JPH03291913A - Coating equipment for manufacturing semiconductor - Google Patents

Coating equipment for manufacturing semiconductor

Info

Publication number
JPH03291913A
JPH03291913A JP9332590A JP9332590A JPH03291913A JP H03291913 A JPH03291913 A JP H03291913A JP 9332590 A JP9332590 A JP 9332590A JP 9332590 A JP9332590 A JP 9332590A JP H03291913 A JPH03291913 A JP H03291913A
Authority
JP
Japan
Prior art keywords
temperature
coating
resist solution
solution
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9332590A
Other languages
Japanese (ja)
Inventor
Akiyoshi Ishii
哲好 石井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP9332590A priority Critical patent/JPH03291913A/en
Publication of JPH03291913A publication Critical patent/JPH03291913A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain an equipment which can restrain deterioration in the case of resist material whose characteristics may be deteriorated at a room temperature, and at the same time, prevent the generation of nonuniformity of a coating film and change of film thickness caused by local concentration change of resist solution, by installing a refrigeration unit, a low temperature accommodation unit, and a constant temperature unit which are individually specified. CONSTITUTION:A coating equipment wherein resist solution 8 is dripped on a semiconductor substrate 7 and spin-coating is performed is constituted of the following; a refrigeration unit 9 which preserves the resist solution 8 at a low temperature wherein said solution is not denatured, a low temperature accommodation unit 11 which maintains a filter 5 and a pump 6 connected with a coating solution supplying pipe 4 through which the resist solution 8 is sent, at a low temperature wherein the solution 8 is not denatured, and a constant temperature unit 10 which increases the temperature of the solution 8 in the coating solution supplying pipe 4 and keeps a specified coating temperature. For example, a chemical liquid bottle 2 containing the resist solution 8 is preserved in the refrigeration unit 9, which is cooled by a refrigerator and kept at a temperature lower than or equal to 10 deg.C. The low temperature accommodation unit 11 accommodating the filter 5 and the pump 6 is similarly cooled by the refrigerator.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、半導体製造装置に関するものであり、特に各
種基板にレジストを塗布する塗布装置に関するものであ
る。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to semiconductor manufacturing equipment, and particularly to a coating device for coating resist on various substrates.

(従来の技術) 各種半導体の製造は主として以下のバタン形成工程の繰
り返しからなる。
(Prior Art) The manufacture of various semiconductors mainly consists of repeating the following baton forming process.

先ず、基板上に絶縁物、金属等の薄膜を堆積したのち感
光性樹脂からなる有機高分子(通称レジスト)溶液を回
転塗布してレジスト薄膜を作成する。前記回転塗布は所
定の溶媒にレジストを溶解したレジスト溶液をノズルか
ら基板上に清下し、この後基板を所定の回転数で回転さ
せ、所望の膜厚の高分子膜を得る手法である0次に所望
のバタンを紫外線、X線、電子線等を用いてレジスト上
に露光する。現像工程を経て所望のレジストパタンを形
成し、このレジストバタンをマスクとして前記絶縁物、
金属等の薄膜をエツチング加工して所望の薄膜バタンを
得る。したがって、レジストパタンの寸法精度は加工し
た薄膜バタンの精度、すなわち半導体の性能を左右する
First, a thin film of an insulator, metal, etc. is deposited on a substrate, and then an organic polymer (commonly known as resist) solution made of a photosensitive resin is spin-coated to create a resist thin film. The spin coating is a method in which a resist solution in which a resist is dissolved in a predetermined solvent is poured onto a substrate from a nozzle, and then the substrate is rotated at a predetermined number of rotations to obtain a polymer film with a desired thickness. Next, a desired pattern is exposed onto the resist using ultraviolet rays, X-rays, electron beams, or the like. A desired resist pattern is formed through a development process, and the insulator,
A desired thin film pattern is obtained by etching a thin film of metal or the like. Therefore, the dimensional accuracy of the resist pattern influences the accuracy of the processed thin film batten, that is, the performance of the semiconductor.

これまで市販されている半導体製造用塗布装置は、第3
図に示すような構成となっている。薬液[2内に保管さ
れているレジスト溶液8は、ポンプ6によりフィルター
5を通してノズル3まで送液され、恒温部により一定の
塗布温度に温度調節されたのち、基板7上に滴下される
。この場合、前記薬液瓶、フィルター、ポンプおよび配
管は、室温あるいは装置内の装置稼動、制御用のモータ
The coating equipment for semiconductor manufacturing that has been commercially available so far is
The configuration is as shown in the figure. The resist solution 8 stored in the chemical solution [2 is sent to the nozzle 3 through the filter 5 by the pump 6, and is dripped onto the substrate 7 after being temperature-controlled to a constant coating temperature by the constant temperature section. In this case, the drug solution bottle, filter, pump, and piping are located at room temperature or at a motor for operating and controlling the device inside the device.

ボード類の発熱により室温よりやや高い温度(25〜3
0℃)のもとに置かれる。その結果、前記薬液瓶、フィ
ルター、ポンプおよび配管内のレジスト溶液は変質(レ
ジスト分子間の熱架橋や感光荊の分解等)して感度、解
像性等の特性が劣化する問題が発生していた6例えば、
シラプレー社製のSAL (Shipley Adva
nced Lithography)レジストなどはジ
ャーナル・オブ・バキュウム・サイエンス−アンド−テ
クノロジー(Journal of VacuumSc
ience and Technology)誌、第B
6@、第1号、1988年、第379〜第383頁に報
告されているように高解像、高感度電子ビーム化学増幅
系レジストとして知られているが、10℃以下では半年
以上たっても材料の変質は認められないが、25℃以上
になると1〜2週間で変質が顕著となり感度、解像性と
も数十%低下することが確認された。また前記薬液瓶、
フィルター、ポンプおよび配管内のレジスト溶液から、
経時的に溶媒が揮発することにより、それらに残存する
レジスト溶液の濃度が局部的に変化し、塗布むらなどに
よりウニへ面内で塗布膜が不均一になったり、塗布膜厚
がウェハ間で変動したりして、レジストパタンの寸法精
度の低下を招いていた。
Due to the heat generated by the boards, the temperature is slightly higher than room temperature (25 to 3
0°C). As a result, the resist solutions in the drug bottles, filters, pumps, and piping are altered (thermal cross-linking between resist molecules, decomposition of photoreceptors, etc.), resulting in deterioration of characteristics such as sensitivity and resolution. For example,
SAL manufactured by Shipley Adva
nced lithography) resists, etc. are published in the Journal of Vacuum Science and Technology (Journal of VacuumSc
Science and Technology) Magazine, Volume B
6@, No. 1, 1988, pp. 379-383, it is known as a high-resolution, high-sensitivity electron beam chemically amplified resist, but even after more than half a year at temperatures below 10°C, Although no deterioration of the material was observed, it was confirmed that when the temperature exceeded 25° C., the deterioration became noticeable in 1 to 2 weeks, and both sensitivity and resolution decreased by several tens of percent. Moreover, the medicine liquid bottle,
From resist solutions in filters, pumps and piping,
As the solvent evaporates over time, the concentration of the remaining resist solution changes locally, resulting in uneven coating, which can cause the coating film to become uneven within the surface of the sea urchin, and the coating film thickness to vary between wafers. This caused a decrease in the dimensional accuracy of the resist pattern.

これまで前記問題を解決する手段として、例えば特願昭
62−25331号明細書に記載されているように、冷
蔵部を設けてレジスト溶液を低温保存すると同時に配管
系に残存するレジスト溶液を溶媒により溶解除去する方
法が知られている。第2図はこの一例を示したもので、
レジスト溶液8は冷蔵部9内の薬液瓶2に低温保存され
、恒温部10で所定の温度に昇温されたのちノズル3に
より基板7上に滴下される。この場合、冷蔵部の温度は
レジスト溶液の変質ならびにレジスト溶液からの溶媒の
揮発が起こらないか、無視できるほど小さいものとなる
よう設定されている。これにより薬液瓶内のレジスト溶
液に対して、周囲の温度の影響による変質ならびに溶媒
揮発による濃度変化を抑制している。さらに塗布後、必
要に応じて溶剤12を切換弁13を通して配管内に圧送
することにより、フィルター、ポンプおよび配管系内に
残存するレジスト溶液を溶解除去し、それら内部に残存
するレジスト溶液に対しても変質、濃度変化を回避して
塗布膜厚の不均一、膜厚変動を防いでいる。
Until now, as a means to solve the above problem, as described in Japanese Patent Application No. 62-25331, a refrigerated section is installed to preserve the resist solution at a low temperature, and at the same time, the resist solution remaining in the piping system is removed using a solvent. A method of dissolving and removing it is known. Figure 2 shows an example of this.
The resist solution 8 is stored at a low temperature in a chemical liquid bottle 2 in a refrigerator section 9, heated to a predetermined temperature in a constant temperature section 10, and then dripped onto the substrate 7 by a nozzle 3. In this case, the temperature of the refrigeration unit is set so that deterioration of the resist solution and volatilization of the solvent from the resist solution do not occur, or are so low as to be negligible. This suppresses deterioration of the resist solution in the chemical bottle due to the influence of ambient temperature and concentration change due to solvent volatilization. Furthermore, after coating, the resist solution remaining in the filter, pump, and piping system is dissolved and removed by pumping the solvent 12 into the piping through the switching valve 13 as necessary. It also avoids deterioration and concentration changes, thereby preventing unevenness and variation in coating film thickness.

(発明が解決しようとする11g) 上述した従来技術では、レジスト溶液を低温保存すると
同時にポンプ、フィルターおよび配管内に残存するレジ
スト溶液を溶剤により溶解除去している。しかし、この
方法ではフィルターおよびポンプ内の微細間隙あるいは
微細構造部分に残存するレジスト溶液を完全に除去する
ことはてきず、これらの残存レジストが室温、あるいは
周囲の発熱体により室温よりやや高い温度下に置かれる
ため変質してしまうという欠点があった。また溶解除去
用の溶剤もレジスト溶液と同様、フィルターおよびポン
プ内に残存してしまうため送液、塗布時にこれらの残存
レジスト溶液、溶剤と冷蔵部ニット内の薬液瓶から送出
されてくるレジスト溶液とが混合し、塗布液の濃度が局
部的に変化してしまうため塗布膜が不均一になったり、
膜厚が変動したりするという問題もあった。さらに塗布
工程の高精度制御のために従来使用されている異物除去
用フィルターと精密送液用ポンプの内容積を合わせると
100cc以上にも達し、これは6インチウェハで約2
5枚塗布可能な量に相当するもので、塗布作業毎に少な
くてもこれだけの量が溶解除去され捨てられていた。
(11g to be Solved by the Invention) In the above-mentioned prior art, the resist solution is stored at a low temperature and, at the same time, the resist solution remaining in the pump, filter, and piping is dissolved and removed using a solvent. However, this method cannot completely remove the resist solution remaining in the microscopic gaps or microstructures in the filter and pump, and these residual resists may be heated to room temperature or slightly higher than room temperature due to surrounding heating elements. It had the disadvantage that it deteriorated due to being placed in the environment. In addition, like the resist solution, the solvent for dissolving and removing remains in the filter and pump, so during liquid delivery and application, these residual resist solutions, the solvent, and the resist solution sent from the chemical bottle in the refrigerator unit are mixed. The concentration of the coating solution may change locally, causing the coating film to become uneven.
There was also the problem that the film thickness fluctuated. Furthermore, the combined internal volume of the foreign matter removal filter and precision liquid delivery pump that are conventionally used for highly accurate control of the coating process reaches over 100 cc, which is about 2 cc for a 6-inch wafer.
This amount corresponds to the amount that can be applied to five sheets, and at least this amount is dissolved and removed every time the coating is done and thrown away.

本発明は上記問題点を解決するためなされたもので、室
温で特性が劣化するようなレジスト材料であっても、そ
の劣化を抑制すると同時に、レジスト溶液の局部的な濃
度変化による塗布膜の不拘、膜厚変動の発生を防ぎ、さ
らには使用不能となるレジスト溶液量を最小限にするこ
とのできる塗布装置を提供することを目的とする。
The present invention has been made to solve the above-mentioned problems, and it is possible to suppress the deterioration of resist materials whose properties deteriorate at room temperature, and at the same time prevent the coating film from being affected by local concentration changes in the resist solution. Another object of the present invention is to provide a coating device that can prevent film thickness fluctuations and further minimize the amount of resist solution that becomes unusable.

(課題を解決するための手段) 上記の目的を達成するため、本発明は半導体基板上にレ
ジスト溶液を滴下し回転塗布する塗布装置において、そ
のレジスト溶液をそのレジスト溶液が変質を起こさない
低温で保存する冷蔵ユニットと、そのレジスト溶液が送
液される塗布液供給配管に接続されたフィルターおよび
ポンプをそのレジスト溶液が変質を起こさない低温で保
持する低温収納ユニットと、前記塗布液供給配管内のレ
ジスト溶液を昇温して所定の塗布温度にする恒温ユニッ
トとから構成されることを特徴とする半導体製造用塗布
装置を発明の要旨とするものである。
(Means for Solving the Problems) In order to achieve the above object, the present invention provides a coating device that drips and spin-coats a resist solution onto a semiconductor substrate at a low temperature that does not cause deterioration of the resist solution. A refrigeration unit for storing the resist solution, a low-temperature storage unit that maintains the filter and pump connected to the coating solution supply piping through which the resist solution is fed at a low temperature that does not cause deterioration of the resist solution, and The gist of the invention is a coating apparatus for semiconductor manufacturing, which is characterized by comprising a constant temperature unit that raises the temperature of a resist solution to a predetermined coating temperature.

(作用) 本発明はレジスト溶液をそのレジスト溶液が変質を起こ
さない低温で保存する冷蔵ユニットを備えているので、
冷蔵ユニット内に保存されるレジスト溶液に対して、周
囲温度の影響によるレジスト溶液の変質ならびに溶媒の
揮発によるレジスト溶液の濃度変化が抑制される。また
、低温収納ユニットにより、フィルターおよびポンプも
レジスト溶液が変質を起こさない温度に保持されるので
、フィルターおよびポンプ内部に残存するレジスト溶液
に対しても冷蔵ユニットと同じように周囲温度の影響に
よるレジスト溶液の変質ならびに溶媒揮発によるレジス
ト溶液の濃度変化が抑制される。
(Function) The present invention is equipped with a refrigeration unit that stores the resist solution at a low temperature that does not cause deterioration of the resist solution.
With respect to the resist solution stored in the refrigeration unit, deterioration of the resist solution due to the influence of ambient temperature and change in concentration of the resist solution due to volatilization of the solvent are suppressed. In addition, the filter and pump are kept at a temperature that does not cause deterioration of the resist solution in the low-temperature storage unit, so the resist solution remaining inside the filter and pump will not be affected by the effects of ambient temperature in the same way as the refrigeration unit. Changes in the concentration of the resist solution due to solution deterioration and solvent volatilization are suppressed.

さらに塗布液供給配管内のレジスト溶液を昇温して所定
の塗布温度に高精度に維持できる恒温ユニットを備えて
いるので、塗布時の塗布液の温度が常に一定に保たれる
。これらにより周囲温度に起因するレジスト溶液の変質
、濃度変化および温度変化が回避され、常にウェハ内、
ウェハ間で一定の膜厚、均一性をもった塗布膜厚が得ら
れる。
Furthermore, since the resist solution in the coating liquid supply pipe is equipped with a constant temperature unit that can raise the temperature of the resist solution and maintain it at a predetermined coating temperature with high precision, the temperature of the coating liquid during coating is always kept constant. These avoid deterioration, concentration changes, and temperature changes of the resist solution caused by ambient temperature, and keep the inside of the wafer constant.
A coating film with constant and uniform thickness can be obtained from wafer to wafer.

(実施例) 次に本発明の実施例について説明する。なお、実施例は
一つの例示であって、本発明の精神を逸脱しない範囲で
、種々の変更あるいは改良を行いうろことは言うまでも
ない。
(Example) Next, an example of the present invention will be described. It should be noted that the embodiments are merely illustrative, and it goes without saying that various changes and improvements may be made without departing from the spirit of the present invention.

第1図は本発明の半導体製造用塗布装置の構成図を示す
FIG. 1 shows a configuration diagram of a coating apparatus for semiconductor manufacturing according to the present invention.

図において、土は塗布装置、2は薬液瓶、3はノズル、
4は配管、5はフィルター、6はポンプ、7は基板、8
はレジスト溶液、9は冷蔵部、1oは恒温部、11は低
温収納部を示す。
In the figure, soil is a coating device, 2 is a medicine bottle, 3 is a nozzle,
4 is piping, 5 is filter, 6 is pump, 7 is board, 8
9 indicates a resist solution, 9 indicates a refrigerator section, 1o indicates a constant temperature section, and 11 indicates a low temperature storage section.

レジスト溶液8を入れた薬液瓶2は冷蔵部9に保存され
る。冷蔵部9は、冷凍機で冷却され、通常は10℃以下
に保持される。またフィルターおよびポンプを収納した
低温収納部も、同様に冷凍機で冷却され、10℃以下に
保持される。レジスト溶液は、配管4により冷蔵部9か
ら低温収納部11を通して送液され、恒温水により高精
度に制御された恒温部10で塗布温度(23±0.1℃
)に昇温された後、ノズル3より基板上に滴下される。
The drug solution bottle 2 containing the resist solution 8 is stored in the refrigerator section 9. The refrigerator section 9 is cooled by a refrigerator and is normally maintained at 10° C. or lower. Furthermore, the low-temperature storage section housing the filter and pump is similarly cooled by a refrigerator and maintained at 10° C. or lower. The resist solution is sent from the refrigeration section 9 through the low-temperature storage section 11 via piping 4, and is kept at a coating temperature (23±0.1°C) in the constant temperature section 10, which is precisely controlled by constant temperature water.
), and then dropped onto the substrate from the nozzle 3.

この実施例では、低温収納部からほぼノズル先端までの
配管が恒温部内にあり温度制御されている。
In this embodiment, the piping from the low-temperature storage section to almost the tip of the nozzle is located in a constant temperature section and is temperature controlled.

(例)温度を5”Cに保持した冷蔵部にシラプレー社製
5AL−601−ER7レジストを入れた薬液瓶を保管
し、温度を10℃に保持した低温収納部のフィルター、
ポンプを通してレジスト溶液を送液し、恒温部によりレ
ジスト溶液の温度を23℃に昇温した後、ノズルからレ
ジスト溶液を滴下して塗布膜を得た。
(Example) A medicine bottle containing Silapray's 5AL-601-ER7 resist is stored in the refrigerator section whose temperature is maintained at 5"C, and a filter in the low-temperature storage section whose temperature is maintained at 10 degrees Celsius.
The resist solution was fed through a pump, the temperature of the resist solution was raised to 23° C. by a constant temperature section, and then the resist solution was dropped from a nozzle to obtain a coating film.

この実施例のレジストを用いてフィルター、ポンプ内に
2週間レジスト溶液を残存、放置した後塗布した実験に
おいて、従来の冷蔵部のみを備え、低温収納部のない塗
布装置を用いた場合には、ウェハ内、ウェハ間の膜厚変
動は約30%、感度変動は30%あった。一方、本装置
では、膜厚変動、感度変動とも3%以下になった。
In an experiment using the resist of this example, in which the resist solution was left in the filter and pump for two weeks and then coated, when a conventional coating device equipped with only a refrigeration section and no low-temperature storage section was used, The film thickness variation within a wafer and between wafers was approximately 30%, and the sensitivity variation was 30%. On the other hand, with this device, both film thickness variation and sensitivity variation were below 3%.

なお本実施例のレジストの前記塗布温度における特性変
化の程度は低かったが、その程度の著しいものについて
は、塗布後溶剤により残存液を溶解除去することも可能
である。この場合、低温収納部のフィルター、ポンプ内
のレジスト溶液は冷蔵部と同一の温度(10℃)に保持
されているので変質、溶媒揮発が生じることはなく、低
温収納部以降の配管内に残存するレジスト溶液のみを除
去すればよい、また低温収納部以降の配管内には微小間
隙は存在しないので残存溶液は完全に除去される0本実
施例の塗布装置では低温収納部以降ノズルまでの配管長
を2m以下(配管内径3−)に設計してあるので、たと
え溶解除去の必要が生じても除去され使用不能となるレ
ジスト溶液量は20cc以下に抑えられる。
Although the degree of characteristic change of the resist of this example at the coating temperature was low, if the degree of change is significant, it is possible to dissolve and remove the remaining liquid with a solvent after coating. In this case, the filter in the low temperature storage section and the resist solution in the pump are kept at the same temperature (10℃) as the refrigerator section, so there is no deterioration or solvent volatilization, and the resist solution remains in the piping after the low temperature storage section. In addition, since there are no minute gaps in the piping after the low-temperature storage section, the remaining solution can be completely removed. Since the length is designed to be 2 m or less (piping inner diameter 3-), even if it becomes necessary to dissolve and remove the resist solution, the amount of resist solution that is removed and becomes unusable can be suppressed to 20 cc or less.

(発明の効果) 以上説明したように、本発明による塗布装置は半導体基
板上に塗布されるレジスト溶液をそのレジスト溶液が変
質を起こさない低温で保存する冷蔵ユニットと、そのレ
ジスト溶液が送液される塗布液供給配管に接続されたフ
ィルターおよびポンプをそのレジスト溶液が変質を起こ
さない低温で保持する低温収納ユニットと、前記塗布液
供給配管内のレジスト溶液を昇温して所定の塗布温度に
する恒温ユニットとを備えているため、たとえ室温で初
期特性が劣化するようなレジスト材料であっても、装置
内の薬液瓶内に常時そのレジスト溶液を保管して塗布作
業が可能となるばかりでなくフィルターおよびポンプ内
に残存するレジスト溶液についても周囲の温度の影響に
よる材料の変質ならびに溶媒揮発に起因した局部的濃度
変化を抑制し、かつ、塗布液温度に対する周囲の温度変
化の影響も回避できるので塗布膜の不均一、H厚変動を
防いで高寸法精度を保証する塗布工程を実現可能とする
。さらに塗布作業終了後フィルターポンプおよび配管内
に残存して使用不能となるレジスト溶液の量を最小限に
抑えることができるので、使用するレジスト溶液も節約
できる。
(Effects of the Invention) As explained above, the coating apparatus according to the present invention includes a refrigeration unit that stores a resist solution to be coated on a semiconductor substrate at a low temperature that does not cause deterioration of the resist solution, and a refrigerator unit that stores the resist solution to be fed. a low-temperature storage unit that maintains a filter and a pump connected to the coating liquid supply pipe at a low temperature that does not cause deterioration of the resist solution; and a low temperature storage unit that heats the resist solution in the coating liquid supply pipe to a predetermined coating temperature. Since it is equipped with a constant temperature unit, even if the resist material has initial characteristics that deteriorate at room temperature, it is not only possible to keep the resist solution in the chemical bottle inside the device and perform coating work. Regarding the resist solution remaining in the filter and pump, it is possible to suppress material deterioration due to the influence of ambient temperature and local concentration changes due to solvent volatilization, and also avoid the influence of ambient temperature changes on the coating solution temperature. To realize a coating process that guarantees high dimensional accuracy by preventing non-uniformity of the coating film and variation in H thickness. Furthermore, since the amount of resist solution that remains in the filter pump and piping and becomes unusable after the coating operation is completed can be minimized, the amount of resist solution used can also be saved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の半導体製造用塗布装置の一実施例、第
2図は冷蔵部、恒温部を有する従来の塗布装置の一実施
例、第3図は従来の塗布装置を示す。 1・・・・・半導体製造用塗布装置 2・・・・・薬液瓶 3・・・・・ノズル 4・・・・・配管 5・・・・・フィルター 6・・・・・ポンプ 7・・・・・基板 8・・・・・レジスト溶液 9・・・・・冷蔵部 10・・・・・恒温部 11・・・・・低温収納部 12・・・・・溶削 13・ ・切換弁 第 図 第2図
FIG. 1 shows an embodiment of a coating apparatus for semiconductor manufacturing according to the present invention, FIG. 2 shows an embodiment of a conventional coating apparatus having a refrigeration section and a constant temperature section, and FIG. 3 shows a conventional coating apparatus. 1... Coating device for semiconductor manufacturing 2... Chemical liquid bottle 3... Nozzle 4... Piping 5... Filter 6... Pump 7... ... Substrate 8 ... Resist solution 9 ... Refrigeration section 10 ... Constant temperature section 11 ... Low temperature storage section 12 ... Melting 13 ... Switching valve Figure 2

Claims (1)

【特許請求の範囲】[Claims]  半導体基板上にレジスト溶液を滴下し回転塗布する塗
布装置において、そのレジスト溶液をそのレジスト溶液
が変質を起こさない低温で保存する冷蔵ユニットと、そ
のレジスト溶液が送液される塗布液供給配管に接続され
たフィルターおよびポンプをそのレジスト溶液が変質を
起こさない低温で保持する低温収納ユニットと、前記塗
布液供給配管内のレジスト溶液を昇温して所定の塗布温
度にする恒温ユニットとから構成されることを特徴とす
る半導体製造用塗布装置。
In a coating device that drips and spin-coats a resist solution onto a semiconductor substrate, it is connected to a refrigeration unit that stores the resist solution at a low temperature that does not cause deterioration, and to a coating solution supply pipe through which the resist solution is delivered. A low-temperature storage unit that holds the resist solution filter and pump at a low temperature that does not cause deterioration of the resist solution, and a constant temperature unit that raises the temperature of the resist solution in the coating solution supply pipe to a predetermined coating temperature. A coating device for semiconductor manufacturing characterized by the following.
JP9332590A 1990-04-09 1990-04-09 Coating equipment for manufacturing semiconductor Pending JPH03291913A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9332590A JPH03291913A (en) 1990-04-09 1990-04-09 Coating equipment for manufacturing semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9332590A JPH03291913A (en) 1990-04-09 1990-04-09 Coating equipment for manufacturing semiconductor

Publications (1)

Publication Number Publication Date
JPH03291913A true JPH03291913A (en) 1991-12-24

Family

ID=14079129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9332590A Pending JPH03291913A (en) 1990-04-09 1990-04-09 Coating equipment for manufacturing semiconductor

Country Status (1)

Country Link
JP (1) JPH03291913A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0582896U (en) * 1992-04-14 1993-11-09 東京応化工業株式会社 Liquid continuous supply device
JPH08299880A (en) * 1995-05-09 1996-11-19 Lg Semicon Co Ltd Fluid substance discharging device
JP2001307995A (en) * 2000-04-26 2001-11-02 Nec Corp Correction method of photoresist exposure amount and aligner for which it is employed
JP2005103871A (en) * 2003-09-30 2005-04-21 Ricoh Printing Systems Ltd Ink jet recorder
JP2011091149A (en) * 2009-10-21 2011-05-06 Toppan Printing Co Ltd Method for removing water in resist and coating device for resist
CN102540706A (en) * 2012-01-18 2012-07-04 上海华力微电子有限公司 Method for extending effective use time of photoresist

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0582896U (en) * 1992-04-14 1993-11-09 東京応化工業株式会社 Liquid continuous supply device
JPH08299880A (en) * 1995-05-09 1996-11-19 Lg Semicon Co Ltd Fluid substance discharging device
JP2001307995A (en) * 2000-04-26 2001-11-02 Nec Corp Correction method of photoresist exposure amount and aligner for which it is employed
JP2005103871A (en) * 2003-09-30 2005-04-21 Ricoh Printing Systems Ltd Ink jet recorder
JP4525036B2 (en) * 2003-09-30 2010-08-18 リコープリンティングシステムズ株式会社 Inkjet recording device
JP2011091149A (en) * 2009-10-21 2011-05-06 Toppan Printing Co Ltd Method for removing water in resist and coating device for resist
CN102540706A (en) * 2012-01-18 2012-07-04 上海华力微电子有限公司 Method for extending effective use time of photoresist

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