TW201705581A - 配合ｏｌｅｄ運作之層狀結構及製造該結構之方法 - Google Patents

配合ｏｌｅｄ運作之層狀結構及製造該結構之方法 Download PDF

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Publication number
TW201705581A
TW201705581A TW105109756A TW105109756A TW201705581A TW 201705581 A TW201705581 A TW 201705581A TW 105109756 A TW105109756 A TW 105109756A TW 105109756 A TW105109756 A TW 105109756A TW 201705581 A TW201705581 A TW 201705581A
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TW
Taiwan
Prior art keywords
layer
ald
iel
layered structure
oxide
Prior art date
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TW105109756A
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English (en)
Chinese (zh)
Inventor
李榮盛
西門 拉摩
韓鎮宇
Original Assignee
法國聖戈本玻璃公司
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Application filed by 法國聖戈本玻璃公司 filed Critical 法國聖戈本玻璃公司
Publication of TW201705581A publication Critical patent/TW201705581A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Laminated Bodies (AREA)
  • Surface Treatment Of Glass (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
TW105109756A 2015-04-16 2016-03-28 配合ｏｌｅｄ運作之層狀結構及製造該結構之方法 TW201705581A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP15163911.9A EP3082172A1 (en) 2015-04-16 2015-04-16 Layered structure for an oled and a method for producing such a structure

Publications (1)

Publication Number Publication Date
TW201705581A true TW201705581A (zh) 2017-02-01

Family

ID=52946413

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105109756A TW201705581A (zh) 2015-04-16 2016-03-28 配合ｏｌｅｄ運作之層狀結構及製造該結構之方法

Country Status (8)

Country Link
US (1) US10367142B2 (https=)
EP (1) EP3082172A1 (https=)
JP (1) JP2018516431A (https=)
KR (1) KR20170137087A (https=)
CN (1) CN107431144B (https=)
RU (1) RU2017134935A (https=)
TW (1) TW201705581A (https=)
WO (1) WO2016165921A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3028999B1 (en) * 2014-12-01 2017-05-24 Saint-Gobain Glass France Transparent diffusive oled substrate and method for producing such a substrate
CN110429161B (zh) * 2018-08-07 2021-04-20 广东聚华印刷显示技术有限公司 光学增透结构及底发射型电致发光器件和制备方法
CN109148694A (zh) * 2018-08-27 2019-01-04 领旺（上海）光伏科技有限公司 用于柔性钙钛矿太阳能电池的ito电极表面修饰方法
CN111384271B (zh) * 2018-12-29 2021-05-28 Tcl科技集团股份有限公司 量子点发光二极管及其制备方法
CN110747449B (zh) * 2019-11-19 2021-01-05 哈尔滨工业大学 一种用于电子屏幕的自洁疏水膜层的制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE655526A (fr) 1964-11-10 1965-05-10 Acec Poêle à accumulation
JP4363365B2 (ja) * 2004-07-20 2009-11-11 株式会社デンソー カラー有機ｅｌディスプレイおよびその製造方法
US7335980B2 (en) * 2004-11-04 2008-02-26 International Business Machines Corporation Hardmask for reliability of silicon based dielectrics
KR101548025B1 (ko) 2007-07-27 2015-08-27 아사히 가라스 가부시키가이샤 투광성 기판, 그의 제조 방법, 유기 ｌｅｄ 소자 및 그의 제조 방법
FR2955575B1 (fr) * 2010-01-22 2012-02-24 Saint Gobain Substrat verrier revetu d'une couche haut indice sous un revetement electrode et dispositif electroluminescent organique comportant un tel substrat.
FR2958795B1 (fr) * 2010-04-12 2012-06-15 Commissariat Energie Atomique Dispositif optoelectronique organique et son procede d'encapsulation.
WO2012093467A1 (ja) * 2011-01-06 2012-07-12 シャープ株式会社 有機ｅｌ表示装置およびその製造方法
KR101825053B1 (ko) * 2011-01-11 2018-02-05 삼성디스플레이 주식회사 유기발광표시장치의 제조방법
JP5684370B2 (ja) * 2011-03-29 2015-03-11 Ｎｅｃライティング株式会社 有機ｅｌ発光装置、有機ｅｌ発光装置の製造方法及び有機ｅｌ照明装置
KR101715112B1 (ko) 2012-06-14 2017-03-10 쌩-고벵 글래스 프랑스 Ｏｌｅｄ 소자용 적층체, 그 제조방법 및 이를 구비한 ｏｌｅｄ 소자
FR2993707B1 (fr) 2012-07-17 2015-03-13 Saint Gobain Electrode supportee transparente pour oled
EP2712851B1 (en) 2012-09-28 2015-09-09 Saint-Gobain Glass France Method of producing a transparent diffusive oled substrate
WO2014092041A1 (ja) * 2012-12-13 2014-06-19 コニカミノルタ株式会社 有機エレクトロルミネッセンスデバイスの製造方法
FR3020179B1 (fr) 2014-04-22 2017-10-06 Saint Gobain Electrode supportee transparente pour oled

Also Published As

Publication number Publication date
CN107431144B (zh) 2019-10-01
RU2017134935A3 (https=) 2019-07-26
EP3082172A1 (en) 2016-10-19
US20180114910A1 (en) 2018-04-26
WO2016165921A1 (en) 2016-10-20
JP2018516431A (ja) 2018-06-21
CN107431144A (zh) 2017-12-01
KR20170137087A (ko) 2017-12-12
RU2017134935A (ru) 2019-04-05
US10367142B2 (en) 2019-07-30

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