CN106249934A - Touch control display apparatus - Google Patents
Touch control display apparatus Download PDFInfo
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- CN106249934A CN106249934A CN201510859102.3A CN201510859102A CN106249934A CN 106249934 A CN106249934 A CN 106249934A CN 201510859102 A CN201510859102 A CN 201510859102A CN 106249934 A CN106249934 A CN 106249934A
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- insulating barrier
- substrate
- electrode
- thickness
- shading region
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
Abstract
The open a kind of touch control display apparatus of the present invention, including: first substrate, there is at least one pixel cell, pixel cell comprises non-shading region and shading region and comprises: transistor, is located on first substrate；First insulating barrier, is located at first substrate and is positioned on transistor；Touching signals line, is located on the first insulating barrier；Second insulating barrier, is located on the first insulating barrier with on touching signals line, and wherein the second insulating barrier has the corresponding non-shading region of recess；And first electrode, it is located on the second insulating barrier and in recess；Second substrate, relative first substrate is arranged；And display medium, it is located between first substrate and second substrate.
Description
Technical field
The present invention relates to a kind of display device, and particularly relate to the display device of a kind of embedded touch.
Background technology
Along with science and technology constantly improves so that various information equipments are constantly weeded out the old and bring forth the new, such as mobile phone, panel computer,
Ultra-thin pen electricity and satellite navigation etc..Except typically inputting with keyboard or mouse or in addition to manipulation, utilizing touch technology to grasp
Control information equipment is a kind of quite intuition and welcome control mode.Wherein, touch control display apparatus has hommization and intuition
The input operation interface changed so that the user of any age level all can directly choose with finger or pointer or manipulation information sets
Standby.
One of which touch control display apparatus is to arrange to sense the interior of electrode in display floater (such as display panels)
Embedded touch-control (in cell touch) display device.But, and current embedded touch display device not everyway order
People is satisfied.
Therefore, industry still needs to a kind of display device that can further promote display quality.
Summary of the invention
The embodiment of the present invention provides a kind of touch control display apparatus, including: first substrate, there is at least one pixel cell, as
Element unit comprises non-shading region and shading region and comprises: transistor, is located on first substrate；First insulating barrier, is located at the first base
Plate and being positioned on transistor；Touching signals line, is located on the first insulating barrier；Second insulating barrier, is located on the first insulating barrier and touches
On control holding wire, wherein the second insulating barrier has the corresponding non-shading region of recess；And first electrode, it is located on the second insulating barrier and recessed
In Kou；Second substrate, relative first substrate is arranged；And display medium, it is located between first substrate and second substrate.
The embodiment of the present invention also provides for a kind of touch control display apparatus, including: first substrate, there is at least one pixel cell,
Pixel cell comprises non-shading region and shading region and comprises: transistor, is located on first substrate；First insulating barrier, is located at first
Substrate and being positioned on transistor；First electrode, is located on the first insulating barrier；Second insulating barrier, is located on the first insulating barrier and
On one electrode；Touching signals line, is located on the second insulating barrier；3rd insulating barrier, is located on the second insulating barrier and covers touch-control letter
Number line, wherein the 3rd insulating barrier has the first recess of corresponding non-shading region；And second electrode, it is located on the 3rd insulating barrier and
In one recess；Second substrate, relative first substrate is arranged；And display medium, it is located between first substrate and second substrate.
For inventive feature and advantage can be become apparent, cited below particularly go out preferred embodiment, and coordinate appended by
Accompanying drawing, is described in detail below.
Accompanying drawing explanation
Figure 1A is the top view of the touch control display apparatus of the embodiment of the present invention；
Figure 1B is the magnified partial view of the region 1B of Figure 1A；
Fig. 2 A is the sectional view drawn along the line segment 2A-2A ' of Figure 1A～Figure 1B；
Fig. 2 B is the sectional view drawn along the line segment 2B-2B ' of Figure 1A～Figure 1B；
The sectional view that Fig. 2 C is drawn along the line segment 2A-2A ' of Figure 1A～Figure 1B by another embodiment of the present invention；
The sectional view that Fig. 3 A is drawn along the line segment 2A-2A ' of Figure 1A～Figure 1B by another embodiment of the present invention；
The sectional view that Fig. 3 B is drawn along the line segment 2B-2B ' of Figure 1A～Figure 1B by another embodiment of the present invention；
The sectional view that Fig. 3 C is drawn along the line segment 2B-2B ' of Figure 1A～Figure 1B by another embodiment of the present invention.
Symbol description
100 display devices；
102 substrates；
104 gate lines；
105 open regions；
106 data wires；
108 pixel cells；
110 transistors；
112 drain electrodes；
114 source electrodes；
114S surface；
116 channel regions；
118 gate electrodes；
120 touching signals lines；
120S upper surface；
The non-shading region of 121A；
121B shading region；
122 first substrates；
124 gate dielectrics；
126 semiconductor layers；
128 first insulating barriers；
130 second insulating barriers；
130S upper surface；
132 openings；
134 pixel electrodes；
136 linings；
138 the 3rd insulating barriers；
138S upper surface；
140 recesses；
142 openings；
144 common electrodes；
146 second substrates；
148 display mediums；
150 substrates；
152 light shield layers；
154 chromatic filter layers；
156 protective layers；
158 septs；
160 linings；
162 openings；
164 the 4th insulating barriers；
164S upper surface；
166 openings；
168 recesses；
200 display devices；
300A display device；
300B display device；
A1 direction；
A2 direction；
T1 thickness；
T2 thickness；
T3 thickness；
T4 thickness；
T5 thickness；
2A-2A ' line segment；
2B-2B ' line segment；
1B region；
D1 the first distance；
D2 second distance.
Detailed description of the invention
Touch control display apparatus below for the embodiment of the present invention elaborates.It is to be understood that following narration carries
For many different embodiments or example, in order to implement the different patterns of the embodiment of the present invention.The specific element of the following stated and
Arrangement mode is only and simply clearly describes the embodiment of the present invention.Certainly, these are only in order to illustrate rather than the limit of the embodiment of the present invention
Fixed.Additionally, the label or sign repeated may be used in different embodiments.These repeat only for simply clearly describing this
Inventive embodiments, does not represent and has any relatedness between different embodiments and/or the structure discussed.Furthermore, when addressing one
First material layer be positioned on one second material layer or on time, the feelings directly contacted including the first material layer and the second material layer
Shape.Or, it is also possible to it is separated with the situation of other material layer one or more, in this case, the first material layer and the second material
May be not directly contacted with between Ceng.
Must be it is to be understood that the element of accompanying drawing or device can exist with the various forms known to this skilled worker.Additionally,
When certain layer other layer or substrate " on " time, it is possible to refer to that " directly ", on other layer or substrate, or refers to that certain layer is at other layer
Or on substrate, or refer to other layer of sandwiched between other layer or substrate.
Additionally, embodiment may use the term of relative property, such as " relatively low " or " bottom " and " higher " or " top ",
To describe the element relativeness for another element of accompanying drawing.It is appreciated that, makes if the device of accompanying drawing is overturn
It turns upside down, then being described the element in " relatively low " side will become the element in " higher " side.
Here, within " about ", " about ", the term of " on the whole " are generally represented in the 20% of a set-point or scope, preferably
Within being 10%, and within being more preferably 5%, or within 3%, or within 2%, or within 1%, or within 0.5%.Given at this
The quantity that is of about of quantity, that is in the case of there is no certain illustrated " about ", " about ", " on the whole ", still can imply " about ",
" about ", implication " on the whole ".
It is appreciated that, although term " first ", " second ", " the 3rd " etc. can be used to describe various element, group at this
Become composition, region, layer and/or part, these elements, constituent, region, layer and/or part should not limited by these terms
Determine, and these terms are intended merely to distinguish different element, constituent, region, layer and/or parts.Therefore, following discussion
One first element, constituent, region, layer and/or part can be referred to as one in the case of without departing from teachings of the present invention
Second element, constituent, region, layer and/or part.
Unless otherwise defined, whole term as used herein (including technology and scientific words) has affiliated with this invention
The identical connotation that is generally understood that of general technology person.It is appreciated that these terms, such as fixed in normally used dictionary
The term of justice, should be interpreted to have a meaning consistent with correlation technique and the background of the present invention or context, and should be with
One idealization or the most formal mode are understood, unless defined especially at this.
The embodiment of the present invention can coordinate accompanying drawing to understand in the lump, and the accompanying drawing of the present invention is also considered a part for invention description.
It is to be understood that the accompanying drawing of the present invention is not with actual device and the scale of element.May exaggerate embodiment in the accompanying drawings
Shape and thickness clearly to show inventive feature.Additionally, structure and device in accompanying drawing are painted in a schematic manner
Show, in order to clearly show inventive feature.
In the present invention, the term of relative property such as D score, " on ", " level ", " vertically ", " under ", " on ", " top
Portion ", " bottom " etc. should be understood orientation depicted in this section and relevant drawings.The term of this relative property merely to
Facilitating purposes of discussion, it does not represent its device described and need to manufacture with particular orientation or operate.And about engaging, connecting
Term such as " connect ", " interconnection " etc., unless defined, otherwise can refer to that two structures are directly contacts, or also can refer to
Two structures non-direct contact, wherein have other structure to be located between these two structures.And this is about the term engaged, connect
May also comprise two structures the most removable, or the situation that two structures are all fixed.
It should be noted that " substrate " word can include that on transparency carrier, established element and covering are at substrate below
On various film layers, can form any required transistor unit above it, but here for simplifying accompanying drawing, only with flat
Whole substrate represents it.Additionally, " substrate surface " is the film layer including the top and exposure on transparency carrier, such as one insulating barrier
And/or metal wire.
The embodiment of the present invention is the distance being shortened by between pixel electrode and common electrode, to increase pixel electrode together
With the electric capacity between electrode, and the display quality of thus lifting device.
Figure 1A～Figure 1B is the top view of the substrate 102 of the display device 100 of the embodiment of the present invention.Such as Figure 1A～Figure 1B institute
Showing, substrate 102 includes the scan line (gate line) 104 that A1 in the first direction extends, and with the data of this scan line 104 intersection
Line 106.In other words, this gate line 104 extends along direction A1, and on the whole vertical (perpendicular) or orthogonal
(orthogonal) direction of this scan line (gate line) bearing of trend A1 is direction A2.Additionally, substrate 102 also includes corresponding every
The thin film transistor (TFT) 110 that one pixel cell 108 (such as sub-pixel 108) is arranged.Additionally, pixel cell 108 also includes out
Mouth region 105 (corresponding follow-up non-shading region).
Above-mentioned data wire 106 by thin film transistor (TFT) 110 provide signal to sub-pixel 108, and this scan line (gate line)
104 provide scanning pulse signal to sub-pixel 108 by thin film transistor (TFT) 110, and coordinate above-mentioned signal together to control sub-pixel
108。
Above-mentioned thin film transistor (TFT) 110 includes drain electrode 112, source electrode 114, is located at drain electrode 112 and source electrode electricity
Channel region 116 between pole 114 and gate electrode 118.This gate electrode 118 self-scanning line 104 prolongs second direction A2 and extends
And go out, this drain electrode 112 is then the part of data wire 106.
Additionally, substrate 102 also includes a touching signals line 120, this touching signals line 120 on the whole with above-mentioned data wire 106
Overlap.
It is noted that for clearly describing the embodiment of the present invention, above-mentioned Figure 1A～Figure 1B does not illustrate follow-up pixel
Electrode and common electrode.
Fig. 2 A is the sectional view of the display device 100 of the embodiment of the present invention, and this figure is along such as the line segment of Figure 1A～Figure 1B
The sectional view that 2A-2A ' is drawn.Fig. 2 B is the sectional view drawn along the line segment 2B-2B ' of Figure 1A～Figure 1B.Such as Fig. 2 B institute
Showing, substrate 102 (or pixel cell 108) has a non-shading region 121A (open region 105 of corresponding Figure 1A) and shading region 121B,
Non-shading region refers to light shield layer and the non-shelter of metal.Additionally, as shown in Figure 2 A, substrate 102 can include a first substrate 122, this
First substrate 122 can include transparency carrier, for example, glass substrate, ceramic substrate, plastic substrate or other any applicable base
Plate.And thin film transistor (TFT) 110 includes the gate electrode 118 of being located on this first substrate 122, and be located at gate electrode 118 and
Gate dielectric 124 on first substrate 122.
This gate electrode 118 can be non-crystalline silicon, compound crystal silicon, one or more metal, metal nitride, conductive metal oxide
Thing or combinations of the above.Above-mentioned metal may include but be not limited to molybdenum (molybdenum), tungsten (tungsten), titanium
(titanium), tantalum (tantalum), platinum (platinum) or hafnium (hafnium).Above-mentioned metal nitride can include but not limit
In molybdenum nitride (molybdenum nitride), tungsten nitride (tungsten nitride), titanium nitride (titanium
And tantalum nitride (tantalum nitride) nitride).Above-mentioned conducting metal oxide may include but be not limited to ruthenium metal oxygen
Compound (ruthenium oxide) and indium tin metal oxide (indium tin oxide).This gate electrode 118 can pass through
Aforesaid chemical vapour deposition technique (CVD), sputtering method, resistive heating evaporation, e-beam evaporation or other is any applicable
Depositional mode is formed, and such as, in one embodiment, available Low Pressure Chemical Vapor Deposition (LPCVD) is between 525～650 DEG C
Depositing and prepare non-crystalline silicon conductive material layer or compound crystal silicon conductive material layer, its thickness range can be aboutTo about
This gate dielectric 124 can be silicon oxide, silicon nitride, silicon oxynitride, high-k (high-k) dielectric material,
Or other any applicable dielectric material or combinations of the above.The material of this high-k (high-k) dielectric material can be
Metal-oxide, metal nitride, metal silicide, transition metal oxide, transition metal nitride, transition metal silication
Thing, the nitrogen oxides of metal, metal aluminate, zirconium silicate, zircoaluminate.Such as, this high-k (high-k) dielectric
Material can be LaO, AlO, ZrO, TiO, Ta2O5、Y2O3、SrTiO3(STO)、BaTiO3(BTO)、BaZrO、HfO2、HfO3、
HfZrO、HfLaO、HfSiO、HfSiON、LaSiO、AlSiO、HfTaO、HfTiO、HfTaTiO、HfAlON、(Ba,Sr)TiO3
(BST)、Al2O3, other high-k dielectric materials of other suitable material or combinations thereof.This gate dielectric 124 can
Being formed by chemical vapour deposition technique (CVD) or method of spin coating, this chemical vapour deposition technique can be such as low pressure chemical phase
Sedimentation (low pressure chemical vapor deposition, LPCVD), low temperature chemical vapor deposition method (low
Temperature chemical vapor deposition, LTCVD), be rapidly heated chemical vapour deposition technique (rapid
Thermal chemical vapor deposition, RTCVD), plasma auxiliary chemical vapor deposition method (plasma
Enhanced chemical vapor deposition, PECVD), the atomic layer deposition method of atomic layer chemical vapor deposition method
(atomic layer deposition, ALD) or other conventional method.
Thin film transistor (TFT) 110 also includes the semiconductor layer 126 being located on gate dielectric 124, these semiconductor layer 126 and grid
Pole electrode 118 is overlapping, and above-mentioned drain electrode 112 is respectively arranged on the both sides of semiconductor layer 126, and difference with source electrode 114
With partly overlapping of semiconductor layer 126 both sides.
This semiconductor layer 126 can include elemental semiconductor, including silicon, germanium (germanium)；Compound semiconductor, including
Gallium nitride (gallium nitride, GaN), carborundum (silicon carbide), GaAs (gallium arsenide),
Gallium phosphide (gallium phosphide), indium phosphide (indium phosphide), indium arsenide (indium arsenide) and/
Or indium antimonide (indium antimonide)；Alloy semiconductor, including sige alloy (SiGe), phosphorus arsenic gallium alloy (GaAsP),
Arsenic aluminum indium alloy (AlInAs), arsenic aluminum gallium alloy (AlGaAs), arsenic indium gallium alloy (GaInAs), phosphorus indium gallium alloy (GaInP) and/
Or phosphorus arsenic indium gallium alloy (GaInAsP) or the combination of above-mentioned material.
The material of above-mentioned drain electrode 112 and source electrode 114 can include copper, aluminum, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium,
The metal material that iridium, rhodium, above-mentioned alloy, combinations of the above or other electric conductivity are good, such as, can be molybdenum aluminum molybdenum (Mo/Al/Mo)
Or the three-decker of titanium aluminum titanium (Ti/Al/Ti).In other embodiments, above-mentioned drain electrode 112 and the material of source electrode 114
Material can be nonmetallic materials, as long as the material used has electric conductivity.This drain electrode 112 and source electrode 114
Material can pass through aforesaid chemical vapour deposition technique (CVD), sputtering method, resistive heating evaporation, e-beam evaporation or other
Any applicable depositional mode is formed.In certain embodiments, above-mentioned drain electrode 112 can phase with the material of source electrode 114
With, and can by with along with deposition step formation.But, in other embodiments, above-mentioned drain electrode 112 and source electrode
114 also can be formed by different deposition steps, and its material can be different from each other.
With continued reference to Fig. 2 A, substrate 102 also includes the first insulation of cover film transistor 110 and gate dielectric 124
Layer 128.This first insulating barrier 128 can be silicon nitride, silicon dioxide or silicon oxynitride.First insulating barrier 128 can be by chemistry gas
Phase sedimentation (CVD) or method of spin coating are formed, and this chemical vapour deposition technique can be such as Low Pressure Chemical Vapor Deposition (low
Pressure chemical vapor deposition, LPCVD), low temperature chemical vapor deposition method (low temperature
Chemical vapor deposition, LTCVD), the chemical vapour deposition technique that is rapidly heated (rapid thermal
Chemical vapor deposition, RTCVD), plasma auxiliary chemical vapor deposition method (plasma enhanced
Chemical vapor deposition, PECVD), the atomic layer deposition method (atomic of atomic layer chemical vapor deposition method
Layer deposition, ALD) or other conventional method.
Then, on this first insulating barrier 128, alternative is provided with the second insulating barrier 130.The material of this second insulating barrier 130
Can be organic insulant (photosensitive resin) or inorganic insulant (silicon nitride, silicon oxide, silicon oxynitride, carborundum,
Aluminium oxide or the combination of above-mentioned material).Additionally, above-mentioned second insulating barrier 130 and the can be etched respectively by twice etching step
One insulating barrier 128, to form opening 132.This opening 132 is extended downward source electrode by the upper surface 130S of the second insulating barrier 130
Electrode 114, and expose the part surface 114S of source electrode 114.In other words, this opening 132 exposes transistor 110.
Then, above-mentioned touching signals line 120 is located on the second insulating barrier 130.The material of above-mentioned touching signals line 120 can wrap
Include the metal that copper, aluminum, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium, iridium, rhodium, above-mentioned alloy, combinations of the above or other electric conductivity are good
Material, such as, can be molybdenum aluminum molybdenum (Mo/Al/Mo) or the three-decker of titanium aluminum titanium (Ti/Al/Ti).In other embodiments, above-mentioned
The material of touching signals line 120 can be nonmetallic materials, as long as the material used has electric conductivity.This touching signals line
The material of 120 can pass through aforesaid chemical vapour deposition technique (CVD), sputtering method, resistive heating evaporation, e-beam evaporation,
Or other any applicable depositional mode is formed.
With continued reference to Fig. 2 A～Fig. 2 B, display device 100 also includes pixel electrode 134, and this pixel electrode 134 extends into out
In mouthfuls 132 and electrically connect transistor 110.Specifically, this pixel electrode 134 be located on the second insulating barrier 130 (or first insulation
On layer 128), on the sidewall of opening 132 and on the surface 114S of source electrode 114, and electrically connect source electrode 114.Additionally,
Display device 100 also includes the lining being located between touching signals line 420 and the second insulating barrier 130 (or first insulating barrier 128)
136.This lining 136 can be identical with the material of pixel electrode 134, and can by with along with deposition with photolithographic etching step formation.
This lining 136 can include transparent conductive material, for example, indium tin oxide (ITO), stannum oxide with the material of pixel electrode 134
(SnO), indium zinc oxide (IZO), indium gallium zinc (IGZO), indium tin zinc oxide (ITZO), antimony tin (ATO), stibium oxide zinc
(AZO), combinations of the above or other any applicable transparent conductive oxide material.
With continued reference to Fig. 2 A, display device 100 also includes being located at (or on first insulating barrier 128) on the second insulating barrier 130
And cover touching signals line 120 and the 3rd insulating barrier 138 of pixel electrode 134.And above-mentioned second insulating barrier 130 to be located at first exhausted
Between edge layer 128 and the 3rd insulating barrier 138.This 3rd insulating barrier 138 has opening 142, and this opening 142 is by the 3rd insulating barrier
The upper surface 138S of 138 extends downward the upper surface 120S of touching signals line 120.
Additionally, as shown in Figure 2 B, the 3rd insulating barrier 138 also has recess 140 in open region 105, and this recess 140 is the most right
Should non-shading region 121A.In certain embodiments, this recess 140 can be formed by using many greyscale photo masks.Specifically, many
Greyscale photo mask can be divided into interference-type photomask (Gray Tone Mask) and semi-modulation type photomask (half tone mask) two
Kind.Interference-type photomask is the slit producing below exposure machine resolution, then is covered the light of a part by this slit position
Source, to reach the effect of half-exposure.And semi-modulation type photomask is the film utilizing " translucent ", carry out half-exposure.More than because
Both of which is to present " exposed portion ", " half-exposure part " and " unexposed portion " after exposure process once
The exposure level of three kinds, therefore the photoresist (photosensitizer) of two kinds of thickness can be formed after development.By utilizing so
Photoresist difference in thickness, and coordinate subsequent etch processing technology, above-mentioned recess can be formed in the 3rd insulating barrier 138
140。
Additionally, in other embodiments, the 3rd insulating barrier 138 also can be by the different insulating barrier group of multilamellar and etching selectivity
Become, and by knowing that photolithographic etching step forms above-mentioned recess 140 for more than twice.
Display device 100 also includes the common electrode being located on the 3rd insulating barrier 138 and electrically connecting touching signals line 120
144.Specifically, common electrode 144 is located on the 3rd insulating barrier 138, and extends on the sidewall of opening 142 and touching signals
On the upper surface 120S of line 120, to electrically connect touching signals line 120.During additionally, this common electrode 144 is the most still as touch-control
Common electrode, be also the sensing electrode as display device.
Additionally, common electrode 144 is also located in above-mentioned recess 140.And as shown in Figure 2 B, the embodiment of the present invention will common electricity
Pole 144 is located in recess 140, can shorten the distance between pixel electrode 134 and common electrode 144, to increase pixel electrode 134
And the electric capacity between common electrode 144, and the display quality of thus lifting device.
Additionally, with continued reference to Fig. 2 B, be positioned at the 3rd insulating barrier in non-shading region 121A (open region 105 of corresponding Figure 1A)
138 have thickness T1 between common electrode 144 and pixel electrode 134, and the 3rd insulating barrier 138 being positioned in the 121B of shading region
There is thickness T2, and this thickness T1 is less than thickness T2.
As shown in Figure 2 B, the embodiment of the present invention, by making thickness T1 less than thickness T2, can shorten pixel electrode 134 with common
Distance between electrode 144, to increase the electric capacity between pixel electrode 134 and common electrode 144, and thus lifting device is aobvious
Show quality.
Additionally, in certain embodiments, the most directly contact at touching signals line 120 at common electrode 144, the 3rd insulating barrier
138 to have thickness T3, thickness T2 between common electrode 144 and touching signals line 120 equal with thickness T3.
The embodiment of the present invention by make above-mentioned thickness T2 equal to thickness T3, make touching signals line 120 and common electrode 144 it
Between keep a fixed range, therefore the coupling effect (coupling between touching signals line 120 and common electrode 144 can be reduced
Effect), thus can the display quality of further lifting device.
In certain embodiments, thickness T1 is aboutThickness T2 is aboutExtremelyAnd it is thick
Degree T3 is aboutExtremely
Additionally, with continued reference to Fig. 2 A～Fig. 2 B, display device 100 also includes the second substrate 146 that opposing substrate 102 is arranged
And the display medium 148 being located between substrate 102 and second substrate 146.
Above-mentioned display device 100 can be touch liquid crystal display, for example, Thin Film Transistor-LCD.Or, this
Liquid crystal display can be twisted nematic (Twisted Nematic, TN) type liquid crystal display, STN Super TN (Super
Twisted Nematic, STN) type liquid crystal display, double-layer ultra-torsion nematic (Double layer Super Twisted
Nematic, DSTN) type liquid crystal display, vertical orientation (Vertical Alignment, VA) type liquid crystal display, level electricity
Field effect (In-Plane Switching, IPS) type liquid crystal display, cholesterol (Cholesteric) type liquid crystal display, indigo plant
Phase (Blue Phase) type liquid crystal display, limit field effect (FFS) type liquid crystal display or other any applicable liquid crystal
Display.
In certain embodiments, second substrate 146 is colorized optical filtering laminar substrate.Specifically, as chromatic filter layer base
The second substrate 146 of plate can include a substrate 150, the light shield layer 152 being located on this substrate 150, be located at this light shield layer 152 and base
Chromatic filter layer 154 on plate 150 and cover the protective layer 156 of light shield layer 152 and chromatic filter layer 154.
Additionally, in certain embodiments, the region of the light shield layer 152 of the corresponding above-mentioned second substrate 146 of substrate 102 is screening
Light district 121B, and the non-shading region 121A of aforesaid substrate 102 refers to be provided with the secondary picture including transistor 110 in display device 100
The region of element 108 display.
Aforesaid substrate 150 can include transparency carrier, can be such as glass substrate, ceramic substrate, plastic substrate or other
The transparency carrier what is suitable for, above-mentioned light shield layer 152 can include black photoresist, black printed ink, black resin.On and
State chromatic filter layer 154 and can include red filter layer, green color filter, blue color filter layer or other any applicable colored filter
Photosphere.
Display device 100 can also include the sept 158 being located between substrate 102 and second substrate 146, this sept
158 is the primary structure in order to spacer substrate 102 with second substrate 146, substrate 102 during to prevent display device 100 to be pressed
Contact with second substrate 146.
Fig. 2 C is the sectional view of the display device 200 of another embodiment of the present invention.It should be noted that hereinafter with phase above
With or similar element or film layer will represent with same or analogous label, its material, manufacture method and function all with institute above
State same or similar, so part will not be described in great detail below.
With the difference of earlier figures 2A～the embodiment of Fig. 2 B, embodiment shown in Fig. 2 C is that substrate 102 also includes being located at out
The lining 160 on pixel electrode 134 in mouth 132.Additionally, above-mentioned 3rd insulating barrier 138 inserts opening 132, and lining 160
It is located between pixel electrode 134 and the 3rd insulating barrier 138.
The material of this lining 160 can include copper, aluminum, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium, iridium, rhodium, above-mentioned alloy, above-mentioned
Combination or the good metal material of other electric conductivity, can be such as molybdenum aluminum molybdenum (Mo/Al/Mo) or the three of titanium aluminum titanium (Ti/Al/Ti)
Rotating fields.In other embodiments, the material of above-mentioned lining 160 can be nonmetallic materials, as long as the material used has leads
Electrically.The material of this lining 160 can pass through aforesaid chemical vapour deposition technique (CVD), sputtering method, resistance heating evaporation
Method, e-beam evaporation or other any applicable depositional mode are formed.In certain embodiments, above-mentioned touching signals line 120
Can be identical with the material of lining 160, and can by with along with deposition step formation.But, in other embodiments, above-mentioned touch-control
Holding wire 120 also can be formed by different deposition steps from lining 160, and its material can be different from each other.
It should be noted that in addition to the embodiment shown in above-mentioned Figure 1A～Fig. 2 C, the common electrode of the embodiment of the present invention, as
Element electrode also can have other to configure, as shown in the embodiment of fig. 3 with touching signals line.The scope of the present invention not with Figure 1A～
Embodiment shown in Fig. 2 C is limited.This part will be in shown in detail below.
Display device 300A that Fig. 3 A is another embodiment of the present invention is drawn along the line segment 2A-2A ' of Figure 1A～Figure 1B
Sectional view.Display device 300A that Fig. 3 B is another embodiment of the present invention is drawn along the line segment 2B-2B ' of Figure 1A～Figure 1B
Sectional view.It should be noted that hereinafter will be with same or analogous label table with the most same or analogous element or film layer
Showing, its material, manufacture method and function are all same or similar with described previously, so part will not be described in great detail below.
As shown in Figure 3 B, substrate 102 has a non-shading region 121A and shading region 121B.Additionally, substrate 102 can include one
First substrate 122, this first substrate 122 can include transparency carrier, for example, glass substrate, ceramic substrate, plastic substrate or its
Its any applicable substrate.And as shown in Figure 3A, thin film transistor (TFT) 110 includes the gate electrode being located on this first substrate 122
118, and it is located at the gate dielectric 124 on gate electrode 118 and first substrate 122.
Thin film transistor (TFT) 110 also includes the semiconductor layer 126 being located on gate dielectric 124, these semiconductor layer 126 and grid
Pole electrode 118 is overlapping, and above-mentioned drain electrode 112 is respectively arranged on the both sides of semiconductor layer 126, and difference with source electrode 114
With partly overlapping of semiconductor layer 126 both sides.
The material of above-mentioned drain electrode 112 and source electrode 114 can include copper, aluminum, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium,
The metal material that iridium, rhodium, above-mentioned alloy, combinations of the above or other electric conductivity are good, such as, can be molybdenum aluminum molybdenum (Mo/Al/Mo)
Or the three-decker of titanium aluminum titanium (Ti/Al/Ti).In other embodiments, above-mentioned drain electrode 112 and the material of source electrode 114
Material can be nonmetallic materials, as long as the material used has electric conductivity.This drain electrode 112 and source electrode 114
Material can pass through aforesaid chemical vapour deposition technique (CVD), sputtering method, resistive heating evaporation, e-beam evaporation or other
Any applicable depositional mode is formed.In certain embodiments, above-mentioned drain electrode 112 can phase with the material of source electrode 114
With, and can by with along with deposition step formation.But, in other embodiments, above-mentioned drain electrode 112 and source electrode
114 also can be formed by different deposition steps, and its material can be different from each other.
With continued reference to Fig. 3 A, substrate 102 also includes the first insulation of cover film transistor 110 and gate dielectric 124
Layer 128.This first insulating barrier 128 can be silicon nitride, silicon dioxide or silicon oxynitride.First insulating barrier 128 can be by chemistry gas
Phase sedimentation (CVD) or method of spin coating are formed, and this chemical vapour deposition technique can be such as Low Pressure Chemical Vapor Deposition (low
Pressure chemical vapor deposition, LPCVD), low temperature chemical vapor deposition method (low temperature
Chemical vapor deposition, LTCVD), the chemical vapour deposition technique that is rapidly heated (rapid thermal
Chemical vapor deposition, RTCVD), plasma auxiliary chemical vapor deposition method (plasma enhanced
Chemical vapor deposition, PECVD), the atomic layer deposition method (atomic of atomic layer chemical vapor deposition method
Layer deposition, ALD) or other conventional method.
Then, on this first insulating barrier 128, alternative is provided with the second insulating barrier 130.The material of this second insulating barrier 130
Can be organic insulant (photosensitive resin) or inorganic insulant (silicon nitride, silicon oxide, silicon oxynitride, carborundum,
Aluminium oxide or the combination of above-mentioned material).
With continued reference to Fig. 3 A～Fig. 3 B, substrate 102 also includes being located on the second insulating barrier 130 (or the first insulating barrier 128
On) common electrode 144.This common electrode 144 can include transparent conductive material, for example, indium tin oxide (ITO), stannum oxide
(SnO), indium zinc oxide (IZO), indium gallium zinc (IGZO), indium tin zinc oxide (ITZO), antimony tin (ATO), stibium oxide zinc
(AZO), combinations of the above or other any applicable transparent conductive oxide material.Additionally, this common electrode 144 is the most still made
For common electrode during touch-control, being also the sensing electrode as display device, wherein, the type of drive of its touch-control can be self-capacitance
Type of drive (self-capacitive type).
With continued reference to Fig. 3 A～Fig. 3 B, display device 300A also includes being located on the second insulating barrier 130 (or the first insulating barrier
On 128) and the 3rd insulating barrier 138 of covering common electrode 144.This 3rd insulating barrier 138 can be silicon nitride, silicon dioxide or
Silicon oxynitride.And above-mentioned second insulating barrier 130 is located between the first insulating barrier 128 and the 3rd insulating barrier 138.This 3rd insulating barrier
138 have opening 162, and this opening 162 is extended downward common electrode 144 by the upper surface 138S of the 3rd insulating barrier 138.
Then, above-mentioned touching signals line 120 is located on the 3rd insulating barrier 138.This touching signals line 120 is by above-mentioned opening
162 electrical connection common electrodes 144.
The material of above-mentioned touching signals line 120 can include copper, aluminum, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium, iridium, rhodium, above-mentioned
The metal material that alloy, combinations of the above or other electric conductivity are good, such as, can be molybdenum aluminum molybdenum (Mo/Al/Mo) or titanium aluminum titanium (Ti/
Al/Ti) three-decker.In other embodiments, the material of above-mentioned touching signals line 120 can be nonmetallic materials, as long as
The material used has electric conductivity.The material of this touching signals line 120 can pass through aforesaid chemical vapour deposition technique
(CVD), sputtering method, resistive heating evaporation, e-beam evaporation or other any applicable depositional mode are formed.
With continued reference to Fig. 3 A～Fig. 3 B, display device 300A also includes being located on the 3rd insulating barrier 138 and covers touch-control letter
4th insulating barrier 164 of number line 120.This 4th insulating barrier 164 can be silicon nitride, silicon dioxide or silicon oxynitride.Additionally, such as
Shown in Fig. 3 A, substrate 102 also includes opening 166, this opening 166 extend through the 4th insulating barrier 164, the 3rd insulating barrier 138,
Two insulating barrier 130 and the first insulating barriers 128, and expose transistor 110, that is opening 166 exposes the part of source electrode 114
Surface 114S.
With continued reference to Fig. 3 A～Fig. 3 B, display device 300A also includes being located on the 4th insulating barrier 164 and electrical connection crystal
The pixel electrode 134 of pipe 110.The material of this pixel electrode 134 can include transparent conductive material, for example, indium tin oxide
(ITO), stannum oxide (SnO), indium zinc oxide (IZO), indium gallium zinc (IGZO), indium tin zinc oxide (ITZO), antimony tin
(ATO), stibium oxide zinc (AZO), combinations of the above or other any applicable transparent conductive oxide material.
As shown in Figure 3A, this pixel electrode 134 electrically connects transistor 110 by opening 166.Specifically, pixel electrode
134 are located on the 4th insulating barrier 164, and extend on the sidewall of opening 166 and on the surface 114S of source electrode 114, with electricity
Connect the source electrode 114 of transistor 110.
Additionally, as shown in Figure 3 B, the 4th insulating barrier 164 also has recess 140, and this recess 140 is generally corresponding to non-shading
District 121A (open region 105 of corresponding Figure 1A).And pixel electrode 134 is also located in above-mentioned recess 140.As shown in Figure 3A, this
Pixel electrode 134 is located in recess 140 by bright embodiment, can shorten the distance between common electrode 144 and pixel electrode 134,
To increase the electric capacity between common electrode 144 and pixel electrode 134, and the display quality of thus lifting device.
Additionally, with continued reference to Fig. 3 B, the distance between common electrode 144 and the pixel electrode 134 being located in recess 140 in
Non-shading region 121A is the first distance D1, and in the 121B of shading region, the upper surface 164S of the 4th insulating barrier 164 and common electricity
Distance between pole 144 is second distance D2, and this first distance D1 is less than second distance D2.
As shown in Figure 3 B, the embodiment of the present invention, by making the first distance D1 less than second distance D2, can shorten common electrode
Distance between 144 and pixel electrode 134, to increase the storage capacitors between common electrode 144 and pixel electrode 134 and electricity
, and the display quality of thus lifting device.
Additionally, in certain embodiments, as shown in Figure 3 B, recess 140 runs through the 4th insulating barrier 164, and is positioned at recess 140
In pixel electrode 134 directly contact the upper surface 138S of the 3rd insulating barrier 138.
Additionally, with continued reference to Fig. 3 A, display device 300A also include second substrate 146 that opposing substrate 102 arranges and
The display medium 148 being located between substrate 102 and second substrate 146.
Above-mentioned display device 300A can be touch liquid crystal display, for example, Thin Film Transistor-LCD.Or, this
Liquid crystal display can be twisted nematic (Twisted Nematic, TN) type liquid crystal display, STN Super TN (Super
Twisted Nematic, STN) type liquid crystal display, double-layer ultra-torsion nematic (Double layer Super Twisted
Nematic, DSTN) type liquid crystal display, vertical orientation (Vertical Alignment, VA) type liquid crystal display, level electricity
Field effect (In-Plane Switching, IPS) type liquid crystal display, cholesterol (Cholesteric) type liquid crystal display, indigo plant
Phase (Blue Phase) type liquid crystal display, limit field effect (FFS) type liquid crystal display or other any applicable liquid crystal
Display.
In certain embodiments, second substrate 146 is colorized optical filtering laminar substrate.Specifically, as chromatic filter layer base
The second substrate 146 of plate can include a substrate 150, the light shield layer 152 being located on this substrate 150, be located at this light shield layer 152 and base
Chromatic filter layer 154 on plate 150 and cover the protective layer 156 of light shield layer 152 and chromatic filter layer 154.
Additionally, the region of the light shield layer 152 of the corresponding above-mentioned second substrate 146 of substrate 102 is shading region 121B, and substrate
The non-shading region 121A of 102 refers to be provided with in display device 300A the region of sub-pixel 108 display including transistor 110.
Aforesaid substrate 150 can include transparency carrier, can be such as glass substrate, ceramic substrate, plastic substrate or other
The transparency carrier what is suitable for, above-mentioned light shield layer 152 can include black photoresist, black printed ink, black resin.On and
State chromatic filter layer 154 and can include red filter layer, green color filter, blue color filter layer or other any applicable colored filter
Photosphere.
Display device 300A can also include the sept 158 being located between substrate 102 and second substrate 146, this sept
158 is the primary structure in order to spacer substrate 102 with second substrate 146, substrate 102 during to prevent display device 300A to be pressed
Contact with second substrate 146.
Display device 300B that Fig. 3 C is another embodiment of the present invention is drawn along the line segment 2B-2B ' of Figure 1A～Figure 1B
Sectional view.It should be noted that hereinafter will be with same or analogous label table with the most same or analogous element or film layer
Showing, its material, manufacture method and function are all same or similar with described previously, so part will not be described in great detail below.
With the difference of the embodiment of earlier figures 3B, embodiment shown in Fig. 3 C is that the 3rd insulating barrier 138 also has recess
168, this recess 168 is generally corresponding to non-shading region 121A.Additionally, above-mentioned 4th insulating barrier 164 compliance is located at the 3rd insulating barrier
The recess 168 of 138 forms recess 140.
Additionally, as shown in Figure 3 C, it is positioned at the 3rd insulating barrier in non-shading region 121A (open region 105 of corresponding Figure 1A)
138 have thickness T4 between common electrode 144 and pixel electrode 134, and the 3rd insulating barrier 138 being positioned in the 121B of shading region
There is thickness T5, and this thickness T4 is less than thickness T5.In certain embodiments, thickness T4 isAnd thickness T5 is
2000 to
As shown in Figure 3 C, the embodiment of the present invention, by making thickness T4 less than thickness T5, can shorten common electrode 144 and pixel
Distance between electrode 134, to increase the electric capacity between common electrode 144 and pixel electrode 134, and thus lifting device is aobvious
Show quality.
In sum, the embodiment of the present invention is shortened by the distance between pixel electrode and common electrode, can increase pixel
Electric capacity between electrode and common electrode, and can the display quality of thus lifting device.Additionally, by making touching signals line together
With keeping a fixed range between electrode, the coupling effect (coupling between touching signals line and common electrode can be reduced
Effect), thus can the display quality of further lifting device.
It is moreover observed that, those skilled in the art scholar all knows very well, the drain electrode described in the embodiment of the present invention and source
The most interchangeable, the voltage level connected with itself because of its definition is relevant.
It should be noted that the most non-limit for the present invention of above-described component size, component parameters and component shape
Condition processed.This technical field has usually intellectual to need to adjust these setting values according to difference.It addition, the present invention
Touch control display apparatus and manufacture method thereof are not limited in the state illustrated in Figure 1A～Fig. 3 C.The present invention can only include Figure 1A
～any one or more of features of one or more embodiment any of Fig. 3 C.And the feature of not all diagram must be with in other words,
Time be implemented in touch control display apparatus and the manufacture method thereof of the present invention.
Although disclosing the present invention in conjunction with above example, it will be appreciated that any art has
Generally skill, without departing from the spirit and scope of the present invention, when changing, substitute and retouch.Additionally, the guarantor of the present invention
The scope of protecting is the processing technology in described specific embodiment, machine, manufacture, material composition, device, side in being not necessarily limited by description
Method and step, have usually intellectual and can understand existing or following institute from disclosure of the present invention in any art
Processing technology, machine, manufacture, material composition, device, method and the step developed, as long as can be in embodiment described herein
The more or less the same function of middle enforcement or obtain more or less the same result all can be used according to the invention.Therefore, protection scope of the present invention
Including above-mentioned processing technology, machine, manufacture, material composition, device, method and step.It addition, each claim constitutes indivedual
Embodiment, and protection scope of the present invention also includes the combination of each claim and embodiment.
Claims (11)
1. a touch control display apparatus, including:
First substrate, has at least one pixel cell, and this pixel cell comprises a non-shading region and a shading region and comprises:
Transistor, is located on this first substrate；
First insulating barrier, is located at this first substrate and is positioned on this transistor；
Touching signals line, is located on this first insulating barrier；
Second insulating barrier, is located on this first insulating barrier with on this touching signals line, and wherein this second insulating barrier has recess pair
Should non-shading region；And
First electrode, is located on this second insulating barrier and in this recess；
Second substrate, relatively this first substrate are arranged；And
Display medium, is located between this first substrate and this second substrate.
2. touch control display apparatus as claimed in claim 1, wherein this pixel cell also comprises:
Second electrode, is located between this first insulating barrier and this second insulating barrier, and this first insulating barrier has an opening and exposes this
Transistor, and this second electrode electrically connects this transistor by this opening,
Wherein this second insulating barrier has one first thickness in this non-shading region,
Wherein this second insulating barrier is positioned at this shading region and has one second thickness, and this first thickness is less than this second thickness.
3. touch control display apparatus as claimed in claim 2, wherein this second insulating barrier is in this first electrode and this touching signals
Having one the 3rd thickness between line, this second thickness is more than or equal to the 3rd thickness.
4. touch control display apparatus as claimed in claim 3, wherein this pixel cell also includes:
First lining, is located between this touching signals line and this first insulating barrier.
5. touch control display apparatus as claimed in claim 4, wherein this pixel cell also comprises:
Second lining, on this second electrode being located in this opening and this second lining be located at this second electrode with this second insulation
Between Ceng.
6. a touch control display apparatus, including:
First substrate, has at least one pixel cell, and this pixel cell comprises a non-shading region and a shading region and comprises:
Transistor, is located on this first substrate；
First insulating barrier, is located at this first substrate and is positioned on this transistor；
First electrode, is located on this first insulating barrier；
Second insulating barrier, be located on this first insulating barrier with on this first electrode；
Touching signals line, is located on this second insulating barrier；
3rd insulating barrier, is located on this second insulating barrier and covers this touching signals line, and wherein the 3rd insulating barrier has a pair
Should the first recess of non-shading region；And
Second electrode, is located on the 3rd insulating barrier and in this first recess；
Second substrate, relatively this first substrate are arranged；And
Display medium, is located between this first substrate and this second substrate.
7. touch control display apparatus as claimed in claim 6,
Wherein there is between this first electrode and this second electrode in this first recess one first distance,
Wherein in this shading region, between a upper surface and this first electrode of the 3rd insulating barrier, there is a second distance, and
This first distance is less than this second distance.
8. touch control display apparatus as claimed in claim 7, wherein this first recess runs through the 3rd insulating barrier, and be positioned at this
One upper surface of this this second insulating barrier of the second electrode contact in one recess.
9. touch control display apparatus as claimed in claim 6,
Wherein this second insulating barrier in this non-shading region has one first between this first electrode and this second electrode
Thickness,
This second insulating barrier being wherein positioned in this shading region has one second thickness, and this first thickness is less than this second thickness
Degree.
10. touch control display apparatus as claimed in claim 6, wherein this second insulating barrier has one and is positioned at the of this non-shading region
Two recesses, and this second recess is corresponding with this first recess.
11. touch control display apparatus as claimed in claim 6, wherein this second insulating barrier has the first opening, and this touch-control letter
Number line electrically connects this first electrode by this first opening.
Applications Claiming Priority (2)
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|---|---|---|---|
| US201562171592P | 2015-06-05 | 2015-06-05 | |
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| CN203433241U (en) * | 2013-07-16 | 2014-02-12 | 信利半导体有限公司 | Liquid crystal display panel and liquid crystal display device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106648241A (en) * | 2016-12-26 | 2017-05-10 | 南京中电熊猫液晶显示科技有限公司 | IGZO-based touch panel and manufacturing method thereof |
| CN110196521A (en) * | 2019-05-30 | 2019-09-03 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof, display device |
| US11755133B2 (en) | 2019-05-30 | 2023-09-12 | Ordos Yuansheng Optoelectronics Co., Ltd. | Array substrate and method for manufacturing same, and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106249934B (en) | 2019-06-11 |
| TWI591524B (en) | 2017-07-11 |
| TW201643639A (en) | 2016-12-16 |
| TWI581150B (en) | 2017-05-01 |
| CN106249493B (en) | 2019-10-11 |
| CN106249493A (en) | 2016-12-21 |
| TW201643644A (en) | 2016-12-16 |
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