substrate have been used so far.

在專利文獻1係記載一種構件剝離方法,其 係含有於第1主面之外緣之至少一部分,配置光熱變換層的步驟、與將光熱變換層以配置於第1主面與第2主面之間之方式,將第1主面與前述第2主面,經由接著層而相互地接合的步驟、與於光熱變換層照射雷射光的步驟、與於第1之構件及第2之構件之中任一方之構件之外周部分,向第1之構件及第2之構件之中由另一方之構件分離的方向施加力量,將第1之構件由第2之構件至少部分上剝離的步驟。 Patent Document 1 describes a member peeling method, which The step of arranging the photothermal conversion layer on at least a part of the outer edge of the first main surface, and disposing the photothermal conversion layer between the first main surface and the second main surface, and the first main surface and the The second main surface is joined to each other via the adhesive layer, the step of irradiating the laser light to the photothermal conversion layer, and the outer peripheral portion of the member of the first member and the second member to the first portion A force is applied to the member and the second member from the direction in which the other member is separated, and the first member is at least partially peeled off from the second member.

〔先前技術文獻〕 [Previous Technical Literature] 〔專利文獻〕 [Patent Document]

[專利文獻1]日本特開2015-122370號公報(2015年7月2日公開) [Patent Document 1] Japanese Laid-Open Patent Publication No. 2015-122370 (published on July 2, 2015)

相較於記載在專利文獻1之構件剝離方法,更進一步如有可於分離層(光熱變換層)照射光的面積變小、同時可順利地由層積體分離支撐體的新的支撐體分離方法,則可避免於形成於基板的電路照射光、同時可由層積體迅速地分離支撐體所以為有用,故期待該支撐體分離方法。 In contrast to the member peeling method described in Patent Document 1, the area where the light is irradiated to the separation layer (photothermal conversion layer) is small, and the new support body can be smoothly separated from the laminate by the laminate. According to the method, it is possible to prevent the circuit formed on the substrate from being irradiated with light and to quickly separate the support from the laminate. Therefore, the support separation method is expected.

本發明係鑑於前述之問題點而為,該目的為提供一種新的支撐體分離方法,其係可防止對形成於基板 的電路照射光、同時可由層積體迅速地分離支撐體。 The present invention has been made in view of the foregoing problems, and an object thereof is to provide a novel support separation method which can prevent a pair from being formed on a substrate The circuit illuminates the light while the support can be quickly separated by the laminate.

為了解決上述之課題,關於本發明的支撐體分離方法係將基板、與透過光的支撐體,以經由接著層、與因吸收光而變質的分離層而層積而成的層積體,分離上述支撐體的支撐體分離方法,其特徵為其係上述基板係具有形成電路的電路形成區域、與包圍該電路形成區域之全周之未形成上述電路的非電路形成區域,且該方法係包含一種光照射步驟,隔著上述支撐體,對以對向於上述基板包圍上述電路形成區域之全周且占有在上述非電路形成區域之半徑方向的寬之65%以上、未達100%之區域的特定區域之方式所層積而得的分離層之至少一部分照射光、與一種分離步驟,其係於已照射上述光的層積體施加力,由該層積體分離上述支撐體。 In order to solve the above-described problems, the support separation method of the present invention separates a substrate and a support for transmitting light by a laminate formed by laminating a separation layer which is deteriorated by absorption of light. The support body separation method of the support body is characterized in that the substrate has a circuit formation region in which a circuit is formed, and a non-circuit formation region in which the circuit is not formed over the entire circumference of the circuit formation region, and the method includes A light irradiation step of arranging the entire circumference of the circuit formation region so as to face the substrate, and occupying 65% or more of the width in the radial direction of the non-circuit formation region, and not exceeding 100%, via the support body At least a part of the separation layer laminated in a specific region is irradiated with light, and a separation step is performed by applying a force to the laminate that has irradiated the light, and the support is separated by the laminate.

如藉由本發明則顯現出一種效果,即可提供一種新的支撐體分離方法,其係可防止對形成於基板的電路照射光、同時可由層積體迅速地分離支撐體。 By exhibiting an effect by the present invention, it is possible to provide a novel support separation method which can prevent the circuit formed on the substrate from being irradiated with light while the support can be quickly separated from the laminate.

1‧‧‧基板 1‧‧‧Substrate

2‧‧‧支撐板(支撐體) 2‧‧‧Support plate (support)

3‧‧‧接著層 3‧‧‧Next layer

4‧‧‧分離層 4‧‧‧Separation layer

4A‧‧‧區域(分離層) 4A‧‧‧Area (separation layer)

4B‧‧‧區域(分離層) 4B‧‧‧ Area (separation layer)

4C‧‧‧區域(分離層) 4C‧‧‧ area (separation layer)

4C-1‧‧‧分割區域(分離層) 4C-1‧‧‧divided area (separation layer)

4C-2‧‧‧分割區域(分離層) 4C-2‧‧‧divided area (separation layer)

5‧‧‧切割膠帶 5‧‧‧Cut Tape

6‧‧‧切割框 6‧‧‧cut box

10‧‧‧層積體 10‧‧‧Layer

50‧‧‧雷射照射裝置 50‧‧‧Laser illumination device

L‧‧‧光 L‧‧‧Light

W1‧‧‧寬 W1‧‧ wide

W2‧‧‧寬 W2‧‧ wide

[第1圖]說明有關本發明之一實施形態的支撐體分 離方法之概略的圖。 [Fig. 1] A support body according to an embodiment of the present invention is described A schematic diagram of the method.

[第2圖]說明在有關本發明之一實施形態的支撐體分離方法,照射在分離層的光的區域之概略的圖。 [Fig. 2] A schematic view of a region where light is incident on a separation layer in a method for separating a support according to an embodiment of the present invention.

[第3圖]說明有關本發明之一實施形態及變形例的支撐體分離方法所包含的光照射階段之概略的圖。 [Fig. 3] A schematic view showing a light irradiation stage included in a support separation method according to an embodiment and a modification of the present invention.

[第4圖]明有關本發明之一實施形態的支撐體分離方法的光之照射圖型之概略的圖。 [Fig. 4] A schematic view showing an illumination pattern of a support separation method according to an embodiment of the present invention.

<有關第1之實施形態的支撐體分離方法> <Support separation method according to the first embodiment>

使用第1~4圖,有關關於本發明之一實施形態(第1之實施形態)的支撐體分離方法,更詳細地說明。 A method of separating a support body according to an embodiment (first embodiment) of the present invention will be described in more detail with reference to Figs. 1 to 4 .

如第1圖之(a)所示,有關本實施形態的支撐體分離方法係將由矽所構成的基板1、與由矽所構成的支撐板(支撐體)2,經由接著層3、與藉由吸收雷射光L而變質的分離層4而層積而成的層積體10,分離支撐板2。尚,層積體10係在俯視的形狀為圓形。另外,層積體10係於基板1側黏上切割膠帶5,切割膠帶5係具備切割框6。 As shown in Fig. 1(a), the support separation method according to the present embodiment is a substrate 1 made of ruthenium and a support plate (support) 2 made of ruthenium, via the subsequent layer 3, and borrowed. The laminate 10 is formed by laminating the separation layer 4 which is deteriorated by the absorption of the laser light L, and the support plate 2 is separated. Further, the laminated body 10 has a circular shape in plan view. Further, in the laminate 10, the dicing tape 5 is adhered to the substrate 1 side, and the dicing tape 5 is provided with a dicing frame 6.

如第1圖之(b)所示,有關本實施形態的支撐體分離方法係包含光照射步驟,光照射步驟係藉由交互重複光照射階段與旋動階段,對在分離層4的區域4C之全域照射雷射光L(第2圖之(a))。尚,在有關本實 施形態的支撐體分離方法係所謂旋動階段與光照射階段係如不同時進行即可,可先進行任一者。 As shown in FIG. 1(b), the support separation method according to the present embodiment includes a light irradiation step in which the light irradiation step and the rotation phase are alternately repeated, and the region 4C in the separation layer 4 is applied. The entire area is irradiated with laser light L (Fig. 2(a)). Still, in relation to this reality In the support separation method of the embodiment, the so-called swirling phase and the light irradiation phase may be performed at different times, and any of them may be performed first.

另外,如第1圖之(c)及(d),有關本實施形態的支撐體分離方法係包含對已照射雷射光L的層積體10施加力量,由層積體10分離支撐板2的分離步驟。 Further, as shown in (c) and (d) of the first embodiment, the support separation method according to the present embodiment includes applying force to the laminated body 10 to which the laser light L has been irradiated, and separating the support plate 2 by the laminated body 10. Separation step.

〔光照射步驟〕 [Light irradiation step]

有關關於本實施形態的支撐體分離方法所包含的光照射步驟,更詳細地說明。如第1圖之(b)及第2圖之(a)所示,在光照射步驟係藉由交互地重複光照射階段與旋動階段,對以對向在基板1包圍電路形成區域之全周且於占有非電路形成區域之半徑方向的寬之65%以上,未達100%之區域的特定區域之方式層積的分離層4之區域4C,隔著支撐板2而照射光。 The light irradiation step included in the support separation method of the present embodiment will be described in more detail. As shown in FIG. 1(b) and FIG. 2(a), in the light irradiation step, by completely repeating the light irradiation phase and the rotation phase, the entire circuit formation region is surrounded by the substrate 1 in the opposite direction. The region 4C of the separation layer 4 laminated in a manner of not occupying a specific region of the region of the non-circuit formation region is irradiated with light via the support plate 2 at a level of 65% or more in the radial direction of the non-circuit formation region.

由此,可將對分離層4照射雷射光L的面積變小。因此可縮短為了進行光照射步驟而需要的時間。 Thereby, the area where the separation layer 4 is irradiated with the laser light L can be made small. Therefore, the time required for performing the light irradiation step can be shortened.

(電路形成區域) (circuit formation area)

所謂電路形成區域係意味著在基板1的內周部,例如,積體電路等之構造物所形成的區域。尚,在電路形成區域,積體電路等之構造物係可形成在露出於基板1的層積體10之外部的側之面,以及,相對於基板1之接著層3的側之面之雙方或任一方。在基板1的電路形成區域係在層積體10,以相對於位於比在分離層4的虛線A1更內 側的區域4A之方式配置(第2圖之(a))。 The circuit formation region means a region formed by a structure such as an integrated circuit on the inner peripheral portion of the substrate 1. Further, in the circuit formation region, the structure such as the integrated circuit can be formed on the side exposed to the outside of the laminate 10 of the substrate 1, and on both sides of the side of the subsequent layer 3 of the substrate 1. Or either party. The circuit formation region of the substrate 1 is in the laminate 10 so as to be located in comparison with the dotted line A1 located on the separation layer 4. The side area 4A is arranged (Fig. 2(a)).

(非電路形成區域) (non-circuit forming area)

所謂非電路形成區域係意味著在基板1包圍電路形成區域之全周,占有較該電路形成區域之外周端部更外側,較基板1之外周端部更內側的區域。在基板1的非電路形成區域係在層積體10,以相對於位於在分離層4的虛線A1與虛線A2的區域4B之方式配置(第2圖之(a))。在此,基板1之外周端部係配置於在分離層4的虛線A2之上。 The non-circuit forming region means that the substrate 1 surrounds the entire circumference of the circuit formation region, and occupies a region further outside the peripheral end portion of the circuit formation region than the outer peripheral end portion of the substrate 1. The non-circuit formation region of the substrate 1 is disposed on the laminate 10 so as to be disposed in a region 4B located between the broken line A1 and the broken line A2 of the separation layer 4 (Fig. 2(a)). Here, the outer peripheral end portion of the substrate 1 is disposed above the broken line A2 of the separation layer 4.

(特定區域) (specific area)

所謂特定區域係意味著包圍電路形成區域之全周,而且,占有在非電路形成區域之半徑方向的寬之65%以上、未達100%之區域的區域,由分割特定區域所構成的區域。另外,在有關本實施形態的支撐體分離方法係在基板1的特定區域之內周端部係與電路形成區域之外周端部分離,特定區域之外周端部係與基板1之外周端部分離。在層積體10,在基板1的特定區域係在分離層4,以相對於位於虛線B1與虛線B2的區域4C之方式配置(第2圖之(a))。 The specific region is a region that is formed by dividing a specific region by enclosing the entire circumference of the circuit formation region and occupying a region in which the width of the non-circuit formation region is 65% or more and less than 100%. Further, in the support separation method according to the present embodiment, the inner peripheral end portion of the specific region of the substrate 1 is separated from the outer peripheral end portion of the circuit formation region, and the peripheral end portion of the specific region is separated from the outer peripheral end portion of the substrate 1. . In the laminated body 10, the separation layer 4 is disposed in a specific region of the substrate 1, and is disposed in a region 4C between the broken line B1 and the broken line B2 (Fig. 2(a)).

(分割特定區域) (dividing a specific area)

所謂分割特定區域係意味著將層積體10之中心點設 為中心,將在基板1的特定區域以特定之角度等分割的區域。在基板1的分割特定區域係在層積體10,以對應於藉由在第2圖之(a)所示的分離層4的單點鏈線C1~C3而由區域4C分割的分割區域4C-1及4C-2所例示的分割區域之方式配置。尚,將基板1之特定區域等分割的角度係可將層積體10之中心點作為中心進行等分割的角度即可,例如20°、30°或45°為理想,20°為較理想。 The division of a specific region means that the center point of the laminate 10 is set. A region that is divided at a specific angle or the like in a specific region of the substrate 1 is centered. The divided specific region of the substrate 1 is in the laminated body 10 so as to correspond to the divided region 4C divided by the region 4C by the single-dot chain lines C1 to C3 of the separation layer 4 shown in (a) of Fig. 2 The configuration of the divided regions exemplified by -1 and 4C-2. In addition, the angle at which the specific region of the substrate 1 is divided may be an angle at which the center point of the laminate 10 is equally divided, and for example, 20°, 30°, or 45° is preferable, and 20° is preferable.

(光照射階段) (light irradiation stage)

在光照射階段係在層積體10,經由支撐板2而對分離層4之每分割區域照射光。例如對於將特定之角度作為20°進行了等分割的每分割區域照射雷射光L。由此,可將由雷射照射裝置50所照射的雷射光L之掃描範圍變窄,可降低使雷射光L掃描時所產生的照射圖型之形狀不正。因而,可防止照射於分離層4之分割區域4C-1的雷射光L為由該分割區域超出範圍而照射,可合適地防止設置於基板1的電路及切割膠帶5被光照射。 In the light irradiation stage, the laminated body 10 is irradiated with light to each divided region of the separation layer 4 via the support plate 2. For example, the laser light L is irradiated to each divided region in which the specific angle is equally divided by 20°. Thereby, the scanning range of the laser light L irradiated by the laser irradiation device 50 can be narrowed, and the shape of the irradiation pattern which is generated when the laser light L is scanned can be reduced. Therefore, it is possible to prevent the laser light L that has been irradiated onto the divided region 4C-1 of the separation layer 4 from being irradiated out of the range, and it is possible to suitably prevent the circuit provided on the substrate 1 and the dicing tape 5 from being irradiated with light.

另外,如第3圖之(a)所示,在光照射階段係對相對於占有在基板1之半徑方向具有寬W1的非電路形成區域之65%以上、未達100%之寬W2之區域的分割特定區域的分離層4,照射雷射光L。尚,寬W1亦為在第2圖之(a)所示的分離層4的區域4B之半徑方向的寬。另外,寬W2亦為在第2圖之(a)所示的分離層4的分割區域4C-1之半徑方向的寬。 Further, as shown in (a) of FIG. 3, in the light irradiation stage, the region of the width W2 which is 65% or more and less than 100% of the non-circuit formation region having the width W1 in the radial direction of the substrate 1 is used. The separation layer 4 of the specific region is divided to illuminate the laser light L. Further, the width W1 is also the width in the radial direction of the region 4B of the separation layer 4 shown in (a) of Fig. 2 . Further, the width W2 is also the width in the radial direction of the divided region 4C-1 of the separation layer 4 shown in (a) of Fig. 2 .

非電路形成區域之寬W1係因為依基板之尺寸而適宜地設定,所以並非被限定者,但如在本實施形態使用的直徑為300mm左右(12英吋)之基板,則大於1.0mm,3.0mm以下之寬之範圍內為理想,大於1.3mm,2.0mm以下之寬之範圍內為較理想。 The width W1 of the non-circuit forming region is not limited as long as it is appropriately set depending on the size of the substrate. However, the substrate having a diameter of about 300 mm (12 inches) used in the present embodiment is larger than 1.0 mm, 3.0. It is ideal in the range of widths below mm, and is preferably in the range of more than 1.3 mm and widths of 2.0 mm or less.

另外,分割特定區域之寬W2(換言之,在分離層4的分割區域4C-1之寬)係非電路形成區域之寬W1之65%以上,未達100%之範圍內之寬為理想,寬W1越小,對於寬W1而寬W2所占的比例變得越大之情事為理想。由此,以藉由之後進行分離步驟而可由層積體10合適地分離支撐板2之方式,可使分離層4之至少一部分變質。 Further, the width W2 of the division specific region (in other words, the width of the divided region 4C-1 of the separation layer 4) is 65% or more of the width W1 of the non-circuit formation region, and the width within the range of less than 100% is ideal and wide. The smaller the W1 is, the larger the ratio of the width W1 and the width W2 becomes. Thereby, at least a part of the separation layer 4 can be deteriorated by appropriately separating the support sheets 2 from the laminate 10 by performing the separation step thereafter.

在光照射階段係在經由支撐板2而向在區域4C-1的分離層4而照射雷射光L時,該雷射光L係使分離層4變質,同時透過該分離層4,照射於在基板1的分割特定區域。在此,在基板1,占有寬W2的分割特定區域係由基板1之電路形成區域分離。因此,相較於以分割特定區域之內側為相接於電路形成區域之方式設定的情況,可順利地防止雷射光L照射於形成在基板1的電路形成區域的電路。因此,可防止電路因雷射光L而受到損傷。另外,在基板1,占有寬W2的分割特定區域係由基板1之外周端部分離。因此,相較於以分割特定區域之外周端部為重疊於基板1之外周端部之方式設定的情況,可順利地防止雷射光L照射於較基板1之外周端部更外側。 因而,可更合適地防止因位於較基板1之外周端部更外側的切割膠帶5被雷射光L照射,而該切割膠帶5受到損傷之情事。 In the light irradiation stage, when the laser beam L is irradiated to the separation layer 4 in the region 4C-1 via the support plate 2, the laser beam L is used to deteriorate the separation layer 4 while being transmitted through the separation layer 4 to be irradiated on the substrate. 1 divides a specific area. Here, in the substrate 1, the division specific region occupying the width W2 is separated by the circuit formation region of the substrate 1. Therefore, it is possible to smoothly prevent the laser light L from being irradiated onto the circuit formed in the circuit formation region of the substrate 1 as compared with the case where the inner side of the division specific region is set to be in contact with the circuit formation region. Therefore, it is possible to prevent the circuit from being damaged by the laser light L. Further, in the substrate 1, the division specific region occupying the width W2 is separated from the outer peripheral end portion of the substrate 1. Therefore, it is possible to smoothly prevent the laser light L from being irradiated to the outside of the outer peripheral end portion of the substrate 1 as compared with the case where the peripheral end portion of the divided specific region is overlapped with the outer peripheral end portion of the substrate 1. Therefore, it is possible to more suitably prevent the dicing tape 5 located outside the peripheral end portion of the substrate 1 from being irradiated by the laser light L, and the dicing tape 5 is damaged.

尚,在本說明書中,所謂分離層為「變質」係意味著分離層受到稍微的外力而可被破壞的狀態,或作為與分離層相接的層之接著力為低下的狀態的現象。作為吸收光而產生的分離層之變質之結果,分離層係失去接受光之照射前之強度或接著性。總之,藉由吸收光,分離層4變脆。所謂分離層之變質係可以是構成分離層的物質為產生因吸收的光之能量所致的分解、空間排列之變化或官能基之解離等。分離層4之變質係作為吸收光之結果而產生。 In the present specification, the term "deterioration" of the separation layer means a state in which the separation layer can be broken by a slight external force or a state in which the adhesion force of the layer in contact with the separation layer is low. As a result of the deterioration of the separation layer generated by the absorption of light, the separation layer loses the strength or adhesion before the irradiation of the received light. In summary, the separation layer 4 becomes brittle by absorbing light. The metamorphic system of the separation layer may be a substance that constitutes the separation layer, such as decomposition due to energy of absorbed light, change in spatial arrangement, or dissociation of functional groups. The metamorphic layer of the separation layer 4 is produced as a result of absorbing light.

因而,例如只以抬高支撐板而會破壞之方式使其變質,可容易地分離支撐板與基板。更具體而言,例如藉由支撐體分離裝置等,將在層積體的基板及支撐板之一方固定於載置台,以藉由具備吸附手段的吸附墊(保持部)等而保持他方而抬高,分離支撐板與基板,或是將支撐板之周緣部分端部之倒角部位,藉由具備夾具(爪部)等的分離板而把持而施加力量,分離基板與支撐板即可。另外,例如藉由具備供給用以剝離接著劑之剝離液的剝離手段的支撐體分離裝置,亦可由在層積體的基板剝離支撐板。藉由該剝離手段而對在層積體的接著層之周端部之至少一部分供給剝離液,藉由使在層積體的接著層膨潤,可以該接著層已膨潤就於分離層以力量集中之方式,對基板 與支撐板施加力量。因此,可合適地分離基板與支撐板。 Therefore, for example, the support plate and the substrate can be easily separated by, for example, deforming only by raising the support plate and breaking it. More specifically, for example, one of the substrate and the support plate of the laminate is fixed to the mounting table by a support separation device or the like, and the other is held by the adsorption pad (holding portion) provided with the adsorption means. When the support plate and the substrate are separated, or the chamfered portion of the end portion of the peripheral portion of the support plate is gripped by a separation plate such as a jig (claw portion), the substrate and the support plate can be separated. Further, for example, by a support separating device including a peeling means for supplying a peeling liquid for peeling off the adhesive, the support plate may be peeled off from the substrate of the laminate. By applying the peeling liquid to at least a part of the peripheral end portion of the adhesive layer of the laminate by the peeling means, by swelling the adhesive layer of the laminate, the adhesive layer can be swollen and concentrated in the separation layer. Way, on the substrate Apply force to the support plate. Therefore, the substrate and the support plate can be appropriately separated.

尚,對於層積體而由外部施加力,亦即外力係依層積體之尺寸,以及,玻璃及矽等之支撐板(支撐體)之材質等而適宜調整即可,無限定者但例如直徑為300mm左右之層積體,則例如為0.1~5kgf左右之力。藉由施加0.1~5kgf左右之外力,可合適地分離基板與支撐板。 In addition, the external force is applied to the laminate, that is, the external force is appropriately adjusted depending on the size of the laminate, and the material of the support plate (support) such as glass or crucible, and the like. A laminate having a diameter of about 300 mm is, for example, a force of about 0.1 to 5 kgf. The substrate and the support plate can be appropriately separated by applying a force of about 0.1 to 5 kgf.

在有關本實施形態的支撐體分離方法係作為發射照射於分離層4的光的雷射光L使用CO2雷射(碳酸雷射)。由此,所以可產生透過由矽所構成的支撐板2的雷射光L。 In the support separation method according to the present embodiment, a CO 2 laser (carbonic acid laser) is used as the laser light L that emits light irradiated to the separation layer 4 . Thereby, it is possible to generate the laser light L that passes through the support plate 2 composed of the crucible.

在光照射階段的雷射光照射條件係雷射光之平均輸出值為1.0W以上、5.0W以下為理想,3.0W以上、4.0W以下為較理想。雷射光之重複頻率係20kHz以上、60kHz以下為理想,30kHz以上、50kHz以下為較理想。雷射光之掃描速度係100mm/s以上、10000mm/s以下為理想。由此,可對用以使分離層4變質之適切的條件設定雷射照射條件。 In the laser light irradiation condition, the average output value of the laser light is preferably 1.0 W or more and 5.0 W or less, and more preferably 3.0 W or more and 4.0 W or less. The repetition frequency of the laser light is preferably 20 kHz or more and 60 kHz or less, and preferably 30 kHz or more and 50 kHz or less. The scanning speed of the laser light is preferably 100 mm/s or more and 10000 mm/s or less. Thereby, the laser irradiation conditions can be set for the conditions suitable for deteriorating the separation layer 4.

在此,雷射光L之照射圖型係例如如第4圖之(a)~(f)所示,線形、螺旋形、多角點形、圓點形、多角環形或環形之任一為理想。在光照射階段係在分離層4的半徑方向之交界的虛線B1及B2之間,以占有將分割區域4C-1及4C-2設為開始的分割區域之面積之50%以上之面積之方式,形成光之照射圖型。由此,可使 在分割區域4C-1的分離層4合適地變質,可變脆。 Here, the illumination pattern of the laser light L is, for example, as shown in (a) to (f) of Fig. 4, and any one of a linear shape, a spiral shape, a polygonal dot shape, a dot shape, a polygonal ring shape, or a ring shape is preferable. In the light irradiation stage, between the broken lines B1 and B2 at the boundary of the separation layer 4 in the radial direction, an area occupying 50% or more of the area of the divided area in which the divided areas 4C-1 and 4C-2 are started is occupied. , forming a pattern of illumination of light. Thereby making The separation layer 4 in the divided region 4C-1 is suitably deteriorated and becomes brittle.

例如,如第4圖之(a)所示,在採用直線性的線形之圖型的情況,該線形之圖型之方向係不限定。另外,如可於分割區域之面積之50%以上形成圖型,則該線形之圖型之寬度及線之數係不限定。尚,在第4圖之(a)~(f)所示的各圖型之中,在可最縮短對於分割區域的雷射光L之照射時間之點上,直線的線形之圖型為最理想。 For example, as shown in (a) of FIG. 4, in the case of adopting a linear linear pattern, the direction of the linear pattern is not limited. Further, if the pattern can be formed by 50% or more of the area of the divided area, the width and the number of lines of the pattern of the line are not limited. Further, among the patterns shown in (a) to (f) of Fig. 4, the linear line pattern is optimal at the point of shortening the irradiation time of the laser light L for the divided region. .

另外,如第4圖之(b)所示,雷射光L之照射圖型亦可為螺旋形之圖型。描繪螺旋的線形之圖型係與線形之圖型相同,可連續地形成於分離層4之分割區域,在縮短雷射光L之照射時間之點上為較理想。尚,在照射於在分離層4的分割區域4C-1時,在螺旋形之圖型係產生雷射光L重複照射的處所。然而,在有關本實施形態的支撐體分離方法係透過了分離層4的雷射光L係因為照射於在基板1的分割特定區域,所以不照射於形成在基板1的電路及切割膠帶5。因此,在雷射光L重複照射的處所,即使不以雷射光L之照射輸出過度地調弱之方式調整,亦可防止形成於基板1的積體電路及切割膠帶5受到損傷。 Further, as shown in FIG. 4(b), the illumination pattern of the laser light L may be a spiral pattern. The pattern of the line shape in which the spiral is drawn is the same as the pattern of the line shape, and can be continuously formed in the divided region of the separation layer 4, which is preferable in that the irradiation time of the laser light L is shortened. Further, when irradiated to the divided region 4C-1 of the separation layer 4, a space in which the laser light L is repeatedly irradiated is generated in a spiral pattern. However, in the support separation method according to the present embodiment, the laser beam L that has passed through the separation layer 4 is irradiated on the division-specific region of the substrate 1, and therefore is not irradiated onto the circuit and the dicing tape 5 formed on the substrate 1. Therefore, in the place where the laser light L is repeatedly irradiated, the integrated circuit formed on the substrate 1 and the dicing tape 5 can be prevented from being damaged even if the irradiation output of the laser light L is not excessively adjusted.

另外,如第4圖之(c)所示,雷射光L之照射圖型係作為多角點形,例如亦可為四角點形。在此,四角點形之各點之尺寸係如可在分割區域4C-1之內周部,以占有分割區域之面積之50%以上之面積之方式形成圖型 則不限定。同樣地,如第4圖之(d)所示,雷射光L之照射圖型亦可為圓點形。此等多角點形及圓點形般的點狀之圖型係可次於線形而縮短照射於分割區域的時間,在分割區域可緻密地形成圖型之點上為理想。 Further, as shown in (c) of FIG. 4, the illumination pattern of the laser light L is a polygonal dot shape, and may be, for example, a square dot shape. Here, the size of each dot of the square dot shape is such that the inner peripheral portion of the divided region 4C-1 can form a pattern so as to occupy an area of 50% or more of the area of the divided region. It is not limited. Similarly, as shown in (d) of FIG. 4, the illumination pattern of the laser light L may also be a dot shape. Such a dot pattern having a polygonal dot shape and a dot shape is shorter than the linear shape to shorten the time of irradiation on the divided region, and is preferable in that the divided region can densely form a pattern.

另外,如第4圖之(e)所示,雷射光L之照射圖型亦可為多角環形。另外,如第4圖之(f)所示,雷射光L之照射圖型亦可為環形。藉由形成此等多角環形及環形之圖型,可使在分割區域4C-1的分離層4合適地變質。尚,在各環形之圖型,環狀圖型之寬度以及圖型之大小亦可適宜調整。 Further, as shown in (e) of FIG. 4, the illumination pattern of the laser light L may be a polygonal ring shape. Further, as shown in (f) of Fig. 4, the illumination pattern of the laser light L may be a ring shape. By forming these polygonal annular and annular patterns, the separation layer 4 in the divided region 4C-1 can be suitably deteriorated. However, in the pattern of each ring, the width of the ring pattern and the size of the pattern can also be appropriately adjusted.

(旋動階段) (rotation phase)

旋動階段係藉由光照射階段,將對分割區域照射雷射光L的層積體10,將該層積體10之中心點作為中心,使該層積體10之平面在特定之角度旋動。在有關本實施形態的支撐體分離方法係在分離層4的區域4C係以特定之角度20°等分割。因而,在旋動階段係藉由光照射階段,將對分離層4之分割區域4C-1照射雷射光L的層積體10,以特定之角度20°旋動。由此,雷射照射裝置50為配置於在層積體10的分離層4之分割區域4C-2之上。 In the swirling stage, the layered body 10 of the laser beam L is irradiated to the divided area by the light irradiation stage, and the center point of the layered body 10 is centered, and the plane of the layered body 10 is rotated at a specific angle. . In the support separation method according to the present embodiment, the region 4C of the separation layer 4 is divided by a specific angle of 20 or the like. Therefore, in the swirling stage, the laminated body 10 of the laser beam L is irradiated to the divided region 4C-1 of the separation layer 4 by a light irradiation step, and is rotated at a specific angle of 20°. Thereby, the laser irradiation device 50 is disposed above the divided region 4C-2 of the separation layer 4 of the laminate 10.

之後,藉由光照射階段,使在分割區域4C-2的分離層4變質。更進一步,交互地重複旋動階段及光照射階段,對在分離層4的區域4C之全域照射雷射光L。 Thereafter, the separation layer 4 in the divided region 4C-2 is deteriorated by the light irradiation step. Further, the rotation phase and the light irradiation phase are alternately repeated, and the laser light L is irradiated to the entire region 4C of the separation layer 4.

尚,在旋動階段係將具備切割框6的切割膠 帶5貼上基板1側的層積體10,例如固定於具備多孔部,可旋動的平台(不圖示)等之載置台,以特定之角度使其旋動即可。 Still, in the spinning stage, the cutting glue with the cutting frame 6 will be provided. The laminate 10 having the tape 5 attached to the substrate 1 side may be fixed to, for example, a mounting table having a porous portion and a rotatable platform (not shown), and may be rotated at a specific angle.

(分離步驟) (separation step)

在分離步驟係對已照射雷射光L的層積體10施加力量,由層積體10分離支撐板2(第1圖之(c))。更具體而言係例如以藉由可旋動的平台而固定層積體10之基板1側的狀態,藉由具備波紋管墊等之吸附墊的分離板(保持部,不圖示)而吸附保持支撐板2之上面部,同時抬高該分離板。由此,於層積體10施加力,由層積體10分離支撐板2。 In the separation step, a force is applied to the laminated body 10 to which the laser light L has been irradiated, and the support plate 2 is separated by the laminated body 10 ((c) of Fig. 1). More specifically, for example, a state in which the substrate 1 side of the laminate 10 is fixed by a rotatable platform is adsorbed by a separation plate (holding portion, not shown) including a suction pad such as a bellows pad. The upper surface of the support plate 2 is held while raising the separation plate. Thereby, a force is applied to the laminated body 10, and the support plate 2 is separated by the laminated body 10.

尚,在有關本實施形態的支撐體分離方法係在光照射步驟,藉由交互地進行光照射階段與旋動階段,使在區域4C之全域的分離層4變質。總之,在層積體10,分離層4之周緣部分全周為變質。因此,光照射步驟後,不特定層積體10之方向,可保持在層積體10的支撐板2之周緣部分,進行分離步驟。另外,在分離步驟係若施加力於層積體10,則在區域4C中力集中於已變質的分離層4。由此,首先,在區域4C的分離層4被破壞,接著,藉由力集中於區域C以外之分離層4,於區域C以外之分離層4被破壞。由此,可由層積體10合適地分離支撐板2。 Further, in the support separation method according to the present embodiment, in the light irradiation step, the separation layer 4 in the entire region 4C is deteriorated by alternately performing the light irradiation step and the swirling step. In short, in the laminate 10, the peripheral portion of the separation layer 4 is deteriorated throughout the entire circumference. Therefore, after the light irradiation step, the direction of the laminate 10 is not specified, and the peripheral portion of the support plate 2 of the laminate 10 can be held, and the separation step can be performed. Further, in the separation step, if a force is applied to the laminate 10, the force is concentrated in the region 4C to the deteriorated separation layer 4. Thus, first, the separation layer 4 in the region 4C is broken, and then the separation layer 4 other than the region C is destroyed by the force concentrated on the separation layer 4 other than the region C. Thereby, the support plate 2 can be appropriately separated by the laminated body 10.

尚,在分離步驟係例如經由浮動接頭或萬向 接頭等之接頭(不圖示),藉由抬高分離板,由層積體10分離支撐板2。如此的接頭係可旋動,而且,對於固定在平台的層積體10之平面以傾斜之方式可動。 Still, in the separation step, for example via a floating joint or universal A joint (not shown) of a joint or the like is separated from the support plate 2 by the laminate 10 by raising the separation plate. Such a joint is rotatable and is movable in an inclined manner with respect to the plane of the laminate 10 fixed to the platform.

如經由浮動接頭等而由分離板施加力於層積體10,則在力集中於層積體10之外周端部之一部分時,該浮動接頭為可動,朝向該外周端部之一部分而以朝向吸附墊為相接於支撐板2的面之方式,分離板為傾斜。伴隨於此,由層積體10分離的途中之支撐板2為傾斜。由此,可防止過度的力施加於支撐板2及基板1之一部分,而且,可使力集中於層積在支撐板2與接著層3之間的分離層4。因而,可防止支撐板2及基板1因過度的力而破損,同時可合適地由基板1剝離支撐板2。 When a force is applied to the laminated body 10 by the separating plate via a floating joint or the like, when the force concentrates on a portion of the outer peripheral end portion of the laminated body 10, the floating joint is movable toward a portion of the outer peripheral end portion to face The adsorption pad is in such a manner as to be in contact with the face of the support plate 2, and the separation plate is inclined. Along with this, the support plate 2 in the middle of separation by the laminated body 10 is inclined. Thereby, excessive force can be prevented from being applied to one of the support plate 2 and the substrate 1, and the force can be concentrated on the separation layer 4 which is laminated between the support plate 2 and the adhesive layer 3. Therefore, it is possible to prevent the support plate 2 and the substrate 1 from being damaged by excessive force, and the support plate 2 can be appropriately peeled off from the substrate 1.

〔其他之步驟〕 [other steps]

進行了分離步驟後,如第1圖之(d)所示,於分離了支撐板2的基板1係在黏上切割膠帶5的狀態,例如進行藉由含有有機溶劑的剝離液等而除去接著層3及分離層4之殘渣的洗淨步驟。另外,洗淨步驟後,進行由已黏上切割膠帶5的基板1製造半導體晶片的切割步驟。在此,已黏上基板1的切割膠帶5係已防止因照射雷射光L而受到損傷。因此,如藉由有關本實施形態的支撐體分離方法,則可在層積體10黏上切割膠帶5的狀態,順利地進行由基板1至製造半導體晶片之一連串之步驟。因而,在基板1形成電路的步驟已薄化的基板1係可避免在黏上切 割膠帶5時破損。 After the separation step, as shown in FIG. 1(d), the substrate 1 on which the support plate 2 is separated is attached to the dicing tape 5, and is removed by, for example, a stripping solution containing an organic solvent. A washing step of the residue of layer 3 and separation layer 4. Further, after the washing step, a cutting step of manufacturing a semiconductor wafer from the substrate 1 to which the dicing tape 5 has been attached is performed. Here, the dicing tape 5 to which the substrate 1 has been adhered is prevented from being damaged by the irradiation of the laser light L. Therefore, according to the support separation method of the present embodiment, the dicing tape 5 can be adhered to the laminate 10, and the step of connecting one of the substrates 1 to the semiconductor wafer can be smoothly performed. Therefore, the substrate 1 which has been thinned in the step of forming the circuit on the substrate 1 can avoid being cut on the paste. When the tape was cut 5, it was broken.

〔層積體10〕 [Layer 10]

關於被使用在有關本實施形態的支撐體分離方法的層積體10,更詳細地說明。層積體10係將基板1、與接著層3、與分離層4、與支撐板2以此順序層積而成。 The laminate 10 used in the support separation method of the present embodiment will be described in more detail. The laminate 10 is formed by laminating the substrate 1, the adhesion layer 3, the separation layer 4, and the support plate 2 in this order.

〔基板1〕 [Substrate 1]

在有關本實施形態的支撐體分離方法係作為基板1,使用由矽所構成的晶圓基板。基板1係以經由接著層3及分離層4而被支撐板2支撐的狀態,可供於薄化、安裝等之製程。另外,於基板1之電路形成區域係例如安裝積體電路或金屬凸塊等之構造物。 In the support separation method according to the present embodiment, a wafer substrate made of tantalum is used as the substrate 1. The substrate 1 is supported by the support plate 2 via the adhesive layer 3 and the separation layer 4, and is available for thinning, mounting, and the like. Further, in the circuit formation region of the substrate 1, for example, a structure such as an integrated circuit or a metal bump is attached.

尚,在有關本實施形態的支撐體分離方法係作為基板使用矽晶圓基板,但基板1係不限定於矽晶圓基板,亦可使用由陶瓷基板、薄的薄膜基板、可撓性基板等之任意之材質所構成的基板。 Further, in the support separation method according to the present embodiment, the ruthenium wafer substrate is used as the substrate, but the substrate 1 is not limited to the ruthenium wafer substrate, and a ceramic substrate, a thin film substrate, a flexible substrate, or the like may be used. A substrate made of any material.

〔支撐板2〕 [support plate 2]

支撐板(支撐體)2係支撐基板1的支撐體,經由接著層3,黏上基板1。因此,作為支撐板2係於基板1之薄化、搬送、安裝等之製程時,為了防止基板1之破損或變形而具有必要的強度即可。另外,如使為了讓分離層4變質之光透過者即可。 The support plate (support) 2 supports the support of the substrate 1, and the substrate 1 is adhered via the adhesive layer 3. Therefore, when the support plate 2 is subjected to a process of thinning, transporting, or mounting the substrate 1, it is necessary to have necessary strength in order to prevent breakage or deformation of the substrate 1. Further, it is sufficient to transmit light for deteriorating the separation layer 4.

於支撐體係可使用由玻璃、矽或丙烯酸系樹脂所構成的支撐板等,但在有關本實施形態的支撐體分離方法係使用由矽所構成的支撐板2。以將由矽所構成的支撐板2層積於基板1,可使基板1與支撐板2之熱膨脹係數之差變小,所以可降低因加熱所致的層積體10之彎曲。 A support plate made of glass, tantalum or acrylic resin may be used for the support system. However, in the support separation method according to the present embodiment, the support plate 2 made of tantalum is used. By laminating the support plate 2 composed of the crucible on the substrate 1, the difference in thermal expansion coefficient between the substrate 1 and the support plate 2 can be made small, so that the bending of the laminated body 10 due to heating can be reduced.

尚,於支撐板2係設置用以特定該支撐板2之方向的缺口部(缺口,不圖示)。 Further, a notch portion (notch, not shown) for specifying the direction of the support plate 2 is provided on the support plate 2.

〔接著層3〕 [Next layer 3]

接著層3係為了將基板1與已形成分離層4的支撐板2貼附而使用。另外,接著層3係藉由為了貼附基板1與支撐板2而使用的接著劑而形成的層。 Next, the layer 3 is used to attach the substrate 1 to the support plate 2 on which the separation layer 4 has been formed. Further, the adhesive layer 3 is a layer formed by an adhesive used to attach the substrate 1 and the support sheet 2.

接著層3之厚度係按照成為貼附之對象的基板1及支撐板2之種類、施加於貼附後之基板1的處理等而適宜地設定即可,但10~150μm之範圍內為理想,15~100μm之範圍內為較理想。 The thickness of the layer 3 may be appropriately set according to the type of the substrate 1 and the support plate 2 to be attached, the treatment applied to the substrate 1 after the attachment, and the like, but it is preferably in the range of 10 to 150 μm. It is ideal in the range of 15 to 100 μm.

接著層3係例如可藉由旋轉塗佈、浸漬法、輥式刮刀法、噴霧塗佈、狹縫塗佈等之方法而塗佈接著劑而形成。另外,接著層3係例如取代將接著劑直接塗於基板1,亦可將接著劑事先塗佈於兩面的薄膜(亦即,乾式薄膜),貼附於基板1而形成。 Next, the layer 3 can be formed, for example, by applying a binder by a method such as spin coating, dipping, roll doctoring, spray coating, or slit coating. Further, the adhesive layer 3 may be formed by, for example, applying an adhesive directly to the substrate 1 or by applying a film to both surfaces (that is, a dry film) in advance, and attaching it to the substrate 1.

作為形成接著層3的接著劑,例如可使用丙烯酸系、酚醛系、萘醌系、烴系、聚醯亞胺系、彈性體、 聚碸系等之在該領域一般周知之各式各樣之接著劑。 As the adhesive for forming the adhesive layer 3, for example, an acrylic type, a phenol type, a naphthoquinone type, a hydrocarbon type, a polyimide type, an elastomer, or the like can be used. Polyurethanes and the like which are generally known in the art.

作為接著劑含有的樹脂,亦即,接著層3含有的樹脂係具備接著性者即可,例如可較理想地使用烴樹脂、丙烯酸-苯乙烯系樹脂、馬來醯亞胺系樹脂、彈性體樹脂、聚碸系樹脂等,或是組合此等等。以下,關於在本實施之形態的接著層3含有的樹脂之組成進行說明。 The resin contained in the adhesive layer, that is, the resin contained in the adhesive layer 3 may have an adhesive property. For example, a hydrocarbon resin, an acrylic-styrene resin, a maleic imine resin, or an elastomer may be preferably used. Resin, polyfluorene-based resin, etc., or a combination thereof. Hereinafter, the composition of the resin contained in the adhesive layer 3 of the embodiment of the present embodiment will be described.

(烴樹脂) (hydrocarbon resin)

烴樹脂係具有烴骨架,將單體組成物聚合而成的樹脂。作為烴樹脂,可舉出環烯烴系聚合物(以下,有稱為「樹脂(A)」者,以及,萜烯樹脂、松香系樹脂及石油樹脂所構成的群中選擇至少1種之樹脂(以下,有稱為「樹脂(B)」者)等,但不限定於此。 The hydrocarbon resin is a resin having a hydrocarbon skeleton and polymerizing a monomer composition. Examples of the hydrocarbon resin include a cycloolefin polymer (hereinafter referred to as "resin (A)", and at least one selected from the group consisting of a terpene resin, a rosin resin, and a petroleum resin. Hereinafter, there is a case called "resin (B)", but the invention is not limited thereto.

樹脂(A)亦可為將含有環烯烴系單體的單體成分聚合而成的樹脂。具體而言,可舉出含有環烯烴系單體的單體成分之開環(共)聚合物、使含有環烯烴系單體的單體成分加成(共)聚合的樹脂等。 The resin (A) may be a resin obtained by polymerizing a monomer component containing a cycloolefin monomer. Specifically, a ring-opening (co)polymer containing a monomer component of a cycloolefin type monomer, and a resin obtained by addition (co)polymerization of a monomer component containing a cycloolefin type monomer are mentioned.

作為包含於構成樹脂(A)的單體成分的前述環烯烴系單體,例如可舉出降莰烯、降莰二烯等之二環物、二環戊二烯、羥基二環戊二烯等之三環物、四環十二烯等之四環物、環戊二烯三聚物等之五環物、四環戊二烯等之七環物、或此等多環物之烷基(甲基、乙基、丙基、丁基等)取代物、烯基(乙烯基等)取代物、亞烷基(亞乙基等)取代物、芳基(苯基、甲苯基、萘基等)取代物 等。在此等之中特別是由降莰烯、四環十二烯、或此等之烷基取代物所構成的群中所選擇的降莰烯系單體為理想。 Examples of the cycloolefin-based monomer to be contained in the monomer component constituting the resin (A) include a bicyclic compound such as norbornene and norbornadiene, dicyclopentadiene, and hydroxydicyclopentadiene. a tetracyclic compound, a tetracyclic substance such as tetracyclododecene, a pentacyclic substance such as a cyclopentadiene terpolymer, a heptacyclic substance such as tetracyclopentadiene, or an alkyl group of such a polycyclic substance (methyl, ethyl, propyl, butyl, etc.) substituted, alkenyl (vinyl or the like) substituted, alkylene (ethylene, etc.) substituted, aryl (phenyl, tolyl, naphthyl) Substitute Wait. Among these, a norbornene-based monomer selected from the group consisting of norbornene, tetracyclododecene, or an alkyl-substituted product thereof is preferable.

構成樹脂(A)的單體成分係亦可含有與上述的環烯烴系單體可共聚的其他之單體,例如含有烯單體為理想。作為烯單體係例如可舉出乙烯、丙烯、1-丁烯、異丁烯、1-己烯、α-烯烴等。烯單體係可為直鏈狀,亦可為支鏈狀。 The monomer component constituting the resin (A) may contain another monomer copolymerizable with the above cycloolefin-based monomer, and for example, an olefin monomer is preferable. Examples of the olefinic system include ethylene, propylene, 1-butene, isobutylene, 1-hexene, and α-olefin. The olefinic system may be linear or branched.

另外,作為構成樹脂(A)的單體成分,含有環烯烴單體之情事係由高耐熱性(低的熱分解、熱重量減少性)之觀點而為理想。對於構成樹脂(A)的單體成分全體的環烯烴單體之比例係5mole%以上為理想,10mole%以上為較理想,20mole%以上為更理想。另外,對於構成樹脂(A)的單體成分全體的環烯烴單體之比例係無特別限定,但由溶解性及在溶液之隨時間安定性之觀點係80mole%以下為理想,70mole%以下為較理想。 In addition, it is preferable that the monomer component constituting the resin (A) contains a cycloolefin monomer from the viewpoint of high heat resistance (low thermal decomposition and thermogravimetric reduction). The ratio of the cycloolefin monomer of the entire monomer component constituting the resin (A) is preferably 5 mole% or more, more preferably 10 mole% or more, more preferably 20 mole% or more. In addition, the ratio of the cycloolefin monomer of the entire monomer component constituting the resin (A) is not particularly limited, but is preferably 80 mole% or less from the viewpoint of solubility and stability with time in the solution, and 70 mole% or less is preferable. More ideal.

另外,作為構成樹脂(A)的單體成分,亦可含有直鏈狀或支鏈狀之烯單體。對於構成樹脂(A)的單體成分全體的烯單體之比例係由溶解性及柔軟性之觀點係10~90mole%為理想,20~85mole%為較理想,30~80mole%為更理想。 Further, the monomer component constituting the resin (A) may contain a linear or branched olefin monomer. The ratio of the olefin monomer constituting the entire monomer component of the resin (A) is preferably from 10 to 90 mole% from the viewpoint of solubility and flexibility, and more preferably from 20 to 85 mole%, more preferably from 30 to 80 mole%.

尚,樹脂(A)係例如以使環烯烴系單體與烯單體所構成的單體成分聚合而成的樹脂之方式,為未具有極性基的樹脂,在抑制在高溫下之氣體產生上為理想。 In addition, the resin (A) is, for example, a resin obtained by polymerizing a monomer component composed of a cycloolefin monomer and an olefin monomer, and is a resin having no polar group, and suppresses gas generation at a high temperature. Ideal.

關於聚合單體成分時之聚合方法或聚合條件 等係無特別限制,依照通用方法適宜地設定即可。 Polymerization method or polymerization condition when polymerizing monomer components The system is not particularly limited and may be appropriately set according to a general method.

例如,可將以下述化學式(1)所表示的重複單位及以下述化學式(2)所表示的重複單位之共聚物的環烯烴共聚物作為接著成分之樹脂(A)使用。 For example, a resin (A) having a repeating unit represented by the following chemical formula (1) and a cyclic olefin copolymer of a copolymer represented by the following chemical formula (2) as a binder component can be used.

(化學式(2)中,n為0或1~3之整數)。 (In the chemical formula (2), n is an integer of 0 or 1 to 3).

作為如此的環烯烴共聚物係可使用APL 8008T、APL 8009T、以及APL 6013T(全部為三井化學公司製)等。 As such a cyclic olefin copolymer, APL 8008T, APL 8009T, and APL 6013T (all manufactured by Mitsui Chemicals, Inc.) and the like can be used.

另外,作為可作樹脂(A)使用的市售品係例如可舉出POLYPLASTICS公司製之「TOPAS」、三井化學公司製之「APEL」、日本ZEON公司製之「ZEONOR」及「ZEONEX」、JSR公司製之「ARTON」等。 In addition, as a commercially available product which can be used as the resin (A), for example, "TOPAS" manufactured by POLYPLASTICS Co., Ltd., "APEL" manufactured by Mitsui Chemicals Co., Ltd., "ZEONOR" and "ZEONEX" manufactured by Japan ZEON Co., Ltd., and JSR The company's "ARTON" and so on.

樹脂(A)之玻璃轉移溫度(Tg)係60℃以上為理想,70℃以上為特別理想。若樹脂(A)之玻璃轉移溫度為60℃以上,則在層積體曝露於高溫環境時可更抑制接著層3之軟化。 The glass transition temperature (Tg) of the resin (A) is preferably 60 ° C or higher, and particularly preferably 70 ° C or higher. When the glass transition temperature of the resin (A) is 60 ° C or more, the softening of the adhesive layer 3 can be further suppressed when the laminate is exposed to a high temperature environment.

樹脂(B)係由萜烯系樹脂、松香系樹脂及石油樹脂所構成的群中選擇至少1種之樹脂。具體而言,作 為萜烯系樹脂係例如可舉出萜烯樹脂、萜烯酚樹脂、改質萜烯樹脂、氫化萜烯樹脂、氫化萜烯酚樹脂等。作為松香系樹脂係例如可舉出松香、松香酯、氫化松香、氫化松香酯、聚合松香、聚合松香酯、改質松香等。作為石油樹脂係例如可舉出脂肪族或芳香族石油樹脂、氫化石油樹脂、改質石油樹脂、脂環族石油樹脂、香豆酮‧茚石油樹脂等。在此等之中氫化萜烯樹脂、氫化石油樹脂為較理想。 The resin (B) is a resin selected from the group consisting of a terpene resin, a rosin resin, and a petroleum resin. Specifically, Examples of the terpene-based resin include a terpene resin, a terpene phenol resin, a modified terpene resin, a hydrogenated terpene resin, and a hydrogenated terpene phenol resin. Examples of the rosin-based resin include rosin, rosin ester, hydrogenated rosin, hydrogenated rosin ester, polymerized rosin, polymerized rosin ester, and modified rosin. Examples of the petroleum resin include aliphatic or aromatic petroleum resins, hydrogenated petroleum resins, modified petroleum resins, alicyclic petroleum resins, coumarone oxime petroleum resins, and the like. Among these, hydrogenated terpene resins and hydrogenated petroleum resins are preferred.

樹脂(B)之軟化點係無特別限定,但80~160℃為理想。若樹脂(B)之軟化點為80~160℃,則可抑制層積體曝露於高溫環境時軟化,不產生接著不良。 The softening point of the resin (B) is not particularly limited, but is preferably from 80 to 160 °C. When the softening point of the resin (B) is 80 to 160 ° C, it is possible to prevent the laminate from softening when exposed to a high temperature environment, and no defects are caused.

樹脂(B)之重量平均分子量係無特別限定,但300~3,000為理想。若樹脂(B)之重量平均分子量為300以上,則成為耐熱性為充分者,在高溫環境下排氣量變少。另一方面,若樹脂(B)之重量平均分子量為3,000以下,則成為向烴系溶劑之接著層之溶解速度為良好者。因此,可將分離了支撐板後之基板上之接著層之殘渣迅速地溶解、除去。尚,在本實施形態的樹脂(B)之重量平均分子量係意味著以凝膠滲透層析法(GPC)而測定的聚苯乙烯換算之分子量者。 The weight average molecular weight of the resin (B) is not particularly limited, but 300 to 3,000 is preferable. When the weight average molecular weight of the resin (B) is 300 or more, the heat resistance is sufficient, and the amount of exhaust gas is reduced in a high temperature environment. On the other hand, when the weight average molecular weight of the resin (B) is 3,000 or less, the dissolution rate to the adhesive layer of the hydrocarbon solvent is good. Therefore, the residue of the adhesive layer on the substrate on which the support plate has been separated can be quickly dissolved and removed. In addition, the weight average molecular weight of the resin (B) of this embodiment means the molecular weight of polystyrene converted by gel permeation chromatography (GPC).

尚,作為樹脂,亦可使用混合樹脂(A)與樹脂(B)者。藉由混合而成為耐熱性為良好者。例如作為樹脂(A)與樹脂(B)之混合比例係(A):(B)=80:20~55:45(質量比),因為高溫環境時之耐熱性、及柔軟性優異故為理想。 Further, as the resin, those in which the resin (A) and the resin (B) are mixed may be used. By mixing, heat resistance is good. For example, the mixing ratio of the resin (A) and the resin (B) is (A): (B) = 80:20 to 55:45 (mass ratio), which is excellent in heat resistance and flexibility in a high-temperature environment. .

(丙烯酸-苯乙烯系樹脂) (acrylic-styrene resin)

作為丙烯酸-苯乙烯系樹脂係例如可舉出將苯乙烯或苯乙烯之衍生物、與(甲基)丙烯酸酯等作為單體使用而聚合的樹脂。 The acrylic-styrene-based resin may, for example, be a resin obtained by polymerizing a derivative of styrene or styrene, a (meth) acrylate or the like as a monomer.

作為(甲基)丙烯酸酯係例如可舉出由鏈式構造所構成的(甲基)丙烯酸烷基酯、具有脂肪族環的(甲基)丙烯酸酯、具有芳香族環的(甲基)丙烯酸酯。由鏈式構造所構成的(甲基)丙烯酸烷基酯係可舉出具有碳數15~20之烷基的丙烯酸系長縺烷基酯、具有碳數1~14之烷基的丙烯酸系烷基酯等。作為丙烯酸系長縺烷基酯係可舉出烷基為n-十五烷基、n-十六烷基、n-十七烷基、n-十八烷基、n-十九烷基、n-二十烷基等的丙烯酸或甲基丙烯酸之烷基酯。尚,該烷基亦可為支鏈狀。 Examples of the (meth) acrylate include (meth)acrylic acid alkyl ester composed of a chain structure, (meth) acrylate having an aliphatic ring, and (meth)acrylic acid having an aromatic ring. ester. Examples of the alkyl (meth)acrylate composed of a chain structure include an acrylic long-terminated alkyl ester having an alkyl group having 15 to 20 carbon atoms, and an acrylic alkyl group having an alkyl group having 1 to 14 carbon atoms. Base ester and the like. Examples of the acrylic sulfonium alkyl esters include an alkyl group of n-pentadecyl group, n-hexadecyl group, n-heptadecyl group, n-octadecyl group, and n-nonadecyl group. An alkyl ester of acrylic acid or methacrylic acid such as n-eicosyl group. Still, the alkyl group may also be branched.

作為具有碳數1~14之烷基的丙烯酸系烷基酯係可舉出使用於即存之丙烯酸系接著劑的一般周知之丙烯酸系烷基酯。例如可舉出烷基為由甲基、乙基、丙基、丁基、2-乙基己基、異辛基、異壬基、異癸基、十二烷基、月桂基、十三烷基等所構成的丙烯酸或甲基丙烯酸之烷基酯。 The acrylic alkyl ester having an alkyl group having 1 to 14 carbon atoms is a generally known acrylic alkyl ester which is used in an existing acrylic adhesive. For example, the alkyl group may be methyl, ethyl, propyl, butyl, 2-ethylhexyl, isooctyl, isodecyl, isodecyl, dodecyl, lauryl or tridecyl. An alkyl ester of acrylic acid or methacrylic acid.

作為具有脂肪族環的(甲基)丙烯酸酯係可舉出環己基(甲基)丙烯酸酯、環戊基(甲基)丙烯酸酯、1-金剛烷基(甲基)丙烯酸酯、降莰基(甲基)丙烯酸酯、異莰基(甲基)丙烯酸酯、三環癸基(甲基)丙烯 酸酯、四環十二烷基(甲基)丙烯酸酯、二環戊基(甲基)丙烯酸酯,但異莰基甲基丙烯酸酯、二環戊基(甲基)丙烯酸酯為較理想。 Examples of the (meth) acrylate having an aliphatic ring include cyclohexyl (meth) acrylate, cyclopentyl (meth) acrylate, 1-adamantyl (meth) acrylate, and thiol group. (meth) acrylate, isodecyl (meth) acrylate, tricyclodecyl (meth) propylene The acid ester, tetracyclododecyl (meth) acrylate, dicyclopentyl (meth) acrylate, but isodecyl methacrylate, dicyclopentyl (meth) acrylate is preferred.

作為具有芳香族環的(甲基)丙烯酸酯係無特別限定,但作為芳香族環係例如可舉出苯基、苄基、甲苯基、茬基、聯苯基、萘基、蒽基、苯氧甲基、苯氧乙基等。另外,芳香族環係亦可具有碳數1~5之直鏈狀或支鏈狀之烷基。具體而言係苯氧乙基丙烯酸酯為理想。 The (meth) acrylate having an aromatic ring is not particularly limited, and examples of the aromatic ring system include a phenyl group, a benzyl group, a tolyl group, a fluorenyl group, a biphenyl group, a naphthyl group, a fluorenyl group, and a benzene group. Oxymethyl, phenoxyethyl and the like. Further, the aromatic ring system may have a linear or branched alkyl group having 1 to 5 carbon atoms. In particular, phenoxyethyl acrylate is desirable.

(馬來醯亞胺系樹脂) (Malay ylide resin)

作為馬來醯亞胺系樹脂係例如作為單體,可舉出N-甲基馬來醯亞胺、N-乙基馬來醯亞胺、N-n-丙基馬來醯亞胺、N-異丙基馬來醯亞胺、N-n-丁基馬來醯亞胺、N-異丁基馬來醯亞胺、N-sec-丁基馬來醯亞胺、N-第三丁基馬來醯亞胺、N-n-戊基馬來醯亞胺、N-n-己基馬來醯亞胺、N-n-庚基馬來醯亞胺、N-n-辛基馬來醯亞胺、N-月桂基馬來醯亞胺、N-硬脂醯基馬來醯亞胺等之具有烷基的馬來醯亞胺,N-環丙基馬來醯亞胺、N-環丁基馬來醯亞胺、N-環戊基馬來醯亞胺、N-環己基馬來醯亞胺、N-環庚基馬來醯亞胺、N-環辛基馬來醯亞胺等之具有脂肪族烴基的馬來醯亞胺,N-苯基馬來醯亞胺、N-m-甲基苯基馬來醯亞胺、N-o-甲基苯基馬來醯亞胺、N-p-甲基苯基馬來醯亞胺等之具有芳基的芳香族馬來醯亞胺等聚合而得的樹脂。 Examples of the maleic imine resin-based resin include N-methyl maleimide, N-ethyl maleimide, Nn-propyl maleimide, and N-iso. Propyl maleimide, Nn-butyl maleimide, N-isobutyl maleimide, N-sec-butyl maleimide, N-tert-butyl maleate Imine, Nn-pentylmaleimide, Nn-hexylmaleimide, Nn-heptylmaleimide, Nn-octylmaleimide, N-lauryl malayan Anthracene, N-cyclohexylmaleimide, N-cyclopropylmaleimide, N-cyclobutylmaleimide, N-ring Maleic acid having an aliphatic hydrocarbon group such as pentyl maleimide, N-cyclohexylmaleimide, N-cycloheptylmaleimide, N-cyclooctylmaleimide or the like Amine, N-phenylmaleimide, Nm-methylphenylmaleimide, No-methylphenylmaleimide, Np-methylphenylmaleimide, etc. A resin obtained by polymerization of an aromatic aryl maleimide or the like.

(彈性體) (elastomer)

彈性體係作為主鏈之構成單位含有苯乙烯單位為理想,該「苯乙烯單位」亦可具有取代基。作為取代基係例如可舉出碳數1~5之烷基、碳數1~5之烷氧基、碳數1~5之烷氧基烷基、乙醯氧基、羧基等。另外,該苯乙烯單位之含量為14重量%以上、50重量%以下之範圍內為較理想。更進一步,彈性體係重量平均分子量為10,000以上、200,000以下之範圍內為理想。 The elastic system preferably contains a styrene unit as a constituent unit of the main chain, and the "styrene unit" may have a substituent. Examples of the substituent include an alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an alkoxyalkyl group having 1 to 5 carbon atoms, an ethoxy group, a carboxyl group and the like. Further, the content of the styrene unit is preferably in the range of 14% by weight or more and 50% by weight or less. Furthermore, it is preferable that the weight average molecular weight of the elastic system is in the range of 10,000 or more and 200,000 or less.

如苯乙烯單位之含量為14重量%以上、50重量%以下之範圍內,彈性體之重量平均分子量為10,000以上、200,000以下之範圍內,則因為容易地溶解於後述的烴系之溶劑,所以可較容易且迅速地除去接著層。另外,藉由苯乙烯單位之含量及重量平均分子量為上述之範圍內,晶圓基板為對於供於阻劑微影步驟時所曝露的阻劑溶劑(例如PGMEA、PGME等)、酸(氫氟酸等)、鹼(TMAH等)發揮優異的耐性。 When the content of the styrene unit is in the range of 14% by weight or more and 50% by weight or less, the weight average molecular weight of the elastomer is in the range of 10,000 or more and 200,000 or less, because it is easily dissolved in a hydrocarbon-based solvent to be described later. The subsequent layer can be removed relatively easily and quickly. Further, by the content of the styrene unit and the weight average molecular weight within the above range, the wafer substrate is a resist solvent (for example, PGMEA, PGME, etc.) and an acid (hydrofluorocarbon) which are exposed when the resist lithography step is applied. Acid, etc., and alkali (TMAH, etc.) exert excellent tolerance.

尚,於彈性體亦可更混合上述的(甲基)丙烯酸酯。 Further, the above (meth) acrylate may be further blended in the elastomer.

苯乙烯單位之含量係較理想為17重量%以上,另外較理想為40重量%以下。 The content of the styrene unit is preferably 17% by weight or more, and more preferably 40% by weight or less.

重量平均分子量之較理想的範圍係20,000以上,另外,較理想的範圍係150,000以下。 The preferred range of the weight average molecular weight is 20,000 or more, and more preferably, the range is 150,000 or less.

作為彈性體係如苯乙烯單位之含量為14重量%以上、50重量%以下之範圍內,彈性體之重量平均分子 量為10,000以上、200,000以下之範圍內,則可使用各式各樣之彈性體。例如,可舉出聚苯乙烯-聚(乙烯/丙烯)嵌段共聚物(SEP)、苯乙烯-異戊二烯-苯乙烯嵌段共聚物(SIS)、苯乙烯-丁二烯-苯乙烯嵌段共聚物(SBS)、苯乙烯-丁二烯-丁烯-苯乙烯嵌段共聚物(SBBS)、以及,此等之氫化物、苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(SEBS)、苯乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(苯乙烯-異戊二烯-苯乙烯嵌段共聚物)(SEPS)、苯乙烯-乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(SEEPS)、苯乙烯嵌段為反應交聯型之苯乙烯-乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(SeptonV9461(kuraray公司製)、SeptonV9475(kuraray公司製))、苯乙烯嵌段為反應交聯型之苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(具有反應性之聚苯乙烯系硬嵌段的SeptonV9827(kuraray公司製))、聚苯乙烯-聚(乙烯-乙烯/丙烯)嵌段-聚苯乙烯嵌段共聚物(SEEPS-OH:末端氫氧基改質)等,可使用彈性體之苯乙烯單位之含量及重量平均分子量為上述之範圍內者。 As the content of the elastic system such as styrene unit, the weight average molecular weight of the elastomer is in the range of 14% by weight or more and 50% by weight or less. When the amount is in the range of 10,000 or more and 200,000 or less, a wide variety of elastomers can be used. For example, polystyrene-poly(ethylene/propylene) block copolymer (SEP), styrene-isoprene-styrene block copolymer (SIS), styrene-butadiene-styrene Block copolymer (SBS), styrene-butadiene-butene-styrene block copolymer (SBBS), and hydride, styrene-ethylene-butylene-styrene block copolymer (SEBS), styrene-ethylene-propylene-styrene block copolymer (styrene-isoprene-styrene block copolymer) (SEPS), styrene-ethylene-ethylene-propylene-styrene block The copolymer (SEEPS) and the styrene block are a reaction-crosslinked type styrene-ethylene-ethylene-propylene-styrene block copolymer (Septon V9461 (manufactured by Kuraray Co., Ltd.), Septon V9475 (manufactured by Kuraray Co., Ltd.)), and styrene-embedded The segment is a reaction-crosslinked type styrene-ethylene-butylene-styrene block copolymer (Septon V9827 (manufactured by Kuraray Co., Ltd.) having a reactive polystyrene-based hard block), and polystyrene-poly(ethylene- Ethylene/propylene) block-polystyrene block copolymer (SEEPS-OH: terminal hydroxyl group modification), etc., the content of the styrene unit of the elastomer and the weight average molecular weight can be used. By the above-described range.

另外,在彈性體中氫化物亦較理想。如為氫化物則對熱的安定性提高,難以產生分解或聚合等之變質。另外,由向烴系溶劑之溶解性及向阻劑溶劑之耐性之觀點亦較理想。 In addition, hydrides are also preferred in elastomers. In the case of a hydride, the stability to heat is improved, and deterioration such as decomposition or polymerization is hard to occur. Further, it is also preferable from the viewpoints of solubility in a hydrocarbon solvent and resistance to a solvent.

另外,在彈性體中兩端為苯乙烯之嵌段聚合物者亦較理想。將熱安定性高的苯乙烯嵌段於兩末端所以顯現出更高的耐熱性。 In addition, it is also preferred to have a block polymer of styrene at both ends of the elastomer. The styrene having high thermal stability is blocked at both ends, so that higher heat resistance is exhibited.

更具體而言係彈性體係苯乙烯及共軛二烯之嵌段共聚物之氫化物為較理想。對熱的安定性提高,難以產生分解或聚合等之變質。另外,以將熱安定性高的苯乙烯嵌段於兩末端而顯現出更高的耐熱性。更進一步,由向烴系溶劑之溶解性及向阻劑溶劑之耐性之觀點亦較理想。 More specifically, a hydride of a block copolymer of an elastomeric system of styrene and a conjugated diene is preferred. The stability to heat is increased, and it is difficult to cause deterioration such as decomposition or polymerization. Further, styrene having high thermal stability is blocked at both ends to exhibit higher heat resistance. Further, it is also preferable from the viewpoints of solubility to a hydrocarbon solvent and resistance to a resist solvent.

作為構成接著層3的接著劑所包含的彈性體而使用的市售品係例如可舉出kuraray公司製「Septon(商品名)」、kuraray公司製「HYBRAR(商品名)」、旭化成公司製「Tuftec(商品名)」、JSR公司製「DYNARON(商品名)」等。 For example, "Septon (trade name)" manufactured by Kuraray Co., Ltd., "HYBRAR (trade name)" manufactured by Kuraray Co., Ltd., and "Asahi Kasei Co., Ltd.", which are used as the elastomers to be used in the adhesives of the adhesive layer 3, may be used. "Tuftec (trade name)", "DYNARON (trade name)" manufactured by JSR Corporation.

作為構成接著層3的接著劑所包含的彈性體之含量係例如將接著劑組成物全量作為100重量份,在50重量份以上、99重量份以下之範圍內為理想,在60重量份以上、99重量份以下之範圍內為較理想,在70重量份以上、95重量份以下之範圍內為最理想。藉由設為該等範圍內,可一邊維持耐熱性、同時可合適地貼合基板與支撐板。 The content of the elastomer to be contained in the adhesive layer constituting the adhesive layer 3 is, for example, 100 parts by weight or more, preferably 50 parts by weight or more and 99 parts by weight or less, based on the total amount of the adhesive composition. It is preferably in the range of 99 parts by weight or less, and more preferably in the range of 70 parts by weight or more and 95 parts by weight or less. By setting it as such a range, it can hold|maintain the board|substrate and a support board suitably, while maintaining heat resistance.

另外,彈性體亦可混合複數之種類。總之,構成接著層3的接著劑亦可含有複數之種類之彈性體。然後,複數之種類之彈性體之中至少一個為作為主鏈之構成單位含有苯乙烯單位即可。另外,複數之種類之彈性體之中至少一個係如苯乙烯單位之含量為14重量%以上、50重量%以下之範圍內,或是,重量平均分子量為10,000以上、200,000以下之範圍內,則為本發明之範疇。另外,在構 成接著層3的接著劑,含有複數之種類之彈性體的情況,亦可以混合的結果、苯乙烯單位之含量成為上述之範圍內之方式調整。例如,若苯乙烯單位之含量為30重量%的kuraray公司製之Septon(商品名)之Septon4033、與苯乙烯單位之含量為13重量%的之Septon(商品名)之Septon2063以重量比1比1混合,則對於接著劑所包含的彈性體全體的苯乙烯含量係成為21~22重量%,因而成為14重量%以上。另外,例如將苯乙烯單位為10重量%者與60重量%者以重量比1比1混合則成為35重量%,成為上述之範圍內。本發明亦可為如此的形態。另外,構成接著層3的接著劑所含有的複數之種類之彈性體係全部在上述之範圍內含有苯乙烯單位,而且,上述之範圍內之重量平均分子量為最理想。 In addition, the elastomer may be mixed in a plurality of types. In short, the adhesive constituting the adhesive layer 3 may also contain a plurality of types of elastomers. Then, at least one of the plurality of types of elastomers may contain a styrene unit as a constituent unit of the main chain. Further, at least one of the plurality of types of elastomers is in the range of 14% by weight or more and 50% by weight or less, or the weight average molecular weight is in the range of 10,000 or more and 200,000 or less. It is the scope of the invention. In addition The adhesive which forms the adhesive layer 3 may contain a plurality of types of elastomers, and may be adjusted so that the content of the styrene unit and the content of the styrene unit are within the above range. For example, Septon 4033 of Septon (trade name) manufactured by Kuraray Co., Ltd., and Septon 2063 of Septon (trade name) having a styrene unit content of 13% by weight in a styrene unit ratio of 1 to 1 by weight. In the case of mixing, the styrene content of the entire elastomer contained in the adhesive is 21 to 22% by weight, and thus 14% by weight or more. In addition, for example, when the styrene unit is 10% by weight and the 60% by weight is mixed at a weight ratio of 1 to 1, the ratio is 35% by weight, which is within the above range. The invention may also be in such a form. Further, all of the plurality of types of elastic systems contained in the adhesive constituting the adhesive layer 3 contain styrene units within the above range, and the weight average molecular weight within the above range is most preferable.

尚,使用光硬化性樹脂(例如,UV硬化性樹脂)以外之樹脂而形成接著層3為理想。可防止使用光硬化性樹脂以外之樹脂,於接著層3之剝離或除去後,於基板1之微小的凹凸之周邊產生殘渣。特別是作為構成接著層3的接著劑係並非溶解於所有的溶劑,而是溶解於特定之溶劑為理想。此係因為並非於基板1施加物理性的力,而是藉由讓接著層3溶解於溶劑而可除去。在接著層3之除去時,即使由強度低下的基板1,也不使基板1破損、變形而可容易地除去接著層3。 It is preferable to form the adhesive layer 3 using a resin other than a photocurable resin (for example, a UV curable resin). It is possible to prevent the use of a resin other than the photocurable resin, and after the peeling or removal of the adhesive layer 3, a residue is generated around the minute unevenness of the substrate 1. In particular, it is preferable that the adhesive agent constituting the adhesive layer 3 is not dissolved in all the solvents but dissolved in a specific solvent. This is because the physical force is not applied to the substrate 1, but can be removed by dissolving the adhesive layer 3 in a solvent. When the adhesive layer 3 is removed, even if the substrate 1 having a low strength is not damaged or deformed, the adhesive layer 3 can be easily removed.

(聚碸系樹脂) (Polyfluorene resin)

用以形成接著層3的接著劑亦可含有聚碸系樹脂。藉由將接著層3以聚碸系樹脂形成,可製造即使在高溫處理層積體,亦可在之後之步驟溶解接著層,由基板剝離支撐板的層積體。如接著層3包含聚碸樹脂,則例如即使藉由退火等而將層積體以300℃以上的高溫處理的高溫製程,亦可合適地使用層積體。 The adhesive for forming the adhesive layer 3 may also contain a polyfluorene-based resin. By forming the adhesive layer 3 with a polyfluorene-based resin, it is possible to produce a laminate in which the support layer is peeled off from the substrate by dissolving the adhesive layer in a subsequent step even if the laminate is processed at a high temperature. When the adhesive layer 3 contains a polyfluorene resin, for example, a laminate may be suitably used in a high-temperature process in which the laminate is treated at a high temperature of 300 ° C or higher by annealing or the like.

聚碸系樹脂係具有由以下述一般式(3)所表示的構成單位,以及,以下述一般式(4)所表示的構成單位之中之至少1種之構成單位所構成的構造。 The polyfluorene-based resin has a structure composed of a constituent unit represented by the following general formula (3) and a constituent unit of at least one of the constituent units represented by the following general formula (4).

(在此,一般式(3)之R1、R2及R3、以及一般式(4)中之R1及R2係各自獨立而由伸苯基、伸萘基及伸蒽基所構成的群中選擇,X’係碳數為1以上、3以下之伸烷基)。 (here, R 1 , R 2 and R 3 of the general formula (3), and R 1 and R 2 in the general formula (4) are each independently composed of a phenylene group, an anthranyl group and a fluorene group. In the group, X' is a carbon group having a carbon number of 1 or more and 3 or less.

聚碸系樹脂係藉由具備以式(3)表示的聚碸構成單位及以式(4)表示的聚醚碸構成單位之中之至少1個,可形成一種層積體,其係貼附基板1與支撐板2後,即使在高的溫度條件處理基板1,亦可防止因分解及聚合而接著層3為不溶化。另外,聚碸系樹脂係如為以上述式(3)表示的聚碸構成單位所構成的聚碸樹脂,則即使加 熱至更高的溫度亦為安定。因此,可防止在洗淨後之基板1產生起因於接著層的殘渣。 The polyfluorene-based resin is formed by providing at least one of a polyfluorene constituent unit represented by the formula (3) and a polyether fluorene constituent unit represented by the formula (4), and is formed into a laminate which is attached. After the substrate 1 and the support plate 2, even if the substrate 1 is treated under high temperature conditions, the layer 3 can be prevented from being insolubilized by decomposition and polymerization. In addition, the polyfluorene-based resin is a polyfluorene resin composed of a polyfluorene constituent unit represented by the above formula (3), and even if it is added Heat to a higher temperature is also stable. Therefore, it is possible to prevent the substrate 1 after the cleaning from being caused by the residue of the adhesive layer.

聚碸系樹脂之重量平均分子量(Mw)係30,000以上、70,000以下之範圍內為理想,30,000以上、50,000以下之範圍內為較理想。如聚碸系樹脂之重量平均分子量(Mw)係30,000以上之範圍內,則例如可得到可在300℃以上之高的溫度使用的接著劑組成物。另外,如聚碸系樹脂之重量平均分子量(Mw)係70,000以下之範圍內,則可依溶劑而合適地溶解。亦即,可得到依溶劑而可合適地除去的接著劑組成物。 The weight average molecular weight (Mw) of the polyfluorene-based resin is preferably in the range of 30,000 or more and 70,000 or less, and more preferably in the range of 30,000 or more and 50,000 or less. When the weight average molecular weight (Mw) of the polyfluorene-based resin is in the range of 30,000 or more, for example, an adhesive composition which can be used at a temperature higher than 300 ° C can be obtained. Further, when the weight average molecular weight (Mw) of the polyfluorene-based resin is in the range of 70,000 or less, it can be suitably dissolved depending on the solvent. That is, an adhesive composition which can be suitably removed depending on the solvent can be obtained.

(稀釋溶劑) (diluted solvent)

作為形成接著層3時使用的稀釋溶劑係例如可舉出己烷、庚烷、辛烷、壬烷、甲基辛烷、癸烷、十一烷、十二烷、十三烷等之直鏈狀之烴、碳數4至15之支鏈狀之烴,例如,環己烷、環庚烷、環辛烷、萘、十氫萘、四氫萘等之環狀烴、對薄荷烷、鄰薄荷烷、間薄荷烷、二苯基薄荷烷、1,4-萜二醇、1,8-萜二醇、莰烷、降莰烷、蒎烷、側柏烷、蒈烷、長葉烯、香葉醇、橙花醇、沉香醇、檸檬醛、香茅醇、薄荷醇、異薄荷醇、新薄荷醇、α-萜品醇、β-萜品醇、γ-萜品醇、萜品烯-1-醇、萜品烯-4-醇、二氫萜品基乙酸酯、1,4-桉油醇、1,8-桉油醇、莰醇、香芹酮、紫羅蘭酮、側柏酮、樟腦、d-檸檬烯、l-檸檬烯、雙戊烯等之萜烯系溶劑;γ-丁內酯等之內酯類;丙酮、甲基 乙基酮、環己酮(CH)、甲基-n-戊基酮、甲基異戊基酮、2-庚酮等之酮類;乙二醇、二乙二醇、丙二醇、二丙二醇等之多價醇類;乙二醇單乙酸酯、二乙二醇單乙酸酯、丙二醇單乙酸酯、或二丙二醇單乙酸酯等之具有酯鍵的化合物、具有前述多價醇類或前述酯鍵的化合物之單甲基醚、單乙基醚、單丙基醚、單丁基醚等之單烷基醚或單苯基醚等之具有醚鍵的化合物等之多價醇類之衍生物(在此等之中係丙二醇單甲基醚乙酸酯(PGMEA)、丙二醇單甲基醚(PGME)為理想);如二噁烷般的環式醚類、或乳酸甲酯、乳酸乙酯(EL)、乙酸甲酯、乙酸乙酯、乙酸丁酯、甲氧基乙酸丁酯、丙酮酸甲酯、丙酮酸乙酯、甲氧基丙酸甲酯、乙氧基丙酸乙酯等之酯類;苯甲醚、乙基苄基醚、甲苯酚基甲基醚、二苯基醚、二苄基醚、苯乙醚、丁基苯基醚等之芳香族系有機溶劑等。 Examples of the diluent solvent used in forming the adhesive layer 3 include linear chains of hexane, heptane, octane, decane, methyl octane, decane, undecane, dodecane, and tridecane. a hydrocarbon having a hydrocarbon number of 4 to 15 and a cyclic hydrocarbon such as cyclohexane, cycloheptane, cyclooctane, naphthalene, decahydronaphthalene or tetrahydronaphthalene, p-menthane, ortho Mentane, metamentane, diphenyl menthane, 1,4-decanediol, 1,8-nonanediol, decane, norbornane, decane, oxane, decane, longene, Geraniol, nerol, linalool, citral, citronellol, menthol, isomenthol, neomenthol, alpha-terpineol, beta-terpineol, gamma-terpineol, terpinene -1-ol, terpinen-4-ol, indoline acetate, 1,4-nonyl oleyl alcohol, 1,8-nonyl oleyl alcohol, decyl alcohol, carvone, ionone, arborvitae Terpene solvent such as ketone, camphor, d-limonene, l-limonene, dipentene, etc.; lactones such as γ-butyrolactone; acetone, methyl Ketones such as ethyl ketone, cyclohexanone (CH), methyl-n-amyl ketone, methyl isoamyl ketone, and 2-heptanone; ethylene glycol, diethylene glycol, propylene glycol, dipropylene glycol, etc. a polyvalent alcohol; a compound having an ester bond such as ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate or dipropylene glycol monoacetate; and the above polyvalent alcohol Or a polyvalent alcohol such as a monomethyl ether of a compound of the above ester bond, a monoalkyl ether such as monoethyl ether, monopropyl ether or monobutyl ether, or a compound having an ether bond such as monophenyl ether. a derivative (in which propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME) is desirable); a cycloether such as dioxane, or methyl lactate, Ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, butyl methoxyacetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, ethyl ethoxypropionate An ester or the like; an aromatic organic solvent such as anisole, ethylbenzyl ether, cresyl methyl ether, diphenyl ether, dibenzyl ether, phenethyl ether or butylphenyl ether.

(其他之成分) (other ingredients)

構成接著層3的接著劑係在不損及本質上的特性的範圍,亦可更包含有混合性的其他物質。例如,可更使用用以改良接著劑之性能之附加的樹脂、可塑劑、接著補助劑、安定劑、著色劑、熱聚合抑制劑及界面活性劑等,所慣用的各種添加劑。 The adhesive constituting the adhesive layer 3 is also in a range that does not impair the essential properties, and may further contain other substances which are miscible. For example, various additives conventionally used for improving the performance of the adhesive, such as an additional resin, a plasticizer, a bonding agent, a stabilizer, a coloring agent, a thermal polymerization inhibitor, a surfactant, and the like can be used.

〔分離層4〕 [separation layer 4]

接著,所謂分離層4係藉由吸收經由支撐板2而照射 的光而變質的材料所形成的層。 Next, the separation layer 4 is irradiated by absorption through the support plate 2 The layer of light that is degraded by the material.

分離層4之厚度係例如,0.05μm以上、50μm以下之範圍內為較理想,0.3μm以上、1μm以下之範圍內為更理想。如分離層4之厚度為包括在0.05μm以上、50μm以下之範圍,則可藉由短時間之光之照射及低能量之光之照射,使分離層4產生所期望的變質。另外,分離層4之厚度係由生產性之觀點視之,包括在1μm以下之範圍為特別理想。 The thickness of the separation layer 4 is preferably in the range of 0.05 μm or more and 50 μm or less, and more preferably in the range of 0.3 μm or more and 1 μm or less. If the thickness of the separation layer 4 is in the range of 0.05 μm or more and 50 μm or less, the separation layer 4 can be subjected to desired deterioration by irradiation of light for a short period of time and irradiation of low-energy light. Further, the thickness of the separation layer 4 is preferably from the viewpoint of productivity, and is particularly preferably in the range of 1 μm or less.

尚,在層積體10,在分離層4與支撐板2之間亦可更形成其他層。在此情況,其他層係由透過光的材料所構成即可。由此,可適宜地追加不妨礙向分離層4之光之入射,對層積體10附予理想的性質等之層。依構成分離層4的材料之種類,可使用的光之波長不同。因而,構成其他層的材料係無讓全部之光透過的必要,由可使構成分離層4的材料變質的波長之光透過的材料可適宜地選擇。 Further, in the laminate 10, another layer may be formed between the separation layer 4 and the support plate 2. In this case, the other layers may be composed of a material that transmits light. In this way, it is possible to add a layer which does not interfere with the incidence of light to the separation layer 4, and which has an ideal property or the like attached to the laminate 10. The wavelength of light that can be used differs depending on the kind of material constituting the separation layer 4. Therefore, the material constituting the other layer is not required to transmit all of the light, and a material that transmits light of a wavelength at which the material constituting the separation layer 4 can be deteriorated can be appropriately selected.

另外,分離層4係僅由具有吸收光的構造的材料形成為理想,但在不損及本發明的本質上的特性的範圍,添加未具有吸收光的構造的材料,亦可形成分離層4。另外,在分離層4的相對於接著層3的側之面為平坦(未形成凹凸)為理想,由此,可容易地進行分離層4之形成,而且在貼附亦成為可均勻地貼附。 Further, the separation layer 4 is preferably formed of a material having a structure that absorbs light, but a separation layer 4 may be formed by adding a material having no structure that absorbs light in a range that does not impair the essential characteristics of the present invention. . Further, it is preferable that the surface of the separation layer 4 on the side opposite to the adhesion layer 3 is flat (no unevenness is formed), whereby the formation of the separation layer 4 can be easily performed, and the attachment can be uniformly attached. .

分離層4係按照基板及支撐板2之種類,以及,層積體所要求的性能而適宜地選擇該材料即可。在有 關本實施形態的支撐體分離方法係在以下所示的分離層之中,可較理想地使用藉由可照射透過由矽所構成的支撐板2的紅外線的CO2雷射而變質的分離層。 The separation layer 4 may be appropriately selected depending on the type of the substrate and the support plate 2 and the properties required for the laminate. In the support separation method according to the present embodiment, among the separation layers shown below, it is preferable to use a separation which is deteriorated by a CO 2 laser which can transmit infrared rays transmitted through the support plate 2 made of ruthenium. Floor.

(氟碳) (fluorocarbon)

分離層4亦可由氟碳所構成。藉由分離層4係以氟碳而構成,以吸收光而產生變質,作為其結果,失去接受光之照射前之強度或接著性。因而,藉由施加稍微的外力(例如,抬高支撐板2等),可破壞分離層4,可輕易地分離支撐板2與基板1。構成分離層4的氟碳係可藉由電漿CVD(化學氣相沈積)法而合適地成膜。 The separation layer 4 may also be composed of fluorocarbon. The separation layer 4 is made of fluorocarbon, and absorbs light to cause deterioration. As a result, the strength or adhesion before the irradiation of the received light is lost. Thus, by applying a slight external force (for example, raising the support plate 2 or the like), the separation layer 4 can be broken, and the support plate 2 and the substrate 1 can be easily separated. The fluorocarbon constituting the separation layer 4 can be suitably formed into a film by a plasma CVD (Chemical Vapor Deposition) method.

氟碳係依該種類而吸收具備固有之範圍之波長的光。藉由將使用在分離層4的氟碳吸收的範圍之波長之光照射於分離層,可使氟碳合適地變質。尚,在分離層4的光之吸收率係80%以上為理想。 Fluorocarbon absorbs light having a wavelength within a specific range depending on the type. The fluorocarbon can be suitably deteriorated by irradiating light of a wavelength in the range of absorption of fluorocarbon of the separation layer 4 to the separation layer. Further, it is preferable that the light absorption rate of the separation layer 4 is 80% or more.

作為照射於分離層4的光係依照氟碳可吸收的波長,例如適宜地使用YAG雷射、紅寶石雷射、玻璃雷射、YVO4雷射、LD雷射、光纖雷射等之固體雷射,色素雷射等之液體雷射,CO2雷射、準分子雷射、Ar雷射、He-Ne雷射等之氣體雷射、半導體雷射、自由電子雷射等之雷射光、或是非雷射光即可。作為可使氟碳變質的波長係不在此限定,例如可使用600nm以下之範圍者。 As the light system irradiated to the separation layer 4, a solid laser such as a YAG laser, a ruby laser, a glass laser, a YVO 4 laser, an LD laser, a fiber laser or the like is suitably used in accordance with a wavelength at which fluorocarbon can be absorbed. Laser lasers such as pigment lasers, laser beams such as CO 2 lasers, excimer lasers, Ar lasers, He-Ne lasers, semiconductor lasers, free electron lasers, etc. Laser light can be. The wavelength which can deteriorate the fluorocarbon is not limited thereto, and for example, a range of 600 nm or less can be used.

(將具有光吸收性的構造包含於該重複單位的聚合物) (A polymer having a light absorbing property is included in the polymer of the repeating unit)

分離層4係亦可含有將具有光吸收性的構造包含於該重複單位的聚合物。該聚合物係接受光之照射而變質。該聚合物之變質係藉由吸收照射上述構造的光而產生。分離層4係作為聚合物之變質之結果,失去接受光之照射前之強度或接著性。因而,藉由施加稍微的外力(例如,抬高支撐板2等),可破壞分離層4,可輕易地分離支撐板2與基板1。 The separation layer 4 may also contain a polymer containing a structure having light absorbability in the repeating unit. The polymer is degraded by irradiation with light. The deterioration of the polymer is produced by absorbing light that illuminates the above configuration. The separation layer 4 loses the strength or adhesion before the irradiation of the light as a result of the deterioration of the polymer. Thus, by applying a slight external force (for example, raising the support plate 2 or the like), the separation layer 4 can be broken, and the support plate 2 and the substrate 1 can be easily separated.

具有光吸收性的上述構造係吸收光,作為重複單位使含有該構造的聚合物變質的化學構造。該結構係例如含有由取代或非取代之苯環、縮合環或雜環所構成的共軛π電子系的原子團。更詳細而言,該結構係可為卡多構造、或存在於上述聚合物之側鏈的二苯基酮構造、二苯基亞碸構造、二苯基碸構造(雙苯基碸構造)、二苯基構造或二苯基胺構造。 The above structure having light absorbability absorbs light, and a chemical structure which deteriorates a polymer containing the structure as a repeating unit. This structure is, for example, a conjugated π-electron atomic group composed of a substituted or unsubstituted benzene ring, a condensed ring or a heterocyclic ring. More specifically, the structure may be a cardo structure, a diphenyl ketone structure present in a side chain of the polymer, a diphenyl fluorene structure, a diphenyl fluorene structure (diphenyl fluorene structure), Diphenyl structure or diphenylamine structure.

在上述構造為存在於上述聚合物之側鏈的情況,該構造係藉由以下之式而可表示。 In the case where the above configuration is present in the side chain of the above polymer, the structure can be represented by the following formula.

(式中,R係各自獨立的烷基、芳基、鹵素、氫氧基、酮基、亞碸基、磺基或N(R4)(R5)(在此,R4及R5係各自獨立的氫原子或碳數1~5之烷基)、Z係不存在或-CO-、-SO2-、-SO-或是-NH-,n為0或1~5之整數)。 (wherein R is independently an alkyl group, an aryl group, a halogen, a hydroxyl group, a ketone group, an anthranylene group, a sulfo group or N(R 4 )(R 5 ) (here, R 4 and R 5 are each Each of the independent hydrogen atoms or the alkyl group having 1 to 5 carbon atoms, the Z system is absent or -CO-, -SO 2 -, -SO- or -NH-, and n is 0 or an integer of 1 to 5).

另外,上述聚合物係例如含有在以下之式之中,以(a)~(d)之任一表示的重複單位、或以(e)表示、或將(f)之構造包含於該主鏈。 Further, the polymer is contained, for example, in the following formula, and the repeating unit represented by any one of (a) to (d), or (e) or the structure of (f) is included in the main chain. .

(式中,l為1以上之整數、m為0或1~2之整數、X為在(a)~(e)上述之“化3”所示的式之任一者、在(f)為上述之“化3”所示的式之任一者、或不存在、Y1及Y2係各自獨立的-CO-或SO2-。l係理想為10以下之整數)。 (wherein, l is an integer of 1 or more, m is an integer of 0 or 1 to 2, and X is any one of the formulas shown by (a) to (e) above-mentioned "chemical 3", in (f) Any one of the formulas shown in the above "Chemical Formula 3" or the absence of -CO- or SO 2 -1 which is independent of each of Y 1 and Y 2 is preferably an integer of 10 or less).

作為上述之“化3”所表示的苯環、縮合環及雜環之例 係可舉出苯基、取代苯基、苄基、取代苄基、萘、取代萘、蒽、取代蒽、蒽醌、取代蒽醌、吖啶、取代吖啶、偶氮苯、取代偶氮苯、螢光胺、取代螢光胺、Furuorimon、取代Furuorimon、咔唑、取代咔唑、N-烷基咔唑、二苯並呋喃、取代二苯並呋喃、菲、取代菲、芘、取代芘。在已例示的取代基為更具有取代基的情況,該取代基係例由烷基、芳基、鹵素原子、烷氧基、硝基、醛類、氰基、醯胺、二烷基胺基、磺醯胺、醯亞胺、接酸、羧酸酯、磺酸、磺酸酯、烷基胺基及芳基胺基選擇。 Examples of the benzene ring, the condensed ring and the hetero ring represented by the above "Chemical 3" The phenyl group, substituted phenyl group, benzyl group, substituted benzyl group, naphthalene, substituted naphthalene, anthracene, substituted anthracene, anthracene, substituted anthracene, acridine, substituted acridine, azobenzene, substituted azobenzene , fluorescamine, substituted fluorescamine, Furuorimon, substituted Furuorimon, carbazole, substituted carbazole, N-alkylcarbazole, dibenzofuran, substituted dibenzofuran, phenanthrene, substituted phenanthrene, anthracene, substituted hydrazine. In the case where the exemplified substituent is a more substituent, the substituent is exemplified by an alkyl group, an aryl group, a halogen atom, an alkoxy group, a nitro group, an aldehyde group, a cyano group, a decylamine group, or a dialkylamino group. , sulfonamide, quinone imine, acid, carboxylate, sulfonic acid, sulfonate, alkylamine and arylamine.

上述之“化3”所示的取代基之中,具有2個苯基的第5個之取代基,作為Z為-SO2-的情況之例係可舉出雙(2,4-二羥苯基)碸、雙(3,4-二羥苯基)碸、雙(3,5-二羥苯基)碸、雙(3,6-二羥苯基)碸、雙(4-羥苯基)碸、雙(3-羥苯基)碸、雙(2-羥苯基)碸、及雙(3,5-二甲基-4-羥苯基)碸等。 Among the substituents represented by the above-mentioned "Chemical Formula 3", the fifth substituent having two phenyl groups, and the case where Z is -SO 2 - is exemplified by bis(2,4-dihydroxyl). Phenyl) anthracene, bis(3,4-dihydroxyphenyl)anthracene, bis(3,5-dihydroxyphenyl)anthracene, bis(3,6-dihydroxyphenyl)anthracene, bis(4-hydroxybenzene) Base) bismuth, bis(3-hydroxyphenyl)anthracene, bis(2-hydroxyphenyl)anthracene, and bis(3,5-dimethyl-4-hydroxyphenyl)anthracene.

上述之“化3”所示的取代基之中,具有2個苯基的第5個之取代基,作為Z為-SO-的情況之例係可舉出雙(2,3-二羥苯基)亞碸、雙(5-氯-2,3-二羥苯基)亞碸、雙(2,4-二羥苯基)亞碸、雙(2,4-二羥基-6-甲基苯基)亞碸、雙(5-氯-2,4-二羥苯基)亞碸、雙(2,5-二羥苯基)亞碸、雙(3,4-二羥苯基)亞碸、雙(3,5-二羥苯基)亞碸、雙(2,3,4-三羥苯基)亞碸、雙(2,3,4-三羥基-6-甲基苯基)亞碸、雙(5-氯-2,3,4-三羥苯基)亞碸、雙(2,4,6-三羥苯基)亞碸、雙(5-氯-2,4,6-三羥苯基)亞 碸等。 Among the substituents represented by the above-mentioned "Chemical 3", the fifth substituent having two phenyl groups, and the case where Z is -SO-, bis(2,3-dihydroxybenzene) Athene, bis(5-chloro-2,3-dihydroxyphenyl)arylene, bis(2,4-dihydroxyphenyl)arene, bis(2,4-dihydroxy-6-methyl Phenyl) anthracene, bis(5-chloro-2,4-dihydroxyphenyl)arylene, bis(2,5-dihydroxyphenyl)anthracene, bis(3,4-dihydroxyphenyl) Anthraquinone, bis(3,5-dihydroxyphenyl)arylene, bis(2,3,4-trihydroxyphenyl)anthracene, bis(2,3,4-trihydroxy-6-methylphenyl) Azulene, bis(5-chloro-2,3,4-trihydroxyphenyl)arylene, bis(2,4,6-trihydroxyphenyl)arene, bis(5-chloro-2,4,6 -trihydroxyphenyl) Hey.

上述之“化3”所示的取代基之中,具有2個苯基的第5個之取代基,作為Z為-C(=O)-的情況之例係可舉出2,4-二羥基二苯甲酮、2,3,4-三羥基二苯甲酮、2,2’,4,4’-四羥基二苯甲酮、2,2’,5,6’-四羥基二苯甲酮、2-羥基-4-甲氧基二苯甲酮、2-羥基-4-辛氧基二苯甲酮、2-羥基-4-十二烷基二苯甲酮、2,2’-二羥基-4-甲氧基二苯甲酮、2,6-二羥基-4-甲氧基二苯甲酮、2,2’-二羥基-4,4’-二甲氧基二苯甲酮、4-胺基-2’-羥基二苯甲酮、4-二甲基胺基-2’-羥基二苯甲酮、4-二乙基胺基-2’-羥基二苯甲酮、4-二甲基胺基-4’-甲氧基-2’-羥基二苯甲酮、4-二甲基胺基-2’,4’-二羥基二苯甲酮、及4-二甲基胺基-3’,4’-二羥基二苯甲酮等。 Among the substituents represented by the above "Chemical 3", the fifth substituent having two phenyl groups, and examples in the case where Z is -C(=O)-, 2,4-di Hydroxybenzophenone, 2,3,4-trihydroxybenzophenone, 2,2',4,4'-tetrahydroxybenzophenone, 2,2',5,6'-tetrahydroxydiphenyl Methyl ketone, 2-hydroxy-4-methoxybenzophenone, 2-hydroxy-4-octyloxybenzophenone, 2-hydroxy-4-dodecylbenzophenone, 2,2' -dihydroxy-4-methoxybenzophenone, 2,6-dihydroxy-4-methoxybenzophenone, 2,2'-dihydroxy-4,4'-dimethoxydiphenyl Methyl ketone, 4-amino-2'-hydroxybenzophenone, 4-dimethylamino-2'-hydroxybenzophenone, 4-diethylamino-2'-hydroxybenzophenone , 4-dimethylamino-4'-methoxy-2'-hydroxybenzophenone, 4-dimethylamino-2',4'-dihydroxybenzophenone, and 4-di Methylamino-3',4'-dihydroxybenzophenone and the like.

在上述構造為存在於上述聚合物之側鏈的情況,包含上述構造的重複單位之占有上述聚合物的比例係在成為分離層4之光之透過率為0.001%以上、10%以下的範圍內。如以該比例為包括於如此的範圍之方式調製聚合物,則分離層4為充分地吸收光,可確實且迅速地變質。亦即,由層積體10之支撐板2之除去為容易,可使在該除去所必要的光之照射時間縮短。 In the case where the above-described structure is present in the side chain of the polymer, the ratio of the above-mentioned polymer in the repeating unit including the above-described structure is such that the transmittance of light to be the separation layer 4 is in the range of 0.001% or more and 10% or less. . When the polymer is prepared so as to be included in such a range, the separation layer 4 sufficiently absorbs light and can be deteriorated reliably and rapidly. That is, it is easy to remove the support plate 2 of the laminated body 10, and the irradiation time of the light necessary for the removal can be shortened.

上述構造係藉由該種類之選擇,可吸收具有所期望之範圍之波長的光。例如,上述構造可吸收的光之波長係100nm以上、2,000nm以下之範圍內為較理想。此之範圍內之中,上述構造可吸收的光之波長係較短波長 側,例如為100nm以上、500nm以下之範圍內。例如,上述構造係理想為藉由吸收具有大約300nm以上、370nm以下之範圍內之波長的紫外光,可使含有該構造的聚合物變質。 The above structure is capable of absorbing light having a wavelength of a desired range by the choice of the kind. For example, it is preferable that the wavelength of light absorbable by the above structure is in the range of 100 nm or more and 2,000 nm or less. Within this range, the wavelength of light that can be absorbed by the above structure is shorter wavelength The side is, for example, in the range of 100 nm or more and 500 nm or less. For example, the above configuration is desirably such that the polymer containing the structure can be deteriorated by absorbing ultraviolet light having a wavelength in the range of about 300 nm or more and 370 nm or less.

上述構造可吸收的光係例如高壓水銀燈(波長範圍:254nm以上、436nm以下)、KrF準分子雷射(波長:248nm)、ArF準分子雷射(波長:193nm)、F2準分子雷射(波長:157nm)、XeCl雷射(波長:308nm)、XeF雷射(波長:351nm)或是固體UV雷射(波長:355nm)所發出的光、g線(波長:436nm)、h線(波長:405nm)或i線(波長:365nm)等。 The above-structured absorbable light system such as a high pressure mercury lamp (wavelength range: 254 nm or more, 436 nm or less), KrF excimer laser (wavelength: 248 nm), ArF excimer laser (wavelength: 193 nm), F2 excimer laser (wavelength) : 157 nm), XeCl laser (wavelength: 308 nm), XeF laser (wavelength: 351 nm) or solid UV laser (wavelength: 355 nm), light, g-line (wavelength: 436 nm), h-line (wavelength: 405 nm) or i line (wavelength: 365 nm) or the like.

上述的分離層4係含有作為重複單位包含上述構造的聚合物,但分離層4係更進一步,可含有上述聚合物以外之成分。作為該成分係可舉出填料、可塑劑及可提高支撐板2之剝離性的成分等。此等之成分係由不妨礙或促進依上述構造的光之吸收、以及聚合物之變質的先前一般周知之物質或材料中可適宜地選擇。 The separation layer 4 described above contains a polymer having the above structure as a repeating unit, but the separation layer 4 is further contained, and may contain components other than the above polymer. Examples of the component include a filler, a plasticizer, and a component which can improve the peelability of the support plate 2. These components are suitably selected from substances or materials which have not been impeded or promoted by the absorption of light according to the above structure and the deterioration of the polymer.

(無機物) (inorganic matter)

分離層4亦可由無機物所構成。藉由分離層4係以無機物而構成,以吸收光而產生變質,作為其結果,失去接受光之照射前之強度或接著性。因而,藉由施加稍微的外力(例如,抬高支撐板2等),可破壞分離層4,可輕易地分離支撐板2與基板1。 The separation layer 4 can also be composed of an inorganic substance. The separation layer 4 is made of an inorganic substance, and absorbs light to cause deterioration. As a result, the strength or adhesion before the irradiation of the received light is lost. Thus, by applying a slight external force (for example, raising the support plate 2 or the like), the separation layer 4 can be broken, and the support plate 2 and the substrate 1 can be easily separated.

上述無機物係如為藉由吸收光而變質的構成即可,例如可合適地使用由金屬、金屬化合物及碳所構成的群中選擇的1種以上之無機物。所謂金屬化合物係指含有金屬原子的化合物,例如可為金屬氧化物、金屬氮化物。作為如此的無機物之例示係不限定於此,可舉出由金、銀、銅、鐵、鎳、鋁、鈦、鉻、SiO2、SiN、Si3N4、TiN及碳所構成的群中選擇1種以上之無機物。尚,所謂碳係亦可含有碳之同素異形體的概念,例如、可為鑽石、富勒烯、類鑽碳、奈米碳管等。 The inorganic material may be formed by absorbing light, and for example, one or more inorganic substances selected from the group consisting of a metal, a metal compound, and carbon may be suitably used. The metal compound refers to a compound containing a metal atom, and may be, for example, a metal oxide or a metal nitride. Examples of such inorganic substances are not limited thereto, and examples thereof include a group consisting of gold, silver, copper, iron, nickel, aluminum, titanium, chromium, SiO 2 , SiN, Si 3 N 4 , TiN, and carbon. One or more inorganic substances are selected. Further, the carbon system may also contain the concept of a carbon allotrope, and may be, for example, diamond, fullerene, diamond-like carbon, or carbon nanotube.

上述無機物係依該種類而吸收具備固有之範圍之波長的光。藉由將使用在分離層4的無機物吸收的範圍之波長之光照射於分離層,可使上述無機物合適地變質。 The inorganic substance absorbs light having a wavelength in a specific range depending on the type. The above inorganic substance can be suitably deteriorated by irradiating light of a wavelength in a range in which the inorganic substance in the separation layer 4 is absorbed to the separation layer.

作為照射於由無機物所構成的分離層4的光係依照上述無機物可吸收的波長,例如適宜地使用YAG雷射、紅寶石雷射、玻璃雷射、YVO4雷射、LD雷射、光纖雷射等之固體雷射,色素雷射等之液體雷射,CO2雷射、準分子雷射、Ar雷射、He-Ne雷射等之氣體雷射、半導體雷射、自由電子雷射等之雷射光、或是非雷射光即可。 The light system irradiated to the separation layer 4 composed of an inorganic substance is, for example, a YAG laser, a ruby laser, a glass laser, a YVO 4 laser, an LD laser, or a fiber laser, in accordance with a wavelength absorbable by the inorganic substance. Liquid lasers such as solid lasers, pigment lasers, gas lasers such as CO 2 lasers, excimer lasers, Ar lasers, He-Ne lasers, semiconductor lasers, free electron lasers, etc. Laser light or non-laser light can be used.

由無機物所構成的分離層4係例如藉由濺鍍、化學氣相沈積(CVD)、鍍覆、電漿CVD、旋轉塗佈等之一般周知之技術,可形成於支撐板2上。由無機物所構成的分離層4之厚度係無特別限定,如為可充分吸收 所使用的光的膜厚即可,例如設為0.05μm以上、10μm以下之範圍內之膜厚為較理想。另外,亦可在構成分離層4的無機物所構成的無機膜(例如,金屬膜)之兩面或一面事先塗佈接著劑,貼附於支撐板2及基板1。 The separation layer 4 composed of an inorganic material can be formed on the support plate 2 by, for example, a generally known technique such as sputtering, chemical vapor deposition (CVD), plating, plasma CVD, or spin coating. The thickness of the separation layer 4 composed of an inorganic substance is not particularly limited, as it is sufficiently absorbable The film thickness of the light to be used may be, for example, preferably a film thickness of 0.05 μm or more and 10 μm or less. In addition, an adhesive may be applied to both sides or one surface of an inorganic film (for example, a metal film) composed of an inorganic material constituting the separation layer 4, and attached to the support plate 2 and the substrate 1.

尚,在作為分離層4使用金屬膜的情況係藉由分離層4之膜質、雷射光源之種類、雷射輸出等之條件係可產生雷射之反射或向膜之帶電等。因此,以將防反射膜或防帶電膜設置於分離層4之上下或任一方,謀求該等之對策為理想。 In the case where a metal film is used as the separation layer 4, it is possible to generate a reflection of a laser or a charge to a film by the conditions of the film quality of the separation layer 4, the type of the laser light source, and the laser output. Therefore, it is preferable to provide an anti-reflection film or an anti-static film on the upper or lower side of the separation layer 4, and to achieve such countermeasures.

(具有紅外線吸收性之構造的化合物) (a compound having an infrared absorbing structure)

分離層4係亦可藉由具有紅外線吸收性之構造的化合物而形成。該化合物係藉由吸收紅外線而變質。分離層4係作為化合物之變質之結果,失去接受紅外線之照射前之強度或接著性。因而,藉由施加稍微的外力(例如,抬高支撐板2等),可破壞分離層4,可輕易地分離支撐板2與基板1。 The separation layer 4 can also be formed by a compound having an infrared absorbing structure. This compound is degraded by absorption of infrared rays. The separation layer 4 loses strength or adhesion before irradiation with infrared rays as a result of deterioration of the compound. Thus, by applying a slight external force (for example, raising the support plate 2 or the like), the separation layer 4 can be broken, and the support plate 2 and the substrate 1 can be easily separated.

作為具有紅外線吸收性的構造、或是含有具有紅外線吸收性的構造的化合物係例如可為烷烴、烯烴(乙烯基、反式、順式、亞乙烯、三取代、四取代、共軛、累積多烯、環式)、炔烴(一取代、二取代)、單環式芳香族(苯、一取代、二取代、三取代)、醇及酚類(OH自由基、分子內氫鍵、分子間氫鍵、飽和第二級、飽和第三級、不飽和第二級、不飽和第三級)、縮醛、縮 酮、脂肪族醚、芳香族醚、乙烯基醚、環氧乙烷環醚、過氧化物醚、酮、二烷羰基、芳香族羰基、1,3-二酮之烯醇、o-羥基芳基酮、二烷基醛、芳香族醛、羧酸(二聚物,羧酸陰離子)、甲酸酯、乙酸酯、共軛酯、非共軛酯、芳香族酯、內酯(β-、γ-、δ-)、脂肪族酸氯化物、芳香族酸氯化物、酸酐(共軛、非共軛、環式、非環式)、一級醯胺、二級醯胺、內醯胺、一級胺(脂肪族、芳香族)、二級胺(脂肪族、芳香族)、三級胺(脂肪族、芳香族)、一級胺鹽、二級胺鹽、三級胺鹽、銨離子、脂肪族腈、芳香族腈、碳二醯亞胺、脂肪族異腈、芳香族異腈、異氰酸酯、硫氰酸酯、脂肪族硫氰酸酯、芳香族硫氰酸酯、脂肪族硝化合物、芳香族硝化合物、硝胺、亞硝胺、硝酸酯、亞硝酸酯、亞硝基鍵(脂肪族、芳香族、單體、二聚物)、硫醇、硫酚及硫酸等之硫化合物、硫羰基、亞碸、碸、磺醯氯、一級磺醯胺、二級磺醯胺、硫酸酯、碳-鹵素鍵、Si-A1鍵(A1係H、C、O或鹵素)、P-A2鍵(A2係H、C或O)、或Ti-O鍵。 The structure having an infrared absorbing property or a structure containing an infrared absorbing property may be, for example, an alkane or an olefin (vinyl, trans, cis, vinylidene, trisubstituted, tetrasubstituted, conjugated, or cumulative). Alkene, cyclic formula, alkyne (monosubstituted, disubstituted), monocyclic aromatic (benzene, monosubstituted, disubstituted, trisubstituted), alcohol and phenol (OH radical, intramolecular hydrogen bond, intermolecular Hydrogen bond, saturated second stage, saturated third stage, unsaturated second stage, unsaturated third stage), acetal, ketal, aliphatic ether, aromatic ether, vinyl ether, oxirane cyclic ether , peroxide ether, ketone, dialkylcarbonyl, aromatic carbonyl, 1,3-diketone enol, o-hydroxyaryl ketone, dialkyl aldehyde, aromatic aldehyde, carboxylic acid (dimer, carboxy Acid anion), formate, acetate, conjugated ester, non-conjugated ester, aromatic ester, lactone (β-, γ-, δ-), aliphatic acid chloride, aromatic acid chloride, Anhydride (conjugated, non-conjugated, cyclic, acyclic), primary guanamine, secondary guanamine, indoleamine, primary amine (aliphatic, aromatic), secondary amine (fat) Family, aromatic), tertiary amine (aliphatic, aromatic), primary amine salt, secondary amine salt, tertiary amine salt, ammonium ion, aliphatic nitrile, aromatic nitrile, carbodiimide, aliphatic Isonitrile, aromatic isonitrile, isocyanate, thiocyanate, aliphatic thiocyanate, aromatic thiocyanate, aliphatic nitrate compound, aromatic nitrate compound, nitramine, nitrosamine, nitrate, sub Nitrate, nitroso bond (aliphatic, aromatic, monomeric, dimer), sulfur compounds such as thiol, thiophenol and sulfuric acid, thiocarbonyl, hydrazine, hydrazine, sulfonium chloride, primary sulfonamide , a second sulfonamide, a sulfate, a carbon-halogen bond, a Si-A 1 bond (A 1 H, C, O or halogen), a PA 2 bond (A 2 H, C or O), or Ti- O key.

作為含有上述碳數-鹵素鍵結的結構式係例如可舉出-CH2Cl、-CH2Br、-CH2I、-CF2-、-CF3、-CH=CF2、-CF=CF2、氟化芳基、及氯化芳基等。 Examples of the structural formula containing the above carbon number-halogen bond include -CH 2 Cl, -CH 2 Br, -CH 2 I, -CF 2 -, -CF 3 , -CH=CF 2 , -CF=. CF 2 , fluorinated aryl, and aryl chloride.

作為含有上述Si-A1鍵結的構造係可舉出SiH、SiH2、SiH3、Si-CH3、Si-CH2-、Si-C6H5、SiO-脂肪族、Si-OCH3、Si-OCH2CH3、Si-OC6H5、Si-O-Si、Si-OH、SiF、SiF2、及SiF3等。作為含有Si-A1鍵結的構造 係特別是形成矽氧烷骨架及倍半矽氧烷骨架為理想。 Examples of the structure including the Si—A 1 bond include SiH, SiH 2 , SiH 3 , Si—CH 3 , Si—CH 2 —, Si—C 6 H 5 , SiO—aliphatic, and Si—OCH 3 . , Si—OCH 2 CH 3 , Si—OC 6 H 5 , Si—O—Si, Si—OH, SiF, SiF 2 , and SiF 3 . The structure containing a Si-A 1 bond is particularly preferably a naphthene skeleton and a sesquiterpene skeleton.

作為含有上述P-A2鍵結的構造係可舉出PH、PH2、P-CH3、P-CH2-、P-C6H5、A3 3-P-O(A3係脂肪族或芳香族)、(A4O)3-P-O(A4係烷基)、P-OCH3、P-OCH2CH3、P-OC6H5、P-O-P、P-OH、及O=P-OH等。 Examples of the structure including the PA 2 bond include PH, PH 2 , P-CH 3 , P-CH 2 -, PC 6 H 5 , and A 3 3 -PO (A 3 aliphatic or aromatic). (A 4 O) 3- PO (A 4 alkyl group), P-OCH 3 , P-OCH 2 CH 3 , P-OC 6 H 5 , POP, P-OH, and O=P-OH.

上述構造係藉由該種類之選擇,可吸收具有所期望之範圍之波長的紅外線。具體而言係上述構造為可吸收的紅外線之波長係例如1μm以上、20μm以下之範圍內,在2μm以上、15μm以下之範圍內可較合適地吸收。更進一步,於上述構造為Si-O鍵結、Si-C鍵結及Ti-O鍵結的情況係可為9μm以上、11μm以下之範圍內。尚,各構造可吸收的紅外線之波長係該業者則可容易地理解。例如,作為在各構造的吸收帶,可參照非專利文獻:SILVERSTEIN.BASSLER.MORRILL著「依有機化合物之光譜的鑒定法(第5版)-MS、IR、NMR、UV之併用-」(1992年發行)第146頁~第151頁之記載。 The above structure is capable of absorbing infrared rays having a wavelength of a desired range by the selection of the kind. Specifically, the wavelength of the infrared ray which can be absorbed is, for example, in the range of 1 μm or more and 20 μm or less, and can be suitably absorbed in the range of 2 μm or more and 15 μm or less. Further, in the case where the above structure is Si-O bonding, Si-C bonding, and Ti-O bonding, it may be in the range of 9 μm or more and 11 μm or less. Still, the wavelength of the infrared light that can be absorbed by each structure can be easily understood by the industry. For example, as an absorption band in each configuration, reference can be made to the non-patent document: SILVERSTEIN. BASSLER. MORRILL is described in "Identification of Spectra of Organic Compounds (5th Edition) - Combination of MS, IR, NMR, and UV-" (published in 1992) on pages 146 to 151.

作為被使用於分離層4之形成,具有紅外線吸收性之結構式的化合物係在具有如上述之構造的化合物之中,如為可為了塗佈而溶解於溶媒,可固化而形成固層者,則無特別限定。然而,於使在分離層4的化合物有效果地變質,容易將支撐板2與基板1分離係理想為在分離層4的紅外線之吸收大,亦即,於分離層4照射紅外線時之紅外線之透過率低。具體而言係在分離層4的紅外線之透過率為低於90%為理想,紅外線之透過率為低於80%為 較理想。 As a compound to be used for the formation of the separation layer 4, a compound having a structural formula of infrared absorbing property is a compound having a structure as described above, and if it is soluble in a solvent for coating, it can be cured to form a solid layer. There is no particular limitation. However, in order to effectively deteriorate the compound in the separation layer 4, it is preferable to separate the support plate 2 from the substrate 1 so that the absorption of infrared rays in the separation layer 4 is large, that is, the infrared rays when the separation layer 4 is irradiated with infrared rays. The transmission rate is low. Specifically, it is preferable that the transmittance of infrared rays in the separation layer 4 is less than 90%, and the transmittance of infrared rays is less than 80%. More ideal.

如舉出一例而說明,則作為具有矽氧烷骨架的化合物係例如可使用以下述化學式(5)所表示的重複單位及以下述化學式(6)所表示的重複單位之共聚物的樹脂、或是以下述化學式(5)所表示的重複單位及來自丙烯酸系化合物之重複單位之共聚物的樹脂。 As an example of the compound having a oxoxane skeleton, for example, a resin having a repeating unit represented by the following chemical formula (5) and a copolymer of a repeating unit represented by the following chemical formula (6), or It is a resin which is a repeating unit represented by the following chemical formula (5) and a copolymer derived from a repeating unit of an acrylic compound.

(化學式(6)中,R6係氫、碳數10以下之烷基、或碳數10以下之烷氧基)。 (In the chemical formula (6), R 6 is hydrogen, an alkyl group having 10 or less carbon atoms, or an alkoxy group having 10 or less carbon atoms).

其中,作為具有矽氧烷骨架的化合物係以上述化學式(5)所表示的重複單位及以下述化學式(7)所表示的重複單位之共聚物的t-丁基苯乙烯(TBST)-二甲基矽氧烷共聚物為較理想,將以上述化學式(5)所表示的重複單位及以下述化學式(7)所表示的重複單位以1:1含有,TBST-二甲基矽氧烷共聚物為更理想。 In the above, the compound having a fluorinated alkane skeleton is a t-butyl styrene (TBST)-dimethyl group which is a repeating unit represented by the above chemical formula (5) and a repeating unit represented by the following chemical formula (7). The hydrazine-based oxyalkylene copolymer is preferably contained in a repeating unit represented by the above chemical formula (5) and a repeating unit represented by the following chemical formula (7) in a ratio of 1:1, TBST-dimethyloxane copolymer For the better.

另外作為具有倍半矽氧烷骨架的化合物,例如,可使用將以下述化學式(8)所表示的重複單位及以下述化學式(9)所表示的重複單位之共聚物的樹脂。 Further, as the compound having a sesquiterpene oxide skeleton, for example, a resin having a copolymer of a repeating unit represented by the following chemical formula (8) and a repeating unit represented by the following chemical formula (9) can be used.

(化學式(8)中,R7係氫或碳數1以上、10以下之烷基、化學式(9)中,R8係碳數1以上、10以下之烷基或苯基)。 (In the chemical formula (8), R 7 is hydrogen or an alkyl group having 1 or more and 10 or less carbon atoms, and in the chemical formula (9), R 8 is an alkyl group having 1 or more and 10 or less carbon atoms or a phenyl group).

作為具有倍半矽氧烷骨架的化合物係除此以外亦可合 適地利用在日本特開2007-258663號公報(2007年10月4日公開)、日本特開2010-120901號公報(2010年6月3日公開)、日本特開2009-263316號公報(2009年11月12日公開)、以及日本特開2009-263596號公報(2009年11月12日公開)所開示的各倍半矽氧烷樹脂。 The compound having a sesquiterpene skeleton may be combined with In Japan, JP-A-2007-258663 (published on October 4, 2007), JP-A-2010-120901 (published on June 3, 2010), and JP-A-2009-263316 (2009) Each of the sesquioxaxane resins disclosed in Japanese Laid-Open Patent Publication No. 2009-263596 (published on Nov. 12, 2009).

其中,作為具有倍半矽氧烷骨架的化合物係以下述化學式(10)所表示的重複單位及以下述化學式(11)所表示的重複單位之共聚物為較理想,將以下述化學式(10)所表示的重複單位及以下述化學式(11)所表示的重複單位以7:3含有的共聚物為更理想。 In particular, the compound having a sesquiterpene skeleton is preferably a repeating unit represented by the following chemical formula (10) and a repeating unit represented by the following chemical formula (11), and is preferably the following chemical formula (10) The repeating unit shown and the repeating unit represented by the following chemical formula (11) are more preferably a copolymer of 7:3.

作為具有倍半矽氧烷骨架的聚合物係可有隨機結構、梯形結構、籠型結構,而任一之構造均可。 The polymer having a sesquiterpene skeleton may have a random structure, a trapezoidal structure, or a cage structure, and any of the structures may be used.

另外,含有Ti-O鍵結的化合物係例如可舉出 (i)四-i-丙氧基鈦、四-n-丁氧基鈦、肆(2-乙基己氧基)鈦、及鈦-i-丙氧基伸辛基乙醇酸酯等之烷氧基鈦;(ii)二-i-丙氧基‧雙(乙醯丙酮)鈦、及丙烷二氧基鈦雙(乙基乙醯乙酸酯)等之螯合鈦;(iii)i-C3H7O-[-Ti(O-i-C3H7)2-O-]n-i-C3H7、及n-C4H9O-[-Ti(O-n-C4H9)2-O-]n-n-C4H9等之鈦聚合物;(iv)三-n-丁氧基鈦單硬脂酸酯、硬脂酸鈦、二-i-丙氧基鈦二異硬脂酸酯、及(2-n-丁氧基羰基苯甲醯氧基)三丁氧基鈦等之醯化物鈦;(v)二-n-丁氧基‧雙(三乙醇胺酮)鈦等之水溶性鈦化合物等。 Further, examples of the compound containing a Ti-O bond include (i) tetra-i-propoxy titanium, tetra-n-butoxy titanium, ruthenium (2-ethylhexyloxy) titanium, and titanium. Alkoxy titanium such as -i-propoxy octyl glycolate; (ii) di-i-propoxy bis (acetyl acetonide) titanium, and propane dioxy titanium bis (ethyl acetonitrile) Chelate titanium; (iii) iC 3 H 7 O-[-Ti(OiC 3 H 7 ) 2 -O-] n -iC 3 H 7 , and nC 4 H 9 O-[-Ti( OnC 4 H 9 ) 2 -O-] n -nC 4 H 9 such as titanium polymer; (iv) tri-n-butoxy titanium monostearate, titanium stearate, di-i-propoxy Titanium diisostearate, and titanium dichloride of (2-n-butoxycarbonylbenzylideneoxy) tributoxide, etc.; (v) di-n-butoxy bis (three) Ethanolamine) a water-soluble titanium compound such as titanium.

其中,作為含有Ti-O鍵結的化合物係二-n-丁氧基‧雙(三乙醇胺酮)鈦(Ti(OC4H9)2[OC2H4N(C2H4OH)2]2)為理想。 Among them, as a compound containing a Ti-O bond, it is a di-n-butoxy bis (triethanolamine ketone) titanium (Ti(OC 4 H 9 ) 2 [OC 2 H 4 N(C 2 H 4 OH) 2 ] 2 ) is ideal.

上述的分離層4係含有具有紅外線吸收性之構造的化合物,但分離層4係更進一步,可含有上述化合物以外之成分。作為該成分係可舉出填料、可塑劑及可提高支撐板2之剝離性的成分等。此等之成分係由不妨礙或促進依上述構造的紅外線之吸收、以及化合物之變質的先前一般周知之物質或材料中可適宜地選擇。 The separation layer 4 described above contains a compound having a structure having infrared absorbing properties, but the separation layer 4 is further contained, and may contain components other than the above compounds. Examples of the component include a filler, a plasticizer, and a component which can improve the peelability of the support plate 2. These components are suitably selected from those generally known in the art or materials which do not hinder or promote the absorption of infrared rays according to the above structure and the deterioration of the compound.

(紅外線吸收物質) (infrared absorbing material)

分離層4係亦可含有紅外線吸收物質。藉由分離層4係以含有紅外線吸收物質而構成,以吸收光而產生變質,作為其結果,失去接受光之照射前之強度或接著性。因而,藉由施加稍微的外力(例如,抬高支撐板2等),可 破壞分離層4,可輕易地分離支撐板2與基板1。 The separation layer 4 may also contain an infrared absorbing material. The separation layer 4 is composed of an infrared absorbing material, and absorbs light to cause deterioration. As a result, the strength or adhesion before the irradiation of the received light is lost. Thus, by applying a slight external force (for example, raising the support plate 2, etc.) The support layer 2 and the substrate 1 can be easily separated by breaking the separation layer 4.

紅外線吸收物質係藉由吸收紅外線而變質的構成即可,例如可合適地使用碳黑、鐵粒子、或鋁粒子。紅外線吸收物質係依該種類而吸收具備固有之範圍之波長的光。藉由將使用在分離層4的紅外線吸收物質吸收的範圍之波長之光照射於分離層4,可使紅外線吸收物質合適地變質。 The infrared absorbing material may be formed by absorbing infrared rays, and for example, carbon black, iron particles, or aluminum particles may be suitably used. The infrared absorbing material absorbs light having a wavelength within a specific range depending on the type. By irradiating the separation layer 4 with light having a wavelength in a range in which the infrared absorbing material of the separation layer 4 is absorbed, the infrared absorbing material can be appropriately deteriorated.

(反應性聚倍半矽氧烷) (reactive polysesquioxane)

分離層4係可藉由使反應性聚倍半矽氧烷聚合而形成,由此,分離層4係具備高的耐藥品性及高耐熱性。 The separation layer 4 can be formed by polymerizing a reactive polysesquioxane, whereby the separation layer 4 has high chemical resistance and high heat resistance.

在本說明書中,所謂反應性聚倍半矽氧烷係於聚倍半矽氧烷骨架之末端具有矽醇基、或藉由水解而可形成矽醇基的官能基的聚倍半矽氧烷,藉由縮合該矽醇基或可形成矽醇基的官能基,可互相聚合者。另外,反應性聚倍半矽氧烷係如具備矽醇基、或可形成矽醇基的官能基,則可採用具備隨機結構、籠型結構、梯形結構等之倍半矽氧烷骨架者。 In the present specification, the reactive polysesquioxane is a polysilsesquioxane having a sterol group at the end of the polysilsesquioxane skeleton or a functional group capable of forming a sterol group by hydrolysis. By condensing the sterol group or a functional group capable of forming a decyl group, it is possible to polymerize with each other. Further, when the reactive polysesquioxane is a functional group having a sterol group or a sterol group, a sesquiterpene skeleton having a random structure, a cage structure, a trapezoidal structure or the like can be used.

另外,反應性聚倍半矽氧烷係具有下述式(12)所示的構造為較理想。 Further, the reactive polysesquioxane having a structure represented by the following formula (12) is preferred.

在式(12)中,R”係各自獨立地,由氫及碳數1以上、10以下之烷基所構成的群中選擇,由氫及碳數1以上、5以下之烷基所構成的群中選擇為較理想。R”如為氫或碳數1以上、10以下之烷基,則藉由在分離層形成步驟的加熱,可使藉由式(12)所示的反應性聚倍半矽氧烷合適地縮合。 In the formula (12), R" is independently selected from the group consisting of hydrogen and an alkyl group having 1 or more carbon atoms and 10 or less alkyl groups, and is composed of hydrogen and an alkyl group having 1 or more carbon atoms and 5 or less carbon atoms. It is preferable to select a group. If R is hydrogen or an alkyl group having a carbon number of 1 or more and 10 or less, the reactive polycondensation represented by the formula (12) can be obtained by heating in the separation layer forming step. The hemidecane is suitably condensed.

式(12)中,p係1以上、100以下之整數為理想,1以上、50以下之整數為較理想。反應性聚倍半矽氧烷係藉由具備以式(12)所示的重複單位,比使用其他之材料而形成,Si-O鍵結之含量更高,可形成在紅外線(0.78μm以上、1000μm以下),理想為遠紅外線(3μm以上、1000μm以下),更理想為波長9μm以上、11μm以下的吸光度高的分離層4。 In the formula (12), an integer of 1 or more and 100 or less in p is preferable, and an integer of 1 or more and 50 or less is preferable. The reactive polysesquioxane is formed by using a repeating unit represented by the formula (12), and is formed by using other materials, and has a higher content of Si-O bonds, and can be formed in infrared rays (0.78 μm or more, 1000 μm or less) is preferably a far infrared ray (3 μm or more and 1000 μm or less), and more preferably a separation layer 4 having a high absorbance of a wavelength of 9 μm or more and 11 μm or less.

另外,式(12)中,R’係各自獨立,相互相同、或相異的有機基。在此,R係例如為芳基、烷基及烯基等,此等之有機基係亦可具有取代基。 Further, in the formula (12), R' is an organic group which is independent of each other, or which is the same or different from each other. Here, R is, for example, an aryl group, an alkyl group, an alkenyl group or the like, and these organic groups may have a substituent.

在R’為芳基的情況,可舉出苯基、萘基、蒽基、菲基等,苯基為較理想。另外,芳基係亦可經由碳數1~5之伸烷基而鍵結於聚倍半矽氧烷骨架。 When R' is an aryl group, a phenyl group, a naphthyl group, an anthracenyl group, a phenanthryl group or the like is exemplified, and a phenyl group is preferred. Further, the aryl group may be bonded to the polysilsesquioxane skeleton via an alkylene group having 1 to 5 carbon atoms.

在R’為烷基的情況,作為烷基係可舉出直鏈狀、支鏈狀或環狀之烷基。另外,在R為烷基的情況,碳數係1~15為理想,1~6為較理想。另外,在R為環狀之烷基的情況,亦可為作為單環狀或二~四環狀之構造的烷基。 When R' is an alkyl group, the alkyl group may be a linear, branched or cyclic alkyl group. Further, when R is an alkyl group, the carbon number is preferably from 1 to 15, and preferably from 1 to 6. Further, in the case where R is a cyclic alkyl group, it may be an alkyl group having a monocyclic or two to four cyclic structure.

在R’為烯基的情況,與在烷基的情況相同,可舉出直鏈狀、支鏈狀、或環狀之烯基,烯基係碳數為2~15為理想,2~6為較理想。另外,在R為環狀之烯基的情況,亦可為作為單環狀或二~四環狀之構造的烯基。作為烯基,例如可舉出乙烯基、及烯丙基等。 When R' is an alkenyl group, as in the case of an alkyl group, a linear, branched or cyclic alkenyl group may be mentioned, and an alkenyl group having a carbon number of 2 to 15 is desirable, and 2 to 6 is preferable. It is ideal. Further, in the case where R is a cyclic alkenyl group, it may be an alkenyl group having a monocyclic or two to four cyclic structure. Examples of the alkenyl group include a vinyl group and an allyl group.

另外,作為R’可具有的取代基係可舉出氫氧基及烷氧基等。在取代基為烷氧基的情況,可舉出直鏈狀、支鏈狀、或環狀之烷基烷氧基,在烷氧基的碳數為1~15為理想,1~10為較理想。 Further, examples of the substituent which R' may have include a hydroxyl group and an alkoxy group. When the substituent is an alkoxy group, a linear, branched or cyclic alkyl alkoxy group may be mentioned, and the alkoxy group has a carbon number of from 1 to 15 and preferably from 1 to 10. ideal.

另外,在一個觀點中,反應性聚倍半矽氧烷之矽氧烷含量係70mole%以上、99mole%以下為理想,80mole%以上、99mole%以下為較理想。如反應性聚倍半矽氧烷之矽氧烷含量係70mole%以上、99mole%以下,則可形成藉由照射紅外線(理想為遠紅外線,更理想為波長9μm以上、11μm以下之光)而可合適地變質的分離層。 Further, in one aspect, the content of the oxonane of the reactive polysesquioxane is preferably 70 mole% or more and 99 mole% or less, and preferably 80 mole% or more and 99 mole% or less. When the content of the oxonane of the reactive polysesquioxanes is 70 mole% or more and 99 mole% or less, it is possible to form infrared rays (preferably, far infrared rays, more preferably light having a wavelength of 9 μm or more and 11 μm or less). A suitably degraded separation layer.

另外,在一個觀點中,反應性聚倍半矽氧烷之重量平均分子量(Mw)係500以上、50,000以下為理想,1,000以上、10,000以下為較理想。如反應性聚倍半 矽氧烷之重量平均分子量(Mw)係500以上、50,000以下,則可合適地溶解於溶劑,可合適地塗佈於支撐板上。 Further, in one aspect, the weight average molecular weight (Mw) of the reactive polysesquioxane is preferably 500 or more and 50,000 or less, and more preferably 1,000 or more and 10,000 or less. Reactive poly half When the weight average molecular weight (Mw) of the decane is 500 or more and 50,000 or less, it can be suitably dissolved in a solvent, and can be suitably applied to a support plate.

作為反應性聚倍半矽氧烷可使用的市售品係例如可舉出小西化學工業公司製之SR-13、SR-21、SR-23及SR-33等。 Commercially available products which can be used as the reactive polysesquioxane include, for example, SR-13, SR-21, SR-23, and SR-33 manufactured by Kosei Chemical Industry Co., Ltd.

〔其他〕 〔other〕

在有關本實施形態的支撐體分離方法係作為其他之構成,可使用具備了切割框6的切割膠帶5。 In the support separation method according to the present embodiment, as the other configuration, the dicing tape 5 including the dicing frame 6 can be used.

(切割膠帶5) (Cutting Tape 5)

於層積體10之基板1側係黏附切割膠帶5。切割膠帶5係藉由切割剝離了支撐板2後之基板1,為了製造半導體晶片而使用。 The dicing tape 5 is adhered to the side of the substrate 1 of the laminate 10. The dicing tape 5 is used by manufacturing the semiconductor wafer by cutting the substrate 1 from which the support plate 2 has been peeled off.

作為切割膠帶5係例如可使用於基膜形成黏著層的構成之切割膠帶5。作為基膜係例如可使用PVC(聚氯乙烯)、聚烯烴或聚丙烯等之樹脂薄膜。切割膠帶5之外徑係大於基板1之外徑,若黏附此等則於基板1之外緣部分,切割膠帶5之一部分成為露出的狀態。 As the dicing tape 5, for example, a dicing tape 5 having a structure in which an adhesive layer is formed on a base film can be used. As the base film, for example, a resin film of PVC (polyvinyl chloride), polyolefin, or polypropylene can be used. The outer diameter of the dicing tape 5 is larger than the outer diameter of the substrate 1, and if it adheres to the outer edge portion of the substrate 1, a part of the dicing tape 5 is exposed.

(切割框6) (Cutting Box 6)

在切割膠帶5之露出面之更外周係安裝用以防止切割膠帶5之撓曲的切割框6。作為切割框6係例如可舉出鋁等之金屬製之切割框、不鏽鋼(SUS)等之合金製之切割 框、以及樹脂製之切割框。 A cutting frame 6 for preventing deflection of the dicing tape 5 is attached to the outer periphery of the exposed surface of the dicing tape 5. The cutting frame 6 is, for example, a cutting frame made of metal such as aluminum or an alloy made of stainless steel (SUS). Frame, and resin cutting frame.

<有關變形例的支撐體分離方法> <Support separation method for a modification example>

有關本發明的支撐體分離方法係不限定於上述實施形態。例如,在有關一變形例的支撐體分離方法係如第3圖之(b)所示,在層積體10,包圍電路形成區域之全周,占有在半徑方向的寬W’1之範圍的非電路形成區域之中,占有寬W’2之範圍的特定區域為對於在基板1的電路形成區域為未分離的構成。關於本變形例的支撐體分離方法係例如在寬W’1之值為小於2mm的情況,將在雷射光L照射的分離層4的分割區域之寬W’2可容易地確保於1.3mm左右以上之重點為有效。 The support separation method according to the present invention is not limited to the above embodiment. For example, in the support separation method according to a modification, as shown in FIG. 3(b), the laminated body 10 covers the entire circumference of the circuit formation region and occupies the width W'1 in the radial direction. Among the non-circuit formation regions, the specific region occupying the range of the width W'2 is a configuration in which the circuit formation region on the substrate 1 is not separated. In the support separation method of the present modification, for example, when the value of the width W'1 is less than 2 mm, the width W'2 of the divided region of the separation layer 4 irradiated with the laser light L can be easily secured to about 1.3 mm. The above points are valid.

因為藉由上述之構成,亦可防止對於基板1之電路形成區域直接地照射雷射光L,所以可防止形成於基板1的積體電路為因雷射光L而受到損傷。 According to the configuration described above, it is possible to prevent the laser light L from being directly irradiated to the circuit formation region of the substrate 1. Therefore, it is possible to prevent the integrated circuit formed on the substrate 1 from being damaged by the laser light L.

另外,在有關其他之變形例的支撐體分離方法係如第3圖之(c)所示,包圍電路形成區域之全周,在特定區域之半徑方向的寬W”2之範圍係占有非電路形成區域之寬之未達100%之範圍。 Further, in the support separation method according to another modification, as shown in FIG. 3(c), the entire circumference of the circuit formation region is surrounded by the non-circuit in the range of the width W"2 in the radial direction of the specific region. The width of the formation area is less than 100%.

因為藉由上述之構成,亦可防止雷射光L照射於基板1之外周端部更外側,可防止雷射光L照射在基板1的電路形成區域。本變形例係例如在基板1的非電路形成區域之寬為1.3mm左右的情況,在可確保於分離層4的照射雷射光L的區域之點上為有效。 According to the configuration described above, it is possible to prevent the laser light L from being irradiated to the outside of the outer peripheral end portion of the substrate 1, and to prevent the laser light L from being irradiated onto the circuit formation region of the substrate 1. In the present modification, for example, when the width of the non-circuit forming region of the substrate 1 is about 1.3 mm, it is effective at a point where the region of the separation layer 4 that irradiates the laser light L can be secured.

<有關第2之實施形態的支撐體分離方法> <Support separation method according to the second embodiment>

有關本發明的支撐體分離方法係不限定於上述之實施形態。例如,在有關一實施形態(第2之實施形態)的支撐體分離方法係在光照射步驟前,更包含檢測層積體10之方向的檢測步驟,在分離步驟,根據以檢測步驟檢測的層積體10之方向,為了施加力於層積體10而具備保持支撐板(支撐體)2的吸附墊的分離板(保持部,不圖示)為以配置於照射雷射光L的分割區域4C-1~4C-6之上的方式,使層積體10旋動的構成。在此,分離板係保持支撐板2時,在該支撐板2之周緣部分具備以等間隔配置的4個吸附墊。 The support separation method according to the present invention is not limited to the above embodiment. For example, in the support separation method according to an embodiment (the second embodiment), before the light irradiation step, a detection step of detecting the direction of the laminate 10 is further included, and in the separation step, the layer detected by the detection step is used. In the direction of the integrated body 10, a separating plate (holding portion, not shown) for holding the adsorption pad of the support plate (support) 2 for applying the force to the laminated body 10 is disposed in the divided region 4C where the laser beam L is irradiated. A configuration in which the laminated body 10 is rotated in a manner of -1 to 4C-6. Here, when the separation plate holds the support plate 2, four adsorption pads arranged at equal intervals are provided on the peripheral portion of the support plate 2.

如藉由上述之構成,則即使不照射雷射光L於分離層4的區域4C之全域,亦在檢測步驟根據特定的層積體10之方向,在層積體10,僅在符合分離板之吸附墊所配置的位置的分割區域進行光照射階段就足夠。因而,可更縮短於分離層4照射雷射光L的時間,可更迅速地由層積體10分離支撐板2。尚,關於有關本實施形態的支撐體分離方法係僅說明與有關第1之實施形態的支撐體分離方法之相異點,關於一致點係省略該說明。 According to the above configuration, even if the laser light L is not irradiated to the entire region 4C of the separation layer 4, the detection step is based on the direction of the specific laminate 10, and the laminate 10 is only in conformity with the separation plate. It is sufficient that the divided region of the position at which the adsorption pad is disposed is subjected to the light irradiation phase. Therefore, the time during which the separation layer 4 irradiates the laser light L can be shortened, and the support plate 2 can be separated more quickly by the laminate 10. In the support separation method according to the present embodiment, only the difference from the support separation method according to the first embodiment will be described, and the description will be omitted for the same point.

〔檢測步驟〕 [detection step]

在檢測步驟係在進行光照射步驟前,藉由檢測設置於支撐板2的缺口部(缺口,不圖示)的光學對準裝置(不 圖示),將該缺口部作為基準,特定層積體10之方向。由此,在之後之光照射步驟,可以可特定在分離層4的任一之分割區域是否已照射光之方式進行。 In the detecting step, an optical alignment device (not shown) provided in the notch portion (not shown) of the support plate 2 is detected before the light irradiation step is performed (not As shown in the figure, the direction of the layered body 10 is specified by using the notch portion as a reference. Thereby, in the subsequent light irradiation step, it is possible to specify whether or not any of the divided regions of the separation layer 4 has been irradiated with light.

在檢測步驟係例如於第2圖之(b)所示,在單點鏈線C1之位置,以配置在支撐板2的缺口部之方式,設定光照射步驟前之層積體10之方向即可。 In the detection step, for example, as shown in FIG. 2(b), the direction of the laminated body 10 before the light irradiation step is set so as to be disposed at the notch portion of the support plate 2 at the position of the single-dot chain line C1. can.

〔光照射步驟〕 [Light irradiation step]

如第2圖之(b)所示,在有關本實施形態的支撐體分離方法所包含光照射步驟係在檢測步驟後,藉由重複光照射階段與旋動階段,使藉由單點鏈線C1~C10而分割的分割區域4C-1~4C-6的分離層4變質。藉由此,以在分離層4之周緣部分而以等間隔分離之方式,使分為合計4處所而配置的分割區域4C-1~4C-6之分離層4變質。 As shown in FIG. 2(b), the light irradiation step included in the support separation method according to the present embodiment is performed by repeating the light irradiation step and the swirling step by the single-point chain line after the detection step. The separation layer 4 of the divided regions 4C-1 to 4C-6 divided by C1 to C10 is deteriorated. By this, the separation layer 4 of the divided regions 4C-1 to 4C-6 arranged in a total of four places is degraded so as to be separated at equal intervals in the peripheral portion of the separation layer 4.

(分離步驟) (separation step)

在分離步驟係首先,根據以檢測步驟檢測的層積體10之方向,在保持支撐板2的分離板的4個之吸附墊,以配置於照射雷射光L的分割區域4C-1~4C-6之上的方式,使上述層積體10旋動。之後,藉由各吸附墊,保持位於分割區域4C-1~4C-6之上的支撐板2,進行抬高。由此,可在分割區域4C-1~4C-6已變質的分離層4使來自分離板所施加的力集中。因此,可在分割區域4C-1~4C-6已變質的分離層4被破壞後,對於在未被照射雷射光L的區 域的分離層4使力集中。由此,可由層積體10合適地分離支撐板2。 In the separation step, first, the four adsorption pads of the separation plate of the support plate 2 are held in accordance with the direction of the laminate 10 detected by the detection step, and are disposed in the divided regions 4C-1 to 4C of the irradiation laser light L. The above method of 6 causes the above laminated body 10 to be rotated. Thereafter, the support plates 2 located above the divided regions 4C-1 to 4C-6 are held by the respective adsorption pads, and raised. Thereby, the force applied from the separation plate can be concentrated in the separation layer 4 in which the divided regions 4C-1 to 4C-6 have been deteriorated. Therefore, after the separation layer 4 which has been deteriorated in the divided regions 4C-1 to 4C-6 is destroyed, for the region where the laser light L is not irradiated The separation layer 4 of the domain concentrates the forces. Thereby, the support plate 2 can be appropriately separated by the laminated body 10.

<有關其他實施形態的支撐體分離方法> <Support separation method according to other embodiments>

有關本發明的支撐體分離方法係不限定於上述實施形態(第1之實施形態及第2之實施形態)。例如,在有關其他實施形態的支撐體分離方法係支撐板(支撐體)及分離層之材料為可依照層積體所要求的性能而適宜地選擇。因此,發射照射於分離層的光的雷射係不限定於CO2雷射,將YAG雷射、紅寶石雷射、玻璃雷射、YVO4雷射、LD雷射、光纖雷射等之固體雷射,色素雷射等之液體雷射,CO2雷射、準分子雷射、Ar雷射、He-Ne雷射等之氣體雷射、半導體雷射、自由電子雷射等之雷射光、或是非雷射光等,依照可使構成分離層4的材料變質的波長而適宜地選擇使用即可。 The support separation method according to the present invention is not limited to the above embodiment (the first embodiment and the second embodiment). For example, in the support separation method according to another embodiment, the support plate (support) and the material of the separation layer are appropriately selected in accordance with the performance required for the laminate. Therefore, the laser system that emits light that illuminates the separation layer is not limited to a CO 2 laser, and a solid ray such as a YAG laser, a ruby laser, a glass laser, a YVO 4 laser, an LD laser, or a fiber laser is used. Laser lasers such as liquid lasers, pigment lasers, laser beams such as CO 2 lasers, excimer lasers, Ar lasers, He-Ne lasers, semiconductor lasers, free electron lasers, etc., or The non-laser light or the like may be appropriately selected and used according to the wavelength at which the material constituting the separation layer 4 can be deteriorated.

另外,在有關更其他之本實施形態的支撐體分離方法係保持在層積體10的支撐板2的保持部係例如具備把持支撐板2之外周端部的複數之夾具(爪部,不圖示)的分離板亦可。 In addition, in the support body separation method of the present embodiment, the holding portion of the support plate 2 of the laminate 10 is provided with, for example, a plurality of jigs (claw portions, not shown) that grip the outer peripheral end portions of the support plate 2. The separator plate shown) can also be used.

另外,在有關更其他之實施形態的支撐體分離方法係在光照射步驟,應照射光的分割區域之數及配置係依照保持部具有的吸附墊之數或配置,亦可適宜地變更設計。 Further, in the support separation method according to still another embodiment, in the light irradiation step, the number and arrangement of the divided regions to be irradiated with light may be appropriately changed depending on the number or arrangement of the adsorption pads of the holding portion.

本發明係不限定於上述的各實施形態,在請 求項所示的範圍可為各式各樣之變更,關於適宜地組合各自開示於不同的實施形態的技術上的手段而得到的實施形態亦包含於本發明之技術上的範圍。 The present invention is not limited to the above embodiments, and is The range shown in the above-mentioned items can be variously changed, and the embodiments obtained by appropriately combining the technical means each of which is shown in different embodiments are also included in the technical scope of the present invention.

〔產業上之可利用性〕 [Industrial Applicability]

有關本發明的支撐體分離方法係在微細化的半導體裝置之製造步驟可合適地利用。 The support separation method according to the present invention can be suitably utilized in the production steps of the miniaturized semiconductor device.

1‧‧‧基板 1‧‧‧Substrate

2‧‧‧支撐板(支撐體) 2‧‧‧Support plate (support)

3‧‧‧接著層 3‧‧‧Next layer

4‧‧‧分離層 4‧‧‧Separation layer

5‧‧‧切割膠帶 5‧‧‧Cut Tape

6‧‧‧切割框 6‧‧‧cut box

10‧‧‧層積體 10‧‧‧Layer

50‧‧‧雷射照射裝置 50‧‧‧Laser illumination device

Claims (10)

一種支撐體分離方法,其係由將基板、與透過光的支撐體,隔著接著層、與藉由吸收光而變質的分離層進行層積而得的層積體,分離上述支撐體的支撐體分離方法,其特徵為上述基板係具有形成電路的電路形成區域、與包圍該電路形成區域之全周之未形成上述電路的非電路形成區域;且該方法具有以下步驟:隔著上述支撐體,對以對向於上述基板中包圍上述電路形成區域之全周且相對於占有上述非電路形成區域之半徑方向的寬之65%以上、未達100%之區域的特定區域之方式所層積而得的分離層之至少一部分,照射光的光照射步驟、與對照射上述光的層積體施加力,由該層積體分離上述支撐體的分離步驟。 A method for separating a support body by laminating a substrate and a support for transmitting light through a laminate layer and a separation layer which is deteriorated by absorbing light, and separating the support of the support body The body separation method is characterized in that the substrate has a circuit formation region forming a circuit and a non-circuit formation region in which the circuit is not formed over the entire circumference of the circuit formation region; and the method has the following steps: interposing the support And stratified by a specific region that is opposite to the entire circumference of the circuit formation region of the substrate and that is 65% or more and less than 100% of the width in the radial direction of the non-circuit formation region. At least a part of the obtained separation layer, a light irradiation step of irradiating light, and a separation step of separating the support from the laminate by applying a force to the laminate that irradiates the light. 如請求項1之支撐體分離方法,其中,上述特定區域之內周端部、與上述電路形成區域之外周端部係分離,且,上述特定區域之外周端部、與上述基板之外周端部係分離。 The support body separation method according to claim 1, wherein the inner peripheral end portion of the specific region is separated from the outer peripheral end portion of the circuit formation region, and the outer peripheral end portion of the specific region and the outer peripheral end portion of the substrate Separation. 如請求項1或2之支撐體分離方法,其中,在上述非電路形成區域之半徑方向的寬係在大於1.3mm、2.0mm以下之範圍內,且在上述特定區域之半徑方向的寬係1.3mm以上、未達2.0mm。 The support separation method according to claim 1 or 2, wherein the width in the radial direction of the non-circuit formation region is in a range of more than 1.3 mm and 2.0 mm or less, and the width in the radial direction of the specific region is 1.3. Above mm, less than 2.0mm. 如請求項1之支撐體分離方法,其中,上述光照射 步驟係包含一種光照射階段,其係對以對向於將上述層積體之平面之中心作為中心點且使上述特定區域以特定之角度進行等分割的分割特定區域之方式所層積而得的上述分離層之至少一部分照射光、與一種旋動階段,其係將上述層積體之平面之中心作為中心點,使上述層積體之平面在上述特定之角度旋動。 The method for separating a support according to claim 1, wherein the light irradiation is performed The step includes a light irradiation stage which is formed by laminating a plurality of divided specific regions which are opposite to the center of the plane of the laminate and which divides the specific region at a specific angle. At least a portion of the separation layer is irradiated with light, and a swirling phase is formed by centering the center of the plane of the laminate, and the plane of the laminate is rotated at the specific angle. 如請求項4之支撐體分離方法,其中,於上述光照射步驟前,更包含檢測上述層積體之方向的檢測步驟,在上述分離步驟,根據以上述檢測步驟檢測的上述層積體之方向,為了對上述層積體施加力而保持上述支撐體的保持部為以配置於上述被照射光的分割特定區域之上之方式,使上述層積體旋動。 The method for separating a support according to claim 4, further comprising, before the step of irradiating the light, a detecting step of detecting a direction of the laminate, wherein the separating step is based on a direction of the laminate detected by the detecting step In order to apply a force to the laminate, the holding portion of the support is held so as to be placed on the divided specific region of the light to be irradiated, and the laminate is rotated. 如請求項4或5之支撐體分離方法,其中,在上述分離步驟前,交互地重複上述光照射階段、與上述旋動階段,對以對向於全部之上述分割特定區域之方式所層積而得的上述分離層照射光。 The support separation method according to claim 4 or 5, wherein, before the separating step, the light irradiation phase and the above-described rotation phase are alternately repeated, and the layers are stacked in such a manner as to face all of the division specific regions. The resulting separation layer is irradiated with light. 如請求項4之支撐體分離方法,其中,對以對向於上述分割特定區域之方式所層積而得的上述分離層之50%以上之面積照射光。 The support separation method according to claim 4, wherein the light is irradiated to an area of 50% or more of the separation layer which is laminated so as to be opposed to the division-specific region. 如請求項1之支撐體分離方法,其中,上述光之照射圖型為線形、圓點形、環形、多角點形、多角環形或螺旋形之任一者。 The support separation method according to claim 1, wherein the illumination pattern of the light is a linear shape, a dot shape, a circular shape, a polygonal shape, a polygonal shape, or a spiral shape. 如請求項1之支撐體分離方法,其中,上述支撐體係由矽所構成, 上述光係碳酸雷射。 The method for separating a support according to claim 1, wherein the support system is composed of a crucible, The above-mentioned light system is a carbonic acid laser. 如請求項1之支撐體分離方法,其中,在上述層積體的基板側係貼附切割膠帶,該切割膠帶之一部分係露出於上述基板之外緣部分。 The method of separating a support according to claim 1, wherein a dicing tape is attached to the substrate side of the laminate, and a part of the dicing tape is exposed at an outer edge portion of the substrate.
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