TW201710803A - Photosensitive element, laminated body, method for forming resist pattern, and method for producing printed circuit board - Google Patents

Photosensitive element, laminated body, method for forming resist pattern, and method for producing printed circuit board Download PDF

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TW201710803A
TW201710803A TW105121650A TW105121650A TW201710803A TW 201710803 A TW201710803 A TW 201710803A TW 105121650 A TW105121650 A TW 105121650A TW 105121650 A TW105121650 A TW 105121650A TW 201710803 A TW201710803 A TW 201710803A
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intermediate layer
layer
support film
photosensitive
mass
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TW105121650A
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TWI763631B (en
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masakazu Kume
Hiroshi Ono
Ryo Matsumura
Takeshi Ohashi
Kimihiro Yoshizako
Hiroyuki Abe
Satoshi Ootomo
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Hitachi Chemical Co Ltd
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L27/00Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
    • C08L27/02Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L27/04Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing chlorine atoms
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L39/00Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Compositions of derivatives of such polymers
    • C08L39/04Homopolymers or copolymers of monomers containing heterocyclic rings having nitrogen as ring member
    • C08L39/06Homopolymers or copolymers of N-vinyl-pyrrolidones
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L67/00Compositions of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Compositions of derivatives of such polymers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/061Etching masks
    • H05K3/064Photoresists
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Materials For Photolithography (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

The purpose of the invention is to provide a photosensitive element in which a resist pattern having only a small number of micro-defects can be formed. Provided is a photosensitive element provided with a support film, an intermediate layer, and a photosensitive layer in the stated order, wherein the thickness of the support film is 20 [mu]m or greater, and the number of grains in the support film having a diameter of 5 [mu]m or greater is 30 grains/mm2 or less.

Description

感光性元件、積層體、抗蝕劑圖案的形成方法及印刷配線板的製造方法Photosensitive element, laminated body, method of forming resist pattern, and method of manufacturing printed wiring board

本揭示是有關於一種感光性元件、積層體、抗蝕劑圖案的形成方法及印刷配線板的製造方法。The present disclosure relates to a photosensitive element, a laminate, a method of forming a resist pattern, and a method of producing a printed wiring board.

先前,於印刷配線板的製造領域中,作為蝕刻處理或鍍敷處理等中所使用的抗蝕劑材料,廣泛地使用感光性樹脂組成物、及於支撐膜上具備使用感光性樹脂組成物所形成的層(以下,亦稱為「感光層」)的感光性元件。In the field of the production of printed wiring boards, a photosensitive resin composition is widely used as a resist material used in an etching treatment or a plating treatment, and a photosensitive resin composition is used on the support film. A photosensitive element of a formed layer (hereinafter also referred to as "photosensitive layer").

印刷配線板是使用所述感光性元件,並藉由例如以下的程序來製造。即,首先將感光性元件的感光層層壓於覆銅積層板等電路形成用基板上。此時,以感光層的與接觸支撐膜的面為相反側的面密接於電路形成用基板的形成電路的面的方式進行層壓。另外,層壓例如藉由將感光層加熱壓接於電路形成用基板上來進行(常壓層壓法)。The printed wiring board is manufactured using the photosensitive element, for example, by the following procedure. That is, first, the photosensitive layer of the photosensitive element is laminated on a circuit formation substrate such as a copper clad laminate. At this time, lamination is performed so that the surface of the photosensitive layer opposite to the surface contacting the support film is in close contact with the surface of the circuit formation substrate on which the circuit is formed. Further, lamination is performed, for example, by heating and pressing a photosensitive layer on a circuit-forming substrate (atmospheric pressure lamination method).

其次使用遮罩膜等,隔著支撐膜對感光層的所期望的區域進行曝光,藉此產生自由基。所產生的自由基經過幾個反應路徑,而有助於光聚合性化合物的交聯反應(光硬化反應)。繼而,將支撐膜剝離後,利用顯影液將感光層的未硬化部溶解或分散去除,而形成抗蝕劑圖案。繼而,將抗蝕劑圖案作為抗蝕劑,實施蝕刻處理或鍍敷處理而形成導體圖案,最後將感光層的光硬化部(抗蝕劑圖案)剝離(去除)。Next, a mask film or the like is used to expose a desired region of the photosensitive layer via the support film, thereby generating radicals. The generated radicals pass through several reaction paths to contribute to the crosslinking reaction (photohardening reaction) of the photopolymerizable compound. Then, after the support film is peeled off, the uncured portion of the photosensitive layer is dissolved or dispersed by the developer to form a resist pattern. Then, the resist pattern is used as a resist, and an etching process or a plating process is performed to form a conductor pattern, and finally the photocured portion (resist pattern) of the photosensitive layer is peeled off (removed).

但是,於所述隔著支撐膜的曝光方式中,有時於所形成的抗蝕劑圖案中產生微小的脫落。However, in the exposure method in which the support film is interposed, minute peeling may occur in the formed resist pattern.

因此,近年來,正在研究於曝光前將支撐膜剝離後對感光層進行曝光,藉此減少抗蝕劑圖案的微小的脫落的製造方法。但是,當於剝離支撐膜後對感光層進行曝光時,空氣中的氧與所產生的自由基接觸,藉此自由基迅速地穩定化(失活),而光聚合性化合物的光硬化反應難以進行。因此,於該製造方法中,為了減輕將支撐膜剝離後進行曝光時的伴隨氧混入的影響,正在研究使用在支撐膜與感光層之間、具備具有阻氣性的中間層的感光性元件(例如,參照專利文獻1~專利文獻3)。 現有技術文獻 [專利文獻]Therefore, in recent years, a manufacturing method in which the photosensitive layer is exposed after peeling off the support film before exposure, thereby reducing minute peeling of the resist pattern, has been studied. However, when the photosensitive layer is exposed after peeling off the support film, oxygen in the air comes into contact with the generated radicals, whereby the radical is rapidly stabilized (deactivated), and photohardening reaction of the photopolymerizable compound is difficult get on. Therefore, in the production method, in order to reduce the influence of oxygen incorporation during exposure after peeling off the support film, a photosensitive element having an intermediate layer having gas barrier properties between the support film and the photosensitive layer has been studied ( For example, refer to Patent Document 1 to Patent Document 3). Prior art literature [Patent Literature]

專利文獻1:日本專利第5483734號公報 專利文獻2:日本專利特開2013-24913號公報 專利文獻3:日本專利第5551255號公報Patent Document 1: Japanese Patent No. 5,383, 734 Patent Document 2: Japanese Patent Laid-Open No. Hei. No. Hei.

[發明所欲解決之課題] 近年來,伴隨高細線封裝基板的普及,導體圖案的進一步微細化正在發展。對於用於形成此種微細的導體圖案的感光性元件,存在可形成微小的脫落少的抗蝕劑圖案的持續的需求。[Problems to be Solved by the Invention] In recent years, with the spread of high-fine-line package substrates, further miniaturization of conductor patterns is progressing. There is a continuing need for a photosensitive element for forming such a fine conductor pattern that a resist pattern having a small amount of detachment can be formed.

於如所述專利文獻1~專利文獻3中所記載的在支撐膜與感光層之間具備具有阻氣性的中間層的感光性元件中,即便將支撐膜剝離後對感光層進行曝光,亦未必可充分地滿足形成微小的脫落少的抗蝕劑圖案這一要求。尤其,當使用可形成高解析度的抗蝕劑圖案的曝光機(以下,亦稱為「高解析度曝光機」)時,於抗蝕劑圖案中產生的微小的脫落進一步被視為問題。In the photosensitive element including the gas barrier intermediate layer between the support film and the photosensitive layer described in Patent Literatures 1 to 3, even if the support film is peeled off and the photosensitive layer is exposed, It is not always sufficient to satisfy the requirement of forming a resist pattern having a small amount of detachment. In particular, when an exposure machine (hereinafter also referred to as a "high-resolution exposure machine") capable of forming a high-resolution resist pattern is used, minute peeling occurring in the resist pattern is further regarded as a problem.

本揭示是鑒於所述先前技術所具有的課題而成者,其目的在於提供一種可形成微小的脫落少的抗蝕劑圖案的感光性元件、積層體、抗蝕劑圖案的形成方法及印刷配線板的製造方法。 [解決課題之手段]The present invention has been made in view of the problems of the prior art, and an object of the invention is to provide a photosensitive element, a laminated body, a method for forming a resist pattern, and a printed wiring which can form a resist pattern having a small amount of detachment. The manufacturing method of the board. [Means for solving the problem]

為了達成所述目的,本揭示提供一種感光性元件,其依序包括支撐膜、中間層、及感光層,所述支撐膜的厚度為20 μm以上,該支撐膜中所含有的直徑為5 μm以上的粒子的數量為30個/mm2 以下。根據所述感光性元件,可形成微小的脫落少的抗蝕劑圖案。In order to achieve the object, the present disclosure provides a photosensitive element comprising, in order, a support film, an intermediate layer, and a photosensitive layer, the support film having a thickness of 20 μm or more, and the support film having a diameter of 5 μm The number of the above particles is 30/mm 2 or less. According to the photosensitive element, a resist pattern having a small amount of detachment can be formed.

本發明者等人認為作為藉由本揭示的感光性元件,可形成微小的脫落少的優異的抗蝕劑圖案的理由之一,可列舉:源自支撐膜中所含有的潤滑劑等粒子的形狀軌跡難以被轉印至中間層中。即,就其生產性的觀點而言,支撐膜有時包含用以對支撐膜的表面附加滑動性的潤滑劑。該潤滑劑可藉由塗佈或吹附而包含於支撐膜的一面或兩面中,另外,可藉由捏合而包含於支撐膜的一面或兩面(包含內部)中。另外,於支撐膜中,有時亦因支撐膜的製作步驟等而包含潤滑劑以外的粒子。藉由此種潤滑劑等粒子的存在,有時粒子的形狀軌跡被轉印至與粒子接觸的其他層(例如中間層等)中。已知若粒子的形狀軌跡被轉印至中間層中,則即便於將支撐膜剝離後進行曝光的情況下,亦因中間層表面的凹凸(粒子的形狀軌跡),而使曝光光線散射,並導致抗蝕劑圖案中的微小的脫落的產生。尤其,已知當使用高解析度曝光機(例如投影曝光機),於能量低(變成低硬化)的嚴酷的條件下進行曝光時,抗蝕劑圖案中的微小的脫落的產生顯著地出現。The inventors of the present invention consider that one of the reasons for the formation of an excellent resist pattern having a small amount of detachment by the photosensitive element of the present invention is the shape of a particle derived from a lubricant or the like contained in the support film. The track is difficult to transfer to the intermediate layer. That is, from the viewpoint of productivity, the support film sometimes contains a lubricant for attaching slidability to the surface of the support film. The lubricant may be contained on one or both sides of the support film by coating or blowing, and may be contained in one or both sides (including the inside) of the support film by kneading. Further, in the support film, particles other than the lubricant may be contained in the production process of the support film or the like. The presence or absence of particles such as a lubricant may cause the shape trajectory of the particles to be transferred to another layer (for example, an intermediate layer or the like) that is in contact with the particles. It is known that when the shape trajectory of the particles is transferred to the intermediate layer, even when the support film is peeled off and exposed, the exposure light is scattered due to the unevenness (the shape trajectory of the particles) on the surface of the intermediate layer. This causes the occurrence of minute detachment in the resist pattern. In particular, it is known that when exposure is performed under severe conditions of low energy (becoming low-hardening) using a high-resolution exposure machine (for example, a projection exposure machine), generation of minute peeling in the resist pattern remarkably occurs.

已知當於在接觸中間層的面中具備大的粒子的支撐膜上形成中間層時,容易產生該現象(即,潤滑劑等粒子的形狀軌跡朝中間層的轉印)。另外,令人吃驚的是,亦已知:當在支撐膜的與接觸中間層的面為相反側的面中存在大的粒子時,於感光性元件的層壓步驟中,有時亦因輥壓力而將支撐膜的與接觸中間層的面為相反側的面中所存在的大的粒子的形狀軌跡轉印至中間層中。It is known that when an intermediate layer is formed on a support film having large particles in a surface contacting the intermediate layer, this phenomenon is likely to occur (that is, transfer of a shape trajectory of particles such as a lubricant to the intermediate layer). Further, it is also surprisingly known that when large particles are present on the surface of the support film opposite to the surface contacting the intermediate layer, in the laminating step of the photosensitive member, sometimes due to the roll The shape trajectory of the large particles existing in the surface of the support film opposite to the surface contacting the intermediate layer is transferred into the intermediate layer by pressure.

本發明者等人進行努力研究的結果,發現藉由將支撐膜中所含有的潤滑劑等粒子中的直徑為5 μm以上的粒子的數量設為30個/mm2 以下、及將支撐膜的厚度設為20 μm以上,即便經過朝支撐膜上的中間層形成步驟及感光性元件的層壓步驟,亦可抑制源自潤滑劑等粒子的形狀軌跡朝中間層的轉印。因此,根據本揭示的感光性元件,可使抗蝕劑圖案的微小的脫落變得極少。尤其,藉由使用具有特定的厚度的支撐膜,當在支撐膜的與接觸中間層的面為相反側的面中存在大的粒子時,亦可抑制該粒子的影響,而形成微小的脫落少的優異的抗蝕劑圖案。另外,即便於使用高解析度曝光機的情況下,亦可充分地減少抗蝕劑圖案的微小的脫落。As a result of intensive studies, the inventors of the present invention found that the number of particles having a diameter of 5 μm or more in particles such as a lubricant contained in the support film is 30/mm 2 or less, and the support film is used. When the thickness is 20 μm or more, the transfer of the shape trajectory from the particles such as the lubricant to the intermediate layer can be suppressed even after the intermediate layer forming step on the support film and the laminating step of the photosensitive member. Therefore, according to the photosensitive element of the present disclosure, minute detachment of the resist pattern can be made extremely small. In particular, by using a support film having a specific thickness, when large particles are present on the surface of the support film opposite to the surface contacting the intermediate layer, the influence of the particles can be suppressed, and minute peeling is formed. Excellent resist pattern. Further, even when a high-resolution exposure machine is used, minute peeling of the resist pattern can be sufficiently reduced.

另外,於所述感光性元件中,所述支撐膜的接觸中間層的面中的直徑為5 μm以上的粒子的數量可為10個/mm2 以下。根據所述感光性元件,可形成微小的脫落更少的抗蝕劑圖案。Further, in the photosensitive element, the number of particles having a diameter of 5 μm or more in the surface of the support film contacting the intermediate layer may be 10 pieces/mm 2 or less. According to the photosensitive element, a resist pattern having a small amount of detachment can be formed.

另外,於所述感光性元件中,中間層可包含聚乙烯醇。根據所述感光性元件,可進一步抑制藉由曝光中所使用的光化射線所產生的自由基的失活,並可提昇所形成的抗蝕劑圖案的解析性。Further, in the photosensitive element, the intermediate layer may contain polyvinyl alcohol. According to the photosensitive element, deactivation of radicals generated by actinic rays used in exposure can be further suppressed, and the resolution of the formed resist pattern can be improved.

另外,於所述感光性元件中,支撐膜可為聚酯膜。根據所述感光性元件,可提昇支撐膜的機械強度及耐熱性,並且可抑制於支撐膜上形成中間層時所產生的中間層的皺褶等不良,而可提昇作業性。Further, in the photosensitive element, the support film may be a polyester film. According to the photosensitive element, the mechanical strength and heat resistance of the support film can be improved, and defects such as wrinkles of the intermediate layer which are generated when the intermediate layer is formed on the support film can be suppressed, and workability can be improved.

另外,本揭示提供一種抗蝕劑圖案的形成方法,其包括:使用所述本揭示的感光性元件,將所述感光層與所述中間層及所述支撐膜以該順序配置於基板上的步驟;將所述支撐膜去除,利用光化射線隔著所述中間層對所述感光層進行曝光的步驟;以及自所述基板上去除所述感光層的未硬化部及所述中間層的步驟。所述抗蝕劑圖案的形成方法因使用所述本揭示的感光性元件來形成抗蝕劑圖案,故可形成微小的脫落少的抗蝕劑圖案。In addition, the present disclosure provides a method of forming a resist pattern, comprising: disposing the photosensitive layer and the intermediate layer and the support film on the substrate in this order using the photosensitive element of the present disclosure a step of removing the support film, exposing the photosensitive layer through the intermediate layer by actinic rays; and removing the uncured portion of the photosensitive layer and the intermediate layer from the substrate step. In the method of forming the resist pattern, since the resist pattern is formed by using the photosensitive element of the present invention, a resist pattern having little fine peeling can be formed.

另外,所述曝光可使用透鏡的數值孔徑為0.05以上的高解析度曝光機來進行。根據所述抗蝕劑圖案的形成方法,使用所述本揭示的感光性元件來形成抗蝕劑圖案,故能夠以高解析度形成微小的脫落少的抗蝕劑圖案。Further, the exposure can be carried out using a high-resolution exposure machine having a lens having a numerical aperture of 0.05 or more. According to the method for forming a resist pattern, since the resist pattern is formed using the photosensitive element of the present invention, it is possible to form a resist pattern having a small amount of peeling off with high resolution.

另外,本揭示提供一種積層體,其依序包括基板、感光層、及中間層,且在所述中間層的與所述感光層側為相反側的面中,直徑為3 μm以上的凹部的數量為30個/mm2 以下。本發明者等人發現當使用具有包含直徑為5 μm以上的粒子的支撐膜的感光性元件來製造積層體時,源自所述直徑為5 μm以上的粒子的形狀軌跡被轉印至所製造的積層體的中間層中,而形成直徑為3 μm以上的凹部。即,支撐膜中所含有的直徑為5 μm以上的粒子的數量為30個/mm2 以下、與中間層的與感光層側為相反側的面中的直徑為3 μm以上的凹部的數量為30個/mm2 以下具有關連性。而且,根據具備直徑為3 μm以上的凹部的數量為30個/mm2 以下的中間層的積層體,可形成微小的脫落少的抗蝕劑圖案。In addition, the present disclosure provides a laminate including a substrate, a photosensitive layer, and an intermediate layer in this order, and a recess having a diameter of 3 μm or more in a surface of the intermediate layer opposite to the side of the photosensitive layer The number is 30/mm 2 or less. The inventors of the present invention have found that when a laminate is produced using a photosensitive member having a support film containing particles having a diameter of 5 μm or more, a shape trajectory derived from particles having a diameter of 5 μm or more is transferred to the manufactured In the intermediate layer of the laminate, a recess having a diameter of 3 μm or more is formed. In other words, the number of the particles having a diameter of 5 μm or more contained in the support film is 30/mm 2 or less, and the number of the recesses having a diameter of 3 μm or more in the surface opposite to the side of the photosensitive layer on the intermediate layer is 30 / mm 2 or less is related. In addition, a laminate having a small number of recesses having a diameter of 3 μm or more and an intermediate layer of 30 pieces/mm 2 or less can form a resist pattern having a small amount of detachment.

另外,本揭示提供一種抗蝕劑圖案的形成方法,其包括:利用光化射線,隔著所述本揭示的積層體中的所述中間層對所述感光層進行曝光的步驟;以及自所述基板上去除所述感光層的未硬化部及所述中間層的步驟。所述抗蝕劑圖案的形成方法因使用所述本揭示的積層體來形成抗蝕劑圖案,故可形成微小的脫落少的抗蝕劑圖案。In addition, the present disclosure provides a method of forming a resist pattern, comprising: a step of exposing the photosensitive layer through the intermediate layer in the laminate of the present disclosure by using actinic rays; The step of removing the uncured portion of the photosensitive layer and the intermediate layer on the substrate. In the method of forming the resist pattern, since the resist pattern is formed by using the laminated body of the present invention, it is possible to form a resist pattern having a small amount of detachment.

進而,本揭示提供一種印刷配線板的製造方法,其包括:對藉由所述本揭示的抗蝕劑圖案的形成方法而形成有抗蝕劑圖案的基板進行蝕刻處理或鍍敷處理,而形成導體圖案的步驟。所述印刷配線板的製造方法藉由所述本揭示的抗蝕劑圖案的形成方法來形成抗蝕劑圖案,故可形成微小的脫落少的抗蝕劑圖案,可提供適合於印刷配線板的高密度化的印刷配線板的製造方法。 [發明的效果]Further, the present disclosure provides a method of manufacturing a printed wiring board, comprising: performing an etching treatment or a plating treatment on a substrate on which a resist pattern is formed by the method for forming a resist pattern according to the present disclosure; The step of the conductor pattern. In the method for producing a printed wiring board, the resist pattern is formed by the method for forming a resist pattern according to the present invention, so that a resist pattern having a small amount of peeling off can be formed, and a printed wiring board can be provided. A method of manufacturing a printed wiring board having a high density. [Effects of the Invention]

根據本揭示,可提供一種可形成微小的脫落少的抗蝕劑圖案的感光性元件、積層體、抗蝕劑圖案的形成方法及印刷配線板的製造方法。According to the present disclosure, it is possible to provide a photosensitive element, a laminate, a method of forming a resist pattern, and a method of producing a printed wiring board, which are capable of forming a resist pattern having a small amount of detachment.

以下,視需要一面參照圖式,一面對本揭示的適宜的實施形態進行詳細說明。於以下的實施形態中,當然除特別明示的情況、及認為原理上明顯需要的情況等以外,其構成要素(亦包含要素步驟等)未必是必需。數值及其範圍亦同樣如此,應解釋成並非不當地限制本揭示者。Hereinafter, a preferred embodiment of the present disclosure will be described in detail with reference to the drawings as needed. In the following embodiments, of course, the constituent elements (including the element steps and the like) are not necessarily required except for the case where it is specifically indicated and the case where it is considered to be clearly required in principle. The same is true for numerical values and ranges thereof, and should be construed as not unduly limiting the present disclosure.

再者,於本說明書中,所謂(甲基)丙烯酸,是指丙烯酸及與其對應的甲基丙烯酸的至少一者。另外,(甲基)丙烯酸酯等其他類似表達亦同樣如此。In the present specification, the term "(meth)acrylic acid" means at least one of acrylic acid and methacrylic acid corresponding thereto. In addition, other similar expressions such as (meth) acrylate are also the same.

另外,於本說明書中,「步驟」這一用語不僅是指獨立的步驟,即便在無法與其他步驟明確地加以區分的情況下,只要達成該步驟的預期的作用,則亦包含於本用語中。In addition, in the present specification, the term "step" means not only an independent step, but even if it cannot be clearly distinguished from other steps, it is included in the term as long as the intended effect of the step is achieved. .

進而,於本說明書中,使用「~」來表示的數值範圍表示包含「~」的前後所記載的數值分別作為最小值及最大值的範圍。另外,於本說明書中階段性地記載的數值範圍內,某一階段的數值範圍的上限值或下限值可替換成其他階段的數值範圍的上限值或下限值。另外,於本說明書中所記載的數值範圍內,該數值範圍的上限值或下限值可替換成實施例中所示的值。另外,於本說明書中,「層」這一用語於作為平面圖進行觀察時,除整面地形成的形狀結構以外,亦包含部分地形成的形狀結構。Further, in the present specification, the numerical range indicated by "~" indicates a range including the numerical values described before and after "~" as the minimum value and the maximum value, respectively. Further, in the numerical range recited in the specification, the upper limit or the lower limit of the numerical range of one stage may be replaced with the upper limit or the lower limit of the numerical range of the other stage. In addition, within the numerical ranges described in the specification, the upper or lower limit of the numerical range may be replaced with the value shown in the embodiment. In addition, in the present specification, the term "layer" includes a partially formed shape structure in addition to the shape structure formed over the entire surface when viewed as a plan view.

[感光性元件] 如圖1所示,本實施形態的感光性元件1依序具備支撐膜2、中間層3、及感光層4,亦可進而具備保護層5等其他層。以下,對本實施形態的感光性元件中的各層進行詳述。[Photosensitive Element] As shown in FIG. 1, the photosensitive element 1 of the present embodiment includes the support film 2, the intermediate layer 3, and the photosensitive layer 4 in this order, and may further include another layer such as the protective layer 5. Hereinafter, each layer in the photosensitive element of the present embodiment will be described in detail.

<支撐膜> 於本實施形態的感光性元件中,所述支撐膜的厚度為20 μm以上,該支撐膜中所含有的直徑為5 μm以上的粒子的數量為30個/mm2 以下。藉由支撐膜的厚度及支撐膜中所含有的粒子的數量處於所述範圍內,可抑制支撐膜中所存在的潤滑劑等粒子的朝中間層的形狀軌跡轉印,並可抑制曝光中所使用的光化射線的散射(例如漫反射),因此可獲得優異的圖案成形性,並可形成微小的脫落少的抗蝕劑圖案。另一方面,於先前的感光性元件中,即便於以提昇解析性的觀點而在曝光步驟前將支撐膜剝離的情況下,藉由潤滑劑等粒子的形狀軌跡朝中間層中的轉印,而亦於曝光步驟中產生光散射,且於顯影後的抗蝕劑圖案中易產生微小的脫落。另外,當使用高解析度曝光機時,由該光散射所產生的影響進一步變大,於顯影後的抗蝕劑圖案中更容易產生微小的脫落。若將此種感光性元件用於印刷配線板的製造,則成為產生蝕刻時的開路不良及產生鍍敷時的短路不良的一個原因,印刷配線板的製造良率會下降。<Support film> In the photosensitive element of the present embodiment, the thickness of the support film is 20 μm or more, and the number of particles having a diameter of 5 μm or more contained in the support film is 30/mm 2 or less. When the thickness of the support film and the number of particles contained in the support film are within the above range, the transfer of the shape track of the particles such as the lubricant present in the support film toward the intermediate layer can be suppressed, and the exposure can be suppressed. The scattering of actinic rays used (for example, diffuse reflection) allows excellent pattern formability to be obtained, and a resist pattern having little fine peeling can be formed. On the other hand, in the case of the conventional photosensitive element, even when the support film is peeled off before the exposure step from the viewpoint of improving the resolution, the transfer of the shape trajectory of the particles such as a lubricant into the intermediate layer is performed. Light scattering is also generated in the exposure step, and minute peeling is likely to occur in the developed resist pattern. Further, when a high-resolution exposure machine is used, the influence by the light scattering is further increased, and minute peeling is more likely to occur in the resist pattern after development. When such a photosensitive element is used for the production of a printed wiring board, there is a cause of an open failure at the time of etching and a short-circuit defect at the time of plating, and the manufacturing yield of the printed wiring board is lowered.

支撐膜的厚度為20 μm以上,但亦可為25 μm以上、或45 μm以上。藉由將支撐膜的厚度設為20 μm以上,於感光性元件的層壓時可抑制自支撐膜朝中間層的粒子形狀軌跡的轉印,故當隔著中間層對感光層進行曝光時,可抑制曝光光線的散射,並可形成微小的脫落少的抗蝕劑圖案。尤其,於支撐膜的與接觸中間層的面為相反側的面中含有直徑為5 μm以上的粒子的情況下,及當將感光性元件層壓於基板上來製造積層體時,於除支撐膜中所含有的粒子以外,異物因靜電等的影響而附著於支撐膜的與接觸中間層的面為相反側的面上的情況下,藉由將支撐膜的厚度設為20 μm以上,可大幅度地抑制源自該些粒子及因靜電等影響而附著的異物的粒子形狀軌跡被轉印至中間層中,其結果,可顯著地抑制於抗蝕劑圖案中產生微小的脫落。另外,支撐膜的厚度可為200 μm以下、或100 μm以下。藉由將支撐膜的厚度設為200 μm以下,存在容易獲得經濟上的益處的傾向。再者,所謂「支撐膜的厚度」,是指支撐膜的與面方向正交的方向的長度,所謂「粒子形狀軌跡」,是指「源自潤滑劑等粒子的形狀軌跡」。The thickness of the support film is 20 μm or more, but may be 25 μm or more or 45 μm or more. By setting the thickness of the support film to 20 μm or more, the transfer of the particle shape trajectory of the self-supporting film toward the intermediate layer can be suppressed during lamination of the photosensitive element, so that when the photosensitive layer is exposed through the intermediate layer, The scattering of the exposure light can be suppressed, and a resist pattern with little small peeling can be formed. In particular, when the surface of the support film opposite to the surface contacting the intermediate layer contains particles having a diameter of 5 μm or more, and when the photosensitive element is laminated on the substrate to produce a laminate, the support film is removed. In the case where the foreign matter adheres to the surface of the support film opposite to the surface contacting the intermediate layer due to the influence of static electricity or the like, the thickness of the support film can be made larger than 20 μm. The particle shape trajectory from the particles and the foreign matter adhering due to the influence of static electricity or the like is suppressed from being transferred to the intermediate layer, and as a result, minute detachment in the resist pattern can be remarkably suppressed. Further, the thickness of the support film may be 200 μm or less or 100 μm or less. By setting the thickness of the support film to 200 μm or less, there is a tendency that economic benefits are easily obtained. In addition, the "thickness of the support film" means the length of the support film in the direction orthogonal to the surface direction, and the "particle shape trajectory" means "the shape trajectory derived from particles such as a lubricant".

支撐膜中所含有的直徑為5 μm以上的粒子的數量為30個/mm2 以下,但就進一步防止由粒子形狀軌跡的轉印所引起的曝光光線的散射的觀點而言,直徑為5 μm以上的粒子的數量亦可為25個/mm2 以下、20個/mm2 以下、10個/mm2 以下、5個/mm2 以下、或1個/mm2 以下。藉由將直徑為5 μm以上的粒子的數量設為30個/mm2 以下,於使用本實施形態的感光性元件所形成的抗蝕劑圖案中難以產生微小的脫落,而可形成微小的脫落少的抗蝕劑圖案。而且,若將此種感光性元件用於印刷配線板的製造,則可抑制產生蝕刻時的開路不良及產生鍍敷時的短路不良,並可抑制印刷配線板的製造良率下降。再者,支撐膜中所含有的直徑為5 μm以上的粒子的數量的下限值為0個/mm2The number of particles having a diameter of 5 μm or more contained in the support film is 30/mm 2 or less, but the diameter is 5 μm from the viewpoint of further preventing scattering of the exposure light caused by the transfer of the particle shape trajectory. The number of the above particles may be 25 pieces/mm 2 or less, 20 pieces/mm 2 or less, 10 pieces/mm 2 or less, 5 pieces/mm 2 or less, or 1 piece/mm 2 or less. When the number of particles having a diameter of 5 μm or more is 30/mm 2 or less, it is difficult to cause minute peeling in the resist pattern formed by using the photosensitive element of the present embodiment, and minute peeling can be formed. Less resist pattern. In addition, when such a photosensitive element is used for the production of a printed wiring board, it is possible to suppress occurrence of an open failure at the time of etching and a short-circuit defect at the time of plating, and it is possible to suppress a decrease in the manufacturing yield of the printed wiring board. Further, the lower limit of the number of particles having a diameter of 5 μm or more contained in the support film is 0/mm 2 .

此處,所謂支撐膜中所含有的直徑為5 μm以上的粒子,是指於使用偏光顯微鏡進行觀察時,具有5 μm以上的直徑(但是,當所觀察到的粒子的形狀並非圓形時,是指其形狀的外接圓的直徑)的粒子,且是指支撐膜的表面中所存在的粒子。另外,所謂粒子,只要是對與支撐膜接觸的層賦予凹凸者,則並無特別限定,例如包括:為了對支撐膜的表面附加滑動性而含有的潤滑劑、有意圖地朝支撐膜吹附的有機粒子或無機粒子(以下,亦稱為「吹附粒子」)、異物、凝聚物(例如潤滑劑的凝聚物,吹附粒子的凝聚物,或者聚合物的凝膠狀物、作為原料的單體、製造支撐膜時所使用的觸媒、視需要而含有的無機微粒子或有機微粒子於製作膜時凝聚而形成的凝聚物)、將潤滑劑層(包含潤滑劑的層)塗佈於支撐膜上時所產生的由潤滑劑與黏著劑等所引起的鼓起等。粒子的形狀並無特別限定,可為球狀等規則的形狀,亦可為不規則的形狀。另外,粒子的材質並無特別限定,可為有機物,亦可為金屬等無機物。再者,於將直徑為5 μm以上的粒子設為30個/mm2 以下時,只要選擇性地使用該些粒子之中,粒徑小的粒子或分散性優異的粒子即可。Here, the particles having a diameter of 5 μm or more contained in the support film have a diameter of 5 μm or more when observed with a polarizing microscope (however, when the shape of the observed particles is not circular) It refers to particles of the diameter of the circumcircle of its shape, and refers to particles present in the surface of the support film. In addition, the particles are not particularly limited as long as they impart unevenness to the layer in contact with the support film, and include, for example, a lubricant contained in order to impart slidability to the surface of the support film, and intentionally attached to the support film. Organic particles or inorganic particles (hereinafter also referred to as "blowed particles"), foreign matter, aggregates (for example, agglomerates of lubricants, aggregates of blown particles, or gels of polymers, as raw materials) The monomer, the catalyst used in the production of the support film, the inorganic fine particles or organic fine particles contained as needed, and the aggregate formed by the aggregation of the organic fine particles, and the lubricant layer (layer containing the lubricant) are applied to the support. A bulge caused by a lubricant, an adhesive, or the like which is generated on the film. The shape of the particles is not particularly limited, and may be a regular shape such as a spherical shape or an irregular shape. Further, the material of the particles is not particularly limited, and may be an organic substance or an inorganic substance such as a metal. In addition, when the particles having a diameter of 5 μm or more are 30/mm 2 or less, particles having a small particle diameter or particles having excellent dispersibility may be used as the particles.

另外,直徑為5 μm以上的粒子的數量可使用偏光顯微鏡來測定。更具體而言,利用偏光顯微鏡觀察支撐膜的兩面,對存在於支撐膜的兩面中的直徑為5 μm以上的粒子的數量進行累計,並將所獲得的數量設為支撐膜中所含有的直徑為5 μm以上的粒子的數量。再者,當支撐膜為透明(即,霧值為5%以下)時,使焦點對準表面而對支撐膜的一個面與另一個面分別進行觀察,並測定直徑為5 μm以上的粒子的數量。測定區域設為1 mm見方的大小,對至少10個部位進行測定,並將其平均值設為支撐膜中所含有的直徑為5 μm以上的粒子的數量。再者,直徑為5 μm以上的一次粒子與直徑未滿5 μm的一次粒子凝聚而形成的凝聚物可算作1個。另外,於本說明書中,所謂「凝聚」,是指粒子(例如一次粒子)彼此接觸或以1 μm以下接近,形成比各粒子更大的集合體的狀態。Further, the number of particles having a diameter of 5 μm or more can be measured using a polarizing microscope. More specifically, the both sides of the support film are observed by a polarizing microscope, and the number of particles having a diameter of 5 μm or more present on both surfaces of the support film is accumulated, and the obtained amount is set as the diameter contained in the support film. The number of particles of 5 μm or more. Further, when the support film is transparent (that is, the haze value is 5% or less), the focus is aligned on the surface, and one surface and the other surface of the support film are separately observed, and particles having a diameter of 5 μm or more are measured. Quantity. The measurement area was set to a size of 1 mm square, and at least 10 sites were measured, and the average value thereof was defined as the number of particles having a diameter of 5 μm or more contained in the support film. Further, the aggregate formed by the primary particles having a diameter of 5 μm or more and the primary particles having a diameter of less than 5 μm may be counted as one. In the present specification, the term "agglomeration" refers to a state in which particles (for example, primary particles) are in contact with each other or close to 1 μm or less to form an aggregate larger than each particle.

另外,支撐膜中所含有的直徑為2 μm以上、未滿5 μm的粒子的數量可為1000個/mm2 以下、500個/mm2 以下,或10個/mm2 以下。再者,所述粒子的數量的下限值為0個/mm2 。直徑為2 μm以上、未滿5 μm的粒子的數量與直徑為5 μm以上的粒子的數量有關,若直徑為5 μm以上的粒子的數量少,則直徑為2 μm以上、未滿5 μm的粒子的數量亦變少。Further, the number of particles having a diameter of 2 μm or more and less than 5 μm contained in the support film may be 1000 pieces/mm 2 or less, 500 pieces/mm 2 or less, or 10 pieces/mm 2 or less. Further, the lower limit of the number of the particles is 0 / mm 2 . The number of particles having a diameter of 2 μm or more and less than 5 μm is related to the number of particles having a diameter of 5 μm or more. If the number of particles having a diameter of 5 μm or more is small, the diameter is 2 μm or more and less than 5 μm. The number of particles is also reduced.

進而,支撐膜中所含有的直徑未滿2 μm的粒子的數量並無特別限定。即便於支撐膜中含有許多直徑未滿2 μm的粒子,對於光散射的影響亦不大。作為其因素,可列舉:於曝光步驟中,當對感光層照射光時,感光層的光硬化反應不僅於光照射部中進行,亦朝光未直接照射的橫方向(相對於光照射方向為垂直方向)上略微地進行。因此,當粒徑小至未滿2 μm時,即便於光硬化反應在橫方向上進行的情況下,如使得硬化不充分的部分產生的粒子形狀軌跡亦難以被轉印至中間層中,且於所形成的抗蝕劑圖案中難以產生微小的脫落。另一方面,已知當粒徑大至5 μm以上時,於光硬化反應在橫方向上進行的情況下,如使得硬化不充分的部分產生的粒子形狀軌跡容易被轉印至中間層中,而導致所形成的抗蝕劑圖案中的微小的脫落的產生。尤其,已知於如表示透鏡的解析度的數值NA(數值孔徑)為0.05以上的高解析度曝光機,例如使用能量衰減的光化射線的投影曝光機的情況下,於光未直接照射的區域中的光硬化難以進行,因此所形成的抗蝕劑圖案中的微小的脫落更容易產生。Further, the number of particles having a diameter of less than 2 μm contained in the support film is not particularly limited. That is, it is convenient for the support film to contain a plurality of particles having a diameter of less than 2 μm, and the effect on light scattering is not large. As a factor, in the exposure step, when the photosensitive layer is irradiated with light, the photohardening reaction of the photosensitive layer is performed not only in the light irradiation portion but also in the lateral direction in which the light is not directly irradiated (relative to the light irradiation direction). The vertical direction is slightly performed. Therefore, when the particle diameter is as small as less than 2 μm, even in the case where the photohardening reaction is carried out in the lateral direction, it is difficult to transfer the particle shape trajectory generated by the portion where the hardening is insufficient to the intermediate layer, and It is difficult to cause minute peeling in the formed resist pattern. On the other hand, it is known that when the particle diameter is as large as 5 μm or more, in the case where the photohardening reaction is carried out in the lateral direction, the particle shape trajectory generated by the portion where the hardening is insufficient is easily transferred to the intermediate layer, This causes a slight drop in the formed resist pattern. In particular, it is known that a high-resolution exposure machine having a numerical value NA (numerical aperture) of 0.05 or more, for example, a projection exposure machine using an energy-attenuated actinic ray, is not directly irradiated with light. The photohardening in the region is difficult to proceed, so that minute peeling in the formed resist pattern is more likely to occur.

支撐膜可在支撐膜的與接觸中間層的面為相反側的面中具有潤滑劑等粒子,亦可在支撐膜的接觸中間層的面中具有潤滑劑等粒子。再者,就進一步防止由粒子形狀軌跡的轉印所引起的曝光光線的散射的觀點而言,支撐膜的接觸中間層的面中的直徑為5 μm以上的粒子的數量亦可為10個/mm2 以下、5個/mm2 以下、或1個/mm2 以下。再者,所述粒子的數量的下限值為0個/mm2 。藉由設為此種範圍,存在容易形成微小的脫落更少的抗蝕劑圖案的傾向。當對支撐膜附加潤滑劑時,例如可使用輥塗、流塗、噴塗、簾式流塗、浸塗、縫模塗佈等公知的方法於支撐膜上形成潤滑劑層。為了發揮潤滑劑的功能,可於具有潤滑劑或潤滑劑層的支撐膜中含有1000個/mm2 以上的直徑未滿1 μm的潤滑劑。The support film may have particles such as a lubricant on a surface of the support film opposite to the surface contacting the intermediate layer, or may have particles such as a lubricant on the surface of the support film contacting the intermediate layer. Further, from the viewpoint of further preventing scattering of the exposure light caused by the transfer of the particle-shaped trajectory, the number of particles having a diameter of 5 μm or more in the surface of the support film contacting the intermediate layer may be 10 pieces/ Mm 2 or less, 5 pieces/mm 2 or less, or 1 piece/mm 2 or less. Further, the lower limit of the number of the particles is 0 / mm 2 . With such a range, there is a tendency that a small resist pattern having less detachment tends to be formed. When a lubricant is added to the support film, a lubricant layer can be formed on the support film by a known method such as roll coating, flow coating, spray coating, curtain flow coating, dip coating, or slit die coating. In order to exhibit the function of the lubricant, a lubricant having a lubricant or a lubricant layer may contain 1000/mm 2 or more of a lubricant having a diameter of less than 1 μm.

於支撐膜中亦可存在不具有粒子的層(區域)。於支撐膜中,不具有粒子的層的厚度可為17 μm以上、19 μm以上、或21 μm以上。藉由不具有粒子的層的厚度為17 μm以上,而存在可進一步抑制抗蝕劑圖案中所產生的微小的脫落的傾向。尤其,即便於異物因靜電等的影響而附著於支撐膜的與接觸中間層的面為相反側的面上的情況下,亦存在可進一步抑制抗蝕劑圖案中所產生的微小的脫落的傾向。再者,所謂「不具有粒子的層的厚度」,是指支撐膜的與面方向正交的方向(厚度方向)中的不存在粒子的區域的長度,更詳細而言,是指與厚度方向上最靠近的2個粒子彼此相互對向之側相接的垂直於厚度方向的平面(於剖面觀察中為直線)間的距離的最大值。另外,當具有粒子的層僅存在於支撐膜的一側時,「不具有粒子的層的厚度」是指與具有粒子的層所存在之側為相反側的支撐膜表面、與於最靠近該表面的粒子的與該表面對向之側相接的垂直於厚度方向的平面(於剖面觀察中為直線)間的距離。該不具有粒子的層的厚度可藉由利用掃描型電子顯微鏡(SEM)對支撐膜的剖面進行觀察來測定。另外,於利用SEM的觀察時,亦可進行利用聚焦離子束加工觀察裝置(聚焦離子束(Focused Ion Beam,FIB))的加工。另外,支撐膜中所含有的直徑為5 μm以上的粒子的平均表面深度可為2 μm以下、1 μm以下、或0.5 μm以下。此處,所謂直徑為5 μm以上的粒子的平均表面深度,是指於利用掃描型電子顯微鏡對支撐膜的剖面進行觀察時,直徑為5 μm以上的粒子嵌入至支撐膜中的深度的平均值。A layer (region) having no particles may also be present in the support film. In the support film, the thickness of the layer having no particles may be 17 μm or more, 19 μm or more, or 21 μm or more. When the thickness of the layer having no particles is 17 μm or more, there is a tendency that the minute peeling generated in the resist pattern can be further suppressed. In particular, even when foreign matter adheres to the surface of the support film opposite to the surface contacting the intermediate layer due to the influence of static electricity or the like, there is a tendency that the slight drop occurring in the resist pattern can be further suppressed. . In addition, the "thickness of the layer having no particles" means the length of the region where the particles are not present in the direction (thickness direction) orthogonal to the plane direction of the support film, and more specifically, the thickness direction The maximum value of the distance between the planes perpendicular to the thickness direction (straight line in cross section) where the two closest particles are opposite to each other. Further, when the layer having the particles exists only on one side of the support film, the "thickness of the layer having no particles" means the surface of the support film opposite to the side where the layer having the particles exists, and is closest to the layer The distance between the surface of the surface of the particle that is perpendicular to the thickness direction (the straight line in the cross-sectional view) that is in contact with the opposite side of the surface. The thickness of the layer having no particles can be measured by observing the cross section of the support film by a scanning electron microscope (SEM). Further, in the case of observation by SEM, processing by a focused ion beam processing observation apparatus (Focused Ion Beam (FIB)) can also be performed. Further, the average surface depth of the particles having a diameter of 5 μm or more contained in the support film may be 2 μm or less, 1 μm or less, or 0.5 μm or less. Here, the average surface depth of the particles having a diameter of 5 μm or more refers to the average value of the depth at which the particles having a diameter of 5 μm or more are embedded in the support film when the cross section of the support film is observed by a scanning electron microscope. .

於本實施形態的一形態的感光性元件中,支撐膜的厚度可為20 μm以上,且該支撐膜的接觸中間層的面的表面粗糙度Rz可為500 nm以下。藉由支撐膜的厚度及支撐膜的接觸中間層的面的表面粗糙度處於所述範圍內,可獲得優異的圖案成形性,並可形成微小的脫落少的抗蝕劑圖案。另外,就進一步抑制抗蝕劑圖案的微小的脫落的產生的觀點而言,所述表面粗糙度Rz亦可為300 nm以下、100 nm以下、或80 nm以下。就支撐膜與中間層的黏著力的觀點而言,所述表面粗糙度Rz亦可為1 nm以上、5 nm以上、15 nm以上、或25 nm以上。再者,於本說明書中,表面粗糙度Rz是指依據JIS B0601中所規定的方法,使用市售的表面粗糙度形狀測定機所測定的值。例如,可使用漢迪瑟夫(HANDYSURF)E-35A(東京精密股份有限公司製造),於測定寬度為4000 μm、速度為0.6 mm/s這一條件下進行測定。In the photosensitive element of one embodiment of the present embodiment, the thickness of the support film may be 20 μm or more, and the surface roughness Rz of the surface of the support film contacting the intermediate layer may be 500 nm or less. When the thickness of the support film and the surface roughness of the surface of the support film contacting the intermediate layer are within the above range, excellent pattern formability can be obtained, and a resist pattern having little small peeling can be formed. Further, from the viewpoint of further suppressing generation of minute detachment of the resist pattern, the surface roughness Rz may be 300 nm or less, 100 nm or less, or 80 nm or less. The surface roughness Rz may be 1 nm or more, 5 nm or more, 15 nm or more, or 25 nm or more from the viewpoint of the adhesion between the support film and the intermediate layer. In the present specification, the surface roughness Rz refers to a value measured by a commercially available surface roughness shape measuring machine in accordance with the method specified in JIS B0601. For example, it can be measured under the conditions of a measurement width of 4000 μm and a speed of 0.6 mm/s using HANDYSURF E-35A (manufactured by Tokyo Seimitsu Co., Ltd.).

於本實施形態中,因於曝光前去除支撐膜,故亦可不使用透明性高的支撐膜,但支撐膜的霧值可為0.01%~5.0%、0.01%~2.0%、0.01%~1.5%、0.01%~1.0%、或0.01%~0.5%。若該霧值為0.01%以上,則存在容易製造支撐膜本身的傾向,若為5.0%以下,則存在容易獲得的傾向。此處,所謂「霧值」,是指霧度。本揭示中的霧值是指依據JIS K 7105中所規定的方法,使用市售的霧度計(濁度計)所測定的值。霧值例如可利用NDH-5000(日本電色工業股份有限公司製造)等市售的濁度計來測定。In the present embodiment, since the support film is removed before the exposure, the support film having high transparency may not be used, but the haze value of the support film may be 0.01% to 5.0%, 0.01% to 2.0%, or 0.01% to 1.5%. , 0.01% to 1.0%, or 0.01% to 0.5%. When the haze value is 0.01% or more, the support film itself tends to be easily produced, and when it is 5.0% or less, it tends to be easily obtained. Here, the "haze value" means haze. The haze value in the present disclosure means a value measured using a commercially available haze meter (turbidity meter) according to the method specified in JIS K 7105. The haze value can be measured, for example, by a commercially available turbidity meter such as NDH-5000 (manufactured by Nippon Denshoku Industries Co., Ltd.).

支撐膜的材質可無特別限制地使用。例如可列舉:聚對苯二甲酸乙二酯(Polyethylene terephthalate,PET)、聚對苯二甲酸丁二酯(Polybutylene terephthalate,PBT)、聚2,6-萘二甲酸乙二酯(Polyethylene-2,6-Naphthalate,PEN)等聚酯,及聚丙烯、聚乙烯等聚烯烴。藉由使用聚酯膜作為支撐膜,而存在可提昇支撐膜的機械強度及耐熱性的傾向。另外,藉由使用聚酯膜,而存在可抑制於支撐膜上形成中間層時所產生的中間層的皺褶等不良,並可提昇作業性的傾向。再者,支撐膜可為單層,亦可為多層。The material of the support film can be used without particular limitation. For example, polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyethylene-2,6-naphthalate (Polyethylene-2, Polyesters such as 6-Naphthalate, PEN), and polyolefins such as polypropylene and polyethylene. By using a polyester film as a support film, there is a tendency to improve the mechanical strength and heat resistance of the support film. In addition, by using a polyester film, it is possible to suppress defects such as wrinkles of the intermediate layer which are generated when the intermediate layer is formed on the support film, and the workability tends to be improved. Furthermore, the support film may be a single layer or a plurality of layers.

另外,支撐膜可自市售的一般工業用膜中獲得可作為感光性元件的支撐膜使用的支撐膜。具體而言,例如可列舉:作為PET膜的「QS系列」(東麗(Toray)股份有限公司製造)、「A4100」(東洋紡(Toyobo)股份有限公司製造)、「KFX」(帝人杜邦薄膜(Teijin DuPont Films)股份有限公司製造)等。Further, the support film can be obtained from a commercially available general industrial film as a support film which can be used as a support film for a photosensitive element. Specifically, for example, "QS series" (manufactured by Toray Co., Ltd.), "A4100" (manufactured by Toyobo Co., Ltd.), and "KFX" (Dynasty DuPont film) are used as a PET film. Teijin DuPont Films), etc.).

<中間層> 本實施形態的感光性元件在支撐膜與感光層之間具備中間層。藉此,即便將支撐膜剝離後進行曝光,亦可抑制所形成的抗蝕劑圖案的解析性的惡化。另外,就進一步提昇阻氣性的觀點而言,支撐膜與中間層的黏著力可小於中間層與感光層的黏著力。即,可以說當自感光性元件中剝離支撐膜時,中間層與感光層的無意的剝離得到抑制。另外,中間層亦可稱為遮氧層。另外,中間層可具有水溶性,亦可具有對於顯影液的溶解性。中間層是使用後述的中間層形成用樹脂組成物所形成的層。<Intermediate Layer> The photosensitive element of the present embodiment has an intermediate layer between the support film and the photosensitive layer. Thereby, even if the support film is peeled off and exposed, the deterioration of the resolution of the formed resist pattern can be suppressed. Further, from the viewpoint of further improving the gas barrier properties, the adhesion of the support film to the intermediate layer may be smaller than the adhesion of the intermediate layer to the photosensitive layer. That is, it can be said that when the support film is peeled off from the photosensitive element, unintentional peeling of the intermediate layer and the photosensitive layer is suppressed. In addition, the intermediate layer may also be referred to as an oxygen barrier layer. Further, the intermediate layer may have water solubility or may have solubility to a developing solution. The intermediate layer is a layer formed using a resin composition for forming an intermediate layer to be described later.

(中間層形成用樹脂組成物) 作為中間層形成用樹脂組成物中所含有的樹脂,就作業性及遮氧性的觀點而言,透氧係數可為1×10-13 cm3 (STP)cm/(cm2 ・s・Pa)以下、1×10-14 cm3 (STP)cm/(cm2 ・s・Pa)以下、或1×10-15 cm3 (STP)cm/(cm2 ・s・Pa)以下。中間層形成用樹脂組成物可含有水溶性樹脂。藉由含有水溶性樹脂,而存在所形成的中間層的溶解性提昇的傾向。另外,因容易長時間持續保持所形成的中間層與感光層的層分離,故存在穩定性提昇的傾向。作為水溶性樹脂,例如可列舉:聚乙烯醇、聚乙烯吡咯啶酮等。就透氧係數低、可進一步抑制藉由曝光中所使用的光化射線所產生的自由基的失活的觀點而言,中間層形成用樹脂組成物可含有聚乙烯醇。聚乙烯醇例如可對使乙酸乙烯酯進行聚合所獲得的聚乙酸乙烯酯進行皂化而獲得。本實施形態中所使用的聚乙烯醇的皂化度可為50莫耳%以上、70莫耳%以上、或80莫耳%以上。藉由使用皂化度為50莫耳%以上的聚乙烯醇,而存在可進一步提昇中間層的阻氣性,並可進一步提昇所形成的抗蝕劑圖案的解析性的傾向。再者,本說明書中的「皂化度」是指依據日本工業規格中所規定的JIS K 6726(1994)(聚乙烯醇的試驗方法)所測定的值。另外,所述皂化度的上限值可為100莫耳%。(Resin composition for forming an intermediate layer) The resin contained in the resin composition for forming an intermediate layer has an oxygen permeability coefficient of 1 × 10 -13 cm 3 (STP) from the viewpoint of workability and oxygen shielding property. Cm / (cm 2 · s / Pa) or less, 1 × 10 -14 cm 3 (STP) cm / (cm 2 · s / Pa) or less, or 1 × 10 -15 cm 3 (STP) cm / (cm 2・s・Pa) is below. The resin composition for forming an intermediate layer may contain a water-soluble resin. The solubility of the formed intermediate layer tends to increase by the inclusion of the water-soluble resin. Further, since it is easy to maintain the layer separation of the formed intermediate layer and the photosensitive layer for a long time, stability tends to be improved. Examples of the water-soluble resin include polyvinyl alcohol and polyvinylpyrrolidone. The resin composition for forming an intermediate layer may contain polyvinyl alcohol from the viewpoint that the oxygen permeability coefficient is low and the deactivation of radicals generated by actinic rays used in the exposure can be further suppressed. The polyvinyl alcohol can be obtained, for example, by saponifying a polyvinyl acetate obtained by polymerizing vinyl acetate. The degree of saponification of the polyvinyl alcohol used in the present embodiment may be 50 mol% or more, 70 mol% or more, or 80 mol% or more. By using polyvinyl alcohol having a degree of saponification of 50 mol% or more, the gas barrier properties of the intermediate layer can be further improved, and the resolution of the formed resist pattern tends to be further improved. In addition, the "saponification degree" in this specification is a value measured by JIS K 6726 (1994) (test method of polyvinyl alcohol) prescribed by the Japanese Industrial Standard. Further, the upper limit of the degree of saponification may be 100 mol%.

聚乙烯醇的平均聚合度可為300~3500、300~2500、或300~1000。另外,聚乙烯吡咯啶酮的平均聚合度可為10000~100000、或10000~50000。所述聚乙烯醇可併用皂化度、黏度、聚合度、改性種等不同的兩種以上的聚乙烯醇。The average degree of polymerization of the polyvinyl alcohol may be 300 to 3,500, 300 to 2,500, or 300 to 1,000. Further, the polyvinylpyrrolidone may have an average degree of polymerization of 10,000 to 100,000 or 10,000 to 50,000. The polyvinyl alcohol may be used in combination of two or more kinds of polyvinyl alcohols having different degrees of saponification, viscosity, degree of polymerization, and modified species.

另外,中間層形成用樹脂組成物可含有具有對於顯影液的溶解性的樹脂。作為具有對於顯影液的溶解性的樹脂,例如可包含後述的感光性樹脂組成物中所使用的(A)成分,亦可包含(B)成分。藉由含有具有對於顯影液的溶解性的樹脂,而存在所形成的中間層與感光層的密接性提昇的傾向,另外,存在容易於所形成的中間層上形成感光層的傾向。Further, the resin composition for forming an intermediate layer may contain a resin having solubility in a developing solution. The resin having solubility in the developer may, for example, contain the component (A) used in the photosensitive resin composition described later, and may contain the component (B). By containing a resin having solubility in a developing solution, the adhesion between the formed intermediate layer and the photosensitive layer tends to be improved, and there is a tendency that the photosensitive layer is easily formed on the formed intermediate layer.

為了提昇樹脂組成物的處理性、或調節黏度及保存穩定性,中間層形成用樹脂組成物視需要可含有至少一種溶劑。作為溶劑,例如可列舉:水、有機溶劑等。作為有機溶劑,例如可列舉:甲醇、丙酮、甲苯或該些的混合溶劑等。就提昇形成中間層時的乾燥的效率的觀點而言,可含有甲醇。另外,當中間層形成用樹脂組成物含有水溶性樹脂、水及甲醇時,就對於水溶性樹脂的溶解性的觀點而言,相對於水100質量份,甲醇的含量可為1質量份~100質量份、10質量份~80質量份、或20質量份~60質量份。相對於水100質量份,水溶性樹脂的含量可為1質量份~50質量份、或10質量份~30質量份。In order to improve the handleability of the resin composition or to adjust the viscosity and storage stability, the resin composition for forming an intermediate layer may contain at least one solvent as needed. Examples of the solvent include water, an organic solvent, and the like. Examples of the organic solvent include methanol, acetone, toluene, and a mixed solvent thereof. From the viewpoint of improving the efficiency of drying when forming the intermediate layer, methanol may be contained. In addition, when the resin composition for forming an intermediate layer contains a water-soluble resin, water, and methanol, the content of methanol may be 1 part by mass to 100 parts by mass based on 100 parts by mass of water. Parts by mass, 10 parts by mass to 80 parts by mass, or 20 parts by mass to 60 parts by mass. The content of the water-soluble resin may be from 1 part by mass to 50 parts by mass, or from 10 parts by mass to 30 parts by mass, per 100 parts by mass of the water.

另外,中間層形成用樹脂組成物亦可調配界面活性劑、塑化劑、調平劑等公知的添加劑。作為調平劑,例如可列舉矽酮系調平劑等,作為矽酮系調平劑的市售品,例如可列舉:珀利弗洛(Polyflow)KL-401(共榮社化學股份有限公司製造)等。當含有調平劑時,就中間層的形成容易性的觀點而言,相對於中間層形成用樹脂組成物100質量份,調平劑的含量可為0.01質量份~2.0質量份或0.05質量份~1.0質量份。Further, a well-known additive such as a surfactant, a plasticizer, or a leveling agent may be blended in the resin composition for forming an intermediate layer. Examples of the leveling agent include an anthrone-based leveling agent. Examples of the commercially available product of the anthrone-based leveling agent include Polyflow KL-401 (Kyoeisha Chemical Co., Ltd.). Manufacturing) and so on. When the leveling agent is contained, the content of the leveling agent may be 0.01 parts by mass to 2.0 parts by mass or 0.05 parts by mass based on 100 parts by mass of the resin composition for forming an intermediate layer, from the viewpoint of easiness of formation of the intermediate layer. ~1.0 parts by mass.

作為界面活性劑,就提昇與支撐膜的剝離性的觀點而言,可包含矽酮系界面活性劑或氟系界面活性劑。該些界面活性劑可單獨使用一種、或將兩種以上組合使用。當含有界面活性劑時,就中間層的形成容易性的觀點而言,相對於中間層形成用樹脂組成物100質量份,界面活性劑的含量可為0.01質量份~1.0質量份、0.05質量份~0.5質量份、或0.1質量份~0.3質量份。The surfactant may include an anthrone-based surfactant or a fluorine-based surfactant from the viewpoint of improving the peeling property of the support film. These surfactants may be used alone or in combination of two or more. When the surfactant is contained, the content of the surfactant may be 0.01 parts by mass to 1.0 part by mass, or 0.05 part by mass, based on 100 parts by mass of the resin composition for forming an intermediate layer, from the viewpoint of easiness of formation of the intermediate layer. ~0.5 parts by mass, or 0.1 parts by mass to 0.3 parts by mass.

作為塑化劑,例如就提昇中間層的形成容易性的觀點而言,可包含多元醇化合物。例如可列舉:甘油、二甘油、三甘油等甘油類,乙二醇、二乙二醇、三乙二醇、四乙二醇、聚乙二醇、丙二醇、二丙二醇、聚丙二醇等(聚)伸烷基二醇類,三羥甲基丙烷等。該些塑化劑可單獨使用一種、或將兩種以上組合使用。As the plasticizer, for example, a polyol compound may be contained from the viewpoint of improving the ease of formation of the intermediate layer. Examples thereof include glycerol such as glycerin, diglycerin, and triglycerin, ethylene glycol, diethylene glycol, triethylene glycol, tetraethylene glycol, polyethylene glycol, propylene glycol, dipropylene glycol, and polypropylene glycol (poly). Alkyl glycols, trimethylolpropane, etc. These plasticizers may be used alone or in combination of two or more.

中間層的厚度並無特別限定,但就顯影性的觀點而言,可為12 μm以下、10 μm以下、或8 μm以下。另外,就中間層的形成容易性及解析性的觀點而言,中間層的厚度可為1.0 μm以上、1.5 μm以上、或2 μm以上。The thickness of the intermediate layer is not particularly limited, but may be 12 μm or less, 10 μm or less, or 8 μm or less from the viewpoint of developability. Further, the thickness of the intermediate layer may be 1.0 μm or more, 1.5 μm or more, or 2 μm or more from the viewpoint of easiness of formation and resolution of the intermediate layer.

再者,本實施形態中的中間層可具有感光性,但其感光性比感光層的感光性低。另外,中間層亦可不具有感光性。當中間層不具有感光性時,存在感光層的光感度穩定性進一步提昇的傾向。再者,所謂「感光性」,是指例如於對感光層進行曝光,視需要進行曝光後的加熱處理,繼而使用用以去除感光層的未硬化部的顯影液對感光層進行顯影的情況下,可形成抗蝕劑圖案。Further, the intermediate layer in the present embodiment may have photosensitivity, but its photosensitivity is lower than that of the photosensitive layer. In addition, the intermediate layer may not have photosensitivity. When the intermediate layer does not have photosensitivity, there is a tendency that the photosensitivity stability of the photosensitive layer is further improved. In addition, the term "photosensitivity" refers to, for example, a case where the photosensitive layer is exposed, and if necessary, a heat treatment after exposure, and then a developing solution for removing an uncured portion of the photosensitive layer is used to develop the photosensitive layer. A resist pattern can be formed.

<感光層> 本實施形態的感光層是使用後述的感光性樹脂組成物所形成的層。感光性樹脂組成物只要是性質因光照射而變化(例如進行光硬化)的樹脂組成物,則可結合所期望的目的來使用,可為負型,亦可為正型。感光性樹脂組成物可含有(A)黏合劑聚合物、(B)光聚合性化合物及(C)光聚合起始劑。另外,視需要亦可含有(D)光增感劑、(E)聚合抑制劑或其他成分。以下,對本實施形態的感光性樹脂組成物中所使用的各成分進行更詳細的說明。<Photosensitive layer> The photosensitive layer of the present embodiment is a layer formed using a photosensitive resin composition to be described later. The photosensitive resin composition can be used in combination with a desired purpose as long as it is a resin composition whose properties are changed by light irradiation (for example, photocuring), and may be either negative or positive. The photosensitive resin composition may contain (A) a binder polymer, (B) a photopolymerizable compound, and (C) a photopolymerization initiator. Further, (D) a photosensitizer, (E) a polymerization inhibitor or other components may be contained as needed. Hereinafter, each component used in the photosensitive resin composition of the present embodiment will be described in more detail.

((A)黏合劑聚合物) (A)黏合劑聚合物(以下,亦稱為「(A)成分」)例如可藉由使聚合性單量體進行自由基聚合來製造。作為所述聚合性單量體,例如可列舉:苯乙烯、乙烯基甲苯及α-甲基苯乙烯等在α-位或芳香族環中經取代的可進行聚合的苯乙烯衍生物,二丙酮丙烯醯胺等丙烯醯胺,丙烯腈、乙烯基-正丁基醚等乙烯基醇的醚類,(甲基)丙烯酸烷基酯,甲基丙烯酸苄酯等(甲基)丙烯酸苄酯,(甲基)丙烯酸四氫糠酯,(甲基)丙烯酸二甲基胺基乙酯,(甲基)丙烯酸二乙基胺基乙酯,(甲基)丙烯酸縮水甘油酯,(甲基)丙烯酸2,2,2-三氟乙酯,(甲基)丙烯酸2,2,3,3-四氟丙酯,(甲基)丙烯酸,α-溴丙烯酸,α-氯丙烯酸,β-呋喃基(甲基)丙烯酸,β-苯乙烯基(甲基)丙烯酸,順丁烯二酸,順丁烯二酸酐,順丁烯二酸單甲酯、順丁烯二酸單乙酯、順丁烯二酸單異丙酯等順丁烯二酸單酯,反丁烯二酸,桂皮酸,α-氰基桂皮酸,衣康酸,巴豆酸及丙炔酸。該些可單獨使用一種、或將兩種以上組合使用。(A) Adhesive Polymer (A) The binder polymer (hereinafter also referred to as "(A) component)" can be produced, for example, by radical polymerization of a polymerizable monomer. Examples of the polymerizable unitary substance include a polymerizable styrene derivative substituted with an α-position or an aromatic ring such as styrene, vinyl toluene or α-methylstyrene, and diacetone. An acrylamide such as acrylamide, an ether of a vinyl alcohol such as acrylonitrile or vinyl-n-butyl ether, an alkyl (meth)acrylate or a benzyl (meth)acrylate such as benzyl methacrylate, Tetrahydrofurfuryl methacrylate, dimethylaminoethyl (meth) acrylate, diethylaminoethyl (meth) acrylate, glycidyl (meth) acrylate, (meth) acrylate 2 , 2,2-trifluoroethyl ester, 2,2,3,3-tetrafluoropropyl (meth)acrylate, (meth)acrylic acid, α-bromoacrylic acid, α-chloroacrylic acid, β-furanyl (A Acrylic acid, β-styryl (meth)acrylic acid, maleic acid, maleic anhydride, maleic acid monomethyl ester, maleic acid monoethyl ester, maleic acid Maleic acid monoester such as monoisopropyl ester, fumaric acid, cinnamic acid, α-cyano cinnamic acid, itaconic acid, crotonic acid and propiolic acid. These may be used alone or in combination of two or more.

該些之中,就可塑性提昇的觀點而言,可含有(甲基)丙烯酸烷基酯。作為(甲基)丙烯酸烷基酯,例如可列舉:由下述通式(II)所表示的化合物,及該些化合物的烷基經羥基、環氧基、鹵基等取代而成的化合物。   H2 C=C(R6 )-COOR7 (II)Among these, an alkyl (meth)acrylate may be contained from the viewpoint of plasticity improvement. The (meth)acrylic acid alkyl ester may, for example, be a compound represented by the following formula (II), and a compound in which an alkyl group of these compounds is substituted with a hydroxyl group, an epoxy group, a halogen group or the like. H 2 C=C(R 6 )-COOR 7 (II)

通式(II)中,R6 表示氫原子或甲基,R7 表示碳數1~12的烷基。作為由R7 所表示的碳數1~12的烷基,例如可列舉:甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十一基、十二基及該些基的結構異構體。In the formula (II), R 6 represents a hydrogen atom or a methyl group, and R 7 represents an alkyl group having 1 to 12 carbon atoms. Examples of the alkyl group having 1 to 12 carbon atoms represented by R 7 include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a decyl group, a decyl group, and a decyl group. A base, a dodecyl group, and structural isomers of such groups.

作為由所述通式(II)所表示的(甲基)丙烯酸烷基酯,例如可列舉:(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸十一酯、(甲基)丙烯酸十二酯等。該些可單獨使用一種、或將兩種以上組合使用。Examples of the (meth)acrylic acid alkyl ester represented by the above formula (II) include methyl (meth)acrylate, ethyl (meth)acrylate, and propyl (meth)acrylate. Methyl)butyl acrylate, amyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, octyl (meth)acrylate, 2-ethylhexyl (meth)acrylate And (meth) methacrylate, decyl (meth) acrylate, eleven (meth) acrylate, dodecyl (meth) acrylate, and the like. These may be used alone or in combination of two or more.

另外,就鹼顯影性的觀點而言,(A)成分可含有羧基。含有羧基的(A)成分例如可藉由使具有羧基的聚合性單量體與其他聚合性單量體進行自由基聚合來製造。作為所述具有羧基的聚合性單量體,可為(甲基)丙烯酸,亦可為甲基丙烯酸。另外,含有羧基的(A)成分的酸值可為50 mgKOH/g~250 mgKOH/g。Further, the component (A) may contain a carboxyl group from the viewpoint of alkali developability. The component (A) having a carboxyl group can be produced, for example, by radically polymerizing a polymerizable monomer having a carboxyl group with another polymerizable monomer. The polymerizable monomer having a carboxyl group may be (meth)acrylic acid or methacrylic acid. Further, the acid group (A) having a carboxyl group may have an acid value of from 50 mgKOH/g to 250 mgKOH/g.

就平衡性良好地提昇鹼顯影性與耐鹼性的觀點而言,(A)成分的羧基含量(相對於用於黏合劑聚合物的聚合性單量體總量的具有羧基的聚合性單量體的調配率)可為12質量%~50質量%、12質量%~40質量%、15質量%~35質量%、或15質量%~30質量%。若該羧基含量為12質量%以上,則存在鹼顯影性提昇的傾向,若為50質量%以下,則存在耐鹼性優異的傾向。The carboxyl group content of the component (A) (the polymerizable monomer having a carboxyl group relative to the total amount of the polymerizable monomer for the binder polymer) from the viewpoint of improving the alkali developability and alkali resistance in a well-balanced manner The mixing ratio of the body may be 12% by mass to 50% by mass, 12% by mass to 40% by mass, 15% by mass to 35% by mass, or 15% by mass to 30% by mass. When the carboxyl group content is 12% by mass or more, the alkali developability tends to be improved, and when it is 50% by mass or less, the alkali resistance tends to be excellent.

另外,就密接性及耐化學品性的觀點而言,(A)成分可將苯乙烯或苯乙烯衍生物用作聚合性單量體。當將所述苯乙烯或苯乙烯衍生物作為聚合性單量體時,就使密接性及耐化學品性變得更良好的觀點而言,其含量(相對於用於(A)成分的聚合性單量體總量的苯乙烯或苯乙烯衍生物的調配率)可為10質量%~60質量%、或15質量%~50質量%。若該含量為10質量%以上,則存在密接性提昇的傾向,若為60質量%以下,則存在於顯影時可抑制剝離片變大,並可抑制剝離所需的時間的長時間化的傾向。Further, from the viewpoint of adhesion and chemical resistance, the component (A) can be used as a polymerizable unitary amount of styrene or a styrene derivative. When the styrene or styrene derivative is used as a polymerizable unitary substance, the content (relative to the polymerization for the component (A)) is obtained from the viewpoint of improving adhesion and chemical resistance. The blending ratio of the styrene or the styrene derivative in the total amount of the monomeric body may be 10% by mass to 60% by mass, or 15% by mass to 50% by mass. When the content is 10% by mass or more, the adhesion tends to be improved. When the content is 60% by mass or less, the release sheet can be prevented from becoming large during development, and the time required for peeling can be suppressed from becoming prolonged. .

另外,就解析度及縱橫比的觀點而言,(A)成分亦可將(甲基)丙烯酸苄酯用作聚合性單量體。就進一步提昇解析度及縱橫比的觀點而言,(A)成分中的源自(甲基)丙烯酸苄酯的結構單元的含量可為15質量%~50質量%。Further, from the viewpoint of the resolution and the aspect ratio, the (A) component may also use benzyl (meth)acrylate as a polymerizable unitary body. From the viewpoint of further improving the resolution and the aspect ratio, the content of the structural unit derived from benzyl (meth)acrylate in the component (A) may be 15% by mass to 50% by mass.

該些黏合劑聚合物可單獨使用一種、或將兩種以上組合使用。作為將兩種以上組合使用時的(A)成分,例如可列舉:包含不同的聚合性單量體的兩種以上的黏合劑聚合物、重量平均分子量不同的兩種以上的黏合劑聚合物、及分散度不同的兩種以上的黏合劑聚合物。These binder polymers may be used alone or in combination of two or more. When the component (A) used in combination of two or more types is used, for example, two or more kinds of binder polymers containing different polymerizable single-components, and two or more kinds of binder polymers having different weight average molecular weights, And two or more kinds of binder polymers with different degrees of dispersion.

(A)成分可藉由通常的方法來製造。具體而言,例如可藉由使(甲基)丙烯酸烷基酯與(甲基)丙烯酸、及苯乙烯等進行自由基聚合來製造。The component (A) can be produced by a usual method. Specifically, it can be produced, for example, by radical polymerization of alkyl (meth)acrylate, (meth)acrylic acid, and styrene.

就平衡性良好地提昇機械強度與鹼顯影性的觀點而言,(A)成分的重量平均分子量可為20,000~300,000、40,000~150,000、40,000~120,000、或50,000~80,000。若(A)成分的重量平均分子量為20,000以上,則存在耐顯影液性優異的傾向,若為300,000以下,則存在可抑制顯影時間變長的傾向。再者,本說明書中的重量平均分子量是利用凝膠滲透層析法(Gel Permeation Chromatography,GPC)進行測定,並藉由使用標準聚苯乙烯所製作的校準曲線進行換算所得的值。The weight average molecular weight of the component (A) may be 20,000 to 300,000, 40,000 to 150,000, 40,000 to 120,000, or 50,000 to 80,000 from the viewpoint of improving the mechanical strength and alkali developability in a well-balanced manner. When the weight average molecular weight of the component (A) is 20,000 or more, the development liquid resistance tends to be excellent, and when it is 300,000 or less, the development time tends to be suppressed. Incidentally, the weight average molecular weight in the present specification is a value obtained by conversion using a gel permeation chromatography (GPC) and converted by a calibration curve prepared using standard polystyrene.

相對於(A)成分及後述的(B)成分的固體成分總量100質量份,所述(A)成分的含量可為30質量份~80質量份、40質量份~75質量份、或50質量份~70質量份。若(A)成分的含量為該範圍內,則感光性樹脂組成物的塗膜性及光硬化部的強度變得更良好。The content of the component (A) may be 30 parts by mass to 80 parts by mass, 40 parts by mass to 75 parts by mass, or 50% based on 100 parts by mass of the total solid content of the component (A) and the component (B) to be described later. Parts by mass to 70 parts by mass. When the content of the component (A) is within this range, the coating property of the photosensitive resin composition and the strength of the photocured portion are further improved.

((B)光聚合性化合物) 本實施形態的感光性樹脂組成物可含有(B)光聚合性化合物(以下,亦稱為「(B)成分」)。(B)成分只要是可進行光聚合的化合物、可進行光交聯的化合物,則可無特別限制地使用,例如可使用分子內具有至少1個乙烯性不飽和鍵的化合物。(B) Photopolymerizable Compound The photosensitive resin composition of the present embodiment may contain (B) a photopolymerizable compound (hereinafter also referred to as "(B) component"). The component (B) is not particularly limited as long as it is a photopolymerizable compound and a photocrosslinkable compound. For example, a compound having at least one ethylenically unsaturated bond in the molecule can be used.

作為(B)成分,例如可列舉:國際公開第2015/177947號中所記載的具有乙烯性不飽和鍵的光聚合性化合物。該些可單獨使用一種、或將兩種以上組合使用。The (B) component is, for example, a photopolymerizable compound having an ethylenically unsaturated bond described in International Publication No. 2015/177947. These may be used alone or in combination of two or more.

就平衡性良好地提昇解析性、密接性及抗蝕劑端部產生的抑制性的觀點而言,(B)成分可含有雙酚型(甲基)丙烯酸酯化合物。作為所述雙酚型(甲基)丙烯酸酯化合物,可為由下述通式(III)所表示的化合物。 [化1] The component (B) may contain a bisphenol type (meth) acrylate compound from the viewpoint of improving the analytical property, the adhesion, and the inhibition of the end portion of the resist in a well-balanced manner. The bisphenol type (meth) acrylate compound may be a compound represented by the following formula (III). [Chemical 1]

通式(III)中,R1 、R2 、R3 及R4 分別獨立地表示氫原子或甲基。X及Y分別獨立地表示伸乙基或伸丙基,XO及YO分別獨立地表示氧基伸乙基(以下,有時稱為「EO基」)或氧基伸丙基(以下,有時稱為「PO基」)。p1 、p2 、q1 及q2 分別獨立地表示0~40的數值。其中,p1 +q1 及p2 +q2 均為1以上。當X為伸乙基,Y為伸丙基時,p1 +p2 為1~40,q1 +q2 為0~20。當X為伸丙基,Y為伸乙基時,p1 +p2 為0~20,q1 +q2 為1~40。p1 、p2 、q1 及q2 表示EO基或PO基的結構單元的數量,因此於單一的分子中表示整數值,於多種的分子的集合體中表示作為平均值的有理數。再者,EO基及PO基分別可連續地以嵌段方式存在,亦可無規地存在。In the formula (III), R 1 , R 2 , R 3 and R 4 each independently represent a hydrogen atom or a methyl group. X and Y each independently represent an ethylidene group or a propyl group, and XO and YO each independently represent an oxyethyl group (hereinafter, sometimes referred to as "EO group") or an oxypropyl group (hereinafter, sometimes referred to as "PO base"). p 1 , p 2 , q 1 and q 2 each independently represent a numerical value of 0 to 40. However, both p 1 + q 1 and p 2 + q 2 are 1 or more. When X is an ethyl group and Y is a propyl group, p 1 + p 2 is from 1 to 40, and q 1 + q 2 is from 0 to 20. When X is a propyl group and Y is an ethyl group, p 1 + p 2 is 0 to 20, and q 1 + q 2 is 1 to 40. Since p 1 , p 2 , q 1 and q 2 represent the number of structural units of the EO group or the PO group, an integer value is represented in a single molecule, and a rational number as an average value is represented in an aggregate of a plurality of molecules. Further, the EO group and the PO group may be continuously present in a block form, or may be randomly present.

當使用雙酚型(甲基)丙烯酸酯化合物作為(B)成分時,就耐化學品性進一步提昇的觀點而言,相對於(A)成分及(B)成分的固體成分總量,所述化合物的含量可為1質量%~50質量%、或3質量%~40質量%。When a bisphenol type (meth) acrylate compound is used as the component (B), the total amount of solid components of the component (A) and the component (B) is the same as the total chemical resistance of the component (A) and the component (B). The content of the compound may be from 1% by mass to 50% by mass, or from 3% by mass to 40% by mass.

另外,就耐化學品性進一步提昇的觀點而言,相對於(B)成分的固體成分總量,雙酚型(甲基)丙烯酸酯化合物的含量可為30質量%~99質量%,50質量%~97質量%、或60質量%~95質量%。In addition, from the viewpoint of further improvement in chemical resistance, the content of the bisphenol type (meth) acrylate compound may be 30% by mass to 99% by mass, based on the total amount of the solid content of the component (B). % to 97% by mass, or 60% by mass to 95% by mass.

另外,就使解析度變得更良好的觀點而言,相對於(A)成分及(B)成分的固體成分總量,EO基及PO基的總數為1~7的由通式(III)所表示的化合物的含量可為1質量%~40質量%,2質量%~38質量%、或3質量%~28質量%。Further, from the viewpoint of improving the resolution, the total amount of the solid components of the component (A) and the component (B) is such that the total number of the EO group and the PO group is from 1 to 7 is represented by the formula (III). The content of the compound represented may be 1% by mass to 40% by mass, 2% by mass to 38% by mass, or 3% by mass to 28% by mass.

另外,就進一步提昇對於基板的凹凸的追隨性的觀點而言,亦可含有使多元醇與α,β-不飽和羧酸進行反應所獲得的化合物。作為此種化合物,可使用分子內具有EO基及PO基兩者的聚伸烷基二醇二(甲基)丙烯酸酯、具有EO基的二季戊四醇(甲基)丙烯酸酯等。作為能夠以商業方式獲得的作為具有EO基的二季戊四醇(甲基)丙烯酸酯的化合物,例如可列舉:日本化藥股份有限公司製造的「DPEA-12」等。就解析度更優異的觀點而言,相對於(A)成分及(B)成分的固體成分總量,具有EO基的二季戊四醇(甲基)丙烯酸酯的含量可為1質量%~10質量%、或1.5質量%~5質量%。In addition, from the viewpoint of further improving the followability of the unevenness of the substrate, a compound obtained by reacting a polyol with an α,β-unsaturated carboxylic acid may be contained. As such a compound, a polyalkylene glycol di(meth)acrylate having both an EO group and a PO group in the molecule, dipentaerythritol (meth)acrylate having an EO group, or the like can be used. As a compound which can be obtained commercially, the dipentaerythritol (meth) acrylate which has an EO group, for example, "DPEA-12" manufactured by Nippon Kayaku Co., Ltd., etc. are mentioned. The content of the dipentaerythritol (meth) acrylate having an EO group may be 1% by mass to 10% by mass based on the total amount of the solid components of the component (A) and the component (B). Or 1.5% by mass to 5% by mass.

作為能夠以商業方式獲得的作為具有EO基及PO基兩者的聚伸烷基二醇二(甲基)丙烯酸酯的化合物,例如可列舉:具有EO基:6(平均值)及PO基:12(平均值)的聚伸烷基二醇二甲基丙烯酸酯(日立(Hitachi)化成股份有限公司製造的「FA-023M」、「FA-024M」)等。As a compound which can be obtained commercially as a polyalkylene glycol di(meth)acrylate having both an EO group and a PO group, for example, an EO group: 6 (average value) and a PO group are exemplified: 12 (average value) polyalkylene glycol dimethacrylate ("FA-023M", "FA-024M" manufactured by Hitachi Chemical Co., Ltd.) and the like.

再者,於具有EO基及PO基兩者的聚伸烷基二醇二(甲基)丙烯酸酯的分子內,EO基及PO基分別可連續地以嵌段方式存在,亦可無規地存在。另外,PO基可為氧基-正伸丙基或氧基異伸丙基的任一者。再者,於(聚)氧基異伸丙基中,伸丙基的二級碳可鍵結於氧原子上,一級碳亦可鍵結於氧原子上。Further, in the molecule of the polyalkylene glycol di(meth)acrylate having both the EO group and the PO group, the EO group and the PO group may be continuously present in a block manner, or may be randomly presence. Further, the PO group may be any of an oxy-n-propyl group or an oxy-iso-propyl group. Further, in the (poly)oxyisopropanyl group, the secondary carbon of the propyl group may be bonded to the oxygen atom, and the primary carbon may be bonded to the oxygen atom.

相對於(A)成分及(B)成分的固體成分總量100質量份,(B)成分的含量可設為20質量份~70質量份,25質量份~60質量份、或30質量份~50質量份。若(B)成分的含量為該範圍內,則除感光性樹脂組成物的解析度、密接性及抗蝕劑端部產生的抑制性變得良好以外,光感度及塗膜性亦變得良好。The content of the component (B) may be 20 parts by mass to 70 parts by mass, 25 parts by mass to 60 parts by mass, or 30 parts by mass to 100 parts by mass based on the total of the solid content of the component (A) and the component (B). 50 parts by mass. When the content of the component (B) is within this range, the resolution and adhesion of the photosensitive resin composition and the suppression of the edge portion of the resist are improved, and the light sensitivity and coating property are also improved. .

((C)光聚合起始劑) 本實施形態的感光性樹脂組成物可含有至少一種(C)光聚合起始劑(以下,亦稱為「(C)成分」)。(C)成分只要是可使(B)成分進行聚合的成分,則並無特別限制,可自通常所使用的光聚合起始劑中適宜選擇。(C) Photopolymerization Initiator The photosensitive resin composition of the present embodiment may contain at least one (C) photopolymerization initiator (hereinafter also referred to as "(C) component"). The component (C) is not particularly limited as long as it is a component capable of polymerizing the component (B), and can be appropriately selected from the usual photopolymerization initiators.

作為(C)成分,例如可列舉:2-苄基-2-二甲基胺基-1-(4-嗎啉基苯基)-丁酮-1、2-甲基-1-[4-(甲硫基)苯基]-2-嗎啉基-丙酮-1等芳香族酮,烷基蒽醌等醌類,安息香烷基醚等安息香醚化合物,安息香、烷基安息香等安息香化合物,苄基二甲基縮酮等苄基衍生物,2-(鄰氯苯基)-4,5-二苯基咪唑二聚體、2-(鄰氟苯基)-4,5-二苯基咪唑二聚體等2,4,5-三芳基咪唑二聚體,9-苯基吖啶、1,7-(9,9'-吖啶基)庚烷等吖啶衍生物等。該些可單獨使用一種、或將兩種以上組合使用。As the component (C), for example, 2-benzyl-2-dimethylamino-1-(4-morpholinylphenyl)-butanone-1, 2-methyl-1-[4- An aromatic ketone such as (methylthio)phenyl]-2-morpholinyl-acetone-1, an anthracene such as an alkyl hydrazine, a benzoin ether compound such as benzoin alkyl ether, a benzoin compound such as benzoin or alkylbenzoin, benzyl a benzyl derivative such as dimethyl ketal, 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer, 2-(o-fluorophenyl)-4,5-diphenylimidazole 2,4,5-triarylimidazole dimer such as dimer, acridine derivative such as 9-phenyl acridine or 1,7-(9,9'-acridinyl)heptane, and the like. These may be used alone or in combination of two or more.

該些之中,就解析性提昇的觀點而言,可含有2,4,5-三芳基咪唑二聚體。作為所述2,4,5-三芳基咪唑二聚體,例如可列舉:2-(鄰氯苯基)-4,5-二苯基咪唑二聚體、2-(鄰氯苯基)-4,5-雙-(間甲氧基苯基)咪唑二聚體、及2-(對甲氧基苯基)-4,5-二苯基咪唑二聚體。該些之中,就光感度穩定性提昇的觀點而言,可含有2-(鄰氯苯基)-4,5-二苯基咪唑二聚體。Among these, a 2,4,5-triarylimidazole dimer may be contained from the viewpoint of analytical improvement. As the 2,4,5-triarylimidazole dimer, for example, 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer, 2-(o-chlorophenyl)- 4,5-bis-(m-methoxyphenyl)imidazole dimer, and 2-(p-methoxyphenyl)-4,5-diphenylimidazole dimer. Among these, 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer may be contained from the viewpoint of improvement in photostability stability.

作為2,4,5-三芳基咪唑二聚體,例如2,2'-雙(2-氯苯基)-4,4',5,5'-四苯基聯咪唑可作為B-CIM(保土谷化學工業股份有限公司製造)而以商業方式獲得。As a 2,4,5-triarylimidazole dimer, for example 2,2'-bis(2-chlorophenyl)-4,4',5,5'-tetraphenylbiimidazole can be used as B-CIM ( It is commercially available from Hodogaya Chemical Industry Co., Ltd.).

就進一步提昇光感性及密接性,進而進一步抑制(C)成分的光吸收性的觀點而言,(C)成分可含有2,4,5-三芳基咪唑二聚體的至少一種,亦可含有2-(2-氯苯基)-4,5-二苯基咪唑二聚體。再者,2,4,5-三芳基咪唑二聚體的結構可為對稱,亦可為非對稱。The component (C) may contain at least one of 2,4,5-triarylimidazole dimers, and may further contain a 2,4,5-triarylimidazole dimer, from the viewpoint of further improving light absorption and adhesion and further suppressing light absorption of the component (C). 2-(2-Chlorophenyl)-4,5-diphenylimidazole dimer. Furthermore, the structure of the 2,4,5-triarylimidazole dimer may be symmetrical or asymmetric.

相對於(A)成分及(B)成分的固體成分總量100質量份,(C)成分的含量可為0.01質量份~30質量份、0.1質量份~10質量份、1質量份~7質量份、1質量份~6質量份、1質量份~5質量份、或2質量份~5質量份。若(C)成分的含量為0.01質量份以上,則存在光感性、解析性及密接性提昇的傾向,若為30質量份以下,則存在抗蝕劑形狀優異的傾向。The content of the component (C) may be 0.01 parts by mass to 30 parts by mass, 0.1 parts by mass to 10 parts by mass, and 1 part by mass to 7 parts by mass based on 100 parts by mass of the total of the solid components of the component (A) and the component (B). Parts, 1 part by mass to 6 parts by mass, 1 part by mass to 5 parts by mass, or 2 parts by mass to 5 parts by mass. When the content of the component (C) is 0.01 parts by mass or more, the photosensitivity, the resolution, and the adhesion tend to be improved. When the content is 30 parts by mass or less, the resist shape tends to be excellent.

((D)光增感劑) 本實施形態的感光性樹脂組成物可含有(D)光增感劑(以下,亦稱為「(D)成分」)。藉由含有(D)成分,可有效地利用曝光中所使用的光化射線的吸收波長。(D) Photosensitizer The photosensitive resin composition of the present embodiment may contain (D) a photosensitizer (hereinafter also referred to as "(D) component"). By containing the component (D), the absorption wavelength of the actinic rays used in the exposure can be effectively utilized.

作為(D)成分,例如可列舉:吡唑啉類、二烷基胺基二苯甲酮類、蒽類、香豆素類、氧雜蒽酮類、噁唑類、苯并噁唑類、噻唑類、苯并噻唑類、三唑類、二苯乙烯類、三嗪類、噻吩類、萘二甲醯亞胺類及三芳基胺類。該些可單獨使用一種、或將兩種以上組合使用。就可更有效地利用曝光中所使用的光化射線的吸收波長的觀點而言,(D)成分可含有吡唑啉類、蒽類、或二烷基胺基二苯甲酮類,其中,亦可含有二烷基胺基二苯甲酮類。作為能夠以商業方式獲得的作為二烷基胺基二苯甲酮類的化合物,例如可列舉:保土谷化學工業股份有限公司製造的「EAB」等。Examples of the component (D) include pyrazolines, dialkylaminobenzophenones, anthraquinones, coumarins, xanthones, oxazoles, and benzoxazoles. Thiazoles, benzothiazoles, triazoles, stilbenes, triazines, thiophenes, naphthyl imines and triarylamines. These may be used alone or in combination of two or more. The component (D) may contain a pyrazoline, an anthracene, or a dialkylaminobenzophenone, from the viewpoint of more effectively utilizing the absorption wavelength of actinic rays used in the exposure, wherein It may also contain dialkylaminobenzophenones. Examples of the dialkylamino benzophenone-based compound which can be obtained commercially are, for example, "EAB" manufactured by Hodogaya Chemical Industry Co., Ltd., and the like.

當含有(D)成分時,相對於(A)成分及(B)成分的固體成分總量100質量份,其含量可為1.0質量份以下、0.5質量份以下、0.15質量份以下、0.12質量份以下、或0.10質量份以下。若相對於(A)成分及(B)成分的固體成分總量100質量份,(D)成分的含量為1.0質量份以下,則存在可抑制抗蝕劑形狀及抗蝕劑端部產生性的惡化,並可使解析度變得更良好的傾向。另外,就容易獲得高光感性及高解析性的觀點而言,相對於(A)成分及(B)成分的固體成分總量100質量份,(D)成分的含量可為0.01質量份以上。When the component (D) is contained, the content thereof may be 1.0 part by mass or less, 0.5 part by mass or less, 0.15 part by mass or less, or 0.12 part by mass based on 100 parts by mass of the total solid content of the component (A) and the component (B). The following, or 0.10 parts by mass or less. When the content of the component (D) is 1.0 part by mass or less based on 100 parts by mass of the total solid content of the component (A) and the component (B), the resist shape and the end portion of the resist can be suppressed. Deterioration and a tendency to make the resolution better. In addition, the content of the component (D) may be 0.01 parts by mass or more based on 100 parts by mass of the total solid content of the component (A) and the component (B), from the viewpoint of the high light sensitivity and the high resolution.

((E)聚合抑制劑) 本實施形態的感光性樹脂組成物可含有(E)聚合抑制劑(以下,亦稱為「(E)成分」)。藉由含有(E)成分,而存在可將用於使感光性樹脂組成物進行光硬化所需的曝光量調整成最適合利用投影曝光機進行曝光的曝光量的傾向。(E) Polymerization Inhibitor The photosensitive resin composition of the present embodiment may contain (E) a polymerization inhibitor (hereinafter also referred to as "(E) component"). By containing the component (E), there is a tendency that the exposure amount required for photocuring the photosensitive resin composition can be adjusted to an exposure amount most suitable for exposure by a projection exposure machine.

就進一步提昇解析性的觀點而言,(E)成分可含有由下述通式(I)所表示的化合物。 [化2] In view of further improving the analytical property, the component (E) may contain a compound represented by the following formula (I). [Chemical 2]

通式(I)中,R5 表示鹵素原子、氫原子、碳數1~20的烷基、碳數3~10的環烷基、胺基、芳基、巰基、碳數1~10的烷基巰基、烷基的碳數為1~10的羧基烷基、碳數1~20的烷氧基或雜環基,m及n是以m為2以上的整數、n為0以上的整數、且m+n=6的方式選擇的整數,當n為2以上的整數時,R5 分別可相同,亦可不同。再者,芳基可由碳數1~20的烷基取代。In the formula (I), R 5 represents a halogen atom, a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an amine group, an aryl group, a decyl group or an alkyl group having 1 to 10 carbon atoms. a carboxyalkyl group having a carbon number of 1 to 10, an alkoxy group having 1 to 20 carbon atoms or a heterocyclic group, wherein m and n are integers of 2 or more, and n is an integer of 0 or more, And an integer selected by the mode of m+n=6, when n is an integer of 2 or more, R 5 may be the same or different. Further, the aryl group may be substituted with an alkyl group having 1 to 20 carbon atoms.

就進一步提昇與(A)成分的相容性的觀點而言,R5 可為氫原子或碳數1~20的烷基。作為由R5 所表示的碳數1~20的烷基,可為碳數1~4的烷基。就進一步提昇解析性的觀點而言,m可為2或3,亦可為2。From the viewpoint of further improving the compatibility with the component (A), R 5 may be a hydrogen atom or an alkyl group having 1 to 20 carbon atoms. The alkyl group having 1 to 20 carbon atoms represented by R 5 may be an alkyl group having 1 to 4 carbon atoms. For the purpose of further improving the clarification, m may be 2 or 3 or 2.

就進一步提昇解析性的觀點而言,由所述通式(I)所表示的化合物可為烷基兒茶酚。The compound represented by the above formula (I) may be an alkylcatechol from the viewpoint of further enhancing the analytical property.

相對於(A)成分及(B)成分的固體成分總量100質量份,(E)成分的含量可為0.03質量份~0.3質量份、0.03質量份~0.2質量份、0.05質量份~0.15質量份、或0.05質量份~0.1質量份。藉由將(E)成分的含量設為0.3質量份以下,而存在可縮短曝光時間,並可對量產的效率提昇作出貢獻的傾向。另外,藉由將(E)成分的含量設為0.03質量份以上,而存在可使光硬化部的光反應充分地進行,且因反應率提昇,而可抑制抗蝕劑膨潤性,並可使解析度變得更良好的傾向。The content of the component (E) may be 0.03 parts by mass to 0.3 parts by mass, 0.03 parts by mass to 0.2 parts by mass, and 0.05 parts by mass to 0.15% by mass based on 100 parts by mass of the total of the solid components of the component (A) and the component (B). Parts, or 0.05 parts by mass to 0.1 parts by mass. When the content of the component (E) is 0.3 parts by mass or less, the exposure time can be shortened, and the productivity of the mass production tends to be improved. In addition, when the content of the component (E) is 0.03 parts by mass or more, the photoreaction of the photocured portion can be sufficiently performed, and the reaction rate can be improved to suppress the swelling property of the resist. The resolution is getting better.

另外,相對於(A)成分的固體成分100質量份,(E)成分的含量可為0.05質量份~0.4質量份、0.05質量份~0.2質量份、或0.05質量份~0.1質量份。當相對於(A)成分,(E)成分的含量為0.05質量份以上時,存在可提昇感光性樹脂組成物的熱穩定性的傾向;當相對於(A)成分,(E)成分的含量為0.4質量份以下時,存在可抑制感光性樹脂組成物的黃色化的傾向。In addition, the content of the component (E) may be 0.05 parts by mass to 0.4 parts by mass, 0.05 parts by mass to 0.2 parts by mass, or 0.05 parts by mass to 0.1 parts by mass per 100 parts by mass of the solid component of the component (A). When the content of the component (E) is 0.05 parts by mass or more with respect to the component (A), there is a tendency to improve the thermal stability of the photosensitive resin composition; when it is relative to the component (A), the content of the component (E) When it is 0.4 parts by mass or less, the yellowing of the photosensitive resin composition tends to be suppressed.

(其他成分) 於本實施形態的感光性樹脂組成物中,相對於(A)成分及(B)成分的固體成分總量100質量份,視需要可分別含有0.01質量份~20質量份的國際公開第2015/177947中所記載的添加劑。該些添加劑可單獨使用一種、或將兩種以上組合使用。(Other components) The photosensitive resin composition of the present embodiment may contain 0.01 parts by mass to 20 parts by mass, respectively, per 100 parts by mass of the total solid content of the component (A) and the component (B). The additive described in 2015/177947 is disclosed. These additives may be used alone or in combination of two or more.

另外,為了提昇感光性樹脂組成物的處理性、或調節黏度及保存穩定性,本實施形態的感光性樹脂組成物視需要可包含有機溶劑的至少一種。作為所述有機溶劑,可無特別限制地使用通常所使用的有機溶劑。具體而言,例如可列舉國際公開第2015/177947中所記載的有機溶劑。該些可單獨使用一種、或將兩種以上組合使用。In addition, the photosensitive resin composition of the present embodiment may contain at least one of organic solvents as needed in order to improve the handleability of the photosensitive resin composition or to adjust the viscosity and the storage stability. As the organic solvent, an organic solvent which is usually used can be used without particular limitation. Specifically, for example, an organic solvent described in International Publication No. 2015/177947 can be mentioned. These may be used alone or in combination of two or more.

<保護層> 本實施形態的感光性元件可在感光層的與接觸中間層的面為相反側的面上積層保護層。作為保護層,例如可使用聚乙烯、聚丙烯等的聚合體膜等。另外,可使用與所述支撐膜相同的聚合體膜,亦可使用不同的聚合體膜。<Protective layer> The photosensitive element of the present embodiment can laminate a protective layer on the surface of the photosensitive layer opposite to the surface contacting the intermediate layer. As the protective layer, for example, a polymer film of polyethylene or polypropylene or the like can be used. Further, the same polymer film as the support film may be used, or a different polymer film may be used.

以下,對製造依序積層有支撐膜、中間層、感光層及保護層的感光性元件的方法進行說明。Hereinafter, a method of manufacturing a photosensitive element in which a support film, an intermediate layer, a photosensitive layer, and a protective layer are sequentially laminated will be described.

<感光性元件的製造方法> 首先,例如以固體成分含量變成10質量%~20質量%的方式,向增溫至70℃~90℃的水中緩慢地添加含有聚乙烯醇的水溶性樹脂,並攪拌1小時左右來使其均勻地溶解,而獲得含有聚乙烯醇的中間層形成用樹脂組成物。再者,於本說明書中,所謂「固體成分」,是指樹脂組成物的除水、有機溶劑等進行揮發的物質以外的不揮發成分。即,是指於乾燥步驟中不揮發而殘留的除水、有機溶劑等溶劑以外的成分,亦包括於25℃左右的室溫下為液狀、糖稀狀及蠟狀的成分。<Method for Producing Photosensitive Element> First, for example, a water-soluble resin containing polyvinyl alcohol is slowly added to water heated to 70° C. to 90° C. so that the solid content is 10% by mass to 20% by mass. The mixture was stirred for about 1 hour to be uniformly dissolved to obtain a resin composition for forming an intermediate layer containing polyvinyl alcohol. In the present specification, the term "solid content" means a non-volatile component other than a substance which volatilizes water, an organic solvent, etc. of a resin composition. In other words, it means a component other than a solvent such as water removal or an organic solvent which remains without being volatilized in the drying step, and also includes a component which is liquid, saccharide or waxy at room temperature of about 25 °C.

其次,將中間層形成用樹脂組成物塗佈於支撐膜上,並進行乾燥而形成中間層。再者,當於支撐膜的兩面中潤滑劑等粒子的密度不同時,可使用中間層形成用樹脂組成物於支撐膜的粒子少的面上形成中間層。所述中間層形成用樹脂組成物朝支撐膜上的塗佈例如可藉由輥塗、缺角輪塗佈、凹版塗佈、氣刀塗佈、模塗、棒塗、噴塗等公知的方法來進行。Next, the resin composition for forming an intermediate layer is applied onto a support film and dried to form an intermediate layer. Further, when the density of the particles such as the lubricant is different on both surfaces of the support film, the intermediate layer may be formed on the surface of the support film having a small amount of the resin composition for forming the intermediate layer. The coating of the resin composition for forming an intermediate layer onto the support film can be carried out, for example, by a known method such as roll coating, face wheel coating, gravure coating, air knife coating, die coating, bar coating, spray coating, or the like. get on.

另外,只要可去除水等溶劑的至少一部分,則所塗佈的中間層形成用樹脂組成物的乾燥並無特別限制,但可於70℃~150℃下乾燥5分鐘~30分鐘。乾燥後,就防止其後步驟中溶劑的擴散的觀點而言,中間層中的殘存溶劑量可設為2質量%以下。In addition, as long as at least a part of the solvent such as water can be removed, the drying of the resin composition for forming an intermediate layer to be applied is not particularly limited, but it can be dried at 70 to 150 ° C for 5 minutes to 30 minutes. After drying, the amount of residual solvent in the intermediate layer can be 2% by mass or less from the viewpoint of preventing the solvent from diffusing in the subsequent step.

繼而,亦可於形成有中間層的支撐膜的中間層上,與中間層形成用樹脂組成物的塗佈同樣地塗佈感光性樹脂組成物並進行乾燥,而於中間層上形成感光層。藉由將保護層層壓於以所述方式形成的感光層上,可製作依序具備支撐膜、中間層、感光層、及保護層的感光性元件。另外,藉由將在支撐膜上形成有中間層者與在保護層上形成有感光層者貼合,亦可獲得依序具備支撐膜、中間層、感光層、及保護層的感光性元件。當藉由此種貼合來製作本實施形態的感光性元件時,存在作業性提昇的傾向。Then, a photosensitive resin composition may be applied to the intermediate layer of the support film on which the intermediate layer is formed, and the photosensitive resin composition may be applied in the same manner as the application of the resin composition for forming the intermediate layer, and a photosensitive layer may be formed on the intermediate layer. By laminating the protective layer on the photosensitive layer formed as described above, a photosensitive element having a support film, an intermediate layer, a photosensitive layer, and a protective layer in this order can be produced. Further, by bonding an intermediate layer formed on the support film to a photosensitive layer formed on the protective layer, a photosensitive element having a support film, an intermediate layer, a photosensitive layer, and a protective layer in this order can be obtained. When the photosensitive element of the present embodiment is produced by such bonding, workability tends to be improved.

感光性元件中的感光層的厚度可根據用途而適宜選擇,但以乾燥後的厚度計,可為1 μm~200 μm、5 μm~100 μm、或10 μm~50 μm。藉由感光層的厚度為1 μm以上,而存在工業式的塗敷變得容易,且生產性提昇的傾向。另外,當感光層的厚度為200 μm以下時,因光感性高、抗蝕劑底部的光硬化性優異,故存在可形成解析度及縱橫比優異的抗蝕劑圖案的傾向。The thickness of the photosensitive layer in the photosensitive element can be appropriately selected depending on the use, but it may be 1 μm to 200 μm, 5 μm to 100 μm, or 10 μm to 50 μm in terms of the thickness after drying. When the thickness of the photosensitive layer is 1 μm or more, industrial coating tends to be easy, and productivity is improved. In addition, when the thickness of the photosensitive layer is 200 μm or less, the photosensitivity is high and the photocurability of the bottom of the resist is excellent, so that a resist pattern having excellent resolution and aspect ratio tends to be formed.

感光性元件中的感光層於110℃下的熔融黏度可根據與感光層接觸的基材的種類而適宜選擇,但乾燥後,於110℃下可為50 Pa・s~10000 Pa・s、100 Pa・s~5000 Pa・s、或200 Pa・s~1000 Pa・s。若110℃下的熔融黏度為50 Pa・s以上,則存在於積層步驟中不會產生皺褶及空隙,且生產性提昇的傾向。另外,若110℃下的熔融黏度為10000 Pa・s以下,則存在於積層步驟中與基底的黏著性提昇,且減少黏著不良的傾向。The melt viscosity of the photosensitive layer in the photosensitive element at 110 ° C can be appropriately selected depending on the type of the substrate that is in contact with the photosensitive layer, but after drying, it can be 50 Pa·s to 10000 Pa·s at 100 ° C, 100. Pa·s to 5000 Pa·s, or 200 Pa·s to 1000 Pa·s. When the melt viscosity at 110 ° C is 50 Pa·s or more, wrinkles and voids do not occur in the lamination step, and productivity tends to be improved. In addition, when the melt viscosity at 110 ° C is 10,000 Pa·s or less, the adhesion to the substrate in the lamination step is increased, and the adhesion tends to be reduced.

本實施形態的感光性元件例如可適宜地用於後述的抗蝕劑圖案的形成方法及印刷配線板的製造方法。The photosensitive element of the present embodiment can be suitably used, for example, in a method of forming a resist pattern to be described later and a method of producing a printed wiring board.

[抗蝕劑圖案的形成方法] 本實施形態的抗蝕劑圖案的形成方法包括:(i)使用所述感光性元件,將所述感光層與所述中間層及所述支撐膜以該順序配置於基板上的步驟(以下,亦稱為「(i)感光層及中間層形成步驟」);(ii)將所述支撐膜去除,利用光化射線隔著所述中間層對所述感光層進行曝光的步驟(以下,亦稱為「(ii)曝光步驟」);以及(iii)自所述基板上去除所述感光層的未硬化部及所述中間層的步驟(以下,亦稱為「(iii)顯影步驟」);視需要亦可包括其他步驟。再者,所謂抗蝕劑圖案,可稱為感光性樹脂組成物的光硬化物圖案,亦可稱為凹凸圖案。另外,對應於目的,本實施形態中的抗蝕劑圖案可用作抗蝕劑,亦可用於保護膜等其他用途。[Method of Forming Resist Pattern] The method of forming a resist pattern according to the present embodiment includes: (i) using the photosensitive element, and the photosensitive layer and the intermediate layer and the support film in this order a step of being disposed on the substrate (hereinafter also referred to as "(i) photosensitive layer and intermediate layer forming step"); (ii) removing the support film, and sensitizing the photosensitive layer through the intermediate layer a step of exposing the layer (hereinafter also referred to as "(ii) exposure step"); and (iii) a step of removing the uncured portion and the intermediate layer of the photosensitive layer from the substrate (hereinafter also referred to as It is "(iii) development step"); other steps may be included as needed. Further, the resist pattern may be referred to as a photocured material pattern of a photosensitive resin composition, and may also be referred to as a concavo-convex pattern. Further, the resist pattern in the present embodiment can be used as a resist in accordance with the purpose, and can be used for other uses such as a protective film.

((i)感光層及中間層形成步驟) 於感光層及中間層形成步驟中,使用所述感光性元件於基板上形成感光層及中間層。作為所述基板,並無特別限制,通常可使用具備絕緣層與形成於絕緣層上的導體層的電路形成用基板、或合金基材等壓料墊(導線架用基材)等。((i) Photosensitive layer and intermediate layer forming step) In the photosensitive layer and intermediate layer forming step, a photosensitive layer and an intermediate layer are formed on the substrate using the photosensitive element. The substrate is not particularly limited, and a substrate for circuit formation including a conductive layer and a conductor layer formed on the insulating layer, or a pad (such as a substrate for a lead frame) such as an alloy substrate can be used.

作為於基板上形成感光層及中間層的方法,例如當使用具有保護層的感光性元件時,可於去除保護層後,一面進行加熱一面將感光性元件的感光層壓接於基板上,藉此於基板上形成感光層及中間層。藉此,可獲得依序具備基板、感光層、中間層、及支撐膜的積層體。As a method of forming a photosensitive layer and an intermediate layer on a substrate, for example, when a photosensitive element having a protective layer is used, after the protective layer is removed, the photosensitive layer of the photosensitive element is bonded to the substrate while being heated. The photosensitive layer and the intermediate layer are formed on the substrate. Thereby, a laminate including the substrate, the photosensitive layer, the intermediate layer, and the support film in this order can be obtained.

當使用感光性元件來進行感光層及中間層形成步驟時,就密接性及追隨性的觀點而言,亦可於減壓下進行。壓接時的加熱可於70℃~130℃的溫度下進行,壓接可於0.1 MPa~1.0 MPa(1 kgf/cm2 ~10 kgf/cm2 )的壓力下進行,但該些條件可視需要而適宜選擇。再者,若將感光性元件的感光層加熱至70℃~130℃,則無需事先對基板進行預熱處理,但為了進一步提昇密接性及追隨性,亦可進行基板的預熱處理。When the photosensitive layer and the intermediate layer forming step are carried out using a photosensitive element, it can be carried out under reduced pressure from the viewpoint of adhesion and followability. The heating at the time of crimping can be carried out at a temperature of 70 ° C to 130 ° C, and the crimping can be carried out at a pressure of 0.1 MPa to 1.0 MPa (1 kgf / cm 2 to 10 kgf / cm 2 ), but these conditions may be required And suitable for selection. Further, when the photosensitive layer of the photosensitive element is heated to 70 to 130 ° C, it is not necessary to preheat the substrate in advance, but in order to further improve adhesion and followability, preheating of the substrate may be performed.

((ii)曝光步驟) 於曝光步驟中,將支撐膜去除,利用光化射線隔著中間層對感光層進行曝光。藉此,照射有光化射線的曝光部可進行光硬化而形成光硬化部(潛像),另外,未照射有光化射線的未曝光部亦可進行光硬化而形成光硬化部。當使用所述感光性元件來形成感光層及中間層時,將感光層上所存在的支撐膜剝離後,進行曝光。藉由隔著中間層對感光層進行曝光,解析性提昇,可進一步抑制抗蝕劑圖案的微小的脫落。((ii) Exposure Step) In the exposure step, the support film is removed, and the photosensitive layer is exposed through the intermediate layer by actinic rays. Thereby, the exposed portion irradiated with the actinic ray can be photocured to form a photocured portion (latent image), and the unexposed portion to which the actinic ray is not irradiated can be photocured to form a photocured portion. When the photosensitive layer and the intermediate layer are formed using the photosensitive element, the support film existing on the photosensitive layer is peeled off and exposed. By exposing the photosensitive layer through the intermediate layer, the resolution is improved, and the fine fall of the resist pattern can be further suppressed.

作為曝光方法,可應用公知的曝光方式,例如可列舉:隔著被稱為原圖(artwork)的負型遮罩圖案或正型遮罩圖案,呈圖像狀地照射光化射線的方法(遮罩曝光方式);雷射直接成像(Laser Direct Imaging,LDI)曝光方式;或使用投影有光罩的圖像的光化射線並隔著透鏡呈圖像狀地照射的方法(投影曝光方式)等。其中,就可進一步抑制抗蝕劑圖案的微小的脫落的產生的觀點而言,可使用投影曝光方式。即,本實施形態的感光性元件等適用於投影曝光方式。再者,所謂投影曝光方式,亦可稱為使用能量衰減的光化射線的曝光方式。As the exposure method, a known exposure method can be applied, and for example, a method of irradiating an actinic ray in an image form via a negative mask pattern or a positive mask pattern called an artwork is exemplified ( Mask exposure method); Laser Direct Imaging (LDI) exposure method; or method of using an actinic ray of an image projected with a reticle and illuminating an image through a lens (projection exposure mode) Wait. Among them, a projection exposure method can be used from the viewpoint of further suppressing the occurrence of minute detachment of the resist pattern. That is, the photosensitive element or the like of the present embodiment is applied to a projection exposure method. Further, the projection exposure method may also be referred to as an exposure method using actinic rays of energy attenuation.

作為光化射線的光源,只要是通常所使用的公知的光源,則並無特別限制,例如可使用:碳弧燈,水銀蒸氣弧燈,超高壓水銀燈,高壓水銀燈,氙燈,氬氣雷射等氣體雷射、釔鋁石榴石(Yttrium Aluminum Garnet,YAG)雷射等固態雷射、氮化鎵系藍紫色雷射等半導體雷射等有效地放射紫外線的光源等。另外,亦可使用照相用泛光燈泡、太陽燈等有效地放射可見光的光源等。該些之中,就平衡性良好地提昇解析性及對準性的觀點而言,可使用可放射曝光波長365 nm的i射線單色光的光源、可放射曝光波長405 nm的h射線單色光的光源、或可放射ihg混合射線的曝光波長的光化射線的光源,其中,亦可使用可放射曝光波長365 nm的i射線單色光的光源。作為可放射曝光波長365 nm的i射線單色光的光源,例如可列舉:超高壓水銀燈等。The light source of the actinic ray is not particularly limited as long as it is a commonly used light source, and for example, a carbon arc lamp, a mercury vapor arc lamp, an ultrahigh pressure mercury lamp, a high pressure mercury lamp, a xenon lamp, an argon laser, or the like can be used. A gas source such as a gas laser, a solid-state laser such as a Yttrium Aluminum Garnet (YAG) laser, or a semiconductor laser such as a gallium nitride-based blue-violet laser. Further, a light source such as a photographic floodlight bulb or a sun light that efficiently emits visible light or the like can be used. Among these, in terms of improving the analyticity and alignment well in a well-balanced manner, a light source capable of radiating an i-ray monochromatic light having a wavelength of 365 nm and a h-ray single color capable of radiating an exposure wavelength of 405 nm can be used. A light source of light or a light source that emits an actinic ray of an exposure wavelength of an ihg mixed ray, and a light source that emits i-ray monochromatic light having a wavelength of 365 nm may also be used. Examples of the light source that can emit the i-ray monochromatic light having a wavelength of 365 nm can be, for example, an ultrahigh pressure mercury lamp.

((iii)顯影步驟) 於顯影步驟中,自基板上去除所述感光層的未硬化部及中間層。藉由顯影步驟,於基板上形成包含所述感光層進行光硬化而成的光硬化部的抗蝕劑圖案。當中間層為水溶性時,可進行水洗來去除中間層後,利用顯影液去除所述光硬化部以外的未硬化部,當中間層對於顯影液具有溶解性時,可利用顯影液將所述光硬化部以外的未硬化部與中間層一同去除。顯影方法可列舉濕式顯影。((iii) Developing Step) In the developing step, the uncured portion and the intermediate layer of the photosensitive layer are removed from the substrate. A resist pattern including a photocured portion obtained by photohardening the photosensitive layer is formed on a substrate by a developing step. When the intermediate layer is water-soluble, after the intermediate layer is removed by water washing, the uncured portion other than the photo-cured portion is removed by a developing solution, and when the intermediate layer has solubility to the developing solution, the developing solution may be used. The uncured portion other than the photocured portion is removed together with the intermediate layer. The development method can be exemplified by wet development.

於濕式顯影的情況下,可使用對應於感光性樹脂組成物的顯影液,藉由公知的濕式顯影方法來進行顯影。作為濕式顯影方法,例如可列舉:浸漬方式,覆液方式,高壓噴霧方式,利用刷洗、拍擊、刮削、搖動浸漬等的方法等,就解析性提昇的觀點而言,最合適的是高壓噴霧方式。該些濕式顯影方法可單獨使用一種來進行顯影、或將兩種以上的方法組合來進行顯影。In the case of wet development, development can be carried out by a known wet development method using a developer corresponding to the photosensitive resin composition. Examples of the wet development method include a immersion method, a liquid coating method, a high pressure spray method, a method using brushing, slap, scraping, shaking, etc., and the most suitable one is high pressure from the viewpoint of improving the analytical property. Spray method. These wet development methods may be developed by using one type alone or by combining two or more methods.

顯影液對應於所述感光性樹脂組成物的構成而適宜選擇。例如可列舉:鹼性水溶液及有機溶劑顯影液。The developer is appropriately selected in accordance with the configuration of the photosensitive resin composition. For example, an alkaline aqueous solution and an organic solvent developing solution are mentioned.

就安全且穩定、操作性良好的觀點而言,作為顯影液,可使用鹼性水溶液。作為鹼性水溶液的鹼,例如可使用:鋰、鈉或鉀的氫氧化物等氫氧化鹼,鋰、鈉、鉀或銨的碳酸鹽或碳酸氫鹽等碳酸鹼,磷酸鉀、磷酸鈉等鹼金屬磷酸鹽,焦磷酸鈉、焦磷酸鉀等鹼金屬焦磷酸鹽,硼酸鈉,偏矽酸鈉,氫氧化四甲基銨,乙醇胺,乙二胺,二乙三胺,2-胺基-2-羥基甲基-1,3-丙二醇,1,3-二胺基-2-丙醇及嗎啉。From the viewpoint of safety, stability, and workability, an alkaline aqueous solution can be used as the developer. As the base of the alkaline aqueous solution, for example, an alkali hydroxide such as a hydroxide of lithium, sodium or potassium, a carbonate such as lithium, sodium, potassium or ammonium carbonate or a hydrogencarbonate, or a base such as potassium phosphate or sodium phosphate can be used. Metal phosphate, alkali metal pyrophosphate such as sodium pyrophosphate or potassium pyrophosphate, sodium borate, sodium metasilicate, tetramethylammonium hydroxide, ethanolamine, ethylenediamine, diethylenetriamine, 2-amino-2 - hydroxymethyl-1,3-propanediol, 1,3-diamino-2-propanol and morpholine.

作為用於顯影的鹼性水溶液,可使用:0.1質量%~5質量%碳酸鈉的稀薄溶液、0.1質量%~5質量%碳酸鉀的稀薄溶液、0.1質量%~5質量%氫氧化鈉的稀薄溶液、0.1質量%~5質量%四硼酸鈉的稀薄溶液等。另外,用於顯影的鹼性水溶液的pH可設為9~11的範圍,鹼性水溶液的溫度可結合感光層的顯影性來調節。另外,於鹼性水溶液中,例如可混入表面活性劑、消泡劑、用以促進顯影的少量的有機溶劑等。再者,作為鹼性水溶液中所使用的有機溶劑,例如可列舉:3-丙酮醇、丙酮、乙酸乙酯、具有碳數1~4的烷氧基的烷氧基乙醇、乙醇、異丙醇、丁醇、二乙二醇單甲基醚、二乙二醇單乙基醚及二乙二醇單丁基醚。As the alkaline aqueous solution for development, a thin solution of 0.1% by mass to 5% by mass of sodium carbonate, a thin solution of 0.1% by mass to 5% by mass of potassium carbonate, and a thin portion of 0.1% by mass to 5% by mass of sodium hydroxide can be used. A solution, a thin solution of 0.1% by mass to 5% by mass of sodium tetraborate or the like. Further, the pH of the alkaline aqueous solution used for development may be in the range of 9 to 11, and the temperature of the alkaline aqueous solution may be adjusted in accordance with the developability of the photosensitive layer. Further, in the alkaline aqueous solution, for example, a surfactant, an antifoaming agent, a small amount of an organic solvent for promoting development, or the like may be mixed. In addition, examples of the organic solvent used in the alkaline aqueous solution include 3-acetone alcohol, acetone, ethyl acetate, alkoxyethanol having an alkoxy group having 1 to 4 carbon atoms, ethanol, and isopropanol. Butanol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether and diethylene glycol monobutyl ether.

作為有機溶劑顯影液中所使用的有機溶劑,例如可列舉:1,1,1-三氯乙烷、N-甲基吡咯啶酮、N,N-二甲基甲醯胺、環己酮、甲基異丁基酮及γ-丁內酯。就防止著火的觀點而言,該些有機溶劑能夠以成為1質量%~20質量%的範圍的方式添加水來作為有機溶劑顯影液。Examples of the organic solvent used in the organic solvent developing solution include 1,1,1-trichloroethane, N-methylpyrrolidone, N,N-dimethylformamide, and cyclohexanone. Methyl isobutyl ketone and γ-butyrolactone. In view of the prevention of the ignition, the organic solvent can be added as an organic solvent developer so as to be in the range of 1% by mass to 20% by mass.

(其他步驟) 於本實施形態的抗蝕劑圖案的形成方法中,在顯影步驟中將未硬化部去除後,視需要亦可包含進行60℃~250℃下的加熱或0.2 J/cm2 ~10 J/cm2 的曝光量下的曝光,藉此使抗蝕劑圖案進一步硬化的步驟。(Other Steps) In the method for forming a resist pattern according to the present embodiment, after the uncured portion is removed in the developing step, heating at 60 ° C to 250 ° C or 0.2 J/cm 2 may be included as needed. Exposure at an exposure amount of 10 J/cm 2 , whereby the resist pattern is further hardened.

[積層體] 本實施形態的積層體依序具備基板、感光層、及中間層,於所述中間層的與感光層側為相反側的面上可進而具備支撐膜。另外,於本實施形態的積層體中,中間層的與感光層側為相反側的面中的直徑(其中,當凹部的形狀並非圓形時,是指其形狀的外接圓的直徑)為3 μm以上的凹部的數量為30個/mm2 以下。另外,該直徑為3 μm以上的凹部的數量可為25個/mm2 以下、20個/mm2 以下、10個/mm2 以下、5個/mm2 以下、或1個/mm2 以下。所述凹部的數量的下限值為0個/mm2 。再者,凹部的數量可使用掃描型電子顯微鏡來測定。藉由將直徑為3 μm以上的凹部的數量設為30個/mm2 以下,於使用該積層體所形成的抗蝕劑圖案中難以產生微小的脫落,而可形成微小的脫落少的抗蝕劑圖案。而且,若將此種積層體用於印刷配線板的製造,則可抑制蝕刻時產生的開路不良及鍍敷時產生的短路不良,並可抑制印刷配線板的製造良率下降。另外,就可形成更微小的脫落少的抗蝕劑圖案的觀點而言,直徑為1.2 μm以上、未滿3 μm的凹部的數量可為1000個/mm2 以下、500個/mm2 以下、或10個/mm2 以下,但所述凹部的數量的下限值為0個/mm2 。另外,就相同的觀點而言,凹部的深度可為5 μm以下。另外,就相同的觀點而言,於所述積層體中,在中間層的與感光層為相反側的面上可不具有支撐膜,即於積層體中,中間層的與感光層為相反側的面可露出。[Laminate] The laminate of the present embodiment includes a substrate, a photosensitive layer, and an intermediate layer in this order, and a support film may be further provided on a surface of the intermediate layer opposite to the photosensitive layer side. Further, in the laminated body of the present embodiment, the diameter of the surface of the intermediate layer opposite to the photosensitive layer side (wherein, when the shape of the concave portion is not circular, the diameter of the circumcircle of the shape) is 3 The number of the recesses of μm or more is 30/mm 2 or less. Further, the number of the concave portions having a diameter of 3 μm or more may be 25 pieces/mm 2 or less, 20 pieces/mm 2 or less, 10 pieces/mm 2 or less, 5 pieces/mm 2 or less, or 1 piece/mm 2 or less. The lower limit of the number of the recesses is 0/mm 2 . Further, the number of the concave portions can be measured using a scanning electron microscope. By setting the number of the recesses having a diameter of 3 μm or more to 30/mm 2 or less, it is difficult to cause minute peeling in the resist pattern formed using the laminate, and it is possible to form a small resist with little peeling off. Agent pattern. In addition, when such a laminate is used for the production of a printed wiring board, it is possible to suppress an open failure caused during etching and a short-circuit defect occurring during plating, and it is possible to suppress a decrease in the yield of the printed wiring board. In addition, from the viewpoint of forming a resist pattern having less fine peeling, the number of recesses having a diameter of 1.2 μm or more and less than 3 μm may be 1000/mm 2 or less and 500/mm 2 or less. Or 10 / mm 2 or less, but the lower limit of the number of the recesses is 0 / mm 2 . Further, from the same viewpoint, the depth of the concave portion may be 5 μm or less. Further, from the same viewpoint, in the laminated body, the support film may not be provided on the surface of the intermediate layer opposite to the photosensitive layer, that is, in the laminated body, the intermediate layer is opposite to the photosensitive layer. The face can be exposed.

中間層的與感光層為相反側的面中的直徑為3 μm以上的凹部的數量可藉由減少支撐膜中所含有的粒子的數量、特別是直徑為5 μm以上的粒子的數量而減少。同樣地,中間層的與感光層為相反側的面中的直徑為1.2 μm以上、未滿3 μm的凹部的數量可藉由減少支撐膜中所含有的粒子的數量、特別是直徑為2 μm以上、未滿5 μm的粒子的數量而減少。The number of the recesses having a diameter of 3 μm or more in the surface of the intermediate layer opposite to the photosensitive layer can be reduced by reducing the number of particles contained in the support film, particularly the number of particles having a diameter of 5 μm or more. Similarly, the number of the recesses having a diameter of 1.2 μm or more and less than 3 μm in the surface of the intermediate layer opposite to the photosensitive layer can be reduced by reducing the number of particles contained in the support film, particularly 2 μm in diameter. The number of particles above 5 μm is reduced.

直徑為3 μm以上的凹部的數量可藉由使用掃描型電子顯微鏡(例如,SU-1500(日立製作所股份有限公司製造))進行觀察來測定。觀察可於任意的10個部位進行。測定區域設為1 mm見方的大小,對任意的10個部位進行測定,並將其平均值設為中間層中的直徑為3 μm以上的凹部的數量。再者,當積層體具備支撐膜時,可將支撐膜剝離後進行測定。The number of the recesses having a diameter of 3 μm or more can be measured by observation using a scanning electron microscope (for example, SU-1500 (manufactured by Hitachi, Ltd.)). Observation can be performed at any of 10 locations. The measurement area was set to a size of 1 mm square, and arbitrary ten parts were measured, and the average value was made into the number of the recessed part of the intermediate layer of the diameter of 3 micrometers or more. Further, when the laminate has a support film, the support film can be peeled off and then measured.

作為所述基板,並無特別限制,但可使用與所述抗蝕劑圖案的形成方法中所列舉的基板相同的基板。就解析性提昇的觀點而言,所述基板的表面粗糙度Rz可為100 nm以下、80 nm以下、或50 nm以下。另外,所述基板的表面粗糙度Rz並無特別限制,但可為1 nm以上。The substrate is not particularly limited, and the same substrate as that exemplified in the method for forming the resist pattern can be used. The surface roughness Rz of the substrate may be 100 nm or less, 80 nm or less, or 50 nm or less from the viewpoint of analytical improvement. Further, the surface roughness Rz of the substrate is not particularly limited, but may be 1 nm or more.

本實施形態的積層體亦可藉由以所述感光性元件的感光層密接於基板上的方式將所述感光性元件壓接於基板上來製造。本實施形態的積層體可用於如下的抗蝕劑圖案的形成方法,該抗蝕劑圖案的形成方法包括:利用光化射線,隔著積層體中的中間層對感光層進行曝光的步驟;以及自基板上去除所述感光層的未硬化部及所述中間層的步驟。藉此,可形成微小的脫落少的抗蝕劑圖案。The laminate of the present embodiment can also be produced by pressure-bonding the photosensitive element to a substrate so that the photosensitive layer of the photosensitive element is in close contact with the substrate. The laminate of the present embodiment can be used in a method of forming a resist pattern including a step of exposing a photosensitive layer via an intermediate layer in a laminate by using actinic rays; The step of removing the uncured portion of the photosensitive layer and the intermediate layer from the substrate. Thereby, a resist pattern having a small amount of detachment can be formed.

[印刷配線板的製造方法] 本實施形態的印刷配線板的製造方法包括對藉由所述抗蝕劑圖案的形成方法而形成有抗蝕劑圖案的基板進行蝕刻處理或鍍敷處理,而形成導體圖案的步驟,視需要亦可包括抗蝕劑圖案去除步驟等其他步驟。本實施形態的印刷配線板的製造方法藉由使用利用所述感光性元件或積層體的抗蝕劑圖案的形成方法,而可適宜地用於導體圖案的形成,其中,更適合應用於藉由鍍敷處理來形成導體圖案的方法。再者,導體圖案亦可稱為電路。[Manufacturing Method of Printed Wiring Board] The method of manufacturing a printed wiring board according to the present embodiment includes forming an etching treatment or a plating treatment on a substrate on which a resist pattern is formed by the method of forming the resist pattern. The step of the conductor pattern may include other steps such as a resist pattern removing step as needed. The method for producing a printed wiring board according to the present embodiment can be suitably used for the formation of a conductor pattern by using a method of forming a resist pattern using the photosensitive element or the laminated body, and is more suitably applied by A method of forming a conductor pattern by plating. Furthermore, the conductor pattern can also be referred to as a circuit.

於蝕刻處理中,將形成於具備導體層的基板上的抗蝕劑圖案作為遮罩,將未由抗蝕劑包覆的基板的導體層蝕刻去除,而形成導體圖案。In the etching process, a resist pattern formed on a substrate having a conductor layer is used as a mask, and a conductor layer of a substrate not covered with a resist is etched away to form a conductor pattern.

蝕刻處理的方法對應於應去除的導體層而適宜選擇。作為蝕刻液,例如可列舉氯化銅溶液、氯化鐵溶液、鹼蝕刻溶液、過氧化氫系蝕刻液等,就蝕刻因子良好的觀點而言,可使用氯化鐵溶液。The etching treatment method is appropriately selected corresponding to the conductor layer to be removed. Examples of the etching liquid include a copper chloride solution, a ferric chloride solution, an alkali etching solution, and a hydrogen peroxide-based etching liquid. From the viewpoint of a good etching factor, a ferric chloride solution can be used.

另一方面,於鍍敷處理中,將形成於具備導體層的基板上的抗蝕劑圖案作為遮罩,於未由抗蝕劑包覆的基板的導體層上鍍敷銅或焊料等。鍍敷處理後,藉由後述的抗蝕劑圖案的去除來去除抗蝕劑,進而對由該抗蝕劑包覆的導體層進行蝕刻,而形成導體圖案。On the other hand, in the plating treatment, a resist pattern formed on a substrate having a conductor layer is used as a mask, and copper or solder is plated on the conductor layer of the substrate not covered with the resist. After the plating treatment, the resist is removed by removal of a resist pattern to be described later, and the conductor layer covered with the resist is further etched to form a conductor pattern.

作為鍍敷處理的方法,可為電解鍍敷處理,亦可為無電解鍍敷處理,其中,亦可為無電解鍍敷處理。作為無電解鍍敷處理,例如可列舉:硫酸銅鍍敷及焦磷酸銅鍍敷等銅鍍敷,高均一性(high throw)焊料鍍敷等焊料鍍敷,瓦特浴(watts bath)(硫酸鎳-氯化鎳)鍍敷及胺磺酸鎳鍍敷等鎳鍍敷,硬金鍍敷及軟金鍍敷等金鍍敷。The plating treatment may be an electrolytic plating treatment or an electroless plating treatment, and may be an electroless plating treatment. Examples of the electroless plating treatment include copper plating such as copper sulfate plating and copper pyrophosphate plating, solder plating such as high throw solder plating, and watts bath (nickel sulfate). - Nickel plating such as nickel chloride plating and nickel sulfamate plating, gold plating such as hard gold plating and soft gold plating.

於所述蝕刻處理或鍍敷處理後,將基板上的抗蝕劑圖案去除。抗蝕劑圖案的去除例如可藉由鹼性比用於所述顯影步驟的鹼性水溶液更強的水溶液來進行剝離。作為該強鹼性的水溶液,例如可使用1質量%~10質量%氫氧化鈉水溶液、1質量%~10質量%氫氧化鉀水溶液等。該些之中,亦可使用1質量%~5質量%氫氧化鈉水溶液或氫氧化鉀水溶液。After the etching treatment or the plating treatment, the resist pattern on the substrate is removed. The removal of the resist pattern can be performed, for example, by an aqueous solution which is more alkaline than the aqueous alkaline solution used in the development step. As the strongly alkaline aqueous solution, for example, a 1% by mass to 10% by mass aqueous sodium hydroxide solution, a 1% by mass to 10% by mass aqueous potassium hydroxide solution, or the like can be used. Among these, a 1% by mass to 5% by mass aqueous sodium hydroxide solution or an aqueous potassium hydroxide solution can also be used.

作為抗蝕劑圖案的去除方式,例如可列舉浸漬方式及噴霧方式,該些可單獨使用,亦可併用。Examples of the method of removing the resist pattern include a immersion method and a spray method, and these may be used singly or in combination.

當實施鍍敷處理後將抗蝕劑圖案去除時,進而藉由蝕刻處理來對由抗蝕劑包覆的導體層進行蝕刻,而形成導體圖案,藉此可製造所期望的印刷配線板。此時的蝕刻處理的方法對應於應去除的導體層而適宜選擇。例如可應用所述蝕刻液。When the resist pattern is removed after the plating treatment is performed, the conductor layer covered with the resist is etched by an etching process to form a conductor pattern, whereby a desired printed wiring board can be manufactured. The method of the etching treatment at this time is appropriately selected in accordance with the conductor layer to be removed. For example, the etching solution can be applied.

本實施形態的印刷配線板的製造方法不僅可應用於單層印刷配線板的製造,亦可應用於多層印刷配線板的製造,另外,亦可應用於具有小徑通孔的印刷配線板等的製造。The method for producing a printed wiring board according to the present embodiment can be applied not only to the manufacture of a single-layer printed wiring board, but also to the production of a multilayer printed wiring board, and also to a printed wiring board having a small-diameter through hole. Manufacturing.

本實施形態的印刷配線板的製造方法可適宜地用於高密度封裝基板的製造、特別是利用半加成法的配線板的製造。再者,將利用半加成法的配線板的製造步驟的一例示於圖2(a)~圖2(f)中。The method for producing a printed wiring board of the present embodiment can be suitably used for the production of a high-density package substrate, particularly a wiring board using a semi-additive method. In addition, an example of the manufacturing process of the wiring board by the semi-additive method is shown in FIG. 2 (a) - FIG. 2 (f).

圖2(a)中,準備於絕緣層50上形成有導體層40的基板(電路形成用基板)。導體層40例如為銅層。圖2(b)中,藉由所述感光層及中間層形成步驟,而於基板的導體層40上形成感光層30及中間層20。圖2(c)中,藉由所述曝光步驟,隔著中間層20朝感光層30上照射投影有光罩的圖像的光化射線80,而於感光層30上形成光硬化部。圖2(d)中,藉由顯影步驟,自基板上去除藉由所述曝光步驟所形成的光硬化部以外的區域(包含中間層),藉此於基板上形成作為光硬化部的抗蝕劑圖案32。圖2(e)中,藉由將作為光硬化部的抗蝕劑圖案32作為遮罩的鍍敷處理,於未由抗蝕劑包覆的基板的導體層40上形成鍍敷層60。圖2(f)中,利用強鹼的水溶液將作為光硬化部的抗蝕劑圖案32剝離後,藉由閃蝕(flash etching)處理,將由抗蝕劑圖案32遮蓋的導體層40去除,而形成包含蝕刻處理後的鍍敷層62及蝕刻處理後的導體層42的導體圖案70。導體層40與鍍敷層60的材質可相同,亦可不同。當導體層40與鍍敷層60為相同的材質時,導體層40與鍍敷層60可進行一體化。再者,圖2(a)~圖2(f)中對投影曝光方式進行了說明,但亦可併用遮罩曝光方式、直接刻寫曝光方式來形成抗蝕劑圖案32。In FIG. 2(a), a substrate (circuit formation substrate) on which the conductor layer 40 is formed on the insulating layer 50 is prepared. The conductor layer 40 is, for example, a copper layer. In FIG. 2(b), the photosensitive layer 30 and the intermediate layer 20 are formed on the conductor layer 40 of the substrate by the photosensitive layer and intermediate layer forming steps. In FIG. 2(c), by the exposure step, the actinic ray 80 on which the image of the reticle is projected is irradiated onto the photosensitive layer 30 via the intermediate layer 20, and a photocured portion is formed on the photosensitive layer 30. In FIG. 2(d), a region other than the photo-cured portion (including the intermediate layer) formed by the exposure step is removed from the substrate by a developing step, whereby a resist as a photo-curing portion is formed on the substrate. Agent pattern 32. In FIG. 2(e), the plating layer 60 is formed on the conductor layer 40 of the substrate not covered with the resist by a plating process using the resist pattern 32 as a photocured portion as a mask. In FIG. 2(f), the resist pattern 32 as the photocured portion is peeled off by an aqueous solution of a strong alkali, and then the conductor layer 40 covered by the resist pattern 32 is removed by flash etching. The conductor pattern 70 including the plating layer 62 after the etching treatment and the conductor layer 42 after the etching treatment is formed. The material of the conductor layer 40 and the plating layer 60 may be the same or different. When the conductor layer 40 and the plating layer 60 are made of the same material, the conductor layer 40 and the plating layer 60 can be integrated. Although the projection exposure method has been described with reference to FIGS. 2(a) to 2(f), the resist pattern 32 may be formed by a mask exposure method or a direct writing exposure method.

以上,對本揭示的適宜的實施形態進行了說明,但本揭示並不受所述實施形態任何限定。 [實施例]The preferred embodiments of the present disclosure have been described above, but the present disclosure is not limited to the above embodiments. [Examples]

以下,根據實施例來更具體地說明本揭示,但本揭示並不限定於以下的實施例。再者,只要事先無特別說明,則「份」及「%」為質量基準。Hereinafter, the present disclosure will be more specifically described based on examples, but the present disclosure is not limited to the following examples. In addition, "parts" and "%" are quality standards unless otherwise specified.

首先,根據合成例1來合成下述表2及表3中所示的黏合劑聚合物(A-1)。First, the binder polymer (A-1) shown in the following Table 2 and Table 3 was synthesized according to Synthesis Example 1.

<合成例1> 將作為聚合性單量體的甲基丙烯酸125 g、甲基丙烯酸甲酯25 g、甲基丙烯酸苄酯125 g及苯乙烯225 g與偶氮雙異丁腈1.5 g混合,而製備溶液a。<Synthesis Example 1> 125 g of methacrylic acid as a polymerizable monomer, 25 g of methyl methacrylate, 125 g of benzyl methacrylate, and 225 g of styrene and 1.5 g of azobisisobutyronitrile were mixed. Prepare solution a.

另外,使偶氮雙異丁腈1.2 g溶解於甲基賽路蘇60 g及甲苯40 g的混合液(質量比3:2)100 g中,而製備溶液b。Separately, 1.2 g of azobisisobutyronitrile was dissolved in 100 g of a mixture of methyl sesasil 60 g and 40 g of toluene (mass ratio: 3:2) to prepare a solution b.

另一方面,向具備攪拌機、回流冷卻器、溫度計、滴加漏斗及氮氣導入管的燒瓶中添加質量比為3:2的甲基賽路蘇及甲苯的混合液(以下,亦稱為「混合液x」)400 g,一面吹入氮氣一面進行攪拌,並加熱至80℃為止。On the other hand, a mixture of methyl sarbuta and toluene having a mass ratio of 3:2 is added to a flask equipped with a stirrer, a reflux condenser, a thermometer, a dropping funnel, and a nitrogen introduction tube (hereinafter, also referred to as "mixing" Liquid x") 400 g, stirred while blowing nitrogen gas, and heated to 80 °C.

歷時4小時並將滴加速度設為固定,來將所述溶液a滴加至燒瓶內的混合液x中後,於80℃下攪拌2小時。繼而,歷時10分鐘並將滴加速度設為固定,來將所述溶液b滴加至該燒瓶內的溶液中後,於80℃下對燒瓶內的溶液進行3小時攪拌。進而,歷時30分鐘將燒瓶內的溶液昇溫至90℃為止,於90℃下保溫2小時後,冷卻至室溫而獲得黏合劑聚合物(A-1)的溶液。該黏合劑聚合物(A-1)的溶液是以添加混合液x後不揮發成分(固體成分)變成50質量%的方式製備。The solution a was added dropwise to the mixed solution x in the flask over 4 hours and the dropping rate was fixed, and then stirred at 80 ° C for 2 hours. Then, the solution b was added dropwise to the solution in the flask over 10 minutes and the dropping rate was fixed, and the solution in the flask was stirred at 80 ° C for 3 hours. Further, the solution in the flask was heated to 90 ° C for 30 minutes, and the mixture was kept at 90 ° C for 2 hours, and then cooled to room temperature to obtain a solution of the binder polymer (A-1). The solution of the binder polymer (A-1) was prepared in such a manner that the non-volatile component (solid content) became 50% by mass after the addition of the mixed solution x.

黏合劑聚合物(A-1)的重量平均分子量為50,000,酸值為163 mgKOH/g。再者,酸值藉由中和滴定法來測定。具體而言,藉由如下方式來測定:向黏合劑聚合物的溶液1 g中添加丙酮30 g,進而使其均勻地溶解後,向所述黏合劑聚合物的溶液中添加適量的作為指示劑的酚酞,並使用0.1 N的KOH水溶液進行滴定。重量平均分子量藉由利用凝膠滲透層析法(GPC)進行測定,並使用標準聚苯乙烯的校準曲線進行換算來導出。以下表示GPC的條件。The binder polymer (A-1) had a weight average molecular weight of 50,000 and an acid value of 163 mgKOH/g. Further, the acid value was determined by a neutralization titration method. Specifically, it is measured by adding 30 g of acetone to 1 g of the solution of the binder polymer, and further uniformly dissolving the solution, and then adding an appropriate amount as an indicator to the solution of the binder polymer. The phenolphthalein was titrated using a 0.1 N aqueous KOH solution. The weight average molecular weight is determined by gel permeation chromatography (GPC) and converted using a calibration curve of standard polystyrene. The conditions for GPC are shown below.

-GPC條件- 泵:日立 L-6000型(日立製作所股份有限公司製造) 管柱:以下共計3根(管柱規格:10.7 mmφ×300 mm,均為日立化成股份有限公司製造) Gelpack GL-R420 Gelpack GL-R430 Gelpack GL-R440 溶離液:四氫呋喃 試樣濃度:選取固體成分為50質量%的黏合劑聚合物120 mg,並溶解於5 mL的四氫呋喃中來製備試樣。 測定溫度:25℃ 流量:2.05 mL/min 檢測器:日立L-3300型RI(日立製作所股份有限公司製造)-GPC condition - Pump: Hitachi L-6000 (manufactured by Hitachi, Ltd.) Pipe column: The following three total (column specifications: 10.7 mm φ × 300 mm, all manufactured by Hitachi Chemical Co., Ltd.) Gelpack GL-R420 Gelpack GL-R430 Gelpack GL-R440 Dissolution: tetrahydrofuran sample concentration: 120 mg of a binder polymer having a solid content of 50% by mass was prepared and dissolved in 5 mL of tetrahydrofuran to prepare a sample. Measurement temperature: 25 ° C Flow rate: 2.05 mL / min Detector: Hitachi L-3300 type RI (manufactured by Hitachi, Ltd.)

<中間層形成用樹脂組成物的製備> 其次,將下述表1及表2中所示的各成分以該表中所示的量(單位:質量份)混合,藉此獲得中間層形成用樹脂組成物1及中間層形成用樹脂組成物2。再者,表1及表2中的溶劑及有機溶劑以外的調配量均為以固體成分計的調配量。<Preparation of Resin Composition for Intermediate Layer Formation> Next, each component shown in Tables 1 and 2 below was mixed in an amount (unit: parts by mass) shown in the table to obtain an intermediate layer. Resin composition 1 and resin composition 2 for intermediate layer formation. In addition, the preparation amount other than the solvent and the organic solvent in Table 1 and Table 2 is the compounding quantity of solid content.

[表1] [Table 1]

[表2] [Table 2]

<感光性樹脂組成物的製備> 繼而,將下述表3中所示的各成分以該表中所示的量(單位:質量份)混合,藉此獲得感光性樹脂組成物。再者,表3中的有機溶劑以外的調配量均為以固體成分計的調配量。<Preparation of Photosensitive Resin Composition> Then, each component shown in the following Table 3 was mixed in the amounts (unit: parts by mass) shown in the table, whereby a photosensitive resin composition was obtained. In addition, the compounding amount other than the organic solvent in Table 3 is the compounding quantity based on solid content.

[表3] [table 3]

表1~表3中的各成分的詳細情況如下所示。 ﹡1:聚乙烯醇 PVA-205(可樂麗(Kuraray)股份有限公司製造,皂化度=80莫耳%) ﹡2:聚乙烯吡咯啶酮 K-30(日本觸媒股份有限公司製造) ﹡3:珀利弗洛(Polyflow)KL-401(共榮社化學股份有限公司製造)The details of each component in Tables 1 to 3 are as follows. *1: Polyvinyl alcohol PVA-205 (manufactured by Kuraray Co., Ltd., saponification degree = 80 mol%) *2: polyvinylpyrrolidone K-30 (manufactured by Nippon Shokubai Co., Ltd.) *3 : Polyflow KL-401 (manufactured by Kyoeisha Chemical Co., Ltd.)

(A)成分:黏合劑聚合物 ﹡4:(A-1)(合成例1中所獲得的黏合劑聚合物(A-1)) 甲基丙烯酸/甲基丙烯酸甲酯/甲基丙烯酸苄酯/苯乙烯=25/5/25/45(質量比),重量平均分子量=50,000,固體成分=50質量%,甲基賽路蘇/甲苯=3/2(質量比)溶液(A) component: binder polymer *4: (A-1) (adhesive polymer (A-1) obtained in Synthesis Example 1) methacrylic acid / methyl methacrylate / benzyl methacrylate /styrene = 25/5/25/45 (mass ratio), weight average molecular weight = 50,000, solid content = 50% by mass, methyl sarxinsu / toluene = 3 / 2 (mass ratio) solution

(B)成分:具有乙烯性不飽和鍵的光聚合性化合物 ﹡5:FA-321M(日立化成股份有限公司製造) 2,2-雙(4-(甲基丙烯醯氧基五乙氧基)苯基)丙烷 ﹡6:FA-024M(日立化成股份有限公司製造) EOPO改性二甲基丙烯酸酯 ﹡7:BP-2EM(共榮社化學股份有限公司製造) 2,2-雙(4-(甲基丙烯醯氧基聚乙氧基)苯基)丙烷 ﹡8:BPE-80N(新中村化學工業股份有限公司製造) 2,2-雙(4-(甲基丙烯醯氧基聚乙氧基)苯基)丙烷 ﹡9:DPEA-12(日本化藥股份有限公司製造) 環氧乙烷改性二季戊四醇六丙烯酸酯(B) component: Photopolymerizable compound having an ethylenically unsaturated bond *5: FA-321M (manufactured by Hitachi Chemical Co., Ltd.) 2,2-bis(4-(methacryloxy)pentaethoxy) Phenyl)propane*6:FA-024M (manufactured by Hitachi Chemical Co., Ltd.) EOPO modified dimethacrylate*7:BP-2EM (manufactured by Kyoeisha Chemical Co., Ltd.) 2,2-double (4- (Methethyloxypolyethoxy)phenyl)propane*8:BPE-80N (manufactured by Shin-Nakamura Chemical Co., Ltd.) 2,2-bis(4-(methacryloxy)polyethoxylate Phenyl)propane*9:DPEA-12 (manufactured by Nippon Kayaku Co., Ltd.) Ethylene oxide modified dipentaerythritol hexaacrylate

(C)成分:光聚合起始劑 ﹡10:B-CIM(保土谷化學工業股份有限公司製造) 2,2'-雙(2-氯苯基)-4,4',5,5'-四苯基聯咪唑(C) Component: Photopolymerization initiator *10: B-CIM (manufactured by Hodogaya Chemical Industry Co., Ltd.) 2,2'-bis(2-chlorophenyl)-4,4',5,5'- Tetraphenylbiimidazole

(D)成分:光增感劑 ﹡11:EAB(保土谷化學工業股份有限公司製造) 4,4'-雙(二乙基胺基)二苯甲酮(D) Component: Photosensitizer *11: EAB (manufactured by Hodogaya Chemical Industry Co., Ltd.) 4,4'-bis(diethylamino)benzophenone

(E)成分:聚合抑制劑 ﹡12:TBC(迪愛生(Dainippon Ink and Chemicals,DIC)股份有限公司製造) 4-第三丁基兒茶酚(E) component: polymerization inhibitor *12: TBC (manufactured by Dainippon Ink and Chemicals, Inc.) 4-t-butylcatechol

[實施例1~實施例14及比較例1~比較例4] <感光性元件的製作> 作為感光性元件的支撐膜,準備下述表4~表6中所示的PET膜。將測定各PET膜中所含有的直徑為5 μm以上的粒子的數量的結果示於下述表4~表6中。另外,PET膜均為透明。[Examples 1 to 14 and Comparative Examples 1 to 4] <Preparation of photosensitive element> As the support film of the photosensitive element, PET films shown in the following Tables 4 to 6 were prepared. The results of measuring the number of particles having a diameter of 5 μm or more contained in each PET film are shown in Tables 4 to 6 below. In addition, the PET film is transparent.

所述直徑為5 μm以上的粒子的數量藉由利用偏光顯微鏡分別觀察支撐膜的兩面,並分別測定直徑為5 μm以上的粒子的數量,且對該些數量進行累計來求出。再者,於該觀察中,使焦點對準表面而對支撐膜的一個面與另一個面分別進行觀察。另外,將支撐膜的測定區域(1 mm見方的大小)數n設為10,並求出其平均值。The number of particles having a diameter of 5 μm or more was obtained by observing both surfaces of the support film by a polarizing microscope, and measuring the number of particles having a diameter of 5 μm or more, respectively, and accumulating the numbers. Further, in this observation, the focus was aligned on the surface to observe one surface and the other surface of the support film, respectively. Further, the number n of measurement regions (sizes of 1 mm square) of the support film was set to 10, and the average value thereof was determined.

(中間層的製作) 當於PET膜的兩面中粒子(潤滑劑)的密度不同時,使用中間層形成用樹脂組成物1或中間層形成用樹脂組成物2於PET膜的潤滑劑少的面上形成中間層1或中間層2。(Production of the intermediate layer) When the density of the particles (lubricant) is different on both surfaces of the PET film, the resin composition for forming the intermediate layer 1 or the resin composition 2 for forming the intermediate layer is less than the lubricant of the PET film. The intermediate layer 1 or the intermediate layer 2 is formed thereon.

當使用中間層形成用樹脂組成物1來形成中間層1時,將水以外的中間層形成用樹脂組成物1的各成分緩慢地添加至室溫的水中,全部添加後,加熱至90℃。到達90℃後,攪拌1小時,然後冷卻至室溫。繼而,以厚度變得均勻的方式,將中間層形成用樹脂組成物1塗佈於PET膜(支撐膜)上,並利用95℃的熱風對流式乾燥機乾燥10分鐘,而形成乾燥後的厚度為5 μm的中間層1。When the intermediate layer 1 is formed by using the resin composition 1 for forming an intermediate layer, each component of the resin composition for intermediate layer formation other than water is gradually added to water at room temperature, and after all the addition, the mixture is heated to 90 °C. After reaching 90 ° C, it was stirred for 1 hour and then cooled to room temperature. Then, the intermediate layer-forming resin composition 1 was applied onto a PET film (support film) so as to have a uniform thickness, and dried by a hot air convection dryer at 95 ° C for 10 minutes to form a dried thickness. It is an intermediate layer 1 of 5 μm.

當使用中間層形成用樹脂組成物2來形成中間層2時,以厚度變得均勻的方式,將中間層形成用樹脂組成物2(丙烯酸樹脂組成物)塗佈於支撐膜上,並利用100℃的熱風對流式乾燥機乾燥10分鐘,而形成乾燥後的厚度為5 μm的中間層2。When the intermediate layer 2 is formed by using the resin composition 2 for forming an intermediate layer, the resin composition 2 for an intermediate layer formation (acrylic resin composition) is applied onto the support film so that the thickness becomes uniform, and 100 is used. The hot air convection dryer at °C was dried for 10 minutes to form an intermediate layer 2 having a thickness of 5 μm after drying.

(感光層的製作) 其次,以厚度變得均勻的方式,將感光性樹脂組成物塗佈於支撐膜的中間層上,並利用100℃的熱風對流式乾燥機乾燥10分鐘,而形成乾燥後的厚度為10 μm的感光層。以下,將使用感光性樹脂組成物1所形成的感光層亦稱為感光層1,將使用感光性樹脂組成物2所形成的感光層亦稱為感光層2。(Production of Photosensitive Layer) Next, the photosensitive resin composition was applied to the intermediate layer of the support film so that the thickness became uniform, and dried by a hot air convection dryer at 100 ° C for 10 minutes to form a dried film. A photosensitive layer having a thickness of 10 μm. Hereinafter, the photosensitive layer formed using the photosensitive resin composition 1 is also referred to as a photosensitive layer 1, and the photosensitive layer formed using the photosensitive resin composition 2 is also referred to as a photosensitive layer 2.

繼而,將聚乙烯膜(保護層)(塔瑪波利(Tamapoly)股份有限公司製造,「NF-15」)貼合於該感光層上,而獲得依序積層有PET膜(支撐膜)、中間層、感光層、及保護層的感光性元件。再者,於下述表4中的實施例1的情況下,表示使用中間層形成用樹脂組成物1於QS63(支撐膜)上形成中間層1,繼而使用感光性樹脂組成物1於中間層1上形成感光層1。Then, a polyethylene film (protective layer) (manufactured by Tamapoly Co., Ltd., "NF-15") was attached to the photosensitive layer, and a PET film (support film) was sequentially laminated. Photosensitive elements of the intermediate layer, the photosensitive layer, and the protective layer. Further, in the case of Example 1 in the following Table 4, it is shown that the intermediate layer 1 is formed on the QS63 (support film) using the resin composition for forming an intermediate layer, and then the photosensitive resin composition 1 is used in the intermediate layer. The photosensitive layer 1 is formed on 1.

<積層體的製作> 對作為於兩面上積層有厚度為12 μm的銅箔的環氧玻璃材的覆銅積層板(基板,日立化成股份有限公司製造,「MCL-E-67」)的銅表面進行酸處理並進行水洗後,利用氣流進行乾燥。將覆銅積層板增溫至80℃,一面剝離保護層,一面以感光層接觸銅表面的方式將所述感光性元件分別壓接於覆銅積層板上。壓接是使用110℃的熱輥,於0.40 MPa的壓力下以1.0 m/min的輥速來進行。如此,獲得依序積層有基板、感光層、中間層及支撐膜的積層體。將該些積層體用作以下所示的試驗中的試驗片。作為層壓機,使用HLM-3000(大成層壓機(Taisei-laminator)股份有限公司製造)。<Preparation of a laminated body> Copper-clad laminate (a substrate, manufactured by Hitachi Chemical Co., Ltd., "MCL-E-67"), which is an epoxy glass material having a copper foil having a thickness of 12 μm laminated on both sides The surface was subjected to an acid treatment and washed with water, and then dried by a gas stream. The copper clad laminate was heated to 80 ° C, and the protective layer was peeled off, and the photosensitive members were respectively pressure-bonded to the copper clad laminate so that the photosensitive layer contacted the copper surface. The crimping was carried out using a hot roll at 110 ° C at a roll speed of 1.0 m/min under a pressure of 0.40 MPa. In this manner, a laminate in which a substrate, a photosensitive layer, an intermediate layer, and a support film are laminated in this order is obtained. These laminates were used as test pieces in the test shown below. As a laminating machine, HLM-3000 (manufactured by Taisei-laminator Co., Ltd.) was used.

<積層體的評價> 自所述積層體上剝離支撐膜,使用掃描型電子顯微鏡SU-1500(日立製作所股份有限公司製造)對中間層的與感光層側為相反側的面中的直徑為3 μm以上的凹部(以下,亦稱為「中間層凹部」)進行觀察。將中間層的測定區域(1 mm見方的大小)數n設為10,求出其平均值,並藉由以下的基準來進行評價。將結果示於下述表4~表6中。 A:直徑為3 μm以上的凹部的數量未滿5個。 B:直徑為3 μm以上的凹部的數量為5個以上、30個以下。 C:直徑為3 μm以上的凹部的數量超過30個。<Evaluation of the laminated body> The support film was peeled off from the laminated body, and the diameter of the surface of the intermediate layer opposite to the photosensitive layer side was 3 using a scanning electron microscope SU-1500 (manufactured by Hitachi, Ltd.). A concave portion (hereinafter also referred to as "intermediate layer concave portion") of μm or more is observed. The number n of measurement areas (sizes of 1 mm square) of the intermediate layer was set to 10, and the average value thereof was determined and evaluated by the following criteria. The results are shown in Tables 4 to 6 below. A: The number of the recesses having a diameter of 3 μm or more is less than five. B: The number of the concave portions having a diameter of 3 μm or more is 5 or more and 30 or less. C: The number of the recesses having a diameter of 3 μm or more exceeds 30.

<光感度測定試驗> 自試驗片上剝離支撐膜,將日立41段梯形板(step tablet)載置於試驗片的中間層上,使用具有波長365 nm的高壓水銀燈的投影曝光機(牛尾(Ushio)電機股份有限公司製造,「UX-2240SM-XJ01」,NA:0.063),為了調整照射量來求出顯影後的抗蝕劑圖案的階段數(抗蝕劑硬化段數)變成7段的規定的照射能量(曝光量),隔著中間層對感光層進行曝光。<Photosensitivity measurement test> The support film was peeled off from the test piece, and a Hitachi 41-step ladder plate was placed on the intermediate layer of the test piece, and a projection exposure machine (Ushio) having a high-pressure mercury lamp having a wavelength of 365 nm was used. Manufactured by the Electric Co., Ltd., "UX-2240SM-XJ01", NA: 0.063), in order to adjust the amount of irradiation, the number of stages of the resist pattern after development (the number of resist hardened sections) is determined to be seven stages. Irradiation energy (exposure amount), the photosensitive layer was exposed through the intermediate layer.

繼而,使用30℃的1質量%碳酸鈉水溶液,以最短顯影時間的2倍的時間對感光層進行噴霧顯影,並將未曝光部去除。此處,於中間層為水溶性的情況(中間層1的情況)下,進行水洗後對感光層進行顯影。另外,於中間層具有對於顯影液的溶解性的情況(中間層2的情況)下,藉由顯影而將未曝光部與中間層一同去除。再者,最短顯影時間藉由測定未曝光部經由所述顯影處理完全地去除的時間來求出。Then, using a 1% by mass aqueous sodium carbonate solution at 30 ° C, the photosensitive layer was spray-developed at twice the minimum development time, and the unexposed portion was removed. Here, in the case where the intermediate layer is water-soluble (in the case of the intermediate layer 1), the photosensitive layer is developed after washing with water. Further, in the case where the intermediate layer has solubility in the developing solution (in the case of the intermediate layer 2), the unexposed portion is removed together with the intermediate layer by development. Further, the shortest development time is obtained by measuring the time during which the unexposed portion is completely removed by the development processing.

其後,測定各曝光量下的形成於基板上的抗蝕劑圖案(光硬化部)的階段數。繼而,製作曝光量與階段數的校準曲線,求出階段數變成7段的曝光量(單位:mJ/cm2 ),並作為感光性樹脂組成物的光感度。將結果示於下述表4~表6中。該曝光量的值越少,表示光感度越良好。Thereafter, the number of stages of the resist pattern (photohardenable portion) formed on the substrate at each exposure amount was measured. Then, a calibration curve of the exposure amount and the number of stages was prepared, and the exposure amount (unit: mJ/cm 2 ) in which the number of stages was changed to seven stages was determined, and the light sensitivity of the photosensitive resin composition was obtained. The results are shown in Tables 4 to 6 below. The smaller the value of the exposure amount, the better the light sensitivity.

<解析度測定試驗> 自試驗片上剝離支撐膜,將具有作為解析度評價用圖案的線寬/空間寬度為z/z(z=2~20(以1 μm間隔來變化))(單位:μm)的配線圖案的玻璃遮罩置於試驗片的中間層上,使用具有波長365 nm的高壓水銀燈的投影曝光機(優志旺電機股份有限公司製造,「UX-2240SM-XJ01」),以日立41段梯形板的顯影後的殘存階段數變成7段的照射能量,隔著中間層對感光層進行曝光。曝光後,進行與所述光感度測定試驗相同的顯影處理。顯影處理後,使用光學顯微鏡觀察抗蝕劑圖案。將藉由顯影處理而完全地去除未曝光部的線部分(曝光部)間的空間寬度中的最小值(單位:μm)設為解析度評價的指標。再者,該數值越小,表示解析度越良好。將結果示於下述表4~表6中。<Measurement measurement test> The support film was peeled off from the test piece, and the line width/space width of the pattern for evaluation of the resolution was z/z (z = 2 to 20 (changed at intervals of 1 μm)) (unit: μm) The glass mask of the wiring pattern is placed on the intermediate layer of the test piece, and a projection exposure machine ("UX-2240SM-XJ01" manufactured by Uchihiro Electric Co., Ltd.) having a high-pressure mercury lamp having a wavelength of 365 nm is used, and Hitachi 41 is used. The number of remaining stages after development of the stepped trapezoidal plate becomes 7-stage irradiation energy, and the photosensitive layer is exposed through the intermediate layer. After the exposure, the same development processing as the photo-sensitivity measurement test was performed. After the development treatment, the resist pattern was observed using an optical microscope. The minimum value (unit: μm) of the spatial width between the line portions (exposure portions) in which the unexposed portions are completely removed by the development process is used as an index for the evaluation of the resolution. Furthermore, the smaller the value, the better the resolution. The results are shown in Tables 4 to 6 below.

<抗蝕劑圖案中的脫落產生的評價> 使用掃描型電子顯微鏡SU-1500(日立製作所股份有限公司製造),對所述解析度測定試驗中所獲得的抗蝕劑圖案之中,線寬為10 μm(與線寬正交的長度為1 mm)的抗蝕劑圖案15條進行觀察,並藉由以下的基準來進行評價。將結果示於下述表4~表6中。再者,將實施例3中所獲得的抗蝕劑圖案的SEM照片示於圖3中,將比較例1中所獲得的抗蝕劑圖案的SEM照片示於圖4中。 A:於所形成的抗蝕劑圖案中直徑為3 μm以上的微小的脫落未滿5個。 B:於所形成的抗蝕劑圖案中直徑為3 μm以上的微小的脫落為5個以上、未滿20個。 C:於所形成的抗蝕劑圖案中直徑為3 μm以上的微小的脫落為20個以上。<Evaluation of the occurrence of the detachment in the resist pattern> Using the scanning electron microscope SU-1500 (manufactured by Hitachi, Ltd.), the line width of the resist pattern obtained in the resolution measurement test was 15 strips of a resist pattern of 10 μm (the length orthogonal to the line width was 1 mm) were observed and evaluated by the following criteria. The results are shown in Tables 4 to 6 below. In addition, the SEM photograph of the resist pattern obtained in Example 3 is shown in FIG. 3, and the SEM photograph of the resist pattern obtained in Comparative Example 1 is shown in FIG. A: Less than 5 minute peelings having a diameter of 3 μm or more in the formed resist pattern. B: In the formed resist pattern, the fine peeling having a diameter of 3 μm or more is 5 or more and less than 20. C: 20 or more fine peelings having a diameter of 3 μm or more in the formed resist pattern.

[表4] [Table 4]

[表5] [table 5]

[表6] [Table 6]

表4~表6中的支撐膜的詳細情況如下所示。 QS63:於一面上具有潤滑劑層,於另一面上雖具有潤滑劑層,但所含有的潤滑劑的數量極少的三層結構的雙軸配向PET膜(東麗股份有限公司製造,與中間層接觸的面中的直徑為5 μm以上的粒子的數量(以下,簡稱為「中間層面的粒子數量」):1個/mm2 以下,與中間層接觸的面上的表面粗糙度Rz:66 nm) A1517:於一面上具有潤滑劑層的二層結構的雙軸配向PET膜(東洋紡股份有限公司製造,中間層面的粒子數:10個/mm2 以下,與中間層接觸的面上的表面粗糙度Rz:35 nm) A4100:於一面上具有潤滑劑層的二層結構的雙軸配向PET膜(東洋紡股份有限公司製造,中間層面的粒子數:10個/mm2 以下,與中間層接觸的面上的表面粗糙度Rz:35 nm) G2H:含有潤滑劑的單層結構(潤滑劑捏合型)的雙軸配向PET膜(帝人杜邦薄膜股份有限公司製造,中間層面的粒子數:超過10個/mm2 ;與中間層接觸的面上的表面粗糙度Rz:920 nm) HPE:於表背面上具有潤滑劑層的三層結構的雙軸配向PET膜(帝人杜邦薄膜股份有限公司製造,中間層面的粒子數:超過10個/mm2 ;與中間層接觸的面上的表面粗糙度Rz:700 nm) KFX:於一面上具有潤滑劑層的二層結構的雙軸配向PET膜(帝人杜邦薄膜股份有限公司製造,中間層面的粒子數:10個/mm2 以下,與中間層接觸的面上的表面粗糙度Rz:50 nm)The details of the support film in Tables 4 to 6 are as follows. QS63: a biaxially oriented PET film having a lubricant layer on one side and a lubricant layer on the other side, but containing a very small amount of lubricant (Toray Co., Ltd., and intermediate layer) The number of particles having a diameter of 5 μm or more in the contact surface (hereinafter, simply referred to as "the number of particles in the intermediate layer"): 1 / mm 2 or less, surface roughness on the surface in contact with the intermediate layer Rz: 66 nm A1517: Biaxially oriented PET film having a two-layer structure with a lubricant layer on one side (manufactured by Toyobo Co., Ltd., the number of particles in the intermediate layer: 10/mm 2 or less, the surface on the surface in contact with the intermediate layer is rough) Degree Rz: 35 nm) A4100: Biaxially oriented PET film having a two-layer structure with a lubricant layer on one side (manufactured by Toyobo Co., Ltd., the number of particles in the intermediate layer: 10/mm 2 or less, in contact with the intermediate layer) Surface roughness Rz: 35 nm) G2H: Biaxially oriented PET film with a single layer structure (lubricant kneading type) containing lubricant (manufactured by Teijin DuPont Film Co., Ltd., number of particles in the middle layer: more than 10 /m m 2 ; surface roughness on the surface in contact with the intermediate layer Rz: 920 nm) HPE: a three-layered biaxially oriented PET film having a lubricant layer on the back side of the watch (manufactured by Teijin DuPont Film Co., Ltd., intermediate layer) Number of particles: more than 10 / mm 2 ; surface roughness Rz: 700 nm on the surface in contact with the intermediate layer KFX: biaxially oriented PET film with a lubricant layer on one side (Dynasty DuPont film) Manufactured by the company, the number of particles in the middle layer: 10 / mm 2 or less, surface roughness Rz: 50 nm on the surface in contact with the intermediate layer)

可確認當使用高解析度的投影曝光機,於殘存階段數變成7段的能量少的條件下進行曝光時,實施例1~實施例14中,於抗蝕劑圖案中微小的脫落少,相對於此,比較例1~比較例4中,於抗蝕劑圖案中產生許多微小的脫落。In the case of using a high-resolution projection exposure machine, when the exposure was performed under the condition that the number of remaining phases became seven, the amount of light in the resist pattern was small, and the thickness of the resist pattern was small. Here, in Comparative Examples 1 to 4, a lot of minute peeling occurred in the resist pattern.

再者,當使用投影曝光機,於殘存階段數變成11段的條件下進行曝光時,與所述評價(於殘存階段數變成7段的條件下進行曝光時)相比,抗蝕劑圖案中的微小的脫落的產生數變少。另外,當利用遮罩曝光方式或LDI曝光方式來代替投影曝光方式,於殘存階段數變成7段的條件下進行曝光時,與所述評價相比,抗蝕劑圖案中的微小的脫落的產生數亦少。 [產業上之可利用性]In addition, when exposure is performed under the condition that the number of remaining stages becomes 11 stages using a projection exposure machine, the resist pattern is compared with the evaluation (when exposure is performed under the condition that the number of remaining stages becomes 7 stages). The number of tiny sheddings is reduced. In addition, when the exposure exposure method or the LDI exposure method is used instead of the projection exposure method, when the exposure is performed under the condition that the number of remaining stages becomes seven, the occurrence of minute peeling in the resist pattern is compared with the evaluation. The number is also small. [Industrial availability]

根據本揭示,可提供一種可形成微小的脫落少的抗蝕劑圖案的感光性元件、積層體、抗蝕劑圖案的形成方法及印刷配線板的製造方法。According to the present disclosure, it is possible to provide a photosensitive element, a laminate, a method of forming a resist pattern, and a method of producing a printed wiring board, which are capable of forming a resist pattern having a small amount of detachment.

1‧‧‧感光性元件
2‧‧‧支撐膜
3、20‧‧‧中間層
4、30‧‧‧感光層
5‧‧‧保護層
32‧‧‧抗蝕劑圖案
40‧‧‧導體層
42‧‧‧蝕刻處理後的導體層
50‧‧‧絕緣層
60‧‧‧鍍敷層
62‧‧‧蝕刻處理後的鍍敷層
70‧‧‧導體圖案
80‧‧‧光化射線
1‧‧‧Photosensitive components
2‧‧‧Support film
3, 20‧‧‧ middle layer
4, 30‧‧‧Photosensitive layer
5‧‧‧Protective layer
32‧‧‧resist pattern
40‧‧‧Conductor layer
42‧‧‧The etched conductor layer
50‧‧‧Insulation
60‧‧‧ plating layer
62‧‧‧etched plating layer
70‧‧‧ conductor pattern
80‧‧‧Acradiation rays

圖1是表示本揭示的感光性元件的一實施形態的示意剖面圖。 圖2(a)~圖2(f)是示意性地表示利用半加成法的印刷配線板的製造步驟的一例的圖。 圖3是實施例3中所獲得的抗蝕劑圖案的掃描型電子顯微鏡(Scanning Electron Microscope,SEM)照片。 圖4是比較例1中所獲得的抗蝕劑圖案的SEM照片。Fig. 1 is a schematic cross-sectional view showing an embodiment of a photosensitive element of the present disclosure. 2(a) to 2(f) are diagrams schematically showing an example of a manufacturing procedure of a printed wiring board by a semi-additive method. 3 is a scanning electron microscope (SEM) photograph of a resist pattern obtained in Example 3. FIG. 4 is a SEM photograph of a resist pattern obtained in Comparative Example 1.

1‧‧‧感光性元件 1‧‧‧Photosensitive components

2‧‧‧支撐膜 2‧‧‧Support film

3‧‧‧中間層 3‧‧‧Intermediate

4‧‧‧感光層 4‧‧‧Photosensitive layer

5‧‧‧保護層 5‧‧‧Protective layer

Claims (9)

一種感光性元件,其依序包括支撐膜、中間層及感光層,所述支撐膜的厚度為20 μm以上,所述支撐膜中所含有的直徑為5 μm以上的粒子的數量為30個/mm2 以下。A photosensitive element comprising, in order, a support film, an intermediate layer and a photosensitive layer, wherein the thickness of the support film is 20 μm or more, and the number of particles having a diameter of 5 μm or more contained in the support film is 30/ Below mm 2 . 如申請專利範圍第1項所述的感光性元件,其中所述支撐膜的與所述中間層接觸的面中的直徑為5 μm以上的粒子的數量為10個/mm2 以下。The photosensitive element according to claim 1, wherein the number of particles having a diameter of 5 μm or more in the surface of the support film in contact with the intermediate layer is 10 pieces/mm 2 or less. 如申請專利範圍第1項或第2項所述的感光性元件,其中所述中間層包含聚乙烯醇。The photosensitive member according to claim 1 or 2, wherein the intermediate layer comprises polyvinyl alcohol. 如申請專利範圍第1項至第3項中任一項所述的感光性元件,其中所述支撐膜為聚酯膜。The photosensitive element according to any one of claims 1 to 3, wherein the support film is a polyester film. 一種抗蝕劑圖案的形成方法,其包括: 使用如申請專利範圍第1項至第4項中任一項所述的感光性元件,將所述感光層與所述中間層及所述支撐膜以此順序配置於基板上的步驟; 將所述支撐膜去除,利用光化射線隔著所述中間層對所述感光層進行曝光的步驟;以及 自所述基板上去除所述感光層的未硬化部及所述中間層的步驟。A method of forming a resist pattern, comprising: using the photosensitive element according to any one of claims 1 to 4, the photosensitive layer and the intermediate layer and the support film a step of disposing on the substrate in this order; removing the support film, exposing the photosensitive layer through the intermediate layer by actinic rays; and removing the photosensitive layer from the substrate The step of hardening the portion and the intermediate layer. 如申請專利範圍第5項所述的抗蝕劑圖案的形成方法,其中使用透鏡的數值孔徑為0.05以上的高解析度曝光機進行所述曝光。The method of forming a resist pattern according to claim 5, wherein the exposure is performed using a high-resolution exposure machine having a lens having a numerical aperture of 0.05 or more. 一種積層體,其依序包括基板、感光層及中間層,且在所述中間層的與所述感光層側為相反側的面中,直徑為3 μm以上的凹部的數量為30個/mm2 以下。A laminated body comprising a substrate, a photosensitive layer and an intermediate layer in this order, and in the surface of the intermediate layer opposite to the side of the photosensitive layer, the number of the recesses having a diameter of 3 μm or more is 30/mm 2 or less. 一種抗蝕劑圖案的形成方法,其包括: 利用光化射線,隔著如申請專利範圍第7項所述的積層體中的所述中間層對所述感光層進行曝光的步驟;以及 自所述基板上去除所述感光層的未硬化部及所述中間層的步驟。A method for forming a resist pattern, comprising: a step of exposing the photosensitive layer by using the intermediate layer in the laminate according to claim 7 of the invention; and using the actinic ray; The step of removing the uncured portion of the photosensitive layer and the intermediate layer on the substrate. 一種印刷配線板的製造方法,其包括:對藉由如申請專利範圍第5項、第6項或第8項所述的抗蝕劑圖案的形成方法而形成有抗蝕劑圖案的基板進行蝕刻處理或鍍敷處理,而形成導體圖案的步驟。A method of manufacturing a printed wiring board, comprising: etching a substrate on which a resist pattern is formed by a method of forming a resist pattern according to claim 5, 6, or 8 of claim 5 Processing or plating treatment to form a conductor pattern.
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