TW201643639A - Display device - Google Patents

Abstract

The present disclosure provides a display device, including: a first substrate including a thin film transistor substrate and a scan line. The thin film transistor substrate includes a source electrode, a drain electrode and a channel region disposed between the source electrode and the drain electrode. The first substrate further includes a data line and a touch signal line. The touch signal line is disposed over the data line and is disposed outside the region corresponding to the channel region. The touch signal line does not overlap with the channel region. The display device further includes a second substrate and a display medium disposed between the first substrate and the second substrate.

Description

Display device

The disclosure relates to display devices, and in particular to a display device that can accept touch signals.

With the continuous advancement of technology, various information devices are constantly being introduced, such as mobile phones, tablet computers, ultra-thin notebooks, and satellite navigation. In addition to keyboard or mouse input or manipulation, the use of touch technology to manipulate information devices is a fairly intuitive and popular way to manipulate. Among them, the touch display device has a user-friendly and intuitive input operation interface, so that users of any age can directly select or manipulate the information device with a finger or a stylus.

One of the touch display devices is an in-cell touch display device in which a sensing electrode is disposed in a display panel (for example, a liquid crystal display panel). However, the current in-cell touch display device is not satisfactory in all aspects. For example, in a general touch display device, the touch signal line is disposed on the data line, which may be due to poor design or process variation. The touch signal line overlaps the channel section of the thin film transistor to generate a leakage condition, which causes the touch function to be insensitive or the product display to be problematic.

Therefore, the industry still needs a display device that can further improve the process yield.

The present disclosure provides a display device including: a first substrate including: a scan line extending in a first direction; a thin film transistor including a source electrode, a drain electrode, and a source electrode and a drain electrode a channel region; a data line interleaved with the scan line and extending in the second direction, and the source electrode or the drain electrode is a part of the data line, and the scan line and the data line are electrically connected by the thin film transistor; and the touch signal The line is disposed above the data line and outside the area corresponding to the channel area, and does not overlap with the channel area; the second substrate; and the display medium are disposed between the first substrate and the second substrate.

The disclosure further provides a display device comprising: a first substrate comprising: a scan line extending in a first direction; a thin film transistor comprising a source electrode, a drain electrode, and a source electrode and a drain electrode a channel region; the data line is interleaved with the scan line and extends in the second direction, and the source electrode is a part of the data line, and the scan line and the data line are electrically connected by the thin film transistor; the touch signal line is set at Above the data line and extending in the second direction, the touch signal line includes a trunk portion and a plurality of bent portions, and some of the bent portions are located on a side of the data line away from the thin film transistor, and some of the bent portions are located at the data a side of the line adjacent to the thin film transistor; a second substrate; and a display medium disposed between the first substrate and the second substrate.

In order to make the features and advantages of the present disclosure more comprehensible, the preferred embodiments are described below, and are described in detail below with reference to the accompanying drawings.

100‧‧‧ display device

102‧‧‧First substrate

104‧‧‧ scan line

106‧‧‧Information line

108‧‧‧ pixels

110‧‧‧film transistor

112‧‧‧Source electrode

114‧‧‧汲electrode

114S‧‧‧ surface

116‧‧‧Channel area

118‧‧‧gate electrode

120‧‧‧Touch signal line

120S‧‧‧ upper surface

122‧‧‧Substrate

124‧‧‧ gate dielectric layer

126‧‧‧Semiconductor layer

126R‧‧‧ notch

128‧‧‧First insulation

128S‧‧‧ upper surface

130‧‧‧ openings

132‧‧‧ lining

132S‧‧‧ surface

134‧‧‧Second insulation

136‧‧‧flat layer

136S‧‧‧ upper surface

138‧‧‧ openings

140‧‧‧ openings

142‧‧‧Sensor electrode

144‧‧‧ third insulation layer

146‧‧‧ openings

148‧‧‧ pixel electrodes

150‧‧‧second substrate

152‧‧‧Display media

154‧‧‧Substrate

156‧‧‧Lighting layer

158‧‧‧Color filter layer

160‧‧‧flat layer

162‧‧‧ spacers

164‧‧‧Extension

166‧‧‧ overlap zone

200‧‧‧ display device

300‧‧‧ display device

400‧‧‧ display device

402‧‧‧First substrate

410‧‧‧film transistor

414‧‧‧汲electrode

414S‧‧‧ surface

420‧‧‧Touch signal line

420S‧‧‧ upper surface

422‧‧‧Substrate

424‧‧‧ gate dielectric layer

428‧‧‧First insulation

428S‧‧‧ upper surface

434‧‧‧Second insulation

434S‧‧‧ upper surface

436‧‧‧flat layer

436S‧‧‧ upper surface

438‧‧‧ openings

442‧‧‧Sensor electrode

446‧‧‧ openings

448‧‧‧ pixel electrodes

450‧‧‧second substrate

452‧‧‧Display media

462‧‧‧ spacers

468‧‧‧ lining

500‧‧‧ display device

600‧‧‧ display device

D1‧‧‧ distance

A1‧‧ Direction

A2‧‧‧ direction

W1‧‧‧Width

W2‧‧‧Width

1C-1C’‧‧‧ segment

2B-2B’‧‧‧ segment

4-4’‧‧‧ Segment

1A is a top view of a first substrate of the display device of the embodiment.

FIG. 1B is a top view of a first substrate of a display device according to another embodiment of the present disclosure.

Fig. 1C is a cross-sectional view showing a display device of the embodiment.

2A is a top view of a first substrate of a display device according to another embodiment of the present disclosure.

2B is a cross-sectional view of a display device according to another embodiment of the present disclosure.

Figure 3 is a cross-sectional view showing a display device according to another embodiment of the present invention.

Figure 4 is a cross-sectional view showing a display device according to another embodiment of the present invention.

Figure 5 is a cross-sectional view showing a display device according to another embodiment of the present invention.

Figure 6 is a cross-sectional view showing a display device according to another embodiment of the present invention.

The display device of the present disclosure will be described in detail below. It will be appreciated that the following description provides many different embodiments or examples for implementing the various aspects of the disclosure. The specific elements and arrangements described below are merely illustrative of the disclosure. Of course, these are only used as examples and not as a limitation of the disclosure. Moreover, repeated numbers or labels may be used in different embodiments. These repetitions are merely for the purpose of simplicity and clarity of the disclosure, and are not intended to be a limitation of the various embodiments and/or structures discussed. Furthermore, when a first material layer is on or above a second material layer, the first material layer is in direct contact with the second material layer. Alternatively, it is also possible to have one or more layers of other materials interposed, in which case there may be no direct contact between the first layer of material and the second layer of material.

It must be understood that the components or devices of the drawings can be used by this technical person. Various forms are known to exist. In addition, when a layer is "on" another layer or substrate, it may mean "directly" on another layer or substrate, or a layer on another layer or substrate, or between other layers or substrates. Other layers.

In addition, relative terms such as "lower" or "bottom" and "higher" or "top" may be used in the embodiments to describe the relative relationship of one element of the drawing to another. It will be understood that if the device of the drawing is flipped upside down, the component described on the "lower" side will become the component on the "higher" side.

It will be understood that the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers, and/or portions, such elements, components, and regions. The layers, and/or parts are not to be limited by the terms, and the terms are used to distinguish different elements, components, regions, layers, and/or parts. Therefore, a first element, component, region, layer, and/or portion discussed below may be referred to as a second element, component, region, layer, and/or without departing from the teachings of the disclosure. section.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning meaning It will be understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the relevant art and the context or context of the present disclosure, and should not be in an idealized or overly formal manner. Interpretation, unless specifically defined herein.

The embodiments of the present disclosure can be understood in conjunction with the drawings, and the drawings of the present disclosure are also considered as part of the disclosure. It should be understood that the drawings of the present disclosure are not shown in the form of actual devices and components. The shape of the embodiment may be exaggerated in the drawings The thickness is to clearly show the features of the present disclosure. In addition, the structures and devices in the drawings are schematically illustrated in order to clearly illustrate the features of the disclosure.

In this disclosure, relative terms such as "lower", "upper", "horizontal", "vertical", "lower", "above", "top", "bottom", etc. shall be understood as The orientation shown in the paragraph and related schemas. This relative term is used for convenience of description only, and does not mean that the device described therein is to be manufactured or operated in a particular orientation. Terms such as "joining" and "interconnecting", etc., unless otherwise defined, may mean that two structures are in direct contact, or that two structures are not in direct contact, and other structures are provided here. Between the two structures. The term "joining and joining" may also include the case where both structures are movable or both structures are fixed.

The disclosure of the present invention is such that the touch signal line avoids the channel area adjacent to the thin film transistor, so that the touch signal line does not overlap with the channel area, so the touch signal line can be changed due to process variation. When the offset is generated, the touch signal line is prevented from overlapping with the channel region, thereby causing leakage of the channel region of the thin film transistor and product display problems. Therefore, the disclosed embodiment can improve the yield and display quality of the display device by avoiding the touch signal line from the channel region at the thin film transistor.

FIG. 1A is a top view of the first substrate 102 of the display device 100 of the embodiment. As shown in FIG. 1A, the first substrate 102 includes a scanning line (gate line) 104 extending in the first direction A1, and a data line 106 intersecting the scanning line 104. In other words, the gate line 104 extends along the direction A1, and the direction perpendicular to the perpendicular or orthogonal direction of the scanning line (gate line) extending direction A1 is the direction A2. In addition, the first substrate 102 further includes a thin film transistor 110 disposed corresponding to each of the sub-pixels 108.

The data line 106 provides a source signal to the sub-pixel 108 through the thin film transistor 110, and the scan line (gate line) 104 controls whether the data signal is written to the sub-pixel 108 through the thin film transistor 110.

The thin film transistor 110 includes a source electrode 112, a drain electrode 114, a channel region 116 provided between the source electrode 112 and the drain electrode 114, and a gate electrode 118. The source electrode 112 is part of the data line 106.

In addition, the first substrate 102 further includes a touch signal line 120. The touch signal line 120 is disposed to overlap with the data line 106 except for being adjacent to the thin film transistor 110. The touch signal line 120 is disposed outside the region corresponding to the channel region 116 and does not overlap the channel region 116 adjacent to the thin film transistor 110.

The disclosure of the present invention is such that the touch signal line 120 avoids the channel region 116 adjacent to the thin film transistor 110 so that the touch signal line 120 does not overlap with the channel region 116, so that the touch signal line 120 can be processed by the touch signal line 120. When the variation causes an offset, the touch signal line 120 is prevented from overlapping with the channel region 116 to cause leakage of the channel region 116 of the thin film transistor 110 and product display problems. Therefore, the present embodiment can improve the yield and display quality of the display device 100 by displacing the touch signal line 120 from the channel region 116 at the thin film transistor 110.

In some embodiments, the shortest distance D1 between the touch signal line 120 and the channel region 116 is about 1.5 μm to 5.5 μm, for example, about 2 μm to 3 μm. It should be noted that if the distance D1 is too short, for example, shorter than 1.5 μm, the touch signal line 120 cannot effectively avoid the channel area 116. However, if the distance D1 is too long, for example, longer than 5.5 μm, the area of each sub-pixel is increased, and the number of pixels per unit area is lowered, so that the display quality of the device is lowered.

In addition, in some embodiments, the touch signal line 120 is disposed above the data line 106 and extends along the direction A2. The touch signal line 120 can include a trunk portion and a plurality of bending portions, and the plurality of bending portions. The other side of the data line 106 is away from the thin film transistor 110 (e.g., the left side), and the other portion of the bent portion is located on the side of the data line 106 near the thin film transistor 110 (e.g., the right side). In addition, in some embodiments, the bent portion of the touch signal line has an angle of between 90 and 170 degrees between the bent portion and the trunk portion.

Moreover, in some embodiments, touch signal line 120 has a fixed width. However, in other embodiments, the width of the touch signal line 120 in the adjacent channel region may be smaller than the width of the touch signal line 120 away from the rest of the channel region. In detail, in some embodiments, as shown in FIG. 1B, the horizontal line width W1 of the touch signal line 120 near the channel area 116 is smaller than the horizontal line width W2 away from the channel area.

It should be noted that, in order to clearly describe the disclosure, the subsequent pixel electrodes and the sensing electrodes are not shown in FIG. 1A.

1C is a cross-sectional view of the display device 100 of the present embodiment, which is a cross-sectional view taken along line 1C-1C' of FIG. 1A. As shown in FIG. 1C, the first substrate 102 can include a substrate 122, which can include a glass substrate, a ceramic substrate, a plastic substrate, or any other suitable substrate. The thin film transistor 110 includes a gate electrode 118 disposed on the substrate 122, and a gate dielectric layer 124 disposed on the gate electrode 118 and the transparent substrate 122.

The gate electrode 118 can be one or more metals, metal nitrides, conductive metal oxides, or combinations thereof. The above metals may include, but are not limited to, molybdenum, tungsten, titanium, tantalum, platinum or hafnium. The above metal nitride may include, but is not limited to, molybdenum nitride (molybdenum nitride), tungsten nitride, titanium nitride, and tantalum nitride. The above conductive metal oxide may include, but is not limited to, ruthenium oxide and indium tin oxide. The gate electrode 118 can be formed by the aforementioned sputtering method, resistance heating evaporation method, electron beam evaporation method, or any other suitable deposition method.

The gate dielectric layer 124 can be hafnium oxide, tantalum nitride, hafnium oxynitride, a high-k dielectric material, or any other suitable dielectric material, or a combination thereof. The material of the high-k dielectric material may be a metal oxide, a metal nitride, a metal halide, a transition metal oxide, a transition metal nitride, a transition metal telluride, a metal oxynitride, Metal aluminate, zirconium silicate, zirconium aluminate. For example, the high-k dielectric material may be LaO, AlO, ZrO, TiO, Ta ₂ O ₅ , Y ₂ O ₃ , SrTiO ₃ (STO), BaTiO ₃ (BTO), BaZrO, HfO. ₂ , HfO ₃ , HfZrO, HfLaO, HfSiO, HfSiON, LaSiO, AlSiO, HfTaO, HfTiO, HfTaTiO, HfAlON, (Ba, Sr)TiO ₃ (BST), Al ₂ O ₃ , other high dielectric constants of other suitable materials Dielectric material, or a combination of the above. The gate dielectric layer 124 can be formed by chemical vapor deposition (CVD) or spin coating. The chemical vapor deposition method can be, for example, low pressure chemical vapor deposition (LPCVD). Low temperature chemical vapor deposition (LTCVD), rapid thermal chemical vapor deposition (RTCVD), plasma enhanced chemical vapor deposition (PECVD) Atomic layer deposition (ALD) or other commonly used methods of atomic layer chemical vapor deposition.

The thin film transistor 110 further includes a semiconductor guided on the gate dielectric layer 124. The body layer 126 is overlapped with the gate electrode 118, and the first end of the source electrode 112 and the second end of the drain electrode 114 are respectively disposed on the surface of the semiconductor layer 126, and respectively connected to the semiconductor layer 126. Partial overlap.

The semiconductor layer 126 may be an elemental semiconductor including germanium, germanium; a compound semiconductor including gallium nitride (GaN), silicon carbide, gallium arsenide, gallium phosphide ( Gallium phosphide, indium phosphide, indium arsenide and/or indium antimonide; alloy semiconductors including bismuth alloy (SiGe), phosphorus gallium arsenide (GaAsP), arsenic Aluminum indium alloy (AlInAs), arsenic aluminum gallium alloy (AlGaAs), arsenic gallium alloy (GaInAs), indium gallium alloy (GaInP) and/or phosphorus indium gallium alloy (GaInAsP) or a combination thereof.

The material of the source electrode 112 and the drain electrode 114 may include copper, aluminum, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium, niobium, tantalum, the above alloy, the above combination or other conductive metal. The material may be, for example, a three-layer structure of molybdenum aluminum molybdenum (Mo/Al/Mo) or titanium aluminum titanium (Ti/Al/Ti). The material of the source electrode 112 and the drain electrode 114 can be formed by the above-described sputtering method, resistance heating evaporation method, electron beam evaporation method, or any other suitable deposition method. In some embodiments, the material of the source electrode 112 and the drain electrode 114 may be the same and may be formed by the same deposition step. However, in other embodiments, the source electrode 112 and the drain electrode 114 may be formed by different deposition steps, and the materials thereof may be different from each other.

In the semiconductor layer 126 of this embodiment, the semiconductor layer 126 disposed between the first end and the second end is the channel region 116. That is, the semiconductor layer 126 corresponding to the region of the shortest distance between the source electrode 112 and the drain electrode 114 is the channel region 116.

Continuing to refer to FIG. 1C, the first substrate 102 further includes a first insulating layer 128 covering the thin film transistor 110. The first insulating layer 128 may be tantalum nitride, hafnium oxide, or hafnium oxynitride. The first insulating layer 128 can be formed by chemical vapor deposition (CVD) or spin coating. The chemical vapor deposition method can be, for example, low pressure chemical vapor deposition (LPCVD), low temperature chemistry. Low temperature chemical vapor deposition (LTCVD), rapid thermal chemical vapor deposition (RTCVD), plasma enhanced chemical vapor deposition (PECVD), atom Atomic layer deposition (ALD) or other commonly used methods of layer chemical vapor deposition.

In the embodiment, the touch signal line 120 is disposed on the first insulating layer 128. In addition, the first insulating layer 128 has an opening 130 that exposes a portion of the surface 114S of the drain electrode 114. In addition, the first substrate 102 may further include a liner 132 disposed on a portion of the first insulating layer 128 and connected to the surface 114S of the drain electrode 114.

The material of the touch signal line 120 and the lining layer 132 may include copper, aluminum, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium, tantalum, niobium, the above alloy, the above combination or other conductive metal. The material may be, for example, a three-layer structure of molybdenum aluminum molybdenum (Mo/Al/Mo) or titanium aluminum titanium (Ti/Al/Ti). The material of the touch signal line 120 and the lining layer 132 can be formed by the aforementioned sputtering method, resistance heating evaporation method, electron beam evaporation method, or any other suitable deposition method. In some embodiments, the touch signal line 120 and the liner 132 may be made of the same material and may be formed by the same deposition step. However, in other embodiments, the touch signal line 120 and the lining layer 132 may be formed by different deposition steps, and the materials thereof may be different from each other.

By forming the opening 130 and the lining layer 132, the embodiment can reduce the number of insulating layers required to etch the insulating layer to form the opening when the pixel electrode is electrically connected to the gate electrode, thereby increasing the process. Yield.

Continuing to refer to FIG. 1C, the first substrate 102 further includes a second insulating layer 134 disposed on the first insulating layer 128 and covering the touch signal line 120. The second insulating layer 134 may be tantalum nitride or hafnium oxide. Or ruthenium oxynitride, and can be formed by the aforementioned chemical vapor deposition (CVD) or spin coating method. Then, a flat layer 136 is selectively disposed on the second insulating layer 134. The material of the flat layer 136 may be an organic insulating material (photosensitive resin) or an inorganic insulating material (tantalum nitride, cerium oxide, cerium oxynitride, tantalum carbide, aluminum oxide, or a combination thereof).

In addition, the second insulating layer 134 and the planarization layer 136 may be separately etched by two etching steps to form the opening 138 and the opening 140. The opening 138 exposes a portion of the liner 132 surface 132S. The opening 140 exposes a portion 120S of the upper surface of the touch signal line 120.

Continuing to refer to FIG. 1C , the first substrate 102 further includes a sensing electrode 142 disposed on the second insulating layer 134 (or the flat layer 136 ) and electrically connected to the touch signal line 120 . In detail, the sensing electrode 142 is disposed on the second insulating layer 134 (or the flat layer 136) and extends to the sidewall of the opening 140 and the upper surface 120S of the touch signal line 120.

The sensing electrode 142 may include a transparent conductive material such as indium tin oxide (ITO), tin oxide (SnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), Antimony tin oxide (ATO), antimony zinc oxide (AZO), combinations of the foregoing, or any other suitable transparent conductive oxide material. In addition, the sensing electrode 142 is not only a sensing electrode when the touch is used, but also a common electrode of the display device. The driving method of the touch can be a self-capacitive type. In addition, in some embodiments, one sensing electrode 142 can be electrically connected to the two touch signal lines 120 through two openings 140 (for example, two openings 140 in FIG. 1A), and one sensing electrode 142 is Corresponding to a plurality of sub-pixels 108 of FIG. 1A.

Continuing to refer to FIG. 1C, the first substrate 102 further includes a patterned third insulating layer 144 disposed on the second insulating layer 134 (or on the planarization layer 136) and covering the sensing electrode 142. The third insulating layer 144 may be tantalum nitride, hafnium oxide, or hafnium oxynitride, and may be formed by the aforementioned chemical vapor deposition (CVD) or spin coating method. And the third insulating layer 144 has an opening 146 that connects the opening 138. The flat layer 136 is disposed between the second insulating layer 134 and the third insulating layer 144.

The first substrate 102 further includes a pixel electrode 148 disposed on the third insulating layer 144 and electrically connected to the drain electrode 114. In detail, the pixel electrode 148 is disposed on a portion of the third insulating layer 144 and extends to the sidewalls of the openings 146 and 138 and the surface 132S of the liner 132 to electrically connect the gate electrode 114.

In addition, referring to FIG. 1C , the display device 100 further includes a second substrate 150 disposed opposite to the first substrate 102 and a display medium 152 disposed between the first substrate 102 and the second substrate 150 .

The display device 100 can be a touch liquid crystal display, such as a thin film transistor liquid crystal display. Alternatively, the liquid crystal display can be a Twisted Nematic (TN) type liquid crystal display, a Super Twisted Nematic (STN) type liquid crystal display, or a Double Layer Super Twisted Nematic (DSTN). Liquid crystal display, Vertical Alignment (VA) type liquid crystal display, In-Plane Switching (IPS) type liquid crystal display, Cholesteric type liquid crystal display , Blue Phase type liquid crystal display, marginal electric field effect (FFS) type liquid crystal display or any other suitable liquid crystal display.

In some embodiments, the second substrate 150 is a color filter layer substrate. In detail, the color filter layer substrate may include a substrate 154, a light shielding layer 156 disposed on the substrate 154, a color filter layer 158 disposed on the light shielding layer 156 and the substrate 154, and a light shielding layer 156 and color. The flat layer 160 of the filter layer 158.

The substrate 154 may be, for example, a glass substrate, a ceramic substrate, a plastic substrate, or any other suitable substrate. The light shielding layer 156 may include a black photoresist, a black printing ink, and a black resin. The color filter layer 158 may include a red filter layer, a green filter layer, a blue filter layer, or any other suitable color filter layer.

The display device 100 further includes a spacer 162 disposed between the first substrate 102 and the second substrate 150. The spacer 162 is a main structure for spacing the first substrate 102 and the second substrate 150 to prevent the display device 100. The first substrate 102 is in contact with the second substrate 150 when pressed.

It should be noted that the touch signal lines of the present disclosure may have other configurations in addition to the embodiments shown in FIGS. 1A-1C, as shown in the embodiment of FIG. 2A-2B. The scope of the disclosure is not limited to the embodiment shown in Figures 1A-1C. This section will be explained in detail later.

It should be noted that elements or layers that are the same or similar to those in the foregoing will be denoted by the same or similar reference numerals, and the materials, manufacturing methods and functions thereof are the same or similar to those described above, and therefore will not be described later. Narration.

FIG. 2A is a top view of the first substrate 102 of the display device 200 according to another embodiment of the present disclosure. Fig. 2B is a cross-sectional view showing a display device 200 according to another embodiment, and Fig. 2B is a cross-sectional view taken along line 2B-2B' as shown in Fig. 2A. As shown in FIG. 2A, the display device 200 includes an extension region 164 which is formed by extending a region corresponding to the channel region 116 in a first direction A1, and the extension region 164 forms an overlap with the data line 106. The area 166, wherein the touch signal line 120 is disposed outside the overlap area 166. The difference between the embodiment shown in FIG. 2A-2B and the embodiment of FIG. 1A-1C is that in the extension region 164, the touch signal line 120 does not overlap with the overlap region 166, that is, the touch signal line. It is disposed outside the overlap area 166.

Figure 3 is a cross-sectional view of a display device 300 in accordance with another embodiment of the present disclosure. The difference between the embodiment shown in FIG. 3 and the first embodiment of FIG. 1A-2B is that the display device 300 does not have the flat layer, so that the second insulating layer 134 is in direct contact with the third insulating layer 144.

It should be noted that in addition to the embodiments shown in FIG. 1A-3 above, the sensing electrodes, the pixel electrodes and the touch signal lines of the present disclosure may have other configurations, as shown in the embodiment of FIG. The scope of the disclosure is not limited to the embodiment shown in Figure 1A-3. This section will be explained in detail later.

It should be noted that elements or layers that are the same or similar to those in the foregoing will be denoted by the same or similar reference numerals, and the materials, manufacturing methods and functions thereof are the same or similar to those described above, and therefore will not be described later. Narration.

Fig. 4 is a cross-sectional view showing a display device 400 according to another embodiment of the present invention, which is a cross-sectional view taken along line 4-4' of Fig. 1A. As shown in FIG. 4, the first substrate 402 of the display device 400 includes a substrate 422 and a thin film transistor 410 disposed on the substrate 422. The first substrate 402 further includes a first insulating layer 428 covering the thin film transistor 410.

Then, a flat layer 436 is selectively disposed on the first insulating layer 428. The material of the flat layer 436 may be an organic insulating material (photosensitive resin) or none. Insulation material of the machine (tantalum nitride, tantalum oxide, niobium oxynitride, tantalum carbide, aluminum oxide, or a combination of the above materials).

In addition, the first insulating layer 428 and the planarization layer 436 may be separately etched by two etching steps to form the opening 438. This opening 438 extends downward from the upper surface 436S of the planarization layer 436 to the surface 414S of the drain electrode 414. This opening 438 exposes a portion of the surface 414S of the drain electrode 414.

In addition, as shown in FIG. 4, the touch signal line 420 is disposed on the first insulating layer 428 (or on the flat layer 436). The material of the touch signal line 420 may include copper, aluminum, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium, tantalum, niobium, the above alloy, the above combination or other conductive metal materials, for example, A three-layer structure of molybdenum aluminum molybdenum (Mo/Al/Mo) or titanium aluminum titanium (Ti/Al/Ti).

Continuing to refer to FIG. 4, the pixel electrode 448 is disposed on the first insulating layer 428 and electrically connected to the drain electrode 414. In addition, a portion of the pixel electrode 448 is disposed between the first insulating layer 428 and the touch signal line 420 to increase the adhesion between the touch signal line 420 and the first insulating layer 428. The material of the pixel electrode 448 may include transparent Conductive materials such as indium tin oxide (ITO), tin oxide (SnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), antimony tin oxide (ATO), oxidation Yttrium zinc (AZO), combinations of the above or any other suitable transparent conductive oxide material.

Continuing to refer to FIG. 4 , the display device 400 further includes a second insulating layer 434 disposed on the first insulating layer 428 (or the flat layer 436 ) and covering the touch signal line 420 and the pixel electrode 448 . The flat layer 436 is disposed between the first insulating layer 428 and the second insulating layer 434. The second insulating layer 434 has an opening 446. The display device 400 further includes a sensing electrode 442 disposed on the second insulating layer 434 and electrically connected to the touch signal line 420. In detail, the sensing electrode 442 is disposed on the second insulating layer 434 and electrically connected Contact the control line 420. In addition, the sensing electrode 442 can be used as a common electrode of the display device, and can be used as a common electrode of the display device. The driving mode of the touch can be a self-capacitive type.

The display device 400 further includes a second substrate 450 disposed opposite to the first substrate 402, a display medium 452 disposed between the first substrate 402 and the second substrate 450, and a first substrate 402 and the second substrate 450 disposed between the first substrate 402 and the second substrate 450. Spacer 462.

Figure 5 is a cross-sectional view of a display device 500 in accordance with another embodiment of the present disclosure. The embodiment shown in FIG. 5 differs from the embodiment of FIG. 4 described above in that the first substrate 402 further includes a liner 468 disposed over the pixel electrode 448 in the opening 438.

The material of the lining layer 468 and the touch signal line 420 may include copper, aluminum, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium, tantalum, niobium, alloys thereof, the above-mentioned group, or other conductive properties. The metal material may be, for example, a three-layer structure of molybdenum aluminum molybdenum (Mo/Al/Mo) or titanium aluminum titanium (Ti/Al/Ti). The material of the touch signal line 420 and the lining layer 468 can be formed by the aforementioned sputtering method, resistance heating evaporation method, electron beam evaporation method, or any other suitable deposition method. In some embodiments, the touch signal line 420 and the liner 468 may be the same material and may be formed by the same deposition step. However, in other embodiments, the touch signal line 420 and the lining layer 468 may be formed by different deposition steps, and the materials thereof may be different from each other.

Since the lining layer 468 is disposed on the pixel electrode 448 in the opening 438, the uncontrollable metal can be prevented from remaining in the opening 438 when the touch signal line 420 is formed, or the surface in the opening 438 can be completely intact to avoid the pixel. Electrode 448 is broken within the opening. Since the residual metal of the uncontrollable shape is a three-layer structure of molybdenum aluminum molybdenum or the like, the aluminum in the middle may protrude to short-circuit the pixel electrode 448 and the sensing electrode 442, so the embodiment disclosed in the opening 438 A lining layer 468 is disposed on the pixel electrode 448, It can prevent the above short circuit or disconnection and improve the process yield.

Figure 6 is a cross-sectional view of a display device 600 in accordance with another embodiment of the present disclosure. The difference between the embodiment shown in FIG. 6 and the embodiment of FIGS. 4-5 is that the display device 600 does not have the flat layer described above, so that the first insulating layer 428 is in direct contact with the second insulating layer 434.

In summary, the embodiment of the present disclosure enables the touch signal line to avoid the channel area adjacent to the thin film transistor, so that the touch signal line does not overlap with the channel area, so that the touch signal can be touched. When the line is offset due to process variation, the touch signal line is prevented from overlapping with the channel area, causing leakage of the channel region of the thin film transistor and product display problems. Therefore, the disclosed embodiment can improve the yield and display quality of the display device by avoiding the touch signal line from the channel region at the thin film transistor.

It should be noted that the component sizes, component parameters, and component shapes described above are not limitations of the disclosure. Those of ordinary skill in the art can adjust these settings according to different needs. Further, the display device and the method of manufacturing the same according to the present disclosure are not limited to the state illustrated in FIG. 1A-6. The disclosure may include only any one or more of the features of any one or a plurality of embodiments of Figures 1A-6. In other words, not all illustrated features must be simultaneously implemented in the display device of the present disclosure and its method of manufacture.

Although the embodiments of the present disclosure and its advantages are disclosed above, it should be understood that those skilled in the art can make changes, substitutions, and refinements without departing from the spirit and scope of the disclosure. In addition, the scope of the disclosure is not limited to the processes, machines, manufactures, compositions, devices, methods, and steps in the specific embodiments described in the specification, and those of ordinary skill in the art may disclose the disclosure Understand the current or future development system The process, machine, manufacture, material composition, apparatus, method, and procedure may be used in accordance with the present disclosure as long as they can perform substantially the same function or achieve substantially the same result in the embodiments described herein. Accordingly, the scope of protection of the present disclosure includes the above-described processes, machines, manufacturing, material compositions, devices, methods, and procedures. In addition, each patent application scope constitutes an individual embodiment, and the scope of protection of the disclosure also includes a combination of the scope of the patent application and the embodiments.

100‧‧‧ display device

102‧‧‧First substrate

104‧‧‧ scan line

106‧‧‧Information line

108‧‧‧ pixels

110‧‧‧film transistor

112‧‧‧Source electrode

114‧‧‧汲electrode

116‧‧‧Channel area

118‧‧‧gate electrode

120‧‧‧Touch signal line

126‧‧‧Semiconductor layer

132‧‧‧ lining

138‧‧‧ openings

140‧‧‧ openings

146‧‧‧ openings

D1‧‧‧ distance

A1‧‧ Direction

A2‧‧‧ direction

1C-1C’‧‧‧ segment

4-4’‧‧‧ Segment

Claims (10)

A display device comprising: a first substrate, comprising: a scan line extending along a first direction; a thin film transistor comprising a source electrode, a drain electrode, and the source electrode and the germanium a channel region between the electrode electrodes; a data line interleaved with the scan line and extending in a second direction, and the source electrode or the drain electrode is a part of the data line, and the scan line and the data The wire is electrically connected by the thin film transistor; and a touch signal line is disposed above the data line and outside the region corresponding to the channel region, and does not overlap with the channel region; a second substrate; And a display medium disposed between the first substrate and the second substrate. The display device of claim 1, wherein the shortest distance between the touch signal line and the channel region is 1.5 μm to 5.5 μm. The display device of claim 1, wherein the thin film transistor further comprises: a gate electrode; a gate dielectric layer disposed on the gate electrode; and a semiconductor layer disposed on the gate And the gate electrode is overlapped with the gate electrode, wherein the source electrode and the drain electrode are respectively disposed on a surface of the semiconductor layer, and the first end of the source electrode and the drain electrode One of the second ends overlaps with the semiconductor layer, wherein the semiconductor layer is disposed between the first end and the second end Area. The display device of claim 1, further comprising: an extension region, the extension region extending along the first direction, the extension region forming an overlap region with the data line, wherein The touch signal line extends along the second direction, and a portion of the touch signal line is disposed outside the overlap region and does not overlap the overlap region. The display device of claim 1, wherein the touch signal line extends along the second direction, and the touch signal line has a horizontal line width near the channel area that is smaller than a horizontal line width away from the channel area. The display device of claim 1, wherein the first substrate further comprises: a first insulating layer covering the thin film transistor and exposing a portion of the drain electrode, wherein the touch signal line is disposed on a first insulating layer is disposed on the first insulating layer and exposes a portion of the touch signal line; a sensing electrode is disposed on the second insulating layer and electrically connected to the touch a third insulating layer is disposed on the second insulating layer and exposes a portion of the drain electrode; a pixel electrode is disposed on the third insulating layer and electrically connected to the drain electrode. The display device of claim 1, wherein the first substrate further comprises: a first insulating layer covering the thin film transistor, wherein the touch signal line is disposed on On the first insulating layer, the first insulating layer further includes an opening to expose the drain electrode; a pixel electrode is disposed on the first insulating layer and electrically connected to the drain electrode; An insulating layer is disposed on the first insulating layer and exposes a portion of the touch signal line; and a sensing electrode is disposed on the second insulating layer and electrically connected to the touch signal line. The display device of claim 7, wherein a portion of the pixel electrode is disposed between the touch signal line and the first insulating layer. The display device of claim 7, wherein the first substrate further comprises: a liner disposed in the opening and interposed between the pixel electrode and the second insulating layer. A display device comprising: a first substrate, comprising: a scan line extending along a first direction; a thin film transistor comprising a source electrode, a drain electrode, and the source electrode and the germanium a channel region between the electrode electrodes; a data line interlaced with the scan line and extending in a second direction, wherein the source electrode is a portion of the data line, and the scan line and the data line are through the film The transistor is electrically connected; a touch signal line is disposed above the data line and extends along the second direction, the touch signal line includes a trunk portion and a plurality of bending portions, and a portion The bent portions are located on a side of the data line away from the thin film transistor, and some of the bent portions are located on a side of the data line adjacent to the thin film transistor; a second substrate; and a display medium Provided between the first substrate and the second substrate.