TW201703168A - Substrate-separating apparatus and substrate-separating method - Google Patents
Substrate-separating apparatus and substrate-separating method Download PDFInfo
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- TW201703168A TW201703168A TW104122741A TW104122741A TW201703168A TW 201703168 A TW201703168 A TW 201703168A TW 104122741 A TW104122741 A TW 104122741A TW 104122741 A TW104122741 A TW 104122741A TW 201703168 A TW201703168 A TW 201703168A
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- 238000000034 method Methods 0.000 title abstract description 14
- 238000007664 blowing Methods 0.000 claims abstract description 100
- 235000012431 wafers Nutrition 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 29
- 238000000926 separation method Methods 0.000 claims description 23
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 230000001788 irregular Effects 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005553 drilling Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002313 adhesive film Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
本發明是有關於一種基板分離裝置與方法，特別是指一種用於分離矽晶片基板的分離裝置與方法。 The present invention relates to a substrate separation apparatus and method, and more particularly to a separation apparatus and method for separating a tantalum wafer substrate.
目前太陽能電池的製作過程中，欲將一片片的矽晶片載入相關製程設備進行製作處理時，通常會借助吹氣裝置於矽晶片的兩側進行吹氣，以使整疊的矽晶片的最上方那一片與第二片產生分離，之後再以機器手臂吸取最上方的矽晶片，如此可避免整疊矽晶片之間因靜電或其他因素產生之黏片，從而防止因黏片所導致的第二片甚至第三片的矽晶片被帶起而衍生之甩片、破裂的問題。 In the current solar cell manufacturing process, when a piece of tantalum wafer is to be loaded into a related process equipment for processing, it is usually blown on both sides of the tantalum wafer by means of an air blowing device, so that the stack of tantalum wafers is the most The upper piece is separated from the second piece, and then the uppermost silicon wafer is sucked by the robot arm, so as to avoid the adhesive film generated by the static electricity or other factors between the stacked silicon wafers, thereby preventing the first layer due to the adhesive film. Two or even the third wafer of tantalum wafers are brought up to cause the problem of ruthenium and cracking.
然而，現有吹氣方式為兩側氣流直接正對的對吹方式，如此之方式易導致吹出的氣流相互抵消而造成矽晶片無法順利分離的問題產生。而且若使用兩側各以單一股氣流的對吹方式時，因氣流的位置是對應於矽晶片的中央，易使被吹拂而飄浮的矽晶片產生類似翹翹板的傾斜情形，如此也易導致矽晶片之間黏片問題的產生。 However, the existing blowing method is a direct blowing method in which the airflows on both sides are directly opposite, and such a method easily causes the blown airflows to cancel each other to cause a problem that the silicon wafer cannot be smoothly separated. Moreover, if a pairwise blowing method of a single stream of air is used on both sides, since the position of the airflow corresponds to the center of the crucible wafer, the crucible wafer which is blown and floated easily produces a tilting situation similar to the seesaw, which is also likely to result in The problem of the adhesive film between the wafers.
因此，本發明之目的，即在提供一種能確保矽 晶片有效分離而且能使矽晶片維持一定漂浮高度，避免矽晶片傾斜的基板分離裝置與基板分離方法。 Therefore, the object of the present invention is to provide a kind of guarantee The substrate is effectively separated and the crucible wafer is maintained at a certain floating height, and the substrate separation device and the substrate separation method for avoiding the tilting of the wafer are avoided.
於是，本發明基板分離裝置，包含一基座以及 兩吹氣裝置，該兩吹氣裝置分別位於該基座的相對兩側，且每一吹氣裝置具有至少兩出氣口，每一吹氣裝置的該兩出氣口為左右間隔，其中各該吹氣裝置的該兩出氣口用於提供兩道氣流，該兩道氣流之氣流方向相互遠離，且每一吹氣裝置的該兩道氣流之氣流方向，與另一吹氣裝置的該兩道氣流之氣流方向為對稱或至少大致對稱。 Thus, the substrate separation device of the present invention comprises a pedestal and a two air blowing device, the two air blowing devices are respectively located on opposite sides of the base, and each air blowing device has at least two air outlets, and the two air outlets of each air blowing device are left and right intervals, wherein each of the air blowing devices The two air outlets of the air device are used to provide two airflows, the airflow directions of the two airflows are away from each other, and the airflow direction of the two airflows of each air blowing device, and the two airflows of the other air blowing device The direction of the airflow is symmetrical or at least substantially symmetrical.
其中，每一吹氣裝置的出氣口的數量為偶數且 形成位置為左右對稱。 Wherein, the number of air outlets of each air blowing device is an even number The formation position is bilaterally symmetrical.
其中，每一吹氣裝置具有至少兩氣流通道，每 一吹氣裝置的該兩氣流通道分別一一對應相通於該兩出氣口，其中每一吹氣裝置的該兩氣流通道的通道延伸方向彼此相交。 Wherein each air blowing device has at least two air flow channels, each The two air flow passages of an air blowing device respectively correspond to the two air outlets in a one-to-one correspondence, wherein the channel extending directions of the two air flow channels of each air blowing device intersect each other.
其中，該基座具有兩間隔相對且分別鄰近該兩 吹氣裝置的側邊，定義一通過該兩吹氣裝置且垂直於該兩側邊的延伸方向的參考方向，每一道氣流的氣流方向與該參考方向的夾角為15°~30°。 Wherein the pedestal has two spaced opposite and adjacent to the two The side of the air blowing device defines a reference direction through the two air blowing devices and perpendicular to the extending direction of the two side edges, and the air flow direction of each air flow is at an angle of 15° to 30° with the reference direction.
其中，每一道氣流的氣流方向與該參考方向的夾角為15°~20° Wherein, the angle of the airflow of each airflow is 15°~20° from the reference direction.
其中，每一吹氣裝置的所述出氣口的數量大於 兩個且為偶數，每一吹氣裝置的該數個出氣口沿縱向間隔並沿橫向排列成至少兩排且彼此為左右對稱。 Wherein the number of the air outlets of each air blowing device is greater than The two and even numbers, the plurality of air outlets of each air blowing device are longitudinally spaced and arranged in the horizontal direction in at least two rows and are bilaterally symmetrical with each other.
其中，每一吹氣裝置具有四個左右間隔的出氣 口，該四個出氣口中，位於最外側的該兩出氣口的氣流方向相互遠離的程度，大於位於中間的該兩出氣口的氣流方向相互遠離的程度。 Wherein each air blowing device has four air outlets spaced apart from each other In the four air outlets, the airflow directions of the two outer air outlets located at the outermost side are farther away from each other, and the airflow directions of the two air outlets located at the middle are far away from each other.
其中，各該出氣口為縱向延伸的長形孔。 Wherein, each of the air outlets is an elongated hole extending longitudinally.
其中，各該出氣口為長形孔、圓孔、方孔、三角形孔或不規則孔。 Wherein, each of the air outlets is an elongated hole, a circular hole, a square hole, a triangular hole or an irregular hole.
其中，該基座用於承載矽晶片。 Wherein, the susceptor is used to carry a germanium wafer.
本發明基板分離方法，包含：提供一基座；提供一疊矽晶片並置放於該基座上；提供兩吹氣裝置，分別位於該基座的相對兩側，且每一吹氣裝置具有至少兩出氣口，每一吹氣裝置的該兩出氣口為左右間隔，其中各該吹氣裝置的該兩出氣口用於提供兩道氣流，該兩道氣流之氣流方向相互遠離，且每一吹氣裝置的該兩道氣流之氣流方向，與另一吹氣裝置的該兩道氣流之氣流方向為對稱或至少大致對稱；分離矽晶片，其中使每一吹氣裝置的該兩道氣流對稱且斜吹於該疊矽晶片中的上方數片的側邊處，以至少使該疊矽晶片中最上方的兩片矽晶片彼此分離。 The substrate separation method of the present invention comprises: providing a pedestal; providing a stack of dies and placing the susceptor on the pedestal; providing two blowing means respectively on opposite sides of the pedestal, and each of the blowing means has at least Two air outlets, the two air outlets of each air blowing device are left and right intervals, wherein the two air outlets of each air blowing device are used to provide two airflows, the airflow directions of the two airflows are away from each other, and each blow The airflow direction of the two airflows of the air device is symmetrical or at least substantially symmetrical with the airflow direction of the two airflows of the other air blowing device; the silicon wafer is separated, wherein the two airflows of each air blowing device are symmetric The edges of the upper plurality of sheets in the stack of wafers are obliquely blown to at least separate the uppermost two wafers in the stack of wafers from each other.
本發明之功效：即在提供一種基板分離裝置與方法，其主要是使矽晶片的兩對稱側皆分別各以兩道斜吹氣流來吹拂，而且兩側氣流吹拂的方式彼此是彼此對稱或至少大致對稱之設計，因此可使矽晶片有效分離並且可維 持在一定漂浮高度而不傾斜，以避免矽晶片產生黏片的問題。 The effect of the present invention is to provide a substrate separating apparatus and method, which mainly comprises that the two symmetric sides of the tantalum wafer are respectively blown by two oblique blowing air streams, and the air blowing manners on both sides are symmetric with each other or at least A roughly symmetrical design that allows the tantalum wafer to be effectively separated and dimensioned Hold at a certain floating height without tilting to avoid the problem of the adhesive sheet on the wafer.
2‧‧‧基座 2‧‧‧Base
21‧‧‧側邊 21‧‧‧ side
3‧‧‧吹氣裝置 3‧‧‧Blowing device
30‧‧‧氣流通道 30‧‧‧Air passage
301‧‧‧通道延伸方向 301‧‧‧Channel extension direction
31‧‧‧出氣口 31‧‧‧ gas outlet
32‧‧‧氣流 32‧‧‧ airflow
33‧‧‧參考方向 33‧‧‧Reference direction
34‧‧‧氣流通道 34‧‧‧Air passage
341‧‧‧出氣口 341‧‧‧ air outlet
351‧‧‧出氣口 351‧‧‧ air outlet
352‧‧‧出氣口 352‧‧‧ air outlet
353‧‧‧圓孔 353‧‧‧ round hole
354‧‧‧圓孔 354‧‧‧ round hole
361‧‧‧出氣口 361‧‧‧ outlet
362‧‧‧出氣口 362‧‧‧ gas outlet
371‧‧‧氣流通道 371‧‧‧Air passage
372‧‧‧氣流通道 372‧‧‧Air passage
381‧‧‧圓孔 381‧‧‧ round hole
382‧‧‧圓孔 382‧‧‧ round hole
39‧‧‧進氣流道 39‧‧‧Intake runner
4‧‧‧矽晶片 4‧‧‧矽 wafer
θ‧‧‧夾角 Θ‧‧‧ angle
本發明之其他的特徵及功效，將於參照圖式的實施方式中清楚地呈現，其中：圖1是本發明的一第一實施例的俯視示意圖；圖2是本發明的第一實施例的吹氣裝置的立體示意圖；圖3是本發明的第一實施例中的基板受吹氣而分離時的側面示意圖；圖4是本發明的一第二實施例的俯視示意圖；圖5是本發明的一第三實施例的側面示意圖；圖6是本發明的一第四實施例的俯視示意圖；圖7是本發明的第四實施例的吹氣裝置的立體示意圖；圖8是本發明的一第五實施例的俯視示意圖；及圖9是本發明的第五實施例的吹氣裝置的立體示意圖。 Other features and advantages of the present invention will be apparent from the embodiments of the present invention, wherein: Figure 1 is a top plan view of a first embodiment of the present invention; Figure 2 is a first embodiment of the present invention; 3 is a schematic side view of the first embodiment of the present invention when the substrate is separated by blowing; FIG. 4 is a schematic plan view of a second embodiment of the present invention; FIG. Figure 6 is a schematic plan view of a fourth embodiment of the present invention; Figure 7 is a perspective view of a fourth embodiment of the present invention; Figure 8 is a perspective view of the air blowing device of the fourth embodiment of the present invention; A schematic plan view of a fifth embodiment; and FIG. 9 is a perspective view of a gas blowing device according to a fifth embodiment of the present invention.
在本發明被詳細描述之前，應當注意在以下的說明內容中，類似的元件是以相同的編號來表示。 Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same reference numerals.
請參閱圖1、2、3，是本發明基板分離裝置之第一實施例，其中圖1是本實施例的俯視示意圖，圖2是 本實施例的吹氣裝置的立體示意圖，圖3是本實施例中的基板受吹氣而分離時的側面示意圖。該基板分離裝置包含一基座2以及兩吹氣裝置3，該兩吹氣裝置3分別位於該基座2的相對兩側，且每一吹氣裝置3具有至少兩出氣口31，每一吹氣裝置3的該兩出氣口31為左右間隔(可由圖1、2看出)，其中，各該吹氣裝置3的該兩出氣口31用於提供兩道氣流32，該兩道氣流32之氣流方向相互遠離，且每一吹氣裝置3的該兩道氣流32之氣流方向，與另一吹氣裝置3的該兩道氣流32之氣流方向為對稱或至少大致對稱。而且每一吹氣裝置3的出氣口31的數量為偶數且形成位置為左右對稱。於本實施例中，所述基板例如矽晶片4，該基座2用於承載矽晶片4。而且於實施上，每一個出氣口31都會對應相通於一個氣流通道30，該氣流通道30連接一進氣流道39。 1 and 2 are a first embodiment of a substrate separating apparatus of the present invention, wherein FIG. 1 is a top plan view of the embodiment, and FIG. 2 is a schematic view. 3 is a schematic perspective view of the air blowing device of the present embodiment, and FIG. 3 is a schematic side view showing the substrate in the present embodiment separated by blowing. The substrate separating device comprises a base 2 and two blowing devices 3, the two blowing devices 3 are respectively located on opposite sides of the base 2, and each of the blowing devices 3 has at least two air outlets 31, each blowing The two air outlets 31 of the air device 3 are spaced apart from each other (as can be seen from FIGS. 1 and 2), wherein the two air outlets 31 of each of the air blowing devices 3 are used to provide two airflows 32, and the two airflows 32 The airflow directions are remote from each other, and the airflow direction of the two airflows 32 of each air blowing device 3 is symmetrical or at least substantially symmetrical with the airflow direction of the two airflows 32 of the other air blowing device 3. Further, the number of the air outlets 31 of each air blowing device 3 is an even number and the forming position is bilaterally symmetrical. In the present embodiment, the substrate is, for example, a germanium wafer 4, which is used to carry the germanium wafer 4. Moreover, in practice, each air outlet 31 is correspondingly connected to an air flow passage 30, and the air flow passage 30 is connected to an intake air passage 39.
於本實施例中，每一吹氣裝置3的出氣口31的 數量為大於兩個而且是偶數，每一吹氣裝置3的該數個出氣口31沿縱向間隔(如圖2、3)並沿橫向排列成至少兩排而且彼此為左右對稱。 In the present embodiment, the air outlet 31 of each air blowing device 3 The number is greater than two and is even, and the plurality of air outlets 31 of each air blowing device 3 are longitudinally spaced (as shown in Figs. 2, 3) and arranged in at least two rows in the lateral direction and are bilaterally symmetrical with each other.
其中該基座2具有兩間隔相對且分別鄰近該兩 吹氣裝置3的側邊21，定義一通過該兩吹氣裝置3且垂直於該兩側邊21的延伸方向的參考方向33，每一道氣流32的氣流方向與該參考方向33的夾角θ可為15°~30°。較佳地，每一道氣流32的氣流方向與該參考方向33的夾角θ為15°~20°，使各氣流32的斜吹角度適當，以提供良好的 吹拂效果。於實施上，每一吹氣裝置3的該兩氣流通道30分別一一對應相通於該兩出氣口31，其中每一吹氣裝置3的該兩氣流通道30的通道延伸方向301彼此相交，藉此，透過該兩氣流通道30使從對應出氣口31而出的氣流32，彼此成相互遠離之狀態。 Wherein the pedestal 2 has two spaced opposite sides and is adjacent to the two The side edge 21 of the air blowing device 3 defines a reference direction 33 passing through the two air blowing devices 3 and perpendicular to the extending direction of the two side edges 21, and the angle θ between the airflow direction of each airflow 32 and the reference direction 33 can be It is 15°~30°. Preferably, the angle θ between the airflow direction of each airflow 32 and the reference direction 33 is 15°-20°, so that the oblique blowing angle of each airflow 32 is appropriate to provide a good Boasting effect. In practice, the two airflow passages 30 of each air blowing device 3 are respectively corresponding to the two air outlets 31 in a one-to-one correspondence, wherein the channel extending directions 301 of the two airflow passages 30 of each air blowing device 3 intersect each other. Therefore, the airflows 32 from the corresponding air outlets 31 are separated from each other by the two airflow passages 30.
本發明還提供一種基板分離方法，可配合該基 板分離裝置進行。該方法包含：提供一基座2。提供一疊矽晶片4並置放於該基座2上。提供兩吹氣裝置3，分別位於該基座2的相對兩側，且每一吹氣裝置3具有至少兩出氣口31，每一吹氣裝置3的該兩出氣口31為左右間隔，其中各該吹氣裝置3的該兩出氣口31用於提供兩道氣流32，該兩道氣流32之氣流方向相互遠離，且每一吹氣裝置3的該兩道氣流32之氣流方向，與另一吹氣裝置3的該兩道氣流32之氣流方向為對稱或至少大致對稱。分離所述矽晶片4，其中使每一吹氣裝置3的該兩道氣流32對稱且斜吹於該疊矽晶片4中的上方數片的側邊處，以至少使該疊矽晶片4中最上方的兩片矽晶片4彼此分離。於本實施例中，通常會使最上方的三至四片的矽晶片4產生預分離效果。在本發明所述的基板分離方法中，每一道氣流32的氣流方向與該參考方向33的夾角θ如前述，可為15°~30°，較佳地為15°~20°。 The invention also provides a substrate separation method, which can be matched with the base The plate separation device is carried out. The method includes providing a pedestal 2. A stack of wafers 4 is provided and placed on the susceptor 2. Two air blowing devices 3 are provided on opposite sides of the base 2, and each air blowing device 3 has at least two air outlets 31, and the two air outlets 31 of each air blowing device 3 are left and right, wherein each The two air outlets 31 of the air blowing device 3 are used to provide two airflows 32, the airflow directions of the two airflows 32 are away from each other, and the airflow direction of the two airflows 32 of each air blowing device 3, and another The airflow direction of the two air streams 32 of the air blowing device 3 is symmetrical or at least substantially symmetrical. Separating the tantalum wafers 4, wherein the two gas streams 32 of each of the blowing devices 3 are symmetrically and obliquely blown at the sides of the upper plurality of sheets in the stack of wafers 4 to at least the stack of wafers 4 The top two wafers 4 are separated from each other. In the present embodiment, the top three to four wafers 4 are usually subjected to a pre-separation effect. In the substrate separation method of the present invention, the angle θ between the direction of the gas flow of each of the gas streams 32 and the reference direction 33 may be 15° to 30°, preferably 15° to 20°, as described above.
請參閱圖4，圖4是本發明的一第二實施例的俯 視示意圖，有別於圖1第一實施例的出氣口位於不同平面的設計，本實施例中的出氣口31都是位在同一個平面上， 而且透過該兩氣流通道30適當的延伸方向，同樣能使每一吹氣裝置3左側的出氣口31與右側的出氣口31出來的氣流32能彼此遠離。本實施例的每一道氣流32的氣流方向與該參考方向33的夾角θ可為15°~30°；較佳地，夾角θ為15°~20°，可達到與該第一實施例相同的效果。 Please refer to FIG. 4, which is a second embodiment of the present invention. The air outlets 31 of the first embodiment are located on the same plane, and the air outlets 31 of the first embodiment are located on the same plane. Moreover, through the proper extending direction of the two air flow passages 30, the air outlets 31 on the left side of each air blowing device 3 and the air flow 32 from the right air outlet port 31 can be separated from each other. The angle θ between the airflow direction of each airflow 32 and the reference direction 33 in this embodiment may be 15° to 30°; preferably, the angle θ is 15° to 20°, which is the same as the first embodiment. effect.
請參閱圖5，圖5是本發明的一第三實施例的 側面示意圖，其中每一吹氣裝置3具有兩出氣口341與兩氣流通道34，於實施上該兩出氣口341為兩個縱向延伸的長形孔且間隔配置於該吹氣裝置3的左右位置處。 Please refer to FIG. 5, which is a third embodiment of the present invention. A side view, wherein each of the air blowing devices 3 has two air outlets 341 and two air flow passages 34. In practice, the two air outlets 341 are two longitudinally extending elongated holes and are spaced apart from each other in the left and right positions of the air blowing device 3. At the office.
請參閱圖6，圖6是本發明的一第四實施例的 俯視示意圖，其中每一吹氣裝置3具有四個左右間隔的出氣口351、352，該四個出氣口351、352中，位於最外側的該兩出氣口351的氣流方向相互遠離的程度，大於位於中間的該兩出氣口352的氣流方向相互遠離的程度。於本實施例中，各該出氣口351、352為縱向延伸的狹長的長形孔。 Please refer to FIG. 6. FIG. 6 is a fourth embodiment of the present invention. In a schematic plan view, each of the air blowing devices 3 has four air outlets 351 and 352 spaced apart from each other. The air outlets of the two outer air outlets 351 located at the outermost sides of the four air outlets 351 and 352 are far away from each other. The air flow directions of the two air outlets 352 located in the middle are away from each other. In the present embodiment, each of the air outlets 351, 352 is an elongated elongated hole extending longitudinally.
於製作上，當吹氣裝置3的出氣口處於不同的 平面時，也就是出氣口所在的平面相較於吹氣裝置3可被視為一傾斜面，如此，於鑽孔以形成出氣口的製作時，即可採用垂直該平面的鑽孔方式，此垂直鑽孔之方式明顯於加工上會比較好操作與處理，有利於節省製作的時間，同時避免誤差的產生，提昇整體良率。 In the production, when the air outlet of the air blowing device 3 is different In the plane, that is, the plane in which the air outlet is located can be regarded as an inclined surface compared to the air blowing device 3, so that when the drilling is performed to form the air outlet, the drilling method perpendicular to the plane can be adopted. The vertical drilling method is obviously better than the processing and processing, which is beneficial to save the production time, avoid the error and improve the overall yield.
此外，本實施例中的每一出氣口都是位於不同 的平面上，也就是非共平面的設計，藉此在透過上述的鑽 孔方式製作後，可使相鄰且同側的兩個出氣口351、352的氣流方向仍保持有些許夾角，以提供矽晶片4更佳的吹氣分離效果。 In addition, each air outlet in the embodiment is located differently. On the plane, that is, the non-coplanar design, thereby passing through the above drill After the hole mode is formed, the airflow directions of the two adjacent air outlets 351 and 352 can be kept at a slight angle to provide a better air separation effect of the silicon wafer 4.
請參閱圖7，圖7是本發明該第四實施例中的 吹氣裝置3的立體示意圖，其中不同於縱向延伸的狹長的長形孔，出氣口的型態也是可以採用數個圓孔353、354的方式來代替單一個狹長的長形孔。 Please refer to FIG. 7, which is a fourth embodiment of the present invention. A perspective view of the air blowing device 3, wherein unlike the longitudinally elongated elongated elongated holes, the shape of the air outlet can be replaced by a plurality of circular holes 353, 354 instead of a single elongated long hole.
請參閱圖8，是本發明的一第五實施例的俯視 示意圖，有別於圖6第四實施例的出氣口位於不同平面的設計，本實施例中的出氣口361、362都是位在同一個平面上，而為了使左側的出氣口361、右側的出氣口362出來的氣流能彼此遠離，因此於鑽孔製作上，必須採取傾斜於平面的鑽孔方式來處理，採用單一平面的設計，可免去預先形成吹氣裝置3的數個傾斜面的製作過程。當然，於使用上，可評估實際的情況與需求後，來採用圖7第四實施例的多個傾斜平面的方式或是圖8第五實施例的單一個平面的方式。當然，於本實施例中，各該出氣口361、362可為縱向延伸的狹長的長形孔。 Please refer to FIG. 8 , which is a plan view of a fifth embodiment of the present invention. The air outlets 361 and 362 in the embodiment are located on the same plane, and the air outlets 361 and 362 on the left side are arranged on the same plane. The airflows from the air outlets 362 can be separated from each other. Therefore, in the drilling, the drilling method must be adopted to be inclined to the plane, and the single plane design can eliminate the pre-formation of several inclined surfaces of the air blowing device 3. Production process. Of course, in use, after the actual situation and requirements can be evaluated, the manner of multiple inclined planes of the fourth embodiment of FIG. 7 or the single plane of the fifth embodiment of FIG. 8 is adopted. Of course, in this embodiment, each of the air outlets 361, 362 may be an elongated elongated hole extending longitudinally.
此外，於本實施例中，位於同一側且彼此有間 隔的出氣口361或出氣口362的氣流通道371、372，其彼此可為平行，或是維持有夾角的情形，於本實施例的圖8中是以繪出平行來示意。 In addition, in this embodiment, they are located on the same side and have each other The gas outlet passages 371 and 372 of the gas outlet 361 or the gas outlet 362 may be parallel to each other or may be maintained at an angle. In Fig. 8 of the present embodiment, the parallel flow is shown.
請參閱圖9，圖9是本發明該第五實施例中的 吹氣裝置3的立體示意圖，其中不同於縱向延伸的狹長的 長形孔，出氣口的型態也是可以採用數個圓孔381、382的方式來代替單一個狹長的長形孔。 Please refer to FIG. 9, which is a fifth embodiment of the present invention. A schematic view of the air blowing device 3, which is different from the longitudinally elongated The elongated hole and the shape of the air outlet can also be replaced by a plurality of elongated holes 381, 382 instead of a single elongated long hole.
總之，本發明各個實施中的出氣口於實施時也 可以是長形孔、圓孔、方孔、三角形孔或不規則孔。 In short, the air outlets in the various embodiments of the present invention are also implemented It may be an elongated hole, a circular hole, a square hole, a triangular hole or an irregular hole.
此外，本發明中各個實施利的不同設計與態樣 可依需求而相互組合搭配，不限於上述實施例所說明的結構所限制，亦可達到所要的目的與效用。 In addition, different designs and aspects of various implementations of the present invention The combination can be combined with each other according to requirements, and is not limited to the structure described in the above embodiments, and can achieve the desired purpose and utility.
本發明實施例中所提出的每一吹氣裝置3的該 兩道氣流32之氣流方向，與另一吹氣裝置3的該兩道氣流32之氣流方向為對稱或至少大致對稱，其中這個至少大致對稱的意涵即為實質上(substantially)對稱的涵義，也就是實際使用時可能會出現氣流角度上的些許誤差而非百分百完全對稱的情形，但仍然能達到本發明實施例中矽晶片良好分離的效果，也就是並非百分百對稱才能達到本發明所欲的良好分離效果，此種些許誤差的情形也是可以被容許的，同樣是本發明所欲主張保護的特點，故於此說明之。其中，此氣流角度上的些許誤差是指同側的兩道氣流方向的夾角θ，彼此誤差於5度之內。 The same for each air blowing device 3 proposed in the embodiment of the present invention The direction of the flow of the two streams 32 is symmetrical or at least substantially symmetrical with the direction of the streams of the two streams 32 of the other blowing means 3, wherein the meaning of at least substantially symmetrical is substantially symmetrical. That is to say, in actual use, there may be some error in the angle of the airflow instead of 100% complete symmetry, but the effect of good separation of the tantalum wafer in the embodiment of the present invention can still be achieved, that is, it is not 100% symmetrical to achieve this. The good separation effect desired by the invention, such a slight error situation can also be tolerated, and is also a feature claimed in the present invention, and is therefore described herein. The slight error in the angle of the airflow refers to the angle θ between the two airflow directions on the same side, and the error is within 5 degrees of each other.
本發明之功效即在提供一種基板分離裝置，其 主要是使矽晶片的兩對稱側皆分別各以兩道斜吹氣流來吹拂，而且兩側氣流吹拂的方式彼此是對稱或至少大致對稱之設計，因此可使矽晶片有效分離並且可維持在一定漂浮高度而不傾斜，以避免矽晶片產生黏片的問題。 The effect of the present invention is to provide a substrate separation device, The main purpose is to make the two symmetrical sides of the cymbal wafer each blow with two oblique blowing air streams, and the air blowing on both sides is symmetric or at least substantially symmetrical with each other, so that the ytterbium wafer can be effectively separated and can be maintained at a certain level. Floating height without tilting to avoid the problem of the adhesive sheet on the wafer.
惟以上所述者，僅為本發明之實施例而已，當 不能以此限定本發明實施之範圍，凡依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾，皆仍屬本發明專利涵蓋之範圍內。 However, the above is only an embodiment of the present invention, when The scope of the present invention is not limited thereto, and all equivalent changes and modifications made in the scope of the invention and the patent specification are still within the scope of the invention.
2‧‧‧基座 2‧‧‧Base
21‧‧‧側邊 21‧‧‧ side
3‧‧‧吹氣裝置 3‧‧‧Blowing device
30‧‧‧氣流通道 30‧‧‧Air passage
301‧‧‧通道延伸方向 301‧‧‧Channel extension direction
31‧‧‧出氣口 31‧‧‧ gas outlet
32‧‧‧氣流 32‧‧‧ airflow
33‧‧‧參考方向 33‧‧‧Reference direction
39‧‧‧進氣流道 39‧‧‧Intake runner
4‧‧‧矽晶片 4‧‧‧矽 wafer
θ‧‧‧夾角 Θ‧‧‧ angle
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| TW104122741A TWI563586B (en) | 2015-07-14 | 2015-07-14 | Substrate-separating apparatus and substrate-separating method |
| CN201510485571.3A CN106356422B (en) | 2015-07-14 | 2015-08-10 | Substrate separation device and substrate separation method |
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| KR101387519B1 (en) * | 2012-11-01 | 2014-04-24 | 주식회사 유진테크 | Purge chamber and substrate processing apparatus including the same |
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