TW201724267A - Manufacturing method of power rectifier diode capable of reducing the quantity of photomasks and lowering the manufacturing cost - Google Patents

Abstract

A manufacturing method of power rectifier diode comprises the steps of: providing a first conduction type substrate having a cell region and a termination region; forming an oxidation layer on the substrate; etching the oxidation layer by using the same photomask to form a first opening and a second opening; forming a polysilicon layer and a first barrier layer; performing a doping fabrication on the substrate corresponding to the first opening to form a second conduction type field ring region; forming a second barrier layer; performing a doping fabrication on the substrate corresponding to the second opening to form a second conduction type main body region; removing the first barrier layer disposed on the main body region; and forming electrodes. By changing the manufacturing process of the power rectifier diode, it is able to reduce the quantity of photomasks and lower the manufacturing cost.

Description

Method for manufacturing power rectifier diode

The invention relates to a method for manufacturing a diode, in particular to a method for manufacturing a power rectifier diode.

Referring to FIG. 1, a known method for fabricating a power rectifier diode includes the steps of: providing an n-type substrate 11 having an n-type epitaxial layer 12 and a bottom portion of the n-type epitaxial layer 12 and The heavily doped n-type electrode contacts layer 10. The substrate 11 has an active area (Cell) 111 for its main working area, and a termination area 112 connected to one side of the active area 111 and located at the edge of the element. An oxide layer 13 is formed on the top surface of the substrate 11, and a portion of the oxide layer 13 on the termination region 112 is removed by etching with a first mask to form a first opening 131. Ion implantation is performed on a portion of the substrate 11 corresponding to the first opening 131 to obtain a p-type field ring 14 . Then, the structure of the active region 111 of the substrate 11 is performed. First, a second mask is used to etch and remove the local region of the oxide layer 13 on the active region 111 (as shown in the third flow of FIG. 1). Forming a continuous n-type polysilicon film (not shown) on the oxide layer 13, and then partially etching the n-type polysilicon film with a third mask to form an n-type polysilicon layer 15, and Portions of the oxide layer 13 are also removed to form a plurality of second openings 132. Then, a plurality of p-type body regions 16 are formed on the portion of the substrate 11 corresponding to the second openings 132 by ion implantation, and an n-type doping region 17 is formed on the top of each of the p-type body regions 16, and then Each n-type doped region 17 is partially etched away to form two n-type doped regions 17 to form two spaced n-type blocks 171, and between the n-type blocks 171 and the p-type body A heavily doped p-type contact region 161 is formed over region 16. Finally, a metal mask layer 18 is formed on the fourth substrate, and the metal electrode layer 18 extends substantially over the entire substrate 11 and contacts the p-type contact regions 161, the N-type block 171, and the n-type polysilicon layer 15. This completes the fabrication of the power rectifier diode. Wherein, the metal electrode layer 18 is patterned, so it is also required to be formed with a photomask.

Since the withstand voltage of the edge termination region 112 of the power rectifier diode is not easily controlled by many parameters, the breakdown voltage of the termination region 112 is generally smaller than that of the active region 111, so the terminal region must be improved through some structural design. 112 withstand voltage. Therefore, the terminal region 112 forms the p-type field ring 14, and its structure is different from that of the active region 111. However, due to the fact that a total of four mask processes must be used in the above-mentioned manufacturing method, the number of masks is large, which leads to an increase in process time, process complexity, and manufacturing cost, so the method needs to be improved.

Accordingly, it is an object of the present invention to provide a method of fabricating a power rectifier diode that reduces the process of the mask and reduces the cost of fabrication.

Therefore, the method for fabricating the power rectifier diode of the present invention comprises the steps of: providing a substrate of a first conductivity type, the substrate having an active region and a termination region; and step B: forming an oxide layer on the substrate; Etching the oxide layer with a mask to form a first opening and a second opening. The positions of the first opening and the second opening respectively correspond to the terminal area and the active area, and the opening of the first opening The size of the opening is larger than the opening size of the second opening; Step D: forming a polysilicon layer of a first conductivity type, the polysilicon layer covering the first opening and the second opening of the oxide layer; forming a first layer on the polysilicon layer a barrier layer, and the thickness of the first barrier layer covering the second opening is greater than the thickness of the first opening; and step E: performing a doping process on the substrate corresponding to the first opening to form a second a field-type ring region of the conductive type; step F: forming a second barrier layer to cover a portion on the terminal region; and step G: performing a doping process on the substrate corresponding to the second opening to form a second conductivity type the Lord a body region, and forming a doped region of a first conductivity type on the body region; step H: removing the first barrier layer on the active region; step I: forming an electrode, the electrode Contacting the polysilicon layer, the body region, and the doped regions.

The invention has the effect of: changing the manufacturing process of the power rectifier diode, wherein the oxide layer simultaneously forms the first opening and the second opening with different sizes by the same mask, so that the first barrier layer covers the second The thickness of the opening is greater than the thickness of the first opening, and has the function of shielding the active area, so as to prevent the doping process of step E from affecting the active area. Moreover, only the manufacturing process of the second barrier layer and the electrode forming step need to be matched with the photomask. Therefore, the overall process of the present invention is completely different from the conventional manufacturing method, and the number of photomasks can be reduced, and the manufacturing cost can be reduced.

Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same reference numerals.

Referring to Figures 2, 3 and 4, a first embodiment of the method for fabricating a power rectifier diode of the present invention comprises the following steps:

Step 81: Providing a substrate 2 of a first conductivity type, the substrate 2 having a connected active cell (Cell) 21 and a terminal region (Termination) 22 when distinguished in a horizontal direction. The substrate 2 of the present embodiment is an n-type germanium substrate. When the upper and lower directions are distinguished, the substrate 2 has a first conductivity type epitaxial layer 23, and one is located at the bottom of the epitaxial layer 23 and is of a first conductivity type. Electrode contact layer 20. Since the electrode contact layer 20 is used to connect an external metal electrode not shown, heavy doping may be employed to improve conductivity. The active area 21 is a main working area of the diode element, and the terminal area 22 is connected to the periphery of the active area 21 and is an edge area of the diode element.

Step 82: Form an oxide layer 3 on the substrate 2, the oxide layer 3 covering the active region 21 and the termination region 22.

Step 83: etching the oxide layer 3 with the same mask to form a first opening 31 and a plurality of second openings 32. The position of the first opening 31 corresponds to the terminal region 22, and the positions of the second openings 32 are opposite. The active area 21 should be present, and the opening size s1 of the first opening 31 is larger than the opening size s2 of each second opening 32.

Specifically, in step 83, the oxide layer 3 at the first opening 31 and the second opening 32 has been completely etched and removed (the surface of the substrate 2 at the first opening 31 and the second opening 32 is exposed) The oxide layer 3 is additionally formed as the gate oxide layer at the first opening 31 and the second opening 32. The material of the gate oxide layer is the same as the material of the oxide layer 3, but only the two The parameters such as deposition temperature and speed are controlled differently, so the film quality of the gate oxide layer is generally better than that of the oxide layer 3 originally formed.

Step 84: forming a poly-silicon layer 4 of a first conductivity type, the polysilicon layer 4 covering the first opening 31 and the second opening 32 of the oxide layer 3, and the polysilicon layer 4 is covered The thickness d2 of the second opening 32 is greater than the thickness d1 of the first opening 31. A first barrier layer 5 is formed on the polysilicon layer 4.

In the present embodiment, the process of forming the polysilicon layer 4 is mainly as shown in the third flow of FIG. 3, in which a continuous film-like polycrystalline germanium layer 4 is formed to cover the entire oxide layer 3, and the polycrystalline germanium layer 4 is etched back (Etch). Back) to remove the polysilicon layer 4 by a predetermined thickness, and finally to leave portions at the first opening 31 and the second opening 32. Wherein, since the opening size s1 of the first opening 31 is larger than the opening size s2 of the second opening 32, when the polysilicon layer 4 is deposited by vacuum coating, the thickness of the polysilicon layer 4 at the second opening 32 is naturally higher than that of the first opening 31. The thickness of the polysilicon layer 4 at one opening 31 is large because the coating material adhering to the upright surface around the opening is also filled in the opening during the coating process, so that the coating having a small opening size is formed. Thicker. Therefore, after removing the portion of the polysilicon layer 4 by etch back etching, as shown in the fourth flow of FIG. 3, when the polysilicon layer 4 at the first opening 31 is removed to expose the surface of the oxide layer 3, The polycrystalline germanium layer 4 of a certain thickness is still retained at the second opening 32.

Similarly, the step of forming the first barrier layer 5 is to form a first film layer 5 in a continuous film shape as shown in the fifth process of FIG. 3, and then the first barrier layer 5 is formed in the sixth process of FIG. The partial etching removal leaves only the portion located at the first opening 31 and the second opening 32. In the same way, the thickness of the first barrier layer 5 covering the second opening 32 is greater than the thickness of the first opening 31, and then the portion of the first barrier layer 5 is removed by etch back etching. When the first barrier layer 5 at an opening 31 is removed to expose the surface of the oxide layer 3, the first barrier layer 5 of a certain thickness remains at the second openings 32. The first barrier layer 5 of the present embodiment is a nitride having a material different from that of the oxide layer 3.

Step 85: Perform a doping process on the substrate 2 corresponding to the first opening 31 to form a field ring region 24 of a second conductivity type. In this embodiment, the field loop region 24 is formed by ion implantation, and ions can be implanted into the substrate 2 through the oxide layer 3 at the first opening 31 by controlling appropriate ion implantation energy. The field ring region 24 of the present embodiment is a p-type semiconductor. Therefore, the first conductivity type and the second conductivity type of the present embodiment are respectively n-type and p-type, and may be reversed in implementation. Therefore, in this step, the termination region 22 of the substrate 2 is mainly doped, and since the first barrier layer 5 still has a certain thickness at the second opening 32 after the previous step, the oxide layer 3 also has a certain thickness on the active region 21 of the substrate 2, so that it can serve as a shielding layer, and the active region 21 of the substrate 2 is also prevented from being affected by the ion implantation energy of the terminal region 22. In the implementation of the present invention, the field loop region 24 can be changed according to different withstand voltage requirements, and is not limited to one of the embodiments.

Step 86: Form a second barrier layer 6 to cover the portion on the termination region 22. Specifically, in the first flow of FIG. 4, the second barrier layer 6 is formed on the entire substrate 2 so that the second barrier layer 6 completely covers the polysilicon layer 4 and the first barrier layer 5. With the oxide layer 3. Then, as shown in the second flow of FIG. 4, the second barrier layer 6 is overlaid on the active region 21 by mask etching, and the second opening 32 of the oxide layer 3 is formed again. The substrate 2 corresponds to The surfaces of the second openings 32 are exposed. The second barrier layer 6 is formed to enhance the occlusion effect on the terminal region 22 to facilitate the next step.

It should be noted that the material of the second barrier layer 6 of the present embodiment is an oxide different from the material of the first barrier layer 5. The material of the second barrier layer 6 is the same as the material of the oxide layer 3. Therefore, the second barrier layer 6 and the oxide layer 3 are integrally formed in the figure, but the implementation is not limited by the same material.

Step 87: In the third process of FIG. 4, in the active region 21 of the substrate 2, a doping process is performed corresponding to the second openings 32 to form a plurality of body regions 25 of the second conductivity type. Specifically, in this embodiment, the p-type body regions 25 are formed by ion implantation, and ions can be implanted into the substrate 2 by controlling appropriate ion implantation energy, and because the terminal region 22 The oxide layer 3 and the second barrier layer 6 are shielded, so that the terminal region 22 is not affected when the active region 21 is ion implanted.

Then, the n-type doping is performed at the second opening 32 by ion implantation, so that a doped block of the first conductivity type is formed between each of the body regions 25 and the second opening 32. 26. Further, as shown in the fourth flow of FIG. 4, each doped block 26 is etched to form two doped regions 261 of the first conductivity type spaced apart. Finally, each body region 25 is heavily doped corresponding to a portion between the doped regions 261 to form a heavily doped portion 252 of the second conductivity type. Therefore, in practice, each p-type body region 25 includes a body portion 251 and a heavily doped portion 252 having a carrier concentration greater than that of the body portion 251.

Among them, although the main body region 25 and the field ring region 24 are both p-type, the carrier concentration is different because the functions and requirements of the two are different. Therefore, in the present embodiment, when the main body region 25 and the field ring region 24 are formed by ion implantation, the parameters of the ion implantation energy, the dose, and the heat treatment process are different. The parameters of the heat treatment process include the temperature and time of the heat treatment, and also which gas is to be introduced during the heat treatment.

Step 88: Removing the first barrier layer 5 on the active region 21 to expose the polysilicon layer 4. As shown in the fourth flow of FIG. 4, this step removes the first barrier layer 5 by wet etching. Since the material of the first barrier layer 5 is different from the material of the second barrier layer 6, both The etching rate of the same etching solution is different, so the first barrier layer 5 can be completely removed by using an appropriate etching solution, and the second barrier layer 6 remains.

Step 89: Forming a patterned electrode 7 with the reticle, thus completing the fabrication of the power rectifying diode. The electrode 7 extends on the active region 21 and the termination region 22 and contacts the polysilicon layer 4 and the doping region 261, and contacts the body region 25 via the second opening 32. The second barrier layer 6 and the oxide layer 3 are interposed between the electrode 7 and the field ring region 24. The heavily doped portion 252 of the body region 25 is a region having a high carrier concentration, and the high carrier concentration region contacts the electrode 7 to improve conductivity.

In summary, the present invention changes the manufacturing process of the entire power rectifying diode, wherein the first opening 31 and the second opening 32 are simultaneously formed in the same layer of the photomask 3, and the first opening 31 and the first opening 31 are formed. The openings of the two openings 32 are different in size, so that the thickness of the first barrier layer 5 covering the second opening 32 is naturally greater than the thickness of the first opening 31. Therefore, the first barrier can be removed by etching back etching. The portion of the layer 5, and the first barrier layer 5 will naturally retain a certain thickness at the second opening 32, and the function of shielding the active region 21 can be performed in the step 85. Moreover, only the manufacturing process of the second barrier layer 6 and the step of forming the electrode 7 need to be matched with the mask. Therefore, the overall process of the present invention is completely different from the conventional method, and the number of masks can be reduced, and the manufacturing cost can be reduced. It is to be noted that, in the manufacturing method of the present invention, the active region 21 of the substrate 2 and the terminal region 22 are provided with a barrier layer as a shield, so that ion implantation is performed to form the main body region 25 and the field ring region 24. Doping may be performed by using different ion implantation energy, and further, depending on the function of the active region 21 and the termination region 22, or the difference in withstand voltage requirements, a p-type region of a desired doping concentration is formed, The system is more flexible in application.

Referring to Figures 2, 5 and 6, a second embodiment of the method for fabricating a power rectifier diode of the present invention is substantially the same as the steps of the first embodiment, except that the present embodiment is formed when the polysilicon layer 4 is formed. Forming a continuous film-like polycrystalline germanium layer 4 to cover the entire oxide layer 3, and then performing chemical mechanical polishing (CMP) to remove a portion of the polycrystalline germanium layer 4, and then performing an etch back process to leave the polycrystalline germanium layer 4 only An opening 31 and a portion of the second opening 32 (as in the second flow of FIG. 5). In this embodiment, the CMP process is used to make the thickness of the polysilicon layer 4 uniform, which is advantageous for controlling the thickness, so that the thickness of the subsequently stacked film layer is relatively uniform. The process of forming the first barrier layer 5 is the same as that of the first embodiment. As shown in the third and fourth processes of FIG. 5, the first barrier layer 5 in the form of a continuous film is formed and then partially etched and removed. The polysilicon layer 4 in an opening 31 can be exposed. Next, as shown in the fifth flow of FIG. 5, the polysilicon layer 4 exposed in the first opening 31 is removed by etching to expose the underlying oxide layer 3. The subsequent steps are the same as steps 85 to 89 of the first embodiment, and will not be described.

6 shows the power rectifier diode produced in the embodiment. Since the film thickness of the polysilicon layer 4 is uniformly polished in this embodiment, the shape of the subsequent stacked film layer is slightly different from that of the first embodiment, but roughly The film layers provided above are the same as those of the first embodiment, and therefore will not be described.

However, the above is only the embodiment of the present invention, and the scope of the invention is not limited thereto, and all the equivalent equivalent changes and modifications according to the scope of the patent application and the patent specification of the present invention are still The scope of the invention is covered.

2‧‧‧Substrate
20‧‧‧electrode contact layer
21‧‧‧active area
22‧‧‧ Terminal Area
23‧‧‧Epoxy layer
24‧‧‧ Field Area
25‧‧‧ Main area
251‧‧‧ Main body
252‧‧‧ heavily doped
26‧‧‧Doped blocks
261‧‧‧Doped area
3‧‧‧Oxide layer
31‧‧‧ first opening
32‧‧‧second opening
4‧‧‧Polysilicon layer
5‧‧‧First barrier
6‧‧‧second barrier
7‧‧‧Electrode
81~89‧‧‧Steps
S1, s2‧‧‧ opening size
D1, d2‧‧‧ thickness

Other features and effects of the present invention will be apparent from the following description of the drawings, wherein: FIG. 1 is a schematic diagram showing a process for producing a known power rectifying diode; FIG. 2 is a step flow FIG. 3 is a schematic diagram showing a manufacturing process of a part of the steps of the first embodiment; FIG. 4 is a flow chart showing the manufacturing process of the other steps of the first embodiment; FIG. FIG. 5 is a schematic diagram showing a process flow, showing a part of the steps of a second embodiment of the method for fabricating the power rectifier diode of the present invention; and FIG. 6 is a schematic structural view showing the second embodiment The power rectifier diode produced.

2‧‧‧Substrate

20‧‧‧electrode contact layer

21‧‧‧active area

22‧‧‧ Terminal Area

23‧‧‧Epoxy layer

24‧‧‧ Field Area

3‧‧‧Oxide layer

31‧‧‧ first opening

32‧‧‧second opening

4‧‧‧Polysilicon layer

5‧‧‧First barrier

S1, s2‧‧‧ opening size

D1, d2‧‧‧ thickness

Claims (9)

A method for manufacturing a power rectifier diode, comprising: Step A: providing a substrate of a first conductivity type, the substrate having an active region and a termination region; Step B: forming an oxide layer on the substrate; Step C: matching The oxide layer is etched by the same reticle to form a first opening and a second opening. The positions of the first opening and the second opening respectively correspond to the terminal area and the active area, and the opening size of the first opening is larger than a size of the opening of the second opening; Step D: forming a polysilicon layer of a first conductivity type, the polysilicon layer covering the first opening and the second opening of the oxide layer; forming a first barrier on the polysilicon layer a layer, and the first barrier layer covers the thickness of the second opening to be larger than the thickness of the first opening; Step E: performing a doping process on the substrate corresponding to the first opening to form a second conductivity type Step F: forming a second barrier layer to cover a portion on the termination region; Step G: performing a doping process on the substrate corresponding to the second opening to form a second conductivity type main And forming a doped region of a first conductivity type on the body region; step H: removing the first barrier layer on the active region; and step I: forming an electrode, the electrode Contacting the polysilicon layer, the body region, and the doped regions. The method of manufacturing the power rectifier diode according to claim 1, wherein the step F is to form the second barrier layer on the entire substrate, so that the second barrier layer completely covers the polysilicon layer and the first barrier layer. Then, the portion of the second barrier layer covering the active region is removed by mask etching. The method of fabricating a power rectifier diode according to claim 1, wherein the first barrier layer is different from the material of the second barrier layer. The method of fabricating a power rectifier diode according to any one of claims 1 to 3, wherein the first barrier layer is a nitride. The method of fabricating a power rectifier diode according to any one of claims 1 to 3, wherein the step I is to form the electrode with a photomask. The method for manufacturing a power rectifier diode according to claim 1, wherein the step E and the step G are: forming the field loop region and the body region by ion implantation, and forming ions of the field loop region and the body region. The energy and dose of the implant are different from the heat treatment process. The method for manufacturing a power rectifier diode according to claim 1, wherein in step D, a continuous film-like polysilicon layer is formed to cover the oxide layer, and then the local etching of the polysilicon layer is removed to leave only a portion of the first opening and the second opening; the step of forming the first barrier layer is to first form a first barrier layer in a continuous film shape, and then removing the local etching of the first barrier layer leaving only the first barrier layer An opening and a portion at the second opening. The method for manufacturing a power rectifier diode according to claim 1, wherein after the step D forms the polysilicon layer, the polysilicon layer is subjected to chemical mechanical polishing to make the thickness of the polysilicon layer uniform. A method of fabricating a power rectifier diode according to claim 1, wherein the body region comprises a body portion, and a heavily doped portion having a carrier concentration greater than the body portion and contacting the electrode.