TW201700709A - Abrasive grindstone - Google Patents
Abrasive grindstone Download PDFInfo
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- TW201700709A TW201700709A TW105113739A TW105113739A TW201700709A TW 201700709 A TW201700709 A TW 201700709A TW 105113739 A TW105113739 A TW 105113739A TW 105113739 A TW105113739 A TW 105113739A TW 201700709 A TW201700709 A TW 201700709A
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- Prior art keywords
- grinding
- average particle
- particle diameter
- wafer
- diamond abrasive
- Prior art date
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- 238000000227 grinding Methods 0.000 claims abstract description 167
- 239000002245 particle Substances 0.000 claims abstract description 48
- 239000010432 diamond Substances 0.000 claims abstract description 32
- 239000006061 abrasive grain Substances 0.000 claims abstract description 30
- 150000001639 boron compounds Chemical class 0.000 claims abstract description 30
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 29
- 239000004575 stone Substances 0.000 claims description 55
- 229910052582 BN Inorganic materials 0.000 claims description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052580 B4C Inorganic materials 0.000 claims description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 53
- 230000007246 mechanism Effects 0.000 description 26
- 238000003860 storage Methods 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000007723 transport mechanism Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10254—Diamond [C]
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
Description
本發明和磨削被加工物之磨削磨石相關。 The invention relates to grinding a grinding stone of a workpiece.
為了磨削半導體製造中所使的基板，使用的是添加了硼化合物的磨削磨石(參照例如，專利文獻1)。因為硼化合物具有固體潤滑性，所以對於因磨削加工而形成之加工點的發熱和磨石的消耗具有抑制效果。 In order to grind the substrate to be used in the semiconductor manufacturing, a grinding stone to which a boron compound is added is used (see, for example, Patent Document 1). Since the boron compound has solid lubricity, it has an inhibitory effect on heat generation at the processing point formed by the grinding process and consumption of the grindstone.
【專利文獻1】特開2012-056013号公報 [Patent Document 1] JP-A-2012-056013
然而，專利文獻1中所示之磨削磨石，在磨削硬質基板(例如，SiC基板)時，因為施加於磨石的加工負荷增大，所以磨石的消耗量也增大，更換頻率變高。另外，在磨削玻璃等之熱傳導差的材料時，為了抑制加工產生之熱 的蓄積，加工速度無法提高。因此，磨削磨石被要求既要良好地保持加工物的加工特性，更要提高生產性。 However, in the grinding grindstone shown in Patent Document 1, when the hard substrate (for example, the SiC substrate) is ground, since the processing load applied to the grindstone is increased, the consumption of the grindstone is also increased, and the frequency of replacement is increased. Becomes high. In addition, when grinding materials with poor heat conductivity such as glass, in order to suppress the heat generated by the processing The accumulation of processing speed cannot be improved. Therefore, the grinding of the grindstone is required to maintain the processing characteristics of the workpiece well and to improve the productivity.
本發明即是有鑑於上述課題而完成的，其目的在於提供一種能夠達成減少加工負荷和長夀命化之至少一者的磨削磨石。 The present invention has been made in view of the above problems, and it is an object of the invention to provide a grinding stone capable of achieving at least one of reducing a processing load and a long life.
依據本發明，所提供的磨削磨石是磨削被加工物的磨削磨石，特徵在於，該磨削磨石以指定的體積比含有鑽石磨粒和硼化合物，且該鑽石磨粒的平均粒徑X為，3μm≦X≦10μm，該硼化合物之對該鑽石磨粒的平均粒徑比Z為0.8≦Z≦3.0。 According to the present invention, there is provided a grinding stone which is a grinding stone for grinding a workpiece, characterized in that the grinding stone contains diamond abrasive grains and a boron compound in a specified volume ratio, and the diamond abrasive grain The average particle diameter X is 3 μm ≦X ≦ 10 μm, and the average particle diameter ratio Z of the boron compound to the diamond abrasive grains is 0.8 ≦ Z ≦ 3.0.
適合的是，磨削磨石的加工對象，即被加工物是SiC晶圓，前述平均粒徑比Z較佳為1.2≦Z≦2.0。 It is preferable that the object to be ground of the grinding stone, that is, the workpiece is a SiC wafer, and the average particle diameter ratio Z is preferably 1.2 ≦Z ≦ 2.0.
本案所請發明的磨削磨石，通過控制相對於鑽石磨粒之粒徑的硼化合物之粒徑(粒徑比)的方式，一方面可以提高加工品質，同時又可以達成磨削磨石之加工負荷的減少、放熱性的提昇、長夀命化(減少消耗量)。 In the grinding stone which is invented in the present invention, by controlling the particle diameter (particle size ratio) of the boron compound with respect to the particle diameter of the diamond abrasive grains, the processing quality can be improved on the one hand, and the grinding stone can be achieved at the same time. Reduction in processing load, improvement in heat release, and long life (reduced consumption).
10‧‧‧磨削裝置 10‧‧‧ grinding device
11‧‧‧第一儲料盒 11‧‧‧First storage box
12‧‧‧第二儲料盒 12‧‧‧Second storage box
13‧‧‧搬出入機構 13‧‧‧ Moving in and out of the institution
15,16‧‧‧搬送機構 15,16‧‧‧Transportation agencies
17~19‧‧‧吸盤工作台 17~19‧‧‧Sucker Workbench
20‧‧‧旋轉工作台 20‧‧‧Rotating table
30,40‧‧‧磨削機構 30,40‧‧‧grinding mechanism
37‧‧‧粗磨削用的磨削磨石 37‧‧‧ Grinding grinding stone for rough grinding
47‧‧‧精磨削用的磨削磨石 47‧‧‧Grinding grinding stones for fine grinding
W‧‧‧晶圓(被加工物) W‧‧‧ Wafer (processed object)
【圖1】圖1為實施態樣之安裝了磨削磨石的磨削裝置之構成例示意圖。 Fig. 1 is a schematic view showing a configuration example of a grinding apparatus equipped with a grinding stone in an embodiment.
【圖2】圖2是相對於粗磨削用之磨削磨石的硼化合物的平均粒徑之消耗率(%)示意圖。 Fig. 2 is a schematic view showing the consumption rate (%) of the average particle diameter of the boron compound with respect to the grinding stone for rough grinding.
【圖3】圖3是相對於粗磨削用之磨削磨石的硼化合物 的平均粒徑之最大磨削荷重(N)示意圖。 [Fig. 3] Fig. 3 is a boron compound relative to a grinding stone for rough grinding Schematic diagram of the maximum grinding load (N) of the average particle size.
關於實施本發明之實施態樣，將邊參照圖式邊詳細地進行說明。本發明並不限於以下之實施態樣所記載的內容。另外，以下所記載的構成要素中，包含了熟習此項技術者能夠容易推知的方案、實質同一的方案。此外，以下所記載的構成可以適當地加以組合。而且，在不脫離本發明要旨的範圍內，可以進行構成的各種省略、置換或變更。 Embodiments of the present invention will be described in detail with reference to the drawings. The present invention is not limited to the contents described in the following embodiments. Further, among the constituent elements described below, a scheme that can be easily inferred by those skilled in the art and substantially the same scheme are included. Further, the configurations described below can be combined as appropriate. Further, various omissions, substitutions, and changes may be made without departing from the scope of the invention.
圖1為實施態樣之安裝了磨削磨石的磨削裝置之構成例示意圖。再者，同圖中之X軸方向是磨削裝置10的寬度方向，Y軸方向是磨削裝置10的深度方向，Z軸方向是鉛直方向。 Fig. 1 is a view showing a configuration example of a grinding apparatus equipped with a grinding stone according to an embodiment. Further, the X-axis direction in the figure is the width direction of the grinding device 10, the Y-axis direction is the depth direction of the grinding device 10, and the Z-axis direction is the vertical direction.
如圖1所示，磨削裝置10具備：收容複數片做為被加工物之晶圓W的第一儲料盒11及第二儲料盒12、兼用做為從第一儲料盒11將晶圓W搬出之搬出機構和將磨削完畢的晶圓W搬入第二儲料盒12之搬入機構的共通的搬出入機構13、執行晶圓W之中心位置對校準的校準機構14、搬送晶圓W的搬送機構15,16、吸引保持晶圓W的三個吸盤工作台17~19、使這幾個吸盤工作台17~19可各自旋轉地予以支持並旋轉的轉盤20、對被保持在各吸盤工作台17~19的晶圓W實施作為加工之磨削處理的加工機構之磨削機構 30,40、將磨削後之晶圓W洗淨的洗淨機構51，和將磨削後之吸盤工作台17~19洗淨的洗淨機構52。 As shown in FIG. 1, the grinding apparatus 10 is provided with a first storage box 11 and a second storage box 12 that accommodate a plurality of wafers W as a workpiece, and is also used as the first storage box 11. The unloading mechanism for carrying out the wafer W and the common loading and unloading mechanism 13 for loading the ground wafer W into the loading mechanism of the second magazine 12, the calibration mechanism 14 for performing the alignment of the center position of the wafer W, and the transfer crystal The transport mechanisms 15 and 16 of the circle W, the three suction cup tables 17 to 19 that suck and hold the wafer W, and the turntables 20 that are supported and rotated by the respective chuck tables 17 to 19 are held at The wafer W of each of the chuck table 17 to 19 is subjected to a grinding mechanism as a processing mechanism for processing the grinding process 30, 40, a cleaning mechanism 51 for cleaning the ground wafer W, and a cleaning mechanism 52 for cleaning the wetted chuck tables 17 to 19.
上述磨削裝置10中，收容於第一儲料盒11的晶圓W藉著搬出入機構13的搬出動作而被搬送到校準機構14，在這裡進行中心校準之後，由搬送機構15搬送載置於吸盤工作台17~19，在同一圖式中是搬送載置於吸盤工作台17上。本實施態樣中的3個吸盤工作台17~19相對於轉盤20在圓周方向呈等間隔地配置，並且裝配成各自都能夠旋轉，同時會伴隨著轉盤20的旋轉而在XY平面上移動的結構。吸盤工作台17~19是在吸引保持著晶圓W的狀態下，旋轉指定的角度，例如，逆時針方向旋轉120度，從而定位到磨削機構30的正下方。 In the above-described grinding apparatus 10, the wafer W accommodated in the first stocker 11 is transported to the calibration mechanism 14 by the carry-out operation of the carry-in/out mechanism 13, and after the center alignment is performed, the transport mechanism 15 transports the load. In the suction cup table 17 to 19, in the same drawing, the transfer is placed on the chuck table 17. The three suction cup tables 17 to 19 in the present embodiment are arranged at equal intervals in the circumferential direction with respect to the turntable 20, and are assembled so as to be rotatable each other, and are moved in the XY plane with the rotation of the turntable 20. structure. The chuck tables 17 to 19 are rotated by a predetermined angle while being held by the wafer W, for example, rotated 120 degrees counterclockwise, and positioned directly below the grinding mechanism 30.
磨削機構30是對保持在吸盤工作台17~19的晶圓W進行粗磨削的構成，並且設置在直立地設於基台21之Y軸方向的端部之壁部22上。磨削機構30被裝配成，受沿著Z軸方向配設在壁部22的一對導軌31所引導，並由靠著馬達32的驅動進行垂直運動之支持部33所支持，且伴隨著支持部33的垂直運動而在Z軸方向上進行垂直運動。磨削機構30具備，使可旋轉地受到支持之心軸34a旋轉的馬達34，和透過輪安裝座35而被裝設在心軸34a的前端以對晶圓W的背面進行磨削之磨削輪36。磨削輪36具有在其下面固著成圓環狀之粗磨削用的磨削磨石37。此外，粗磨削是指，使晶圓W薄化到指定的厚度為止的磨削。 The grinding mechanism 30 is configured to roughly grind the wafer W held by the chuck tables 17 to 19, and is provided on the wall portion 22 which is provided at an end portion of the base 21 in the Y-axis direction. The grinding mechanism 30 is assembled to be guided by a pair of guide rails 31 disposed along the wall portion 22 along the Z-axis direction, and supported by a support portion 33 that is vertically moved by the drive of the motor 32, with support The vertical movement of the portion 33 is vertical in the Z-axis direction. The grinding mechanism 30 includes a motor 34 that rotates the rotatably supported spindle 34a, and a grinding wheel that is attached to the tip end of the spindle 34a by the wheel mount 35 to grind the back surface of the wafer W. 36. The grinding wheel 36 has a grinding stone 37 for rough grinding which is fixed in an annular shape under the grinding wheel 36. Further, the rough grinding refers to grinding to thin the wafer W to a predetermined thickness.
粗磨削的實施方式是，心軸34a受馬達34驅動而 旋轉，磨削輪36因而進行旋轉，並且在Z軸的下方被磨削進給，藉而使得旋轉的磨削磨石37接觸到晶圓W的背面，進而對保持於吸盤工作台17且定位在磨削機構30正下方的晶圓W的背面進行磨削。在此，保持於吸盤工作台17之晶圓W的粗磨削如果結束了，轉盤20會沿著逆時針方向僅僅旋轉指定的角度，藉以將粗磨削過的晶圓W定位到磨削機構40的正下方。 In the coarse grinding embodiment, the mandrel 34a is driven by the motor 34. Rotating, the grinding wheel 36 thus rotates and is grounded under the Z-axis, thereby causing the rotating grinding stone 37 to contact the back side of the wafer W, thereby being held on the suction cup table 17 and positioned Grinding is performed on the back surface of the wafer W directly under the grinding mechanism 30. Here, if the rough grinding of the wafer W held by the chuck table 17 is completed, the turntable 20 will rotate only a predetermined angle in the counterclockwise direction, thereby positioning the rough-ground wafer W to the grinding mechanism. Directly below 40.
磨削機構40是對保持在吸盤工作台17~19的晶圓W進行精磨削的構成，並且被裝配成，受沿著Z軸方向配設在壁部22的一對導軌41所引導，並由靠著馬達42的驅動進行垂直運動之支持部43所支持，且伴隨著支持部43的垂直運動而在Z軸方向上進行垂直運動。磨削機構40具備，使可旋轉地受到支持之心軸44a旋轉的馬達44，和透過輪安裝座45而被裝設在心軸44a的前端以對晶圓W的背面進行磨削之磨削輪46。磨削輪46具有在其下面固著成圓環狀之精磨削用的磨削磨石47。亦即，磨削機構40與磨削機構30的基本構成相同，只有磨削磨石37,47的種類採用的是不同的構成。此外，精磨削是指，使晶圓W薄化到指定的厚度為止，同時將因為粗磨削而在晶圓W的背面產生之磨削痕跡除去的磨削。 The grinding mechanism 40 is configured to finely grind the wafers W held by the chuck tables 17 to 19, and is assembled to be guided by a pair of guide rails 41 disposed on the wall portion 22 along the Z-axis direction. It is supported by the support portion 43 that is vertically moved by the driving of the motor 42, and is vertically moved in the Z-axis direction along with the vertical movement of the support portion 43. The grinding mechanism 40 includes a motor 44 that rotates the rotatably supported spindle 44a, and a grinding wheel that is attached to the tip end of the spindle 44a by the wheel mount 45 to grind the back surface of the wafer W. 46. The grinding wheel 46 has a grinding stone 47 for fine grinding which is fixed in an annular shape under the grinding wheel 46. That is, the grinding mechanism 40 has the same basic configuration as the grinding mechanism 30, and only the types of the grinding stones 37, 47 are of different configurations. Further, the finish grinding refers to grinding which removes the grinding marks generated on the back surface of the wafer W due to rough grinding until the wafer W is thinned to a predetermined thickness.
精磨削的實施方式是，心軸44a受馬達44驅動而旋轉，磨削輪46因而進行旋轉，並且在Z軸的下方被磨削進給，藉而使得旋轉的磨削磨石47接觸到晶圓W的背面，進而對保持於吸盤工作台17且定位在磨削機構40正下方的晶 圓W的背面進行磨削。在此，保持於吸盤工作台17之晶圓W的精磨削如果結束了，轉盤20會沿著逆時針方向僅僅旋轉指定的角度，藉以回復到圖1所示之初期位置。在這個位置上，背面已經被精磨削過的晶圓W由搬送機構16搬送到洗淨機構51，通過洗淨除去磨削屑之後，再藉由搬出入機構13的搬入動作而被搬入第二儲料盒12。此外，洗淨機構52對精磨削過的晶圓W被搬送機構16拿起來而成為閑置狀態的吸盤工作台17進行洗淨。再者，對被保持在其他的吸盤工作台18,19之晶圓W所進行的粗磨削、精磨削，對其他的吸盤工作台18,19所進行之晶圓W的搬出入等，也是配合轉盤20的旋轉位置而同樣地實施。 In the fine grinding embodiment, the spindle 44a is rotated by the motor 44, and the grinding wheel 46 is thus rotated, and is grounded under the Z-axis, thereby causing the rotating grinding stone 47 to be contacted. The back side of the wafer W, and in turn, the crystals held on the chuck table 17 and positioned directly below the grinding mechanism 40 Grinding the back of the circle W. Here, if the finish grinding of the wafer W held by the chuck table 17 is completed, the turntable 20 is rotated by only a predetermined angle in the counterclockwise direction, thereby returning to the initial position shown in FIG. At this position, the wafer W that has been finely grounded on the back surface is transported to the cleaning mechanism 51 by the transport mechanism 16, and after the grinding debris is removed by washing, the loading and unloading mechanism 13 is carried in. Two storage boxes 12. Further, the cleaning mechanism 52 cleans the finely-ground wafer W by the transport mechanism 16 and the idler table 17 in an idle state. Further, coarse grinding and fine grinding performed on the wafer W held by the other chuck tables 18 and 19, and loading and unloading of the wafer W by the other chuck tables 18 and 19, It is also implemented in the same manner in accordance with the rotational position of the turntable 20.
合適的是，用本實施態樣之磨削磨石進行磨削的晶圓W，是含有SiC(碳化矽)的SiC晶圓。SiC晶圓是比用矽構成的晶圓更為硬質的材料。 It is preferable that the wafer W to be ground by the grinding stone of the present embodiment is a SiC wafer containing SiC (tantalum carbide). SiC wafers are a harder material than wafers made of tantalum.
此處，用來對SiC晶圓，即晶圓W，實施粗磨削或精磨削的磨削磨石37,47，是用黏合劑將鑽石磨粒和硼化合物結合起來而構成的。鑽石磨粒是指，天然鑽石、合成鑽石、金屬被覆合成鑽石之至少任1種以上。而，硼化合物是指，B4C(碳化硼)、CBN(立方晶氮化硼)以及HBN(六方晶氮化硼)之至少任1種以上。磨削磨石37,47是以作為黏結劑之陶瓷結合劑、樹脂結合劑以及金屬結合劑之任一者，將鑽石磨粒和硼化合物予以混練燒結，或者利用鍍鎳的方式加以固定而構成的。鑽石磨粒與硼化合物的體積比宜為1：1~1：3。 Here, the grinding grindstones 37, 47 for rough grinding or fine grinding of the SiC wafer, that is, the wafer W, are formed by combining a diamond abrasive grain and a boron compound with a binder. The diamond abrasive grain refers to at least one of natural diamonds, synthetic diamonds, and metal-coated synthetic diamonds. In addition, the boron compound is at least one of B 4 C (boron carbide), CBN (cubic boron nitride), and HBN (hexagonal boron nitride). The grinding stone 37, 47 is a ceramic bond, a resin bond, and a metal bond as a binder, and the diamond abrasive grains and the boron compound are kneaded and sintered, or fixed by nickel plating. of. The volume ratio of the diamond abrasive grains to the boron compound is preferably 1:1 to 1:3.
硼化合物的平均粒徑為Y〔μm〕，鑽石磨粒的平均粒徑為X〔μm〕的情形下，磨削磨石37中，硼化合物之對鑽石磨粒的平均粒徑比Z(=Y/X)為0.8≦Z≦3.0。在此，平均粒徑比Z設定在0.8以上是因為，如果未達0.8，硼化合物作為使磨削磨石37變脆的結構材(填充劑)的功能和作用會變大。另一方面，平均粒徑比Z設定在3.0以下則是因為，如果超過3.0，主要磨粒之鑽石磨粒比起作為磨粒的功能，作為構造材的功能．作用會變得更大，難以對磨削加工做出貢獻。此外，鑽石磨粒的平均粒徑X為3μm≦X≦10μm。在此，鑽石磨粒的平均粒徑X設定在10μm以下是因為，作為比形成有電子器件的矽晶圓更硬質之SiC晶圓的晶圓W之磨削加工用途，使用平均粒徑X在10μm以下的鑽石磨粒是適當的。 When the average particle diameter of the boron compound is Y [μm], and the average particle diameter of the diamond abrasive grains is X [μm], the average particle diameter ratio of the boron compound to the diamond abrasive grains in the grinding stone 37 is Z (= Y/X) is 0.8≦Z≦3.0. Here, the average particle diameter ratio Z is set to 0.8 or more because, if it is less than 0.8, the function and action of the boron compound as a structural material (filler) for making the grinding stone 37 brittle will become large. On the other hand, the average particle diameter ratio Z is set to 3.0 or less because, if it exceeds 3.0, the diamond abrasive grains of the main abrasive grains function as a structural material as compared with the functions as abrasive grains. The effect becomes bigger and it is difficult to contribute to the grinding process. Further, the average particle diameter X of the diamond abrasive grains was 3 μm≦X≦10 μm. Here, the average particle diameter X of the diamond abrasive grains is set to 10 μm or less because the average particle diameter X is used as the grinding processing of the wafer W of the SiC wafer which is harder than the tantalum wafer on which the electronic device is formed. Diamond abrasive grains of 10 μm or less are suitable.
在本實施態樣，用於對SiC晶圓之晶圓W進行粗磨削的磨削磨石37中，鑽石磨粒的平均粒徑X宜為3μm≦X≦10μm。因為在粗磨削用的磨削磨石37中，如果使用平均粒徑X低於3μm的鑽石磨粒，不但進行粗磨削所需的時間會長時間化，同時磨削磨石37會變脆。用於對SiC晶圓之晶圓W進行精磨削的磨削磨石47中，鑽石磨粒的平均粒徑X，作為精磨削用的磨削磨石宜較粗磨削用的磨削磨石平均粒徑為小，例如0.5μm≦X≦1μm。 In the present embodiment, in the grinding stone 37 for rough grinding the wafer W of the SiC wafer, the average particle diameter X of the diamond abrasive grains is preferably 3 μm ≦X ≦ 10 μm. Since the diamond abrasive grains having an average particle diameter X of less than 3 μm are used in the grinding grindstone 37 for rough grinding, not only the time required for the rough grinding is prolonged, but also the grinding of the grindstone 37 becomes brittle. . In the grinding stone 47 for fine grinding the wafer W of the SiC wafer, the average particle diameter X of the diamond abrasive grains is preferably used for coarse grinding as a grinding stone for fine grinding. The average particle size of the grindstone is small, for example, 0.5 μm ≦X ≦ 1 μm.
如上所述，硼化合物之對鑽石磨粒的平均粒徑比Z設定為0.8≦Z≦3.0，鑽石磨粒的平均粒徑X設定為3μm≦X≦10μm，藉此，在磨削晶圓W時，硼化合物之固體潤滑 性的特性將有效地發生作用，可以減少磨削磨石37的加工負荷。從而，因為減少磨削磨石37的加工負荷，所以用磨削磨石37磨削1片晶圓W時，可以減少磨削磨石37的消耗量，結果，就可以達到長夀命化。另外，可以抑制因磨削磨石37所造成之被加工物於磨削加工時在加工點的發熱，可以加快磨削速度，可以提高生產性。從以上內容，磨削裝置10中，磨削磨石37的消耗程度也被壓低，可以降低磨石的更換頻率，可以提高磨削裝置10之磨削加工整體的生產性。由於磨削磨石37的平均粒徑比Z為0.8≦Z≦3.0，故而可以達成減少加工負荷和長夀命化之至少一者。 As described above, the average particle diameter ratio Z of the boron compound to the diamond abrasive grains is set to 0.8 ≦Z ≦ 3.0, and the average particle diameter X of the diamond abrasive grains is set to 3 μm ≦ X ≦ 10 μm, whereby the wafer W is ground. Solid lubrication of boron compounds The properties of the properties will effectively act to reduce the processing load of the grinding stone 37. Therefore, since the processing load of the grinding stone 37 is reduced, when one wafer W is ground by the grinding stone 37, the consumption amount of the grinding stone 37 can be reduced, and as a result, the life can be extended. In addition, it is possible to suppress heat generation at the processing point during the grinding process of the workpiece due to the grinding of the grindstone 37, and it is possible to speed up the grinding speed and improve productivity. From the above, in the grinding device 10, the degree of consumption of the grinding stone 37 is also lowered, the frequency of replacement of the grinding stone can be reduced, and the productivity of the entire grinding process of the grinding device 10 can be improved. Since the average grain size ratio Z of the grinding stone 37 is 0.8 ≦ Z ≦ 3.0, at least one of reducing the processing load and the long life can be achieved.
另外，在本實施態樣中，用於對SiC晶圓之晶圓W進行粗磨削的磨削磨石37，平均粒徑比Z宜為1.2≦Z≦3.0。這種情況下，磨削磨石37可以抑制磨削中的消耗，可以達成長夀命化。 Further, in the present embodiment, the grinding stone 37 for rough grinding the wafer W of the SiC wafer has an average particle diameter ratio Z of 1.2 ≦Z ≦ 3.0. In this case, the grinding of the grindstone 37 can suppress the consumption in grinding, and can achieve a long life.
而且，在本實施態樣中，用於對SiC晶圓之晶圓W進行粗磨削的磨削磨石37，平均粒徑比Z較佳為0.8≦Z≦2.0。這種情況下，磨削磨石37可以達成加工負荷的減少。 Further, in the present embodiment, the grinding stone 37 for rough grinding the wafer W of the SiC wafer has an average particle diameter ratio Z of preferably 0.8 ≦ Z ≦ 2.0. In this case, the grinding of the grindstone 37 can achieve a reduction in the processing load.
此外，在本實施態樣中，用於對SiC晶圓之晶圓W進行粗磨削的磨削磨石37，平均粒徑比Z更佳的是1.2≦Z≦2.0。這種情況下，加工負荷的減少和長夀命化這兩者，磨削磨石37都可以達成。 Further, in the present embodiment, the grinding stone 37 for coarsely grinding the wafer W of the SiC wafer has an average particle diameter of more than 1.3 ≦Z ≦ 2.0. In this case, both the grinding load and the long life can be achieved by grinding the grindstone 37.
接著，本發明的發明人等為了確認本發明的效果，製造出硼化合物之平均粒徑不同的粗磨削用磨削磨石37， 並測定對SiC晶圓之晶圓W進行粗磨削時的磨削磨石37的消耗率和最大磨削荷重。結果示於圖2及圖3。圖2是相對於粗磨削用之磨削磨石的硼化合物的平均粒徑之消耗率(%)示意圖；圖3是相對於粗磨削用之磨削磨石的硼化合物的平均粒徑之最大磨削荷重(N)示意圖。 Then, in order to confirm the effect of the present invention, the inventors of the present invention have produced a rough grinding grindstone 37 having different average particle diameters of boron compounds, The consumption rate and the maximum grinding load of the grinding stone 37 when rough grinding the wafer W of the SiC wafer were measured. The results are shown in Figures 2 and 3. 2 is a schematic view showing the consumption rate (%) of the average particle diameter of the boron compound with respect to the grinding stone for rough grinding; and FIG. 3 is the average particle diameter of the boron compound with respect to the grinding stone for rough grinding. Schematic diagram of the maximum grinding load (N).
在圖2及圖3中所使用的粗磨削用磨削磨石37是採用CBN作為硼化合物，並以主成分為SiO2的黏結劑與鑽石磨粒進行混練燒結而成。在圖2及圖3中所使用的粗磨削用磨削磨石37，鑽石磨粒的平均粒徑X為4μm，硼化合物與鑽石磨粒的體積比為1：1，並且使硼化合物的平均粒徑Y在3μm到20μm之間做變化。 The rough grinding grindstone 37 used in Figs. 2 and 3 is obtained by mixing and sintering a cement having a main component of SiO 2 and a diamond abrasive grain using CBN as a boron compound. In the rough grinding grinding stone 37 used in Figs. 2 and 3, the average particle diameter X of the diamond abrasive grains is 4 μm, the volume ratio of the boron compound to the diamond abrasive grains is 1:1, and the boron compound is made. The average particle diameter Y varies between 3 μm and 20 μm.
圖2及圖3中的橫軸代表硼化合物之平均粒徑Y及平均粒徑比Z。圖2中的縱軸為磨削磨石37的消耗率。此消耗率是相對於實際磨削量之磨削磨石37的消耗量(%)。圖3中的縱軸是粗磨削加工中所承受的荷重之最大值(N)。另外，在圖2及圖3是，製造複數個含有相同平均粒徑Y之硼化合物的平均粒徑Y之粗磨削用磨削磨石37，再測定用各磨削磨石37對作為被加工物之SiC晶圓進行粗磨削時之消耗率與最大磨削荷重。此外，圖2及圖3中是用虛線來表示消耗率與最大磨削荷重的平均值。 The horizontal axis in Figs. 2 and 3 represents the average particle diameter Y and the average particle diameter ratio Z of the boron compound. The vertical axis in Fig. 2 is the consumption rate of the grinding stone 37. This consumption rate is the consumption (%) of the grinding stone 37 with respect to the actual grinding amount. The vertical axis in Fig. 3 is the maximum value (N) of the load that is subjected to the rough grinding process. In addition, in FIGS. 2 and 3, a plurality of coarse grinding grinding stones 37 each having a predetermined average particle diameter Y of a boron compound having the same average particle diameter Y are produced, and 37 pairs of each grinding stone are measured. The consumption rate and the maximum grinding load of the SiC wafer of the workpiece during rough grinding. In addition, in FIGS. 2 and 3, the average value of the consumption rate and the maximum grinding load is indicated by a broken line.
根據圖2可知，平均粒徑比Z設定成1.2以上3.0以下，比起平均粒徑比Z設定成未達1.2或超過3.0的數值時，更能夠將磨削磨石37的消耗率抑制在10%左右以下。另外，依據圖3可知，平均粒徑比Z設定為0.8以上2.0以下，比起平 均粒徑比Z設定成超過2.0的數值時，更能夠抑制最大磨削荷重(亦即，加工負荷的減少)。此外，依據圖2可知，平均粒徑比Z如果設定成未達0.8，磨削磨石37的消耗率會變大。 2, the average particle diameter ratio Z is set to 1.2 or more and 3.0 or less, and when the average particle diameter ratio Z is set to a value of less than 1.2 or more than 3.0, the consumption rate of the grinding stone 37 can be further suppressed to 10 % or less. Further, as can be seen from Fig. 3, the average particle diameter ratio Z is set to be 0.8 or more and 2.0 or less. When the average particle diameter ratio Z is set to a value exceeding 2.0, the maximum grinding load (that is, the reduction in the processing load) can be suppressed more. Further, as is clear from Fig. 2, if the average particle diameter ratio Z is set to less than 0.8, the consumption rate of the grinding stone 37 is increased.
像這樣，依據圖2及圖3可知，磨削磨石37可以藉由將平均粒徑比Z設為0.8以上3.0以下的做法，達成長夀命化和減少加工負荷的至少一者；而透過將平均粒徑比Z設為1.2以上2.0以下，則長夀命化和減少加工負荷這兩者都可以達成。 As described above, it can be seen from FIG. 2 and FIG. 3 that the grinding stone 37 can achieve at least one of long life and reduced processing load by setting the average particle diameter ratio Z to 0.8 or more and 3.0 or less. When the average particle diameter ratio Z is 1.2 or more and 2.0 or less, both the longevity and the reduction of the processing load can be achieved.
另外，在前述實施態樣及實施例中，雖然主要是就磨削磨石37進行記載，但是，本發明亦可應用於精磨削用的磨削磨石47。 Further, in the above-described embodiments and examples, although the grinding grindstone 37 is mainly described, the present invention can also be applied to the grinding grindstone 47 for fine grinding.
10‧‧‧磨削裝置 10‧‧‧ grinding device
11‧‧‧第一儲料盒 11‧‧‧First storage box
12‧‧‧第二儲料盒 12‧‧‧Second storage box
13‧‧‧搬出入機構 13‧‧‧ Moving in and out of the institution
15,16‧‧‧搬送機構 15,16‧‧‧Transportation agencies
17~19‧‧‧吸盤工作台 17~19‧‧‧Sucker Workbench
20‧‧‧旋轉工作台 20‧‧‧Rotating table
30,40‧‧‧磨削機構 30,40‧‧‧grinding mechanism
37‧‧‧粗磨削用的磨削磨石 37‧‧‧ Grinding grinding stone for rough grinding
47‧‧‧精磨削用的磨削磨石 47‧‧‧Grinding grinding stones for fine grinding
W‧‧‧晶圓(被加工物) W‧‧‧ Wafer (processed object)
Claims (4)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-117821 | 2015-06-10 | ||
| JP2015117821A JP6564624B2 (en) | 2015-06-10 | 2015-06-10 | Grinding wheel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201700709A true TW201700709A (en) | 2017-01-01 |
| TWI707027B TWI707027B (en) | 2020-10-11 |
Family
ID=57395693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105113739A TWI707027B (en) | 2015-06-10 | 2016-05-03 | Grinding grindstone |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20160361793A1 (en) |
| JP (1) | JP6564624B2 (en) |
| KR (1) | KR102549249B1 (en) |
| CN (1) | CN106239389A (en) |
| DE (1) | DE102016210001A1 (en) |
| FR (1) | FR3037268B1 (en) |
| TW (1) | TWI707027B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200044726A (en) * | 2018-10-16 | 2020-04-29 | 에스아이씨씨 컴퍼니 리미티드 | Single crystal silicon carbide substrate with high flatness and low damage and its manufacturing method |
| JP7216613B2 (en) * | 2019-05-16 | 2023-02-01 | 株式会社ディスコ | processing equipment |
| CN111300288B (en) * | 2020-04-21 | 2021-11-09 | 郑州磨料磨具磨削研究所有限公司 | Grinding wheel for grinding electronic packaging substrate material and preparation method thereof |
| JP7262864B1 (en) | 2022-09-28 | 2023-04-24 | 株式会社東京ダイヤモンド工具製作所 | Synthetic whetstone, synthetic whetstone assembly, and synthetic whetstone manufacturing method |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4923490A (en) * | 1988-12-16 | 1990-05-08 | General Electric Company | Novel grinding wheels utilizing polycrystalline diamond or cubic boron nitride grit |
| CN1112141A (en) * | 1994-05-19 | 1995-11-22 | 戴延平 | Method for mfg diamond-resin grinding wheel |
| JP3086667B2 (en) * | 1997-04-30 | 2000-09-11 | 大阪ダイヤモンド工業株式会社 | Super abrasive whetstone |
| JP3542520B2 (en) * | 1999-06-01 | 2004-07-14 | 株式会社ノリタケカンパニーリミテド | Vitrified whetstone |
| JP2001009732A (en) * | 1999-06-24 | 2001-01-16 | Noritake Co Ltd | Vitrified bond grinding wheel and manufacture therefor |
| US6705926B2 (en) * | 2001-10-24 | 2004-03-16 | Cabot Microelectronics Corporation | Boron-containing polishing system and method |
| US7097549B2 (en) * | 2001-12-20 | 2006-08-29 | Ppg Industries Ohio, Inc. | Polishing pad |
| JP4116333B2 (en) * | 2002-06-05 | 2008-07-09 | ミネベア株式会社 | Super finishing whetstone |
| US20050210755A1 (en) * | 2003-09-05 | 2005-09-29 | Cho Hyun S | Doubled-sided and multi-layered PCBN and PCD abrasive articles |
| CN100376715C (en) * | 2004-12-08 | 2008-03-26 | 上海江信超硬材料有限公司 | Composite structure of diamond surface coated with glass, cubic boron nitride and titanium layers and its manufacturing method |
| US7494404B2 (en) * | 2006-02-17 | 2009-02-24 | Chien-Min Sung | Tools for polishing and associated methods |
| US8398462B2 (en) * | 2008-02-21 | 2013-03-19 | Chien-Min Sung | CMP pads and method of creating voids in-situ therein |
| CN101434827B (en) * | 2008-12-17 | 2012-06-13 | 厦门致力金刚石科技股份有限公司 | Grinding medium containing ceramic particle, preparation and use thereof |
| JP2012056013A (en) * | 2010-09-08 | 2012-03-22 | Disco Corp | Grinding wheel |
| JP2012056012A (en) * | 2010-09-08 | 2012-03-22 | Disco Corp | Cutting grinding wheel |
| US9266221B2 (en) * | 2010-10-06 | 2016-02-23 | Saint-Gobain Abrasives, Inc. | Nonwoven composite abrasive comprising diamond abrasive particles |
| JP2012086291A (en) * | 2010-10-18 | 2012-05-10 | Disco Corp | Cutting grinding wheel |
| JP2012200847A (en) * | 2011-03-28 | 2012-10-22 | Noritake Co Ltd | Vitrified superabrasive grain grinding wheel |
| JP5636144B2 (en) * | 2012-01-18 | 2014-12-03 | 株式会社ノリタケカンパニーリミテド | Vitrified super abrasive wheel |
| JP5373171B1 (en) * | 2012-10-20 | 2013-12-18 | 株式会社ナノテム | Grinding wheel and grinding / polishing apparatus using the same |
| JP6225991B2 (en) * | 2013-07-19 | 2017-11-15 | 国立大学法人 名古屋工業大学 | Metal polishing pad and manufacturing method thereof |
| CN103922747B (en) * | 2014-04-30 | 2015-10-21 | 郑州磨料磨具磨削研究所有限公司 | Ceramic bond super-hard material grinding tool is injected into moulding mixture and injection moulding method |
| JP2016147359A (en) * | 2015-02-13 | 2016-08-18 | 株式会社ディスコ | Grinding whetstone |
-
2015
- 2015-06-10 JP JP2015117821A patent/JP6564624B2/en active Active
-
2016
- 2016-05-03 TW TW105113739A patent/TWI707027B/en active
- 2016-06-07 DE DE102016210001.7A patent/DE102016210001A1/en active Pending
- 2016-06-08 CN CN201610403056.0A patent/CN106239389A/en active Pending
- 2016-06-09 US US15/178,104 patent/US20160361793A1/en not_active Abandoned
- 2016-06-09 KR KR1020160071503A patent/KR102549249B1/en active IP Right Grant
- 2016-06-10 FR FR1655344A patent/FR3037268B1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI707027B (en) | 2020-10-11 |
| JP6564624B2 (en) | 2019-08-21 |
| KR102549249B1 (en) | 2023-06-28 |
| FR3037268A1 (en) | 2016-12-16 |
| FR3037268B1 (en) | 2019-09-06 |
| JP2017001136A (en) | 2017-01-05 |
| US20160361793A1 (en) | 2016-12-15 |
| DE102016210001A1 (en) | 2016-12-15 |
| KR20160145500A (en) | 2016-12-20 |
| CN106239389A (en) | 2016-12-21 |
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