TW201719360A - Conductive substrate, and method for producing conductive substrate - Google Patents

Abstract

To provide a conductive substrate that suppresses light reflection of a side face of a metal wire. A conductive substrate has an insulating base material, a metal wire disposed on at least one face of the insulating base material, and a blackened layer disposed on top face and side face of the metal wire. The blackened layer disposed on top face and side face of the metal wire makes it possible to suppress light reflection of a side face of the metal wire.

Description

Conductive substrate, method of manufacturing conductive substrate

The present invention relates to a conductive substrate and a method of producing the conductive substrate.

The electrostatic capacitance type touch panel detects positional information of an approaching object on the surface of the panel into an electrical signal by detecting a change in electrostatic capacitance caused by an object approaching the surface of the panel. Since the conductive substrate used for the capacitive touch panel is provided on the surface of the display, the wiring material of the conductive substrate is required to have a low reflectance and is difficult to be visually recognized.

Therefore, as a wiring material used for a capacitive touch panel, a material having a low reflectance and being difficult to be visually recognized is used, and wiring is formed on a transparent substrate or a transparent film. For example, Patent Document 1 discloses a transparent conductive film for a touch panel in which an ITO (Indium Tin Oxide) film is formed as a transparent conductive film on a polymer film.

However, in recent years, a display panel having a touch panel is becoming larger in size, and accordingly, a conductive substrate such as a transparent conductive film for a touch panel is required to have a large area. However, since the resistance value of ITO is high and the signal is deteriorated, there is a problem that it is not suitable for a large panel.

For this reason, for example, as described in Patent Documents 2 and 3, it is being studied to use a metal wiring such as copper instead of ITO. However, since the metal which is a material of the metal wiring has a metallic luster, there is a problem that reflection causes a decrease in visibility of the display.

Therefore, a conductive substrate which is formed on an insulating substrate is being studied. After forming the metal layer, a blackening layer capable of suppressing light reflection on the surface of the metal layer is formed on the upper surface of the metal layer by dry plating or the like, and then the metal layer and the blackening layer are patterned to be in the metal wiring. A blackening layer is formed on the upper surface.

[First technical literature]

[Patent Document 1] JP-A-2003-151358

[Patent Document 2] Special Publication No. 2011-018194

[Patent Document 3] JP-A-2013-069261

However, after the blackening layer is formed on the upper surface of the metal layer, if the metal wiring is formed by patterning the metal layer, since the side portion of the metal wiring is not covered by the blackening layer, there is light reflection. And the visibility of the display will also drop.

In view of the above problems of the prior art, in one aspect of the present invention, an object of providing a conductive substrate that suppresses light reflection on the side surface of a metal wiring is provided.

In order to solve the above problems, an aspect of the invention provides a conductive substrate comprising: an insulating substrate; a metal wiring disposed on at least one surface of the insulating substrate; and a metal wiring disposed on the metal wiring The blackening layer on the upper surface and side.

According to one aspect of the present invention, a light to the side of the metal wiring can be provided A conductive substrate whose reflection is suppressed.

10, 20, 30, 71, 101, 102‧‧‧ conductive substrates

1,11,111,112‧‧‧Insulating substrate

11a, 111a, 112a‧‧‧1st main plane of the insulating substrate

11b, 111b, 112b‧‧‧2nd main plane of the insulating substrate

2, 12, 12A, 12B, 121, 122‧‧‧ metal wiring

12a‧‧‧ Upper surface of metal wiring

12b‧‧‧ side of metal wiring

4, 13, 13A, 13B, 131, 132‧‧‧ blackening layer

50‧‧‧ Sputtering device

51‧‧‧Shell

52‧‧‧Rolling roll

53‧‧‧canned rolls

54a~54d‧‧‧ Sputtered cathode

55‧‧‧Winding roller

56‧‧‧heater

57a, 57b‧‧‧ vacuum pump

58‧‧‧ gas supply unit

581a, 581b‧‧‧ mass flow controller

582a, 582b‧‧‧ valve

59‧‧‧Pressure adjustment valve

60a, 60b‧‧‧ vacuum gauge

61a, 61b‧‧‧ exhaust valve

71‧‧‧Electrically conductive substrate

72‧‧‧Black paper

73‧‧‧White tube

74‧‧‧Axis

75, 76, 77‧‧‧ arrows

711, 712‧‧‧ dotted line

FIGS. 1(A) and 1(B) are explanatory diagrams showing the structure of a blackening layer in the prior conductive substrate and the conductive substrate according to the embodiment of the present invention.

2(A) and 2(B) are explanatory views showing the configuration of a conductive substrate according to an embodiment of the present invention.

Fig. 3 is a structural explanatory view of a conductive substrate according to an embodiment of the present invention.

4(A) and 4(B) are explanatory diagrams showing the structure of a conductive substrate having a mesh wiring according to an embodiment of the present invention.

(A) and (B) are structural explanatory views of a laminated conductive substrate having a mesh wiring according to an embodiment of the present invention.

Fig. 6 is a structural explanatory view of a roll to roll sputtering apparatus.

Fig. 7 is an explanatory view showing a method of evaluating the visibility of the conductive substrate produced in the examples and the comparative examples.

Hereinafter, an embodiment of the conductive substrate, the laminated conductive substrate, the method for producing the conductive substrate, and the method for producing the laminated conductive substrate of the present invention will be described.

(Electrically conductive substrate and laminated conductive substrate)

The conductive substrate of the present embodiment may have an insulating base material, a metal wiring disposed on at least one surface of the insulating base material, and a blackened layer disposed on the upper surface and the side surface of the metal wiring.

Hereinafter, each component included in the conductive substrate of the present embodiment will be described first.

The insulating substrate is not particularly limited, and for example, a transparent substrate such as a resin substrate (resin film) or a glass substrate which can penetrate visible light can be preferably used.

As a material of the resin substrate which can penetrate visible light, for example, a polyamido resin, a polyethylene terephthalate resin, a polyethylene naphthalate resin, or a cycloolefin system can be preferably used. A resin such as a resin, a polyimide resin, or a polycarbonate resin. In particular, as a material of the resin substrate which can penetrate visible light, PET (polyethylene terephthalate), COP (cycloolefin polymer), PEN (polyethylene naphthalate) can be more preferably used. , polyimine and polycarbonate.

The thickness of the insulating base material is not particularly limited, and can be arbitrarily selected depending on the strength, electrostatic capacity, light transmittance, and the like required as the conductive substrate. The thickness of the insulating base material can be, for example, 10 μm or more and 200 μm or less. In particular, when it is used for a touch panel, the thickness of the insulating base material is preferably 20 μm or more and 120 μm or less, and preferably 20 μm or more and 100 μm or less. In the case of use for a touch panel, for example, in the case of use in which the thickness of the entire display is required to be thin, the thickness of the insulating base material is preferably 20 μm or more and 50 μm or less.

It is preferred that the insulating substrate has a high total light transmittance, and for example, the total light transmittance is preferably 30% or more, more preferably 60% or more. When the total light transmittance of the insulating base material is in the above range, for example, when it is used for a touch panel, the visibility of the display can be sufficiently ensured.

Further, the total light transmittance of the insulating base material can be evaluated by the method specified in JIS K 7361-1.

The insulating base material may have a first main plane and a second main plane. In addition, the principal plane as used herein means the plane part of the surface of the insulating base material which has the largest area. Again, the first main level The face and the second principal plane refer to oppositely disposed faces in an insulative substrate.

Next, the metal wiring will be described.

The metal wiring may be disposed on at least one surface of the insulating substrate. Also, it may have a pattern shape corresponding to a desired wiring pattern.

Furthermore, the method of forming the metal wiring is not particularly limited. The metal wiring can be formed, for example, by forming a metal layer on at least one surface of the insulating base material and patterning the metal layer. For this reason, first, a metal wiring is formed by forming a metal layer on at least one surface of an insulating base material and patterning the metal layer.

The material constituting the metal layer is not particularly limited, and a material having electrical conductivity in accordance with the use may be selected. For example, the material constituting the metal layer is preferably Cu and from Ni, Mo, Ta, Ti, V, Cr, Fe, Mn, A copper alloy of at least one metal selected from Co and W, or a material containing copper. Further, the metal layer may be a copper layer made of copper.

The method of forming the metal layer on the insulating base material is not particularly limited. However, in order not to lower the light transmittance of the light, it is preferable that no adhesive is disposed between the insulating base material and the metal layer. That is, the metal layer is preferably formed directly on at least one surface of the insulating substrate. Further, when an adhesion layer is disposed between the insulating base material and the metal layer as will be described later, the metal layer is preferably formed directly on the upper surface of the adhesion layer.

In order to form a metal layer directly on the upper surface of the insulating substrate or the adhesion layer, the metal layer preferably has a metal thin film layer. Further, the metal layer may have a metal thin film layer and a metal plating layer.

For example, a metal thin film layer can be formed on the insulating substrate by dry plating, and the metal thin film layer can be used as a metal layer. According to this, the metal layer can be directly formed on the insulating substrate without the use of an adhesive. Further, as the dry plating method, for example, a sputtering method or an evaporation method or an ion can be preferably used. Plating method, etc.

Further, when the thickness of the metal layer is increased, the metal thin film layer can be used as a power supply layer, and a metal plating layer can be formed by, for example, a plating method which is one of wet plating methods. a metal film layer and a metal layer of a metal plating layer. By providing the metal layer with a metal thin film layer and a metal plating layer, in this case, the metal layer can be directly formed on the insulating substrate without an adhesive.

Here, although the metal layer is formed on the insulating base material as an example, when the adhesive layer is formed between the insulating base material and the metal layer, the adhesion layer may be formed in the same manner. The metal thin film layer, or the metal thin film layer and the metal plating layer, according to which a metal layer can be directly formed on the adhesion layer.

The thickness of the metal layer is not particularly limited, and when the metal layer is used as a wiring, it can be arbitrarily selected depending on the magnitude of the current supplied to the wiring, the wiring width, and the like.

However, when the metal layer is thick, the time required for etching in order to form a metal wiring is long, so that side etching is likely to occur, and there is a problem that it is difficult to form a thin line or the like. For this reason, the thickness of the metal layer is preferably 5 μm or less, more preferably 3 μm or less.

Further, in particular, from the viewpoint of reducing the electric resistance value of the electroconductive substrate so that the electric current can be sufficiently supplied, for example, the thickness of the metal layer is preferably 50 nm or more, more preferably 60 nm or more, still more preferably 150 nm or more.

Further, in the case where the metal layer has the metal thin film layer and the metal plating layer as described above, the total thickness of the metal thin film layer and the thickness of the metal plating layer are preferably in the above range.

When the metal layer is composed of a metal thin film layer or a metal thin film layer and a metal plating layer, the thickness of the metal thin film layer is not particularly limited, and for example, it is preferably 50 nm or more. And below 500nm.

The metal wiring can be formed by patterning the metal layer into a shape corresponding to a desired wiring pattern. The pattern shape of the metal wiring is not particularly limited, and may be a shape corresponding to a wiring pattern required for the conductive substrate.

The method of patterning the metal layer is not particularly limited. For example, after the metal layer is formed on at least one surface of the insulating base material, first, the surface of the metal layer opposite to the surface facing the insulating base material is disposed. A mask having an opening corresponding to the shape of the formed wiring pattern. Metal wiring can then be formed by etching.

The metal wiring can be formed, for example, by patterning a metal layer as described above. For this reason, in the case where the metal layer is composed of a metal thin film layer, the metal wiring may have a patterned metal thin film layer. Further, in the case where the metal layer has a metal thin film layer and a metal plating layer, the metal wiring may have a patterned metal thin film layer and a patterned metal plating layer.

In the case of the metal layer, since the resistance value can be lower than the resistance value of the ITO used as the material of the conductive layer, the resistance value of the conductive substrate can be lowered by providing the metal wiring patterned for the metal layer. .

Thus, the case where the metal layer is formed on at least one surface of the insulating base material and then the metal layer is patterned by patterning the metal layer has been described as an example. However, the method of forming the metal wiring is described. It is not limited to this form. For example, the metal layer may be formed directly on the insulating base material by a printing method or the like without forming a metal layer on the insulating metal layer. Further, the metal wiring may be formed by an additive method, a semi-additive method, or the like.

The metal wiring may have a metal film like the above, for example, as described above. The plurality of layers of the layer and the metal plating may also be composed of one layer.

In the case where the metal wiring is formed by a printing method or another method, the material constituting the metal wiring is also not particularly limited.

For example, a material which can be preferably used as a material constituting the metal layer described above can be preferably used as a material constituting the metal wiring. That is, the material constituting the metal wiring is preferably a copper alloy of at least one or more selected from the group consisting of Cu, Ni, Mo, Ta, Ti, V, Cr, Fe, Mn, Co, and W, or a material containing copper. Further, the metal wiring may be a copper wiring made of copper.

The thickness of the metal wiring is not particularly limited, and is, for example, preferably 5 μm or less, and preferably 3 μm or less.

In addition, the lower limit of the thickness of the metal wiring is not particularly limited, but the thickness of the metal wiring is preferably 50 nm or more, and more preferably 60 nm, from the viewpoint of reducing the resistance value of the conductive substrate so that the current can be sufficiently supplied. More preferably, it is 150 nm or more.

Next, the blackening layer will be described.

The blackening layer can be disposed on the upper surface and the side of the metal wiring.

The structure of the blackened layer of the prior conductive substrate and the blackened layer of the conductive substrate of the present embodiment will be described using FIG. 1(A) and FIG. 1(B). Further, (A) of FIG. 1 and (B) of FIG. 1 show a cross-sectional view of a surface parallel to a lamination direction of each layer in a conductive substrate in which a metal wiring and a blackened layer are laminated on an insulating base material. . 1(A) shows a configuration example of a conventional conductive substrate, and FIG. 1(B) shows a configuration example of the conductive substrate of the present embodiment.

First, a configuration example of a conventional conductive substrate is performed using (A) of FIG. 1 . Description. When a metal wiring is used for a conductive substrate for use in a touch panel or the like, in order to suppress reflection of light on the surface of the metal wiring, the metal wiring 2 disposed on the insulating base material 1 has been studied. A blackening layer 3 is formed on the surface. According to the conventional method for producing a conductive substrate, it is necessary to form a metal layer and a blackening layer on the entire upper surface of the insulating substrate, and then patterning to form a metal wiring and a patterned blackened layer. For this reason, since the side surface portion 2a of the metal wiring 2 is not exposed by the blackening layer 3 and is exposed, the light is reflected. Therefore, when the conductive substrate is placed on the display, there is a problem that the visibility of the display is lowered.

On the other hand, as shown in FIG. 1(B), in the conductive substrate of the present embodiment, the blackened layer 4 is disposed on both the upper surface and the side surface of the metal wiring 2 disposed on the insulating base material 1. That is, the blackened layer 4 can be covered except for the surface of the metal wiring 2 that is in contact with the insulating base material 1. For this reason, it is possible to suppress the reflection of light on the surface of the metal wiring 2 in particular, and when used as a conductive substrate for a touch panel, the visibility of the display can be improved. In addition, in the example of (B) of FIG. 1, the metal wiring 2 is directly disposed on the insulating base material 1, and an adhesive layer may be disposed between the insulating base material 1 and the metal wiring 2. When the adhesion layer is disposed, it is preferable that the adhesion layer is patterned in the same manner as the metal wiring 2, and it is preferable that the portion of the metal wiring 2 other than the surface in contact with the adhesion layer is blackened. Layer 4 is covered.

The method for forming the blackening layer in the conductive substrate of the present embodiment is not particularly limited as long as it can form a blackening layer on the upper surface and the side surface of the metal wiring. For example, the blackening layer is preferably electroless plating. To form.

As a method of forming a blackening layer, a dry plating method has been mainly studied in the past. However, in the case where the blackening layer is formed by the dry plating method, as described above, after the metal layer is formed on the insulating substrate, a blackening layer is formed on the entire upper surface of the metal layer, and then the metal layer is formed. Patterning with the blackening layer. For this reason, the blackened layer cannot be formed in the side portion of the metal wiring in which the metal layer is patterned, and the metal wiring and the blackened layer of the conductive substrate have a cross-sectional structure as shown in FIG. 1(A), for example.

On the other hand, when a blackened layer is formed by electroless plating, a blackened layer can be formed after forming a metal wiring patterned into a desired shape. Then, a blackening layer can be formed on the exposed portion of the metal wiring, that is, the upper surface and the side surface of the metal wiring. Therefore, in the conductive substrate of the present embodiment, the blackening layer is preferably formed by electroless plating as described above.

The material of the blackening layer is not particularly limited, and any material that can suppress light reflection on the surface of the metal wiring can be preferably used. For example, a material having a color such as black which can suppress light reflection on the surface of the metal wiring can be preferably used.

Among them, the blackening layer is preferably formed by electroless plating as described above, and therefore the material of the blackening layer is preferably a material which can be formed by electroless plating.

As described above, the material contained in the blackening layer is not particularly limited, and for example, the blackening layer preferably contains Ni (nickel). In addition, the blackening layer may contain two or more types of elements at the same time, and may include, for example, Ni (nickel) and one or more selected from the group consisting of S (sulfur), Sn (tin), Co (cobalt), and Zn (zinc). Elements.

In particular, the blackening layer preferably contains Ni or Ni-containing selected from the group consisting of Ni, Ni and Sn, Ni and S, Ni and Zn, Ni and S and Sn, Ni and Co and S, and Ni, and Zn and S. Any one of a combination of two or more elements.

Further, the blackening layer may be composed of any one of Ni or a combination of two or more elements containing Ni described above. Further, in addition to the above elements or a combination of two or more elements, other components may be contained.

In the case where the blackening layer is composed of any of the above elements or a combination of two or more elements, the blackening layer can be formed, for example, by electroless plating, and thus may also include inevitable plating solution. Ingredients, etc.

In particular, the blackening layer preferably contains Ni and S. According to the study by the inventors of the present invention, the reason is that when the blackening layer contains both Ni and S, light reflection on the surface of the metal wiring can be suppressed, and light reflection on the conductive substrate can be particularly performed. The rate is suppressed. Further, in the case where the blackening layer contains Ni and S, the blackening layer may be composed of Ni and S, but may contain components other than Ni and S, for example, Co, Sn or Zn as described above. .

The state of the element contained in the blackening layer in the blackening layer is not particularly limited. For example, it can be contained in the blackening layer in a state of retaining the elemental monomer. Further, when the blackening layer contains two or more kinds of elements, an intermetallic compound or another compound may be formed and contained in the blackening layer.

When the blackening layer contains two or more types of elements, the content ratio of the two or more types of elements is not particularly limited, and may be arbitrarily selected depending on the degree of light reflection required for the conductive substrate or the color tone of the blackened layer.

The conductive substrate may be provided with any layer other than the above-described insulating base material, metal wiring, and blackened layer. For example, an adhesive layer can be provided.

The metal layer or the metal wiring may be formed on the insulating substrate as described above, but in the case where the metal layer or the metal wiring is directly formed on the insulating substrate, there is a gap between the insulating substrate and the metal layer or the metal wiring The adhesion is not sufficient. Therefore, when a metal layer or a metal wiring is directly formed on the upper surface of the insulating base material, there is a case where the metal layer or the metal wiring is peeled off from the insulating base material during the manufacturing process or at the time of use.

Therefore, in the conductive substrate of the present embodiment, in order to improve the adhesion between the insulating base material and the metal layer or the metal wiring, an adhesion layer can be disposed on the insulating base material.

By providing an adhesion layer between the insulating base material and the metal layer or the metal wiring, the adhesion between the insulating base material and the metal layer or the metal wiring can be improved, and the metal layer or the metal wiring can be prevented from being insulated from the insulating layer. The material is peeled off.

Further, the adhesion layer can also function as a blackening layer. For this reason, light reflection from the surface of the metal wiring caused by light on the lower surface side of the metal layer or the metal wiring, that is, the insulating substrate side can be suppressed.

The material constituting the adhesion layer is not particularly limited, and may be based on adhesion to an insulating substrate, a metal layer, a metal wiring, a desired degree of light reflection suppression on the surface of the metal wiring, or a relative to the conductive substrate. The selection is made arbitrarily using the degree of stability of the environment (for example, humidity or temperature).

The adhesion layer preferably includes, for example, at least one metal selected from the group consisting of Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. Further, the adhesion layer may further contain one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen.

Further, the adhesion layer may include a metal alloy containing at least two or more metals selected from the group consisting of Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. In this case, the adhesion layer may further contain one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen. In this case, Cu-Ti- can be preferably used as the metal alloy containing at least two or more metals selected from the group consisting of Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. Fe alloy or Cu-Ni-Fe alloy, Ni-Cu alloy, Ni-Zn alloy, Ni-Ti alloy, Ni-W alloy, Ni-Cr alloy, Ni-Cu-Cr alloy.

The method of forming the adhesion layer is not particularly limited, and it is preferably formed by a dry plating method. As the dry plating method, for example, a sputtering method, an ion plating method, a vapor deposition method, or the like can be preferably used. In the case where the adhesion layer is formed by a dry method, it is preferable to use a sputtering method from the viewpoint of easily controlling the film thickness. Further, in the adhesion layer, one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen may be added as described above. In this case, a reactive sputtering method may be more preferably used.

When the adhesion layer contains one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen, the addition of carbon, oxygen, hydrogen, and nitrogen is selected from the atmosphere in the formation of the adhesion layer. A gas of one or more types of elements may be added to the adhesion layer. For example, when carbon is added to the adhesion layer, carbon monoxide gas and/or carbon dioxide gas may be added to the ambient gas during dry plating in advance, and when oxygen is added to the adhesion layer, oxygen may be added in advance. In the case of adding the hydrogen to the adhesion layer in the ambient gas during dry plating, hydrogen and/or water may be added to the ambient gas during dry plating in advance, and when nitrogen is added to the adhesion layer. Nitrogen gas may be added in advance to the ambient gas during dry plating.

A gas containing one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen is preferably added to the inert gas as an ambient gas gas during dry plating. The inert gas is not particularly limited, and for example, argon gas can be preferably used.

By forming the adhesion layer by dry plating as described above, the adhesion between the insulating base material and the adhesion layer can be improved. Further, since the adhesion layer may contain, for example, a metal as its main component, the adhesion to the metal layer or the metal wiring is also high. Therefore, by providing an adhesion layer between the insulating base material and the metal layer or the metal wiring, peeling of the metal layer or the metal wiring can be suppressed.

The thickness of the adhesion layer is not particularly limited, and is preferably, for example, 3 nm or more and 50 nm. Hereinafter, it is preferably 3 nm or more and 35 nm or less, and more preferably 3 nm or more and 33 nm or less.

When the adhesion layer also functions as a blackening layer, that is, when light reflection of the metal layer or the metal wiring is suppressed, the thickness of the adhesion layer is preferably 3 nm or more as described above.

The upper limit of the thickness of the adhesion layer is not particularly limited. However, if it is too thick, the time required for formation or the time required for etching when the adhesion layer is patterned becomes long, which leads to an increase in cost. Therefore, the thickness of the adhesion layer is preferably 50 nm or less, preferably 35 nm or less, and more preferably 33 nm or less as described above.

Next, a configuration example of a conductive substrate will be described.

As described above, the conductive substrate of the present embodiment may have a structure having an insulating base material, a metal wiring, and a blackened layer.

The specific configuration example will be described below based on (A) of FIG. 2 and (B) of FIG. 2 .

(A) of FIG. 2 and (B) of FIG. 2 show a configuration example of the conductive substrate of the present embodiment. In addition, (A) of FIG. 2 is a direction which is perpendicular to the surface on which the metal wiring is disposed on the insulating base material 11, that is, the metal wiring arranged on the insulating base material, and the like, from the upper surface side. The conductive substrate 10 is observed. Fig. 2(B) is a cross-sectional view taken along line A-A' of Fig. 2(A).

The conductive substrate of the present embodiment is, for example, as shown in the conductive substrate 10 shown in FIG. 2(A) and FIG. 2(B), which may be the first main body of the insulating base material 11. The metal wiring 12 is disposed on the plane 11a, and the blackening layer 13 is disposed on the upper surface 12a and the side surface 12b of the metal wiring 12 (see FIG. 2(B)).

Further, in the conductive substrate 10, the metal wiring 12 is formed in a plurality of patterns of a linear shape which is arranged in parallel with the Y-axis in (A) of FIG. 2 and in the X-axis direction. Separated from each other. For this reason, the blackening layer 13 disposed on the upper surface and the side surface of the metal wiring 12 is also a plurality of straight lines arranged parallel to the Y-axis in the drawing and spaced apart from each other in the X-axis direction as shown in FIG. 2(A). Shape pattern.

However, the pattern shape of the metal wiring 12 is not limited to the one shown in FIG. 2(A), and may be a pattern shape corresponding to the wiring pattern required for the conductive substrate. Moreover, the wiring width or the wiring pitch of the metal wiring 12 is not particularly limited, and can be arbitrarily selected in accordance with the performance required for the conductive substrate.

As shown in the conductive substrate 10 shown in FIG. 2(A) and FIG. 2(B), by arranging the blackening layer 13 on the upper surface 12a and the side surface 12b of the metal wiring 12, it is possible to target not only the metal wiring but also the metal wiring. The light of the upper surface 12a of 12 can also suppress the reflection of the light on the surface of the metal wiring 12 with respect to the light incident on the side surface 12b. Therefore, when the conductive substrate 10 is placed on the display surface of the display as the conductive substrate for the touch panel, the visibility of the display can be improved.

As another configuration example of the conductive substrate of the present embodiment, as described above, an adhesion layer may be disposed between the insulating base material 11 and the metal wiring 12.

FIG. 3 shows an example of a cross-sectional structure of a conductive substrate in a case where an adhesion layer is disposed between an insulating base material and a metal wiring.

3 is a cross-sectional view showing the conductive substrate 20 on a surface parallel to the lamination direction of the adhesion layer 21 or the metal wiring 12 disposed on the insulating base material 11, and FIG. 2(A) and FIG. The same parts of (B) are given the same symbols. Furthermore, along the insulating substrate When the conductive substrate 20 is viewed from the upper surface side in the direction perpendicular to the first principal plane 11a of the metal wiring of 11 , that is, when the conductive substrate 20 is observed along the arrow 22 in the figure, Since the adhesion layer is not visible from the outside, the structure is the same as that of FIG. 2(A), and FIG. 3 corresponds to the cross-sectional view taken along line AA' of FIG. 2(A).

In the conductive substrate 20 shown in FIG. 3, the adhesion layer 21 and the metal wiring 12 are laminated on the insulating base material 11. Further, the adhesion layer 21 and the metal wiring 12 are patterned into substantially the same shape, and the blackening layer 13 is disposed on the upper surface and the side surface of the metal wiring 12 and the side surface of the adhesion layer 21.

As shown in the conductive substrate 20 shown in FIG. 3, by providing the adhesion layer 21 between the insulating base material 11 and the metal wiring 12, the adhesion between the insulating base material 11 and the metal wiring 12 can be improved. . Moreover, the reflection of the light incident on the metal wiring 12 from the side of the insulating base material 11 on the surface of the metal wiring 12, that is, the surface of the metal wiring 12 facing the insulating base material 11 can be suppressed. Therefore, when the conductive substrate 20 is placed on the display surface of the display as the conductive substrate for the touch panel, the visibility of the display can be improved.

Thus, an example in which a metal wiring is formed on the first principal plane of the insulating base material is shown, but the present invention is not limited to this embodiment. Metal wiring may be formed on the first principal plane and the second principal plane of the insulating base material.

When a metal wiring is formed on the first principal plane and the second principal plane of the insulating base material, a configuration example of the conductive substrate of the present embodiment will be described below using (A) of FIG. 4 and (B) of FIG. 4 . )Be explained.

(A) of FIG. 4 shows the direction in which the metal wiring or the like disposed on the insulating base material is perpendicular to the first principal plane of the insulating base material 11 and the conductive substrate 30 is observed from the upper surface side. Figure. Furthermore, in order to make the pattern shape of the metal wiring easy to understand, the Also in (A), the metal wiring 12B and the blackening layer 13B which are formed on the second principal plane 11b side which can be seen through the insulating base material 11 are shown. Fig. 4(B) is a cross-sectional view taken along line B-B' of Fig. 4(A).

In the conductive substrate 30 shown in FIG. 4(A) and FIG. 4(B), the metal wiring 12A is disposed on the first principal plane 11a of the insulating base material 11, and the upper surface and the side surface of the metal wiring 12A are disposed. The blackening layer 13A. Moreover, the metal wiring 12B is also disposed on the second principal plane 11b of the insulating base material 11, and the blackening layer 13B is disposed on the upper surface and the side surface of the metal wiring 12B (see FIG. 4(B)).

In (A) of FIG. 4 and (B) of FIG. 4, a configuration example of a conductive substrate in which an adhesion layer is not disposed is shown. However, as described above, a dense structure may be disposed between the insulating base material and the metal wiring. Layered. When the adhesion layer is disposed, an adhesion layer can be disposed between the metal wiring 12A and the insulating base material 11 and/or between the metal wiring 12B and the insulating base material 11. In the case where the adhesion layer is disposed, the adhesion layer is preferably patterned into the same pattern as the metal wiring 12A and the metal wiring 12B, respectively.

In the conductive substrate 30, the metal wiring 12A and the metal wiring 12B are formed in a plurality of linear patterns, and the metal wiring 12A formed on the first principal plane 11a side is arranged to be the Y-axis in (A) of FIG. 4 . Parallel and separated from each other in the X-axis direction. In addition, since the blackened layer 13A is disposed on the upper surface and the side surface of the metal wiring 12A, the metal wiring 12A cannot be seen in (A) of FIG. 4, but the metal wiring 12A is formed in the same manner as the blackening layer 13A. A pattern of a plurality of linear shapes parallel to the Y axis.

Moreover, the metal wirings 12B formed on the second principal plane 11b side are arranged in parallel with the X-axis in FIG. 4(A) and are spaced apart from each other in the Y-axis direction. For this reason, by metal wiring 12A In the metal wiring 12B, the conductive substrate 30 has a structure in which metal wirings are arranged in a mesh shape.

The shape and arrangement of the metal wiring are not limited to those shown in FIG. 4(A), and may be any shape and arrangement. In the conductive substrate for a capacitive touch panel, the change in electrostatic capacitance caused by an object approaching the surface of the panel is detected to convert the position information of the approaching object on the surface of the panel into an electrical signal. . Therefore, when it is used for a capacitive touch panel, it is preferable that the conductive substrate 30 is a conductive substrate having a mesh metal wiring.

In the conductive substrate 30 shown in (A) of FIG. 4 and (B) of FIG. 4, since the blackening layer is formed on the upper surface and the side surface of the metal wiring, not only the metal wirings 12A and 12B can be incident on the metal wirings 12A and 12B. The light on the upper surface suppresses the reflection on the surfaces of the metal wirings 12A and 12B with respect to the light incident on the side. Therefore, when the conductive substrate 30 is used as a conductive substrate for a touch panel and is disposed on the display surface of the display, the visibility of the display can be improved.

As described above, the conductive substrate used in the capacitance type touch panel or the like preferably has a metal wiring arranged in a mesh shape as described above. Moreover, the conductive substrate having the metal wiring arranged in a mesh shape is shown on the first principal plane 11a and the second principal plane 11b of the insulating base material in (A) of FIG. 4 and (B) of FIG. 4 . An example of metal wiring is formed. However, the conductive substrate having the metal wiring arranged in a mesh shape is not limited to this embodiment. For example, by laminating the conductive substrate 10 or the conductive substrate 20 in multiple layers, it is also possible to obtain a metal having a mesh shape. A laminated conductive substrate of wiring.

A case where a laminated conductive substrate having a mesh metal wiring is obtained by using the conductive substrate 10 shown in (A) of FIG. 2 and (B) of FIG. 2 will be described as an example.

The laminated conductive substrate having the mesh metal wiring can be formed as follows In the case where the two conductive substrates 10 are laminated, the metal wiring 12 of one conductive substrate 10 and the metal wiring 12 of the other conductive substrate 10 are left to each other. The way it is layered.

A configuration example in which a conductive substrate having a metal wiring is formed on one principal plane of an insulating substrate to form a conductive substrate having a mesh metal wiring is used, and (A) and FIG. 5 of FIG. 5 are used. (B) for explanation.

(A) of FIG. 5 shows a laminated conductive substrate from the upper surface side in a lamination direction such as a metal wiring disposed on the insulating base material in a direction perpendicular to the first principal plane of the insulating base material 111 (112). 40 diagram for observation. Further, in order to make the pattern shape of the metal wiring easy to understand, the blackening layer 131 which can be seen through the insulating base material 112 is also shown in (A) of FIG. Fig. 5(B) is a cross-sectional view taken along line C-C' of Fig. 5(A).

Each of the conductive substrate 101 and the conductive substrate 102 shown in FIG. 5(B) has the same configuration as that of the conductive substrate 10 shown in FIG. 2 . Specifically, metal wirings 121 and 122 are disposed on the first principal planes 111a and 112a of the insulating base materials 111 and 112, respectively, and the metal wirings 121 and 122 are formed in a plurality of linear patterns. Further, the blackening layers 131 and 132 are disposed on the upper surface and the side surfaces of the metal wirings 121 and 122.

In addition, by laminating the first principal plane 111a of the insulating base material 111 of the conductive substrate 101 and the second principal plane 112b of the insulating base material 112, a laminated conductive substrate can be obtained. In addition, as described above, by laminating the metal wiring 121 of the insulating base material 111 and the metal wiring 122 of the insulating base material 112 at the time of lamination, the arrangement as shown in FIG. 5(A) can be obtained. A laminated conductive substrate that is a mesh metal wiring. In (A) of FIG. 5, the arrangement of the blackening layers 131 and 132 is shown, however, since the blackening layers 131 and 132 are along the metal wiring 121 The metal wiring is formed in the same manner as the surface of the 122.

Further, in the case of (A) of FIG. 5 and (B) of FIG. 5, one conductive substrate 101 may be vertically inverted, and then the second principal plane 111b of the insulating substrate 111 and the other conductive layer may be made. The second principal plane 112b of the insulating base material 112 of the substrate 102 is relatively laminated. In this case, a laminated conductive substrate having the same structure as that of (A) of FIG. 4 and (B) of FIG. 4 can be formed.

In the case of laminating two conductive substrates, the method of fixing the two conductive substrates is not particularly limited, and for example, it can be attached and fixed by using an adhesive or the like.

In (A) of FIG. 5 and (B) of FIG. 5, a configuration example of the laminated conductive substrate in which the adhesion layer is not disposed is exemplified, but as described above, between the insulating substrate and the metal wiring The adhesive layer can be configured. For example, the conductive substrate 20 having the cross-sectional shape shown in FIG. 3 is used instead of the conductive substrate 10 having the cross-sectional shape shown in FIG. 2(B), and the same laminate as described above can be used. A laminated conductive substrate having an adhesion layer between the insulating substrate and the metal wiring is obtained.

Further, it is not necessary to laminate a conductive substrate having the same structure. For example, a conductive substrate having a cross-sectional shape shown in FIG. 2(B) and one conductive substrate shown in FIG. 3 may be laminated. A laminated conductive substrate is formed.

4(A), 4(B), 5(A), and 5(B) show an example in which a plurality of linear metal wirings are arranged in a mesh-like conductive substrate. The shape is not limited to this, and the shape and arrangement of the metal wiring can be set to any shape. For example, in order not to cause an interference pattern between the images of the display, the shape of the metal wiring constituting the mesh metal wiring may not be a linear shape, but may be a line bent into a sawtooth ( Word straight lines and other shapes.

The degree of reflection of light of the conductive substrate and the laminated conductive substrate of the present embodiment is not particularly limited. For example, the average reflectance (positive reflectance) of light having a wavelength of 400 nm or more and 700 nm or less is preferably 35% or less, and more preferably 30% or less, and even more preferably 20% or less. When the average reflectance of light having a wavelength of 400 nm or more and 700 nm or less is 35% or less, for example, even when used as a conductive substrate for a touch panel, the visibility of the display is hardly lowered. Therefore, it is preferred.

The measurement of the reflectance can be carried out by irradiating the blackened layer with light. When the reflectance measurement is performed on the conductive substrate shown in (B) of FIG. 2 as an example, the surface 13a of the blackened layer 13 can be irradiated with light and measured. In the measurement, for example, light having a wavelength of 400 nm or more and 700 nm or less is irradiated onto the surface 13a of the blackening layer 13 of the conductive substrate at intervals of 1 nm, and the average value of the measured values can be used as the average value. The reflectance of the conductive substrate.

Further, in the surface of the blackened layer of the conductive substrate and the laminated conductive substrate of the present embodiment, the numerical value of the lightness (L*) in the L*a*b* color system is preferably small. The reason for this is that the smaller the numerical value of lightness (L*) is, the less obvious the blackening layer is, and the lightness (L*) of the surface of the blackening layer is preferably 65 or less, preferably 60 or less, and more preferably 50 or less.

In the conductive substrate described above and the laminated conductive substrate using the conductive substrate, a blackened layer is disposed on the upper surface and the side surface of the metal wiring. For this reason, light reflection on the surface of the metal wiring can be suppressed. Moreover, since the metal wiring is disposed, the resistance value of the conductive substrate and the laminated conductive substrate can be reduced.

(Method for Producing Conductive Substrate and Method for Manufacturing Multilayer Conductive Substrate)

Next, a configuration example of a method of manufacturing a conductive substrate of the present embodiment will be described.

The method for producing a conductive substrate of the present embodiment may have the following steps.

A metal wiring forming step of forming a metal wiring on at least one surface of the insulating base material.

A blackening layer forming step of forming a blackening layer on the upper surface and the side surface of the metal wiring.

Hereinafter, a method of manufacturing the conductive substrate of the present embodiment will be described, and the matters other than those described below may be the same as those of the above-described conductive substrate, and thus the description thereof will be omitted.

The insulating base material used for the metal wiring forming step can be prepared in advance. The type of the insulating base material to be used is not particularly limited, and as described above, a resin substrate (resin film) or a glass substrate which can penetrate visible light can be preferably used. Further, the insulating substrate may be previously cut into an arbitrary size or the like as needed.

Further, in the metal wiring forming step, metal wiring can be formed on at least one surface of the insulating base material.

In the metal wiring forming step, the method of forming the metal wiring is not particularly limited, and the metal wiring forming step may have, for example, the following steps.

A metal layer forming step of forming a metal layer on at least one surface of the insulating substrate.

The metal layer is patterned to form a patterning step of the metal wiring.

Here, the metal layer forming step will be described first. In the metal layer forming step, a metal layer may be formed on at least one surface of the insulating substrate.

Further, the metal layer preferably has a metal thin film layer as described above. Further, the metal layer may have a metal thin film layer and a metal plating layer. To this end, the metal layer forming step may have a metal thin film layer forming step of forming a metal thin film layer by, for example, dry plating. Moreover, the metal layer forming step may also have There is a metal thin film layer forming step of forming a metal thin film layer by dry plating, and a metal plating layer forming step of forming a metal plating layer by using the metal thin film layer as a power supply layer and using a plating method which is one of wet plating methods.

The dry plating method used in the step of forming the metal thin film layer is not particularly limited, and for example, a vapor deposition method, a sputtering method, an ion plating method, or the like can be used. Further, as the vapor deposition method, a vacuum deposition method can be preferably used. As the dry plating method used in the metal thin film layer forming step, in particular, from the viewpoint of easily controlling the film thickness, a sputtering method is preferably used.

In the case where the metal thin film layer is formed by sputtering, for example, it can be preferably formed using a roll-to-roll sputtering apparatus.

A method of forming a metal thin film layer will be described by taking a case where the roll-to-roll sputtering apparatus 50 is used as an example.

FIG. 6 shows a configuration example of the roll-to-roll sputtering apparatus 50.

The roll-to-roll sputtering apparatus 50 has a casing 51 which can constitute a part of the components.

The shape of the casing 51 in FIG. 6 is a rectangular parallelepiped shape. However, the shape of the casing 51 is not particularly limited, and it may be designed to have an arbitrary shape according to the apparatus, the installation place, the pressure resistance performance, and the like stored therein. For example, the shape of the housing 51 may also be a cylindrical shape.

However, in order to remove the residual gas irrespective of formation at the start of formation, the inside of the casing 51 is preferably reduced in pressure to 10 ^-3 Pa or less, preferably to 10 ^-4 Pa or less. Further, it is not necessary to reduce the pressure inside the casing 51 to the above pressure, and it is also possible to reduce only the region on the lower side in the drawing in which the can roll 53 to be described later is placed, to which sputtering is performed. The above pressure.

Configurable in the housing 51: for unwinding the substrate for forming the metal thin film layer The roller 52, the can roller 53, the sputtering cathodes 54a to 54d, the winding roller 55, and the like. Further, in addition to the above-described rollers, a guide roller, a heater 56, and the like may be arbitrarily provided on the transport path of the substrate on which the metal thin film layer is formed.

The take-up roller 52, the can roller 53, the take-up roller 55, and the like can be powered by a servo motor. The take-up roll 52 and the take-up roll 55 can be configured to maintain the tension balance of the substrate on which the metal thin film layer is formed by torque control based on a powder clutch or the like.

The structure of the can roller 53 is not particularly limited, and it is preferably configured such that, for example, it is treated with hard chromium plating on its surface, and circulation of a refrigerant or a warm medium supplied from the outside of the casing 51 is performed inside. To adjust the temperature to a roughly constant temperature.

The sputtering cathodes 54a to 54d are preferably magnetron electrode type and disposed opposite to the can roller 53. The size of the sputtering cathodes 54a to 54d is not particularly limited, and the thickness of the base material forming the metal thin film layer of the sputtering cathodes 54a to 54d in the width direction is preferably larger than the width of the substrate on which the metal thin film layer is formed.

After the substrate on which the metal thin film layer is formed is transferred into the roll-to-roll sputtering apparatus 50 as a roll-to-roll vacuum film forming apparatus, the sputtering cathodes 54a to 54d opposed to the can roller 53 are formed. Metal film layer.

In the case where a metal thin film layer is formed using the roll-to-roll sputtering apparatus 50, a target corresponding to the formed composition is attached to the sputtering cathodes 54a to 54d. Thereafter, after evacuating the apparatus on which the substrate for forming the metal thin film layer is placed on the take-up roll 52 by using the vacuum pumps 57a and 57b, a sputtering gas such as argon gas can be introduced into the casing 51 through the gas supply unit 58. . The structure of the gas supply unit 58 is not particularly limited, and may include a gas storage tank not shown. Further, it is also possible to configure a mass flow rate between the gas storage tank and the casing 51 in accordance with the gas type. Controllers (MFC) 581a and 581b and valves 582a and 582b control the amount of supply of each gas into the housing 51. An example in which two sets of mass flow controllers and valves are provided is shown in Fig. 6. However, the number set is not particularly limited, and the number to be set may be selected depending on the type of gas used. When the sputtering gas is supplied into the casing 51, it is preferable to adjust the flow rate of the sputtering gas and the degree of opening of the pressure regulating valve 59 provided between the vacuum pump 57b and the casing 51 to maintain the inside of the apparatus at, for example, 0.13. Film formation was carried out under the conditions of Pa or more and 1.3 Pa or less.

In this state, the substrate can be transported by the winding roller 52 at a speed of, for example, 1 m or more and 20 m or less per minute, and power can be supplied from the sputtering DC power source connected to the sputtering cathodes 54a to 54d to perform sputtering. Discharge. According to this, the formation of the desired metal thin film layer can be continuously performed on the substrate.

Further, the roll-to-roll sputtering apparatus 50 may be provided with any part other than the above parts. For example, as shown in FIG. 6, vacuum gauges 60a and 60b or exhaust valves 61a and 61b for measuring the degree of vacuum in the casing 51 may be provided.

Next, the metal plating layer forming step will be described. The conditions of the metal plating layer forming step of forming the metal plating layer by the wet plating method, that is, the conditions of the plating treatment are not particularly limited, and various conditions in the usual methods can be employed. For example, the metal plating layer can be formed by supplying the substrate on which the metal thin film layer is formed to a plating bath in which the metal plating solution is placed, and controlling the current density or the transport speed of the substrate.

Next, the patterning step will be described.

In the patterning step, metal wiring can be formed by patterning the metal layer formed in the metal layer forming step.

The method of patterning the metal layer is not particularly limited, and may be used in any order. Implementation.

For example, the patterning step can have a mask configuration step and an etch step. In the mask configuration step, a mask having a desired pattern may be disposed on the metal layer. Thereafter, in the etching step, the etching liquid can be supplied to the upper surface of the metal layer, that is, the side on which the mask is disposed.

The etching liquid used in the etching step is not particularly limited, and may be arbitrarily selected depending on the material constituting the metal layer.

Further, in the case where the adhesion layer forming step is carried out as will be described later, in the etching step, the adhesion layer may be etched in addition to the metal layer. In this case, the etching liquid for etching the metal layer may be the same as or different from the etching liquid for etching the adhesion layer. The etching liquid can be arbitrarily selected depending on the material constituting the metal layer and the material constituting the adhesion layer.

Further, the pattern formed in the patterning step is not particularly limited. For example, the metal layer may be patterned so as to be a metal wiring of a plurality of linear patterns. In the case of patterning a metal layer into a metal wiring of a plurality of linear patterns, as shown in FIG. 2(A) and FIG. 2(B), the metal wirings 12 may be parallel to each other and patterned apart from each other. .

The case where the metal wiring forming step has the metal layer forming step and the patterning step has been described as an example. However, the metal wiring forming step is not limited to this embodiment.

For example, a metal wiring can be formed on a insulating substrate by a printing method or the like. Further, metal wiring can be formed by an additive method, a semi-additive method, or the like.

For example, in the case of forming a metal wiring by a printing method, the metal wiring forming step may have a metal wiring printing step of printing a metal wiring on at least one surface of the insulating substrate. Further, as the printing method at this time, for example, a screen print method or an inkjet print method may be employed.

Moreover, when the metal wiring is formed by another method such as an additive method, the metal wiring forming step may have a specific step corresponding to the method of forming the metal wiring.

Next, the blackening layer forming step will be described.

In the blackening layer forming step, a blackening layer may be formed on the upper surface and the side surface of the metal wiring. The method of forming the blackening layer on the upper surface and the side surface of the metal wiring is not particularly limited, and for example, it is preferable to form a blackening layer by electroless plating.

By forming the blackened layer by electroless plating, the blackened layer can be easily formed on the upper surface and the side surface of the metal wiring formed by patterning the metal layer.

The composition of the plating solution to be used in the case of forming the blackening layer by electroless plating is not particularly limited, and a plating solution containing a material constituting the blackened layer formed can be used.

As described above, the material contained in the blackening layer is not particularly limited, and for example, the blackening layer preferably contains Ni (nickel). In addition, the blackening layer may contain two or more types of elements at the same time, and may include, for example, Ni (nickel) and one or more selected from the group consisting of S (sulfur), Sn (tin), Co (cobalt), and Zn (zinc). Elements.

The blackening layer particularly preferably contains an element selected from Ni, Ni and Sn, Ni and S, Ni and Zn, Ni and S and Sn, Ni and Co and S, and Ni, and Zn and S, or two or more elements. combination.

In particular, the blackening layer preferably contains Ni and S. The reason for this is that, in the case where the blackening layer contains Ni and S, the inventors of the present invention have high performance for suppressing light reflection on the surface of the metal wiring, and can particularly reflect the light reflectance of the conductive substrate. Ground suppression. Further, in this case, components other than Ni and S may be contained, and for example, Sn, Co, Zn, or the like may be contained.

Moreover, the method for producing a conductive substrate of the present embodiment may have any step. For example, when an adhesion layer is disposed between the insulating base material and the metal wiring, an adhesion layer forming step of forming an adhesion layer on the surface of the insulating base material on which the metal wiring is formed can be performed. In the case where the adhesion layer forming step is performed, the metal wiring forming step may be performed after the adhesion layer forming step. Further, in the case of performing the adhesion layer forming step, in the metal wiring forming step, the metal layer or the metal wiring may be formed on the substrate on which the adhesion layer is formed on the insulating substrate in this step.

When the adhesion layer is formed, the adhesion layer may be formed on the first main plane and/or the second main plane of the insulating base material.

The material constituting the adhesion layer is not particularly limited, and may be based on an adhesion force with an insulating base material, a metal layer, a metal wiring, a degree of light reflection suppression on the surface of the metal wiring, and an environment in which the conductive substrate is used (for example, The degree of stability of humidity or temperature) is arbitrarily selected. The material which can be preferably used as the material constituting the adhesion layer is as described above, and the description thereof is omitted here.

The method of forming the adhesion layer is not particularly limited, and for example, it can be formed by a dry plating method. As the dry plating method, for example, a sputtering method, an ion plating method, a vapor deposition method, or the like can be preferably used. In the case where the adhesion layer is formed by the dry method, it is preferable to use a sputtering method from the viewpoint of easy control of the film thickness. Further, as described above, one or more elements selected from carbon, oxygen, hydrogen, and nitrogen may be added to the adhesion layer. In this case, a reactive sputtering method can be more preferably used.

When the adhesion layer contains one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen, the addition of carbon, oxygen, hydrogen, and nitrogen is selected from the atmosphere in the formation of the adhesion layer. A gas of one or more types of elements may be added to the adhesion layer. For example, in close contact When carbon is added to the layer, carbon monoxide gas and/or carbon dioxide gas may be added to the ambient gas during dry plating in advance, and when oxygen is added to the adhesion layer, oxygen may be added to the dry plating in advance. In the case of adding hydrogen to the adhesion layer in the ambient gas, hydrogen and/or water may be added to the ambient gas during dry plating in advance, and when nitrogen is added to the adhesion layer, nitrogen may be added in advance. In the ambient gas during dry plating.

A gas containing one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen is preferably added to the inert gas as an ambient gas gas during dry plating. The inert gas is not particularly limited, and for example, argon gas can be preferably used.

When the adhesion layer is formed by a reactive sputtering method, a target containing a metal constituting the adhesion layer can be used as the target. In the case where the adhesion layer includes an alloy, the target material may be used in accordance with each metal contained in the adhesion layer to form an alloy on the surface of the film formation body such as an insulating substrate, or may be used in advance. A target in which the metal contained in the layer is alloyed.

By forming the adhesion layer by dry plating as described above, the adhesion between the insulating base material and the adhesion layer can be improved. Further, since the adhesion layer may contain, for example, a metal as its main component, the adhesion to the metal layer or the metal wiring is also high. Therefore, by providing an adhesion layer between the insulating base material and the metal layer or the metal wiring, peeling of the metal layer can be suppressed.

The adhesion layer can be preferably formed, for example, by using the roll-to-roll sputtering apparatus 50 shown in FIG.

The structure of the roll-to-roll sputtering apparatus is as described above, and the description thereof is omitted here.

In the case where the roll-to-roll sputtering apparatus 50 is used to form an adhesion layer, the metal target constituting the adhesion layer is mounted on the sputtering cathodes 54a to 54d, and the substrate forming the adhesion layer, for example, an insulating substrate. It is disposed on the take-up roller 52. Then, the inside of the apparatus (for example, inside the casing 51) is evacuated using vacuum pumps 57a and 57b. Thereafter, a sputtering gas such as argon gas is supplied to the gas supply unit 58 is introduced into the casing 51. At this time, it is preferable to adjust the flow rate of the sputtering gas and the degree of opening of the pressure regulating valve 59 provided between the vacuum pump 57b and the casing 51 so as to maintain a pressure of, for example, 0.13 Pa or more and 13 Pa or less in the apparatus, and here. An adhesive layer is formed under the conditions.

In this state, the substrate is transported from the winding roller 52 at a speed of 0.5 m or more and 10 m or less per minute, for example, and power is supplied from a DC power source for sputtering connected to the sputtering cathodes 54a to 54d to perform sputtering discharge. . Accordingly, the desired adhesion layer can be continuously formed on the substrate.

By forming the adhesion layer by dry plating as described above, the adhesion between the insulating base material and the adhesion layer can be improved. Further, since the adhesion layer may contain, for example, a metal as its main component, the adhesion to the metal layer or the metal wiring is also high. Therefore, by providing an adhesion layer between the insulating base material and the metal layer or the metal wiring, peeling of the metal layer can be suppressed.

Further, in the case where the adhesion layer forming step is performed, after the adhesion layer forming step is performed, the above-described metal wiring forming step can be carried out.

When the adhesion layer is formed, the adhesion layer is preferably patterned in the pattern shape of the metal wiring. However, the timing of patterning the adhesion layer is not particularly limited.

For example, in the case where a metal layer is formed in the metal wiring forming step and the metal layer is patterned, when the metal layer is patterned, the adhesion layer may be simultaneously patterned.

Further, for example, after a metal wiring having a specific pattern is formed on the adhesion layer, the metal wiring may be used as a mask to pattern the adhesion layer.

Further, it is also possible to produce a laminated conductive substrate in which a plurality of conductive substrates described above are laminated. The method for producing a laminated conductive substrate may have a lamination step of laminating a plurality of conductive substrates obtained by the above-described method for producing a conductive substrate.

In the lamination step, for example, a plurality of patterned conductive substrates shown in (A) of FIG. 2 and (B) of FIG. 2 can be laminated. Specifically, as shown in FIG. 5 (A) and FIG. 5 (B), the first principal plane 111a of the insulating substrate 111 of one conductive substrate 101 and the other conductive substrate 102 can be used. The second principal plane 112b of the insulating base material 112 is laminated so as to be laminated.

After lamination, the two conductive substrates 101 and 102 can be fixed by, for example, an adhesive.

Further, the conductive substrate 101 may be vertically inverted, and then the second principal plane 111b of the insulating substrate 111 of the electrical substrate 101 and the second insulating substrate 112 of the other conductive substrate 102 may be The main plane 112b is laminated in the opposite direction.

In the case of the laminated conductive substrate having the mesh wiring, in the laminating step, as shown in (A) of FIG. 5 and (B) of FIG. 5, a conductive substrate 101 may be formed in advance. The metal wiring 121 is laminated so as to intersect with the metal wiring 122 previously formed on the other conductive substrate 102.

In (A) of FIG. 5 and (B) of FIG. 5 , an example in which a metal wiring which is patterned into a linear shape is formed to form a mesh wiring (wiring pattern) is shown, but the configuration is not limited thereto. The shape of the metal wiring constituting the wiring pattern may be any shape. For example, in order to prevent interference fringes between the images of the display, the wiring shapes constituting the mesh wiring pattern may be various shapes such as a line (zigzag line) curved in a zigzag shape.

According to the conductive substrate obtained by the method for producing a conductive substrate of the above-described embodiment, since the blackening layer is disposed on the upper surface and the side surface of the metal wiring, light reflection on the surface of the metal layer can be suppressed. For this reason, even on the display surface of the display In the case of the display, the deterioration of the visibility of the display can also be suppressed.

The same applies to the laminated conductive substrate produced by using the conductive substrate obtained by the method for producing a conductive substrate of the present embodiment.

[Examples]

The specific examples and comparative examples are described below, but the present invention is not limited to the examples.

(1) Evaluation method

First, an evaluation method of the obtained conductive substrate will be described.

(observation of blackening layer shape)

As will be described later, in the following examples, the cross-sectional form of the line AA' of FIG. 2 (A) and the line of FIG. 2 (A) is the conductivity of FIG. 3 when viewed from the upper surface. Substrate. For this reason, the produced conductive substrate was cut along the line AA' of FIG. 2(A), and the cross section was observed using a scanning electron microscope (manufactured by JEOL Ltd., model: JSM-7001F). . Further, it was confirmed whether or not a blackened layer was formed on the upper surface and the side surface of the metal wiring.

Further, in the comparative example, a metal wiring having a pattern of a plurality of linear shapes was formed on one surface of the insulating base material. Therefore, one surface of the insulating base material corresponding to the line AA' of FIG. 2(A) and a surface perpendicular to the linear direction of the metal wiring pattern are cut, and scanning electrons are used for the cross section. The microscope was observed.

(evaluation of visibility)

The evaluation method of visibility is demonstrated using FIG.

The conductive substrate 71 produced in the following examples and comparative examples was placed on a black paper 72. Furthermore, at this time, the metal wiring and the blackening layer are formed on the conductive substrate. The first principal plane is the upper surface, that is, the second principal plane on the opposite side of the first principal plane is placed so as to face the black paper 72. Moreover, the conductive substrate 71 was irradiated with light using a three-wavelength daylight white lamp tube 73 so that the illuminance of the surface of the conductive substrate 71 was 2000 lm.

In the state of light irradiation, the conductive substrate 71 and the black paper 72 are moved by 80 degrees to the left and right along the arrow 75 or the arrow 76 with the axis 74 in the figure as a rotation axis, so that the conductive substrate 71 is made. The bottom surface moves to the position of the broken lines 711 and 712 in the figure. The metal wiring was observed during the movement of the conductive substrate 71 and the black paper 72.

Further, the shaft 74 as the rotating shaft is parallel to the direction perpendicular to the paper surface, passes through the center of the conductive substrate 71 in the width direction, and the bottom surface of the conductive substrate 71.

In the above evaluation, when the conductive substrate 71 is horizontally placed, the conductive substrate 71 is observed along a straight line parallel to the normal direction of the first principal plane of the conductive substrate 71, that is, along the arrow 77 in the drawing.

The evaluation is performed by three people. If three people can see the metal wiring, the evaluation is ×. If one or two people can see the metal wiring, the evaluation is △. If the number of people who can see the metal wiring is 0, Then the evaluation is ○.

(Average reflectance of light having a wavelength of 400 nm or more and 700 nm or less)

The measurement was carried out by setting an ultraviolet-visible spectrophotometer (manufactured by Shimadzu Corporation, model: UV-2600) in a reflectance measuring unit.

The surface of the blackened layer of the conductive substrate produced in the following examples and comparative examples was subjected to a wavelength of 400 nm or more at an interval of 1 nm at an incident angle of 5° and a light receiving angle of 5°. Irradiation of light of 700 nm or less and measurement of a regular reflectance; the average value thereof is an average reflection of light having a wavelength of 400 nm or more and 700 nm or less of the conductive substrate Rate (positive reflectance).

(lightness)

The surface of the blackened layer of the conductive substrate produced in the following examples and the comparative examples was subjected to wavelengths at intervals of 1 nm using an ultraviolet-visible spectrophotometer (manufactured by Shimadzu Corporation, model: UV-2600). The light was measured by irradiation of light of 400 nm or more and 700 nm or less.

(2) Preparation conditions and evaluation results of the sample

As an example and a comparative example, a conductive substrate was produced under the conditions described below, and was evaluated by the above-described evaluation method.

[Example 1]

(Adhesion layer forming step)

An insulating base material made of polyethylene terephthalate resin having a width of 500 mm and a thickness of 100 μm was provided on the take-up roll 52 of the roll-to-roll sputtering apparatus 50 shown in Fig. 6 . In addition, the total light transmittance of the transparent base material made of polyethylene terephthalate resin used as a transparent base material is evaluated by the method prescribed by JIS K 7361-1, and it is known. It is 97%.

Further, an adhesive layer is formed on one principal plane of the insulating base material using the roll-to-roll sputtering apparatus 50. As the adhesion layer, a Ni-Cu alloy layer containing oxygen was formed.

The conditions for forming the adhesion layer will be described.

A nickel-copper alloy target containing 65 wt% of nickel and 35 wt% of copper was attached to the sputter cathodes 54a to 54d of the roll-to-roll sputtering apparatus 50 shown in Fig. 6.

The heater 56 of the roll-to-roll sputtering apparatus 50 is heated to 100 ° C to heat the insulating base material, thereby removing moisture contained in the insulating base material.

Next, after the inside of the casing 51 is exhausted to 1 × 10 ^-4 Pa, argon gas and oxygen gas are introduced into the casing 51. Argon gas and oxygen gas were supplied into the casing 51 so that the pressure inside the casing 51 became 2 Pa.

Moreover, the insulating base material is conveyed from the winding roller 52 at a speed of 2 m per minute, and electric power is supplied from the sputtering DC power source connected to the sputtering cathodes 54a to 54d to perform sputtering discharge, and the insulating substrate is provided. The desired adhesion layer is continuously formed on the upper side. By this operation, an adhesion layer having a thickness of 20 nm was formed on one principal plane of the insulating base material.

(Metal wiring forming step)

In the metal wiring forming step, a metal layer forming step and a patterning step are performed. Further, in the metal layer forming step, a metal thin film layer forming step and a metal plating layer forming step are performed.

First, the metal thin film layer forming step will be described.

In the metal thin film layer forming step, a metal thin film layer is formed on the adhesion layer by the roll-to-roll sputtering apparatus 50. A copper thin film layer is formed as a metal thin film layer.

In the metal thin film layer forming step, a copper target is connected to the sputtering cathodes 54a to 54d of the roll-to-roll sputtering apparatus 50 shown in FIG. 6, and a metal thin film layer is formed, and as a substrate, an adhesive layer is used. In the forming step, an adhesion layer is formed on the insulating substrate.

The conditions for forming the metal thin film layer were carried out in the same manner as the adhesion layer forming step except for the following two points and the fact that the target was changed as described above.

After the inside of the casing 51 was evacuated to 1 × 10 ^-4 Pa, argon gas was introduced and the pressure in the casing 51 was adjusted to a point of 1.3 Pa.

The point of the copper thin film layer of the metal thin film layer was formed so as to have a film thickness of 150 nm.

Next, in the metal plating layer forming step, copper plating is formed as a metal plating layer. Floor. A copper plating layer having a thickness of 2.0 μm was formed by electroplating.

Next, the patterning step will be described.

A mask is formed on the upper surface of the metal layer formed in the metal layer forming step, that is, on the surface opposite to the surface of the metal layer facing the insulating substrate (mask arrangement step).

At this time, an opening is formed in the mask, and thus, in the case where etching is performed, the adhesion layer and the metal layer may leave a plurality of linear patterns parallel to each other as shown in FIG. 2(A).

Further, by supplying the etching liquid from the upper surface of the mask, the metal layer and the adhesion layer are etched (etching step).

Further, the metal wiring formed by etching the metal layer was formed into a plurality of linear patterns as described above, and each linear pattern was formed to have a width of 3 μm and a length of 500 mm. Further, the width between the adjacent straight line patterns was 0.2 mm.

(blackening layer forming step)

As the plating solution, a black electroless plating solution prepared by containing Ni and Sn and having a weight ratio of Ni and Sn in the plating solution of Ni:Sn=3:1 is used, and electroless plating is used for metal wiring. A blackening layer having a thickness of 60 nm was formed on the upper surface and the side surface.

By the above steps, the structure is observed in the direction perpendicular to the first principal plane 11a which is the surface on which the metal wiring or the like is disposed on the insulating base material, and the conductive substrate is observed from the upper surface side of the insulating base material. 2(A) and a cross-sectional view taken along line AA' of FIG. 2(A) are conductive substrates of the structure of FIG. 3.

The obtained conductive substrate was observed for the above-described blackening layer shape, evaluated for visibility, and average reflectance and brightness of light having a wavelength of 400 nm or more and 700 nm or less. evaluation of.

Observation of the shape of the blackened layer confirmed that a blackened layer was formed on the upper surface and the side surface of the metal wiring. Other evaluation results are shown in Table 1.

Further, another conductive substrate having the same structure was produced by the same procedure as the method described so far.

Moreover, the two conductive substrates produced were laminated as shown in FIG. 5 (A) and FIG. 5 (B), and the two conductive substrates were fixed with an adhesive to form a laminated conductive substrate. Further, in (A) of FIG. 5 and (B) of FIG. 5, an example in which an adhesion layer is not provided is shown. However, in the present embodiment, between the insulating base material 111 and the metal wiring 121 and in insulation An adhesion layer having the same pattern as the metal wiring 121 and the metal wiring 122 is disposed between the substrate 112 and the metal wiring 122.

[Example 2]

In the blackening layer forming step, a conductive substrate was produced in the same manner as in Example 1 except that the plating solution was changed.

As the plating solution, an electroless plating solution containing Ni was used.

The obtained conductive substrate was subjected to observation of the above-described blackening layer shape, evaluation of visibility, and evaluation of average reflectance and brightness of light having a wavelength of 400 nm or more and 700 nm or less.

Observation of the shape of the blackened layer confirmed that a blackened layer was formed on the upper surface and the side surface of the metal wiring. Other evaluation results are shown in Table 1.

Further, another conductive substrate having the same structure was produced in the same manner, and a laminated conductive substrate was produced in the same manner as in Example 1 using the two conductive substrates.

[Example 3]

A conductive substrate was produced in the same manner as in Example 1 except that the plating solution was changed in the blackening layer forming step.

As the plating solution, a black electroless plating solution prepared by containing Ni and S and having a weight ratio of Ni and S in the plating solution of Ni:S=5:1 was used.

The obtained conductive substrate was subjected to observation of the above-described blackening layer shape, evaluation of visibility, and evaluation of average reflectance and brightness of light having a wavelength of 400 nm or more and 700 nm or less.

Observation of the shape of the blackened layer confirmed that a blackened layer was formed on the upper surface and the side surface of the metal wiring. Other evaluation results are shown in Table 1.

Further, another conductive substrate having the same structure was produced in the same manner, and a laminated conductive substrate was produced in the same manner as in Example 1 using the two conductive substrates.

[Example 4]

A conductive substrate was produced in the same manner as in Example 1 except that the plating solution was changed in the blackening layer forming step.

As the plating solution, a black electroless plating solution prepared by containing Ni, S, and Sn and having a weight ratio of Ni, S, and Sn in the plating solution of 5:1:2 was used.

The obtained conductive substrate was subjected to observation of the above-described blackening layer shape, evaluation of visibility, and evaluation of average reflectance and brightness of light having a wavelength of 400 nm or more and 700 nm or less.

Observation of the shape of the blackened layer confirmed that a blackened layer was formed on the upper surface and the side surface of the metal wiring. Other evaluation results are shown in Table 1.

Further, another conductive substrate having the same structure was produced in the same manner, and a laminated conductive substrate was produced in the same manner as in Example 1 using the two conductive substrates.

[Example 5]

A conductive substrate was produced in the same manner as in Example 1 except that the plating solution was changed in the blackening layer forming step.

As the plating solution, a black electroless plating solution prepared by containing Ni, S, and Co and having a weight ratio of Ni, S, and Co in the plating solution of Ni:S:Co=7:2:1 was used.

The obtained conductive substrate was subjected to observation of the above-described blackening layer shape, evaluation of visibility, and evaluation of average reflectance and brightness of light having a wavelength of 400 nm or more and 700 nm or less.

Observation of the shape of the blackened layer confirmed that a blackened layer was formed on the upper surface and the side surface of the metal wiring. Other evaluation results are shown in Table 1.

Further, another conductive substrate having the same structure was produced in the same manner, and a laminated conductive substrate was produced in the same manner as in Example 1 using the two conductive substrates.

[Comparative Example 1]

The metal layer forming step to the metal wiring forming step was carried out in the same manner as in the first embodiment. Further, after the metal layer forming step, the blackening layer forming step is performed without performing the patterning step.

In the blackening layer forming step, the upper surface of the metal layer formed in the metal layer forming step of the metal wiring forming step, that is, the entire surface of the surface opposite to the surface of the metal layer opposite to the insulating substrate is employed The dry plating method forms a blackening layer.

In the blackening layer forming step, the denseness as described in Example 1 was used except that a substrate having an adhesion layer and a metal layer formed on one surface of the insulating substrate was used as the substrate. The layer forming step similarly forms a blackening layer.

After the adhesion layer, the metal layer, and the blackening layer are formed on the insulating base material, the adhesion layer, the metal layer, and the blackened layer are patterned in the same pattern. When patterning, first, a mask is formed on the upper surface of the blackened layer, that is, the surface on the opposite side of the surface of the blackened layer facing the metal layer (mask arrangement step).

At this time, an opening similar to the mask formed in the patterning step of the first embodiment was formed on the mask.

Further, the blackening layer, the metal layer, and the adhesion layer are etched by the supply of the etching liquid from the upper surface of the mask (etching step).

Further, the metal wiring formed by etching the metal layer was formed into a plurality of linear patterns, and each of the linear patterns was formed to have a width of 3 μm and a length of 500 mm. Further, the width between the adjacent straight line patterns was 0.2 mm.

The above-described blackened layer shape observation, visibility evaluation, and evaluation of the average reflectance and brightness of light having a wavelength of 400 nm or more and 700 nm or less were performed on the conductive substrate obtained by the above steps.

Observation of the shape of the blackened layer confirmed that a blackened layer was formed only on the upper surface of the metal wiring. Other evaluation results are shown in Table 1.

As is clear from the results shown in Table 1, in the conductive substrate of Comparative Example 1 in which the blackened layer was formed only on the upper surface of the metal wiring, it was confirmed that the visibility was evaluated as ×. On the other hand, in Examples 1 to 5 in which the blackening layer was formed on the upper surface and the side surface of the metal wiring, it was confirmed that the visibility was evaluated as ○.

This may be because the blackening layer is also formed on the side surface of the metal wiring, and light reflection on the side surface of the metal wiring is suppressed.

In addition, in the first to fifth embodiments, the average reflectance of light having a wavelength of 400 nm or more and 700 nm or less was 35% or less, and it was confirmed that the light reflectance on the surface of the metal wiring can be suppressed by the blackened layer.

In particular, in Examples 3 to 5 in which the blackening layer contains nickel and sulfur, the average reflectance of light having a wavelength of 400 nm or more and 700 nm or less was 21.2%, 11.1%, and 18.3%, and it was confirmed that the surface of the metal wiring was particularly suppressed. The effect of light reflection is higher.

Further, in Examples 1 to 5, it was confirmed that the brightness (L*) of the surface of the blackened layer was 65 or less. Therefore, it was confirmed that a blackened layer having an inconspicuous color tone was formed.

1‧‧‧Insulating substrate

2‧‧‧Metal wiring

2a‧‧‧ side section

3, 4‧‧‧ blackening layer

Claims (6)

A conductive substrate comprising: an insulating substrate; a metal wiring disposed on at least one surface of the insulating substrate; and a blackening layer disposed on an upper surface and a side surface of the metal wiring. The conductive substrate of claim 1, wherein the blackening layer contains nickel and sulfur. A method for producing a conductive substrate, comprising the steps of: forming a metal wiring by forming a metal wiring on at least one surface of the insulating substrate; and forming a blackening layer on the upper surface of the metal wiring and A blackening layer is formed on the side. The method for producing a conductive substrate according to the third aspect of the invention, wherein the metal wiring forming step has the step of: forming a metal layer on at least one surface of the insulating substrate; and patterning In the step of forming, the metal layer is patterned to form the metal wiring. The method for producing a conductive substrate according to claim 3, wherein the blackening layer is formed by an electroless plating method in the blackening layer forming step. The method for producing a conductive substrate according to any one of claims 3 to 5, wherein the blackening layer contains nickel and sulfur.