DE102016210001A1 - grindstone - Google Patents
grindstone Download PDFInfo
- Publication number
- DE102016210001A1 DE102016210001A1 DE102016210001.7A DE102016210001A DE102016210001A1 DE 102016210001 A1 DE102016210001 A1 DE 102016210001A1 DE 102016210001 A DE102016210001 A DE 102016210001A DE 102016210001 A1 DE102016210001 A1 DE 102016210001A1
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- Germany
- Prior art keywords
- grinding
- grindstone
- wafer
- average particle
- particle diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002245 particle Substances 0.000 claims abstract description 47
- 239000006061 abrasive grain Substances 0.000 claims abstract description 32
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 32
- 239000010432 diamond Substances 0.000 claims abstract description 32
- 150000001639 boron compounds Chemical class 0.000 claims abstract description 30
- 229910052582 BN Inorganic materials 0.000 claims description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052580 B4C Inorganic materials 0.000 claims description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 51
- 229910010271 silicon carbide Inorganic materials 0.000 description 15
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 15
- 238000003754 machining Methods 0.000 description 10
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- 239000004575 stone Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10254—Diamond [C]
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
Ein Schleifstein, der Diamantschleifkörner und eine Borverbindung beinhaltet und der zum Schleifen eines Werkstücks dient, wobei der durchschnittliche Teilchendurchmesser X der Diamantschleifkörner in dem Bereich von 3 μm ≤ X ≤ 10 μm liegt und das Verhältnis Z der durchschnittlichen Teilchendurchmesser der Borverbindung zu den Diamantschleifkörnern 0,8 ≤ Z ≤ 3,0 beträgt. Vorzugsweise ist das Werkstück ein SiC-Wafer und liegt das Verhältnis Z der durchschnittlichen Teilchendurchmesser in dem Bereich von 1,2 ≤ Z ≤ 2,0.A grindstone including diamond abrasive grains and a boron compound and for grinding a workpiece, wherein the average particle diameter X of the diamond abrasive grains is in the range of 3 μm ≦ X ≦ 10 μm, and the ratio Z of the average particle diameter of the boron compound to the diamond abrasive grains is 0, 8 ≤ Z ≤ 3.0. Preferably, the workpiece is a SiC wafer, and the ratio Z of the average particle diameters is in the range of 1.2 ≦ Z ≦ 2.0.
Description
Hintergrund der ErfindungBackground of the invention
Gebiet der ErfindungField of the invention
Die vorliegende Erfindung betrifft einen Schleifstein zum Schleifen eines Werkstücks.The present invention relates to a grindstone for grinding a workpiece.
Beschreibung des Stands der TechnikDescription of the Related Art
Um Substrate, die zur Halbleiterherstellung verwendet werden, zu schleifen, werden auf der Hinzufügung einer Borverbindung basierende Schleifsteine verwendet (siehe z. B. das offengelegte
Zusammenfassung der ErfindungSummary of the invention
Der in dem offengelegten
Dementsprechend ist es ein Ziel der vorliegenden Erfindung, einen Schleifstein bereitzustellen, mit dem eine Verringerung der Bearbeitungslast und/oder eine Verlängerung der Lebensdauer erzielt werden kann.Accordingly, it is an object of the present invention to provide a grindstone with which a reduction of the machining load and / or an extension of the service life can be achieved.
Gemäß einem Aspekt der vorliegenden Erfindung wird ein Schleifstein zum Schleifen eines Werkstücks bereitgestellt, wobei der Schleifstein Diamantschleifkörner und eine Borverbindung in einem vorgegebenen Volumenverhältnis beinhaltet, der durchschnittliche Teilchendurchmesser X der Diamantschleifkörner in dem Bereich von 3 μm ≤ X ≤ 10 μm liegt und das Verhältnis Z der durchschnittlichen Teilchendurchmesser der Borverbindung zu den Diamantschleifkörnern in dem Bereich von 0,8 ≤ Z ≤ 3,0 liegt.According to one aspect of the present invention, there is provided a grindstone for grinding a workpiece, wherein the grindstone includes diamond abrasive grains and a boron compound in a given volume ratio, the average particle diameter X of the diamond abrasive grains is in the range of 3 μm ≦ X ≦ 10 μm, and the ratio Z the average particle diameter of the boron compound to the diamond abrasive grains is in the range of 0.8 ≦ Z ≦ 3.0.
Vorzugsweise ist das Werkstück als ein durch den Schleifstein zu schleifendes Objekt ein SiC-Wafer und liegt das Verhältnis Z der durchschnittlichen Teilchendurchmesser in dem Bereich von 1,2 ≤ Z ≤ 2,0.Preferably, the workpiece as an object to be ground by the grindstone is a SiC wafer, and the ratio Z of the average particle diameters is in the range of 1.2 ≦ Z ≦ 2.0.
Mit dem Schleifstein gemäß der vorliegenden Erfindung ist es möglich, eine Verringerung der Bearbeitungslast an dem Schleifstein, eine Verbesserung der Wärmeabstrahlungseigenschaften und eine Verlängerung der Lebensdauer (eine Verringerung des Verschleißbetrags) des Schleifsteins zu erzielen, während die Qualität der Bearbeitung erhöht wird, indem das Verhältnis des Teilchendurchmessers einer Borverbindung zu dem Teilchendurchmesser der Diamantschleifkörner (Verhältnis der Teilchendurchmesser) geeignet gewählt wird.With the grindstone according to the present invention, it is possible to achieve a reduction in the machining load on the grindstone, an improvement in the heat radiation characteristics, and an extension of life (a reduction in the amount of wear) of the grindstone, while increasing the quality of working by increasing the ratio the particle diameter of a boron compound to the particle diameter of the diamond abrasive grains (ratio of the particle diameter) is suitably selected.
Die obigen und weitere Ziele, Merkmale und Vorteile der vorliegenden Erfindung und die Art und Weise, diese zu verwirklichen, werden offenkundiger werden und die Erfindung selbst wird am besten verstanden werden, indem die folgende Beschreibung und die angefügten Ansprüche mit Bezug auf die beigefügten Zeichnungen, die eine bevorzugte Ausführungsform der Erfindung zeigen, studiert werden.The above and other objects, features and advantages of the present invention and the manner in which these will be accomplished will become more apparent and the invention itself will best be understood by the following description and appended claims with reference to the accompanying drawings in which: which show a preferred embodiment of the invention.
Kurze Beschreibung der ZeichnungenBrief description of the drawings
Ausführliche Beschreibung der bevorzugten AusführungsformDetailed description of the preferred embodiment
Eine Ausführungsform zum Durchführen der vorliegenden Erfindung wird nachfolgend unter Bezugnahme auf die Zeichnungen im Einzelnen beschrieben. Die vorliegende Erfindung ist nicht auf oder durch den Inhalt der folgenden Beschreibung der Ausführungsform beschränkt. Zusätzlich beinhalten die nachfolgend beschriebenen Komponenten solche, die für den Fachmann ersichtlich sind, und solche, die im Wesentlichen äquivalent zu den beschriebenen sind. Ferner können die folgenden Aufbauten wie erforderlich kombiniert werden. Außerdem kann ein Weglassen, ein Ersetzen oder eine Abwandlung der Aufbauten durchgeführt werden, ohne von dem Umfang des Inhalts der vorliegenden Erfindung abzuweichen.An embodiment for carrying out the present invention will be described below in detail with reference to the drawings. The present invention is not limited to or by the content of the following description of the embodiment. In addition, the components described below include those that will be apparent to those skilled in the art and those that are substantially equivalent to those described. Further, the following constructions can be combined as required. In addition, omission, replacement, or modification of the structures may be made without departing from the scope of the content of the present invention.
[Ausführungsform][Embodiment]
Wie in
Bei der Schleifvorrichtung
Das Schleifmittel
Das Grobschleifen wird wie folgt durchgeführt. Die Schleifscheibe
Das Schleifmittel
Das Feinschleifen wird wie folgt durchgeführt. Die Schleifscheibe
Vorzugsweise ist der durch den Schleifstein gemäß der vorliegenden Erfindung zu schleifende Wafer W ein SiC(Siliziumkarbid)-Wafer, der SiC beinhaltet. Ein SiC-Wafer ist härter als ein Wafer, der Silizium beinhaltet.Preferably, the wafer W to be ground by the grindstone according to the present invention is a SiC (silicon carbide) wafer including SiC. A SiC wafer is harder than a wafer containing silicon.
Hierbei sind die Schleifsteine
Wenn der durchschnittliche Teilchendurchmesser der Borverbindung mit Y [μm] und der durchschnittliche Teilchendurchmesser der Diamantschleifkörner mit X [μm] bezeichnet wird, liegt das Verhältnis Z (= Y/X) der durchschnittlichen Teilchendurchmesser der Borverbindung zu den Diamantschleifkörnern in dem Schleifstein
Bei dieser Ausführungsform liegt der durchschnittliche Teilchendurchmesser X der Diamantschleifkörner in dem Schleifstein
Wie zuvor dargelegt wurde, wird, wenn das Verhältnis Z der durchschnittlichen Teilchendurchmesser der Borverbindung zu den Diamantschleifkörnern in dem Bereich von 0,8 ≤ Z ≤ 3,0 und der durchschnittliche Teilchendurchmesser X der Diamantschleifkörner in dem Bereich von 3 μm ≤ X ≤ 10 μm liegt, die charakteristische Eigenschaft der Festkörperschmierfähigkeit der Borverbindung effektiv entfaltet, wodurch eine Bearbeitungslast an dem Schleifstein
Dementsprechend wird der Grad des Verschleißes des Schleifsteins
Zusätzlich wird bei dieser Ausführungsform bevorzugt, dass der Schleifstein
Außerdem wird bei dieser Ausführungsform weiter bevorzugt, dass der Schleifstein
Außerdem wird bei dieser Ausführungsform ferner bevorzugt, dass der Schleifstein
Anschließend stellten die gegenwärtigen Erfinder Schleifsteine
Die in
Die Achse der X-Koordinaten in
Gemäß
In dieser Weise wurde gemäß
Es ist anzumerken, dass, obwohl bei der zuvor beschriebenen Ausführungsform und dem zuvor beschriebenen Beispiel hauptsächlich der Schleifstein
Die vorliegende Erfindung ist nicht auf die Einzelheiten der oben beschriebenen bevorzugten Ausführungsform beschränkt. Der Umfang der Erfindung wird durch die angefügten Ansprüche definiert und alle Änderungen und Abwandlungen, die innerhalb der Äquivalenz des Umfangs der Ansprüche liegen, werden deshalb von der Erfindung umfasst.The present invention is not limited to the details of the preferred embodiment described above. The scope of the invention is defined by the appended claims, and all changes and modifications which come within the equivalence of the scope of the claims are therefore included in the invention.
ZITATE ENTHALTEN IN DER BESCHREIBUNG QUOTES INCLUDE IN THE DESCRIPTION
Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.
Zitierte PatentliteraturCited patent literature
- JP 2012-056013 [0002, 0003] JP 2012-056013 [0002, 0003]
Claims (4)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2015-117821 | 2015-06-10 | ||
JP2015117821A JP6564624B2 (en) | 2015-06-10 | 2015-06-10 | Grinding wheel |
Publications (1)
Publication Number | Publication Date |
---|---|
DE102016210001A1 true DE102016210001A1 (en) | 2016-12-15 |
Family
ID=57395693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102016210001.7A Pending DE102016210001A1 (en) | 2015-06-10 | 2016-06-07 | grindstone |
Country Status (7)
Country | Link |
---|---|
US (1) | US20160361793A1 (en) |
JP (1) | JP6564624B2 (en) |
KR (1) | KR102549249B1 (en) |
CN (1) | CN106239389A (en) |
DE (1) | DE102016210001A1 (en) |
FR (1) | FR3037268B1 (en) |
TW (1) | TWI707027B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111300288A (en) * | 2020-04-21 | 2020-06-19 | 郑州磨料磨具磨削研究所有限公司 | Grinding wheel for grinding electronic packaging substrate material and preparation method thereof |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20200044726A (en) * | 2018-10-16 | 2020-04-29 | 에스아이씨씨 컴퍼니 리미티드 | Single crystal silicon carbide substrate with high flatness and low damage and its manufacturing method |
JP7216613B2 (en) * | 2019-05-16 | 2023-02-01 | 株式会社ディスコ | processing equipment |
JP7262864B1 (en) | 2022-09-28 | 2023-04-24 | 株式会社東京ダイヤモンド工具製作所 | Synthetic whetstone, synthetic whetstone assembly, and synthetic whetstone manufacturing method |
Citations (1)
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JP2012056013A (en) | 2010-09-08 | 2012-03-22 | Disco Corp | Grinding wheel |
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JP3086667B2 (en) * | 1997-04-30 | 2000-09-11 | 大阪ダイヤモンド工業株式会社 | Super abrasive whetstone |
JP3542520B2 (en) * | 1999-06-01 | 2004-07-14 | 株式会社ノリタケカンパニーリミテド | Vitrified whetstone |
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2015
- 2015-06-10 JP JP2015117821A patent/JP6564624B2/en active Active
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2016
- 2016-05-03 TW TW105113739A patent/TWI707027B/en active
- 2016-06-07 DE DE102016210001.7A patent/DE102016210001A1/en active Pending
- 2016-06-08 CN CN201610403056.0A patent/CN106239389A/en active Pending
- 2016-06-09 US US15/178,104 patent/US20160361793A1/en not_active Abandoned
- 2016-06-09 KR KR1020160071503A patent/KR102549249B1/en active IP Right Grant
- 2016-06-10 FR FR1655344A patent/FR3037268B1/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2012056013A (en) | 2010-09-08 | 2012-03-22 | Disco Corp | Grinding wheel |
Cited By (1)
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CN111300288A (en) * | 2020-04-21 | 2020-06-19 | 郑州磨料磨具磨削研究所有限公司 | Grinding wheel for grinding electronic packaging substrate material and preparation method thereof |
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TWI707027B (en) | 2020-10-11 |
TW201700709A (en) | 2017-01-01 |
JP6564624B2 (en) | 2019-08-21 |
KR102549249B1 (en) | 2023-06-28 |
FR3037268A1 (en) | 2016-12-16 |
FR3037268B1 (en) | 2019-09-06 |
JP2017001136A (en) | 2017-01-05 |
US20160361793A1 (en) | 2016-12-15 |
KR20160145500A (en) | 2016-12-20 |
CN106239389A (en) | 2016-12-21 |
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