TW201704737A - Mura quantifying system by laser crystallization facility using UV and Mura quantifying method by laser crystallization facility using UV - Google Patents

Mura quantifying system by laser crystallization facility using UV and Mura quantifying method by laser crystallization facility using UV Download PDF

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TW201704737A
TW201704737A TW105115035A TW105115035A TW201704737A TW 201704737 A TW201704737 A TW 201704737A TW 105115035 A TW105115035 A TW 105115035A TW 105115035 A TW105115035 A TW 105115035A TW 201704737 A TW201704737 A TW 201704737A
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moiré
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朴憲旭
趙相熙
蘇二彬
金賢中
梁相熙
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Ap系统股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

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Abstract

The present invention relates to Mura quantifying system and method, that is, a Mura quantifying system by a laser crystallization facility including a laser crystallization apparatus, in which the Mura quantifying apparatus is provided in the laser crystallization facility such that a substrate is crystallized by the laser crystallization apparatus and Mura is quantified in real time using an ultraviolet source while the crystallized substrate is moved, and a Mura quantifying method by a laser crystallization facility.

Description

透過使用紫外線之雷射結晶設備的雲紋量化系統及透過使用紫外線之雷射結晶設備的雲紋量化方法Moiré quantification system through laser crystallization equipment using ultraviolet rays and moiré quantification method using laser crystallization equipment using ultraviolet rays

本發明關於一種雲紋量化系統及方法,且更明確地係一種透過使用紫外線之雷射結晶設備的雲紋量化系統、及一種透過雷射結晶設備之雲紋量化方法,該雲量化系統可藉由僅量化基板之雲紋資訊以確保雲紋偵測之可靠度,該基板係在包含有一雷射結晶裝置之一設備中結晶化。The present invention relates to a moiré quantification system and method, and more particularly to a moiré quantification system through a laser crystallization device using ultraviolet rays, and a moiré quantification method through a laser crystallization device, which can be borrowed The substrate is crystallized in an apparatus comprising one of the laser crystallization devices by only quantizing the moiré information of the substrate to ensure the reliability of the moiré detection.

通常需要將譬如非晶質矽薄膜等非晶質多晶形薄膜結晶化之製程,以製造譬如液晶顯示器或太陽能元件等電氣/電子元件。A process for crystallizing an amorphous polycrystalline film such as an amorphous germanium film is generally required to fabricate electrical/electronic components such as liquid crystal displays or solar elements.

需要輻射具既定能量之雷射,以將非晶質矽薄膜結晶化成晶形矽薄膜(此後,為了方便,將待結晶化薄膜稱為「基板」)。該製程中之能量的密度被稱作能量密度(此後稱為「ED」),且具有將結晶化結果最佳化之條件的ED稱作最佳化能量密度(此後稱為「OPED」)。It is necessary to irradiate a laser having a predetermined energy to crystallize the amorphous ruthenium film into a crystalline ruthenium film (hereinafter, the film to be crystallized is referred to as a "substrate" for convenience). The density of the energy in the process is referred to as the energy density (hereinafter referred to as "ED"), and the ED having the condition for optimizing the crystallization result is referred to as the optimized energy density (hereinafter referred to as "OPED").

當以掃描式電子顯微鏡(SEM)針對曝露於一具有OPED之雷射下的產品進行觀察時,晶粒之方向均一致,且晶粒尺寸之均勻性亦屬最優。然而,由於製造程序所需之時間及人力,大體上不可能以SEM檢查所有產品。When viewed by a scanning electron microscope (SEM) for products exposed to an OPED-exposed laser, the orientation of the grains is uniform and the uniformity of grain size is also optimal. However, due to the time and labor required for the manufacturing process, it is generally impossible to inspect all products by SEM.

緣是,已建立一經由目視檢測來選擇OPED之標準,其被稱作雲紋,且係基於雲紋的強度、發生頻率、及發生趨勢來判定OPED。當以目視檢測已歷經ED分裂(在不同ED下,對數十毫米之區域實施結晶化的試驗)之產品時,將難以觀察雲紋,且在OPED區域中可較在ED區域中清楚地察看該產品,及當從OPED區域到一較高ED區域時,將顯現許多雲紋。OPED將依此方式被選定。The reason is that a standard for selecting OPED via visual inspection has been established, which is called moiré, and is based on the intensity, frequency of occurrence, and occurrence trend of the moiré to determine OPED. When visually detecting a product that has undergone ED splitting (testing of crystallization in a region of several tens of millimeters under different EDs), it is difficult to observe moiré, and it can be clearly seen in the ED region in the OPED region. The product, and when going from the OPED area to a higher ED area, will show a lot of moiré. OPED will be selected in this way.

另一方面,使用雷射之結晶化製程係掃描製程,其中雷射脈衝將重疊,且將在重疊區域中因不同於周圍之能量差異而產生雲紋。如此產生之條紋被稱作點(shot)雲紋。On the other hand, a laser crystallization process scanning process is used in which laser pulses will overlap and moiré will be generated in the overlap region due to differences in energy from the surroundings. The strip thus produced is called a shot moiré.

又,當待結晶化基板被掃描,且對目標薄膜實施結晶化時,將藉線性雷射光束之不均勻性產生色斑,其被稱作掃描雲紋。Further, when the substrate to be crystallized is scanned and the target film is crystallized, the unevenness of the linear laser beam is generated to cause a color unevenness, which is called scanning moiré.

為了在藉結晶裝置進行結晶化後,檢驗產品為健適/不良,已使用在試驗儀器中目視檢驗產品的目視檢測。In order to verify that the product is healthy/bad after crystallization by means of a crystallization apparatus, visual inspection of the product by visual inspection in a test apparatus has been used.

然而,目視偵測雲紋有其限制,且依據位置產生各不同型態之雲紋,而難以檢查該雲紋。又,檢測人員有檢測差異,使檢測之生產力、準確度、及重現性較低。更,由於需要檢測人員,因此將浪費人力及成本。However, visually detecting moiré has its limitations, and depending on the position, various patterns of moiré are generated, and it is difficult to check the moiré. Moreover, the tester has a difference in detection, which makes the test productivity, accuracy, and reproducibility low. Moreover, due to the need to inspect personnel, labor and costs will be wasted.

又,可能僅在製造一卡匣(24個產品)的產品後才進行觀察,使整個製造時間延遲。為使此延遲最小化,並非檢測所有產品,而選擇及檢測一些產品,使得製程之可靠度下降。Also, observation may only be made after manufacturing a cartridge (24 products), delaying the overall manufacturing time. To minimize this delay, not all products are tested, and some products are selected and tested, resulting in reduced process reliability.

又,如第1圖所示,在相關技藝中用於偵測雲紋之光源係使用可見光,使得當偵測到雲紋時,在基板下方之基板真空吸盤管線將與雲紋區域一同反射,及因此難以在影像分析中辨別雲紋區域與真空管線。Moreover, as shown in FIG. 1, the light source for detecting moiré in the related art uses visible light, so that when the moiré is detected, the substrate vacuum chuck line under the substrate will be reflected together with the moiré area. And it is therefore difficult to distinguish moiré areas from vacuum lines in image analysis.

當區域中之基板增加時,此真空管線應更密集,因此變得難以辨別各區域。When the substrate in the area is increased, the vacuum line should be denser, so it becomes difficult to distinguish the areas.

本發明之一目的係提供一種透過雷射結晶設備的雲紋量化系統、及一種透過雷射結晶設備之雲紋量化方法,該雲量化系統可藉由僅量化基板之雲紋資訊以確保雲紋偵測之可靠度,該基板係在包含有一雷射結晶裝置之一設備中結晶化。An object of the present invention is to provide a moiré quantification system through a laser crystallization device and a moiré quantification method through a laser crystallization device, which can ensure moiré by only quantifying the moiré information of the substrate The reliability of the detection is that the substrate is crystallized in an apparatus comprising a laser crystallization device.

為達成以上目的,依據本發明之一構想,提供一種透過包含有雷射結晶裝置之雷射結晶設備的雲紋量化系統,其中該雲紋量化裝置被設於該雷射結晶設備中,使得一基板藉該雷射結晶裝置而結晶化,且在移動該結晶化基板的同時,使用一紫外光源即時量化雲紋。In order to achieve the above object, according to one aspect of the present invention, a moiré quantification system is provided which passes through a laser crystallization apparatus including a laser crystallization apparatus, wherein the moiré quantification apparatus is disposed in the laser crystallization apparatus such that The substrate is crystallized by the laser crystallization device, and while moving the crystallized substrate, an ultraviolet light source is used to instantly quantize the moiré.

又,為達成以上目的,依據本發明之另一構想,提供一種透過雷射結晶設備的雲紋量化方法,包含:裝載基板之第一步驟、使用雷射將已裝載基板結晶化之第二步驟、在移動結晶化基板的同時使用紫外光源即時量化雲紋之第三步驟、及將已歷經結晶化與雲紋量化的基板卸載之第四步驟。Moreover, in order to achieve the above object, according to another aspect of the present invention, a moiré quantification method for a laser crystallization apparatus is provided, comprising: a first step of loading a substrate, and a second step of crystallizing the loaded substrate using a laser The third step of instantaneously quantifying moiré using an ultraviolet light source while moving the crystallized substrate, and the fourth step of unloading the substrate that has undergone crystallization and moiré quantification.

該雷射結晶裝置可包含:一處理腔;一雷射光束產生器,被設置於該處理腔之一側端且朝該基板輻射雷射光束;及一平台,被設置於該處理腔中且用於裝載與卸載該基板。The laser crystallization apparatus may include: a processing chamber; a laser beam generator disposed at one side of the processing chamber and radiating a laser beam toward the substrate; and a platform disposed in the processing chamber Used to load and unload the substrate.

該雲紋量化裝置可包含:一影像取得單元,被設置於該平台上方,以即時取得藉該平台所裝載之結晶化基板中的雲紋而不與雷射光束干涉;一紫外光源,被設置於該影像取得單元之一側端,且照射該結晶化基板;一影像處理單元,實施影像預處理及影像處理,以析取已取得到的雲紋影像上之反差影像、及藉由分析經過處理的影像成數據來量化雲紋;及一中央處理單元,控制該影像取得單元、該紫外光源、及該影像處理單元,顯示藉該影像取得單元所取得之影像、及藉該影像處理單元所取得之影像數據,及判定該結晶化基板健適與不良。The moiré quantification device may include: an image acquisition unit disposed above the platform to instantly acquire moiré in the crystallized substrate loaded by the platform without interfering with the laser beam; an ultraviolet light source is set At one side of the image acquisition unit, and illuminating the crystallized substrate; an image processing unit performs image pre-processing and image processing to extract the contrast image on the acquired moiré image, and analyze the The image is processed to quantify the moiré; and a central processing unit controls the image acquisition unit, the ultraviolet light source, and the image processing unit to display images obtained by the image acquisition unit and by the image processing unit The obtained image data and the determination of the crystallized substrate are suitable and defective.

該影像取得單元可為一面型攝影機,且該影像取得單元藉反應關於該平台位置之訊號來調整一觸發,以依固定間隔取得雲紋影像。The image acquisition unit may be a one-side camera, and the image acquisition unit adjusts a trigger by reacting signals related to the position of the platform to obtain a moiré image at regular intervals.

該影像取得單元可藉調整對每一具有最佳化能量密度(OPED)之區域的觸發,以依固定間隔取得雲紋影像。The image acquisition unit can adjust the moiré image at a fixed interval by adjusting the trigger for each region having an optimized energy density (OPED).

該影像取得單元可為一線性掃描攝影機。The image acquisition unit can be a linear scan camera.

該影像取得單元可被配置成與該基板夾一20o ~70o 角度,且該紫外光源可被配置成與該基板夾一20o ~70o 角度。The image acquisition unit may be configured to a 20 o ~ 70 o angle clip and the substrate, and the ultraviolet light source may be configured to a 20 o ~ 70 o angle clip and the substrate.

一偏光鏡可尚被設置於該紫外光源或該影像取得單元前方。藉由旋轉該偏光鏡,只有與雲紋具相同方向的光線可通過,且一綠色濾光鏡可被設置於該紫外光源或該影像取得單元前方。A polarizer may be disposed in front of the ultraviolet light source or the image acquisition unit. By rotating the polarizer, only light in the same direction as the moiré can pass, and a green filter can be disposed in front of the ultraviolet light source or the image acquisition unit.

該中央處理單元可判定該結晶化基板健適與不良,且該中央處理單元可當問題產生時,改變被輻射至該基板之雷射光束的能量密度(ED)。The central processing unit can determine that the crystallized substrate is healthy and defective, and the central processing unit can change the energy density (ED) of the laser beam that is radiated to the substrate when a problem occurs.

依據本發明,可能藉量化在一設備中結晶化之一基板中的雲紋、及即時判定該結晶化基板健適與/不良,以達成穩定的製程管理,其中該設備包含有使用紫外光源之一雷射結晶裝置。According to the present invention, it is possible to quantify the moiré in one of the substrates crystallized in a device, and to immediately determine the health and/or failure of the crystallized substrate to achieve stable process management, wherein the device includes using an ultraviolet light source. A laser crystallization device.

又,當使用紫外光時,基板下方之真空吸盤管線等影像不致出現,使得僅可取得關於該基板之雲紋的資訊,且因此可增加雲紋偵測之可靠度、及可藉已取得到的雲紋資訊大幅改善良率。Moreover, when ultraviolet light is used, images such as a vacuum chuck line under the substrate do not appear, so that only information about the moiré of the substrate can be obtained, and thus the reliability of the moiré detection can be increased, and the The moiré information greatly improved the yield.

又,可能較現有方式減少尋找雲紋所耗費的時間,以確保生產良率。更,可能藉由取得透過檢測人員判定時之誤差及差異的客觀數據,以確保結晶化基板之可靠品質與客觀性。Moreover, it may be possible to reduce the time it takes to find moiré compared to the existing method to ensure production yield. Further, it is possible to obtain reliable data and objectivity of the crystallized substrate by obtaining objective data of errors and differences in the determination by the inspector.

又,藉使用面型攝影機或線性掃描攝影機來取得影像,偵測雲紋所耗費的時間將減少,且反應觸發訊號來取得影像,以可輕易地對一基板的每一區域偵測雲紋。Moreover, by using a face camera or a linear scanning camera to acquire images, the time taken to detect moiré will be reduced, and the trigger signal will be reflected to obtain an image, so that moiré can be easily detected for each area of a substrate.

本發明關於使用機器視覺偵測雲紋、及析取數據,以藉由偵測且僅量化關於基板之雲紋資訊來確保雲紋偵測之可靠度,及即時判定該基板健適/不良,該基板係在包含有一雷射結晶裝置之一設備中結晶化,該雷射結晶裝置使用一紫外光源。The invention relates to the use of machine vision to detect moiré and extract data to ensure the reliability of moiré detection by detecting and quantifying only the moiré information about the substrate, and to instantly determine whether the substrate is healthy/bad, The substrate is crystallized in an apparatus comprising a laser crystallization apparatus that uses an ultraviolet light source.

已實施本發明,藉由在包含有一雷射結晶裝置之一設備中即時檢查製程品質,以提供穩定的製程管理。The present invention has been implemented to provide stable process management by inspecting process quality in an apparatus including one of the laser crystallization devices.

此後,將參考隨附圖式,以詳細說明本發明。第2圖係顯示依據本發明之透過雷射結晶設備的雲紋量化系統之主要部件示圖,第3圖係顯示依據本發明之透過雷射結晶設備的雲紋量化方法方塊圖,第4圖係顯示依據本發明之影像取得單元及紫外光源與基板的夾角示圖,第5圖係顯示雲紋之概括預期表面外型示圖,第6圖係顯示相關於波長的吸收深度示圖,第7圖係顯示依據光源波長之基板圖案示圖,及第8A圖與第8B圖係顯示依據光源波長之基板中雲紋影像示圖。Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. 2 is a view showing main components of a moiré quantification system through a laser crystallization apparatus according to the present invention, and FIG. 3 is a block diagram showing a moiré quantification method of a laser crystallization apparatus according to the present invention, FIG. The figure shows the angle of the image acquisition unit and the ultraviolet light source and the substrate according to the present invention, the fifth figure shows the generalized expected surface appearance of the moiré, and the sixth figure shows the absorption depth diagram related to the wavelength, 7 is a diagram showing a substrate pattern according to the wavelength of the light source, and FIGS. 8A and 8B are diagrams showing a moiré image in the substrate according to the wavelength of the light source.

如圖式所示,依據本發明之一透過雷射結晶設備10的雲紋量化系統,一雲紋量化裝置200被設於包含有一雷射結晶裝置100的一設備中,以在雷射結晶裝置100中將一基板20結晶化,且在移動結晶化基板20的同時,使用一紫外光源220即時偵測及量化雲紋。As shown in the figure, in accordance with one of the present invention, through a moiré quantification system of a laser crystallization apparatus 10, a moiré quantification apparatus 200 is provided in a device including a laser crystallization apparatus 100 for use in a laser crystallization apparatus. In the 100, a substrate 20 is crystallized, and while the crystallized substrate 20 is moved, an ultraviolet light source 220 is used to instantly detect and quantize moiré.

本發明藉由量化基板20中之雲紋,即時判定基板20健適/不良,該基板係在包含有雷射結晶裝置100的設備中結晶化,其中透過機器視覺自動偵測雲紋以量化數據,且在包含有雷射結晶裝置100的設備中即時檢查製程品質,以穩定地管理製程。The present invention instantly determines whether the substrate 20 is healthy/bad by quantifying the moiré in the substrate 20, and the substrate is crystallized in a device including the laser crystallization device 100, wherein the moiré is automatically detected by machine vision to quantify the data. And the process quality is immediately checked in the apparatus including the laser crystallization apparatus 100 to stably manage the process.

通常,雷射結晶裝置100包含一處理腔110、一雷射光束產生器120、及一平台130,且雲紋量化裝置200內含於雷射結晶裝置100中。該雷射光束產生器被設置於處理腔110之一側端且朝基板20輻射雷射光束。該平台被設置於處理腔110中,以裝載與卸載基板20。Generally, the laser crystallization apparatus 100 includes a processing chamber 110, a laser beam generator 120, and a stage 130, and the moiré quantifying apparatus 200 is included in the laser crystallization apparatus 100. The laser beam generator is disposed at one side of the processing chamber 110 and radiates a laser beam toward the substrate 20. The platform is disposed in the processing chamber 110 to load and unload the substrate 20.

依據本發明,用於取得雲紋影像之配置內含於雷射結晶裝置100中,用於處理被偵測到之雲紋影像、製作雲紋之數據、及控制部件的配置被設置於雷射結晶裝置100之外,且包含所有雷射結晶裝置100、及用於量化雲紋之裝置的配置被稱為雷射結晶設備10。亦即,可在該設備中實施雷射結晶、雲紋偵測、及量化。According to the present invention, the configuration for acquiring the moiré image is included in the laser crystallization apparatus 100, and the configuration for processing the detected moiré image, the data for making the moiré, and the control unit are set to the laser. A configuration other than the crystallization apparatus 100, and including all of the laser crystallization apparatus 100, and the apparatus for quantifying moiré is referred to as a laser crystallization apparatus 10. That is, laser crystallization, moiré detection, and quantification can be performed in the device.

用於一般結晶的雷射結晶裝置100處理腔110可為真空腔,其在側端具有閘門,以供置入基板20。The laser crystallization apparatus 100 for general crystallization 100 processing chamber 110 may be a vacuum chamber having a gate at a side end for placement in the substrate 20.

用於輻射雷射光束以將基板20結晶化的雷射光束產生器被設置於處理腔110外之一側端,且設計成使用光學模組及光功率偵測器模組(OPDM),有效率地將呈線型之雷射光束輻射至基板20。A laser beam generator for radiating a laser beam to crystallize the substrate 20 is disposed at one side of the processing chamber 110 and is designed to use an optical module and an optical power detector module (OPDM). The linear laser beam is efficiently radiated to the substrate 20.

通常,基板20具有一沉積於玻璃上之矽薄膜,其中該矽薄膜為非晶質物質,且此中所述之基板20結晶意指,在譬如玻璃等基材基板上之非晶質矽薄膜結晶。為便於說明,本發明中假定基板20包含待結晶之薄膜、及該薄膜下方之基材基板。Generally, the substrate 20 has a germanium film deposited on the glass, wherein the germanium film is an amorphous material, and the substrate 20 crystallized herein means an amorphous germanium film on a substrate such as glass. crystallization. For convenience of explanation, the present invention assumes that the substrate 20 includes a film to be crystallized and a substrate substrate under the film.

用於結晶之雷射光束能量的密度被稱作能量密度(此後稱為「ED」),及具有將結晶成果最佳化之狀態的ED被稱作最佳化能量密度(此後稱為「OPED」)。緣是,提供在既定OPED下之雷射光束。The density of the energy of the laser beam used for crystallization is called the energy density (hereinafter referred to as "ED"), and the ED having the state of optimizing the crystallization result is called the optimized energy density (hereinafter referred to as "OPED"). "). The edge is to provide a laser beam at a given OPED.

該雷射光束產生器譬如使用準分子雷射光束,將基板20結晶化,及平台130被設置於處理腔110中且安裝有基板20,以裝載與卸載基板20。The laser beam generator crystallization of the substrate 20, for example, using an excimer laser beam, and the stage 130 is disposed in the processing chamber 110 and mounted with the substrate 20 to load and unload the substrate 20.

平台130使待結晶化基板20相對於雷射光束移動,使得雷射光束輻射至基板20之整個區域。在這種配置中,可能藉由將平台130位置之編碼器訊號供應至以下將說明的雲紋量化裝置200之一影像取得單元210,且接著使用此等訊號作為影像取得單元210之觸發訊號,而得依固定間隔取得影像。這是為依據平台130之位置來取得雲紋影像且量化雲紋,且因此,可能準確地尋得已產生雲紋之處。The platform 130 moves the substrate 20 to be crystallized relative to the laser beam such that the laser beam is radiated to the entire area of the substrate 20. In this configuration, it is possible to supply the encoder signal of the position of the platform 130 to the image acquisition unit 210 of the moiré quantization device 200, which will be described below, and then use the signals as the trigger signal of the image acquisition unit 210. Images must be taken at regular intervals. This is to obtain the moiré image and quantify the moiré according to the position of the platform 130, and therefore, it is possible to accurately find the place where the moiré has been generated.

又,通常將基板20置放於真空吸盤管線上,使基板20固定於平台130上,其中當藉常用的光(400奈米至700奈米)取得一雲紋影像時,真空吸盤管線將出現於該雲紋影像中,使雲紋偵測之可靠度下降。Moreover, the substrate 20 is usually placed on the vacuum chuck line to fix the substrate 20 to the platform 130. When a moiré image is obtained by using commonly used light (400 nm to 700 nm), the vacuum chuck line will appear. In the moiré image, the reliability of moiré detection is reduced.

雲紋量化裝置200被設於包含有雷射結晶裝置100之設備中,以在移動結晶化基板20的同時,即時量化雲紋。The moiré quantification device 200 is provided in a device including the laser crystallization device 100 to instantly quantize moiré while moving the crystallized substrate 20.

雲紋量化裝置200包含:一影像取得單元210,被設置於平台130上方,以即時取得藉平台130所裝載之結晶化基板20中的雲紋而不與雷射光束干涉;一紫外光源220,被設置於影像取得單元210之一側端,且照射結晶化基板20;一影像處理單元230,實施影像預處理及影像處理,以析取已取得到的雲紋影像上之反差影像、及藉由分析經過處理的影像成數據來量化雲紋;及一中央處理單元240,控制影像取得單元210、紫外光源220、及影像處理單元230,顯示藉影像取得單元210所取得之影像、及藉影像處理單元230所取得之影像數據,及判定結晶化基板20健適/不良。The moiré quantification device 200 includes an image acquisition unit 210 disposed above the platform 130 to instantly acquire the moiré in the crystallized substrate 20 loaded by the platform 130 without interfering with the laser beam; an ultraviolet light source 220, It is disposed at one side of the image acquisition unit 210 and illuminates the crystallized substrate 20; an image processing unit 230 performs image pre-processing and image processing to extract the contrast image on the acquired moiré image, and borrow The cloud image is quantized by analyzing the processed image into data; and a central processing unit 240, the image capturing unit 210, the ultraviolet light source 220, and the image processing unit 230 are displayed, and the image obtained by the image capturing unit 210 and the image obtained by the image capturing unit 210 are displayed. The image data acquired by the processing unit 230 determines that the crystallized substrate 20 is healthy/bad.

如上所述,雲紋量化裝置200之影像取得單元210紫外光源220可被設於雷射結晶裝置100之處理腔110內,而用於處理已取得到的影像之影像處理單元230及中央處理單元240可被設於處理腔110外。As described above, the image obtaining unit 210 of the moiré quantification device 200 can be disposed in the processing chamber 110 of the laser crystallization apparatus 100, and the image processing unit 230 and the central processing unit for processing the acquired image. 240 can be disposed outside the processing chamber 110.

用於取得結晶化基板20之雲紋影像的影像取得單元210係常用的電荷耦合元件(CCD)攝影機,其連接至中央處理單元240以作開啟/關閉及操作控制,其中使用一面型攝影機211或一線性掃描攝影機212以減少偵測雲紋所耗費的時間,且可使用其他能夠取得影像之攝影機。The image acquisition unit 210 for obtaining the moiré image of the crystallized substrate 20 is a commonly used charge coupled device (CCD) camera that is connected to the central processing unit 240 for on/off and operation control using a side camera 211 or A linear scan camera 212 reduces the time it takes to detect moiré, and other cameras capable of capturing images can be used.

當需要使用面型攝影機211來取得影像時,可能藉調整一同步化觸發而依固定間隔取得影像。例如,可能反應關於平台130位置之編碼器訊號來調整面型攝影機211之觸發,以依固定間隔取得雲紋影像。緣是,可能尋得已在基板20上取得到的雲紋影像,而可能輕易地判定基板20上多個位置處之良好與不良結晶。When it is necessary to use the face camera 211 to acquire images, it is possible to acquire images at regular intervals by adjusting a synchronization trigger. For example, an encoder signal regarding the position of the platform 130 may be reacted to adjust the trigger of the face camera 211 to obtain a moiré image at regular intervals. The edge is that a moiré image that has been taken on the substrate 20 may be found, and good and poor crystallization at a plurality of locations on the substrate 20 may be easily determined.

又,可能藉調整對每一OPED區域、即每一最佳化能量密度區域之觸發,以依固定間隔取得雲紋影像。亦即,可能藉由對每一基板20區域以不同OPED實施結晶化、及輸入OPED至影像取得單元210作為觸發,以判定何處已較佳實施結晶化。Moreover, it is possible to adjust the trigger for each of the OPED regions, that is, each optimized energy density region, to obtain the moiré image at regular intervals. That is, it is possible to determine whether the crystallization has been preferably performed by performing crystallization on each of the substrate 20 regions with different OPED and inputting the OPED to the image acquisition unit 210 as a trigger.

紫外光源220被設置於影像取得單元210之一側端且照射結晶化基板20,以可適當地取得影像。該紫外光源可具有一圓頂、一環、一棒、或一軸外型,且使用紫外線(具有400奈米或更小之波長帶)。紫外光源220可調整角度、亦即可藉由以下將說明之中央處理單元240來調整紫外光源220之開啟/關閉、及角度。The ultraviolet light source 220 is provided at one side end of the image acquisition unit 210 and irradiates the crystallized substrate 20 so that an image can be appropriately obtained. The ultraviolet light source may have a dome, a ring, a rod, or an off-axis type, and uses ultraviolet rays (having a wavelength band of 400 nm or less). The ultraviolet light source 220 can adjust the angle, and the opening/closing and angle of the ultraviolet light source 220 can be adjusted by the central processing unit 240, which will be described below.

通常,將基板20置放於真空吸盤管線上,使基板20固定於平台130上,其中當藉常用的可見光(400奈米至700奈米)取得一雲紋影像時,真空吸盤管線將因經由基板20反射之影像而與該雲紋影像重疊,使雲紋偵測之可靠度下降。Typically, the substrate 20 is placed on a vacuum chuck line to secure the substrate 20 to the platform 130. When a moiré image is obtained by conventional visible light (400 nm to 700 nm), the vacuum chuck line will pass through The image reflected by the substrate 20 overlaps with the moiré image to reduce the reliability of moiré detection.

將紫外光源220用於本發明中,以解決此問題。紫外光源220可取得因基板20(例如,玻璃基材基板)上之一矽薄膜厚度而不透射但被吸收、且依一既定角度被反射於雲紋影像中的一影像。An ultraviolet light source 220 is used in the present invention to solve this problem. The ultraviolet light source 220 can obtain an image that is not transmitted through the thickness of the film on the substrate 20 (for example, the glass substrate) but is absorbed and reflected in the moiré image at a predetermined angle.

亦即,當使用紫外光源220時,經由基板反射之影像將被減少或消除,使取得雲紋影像之可靠度獲改善。That is, when the ultraviolet light source 220 is used, the image reflected through the substrate will be reduced or eliminated, and the reliability of obtaining the moiré image is improved.

如第4圖中所示之面型攝影機211及線性掃描攝影機212可被配置成與基板20夾一20o ~70o 角度(θAL ),且紫外光源220可被配置成與基板20夾一20o ~70o 角度(θAL )。第4A圖顯示面型攝影機211及第4B圖顯示線性掃描攝影機212。面型攝影機211具有與一水平配置基板所夾的一角度。The face camera 211 and the linear scan camera 212 as shown in FIG. 4 can be configured to be at an angle (θ AL ) of 20 o to 70 o with the substrate 20, and the ultraviolet light source 220 can be configured to be sandwiched with the substrate 20. 20 o ~ 70 o angle (θ AL ). Fig. 4A shows a face camera 211 and a 4B chart showing a linear scan camera 212. The face camera 211 has an angle with a horizontally disposed substrate.

第5圖顯示一概括預期雲紋表面外型,其中影像取得單元210與紫外光源220夾不同角度,以取得與相鄰雲紋重疊之影像、或取得關於雲紋高度及寬度之錯誤資訊。Figure 5 shows an overview of the expected moiré surface appearance, wherein the image acquisition unit 210 and the ultraviolet light source 220 are at different angles to obtain an image that overlaps the adjacent moiré, or to obtain error information about the height and width of the moiré.

又,影像處理單元230實施影像預處理及影像處理,以在已取得到的雲紋影像上取得反差影像,並且分析經處理過的影像成數據來量化雲紋。Moreover, the image processing unit 230 performs image preprocessing and image processing to obtain a contrast image on the acquired moiré image, and analyzes the processed image into data to quantize the moiré.

通常難以目視辨識雲紋影像,因此需析取反差影像來增加該雲紋影像之可見度,因此藉由平均已取得到的影像中之局部亮度值來創建平滑影像,以取得反差影像。It is often difficult to visually recognize the moiré image, so the contrast image is extracted to increase the visibility of the moiré image. Therefore, a smooth image is created by averaging the local brightness values in the acquired image to obtain a contrast image.

藉由從最初取得到的影像扣除透過預處理所取得到的參考影像數據值,將取得反差影像。藉由輸入基於該反差影像之譬如反差比及線型等選擇性條件,可取得分析影像。緣是,將取得最終雲紋偵測之量化影像數據。The contrast image is obtained by subtracting the reference image data value obtained by the preprocessing from the image originally acquired. The analysis image can be obtained by inputting a selectivity condition such as a contrast ratio and a line type based on the contrast image. The reason is that the quantized image data of the final moiré detection will be obtained.

個人電腦通常被用作為中央處理單元240,其控制影像取得單元210、紫外光源220、及影像處理單元230,顯示藉影像取得單元210所取得之影像的數據、及藉影像處理單元230所取得的影像,以及判定結晶化基板20健適/不良。The personal computer is generally used as the central processing unit 240, and controls the image acquisition unit 210, the ultraviolet light source 220, and the image processing unit 230 to display the data of the image acquired by the image acquisition unit 210 and the image obtained by the image processing unit 230. The image and the determination of the crystallized substrate 20 are healthy/bad.

例如,中央處理單元240可由一鍵盤、一面板、及一控制器組成。該鍵盤用於控制影像取得單元210、紫外光源220、及影像處理單元230,且輸入設定值。該面板用於顯示已取得到的影像及經處理過的影像數據。該控制器基於影像數據來判定結晶化基板20健適/不良,及用於控制所有組件。For example, central processing unit 240 can be comprised of a keyboard, a panel, and a controller. The keyboard is used to control the image acquisition unit 210, the ultraviolet light source 220, and the image processing unit 230, and input a set value. This panel is used to display the acquired images and processed image data. The controller determines whether the crystallized substrate 20 is healthy/bad based on image data, and is used to control all components.

中央處理單元240被設於雷射結晶裝置100外。該中央處理單元可控制不僅雲紋量化裝置200,且亦可控制包含有雷射結晶裝置100之整個設備。又,中央處理單元240可控制雷射光束產生器120及雷射結晶裝置100之平台130的運動及位置,其中平台130之位置被輸入至影像取得單元210作為觸發訊號,以依固定間隔操作影像取得單元210。The central processing unit 240 is disposed outside of the laser crystallization apparatus 100. The central processing unit can control not only the moiré quantification device 200 but also the entire device including the laser crystallization device 100. Moreover, the central processing unit 240 can control the motion and position of the laser beam generator 120 and the platform 130 of the laser crystallization apparatus 100, wherein the position of the platform 130 is input to the image acquisition unit 210 as a trigger signal to operate the image at regular intervals. The unit 210 is acquired.

中央處理單元240可使用已取得到的影像來判定結晶化基板20健適/不良。可當問題產生時,改變被輻射至基板20之雷射光束的能量密度,其中該ED可藉由使用者當必要時基於判定健適/不良之結果所預先或直接設定的一程式而自動地改變。The central processing unit 240 can determine whether the crystallized substrate 20 is healthy/bad using the acquired image. The energy density of the laser beam radiated to the substrate 20 can be varied when the problem arises, wherein the ED can be automatically generated by the user based on a program that is pre- or directly set based on the result of determining the fit/badness, if necessary. change.

此後將說明依據本發明之透過雷射結晶設備10的雲紋量化方法。Hereinafter, the moiré quantification method of the laser crystallization apparatus 10 according to the present invention will be explained.

第3圖係顯示依據本發明之雲紋量化方法示圖。如第2圖所示,透過雷射結晶設備10之雲紋量化方法包含裝載基板20之第一步驟、使用雷射對已裝載基板20實施結晶化之第二步驟、在移動結晶化基板20的同時使用紫外線即時量化雲紋之第三步驟、及將已歷經結晶化與雲紋量化的基板20卸載之第四步驟。Figure 3 is a diagram showing a moiré quantization method according to the present invention. As shown in FIG. 2, the moiré quantification method of the laser crystallization apparatus 10 includes a first step of loading the substrate 20, a second step of crystallizing the loaded substrate 20 using a laser, and moving the crystallized substrate 20. The third step of simultaneously quantifying moiré using ultraviolet rays and the fourth step of unloading the substrate 20 which has been subjected to crystallization and moiré quantification are simultaneously performed.

基板20被安裝於雷射結晶裝置100之平台130上,且被裝載至一雷射結晶化位置。藉由來自該雷射光束產生器之雷射光束將已裝載基板20結晶化。藉由在移動結晶化基板20的同時透過影像取得單元210從結晶化基板20取得雲紋影像、及藉由處理此等影像,將即時量化雲紋。接著,將已歷經結晶化及雲紋量化的基板20卸載,從而完成處理。The substrate 20 is mounted on the platform 130 of the laser crystallization apparatus 100 and loaded to a laser crystallization position. The loaded substrate 20 is crystallized by a laser beam from the laser beam generator. The moiré image is obtained from the crystallized substrate 20 by the image acquisition unit 210 while moving the crystallized substrate 20, and by processing the images, the moiré is instantly quantized. Next, the substrate 20 which has undergone crystallization and moiré quenching is unloaded, thereby completing the process.

第三步驟係從結晶化基板20取得雲紋影像、對已取得到的雲紋影像實施影像處理、藉分析經影像處理過的影像成數據來量化雲紋、及接著基於該已量化雲紋來判定基板20結晶化程度健適/不良的程序。The third step is to obtain a moiré image from the crystallized substrate 20, perform image processing on the acquired moiré image, analyze the image processed image into data to quantize the moiré, and then based on the quantized moiré. A procedure for determining the degree of crystallization of the substrate 20 is satisfactory/bad.

在從結晶化基板20取得雲紋影像的步驟中,藉由調整同步化觸發而依固定間隔取得雲紋影像。In the step of acquiring the moiré image from the crystallized substrate 20, the moiré image is obtained at a fixed interval by adjusting the synchronization trigger.

為取得結晶化基板20之雲紋影像,可使用譬如面型攝影機211或線性掃描攝影機212等影像取得單元210,且可能藉調整關於影像取得單元210位置的同步化觸發,而依固定間隔取得影像。In order to obtain the moiré image of the crystallized substrate 20, an image acquisition unit 210 such as a face camera 211 or a linear scan camera 212 may be used, and the image may be acquired at a fixed interval by adjusting the synchronization trigger regarding the position of the image acquisition unit 210. .

例如,可能反應關於平台130位置之編碼器訊號來調整面型攝影機211之觸發,以依固定間隔取得雲紋影像。緣是,可能尋得已在基板20上取得到的雲紋影像,而可能輕易地判定基板20上多個位置處之良好與不良結晶。For example, an encoder signal regarding the position of the platform 130 may be reacted to adjust the trigger of the face camera 211 to obtain a moiré image at regular intervals. The edge is that a moiré image that has been taken on the substrate 20 may be found, and good and poor crystallization at a plurality of locations on the substrate 20 may be easily determined.

可選擇性地對來自已取得到的影像之一聚焦區域、亦即除散焦區域外之一有效區域偵測與量化雲紋,且可依每一區域之特性與參考位準作比較的一絕對比較型、或比較各區域之特性差異的一相對比較型,來判定基板20健適/不良。Optionally detecting and quantifying moiré from a focus area of the acquired image, that is, an effective area other than the defocus area, and comparing the characteristics of each area with a reference level It is judged whether the substrate 20 is healthy/bad by the absolute comparison type or a relative comparison type in which the difference in characteristics of each region is compared.

又,可能藉調整對每一OPED區域、即每一最佳化能量密度區域之觸發,以依固定間隔取得雲紋影像。亦即,可能藉由對每一基板20區域以不同OPED實施結晶化、及輸入OPED至影像取得單元210作為觸發,以判定何處已較佳實施結晶化。Moreover, it is possible to adjust the trigger for each of the OPED regions, that is, each optimized energy density region, to obtain the moiré image at regular intervals. That is, it is possible to determine whether the crystallization has been preferably performed by performing crystallization on each of the substrate 20 regions with different OPED and inputting the OPED to the image acquisition unit 210 as a trigger.

針對藉線性掃描攝影機212所取得之影像,修正透視角,析取一處理區域、即一有效區域,及藉實施直方圖量化或以累積廓形為基礎的計算來計算區域特性,從而判定基板20健適/不良。For the image obtained by the linear scan camera 212, the perspective angle is corrected, a processing area, that is, an effective area is extracted, and the area characteristic is calculated by performing histogram quantization or calculation based on the cumulative profile, thereby determining the substrate 20 Fitness / bad.

藉每一區域之特性與參考位準作比較、或比較各區域特性之差異,以達成基板健適/不良之判定。By comparing the characteristics of each region with the reference level, or comparing the differences in the characteristics of each region, the determination of substrate health/badness is achieved.

為移除或減少經由基板20反射之真空吸盤管線影像,本發明中使用紫外光源220。紫外光源220可取得因基板20(例如,玻璃基材基板)上之一矽薄膜厚度而不透射但被吸收、且依一既定角度被反射於雲紋影像中的一影像。To remove or reduce the image of the vacuum chuck line reflected through the substrate 20, an ultraviolet light source 220 is used in the present invention. The ultraviolet light source 220 can obtain an image that is not transmitted through the thickness of the film on the substrate 20 (for example, the glass substrate) but is absorbed and reflected in the moiré image at a predetermined angle.

亦即,當使用紫外光源220時,經由基板20反射之影像將被減少或消除,使取得雲紋影像之可靠度獲改善。That is, when the ultraviolet light source 220 is used, the image reflected through the substrate 20 will be reduced or eliminated, and the reliability of obtaining the moiré image is improved.

面型攝影機211及線性掃描攝影機212可被配置成與基板20夾一20o ~70o 角度(θAL ),且紫外光源220可被配置成與基板20夾一20o ~70o 角度(θAL )。第4A圖顯示面型攝影機211及第4B圖顯示線性掃描攝影機212。面型攝影機211具有與水平配置基板20所夾的一角度。The face camera 211 and the linear scan camera 212 can be configured to have an angle (θ AL ) of 20 o ~ 70 o with the substrate 20, and the ultraviolet light source 220 can be configured to be at an angle of 20 o ~ 70 o with the substrate 20. AL ). Fig. 4A shows a face camera 211 and a 4B chart showing a linear scan camera 212. The face camera 211 has an angle with the horizontal arrangement substrate 20.

第5圖顯示一概括預期雲紋表面外型,其中影像取得單元210與紫外光源220夾不同角度,以取得與相鄰雲紋重疊之影像、或取得關於雲紋高度及寬度之錯誤資訊。Figure 5 shows an overview of the expected moiré surface appearance, wherein the image acquisition unit 210 and the ultraviolet light source 220 are at different angles to obtain an image that overlaps the adjacent moiré, or to obtain error information about the height and width of the moiré.

又,用於已取得到的雲紋影像之影像處理係由影像處理單元230實施,其中用於取得反差影像之影像預處理及影像處理可對已取得到的雲紋影像實施,且可藉分析經處理過的影像成數據來量化雲紋。Moreover, the image processing for the acquired moiré image is implemented by the image processing unit 230, wherein the image preprocessing and image processing for obtaining the contrast image can be performed on the acquired moiré image, and can be analyzed by The processed image is used as data to quantify moiré.

例如,藉由平均已取得到的影像中之局部亮度值來建立平滑影像,以析取反差影像。亦即,藉由從最初取得到的影像扣除透過預處理所取得到的參考影像數據值,將取得反差影像。藉由輸入基於該反差影像之譬如反差比及線型等選擇性條件,可取得分析影像。緣是,將取得最終雲紋偵測之量化影像數據。For example, a smooth image is created by averaging the local luminance values in the acquired image to extract the contrast image. That is, the contrast image is obtained by subtracting the reference image data value obtained by the preprocessing from the image originally acquired. The analysis image can be obtained by inputting a selectivity condition such as a contrast ratio and a line type based on the contrast image. The reason is that the quantized image data of the final moiré detection will be obtained.

又,基於已量化之雲紋來判定基板20之結晶化程度健適/不良,且當問題產生時,輻射至基板20之雷射光束的能量密度(ED)將改變,該改變係由中央處理單元240實施。Further, it is determined that the degree of crystallization of the substrate 20 is healthy/bad based on the quantized moiré, and when a problem occurs, the energy density (ED) of the laser beam radiated to the substrate 20 is changed, and the change is performed by the central processing. Unit 240 is implemented.

此後將說明,當藉依據本發明之紫外光源220取得雲紋影像、及當藉可見光取得雲紋影像時的比較數據。Hereinafter, the comparison data when the moiré image is obtained by the ultraviolet light source 220 according to the present invention and the moiré image is obtained by the visible light will be described.

第6圖顯示相關於波長的吸收深度,其中在400奈米或更小之紫外光源220的範圍,影像將因矽薄膜結晶化厚度而不透射,以致不產生從基板反射的影像。然而,在可見光範圍,將透射橫越矽薄膜結晶化厚度,因此將取得譬如基板20下方之真空吸盤管線等影像。Figure 6 shows the depth of absorption associated with the wavelength, where in the range of 400 nm or less of the ultraviolet light source 220, the image will be untransmissive due to the crystallized thickness of the tantalum film so that no image is reflected from the substrate. However, in the visible range, the transmission traverses the crystallization thickness of the ruthenium film, so that an image such as a vacuum chuck line below the substrate 20 is obtained.

第7圖顯示依據光波長之基板20的影像,其中可看出基板20之圖案(譬如,真空吸盤管線)縮減,使其看起來模糊。Figure 7 shows an image of the substrate 20 in accordance with the wavelength of the light, wherein it can be seen that the pattern of the substrate 20 (e.g., the vacuum chuck line) is reduced to make it appear blurry.

第8A圖與第8B圖分別顯示,當紫外光源220輻射與當可見光輻射時的雲紋影像。當可見光輻射時,取得被反射於基板20上之真空吸盤管線,及當來自紫外光源220之紫外光輻射時,取得雲紋影像,但基板20上未出現真空吸盤管線。Fig. 8A and Fig. 8B respectively show the moiré image when the ultraviolet light source 220 is radiated and when it is irradiated with visible light. When the visible light is irradiated, the vacuum chuck line reflected on the substrate 20 is taken, and when the ultraviolet light from the ultraviolet light source 220 is irradiated, the moiré image is obtained, but the vacuum chuck line does not appear on the substrate 20.

如上所述,依據本發明,可能藉量化在一設備中結晶化之基板中的雲紋、及即時判定結晶化基板健適/不良,以達成穩定的製程管理,其中該設備包含有使用紫外光之一雷射結晶裝置。As described above, according to the present invention, it is possible to quantify the moiré in the substrate crystallized in a device and to instantly determine the health/defect of the crystallized substrate to achieve stable process management, wherein the device includes the use of ultraviolet light. One of the laser crystallization devices.

特別地,當使用紫外光時,譬如基板下方之真空吸盤管線等影像不致出現,使得僅可取得關於該基板之雲紋影像的資訊,且因此可增加雲紋偵測之可靠度、及可藉已取得到的雲紋資訊大幅改善良率。In particular, when ultraviolet light is used, an image such as a vacuum chuck line under the substrate does not appear, so that only information about the moiré image of the substrate can be obtained, and thus the reliability of the moiré detection can be increased, and The moiré information that has been obtained has greatly improved the yield.

10‧‧‧雷射結晶裝置10‧‧‧Laser crystallization unit

20‧‧‧基板20‧‧‧Substrate

100‧‧‧雷射結晶裝置100‧‧‧Laser crystallizer

110‧‧‧處理腔110‧‧‧Processing chamber

120‧‧‧雷射光束產生器120‧‧‧Laser beam generator

130‧‧‧平台130‧‧‧ platform

200‧‧‧雲紋量化裝置200‧‧‧ moiré quantification device

210‧‧‧影像取得單元210‧‧‧Image acquisition unit

211‧‧‧面型攝影機211‧‧‧ Face camera

212‧‧‧線性掃描攝影機212‧‧‧Linear Scan Camera

220‧‧‧紫外光源220‧‧‧UV light source

230‧‧‧影像處理單元230‧‧‧Image Processing Unit

240‧‧‧中央處理單元240‧‧‧Central Processing Unit

θ‧‧‧AL角度Θ‧‧‧ AL angle

由以下詳細說明結合隨附圖式,將可更清楚地了解本發明的以上及其他目的、特點、與其他優點,其中:The above and other objects, features, and other advantages of the present invention will become more <RTIgt;

第1圖顯示相關技藝中藉可見光取得之雲紋影像;Figure 1 shows a moiré image obtained by visible light in the related art;

第2圖係顯示依據本發明之透過雷射結晶設備的雲紋量化系統之主要部件示圖;2 is a view showing main components of a moiré quantification system through a laser crystallization apparatus according to the present invention;

第3圖係顯示依據本發明之透過雷射結晶設備的雲紋量化方法方塊圖;Figure 3 is a block diagram showing a moiré quantification method of a laser crystallization apparatus according to the present invention;

第4A圖與第4B圖係顯示依據本發明之影像取得單元及紫外光源對基板的角度示圖;4A and 4B are angle diagrams showing the image acquisition unit and the ultraviolet light source to the substrate according to the present invention;

第5圖係顯示雲紋之概括預期表面外型示圖;Figure 5 is a diagram showing the generalized expected surface appearance of the moiré;

第6圖係顯示相關於波長的吸收深度示圖;Figure 6 is a graph showing the absorption depth associated with the wavelength;

第7圖係顯示依據光源波長之基板圖案示圖;及Figure 7 is a diagram showing a substrate pattern according to the wavelength of the light source; and

第8A圖與第8B圖係顯示依據光源波長之基板中雲紋影像示圖。Figures 8A and 8B show a moiré image in a substrate according to the wavelength of the light source.

no

10‧‧‧雲紋量化系統 10‧‧‧ Moiré quantification system

20‧‧‧基板 20‧‧‧Substrate

100‧‧‧雷射結晶裝置 100‧‧‧Laser crystallizer

110‧‧‧處理腔 110‧‧‧Processing chamber

120‧‧‧雷射光束產生器 120‧‧‧Laser beam generator

130‧‧‧平台 130‧‧‧ platform

200‧‧‧雲紋量化裝置 200‧‧‧ moiré quantification device

210‧‧‧影像取得單元 210‧‧‧Image acquisition unit

220‧‧‧紫外光源 220‧‧‧UV light source

230‧‧‧影像處理單元 230‧‧‧Image Processing Unit

240‧‧‧中央處理單元 240‧‧‧Central Processing Unit

Claims (17)

一種透過包含有雷射結晶裝置之雷射結晶設備的雲紋量化系統,其中該雲紋量化裝置被設於該雷射結晶設備中,使得一基板藉該雷射結晶裝置而結晶化,且在移動該結晶化基板的同時,使用一紫外光源即時量化雲紋。A moiré quantification system that passes through a laser crystallization apparatus including a laser crystallization apparatus, wherein the moiré quantification apparatus is disposed in the laser crystallization apparatus such that a substrate is crystallized by the laser crystallization apparatus, and While moving the crystallized substrate, an ultraviolet light source is used to instantly quantize the moiré. 如請求項1所述之系統,其中該雷射結晶裝置包括: 一處理腔; 一雷射光束產生器,被設置於該處理腔之一側端且朝該基板輻射雷射光束;及 一平台,被設置於該處理腔中且用於裝載與卸載該基板。The system of claim 1, wherein the laser crystallization apparatus comprises: a processing chamber; a laser beam generator disposed at one side of the processing chamber and radiating a laser beam toward the substrate; and a platform , disposed in the processing chamber and used to load and unload the substrate. 如請求項2所述之系統,其中該雲紋量化裝置包括: 一影像取得單元,被設置於該平台上方,以即時取得藉該平台所裝載之結晶化基板中的雲紋而不與雷射光束干涉; 一紫外光源,被設置於該影像取得單元之一側端,且照射該結晶化基板; 一影像處理單元,實施影像預處理及影像處理,以析取已取得到的雲紋影像上之反差影像、及藉由分析經過處理的影像成數據來量化雲紋;及 一中央處理單元,控制該影像取得單元、該紫外光源、及該影像處理單元,顯示藉該影像取得單元所取得之影像、及藉該影像處理單元所取得之影像數據,及判定該結晶化基板健適與不良。The system of claim 2, wherein the moiré quantification device comprises: an image acquisition unit disposed above the platform to instantly acquire moiré in the crystallized substrate loaded by the platform without laser Beam interference; an ultraviolet light source is disposed at one side of the image acquisition unit and illuminates the crystallized substrate; an image processing unit performs image preprocessing and image processing to extract the acquired moiré image And the central processing unit controls the image acquisition unit, the ultraviolet light source, and the image processing unit to display the image obtained by the image acquisition unit. The image and the image data obtained by the image processing unit are determined, and the crystallized substrate is determined to be suitable and defective. 如請求項3所述之系統,其中該影像取得單元係一面型攝影機。The system of claim 3, wherein the image acquisition unit is a one-sided camera. 如請求項4所述之系統,其中該影像取得單元藉反應關於該平台位置之訊號來調整一觸發,以依固定間隔取得雲紋影像。The system of claim 4, wherein the image acquisition unit adjusts a trigger by reacting a signal about the position of the platform to obtain a moiré image at a fixed interval. 如請求項4所述之系統,其中該影像取得單元藉調整對每一具有最佳化能量密度(OPED)之區域的觸發,以依固定間隔取得雲紋影像。The system of claim 4, wherein the image acquisition unit adjusts the trigger for each region having an optimized energy density (OPED) to obtain the moiré image at regular intervals. 如請求項3所述之系統,其中該影像取得單元係一線性掃描攝影機。The system of claim 3, wherein the image acquisition unit is a linear scan camera. 如請求項3所述之系統,其中該影像取得單元被配置成與該基板夾一20o ~70o 角度。The system of claim 3, wherein the image acquisition unit is configured to be at an angle of 20 o to 70 o with the substrate. 如請求項8所述之系統,其中該紫外光源被配置成與該基板夾一20o ~70o 角度。The system of claim 8, wherein the ultraviolet light source is configured to be at an angle of 20 o to 70 o with the substrate. 如請求項3所述之系統,其中該中央處理單元判定該結晶化基板健適與不良,且該中央處理單元在問題產生時,改變被輻射至該基板之雷射光束的能量密度(ED)。The system of claim 3, wherein the central processing unit determines that the crystallized substrate is healthy and defective, and the central processing unit changes the energy density (ED) of the laser beam radiated to the substrate when a problem occurs. . 一種透過雷射結晶設備的雲紋量化方法,該方法包括: 一第一步驟,裝載一基板; 一第二步驟,使用一雷射將該已裝載基板結晶化; 一第三步驟,在移動該結晶化基板的同時,使用一紫外光源即時量化雲紋;及 一第四步驟,將已歷經結晶化與雲紋量化的基板卸載。A moiré quantification method for a laser crystallization apparatus, the method comprising: a first step of loading a substrate; a second step of crystallizing the loaded substrate using a laser; and a third step of moving the While crystallizing the substrate, an ultraviolet light source is used to instantly quantize the moiré; and a fourth step is to unload the substrate that has undergone crystallization and moiré quantification. 如請求項11所述之方法,其中該第三步驟包括: 使用一紫外光源取得該結晶化基板之一雲紋影像; 對該已取得到的雲紋影像實施影像處理; 藉分析該已歷經影像處理的影像成數據來量化雲紋;及 基於該已量化雲紋來判定一基板之結晶化程度健適與不良。The method of claim 11, wherein the third step comprises: obtaining a moiré image of the crystallized substrate by using an ultraviolet light source; performing image processing on the acquired moiré image; and analyzing the image through the image The processed image is used as data to quantify moiré; and based on the quantized moiré, the degree of crystallization of a substrate is determined to be robust and poor. 如請求項12所述之方法,其中該取得結晶化基板之雲紋影像者係藉調整一位置同步化觸發,以依固定間隔取得雲紋影像。The method of claim 12, wherein the moiré image obtained by crystallization of the substrate is adjusted by a position synchronization trigger to obtain a moiré image at regular intervals. 如請求項12所述之方法,其中在該取得結晶化基板之雲紋影像者中,一用於取得雲紋影像之影像取得單元被配置成與該基板夾一20o ~70o 角度。The method of claim 12, wherein in the moiré image capturing the crystallized substrate, an image obtaining unit for acquiring the moiré image is disposed at an angle of 20 o to 70 o with the substrate. 如請求項14所述之方法,其中該紫外光源被配置成與該基板夾一20o ~70o 角度。The method of claim 14, wherein the ultraviolet light source is configured to be at an angle of 20 o to 70 o with the substrate. 如請求項12所述之方法,其中該對已取得到的雲紋影像實施影像處理者係實施影像預處理及影像處理,以析取該已取得到的雲紋影像之反差影像,及藉由分析該經過處理的影像成數據來量化雲紋。The method of claim 12, wherein the image processing is performed on the acquired moiré image image processing system to perform image preprocessing and image processing to extract the contrast image of the acquired moiré image, and The processed image is analyzed into data to quantify moiré. 如請求項12所述之方法,其中該基於已量化雲紋來判定基板之結晶化程度健適與不良者係當判定結晶化基板健適與不良而產生問題時,改變被輻射至該基板之雷射光束的能量密度(ED)。The method of claim 12, wherein the determining whether the degree of crystallization of the substrate is based on the quantized moiré is poor or not, and when the problem is determined that the crystallized substrate is suitable or defective, the change is radiated to the substrate. The energy density (ED) of the laser beam.
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