TW201507861A - Method for producing laminate and laminate - Google Patents

Method for producing laminate and laminate Download PDF

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Publication number
TW201507861A
TW201507861A TW103123485A TW103123485A TW201507861A TW 201507861 A TW201507861 A TW 201507861A TW 103123485 A TW103123485 A TW 103123485A TW 103123485 A TW103123485 A TW 103123485A TW 201507861 A TW201507861 A TW 201507861A
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separation layer
laminate
substrate
support plate
support
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TW103123485A
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Chinese (zh)
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Atsushi Matsushita
Tatsuhiro Mitake
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Tokyo Ohka Kogyo Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Laminated Bodies (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

A method for producing a laminate (21) which is provided with a substrate (11), a light-transmitting support plate (12) that supports the substrate (11), and a first separation layer (15) that is arranged between the substrate (11) and the support plate (12) and is altered in properties by means of absorption of light that is irradiated thereon through the support plate (12). The first separation layer (15) is formed by plasma processing using a reaction gas that contains a fluorine compound and an organic compound having an unsaturated bond.

Description

層合體的製造方法及層合體 Method for manufacturing laminate and laminate

本發明係關於使基板與支撐体層合而成之層合體的製造方法及層合體。 The present invention relates to a method for producing a laminate in which a substrate and a support are laminated, and a laminate.

伴隨著行動電話、數位AV設備以及IC卡等之高功能性化,由於所搭載之半導體矽晶片(以下稱為晶片)之小型化及薄型化,而對在封裝內使矽高積體化之要求增高。例如以CSP(晶片尺寸封裝)或MCP(多晶片封裝)為代表之所單封裝化複數晶片之積體電路中,被要求薄型化。為了實現封裝內之晶片高積體化,晶片厚度有必要削薄至25~150μm之範圍內。 With the high functionality of mobile phones, digital AV devices, and IC cards, the semiconductor wafers (hereinafter referred to as wafers) mounted are miniaturized and thinned, and they are integrated into the package. The demand is increasing. For example, in an integrated circuit in which a single packaged complex wafer represented by CSP (Chip Size Package) or MCP (Multi Chip Package) is required, it is required to be thinned. In order to achieve high integration of the wafer in the package, the thickness of the wafer needs to be thinned to a range of 25 to 150 μm.

然而,成為晶片基底之半導體晶圓(以下稱為晶圓)係由於藉由研削而薄片化,故其強度變弱,使晶圓容易產生龜裂或翹曲。另外,由於利用薄片化而難以自動搬送已強度變弱的晶圓,故必須藉由人工搬送,其操作繁瑣。 However, since the semiconductor wafer (hereinafter referred to as a wafer) to be a wafer substrate is thinned by grinding, the strength thereof is weak, and the wafer is likely to be cracked or warped. Further, since it is difficult to automatically transfer a wafer having a weakened strength by flaking, it is necessary to carry out manual transfer, which is cumbersome to operate.

因此,開發出將稱為支撐板之由玻璃或硬質 塑膠等所構成之板貼合於欲研削之晶圓上而保持晶圓強度,而防止龜裂發生及晶圓翹曲之晶圓操作系統(WHS)。由於利用晶圓操作系統可維持晶圓強度,故可自動化已薄片化之半導體晶圓之搬送。 Therefore, the development of a glass or hard will be called a support plate A wafer operating system (WHS) in which a board made of plastic is bonded to a wafer to be ground to maintain wafer strength while preventing cracking and wafer warpage. Since the wafer strength can be maintained by the wafer operating system, the transport of the thinned semiconductor wafer can be automated.

將支撐體貼合於半導體晶圓上,處理半導體晶圓後,如作為分離支撐體般之半導體晶片之製造方法,已知有如記載在專利文獻1之方法。專利文獻1所記載之方法中,係將光透過性之支撐體與半導體晶圓透過設置於支撐體側之光熱轉換層與接著層而貼合,處理半導體晶圓後,藉由自支撐體側照射輻射能,來分解光熱轉換層,自支撐體來分離半導體晶圓。 A method of manufacturing a semiconductor wafer as a separation support after bonding a support to a semiconductor wafer and processing the semiconductor wafer is known as the method described in Patent Document 1. In the method described in Patent Document 1, the light-transmitting support and the semiconductor wafer are bonded through the photothermal conversion layer and the adhesive layer provided on the support side, and the semiconductor wafer is processed, and the self-supporting body side is processed. The radiant energy is irradiated to decompose the photothermal conversion layer, and the semiconductor wafer is separated from the support.

又,專利文獻2中記載之方法,係藉由使用酸或鹼性溶解液溶解去除形成於支撐板之接著面上之分離層,而使支撐板與半導體晶圓分離。 Further, in the method described in Patent Document 2, the support layer is separated from the semiconductor wafer by dissolving and removing the separation layer formed on the back surface of the support plate using an acid or an alkaline solution.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本公開專利公報「特開2004-64040號公報(2004年2月26日公開)」 [Patent Document 1] Japanese Laid-Open Patent Publication No. 2004-64040 (published on February 26, 2004)

[專利文獻2]日本公開專利公報「特開2007-188967號公報(2007年7月26日公開)」 [Patent Document 2] Japanese Laid-Open Patent Publication No. 2007-188967 (published on July 26, 2007)

專利文獻2之技術中,為了於形成分離層時而使高密度電漿產生。分離層之形成時使用高密度電漿時,為了使層合之基板大型化有必要使電漿產生裝置之構造變得複雜。因此,使用高密度電漿之基板之大型化有困難。另一方面,分離層之形成中使用低密度電漿時,會有無法形成藉由吸收光而變質之分離層之問題。 In the technique of Patent Document 2, high-density plasma is generated in order to form a separation layer. When a high-density plasma is used in the formation of the separation layer, it is necessary to complicate the structure of the plasma generation apparatus in order to increase the size of the laminated substrate. Therefore, it is difficult to enlarge the substrate using the high-density plasma. On the other hand, when a low-density plasma is used for the formation of the separation layer, there is a problem that a separation layer which is deteriorated by absorbing light cannot be formed.

本發明係鑑於上述問題而完成者,其目的係提供一種具備可使層合之基板大型化之分離層之層合體。 The present invention has been made in view of the above problems, and an object thereof is to provide a laminate including a separation layer which can increase the size of a laminated substrate.

為了解決上述課題,本發明之層合體之製造方法,係具備有基板、支撐上述基板之光透過性的支撐體、以及被設置於上述基板與上述支撐體之間,並藉由吸收透過上述支撐體所照射之光而變質之第一分離層的層合體之製造方法,其特徵係包含藉由使用含有具有不飽和鍵之有機化合物與氟化合物之反應氣體進行電漿處理,而形成上述第一分離層之第一分離層形成步驟。 In order to solve the above problems, a method for producing a laminate according to the present invention includes a substrate, a support for supporting light transmittance of the substrate, and a substrate provided between the substrate and the support, and absorbing and transmitting the support A method for producing a laminate of a first separation layer which is deteriorated by light irradiated by a body, characterized in that the first step is formed by plasma treatment using a reaction gas containing an organic compound having an unsaturated bond and a fluorine compound A first separation layer forming step of the separation layer.

又,本發明之層合體係具備有基板、支撐上述基板之光透過性支撐體、以及被設置於上述基板與上述支撐體之間,並藉由吸收透過上述支撐體所照射之光而變質之第一分離層的層合體,其特徵為上述第一分離層係藉由使用含有具有不飽和鍵之有機化合物與氟化合物之反應氣體進行電漿處理而形成。 Further, the laminate system of the present invention includes a substrate, a light transmissive support that supports the substrate, and is disposed between the substrate and the support, and is deteriorated by absorbing light irradiated through the support. The laminate of the first separation layer is characterized in that the first separation layer is formed by plasma treatment using a reaction gas containing an organic compound having an unsaturated bond and a fluorine compound.

本發明係發揮可提供具備可使層合之基板大型化之分離層之層合體之效果。 The present invention has an effect of providing a laminate having a separation layer capable of increasing the size of a laminated substrate.

11‧‧‧基板 11‧‧‧Substrate

12‧‧‧支撐板(支撐體) 12‧‧‧Support plate (support)

13‧‧‧接著層 13‧‧‧Next layer

14‧‧‧第二分離層 14‧‧‧Second separation layer

15‧‧‧第一分離層 15‧‧‧First separation layer

20,21‧‧‧層合體 20,21‧‧‧Layer

100‧‧‧電漿處理裝置 100‧‧‧ Plasma processing unit

101‧‧‧反應室 101‧‧‧Reaction room

102‧‧‧平行平板電極 102‧‧‧ parallel plate electrode

103‧‧‧載台 103‧‧‧ stage

111‧‧‧儲存有機化合物之容器 111‧‧‧Containing containers for organic compounds

112‧‧‧液體主流動控制器 112‧‧‧Liquid main flow controller

113‧‧‧氣化器 113‧‧‧ gasifier

114‧‧‧氟化合物壓力罐 114‧‧‧Fluorine compound pressure tank

115‧‧‧主流動控制器 115‧‧‧Main flow controller

116,116a,116b‧‧‧配管 116,116a,116b‧‧‧Pipe

圖1係說明本發明一實施形態之製造方法之概略的示意圖。 Fig. 1 is a schematic view showing the outline of a manufacturing method according to an embodiment of the present invention.

圖2係說明本發明一實施形態之製造方法所包含之第一分離層製造步驟之示意圖。 Fig. 2 is a schematic view showing the steps of manufacturing the first separation layer included in the production method according to the embodiment of the present invention.

圖3係說明本發明一實施形態之層合體之概略的示意圖。 Fig. 3 is a schematic view showing the outline of a laminate according to an embodiment of the present invention.

圖4係說明本發明另一實施形態之層合體之概略的示意圖。 Fig. 4 is a schematic view showing the outline of a laminate according to another embodiment of the present invention.

〈層合體之製造方法〉 <Method of Manufacturing Laminated Body>

本發明之層合體之製造方法,係具備有基板、支撐上述基板之光透過性的支撐體、以及被設置於上述基板與上述支撐體之間之藉由吸收透過上述支撐體所照射之光而變質之第一分離層的層合體之製造方法,其特徵係包含藉由使用含有具有不飽和鍵之有機化合物與氟化合物之反應氣體進行電漿處理,而形成上述第一分離層之第一分離層形 成步驟。 The method for producing a laminate according to the present invention includes a substrate, a support for supporting light transmittance of the substrate, and a light provided between the substrate and the support by absorbing light irradiated through the support. A method for producing a laminate of a deteriorated first separation layer, characterized in that the first separation of the first separation layer is formed by plasma treatment using a reaction gas containing an organic compound having an unsaturated bond and a fluorine compound Layer shape Into the steps.

藉此,不僅是使用高密度電漿之情況,於使用低密度電漿之情況,均可形成藉由吸收光而變質之分離層。藉此,電漿產生裝置之大型化變容易。因此,可製造具備有可使層合之基板大型化之分離層的層合體。 Thereby, not only the case of using a high-density plasma, but also a case where a low-density plasma is used, a separation layer which is deteriorated by absorbing light can be formed. Thereby, the enlargement of the plasma generating apparatus becomes easy. Therefore, it is possible to manufacture a laminate including a separation layer which can increase the size of the laminated substrate.

又,本發明之層合體之製造方法,亦可進一步包含形成藉由吸收透過支撐體所照射之光而變質之第二分離層之第二分離層形成步驟。 Further, the method for producing a laminate according to the present invention may further comprise a second separation layer forming step of forming a second separation layer which is deteriorated by absorbing light irradiated through the support.

據此,第一分離層與第二分離層形成於支撐體上。因此,層合體可具備在各種藥品處理中之耐藥品性良好之第一分離層之優點,與藉由照射光適當變質之第二分離層之優點兩者。例如,第二分離層上有第一分離層時,可利用第一分離層防止第二分離層因藥品處理之變質。第一分離層上有第二分離層時,即使第二分離層因藥品處理而變質,仍可利用第一分離層確保作為分離層之功能。又,由於可藉由透過支撐體所照射之光來適當地變質第一分離層及第二分離層,故可自層合體容易地分離基板。 According to this, the first separation layer and the second separation layer are formed on the support. Therefore, the laminate can have both the advantages of the first separation layer having good chemical resistance in various drug treatments, and the advantages of the second separation layer which is appropriately deteriorated by irradiation light. For example, when the first separation layer is present on the second separation layer, the first separation layer can be utilized to prevent deterioration of the second separation layer due to drug treatment. When the second separation layer is present on the first separation layer, the function of the separation layer can be ensured by the first separation layer even if the second separation layer is deteriorated by the drug treatment. Further, since the first separation layer and the second separation layer can be appropriately deteriorated by the light irradiated through the support, the substrate can be easily separated from the laminate.

又,本發明之層合體之製造方法中,形成第一分離層與第二分離層時,第一分離層形成步驟與第二分離層形成步驟之順序並無限制。亦即,本發明之層合體之製造方法亦可為藉由第一分離層形成步驟於支撐體上形成第一分離層,隨後,藉由第二分離層形成步驟作為形成第二分離層之實施形態。且,亦可為藉由第二分離層形成步 驟於支撐體上形成第二分離層,隨後,藉由第一分離層形成步驟作為形成第一分離層之實施形態。 Further, in the method for producing a laminate of the present invention, when the first separation layer and the second separation layer are formed, the order of the first separation layer forming step and the second separation layer forming step is not limited. That is, the method of manufacturing the laminate of the present invention may also be that the first separation layer is formed on the support by the first separation layer forming step, and then the second separation layer forming step is performed as the second separation layer by the second separation layer forming step. form. Moreover, the step may be formed by the second separation layer A second separation layer is formed on the support, and then the first separation layer forming step is used as an embodiment for forming the first separation layer.

使用圖1~4,針對本發明之一實施形態之層合 體之製造方法加以說明。圖1係說明本實施形態之層合體20之製造方法之概略之示意圖。又,圖1所示之實施形態係形成第二分離層14後,形成第一分離層15之實施形態。 Lamination of an embodiment of the present invention using Figures 1-4 The manufacturing method of the body will be described. Fig. 1 is a schematic view showing the outline of a method for producing the laminate 20 of the present embodiment. Further, the embodiment shown in Fig. 1 is an embodiment in which the first separation layer 15 is formed after the second separation layer 14 is formed.

如圖1所示,本實施形態之層合體之製造方 法,包含於基板11上形成接著層13之接著層形成步驟(圖1之(1)~(2))、於支撐板(支撐體)12上形成第二分離層14之第二分離層形成步驟(圖1之(3)~(4))、於第二分離層形成步驟後,形成第一分離層15之第一分離層形成步驟(圖1之(4)~(5))、及透過第二分離層14、第一分離層15及接著層13貼合基板11與支撐板12之貼合步驟(圖1之(6))。 As shown in Fig. 1, the manufacturer of the laminate of the present embodiment The method includes forming an adhesive layer forming step of the adhesive layer 13 on the substrate 11 ((1) to (2) of FIG. 1), and forming a second separation layer of the second separation layer 14 on the support plate (support) 12 Step ((3) to (4) of FIG. 1), after the second separation layer forming step, forming a first separation layer forming step of the first separation layer 15 ((4) to (5) of FIG. 1), and The bonding step of the substrate 11 and the support plate 12 is bonded through the second separation layer 14, the first separation layer 15, and the subsequent layer 13 ((6) of FIG. 1).

此處,本發明一實施形態之層合體之製造方 法,係具備有基板11、支撐基板11之光透過性支撐板(支撐體)12、以及被設置於基板11及支撐板12之間,並藉由吸收透過支撐板12所照射之光而變質之第一分離層15之層合體20之製造方法,其包含使用含有具有不飽和鍵之有機化合物與氟化合物之反應氣體進行電漿處理,藉此形成第一分離層15之第一分離層形成步驟。 Here, the manufacturer of the laminate of one embodiment of the present invention The method includes a light-transmitting support plate (support) 12 having a substrate 11 and a support substrate 11, and is disposed between the substrate 11 and the support plate 12, and is deteriorated by absorbing light irradiated through the support plate 12. A method of manufacturing the laminate 20 of the first separation layer 15 comprising performing a plasma treatment using a reaction gas containing an organic compound having an unsaturated bond and a fluorine compound, thereby forming a first separation layer of the first separation layer 15 step.

[基板] [substrate]

基板11係以支撐於支撐板12之狀態,供於薄化、安裝等製程者。本實施形態中,基板11為晶圓,但本發明之層合體20所具備之基板11並不限於晶圓,可採用薄的薄膜基板、可撓基板等之任意基板。又,基板11中之接著層13側之面亦可形成電路等電子元件之微細構造。 The substrate 11 is supported by the support plate 12 and is provided for processes such as thinning and mounting. In the present embodiment, the substrate 11 is a wafer. However, the substrate 11 included in the laminate 20 of the present invention is not limited to a wafer, and any substrate such as a thin film substrate or a flexible substrate may be used. Further, the surface of the substrate 11 on the side of the adhesive layer 13 may have a fine structure of an electronic component such as a circuit.

一實施形態中,如圖1之(1)~(2)所示,基板11上形成有用以貼合支撐板12之接著層13(接著層形成步驟)。 In one embodiment, as shown in (1) to (2) of FIG. 1, an adhesive layer 13 for bonding the support plate 12 is formed on the substrate 11 (step of forming a layer).

(接著層) (following layer)

接著層13係使基板11對支撐板12及第一分離層15進行接著固定者。又,接著層13亦可為被覆基板11之表面進行保護者。 Next, the layer 13 is such that the substrate 11 is attached to the support plate 12 and the first separation layer 15 . Further, the bonding layer 13 may also protect the surface of the covering substrate 11.

接著層13之形成方法可將接著劑塗佈於基板11上,亦可將兩面塗佈有接著劑之接著膠帶貼附於基板11上。作為接著劑之塗佈方法並無特別限制,可列舉為藉由例如旋塗法、浸漬法、輥式刮刀法、刮板法、噴霧法、狹縫模嘴法進行之塗佈法等。又,於塗佈接著劑後,亦可藉加熱使乾燥。 Next, the method of forming the layer 13 may be performed by applying an adhesive to the substrate 11, or attaching an adhesive tape having both surfaces coated with an adhesive to the substrate 11. The coating method of the adhesive is not particularly limited, and examples thereof include a coating method by a spin coating method, a dipping method, a roll doctor method, a doctor blade method, a spray method, and a slit die method. Further, after applying the adhesive, it may be dried by heating.

接著層之厚度只要根據成為貼附對象之基板11及支撐板12之種類、貼附後對基板11施加之處理等適當設定即可,但較好為10~150μm之範圍內,更好為15~100μm之範圍內。 The thickness of the layer may be appropriately set according to the type of the substrate 11 and the support plate 12 to be attached, the treatment to be applied to the substrate 11 after attachment, and the like, but it is preferably in the range of 10 to 150 μm, more preferably 15 Within the range of ~100μm.

又,亦可在距基板之周端為2mm以下,較好 0.5mm以上、0.8mm以下之範圍之寬度,去除接著層13之在基板11上之周端部。去除該周端部時,接著層13之膜厚只要為例如50μm左右即可。藉此,可適當抑制層合體形成步驟中,接著層13自層合體20滲出。 Moreover, it may be 2 mm or less from the peripheral end of the substrate, preferably The width of the range of 0.5 mm or more and 0.8 mm or less removes the peripheral end portion of the adhesive layer 13 on the substrate 11. When the peripheral end portion is removed, the film thickness of the subsequent layer 13 may be, for example, about 50 μm. Thereby, the laminate formation step can be appropriately suppressed, and the layer 13 is oozing out from the laminate 20.

至於接著劑,可使用例如丙烯酸系、酚醛清漆系、萘醌系、烴系、聚醯亞胺系、彈性體等之該領域中習知之各種接著劑作為構成本發明之接著層13之接著劑。以下,針對本實施形態中之接著層13所含有之樹脂之組成加以說明。 As the adhesive, various adhesives known in the art such as acrylic, novolak, naphthoquinone, hydrocarbon, polyimide, or elastomer can be used as an adhesive constituting the adhesive layer 13 of the present invention. . Hereinafter, the composition of the resin contained in the adhesive layer 13 in the present embodiment will be described.

作為接著層13所含有之樹脂只要具備接著性者即可,列舉為例如烴樹脂、丙烯酸系-苯乙烯系樹脂、馬來醯亞胺樹脂、彈性體樹脂等,或組合該等而成者等。 The resin contained in the adhesive layer 13 may be, for example, a hydrocarbon resin, an acrylic-styrene resin, a maleimide resin, an elastomer resin, or the like, or a combination thereof. .

接著劑之玻璃轉移溫度(Tg)係根據上述樹脂之種類或分子量、及對接著劑之可塑劑等調配物而變化。上述接著劑所含有之樹脂之種類或分子量可依據基板及支撐體之種類適當選擇,但接著劑中使用之樹脂之Tg較好為-60℃以上且200℃以下之範圍內,更好為-25℃以上且150℃以下之範圍內。藉由在-25℃以上且150℃以下之範圍內,冷卻時不需要過量能量,即可適當降低接著層13之接著力。又,接著層13之Tg亦可藉由適當調配可塑劑或低聚合度之樹脂等加以調整。 The glass transition temperature (Tg) of the subsequent agent varies depending on the type or molecular weight of the above-mentioned resin and the formulation of a plasticizer to the adhesive. The type or molecular weight of the resin contained in the above-mentioned adhesive can be appropriately selected depending on the type of the substrate and the support, but the Tg of the resin used in the adhesive is preferably in the range of -60 ° C to 200 ° C, more preferably - Within the range of 25 ° C or more and 150 ° C or less. The adhesion of the adhesive layer 13 can be appropriately reduced by not requiring excessive energy during cooling in the range of -25 ° C or more and 150 ° C or less. Further, the Tg of the subsequent layer 13 can also be adjusted by appropriately blending a plasticizer or a resin having a low degree of polymerization.

玻璃轉移溫度(Tg)可使用例如習知之示差掃描熱量測定裝置(DSC)測定。 The glass transition temperature (Tg) can be measured using, for example, a conventional differential scanning calorimetry device (DSC).

(烴樹脂) (hydrocarbon resin)

烴樹脂係具有烴骨架、使單體組成物聚合而成之樹脂。作為烴樹脂列舉為環烯烴系聚合物(以下有時稱為「樹脂(A)」),以及由萜烯樹脂、松脂系樹脂及石油樹脂所組成之群選出之至少一種樹脂(以下有時亦稱為「樹脂(B)」)等,但並不限於該等。 The hydrocarbon resin has a hydrocarbon skeleton and a resin obtained by polymerizing a monomer composition. The hydrocarbon resin is exemplified by a cycloolefin polymer (hereinafter sometimes referred to as "resin (A)"), and at least one selected from the group consisting of a terpene resin, a rosin resin, and a petroleum resin (hereinafter sometimes also It is called "resin (B)"), etc., but it is not limited to these.

至於樹脂(A)亦可為使含有環烯烴系單體之單體成分聚合而成之樹脂。具體列舉為含環烯烴系單體之單體成分之開環(共)聚合物、使含環烯烴系單體之單體成分進行加成(共)聚合而成之樹脂等。 The resin (A) may be a resin obtained by polymerizing a monomer component containing a cycloolefin monomer. Specific examples thereof include a ring-opening (co)polymer containing a monomer component of a cycloolefin monomer, and a resin obtained by subjecting a monomer component containing a cycloolefin monomer to addition (co)polymerization.

構成樹脂(A)之單體成分中所含之前述環烯烴系單體列舉為例如降冰片烯、降冰片二烯等二環體,二環戊二烯、二羥基戊二烯等三環體,四環十二碳烯等四環體,環戊二烯三聚物等之五環體、四環戊二烯等之七環體,或該等多環體之烷基(甲基、乙基、丙基、丁基等)取代物、烯基(乙烯基等)取代物、亞烷基(亞乙基等)取代物、芳基(苯基、甲苯基、萘基等)取代物等。該等中最好為由降冰片烯、四環十二碳烯、或該等之烷基取代物所組成之群選出之降冰片烯系單體。 The cycloolefin-based monomer contained in the monomer component constituting the resin (A) is, for example, a bicyclic ring such as norbornene or norbornadiene, or a tricyclic ring such as dicyclopentadiene or dihydroxypentadiene. a tetracyclic ring such as tetracyclododecene, a pentacyclic ring such as a cyclopentadiene terpolymer, a heptacyclic ring such as tetracyclopentadiene, or an alkyl group of the polycyclic ring (methyl or ethyl) Substituent, propyl, butyl, etc., substituted, alkenyl (vinyl or the like), substituted alkylene (ethylene, etc.), aryl (phenyl, tolyl, naphthyl, etc.), etc. . Preferably, the norbornene-based monomer selected from the group consisting of norbornene, tetracyclododecene, or the alkyl substituents.

構成樹脂(A)之單體成分亦可含有可與上述環烯烴系單體共聚合之其他單體,較好含有例如烯單體。烯單體列舉為例如乙烯、丙烯、1-丁烯、異丁烯、1-己烯、α-烯烴等。烯單體可為直鏈狀,亦可為分支鏈狀。 The monomer component constituting the resin (A) may further contain another monomer copolymerizable with the above cycloolefin-based monomer, and preferably contains, for example, an olefin monomer. The olefin monomer is exemplified by, for example, ethylene, propylene, 1-butene, isobutylene, 1-hexene, α-olefin, and the like. The olefin monomer may be linear or branched.

又,作為構成樹脂(A)之單體成分,就高耐 熱性(低熱分解、熱重量減少性)之觀點而言,較好含有環烯烴單體。環烯烴單體相對於構成樹脂(A)之單體成分全體之比例較好為5莫耳%以上,更好為10莫耳%以上,又更好為20莫耳%以上。另外,環烯烴單體相對於構成樹脂(A)之單體成分全體之比例並無特別限制,但就溶解性及在溶液中之經時穩定性之觀點而言,較好為80莫耳%以下,更好為70莫耳%以下。 Moreover, as a monomer component constituting the resin (A), it is highly resistant. From the viewpoint of heat (low thermal decomposition, thermal weight reduction), a cycloolefin monomer is preferred. The ratio of the cycloolefin monomer to the entire monomer component constituting the resin (A) is preferably 5 mol% or more, more preferably 10 mol% or more, and still more preferably 20 mol% or more. Further, the ratio of the cycloolefin monomer to the entire monomer component constituting the resin (A) is not particularly limited, but is preferably 80 mol% from the viewpoint of solubility and stability over time in the solution. Hereinafter, it is preferably 70 mol% or less.

又,作為構成樹脂(A)之單體成分,亦可含 有直鏈狀或分支鏈狀之烯單體。烯單體相對於構成樹脂(A)之單體成分全體之比例,就溶解性及柔軟性之觀點而言,較好為10~90莫耳%,更好為20~85莫耳%,又更好為30~80莫耳%。 Further, as a monomer component constituting the resin (A), it may be contained There are linear or branched chain olefin monomers. The ratio of the olefin monomer to the entire monomer component constituting the resin (A) is preferably from 10 to 90 mol%, more preferably from 20 to 85 mol%, from the viewpoint of solubility and flexibility. Better 30% to 80%.

又,樹脂(A)為如例如使由環烯烴系單體與烯單體所組成之單體成分聚合而成之樹脂般,不具有極性基之樹脂時,就抑制在高溫下之氣體產生而言係較佳。 In addition, when the resin (A) is a resin obtained by polymerizing a monomer component composed of a cycloolefin monomer and an olefin monomer, for example, when a resin having no polar group is used, gas generation at a high temperature is suppressed. The language is better.

使單體成分聚合時之聚合方法或聚合條件等並無特別限制,只要依照常用方法適當設定即可。 The polymerization method, polymerization conditions, and the like in the case of polymerizing the monomer component are not particularly limited, and may be appropriately set according to a usual method.

可作為樹脂(A)使用之市售品,列舉為例如Polyplastic股份有限公司製之「TOPAS」、三井化學股份有限公司製之「APEL」、日本ZEON股份有限公司製之「ZEONOR」及「ZEONEX」、JSR股份有限公司製之「ARTON」等。 Commercial products which can be used as the resin (A) are, for example, "TOPAS" manufactured by Polyplastic Co., Ltd., "APEL" manufactured by Mitsui Chemicals Co., Ltd., "ZEONOR" and "ZEONEX" manufactured by Japan ZEON Co., Ltd. "ARTON" manufactured by JSR Co., Ltd., etc.

樹脂(A)之玻璃轉移點(Tg)較好為60℃以上,最好為70℃以上。樹脂(A)之玻璃轉移點為60℃ 以上時,可進一步抑制層合體被暴露在高溫環境下時接著層之軟化。 The glass transition point (Tg) of the resin (A) is preferably 60 ° C or higher, preferably 70 ° C or higher. Resin (A) glass transfer point is 60 ° C In the above, the softening of the subsequent layer when the laminate is exposed to a high temperature environment can be further suppressed.

樹脂(B)係由萜烯系樹脂、松脂系樹脂及石油樹脂所組成之群選出之至少一種樹脂。具體而言,萜烯系樹脂列舉為例如萜烯樹脂、萜烯酚樹脂、改質萜烯樹脂、氫化萜烯樹脂、氫化萜烯酚樹脂等。松脂系樹脂列舉為例如松脂、松脂酯、氫化松脂、氫化松脂酯、聚合松酯、聚合松脂酯、改質松脂等。石油樹脂列舉為例如脂肪族或芳香族石油樹脂、氫化石油樹脂、改質石油樹脂、脂環族石油樹脂、香豆素.茚石油樹脂等。該等中以氫化萜烯樹脂、氫化石油樹脂較佳。 The resin (B) is at least one selected from the group consisting of terpene resins, rosin resins, and petroleum resins. Specifically, the terpene-based resin is exemplified by a terpene resin, a terpene phenol resin, a modified terpene resin, a hydrogenated terpene resin, a hydrogenated terpene phenol resin, and the like. The rosin-based resin is exemplified by, for example, rosin, rosin ester, hydrogenated rosin, hydrogenated rosin ester, polymerized pine ester, polymerized rosin ester, modified rosin, and the like. Petroleum resins are listed, for example, as aliphatic or aromatic petroleum resins, hydrogenated petroleum resins, modified petroleum resins, alicyclic petroleum resins, coumarins.茚 petroleum resin, etc. Among these, a hydrogenated terpene resin or a hydrogenated petroleum resin is preferred.

樹脂(B)之軟化點並無特別限制,較好為80~160℃。樹脂(B)之軟化點為80℃以上時,可抑制層合體暴露於高溫環境下時之軟化,不會出現接著不良。另一方面,樹脂(B)之軟化點為160℃以下時,成為剝離層合體時之剝離速度良好者。 The softening point of the resin (B) is not particularly limited, and is preferably from 80 to 160 °C. When the softening point of the resin (B) is 80 ° C or more, the softening of the laminate when it is exposed to a high temperature environment can be suppressed, and the subsequent defects are not caused. On the other hand, when the softening point of the resin (B) is 160 ° C or less, the peeling speed at the time of peeling the laminate is good.

樹脂(B)之重量平均分子量並無特別限制,但較好為300~3000。樹脂(B)之重量平均分子量為300以上時,成為耐熱性充分者,且高溫環境下之脫氣量變少。另一方面,樹脂(B)之重量平均分子量為3000以下時,成為剝離層合體時之剝離速度良好者。又,本實施形態之樹脂(B)之重量平均分子量意指以凝膠滲透層析法(GPC)測定之聚苯乙烯換算之分子量者。 The weight average molecular weight of the resin (B) is not particularly limited, but is preferably from 300 to 3,000. When the weight average molecular weight of the resin (B) is 300 or more, the heat resistance is sufficient, and the amount of degassing in a high temperature environment is small. On the other hand, when the weight average molecular weight of the resin (B) is 3,000 or less, the peeling speed at the time of peeling the laminate is good. Further, the weight average molecular weight of the resin (B) of the present embodiment means a molecular weight in terms of polystyrene measured by gel permeation chromatography (GPC).

又,亦可使用混合樹脂(A)與樹脂(B)而 成者作為樹脂。藉由混合,使耐熱性及剝離速度成為良好者。例如,樹脂(A)與樹脂(B)之混合比例為(A):(B)=80:20~55:45(質量比)時,由於剝離速度、高溫環境時之耐熱性、及柔軟性優異故較佳。 Further, a mixed resin (A) and a resin (B) may be used. The person is a resin. By mixing, heat resistance and peeling speed are improved. For example, when the mixing ratio of the resin (A) and the resin (B) is (A): (B) = 80: 20 to 55: 45 (mass ratio), the peeling speed, the heat resistance in a high temperature environment, and the flexibility Excellent is better.

(丙烯酸系-苯乙烯系樹脂) (acrylic-styrene resin)

作為丙烯酸系-苯乙烯系樹脂,列舉為例如使用苯乙烯或苯乙烯之衍生物與(甲基)丙烯酸酯等作為單體聚合而成之樹脂。 Examples of the acrylic-styrene-based resin include a resin obtained by polymerizing a derivative of styrene or styrene, a (meth) acrylate, or the like as a monomer.

(甲基)丙烯酸酯列舉為例如由鏈式構造所成之(甲基)丙烯酸烷酯、具有脂肪族環之(甲基)丙烯酸酯、具有芳香族環之(甲基)丙烯酸酯。由鏈式構造所成之(甲基)丙烯酸烷酯列舉為具有碳數15~20之烷基之丙烯酸系長鏈烷酯、具有碳數1~14之烷基之丙烯酸系烷酯等。丙烯酸系長鏈烷酯列舉為烷基係正十五烷基、正十六烷基、正十七烷基、正十八烷基、正十九烷基、正二十烷基等之丙烯酸或甲基丙烯酸烷酯。又,該烷基亦可為分支狀。 The (meth) acrylate is exemplified by, for example, an alkyl (meth)acrylate formed of a chain structure, a (meth) acrylate having an aliphatic ring, and a (meth) acrylate having an aromatic ring. The alkyl (meth)acrylate formed by the chain structure is exemplified by an acrylic long-chain alkyl ester having an alkyl group having 15 to 20 carbon atoms, an acrylic alkyl ester having an alkyl group having 1 to 14 carbon atoms, and the like. The acrylic long-chain alkyl ester is exemplified by an alkyl group of n-pentadecyl, n-hexadecyl, n-heptadecyl, n-octadecyl, n-nonadecyl, n-icosyl or the like. Alkyl methacrylate. Further, the alkyl group may also be branched.

具有碳數1~14之烷基之丙烯酸系烷酯,列舉為既有之丙烯酸系接著劑所用之習知丙烯酸系烷酯。列舉為例如烷基係由甲基、乙基、丙基、丁基、2-乙基己基、異辛基、異壬基、異癸基、十二烷基、月桂基、十三烷基等所成之丙烯酸或甲基丙烯酸之烷酯。 The acrylic alkyl ester having an alkyl group having 1 to 14 carbon atoms is exemplified by a conventional acrylic alkyl ester used in the conventional acrylic adhesive. For example, the alkyl group is a methyl group, an ethyl group, a propyl group, a butyl group, a 2-ethylhexyl group, an isooctyl group, an isodecyl group, an isodecyl group, a dodecyl group, a lauryl group, a tridecyl group, or the like. Alkyl ester of acrylic acid or methacrylic acid.

具有脂肪族環之(甲基)丙烯酸酯,列舉為 (甲基)丙烯酸環己酯、(甲基)丙烯酸環戊酯、(甲基)丙烯酸1-金剛烷酯、(甲基)丙烯酸降冰片酯、(甲基)丙烯酸異冰片酯、(甲基)丙烯酸三環癸酯、(甲基)丙烯酸四環十二烷酯、(甲基)丙烯酸二環戊酯等,但更好為甲基丙烯酸異冰片酯、(甲基)丙烯酸二環戊酯。 (meth) acrylate having an aliphatic ring, listed as Cyclohexyl (meth)acrylate, cyclopentyl (meth)acrylate, 1-adamantyl (meth)acrylate, norbornyl (meth)acrylate, isobornyl (meth)acrylate, (methyl) Tricyclodecyl acrylate, tetracyclododecyl (meth) acrylate, dicyclopentanyl (meth) acrylate, etc., but more preferably isobornyl methacrylate or dicyclopentanyl (meth)acrylate .

具有芳香族環之(甲基)丙烯酸酯並無特別限制,作為芳香族環,列舉為例如苯基、苄基、甲苯基、二甲苯基、聯苯基、萘基、蒽基、苯氧基甲基、苯氧基乙基等。且,芳香族環亦可具有碳數1~5之鏈狀或分支狀烷基。具體而言,以丙烯酸苯氧基乙酯較佳。 The (meth) acrylate having an aromatic ring is not particularly limited, and examples of the aromatic ring include a phenyl group, a benzyl group, a tolyl group, a xylyl group, a biphenyl group, a naphthyl group, an anthracenyl group, and a phenoxy group. Methyl, phenoxyethyl and the like. Further, the aromatic ring may have a chain or branched alkyl group having 1 to 5 carbon atoms. Specifically, phenoxyethyl acrylate is preferred.

(馬來醯亞胺系樹脂) (Malay ylide resin)

作為馬來醯亞胺系樹脂,列舉為例如使作為單體之N-甲基馬來醯亞胺、N-乙基馬來醯亞胺、N-正丙基馬來醯亞胺、N-異丙基馬來醯亞胺、N-正丁基馬來醯亞胺、N-異丁基馬來醯亞胺、N-第二丁基馬來醯亞胺、N-第三丁基馬來醯亞胺、N-正戊基馬來醯亞胺、N-正己基馬來醯亞胺、N-正庚基馬來醯亞胺、N-正辛基馬來醯亞胺、N-月桂基馬來醯亞胺、N-硬脂基馬來醯亞胺等之具有烷基之馬來醯亞胺,N-環丙基馬來醯亞胺、N-環丁基馬來醯亞胺、N-環戊基馬來醯亞胺、N-環己基馬來醯亞胺、N-環庚基馬來醯亞胺、N-環辛基馬來醯亞胺等之具有脂肪族烴基之馬來醯亞胺,N-苯基馬來醯亞胺、N-間-甲基苯基馬來醯亞胺、N- 鄰-甲基苯基馬來醯亞胺、N-對-甲基苯基馬來醯亞胺等之具有芳基之芳香族馬來醯亞胺等聚合而得之樹脂。 The maleic imine resin is exemplified by, for example, N-methyl maleimide, N-ethyl maleimide, N-n-propyl maleimide, N- as a monomer. Isopropyl maleimide, N-n-butyl maleimide, N-isobutyl maleimide, N-second butyl maleimide, N-t-butyl horse醯imine, N-n-pentylmaleimide, N-n-hexylmaleimide, N-n-heptylmaleimide, N-n-octylmaleimide, N- An alkyl-containing maleimine, N-cyclopropyl maleimide, N-cyclobutyl malayan, etc., such as lauryl maleimide, N-stearyl amidine, and the like. An aliphatic hydrocarbon group such as an amine, N-cyclopentylmaleimide, N-cyclohexylmaleimide, N-cycloheptylmaleimide, N-cyclooctylmaleimide or the like Indomethacin, N-phenylmaleimide, N-m-methylphenylmaleimide, N- A resin obtained by polymerization of an aromatic maleic imine or the like having an aryl group such as o-methylphenylmaleimide or N-p-methylphenylmaleimide.

例如,可使用以下述化學式(1)表示之重複單位及以下述化學式(2)表示之重複單位之共聚物的環烯烴寡聚物作為接著成分之樹脂。 For example, a resin having a cyclic olefin oligomer having a repeating unit represented by the following chemical formula (1) and a copolymer represented by the following chemical formula (2) as a binder component can be used.

(化學式(2)中,n為0或1~3之整數)。 (In the chemical formula (2), n is an integer of 0 or 1 to 3).

該環烯烴寡聚物可使用APL 8008T、APL 8009T、及APL 6013T(均為三井化學股份有限公司製)等。 As the cycloolefin oligomer, APL 8008T, APL 8009T, and APL 6013T (all manufactured by Mitsui Chemicals, Inc.) and the like can be used.

(彈性體) (elastomer)

彈性體較好含苯乙烯單位作為主鏈之構成單位,該「苯乙烯單位」亦可具有取代基。至於取代基列舉為例如碳數1~5之烷基、碳數1~5之烷氧基、碳數1~5之烷氧基烷基、乙醯氧基、羧基等。又,該苯乙烯單位之含量較好為14重量%以上、50重量%以下之範圍內。而且,彈性體之重量平均分子量較好為10,000以上,200,000以下之範圍內。 The elastomer preferably contains a styrene unit as a constituent unit of the main chain, and the "styrene unit" may have a substituent. The substituent is exemplified by, for example, an alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an alkoxyalkyl group having 1 to 5 carbon atoms, an ethoxy group, a carboxyl group and the like. Further, the content of the styrene unit is preferably in the range of 14% by weight or more and 50% by weight or less. Further, the weight average molecular weight of the elastomer is preferably in the range of 10,000 or more and 200,000 or less.

若苯乙烯單位之含量為14重量%以上、50重 量%以下之範圍內,彈性體之重量平均分子量為10,000以上、200,000以下之範圍內,則容易溶解於後述之烴系溶劑中,故可更容易且迅速地去除接著層。又,藉由使苯乙烯單位之含量及重量平均分子量落於上述之範圍內,而發揮對於將晶圓供於阻劑微影步驟時所暴露之阻劑溶劑(例如,PGMEA、PGME等)、酸(氫氟酸等)、鹼(TMAH)等之優異耐性。 If the content of styrene unit is 14% by weight or more, 50 weight When the weight average molecular weight of the elastomer is in the range of 10,000 or more and 200,000 or less, the amount of the elastomer is easily dissolved in the hydrocarbon solvent described later, so that the adhesive layer can be removed more easily and quickly. Further, by setting the content of the styrene unit and the weight average molecular weight within the above range, the resist solvent (for example, PGMEA, PGME, etc.) exposed when the wafer is subjected to the resist lithography step is exhibited. Excellent resistance to acids (hydrofluoric acid, etc.), alkalis (TMAH), etc.

又,彈性體中亦可進而混合上述(甲基)丙烯酸酯。 Further, the above (meth) acrylate may be further mixed in the elastomer.

又,苯乙烯單位之含量更好為17重量%以上,且更好為40重量%以下。 Further, the content of the styrene unit is more preferably 17% by weight or more, and still more preferably 40% by weight or less.

重量平均分子量之較佳範圍為20,000以上,又更好之範圍為150,000以下。 The weight average molecular weight is preferably in the range of 20,000 or more, and more preferably in the range of 150,000 or less.

至於彈性體若苯乙烯單為含量為14重量%以上、50重量%以下之範圍內,且彈性體之重量平均分子量為10,000以上、200,000以下之範圍內,則可使用各種彈性體。例如可使用聚苯乙烯-聚(乙烯/丙烯)嵌段共聚物(SEP)、苯乙烯-異戊二烯-苯乙烯嵌段共聚物(SIS)、苯乙烯-丁二烯-苯乙烯嵌段共聚物(SBS)、苯乙烯-丁二烯-丁烯-苯乙烯嵌段共聚物(SBBS)、及該等之氫化物、苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(SEBS)、苯乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(苯乙烯-異戊二烯-苯乙烯嵌段共聚物)(SEPS)、苯乙烯-乙烯-乙烯-丙烯-苯乙烯 嵌段共聚物(SEEPS)、苯乙烯嵌段為反應交聯型之苯乙烯-乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(SeptonV9461(KURARAY股份有限公司製))、苯乙烯嵌段為反應交聯型之苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(具有反應性之聚苯乙烯系硬質嵌段之SeptonV9827(KURARAY股份有限公司製))等之苯乙烯單位之含量及重量平均分子量在上述範圍內者。 When the elastomer is contained in a range of 14% by weight or more and 50% by weight or less, and the weight average molecular weight of the elastomer is in the range of 10,000 or more and 200,000 or less, various elastomers can be used. For example, polystyrene-poly(ethylene/propylene) block copolymer (SEP), styrene-isoprene-styrene block copolymer (SIS), styrene-butadiene-styrene block can be used. Copolymer (SBS), styrene-butadiene-butene-styrene block copolymer (SBBS), and such hydrides, styrene-ethylene-butylene-styrene block copolymer (SEBS) , styrene-ethylene-propylene-styrene block copolymer (styrene-isoprene-styrene block copolymer) (SEPS), styrene-ethylene-ethylene-propylene-styrene The block copolymer (SEEPS) and the styrene block are reaction-crosslinked type styrene-ethylene-ethylene-propylene-styrene block copolymer (Septon V9461 (manufactured by KURARAY Co., Ltd.)), and the styrene block is a reaction. Content and weight average of styrene units of a crosslinked styrene-ethylene-butylene-styrene block copolymer (Septon V9827 (manufactured by KURARAY Co., Ltd.) having a reactive polystyrene-based hard block) The molecular weight is within the above range.

又,彈性體中更好為氫化物。若為氫化物則對熱之穩定性提高,且不易引起分解或聚合等之變質。又,就對烴系溶劑之溶解性及對阻劑溶劑之耐性之觀點而言亦更好。 Further, the elastomer is more preferably a hydride. In the case of a hydride, the stability to heat is improved, and deterioration such as decomposition or polymerization is less likely to occur. Further, it is also preferable from the viewpoints of solubility in a hydrocarbon solvent and resistance to a solvent.

又,彈性體中更好為兩端係苯乙烯之嵌段聚合物。係因為藉由兩末端封端熱穩定性高之苯乙烯而顯示更高耐熱性之故。 Further, it is more preferable that the elastomer is a block polymer of styrene at both ends. This is because it exhibits higher heat resistance by capping styrene having high thermal stability at both ends.

更具體而言,彈性體更好為苯乙烯及共軛二烯之嵌段共聚物之氫化物。提高對熱之穩定性,且不易引起分解或聚合等之變質。又,藉由兩末端封端熱穩定性高之苯乙烯而顯示更高之耐熱性。此外,就對烴系溶劑之溶解性及對阻劑溶劑之耐性之觀點而言更好。 More specifically, the elastomer is more preferably a hydride of a block copolymer of styrene and a conjugated diene. Improve the stability to heat, and it is not easy to cause deterioration of decomposition or polymerization. Further, higher heat resistance is exhibited by blocking styrene having high thermal stability at both ends. Further, it is more preferable from the viewpoints of solubility in a hydrocarbon solvent and resistance to a solvent.

可使用作為本發明之接著劑組成物中所含之彈性體之市售品列舉為例如KURARAY股份有限公司製之「Septon(商品名)」、KURARAY股份有限公司製之「HYBRAR(商品名)」、旭化成股份有限公司製之「TUFTEC(商品名)」、JSR股份有限公司製之 「DYNARON(商品名)」等。 Commercial products which can be used as the elastomer contained in the adhesive composition of the present invention are, for example, "Septon (trade name)" manufactured by KURARAY Co., Ltd., and "HYBRAR (trade name)" manufactured by KURARAY Co., Ltd. "TUFTEC (trade name)" manufactured by Asahi Kasei Co., Ltd., manufactured by JSR Co., Ltd. "DYNARON (trade name)" and so on.

本發明之接著劑組成物中所含之彈性體含量 為例如以接著劑組成物總量作為100重量份,較好為50重量份以上、90重量份以下之範圍內,更好為60重量份以上、99重量份以下之範圍內,最好為70重量份以上、95重量份以下之範圍內。藉由成為該等範圍內,可一面維持耐熱性,一面適當地貼合晶圓與支撐體。 The elastomer content contained in the adhesive composition of the present invention For example, the total amount of the adhesive composition is 100 parts by weight, preferably 50 parts by weight or more and 90 parts by weight or less, more preferably 60 parts by weight or more and 99 parts by weight or less, and most preferably 70%. It is in the range of the weight part or more and 95 parts by weight or less. By being in these ranges, the wafer and the support can be appropriately bonded while maintaining heat resistance.

又,彈性體亦可混合複數種。亦即,本發明 之接著劑組成物亦可含複數種之彈性體。只要複數種彈性體中之至少一者含苯乙烯單位作為主鏈之構成單位即可。 又,只要複數種彈性體中之至少一者係苯乙烯單位之含量為14重量%以上、50重量%以下之範圍內,或,只要重量平均分子量為10,000以上、200,000以下之範圍內,則均為本發明之範圍。且,本發明之接著劑組成物中含複數種之彈性體時,混合之結果,亦可將苯乙烯單位之含量調整為上述範圍內。例如,以重量比1比1混合苯乙烯單位含量為30重量%之KURARAY股份有限公司製之Septon(商品名)之Septon4033、與苯乙烯單位含量為13重量%之Septon(商品名)之Septon2063時,苯乙烯含量相對於接著劑組成物中所含彈性體整體成為21~22重量%,因此成為14重量%以上。又,例如以重量比1比1混合苯乙烯單位為10重量%者與60重量%者時,成為35重量%,係在上述範圍內。本發明只要為該形態即可。又,本發明之接著劑組成物中所含之複數種彈性體最好全部以上 述範圍內含苯乙烯單位,且為上述範圍內之重量平均分子量。 Further, the elastomer may be mixed in a plurality of types. That is, the present invention The adhesive composition may also contain a plurality of elastomers. As long as at least one of the plurality of elastomers contains a styrene unit as a constituent unit of the main chain. Further, the content of at least one of the plurality of elastomers is in the range of 14% by weight or more and 50% by weight or less, or the weight average molecular weight is in the range of 10,000 or more and 200,000 or less. It is the scope of the invention. Further, when a plurality of elastomers are contained in the adhesive composition of the present invention, the content of the styrene unit may be adjusted to the above range as a result of mixing. For example, Septon 4033 of Septon (trade name) manufactured by Kuraray Co., Ltd. and Septon 2063 of Septon (trade name) having a styrene unit content of 13% by weight are mixed at a weight ratio of 1:1 by weight. The styrene content is 21 to 22% by weight based on the total amount of the elastomer contained in the adhesive composition, and therefore it is 14% by weight or more. Further, for example, when the styrene unit is 10% by weight or 60% by weight in a weight ratio of 1 to 1, it is 35% by weight, which is within the above range. The present invention is only required to be in this form. Further, it is preferable that all of the plurality of elastomers contained in the adhesive composition of the present invention are all or more The range includes styrene units and is a weight average molecular weight within the above range.

又,較好使用光硬化性樹脂(例如,UV硬化 性樹脂)以外之樹脂形成接著層13。此係因為在接著層13剝離或去除後,會有光硬化性樹脂可能作為殘留物殘留在基板11之微小凹凸周邊之情況。尤其,較好以能溶解於特定溶劑之接著劑作為構成接著層13之材料。此係因為不需對基板11施加物理力,即可藉由使接著層13溶解於溶劑中而去除。於接著層13去除時,使強度下降並自基板11清除,而不使基板11破損、變形,即可容易地去除接著層13。 Further, it is preferred to use a photocurable resin (for example, UV curing) The adhesive layer is formed of a resin other than the resin. This is because the photocurable resin may remain as a residue on the periphery of the micro unevenness of the substrate 11 after the adhesive layer 8 is peeled off or removed. In particular, it is preferred to use a binder which can be dissolved in a specific solvent as a material constituting the adhesive layer 13. This is because the physical force of the substrate 11 is not required to be removed by dissolving the adhesive layer 13 in a solvent. When the adhesive layer 13 is removed, the strength is lowered and removed from the substrate 11, and the adhesive layer 13 can be easily removed without breaking or deforming the substrate 11.

(稀釋溶劑) (diluted solvent)

形成第二分離層、接著層時之稀釋溶劑可列舉為例如己烷、庚烷、辛烷、壬烷、甲基辛烷、癸烷、十一烷、十二烷、十三烷等直鏈狀烴、碳數4至15之分支狀烴,例如、環己烷、環庚烷、環辛烷、萘、十氫萘、四氫萘等環狀烴、對-薄荷烷、鄰-薄荷烷、間-薄荷烷、二苯基薄荷烷、1,4-萜品、1,8-萜品、冰片烷、降冰片烷、蒎烷、側柏烷(Thujane)、蒈烷、長葉烯(longifolene)、香葉醇(geraniol)、橙花醇(nerol)、沉香醇(linalool)、檸檬醛(citral)、香茅醇(Citronellol)、薄荷醇、異薄荷醇、新薄荷醇、α-松油醇、β-松油醇、γ-松油醇、松油-1-醇、松油-4-醇、二氫松油醇乙酸酯、1,4-桉油醇(cineol) 、1,8-桉油醇、龍腦(borneol)、香芹酮(carvone)、紫羅蘭酮(ionone)、側柏酮(thujone)、樟腦、d-檸檬烯(limonene)、1-檸檬烯、二戊烯等萜烯系溶劑;γ-丁內酯等內酯類;丙酮、甲基乙基酮、環己酮(CH)、甲基-正戊酮、甲基異戊酮、2-庚酮等酮類;乙二醇、二乙二醇、丙二醇、二丙二醇等多元醇類;乙二醇單乙酸酯、二乙二醇單乙酸酯、丙二醇單乙酸酯、或二丙二醇單乙酸酯等之具有酯鍵之化合物,前述多元醇類或前述具有酯鍵之化合物之單甲醚、單乙醚、單丙醚、單丁醚等之單烷醚或單苯醚等之具有醚鍵之化合物等之多元醇類之衍生物(該等中,以丙二醇單甲醚乙酸酯(PGMEA)、丙二醇單甲醚(PGME)較佳);如二噁烷之環式醚類,或乳酸甲酯、乳酸乙酯(EL)、乙酸甲酯、乙酸乙酯、乙酸丁酯、乙酸甲氧基丁基酯、丙酮酸甲酯、丙酮酸乙酯、甲氧基丙酸甲酯、乙氧基丙酸乙酯等酯類;苯甲醚、乙基苄基醚、甲苯基甲基醚、二苯基醚、二苄基醚、苯乙醚、丁基苯基醚等之芳香族系有機溶劑等。 The diluent solvent for forming the second separation layer and the subsequent layer may, for example, be a linear chain such as hexane, heptane, octane, decane, methyl octane, decane, undecane, dodecane or tridecane. a hydrocarbon, a branched hydrocarbon having 4 to 15 carbon atoms, for example, a cyclic hydrocarbon such as cyclohexane, cycloheptane, cyclooctane, naphthalene, decahydronaphthalene or tetrahydronaphthalene, p-menthane or o-menthane. , m-menthane, diphenyl menthane, 1,4-deuterate, 1,8-deuterate, borneol, norbornane, decane, thujane, decane, longene ( Longifolene), geraniol, nerol, linalool, citral, Citronellol, menthol, isomenthol, neomenthol, alpha-pine Oleohydrin, β-terpineol, γ-terpineol, terpineol-1-ol, terpineol-4-ol, dihydroterpineol acetate, 1,4-alcohol (cineol) 1,8-nonyl oleyl alcohol, borneol, carvone, ionone, thujone, camphor, d-limonene, 1-limonene, dipentane Terpenes such as olefins; lactones such as γ-butyrolactone; acetone, methyl ethyl ketone, cyclohexanone (CH), methyl-n-pentanone, methyl isoamyl ketone, 2-heptanone, etc. Ketones; polyols such as ethylene glycol, diethylene glycol, propylene glycol, dipropylene glycol; ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, or dipropylene glycol monoacetic acid a compound having an ester bond such as an ester, or an ether bond such as a monomethyl ether of a compound having the ester bond, a monoether ether such as monoethyl ether, monopropyl ether or monobutyl ether or a monophenyl ether. a derivative of a polyhydric alcohol of a compound or the like (in which propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME) is preferred); a cyclic ether such as dioxane, or a lactate Ester, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methoxybutyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, ethoxylate Propionate B An ester such as an ester; an aromatic organic solvent such as anisole, ethylbenzyl ether, tolyl methyl ether, diphenyl ether, dibenzyl ether, phenethyl ether or butylphenyl ether.

(其他成分) (other ingredients)

構成接著層之接著劑在不損及本質特性之範圍內,亦可進一步包含具有混合性之其他物質。例如,可進一步使用用以改良接著劑性能之加成樹脂、可塑劑、接著輔助劑、穩定劑、著色劑、熱聚合抑制劑及界面活性劑等慣用之各種添加劑。 The adhesive constituting the adhesive layer may further contain other substances having a miscibility within a range not impairing the essential characteristics. For example, various conventional additives such as an additive resin, a plasticizer, an auxiliary agent, a stabilizer, a colorant, a thermal polymerization inhibitor, and a surfactant for improving the performance of the adhesive can be further used.

[支撐體] [support]

支撐板(支撐體)12意指支撐基板11之支撐體,具有光透過性。因此,自層合體20外朝向支撐板12照射光時,該光通過支撐板12到達第二分離層14及第一分離層15。又,支撐板12未必一定使全部之光透過,只要可使應被第二分離層14及第一分離層15吸收(具有特定波長)之光透過即可。 The support plate (support) 12 means a support for supporting the substrate 11, and has light transparency. Therefore, when light is irradiated from the outside of the laminate 20 toward the support plate 12, the light reaches the second separation layer 14 and the first separation layer 15 through the support plate 12. Further, the support plate 12 does not necessarily have to transmit all of the light, and it is only necessary to transmit light that should be absorbed by the second separation layer 14 and the first separation layer 15 (having a specific wavelength).

支撐板12係支撐基板11者,只要於基板11之薄化、搬送、安裝等製程時,具有用以防止基板11之破損或變形之必要強度即可。基於以上之觀點,作為支撐板12列舉為由玻璃、矽、丙烯酸系樹脂所成者等。 The support plate 12 is a support substrate 11 and may have a necessary strength for preventing damage or deformation of the substrate 11 when the substrate 11 is thinned, transported, or mounted. From the above viewpoints, the support plate 12 is exemplified by glass, enamel, or acrylic resin.

[第一分離層] [first separation layer]

第一分離層15意指由藉由吸收透過支撐板12所照射之光而變質之材料形成之層。又,第一分離層15係藉由使用含有具有不飽和鍵之有機化合物與氟化合物之反應氣體進行電漿處理之分離層形成步驟而形成。其一實施形態中,第一分離層15係以被覆形成於支撐板12上之第二分離層14之方式設置。 The first separation layer 15 means a layer formed of a material which is deteriorated by absorbing light irradiated through the support plate 12. Further, the first separation layer 15 is formed by a separation layer forming step of performing plasma treatment using a reaction gas containing an organic compound having an unsaturated bond and a fluorine compound. In one embodiment, the first separation layer 15 is provided to cover the second separation layer 14 formed on the support plate 12.

本說明書中,所謂使第一分離層15「變質」係指接受少許外力即可破壞第一分離層15之狀態,或使第一分離層15與接觸之層之接著力降低之狀態之現象。藉由吸收光產生之第一分離層15變質之結果,第一分離 層15喪失受光照射前之強度或接著性。 In the present specification, the term "deterioration" of the first separation layer 15 means a state in which the first separation layer 15 is broken by receiving a small external force, or a state in which the adhesion between the first separation layer 15 and the contact layer is lowered. The first separation by the deterioration of the first separation layer 15 generated by the absorption of light Layer 15 loses its strength or adhesion prior to exposure to light.

又,第一分離層15之變質可為因經吸收光的 能量所致之(發熱性或非發熱性)分解、交聯、立體配置變化或官能基解離(而且,隨此等之分離層硬化、脫氣、收縮或膨脹)等。第一分離層15之變質係因構成第一分離層15之材料吸收光之結果所產生。因此,第一分離層15之變質種類可依據構成第一分離層15之材料之種類而變化。 Moreover, the deterioration of the first separation layer 15 may be due to absorption of light. Energy-induced (heat-generating or non-heat-generating) decomposition, cross-linking, stereo configuration change, or functional group dissociation (and, in addition, the separation layer hardens, degassing, shrinking, or expanding). The deterioration of the first separation layer 15 is caused by the absorption of light by the material constituting the first separation layer 15. Therefore, the type of deterioration of the first separation layer 15 may vary depending on the kind of the material constituting the first separation layer 15.

用於使第一分離層15變質而照射於第一分離 層15之光亦可為由雷射照射者。作為發射照射至第一分離層15之光之雷射之例列舉為YAG雷射、紅寶石雷射、玻璃雷射、YVO4雷射、LD雷射、光纖雷射等固體雷射,色素雷射等液體雷射,CO2雷射、準分子雷射、Ar雷射、He-Ne雷射等氣體雷射、半導體雷射、自由電子雷射等雷射光,或非雷射光等。發射照射至第一分離層15之光之雷射可依據構成第一分離層15之材料適當選擇,只要選擇照射可使構成第一分離層15之材料變質之波長之光之雷射即可。 The light for tempering the first separation layer 15 and irradiating the first separation layer 15 may also be irradiated by a laser. Examples of the laser that emits light that is irradiated to the first separation layer 15 are a solid laser such as a YAG laser, a ruby laser, a glass laser, a YVO 4 laser, an LD laser, or a fiber laser, and a pigment laser. Such as liquid laser, CO 2 laser, excimer laser, Ar laser, He-Ne laser and other gas lasers, semiconductor lasers, free electron laser and other laser light, or non-laser light. The laser light that emits the light irradiated to the first separation layer 15 can be appropriately selected depending on the material constituting the first separation layer 15, and it is only necessary to select a laser that can illuminate the light of the wavelength constituting the material of the first separation layer 15.

[第一分離層形成步驟] [First separation layer forming step]

本發明之層合體之製造方法所包含之第一分離層形成步驟係使用含有具有不飽和鍵之有機化合物與氟化合物之反應氣體進行電漿處理,藉此形成第一分離層之步驟。 The first separation layer forming step included in the method for producing a laminate of the present invention is a step of forming a first separation layer by performing a plasma treatment using a reaction gas containing an organic compound having an unsaturated bond and a fluorine compound.

(反應氣體) (reaction gas)

本申請案之發明人針對藉由電漿處理之層合體之分離層形成,獨自檢討之結果,發現藉由使用在常溫下液狀之有機化合物與氟化合物作為反應氣體,可形成可使層合之基板大型化之分離層。 The inventors of the present application have independently studied the formation of a separation layer of a laminate treated by plasma, and found that laminating can be formed by using a liquid compound in a liquid state at a normal temperature and a fluorine compound as a reaction gas. The separation layer of the substrate is enlarged.

本實施形態之層合體之製造方法中,用以形成第一分離層所用之反應氣體較好含有具有不飽和鍵之有機化合物與氟化合物。 In the method for producing a laminate according to the present embodiment, the reaction gas used for forming the first separation layer preferably contains an organic compound having an unsaturated bond and a fluorine compound.

有機化合物只要具有不飽和鍵者即可,可列舉為例如烯、環烯、炔及芳香族化合物。此處,烯可列舉為例如1,2-丁二烯、1,3-丁二烯、2,3-二甲基-1,3-丁二烯、3-甲基-1,2-丁二烯、異戊二烯等。又,環烯可列舉為例如1,3-己二烯、1,4-己二烯、環戊二烯、1,5-環辛二烯等。又,炔可列舉為例如乙炔等。又,芳香族化合物可列舉為苯、甲苯、二甲苯、苯乙烯等。又,若具有不飽和鍵,則可使用具有例如醚鍵、酯鍵及矽氧鍵等之有機化合物。具有醚鍵及/或矽氧鍵之有機化合物可列舉為例如1-甲氧基-3-(三甲基矽烷氧基)-1,3-丁二烯、及2-三甲基矽烷氧基-1,3-丁二烯等。又,具有酯鍵之有機化合物可列舉為例如2,3-丁二烯酸乙酯等。又,該等有機化合物亦可混合2種以上使用。藉由使用該等有機化合物作為電漿處理之反應氣體,可將不飽和鍵導入第一分離層15中。藉此,不僅是高密度電漿而且在低密度電漿中均可形成藉由吸收光而變質之第一分離層15。 The organic compound may be an unsaturated bond as long as it has an unsaturated bond, and examples thereof include an alkene, a cycloolefin, an alkyne, and an aromatic compound. Here, the olefin can be exemplified by, for example, 1,2-butadiene, 1,3-butadiene, 2,3-dimethyl-1,3-butadiene, 3-methyl-1,2-butyl Diene, isoprene, and the like. Further, examples of the cycloolefin include 1,3-hexadiene, 1,4-hexadiene, cyclopentadiene, and 1,5-cyclooctadiene. Further, the alkyne may, for example, be acetylene or the like. Further, examples of the aromatic compound include benzene, toluene, xylene, and styrene. Further, if it has an unsaturated bond, an organic compound having, for example, an ether bond, an ester bond, and a xenon bond can be used. The organic compound having an ether bond and/or a oxime bond may, for example, be 1-methoxy-3-(trimethyldecyloxy)-1,3-butadiene, and 2-trimethyldecyloxy group. -1,3-butadiene and the like. Further, examples of the organic compound having an ester bond include, for example, ethyl 2,3-butadienoate. Further, these organic compounds may be used in combination of two or more kinds. By using these organic compounds as a reaction gas for plasma treatment, an unsaturated bond can be introduced into the first separation layer 15. Thereby, the first separation layer 15 which is deteriorated by absorbing light can be formed not only in the high-density plasma but also in the low-density plasma.

此處,有機化合物較好為烯或環烯。烯或環 烯具有不易因低密度電漿而崩解之構造。因此,藉由於反應氣體中含有烯或環烯,可使電漿處理中之烯或環烯不會過度崩解而可適當地聚合。又,可於藉由電漿處理形成之第一分離層15中導入不飽和鍵。因此,藉由使用烯或環烯作為有機化合物,可較好地形成藉由吸收光而變質之第一分離層15。 Here, the organic compound is preferably an alkene or a cycloolefin. Alkene or ring Alkene has a structure that is not easily disintegrated by low-density plasma. Therefore, since the reaction gas contains an olefin or a cycloolefin, the olefin or the cycloolefin in the plasma treatment can be appropriately polymerized without excessively disintegrating. Further, an unsaturated bond can be introduced into the first separation layer 15 formed by the plasma treatment. Therefore, by using an olefin or a cycloolefin as an organic compound, the first separation layer 15 which is deteriorated by absorbing light can be preferably formed.

又,有機化合物之不飽和鍵較好為2個以上。藉此,可形成可更適於吸收光之第一分離層。 Further, the unsaturated bond of the organic compound is preferably two or more. Thereby, a first separation layer which is more suitable for absorbing light can be formed.

又,有機化合物之沸點較好為30℃以上且100℃以下之範圍內,更好為30℃以上且60℃以下之範圍內,最好為40℃以上且50℃以下之範圍內。若有機化合物之沸點在30℃以上且100℃以下之範圍內,則電漿處理用之條件中,可適當地使用有機化合物作為反應氣體。 Further, the boiling point of the organic compound is preferably in the range of 30 ° C or more and 100 ° C or less, more preferably in the range of 30 ° C or more and 60 ° C or less, and more preferably in the range of 40 ° C or more and 50 ° C or less. When the boiling point of the organic compound is in the range of 30 ° C or more and 100 ° C or less, an organic compound can be suitably used as the reaction gas in the conditions for plasma treatment.

作為本實施形態之層合體之製造方法中使用之反應氣體所含有之氟化合物可列舉為例如氟碳、四氟化碳(CF4)、三氟化氮(NF3)及六氟化硫(SF6)等。作為氟碳可列舉為例如C4F8等。藉由於反應氣體中含有氟化合物,可改善第一分離層15之脆性,且可提高第一分離層15之耐藥品性。此處,氟化合物最好為六氟化硫(SF6)。藉由於反應氣體中含有六氟化硫(SF6),可進而改善第一分離層之脆性,且可較好地形成耐藥品性良好之第一分離層。 Examples of the fluorine compound contained in the reaction gas used in the method for producing a laminate of the present embodiment include fluorocarbon, carbon tetrafluoride (CF 4 ), nitrogen trifluoride (NF 3 ), and sulfur hexafluoride ( SF 6 ) and so on. The fluorocarbon may, for example, be C 4 F 8 or the like. By containing a fluorine compound in the reaction gas, the brittleness of the first separation layer 15 can be improved, and the chemical resistance of the first separation layer 15 can be improved. Here, the fluorine compound is preferably sulfur hexafluoride (SF 6 ). By containing sulfur hexafluoride (SF 6 ) in the reaction gas, the brittleness of the first separation layer can be further improved, and the first separation layer having good chemical resistance can be preferably formed.

(電漿處理) (plasma processing)

作為電漿處理所用之電漿處理裝置並無特別限制,可使用習知之電漿處理裝置。 The plasma processing apparatus used for the plasma treatment is not particularly limited, and a conventional plasma processing apparatus can be used.

電漿處理裝置所具備之電極並無特別限制, 可為例如雙線圈天線、單線圈天線、或平行平板電極,但藉由使用平行平板電極,可使支撐體上形成之第一分離層之表面積變得更大,其結果,可使用直徑更大之基板製造層合體。 The electrode provided in the plasma processing apparatus is not particularly limited. For example, a double coil antenna, a single coil antenna, or a parallel plate electrode can be used, but by using a parallel plate electrode, the surface area of the first separation layer formed on the support can be made larger, and as a result, the diameter can be used more. The large substrate is made of a laminate.

電漿處理裝置之反應室之形狀並無特別限 制,可為半球型,亦可為圓筒形等其他形狀。反應室之尺寸只要依據處理對象之基板尺寸適當選擇即可。又,反應室之材質可適當選擇不妨礙電漿處理及第一分離層之形成之習知材料。 The shape of the reaction chamber of the plasma processing device is not particularly limited. The system may be of a hemispherical shape or may have other shapes such as a cylindrical shape. The size of the reaction chamber may be appropriately selected depending on the substrate size of the object to be processed. Further, the material of the reaction chamber can be appropriately selected from conventional materials which do not interfere with the plasma treatment and the formation of the first separation layer.

電漿處理裝置中產生之電漿存在有依據施加 於線圈電極或平行平板電極之高頻電力產生之靜電場所致之電容耦合電漿(CCP:Conductive Coupled Plasma),與因流至線圈電極之高頻電流而發生之感應電場所致之感應耦合電漿(ICP:Inductive Coupled Plasma)。 The plasma generated in the plasma processing device has a basis for application Inductively coupled plasma (CCP: Conductive Coupled Plasma) generated by high-frequency power generated by coil electrodes or parallel plate electrodes, and inductive coupling caused by induced electric field due to high-frequency current flowing to the coil electrode ICP (Inductive Coupled Plasma).

本實施形態中,第一分離層形成步驟之電漿 處理以低密度電漿處理較佳。此處,所謂低密度電漿係意指離子密度在1×1010cm-3以下之電漿,且意指電容耦合主體之電漿。藉由採用低密度電漿處理作為第一分離層形成步驟之電漿處理,變得容易使電漿處理裝置之大型化。因此,能使支撐體上形成之第一分離層之表面積變得更大。 因此,使層合之基板之大型化成為可能。 In the present embodiment, the plasma treatment of the first separation layer forming step is preferably performed by low-density plasma treatment. Here, the low-density plasma system means a plasma having an ion density of 1 × 10 10 cm -3 or less, and means a plasma of a capacitively coupled body. By using low-density plasma treatment as the plasma treatment of the first separation layer forming step, it becomes easy to increase the size of the plasma processing apparatus. Therefore, the surface area of the first separation layer formed on the support can be made larger. Therefore, it is possible to increase the size of the laminated substrate.

使用圖2,針對本發明之一實施形態之層合體製造方法所包含之第一分離層形成步驟更詳細加以說明。圖2係針對本發明之一實施形態之製造方法所包含之第一分離層製造步驟說明之示意圖。 The first separation layer forming step included in the method for producing a laminate according to an embodiment of the present invention will be described in more detail with reference to Fig. 2 . Fig. 2 is a schematic view showing the steps of manufacturing the first separation layer included in the production method according to an embodiment of the present invention.

如圖2所示,本實施形態之層合體之製造方法所包含之第一分離層形成步驟所用之電漿處理裝置100係在反應室101內具備一對平行平板電極102、載置支撐板12之載台103的構成。此處,電漿處理裝置100係藉由配管116a以經過液體主流動控制器112及氣化器113之方式,與已儲存有機化合物之容器111連通,且藉由配管116b以經過主流動控制器115之方式,連通至氟化合物壓力罐114。又,配管116a與116b合流至配管116。 As shown in FIG. 2, the plasma processing apparatus 100 used in the first separation layer forming step included in the method for producing a laminate of the present embodiment includes a pair of parallel plate electrodes 102 and a mounting support plate 12 in the reaction chamber 101. The configuration of the stage 103. Here, the plasma processing apparatus 100 is connected to the container 111 in which the organic compound has been stored by the liquid main flow controller 112 and the vaporizer 113 via the pipe 116a, and passes through the main flow controller through the pipe 116b. In the manner of 115, it is connected to the fluorine compound pressure tank 114. Further, the pipes 116a and 116b are joined to the pipe 116.

反應室101係用以藉由電漿處理,為了自反應氣體形成第一分離層15而使用。又,反應室101係藉真空泵(未圖示)使反應室101內之壓力可被調整。 The reaction chamber 101 is used for plasma treatment to form the first separation layer 15 from the reaction gas. Further, in the reaction chamber 101, the pressure in the reaction chamber 101 can be adjusted by a vacuum pump (not shown).

將一對平行平板電極102設置在反應室101內,使用藉由施加高頻電力之反應氣體產生電漿。 A pair of parallel plate electrodes 102 are disposed in the reaction chamber 101, and plasma is generated using a reaction gas by applying high frequency power.

載台103具備一對平行平板電極102之一者,而可載置支撐板12。 The stage 103 is provided with one of a pair of parallel plate electrodes 102, and the support plate 12 can be placed.

容器111係儲存反應氣體中所使用之有機化合物,藉由氮加壓,透過配管116a將有機化合物供給於液體主流動控制器112。 The container 111 stores the organic compound used in the reaction gas, and is pressurized by nitrogen, and the organic compound is supplied to the liquid main flow controller 112 through the pipe 116a.

液體主流動控制器112為調整有機化合物流 量之裝置,係透過配管116a調整供於氣化器113之有機化合物之流量。 Liquid main flow controller 112 is for adjusting the flow of organic compounds The amount of the device adjusts the flow rate of the organic compound supplied to the gasifier 113 through the pipe 116a.

氟化合物壓力罐114為儲存反應氣體中所使用之氟化合物之壓力罐,且透過配管116b將氟氣體供於主流動控制器115。 The fluorine compound pressure tank 114 is a pressure tank for storing a fluorine compound used in the reaction gas, and the fluorine gas is supplied to the main flow controller 115 through the pipe 116b.

主流動控制器115為調整氟氣體流量之裝置,係透過配管116b調整所供給之氟氣體之流量。 The main flow controller 115 is a device for adjusting the flow rate of the fluorine gas, and the flow rate of the supplied fluorine gas is adjusted through the pipe 116b.

配管116a及配管116b合流至配管116。此處,藉由對配管116加熱,可防止反應氣體之液化。 The pipe 116a and the pipe 116b are joined to the pipe 116. Here, by heating the pipe 116, liquefaction of the reaction gas can be prevented.

如圖2所示,於第一分離層形成步驟中,係在反應室101內,將支撐板12載置於具備一對平行平板電極102之一者之載台103上。此處,亦可進行對反應室101內與支撐板12預加熱之預加熱步驟。 As shown in FIG. 2, in the first separation layer forming step, the support plate 12 is placed in the reaction chamber 101 on the stage 103 including one of the pair of parallel plate electrodes 102. Here, a preheating step of preheating the support plate 12 in the reaction chamber 101 may also be performed.

又,預處理中,亦可藉由使預處理氣體中含有氧氣,而清潔支撐板12之表面。 Further, in the pretreatment, the surface of the support plate 12 can also be cleaned by containing oxygen in the pretreatment gas.

第一分離層形成步驟中,係將成為第一分離層15之反應氣體供給於反應室101內,藉由電漿處理於支撐板12上形成第一分離層15。此處,反應氣體中含有之有機化合物係自容器111所供給,藉由液體主流動控制器112調整流量,以氣化器113氣化。又,氟化合物係自氟化合物壓力罐114供給,藉由主流動控制器115調整流量。隨後,經氣化之有機化合物與氟化合物在配管116中混合,邊加熱邊供給於反應室101內。 In the first separation layer forming step, the reaction gas which becomes the first separation layer 15 is supplied into the reaction chamber 101, and the first separation layer 15 is formed on the support plate 12 by plasma treatment. Here, the organic compound contained in the reaction gas is supplied from the vessel 111, and the flow rate is adjusted by the liquid main flow controller 112 to be vaporized by the gasifier 113. Further, the fluorine compound is supplied from the fluorine compound pressure tank 114, and the flow rate is adjusted by the main flow controller 115. Subsequently, the vaporized organic compound and the fluorine compound are mixed in the pipe 116, and supplied to the reaction chamber 101 while being heated.

藉由以液體主流動控制器112及主流動控制 器115調整有機化合物及氟氣體之流量,可調整反應氣體所含有之有機化合物與氟化合物之體積比。例如,若有機化合物與氟化合物之體積比為6:4~9:1,則可形成不脆、耐藥品性良好之第一分離層。又,可形成可在透過支撐板照射光後,可藉洗淨液較好地去除之第一分離層。又,在第一分離層形成步驟之過程中亦可調整有機化合物與氟化合物之體積比。 By controlling the liquid main flow controller 112 and the main flow The device 115 adjusts the flow rate of the organic compound and the fluorine gas, and adjusts the volume ratio of the organic compound to the fluorine compound contained in the reaction gas. For example, when the volume ratio of the organic compound to the fluorine compound is from 6:4 to 9:1, a first separation layer which is not brittle and has good chemical resistance can be formed. Further, a first separation layer which can be preferably removed by the cleaning liquid after the light is transmitted through the support plate can be formed. Further, the volume ratio of the organic compound to the fluorine compound may be adjusted during the first separation layer forming step.

又,反應氣體中亦可添加1種以上之氮、氦、氬等惰性氣體、氫、氧等添加氣體。 Further, one or more inert gases such as nitrogen, helium, and argon, and an additive gas such as hydrogen or oxygen may be added to the reaction gas.

反應室101內之目標溫度並無特別限制,可使用習知溫度,但較好為100℃以上且300℃以下之範圍內,最好為200℃以上且250℃以下之範圍內。藉由將反應室內之溫度設定在該範圍,可較好地進行電漿處理。 The target temperature in the reaction chamber 101 is not particularly limited, and a known temperature can be used, but it is preferably in the range of 100 ° C or more and 300 ° C or less, preferably in the range of 200 ° C or more and 250 ° C or less. By setting the temperature in the reaction chamber to this range, the plasma treatment can be preferably performed.

第一分離層形成步驟中形成之第一分離層15之厚度並無特別限制,只要是可充分吸收所使用之光的膜厚即可,但更好為例如0.5μm以上且2.0μm以下之範圍內之膜厚,最好為1.0μm以上、1.5μm以下之範圍內之膜厚。第一分離層形成步驟中之第一分離層15之形成時間只要依據形成之膜厚設定即可。 The thickness of the first separation layer 15 formed in the first separation layer forming step is not particularly limited as long as it is sufficient to sufficiently absorb the film thickness of the light to be used, but is preferably in the range of, for example, 0.5 μm or more and 2.0 μm or less. The film thickness in the film is preferably in the range of 1.0 μm or more and 1.5 μm or less. The formation time of the first separation layer 15 in the first separation layer forming step may be set according to the film thickness formed.

[第二分離層形成步驟] [Second separation layer forming step]

本發明之層合體之製造方法,於一實施形態中,進一步包含形成藉由吸收透過支撐體所照射之光而變質之第二分離層之第二分離層形成步驟。 In one embodiment, the method for producing a laminate according to the present invention further includes a second separation layer forming step of forming a second separation layer which is deteriorated by absorbing light irradiated through the support.

藉此,對層合體進行期望之處理時,可一面 藉分離層而防止第二分離層因各種藥品處理而變質,一面製造可藉由透過支撐體所照射之光使第二分離層及分離層適當變質之層合體。 Thereby, when the laminate is subjected to the desired treatment, one side can be By the separation layer, the second separation layer is prevented from being deteriorated by various drug treatments, and a laminate which can appropriately deteriorate the second separation layer and the separation layer by the light irradiated through the support is produced.

使用圖1,針對本發明一實施形態包含之第二 分離層形成步驟加以說明。 Using FIG. 1, a second embodiment is included in an embodiment of the present invention. The separation layer forming step will be described.

如圖1之(3)~(4)所示,本發明之層合體 之製造方法中包含之第二分離層形成步驟係在分離層形成步驟之前,形成藉由吸收透過支撐板12所照射之光而變質之第二分離層14之步驟。 As shown in (3) to (4) of Fig. 1, the laminate of the present invention The second separation layer forming step included in the manufacturing method is a step of forming the second separation layer 14 which is deteriorated by absorbing light irradiated through the support plate 12 before the separation layer forming step.

一實施形態中,如圖1之(3)~(4)所示, 於支撐板12上形成第二分離層14。隨後,如圖1之(4)~(5)所示,利用第一分離層形成步驟於第二分離層14上形成第一分離層15。據此,於支撐板12上形成第二分離層14與第一分離層15。 In one embodiment, as shown in (3) to (4) of FIG. 1 , A second separation layer 14 is formed on the support plate 12. Subsequently, as shown in (4) to (5) of FIG. 1, the first separation layer 15 is formed on the second separation layer 14 by the first separation layer forming step. Accordingly, the second separation layer 14 and the first separation layer 15 are formed on the support plate 12.

(第二分離層) (second separation layer)

第二分離層14係由藉由吸收透過支撐板12所照射之光而變質之材料所形成之層。一實施形態中,第二分離層14係披覆於第一分離層形成步驟中之第一分離層15上。 The second separation layer 14 is a layer formed of a material which is deteriorated by absorbing light irradiated through the support plate 12. In one embodiment, the second separation layer 14 is coated on the first separation layer 15 in the first separation layer forming step.

又,本說明書中,第二分離層14中所謂「變質」係指與第一分離層15中之「變質」相同之現象。 In the present specification, the term "deterioration" in the second separation layer 14 means the same phenomenon as "deterioration" in the first separation layer 15.

又,發射照射於第二分離層14之光之雷射可依據構成第二分離層14之材料適當選擇,只要選擇照射 可使構成第二分離層14之材料變質之波長之光之雷射即可。 Further, the laser that emits the light irradiated to the second separation layer 14 may be appropriately selected depending on the material constituting the second separation layer 14, as long as the irradiation is selected It is sufficient that the laser of the wavelength of the material constituting the second separation layer 14 is deteriorated.

第二分離層14設置在支撐板12中介隔接著層13貼合基板11之側之表面上。 The second separation layer 14 is disposed on the surface of the support plate 12 on the side of the substrate 13 to which the substrate 11 is bonded.

第二分離層14之厚度較好為例如0.05μm以上且50μm以下之範圍內,更好為0.3μm以上且1μm以下之範圍內。若第二分離層14之厚度侷限在0.05μm以上且50μm以下之範圍內,則藉由短時間之光照射及低能量之光照射,即可使第二分離層14產生期望之變質。又,第二分離層14之厚度就生產性之觀點而言最好侷限於1μm以下之範圍內。 The thickness of the second separation layer 14 is preferably in the range of, for example, 0.05 μm or more and 50 μm or less, more preferably in the range of 0.3 μm or more and 1 μm or less. If the thickness of the second separation layer 14 is limited to a range of 0.05 μm or more and 50 μm or less, the second separation layer 14 can be desirably deteriorated by irradiation with light for a short period of time and irradiation with low-energy light. Further, the thickness of the second separation layer 14 is preferably limited to the range of 1 μm or less from the viewpoint of productivity.

又,層合體20中,亦可進一步在第二分離層14與支撐板12之間形成其他層。該情況下,其他層只要由能透過光之材料構成即可。據此,不會妨礙光朝第二分離層14之入射,可適當追加對層合體20賦予較佳性質等之層。依據構成第二分離層14之材料種類而定,可使用之光波長亦不同。因此,構成其他層之材料並不需要使所有光透過,可由可使構成第二分離層14之材料變質之波長的光透過之材料中適當選擇。 Further, in the laminate 20, another layer may be further formed between the second separation layer 14 and the support plate 12. In this case, the other layers may be formed of a material that transmits light. Accordingly, the light is prevented from entering the second separation layer 14, and a layer having a preferable property or the like to the laminate 20 can be appropriately added. Depending on the type of material constituting the second separation layer 14, the wavelength of light that can be used is also different. Therefore, the material constituting the other layer does not need to transmit all of the light, and can be appropriately selected from materials which can transmit light of a wavelength at which the material constituting the second separation layer 14 is deteriorated.

而且,第二分離層14較好僅由具有能吸收光之構造的材料所形成,但在不損及本發明之本質特性之範圍內,亦可添加不具有能吸收光之構造的材料形成第二分離層14。又,第二分離層14之與接著層13對向之側的面較好為平坦(未形成凹凸),據此,可容易地進行第二 分離層14之形成,且貼附時亦可均一地貼附。 Further, the second separation layer 14 is preferably formed only of a material having a structure capable of absorbing light, but may be formed by adding a material having a structure capable of absorbing light within a range not impairing the essential characteristics of the present invention. Two separate layers 14. Further, the surface of the second separation layer 14 on the side opposite to the adhesion layer 13 is preferably flat (no unevenness is formed), whereby the second portion can be easily performed. The separation layer 14 is formed and can be uniformly attached when attached.

第二分離層14可如下所示將構成第二分離層 14之材料預先形成為薄膜狀而成者貼合於支撐板12上而使用,亦將構成第二分離層14之材料塗佈於支撐板12上並固化成薄膜狀者而使用。將構成第二分離層14之材料塗佈於支撐板12上之方法可依據構成第二分離層14之材料種類,由以化學氣相成長(CVD)法之堆積等之過去習知方法適當選擇。 The second separation layer 14 may constitute a second separation layer as shown below The material of 14 is formed into a film shape in advance and bonded to the support plate 12, and the material constituting the second separation layer 14 is also applied to the support plate 12 and cured into a film shape. The method of applying the material constituting the second separation layer 14 to the support plate 12 can be appropriately selected by a conventional method known in the art of chemical vapor deposition (CVD) deposition or the like depending on the kind of the material constituting the second separation layer 14. .

第二分離層14亦可為藉由吸收自雷射所照射 之光而變質者。亦即,為使第二分離層14變質而照射至第二分離層14之光亦可為自雷射照射者。作為發射照射至第二分離層14之光的雷射之例列舉為YAG雷射、紅寶石雷射、玻璃雷射、YVO4雷射、LD雷射、光纖雷射等固體雷射,色素雷射等液體雷射,CO2雷射、準分子雷射、Ar雷射、He-Ne雷射等氣體雷射、半導體雷射、自由電子雷射等雷射光,或非雷射光等。發射照射至第二分離層14之光之雷射可依據構成第二分離層14之材料適當選擇,只要選擇照射可使構成第二分離層14之材料變質之波長之光之雷射即可。 The second separation layer 14 may also be degraded by absorption of light irradiated from the laser. That is, the light that is irradiated to the second separation layer 14 in order to deteriorate the second separation layer 14 may be a self-laser irradiator. Examples of the laser that emits light that is irradiated to the second separation layer 14 are a solid laser such as a YAG laser, a ruby laser, a glass laser, a YVO 4 laser, an LD laser, or a fiber laser, and a pigment laser. Such as liquid laser, CO 2 laser, excimer laser, Ar laser, He-Ne laser and other gas lasers, semiconductor lasers, free electron laser and other laser light, or non-laser light. The laser light that emits the light irradiated to the second separation layer 14 may be appropriately selected depending on the material constituting the second separation layer 14, as long as the laser of the wavelength of the light constituting the second separation layer 14 is irradiated.

(氟碳) (fluorocarbon)

第二分離層14亦可由氟碳構成。第二分離層14係藉由氟碳構成,且因吸收光而變質,結果,喪失了接受光照射前之強度或接著性。因此,藉由接受少許外力(例如, 將支撐板12拉起等)即可被破壞第二分離層14,可使支撐板12與基板11輕易地分離。 The second separation layer 14 may also be composed of fluorocarbon. The second separation layer 14 is made of fluorocarbon and is deteriorated by absorption of light, and as a result, the strength or adhesion before receiving light irradiation is lost. Therefore, by accepting a little external force (for example, The second separation layer 14 can be broken by pulling the support plate 12 up, etc., so that the support plate 12 and the substrate 11 can be easily separated.

另外,若就其一觀點而言,構成第二分離層 14之氟碳可利用電漿CVD法較好地成膜。又,氟碳包含CxFy(全氟碳)及CxHyFz(x、y及z為整數),但並不限於該等,可有例如CHF3、CH2F2、C2H2F2、C4F8、C2F6、C5F8等。且,對於用以構成第二分離層14之氟碳,亦可視需要添加氮、氦、氬等惰性氣體、烷、烯等烴、及氧、二氧化碳、氫。又,亦可複數種混合該等氣體而使用(氟碳、氫、氮之混合氣體等)。且,第二分離層14可由單一種氟碳構成,亦可由兩種以上之氟碳構成。 Further, from the viewpoint of the above, the fluorocarbon constituting the second separation layer 14 can be preferably formed into a film by a plasma CVD method. Further, the fluorocarbon includes C x F y (perfluorocarbon) and C x H y F z (x, y, and z are integers), but is not limited thereto, and may be, for example, CHF 3 , CH 2 F 2 , or C. 2 H 2 F 2 , C 4 F 8 , C 2 F 6 , C 5 F 8 and the like. Further, as the fluorocarbon for constituting the second separation layer 14, an inert gas such as nitrogen, helium or argon, a hydrocarbon such as an alkene or an olefin, or oxygen, carbon dioxide or hydrogen may be added as needed. Further, a plurality of such gases may be mixed and used (a mixed gas of fluorocarbon, hydrogen, and nitrogen). Further, the second separation layer 14 may be composed of a single fluorocarbon or two or more fluorocarbons.

氟碳隨著其種類而吸收具有固有範圍之波長 之光。藉由對第二分離層照射第二分離層14中使用之氟碳所吸收範圍之波長之光,可使氟碳較好地變質。又,第二分離層14中之光之吸收率較好為80%以上。 Fluorocarbon absorbs wavelengths with an intrinsic range with its type Light. The fluorocarbon can be preferably deteriorated by irradiating the second separation layer with light of a wavelength in the range of absorption of the fluorocarbon used in the second separation layer 14. Further, the light absorption rate in the second separation layer 14 is preferably 80% or more.

作為照射於第二分離層14之光,只要對應於 氟碳可吸收之波長,而適當使用例如由YAG雷射、紅寶石雷射、玻璃雷射、YVO4雷射、LD雷射、光纖雷射等固態雷射,色素雷射等液態雷射,CO2雷射、準分子雷射、Ar雷射、He-Ne雷射等氣體雷射、半導體雷射、自由電子雷射等雷射光,或非雷射光即可。可使氟碳變質之波長並不限於此,可使用例如600nm以下之範圍者。 As the light irradiated to the second separation layer 14, as long as it corresponds to the wavelength at which fluorocarbon can be absorbed, for example, a YAG laser, a ruby laser, a glass laser, a YVO 4 laser, an LD laser, a fiber laser is suitably used. Liquid lasers such as solid-state lasers, pigment lasers, CO 2 lasers, excimer lasers, Ar lasers, He-Ne lasers, gas lasers, semiconductor lasers, free electron lasers, etc., or Non-laser light can be. The wavelength at which the fluorocarbon can be deteriorated is not limited thereto, and for example, a range of 600 nm or less can be used.

(其重複單位中含具有光吸收性之構造之聚合物) (polymers having a light absorbing structure in a repeating unit)

第二分離層14亦可含有其重複單位中含具有光吸收性之構造之聚合物。該聚合物接受光之照射而變質。該聚合物之變質係藉由上述構造吸收所照射之光而產生。第二分離層14之聚合物變質之結果為喪失接受光照射前之強度或接著性。因此,藉由施加少許的外力(例如拉起支撐板12等)即可使第二分離層14被破壞,而輕易地分離支撐板12與基板11。 The second separation layer 14 may also contain a polymer having a structure having light absorbability in its repeating unit. The polymer is degraded by exposure to light. The deterioration of the polymer is produced by absorbing the irradiated light by the above configuration. As a result of the deterioration of the polymer of the second separation layer 14, the strength or adhesion before the light irradiation is lost. Therefore, the second separation layer 14 can be broken by applying a small external force (for example, pulling up the support plate 12, etc.), and the support plate 12 and the substrate 11 can be easily separated.

具有光吸收性之上述構造係吸收光而使含有作為重複單位之該構造之聚合物變質之化學構造。該構造係由例如經取代或未經取代之苯環、縮合環或雜環所成之含有共軛π電子系之原子團。更詳言之,該構造可為卡多構造、或存在於上述聚合物側鏈上之二苯甲酮構造、二苯基亞碸構造、二苯基碸構造(雙苯基碸構造)、二苯基構造或二苯基胺構造。 The above structure having light absorptivity absorbs light and chemically changes the polymer containing the structure as a repeating unit. The structure is an atomic group containing a conjugated π-electron system formed, for example, by a substituted or unsubstituted benzene ring, a condensed ring or a heterocyclic ring. More specifically, the structure may be a cardo structure, or a benzophenone structure present on the side chain of the above polymer, a diphenylarylene structure, a diphenylanthracene structure (diphenylanthracene structure), two Phenyl structure or diphenylamine structure.

上述構造存在於上述聚合物之側鏈時,該構造可藉以下之式表示。 When the above structure exists in the side chain of the above polymer, the structure can be represented by the following formula.

(式中,R各獨立為烷基、芳基、鹵素、羥 基、酮基、亞碸基、碸基或N(R1)(R2)(此處,R1及R2各獨立為氫原子或碳數1~5之烷基),Z可不存在,或為CO-、-SO2-、-SO-或-NH-,n為0或1~5之整數)。 (wherein R is each independently alkyl, aryl, halogen, hydroxy, keto, fluorenylene, fluorenyl or N(R 1 )(R 2 ) (here, R 1 and R 2 are each independently hydrogen Atom or an alkyl group having 1 to 5 carbon atoms, Z may be absent, or is CO-, -SO 2 -, -SO- or -NH-, and n is 0 or an integer of 1 to 5).

且,上述聚合物包含例如以下之式中,由(a)~(d)之任一者表示之重複單位,或以(e)表示、或於其主鏈中含有(f)之構造。 Further, the polymer includes, for example, a repeating unit represented by any one of (a) to (d), or a structure represented by (e) or containing (f) in its main chain.

(式中,l為1以上之整數,m為0或1~2之整數,X於(a)~(e)中為上述之“化2”所示之式之任一者,於(f)中為上述“化2”所示之式之任一種,或不存在,Y1及Y2各獨立為-CO-或SO2-,l較好為10以下之整數)。 (wherein l is an integer of 1 or more, m is an integer of 0 or 1 to 2, and X is any one of the formulas shown in the above-mentioned "Chemical 2" in (a) to (e), Any one of the formulas represented by the above "Chemical 2", or absent, Y 1 and Y 2 are each independently -CO- or SO 2 -, and l is preferably an integer of 10 or less).

上述之“化2”所示之苯環、縮合環及雜環之例列舉為 例如苯基、經取代苯基、苄基、經取代苄基、萘、經取代萘、蒽、經取代蒽、蒽醌、經取代蒽醌、吖啶、經取代吖啶、偶氮苯、經取代偶氮苯、螢光胺(fluorime)、經取代螢光胺、fluorimon、經取代fluorimon、咔唑、經取代咔唑、N-烷基咔唑、二苯并呋喃、經取代二苯并呋喃、菲、經取代菲、芘及經取代芘。例示之取代基進一步具有取代時,其取代基係選自例如烷基、芳基、鹵素原子、烷氧基、硝基、醛、氰基、醯胺、二烷基胺基、磺醯胺、醯亞胺、羧酸、羧酸酯、磺酸、磺酸酯、烷基胺基及芳基胺基。 Examples of the benzene ring, the condensed ring and the heterocyclic ring represented by the above "Chemical 2" are listed as For example, phenyl, substituted phenyl, benzyl, substituted benzyl, naphthalene, substituted naphthalene, anthracene, substituted hydrazine, hydrazine, substituted hydrazine, acridine, substituted acridine, azobenzene, Substituted azobenzene, fluorime, substituted fluorescamine, fluorimon, substituted fluorimon, carbazole, substituted carbazole, N-alkylcarbazole, dibenzofuran, substituted dibenzofuran , Philippine, substituted phenanthrene, anthracene and substituted 芘. When the exemplified substituent further has a substitution, the substituent is selected from, for example, an alkyl group, an aryl group, a halogen atom, an alkoxy group, a nitro group, an aldehyde group, a cyano group, a decylamine group, a dialkylamino group, a sulfonamide, An imine, a carboxylic acid, a carboxylic acid ester, a sulfonic acid, a sulfonate, an alkylamino group, and an arylamine group.

上述之“化2”所示之取代基中,作為具有兩個 苯基之第5個取代基,且Z為-SO2-時之例列舉為雙(2,4-二羥基苯基)碸、雙(3,4-二羥基苯基)碸、雙(3,5-二羥基苯基)碸、雙(3,6-二羥基苯基)碸、雙(4-羥基苯基)碸、雙(3-羥基苯基)碸、雙(2-羥基苯基)碸、及雙(3,5-二甲基-4-羥基苯基)碸等。 In the substituent represented by the above "Chemical 2", as the fifth substituent having two phenyl groups, and Z is -SO 2 -, exemplified by bis(2,4-dihydroxyphenyl)fluorene , bis(3,4-dihydroxyphenyl)fluorene, bis(3,5-dihydroxyphenyl)fluorene, bis(3,6-dihydroxyphenyl)fluorene, bis(4-hydroxyphenyl)fluorene, Bis(3-hydroxyphenyl)fluorene, bis(2-hydroxyphenyl)fluorene, and bis(3,5-dimethyl-4-hydroxyphenyl)hydrazine.

上述之“化2”所示之取代基中,作為具有兩個 苯基之第5個取代基且Z為-SO-時之例列舉為雙(2,3-二羥基苯基)亞碸、雙(5-氯-2,3-二羥基苯基)亞碸、雙(2,4-二羥基苯基)亞碸、雙(2,4-二羥基-6-甲基苯基)亞碸、雙(5-氯-2,4-二羥基苯基)亞碸、雙(2,5-二羥基苯基)亞碸、雙(3,4-二羥基苯基)亞碸、雙(3,5-二羥基苯基)亞碸、雙(2,3,4-三羥基苯基)亞碸、雙(2,3,4-三羥基-6-甲基苯基)-亞碸、雙(5-氯-2,3,4-三羥基苯 基)亞碸、雙(2,4,6-三羥基苯基)亞碸、及雙(5-氯-2,4,6-三羥基苯基)亞碸等。 Among the substituents shown in the above "Chemical 2", as having two The fifth substituent of the phenyl group and the case where Z is -SO- are exemplified by bis(2,3-dihydroxyphenyl)anthracene and bis(5-chloro-2,3-dihydroxyphenyl)arene. , bis(2,4-dihydroxyphenyl)arylene, bis(2,4-dihydroxy-6-methylphenyl)anthracene, bis(5-chloro-2,4-dihydroxyphenyl) Anthraquinone, bis(2,5-dihydroxyphenyl)arylene, bis(3,4-dihydroxyphenyl)anthracene, bis(3,5-dihydroxyphenyl)anthracene, bis(2,3, 4-trihydroxyphenyl)arylene, bis(2,3,4-trihydroxy-6-methylphenyl)-arylene, bis(5-chloro-2,3,4-trihydroxybenzene Amidino, bis(2,4,6-trihydroxyphenyl)arylene, and bis(5-chloro-2,4,6-trihydroxyphenyl) anthracene.

上述之“化2”所示之取代基中,作為具有兩個 苯基之第5個取代基,且Z為-C(=O)-時之例,列舉為2,4-二羥基二苯甲酮、2,3,4-三羥基二苯甲酮、2,2’,4,4’-四羥基二苯甲酮、2,2',5,6'-四羥基二苯甲酮、2-羥基-4-甲氧基二苯甲酮、2-羥基-4-辛氧基二苯甲酮、2-羥基-4-十二烷氧基二苯甲酮、2,2’-二羥基-4-甲氧基二苯甲酮、2,6-二羥基-4-甲氧基二苯甲酮、2,2’-二羥基-4,4’-二甲氧基二苯甲酮、4-胺基-2’-羥基二苯甲酮、4-二甲胺基-2’-羥基二苯甲酮、4-二乙胺基-2’-羥基二苯甲酮、4-二甲胺基-4’-甲氧基-2’-羥基二苯甲酮、4-二甲胺基-2’,4’-二羥基二苯甲酮、及4-二甲胺基-3’,4’-二羥基二苯甲酮等。 Among the substituents shown in the above "Chemical 2", as having two The fifth substituent of the phenyl group, and the case where Z is -C(=O)-, is exemplified by 2,4-dihydroxybenzophenone, 2,3,4-trihydroxybenzophenone, 2 , 2',4,4'-tetrahydroxybenzophenone, 2,2',5,6'-tetrahydroxybenzophenone, 2-hydroxy-4-methoxybenzophenone, 2-hydroxyl 4-octyloxybenzophenone, 2-hydroxy-4-dodecyloxybenzophenone, 2,2'-dihydroxy-4-methoxybenzophenone, 2,6-di Hydroxy-4-methoxybenzophenone, 2,2'-dihydroxy-4,4'-dimethoxybenzophenone, 4-amino-2'-hydroxybenzophenone, 4- Dimethylamino-2'-hydroxybenzophenone, 4-diethylamino-2'-hydroxybenzophenone, 4-dimethylamino-4'-methoxy-2'-hydroxydiphenyl Methyl ketone, 4-dimethylamino-2', 4'-dihydroxybenzophenone, and 4-dimethylamino-3',4'-dihydroxybenzophenone, and the like.

上述構造存在於上述聚合物之側鏈時,含上 述構造之重複單位於上述聚合物中所佔之比例係使第二分離層14之光透過率成為0.001%以上、10%以下之範圍內。若以使該比例侷限在該範圍內之方式調製聚合物,則第二分離層14可充分吸收光而能確實且迅速地變質。亦即,可輕易地自層合體20去除支撐板12,且可縮短該去除之必要之光照射時間。 When the above structure is present in the side chain of the above polymer, The ratio of the repeating unit of the structure to the above polymer is such that the light transmittance of the second separation layer 14 is in the range of 0.001% or more and 10% or less. When the polymer is prepared so that the ratio is limited to the range, the second separation layer 14 can sufficiently absorb light and can be deteriorated reliably and rapidly. That is, the support plate 12 can be easily removed from the laminate 20, and the necessary light irradiation time for the removal can be shortened.

上述構造依據其種類之選擇可吸收具有期望 範圍之波長之光。例如,上述構造可吸收之光之波長更好為100nm以上且2000nm以下之範圍內。該範圍中,上述構造可吸收之光之波長為更短波長側,例如100nm以上 且500nm以下之範圍內。例如,上述構造可較好藉由吸收具有約300nm以上且370nm以下之範圍內之波長之紫外光,而使包含該構造之聚合物變質。 The above structure can be absorbed according to the choice of its kind. The wavelength of the light. For example, the wavelength of the light absorbable by the above configuration is more preferably in the range of 100 nm or more and 2000 nm or less. In this range, the wavelength of the light absorbable by the above structure is a shorter wavelength side, for example, 100 nm or more. And within the range of 500 nm or less. For example, the above configuration can preferably deteriorate the polymer containing the structure by absorbing ultraviolet light having a wavelength in the range of about 300 nm or more and 370 nm or less.

上述構造可吸收之光為自例如高壓水銀燈( 波長:254nm以上且436nm以下)、KrF準分子雷射(波長:248nm)、ArF準分子雷射(波長:193nm)、F2準分子雷射(波長:157nm)、XeCl雷射(波長:308nm)、XeF雷射(波長:351nm)或者固態UV雷射(波長:355nm)發出之光,或為g線(波長:436nm)、h線(波長:405nm)或i線(波長:365nm)等。 The above-mentioned configuration absorbs light from, for example, a high pressure mercury lamp ( Wavelength: 254 nm or more and 436 nm or less), KrF excimer laser (wavelength: 248 nm), ArF excimer laser (wavelength: 193 nm), F2 excimer laser (wavelength: 157 nm), XeCl laser (wavelength: 308 nm) XeF laser (wavelength: 351 nm) or solid-state UV laser (wavelength: 355 nm), or g line (wavelength: 436 nm), h line (wavelength: 405 nm) or i line (wavelength: 365 nm).

上述第二分離層14含有包含上述構造作為重 複單位之聚合物,但第二分離層14可進而含有上述聚合物以外之成分。作為該成分列舉為填料、可塑劑、及可提高支撐板12之剝離性之成分等。該等成分係自不妨礙藉由上述構造之光吸收、及聚合物之變質或可促進該吸收及變質之過去習知物質或材料適當選擇。 The second separation layer 14 described above contains the above structure as a heavy The polymer of the complex unit, but the second separation layer 14 may further contain components other than the above polymers. The component is exemplified by a filler, a plasticizer, and a component which can improve the peelability of the support plate 12. These components are suitably selected from conventional materials or materials which do not interfere with the absorption of light by the above-described structure, and the deterioration of the polymer or which promote the absorption and deterioration.

(無機物) (inorganic matter)

第二分離層14亦可由無機物構成。第二分離層14藉由以無機物構成,而可藉由吸收光而變質,結果,喪失接受光照射前之強度或接著性。因此,藉由施加少許外力(例如,將支撐板12拉起等),即可破壞第二分離層14,可使支撐板12與基板11輕易的分離。 The second separation layer 14 may also be composed of an inorganic material. The second separation layer 14 is made of an inorganic substance and can be deteriorated by absorbing light, and as a result, the strength or adhesion before receiving light irradiation is lost. Therefore, by applying a little external force (for example, pulling up the support plate 12, etc.), the second separation layer 14 can be broken, and the support plate 12 can be easily separated from the substrate 11.

上述無機物只要為藉由吸收光而變質之構成 即可,例如可適當地使用由金屬、金屬化合物及碳所組成之群選出之一種以上之無機物。所謂金屬化合物意指含金屬原子之化合物,例如,可為金屬氧化物、金屬氮化物。作為該無機物之例示並無限定,但可列舉為例如由金、銀、銅、鐵、鎳、鋁、鈦、鉻、SiO2、SiN、Si3N4、TiN、及碳所組成之群選出之一種以上之無機物。又,所謂碳亦為可包含碳之同位素之概念,例如可為鑽石、富勒烯、類鑽石碳、碳奈米管等。 The inorganic material may be formed by absorbing light, and for example, one or more inorganic substances selected from the group consisting of a metal, a metal compound, and carbon may be suitably used. The metal compound means a compound containing a metal atom, and for example, it may be a metal oxide or a metal nitride. The inorganic material is not limited, and may be, for example, selected from the group consisting of gold, silver, copper, iron, nickel, aluminum, titanium, chromium, SiO 2 , SiN, Si 3 N 4 , TiN, and carbon. One or more inorganic substances. Further, carbon is also a concept that may include carbon isotopes, and may be, for example, diamond, fullerene, diamond-like carbon, carbon nanotubes, or the like.

上述無機物係依據其種類而吸收具有固有範圍之波長之光。藉由使第二分離層14中使用之無機物所吸收之範圍的波長光照射至第二分離層,可使上述無機物適當變質。 The above inorganic substance absorbs light having a wavelength of an intrinsic range depending on the kind thereof. By irradiating the second separation layer with wavelength light of a range absorbed by the inorganic substance used in the second separation layer 14, the inorganic substance can be appropriately deteriorated.

作為對由無機物所成之第二分離層14照射之光,只要對應於上述無機物可吸收之波長,適當使用例如由YAG雷射、紅寶石雷射、玻璃雷射、YVO4雷射、LD雷射、光纖雷射等固態雷射,色素雷射等液態雷射,CO2雷射、準分子雷射、Ar雷射、He-Ne雷射等氣體雷射、半導體雷射、自由電子雷射等雷射光,或非雷射光即可。 As the light to be irradiated to the second separation layer 14 made of an inorganic material, as long as it corresponds to the wavelength at which the inorganic substance can absorb, for example, a YAG laser, a ruby laser, a glass laser, a YVO 4 laser, or an LD laser is suitably used. Solid-state lasers such as fiber lasers, liquid lasers such as pigment lasers, CO 2 lasers, excimer lasers, Ar lasers, He-Ne lasers, gas lasers, semiconductor lasers, free electron lasers, etc. Laser light, or non-laser light.

由無機物所成之第二分離層14可藉由例如濺鍍、化學蒸鍍(CVD)、電鍍、電漿CVD、旋轉塗佈等習知技術,於支撐板12上形成。由無機物所成之第二分離層14之厚度並無特別限制,只要是可充分吸收使用之光之膜厚即可,但更好為例如0.05μm以上、10μm以下之範圍內之膜厚。又,亦可預先於由構成第二分離層14之 無機物所成之無機膜(例如,金屬膜)之兩面或單面上塗佈接著劑,並貼合於支撐板12及基板11上。 The second separation layer 14 made of an inorganic material can be formed on the support plate 12 by a conventional technique such as sputtering, chemical vapor deposition (CVD), electroplating, plasma CVD, or spin coating. The thickness of the second separation layer 14 made of an inorganic material is not particularly limited as long as it is sufficient to sufficiently absorb the film thickness of the light to be used, but is preferably a film thickness in the range of, for example, 0.05 μm or more and 10 μm or less. Moreover, the second separation layer 14 may be formed in advance. An adhesive is applied to both surfaces or one surface of an inorganic film (for example, a metal film) made of an inorganic material, and is bonded to the support plate 12 and the substrate 11.

又,使用金屬膜作為第二分離層14時,依據第二分離層14之膜質、雷射光源之種類、雷射輸出等條件,能引發雷射之反射或使膜帶電等。因此,較好藉由將抗反射膜或抗靜電膜設置於第二分離層14之上下或其一面上,而實現該等之對策。 Further, when a metal film is used as the second separation layer 14, depending on the film quality of the second separation layer 14, the type of the laser light source, and the laser output, it is possible to cause reflection of the laser or charge the film. Therefore, it is preferable to provide such countermeasures by providing the antireflection film or the antistatic film on the upper or lower side of the second separation layer 14 or on one side thereof.

(具有紅外線吸收性之構造之化合物) (a compound having an infrared absorbing structure)

第二分離層14亦可藉由具有紅外線吸收性之構造之化合物形成。該化合物係藉由吸收紅外線而變質。第二分離層14於作為化合物變質之結果,喪失接受紅外線照射前之強度或接著性。因此,藉由施加少許外力(例如,將支撐體拉起等)即可破壞第二分離層14,可使支撐板12與基板11輕易的分離。 The second separation layer 14 can also be formed by a compound having an infrared absorbing structure. This compound is degraded by absorption of infrared rays. The second separation layer 14 loses strength or adhesion before receiving infrared radiation as a result of deterioration of the compound. Therefore, the second separation layer 14 can be broken by applying a small external force (for example, pulling up the support body, etc.), and the support plate 12 can be easily separated from the substrate 11.

作為具有紅外線吸收性之構造或包含具有紅外線吸收性之構造之化合物可為例如烷、烯(乙烯基、反式、順式、亞乙烯、三取代、四取代、共軛、累積多烯(cumulene)、環式)、炔(單取代、二取代)、單環式芳香族(苯、單取代、二取代、三取代)、醇及酚類(自由OH、分子內氫鍵、分子間氫鍵、飽和二級、飽和三級、不飽和二級、不飽和三級)、乙縮醛、縮酮、脂肪族醚、芳香族醚、乙烯基醚、環氧乙烷環醚、過氧化物醚、酮類、二烷基羰基、芳香族羰基、1,3-二酮之烯醇、鄰-羥 基芳基酮、二烷基醛、芳香族醛、碳酸(二聚物、碳酸陰離子)、甲酸酯、乙酸酯、共軛酯、非共軛酯、芳香族酯、內酯(β-、γ-、δ-)、脂肪族鹽酸鹽、芳香族鹽酸鹽、酸酐(共軛、非共軛、環式、非環式)、一級醯胺、二級醯胺、內醯胺、一級胺(脂肪族、芳香族)、二級胺(脂肪族、芳香族)、三級胺(脂肪族、芳香族)、一級胺鹽、二級胺鹽、三級胺鹽、銨離子、脂肪族腈、芳香族腈、羧醯亞胺、脂肪族異腈、芳香族異腈、異氰酸酯、硫代氰酸酯、脂肪族異硫代氰酸酯、芳香族異硫代氰酸酯、脂肪族硝基化合物、芳香族硝基化合物、硝基胺、亞硝基胺、硝酸酯、亞硝酸酯、亞硝基鍵(脂肪族、芳香族、單體、二聚物)、硫醇及噻吩以及硫醇酸等硫化合物,硫代羰基、亞碸、碸、磺醯氯、一級磺醯胺、二級磺醯胺、硫酸酯、碳-鹵素鍵、Si-A1鍵(A1為H、C、O或鹵素)、P-A2鍵(A2為H、C或O)、或Ti-O鍵。 The compound having a structure having infrared absorbing property or a structure containing infrared absorbing property may be, for example, an alkane, an ene (vinyl, trans, cis, vinylidene, trisubstituted, tetrasubstituted, conjugated, cumulative polyene (cumulene) ), cyclic formula, alkyne (monosubstituted, disubstituted), monocyclic aromatic (benzene, monosubstituted, disubstituted, trisubstituted), alcohols and phenols (free OH, intramolecular hydrogen bonds, intermolecular hydrogen bonds) , saturated secondary, saturated tertiary, unsaturated secondary, unsaturated tertiary), acetal, ketal, aliphatic ether, aromatic ether, vinyl ether, oxirane cyclic ether, peroxide ether , ketones, dialkylcarbonyls, aromatic carbonyls, enols of 1,3-diketones, o-hydroxyaryl ketones, dialkyl aldehydes, aromatic aldehydes, carbonic acid (dimers, carbonate anions), Acid esters, acetates, conjugated esters, non-conjugated esters, aromatic esters, lactones (β-, γ-, δ-), aliphatic hydrochlorides, aromatic hydrochlorides, anhydrides (conjugated, Non-conjugated, cyclic, acyclic), primary guanamine, secondary guanamine, indoleamine, primary amine (aliphatic, aromatic), secondary amine (aliphatic, aromatic) Tertiary amine (aliphatic, aromatic), primary amine salt, secondary amine salt, tertiary amine salt, ammonium ion, aliphatic nitrile, aromatic nitrile, carboxy quinone imine, aliphatic isonitrile, aromatic isonitrile , isocyanate, thiocyanate, aliphatic isothiocyanate, aromatic isothiocyanate, aliphatic nitro compound, aromatic nitro compound, nitroamine, nitrosamine, nitrate , nitrite, nitroso bond (aliphatic, aromatic, monomeric, dimer), thiol and thiophene and sulfur compounds such as thiol, thiocarbonyl, hydrazine, hydrazine, sulfonium chloride, first grade Sulfonamide, secondary sulfonamide, sulfate, carbon-halogen bond, Si-A 1 bond (A 1 is H, C, O or halogen), PA 2 bond (A 2 is H, C or O), Or Ti-O bond.

作為包含上述碳-鹵素鍵之構造列舉為例如 -CH2Cl、-CH2Br、-CH2I、-CF2-、-CF3、-CH=CF2、-CF=CF2、氟化芳基、及氯化芳基等。 The structure including the above carbon-halogen bond is exemplified by, for example, -CH 2 Cl, -CH 2 Br, -CH 2 I, -CF 2 -, -CF 3 , -CH=CF 2 , -CF=CF 2 , fluorination. An aryl group, an aryl chloride group, and the like.

作為上述含Si-A1鍵之構造列舉為SiH、 SiH2、SiH3、Si-CH3、Si-CH2-、Si-C6H5、SiO-脂肪族、Si-OCH3、Si-OCH2CH3、Si-OC6H5、Si-O-Si、Si-OH、SiF、SiF2、及SiF3等。含Si-A1鍵之構造最好為形成矽氧烷骨架及倍半矽氧烷骨架。 The structure containing the Si—Al 1 bond is exemplified by SiH, SiH 2 , SiH 3 , Si—CH 3 , Si—CH 2 —, Si—C 6 H 5 , SiO—aliphatic, Si—OCH 3 , Si—. OCH 2 CH 3 , Si-OC 6 H 5 , Si-O-Si, Si-OH, SiF, SiF 2 , and SiF 3 , and the like. The structure containing the Si-A 1 bond is preferably a naphthene skeleton and a sesquiterpene skeleton.

作為含上述P-A2鍵之構造列舉為PH、PH2、 P-CH3、P-CH2-、P-C6H5、A3 3-P-O(A3為脂肪族或芳香族)、(A4O)3-P-O(A4為烷基)、P-OCH3、P-OCH2CH3、P-OC6H5、P-O-P、P-OH、及O=P-OH等。 The structure containing the above PA 2 bond is exemplified by PH, PH 2 , P-CH 3 , P-CH 2 -, PC 6 H 5 , A 3 3 -PO (A 3 is aliphatic or aromatic), (A 4 O) 3- PO (A 4 is an alkyl group), P-OCH 3 , P-OCH 2 CH 3 , P-OC 6 H 5 , POP, P-OH, and O=P-OH.

上述構造可依據其種類之選擇而吸收具有期 望範圍之波長之紅外線。具體而言,上述構造可吸收之紅外線之波長為例如1μm以上、20μm以下之範圍內,在2μm以上、15μm以下之範圍內可更好地吸收。另外,上述構造為Si-O鍵、Si-C鍵及Ti-O鍵時,可為9μm以上、11μm以下之範圍內。又,若為本技藝者則可輕易地了解各構造可吸收之紅外線之波長。例如,各構造中之吸收帶可參照非專利文獻:SILVERSTEIN.BASSLER.MORRILL著「利用有機化合物光譜之鑑定法(第5版)-MS、IR、NMR、UV併用-」(1992年發行)第146頁~第151頁之記載。 The above structure can be absorbed according to the choice of its kind The infrared wavelength of the wavelength of the range. Specifically, the wavelength of the infrared ray absorbable by the above structure is, for example, in the range of 1 μm or more and 20 μm or less, and can be better absorbed in the range of 2 μm or more and 15 μm or less. Further, when the above structure is a Si—O bond, a Si—C bond, and a Ti—O bond, it may be in the range of 9 μm or more and 11 μm or less. Moreover, the wavelength of the infrared light absorbable by each structure can be easily understood by those skilled in the art. For example, the absorption band in each configuration can be referred to the non-patent literature: SILVERSTEIN. BASSLER. MORRILL, "Identification of Organic Compound Spectra (5th Edition) - MS, IR, NMR, and UV -" (published in 1992), pp. 146 - 151.

第二分離層14之形成所用之具有紅外線吸收 性之構造之化合物只要是具有如上述構造之化合物中,可溶解於用以塗佈之溶劑且可形成固化之固體層者即無特別限制。然而,就使第二分離層14中之化合物有效地變質,使支撐板12與基板11之分離容易而言,較好使第二分離層14中之紅外線之吸收變大,亦即對第二分離層14照射紅外線時之紅外線透過率低。具體而言,較好第二分離層14中之紅外線透過率低於90%,更好紅外線透過率低於80%。 The second separation layer 14 is formed by infrared absorption The compound having a structure as described above is not particularly limited as long as it is a compound having the above-described structure, and is soluble in a solvent to be coated and can form a solid layer to be cured. However, in order to effectively deteriorate the compound in the second separation layer 14 and to facilitate separation of the support plate 12 from the substrate 11, it is preferred to increase the absorption of infrared rays in the second separation layer 14, that is, to the second. When the separation layer 14 is irradiated with infrared rays, the infrared transmittance is low. Specifically, it is preferred that the infrared transmittance in the second separation layer 14 is less than 90%, and the infrared transmittance is better than 80%.

若列舉一例說明,則作為具有矽氧烷骨架之 化合物,可使用例如以下述化學式(3)表示之重複單位及以下述化學式(4)表示之重複單位之共聚物之樹脂,或以下述化學式(3)表示之重複單位及源自丙烯酸系化合物之重複單位之共聚物的樹脂。 If an example is given, it has a naphthenic skeleton. As the compound, for example, a resin of a repeating unit represented by the following chemical formula (3) and a copolymer of a repeating unit represented by the following chemical formula (4), or a repeating unit represented by the following chemical formula (3) and an acrylic compound-based compound can be used. The resin of the copolymer of the repeating unit.

(化學式(4)中,R3為氫、碳數10以下之烷基、或碳數10以下之烷氧基)。 (In the chemical formula (4), R 3 is hydrogen, an alkyl group having 10 or less carbon atoms, or an alkoxy group having 10 or less carbon atoms).

其中,作為具有矽氧烷骨架之化合物更好為以上述化學式(3)表示之重複單位及以下述化學式(5)表示之重複單位之共聚物之第三丁基苯乙烯(TBST)-二甲基矽氧烷共聚物,又更好為以1;1包含以上述式(3)表示之重複單位及以下述化學式(5)表示之重複單位之TBST-二甲基矽氧烷共聚物。 Among them, the compound having a oxoxane skeleton is preferably a copolymer of a repeating unit represented by the above formula (3) and a copolymer of a repeating unit represented by the following chemical formula (5): tert-butylstyrene (TBST)-dimethyl Further, the oxyalkylene copolymer further preferably comprises a TBST-dimethyloxane copolymer having a repeating unit represented by the above formula (3) and a repeating unit represented by the following chemical formula (5) in a range of 1;

又,具有倍半矽氧烷骨架之化合物可使用例 如以下述化學式(6)表示之重複單位及以下述化學式(7)表示之重複單位之共聚物的樹脂。 Further, a compound having a sesquiterpene oxide skeleton can be used as an example A resin which is a copolymer of a repeating unit represented by the following chemical formula (6) and a repeating unit represented by the following chemical formula (7).

(化學式(6)中,R4為氫或碳數1以上、10 以下之烷基,化學式(7)中,R5為碳數1以上、10以下之烷基,或苯基)。 (In the chemical formula (6), R 4 is hydrogen or an alkyl group having 1 or more and 10 or less carbon atoms, and in the chemical formula (7), R 5 is an alkyl group having 1 or more and 10 or less carbon atoms or a phenyl group).

具有倍半矽氧烷骨架之化合物,除此之外,亦可適當地使用日本特開2007-258663號公報(2007年10月4日公開)、日本特開2010-120901號公報(2010年6月3日公開)、日本特開2009-263316號公報(2009年11月12日公開)及日本特開2009-263596號公報(2009年11月12日公開)中揭示之各種倍半矽氧烷樹脂。 In addition to the compound having a sesquioxane skeleton, it is also possible to use, as appropriate, JP-A-2007-258663 (published on October 4, 2007), and JP-A-2010-120901 (2010) Various sesquiterpene oxides disclosed in Japanese Laid-Open Patent Publication No. 2009-263316 (published on Nov. 12, 2009) and JP-A-2009-263596 (published on Nov. 12, 2009). Resin.

其中,作為具有倍半矽氧烷骨架之化合物更 好為以下述化學式(8)表示之重複單位及以下述化學式(9)表示之重複單位之共聚物,又更好以7:3含有以下述化學式(8)表示之重複單位及以下述化學式(9)表示之重複單位之共聚物。 Among them, as a compound having a sesquiterpene oxide skeleton The copolymer of the repeating unit represented by the following chemical formula (8) and the repeating unit represented by the following chemical formula (9), and more preferably 7:3, the repeating unit represented by the following chemical formula (8) and the following chemical formula ( 9) A copolymer representing the repeating unit.

作為具有倍半矽氧烷骨架之聚合物有無規構造、階梯構造及籠型構造,可為任何構造。 The polymer having a sesquiterpene skeleton has a random structure, a step structure, and a cage structure, and may have any structure.

又,作為含有Ti-O鍵之化合物列舉為例如(i)四-異丙氧化鈦、四-正丁氧化鈦、肆(2-乙基己氧基)鈦、及異丙氧化鈦辛二醇等烷氧基鈦,(ii)二-異丙氧基.雙(乙醯基丙酮基)鈦、及丙烷二氧基鈦雙(乙基乙醯基乙酸酯)等螯合鈦,(iii)i-C3H7O-[-Ti(O-i-C3H7)2-O-]n-i-C3H7、及n-C4H9O-[-Ti(O-n-C4H9)2-O-]n-n-C4H9等之鈦聚合物,(iv)三-正丁氧基鈦單硬脂酸酯、硬脂酸鈦、二異丙氧基鈦二異硬脂酸酯、及(2-正丁氧基羰基苯甲醯氧基)三丁氧化鈦等醯化鈦,(v)二正丁氧基.雙(三乙醇胺 酸)鈦等之水溶性鈦化合物等。 Further, examples of the compound containing a Ti-O bond are, for example, (i) tetra-isopropoxide titanium oxide, tetra-n-butyltin oxide, ruthenium (2-ethylhexyloxy) titanium, and isopropyl isobutyloxide octanediol. Isoalkoxide titanium, (ii) di-isopropoxy. Chelating titanium such as bis(ethylmercaptoacetone) titanium and propane dioxytitanium bis(ethylacetoxyacetate), (iii) iC 3 H 7 O-[-Ti(OiC 3 H 7 ) 2 -O-] n -iC 3 H 7 , and nC 4 H 9 O-[-Ti(OnC 4 H 9 ) 2 -O-] n -nC 4 H 9 etc. Titanium polymer, (iv) tri- N-butoxytitanium monostearate, titanium stearate, diisopropoxy titanium diisostearate, and (2-n-butoxycarbonylbenzylideneoxy) tributyl titanate Titanium, (v) di-n-butoxy. A water-soluble titanium compound such as bis(triethanolamine) titanium or the like.

其中,作為包含Ti-O鍵之化合物較好為二正丁氧基.雙(三乙醇胺酸)鈦(Ti(OC4H9)2[OC2H4N(C2H4OH)2]2)。 Among them, the compound containing a Ti-O bond is preferably a di-n-butoxy group. Bis(triethanolamine)titanium (Ti(OC 4 H 9 ) 2 [OC 2 H 4 N(C 2 H 4 OH) 2 ] 2 ).

上述第二分離層14含有具有紅外線吸收性之構造之化合物,但第二分離層14可進而含有上述化合物以外之成分。至於該成分列舉為填料、可塑劑、及可提高支撐板12之剝離性之成分等。該等成分可自不妨礙由上述構造之紅外線吸收及該化合物之變質、或促進該吸收及變質之過去習知物質或材料適當選擇。 The second separation layer 14 contains a compound having an infrared absorbing structure, but the second separation layer 14 may further contain components other than the above compounds. The component is exemplified by a filler, a plasticizer, and a component which can improve the peelability of the support plate 12. These components may be appropriately selected from conventional materials or materials which are not hindered by the infrared absorption of the above structure and the deterioration of the compound, or which promote the absorption and deterioration.

(紅外線吸收物質) (infrared absorbing material)

第二分離層14亦可含有紅外線吸收物質。第二分離層14藉由含有紅外線吸收物質而構成,而可藉由吸收光而變質,結果,喪失接受光照射前之強度或接著性。因此,可藉由施加少許外力(例如,將支撐板12拉起等)即可破壞第二分離層14,使支撐板12與基板11輕易的分離。 The second separation layer 14 may also contain an infrared absorbing material. The second separation layer 14 is composed of an infrared absorbing material, and can be deteriorated by absorbing light, and as a result, the strength or adhesion before receiving light irradiation is lost. Therefore, the second separation layer 14 can be broken by applying a small external force (for example, pulling up the support plate 12, etc.), and the support plate 12 and the substrate 11 can be easily separated.

紅外線吸收物質只要為藉由吸收紅外線而變質之構成即可,可較好地使用例如碳黑、鐵粒子或鋁粒子。紅外線吸收物質隨著其種類而吸收具有固有範圍之波長之光。藉由對第二分離層14照射第二分離層14中使用之紅外線吸收物質所吸收之範圍之波長的光,可使紅外線吸收物質較好地變質。 The infrared ray absorbing material may be configured to be deteriorated by absorbing infrared rays, and for example, carbon black, iron particles or aluminum particles can be preferably used. The infrared absorbing material absorbs light having a wavelength of an intrinsic range depending on its kind. The infrared absorbing material can be preferably deteriorated by irradiating the second separation layer 14 with light of a wavelength in a range absorbed by the infrared absorbing material used in the second separation layer 14.

(其他步驟) (other steps)

最後,如圖1之(6)所示,介隔設置於基板11上之接著層13、與設置於支撐板12上之第一分離層15而層合之方式貼合基板11與支撐板12(貼合步驟)。藉此,可製造具備第二分離層14與第一分離層15之層合體20。隨後,層合體20經歷基板11之薄化步驟,進行期望之處理。 Finally, as shown in FIG. 1 (6), the substrate 11 and the support plate 12 are bonded to each other by laminating the adhesive layer 13 provided on the substrate 11 and the first separation layer 15 provided on the support plate 12. (Fitting step). Thereby, the laminate 20 including the second separation layer 14 and the first separation layer 15 can be manufactured. Subsequently, the laminate 20 is subjected to a thinning step of the substrate 11 to perform the desired treatment.

〈層合體〉 Laminate

一實施形態之層合體係具備基板、支撐上述基板之光透過性之支撐體、及設置於上述基板與上述支撐體之間之藉由吸收透過上述支撐體所照射之光而變質之第一分離層之層合體,上述第一分離層係藉由使用含有具有不飽和鍵之有機化合物與氟化合物之反應氣體進行電漿處理而形成。 A lamination system according to an embodiment includes a substrate, a support for supporting light transmittance of the substrate, and a first separation which is provided between the substrate and the support and which is deteriorated by absorbing light irradiated through the support In the laminate of the layers, the first separation layer is formed by plasma treatment using a reaction gas containing an organic compound having an unsaturated bond and a fluorine compound.

依據上述構成,一實施形態之層合體具有可使層合之基板大型化之第一分離層。且,具備耐藥品性良好之第一分離層。 According to the above configuration, the laminate of one embodiment has the first separation layer which can increase the size of the laminated substrate. Further, it has a first separation layer having good chemical resistance.

又,本發明之層合體之製造方法亦進一步包含形成藉由吸收透過支撐體所照射之光而變質之第二分離層之第二分離層形成步驟。 Moreover, the method for producing a laminate of the present invention further includes a second separation layer forming step of forming a second separation layer which is deteriorated by absorbing light irradiated through the support.

另外,本發明之層合體亦可具備第二分離層。 Further, the laminate of the present invention may further comprise a second separation layer.

由上述構成,一實施形態之層合體係於支撐 體上形成第一分離層與第二分離層。此處,第一分離層具備各種藥品處理中之耐藥品性,第二分離層具備照射光後之良好分離性。例如,第二分離層上有第一分離層時,可利用第一分離層而防止第二分離層因藥品處理而變質。第一分離層上有第二分離層時,即使第二分離層因藥品處理而變質,仍可確保利用第一分離層作為分離層之功能。 又,由於可藉由透過支撐體對分離層照射光,可使分離層適當地變質,而可自層合體輕易地分離基板。 According to the above configuration, the lamination system of one embodiment is supported A first separation layer and a second separation layer are formed on the body. Here, the first separation layer is provided with chemical resistance in various drug treatments, and the second separation layer has good separability after irradiation with light. For example, when the first separation layer is present on the second separation layer, the first separation layer can be utilized to prevent the second separation layer from being deteriorated by the drug treatment. When the second separation layer is present on the first separation layer, even if the second separation layer is deteriorated by the drug treatment, the function of using the first separation layer as the separation layer can be ensured. Further, since the separation layer can be appropriately irradiated by irradiating light to the separation layer through the support, the substrate can be easily separated from the laminate.

基板、支撐體、第一分離層、第二分離層之 說明係依據上述之〈層合體之製造方法〉之項中進行之說明。又,於層合體上形成第一分離層與第二分離層兩者時,可為先於支撐體上形成第一分離層,且於該第一分離層上形成第二分離層之實施形態,亦可為先於支撐體上形成第二分離層,且於該第二分離層上形成第一分離層之實施形態。 Substrate, support body, first separation layer, second separation layer The description is based on the above-mentioned "manufacturing method of the laminate". Moreover, when both the first separation layer and the second separation layer are formed on the laminate, the first separation layer may be formed on the support, and the second separation layer may be formed on the first separation layer. It may also be an embodiment in which a second separation layer is formed on the support and a first separation layer is formed on the second separation layer.

使用圖3說明本發明之層合體一實施形態之 層合體20之構造。其係以圖1所示之本發明之層合體之製造方法之一實施形態所製造之層合體。 An embodiment of the laminate of the present invention will be described using FIG. 3. The construction of the laminate 20. This is a laminate produced by an embodiment of the method for producing a laminate of the present invention shown in Fig. 1.

如圖3所示,本發明之一實施形態之層合體 20具備基板11、支撐基板11之光透過性之支撐板(支撐體)12、及設置於基板11與支撐板12之間之藉由吸收透過支撐板12所照射之光而變質之第一分離層15,且第一分離層15係藉由使用含有具有不飽和鍵之有機化合物與 氟化合物之反應氣體來電漿處理而形成。 As shown in FIG. 3, a laminate of an embodiment of the present invention 20: a support plate (support) 12 having a light transmittance of the substrate 11 and the support substrate 11, and a first separation between the substrate 11 and the support plate 12 by absorbing the light irradiated through the support plate 12 Layer 15, and the first separation layer 15 is obtained by using an organic compound containing an unsaturated bond The reaction gas of the fluorine compound is formed by slurry treatment.

又,支撐板12上,於形成第一分離層15之 前,形成藉由吸收透過支撐板12所照射之光而分離之第二分離層14。 Moreover, on the support plate 12, the first separation layer 15 is formed Before, the second separation layer 14 separated by absorbing light irradiated through the support plate 12 is formed.

層合體20係以基板11、接著層13、第二分離層14、第一分離層15及支撐板12之順序層合而成。亦即,基板11係透過接著層13、第二分離層14及第一分離層15而支撐於支撐板12上。因此,以研削機將層合體20中之基板11研削至期望薄度時,可防止因過度應力使基板11破損。且,對於研削至期望薄度之基板11之表面藉由使用光阻可形成期望之電路元件。該等處理中,層合體20成為暴露於各種藥品中。 The laminate 20 is formed by laminating the substrate 11, the subsequent layer 13, the second separation layer 14, the first separation layer 15, and the support plate 12 in this order. That is, the substrate 11 is supported on the support plate 12 through the adhesive layer 13, the second separation layer 14, and the first separation layer 15. Therefore, when the substrate 11 in the laminate 20 is ground to a desired thickness by a grinding machine, it is possible to prevent the substrate 11 from being damaged due to excessive stress. Moreover, a desired circuit component can be formed by using a photoresist for the surface of the substrate 11 ground to a desired thinness. In these processes, the laminate 20 is exposed to various drugs.

如圖3所示,層合體20係於第二分離層14上形成第一分離層15。此處,由於第一分離層15係藉由使用含有具有不飽和鍵之有機化合物與氟化合物之反應氣體之電漿處理而形成,故耐藥品性良好。因此,於使用藥品進行期望之處理中,可藉第一分離層15保護第二分離層14免受藥品影響。據此,可防止第二分離層14因藥品而受侵害,且可防止該期望之處理期間支撐板12自層合體20分離。又,該期望之處理後,藉由透過支撐板12對第二分離層14及第一分離層15照射光,可使支撐板12自層合體20適當地分離。 As shown in FIG. 3, the laminate 20 is formed on the second separation layer 14 to form the first separation layer 15. Here, since the first separation layer 15 is formed by plasma treatment using a reaction gas containing an organic compound having an unsaturated bond and a fluorine compound, the chemical resistance is good. Therefore, in the desired treatment using the drug, the second separation layer 14 can be protected from the influence of the drug by the first separation layer 15. According to this, the second separation layer 14 can be prevented from being invaded by the medicine, and the separation of the support plate 12 from the laminate 20 during the desired treatment can be prevented. Further, after the desired treatment, the second separation layer 14 and the first separation layer 15 are irradiated with light through the support plate 12, whereby the support plate 12 can be appropriately separated from the laminate 20.

使用圖4說明本發明之層合體另一實施形態之層合體21之構造。圖4係說明本發明另一實施形態之 層合體21之概略示意圖。此處,層合體21係圖1所示之本發明之層合體之製造方法之一實施形態中,省略圖1之(3)~(4)之第二分離層形成步驟而製造之層合體。 The structure of the laminate 21 of another embodiment of the laminate of the present invention will be described with reference to Fig. 4 . Figure 4 is a view showing another embodiment of the present invention A schematic view of the laminate 21. Here, in the embodiment of the method for producing the laminate of the present invention shown in Fig. 1, the laminate 21 is a laminate in which the second separation layer forming step of (3) to (4) of Fig. 1 is omitted.

如圖4所示,本發明另一實施形態之層合體 21具備基板11、支撐基板11之光透過性之支撐板(支撐體)12、及設置於基板11與支撐板12之間之藉由吸收透過支撐板12所照射之光而變質之第一分離層15,且第一分離層15係藉由使用含有具有不飽和鍵之有機化合物與氟化合物之反應氣體之電漿處理而形成。 As shown in FIG. 4, the laminate of another embodiment of the present invention A support plate (support) 12 having a light transmittance of the substrate 11 and the support substrate 11 and a first separation between the substrate 11 and the support plate 12 by absorbing the light irradiated through the support plate 12 The layer 15 and the first separation layer 15 are formed by plasma treatment using a reaction gas containing an organic compound having an unsaturated bond and a fluorine compound.

層合體21係以基板11、接著層13、第一分 離層15及支撐板12之順序層合而成。層合體21中,第一分離層15係藉由使用含有具有不飽和鍵之有機化合物及氟化合物之反應氣體進行電漿處理而形成。因此,即使第一分離層形成步驟中使用低密度電漿進行電漿處理,層合體21亦可具備藉由吸收光而變質之第一分離層15。亦即,層合體21亦可使用具備容易大型化之平行平板電極之低密度電漿處理裝置適當地製造。因此,層合體21相較於通常之半導體晶片等之製造中使用之基板,可使用更大型化之基板製造。因此,可增大自一個層合體可得到之半導體晶片之製造量。 The laminate 21 is based on the substrate 11, the subsequent layer 13, and the first portion. The layer 15 and the support plate 12 are laminated in this order. In the laminate 21, the first separation layer 15 is formed by plasma treatment using a reaction gas containing an organic compound having an unsaturated bond and a fluorine compound. Therefore, even if the plasma treatment is performed using the low-density plasma in the first separation layer forming step, the laminate 21 may be provided with the first separation layer 15 which is deteriorated by absorbing light. In other words, the laminate 21 can be suitably produced by using a low-density plasma processing apparatus having a parallel plate electrode which is easy to increase in size. Therefore, the laminate 21 can be manufactured using a larger substrate than a substrate used in the manufacture of a general semiconductor wafer or the like. Therefore, the amount of semiconductor wafers available from one laminate can be increased.

(其他實施形態) (Other embodiments)

本發明之一實施形態所包含之第一分離層與第二分離層任一者先形成均可產生其優點。因此,本發明之層合體 並不限於僅形成第一分離層之實施形態,及形成第二分離層後形成第一分離層之實施形態。其他實施形態可列舉為例如先藉由第一分離層形成步驟於支撐板12上形成第一分離層15,隨後,藉由第二分離層形成步驟形成第二分離層14之層合體。 Any of the first separation layer and the second separation layer included in one embodiment of the present invention may be formed first. Therefore, the laminate of the present invention The embodiment is not limited to the embodiment in which only the first separation layer is formed, and the first separation layer is formed after the second separation layer is formed. Other embodiments may be exemplified by first forming the first separation layer 15 on the support plate 12 by the first separation layer forming step, and then forming the laminate of the second separation layer 14 by the second separation layer forming step.

依據上述構成,層合體可具備於各種藥品處 理中之耐藥品性良好之第一分離層15之優點,與藉照光而可適當變質之第二分離層14之優點兩者。亦即,對層合體進行期望處理時,即使因各種藥品處理使第二分離層14之一部分變質,亦由於形成了第一分離層15,故可防止支撐板12自層合體分離。又,由於可藉由透過支撐體所照射之光使第一分離層及第二分離層適當變質,故可使基板容易地自層合體分離。 According to the above configuration, the laminate can be provided in various medicines. The advantages of the first separation layer 15 which is good in chemical resistance and the advantages of the second separation layer 14 which can be appropriately deteriorated by light can be used. That is, when the laminate is subjected to a desired treatment, even if one of the second separation layers 14 is partially deteriorated by various drug treatments, since the first separation layer 15 is formed, the support plate 12 can be prevented from being separated from the laminate. Further, since the first separation layer and the second separation layer can be appropriately deteriorated by the light irradiated through the support, the substrate can be easily separated from the laminate.

本發明並不限於上述各實施形態,可在申請 專利範圍所示之範圍內進行各種變更,關於可適當組合於不同實施形態中分別揭示之技術手段之實施形態亦包含於本發明之技術範圍中。 The present invention is not limited to the above embodiments, and can be applied for Various modifications are possible within the scope of the patent range, and embodiments of the technical means that can be appropriately combined in different embodiments are also included in the technical scope of the present invention.

[實施例] [Examples] [支撐板分離性之評價] [Evaluation of separation of support plates]

製作形成各自不同之實施形態之分離層之層合體作為實施例1~3。使用該等實施例1~3之支撐板製作層合體,進行支撐板之分離性之評價。各實施例之內容如下。 As the examples 1 to 3, laminates in which the separation layers of the respective embodiments were formed were produced. The laminate was produced using the support sheets of Examples 1 to 3, and the separation property of the support sheets was evaluated. The contents of the respective embodiments are as follows.

實施例1:僅形成異戊二烯膜(第一分離層)之支撐板 Example 1: Support plate for forming only isoprene film (first separation layer)

實施例2:於支撐板上形成異戊二烯膜(第一分離層),隨後,於該第一分離層上形成氟碳膜(第二分離層)之支撐板 Example 2: forming a isoprene film (first separation layer) on a support plate, and subsequently forming a support plate of a fluorocarbon film (second separation layer) on the first separation layer

實施例3:於支撐板上形成氟碳膜(第二分離層),隨後,於該第二分離層上形成異戊二烯膜(第一分離層)之支撐板 Embodiment 3: forming a fluorocarbon film (second separation layer) on a support plate, and subsequently forming a support plate of a isoprene film (first separation layer) on the second separation layer

又,形成分離層之支撐體係使用12英吋玻璃支撐板,厚度700μm。 Further, the support system forming the separation layer used a 12-inch glass support plate having a thickness of 700 μm.

(第一分離層之形成) (formation of the first separation layer)

實施例1~3之層合體係如下述般形成第一分離層。製造層合體之具備平行平板電極之反應室之條件係調整為高頻電源之輸出電力1.0kW、壓力67Pa、及成膜溫度220℃。該反應室中,首先,將異戊二烯調整成流量200sccm,且作為反應氣體供給且以電漿CVD法進行電漿處理。隨後,不中斷電漿處理,而將異戊二烯調整成流量100sccm,將六氟化硫(SF6)調整成流量100sccm,藉由供給以1:1含有異戊二烯與六氟化硫(SF6)之反應氣體,以電漿CVD法進行電漿處理。藉此,形成由異戊二烯與六氟化硫(SF6)形成之第一分離層(膜厚0.5μm)。 The lamination system of Examples 1 to 3 formed the first separation layer as follows. The conditions for producing the reaction chamber of the laminate having the parallel plate electrodes were adjusted so that the output power of the high-frequency power source was 1.0 kW, the pressure was 67 Pa, and the film formation temperature was 220 °C. In the reaction chamber, first, isoprene was adjusted to a flow rate of 200 sccm, and supplied as a reaction gas and subjected to plasma treatment by a plasma CVD method. Subsequently, the plasma treatment was not interrupted, and isoprene was adjusted to a flow rate of 100 sccm, sulfur hexafluoride (SF 6 ) was adjusted to a flow rate of 100 sccm, and isoprene and hexafluoride were supplied by a supply of 1:1. The reaction gas of sulfur (SF 6 ) is subjected to plasma treatment by plasma CVD. Thereby, a first separation layer (film thickness: 0.5 μm) formed of isoprene and sulfur hexafluoride (SF 6 ) was formed.

(第二分離層之形成) (formation of the second separation layer)

實施例2及3之層合體係如下述般製作第二分離層。 反應室之條件係調整為壓力70Pa、高頻電力2,800W及成膜溫度240℃。該反應室中,藉由以成為流量400sccm之方式供給C4F8作為反應氣體之CVD法,形成第二分離層的氟碳膜(膜厚0.5μm)。 The laminate system of Examples 2 and 3 was prepared as follows. The conditions of the reaction chamber were adjusted to a pressure of 70 Pa, a high frequency power of 2,800 W, and a film formation temperature of 240 °C. In the reaction chamber, a fluorocarbon film (film thickness: 0.5 μm) of the second separation layer was formed by a CVD method in which C 4 F 8 was supplied as a reaction gas at a flow rate of 400 sccm.

(層合體之製作) (production of laminate)

接著,使用形成有上述分離層之支撐板製作層合體。 將接著劑組成物的TZNR(註冊商標)-A3007t(東京應化工業股份有限公司製)旋轉塗佈於12英吋矽晶圓上,在100℃、160℃、200℃各加熱3分鐘形成接著層(膜厚50μm)。接著,在真空下以220℃、4000Kg之條件,介隔接著層及第一分離層進行矽晶圓與支撐板之貼合3分鐘,製作層合體。 Next, a laminate was produced using a support plate on which the above separation layer was formed. TZNR (registered trademark)-A3007t (manufactured by Tokyo Ohka Kogyo Co., Ltd.) of the adhesive composition was spin-coated on a 12-inch wafer, and heated at 100 ° C, 160 ° C, and 200 ° C for 3 minutes to form a film. Layer (film thickness 50 μm). Next, the laminate was bonded to the support plate for 3 minutes under vacuum at a temperature of 220 ° C and 4000 Kg to form a laminate.

(支撐板之分離) (separation of the support plate)

以上述製作條件製作之層合體如下述般進行處理後,評價支撐板是否自矽晶圓分離。 The laminate produced under the above production conditions was treated as follows, and it was evaluated whether or not the support plate was separated from the wafer.

自層合體之支撐板側朝向第一分離層照射具 有532nm之波長之脈衝雷射。雷射條件為照射速度6,500mm/sec,脈衝頻率為40kHz、照射間距為180μm、照射範圍為 309mm。 A pulsed laser having a wavelength of 532 nm is irradiated from the support plate side of the laminate toward the first separation layer. The laser conditions are an irradiation speed of 6,500 mm/sec, a pulse frequency of 40 kHz, an irradiation pitch of 180 μm, and an irradiation range of 309mm.

(結果) (result)

實施例1中,可確認為在具備使用含有異戊二烯與六氟化硫(SF6)之反應氣體進行電漿處理所形成之第一分離層之層合體中,藉由照光,可自層合體適當地分離支撐板。且,實施例2及3中,可確認藉由照射光亦可使支撐板自層合體適當地分離。由此,可確認於支撐板上先形成第一分離層及第二分離層之任一者,均可藉由照射光使支撐板自層合體適當地分離。 In the first embodiment, it was confirmed that the laminate having the first separation layer formed by plasma treatment using a reaction gas containing isoprene and sulfur hexafluoride (SF 6 ) can be self-illuminated by irradiation. The laminate suitably separates the support plates. Further, in Examples 2 and 3, it was confirmed that the support plate can be appropriately separated from the laminate by irradiation of light. Thereby, it was confirmed that any of the first separation layer and the second separation layer was formed on the support plate, and the support plate can be appropriately separated from the laminate by the irradiation light.

[分離層之NMP耐性之評價] [Evaluation of NMP tolerance of separation layer]

將藉由與實施例1~3相同之條件形成分離層之支撐板浸漬於N-甲基-2-吡咯啶酮(NMP)中5分鐘,藉此進行NMP耐性之評價。又,作為比較例1,係針對藉由與第二分離層相同之條件僅形成氟碳膜(膜厚0.5μm)之支撐板亦進行相同之評價。 The support plate on which the separation layer was formed under the same conditions as in Examples 1 to 3 was immersed in N-methyl-2-pyrrolidone (NMP) for 5 minutes to evaluate NMP resistance. Further, as Comparative Example 1, the same evaluation was carried out for the support plate in which only the fluorocarbon film (film thickness: 0.5 μm) was formed under the same conditions as those of the second separation layer.

(結果) (result)

實施例1之支撐板之第一分離層在浸漬於NMP中5分鐘後未膨潤。且,實施例1中之第一分離層在浸漬於NMP後對分離層進行噴水亦未產生剝離。實施例2之支撐板之第一分離層未膨潤僅第二分離層膨潤,進行噴水時,第二分離層之一部分剝離。又,實施例3之支撐板,由於第二分離層被第一分離層被覆,故第一及第二分離層均未見到膨潤及剝離。相對於此,比較例1之分離層浸漬於NMP中5分鐘後見到膨潤。又,比較例1之分離層進 行噴水時,分離層之一部分剝離。 The first separation layer of the support plate of Example 1 was not swollen after being immersed in NMP for 5 minutes. Further, in the first separation layer of Example 1, the separation layer was sprayed with water after immersion in NMP, and no peeling occurred. The first separation layer of the support plate of Example 2 was not swollen, and only the second separation layer was swollen, and when water was sprayed, one of the second separation layers was partially peeled off. Further, in the support plate of Example 3, since the second separation layer was covered by the first separation layer, no swelling or peeling was observed in the first and second separation layers. On the other hand, the separation layer of Comparative Example 1 was immersed in NMP for 5 minutes and then swollen. Moreover, the separation layer of Comparative Example 1 When the water is sprayed, one of the separation layers is partially peeled off.

由該等之結果,可確認藉由使用含有異戊二 烯與六氟化硫(SF6)之反應氣體進行電漿處理所形成之第一分離層,在實施例1~3之任一例中對NMP之耐溶劑性均良好。因此,具備有使用含有異戊二烯與六氟化硫(SF6)之反應氣體進行電漿處理所形成之第一分離層之層合體,相較於僅具備氟碳膜之分離層之層合體,可防止因NMP而使分離層膨潤,且可防止支撐板分離。此外,使用實施例2之支撐板製作之層合體雖然第二分離層因NMP而膨潤,但因第一分離層未變質而可判斷可防止支撐板自層合體分離。 From the results of these, it was confirmed that the first separation layer formed by plasma treatment using a reaction gas containing isoprene and sulfur hexafluoride (SF 6 ) was used in any of Examples 1 to 3. The solvent resistance to NMP is good. Therefore, there is provided a laminate having a first separation layer formed by plasma treatment using a reaction gas containing isoprene and sulfur hexafluoride (SF 6 ), compared to a layer having a separation layer only having a fluorocarbon film. The combination prevents swelling of the separation layer by NMP and prevents separation of the support plates. Further, in the laminate produced by using the support plate of Example 2, although the second separation layer was swollen by NMP, it was judged that the separation of the support plate from the laminate was prevented because the first separation layer was not deteriorated.

[產業上之可利用性] [Industrial availability]

本發明之層合體之製造方法及層合體可廣泛地利用於例如經微細化之半導體裝置之製造步驟中。 The method for producing a laminate of the present invention and the laminate can be widely used in, for example, a manufacturing step of a miniaturized semiconductor device.

11‧‧‧基板 11‧‧‧Substrate

12‧‧‧支撐板(支撐體) 12‧‧‧Support plate (support)

13‧‧‧接著層 13‧‧‧Next layer

14‧‧‧第二分離層 14‧‧‧Second separation layer

15‧‧‧第一分離層 15‧‧‧First separation layer

20‧‧‧層合體 20‧‧‧Layer

Claims (11)

一種層合體之製造方法,其係具備有基板、支撐上述基板之光透過性的支撐體、以及被設置於上述基板與上述支撐體間,並藉由吸收透過上述支撐體所照射之光而變質之第一分離層的層合體之製造方法,其特徵係包含:藉由使用含有具有不飽和鍵之有機化合物與氟化合物之反應氣體進行電漿處理,而形成上述第一分離層之第一分離層形成步驟。 A method for producing a laminate comprising: a substrate; a support for supporting light transmittance of the substrate; and a substrate disposed between the substrate and the support, and being deteriorated by absorbing light irradiated through the support A method for producing a laminate of a first separation layer, characterized in that the first separation of the first separation layer is formed by plasma treatment using a reaction gas containing an organic compound having an unsaturated bond and a fluorine compound Layer formation step. 如請求項1之層合體之製造方法,其中上述有機化合物為烯類或環烯類。 The method for producing a laminate according to claim 1, wherein the organic compound is an olefin or a cycloolefin. 如請求項1之層合體之製造方法,其中上述有機化合物之沸點為30℃以上且100℃以下。 The method for producing a laminate according to claim 1, wherein the organic compound has a boiling point of 30 ° C or more and 100 ° C or less. 如請求項1之層合體之製造方法,其中上述氟化合物為六氟化硫(SF6)。 The method for producing a laminate according to claim 1, wherein the fluorine compound is sulfur hexafluoride (SF 6 ). 如請求項1之層合體之製造方法,其中上述有機化合物與上述氟化合物之體積比為6:4~9:1。 The method for producing a laminate according to claim 1, wherein the volume ratio of the organic compound to the fluorine compound is from 6:4 to 9:1. 如請求項1之層合體之製造方法,其中分離層形成步驟之上述電漿處理為低密度電漿處理。 The method for producing a laminate according to claim 1, wherein the plasma treatment of the separation layer forming step is a low-density plasma treatment. 如請求項1~6中任一項之層合體之製造方法,其中進一步包含:形成藉由吸收透過支撐體所照射之光而變質之第二分離層之第二分離層形成步驟。 The method for producing a laminate according to any one of claims 1 to 6, further comprising: a second separation layer forming step of forming a second separation layer which is deteriorated by absorbing light irradiated through the support. 如請求項7之層合體之製造方法,其中上述第二分離層係由氟碳化物所構成。 The method of producing a laminate according to claim 7, wherein the second separation layer is composed of a fluorocarbon. 一種層合體,其係具備有基板、支撐上述基板之 光透過性的支撐體、以及被設置於上述基板與上述支撐體之間,並藉由吸收透過上述支撐體所照射之光而變質之第一分離層之層合體,上述第一分離層係藉由使用含有具有不飽和鍵之有機化合物與氟化合物之反應氣體進行電漿處理而形成。 a laminate comprising a substrate and supporting the substrate a light-transmissive support and a laminate of a first separation layer which is disposed between the substrate and the support and which is deteriorated by light transmitted through the support, the first separation layer is borrowed It is formed by plasma treatment using a reaction gas containing an organic compound having an unsaturated bond and a fluorine compound. 如請求項9之層合體,其中上述支撐體進一步形成藉由吸收透過上述支撐體所照射之光而變質之第二分離層。 The laminate according to claim 9, wherein the support further forms a second separation layer which is deteriorated by absorbing light irradiated through the support. 如請求項10之層合體,其中上述第二分離層係由氟碳化物所構成。 The laminate of claim 10, wherein the second separation layer is composed of a fluorocarbon.
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