CN102005389A - Method for reducing leakage rate of back channel etch type TFT - Google Patents
Method for reducing leakage rate of back channel etch type TFT Download PDFInfo
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- CN102005389A CN102005389A CN201010509490XA CN201010509490A CN102005389A CN 102005389 A CN102005389 A CN 102005389A CN 201010509490X A CN201010509490X A CN 201010509490XA CN 201010509490 A CN201010509490 A CN 201010509490A CN 102005389 A CN102005389 A CN 102005389A
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- protection layer
- leakage current
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Abstract
The invention discloses a method for reducing the leakage current of a back channel etch type thin film transistor (TFT). In the method, an additional protection layer is arranged on a channel region protection layer after a channel forming process and a channel region protection layer process and covers a channel region of the TFT. Because the additional protection layer is arranged on the channel region protection layer of the TFT after the channel forming process and the channel region protection layer process to cover the channel region of the TFT, some conductive particles can be prevented from being injected or diffused into the channel region protection layer above the TFT channel during the manufacturing of subsequent metal thin films, a floating gate effect is avoided and further the leakage current of the TFT is effectively reduced. By the manufacturing method provided by the invention, the leakage current of a TFT-array can be reduced by about over one order of magnitude.
Description
Technical field
The present invention relates to the making of TFT, relate in particular to a kind of method that reduces back of the body channel-etch type TFT leakage rate.
Background technology
Thin-film transistor TFT (Thin Film Transistor) LCD has a wide range of applications in the modern life, as mobile phone display screen, the display of computer, MP3, MP4 display screen or the like, wherein display frame is even, high-res, do not have that to harass etc. be the key request of high-quality TFT-LCD, and related to this is electrical parameter-leakage current (Ioff) of TFT, leakage current is the important electrical parameter of Weimer triode TFT, if it is excessive, then influence the switching characteristic of TFT, thereby cause TFT-LCD to occur showing uneven, turn white, harass etc. and to show the class defective.
Be directed to the TFT of traditional back of the body channel-etch type structure; its leakage current is higher with respect to raceway groove protection type structure; mainly be to compare with the raceway groove protection type; the thickness of its amorphous silicon is thick partially; in addition, in manufacture process, because back of the body channel-etch type TFT is subjected to isoionic damage in channel etching; and causing in the successive process that because of being exposed to contaminating impurity is arranged in the raceway groove, these all can cause leakage current higher.If can effectively reduce back of the body channel-etch type structure TFT leakage current, the quality of raising TFT-LCD that can be by a relatively large margin improves its competitiveness.
Summary of the invention
The technical problem to be solved in the present invention is to overcome the defective that prior art exists, and a kind of method that reduces back of the body channel-etch type TFT leakage current is provided, and can effectively reduce the leakage current of back of the body channel-etch type TFT.
A kind of method that reduces back of the body channel-etch type TFT leakage current provided by the invention after through raceway groove molding manufacture procedure, channel region protective layer processing procedure, is set up a supplementary protection layer on the channel region protective layer, described supplementary protection layer covers the TFT channel region.
Wherein, described supplementary protection layer pattern is made as the mode of coating, exposure, development.
Wherein, described supplementary protection layer pattern is made and also can be the mode of coating, laser radiation, development.
Wherein, described supplementary protection layer pattern is made the mode that also can adopt mask evaporation or ink jet printing.
Preferably, the manufacturing process of described supplementary protection layer comprises: the mode with slot coated is coated with photoresist on the channel region protective layer, and after heat is dried by the fire, exposure, again with developing, carries out the back baking at last.
Preferably, described photoresist is a positive photoresist, and adopting mass percent is that 2.38% TMAH develops.
Preferably, described photoresist is a negative photoresist, and adopting mass percent is that 0.4% TMAH develops.
Preferably, described supplementary protection layer material therefor is photoresist.
Preferably, the material of described channel region protective layer is selected from any or two or more the combination among SiNx or SiOx, the SiNxOy.
Preferably, described supplementary protection layer should remain at least that the metallic film of all kinds completes in the processing procedure.
Compared with prior art, the present invention has following advantage:
The method of reduction back of the body channel-etch type TFT leakage current provided by the invention; because after through raceway groove molding manufacture procedure, channel region protective layer processing procedure; on TFT channel region protective layer, increase by a supplementary protection layer; cover the TFT channel region; therefore; can stop that some conducting particless when follow-up metal species film is made inject or diffuse into the channel region protective layer of TFT raceway groove top; avoid causing " floating boom " effect; thereby effectively reduce the TFT leakage current; can improve the quality of TFT-LCD, avoid occurring showing inequality, turn white, harass etc. shows the class defective.The method of reduction provided by the invention back of the body channel-etch type TFT leakage current can make TFT-array (tft array) leakage current reduce about one more than the order of magnitude.
Embodiment
Basic design of the present invention is; a kind of method that reduces back of the body channel-etch type TFT leakage current is provided; after through raceway groove molding manufacture procedure, channel region protective layer processing procedure; on the channel region protective layer of TFT, increase by a supplementary protection layer; some conducting particless inject or diffuse into the channel region protective layer of TFT raceway groove top when stopping that follow-up metal species film is made; avoid causing " floating boom " effect, thereby effectively reduce the TFT leakage current.
Concrete grammar of the present invention is as follows:
S1, back of the body channel-etch type TFT finish necessary processing procedure-channel region formation and cover the channel region protective layer at channel region;
S2, on the channel region protective layer, set up a supplementary protection layer again;
Wherein, the material of supplementary protection layer, graphic making and position description are as follows:
1) material selection of supplementary protection layer should possess following condition at least:
1. can not introduce new metallic;
2. help the making of supplementary protection layer pattern;
3. the supplementary protection layer material should its graphic making finish and the metal film forming between processing procedure in be not etched, dissolving etc.;
Except satisfying above-mentioned condition; the material of supplementary protection layer also will be selected different materials according to different manufacture methods; as when adopting the mode of coating, exposure, the mode of developing or coating, laser radiation, development; can select materials such as organic substance such as photoresist for use; as when adopting methods such as mask evaporation, ink jet printing, can select suitable material according to actual conditions.
2) manufacture method of supplementary protection layer pattern, position and area size:
1. the manufacture method of supplementary protection layer pattern;
The manufacture method of supplementary protection layer pattern can be coating, exposure, development; Also can adopt the mode of coating, laser radiation, development, perhaps adopt methods such as mask evaporation, ink jet printing;
Certainly, in actual fabrication, be not limited to above manufacture method.
2. the position of supplementary protection layer pattern:
Supplementary protection layer pattern position should be positioned on the channel region protective layer, and directly over the TFT raceway groove;
3. the area of supplementary protection layer pattern:
The area of supplementary protection layer pattern should be greater than the area of channel region at least, promptly should be able to cover channel region;
3) retention time of supplementary protection layer pattern:
After finishing the graphic making of supplementary protection layer, its figure should remain into whole TFT-array metallic film at least and complete; Also promptly in whole TFT-array metallic film manufacturing process; the supplementary protection layer can not remove always; after whole TFT-array metallic film completes; just can remove the supplementary protection layer or still keep it, so just can prevent to be subjected in the channel protective layer on the channel region pollution of metal impurities.Wherein, the effect of metallic film is not limited to as conductive layer, reflector etc.
Below be elaborated by the method for specific embodiment to reduction of the present invention back of the body channel-etch type TFT leakage current.
Embodiment one
In the present embodiment, adopt the mode that is coated with, exposes again, develops earlier to make the supplementary protection layer pattern, specific as follows:
Back of the body channel-etch type TFT finishes necessary processing procedure-channel region and forms and cover the channel region protective layer thereon; Then the channel region protective layer on channel region increases by a supplementary protection layer again, and concrete steps are:
Adopt positive photoresist on the channel region protective layer, to be coated with in the mode of slot coated, heat baking afterwards, exposure, be that 2.38% TMAH (tetramethyl aqua ammonia) develops with mass percent concentration again, carry out the back baking at last, so just finish the making of supplementary protection layer pattern;
The area of supplementary protection layer pattern is identical with the Island area of graph in the present embodiment, thereby the channel region protective layer is covered fully.
Embodiment two
In the present embodiment, adopt the mode that is coated with, exposes again, develops earlier to make the supplementary protection layer pattern, specific as follows:
Back of the body channel-etch type TFT finishes necessary processing procedure-channel region and forms and cover the channel region protective layer thereon; Then the channel region protective layer on channel region increases by a supplementary protection layer again, and concrete steps are:
Adopt negative photoresist on the channel region protective layer, to be coated with in the mode of slot coated, heat baking afterwards, exposure, be that 0.4% TMAH (tetramethyl aqua ammonia) develops with mass percent concentration again, carry out the back baking at last, so just finish the making of supplementary protection layer pattern;
The area of supplementary protection layer pattern is identical with the Island area of graph in the present embodiment, thereby the channel region protective layer is covered fully.
As seen from the above-described embodiment; a kind of method that reduces back of the body channel-etch type TFT leakage current provided by the invention; because at process raceway groove molding manufacture procedure; behind the channel region protective layer processing procedure; on TFT channel region protective layer, increase by a supplementary protection layer; cover the TFT channel region; therefore; can stop that some conducting particless when follow-up metal species film is made inject or diffuse into the channel region protective layer of TFT raceway groove top; avoid causing " floating boom " effect; thereby effectively reduce the TFT leakage current; manufacture method provided by the invention can make the TFT-array leakage current reduce about one more than the order of magnitude.
The method that adopts the present invention to carry on the back channel-etch type TFT leakage current can not influence the switching characteristic of TFT, avoid TFT-LCD occur showing uneven, turn white, harass etc. and show the class defective.
Only be preferred implementation of the present invention below, should be pointed out that above-mentioned preferred implementation should not be considered as limitation of the present invention, protection scope of the present invention should be as the criterion with claim institute restricted portion.For those skilled in the art, without departing from the spirit and scope of the present invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. a method that reduces back of the body channel-etch type TFT leakage current is characterized in that after through raceway groove molding manufacture procedure, channel region protective layer processing procedure, set up a supplementary protection layer on the channel region protective layer, described supplementary protection layer covers the TFT channel region.
2. the method for reduction back of the body channel-etch type TFT leakage current according to claim 1 is characterized in that the graphic making of described supplementary protection layer comprises coating, exposure, step of developing.
3. the method for reduction back of the body channel-etch type TFT leakage current according to claim 1 is characterized in that the graphic making of described supplementary protection layer comprises coating, laser radiation, step of developing.
4. the method for reduction back of the body channel-etch type TFT leakage current according to claim 1 is characterized in that the graphic making of described supplementary protection layer adopts the mode of mask evaporation or ink jet printing.
5. the method for reduction back of the body channel-etch type TFT leakage current according to claim 1; it is characterized in that the manufacturing process of described supplementary protection layer comprises: the mode with slot coated is coated with photoresist on the channel region protective layer, and after heat is dried by the fire, exposure; develop again, carry out the back baking at last.
6. the method for reduction according to claim 5 back of the body channel-etch type TFT leakage current is characterized in that described photoresist is a positive photoresist, and adopting mass percent is that 2.38% TMAH develops.
7. the method for reduction according to claim 5 back of the body channel-etch type TFT leakage current is characterized in that described photoresist is a negative photoresist, and adopting mass percent is that 0.4% TMAH develops.
8. the method for reduction back of the body channel-etch type TFT leakage current according to claim 1 is characterized in that described supplementary protection layer material therefor is photoresist.
9. the method for reduction back of the body channel-etch type TFT leakage current according to claim 1 is characterized in that the material of described channel region protective layer is selected from any one or two kinds of or two or more combination among SiNx, SiOx, the SiNxOy.
10. the method for reduction according to claim 1 back of the body channel-etch type TFT leakage current is characterized in that, described supplementary protection layer should remain at least that the metallic film of all kinds completes in the processing procedure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201010509490XA CN102005389A (en) | 2010-10-15 | 2010-10-15 | Method for reducing leakage rate of back channel etch type TFT |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010509490XA CN102005389A (en) | 2010-10-15 | 2010-10-15 | Method for reducing leakage rate of back channel etch type TFT |
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| CN102005389A true CN102005389A (en) | 2011-04-06 |
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| CN201010509490XA Pending CN102005389A (en) | 2010-10-15 | 2010-10-15 | Method for reducing leakage rate of back channel etch type TFT |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106249493A (en) * | 2015-06-05 | 2016-12-21 | 群创光电股份有限公司 | Display device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1081023A (en) * | 1992-06-09 | 1994-01-19 | 国际商业机器公司 | Thin-film transistor and active matrix liquid crystal display device |
| CN1578550A (en) * | 2003-07-28 | 2005-02-09 | 友达光电股份有限公司 | Active driving organic electroluminescent display structure |
| CN1655039A (en) * | 2004-02-10 | 2005-08-17 | Nec液晶技术株式会社 | Thin film transistor, liquid crystal display using thin film transistor, and method of manufacturing thin film transistor |
| CN101324733A (en) * | 2008-08-04 | 2008-12-17 | 京东方科技集团股份有限公司 | Electronic paper active substrate and manufacturing method thereof as well as electronic paper display screen |
| CN101533779A (en) * | 2009-04-03 | 2009-09-16 | 北京大学深圳研究生院 | Manufacturing method for film transistor and image display device |
| CN101548389A (en) * | 2006-12-05 | 2009-09-30 | 佳能株式会社 | Bottom gate type thin film transistor, method of manufacturing the same, and display apparatus |
| CN101567378A (en) * | 2008-04-23 | 2009-10-28 | 爱普生映像元器件有限公司 | Solid-state image pickup device and making method thereof |
| CN101794823A (en) * | 2009-02-04 | 2010-08-04 | 索尼公司 | Thin film transistor and display device |
-
2010
- 2010-10-15 CN CN201010509490XA patent/CN102005389A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1081023A (en) * | 1992-06-09 | 1994-01-19 | 国际商业机器公司 | Thin-film transistor and active matrix liquid crystal display device |
| CN1578550A (en) * | 2003-07-28 | 2005-02-09 | 友达光电股份有限公司 | Active driving organic electroluminescent display structure |
| CN1655039A (en) * | 2004-02-10 | 2005-08-17 | Nec液晶技术株式会社 | Thin film transistor, liquid crystal display using thin film transistor, and method of manufacturing thin film transistor |
| CN101548389A (en) * | 2006-12-05 | 2009-09-30 | 佳能株式会社 | Bottom gate type thin film transistor, method of manufacturing the same, and display apparatus |
| CN101567378A (en) * | 2008-04-23 | 2009-10-28 | 爱普生映像元器件有限公司 | Solid-state image pickup device and making method thereof |
| CN101324733A (en) * | 2008-08-04 | 2008-12-17 | 京东方科技集团股份有限公司 | Electronic paper active substrate and manufacturing method thereof as well as electronic paper display screen |
| CN101794823A (en) * | 2009-02-04 | 2010-08-04 | 索尼公司 | Thin film transistor and display device |
| CN101533779A (en) * | 2009-04-03 | 2009-09-16 | 北京大学深圳研究生院 | Manufacturing method for film transistor and image display device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106249493A (en) * | 2015-06-05 | 2016-12-21 | 群创光电股份有限公司 | Display device |
| CN106249493B (en) * | 2015-06-05 | 2019-10-11 | 群创光电股份有限公司 | Display device |
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Application publication date: 20110406 |