TW201721714A - Substrate processing apparatus and substrate processing method - Google Patents
Substrate processing apparatus and substrate processing method Download PDFInfo
- Publication number
- TW201721714A TW201721714A TW105131687A TW105131687A TW201721714A TW 201721714 A TW201721714 A TW 201721714A TW 105131687 A TW105131687 A TW 105131687A TW 105131687 A TW105131687 A TW 105131687A TW 201721714 A TW201721714 A TW 201721714A
- Authority
- TW
- Taiwan
- Prior art keywords
- phosphoric acid
- aqueous solution
- cerium oxide
- acid aqueous
- supply pipe
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 92
- 238000003672 processing method Methods 0.000 title claims description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 388
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 194
- 239000000654 additive Substances 0.000 claims abstract description 168
- 230000000996 additive effect Effects 0.000 claims abstract description 168
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 136
- 150000004767 nitrides Chemical class 0.000 claims abstract description 19
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 192
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 192
- 239000007864 aqueous solution Substances 0.000 claims description 144
- 238000003860 storage Methods 0.000 claims description 31
- 239000000243 solution Substances 0.000 claims description 23
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 10
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 238000005406 washing Methods 0.000 claims description 9
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 6
- 230000036571 hydration Effects 0.000 claims 1
- 238000006703 hydration reaction Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 13
- 239000000377 silicon dioxide Substances 0.000 abstract 6
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 40
- 239000007788 liquid Substances 0.000 description 25
- 238000005530 etching Methods 0.000 description 23
- 238000001514 detection method Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 7
- 238000011084 recovery Methods 0.000 description 6
- 238000004064 recycling Methods 0.000 description 6
- 238000003303 reheating Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000005304 joining Methods 0.000 description 5
- 238000011144 upstream manufacturing Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910019142 PO4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005338 heat storage Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
發明領域 本發明是有關於一種基板處理裝置及基板處理方法。FIELD OF THE INVENTION The present invention relates to a substrate processing apparatus and a substrate processing method.
發明背景 已知一種在半導體裝置或液晶顯示裝置等電子零件之濕蝕刻製程使用的基板處理裝置(例如，日本專利公開公報：特開2014－209581號公報)。基板處理裝置例如對於半導體基板上的氮化膜與氧化膜選擇性地進行蝕刻。Background of the Invention A substrate processing apparatus for use in a wet etching process of an electronic component such as a semiconductor device or a liquid crystal display device is known (for example, Japanese Laid-Open Patent Publication No. 2014-209581). The substrate processing apparatus selectively etches the nitride film and the oxide film on the semiconductor substrate, for example.
在製造半導體元件的製程中，會在半導體基板上積層蝕刻對象膜之氮化膜(例如，SiN膜)、以及蝕刻停止膜之氧化膜(例如，SiO2 )，將氮化膜使用磷酸水溶液(H3 PO4 )等藥液來進行蝕刻處理。不過，若半導體元件漸趨細微化，則膜本身會呈薄膜，所以必須提高蝕刻對象膜與蝕刻停止膜的選擇比。若無法充分調整此選擇比，在蝕刻製程中蝕刻停止膜會消失，還會將基底的膜蝕刻掉，而對元件製造產生不良影響。In the process of manufacturing a semiconductor device, a nitride film (for example, a SiN film) of an etching target film and an oxide film (for example, SiO 2 ) of an etching stopper film are laminated on a semiconductor substrate, and an aqueous phosphoric acid solution is used for the nitride film ( Etching is performed by a chemical solution such as H 3 PO 4 ). However, if the semiconductor element is gradually miniaturized, the film itself will be a thin film, so it is necessary to increase the selection ratio of the etching target film and the etching stop film. If the selection ratio cannot be sufficiently adjusted, the etching stop film will disappear during the etching process, and the film of the substrate will be etched away, which will adversely affect the device fabrication.
發明概要 在上述基板處理裝置中已知下述之點。亦即，已知：若在磷酸水溶液中使二氧化矽濃度較高，則氮化膜與氧化膜的選擇比會變高。通常，提高磷酸中之二氧化矽濃度的方法，已知有使用二氧化矽添加劑的方法。但是，當例如將二氧化矽添加劑在維持較濃的狀態下加至高溫的磷酸水溶液時，則二氧化矽添加劑會在配管的途中凝聚，此時，由於無法將預定量的二氧化矽添加於磷酸水溶液，所以會有蝕刻對象膜之選擇比不安定之虞。也就是說，難以以適當的二氧化矽濃度進行基板處理。此問題並不限於蝕刻處理，在使用二氧化矽添加劑的處理中也可能會產生。SUMMARY OF THE INVENTION The following points are known in the above substrate processing apparatus. That is, it is known that when the concentration of cerium oxide is made high in an aqueous phosphoric acid solution, the selection ratio of the nitride film to the oxide film becomes high. In general, a method of increasing the concentration of cerium oxide in phosphoric acid is known as a method using a cerium oxide additive. However, when, for example, the cerium oxide additive is added to a high-temperature phosphoric acid aqueous solution while maintaining a rich state, the cerium oxide additive aggregates on the way of the piping, and at this time, since a predetermined amount of cerium oxide cannot be added thereto Since the phosphoric acid aqueous solution is used, there is a possibility that the selection of the film to be etched is unstable. That is, it is difficult to perform substrate processing with an appropriate concentration of cerium oxide. This problem is not limited to the etching treatment and may occur in the treatment using the cerium oxide additive.
因此，本發明之實施形態的目的在於：提供一種即使是使用了二氧化矽添加劑的處理，也可以以適當的二氧化矽濃度執行基板處理的基板處理裝置及基板處理方法。Therefore, an object of an embodiment of the present invention is to provide a substrate processing apparatus and a substrate processing method which can perform substrate processing with an appropriate cerium oxide concentration even if a treatment using a cerium oxide additive is used.
本發明之實施形態的基板處理裝置，是處理至少形成有氮化膜與氧化膜之基板的基板處理裝置，其具有：磷酸水溶液貯留部，將磷酸水溶液貯留；磷酸水溶液供給部，透過磷酸水溶液供給配管將磷酸水溶液供給至前述磷酸水溶液貯留部；二氧化矽添加劑供給部，透過二氧化矽添加劑供給配管將二氧化矽添加劑供給至前述磷酸水溶液貯留部；水供給部，透過水供給配管將水供給至前述磷酸水溶液貯留部；以及處理部，藉由貯留在前述磷酸水溶液貯留部的前述磷酸水溶液來將前述基板進行處理，又，前述二氧化矽添加劑供給配管是連接於前述水供給配管的途中。A substrate processing apparatus according to an embodiment of the present invention is a substrate processing apparatus that processes a substrate having at least a nitride film and an oxide film, and has a phosphoric acid aqueous solution storage portion that stores a phosphoric acid aqueous solution, and a phosphoric acid aqueous solution supply unit that is supplied through a phosphoric acid aqueous solution. The pipe is supplied with the phosphoric acid aqueous solution to the phosphoric acid aqueous solution storage unit; the cerium oxide additive supply unit supplies the cerium oxide additive to the phosphoric acid aqueous solution storage unit through the cerium oxide additive supply pipe, and the water supply unit supplies the water through the water supply pipe. The phosphoric acid aqueous solution storage unit and the treatment unit treat the substrate by the phosphoric acid aqueous solution stored in the phosphoric acid aqueous solution storage unit, and the ceria additive supply pipe is connected to the water supply pipe.
本發明之實施形態的基板處理裝置，是處理至少形成有氮化膜與氧化膜之基板的基板處理裝置，其具有：磷酸水溶液貯留部，將磷酸水溶液貯留；磷酸水溶液供給部，透過磷酸水溶液供給配管將磷酸水溶液供給至前述磷酸水溶液貯留部；二氧化矽添加劑供給部，透過二氧化矽添加劑供給配管將二氧化矽添加劑供給至前述磷酸水溶液貯留部；水供給部，透過水供給配管將水供給至前述磷酸水溶液貯留部；以及處理部，藉由貯留在前述磷酸水溶液貯留部的前述磷酸水溶液來將前述基板進行處理，又，在前述水供給配管的途中，分別連接有前述二氧化矽添加劑供給配管、及前述磷酸水溶液供給配管。A substrate processing apparatus according to an embodiment of the present invention is a substrate processing apparatus that processes a substrate having at least a nitride film and an oxide film, and has a phosphoric acid aqueous solution storage portion that stores a phosphoric acid aqueous solution, and a phosphoric acid aqueous solution supply unit that is supplied through a phosphoric acid aqueous solution. The pipe is supplied with the phosphoric acid aqueous solution to the phosphoric acid aqueous solution storage unit; the cerium oxide additive supply unit supplies the cerium oxide additive to the phosphoric acid aqueous solution storage unit through the cerium oxide additive supply pipe, and the water supply unit supplies the water through the water supply pipe. The phosphoric acid aqueous solution storage unit and the treatment unit treat the substrate by the phosphoric acid aqueous solution stored in the phosphoric acid aqueous solution storage unit, and the cerium oxide additive is connected to the water supply pipe. The piping and the aqueous phosphoric acid solution are supplied to the piping.
本發明之實施形態的基板處理方法，是處理至少形成有氮化膜與氧化膜之基板的基板處理方法，其具有如下之步驟：透過磷酸水溶液供給配管將磷酸水溶液供給至可貯留磷酸水溶液的磷酸水溶液貯留部；透過水供給配管將水供給至前述磷酸水溶液貯留部；透過連接於前述水供給配管的二氧化矽添加劑供給配管，將二氧化矽添加劑供給至前述磷酸水溶液貯留部；以及在供給了前述二氧化矽添加劑之後，將水供給至前述水供給配管，把附著在前述水供給配管的前述二氧化矽添加劑洗淨。A substrate processing method according to an embodiment of the present invention is a substrate processing method for processing a substrate on which at least a nitride film and an oxide film are formed, and has a step of supplying a phosphoric acid aqueous solution to a phosphoric acid capable of storing a phosphoric acid aqueous solution through a phosphoric acid aqueous solution supply pipe. The aqueous solution storage unit supplies water to the phosphoric acid aqueous solution storage unit through the water supply pipe, and transmits the cerium oxide additive to the phosphoric acid aqueous solution storage unit through the cerium oxide additive supply pipe connected to the water supply pipe; After the cerium oxide additive, water is supplied to the water supply pipe, and the cerium oxide additive adhering to the water supply pipe is washed.
較佳實施例之詳細說明 以下，一面參照圖示一面說明本發明之實施形態。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings.
圖1是示意地顯示本發明之第1實施形態的基板處理裝置的說明圖。FIG. 1 is an explanatory view showing a substrate processing apparatus according to a first embodiment of the present invention.
圖2是顯示同基板處理裝置中之純水、磷酸水溶液、二氧化矽添加劑的供給時機的說明圖。另外，在圖1中，W是表示成為藥液處理對象的半導體晶圓等基板，在其表面，積層有蝕刻對象膜之氮化膜(例如，SiN膜)、以及蝕刻停止膜之氧化膜(例如，SiO2 膜)。而且，基板處理裝置10是以濕蝕刻裝置為例。2 is an explanatory view showing timings of supply of pure water, an aqueous phosphoric acid solution, and a cerium oxide additive in the same substrate processing apparatus. In addition, in FIG. 1, W is a substrate such as a semiconductor wafer to be subjected to a chemical liquid processing, and a nitride film (for example, a SiN film) on which an etching target film is laminated and an oxide film of an etching stop film are laminated on the surface ( For example, SiO 2 film). Further, the substrate processing apparatus 10 is exemplified by a wet etching apparatus.
如圖1所示，基板處理裝置10具備有：將磷酸水溶液貯留、加熱的加熱貯留部20；將水、磷酸水溶液、二氧化矽添加劑供給至此加熱貯留部20的供給部30；將已加熱之磷酸水溶液暫時地貯留的緩衝部40；把已回收之磷酸水溶液再加熱的再加熱部50；將基板W進行濕蝕刻處理的處理部60；把殘留在處理部60的磷酸水溶液回收的回收部70；以及連繫控制該等各部的控制部100。As shown in Fig. 1, the substrate processing apparatus 10 includes a heating storage unit 20 that stores and heats a phosphoric acid aqueous solution, and a supply unit 30 that supplies water, a phosphoric acid aqueous solution, and a cerium oxide additive to the heating storage unit 20; The buffer portion 40 in which the phosphoric acid aqueous solution is temporarily stored; the reheating portion 50 that reheats the recovered phosphoric acid aqueous solution; the processing portion 60 that performs the wet etching treatment on the substrate W; and the recovery portion 70 that recovers the phosphoric acid aqueous solution remaining in the processing portion 60 And the control unit 100 that controls the respective units.
加熱貯留部20具備有：將預定之二氧化矽濃度的磷酸水溶液貯留的槽21；把此槽21內之磷酸水溶液加熱的加熱器22；設在槽21，可檢測貯留在槽21內的磷酸水溶液之二氧化矽濃度的二氧化矽濃度檢測部23；檢測磷酸水溶液之磷酸濃度的磷酸濃度檢測部25；檢測磷酸水溶液之液面高度的液面檢測部26；以及沒有圖示的攪拌裝置。槽21是可貯留磷酸水溶液之上部開放的槽。此槽21例如藉由氟系之樹脂或石英等材料而形成。二氧化矽濃度檢測部23、磷酸濃度檢測部25、液面檢測部26是與控制部100連接，分別將檢測出的二氧化矽濃度、磷酸濃度、磷酸水溶液之液面高度輸出至控制部100。槽21是透過供給配管24而與後述之槽41連接。在供給配管24的途中，設有開閉閥24a。The heating storage unit 20 includes a tank 21 for storing a predetermined phosphoric acid aqueous solution of cerium oxide concentration, a heater 22 for heating the phosphoric acid aqueous solution in the tank 21, and a tank 21 for detecting phosphoric acid stored in the tank 21. The cerium oxide concentration detecting unit 23 of the cerium oxide concentration of the aqueous solution; the phosphoric acid concentration detecting unit 25 for detecting the phosphoric acid concentration of the phosphoric acid aqueous solution; the liquid level detecting unit 26 for detecting the liquid level of the phosphoric acid aqueous solution; and a stirring device (not shown). The tank 21 is a tank in which the upper portion of the aqueous phosphoric acid solution can be stored. This groove 21 is formed of, for example, a fluorine-based resin or a material such as quartz. The cerium oxide concentration detecting unit 23, the phosphoric acid concentration detecting unit 25, and the liquid level detecting unit 26 are connected to the control unit 100, and output the detected cerium oxide concentration, phosphoric acid concentration, and liquid level of the phosphoric acid aqueous solution to the control unit 100. . The groove 21 is connected to a groove 41 to be described later through the supply pipe 24. An opening and closing valve 24a is provided in the middle of the supply pipe 24.
供給部30具備有：水供給部31、二氧化矽添加劑供給部32、以及磷酸水溶液供給部33。The supply unit 30 includes a water supply unit 31, a ceria additive supply unit 32, and a phosphoric acid aqueous solution supply unit 33.
水供給部31具備有：從外部將水(純水)供給至槽21的水供給配管31a；以及設在此水供給配管31a途中的開閉閥31b。二氧化矽添加劑供給部32具備有：貯留二氧化矽添加劑的槽32a；把貯留在此槽32a的二氧化矽添加劑供給至槽21的二氧化矽添加劑供給配管32b；以及設在此二氧化矽添加劑供給配管32b途中的泵32c及開閉閥32d。二氧化矽添加材例如可使用研磨劑等所使用之液狀的膠態二氧化矽。二氧化矽添加劑供給配管32b在合流部A與水供給配管31a之途中連接。在此，在本實施形態中，把水供給配管31a中，從合流部A、到水供給配管31a之吐出口為止，稱為合流配管34。The water supply unit 31 includes a water supply pipe 31a that supplies water (pure water) to the tank 21 from the outside, and an opening and closing valve 31b that is provided in the middle of the water supply pipe 31a. The cerium oxide additive supply unit 32 includes a tank 32a for storing the cerium oxide additive, a cerium oxide additive supply pipe 32b for supplying the cerium oxide additive stored in the tank 32a to the tank 21, and a cerium oxide provided therein. The additive is supplied to the pump 32c and the opening and closing valve 32d in the middle of the pipe 32b. As the cerium oxide additive, for example, a liquid colloidal cerium oxide used for an abrasive or the like can be used. The cerium oxide additive supply pipe 32b is connected in the middle of the merging portion A and the water supply pipe 31a. In the present embodiment, the water supply pipe 31a is referred to as a merging pipe 34 from the merging portion A to the discharge port of the water supply pipe 31a.
合流配管34的一端(合流配管34之吐出側)，是從槽21的上部進入槽21內。因此，純水可以從水供給配管31a，經由合流配管34而供給至槽21。又，二氧化矽添加劑可從二氧化矽添加劑供給配管32b，經由合流配管34而供給至槽21。One end of the merging pipe 34 (the discharge side of the merging pipe 34) enters the groove 21 from the upper portion of the groove 21. Therefore, pure water can be supplied to the tank 21 from the water supply pipe 31a via the merging pipe 34. Further, the cerium oxide additive can be supplied from the cerium oxide additive supply pipe 32b to the tank 21 via the merging pipe 34.
磷酸水溶液供給部33具備有：從外部將磷酸水溶液供給至槽21的磷酸水溶液供給配管33a；以及設在此磷酸水溶液供給配管33a途中的開閉閥33b。The phosphoric acid aqueous solution supply unit 33 includes a phosphoric acid aqueous solution supply pipe 33a that supplies the phosphoric acid aqueous solution to the tank 21 from the outside, and an on-off valve 33b that is provided in the middle of the phosphoric acid aqueous solution supply pipe 33a.
磷酸水溶液供給配管33a位於槽21的上部，磷酸水溶液供給配管33a的吐出側是進入至槽21。另外，槽21也可為上部不開放。又，合流配管34及磷酸水溶液供給配管33a的吐出側也無須進入至槽21，僅相連接亦可。The phosphoric acid aqueous solution supply pipe 33a is located at the upper portion of the tank 21, and the discharge side of the phosphoric acid aqueous solution supply pipe 33a enters the tank 21. In addition, the groove 21 may not be open to the upper portion. Further, the discharge side of the condensing pipe 34 and the phosphoric acid aqueous solution supply pipe 33a does not need to enter the groove 21, and may be connected only to each other.
緩衝部40具備有：把已加熱之磷酸水溶液及再利用之磷酸水溶液暫時地貯留的上部開放之槽41。在槽41之下，設置有可將磷酸水溶液及再利用之磷酸水溶液加熱的加熱器41a。又，在槽41，設有可檢測貯留在槽41內的磷酸水溶液之液面高度的液面檢測部41b，檢測出的液面高度會被輸出至控制部100。另外，槽41也可為上部不開放。從槽41至處理部60，連接有吐出配管42。在吐出配管42的途中，設有泵42a、過濾器42b、開閉閥42c。又，在過濾器42b與開閉閥42c之間，連接有循環配管43之一端。循環配管43的另一端，與後述之再加熱部50的槽51連接。The buffer unit 40 is provided with an upper open groove 41 for temporarily storing the heated phosphoric acid aqueous solution and the reused phosphoric acid aqueous solution. Below the tank 41, a heater 41a capable of heating the phosphoric acid aqueous solution and the reused phosphoric acid aqueous solution is provided. Further, the tank 41 is provided with a liquid level detecting portion 41b capable of detecting the liquid level of the phosphoric acid aqueous solution stored in the tank 41, and the detected liquid level is output to the control unit 100. In addition, the groove 41 may not be open to the upper portion. The discharge pipe 42 is connected to the processing unit 60 from the groove 41. A pump 42a, a filter 42b, and an opening and closing valve 42c are provided in the middle of the discharge pipe 42. Further, one end of the circulation pipe 43 is connected between the filter 42b and the opening and closing valve 42c. The other end of the circulation pipe 43 is connected to a groove 51 of a reheating unit 50 to be described later.
再加熱部50具備有：回收在處理部60所使用過之磷酸水溶液的上部開放之槽51；將此槽51內之磷酸水溶液加熱的加熱器52；以及把磷酸水溶液從槽51供給至槽41的供給配管53。The reheating unit 50 includes a tank 51 that collects an upper portion of the phosphoric acid aqueous solution used in the treatment unit 60, a heater 52 that heats the phosphoric acid aqueous solution in the tank 51, and a phosphoric acid aqueous solution from the tank 51 to the tank 41. Supply pipe 53.
處理部60具有如下的機能：使用預定之二氧化矽濃度的磷酸水溶液，把半導體基板等之基板W表面上的氮化膜，相對於氧化膜選擇性地蝕刻而除去。此處理部60具備有：處理室61，具有保持基板W並使之旋轉的旋轉機構；以及噴嘴62，把預定之二氧化矽濃度的磷酸水溶液供給至該處理室61內的基板W上。此噴嘴62是吐出配管42之一端部，會從該噴嘴62將預定之二氧化矽濃度的磷酸水溶液吐出而作為處理液。亦即，處理部60向旋轉的基板W表面從噴嘴62供給預定之二氧化矽濃度的磷酸水溶液來作為處理液，藉此，可選擇性地除去基板W之表面上的氮化膜。The processing unit 60 has a function of selectively etching and removing the nitride film on the surface of the substrate W such as a semiconductor substrate by using a predetermined phosphoric acid aqueous solution having a concentration of cerium oxide. The processing unit 60 includes a processing chamber 61 having a rotating mechanism that holds the substrate W and rotates, and a nozzle 62 that supplies a predetermined phosphoric acid aqueous solution having a concentration of cerium oxide to the substrate W in the processing chamber 61. This nozzle 62 is one end of the discharge pipe 42 and discharges a predetermined phosphoric acid aqueous solution having a concentration of cerium oxide from the nozzle 62 as a treatment liquid. In other words, the processing unit 60 supplies a predetermined phosphoric acid aqueous solution having a concentration of cerium oxide to the surface of the rotating substrate W as a processing liquid from the nozzle 62, whereby the nitride film on the surface of the substrate W can be selectively removed.
回收部70具有連接於再加熱部50之槽51的回收配管71，在回收配管71的途中，設有泵71a。The recovery unit 70 has a recovery pipe 71 connected to the groove 51 of the reheating unit 50, and a pump 71a is provided in the middle of the recovery pipe 71.
控制部100具備有集中地控制各部的微電腦，更具備有記憶關於濕蝕刻之各種處理資訊或各種程式等的記憶部。控制部100具備有如下的機能：根據各種處理資訊或各種程式，當在二氧化矽濃度檢測部23所檢測出的磷酸水溶液之二氧化矽濃度，比容許值(預定之濃度幅度)低時，把二氧化矽添加劑供給至槽21。The control unit 100 includes a microcomputer that centrally controls each unit, and further includes a memory unit that stores various processing information or various programs for wet etching. The control unit 100 is provided with a function of the cerium oxide concentration of the phosphoric acid aqueous solution detected by the cerium oxide concentration detecting unit 23 being lower than the allowable value (predetermined concentration range) according to various processing information or various programs. The cerium oxide additive is supplied to the tank 21.
又，控制部100可控制上述之開閉閥24a等、泵32c等、加熱器22等，以實現上述的機能。控制的內容容後再述。Further, the control unit 100 can control the above-described opening and closing valve 24a, the like, the pump 32c, and the like, the heater 22, and the like to realize the above-described functions. The content of the control will be described later.
在如此構成之基板處理裝置10中，如下般地進行濕蝕刻處理。另外，開始時所有的開閉閥為關閉。一開始，控制部100開啟開閉閥33b，透過磷酸水溶液供給配管33a把磷酸水溶液供給至槽21內。由於被供給至槽21內的磷酸水溶液之二氧化矽濃度為非常接近0％的狀態，所以控制部100開啟開閉閥32d並且驅動泵32c，把槽32a內的二氧化矽添加劑透過二氧化矽添加劑供給配管32b及合流配管34供給至槽21。也就是說，把磷酸水溶液供給至槽21內，同時也把二氧化矽添加劑供給至槽21內。另外，由於槽21的容積為已知，所以在此階段，應供給至槽21的磷酸水溶液之供給量、以及與其供給量相應的二氧化矽添加劑之量也為已知。因此，事先設定好之預定量的磷酸水溶液與預定量的二氧化矽添加劑被供給至槽21後，控制部100將開閉閥32d與開閉閥33b關閉，停止磷酸水溶液與二氧化矽添加劑的供給。接著，控制部100開啟開閉閥31b，把事先設定好之預定量的純水透過水供給配管31a及合流配管34供給至槽21。此時，藉由流通於合流配管34的純水，會沖走在前述之二氧化矽添加劑供給時殘留在合流配管34內的二氧化矽添加劑，而進行合流配管34內的洗淨。使用於此洗淨的純水，會被供給至槽21。接著，當結束合流配管34內之洗淨，則控制部100將開閉閥31b關閉。之後，當在二氧化矽濃度檢測部23所檢測之磷酸水溶液的二氧化矽濃度比事先設定好的容許值(預定之濃度幅度)低時，會隨時進行此二氧化矽添加劑供給動作、以及水之洗淨動作。此點之詳細容後再述。In the substrate processing apparatus 10 configured as described above, the wet etching treatment is performed as follows. In addition, all on-off valves are closed at the beginning. Initially, the control unit 100 opens the opening and closing valve 33b, and supplies the phosphoric acid aqueous solution into the tank 21 through the phosphoric acid aqueous solution supply pipe 33a. Since the concentration of cerium oxide supplied to the phosphoric acid aqueous solution in the tank 21 is in a state of very close to 0%, the control unit 100 opens the opening and closing valve 32d and drives the pump 32c to permeate the cerium oxide additive in the tank 32a through the cerium oxide additive. The supply pipe 32b and the merging pipe 34 are supplied to the groove 21. That is, the aqueous phosphoric acid solution is supplied into the tank 21, and the cerium oxide additive is also supplied into the tank 21. Further, since the volume of the groove 21 is known, the amount of the phosphoric acid aqueous solution to be supplied to the tank 21 and the amount of the cerium oxide additive corresponding to the supply amount thereof are also known at this stage. Therefore, after the predetermined amount of the phosphoric acid aqueous solution and the predetermined amount of the cerium oxide additive are supplied to the tank 21, the control unit 100 closes the opening and closing valve 32d and the opening and closing valve 33b, and stops the supply of the phosphoric acid aqueous solution and the cerium oxide additive. Then, the control unit 100 opens the opening and closing valve 31b, and supplies a predetermined amount of pure water that has been set in advance to the tank 21 through the water supply pipe 31a and the merging pipe 34. At this time, the cerium oxide additive remaining in the merging pipe 34 at the time of supplying the cerium oxide additive described above is washed away by the pure water flowing through the merging pipe 34, and is washed in the merging pipe 34. The pure water used for this washing is supplied to the tank 21. Next, when the washing in the merging pipe 34 is completed, the control unit 100 closes the opening and closing valve 31b. After that, when the concentration of cerium oxide in the phosphoric acid aqueous solution detected by the cerium oxide concentration detecting unit 23 is lower than a predetermined allowable value (predetermined concentration range), the cerium oxide additive supply operation and water are performed at any time. Washing action. The details of this point will be described later.
另外，被供給至槽21內的溶液，會以前述之未圖示的攪拌裝置進行攪拌。又，已說明了把事先設定好之預定量的磷酸水溶液與二氧化矽添加劑供給至濕蝕刻處理開始時之槽21的情形，但控制部100也可根據分別來自於液面檢測部26、二氧化矽濃度檢測部23的輸出訊號，控制開閉閥33b、32d，藉此，來控制供給量。Further, the solution supplied into the tank 21 is stirred by a stirring device (not shown). Further, a case has been described in which a predetermined amount of a phosphoric acid aqueous solution and a cerium oxide additive which have been set in advance are supplied to the groove 21 at the start of the wet etching process, but the control unit 100 may also be derived from the liquid level detecting portion 26, respectively. The output signal of the cerium oxide concentration detecting unit 23 controls the opening and closing valves 33b and 32d, thereby controlling the supply amount.
又，當在二氧化矽濃度檢測部23所檢測之磷酸水溶液的二氧化矽濃度比事先設定好的容許值高時，控制部100開啟開閉閥33b，把磷酸水溶液供給至槽21內。此時之磷酸水溶液供給，是在二氧化矽濃度檢測部23所檢測之二氧化矽濃度值進入了容許值的階段停止。又，當藉由磷酸濃度檢測部25所檢測出的貯留在槽21的磷酸水溶液之磷酸濃度，變得比事先設定好的容許值高時，控制部100會開啟開閉閥31b，把純水透過水供給配管31a與合流配管34而供給至槽21。又，當在液面檢測部26所檢測之槽21內的磷酸水溶液之液面高度，比事先設定好的容許值(預定之高度幅度)低時，也會從磷酸水溶液供給部33將磷酸水溶液供給至槽21，直到在液面檢測部26所檢測之液面高度進行容許值為止。此時，當藉由二氧化矽濃度檢測部23，檢測到貯留在槽21內的磷酸水溶液之二氧化矽濃度變得比容許值低，則會從二氧化矽添加劑供給部32，透過二氧化矽添加劑供給配管32b與合流配管34而將二氧化矽添加劑供給至槽21。然後，在二氧化矽添加劑之供給結束之後，會馬上與上述一樣地進行純水之合流配管34的洗淨。When the concentration of cerium oxide in the phosphoric acid aqueous solution detected by the cerium oxide concentration detecting unit 23 is higher than a predetermined allowable value, the control unit 100 opens the opening and closing valve 33b to supply the phosphoric acid aqueous solution into the tank 21. The supply of the phosphoric acid aqueous solution at this time is stopped at the stage where the ceria concentration value detected by the ceria concentration detecting unit 23 enters the allowable value. When the phosphoric acid concentration of the phosphoric acid aqueous solution stored in the tank 21 detected by the phosphoric acid concentration detecting unit 25 is higher than the allowable value set in advance, the control unit 100 opens the opening and closing valve 31b to permeate the pure water. The water supply pipe 31a and the condensing pipe 34 are supplied to the tank 21. In addition, when the liquid level of the phosphoric acid aqueous solution in the tank 21 detected by the liquid level detecting unit 26 is lower than a predetermined allowable value (predetermined height range), the phosphoric acid aqueous solution is supplied from the phosphoric acid aqueous solution supply unit 33. It is supplied to the tank 21 until the liquid level height detected by the liquid level detecting unit 26 is allowed. At this time, when the concentration of cerium oxide in the phosphoric acid aqueous solution stored in the tank 21 is detected to be lower than the allowable value by the cerium oxide concentration detecting unit 23, the cerium oxide additive supply unit 32 is permeable to the second oxidizing agent. The hydrazine additive supply pipe 32b and the condensing pipe 34 supply the cerium oxide additive to the tank 21. Then, immediately after the supply of the cerium oxide additive is completed, the pure water mixing pipe 34 is washed as described above.
控制部100將電力供給至加熱器22，把磷酸水溶液的溫度維持在例如150～160℃。然後，以二氧化矽濃度檢測部23所檢測出的二氧化矽濃度已進入了容許值作為條件，控制部100開啟開閉閥24a。也可將磷酸濃度檢測部23所檢測出的磷酸濃度已進入了容許值這個條件，加入開啟開閉閥24a的條件。另外，控制部100在開閉閥24a開啟時，使來自於二氧化矽濃度檢測部23、磷酸濃度檢測部25、液面檢測部26的輸出訊號無效化。當開閉閥24a開啟，則槽21內的磷酸水溶液會流入槽41。藉由加熱器41a，槽41內的磷酸水溶液之溫度會維持在150～160℃。此時，控制部100驅動泵42a，藉此，磷酸水溶液會透過循環配管43而流入槽51。在槽51，透過循環配管43而循環、或是如後述般從處理部60回收的磷酸水溶液，會藉由加熱器52而維持在例如150～160℃。槽51內的磷酸水溶液會透過供給配管53而回到槽41。以下，繼續上述之磷酸水溶液的循環。另外，控制部100當藉由液面檢測部41b，檢測到槽41內之磷酸水溶液的液面高度已進入事先設定好的容許值，則將開閉閥24a關閉。The control unit 100 supplies electric power to the heater 22 to maintain the temperature of the phosphoric acid aqueous solution at, for example, 150 to 160 °C. Then, the control unit 100 opens the opening and closing valve 24a under the condition that the concentration of cerium oxide detected by the cerium oxide concentration detecting unit 23 has entered the allowable value. The condition that the phosphoric acid concentration detected by the phosphoric acid concentration detecting unit 23 has entered the allowable value may be added to the condition that the opening and closing valve 24a is opened. Further, when the opening and closing valve 24a is opened, the control unit 100 invalidates the output signals from the ceria concentration detecting unit 23, the phosphoric acid concentration detecting unit 25, and the liquid level detecting unit 26. When the opening and closing valve 24a is opened, the aqueous phosphoric acid solution in the tank 21 flows into the tank 41. The temperature of the phosphoric acid aqueous solution in the tank 41 is maintained at 150 to 160 ° C by the heater 41a. At this time, the control unit 100 drives the pump 42a, whereby the phosphoric acid aqueous solution passes through the circulation pipe 43 and flows into the groove 51. The phosphoric acid aqueous solution which is circulated through the circulation pipe 43 in the tank 51 or recovered from the treatment unit 60 as will be described later is maintained at, for example, 150 to 160 ° C by the heater 52. The phosphoric acid aqueous solution in the tank 51 passes through the supply pipe 53 and returns to the tank 41. Hereinafter, the circulation of the above aqueous phosphoric acid solution is continued. Further, when the liquid level detecting unit 41b detects that the liquid level of the phosphoric acid aqueous solution in the tank 41 has entered a predetermined allowable value, the control unit 100 closes the opening and closing valve 24a.
藉由處理部內之機構把成為處理對象之基板W保持在處理部60內，並在使基板W旋轉的狀態下，控制部100開啟開閉閥42c。藉此，從噴嘴62將磷酸水溶液供給至基板W上，進行濕蝕刻處理。The substrate W to be processed is held in the processing unit 60 by the mechanism in the processing unit, and the control unit 100 opens the opening and closing valve 42c while the substrate W is rotated. Thereby, the phosphoric acid aqueous solution is supplied from the nozzle 62 to the substrate W, and wet etching treatment is performed.
在被供給了磷酸水溶液的基板W，會將氮化膜與氧化膜進行蝕刻處理。此時，由於從噴嘴62，把已管理為預定之二氧化矽濃度的磷酸水溶液供給至基板W，所以可以用所需之選擇比來進行蝕刻。The nitride film and the oxide film are etched by the substrate W to which the phosphoric acid aqueous solution is supplied. At this time, since the phosphoric acid aqueous solution which has been managed to have a predetermined concentration of cerium oxide is supplied from the nozzle 62 to the substrate W, etching can be performed with a desired selection ratio.
從基板W的表面流至處理室61之底面的磷酸水溶液，會流通於與該底面連接之回收配管71而藉由泵71a之驅動被回收至槽51。使用了磷酸水溶液之蝕刻處理後的基板W，之後，會施行純水之水洗、或使用具速乾性之有機溶劑(異丙醇等)的乾燥，而送至下個半導體製造製程。另外，磷酸水溶液、純水、有機溶劑，是以分離回收機構(未圖示)個別地回收。The phosphoric acid aqueous solution flowing from the surface of the substrate W to the bottom surface of the processing chamber 61 flows through the recovery pipe 71 connected to the bottom surface and is recovered by the pump 71a to the groove 51. The substrate W after the etching treatment using the phosphoric acid aqueous solution is used, and then washed with pure water or dried with an organic solvent (isopropyl alcohol or the like) having a quick-drying property, and sent to the next semiconductor manufacturing process. Further, the phosphoric acid aqueous solution, the pure water, and the organic solvent are separately collected by a separation and recovery mechanism (not shown).
如上所述，透過緩衝部40，從槽21把具有預定之二氧化矽濃度的磷酸水溶液供給至處理部60，進行基板W的處理。As described above, the phosphoric acid aqueous solution having a predetermined concentration of cerium oxide is supplied from the tank 21 to the processing unit 60 through the buffer unit 40, and the processing of the substrate W is performed.
接著，使用圖2來說明在基板處理裝置10之蝕刻處理中對槽21供給磷酸水溶液、純水、二氧化矽添加劑之時機。Next, the timing of supplying the phosphoric acid aqueous solution, the pure water, and the cerium oxide additive to the tank 21 in the etching treatment of the substrate processing apparatus 10 will be described with reference to FIG. 2 .
關於磷酸水溶液，是在藉由液面檢測部26檢測到槽21內之磷酸水溶液的液面高度變得比容許值低時，開啟開閉閥33b，將磷酸水溶液供給至槽21內。In the phosphoric acid aqueous solution, when the liquid level detecting unit 26 detects that the liquid level of the phosphoric acid aqueous solution in the tank 21 is lower than the allowable value, the opening and closing valve 33b is opened, and the phosphoric acid aqueous solution is supplied into the tank 21.
關於純水，由於磷酸水溶液一直是被加熱中，所以水分會蒸發，磷酸水溶液的濃度會一點一點地變濃，因此在一定的時機開啟開閉閥31b，透過水供給配管31a及合流配管34而供給至槽21。另外，也可根據設在槽21的磷酸濃度檢測部25之輸出訊號，控制開閉閥31b，而將純水供給至槽21，來代替定期地供給純水。In the pure water, since the aqueous phosphoric acid solution is heated, the water is evaporated, and the concentration of the phosphoric acid aqueous solution is increased to a point. Therefore, the opening and closing valve 31b is opened at a predetermined timing, and the water supply pipe 31a and the condensing pipe 34 are transmitted. It is supplied to the tank 21. In addition, the on-off valve 31b may be controlled based on the output signal of the phosphoric acid concentration detecting unit 25 provided in the tank 21, and pure water may be supplied to the tank 21 instead of periodically supplying pure water.
關於二氧化矽添加劑，本實施形態的情況，主要是隨著對槽21供給磷酸水溶液而進行，當在二氧化矽濃度檢測部23所檢測的磷酸水溶液之二氧化矽濃度比容許值低時，開啟開閉閥32d，驅動泵32c而藉此把二氧化矽添加劑透過二氧化矽添加劑供給配管32b及合流配管34供給至槽21。另外，供給時機可為磷酸水溶液之供給前(圖2中α1)、供給中(圖2中α2)、供給後(圖2中α3)之任一者。另一方面，為了防止二氧化矽添加劑在合流配管34內乾燥而塞住，控制部100在關閉了開閉閥32d之後，也就是在二氧化矽添加劑之供給之後，馬上開啟開閉閥31b，透過水供給配管31a把事先設定好的預定量之純水供給至合流配管34內。亦即，當二氧化矽添加劑之供給時機為圖2中α1時，在圖2中β1之時機供給純水。同樣地，當二氧化矽添加劑之供給時機為圖2中α2時，在圖2中β2之時機供給純水。又，當二氧化矽添加劑之供給時機為圖2中α3時，在圖2中β3之時機供給純水。藉此，將二氧化矽添加劑從合流配管34沖洗掉。In the case of the cerium oxide additive, the phosphoric acid aqueous solution is supplied to the tank 21, and when the cerium oxide concentration of the phosphoric acid aqueous solution detected by the cerium oxide concentration detecting unit 23 is lower than the allowable value, The opening and closing valve 32d is opened, and the pump 32c is driven to supply the cerium oxide additive to the tank 21 through the cerium oxide additive supply pipe 32b and the merging pipe 34. Further, the supply timing may be any one of the supply of the phosphoric acid aqueous solution (α1 in Fig. 2), the supply (α2 in Fig. 2), and the supply (α3 in Fig. 2). On the other hand, in order to prevent the cerium oxide additive from being dried and plugged in the merging pipe 34, the control unit 100 opens the opening and closing valve 31b immediately after the opening and closing valve 32d is closed, that is, after the supply of the cerium oxide additive. The supply pipe 31a supplies a predetermined amount of pure water set in advance to the merging pipe 34. That is, when the supply timing of the cerium oxide additive is α1 in Fig. 2, pure water is supplied at the timing of β1 in Fig. 2. Similarly, when the supply timing of the cerium oxide additive is α2 in Fig. 2, pure water is supplied at the timing of β2 in Fig. 2. Further, when the supply timing of the cerium oxide additive is α3 in Fig. 2, pure water is supplied at the timing of β3 in Fig. 2 . Thereby, the cerium oxide additive is washed away from the condensing pipe 34.
另外，在把二氧化矽添加劑供給至槽21之後流至合流配管34之純水的事先設定好之預定量，例如可以用沖洗的時間來進行管理。亦即，可以使開閉閥31b的開放時間為如下的時間：藉由實驗等事先求出將二氧化矽添加劑沖洗乾淨的時間，而從該實驗結果定出的時間。另外，為了在結束供給二氧化矽添加劑之後，立刻供給純水，宜在關閉開閉閥32d時同時地開啟開閉閥31b。Further, the predetermined amount of the pure water which flows to the merging pipe 34 after the cerium oxide additive is supplied to the tank 21 can be set, for example, by the rinsing time. In other words, the opening time of the opening and closing valve 31b can be set to a time period obtained by rinsing the cerium oxide additive in advance by an experiment or the like, and determining the time from the experimental result. In addition, in order to supply pure water immediately after the supply of the cerium oxide additive is completed, it is preferable to simultaneously open the opening and closing valve 31b when the opening and closing valve 32d is closed.
在此，假設沒有藉由純水來洗淨合流配管34的情況，說明二氧化矽添加劑在合流配管34內凝聚的原理。亦即，二氧化矽添加劑當時間經過，水分會消失而乾燥，在合流配管34內會析出二氧化矽添加劑。當每次供給二氧化矽添加劑都產生此現象時，則二氧化矽添加劑會附著於合流配管34內壁，而慢慢地堆積。不久，二氧化矽添加劑會變硬成凝膠狀(凝聚)。因此，無法將適量的二氧化矽添加劑透過合流配管34而供給至槽21。所以，會無法使蝕刻時之氮化膜與氧化膜的選擇比安定，而會導致蝕刻不良。Here, assuming that the merging pipe 34 is not washed by pure water, the principle of condensing the cerium oxide additive in the merging pipe 34 will be described. That is, the cerium oxide additive disappears and is dried as time passes, and the cerium oxide additive is precipitated in the merging pipe 34. When this phenomenon occurs every time the cerium oxide additive is supplied, the cerium oxide additive adheres to the inner wall of the merging pipe 34 and is slowly accumulated. Soon, the cerium oxide additive will harden into a gel (agglomerate). Therefore, an appropriate amount of the cerium oxide additive cannot be supplied to the tank 21 through the merging pipe 34. Therefore, the selection of the nitride film and the oxide film at the time of etching cannot be stabilized, resulting in poor etching.
因此，在本實施形態中，如前所述，在透過合流配管34將二氧化矽添加劑供給至槽21後，把純水流至合流配管34，藉著此純水來將合流配管34內洗淨，藉此來解決此問題。因此，可以用適當的二氧化矽濃度來執行基板處理。Therefore, in the present embodiment, as described above, the cerium oxide additive is supplied to the tank 21 through the merging pipe 34, and the pure water is passed to the merging pipe 34, and the condensing pipe 34 is washed by the pure water. To solve this problem. Therefore, the substrate treatment can be performed with an appropriate concentration of cerium oxide.
又，如圖1所示之本實施形態，當合流配管34之吐出側的一部分進入了槽21內之狀態時，在槽21內，由於磷酸水溶液被加熱，所以會呈產生磷酸與水之高溫蒸氣的狀態。因此，高溫的蒸氣會侵入合流配管34內。當在此狀態下二氧化矽添加劑通過合流配管34，則二氧化矽添加劑會與作為酸的磷酸反應，由此，成為容易奪去二氧化矽添加劑之水分的狀態。因此，在上述構成的情況下，二氧化矽添加劑會傾向於在合流配管34內析出，成為凝膠狀而附著在合流配管34內壁。所以，無法將適量的二氧化矽添加劑，透過合流配管34而供給至槽21。因此，由於無法使蝕刻時之氮化膜與氧化膜的選擇比安定，所以會導致蝕刻不良。In the present embodiment, as shown in Fig. 1, when a part of the discharge side of the merging pipe 34 enters the inside of the groove 21, the phosphoric acid aqueous solution is heated in the groove 21, so that high temperature of phosphoric acid and water is generated. The state of the vapor. Therefore, high-temperature steam intrudes into the joining pipe 34. When the cerium oxide additive passes through the condensing pipe 34 in this state, the cerium oxide additive reacts with phosphoric acid as an acid, whereby the moisture of the cerium oxide additive is easily taken away. Therefore, in the case of the above configuration, the cerium oxide additive tends to precipitate in the merging pipe 34, and is gel-like and adheres to the inner wall of the merging pipe 34. Therefore, an appropriate amount of the cerium oxide additive cannot be supplied to the tank 21 through the merging pipe 34. Therefore, since the selection ratio of the nitride film and the oxide film at the time of etching cannot be stabilized, etching failure is caused.
在此，本實施形態中，即使是在將二氧化矽添加劑供給至槽21前的時機也可把事先定好的預定量之純水供給至合流配管34，以純水來沖洗合流配管34內的磷酸水溶液，藉此來解決此問題。由此，即使是上述構成，也可用適當的二氧化矽濃度來執行基板處理。Here, in the present embodiment, a predetermined amount of pure water which has been set in advance can be supplied to the merging pipe 34 at the timing before the cerium oxide additive is supplied to the tank 21, and the inside of the merging pipe 34 can be washed with pure water. Aqueous phosphoric acid solution is used to solve this problem. Thus, even in the above configuration, the substrate processing can be performed with an appropriate ceria concentration.
將二氧化矽添加劑供給至槽21前的時機之例，是列舉了在把二氧化矽添加劑供給至合流配管34之前，但只要是在隨著前次之二氧化矽添加劑供給的純水供給結束時機、到這次之二氧化矽添加劑供給時機之間即可。又，例如在隨著前次之二氧化矽添加劑供給的純水供給結束時機、到這次之二氧化矽添加劑供給時機之間的時間較短的情況下，在如先前所述，判斷為高溫蒸氣對合流配管34之侵入的影響較少時，也可省略二氧化矽添加劑之供給前的使用純水之洗淨。The timing of supplying the cerium oxide additive to the tank 21 is exemplified before the supply of the cerium oxide additive to the merging pipe 34, but as long as the supply of pure water is supplied with the previous cerium oxide additive. The timing can be between the timing of the supply of the cerium oxide additive. Further, for example, when the time between the supply of the pure water supplied from the previous cerium oxide additive and the timing of the supply of the cerium oxide additive is short, the high-temperature vapor is determined as described above. When the influence on the intrusion of the merging pipe 34 is small, the washing with pure water before the supply of the cerium oxide additive may be omitted.
另外，在本實施形態中，二氧化矽添加劑供給前之水的供給量，可以比添加後的供給量多。亦即，相對於在二氧化矽添加劑供給前所供給的水，主要的目的是使附著在合流配管34內的磷酸(蒸氣)，全部從合流配管34內排出，在二氧化矽添加劑供給後所供給的水，主要目的則是使二氧化矽添加劑具有流動性，而不會留在合流配管34內。在此，水供給配管31a的開閉閥31b，宜為可調整流量的機構。Further, in the present embodiment, the amount of water supplied before the supply of the cerium oxide additive may be larger than the amount of supply after the addition. In other words, the main purpose of the water supplied before the supply of the cerium oxide additive is to discharge the phosphoric acid (vapor) adhering to the condensing pipe 34 from the condensing pipe 34, after the cerium oxide additive is supplied. The main purpose of the supplied water is to make the cerium oxide additive fluid, and does not remain in the merging pipe 34. Here, the opening and closing valve 31b of the water supply pipe 31a is preferably a mechanism that can adjust the flow rate.
如此，在基板處理裝置10中，當槽21內之磷酸水溶液的二氧化矽濃度比容許值低之時，可以把二氧化矽添加劑，透過合流配管34而供給至槽21，而使二氧化矽濃度維持為一定。As described above, in the substrate processing apparatus 10, when the concentration of cerium oxide in the phosphoric acid aqueous solution in the tank 21 is lower than the allowable value, the cerium oxide additive can be supplied to the tank 21 through the condensing pipe 34, and the cerium oxide can be made. The concentration is maintained constant.
而且，在本實施形態中，是在把二氧化矽添加劑供給至合流配管34之後，馬上透過水供給配管31a將純水供給至此合流配管34並供給預定時間。藉此，附著在合流配管34內的二氧化矽添加劑，會藉著純水而從合流配管34被沖洗掉。因此，在每次透過合流配管34供給二氧化矽添加劑之時，並且是在二氧化矽添加劑之供給後對於此合流配管34流通純水，藉此，來將附著在合流配管34內壁的二氧化矽添加劑洗淨而除去，所以，在合流配管34內，可以抑制二氧化矽添加劑的析出或凝膠化的產生，而可防止合流配管34塞住。又，藉著防止合流配管34塞住，可在每次供給二氧化矽添加劑時，都對槽21供給適量的二氧化矽添加劑。藉此，由於在槽21會貯留具有適當之二氧化矽濃度的磷酸水溶液，所以可以使蝕刻時之氮化膜與氧化膜的選擇比安定，而可防止蝕刻不良的產生。也就是說，可以用適當的二氧化矽濃度來執行基板處理。In the present embodiment, after the cerium oxide additive is supplied to the merging pipe 34, the pure water is supplied to the merging pipe 34 through the water supply pipe 31a and supplied for a predetermined period of time. Thereby, the cerium oxide additive adhering to the merging pipe 34 is washed away from the merging pipe 34 by pure water. Therefore, each time the cerium oxide additive is supplied through the merging pipe 34, pure water is circulated to the merging pipe 34 after the supply of the cerium oxide additive, whereby the inner wall adhering to the inner wall of the merging pipe 34 is attached. Since the cerium oxide additive is washed and removed, the precipitation of the cerium oxide additive or the gelation can be suppressed in the merging pipe 34, and the merging pipe 34 can be prevented from being plugged. Further, by preventing the merging pipe 34 from being plugged, an appropriate amount of the cerium oxide additive can be supplied to the tank 21 every time the cerium oxide additive is supplied. Thereby, since the phosphoric acid aqueous solution having an appropriate concentration of cerium oxide is stored in the groove 21, the selection ratio of the nitride film and the oxide film at the time of etching can be stabilized, and the occurrence of etching failure can be prevented. That is, the substrate treatment can be performed with an appropriate concentration of cerium oxide.
又，是在透過合流配管34將二氧化矽添加劑供給至槽21之前，把純水供給至合流配管34。這是因為在前述構成的情況下，高溫的蒸氣會混入合流配管34，包含在高溫蒸氣中的磷酸，會附著在合流配管34內壁。當附著在此合流配管34內壁的磷酸與二氧化矽添加劑接觸時，會產生磷酸奪去二氧化矽添加劑之水分的作用，結果，所析出的二氧化矽添加劑會附著在合流配管34的內壁。Moreover, the pure water is supplied to the merging pipe 34 before the cerium oxide additive is supplied to the tank 21 through the merging pipe 34. This is because, in the case of the above configuration, high-temperature steam is mixed into the condensing pipe 34, and phosphoric acid contained in the high-temperature steam adheres to the inner wall of the merging pipe 34. When phosphoric acid adhering to the inner wall of the merging pipe 34 is brought into contact with the cerium oxide additive, phosphoric acid acts to remove the moisture of the cerium oxide additive, and as a result, the precipitated cerium oxide additive adheres to the merging pipe 34. wall.
因此，在透過合流配管34將二氧化矽添加劑供給至槽21前，把純水流至合流配管34而沖洗附著在合流配管34內的磷酸，藉此，即使把二氧化矽添加劑供給至合流配管34，也可防止二氧化矽添加劑在合流配管34內與磷酸接觸。藉此，即使是磷酸水溶液的蒸氣浸入合流配管時，也可抑制二氧化矽添加劑在合流配管34內析出或凝膠化而變硬，而可防止合流配管34內塞住。又，由於在槽21會貯留具有適當的二氧化矽濃度的磷酸水溶液，所以可以使蝕刻時之氮化膜與氧化膜的選擇比安定，而可防止蝕刻不良的產生。也就是說，可以用適當的二氧化矽濃度來執行基板處理。Therefore, before the cerium oxide additive is supplied to the tank 21 through the condensing pipe 34, the pure water flows to the merging pipe 34 to wash the phosphoric acid adhering to the condensing pipe 34, whereby the cerium oxide additive is supplied to the merging pipe 34. It is also possible to prevent the cerium oxide additive from coming into contact with the phosphoric acid in the merging pipe 34. By this means, even when the vapor of the phosphoric acid aqueous solution is immersed in the condensing pipe, the cerium oxide additive can be prevented from being precipitated or gelled in the merging pipe 34 to be hardened, and the merging pipe 34 can be prevented from being sequestered. Further, since the phosphoric acid aqueous solution having an appropriate concentration of cerium oxide is stored in the groove 21, the selection ratio of the nitride film and the oxide film at the time of etching can be stabilized, and the occurrence of etching failure can be prevented. That is, the substrate treatment can be performed with an appropriate concentration of cerium oxide.
圖3是示意地顯示本發明之第2實施形態的基板處理裝置10A的說明圖。在圖3中對於與圖1相同機能部分附加相同的符號，並省略其詳細說明。FIG. 3 is an explanatory view showing a substrate processing apparatus 10A according to a second embodiment of the present invention. In FIG. 3, the same reference numerals are attached to the same functions as those in FIG. 1, and detailed description thereof will be omitted.
在基板處理裝置10A中，於把水(純水)供給至槽21的水供給配管31a的途中，在合流部B連接有二氧化矽添加劑供給配管32b，在合流部C連接有磷酸水溶液供給配管33a。另外，在水供給配管31a中，把水供給部31側稱為上游側，與槽21對向之吐出口側稱為下游側，而比水供給配管31a中之合流部C還靠下游側，在本實施形態中是稱為合流配管34。又，在水供給配管31a中，合流部B是設在比合流部C還要靠下游側。也就是說，設置有使磷酸水溶液供給配管33a與水供給配管31a合流而供給至槽21的合流配管34，在此合流配管34的途中，連接有二氧化矽添加劑供給配管32b。In the substrate processing apparatus 10A, in the middle of supplying the water (pure water) to the water supply pipe 31a of the tank 21, the cerium oxide additive supply pipe 32b is connected to the merging portion B, and the phosphoric acid aqueous solution supply pipe is connected to the merging portion C. 33a. In the water supply pipe 31a, the side of the water supply unit 31 is referred to as the upstream side, the side of the discharge port facing the groove 21 is referred to as the downstream side, and the side of the water supply pipe 31a is further downstream than the merging portion C of the water supply pipe 31a. In the present embodiment, it is referred to as a merging pipe 34. Further, in the water supply pipe 31a, the merging portion B is provided on the downstream side of the merging portion C. In other words, the condensing pipe 34 for supplying the phosphoric acid aqueous solution supply pipe 33a and the water supply pipe 31a to the tank 21 is provided, and the cerium oxide additive supply pipe 32b is connected in the middle of the merging pipe 34.
在本實施形態中，由於磷酸水溶液、二氧化矽添加劑流通於合流配管34，所以當磷酸水溶液附著在合流配管34的內壁，則如前所述，在供給了二氧化矽添加劑時，二氧化矽添加劑與磷酸水溶液會反應。例如，在透過合流配管34同時地供給磷酸水溶液與二氧化矽添加劑時，即使將磷酸水溶液與二氧化矽添加劑混合，二氧化矽添加劑也不會立刻析出。因此，在磷酸水溶液流動時，即使供給二氧化矽添加劑，藉由磷酸水溶液流動，二氧化矽添加劑也會一起流動。不過，不宜使磷酸水溶液與二氧化矽添加劑以混合的狀態，在留在合流配管34內的狀態下經過長時間。為了防止此情形，在透過合流配管34供給了二氧化矽添加劑之後把純水供給至合流配管34。又，在二氧化矽添加劑的供給前，把純水供給至合流配管34內而將合流配管內洗淨。這些點與第1實施形態相同。In the present embodiment, since the phosphoric acid aqueous solution and the cerium oxide additive are circulated to the merging pipe 34, when the phosphoric acid aqueous solution adheres to the inner wall of the merging pipe 34, as described above, when the cerium oxide additive is supplied, the oxidizing agent is used. The hydrazine additive reacts with the aqueous phosphoric acid solution. For example, when the phosphoric acid aqueous solution and the cerium oxide additive are simultaneously supplied through the merging pipe 34, even if the phosphoric acid aqueous solution is mixed with the cerium oxide additive, the cerium oxide additive does not precipitate immediately. Therefore, when the phosphoric acid aqueous solution is supplied, even if the cerium oxide additive is supplied, the cerium oxide additive flows together by the aqueous solution of the phosphoric acid. However, it is not preferable to leave the phosphoric acid aqueous solution and the cerium oxide additive in a state of being mixed, and it is left for a long period of time while remaining in the merging pipe 34. In order to prevent this, the pure water is supplied to the merging pipe 34 after the cerium oxide additive is supplied through the merging pipe 34. Further, before the supply of the cerium oxide additive, pure water is supplied into the merging pipe 34 to wash the inside of the merging pipe. These points are the same as in the first embodiment.
在如此構成之基板處理裝置10A中，也在與上述之基板處理裝置10同樣的時機，供給磷酸水溶液、純水、二氧化矽添加劑。而且，在本實施形態中，也具有與第1實施形態同樣的作用效果。In the substrate processing apparatus 10A configured as described above, an aqueous phosphoric acid solution, pure water, and cerium oxide additive are supplied at the same timing as the above-described substrate processing apparatus 10. Further, in the present embodiment, the same operational effects as those of the first embodiment are obtained.
圖4是示意地顯示本發明之第3實施形態的基板處理裝置10B的說明圖。在圖4中對於與圖1相同機能部分附加相同符號，並省略其詳細說明。FIG. 4 is an explanatory view showing a substrate processing apparatus 10B according to a third embodiment of the present invention. In FIG. 4, the same functions as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted.
在基板處理裝置10B中，是在把水(純水)供給至槽21的水供給配管31a的途中，在合流部B連接有二氧化矽添加劑供給配管32b，在合流部C連接有磷酸水溶液供給配管33a。在水供給配管31a中，合流部B是設在比合流部C還靠上游側。又，水供給配管31a中比合流部B還靠下游側，在本實施形態中稱為合流配管34。也就是說，設置有使二氧化矽添加劑供給配管32b與水供給配管31a合流而供給至槽21的合流配管34，且在合流配管34的途中，連接有磷酸水溶液供給配管33a。In the substrate processing apparatus 10B, in the middle of supplying the water (pure water) to the water supply pipe 31a of the tank 21, the cerium oxide additive supply pipe 32b is connected to the merging portion B, and the phosphoric acid aqueous solution is connected to the merging portion C. Pipe 33a. In the water supply pipe 31a, the merging portion B is provided on the upstream side of the merging portion C. Further, the water supply pipe 31a is further downstream than the merging portion B, and is referred to as a merging pipe 34 in the present embodiment. In other words, the condensing pipe 34 in which the cerium oxide additive supply pipe 32b and the water supply pipe 31a are merged and supplied to the tank 21 is provided, and the phosphoric acid aqueous solution supply pipe 33a is connected in the middle of the merging pipe 34.
在如此構成之基板處理裝置10B中，也在與上述之基板處理裝置10同樣的時機，供給磷酸水溶液、純水、二氧化矽添加劑。又，在供給了二氧化矽添加劑之後又，在二氧化矽添加劑供給前，把純水供給至合流配管34內而將合流配管34內洗淨此點，與第1、第2實施形態一樣，具有同樣的作用效果。In the substrate processing apparatus 10B configured as described above, an aqueous phosphoric acid solution, pure water, or cerium oxide additive is supplied at the same timing as the above-described substrate processing apparatus 10. In addition, after the supply of the cerium oxide additive, the pure water is supplied to the merging pipe 34 and the inside of the merging pipe 34 is washed before the cerium oxide additive is supplied, as in the first and second embodiments. Has the same effect.
在上述之實施形態中，是使用將基板W依1片、1片處理的單片式處理方法，但並不限於此，例如，也可使用將複數片基板W同時浸漬於處理槽而進行處理的分批式處理方法。In the above-described embodiment, a single-piece processing method in which the substrate W is processed in one sheet or one sheet is used. However, the present invention is not limited thereto. For example, a plurality of substrates W may be simultaneously immersed in a processing tank for processing. Batch processing method.
在分批式處理方法中，可以把使磷酸水溶液供給配管或二氧化矽添加劑供給配管在途中合流的水供給配管，直接或間接地連接於分批式處理槽，或是使槽21連接於分批式處理槽來進行實施。In the batch type processing method, the water supply pipe for connecting the phosphoric acid aqueous solution supply pipe or the cerium oxide additive supply pipe in the middle may be directly or indirectly connected to the batch type treatment tank, or the tank 21 may be connected to the branch. Batch processing tanks are implemented.
又，吐出磷酸水溶液的噴嘴62，是舉例顯示了位置固定者，但也可為沿著基板W的表面掃描的構成。Further, the nozzle 62 that discharges the aqueous phosphoric acid solution is an example in which the position is fixed, but the configuration may be performed along the surface of the substrate W.
又，在上述之實施形態中，沖洗二氧化矽添加劑的水與用來供給至槽21的水(隨著被加熱的磷酸水溶液之水分蒸發所進行的補充)，是由1個水供給部31進行供給，但也可另外設置用來供給至槽21之水的機構。Further, in the above embodiment, the water for rinsing the cerium oxide additive and the water for supplying to the tank 21 (supplemented by evaporation of water by the heated aqueous phosphoric acid solution) are supplied from one water supply unit 31. The supply is performed, but a mechanism for supplying water to the tank 21 may be additionally provided.
又，也可如圖1～圖3所示，在合流配管34設置開閉閥34a，使排出配管34b連接於比設有開閉閥34a的位置還靠上游側。在上述之各實施形態中，是構成為使洗淨了合流配管34之後的純水流至槽21。由於附著在合流配管34的二氧化矽添加劑，是應供給至槽21的供給量之一部分，所以藉著流至作為供給目的地之槽21，可以維持二氧化矽添加劑的必要量。但是，在考慮到用以洗淨附著在合流配管34之二氧化矽添加劑的純水量較多，會對貯留在槽21內的磷酸水溶液濃度產生影響時，在關閉了開閉閥34a的狀態下將洗淨水流至合流配管34，把洗淨後的水透過從合流配管34分岐的排出配管34b而排出至槽21以外。如此一來，即使洗淨水的量較多，也不會稀釋磷酸水溶液。又，在藉由洗淨可以除去例如變成硬塊而附著在合流配管34的二氧化矽添加劑時，可以防止該硬塊進入槽21。另外，雖然二氧化矽添加劑的必要量之一部分會被排出至外部，但是在比起二氧化矽添加劑的濃度降低而要優先防止合流配管34內的二氧化矽添加劑附著的情況下，是有效的。二氧化矽濃度的降低，可以藉著透過已洗淨之合流配管34再度供給二氧化矽添加劑而達成。Further, as shown in FIG. 1 to FIG. 3, the opening/closing pipe 34a may be provided in the joining pipe 34, and the discharge pipe 34b may be connected to the upstream side of the position where the opening and closing valve 34a is provided. In each of the above embodiments, the pure water after the merging of the joining pipe 34 is caused to flow into the tank 21. Since the cerium oxide additive adhering to the merging pipe 34 is a part of the supply amount to be supplied to the tank 21, the necessary amount of the cerium oxide additive can be maintained by flowing to the tank 21 as a supply destination. However, in consideration of the fact that the amount of pure water used for washing the cerium oxide additive adhering to the merging pipe 34 is large, and the concentration of the phosphoric acid aqueous solution stored in the tank 21 is affected, the opening and closing valve 34a is closed. The washing water flows to the joining pipe 34, and the washed water is discharged to the outside of the tank 21 through the discharge pipe 34b branched from the joining pipe 34. As a result, even if the amount of the washing water is large, the aqueous phosphoric acid solution is not diluted. Further, when the cerium oxide additive which adheres to the merging pipe 34, for example, becomes a hard block by washing, the slab can be prevented from entering the groove 21. In addition, although a part of the necessary amount of the cerium oxide additive is discharged to the outside, it is effective in the case where the concentration of the cerium oxide additive is lowered and the cerium oxide additive in the merging pipe 34 is preferentially prevented from adhering. . The decrease in the concentration of cerium oxide can be achieved by re-supplying the cerium oxide additive through the washed merging pipe 34.
若考慮到要防止二氧化矽添加劑在配管內塞住，可盡可能地擴大在合流配管34中供給純水的範圍。為此，開閉閥34a宜盡量設在合流配管34的吐出口附近(水供給配管31a的下游端附近)，排出配管34b宜連接於比起開閉閥34a較靠近上游側、且為合流配管34的吐出側附近。When it is considered that the cerium oxide additive is prevented from being plugged in the piping, the range in which the pure water is supplied to the merging piping 34 can be expanded as much as possible. Therefore, it is preferable that the opening and closing valve 34a is provided in the vicinity of the discharge port of the merging pipe 34 (near the downstream end of the water supply pipe 31a), and the discharge pipe 34b is preferably connected to the upstream side of the opening and closing valve 34a and is the merging pipe 34. Near the spit side.
另外，開閉閥34a或排出配管34b，在使用於二氧化矽添加劑之供給前或是供給後之沖洗的純水量較少之情況等，也可如上述實施形態所說明般，不一定要設置。Further, the on-off valve 34a or the discharge pipe 34b may be provided as long as the amount of pure water used for the rinsing of the cerium oxide additive or after the supply is small, as described in the above embodiment.
又，設在二氧化矽添加劑供給配管32b的開閉閥32d，可靠近合流部A、B而配置。存在於開閉閥32d與槽32a之間的二氧化矽添加劑供給配管32b，由於通常不會與外部空氣接觸，所以在此二氧化矽添加劑供給配管32b內的二氧化矽添加劑不會產生析出、附著等。Moreover, the on-off valve 32d provided in the ceria additive supply pipe 32b can be disposed close to the merging portions A and B. The cerium oxide additive supply pipe 32b existing between the opening and closing valve 32d and the groove 32a does not normally come into contact with the outside air, so that the cerium oxide additive in the cerium oxide additive supply pipe 32b does not precipitate or adhere. Wait.
又，在實施形態中，是在透過合流配管34供給了二氧化矽添加劑之後馬上使用純水來將合流配管34洗淨。這是為了將附著而殘留在合流配管34的二氧化矽添加劑洗淨除去。若考慮到此點，則純水的供給時機，宜在結束供給二氧化矽添加劑之後立刻供給純水，但也可從二氧化矽添加劑的供給結束之前就開始供給純水，只要是在二氧化矽添加劑的供給後、殘留在合流配管34的二氧化矽添加劑開始乾燥之前即可。Further, in the embodiment, the condensed pipe 34 is washed with pure water immediately after the cerium oxide additive is supplied through the merging pipe 34. This is to wash away the cerium oxide additive which remains and remains in the merging pipe 34. In consideration of this point, the supply timing of the pure water is preferably supplied to the pure water immediately after the supply of the cerium oxide additive is completed, but the pure water may be supplied from the end of the supply of the cerium oxide additive as long as it is in the oxidizing After the supply of the cerium additive, the cerium oxide additive remaining in the condensing pipe 34 may be dried before it starts to dry.
又，在實施形態中，已說明了在槽21、41、51本身具備有加熱器之例，但也可把循環槽內之磷酸水溶液的配管連接於各槽，在此配管途中設置加熱器，藉此，來將各槽內的磷酸溶液加熱。Further, in the embodiment, the case where the tanks 21, 41, and 51 themselves are provided with a heater has been described. However, the piping of the phosphoric acid aqueous solution in the circulation tank may be connected to each tank, and a heater may be provided in the middle of the piping. Thereby, the phosphoric acid solution in each tank is heated.
又，在實施形態中，是以蝕刻處理裝置為例進行了說明，但只要是使用二氧化矽濃度經管理之磷酸水溶液的處理即可適用。Further, in the embodiment, the etching treatment apparatus has been described as an example, but it is applicable as long as it is a treatment using a phosphoric acid aqueous solution having a controlled concentration of cerium oxide.
以上，已說明了本發明的幾個實施形態，但該等實施形態是作為舉例而提出的，並無意限定發明的範圍。該等新的實施形態，可以以其他各種形態來實施，在不脫離發明要旨的範圍內，進行各種省略、置換、變更。這些實施形態或其變形，皆包含在發明範圍或要旨，並且被包含在記載於申請專利範圍之發明以及與其均等的範圍內。The embodiments of the present invention have been described above, but the embodiments are presented by way of example and are not intended to limit the scope of the invention. The present invention can be implemented in various other forms, and various omissions, substitutions and changes can be made without departing from the scope of the invention. These embodiments and variations thereof are included in the scope of the invention and the scope of the invention as set forth in the appended claims.
〔產業上之可利用性〕 可得到一種即使是使用了二氧化矽添加劑的處理，也可以以適當的二氧化矽濃度執行基板處理的基板處理裝置及基板處理方法。[Industrial Applicability] A substrate processing apparatus and a substrate processing method capable of performing substrate processing with an appropriate cerium oxide concentration even in a treatment using a cerium oxide additive can be obtained.
10、10A、10B‧‧‧基板處理裝置
20‧‧‧加熱貯留部
21、32a、41‧‧‧槽
22、41a‧‧‧加熱器
23‧‧‧二氧化矽濃度檢測部
24、33a‧‧‧供給配管
24a、31b、32d、33b、34a、42c‧‧‧開閉閥
25‧‧‧磷酸濃度檢測部
26‧‧‧液面檢測部
30‧‧‧供給部
31‧‧‧水供給部
31a‧‧‧水供給配管
32‧‧‧二氧化矽添加劑供給部
32b‧‧‧二氧化矽添加劑供給配管
32c、42a、71a‧‧‧泵
33‧‧‧磷酸水溶液供給部
34‧‧‧合流配管
34b‧‧‧排出配管
40‧‧‧緩衝部
41b‧‧‧液面檢測部
42‧‧‧吐出配管
42b‧‧‧過濾器
43‧‧‧循環配管
50‧‧‧再加熱部
60‧‧‧處理部
61‧‧‧處理室
62‧‧‧噴嘴
70‧‧‧回收部
71‧‧‧回收配管
100‧‧‧控制部
A、B、C‧‧‧合流部
W‧‧‧基板10, 10A, 10B‧‧‧ substrate processing device
20‧‧‧heat storage department
21, 32a, 41‧‧‧ slots
22, 41a‧‧‧ heater
23‧‧‧ cerium oxide concentration detection department
24, 33a‧‧‧Supply piping
24a, 31b, 32d, 33b, 34a, 42c‧‧‧ open and close valves
25‧‧‧ Phosphoric acid concentration detection department
26‧‧‧ Liquid level detection department
30‧‧‧Supply Department
31‧‧‧Water Supply Department
31a‧‧‧Water supply piping
32‧‧‧2O2 Additive Supply Department
32b‧‧‧2O2 additive supply piping
32c, 42a, 71a‧‧ ‧ pumps
33‧‧‧Aqueous Phosphate Solution Supply Department
34‧‧‧Confluence piping
34b‧‧‧ discharge piping
40‧‧‧ buffer
41b‧‧‧liquid level detection department
42‧‧‧ spitting piping
42b‧‧‧Filter
43‧‧‧Recycling piping
50‧‧‧Reheating Department
60‧‧‧Processing Department
61‧‧‧Processing room
62‧‧‧Nozzles
70‧‧‧Recycling Department
71‧‧‧Recycling piping
100‧‧‧Control Department
A, B, C‧‧ ‧ confluence
W‧‧‧Substrate
【圖1】 圖1是示意地顯示本發明之第1實施形態的基板處理裝置的說明圖。 【圖2】 圖2是顯示同基板處理裝置中之純水、磷酸水溶液、二氧化矽添加劑的供給時機的說明圖。 【圖3】 圖3是示意地顯示本發明之第2實施形態的基板處理裝置的說明圖。 【圖4】 圖4是示意地顯示本發明之第3實施形態的基板處理裝置的說明圖。[Fig. 1] Fig. 1 is an explanatory view showing a substrate processing apparatus according to a first embodiment of the present invention. Fig. 2 is an explanatory view showing timings of supply of pure water, an aqueous phosphoric acid solution, and a cerium oxide additive in the same substrate processing apparatus. [Fig. 3] Fig. 3 is an explanatory view showing a substrate processing apparatus according to a second embodiment of the present invention. [ Fig. 4] Fig. 4 is an explanatory view showing a substrate processing apparatus according to a third embodiment of the present invention.
10‧‧‧基板處理裝置 10‧‧‧Substrate processing unit
20‧‧‧加熱貯留部 20‧‧‧heat storage department
21、32a、41、51‧‧‧槽 21, 32a, 41, 51‧‧‧ slots
22、41a、52‧‧‧加熱器 22, 41a, 52‧‧‧ heater
23‧‧‧二氧化矽濃度檢測部 23‧‧‧ cerium oxide concentration detection department
24、33a、53‧‧‧供給配管 24, 33a, 53‧‧‧ supply piping
24a、31b、32d、33b、34a、42c‧‧‧開閉閥 24a, 31b, 32d, 33b, 34a, 42c‧‧‧ open and close valves
25‧‧‧磷酸濃度檢測部 25‧‧‧ Phosphoric acid concentration detection department
26‧‧‧液面檢測部 26‧‧‧ Liquid level detection department
30‧‧‧供給部 30‧‧‧Supply Department
31‧‧‧水供給部 31‧‧‧Water Supply Department
31a‧‧‧水供給配管 31a‧‧‧Water supply piping
32‧‧‧二氧化矽添加劑供給部 32‧‧‧2O2 Additive Supply Department
32b‧‧‧二氧化矽添加劑供給配管 32b‧‧‧2O2 additive supply piping
32c、42a、71a‧‧‧泵 32c, 42a, 71a‧‧ ‧ pumps
33‧‧‧磷酸水溶液供給部 33‧‧‧Aqueous Phosphate Solution Supply Department
34‧‧‧合流配管 34‧‧‧Confluence piping
34b‧‧‧排出配管 34b‧‧‧ discharge piping
40‧‧‧緩衝部 40‧‧‧ buffer
41b‧‧‧液面檢測部 41b‧‧‧liquid level detection department
42‧‧‧吐出配管 42‧‧‧ spitting piping
42b‧‧‧過濾器 42b‧‧‧Filter
43‧‧‧循環配管 43‧‧‧Recycling piping
50‧‧‧再加熱部 50‧‧‧Reheating Department
60‧‧‧處理部 60‧‧‧Processing Department
61‧‧‧處理室 61‧‧‧Processing room
62‧‧‧噴嘴 62‧‧‧Nozzles
70‧‧‧回收部 70‧‧‧Recycling Department
71‧‧‧回收配管 71‧‧‧Recycling piping
100‧‧‧控制部 100‧‧‧Control Department
A‧‧‧合流部 A‧‧‧ Confluence Department
W‧‧‧基板 W‧‧‧Substrate
Claims (6)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015195397 | 2015-09-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201721714A true TW201721714A (en) | 2017-06-16 |
| TWI619142B TWI619142B (en) | 2018-03-21 |
Family
ID=58423766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105131687A TWI619142B (en) | 2015-09-30 | 2016-09-30 | Substrate processing apparatus and substrate processing method |
Country Status (5)
| Country | Link |
|---|---|
| JP (2) | JP6935330B2 (en) |
| KR (1) | KR101962080B1 (en) |
| CN (1) | CN108140572B (en) |
| TW (1) | TWI619142B (en) |
| WO (1) | WO2017057727A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI701086B (en) * | 2017-11-15 | 2020-08-11 | 日商斯庫林集團股份有限公司 | Substrate processing method and substrate processing apparatus |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6961058B2 (en) * | 2017-09-28 | 2021-11-05 | 東京エレクトロン株式会社 | Substrate processing equipment and substrate processing method |
| KR102264002B1 (en) | 2017-10-20 | 2021-06-11 | 도쿄엘렉트론가부시키가이샤 | Substrate processing apparatus, substrate processing method and recording medium |
| JP6777704B2 (en) * | 2017-10-20 | 2020-10-28 | 東京エレクトロン株式会社 | Substrate processing equipment, substrate processing method and storage medium |
| JP2020150126A (en) * | 2019-03-13 | 2020-09-17 | 東京エレクトロン株式会社 | Mixer, mixing method and substrate processing system |
| CN111696891B (en) * | 2019-03-15 | 2024-05-03 | 东京毅力科创株式会社 | Substrate processing apparatus, mixing method, and substrate processing method |
| JP7504636B2 (en) | 2020-03-24 | 2024-06-24 | 芝浦メカトロニクス株式会社 | Processing liquid manufacturing apparatus, substrate processing apparatus, processing liquid manufacturing method, and substrate processing method |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3382138B2 (en) * | 1997-08-21 | 2003-03-04 | 富士通株式会社 | Chemical liquid supply device and chemical liquid supply method |
| JPH11186209A (en) * | 1997-12-25 | 1999-07-09 | Dainippon Screen Mfg Co Ltd | Wafer treater |
| TW486392B (en) * | 2000-09-29 | 2002-05-11 | Air Prod & Chem | Solvent blend for use in high purity precursor removal |
| US7806988B2 (en) * | 2004-09-28 | 2010-10-05 | Micron Technology, Inc. | Method to address carbon incorporation in an interpoly oxide |
| JP2007258405A (en) * | 2006-03-23 | 2007-10-04 | Dainippon Screen Mfg Co Ltd | Method and apparatus for substrate treatment |
| JP5058560B2 (en) * | 2006-10-26 | 2012-10-24 | 株式会社平間理化研究所 | Etching solution management device |
| JP2008291312A (en) * | 2007-05-24 | 2008-12-04 | Sumitomo Precision Prod Co Ltd | Substrate processing apparatus |
| JP5035913B2 (en) * | 2008-09-22 | 2012-09-26 | アプリシアテクノロジー株式会社 | Etching solution preparation method, etching method and etching apparatus |
| CN201611648U (en) * | 2009-12-15 | 2010-10-20 | 中芯国际集成电路制造(上海)有限公司 | Wet etching equipment |
| JP2011187891A (en) | 2010-03-11 | 2011-09-22 | Tokyo Electron Ltd | Liquid processing apparatus, liquid processing method, program, and program recording medium |
| JP6087063B2 (en) * | 2012-05-01 | 2017-03-01 | 東京エレクトロン株式会社 | Etching method, etching apparatus and storage medium |
| US9911631B2 (en) | 2013-03-15 | 2018-03-06 | Tel Fsi, Inc. | Processing system and method for providing a heated etching solution |
| JP6302708B2 (en) * | 2013-03-29 | 2018-03-28 | 芝浦メカトロニクス株式会社 | Wet etching equipment |
| JP6502633B2 (en) * | 2013-09-30 | 2019-04-17 | 芝浦メカトロニクス株式会社 | Substrate processing method and substrate processing apparatus |
| TWI578396B (en) * | 2013-12-11 | 2017-04-11 | 斯克林集團公司 | Substrate treatment method and substrate treatment apparatus |
| JP6295107B2 (en) * | 2014-03-07 | 2018-03-14 | 株式会社荏原製作所 | Substrate processing system and substrate processing method |
-
2016
- 2016-09-30 TW TW105131687A patent/TWI619142B/en active
- 2016-09-30 KR KR1020187007628A patent/KR101962080B1/en active IP Right Grant
- 2016-09-30 CN CN201680058403.9A patent/CN108140572B/en active Active
- 2016-09-30 JP JP2017543643A patent/JP6935330B2/en active Active
- 2016-09-30 WO PCT/JP2016/079113 patent/WO2017057727A1/en active Application Filing
-
2021
- 2021-07-09 JP JP2021114513A patent/JP7098800B2/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI701086B (en) * | 2017-11-15 | 2020-08-11 | 日商斯庫林集團股份有限公司 | Substrate processing method and substrate processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108140572B (en) | 2022-12-30 |
| CN108140572A (en) | 2018-06-08 |
| KR20180041725A (en) | 2018-04-24 |
| JP7098800B2 (en) | 2022-07-11 |
| KR101962080B1 (en) | 2019-03-25 |
| JP6935330B2 (en) | 2021-09-15 |
| JPWO2017057727A1 (en) | 2018-07-19 |
| TWI619142B (en) | 2018-03-21 |
| WO2017057727A1 (en) | 2017-04-06 |
| JP2021166307A (en) | 2021-10-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI619142B (en) | Substrate processing apparatus and substrate processing method | |
| TWI692024B (en) | Wet etching device | |
| TWI553888B (en) | Substrate processing apparatus and substrate processing method | |
| TWI616968B (en) | Substrate liquid processing device, method for cleaning substrate liquid processing device and recording medium | |
| US20150020968A1 (en) | Substrate processing apparatus and substrate processing method | |
| JP6320869B2 (en) | Substrate processing apparatus and substrate processing method | |
| JP6022431B2 (en) | Substrate liquid processing apparatus and substrate liquid processing method | |
| US20050263488A1 (en) | Etching system and method for treating the etching solution thereof | |
| JP2015079884A5 (en) | ||
| TWI637435B (en) | Substrate processing device and substrate processing method | |
| JP2013207076A (en) | Processing liquid supply device and processing liquid supply method | |
| JP4813393B2 (en) | Liquid processing apparatus and defoaming method for processing liquid | |
| JP6563351B2 (en) | Substrate processing apparatus, substrate processing method, and storage medium | |
| KR101494969B1 (en) | Cleaning fluid generation apparatus, cleaning fluid generation method, substrate cleaning apparatus and cleaning processing method | |
| CN109192680B (en) | Chemical liquid tank device | |
| JP4018917B2 (en) | Processing method and processing system | |
| JP2022049394A (en) | Process liquid supply device, substrate processing apparatus and process liquid supply method | |
| KR20200144200A (en) | Substrate treatment apparatus | |
| TWI694229B (en) | Liquid heating device and cleaning system | |
| JP2009040656A (en) | Apparatus and method for producing carbonated water, and method of washing electronic member | |
| KR20060015891A (en) | Chemical exhaust equipment of semiconductor product device | |
| JP7171371B2 (en) | etching equipment | |
| TW202238883A (en) | Substrate processing apparatus and substrate processing method | |
| JP2005353523A (en) | Fuel cell system | |
| JP6247100B2 (en) | Drainage treatment apparatus and drainage treatment method |