TW201703875A - Resist liquid storage container, resist liquid supplying device, resist liquid coating device, resist liquid storage device, and method of manufacturing a mask blank - Google Patents

Resist liquid storage container, resist liquid supplying device, resist liquid coating device, resist liquid storage device, and method of manufacturing a mask blank Download PDF

Info

Publication number
TW201703875A
TW201703875A TW105108398A TW105108398A TW201703875A TW 201703875 A TW201703875 A TW 201703875A TW 105108398 A TW105108398 A TW 105108398A TW 105108398 A TW105108398 A TW 105108398A TW 201703875 A TW201703875 A TW 201703875A
Authority
TW
Taiwan
Prior art keywords
photoresist
liquid
storage container
temperature
photoresist liquid
Prior art date
Application number
TW105108398A
Other languages
Chinese (zh)
Other versions
TWI689356B (en
Inventor
白鳥浩
白倉光洋
本間裕介
Original Assignee
Hoya股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya股份有限公司 filed Critical Hoya股份有限公司
Publication of TW201703875A publication Critical patent/TW201703875A/en
Application granted granted Critical
Publication of TWI689356B publication Critical patent/TWI689356B/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Coating Apparatus (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

A resist liquid storage container (1) includes a flexible bag portion (2) having a containing portion (2a) storing a resist liquid, an injection tube (9) communicating with the containing portion (2a) and adapted to inject the resist liquid, and a discharge pipe (8) communicating with the containing portion (2a) and adapted to discharge the resist liquid to the outside of the resist liquid storage container (1).

Description

光阻液保管容器、光阻液供給裝置、光阻液塗佈裝置、光阻液保存裝置、以及空白遮罩之製造方法 Photoresist liquid storage container, photoresist liquid supply device, photoresist liquid application device, photoresist liquid storage device, and method for manufacturing blank mask

本發明係關於一種在光微影之圖案形成所使用之保管光阻液之光阻液保管容器、從光阻液保管容器供給光阻液之光阻液供給裝置、從光阻液供給裝置接收光阻液之供給而將光阻液塗佈於基板等之光阻液塗佈裝置、將光阻液保管容器之光阻液以適當狀態加以保存之光阻液保存裝置、以及空白遮罩之製造方法。 The present invention relates to a photoresist liquid storage container for storing a photoresist liquid used for pattern formation of photolithography, a photoresist liquid supply device for supplying a photoresist liquid from a photoresist liquid storage container, and receiving from a photoresist liquid supply device A photoresist liquid coating device that applies a photoresist solution to a substrate or the like, a photoresist liquid storage device that stores the photoresist liquid in the photoresist storage container in an appropriate state, and a blank mask Production method.

以平板顯示器(FPD:Flat Panel Display)等為代表之半導體元件之製造、磁碟或光碟等微細構造物之形成、加工中係使用高感度的光阻液。此外,光罩程序中對空白遮罩所做光阻液的塗佈係以旋塗法來進行。旋塗法係於旋塗機上設置對象基板,對於該基板表面從光阻液塗佈裝置之噴嘴以既定量滴下光阻液之後使得旋塗機以高速進行旋轉,藉以擴散塗佈光阻液。 A high-sensitivity photoresist liquid is used for the formation and processing of a semiconductor device such as a flat panel display (FPD: Flat Panel Display) or a fine structure such as a magnetic disk or an optical disk. In addition, the application of the photoresist to the blank mask in the mask process is performed by spin coating. The spin coating method is to set the target substrate on the spin coater, and the nozzle is sprayed at a high speed after the photoresist is dropped from the nozzle of the photoresist coating device to the surface of the photoresist coating device, thereby diffusing and coating the photoresist liquid. .

光阻液若處在靜止狀態會有產生凝膠狀之不溶解物的情況。當將產生有凝膠化不溶解物之光阻液加以擴散塗佈之際,該凝膠化之不溶解物若附著於基板表面則會成為異物,而於成為微細構造物之基礎的光阻圖案產生缺陷。為了抑制凝膠狀不溶解物的產生,光阻液之循環過濾為有效做法。其例已知有一種光阻液供給裝置,其內組循環過濾裝置而使得光阻液循環於由玻璃等所成形之瓶狀的光阻液保管容器內(例如參見日本特開2014-63807號公報(專利文獻1))。 If the photoresist is in a static state, a gel-like insoluble matter may be generated. When the photoresist solution in which the gelled insoluble matter is produced is diffused and coated, the gelled insoluble matter adheres to the surface of the substrate to become a foreign matter, and the photoresist which is the basis of the fine structure is formed. The pattern creates defects. In order to suppress the generation of gelatinous insoluble matter, cyclic filtration of a photoresist liquid is effective. There is known a photoresist liquid supply device in which a circulation filter device is arranged to circulate a photoresist liquid in a bottle-shaped photoresist liquid storage container formed of glass or the like (for example, see JP-A-2014-63807 Bulletin (Patent Document 1)).

此專利文獻1所記載之光阻液供給裝置中,若瓶狀保管容器內之光阻液減少,則會於保管容器的上部產生空間。然後,進入此空間之空氣會使得殘留於保管容器內的光阻液氧化,而有感度變化的問題。 In the photoresist liquid supply device described in Patent Document 1, when the photoresist liquid in the bottle-shaped storage container is reduced, a space is generated in the upper portion of the storage container. Then, the air entering the space oxidizes the photoresist remaining in the storage container, and there is a problem that the sensitivity changes.

另一方面,光阻液之保管容器的形狀除了上述瓶形狀以外,尚有許多避免空氣滲入而以膜等成形之具有可撓性的袋狀物(例如參見國際公開第1989/07575號(專利文獻2))。再者,已揭示了一種裝置,係於袋狀的保管容器內插入1根的管子,從容器外導入光阻液以及從容器內排出光阻液,來使得保管容器內之光阻液做循環(例如參見日本特開平9-95565號公報(專利文獻3))。 On the other hand, in addition to the shape of the above-mentioned bottle, the shape of the storage container of the photoresist liquid has a plurality of flexible bags which are formed by a film or the like to prevent air from infiltrating (for example, see International Publication No. 1989/07575 (Patent Literature 2)). Further, a device has been disclosed in which a tube is inserted into a bag-shaped storage container, a photoresist is introduced from the outside of the container, and a photoresist is discharged from the container to circulate the photoresist in the storage container. (See, for example, Japanese Laid-Open Patent Publication No. Hei 9-95565 (Patent Document 3)).

先前技術文獻 Prior technical literature 先前專利文獻 Previous patent literature

專利文獻1:日本特開2014-63807號公報 Patent Document 1: Japanese Patent Laid-Open Publication No. 2014-63807

專利文獻2:國際公開第1989/07575號 Patent Document 2: International Publication No. 1989/07575

專利文獻3:日本特開平9-95565號公報 Patent Document 3: Japanese Patent Publication No. 9-95565

但是,上述專利文獻3所記載之裝置中,插入容器內之管子的前端位置受到固定。因此,光阻液總是從相同位置導入容器內,此外,總是從相同位置排出容器內的光阻液。從而,管子前端附近的光阻液雖可藉由移動來被攪拌,但離開管子前端之部位的光阻液則不移動而滯留。亦即,離開管子前端的部位無法充分攪拌光阻液,而會因暗反應產生光阻液的凝膠化,此為問題所在。 However, in the device described in the above Patent Document 3, the position of the tip end of the tube inserted into the container is fixed. Therefore, the photoresist liquid is always introduced into the container from the same position, and in addition, the photoresist liquid in the container is always discharged from the same position. Therefore, the photoresist liquid near the front end of the tube can be stirred by the movement, but the photoresist liquid leaving the front end of the tube does not move and stays. That is, the portion which leaves the front end of the tube cannot sufficiently agitate the photoresist, and the gelation of the photoresist is caused by the dark reaction, which is a problem.

此外,專利文獻3所記載的裝置由於管子為1根,故光阻液導入容器內之時無法將光阻液排出容器外,當光阻液排出容器外之時,光阻液無法導入容器內。亦即,容器內之光阻液的移動方向受限於導入方向或是排出方向的單一方向,無法高效率地攪拌光阻液,有發生光阻液凝膠化之虞。 Further, since the apparatus described in Patent Document 3 has one tube, the photoresist liquid cannot be discharged outside the container when the photoresist liquid is introduced into the container, and the photoresist liquid cannot be introduced into the container when the photoresist liquid is discharged outside the container. . That is, the moving direction of the photoresist in the container is limited to a single direction of the introduction direction or the discharge direction, and the photoresist cannot be stirred efficiently, and gelation of the photoresist occurs.

本發明乃為了解決如此之課題所得者,其目的在於提供一種於具有可撓性之光阻液的保管容器可使得容器內的光阻液高效率循環之光阻液保管 容器、光阻液供給裝置、光阻液塗佈裝置、光阻液保存裝置。此外,本發明之目的在於提供一種空白遮罩之製造方法。 The present invention has been made to solve such problems, and an object of the invention is to provide a photo-resistive liquid which can efficiently circulate a photoresist solution in a container in a storage container having a flexible photoresist liquid. A container, a photoresist supply device, a photoresist liquid coating device, and a photoresist liquid storage device. Further, it is an object of the present invention to provide a method of manufacturing a blank mask.

為了解決上述課題而採用例如申請專利範圍所記載之構成。本案發明相關之光阻液保管容器,係保管光微影所使用之光阻液;具有:可撓性之袋部,係具有貯存光阻液之收容部;注入管,係連通於收容部,對收容部注入光阻液;以及排出管,係連通於收容部,將貯存於收容部之光阻液排出於光阻液保管容器之外。 In order to solve the above problems, for example, the configuration described in the scope of the patent application is employed. The photoresist storage container related to the present invention is a photoresist liquid used for storing photolithography; and has a flexible bag portion having a storage portion for storing a photoresist liquid; and an injection tube connected to the housing portion. The photoresist is injected into the accommodating portion; and the discharge pipe is connected to the accommodating portion, and the photoresist liquid stored in the accommodating portion is discharged outside the photoresist storage container.

此外,本願發明相關之光阻液供給裝置,具有:光阻液保管容器(具有:可撓性之袋部,係具有貯存光微影所使用之光阻液的收容部;注入管,係連通於收容部,對收容部注入光阻液;以及排出管,係連通於收容部,將貯存於收容部之光阻液排出於光阻液保管容器之外);液槽,係以所充滿之調溫液來浸漬光阻液保管容器;調溫液循環機構,係使得充滿於液槽中的調溫液進行循環;溫度控制機構,係對於被充滿的調溫液之溫度進行控制;以及供給機構,係將光阻液保管容器內之光阻液供給於光阻液塗佈裝置。 Further, the photoresist liquid supply device according to the present invention has a photoresist storage container (having a flexible bag portion, a storage portion for storing a photoresist liquid used for lithography, and an injection tube for connecting In the accommodating portion, the photoresist is injected into the accommodating portion; and the discharge tube is connected to the accommodating portion, and the photoresist liquid stored in the accommodating portion is discharged outside the photoresist storage container); the liquid tank is filled with The temperature adjusting liquid is used to impregnate the photoresist liquid storage container; the temperature regulating liquid circulation mechanism is to circulate the temperature regulating liquid filled in the liquid tank; the temperature control mechanism controls the temperature of the filled temperature adjusting liquid; The mechanism supplies the photoresist liquid in the photoresist storage container to the photoresist liquid application device.

此外,本願發明相關之光阻液塗佈裝置,具有:光阻液保管容器(具有:可撓性之袋部,係具有貯存光微影所使用之光阻液的收容部;注入管,係連通於收容部,對收容部注入光阻液;以及排出管,係連通於收容部,將貯存於收容部之光阻液排出於光阻液保管容器之外);液槽,係以所充滿之調溫液來浸漬光阻液保管容器;調溫液循環機構,係使得充滿於液槽中的調溫液進行循環;溫度控制機構,係對於被充滿的調溫液之溫度進行控制;供給機構,係將光阻液保管容器內之光阻液供給於光阻液塗佈裝置;以及滴下噴嘴,係使得供給機構所供給之光阻液滴下至基板表面。 Further, the photoresist liquid-coating apparatus according to the present invention has a photoresist storage container (having a flexible bag portion, a housing portion for storing a photoresist liquid used for lithography, and an injection tube; Connected to the accommodating portion, the photoresist is injected into the accommodating portion; and the discharge tube is connected to the accommodating portion, and the photoresist liquid stored in the accommodating portion is discharged outside the photoresist storage container); the liquid tank is filled with The temperature adjusting liquid is used to impregnate the photoresist liquid storage container; the temperature regulating liquid circulating mechanism is to circulate the temperature regulating liquid filled in the liquid tank; the temperature control mechanism controls the temperature of the filled temperature adjusting liquid; The mechanism supplies the photoresist liquid in the photoresist storage container to the photoresist liquid application device; and the dropping nozzle causes the photoresist supplied from the supply mechanism to drop down to the surface of the substrate.

此外,本願發明之光阻液保存裝置,具有:光阻液保管容器(具有:可撓性之袋部,係具有貯存光微影所使用之光阻液的收容部;注入管,係連通於收容部,對收容部注入光阻液;以及排出管,係連通於收容部,將貯存於收容部之光阻液排出於光阻液保管容器之外);液槽,係以所充滿之調溫液來浸漬光阻液保管容器;調溫液循環機構,係使得充滿於液槽中的調溫液進行循環;以及溫度控制機構,係對於被充滿的調溫液之溫度進行控制。 Further, the photo-resistance liquid storage device of the present invention has a photoresist storage container (having a flexible bag portion, a storage portion for storing a photoresist liquid used for lithography, and an injection tube connected to each other) The accommodating portion injects the photoresist liquid into the accommodating portion; and the discharge tube communicates with the accommodating portion to discharge the photoresist liquid stored in the accommodating portion outside the photoresist liquid storage container; the liquid tank is filled with the liquid The warm liquid is used to impregnate the photoresist storage container; the temperature adjustment liquid circulation mechanism is to circulate the temperature adjustment liquid filled in the liquid tank; and the temperature control mechanism controls the temperature of the filled temperature adjustment liquid.

此外,本願發明相關之空白遮罩之製造方法,具有:於基板的一面形成圖案形成用薄膜之製程、以及使用光阻液塗佈裝置將光阻液塗佈於該薄膜之表面並固定之製程;具有下述步驟: Further, a method of manufacturing a blank mask according to the present invention has a process of forming a film for pattern formation on one surface of a substrate, and a process of applying a photoresist liquid to the surface of the film and fixing it using a photoresist liquid coating device. ; has the following steps:

將貯存光阻液之光阻液保管容器內的光阻液使用排出管與注入管來產生循環之步驟;使得浸漬光阻液保管容器之浴槽內的調溫液產生循環之步驟;將浴槽內之該調溫液之溫度控制在適合於光阻液塗佈的溫度之步驟;以及將適合於塗佈之溫度的光阻液供給於光阻液塗佈裝置之步驟。 a step of generating a circulation by using a discharge pipe and an injection pipe to form a photoresist in the photoresist liquid storage container for storing the photoresist; and circulating the temperature adjustment liquid in the bath of the immersion photoresist storage container; The temperature of the temperature regulating liquid is controlled at a temperature suitable for the temperature of the photoresist coating; and the step of supplying the photoresist suitable for the temperature of the coating to the photoresist coating device.

依據本發明相關之光阻液保管容器,可使得容器內所保管之光阻液高效率循環,可抑制光阻液的凝膠化。此外,依據本發明相關之光阻液保管容器,即便是保管著光阻液保管容器之容量以下之光阻液的情況,也可防止空氣等侵入容器內,也可有效抑制伴隨光阻液成分與氧等之暗反應所造成的感度變化。 According to the photoresist storage container according to the present invention, the photoresist liquid stored in the container can be efficiently circulated, and gelation of the photoresist can be suppressed. Further, according to the photoresist liquid storage container according to the present invention, even when the photoresist liquid having a capacity lower than the capacity of the photoresist storage container is stored, it is possible to prevent air or the like from entering the container, and it is also possible to effectively suppress the composition of the photoresist. Sensitivity changes caused by dark reactions with oxygen and the like.

此外,依據本發明相關之光阻液供給裝置,可在抑制被保管於光阻液保管容器內之光阻液的凝膠化的狀態下來將光阻液供給於光阻液塗佈裝置等。此外,依據本發明相關之光阻液供給裝置,由於空氣不會取代所供給之光阻液而進入光阻液保管容器內,也可有效抑制伴隨光阻液成分與氧等之暗反應所造成的光阻感度變化。 Further, according to the photoresist liquid supply device of the present invention, the photoresist can be supplied to the photoresist liquid application device or the like while suppressing gelation of the photoresist liquid stored in the photoresist storage container. Further, according to the photoresist liquid supply device of the present invention, since air does not enter the photoresist storage container in place of the supplied photoresist liquid, the dark reaction accompanying the composition of the photoresist and oxygen can be effectively suppressed. The sensitivity of the photoresist changes.

此外,依據本發明相關之光阻液塗佈裝置,可在抑制光阻液保管容器內所保管之光阻液的凝膠化之狀態下來將光阻液塗佈於基板等。從而,依據本發明相關之光阻液塗佈裝置,由於不會伴隨凝膠化而產生不溶解物,故前述不溶解物不會吐出於基板上,可形成異物少的光阻層。再者,依據本塗佈裝置,由於空氣不會進入光阻液保管容器內,而可抑制光阻液與氧等之暗反應。從而,本發明相關之光阻液塗佈裝置由於始終可將感度安定性優異之光阻液供給於基板上,故所形成之光阻層不會在各單片的基板上出現感度差異。 Further, according to the photoresist liquid coating apparatus of the present invention, the photoresist can be applied to the substrate or the like while suppressing gelation of the photoresist liquid stored in the photoresist storage container. Therefore, according to the photoresist liquid-coating apparatus according to the present invention, since the insoluble matter is not generated by the gelation, the insoluble matter is not discharged onto the substrate, and a photoresist layer having less foreign matter can be formed. Further, according to the coating apparatus, since the air does not enter the photoresist storage container, the dark reaction between the photoresist and oxygen can be suppressed. Therefore, since the photoresist liquid-coating apparatus according to the present invention can always supply a photoresist liquid excellent in sensitivity stability to the substrate, the formed photoresist layer does not exhibit sensitivity difference on each of the individual substrates.

此外,依據本發明相關之光阻液保存裝置,可在抑制於光阻液保管容器內所保管之光阻液的凝膠化之狀態下來保存光阻液。可防止空氣進入光阻液與保管容器之間,也可有效抑制伴隨暗反應所致光阻感度變化。 Further, according to the photoresist liquid storage device of the present invention, the photoresist can be stored in a state in which gelation of the photoresist liquid stored in the photoresist storage container is suppressed. It can prevent air from entering between the photoresist and the storage container, and can effectively suppress the change in the sensitivity of the photoresist accompanying the dark reaction.

此外,依據本發明相關之空白遮罩製造方法,由於可使用抑制了凝膠化之光阻液來製造空白遮罩,而可製造具有凝膠化不溶解物所致異物缺陷少的光阻層之空白遮罩。此外,依據本方法,由於可防止光阻液與空氣(氧)之接觸,而可製造具有各單片之感度變動少的光阻層之空白遮罩。 Further, according to the method of manufacturing a blank mask according to the present invention, since a blank mask can be produced by using a photoresist which suppresses gelation, a photoresist layer having less foreign matter defects due to gelation insoluble matter can be produced. Blank mask. Further, according to the method, since the contact between the photoresist and the air (oxygen) can be prevented, a blank mask having a photoresist layer having a small variation in sensitivity of each of the individual sheets can be manufactured.

1,11,11’,21‧‧‧光阻液保管容器 1,11,11’,21‧‧‧Solution liquid storage container

2‧‧‧袋部 2‧‧‧ bag department

2a‧‧‧收容部 2a‧‧‧Receiving Department

3‧‧‧環口構件 3‧‧‧ ring member

4‧‧‧保持構件 4‧‧‧Retaining components

8‧‧‧排出管 8‧‧‧Draining tube

9‧‧‧注入管 9‧‧‧Injection tube

80‧‧‧光阻液供給裝置(光阻液保存裝置) 80‧‧‧Photoresist supply device (photoresist storage device)

90‧‧‧光阻液塗佈裝置 90‧‧‧Photoresist coating device

40‧‧‧調溫液循環機構 40‧‧‧Temperature fluid circulation mechanism

50‧‧‧溫度控制機構 50‧‧‧ Temperature control mechanism

100‧‧‧空白遮罩 100‧‧‧ Blank mask

圖1係本發明之第1實施形態相關之光阻液保管容器之概略縱截面圖。 Fig. 1 is a schematic longitudinal cross-sectional view showing a photoresist storage container according to a first embodiment of the present invention.

圖2係本發明之第1實施形態相關之保持構件之前視圖。 Fig. 2 is a front view of a holding member according to a first embodiment of the present invention.

圖3係本發明之第2實施形態相關之光阻液保管容器之概略縱截面圖。 Fig. 3 is a schematic longitudinal cross-sectional view showing a photoresist storage container according to a second embodiment of the present invention.

圖4係用以說明光阻液保管容器之收容部之光阻液流動的說明圖。 Fig. 4 is an explanatory view for explaining the flow of the photoresist liquid in the accommodating portion of the photoresist liquid storage container.

圖5係用以說明本發明之第2實施形態相關之光阻液保管容器之收容部之光阻液流動之說明圖。 FIG. 5 is an explanatory view for explaining the flow of the photoresist liquid in the accommodating portion of the photoresist liquid storage container according to the second embodiment of the present invention.

圖6係本發明之第3實施形態相關之光阻液保管容器之概略縱截面圖。 Fig. 6 is a schematic longitudinal cross-sectional view showing a photoresist storage container according to a third embodiment of the present invention.

圖7係本發明之第3實施形態相關之注入管以及排出管之橫截面圖。 Fig. 7 is a cross-sectional view showing an injection pipe and a discharge pipe according to a third embodiment of the present invention.

圖8係用以說明本發明之第3實施形態相關之光阻液保管容器之收容部之光阻液流動之說明圖。 FIG. 8 is an explanatory view for explaining the flow of the photoresist liquid in the accommodating portion of the photoresist liquid storage container according to the third embodiment of the present invention.

圖9係顯示本發明相關之光阻液保存裝置、光阻液供給裝置以及光阻液塗佈裝置之構成的概略圖。 Fig. 9 is a schematic view showing the configuration of a photoresist liquid storage device, a photoresist liquid supply device, and a photoresist liquid application device according to the present invention.

圖10係顯示使用光阻液保管容器(採用具有可撓性之袋部)所進行之感度經時變化測試結果之圖。 Fig. 10 is a view showing the results of the sensitivity change test conducted by using a photoresist storage container (using a flexible bag portion).

圖11係本發明相關之空白遮罩製造方法之製程流程圖。 Figure 11 is a flow chart showing the process of the blank mask manufacturing method of the present invention.

圖12A係顯示製造相位轉移遮罩之一製程之截面示意圖。 Figure 12A is a schematic cross-sectional view showing one of the processes for fabricating a phase transfer mask.

圖12B係顯示製造相位轉移遮罩之一製程之截面示意圖。 Figure 12B is a schematic cross-sectional view showing one of the processes for fabricating a phase transfer mask.

圖12C係顯示製造相位轉移遮罩之一製程之截面示意圖。 Figure 12C is a schematic cross-sectional view showing one of the processes for fabricating a phase transfer mask.

圖12D係顯示製造相位轉移遮罩之一製程之截面示意圖。 Figure 12D is a schematic cross-sectional view showing one of the processes for fabricating a phase transfer mask.

圖12E係顯示製造相位轉移遮罩之一製程之截面示意圖。 Figure 12E is a schematic cross-sectional view showing one of the processes for fabricating a phase transfer mask.

圖12F係顯示製造相位轉移遮罩之一製程之截面示意圖。 Figure 12F is a schematic cross-sectional view showing one of the processes for fabricating a phase transfer mask.

以下,參見圖式說明用以實施本發明之形態。 Hereinafter, the form for carrying out the invention will be described with reference to the drawings.

〔光阻液保管容器之第1實施形態〕 [First Embodiment of Photoreceptor Storage Container]

圖1係本發明之第1實施形態相關之光阻液保管容器1之概略縱截面圖,圖2係本發明之第1實施形態相關之保持構件4之前視圖。 1 is a schematic longitudinal cross-sectional view of a photoresist storage container 1 according to a first embodiment of the present invention, and FIG. 2 is a front view of a holding member 4 according to a first embodiment of the present invention.

<全體構成> <All composition>

本實施形態相關之光阻液保管容器1具有:袋部2,係具有貯存光阻液之收容部2a;環口構件3,係設置於袋部2,具有連通於收容部2a之開口部3a;以及保持構件4,係和環口構件3成為嵌合。 The photoresist storage container 1 according to the present embodiment includes a bag portion 2 having a storage portion 2a for storing a photoresist liquid, and a ring member 3 provided in the bag portion 2 and having an opening portion 3a communicating with the housing portion 2a. And the holding member 4 and the ring member 3 are fitted.

<袋部> <bag department>

袋部2係藉由使得膜彼此以對向方式重疊而將其四邊予以熱密封來形成內部貯存光阻液的收容部2a。袋部2係形成為矩形的扁平形狀。此外,收納部2a之角落部係形成為弧狀使得光阻液不易殘留於角落部。此外,本實施形態中雖使得膜彼此對向而將四邊做熱密封,但不限定於此。再者,也可於膜的底部形成折角。此外,為了提高光阻液之使用效率也可使得袋的底邊朝向底方向形成為凸的曲線狀或錐面狀。 The bag portion 2 forms a housing portion 2a for storing the photoresist liquid internally by heat-sealing the four sides of the film in such a manner as to overlap each other. The pocket portion 2 is formed in a rectangular flat shape. Further, the corner portion of the accommodating portion 2a is formed in an arc shape so that the photoresist liquid does not easily remain in the corner portion. Further, in the present embodiment, although the films are opposed to each other and the four sides are heat-sealed, the present invention is not limited thereto. Further, a chamfer may be formed at the bottom of the film. Further, in order to increase the efficiency of use of the photoresist, the bottom edge of the bag may be formed into a convex curved shape or a tapered shape toward the bottom direction.

膜的材質可使用例如聚乙烯、聚丙烯等烴系聚合物片。在膜的構造方面除了單層膜以外也可使用多層膜。例如,可另外設置用以遮斷氧、水蒸氣等氣體之高氣密性膜或具有遮光性之機能性膜。 As the material of the film, for example, a hydrocarbon-based polymer sheet such as polyethylene or polypropylene can be used. A multilayer film can be used in addition to a single layer film in terms of the construction of the film. For example, a highly airtight film or a functional film having a light blocking property for blocking a gas such as oxygen or water vapor may be separately provided.

<環口構件> <ring member>

做為卡合保持部的環口構件3為具有開口部3a(來和袋部2之收容部2a相連通)之圓筒狀構件。環口構件3之開口部3a當環口構件3與保持構件4相嵌合之際會和保持構件4之卡合部4b做卡合。環口構件3如圖1所示般係熱熔接於袋部2之上部的膜處。 The ring-shaped member 3 as the engagement holding portion is a cylindrical member having an opening 3a (which communicates with the accommodating portion 2a of the bag portion 2). The opening portion 3a of the ring member 3 is engaged with the engaging portion 4b of the holding member 4 when the ring member 3 is fitted to the holding member 4. The ring member 3 is thermally welded to the film at the upper portion of the bag portion 2 as shown in FIG.

環口構件3較佳為以射出成形法來製造。所使用的樹脂只要是可做射出成形的樹脂即可並無特別限定,但通常以高溫時仍具剛性而低溫時不易脆化之高密度聚乙烯為佳。 The ring member 3 is preferably manufactured by an injection molding method. The resin to be used is not particularly limited as long as it can be injection-molded. However, it is usually a high-density polyethylene which is rigid at a high temperature and is not easily embrittled at a low temperature.

<保持構件> <holding member>

保持構件4係由頭部4a(與環口構件3成為嵌合之際係突出於袋部2之外)與卡合部4b(插入於環口構件3之開口部3a,其前端位於袋部2之收容 部2a)所構成。如圖1所示般,環口構件3之開口部3a與保持構件4之卡合部4b相卡合,保持構件4被嵌合於環口構件3。 The holding member 4 is formed by the head portion 4a (outer than the bag portion 2 when the ring mouth member 3 is fitted) and the engaging portion 4b (inserted into the opening portion 3a of the ring mouth member 3, the front end of which is located in the pocket portion 2 containment Part 2a). As shown in FIG. 1, the opening 3a of the ring member 3 is engaged with the engaging portion 4b of the holding member 4, and the holding member 4 is fitted to the ring member 3.

如圖2所示般,保持構件4之頭部4a形成為圓筒狀,於頭部4a之上面4c的中央附近形成有用以插入排出管8的排出管孔8a。排出管孔8a係以軸向貫通保持構件4的方式來形成。此外,排出管孔8a之孔徑係以略小於排出管8之外徑的方式來形成。藉此,可將插入排出管孔8a之排出管8保持在既定位置,即便是排出管8安裝於保持構件4之狀態,光阻液保管容器1之內部也可保持在液密狀態。 As shown in Fig. 2, the head portion 4a of the holding member 4 is formed in a cylindrical shape, and a discharge pipe hole 8a for inserting the discharge pipe 8 is formed in the vicinity of the center of the upper surface 4c of the head portion 4a. The discharge pipe hole 8a is formed to penetrate the holding member 4 in the axial direction. Further, the diameter of the discharge pipe hole 8a is formed to be slightly smaller than the outer diameter of the discharge pipe 8. Thereby, the discharge pipe 8 inserted into the discharge pipe hole 8a can be held at a predetermined position, and even if the discharge pipe 8 is attached to the holding member 4, the inside of the photoresist liquid storage container 1 can be kept in a liquid-tight state.

於保持構件4之頭部4a的側周面4d形成有用以插入注入管9的注入管孔9a。注入管孔9a係以朝和保持構件4之軸向成為垂直之方向來延伸的方式所形成。此外,注入管孔9a之孔徑係以略小於注入管9之外徑的方式來形成。藉此,插入於注入管孔9a之注入管9可保持在既定位置,即便注入管9為安裝於保持構件4之狀態,也可將光阻液保管容器1之內部保持在液密狀態。 An injection pipe hole 9a for inserting the injection pipe 9 is formed in the side peripheral surface 4d of the head portion 4a of the holding member 4. The injection pipe hole 9a is formed to extend in a direction perpendicular to the axial direction of the holding member 4. Further, the aperture of the injection tube hole 9a is formed to be slightly smaller than the outer diameter of the injection tube 9. Thereby, the injection pipe 9 inserted into the injection pipe hole 9a can be held at a predetermined position, and even if the injection pipe 9 is attached to the holding member 4, the inside of the photoresist storage container 1 can be kept in a liquid-tight state.

保持構件4之卡合部4b係連接於頭部4a之下部,形成為具有較頭部4a之直徑來得略小之直徑的圓筒狀。卡合部4b之外徑係形成較環口構件3之開口部3a之直徑來得略大。藉此,將保持構件4與環口構件3加以嵌合之際,可將光阻液保管容器1之內部加以液密保持。此外,也可在卡合部4b與環口構件3之間配置O型環來提高液密性。此外,於保持構件4之頭部4a與卡合部4b之間形成有段差4e。藉由使得此段差4e卡固於環口構件3之開口部3a的緣部,則使得保持構件4與環口構件3做嵌合之際,可防止保持構件4超過所需程度地壓入環口構件3。 The engaging portion 4b of the holding member 4 is connected to the lower portion of the head portion 4a, and is formed in a cylindrical shape having a diameter slightly smaller than the diameter of the head portion 4a. The outer diameter of the engaging portion 4b is formed to be slightly larger than the diameter of the opening portion 3a of the ring-shaped member 3. Thereby, when the holding member 4 and the ring member 3 are fitted, the inside of the photoresist storage container 1 can be liquid-tightly held. Further, an O-ring may be disposed between the engaging portion 4b and the ring member 3 to improve liquid tightness. Further, a step 4e is formed between the head portion 4a of the holding member 4 and the engaging portion 4b. By causing the step 4e to be fastened to the edge of the opening portion 3a of the ring-shaped member 3, when the holding member 4 and the ring-shaped member 3 are fitted, the holding member 4 can be prevented from being pressed into the ring more than necessary. Port member 3.

於保持構件4之內部形成有圓筒形狀之空間部5。空間部5之下方係和收容部2a相連通,空間部5之上方係和排出管孔8a以及注入管孔9a相連通。此外,空間部5之直徑係形成為大於排出管8之外徑。藉此,即使排出管8安裝於保持構件4之狀態,仍可於排出管8與保持構件4之內壁之間確保流動光阻液之間隙。 A cylindrical space portion 5 is formed inside the holding member 4. The lower portion of the space portion 5 communicates with the accommodating portion 2a, and the upper portion of the space portion 5 communicates with the discharge tube hole 8a and the injection tube hole 9a. Further, the diameter of the space portion 5 is formed to be larger than the outer diameter of the discharge pipe 8. Thereby, even if the discharge pipe 8 is attached to the holding member 4, the gap of the flowing photoresist can be ensured between the discharge pipe 8 and the inner wall of the holding member 4.

保持構件4較佳為以射出成形法來製造。所使用的樹脂只要是可進行射出成形之樹脂則無特別限定,通常以即使是高溫時仍具剛性、於低溫時不易脆化之高密度聚乙烯為佳。 The holding member 4 is preferably manufactured by injection molding. The resin to be used is not particularly limited as long as it is a resin that can be injection-molded, and is generally preferably a high-density polyethylene which is rigid even at a high temperature and is not easily embrittled at a low temperature.

如圖1所示般,於保持構件4之頭部4a的上面4c所形成之排出管孔8a係朝保持構件4之軸向插入有排出管8。排出管8係以細的管子所構成,於排出管8之前端部形成有錐面部8b。藉由於前端形成錐面部8b,即使排出管8之前端位於袋部2之底部附近的情況,也可將殘留於收容部2a底部附近的光阻液加以排出。排出管8之另一端係連接於後述的泵31。 As shown in Fig. 1, the discharge pipe 8a formed in the upper surface 4c of the head portion 4a of the holding member 4 is inserted into the discharge pipe 8 in the axial direction of the holding member 4. The discharge pipe 8 is formed of a thin pipe, and a tapered surface portion 8b is formed at an end portion of the discharge pipe 8. By forming the tapered surface portion 8b at the distal end, even if the front end of the discharge tube 8 is located near the bottom of the bag portion 2, the photoresist liquid remaining in the vicinity of the bottom portion of the accommodating portion 2a can be discharged. The other end of the discharge pipe 8 is connected to a pump 31 which will be described later.

於保持構件4之側周面4d所形成之注入管孔9a,在和保持構件4之軸向成為垂直的方向上插入有注入管9。注入管9係由細管子所構成,以注入管9之前端位於空間部5之前側的方式受到配置。亦即,注入管9並非和空間部5內所具有的排出管8作接觸,而是連通於保持構件之空間部5、亦即連通於在排出管8與保持構件4之內壁之間所形成之空間。注入管9之另一端係連接於後述泵31。 The injection pipe hole 9a formed in the side peripheral surface 4d of the holding member 4 is inserted into the injection pipe 9 in a direction perpendicular to the axial direction of the holding member 4. The injection pipe 9 is composed of a thin pipe, and is disposed such that the front end of the injection pipe 9 is located on the front side of the space portion 5. That is, the injection pipe 9 is not in contact with the discharge pipe 8 provided in the space portion 5, but is communicated with the space portion 5 of the holding member, that is, between the discharge pipe 8 and the inner wall of the holding member 4. The space formed. The other end of the injection pipe 9 is connected to a pump 31 to be described later.

本實施形態,藉由使得安裝於保持構件4之排出管8之插入方向和注入管9之插入方向成為不同,而無須使得排出管8與注入管9成為雙重管構造。藉此,可簡化光阻液保管容器1之構造。 In the present embodiment, the insertion direction of the discharge pipe 8 attached to the holding member 4 and the insertion direction of the injection pipe 9 are different, and the discharge pipe 8 and the injection pipe 9 do not need to have a double pipe structure. Thereby, the structure of the photoresist liquid storage container 1 can be simplified.

排出管8以及注入管9之材質通常以即使在高溫時仍具剛性、而低溫時不易脆化之高密度聚乙烯為佳。此外,藉由將排出管8之前端加以斜向切斷來形成錐面部8b。 The material of the discharge pipe 8 and the injection pipe 9 is usually a high-density polyethylene which is rigid even at a high temperature and is not easily embrittled at a low temperature. Further, the tapered surface portion 8b is formed by obliquely cutting the front end of the discharge pipe 8.

此外,也可在保持構件4之頭部4a的上面4c形成傾斜部。藉此,當利用槓桿等器具進行嵌合保持構件4與環口構件3之作業的情況,可使得器具之一部分釋放至傾斜部上方所形成的空間部分。 Further, an inclined portion may be formed on the upper surface 4c of the head portion 4a of the holding member 4. Thereby, when the work of fitting the holding member 4 and the ring mouth member 3 is performed by means of a lever or the like, one part of the instrument can be released to the space portion formed above the inclined portion.

<光阻液保管容器之組裝> <Assembly of Photoreceptor Storage Container>

首先,在保持構件4從環口構件3移除的狀態下,從環口構件3之開口部3a注入光阻液,於袋部2之收容部2a貯存光阻液。當不立即使用光阻液保管容器1之情況,以對環口構件3之開口部3a加栓的狀態進行保管。所注入之光阻液除了通常的光阻液也可使用高感度光阻液,尤其是化學增幅型光阻液。本實施形態之光阻液保管容器1由於具備有空氣不會進入收 容部2a內之可撓性的袋部2,而也可保管容易因空氣而氧化的化學增幅型光阻液。 First, in a state where the holding member 4 is removed from the ring mouth member 3, the photoresist liquid is injected from the opening portion 3a of the ring mouth member 3, and the photoresist liquid is stored in the housing portion 2a of the bag portion 2. When the photoresist storage container 1 is not used immediately, the opening 3a of the ring member 3 is stored in a state of being plugged. In addition to the usual photoresist solution, the injected photoresist can also be used with high-sensitivity photoresist, especially chemically amplified photoresist. The photoresist liquid storage container 1 of the present embodiment does not enter the air due to the presence of air. The flexible bag portion 2 in the container portion 2a can also store a chemically amplified resist liquid which is easily oxidized by air.

使用光阻液保管容器1之情況,係移除開口部3a的栓,將安裝著排出管8以及注入管9的保持構件4嵌合至環口構件3。此時,排出管8之前端從開口部3a插入收容部2a內,其次,將保持構件4之卡合部4b卡合於環口構件3之開口部3a,來組設光阻液保管容器1。此時,排出管8係以排出管8之前端位於袋部2之底部附近的方式裝設於保持構件4。此外,也可使得排出管8之一部分彎曲來和保持構件4之排出管孔8a的緣部做卡固,以規定收容部2a之排出管8之前端位置。藉此,可防止因過深插入排出管8之前端造成袋部2之損傷或是過淺插入排出管8之前端造成收容部2a內之光阻液的殘存。 When the container 1 is stored in the photoresist, the plug of the opening 3a is removed, and the holding member 4 to which the discharge pipe 8 and the injection pipe 9 are attached is fitted to the ring member 3. At this time, the front end of the discharge pipe 8 is inserted into the accommodating portion 2a from the opening 3a, and then the engaging portion 4b of the holding member 4 is engaged with the opening portion 3a of the ring member 3 to form the photoresist liquid storage container 1 . At this time, the discharge pipe 8 is attached to the holding member 4 such that the front end of the discharge pipe 8 is located near the bottom of the bag portion 2. Further, one portion of the discharge pipe 8 may be bent to be engaged with the edge of the discharge pipe hole 8a of the holding member 4 to define the position of the front end of the discharge pipe 8 of the accommodating portion 2a. Thereby, it is possible to prevent the residual of the photoresist liquid in the accommodating portion 2a caused by the damage of the bag portion 2 caused by the deep insertion into the discharge tube 8 or the shallow insertion into the front end of the discharge tube 8.

如圖1般將組裝好的光阻液保管容器1安置於後述光阻液供給裝置、光阻液塗佈裝置以及光阻液保存裝置。 As shown in FIG. 1, the assembled photoresist liquid storage container 1 is placed in a photoresist liquid supply device, a photoresist liquid application device, and a photoresist liquid storage device, which will be described later.

當使得貯存於收容部2a的光阻液進行循環之情況,係從注入管9之前端吐出光阻液。從注入管9之前端所吐出的光阻液通過保持構件4所形成之空間部5而往袋部2之收容部2a移動。然後,從排出管8之前端被吸入排出管8之內部而往光阻液保管容器1之外部被排出。如此般,伴隨從注入管9所注入之光阻液再從排出管8排出於收容容器1之外此種光阻液的移動,貯存於收容部2a的光阻液受到攪拌。如此般,藉由使用本實施形態之光阻液保管容器1,由於光阻液不會滯留於收容部2a內,可抑制因暗反應所致光阻液的凝膠化。 When the photoresist liquid stored in the accommodating portion 2a is circulated, the photoresist liquid is discharged from the front end of the injection tube 9. The photoresist discharged from the front end of the injection tube 9 is moved to the housing portion 2a of the bag portion 2 through the space portion 5 formed by the holding member 4. Then, the front end of the discharge pipe 8 is sucked into the discharge pipe 8 and discharged to the outside of the photoresist liquid storage container 1. In this manner, the photoresist liquid stored in the accommodating portion 2a is agitated with the movement of the photoresist liquid discharged from the injection tube 9 and discharged from the discharge tube 8 to the storage container 1. By using the photoresist liquid storage container 1 of the present embodiment, since the photoresist liquid does not remain in the accommodating portion 2a, gelation of the photoresist liquid due to the dark reaction can be suppressed.

〔光阻液保管容器之第2實施形態〕 [Second Embodiment of Photoreceptor Storage Container]

其次,針對本發明之第2實施形態相關之光阻液保管容器11來說明。本實施形態之光阻液保管容器11,裝設於保持構件4之排出管8以及注入管9之配置有別於第1實施形態。針對本實施形態之光阻液保管容器之11全體之構成由於和第1實施形態同樣故省略說明,此外,圖3中和圖1對應之部分係賦予同一符號而省略重複說明。 Next, the photoresist liquid storage container 11 according to the second embodiment of the present invention will be described. The arrangement of the photoresist liquid storage container 11 of the present embodiment in the discharge pipe 8 and the injection pipe 9 of the holding member 4 is different from that of the first embodiment. The configuration of the whole of the photo-resistance storage container 11 of the present embodiment is the same as that of the first embodiment, and the description of the same reference numerals will be given to the parts in FIG.

圖3係本發明之第2實施形態相關之光阻液保管容器11之概略縱截面圖。圖4以及圖5係用以說明光阻液保管容器11之收容部2a中的光阻液之流動的說明圖。 Fig. 3 is a schematic longitudinal cross-sectional view showing a photoresist storage container 11 according to a second embodiment of the present invention. 4 and 5 are explanatory views for explaining the flow of the photoresist liquid in the accommodating portion 2a of the photoresist liquid storage container 11.

如圖3所示般,於保持構件4,排出管8與注入管9係於保持構件4之軸向上平行地裝設著。裝設於保持構件4之排出管8與注入管9之前端係以位於收容部2a內的方式受到配置。於本實施形態之保持構件4之頭部4a的上面4c形成有排出管孔8a與注入管孔9a,排出管孔8a以及注入管孔9a係以軸向貫通保持構件4的方式來形成。 As shown in FIG. 3, in the holding member 4, the discharge pipe 8 and the injection pipe 9 are attached in parallel in the axial direction of the holding member 4. The discharge pipe 8 attached to the holding member 4 and the front end of the injection pipe 9 are disposed so as to be positioned inside the accommodating portion 2a. The discharge pipe hole 8a and the injection pipe hole 9a are formed in the upper surface 4c of the head portion 4a of the holding member 4 of the present embodiment, and the discharge pipe hole 8a and the injection pipe hole 9a are formed so as to penetrate the holding member 4 in the axial direction.

與上述第1實施形態相異之處在於,本實施形態中,注入管9之前端也以位於收容部2a內的方式受到配置。具體而言,注入管9之前端以成為環口構件3之開口部3a附近的方式受到配置。和第1實施形態同樣,被插入收容部2a內的排出管8之前端位置係以位於收容部2a之底部附近的方式受到配置。從而,插入收容部2a內之注入管9之前端位置相較於排出管8之前端位置係位於上方而受到配置。 The difference from the above-described first embodiment is that in the present embodiment, the front end of the injection pipe 9 is also disposed so as to be positioned inside the accommodating portion 2a. Specifically, the front end of the injection pipe 9 is disposed so as to be in the vicinity of the opening portion 3a of the ring-shaped member 3. Similarly to the first embodiment, the position of the front end of the discharge pipe 8 inserted into the accommodating portion 2a is disposed so as to be located near the bottom of the accommodating portion 2a. Therefore, the position of the front end of the injection pipe 9 inserted into the accommodating portion 2a is disposed above the position of the front end of the discharge pipe 8 and is disposed above.

本實施形態中,於收容部2a內,以注入管9之前端位置為上方,使得排出管8之前端位置與注入管9之前端位置在上下方向上分離。藉此,從注入管9之前端所注入之光阻液移動至排出管8之前端為止的移動距離變長,可確實攪拌收容部2a內之光阻液。此外,若使得注入管9之前端位置位於上方,由於從注入管9所注入之光阻液的移動可利用重力來順利地進行,而可確實攪拌收容部2a內之光阻液。 In the present embodiment, in the accommodating portion 2a, the position of the front end of the injection pipe 9 is upward, so that the position of the front end of the discharge pipe 8 is separated from the position of the front end of the injection pipe 9 in the vertical direction. Thereby, the moving distance from the photoresist liquid injected from the front end of the injection pipe 9 to the front end of the discharge pipe 8 becomes long, and the photoresist liquid in the accommodating portion 2a can be surely stirred. Further, when the position of the front end of the injection pipe 9 is located above, the movement of the photoresist liquid injected from the injection pipe 9 can be smoothly performed by gravity, and the photoresist liquid in the accommodating portion 2a can be surely stirred.

本實施形態中,當使得貯存於收容部2a之光阻液作循環之情況,係從注入管9之前端將光阻液直接注入袋部2之收容部2a內,從排出管8之前端將光阻液排出至容器11之外。本實施形態中,由於伴隨此光阻液的移動使得收容部2a內之光阻液受到攪拌,可抑制暗反應所致光阻液之凝膠化。 In the present embodiment, when the photoresist liquid stored in the accommodating portion 2a is circulated, the photoresist liquid is directly injected into the accommodating portion 2a of the bag portion 2 from the front end of the injection tube 9, and the front end of the discharge tube 8 is The photoresist is discharged to the outside of the container 11. In the present embodiment, the photoresist liquid in the accommodating portion 2a is agitated by the movement of the photoresist liquid, and gelation of the photoresist liquid due to the dark reaction can be suppressed.

圖4係顯示排出管8與注入管9之前端位置在收容部2a內配置於相同高度之情況的實施形態圖。此實施形態之光阻液保管容器11’,排出管8與注入管9之前端係配置於收容部2a之底部附近。此外,此圖中顯示伴隨收容部2a內之光阻液的減少,收容部2a內的空氣往容器外排出造成可撓性之袋部2萎縮,光阻液可於收容部2a內做移動之空間變少的狀態。當光阻液 可移動之空間變少,則排出管8之前端附近的光阻液與注入管9之前端附近的光阻液被隔離,於收容部2a之內部產生所謂的積液Q。若如此般產生積液Q,會發生無法使得收容部2a內之光阻液進行循環之情況。 Fig. 4 is a view showing an embodiment in which the discharge pipe 8 and the position of the front end of the injection pipe 9 are disposed at the same height in the accommodating portion 2a. In the photoresist storage container 11' of this embodiment, the discharge pipe 8 and the front end of the injection pipe 9 are disposed near the bottom of the accommodating portion 2a. Further, in the figure, the amount of the photoresist in the accommodating portion 2a is reduced, and the air in the accommodating portion 2a is discharged outside the container to cause the flexible bag portion 2 to atrophy, and the photoresist can be moved in the accommodating portion 2a. A state in which space is reduced. When the photoresist When the movable space is small, the photoresist liquid near the front end of the discharge pipe 8 is isolated from the photoresist liquid near the front end of the injection pipe 9, and a so-called effusion Q is generated inside the accommodating portion 2a. If the effusion Q is generated in this manner, the photoresist liquid in the accommodating portion 2a cannot be circulated.

圖5係用以說明圖3所示光阻液保管容器11中,收容部2a內之光阻液殘量變少之情況的光阻液之循環之圖。 Fig. 5 is a view for explaining the circulation of the photoresist liquid in the case where the residual amount of the photoresist in the accommodating portion 2a is reduced in the resist liquid storage container 11 shown in Fig. 3 .

如圖5所示般,因著可撓性之袋部2萎縮造成光阻液可移動之空間變少,故於注入管9之前端附近產生積液Q。但是,本實施形態中,積液Q之端可藉由接觸於排出管8之外周面而被排出管8所引導並利用重力而到達排出管8之前端。到達排出管8之前端的光阻液被排出於容器11之外。如此般,藉由使用本實施形態之光阻液保管容器11,即使收容部2a內之光阻液變少成為容易產生積液Q的狀態,也可確實地讓收容部2a內之光阻液進行循環。藉此,可抑制暗反應所致光阻液之凝膠化。 As shown in Fig. 5, since the space in which the resist liquid can move due to the shrinkage of the flexible bag portion 2 is reduced, the liquid accumulation Q is generated in the vicinity of the front end of the injection tube 9. However, in the present embodiment, the end of the effusion Q can be guided by the discharge pipe 8 by contact with the outer peripheral surface of the discharge pipe 8, and reaches the front end of the discharge pipe 8 by gravity. The photoresist liquid reaching the front end of the discharge pipe 8 is discharged outside the container 11. By using the photoresist liquid storage container 11 of the present embodiment, even if the photoresist liquid in the accommodating portion 2a is reduced to a state in which the liquid accumulation Q is likely to occur, the photoresist liquid in the accommodating portion 2a can be surely made. Loop. Thereby, gelation of the photoresist liquid caused by the dark reaction can be suppressed.

〔光阻液保管容器之第3實施形態〕 [Third Embodiment of Photoreceptor Storage Container]

其次,針對本發明之第3實施形態相關之光阻液保管容器21來說明。本實施形態之光阻液保管容器21在裝設於保持構件4之排出管8以及注入管9之配置上有別於第1實施形態而具備雙重管構造。關於本實施形態之光阻液保管容器21之全體之構成由於和第1實施形態同樣故省略說明,此外,圖6中對應於圖1之部分係賦予同一符號而省略重複說明。 Next, the photoresist storage container 21 according to the third embodiment of the present invention will be described. The arrangement of the discharge liquid storage container 21 of the present embodiment in the discharge pipe 8 and the injection pipe 9 provided in the holding member 4 is different from that of the first embodiment, and has a double pipe structure. The entire configuration of the photoresist liquid storage container 21 of the present embodiment is omitted as described in the first embodiment, and the same reference numerals are given to the portions in FIG.

圖6係本發明之第3實施形態相關之光阻液保管容器21之概略縱截面圖。圖7係圖6之A-A線所示排出管8以及注入管9之橫截面圖,圖8係用以說明光阻液保管容器21之收容部2a之光阻液流動的說明圖。 Fig. 6 is a schematic longitudinal cross-sectional view showing a photoresist storage container 21 according to a third embodiment of the present invention. Fig. 7 is a cross-sectional view showing the discharge pipe 8 and the injection pipe 9 shown in line A-A of Fig. 6, and Fig. 8 is an explanatory view for explaining the flow of the photoresist liquid in the accommodating portion 2a of the photoresist liquid storage container 21.

如圖6所示般,本實施形態之光阻液保管容器21具有注入管9之直徑大於排出管8之直徑、於注入管9之內側配置著排出管8之所謂的雙重管構造。形成雙重管構造之排出管8與注入管9係插入至於保持構件4之頭部4a的上面4c所形成之貫通孔9b中。貫通孔9b係以具有較注入管9之外徑略小直徑的方式來形成,以軸向貫通保持構件4的方式來形成。 As shown in Fig. 6, the photoresist storage container 21 of the present embodiment has a so-called double tube structure in which the diameter of the injection tube 9 is larger than the diameter of the discharge tube 8, and the discharge tube 8 is disposed inside the injection tube 9. The discharge pipe 8 and the injection pipe 9 forming the double pipe structure are inserted into the through holes 9b formed in the upper surface 4c of the head portion 4a of the holding member 4. The through hole 9b is formed to have a diameter slightly smaller than the outer diameter of the injection pipe 9, and is formed to penetrate the holding member 4 in the axial direction.

如圖7所示般,形成雙重管構造之排出管8與注入管9具有共通的同心軸,於排出管8之外周面與注入管9之內周面之間形成有空間部10而可讓從注入管9所注入之光阻液通過。 As shown in Fig. 7, the discharge pipe 8 having the double pipe structure and the injection pipe 9 have a common concentric shaft, and a space portion 10 is formed between the outer circumferential surface of the discharge pipe 8 and the inner circumferential surface of the injection pipe 9 to allow The photoresist liquid injected from the injection tube 9 passes.

此外,插入收容部2a內之排出管8之前端位置係以位於收容部2a之底部附近的方式受到配置,插入收容部2a內之注入管9之前端位置係以相較於排出管8之前端位置位於更上方的方式受到配置。具體而言,注入管9之前端係以從環口構件3之開口部3a突出而位於收容部2a內的方式受到配置。此外,注入管9之前端位置也可在保持構件4之貫通孔9b內。 Further, the position of the front end of the discharge pipe 8 inserted into the accommodating portion 2a is disposed so as to be located near the bottom of the accommodating portion 2a, and the position of the front end of the injection pipe 9 inserted into the accommodating portion 2a is compared with the front end of the discharge pipe 8. The way the location is above is configured. Specifically, the front end of the injection pipe 9 is disposed so as to protrude from the opening portion 3a of the ring member 3 and to be positioned in the accommodating portion 2a. Further, the position of the front end of the injection pipe 9 may be in the through hole 9b of the holding member 4.

圖8係用以說明圖6所示光阻液保管容器1中,當收容部2a內之光阻液殘量變少之情況的光阻液循環之圖。 Fig. 8 is a view for explaining the circulation of the photoresist in the case where the residual amount of the photoresist in the accommodating portion 2a is reduced in the resist liquid storage container 1 shown in Fig. 6.

如圖8所示般,當收容部2a內之光阻液殘量變少之情況,從注入管9之前端所注入之光阻液會沿著在雙重管構造之內側所配置之排出管8之外周面而到達排出管8之前端附近。亦即,於注入管9之前端附近不會產生積液。到達了排出管8之前端的光阻液會藉由排出管8而排出於保管容器21之外。如此般,本實施形態之光阻液保管容器21,即使收容部2a內之光阻液殘量變少而成為收容部2a內容易產生積液之狀態的情況,在注入管9之前端附近並不會產生積液,而可在收容部2a內使得光阻液進行循環。藉此,可抑制暗反應所致光阻液之凝膠化。 As shown in FIG. 8, when the residual amount of the photoresist in the accommodating portion 2a is small, the photoresist liquid injected from the front end of the injection tube 9 is along the discharge tube 8 disposed inside the double tube structure. The outer peripheral surface reaches the vicinity of the front end of the discharge pipe 8. That is, no liquid is generated near the front end of the injection tube 9. The photoresist liquid that has reached the front end of the discharge pipe 8 is discharged outside the storage container 21 by the discharge pipe 8. In the photoresist liquid storage container 21 of the present embodiment, even if the amount of photoresist remaining in the accommodating portion 2a is small, the liquid accommodating portion 2a is likely to be in a state in which liquid accumulation is likely to occur, and the vicinity of the front end of the injection tube 9 is not The liquid is generated, and the photoresist can be circulated in the accommodating portion 2a. Thereby, gelation of the photoresist liquid caused by the dark reaction can be suppressed.

如上述般,本發明之光阻液保管容器不論是何種實施形態均具有由膜所構成之具可撓性的袋部2。 As described above, the photoresist storage container of the present invention has a flexible bag portion 2 composed of a film, regardless of the embodiment.

以下,藉由感度經時變化測試來實施關於使用了具可撓性之袋部的光阻液保管容器與使用了不具可撓性之瓶做為袋部之光阻液保管容器的比較。 In the following, a comparison was made between the photoresist storage container using the flexible bag portion and the photoresist storage container using the non-flexible bottle as the bag portion by the sensitivity change test.

<感度經時變化測試> <sensitivity change test> 〔實施例1〕 [Example 1]

使用由膜所構成而具可撓性之袋部來製作光阻液保管容器。 A resist liquid storage container is produced by using a bag portion made of a film and having flexibility.

〔比較例1〕 [Comparative Example 1]

袋部係使用不具可撓性之玻璃製瓶來製作光阻液保管容器。 The bag portion is made of a glass bottle which is not flexible, and a photoresist liquid storage container is produced.

將上述所製作出的光阻液保管容器保管於溫度10度的環境下,從保管開始起於1週後、2週後、1個月後、2個月後、3個月後實施測試來進行評價。 The photoresist storage container prepared above was stored in an environment at a temperature of 10 degrees, and the test was performed one week later, two weeks later, one month later, two months later, and three months later from the start of storage. Conduct an evaluation.

評價係使用被保管於光阻液保管容器之光阻液,於基板上形成光阻層,測量CDU(Critical Dimension Uniformity)來進行感度評價,其結果顯示於圖10。 In the evaluation, the photoresist layer stored in the photoresist storage container was used to form a photoresist layer on the substrate, and the CDU (Critical Dimension Uniformity) was measured to evaluate the sensitivity. The result is shown in FIG.

此外,評價所使用之光阻層,在光阻液方面係使用化學增幅型正光阻(富士膜電子材料公司製PRL009S),以曝光前烘烤:190度、60秒膜壓、膜厚120nm之條件來形成。 In addition, in the photoresist layer used for the evaluation, a chemically amplified positive photoresist (PRL009S manufactured by Fujifilm Electronic Materials Co., Ltd.) was used for the photoresist, and pre-exposure baking was performed: 190 degrees, 60 seconds, film thickness, and film thickness: 120 nm. Conditions are formed.

從圖10可明知,實施例1之光阻液保管容器相較於比較例1之光阻液保管容器可將CDU之值保持在高狀態。由此可知,如本實施形態之光阻液保管容器般藉由使用可撓性之袋部,可抑制保管中的光阻液接觸於空氣,可減少經時所致光阻液之感度惡化。 As is apparent from Fig. 10, the photoresist storage container of the first embodiment can maintain the value of the CDU in a higher state than the photoresist storage container of the comparative example 1. As described above, by using the flexible bag portion as in the photoresist liquid storage container of the present embodiment, it is possible to prevent the photoresist liquid during storage from coming into contact with the air, and it is possible to reduce the deterioration of the sensitivity of the photoresist liquid over time.

如上述般,本發明相關之光阻液保管容器不論是任一實施形態均使得貯存於收容部2a之光阻液產生循環。 As described above, in any of the embodiments, the photoresist liquid storage container according to the present invention causes the photoresist liquid stored in the accommodating portion 2a to be circulated.

以下,藉由異物測試來實施關於使得貯存於收容部之光阻液產生循環之光阻液保管容器與未使得貯存於收容部之光阻液產生循環之光阻液保管容器之比較。 Hereinafter, a comparison is made between the photoresist liquid storage container that causes the photoresist liquid stored in the housing portion to circulate, and the photoresist liquid storage container that does not cause the photoresist liquid stored in the housing portion to circulate by the foreign matter test.

<異物測試> <foreign object test> 〔實施例2〕 [Example 2]

將具有由膜所構成之袋部的光阻液保管容器使用於後述光阻液供給裝置,一邊進行循環過濾一邊保管24小時。 The photoresist storage container having the bag portion formed of the film is used for a photoresist liquid supply device to be described later, and is stored for 24 hours while performing circulation filtration.

〔比較例2〕 [Comparative Example 2]

將具有由膜所構成之袋部的光阻液保管容器使用於光阻液供給裝置,不進行循環而保管24小時。 The photoresist storage container having the bag portion formed of the film was used for the photoresist liquid supply device, and was stored without being circulated for 24 hours.

之後,使用保管於光阻液保管容器之光阻液,於基板上形成光阻層,針對起因於光阻液之凝膠化所產生的光阻層之缺陷數進行計數來實施5次的評價。光阻層之形成條件係和感度經時變化測試之情況同樣。 After that, a photoresist layer was deposited on the substrate using a photoresist liquid stored in a resist liquid storage container, and the number of defects of the photoresist layer caused by gelation of the photoresist liquid was counted, and evaluation was performed five times. . The conditions for forming the photoresist layer are the same as those for the sensitivity change test over time.

此外,於比較例2之情況係於排出管設置過濾器。 Further, in the case of Comparative Example 2, a filter was provided in the discharge pipe.

其結果,實施例2之情況,所有的評價皆未計數到深度為0.2μm以上之缺陷,但比較例2之情況,深度為0.2μm以上之缺陷,在平均上計數到11部位。 As a result, in the case of Example 2, all the defects were not counted to have a depth of 0.2 μm or more, but in the case of Comparative Example 2, the defect having a depth of 0.2 μm or more was counted on the average of 11 portions.

從此結果可知,實施例2之情況相較於比較例2之情況並未於收容部內之光阻液出現凝膠狀的異物。此外,從比較例2之結果可知,即使使用了過濾器,仍無法完全去除在光阻液所產生之凝膠狀的異物。由此可知,如本實施形態之光阻液保管容器般進行保管於容器內之光阻液之循環,可抑制暗反應所致光阻液之凝膠化,可抑制保管中光阻液中的凝膠狀的異物產生。 From the results, it was found that in the case of Example 2, gel-like foreign matter did not appear in the photoresist liquid in the accommodating portion as compared with the case of Comparative Example 2. Further, as is clear from the results of Comparative Example 2, even if a filter was used, the gel-like foreign matter generated in the photoresist liquid could not be completely removed. According to the photoresist liquid storage container of the present embodiment, the circulation of the photoresist liquid stored in the container can suppress the gelation of the photoresist solution caused by the dark reaction, and the storage of the photoresist in the photoresist can be suppressed. Gelatinous foreign matter is produced.

〔光阻液供給裝置、光阻液塗佈裝置以及光阻液保存裝置之實施形態〕 [Embodiment of photoresist liquid supply device, photoresist liquid application device, and photoresist liquid storage device]

以下,依照圖式來說明使用本發明相關之光阻液保管容器1之光阻液供給裝置、光阻液塗佈裝置以及光阻液保存裝置之實施形態。 Hereinafter, embodiments of the photoresist liquid supply device, the photoresist liquid application device, and the photoresist liquid storage device using the photoresist liquid storage container 1 according to the present invention will be described with reference to the drawings.

圖9係顯示本發明相關之光阻液供給裝置80、光阻液塗佈裝置90以及光阻液保存裝置之構成的概略圖。此外,圖9中,光阻液供給裝置80之本體係以部分破斷的部分截面圖來顯示,流體控制系統之構成係以流體電路圖來顯示。此外,光阻液塗佈裝置90具備有滴下噴嘴20,係對於在旋塗機41上所設置之例如空白光罩等對象基板S之表面滴下光阻液。 Fig. 9 is a schematic view showing the configuration of a photoresist liquid supply device 80, a photoresist liquid application device 90, and a photoresist liquid storage device according to the present invention. Further, in Fig. 9, the present system of the photoresist liquid supply device 80 is shown in a partially broken partial cross-sectional view, and the configuration of the fluid control system is shown in a fluid circuit diagram. Further, the photoresist liquid application device 90 is provided with a drip nozzle 20 for dropping a photoresist liquid on the surface of the target substrate S such as a blank mask provided on the spin coater 41.

光阻液供給裝置80具備有:光阻液保管容器1,係保管液狀的光阻液;液槽12,係以所充滿的調溫液14來浸漬收納於內部的光阻液保管容器1。此外,也可在光阻液保管容器1被收容於圓筒狀形成之外容器的狀態下來收納於光阻液供給裝置80中。 The photoresist liquid supply device 80 includes a photoresist liquid storage container 1 that stores a liquid photoresist liquid, and a liquid tank 12 that is immersed in the photoresist liquid storage container 1 that is filled therein by the temperature control liquid 14 that is filled therein. . In addition, the photoresist liquid storage container 1 may be housed in the photoresist liquid supply device 80 in a state in which it is housed in a cylindrical outer container.

區劃液槽12之內部空間的內壁係成為圓筒狀,於其內部空間收納光阻液保管容器1。藉由將液槽12之內壁做成圓筒狀,即便是收納著矩形狀之光阻液保管容器1的情況,仍可形成或是促進圍繞於調溫液14之流動。此外,雖未圖示,但也可於液槽12之一部分設置用以目視測量光阻液保管容器1內之光阻液的液量窗部。 The inner wall of the internal space of the division liquid tank 12 has a cylindrical shape, and the photoresist liquid storage container 1 is accommodated in the internal space. By forming the inner wall of the liquid tank 12 into a cylindrical shape, even when the rectangular photoresist storage container 1 is housed, the flow around the temperature control liquid 14 can be formed or promoted. Further, although not shown, a liquid amount window for visually measuring the photoresist liquid in the resist liquid storage container 1 may be provided in one portion of the liquid tank 12.

液槽12係以調溫液14可充滿至一定高度的方式具液密性地形成。此外,液槽12具備有可嵌入光阻液保管容器1之保持構件4的上蓋18,以防止調溫液14之飛濺。於此情況,光阻液保管容器1即使貯存於收容部2a之光阻液變少,仍以袋部2不會上浮的狀態來安裝於上蓋18。調溫液14雖可使用純水,但基於液量之安定化的目的也可例如將乙二醇等蒸發抑制劑添加於純水中成為水液。 The liquid tank 12 is formed in a liquid-tight manner so that the temperature-control liquid 14 can be filled to a certain height. Further, the liquid tank 12 is provided with an upper cover 18 that can be fitted into the holding member 4 of the photoresist liquid storage container 1 to prevent splashing of the temperature control liquid 14. In this case, even if the photoresist liquid stored in the accommodating portion 2a is small, the resist liquid storage container 1 is attached to the upper cover 18 in a state where the bag portion 2 does not float. Although pure water can be used for the temperature control liquid 14, it is also possible to add a vaporization inhibitor such as ethylene glycol to pure water as a water liquid for the purpose of stabilization of the liquid amount.

調溫液14係事先經由給水管線16而供給於液槽12內。此外,充滿於液槽12之調溫液14可經由排水管線17來進行排水。液槽12中係使得調溫液14充滿至較設置於既定位置的光阻液保管容器1之光阻液高度來得更高的水位,藉此,光阻液保管容器1被調溫液14所浸漬。 The temperature control liquid 14 is supplied into the liquid tank 12 via the water supply line 16 in advance. Further, the tempering liquid 14 filled in the liquid tank 12 can be drained via the drain line 17. In the liquid tank 12, the temperature adjustment liquid 14 is filled to a higher water level than the photoresist liquid level of the photoresist liquid storage container 1 disposed at a predetermined position, whereby the photoresist liquid storage container 1 is subjected to the temperature adjustment liquid 14 Impregnation.

光阻液供給裝置80具備有光阻液供給機構30,用以將光阻液保管容器1內之光阻液供給於光阻液塗佈裝置90。光阻液供給機構30至少具有:光阻液供給用之泵31;本體排出管32,係連接於光阻液保管容器1以及泵31之吸入側之間,藉由泵31所產生的負壓來上吸光阻液保管容器1內之光阻液;以及供給管33,係連接於泵31之吐出側,將泵31所吐出之光阻液供給於光阻液塗佈裝置90(滴下噴嘴20)。本體排出管32之前端係和光阻液保管容器1所安裝的排出管8相連接。此外,排出管8也可將本體排出管32直接安裝於光阻液保管容器1之保持構件4。 The photoresist liquid supply device 80 is provided with a photoresist liquid supply mechanism 30 for supplying the photoresist liquid in the photoresist liquid storage container 1 to the photoresist liquid application device 90. The resist liquid supply mechanism 30 has at least a pump 31 for supplying a photoresist liquid, and a main body discharge pipe 32 connected between the resist liquid storage container 1 and the suction side of the pump 31, and a negative pressure generated by the pump 31. The photoresist liquid in the light-absorptive liquid storage container 1 is placed in the upper portion, and the supply tube 33 is connected to the discharge side of the pump 31, and the photoresist liquid discharged from the pump 31 is supplied to the photoresist liquid application device 90 (the dropping nozzle 20). ). The front end of the main body discharge pipe 32 is connected to the discharge pipe 8 to which the photoresist storage container 1 is attached. Further, the discharge pipe 8 may directly mount the main body discharge pipe 32 to the holding member 4 of the photoresist liquid storage container 1.

泵31以光阻液之吐出流量為一定、且空泡(氣泡)之發生極少的旋轉泵為佳。此外,也可將用以將光阻液可能所含有的粒子或是凝膠化成分等加以過濾移除用的過濾器34如圖9所示般設置於泵31之吐出側配管處。此外,雖未圖示,但也可將如此之過濾器設置於泵31之吸入側配管。此外,也可在藉由後述光阻液循環機構70使得光阻液作循環之管路之中途設置如此之過濾器。 The pump 31 is preferably a rotary pump in which the discharge flow rate of the photoresist liquid is constant and the occurrence of voids (bubbles) is extremely small. In addition, the filter 34 for filtering and removing particles or gelation components which may be contained in the photoresist may be provided in the discharge side pipe of the pump 31 as shown in Fig. 9 . Further, although not shown, such a filter may be provided in the suction side pipe of the pump 31. Further, such a filter may be provided in the middle of a pipe through which the photoresist liquid circulation mechanism 70 circulates the photoresist liquid.

液槽12係設置有:使得液槽內12之調溫液14進行循環之調溫液循環機構40、以及將液槽12內之調溫液14調整為適切溫度之溫度控制機構50。藉由調溫液循環機構40以及溫度控制機構50,可將調溫液14保持於一定狀態,避免在光阻液保管容器1內之光阻液出現局部性的溫差。 The liquid tank 12 is provided with a temperature adjustment liquid circulation mechanism 40 that circulates the temperature adjustment liquid 14 in the liquid tank 12, and a temperature control mechanism 50 that adjusts the temperature adjustment liquid 14 in the liquid tank 12 to an appropriate temperature. The temperature adjustment liquid circulation mechanism 40 and the temperature control mechanism 50 can maintain the temperature adjustment liquid 14 in a constant state, thereby avoiding a local temperature difference in the photoresist liquid in the photoresist liquid storage container 1.

再者,光阻液供給裝置80具備有用以使得光阻液在光阻液保管容器1內進行循環之光阻液循環機構70。圖9中,光阻液循環機構70構成上具備有:泵31;本體排出管32,係連接於泵31之吸入埠,吸入口側插入於光阻液保管容器1;以及回管36,係從連接於泵31之吐出埠的供給管33經由三向閥35而分歧,注入口側插入於光阻液保管容器1。於回管36設有脫氣裝置42,用以將積存於本體排出管32以及回管36之內部的空氣朝外部做脫氣。回管36之前端係和裝設於光阻液保管容器1之注入管9相連接。 此外,在注入管9方面也可將回管36直接裝設於光阻液保管容器1之保持構件4。 Further, the photoresist liquid supply device 80 is provided with a photo-resistance circulation mechanism 70 for circulating the photoresist in the photoresist storage container 1. In FIG. 9, the photoresist liquid circulation mechanism 70 is configured to include a pump 31, a main body discharge pipe 32 connected to the suction port of the pump 31, a suction port side inserted into the photoresist liquid storage container 1, and a return pipe 36. The supply pipe 33 connected to the discharge port of the pump 31 is branched by the three-way valve 35, and the injection port side is inserted into the resist liquid storage container 1. A degasser 42 is provided in the return pipe 36 for deaerating the air accumulated inside the body discharge pipe 32 and the return pipe 36 toward the outside. The front end of the return pipe 36 is connected to the injection pipe 9 installed in the photoresist liquid storage container 1. Further, the return pipe 36 may be directly attached to the holding member 4 of the resist liquid storage container 1 in terms of the injection pipe 9.

光阻液循環機構70係以三向閥35之連通切換至回管36側而發揮機能。對光阻液塗佈裝置90供給光阻液之時,三向閥35之連通係切換至供給管33側。三向閥35也能以電磁閥方式構成,而利用程式化來自動控制如此之光阻液之供給/循環之動作模式的切換。此外,也可使用手動操作型三向閥35來隨時手動進行此種切換。 The photoresist circulation mechanism 70 is switched to the return pipe 36 side by the communication of the three-way valve 35 to function. When the photoresist liquid is supplied to the photoresist coating device 90, the communication of the three-way valve 35 is switched to the supply pipe 33 side. The three-way valve 35 can also be constructed by a solenoid valve, and is programmed to automatically control the switching of the operation mode of the supply/circulation of such a photoresist. Alternatively, the manual operation type three-way valve 35 can be used to manually perform such switching at any time.

依據本實施形態之光阻液供給裝置80,可使得貯存於光阻液保管容器1之收容部2a中的光阻液進行循環而供給於光阻液塗佈裝置90等。從而,可抑制光阻液保管容器1內之光阻液之凝膠化,將凝膠狀異物少的狀態之光阻液供給於光阻液塗佈裝置90等。此外,依據本實施形態之光阻液塗佈裝置90,可使用無凝膠狀異物之狀態之光阻液來對於基板等塗佈光阻液。 According to the photoresist liquid supply device 80 of the present embodiment, the photoresist liquid stored in the accommodating portion 2a of the resist liquid storage container 1 can be circulated and supplied to the photoresist liquid application device 90 or the like. Therefore, gelation of the photoresist liquid in the photoresist storage container 1 can be suppressed, and the photoresist liquid in a state in which gelled foreign matter is small can be supplied to the photoresist liquid application device 90 or the like. Further, according to the photoresist liquid application device 90 of the present embodiment, the photoresist can be applied to the substrate or the like using a photoresist having no gel-like foreign matter.

上述構成之光阻液供給裝置80也發揮將光阻液以適切狀態保存之光阻液保存裝置的機能。於此情況,光阻液保存裝置具備有:保管光阻液之光阻液保管容器1、以調溫液14浸漬光阻液保管容器1之液槽12、使得調溫液14進行循環之調溫液循環機構40、以及控制調溫液14之溫度的溫度控制機構50。 The photoresist liquid supply device 80 having the above configuration also functions as a photoresist liquid storage device that stores the photoresist liquid in an appropriate state. In this case, the photoresist liquid storage device includes a photoresist storage container 1 for storing the photoresist liquid, and a liquid bath 12 for immersing the photoresist liquid storage container 1 with the temperature adjustment liquid 14, so that the temperature adjustment liquid 14 is circulated. The warm liquid circulation mechanism 40 and the temperature control mechanism 50 that controls the temperature of the temperature control liquid 14.

依據此光阻液保存裝置,藉由溫度控制機構50來控制調溫液14之溫度,可使得光阻液保管容器1所保管之光阻液之溫度成為適切狀態。由溫度控制機構50所控制之調溫液14之溫度範圍以至少包含適合於光阻液塗佈之第一溫度(例如23℃之室溫)以及適合於光阻液保管之第二溫度(例如10℃之冷溫)為佳。 According to this photoresist liquid storage device, the temperature of the temperature control liquid 14 is controlled by the temperature control means 50, so that the temperature of the photoresist liquid stored in the photoresist liquid storage container 1 can be made appropriate. The temperature range of the temperature control liquid 14 controlled by the temperature control mechanism 50 is at least comprised of a first temperature suitable for coating of the photoresist (for example, a room temperature of 23 ° C) and a second temperature suitable for storage of the photoresist (for example) 10 ° C cold temperature is preferred.

藉此,於未進行塗佈之休止期間,可將光阻液維持保管於第二溫度(冷溫)。例如,當使用在室溫之感度變化大的化學增幅型光阻之情況,可減少光阻液置放於室溫環境下之累積時間,可抑制光阻液之感度惡化。此外,依據本實施形態之光阻液保存裝置,可使得貯存於光阻液保管容器1之收容部2a中的光阻液以循環狀態來保存。從而,可抑制光阻液保管容器1內之光阻液之凝膠化,在抑制凝膠狀的異物之產生的狀態下來保存光阻液。 Thereby, the photoresist can be maintained at the second temperature (cold temperature) during the period in which the coating is not applied. For example, when a chemically amplified photoresist having a large change in sensitivity at room temperature is used, the accumulation time of the photoresist placed in a room temperature environment can be reduced, and the sensitivity of the photoresist can be suppressed from deteriorating. Further, according to the photoresist liquid storage device of the present embodiment, the photoresist liquid stored in the housing portion 2a of the resist liquid storage container 1 can be stored in a circulating state. Therefore, gelation of the photoresist liquid in the resist liquid storage container 1 can be suppressed, and the photoresist can be stored in a state where the occurrence of gel-like foreign matter is suppressed.

〔空白遮罩之製造方法之實施形態〕 [Embodiment of Manufacturing Method of Blank Mask]

其次,針對本發明相關之空白遮罩之製造方法之實施形態來說明。 Next, an embodiment of a method of manufacturing a blank mask according to the present invention will be described.

空白遮罩係例如依照圖11所示製程流程來製造。 The blank mask is manufactured, for example, in accordance with the process flow shown in FIG.

首先,對於空白遮罩用基板S之面進行研磨,得到表面粗度1nm以下之高平坦度(步驟S1)。於該基板S之研磨面形成Cr等金屬薄膜所構成之遮光膜(步驟S2)。此遮光膜之成膜法可使用真空蒸鍍法或是濺鍍法等。 First, the surface of the blank mask substrate S is polished to obtain a high flatness of a surface roughness of 1 nm or less (step S1). A light shielding film made of a metal thin film such as Cr is formed on the polishing surface of the substrate S (step S2). As the film formation method of the light shielding film, a vacuum deposition method, a sputtering method, or the like can be used.

在利用光阻液塗佈裝置90進行光阻塗佈製程之前,先進行光阻液供給裝置80之設定。光阻液供給裝置80例如圖9所示般具備有:光阻液保管容器1,係保管光阻液;供給機構30,係將光阻液保管容器1內之光阻液供給於滴下噴嘴20;液槽12,係以所充滿之調溫液14來浸漬光阻液保管容器1;調溫液循環機構40,係使得調溫液14進行循環;以及溫度控制機構50,係控制調溫液14之溫度。 The photoresist liquid supply device 80 is set before the photoresist coating process is performed by the photoresist coating device 90. As shown in FIG. 9, the photoresist liquid supply device 80 includes a photoresist liquid storage container 1 for storing a photoresist liquid, and a supply mechanism 30 for supplying a photoresist liquid in the photoresist liquid storage container 1 to the dropping nozzle 20 The liquid tank 12 is immersed in the photoresist liquid storage container 1 with the temperature control liquid 14 filled therein; the temperature adjustment liquid circulation mechanism 40 is configured to circulate the temperature adjustment liquid 14; and the temperature control mechanism 50 controls the temperature adjustment liquid 14 temperature.

光阻液供給裝置80之準備中,使得保管光阻液之光阻液保管容器1浸漬於被充滿調溫液14的液槽12內。然後,使得調溫液循環機構40運轉讓調溫液14在液槽12內進行循環(步驟S3)。 In preparation for the photoresist supply device 80, the photoresist storage container 1 storing the photoresist is immersed in the liquid tank 12 filled with the temperature control liquid 14. Then, the temperature adjustment liquid circulation mechanism 40 is operated to circulate the temperature adjustment liquid 14 in the liquid tank 12 (step S3).

與此同時,使得溫度控制機構50運轉,而將在液槽12內循環之調溫液14之溫度控制在適合於光阻液塗佈的溫度(例如23℃之室溫)(步驟S4)。 At the same time, the temperature control mechanism 50 is operated to control the temperature of the temperature regulating liquid 14 circulating in the liquid tank 12 to a temperature suitable for the photoresist coating (for example, a room temperature of 23 ° C) (step S4).

其次,藉由供給機構30從光阻液供給裝置80對光阻液塗佈裝置90供給光阻液(步驟S5)。然後,對於載置在旋塗機41之空白遮罩用基板S,從滴下噴嘴20以既定量滴下光阻液。藉由使得旋塗機41以高速旋轉,讓光阻液在空白遮罩用基板S之表面上擴散來均一塗佈(步驟S6)。 Next, the photoresist liquid is supplied from the photoresist liquid supply device 80 to the photoresist liquid application device 90 by the supply mechanism 30 (step S5). Then, with respect to the blank mask substrate S placed on the spin coater 41, the photoresist liquid is dropped from the dripping nozzle 20 by a predetermined amount. By rotating the spin coater 41 at a high speed, the photoresist liquid is uniformly spread on the surface of the blank mask substrate S (step S6).

然後,將塗佈了光阻液之空白遮罩用基板S移至熱板裝置,使得空白遮罩用基板S之表面溫度維持在約100℃來進行烘烤(步驟S7)。藉此,光阻液所含有機溶劑被蒸發,光阻固定於空白遮罩用基板S。 Then, the blank mask substrate S coated with the photoresist liquid is moved to the hot plate device, and the surface temperature of the blank mask substrate S is maintained at about 100 ° C to be baked (step S7). Thereby, the organic solvent contained in the photoresist liquid is evaporated, and the photoresist is fixed to the substrate S for the blank mask.

〔實施例〕 [Examples]

本實施例中,準備主表面之尺寸為約152mm×約152mm、厚度為約6.25mm之合成石英玻璃所構成之空白遮罩用基板(透光性基板)。此空白遮罩用基板係將端面以及主表面研磨至既定表面粗度,之後,施以既定洗淨處理以及乾燥處理者。 In the present embodiment, a blank mask substrate (translucent substrate) composed of synthetic quartz glass having a main surface of about 152 mm × about 152 mm and a thickness of about 6.25 mm was prepared. This blank mask substrate is obtained by polishing the end surface and the main surface to a predetermined surface roughness, and then applying a predetermined washing treatment and drying treatment.

其次,於上述空白遮罩用基板上形成由氮化鉬以及矽所構成之半色調型相位轉移膜(圖案形成用薄膜)。 Next, a halftone phase shift film (film for pattern formation) composed of molybdenum nitride and niobium is formed on the blank mask substrate.

具體而言,在單片式DC濺鍍裝置內設置空白遮罩用基板,使用鉬(Mo)與矽(Si)之混合靶(Mo:Si=10at%:90at%),以氬(Ar)與氮(N2)與氦(He)之混合氣體雰圍(氣體流量比Ar:N2:He=5:49:46)、氣壓0.3Pa、DC電源之電力為3.0kW,藉由反應性濺鍍(DC濺鍍)以69nm之膜厚來形成由鉬、矽以及氮所構成之MoSiN膜。 Specifically, a blank mask substrate is provided in a monolithic DC sputtering apparatus, and a mixed target of molybdenum (Mo) and bismuth (Si) (Mo: Si = 10 at%: 90 at%) is used, and argon (Ar) is used. Mixed gas atmosphere with nitrogen (N 2 ) and helium (He) (gas flow ratio Ar: N 2 : He = 5:49:46), gas pressure 0.3 Pa, power of DC power source is 3.0 kW, by reactive splash The plating (DC sputtering) forms a MoSiN film composed of molybdenum, niobium, and nitrogen at a film thickness of 69 nm.

其次,對於形成了上述MoSiN膜之基板施以加熱處理做為退火處理。具體而言,使用加熱爐,在大氣中以加熱溫度450℃、加熱時間1小時來進行加熱處理。此外,此MoSiN膜於ArF準分子雷射的穿透率為6.16%,相位差為184.4度。 Next, the substrate on which the above MoSiN film was formed was subjected to heat treatment as an annealing treatment. Specifically, heat treatment was carried out in a heating furnace at a heating temperature of 450 ° C for 1 hour in the air. In addition, the MoSiN film has a transmittance of 6.16% in an ArF excimer laser and a phase difference of 184.4 degrees.

其次,於半色調型相位轉移膜上形成由鉻系材料所構成之遮光膜(圖案形成用薄膜)。 Next, a light-shielding film (film for pattern formation) made of a chromium-based material is formed on the halftone phase shift film.

具體而言,使用鉻(Cr)靶,在氬(Ar)與二氧化碳(CO2)與氮(N2)與氦(He)之混合氣體雰圍(氣體流量比Ar:CO2:N2:He=20:35:10:30),以氣壓0.2Pa、DC電源之電力1.7kW而藉由反應性濺鍍(DC濺鍍)來以30nm之膜厚形成CrOCN膜。 Specifically, a chromium (Cr) target is used, and a mixed gas atmosphere of argon (Ar) and carbon dioxide (CO 2 ) and nitrogen (N 2 ) and helium (He) (gas flow ratio Ar: CO 2 : N 2 : He) =20:35:10:30) A CrOCN film was formed by a reactive sputtering (DC sputtering) at a film thickness of 30 nm at a gas pressure of 0.2 Pa and a DC power of 1.7 kW.

接著,使用鉻(Cr)靶,在氬(Ar)與氮(N2)之混合氣體雰圍(氣體流量比Ar:N2=25:75),以氣壓0.1Pa、DC電源之電力1.7kW而藉由反應性濺鍍(DC濺鍍)來以4nm之膜厚形成CrN膜。 Next, a chromium (Cr) target was used, in a mixed gas atmosphere of argon (Ar) and nitrogen (N 2 ) (gas flow ratio Ar: N 2 = 25:75), a gas pressure of 0.1 Pa, and a DC power supply of 1.7 kW. A CrN film was formed by reactive sputtering (DC sputtering) at a film thickness of 4 nm.

再者,使用鉻(Cr)靶,在氬(Ar)與二氧化碳(CO2)與氮(N2)與氦(He)之混合氣體雰圍(氣體流量比Ar:CO2:N2:He=20:35:5:30),以氣壓0.2Pa、DC電源之電力1.7kW而藉由反應性濺鍍(DC濺鍍)來以14nm之膜厚形成CrOCN膜。 Further, a chromium (Cr) target is used in a mixed gas atmosphere of argon (Ar) and carbon dioxide (CO 2 ) and nitrogen (N 2 ) and helium (He) (gas flow ratio Ar: CO 2 : N 2 : He = 20:35:5:30) A CrOCN film was formed with a film thickness of 14 nm by reactive sputtering (DC sputtering) at a gas pressure of 0.2 Pa and a power of 1.7 kW of a DC power source.

藉由以上順序,從基板側起形成CrOCN膜、CrN膜、CrOCN膜之3層積層構造的鉻系材料遮光膜(膜厚48nm)。藉由以上之製程來得到半色調型相位轉移空白遮罩(空白遮罩)。此外,本實施例之空白遮罩,相對於ArF準分子雷射(波長:193nm)之光學濃度(OD)為3.0,遮光膜之表面反射率為20%。 In the above procedure, a chromium-based material light-shielding film (film thickness: 48 nm) having a three-layered structure of a CrOCN film, a CrN film, and a CrOCN film was formed from the substrate side. A halftone phase shift blank mask (blank mask) is obtained by the above process. Further, in the blank mask of the present embodiment, the optical density (OD) with respect to the ArF excimer laser (wavelength: 193 nm) was 3.0, and the surface reflectance of the light-shielding film was 20%.

依據本實施形態之光阻遮罩之製造方法,由於使得光阻液保管容器1內之光阻液進行循環,而使用抑制了暗反應所致光阻液之凝膠化、凝膠狀異物少的光阻液,而可製造缺陷少的空白遮罩。此外,本實施形態中做為塗佈光阻液之基板係使用了光罩用基板,但也可適用壓印用基板。 According to the method for producing a photoresist mask of the present embodiment, since the photoresist liquid in the resist liquid storage container 1 is circulated, gelation of the photoresist liquid caused by the dark reaction is suppressed, and gelled foreign matter is less. The photoresist can be used to create a blank mask with few defects. Further, in the present embodiment, the substrate for the photoresist is used as the substrate for applying the photoresist, but the substrate for imprint may be applied.

<半色調型相位轉移遮罩之製造> <Manufacture of Halftone Phase Shift Mask>

其次,使用上述方法所製造之空白遮罩來製作相位轉移遮罩150。圖12A~圖12F係顯示使用相位轉移空白遮罩100來製造相位轉移遮罩150之製程的截面示意圖。首先,於空白遮罩100上以光阻液塗佈裝置90來形成光阻膜104(參見圖12A)。 Next, the phase shift mask 150 is fabricated using the blank mask manufactured by the above method. 12A to 12F are schematic cross-sectional views showing a process of manufacturing the phase shift mask 150 using the phase transfer blank mask 100. First, the photoresist film 104 is formed on the blank mask 100 with the photoresist liquid coating device 90 (see FIG. 12A).

其次,對於在上述空白遮罩100上所形成之光阻膜104以電子束描繪裝置進行了相位轉移圖案之圖案描繪後,以既定顯影液來顯影而形成光阻圖案104a(參見圖12B)。 Next, the photoresist film 104 formed on the blank mask 100 is patterned by a phase shift pattern by an electron beam drawing device, and then developed with a predetermined developer to form a photoresist pattern 104a (see FIG. 12B).

其次,以上述光阻圖案104a為遮罩,進行遮光膜103(Cr系遮光膜)之蝕刻來形成遮光膜圖案103a(參見圖12C)。在乾式蝕刻氣體方面係使用了Cl2以及O2的混合氣體。 Then, the light-shielding film 103 (Cr-type light-shielding film) is etched by the photoresist pattern 104a as a mask to form the light-shielding film pattern 103a (see FIG. 12C). A mixed gas of Cl 2 and O 2 is used in the dry etching gas.

其次,以上述遮光膜圖案103a為遮罩,進行半色調型相位轉移膜102(MoSiN膜)之蝕刻來形成相位轉移圖案102a(參見圖12D)。在乾式蝕刻氣體方面使用了SF6以及He之混合氣體。 Next, the phase shift pattern 102a is formed by etching the halftone phase shift film 102 (MoSiN film) using the light shielding film pattern 103a as a mask (see FIG. 12D). A mixed gas of SF 6 and He is used for the dry etching gas.

其次,於空白遮罩100上同樣地形成光阻膜104,使用電子束描繪裝置來進行遮光帶之圖案描繪後,以既定顯影液來顯影而形成光阻圖案104b(參見圖12E)。 Next, the photoresist film 104 is formed in the same manner on the blank mask 100, and after patterning of the light-shielding tape by the electron beam drawing device, the photoresist pattern 104b is formed by development with a predetermined developer (see FIG. 12E).

其次,以上述光阻圖案104b為遮罩,進行遮光膜圖案103a(Cr系遮光膜)之蝕刻來形成遮光膜圖案(遮光帶)103b。在乾式蝕刻氣體方面係使用了Cl2以及O2之混合氣體。 Next, the light-shielding film pattern 103a (light-shielding film) 103b is formed by etching the light-shielding film pattern 103a (Cr-type light-shielding film) by using the said photoresist pattern 104b as a mask. A mixed gas of Cl 2 and O 2 is used in the dry etching gas.

其次,剝離殘存的光阻圖案,得到相位轉移遮罩150(參見圖12F)。依據本實施形態,由於如上述般使用了缺陷少的空白遮罩100,而可得到高品質之相位轉移遮罩150。 Next, the remaining photoresist pattern is peeled off to obtain a phase shift mask 150 (see Fig. 12F). According to the present embodiment, since the blank mask 100 having few defects is used as described above, a high-quality phase shift mask 150 can be obtained.

以上,針對本發明係基於實施形態做了說明,但本發明不限定於上述實施形態所記載之構成,可在不脫離其意旨的範圍內適宜地變更構成。例 如,上述實施形態例乃為了容易理解本發明所做的詳細說明,但未必限定在具備所說明過的全部構成。此外,可將某實施形態之構成之一部分置換為其他實施形態之構成,此外,針對某實施形態之構成也可加入其他實施形態之構成。此外,關於各實施形態之構成之一部分,可進行其他構成之追加、削除、置換。 The present invention has been described above based on the embodiments, but the present invention is not limited to the configurations described in the above embodiments, and the configuration can be appropriately changed without departing from the scope of the invention. example For the sake of easy understanding of the detailed description of the present invention, the above embodiments are not necessarily limited to the configuration described above. Further, a part of the configuration of a certain embodiment may be replaced with a configuration of another embodiment, and a configuration of another embodiment may be added to the configuration of a certain embodiment. Further, addition, removal, and replacement of other configurations may be made for one of the configurations of the respective embodiments.

本專利申請係以2015年3月26日提出申請之日本專利申請第2015-063639號之優先權為基礎而主張其利益,其揭示全體係以參考文獻的方式納入本說明書中。 This patent application claims its benefit based on the priority of Japanese Patent Application No. 2015-063639 filed on March 26, 2015, the disclosure of which is incorporated herein by reference.

1‧‧‧光阻液保管容器 1‧‧‧Photoresist storage container

2‧‧‧袋部 2‧‧‧ bag department

2a‧‧‧收容部 2a‧‧‧Receiving Department

3‧‧‧環口構件 3‧‧‧ ring member

3a‧‧‧開口部 3a‧‧‧ openings

4‧‧‧保持構件 4‧‧‧Retaining components

4a‧‧‧頭部 4a‧‧‧ head

4b‧‧‧卡合部 4b‧‧‧Clock Department

4c‧‧‧上面 4c‧‧‧above

4d‧‧‧側周面 4d‧‧‧ side circumference

5‧‧‧空間部 5‧‧‧ Space Department

8‧‧‧排出管 8‧‧‧Draining tube

8a‧‧‧排出管孔 8a‧‧‧Drainage tube hole

9‧‧‧注入管 9‧‧‧Injection tube

9a‧‧‧注入管孔 9a‧‧‧Injection tube hole

Claims (10)

一種光阻液保管容器,係保管光微影所使用之光阻液;具有:可撓性之袋部,係具有貯存光阻液之收容部;注入管,係連通於該收容部,對該收容部注入光阻液;以及排出管,係連通於該收容部,將貯存於該收容部之光阻液排出於光阻液保管容器之外。 A photoresist liquid storage container for storing a photoresist liquid used for photolithography; a flexible bag portion having a storage portion for storing a photoresist liquid; and an injection tube connected to the housing portion for The accommodating portion injects the photoresist liquid; and the discharge tube communicates with the accommodating portion, and discharges the photoresist liquid stored in the accommodating portion out of the photoresist liquid storage container. 如申請專利範圍第1項之光阻液保管容器,係具有用以保持該注入管與該排出管之保持構件;在該注入管以及該排出管連通於該收容部之狀態下,該保持構件被安裝於該袋部。 The photoresist storage container according to claim 1 is a holding member for holding the injection tube and the discharge tube; and the holding member is in a state in which the injection tube and the discharge tube communicate with the receiving portion It is attached to the pocket. 如申請專利範圍第2項之光阻液保管容器,其中該袋部設有卡合保持部,係用以和該保持構件做卡合而將該保持構件裝設於該袋部。 A photoresist storage container according to claim 2, wherein the bag portion is provided with an engagement holding portion for engaging with the holding member to mount the holding member to the bag portion. 如申請專利範圍第2項之光阻液保管容器,其中該保持構件為具有上面部與側面部之圓筒形狀,該注入管被保持於該上面部,該排出管被保持於該側面部。 The photoresist storage container according to claim 2, wherein the holding member has a cylindrical shape having an upper surface portion and a side surface portion, and the injection tube is held by the upper surface portion, and the discharge tube is held by the side surface portion. 如申請專利範圍第2項之光阻液保管容器,其中該收容部之該注入管之前端係以相對於該排出管之前端位於該保持構件側的方式來配置。 The photoresist storage container according to claim 2, wherein the front end of the injection tube of the housing portion is disposed on the holding member side with respect to the front end of the discharge tube. 如申請專利範圍第1至5項中任一項之光阻液保管容器,係以該注入管之中心軸與該排出管之中心軸成為一致的方式來配置,且該注入管之直徑大於該排出管之直徑。 The photoresist storage container according to any one of claims 1 to 5, wherein the central axis of the injection tube is aligned with a central axis of the discharge tube, and the diameter of the injection tube is larger than the diameter The diameter of the discharge pipe. 一種光阻液供給裝置,具有:光阻液保管容器,具有:可撓性之袋部,係具有貯存光微影所使用之光阻液的收容部;注入管,係連通於該收容部,對該收容部注入光阻液;以及排出管,係連通於該收容部,將貯存於該收容部之光阻液排出於光阻液保管容器之外;液槽,係以所充滿之調溫液來浸漬該光阻液保管容器;調溫液循環機構,係使得充滿於該液槽中的調溫液進行循環;溫度控制機構,係對於被充滿的調溫液之溫度進行控制;以及供給機構,係將該光阻液保管容器內之光阻液供給於光阻液塗佈裝置。 A photoresist liquid supply device comprising: a photoresist liquid storage container; a flexible bag portion; and a storage portion for storing a photoresist liquid used for lithography; and an injection tube connected to the storage portion; a photoresist is injected into the accommodating portion; and the discharge pipe is connected to the accommodating portion, and the photoresist liquid stored in the accommodating portion is discharged outside the photoresist storage container; and the liquid tank is filled with the tempering temperature The liquid is used to impregnate the photoresist storage container; the temperature adjustment liquid circulation mechanism is configured to circulate the temperature adjustment liquid filled in the liquid tank; the temperature control mechanism controls the temperature of the filled temperature adjustment liquid; The mechanism supplies the photoresist liquid in the photoresist storage container to the photoresist liquid application device. 一種光阻液塗佈裝置,具有:光阻液保管容器,具有:可撓性之袋部,係具有貯存光微影所使用之光阻液的收容部;注入管,係連通於該收容部,對該收容部注入光阻液;以及排出管,係連通於該收容部,將貯存於該收容部之光阻液排出於光阻液保管容器之外;液槽,係以所充滿之調溫液來浸漬該光阻液保管容器;調溫液循環機構,係使得充滿於該液槽中的調溫液進行循環;溫度控制機構,係對於被充滿的調溫液之溫度進行控制;供給機構,係將該光阻液保管容器內之光阻液供給於光阻液塗佈裝置;以及滴下噴嘴,係使得該供給機構所供給之光阻液滴下至基板表面。 A photoresist liquid coating apparatus comprising: a photoresist liquid storage container; a flexible bag portion; and a storage portion for storing a photoresist liquid used for lithography; and an injection tube connected to the housing portion a photoresist is injected into the accommodating portion; and the discharge pipe is connected to the accommodating portion, and the photoresist liquid stored in the accommodating portion is discharged outside the photoresist storage container; the liquid tank is filled with the liquid Warming liquid to impregnate the photoresist storage container; the temperature adjustment liquid circulation mechanism is to circulate the temperature adjustment liquid filled in the liquid tank; the temperature control mechanism controls the temperature of the filled temperature adjustment liquid; The mechanism supplies the photoresist liquid in the photoresist storage container to the photoresist liquid application device, and drops the nozzle such that the photoresist supplied from the supply mechanism drops down to the surface of the substrate. 一種光阻液保存裝置,具有:光阻液保管容器,具有:可撓性之袋部,係具有貯存光微影所使用之光阻液的收容部;注入管,係連通於該收容部,對該收容部注入光阻液;以及排出管,係連通於該收容部,將貯存於該收容部之光阻液排出於光阻液保管容器之外;液槽,係以所充滿之調溫液來浸漬該光阻液保管容器;調溫液循環機構,係使得充滿於該液槽中的調溫液進行循環;以及溫度控制機構,係對於被充滿的調溫液之溫度進行控制。 A photoresist liquid storage device comprising: a photoresist liquid storage container, comprising: a flexible bag portion; and a storage portion for storing a photoresist liquid used for lithography; and an injection tube connected to the storage portion; a photoresist is injected into the accommodating portion; and the discharge pipe is connected to the accommodating portion, and the photoresist liquid stored in the accommodating portion is discharged outside the photoresist storage container; and the liquid tank is filled with the tempering temperature The liquid is immersed in the photoresist storage container; the temperature adjustment liquid circulation mechanism circulates the temperature adjustment liquid filled in the liquid tank; and the temperature control mechanism controls the temperature of the filled temperature adjustment liquid. 一種空白遮罩之製造方法,具有:於基板的一面形成圖案形成用薄膜之製程、以及使用光阻液塗佈裝置將光阻液塗佈於該薄膜之表面並固定之製程;具有下述步驟:將保管光阻液之光阻液保管容器內的光阻液使用排出管與注入管來產生循環之步驟;使得浸漬該光阻液保管容器之浴槽內的調溫液產生循環之步驟;將該浴槽內之該調溫液之溫度控制在適合於光阻液塗佈的溫度之步驟;以及將該適合於塗佈之溫度的光阻液供給於該光阻液塗佈裝置之步驟。 A method for manufacturing a blank mask, comprising: a process of forming a film for pattern formation on one surface of a substrate; and a process of applying a photoresist solution to the surface of the film by a photoresist coating device and fixing the film; : a step of using a discharge pipe and an injection pipe to generate a circulation by using a discharge pipe and an injection pipe in the photoresist liquid storage container for storing the photoresist; and a step of circulating the temperature adjustment liquid in the bath of the photoresist storage container; The temperature of the temperature regulating liquid in the bath is controlled at a temperature suitable for the temperature of the photoresist coating; and the step of supplying the photoresist suitable for the coating temperature to the photoresist coating device.
TW105108398A 2015-03-26 2016-03-18 Resist liquid storage container, resist liquid supplying device, resist liquid coating device, resist liquid storage device, and method of manufacturing a mask blank TWI689356B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015063639A JP6495063B2 (en) 2015-03-26 2015-03-26 Resist solution storage container, resist solution supply device, resist solution coating device, resist solution storage device, and mask blank manufacturing method
JP2015-063639 2015-03-26

Publications (2)

Publication Number Publication Date
TW201703875A true TW201703875A (en) 2017-02-01
TWI689356B TWI689356B (en) 2020-04-01

Family

ID=56977413

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105108398A TWI689356B (en) 2015-03-26 2016-03-18 Resist liquid storage container, resist liquid supplying device, resist liquid coating device, resist liquid storage device, and method of manufacturing a mask blank

Country Status (5)

Country Link
JP (1) JP6495063B2 (en)
KR (1) KR102536128B1 (en)
SG (1) SG11201707614UA (en)
TW (1) TWI689356B (en)
WO (1) WO2016152472A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2026157B1 (en) * 2020-07-29 2022-03-29 Suss Microtec Lithography Gmbh Adapter, Connection Device and Supply System

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1340347C (en) 1988-02-16 1999-01-26 Michael L. Osgar Container and dispensing system for liquid chemicals
JPH07123107B2 (en) * 1991-07-22 1995-12-25 株式会社イワキ Fluid dropping supply device
JPH0920359A (en) * 1995-07-05 1997-01-21 Hitachi Ltd Solution supplying device
JP3176540B2 (en) 1995-10-02 2001-06-18 アイセロ化学株式会社 High purity resin composition and molded article of the resin composition
JP5698456B2 (en) * 2006-06-13 2015-04-08 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド Liquid distribution system including gas removal
JP2008140964A (en) * 2006-12-01 2008-06-19 Matsushita Electric Ind Co Ltd Chemical supply apparatus, and method for manufacturing semiconductor device
JP5416117B2 (en) * 2007-08-28 2014-02-12 インテグリス・インコーポレーテッド Fluid distribution method and apparatus
JP2009241056A (en) * 2008-03-10 2009-10-22 Toray Ind Inc Method and apparatus for defoaming coating liquid, and method for manufacturing display member
JP5471281B2 (en) * 2009-10-19 2014-04-16 大日本印刷株式会社 Liquid supply system, liquid supply method, and coating apparatus
JP6106394B2 (en) * 2012-09-20 2017-03-29 Hoya株式会社 Resist solution supply device, resist coating device, resist solution temperature control method, resist solution storage device, and mask blank manufacturing method

Also Published As

Publication number Publication date
SG11201707614UA (en) 2017-10-30
WO2016152472A1 (en) 2016-09-29
TWI689356B (en) 2020-04-01
JP6495063B2 (en) 2019-04-03
JP2016184640A (en) 2016-10-20
KR102536128B1 (en) 2023-05-25
KR20170129760A (en) 2017-11-27

Similar Documents

Publication Publication Date Title
US7665916B2 (en) Coater/developer and coating/developing method
TWI471901B (en) Immersion photolithography system
KR101359804B1 (en) Substrate processing system
US20060147620A1 (en) Slit coater with a standby unit for a nozzle and a coating method using the same
JP6106394B2 (en) Resist solution supply device, resist coating device, resist solution temperature control method, resist solution storage device, and mask blank manufacturing method
KR100444709B1 (en) Method and device for correcting pattern film on a semiconductor substrate
US20190317408A1 (en) Method and apparatus for processing substrate
TW201703875A (en) Resist liquid storage container, resist liquid supplying device, resist liquid coating device, resist liquid storage device, and method of manufacturing a mask blank
JP2010067967A (en) Lithographic equipment, manufacturing method of object therefor, and device manufacturing method
EP0851301A1 (en) Liquid supplying device
JP3819270B2 (en) Coating liquid supply apparatus and coating apparatus using the apparatus
JP2004006762A (en) Coater, method and device for managing liquid level thereof, manufacturing method and pattern formation for resist film attached substrate, and manufacturing method of photomask
JP2006024715A (en) Lithography apparatus and pattern forming method
JP6411046B2 (en) Mask blank substrate manufacturing method, mask blank manufacturing method, and transfer mask manufacturing method
US7826032B2 (en) Circulation system for high refractive index liquid in pattern forming apparatus
JP4034285B2 (en) Temperature control system and temperature control method
US9352073B2 (en) Functional film
JPH03291913A (en) Coating equipment for manufacturing semiconductor
JP7151774B2 (en) Phase shift mask blanks, phase shift mask, exposure method, device manufacturing method, phase shift mask blank manufacturing method, phase shift mask manufacturing method, exposure method, and device manufacturing method
JP3283251B2 (en) Resist processing equipment
JP2012096148A (en) Fluid supply method, fluid feeding apparatus, and method for manufacturing mold
JPH05109613A (en) Chemical treatment apparatus
JP2000033317A (en) Substrate treating device
KR20060020138A (en) Photo resist supply equipment of semiconductor coating device
KR20070070268A (en) Photo resist supply equipment of semiconductor coating device