TW201714227A - Processing method of electric packaging structure by discharging bubbles from periphery of adhesive member to greatly enhance reliability and quality of electric packaging structure - Google Patents

Abstract

The present invention provides a processing method of electric packaging structure, which includes the following steps: (a) preparing an electric packaging structure on which at least one adhesive member is disposed for protecting, isolating, or joining with electric components; (b) moving the adhesive member and electric packaging structure into a processing chamber before the at least one adhesive member is cured; (c) raising the temperature inside the processing chamber from room temperature to a predetermined temperature in a temperature raising speed and maintaining the predetermined temperature for a predetermined period, and then reducing from the predetermined temperature to room temperature in a predetermined cooling speed, while the pressure in the processing chamber is subjected to at least once the sequentially alternative changing process between an intermittent pressure rising and an intermittent pressure dropping, so as to discharge the bubbles from the periphery of the adhesive member, and thus greatly enhance the reliability and quality of the electric packaging structure.

Description

Electronic package structure processing method

The invention belongs to the technical field of electronic packaging, in particular to a technical method for providing an electronic packaging structure, which enables the bubbles to have ample time to adjust the spatial position through intermittent pressure changes, which helps to eliminate adhesive parts and electrons. The bubbles at the interface of the package structure and/or the bubbles inside the adhesive member are discharged from the periphery of the adhesive member, which greatly improves the reliability and quality of the electronic package structure.

In the ever-changing generation of technology, high-tech electronic technology has come out one after another, making more humanized and functional electronic products constantly innovating and designing towards light, thin, short and small trends. In order to achieve the above requirements, it is necessary to satisfy various requirements such as high-speed processing, multi-function, integration, small size, light weight, and low cost of electronic components. For this reason, an electronic package structure such as a ball grid array The package structure, Flip Chip package structure, printed circuit board (PCB) package structure, and through-mold via (TMV) package structure have also been developed toward miniaturization and high density.

The conventional ball grid array package structure comprises a wafer and a substrate, and the wafer is attached to the substrate through a die attaching material (DAF) or the like, and is easily applied to the bonded material during the attaching process. Bubbles are generated at the interface of the substrate, which seriously affects the reliability and quality of the product; the flip chip package structure comprises a wafer, a substrate and a plurality of conductive bumps, and the conductive bumps are fixed between the wafer and the substrate, due to conduction The pitch of the bumps is increasingly finer, and the bonding gap between the wafer and the substrate is also increasingly reduced, and bubbles are easily generated at the interface between the primer and the substrate and inside the primer during the edge filling process of the wafer, so that conductivity or thermal conductivity is obtained. Poor, even affecting the service life of the flip chip package structure; the printed circuit board package structure comprises a printed circuit board, the printed circuit board is provided with a plurality of through holes, and each through hole is plated through the inner periphery (Plating through hole, PTH), forming a metal plating layer, each metal plating layer is filled with non-conductive glue, and the difficulty of filling the non-conductive glue is increased due to the increasingly fine diameter of the through hole. Filler during the non-conductive adhesive easily generated at the interface of the metal-plated layer of bubbles, resulting in reliability and Quality PCB package structure; overmolding perforated package comprises a chip, a substrate, a plurality of conductive bumps and a The encapsulant colloid is disposed between the wafer and the substrate, and the encapsulant is disposed on a surface of the substrate, the encapsulant covers the wafer and each of the conductive bumps, and the encapsulant is disposed at intervals a through hole, each of which is filled with the conductive paste. Since the diameter of the through hole is increasingly fine, and the substrate closes one end of the through hole, the difficulty of filling the conductive hole from the other end of the through hole is more difficult. The edge of the other end of the through hole is easy to generate bubbles at the interface between the conductive paste and the through hole, which affects the reliability and quality of the TMV package structure. The formation of the above various types of bubbles is toward the micro package structure such as the ball grid array package structure. The development of high-density and high-density will inevitably cause serious obstacles, and it is necessary to urgently solve them.

Therefore, in view of the problems existing in the above-mentioned conventional electronic package structure, how to develop a bubble elimination method which is more ideal and practical and takes into consideration economic benefits is actually an objective and direction for the relevant industry to actively develop breakthroughs.

In view of this, the inventor has been engaged in the manufacturing development and design experience of related products for many years. After detailed design and careful evaluation, the inventor has finally obtained the practical invention.

Technical problems to be solved: In the process of miniaturization and high density development of electronic package structures such as the conventional ball grid array package structure, the formation of various types of bubbles is seriously affected due to the increasing technical difficulty of filling or viscose. The reliability and quality of the product are necessary to improve.

Technical Solution to Problem: In order to improve the above problems, the present invention provides a method for processing an electronic package structure, the steps of which include: a. preparing an electronic package structure, wherein at least one adhesive component is disposed on the electronic package structure, thereby protecting , isolated or combined with electronic components.

b. moving at least one of the adhesive member and the electronic package structure into a processing chamber before at least one of the adhesive members is uncured.

c. raising the temperature in the processing chamber from an initial temperature to a predetermined temperature at a predetermined heating rate, and maintaining the predetermined temperature for a predetermined time to increase the fluidity of the adhesive member, and then at a predetermined cooling rate The predetermined temperature is lowered to a set temperature, and the pressure in the processing chamber is sequentially subjected to at least one intermittent pressure rise and intermittent pressure drop. The interaction process is reduced to eliminate bubbles at the interface between the adhesive member and the electronic package structure and/or bubbles inside the adhesive member, and the bubbles are discharged from the periphery of the adhesive member.

As described above, the temperature in the processing chamber is set in the range of 20 to 500 degrees Celsius.

As described above, the pressure variation range in the processing chamber is set between 1 atmosphere (atm) and 60 atmospheres (atm).

The invention further provides an adhesive sealing method for an electronic packaging structure, the steps comprising: a. preparing an electronic packaging structure, wherein at least one adhesive component is disposed on the electronic packaging structure, thereby protecting, isolating or combining the electronic components.

b. moving at least one of the adhesive member and the electronic package structure into a processing chamber before at least one of the adhesive members is uncured.

c. raising the temperature in the processing chamber from an initial temperature to a predetermined temperature at a predetermined heating rate, and maintaining the predetermined temperature for a predetermined time to increase the fluidity of the adhesive member while the processing chamber is The pressure sequentially performs at least one intermittent pressure rise and intermittent pressure drop pressure change interaction process to eliminate bubbles at the interface between the adhesive component and the electronic package structure and/or internal bubbles of the adhesive component, and the bubble is adhered by the adhesive The parts are gradually discharged.

d. performing a pressure rise and fall alternating process of intermittent pressure rise and continuous pressure drop in the pressure in the processing chamber, and simultaneously lowering the temperature in the processing chamber from the predetermined temperature to a set temperature by a predetermined temperature drop rate, The residual air bubbles are discharged from the periphery of the adhesive member.

As described above, in step c and step d, the temperature of the processing chamber is set in the range of 20 to 500 degrees Celsius.

In the foregoing, in step c and step d, the pressure variation range in the processing chamber is set between 1 atm and 60 atm.

Compared with the efficacy of the prior art: the processing method of the electronic package structure of the present invention, the pressure in the processing chamber is subjected to a pressure change process of intermittent pressure rise and intermittent pressure drop, and the bubble is more abundant by intermittent pressure change. Time adjustment of the spatial position helps to eliminate air bubbles at the interface between the adhesive component and the electronic package structure and/or internal gas of the adhesive component The bubble is discharged from the periphery of the adhesive member, which greatly improves the reliability and quality of the electronic package structure.

The above-mentioned objects, structures and features of the present invention will be described in detail with reference to the preferred embodiments of the present invention. .

201-203‧‧‧Steps

301-304‧‧‧Steps

10‧‧‧Ball grid array package structure

11‧‧‧ wafer

12‧‧‧Substrate

13‧‧‧Metal wire

14‧‧‧ solder bumps

15‧‧‧ bubbles

20‧‧‧bonded material

30‧‧‧Flip chip package structure

31‧‧‧ wafer

32‧‧‧Substrate

33‧‧‧Electrical bumps

34‧‧‧ bubbles

35‧‧‧ bubbles

40‧‧‧Bottom glue

50‧‧‧PCB package structure

51‧‧‧Printed circuit board

52‧‧‧First conductive layer

53‧‧‧Second conductive layer

54‧‧‧through hole

55‧‧‧metal plating

56‧‧‧First perforation

57‧‧‧Second perforation

58‧‧‧ bubbles

60‧‧‧ Non-conductive adhesive

70‧‧‧TMV package structure

71‧‧‧ wafer

72‧‧‧Substrate

73‧‧‧Electrical bumps

74‧‧‧Package colloid

75‧‧‧through hole

76‧‧‧ solder bumps

77‧‧‧ bubbles

80‧‧‧ conductive adhesive

1 is a flow chart showing a method of processing an electronic package structure according to a first embodiment of the present invention.

Fig. 2 is a graph showing the relationship between temperature, pressure and time of the bubble removing process in the first embodiment of the present invention.

Figure 3 is a flow chart showing the processing method of the electronic package structure of the second embodiment of the present invention.

Fig. 4 is a graph showing the relationship between temperature, pressure and time of the bubble removing process in the second embodiment of the present invention.

Figure 5 is a schematic cross-sectional view showing the sizing of the ball grid array package structure of the present invention.

Figure 6 is a schematic cross-sectional view showing the sizing of the flip chip package structure of the present invention.

Figure 7 is a schematic cross-sectional view showing the sizing of the PCB package structure of the present invention.

Figure 8 is a schematic cross-sectional view showing the sizing of the TMV package structure of the present invention.

Referring to Figures 1 to 2, a first embodiment of the present invention provides a method for processing an electronic package structure, the steps of which include: a. (Step 201) preparing an electronic package structure, at least one of which is disposed on the electronic package structure Adhesive parts are used to protect, insulate or combine electronic components.

b. (Step 202) moving at least one of the adhesive member and the electronic package structure into a processing chamber before at least one of the adhesive members is uncured.

c. (Step 203) increasing the temperature in the processing chamber from an initial temperature to a predetermined temperature at a predetermined heating rate, and maintaining the predetermined temperature for a predetermined time to increase the fluidity of the adhesive member, and then a predetermined cooling rate is decreased from the predetermined temperature to a set temperature Degree, at the same time, the pressure in the processing chamber sequentially performs at least one intermittent pressure rise and intermittent pressure drop pressure change interaction process to eliminate bubbles and/or adhesive parts at the interface between the adhesive component and the electronic package structure. The internal bubble discharges the bubble from the periphery of the adhesive member, wherein the temperature in the processing chamber is set in the range of 20 degrees Celsius to 500 degrees Celsius, and the pressure variation range is set from 1 atmosphere (atm) to 60 atmospheres (atm). between.

Referring to FIG. 2, in the first embodiment of the present invention, the bubble removing process is performed for 80 minutes, and the temperature in the processing chamber is raised from an initial temperature (20 degrees Celsius) to a predetermined temperature over a period of 15 minutes at a predetermined heating rate. (500 degrees Celsius), and maintain a temperature of 500 degrees Celsius for a predetermined time (50 minutes), and then drop to a normal temperature (20 degrees Celsius) from the predetermined temperature (500 degrees Celsius) for 15 minutes at a predetermined cooling rate, and The pressure in the processing chamber is sequentially subjected to four intermittent pressure rises and intermittent pressure drop interactions, wherein the pressure varies from 1 atmosphere (atm) to 60 atmospheres (atm), but the predetermined temperature rise The rate, the predetermined temperature, the predetermined temperature drop rate, the pressure variation range of each intermittent pressure rise and intermittent pressure drop, and the number of pressure rise and fall interaction processes for intermittent pressure rise and intermittent pressure drop are all necessary to process process requirements. Adjustment.

Referring to Figures 3 to 4, a second embodiment of the present invention provides an adhesive sealing method for an electronic package structure, the steps comprising: a. (Step 301) preparing an electronic package structure, wherein the electronic package structure At least one adhesive member is disposed thereon to protect, isolate or bond the electronic components.

b. (Step 302) moving at least one of the adhesive member and the electronic package structure into a processing chamber before at least one of the adhesive members is uncured.

c. (Step 303) raising the temperature in the processing chamber from a normal temperature to a predetermined temperature at a predetermined heating rate, and maintaining the predetermined temperature for a predetermined time to increase the fluidity of the adhesive member while the processing chamber The pressure in the chamber sequentially performs at least one intermittent pressure rise and intermittent pressure drop interaction process to eliminate bubbles at the interface between the adhesive member and the electronic package structure and/or bubbles inside the adhesive member. The bubble is gradually squeezed out from the periphery of the adhesive member, wherein the temperature in the processing chamber is set in the range of 20 degrees Celsius to 500 degrees Celsius, and the pressure variation range is set between 1 atmosphere (atm) and 60 atmospheres (atm). between.

d. (Step 304) Performing an intermittent pressure on the pressure in the processing chamber The pressure rise and fall of the ascending and continuous pressure drop alternately changes, and the temperature in the processing chamber is lowered from the predetermined temperature to a set temperature at a predetermined temperature drop rate, and the residual air bubbles are discharged from the periphery of the adhesive member. The temperature in the processing chamber is set between 20 degrees Celsius and 500 degrees Celsius, and the pressure variation range is set between 1 atmosphere (atm) and 60 atmospheres (atm).

Referring to FIG. 4, in the second embodiment of the present invention, the bubble removing process is performed for 80 minutes, and the temperature in the processing chamber is raised from an initial temperature (20 degrees Celsius) to a predetermined temperature over a period of 15 minutes at a predetermined heating rate. (500 degrees Celsius), and maintain a temperature of 500 degrees Celsius for a predetermined time (50 minutes), and then drop to a set temperature (20 degrees Celsius) from the predetermined temperature (500 degrees Celsius) for 15 minutes at a predetermined cooling rate, while The pressure in the processing chamber sequentially performs three intermittent pressure rises and intermittent pressure drop pressure change interactions, and an intermittent pressure rise and a continuous pressure drop pressure rise and fall interaction process, wherein the pressure variation range is between 1 atmosphere (atm) to 60 atmospheres (atm), but the predetermined temperature increase rate, predetermined temperature, predetermined temperature drop rate, each intermittent pressure rise and intermittent pressure drop pressure variation range and intermittent pressure rise and intermittent The number of pressure rise and fall interactions of the pressure drop is adjusted according to the process requirements.

Referring to FIG. 5, the electronic package structure is a Ball Grid Array package structure 10, and the adhesive component is a die bond member 20, such as a die attachment film (DAF). , screen-on die attach paste, film over wire (FOW) glue and non-conducting paste (NCP), etc., the ball grid array package structure 10 At least one wafer 11 and a substrate 12 are included. The substrate 12 can be a rigid or flexible circuit substrate. The wafer 11 is attached to the substrate 12 through the die member 20, and a metal wire 13 is connected to the solder bump on the wafer 11. 14 and the substrate 12, during the attaching process, bubbles 15 are easily generated at the interface of the bonded material member 20 and the substrate 12, which seriously affects the reliability and quality of the product.

Referring to FIG. 6, the electronic package structure is a Flip-Chip package structure 30, and the adhesive component is an underfill 40, and the composition of the primer 40 is doped with, for example, dioxide. An epoxy resin filled with a filler such as S (S _i O ₂ ) powder, the flip chip package structure 30 includes a wafer 31, a substrate 32 and a plurality of conductive bumps 33, wherein the conductive bumps 33 are formed by general bumps A solder bump made of a bumping process, which is composed of at least one of tin, silver, copper, gold, indium, lead, antimony, zinc, nickel, or other material suitable for soldering, the wafer 31 The conductive bumps 33 are fixed between the substrate 32 and the substrate 32, and the primer 40 is filled in the gap between the wafer 31 and the substrate 32. The primer 40 covers each of the conductive bumps 33 for The function of buffering and protecting the thermal stress and the mechanical stress which may occur between the wafer 31 and the substrate 32 is provided. Since the pitch of the conductive bumps 33 is increasingly fine, the bonding gap between the wafer 31 and the substrate 32 is also increasingly reduced. It is easy to generate bubbles 34 at the interface between the primer 40 and the substrate 32 during the edge filling process. Primer 40 and internal bubbles 35, so that the electrical conductivity or thermal conductivity is poor, even affect the life of the structure 30 of the flip chip package.

Referring to FIG. 7, the electronic package structure is a printed circuit board (PCB) package structure, referred to as a PCB package structure 50, and the adhesive component is a non-conducting paste (NCP). The PCB package structure 50 includes a printed circuit board 51, a first conductive layer 52, and a second conductive layer 53. The printed circuit board 51 is spaced apart from a plurality of through holes 54 each of the through holes 54. Plating through holes (PTH), for example, chemical plating and electroplating, to form a metal plating layer 55, which is disposed on both sides of the printed circuit board 51 The layer 52 and the second conductive layer 53 respectively define a first through hole 56 corresponding to each of the through holes 54. The second conductive layer 53 respectively defines a second through hole corresponding to each of the through holes 54. 57. Each of the metal plating layer 55, the first through hole 56 and the second through hole 57 are filled with the non-conductive adhesive 60, and the first and second conductive layers 52 and 53 are electrically connected through the metal plating layer 55. The through hole 54, the first through hole 56 and the second through hole 57 are increasingly finer in diameter The difficulty of filling the non-conductive adhesive 60 is increased, and bubbles 58 are easily generated at the interface between the non-conductive adhesive 60 and the metal plating layer 55 during the edge filling process of the first through-hole 56, thereby affecting the reliability of the PCB package structure 50. With quality.

As shown in FIG. 8 , the electronic package structure is a through mold via (TMV) package structure, which is referred to as a TMV package structure 70. The adhesive component is a conductive paste (CP) 80. The TMV package structure 70 includes a wafer 71, a substrate 72, a plurality of conductive bumps 73, and an encapsulant 74. The conductive bumps 73 are solder bumps formed by a general bumping process. , its composition is at least one of tin, silver, copper, gold, indium, lead, antimony, zinc, nickel, or other conducive to welding The conductive bumps 73 are disposed between the wafer 71 and the substrate 72. The encapsulant 74 is disposed on a surface of the substrate 72. The encapsulant 74 covers the wafer 71 and each of the conductive bumps. The plurality of through holes 75 are respectively disposed in the through hole 75. Each of the through holes 75 is filled with the conductive paste 80. The other surface of the substrate 72 is fixed with a solder bump 76 corresponding to each of the through holes 75. The conductive paste 80 and the solder bumps 76 are electrically connected to the substrate 72. Since the diameter of the through hole 75 is increasingly fine, and the substrate 72 closes one end of the through hole 75, the conductive paste 80 is filled in by the other end of the through hole 75. The difficulty of the through hole 75 easily generates bubbles 77 at the interface between the conductive paste 80 and the through hole 75 during the edge filling process from the other end of the through hole 75, thereby affecting the reliability and quality of the TMV package structure 70.

In the processing method of the electronic package structure of the present invention, in step 203, the pressure in the processing chamber sequentially performs at least one intermittent pressure rise and intermittent pressure drop in the pressure rise and fall interaction process, and the bubble is intermittently changed by pressure. There is ample time to adjust the spatial position, which helps to eliminate the bubbles at the interface between the adhesive component and the electronic package structure and/or the air bubbles inside the adhesive component, and discharges the bubbles from the periphery of the adhesive component, thereby greatly improving the ball grid array. The reliability and quality of the electronic package structure such as the package structure 10, the flip chip package structure 30, the PCB package structure 50, and the TMV package structure 70.

In the processing method of the electronic package structure of the present invention, in step 303, the pressure in the processing chamber sequentially performs at least one intermittent pressure rise and intermittent pressure drop pressure change interactive change process, in step 304, the processing chamber The pressure undergoes an intermittent pressure rise process, and the intermittent pressure changes cause the bubbles to have ample time to adjust the spatial position, which helps to eliminate bubbles and/or adhesive at the interface between the adhesive component and the electronic package structure. The inner air bubbles are discharged from the periphery of the adhesive member, which greatly improves the reliability and quality of the electronic package structure such as the ball grid array package structure 10, the flip chip package structure 30, the PCB package structure 50 and the TMV package structure 70. .

The present invention has been described with reference to the preferred embodiments of the present invention. However, those skilled in the art can change and modify the present invention without departing from the spirit and scope of the invention. Such changes and modifications shall be covered in the scope defined by the following patent application.

301-304‧‧‧Steps

Claims (10)

The method for processing an electronic package structure includes the steps of: (a) preparing an electronic package structure, disposing at least one adhesive member on the electronic package structure; and (b) moving at least one of the adhesive member and the electronic package structure into the electronic package structure; a processing chamber; (c) increasing the temperature in the processing chamber from an initial temperature to a predetermined temperature, and maintaining the predetermined temperature for a predetermined time, and then descending from the predetermined temperature to a set temperature, and simultaneously processing the chamber The pressure in the chamber sequentially performs at least one intermittent pressure rise and intermittent pressure drop interaction process to eliminate at least one bubble at the interface between the adhesive member and the electronic package structure and/or at least one adhesive member. The internal bubbles are discharged from at least one of the adhesive members. The method of processing an electronic package structure according to claim 1, wherein the processing chamber temperature is set in a range of 20 to 500 degrees Celsius. The method for processing an electronic package structure according to claim 1, wherein the pressure variation range in the processing chamber is set between 1 atm and 60 atm. The method for processing an electronic package structure includes the steps of: (a) preparing an electronic package structure, disposing at least one adhesive member on the electronic package structure; and (b) moving at least one of the adhesive member and the electronic package structure into the electronic package structure; a processing chamber; (c) increasing the temperature in the processing chamber from an initial temperature to a predetermined temperature and maintaining the predetermined temperature for a predetermined period of time while the pressure in the processing chamber sequentially performs at least one intermittent pressure rise and intermittent pressure The descending pressure rises and lowers the alternating change process to eliminate at least one bubble at the interface between the adhesive member and the electronic package structure and/or at least one bubble inside the adhesive member, and gradually discharges the bubble from at least one of the adhesive members (d) performing a pressure rise and fall alternating process of intermittent pressure rise and continuous pressure drop in the pressure in the processing chamber, and simultaneously lowering the temperature in the processing chamber from the predetermined temperature to a set temperature, and remaining bubbles Discharged from at least one of the adhesive members. The method of processing an electronic package structure according to claim 4, wherein in the steps (c) and (d), the temperature in the processing chamber is set in a range of 20 to 500 degrees Celsius. The method for processing an electronic package structure according to claim 4, wherein in the steps (c) and (d), the pressure variation range of the processing chamber is set from 1 atm to 60 atm. )between. The method for processing an electronic package structure according to any one of claims 1 to 6, wherein the electronic package structure is a ball grid array package structure, and the adhesive component is a bonded material member, the ball grid The array package structure includes at least one wafer and a substrate, and at least one of the wafers is attached to the substrate through at least one of the die members. The method for processing an electronic package structure according to any one of claims 1 to 6, wherein the electronic package structure is a flip chip package structure, the adhesive component is a primer, and the flip chip package structure comprises a substrate, a substrate and a plurality of conductive bumps, the conductive bumps are fixed between the wafer and the substrate, and the primer is filled in the gap between the wafer and the substrate by using a glue tool, the primer package Each of the conductive bumps is covered. The method for processing an electronic package structure according to any one of claims 1 to 6, wherein the electronic package structure is a PCB package structure, the adhesive component is a non-conductive glue, and the PCB package structure comprises a a printed circuit board, a first conductive layer and a second conductive layer, wherein the printed circuit board is formed with a plurality of through holes, and each of the through holes is internally plated to form a metal plating layer, and the printed circuit board has two sides respectively Disposing the first conductive layer and the second conductive layer, wherein the first conductive layer respectively has a first through hole corresponding to each of the through holes, and the second conductive layer respectively has a second through hole corresponding to each of the through holes, and each of the second conductive layers respectively The metal plating layer, the first through hole and the second through hole are filled with the non-conductive glue, and the first and second conductive layers are electrically connected through the two ends of the metal plating layer. The method of processing an electronic package structure according to any one of claims 1 to 6, wherein the electronic package structure is a TMV package structure, the adhesive component is a conductive paste, and the TMV package structure comprises a wafer. a substrate, a plurality of conductive bumps, and an encapsulant, the conductive bumps are fixed between the wafer and the substrate, the encapsulant is disposed on a surface of the substrate, the encapsulant encapsulates the wafer and each of the packages a conductive bump, the package colloid is disposed with a plurality of through holes, each of the through holes is filled with the conductive paste, and the other surface of the substrate is fixed with a solder bump corresponding to each of the through holes, and the conductive paste and the conductive paste The solder bumps are electrically connected to the substrate.